TW202104131A - Substrate for display device, method for producing the same, and resin composition solution for making the antireflection layer of that substrate - Google Patents

Abstract

The present invention provides a substrate for a display device having a light-shielding film whose reflection of light is sufficiently suppressed, a method of manufacturing the same, and a resin composition solution for an anti-reflection layer used in these. The substrate includes a transparent substrate and a light-shielding film. The light-shielding film includes: an anti-reflection layer which is arranged on the transparent substrate, contains an inorganic filler with a refractive index of 1.2 to 1.8 and a transparent resin cured product and has an average thickness of 0.01 [mu]m to 1 [mu]m; and a light-shielding layer which is disposed on the anti-reflection layer, contains at least one light-shielding component selected from the group consisting of organic black pigments, inorganicblack pigments, and mixed-color pseudo-black pigments and a resin cured product, and has an average thickness of 0.1 [mu]m to 30 [mu]m. The surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light-shielding layer is 40 nm to 200 nm.

Description

Substrate for display device, manufacturing method thereof, and resin composition solution for anti-reflection layer used in these

The present invention relates to a substrate for a display device, a method of manufacturing the same, and a resin composition solution for an anti-reflection layer used in these, and more specifically to a substrate for a display device having a light-shielding film, a method of manufacturing the same, and these Resin composition solution for anti-reflection layer used in.

In display devices such as liquid crystal displays, for the purpose of improving contrast or preventing light leakage, a grid, stripe, or mosaic black matrix (Black Matrix) is formed at the boundary of each pixel such as red, green, and blue. ) And other light-shielding films. As such a light-shielding film, a light-shielding film formed on a transparent substrate using a photosensitive resin composition containing a light-shielding component such as a black pigment is known. However, in a display device having a transparent substrate with such a light-shielding film disposed on the surface, the The light incident on the transparent substrate side is reflected on the surface of the light-shielding film (the interface with the transparent substrate), so there is a problem that objects placed around it will be reflected on the screen.

Therefore, in order to solve the problems such as reflections, methods of suppressing the reflection of light on the surface of the light-shielding film have been studied. For example, International Publication No. 2010/070929 (Patent Document 1) describes that in a substrate for a display panel having a transparent substrate and a light-shielding layer, two types of different optical densities are provided as the light-shielding layer on the transparent substrate. A light-shielding layer, and a light-shielding layer with a lower optical density than the light-shielding layer with a higher optical density is arranged between the transparent substrate and the light-shielding layer with a high optical density to suppress the reflection of light on the surface of the light-shielding layer. Furthermore, International Publication No. 2014/178149 (Patent Document 2) describes that in a substrate for a display device having a transparent substrate and a black matrix, the effective optical density of the black matrix is at a certain level by stacking on the transparent substrate. The reflectivity reduction layer and the light-shielding layer within the range of, to suppress the reflection of light on the surface of the black matrix. [Prior Art Literature]

[Patent Literature] [Patent Document 1] International Publication No. 2010/070929 [Patent Document 2] International Publication No. 2014/178149

[The problem to be solved by the invention] However, in the substrates for display devices described in Patent Document 1 and Patent Document 2, the reflection of light on the surface of the light-shielding film (light-shielding layer, black matrix) may not be sufficiently suppressed. In order to improve the contrast or prevent light leakage, it is necessary to further suppress the light. Reflection on the shading film.

The present invention is made in view of the problems of the above-mentioned prior art, and an object thereof is to provide a substrate for a display device having a light-shielding film in which reflection of light is sufficiently suppressed, and a method of manufacturing the same.

[Technical means to solve the problem] The inventors of the present invention have repeatedly conducted active studies to achieve the above-mentioned object. As a result, they have found that in a substrate for a display device having a transparent substrate and a light-shielding film, by providing a light-shielding film including an anti-reflection layer and a light-shielding layer on the transparent substrate And the light-shielding film with the surface roughness of the anti-reflection layer in the specific range at the interface of the anti-reflection layer and the light-shielding layer can further suppress the reflection of light on the surface of the light-shielding film, thereby completing the present invention.

That is, the substrate for a display device of the present invention is characterized by including a transparent substrate and a light-shielding film, and the light-shielding film includes: an inorganic filler having a refractive index of 1.2 to 1.8 and a transparent resin cured product arranged on the transparent substrate, And an anti-reflection layer with an average thickness of 0.01 μm-1 μm; and disposed on the anti-reflection layer, containing at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and mixed-color pseudo-black pigments And a resin cured product, and a light-shielding layer with an average thickness of 0.1 μm-30 μm, and the surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light-shielding layer is 40 nm to 200 nm.

In such a substrate for a display device, it is preferable that the average particle diameter of the inorganic filler is 25 nm to 300 nm, and it is preferable that the content of the inorganic filler relative to the whole anti-reflection layer is 5 mass% to 95 mass%.

Furthermore, the first method for manufacturing a substrate for a display device of the present invention is a method for manufacturing a substrate for a display device including a transparent substrate and a light-shielding film including an anti-reflection layer and a light-shielding layer disposed on the transparent substrate, and is characterized in ,include: On the transparent substrate, a resin composition for an anti-reflection layer containing an inorganic filler with a refractive index of 1.2 to 1.8 and a photocurable transparent resin, an average thickness of 0.01 μm to 1 μm, and a surface roughness of 40 nm to 200 nm is formed Physical layer steps; On the resin composition layer for the anti-reflection layer, a resin for a light-shielding layer containing at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and mixed-color pseudo-black pigments and a photocurable resin is formed The steps of the composition layer; and After the resin composition layer for the anti-reflection layer and the resin composition layer for the light-shielding layer are subjected to exposure treatment together, they are also subjected to a development treatment and heat treatment (post-baking) is carried out to form a layer containing the inorganic The step of filling an anti-reflection layer of a filler and a transparent resin cured product, and a light shielding layer containing the light shielding component and the resin cured product and having an average thickness of 0.1 μm to 30 μm.

In this first method of manufacturing a substrate for a display device, it is preferable that the photocurable transparent resin in the resin composition layer for the anti-reflection layer and the photocurable resin in the resin composition layer for the light-shielding layer All resins are alkali-soluble, and the development treatment is alkali development treatment.

Furthermore, the second method of manufacturing a substrate for a display device of the present invention is a method of manufacturing a substrate for a display device including a transparent substrate and a light shielding film including an anti-reflection layer and a light shielding layer disposed on the transparent substrate, and is characterized in ,include: On the transparent substrate, a resin composition for an anti-reflection layer containing at least one of an inorganic filler with a refractive index of 1.2 to 1.8, a thermosetting transparent resin, and a thermosetting monomer is heat-cured to form an average thickness The step of an anti-reflection layer with a surface roughness of from 0.01 μm to 1 μm and a surface roughness of from 40 nm to 200 nm; and On the anti-reflection layer, a resin composition for a light-shielding layer containing at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and mixed-color pseudo-black pigments and a photocurable resin is subjected to exposure treatment After that, a development process is performed, and a heating process (post-baking) is performed to form a step of forming a light-shielding layer with an average thickness of 0.1 μm to 30 μm.

In the second method of manufacturing a substrate for a display device, it is preferable that the photocurable resin in the resin composition layer for the light-shielding layer is alkali-soluble, and the development treatment is an alkali development treatment.

Furthermore, the first resin composition solution for an anti-reflection layer of the present invention contains a photohardening layer capable of forming a resin composition layer for an anti-reflection layer having an average thickness of 0.01 μm to 1 μm and a surface roughness of 40 nm to 200 nm. A resin composition solution of a sexual resin composition and an organic solvent, and is characterized in that: The photocurable resin composition contains: 5% to 95% by mass relative to the entire resin composition, a refractive index of 1.2 to 1.8, an average particle diameter of 25 nm to 300 nm, and can be dispersed in the organic solvent Inorganic filler; relative to the entire resin composition, 1.54% to 95% by mass of the photocurable transparent resin; relative to the total amount of the photocurable transparent resin and the photopolymerizable monomer, it is 0 Mass% to 50% by mass of the photopolymerizable monomer; and 0 to 30 parts by mass of photopolymerization initiation relative to 100 parts by mass of the total amount of the photocurable transparent resin and the photopolymerizable monomer Agent, and The content of the organic solvent is 80% by mass to 99.9% by mass relative to the total amount of the resin composition for the antireflection layer and the organic solvent, The viscosity of the solution is 1 mPa·sec～4 mPa·sec.

In addition, the second resin composition solution for an anti-reflection layer of the present invention contains a thermosetting resin composition capable of forming an anti-reflection layer having an average thickness of 0.01 μm to 1 μm and a surface roughness of 40 nm to 200 nm, And an organic solvent resin composition solution, and is characterized in that: The thermosetting resin composition contains: 5% to 95% by mass relative to the entire resin composition, a refractive index of 1.2 to 1.8, an average particle size of 25 nm to 300 nm, and can be dispersed in the organic solvent Inorganic filler in the resin composition; at least one of a thermosetting transparent resin and a thermosetting monomer of 3.2% to 94.06% by mass relative to the entire resin composition; and relative to the thermosetting transparent resin and the The total amount of the thermosetting monomer is 100 parts by mass, which is 1 part by mass to 25 parts by mass of the thermosetting agent, and The content of the organic solvent is 80% by mass to 99.9% by mass relative to the total amount of the resin composition for the antireflection layer and the organic solvent, The viscosity of the solution is 1 mPa·sec～4 mPa·sec.

[Effects of the invention] According to the present invention, it is possible to obtain a substrate for a display device having a light-shielding film in which reflection of light is sufficiently suppressed.

Hereinafter, the present invention will be described in detail in combination with its preferred embodiments.

