TW202104485A - Composite sheet for forming protective film and method for manufacturing semiconductor chip having protective film including an antifouling sheet and a film for forming a protective film formed on one side of the antifouling sheet - Google Patents

Composite sheet for forming protective film and method for manufacturing semiconductor chip having protective film including an antifouling sheet and a film for forming a protective film formed on one side of the antifouling sheet Download PDF

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TW202104485A
TW202104485A TW109115276A TW109115276A TW202104485A TW 202104485 A TW202104485 A TW 202104485A TW 109115276 A TW109115276 A TW 109115276A TW 109115276 A TW109115276 A TW 109115276A TW 202104485 A TW202104485 A TW 202104485A
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protective film
forming
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aforementioned
composite sheet
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米山裕之
山本大輔
古野健太
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日商琳得科股份有限公司
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    • HELECTRICITY
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    • B32LAYERED PRODUCTS
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    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
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    • C09J7/25Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255Polyesters
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    • H01L21/67005Apparatus not specifically provided for elsewhere
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • C09J2423/00Presence of polyolefin
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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Abstract

A composite sheet for forming a protective film of the present embodiment includes an antifouling sheet and a film for forming a protective film formed on one side of the antifouling sheet, wherein the maximum value of the width of the composite sheet for forming a protective film is from 155mm to 194mm, from 205mm to 250mm, from 305mm to 350mm, or from 455mm to 500mm, and a test piece of the aforementioned antifouling sheet having a width of 15mm can be extended by 15% or more, and the tensile strength at 10% of elongation is 4.0N/15mm or more.

Description

保護膜形成用複合片、以及附保護膜之半導體晶片之製造方法Composite sheet for forming protective film, and manufacturing method of semiconductor wafer with protective film

本發明係關於一種保護膜形成用複合片、以及附保護膜之半導體晶片之製造方法。 本申請案基於2019年6月21日在日本提出申請之日本特願2019-115790號主張優先權,且引用該申請案的內容至本文中。The present invention relates to a composite sheet for forming a protective film and a method for manufacturing a semiconductor wafer with a protective film. This application claims priority based on Japanese Patent Application No. 2019-115790 filed in Japan on June 21, 2019, and the content of the application is cited herein.

於半導體裝置之製造過程中,有時利用保護膜來保護為了獲得目標物而需要加工之工件。 例如,於應用稱為倒裝(face down)方式之構裝方法而製造半導體裝置時,使用於電路形成面上具有凸塊等電極之半導體晶圓作為工件,為了抑制半導體晶圓或作為半導體晶圓之分割物之半導體晶片產生裂紋,有時利用保護膜來保護半導體晶圓或半導體晶片中之與電路形成面為相反側的內面。另外,於半導體裝置之製造過程中,使用半導體裝置面板作為工件,為了抑制該面板產生翹曲或裂紋,有時利用保護膜來保護面板的任意部位。此處,所謂半導體裝置面板,係指於半導體裝置之製造過程中進行操作之面板,作為該面板的具體例,可列舉:使用1個或2個以上之電子零件由密封樹脂密封之狀態的半導體裝置,使得多個這些半導體裝置呈平面狀地配置於圓形、矩形等形狀的區域內,相互電性連接而構成之面板。In the manufacturing process of a semiconductor device, a protective film is sometimes used to protect a workpiece that needs to be processed in order to obtain a target. For example, when a semiconductor device is manufactured using a packaging method called a face down method, a semiconductor wafer having electrodes such as bumps on the circuit formation surface is used as a workpiece, in order to suppress the semiconductor wafer or as a semiconductor wafer. The semiconductor wafer of the divided circle has cracks, and a protective film is sometimes used to protect the semiconductor wafer or the inner surface of the semiconductor wafer on the opposite side to the circuit formation surface. In addition, in the manufacturing process of the semiconductor device, the semiconductor device panel is used as a workpiece, and in order to prevent the panel from warping or cracking, a protective film is sometimes used to protect any part of the panel. Here, the "semiconductor device panel" refers to a panel that is operated during the manufacturing process of the semiconductor device. As a specific example of the panel, a semiconductor device in a state where one or more electronic components are sealed by a sealing resin can be cited. The device is such that a plurality of these semiconductor devices are arranged in a circular, rectangular, or other shape in a planar shape, and are electrically connected to each other to form a panel.

為了形成此種保護膜,例如使用具備支撐片、進而於前述支撐片的一面上具備用以形成保護膜之保護膜形成用膜而構成之保護膜形成用複合片。 保護膜形成用膜可藉由硬化發揮作為保護膜之功能,亦可以未硬化之狀態發揮作為保護膜之功能。另外,支撐片能夠用以將具備保護膜形成用膜或保護膜之工件予以固定。例如,於使用半導體晶圓作為工件之情形時,支撐片能夠用作將半導體晶圓分割為半導體晶片時所需之切割片。作為支撐片,例如可列舉:具備基材、及設置於前述基材的一面上之黏著劑層之支撐片;僅由基材所構成之支撐片等。於支撐片具備黏著劑層之情形時,黏著劑層於保護膜形成用複合片中係配置於基材與保護膜形成用膜之間。In order to form such a protective film, for example, a composite sheet for protective film formation is used which includes a support sheet and further includes a protective film formation film for forming a protective film on one side of the support sheet. The film for forming a protective film may function as a protective film by curing, or may function as a protective film in an uncured state. In addition, the support sheet can be used to fix a workpiece provided with a protective film forming film or a protective film. For example, when a semiconductor wafer is used as a workpiece, the support sheet can be used as a dicing sheet required for dividing the semiconductor wafer into semiconductor wafers. As the support sheet, for example, a support sheet provided with a base material and an adhesive layer provided on one surface of the aforementioned base material; a support sheet composed of only the base material, and the like. When the support sheet is provided with an adhesive layer, the adhesive layer is arranged between the base material and the protective film formation film in the composite sheet for protective film formation.

於使用上述之保護膜形成用複合片之情形時,首先,於工件的目標部位貼附保護膜形成用複合片中的保護膜形成用膜。繼而,對具備此種保護膜形成用複合片之狀態的工件進行加工,藉此獲得工件加工物。 例如,於工件為半導體晶圓之情形時,於半導體晶圓的前述內面貼附保護膜形成用複合片中的保護膜形成用膜。 繼而,例如將半導體晶圓分割為半導體晶片,切斷保護膜形成用膜或保護膜,將內面具備切斷後的保護膜形成用膜或保護膜之半導體晶片自支撐片扯離而進行拾取。將半導體晶圓分割為半導體晶片及切斷保護膜形成用膜或保護膜之順序可根據目的先進行任一者,亦可為同時。於保護膜形成用膜為硬化性之情形時,保護膜形成用膜之硬化(亦即,保護膜之形成)於任意時機進行即可。 藉由以上步驟,獲得於半導體晶片的內面設置保護膜而構成之附保護膜之半導體晶片作為工件加工物。In the case of using the above-mentioned composite sheet for forming a protective film, first, the film for forming a protective film in the composite sheet for forming a protective film is attached to the target portion of the work. Then, the workpiece in the state provided with such a composite sheet for forming a protective film is processed to obtain a workpiece processed product. For example, when the work is a semiconductor wafer, the protective film formation film in the protective film formation composite sheet is attached to the aforementioned inner surface of the semiconductor wafer. Then, for example, the semiconductor wafer is divided into semiconductor wafers, the protective film formation film or protective film is cut, and the semiconductor wafer provided with the cut protective film formation film or protective film on the inner surface is separated from the support sheet and picked up. The order of dividing the semiconductor wafer into semiconductor wafers and cutting the protective film forming film or the protective film may be performed first according to the purpose, or may be performed at the same time. When the protective film formation film is curable, the curing of the protective film formation film (that is, the formation of the protective film) may be performed at any timing. Through the above steps, a semiconductor wafer with a protective film formed by providing a protective film on the inner surface of the semiconductor wafer is obtained as a workpiece to be processed.

作為此種保護膜形成用複合片,例如揭示有以下之半導體裝置用膜:具備基材、黏著劑層及覆晶型半導體內面用膜(相當於前述保護膜形成用膜),且能夠抑制於捲取成輥狀時產生捲繞痕跡(亦稱為「捲痕」)(參照專利文獻1)。As such a composite sheet for forming a protective film, for example, a film for a semiconductor device is disclosed that includes a substrate, an adhesive layer, and a film for the inner surface of a flip chip semiconductor (corresponding to the aforementioned film for forming a protective film), and can suppress Winding traces (also referred to as "rolling traces") are generated when being wound into a roll (refer to Patent Document 1).

前文中對使用具備支撐片及保護膜形成用膜之保護膜形成用複合片之情形進行了說明,但亦可使用未構成保護膜形成用複合片之保護膜形成用膜。 該情形時,例如於工件為半導體晶圓之情形時,只要藉由於半導體晶圓的內面貼附未與支撐片形成為一體之保護膜形成用膜,視需要使保護膜形成用膜硬化,而形成保護膜即可。 [先前技術文獻] [專利文獻]In the foregoing, the case of using the protective film forming composite sheet provided with the support sheet and the protective film forming film has been described, but the protective film forming film that does not constitute the protective film forming composite sheet may also be used. In this case, for example, when the work is a semiconductor wafer, it is only necessary to harden the protective film formation film if necessary by attaching a protective film forming film that is not integrated with the support sheet due to the inner surface of the semiconductor wafer. It is sufficient to form a protective film. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2016-213236號公報。[Patent Document 1] Japanese Patent Application Laid-Open No. 2016-213236.

[發明所欲解決之課題][The problem to be solved by the invention]

於分割半導體晶圓時,必須將具備保護膜形成用複合片之狀態的半導體晶圓於分割裝置中予以固定。例如,於使用切割刀片分割(切割)半導體晶圓之情形時,於切割裝置中藉由環狀框等治具將半導體晶圓連同保護膜形成用複合片一起予以固定。When dividing a semiconductor wafer, it is necessary to fix the semiconductor wafer in a state with a composite sheet for forming a protective film in a dividing device. For example, when a dicing blade is used to divide (cut) a semiconductor wafer, the semiconductor wafer and the protective film forming composite sheet are fixed by a jig such as a ring frame in the dicing device.

另一方面,有時藉由對貼附於半導體晶圓的內面之保護膜形成用膜照射雷射光而實施印字(本說明書中,有時簡稱為「雷射印字」)。該情形時,在分割半導體晶圓之前,必須將內面具備保護膜形成用複合片或未與支撐片形成為一體之保護膜形成用膜而成之半導體晶圓設置於用以進行雷射印字之裝置(本說明書中,有時簡稱為「雷射印字裝置」)中。On the other hand, printing is sometimes performed by irradiating a film for forming a protective film attached to the inner surface of a semiconductor wafer with laser light (in this specification, sometimes referred to as "laser printing"). In this case, before dividing the semiconductor wafer, a semiconductor wafer with a composite sheet for forming a protective film or a film for forming a protective film that is not integrated with the support sheet must be placed on the semiconductor wafer for laser printing. The device (in this manual, sometimes referred to as "laser printing device").

但是,內面具備通常的保護膜形成用複合片之半導體晶圓由於保護膜形成用複合片、尤其是該複合片中的支撐片過大,故而無法設置於通常的雷射印字裝置中。 另外,於將內面具備未與支撐片形成為一體之保護膜形成用膜而成之半導體晶圓予以操作之情形時,若保護膜形成用膜中之與半導體晶圓側為相反側的面露出,則不預期的異物會附著於該露出面而產生不良情況。原因在於,保護膜形成用膜相對較柔軟,且具有適度的黏著性。However, a semiconductor wafer provided with a general composite sheet for forming a protective film on the inner surface cannot be installed in a general laser printing device because the composite sheet for forming a protective film, particularly the support sheet in the composite sheet, is too large. In addition, when handling a semiconductor wafer with a protective film forming film that is not integrated with the support sheet on the inner surface, if the protective film forming film is on the opposite side to the semiconductor wafer side If it is exposed, unexpected foreign matter will adhere to the exposed surface and cause problems. The reason is that the film for forming a protective film is relatively soft and has moderate adhesiveness.

此處對使用內面具備保護膜形成用膜之半導體晶圓對保護膜形成用膜進行雷射印字之情形進行了說明,但將具備保護膜形成用膜之半導體晶圓予以操作之步驟並不限定於進行雷射印字之步驟。作為此種步驟,例如亦存在將具備保護膜形成用膜之半導體晶圓搬送至目標場所之步驟等其他步驟,具有與進行雷射印字之步驟之情形同樣的問題。This section describes the laser printing of the protective film forming film on the semiconductor wafer with the protective film forming film on the inner surface. However, the procedure for handling the semiconductor wafer with the protective film forming film is not Limited to the steps of laser printing. As such a step, for example, there are other steps such as the step of transporting the semiconductor wafer provided with the protective film forming film to the target location, and the same problem as the case of the laser printing step is performed.

並且,專利文獻1中所揭示之半導體裝置用膜(相當於前述保護膜形成用膜)並不能解決這些問題。Moreover, the film for a semiconductor device (corresponding to the film for forming a protective film described above) disclosed in Patent Document 1 cannot solve these problems.

本發明的目的在於提供一種保護膜形成用複合片,具備有用以於半導體晶圓的內面形成保護膜之保護膜形成用膜,且於半導體晶圓之分割前,將內面具備保護膜形成用膜之半導體晶圓予以操作時,能夠抑制不預期的異物附著於保護膜形成用膜,並且具有適於此目的之特性。 [用以解決課題之手段]The object of the present invention is to provide a composite sheet for forming a protective film, including a protective film forming film for forming a protective film on the inner surface of a semiconductor wafer, and forming a protective film on the inner surface before dividing the semiconductor wafer When handling with a filmed semiconductor wafer, it is possible to prevent unintended foreign matter from adhering to the protective film forming film, and has characteristics suitable for this purpose. [Means to solve the problem]

本發明提供一種保護膜形成用複合片,係用以貼附於半導體晶圓的內面而於前述內面形成保護膜;前述保護膜形成用複合片具備防污片、及形成於前述防污片的一面上之保護膜形成用膜;前述保護膜形成用膜能夠形成前述保護膜;前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm;製作寬度為15mm之前述防污片之試片,進行以下之拉伸試驗,亦即於18℃至28℃之溫度條件下,將初始的夾頭間隔設為100mm,將前述試片於相對於前述試片的表面呈平行的方向上以200mm/min之速度拉伸時,前述試片能夠伸長15%以上,且前述試片伸長10%時的拉伸強度為4.0N/15mm以上。 本發明的保護膜形成用複合片中,前述防污片可為用以於使用前述保護膜形成用複合片時,防止不預期的異物附著於貼附於前述半導體晶圓的內面之前述保護膜形成用膜之片。 本發明的保護膜形成用複合片中,前述防污片的透過清晰度可為100以上。The present invention provides a composite sheet for forming a protective film, which is used to be attached to the inner surface of a semiconductor wafer to form a protective film on the inner surface; the composite sheet for forming a protective film includes an anti-fouling sheet and formed on the anti-fouling A film for forming a protective film on one side of a sheet; the film for forming the protective film can form the protective film; the composite sheet for forming a protective film relative to the attachment of the semiconductor wafer to the composite sheet for forming a protective film The maximum width in the direction parallel to the surface is 155mm to 194mm, 205mm to 250mm, 305mm to 350mm, or 455mm to 500mm; the test piece of the aforementioned antifouling sheet with a width of 15mm is made, and the following tensile test is performed. That is, under the temperature condition of 18°C to 28°C, the initial chuck spacing is set to 100mm, and the test piece is stretched at a speed of 200mm/min in a direction parallel to the surface of the test piece. The test piece can be extended by 15% or more, and the tensile strength of the aforementioned test piece when it is extended by 10% is 4.0N/15mm or more. In the composite sheet for forming a protective film of the present invention, the antifouling sheet may be the aforementioned protection for preventing unexpected foreign matter from adhering to the inner surface of the semiconductor wafer when the composite sheet for forming a protective film is used. Film sheet for film formation. In the composite sheet for forming a protective film of the present invention, the antifouling sheet may have a transparency of 100 or more.

另外,本發明提供一種附保護膜之半導體晶片之製造方法,係製造具備半導體晶片、及設置於前述半導體晶片的內面之保護膜之附保護膜之半導體晶片;前述保護膜係由前述保護膜形成用複合片中的保護膜形成用膜所形成;於前述保護膜形成用膜為硬化性之情形時,前述保護膜形成用膜之硬化物為保護膜,於前述保護膜形成用膜為非硬化性之情形時,貼附於分割為前述半導體晶片之前的半導體晶圓的內面之後的前述保護膜形成用膜為保護膜;前述附保護膜之半導體晶片之製造方法具有:第1貼附步驟,係一邊將前述保護膜形成用複合片於相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上拉伸,一邊將前述保護膜形成用複合片中的保護膜形成用膜貼附於大小小於前述保護膜形成用膜之前述半導體晶圓的內面整面,藉此製作於前述半導體晶圓的內面設置有前述保護膜形成用複合片之第1積層體;第1切斷步驟,係將前述第1積層體中的前述保護膜形成用複合片沿著前述半導體晶圓的外周切斷,藉此製作於前述半導體晶圓的內面設置有切斷後的前述保護膜形成用複合片之第2積層體;操作步驟,係將前述第2積層體予以操作;第2貼附步驟,係於前述操作步驟之後,於操作後的前述第2積層體中的防污片中之與前述保護膜形成用膜或保護膜之側為相反側的面貼附黏著片;分割步驟,係於前述第2貼附步驟之後,分割前述半導體晶圓,藉此製作半導體晶片;第2切斷步驟,係於前述第2貼附步驟之後,切斷前述保護膜形成用膜或保護膜;以及拾取步驟,係將具備前述切斷後的保護膜形成用膜或保護膜之前述半導體晶片自包含前述防污片及黏著片之積層片扯離而進行拾取;於前述第1貼附步驟中,係使前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值,相對於前述半導體晶圓之相對於前述半導體晶圓中之與前述保護膜形成用複合片之貼附面呈平行的方向上的寬度的最大值成為101.1%至129.3%;於前述保護膜形成用膜為硬化性之情形時,進而具有硬化步驟,係於前述操作步驟之後,使前述保護膜形成用膜硬化,藉此形成保護膜。 本發明的附保護膜之半導體晶片之製造方法中,前述操作步驟可為藉由對前述第2積層體中的保護膜形成用膜照射雷射光而進行印字之印字步驟。 [發明功效]In addition, the present invention provides a method for manufacturing a semiconductor chip with a protective film, which is to manufacture a semiconductor chip with a protective film and a protective film provided on the inner surface of the semiconductor chip; the protective film is made of the protective film The protective film formation film in the formation composite sheet is formed; when the protective film formation film is curable, the cured product of the protective film formation film is a protective film, and the protective film formation film is not In the case of curability, the film for forming the protective film after being attached to the inner surface of the semiconductor wafer before being divided into the semiconductor wafer is a protective film; the manufacturing method of the semiconductor chip with the protective film includes: first attaching The step is to stretch the composite sheet for forming a protective film in a direction parallel to the attaching surface to the semiconductor wafer in the composite sheet for forming a protective film while stretching the composite sheet for forming a protective film The protective film forming film in is attached to the entire inner surface of the semiconductor wafer that is smaller in size than the protective film forming film, thereby fabricating a composite sheet provided with the protective film forming composite sheet on the inner surface of the semiconductor wafer The first layered body; the first cutting step is to cut the composite sheet for forming the protective film in the first layered body along the outer periphery of the semiconductor wafer, thereby manufacturing it on the inner surface of the semiconductor wafer There is the second laminated body of the composite sheet for forming the protective film after cutting; the operation step is to operate the second laminated body; the second attaching step is after the operation step and the second layer after the operation The adhesive sheet is attached to the side of the antifouling sheet in the laminate on the side opposite to the side of the protective film forming film or the protective film; the dividing step is after the second attaching step, dividing the semiconductor wafer, Thus, a semiconductor wafer is produced; the second cutting step is to cut the protective film forming film or protective film after the second attaching step; and the pickup step is to provide the cut protective film forming film Or the semiconductor chip of the protective film is pulled away from the laminated sheet including the antifouling sheet and the adhesive sheet and picked up; in the first attaching step, the composite sheet for forming the protective film is formed relative to the protective film The maximum width of the composite sheet in the direction parallel to the attachment surface of the semiconductor wafer is relative to the semiconductor wafer relative to the attachment of the composite sheet for forming the protective film in the semiconductor wafer The maximum width of the attached surface in the parallel direction becomes 101.1% to 129.3%; when the film for forming a protective film is curable, there is a curing step, which is followed by the above-mentioned operation step to form the protective film The film is hardened, thereby forming a protective film. In the method for manufacturing a semiconductor wafer with a protective film of the present invention, the operation step may be a printing step of printing by irradiating the film for forming a protective film in the second layered body with laser light. [Efficacy of invention]

根據本發明,提供一種保護膜形成用複合片,係於半導體晶圓的內面具備用以形成保護膜之保護膜形成用膜,且於半導體晶圓之分割前,將內面具備保護膜形成用膜之半導體晶圓予以操作時,能夠抑制不預期的異物附著於保護膜形成用膜,並且具有適於此目的之特性。According to the present invention, there is provided a composite sheet for forming a protective film, which is provided with a protective film forming film for forming a protective film on the inner surface of a semiconductor wafer, and before dividing the semiconductor wafer, the inner surface is formed with a protective film When handling with a filmed semiconductor wafer, it is possible to prevent unintended foreign matter from adhering to the protective film forming film, and has characteristics suitable for this purpose.

◇保護膜形成用複合片 本發明的一實施形態的保護膜形成用複合片係用以貼附於半導體晶圓的內面而於前述內面形成保護膜;前述保護膜形成用複合片具備防污片、及形成於前述防污片的一面上之保護膜形成用膜;前述保護膜形成用膜能夠形成前述保護膜;前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm;製作寬度為15mm之前述防污片之試片,進行以下之拉伸試驗,亦即於18℃至28℃之溫度條件下,將初始的夾頭間隔設為100mm,將前述試片於相對於前述試片的表面呈平行的方向上以200mm/min之速度拉伸時,前述試片能夠伸長15%以上(本說明書中,有時將此種特性稱為「15%伸長性」),且前述試片伸長10%時的拉伸強度(本說明書中,有時簡稱為「10%伸長時的拉伸強度」)為4.0N/15mm以上。◇Composite sheet for forming protective film The composite sheet for forming a protective film according to an embodiment of the present invention is used for attaching to the inner surface of a semiconductor wafer to form a protective film on the inner surface; the composite sheet for forming a protective film includes an antifouling sheet and is formed on the inner surface of the semiconductor wafer. The film for forming a protective film on one side of the antifouling sheet; the film for forming the protective film can form the protective film; the composite sheet for forming the protective film is relative to the semiconductor wafer in the composite sheet for forming the protective film The maximum width of the attachment surface in the parallel direction is 155mm to 194mm, 205mm to 250mm, 305mm to 350mm, or 455mm to 500mm; a test piece of the aforementioned antifouling sheet with a width of 15mm is made, and the following tensile test is performed , That is, under the temperature condition of 18°C to 28°C, the initial chuck spacing is set to 100mm, and the test piece is stretched at a speed of 200mm/min in a direction parallel to the surface of the test piece , The aforementioned test piece can be extended by 15% or more (in this specification, this characteristic is sometimes referred to as "15% extensibility"), and the tensile strength when the aforementioned test piece is extended by 10% (in this specification, sometimes referred to as "Tensile strength at 10% elongation") 4.0N/15mm or more.

本實施形態的保護膜形成用複合片中的前述保護膜形成用膜不硬化或硬化成硬化物,藉此能夠形成用以保護半導體晶圓的內面之保護膜。另外,前述防污片係於保護膜形成用複合片之操作時(使用時),抑制不預期的異物附著於前述保護膜形成用膜。The protective film formation film in the composite sheet for protective film formation of the present embodiment is not cured or hardened into a cured product, whereby a protective film for protecting the inner surface of the semiconductor wafer can be formed. In addition, the antifouling sheet is used at the time of handling (at the time of use) of the composite sheet for forming a protective film, and prevents unexpected foreign matter from adhering to the film for forming a protective film.

本實施形態的保護膜形成用複合片藉由相對於該保護膜形成用複合片中之對半導體晶圓之貼附面呈平行的方向上的寬度的最大值如上所述為特定範圍內,而適於在半導體晶圓之分割前,將內面具備保護膜形成用膜之半導體晶圓予以操作時使用。例如,於將具備保護膜形成用膜之半導體晶圓於任意裝置中予以操作(若列舉一例,則於後述之雷射印字裝置中對保護膜形成用膜進行雷射印字)時,即便該裝置未與用以固定半導體晶圓之環狀框等治具之使用對應之情形時,本實施形態的保護膜形成用複合片亦能夠於此種裝置中無問題地予以操作。 此外,本說明書中,只要無特別說明,則所謂「保護膜形成用複合片的寬度」,意指上述之「保護膜形成用複合片之相對於保護膜形成用複合片中之對半導體晶圓之貼附面呈平行的方向上的寬度」。The composite sheet for forming a protective film of the present embodiment has the maximum width in a direction parallel to the attaching surface to the semiconductor wafer in the composite sheet for forming a protective film within a specific range as described above, and It is suitable for handling a semiconductor wafer with a protective film forming film on the inner surface before the semiconductor wafer is divided. For example, when a semiconductor wafer equipped with a protective film forming film is handled in an arbitrary device (if one example is given, the protective film forming film is laser-printed in a laser printing device described later), even if the device When it does not correspond to the use of a jig such as a ring frame for fixing a semiconductor wafer, the composite sheet for forming a protective film of the present embodiment can also be handled without any problem in such an apparatus. In addition, in this specification, unless otherwise specified, the "width of the protective film forming composite sheet" means the aforementioned "protective film forming composite sheet relative to the semiconductor wafer in the protective film forming composite sheet" The attachment surface has a width in a parallel direction".

本實施形態的保護膜形成用複合片中的前述防污片具有良好的切斷適性。原因在於,防污片之前述試片於進行前述拉伸試驗時,具有如上述之10%伸長時的拉伸強度。另外,如後所述,一邊將保護膜形成用複合片於相對於該保護膜形成用複合片中之對半導體晶圓之貼附面呈平行的方向上拉伸,一邊將保護膜形成用複合片中的保護膜形成用膜貼附於半導體晶圓的內面整面時,前述防污片不會被切斷,亦不會產生褶皺,而具有良好的貼附適性。原因在於,防污片之前述試片於進行前述拉伸試驗時,具有如上述之15%伸長性。因此,保護膜形成用複合片的切斷適性及貼附適性亦良好,能夠根據作為保護膜形成用複合片之貼附對象之半導體晶圓的大小,藉由切斷良好地調節保護膜形成用複合片的大小。亦即,本實施形態的保護膜形成用複合片具有適於保護膜形成用膜之防污目的之特性。The aforementioned antifouling sheet in the composite sheet for forming a protective film of the present embodiment has good cutting suitability. The reason is that the aforementioned test piece of the antifouling sheet has the aforementioned tensile strength at 10% elongation when subjected to the aforementioned tensile test. In addition, as described later, the composite sheet for forming a protective film is stretched in a direction parallel to the attaching surface to the semiconductor wafer in the composite sheet for forming a protective film while the composite sheet for forming a protective film is stretched. When the protective film forming film in the sheet is attached to the entire inner surface of the semiconductor wafer, the antifouling sheet will not be cut or wrinkles will be generated, and it will have good attachment adaptability. The reason is that the aforementioned test piece of the antifouling sheet has the above-mentioned 15% elongation when subjected to the aforementioned tensile test. Therefore, the cutting suitability and adhesion suitability of the protective film forming composite sheet are also good, and the protective film forming can be adjusted well by cutting according to the size of the semiconductor wafer to be attached to the protective film forming composite sheet. The size of the composite sheet. That is, the composite sheet for forming a protective film of this embodiment has characteristics suitable for the antifouling purpose of the film for forming a protective film.

[保護膜形成用複合片的寬度的最大值] 自前述保護膜形成用複合片中之對半導體晶圓之貼附面之側往下看而俯視前述保護膜形成用複合片時的形狀、亦即保護膜形成用複合片的平面形狀並無特別限定,可根據半導體晶圓中之與保護膜形成用複合片之貼附面的平面形狀而適宜調節。例如,針對平面形狀為圓形狀之半導體晶圓,可使用平面形狀為圓形狀之保護膜形成用複合片。該情形時,上述之保護膜形成用複合片的寬度的最大值成為作為前述平面形狀之圓的直徑。[Maximum width of composite sheet for protective film formation] The shape of the composite sheet for forming a protective film, that is, the planar shape of the composite sheet for forming a protective film, when viewed from the side of the attaching surface to the semiconductor wafer in the foregoing composite sheet for forming a protective film, is not particularly The limitation can be appropriately adjusted according to the planar shape of the attachment surface of the composite sheet for forming the protective film in the semiconductor wafer. For example, for a semiconductor wafer having a circular planar shape, a composite sheet for forming a protective film having a circular planar shape can be used. In this case, the maximum value of the width of the above-mentioned composite sheet for forming a protective film becomes the diameter of the circle as the above-mentioned planar shape.

保護膜形成用複合片的寬度的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm。這些4個數值範圍係與半導體晶圓對應。半導體晶圓相對於與保護膜形成用複合片之貼附面呈平行的方向上的寬度的最大值為150mm、200mm、300mm或450mm。此種保護膜形成用複合片的尺寸可謂為晶圓尺寸。這些半導體晶圓的前述寬度的最大值中「450mm」以外的值係基於「矽鏡面晶圓的尺寸規格相關的標準規格(Standard specification for dimensional properties of silicon wafers with specular surfaces);制定者:矽技術委員會(Silicon Technologies Committee)、資訊處理標準化營運委員會(Managing Committee on Information Technology Standardization);發行:社團法人電子資訊技術產業協會(Japan Electronic and Information Technology Industries Association)」所謂之「JEITA EM-3602」(2002年7月發行)中所規定之「矽鏡面晶圓」的「直徑」150mm、200mm及300mm。例如,於該領域中,150mm、200mm、300mm或450mm之直徑習慣上稱為6吋、8吋、12吋或18吋。此外,本說明書中,只要無特別說明,則所謂「半導體晶圓的寬度」,意指上述之「半導體晶圓之相對於該半導體晶圓中之與保護膜形成用複合片之貼附面呈平行的方向上的寬度」。例如,於平面形狀為圓形狀之半導體晶圓之情形時,上述之半導體晶圓的寬度的最大值成為作為前述平面形狀之圓的直徑。The maximum value of the width of the composite sheet for protective film formation is 155 mm to 194 mm, 205 mm to 250 mm, 305 mm to 350 mm, or 455 mm to 500 mm. These four numerical ranges correspond to semiconductor wafers. The maximum value of the width of the semiconductor wafer in a direction parallel to the attachment surface of the protective film forming composite sheet is 150 mm, 200 mm, 300 mm, or 450 mm. The size of such a composite sheet for forming a protective film can be referred to as a wafer size. Among the aforementioned maximum widths of these semiconductor wafers, values other than "450mm" are based on the "Standard specification for dimensional properties of silicon wafers with specular surfaces); Author: Silicon Technology Committee (Silicon Technologies Committee), Management Committee on Information Technology Standardization (Managing Committee on Information Technology Standardization); Issued by: Japan Electronic and Information Technology Industries Association" so-called "JEITA EM-3602" (2002 (Issued in July 2007) the "diameter" of the "silicon mirror wafer" specified in 150mm, 200mm and 300mm. For example, in this field, diameters of 150mm, 200mm, 300mm, or 450mm are customarily referred to as 6 inches, 8 inches, 12 inches, or 18 inches. In addition, in this specification, unless otherwise specified, the "width of the semiconductor wafer" means the aforementioned "semiconductor wafer with respect to the surface of the semiconductor wafer that is attached to the protective film forming composite sheet. The width in the parallel direction". For example, in the case of a semiconductor wafer whose planar shape is a circular shape, the maximum width of the aforementioned semiconductor wafer becomes the diameter of the circle of the aforementioned planar shape.

155mm至194mm之保護膜形成用複合片的寬度的最大值相對於150mm之半導體晶圓的寬度的最大值為103.3%至129.3%。 205mm至250mm之保護膜形成用複合片的寬度的最大值相對於200mm之半導體晶圓的寬度的最大值為102.5%至125%。 305mm至350mm之保護膜形成用複合片的寬度的最大值相對於300mm之半導體晶圓的寬度的最大值為101.7%至116.7%。 455mm至500mm之保護膜形成用複合片的寬度的最大值相對於450mm之半導體晶圓的寬度的最大值為101.1%至111.1%。 基於這些關係,例如無論半導體晶圓的寬度的最大值為150mm、200mm、300mm及450mm之任一種,保護膜形成用複合片的寬度的最大值相對於半導體晶圓的寬度的最大值均可為101.1%至129.3%。The maximum width of the composite sheet for forming a protective film of 155 mm to 194 mm is 103.3% to 129.3% relative to the maximum width of the semiconductor wafer of 150 mm. The maximum width of the composite sheet for forming a protective film of 205 mm to 250 mm is 102.5% to 125% relative to the maximum width of the 200 mm semiconductor wafer. The maximum width of the composite sheet for forming a protective film of 305mm to 350mm is 101.7% to 116.7% relative to the maximum of the width of the semiconductor wafer of 300mm. The maximum width of the composite sheet for forming a protective film of 455 mm to 500 mm is 101.1% to 111.1% relative to the maximum width of the semiconductor wafer of 450 mm. Based on these relationships, for example, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, 300 mm, or 450 mm, the maximum width of the composite sheet for forming a protective film relative to the maximum width of the semiconductor wafer may be 101.1% to 129.3%.

於保護膜形成用複合片的寬度的最大值為155mm至194mm之情形時,相對於半導體晶圓的寬度的最大值(150mm),例如可為103.3%至125.3%(155mm至188mm)、及103.3%至115.3%(155mm至173mm)之任一種。 於保護膜形成用複合片的寬度的最大值為205mm至250mm之情形時,相對於半導體晶圓的寬度的最大值(200mm),例如可為102.5%至120%(205mm至240mm)、及102.5%至115%(205mm至230mm)之任一種。 於保護膜形成用複合片的寬度的最大值為305mm至350mm之情形時,相對於半導體晶圓的寬度的最大值(300mm),例如可為101.7%至114%(305mm至342mm)、及101.7%至111%(305mm至333mm)之任一種。 於保護膜形成用複合片的寬度的最大值為455mm至500mm之情形時,相對於半導體晶圓的寬度的最大值(450mm),例如可為101.1%至110.4%(455mm至497mm)、及101.1%至110%(455mm至495mm)之任一種。 並且,例如無論半導體晶圓的寬度的最大值為150mm、200mm、300mm及450mm之任一種,保護膜形成用複合片的寬度的最大值相對於半導體晶圓的寬度的最大值均可為101.1%至125.3%、101.1%至120%、及101.1%至114%之任一種。When the maximum width of the composite sheet for forming a protective film is 155mm to 194mm, the maximum width of the semiconductor wafer (150mm) may be, for example, 103.3% to 125.3% (155mm to 188mm), and 103.3 Any one of% to 115.3% (155mm to 173mm). When the maximum width of the composite sheet for forming a protective film is 205mm to 250mm, the maximum width (200mm) of the semiconductor wafer may be, for example, 102.5% to 120% (205mm to 240mm), and 102.5 % To 115% (205mm to 230mm). When the maximum width of the composite sheet for forming a protective film is 305mm to 350mm, the maximum value (300mm) of the width of the semiconductor wafer may be, for example, 101.7% to 114% (305mm to 342mm), and 101.7 Any one of% to 111% (305mm to 333mm). When the maximum width of the protective film forming composite sheet is 455 mm to 500 mm, the maximum width of the semiconductor wafer (450 mm) may be, for example, 101.1% to 110.4% (455 mm to 497 mm), and 101.1 Any one of% to 110% (455mm to 495mm). And, for example, regardless of the maximum width of the semiconductor wafer being 150 mm, 200 mm, 300 mm, and 450 mm, the maximum width of the composite sheet for forming a protective film can be 101.1% relative to the maximum width of the semiconductor wafer. To 125.3%, 101.1% to 120%, and 101.1% to 114%.

[防污片(試片)之15%伸長性] 前述試片之15%伸長性可依據JIS K 7127:1999(ISO527-3:1995)、JIS K 7161:1994(ISO5271:1993)而確認。更具體而言,如下所述。 首先,製作寬度為15mm之防污片之試片。關於試片的長度,只要能夠進行後述之拉伸試驗,則並無特別限定,例如可為120mm以上。 繼而,將試片固定於用以將試片於長度方向上拉伸之拉伸機構(例如夾具)。此時,將試片拉伸之前的初始的夾頭間隔(換言之,將試片拉伸之前的試片中的利用拉伸機構之固定部位間的距離)設為100mm。並且,進行以下之拉伸試驗:於18℃至28℃之溫度條件下,自該狀態藉由拉伸機構將試片於該試片的長度方向上以200mm/min之速度(本說明書中,有時稱為「拉伸速度」)拉伸。此時,只要試片不斷裂而於試片的拉伸方向伸長15%以上,則試片具有15%伸長性。另一方面,若試片在於試片的拉伸方向上伸長15%以上之前斷裂,則試片不具有15%伸長性。此處,所謂「試片伸長15%以上」,意指將試片之拉伸試驗開始前的長度設為L0 ,將試片之拉伸試驗時的長度設為L1 時,滿足式:(L1 -L0 )/L0 ×100≧15。 本實施形態中,前述試片具有15%伸長性。[15% extensibility of antifouling sheet (test piece)] The 15% extensibility of the aforementioned test piece can be confirmed in accordance with JIS K 7127:1999 (ISO527-3:1995) and JIS K 7161:1994 (ISO5271:1993). More specifically, it is as follows. First, make a test piece of the anti-fouling sheet with a width of 15mm. The length of the test piece is not particularly limited as long as the tensile test described later can be performed, and it may be 120 mm or more, for example. Then, the test piece is fixed to a stretching mechanism (such as a clamp) for stretching the test piece in the length direction. At this time, the initial chuck interval before the test piece is stretched (in other words, the distance between the fixed positions of the test piece before the test piece is stretched by the stretching mechanism) is set to 100 mm. In addition, perform the following tensile test: under the temperature condition of 18°C to 28°C, from this state, the test piece is moved in the length direction of the test piece by the stretching mechanism at a speed of 200mm/min (in this manual, Sometimes called "stretching speed") Stretching. At this time, as long as the test piece does not break and elongates by 15% or more in the tensile direction of the test piece, the test piece has 15% extensibility. On the other hand, if the test piece breaks before it stretches by 15% or more in the tensile direction of the test piece, the test piece does not have 15% elongation. Here, the so-called "test piece elongation of 15% or more" means that when the length of the test piece before the start of the tensile test is set to L 0 and the length of the test piece during the tensile test is set to L 1 , the formula is satisfied: (L 1 -L 0 )/L 0 ×100≧15. In this embodiment, the aforementioned test piece has 15% extensibility.

本實施形態中,前述防污片及由前述防污片製作之前述試片均為以樹脂作為構成材料之樹脂層(換言之,膜或片),根據該樹脂層之製造方法而具有MD方向及TD方向。該情形時的「MD方向」及「TD方向」與該領域中的通常的含義相同。 亦即,所謂「MD方向」,意指樹脂層之成形時的樹脂的行進方向(Machine Direction),所謂「TD方向」,意指與樹脂層之成形時的樹脂的行進方向(MD方向)正交之方向(Transverse Direction)。In this embodiment, the aforementioned antifouling sheet and the aforementioned test piece made of the aforementioned antifouling sheet are both resin layers (in other words, films or sheets) that use resin as a constituent material, and have an MD direction and an MD direction according to the method of manufacturing the resin layer. TD direction. The "MD direction" and "TD direction" in this case have the same meanings as usual in this field. That is, the so-called "MD direction" means the machine direction of the resin during the molding of the resin layer (Machine Direction), and the so-called "TD direction" means the direction of travel (MD direction) of the resin during the molding of the resin layer. Transverse Direction.

本實施形態中,於進行上述之拉伸試驗時,無論前述試片的拉伸方向為何種方向,前述試片均具有15%伸長性。因此,前述試片例如在前述試片之MD方向及TD方向之2方向上均具有15%伸長性。In this embodiment, when the above-mentioned tensile test is performed, regardless of the direction in which the test piece is stretched, the test piece has 15% elongation. Therefore, the test piece has, for example, 15% extensibility in both the MD direction and the TD direction of the test piece.

[防污片(試片)之10%伸長時的拉伸強度] 前述試片之10%伸長時的拉伸強度係進行上述之拉伸試驗,試片未斷裂而於前述試片的拉伸方向上伸長10%時的拉伸強度。 本實施形態中,前述試片之10%伸長時的拉伸強度為4.0N/15mm以上。[Tensile strength of anti-fouling sheet (test piece) at 10% elongation] The tensile strength of the aforementioned test piece at 10% elongation is the tensile strength when the aforementioned test piece is not broken but is extended by 10% in the tensile direction of the aforementioned test piece. In this embodiment, the tensile strength of the aforementioned test piece at 10% elongation is 4.0N/15mm or more.

本實施形態中,進行上述之拉伸試驗時,無論拉伸方向為何種方向,前述試片之10%伸長時的拉伸強度均為4.0N/15mm以上。因此,例如在前述試片之MD方向及TD方向之2方向上,前述試片之10%伸長時的拉伸強度均為4.0N/15mm以上。In this embodiment, when the above-mentioned tensile test is performed, regardless of the direction of the tensile direction, the tensile strength of the aforementioned test piece at 10% elongation is 4.0 N/15 mm or more. Therefore, for example, in both the MD direction and the TD direction of the test piece, the tensile strength of the test piece at 10% elongation is 4.0N/15mm or more.

就上述之防污片的切斷適性更良好之方面而言,前述試片之10%伸長時的拉伸強度較佳為4.5N/15mm以上,更佳為5.0N/15mm以上,例如可為10N/15mm以上、15N/15mm以上、及20N/15mm以上之任一種。 並且,本實施形態中,在前述試片之MD方向及TD方向之2方向上進行上述之拉伸試驗時,較佳為在這些2方向之任一方向或兩方向上,使得試片之10%伸長時的拉伸強度為前述下限值以上,更佳為在兩方向上,使得試片之10%伸長時的拉伸強度為前述下限值以上。In terms of the above-mentioned antifouling sheet having better cutting adaptability, the tensile strength at 10% elongation of the aforementioned test piece is preferably 4.5N/15mm or more, more preferably 5.0N/15mm or more, for example, Any of 10N/15mm or more, 15N/15mm or more, and 20N/15mm or more. In addition, in this embodiment, when the above-mentioned tensile test is performed in two directions of the MD direction and the TD direction of the test piece, it is preferable to perform the tensile test in either or both of these two directions so that 10 of the test pieces are The tensile strength at% elongation is more than the aforementioned lower limit, and more preferably in both directions, the tensile strength at 10% elongation of the test piece is greater than the aforementioned lower limit.

前述試片之10%伸長時的拉伸強度的上限值並無特別限定。例如,就防污片之製造更容易之方面而言,前述拉伸強度亦可為470N/15mm以下。 例如,就於防污片或保護膜形成用複合片之切斷時,該切斷所使用之切刀的刃的磨耗得到抑制之方面而言,前述試片之10%伸長時的拉伸強度較佳為360N/15mm以下,例如可為250N/15mm以下、200N/15mm以下、150N/15mm以下、100N/15mm以下、及50N/15mm以下之任一種。 並且,本實施形態中,在前述試片之MD方向及TD方向之2方向上進行上述之拉伸試驗時,可在這些2方向之任一方向或兩方向上,使得試片之10%伸長時的拉伸強度為前述上限值以下,亦可在兩方向上,使得試片之10%伸長時的拉伸強度為前述上限值以下。The upper limit of the tensile strength at 10% elongation of the aforementioned test piece is not particularly limited. For example, in terms of easier manufacture of the antifouling sheet, the aforementioned tensile strength may also be 470N/15mm or less. For example, when cutting the antifouling sheet or the composite sheet for forming a protective film, the abrasion of the cutting blade used in the cutting is suppressed, the tensile strength of the aforementioned test piece at 10% elongation It is preferably 360N/15mm or less, for example, it may be any of 250N/15mm or less, 200N/15mm or less, 150N/15mm or less, 100N/15mm or less, and 50N/15mm or less. In addition, in this embodiment, when the above-mentioned tensile test is performed in the MD direction and the TD direction of the test piece, the test piece can be elongated by 10% in either or both of these two directions. The tensile strength at this time is less than the aforementioned upper limit, and it may be in both directions so that the tensile strength at 10% elongation of the test piece is less than the aforementioned upper limit.

前述試片之10%伸長時的拉伸強度可適宜調節為將上述之任一下限值與任一上限值任意組合而設定之範圍內。 例如,一實施形態中,前述拉伸強度較佳為4.0N/15mm至470N/15mm,更佳為4.5N/15mm至470N/15mm,例如可為10N/15mm至470N/15mm、15N/15mm至470N/15mm、及20N/15mm至470N/15mm之任一種。 另外,一實施形態中,前述拉伸強度較佳為4.0N/15mm至360N/15mm,例如可為4.0N/15mm至250N/15mm、4.0N/15mm至200N/15mm、4.0N/15mm至150N/15mm、4.0N/15mm至100N/15mm、及4.0N/15mm至50N/15mm之任一種。 另外,一實施形態中,前述拉伸強度較佳為4.5N/15mm至360N/15mm,例如可為10N/15mm至250N/15mm、10N/15mm至200N/15mm、10N/15mm至150N/15mm、15N/15mm至100N/15mm、及20N/15mm至50N/15mm之任一種。 並且,本實施形態中,在前述試片之MD方向及TD方向之2方向上進行上述之拉伸試驗時,較佳為在這些2方向之任一方向或兩方向上,使得試片之10%伸長時的拉伸強度為上述之數值範圍,更佳為在兩方向上,使得試片之10%伸長時的拉伸強度為上述之數值範圍。The tensile strength at 10% elongation of the aforementioned test piece can be suitably adjusted to be within the range set by any combination of any of the above-mentioned lower limit and any upper limit. For example, in one embodiment, the aforementioned tensile strength is preferably 4.0N/15mm to 470N/15mm, more preferably 4.5N/15mm to 470N/15mm, for example, 10N/15mm to 470N/15mm, 15N/15mm to Any one of 470N/15mm, and 20N/15mm to 470N/15mm. In addition, in one embodiment, the aforementioned tensile strength is preferably 4.0N/15mm to 360N/15mm, for example, 4.0N/15mm to 250N/15mm, 4.0N/15mm to 200N/15mm, 4.0N/15mm to 150N /15mm, 4.0N/15mm to 100N/15mm, and 4.0N/15mm to 50N/15mm. In addition, in one embodiment, the aforementioned tensile strength is preferably 4.5N/15mm to 360N/15mm, for example, 10N/15mm to 250N/15mm, 10N/15mm to 200N/15mm, 10N/15mm to 150N/15mm, Any one of 15N/15mm to 100N/15mm, and 20N/15mm to 50N/15mm. In addition, in this embodiment, when the above-mentioned tensile test is performed in two directions of the MD direction and the TD direction of the test piece, it is preferable to perform the tensile test in either or both of these two directions so that 10 of the test pieces are The tensile strength at% elongation is in the above numerical range, more preferably in both directions, so that the tensile strength at 10% elongation of the test piece is in the above numerical range.

前述試片(防污片)之15%伸長性及10%伸長時的拉伸強度例如均可藉由調節後述之基材、黏著劑層等構成防污片之各層的構成材料或厚度、或各層之形成方法來調節。The 15% elongation and the tensile strength at 10% elongation of the aforementioned test piece (anti-fouling sheet) can be adjusted, for example, by adjusting the constituent materials or thickness of each layer of the anti-fouling sheet, such as the substrate, adhesive layer, etc. described later, or The formation method of each layer can be adjusted.

用於確認上述之15%伸長性及10%伸長時的拉伸強度之前述試片可為由構成保護膜形成用複合片之前的階段的防污片所製作,亦可為自保護膜形成用複合片取出防污片並由該防污片所製作。無論為使用何種防污片之試片,上述之15%伸長性及10%伸長時的拉伸強度均成為同等。The aforementioned test piece used to confirm the 15% elongation and the tensile strength at 10% elongation can be made from the antifouling sheet at the stage before the composite sheet for forming a protective film, or it can be used for forming a self-protective film. The composite sheet is taken out of the anti-fouling sheet and made from the anti-fouling sheet. No matter what kind of antifouling sheet is used, the 15% elongation and the tensile strength at 10% elongation are the same.

藉由前述試片一併滿足上述之15%伸長性及10%伸長時的拉伸強度之條件,於將前述防污片切斷時,該切斷面中毛邊之產生得到抑制,顯示優異的切斷適性。並且,具備此種防污片之保護膜形成用複合片亦顯示優異的切斷適性。 本實施形態的保護膜形成用複合片於貼附於半導體晶圓之後的階段中進行切斷之情形時,要求防污片及保護膜形成用複合片具有如上述之拉伸特性。原因在於,保護膜形成用複合片係以於相對於該保護膜形成用複合片中之對半導體晶圓之貼附面呈平行的方向上被拉伸之狀態下貼附於半導體晶圓,維持在該狀態下被切斷。本實施形態的保護膜形成用複合片藉由具有如上述之拉伸特性,於貼附於半導體晶圓之後的階段中以被拉伸之狀態進行切斷之情形時,該保護膜形成用複合片的切斷適性良好,因此該保護膜形成用複合片的切斷面的粗糙得到抑制。When the aforementioned test piece satisfies the aforementioned 15% elongation and 10% elongation tensile strength conditions, when the aforementioned antifouling sheet is cut, the generation of burrs in the cut surface is suppressed, showing excellent Cut off suitability. In addition, the composite sheet for forming a protective film provided with such an antifouling sheet also exhibits excellent cutting suitability. When the composite sheet for forming a protective film of the present embodiment is cut in a stage after being attached to a semiconductor wafer, the antifouling sheet and the composite sheet for forming a protective film are required to have the above-mentioned tensile properties. The reason is that the composite sheet for forming a protective film is attached to the semiconductor wafer in a state of being stretched in a direction parallel to the attaching surface to the semiconductor wafer in the composite sheet for forming a protective film to maintain It is cut off in this state. The composite sheet for forming a protective film of this embodiment has the above-mentioned stretching characteristics, and when it is cut in a stretched state in the stage after being attached to a semiconductor wafer, the composite sheet for forming a protective film Since the cutability of the sheet is good, the roughness of the cut surface of the composite sheet for forming a protective film is suppressed.

[防污片的透過清晰度] 前述防污片的透過清晰度並無特別限定,例如可為30以上,較佳為100以上,可為150以上、200以上、250以上、300以上、350以上、及400以上之任一種。前述透過清晰度越高,於藉由對保護膜形成用膜隔著防污片照射雷射光而進行雷射印字時,能夠更清晰地印字。另外,形成於保護膜形成用膜或保護膜之雷射印字之經由防污片之視認性(本說明書中,有時稱為「雷射印字視認性」)變得更高。[Clearance of antifouling sheet] The transparency of the antifouling sheet is not particularly limited. For example, it can be 30 or more, preferably 100 or more, and can be any of 150 or more, 200 or more, 250 or more, 300 or more, 350 or more, and 400 or more. The higher the transmission clarity, the more clear printing can be achieved when laser printing is performed by irradiating the protective film forming film with laser light through the antifouling sheet. In addition, the visibility of the laser printing formed on the protective film formation film or the protective film through the antifouling sheet (in this specification, it may be referred to as "laser printing visibility") becomes higher.

前述防污片的透過清晰度的上限值並無特別限定。例如,就防污片之製造更容易之方面而言,前述透過清晰度可為500以下。The upper limit of the transparency of the antifouling sheet is not particularly limited. For example, in terms of easier manufacture of the anti-fouling sheet, the aforementioned transmission clarity may be 500 or less.

前述防污片的透過清晰度可適宜調節為將上述之任一下限值與上限值任意組合而設定之範圍內。例如,一實施形態中,前述透過清晰度可為30至500,較佳為100至500,可為150至500、200至500、250至500、300至500、350至500、及400至500之任一種。The transparency of the aforementioned antifouling sheet can be suitably adjusted to be within a range set by any combination of the above-mentioned lower limit and upper limit. For example, in one embodiment, the aforementioned transmission clarity may be 30 to 500, preferably 100 to 500, and may be 150 to 500, 200 to 500, 250 to 500, 300 to 500, 350 to 500, and 400 to 500 Of any kind.

