TW202103934A - Laminate, method for manufacturing printed circuit board, printed circuit board, and antenna - Google Patents

Laminate, method for manufacturing printed circuit board, printed circuit board, and antenna Download PDF

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TW202103934A
TW202103934A TW109112147A TW109112147A TW202103934A TW 202103934 A TW202103934 A TW 202103934A TW 109112147 A TW109112147 A TW 109112147A TW 109112147 A TW109112147 A TW 109112147A TW 202103934 A TW202103934 A TW 202103934A
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Taiwan
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layer
laminate
metal foil
printed circuit
less
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TW109112147A
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Chinese (zh)
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笠井渉
細田朋也
山邊敦美
寺田達也
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日商Agc股份有限公司
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Publication of TW202103934A publication Critical patent/TW202103934A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/082Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising vinyl resins; comprising acrylic resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/304Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/34Layered products comprising a layer of synthetic resin comprising polyamides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention provides a laminate (metal clad laminate) which comprises a dielectric layer that has a low water absorption rate and excellent dielectric characteristics, heat resistance, and adhesion, and a metal foil layer, and which has excellent properties as materials or the like of printed circuit boards such as flexible printed circuit boards and rigid printed circuit boards. The laminate has at least a three-layer structure and includes the metal foil layer, a non-thermoplastic polyimide layer P, and a tetrafluoroethylene polymer layer F, at least one of the outermost layers being the metal foil layer. The layer F is present on at least one surface of the layer P. The layer P has a water absorption rate of less than 1.5%, and the absolute value of the coefficient of linear expansion thereof is 25 ppm/DEG C or less.

Description

積層體、印刷基板之製造方法、印刷基板及天線Laminated body, manufacturing method of printed circuit board, printed circuit board and antenna

本發明係關於一種積層體、印刷基板之製造方法、印刷基板及天線。The present invention relates to a laminated body, a manufacturing method of a printed circuit board, a printed circuit board and an antenna.

伴隨資訊通信社會之發展,資料傳送量增加。其結果為,資訊傳遞所使用之電波之頻率不斷上升。使電氣信號通過之傳輸路徑例如使用印刷基板。若使高頻電氣信號於該傳輸路徑通過,則頻率越高,則其劣化(損失)越大。 印刷基板所使用之介電體材料中,為了降低電氣信號之損失,要求低介電常數、低介電損耗正切及低吸水率之特性。作為上述介電體材料,可列舉四氟乙烯系聚合物。但是,若使用四氟乙烯系聚合物,則印刷基板之尺寸穩定性與機械性強度易下降。提出非熱塑性聚醯亞胺作為上述四氟乙烯系聚合物之替代品(參照專利文獻1~3)。 先前技術文獻 專利文獻With the development of the information and communication society, the amount of data transmission has increased. As a result, the frequency of radio waves used for information transmission continues to rise. The transmission path through which the electric signal passes is, for example, a printed circuit board. If a high-frequency electrical signal is passed through this transmission path, the higher the frequency, the greater its degradation (loss). In order to reduce the loss of electrical signals, the dielectric materials used in the printed circuit board require the characteristics of low dielectric constant, low dielectric loss tangent, and low water absorption. Examples of the above-mentioned dielectric material include tetrafluoroethylene-based polymers. However, if a tetrafluoroethylene-based polymer is used, the dimensional stability and mechanical strength of the printed circuit board tend to decrease. A non-thermoplastic polyimide is proposed as an alternative to the above-mentioned tetrafluoroethylene-based polymer (see Patent Documents 1 to 3). Prior art literature Patent literature

專利文獻1:國際公開第2016/159060號 專利文獻2:國際公開第2018/061727號 專利文獻3:日本專利特開2018-150544號Patent Document 1: International Publication No. 2016/159060 Patent Document 2: International Publication No. 2018/061727 Patent Document 3: Japanese Patent Laid-Open No. 2018-150544

[發明所欲解決之問題][The problem to be solved by the invention]

由以非熱塑性聚醯亞胺作為介電體層之積層體所形成之印刷基板因其分子骨架上之特徵,故介電特性優異。但是,本發明人等首先瞭解到以下方面:上述印刷基板之介電特性因非熱塑性聚醯亞胺之吸水性依然不穩定。 又,本發明者人等亦瞭解到以下方面:根據上述特徵,非熱塑性聚醯亞胺之耐熱性尚不充分,若將上述積層體供於作為印刷基板之安裝步驟之浮焊步驟,則介電體層易剝離或膨脹,難以有效率地製造印刷基板。 本發明之目的在於提供一種積層體(覆金屬箔積層體),其具有介電體層與金屬箔層,該介電體層係使非熱塑性聚醯亞胺與四氟乙烯系聚合物複合化而成,且介電特性、耐熱性及密接性優異,吸水率較低。又,本發明之目的在於提供一種上述物性優異且傳輸損失得到降低之印刷基板及其製造方法、以及天線。 [解決問題之技術手段]The printed circuit board formed by the laminate with non-thermoplastic polyimide as the dielectric layer has excellent dielectric properties due to the characteristics on the molecular skeleton. However, the inventors of the present invention first learned the following: the dielectric properties of the above-mentioned printed circuit board are still unstable due to the water absorption of non-thermoplastic polyimide. In addition, the inventors of the present invention have also understood the following: According to the above-mentioned characteristics, the heat resistance of non-thermoplastic polyimide is not yet sufficient. If the above-mentioned laminate is used for the float soldering step as the mounting step of the printed circuit board, the The electrical body layer is easy to peel off or swell, and it is difficult to efficiently manufacture a printed circuit board. The object of the present invention is to provide a laminate (metal foil-clad laminate), which has a dielectric layer and a metal foil layer, the dielectric layer is a composite of non-thermoplastic polyimide and tetrafluoroethylene polymer , And excellent dielectric properties, heat resistance and adhesion, and low water absorption. In addition, an object of the present invention is to provide a printed circuit board with excellent physical properties and reduced transmission loss, a manufacturing method thereof, and an antenna. [Technical means to solve the problem]

本發明具有下述態樣。 [1]一種積層體,其係具有金屬箔層、非熱塑性聚醯亞胺之層P、及四氟乙烯系聚合物之層F,且最外層之至少一層為金屬箔層的至少3層結構者,且於上述層P之至少一面存在上述層F,上述層P之吸水率未達1.5%,且線膨脹係數之絕對值為25 ppm/℃以下。 [2]如[1]所記載之積層體,其係於上述層P之兩面分別存在上述層F之至少4層結構之積層體。 [3]如[1]或[2]所記載之積層體,其中上述金屬箔層之表面之均方根粗糙度為0.25 μm以上。 [4]如[1]至[3]中任一項所記載之積層體,其中上述金屬箔層之厚度為2~30 μm。 [5]如[1]至[4]中任一項所記載之積層體,其中上述非熱塑性聚醯亞胺係玻璃轉移溫度為280℃以上者。The present invention has the following aspects. [1] A laminate having a metal foil layer, a non-thermoplastic polyimide layer P, and a tetrafluoroethylene polymer layer F, and at least a three-layer structure in which at least one of the outermost layers is a metal foil layer Moreover, the layer F is present on at least one side of the layer P, the water absorption rate of the layer P is less than 1.5%, and the absolute value of the linear expansion coefficient is 25 ppm/°C or less. [2] The layered body as described in [1], which is a layered body having a structure of at least four layers in which the layer F is present on both sides of the layer P, respectively. [3] The laminate as described in [1] or [2], wherein the root mean square roughness of the surface of the metal foil layer is 0.25 μm or more. [4] The laminate according to any one of [1] to [3], wherein the thickness of the metal foil layer is 2 to 30 μm. [5] The laminate according to any one of [1] to [4], wherein the non-thermoplastic polyimide-based glass transition temperature is 280°C or higher.

[6]如[1]至[5]中任一項所記載之積層體,其中上述非熱塑性聚醯亞胺係於320℃下之拉伸彈性模數為0.2 GPa以上者。 [7]如[1]至[6]中任一項所記載之積層體,其中上述非熱塑性聚醯亞胺之醯亞胺基密度為0.20~0.35。 [8]如[1]至[7]中任一項所記載之積層體,其中上述層P之厚度為10~100 μm。 [9]如[1]至[8]中任一項所記載之積層體,其中上述四氟乙烯系聚合物係熔融溫度為260~320℃之熱熔融性四氟乙烯系聚合物。 [10]如[1]至[9]中任一項所記載之積層體,其中上述層F之厚度為1~38 μm。[6] The laminate according to any one of [1] to [5], wherein the non-thermoplastic polyimide has a tensile modulus of 0.2 GPa or more at 320°C. [7] The laminate according to any one of [1] to [6], wherein the non-thermoplastic polyimide has a density of 0.20 to 0.35. [8] The layered product according to any one of [1] to [7], wherein the thickness of the layer P is 10 to 100 μm. [9] The laminate according to any one of [1] to [8], wherein the tetrafluoroethylene-based polymer is a hot-melt tetrafluoroethylene-based polymer having a melting temperature of 260 to 320°C. [10] The layered product according to any one of [1] to [9], wherein the thickness of the layer F is 1 to 38 μm.

[11]如[1]至[10]中任一項所記載之積層體,其中於使上述積層體在24℃且相對濕度50%之氛圍中保持24小時之情形時,與上述層F接觸之上述層P之介電常數為2.8以下,且介電損耗正切為0.004以下。 [12]如[1]至[11]中任一項所記載之積層體,其中於使上述積層體在85℃且相對濕度85%之氛圍中保持72小時之情形時,與上述層F接觸之上述層P之介電常數為2.8以下,且介電損耗正切為0.007以下。 [13]一種印刷基板之製造方法,其係對如上述[1]至[12]中任一項所記載之積層體之上述金屬箔層進行蝕刻處理,形成傳輸電路,而獲得印刷基板。 [14]一種印刷基板,其係具有非熱塑性聚醯亞胺之層P、存在於上述層P之至少一面之四氟乙烯系聚合物之層F、及存在於上述層F之至少一面之傳輸電路者,且上述層P之吸水率未達1.5%,且線膨脹係數之絕對值為25 ppm/℃以下。 [15]一種天線,其由如上述[14]所記載之印刷基板所形成。 [發明之效果][11] The laminate as described in any one of [1] to [10], wherein the laminate is in contact with the layer F when the laminate is maintained in an atmosphere of 24° C. and a relative humidity of 50% for 24 hours The dielectric constant of the above-mentioned layer P is 2.8 or less, and the dielectric loss tangent is 0.004 or less. [12] The laminate as described in any one of [1] to [11], wherein the laminate is in contact with the layer F when the laminate is maintained in an atmosphere of 85° C. and a relative humidity of 85% for 72 hours The dielectric constant of the above-mentioned layer P is 2.8 or less, and the dielectric loss tangent is 0.007 or less. [13] A method of manufacturing a printed circuit board, which comprises subjecting the metal foil layer of the laminate as described in any one of [1] to [12] to an etching process to form a transmission circuit to obtain a printed circuit board. [14] A printed circuit board having a layer P of non-thermoplastic polyimide, a layer F of a tetrafluoroethylene polymer present on at least one side of the above-mentioned layer P, and a transmission layer present on at least one side of the above-mentioned layer F Circuit, and the water absorption rate of the above-mentioned layer P is less than 1.5%, and the absolute value of the linear expansion coefficient is 25 ppm/℃ or less. [15] An antenna formed of the printed circuit board as described in [14] above. [Effects of Invention]

根據本發明,能夠獲得不易受到水之影響且傳輸損失得到降低之印刷基板。又,能夠獲得一種積層體,其適於上述印刷基板之有效率之製造,具有介電特性、耐熱性及密接性優異且吸水率較低之介電體層、與金屬箔層。According to the present invention, it is possible to obtain a printed circuit board that is not susceptible to the influence of water and whose transmission loss is reduced. In addition, it is possible to obtain a laminated body suitable for efficient production of the above-mentioned printed circuit board, and having a dielectric layer and a metal foil layer with excellent dielectric properties, heat resistance, and adhesiveness, and a low water absorption rate.

以下用語具有以下含義。 所謂「熱熔融性聚合物(樹脂)」,意指熔融流動性之聚合物,且意指於負載49 N之條件下,在較聚合物之熔融溫度高20℃以上之溫度下,存在熔融流動速度變為0.1~1000 g/10分鐘之溫度之聚合物。再者,所謂「熔融流動速度」,意指JIS K 7210:1999(ISO 1133:1997)中所規定之聚合物之熔體質量流率(MFR,Melt mass-Flow Rate)。 所謂「聚合物之玻璃轉移點(Tg)」,係指利用動態黏彈性測定(DMA,Dynamic Mechanical Analysis)法對聚合物進行分析而測定出之值。 「聚合物之熔融溫度」係利用示差掃描熱量測定(DSC,Differential Scanning Calorimetry)法測定出之與熔解波峰之最大值對應之溫度。 「粉末之D50」係利用雷射繞射散射法求出之粉末之體積基準累積50%直徑。即,利用雷射繞射散射法測定粒度分佈,將粒子之集群之總體積設為100%,求出累積曲線,於該累積曲線上累積體積變為50%之點之粒徑。 「粉末之D90」係利用雷射繞射散射法求出之粉末之體積基準累積90%直徑。即,利用雷射繞射散射法測定粒度分佈,將粒子之集群之總體積設為100%,求出累積曲線,於該累積曲線上累積體積變為90%之點之粒徑。 粉末之D50及D90係使粉末分散於水中,藉由使用雷射繞射散射式之粒度分佈測定裝置(堀場製作所公司製造,LA-920測定器)之雷射繞射散射法進行分析而求出。 「液之黏度」係使用B型黏度計,於室溫下(25℃)在轉速為30 rpm之條件下測定出之液之黏度。反覆進行3次測定,求出3次之測定值之平均值。 「層之十點平均粗糙度」係JIS B 0601:2013之附屬書JA中所規定之值。 「層之均方根粗糙度」係JIS B 0601:2013(ISO 4287:1997,Amd.1:2009)中所規定之值。 「膜之介電常數及介電損耗正切」只要無特別說明,則係於23℃±2℃、相對濕度50±5%之環境下,在頻率10 GHz下,使用分離柱介電體共振器(SPDR,Split Post Dielectric Resonator)測定出之值。「層之介電常數及介電損耗正切」亦同樣。 「膜之拉伸彈性模數」係使用廣域黏彈性測定裝置,於測定頻率10 Hz下測定出之值。 加成聚合系聚合物(樹脂)中之所謂「單元」,意指藉由單體之聚合而形成之基於上述單體1分子之原子團。單元亦可為藉由聚合反應直接形成之原子團,亦可為藉由對聚合物進行處理從而使得上述原子團之一部分轉換為其他結構之原子團。以下,亦將基於單體a之單元簡記為「單體a單元」。 共縮聚系聚合物(樹脂)中之所謂「單元」,意指藉由共縮聚之2種單體之共縮聚而形成之源自2種單體之各1分子之原子團。例如,本發明中之非熱塑性聚醯亞胺中,將四羧酸殘基與二胺殘基之各者稱為單元。The following terms have the following meanings. The so-called "hot-melt polymer (resin)" means a polymer with melt fluidity, and it means that under a load of 49 N, there is a melt flow at a temperature higher than the melting temperature of the polymer by 20℃ or more. The speed is changed to 0.1~1000 g/10 minutes for the temperature polymer. Furthermore, the so-called "melt flow rate" means the melt mass flow rate (MFR, Melt mass-flow rate) of the polymer specified in JIS K 7210: 1999 (ISO 1133: 1997). The so-called "Glass Transition Point (Tg) of a polymer" refers to the value measured by analyzing the polymer using a dynamic viscoelasticity measurement (DMA, Dynamic Mechanical Analysis) method. The "melting temperature of the polymer" is the temperature corresponding to the maximum melting peak measured by the differential scanning calorimetry (DSC, Differential Scanning Calorimetry) method. "D50 of powder" is the cumulative 50% diameter of the powder based on the volume obtained by the laser diffraction scattering method. That is, the particle size distribution is measured by the laser diffraction scattering method, the total volume of the cluster of particles is set to 100%, and the cumulative curve is obtained, and the particle size at the point where the cumulative volume becomes 50% on the cumulative curve. "D90 of powder" is the cumulative 90% diameter of the powder based on the volume obtained by the laser diffraction scattering method. That is, the particle size distribution is measured by the laser diffraction scattering method, the total volume of the cluster of particles is set to 100%, and the cumulative curve is obtained, and the particle size at the point where the cumulative volume becomes 90% on the cumulative curve. The D50 and D90 of the powder are obtained by dispersing the powder in water and analyzing it by the laser diffraction scattering method using a laser diffraction scattering type particle size distribution measuring device (manufactured by Horiba Manufacturing Co., Ltd., LA-920 measuring device) . "Liquid viscosity" is the viscosity of the liquid measured at room temperature (25°C) at 30 rpm using a type B viscometer. The measurement is repeated 3 times, and the average value of the 3 measurements is obtained. "Ten-point average roughness of layer" is the value specified in the appendix JA of JIS B 0601:2013. "Root mean square roughness of layer" is the value specified in JIS B 0601:2013 (ISO 4287:1997, Amd.1:2009). "Film dielectric constant and dielectric loss tangent" unless otherwise specified, use a separation column dielectric resonator at a frequency of 10 GHz under an environment of 23℃±2℃ and relative humidity of 50±5% (SPDR, Split Post Dielectric Resonator) measured value. The same applies to "layer dielectric constant and dielectric loss tangent". "The tensile elastic modulus of the film" is a value measured at a measuring frequency of 10 Hz using a wide-area viscoelasticity measuring device. The so-called "unit" in the addition polymerization polymer (resin) means an atomic group based on 1 molecule of the above-mentioned monomer formed by the polymerization of a monomer. The unit may also be an atomic group directly formed by a polymerization reaction, or may be an atomic group formed by processing a polymer so that a part of the above-mentioned atomic group is converted into another structure. Hereinafter, the unit based on monomer a is also abbreviated as "monomer a unit". The so-called "unit" in the copolycondensation polymer (resin) means an atomic group derived from 1 molecule of each of the two monomers formed by the copolycondensation of two monomers of the copolycondensation. For example, in the non-thermoplastic polyimide in the present invention, each of the tetracarboxylic acid residue and the diamine residue is referred to as a unit.