First, the substrate for a display device of the present invention will be described. The substrate for a display device of the present invention includes a transparent substrate and a light-shielding film. The light-shielding film includes: disposed on the transparent substrate, containing an inorganic filler having a refractive index in a specific range and a transparent resin cured product, and having an average thickness in a specific range. An anti-reflection layer within the range of; is disposed on the anti-reflection layer, and contains at least one light-shielding component and a resin cured product selected from the group consisting of organic black pigments, mixed-color pseudo-black pigments and inorganic black pigments, and average The thickness of the light shielding layer is within a specific range, and the surface roughness of the antireflection layer at the interface between the antireflection layer and the light shielding layer is within the specific range.

The transparent substrate used in the present invention is not particularly limited. For example, a glass substrate, a transparent resin film (polyethylene terephthalate (PET) film, polyethylene naphthalate ( Polyethylene naphthalene (PEN) film, polycarbonate film, polyimide film, etc.) and known transparent substrates used in display devices.

The light-shielding film in the present invention includes an anti-reflection layer and a light-shielding layer, and in the display device substrate of the present invention, a black matrix, such as a color filter or a complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) sensor, etc. Touch panel frame (bezel), black column spacer (Blackcolumnspacer), black partition wall (bank material), etc. Moreover, such a light-shielding film is disposed on the transparent substrate. In more detail, the anti-reflection layer is disposed on the transparent substrate, and the light-shielding layer is disposed on the anti-reflection layer.

The anti-reflection layer contains an inorganic filler having a refractive index of 1.2 to 1.8. The inorganic filler having such a refractive index has a refractive index smaller than the refractive index of the light-shielding component described later. By using such an inorganic filler with a small refractive index, the reflectance of the light-shielding film is reduced, and the reflection of light on the light-shielding film is suppressed. The refractive index of such an inorganic filler is preferably 1.3 to 1.6, more preferably 1.4 to 1.5.

Examples of inorganic fillers having such a refractive index include silicon dioxide (refractive index: 1.46), magnesium fluoride (refractive index: 1.38), lithium fluoride (refractive index: 1.39), and calcium fluoride (refractive index: 1.40). ), etc. Among them, silicon dioxide (refractive index: 1.46) is particularly preferred. Moreover, such an inorganic filler (especially silica) is preferably manufactured or surface-treated to be able to be dispersed in an organic solvent. As such silica that is manufactured or surface-treated to be dispersed in an organic solvent, fumed silica, colloidal silica, organic silica sol (Organo silica sol), such as organic silica sol manufactured by Nissan Chemical Co., Ltd., admafine manufactured by Admatechs Co., Ltd. and Admanano (ADMANANO), Colloidal silica, organic silica sol and silica nano powder (SILICA NANO POWDER) manufactured by Fuso Chemical Industry Co., Ltd., fumed silica manufactured by Aerosil Co., Ltd., etc. The silicon dioxide sold under the trade name can be dispersed in an organic solvent.

The average particle size of the inorganic filler is preferably 25 nm to 300 nm, more preferably 30 nm to 260 nm, and particularly preferably 30 nm to 220 nm. If the average particle size of the inorganic filler is less than the lower limit, the surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light shielding layer tends to be less than the lower limit of the predetermined range. On the other hand, if the upper limit is exceeded, the surface roughness of the antireflection layer at the interface between the antireflection layer and the light shielding layer tends to exceed the upper limit of the predetermined range. In addition, the average particle size of the inorganic filler can be determined by a particle size distribution measurement using a dynamic light scattering method or the like.

The content of the inorganic filler is preferably 5% by mass to 95% by mass, more preferably 15% by mass to 90% by mass, and particularly preferably 25% by mass to 85% by mass relative to the entire antireflection layer. If the content of the inorganic filler is less than the lower limit, the surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light-shielding layer tends to be less than the lower limit of the predetermined range. On the other hand, If the upper limit is exceeded, the surface roughness of the antireflection layer at the interface between the antireflection layer and the light shielding layer tends to exceed the upper limit of the predetermined range.

Furthermore, the anti-reflection layer contains a transparent resin cured product. The cured transparent resin is not particularly limited, and examples thereof include cured products of photocurable transparent resins, thermosetting transparent resins, and thermosetting monomers, which will be described later. The content of the cured transparent resin is preferably 4% by mass to 95% by mass, more preferably 9% by mass to 85% by mass, and particularly preferably 14% by mass to 75% by mass relative to the entire antireflection layer. If the content of the transparent resin cured product is less than the lower limit, the surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light-shielding layer tends to exceed the upper limit of the predetermined range. On the other hand, if the upper limit is exceeded, the surface roughness of the antireflection layer at the interface between the antireflection layer and the light shielding layer tends to be less than the lower limit of the predetermined range.

In the light-shielding film of the present invention, the average thickness of the anti-reflection layer is 0.01 μm to 1 μm. If the average thickness of the anti-reflection layer is less than the lower limit, the surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light shielding layer tends to exceed the upper limit of the predetermined range. On the other hand, if the upper limit is exceeded, the surface roughness of the antireflection layer at the interface between the antireflection layer and the light shielding layer tends to be less than the lower limit of the predetermined range. The average thickness of such an anti-reflection layer is preferably from 0.02 μm to 0.5 μm, and more preferably from 0.04 μm to 0.3 μm from the viewpoint that the surface roughness of the anti-reflection layer is easily within a predetermined range. In addition, the average thickness of the anti-reflection layer can be obtained by measuring the step difference between the surface of the anti-reflection layer and the surface of the transparent substrate using a stylus type step shape measuring device, and averaging them.

The light-shielding layer contains at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and color-mixed pseudo-black pigments. Examples of organic black pigments include perylene black, aniline black, cyanine black, and internal amide black. As an inorganic black pigment, carbon black, chromium oxide, iron oxide, titanium black, etc. are mentioned. Examples of the mixed-color pseudo-black pigment include pigments obtained by mixing two or more kinds of pigments, such as red, blue, green, purple, yellow, cyanine, and magenta, to pseudo-black. These light-shielding components may be used individually by 1 type, and may use 2 or more types together. Furthermore, among these light-shielding components, carbon black is particularly preferable from the viewpoint of good light-shielding properties, surface smoothness, dispersion stability, and compatibility with resins.

The average particle diameter of the light-shielding component is preferably 10 nm to 300 nm, more preferably 30 nm to 250 nm, and particularly preferably 50 nm to 220 nm. If the average particle diameter of the light-shielding component is less than the lower limit, the light-shielding property of the light-shielding layer tends to decrease. On the other hand, if it exceeds the upper limit, the surface smoothness of the light-shielding layer and the The dispersion uniformity of the light-shielding component tends to decrease. In addition, the average particle size of the light-shielding component can be determined by particle size distribution measurement by dynamic light scattering method or the like.

As the content of the light-shielding component, when carbon black is used as the light-shielding component, relative to the entire light-shielding layer, it is preferably 10% by mass to 65% by mass, more preferably 15% by mass to 60% by mass, and particularly preferably 20% by mass to 55% by mass. Furthermore, when a substance other than carbon black is used as the light-shielding component, relative to the entire light-shielding layer, it is preferably 10% by mass to 90% by mass, more preferably 20% by mass to 80% by mass, and particularly preferably 30% by mass. ～70% by mass. If the content of the light-shielding component is less than the lower limit, the light-shielding property of the light-shielding layer tends to decrease. On the other hand, if the content exceeds the upper limit, the surface smoothness of the light-shielding layer and the light-shielding component are present. The tendency of the uniformity of dispersion to decrease.

Furthermore, the light-shielding layer contains a cured resin. The resin cured product is not particularly limited, and for example, a cured product of a photocurable resin described later can be cited. As the content of the resin cured product, when carbon black is used as the light-shielding component, relative to the entire light-shielding layer, it is preferably 34% by mass to 90% by mass, more preferably 39% by mass to 85% by mass, particularly It is 44% by mass to 80% by mass. In addition, when a substance other than carbon black is used as the light-shielding component, relative to the entire light-shielding layer, it is preferably 9% by mass to 90% by mass, more preferably 19% by mass to 80% by mass, and particularly preferably 29% by mass. ～70% by mass. If the content of the cured resin is less than the lower limit, the surface smoothness of the light-shielding layer and the uniformity of dispersion of the light-shielding components tend to decrease. On the other hand, if the content exceeds the upper limit, the The light-shielding layer tends to decrease.

In the light-shielding film of the present invention, the average thickness of the light-shielding layer is 0.1 μm to 30 μm. If the average thickness of the light-shielding layer is less than the lower limit, the light-shielding property of the light-shielding layer will decrease. On the other hand, if it exceeds the upper limit, the time required for alkali development will become longer and productivity will decrease. The average thickness of such a light-shielding layer is preferably 0.5 μm to 20 μm, and more preferably 1 μm to 10 μm from the viewpoint of both light-shielding properties and productivity. In addition, the average thickness of the light-shielding layer can be obtained by measuring the level difference between the surface of the light-shielding film and the surface of the transparent substrate using a stylus-type step shape measuring device, and averaging them to obtain the average thickness of the light-shielding film , And subtract the average thickness of the anti-reflection layer from the average thickness of the light-shielding film.

Furthermore, in the light-shielding film of the present invention, the surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light-shielding layer is 40 nm to 200 nm. If the surface roughness of the anti-reflection layer is less than the lower limit, the reflectance of the light-shielding film cannot be sufficiently reduced, and the reflection of light on the light-shielding film cannot be sufficiently prevented. On the other hand, if the surface roughness of the anti-reflection layer exceeds the upper limit, it is difficult to make the flatness of the light shielding film to a desired level. As for the surface roughness of such an anti-reflection layer, the reflectance of the light-shielding film is reduced, the reflection of light on the light-shielding film is suppressed, and from the viewpoint of ensuring the flatness of the light-shielding film, it is preferably 50 nm to 180 nm, more preferably 80 nm to 160 nm.