前述防污片的透過清晰度意指如後文實施例中所述,依據JIS K 7374:2007,將使照射光透過之狹縫的寬度設為0.125mm、0.25mm、0.5mm、1mm及2mm之5種,於各情形時,對防污片取得圖像清晰性(圖像清晰度)之評價值時的該評價值之合計值。The transparency of the aforementioned antifouling sheet means that the width of the slit through which the irradiated light is transmitted is set to 0.125mm, 0.25mm, 0.5mm, 1mm, and 2mm in accordance with JIS K 7374:2007, as described in the following examples. Of the five types, in each case, the total value of the evaluation value when the evaluation value of the image clarity (image clarity) is obtained for the antifouling sheet.

以下,對構成前述保護膜形成用複合片之各層詳細地進行說明。Hereinafter, each layer constituting the aforementioned composite sheet for forming a protective film will be described in detail.

◎防污片 前述防污片可由1層(單層)所構成,亦可由2層以上之多層所構成。於防污片由多層所構成之情形時,這些多層的構成材料及厚度相互可相同亦可不同,這些多層的組合只要不損害本發明的效果,則並無特別限定。◎Anti-fouling film The aforementioned antifouling sheet may be composed of one layer (single layer), or may be composed of multiple layers of two or more layers. When the antifouling sheet is composed of multiple layers, the constituent materials and thicknesses of these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as the effect of the present invention is not impaired.

此外,本說明書中,並不限於防污片之情形,所謂「多層相互可相同亦可不同」,意指「可全部層相同,亦可全部層皆不同,還可僅一部分層相同」,進而,所謂「多層相互不同」,意指「各層的構成材料及厚度的至少一者相互不同」。In addition, in this specification, it is not limited to the case of the antifouling sheet. The so-called "multilayers may be the same or different from each other" means "all the layers may be the same, or all the layers may be different, and only a part of the layers may be the same." , The so-called "multi-layers are different from each other" means that "at least one of the constituent materials and thickness of each layer is different from each other."

防污片可為透明,亦可為不透明,還可根據目的而著色。 例如,於保護膜形成用膜具有能量線硬化性之情形時,防污片較佳為使能量線透過。 例如,對貼附於半導體晶圓的內面之保護膜形成用膜或保護膜實施雷射印字,為了經由防污片確認該印字,防污片較佳為透明。 例如,為了對於保護膜形成用複合片中的保護膜形成用膜或貼附於半導體晶圓的內面之保護膜形成用膜或保護膜經由防污片進行光學檢查,防污片較佳為透明。The antifouling sheet may be transparent or opaque, and may be colored according to the purpose. For example, when the film for forming a protective film has energy ray curability, the antifouling sheet preferably allows energy ray to pass through. For example, laser printing is performed on a protective film forming film or protective film attached to the inner surface of a semiconductor wafer, and in order to confirm the printing through the antifouling sheet, the antifouling sheet is preferably transparent. For example, in order to optically inspect the protective film forming film in the protective film forming composite sheet or the protective film forming film or the protective film attached to the inner surface of the semiconductor wafer through the antifouling sheet, the antifouling sheet is preferably Transparent.

本說明書中,所謂「能量線」,意指具有能量量子之電磁波或帶電粒子束。作為能量線的示例,可列舉紫外線、放射線、電子束等。紫外線例如可藉由使用高壓水銀燈、熔合燈、氙氣燈、黑光燈或LED(Light Emitting Diode;發光二極體)燈等作為紫外線源而進行照射。電子束可照射藉由電子束加速器等產生之電子束。 另外,本說明書中,所謂「能量線硬化性」,意指藉由照射能量線而硬化之性質,所謂「非能量線硬化性」,意指即便照射能量線亦不硬化之性質。In this specification, the so-called "energy line" refers to electromagnetic waves or charged particle beams with energy quantum. Examples of energy rays include ultraviolet rays, radiation rays, electron beams, and the like. The ultraviolet light can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light lamp, or an LED (Light Emitting Diode) lamp as an ultraviolet source. The electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like. In addition, in this specification, the term "energy ray curability" means the property of curing by irradiation with energy rays, and the term "non-energy ray curability" means the property of not curing even if energy rays are irradiated.

作為防污片,例如可列舉:具備基材、及形成於前述基材的一面上之黏著劑層之片;僅由基材所構成之片等。 於使用具備黏著劑層之保護膜形成用複合片之情形時,可藉由黏著劑層之特性之變化、更具體而言黏著劑層之硬化之有無,而容易地調節防污片與保護膜形成用膜或其硬化物之間的黏著力。 於使用僅由基材所構成之保護膜形成用複合片之情形時,由於此種保護膜形成用複合片廉價,故而能夠廉價地製造附保護膜之半導體晶片。As an antifouling sheet, for example, a sheet provided with a substrate and an adhesive layer formed on one surface of the substrate; a sheet composed of only the substrate, and the like. When using a composite sheet for forming a protective film with an adhesive layer, the antifouling sheet and the protective film can be easily adjusted by changing the characteristics of the adhesive layer, more specifically, whether the adhesive layer is hardened or not. Adhesion between the film or its cured product. When using a composite sheet for forming a protective film composed of only a base material, since such a composite sheet for forming a protective film is inexpensive, a semiconductor wafer with a protective film can be manufactured inexpensively.

以下,一邊參照圖式,一邊按照防污片的每一種類說明前述保護膜形成用複合片的整體構成例。此外,以下之說明中所使用之圖中,為了易於理解本發明的特徵,方便起見,有時將成為主要部分之部分放大表示,而並不限於各構成要素的尺寸比率等與實際相同。Hereinafter, an example of the overall configuration of the composite sheet for forming a protective film will be described for each type of antifouling sheet while referring to the drawings. In addition, in the drawings used in the following description, in order to make it easier to understand the characteristics of the present invention and for convenience, the main parts may be enlarged and shown, and the dimensional ratios of the constituent elements are not limited to the actual ones.

圖1係以示意方式表示本發明的一實施形態的保護膜形成用複合片的一例之剖視圖。 此處所示之保護膜形成用複合片101具備防污片10、及形成於防污片10的一面(本說明書中,有時稱為「第1面」)10a上之保護膜形成用膜13。Fig. 1 is a cross-sectional view schematically showing an example of a composite sheet for forming a protective film according to an embodiment of the present invention. The composite sheet 101 for forming a protective film shown here includes an antifouling sheet 10 and a film for forming a protective film formed on one side of the antifouling sheet 10 (in this specification, sometimes referred to as the "first side") 10a 13.

防污片10具備基材11、及形成於基材11的一面(本說明書中,有時稱為「第1面」)11a上之黏著劑層12。亦即,防污片10係基材11及黏著劑層12於這些層的厚度方向上積層而構成。The antifouling sheet 10 includes a base material 11 and an adhesive layer 12 formed on one surface of the base material 11 (in this specification, it may be referred to as a "first surface") 11a. That is, the antifouling sheet 10 is formed by stacking the base material 11 and the adhesive layer 12 in the thickness direction of these layers.

亦即,保護膜形成用複合片101係基材11、黏著劑層12及保護膜形成用膜13依序於這些層的厚度方向上積層而構成。 另外,保護膜形成用複合片101進而於保護膜形成用膜13中之與黏著劑層12側為相反側的面(本說明書中,有時稱為「第1面」)13a上具備剝離膜15。That is, the composite sheet 101 for forming a protective film is composed of a base material 11, an adhesive layer 12, and a film 13 for forming a protective film in order in the thickness direction of these layers. In addition, the composite sheet 101 for forming a protective film is further provided with a release film on the surface 13a opposite to the adhesive layer 12 side of the film 13 for forming a protective film (in this specification, sometimes referred to as the "first surface") 13a 15.

防污片所使用之加工前的基材中的單面或雙面有時成為具有凹凸形狀之凹凸面。於基材的雙面為凹凸度低之平滑面之情形時,根據該基材的構成材料,於將基材捲取成輥狀時,有時基材彼此的接觸面貼附而黏連,使用變得困難。但是,若基材彼此的接觸面中至少一面為凹凸面,則接觸面的面積變小,因此黏連得到抑制。 因此,保護膜形成用複合片101中,基材11的第1面11a、及基材11中之與第1面11a側為相反側的面(本說明書中,有時稱為「第2面」)11b之任一面或兩面可為凹凸面。並且,於基材11的第1面11a及第2面11b之僅其中一面為凹凸面之情形時,可選其中任一面作為凹凸面。One side or both sides of the base material before processing used in the antifouling sheet may become an uneven surface having an uneven shape. When the both sides of the substrate are smooth surfaces with low concavity and convexity, depending on the constituent material of the substrate, when the substrate is wound into a roll, the contact surfaces of the substrates may stick and stick. It becomes difficult to use. However, if at least one of the contact surfaces of the substrates is a concave-convex surface, the area of the contact surface becomes small, and therefore blocking is suppressed. Therefore, in the composite sheet 101 for forming a protective film, the first surface 11a of the substrate 11 and the surface of the substrate 11 opposite to the first surface 11a side (in this specification, sometimes referred to as "second surface ") Either or both sides of 11b can be concave and convex. In addition, when only one of the first surface 11a and the second surface 11b of the substrate 11 is a concave-convex surface, either surface can be selected as the concave-convex surface.

保護膜形成用複合片101中,防污片10的第1面10a與黏著劑層12中之與基材11側為相反側的面(本說明書中,有時稱為「第1面」)12a的含義相同。 另外,保護膜形成用膜13的第1面13a與保護膜形成用複合片101中之對半導體晶圓之貼附面101a的含義相同。In the composite sheet 101 for forming a protective film, the first surface 10a of the antifouling sheet 10 and the surface of the adhesive layer 12 opposite to the substrate 11 side (in this specification, it may be referred to as the "first surface") The meaning of 12a is the same. In addition, the first surface 13a of the protective film forming film 13 has the same meaning as the attaching surface 101a to the semiconductor wafer in the protective film forming composite sheet 101.

保護膜形成用膜13的第1面13a較佳為能夠被覆作為保護膜形成用複合片101之貼附對象之半導體晶圓的內面的整個區域。The first surface 13a of the protective film formation film 13 is preferably capable of covering the entire area of the inner surface of the semiconductor wafer to be attached to the protective film formation composite sheet 101.

保護膜形成用複合片101的寬度W101 的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm。 於基材11、黏著劑層12及保護膜形成用膜13之各者的寬度的最大值有相互不同之情形時,將其中的最大值設為寬度W101 的最大值。圖1所示之剖面中,基材11、黏著劑層12及保護膜形成用膜13之各者的寬度均相同。 此外,於如保護膜形成用複合片101般,保護膜形成用複合片具備剝離膜之情形時,本實施形態中,保護膜形成用複合片的寬度(例如,W101 )不包括剝離膜的寬度。 The maximum value of the width W 101 of the protective film forming composite sheet 101 is 155 mm to 194 mm, 205 mm to 250 mm, 305 mm to 350 mm, or 455 mm to 500 mm. To the substrate 11, adhesive layer 12 and the protective film is different from each other when there is a case where the maximum width of each of those film 13, wherein the maximum value to the maximum value of the width W 101. In the cross section shown in FIG. 1, the width of each of the base material 11, the adhesive layer 12, and the film 13 for protective film formation is the same. In addition, when the composite sheet for forming a protective film is provided with a release film like the composite sheet for forming a protective film 101, in this embodiment, the width of the composite sheet for forming a protective film (for example, W 101 ) does not include the width of the release film. width.

保護膜形成用複合片101中,防污片10之前述試片具有15%伸長性。進而,防污片10之前述試片之10%伸長時的拉伸強度為4.0N/15mm以上。In the composite sheet 101 for forming a protective film, the aforementioned test piece of the antifouling sheet 10 has 15% extensibility. Furthermore, the tensile strength of the aforementioned test piece of the antifouling sheet 10 at 10% elongation is 4.0 N/15 mm or more.

自保護膜形成用複合片101之上方往下看而俯視時,換言之,自保護膜形成用膜13的第1面13a側往下看而俯視時,保護膜形成用複合片101的整體的形狀(亦即,保護膜形成用複合片101整體的平面形狀)並無特別限定。 如此俯視保護膜形成用複合片101時,基材11、黏著劑層12及保護膜形成用膜13之各者的形狀(亦即,各者的第1面的平面形狀)可全部相同,亦可全部皆不同,還可僅一部分相同,但較佳為全部相同。 另外,如此俯視保護膜形成用複合片101時,基材11、黏著劑層12及保護膜形成用膜13之各者的大小(亦即,各者的第1面的面積)可全部相同,亦可全部皆不同,還可僅一部分相同。但是,這些的大小的相互的誤差(面積的誤差)較佳為90%以內,更佳為95%以內,進而較佳為98%以內。The overall shape of the protective film forming composite sheet 101 when looking down from above the protective film forming composite sheet 101 in a plan view, in other words, when looking down from the first surface 13a side of the protective film forming film 13 (That is, the overall planar shape of the composite sheet 101 for forming a protective film) is not particularly limited. When the composite sheet 101 for forming a protective film is viewed from above, the shape of each of the base material 11, the adhesive layer 12, and the film 13 for forming a protective film (that is, the planar shape of the first surface of each) may all be the same, or All may be different, and only a part may be the same, but it is preferable that all are the same. In addition, when the composite sheet 101 for forming a protective film is viewed from above, the size of each of the substrate 11, the adhesive layer 12, and the film 13 for forming a protective film (that is, the area of the first surface of each) may all be the same. All of them may be different, or only some of them may be the same. However, the mutual error of these sizes (error of area) is preferably within 90%, more preferably within 95%, and still more preferably within 98%.

例如,就保護膜形成用複合片101的通用性特別高之方面而言,保護膜形成用複合片101整體的前述平面形狀較佳為矩形狀或帶狀。 前述平面形狀為帶狀之保護膜形成用複合片101適於沿該保護膜形成用複合片101的長度方向捲取成輥狀而進行保管。For example, in terms of particularly high versatility of the composite sheet 101 for forming a protective film, the aforementioned planar shape of the entire composite sheet 101 for forming a protective film is preferably a rectangular shape or a band shape. The composite sheet 101 for forming a protective film whose planar shape is a belt shape is suitable for being wound in a roll shape along the longitudinal direction of the composite sheet 101 for forming a protective film, for storage.

圖2係以示意方式表示整體之前述平面形狀為矩形狀或帶狀之保護膜形成用複合片101的一例之俯視圖。 此外,圖2以後的圖中,對與既已說明之圖所示相同的構成要素,標附與該已說明之圖之情形相同的符號,並省略該構成要素之詳細說明。FIG. 2 is a plan view schematically showing an example of a composite sheet 101 for forming a protective film whose overall planar shape is a rectangular shape or a strip shape. In addition, in the drawings following FIG. 2, the same components as those shown in the previously described diagrams are assigned the same reference numerals as in the previously described diagrams, and detailed descriptions of the components are omitted.

圖2所示之保護膜形成用複合片101中,例如於該保護膜形成用複合片101的長度方向(相對於圖2中的寬度W101 的方向呈正交之方向)的整個區域,基材11、黏著劑層12及保護膜形成用膜13之各者的寬度可均相同。亦即,保護膜形成用複合片101中,可於基材11的第1面11a的整面設置黏著劑層12,於黏著劑層12的第1面12a的整面設置保護膜形成用膜13。In the composite sheet 101 for forming a protective film shown in FIG. 2, for example, the entire area of the composite sheet 101 for forming a protective film (in a direction orthogonal to the direction of the width W 101 in FIG. 2) is The width of each of the material 11, the adhesive layer 12, and the protective film forming film 13 may all be the same. That is, in the composite sheet 101 for forming a protective film, the adhesive layer 12 may be provided on the entire surface of the first surface 11a of the base material 11, and the protective film forming film may be provided on the entire surface of the first surface 12a of the adhesive layer 12 13.

圖2所示之保護膜形成用複合片101中,例如於該保護膜形成用複合片101的長度方向上,能夠切出用以貼附於半導體晶圓之多片保護膜形成用複合片。In the composite sheet 101 for forming a protective film shown in FIG. 2, for example, in the longitudinal direction of the composite sheet 101 for forming a protective film, a plurality of composite sheets for forming a protective film for attaching to a semiconductor wafer can be cut out.

保護膜形成用複合片101整體的前述平面形狀亦可為不相當於矩形狀及帶狀之任一形狀之其他形狀。The aforementioned planar shape of the entire composite sheet 101 for forming a protective film may be another shape that does not correspond to any of a rectangular shape and a band shape.

圖3所示之保護膜形成用複合片111相當於圖2所示之保護膜形成用複合片101中,以獲得多片前述平面形狀均為圓形狀之基材11、黏著劑層12、及保護膜形成用膜13之積層物之方式,於保護膜形成用複合片101的長度方向上進行沖裁加工,進而移除不相當於前述積層物之部位所得之複合片。The composite sheet 111 for forming a protective film shown in FIG. 3 is equivalent to the composite sheet 101 for forming a protective film shown in FIG. In the form of the laminate of the protective film formation film 13, punching is performed in the longitudinal direction of the protective film formation composite sheet 101, and the composite sheet obtained by removing the part that does not correspond to the aforementioned laminate.

圖3所示之保護膜形成用複合片111係於前述平面形狀為矩形狀或帶狀之剝離膜15的長度方向上,配置多片的前述平面形狀均為圓形狀之基材11、黏著劑層12、及保護膜形成用膜13之積層物1111而構成。前述積層物1111可謂為本身相當於保護膜形成用複合片,可說是前述平面形狀不相當於矩形狀及帶狀之任一形狀之其他形狀的保護膜形成用複合片。The composite sheet 111 for forming a protective film shown in FIG. 3 is in the longitudinal direction of the release film 15 whose planar shape is rectangular or tape-like, and a plurality of substrates 11 and adhesives whose planar shapes are all round are arranged. The layer 12 and the layered product 1111 of the film 13 for protective film formation are comprised. The laminate 1111 itself can be said to be equivalent to a composite sheet for forming a protective film, and it can be said that it is a composite sheet for forming a protective film of another shape whose planar shape does not correspond to either a rectangular shape or a band shape.

此外,圖3中顯示出了前述積層物1111的寬度(換言之,保護膜形成用複合片111的寬度W111 )略窄於剝離膜15的寬度之情形,但前述積層物111的寬度(保護膜形成用複合片111的寬度W111 )亦可與剝離膜15的寬度相同。In addition, FIG. 3 shows that the width of the aforementioned laminate 1111 (in other words, the width W 111 of the protective film forming composite sheet 111) is slightly narrower than the width of the release film 15, but the width of the aforementioned laminate 111 (protective film The width W 111 ) of the forming composite sheet 111 may be the same as the width of the release film 15.

圖2所示之保護膜形成用複合片101相較於圖3所示之保護膜形成用複合片111於保管性及使用性之方面優異。 更具體而言,保護膜形成用複合片101可使構成該保護膜形成用複合片101之全部層(基材11、黏著劑層12、保護膜形成用膜13、剝離膜15)於俯視時的形狀及大小相同或相近,此種保護膜形成用複合片101與保護膜形成用複合片111不同,捲取成輥狀而進行保管時,能夠抑制產生捲痕,保管性優異。 另外,於將保護膜形成用複合片111貼附於半導體晶圓時,必須使前述積層物1111與半導體晶圓進行對位,但於將保護膜形成用複合片101貼附於半導體晶圓時,不需要此種對位,保護膜形成用複合片101的使用性優異。The composite sheet 101 for forming a protective film shown in FIG. 2 is superior to the composite sheet 111 for forming a protective film shown in FIG. 3 in terms of storage properties and usability. More specifically, the composite sheet 101 for forming a protective film can make all the layers (the base material 11, the adhesive layer 12, the film 13 for forming a protective film, and the release film 15) constituting the composite sheet 101 for forming the protective film viewed in a plan view. Different from the composite sheet for protective film formation 101 and the composite sheet for protective film formation 111, when the composite sheet 101 for forming a protective film and the composite sheet 111 for forming a protective film are wound into a roll shape and stored, the generation of curl marks can be suppressed and the storage performance is excellent. In addition, when attaching the protective film forming composite sheet 111 to the semiconductor wafer, the aforementioned laminate 1111 must be aligned with the semiconductor wafer, but when attaching the protective film forming composite sheet 101 to the semiconductor wafer There is no need for such alignment, and the composite sheet 101 for forming a protective film is excellent in usability.

保護膜形成用複合片101係藉由以移除剝離膜15之狀態,將該保護膜形成用複合片101中的保護膜形成用膜13的第1面13a貼附於半導體晶圓(省略圖示)的內面而使用。The protective film forming composite sheet 101 is a state in which the release film 15 is removed, and the first surface 13a of the protective film forming film 13 in the protective film forming composite sheet 101 is attached to a semiconductor wafer (illustration omitted) Shown) inside.

圖4係以示意方式表示本發明的一實施形態的保護膜形成用複合片的另一例之剖視圖。4 is a cross-sectional view schematically showing another example of the composite sheet for forming a protective film according to an embodiment of the present invention.

此處所示之保護膜形成用複合片102除了不具備黏著劑層12(亦即,防污片僅由基材所構成)之方面以外,與圖1所示之保護膜形成用複合片101相同。換言之,保護膜形成用複合片102除了具有不具備黏著劑層12之防污片20代替防污片10之方面以外,與保護膜形成用複合片101相同。The composite sheet 102 for forming a protective film shown here is similar to the composite sheet 101 for forming a protective film shown in FIG. 1 except that it does not have the adhesive layer 12 (that is, the antifouling sheet is composed of only a base material). the same. In other words, the composite sheet 102 for forming a protective film is the same as the composite sheet 101 for forming a protective film except that it has the antifouling sheet 20 without the adhesive layer 12 instead of the antifouling sheet 10.

保護膜形成用複合片102中,基材11的第1面11a與防污片20之保護膜形成用膜13側的面(本說明書中,有時稱為「第1面」)20a的含義相同。 另外,保護膜形成用膜13的第1面13a與保護膜形成用複合片102中之對半導體晶圓之貼附面102a的含義相同。In the protective film forming composite sheet 102, the first surface 11a of the base material 11 and the surface of the antifouling sheet 20 on the side of the protective film forming film 13 (in this specification, sometimes referred to as the "first surface") 20a means the same. In addition, the first surface 13a of the protective film forming film 13 has the same meaning as the attaching surface 102a to the semiconductor wafer in the protective film forming composite sheet 102.

保護膜形成用複合片102的寬度W102 的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm。 保護膜形成用複合片102中,防污片20之前述試片具有15%伸長性。進而,防污片20之前述試片之10%伸長時的拉伸強度為4.0N/15mm以上。 The maximum value of the width W 102 of the composite sheet 102 for forming a protective film is 155 mm to 194 mm, 205 mm to 250 mm, 305 mm to 350 mm, or 455 mm to 500 mm. In the composite sheet 102 for forming a protective film, the aforementioned test piece of the antifouling sheet 20 has 15% extensibility. Furthermore, the tensile strength of the aforementioned test piece of the antifouling sheet 20 at 10% elongation is 4.0 N/15 mm or more.

保護膜形成用複合片102係藉由以移除剝離膜15之狀態,將該保護膜形成用複合片102中的保護膜形成用膜13的第1面13a貼附於半導體晶圓(省略圖示)的內面而使用。The protective film forming composite sheet 102 is a state in which the release film 15 is removed, and the first surface 13a of the protective film forming film 13 in the protective film forming composite sheet 102 is attached to a semiconductor wafer (illustration omitted) Shown) inside.

本實施形態的保護膜形成用複合片並不限定於圖1至圖4所示之保護膜形成用複合片。例如,本實施形態的保護膜形成用複合片亦可在無損本發明的效果之範圍內,將圖1至圖4所示之保護膜形成用複合片的一部分構成變更或刪除,或者對圖1至圖4所示之保護膜形成用複合片進一步追加其他構成。The composite sheet for forming a protective film of this embodiment is not limited to the composite sheet for forming a protective film shown in FIGS. 1 to 4. For example, in the composite sheet for forming a protective film of this embodiment, part of the composite sheet for forming a protective film shown in FIGS. 1 to 4 may be changed or deleted within the range that does not impair the effects of the present invention, or it may be modified from FIG. 1 To the composite sheet for forming a protective film shown in FIG. 4, other structures are further added.

例如,本實施形態的保護膜形成用複合片亦可具備不相當於基材、黏著劑層、保護膜形成用膜、及剝離膜之任一層之其他層。 前述其他層的種類及前述其他層的配置位置並無特別限定,可根據目的任意選擇。For example, the composite sheet for forming a protective film of this embodiment may include other layers that are not equivalent to any of the base material, the adhesive layer, the film for forming a protective film, and the release film. The type of the aforementioned other layer and the arrangement position of the aforementioned other layer are not particularly limited, and can be arbitrarily selected according to the purpose.

具備前述其他層之保護膜形成用複合片亦較佳為滿足上文說明之形狀及大小之條件。 亦即,自上方往下看而俯視具備前述其他層之保護膜形成用複合片時的整體的形狀(保護膜形成用複合片整體的平面形狀)並無特別限定。並且,如此俯視保護膜形成用複合片時,基材、黏著劑層、保護膜形成用膜及前述其他層之各者的形狀可全部相同,亦可全部皆不同,還可僅一部分相同,但較佳為全部相同。 另外,如此俯視保護膜形成用複合片時,基材、黏著劑層、保護膜形成用膜及前述其他層之各者的大小可全部相同,亦可全部皆不同,還可僅一部分相同。但是,這些的大小的相互的誤差(面積的誤差)較佳為90%以內,更佳為95%以內,進而較佳為98%以內。The composite sheet for forming a protective film provided with the aforementioned other layers also preferably satisfies the conditions of the shape and size described above. That is, the overall shape (planar shape of the entire composite sheet for forming a protective film) when the composite sheet for forming a protective film is provided with the other layer as viewed from above is not particularly limited. In addition, when the composite sheet for forming a protective film is viewed from above, the shapes of the base material, the adhesive layer, the film for forming the protective film, and the aforementioned other layers may all be the same, or all of them may be different, or only a part may be the same, but Preferably they are all the same. In addition, when the composite sheet for forming a protective film is viewed from above, the size of each of the base material, the adhesive layer, the film for forming the protective film, and the other layers described above may all be the same, or all may be different, or only a part of the same may be the same. However, the mutual error of these sizes (error of area) is preferably within 90%, more preferably within 95%, and still more preferably within 98%.

其次,對構成防污片之各層更詳細地進行說明。Next, each layer constituting the antifouling sheet will be described in more detail.

○基材 前述基材為片狀或膜狀,作為前述基材的構成材料,例如可列舉各種樹脂。 作為前述樹脂,例如可列舉:低密度聚乙烯(LDPE;low density polyethylene)、直鏈低密度聚乙烯(LLDPE;linear low density polyethylene)、高密度聚乙烯(HDPE;high density polyethylene)等聚乙烯;聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、降冰片烯樹脂等聚乙烯以外的聚烯烴;乙烯-乙酸乙烯酯共聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-降冰片烯共聚物等乙烯系共聚物(使用乙烯作為單體而獲得之共聚物);聚氯乙烯、氯乙烯共聚物等氯乙烯系樹脂(使用氯乙烯作為單體而獲得之樹脂);聚苯乙烯;聚環烯烴;聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、聚間苯二甲酸乙二酯、聚-2,6-萘二甲酸乙二酯、全部構成單元具有芳香族環式基之全芳香族聚酯等聚酯;2種以上之前述聚酯之共聚物;聚(甲基)丙烯酸酯;聚胺基甲酸酯;聚丙烯酸胺基甲酸酯;聚醯亞胺;聚醯胺;聚碳酸酯;氟樹脂;聚縮醛;改性聚苯醚;聚苯硫醚;聚碸;聚醚酮等。 另外,作為前述樹脂,例如亦可列舉前述聚酯與前述聚酯以外的樹脂之混合物等聚合物合金。前述聚酯與前述聚酯以外的樹脂之聚合物合金較佳為聚酯以外的樹脂的量為相對較少量。 另外,作為前述樹脂,例如亦可列舉:前文例示之前述樹脂中的1種或2種以上交聯而成之交聯樹脂;使用前文例示之前述樹脂中的1種或2種以上之離子聚合物等改性樹脂。○Substrate The substrate is in a sheet shape or a film shape, and as a constituent material of the substrate, various resins can be cited, for example. Examples of the aforementioned resin include polyethylenes such as low density polyethylene (LDPE; low density polyethylene), linear low density polyethylene (LLDPE), and high density polyethylene (HDPE; high density polyethylene); Polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, norbornene resin; ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene- (Meth) acrylate copolymers, ethylene-norbornene copolymers and other vinyl copolymers (copolymers obtained by using ethylene as a monomer); vinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymers (using chlorine Resin obtained from ethylene as a monomer); polystyrene; polycyclic olefin; polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate Diesters, poly(ethylene-2,6-naphthalate), wholly aromatic polyesters with aromatic cyclic groups in all constituent units; copolymers of two or more of the aforementioned polyesters; poly(methyl) ) Acrylate; Polyurethane; Polyacrylic urethane; Polyimide; Polyamide; Polycarbonate; Fluororesin; Polyacetal; Modified polyphenylene ether; Polyphenylene sulfide; Poly turquoise; polyether ketone and so on. Moreover, as said resin, polymer alloys, such as a mixture of the said polyester and resin other than the said polyester, can also be mentioned, for example. The polymer alloy of the polyester and the resin other than the polyester preferably has a relatively small amount of the resin other than the polyester. In addition, as the aforementioned resin, for example, a cross-linked resin obtained by cross-linking one or more of the aforementioned resins as exemplified above; ionic polymerization using one or more of the aforementioned resins exemplified in the foregoing Modified resins such as materials.

構成基材之樹脂可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The resin constituting the base material may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

基材可由1層(單層)所構成,亦可由2層以上之多層所構成,於由多層所構成之情形時,這些多層相互可相同亦可不同,這些多層的組合並無特別限定。The base material may be composed of one layer (single layer) or two or more layers. In the case of being composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

基材的厚度較佳為8μm至300μm,更佳為10μm至260μm,例如可為10μm至200μm、10μm至160μm、及10μm至120μm之任一種。藉由基材的厚度為此種範圍,前述保護膜形成用複合片的可撓性、及對半導體晶圓或半導體晶片之貼附性進一步提高。此處,所謂「基材的厚度」,意指基材整體的厚度,例如所謂由多層所構成之基材的厚度,意指構成基材之全部層的合計厚度。The thickness of the substrate is preferably 8 μm to 300 μm, more preferably 10 μm to 260 μm, for example, can be any of 10 μm to 200 μm, 10 μm to 160 μm, and 10 μm to 120 μm. When the thickness of the base material is in this range, the flexibility of the composite sheet for forming a protective film and the adhesion to the semiconductor wafer or the semiconductor wafer are further improved. Here, the "thickness of the substrate" means the thickness of the entire substrate. For example, the thickness of the substrate composed of multiple layers means the total thickness of all layers constituting the substrate.

如上文所說明,防污片(前述試片)具有15%伸長性,基材具有伸長性。具備此種基材之防污片適於在後述之附保護膜之半導體晶片之製造方法中的拾取步驟中,一邊將防污片於相對於該防污片之保護膜或保護膜形成用膜之側的面呈平行的方向上擴張,一邊拾取附保護膜之半導體晶片之情形。 作為此種伸長性優異之基材的構成材料,例如可列舉:聚乙烯、聚丙烯等聚烯烴;聚對苯二甲酸乙二酯等聚酯。As explained above, the antifouling sheet (the aforementioned test piece) has 15% extensibility, and the substrate has extensibility. The antifouling sheet provided with such a substrate is suitable for placing the antifouling sheet on a protective film or a film for forming a protective film relative to the antifouling sheet in the pickup step in the method of manufacturing a semiconductor wafer with a protective film described later When the side surface is expanded in a parallel direction, while picking up a semiconductor chip with a protective film. Examples of the constituent material of such a substrate having excellent extensibility include polyolefins such as polyethylene and polypropylene, and polyesters such as polyethylene terephthalate.

基材中,除前述樹脂等主要構成材料以外,亦可含有填充材料、著色劑、抗氧化劑、有機潤滑劑、觸媒、軟化劑(塑化劑)等公知的各種添加劑。The base material may contain various known additives such as fillers, colorants, antioxidants, organic lubricants, catalysts, and softeners (plasticizers) in addition to the aforementioned main constituent materials such as resins.

基材可為透明,亦可為不透明,還可根據目的而著色,還可蒸鍍其他層。 例如,於保護膜形成用膜具有能量線硬化性之情形時,基材較佳為使能量線透過。 例如,對貼附於半導體晶圓的內面之保護膜形成用膜或保護膜實施雷射印字,為了經由防污片確認該印字,基材較佳為透明。 例如,為了對於保護膜形成用複合片中的保護膜形成用膜或貼附於半導體晶圓的內面之保護膜形成用膜或保護膜經由防污片進行光學檢查,基材較佳為透明。The substrate may be transparent or opaque, and may be colored according to the purpose, and other layers may be vapor-deposited. For example, when the film for forming a protective film has energy ray curability, it is preferable that the base material transmits energy ray. For example, in order to perform laser printing on a protective film forming film or protective film attached to the inner surface of a semiconductor wafer, in order to confirm the printing through an antifouling sheet, the base material is preferably transparent. For example, in order to optically inspect the protective film formation film in the protective film formation composite sheet or the protective film formation film or the protective film attached to the inner surface of the semiconductor wafer through the antifouling sheet, the base material is preferably transparent .

為了提高基材與設置於該基材上之層(例如,黏著劑層、保護膜形成用膜、或前述其他層)之接著性,亦可對基材表面實施利用噴砂處理、溶劑處理等之凹凸化處理;電暈放電處理、電子束照射處理、電漿處理、臭氧/紫外線照射處理、火焰處理、鉻酸處理、熱風處理等氧化處理等;親油處理;親水處理等。另外,亦可對基材表面實施底塗處理。In order to improve the adhesion between the substrate and the layer provided on the substrate (for example, the adhesive layer, the film for forming a protective film, or the aforementioned other layers), the surface of the substrate may be subjected to sandblasting, solvent treatment, etc. Concave-convex treatment; corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone/ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments; lipophilic treatment; hydrophilic treatment, etc. In addition, a primer treatment may be applied to the surface of the substrate.

基材可利用公知的方法進行製造。例如,含有樹脂之基材可藉由將含有前述樹脂之樹脂組成物成形而進行製造。The base material can be manufactured by a known method. For example, a resin-containing substrate can be manufactured by molding a resin composition containing the aforementioned resin.

○黏著劑層 前述黏著劑層為片狀或膜狀,含有黏著劑。 作為前述黏著劑,例如可列舉:丙烯酸樹脂、胺基甲酸酯樹脂、橡膠系樹脂、聚矽氧樹脂、環氧系樹脂、聚乙烯醚、聚碳酸酯、酯系樹脂等黏著性樹脂,較佳為丙烯酸樹脂。○Adhesive layer The aforementioned adhesive layer is in the form of a sheet or film and contains an adhesive. Examples of the aforementioned adhesives include adhesive resins such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins. It is preferably an acrylic resin.

此外,本說明書中,「黏著性樹脂」包括具有黏著性之樹脂及具有接著性之樹脂兩者。例如,前述黏著性樹脂不僅包括樹脂本身具有黏著性之樹脂,亦包括藉由與添加劑等其他成分併用而顯示黏著性之樹脂、及藉由存在熱或水等觸發(trigger)而顯示接著性之樹脂等。In addition, in this specification, "adhesive resin" includes both adhesive resin and adhesive resin. For example, the aforementioned adhesive resins include not only resins with adhesive properties, but also resins that exhibit adhesiveness by being used in combination with other ingredients such as additives, and those that exhibit adhesiveness by the presence of heat or water as a trigger. Resin etc.

黏著劑層可由1層(單層)所構成,亦可由2層以上之多層所構成,於由多層所構成之情形時,這些多層相互可相同亦可不同,這些多層的組合並無特別限定。The adhesive layer may be composed of one layer (single layer) or two or more layers. In the case of being composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

黏著劑層的厚度較佳為1μm至100μm,更佳為1μm至60μm,尤佳為1μm至30μm。 此處,所謂「黏著劑層的厚度」,意指黏著劑層整體的厚度,例如所謂由多層所構成之黏著劑層的厚度,意指構成黏著劑層之全部層的合計厚度。The thickness of the adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, and particularly preferably 1 μm to 30 μm. Here, the "thickness of the adhesive layer" means the thickness of the entire adhesive layer. For example, the thickness of the adhesive layer composed of multiple layers means the total thickness of all layers constituting the adhesive layer.

黏著劑層可為透明,亦可為不透明,還可根據目的而著色。 例如,於保護膜形成用膜具有能量線硬化性之情形時,黏著劑層較佳為使能量線透過。 例如,對貼附於半導體晶圓的內面之保護膜形成用膜或保護膜實施雷射印字,為了經由防污片確認該印字,黏著劑層較佳為透明。 例如,為了將保護膜形成用複合片中的保護膜形成用膜或貼附於半導體晶圓的內面之保護膜形成用膜或保護膜經由防污片進行光學檢查,黏著劑層較佳為透明。The adhesive layer may be transparent or opaque, and may be colored according to the purpose. For example, when the film for forming a protective film has energy ray curability, the adhesive layer preferably allows the energy ray to pass through. For example, in order to perform laser printing on a protective film forming film or protective film attached to the inner surface of a semiconductor wafer, in order to confirm the printing through the antifouling sheet, the adhesive layer is preferably transparent. For example, in order to optically inspect the protective film forming film in the protective film forming composite sheet or the protective film forming film or the protective film attached to the inner surface of the semiconductor wafer through the antifouling sheet, the adhesive layer is preferably Transparent.

黏著劑層可使用能量線硬化性黏著劑而形成,亦可使用非能量線硬化性黏著劑而形成。亦即,黏著劑層可為能量線硬化性及非能量線硬化性之任一種。能量線硬化性之黏著劑層能夠容易地調節硬化前及硬化後的物性。The adhesive layer can be formed using an energy ray-curable adhesive or may be formed using a non-energy ray-curing adhesive. That is, the adhesive layer may be either energy ray curable or non-energy ray curable. The energy-ray curable adhesive layer can easily adjust the physical properties before and after curing.

[黏著劑組成物] 黏著劑層可使用含有黏著劑之黏著劑組成物而形成。例如,於黏著劑層之形成對象面塗敷黏著劑組成物,視需要使之乾燥,藉此能夠於目標部位形成黏著劑層。黏著劑組成物中的常溫下不會氣化的成分彼此的含量之比率通常與黏著劑層中的前述成分彼此的含量之比率相同。本說明書中,所謂「常溫」,意指不特別冷或特別熱的溫度,亦即平常的溫度,例如可列舉15℃至25℃之溫度等。 黏著劑層的更具體的形成方法將與其他層的形成方法一起於後文詳細地進行說明。[Adhesive composition] The adhesive layer can be formed using an adhesive composition containing an adhesive. For example, the adhesive composition is coated on the surface to be formed of the adhesive layer, and dried as necessary, thereby forming the adhesive layer on the target site. The ratio of the contents of the components that do not vaporize at room temperature in the adhesive composition is usually the same as the ratio of the contents of the aforementioned components in the adhesive layer. In this specification, the "normal temperature" means a temperature that is not particularly cold or particularly hot, that is, a normal temperature, and for example, a temperature of 15°C to 25°C, etc. can be mentioned. A more specific method of forming the adhesive layer will be described in detail later together with the method of forming other layers.

利用公知的方法塗敷黏著劑組成物即可,例如可列舉使用以下各種塗佈機之方法:氣刀塗佈機、刮刀塗佈機、棒式塗佈機、凹版塗佈機、輥式塗佈機、輥刀塗佈機、簾幕式塗佈機、模具塗佈機、刀式塗佈機、網版塗佈機、Meyer棒式塗佈機、輕觸式塗佈機等。The adhesive composition can be applied by a known method. For example, methods using the following various coaters can be cited: air knife coater, knife coater, bar coater, gravure coater, roll coater Cloth machine, roll knife coater, curtain coater, die coater, knife coater, screen coater, Meyer bar coater, touch coater, etc.

於基材上設置黏著劑層之情形時,例如於基材上塗敷黏著劑組成物,視需要使之乾燥,藉此於基材上積層黏著劑層即可。另外,於基材上設置黏著劑層之情形時,例如亦可藉由下述方式於基材上積層黏著劑層:於剝離膜上塗敷黏著劑組成物,視需要使之乾燥,藉此於剝離膜上預先形成黏著劑層,使該黏著劑層的露出面與基材的一表面貼合。該情形時的剝離膜於保護膜形成用複合片之製造過程或使用過程之任意時機移除即可。When the adhesive layer is provided on the substrate, for example, the adhesive composition is coated on the substrate and dried if necessary, thereby laminating the adhesive layer on the substrate. In addition, when the adhesive layer is provided on the substrate, for example, the adhesive layer can also be laminated on the substrate by applying the adhesive composition on the release film, and drying it if necessary, thereby An adhesive layer is formed in advance on the release film, and the exposed surface of the adhesive layer is attached to a surface of the substrate. In this case, the release film may be removed at any timing during the manufacturing process or the use process of the composite sheet for forming a protective film.

黏著劑組成物的乾燥條件並無特別限定,於黏著劑組成物含有後述溶媒之情形時,較佳為進行加熱乾燥。並且,含有溶媒之黏著劑組成物例如較佳為於70℃至130℃且10秒至5分鐘之條件下進行乾燥。The drying conditions of the adhesive composition are not particularly limited, and when the adhesive composition contains a solvent described later, it is preferable to heat and dry. In addition, the adhesive composition containing the solvent is preferably dried under the conditions of 70°C to 130°C and 10 seconds to 5 minutes, for example.

於黏著劑層為能量線硬化性之情形時,作為含有能量線硬化性黏著劑之黏著劑組成物、亦即能量線硬化性之黏著劑組成物,例如可列舉以下之黏著劑組成物等:黏著劑組成物(I-1),含有非能量線硬化性之黏著性樹脂(I-1a)(以下,有時簡稱為「黏著性樹脂(I-1a)」)及能量線硬化性化合物;黏著劑組成物(I-2),含有於非能量線硬化性之黏著性樹脂(I-1a)的側鏈導入有不飽和基之能量線硬化性之黏著性樹脂(I-2a)(以下,有時簡稱為「黏著性樹脂(I-2a)」);黏著劑組成物(I-3),含有前述黏著性樹脂(I-2a)及能量線硬化性化合物。When the adhesive layer is energy ray curable, as an adhesive composition containing an energy ray curable adhesive, that is, an energy ray curable adhesive composition, for example, the following adhesive compositions can be cited: The adhesive composition (I-1) contains a non-energy-ray curable adhesive resin (I-1a) (hereinafter, sometimes referred to as "adhesive resin (I-1a)") and an energy-ray curable compound; The adhesive composition (I-2) is contained in the side chain of the non-energy-ray-curable adhesive resin (I-1a). The side chain of the unsaturated group is introduced into the energy-ray-curable adhesive resin (I-2a) (below , Sometimes simply referred to as "adhesive resin (I-2a)"); adhesive composition (I-3) contains the aforementioned adhesive resin (I-2a) and an energy ray curable compound.

[黏著劑組成物(I-1)] 前述黏著劑組成物(I-1)如上所述含有非能量線硬化性之黏著性樹脂(I-1a)及能量線硬化性化合物。[Adhesive composition (I-1)] The aforementioned adhesive composition (I-1) contains a non-energy-ray curable adhesive resin (I-1a) and an energy-ray curable compound as described above.

[黏著性樹脂(I-1a)] 前述黏著性樹脂(I-1a)較佳為丙烯酸樹脂。 作為前述丙烯酸樹脂,例如可列舉至少具有源自(甲基)丙烯酸烷基酯之構成單元之丙烯酸聚合物。 前述丙烯酸樹脂所具有之構成單元可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。[Adhesive resin (I-1a)] The aforementioned adhesive resin (I-1a) is preferably an acrylic resin. As said acrylic resin, the acrylic polymer which has at least the structural unit derived from the alkyl (meth)acrylate is mentioned, for example. The structural unit possessed by the aforementioned acrylic resin may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

作為前述(甲基)丙烯酸烷基酯,例如可列舉構成烷基酯之烷基的碳數為1至20之(甲基)丙烯酸烷基酯,前述烷基較佳為直鏈狀或支鏈狀。 作為(甲基)丙烯酸烷基酯,更具體而言,可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯((甲基)丙烯酸月桂酯)、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯((甲基)丙烯酸肉豆蔻酯)、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯((甲基)丙烯酸棕櫚酯)、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯((甲基)丙烯酸硬脂酯)、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等。Examples of the aforementioned alkyl (meth)acrylate include alkyl (meth)acrylates having 1 to 20 carbon atoms in the alkyl group constituting the alkyl ester, and the aforementioned alkyl group is preferably linear or branched. shape. As the alkyl (meth)acrylate, more specifically, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate Ester, n-butyl (meth)acrylate, isobutyl (meth)acrylate, second butyl (meth)acrylate, tertiary butyl (meth)acrylate, amyl (meth)acrylate, (meth)acrylate Base) hexyl acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-octyl (meth)acrylate Nonyl ester, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate) , Tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, ten (meth)acrylate Hexaalkyl ester (palmityl (meth)acrylate), heptadecyl (meth)acrylate, stearyl (meth)acrylate (stearyl (meth)acrylate), (meth) Nonadecyl acrylate, eicosyl (meth)acrylate, etc.

就黏著劑層的黏著力提高之方面而言,前述丙烯酸聚合物較佳為具有源自前述烷基的碳數為4以上之(甲基)丙烯酸烷基酯之構成單元。並且,就黏著劑層的黏著力進一步提高之方面而言,前述烷基的碳數較佳為4至12,更佳為4至8。另外,前述烷基的碳數為4以上之(甲基)丙烯酸烷基酯較佳為丙烯酸烷基酯。In terms of improving the adhesive force of the adhesive layer, the acrylic polymer preferably has a structural unit derived from the alkyl (meth)acrylate alkyl ester having a carbon number of 4 or more. In addition, in terms of further improving the adhesive force of the adhesive layer, the carbon number of the aforementioned alkyl group is preferably 4-12, more preferably 4-8. In addition, the alkyl (meth)acrylate whose alkyl group has 4 or more carbon atoms is preferably an alkyl acrylate.

前述丙烯酸聚合物較佳為除源自(甲基)丙烯酸烷基酯之構成單元以外,進而具有源自含官能基之單體之構成單元。 作為前述含官能基之單體,例如可列舉以下之單體:藉由前述官能基與後述之交聯劑反應而成為交聯的起點,或者藉由前述官能基與後述之含不飽和基之化合物中的不飽和基反應,而能夠於丙烯酸聚合物的側鏈導入不飽和基。The aforementioned acrylic polymer preferably has a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate. As the aforementioned functional group-containing monomer, for example, the following monomers are exemplified: the aforementioned functional group reacts with the crosslinking agent described later to become the starting point of crosslinking, or the aforementioned functional group reacts with the following unsaturated group-containing monomer. The unsaturated group in the compound reacts, and the unsaturated group can be introduced into the side chain of the acrylic polymer.

作為含官能基之單體中的前述官能基,例如可列舉:羥基、羧基、胺基、環氧基等。 亦即,作為含官能基之單體,例如可列舉:含羥基之單體、含羧基之單體、含胺基之單體、含環氧基之單體等。Examples of the functional group in the functional group-containing monomer include a hydroxyl group, a carboxyl group, an amino group, and an epoxy group. That is, as a monomer containing a functional group, for example, a monomer containing a hydroxyl group, a monomer containing a carboxyl group, a monomer containing an amine group, a monomer containing an epoxy group, and the like can be cited.

作為前述含羥基之單體,例如可列舉:(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等(甲基)丙烯酸羥基烷基酯;乙烯醇、烯丙醇等非(甲基)丙烯酸不飽和醇(不具有(甲基)丙烯醯基骨架之不飽和醇)等。Examples of the hydroxyl-containing monomer include: hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate Hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate and other hydroxyalkyl (meth)acrylates; vinyl alcohol, Allyl alcohol and other non-(meth)acrylic unsaturated alcohols (unsaturated alcohols without (meth)acrylic acid skeleton), etc.

作為前述含羧基之單體,例如可列舉:(甲基)丙烯酸、丁烯酸等乙烯性不飽和單羧酸(具有乙烯性不飽和鍵之單羧酸);富馬酸、衣康酸、馬來酸、檸康酸等乙烯性不飽和二羧酸(具有乙烯性不飽和鍵之二羧酸);前述乙烯性不飽和二羧酸之酐;甲基丙烯酸2-羧基乙酯等(甲基)丙烯酸羧基烷基酯等。Examples of the aforementioned carboxyl group-containing monomer include: ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having ethylenically unsaturated bonds) such as (meth)acrylic acid and crotonic acid; fumaric acid, itaconic acid, Maleic acid, citraconic acid and other ethylenically unsaturated dicarboxylic acids (dicarboxylic acids with ethylenically unsaturated bonds); the anhydrides of the aforementioned ethylenically unsaturated dicarboxylic acids; 2-carboxyethyl methacrylate, etc. (formula Group) carboxyalkyl acrylate and the like.

含官能基之單體較佳為含羥基之單體、含羧基之單體,更佳為含羥基之單體。The functional group-containing monomer is preferably a hydroxyl group-containing monomer or a carboxyl group-containing monomer, and more preferably a hydroxyl group-containing monomer.

構成前述丙烯酸聚合物之含官能基之單體可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The functional group-containing monomer constituting the aforementioned acrylic polymer may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述丙烯酸聚合物中,源自含官能基之單體之構成單元的含量相對於構成單元的總量,較佳為1質量%至35質量%,更佳為2質量%至32質量%,尤佳為3質量%至30質量%。In the aforementioned acrylic polymer, the content of the structural unit derived from the functional group-containing monomer relative to the total amount of the structural unit is preferably 1% to 35% by mass, more preferably 2% to 32% by mass, especially Preferably, it is 3% by mass to 30% by mass.

前述丙烯酸聚合物亦可除源自(甲基)丙烯酸烷基酯之構成單元、及源自含官能基之單體之構成單元以外,進而具有源自其他單體之構成單元。 前述其他單體只要可與(甲基)丙烯酸烷基酯等共聚,則並無特別限定。 作為前述其他單體,例如可列舉:苯乙烯、α-甲基苯乙烯、乙烯基甲苯、甲酸乙烯酯、乙酸乙烯酯、丙烯腈、丙烯醯胺等。The aforementioned acrylic polymer may have structural units derived from other monomers in addition to structural units derived from alkyl (meth)acrylates and functional group-containing monomers. The aforementioned other monomers are not particularly limited as long as they can be copolymerized with alkyl (meth)acrylates and the like. Examples of the aforementioned other monomers include styrene, α-methylstyrene, vinyl toluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide, and the like.

構成前述丙烯酸聚合物之前述其他單體可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned other monomers constituting the aforementioned acrylic polymer may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述丙烯酸聚合物可用作上述之非能量線硬化性之黏著性樹脂(I-1a)。 另一方面,使前述丙烯酸聚合物中的官能基與具有能量線聚合性不飽和基(能量線聚合性基)之含不飽和基之化合物反應而成之樹脂可用作上述之能量線硬化性之黏著性樹脂(I-2a)。The aforementioned acrylic polymer can be used as the aforementioned non-energy-ray-curable adhesive resin (I-1a). On the other hand, a resin obtained by reacting a functional group in the aforementioned acrylic polymer with an unsaturated group-containing compound having an energy-ray polymerizable unsaturated group (energy-ray polymerizable group) can be used as the aforementioned energy-ray curable property The adhesive resin (I-2a).

黏著劑組成物(I-1)所含有之黏著性樹脂(I-1a)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The adhesive composition (I-1) contains only one type of adhesive resin (I-1a), or two or more types. In the case of two or more types, the combination and ratio of these can be arbitrarily selected .

黏著劑組成物(I-1)中,黏著性樹脂(I-1a)的含量相對於黏著劑組成物(I-1)的總質量之比例較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為15質量%至90質量%。In the adhesive composition (I-1), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-1) is preferably 5 to 99% by mass, more preferably It is 10% by mass to 95% by mass, and more preferably 15% by mass to 90% by mass.