本發明之積層體係具有金屬箔層、非熱塑性聚醯亞胺之層P、及四氟乙烯系聚合物之層F,且最外層之至少一層為金屬箔層之至少3層結構者,且於上述層P之至少一面存在層F。本發明中之層P之吸水率未達1.5%,層P之線膨脹係數之絕對值為25 ppm/℃以下。再者,以下,亦將上述四氟乙烯系聚合物記載為「F聚合物」。 本發明之積層體(本發明之印刷基板亦同樣)吸水率較低,且介電特性、耐熱性、及對金屬箔層(於印刷基板之情形時係傳輸電路)之密接性優異之原因未必明確,如下述般考慮。The laminated system of the present invention has a metal foil layer, a non-thermoplastic polyimide layer P, and a tetrafluoroethylene polymer layer F, and at least one of the outermost layers is a metal foil layer with at least three layers, and A layer F is present on at least one side of the layer P described above. The water absorption rate of the layer P in the present invention is less than 1.5%, and the absolute value of the linear expansion coefficient of the layer P is 25 ppm/°C or less. In addition, hereinafter, the above-mentioned tetrafluoroethylene-based polymer is also referred to as "F polymer". The laminated body of the present invention (the same applies to the printed circuit board of the present invention) has low water absorption, and the dielectric properties, heat resistance, and excellent adhesion to the metal foil layer (transmission circuit in the case of a printed circuit board) may not be the reason why To be clear, consider as follows.

於本發明中之層P之至少一面存在有層F。認為,由於F聚合物之介電特性與耐熱性優異,且吸水率較低,故藉由該構成而使得積層體之介電特性、耐熱性、及吸水率提高。另一方面,推測F聚合物總體來看線膨脹係數較大,易使積層體之尺寸穩定性與密接性下降。與之相對,本發明中之層P係線膨脹係數為特定之範圍內,且含有非熱塑性聚醯亞胺之層。非熱塑性聚醯亞胺係亦被稱為改良型聚醯亞胺之具有非熱塑性嵌段部位,且醯亞胺基密度較低之聚醯亞胺。認為上述聚醯亞胺與F聚合物高度地相互作用,使積層體之尺寸穩定性與密接性提高。其結果為,浮焊步驟等高溫製程中,金屬箔層之剝離得到抑制,積層體之膨脹得到抑制。There is a layer F on at least one side of the layer P in the present invention. It is considered that since the F polymer has excellent dielectric properties and heat resistance, and has a low water absorption rate, this configuration improves the dielectric properties, heat resistance, and water absorption rate of the laminate. On the other hand, it is estimated that the F polymer has a large linear expansion coefficient as a whole, which tends to reduce the dimensional stability and adhesion of the laminate. In contrast, the layer P in the present invention has a linear expansion coefficient within a specific range and contains a non-thermoplastic polyimide layer. Non-thermoplastic polyimides are also called modified polyimides, which have non-thermoplastic block sites and have a lower density of imine groups. It is considered that the above-mentioned polyimide and the F polymer highly interact to improve the dimensional stability and adhesion of the laminate. As a result, the peeling of the metal foil layer is suppressed and the expansion of the laminate is suppressed during high-temperature processes such as the float soldering step.

再者,所謂「非熱塑性聚醯亞胺」,係指即便進行加熱亦不會表現出軟化、接著性,且使用動態黏彈性測定裝置(DMA)測得之於30℃下之儲存模數為1.0×109 Pa以上、於280℃下之儲存模數為3.0×108 Pa以上的聚醯亞胺。「非熱塑性聚醯亞胺」亦係如下聚醯亞胺:使單體組合並進行溶液聚合,對所獲得之溶液(聚醯亞胺前驅物之溶液)進行乾燥,進而使其醯亞胺化,將所形成之成形體(膜等)於450℃下加熱1分鐘時保持形狀。 又,所謂「熱塑性聚醯亞胺」,係指可確認玻璃轉移溫度(Tg),且使用DMA測得之於30℃下之儲存模數為1.0×109 Pa以上、於280℃下之儲存模數未達3.0×108 Pa的聚醯亞胺。「熱塑性聚醯亞胺」亦係如下聚醯亞胺:使單體組合並進行溶液聚合,對所獲得之溶液(聚醯亞胺前驅物之溶液)進行乾燥,進而使其醯亞胺化,將所形成之成形體(膜等)於450℃下加熱1分鐘時,因皺褶或伸長而發生變形或熔合。Furthermore, the so-called "non-thermoplastic polyimide" means that even if heated, it does not exhibit softening and adhesion, and the storage modulus at 30°C measured with a dynamic viscoelasticity measuring device (DMA) is Polyimide with 1.0×10 9 Pa or more and a storage modulus of 3.0×10 8 Pa or more at 280°C. "Non-thermoplastic polyimide" is also the following polyimide: combining monomers and performing solution polymerization, drying the obtained solution (solution of polyimide precursor), and then making it imidize , The formed molded body (film, etc.) will maintain its shape when heated at 450°C for 1 minute. In addition, the so-called "thermoplastic polyimide" means the glass transition temperature (Tg) can be confirmed, and the storage modulus at 30℃ measured by DMA is 1.0×10 9 Pa or more, and the storage at 280℃ Polyimide with a modulus of less than 3.0×10 8 Pa. "Thermoplastic polyimide" is also the following polyimide: combining monomers and performing solution polymerization, drying the obtained solution (solution of the polyimide precursor), and then making it imidize, When the formed molded body (film, etc.) is heated at 450°C for 1 minute, it deforms or fuses due to wrinkles or elongation.

本發明之積層體係具有金屬箔層、層P、及層F,且至少一最外層為金屬箔層者(覆金屬箔積層體)。 本發明之積層體可僅於層P之單面存在有層F,亦可於層P之兩面存在有層F。於前者之情形時,可僅於層P之金屬箔層側之面存在有層F,亦可僅於層P之金屬箔層側之相反側之面(最表面)存在有層F。The laminated system of the present invention has a metal foil layer, a layer P, and a layer F, and at least one outermost layer is a metal foil layer (metal foil-clad laminate). The layered body of the present invention may have layer F on only one side of layer P, or layer F on both sides of layer P. In the former case, the layer F may exist only on the surface on the metal foil layer side of the layer P, or the layer F may exist only on the surface (the outermost surface) opposite to the metal foil layer side of the layer P.

作為本發明之積層體之態樣,可列舉:依序具有金屬箔層、層F及層P之態樣;依序具有金屬箔層、層P及層F之態樣;依序具有金屬箔層、層F、層P及層F之態樣。若於最表面具有層F,則能夠獲得吸水率更低之積層體,若於金屬箔層與層P之間具有層F,則能夠獲得耐熱性(尤其是耐浮焊性)與介電特性更加優異之積層體。作為本發明之積層體之態樣,較佳為於層P之兩面分別具有層F之最後者之態樣。 進而,本發明之積層體亦可為於兩面具有金屬箔層之兩面覆金屬箔積層體。作為兩面覆金屬箔積層體,可列舉:依序具有金屬箔層、層F、層P及金屬箔層之態樣;依序具有金屬箔層、層F、層P、層F及金屬箔層之態樣。作為兩面覆金屬箔積層體,較佳為於層P之兩面分別具有層F之後者之態樣。 本發明之積層體中,較佳為層P之至少一部分與層F之至少一部分接觸,特佳為層P之整個單面與層F之整個單面接觸。於該情形時,不僅更加提高層P與層F之密接力,而且吸水率亦易顯著地下降。As the aspect of the laminated body of the present invention, there may be mentioned: an aspect having a metal foil layer, a layer F, and a layer P in this order; an aspect having a metal foil layer, a layer P, and a layer F in this order; an aspect having a metal foil in this order The aspect of layer, layer F, layer P, and layer F. If there is layer F on the outermost surface, a laminate with lower water absorption can be obtained. If there is layer F between the metal foil layer and layer P, heat resistance (especially float solder resistance) and dielectric properties can be obtained A more excellent laminate. As the aspect of the laminated body of the present invention, it is preferable to have the last aspect of the layer F on both sides of the layer P, respectively. Furthermore, the laminate of the present invention may be a metal foil-clad laminate having metal foil layers on both sides. Examples of the metal foil-clad laminate on both sides include: a metal foil layer, a layer F, a layer P, and a metal foil layer in this order; and a metal foil layer, a layer F, a layer P, a layer F, and a metal foil layer in this order The state. As the double-sided metal foil-clad laminate, it is preferable to have the layer F on both sides of the layer P, respectively. In the laminate of the present invention, it is preferable that at least a part of the layer P is in contact with at least a part of the layer F, and it is particularly preferable that the entire single surface of the layer P is in contact with the entire single surface of the layer F. In this case, not only the adhesion between the layer P and the layer F is further improved, but the water absorption rate is also likely to decrease significantly.

本發明中,層P之厚度相對於層F之厚度之比較佳為1以上。上述比較佳為2以上,更佳為4以上,特佳為8以上。上述比較佳為100以下,更佳為50以下,更佳為35以下,特佳為20以下。於該情形時,易使加熱時之積層體之尺寸變化(翹曲等)及界面剝離之抑制、積層體之吸水性、及積層體之介電特性平衡。再者,如上述最後者之態樣般,於本發明之積層體含有複數層之層F之情形時,上述層F之厚度意指各層F之厚度。 本發明中之金屬箔層之厚度較佳為2~30 μm,特佳為3~25 μm。 又,層F之厚度相對於金屬箔層之厚度之比較佳為0.5以上,較佳為1以上。上述比較佳為10以下,更佳為5以下。於該情形時,易使加熱時之積層體之尺寸變化(翹曲等)及界面剝離之抑制、積層體之吸水性、及積層體之介電特性平衡。In the present invention, the ratio of the thickness of the layer P to the thickness of the layer F is preferably 1 or more. The above-mentioned ratio is preferably 2 or more, more preferably 4 or more, and particularly preferably 8 or more. The above-mentioned comparison is preferably 100 or less, more preferably 50 or less, more preferably 35 or less, and particularly preferably 20 or less. In this case, it is easy to balance the dimensional change (warpage, etc.) of the laminate during heating and the suppression of interfacial peeling, the water absorption of the laminate, and the dielectric properties of the laminate. Furthermore, as in the last aspect mentioned above, when the laminate of the present invention contains a plurality of layers F, the thickness of the above-mentioned layer F means the thickness of each layer F. The thickness of the metal foil layer in the present invention is preferably 2-30 μm, particularly preferably 3-25 μm. In addition, the ratio of the thickness of the layer F to the thickness of the metal foil layer is preferably 0.5 or more, and more preferably 1 or more. The above-mentioned comparison is preferably 10 or less, and more preferably 5 or less. In this case, it is easy to balance the dimensional change (warpage, etc.) of the laminate during heating and the suppression of interfacial peeling, the water absorption of the laminate, and the dielectric properties of the laminate.

作為本發明中之金屬箔之材質,可列舉:銅、銅合金、不鏽鋼、鎳、鎳合金(亦包括42合金)、鋁、鋁合金、鈦、鈦合金等。作為金屬箔之材質,較佳為銅及銅合金。 作為銅箔,可列舉:壓延銅箔、電解銅箔。 於金屬箔之表面亦可形成有防銹層(鉻酸鹽等氧化物皮膜等)、耐熱層等。 金屬箔層之表面亦可藉由矽烷偶合劑進行處理。於該情形時,可金屬箔之整個表面經處理,亦可金屬箔之表面之一部分經處理。 金屬箔層之表面之十點平均粗糙度(以下,亦記載為「Rzjis」)較佳為0.2~2.5 μm。於該情形時,易獲得金屬箔層與層F或層P之密接性變得良好,且介電特性優異之積層體。As the material of the metal foil in the present invention, copper, copper alloy, stainless steel, nickel, nickel alloy (including 42 alloy), aluminum, aluminum alloy, titanium, titanium alloy, etc. can be cited. As the material of the metal foil, copper and copper alloy are preferred. Examples of copper foil include rolled copper foil and electrolytic copper foil. An anti-rust layer (oxide film such as chromate, etc.), a heat-resistant layer, etc. may also be formed on the surface of the metal foil. The surface of the metal foil layer can also be treated with a silane coupling agent. In this case, the entire surface of the metal foil can be treated, or a part of the surface of the metal foil can be treated. The ten-point average roughness of the surface of the metal foil layer (hereinafter also referred to as "Rzjis") is preferably 0.2-2.5 μm. In this case, it is easy to obtain a laminate having good adhesion between the metal foil layer and the layer F or the layer P and having excellent dielectric properties.

金屬箔層之表面之均方根粗糙度(以下,亦記載為「Rq」)較佳為0.05 μm以上,更佳為0.10 μm以上,進而較佳為0.12 μm以上。Rq較佳為0.25 μm以下,更佳為0.20 μm以下。 若金屬箔層之Rq為上述範圍內,則金屬箔層與各層之密接性變得良好,且其界面之有效導電率變高,傳輸損失更易降低。 再者,所謂界面之有效導電率,係指層之樹脂與金屬箔層之接觸界面處之導電率。由於電氣信號於界面附近流動,故越為高頻電氣信號,則界面之有效導電率越高,其傳輸損失越降低。 界面之有效導電率依據下述Groisse近似式求出。 [數1]

Figure 02_image001
The root mean square roughness (hereinafter also referred to as "Rq") of the surface of the metal foil layer is preferably 0.05 μm or more, more preferably 0.10 μm or more, and still more preferably 0.12 μm or more. Rq is preferably 0.25 μm or less, more preferably 0.20 μm or less. If the Rq of the metal foil layer is within the above range, the adhesion between the metal foil layer and each layer becomes good, and the effective conductivity of the interface becomes higher, and the transmission loss is more likely to be reduced. Furthermore, the so-called effective conductivity of the interface refers to the conductivity at the contact interface between the resin of the layer and the metal foil layer. Since the electrical signal flows near the interface, the higher the high frequency electrical signal, the higher the effective conductivity of the interface and the lower its transmission loss. The effective conductivity of the interface is calculated according to the following Groisse approximation. [Number 1]
Figure 02_image001

式中之記號表示以下含義。 σc :有效導電率 σ:導體之導電率 s:電流流動之表皮厚度 h:導體之表面之均方根粗糙度 再者,由於導體之導電率基於金屬箔之金屬種類決定,導體之表面之均方根粗糙度基於金屬箔層之Rq決定,表皮厚度基於頻率決定,故金屬箔層之Rq越小,則界面之有效導電率越大。The symbols in the formula indicate the following meanings. σ c : effective conductivity σ: conductivity of the conductor s: skin thickness of the current flow h: root-mean-square roughness of the surface of the conductor. Furthermore, since the conductivity of the conductor is determined by the type of metal of the metal foil, the surface of the conductor is The root mean square roughness is determined based on the Rq of the metal foil layer, and the skin thickness is determined based on the frequency. Therefore, the smaller the Rq of the metal foil layer, the greater the effective conductivity of the interface.