Next, a method of manufacturing a substrate for a display device of the present invention will be described. The first method for manufacturing a substrate for a display device of the present invention is a method for manufacturing a substrate for a display device including a transparent substrate and a light-shielding film including an anti-reflection layer and a light-shielding layer disposed on the transparent substrate, and includes: On the transparent substrate, a resin for an anti-reflection layer containing an inorganic filler having a refractive index in a specific range and a light-curing transparent resin, an average thickness of 0.01 μm to 1 μm, and a surface roughness of 40 nm to 200 nm is formed Steps of the composition layer; On the resin composition layer for the anti-reflection layer, a resin for a light-shielding layer containing at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and mixed-color pseudo-black pigments and a photocurable resin is formed The steps of the composition layer; and After the resin composition layer for the anti-reflection layer and the resin composition layer for the light-shielding layer are subjected to exposure treatment together, they are also subjected to a development treatment and heat treatment (post-baking) is carried out to form a layer containing the inorganic The step of filling an anti-reflection layer of a filler and a transparent resin cured product, and a light shielding layer containing the light shielding component and the resin cured product and having an average thickness of 0.1 μm to 30 μm.

Furthermore, the second method for manufacturing a substrate for a display device of the present invention is a method for manufacturing a substrate for a display device including a transparent substrate and a light-shielding film including an anti-reflection layer and a light-shielding layer disposed on the transparent substrate, and includes: On the transparent substrate, a resin composition for an anti-reflection layer containing at least one of an inorganic filler having a refractive index in a specific range, a thermosetting transparent resin, and a thermosetting monomer is heat-cured to form an average The step of having an anti-reflection layer having a thickness of 0.01 μm to 1 μm and a surface roughness of 40 nm to 200 nm; and On the anti-reflection layer, a resin composition for a light-shielding layer containing at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and mixed-color pseudo-black pigments and a photocurable resin is subjected to exposure treatment After that, a development process is performed, and a heating process (post-baking) is performed to form a step of forming a light-shielding layer with an average thickness of 0.1 μm to 30 μm. In this second method of manufacturing a substrate for a display device, after forming the light-shielding layer (light-shielding layer pattern), if necessary, the upper part of the anti-reflection layer without a light-shielding layer may be removed by etching. The anti-reflection layer of the part (the part where the resin composition layer for the upper light-shielding layer is removed during the development process) is also patterned on the anti-reflection layer.

The transparent substrate, the inorganic filler having a refractive index in a specific range, and the light-shielding component used in the manufacturing methods of the first and second display device substrates of the present invention are the description of the display device substrate of the present invention The transparent substrate, inorganic filler, and light-shielding component described in.

The resin composition for the anti-reflection layer (hereinafter referred to as "the first resin composition for the anti-reflection layer") used in the method for manufacturing the first display device substrate of the present invention contains the inorganic filler and photocuring Transparent resin. The photocurable transparent resin is not particularly limited as long as it is a transparent resin that can be cured by light irradiation (for example, ultraviolet (UV) irradiation). In terms of excellent developability, it is preferably Alkali-soluble photocurable transparent resin, and from the viewpoint of excellent photocurability and patterning properties, it is preferably alkali-soluble polymerizable unsaturated group-containing alkali-soluble resin described in Japanese Patent Laid-Open No. 2017-72760 A resin, that is, a compound having two or more epoxy groups (more preferably an epoxy compound obtained by reacting bisphenols and epihalohydrin) with (meth)acrylic acid (refers to "acrylic acid and/or methyl The epoxy (meth)acrylate acid adduct obtained by further reacting the reaction product of acrylic acid) with a polycarboxylic acid or its anhydride is particularly preferably an epoxy acrylate acid adduct derived from a bisphenol compound.

In the first resin composition for anti-reflection layer, the content of the inorganic filler relative to the entire first resin composition for anti-reflection layer is preferably 5% to 95% by mass, and more preferably 15% by mass to 90% by mass, particularly preferably 25% by mass to 85% by mass. Furthermore, as the content of the photocurable transparent resin, relative to the entire resin composition for the first anti-reflection layer, it is preferably 1.54% by mass to 95% by mass, more preferably 3.46% by mass to 85% by mass, especially Preferably, it is 5.38% by mass to 75% by mass. If the content of the inorganic filler is less than the lower limit (or if the content of the photocurable transparent resin exceeds the upper limit), the anti-reflection layer at the interface between the formed anti-reflection layer and the light-shielding layer is present The surface roughness tends to be less than the lower limit of the prescribed range. On the other hand, if the content of the inorganic filler exceeds the upper limit (or if the content of the photocurable transparent resin is less than the lower limit), there is The surface roughness of the anti-reflection layer at the interface between the formed anti-reflection layer and the light-shielding layer tends to exceed the upper limit of the predetermined range.

Furthermore, a photopolymerizable monomer may be contained in such a first resin composition for an anti-reflection layer. Thereby, it is possible to rationalize the sensitivity at the time of optical processing of the anti-reflection layer, or to rationalize the mechanical properties of the film such as the surface hardness of the formed anti-reflection layer. The photopolymerizable monomer is not particularly limited. For example, a photopolymerizable monomer having at least one ethylenically unsaturated bond described in Japanese Patent Laid-Open No. 2017-72760 (for example, having at least one ethylenic (Meth)acrylates with sexually unsaturated bonds). As the content of such a photopolymerizable monomer, relative to the total amount of the photocurable transparent resin and the photopolymerizable monomer, it is preferably 0% by mass to 50% by mass, more preferably 0% by mass to 40% by mass %, particularly preferably 0% to 30% by mass.

In addition, it is preferable to include a photopolymerization initiator in the first resin composition for an anti-reflection layer. Such a photopolymerization initiator is not particularly limited, and examples thereof include photopolymerization initiators described in JP 2017-72760 A. Among these, oxime ester-based polymerization initiators are particularly preferred. The content of such a photopolymerization initiator can be appropriately set according to the photocurability of the first resin composition for an anti-reflection layer, and for example, relative to 100 parts by mass of the total amount of the photocurable resin and the photopolymerizable monomer, It is preferably 0 parts by mass to 30 parts by mass, more preferably 0 parts by mass to 25 parts by mass.

Moreover, when the heat resistance of the transparent substrate is low, and the heat treatment (post-baking) after development is performed at a low temperature such as 150°C or lower, it is preferable to use the first resin composition for anti-reflection layer Contains an azo polymerization initiator. As a result, the thermal radical polymerizability of the first resin composition for an anti-reflection layer at the time of heating (at the time of post-baking) after development is improved. The azo polymerization initiator is not particularly limited, and examples thereof include azo polymerization initiators described in JP 2017-181976 A. The content of such an azo-based polymerization initiator is not particularly limited, and can be appropriately set according to the thermal radical polymerizability of the first resin composition for anti-reflection layer.

In addition, in the first resin composition for an anti-reflection layer, if necessary, a dispersant, a polymerization initiator other than the photopolymerization initiator and an azo polymerization initiator, a chain transfer agent, and a sensitizer may be prepared. Various additives such as agents, non-photosensitive resins, hardeners, hardening accelerators, antioxidants, plasticizers, fillers, coupling agents, surfactants, dyes, etc.

Furthermore, the first resin composition for an anti-reflection layer is preferably used in a solution state (that is, in the form of a solution of the first resin composition for an anti-reflection layer). Thereby, a uniform resin composition layer for an anti-reflection layer can be formed. The organic solvent used in such a first resin composition solution for an anti-reflection layer is not particularly limited, and examples thereof include solvents described in Japanese Patent Application Laid-Open No. 2017-72760. Regarding such an organic solvent, it is preferable to prepare the organic solvent so that the amount of the organic solvent becomes 80% to 99.9% by mass relative to the total amount of the first resin composition for antireflection layer and the organic solvent, and more preferably The solution viscosity (B-type or E-type viscometer) of the first resin composition solution for the anti-reflection layer is prepared so that it becomes 1 mPa·sec to 4 mPa·sec. The preferred range of the viscosity of this solution varies with the coating method, and therefore the preferred range of the amount of the organic solvent also varies with the coating method. For example, in the case of a spin coating method, it is preferably 80% by mass to 85% by mass near the lower limit of the preferable range of the amount of the organic solvent, and in the case of a slit coating method, it is more preferable It is 99.0% by mass to 99.9% by mass near the upper limit of the preferable range of the amount of the organic solvent.

As the first resin composition solution for an anti-reflection layer of the present invention, a resin composition solution containing a photocurable resin composition and an organic solvent has a typical formulation composition, and in the resin composition solution, The photocurable resin composition contains: 25% to 85% by mass relative to the entire resin composition, a refractive index of 1.2 to 1.8, an average particle diameter of 30 nm to 220 nm, and can be dispersed in the organic solvent The silicon dioxide particles in the resin composition; and the epoxy (meth)acrylate acid adduct of 15% to 75% by mass relative to the entire resin composition, and The content of the organic solvent is 80% by mass to 99.9% by mass relative to the total amount of the photocurable resin composition and the organic solvent, The viscosity of the solution is 1 mPa·sec～4 mPa·sec. In such a first resin composition solution for an anti-reflection layer, the epoxy (meth)acrylate acid adduct is particularly preferably an epoxy acrylate acid adduct derived from a bisphenol compound.

On the other hand, the resin composition for the anti-reflection layer (hereinafter referred to as "the second resin composition for the anti-reflection layer") used in the method for manufacturing the second display device substrate of the present invention contains the inorganic At least one of filler, thermosetting transparent resin, and thermosetting monomer. The thermosetting transparent resin and the thermosetting monomer are not particularly limited as long as they are transparent resins and monomers that can be cured by heat treatment. For example, those described in Japanese Patent Laid-Open No. 2016-161926 may be mentioned. The described resins having ethylenically unsaturated double bonds or cyclic reactive groups (epoxy compounds, oxetane compounds, etc.) and monomers having ethylenically unsaturated double bonds or cyclic reactive groups.