[能量線硬化性化合物] 作為黏著劑組成物(I-1)所含有之前述能量線硬化性化合物,可列舉:具有能量線聚合性不飽和基且可藉由照射能量線而硬化之單體或低聚物。 能量線硬化性化合物中,作為單體,例如可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇(甲基)丙烯酸酯等多元(甲基)丙烯酸酯;(甲基)丙烯酸胺基甲酸酯;聚酯(甲基)丙烯酸酯;聚醚(甲基)丙烯酸酯;環氧(甲基)丙烯酸酯等。 能量線硬化性化合物中,作為低聚物,例如可列舉上述例示之單體聚合而成之低聚物等。 就分子量相對較大、不易使黏著劑層的儲存彈性模數降低之方面而言,能量線硬化性化合物較佳為(甲基)丙烯酸胺基甲酸酯、(甲基)丙烯酸胺基甲酸酯低聚物。[Energy ray hardening compound] Examples of the aforementioned energy ray curable compound contained in the adhesive composition (I-1) include monomers or oligomers that have an energy ray polymerizable unsaturated group and can be cured by energy ray irradiation. Among the energy ray curable compounds, examples of monomers include trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, (Meth)acrylate such as acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate, etc.; (meth)acrylic amine methyl Acid ester; polyester (meth)acrylate; polyether (meth)acrylate; epoxy (meth)acrylate, etc. Among the energy ray curable compounds, examples of the oligomer include oligomers obtained by polymerizing the monomers exemplified above. In terms of relatively large molecular weight and difficult to reduce the storage elastic modulus of the adhesive layer, the energy ray curable compound is preferably (meth)acrylate urethane, (meth)acrylate urethane formic acid Ester oligomers.

黏著劑組成物(I-1)所含有之前述能量線硬化性化合物可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned energy ray curable compound contained in the adhesive composition (I-1) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these can be arbitrarily selected.

前述黏著劑組成物(I-1)中,前述能量線硬化性化合物的含量相對於黏著劑組成物(I-1)的總質量之比例較佳為1質量%至95質量%,更佳為5質量%至90質量%,尤佳為10質量%至85質量%。In the aforementioned adhesive composition (I-1), the ratio of the content of the aforementioned energy ray curable compound to the total mass of the adhesive composition (I-1) is preferably 1% to 95% by mass, more preferably 5 mass% to 90 mass%, particularly preferably 10 mass% to 85% by mass.

[交聯劑] 於使用除源自(甲基)丙烯酸烷基酯之構成單元以外,進而具有源自含官能基之單體之構成單元之前述丙烯酸聚合物作為黏著性樹脂(I-1a)之情形時,黏著劑組成物(I-1)較佳為進而含有交聯劑。[Crosslinking agent] When using the aforementioned acrylic polymer having a functional group-containing monomer-derived structural unit in addition to the structural unit derived from the alkyl (meth)acrylate as the adhesive resin (I-1a), adhesion The agent composition (I-1) preferably further contains a crosslinking agent.

前述交聯劑例如與前述官能基反應而使黏著性樹脂(I-1a)彼此交聯。 作為交聯劑,例如可列舉:甲苯二異氰酸酯、六亞甲基二異氰酸酯、苯二甲基二異氰酸酯、這些二異氰酸酯之加合物等異氰酸酯系交聯劑(具有異氰酸酯基之交聯劑);乙二醇縮水甘油醚等環氧系交聯劑(具有縮水甘油基之交聯劑);六[1-(2-甲基)-氮丙啶基]三磷醯基三嗪等氮丙啶系交聯劑(具有氮丙啶基之交聯劑);鋁螯合物等金屬螯合物系交聯劑(具有金屬螯合物結構之交聯劑);異氰脲酸酯系交聯劑(具有異氰脲酸骨架之交聯劑)等。 就使黏著劑的凝聚力提高而使黏著劑層的黏著力提高之方面、及獲取容易等方面而言,交聯劑較佳為異氰酸酯系交聯劑。The crosslinking agent reacts with the functional group, for example, to crosslink the adhesive resins (I-1a). Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having isocyanate groups) such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; Epoxy crosslinking agents such as ethylene glycol glycidyl ether (crosslinking agents with glycidyl groups); aziridines such as hexa[1-(2-methyl)-aziridinyl] triphosphoryl triazine Crosslinking agent (crosslinking agent with aziridin group); metal chelate crosslinking agent such as aluminum chelate (crosslinking agent with metal chelate structure); isocyanurate crosslinking agent Agent (crosslinking agent with isocyanuric acid skeleton) and so on. The cross-linking agent is preferably an isocyanate-based cross-linking agent in terms of improving the cohesive force of the adhesive and improving the adhesive force of the adhesive layer, and ease of availability.

黏著劑組成物(I-1)所含有之交聯劑可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The crosslinking agent contained in the adhesive composition (I-1) may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述黏著劑組成物(I-1)中,交聯劑的含量相對於黏著性樹脂(I-1a)的含量100質量份,較佳為0.01質量份至50質量份,更佳為0.1質量份至20質量份,尤佳為0.3質量份至15質量份。In the aforementioned adhesive composition (I-1), the content of the crosslinking agent relative to the content of the adhesive resin (I-1a) is 100 parts by mass, preferably 0.01 parts by mass to 50 parts by mass, more preferably 0.1 parts by mass It is 20 parts by mass, particularly preferably 0.3 parts by mass to 15 parts by mass.

[光聚合起始劑] 黏著劑組成物(I-1)亦可進而含有光聚合起始劑。含有光聚合起始劑之黏著劑組成物(I-1)即便照射紫外線等相對較低能量的能量線,硬化反應亦充分地進行。[Photopolymerization initiator] The adhesive composition (I-1) may further contain a photopolymerization initiator. Even if the adhesive composition (I-1) containing a photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction proceeds sufficiently.

作為前述光聚合起始劑,例如可列舉:安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香二甲基縮酮等安息香化合物;苯乙酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯乙酮化合物;雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等醯基氧化膦化合物;苄基苯基硫醚、一硫化四甲基秋蘭姆等硫醚化合物;1-羥基環己基苯基酮等α-酮醇化合物;偶氮雙異丁腈等偶氮化合物;二茂鈦等二茂鈦化合物;噻噸酮等噻噸酮化合物;過氧化物化合物;二乙醯等二酮化合物;苯偶醯;二苯偶醯;二苯甲酮;2,4-二乙基噻噸酮;1,2-二苯基甲烷;2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮;2-氯蒽醌等。 另外,作為前述光聚合起始劑,例如亦可使用1-氯蒽醌等醌化合物;胺等光增感劑等。Examples of the aforementioned photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal. ; Acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, etc. Ketone compounds; bis(2,4,6-trimethylbenzyl)phenyl phosphine oxide, 2,4,6-trimethylbenzyl diphenyl phosphine oxide and other phosphine oxide compounds; benzyl Sulfide compounds such as phenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; Titanocene compounds; thioxanthone compounds such as thioxanthone; peroxide compounds; diacetone compounds such as diacetin; benzophenone; benzophenone; benzophenone; 2,4-diethylthioxanthone ; 1,2-Diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl] acetone; 2-chloroanthraquinone and the like. In addition, as the aforementioned photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, and the like can also be used.

黏著劑組成物(I-1)所含有之光聚合起始劑可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The photopolymerization initiator contained in the adhesive composition (I-1) may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

黏著劑組成物(I-1)中,光聚合起始劑的含量相對於前述能量線硬化性化合物的含量100質量份,較佳為0.01質量份至20質量份,更佳為0.03質量份至10質量份,尤佳為0.05質量份至5質量份。In the adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass, and more preferably 0.03 to 20 parts by mass relative to the content of the aforementioned energy ray curable compound 100 parts by mass 10 parts by mass, particularly preferably 0.05 to 5 parts by mass.

[其他添加劑] 黏著劑組成物(I-1)亦可在無損本發明的效果之範圍內,含有不相當於上述任一種成分之其他添加劑。 作為前述其他添加劑,例如可列舉:抗靜電劑、抗氧化劑、軟化劑(塑化劑)、填充材料(填料)、防鏽劑、著色劑(顏料、染料)、增感劑、黏著賦予劑、反應延遲劑、交聯促進劑(觸媒)、層間轉移抑制劑等公知的添加劑。[Other additives] The adhesive composition (I-1) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effects of the present invention. Examples of the aforementioned other additives include: antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, adhesion-imparting agents, Known additives such as reaction delay agents, crosslinking accelerators (catalysts), and interlayer transfer inhibitors.

此外,所謂反應延遲劑,例如係指用以抑制因混入至黏著劑組成物(I-1)中之觸媒的作用,而導致保存中的黏著劑組成物(I-1)中進行不預期的交聯反應之成分。作為反應延遲劑,例如可列舉藉由針對觸媒之螯合物而形成螯合物錯合物之化合物,更具體而言,可列舉於1分子中具有2個以上之羰基(-C(=O)-)之化合物。 另外,作為層間轉移抑制劑,例如係用以抑制保護膜形成用膜等與黏著劑層鄰接之層中所含有之成分朝黏著劑層轉移之成分。作為層間轉移抑制劑,可列舉與轉移抑制對象相同的成分,例如於轉移抑制對象為保護膜形成用膜中的環氧樹脂之情形時,可使用同種的環氧樹脂。In addition, the so-called reaction delay agent means, for example, to prevent the effect of the catalyst mixed in the adhesive composition (I-1) from causing unexpected progress in the adhesive composition (I-1) during storage. The component of the cross-linking reaction. As the reaction delay agent, for example, a compound that forms a chelate complex by a chelate against a catalyst can be cited, and more specifically, a compound having two or more carbonyl groups (-C(= O)-) Compounds. In addition, as the interlayer transfer inhibitor, for example, a component for suppressing the transfer of a component contained in a layer adjacent to the adhesive layer, such as a film for forming a protective film, to the adhesive layer. As the interlayer transfer inhibitor, the same component as the target of the transfer inhibition can be cited. For example, when the target of the transfer inhibition is the epoxy resin in the film for forming a protective film, the same kind of epoxy resin can be used.

黏著劑組成物(I-1)所含有之其他添加劑可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The other additives contained in the adhesive composition (I-1) may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

黏著劑組成物(I-1)中的其他添加劑的含量並無特別限定,根據該其他添加劑的種類適宜選擇即可。The content of the other additives in the adhesive composition (I-1) is not particularly limited, and may be appropriately selected according to the type of the other additives.

[溶媒] 黏著劑組成物(I-1)亦可含有溶媒。黏著劑組成物(I-1)藉由含有溶媒,可提高對塗敷對象面之塗敷適性。[Solvent] The adhesive composition (I-1) may also contain a solvent. By containing a solvent, the adhesive composition (I-1) can improve the coating suitability to the surface to be coated.

前述溶媒較佳為有機溶媒,作為前述有機溶媒,例如可列舉:甲基乙基酮、丙酮等酮;乙酸乙酯等酯(羧酸酯);四氫呋喃、二噁烷等醚;環己烷、正己烷等脂肪族烴;甲苯、二甲苯等芳香族烴;1-丙醇、2-丙醇等醇等。The aforementioned solvent is preferably an organic solvent. Examples of the aforementioned organic solvent include: ketones such as methyl ethyl ketone and acetone; esters (carboxylic acid esters) such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; cyclohexane, Aliphatic hydrocarbons such as n-hexane; aromatic hydrocarbons such as toluene and xylene; alcohols such as 1-propanol and 2-propanol.

作為前述溶媒,例如可不將黏著性樹脂(I-1a)之製造時所使用之溶媒自黏著性樹脂(I-1a)去除而直接用於黏著劑組成物(I-1),亦可於黏著劑組成物(I-1)之製造時另行添加與黏著性樹脂(I-1a)之製造時所使用之溶媒相同或不同種類的溶媒。As the aforementioned solvent, for example, the solvent used in the production of the adhesive resin (I-1a) can be directly used in the adhesive composition (I-1) without removing the solvent used in the production of the adhesive resin (I-1a), or it can be used for adhesive During the manufacture of the agent composition (I-1), a solvent of the same or different type as the solvent used in the manufacture of the adhesive resin (I-1a) is separately added.

黏著劑組成物(I-1)所含有之溶媒可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The solvent contained in the adhesive composition (I-1) may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

黏著劑組成物(I-1)中的溶媒的含量並無特別限定,適宜調節即可。The content of the solvent in the adhesive composition (I-1) is not particularly limited, and may be appropriately adjusted.

[黏著劑組成物(I-2)] 前述黏著劑組成物(I-2)如上所述含有於非能量線硬化性之黏著性樹脂(I-1a)的側鏈導入有不飽和基之能量線硬化性之黏著性樹脂(I-2a)。[Adhesive composition (I-2)] The aforementioned adhesive composition (I-2) is contained in the side chain of the non-energy-ray-curable adhesive resin (I-1a) as described above, and the unsaturated group is introduced into the energy-ray-curable adhesive resin (I-2a) ).

[黏著性樹脂(I-2a)] 前述黏著性樹脂(I-2a)例如藉由使黏著性樹脂(I-1a)中的官能基與具有能量線聚合性不飽和基之含不飽和基之化合物反應而獲得。[Adhesive resin (I-2a)] The aforementioned adhesive resin (I-2a) is obtained, for example, by reacting a functional group in the adhesive resin (I-1a) with an unsaturated group-containing compound having an energy-ray polymerizable unsaturated group.

前述含不飽和基之化合物係具有以下之基之化合物:除了具有前述能量線聚合性不飽和基以外,進而具有藉由與黏著性樹脂(I-1a)中的官能基反應而可與黏著性樹脂(I-1a)鍵結之基。 作為前述能量線聚合性不飽和基,例如可列舉:(甲基)丙烯醯基、乙烯基(次乙基)、烯丙基(2-丙烯基)等,較佳為(甲基)丙烯醯基。 作為可與黏著性樹脂(I-1a)中的官能基鍵結之基,例如可列舉:可與羥基或胺基鍵結之異氰酸酯基及縮水甘油基、以及可與羧基或環氧基鍵結之羥基及胺基等。The aforementioned unsaturated group-containing compound is a compound having the following group: in addition to the aforementioned energy ray polymerizable unsaturated group, it also has adhesiveness by reacting with the functional group in the adhesive resin (I-1a) Resin (I-1a) is the bonding base. Examples of the energy ray polymerizable unsaturated group include (meth)acrylic acid group, vinyl (ethylene group), allyl group (2-propenyl group), etc., and (meth)acrylic acid group is preferred. base. Examples of groups that can be bonded to the functional groups in the adhesive resin (I-1a) include: isocyanate groups and glycidyl groups that can be bonded to hydroxyl groups or amino groups, and carboxyl groups or epoxy groups that can be bonded The hydroxyl and amino groups, etc.

作為前述含不飽和基之化合物,例如可列舉:異氰酸(甲基)丙烯醯氧基乙酯、(甲基)丙烯醯基異氰酸酯、(甲基)丙烯酸縮水甘油酯等。Examples of the aforementioned unsaturated group-containing compound include (meth)acryloxyethyl isocyanate, (meth)acryloyl isocyanate, glycidyl (meth)acrylate, and the like.

黏著劑組成物(I-2)所含有之黏著性樹脂(I-2a)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。Adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these can be arbitrarily selected .

黏著劑組成物(I-2)中,黏著性樹脂(I-2a)的含量相對於黏著劑組成物(I-2)的總質量之比例較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為10質量%至90質量%。In the adhesive composition (I-2), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-2) is preferably 5 to 99% by mass, more preferably It is 10% by mass to 95% by mass, particularly preferably 10% by mass to 90% by mass.

[交聯劑] 例如於使用與黏著性樹脂(I-1a)中相同的具有源自含官能基之單體之構成單元之前述丙烯酸聚合物作為黏著性樹脂(I-2a)之情形時,黏著劑組成物(I-2)亦可進而含有交聯劑。[Crosslinking agent] For example, in the case of using the same acrylic polymer as the adhesive resin (I-1a) having a structural unit derived from a functional group-containing monomer as the adhesive resin (I-2a), the adhesive composition ( I-2) may further contain a crosslinking agent.

作為黏著劑組成物(I-2)中的前述交聯劑,可列舉與黏著劑組成物(I-1)中的交聯劑相同的化合物。 黏著劑組成物(I-2)所含有之交聯劑可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。Examples of the crosslinking agent in the adhesive composition (I-2) include the same compounds as the crosslinking agent in the adhesive composition (I-1). The crosslinking agent contained in the adhesive composition (I-2) may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述黏著劑組成物(I-2)中,交聯劑的含量相對於黏著性樹脂(I-2a)的含量100質量份,較佳為0.01質量份至50質量份,更佳為0.1質量份至20質量份,尤佳為0.3至15質量份。In the aforementioned adhesive composition (I-2), the content of the crosslinking agent relative to the content of the adhesive resin (I-2a) is 100 parts by mass, preferably 0.01 parts by mass to 50 parts by mass, more preferably 0.1 parts by mass To 20 parts by mass, particularly preferably 0.3 to 15 parts by mass.

[光聚合起始劑] 黏著劑組成物(I-2)亦可進而含有光聚合起始劑。含有光聚合起始劑之黏著劑組成物(I-2)即便照射紫外線等相對較低能量的能量線,硬化反應亦充分地進行。[Photopolymerization initiator] The adhesive composition (I-2) may further contain a photopolymerization initiator. Even if the adhesive composition (I-2) containing a photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction proceeds sufficiently.

作為黏著劑組成物(I-2)中的前述光聚合起始劑,可列舉與黏著劑組成物(I-1)中的光聚合起始劑相同的化合物。 黏著劑組成物(I-2)所含有之光聚合起始劑可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。Examples of the photopolymerization initiator in the adhesive composition (I-2) include the same compounds as the photopolymerization initiator in the adhesive composition (I-1). The photopolymerization initiator contained in the adhesive composition (I-2) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these can be arbitrarily selected.

黏著劑組成物(I-2)中,光聚合起始劑的含量相對於黏著性樹脂(I-2a)的含量100質量份,較佳為0.01質量份至20質量份,更佳為0.03質量份至10質量份,尤佳為0.05至5質量份。In the adhesive composition (I-2), the content of the photopolymerization initiator relative to the content of the adhesive resin (I-2a) is 100 parts by mass, preferably 0.01 to 20 parts by mass, more preferably 0.03 parts by mass Parts to 10 parts by mass, more preferably 0.05 to 5 parts by mass.

[其他添加劑、溶媒] 黏著劑組成物(I-2)亦可在無損本發明的效果之範圍內,含有不相當於上述任一種成分之其他添加劑。 另外,黏著劑組成物(I-2)亦可以與黏著劑組成物(I-1)之情形同樣的目的而含有溶媒。 作為黏著劑組成物(I-2)中的前述其他添加劑及溶媒,分別可列舉與黏著劑組成物(I-1)中的其他添加劑及溶媒相同的化合物。 黏著劑組成物(I-2)所含有之其他添加劑及溶媒分別可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。 黏著劑組成物(I-2)中的其他添加劑及溶媒的含量分別無特別限定,根據該其他添加劑及溶媒的種類適宜選擇即可。[Other additives, solvents] The adhesive composition (I-2) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effects of the present invention. In addition, the adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-2), the same compounds as the other additives and solvents in the adhesive composition (I-1) can be cited, respectively. The other additives and solvents contained in the adhesive composition (I-2) may each be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected. The content of the other additives and the solvent in the adhesive composition (I-2) is not particularly limited, and may be appropriately selected according to the types of the other additives and the solvent.

[黏著劑組成物(I-3)] 前述黏著劑組成物(I-3)如上所述含有前述黏著性樹脂(I-2a)及能量線硬化性化合物。[Adhesive composition (I-3)] The adhesive composition (I-3) contains the adhesive resin (I-2a) and the energy ray curable compound as described above.

黏著劑組成物(I-3)中,黏著性樹脂(I-2a)的含量相對於黏著劑組成物(I-3)的總質量之比例較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為15質量%至90質量%。In the adhesive composition (I-3), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-3) is preferably 5 to 99% by mass, more preferably It is 10% by mass to 95% by mass, and more preferably 15% by mass to 90% by mass.

[能量線硬化性化合物] 作為黏著劑組成物(I-3)所含有之前述能量線硬化性化合物,可列舉:具有能量線聚合性不飽和基且可藉由照射能量線而硬化之單體及低聚物,可列舉與黏著劑組成物(I-1)所含有之能量線硬化性化合物相同的化合物。 黏著劑組成物(I-3)所含有之前述能量線硬化性化合物可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。[Energy ray hardening compound] Examples of the aforementioned energy-ray curable compound contained in the adhesive composition (I-3) include monomers and oligomers that have an energy-ray polymerizable unsaturated group and can be cured by irradiation with energy rays, including The same compound as the energy ray curable compound contained in the adhesive composition (I-1). The aforementioned energy ray curable compound contained in the adhesive composition (I-3) may be only one type, or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述黏著劑組成物(I-3)中,前述能量線硬化性化合物的含量相對於黏著性樹脂(I-2a)的含量100質量份,較佳為0.01質量份至300質量份,更佳為0.03質量份至200質量份,尤佳為0.05質量份至100質量份。In the aforementioned adhesive composition (I-3), the content of the aforementioned energy ray curable compound relative to the content of the adhesive resin (I-2a) is 100 parts by mass, preferably 0.01 to 300 parts by mass, more preferably 0.03 parts by mass to 200 parts by mass, particularly preferably 0.05 parts by mass to 100 parts by mass.

[光聚合起始劑] 黏著劑組成物(I-3)亦可進而含有光聚合起始劑。含有光聚合起始劑之黏著劑組成物(I-3)即便照射紫外線等相對較低能量的能量線,硬化反應亦充分地進行。[Photopolymerization initiator] The adhesive composition (I-3) may further contain a photopolymerization initiator. Even if the adhesive composition (I-3) containing a photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction proceeds sufficiently.

作為黏著劑組成物(I-3)中的前述光聚合起始劑,可列舉與黏著劑組成物(I-1)中的光聚合起始劑相同的化合物。 黏著劑組成物(I-3)所含有之光聚合起始劑可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。Examples of the photopolymerization initiator in the adhesive composition (I-3) include the same compounds as the photopolymerization initiator in the adhesive composition (I-1). The photopolymerization initiator contained in the adhesive composition (I-3) may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

黏著劑組成物(I-3)中,光聚合起始劑的含量相對於黏著性樹脂(I-2a)及前述能量線硬化性化合物的總含量100質量份,較佳為0.01質量份至20質量份,更佳為0.03質量份至10質量份,尤佳為0.05質量份至5質量份。In the adhesive composition (I-3), the content of the photopolymerization initiator is 100 parts by mass relative to the total content of the adhesive resin (I-2a) and the aforementioned energy ray curable compound, preferably 0.01 to 20 parts by mass Parts by mass, more preferably 0.03 parts by mass to 10 parts by mass, particularly preferably 0.05 parts by mass to 5 parts by mass.

[其他添加劑、溶媒] 黏著劑組成物(I-3)亦可在無損本發明的效果之範圍內,含有不相當於上述任一種成分之其他添加劑。 另外,黏著劑組成物(I-3)亦可以與黏著劑組成物(I-1)之情形同樣的目的而含有溶媒。 作為黏著劑組成物(I-3)中的前述其他添加劑及溶媒,分別可列舉與黏著劑組成物(I-1)中的其他添加劑及溶媒相同的化合物。 黏著劑組成物(I-3)所含有之其他添加劑及溶媒分別可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。 黏著劑組成物(I-3)中的其他添加劑及溶媒的含量分別無特別限定,根據該其他添加劑及溶媒的種類適宜選擇即可。[Other additives, solvents] The adhesive composition (I-3) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effects of the present invention. In addition, the adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-3), the same compounds as the other additives and solvents in the adhesive composition (I-1) can be cited, respectively. The other additives and solvents contained in the adhesive composition (I-3) may be only one type, or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected. The content of the other additives and the solvent in the adhesive composition (I-3) is not particularly limited, and may be appropriately selected according to the types of the other additives and the solvent.

[黏著劑組成物(I-1)至黏著劑組成物(I-3)以外的黏著劑組成物] 前文中主要對黏著劑組成物(I-1)、黏著劑組成物(I-2)及黏著劑組成物(I-3)進行了說明,但作為這些的含有成分所說明之成分亦可同樣地用於這些3種黏著劑組成物以外的所有黏著劑組成物(本說明書中,稱為「黏著劑組成物(I-1)至黏著劑組成物(I-3)以外的黏著劑組成物」)。[Adhesive composition (I-1) to adhesive composition other than adhesive composition (I-3)] In the foregoing, the adhesive composition (I-1), the adhesive composition (I-2), and the adhesive composition (I-3) were mainly described, but the components described as the contained components may be the same. It is used for all adhesive compositions except for these three types of adhesive compositions (in this specification, referred to as "adhesive composition (I-1) to adhesive compositions other than adhesive composition (I-3)) ").

作為黏著劑組成物(I-1)至黏著劑組成物(I-3)以外的黏著劑組成物,除能量線硬化性之黏著劑組成物以外,亦可列舉非能量線硬化性之黏著劑組成物。 作為非能量線硬化性之黏著劑組成物,例如可列舉:含有丙烯酸樹脂、胺基甲酸酯樹脂、橡膠系樹脂、聚矽氧樹脂、環氧系樹脂、聚乙烯醚、聚碳酸酯、酯系樹脂等非能量線硬化性之黏著性樹脂(I-1a)之黏著劑組成物(I-4),較佳為含有丙烯酸樹脂。As the adhesive composition other than the adhesive composition (I-1) to the adhesive composition (I-3), in addition to the energy-ray-curable adhesive composition, non-energy-ray-curable adhesives can also be cited Composition. Examples of non-energy-ray curable adhesive compositions include acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and esters. The adhesive composition (I-4) of a non-energy-ray-curable adhesive resin (I-1a) such as resin preferably contains an acrylic resin.

黏著劑組成物(I-1)至黏著劑組成物(I-3)以外的黏著劑組成物較佳為含有1種或2種以上之交聯劑,該交聯劑的含量可設為與上述之黏著劑組成物(I-1)等情形相同。Adhesive compositions other than the adhesive composition (I-1) to the adhesive composition (I-3) preferably contain one or more crosslinking agents, and the content of the crosslinking agent can be set to The adhesive composition (I-1) mentioned above is the same.

[黏著劑組成物(I-4)] 作為較佳的黏著劑組成物(I-4),例如可列舉含有前述黏著性樹脂(I-1a)及交聯劑之黏著劑組成物。[Adhesive composition (I-4)] As a preferable adhesive composition (I-4), the adhesive composition containing the said adhesive resin (I-1a) and a crosslinking agent is mentioned, for example.

[黏著性樹脂(I-1a)] 作為黏著劑組成物(I-4)中的黏著性樹脂(I-1a),可列舉與黏著劑組成物(I-1)中的黏著性樹脂(I-1a)相同的黏著性樹脂。 黏著劑組成物(I-4)所含有之黏著性樹脂(I-1a)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。[Adhesive resin (I-1a)] Examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include the same adhesive resins as the adhesive resin (I-1a) in the adhesive composition (I-1). Adhesive resin (I-1a) contained in the adhesive composition (I-4) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these can be arbitrarily selected .

黏著劑組成物(I-4)中,黏著性樹脂(I-1a)的含量相對於黏著劑組成物(I-4)的總質量之比例較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為15質量%至90質量%。In the adhesive composition (I-4), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-4) is preferably 5 to 99% by mass, more preferably It is 10% by mass to 95% by mass, and more preferably 15% by mass to 90% by mass.

[交聯劑] 於使用除了具有源自(甲基)丙烯酸烷基酯之構成單元以外,進而具有源自含官能基之單體之構成單元之前述丙烯酸聚合物作為黏著性樹脂(I-1a)之情形時,黏著劑組成物(I-4)較佳為進而含有交聯劑。[Crosslinking agent] When using the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate as the adhesive resin (I-1a), The adhesive composition (I-4) preferably further contains a crosslinking agent.

作為黏著劑組成物(I-4)中的交聯劑,可列舉與黏著劑組成物(I-1)中的交聯劑相同的化合物。 黏著劑組成物(I-4)所含有之交聯劑可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。Examples of the crosslinking agent in the adhesive composition (I-4) include the same compounds as the crosslinking agent in the adhesive composition (I-1). The crosslinking agent contained in the adhesive composition (I-4) may be only one type or two or more types. When there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述黏著劑組成物(I-4)中,交聯劑的含量相對於黏著性樹脂(I-1a)的含量100質量份,較佳為0.01質量份至50質量份,更佳為0.1質量份至47質量份,尤佳為0.3質量份至44質量份。In the aforementioned adhesive composition (I-4), the content of the crosslinking agent relative to the content of the adhesive resin (I-1a) is 100 parts by mass, preferably 0.01 to 50 parts by mass, more preferably 0.1 part by mass To 47 parts by mass, particularly preferably 0.3 to 44 parts by mass.

[其他添加劑、溶媒] 黏著劑組成物(I-4)亦可在無損本發明的效果之範圍內,含有不相當於上述任一種成分之其他添加劑。 另外,黏著劑組成物(I-4)亦可以與黏著劑組成物(I-1)之情形同樣的目的而含有溶媒。 作為黏著劑組成物(I-4)中的前述其他添加劑及溶媒,分別可列舉與黏著劑組成物(I-1)中的其他添加劑及溶媒相同的化合物。 黏著劑組成物(I-4)所含有之其他添加劑及溶媒分別可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。 黏著劑組成物(I-4)中的其他添加劑及溶媒的含量分別無特別限定,根據該其他添加劑及溶媒的種類適宜選擇即可。[Other additives, solvents] The adhesive composition (I-4) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effects of the present invention. In addition, the adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-4), the same compounds as the other additives and solvents in the adhesive composition (I-1) can be cited, respectively. The other additives and solvents contained in the adhesive composition (I-4) may be only one type, or two or more types, respectively. In the case of two or more types, the combination and ratio of these can be arbitrarily selected. The content of the other additives and the solvent in the adhesive composition (I-4) is not particularly limited, and may be appropriately selected according to the types of the other additives and the solvent.

於後述之保護膜形成用膜為能量線硬化性之情形時,黏著劑層較佳為非能量線硬化性。原因在於,若黏著劑層為能量線硬化性,則無法抑制於藉由照射能量線而使保護膜形成用膜硬化時,黏著劑層亦同時硬化。若黏著劑層與保護膜形成用膜同時硬化,則有時保護膜形成用膜之硬化物及黏著劑層於彼此的界面貼附至無法剝離之程度。該情形時,難以將內面具備保護膜形成用膜之硬化物、亦即保護膜之半導體晶片(亦即,附保護膜之半導體晶片)自具備黏著劑層之硬化物之防污片剝離,變得無法正常拾取附保護膜之半導體晶片。若黏著劑層為非能量線硬化性,則能夠確實地避免此種不良情況,能夠更容易地拾取附保護膜之半導體晶片。When the film for forming a protective film described later is energy ray curable, the adhesive layer is preferably non-energy ray curable. The reason is that if the adhesive layer is energy ray curable, it cannot be suppressed that the adhesive layer is also cured at the same time when the film for forming a protective film is cured by energy ray irradiation. If the adhesive layer and the film for forming a protective film are cured at the same time, the cured product of the film for forming a protective film and the adhesive layer may stick to the interface of each other to the extent that they cannot be peeled off. In this case, it is difficult to peel off the cured product with the protective film forming film on the inner surface, that is, the semiconductor wafer with the protective film (that is, the semiconductor wafer with the protective film) from the antifouling sheet provided with the cured product of the adhesive layer. It becomes impossible to pick up semiconductor wafers with protective films normally. If the adhesive layer is non-energy-ray curable, such a problem can be reliably avoided, and the semiconductor wafer with the protective film can be picked up more easily.

此處對黏著劑層為非能量線硬化性之情形時的效果進行了說明,但即便防污片中之與保護膜形成用膜直接接觸之層為黏著劑層以外的層,只要該層為非能量線硬化性,則亦發揮同樣的效果。The effect when the adhesive layer is non-energy-ray curable is described here, but even if the layer directly in contact with the protective film forming film in the antifouling sheet is a layer other than the adhesive layer, as long as the layer is Non-energy ray hardening also exerts the same effect.

[黏著劑組成物之製造方法] 黏著劑組成物(I-1)至黏著劑組成物(I-3)、或黏著劑組成物(I-4)等黏著劑組成物(I-1)至黏著劑組成物(I-3)以外的黏著劑組成物可藉由調配前述黏著劑、及視需要添加之前述黏著劑以外的成分等用以構成黏著劑組成物之各成分而獲得。 調配各成分時的添加順序並無特別限定,亦可同時添加2種以上之成分。 於使用溶媒之情形時,可將溶媒與溶媒以外的任一種調配成分混合而將該調配成分預先稀釋來使用,或是不將溶媒以外的任一種調配成分預先稀釋而是將溶媒與這些調配成分混合來使用。 調配時混合各成分之方法並無特別限定,自以下之公知的方法中適宜選擇即可:使攪拌子或攪拌翼等旋轉而進行混合之方法;使用混合機進行混合之方法;施加超音波進行混合之方法等。 關於添加及混合各成分時的溫度及時間,只要不使各調配成分劣化,則並無特別限定,適宜調節即可,溫度較佳為15℃至30℃。[Method of manufacturing adhesive composition] Adhesive composition (I-1) to adhesive composition (I-3), or adhesive composition (I-4) and other adhesive composition (I-1) to adhesive composition (I-3) The adhesive composition other than that can be obtained by blending the aforementioned adhesive and components other than the aforementioned adhesive if necessary, etc., to constitute each component of the adhesive composition. The order of addition when preparing each component is not particularly limited, and two or more components may be added at the same time. When using a solvent, you can mix the solvent with any compounding component other than the solvent and dilute the compounding component in advance for use, or you can use the solvent and these compounding components without pre-diluting any compounding component other than the solvent Mix to use. The method of mixing each component during compounding is not particularly limited, and can be appropriately selected from the following well-known methods: a method of rotating a stirrer or a stirring blade, etc. for mixing; a method of mixing using a mixer; applying ultrasonic waves Methods of mixing, etc. The temperature and time when adding and mixing each component are not particularly limited as long as they do not deteriorate each compounding component, and they may be adjusted appropriately, and the temperature is preferably 15°C to 30°C.

◎保護膜形成用膜 前述保護膜形成用膜可為硬化性,亦可為非硬化性。 硬化性之保護膜形成用膜可為熱硬化性及能量線硬化性之任一種,亦可具有熱硬化性及能量線硬化性之兩種特性。 本說明書中,所謂「非硬化性」,意指藉由加熱照射能量線等任意方法均不硬化之性質。◎Film for forming protective film The aforementioned protective film formation film may be curable or non-curable. The film for forming a curable protective film may be either thermosetting or energy ray curability, and it may have both properties of thermosetting and energy ray curability. In this specification, the "non-curing property" means the property that it is not cured by any method such as heating and irradiating energy rays.

於使保護膜形成用膜熱硬化而形成保護膜之情形時,與藉由照射能量線而使之硬化之情形不同,保護膜形成用膜即便厚度厚,由於藉由加熱而充分硬化,故而亦能夠形成保護性能高之保護膜。另外,藉由使用加熱烘箱等通常的加熱方法,能夠多個保護膜形成用膜一起加熱而使之熱硬化。 於藉由能量線照射使保護膜形成用膜硬化而形成保護膜之情形時,與使之熱硬化之情形不同,保護膜形成用複合片無需具有耐熱性,可使用廣範圍之保護膜形成用複合片。另外,藉由照射能量線而能夠於短時間內硬化。 於不使保護膜形成用膜硬化而用作保護膜之情形時,能夠省略硬化步驟,因此能夠以簡化之步驟製造附保護膜之半導體晶片。When the protective film forming film is thermally cured to form a protective film, unlike the case where it is cured by irradiating energy rays, even if the thickness of the protective film forming film is thick, it will be sufficiently cured by heating. It can form a protective film with high protective performance. In addition, by using a general heating method such as a heating oven, a plurality of protective film forming films can be heated together to thermally harden them. When the protective film formation film is cured by energy ray irradiation to form a protective film, unlike the case of thermal curing, the composite sheet for protective film formation does not need to have heat resistance and can be used for a wide range of protective film formation Composite film. In addition, it can be cured in a short time by irradiating energy rays. When the film for forming a protective film is used as a protective film without hardening, the hardening step can be omitted, and therefore, a semiconductor wafer with a protective film can be manufactured in a simplified step.

前述保護膜形成用膜不硬化而以原本的狀態成為保護膜或藉由硬化而成為保護膜。該保護膜係用以保護半導體晶圓或半導體晶片的內面(換言之,與電極形成面為相反側的面)。保護膜形成用膜為軟質,能夠容易地貼附於貼附對象物。The aforementioned protective film formation film becomes a protective film in its original state without being cured, or becomes a protective film by curing. The protective film is used to protect the semiconductor wafer or the inner surface of the semiconductor wafer (in other words, the surface opposite to the electrode formation surface). The protective film formation film is soft and can be easily attached to an attachment object.

於前述保護膜形成用膜為非硬化性之情形時,在如後述般利用保護膜形成用膜將保護膜形成用複合片貼附於半導體晶圓之操作完成之階段,視為由保護膜形成用膜形成了保護膜。In the case where the aforementioned protective film formation film is non-curable, the protective film formation film is used to attach the protective film formation composite sheet to the semiconductor wafer at the stage when the operation is completed as described later, it is regarded as being formed by the protective film A protective film is formed with the film.

本說明書中,即便於保護膜形成用膜硬化後,只要維持防污片與保護膜形成用膜之硬化物(例如保護膜)之積層結構,則將該積層結構體稱為「保護膜形成用複合片」。In this specification, even after the protective film forming film is cured, as long as the layered structure of the antifouling sheet and the cured product of the protective film forming film (for example, protective film) is maintained, the layered structure is called "protective film forming Composite film".

無論保護膜形成用膜為硬化性及非硬化性之任一種,並且,於為硬化性之情形時,無論為熱硬化性及能量線硬化性之任一種,保護膜形成用膜均可由1層(單層)所構成,亦可由2層以上之多層所構成。於保護膜形成用膜由多層所構成之情形時,這些多層相互可相同亦可不同,這些多層的組合並無特別限定。Regardless of whether the protective film formation film is curable or non-curable, and when it is curable, whether it is thermosetting or energy ray curable, the protective film formation film can consist of one layer (Single layer) can also be composed of two or more layers. When the film for protective film formation is composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

無論保護膜形成用膜為硬化性及非硬化性之任一種,並且,於為硬化性之情形時,無論為熱硬化性及能量線硬化性之任一種,保護膜形成用膜的厚度均較佳為1μm至100μm,更佳為3μm至80μm,尤佳為5μm至60μm。藉由保護膜形成用膜的厚度為前述下限值以上,能夠形成保護能力更高之保護膜。藉由保護膜形成用膜的厚度為前述上限值以下,可避免厚度過厚。 此處,所謂「保護膜形成用膜的厚度」,意指保護膜形成用膜整體的厚度,例如所謂由多層所構成之保護膜形成用膜的厚度,意指構成保護膜形成用膜之全部層的合計厚度。Regardless of whether the protective film formation film is curable or non-curable, and in the case of curability, regardless of whether it is thermosetting or energy ray curability, the thickness of the protective film formation film is relatively It is preferably 1 μm to 100 μm, more preferably 3 μm to 80 μm, and particularly preferably 5 μm to 60 μm. When the thickness of the film for forming a protective film is more than the aforementioned lower limit, a protective film with higher protective ability can be formed. When the thickness of the film for forming a protective film is not more than the aforementioned upper limit, excessive thickness can be avoided. Here, the "thickness of the protective film formation film" means the overall thickness of the protective film formation film. For example, the thickness of the protective film formation film composed of multiple layers means the entirety of the protective film formation film The total thickness of the layer.

[保護膜形成用組成物] 保護膜形成用膜可使用含有該保護膜形成用膜的構成材料之保護膜形成用組成物而形成。例如,保護膜形成用膜可藉由於該保護膜形成用膜之形成對象面塗敷保護膜形成用組成物,視需要使之乾燥而形成。保護膜形成用組成物中的常溫下不會氣化的成分彼此的含量之比率通常與保護膜形成用膜中的前述成分彼此的含量之比率相同。 熱硬化性保護膜形成用膜可使用熱硬化性保護膜形成用組成物而形成,能量線硬化性保護膜形成用膜可使用能量線硬化性保護膜形成用組成物而形成,非硬化性保護膜形成用膜可使用非硬化性保護膜形成用組成物而形成。此外,本說明書中,於保護膜形成用膜具有熱硬化性及能量線硬化性之兩種特性之情形時,當對於形成保護膜而言保護膜形成用膜之熱硬化之貢獻大於能量線硬化之貢獻時,將保護膜形成用膜視為熱硬化性之膜。相反地,當對於形成保護膜而言保護膜形成用膜之能量線硬化之貢獻大於熱硬化之貢獻時,將保護膜形成用膜視為能量線硬化之膜。[Composition for forming protective film] The film for protective film formation can be formed using the composition for protective film formation containing the constituent material of the film for protective film formation. For example, the protective film formation film can be formed by coating the protective film formation composition on the surface to be formed of the protective film formation film, and drying it if necessary. The ratio of the contents of the components that do not vaporize at room temperature in the protective film formation composition is usually the same as the ratio of the contents of the aforementioned components in the protective film formation film. The film for forming a thermosetting protective film can be formed using the composition for forming a thermosetting protective film, and the film for forming an energy ray curable protective film can be formed using the composition for forming an energy ray curable protective film, and it is non-curable protection. The film for film formation can be formed using the composition for non-curable protective film formation. In addition, in this specification, when the protective film forming film has two characteristics of thermosetting and energy ray curability, the contribution of the thermal curing of the protective film forming film to the formation of the protective film is greater than that of the energy ray curing. In the case of the contribution, the protective film formation film is regarded as a thermosetting film. Conversely, when the contribution of the energy ray hardening of the protective film formation film to the formation of the protective film is greater than the contribution of thermal hardening, the protective film formation film is regarded as an energy ray hardened film.

保護膜形成用組成物之塗敷例如可利用與上述之黏著劑組成物之塗敷之情形相同的方法進行。The coating of the composition for forming a protective film can be performed, for example, by the same method as in the case of coating the above-mentioned adhesive composition.

無論保護膜形成用膜為硬化性及非硬化性之任一種,並且於為硬化性之情形時,無論為熱硬化性及能量線硬化性之任一種,保護膜形成用組成物的乾燥條件並無特別限定。但是,於保護膜形成用組成物含有後述溶媒之情形時,較佳為進行加熱乾燥。並且,含有溶媒之保護膜形成用組成物例如較佳為於70℃至130℃且10秒至5分鐘之條件下進行加熱乾燥。但是,熱硬化性保護膜形成用組成物較佳為以使該組成物本身、及由該組成物所形成之熱硬化性保護膜形成用膜不熱硬化之方式,進行加熱乾燥。Regardless of whether the protective film forming film is curable or non-curable, and when it is curable, whether it is thermosetting or energy ray curable, the drying conditions of the protective film forming composition are not There is no particular limitation. However, when the composition for forming a protective film contains a solvent described later, it is preferable to heat and dry. In addition, the solvent-containing composition for forming a protective film is preferably heated and dried under the conditions of 70°C to 130°C and 10 seconds to 5 minutes, for example. However, the composition for forming a thermosetting protective film is preferably heat-dried so that the composition itself and the film for forming a thermosetting protective film formed from the composition are not thermally cured.

以下,對熱硬化性保護膜形成用膜、能量線硬化性保護膜形成用膜及非硬化性保護膜形成用膜依序進行說明。Hereinafter, the film for forming a thermosetting protective film, the film for forming an energy ray curable protective film, and the film for forming a non-curing protective film will be described in order.

○熱硬化性保護膜形成用膜 關於將熱硬化性保護膜形成用膜貼附於半導體晶圓的內面並使之熱硬化而形成保護膜時的硬化條件,只要保護膜成為充分地發揮該保護膜的功能之程度的硬化度,則並無特別限定,根據熱硬化性保護膜形成用膜的種類適宜選擇即可。 例如,熱硬化性保護膜形成用膜之熱硬化時的加熱溫度較佳為100℃至200℃,更佳為110℃至180℃,尤佳為120℃至170℃。並且,前述熱硬化時的加熱時間較佳為0.5小時至5小時,更佳為0.5小時至3小時,尤佳為1小時至2小時。○Film for forming thermosetting protective film Regarding the curing conditions when a film for forming a thermosetting protective film is attached to the inner surface of a semiconductor wafer and thermally cured to form a protective film, as long as the protective film has a degree of curing that can fully perform the function of the protective film , It is not particularly limited, and may be appropriately selected according to the type of film for forming a thermosetting protective film. For example, the heating temperature during thermal curing of the film for forming a thermosetting protective film is preferably 100°C to 200°C, more preferably 110°C to 180°C, and particularly preferably 120°C to 170°C. In addition, the heating time during thermal hardening is preferably 0.5 hour to 5 hours, more preferably 0.5 hour to 3 hours, and particularly preferably 1 hour to 2 hours.

作為較佳的熱硬化性保護膜形成用膜,例如可列舉含有聚合物成分(A)及熱硬化性成分(B)之膜。聚合物成分(A)係視為聚合性化合物進行聚合反應而形成之成分。另外,熱硬化性成分(B)係可將熱作為反應之觸發而進行硬化(聚合)反應之成分。此外,本說明書中,聚合反應中亦包括縮聚反應。As a preferable film for forming a thermosetting protective film, for example, a film containing a polymer component (A) and a thermosetting component (B) can be cited. The polymer component (A) is regarded as a component formed by the polymerization reaction of a polymerizable compound. In addition, the thermosetting component (B) is a component that can undergo a hardening (polymerization) reaction using heat as a trigger of the reaction. In addition, in this specification, a polycondensation reaction is also included in the polymerization reaction.

[熱硬化性保護膜形成用組成物(III-1)] 作為較佳的熱硬化性保護膜形成用組成物,例如可列舉含有前述聚合物成分(A)及熱硬化性成分(B)之熱硬化性保護膜形成用組成物(III-1)(本說明書中,有時僅簡稱為「組成物(III-1)」)等。[Composition for forming thermosetting protective film (III-1)] As a preferable composition for forming a thermosetting protective film, for example, a composition for forming a thermosetting protective film (III-1) containing the aforementioned polymer component (A) and thermosetting component (B) (this In the specification, it may be simply referred to as "composition (III-1)") and so on.

[聚合物成分(A)] 聚合物成分(A)係用以對熱硬化性保護膜形成用膜賦予造膜性或可撓性等之成分。 組成物(III-1)及熱硬化性保護膜形成用膜所含有之聚合物成分(A)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。[Polymer component (A)] The polymer component (A) is a component for imparting film forming properties or flexibility to the film for forming a thermosetting protective film. The polymer component (A) contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, a combination of these And the ratio can be chosen arbitrarily.

作為聚合物成分(A),例如可列舉丙烯酸樹脂、胺基甲酸酯樹脂、苯氧基樹脂、聚矽氧樹脂、飽和聚酯樹脂等,較佳為丙烯酸樹脂。Examples of the polymer component (A) include acrylic resins, urethane resins, phenoxy resins, silicone resins, saturated polyester resins, and the like, and acrylic resins are preferred.

作為聚合物成分(A)中的前述丙烯酸樹脂,可列舉公知的丙烯酸聚合物。 丙烯酸樹脂的重量平均分子量(Mw)較佳為10000至2000000,更佳為100000至1500000。藉由丙烯酸樹脂的重量平均分子量為前述下限值以上,熱硬化性保護膜形成用膜的形狀穩定性(保管時的經時穩定性)提高。藉由丙烯酸樹脂的重量平均分子量為前述上限值以下,熱硬化性保護膜形成用膜變得易於追隨於被接著體的凹凸面,可進一步抑制於被接著體與熱硬化性保護膜形成用膜之間產生空隙(void)等。 此外,本說明書中,所謂「重量平均分子量」,只要無特別說明,則係指藉由凝膠滲透層析(GPC;Gel Permeation Chromatography)法所測定之聚苯乙烯換算值。As the aforementioned acrylic resin in the polymer component (A), a known acrylic polymer can be cited. The weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. When the weight average molecular weight of the acrylic resin is equal to or greater than the aforementioned lower limit, the shape stability of the film for forming a thermosetting protective film (stability with time during storage) is improved. When the weight average molecular weight of the acrylic resin is below the above upper limit, the film for forming a thermosetting protective film can easily follow the uneven surface of the adherend, and it can be further suppressed for the formation of the adherend and the thermosetting protective film. Voids and the like are generated between the films. In addition, in this specification, the "weight average molecular weight" means a polystyrene conversion value measured by a gel permeation chromatography (GPC; Gel Permeation Chromatography) method unless otherwise specified.

丙烯酸樹脂的玻璃轉移溫度(Tg)較佳為-60℃至70℃,更佳為-30℃至50℃。藉由丙烯酸樹脂的Tg為前述下限值以上,例如保護膜形成用膜之硬化物與防污片之接著力得到抑制,防污片的剝離性適度提高。藉由丙烯酸樹脂的Tg為前述上限值以下,熱硬化性保護膜形成用膜及其硬化物與被接著體之接著力提高。The glass transition temperature (Tg) of the acrylic resin is preferably -60°C to 70°C, more preferably -30°C to 50°C. When the Tg of the acrylic resin is more than the aforementioned lower limit, for example, the adhesion between the cured product of the protective film forming film and the antifouling sheet is suppressed, and the releasability of the antifouling sheet is moderately improved. When the Tg of the acrylic resin is equal to or lower than the aforementioned upper limit, the adhesive force between the film for forming a thermosetting protective film and its cured product and the adherend is improved.

於丙烯酸樹脂具有m種(m為2以上之整數)構成單元,針對衍生成這些構成單元之m種單體,分別依序分配1至m之任一個不重複之編號,並命名為「單體m」之情形時,丙烯酸樹脂的玻璃轉移溫度(Tg)可使用以下所示之Fox公式而算出。Acrylic resin has m kinds of structural units (m is an integer of 2 or more). For the m kinds of monomers derived from these structural units, any one from 1 to m is assigned in sequence and a non-repeating number is assigned and named as "monomer". In the case of m", the glass transition temperature (Tg) of the acrylic resin can be calculated using the Fox formula shown below.

[數1]

Figure 02_image001
(式中,Tg為丙烯酸樹脂的玻璃轉移溫度;m為2以上之整數;Tgk 為單體m之均聚物的玻璃轉移溫度;Wk 為丙烯酸樹脂中的由單體m衍生之構成單元m的質量分率,其中,Wk 滿足下述式)[Number 1]
Figure 02_image001
(In the formula, Tg is the glass transition temperature of acrylic resin; m is an integer greater than 2; Tg k is the glass transition temperature of the homopolymer of monomer m; W k is the structural unit derived from monomer m in acrylic resin The mass fraction of m, where W k satisfies the following formula)

[數2]

Figure 02_image003
(式中,m及Wk 與前述相同)[Number 2]
Figure 02_image003
(In the formula, m and W k are the same as above)

作為前述Tgk ,可使用高分子資料/手冊或黏著手冊中所記載之值。例如,丙烯酸甲酯之均聚物的Tgk 為10℃,甲基丙烯酸甲酯之均聚物的Tgk 為105℃,丙烯酸2-羥基乙酯之均聚物的Tgk 為-15℃。As the aforementioned Tg k , the values described in the polymer materials/manuals or adhesive manuals can be used. For example, the methacrylate homopolymer Tg k of 10 ℃, of a methyl methacrylate homopolymer Tg k of 105 ℃, of 2-hydroxyethyl acrylate homopolymer Tg k of -15 ℃.

作為丙烯酸樹脂,例如可列舉:1種或2種以上之(甲基)丙烯酸酯之聚合物;選自(甲基)丙烯酸、衣康酸、乙酸乙烯酯、丙烯腈、苯乙烯及N-羥甲基丙烯醯胺等中的2種以上之單體之共聚物等。Examples of acrylic resins include: one or two or more (meth)acrylate polymers; selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-hydroxy Copolymers of two or more monomers in methacrylamide, etc.

此外,本說明書中,「(甲基)丙烯酸」的概念包括「丙烯酸」及「甲基丙烯酸」兩者。關於與(甲基)丙烯酸類似的用語亦相同,例如「(甲基)丙烯醯基」的概念包括「丙烯醯基」及「甲基丙烯醯基」兩者,「(甲基)丙烯酸酯」的概念包括「丙烯酸酯」及「甲基丙烯酸酯」兩者。In addition, in this specification, the concept of "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid". The terms similar to (meth)acrylic acid are also the same. For example, the concept of "(meth)acrylic acid group" includes both "acrylic acid group" and "methacrylic acid group", and "(meth)acrylate" The concept includes both "acrylate" and "methacrylate".