又,金屬箔層亦可為含有2層以上金屬箔之附有載體之金屬箔。作為附有載體之金屬箔,可列舉包含載體銅箔(厚度:10~35 μm)與隔著剝離層積層於載體銅箔上之極薄銅箔(厚度:2~5 μm)之附有載體之銅箔。 若於上述附有載體之銅箔之極薄銅箔側使層依序積層後,僅剝離載體銅箔,則可容易地形成具有極薄銅箔之積層體。若使用該積層體,則能夠藉由改良型半加成(MSAP,Modified Semi-Additive Process)製程,形成利用極薄銅箔層作為鍍覆晶種層之精細圖案。 作為上述剝離層,就耐熱性之觀點而言,較佳為含有鎳或鉻之金屬層、或積層有該金屬層之多層金屬層。若為上述剝離層,則即便經過300℃以上之步驟,亦可使載體金屬箔容易地自極薄金屬箔剝離。 作為附有載體之金屬箔之具體例,可列舉:福田金屬箔粉工業股份有限公司製造之商品名「FUTF-5DAF-2」。In addition, the metal foil layer may be a metal foil with a carrier containing two or more metal foils. Examples of the metal foil with carrier include carrier copper foil (thickness: 10 to 35 μm) and ultra-thin copper foil (thickness: 2 to 5 μm) laminated on the carrier copper foil via a peeling layer. The copper foil. After the layers are sequentially laminated on the ultra-thin copper foil side of the above-mentioned carrier-attached copper foil, and only the carrier copper foil is peeled off, a laminate having the ultra-thin copper foil can be easily formed. If this laminate is used, it is possible to form a fine pattern using an ultra-thin copper foil layer as a plating seed layer through a Modified Semi-Additive Process (MSAP) process. As the peeling layer, from the viewpoint of heat resistance, a metal layer containing nickel or chromium, or a multilayer metal layer in which the metal layer is laminated is preferable. In the case of the above-mentioned peeling layer, the carrier metal foil can be easily peeled from the ultra-thin metal foil even after a step of 300°C or higher. As a specific example of the metal foil with the carrier, the trade name "FUTF-5DAF-2" manufactured by Futian Metal Foil & Powder Industry Co., Ltd. can be cited.

本發明中之層P含有非熱塑性聚醯亞胺。只要不妨礙本發明之效果,則層P亦可含有其他成分。作為其他成分之具體例,就進而改善介電特性之觀點而言,可列舉:PTFE、PFA等F聚合物之粉末,就降低線膨脹係數之觀點而言,可列舉:玻璃切股、芳香族聚醯胺切股、聚苯并㗁唑切股、二氧化矽、氧化鋁、氧化鎂等填料。 層P較佳為以非熱塑性聚醯亞胺作為主成分,較佳為含有80~100質量%之非熱塑性聚醯亞胺。The layer P in the present invention contains non-thermoplastic polyimide. As long as the effect of the present invention is not impaired, the layer P may contain other components. As specific examples of other components, from the viewpoint of further improving the dielectric properties, powders of F polymers such as PTFE and PFA can be cited, and from the viewpoint of reducing the coefficient of linear expansion, glass strands, aromatics can be cited Fillers such as polyamide cut strands, polybenzoxazole cut strands, silica, alumina, and magnesium oxide. The layer P preferably contains non-thermoplastic polyimide as a main component, and preferably contains 80-100% by mass of non-thermoplastic polyimide.

層P之吸水率未達1.5%,較佳為1.2%以下。層P之吸水率較佳為超過0%。 層P之線膨脹係數之絕對值為25 ppm/℃以下,較佳為22 ppm/℃以下,更佳為15 ppm/℃以下,特佳為10 ppm/℃以下。層P之線膨脹率係數之絕對值較佳為超過0 ppm/℃。 層P較佳為由非熱塑性聚醯亞胺之膜(以下,亦記載為「mPI膜」)所形成。該情形時之層P之物性視為原本之mPI膜之物性。 層P之線膨脹率係數係如下述般求出:使用熱機械性分析裝置,使層P之形成所使用之非熱塑性聚醯亞胺之膜於測定負載:29.4 mN、測定氛圍:氮氣氛圍下,以10℃/分鐘自0℃升溫至400℃後,以40℃/分鐘冷卻恢復至10℃,進而以10℃/分鐘自10℃升溫至200℃,求出此時之線膨脹係數。 mPI膜之表面可利用矽烷偶合劑等進行表面處理,亦可藉由電暈處理、電漿處理等進行表面改質。又,mPI膜之表面可經粗面化處理,亦可經退火處理。The water absorption rate of the layer P is less than 1.5%, preferably 1.2% or less. The water absorption rate of the layer P is preferably more than 0%. The absolute value of the linear expansion coefficient of the layer P is 25 ppm/°C or less, preferably 22 ppm/°C or less, more preferably 15 ppm/°C or less, and particularly preferably 10 ppm/°C or less. The absolute value of the coefficient of linear expansion of the layer P is preferably more than 0 ppm/°C. The layer P is preferably formed of a non-thermoplastic polyimide film (hereinafter also referred to as "mPI film"). In this case, the physical properties of the layer P are regarded as the physical properties of the original mPI film. The coefficient of linear expansion of the layer P is obtained as follows: using a thermomechanical analysis device, the non-thermoplastic polyimide film used in the formation of the layer P is measured at a load: 29.4 mN, and a measurement atmosphere: nitrogen atmosphere After heating up from 0°C to 400°C at 10°C/min, cooling it back to 10°C at 40°C/min, and then heating it up from 10°C to 200°C at 10°C/min to obtain the linear expansion coefficient at this time. The surface of the mPI film can be treated with a silane coupling agent, etc., and can also be modified by corona treatment, plasma treatment, etc. In addition, the surface of the mPI film can be roughened or annealed.

尤其,若mPI膜之表面經電漿處理,則變得能夠於更低溫下與層F積層,更易減少層P之變形。電漿處理較佳為大氣壓電漿處理或真空電漿處理。 真空電漿處理較佳為於0.1~1330 Pa(較佳為1~266 Pa)之氣體壓力下進行持續放電之輝光放電處理(即,所謂之低溫電漿處理)。於該情形時,若向放電電極間施加10 kHz~2 GHz之頻率且10 W~100 kW之電力,則可進行穩定之輝光放電處理。 真空電漿處理之放電電力密度就調整mPI膜之表面之潤濕張力之觀點而言,較佳為5~400 W・分鐘/m2 。 作為使用氣體,可列舉:氦氣、氖氣、氬氣、氮氣、氧氣、二氧化碳、氫氣、空氣、水蒸氣等。氣體可單獨地使用1種,亦可混合2種以上使用。作為氣體,就更加提高層間密接強度之觀點而言,較佳為氬氣、氮氣、氫氣、及其等之混合氣體。 真空電漿處理之時間就更加提高層間密接強度之觀點而言,較佳為5~60秒鐘。In particular, if the surface of the mPI film is plasma treated, it becomes possible to laminate with layer F at a lower temperature, and it is easier to reduce the deformation of layer P. The plasma treatment is preferably atmospheric pressure plasma treatment or vacuum plasma treatment. The vacuum plasma treatment is preferably a continuous discharge glow discharge treatment (that is, the so-called low-temperature plasma treatment) at a gas pressure of 0.1 to 1330 Pa (preferably 1 to 266 Pa). In this case, if a frequency of 10 kHz to 2 GHz and an electric power of 10 W to 100 kW are applied between the discharge electrodes, stable glow discharge treatment can be performed. From the viewpoint of adjusting the wetting tension of the surface of the mPI film, the discharge power density of the vacuum plasma treatment is preferably 5 to 400 W·min/m 2 . Examples of the gas used include helium, neon, argon, nitrogen, oxygen, carbon dioxide, hydrogen, air, water vapor, and the like. One type of gas may be used alone, or two or more types may be mixed and used. The gas is preferably argon, nitrogen, hydrogen, or a mixed gas of argon, nitrogen, hydrogen, and the like from the viewpoint of further improving the interlayer adhesion strength. The time of the vacuum plasma treatment is preferably 5 to 60 seconds from the viewpoint of further improving the adhesion strength between layers.

大氣壓電漿處理中,較佳為0.8~1.2氣壓下且惰性氣體(氬氣、氮氣、氦氣等)之氛圍下之輝光放電處理。惰性氣體中亦可混合有微量之活性氣體(氧氣、氫氣、二氧化碳、乙烯、四氟乙烯等)。 作為使用氣體,就更加提高層間密接強度之觀點而言,較佳為氬氣、氮氣、氫氣、及其等之混合氣體。 大氣壓電漿處理中之電壓、電源之頻率、電漿處理之時間通常依序為1~10 kV、1~20 kHz、0.1秒鐘~10分鐘。 大氣壓電漿處理之放電電力密度較佳為5~400 W・分鐘/m2In the atmospheric piezoelectric slurry treatment, the glow discharge treatment under the atmosphere of an inert gas (argon, nitrogen, helium, etc.) at 0.8-1.2 atmospheric pressure is preferable. The inert gas can also be mixed with a trace amount of active gas (oxygen, hydrogen, carbon dioxide, ethylene, tetrafluoroethylene, etc.). The gas used is preferably argon, nitrogen, hydrogen, and a mixed gas thereof from the viewpoint of further improving the adhesion strength between layers. The voltage, frequency of power supply and plasma treatment time in atmospheric piezoelectric plasma treatment are usually 1~10 kV, 1~20 kHz, 0.1 second~10 minutes in sequence. The discharge power density of atmospheric piezoelectric slurry treatment is preferably 5 to 400 W·min/m 2 .

本發明中之非熱塑性聚醯亞胺較佳為含有非熱塑性嵌段部位。所謂非熱塑性嵌段部位,意指對於僅使構成嵌段部位之單體進行溶液聚合而獲得之聚醯亞胺前驅物,與上述非熱塑性聚醯亞胺之定義方法同樣地進行評價時,由形成保持形狀之聚醯亞胺之單體之組合所形成之嵌段部位。另一方面,所謂熱塑性嵌段部位,意指對於僅使構成嵌段部位之單體進行溶液聚合而獲得之聚醯亞胺前驅物,與上述非熱塑性聚醯亞胺之定義方法同樣地進行評價時,由形成未保持形狀之聚醯亞胺之單體之組合所形成之嵌段部位。 再者,於判斷嵌段部位係熱塑性或非熱塑性時,於剛直之情形時,只要收集其碎片進行加熱,並根據其形狀之保持狀態進行判斷即可。The non-thermoplastic polyimide in the present invention preferably contains non-thermoplastic block sites. The so-called non-thermoplastic block part means that the polyimide precursor obtained by solution polymerization of only the monomer constituting the block part is evaluated in the same way as the definition method of the non-thermoplastic polyimide mentioned above. A block site formed by a combination of monomers of polyimide that maintains the shape. On the other hand, the term "thermoplastic block site" means that the polyimide precursor obtained by solution polymerization of only the monomer constituting the block site is evaluated in the same way as the definition method of the non-thermoplastic polyimide described above. At this time, the block site is formed by the combination of monomers forming the polyimide that does not maintain its shape. Furthermore, when judging whether the block part is thermoplastic or non-thermoplastic, in the case of rigidity, it is only necessary to collect the fragments and heat, and judge according to the state of maintaining the shape.

本發明中之非熱塑性聚醯亞胺之玻璃轉移溫度較佳為280℃以上,更佳為290℃以上。上述玻璃轉移溫度較佳為450℃以下,特佳為400℃以下。於該情形時,能夠於更低溫下實現層F與層P之積層,易獲得尺寸穩定性更加優異之積層體。The glass transition temperature of the non-thermoplastic polyimide in the present invention is preferably 280°C or higher, more preferably 290°C or higher. The glass transition temperature is preferably 450°C or lower, particularly preferably 400°C or lower. In this case, the layer F and the layer P can be laminated at a lower temperature, and it is easy to obtain a laminated body with more excellent dimensional stability.

本發明中之非熱塑性聚醯亞胺於320℃下之拉伸彈性模數較佳為0.2 GPa以上,較佳為0.4 GPa以上。該拉伸彈性模數較佳為10 GPa以下,更佳為5 GPa以下。 該情形時之積層體即便為了對其進行加工而暴露於加熱操作與冷卻操作,處理性亦優異。即,若非熱塑性聚醯亞胺之拉伸彈性模數為上述下限以上,則進行加熱冷卻時,層F之收縮因層P之彈性而有效地得到緩和,更加不易於積層體產生皺褶,易提高所獲得之加工品之物性(表面平滑性等)。上述傾向於層F中之F聚合物之含量或層F之厚度較大之情形時變得顯著。又,非熱塑性聚醯亞胺之拉伸彈性模數若為上述上限以下,則積層體之柔軟性易更優異。The non-thermoplastic polyimide in the present invention has a tensile modulus of elasticity at 320°C of preferably 0.2 GPa or more, preferably 0.4 GPa or more. The tensile modulus of elasticity is preferably 10 GPa or less, more preferably 5 GPa or less. In this case, even if the laminate is exposed to a heating operation and a cooling operation in order to process it, it has excellent handling properties. That is, if the tensile elastic modulus of the non-thermoplastic polyimide is more than the above lower limit, the shrinkage of the layer F is effectively alleviated due to the elasticity of the layer P during heating and cooling, and the laminate is less likely to be wrinkled and easy Improve the physical properties (surface smoothness, etc.) of the processed products obtained. The above tendency becomes significant when the content of the F polymer in the layer F or the thickness of the layer F is large. In addition, if the tensile modulus of non-thermoplastic polyimide is less than the above upper limit, the flexibility of the laminate is likely to be more excellent.

本發明中之非熱塑性聚醯亞胺之醯亞胺基密度較佳為0.20~0.35。若醯亞胺基密度為上述上限,則非熱塑性聚醯亞胺之吸水率變得更低,更易抑制積層體之介電特性之變化。若上述醯亞胺基密度為上述下限,則不僅作為極性基發揮功能,更加提高層P與層F之密接力,而且吸水率易顯著地下降。 又,若非熱塑性聚醯亞胺之醯亞胺基密度為上述範圍內,則易變得更不易於積層體之加工時產生皺褶。上述傾向於非熱塑性聚醯亞胺之玻璃轉移溫度較低之情形時變得顯著。 再者,醯亞胺基密度係聚醯亞胺前驅物經醯亞胺化而成之聚醯亞胺中,醯亞胺基部分之每單位之分子量(140.1)除以聚醯亞胺之每單位之分子量而得出之值。例如,含有均苯四甲酸二酐(分子量:218.1)1莫耳與3,4'-氧二苯胺(分子量:200.2)1莫耳之2種成分的聚醯亞胺前驅物經醯亞胺化而成之聚醯亞胺(每單位之分子量:382.2)之醯亞胺基密度為140.1除以382.2而得出之值即0.37。The non-thermoplastic polyimide in the present invention preferably has a density of 0.20 to 0.35. If the density of the imine group is the above upper limit, the water absorption rate of the non-thermoplastic polyimide becomes lower, and it is easier to suppress the change in the dielectric properties of the laminate. If the above-mentioned imidine group density is within the above-mentioned lower limit, it not only functions as a polar group, but also improves the adhesion between the layer P and the layer F, and the water absorption rate tends to decrease significantly. Moreover, if the density of the imine group of the non-thermoplastic polyimide is within the above-mentioned range, it becomes more difficult to generate wrinkles during the processing of the laminate. The above-mentioned tendency of non-thermoplastic polyimide to have a lower glass transition temperature becomes significant. Furthermore, the density of the iminium group is the polyimidization of the polyimide precursor. In the polyimide, the molecular weight per unit (140.1) of the iminium portion divided by the polyimide The value derived from the unit's molecular weight. For example, a polyimide precursor containing two components of pyromellitic dianhydride (molecular weight: 218.1) 1 mol and 3,4'-oxydianiline (molecular weight: 200.2) 1 mol is imidized The resulting polyimide (molecular weight per unit: 382.2) has a density of 140.1 divided by 382.2 and the value obtained is 0.37.