In this second type of anti-reflection layer resin composition, the content of the inorganic filler relative to the entire second type of anti-reflection layer resin composition is preferably 5% to 95% by mass, more preferably 15% by mass to 90% by mass, particularly preferably 25% by mass to 85% by mass. Furthermore, the content of at least one of the thermosetting transparent resin and the thermosetting monomer is preferably 3.2% by mass to 94.06% by mass relative to the entire resin composition for the second antireflection layer, and more preferably It is 7.2% by mass to 84.16% by mass, particularly preferably 11.2% by mass to 74.26% by mass. If the content of the inorganic filler is less than the lower limit (or if the content of the thermosetting transparent resin exceeds the upper limit), the anti-reflection layer at the interface between the formed anti-reflection layer and the light-shielding layer is present The surface roughness tends to be less than the lower limit of the prescribed range. On the other hand, if the content of the inorganic filler exceeds the upper limit (or if the content of the thermosetting transparent resin is less than the lower limit), there is The surface roughness of the anti-reflection layer at the interface between the formed anti-reflection layer and the light-shielding layer tends to exceed the upper limit of the predetermined range.

Furthermore, it is preferable to include a thermosetting agent in the second resin composition for an anti-reflection layer. Examples of such thermosetting agents include those used as thermosetting agents for epoxy compounds such as amine compounds, polycarboxylic acid compounds, phenol resins, amino resins, dicyandiamine, and Lewis acid complex compounds. Among them, polycarboxylic acid-based compounds are preferred. Examples of such polyvalent carboxylic acid compounds include polyvalent carboxylic acids, anhydrides of polyvalent carboxylic acids, and thermally decomposable esters of polyvalent carboxylic acids. Polycarboxylic acid is a compound having two or more carboxyl groups in one molecule, specifically, succinic acid, maleic acid, cyclohexane-1,2-dicarboxylic acid, cyclohexene-1,2-di Carboxylic acid, cyclohexene-4,5-dicarboxylic acid, norbornane-2,3-dicarboxylic acid, phthalic acid, 3,6-dihydrophthalic acid, 1,2,3,6 -Tetrahydrophthalic acid, methyltetrahydrophthalic acid, benzene-1,2,4-tricarboxylic acid, cyclohexane-1,2,4-tricarboxylic acid, benzene-1,2,4 ,5-tetracarboxylic acid, cyclohexane-1,2,4,5-tetracarboxylic acid, butane-1,2,3,4-tetracarboxylic acid, etc. As an anhydride of a polyhydric carboxylic acid, the anhydride of the said exemplified polyhydric carboxylic acid is mentioned. As the anhydride of such a polyvalent carboxylic acid, an intermolecular acid anhydride can be used, and in general, an acid anhydride that is ring-closed in the molecule is used. Examples of the thermally decomposable esters of polycarboxylic acids include the exemplified thermally decomposable esters of polycarboxylic acids (for example, tertiary butyl ester, 1-(alkyloxy)ethyl ester, and 1-(alkylthio)). Ethyl ester, etc. [wherein, the alkyl group is a saturated or unsaturated hydrocarbon group with 1 to 20 carbons. This hydrocarbon group may have any structure of linear, branched, or cyclic, and may also have any Substituents). Furthermore, as the polycarboxylic acid-based compound, a polymer or copolymer having two or more carboxyl groups may also be used, and the carboxyl groups may also form an anhydride group or a thermally decomposable ester group. The polymer or copolymer having two or more carboxyl groups is not particularly limited, and examples thereof include polymers or copolymers containing (meth)acrylic acid as a constituent, copolymers containing maleic anhydride as a constituent, Compounds etc. obtained by reacting tetracarboxylic dianhydride with diamine or diol to open the ring of acid anhydride. Among these polycarboxylic acid compounds, phthalic acid, 3,6-dihydrophthalic acid, 1,2,3,6-tetrahydrophthalic acid, and methyltetrahydrophthalic acid are preferred. , Anhydrides of polycarboxylic acids of benzene-1,2,4-tricarboxylic acid. The content of such a thermosetting agent can be appropriately set according to the thermosetting properties of the second resin composition for an anti-reflection layer, and for example, relative to 100 parts by mass of the total amount of the thermosetting transparent resin and the thermosetting monomer, Preferably it is 1 part by mass to 25 parts by mass.

In addition, in the second resin composition for an anti-reflection layer, if necessary, a dispersant, a non-thermosetting resin, a curing accelerator, an antioxidant, a plasticizer, a filler, a coupling agent, and a surface active agent may be formulated. Various additives such as chemicals and dyes.

Furthermore, the second resin composition for an anti-reflection layer is preferably used in a solution state (that is, in the form of a solution of the second resin composition for an anti-reflection layer). Thereby, a uniform resin composition layer for an anti-reflection layer can be formed. The organic solvent used in the second resin composition solution for an antireflection layer is not particularly limited, and examples thereof include solvents described in JP 2016-161926 A. Regarding such an organic solvent, it is preferable to prepare the organic solvent so that the amount of the organic solvent becomes 80% to 99.9% by mass relative to the total amount of the second resin composition for anti-reflection layer and the organic solvent, and more preferably The second resin composition solution for an anti-reflection layer is formulated so that the solution viscosity (B-type or E-type viscometer) becomes 1 mPa·sec to 4 mPa·sec. The preferred range of the viscosity of this solution varies with the coating method, and therefore the preferred range of the amount of the organic solvent also varies with the coating method. For example, in the case of a spin coating method, it is preferably 80% by mass to 85% by mass near the lower limit of the preferable range of the amount of the organic solvent, and in the case of a slit coating method, it is more preferable It is 99.0% by mass to 99.9% by mass near the upper limit of the preferable range of the amount of the organic solvent.

As the second resin composition solution for the anti-reflection layer of the present invention, a resin composition solution containing a thermosetting resin composition and an organic solvent is a resin composition solution containing a thermosetting resin composition and an organic solvent, and in the resin composition solution, The thermosetting resin composition contains: 25% to 85% by mass relative to the entire resin composition, a refractive index of 1.2 to 1.8, an average particle diameter of 30 nm to 220 nm, and can be dispersed in the organic solvent The silicon dioxide particles in the resin composition; the epoxy compound of 12% to 74.26% by mass relative to the entire resin composition; and the thermosetting of 1 to 25 parts by mass relative to 100 parts of the epoxy compound Agent, and The content of the organic solvent is 80% by mass to 99.9% by mass relative to the total amount of the photocurable resin composition and the organic solvent, The viscosity of the solution is 1 mPa·sec～4 mPa·sec.

The resin composition for a light-shielding layer used in the manufacturing method of the 1st and 2nd display device board|substrates of this invention contains the said light-shielding component and a photocurable resin. The photocurable resin is not particularly limited as long as it is a resin that can be cured by light irradiation (for example, UV irradiation). From the viewpoint of excellent developability, an alkali-soluble photocurable resin is preferred Moreover, from the viewpoint of excellent photocurability and patterning properties, it is preferable to use the alkali-soluble resin containing polymerizable unsaturated groups described in Japanese Patent Laid-Open No. 2017-72760, that is, having two The reaction product of the above epoxy compound (more preferably an epoxy compound obtained by reacting bisphenols with epihalohydrin) and (meth)acrylic acid (referring to "acrylic acid and/or methacrylic acid") is further combined with The epoxy (meth)acrylate acid adduct obtained by reacting a polyvalent carboxylic acid or its anhydride is particularly preferably an epoxy acrylate acid adduct derived from a bisphenol compound.

In such a resin composition for a light-shielding layer, the content of the light-shielding component relative to the entire resin composition for a light-shielding layer is preferably 10% by mass to 90% by mass, more preferably 20% by mass to 80% by mass, Particularly preferably, it is 30% by mass to 70% by mass. Moreover, as the content of the photocurable resin, relative to the entire resin composition for the light-shielding layer, it is preferably 5.54% by mass to 90% by mass, more preferably 11.7% by mass to 80% by mass, and particularly preferably 17.8% by mass. ～70% by mass. If the content of the light-shielding component is less than the lower limit (or the content of the photocurable resin exceeds the upper limit), the light-shielding layer formed tends to decrease. On the other hand, if the light-shielding If the content of the component exceeds the upper limit (or the content of the photocurable resin is less than the lower limit), the surface smoothness of the formed light-shielding layer and the dispersion stability of the light-shielding component tend to decrease.

Furthermore, a photopolymerizable monomer may be contained in such a resin composition for light-shielding layers. Thereby, it is possible to rationalize the sensitivity at the time of light processing of the light-shielding layer, or rationalize the mechanical properties of the film such as the surface hardness of the light-shielding layer to be formed. As such a photopolymerizable monomer, a photopolymerizable monomer having at least one ethylenically unsaturated bond described in Japanese Patent Laid-Open No. 2017-72760 (for example, ( Meth)acrylates). The content of such a photopolymerizable monomer is preferably 1% by mass to 20% by mass, and more preferably 2% by mass to 15% by mass relative to the total amount of the photocurable resin and photopolymerizable monomer. , Particularly preferably 3% by mass to 10% by mass.

Furthermore, it is preferable to include a photopolymerization initiator in the resin composition for the light-shielding layer. Such a photopolymerization initiator is not particularly limited, and examples thereof include photopolymerization initiators described in JP 2017-72760 A. Among these, oxime ester-based polymerization initiators are particularly preferred. The content of such a photopolymerization initiator can be appropriately set according to the photocurability of the resin composition for the light-shielding layer. For example, it is preferably 0.3 with respect to 100 parts by mass of the total amount of the photocurable resin and the photopolymerizable monomer. Parts by mass to 30 parts by mass, more preferably 1 part by mass to 25 parts by mass.