作為構成丙烯酸樹脂之前述(甲基)丙烯酸酯,例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯((甲基)丙烯酸月桂酯)、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯((甲基)丙烯酸肉豆蔻酯)、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯((甲基)丙烯酸棕櫚酯)、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯((甲基)丙烯酸硬脂酯)等構成烷基酯之烷基為碳數為1至18之鏈狀結構之(甲基)丙烯酸烷基酯;(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯等(甲基)丙烯酸環烷基酯;(甲基)丙烯酸苄酯等(甲基)丙烯酸芳烷基酯;(甲基)丙烯酸二環戊烯酯等(甲基)丙烯酸環烯酯;(甲基)丙烯酸二環戊烯氧基乙酯等(甲基)丙烯酸環烯氧基烷基酯;(甲基)丙烯醯亞胺;(甲基)丙烯酸縮水甘油酯等含縮水甘油基之(甲基)丙烯酸酯;(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等含羥基之(甲基)丙烯酸酯;(甲基)丙烯酸N-甲基胺基乙酯等含取代胺基之(甲基)丙烯酸酯等。此處,所謂「取代胺基」,意指胺基的1個或2個氫原子由氫原子以外的基取代而成之基。Examples of the (meth)acrylate constituting the acrylic resin include: methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, and isopropyl (meth)acrylate , N-butyl (meth)acrylate, isobutyl (meth)acrylate, second butyl (meth)acrylate, tertiary butyl (meth)acrylate, pentyl (meth)acrylate, (meth) )Hexyl acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate Ester, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), Tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate Alkyl esters (palmityl (meth)acrylate), heptadecyl (meth)acrylate, stearyl (meth)acrylate (stearyl (meth)acrylate), etc. constitute one of the alkyl esters The alkyl group is a (meth)acrylic acid alkyl ester with a chain structure with carbon number of 1 to 18; (meth)acrylic acid cycloalkyl group such as isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, etc. Esters; aralkyl (meth)acrylates such as benzyl (meth)acrylate; cycloalkenyl (meth)acrylates such as dicyclopentenyl (meth)acrylate; dicyclopentenoxy (meth)acrylate (Meth)acrylic acid cycloalkenyloxyalkyl esters such as ethyl ester; (meth)acrylimines; glycidyl (meth)acrylate and other glycidyl-containing (meth)acrylates; (meth) ) Hydroxymethyl acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, Hydroxy-containing (meth)acrylates such as 3-hydroxybutyl (meth)acrylate and 4-hydroxybutyl (meth)acrylate; N-methylaminoethyl (meth)acrylate containing substituted amino groups The (meth)acrylate and so on. Here, the "substituted amino group" means a group in which one or two hydrogen atoms of the amino group are substituted with groups other than hydrogen atoms.

丙烯酸樹脂例如除前述(甲基)丙烯酸酯以外,亦可為使選自(甲基)丙烯酸、衣康酸、乙酸乙烯酯、丙烯腈、苯乙烯及N-羥甲基丙烯醯胺等中的1種或2種以上之單體進行共聚而成之丙烯酸樹脂。The acrylic resin may be selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, etc., in addition to the aforementioned (meth)acrylate. Acrylic resin made by copolymerization of one or more monomers.

構成丙烯酸樹脂之單體可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The monomer constituting the acrylic resin may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these can be arbitrarily selected.

丙烯酸樹脂亦可具有乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等可與其他化合物鍵結之官能基。丙烯酸樹脂的前述官能基可經由後述之交聯劑(F)與其他化合物鍵結,亦可不經由交聯劑(F)而與其他化合物直接鍵結。藉由丙烯酸樹脂經由前述官能基與其他化合物鍵結,有使用保護膜形成用複合片所獲得之封裝體的可靠性提高之傾向。The acrylic resin may also have functional groups such as vinyl groups, (meth)acrylic groups, amine groups, hydroxyl groups, carboxyl groups, and isocyanate groups that can be bonded to other compounds. The aforementioned functional group of the acrylic resin may be bonded to other compounds via the crosslinking agent (F) described later, or may be directly bonded to other compounds without the crosslinking agent (F). When the acrylic resin is bonded to another compound via the aforementioned functional group, the reliability of the package obtained by using the composite sheet for forming a protective film tends to be improved.

本發明中,作為聚合物成分(A),可不使用丙烯酸樹脂而單獨使用丙烯酸樹脂以外的熱塑性樹脂(以下,有時僅簡稱為「熱塑性樹脂」),亦可與丙烯酸樹脂併用。藉由使用前述熱塑性樹脂,有時保護膜自支撐片之剝離性提高,或熱硬化性保護膜形成用膜變得易於追隨於被接著體的凹凸面,從而可進一步抑制於被接著體與熱硬化性保護膜形成用膜之間產生空隙等。In the present invention, as the polymer component (A), a thermoplastic resin other than an acrylic resin (hereinafter, simply referred to as "thermoplastic resin" in some cases) may be used alone instead of an acrylic resin, or may be used in combination with an acrylic resin. By using the aforementioned thermoplastic resin, the peelability of the protective film from the supporting sheet may be improved, or the film for forming a thermosetting protective film may easily follow the uneven surface of the adherend, which can further suppress the adhesion to the adherend and heat. There are voids between the films for forming the curable protective film.

前述熱塑性樹脂的重量平均分子量較佳為1000至100000,更佳為3000至80000。The weight average molecular weight of the aforementioned thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.

前述熱塑性樹脂的玻璃轉移溫度(Tg)較佳為-30℃至150℃,更佳為-20℃至120℃。The glass transition temperature (Tg) of the aforementioned thermoplastic resin is preferably -30°C to 150°C, more preferably -20°C to 120°C.

作為前述熱塑性樹脂,例如可列舉:聚酯、聚胺基甲酸酯、苯氧基樹脂、聚丁烯、聚丁二烯、聚苯乙烯等。As said thermoplastic resin, polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, polystyrene, etc. are mentioned, for example.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之前述熱塑性樹脂可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned thermoplastic resin contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, the combination and ratio of these resins may be Free to choose.

組成物(III-1)中,無關於聚合物成分(A)的種類,聚合物成分(A)的含量相對於溶媒以外的全部成分的總含量之比例(亦即,熱硬化性保護膜形成用膜中的聚合物成分(A)的含量相對於熱硬化性保護膜形成用膜的總質量之比例)均較佳為5質量%至85質量%,更佳為5質量%至80質量%,例如可為5質量%至65質量%、5質量%至50質量%、5質量%至35質量%、10質量%至35質量%、及15質量%至35質量%之任一種。In the composition (III-1), regardless of the type of the polymer component (A), the ratio of the content of the polymer component (A) to the total content of all components other than the solvent (that is, the thermosetting protective film is formed) The ratio of the content of the polymer component (A) in the film to the total mass of the film for forming a thermosetting protective film) is preferably 5 to 85% by mass, more preferably 5 to 80% by mass For example, it can be any of 5 mass% to 65% by mass, 5 mass% to 50 mass%, 5 mass% to 35% by mass, 10 mass% to 35% by mass, and 15 mass% to 35% by mass.

聚合物成分(A)有時亦相當於熱硬化性成分(B)。本發明中,於組成物(III-1)含有此種相當於聚合物成分(A)及熱硬化性成分(B)兩者之成分之情形時,組成物(III-1)視為含有聚合物成分(A)及熱硬化性成分(B)。The polymer component (A) may also correspond to the thermosetting component (B). In the present invention, when the composition (III-1) contains such components corresponding to both the polymer component (A) and the thermosetting component (B), the composition (III-1) is regarded as containing polymer Material component (A) and thermosetting component (B).

[熱硬化性成分(B)] 熱硬化性成分(B)係用以使熱硬化性保護膜形成用膜硬化之成分。 組成物(III-1)及熱硬化性保護膜形成用膜所含有之熱硬化性成分(B)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。[Thermosetting component (B)] The thermosetting component (B) is a component for curing the film for forming a thermosetting protective film. The composition (III-1) and the thermosetting component (B) contained in the film for forming a thermosetting protective film may be one type or two or more types. In the case of two or more types, these The combination and ratio can be selected arbitrarily.

作為熱硬化性成分(B),例如可列舉環氧系熱硬化性樹脂、聚醯亞胺系樹脂、不飽和聚酯樹脂等,較佳為環氧系熱硬化性樹脂。Examples of the thermosetting component (B) include epoxy-based thermosetting resins, polyimide-based resins, and unsaturated polyester resins, and epoxy-based thermosetting resins are preferred.

[環氧系熱硬化性樹脂] 環氧系熱硬化性樹脂由環氧樹脂(B1)及熱硬化劑(B2)所構成。 組成物(III-1)及熱硬化性保護膜形成用膜所含有之環氧系熱硬化性樹脂可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。[Epoxy-based thermosetting resin] The epoxy-based thermosetting resin is composed of an epoxy resin (B1) and a thermosetting agent (B2). The epoxy-based thermosetting resin contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, these The combination and ratio can be selected arbitrarily.

・環氧樹脂(B1) 作為環氧樹脂(B1),可列舉公知的環氧樹脂,例如可列舉:多官能系環氧樹脂、聯苯化合物、雙酚A二縮水甘油醚及其氫化物、鄰甲酚酚醛清漆環氧樹脂、二環戊二烯型環氧樹脂、聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、伸苯基骨架型環氧樹脂等2官能以上之環氧化合物。・Epoxy resin (B1) As the epoxy resin (B1), well-known epoxy resins can be cited, for example, polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, o-cresol novolac epoxy Resins, dicyclopentadiene type epoxy resins, biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenylene skeleton type epoxy resins and other epoxy resins with more than two functions Compound.

作為環氧樹脂(B1),亦可使用具有不飽和烴基之環氧樹脂。具有不飽和烴基之環氧樹脂相較於不具有不飽和烴基之環氧樹脂,與丙烯酸樹脂之相容性較高。因此,藉由使用具有不飽和烴基之環氧樹脂,使用保護膜形成用複合片所獲得之附保護膜之半導體晶片的可靠性提高。As the epoxy resin (B1), an epoxy resin having an unsaturated hydrocarbon group can also be used. Epoxy resins with unsaturated hydrocarbon groups have higher compatibility with acrylic resins than epoxy resins without unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of a semiconductor wafer with a protective film obtained by using a composite sheet for forming a protective film is improved.

作為具有不飽和烴基之環氧樹脂,例如可列舉:多官能系環氧樹脂的一部分環氧基變換為具有不飽和烴基之基而成之化合物。此種化合物例如藉由使(甲基)丙烯酸或其衍生物與環氧基進行加成反應而獲得。 另外,作為具有不飽和烴基之環氧樹脂,例如可列舉:於構成環氧樹脂之芳香環等直接鍵結有具有不飽和烴基之基之化合物等。 不飽和烴基為具有聚合性之不飽和基,作為該不飽和烴基的具體例,可列舉:次乙基(乙烯基)、2-丙烯基(烯丙基)、(甲基)丙烯醯基、(甲基)丙烯醯胺基等,較佳為丙烯醯基。As an epoxy resin having an unsaturated hydrocarbon group, for example, a compound obtained by converting a part of epoxy groups of a polyfunctional epoxy resin into a group having an unsaturated hydrocarbon group can be cited. Such a compound is obtained, for example, by performing an addition reaction of (meth)acrylic acid or a derivative thereof with an epoxy group. In addition, as an epoxy resin having an unsaturated hydrocarbon group, for example, a compound having a group having an unsaturated hydrocarbon group directly bonded to an aromatic ring constituting the epoxy resin or the like can be cited. The unsaturated hydrocarbon group is a polymerizable unsaturated group. Specific examples of the unsaturated hydrocarbon group include ethylene (vinyl), 2-propenyl (allyl), (meth)acrylic, The (meth)acrylamido group, etc., is preferably an acrylamido group.

環氧樹脂(B1)的數量平均分子量並無特別限定,但就熱硬化性保護膜形成用膜之硬化性、以及保護膜的強度及耐熱性之方面而言,較佳為300至30000,更佳為300至10000,尤佳為300至3000。 環氧樹脂(B1)的環氧當量較佳為100g/eq至1000g/eq,更佳為150g/eq至950g/eq。The number average molecular weight of the epoxy resin (B1) is not particularly limited, but in terms of the curability of the thermosetting protective film forming film, and the strength and heat resistance of the protective film, it is preferably 300 to 30,000, and more It is preferably 300 to 10,000, particularly preferably 300 to 3,000. The epoxy equivalent of the epoxy resin (B1) is preferably 100 g/eq to 1000 g/eq, more preferably 150 g/eq to 950 g/eq.

環氧樹脂(B1)可單獨使用1種,亦可併用2種以上,於併用2種以上之情形時,這些的組合及比率可任意選擇。The epoxy resin (B1) may be used individually by 1 type, and may use 2 or more types together. When using 2 or more types together, these combination and ratio can be selected arbitrarily.

・熱硬化劑(B2) 熱硬化劑(B2)發揮作為針對環氧樹脂(B1)之硬化劑之功能。 作為熱硬化劑(B2),例如可列舉:1分子中具有2個以上之可與環氧基反應之官能基之化合物。作為前述官能基,例如可列舉:酚性羥基、醇性羥基、胺基、羧基、酸基經酐化而成之基等,較佳為酚性羥基、胺基、或酸基經酐化而成之基,更佳為酚性羥基或胺基。・Thermal hardener (B2) The thermal hardener (B2) functions as a hardener for the epoxy resin (B1). As a thermosetting agent (B2), the compound which has 2 or more functional groups which can react with an epoxy group in 1 molecule is mentioned, for example. As the aforementioned functional group, for example, a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, a group formed by an anhydride of an acid group, etc. are mentioned, preferably a phenolic hydroxyl group, an amino group, or an acid group formed by an anhydride The formed group is more preferably a phenolic hydroxyl group or an amino group.

熱硬化劑(B2)中,作為具有酚性羥基之酚系硬化劑,例如可列舉:多官能酚樹脂、聯苯酚、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等。 熱硬化劑(B2)中,作為具有胺基之胺系硬化劑,例如可列舉雙氰胺等。Among the thermosetting agents (B2), examples of phenolic curing agents having phenolic hydroxyl groups include polyfunctional phenol resins, biphenols, novolac type phenol resins, dicyclopentadiene type phenol resins, and aralkyl type phenol resins. Phenolic resin, etc. Among the thermosetting agents (B2), examples of the amine-based curing agent having an amine group include dicyandiamide.

熱硬化劑(B2)亦可具有不飽和烴基。 作為具有不飽和烴基之熱硬化劑(B2),例如可列舉:酚樹脂的一部分羥基由具有不飽和烴基之基取代而成之化合物、於酚樹脂的芳香環上直接鍵結具有不飽和烴基之基而成之化合物等。 熱硬化劑(B2)中的前述不飽和烴基與上述之具有不飽和烴基之環氧樹脂中的不飽和烴基相同。The thermosetting agent (B2) may have an unsaturated hydrocarbon group. As the thermosetting agent (B2) having an unsaturated hydrocarbon group, for example, a compound in which a part of the hydroxyl group of a phenol resin is substituted with a group having an unsaturated hydrocarbon group, and a compound having an unsaturated hydrocarbon group directly bonded to the aromatic ring of the phenol resin Based on the compound and so on. The aforementioned unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the aforementioned epoxy resin having an unsaturated hydrocarbon group.

熱硬化劑(B2)中,例如多官能酚樹脂、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等樹脂成分的數量平均分子量較佳為300至30000,更佳為400至10000,尤佳為500至3000。 熱硬化劑(B2)中,例如聯苯酚、雙氰胺等非樹脂成分的分子量並無特別限定,例如較佳為60至500。In the thermosetting agent (B2), for example, the number average molecular weight of resin components such as polyfunctional phenol resin, novolak type phenol resin, dicyclopentadiene type phenol resin, and aralkyl type phenol resin is preferably 300 to 30,000, and more It is preferably 400 to 10,000, particularly preferably 500 to 3,000. In the thermosetting agent (B2), the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited. For example, it is preferably 60 to 500.

熱硬化劑(B2)可單獨使用1種,亦可併用2種以上,於併用2種以上之情形時,這些的組合及比率可任意選擇。A thermosetting agent (B2) may be used individually by 1 type, and may use 2 or more types together. When using 2 or more types together, these combination and ratio can be selected arbitrarily.

組成物(III-1)及熱硬化性保護膜形成用膜中,熱硬化劑(B2)的含量相對於環氧樹脂(B1)的含量100質量份,較佳為0.1質量份至500質量份,更佳為1質量份至200質量份,例如可為1質量份至100質量份、1質量份至50質量份、1質量份至25質量份、及1質量份至10質量份之任一種。藉由熱硬化劑(B2)的前述含量為前述下限值以上,熱硬化性保護膜形成用膜變得更容易進行硬化。藉由熱硬化劑(B2)的前述含量為前述上限值以下,熱硬化性保護膜形成用膜的吸濕率降低,使用保護膜形成用複合片所獲得之封裝體的可靠性進一步提高。In the composition (III-1) and the film for forming a thermosetting protective film, the content of the thermosetting agent (B2) relative to 100 parts by mass of the epoxy resin (B1), preferably 0.1 to 500 parts by mass , More preferably 1 part by mass to 200 parts by mass, for example, can be any of 1 part by mass to 100 parts by mass, 1 part by mass to 50 parts by mass, 1 part by mass to 25 parts by mass, and 1 part by mass to 10 parts by mass . When the said content of a thermosetting agent (B2) is more than the said lower limit, the film for thermosetting protective film formation becomes easy to harden. When the aforementioned content of the thermosetting agent (B2) is below the aforementioned upper limit, the moisture absorption rate of the thermosetting protective film formation film is reduced, and the reliability of the package obtained using the protective film formation composite sheet is further improved.

組成物(III-1)及熱硬化性保護膜形成用膜中,熱硬化性成分(B)的含量(例如,環氧樹脂(B1)及熱硬化劑(B2)的總含量)相對於聚合物成分(A)的含量100質量份,較佳為20質量份至500質量份,更佳為25質量份至300質量份,進而較佳為30質量份至150質量份,例如可為35質量份至100質量份、及40質量份至80質量份之任一種。藉由熱硬化性成分(B)的前述含量為此種範圍,例如保護膜形成用膜之硬化物與防污片之接著力得到抑制,防污片的剝離性提高。In the composition (III-1) and the film for forming a thermosetting protective film, the content of the thermosetting component (B) (for example, the total content of the epoxy resin (B1) and the thermosetting agent (B2)) relative to the polymerization The content of the material component (A) is 100 parts by mass, preferably 20 parts by mass to 500 parts by mass, more preferably 25 parts by mass to 300 parts by mass, still more preferably 30 parts by mass to 150 parts by mass, for example, 35 parts by mass Any one of parts to 100 parts by mass, and 40 parts to 80 parts by mass. When the aforementioned content of the thermosetting component (B) is in this range, for example, the adhesive force of the cured product of the protective film forming film and the antifouling sheet is suppressed, and the peelability of the antifouling sheet is improved.

[硬化促進劑(C)] 組成物(III-1)及熱硬化性保護膜形成用膜亦可含有硬化促進劑(C)。硬化促進劑(C)係用以調整組成物(III-1)的硬化速度之成分。 作為較佳的硬化促進劑(C),例如可列舉:三乙二胺、苄基二甲胺、三乙醇胺、二甲胺基乙醇、三(二甲胺基甲基)苯酚等三級胺;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等咪唑類(1個以上之氫原子由氫原子以外的基取代而成之咪唑);三丁基膦、二苯基膦、三苯基膦等有機膦類(1個以上之氫原子由有機基取代而成之膦);四苯基硼酸四苯基鏻、四苯基硼酸三苯基膦等四苯基硼鹽等。[Hardening accelerator (C)] The composition (III-1) and the film for forming a thermosetting protective film may contain a curing accelerator (C). The hardening accelerator (C) is a component for adjusting the hardening speed of the composition (III-1). As a preferable hardening accelerator (C), for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol can be cited; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5- Imidazoles such as hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (one or more Phosphine in which hydrogen atoms are replaced by organic groups); tetraphenyl boron salts such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, etc.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之硬化促進劑(C)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The composition (III-1) and the curing accelerator (C) contained in the film for forming a thermosetting protective film may be one type or two or more types. In the case of two or more types, a combination of these And the ratio can be chosen arbitrarily.

於使用硬化促進劑(C)之情形時,組成物(III-1)及熱硬化性保護膜形成用膜中,硬化促進劑(C)的含量相對於熱硬化性成分(B)的含量100質量份,較佳為0.01質量份至10質量份,更佳為0.1質量份至7質量份。藉由硬化促進劑(C)的前述含量為前述下限值以上,可更顯著地獲得由使用硬化促進劑(C)所帶來之效果。藉由硬化促進劑(C)的含量為前述上限值以下,例如抑制高極性的硬化促進劑(C)於高溫、高濕度條件下在熱硬化性保護膜形成用膜中朝熱硬化性保護膜形成用膜與被接著體之接著界面側移動而偏析之效果變高。結果,使用保護膜形成用複合片所獲得之附保護膜之半導體晶片的可靠性進一步提高。In the case of using the curing accelerator (C), the content of the curing accelerator (C) in the composition (III-1) and the film for forming a thermosetting protective film is relative to the content of the thermosetting component (B) 100 Parts by mass, preferably 0.01 parts by mass to 10 parts by mass, more preferably 0.1 parts by mass to 7 parts by mass. When the aforementioned content of the hardening accelerator (C) is more than the aforementioned lower limit, the effect of using the hardening accelerator (C) can be more remarkably obtained. Since the content of the hardening accelerator (C) is below the aforementioned upper limit, for example, the high-polar hardening accelerator (C) is prevented from being thermally curable in the film for forming a thermosetting protective film under high temperature and high humidity conditions. The adhesion interface side between the film for film formation and the adherend moves to increase the effect of segregation. As a result, the reliability of the semiconductor wafer with a protective film obtained by using the composite sheet for forming a protective film is further improved.

[填充材料(D)] 組成物(III-1)及熱硬化性保護膜形成用膜亦可含有填充材料(D)。藉由熱硬化性保護膜形成用膜含有填充材料(D),使熱硬化性保護膜形成用膜硬化而獲得之保護膜容易調整熱膨脹係數,使該熱膨脹係數對於保護膜之形成對象物而言最適宜,藉此使用保護膜形成用複合片所獲得之附保護膜之半導體晶片的可靠性進一步提高。另外,藉由熱硬化性保護膜形成用膜含有填充材料(D),亦能夠降低保護膜的吸濕率,或提高散熱性。[Filling material (D)] The composition (III-1) and the film for forming a thermosetting protective film may contain a filler (D). When the thermosetting protective film forming film contains the filler (D), the protective film obtained by curing the thermosetting protective film forming film can easily adjust the thermal expansion coefficient so that the thermal expansion coefficient is relative to the object to be formed of the protective film Most preferably, the reliability of the semiconductor wafer with a protective film obtained by using the composite sheet for forming a protective film is further improved. In addition, when the film for forming a thermosetting protective film contains the filler (D), the moisture absorption rate of the protective film can also be reduced, or the heat dissipation can be improved.

填充材料(D)可為有機填充材料及無機填充材料之任一種,較佳為無機填充材料。 作為較佳的無機填充材料,例如可列舉:二氧化矽、氧化鋁、滑石、碳酸鈣、鈦白、鐵丹、碳化矽、氮化硼等之粉末;將這些無機填充材料球形化而成之珠粒;這些無機填充材料的表面改質品;這些無機填充材料的單晶纖維;玻璃纖維等。 這些之中,無機填充材料較佳為二氧化矽或氧化鋁,更佳為二氧化矽。The filling material (D) can be any one of an organic filling material and an inorganic filling material, preferably an inorganic filling material. As preferred inorganic fillers, for example, powders of silica, alumina, talc, calcium carbonate, titanium dioxide, iron oxide, silicon carbide, boron nitride, etc. can be cited; these inorganic fillers are made by spheronizing these inorganic fillers. Beads; surface modification products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc. Among these, the inorganic filler material is preferably silica or alumina, and more preferably silica.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之填充材料(D)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The filler (D) contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, the combination of these and The ratio can be chosen arbitrarily.

於使用填充材料(D)之情形時,組成物(III-1)中,填充材料(D)的含量相對於溶媒以外的全部成分的總含量之比例(亦即,熱硬化性保護膜形成用膜中的填充材料(D)的含量相對於熱硬化性保護膜形成用膜的總質量之比例)較佳為5質量%至80質量%,更佳為10質量%至70質量%,例如可為20質量%至65質量%、30質量%至65質量%、及40質量%至65質量%之任一種。藉由前述比例為此種範圍,更容易調整上述之保護膜之熱膨脹係數。When the filler (D) is used, in the composition (III-1), the ratio of the content of the filler (D) to the total content of all components other than the solvent (that is, for forming a thermosetting protective film) The ratio of the content of the filler (D) in the film to the total mass of the film for forming a thermosetting protective film) is preferably 5 mass% to 80 mass%, more preferably 10 mass% to 70 mass%, for example, It is any of 20% by mass to 65% by mass, 30% by mass to 65% by mass, and 40% by mass to 65% by mass. With the aforementioned ratio in this range, it is easier to adjust the thermal expansion coefficient of the aforementioned protective film.

[偶合劑(E)] 組成物(III-1)及熱硬化性保護膜形成用膜亦可含有偶合劑(E)。藉由使用具有可與無機化合物或有機化合物反應之官能基之化合物作為偶合劑(E),能夠提高熱硬化性保護膜形成用膜對被接著體之接著性及密接性。另外,藉由使用偶合劑(E),由熱硬化性保護膜形成用膜所形成之保護膜不損害耐熱性而耐水性提高。[Coupling agent (E)] The composition (III-1) and the film for forming a thermosetting protective film may contain a coupling agent (E). By using a compound having a functional group capable of reacting with an inorganic compound or an organic compound as the coupling agent (E), the adhesiveness and adhesion of the film for forming a thermosetting protective film to the adherend can be improved. In addition, by using the coupling agent (E), the protective film formed from the film for forming a thermosetting protective film does not impair heat resistance and improves water resistance.

偶合劑(E)較佳為具有可與聚合物成分(A)、熱硬化性成分(B)等所具有之官能基反應之官能基之化合物,更佳為矽烷偶合劑。 作為較佳的前述矽烷偶合劑,例如可列舉:3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、3-縮水甘油氧基甲基二乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基甲基二乙氧基矽烷、3-(苯基胺基)丙基三甲氧基矽烷、3-苯胺基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽基丙基)四硫化物、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑矽烷等。The coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional group possessed by the polymer component (A) and the thermosetting component (B), and more preferably a silane coupling agent. As a preferred silane coupling agent, for example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyl Triethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethyl Oxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propylmethyl Diethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethyl Oxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl) tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, ethylene Trimethoxysilane, vinyl triethoxysilane, imidazole silane, etc.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之偶合劑(E)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The coupling agent (E) contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, the combination of these and The ratio can be chosen arbitrarily.

於使用偶合劑(E)之情形時,組成物(III-1)及熱硬化性保護膜形成用膜中,偶合劑(E)的含量相對於聚合物成分(A)及熱硬化性成分(B)的總含量100質量份,較佳為0.03質量份至20質量份,更佳為0.05質量份至10質量份,尤佳為0.1質量份至5質量份。藉由偶合劑(E)的前述含量為前述下限值以上,可更顯著地獲得如下之由使用偶合劑(E)所帶來之效果:填充材料(D)於樹脂中之分散性提高,或熱硬化性保護膜形成用膜與被接著體之接著性提高等。藉由偶合劑(E)的前述含量為前述上限值以下,可進一步抑制產生逸氣。When the coupling agent (E) is used, the content of the coupling agent (E) in the composition (III-1) and the film for forming a thermosetting protective film is relative to the polymer component (A) and the thermosetting component ( The total content of B) is 100 parts by mass, preferably 0.03 parts by mass to 20 parts by mass, more preferably 0.05 parts by mass to 10 parts by mass, and particularly preferably 0.1 parts by mass to 5 parts by mass. When the aforementioned content of the coupling agent (E) is above the aforementioned lower limit, the following effects brought about by the use of the coupling agent (E) can be obtained more significantly: the dispersibility of the filler (D) in the resin is improved, Or the adhesion between the film for forming a thermosetting protective film and the adherend is improved. When the aforementioned content of the coupling agent (E) is below the aforementioned upper limit, the generation of outgassing can be further suppressed.

[交聯劑(F)] 於使用具有可與其他化合物鍵結之乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等官能基之上述丙烯酸樹脂等作為聚合物成分(A)之情形時,組成物(III-1)及熱硬化性保護膜形成用膜亦可含有交聯劑(F)。交聯劑(F)係用以使聚合物成分(A)中的前述官能基與其他化合物鍵結而進行交聯之成分,藉由如此進行交聯,能夠調節熱硬化性保護膜形成用膜的初始接著力及凝聚力。[Crosslinking agent (F)] When using the above-mentioned acrylic resin with functional groups such as vinyl, (meth)acrylic acid group, amino group, hydroxyl group, carboxyl group, isocyanate group, etc., which can be bonded with other compounds, as the polymer component (A), the composition The compound (III-1) and the film for forming a thermosetting protective film may contain a crosslinking agent (F). The cross-linking agent (F) is a component used to bond the aforementioned functional groups in the polymer component (A) to other compounds for cross-linking. By cross-linking in this way, the film for forming a thermosetting protective film can be adjusted The initial adhesion and cohesion.

作為交聯劑(F),例如可列舉:有機多元異氰酸酯化合物、有機多元亞胺化合物、金屬螯合物系交聯劑(具有金屬螯合物結構之交聯劑)、氮丙啶系交聯劑(具有氮丙啶基之交聯劑)等。Examples of the crosslinking agent (F) include: organic polyisocyanate compounds, organic polyimine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), aziridine crosslinking Agent (crosslinking agent with aziridinyl group) and the like.

作為前述有機多元異氰酸酯化合物,例如可列舉:芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物及脂環族多元異氰酸酯化合物(以下,有時將這些化合物統一簡稱為「芳香族多元異氰酸酯化合物等」);前述芳香族多元異氰酸酯化合物等之三聚物、異氰脲酸酯物及加合物;使前述芳香族多元異氰酸酯化合物等與多元醇化合物反應而獲得之末端異氰酸酯胺基甲酸酯預聚物等。前述「加合物」意指前述芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物或脂環族多元異氰酸酯化合物與乙二醇、丙二醇、新戊二醇、三羥甲基丙烷或蓖麻油等含低分子活性氫化合物而成之反應物。作為前述加合物的示例,可列舉如後述之三羥甲基丙烷之苯二甲基二異氰酸酯加成物等。另外,所謂「末端異氰酸酯胺基甲酸酯預聚物」,意指具有胺基甲酸酯鍵並且於分子的末端部具有異氰酸酯基之預聚物。Examples of the aforementioned organic polyvalent isocyanate compound include: aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, and alicyclic polyvalent isocyanate compounds (hereinafter, these compounds may be collectively referred to as "aromatic polyvalent isocyanate compounds, etc."); Trimers, isocyanurates and adducts of the aforementioned aromatic polyvalent isocyanate compounds, etc.; terminal isocyanate urethane prepolymers obtained by reacting the aforementioned aromatic polyvalent isocyanate compounds, etc. with polyol compounds, etc. . The aforementioned "adduct" means the aforementioned aromatic polyisocyanate compound, aliphatic polyisocyanate compound, or alicyclic polyisocyanate compound with a low content of ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil, etc. A reactant of molecular active hydrogen compounds. As an example of the said adduct, the xylylene diisocyanate adduct of trimethylolpropane etc. mentioned later can be mentioned. In addition, the term "terminal isocyanate urethane prepolymer" means a prepolymer having a urethane bond and an isocyanate group at the end of the molecule.

作為前述有機多元異氰酸酯化合物,更具體而言,例如可列舉:2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;1,3-苯二甲基二異氰酸酯;1,4-苯二甲基二異氰酸酯;二苯基甲烷-4,4'-二異氰酸酯;二苯基甲烷-2,4'-二異氰酸酯;3-甲基二苯基甲烷二異氰酸酯;六亞甲基二異氰酸酯;異佛爾酮二異氰酸酯;二環己基甲烷-4,4'-二異氰酸酯;二環己基甲烷-2,4'-二異氰酸酯;於三羥甲基丙烷等多元醇的全部或一部分羥基加成了甲苯二異氰酸酯、六亞甲基二異氰酸酯及苯二甲基二異氰酸酯之任1種或2種以上而成之化合物;離胺酸二異氰酸酯等。As the aforementioned organic polyvalent isocyanate compound, more specifically, for example, 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylylene diisocyanate Diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophor Ketone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; toluene diisocyanate is added to all or part of the hydroxyl groups of polyols such as trimethylolpropane Compounds of any one or more of isocyanate, hexamethylene diisocyanate and xylylene diisocyanate; lysine diisocyanate, etc.

作為前述有機多元亞胺化合物,例如可列舉:N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶甲醯胺)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、N,N'-甲苯-2,4-雙(1-氮丙啶甲醯胺)三伸乙基三聚氰胺等。As the aforementioned organic polyimine compound, for example, N,N'-diphenylmethane-4,4'-bis(1-aziridinemethamide), trimethylolpropane-tri-β-nitrogen Propidinyl propionate, tetramethylolmethane-tris-β-aziridinyl propionate, N,N'-toluene-2,4-bis(1-aziridinylmethamine) triethylene Based on melamine and so on.

於使用有機多元異氰酸酯化合物作為交聯劑(F)之情形時,作為聚合物成分(A),較佳為使用含羥基之聚合物。於交聯劑(F)具有異氰酸酯基,聚合物成分(A)具有羥基之情形時,藉由交聯劑(F)與聚合物成分(A)之反應,能夠將交聯結構簡便地導入至熱硬化性保護膜形成用膜中。When an organic polyvalent isocyanate compound is used as the crosslinking agent (F), it is preferable to use a hydroxyl group-containing polymer as the polymer component (A). When the crosslinking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, the crosslinking structure can be easily introduced into the In the film for forming a thermosetting protective film.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之交聯劑(F)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The composition (III-1) and the crosslinking agent (F) contained in the film for forming a thermosetting protective film may be one type or two or more types. In the case of two or more types, a combination of these And the ratio can be chosen arbitrarily.

於使用交聯劑(F)之情形時,組成物(III-1)中,交聯劑(F)的含量相對於聚合物成分(A)的含量100質量份,較佳為0.01質量份至20質量份,更佳為0.1質量份至10質量份,尤佳為0.5質量份至5質量份。藉由交聯劑(F)的前述含量為前述下限值以上,可更顯著地獲得由使用交聯劑(F)所帶來之效果。藉由交聯劑(F)的前述含量為前述上限值以下,可抑制交聯劑(F)之過量使用。In the case of using the crosslinking agent (F), the content of the crosslinking agent (F) in the composition (III-1) is 100 parts by mass relative to the content of the polymer component (A), preferably 0.01 parts by mass to 20 parts by mass, more preferably 0.1 parts by mass to 10 parts by mass, particularly preferably 0.5 parts by mass to 5 parts by mass. When the aforementioned content of the cross-linking agent (F) is more than the aforementioned lower limit, the effect of using the cross-linking agent (F) can be more remarkably obtained. When the aforementioned content of the cross-linking agent (F) is below the aforementioned upper limit, the excessive use of the cross-linking agent (F) can be suppressed.

[能量線硬化性樹脂(G)] 組成物(III-1)及熱硬化性保護膜形成用膜亦可含有能量線硬化性樹脂(G)。熱硬化性保護膜形成用膜藉由含有能量線硬化性樹脂(G),能夠藉由照射能量線而改變特性。[Energy ray curable resin (G)] The composition (III-1) and the film for forming a thermosetting protective film may contain an energy ray-curable resin (G). Since the film for forming a thermosetting protective film contains energy-ray-curable resin (G), its characteristics can be changed by energy-ray irradiation.

能量線硬化性樹脂(G)係使能量線硬化性化合物聚合(硬化)而獲得。 作為前述能量線硬化性化合物,例如可列舉分子內具有至少1個聚合性雙鍵之化合物,較佳為具有(甲基)丙烯醯基之丙烯酸酯系化合物。The energy ray curable resin (G) is obtained by polymerizing (curing) an energy ray curable compound. Examples of the aforementioned energy ray curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate-based compounds having a (meth)acryloyl group are preferred.

作為前述丙烯酸酯系化合物,例如可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯等含鏈狀脂肪族骨架之(甲基)丙烯酸酯;二(甲基)丙烯酸二環戊酯等含環狀脂肪族骨架之(甲基)丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯等聚伸烷基二醇(甲基)丙烯酸酯;寡酯(甲基)丙烯酸酯;(甲基)丙烯酸胺基甲酸酯低聚物;環氧改性(甲基)丙烯酸酯;前述聚伸烷基二醇(甲基)丙烯酸酯以外的聚醚(甲基)丙烯酸酯;衣康酸低聚物等。Examples of the acrylate-based compound include trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. Base) acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol two(meth)acrylate, 1,6-hexanediol two (Meth)acrylates and other (meth)acrylates containing chain aliphatic skeletons; dicyclopentyl di(meth)acrylates and other (meth)acrylates containing cyclic aliphatic skeletons; polyethylene glycol Di(meth)acrylate and other polyalkylene glycol (meth)acrylate; oligoester (meth)acrylate; (meth)acrylate urethane oligomer; epoxy modified (former Base) acrylate; polyether (meth)acrylate other than the aforementioned polyalkylene glycol (meth)acrylate; itaconic acid oligomer, etc.

前述能量線硬化性化合物的重量平均分子量較佳為100至30000,更佳為300至10000。The weight average molecular weight of the aforementioned energy ray curable compound is preferably 100 to 30,000, more preferably 300 to 10,000.

用於聚合之前述能量線硬化性化合物可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned energy ray curable compound used for polymerization may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之能量線硬化性樹脂(G)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The composition (III-1) and the energy ray curable resin (G) contained in the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, these The combination and ratio of can be selected arbitrarily.

於使用能量線硬化性樹脂(G)之情形時,組成物(III-1)中,能量線硬化性樹脂(G)的含量相對於組成物(III-1)的總質量之比例較佳為1質量%至95質量%,更佳為5質量%至90質量%,尤佳為10質量%至85質量%。In the case of using the energy ray curable resin (G), the ratio of the content of the energy ray curable resin (G) to the total mass of the composition (III-1) in the composition (III-1) is preferably 1% by mass to 95% by mass, more preferably 5% by mass to 90% by mass, and particularly preferably 10% by mass to 85% by mass.

[光聚合起始劑(H)] 於組成物(III-1)及熱硬化性保護膜形成用膜含有能量線硬化性樹脂(G)之情形時,為了使能量線硬化性樹脂(G)高效率地進行聚合反應,亦可含有光聚合起始劑(H)。[Photopolymerization initiator (H)] When the composition (III-1) and the film for forming a thermosetting protective film contain energy ray curable resin (G), in order to efficiently polymerize the energy ray curable resin (G), it may also contain Photopolymerization initiator (H).

作為組成物(III-1)中的光聚合起始劑(H),例如可列舉與上述之黏著劑組成物(I-1)所含有之光聚合起始劑相同的化合物。Examples of the photopolymerization initiator (H) in the composition (III-1) include the same compounds as the photopolymerization initiator contained in the above-mentioned adhesive composition (I-1).

組成物(III-1)及熱硬化性保護膜形成用膜所含有之光聚合起始劑(H)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The photopolymerization initiator (H) contained in the composition (III-1) and the film for forming a thermosetting protective film may be one type or two or more types. In the case of two or more types, these The combination and ratio of can be selected arbitrarily.

於使用光聚合起始劑(H)之情形時,組成物(III-1)中,光聚合起始劑(H)的含量相對於能量線硬化性樹脂(G)的含量100質量份,較佳為0.1質量份至20質量份,更佳為1質量份至10質量份,尤佳為2質量份至5質量份。In the case of using the photopolymerization initiator (H), in the composition (III-1), the content of the photopolymerization initiator (H) relative to the content of the energy ray curable resin (G) is 100 parts by mass. It is preferably from 0.1 part by mass to 20 parts by mass, more preferably from 1 part by mass to 10 parts by mass, and particularly preferably from 2 parts by mass to 5 parts by mass.

[著色劑(I)] 組成物(III-1)及熱硬化性保護膜形成用膜亦可含有著色劑(I)。 作為著色劑(I),例如可列舉無機系顏料、有機系顏料、有機系染料等公知的著色劑。[Colorant (I)] The composition (III-1) and the film for forming a thermosetting protective film may contain a coloring agent (I). As a coloring agent (I), well-known coloring agents, such as an inorganic type pigment, an organic type pigment, an organic type dye, etc. are mentioned, for example.

作為前述有機系顏料及有機系染料,例如可列舉:銨系色素、花青系色素、部花青系色素、克酮鎓(croconium)系色素、方酸鎓(squalilium)系色素、薁鎓系色素、聚次甲基系色素、萘醌系色素、吡喃鎓系色素、酞菁系色素、萘酞菁系色素、萘內醯胺系色素、偶氮系色素、縮合偶氮系色素、靛藍系色素、紫環酮(perinone)系色素、苝系色素、二噁嗪系色素、喹吖啶酮系色素、異吲哚啉酮系色素、喹啉黃(quinophthalone)系色素、吡咯系色素、硫代靛藍系色素、金屬錯合物系色素(金屬錯鹽染料)、二硫醇金屬錯合物系色素、吲哚酚系色素、三烯丙基甲烷系色素、蒽醌系色素、萘酚系色素、次甲基偶氮系色素、苯并咪唑酮系色素、皮蒽酮系色素及士林(threne)系色素等。Examples of the aforementioned organic pigments and organic dyes include: ammonium-based pigments, cyanine-based pigments, merocyanine-based pigments, croconium-based pigments, squalilium-based pigments, and azulenium-based pigments. Pigments, polymethine pigments, naphthoquinone pigments, pyrylium pigments, phthalocyanine pigments, naphthalocyanine pigments, naphthalene lactam pigments, azo pigments, condensed azo pigments, indigo Pigments, perinone pigments, perylene pigments, dioxazine pigments, quinacridone pigments, isoindolinone pigments, quinophthalone pigments, pyrrole pigments, Thioindigo dyes, metal complex dyes (metal complex salt dyes), dithiol metal complex dyes, indoxyphenol dyes, triallylmethane dyes, anthraquinone dyes, naphthol Pigments, methine azo pigments, benzimidazolone pigments, pyranthrone pigments, threne pigments, etc.

作為前述無機系顏料,例如可列舉:碳黑、鈷系色素、鐵系色素、鉻系色素、鈦系色素、釩系色素、鋯系色素、鉬系色素、釕系色素、鉑系色素、ITO(Indium Tin Oxide;氧化銦錫)系色素、ATO(Antimony Tin Oxide;氧化銻錫)系色素等。Examples of the aforementioned inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, ITO (Indium Tin Oxide; Indium Tin Oxide) based pigments, ATO (Antimony Tin Oxide; Antimony Tin Oxide) based pigments, etc.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之著色劑(I)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The coloring agent (I) contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, the combination of these and The ratio can be chosen arbitrarily.

於使用著色劑(I)之情形時,熱硬化性保護膜形成用膜中的著色劑(I)的含量根據目的適宜調節即可。例如,藉由調節熱硬化性保護膜形成用膜中的著色劑(I)的含量來調節熱硬化性保護膜形成用膜的透光性,則能夠調節對熱硬化性保護膜形成用膜進行雷射印字之情形時的印字視認性。另外,藉由調節熱硬化性保護膜形成用膜中的著色劑(I)的含量,亦能夠提高保護膜的設計性,或使得半導體晶圓的內面的研削痕跡不易見。若考慮這些方面,則組成物(III-1)中,著色劑(I)的含量相對於溶媒以外的全部成分的總含量之比例(亦即,熱硬化性保護膜形成用膜中的著色劑(I)的含量相對於熱硬化性保護膜形成用膜的總質量之比例)較佳為0.01質量%至10質量%,更佳為0.01質量%至7.5質量%,尤佳為0.01質量%至5質量%。藉由前述比例為前述下限值以上,可更顯著地獲得由使用著色劑(I)所帶來之效果。藉由前述比例為前述上限值以下,可抑制熱硬化性保護膜形成用膜的透光性過度降低。When using the coloring agent (I), the content of the coloring agent (I) in the film for forming a thermosetting protective film may be appropriately adjusted according to the purpose. For example, by adjusting the content of the coloring agent (I) in the film for forming a thermosetting protective film to adjust the light transmittance of the film for forming a thermosetting protective film, it is possible to adjust the performance of the film for forming a thermosetting protective film. The visibility of printing in the case of laser printing. In addition, by adjusting the content of the coloring agent (I) in the film for forming a thermosetting protective film, it is also possible to improve the design of the protective film or make it difficult to see the grinding marks on the inner surface of the semiconductor wafer. Considering these aspects, the ratio of the content of the colorant (I) in the composition (III-1) to the total content of all components other than the solvent (that is, the coloring agent in the film for forming a thermosetting protective film The ratio of the content of (I) to the total mass of the film for forming a thermosetting protective film) is preferably 0.01% by mass to 10% by mass, more preferably 0.01% by mass to 7.5% by mass, and particularly preferably 0.01% by mass to 5 mass%. When the aforementioned ratio is greater than or equal to the aforementioned lower limit, the effect brought about by the use of the colorant (I) can be more remarkably obtained. When the aforementioned ratio is equal to or less than the aforementioned upper limit, it is possible to suppress an excessive decrease in the light transmittance of the film for forming a thermosetting protective film.

[通用添加劑(J)] 組成物(III-1)及熱硬化性保護膜形成用膜亦可在無損本發明的效果之範圍內,含有通用添加劑(J)。 通用添加劑(J)可為公知的化合物,可根據目的任意選擇,並無特別限定,作為較佳的通用添加劑(J),例如可列舉:塑化劑、抗靜電劑、抗氧化劑、吸氣劑(gettering agent)等。[General additives (J)] The composition (III-1) and the film for forming a thermosetting protective film may contain a general-purpose additive (J) within a range that does not impair the effect of the present invention. The general additives (J) can be well-known compounds, which can be arbitrarily selected according to the purpose, and are not particularly limited. Preferred general additives (J) include, for example, plasticizers, antistatic agents, antioxidants, and getters. (gettering agent) and so on.

組成物(III-1)及熱硬化性保護膜形成用膜所含有之通用添加劑(J)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。 組成物(III-1)及熱硬化性保護膜形成用膜中的通用添加劑(J)的含量並無特別限定,根據目的適宜選擇即可。The general additives (J) contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one type or two or more types. In the case of two or more types, the combination of these and The ratio can be chosen arbitrarily. The content of the general additive (J) in the composition (III-1) and the film for forming a thermosetting protective film is not particularly limited, and may be appropriately selected according to the purpose.

[溶媒] 組成物(III-1)較佳為進而含有溶媒。含有溶媒之組成物(III-1)的操作性良好。 前述溶媒並無特別限定,作為較佳的前述溶媒,例如可列舉與上述之黏著劑組成物(I-1)所含有之溶媒相同的化合物。 組成物(III-1)所含有之溶媒可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。[Solvent] The composition (III-1) preferably further contains a solvent. The solvent-containing composition (III-1) has good operability. The aforementioned solvent is not particularly limited, and preferable examples of the aforementioned solvent include the same compounds as the solvent contained in the aforementioned adhesive composition (I-1). The solvent contained in the composition (III-1) may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

就能夠將組成物(III-1)中的含有成分更均勻地混合之方面而言,組成物(III-1)所含有之溶媒較佳為甲基乙基酮等。The solvent contained in the composition (III-1) is preferably methyl ethyl ketone or the like in terms of allowing the components contained in the composition (III-1) to be mixed more uniformly.

組成物(III-1)中的溶媒的含量並無特別限定,例如根據溶媒以外的成分的種類適宜選擇即可。The content of the solvent in the composition (III-1) is not particularly limited, and may be appropriately selected according to the types of components other than the solvent, for example.

[熱硬化性保護膜形成用組成物之製造方法] 組成物(III-1)等熱硬化性保護膜形成用組成物藉由調配用以構成該組成物之各成分而獲得。 熱硬化性保護膜形成用組成物例如除調配成分的種類不同之方面以外,可利用與上文說明之黏著劑組成物之情形相同的方法進行製造。[Manufacturing method of composition for forming thermosetting protective film] The composition for forming a thermosetting protective film, such as the composition (III-1), is obtained by blending each component that constitutes the composition. The composition for forming a thermosetting protective film can be manufactured by the same method as that of the adhesive composition described above, except for the point that the types of the compounding components are different, for example.

○能量線硬化性保護膜形成用膜 關於將能量線硬化性保護膜形成用膜貼附於半導體晶圓的內面並使之能量線硬化而形成保護膜時的硬化條件,只要保護膜成為充分地發揮該保護膜的功能之程度的硬化度,則並無特別限定,根據能量線硬化性保護膜形成用膜的種類適宜選擇即可。 例如,能量線硬化性保護膜形成用膜之能量線硬化時的能量線的照度較佳為60mW/cm2 至320mW/cm2 。並且,前述硬化時的能量線的光量較佳為100mW/cm2 至1000mJ/cm2○Film for forming energy ray curable protective film Regarding the curing conditions when the energy ray curable protective film forming film is attached to the inner surface of a semiconductor wafer and the energy ray is cured to form a protective film, as long as the protective film is sufficient The degree of curing to achieve the function of the protective film is not particularly limited, and may be appropriately selected according to the type of the energy ray curable protective film forming film. For example, the illuminance of the energy ray when the energy ray of the film for forming an energy ray curable protective film is cured is preferably 60 mW/cm 2 to 320 mW/cm 2 . In addition, the light amount of the energy ray during curing is preferably 100 mW/cm 2 to 1000 mJ/cm 2 .

作為能量線硬化性保護膜形成用膜,例如可列舉含有能量線硬化性成分(a)之膜,較佳為含有能量線硬化性成分(a)及填充材料之膜。 能量線硬化性保護膜形成用膜中,能量線硬化性成分(a)較佳為未硬化,較佳為具有黏著性,更佳為未硬化且具有黏著性。Examples of the film for forming an energy ray curable protective film include a film containing an energy ray curable component (a), and a film containing an energy ray curable component (a) and a filler is preferred. In the film for forming an energy ray curable protective film, the energy ray curable component (a) is preferably uncured, preferably has adhesiveness, and more preferably has uncured and adhesiveness.

[能量線硬化性保護膜形成用組成物(IV-1)] 作為較佳的能量線硬化性保護膜形成用組成物,例如可列舉含有前述能量線硬化性成分(a)之能量線硬化性保護膜形成用組成物(IV-1)(本說明書中,有時僅簡稱為「組成物(IV-1)」)等。[Composition for forming energy ray curable protective film (IV-1)] As a preferable composition for forming an energy ray curable protective film, for example, a composition (IV-1) for forming an energy ray curable protective film containing the aforementioned energy ray curable component (a) (in this specification, there is Sometimes it is simply referred to as "Composition (IV-1)") and so on.

[能量線硬化性成分(a)] 能量線硬化性成分(a)係藉由照射能量線而硬化之成分,該成分用以對能量線硬化性保護膜形成用膜賦予造膜性或可撓性等,並且於硬化後形成硬質的保護膜。 作為能量線硬化性成分(a),例如可列舉:具有能量線硬化性基且重量平均分子量為80000至2000000之聚合物(a1)、及具有能量線硬化性基且分子量為100至80000之化合物(a2)。前述聚合物(a1)可至少一部分藉由交聯劑進行交聯,亦可為未經交聯之物。[Energy ray hardening component (a)] The energy-ray curable component (a) is a component that is cured by irradiating energy rays. The component is used to impart film-forming properties or flexibility to the energy-ray-curable protective film forming film, and to form a hard surface after curing. Protective film. Examples of the energy ray curable component (a) include: a polymer (a1) having an energy ray curable group and a weight average molecular weight of 80,000 to 2,000,000, and a compound having an energy ray curable group and a molecular weight of 100 to 80,000 (a2). The aforementioned polymer (a1) may be cross-linked at least in part by a cross-linking agent, or may be an uncross-linked product.