本發明中之非熱塑性聚醯亞胺較佳為含有由選自由2,2'-雙[4-(4-胺基苯氧基)苯基]丙烷、對苯二胺、4,4'-雙(4-胺基苯氧基)聯苯、2,2'-二甲基-4,4'-二胺基聯苯、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,4-雙(3-胺基苯氧基)苯、4,4'-二胺基二苯醚、3,4'-二胺基二苯醚、4,4'-(1,3-伸苯基二亞異丙基)雙苯胺、2,2'-正丙基-4,4'-二胺基聯苯及4-胺基苯基-4'-胺基苯甲酸酯所組成之群中之複數種芳香族二胺,與選自由均苯四甲酸二酐、3,3',4,4'-聯苯四羧酸二酐、2,3,3',4'-聯苯四羧酸二酐、2,3,2',3'-聯苯四羧酸二酐、4,4'-氧二鄰苯二甲酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、1,4-伸苯基雙(偏苯三甲酸單酯)二酐、對伸苯基雙偏苯三酸酯二酐、1,4-伸苯基雙(偏苯三甲酸單酯)二酐、3,3',4,4'-二苯基碸四羧酸二酐、及2,3,6,7-萘四羧酸二酐所組成之群中之複數種芳香族酸二酐所形成之單元。於該情形時,不僅提高非熱塑性聚醯亞胺之非熱塑性,更加提高層P與層F之密接力,而且吸水率易顯著地下降。 非熱塑性聚醯亞胺相對於全部單元較佳為含有80莫耳%以上之上述單元。其上限為100莫耳%。The non-thermoplastic polyimide in the present invention preferably contains a compound selected from 2,2'-bis[4-(4-aminophenoxy)phenyl]propane, p-phenylenediamine, 4,4'- Bis(4-aminophenoxy)biphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 1,3-bis(4-aminophenoxy)benzene, 1 ,3-bis(3-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy)benzene, 4,4'-diaminophenoxy, 3,4'-diamine Diphenyl ether, 4,4'-(1,3-phenylene diisopropylidene) bisaniline, 2,2'-n-propyl-4,4'-diaminobiphenyl and 4-amine A plurality of aromatic diamines in the group consisting of phenyl-4'-aminobenzoic acid esters, and selected from the group consisting of pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic acid Acid dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 2,3,2',3'-biphenyltetracarboxylic dianhydride, 4,4'-oxydiphthalate Formic acid dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 1,4-phenylene bis(trimellitic acid monoester) dianhydride, p-phenylene bis Triester dianhydride, 1,4-phenylene bis(trimellitic acid monoester) dianhydride, 3,3',4,4'-diphenyl tetracarboxylic dianhydride, and 2,3, Units formed by multiple aromatic acid dianhydrides in the group consisting of 6,7-naphthalenetetracarboxylic dianhydride. In this case, not only the non-thermoplasticity of the non-thermoplastic polyimide is improved, but the adhesion between the layer P and the layer F is further improved, and the water absorption rate is easily reduced significantly. The non-thermoplastic polyimide preferably contains 80 mol% or more of the above-mentioned units with respect to all the units. The upper limit is 100 mol%.

進而,非熱塑性聚醯亞胺中,亦可將間苯二胺、1,5-二胺基萘、聯苯胺、3,3'-二甲氧基聯苯胺、對苯二甲胺、4,4'-二胺基二苯甲烷、3,3'-二甲基-4,4'-二胺基二苯甲烷、4,4'-二胺基二苯基碸、1,4-雙(3-甲基-5-胺基苯基)苯、1,3-雙(4-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2'-雙(三氟甲基)聯苯胺、3,3'-雙(三氟甲基)聯苯胺、2,2-雙(4-胺基苯基)六氟丙烷等其他二胺作為單元之單體成分。該等其他二胺可單獨地使用1種,亦可併用2種以上。Furthermore, among non-thermoplastic polyimides, meta-phenylenediamine, 1,5-diaminonaphthalene, benzidine, 3,3'-dimethoxybenzidine, p-xylylenediamine, 4, 4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 1,4-bis( 3-methyl-5-aminophenyl)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 2,2- Bis[4-(4-aminophenoxy)phenyl]propane, 2,2'-bis(trifluoromethyl)benzidine, 3,3'-bis(trifluoromethyl)benzidine, 2, Other diamines such as 2-bis(4-aminophenyl)hexafluoropropane are used as monomer components of the unit. These other diamines may be used individually by 1 type, and may use 2 or more types together.

進而,非熱塑性聚醯亞胺中,亦可將均苯四甲酸、2,3,6,7-萘四羧酸、吡啶-2,3,5,6-四羧酸、4,4'-氧二鄰苯二甲酸、3,3',4,4'-聯苯四羧酸、2,3',3,4'-聯苯四羧酸、3,3',4,4'-二苯甲酮四羧酸、5,5'-[1-甲基-1,1-乙烷二基雙(1,4-伸苯基)雙氧基]雙(異苯并呋喃-1,3-二酮)、4,4'-(六氟亞異丙基)二鄰苯二甲酸酐等其他四羧酸或其衍生物作為單元之單體成分。該等其他四羧酸或其衍生物可單獨地使用1種,亦可併用2種以上。Furthermore, in the non-thermoplastic polyimide, pyromellitic acid, 2,3,6,7-naphthalenetetracarboxylic acid, pyridine-2,3,5,6-tetracarboxylic acid, 4,4'- Oxydiphthalic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3',3,4'-biphenyltetracarboxylic acid, 3,3',4,4'-di Benzophenone tetracarboxylic acid, 5,5'-[1-methyl-1,1-ethanediylbis(1,4-phenylene)bisoxy]bis(isobenzofuran-1,3 -Diketone), 4,4'-(hexafluoroisopropylidene)diphthalic anhydride and other tetracarboxylic acids or their derivatives as monomer components of the unit. These other tetracarboxylic acids or derivatives thereof may be used singly or in combination of two or more kinds.

製造非熱塑性聚醯亞胺時之聚醯亞胺前驅物(聚醯胺酸)之合成較佳為於溶劑存在下進行。作為溶劑之具體例,可列舉:二甲基亞碸、二乙基亞碸、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N,N-二甲基乙醯胺、N,N-二乙基乙醯胺、N-甲基-2-吡咯啶酮、N-乙烯基-2-吡咯啶酮、苯酚、甲酚、二甲苯酚、鹵化苯酚、鄰苯二酚、六甲基磷醯胺。 聚醯亞胺前驅物較佳為製備成以固形物成分計含有5~40重量%之聚醯亞胺前驅物之溶液。又,於該情形時之溶液之黏度較佳為100~1000 Pa・s。又,溶液中聚醯亞胺前驅物之一部分亦可經醯亞胺化。The synthesis of the polyimide precursor (polyamide acid) in the production of non-thermoplastic polyimide is preferably carried out in the presence of a solvent. Specific examples of the solvent include: dimethyl sulfide, diethyl sulfide, N,N-dimethylformamide, N,N-diethylformamide, N,N-dimethyl Acetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, phenol, cresol, xylenol, halogenated phenol, o- Hydroquinone, hexamethylphosphamide. The polyimide precursor is preferably prepared as a solution containing 5-40% by weight of the polyimide precursor based on the solid content. In addition, the viscosity of the solution in this case is preferably 100 to 1000 Pa·s. In addition, a part of the polyimide precursor in the solution can also be imidized.

本發明中之層P之厚度較佳為10~100 μm。 本發明中之層P於10 GHz下之介電損耗正切較佳為0.008以下。上述介電損耗正切較佳為超過0。The thickness of the layer P in the present invention is preferably 10-100 μm. The dielectric loss tangent of the layer P in the present invention at 10 GHz is preferably less than 0.008. The above-mentioned dielectric loss tangent preferably exceeds zero.

本發明中之層F含有F聚合物。 只要不妨礙本發明之效果,則層F亦可含有其他成分,較佳為以F聚合物作為主成分,較佳為含有80~100質量%之F聚合物。 層F較佳為使F聚合物熔融而形成之層(F聚合物之熔融成形物之層)。於該情形時,由於層F變為非多孔質,故更加提高浮焊步驟中進行加熱時之隔熱效果,亦更易提高蝕刻耐受性。 F聚合物較佳為熱熔融性之F聚合物,就不僅更加提高積層體之耐熱性與層間密接力,而且吸水率易顯著地下降之觀點而言,更佳為熔融溫度260~320℃之F聚合物。The layer F in the present invention contains F polymer. As long as the effect of the present invention is not impaired, the layer F may contain other components, and preferably contains F polymer as the main component, and preferably contains 80 to 100% by mass of F polymer. The layer F is preferably a layer formed by melting the F polymer (a layer of a molten molded product of the F polymer). In this case, since the layer F becomes non-porous, the heat insulation effect during heating in the float welding step is further improved, and the etching resistance is also easier to improve. The F polymer is preferably a hot-melt F polymer. In terms of not only improving the heat resistance and interlayer adhesion of the laminate, but also the water absorption rate is likely to decrease significantly, it is more preferably a melting temperature of 260-320°C. F polymer.

本發明中之F聚合物係具有基於四氟乙烯(以下,亦記載為「TFE」)之單元(TFE單元)之聚合物。F聚合物可為TFE之均聚物,亦可為TFE及能夠與TFE共聚之共聚單體之共聚物。F聚合物相對於構成聚合物之全部單元,較佳為具有90~100莫耳%之TFE單元。F聚合物之氟含量較佳為70~76質量%,更佳為72~76質量%。 作為F聚合物,可列舉:聚四氟乙烯(PTFE)、TFE與乙烯之共聚物(ETFE)、TFE與丙烯之共聚物、TFE與全氟(烷基乙烯基醚)(以下,亦記載為「PAVE」)之共聚物(PFA)、TFE與六氟丙烯(以下,亦記載為「HFP」)之共聚物(FEP)、TFE與氟烷基乙烯(以下,亦記載為「FAE」)之共聚物、TFE與三氟氯乙烯之共聚物。再者,共聚物亦可進而具有基於其他共聚單體之單元。The F polymer in the present invention is a polymer having a unit (TFE unit) based on tetrafluoroethylene (hereinafter, also referred to as "TFE"). The F polymer can be a homopolymer of TFE, or a copolymer of TFE and a comonomer that can be copolymerized with TFE. The F polymer preferably has 90-100 mol% of TFE units with respect to all units constituting the polymer. The fluorine content of the F polymer is preferably 70 to 76% by mass, more preferably 72 to 76% by mass. Examples of F polymers include: polytetrafluoroethylene (PTFE), copolymers of TFE and ethylene (ETFE), copolymers of TFE and propylene, TFE and perfluoro(alkyl vinyl ether) (hereinafter also referred to as Copolymer of "PAVE") (PFA), copolymer of TFE and hexafluoropropylene (hereinafter, also referred to as "HFP") (FEP), TFE and fluoroalkyl ethylene (hereinafter, also referred to as "FAE") Copolymer, copolymer of TFE and chlorotrifluoroethylene. Furthermore, the copolymer may further have units based on other comonomers.

作為F聚合物之較佳之具體例,可列舉:低分子量PTFE、改性PTFE、FEP、PFA。再者,低分子量PTFE或改性PTFE中亦包含TFE與極微量之共聚單體(HFP、PAVE、FAE等)之共聚物。 F聚合物較佳為具有TFE單元及官能基者。官能基較佳為含羰基之基、羥基、環氧基、胺基或異氰酸基。官能基可包含於F聚合物中之單元中,亦可包含於聚合物之主鏈之末端基中。作為後者之聚合物,可列舉具有官能基作為源自聚合起始劑、鏈轉移等之末端基之聚合物。又,亦可列舉對F聚合物層表面進行電漿處理或輻射處理而獲得之具有官能基之F聚合物。 具有官能基之F聚合物較佳為具備TFE單元及具有官能基之單元之F聚合物。作為具有官能基之單元,較佳為基於具有含羰基之基、羥基、環氧基、胺基或異氰酸基之單體之單元。Preferred specific examples of the F polymer include low molecular weight PTFE, modified PTFE, FEP, and PFA. Furthermore, low molecular weight PTFE or modified PTFE also contains copolymers of TFE and very small amounts of comonomers (HFP, PAVE, FAE, etc.). The F polymer preferably has a TFE unit and a functional group. The functional group is preferably a carbonyl group-containing group, a hydroxyl group, an epoxy group, an amine group or an isocyanate group. The functional group may be contained in the unit in the F polymer, or may be contained in the terminal group of the main chain of the polymer. As the latter polymer, a polymer having a functional group as a terminal group derived from a polymerization initiator, chain transfer or the like can be cited. In addition, an F polymer having a functional group obtained by performing plasma treatment or radiation treatment on the surface of the F polymer layer can also be cited. The F polymer having a functional group is preferably an F polymer having a TFE unit and a unit having a functional group. The unit having a functional group is preferably a unit based on a monomer having a carbonyl group-containing group, a hydroxyl group, an epoxy group, an amine group, or an isocyanate group.

作為具有含羰基之基之單體,較佳為具有酸酐殘基之環狀單體、具有羧基之單體、乙烯酯及(甲基)丙烯酸酯,更佳為具有酸酐殘基之環狀單體。特佳為伊康酸酐、檸康酸酐、5-降𦯉烯-2,3-二羧酸酐(別稱:雙環庚烯二甲酸酐)及順丁烯二酸酐。 作為具有官能基之F聚合物之較佳之具體例,可列舉具有TFE單元,HFP單元、PAVE單元或FAE單元,及具有官能基之單元之F聚合物。 作為PAVE,可列舉:CF2 =CFOCF3 、CF2 =CFOCF2 CF3 、CF2 =CFOCF2 CF2 CF3 、CF2 =CFOCF2 CF2 CF2 CF3 、CF2 =CFO(CF2 )8 F。 作為FAE,可列舉:CH2 =CH(CF2 )2 F、CH2 =CH(CF2 )3 F、CH2 =CH(CF2 )4 F、CH2 =CF(CF2 )3 H、CH2 =CF(CF2 )4 H。 上述F聚合物相對於構成聚合物之全部單元,較佳為分別具有90~99莫耳%之TFE單元,0.5~9.97莫耳%之HFP單元、PAVE單元或FAE單元,0.01~3莫耳%之具有官能基之單元。作為上述F聚合物之具體例,可列舉:國際公開第2018/16644號中所記載之聚合物。The monomer having a carbonyl group-containing group is preferably a cyclic monomer having an acid anhydride residue, a monomer having a carboxyl group, vinyl ester and (meth)acrylate, and more preferably a cyclic monomer having an acid anhydride residue body. Particularly preferred are itaconic anhydride, citraconic anhydride, 5-norene-2,3-dicarboxylic anhydride (another name: bicycloheptene dicarboxylic anhydride) and maleic anhydride. As a preferable specific example of the F polymer having a functional group, an F polymer having a TFE unit, a HFP unit, a PAVE unit or an FAE unit, and a unit having a functional group can be cited. Examples of PAVE include: CF 2 =CFOCF 3 , CF 2 =CFOCF 2 CF 3 , CF 2 =CFOCF 2 CF 2 CF 3 , CF 2 =CFOCF 2 CF 2 CF 2 CF 3 , CF 2 =CFO(CF 2 ) 8 F. Examples of FAE include: CH 2 =CH(CF 2 ) 2 F, CH 2 =CH(CF 2 ) 3 F, CH 2 =CH(CF 2 ) 4 F, CH 2 =CF(CF 2 ) 3 H, CH 2 =CF(CF 2 ) 4 H. The above-mentioned F polymer preferably has 90-99 mol% of TFE units, 0.5-9.97 mol% of HFP units, PAVE units or FAE units, and 0.01-3 mol% of all units constituting the polymer. The units with functional groups. As a specific example of the above-mentioned F polymer, the polymer described in International Publication No. 2018/16644 can be cited.

層F之厚度較佳為1~38 μm以下。上述厚度更佳為2 μm以上。上述厚度較佳為35 μm以下,更佳為30 μm以下。於該情形時,易抑制加熱時之積層體之尺寸變化(翹曲等)及界面剝離,且更加提高其耐熱性。進而,若層F之厚度為1 μm以上,則無論層P之構成如何,印刷基板於高頻區域中之傳輸損失均大幅地得到改善。若層F之厚度為上限值以下,則尤其易抑制加熱時之積層體之尺寸變化(翹曲等)及界面剝離。The thickness of the layer F is preferably 1 to 38 μm or less. The above-mentioned thickness is more preferably 2 μm or more. The above-mentioned thickness is preferably 35 μm or less, more preferably 30 μm or less. In this case, it is easy to suppress the dimensional change (warpage, etc.) and interface peeling of the laminate during heating, and further improve its heat resistance. Furthermore, if the thickness of the layer F is 1 μm or more, regardless of the configuration of the layer P, the transmission loss of the printed circuit board in the high-frequency region is greatly improved. If the thickness of the layer F is equal to or less than the upper limit, it is particularly easy to suppress the dimensional change (warpage, etc.) of the laminate during heating and interfacial peeling.

作為本發明之積層體之具體構成,可列舉如下積層體:最外層之至少一層為銅箔層,且於上述層P之兩面存在有層F,各層F之至少一部分與層P之至少一部分接觸。更加具體而言,可列舉:具有銅箔層/層F/層P/層F之構成之積層體、及具有銅箔層/層F/層P/層F/銅箔層之構成之積層體。 較佳為上述構成中之銅箔層之厚度為3~25 μm,層F之厚度分別獨立為2~30 μm,層P之厚度較佳為10~100 μm,層F之厚度相對於銅箔層之厚度之比較佳為0.5~5,上述層P之厚度相對於層F之厚度之比較佳為1~50。 又,上述層P較佳為由表面經電漿處理之mPI膜所形成之層。 又,上述層F較佳為熱熔融性之F聚合物之層。上述層F亦可為由積層前其表面經電漿處理之F聚合物之層所形成之層。The specific structure of the laminate of the present invention includes the following laminates: at least one of the outermost layers is a copper foil layer, and layers F are present on both sides of the layer P, and at least a part of each layer F is in contact with at least a part of the layer P . More specifically, a laminate having a structure of copper foil layer/layer F/layer P/layer F and a laminate having a structure of copper foil layer/layer F/layer P/layer F/copper foil layer can be cited . Preferably, the thickness of the copper foil layer in the above configuration is 3-25 μm, the thickness of the layer F is independently 2-30 μm, the thickness of the layer P is preferably 10-100 μm, and the thickness of the layer F is relative to that of the copper foil The ratio of the thickness of the layers is preferably 0.5-5, and the ratio of the thickness of the above-mentioned layer P to the thickness of the layer F is preferably 1-50. In addition, the above-mentioned layer P is preferably a layer formed of an mPI film whose surface has been subjected to plasma treatment. In addition, the above-mentioned layer F is preferably a layer of hot-melt F polymer. The above-mentioned layer F may also be a layer formed by a layer of F polymer whose surface has been subjected to plasma treatment before lamination.