Furthermore, when the heat resistance of the transparent substrate is low and the heat treatment (post-baking) after development is performed at a low temperature such as 150°C or lower, it is preferable that the resin composition for the light-shielding layer contains azo Department of polymerization initiator. Thereby, the thermal radical polymerizability of the resin composition for light-shielding layers at the time of heating (at the time of post-baking) after development improves. The azo polymerization initiator is not particularly limited, and examples thereof include azo polymerization initiators described in JP 2017-181976 A. The content of such an azo polymerization initiator is not particularly limited, and can be appropriately set according to the thermal radical polymerizability of the resin composition for the light-shielding layer and the like.

In addition, in the resin composition for the light-shielding layer, if necessary, a dispersant, the photopolymerization initiator, and polymerization initiators other than the azo-based polymerization initiator, chain transfer agents, sensitizers, and non-photosensitive agents may be prepared. Various additives such as resins, hardeners, hardening accelerators, antioxidants, plasticizers, fillers, coupling agents, surfactants, color-adjusting pigments, and dyes.

In addition, the resin composition for the light-shielding layer is preferably used in a solution state (that is, in the form of a solution of the resin composition for the light-shielding layer). Thereby, a uniform resin composition layer for a light-shielding layer can be formed. The organic solvent used in such a resin composition solution for a light-shielding layer is not particularly limited, and examples thereof include solvents described in JP 2017-72760 A. Regarding such an organic solvent, it is preferable to prepare the organic solvent so that the amount of the organic solvent becomes 60% to 90% by mass relative to the total amount of the resin composition for the light-shielding layer and the organic solvent, and it is more preferable to make the light-shielding The resin composition solution for a layer is prepared so that the solution viscosity (B-type or E-type viscometer) becomes 1 mPa·sec to 30 mPa·sec.

In the first method of manufacturing a substrate for a display device of the present invention, first, a layer including the first resin composition for an anti-reflection layer (hereinafter referred to as "the first anti-reflection layer") is formed on the transparent substrate. Resin composition layer for reflective layer").

The average thickness of the first resin composition layer for an anti-reflection layer is 0.01 μm to 1 μm. If the average thickness of the resin composition layer for the first anti-reflection layer is less than the lower limit, the surface roughness of the resin composition layer for the first anti-reflection layer tends to exceed the upper limit of the predetermined range. On the other hand, if the upper limit is exceeded, the surface roughness of the resin composition layer for the first anti-reflection layer tends to be less than the lower limit of the predetermined range. As the average thickness of the first resin composition layer for an anti-reflection layer, from the viewpoint that the surface roughness of the first resin composition layer for an anti-reflection layer easily falls within a predetermined range, it is preferably 0.02 μm to 0.5 μm, more preferably 0.04 μm to 0.3 μm. In addition, the average thickness of the resin composition layer for the first anti-reflection layer can be measured by using a stylus type step shape measuring device to measure the level difference between the surface of the first resin composition layer for the anti-reflection layer and the surface of the transparent substrate, and It is calculated by averaging them.

Furthermore, the surface roughness of the first resin composition layer for an anti-reflection layer is 40 nm to 200 nm. If the surface roughness of the first resin composition layer for an anti-reflection layer is less than the lower limit, the reflectance of the obtained light-shielding film cannot be sufficiently reduced, and the reflection of light on the light-shielding film cannot be sufficiently prevented. On the other hand, if the surface roughness of the first resin composition layer for an antireflection layer exceeds the upper limit, it is difficult to make the flatness of the obtained light shielding film to a desired level. As for the surface roughness of the resin composition layer for the first anti-reflection layer, the reflectance of the obtained light-shielding film becomes low, the reflection of light on the light-shielding film is suppressed, and the viewpoint of ensuring the flatness of the light-shielding film In particular, it is preferably 50 nm to 180 nm, and more preferably 80 nm to 160 nm. In addition, the surface roughness of the resin composition layer for the first anti-reflection layer can be determined by measuring the unevenness of the surface of the first resin composition layer for the anti-reflection layer using a stylus type step shape measuring device. The roughness curve was obtained, and the arithmetic average of the roughness was obtained for the 0.1 mm portion randomly extracted from the roughness curve, and this was used as the surface roughness of the first type of anti-reflection layer resin composition layer.

As a method of forming such a first resin composition layer for an anti-reflection layer, for example, after coating the first resin composition solution for an anti-reflection layer on the transparent substrate, heat treatment (pre-baking) Baking), thereby removing the organic solvent method.

Next, a layer including the resin composition for a light-shielding layer (hereinafter referred to as a "resin composition layer for a light-shielding layer") is formed on the first resin composition layer for an antireflection layer formed in this way. As a method of forming such a resin composition layer for a light-shielding layer, for example, after coating the resin composition solution for a light-shielding layer on the first resin composition layer for an anti-reflection layer, heat treatment (preliminary Baking), thereby removing the organic solvent.

As the method of applying the first resin composition solution for the anti-reflection layer and the method of applying the resin composition solution for the light-shielding layer, for example, in addition to the known solution dipping method and spray method, the use of a roll coater, a surface Coater, slit coater, spin coater, etc. The heating temperature and heating time in the pre-baking can be appropriately set according to the type of organic solvent used. For example, the heating temperature can be set to 60°C to 110°C (set not to exceed the heat-resistant temperature of the transparent substrate), and The heating time is set to 1 minute to 3 minutes.

Next, the first resin composition layer for the anti-reflection layer and the resin composition layer for the light-shielding layer formed in this way are exposed together using a mask for forming a desired light-shielding film pattern, so that the The photocurable transparent resin in the photosensitive part (exposure part) of the first resin composition layer for the antireflection layer and the photocurable resin in the photosensitive part (exposure part) of the resin composition layer for the light shielding layer are photocured. The exposure treatment conditions can be appropriately set according to the type of photocurable resin or photopolymerization initiator used, and the like.

Next, the first resin composition layer for the anti-reflection layer and the resin composition layer for the light-shielding layer after the exposure are collectively developed, and the first resin composition layer for the anti-reflection layer and the light-shielding layer are combined. By removing the resin composition of the unexposed part of the resin composition layer, an anti-reflection layer containing the inorganic filler and a transparent resin cured product (the first cured product of the resin composition for the anti-reflection layer) is simultaneously formed And a light-shielding layer containing the light-shielding component and a cured resin (cured material of the resin composition for the light-shielding layer). In addition, in order to sufficiently harden the anti-reflection layer and the light-shielding layer, or to sufficiently remove the developer to improve the adhesion between the transparent substrate and the anti-reflection layer, the anti-reflection layer and the light-shielding layer The layer is subjected to heat treatment (post-baking), whereby a substrate for a display device of the present invention having a light-shielding film (light-shielding film pattern) including the anti-reflection layer and the light-shielding layer on the transparent substrate can be obtained.

The development treatment method is not particularly limited, and a well-known development method can be adopted. The development treatment conditions can be appropriately set according to the types of the photocurable transparent resin and the photocurable resin used, and the like. Furthermore, when the photocurable transparent resin in the resin composition layer for the first antireflection layer and the photocurable resin in the resin composition layer for the light shielding layer are alkali-soluble, it is preferable to use an alkali The developing solution is used for development processing (alkali development processing). As the alkali developer, a known alkali developer such as an aqueous solution of carbonate or hydroxide of alkali metal or alkaline earth metal can be used.

In addition, the heating temperature and heating time in post-baking can be appropriately set according to the type of transparent substrate or resin composition used. For example, in the case of using a glass substrate with sufficient heat resistance as a transparent substrate, the heating temperature can be set It is 180°C to 250°C, and the heating time is set to 20 minutes to 60 minutes.

The average thickness of the light shielding layer formed in this way is 0.1 μm to 30 μm. If the average thickness of the light-shielding layer is less than the lower limit, the light-shielding property will decrease. On the other hand, if it exceeds the upper limit, the time required for the alkali development will become longer and productivity will decrease. The average thickness of such a light-shielding layer is preferably 0.5 μm to 20 μm, and more preferably 1 μm to 10 μm from the viewpoint of both light-shielding properties and productivity. In addition, the average thickness of the light-shielding layer can be obtained by measuring the level difference between the surface of the light-shielding layer and the surface of the transparent substrate using a stylus-type level difference shape measuring device, and averaging them to obtain the value including the anti-reflection The average thickness of the layer and the light-shielding film of the light-shielding layer is subtracted from the average thickness of the light-shielding film and the average thickness of the resin composition layer for the first antireflection layer.

Thus, in the first method of manufacturing a substrate for a display device of the present invention, a photocurable resin is used in either of the first resin composition for the anti-reflection layer and the resin composition for the light shielding layer. The first resin composition layer for the anti-reflection layer and the resin composition layer for the light-shielding layer can be exposed and developed together.

On the other hand, in the second method of manufacturing a substrate for a display device of the present invention, first, on the transparent substrate, the second resin composition for an anti-reflection layer is heat-cured to form The anti-reflection layer of the inorganic filler and the transparent resin cured product (the cured product of the second resin composition for the anti-reflection layer).

The average thickness of the anti-reflection layer is 0.01 μm to 1 μm. If the average thickness of the anti-reflection layer is less than the lower limit, the surface roughness of the anti-reflection layer tends to exceed the upper limit of the predetermined range. On the other hand, if it exceeds the upper limit, the anti-reflection layer is present. The surface roughness of the layer tends to be less than the lower limit of the predetermined range. The average thickness of such an anti-reflection layer is preferably from 0.02 μm to 0.5 μm, and more preferably from 0.04 μm to 0.3 μm from the viewpoint that the surface roughness of the anti-reflection layer is easily within a predetermined range. In addition, the average thickness of the anti-reflection layer can be obtained by measuring the step difference between the surface of the anti-reflection layer and the surface of the transparent substrate using a stylus type step shape measuring device, and averaging them.