[具有能量線硬化性基且重量平均分子量為80000至2000000之聚合物(a1)] 作為具有能量線硬化性基且重量平均分子量為80000至2000000之聚合物(a1),例如可列舉丙烯酸樹脂(a1-1),該丙烯酸樹脂(a1-1)係使丙烯酸聚合物(a11)與能量線硬化性化合物(a12)進行反應而成,該丙烯酸聚合物(a11)具有可與其他化合物所具有之基反應之官能基,該能量線硬化性化合物(a12)具有與前述官能基反應之基及能量線硬化性雙鍵等能量線硬化性基。[Polymer (a1) having an energy-ray curable base and a weight average molecular weight of 80,000 to 2,000,000] As the polymer (a1) having an energy-ray curable group and having a weight average molecular weight of 80,000 to 2,000,000, for example, acrylic resin (a1-1) can be cited. The acrylic resin (a1-1) is made of acrylic polymer (a11) and An energy ray-curable compound (a12) is formed by reacting, the acrylic polymer (a11) has a functional group that can react with a group possessed by other compounds, and the energy-beam-curable compound (a12) has a functional group that reacts with the aforementioned functional group Energy-ray-curable groups such as energy-ray-curable double bonds.

作為可與其他化合物所具有之基反應之前述官能基,例如可列舉:羥基、羧基、胺基、取代胺基(胺基的1個或2個氫原子由氫原子以外的基取代而成之基)、環氧基等。但是,就防止半導體晶圓或半導體晶片等的電路腐蝕之方面而言,前述官能基較佳為羧基以外的基。 這些之中,前述官能基較佳為羥基。Examples of the aforementioned functional groups that can react with groups possessed by other compounds include hydroxyl groups, carboxyl groups, amino groups, and substituted amino groups (one or two hydrogen atoms of the amino group are substituted with groups other than hydrogen atoms. Group), epoxy group and the like. However, in terms of preventing corrosion of a semiconductor wafer or a circuit of a semiconductor wafer, the aforementioned functional group is preferably a group other than a carboxyl group. Among these, the aforementioned functional group is preferably a hydroxyl group.

・具有官能基之丙烯酸聚合物(a11) 作為具有前述官能基之丙烯酸聚合物(a11),例如可列舉:使具有前述官能基之丙烯酸單體與不具有前述官能基之丙烯酸單體進行共聚而成之共聚物;亦可為除這些單體以外,進而使丙烯酸單體以外的單體(非丙烯酸單體)進行共聚而成之共聚物。 另外,前述丙烯酸聚合物(a11)可為無規共聚物,亦可為嵌段共聚物,關於聚合方法,亦可採用公知的方法。・Acrylic polymer with functional group (a11) As the acrylic polymer (a11) having the aforementioned functional group, for example, a copolymer obtained by copolymerizing an acrylic monomer having the aforementioned functional group and an acrylic monomer not having the aforementioned functional group may be used; In addition to the monomer, a copolymer formed by copolymerizing monomers other than acrylic monomers (non-acrylic monomers). In addition, the aforementioned acrylic polymer (a11) may be a random copolymer or a block copolymer. Regarding the polymerization method, a known method may also be adopted.

作為具有前述官能基之丙烯酸單體,例如可列舉:含羥基之單體、含羧基之單體、含胺基之單體、含取代胺基之單體、含環氧基之單體等。Examples of the acrylic monomer having the aforementioned functional group include hydroxyl group-containing monomers, carboxyl group-containing monomers, amine group-containing monomers, substituted amine group-containing monomers, epoxy group-containing monomers, and the like.

作為前述含羥基之單體,例如可列舉與構成上述之黏著劑組成物(I-1)所含有之黏著性樹脂(I-1a)之含羥基之單體相同的單體。Examples of the aforementioned hydroxyl-containing monomer include the same monomers as the hydroxyl-containing monomer constituting the adhesive resin (I-1a) contained in the adhesive composition (I-1) described above.

作為前述含羧基之單體,例如可列舉:(甲基)丙烯酸、丁烯酸等乙烯性不飽和單羧酸(具有乙烯性不飽和鍵之單羧酸);富馬酸、衣康酸、馬來酸、檸康酸等乙烯性不飽和二羧酸(具有乙烯性不飽和鍵之二羧酸);前述乙烯性不飽和二羧酸之酐;甲基丙烯酸2-羧基乙酯等(甲基)丙烯酸羧基烷基酯等。Examples of the aforementioned carboxyl group-containing monomer include: ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having ethylenically unsaturated bonds) such as (meth)acrylic acid and crotonic acid; fumaric acid, itaconic acid, Maleic acid, citraconic acid and other ethylenically unsaturated dicarboxylic acids (dicarboxylic acids with ethylenically unsaturated bonds); the anhydrides of the aforementioned ethylenically unsaturated dicarboxylic acids; 2-carboxyethyl methacrylate, etc. (formula Group) carboxyalkyl acrylate and the like.

具有前述官能基之丙烯酸單體較佳為含羥基之單體。The acrylic monomer having the aforementioned functional group is preferably a hydroxyl-containing monomer.

構成前述丙烯酸聚合物(a11)之具有前述官能基之丙烯酸單體可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The acrylic monomer having the aforementioned functional group constituting the aforementioned acrylic polymer (a11) may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

作為不具有前述官能基之丙烯酸單體,例如可列舉與構成上述之聚合物成分(A)中的丙烯酸樹脂之(甲基)丙烯酸酯(構成烷基酯之烷基為碳數為1至18之鏈狀結構之(甲基)丙烯酸烷基酯)相同的丙烯酸單體。As an acrylic monomer that does not have the aforementioned functional group, for example, a (meth)acrylate (meth)acrylate that composes the acrylic resin in the above-mentioned polymer component (A) (the alkyl group that composes the alkyl ester has a carbon number of 1 to 18) The chain structure of (meth)acrylic acid alkyl ester) is the same as the acrylic monomer.

另外,作為不具有前述官能基之丙烯酸單體,例如亦可列舉:(甲基)丙烯酸甲氧基甲酯、(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基甲酯、(甲基)丙烯酸乙氧基乙酯等含烷氧基烷基之(甲基)丙烯酸酯;包含(甲基)丙烯酸苯酯等(甲基)丙烯酸芳基酯等之具有芳香族基之(甲基)丙烯酸酯;非交聯性之(甲基)丙烯醯胺及其衍生物;(甲基)丙烯酸N,N-二甲胺基乙酯、(甲基)丙烯酸N,N-二甲胺基丙酯等具有非交聯性三級胺基之(甲基)丙烯酸酯等。In addition, examples of acrylic monomers that do not have the aforementioned functional group include: methoxymethyl (meth)acrylate, methoxyethyl (meth)acrylate, and ethoxymethyl (meth)acrylate , (Meth) ethoxy ethyl acrylate and other (meth) acrylates containing alkoxy alkyl groups; those containing aryl (meth) acrylates such as phenyl (meth) acrylate, etc., which have aromatic groups (Meth)acrylate; non-crosslinkable (meth)acrylamide and its derivatives; (meth)acrylic acid N,N-dimethylaminoethyl, (meth)acrylic acid N,N-di (Meth)acrylates with non-crosslinkable tertiary amino groups, such as methylaminopropyl.

構成前述丙烯酸聚合物(a11)之不具有前述官能基之丙烯酸單體可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The acrylic monomer which does not have the said functional group which comprises the said acrylic polymer (a11) may be only 1 type, and may be 2 or more types. When it is 2 or more types, these combination and ratio can be selected arbitrarily.

作為前述非丙烯酸單體,例如可列舉:乙烯、降冰片烯等烯烴;乙酸乙烯酯;苯乙烯等。 構成前述丙烯酸聚合物(a11)之前述非丙烯酸單體可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。Examples of the aforementioned non-acrylic monomers include olefins such as ethylene and norbornene; vinyl acetate; styrene and the like. The aforementioned non-acrylic monomer constituting the aforementioned acrylic polymer (a11) may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述丙烯酸聚合物(a11)中,由具有前述官能基之丙烯酸單體衍生之構成單元的量相對於構成該丙烯酸聚合物(a11)之構成單元的總量之比例(含量)較佳為0.1質量%至50質量%,更佳為1質量%至40質量%,尤佳為3質量%至30質量%。藉由前述比例為此種範圍,能夠將由前述丙烯酸聚合物(a11)與前述能量線硬化性化合物(a12)之共聚所獲得之前述丙烯酸樹脂(a1-1)中能量線硬化性基的含量容易地調節為使保護膜的硬化程度較佳之範圍。In the aforementioned acrylic polymer (a11), the ratio (content) of the amount of constituent units derived from the acrylic monomer having the aforementioned functional group to the total amount of constituent units constituting the acrylic polymer (a11) is preferably 0.1 mass % To 50% by mass, more preferably 1% to 40% by mass, particularly preferably 3% to 30% by mass. When the aforementioned ratio is in this range, the content of the energy-ray-curable group in the acrylic resin (a1-1) obtained by the copolymerization of the aforementioned acrylic polymer (a11) and the aforementioned energy-ray-curable compound (a12) can be easily The ground is adjusted to a better range for the degree of hardening of the protective film.

構成前述丙烯酸樹脂(a1-1)之前述丙烯酸聚合物(a11)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The acrylic polymer (a11) constituting the acrylic resin (a1-1) may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

組成物(IV-1)中,丙烯酸樹脂(a1-1)的含量相對於溶媒以外的成分的總含量之比例(亦即,能量線硬化性保護膜形成用膜中的丙烯酸樹脂(a1-1)的含量相對於前述膜的總質量之比例)較佳為1質量%至70質量%,更佳為5質量%至60質量%,尤佳為10質量%至50質量%。In the composition (IV-1), the ratio of the content of the acrylic resin (a1-1) to the total content of components other than the solvent (that is, the acrylic resin (a1-1) in the film for forming an energy ray curable protective film The ratio of the content of) to the total mass of the aforementioned film) is preferably 1% to 70% by mass, more preferably 5% to 60% by mass, and particularly preferably 10% to 50% by mass.

・能量線硬化性化合物(a12) 前述能量線硬化性化合物(a12)較佳為具有選自由異氰酸酯基、環氧基及羧基所組成之群組中的1種或2種以上作為可與前述丙烯酸聚合物(a11)所具有之官能基反應之基,更佳為具有異氰酸酯基作為前述基。於前述能量線硬化性化合物(a12)例如具有異氰酸酯基作為前述基之情形時,該異氰酸酯基與具有羥基作為前述官能基之丙烯酸聚合物(a11)的該羥基容易反應。・Energy ray curable compound (a12) The aforementioned energy ray curable compound (a12) preferably has one or more selected from the group consisting of an isocyanate group, an epoxy group, and a carboxyl group as a function that can be combined with the aforementioned acrylic polymer (a11) The group reacting with the group preferably has an isocyanate group as the aforementioned group. When the energy ray curable compound (a12) has an isocyanate group as the aforementioned group, for example, the isocyanate group and the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group easily react.

前述能量線硬化性化合物(a12)於1分子中所具有之前述能量線硬化性基的數量並無特別限定,例如可考慮對目標保護膜所要求之收縮率等物性而適宜選擇。 例如,前述能量線硬化性化合物(a12)較佳為於1分子中具有1個至5個前述能量線硬化性基,更佳為具有1個至3個。The number of energy ray curable groups contained in the energy ray curable compound (a12) per molecule is not particularly limited. For example, it can be appropriately selected in consideration of physical properties such as shrinkage rate required for the target protective film. For example, the aforementioned energy-ray-curable compound (a12) preferably has 1 to 5 of the aforementioned energy-ray-curable group in one molecule, and more preferably has 1 to 3.

作為前述能量線硬化性化合物(a12),例如可列舉:異氰酸2-甲基丙烯醯氧基乙酯、間-異丙烯基-α,α-二甲基苄基異氰酸酯、甲基丙烯醯基異氰酸酯、異氰酸烯丙酯、異氰酸1,1-(雙丙烯醯氧基甲基)乙酯;藉由二異氰酸酯化合物或多異氰酸酯化合物與(甲基)丙烯酸羥基乙酯之反應而獲得之丙烯醯基單異氰酸酯化合物;藉由二異氰酸酯化合物或多異氰酸酯化合物、多元醇化合物及(甲基)丙烯酸羥基乙酯之反應而獲得之丙烯醯基單異氰酸酯化合物等。 這些之中,前述能量線硬化性化合物(a12)較佳為異氰酸2-甲基丙烯醯氧基乙酯。Examples of the energy ray curable compound (a12) include: 2-methacryloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, and methacrylic acid Isocyanate, allyl isocyanate, 1,1-(bisacryloxymethyl) ethyl isocyanate; by the reaction of a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate Acrylic monoisocyanate compound obtained; Acrylic monoisocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound, polyol compound and hydroxyethyl (meth)acrylate. Among these, the aforementioned energy ray curable compound (a12) is preferably 2-methacryloxyethyl isocyanate.

構成前述丙烯酸樹脂(a1-1)之前述能量線硬化性化合物(a12)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned energy ray curable compound (a12) constituting the aforementioned acrylic resin (a1-1) may be only one type or two or more types, and when there are two or more types, the combination and ratio of these can be arbitrarily selected.

前述丙烯酸樹脂(a1-1)中,源自前述能量線硬化性化合物(a12)之能量線硬化性基的含量相對於源自前述丙烯酸聚合物(a11)之前述官能基的含量之比例較佳為20莫耳%至120莫耳%,更佳為35莫耳%至100莫耳%,尤佳為50莫耳%至100莫耳%。藉由前述含量之比例為此種範圍,保護膜的接著力變得更大。此外,於前述能量線硬化性化合物(a12)為一官能(於1分子中具有1個前述基)化合物之情形時,前述含量之比例的上限值成為100莫耳%,但於前述能量線硬化性化合物(a12)為多官能(於1分子中具有2個以上之前述基)化合物之情形時,前述含量之比例的上限值有時超過100莫耳%。In the acrylic resin (a1-1), the ratio of the content of the energy ray curable group derived from the energy ray curable compound (a12) to the content of the functional group derived from the acrylic polymer (a11) is preferable It is 20 mol% to 120 mol%, more preferably 35 mol% to 100 mol%, and particularly preferably 50 mol% to 100 mol%. When the aforementioned content ratio is in this range, the adhesive force of the protective film becomes greater. In addition, when the aforementioned energy ray curable compound (a12) is a monofunctional (having one aforementioned group in a molecule) compound, the upper limit of the aforementioned content ratio becomes 100 mol%, but the aforementioned energy ray curable compound (a12) When the curable compound (a12) is a polyfunctional (having two or more of the aforementioned groups in one molecule) compound, the upper limit of the ratio of the aforementioned content may exceed 100 mol%.

前述聚合物(a1)的重量平均分子量(Mw)較佳為100000至2000000,更佳為300000至1500000。 此處,所謂「重量平均分子量」,如上文所說明。The weight average molecular weight (Mw) of the aforementioned polymer (a1) is preferably 100,000 to 2,000,000, more preferably 300,000 to 1,500,000. Here, the so-called "weight average molecular weight" is as described above.

於前述聚合物(a1)的至少一部分藉由交聯劑進行交聯之情形時,前述聚合物(a1)可為使不相當於上述說明之構成前述丙烯酸聚合物(a11)之任一單體且具有與交聯劑反應之基之單體進行聚合而在與前述交聯劑反應之基中進行交聯所得者,亦可在源自前述能量線硬化性化合物(a12)之與前述官能基反應之基中進行交聯所得者。When at least a part of the aforementioned polymer (a1) is crosslinked by a crosslinking agent, the aforementioned polymer (a1) may be any monomer that does not correspond to the aforementioned acrylic polymer (a11) And the monomer having a group that reacts with the crosslinking agent is polymerized and crosslinked in the group that reacts with the crosslinking agent, it may also be derived from the energy ray curable compound (a12) and the aforementioned functional group. The reaction base is cross-linked.

組成物(IV-1)及能量線硬化性保護膜形成用膜所含有之前述聚合物(a1)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned polymer (a1) contained in the composition (IV-1) and the film for forming an energy ray curable protective film may be only one type or two or more types. In the case of two or more types, these The combination and ratio can be selected arbitrarily.

[具有能量線硬化性基且分子量為100至80000之化合物(a2)] 作為具有能量線硬化性基且分子量為100至80000之化合物(a2)中的前述能量線硬化性基,可列舉包含能量線硬化性雙鍵之基,作為較佳的該基,可列舉(甲基)丙烯醯基、乙烯基等。[Compound (a2) having an energy-ray curable group and having a molecular weight of 100 to 80,000] As the aforementioned energy-ray-curable group in the compound (a2) having an energy-ray-curable group and a molecular weight of 100 to 80,000, a group containing an energy-ray-curable double bond may be mentioned, and as a preferable group, (former) Base) acryloyl, vinyl and the like.

前述化合物(a2)只要滿足上述條件,則並無特別限定,可列舉:具有能量線硬化性基之低分子量化合物、具有能量線硬化性基之環氧樹脂、具有能量線硬化性基之酚樹脂等。The aforementioned compound (a2) is not particularly limited as long as it satisfies the above conditions, and examples include low molecular weight compounds having energy ray curable groups, epoxy resins having energy ray curable groups, and phenol resins having energy ray curable groups. Wait.

前述化合物(a2)中,作為具有能量線硬化性基之低分子量化合物,例如可列舉多官能之單體或低聚物等,較佳為具有(甲基)丙烯醯基之丙烯酸酯系化合物。 作為前述丙烯酸酯系化合物,例如可列舉:甲基丙烯酸2-羥基-3-(甲基)丙烯醯氧基丙酯、聚乙二醇二(甲基)丙烯酸酯、丙氧基化乙氧基化雙酚A二(甲基)丙烯酸酯、2,2-雙[4-((甲基)丙烯醯氧基聚乙氧基)苯基]丙烷、乙氧基化雙酚A二(甲基)丙烯酸酯、2,2-雙[4-((甲基)丙烯醯氧基二乙氧基)苯基]丙烷、9,9-雙[4-(2-(甲基)丙烯醯氧基乙氧基)苯基]茀、2,2-雙[4-((甲基)丙烯醯氧基聚丙氧基)苯基]丙烷、三環癸烷二甲醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、二丙二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、聚四亞甲基二醇二(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、2,2-雙[4-((甲基)丙烯醯氧基乙氧基)苯基]丙烷、新戊二醇二(甲基)丙烯酸酯、乙氧基化聚丙二醇二(甲基)丙烯酸酯、2-羥基-1,3-二(甲基)丙烯醯氧基丙烷等2官能(甲基)丙烯酸酯;異氰脲酸三(2-(甲基)丙烯醯氧基乙基)酯、ε-己內酯改性異氰脲酸三-(2-(甲基)丙烯醯氧基乙基)酯、乙氧基化甘油三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯、乙氧基化季戊四醇四(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇聚(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯;(甲基)丙烯酸胺基甲酸酯低聚物等多官能(甲基)丙烯酸酯低聚物等。Among the aforementioned compounds (a2), examples of the low-molecular-weight compound having an energy ray-curable group include polyfunctional monomers or oligomers, and preferably acrylate-based compounds having a (meth)acryloyl group. Examples of the acrylate-based compound include: 2-hydroxy-3-(meth)acryloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, and propoxylated ethoxy Bisphenol A bis(meth)acrylate, 2,2-bis[4-((meth)acryloyloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A bis(methyl) )Acrylate, 2,2-bis[4-((meth)acryloyloxydiethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acryloyloxy) Ethoxy) phenyl] 茀, 2,2-bis[4-((meth)acryloyloxypolypropoxy)phenyl]propane, tricyclodecane dimethanol di(meth)acrylate, 1 , 10-decanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate ) Acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polytetramethylene glycol di(meth)acrylate, ethylene glycol di(meth)acrylate, Diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxyethoxy)phenyl]propane, Neopentyl glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 2-hydroxy-1,3-bis(meth)acryloxypropane and other bifunctional (methyl) ) Acrylate; Tris(2-(meth)acryloyloxyethyl) isocyanurate, ε-caprolactone modified isocyanurate tris-(2-(meth)acryloyloxyethyl) Base) ester, ethoxylated glycerol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, di-trimethylolpropane tetra(methyl) ) Acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol poly(meth)acrylate, dipentaerythritol hexa(meth)acrylate, etc. (Meth)acrylate; (meth)acrylate urethane oligomers and other multifunctional (meth)acrylate oligomers.

前述化合物(a2)中,作為具有能量線硬化性基之環氧樹脂、具有能量線硬化性基之酚樹脂,例如可使用「日本特開2013-194102號公報」之段落0043等中所記載之樹脂。此種樹脂亦相當於構成後述之熱硬化性成分之樹脂,但本發明中視作前述化合物(a2)。Among the aforementioned compounds (a2), as an epoxy resin having an energy ray curable group and a phenol resin having an energy ray curable group, for example, the one described in paragraph 0043 of "JP 2013-194102 A" can be used. Resin. Such resin is also equivalent to the resin constituting the thermosetting component described later, but is regarded as the aforementioned compound (a2) in the present invention.

前述化合物(a2)的重量平均分子量較佳為100至30000,更佳為300至10000。The weight average molecular weight of the aforementioned compound (a2) is preferably 100 to 30,000, more preferably 300 to 10,000.

組成物(IV-1)及能量線硬化性保護膜形成用膜所含有之前述化合物(a2)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned compound (a2) contained in the composition (IV-1) and the film for forming an energy ray curable protective film may be one type or two or more types. In the case of two or more types, a combination of these And the ratio can be chosen arbitrarily.

[不具有能量線硬化性基之聚合物(b)] 於組成物(IV-1)及能量線硬化性保護膜形成用膜含有前述化合物(a2)作為前述能量線硬化性成分(a)之情形時,較佳為亦進而含有不具有能量線硬化性基之聚合物(b)。 前述聚合物(b)可至少一部分藉由交聯劑進行交聯,亦可為未經交聯之物。[Polymer without energy ray curable base (b)] When the composition (IV-1) and the film for forming an energy ray curable protective film contain the aforementioned compound (a2) as the aforementioned energy ray curable component (a), it is preferable to further contain the non-energy ray curable component (a). Base polymer (b). The aforementioned polymer (b) may be cross-linked at least partially by a cross-linking agent, or may be an uncross-linked product.

作為不具有能量線硬化性基之聚合物(b),例如可列舉:丙烯酸聚合物、苯氧基樹脂、胺基甲酸酯樹脂、聚酯、橡膠系樹脂、丙烯酸胺基甲酸酯樹脂等。 這些之中,前述聚合物(b)較佳為丙烯酸聚合物(以下,有時簡稱為「丙烯酸聚合物(b-1)」)。Examples of the polymer (b) that does not have an energy-ray curable group include acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber-based resins, acrylic urethane resins, etc. . Among these, the aforementioned polymer (b) is preferably an acrylic polymer (hereinafter, abbreviated as "acrylic polymer (b-1)" in some cases).

丙烯酸聚合物(b-1)可為公知的聚合物,例如可為1種丙烯酸單體之均聚物,亦可為2種以上之丙烯酸單體之共聚物,還可為1種或2種以上之丙烯酸單體與1種或2種以上之丙烯酸單體以外的單體(非丙烯酸單體)之共聚物。The acrylic polymer (b-1) may be a well-known polymer, for example, it may be a homopolymer of one type of acrylic monomer, or a copolymer of two or more types of acrylic monomers, or one or two types. A copolymer of the above acrylic monomers and one or more monomers other than acrylic monomers (non-acrylic monomers).

作為構成丙烯酸聚合物(b-1)之前述丙烯酸單體,例如可列舉:(甲基)丙烯酸烷基酯、具有環狀骨架之(甲基)丙烯酸酯、含縮水甘油基之(甲基)丙烯酸酯、含羥基之(甲基)丙烯酸酯、含取代胺基之(甲基)丙烯酸酯等。此處,所謂「取代胺基」如上文所說明。Examples of the aforementioned acrylic monomers constituting the acrylic polymer (b-1) include alkyl (meth)acrylates, (meth)acrylates having a cyclic skeleton, and (meth) glycidyl groups. Acrylate, hydroxyl-containing (meth)acrylate, substituted amino group-containing (meth)acrylate, etc. Here, the so-called "substituted amino group" is as described above.

作為前述(甲基)丙烯酸烷基酯,例如可列舉與上文說明之構成丙烯酸聚合物(a11)之不具有前述官能基之丙烯酸單體(構成烷基酯之烷基為碳數為1至18之鏈狀結構之(甲基)丙烯酸烷基酯等)相同的化合物。As the aforementioned (meth)acrylic acid alkyl ester, for example, the acrylic monomer that does not have the aforementioned functional group that constitutes the acrylic polymer (a11) explained above (the alkyl group that constitutes the alkyl ester has a carbon number of 1 to The chain structure of 18 (meth)acrylic acid alkyl ester, etc.) is the same compound.

作為前述具有環狀骨架之(甲基)丙烯酸酯,例如可列舉:(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯等(甲基)丙烯酸環烷基酯;(甲基)丙烯酸苄酯等(甲基)丙烯酸芳烷基酯;(甲基)丙烯酸二環戊烯酯等(甲基)丙烯酸環烯酯;(甲基)丙烯酸二環戊烯氧基乙酯等(甲基)丙烯酸環烯氧基烷基酯等。Examples of (meth)acrylates having a cyclic skeleton include cycloalkyl (meth)acrylates such as isobornyl (meth)acrylate and dicyclopentyl (meth)acrylate; (meth) ) Aralkyl (meth)acrylates such as benzyl acrylate; cycloalkenyl (meth)acrylates such as dicyclopentenyl (meth)acrylate; dicyclopentenoxyethyl (meth)acrylate, etc. ( Cycloalkenyloxyalkyl meth)acrylate and the like.

作為前述含縮水甘油基之(甲基)丙烯酸酯,例如可列舉(甲基)丙烯酸縮水甘油酯等。 作為前述含羥基之(甲基)丙烯酸酯,例如可列舉:(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等。 作為前述含取代胺基之(甲基)丙烯酸酯,例如可列舉(甲基)丙烯酸N-甲基胺基乙酯等。As said glycidyl group-containing (meth)acrylate, glycidyl (meth)acrylate etc. are mentioned, for example. As the aforementioned hydroxyl group-containing (meth)acrylates, for example, hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, (methyl) ) 3-hydroxypropyl acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, etc. Examples of the aforementioned substituted amino group-containing (meth)acrylate include N-methylaminoethyl (meth)acrylate and the like.

作為構成丙烯酸聚合物(b-1)之前述非丙烯酸單體,例如可列舉:乙烯、降冰片烯等烯烴;乙酸乙烯酯;苯乙烯等。Examples of the non-acrylic monomer constituting the acrylic polymer (b-1) include olefins such as ethylene and norbornene; vinyl acetate; styrene and the like.

作為至少一部分藉由交聯劑進行交聯且不具有前述能量線硬化性基之聚合物(b),例如可列舉前述聚合物(b)中的反應性官能基與交聯劑反應而成之聚合物。 前述反應性官能基根據交聯劑的種類等適宜選擇即可,並無特別限定。例如,於交聯劑為多異氰酸酯化合物之情形時,作為前述反應性官能基,可列舉羥基、羧基、胺基等,這些之中,較佳為與異氰酸酯基之反應性高之羥基。另外,於交聯劑為環氧系化合物之情形時,作為前述反應性官能基,可列舉羧基、胺基、醯胺基等,這些之中,較佳為與環氧基之反應性高之羧基。但是,就防止半導體晶圓或半導體晶片的電路腐蝕之方面而言,前述反應性官能基較佳為羧基以外的基。As a polymer (b) that is at least partially cross-linked by a cross-linking agent and does not have the aforementioned energy ray curable group, for example, a reactive functional group in the aforementioned polymer (b) reacts with a cross-linking agent. polymer. The above-mentioned reactive functional group may be appropriately selected according to the kind of crosslinking agent, etc., and is not particularly limited. For example, when the crosslinking agent is a polyisocyanate compound, as the aforementioned reactive functional group, a hydroxyl group, a carboxyl group, an amino group, etc. can be mentioned. Among these, a hydroxyl group having high reactivity with an isocyanate group is preferred. In addition, when the crosslinking agent is an epoxy-based compound, as the aforementioned reactive functional group, a carboxyl group, an amino group, an amide group, etc. can be cited. Among these, the one having high reactivity with the epoxy group is preferred. carboxyl. However, in terms of preventing corrosion of the semiconductor wafer or the circuit of the semiconductor wafer, the aforementioned reactive functional group is preferably a group other than a carboxyl group.

作為具有前述反應性官能基且不具有能量線硬化性基之聚合物(b),例如可列舉:至少使具有前述反應性官能基之單體進行聚合而獲得之聚合物。於丙烯酸聚合物(b-1)之情形時,作為構成該丙烯酸聚合物(b-1)之單體所列舉之前述丙烯酸單體及非丙烯酸單體之任一者或兩者,使用具有前述反應性官能基之單體即可。以具有羥基作為反應性官能基之前述聚合物(b)而言,例如可列舉使含羥基之(甲基)丙烯酸酯進行聚合而獲得之聚合物,除此以外,亦可列舉使上文所列舉之前述丙烯酸單體或非丙烯酸單體中1個或2個以上之氫原子由前述反應性官能基取代而成之單體進行聚合而獲得之聚合物。As a polymer (b) which has the said reactive functional group and does not have an energy-ray curable group, the polymer obtained by polymerizing at least the monomer which has the said reactive functional group is mentioned, for example. In the case of acrylic polymer (b-1), any one or both of the aforementioned acrylic monomers and non-acrylic monomers listed as monomers constituting the acrylic polymer (b-1) are used having the aforementioned A monomer with a reactive functional group is sufficient. For the aforementioned polymer (b) having a hydroxyl group as a reactive functional group, for example, a polymer obtained by polymerizing a hydroxyl-containing (meth)acrylate may be mentioned. In addition to this, the above-mentioned A polymer obtained by polymerizing a monomer in which one or more hydrogen atoms of the aforementioned acrylic monomer or non-acrylic monomer is substituted with the aforementioned reactive functional group.

具有反應性官能基之前述聚合物(b)中,由具有反應性官能基之單體衍生之構成單元的量相對於構成該聚合物(b)之構成單元的總量之比例(含量)較佳為1質量%至20質量%,更佳為2質量%至10質量%。藉由前述比例為此種範圍,前述聚合物(b)中的交聯程度成為更佳的範圍。In the aforementioned polymer (b) having a reactive functional group, the ratio (content) of the amount of constituent units derived from a monomer having a reactive functional group relative to the total amount of constituent units constituting the polymer (b) It is preferably 1% by mass to 20% by mass, more preferably 2% by mass to 10% by mass. When the aforementioned ratio is in such a range, the degree of crosslinking in the aforementioned polymer (b) becomes a more preferable range.

就組成物(IV-1)的造膜性更良好之方面而言,不具有能量線硬化性基之聚合物(b)的重量平均分子量(Mw)較佳為10000至2000000,更佳為100000至1500000。此處,所謂「重量平均分子量」,如上文所說明。In terms of better film-forming properties of the composition (IV-1), the weight average molecular weight (Mw) of the polymer (b) that does not have an energy-ray curable group is preferably 10,000 to 2,000,000, more preferably 100,000 To 1500000. Here, the so-called "weight average molecular weight" is as described above.

組成物(IV-1)及能量線硬化性保護膜形成用膜所含有之不具有能量線硬化性基之聚合物(b)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The composition (IV-1) and the polymer (b) that does not have an energy ray curable group contained in the film for forming an energy ray curable protective film may be only one type, or two or more types, or two types In the above case, the combination and ratio of these can be arbitrarily selected.

作為組成物(IV-1),可列舉含有前述聚合物(a1)及前述化合物(a2)之任一者或兩者之組成物。並且,於組成物(IV-1)含有前述化合物(a2)之情形時,較佳為亦進而含有不具有能量線硬化性基之聚合物(b),該情形時,亦較佳為進而含有前述(a1)。另外,組成物(IV-1)亦可不含有前述化合物(a2),且一併含有前述聚合物(a1)及不具有能量線硬化性基之聚合物(b)。As the composition (IV-1), a composition containing either or both of the aforementioned polymer (a1) and aforementioned compound (a2) can be cited. In addition, when the composition (IV-1) contains the aforementioned compound (a2), it is preferable to further contain a polymer (b) that does not have an energy-ray curable group, and in this case, it is also preferable to further contain The foregoing (a1). In addition, the composition (IV-1) may not contain the above-mentioned compound (a2), and may also contain the above-mentioned polymer (a1) and a polymer (b) which does not have an energy-ray curable group.

於組成物(IV-1)含有前述聚合物(a1)、前述化合物(a2)及不具有能量線硬化性基之聚合物(b)之情形時,組成物(IV-1)中,前述化合物(a2)的含量相對於前述聚合物(a1)及不具有能量線硬化性基之聚合物(b)的總含量100質量份,較佳為10質量份至400質量份,更佳為30質量份至350質量份。When the composition (IV-1) contains the aforementioned polymer (a1), the aforementioned compound (a2), and the aforementioned polymer (b) without an energy-ray curable group, in the composition (IV-1), the aforementioned compound The content of (a2) is 100 parts by mass relative to the total content of the aforementioned polymer (a1) and polymer (b) without energy ray curable groups, preferably 10 parts by mass to 400 parts by mass, more preferably 30 parts by mass Parts to 350 parts by mass.

組成物(IV-1)中,前述能量線硬化性成分(a)及不具有能量線硬化性基之聚合物(b)的合計含量相對於溶媒以外的成分的總含量之比例(亦即,能量線硬化性保護膜形成用膜中的前述能量線硬化性成分(a)及不具有能量線硬化性基之聚合物(b)的合計含量相對於前述膜的總質量之比例)較佳為5質量%至90質量%,更佳為10質量%至80質量%,尤佳為20質量%至70質量%。藉由能量線硬化性成分的含量之前述比例為此種範圍,能量線硬化性保護膜形成用膜的能量線硬化性變得更良好。In the composition (IV-1), the ratio of the total content of the energy ray curable component (a) and the polymer (b) not having an energy ray curable group to the total content of components other than the solvent (that is, The ratio of the total content of the aforementioned energy-ray-curable component (a) and the polymer (b) not having an energy-ray-curable group to the total mass of the aforementioned film in the film for forming an energy-ray curable protective film is preferably 5% by mass to 90% by mass, more preferably 10% by mass to 80% by mass, and particularly preferably 20% by mass to 70% by mass. When the aforementioned ratio of the content of the energy ray curable component is in this range, the energy ray curability of the film for forming an energy ray curable protective film becomes better.

組成物(IV-1)中,除前述能量線硬化性成分以外,亦可根據目的而含有選自由熱硬化性成分、填充材料、偶合劑、交聯劑、光聚合起始劑、著色劑及通用添加劑所組成之群組中的1種或2種以上。In the composition (IV-1), in addition to the aforementioned energy ray curable component, it may also contain a thermosetting component, a filler, a coupling agent, a crosslinking agent, a photopolymerization initiator, a coloring agent, and the like according to the purpose. One or more than two types in the group consisting of general additives.

作為組成物(IV-1)中的前述熱硬化性成分、填充材料、偶合劑、交聯劑、光聚合起始劑、著色劑及通用添加劑,可列舉分別與組成物(III-1)中的熱硬化性成分(B)、填充材料(D)、偶合劑(E)、交聯劑(F)、光聚合起始劑(H)、著色劑(I)及通用添加劑(J)相同的化合物。As the aforementioned thermosetting components, fillers, coupling agents, crosslinking agents, photopolymerization initiators, colorants, and general additives in the composition (IV-1), there may be mentioned those in the composition (III-1). The thermosetting component (B), filler (D), coupling agent (E), crosslinking agent (F), photopolymerization initiator (H), coloring agent (I) and general additives (J) are the same Compound.

例如,藉由使用含有前述能量線硬化性成分及熱硬化性成分之組成物(IV-1),所形成之能量線硬化性保護膜形成用膜藉由加熱而對被接著體之接著力提高,由該能量線硬化性保護膜形成用膜所形成之保護膜的強度亦提高。 另外,藉由使用含有前述能量線硬化性成分及著色劑之組成物(IV-1),所形成之能量線硬化性保護膜形成用膜表現出與上文說明之熱硬化性保護膜形成用膜含有著色劑(I)之情形同樣的效果。For example, by using the composition (IV-1) containing the aforementioned energy ray curable component and thermosetting component, the formed film for forming an energy ray curable protective film increases the adhesive force to the adherend by heating , The strength of the protective film formed from the film for forming the energy ray curable protective film is also improved. In addition, by using the composition (IV-1) containing the aforementioned energy ray curable component and coloring agent, the formed energy ray curable protective film formation film exhibits the same characteristics as the thermosetting protective film described above. The same effect is achieved when the film contains the coloring agent (I).

組成物(IV-1)中,前述熱硬化性成分、填充材料、偶合劑、交聯劑、光聚合起始劑、著色劑及通用添加劑分別可單獨使用1種,亦可併用2種以上,於併用2種以上之情形時,這些的組合及比率可任意選擇。In the composition (IV-1), the aforementioned thermosetting components, fillers, coupling agents, crosslinking agents, photopolymerization initiators, colorants, and general additives may be used singly, or two or more of them may be used in combination. When two or more types are used in combination, the combination and ratio of these can be arbitrarily selected.

組成物(IV-1)中的前述熱硬化性成分、填充材料、偶合劑、交聯劑、光聚合起始劑、著色劑及通用添加劑的含量根據目的適宜調節即可,並無特別限定。The content of the aforementioned thermosetting component, filler, coupling agent, crosslinking agent, photopolymerization initiator, coloring agent, and general additives in the composition (IV-1) may be appropriately adjusted according to the purpose, and is not particularly limited.

就藉由稀釋而使該組成物(IV-1)的操作性提高而言,組成物(IV-1)較佳為進而含有溶媒。 作為組成物(IV-1)所含有之溶媒,例如可列舉與組成物(III-1)中的溶媒相同的溶媒。組成物(IV-1)所含有之溶媒可僅為1種,亦可為2種以上。 組成物(IV-1)中的溶媒的含量並無特別限定,例如根據溶媒以外的成分的種類適宜選擇即可。In terms of improving the operability of the composition (IV-1) by dilution, the composition (IV-1) preferably further contains a solvent. Examples of the solvent contained in the composition (IV-1) include the same solvents as the solvent in the composition (III-1). The solvent contained in the composition (IV-1) may be only one type or two or more types. The content of the solvent in the composition (IV-1) is not particularly limited, and may be appropriately selected according to the types of components other than the solvent, for example.

[能量線硬化性保護膜形成用組成物之製造方法] 組成物(IV-1)等能量線硬化性保護膜形成用組成物藉由調配用以構成該組成物之各成分而獲得。 能量線硬化性保護膜形成用組成物例如除調配成分的種類不同之方面以外,利用與上文說明之黏著劑組成物之情形相同的方法進行製造。[Method for manufacturing composition for forming energy ray curable protective film] A composition for forming an energy ray curable protective film, such as composition (IV-1), is obtained by blending each component that constitutes the composition. The composition for forming an energy ray curable protective film is manufactured by the same method as that of the adhesive composition described above, except for the difference in the types of compounding components, for example.

○非硬化性保護膜形成用膜 作為較佳的非硬化性保護膜形成用膜,例如可列舉含有熱塑性樹脂及填充材料之膜。○Film for forming non-curable protective film As a preferable film for forming a non-curable protective film, for example, a film containing a thermoplastic resin and a filler can be cited.

[非硬化性保護膜形成用組成物(V-1)] 作為較佳的非硬化性保護膜形成用組成物,例如可列舉含有前述熱塑性樹脂及填充材料之非硬化性保護膜形成用組成物(V-1)(本說明書中,有時僅簡稱為「組成物(V-1)」)等。[Composition for forming non-curable protective film (V-1)] As a preferable composition for forming a non-curable protective film, for example, a composition for forming a non-curable protective film containing the aforementioned thermoplastic resin and filler (V-1) (in this specification, sometimes simply referred to as " Composition (V-1)”) etc.

[熱塑性樹脂] 前述熱塑性樹脂並無特別限定。 作為前述熱塑性樹脂,更具體而言,例如可列舉與作為上述之組成物(III-1)的含有成分所列舉之丙烯酸樹脂、聚酯、聚胺基甲酸酯、苯氧基樹脂、聚丁烯、聚丁二烯、聚苯乙烯等非硬化性之樹脂相同的樹脂。[Thermoplastic resin] The aforementioned thermoplastic resin is not particularly limited. As the aforementioned thermoplastic resins, more specifically, for example, acrylic resins, polyesters, polyurethanes, phenoxy resins, and polybutylene resins listed as components of the above-mentioned composition (III-1) can be cited. Non-curable resins such as olefin, polybutadiene, polystyrene, etc. are the same resins.

組成物(V-1)及非硬化性保護膜形成用膜所含有之前述熱塑性樹脂可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The aforementioned thermoplastic resin contained in the composition (V-1) and the film for forming a non-curable protective film may be only one type or two or more types. In the case of two or more types, the combination and ratio of these resins may be Free to choose.

組成物(V-1)中,前述熱塑性樹脂的含量相對於溶媒以外的成分的總含量之比例(亦即,非硬化性保護膜形成用膜中的前述熱塑性樹脂的含量相對於非硬化性保護膜形成用膜的總質量之比例)較佳為25質量%至75質量%。In the composition (V-1), the ratio of the content of the thermoplastic resin to the total content of components other than the solvent (that is, the content of the thermoplastic resin in the film for forming a non-curable protective film relative to the non-curable protective film The ratio of the total mass of the film for film formation) is preferably 25% by mass to 75% by mass.

[填充材料] 含有填充材料之非硬化性保護膜形成用膜發揮與含有填充材料(D)之熱硬化性保護膜形成用膜同樣的效果。[Filler] The film for forming a non-curable protective film containing a filler exerts the same effect as the film for forming a thermosetting protective film containing a filler (D).

作為組成物(V-1)及非硬化性保護膜形成用膜所含有之填充材料,可列舉與組成物(III-1)及熱硬化性保護膜形成用膜所含有之填充材料(D)相同的化合物。Examples of the filler contained in the composition (V-1) and the film for forming a non-curable protective film include the filler (D) contained in the composition (III-1) and the film for forming a thermosetting protective film The same compound.

組成物(V-1)及非硬化性保護膜形成用膜所含有之填充材料可僅為1種,亦可為2種以上,於為2種以上之情形時,這些的組合及比率可任意選擇。The filler material contained in the composition (V-1) and the film for forming a non-curable protective film may be only one type or two or more types. In the case of two or more types, the combination and ratio of these may be arbitrary select.

組成物(V-1)中,填充材料的含量相對於溶媒以外的全部成分的總含量之比例(亦即,非硬化性保護膜形成用膜中的填充材料的含量相對於非硬化性保護膜形成用膜的總質量之比例)較佳為25質量%至75質量%。藉由前述比例為此種範圍,與使用組成物(III-1)之情形同樣地,更容易調整保護膜(換言之,非硬化性保護膜形成用膜)的熱膨脹係數。In the composition (V-1), the ratio of the content of the filler to the total content of all components other than the solvent (that is, the content of the filler in the film for forming a non-curing protective film relative to the non-curing protective film The ratio of the total mass of the film for formation) is preferably 25% by mass to 75% by mass. When the aforementioned ratio is in this range, it is easier to adjust the thermal expansion coefficient of the protective film (in other words, the film for forming a non-curable protective film) as in the case of using the composition (III-1).

組成物(V-1)中,除前述熱塑性樹脂及填充材料以外,亦可根據目的含有其他成分。 前述其他成分並無特別限定,可根據目的任意選擇。 例如,藉由使用含有前述熱塑性樹脂及著色劑之組成物(V-1),所形成之非硬化性保護膜形成用膜(換言之,保護膜)表現出與上文說明之熱硬化性保護膜形成用膜含有著色劑(I)之情形同樣的效果。In the composition (V-1), in addition to the aforementioned thermoplastic resin and filler, other components may be contained according to the purpose. The aforementioned other components are not particularly limited, and can be arbitrarily selected according to the purpose. For example, by using the composition (V-1) containing the aforementioned thermoplastic resin and coloring agent, the formed non-curable protective film forming film (in other words, the protective film) exhibits the same thermosetting protective film as described above The same effect is obtained when the film for formation contains the coloring agent (I).

組成物(V-1)中,前述其他成分可單獨使用1種,亦可併用2種以上,於併用2種以上之情形時,這些的組合及比率可任意選擇。In the composition (V-1), the aforementioned other components may be used alone or in combination of two or more types. When two or more types are used in combination, the combination and ratio of these may be arbitrarily selected.

組成物(V-1)中的前述其他成分的含量根據目的適宜調節即可,並無特別限定。The content of the aforementioned other components in the composition (V-1) may be appropriately adjusted according to the purpose, and is not particularly limited.

就藉由稀釋而使該組成物(V-1)的操作性提高而言,組成物(V-1)較佳為進而含有溶媒。作為組成物(V-1)所含有之溶媒,例如可列舉與上述之組成物(III-1)中的溶媒相同的化合物。組成物(V-1)所含有之溶媒可僅為1種,亦可為2種以上。組成物(V-1)中的溶媒的含量並無特別限定,例如根據溶媒以外的成分的種類適宜選擇即可。In terms of improving the operability of the composition (V-1) by dilution, the composition (V-1) preferably further contains a solvent. Examples of the solvent contained in the composition (V-1) include the same compounds as the solvent in the above-mentioned composition (III-1). The solvent contained in the composition (V-1) may be only one type or two or more types. The content of the solvent in the composition (V-1) is not particularly limited, and may be appropriately selected according to the types of components other than the solvent, for example.

[非硬化性保護膜形成用組成物之製造方法] 組成物(V-1)等非硬化性保護膜形成用組成物藉由調配用以構成該組成物之各成分而獲得。 非硬化性保護膜形成用組成物例如除調配成分的種類不同之方面以外,可利用與上文說明之黏著劑組成物之情形相同的方法進行製造。[Method for manufacturing composition for forming non-curable protective film] The composition for forming a non-curable protective film, such as the composition (V-1), is obtained by blending each component that constitutes the composition. The composition for forming a non-curable protective film, for example, can be manufactured by the same method as the adhesive composition described above, except for the difference in the types of compounding components.

作為本實施形態的保護膜形成用複合片中較佳的一例,可列舉以下之保護膜形成用複合片:係用以貼附於半導體晶圓的內面而於前述內面形成保護膜;前述保護膜形成用複合片具備防污片、及形成於前述防污片的一面上之保護膜形成用膜;前述保護膜形成用膜能夠形成前述保護膜;前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm;前述防污片具備基材、及形成於前述基材的一面上之黏著劑層,前述保護膜形成用複合片係前述基材、黏著劑層及保護膜形成用膜依序積層而構成;前述基材以選自由聚乙烯、聚丙烯及聚對苯二甲酸乙二酯所組成之群組中的1種或2種以上作為構成材料;前述黏著劑層為能量線硬化性或非能量線硬化性;能量線硬化性之前述黏著劑層係使用含有能量線硬化性之黏著性樹脂(I-2a)及交聯劑之黏著劑組成物(I-2)而形成;前述黏著性樹脂(I-2a)係使具有源自(甲基)丙烯酸烷基酯之構成單元及源自含官能基之單體之構成單元之黏著性樹脂(I-1a)中的前述官能基來與具有能量線聚合性不飽和基之含不飽和基之化合物反應而獲得,前述交聯劑與前述官能基反應而使前述黏著性樹脂(I-2a)彼此交聯,前述黏著劑組成物(I-2)中,前述交聯劑的含量相對於前述黏著性樹脂(I-2a)的含量100質量份為0.1質量份至20質量份;非能量線硬化性之前述黏著劑層係使用含有黏著性樹脂(I-1a)(具有源自(甲基)丙烯酸烷基酯之構成單元及源自含官能基之單體之構成單元)及交聯劑之黏著劑組成物(I-4)而形成,前述交聯劑與前述官能基反應而使前述黏著性樹脂(I-1a)彼此交聯,前述黏著劑組成物(I-4)中,前述交聯劑的含量相對於前述黏著性樹脂(I-1a)的含量100質量份為0.1質量份至47質量份;製作寬度為15mm之前述防污片之試片,進行以下之拉伸試驗,亦即於18℃至28℃之溫度條件下,將初始的夾頭間隔設為100mm,將前述試片於相對於前述試片的表面呈平行的方向上以200mm/min之速度拉伸時,前述試片能夠伸長15%以上,且前述試片伸長10%時的拉伸強度為4.0N/15mm以上。As a preferable example of the composite sheet for forming a protective film of the present embodiment, the following composite sheet for forming a protective film can be cited: it is used for attaching to the inner surface of a semiconductor wafer to form a protective film on the inner surface; The composite sheet for forming a protective film includes an antifouling sheet and a film for forming a protective film formed on one side of the antifouling sheet; the film for forming the protective film can form the protective film; the composite sheet for forming a protective film is relative to The maximum width of the composite sheet for forming a protective film in a direction parallel to the attachment surface of the semiconductor wafer is 155mm to 194mm, 205mm to 250mm, 305mm to 350mm, or 455mm to 500mm; the aforementioned antifouling sheet It is provided with a substrate and an adhesive layer formed on one surface of the substrate, and the composite sheet for forming a protective film is composed of the substrate, the adhesive layer, and the film for forming a protective film in sequence; the substrate is selected One or two or more of the group consisting of polyethylene, polypropylene and polyethylene terephthalate are used as constituent materials; the aforementioned adhesive layer is energy ray hardenable or non-energy ray hardenable; energy ray The aforementioned curable adhesive layer is formed by using an adhesive composition (I-2) containing an energy-ray curable adhesive resin (I-2a) and a cross-linking agent; the aforementioned adhesive resin (I-2a) is The aforementioned functional group in the adhesive resin (I-1a) having a structural unit derived from alkyl (meth)acrylate and a structural unit derived from a functional group-containing monomer is combined with energy ray polymerizable unsaturated The above-mentioned crosslinking agent reacts with the above-mentioned functional group to cross-link the above-mentioned adhesive resin (I-2a) with each other. In the above-mentioned adhesive composition (I-2), the above-mentioned cross-linking The content of the linking agent is 0.1 to 20 parts by mass relative to 100 parts by mass of the content of the adhesive resin (I-2a); the non-energy-ray curable adhesive layer contains adhesive resin (I-1a) (Having a structural unit derived from alkyl (meth)acrylate and a structural unit derived from a functional group-containing monomer) and a cross-linking agent of the adhesive composition (I-4), the aforementioned cross-linking agent and The functional groups react to crosslink the adhesive resins (I-1a) with each other. In the adhesive composition (I-4), the content of the crosslinking agent is relative to the content of the adhesive resin (I-1a) 100 parts by mass is 0.1 parts by mass to 47 parts by mass; make a test piece of the aforementioned antifouling sheet with a width of 15mm, and perform the following tensile test, that is, under the temperature condition of 18°C to 28°C, the initial chuck When the interval is set to 100mm, and the test piece is stretched at a speed of 200mm/min in a direction parallel to the surface of the test piece, the test piece can be stretched by 15% or more, and the test piece is stretched by 10% The tensile strength is 4.0N/15mm or more.