本發明中之於至少一面存在有層F之層P(即,單面與層F接觸之層P或兩面與層F接觸之層P)於常溫常濕之環境下,電氣特性之長期持續性優異。 作為本發明之積層體,較佳為於使其在24℃且相對濕度50%之氛圍中保持24小時之情形時,與層F接觸之層P之介電常數為2.8以下之積層體,更佳為2.7以下之積層體。再者,上述介電常數之下限值較佳為2。 又,較佳為於使本發明之積層體在24℃且相對濕度50%之氛圍中保持24小時之情形時,與層F接觸之層P之介電損耗正切為0.004以下之積層體,更佳為0.003以下之積層體。再者,上述介電損耗正切之下限值較佳為0.0001。In the present invention, the layer P with layer F on at least one side (ie, the layer P with one side in contact with the layer F or the layer P with both sides in contact with the layer F) in the environment of normal temperature and humidity, the long-term continuity of electrical properties Excellent. As the laminate of the present invention, it is preferably a laminate having a dielectric constant of 2.8 or less when the layer P in contact with the layer F is kept in an atmosphere of 24°C and a relative humidity of 50% for 24 hours. Preferably, it is a laminate of 2.7 or less. Furthermore, the lower limit of the above-mentioned dielectric constant is preferably 2. In addition, it is preferable that when the laminate of the present invention is kept in an atmosphere of 24° C. and a relative humidity of 50% for 24 hours, the dielectric loss tangent of the layer P in contact with the layer F is a laminate of 0.004 or less. Preferably, it is a laminate of 0.003 or less. Furthermore, the lower limit of the above-mentioned dielectric loss tangent is preferably 0.0001.

又,本發明中之層P於高溫多濕之環境下,電氣特性之長期持續性亦優異。作為本發明之積層體,較佳為於使其在85℃且相對濕度85%之氛圍中保持72小時之情形時,與層F接觸之層P之介電常數為2.8以下之積層體,更佳為2.7以下之積層體。再者,上述介電常數之下限值較佳為2。 又,較佳為於使本發明之積層體在85℃且相對濕度85%之氛圍中保持72小時之情形時,與層F接觸之層P之介電損耗正切為0.007以下之積層體,更佳為0.006以下之積層體。再者,上述介電損耗正切之下限值較佳為0.0001。In addition, the layer P in the present invention is also excellent in long-term durability of electrical characteristics under a high temperature and high humidity environment. As the laminated body of the present invention, it is preferable that the dielectric constant of the layer P in contact with the layer F is 2.8 or less when it is kept in an atmosphere of 85°C and 85% relative humidity for 72 hours, and more Preferably, it is a laminate of 2.7 or less. Furthermore, the lower limit of the above-mentioned dielectric constant is preferably 2. In addition, it is preferable that when the laminate of the present invention is kept in an atmosphere of 85°C and a relative humidity of 85% for 72 hours, the dielectric loss tangent of the layer P in contact with the layer F is less than 0.007, and more Preferably, it is a laminate of 0.006 or less. Furthermore, the lower limit of the above-mentioned dielectric loss tangent is preferably 0.0001.

本發明之積層體較佳為如下述般製造:利用熱壓法,使具有金屬箔層及層F之附有樹脂之金屬箔與作為層P之mPI膜以附有樹脂之金屬箔之層F與mPI膜對向之方式熔合。 此時,mPI膜中之非熱塑性聚醯亞胺於320℃下之拉伸彈性模數較佳為0.2 GPa以上,較佳為0.4 GPa以上。又,該拉伸彈性模數較佳為10 GPa以下,更佳為5 GPa以下。若非熱塑性聚醯亞胺之拉伸彈性模數為上述下限以上,則熱壓後進行冷卻時,層F之收縮易因層P之彈性而有效地得到緩和。其結果為,更加不易於積層體產生皺褶,而易獲得表面平滑性等物性更加優異之積層體。上述傾向於mPI膜中之非熱塑性聚醯亞胺之醯亞胺基密度或玻璃轉移溫度較低情形時變得顯著。又,非熱塑性聚醯亞胺之拉伸彈性模數若為上述上限以下,則積層體之柔軟性易進一步優異。The laminate of the present invention is preferably manufactured as follows: using a hot pressing method, a metal foil with a metal foil layer and a layer F is made of a resin-attached metal foil and an mPI film as the layer P is a layer F of the metal foil with a resin It is fused in a way opposite to the mPI film. At this time, the tensile elastic modulus of the non-thermoplastic polyimide in the mPI film at 320° C. is preferably 0.2 GPa or more, preferably 0.4 GPa or more. In addition, the tensile modulus of elasticity is preferably 10 GPa or less, more preferably 5 GPa or less. If the tensile modulus of non-thermoplastic polyimide is more than the above lower limit, when cooling is performed after hot pressing, the shrinkage of the layer F is likely to be effectively alleviated due to the elasticity of the layer P. As a result, wrinkles are less likely to occur in the laminate, and it is easier to obtain a laminate having more excellent physical properties such as surface smoothness. The above tendency becomes remarkable when the density of the non-thermoplastic polyimide group in the mPI film or the glass transition temperature is low. In addition, if the tensile elastic modulus of the non-thermoplastic polyimide is less than or equal to the above upper limit, the flexibility of the laminate is likely to be more excellent.

作為上述附有樹脂之金屬箔之製造方法,可列舉將F聚合物之粉末分散液塗佈於金屬箔之表面而進行製造之方法。具體而言,可列舉以下方法:將包含含有F聚合物之粉末(以下,亦記載為「F粉末」)、溶劑、及分散劑之粉末分散液塗佈於金屬箔之表面,於100~300℃之溫度區域(以下,亦記載為「保持溫度」)下保持金屬箔層,去除溶劑,並且於超過上述溫度區域之溫度區域下對F聚合物進行焙燒,於金屬箔之表面形成層F。As a manufacturing method of the metal foil with resin mentioned above, the method of apply|coating the powder dispersion liquid of F polymer on the surface of a metal foil and manufacturing is mentioned. Specifically, the following method can be cited: a powder dispersion containing a powder containing F polymer (hereinafter, also referred to as "F powder"), a solvent, and a dispersant is applied to the surface of the metal foil, and then applied to the surface of the metal foil at 100 to 300 The metal foil layer is maintained in a temperature range of ℃ (hereinafter, also referred to as "holding temperature"), the solvent is removed, and the F polymer is fired in a temperature range exceeding the above temperature range to form a layer F on the surface of the metal foil.

F粉末較佳為以F聚合物作為主成分,較佳為含有80~100質量%之F聚合物。 F粉末之D50較佳為0.05~6.0 μm,更佳為0.2~3.0 μm。 F粉末之D90較佳為0.3~8 μm,更佳為0.8~5 μm。 藉由使F粉末之D50或D90為上述範圍內,從而使得F粉末之流動性與分散性變得良好,易進一步提高層F之介電特性或耐熱性。 溶劑較佳為不會瞬間性地揮發,而於保持於上述保持溫度時揮發之化合物,更佳為沸點125~250℃之化合物。 作為溶劑,較佳為1-丁醇、1-甲氧基-2-丙醇、3-甲氧基-N,N-二甲基丙醯胺、3-丁氧基-N,N-二甲基丙醯胺、N-甲基-2-吡咯啶酮、γ-丁內酯、環己酮及環戊酮。The F powder preferably contains F polymer as a main component, and preferably contains 80 to 100% by mass of F polymer. The D50 of the F powder is preferably 0.05 to 6.0 μm, more preferably 0.2 to 3.0 μm. The D90 of the F powder is preferably 0.3-8 μm, more preferably 0.8-5 μm. By making the D50 or D90 of the F powder within the above range, the fluidity and dispersibility of the F powder becomes good, and the dielectric properties or heat resistance of the layer F can be further improved. The solvent is preferably a compound that does not volatilize instantaneously, but a compound that volatilizes when maintained at the above-mentioned holding temperature, more preferably a compound with a boiling point of 125 to 250°C. As the solvent, 1-butanol, 1-methoxy-2-propanol, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-di Methyl propanamide, N-methyl-2-pyrrolidone, γ-butyrolactone, cyclohexanone and cyclopentanone.

分散劑係具有親水性基與疏水性基之化合物,較佳為氟系分散劑、矽酮系分散劑或乙炔系分散劑,更佳為氟系分散劑。分散劑較佳為非離子性。 作為氟系分散劑,較佳為氟單醇、氟聚醇、氟矽酮及氟聚醚。 氟聚醇較佳為氟(甲基)丙烯酸酯、與具有羥基或聚氧伸烷基羥基之(甲基)丙烯酸酯之共聚物,更佳為具有聚氟烷基或聚氟烯基之(甲基)丙烯酸酯、與具有聚氧基伸烷基單醇基之(甲基)丙烯酸酯之共聚物。 作為氟矽酮,較佳為於側鏈之一部分含有C-F鍵之聚有機矽氧烷。 作為氟聚醚,較佳為聚氧基伸烷基烷基醚之氫原子之一部分被取代為氟原子而成之化合物。The dispersant is a compound having a hydrophilic group and a hydrophobic group, and is preferably a fluorine-based dispersant, a silicone-based dispersant or an acetylene-based dispersant, and more preferably a fluorine-based dispersant. The dispersant is preferably nonionic. As the fluorine-based dispersant, fluoromonool, fluoropolyol, fluorosilicone, and fluoropolyether are preferred. The fluoropolyol is preferably a copolymer of fluorine (meth)acrylate and (meth)acrylate having a hydroxyl group or a polyoxyalkylene hydroxyl group, and more preferably a copolymer having a polyfluoroalkyl group or a polyfluoroalkenyl group ( A copolymer of meth)acrylate and (meth)acrylate having a polyoxyalkylene monool group. The fluorosilicone is preferably a polyorganosiloxane containing a C-F bond in a part of the side chain. The fluoropolyether is preferably a compound in which a part of the hydrogen atoms of the polyoxyalkylene alkyl ether is substituted with fluorine atoms.

粉末分散液亦可含有F粉末、溶劑及分散劑以外之成分。作為其他成分,可列舉:觸變性賦予劑、消泡劑、無機填料、反應性烷氧基矽烷、脫水劑、塑化劑、耐候劑、抗氧化劑、熱穩定劑、潤滑劑、抗靜電劑、增白劑、著色劑、導電劑、脫模劑、表面處理劑、黏度調節劑、阻燃劑等。又,粉末分散液亦可含有F聚合物以外之樹脂成分(熱固性樹脂、熱塑性樹脂等)。 粉末分散液中之F粉末之比率較佳為5~60質量%。 粉末分散液中之分散劑之比率較佳為0.1~30質量%。 粉末分散液中之溶劑之比率較佳為15~65質量%。The powder dispersion may also contain components other than F powder, solvent and dispersant. Examples of other components include: thixotropy imparting agents, defoamers, inorganic fillers, reactive alkoxysilanes, dehydrating agents, plasticizers, weathering agents, antioxidants, heat stabilizers, lubricants, antistatic agents, Brighteners, colorants, conductive agents, mold release agents, surface treatment agents, viscosity regulators, flame retardants, etc. In addition, the powder dispersion may contain resin components (thermosetting resins, thermoplastic resins, etc.) other than the F polymer. The ratio of the F powder in the powder dispersion is preferably 5 to 60% by mass. The ratio of the dispersant in the powder dispersion is preferably 0.1 to 30% by mass. The ratio of the solvent in the powder dispersion is preferably 15 to 65% by mass.

作為塗佈方法,可列舉:噴霧法、輥塗法、旋轉塗佈法、凹版塗佈法、微凹版塗佈法、凹版膠版法、刮塗法、接觸塗佈法、棒式塗佈法、模嘴塗佈法、噴注式邁爾棒(fountain meyer bar)法、狹縫式模嘴塗佈法。 亦可於進行塗佈後,在將附有濕膜之金屬箔供於保持溫度之前,將其加熱至未達上述溫度區域之溫度,調整濕膜之狀態。調整只要於溶劑不會完全揮發之溫度下進行即可。Examples of coating methods include: spray method, roll coating method, spin coating method, gravure coating method, micro gravure coating method, gravure offset method, knife coating method, contact coating method, bar coating method, Die nozzle coating method, fountain Meyer bar method, slit die nozzle coating method. It is also possible to adjust the state of the wet film by heating the metal foil with the wet film to the temperature below the above-mentioned temperature range before supplying the metal foil with the wet film to the holding temperature after coating. The adjustment can be carried out at a temperature where the solvent will not completely volatilize.

若將粉末分散液塗佈於金屬箔之表面並保持於保持溫度,則一面進行溶劑之揮發與分散劑之分解,一面形成F粉末密集地堆積而成之平滑性較高之覆膜。此時,認為分散劑變得易被F粉末彈開,變得易於表面流動。即,亦認為藉由該保持而形成分散劑於表面發生偏析之狀態。 保持氛圍可為常壓下、減壓下之任一狀態。又,保持時之氛圍亦可為氧氣等氧化性氛圍;氫氣等還原性氛圍;氦氣、氖氣、氬氣、氮氣等惰性氛圍之任一氛圍。 保持溫度較佳為200~300℃之溫度區域。於該範圍內,溶劑被去除,並且有效地進行分散劑之部分性之分解及流動,更加易使分散劑發生表面偏析。 保持於保持溫度之時間較佳為0.1~10分鐘,特佳為0.5~5分鐘。If the powder dispersion is applied to the surface of the metal foil and kept at the holding temperature, while volatilizing the solvent and decomposing the dispersant, a smooth coating formed by dense accumulation of F powder is formed. At this time, it is considered that the dispersant becomes easy to be bounced off by the F powder and becomes easy to flow on the surface. That is, it is considered that the state in which the dispersant segregates on the surface is formed by this holding. The maintaining atmosphere can be either under normal pressure or under reduced pressure. In addition, the atmosphere during holding may be any of an oxidizing atmosphere such as oxygen; a reducing atmosphere such as hydrogen; and an inert atmosphere such as helium, neon, argon, and nitrogen. The holding temperature is preferably a temperature range of 200 to 300°C. Within this range, the solvent is removed, and the partial decomposition and flow of the dispersant are effectively carried out, making it easier to cause surface segregation of the dispersant. The time for keeping at the holding temperature is preferably 0.1 to 10 minutes, particularly preferably 0.5 to 5 minutes.

附有樹脂之金屬箔之製造中,進而較佳為於超過保持溫度之溫度區域(以下,亦記載為「焙燒溫度」)下對F聚合物進行焙燒,而於金屬箔之表面形成層F。 焙燒時,由於在F粉末密集地堆積,分散劑有效地發生表面偏析之狀態下進行F聚合物之熔合,故形成平滑性及熔合性優異之層F。 再者,若粉末分散液含有熱熔融性樹脂,則形成含有F聚合物與溶解性樹脂之混合物之層F,若粉末分散液含有熱固性樹脂,則形成含有F聚合物與熱固性樹脂之硬化物之層F。 作為焙燒之方法,可列舉:使用烘箱之方法、使用通風乾燥爐之方法、照射紅外線等熱線之方法等。為了提高層F之表面之平滑性,亦可利用加熱板、加熱輥等進行加壓。作為焙燒之方法,就可於短時間內進行焙燒,且遠紅外線爐相對小型之點而言,較佳為照射遠紅外線之方法。焙燒時,亦可組合紅外線加熱與熱風加熱。In the production of the metal foil with resin, it is more preferable to fire the F polymer in a temperature region exceeding the holding temperature (hereinafter, also referred to as "baking temperature") to form a layer F on the surface of the metal foil. During firing, since the F powder is densely accumulated and the dispersant is effectively segregated on the surface, the F polymer is fused, so that a layer F with excellent smoothness and fusion properties is formed. Furthermore, if the powder dispersion contains a hot-melt resin, a layer F containing a mixture of F polymer and a soluble resin will be formed, and if the powder dispersion contains a thermosetting resin, a hardened product containing F polymer and thermosetting resin will be formed. Layer F. As the method of baking, there can be mentioned: the method of using an oven, the method of using a ventilated drying furnace, the method of irradiating hot rays such as infrared rays, etc. In order to improve the smoothness of the surface of the layer F, a heating plate, a heating roller, etc. can also be used for pressure. As the method of firing, firing can be carried out in a short time, and the method of irradiating far infrared rays is preferable because the far-infrared furnace is relatively small. During baking, infrared heating and hot air heating can also be combined.