Moreover, the surface roughness of the anti-reflection layer is 40 nm to 200 nm. If the surface roughness of the anti-reflection layer is less than the lower limit, the reflectance of the obtained light-shielding film cannot be sufficiently reduced, and the reflection of light on the light-shielding film cannot be sufficiently prevented. On the other hand, if the surface roughness of the anti-reflection layer exceeds the upper limit, it is difficult to make the flatness of the obtained light shielding film to a desired level. As for the surface roughness of such an anti-reflection layer, the reflectance of the obtained light-shielding film is further lowered, the reflection of light on the light-shielding film is further suppressed, and from the viewpoint of ensuring the flatness of the light-shielding film, it is preferable It is 50 nm to 180 nm, more preferably 80 nm to 160 nm. In addition, the surface roughness of the anti-reflection layer can be determined as follows: use a stylus-type step shape measuring device to measure the unevenness of the surface of the anti-reflection layer to obtain a roughness curve, and the roughness curve is arbitrarily extracted from 0.1 In the part of mm, the arithmetic mean of the roughness was calculated, and this was used as the surface roughness of the anti-reflection layer.

As a method of forming such an anti-reflection layer, for example, after coating the second resin composition solution for the anti-reflection layer on the transparent substrate, applying the second resin composition for the anti-reflection layer The method of heat hardening treatment.

As a method of applying the second resin composition solution for the anti-reflection layer, for example, in addition to the well-known solution dipping method and spray method, the use of a roll coater, a top coater, a slit coater, and a spin coater can be used. And other methods.

In addition, the heat curing conditions can be appropriately set according to the type of transparent substrate used or the second type of resin composition for anti-reflection layer. For example, in the case of using a glass substrate or the like with sufficient heat resistance as a transparent substrate, the heating temperature can be set Set to 180°C to 250°C, and set the heating time to 20 minutes to 60 minutes.

Next, a layer including the resin composition for a light-shielding layer (hereinafter referred to as a “resin composition layer for a light-shielding layer”) is formed on the antireflection layer formed in this way. As a method of forming such a resin composition layer for a light-shielding layer, for example, after coating the resin composition solution for a light-shielding layer on the second resin composition layer for an anti-reflection layer, heat treatment (preliminary Baking), thereby removing the organic solvent.

As a method of coating the resin composition solution for a light-shielding layer, in addition to a well-known solution dipping method, spray method, the method using a roll coater, a top coater, a slit coater, a spin coater, etc. can be mentioned, for example. The heating temperature and heating time in the pre-baking can be appropriately set according to the type of organic solvent used. For example, the heating temperature can be set to 60°C to 110°C (set not to exceed the heat-resistant temperature of the transparent substrate), and The heating time is set to 1 minute to 3 minutes.

Next, the resin composition layer for the light-shielding layer formed in this way is subjected to exposure treatment using a mask for forming a desired light-shielding film pattern, so that the light-sensitive part (exposure part) of the resin composition layer for the light-shielding layer is exposed to light. The curable resin is light-cured. The exposure treatment conditions can be appropriately set according to the type of photocurable resin or photopolymerization initiator used, and the like.

Next, the exposed resin composition layer for the light-shielding layer is subjected to development processing to remove the resin composition in the unexposed part of the resin composition layer for the light-shielding layer, thereby forming the light-shielding component and the cured resin ( The light-shielding layer is a cured product of the resin composition for the light-shielding layer. In addition, in order to fully harden the light-shielding layer or sufficiently remove the developer, heat treatment (post-baking) is performed on the light-shielding layer, thereby obtaining a transparent substrate including the anti-reflection layer and The light-shielding film (light-shielding film pattern) of the light-shielding layer is the substrate for a display device of the present invention.

The development treatment method is not particularly limited, and a known development method can be adopted, and the development treatment conditions can be appropriately set according to the kind of photocurable resin used and the like. Furthermore, when the photocurable resin in the resin composition layer for a light shielding layer is alkali-soluble, it is preferable to perform development processing (alkali development processing) using an alkali developer. As the alkali developer, a known alkali developer such as an aqueous solution of carbonate or hydroxide of alkali metal or alkaline earth metal can be used.

In addition, the heating temperature and heating time in post-baking can be appropriately set according to the type of transparent substrate or resin composition used.

The average thickness of the light shielding layer formed in this way is 0.1 μm to 30 μm. If the average thickness of the light-shielding layer is less than the lower limit, the light-shielding property will decrease. On the other hand, if it exceeds the upper limit, the time required for the alkali development will become longer and productivity will decrease. The average thickness of such a light-shielding layer is preferably 0.5 μm to 20 μm, and more preferably 1 μm to 10 μm from the viewpoint of both light-shielding properties and productivity. In addition, the average thickness of the light-shielding layer can be obtained by measuring the level difference between the surface of the light-shielding layer and the surface of the transparent substrate using a stylus-type level difference shape measuring device, and averaging them to obtain the value including the anti-reflection Layer and the average thickness of the light-shielding film of the light-shielding layer, and subtract the average thickness of the anti-reflection layer from the average thickness of the light-shielding film. [Example]

Hereinafter, the present invention will be described more specifically based on examples and comparative examples, but the present invention is not limited to the following examples. In addition, the average particle size of the inorganic filler and light-shielding component used in the examples and comparative examples, the average thickness of the anti-reflection layer (or the resin composition layer for the anti-reflection layer) and the light-shielding layer, and the anti-reflection layer (or anti-reflection layer) The surface roughness of the resin composition layer) is measured by the following method.

＜Measurement of average particle size of inorganic fillers and light-shielding components＞ The particles of the inorganic filler or the light-shielding component are dispersed in the organic solvent used in the resin composition solution so that the particle concentration becomes 0.1% by mass to 0.5% by mass. The particle size distribution of the particles in the obtained dispersion was measured by the dynamic light scattering method using a particle size distribution meter ("particle size analyzer FPAR-1000" manufactured by Otsuka Electronics Co., Ltd.) and by the cumulant method The obtained particle size distribution is analyzed to find the average particle size (average secondary particle size).

<Measurement of the average thickness of the anti-reflection layer (or the resin composition layer for the anti-reflection layer)> Using a stylus type step shape measuring device ("P-10" manufactured by KLA-Tencor), under the conditions of a measuring range of 500 μm, a scanning speed of 50 μm/sec, and a sampling rate of 20 Hz Measure the level difference between the surface of the glass substrate and the surface of the anti-reflection layer (or the surface of the resin composition layer for the anti-reflection layer), and use the average value as the average thickness of the anti-reflection layer (or the resin composition layer for the anti-reflection layer).

<Measurement of the average thickness of the light-shielding layer> Using a stylus-type step shape measuring device ("P-10" manufactured by KLA-Tencor), the glass was measured under the conditions of a measuring range of 500 μm, a scanning speed of 50 μm/sec, and a sampling rate of 20 Hz. The average value of the level difference between the surface of the substrate and the surface of the light-shielding layer is taken as the average thickness of the light-shielding film including the anti-reflection layer and the light-shielding layer. The average thickness of the anti-reflection layer (or the resin composition layer for the anti-reflection layer) is subtracted from the average thickness of the light-shielding film to obtain the average thickness of the light-shielding layer (=average thickness of the light-shielding film-anti-reflection The average thickness of the layer (or the resin composition layer for the anti-reflection layer)).

＜Measurement of surface roughness of anti-reflection layer (or resin composition layer for anti-reflection layer)＞ Using a stylus-type step shape measuring device (“P-10” manufactured by KLA-Tencor), the measurement range is 500 μm, scanning speed 10 μm/sec, and sampling rate 100 Hz. Calculate the roughness curve of the irregularities on the surface of the reflective layer (or the surface of the resin composition layer for the anti-reflection layer), and calculate the arithmetic average of the roughness for a portion of the roughness curve that is randomly extracted with a length of 0.1 mm. As the surface roughness of the anti-reflection layer (or the resin composition layer for the anti-reflection layer). The results are shown in Table 1.

In addition, the alkali-soluble photocurable transparent resin used in Examples and Comparative Examples was synthesized by the following method. In addition, the raw materials used in the synthesis examples are shown below. BPFE: Bisphenol sulfide type epoxy compound (9,9-bis(4-hydroxyphenyl) sulfide and Chloromethyloxirane (Chloromethyloxirane) reaction product (epoxy equivalent: 250 g/eq)). AA: Acrylic. PGMEA: Propylene glycol monomethyl ether acetate. TEAB: Tetraethylammonium bromide. BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride. THPA: Tetrahydrophthalic anhydride. BzMA: Benzyl methacrylate. DCPMA: Dicyclopentyl methacrylate. GMA: Glycidyl methacrylate. St: Styrene. AIBN: Azobisisobutyronitrile. TDMAMP: Tris-dimethylaminomethylphenol. HQ: Hydroquinone. TEA: Triethylamine.

(Synthesis example 1) BPFE (114.4 g (0.23 mol)), AA (33.2 g (0.46 mol)), PGMEA (157 g) and TEAB (0.48 g) were put into a four-necked flask with reflux cooler (capacity 500 ml) ), stirring at 100°C to 105°C for 20 hours to react. Then, BPDA (35.3 g (0.12 mol)) and THPA (18.3 g (0.12 mol)) were added to the reaction product in the flask, and stirred at 120°C to 125°C for 6 hours to obtain photocurable A resin solution of cardo resin. The solid content concentration of this resin solution was 56.1% by mass, the acid value (in terms of solid content) was 103 mgKOH/g, and the Mw in the GPC analysis was 3,600.

(Synthesis example 2) PGMEA (300 g) was placed in a four-necked flask (volume 1 L) equipped with a reflux cooler, the gas phase in the flask was replaced with nitrogen, and then the temperature was raised to 120°C. It took 2 hours to drop the monomer mixture (in BzMA (35.2 g (0.20 mol)), DCPMA (77.1 g (0.35 mol)), GMA (49.8 g (0.35 mol)) into the flask from the dropping funnel for 2 hours. A mixed solution obtained by dissolving AIBN (10 g) in a liquid mixture of St (10.4 g (0.10 mol)) and St (10.4 g (0.10 mol)), followed by stirring at 120°C for 2 hours to obtain a copolymer solution.