作為本實施形態的保護膜形成用複合片中較佳的另一例,可列舉以下之保護膜形成用複合片:係用以貼附於半導體晶圓的內面而於前述內面形成保護膜;前述保護膜形成用複合片具備防污片、及形成於前述防污片的一面上之保護膜形成用膜;前述保護膜形成用膜能夠形成前述保護膜;前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm;前述防污片具備基材、及形成於前述基材的一面上之黏著劑層,前述保護膜形成用複合片係前述基材、黏著劑層及保護膜形成用膜依序積層而構成;前述基材以選自由聚乙烯、聚丙烯及聚對苯二甲酸乙二酯所組成之群組中的1種或2種以上作為構成材料;前述黏著劑層為能量線硬化性或非能量線硬化性;能量線硬化性之前述黏著劑層係使用含有能量線硬化性之黏著性樹脂(I-2a)及交聯劑之黏著劑組成物(I-2)而形成,前述黏著性樹脂(I-2a)係使具有源自(甲基)丙烯酸烷基酯之構成單元、及源自含官能基之單體之構成單元之黏著性樹脂(I-1a)中的前述官能基來與具有能量線聚合性不飽和基之含不飽和基之化合物反應而獲得,前述交聯劑與前述官能基反應而使前述黏著性樹脂(I-2a)彼此交聯,前述黏著劑組成物(I-2)中,前述交聯劑的含量相對於前述黏著性樹脂(I-2a)的含量100質量份為0.1質量份至20質量份;非能量線硬化性之前述黏著劑層係使用含有黏著性樹脂(I-1a)(具有源自(甲基)丙烯酸烷基酯之構成單元及源自含官能基之單體之構成單元)及交聯劑之黏著劑組成物(I-4)而形成,前述交聯劑與前述官能基反應而使前述黏著性樹脂(I-1a)彼此交聯,前述黏著劑組成物(I-4)中,前述交聯劑的含量相對於前述黏著性樹脂(I-1a)的含量100質量份為0.1質量份至47質量份;前述保護膜形成用膜含有聚合物成分(A)、環氧樹脂(B1)及熱硬化劑(B2),為熱硬化性,前述保護膜形成用膜中,前述熱硬化劑(B2)的含量相對於前述環氧樹脂(B1)的含量100質量份為1質量份至25質量份,前述保護膜形成用膜中,前述環氧樹脂(B1)及熱硬化劑(B2)的總含量相對於前述聚合物成分(A)的含量100質量份為35質量份至100質量份;製作寬度為15mm之前述防污片之試片,進行以下之拉伸試驗,亦即於18℃至28℃之溫度條件下,將初始的夾頭間隔設為100mm,將前述試片於相對於前述試片的表面呈平行的方向上以200mm/min之速度拉伸時,前述試片能夠伸長15%以上,且前述試片伸長10%時的拉伸強度為4.0N/15mm以上。As another preferable example of the composite sheet for forming a protective film of this embodiment, the following composite sheet for forming a protective film can be cited: it is used for attaching to the inner surface of a semiconductor wafer to form a protective film on the aforementioned inner surface; The composite sheet for forming a protective film includes an antifouling sheet and a film for forming a protective film formed on one side of the antifouling sheet; the film for forming a protective film can form the protective film; the opposite of the composite sheet for forming a protective film The maximum width of the composite sheet for forming a protective film in a direction parallel to the attaching surface of the semiconductor wafer is 155mm to 194mm, 205mm to 250mm, 305mm to 350mm, or 455mm to 500mm; the aforementioned antifouling The sheet includes a substrate and an adhesive layer formed on one surface of the substrate. The composite sheet for forming a protective film is composed of the substrate, the adhesive layer, and the film for forming a protective film in sequence; the substrate is composed of One or two or more selected from the group consisting of polyethylene, polypropylene and polyethylene terephthalate as constituent materials; the aforementioned adhesive layer is energy ray hardenable or non-energy ray hardenable; energy; The aforementioned adhesive layer of linear curability is formed by using an adhesive composition (I-2) containing an energy-curable adhesive resin (I-2a) and a cross-linking agent. The aforementioned adhesive resin (I-2a) The aforementioned functional group in the adhesive resin (I-1a) having a structural unit derived from alkyl (meth)acrylate and a structural unit derived from a functional group-containing monomer is combined with energy ray polymerizable It is obtained by reacting an unsaturated group-containing compound with an unsaturated group, and the aforementioned crosslinking agent reacts with the aforementioned functional group to crosslink the aforementioned adhesive resins (I-2a) with each other. In the aforementioned adhesive composition (I-2), The content of the crosslinking agent is 0.1 to 20 parts by mass relative to 100 parts by mass of the content of the adhesive resin (I-2a); the non-energy-ray curable adhesive layer is made of an adhesive resin (I- 1a) (Having structural units derived from alkyl (meth)acrylate and structural units derived from functional group-containing monomers) and a cross-linking agent to form an adhesive composition (I-4), the aforementioned cross-linking The agent reacts with the functional group to cross-link the adhesive resin (I-1a) with each other. In the adhesive composition (I-4), the content of the cross-linking agent is relative to the adhesive resin (I-1a) The content of 100 parts by mass is 0.1 parts by mass to 47 parts by mass; the aforementioned protective film forming film contains polymer component (A), epoxy resin (B1) and thermosetting agent (B2), and is thermosetting, the aforementioned protective film In the film for forming, the content of the thermosetting agent (B2) is 1 part by mass to 25 parts by mass relative to 100 parts by mass of the content of the epoxy resin (B1). In the film for forming a protective film, the epoxy resin ( The total content of B1) and thermosetting agent (B2) is 35 parts by mass to 100 parts by mass relative to 100 parts by mass of the polymer component (A); a test piece of the aforementioned antifouling sheet with a width of 15 mm is made, and the following is performed The tensile test, that is, at 18 Under the temperature condition of ℃ to 28℃, the initial chuck spacing is set to 100mm, and the test piece can be stretched at a speed of 200mm/min in a direction parallel to the surface of the test piece. The tensile strength when elongation is 15% or more, and the aforementioned test piece is extended by 10% is 4.0N/15mm or more.

◇保護膜形成用複合片之製造方法 前述保護膜形成用複合片可藉由將上述各層以成為對應的位置關係之方式進行積層,視需要調節一部分或全部層的形狀而製造。各層之形成方法如上文所說明。◇Manufacturing method of composite sheet for forming protective film The aforementioned composite sheet for forming a protective film can be manufactured by laminating each of the above-mentioned layers so as to have a corresponding positional relationship, and adjusting the shape of a part or all of the layers as necessary. The formation method of each layer is as described above.

例如,於製造防污片時,於基材上積層黏著劑層之情形時,只要於基材上塗敷上述黏著劑組成物,視需要使之乾燥即可。該方法可應用於在基材的前述凹凸面上積層黏著劑層之情形、及在基材的前述平滑面上積層黏著劑層之情形之任一情形。並且,該方法尤其適於在前述凹凸面上積層黏著劑層之情形。原因在於,於應用該方法之情形時,可獲得抑制於基材的前述凹凸面與黏著劑層之間產生空隙部之高效果。For example, in the case of laminating an adhesive layer on a substrate when manufacturing an antifouling sheet, it is only necessary to apply the above-mentioned adhesive composition on the substrate and dry it if necessary. This method can be applied to either the case of laminating an adhesive layer on the uneven surface of the substrate and the case of laminating an adhesive layer on the smooth surface of the substrate. In addition, this method is particularly suitable for the case where an adhesive layer is laminated on the aforementioned uneven surface. The reason is that when this method is applied, a high effect of suppressing the generation of voids between the aforementioned uneven surface of the base material and the adhesive layer can be obtained.

另一方面,於基材上積層黏著劑層之情形時,如上所述,亦可應用以下之方法代替於基材上塗敷黏著劑組成物之方法。 亦即,亦可利用以下之方法將黏著劑層積層於基材上:於剝離膜上塗敷黏著劑組成物,視需要使之乾燥,藉此於剝離膜上預先形成黏著劑層,使該黏著劑層的露出面與基材的一表面貼合。並且,該方法尤其適於在前述平滑面上積層黏著劑層之情形。原因在於,於應用該方法之情形時,可獲得抑制於基材的前述平滑面與黏著劑層之間產生空隙部之高效果。On the other hand, when the adhesive layer is laminated on the substrate, as described above, the following method can also be applied instead of the method of applying the adhesive composition on the substrate. That is, the adhesive layer can also be laminated on the substrate by the following method: apply the adhesive composition on the release film and dry it if necessary, thereby forming an adhesive layer on the release film in advance to make the adhesive The exposed surface of the agent layer is attached to one surface of the substrate. In addition, this method is particularly suitable for the case where an adhesive layer is laminated on the aforementioned smooth surface. The reason is that when this method is applied, a high effect of suppressing the generation of voids between the smooth surface of the substrate and the adhesive layer can be obtained.

前文中,列舉了於基材上積層黏著劑層之情形為例,但上述方法例如亦可應用於在基材上積層前述其他層之情形。In the foregoing, the case where the adhesive layer is laminated on the substrate is cited as an example, but the above method can also be applied to, for example, the case where the aforementioned other layers are laminated on the substrate.

另一方面,例如於已積層於基材上之黏著劑層上進而積層保護膜形成用膜之情形時,可於黏著劑層上塗敷保護膜形成用組成物,直接形成保護膜形成用膜。保護膜形成用膜以外的層亦可使用用以形成該層之組成物,利用相同的方法,於黏著劑層上積層該層。如此,於已積層於基材上之任一層(以下,簡稱為「第1層」)上形成新的層(以下,簡稱為「第2層」)而形成連續之2層之積層結構(換言之,第1層及第2層之積層結構)之情形時,可應用於前述第1層上塗敷用以形成前述第2層之組成物並視需要使之乾燥之方法。 但是,較佳為藉由下述方式形成連續之2層之積層結構:使用用以形成第2層之組成物,於剝離膜上預先形成第2層,使該已形成之第2層中之與接觸於前述剝離膜之側為相反側的露出面來與第1層的露出面貼合。此時,前述組成物較佳為塗敷於剝離膜的剝離處理面。剝離膜於形成積層結構後,視需要移除即可。 此處列舉了於黏著劑層上積層保護膜形成用膜之情形為例,但例如於黏著劑層上積層前述其他層之情形等,成為對象之積層結構可任意選擇。On the other hand, for example, when the protective film forming film is laminated on the adhesive layer already laminated on the substrate, the protective film forming composition can be coated on the adhesive layer to directly form the protective film forming film. The layer other than the film for forming a protective film can also use the composition for forming the layer, and the layer is laminated on the adhesive layer by the same method. In this way, a new layer (hereinafter, abbreviated as the "second layer") is formed on any layer (hereinafter, abbreviated as the "first layer") that has been laminated on the substrate to form a continuous two-layer laminated structure (in other words , In the case of a layered structure of the first layer and the second layer), it can be applied to the method of coating the composition for forming the second layer on the first layer and drying it if necessary. However, it is preferable to form a continuous two-layer laminated structure by using a composition for forming the second layer, and forming the second layer on the release film in advance so that The exposed surface on the opposite side to the side in contact with the release film is bonded to the exposed surface of the first layer. In this case, the aforementioned composition is preferably applied to the release-treated surface of the release film. The peeling film can be removed as needed after forming the laminated structure. Here, the case where the protective film forming film is laminated on the adhesive layer is taken as an example, but for example, the case where the aforementioned other layers are laminated on the adhesive layer, etc., the target laminated structure can be arbitrarily selected.

如此,構成保護膜形成用複合片之基材以外的層均可利用預先形成於剝離膜上之後再貼合於目標層的表面的方法來進行積層,因此只要視需要適宜選擇採用此種步驟之層來製造保護膜形成用複合片即可。In this way, all layers other than the base material constituting the protective film forming composite sheet can be laminated by the method of pre-formed on the release film and then bonded to the surface of the target layer. Therefore, as long as you need to appropriately select and adopt such a step What is necessary is just to manufacture a composite sheet for protective film formation by layer.

此外,保護膜形成用複合片通常係以該保護膜形成用複合片中之與防污片為相反側的最表層(例如,保護膜形成用膜)的表面貼合有剝離膜之狀態保管。因此,藉由下述方式獲得附剝離膜之保護膜形成用複合片:於該剝離膜(較佳為該剝離膜的剝離處理面)上塗敷保護膜形成用組成物等用以形成構成最表層之層之組成物,視需要使之乾燥,藉此於剝離膜上預先形成構成最表層之層,於該層中之與接觸於剝離膜之側為相反側的露出面上利用上述任一種方法積層剩餘各層,不移除剝離膜而保持貼合狀態不變。In addition, the composite sheet for forming a protective film is usually stored in a state where a release film is attached to the surface of the outermost layer (for example, the film for forming a protective film) on the opposite side to the antifouling sheet of the composite sheet for forming a protective film. Therefore, a composite sheet for forming a protective film with a release film is obtained by coating the release film (preferably the release treatment surface of the release film) with a composition for forming a protective film, etc. to form the outermost layer If necessary, dry the composition of the layer to form the outermost layer on the release film in advance. Use any of the above methods on the exposed surface of the layer opposite to the side contacting the release film Laminate the remaining layers without removing the release film and keep the attached state unchanged.

◇附保護膜之半導體晶片之製造方法 前述保護膜形成用複合片能夠用於製造附保護膜之半導體晶片。 亦即,本發明的一實施形態的附保護膜之半導體晶片之製造方法係製造具備半導體晶片、及設置於前述半導體晶片的內面之保護膜之附保護膜之半導體晶片;前述保護膜係由前述保護膜形成用複合片中的保護膜形成用膜所形成;於前述保護膜形成用膜為硬化性之情形時,前述保護膜形成用膜之硬化物為保護膜,於前述保護膜形成用膜為非硬化性之情形時,貼附於分割為前述半導體晶片之前的半導體晶圓的內面之後的前述保護膜形成用膜為保護膜;前述附保護膜之半導體晶片之製造方法具有:第1貼附步驟,係一邊將前述保護膜形成用複合片於相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上拉伸,一邊將前述保護膜形成用複合片中的保護膜形成用膜貼附於大小小於前述保護膜形成用膜之前述半導體晶圓的內面整面,藉此製作於前述半導體晶圓的內面設置有前述保護膜形成用複合片之第1積層體;第1切斷步驟,係將前述第1積層體中的前述保護膜形成用複合片沿著前述半導體晶圓的外周切斷,藉此製作於前述半導體晶圓的內面設置有切斷後的前述保護膜形成用複合片之第2積層體;操作步驟,係將前述第2積層體予以操作;第2貼附步驟,係於前述操作步驟之後,於操作後的前述第2積層體中的防污片中之與前述保護膜形成用膜或保護膜之側為相反側的面貼附黏著片;分割步驟,係於前述第2貼附步驟之後,分割前述半導體晶圓,藉此製作半導體晶片;第2切斷步驟,係於前述第2貼附步驟之後,切斷前述保護膜形成用膜或保護膜;以及拾取步驟,係將具備前述切斷後的保護膜形成用膜或保護膜之前述半導體晶片自包含前述防污片及黏著片之積層片扯離而進行拾取;前述第1貼附步驟中,係使前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值,相對於前述半導體晶圓之相對於前述半導體晶圓中之與前述保護膜形成用複合片之貼附面呈平行的方向上的寬度的最大值成為101.1%至129.3%;於前述保護膜形成用膜為硬化性之情形時,進而具有硬化步驟,係於前述操作步驟之後,使前述保護膜形成用膜硬化,藉此形成保護膜。◇Method of manufacturing semiconductor chip with protective film The aforementioned composite sheet for forming a protective film can be used to manufacture a semiconductor wafer with a protective film. That is, the method for manufacturing a semiconductor chip with a protective film according to an embodiment of the present invention is to manufacture a semiconductor chip with a protective film provided with a semiconductor chip and a protective film provided on the inner surface of the semiconductor chip; the protective film is made of The protective film formation film in the aforementioned protective film formation composite sheet is formed; when the protective film formation film is curable, the cured product of the protective film formation film is a protective film, which is used for the formation of the protective film When the film is non-curable, the film for forming the protective film after being attached to the inner surface of the semiconductor wafer before being divided into the semiconductor wafer is a protective film; the manufacturing method of the semiconductor chip with protective film has: 1 The attaching step is to stretch the composite sheet for forming a protective film in a direction parallel to the attaching surface of the semiconductor wafer in the composite sheet for forming a protective film, while forming the protective film The protective film forming film in the composite sheet is attached to the entire inner surface of the semiconductor wafer whose size is smaller than the protective film forming film, so that the protective film forming is provided on the inner surface of the semiconductor wafer The first laminated body of the composite sheet; the first cutting step is to cut the composite sheet for forming the protective film in the first laminated body along the outer periphery of the semiconductor wafer, thereby making the semiconductor wafer The second laminated body of the composite sheet for forming the protective film after being cut is provided on the inner surface; the operation step is to operate the second laminated body; the second attaching step is after the operation step and after the operation In the antifouling sheet in the second layered body, the adhesive sheet is attached to the side opposite to the side of the protective film forming film or the protective film; the dividing step is after the second attaching step, and the semiconductor is divided The second cutting step is to cut the protective film forming film or protective film after the second attaching step; and the picking step is to provide the cut protective film The semiconductor wafer of the formation film or the protective film is pulled away from the laminated sheet including the antifouling sheet and the adhesive sheet and picked up; in the first attaching step, the composite sheet for the protective film formation is made to be opposite to the protective film The maximum width of the composite sheet for film formation in a direction parallel to the attachment surface of the semiconductor wafer is relative to the semiconductor wafer with respect to the composite sheet for protective film formation in the semiconductor wafer The maximum value of the width of the attachment surface in the parallel direction becomes 101.1% to 129.3%; when the film for forming the protective film is curable, there is a curing step, which is followed by the above-mentioned operation step to make the protective film The film for film formation is cured, thereby forming a protective film.

根據前述附保護膜之半導體晶片之製造方法,能夠抑制在前述操作步驟之開始時至前述第2貼附步驟之開始時之期間,不預期的異物附著於保護膜形成用膜、尤其是保護膜形成用膜中之與半導體晶圓之貼附面為相反側的面。 以下,一邊參照圖式,一邊對各步驟詳細地進行說明。According to the above-mentioned method for manufacturing a semiconductor wafer with a protective film, it is possible to prevent unexpected foreign matter from adhering to the protective film forming film, especially the protective film, during the period from the beginning of the operation step to the beginning of the second attaching step. In the formation film, the surface on the opposite side to the attaching surface of the semiconductor wafer. Hereinafter, each step will be described in detail while referring to the drawings.

[製造方法(1)] 首先,以下對具有前述硬化步驟之情形時的製造方法(本說明書中,有時稱為「製造方法(1)」)進行說明。 製造方法(1)中,由於保護膜形成用膜為硬化性,故而保護膜形成用膜之硬化物為保護膜。 圖5A至圖5D及圖6A至圖6C係用於以示意方式說明前述製造方法(1)的一例之剖視圖。此處對使用圖1所示之保護膜形成用複合片101之情形時的製造方法進行說明。[Manufacturing method (1)] First, the manufacturing method (in this specification, sometimes referred to as "manufacturing method (1)") when there is the aforementioned curing step is described below. In the manufacturing method (1), since the film for forming a protective film is curable, the cured product of the film for forming a protective film is a protective film. FIGS. 5A to 5D and FIGS. 6A to 6C are cross-sectional views for schematically illustrating an example of the aforementioned manufacturing method (1). Here, the manufacturing method in the case of using the composite sheet 101 for forming a protective film shown in FIG. 1 is demonstrated.

[第1貼附步驟] 於製造方法(1)的前述第1貼附步驟中,如圖5A所示,將保護膜形成用複合片101中的保護膜形成用膜13貼附於大小小於前述保護膜形成用膜13之半導體晶圓9的內面9b的整面。此時,一邊將保護膜形成用複合片101於相對於前述保護膜形成用複合片101中之對半導體晶圓之貼附面(亦即,保護膜形成用膜13的第1面13a)呈平行的方向上拉伸,一邊將保護膜形成用複合片101貼附於半導體晶圓9的內面9b。藉此,製作於半導體晶圓9的內面9b設置有保護膜形成用複合片101之第1積層體901。圖5A至圖5D中,符號9a表示半導體晶圓9中之與前述內面9b為相反側的面、亦即電路形成面(形成有電路之面)。[First attaching step] In the first attaching step of the manufacturing method (1), as shown in FIG. 5A, the protective film forming film 13 in the protective film forming composite sheet 101 is attached to a size smaller than that of the protective film forming film 13 The entire surface of the inner surface 9b of the semiconductor wafer 9. At this time, the composite sheet 101 for forming a protective film is formed on the bonding surface (that is, the first surface 13a of the film 13 for forming a protective film) to the semiconductor wafer in the composite sheet 101 for forming a protective film. While being stretched in a parallel direction, the composite sheet 101 for forming a protective film is attached to the inner surface 9 b of the semiconductor wafer 9. Thereby, the first laminated body 901 of the composite sheet 101 for forming a protective film is provided on the inner surface 9 b of the semiconductor wafer 9. In FIGS. 5A to 5D, reference numeral 9a denotes the surface of the semiconductor wafer 9 on the opposite side to the aforementioned inner surface 9b, that is, the circuit formation surface (the surface on which the circuit is formed).

前述第1貼附步驟中,如上所述,於一邊將保護膜形成用複合片101拉伸,一邊將保護膜形成用膜13貼附於半導體晶圓9的內面9b整面時,防污片10不會被切斷,亦不會產生褶皺,顯示良好的貼附適性。原因在於,防污片10之前述試片具有如上述之15%伸長性。In the above-mentioned first attaching step, as described above, when the protective film forming film 13 is attached to the entire inner surface 9b of the semiconductor wafer 9 while the protective film forming composite sheet 101 is stretched, antifouling The sheet 10 will not be cut, or wrinkles will not be generated, showing good sticking adaptability. The reason is that the aforementioned test piece of the antifouling sheet 10 has the above-mentioned 15% elongation.

前述第1貼附步驟中,作為保護膜形成用複合片101,使用保護膜形成用膜13的大小大於半導體晶圓9的大小(換言之,保護膜形成用膜13的第1面13a的面積大於半導體晶圓9的內面9b的面積)之保護膜形成用複合片。藉此,能夠將保護膜形成用膜13貼附於半導體晶圓9的內面9b的整面。In the aforementioned first attaching step, as the composite sheet 101 for forming a protective film, the size of the protective film forming film 13 is larger than the size of the semiconductor wafer 9 (in other words, the area of the first surface 13a of the protective film forming film 13 is larger than The area of the inner surface 9b of the semiconductor wafer 9) is a composite sheet for forming a protective film. Thereby, the protective film forming film 13 can be attached to the entire surface of the inner surface 9b of the semiconductor wafer 9.

將保護膜形成用複合片101拉伸之方向例如可為相對於前述貼附面呈平行的所有方向。The direction in which the composite sheet 101 for forming a protective film is stretched may be, for example, all directions parallel to the attachment surface.

於將保護膜形成用複合片101貼附於半導體晶圓9時,例如較佳為以保護膜形成用複合片101中成為半導體晶圓9的外周附近之區域伸長10%左右之狀態之方式來將保護膜形成用複合片101拉伸。此處,保護膜形成用複合片101的前述區域包括後述之第1切斷步驟中要切斷之部位。When attaching the protective film forming composite sheet 101 to the semiconductor wafer 9, for example, it is preferable to use a method in which the area near the outer periphery of the semiconductor wafer 9 in the protective film forming composite sheet 101 is extended by about 10%. The composite sheet 101 for forming a protective film is stretched. Here, the aforementioned area of the composite sheet 101 for forming a protective film includes a portion to be cut in the first cutting step described later.

於將保護膜形成用複合片101拉伸時,對該片101所施加之張力並無特別限定。When the composite sheet 101 for forming a protective film is stretched, the tension applied to the sheet 101 is not particularly limited.

前述第1貼附步驟中,亦可藉由將保護膜形成用膜13進行加熱而使之軟化,並貼附於半導體晶圓9。 此外,此處省略了圖示半導體晶圓9中電路形成面9a上的凸塊等。In the aforementioned first attaching step, the protective film forming film 13 may be heated to soften it and attached to the semiconductor wafer 9. In addition, the bumps and the like on the circuit formation surface 9a of the semiconductor wafer 9 are omitted here.

進而,前述第1貼附步驟中,係使保護膜形成用複合片101之相對於保護膜形成用複合片101中之對半導體晶圓9之貼附面101a(亦即,保護膜形成用膜13的第1面13a)呈平行的方向上的寬度W101 的最大值,相對於半導體晶圓9之相對於半導體晶圓9中之與保護膜形成用複合片101之貼附面(亦即,內面)9b呈平行的方向上的寬度W9 的最大值成為101.1%至129.3%。藉此,能夠容易地進行後續之第1切斷步驟。更具體而言,藉由使寬度W101 的最大值相對於寬度W9 的最大值成為101.1%以上,於第1切斷步驟中容易回收保護膜形成用複合片101之被切斷之部位。藉由使寬度W101 的最大值相對於寬度W9 的最大值成為129.3%以下,第1積層體901的操作性提高,進而藉由削減保護膜形成用複合片101的廢棄量而能夠降低成本。Furthermore, in the aforementioned first attaching step, the protective film forming composite sheet 101 is made to face the attaching surface 101a of the semiconductor wafer 9 in the protective film forming composite sheet 101 (that is, the protective film forming film The first surface 13a of 13 is the maximum value of the width W 101 in the parallel direction, and is relative to the attaching surface of the semiconductor wafer 9 to the protective film forming composite sheet 101 (that is, The maximum value of the width W 9 in the direction in which the inner surface 9b is parallel is 101.1% to 129.3%. Thereby, the subsequent first cutting step can be easily performed. More specifically, by setting the maximum value of the width W 101 to 101.1% or more of the maximum value of the width W 9 , it is easy to recover the cut portion of the protective film forming composite sheet 101 in the first cutting step. By making the maximum value of the width W 101 relative to the maximum value of the width W 9 129.3% or less, the operability of the first laminate 901 is improved, and further, the cost can be reduced by reducing the waste amount of the composite sheet 101 for forming a protective film .

此外,圖5A中顯示出前述寬度W101 及前述寬度W9 均成為最大之部位處的保護膜形成用複合片101及半導體晶圓9的剖面,圖5B至圖5D及圖6A至圖6C中亦顯示出相同部位處的對象物的剖面。In addition, FIG. 5A shows the cross section of the protective film forming composite sheet 101 and the semiconductor wafer 9 at the position where the aforementioned width W 101 and the aforementioned width W 9 both become the largest, in FIGS. 5B to 5D and FIGS. 6A to 6C The cross section of the object at the same part is also displayed.

作為較佳的半導體晶圓9,如上文所說明,可列舉直徑為150mm、200mm、300mm及450mm之任一種之半導體晶圓。 半導體晶圓9的厚度並無特別限定,就半導體晶圓9的強度、及後述之分割成為半導體晶片變得更容易之方面而言,較佳為30μm至500μm,更佳為50μm至400μm。As a preferable semiconductor wafer 9, as described above, a semiconductor wafer having a diameter of 150 mm, 200 mm, 300 mm, and 450 mm can be cited. The thickness of the semiconductor wafer 9 is not particularly limited. In terms of the strength of the semiconductor wafer 9 and easier division into semiconductor wafers described later, it is preferably 30 μm to 500 μm, and more preferably 50 μm to 400 μm.

為了使半導體晶圓9的厚度成為目標值,半導體晶圓9的內面可經研削。亦即,半導體晶圓9的內面9b可為研削面。In order to make the thickness of the semiconductor wafer 9 a target value, the inner surface of the semiconductor wafer 9 may be ground. That is, the inner surface 9b of the semiconductor wafer 9 may be a grinding surface.

於前述第1貼附步驟之前,將半導體晶圓9的最初的內面進行研削時,通常於半導體晶圓9的電路形成面9a貼附用以保護該電路形成面9a之背面研磨膠帶。於第1貼附步驟中作為保護膜形成用複合片101之貼附對象之半導體晶圓9的電路形成面9a可貼附背面研磨膠帶,亦可不貼附。亦即,第1積層體901亦可具備半導體晶圓9、設置於半導體晶圓9的內面9b之保護膜形成用複合片101、及設置於半導體晶圓9的電路形成面9a之背面研磨膠帶(省略圖示)。Before the first attaching step, when the first inner surface of the semiconductor wafer 9 is ground, a back polishing tape for protecting the circuit forming surface 9a is usually attached to the circuit forming surface 9a of the semiconductor wafer 9. In the first attaching step, the circuit formation surface 9a of the semiconductor wafer 9 as the attaching target of the protective film forming composite sheet 101 may or may not attach the backside polishing tape. That is, the first layered body 901 may include the semiconductor wafer 9, the protective film forming composite sheet 101 provided on the inner surface 9b of the semiconductor wafer 9, and the back polishing of the circuit forming surface 9a provided on the semiconductor wafer 9 Tape (not shown).

[第1切斷步驟] 於製造方法(1)的前述第1切斷步驟中,將第1積層體901中的保護膜形成用複合片101沿著半導體晶圓9的外周切斷。藉此,如圖5B所示,製作於半導體晶圓9的內面9b設置有切斷後的保護膜形成用複合片101之第2積層體901'。 切斷後的保護膜形成用複合片101的寬度W101 '的最大值相對於前述W101 的最大值為同等以下,相對於前述W9 的最大值為同等以上。[First Cutting Step] In the aforementioned first cutting step of the manufacturing method (1), the protective film forming composite sheet 101 in the first laminate 901 is cut along the outer periphery of the semiconductor wafer 9. As a result, as shown in FIG. 5B, the second laminated body 901 ′ of the composite sheet 101 for forming a protective film after being cut is provided on the inner surface 9 b of the semiconductor wafer 9. The maximum value of the width W 101 ′ of the composite sheet 101 for forming a protective film after cutting is equal to or less than the maximum value of W 101 , and equal to or more than the maximum value of W 9.

前述第1切斷步驟中,例如可使用如圖2所示之整體的平面形狀為矩形狀或帶狀之保護膜形成用複合片。該情形時,藉由自保護膜形成用複合片的長度方向的一端側朝向另一端側連續地將多片半導體晶圓貼附於1片保護膜形成用複合片而進行第1貼附步驟,繼而,藉由連續地以上述方式切斷保護膜形成用複合片而進行第1切斷步驟,藉此能夠連續地製作多個第2積層體901'。另外,藉由將1片半導體晶圓貼附於1片保護膜形成用複合片而進行第1貼附步驟,繼而,藉由以上述方式切斷保護膜形成用複合片而進行第1切斷步驟,自保護膜形成用複合片的長度方向的一端側朝向另一端側多次反復進行該第1貼附步驟及第1切斷步驟,藉此能夠連續地製作多個第2積層體901'。In the aforementioned first cutting step, for example, a composite sheet for forming a protective film whose overall planar shape is rectangular or tape-like as shown in FIG. 2 can be used. In this case, the first attaching step is performed by continuously attaching a plurality of semiconductor wafers to one composite sheet for forming a protective film from one end side in the longitudinal direction of the composite sheet for forming a protective film toward the other end side. Then, by continuously cutting the composite sheet for forming a protective film in the above-described manner and performing the first cutting step, a plurality of second layered bodies 901' can be continuously produced. In addition, the first attaching step is performed by attaching one semiconductor wafer to one composite sheet for forming a protective film, and then the first cutting is performed by cutting the composite sheet for forming a protective film as described above. Step, the first attaching step and the first cutting step are repeated multiple times from one end side in the longitudinal direction of the composite sheet for forming a protective film toward the other end side, whereby a plurality of second laminated bodies 901' can be continuously produced .

前述第1切斷步驟中,第1積層體901中的保護膜形成用複合片101容易被切斷,於該切斷面中毛邊之產生得到抑制,顯示良好的切斷適性。原因在於,第1積層體901中的保護膜形成用複合片101保持以上述方式拉伸之狀態而設置於半導體晶圓9的內面9b,進而,防污片10之前述試片具有如上述之10%伸長時的拉伸強度。In the aforementioned first cutting step, the composite sheet 101 for forming a protective film in the first laminate 901 is easily cut, the generation of burrs on the cut surface is suppressed, and good cutting suitability is exhibited. The reason is that the composite sheet 101 for forming a protective film in the first layered body 901 is provided on the inner surface 9b of the semiconductor wafer 9 while maintaining the state stretched in the above-mentioned manner. Furthermore, the aforementioned test piece of the antifouling sheet 10 has the above-mentioned The tensile strength at 10% elongation.

如此,保護膜形成用複合片101於第1貼附步驟中具有良好的貼附適性,於第1切斷步驟中具有良好的切斷適性,藉此能夠根據半導體晶圓9的大小藉由切斷良好地調節保護膜形成用複合片101的大小。In this way, the protective film forming composite sheet 101 has good adhesion adaptability in the first attaching step, and good cutting adaptability in the first cutting step, so that it can be cut according to the size of the semiconductor wafer 9 The size of the composite sheet 101 for forming a protective film was adjusted well.

前述第1切斷步驟中,保護膜形成用複合片101的寬度W101 的最大值相對於半導體晶圓9的寬度W9 的最大值為101.1%至129.3%,藉此能夠將第1積層體901無問題地設置於通常的切斷裝置的內部。In the aforementioned first cutting step, the maximum value of the width W 101 of the protective film forming composite sheet 101 relative to the maximum value of the width W 9 of the semiconductor wafer 9 is 101.1% to 129.3%, whereby the first laminate can be 901 is installed inside a normal cutting device without any problems.

[操作步驟] 製造方法(1)的操作步驟中的第2積層體901'的操作的種類並無特別限定,可根據目的任意選擇。[Steps] The type of operation of the second laminate 901' in the operation steps of the manufacturing method (1) is not particularly limited, and can be arbitrarily selected according to the purpose.

於第2積層體901'中的保護膜形成用膜13中與第1面13a為相反側的面(本說明書中,有時稱為「第2面」)13b貼附有防污片10。因此,操作步驟中,不論第2積層體901'的操作的種類為何,均可抑制不預期的異物附著於第2積層體901'中的保護膜形成用膜13、尤其是附著於保護膜形成用膜13的第2面13b。 如此,保護膜形成用複合片101於半導體晶圓9的內面9b藉由保護膜形成用膜13形成保護膜,不僅如此,於半導體晶圓9之分割前操作第2積層體901'時,藉由防污片10抑制不預期的異物附著於保護膜形成用膜13。The antifouling sheet 10 is attached to the surface 13b on the opposite side to the first surface 13a of the protective film forming film 13 in the second layered body 901' (in this specification, it may be referred to as the "second surface"). Therefore, in the operation step, regardless of the type of operation of the second laminate 901', it is possible to prevent unintended foreign matter from adhering to the protective film forming film 13 in the second laminate 901', especially adhering to the protective film. The second surface 13b of the film 13 is used. In this way, the protective film forming composite sheet 101 forms a protective film on the inner surface 9b of the semiconductor wafer 9 by the protective film forming film 13. Not only that, when the second layered body 901' is operated before the semiconductor wafer 9 is divided, The antifouling sheet 10 suppresses unintended foreign matter from adhering to the protective film forming film 13.

較佳的前述操作步驟例如係如圖5C所示藉由對第2積層體901'中的保護膜形成用膜13照射雷射光L而進行印字(雷射印字)之印字步驟。 雷射印字可藉由對第2積層體901'中的保護膜形成用膜13自第2積層體901'之防污片10側的外部隔著防污片10照射雷射光L而進行。此時,印字(省略圖示)係實施於保護膜形成用膜13的第2面13b。 此外,此處對進行雷射印字後的第2積層體901'賦予新的符號902。Preferably, the foregoing operation steps are, for example, a printing step of printing (laser printing) by irradiating the film 13 for forming a protective film in the second laminate 901' with laser light L as shown in FIG. 5C. Laser printing can be performed by irradiating the film 13 for forming a protective film in the second layered body 901' with laser light L from the outside of the second layered body 901' on the side of the antifouling sheet 10 through the antifouling sheet 10. At this time, printing (not shown) is performed on the second surface 13b of the protective film forming film 13. Here, a new symbol 902 is assigned to the second layered body 901' after laser printing.

於前述操作步驟為前述印字步驟之情形時,藉由切斷後的保護膜形成用複合片101的寬度W101 '的最大值相對於前述W101 的最大值為同等以下,能夠將第2積層體901'無問題地設置於通常的雷射印字裝置的內部。When the foregoing operation step is the foregoing printing step, the maximum value of the width W 101 ′ of the composite sheet 101 for forming a protective film after being cut is equal to or less than the maximum value of the foregoing W 101 , and the second laminate can be 901' is installed inside a normal laser printing device without any problems.

作為前述操作步驟中的雷射印字以外的第2積層體901'的操作,可列舉使第2積層體901'往目標場所移動之搬送等。 亦即,作為印字步驟以外的前述操作步驟,可列舉搬送步驟等。As the operation of the second laminated body 901' other than the laser printing in the above-mentioned operation steps, there may be mentioned transportation of moving the second laminated body 901' to a target location. That is, as the aforementioned operation steps other than the printing step, a conveying step or the like can be cited.

於製造方法(1)的印字步驟中,防污片10的透過清晰度越高,例如於為100以上等之情形時,能夠更清晰地印字。並且,於印字步驟結束後,防污片10的透過清晰度越高,例如於為100以上等之情形時,形成於保護膜形成用膜13或保護膜之雷射印字經由防污片10之雷射印字視認性變得更高。In the printing step of the manufacturing method (1), the transparency of the anti-fouling sheet 10 is higher, for example, when it is 100 or more, the printing can be more clearly printed. In addition, after the printing step, the transparency of the antifouling sheet 10 becomes higher. For example, when it is 100 or more, the laser printing formed on the protective film forming film 13 or the protective film passes through the antifouling sheet 10 The visibility of laser printing has become higher.

第2積層體901'的操作(換言之,操作步驟)可僅為1種,亦可為2種以上,可根據目的任意設定。 另外,操作的數量(換言之,操作步驟的數量)可僅為1,亦可為2以上,可根據目的任意設定。 例如,製造方法(1)中,作為前述操作步驟,可一併進行印字步驟及搬送步驟,該情形時,可依序進行搬送步驟、印字步驟及搬送步驟。但是,這係操作步驟的數量為2以上之情形時的一例。The operation (in other words, the operation procedure) of the second layered body 901' may be only one type or two or more types, which can be arbitrarily set according to the purpose. In addition, the number of operations (in other words, the number of operation steps) may be only 1, or may be 2 or more, and can be arbitrarily set according to the purpose. For example, in the manufacturing method (1), as the aforementioned operation steps, the printing step and the conveying step may be performed together. In this case, the conveying step, the printing step, and the conveying step may be sequentially performed. However, this is an example when the number of operation steps is 2 or more.

[硬化步驟] 製造方法(1)於前述操作步驟之後,具有使前述保護膜形成用膜硬化之硬化步驟。 製造方法(1)中,無論有無切斷,均將使貼附於半導體晶圓9後的保護膜形成用膜13硬化而獲得之硬化物當作保護膜。[Hardening step] The manufacturing method (1) has a hardening step of hardening the film for forming the protective film after the above-mentioned operation step. In the manufacturing method (1), regardless of the presence or absence of cutting, the cured product obtained by curing the protective film formation film 13 attached to the semiconductor wafer 9 is used as the protective film.

此處,如圖5D所示,顯示了在操作步驟(亦即,印字步驟)之後且後述第2貼附步驟之前,使得雷射印字完畢之第2積層體902中的保護膜形成用膜13硬化而成為保護膜13'之情形。但是,本實施形態中,進行硬化步驟之時機只要在操作步驟之後,則並不限定於此。 此外,此處對保護膜形成用膜13硬化後的第2積層體902賦予新的符號902',對保護膜形成用膜13硬化後的保護膜形成用複合片101賦予新的符號101'。符號13a'表示保護膜13'的第1面,符號13b'表示保護膜13'的第2面。Here, as shown in FIG. 5D, after the operation step (ie, the printing step) and before the second attaching step described later, the protective film forming film 13 in the second laminate 902 that has been laser-printed is displayed. It hardens to become the protective film 13'. However, in this embodiment, the timing of the hardening step is not limited to this as long as it is after the operation step. Here, the second laminate 902 after the protective film formation film 13 is cured is given a new symbol 902', and the protective film formation composite sheet 101 after the protective film formation film 13 is cured is given a new symbol 101'. The symbol 13a' indicates the first surface of the protective film 13', and the symbol 13b' indicates the second surface of the protective film 13'.

前述硬化步驟中,於保護膜形成用膜13為熱硬化性之情形時,藉由利用加熱使保護膜形成用膜13硬化而形成保護膜13'。於保護膜形成用膜13為能量線硬化性之情形時,藉由經由防污片10對保護膜形成用膜13照射能量線使保護膜形成用膜13硬化而形成保護膜13'。In the aforementioned curing step, when the protective film formation film 13 is thermosetting, the protective film formation film 13 is cured by heating to form the protective film 13'. When the protective film formation film 13 is energy ray curable, the protective film formation film 13 is cured by irradiating the protective film formation film 13 with energy rays through the antifouling sheet 10 to form the protective film 13 ′.

前述硬化步驟中,保護膜形成用膜13的硬化條件、亦即熱硬化時的加熱溫度及加熱時間、以及能量線硬化時的能量線的照度及光量如上文所說明。In the aforementioned curing step, the curing conditions of the protective film forming film 13, that is, the heating temperature and heating time during thermal curing, and the illuminance and light intensity of the energy beam during energy beam curing are as described above.

[第2貼附步驟] 於製造方法(1)的第2貼附步驟中,如圖6A所示,於操作步驟之後,於操作後的積層體(此處為雷射印字完畢且保護膜形成用膜13硬化完畢之第2積層體902')中的防污片10中之與保護膜13'側為相反側的面(本說明書中,有時稱為「第2面」)10b貼附黏著片8。此處,防污片10的第2面10b與基材11的第2面11b的含義相同。[Second attachment step] In the second attaching step of the manufacturing method (1), as shown in FIG. 6A, after the operation step, the laminated body after the operation (here, the laser printing is completed and the protective film formation film 13 is cured) The surface of the antifouling sheet 10 in the 2 layered body 902') opposite to the protective film 13' side (in this specification, sometimes referred to as the "second surface") 10b is attached to the adhesive sheet 8. Here, the second surface 10b of the antifouling sheet 10 has the same meaning as the second surface 11b of the base material 11.

黏著片8只要能夠固定保護膜形成用複合片101即可,可為公知的黏著片。黏著片例如亦可為各種切割中所使用之切割片。The adhesive sheet 8 should just be able to fix the composite sheet 101 for protective film formation, and may be a well-known adhesive sheet. The adhesive sheet may also be a cutting sheet used in various cutting, for example.

作為黏著片8,更具體而言,例如可列舉:僅由基材所構成之黏著片;具備基材、及形成於前述基材的一面上之黏著劑層之黏著片;具備基材、形成於前述基材的一面上之中間層、及形成於前述中間層中之與前述基材側為相反側的面上之黏著劑層之黏著片等。 於使用具備基材以外的層(例如前述黏著劑層、前述中間層等)之黏著片8之情形時,以基材成為與防污片10側為相反側的最表層(換言之,基材不成為對防污片10之貼附對象)之方式,對防污片10配置黏著片8。As the adhesive sheet 8 more specifically, for example, an adhesive sheet composed only of a base material; an adhesive sheet provided with a base material and an adhesive layer formed on one surface of the aforementioned base material; The intermediate layer on one side of the substrate, and the adhesive sheet of the adhesive layer formed on the surface of the intermediate layer opposite to the substrate side. When using the adhesive sheet 8 with a layer other than the base material (for example, the aforementioned adhesive layer, the aforementioned intermediate layer, etc.), the base material is the outermost layer on the opposite side to the antifouling sheet 10 side (in other words, the base material is not As a method of attaching the antifouling sheet 10), an adhesive sheet 8 is arranged on the antifouling sheet 10.

此外,本說明書中,於必須考慮防污片及黏著片雙方之情形時,將防污片中的基材稱為第3基材,將防污片中的黏著劑層稱為第3黏著劑層。此外,將黏著片中的基材稱為第2基材,將黏著片中的黏著劑層稱為第2黏著劑層。In addition, in this specification, when it is necessary to consider both the antifouling sheet and the adhesive sheet, the base material in the antifouling sheet is referred to as the third substrate, and the adhesive layer in the antifouling sheet is referred to as the third adhesive. Floor. In addition, the base material in the adhesive sheet is referred to as the second base material, and the adhesive layer in the adhesive sheet is referred to as the second adhesive layer.

前述第2貼附步驟中,亦可藉由將黏著片8進行加熱而使之軟化,並貼附於防污片10。In the aforementioned second attaching step, the adhesive sheet 8 can also be softened by heating it, and then attached to the antifouling sheet 10.

[分割步驟、第2切斷步驟] 製造方法(1)中,於第2貼附步驟之後,進行藉由分割半導體晶圓9而製作半導體晶片9'之分割步驟、及切斷保護膜13'之第2切斷步驟。 進行前述分割步驟及第2切斷步驟之順序可根據目的任意選擇,可進行分割步驟後進行第2切斷步驟,亦可同時進行分割步驟及第2切斷步驟,還可進行第2切斷步驟後進行分割步驟。 製造方法(1)中,於不分順序地不中斷而藉由相同的操作來連續地進行半導體晶圓之分割及保護膜形成用膜或保護膜之切斷之情形時,視為同時進行分割步驟及第2切斷步驟。[Division step, 2nd cutting step] In the manufacturing method (1), after the second attaching step, a dividing step of producing a semiconductor wafer 9'by dividing the semiconductor wafer 9 and a second cutting step of cutting the protective film 13' are performed. The order of performing the aforementioned dividing step and the second cutting step can be arbitrarily selected according to the purpose, the second cutting step can be performed after the dividing step, the dividing step and the second cutting step can also be performed at the same time, and the second cutting step can also be performed After the step, the segmentation step is performed. In the manufacturing method (1), when the division of the semiconductor wafer and the cutting of the protective film formation film or the protective film are continuously performed by the same operation without interruption in any order, it is regarded as simultaneous division Step and the second cutting step.

藉由進行前述分割步驟及第2切斷步驟,如圖6B所示,獲得具備半導體晶片9'、及設置於半導體晶片9'的內面9b'之切斷後的保護膜130'而構成之多個附保護膜之半導體晶片91。本步驟中,獲得這些多個附保護膜之半導體晶片91全部排列於1片防污片10上之狀態的附保護膜之半導體晶片群903。 圖6B至圖6C中,符號9a'表示半導體晶片9'中之與前述內面9b'為相反側的面、亦即電路形成面(形成有電路之面)。另外,符號130a'表示切斷後的保護膜130'中之與黏著劑層12側為相反側的面(本說明書中,有時稱為「第1面」),符號130b'表示切斷後的保護膜130'中之與第1面130a'為相反側的面(本說明書中,有時稱為「第2面」)。By performing the aforementioned dividing step and the second cutting step, as shown in FIG. 6B, a semiconductor chip 9'and a cut protective film 130' provided on the inner surface 9b' of the semiconductor wafer 9'are obtained. A semiconductor chip 91 with a protective film. In this step, a group of semiconductor wafers with a protective film 903 in a state where all of the plurality of semiconductor wafers with a protective film 91 are arranged on one antifouling sheet 10 is obtained. In FIGS. 6B to 6C, the symbol 9a' denotes the surface of the semiconductor wafer 9'on the opposite side to the aforementioned inner surface 9b', that is, the circuit forming surface (the surface on which the circuit is formed). In addition, the symbol 130a' indicates the surface of the cut protective film 130' that is on the opposite side to the adhesive layer 12 side (in this specification, it may be referred to as the "first surface"), and the symbol 130b' indicates the protection after cutting The film 130' is a surface on the opposite side to the first surface 130a' (in this specification, it may be referred to as a "second surface").

前述分割步驟及第2切斷步驟均可根據進行這些步驟之順序利用公知的方法進行。Both the aforementioned dividing step and the second cutting step can be performed by a known method according to the order in which these steps are performed.

於進行前述分割步驟後進行前述第2切斷步驟之情形時,半導體晶圓9之分割(換言之,單片化)例如可藉由隱形切割(Stealth Dicing)(註冊商標)或雷射切割等進行。 隱形切割(註冊商標)係如下之方法。亦即,首先,於半導體晶圓9的內部設定分割預定部位,以該部位為焦點並以朝該焦點聚焦之方式照射雷射光,藉此於半導體晶圓9的內部形成改質層(省略圖示)。半導體晶圓9的改質層與半導體晶圓9的其他部位不同,藉由照射雷射光而變質,強度變弱。因此,藉由對半導體晶圓9施加力,而於半導體晶圓9的內部的改質層產生沿半導體晶圓9的雙面(亦即,電路形成面9a及內面9b)方向延伸之龜裂,成為半導體晶圓9之分割(切斷)之起點。繼而,對半導體晶圓9施加力,於前述改質層的部位分割半導體晶圓9,製作半導體晶片9'。In the case where the second cutting step is performed after the above-mentioned dividing step, the dividing (in other words, singulation) of the semiconductor wafer 9 can be performed by, for example, Stealth Dicing (registered trademark) or laser cutting. . Stealth cutting (registered trademark) is the following method. That is, first, a predetermined division portion is set inside the semiconductor wafer 9, and laser light is irradiated with the portion as the focal point and focused toward the focal point, thereby forming a modified layer inside the semiconductor wafer 9 (illustration omitted) Show). The modified layer of the semiconductor wafer 9 is different from other parts of the semiconductor wafer 9 in that it is deteriorated by irradiating laser light, and its strength becomes weaker. Therefore, by applying force to the semiconductor wafer 9, the modified layer inside the semiconductor wafer 9 produces turtles extending in the direction of both sides of the semiconductor wafer 9 (that is, the circuit forming surface 9a and the inner surface 9b). The crack becomes the starting point of the division (cutting) of the semiconductor wafer 9. Then, a force is applied to the semiconductor wafer 9, and the semiconductor wafer 9 is divided at the portion of the aforementioned modified layer to produce a semiconductor wafer 9'.

於進行前述分割步驟後進行前述第2切斷步驟之情形時,保護膜13'之切斷例如可藉由將保護膜13'沿相對於保護膜13'中之對半導體晶片9之貼附面(亦即,第1面13a')呈平行的方向拉伸(亦即所謂的擴展)而進行。經擴展之保護膜13'係沿著半導體晶片9的外周被切斷。此種利用擴展之切斷較佳為於-20℃至5℃等低溫下進行。In the case where the second cutting step is performed after the aforementioned dividing step, the protective film 13' can be cut, for example, by aligning the protective film 13' along the surface of the protective film 13' to which the semiconductor chip 9 is attached. (That is, the first surface 13a') is stretched in a parallel direction (that is, so-called expansion). The expanded protective film 13 ′ is cut along the outer periphery of the semiconductor wafer 9. Such cutting by extension is preferably performed at a low temperature such as -20°C to 5°C.

於同時進行前述分割步驟及第2切斷步驟之情形時,可藉由使用刀片之刀片切割、利用雷射照射之雷射切割、或利用包含研磨劑之水噴附之水切割等各種切割,而同時進行半導體晶圓9之分割及保護膜13'之切斷。 另外,將藉由隱形切割(註冊商標)形成改質層且未進行分割之半導體晶圓9與保護膜13'一起利用與上述同樣的方法進行擴展,藉此亦能夠同時進行半導體晶圓9之分割及保護膜13'之切斷。When the aforementioned dividing step and the second cutting step are performed at the same time, various types of cutting can be performed, such as cutting with a blade using a blade, laser cutting with laser irradiation, or water cutting with water spray containing abrasives. At the same time, the division of the semiconductor wafer 9 and the cutting of the protective film 13' are performed. In addition, the semiconductor wafer 9 with a modified layer formed by stealth dicing (registered trademark) without being divided and the protective film 13' are expanded by the same method as above, whereby the semiconductor wafer 9 can also be simultaneously expanded Dividing and cutting off the protective film 13'.

於進行前述第2切斷步驟後進行前述分割步驟之情形時,可藉由與上述同樣的各切割時的方法,在不分割半導體晶圓9的前提下來切斷保護膜13',繼而,可藉由裂片(breaking)而分割半導體晶圓9。In the case of performing the aforementioned dividing step after the aforementioned second cutting step, the protective film 13' can be cut without dividing the semiconductor wafer 9 without dividing the semiconductor wafer 9 by the same method for each cutting as described above, and then, The semiconductor wafer 9 is divided by breaking.

[拾取步驟] 於製造方法(1)的拾取步驟中,如圖6C所示,將具備切斷後的保護膜130'之半導體晶片9'、亦即附保護膜之半導體晶片91自包含防污片10及黏著片8之積層片810扯離而進行拾取。此處,以箭頭I表示拾取方向。可利用公知的方法拾取附保護膜之半導體晶片91。例如,作為用以將附保護膜之半導體晶片91自積層片810扯離之扯離機構7,可列舉真空筒夾(collet)等。此外,圖6C中,僅剖面表示了扯離機構7,這於後續的同樣的圖中亦相同。 藉由以上步驟,獲得目標之附保護膜之半導體晶片91。[Pickup Step] In the pick-up step of the manufacturing method (1), as shown in FIG. 6C, the semiconductor chip 9'with the cut protective film 130', that is, the protective film-attached semiconductor chip 91 is self-contained with the antifouling sheet 10 and the adhesive sheet The 8 laminated pieces 810 are pulled apart and picked up. Here, arrow I indicates the pick-up direction. The semiconductor wafer 91 with a protective film can be picked up by a well-known method. For example, as the pulling-off mechanism 7 for pulling the protective film-attached semiconductor wafer 91 from the laminated sheet 810, a vacuum collet or the like can be cited. In addition, in FIG. 6C, only the pull-off mechanism 7 is shown in cross section, which is the same in the same subsequent drawings. Through the above steps, the target semiconductor chip 91 with a protective film is obtained.