焙燒時之氛圍可為常壓下、減壓下之任一狀態。又,焙燒時之氛圍亦可為氧氣等氧化性氣體氛圍;氫氣等還原性氣體氛圍;氦氣、氖氣、氬氣、氮氣等惰性氣體氛圍之任一氛圍,較佳為惰性氣體氛圍。 作為焙燒時之氛圍,較佳為含有惰性氣體,且氧氣濃度較低者,較佳為含有氮氣,且氧氣濃度(體積基準)為300 ppm以下之氛圍。 焙燒溫度較佳為超過300℃,特佳為330~380℃。於該情形時,F聚合物更易形成緻密之層F。 保持於焙燒溫度之時間較佳為30秒~5分鐘。The atmosphere during firing can be either under normal pressure or under reduced pressure. In addition, the atmosphere during the firing may be any of an oxidizing gas atmosphere such as oxygen; a reducing gas atmosphere such as hydrogen; and an inert gas atmosphere such as helium, neon, argon, and nitrogen, and preferably an inert gas atmosphere. The atmosphere at the time of firing is preferably an atmosphere that contains inert gas and has a low oxygen concentration, and preferably contains nitrogen and has an oxygen concentration (volume basis) of 300 ppm or less. The firing temperature is preferably more than 300°C, particularly preferably 330 to 380°C. In this case, the F polymer is easier to form a dense layer F. The time for keeping at the firing temperature is preferably 30 seconds to 5 minutes.

附有樹脂之金屬箔之製造中,為了抑制層F之線膨脹係數,或進而改善層F之熔合性,亦可對所獲得之附有樹脂之金屬箔之層F之表面進行表面處理。 作為表面處理,可列舉:退火處理、電暈放電處理、大氣壓電漿處理、真空電漿處理、紫外線臭氧處理、準分子處理、化學蝕刻、矽烷偶合處理、微粗面化處理等。 退火處理中之溫度較佳為80~190℃。退火處理時之壓力較佳為0.001~0.030 MPa。退火處理之時間較佳為10~300分鐘。 作為電漿處理時之電漿照射裝置,可列舉:高頻感應方式、電容耦合電極方式、電暈放電電極-電漿噴射方式、平行板型、遙距電漿型、大氣壓電漿型、ICP(Inductively Coupled Plasma,感應耦合電漿)型高密度電漿型等。 作為電漿處理中所使用之氣體,可列舉:氬氣;氫氣與氮氣之混合氣體;氫氣、氮氣與氬氣之混合氣體。於該情形時,藉由調整層F之表面粗糙度,從而易形成微細凹凸。In the manufacture of the resin-attached metal foil, in order to suppress the linear expansion coefficient of the layer F, or to improve the fusion of the layer F, the surface of the obtained resin-attached metal foil layer F can also be surface-treated. Examples of surface treatments include annealing treatment, corona discharge treatment, atmospheric pressure plasma treatment, vacuum plasma treatment, ultraviolet ozone treatment, excimer treatment, chemical etching, silane coupling treatment, micro-roughening treatment, and the like. The temperature in the annealing treatment is preferably 80 to 190°C. The pressure during the annealing treatment is preferably 0.001 to 0.030 MPa. The annealing treatment time is preferably 10 to 300 minutes. Plasma irradiation devices for plasma treatment include: high frequency induction method, capacitive coupling electrode method, corona discharge electrode-plasma jet method, parallel plate type, remote plasma type, atmospheric piezoelectric plasma type, ICP (Inductively Coupled Plasma) type high-density plasma type, etc. As the gas used in the plasma processing, argon; a mixed gas of hydrogen and nitrogen; a mixed gas of hydrogen, nitrogen and argon can be cited. In this case, by adjusting the surface roughness of the layer F, it is easy to form fine irregularities.

mPI膜較佳為如下述般製造:使聚醯亞胺前驅物(聚醯胺酸)之溶液進行環化反應,獲得凝膠膜,對該凝膠膜進行乾燥處理,進而進行熱處理。再者,藉由乾燥及熱處理,進行聚醯胺酸之醯亞胺化。 作為環化反應時之方法,可採用:將溶液澆鑄為膜狀,加熱而進行環化反應,獲得凝膠膜之方法(熱閉環法);或於溶液中混合觸媒及脫水劑,化學性地進行環化反應,獲得凝膠膜之方法(化學閉環法)。 作為觸媒,可列舉:三甲基胺、三乙烯二胺、二甲基苯胺、異喹啉、吡啶、β-甲基吡啶。 作為脫水劑,可列舉:乙酸酐、丙酸酐、丁酸酐、苯甲酸酐。 觸媒及脫水劑之使用量分別相對於聚醯胺酸之醯胺基(或羧基)1莫耳,較佳為1.5~10莫耳。The mPI film is preferably produced as follows: a solution of a polyimide precursor (polyamide acid) is subjected to a cyclization reaction to obtain a gel film, the gel film is dried, and then heat treated. Furthermore, by drying and heat treatment, the imidization of polyamide acid is carried out. As a method for the cyclization reaction, it can be used: casting the solution into a film, heating to carry out the cyclization reaction to obtain a gel film (thermal closed loop method); or mixing the catalyst and dehydrating agent in the solution, chemical The method of carrying out the cyclization reaction to obtain the gel film (chemical closed loop method). Examples of the catalyst include trimethylamine, triethylenediamine, dimethylaniline, isoquinoline, pyridine, and β-picoline. Examples of the dehydrating agent include acetic anhydride, propionic anhydride, butyric anhydride, and benzoic anhydride. The usage amount of the catalyst and the dehydrating agent is 1 mol, preferably 1.5-10 mol with respect to the amide group (or carboxyl) of the polyamide acid.

所獲得之凝膠膜經乾燥處理、熱處理。 乾燥處理時之溫度較佳為220~300℃。 又,乾燥就抑制膜寬度方向之乾燥溫度不均之觀點而言,較佳為將乾燥溫度不均設為20℃以下。又,亦可對進行乾燥處理後之凝膠膜實施延伸處理。 熱處理時之溫度更佳為300~550℃。 對於mPI膜,亦可進而進行退火處理、電暈處理、電漿處理、粗面化處理、矽烷偶合劑處理等表面處理。The obtained gel film is dried and heat-treated. The temperature during the drying treatment is preferably 220 to 300°C. In addition, from the viewpoint of suppressing the unevenness of the drying temperature in the film width direction, it is preferable to set the unevenness of the drying temperature to 20° C. or less. In addition, it is also possible to perform a stretching treatment on the gel film after the drying treatment. The temperature during the heat treatment is more preferably 300 to 550°C. The mPI film may be further subjected to surface treatments such as annealing treatment, corona treatment, plasma treatment, roughening treatment, and silane coupling agent treatment.

使附有樹脂之金屬箔與mPI膜積層之熱壓時之加壓溫度較佳為300℃~350℃,更佳為310℃~330℃。於該範圍內,可抑制mPI膜之熱變形,且使層F與mPI膜牢固地熔合。 熱壓時之真空度較佳為20 kPa以下。於該範圍內,可抑制氣泡混入至積層體中之金屬箔層、層F、層P之各界面、與因氧化導致之劣化。 又,進行熱壓時較佳為於到達至上述真空度後進行升溫。於該情形時,由於可於層F軟化之前之狀態,即產生一定程度之流動性、密接性之前之狀態下進行壓接,故能夠防止氣泡之產生。 熱壓時之加壓壓力較佳為0.2~10 MPa。於該範圍內,可抑制PI膜破損,且使層F與mPI膜牢固地熔合。The pressing temperature during the hot pressing of the resin-coated metal foil and the mPI film is preferably 300°C to 350°C, more preferably 310°C to 330°C. Within this range, the thermal deformation of the mPI film can be suppressed, and the layer F and the mPI film can be firmly fused. The degree of vacuum during hot pressing is preferably 20 kPa or less. Within this range, mixing of bubbles into the metal foil layer, layer F, and layer P in the laminate, and degradation due to oxidation can be suppressed. Moreover, when performing hot pressing, it is preferable to raise the temperature after reaching the above-mentioned degree of vacuum. In this case, since the pressure bonding can be performed in the state before the layer F is softened, that is, the state before a certain degree of fluidity and adhesion is generated, the generation of bubbles can be prevented. The pressurizing pressure during hot pressing is preferably 0.2-10 MPa. Within this range, damage to the PI film can be suppressed, and the layer F and the mPI film can be firmly fused.

本發明之積層體係電氣特性、耐化學品性(耐蝕刻性)、耐熱性等物性優異之具有層F與層P之覆金屬箔積層體,可用作軟性印刷基板或剛性印刷基板之材料。 利用以下方法可由本發明之積層體製造印刷基板:對本發明之積層體之金屬箔層進行蝕刻處理,而加工成特定之圖案之導體電路(傳輸電路)之方法;或利用電解鍍覆法(半加成法(SAP法,Semi-Additive Process)、改良型半加成法(MSAP法)等)將本發明之積層體之金屬箔層加工成傳輸電路之方法。The laminate system of the present invention has excellent electrical properties, chemical resistance (etch resistance), heat resistance, and other physical properties such as a metal-clad laminate with layer F and layer P, which can be used as a material for flexible printed circuit boards or rigid printed circuit boards. A printed circuit board can be manufactured from the laminate of the present invention by the following methods: the metal foil layer of the laminate of the present invention is etched and processed into a conductive circuit (transmission circuit) of a specific pattern; or by the electrolytic plating method (semi- The additive method (SAP method, Semi-Additive Process), modified semi-additive method (MSAP method), etc.) is a method for processing the metal foil layer of the laminate of the present invention into a transmission circuit.

本發明之印刷基板係具有層P、存在於上述層P之至少一面之層F、及存在於上述層F之至少一面之傳輸電路者,且上述層P之吸水率未達1.5%,上述層P之線膨脹係數之絕對值為25 ppm/℃以下。 本發明之印刷基板中之構成、層P及層F之種類等與本發明之積層體中之內容包含較佳之範圍在內均相同。 作為本發明之印刷基板之構成,例如可列舉:傳輸電路/層F/層P之構成、傳輸電路/層F/層P/層F之構成、傳輸電路/層F/層P/層F/傳輸電路之構成。The printed circuit board of the present invention has a layer P, a layer F existing on at least one side of the above-mentioned layer P, and a transmission circuit existing on at least one side of the above-mentioned layer F, and the water absorption rate of the above-mentioned layer P is less than 1.5%. The absolute value of the coefficient of linear expansion of P is below 25 ppm/℃. The constitution of the printed circuit board of the present invention, the types of the layer P and the layer F, and the like are the same as the content of the laminate of the present invention, including the preferable range. As the structure of the printed circuit board of the present invention, for example, the structure of the transmission circuit/layer F/layer P, the structure of the transmission circuit/layer F/layer P/layer F, the transmission circuit/layer F/layer P/layer F/ The structure of the transmission circuit.

印刷基板之製造中,亦可於形成傳輸電路後,於傳輸電路上形成層間絕緣膜,並於層間絕緣膜上進而形成傳輸電路。層間絕緣膜例如亦可藉由本發明中之粉末分散液形成。 印刷基板之製造中,亦可使阻焊劑積層於傳輸電路上。阻焊劑可藉由本發明中之粉末分散液形成。 印刷基板之製造中,亦可使覆蓋層膜積層於傳輸電路上。覆蓋層膜亦可藉由本發明中之粉末分散液形成。 作為印刷基板之具體之態樣,可列舉使本發明之積層體或本發明之印刷基板多層化而成之多層印刷電路基板。In the manufacture of the printed circuit board, after the transmission circuit is formed, an interlayer insulating film may be formed on the transmission circuit, and the transmission circuit may be formed on the interlayer insulating film. The interlayer insulating film can also be formed by, for example, the powder dispersion in the present invention. In the manufacture of printed circuit boards, solder resist can also be laminated on the transmission circuit. The solder resist can be formed by the powder dispersion in the present invention. In the manufacture of the printed circuit board, the cover film can also be laminated on the transmission circuit. The cover film can also be formed by the powder dispersion in the present invention. As a specific aspect of the printed circuit board, a multilayer printed circuit board obtained by multilayering the laminate of the present invention or the printed circuit board of the present invention can be cited.

作為多層印刷電路基板之較佳之態樣,可列舉具有1個以上之以下構成之態樣:最外層係層F,且依序具有金屬箔層、層F、層P。 上述態樣中之金屬箔層較佳為其一部分被去除而形成傳輸電路。又,亦可於層F與層P之間存在有金屬箔層之一部分被去除而形成之傳輸電路。 上述態樣之多層印刷電路基板於最外層具有層F,且耐熱性優異,具體而言,即便於250~300℃之高溫下,亦不易發生界面之膨脹或剝離。尤其是於形成傳輸電路之情形時,即,於金屬箔層之一部分被去除而露出之層F與其他層具有接觸面之情形時,上述傾向易變得顯著。認為其原因在於,金屬箔層之表面粗糙度轉印至層F之表面而產生之層F之表面粗糙度於與其他層接觸時表現出投錨效應。其結果為,即便不實施電漿處理等親水化處理,各界面亦牢固地熔合,於進行加熱時亦能夠抑制界面膨脹或界面剝離、尤其是最外層之膨脹或剝離。As a preferable aspect of the multilayer printed circuit board, an aspect having one or more of the following constitutions can be cited: the outermost layer system layer F, and the metal foil layer, the layer F, and the layer P in this order. The metal foil layer in the above aspect is preferably partly removed to form a transmission circuit. In addition, there may be a transmission circuit formed by removing part of the metal foil layer between the layer F and the layer P. The multilayer printed circuit board of the above aspect has the layer F on the outermost layer and is excellent in heat resistance. Specifically, even at a high temperature of 250 to 300° C., the expansion or peeling of the interface is unlikely to occur. Especially when a transmission circuit is formed, that is, when a part of the metal foil layer is removed and the exposed layer F has a contact surface with other layers, the above tendency tends to become significant. It is believed that the reason is that the surface roughness of the metal foil layer is transferred to the surface of the layer F and the surface roughness of the layer F produced by the surface roughness of the layer F exhibits an anchoring effect when it is in contact with other layers. As a result, even if no hydrophilization treatment such as plasma treatment is performed, each interface is firmly fused, and it is possible to suppress interface expansion or interface peeling, especially the expansion or peeling of the outermost layer when heated.

作為多層印刷電路基板之較佳之態樣,亦可列舉具有1個以上之下述構成之態樣:最外層係層P,且依序具有金屬箔層、層F、層P。 上述態樣中之金屬箔層較佳為其一部分被去除而形成傳輸電路。又,亦可於層F與層P之間存在有金屬箔層之一部分被去除而形成之傳輸電路。 上述態樣之多層印刷電路基板中,即便於最外層具有層P,耐熱性亦優異,即便於250~300℃之高溫下,亦不易發生界面之膨脹或剝離。尤其是於形成傳輸電路之情形時,即,於金屬箔層之一部分被去除而露出之層F與其他層具有接觸面之情形時,上述傾向易變得顯著。認為其原因在於,金屬箔層之表面粗糙度轉印至層F之表面而產生之層F之表面粗糙度於與其他層接觸時表現出投錨效應。其結果為,即便不實施電漿處理等親水化處理,各界面亦牢固地熔合,於進行加熱時亦能夠抑制界面膨脹或剝離、尤其是最外層之膨脹或剝離。 該等態樣中之多層印刷電路基板作為耐浮焊性優異之印刷基板有用。As a preferable aspect of the multilayer printed circuit board, an aspect having one or more of the following constitutions can also be cited: the outermost layer system layer P, and the metal foil layer, the layer F, and the layer P in this order. The metal foil layer in the above aspect is preferably partly removed to form a transmission circuit. In addition, there may be a transmission circuit formed by removing part of the metal foil layer between the layer F and the layer P. In the multilayer printed circuit board of the above aspect, even if it has the layer P in the outermost layer, the heat resistance is excellent, and even at a high temperature of 250 to 300° C., expansion or peeling of the interface is unlikely to occur. Especially when a transmission circuit is formed, that is, when a part of the metal foil layer is removed and the exposed layer F has a contact surface with other layers, the above tendency tends to become significant. It is believed that the reason is that the surface roughness of the metal foil layer is transferred to the surface of the layer F and the surface roughness of the layer F produced by the surface roughness of the layer F exhibits an anchoring effect when it is in contact with other layers. As a result, even if no hydrophilization treatment such as plasma treatment is performed, the respective interfaces are firmly fused, and the expansion or peeling of the interface, especially the expansion or peeling of the outermost layer, can be suppressed during heating. The multilayer printed circuit board in these aspects is useful as a printed circuit board having excellent resistance to floating soldering.