Then, the gas phase in the flask system was replaced with air, and then AA (24.0 g (95% of glycidyl group)), TDMAMP (0.8 g) and HQ (0.15) were added to the copolymer solution in the flask. g) Stir at 120°C for 6 hours to obtain a copolymer solution containing a polymerizable unsaturated group.

In addition, THPA (45.7 g (90% of the molar number of AA)) and TEA (0.5 g) were added to the copolymer solution containing polymerizable unsaturated groups, and reacted at 120°C for 4 hours to obtain a photocurable solution. Resin solution of acrylic resin. The solid content concentration of this resin solution was 46% by mass, the acid value (in terms of solid content) was 68 mgKOH/g, and the Mw in the GPC analysis was 7900.

In addition, the other components used in the examples and comparative examples are shown below. (Thermosetting transparent resin) Epoxy resin: 1,2-epoxy-4-(2-oxocyclopropyl) cyclohexane adduct of 2,2-bis(hydroxymethyl)-1-butanol (Daicel Organic Synthesis "EHPE3150" manufactured by daicel corporation organic chemical products company). (Photopolymerizable monomer) DPHA: A mixture of dipentaerythritol hexaacrylate and dipentaerythritol pentaacrylate ("DPHA" manufactured by Nippon Kayaku Co., Ltd.). (hardener) TMA: trimellitic acid. (Polymerization initiator) OXE02: ethyl ketone, 1-[9-ethyl-6-(2-methylbenzyl)-9H-oxazol-3-yl]-,1-(O-acetyloxime) (BASF ( BASF) "Irgacure OXE02" manufactured by Japan Co., Ltd.). (Inorganic filler) Silicon dioxide A: vapor phase silicon dioxide ("Aerosil" manufactured by Japan Aerosil Co., Ltd.), refractive index: 1.46, average particle size (distribution measurement: dynamic light scattering) Method, distribution analysis: cumulant method): 170 nm. Silica B: Organic silica sol ("PMA-ST" manufactured by Nissan Chemical Co., Ltd.), refractive index: 1.46, average particle size (distribution measurement: dynamic light scattering method, distribution analysis: cumulant method): 20 nm. (Shading component) Carbon black: carbon black ("MA14" manufactured by Mitsubishi Chemical Co., Ltd.), average particle size (distribution measurement: dynamic light scattering method, distribution analysis: cumulant method): 150 nm. (Organic solvent) PGMEA: Propylene glycol monomethyl ether acetate.

(Example 1) First, the resin solution containing the photocurable cardo resin obtained in Synthesis Example 1, silicon dioxide A, and PGMEA were mixed so that each component has the content shown in Table 1, to prepare a resin composition for an anti-reflection layer物solution. Furthermore, the resin solution containing the photocurable cardo resin obtained in Synthesis Example 1, DPHA, carbon black, OXE02, and PGMEA were mixed so that each component had the content shown in Table 1, to prepare a resin for a light-shielding layer Composition solution.

Next, apply the resin composition solution for the anti-reflection layer on the glass substrate using a spin coater, and heat it at 90°C (pre-baked) for 1 minute using a hot plate to form the resin for the anti-reflection layer with an average thickness of 80 nm Composition layer. The surface roughness of the resin composition layer for the anti-reflection layer was 75 nm.

On the resin composition layer for the anti-reflection layer, the resin composition solution for the light-shielding layer was coated using a spin coater, and heated (pre-baked) at 90°C for 1 minute using a hot plate to form the resin composition for the light-shielding layer Floor.

On the thus formed laminated coating film including the resin composition layer for the anti-reflection layer and the resin composition layer for the light shielding layer, the exposure gap was adjusted to 100 μm, and the coverage line width (line)/space (space)=20 μm/ The mask for forming a pattern of a 20 μm light-shielding film uses an ultra-high pressure mercury lamp ^{with an i-ray intensity of 30 mW/cm 2 to irradiate 50 mJ/cm 2} of ultraviolet rays and simultaneously expose to light-harden the resin in the photosensitive part. On the exposed laminated film, use 0.04% potassium hydroxide aqueous solution ^{to start spray development under the conditions of 24°C and 1 kgf/cm 2} pressure. After the pattern begins to appear, continue spray development for another 20 seconds . Thereafter, spray water washing was performed under a pressure of 5 kgf/cm ^{2 to} remove unexposed parts of the laminated coating film, and a light-shielding film pattern in which an anti-reflection layer pattern and a light-shielding layer pattern were sequentially laminated was formed on the glass substrate. After that, heat treatment (post-baking) was performed for this light-shielding film pattern at 230° C. for 30 minutes using a hot air dryer. In addition, the average thickness of the light shielding layer pattern was 1.3 μm.

(Example 2 to Example 3) In the resin composition solution for the anti-reflective layer, the resin solution of the photocurable cardo resin obtained in Synthesis Example 1 and the blending of silicon dioxide A were changed so that each component had the content shown in Table 1. Except for the amount, in the same manner as in Example 1, a light-shielding film pattern in which an anti-reflection layer pattern and a light-shielding layer pattern were sequentially laminated was formed on a glass substrate. In addition, the surface roughness of the resin composition layer for the anti-reflection layer obtained in Example 2 was 98 nm, and the surface roughness of the resin composition layer for the anti-reflection layer obtained in Example 3 was 142 nm.

(Example 4) Except for forming a resin composition layer for an anti-reflection layer with an average thickness of 40 nm, in the same manner as in Example 3, a light-shielding film pattern in which an anti-reflection layer pattern and a light-shielding layer pattern were sequentially laminated was formed on a glass substrate. In addition, the surface roughness of the resin composition layer for an anti-reflection layer obtained in Example 4 was 150 nm.

(Example 5) Except for forming the resin composition layer for an anti-reflection layer with an average thickness of 200 nm, in the same manner as in Example 3, a light-shielding film pattern in which an anti-reflection layer pattern and a light-shielding layer pattern were sequentially laminated was formed on a glass substrate. In addition, the surface roughness of the resin composition layer for an anti-reflection layer obtained in Example 5 was 50 nm.

(Example 6) In the resin composition solution for the anti-reflection layer, the resin solution of the photocurable acrylic resin obtained in Synthesis Example 2 was used instead of the resin solution of the photocurable cardo resin obtained in Synthesis Example 1. In addition, In the same manner as in Example 3, a light-shielding film pattern in which an anti-reflection layer pattern and a light-shielding layer pattern were sequentially laminated was formed on a glass substrate. In addition, the surface roughness of the resin composition layer for an anti-reflection layer obtained in Example 6 was 131 nm.

(Example 7) First, the resin solution of photocurable cardo resin obtained in Synthesis Example 1, epoxy resin, TMA, silicon dioxide A, and PGMEA were mixed so that each component has the content shown in Table 1 to prepare a protective layer. Resin composition solution for reflective layer. Furthermore, in the same manner as in Example 1, a resin composition solution for a light-shielding layer was prepared.

Next, a spin coater was used to coat the resin composition solution for an anti-reflection layer on the glass substrate, and then a hot-air dryer was used to heat and cure at 230°C for 30 minutes to form an anti-reflection layer with an average thickness of 80 nm. The surface roughness of this anti-reflection layer was 65 nm.

On the anti-reflection layer, the resin composition solution for the light-shielding layer was applied using a spin coater, and heated (pre-baked) at 90° C. for 1 minute using a hot plate to form a resin composition layer for the light-shielding layer.

On the resin composition layer for the light-shielding layer formed in this way, the exposure gap was adjusted to 100 μm, and the mask for forming the light-shielding film pattern covering line width/space=20 μm/20 μm was used, and the i-ray intensity was 30 mW/cm ² The ultra-high-pressure mercury lamp is irradiated with 50 mJ/cm ² of ultraviolet rays and exposed to light harden the resin in the photosensitive part. On the resin composition layer for the light-shielding layer after exposure, use a 0.04% potassium hydroxide aqueous solution ^{to start spray development under the conditions of 24°C and 1 kgf/cm 2} pressure. After the pattern begins to appear, continue for another 20 seconds The spray developing. Thereafter, spray water washing was performed under a pressure of 5 kgf/cm ^{2 to} remove the unexposed part of the resin composition layer for the light-shielding layer, and the light-shielding film pattern in which the anti-reflection layer and the light-shielding layer pattern were sequentially laminated was formed on the glass substrate. After that, heat treatment (post-baking) was performed for this light-shielding film pattern at 230° C. for 30 minutes using a hot air dryer. In addition, the average thickness of the light shielding layer pattern was 1.3 μm.

(Example 8) In the resin composition solution for the anti-reflection layer, epoxy resin, TMA, silicon dioxide A, and PGMEA were mixed so that each component had the content shown in Table 1, and the same as in Example 7 except that In the method, a light-shielding film pattern in which an anti-reflection layer and a light-shielding layer pattern are sequentially laminated is formed on a glass substrate. In addition, the surface roughness of the anti-reflection layer obtained in Example 8 was 70 nm.

(Comparative example 1) Except that the anti-reflection layer was not formed, in the same manner as in Example 1, a light-shielding film pattern including only the light-shielding layer pattern was formed on the glass substrate.

(Comparative example 2) In the resin composition solution for the anti-reflection layer, the resin solution of the photocurable cardo resin obtained in Synthesis Example 1 and PGMEA were mixed so that the respective components have the contents shown in Table 1. Otherwise, In the same manner as in Example 1, a light-shielding film pattern in which an anti-reflection layer pattern and a light-shielding layer pattern were sequentially laminated was formed on a glass substrate. In addition, the surface roughness of the resin composition layer for an anti-reflection layer obtained in Comparative Example 2 was 11 nm.