拾取步驟中,亦可一邊將防污片10於相對於該防污片10之保護膜側的面(亦即,第1面10a)呈平行的方向上擴張,一邊拾取附保護膜之半導體晶片91。In the picking step, the antifouling sheet 10 can also be expanded in a direction parallel to the surface of the antifouling sheet 10 on the side of the protective film (ie, the first surface 10a), while picking up the semiconductor wafer with the protective film 91.

[進行硬化步驟之時機] 前文中,對在前述操作步驟(例如印字步驟)與前述第2貼附步驟之間進行前述硬化步驟之情形進行了說明,但製造方法(1)中,進行硬化步驟之時機並不限定於此。例如,製造方法(1)中,硬化步驟可於第2貼附步驟與分割步驟之間、第2貼附步驟與第2切斷步驟之間、分割步驟與拾取步驟之間、切斷步驟與拾取步驟之間、拾取步驟之後的任意時機進行。[Timing of the hardening step] In the foregoing, the case where the hardening step is performed between the operation step (for example, the printing step) and the second attaching step has been described, but in the manufacturing method (1), the timing of the hardening step is not limited to this . For example, in the manufacturing method (1), the curing step may be between the second attaching step and the dividing step, between the second attaching step and the second cutting step, between the dividing step and the picking step, between the cutting step and the cutting step. It is performed at any timing between the picking steps and after the picking step.

例如,前述第2切斷步驟中,於切斷保護膜形成用膜之情形時,作為該保護膜形成用膜之切斷方法,可應用上述之保護膜13'之切斷方法。 例如,前述拾取步驟中,於拾取具備半導體晶片、及設置於半導體晶片的內面之切斷後的保護膜形成用膜而構成之附保護膜形成用膜之半導體晶片之情形時,作為該附保護膜形成用膜之半導體晶片之拾取方法,可應用上述之附保護膜之半導體晶片91之拾取方法。For example, in the above-mentioned second cutting step, when cutting the protective film forming film, as the cutting method of the protective film forming film, the above-mentioned cutting method of the protective film 13' can be applied. For example, in the aforementioned picking step, when picking up a semiconductor wafer with a protective film forming film formed of a semiconductor wafer and a protective film forming film provided on the inner surface of the semiconductor wafer, it is treated as the protective film The pick-up method of the semiconductor wafer of the film for film formation can apply the pick-up method of the semiconductor wafer 91 with a protective film mentioned above.

[其他步驟] 製造方法(1)除了前述第1貼附步驟、第1切斷步驟、操作步驟、硬化步驟、第2貼附步驟、分割步驟、第2切斷步驟、及拾取步驟之各步驟以外,亦可具有其他步驟。 前述其他步驟的種類及進行前述其他步驟之時機可根據目的任意選擇,並無特別限定。[Other steps] The manufacturing method (1) may be in addition to the first attaching step, the first cutting step, the operation step, the curing step, the second attaching step, the dividing step, the second cutting step, and the picking step mentioned above. There are other steps. The types of the aforementioned other steps and the timing of performing the aforementioned other steps can be arbitrarily selected according to the purpose, and are not particularly limited.

例如,於第1貼附步驟中所使用之半導體晶圓9的電路形成面9a貼附有背面研磨膠帶之情形時,製造方法(1)亦可具有將該背面研磨膠帶自前述電路形成面9a移除之背面研磨膠帶去除步驟。 進行背面研磨膠帶去除步驟之時機例如考慮前述分割步驟、第2切斷步驟之方法等前述製造方法的所有條件而適宜選擇即可。 於進行背面研磨膠帶去除步驟之情形時,進行前述硬化步驟之時機例如可為選自由背面研磨膠帶去除步驟、第2貼附步驟、分割步驟、第2切斷步驟、及拾取步驟所組成之群組中的2步驟之間。For example, when a back surface polishing tape is attached to the circuit forming surface 9a of the semiconductor wafer 9 used in the first attaching step, the manufacturing method (1) may include removing the back surface polishing tape from the circuit forming surface 9a. Remove the back grinding tape removal step. The timing of performing the back polishing tape removal step may be appropriately selected in consideration of all the conditions of the aforementioned manufacturing method, such as the method of the aforementioned dividing step and the second cutting step. In the case of performing the back polishing tape removal step, the timing for performing the aforementioned hardening step may be selected from the group consisting of, for example, the back polishing tape removal step, the second attaching step, the dividing step, the second cutting step, and the picking step. Between 2 steps in the group.

例如,製造方法(1)亦可在前述分割步驟或第2切斷步驟與前述拾取步驟之間,具有將附保護膜之半導體晶片91或附保護膜之半導體晶片群903利用水進行洗淨之洗淨步驟。前述洗淨步驟中,將前述分割步驟中因半導體晶圓9之分割所產生之分割屑、或前述切斷步驟中因保護膜13'之切斷所產生之切斷屑等沖掉。For example, the manufacturing method (1) may have a method of washing the protective film-attached semiconductor wafer 91 or the protective film-attached semiconductor wafer group 903 with water between the aforementioned dividing step or the second cutting step and the aforementioned pickup step. Washing steps. In the aforementioned cleaning step, the cutting chips generated by the division of the semiconductor wafer 9 in the aforementioned dividing step or the cutting chips generated by the cutting of the protective film 13' in the aforementioned cutting step are washed away.

[製造方法(2)] 前文中,對具有前述硬化步驟之情形時的附保護膜之半導體晶片之製造方法進行了說明,但本實施形態的製造方法亦可不具有前述硬化步驟。 其次,以下對此種不具有前述硬化步驟之情形時的製造方法(本說明書中,有時稱為「製造方法(2)」)進行說明。 製造方法(2)中,由於保護膜形成用膜為非硬化性,故而貼附於半導體晶圓的內面之後的保護膜形成用膜為保護膜。 圖7A至圖7C及圖8A至圖8C係用於以示意方式說明前述製造方法(2)的一例之剖視圖。[Manufacturing method (2)] In the foregoing, the method of manufacturing a semiconductor wafer with a protective film in the case of having the aforementioned curing step has been described, but the manufacturing method of this embodiment may not have the aforementioned curing step. Next, the manufacturing method (in this specification, it may be referred to as "manufacturing method (2)") in the case of not having the aforementioned curing step will be described below. In the manufacturing method (2), since the film for forming a protective film is non-curable, the film for forming a protective film after being attached to the inner surface of the semiconductor wafer is a protective film. FIGS. 7A to 7C and FIGS. 8A to 8C are cross-sectional views for schematically explaining an example of the aforementioned manufacturing method (2).

[第1貼附步驟] 於製造方法(2)的前述第1貼附步驟中,如圖7A所示,將保護膜形成用複合片103中的保護膜形成用膜23貼附於大小小於前述保護膜形成用膜23之半導體晶圓9的內面9b的整面。此時,一邊將保護膜形成用複合片103於相對於該保護膜形成用複合片103中之對半導體晶圓之貼附面103a呈平行的方向上拉伸,一邊將保護膜形成用複合片103貼附於半導體晶圓9的內面9b。藉此,製作於半導體晶圓9的內面9b設置保護膜形成用複合片103而構成之第1積層體904。圖7A至圖7C中,符號23a表示保護膜形成用膜23之半導體晶圓9側的面(本說明書中,有時稱為「第1面」),這與保護膜形成用複合片103中之對半導體晶圓9之貼附面103a的含義相同。[First attaching step] In the first attaching step of the manufacturing method (2), as shown in FIG. 7A, the protective film forming film 23 in the protective film forming composite sheet 103 is attached to a size smaller than that of the protective film forming film 23. The entire surface of the inner surface 9b of the semiconductor wafer 9. At this time, the composite sheet for forming a protective film 103 is stretched in a direction parallel to the attaching surface 103a of the semiconductor wafer in the composite sheet for forming a protective film 103, while the composite sheet for forming a protective film is stretched 103 is attached to the inner surface 9b of the semiconductor wafer 9. Thereby, the 1st laminated body 904 which provided the composite sheet|seat 103 for protective film formation on the inner surface 9b of the semiconductor wafer 9 was produced. In FIGS. 7A to 7C, the symbol 23a indicates the surface of the protective film forming film 23 on the semiconductor wafer 9 side (in this specification, it may be referred to as the "first surface"), which is the same as the protective film forming composite sheet 103 This has the same meaning for the attachment surface 103a of the semiconductor wafer 9.

前述第1貼附步驟中,如上所述,一邊將保護膜形成用複合片103拉伸,一邊將保護膜形成用膜23貼附於半導體晶圓9的內面9b整面時,防污片10不會被切斷,亦不會產生褶皺,顯示良好的貼附適性。原因在於,防污片10之前述試片具有如上述之15%伸長性。In the first attaching step, as described above, when the protective film forming film 23 is attached to the entire inner surface 9b of the semiconductor wafer 9 while the protective film forming composite sheet 103 is stretched, the antifouling sheet 10 will not be cut, and will not produce wrinkles, showing good adherence. The reason is that the aforementioned test piece of the antifouling sheet 10 has the above-mentioned 15% elongation.

前述第1貼附步驟中,作為保護膜形成用複合片103,使用了保護膜形成用膜23的大小大於半導體晶圓9的大小(換言之,保護膜形成用膜23的第1面23a的面積大於半導體晶圓9的內面9b的面積)之保護膜形成用複合片。藉此,能夠將保護膜形成用膜23貼附於半導體晶圓9的內面9b的整面。In the aforementioned first attaching step, as the protective film forming composite sheet 103, the protective film forming film 23 is used. The size of the protective film forming film 23 is larger than the size of the semiconductor wafer 9 (in other words, the area of the first surface 23a of the protective film forming film 23 is A composite sheet for forming a protective film larger than the area of the inner surface 9b of the semiconductor wafer 9). Thereby, the protective film forming film 23 can be attached to the entire inner surface 9b of the semiconductor wafer 9.

製造方法(2)中,保護膜形成用膜23可不硬化而以原本的狀態用作保護膜,將於前述第1貼附步驟中貼附於半導體晶圓9的內面9b之後的保護膜形成用膜23視作保護膜23。 保護膜形成用複合片103除了具備保護膜形成用膜23代替保護膜形成用膜13之方面以外,與上述之保護膜形成用複合片101相同。In the manufacturing method (2), the protective film forming film 23 can be used as a protective film in its original state without curing, and the protective film after being attached to the inner surface 9b of the semiconductor wafer 9 in the first attaching step is formed The film 23 is regarded as a protective film 23. The composite sheet 103 for protective film formation is the same as the composite sheet 101 for protective film formation mentioned above except the point provided with the film 23 for protective film formation instead of the film 13 for protective film formation.

本步驟除了使用保護膜形成用複合片103代替保護膜形成用複合片101之方面以外,可利用與製造方法(1)中的第1貼附步驟之情形相同的方法進行。 例如,於製造方法(2)的第1貼附步驟中,使保護膜形成用複合片103之相對於該保護膜形成用複合片103中之對半導體晶圓9之貼附面103a(亦即,保護膜形成用膜23的第1面23a)呈平行的方向上的寬度W103 的最大值,相對於半導體晶圓9之相對於該半導體晶圓9中之與保護膜形成用複合片103之貼附面(亦即,內面)9b呈平行的方向上的寬度W9 的最大值成為101.1%至129.3%。藉此,能夠容易地進行後續之第1切斷步驟。更具體而言,藉由使寬度W103 的最大值相對於寬度W9 的最大值成為101.1%以上,於第1切斷步驟中,容易回收保護膜形成用複合片103之被切斷之部位。藉由使寬度W103 的最大值相對於寬度W9 的最大值成為129.3%以下,第1積層體904的操作性提高,進而藉由削減保護膜形成用複合片103的廢棄量而能夠降低成本。This step can be performed by the same method as in the case of the first attaching step in the manufacturing method (1), except that the composite sheet 103 for forming a protective film is used instead of the composite sheet 101 for forming the protective film. For example, in the first attaching step of the manufacturing method (2), the protective film forming composite sheet 103 is made to face the attaching surface 103a (that is, to the semiconductor wafer 9) of the protective film forming composite sheet 103 , The first surface 23a) of the protective film forming film 23 has the maximum value of the width W 103 in the parallel direction, relative to the semiconductor wafer 9 with respect to the protective film forming composite sheet 103 The maximum value of the width W 9 in the parallel direction of the attachment surface (ie, the inner surface) 9b becomes 101.1% to 129.3%. Thereby, the subsequent first cutting step can be easily performed. More specifically, by making the maximum value of the width W 103 relative to the maximum value of the width W 9 101.1% or more, it is easy to recover the cut portion of the protective film forming composite sheet 103 in the first cutting step . By making the maximum value of the width W 103 relative to the maximum value of the width W 9 129.3% or less, the operability of the first laminate 904 is improved, and further, the cost can be reduced by reducing the waste amount of the composite sheet 103 for forming a protective film .

此外,圖7A中,與圖5A之情形同樣地,顯示出前述寬度W103 及前述寬度W9 均成為最大之部位處的保護膜形成用複合片103及半導體晶圓9的剖面,圖7B至圖7C及圖8A至圖8C中亦顯示出相同部位處的對象物的剖面。In addition, in FIG. 7A, similar to the case of FIG. 5A, the cross section of the protective film forming composite sheet 103 and the semiconductor wafer 9 where the aforementioned width W 103 and the aforementioned width W 9 both become the largest is shown, and FIGS. 7B to Fig. 7C and Figs. 8A to 8C also show the cross section of the object at the same position.

[第1切斷步驟] 於製造方法(2)的前述第1切斷步驟中,將第1積層體904中的保護膜形成用複合片103沿著半導體晶圓9的外周切斷。藉此,如圖7B所示,製作出於半導體晶圓9的內面9b設置有切斷後的保護膜形成用複合片103之第2積層體904'。[First cutting step] In the aforementioned first cutting step of the manufacturing method (2), the protective film forming composite sheet 103 in the first laminate 904 is cut along the outer periphery of the semiconductor wafer 9. Thereby, as shown in FIG. 7B, the second laminated body 904' provided with the composite sheet 103 for forming a protective film after the cut is provided on the inner surface 9b of the semiconductor wafer 9 is produced.

本步驟除了使用保護膜形成用複合片103代替保護膜形成用複合片101之方面以外,可利用與製造方法(1)中的第1切斷步驟之情形相同的方法進行。 例如,切斷後的保護膜形成用複合片103的寬度W103 '的最大值相對於前述W103 的最大值為同等以下,相對於前述W9 的最大值為同等以上。This step can be performed by the same method as in the case of the first cutting step in the manufacturing method (1), except that the composite sheet 103 for forming a protective film is used instead of the composite sheet 101 for forming the protective film. For example, the maximum value of the width W 103 ′ of the composite sheet 103 for forming a protective film after being cut is equal to or less than the maximum value of W 103 , and equal to or more than the maximum value of W 9.

例如,於製造方法(2)的第1切斷步驟中,亦與製造方法(1)的第1切斷步驟之情形同樣地,可使用如圖2所示之整體的平面形狀為矩形狀或帶狀之保護膜形成用複合片,該情形時,可利用上文說明之2種方法連續地製作多個第2積層體904'。For example, in the first cutting step of the manufacturing method (2), as in the case of the first cutting step of the manufacturing method (1), the overall planar shape as shown in FIG. 2 can be used as a rectangle or In this case, a strip-shaped composite sheet for forming a protective film can be used to continuously produce a plurality of second layered bodies 904' by the two methods described above.

前述第1切斷步驟中,第1積層體904中的保護膜形成用複合片103容易被切斷,該切斷面中毛邊之產生得到抑制,顯示良好的切斷適性。原因在於,第1積層體904中的保護膜形成用複合片103保持以上述方式拉伸之狀態而設置於半導體晶圓9的內面9b,進而,防污片10之前述試片具有如上述之10%伸長時的拉伸強度。In the aforementioned first cutting step, the composite sheet 103 for forming a protective film in the first laminate 904 is easily cut, the generation of burrs in the cut surface is suppressed, and good cutting suitability is exhibited. The reason is that the composite sheet 103 for forming a protective film in the first layered body 904 is provided on the inner surface 9b of the semiconductor wafer 9 while maintaining the state stretched in the above-mentioned manner. Furthermore, the aforementioned test piece of the antifouling sheet 10 has the above-mentioned The tensile strength at 10% elongation.

如此,保護膜形成用複合片103於第1貼附步驟中具有良好的貼附適性,於第1切斷步驟中具有良好的切斷適性,藉此能夠根據半導體晶圓9的大小藉由切斷來良好地調節保護膜形成用複合片103的大小。In this way, the protective film forming composite sheet 103 has good adhesion adaptability in the first attaching step, and good cutting adaptability in the first cutting step, so that it can be cut according to the size of the semiconductor wafer 9 The size of the composite sheet 103 for forming a protective film is adjusted well.

前述第1切斷步驟中,藉由保護膜形成用複合片103的寬度W103 的最大值相對於半導體晶圓9的寬度W9 的最大值為101.1%至129.3%,能夠將第1積層體904無問題地設置於通常的切斷裝置的內部。In the above-mentioned first cutting step, since the maximum value of the width W 103 of the protective film forming composite sheet 103 with respect to the maximum value of the width W 9 of the semiconductor wafer 9 is 101.1% to 129.3%, the first laminate can be 904 is installed inside a normal cutting device without any problems.

[操作步驟] 製造方法(2)的前述操作步驟中的第2積層體904'的操作的種類係與製造方法(1)中的第2積層體901'的操作的種類相同。[Steps] The type of operation of the second layered body 904' in the aforementioned operation steps of the manufacturing method (2) is the same as the type of operation of the second layered body 901' in the manufacturing method (1).

於第2積層體904'中的保護膜23中之與第1面23a為相反側的面(本說明書中,有時稱為「第2面」)23b貼附有防污片10。因此,操作步驟中,無論第2積層體904'的操作的種類為何,均可抑制不預期的異物附著於第2積層體904'中的保護膜23、尤其是附著於保護膜23的第2面23b。 如此,保護膜形成用複合片103於半導體晶圓9的內面9b藉由保護膜形成用膜23形成保護膜,不僅如此,於半導體晶圓9之分割前,將第2積層體904'予以操作時,藉由防污片10抑制不預期的異物附著於保護膜形成用膜23(亦即,保護膜23)。The antifouling sheet 10 is attached to the surface 23b on the opposite side to the first surface 23a of the protective film 23 in the second layered body 904' (in this specification, it may be referred to as the "second surface"). Therefore, in the operation step, regardless of the type of operation of the second layered body 904', it is possible to suppress the adhesion of unexpected foreign matter to the protective film 23 in the second layered body 904', especially the second layer of the protective film 23.面23b. In this way, the protective film forming composite sheet 103 forms a protective film with the protective film forming film 23 on the inner surface 9b of the semiconductor wafer 9. Not only that, the second laminated body 904' is formed before the division of the semiconductor wafer 9 During the operation, the antifouling sheet 10 prevents unintended foreign matter from adhering to the protective film forming film 23 (that is, the protective film 23).

較佳的前述操作步驟例如係如圖7C所示藉由對第2積層體904'中的保護膜23照射雷射光L而進行印字(雷射印字)之印字步驟。 雷射印字可藉由對第2積層體904'中的保護膜23自第2積層體904'之防污片10側的外部隔著防污片10照射雷射光L而進行。此時,印字(省略圖示)係施加於保護膜23的第2面23b。 此外,此處對進行雷射印字後的第2積層體904'賦予新的符號905。Preferably, the foregoing operation steps are, for example, a printing step of printing (laser printing) by irradiating the protective film 23 in the second laminate 904' with laser light L as shown in FIG. 7C. Laser printing can be performed by irradiating the protective film 23 in the second layered body 904' with laser light L from the outside on the side of the antifouling sheet 10 of the second layered body 904' through the antifouling sheet 10. At this time, printing (not shown) is applied to the second surface 23 b of the protective film 23. In addition, here, a new symbol 905 is assigned to the second layered body 904' after laser printing.

本步驟中,雷射印字除了雷射光L之照射對象為保護膜23而非保護膜形成用膜13之方面以外,可利用與製造方法(1)中的雷射印字之情形相同的方法進行。 例如,藉由切斷後的保護膜形成用複合片103的寬度W103 '的最大值相對於前述W103 的最大值為同等以下,能夠將第2積層體904'無問題地設置於通常的雷射印字裝置的內部。 另外,防污片10的透過清晰度越高,例如於為100以上等之情形時,能夠對保護膜23更清晰地印字。並且,在印字步驟結束後,防污片10的透過清晰度越高,例如於為100以上等之情形時,形成於保護膜23之雷射印字經由防污片10之雷射印字視認性變得更高。In this step, the laser printing can be performed by the same method as the laser printing in the manufacturing method (1) except that the target of the laser light L is the protective film 23 instead of the protective film forming film 13. For example, since the maximum value of the width W 103 ′ of the composite sheet 103 for forming a protective film after being cut is equal to or less than the maximum value of the aforementioned W 103 , the second layered body 904 ′ can be installed in a normal mine without problems. The inside of the printing device. In addition, the higher the transmission clarity of the antifouling sheet 10, for example, when it is 100 or more, the protective film 23 can be printed more clearly. Moreover, after the printing step, the transparency of the anti-fouling sheet 10 becomes higher. For example, when it is 100 or more, the visibility of the laser printing formed on the protective film 23 is changed by the laser printing of the anti-fouling sheet 10. Get higher.

[第2貼附步驟] 於製造方法(2)的前述第2貼附步驟中,如圖8A所示,於前述操作步驟之後,於操作後的積層體(此處為雷射印字完畢之第2積層體905)中的防污片10中之與保護膜23之側為相反側的面(亦即,第2面)10b貼附黏著片8。 本步驟除了黏著片8之貼附對象為保護膜形成用複合片103而非保護膜形成用複合片101之方面以外,可利用與製造方法(1)中的第2貼附步驟之情形相同的方法進行。[Second attachment step] In the foregoing second attaching step of the manufacturing method (2), as shown in FIG. 8A, after the foregoing operation steps, in the laminated body after the operation (here, the laser-printed second laminated body 905) The adhesive sheet 8 is attached to the surface 10b of the antifouling sheet 10 on the opposite side to the side of the protective film 23 (that is, the second surface). In this step, except that the object to be attached to the adhesive sheet 8 is the composite sheet 103 for forming a protective film instead of the composite sheet 101 for forming a protective film, the same as the case of the second attaching step in the manufacturing method (1) can be used. Method to proceed.

[分割步驟、第2切斷步驟] 製造方法(2)中,於第2貼附步驟之後,進行藉由分割半導體晶圓9而製作半導體晶片9'之分割步驟、及切斷保護膜23之第2切斷步驟。 進行前述分割步驟及第2切斷步驟之順序與製造方法(1)之情形相同。[Division step, 2nd cutting step] In the manufacturing method (2), after the second attaching step, the dividing step of producing the semiconductor wafer 9'by dividing the semiconductor wafer 9 and the second cutting step of cutting the protective film 23 are performed. The order of performing the aforementioned dividing step and the second cutting step is the same as in the case of the manufacturing method (1).

製造方法(2)中,藉由進行前述分割步驟及第2切斷步驟,如圖8B所示,獲得具備半導體晶片9'、及設置於半導體晶片9'的內面9b'之切斷後的保護膜230而構成之多個附保護膜之半導體晶片92。本步驟中,獲得這些多個附保護膜之半導體晶片92全部排列於1片防污片10上之狀態的附保護膜之半導體晶片群906。 圖8B至圖8C中,符號230a表示切斷後的保護膜230中之與黏著劑層12側為相反側的面(本說明書中,有時稱為「第1面」),符號230b表示切斷後的保護膜230中之與第1面230a為相反側的面(本說明書中,有時稱為「第2面」)。In the manufacturing method (2), by performing the aforementioned dividing step and the second cutting step, as shown in FIG. 8B, a protection after cutting including a semiconductor wafer 9'and an inner surface 9b' provided on the semiconductor wafer 9'is obtained A plurality of protective film-attached semiconductor wafers 92 constituted by a film 230. In this step, a group of semiconductor wafers with a protective film 906 in a state where all of these plurality of semiconductor wafers 92 with a protective film are arranged on one antifouling sheet 10 is obtained. In FIGS. 8B to 8C, the symbol 230a indicates the surface of the cut protective film 230 on the side opposite to the adhesive layer 12 side (in this specification, it may be referred to as the "first surface"), and the symbol 230b indicates the cut surface In the protective film 230, the surface on the opposite side to the first surface 230a (in this specification, it may be referred to as the "second surface").

製造方法(2)中的分割步驟可利用與製造方法(1)中的分割步驟之情形相同的方法進行。 製造方法(2)中的第2切斷步驟除了切斷之對象為保護膜23而非保護膜13'之方面以外,可利用與製造方法(1)中的第2切斷步驟之情形相同的方法進行。The dividing step in the manufacturing method (2) can be performed by the same method as in the case of the dividing step in the manufacturing method (1). The second cutting step in the manufacturing method (2) can be the same as the second cutting step in the manufacturing method (1) except that the object of cutting is the protective film 23 instead of the protective film 13'. Method to proceed.

[拾取步驟] 於製造方法(2)的前述拾取步驟中,如圖8C所示,將具備切斷後的保護膜230之半導體晶片9'、亦即附保護膜之半導體晶片92自包含防污片10及黏著片8之積層片810扯離而進行拾取。 本步驟除了拾取之對象為附保護膜之半導體晶片92而非附保護膜之半導體晶片91之方面以外,可利用與製造方法(1)中的拾取步驟之情形相同的方法進行。 藉由以上步驟,獲得目標之附保護膜之半導體晶片92。[Pickup Step] In the aforementioned pick-up step of the manufacturing method (2), as shown in FIG. 8C, the semiconductor chip 9'with the cut protective film 230, that is, the semiconductor chip 92 with the protective film, is self-contained with the antifouling sheet 10 and the adhesive sheet The 8 laminated pieces 810 are pulled apart and picked up. This step can be performed by the same method as in the case of the pickup step in the manufacturing method (1), except that the object to be picked up is the semiconductor wafer 92 with a protective film instead of the semiconductor wafer 91 with a protective film. Through the above steps, the target semiconductor chip 92 with a protective film is obtained.

[其他步驟] 製造方法(2)除了前述第1貼附步驟、第1切斷步驟、操作步驟、第2貼附步驟、分割步驟、第2切斷步驟、及拾取步驟之各步驟以外,亦可具有其他步驟。但是,製造方法(2)中的前述其他步驟中不包括於前述操作步驟之後使前述保護膜形成用膜硬化之硬化步驟。作為製造方法(2)中的前述其他步驟,可列舉與製造方法(1)中的前述其他步驟相同的步驟。 前述其他步驟的種類及進行前述其他步驟之時機可根據目的任意選擇,並無特別限定。[Other steps] The manufacturing method (2) may have other steps in addition to the first attaching step, the first cutting step, the operation step, the second attaching step, the dividing step, the second cutting step, and the picking step mentioned above. . However, the aforementioned other steps in the manufacturing method (2) do not include a curing step of curing the aforementioned protective film forming film after the aforementioned operation step. As the aforementioned other steps in the manufacturing method (2), the same steps as the aforementioned other steps in the manufacturing method (1) can be cited. The types of the aforementioned other steps and the timing of performing the aforementioned other steps can be arbitrarily selected according to the purpose, and are not particularly limited.

例如,於第1貼附步驟中所使用之半導體晶圓9的電路形成面9a貼附有背面研磨膠帶之情形時,製造方法(2)亦可具有將該背面研磨膠帶自前述電路形成面9a移除之背面研磨膠帶去除步驟。 進行背面研磨膠帶去除步驟之時機例如考慮前述分割步驟、第2切斷步驟之方法等前述製造方法的所有條件而適宜選擇即可。For example, when a back polishing tape is attached to the circuit forming surface 9a of the semiconductor wafer 9 used in the first attaching step, the manufacturing method (2) may include removing the back polishing tape from the circuit forming surface 9a. Remove the back grinding tape removal step. The timing of performing the back polishing tape removal step may be appropriately selected in consideration of all the conditions of the aforementioned manufacturing method, such as the method of the aforementioned dividing step and the second cutting step.

例如,製造方法(2)亦可於前述分割步驟或第2切斷步驟與前述拾取步驟之間,具有將附保護膜之半導體晶片92或附保護膜之半導體晶片群906利用水進行洗淨之洗淨步驟。前述洗淨步驟中,將前述分割步驟中因半導體晶圓9之分割而產生之分割屑、或前述切斷步驟中因保護膜23之切斷而產生之切斷屑等沖掉。For example, the manufacturing method (2) may have a method of washing the protective film-attached semiconductor wafer 92 or the protective film-attached semiconductor wafer group 906 with water between the aforementioned dividing step or the second cutting step and the aforementioned pickup step. Washing steps. In the aforementioned cleaning step, the cutting chips generated by the division of the semiconductor wafer 9 in the aforementioned dividing step or the cutting chips generated by the cutting of the protective film 23 in the aforementioned cutting step are washed away.

前文中,主要對使用圖1所示之保護膜形成用複合片101之情形時的附保護膜之半導體晶片之製造方法進行了說明,但本實施形態的附保護膜之半導體晶片之製造方法並不限定於此。 例如,本實施形態的附保護膜之半導體晶片之製造方法即便使用圖4所示之保護膜形成用複合片102等為圖1所示之保護膜形成用複合片101以外的保護膜形成用複合片,亦能夠同樣地製造附保護膜之半導體晶片。 如此,於使用其他實施形態的保護膜形成用複合片之情形時,基於該複合片與保護膜形成用複合片101之結構的不同,於上述之製造方法中適宜進行步驟之追加、變更、刪除等而製造半導體晶片即可。In the foregoing, the method of manufacturing a semiconductor wafer with a protective film when the composite sheet 101 for forming a protective film shown in FIG. 1 is used has been mainly described. However, the method of manufacturing a semiconductor wafer with a protective film of this embodiment is not Not limited to this. For example, in the method of manufacturing a semiconductor wafer with a protective film of this embodiment, even if the protective film forming composite sheet 102 shown in FIG. 4 is used as a protective film forming composite sheet other than the protective film forming composite sheet 101 shown in FIG. It is also possible to manufacture semiconductor wafers with protective films in the same way. In this way, when the composite sheet for forming a protective film of another embodiment is used, based on the difference in structure between the composite sheet and the composite sheet for forming a protective film 101, it is appropriate to add, change, and delete steps in the above-mentioned manufacturing method. The semiconductor wafer can be manufactured by waiting.

前文中所說明之附保護膜之半導體晶片之製造方法亦可於將保護膜形成用複合片貼附於半導體晶圓之步驟(亦即,第1貼附步驟)之後,具有根據半導體晶圓的大小而切斷保護膜形成用複合片之步驟(亦即,第1切斷步驟)。 本實施形態的保護膜形成用複合片由於具有上述之拉伸特性(15%伸長性、10%伸長時的拉伸強度),故而能夠根據半導體晶圓的大小藉由切斷來良好地調節該保護膜形成用複合片的大小。 但是,本實施形態的保護膜形成用複合片亦可用於其他方法。The method for manufacturing a semiconductor chip with a protective film described in the foregoing may also have a method according to the semiconductor wafer after the step of attaching the composite sheet for forming a protective film to the semiconductor wafer (that is, the first attaching step) The step of cutting the composite sheet for forming a protective film to the size (that is, the first cutting step). Since the composite sheet for forming a protective film of this embodiment has the above-mentioned tensile properties (15% elongation, 10% elongation tensile strength), it can be well adjusted by cutting according to the size of the semiconductor wafer. The size of the composite sheet for forming a protective film. However, the composite sheet for forming a protective film of this embodiment can also be used in other methods.

例如,亦可將保護膜形成用複合片預先配合目標半導體晶圓的大小來加以切斷,將該切斷後的保護膜形成用複合片貼附於半導體晶圓,然後,利用與上述之製造方法相同的方法,製造附保護膜之半導體晶片。例如,具有以下步驟之方法符合該方法:使用如圖2所示之整體的平面形狀為矩形狀或帶狀之保護膜形成用複合片,將該保護膜形成用複合片貼附於半導體晶圓之前,配合半導體晶圓的大小來預先切斷,將所獲得之切片(例如,整體的平面形狀為圓形狀之切片)作為目標之保護膜形成用複合片來貼附於半導體晶圓。若將此時的保護膜形成用複合片之切斷作為沖裁加工進行,且於切斷前的保護膜形成用複合片的長度方向上多次進行該沖裁加工,則例如獲得圖3所示之構成之保護膜形成用複合片。For example, it is also possible to cut the composite sheet for forming a protective film according to the size of the target semiconductor wafer in advance, and attach the cut composite sheet for forming a protective film to the semiconductor wafer, and then use the same manufacturing method as described above. In the same way, a semiconductor wafer with a protective film is manufactured. For example, a method having the following steps corresponds to the method: using a composite sheet for forming a protective film whose overall planar shape is rectangular or strip-shaped as shown in FIG. 2, and attaching the composite sheet for forming a protective film to a semiconductor wafer Previously, it was cut in advance according to the size of the semiconductor wafer, and the obtained slice (for example, the slice whose overall planar shape was a circular shape) was used as the target protective film forming composite sheet and attached to the semiconductor wafer. If the cutting of the composite sheet for forming a protective film at this time is performed as a punching process, and the punching process is performed multiple times in the longitudinal direction of the composite sheet for forming a protective film before cutting, for example, as shown in FIG. 3 A composite sheet for forming a protective film of the constitution shown.

◇半導體裝置之製造方法 藉由上述之製造方法而獲得附保護膜之半導體晶片後,藉由公知的方法將該半導體晶片覆晶連接於基板的電路形成面後,製成半導體封裝體,藉由使用該半導體封裝體而能夠製造目標半導體裝置(省略圖示)。 [實施例]◇Method of manufacturing semiconductor device After the semiconductor chip with protective film is obtained by the above-mentioned manufacturing method, the semiconductor chip is flip-chip connected to the circuit forming surface of the substrate by a known method, and then a semiconductor package is made. The target semiconductor device (illustration omitted) can be manufactured. [Example]

以下,藉由具體的實施例對本發明更詳細地進行說明。但是,本發明完全不受限於以下所示之實施例。Hereinafter, the present invention will be described in more detail with specific examples. However, the present invention is not limited at all to the examples shown below.

[保護膜形成用組成物的製造原料] 以下表示用於製造保護膜形成用組成物之原料。 [聚合物成分(A)] (A)-1:使丙烯酸甲酯(85質量份)及丙烯酸2-羥基乙酯(15質量份)共聚而成之丙烯酸樹脂(重量平均分子量370000、玻璃轉移溫度6℃)。 [熱硬化性成分(B)] ・環氧樹脂(B1) (B1)-1:雙酚A型環氧樹脂(三菱化學公司製造的「jER828」,環氧當量184g/eq至194g/eq) (B1)-2:雙酚A型環氧樹脂(三菱化學公司製造的「jER1055」,環氧當量800g/eq至900g/eq) (B1)-3:二環戊二烯型環氧樹脂(DIC公司製造的「Epiclon HP-7200HH」,環氧當量255g/eq至260g/eq) ・熱硬化劑(B2) (B2)-1:雙氰胺(熱活性潛伏性環氧樹脂硬化劑,ADEKA公司製造的「Adeka Hardener EH-3636AS」,活性氫量21g/eq) [硬化促進劑(C)] (C)-1:2-苯基-4,5-二羥基甲基咪唑(四國化成工業公司製造的「Curezol 2PHZ」) [填充材料(D)] (D)-1:二氧化矽填料(Admatechs公司製造的「SC2050MA」,利用環氧系化合物進行了表面修飾之二氧化矽填料,平均粒徑500nm) [偶合劑(E)] (E)-1:矽烷偶合劑(Nippon Unicar公司製造的「A-1110」) [著色劑(I)] (I)-1:有機系黑色顏料(大日精化工業公司製造的「6377黑」)[Materials for the production of the protective film forming composition] The raw materials used to manufacture the protective film forming composition are shown below. [Polymer component (A)] (A)-1: Acrylic resin obtained by copolymerizing methyl acrylate (85 parts by mass) and 2-hydroxyethyl acrylate (15 parts by mass) (weight average molecular weight 370,000, glass transition temperature 6°C). [Thermosetting component (B)] ・Epoxy resin (B1) (B1)-1: Bisphenol A epoxy resin ("jER828" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 184g/eq to 194g/eq) (B1)-2: Bisphenol A epoxy resin ("jER1055" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 800g/eq to 900g/eq) (B1)-3: Dicyclopentadiene epoxy resin ("Epiclon HP-7200HH" manufactured by DIC, epoxy equivalent 255g/eq to 260g/eq) ・Thermal hardener (B2) (B2)-1: Dicyandiamide (thermally active latent epoxy resin hardener, "Adeka Hardener EH-3636AS" manufactured by ADEKA, active hydrogen content 21g/eq) [Hardening accelerator (C)] (C)-1: 2-Phenyl-4,5-dihydroxymethylimidazole ("Curezol 2PHZ" manufactured by Shikoku Chemical Industry Co., Ltd.) [Filling material (D)] (D)-1: Silica filler ("SC2050MA" manufactured by Admatechs, silica filler with epoxy compound surface modification, average particle size 500nm) [Coupling agent (E)] (E)-1: Silane coupling agent ("A-1110" manufactured by Nippon Unicar) [Colorant (I)] (I)-1: Organic black pigments ("6377 Black" manufactured by Dainichi Seiki Chemical Co., Ltd.)

[實施例1] [保護膜形成用複合片之製造] [熱硬化性保護膜形成用組成物(III-1)之製造] 將聚合物成分(A)-1(120質量份)、環氧樹脂(B1)-1(50質量份)、環氧樹脂(B1)-2(10質量份)、環氧樹脂(B1)-3(30質量份)、熱硬化劑(B2)-1(2質量份)、硬化促進劑(C)-1(2質量份)、填充材料(D)-1(320質量份)、偶合劑(E)-1(2質量份)、及著色劑(I)-1(5質量份)混合,進而利用甲基乙基酮進行稀釋,藉此製備上述之成分之合計濃度為55質量%之熱硬化性保護膜形成用組成物(III-1)。[Example 1] [Manufacturing of composite sheet for protective film formation] [Manufacturing of composition for forming thermosetting protective film (III-1)] The polymer component (A)-1 (120 parts by mass), epoxy resin (B1)-1 (50 parts by mass), epoxy resin (B1)-2 (10 parts by mass), epoxy resin (B1)- 3 (30 parts by mass), thermosetting agent (B2)-1 (2 parts by mass), hardening accelerator (C)-1 (2 parts by mass), filler (D)-1 (320 parts by mass), coupling agent (E)-1 (2 parts by mass) and coloring agent (I)-1 (5 parts by mass) are mixed, and then diluted with methyl ethyl ketone to prepare the above-mentioned components with a total concentration of 55% by mass Composition for forming a thermosetting protective film (III-1).

[保護膜形成用膜之製造] 使用聚對苯二甲酸乙二酯製膜的單面藉由聚矽氧處理進行了剝離處理之剝離膜(第1剝離膜,琳得科公司製造的「SP-PET501031」,厚度50μm),於前述剝離膜的前述剝離處理面塗敷上述獲得之熱硬化性保護膜形成用組成物(III-1),於100℃加熱乾燥2分鐘,藉此製造厚度為15μm且為帶狀之熱硬化性之保護膜形成用膜。 繼而,使用聚對苯二甲酸乙二酯製膜的單面藉由聚矽氧處理進行了剝離處理之剝離膜(第2剝離膜,琳得科公司製造的「SP-PET381031」,厚度38μm),將前述剝離膜的前述剝離處理面貼合於上述獲得之保護膜形成用膜的露出面,藉此製造第1剝離膜、保護膜形成用膜及第2剝離膜依序於這些層的厚度方向上積層而構成之帶狀之積層膜。[Manufacturing of protective film forming film] Use a peeling film made of polyethylene terephthalate on one side that has been peeled off by silicone treatment (the first peeling film, "SP-PET501031" made by Lindke, thickness 50μm), The peeling treatment surface of the peeling film is coated with the thermosetting protective film forming composition (III-1) obtained as described above, and heated and dried at 100°C for 2 minutes to produce a thermosetting tape with a thickness of 15 μm The protective film forming film. Next, a peeling film made of polyethylene terephthalate, one side of which was peeled off with silicone treatment (the second peeling film, "SP-PET381031" manufactured by Lindeco, thickness 38μm) The peeling treatment surface of the peeling film is attached to the exposed surface of the protective film forming film obtained above, thereby manufacturing the first peeling film, the protective film forming film, and the second peeling film in order of the thickness of these layers A band-shaped laminated film formed by layering in the direction.

[黏著劑組成物(I-4)之製造] 製備非能量線硬化性之黏著劑組成物(I-4),該黏著劑組成物(I-4)含有丙烯酸聚合物(100質量份)、及3官能苯二甲基二異氰酸酯系交聯劑(三井武田化學公司製造的「Takenate D110N」)(以前述交聯劑的量計為18質量份),進而含有作為溶媒之甲基乙基酮,且前述丙烯酸聚合物及交聯劑之合計濃度為55質量%。前述丙烯酸聚合物係使丙烯酸2-乙基己酯(80質量份)及丙烯酸2-羥基乙酯(20質量份)共聚而成之重量平均分子量為800000之共聚物。[Manufacturing of Adhesive Composition (I-4)] Preparation of a non-energy-ray-curable adhesive composition (I-4), the adhesive composition (I-4) containing acrylic polymer (100 parts by mass) and a trifunctional xylylene diisocyanate-based crosslinking agent ("Takenate D110N" manufactured by Mitsui Takeda Chemical Co., Ltd.) (18 parts by mass based on the amount of the aforementioned crosslinking agent), further containing methyl ethyl ketone as a solvent, and the total concentration of the aforementioned acrylic polymer and crosslinking agent It is 55% by mass. The aforementioned acrylic polymer is a copolymer having a weight average molecular weight of 800,000, which is obtained by copolymerizing 2-ethylhexyl acrylate (80 parts by mass) and 2-hydroxyethyl acrylate (20 parts by mass).

[防污片之製造] 使用聚對苯二甲酸乙二酯製膜的單面藉由聚矽氧處理進行了剝離處理之剝離膜(琳得科公司製造的「SP-PET381031」,厚度38μm),於前述剝離膜的前述剝離處理面塗敷上述獲得之黏著劑組成物(I-4),於100℃加熱乾燥2分鐘,藉此形成厚度為10μm且為帶狀之非能量線硬化性之黏著劑層。 另行準備一面的表面粗糙度Ra小於另一面的表面粗糙度Ra、一面為凹凸面、另一面為平滑面之帶狀之聚丙烯製基材(三菱樹脂公司製造,厚度80μm)作為基材。 於上述獲得之非能量線硬化性之黏著劑層的露出面貼合前述基材的凹凸面,藉此製作基材、黏著劑層及剝離膜依序於這些層的厚度方向上積層而構成之附剝離膜之帶狀之防污片。[Manufacturing of anti-fouling sheet] Use a peeling film made of polyethylene terephthalate, one side of which has been peeled off by silicone treatment ("SP-PET381031" made by Lindeco, thickness 38μm), on the above-mentioned peeling film The peeling treatment surface was coated with the adhesive composition (I-4) obtained above, and heated and dried at 100° C. for 2 minutes, thereby forming a non-energy-ray-curable adhesive layer with a thickness of 10 μm and a belt shape. Separately, a tape-shaped polypropylene substrate (manufactured by Mitsubishi Plastics Co., Ltd., thickness 80 μm) with a surface roughness Ra on one side smaller than that on the other side, an uneven surface on one side and a smooth surface on the other side, was prepared as a substrate. The above-obtained non-energy-ray-curable adhesive layer is laminated on the exposed surface of the aforementioned substrate to form a substrate, an adhesive layer, and a release film, which are laminated in the thickness direction of these layers in order. Strip-shaped antifouling sheet with peeling film.

[保護膜形成用複合片之製造] 於上述獲得之防污片中移除剝離膜。另外,於上述獲得之積層膜中移除第2剝離膜。並且,將該防污片中新產生之黏著劑層的露出面(換言之,黏著劑層中之與基材側為相反側的面)來與上述獲得之第1剝離膜及保護膜形成用膜之積層物中之保護膜形成用膜的露出面(換言之,保護膜形成用膜中之與第1剝離膜側為相反側的面)貼合。藉此,獲得以下之附第1剝離膜之保護膜形成用複合片:係基材(厚度80μm)、黏著劑層(厚度10μm)、保護膜形成用膜(厚度15μm)及第1剝離膜(厚度50μm)依序於這些層的厚度方向上積層而構成,且這些全部層的平面形狀均為寬度皆為220mm之帶狀。 藉由以上步驟,製作具有圖1所示之構成且為目標晶圓尺寸之保護膜形成用複合片。 表1中表示構成保護膜形成用複合片之各層。層一欄記載為「-」時,表示保護膜形成用複合片不具備該層。[Manufacturing of composite sheet for protective film formation] The release film was removed from the antifouling sheet obtained above. In addition, the second release film was removed from the laminated film obtained above. And, the exposed surface of the adhesive layer newly generated in the antifouling sheet (in other words, the surface of the adhesive layer opposite to the substrate side) is compared with the first release film and protective film forming film obtained above. The exposed surface of the protective film formation film (in other words, the surface of the protective film formation film opposite to the first release film side) in the laminate. Thereby, the following composite sheet for forming a protective film with a first release film was obtained: base material (thickness 80μm), adhesive layer (thickness 10μm), protective film formation film (thickness 15μm), and first release film ( (Thickness: 50 μm) is formed by sequentially stacking these layers in the thickness direction, and the planar shape of all the layers is a belt shape with a width of 220 mm. Through the above steps, a composite sheet for forming a protective film having the configuration shown in FIG. 1 and having the target wafer size is produced. Table 1 shows each layer constituting the composite sheet for forming a protective film. When the column of layer is described as "-", it means that the composite sheet for forming a protective film does not have the layer.

[防污片、保護膜形成用膜及保護膜形成用複合片之評價] [防污片的透過清晰度之測定] 自上述獲得之帶狀之防污片移除第1剝離膜。 使用圖像清晰性測定器(Suga Test Instruments公司製造的「ICM-10P」),依據JIS K 7374:2007,將使照射光透過之狹縫的寬度設為0.125mm、0.25mm、0.5mm、1mm及2mm之5種,各情形時,針對前述防污片,取得圖像清晰性(圖像清晰度)之評價值,採用該評價值之合計值作為透過清晰度。結果示於表1。[Evaluation of antifouling sheet, protective film forming film, and protective film forming composite sheet] [Determination of the clarity of antifouling sheet] The first release film was removed from the band-shaped antifouling sheet obtained above. Using an image clarity measuring device ("ICM-10P" manufactured by Suga Test Instruments), in accordance with JIS K 7374:2007, the width of the slit through which the irradiated light is transmitted is set to 0.125mm, 0.25mm, 0.5mm, 1mm And 5 types of 2mm, in each case, for the aforementioned antifouling sheet, the evaluation value of image clarity (image clarity) is obtained, and the total value of the evaluation value is used as the transmission clarity. The results are shown in Table 1.

[防污片之15%伸長性之評價] 自上述獲得之附第1剝離膜之帶狀之防污片切出寬度為15mm之片,進而自該片移除第1剝離膜,藉此製作寬度為15mm之試片。並且,依據JIS K 7127:1999(ISO527-3:1995)、JIS K 7161:1994(ISO5271:1993),藉由下述順序評價前述試片(換言之,防污片)之15%伸長性。 亦即,進行以下之拉伸試驗:於18℃至28℃之溫度條件下,將初始的夾頭間隔設為100mm,將前述試片於相對於前述試片的表面呈平行的方向上以200mm/min之速度拉伸。此時,確認前述試片有無伸長及斷裂,依據下述基準評價試片(防污片)之15%伸長性。 於試片之MD方向及TD方向之2方向上,使用不同的試片進行該評價。結果示於表1。 [評價基準] A:試片未斷裂而於拉伸方向上伸長15%以上。 B:試片在於拉伸方向上伸長15%以上之前即斷裂。[Evaluation of 15% extensibility of anti-fouling sheet] A piece of 15 mm in width was cut out from the strip-shaped antifouling sheet with the first release film obtained above, and the first release film was removed from the piece to prepare a test piece of 15 mm in width. In addition, in accordance with JIS K 7127: 1999 (ISO527-3: 1995) and JIS K 7161: 1994 (ISO 5271: 1993), the 15% extensibility of the aforementioned test piece (in other words, the antifouling sheet) was evaluated in the following order. That is, the following tensile test is performed: under the temperature condition of 18°C to 28°C, the initial chuck spacing is set to 100mm, and the test piece is set at 200mm in a direction parallel to the surface of the test piece. Stretching at a speed of /min. At this time, confirm whether the aforementioned test piece has elongation or breakage, and evaluate the 15% extensibility of the test piece (anti-fouling sheet) based on the following criteria. In the MD direction and the TD direction of the test piece, two different test pieces were used for the evaluation. The results are shown in Table 1. [Evaluation criteria] A: The test piece is not broken but is elongated by 15% or more in the tensile direction. B: The test piece broke before it was extended by 15% or more in the tensile direction.

[防污片之10%伸長時的拉伸強度] 於上述之試片(防污片)之15%伸長性之評價時,同時測定試片(防污片)於拉伸方向上伸長10%時的拉伸強度。 於試片之MD方向及TD方向之2方向上,使用不同的試片進行該測定。結果示於表1。[Tensile strength of anti-fouling sheet at 10% elongation] During the 15% elongation evaluation of the above-mentioned test piece (anti-fouling sheet), the tensile strength of the test piece (anti-fouling sheet) at 10% extension in the tensile direction was measured at the same time. In the MD direction and the TD direction of the test piece, two different test pieces were used for the measurement. The results are shown in Table 1.

[保護膜形成用膜的雷射印字視認性之評價] 使用背面研磨膠帶用層合機(琳得科公司製造的「RAD3510」),於上述獲得之附第1剝離膜之帶狀之保護膜形成用複合片中移除第1剝離膜。並且,於保護膜形成用複合片中的保護膜形成用膜的露出面貼附直徑為200mm且厚度為350μm之半導體晶圓的內面整面。此時,於貼附壓力0.3MPa、貼附速度30mm/s之條件下,將用於貼附之工作臺的溫度設為50℃,於保護膜形成用複合片貼附半導體晶圓。另外,將保護膜形成用複合片一邊於相對於該保護膜形成用複合片中之對半導體晶圓之貼附面呈平行的方向上拉伸、一邊進行貼附。[Evaluation of the visibility of laser printing of protective film formation film] Using a laminator for back polishing tape ("RAD3510" manufactured by Lindeco), the first release film was removed from the composite sheet for forming a protective film with a first release film obtained above. In addition, on the exposed surface of the protective film formation film in the protective film formation composite sheet, the entire inner surface of the semiconductor wafer having a diameter of 200 mm and a thickness of 350 μm was attached. At this time, under the conditions of an attaching pressure of 0.3 MPa and an attaching speed of 30 mm/s, the temperature of the worktable for attaching was set to 50° C., and the semiconductor wafer was attached to the composite sheet for forming a protective film. In addition, the composite sheet for forming a protective film is attached while being stretched in a direction parallel to the attaching surface to the semiconductor wafer in the composite sheet for forming a protective film.

繼而,於前述層合機內,沿著半導體晶圓的外周切斷保護膜形成用複合片,藉此獲得具備半導體晶圓、及位於該半導體晶圓的內面之切斷後的保護膜形成用複合片之前述第2積層體。此時,保護膜形成用複合片的切斷速度設為200mm/sec。另外,使切斷後的保護膜形成用膜的中心與半導體晶圓的中心一致,於第2積層體中使各層成為同心。此處所獲得之第2積層體中的保護膜形成用複合片係基材(厚度80μm)、黏著劑層(厚度10μm)及保護膜形成用膜(厚度15μm)依序於這些層的厚度方向上積層而構成,且具有這些全部層的平面形狀成為直徑200mm之圓形之構成。Then, in the laminator described above, the protective film forming composite sheet is cut along the outer periphery of the semiconductor wafer to obtain a protective film formed with a semiconductor wafer and a cut located on the inner surface of the semiconductor wafer. The aforementioned second laminate of the composite sheet. At this time, the cutting speed of the composite sheet for forming a protective film was 200 mm/sec. In addition, the center of the protective film forming film after the cut was aligned with the center of the semiconductor wafer, and the layers were concentric in the second laminate. The composite sheet-based substrate (thickness 80μm), the adhesive layer (thickness 10μm) and the protective film formation film (thickness 15μm) in the second laminate obtained here are in the thickness direction of these layers in this order It is constructed by layering, and the planar shape of all these layers becomes a circular structure with a diameter of 200 mm.