以上,對本發明之積層體、印刷基板之製造方法、印刷基板及天線進行了說明,但本發明不受上述實施形態之構成限定。 本發明之積層體、印刷基板及天線於上述實施形態之構成中,可追加其他任意之構成,亦可與發揮同樣功能之任意構成置換。 又,本發明之印刷基板之製造方法於上述實施形態之構成中,可追加其他任意之步驟,亦可與發揮同樣功能之任意步驟置換。 實施例As mentioned above, although the laminated body of this invention, the manufacturing method of a printed circuit board, a printed circuit board, and an antenna were demonstrated, this invention is not limited to the structure of the said embodiment. The laminated body, the printed circuit board, and the antenna of the present invention may be added with any other configuration to the configuration of the above-mentioned embodiment, and may be replaced with any configuration that performs the same function. Moreover, the manufacturing method of the printed circuit board of this invention may add other arbitrary steps to the structure of the said embodiment, and may replace it with arbitrary steps which perform the same function. Example

以下,藉由實施例對本發明詳細地進行說明,但本發明不受該等限定。 單體及溶劑之簡稱表示以下含義。 BPDA:3,3',4,4'-聯苯四羧酸二酐 ODPA:4,4'-氧二鄰苯二甲酸酐 PMDA:均苯四甲酸二酐 PBTA:對伸苯基雙偏苯三酸酯二酐 PDA:對苯二胺 BAPP:2,2'-雙[4-(4-胺基苯氧基)苯基]丙烷 BAPB:4,4'-雙(4-胺基苯氧基)聯苯 PPBA:4,4'-(1,3-伸苯基二亞異丙基)雙苯胺 m-TB:2,2'-二甲基-4,4'-二胺基聯苯 TPE-R:1,3-雙(4-胺基苯氧基)苯 TFE:四氟乙烯 PPVE:全氟丙基乙烯基醚 NAH:5-降𦯉烯-2,3-二羧酸酐(雙環庚烯二甲酸酐) NMP:N-甲基-2-吡咯啶酮Hereinafter, the present invention will be described in detail with examples, but the present invention is not limited to these. The abbreviations of monomer and solvent have the following meanings. BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride ODPA: 4,4'-oxydiphthalic anhydride PMDA: Pyromellitic dianhydride PBTA: p-phenylene bis trimellit dianhydride PDA: p-phenylenediamine BAPP: 2,2'-bis[4-(4-aminophenoxy)phenyl]propane BAPB: 4,4'-bis(4-aminophenoxy)biphenyl PPBA: 4,4'-(1,3-phenylene diisopropylidene) bisaniline m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl TPE-R: 1,3-bis(4-aminophenoxy)benzene TFE: Tetrafluoroethylene PPVE: Perfluoropropyl vinyl ether NAH: 5-norethene-2,3-dicarboxylic acid anhydride (bicycloheptene dicarboxylic acid anhydride) NMP: N-methyl-2-pyrrolidone

[例1(參考例)]非熱塑性聚醯亞胺之膜之製備例 [例1-1]mPI膜1 mPI膜1係非熱塑性聚醯亞胺(玻璃轉移溫度:298℃、醯亞胺基密度:0.34)之未延伸膜,該非熱塑性聚醯亞胺如下述般獲得:選擇BPDA(75莫耳%)、ODPA(15莫耳%)及PMDA(15莫耳%)作為酸酐單體,選擇PDA(70莫耳%)、BAPP(15莫耳%)及BAPB(15莫耳%)作為二胺單體,首先使BPDA及PDA進行溶液聚合,進而追加添加ODPA、PMDA、BAPP及BAPB,使其聚合,利用化學閉環法使其醯亞胺化。[Example 1 (Reference example)] Preparation example of non-thermoplastic polyimide film [Example 1-1] mPI film 1 mPI film 1 is an unstretched film of non-thermoplastic polyimide (glass transition temperature: 298°C, density of amide group: 0.34). The non-thermoplastic polyimide is obtained as follows: select BPDA (75 mol%) , ODPA (15 mol%) and PMDA (15 mol%) as acid anhydride monomers, and PDA (70 mol%), BAPP (15 mol%) and BAPB (15 mol%) as diamine monomers Firstly, BPDA and PDA are solution polymerized, and then ODPA, PMDA, BAPP, and BAPB are added to polymerize them, and then they are imidized by chemical ring-closure method.

[例1-2]mPI膜2 mPI膜2係非熱塑性聚醯亞胺(玻璃轉移溫度:298℃、醯亞胺基密度:0.26)之未延伸膜,該非熱塑性聚醯亞胺如下述般獲得:選擇PMDA(9莫耳%)及BPDA(91莫耳%)作為酸酐單體,選擇m-TB(15莫耳%)及TPE-R(85莫耳%)作為二胺單體,使所有單體進行溶液聚合,利用化學閉環法使其醯亞胺化。[Example 1-2] mPI film 2 mPI film 2 is an unstretched film of non-thermoplastic polyimide (glass transition temperature: 298°C, density of amide group: 0.26). The non-thermoplastic polyimide is obtained as follows: select PMDA (9 mol%) And BPDA (91 mol%) as the acid anhydride monomer, choose m-TB (15 mol%) and TPE-R (85 mol%) as the diamine monomers, so that all monomers are polymerized in solution, and the chemical ring is closed. Method to make its imidization.

[例1-3]mPI膜3 mPI膜3係非熱塑性聚醯亞胺(玻璃轉移溫度:420℃、醯亞胺基密度:0.38)之未延伸膜,該非熱塑性聚醯亞胺如下述般獲得:選擇BPDA(100莫耳%)作為酸酐單體,選擇PDA(100莫耳%)作為二胺單體,使所有單體進行溶液聚合,利用化學閉環法使其醯亞胺化。[Example 1-3] mPI film 3 mPI film 3 is an unstretched film of non-thermoplastic polyimide (glass transition temperature: 420°C, density of amide group: 0.38). The non-thermoplastic polyimide is obtained as follows: select BPDA (100 mol%) As the acid anhydride monomer, PDA (100 mol%) was selected as the diamine monomer, all the monomers were subjected to solution polymerization, and the chemical ring-closure method was used to imidize them.

[例1-4]mPI膜4 mPI膜4係非熱塑性聚醯亞胺(玻璃轉移溫度:268℃、醯亞胺基密度:0.18)之未延伸膜,該非熱塑性聚醯亞胺如下述般獲得:選擇BPDA(9莫耳%)及PBTA(91莫耳%)作為酸酐單體,選擇m-TB(15莫耳%)及PPBA(85莫耳%)作為二胺單體,使所有單體進行溶液聚合,利用化學閉環法使其醯亞胺化。 [例1-5]mPI膜5 非熱塑性聚醯亞胺(SKC Kolon PI公司製造,「FS-200」,玻璃轉移溫度:310℃,醯亞胺基密度:0.25)。 將各膜之物性總結示於表1。[Example 1-4] mPI film 4 mPI film 4 is an unstretched film of non-thermoplastic polyimide (glass transition temperature: 268°C, density of amide group: 0.18). The non-thermoplastic polyimide is obtained as follows: select BPDA (9 mol%) And PBTA (91 mol%) as the acid anhydride monomers, and m-TB (15 mol%) and PPBA (85 mol%) are selected as the diamine monomers, so that all monomers are polymerized in solution, and the chemical ring-closure method is used to make Its imidization. [Example 1-5] mPI film 5 Non-thermoplastic polyimide (manufactured by SKC Kolon PI, "FS-200", glass transition temperature: 310°C, density of imide group: 0.25). Table 1 summarizes the physical properties of each film.

[表1] mPI膜 1 2 3 4 5 厚度[μm] 50 50 50 50 50 使用聚醯亞胺                   玻璃轉移溫度[℃] 298 280 420 250 310    醯亞胺基密度 0.34 0.26 0.38 0.18 0.28 吸水率[%] 1.20 1.00 1.50 0.60 1.00 介電常數 3.1 2.9 3.6 2.7 3.4 介電損耗正切 0.006 0.005 0.010 0.005 0.004 線膨脹係數[ppm/℃] 10 22 12 26 18 拉伸彈性模數[GPa] 0.5 0.1 7 0.5 0.3 [Table 1] mPI film 1 2 3 4 5 Thickness [μm] 50 50 50 50 50 Use polyimide Glass transition temperature [℃] 298 280 420 250 310 Density of imine group 0.34 0.26 0.38 0.18 0.28 Water absorption rate [%] 1.20 1.00 1.50 0.60 1.00 Dielectric constant 3.1 2.9 3.6 2.7 3.4 Dielectric loss tangent 0.006 0.005 0.010 0.005 0.004 Coefficient of linear expansion [ppm/℃] 10 twenty two 12 26 18 Tensile modulus of elasticity [GPa] 0.5 0.1 7 0.5 0.3

再者,各聚醯亞胺及膜之物性利用以下方法進行測定。 <玻璃轉移溫度> 使用動態黏彈性測定裝置(SII Nano Technology公司製造,「DMS6100」),分析聚醯亞胺之膜,將損失彈性模數相對於儲存彈性模數之比即損失正接(tanδ)相對於溫度進行繪圖時,將tanδ為極大值之溫度設為聚醯亞胺之玻璃轉移溫度。 測定條件如下述般設定:樣品測定範圍:寬度9 mm、夾具間距離:20 mm、測定溫度:0℃~440℃、升溫速度:3℃/分鐘、測定氛圍:空氣氛圍、應變振幅:10 μm、測定頻率:5 Hz、最小張力/壓縮力:100 mN、張力/壓縮增益:1.5、力振幅初始值:100 mN。In addition, the physical properties of each polyimide and film were measured by the following methods. <Glass transition temperature> Using a dynamic viscoelasticity measuring device (manufactured by SII Nano Technology, "DMS6100"), analyze the polyimide film, and plot the ratio of the loss elastic modulus to the storage elastic modulus, that is, the loss positive connection (tanδ) versus temperature At this time, the temperature at which tanδ is the maximum value is set as the glass transition temperature of polyimide. The measurement conditions are set as follows: sample measurement range: width 9 mm, distance between clamps: 20 mm, measurement temperature: 0℃~440℃, heating rate: 3℃/min, measurement atmosphere: air atmosphere, strain amplitude: 10 μm , Measuring frequency: 5 Hz, minimum tension/compression force: 100 mN, tension/compression gain: 1.5, initial value of force amplitude: 100 mN.

<線膨脹係數> 使用熱機械分析裝置(SII Nano Technology公司製造,「TMA/SS6100」),使聚醯亞胺之膜(寬度:3 mm、長度:10 mm)以10℃/分鐘自0℃升溫至400℃後,以40℃/分鐘冷卻至10℃,進而以10℃/分鐘自10℃升溫至200℃,求出此時之線膨脹係數。測定負載設為29.4 mN,測定氛圍設為空氣氛圍。 <吸水率> 利用後述方法進行測定。 <拉伸彈性模數> 使用廣域黏彈性測定裝置(RHEOLOGY CO., LTD公司製造,「DVE RHEO SPECTOLER」),測定於320℃下之拉伸彈性模數。測定頻率設為10 Hz。<Linear expansion coefficient> Using a thermomechanical analysis device (manufactured by SII Nano Technology, "TMA/SS6100"), the polyimide film (width: 3 mm, length: 10 mm) was heated from 0°C to 400°C at 10°C/min , Cool down to 10°C at 40°C/min, and then increase the temperature from 10°C to 200°C at 10°C/min, and obtain the linear expansion coefficient at this time. The measurement load was set to 29.4 mN, and the measurement atmosphere was set to air atmosphere. <Water absorption rate> The measurement is performed by the method described later. <Tensile modulus of elasticity> A wide-area viscoelasticity measuring device (manufactured by RHEOLOGY CO., LTD, "DVE RHEO SPECTOLER") was used to measure the tensile modulus of elasticity at 320°C. The measurement frequency is set to 10 Hz.

[例2(參考例)]F聚合物之粉末分散液之製備例 [例2-1]分散液1 分散液1係F聚合物1之粉末分散於NMP而成之分散液,其如下述般獲得:向坩堝中投入依序含有98.0莫耳%、0.1莫耳%、1.9莫耳%之TFE單元、NAH單元及PPVE單元之具有酸酐基之F聚合物1(熔融溫度:300℃)之粉末(D50:2.6 μm、D90:7.1 μm)50質量份、非離子性氟聚醇3質量份、及NMP 47質量份,並向坩堝內投入氧化鋯球,使坩堝以150 rpm轉動1小時。[Example 2 (Reference example)] Preparation example of powder dispersion of F polymer [Example 2-1] Dispersion 1 Dispersion 1 is a dispersion in which powder of F polymer 1 is dispersed in NMP. It is obtained as follows: Put into a crucible a TFE unit containing 98.0 mol%, 0.1 mol%, and 1.9 mol%, 50 parts by mass of powder (D50: 2.6 μm, D90: 7.1 μm) of F polymer 1 (melting temperature: 300°C) having an acid anhydride group of NAH unit and PPVE unit, 3 parts by mass of nonionic fluoropolyol, and NMP 47 parts by mass, zirconia balls were put into the crucible, and the crucible was rotated at 150 rpm for 1 hour.

[例2-2]分散液2 分散液2係F聚合物2之粉末分散於NMP而成之分散液,其如下述般獲得:向坩堝中投入依序含有98.0莫耳%、2.0莫耳%之TFE單元及PPVE單元之不具有官能基之F聚合物2(熔融溫度:305℃)之粉末(D50:3.5 μm、D90:9.2 μm)50質量份、非離子性氟聚醇3質量份、及N-甲基-2-吡咯啶酮(NMP)47質量份,並向坩堝內投入氧化鋯球,使坩堝以150 rpm轉動1小時。[Example 2-2] Dispersion 2 Dispersion 2 is a dispersion in which the powder of F polymer 2 is dispersed in NMP. It is obtained as follows: Put into a crucible sequentially containing 98.0 mol%, 2.0 mol% of TFE units and PPVE units. Functional group F polymer 2 (melting temperature: 305°C) powder (D50: 3.5 μm, D90: 9.2 μm) 50 parts by mass, 3 parts by mass of nonionic fluoropolyol, and N-methyl-2-pyrrole 47 parts by mass of pyridone (NMP), zirconia balls were put into the crucible, and the crucible was rotated at 150 rpm for 1 hour.

[例3(參考例)]附有樹脂之銅箔之製備例 [例3-1]附有樹脂之銅箔1之製備例 利用反向凹版塗佈法,藉由卷對卷方式將分散液1塗敷於電解銅箔1(厚度:18 μm、Rzjis:1.0 μm、Rq:0.21 μm,福田金屬箔粉工業公司製造,「CF-T4X-SV-18」),形成液狀覆膜。繼而,使該液狀覆膜於120℃下通過乾燥爐5分鐘,進行加熱、乾燥,獲得乾燥覆膜。其後,使乾燥覆膜於氮氣烘箱中,於380℃下加熱3分鐘。藉此,獲得於電解銅箔1之表面形成有含有聚合物1之層F1 (厚度:25 μm)之附有樹脂之銅箔1。對電解銅箔1進行蝕刻後測定出之層F1 之吸水率為0.01%。 再者,附有樹脂之銅箔之調整所使用之銅箔之表面粗糙度利用以下方法進行測定。 <銅箔之表面粗糙度> 使用接觸式表面粗糙度計(東京精密公司製造,「SURFCOM NEX001」),分別測定銅箔之表面(無光澤面)之Rzjis值及Rq值。測定端子使用前端半徑2 μm、圓錐(錐角:60°)之端子,臨界值係將λc設為0.8 mm、λs設為2.5 μm,粗糙度曲線之基準長度設為0.8 mm,粗糙度曲線之評價長度設為4.0 mm。[Example 3 (Reference Example)] Preparation Example of Copper Foil with Resin [Example 3-1] Preparation Example of Copper Foil with Resin 1 1 Apply to electrolytic copper foil 1 (thickness: 18 μm, Rzjis: 1.0 μm, Rq: 0.21 μm, manufactured by Fukuda Metal Foil Industry Co., Ltd., "CF-T4X-SV-18") to form a liquid coating. Then, the liquid coating film was passed through a drying oven at 120° C. for 5 minutes to be heated and dried to obtain a dry coating film. After that, the dry film was heated at 380°C for 3 minutes in a nitrogen oven. Thereby, the resin-coated copper foil 1 in which the layer F 1 (thickness: 25 μm) containing the polymer 1 was formed on the surface of the electrolytic copper foil 1 was obtained. The water absorption rate of layer F 1 measured after etching the electrolytic copper foil 1 was 0.01%. In addition, the surface roughness of the copper foil used for the adjustment of the resin-coated copper foil was measured by the following method. <Surface Roughness of Copper Foil> Using a contact surface roughness meter (manufactured by Tokyo Precision Co., Ltd., "SURFCOM NEX001"), the Rzjis and Rq values of the surface (matte surface) of the copper foil were measured. The measuring terminal uses a terminal with a tip radius of 2 μm and a cone (cone angle: 60°). The critical value is set to 0.8 mm and λs to 2.5 μm. The reference length of the roughness curve is set to 0.8 mm. The evaluation length is set to 4.0 mm.