(Comparative example 3) Except that silicon dioxide B with an average particle size of 20 nm was used instead of silicon dioxide A with an average particle size of 170 nm, in the same manner as in Example 3, a light-shielding layer in which an anti-reflection layer pattern and a light-shielding layer pattern were sequentially laminated The film pattern is formed on the glass substrate. In addition, the surface roughness of the resin composition layer for an anti-reflection layer obtained in Comparative Example 3 was 30 nm.

<Measurement of shading degree (optical density (OD) value)> For the obtained glass substrate with a light-shielding film pattern, the optical density (OD value) was measured using an optical densitometer ("X-Rite361T (V)" manufactured by SAKATA INX ENG.CO., LTD) ), which is corrected by the optical density (OD value) of the glass substrate to obtain the light-shielding degree (OD value) of the light-shielding film. The results are shown in Table 1.

＜Measurement of reflectance＞ From the obtained glass substrate with a light-shielding film pattern on the side where the light-shielding film pattern is not formed, a spectrophotometer ("UH4150" manufactured by Hitachi High Tech Science Co., Ltd.) was used in the C light source, The reflectance [%] was measured under the condition of a 2° field of view. The results are shown in Table 1.

[Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Comparative example 1 Comparative example 2 Comparative example 3 Composition of anti-reflection layer Cardo resin [Mass parts] 15 10 5 5 5 --- 2 --- --- 20 5 Acrylic [Mass parts] --- --- --- --- --- 5 --- --- --- --- --- Epoxy resin [Mass parts] --- --- --- --- --- --- 2 4 --- --- --- TMA [Mass parts] --- --- --- --- --- --- 1 2 --- --- --- Silica A [Mass parts] 5 10 15 15 15 15 15 15 --- --- --- Silica B [Mass parts] --- --- --- --- --- --- --- --- --- --- 15 PGMEA [Mass parts] 80 80 80 80 80 80 80 79 --- 80 80 total [Mass parts] 100 100 100 100 100 100 100 100 --- 100 100 The composition of the light-shielding layer Cardo resin [Mass parts] 5 5 5 5 5 5 5 5 5 5 5 DPHA [Mass parts] 2 2 2 2 2 2 2 2 2 2 2 Carbon black [Mass parts] 8 8 8 8 8 8 8 8 8 8 8 OXE02 [Mass parts] 1 1 1 1 1 1 1 1 1 1 1 PGMEA [Mass parts] 84 84 84 84 84 84 84 84 84 84 84 total [Mass parts] 100 100 100 100 100 100 100 100 100 100 100 Simultaneous processing of exposure and development can can can can can can Can't Can't --- can can Inorganic filler Refractive index [-] 1.46 1.46 1.46 1.46 1.46 1.46 1.46 1.46 --- --- 1.46 The average particle size [nm] 170 170 170 170 170 170 170 170 --- --- 20 Anti-reflection layer The average thickness [nm] 80 80 80 40 200 80 80 80 --- 80 80 Surface roughness [nm] 75 98 142 150 50 131 65 70 --- 11 30 Shading layer The average thickness [μm] 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 Shading film Shading degree (OD value) [/μm] 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 Reflectivity [%] 5.0 4.8 4.6 4.5 5.0 4.5 4.6 4.6 6.0 6.0 6.0

As shown in Table 1, it was confirmed that the light-shielding film pattern (Example 1 to Example 6) including the anti-reflection layer formed by curing the resin composition layer for the anti-reflection layer having a specific surface roughness and A light-shielding film pattern including an anti-reflection layer with a specific surface roughness (Example 7 to Example 8) and a light-shielding film pattern without an anti-reflection layer (Comparative Example 1), and a light-shielding film that does not contain inorganic fillers in the anti-reflection layer Compared with the pattern (Comparative Example 2) and the light-shielding film pattern (Comparative Example 3) including the anti-reflection layer formed by curing the resin composition layer for the anti-reflection layer with a small surface roughness, the reflectance was lowered. [Industrial availability]

As described above, according to the present invention, it is possible to obtain a light-shielding film in which the reflection of light is sufficiently suppressed. Therefore, since the substrate for a display device of the present invention has a light-shielding film in which light reflection is sufficiently suppressed, it is used in display devices such as liquid crystal displays, touch panels, organic electro-luminescence (electro-luminescence) EL displays, and quantum dot displays. The substrate used is useful.

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Claims (9)

A substrate for a display device, which is characterized by comprising: Transparent substrate; and A light-shielding film comprising: an anti-reflection layer arranged on the transparent substrate and containing an inorganic filler with a refractive index of 1.2 to 1.8 and a cured transparent resin with an average thickness of 0.01 μm to 1 μm; and an anti-reflection layer arranged on the transparent substrate; The anti-reflection layer contains at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and color-mixed pseudo-black pigments, and a light-shielding layer with an average thickness of a resin cured product of 0.1 μm-30 μm, and The surface roughness of the anti-reflection layer at the interface between the anti-reflection layer and the light shielding layer is 40 nm to 200 nm. The substrate for a display device according to the first item of the scope of patent application, wherein the average particle diameter of the inorganic filler is 25 nm to 300 nm. The substrate for a display device according to the scope of patent application 1 or 2, wherein the content of the inorganic filler is 5 mass% to 95 mass% with respect to the entire anti-reflection layer. A method for manufacturing a substrate for a display device. The substrate for a display device includes a transparent substrate and a light-shielding film including an anti-reflection layer and a light-shielding layer disposed on the transparent substrate. The method for manufacturing the substrate for a display device is characterized by ,include: On the transparent substrate, a resin composition for an anti-reflection layer containing an inorganic filler with a refractive index of 1.2 to 1.8 and a photocurable transparent resin, an average thickness of 0.01 μm to 1 μm, and a surface roughness of 40 nm to 200 nm is formed Physical layer steps; On the resin composition layer for the anti-reflection layer, a resin for a light-shielding layer containing at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and mixed-color pseudo-black pigments and a photocurable resin is formed The steps of the composition layer; and The resin composition layer for the anti-reflection layer and the resin composition layer for the light-shielding layer are exposed together, and then developed together and post-baked to form the inorganic filler and the transparent resin. A step of an anti-reflection layer of a cured product and a light-shielding layer containing the light-shielding component and the cured resin and having an average thickness of 0.1 μm to 30 μm. The method of manufacturing a substrate for a display device as described in claim 4, wherein the photocurable transparent resin in the resin composition layer for the anti-reflection layer and the photocurable resin in the resin composition layer for the light shielding layer All resins are alkali-soluble, and the development treatment is alkali development treatment. A method for manufacturing a substrate for a display device. The substrate for a display device includes a transparent substrate and a light-shielding film including an anti-reflection layer and a light-shielding layer disposed on the transparent substrate. The method for manufacturing the substrate for a display device is characterized by ,include: On the transparent substrate, a resin composition for an anti-reflection layer containing at least one of an inorganic filler with a refractive index of 1.2 to 1.8, a thermosetting transparent resin, and a thermosetting monomer is heat-cured to form an average thickness The step of an anti-reflection layer with a surface roughness of from 0.01 μm to 1 μm and a surface roughness of from 40 nm to 200 nm; and On the anti-reflection layer, a resin composition for a light-shielding layer containing at least one light-shielding component selected from the group consisting of organic black pigments, inorganic black pigments, and mixed-color pseudo-black pigments and a photocurable resin is subjected to exposure treatment After that, a development process is performed and post-baking is performed to form a step of forming a light-shielding layer with an average thickness of 0.1 μm to 30 μm. The method for manufacturing a substrate for a display device as described in claim 6, wherein the photocurable resin in the resin composition layer for the light-shielding layer is alkali-soluble, and the development treatment is an alkali development treatment. A resin composition solution for an anti-reflection layer, which is a photocurable resin composition capable of forming a resin composition layer for an anti-reflection layer with an average thickness of 0.01 μm to 1 μm and a surface roughness of 40 nm to 200 nm, and A resin composition solution of an organic solvent, and is characterized in that: The photocurable resin composition contains: 5% to 95% by mass relative to the entire resin composition, a refractive index of 1.2 to 1.8, an average particle diameter of 25 nm to 300 nm, and can be dispersed in the organic solvent Inorganic filler; relative to the entire resin composition, 1.54% to 95% by mass of the photocurable transparent resin; relative to the total amount of the photocurable transparent resin and the photopolymerizable monomer, it is 0 Mass% to 50% by mass of the photopolymerizable monomer; and 0 to 30 parts by mass of photopolymerization initiation relative to 100 parts by mass of the total amount of the photocurable transparent resin and the photopolymerizable monomer Agent, and The content of the organic solvent is 80% by mass to 99.9% by mass relative to the total amount of the photocurable resin composition and the organic solvent, The viscosity of the solution is 1 mPa·sec～4 mPa·sec. A resin composition solution for an anti-reflection layer, which is a resin composition containing a thermosetting resin composition capable of forming an anti-reflection layer with an average thickness of 0.01 μm to 1 μm and a surface roughness of 40 nm to 200 nm and an organic solvent Substance solution, and is characterized by, The thermosetting resin composition contains: 5% to 95% by mass relative to the entire resin composition, a refractive index of 1.2 to 1.8, an average particle size of 25 nm to 300 nm, and can be dispersed in the organic solvent Inorganic filler in the resin composition; at least one of a thermosetting transparent resin and a thermosetting monomer of 3.2% to 94.06% by mass relative to the entire resin composition; and relative to the thermosetting transparent resin and the The total amount of the thermosetting monomer is 100 parts by mass, which is 1 part by mass to 25 parts by mass of the thermosetting agent, and The content of the organic solvent is 80% by mass to 99.9% by mass relative to the total amount of the resin composition for the antireflection layer and the organic solvent, The viscosity of the solution is 1 mPa·sec～4 mPa·sec.