自保護膜形成用複合片的一端側朝向另一端側,於前述層合機內反復進行合計20次之以下之步驟以製作20片的第2積層體:於上述之保護膜形成用複合片中的保護膜形成用膜的露出面貼附半導體晶圓的內面整面,沿著半導體晶圓的外周切斷保護膜形成用複合片。From one end of the protective film forming composite sheet to the other end, the following steps were repeated in the aforementioned laminator 20 times in total to produce 20 second laminates: in the above-mentioned protective film forming composite sheet The exposed surface of the protective film formation film is attached to the entire inner surface of the semiconductor wafer, and the protective film formation composite sheet is cut along the outer periphery of the semiconductor wafer.

繼而,於雷射印字裝置(EO Technics公司製造的「CSM3000」)的內部設置上述獲得之20片的第2積層體中的1片。該雷射印字裝置與晶圓尺寸之印字對象物之操作對應,但未與環狀框尺寸之印字對象物之操作對應。並且,對第2積層體中的保護膜形成用膜隔著防污片(亦即,基材及黏著劑層之積層物)照射雷射光,藉此對保護膜形成用膜的防污片側的面(亦即,第2面)進行雷射印字。此時,所印字之文字的大小為0.3mm×0.2mm。 並且,隔著防污片目視觀察文字,依據下述基準,評價保護膜形成用膜的雷射印字視認性。結果示於表1。 [評價基準] A:文字能夠明確地視認。 B:文字略微模糊但能夠視認。 C:文字無法視認。Then, one of the 20 second laminates obtained as described above was installed inside a laser printing device ("CSM3000" manufactured by EO Technics). This laser printing device corresponds to the operation of the printing object of the wafer size, but does not correspond to the operation of the printing object of the ring frame size. In addition, the protective film forming film in the second laminate is irradiated with laser light via the antifouling sheet (that is, the laminate of the base material and the adhesive layer), thereby irradiating the protective film forming film on the antifouling sheet side Laser printing is performed on the surface (that is, the second surface). At this time, the size of the printed characters is 0.3mm×0.2mm. In addition, the characters were visually observed through the antifouling sheet, and the laser printing visibility of the protective film formation film was evaluated based on the following criteria. The results are shown in Table 1. [Evaluation criteria] A: The text can be clearly recognized. B: The text is slightly blurred but visible. C: The text cannot be read.

[保護膜形成用膜的防污性之評價] 於上述之保護膜形成用膜的雷射印字視認性之評價後,繼而於雷射印字後的第2積層體中,自保護膜形成用膜剝離防污片。並且,直接目視觀察保護膜形成用膜的露出面,依據下述基準,評價保護膜形成用膜的防污性。結果示於表1。 [評價基準] A:異物未附著。 B:異物附著。[Evaluation of antifouling property of protective film formation film] After the above-mentioned evaluation of the visibility of the laser printing of the protective film forming film, the antifouling sheet was peeled off from the protective film forming film in the second laminate after the laser printing. In addition, the exposed surface of the protective film formation film was directly observed visually, and the antifouling properties of the protective film formation film were evaluated based on the following criteria. The results are shown in Table 1. [Evaluation criteria] A: No foreign matter adhered. B: Foreign matter adhered.

[保護膜形成用複合片的切斷適性之評價] 於上述之保護膜形成用膜的雷射印字視認性之評價時所獲得之20片的第2積層體中,針對每1片目視觀察保護膜形成用複合片的切斷面,藉此確認前述切斷面中有無毛邊,依據下述基準,評價保護膜形成用複合片的切斷適性。結果示於表1。表1中,於前述切斷面存在毛邊之前述積層體的片數亦表示為「存在毛邊之片數」。 [評價基準] A:存在毛邊之積層體的片數為0。 B:存在毛邊之積層體的片數為1至4。 C:存在毛邊之積層體的片數為5以上。[Evaluation of the cutting suitability of the composite sheet for forming a protective film] Among the 20 second laminates obtained during the evaluation of the visibility of the laser printing of the protective film formation film described above, the cut surface of the protective film formation composite sheet was visually observed for each one to confirm the foregoing Whether there are burrs on the cut surface, the cutting suitability of the composite sheet for forming a protective film was evaluated based on the following criteria. The results are shown in Table 1. In Table 1, the number of sheets of the laminate with burrs on the cut surface is also expressed as "the number of sheets with burrs". [Evaluation criteria] A: The number of laminates with burrs is zero. B: The number of laminates with burrs is 1 to 4. C: The number of laminates with burrs is 5 or more.

[保護膜形成用複合片之切斷時的切刀的刃的磨耗抑制性之評價] 於上述之保護膜形成用膜的雷射印字視認性之評價時,切斷保護膜形成用複合片,藉此獲得第2積層體20片後,使用基恩士公司製造的光學顯微鏡,觀察該切斷時所使用之裝置內的切刀的刃。並且,依據下述基準,評價保護膜形成用複合片之切斷時的切刀的刃的磨耗抑制性。結果示於表1。 A:切刀的刃未磨耗。 B:切刀的刃略微磨耗,但可直接繼續使用。 C:切刀的刃較B之情形進一步磨耗,但可直接繼續使用。 D:切刀的刃顯著磨耗,不能直接繼續使用。[Evaluation of the abrasion inhibition of the blade of the cutter when cutting the composite sheet for forming a protective film] In the evaluation of the visibility of laser printing of the protective film forming film described above, the composite sheet for forming the protective film was cut to obtain 20 second laminates, and then the optical microscope manufactured by Keyence Corporation was used to observe the composite sheet. The blade of the cutter in the device used for cutting. In addition, the abrasion-suppressive properties of the blade of the cutter at the time of cutting the composite sheet for forming a protective film were evaluated based on the following criteria. The results are shown in Table 1. A: The blade of the cutter is not worn. B: The blade of the cutter is slightly worn, but it can be used directly. C: The blade of the cutter is more worn than in the case of B, but it can be used directly. D: The blade of the cutter is significantly worn and cannot be used directly.

[保護膜形成用複合片之製造、以及防污片、保護膜形成用膜及保護膜形成用複合片之評價] [實施例2] 於黏著劑組成物(I-4)之製造時,將3官能苯二甲基二異氰酸酯系交聯劑的含量以前述交聯劑的量計設為8質量份代替18質量份,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表1。[Manufacture of a composite sheet for forming a protective film, and evaluation of an antifouling sheet, a film for forming a protective film, and a composite sheet for forming a protective film] [Example 2] In the production of the adhesive composition (I-4), the content of the trifunctional xylylene diisocyanate-based crosslinking agent is set to 8 parts by mass instead of 18 parts by mass based on the amount of the aforementioned crosslinking agent. Otherwise, a composite sheet for forming a protective film was produced by the same method as in Example 1, and the antifouling sheet, the film for forming a protective film, and the composite sheet for forming a protective film were evaluated. The results are shown in Table 1.

[實施例3] [保護膜形成用複合片之製造] [黏著性樹脂(I-2a)之製造] 製備使丙烯酸2-乙基己酯(以下,簡稱為「2EHA」)(80質量份)、及丙烯酸2-羥基乙酯(以下,簡稱為「HEA」)(20質量份)共聚而成之重量平均分子量為800000之丙烯酸聚合物。 於該丙烯酸聚合物中添加異氰酸2-甲基丙烯醯氧基乙酯(22質量份,相對於HEA為約80莫耳%),於空氣氣流中於50℃進行48小時加成反應,藉此獲得黏著性樹脂(I-2a)。[Example 3] [Manufacturing of composite sheet for protective film formation] [Manufacturing of Adhesive Resin (I-2a)] The weight is prepared by copolymerizing 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") (80 parts by mass) and 2-hydroxyethyl acrylate (hereinafter referred to as "HEA") (20 parts by mass) An acrylic polymer with an average molecular weight of 800,000. Add 2-methacryloxyethyl isocyanate (22 parts by mass, about 80 mol% relative to HEA) to the acrylic polymer, and perform an addition reaction at 50°C for 48 hours in an air stream. Thus, the adhesive resin (I-2a) is obtained.

[黏著劑組成物(I-2)之製造] 製備能量線硬化性之黏著劑組成物(I-2),該黏著劑組成物(I-2)含有上述獲得之黏著性樹脂(I-2a)(100質量份)、及3官能苯二甲基二異氰酸酯系交聯劑(三井武田化學公司製造的「Takenate D110N」)(以前述交聯劑的量計為5質量份),進而含有作為溶媒之甲基乙基酮,且前述黏著性樹脂(I-2a)及交聯劑之合計濃度為55質量%。[Manufacturing of Adhesive Composition (I-2)] An energy-ray curable adhesive composition (I-2) is prepared, the adhesive composition (I-2) contains the adhesive resin (I-2a) (100 parts by mass) obtained above, and a trifunctional xylylene -Based diisocyanate-based crosslinking agent ("Takenate D110N" manufactured by Mitsui Takeda Chemical Co., Ltd.) (5 parts by mass based on the amount of the crosslinking agent), further containing methyl ethyl ketone as a solvent, and the aforementioned adhesive resin The total concentration of (I-2a) and the crosslinking agent is 55% by mass.

[防污片之製造] 使用與實施例1中所使用之剝離膜相同的剝離膜(琳得科公司製造的「SP-PET381031」,厚度38μm),於前述剝離膜的剝離處理面塗敷上述獲得之黏著劑組成物(I-2),於100℃加熱乾燥2分鐘,藉此形成厚度為10μm且為帶狀之能量線硬化性之黏著劑層。 另行準備與實施例1中所使用之基材相同的帶狀之聚丙烯製基材(三菱樹脂公司製造,厚度80μm)。 於上述獲得之能量線硬化性之黏著劑層的露出面貼合前述基材的凹凸面,藉此製作基材、黏著劑層及剝離膜依序於這些層的厚度方向上積層而構成之附剝離膜之帶狀之防污片。[Manufacturing of anti-fouling sheet] Using the same release film as the release film used in Example 1 ("SP-PET381031" manufactured by Lindeco, thickness 38μm), the adhesive composition obtained above was applied to the release treatment surface of the release film ( I-2) Heat and dry at 100°C for 2 minutes to form a band-shaped energy-ray-curable adhesive layer with a thickness of 10 μm. Separately, a tape-shaped polypropylene substrate (manufactured by Mitsubishi Plastics Co., Ltd., thickness 80 μm) as the substrate used in Example 1 was prepared. The above-mentioned exposed surface of the energy-ray-curable adhesive layer is bonded to the uneven surface of the aforementioned substrate, thereby producing a substrate, an adhesive layer, and a release film that are laminated in the thickness direction of these layers in order to form an attachment. Strip-shaped anti-fouling sheet for peeling film.

[保護膜形成用複合片之製造] 除了使用上述獲得之防污片之方面以外,利用與實施例1之情形相同的方法,製作帶狀之保護膜形成用複合片及第2積層體。[Manufacturing of composite sheet for protective film formation] Except for the use of the antifouling sheet obtained above, the same method as in the case of Example 1 was used to produce a belt-shaped composite sheet for forming a protective film and a second laminate.

[防污片、保護膜形成用膜及保護膜形成用複合片之評價] 針對上述獲得之防污片、保護膜形成用膜及保護膜形成用複合片,利用與實施例1之情形相同的方法進行評價。結果示於表1。[Evaluation of antifouling sheet, protective film forming film, and protective film forming composite sheet] The antifouling sheet, protective film forming film, and protective film forming composite sheet obtained above were evaluated in the same manner as in the case of Example 1. The results are shown in Table 1.

[保護膜形成用複合片之製造、以及防污片、保護膜形成用膜及保護膜形成用複合片之評價] [實施例4] 於防污片之製造時,使用雙面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東洋紡公司製造,厚度100μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表1。[Manufacture of a composite sheet for forming a protective film, and evaluation of an antifouling sheet, a film for forming a protective film, and a composite sheet for forming a protective film] [Example 4] In the production of the antifouling sheet, a tape-shaped polyethylene terephthalate substrate (manufactured by Toyobo Co., Ltd., thickness 100μm) with smooth surfaces on both sides is used instead of the tape-shaped polypropylene substrate (Mitsubishi Resin Made by the company, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy-ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture protective film formation Composite sheet, evaluation of antifouling sheet, protective film formation film, and protective film formation composite sheet. The results are shown in Table 1.

[實施例5] 於防污片之製造時,使用雙面為凹凸面之帶狀之聚丙烯製基材(GUNZE公司製造,厚度80μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一凹凸面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表1。[Example 5] In the production of the antifouling sheet, a tape-shaped polypropylene substrate (manufactured by Gunze Corporation, thickness 80μm) with concave and convex surfaces on both sides is used instead of the aforementioned tape-shaped polypropylene substrate (manufactured by Mitsubishi Plastics Corporation, thickness 80μm) , Attach one of the uneven surfaces to the exposed surface of the non-energy-ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to produce a composite sheet for forming a protective film, and the antifouling was evaluated Sheet, protective film forming film, and protective film forming composite sheet. The results are shown in Table 1.

[實施例6] 於防污片之製造時,使用一面為凹凸面且另一面為平滑面之帶狀之聚丙烯製基材(RIKEN TECHNOS公司製造,厚度60μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將該基材的凹凸面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表1。[Example 6] In the production of the antifouling sheet, a tape-shaped polypropylene substrate (manufactured by RIKEN TECHNOS, thickness 60μm) with an uneven surface on one side and a smooth surface on the other side is used instead of the tape-shaped polypropylene substrate (Mitsubishi Resin Made by the company, thickness 80μm), the uneven surface of the substrate is attached to the exposed surface of the non-energy-ray-curable adhesive layer, except for this point, the protective film is manufactured by the same method as in Example 1 The composite sheet for formation was evaluated for the antifouling sheet, the film for forming a protective film, and the composite sheet for forming the protective film. The results are shown in Table 1.

[實施例7] 於防污片之製造時,將基材的平滑面而非凹凸面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表1。[Example 7] During the production of the antifouling sheet, the smooth surface of the base material was attached to the exposed surface of the non-energy ray-curable adhesive layer instead of the uneven surface. Except for this point, the same as in Example 1 was used. Methods: A composite sheet for forming a protective film was manufactured, and the antifouling sheet, a film for forming a protective film, and a composite sheet for forming a protective film were evaluated. The results are shown in Table 1.

[實施例8] 於防污片之製造時,使用兩面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東洋紡公司製造,厚度38μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表1。[Example 8] In the production of the antifouling sheet, a tape-shaped polyethylene terephthalate substrate (manufactured by Toyobo Co., Ltd., thickness 38μm) with smooth surfaces on both sides is used instead of the tape-shaped polypropylene substrate (Mitsubishi Plastics Corporation) Manufacturing, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture a protective film forming composite Sheets were evaluated for antifouling sheets, protective film formation films, and protective film formation composite sheets. The results are shown in Table 1.

[實施例9] 於防污片之製造時,使用兩面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東洋紡公司製造,厚度25μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表1。[Example 9] In the production of the antifouling sheet, a tape-shaped polyethylene terephthalate substrate (manufactured by Toyobo Co., Ltd., thickness 25μm) with smooth surfaces on both sides is used instead of the tape-shaped polypropylene substrate (Mitsubishi Plastics Corporation) Manufacturing, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture a protective film forming composite Sheets were evaluated for antifouling sheets, protective film formation films, and protective film formation composite sheets. The results are shown in Table 1.

[實施例10] 於防污片之製造時,使用兩面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東麗公司製造,厚度16μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表2。[Example 10] In the production of the antifouling sheet, a tape-shaped polyethylene terephthalate substrate (manufactured by Toray Corporation, thickness 16μm) with smooth surfaces on both sides is used instead of the tape-shaped polypropylene substrate (Mitsubishi Resin Made by the company, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy-ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture protective film formation Composite sheet, evaluation of antifouling sheet, protective film formation film, and protective film formation composite sheet. The results are shown in Table 2.

[實施例11] 於防污片之製造時,使用兩面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東麗公司製造,厚度12μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表2。[Example 11] In the production of the antifouling sheet, a tape-shaped polyethylene terephthalate substrate (made by Toray Corporation, thickness 12μm) with smooth surfaces on both sides is used instead of the tape-shaped polypropylene substrate (Mitsubishi Resin Made by the company, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy-ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture protective film formation Composite sheet, evaluation of antifouling sheet, protective film formation film, and protective film formation composite sheet. The results are shown in Table 2.

[實施例12] 於防污片之製造時,使用兩面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東麗公司製造,厚度125μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表2。[Example 12] In the production of the antifouling sheet, a tape-shaped polyethylene terephthalate substrate (made by Toray Corporation, thickness 125μm) with smooth surfaces on both sides is used instead of the tape-shaped polypropylene substrate (Mitsubishi Resin Made by the company, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy-ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture protective film formation Composite sheet, evaluation of antifouling sheet, protective film formation film, and protective film formation composite sheet. The results are shown in Table 2.

[實施例13] 於防污片之製造時,使用兩面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東麗公司製造,厚度188μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表2。[Example 13] In the production of the antifouling sheet, a strip-shaped polyethylene terephthalate substrate (manufactured by Toray Corporation, thickness 188μm) with smooth surfaces on both sides is used instead of the aforementioned strip-shaped polypropylene substrate (Mitsubishi Resin Made by the company, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy-ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture protective film formation Composite sheet, evaluation of antifouling sheet, protective film formation film, and protective film formation composite sheet. The results are shown in Table 2.

[實施例14] 於防污片之製造時,使用兩面為平滑面之帶狀之聚對苯二甲酸乙二酯製基材(東洋紡公司製造,厚度250μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將其中一平滑面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表2。[Example 14] In the production of the antifouling sheet, a strip-shaped polyethylene terephthalate substrate (manufactured by Toyobo Co., Ltd., thickness 250μm) with smooth surfaces on both sides is used instead of the aforementioned tape-shaped polypropylene substrate (Mitsubishi Plastics Co., Ltd.) Manufacturing, thickness 80μm), one of the smooth surfaces was attached to the exposed surface of the non-energy ray-curable adhesive layer. Except for this point, the same method as in Example 1 was used to manufacture a protective film forming composite Sheets were evaluated for antifouling sheets, protective film formation films, and protective film formation composite sheets. The results are shown in Table 2.

[比較例1] [保護膜形成用膜之製造] 利用與實施例1之情形相同的方法,製造第1剝離膜、保護膜形成用膜及第2剝離膜依序於這些層的厚度方向上積層而構成之帶狀之積層膜。[Comparative Example 1] [Manufacturing of protective film forming film] By the same method as in the case of Example 1, a strip-shaped laminated film formed by sequentially laminating these layers in the thickness direction of the first release film, the protective film forming film, and the second release film was produced.

[保護膜形成用膜之評價] [保護膜形成用膜的雷射印字視認性之評價] 於上述獲得之積層膜中移除第2剝離膜,獲得第1剝離膜及保護膜形成用膜之積層物。 繼而,利用與上述之實施例1中移除了第1剝離膜之保護膜形成用複合片之情形相同的方法,將前述積層物貼附於直徑為200mm且厚度為350μm之半導體晶圓的內面整面。進而,自保護膜形成用膜移除第1剝離膜。 繼而,於雷射印字裝置(EO Technics公司製造的「CSM3000」)的內部設置該保護膜形成用膜與半導體晶圓之積層物,對貼附於該半導體晶圓之保護膜形成用膜直接照射雷射光,藉此對保護膜形成用膜中之與半導體晶圓側為相反側的面(亦即,露出面)進行雷射印字。此時,所印字之文字的大小為0.3mm×0.2mm。 並且,直接目視觀察文字,利用與實施例1之情形相同的方法,評價保護膜形成用膜之雷射印字視認性。結果示於表2。[Evaluation of protective film formation film] [Evaluation of the visibility of laser printing of protective film formation film] The second release film is removed from the laminated film obtained above to obtain a laminate of the first release film and the protective film forming film. Then, using the same method as in the case of the composite sheet for forming a protective film with the first release film removed in the above-mentioned Example 1, the aforementioned laminate was attached to the inside of a semiconductor wafer with a diameter of 200 mm and a thickness of 350 μm. Whole face. Furthermore, the 1st peeling film was removed from the film for protective film formation. Then, a laminate of the protective film formation film and the semiconductor wafer is placed inside the laser printing device ("CSM3000" manufactured by EO Technics), and the protective film formation film attached to the semiconductor wafer is directly irradiated The laser light is used to perform laser printing on the surface (that is, the exposed surface) of the protective film forming film opposite to the semiconductor wafer side. At this time, the size of the printed characters is 0.3mm×0.2mm. In addition, the characters were directly visually observed, and the laser printing visibility of the protective film formation film was evaluated by the same method as in the case of Example 1. The results are shown in Table 2.

[保護膜形成用膜的防污性之評價] 於上述之保護膜形成用膜的雷射印字視認性之評價時,同時直接目視觀察雷射印字後的保護膜形成用膜的露出面,利用與實施例1之情形相同的方法,評價保護膜形成用膜之防污性。結果示於表2。[Evaluation of antifouling property of protective film formation film] In the evaluation of the visibility of the laser printing of the protective film formation film described above, the exposed surface of the protective film formation film after laser printing was directly observed at the same time, and the protective film was evaluated by the same method as in the case of Example 1. The antifouling properties of the forming film. The results are shown in Table 2.

[比較例2] 於防污片之製造時,使用一面為凹凸面且另一面為平滑面之帶狀之聚丙烯製基材(RIKEN TECHNOS公司製造,厚度50μm)代替帶狀之前述聚丙烯製基材(三菱樹脂公司製造,厚度80μm),將該基材的凹凸面貼合於上述之非能量線硬化性之黏著劑層的露出面,除此方面以外,利用與實施例1之情形相同的方法製造保護膜形成用複合片,評價防污片、保護膜形成用膜及保護膜形成用複合片。結果示於表2。[Comparative Example 2] In the production of the antifouling sheet, a tape-shaped polypropylene substrate (manufactured by RIKEN TECHNOS, thickness 50μm) with an uneven surface on one side and a smooth surface on the other side is used instead of the tape-shaped polypropylene substrate (Mitsubishi Resin Made by the company, thickness 80μm), the uneven surface of the substrate is attached to the exposed surface of the non-energy-ray-curable adhesive layer, except for this point, the protective film is manufactured by the same method as in Example 1 The composite sheet for formation was evaluated for the antifouling sheet, the film for forming a protective film, and the composite sheet for forming the protective film. The results are shown in Table 2.

[表1]   實施例 1 2 3 4 5 6 7 8 9 保護膜形成用複合片的構成 保護膜形成用膜 硬化性 熱硬化性 厚度 (μm) 15 防污片 黏著劑層 硬化性 非能量線硬化性 能量線硬化性 非能量線硬化性 厚度 (μm) 10 於基材的形成面 凹凸面 平滑面 凹凸面 平滑面 基材 主材料 PP PET PP PET 厚度 (μm) 80 100 80 60 80 38 25 寬度的最大值(mm) 220 相對於半導體晶圓之尺寸比(%) 110 評價結果 防污片的透過清晰度 420 430 450 440 155 210 40 450 450 防污片之15%伸長性 MD方向 A A A A A A A A A TD方向 A A A A A A A A A 防污片之10%伸長時的拉伸強度(N/15mm) MD方向 13 13 13 170 18 5.9 13 64 40 TD方向 11 11 11 180 17 5.6 11 65 45 保護膜形成用膜的雷射印字視認性 A A A A B A C A A 保護膜形成用膜的防污性 A A A A A A A A A 保護膜形成用複合片的切斷適性 (存在毛邊之片數) A (0) A (0) A (0) A (0) A (0) B (2) A (0) A (0) A (0) 切刀的刃的磨耗抑制性 A A A A A A A A A [Table 1] Example 1 2 3 4 5 6 7 8 9 Composition of composite sheet for forming protective film Film for forming protective film Hardening Thermosetting Thickness (μm) 15 Antifouling film Adhesive layer Hardening Non-energy ray hardening Energy ray hardening Non-energy ray hardening Thickness (μm) 10 On the forming surface of the substrate Concave and convex surface Smooth surface Concave and convex surface Smooth surface Substrate Main material PP PET PP PET Thickness (μm) 80 100 80 60 80 38 25 Maximum width (mm) 220 Relative to semiconductor wafer size ratio (%) 110 Evaluation results Clearness of antifouling sheet 420 430 450 440 155 210 40 450 450 15% elongation of anti-fouling sheet MD direction A A A A A A A A A TD direction A A A A A A A A A Tensile strength of anti-fouling sheet at 10% elongation (N/15mm) MD direction 13 13 13 170 18 5.9 13 64 40 TD direction 11 11 11 180 17 5.6 11 65 45 Visibility of laser printing of protective film formation film A A A A B A C A A Antifouling properties of the protective film formation film A A A A A A A A A Cutting suitability of composite sheet for forming protective film (number of sheets with burrs) A (0) A (0) A (0) A (0) A (0) B (2) A (0) A (0) A (0) Abrasion suppression of the blade of the cutter A A A A A A A A A

[表2]   實施例 比較例 10 11 12 13 14 1 2 保護膜形成用複合片的構成 保護膜形成用膜 硬化性 熱硬化性 厚度 (μm) 15 防污片 黏著劑層 硬化性 非能量線硬化性 - 非能量線 硬化性 厚度(μm) 10 - 10 於基材的形成面 平滑面 - 凹凸面 基材 主材料 PET - PP 厚度(μm) 16 12 125 188 250 - 50 寬度的最大值(mm) 220 - 220 相對於半導體晶圓之尺寸比(%) 110 - 110 評價 結果 防污片的透過清晰度 460 460 440 440 430 - 210 防污片之15%伸長性 MD方向 A A A A A - A TD方向 A A A A A - A 防污片之10%伸長時的拉伸強度(N/15mm) MD方向 26 21 212 315 426 - 3.9 TD方向 27 22 223 340 450 - 3.8 保護膜形成用膜的雷射印字視認性 A A A A A A A 保護膜形成用膜的防污性 A A A A A B A 保護膜形成用複合片的切斷適性 (存在毛邊之片數) A (0) A (0) A (0) A (0) A (0) - C (7) 切刀的刃的磨耗抑制性 A A B C D - A [Table 2] Example Comparative example 10 11 12 13 14 1 2 Composition of composite sheet for forming protective film Film for forming protective film Hardening Thermosetting Thickness (μm) 15 Antifouling film Adhesive layer Hardening Non-energy ray hardening - Non-energy ray hardening Thickness (μm) 10 - 10 On the forming surface of the substrate Smooth surface - Concave and convex surface Substrate Main material PET - PP Thickness (μm) 16 12 125 188 250 - 50 Maximum width (mm) 220 - 220 Relative to semiconductor wafer size ratio (%) 110 - 110 Evaluation results Clearness of antifouling sheet 460 460 440 440 430 - 210 15% elongation of anti-fouling sheet MD direction A A A A A - A TD direction A A A A A - A Tensile strength of anti-fouling sheet at 10% elongation (N/15mm) MD direction 26 twenty one 212 315 426 - 3.9 TD direction 27 twenty two 223 340 450 - 3.8 Visibility of laser printing of protective film formation film A A A A A A A Antifouling properties of the protective film formation film A A A A A B A Cutting suitability of composite sheet for forming protective film (number of sheets with burrs) A (0) A (0) A (0) A (0) A (0) - C (7) Abrasion suppression of the blade of the cutter A A B C D - A

由上述結果可明顯看出,於實施例1至實施例14中,藉由使用防污片,於對保護膜形成用膜進行雷射印字時,能夠抑制不預期的異物附著於保護膜形成用膜。此時,帶狀之保護膜形成用複合片能夠無問題地設置於前述層合機的內部。另外,前述第2積層體能夠無問題地設置於雷射印字裝置的內部。It is obvious from the above results that in Examples 1 to 14, by using the antifouling sheet, when laser printing is performed on the protective film forming film, it is possible to prevent unexpected foreign matter from adhering to the protective film forming film. membrane. At this time, the strip-shaped composite sheet for forming a protective film can be installed inside the laminator without any problem. In addition, the aforementioned second laminate can be installed in the laser printing device without any problems.

此處對保護膜形成用膜之進行雷射印字時的防污性進行了評價,但於對貼附有保護膜形成用複合片之半導體晶圓進行雷射印字以外的操作(例如搬送等)時,不變的是保護膜形成用膜亦由防污片所被覆著。因此,顯然於雷射印字以外的操作時,亦與上述之進行雷射印字時同樣地,發揮保護膜形成用膜的防污性。Here, the antifouling performance of the protective film formation film during laser printing was evaluated, but the semiconductor wafer with the protective film formation composite sheet attached to the semiconductor wafer was subjected to operations other than laser printing (for example, transport, etc.) At the same time, the same thing is that the protective film forming film is also covered by the antifouling sheet. Therefore, it is obvious that in operations other than laser printing, the antifouling property of the protective film forming film is exhibited in the same manner as the above-mentioned laser printing.

進而,於實施例1至實施例14中,於將保護膜形成用複合片一邊拉伸一邊貼附於半導體晶圓時,防污片不會被切斷,亦不會產生褶皺,保護膜形成用複合片的貼附適性良好。並且,於保護膜形成用複合片的切斷面無毛邊、或毛邊之產生機率低,毛邊之產生得到明顯抑制,保護膜形成用複合片的切斷適性良好。如此,於實施例1至實施例14中的保護膜形成用複合片由於貼附適性及切斷適性良好,故而能夠根據作為該保護膜形成用複合片之貼附對象之半導體晶圓的大小,藉由切斷來良好地調節自身的大小,具有適於保護膜形成用膜之防污目的之特性。Furthermore, in Examples 1 to 14, when the composite sheet for forming a protective film was stretched and attached to the semiconductor wafer, the antifouling sheet was not cut or wrinkled, and the protective film was formed The adhesiveness of the composite sheet is good. In addition, there is no burr on the cut surface of the protective film forming composite sheet, or the probability of burr generation is low, the generation of burrs is significantly suppressed, and the cutting suitability of the protective film forming composite sheet is good. In this way, since the composite sheet for forming a protective film in Examples 1 to 14 has good adhesion and cutting adaptability, it can be adjusted according to the size of the semiconductor wafer to be attached to the composite sheet for forming the protective film. The size of itself can be adjusted well by cutting, and it has characteristics suitable for the purpose of antifouling of the film for forming a protective film.

於實施例1至實施例14中,試片(防污片)之15%伸長性在MD方向及TD方向之任一方向均良好,試片(防污片)於拉伸試驗中不斷裂,且在該試片(防污片)之拉伸方向上伸長15%以上。In Examples 1 to 14, the 15% extensibility of the test piece (anti-fouling sheet) was good in either the MD direction and the TD direction, and the test piece (anti-fouling sheet) did not break in the tensile test. And extend 15% or more in the tensile direction of the test piece (anti-fouling sheet).

另外,於實施例1至實施例14中,試片(防污片)之10%伸長時的拉伸強度在MD方向上為5.9N/15mm以上(5.9N/15mm至426N/15mm),在TD方向上為5.6N/15mm以上(5.6N/15mm至450N/15mm),在任一方向上拉伸強度均高。其中,於實施例1至實施例5及實施例7中,前述拉伸強度在MD方向上為13N/15mm以上(13N/15mm至426N/15mm),在TD方向上為11N/15mm以上(11N/15mm至450N/15mm),在任一方向上拉伸強度均顯著高。In addition, in Examples 1 to 14, the tensile strength of the test piece (anti-fouling sheet) at 10% elongation in the MD direction is 5.9N/15mm or more (5.9N/15mm to 426N/15mm). The TD direction is 5.6N/15mm or more (5.6N/15mm to 450N/15mm), and the tensile strength is high in any direction. Among them, in Example 1 to Example 5 and Example 7, the aforementioned tensile strength is 13N/15mm or more in the MD direction (13N/15mm to 426N/15mm), and 11N/15mm or more in the TD direction (11N /15mm to 450N/15mm), the tensile strength is significantly high in either direction.

如此,於實施例1至實施例14中,試片(防污片)之15%伸長性良好,且試片(防污片)之10%伸長時的拉伸強度高,由此推測如上所述保護膜形成用複合片的特性良好。In this way, in Examples 1 to 14, the 15% elongation of the test piece (anti-fouling sheet) is good, and the tensile strength at 10% elongation of the test piece (anti-fouling sheet) is high. The characteristics of the composite sheet for forming a protective film are good.

此外,於實施例1至實施例14中,防污片的透過清晰度為40以上(40至460)。其中,於實施例1至實施例6、實施例8至實施例14中,防污片的透過清晰度高達155以上(155至460),結果於這些實施例中,保護膜形成用複合片中的保護膜形成用膜的雷射印字視認性優異。實施例7的保護膜形成用複合片能夠充分地用於對保護膜形成用膜或保護膜未進行雷射印字之用途。In addition, in Examples 1 to 14, the antifouling sheet had a transparency of 40 or more (40 to 460). Among them, in Example 1 to Example 6, Example 8 to Example 14, the antifouling sheet has a high transparency of 155 or more (155 to 460). As a result, in these examples, the protective film forming composite sheet The film for forming a protective film is excellent in laser printing visibility. The composite sheet for forming a protective film of Example 7 can be sufficiently used for applications where laser printing is not performed on the film for forming a protective film or the protective film.

另一方面,於實施例1至實施例13中,試片(防污片)之10%伸長時的拉伸強度在MD方向上為315N/15mm以下(5.9N/15mm至315N/15mm),在TD方向上為340N/15mm以下(5.6N/15mm至340N/15mm)。於實施例1至實施例13中,如此在MD方向及TD方向之任一方向上拉伸強度均處於特定的範圍內,藉此於保護膜形成用複合片之切斷時,該切斷所使用之切刀的刃的磨耗得到抑制,磨耗抑制性良好。尤其是,於實施例1至實施例11中,試片(防污片)之10%伸長時的拉伸強度在MD方向上為170N/15mm以下(5.9N/15mm至170N/15mm),在TD方向上為180N/15mm以下(5.6N/15mm至180N/15mm),在MD方向及TD方向之任一方向上,拉伸強度均進而處於特定的範圍內,藉此於保護膜形成用複合片之切斷時,該切斷所使用之切刀的刃的磨耗得到顯著抑制,磨耗抑制性尤其優異。 如此,實施例1至實施例13的保護膜形成用複合片具有更優異的特性。On the other hand, in Examples 1 to 13, the tensile strength of the test piece (anti-fouling sheet) at 10% elongation in the MD direction is 315N/15mm or less (5.9N/15mm to 315N/15mm), In the TD direction, it is 340N/15mm or less (5.6N/15mm to 340N/15mm). In Example 1 to Example 13, the tensile strength in either the MD direction and the TD direction is within a specific range, so that when the protective film forming composite sheet is cut, the cutting is used The abrasion of the blade of the cutter is suppressed, and the abrasion suppression is good. In particular, in Examples 1 to 11, the tensile strength of the test piece (anti-fouling sheet) at 10% elongation in the MD direction is 170N/15mm or less (5.9N/15mm to 170N/15mm), The TD direction is 180N/15mm or less (5.6N/15mm to 180N/15mm), and the tensile strength in either direction of the MD direction and the TD direction is further within a specific range, thereby forming a composite sheet for protective film At the time of cutting, the abrasion of the blade of the cutter used in the cutting is significantly suppressed, and the abrasion suppression is particularly excellent. In this way, the composite sheets for forming a protective film of Examples 1 to 13 have more excellent characteristics.

相對於此,於實施例14中,試片(防污片)之10%伸長時的拉伸強度在MD方向及TD方向之任一方向上均大於其他實施例之情形。因此,於實施例14中,於保護膜形成用複合片之切斷時,該切斷所使用之切刀的刃的磨耗顯著。但是,此時的保護膜形成用複合片的切斷本身能夠無問題地進行,藉由更換切刀的刃,保護膜形成用複合片能夠繼續被切斷。In contrast, in Example 14, the tensile strength of the test piece (anti-fouling sheet) at 10% elongation was greater in either the MD direction and the TD direction than in the other examples. Therefore, in Example 14, when the composite sheet for forming a protective film was cut, the blade of the cutter used for the cut was significantly worn. However, the cutting itself of the composite sheet for forming a protective film at this time can be performed without any problem, and the composite sheet for forming a protective film can be continuously cut by replacing the blade of the cutter.

相對於此,於比較例1中未使用防污片,因此於對保護膜形成用膜進行雷射印字時,無法抑制不預期的異物附著於保護膜形成用膜。 如此,於未使用防污片之情形時,對具備保護膜形成用膜之半導體晶圓進行雷射印字以外的操作(例如搬送等)時,不變的是保護膜形成用膜未由防污片被覆而露出。因此,顯然於雷射印字以外的操作時,亦與上述之進行雷射印字時同樣地,未發揮保護膜形成用膜的防污性。On the other hand, in Comparative Example 1, the antifouling sheet was not used. Therefore, when laser printing was performed on the protective film forming film, it was not possible to prevent unexpected foreign matter from adhering to the protective film forming film. In this way, when the anti-fouling sheet is not used, when performing operations other than laser printing (for example, transport, etc.) on the semiconductor wafer with the protective film forming film, the same thing is that the protective film forming film is not covered by the anti-fouling The film is covered and exposed. Therefore, it is obvious that in operations other than laser printing, the antifouling property of the protective film forming film is not exerted in the same manner as the above-mentioned laser printing.

於比較例2中,藉由使用防污片,於對保護膜形成用膜進行雷射印字時,能夠抑制不預期的異物附著於保護膜形成用膜。但是,於保護膜形成用複合片的切斷面中,毛邊之產生機率高,毛邊之產生未得到明顯抑制,保護膜形成用複合片的切斷適性不良。如此,比較例2的保護膜形成用複合片由於切斷適性不良,故而無法根據作為該保護膜形成用複合片之貼附對象之半導體晶圓的大小,藉由切斷來良好地調節自身的大小,不具有適於保護膜形成用膜之防污目的之特性。In Comparative Example 2, by using the antifouling sheet, when laser printing is performed on the protective film forming film, it is possible to prevent unintended foreign matter from adhering to the protective film forming film. However, in the cut surface of the composite sheet for forming a protective film, the generation rate of burrs is high, the generation of burrs is not significantly suppressed, and the cutting suitability of the composite sheet for forming a protective film is poor. In this way, the composite sheet for forming a protective film of Comparative Example 2 was poor in cutting suitability, and therefore, it was not possible to adjust itself well by cutting according to the size of the semiconductor wafer to be attached to the composite sheet for forming a protective film. The size does not have the characteristics suitable for the antifouling purpose of the protective film forming film.

於比較例2中,試片(防污片)之10%伸長時的拉伸強度在MD方向上為3.9N/15mm,在TD方向上為3.8N/15mm,在任一方向上拉伸強度均低。 如此,於比較例2中,試片(防污片)之10%伸長時的拉伸強度低,由此推測如上所述保護膜形成用複合片的切斷適性不良。 [產業可利用性]In Comparative Example 2, the tensile strength of the test piece (anti-fouling sheet) at 10% elongation is 3.9N/15mm in the MD direction and 3.8N/15mm in the TD direction, and the tensile strength is low in either direction . In this way, in Comparative Example 2, the tensile strength at 10% elongation of the test piece (anti-fouling sheet) was low, and it is estimated that the cutting suitability of the composite sheet for forming a protective film as described above was poor. [Industry Availability]

本發明能夠用於製造半導體裝置。The present invention can be used to manufacture semiconductor devices.

7:扯離機構 8:黏著片 9:半導體晶圓 9a:半導體晶圓的電路形成面 9b:半導體晶圓的內面(與保護膜形成用複合片之貼附面) 9':半導體晶片 9a':半導體晶片的電路形成面 9b':半導體晶片的內面 10,20:防污片 10a,20a:防污片的第1面 10b:防污片的第2面 11:基材 11a:基材的第1面 11b:基材的第2面 12:黏著劑層 12a:黏著劑層的第1面 13:保護膜形成用膜 13a:保護膜形成用膜的第1面 13b:保護膜形成用膜的第2面 13':保護膜 13a':保護膜的第1面 13b':保護膜的第2面 15:剝離膜 23:保護膜形成用膜(保護膜) 23a:保護膜形成用膜(保護膜)的第1面 23b:保護膜形成用膜(保護膜)的第2面 91,92:附保護膜之半導體晶片 101,101',102,103,111,1111:保護膜形成用複合片 101a,102a,103a:保護膜形成用複合片中之對半導體晶圓之貼附面 130',230:切斷後的保護膜 130a',230a:切斷後的保護膜的第1面 130b',230b:切斷後的保護膜的第2面 810:包含防污片及黏著片之積層片 901,904:第1積層體 901',902',904':第2積層體 902,905:雷射印字完畢之第2積層體 903,906:附保護膜之半導體晶片群 L:雷射光 W9 :半導體晶圓的寬度 W101 ,W102 ,W103 ,W111 :保護膜形成用複合片的寬度 W101 ',W103 ':切斷後的保護膜形成用複合片的寬度7: Pull-off mechanism 8: Adhesive sheet 9: Semiconductor wafer 9a: Circuit formation surface of semiconductor wafer 9b: Inner surface of semiconductor wafer (attachment surface with protective film forming composite sheet) 9': Semiconductor wafer 9a ': the circuit formation surface of the semiconductor wafer 9b': the inner surface of the semiconductor wafer 10, 20: the antifouling sheet 10a, 20a: the first side of the antifouling sheet 10b: the second side of the antifouling sheet 11: the base material 11a: the base The first surface of the material 11b: the second surface of the substrate 12: the adhesive layer 12a: the first surface of the adhesive layer 13: the protective film formation film 13a: the first surface of the protective film formation film 13b: the protective film formation The second side of the film 13': the protective film 13a': the first side of the protective film 13b': the second side of the protective film 15: the release film 23: the protective film forming film (protective film) 23a: the protective film forming The first surface 23b of the film (protective film): the second surface of the film (protective film) for forming a protective film 91, 92: the semiconductor wafer with a protective film 101, 101', 102, 103, 111, 1111: the composite sheet for forming a protective film 101a, 102a , 103a: The attaching surface to the semiconductor wafer in the protective film forming composite sheet 130', 230: The cut protective film 130a', 230a: The first surface of the cut protective film 130b', 230b: After cutting The second side of the protective film 810: Laminated sheet 901, 904 including anti-fouling sheet and adhesive sheet: 1st laminated body 901', 902', 904': 2nd laminated body 902, 905: Laser-printed second laminated body 903, 906 : Semiconductor chip group with protective film L: Laser light W 9 : Width of semiconductor wafer W 101 , W 102 , W 103 , W 111 : Width of composite sheet for protective film formation W 101 ', W 103 ': After cutting The width of the composite sheet for forming a protective film

[圖1]係以示意方式表示本發明的一實施形態的保護膜形成用複合片的一例之剖視圖。 [圖2]係以示意方式表示平面形狀為矩形狀或帶狀之保護膜形成用複合片的一例之俯視圖。 [圖3]係以示意方式表示平面形狀為其他形狀之保護膜形成用複合片的一例之俯視圖。 [圖4]係以示意方式表示本發明的一實施形態的保護膜形成用複合片的另一例之剖視圖。 [圖5A]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖5B]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖5C]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖5D]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖6A]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖6B]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖6C]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖7A]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖7B]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖7C]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖8A]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖8B]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。 [圖8C]係用於以示意方式說明本發明的一實施形態的附保護膜之半導體晶片之製造方法的一例之剖視圖。Fig. 1 is a cross-sectional view schematically showing an example of a composite sheet for forming a protective film according to an embodiment of the present invention. [FIG. 2] A plan view schematically showing an example of a composite sheet for forming a protective film whose planar shape is a rectangular shape or a belt shape. Fig. 3 is a plan view schematically showing an example of a composite sheet for forming a protective film whose planar shape is another shape. Fig. 4 is a cross-sectional view schematically showing another example of the composite sheet for forming a protective film according to an embodiment of the present invention. [FIG. 5A] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 5B] A cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 5C] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 5D] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 6A] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 6B] A cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 6C] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 7A] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 7B] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 7C] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 8A] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 8B] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention. [FIG. 8C] is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor wafer with a protective film according to an embodiment of the present invention.

10:防污片 10: Anti-fouling sheet

10a:防污片的第1面 10a: The first side of the anti-fouling sheet

11:基材 11: Substrate

11a:基材的第1面 11a: The first side of the substrate

11b:基材的第2面 11b: The second side of the substrate

12:黏著劑層 12: Adhesive layer

12a:黏著劑層的第1面 12a: The first side of the adhesive layer

13:保護膜形成用膜 13: Film for forming protective film

13a:保護膜形成用膜的第1面 13a: The first side of the protective film formation film

15:剝離膜 15: Peel off the film

101:保護膜形成用複合片 101: Composite sheet for protective film formation

101a:保護膜形成用複合片中之對半導體晶圓之貼附面 101a: The attaching surface to the semiconductor wafer in the composite sheet for forming a protective film

W101:保護膜形成用複合片的寬度 W 101 : Width of the composite sheet for forming a protective film

Claims (5)

一種保護膜形成用複合片,係用以貼附於半導體晶圓的內面而於前述內面形成保護膜; 前述保護膜形成用複合片具備防污片、及形成於前述防污片的一面上之保護膜形成用膜; 前述保護膜形成用膜能夠形成前述保護膜; 前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值為155mm至194mm、205mm至250mm、305mm至350mm、或455mm至500mm; 製作寬度為15mm之前述防污片之試片,進行以下之拉伸試驗,亦即於18℃至28℃之溫度條件下,將初始的夾頭間隔設為100mm,將前述試片於相對於前述試片的表面呈平行的方向上以200mm/min之速度拉伸時,前述試片能夠伸長15%以上,且前述試片伸長10%時的拉伸強度為4.0N/15mm以上。A composite sheet for forming a protective film, which is used for attaching to the inner surface of a semiconductor wafer to form a protective film on the aforementioned inner surface; The aforementioned composite sheet for forming a protective film includes an antifouling sheet and a film for forming a protective film formed on one side of the aforementioned antifouling sheet; The aforementioned protective film forming film can form the aforementioned protective film; The maximum width of the composite sheet for forming a protective film in a direction parallel to the attaching surface of the semiconductor wafer in the composite sheet for forming a protective film is 155mm to 194mm, 205mm to 250mm, 305mm to 350mm , Or 455mm to 500mm; A test piece of the aforementioned antifouling sheet with a width of 15mm was produced, and the following tensile test was carried out, that is, under the temperature condition of 18°C to 28°C, the initial chuck spacing was set to 100mm, and the aforementioned test piece was relative to When the surface of the test piece is stretched in a parallel direction at a speed of 200 mm/min, the test piece can be elongated by 15% or more, and the tensile strength of the test piece when it is extended by 10% is 4.0 N/15mm or more. 如請求項1所記載之保護膜形成用複合片,其中前述防污片係用以於使用前述保護膜形成用複合片時,防止不預期的異物附著至貼附於前述半導體晶圓的內面之前述保護膜形成用膜。The composite sheet for forming a protective film according to claim 1, wherein the antifouling sheet is used to prevent unexpected foreign matter from adhering to the inner surface of the semiconductor wafer when the composite sheet for forming the protective film is used The aforementioned protective film formation film. 如請求項1或2所記載之保護膜形成用複合片,其中前述防污片的透過清晰度為100以上。The composite sheet for forming a protective film according to claim 1 or 2, wherein the antifouling sheet has a transparency of 100 or more. 一種附保護膜之半導體晶片之製造方法,係製造由具備半導體晶片、及設置於前述半導體晶片的內面之保護膜而成之附保護膜之半導體晶片; 前述保護膜係由如請求項1至3中任一項所記載之保護膜形成用複合片中的保護膜形成用膜所形成; 於前述保護膜形成用膜為硬化性之情形時,前述保護膜形成用膜之硬化物為保護膜,於前述保護膜形成用膜為非硬化性之情形時,貼附於分割成前述半導體晶片之前的半導體晶圓的內面之後的前述保護膜形成用膜為保護膜; 前述附保護膜之半導體晶片之製造方法具有下述步驟: 第1貼附步驟,係一邊將前述保護膜形成用複合片於相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上拉伸,一邊將前述保護膜形成用複合片中的保護膜形成用膜貼附於大小小於前述保護膜形成用膜之前述半導體晶圓的內面整面,藉此製作於前述半導體晶圓的內面設置有前述保護膜形成用複合片之第1積層體; 第1切斷步驟,係將前述第1積層體中的前述保護膜形成用複合片沿著前述半導體晶圓的外周切斷,藉此製作於前述半導體晶圓的內面設置有切斷後的前述保護膜形成用複合片之第2積層體; 操作步驟,係將前述第2積層體予以操作; 第2貼附步驟,係於前述操作步驟之後,於操作後的前述第2積層體中的防污片中之與前述保護膜形成用膜或保護膜之側為相反側的面貼附黏著片; 分割步驟,係於前述第2貼附步驟之後,分割前述半導體晶圓,藉此製作半導體晶片; 第2切斷步驟,係於前述第2貼附步驟之後,切斷前述保護膜形成用膜或保護膜;以及 拾取步驟,係將具備前述切斷後的保護膜形成用膜或保護膜之前述半導體晶片自包含前述防污片及黏著片之積層片扯離而進行拾取; 於前述第1貼附步驟中,係使前述保護膜形成用複合片之相對於前述保護膜形成用複合片中之對前述半導體晶圓之貼附面呈平行的方向上的寬度的最大值,相對於前述半導體晶圓之相對於前述半導體晶圓中之與前述保護膜形成用複合片之貼附面呈平行的方向上的寬度的最大值成為101.1%至129.3%; 於前述保護膜形成用膜為硬化性之情形時,進而具有硬化步驟,係於前述操作步驟之後,使前述保護膜形成用膜硬化,藉此形成保護膜。A method for manufacturing a semiconductor chip with a protective film, which is to manufacture a semiconductor chip with a protective film formed by a semiconductor chip and a protective film provided on the inner surface of the aforementioned semiconductor chip; The aforementioned protective film is formed of the protective film formation film in the composite sheet for protective film formation as described in any one of claims 1 to 3; When the protective film formation film is curable, the cured product of the protective film formation film is a protective film, and when the protective film formation film is non-curable, it is attached to the divided semiconductor wafer The aforementioned protective film forming film behind the inner surface of the previous semiconductor wafer is a protective film; The aforementioned manufacturing method of a semiconductor chip with a protective film has the following steps: The first attaching step is to stretch the composite sheet for forming a protective film in a direction parallel to the attaching surface of the semiconductor wafer in the composite sheet for forming a protective film, while stretching the protective film The protective film forming film in the forming composite sheet is attached to the entire inner surface of the semiconductor wafer that is smaller in size than the protective film forming film, and the protective film is formed on the inner surface of the semiconductor wafer. Use the first layered body of the composite sheet; The first cutting step is to cut the composite sheet for forming the protective film in the first laminate along the outer periphery of the semiconductor wafer, thereby preparing the semiconductor wafer with the cut The second laminate of the composite sheet for forming a protective film; The operation step is to operate the aforementioned second layered body; The second attaching step is to attach the adhesive sheet to the surface of the antifouling sheet in the second laminate after the operation on the side opposite to the side of the protective film forming film or the protective film after the operation. ; The dividing step is after the second attaching step, dividing the semiconductor wafer to produce a semiconductor wafer; The second cutting step is to cut the protective film forming film or protective film after the second attaching step; and In the picking step, the semiconductor wafer provided with the cut protective film forming film or the protective film is separated from the laminated sheet containing the antifouling sheet and the adhesive sheet to be picked up; In the first attaching step, the maximum width of the composite sheet for forming a protective film in a direction parallel to the attaching surface of the semiconductor wafer in the composite sheet for forming a protective film is made, The maximum width of the semiconductor wafer in the direction parallel to the attachment surface of the protective film forming composite sheet in the semiconductor wafer is 101.1% to 129.3%; When the film for forming a protective film is curable, a curing step is further provided. After the above-mentioned operation step, the film for forming a protective film is cured to form a protective film. 如請求項4所記載之附保護膜之半導體晶片之製造方法,其中前述操作步驟係藉由對前述第2積層體中的保護膜形成用膜照射雷射光而進行印字之印字步驟。The method for manufacturing a semiconductor wafer with a protective film described in claim 4, wherein the above-mentioned operation step is a printing step of printing by irradiating the film for forming a protective film in the second layered body with laser light.
TW109115276A 2019-06-21 2020-05-08 Composite sheet for protective film formation and method for manufacturing semiconductor wafer with protective film TWI833953B (en)

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