[例3-2]附有樹脂之銅箔2之製備例 使用分散液2,代替分散液1,除此以外,與附有樹脂之銅箔1同樣地進行操作,獲得形成有含有F聚合物2之層F2 (厚度:25 μm)之附有樹脂之銅箔2。對電解銅箔1進行蝕刻後測定出之層F2 之吸水率為0.01%。[Example 3-2] Preparation example of copper foil 2 with resin, except that Dispersion 2 was used instead of Dispersion 1, and the operation was performed in the same manner as copper foil 1 with resin to obtain a polymer containing F 2 layer F 2 (thickness: 25 μm) copper foil 2 with resin. The water absorption rate of layer F 2 measured after etching the electrolytic copper foil 1 was 0.01%.

[例3-3]附有樹脂之銅箔3之製備例 利用反向凹版塗佈法,藉由卷對卷方式將含有10質量%之芳香族性之熱塑性聚醯亞胺之清漆塗敷於電解銅箔1,形成液狀覆膜。繼而,使該液狀覆膜於120℃下通過乾燥爐5分鐘,於200℃下通過乾燥爐10分鐘,進行加熱、乾燥,獲得乾燥覆膜。藉此,獲得於電解銅箔1之表面形成有芳香族性之熱塑性聚醯亞胺之層PI1 (厚度:25 μm)之附有樹脂之銅箔3。對電解銅箔1進行蝕刻後測定出之層PI1 之吸水率為1.5%。 再者,蝕刻後之各層之吸水率利用後述方法進行測定。[Example 3-3] Preparation example of copper foil 3 with resin The reverse gravure coating method was used to coat a varnish containing 10% by mass of aromatic thermoplastic polyimide by a roll-to-roll method The electrolytic copper foil 1 forms a liquid coating. Then, the liquid coating was passed through a drying oven at 120°C for 5 minutes, and at 200°C for 10 minutes, and heated and dried to obtain a dry coating. Thereby, the resin-coated copper foil 3 in which the aromatic thermoplastic polyimide layer PI 1 (thickness: 25 μm) is formed on the surface of the electrolytic copper foil 1 is obtained. The water absorption rate of layer PI 1 measured after etching the electrolytic copper foil 1 was 1.5%. In addition, the water absorption of each layer after etching was measured by the method described later.

[例3-4]附有樹脂之銅箔4之製備例 將銅箔變更為電解銅箔2(厚度:18 μm、Rzjis:1.2 μm、Rq:0.28 μm,三井金屬礦業公司製造,「TQ-M7-VSP-18」),除此以外,與附有樹脂之銅箔1同樣地進行操作,獲得附有樹脂之銅箔4。 [例3-5]附有樹脂之銅箔5之製備例 將銅箔變更為電解銅箔3(厚度:18 μm、Rzjis:0.6 μm、Rq:0.14 μm,三井金屬礦業公司製造,「TQ-M4-VSP-18」),除此以外,與附有樹脂之銅箔1同樣地進行操作,獲得附有樹脂之銅箔5。[Example 3-4] Preparation example of copper foil 4 with resin Changed the copper foil to electrolytic copper foil 2 (thickness: 18 μm, Rzjis: 1.2 μm, Rq: 0.28 μm, manufactured by Mitsui Metal Mining Co., Ltd., "TQ-M7-VSP-18"). In addition, with resin The same operation was performed on the copper foil 1 to obtain a copper foil 4 with resin. [Example 3-5] Preparation example of copper foil 5 with resin The copper foil was changed to electrolytic copper foil 3 (thickness: 18 μm, Rzjis: 0.6 μm, Rq: 0.14 μm, manufactured by Mitsui Metal Mining Co., Ltd., "TQ-M4-VSP-18"). In addition, with resin The same operation was performed on the copper foil 1 to obtain a copper foil 5 with resin.

[例4]積層體之製造例 [例4-1]積層體1之製造例 將附有樹脂之銅箔1以層F1 對向之方式配置於mPI膜1之兩面之各者,進行真空熱壓(加壓溫度:320℃、加壓壓力:2 MPa、加壓時間:2分鐘),獲得具有電解銅箔1(厚度:18 μm)及非熱塑性聚醯亞胺1之層P1 (mPI膜1,厚度:50 μm),進而於層P1 之兩面具有F聚合物1之層F1 (厚度:25 μm)的積層體1。積層體1係具有電解銅箔1/層F1 /層P1 /層F1 /電解銅箔1之構成之積層體。再者,於進行真空熱壓前,mPI膜1之表面於40 kHz之高頻電壓(放電電力密度:300 W・分鐘/m2 )之條件下,藉由使用氬氣95體積%、氫氣5體積%之混合氣體(流量:2000 sccm)之真空電漿處理(真空度:20 Pa),進行表面處理。[Example 4] Manufacturing example of laminated body [Example 4-1] Manufacturing example of laminated body 1 The copper foil 1 with resin is placed on each of the two sides of the mPI film 1 so that the layer F 1 faces each other, and vacuum is performed Hot pressing (pressing temperature: 320℃, pressing pressure: 2 MPa, pressing time: 2 minutes) to obtain a layer P 1 (with electrolytic copper foil 1 (thickness: 18 μm)) and non-thermoplastic polyimide 1 The mPI film 1, thickness: 50 μm), and a laminate 1 having a layer F 1 (thickness: 25 μm) of F polymer 1 on both sides of the layer P 1. The laminate 1 is a laminate having a structure of electrolytic copper foil 1/layer F 1 /layer P 1 /layer F 1 /electrolytic copper foil 1. Furthermore, before vacuum hot pressing, the surface of the mPI film 1 is subjected to a high-frequency voltage of 40 kHz (discharge power density: 300 W·min/m 2 ) by using 95% by volume of argon gas and 5% by volume of hydrogen gas. Vacuum plasma treatment (vacuum degree: 20 Pa) of mixed gas (flow rate: 2000 sccm) of volume%, and surface treatment.

[例4-2]積層體2之製造例 使用附有樹脂之銅箔2代替附有樹脂之銅箔1,除此以外,與例4-1同樣地進行操作,獲得具有電解銅箔1/層F2 /層P1 /層F2 /電解銅箔1之構成之積層體2。 [例4-3]積層體3之製造例 使用mPI膜2代替mPI膜1,除此以外,與例4-1同樣地進行操作,獲得具有電解銅箔1/層F1 /層P2 (mPI膜2)/層F1 /電解銅箔1之構成之積層體3。[Example 4-2] The manufacturing example of the laminate 2 used copper foil 2 with resin instead of copper foil 1 with resin, except that the same procedure as in Example 4-1 was carried out to obtain an electrolytic copper foil 1/ Layer F 2 /Layer P 1 /Layer F 2 /Electrolytic copper foil 1 laminated body 2. [Example 4-3] The manufacturing example of the laminate 3 used the mPI film 2 instead of the mPI film 1, except that the operation was carried out in the same manner as in Example 4-1 to obtain an electrolytic copper foil 1/layer F 1 /layer P 2 ( A laminate 3 composed of mPI film 2)/layer F 1 /electrolytic copper foil 1.

[例4-4]積層體4之製造例 使用mPI膜3代替mPI膜1,除此以外,與例4-1同樣地進行操作,獲得具有電解銅箔1/層F1 /層P3 (mPI膜3)/層F1 /電解銅箔1之構成之積層體4。 [例4-5]積層體5之製造例 使用mPI膜4代替mPI膜1,除此以外,與例4-1同樣地進行操作,獲得具有電解銅箔1/層F1 /層P4 (mPI膜4)/層F1 /電解銅箔1之構成之積層體5。[Example 4-4] The manufacturing example of the laminate 4 used the mPI film 3 instead of the mPI film 1, except that the operation was carried out in the same manner as in Example 4-1 to obtain an electrolytic copper foil 1/layer F 1 /layer P 3 ( A laminate 4 composed of mPI film 3)/layer F 1 /electrolytic copper foil 1. [Example 4-5] The manufacturing example of the laminate 5 used the mPI film 4 instead of the mPI film 1, but the same procedure as in Example 4-1 was carried out to obtain an electrolytic copper foil 1/layer F 1 /layer P 4 ( A laminate 5 composed of mPI film 4)/layer F 1 /electrolytic copper foil 1.

[例4-6]積層體6之製造例 使用附有樹脂之銅箔3代替附有樹脂之銅箔1,除此以外,與例4-1同樣地進行操作,獲得具有電解銅箔1/層PI1 /層P1 /層PI1 /電解銅箔1之構成之積層體6。 [例4-7]積層體7之製造例 使用mPI膜5代替mPI膜1,除此以外,與例4-1同樣地進行操作,獲得具有電解銅箔1/層F1 /層P5 (mPI膜5)/層F1 /電解銅箔1之構成之積層體7。[Example 4-6] The manufacturing example of the laminate 6 used the resin-coated copper foil 3 instead of the resin-coated copper foil 1. Except for this, the same procedure as in Example 4-1 was carried out to obtain an electrolytic copper foil 1/ A laminate 6 composed of layer PI 1 /layer P 1 /layer PI 1 /electrolytic copper foil 1. [Example 4-7] The manufacturing example of the laminate 7 used the mPI film 5 instead of the mPI film 1. The operation was carried out in the same manner as in Example 4-1 except that the electrolytic copper foil 1/layer F 1 /layer P 5 ( A laminate 7 composed of mPI film 5)/layer F 1 /electrolytic copper foil 1.

[例4-8]積層體8之製造例 使用附有樹脂之銅箔4代替附有樹脂之銅箔1,除此以外,與例4-1同樣地進行操作,獲得積層體8。 [例4-9]積層體9之製造例 使用附有樹脂之銅箔5代替附有樹脂之銅箔1,除此以外,與例4-1同樣地進行操作,獲得積層體9。[Example 4-8] Manufacturing example of laminate 8 Except having used the copper foil 4 with resin instead of the copper foil 1 with resin, it carried out similarly to Example 4-1, and obtained the laminated body 8. [Example 4-9] Manufacturing example of laminate 9 Except having used the copper foil 5 with resin instead of the copper foil 1 with resin, it carried out similarly to Example 4-1, and obtained the laminated body 9.

[例5]積層體之評價例 根據以下評價項目對各積層體進行評價。 <剝離強度> 將積層體切成1 cm寬度,以90°之角度、50 mm/分鐘之速度進行剝離,測定剝離強度(kN/m)。 <常態-電氣特性> 藉由蝕刻去除各積層體之銅箔,於100℃下乾燥2小時,製備包含兩面存在層F之層P之測定樣品。使各測定樣品於24℃且相對濕度50%之氛圍下保持24小時後,測定各介電常數(常態-介電常數)及介電損耗正切(常態-介電損耗正切)。 <加濕-電氣特性> 使測定上述電氣特性後之各測定樣品進而於85℃且相對濕度85%之氛圍下保持72小時。於保持後5分鐘以內測定各測定樣品之介電常數(加濕-介電常數)及介電損耗正切(加濕-介電損耗正切)。[Example 5] Evaluation example of laminated body Each laminate was evaluated based on the following evaluation items. <Peel strength> The laminate was cut into a width of 1 cm, and peeled at an angle of 90° at a speed of 50 mm/min, and the peel strength (kN/m) was measured. <Normal State-Electrical Characteristics> The copper foil of each laminate was removed by etching, and dried at 100° C. for 2 hours to prepare a measurement sample including a layer P with layers F on both sides. After keeping each measurement sample in an atmosphere of 24° C. and a relative humidity of 50% for 24 hours, the dielectric constant (normal state-dielectric constant) and dielectric loss tangent (normal state-dielectric loss tangent) were measured. <Humidification-Electrical Characteristics> After measuring the above-mentioned electrical characteristics, each measurement sample was further kept at 85° C. and a relative humidity of 85% for 72 hours. Measure the dielectric constant (humidification-dielectric constant) and dielectric loss tangent (humidification-dielectric loss tangent) of each measurement sample within 5 minutes after holding.

<吸水率> 依據JIS K 7209:2000A之方法進行測定。 首先,藉由蝕刻去除切成10 cm見方之積層體之銅箔,製備試片。其次,使該試片於50℃下乾燥24小時,於乾燥器內冷卻。將此時之試片之質量作為試片之浸漬前質量。 其後,使該經乾燥之試片於23℃下浸漬於純水中24小時。其後,自純水中取出試片,快速地擦拭表面之水分後,將1分鐘以內測定出之質量作為試片之浸漬後質量。求出浸漬前後試片之質量變化率,作為積層體之「吸水率(實測值)」。又,將積層體所具有之各層之吸水率單純地求和而得出之值設為「吸水率(計算值)」。<Water absorption rate> Measure according to the method of JIS K 7209: 2000A. First, the copper foil of the laminate cut into 10 cm squares is removed by etching to prepare a test piece. Next, the test piece was dried at 50°C for 24 hours, and then cooled in a desiccator. The mass of the test piece at this time is taken as the mass of the test piece before immersion. Thereafter, the dried test piece was immersed in pure water at 23°C for 24 hours. After that, the test piece was taken out of the pure water, and the moisture on the surface was quickly wiped off, and the mass measured within 1 minute was taken as the immersed mass of the test piece. Calculate the mass change rate of the test piece before and after immersion and use it as the "water absorption (measured value)" of the laminate. In addition, the value obtained by simply summing the water absorption of each layer of the layered body is referred to as the "water absorption (calculated value)".

<傳輸損失> 於各積層體形成傳輸線路,製成印刷基板。傳輸線路之形成使用微帶線。使用向量網路分析儀(Keysight Technology公司製造,「E8361A」),對印刷基板中之28 GHz之信號進行處理,將通用測試夾具作為探針,測定表示傳輸損失之S21參數。此時,線路之特性阻抗設為50 Ω,印刷基板之傳輸線路之長度設為50 mm,測定傳輸損失。 作為傳輸損失之尺度,將用於表示高頻電子電路或高頻電子零件之特性之電路網參數之一的「S21-Parameter」作為傳輸損失值。關於該值,該值越接近於0,則意味著傳輸損失越小。 將由未浸漬於純水中之積層體所形成之印刷基板之傳輸損失值設為「吸水前 傳輸損失」,將由在23℃下浸漬於純水中24小時後之積層體所形成之印刷基板之傳輸損失值設為「吸水後 傳輸損失」。<Transmission loss> A transmission line is formed on each layered body to produce a printed circuit board. The formation of the transmission line uses a microstrip line. A vector network analyzer (manufactured by Keysight Technology, "E8361A") was used to process the 28 GHz signal in the printed circuit board, and the general test fixture was used as a probe to measure the S21 parameter representing the transmission loss. At this time, the characteristic impedance of the line is set to 50 Ω, and the length of the transmission line of the printed circuit board is set to 50 mm, and the transmission loss is measured. As a measure of transmission loss, "S21-Parameter", which is one of the circuit network parameters used to express the characteristics of high-frequency electronic circuits or high-frequency electronic parts, is used as the transmission loss value. Regarding this value, the closer the value is to 0, the smaller the transmission loss. The transmission loss value of the printed circuit board formed by the laminate that is not immersed in pure water is set as the "transmission loss before water absorption", and the printed circuit board formed by the laminate after being immersed in pure water at 23°C for 24 hours The transmission loss value is set to "transmission loss after water absorption".

<耐浮焊性> 將積層體切割為5 cm見方,於24℃之純水中浸漬24小時,於260℃之焊料槽中漂浮30秒鐘後,依據以下基準對此時之積層體之外觀進行評價。 ○(良):未出現膨脹及剝落。 △(可):出現膨脹,一部分出現剝落。 ×(不可):出現膨脹及剝落。<Float soldering resistance> The laminate was cut into 5 cm squares, immersed in pure water at 24°C for 24 hours, and floated in a solder tank at 260°C for 30 seconds. The appearance of the laminate at that time was evaluated according to the following criteria. ○ (good): Swelling and peeling did not occur. △(Yes): Swelling occurs, and part of it peels off. × (not possible): Swelling and peeling occurred.

<蝕刻處理後之翹曲(起伏)> 對積層體之銅箔進行蝕刻處理而使其去除後,置於平坦之玻璃之上,依據以下基準對翹曲(起伏)之有無進行評價。 ○(可):未出現翹曲(起伏)。 ×(不可):出現翹曲(起伏),有自玻璃隆起之部分。 將各評價結果總結示於表2及表3。<Warpage (undulation) after etching treatment> After etching and removing the copper foil of the laminate, it was placed on a flat glass, and the presence or absence of warpage (undulation) was evaluated based on the following criteria. ○ (Yes): No warpage (undulation) occurs. × (unavailable): There is warpage (undulation), and there is a part bulging from the glass. The results of each evaluation are summarized in Table 2 and Table 3.

[表2] 積層體 1 2 3 4 5 位於2個電解銅箔間之層之構成 F1 /P1 /F1 F2 /P1 /F2 F1 /P2 /F1 F1 /P3 /F1 F1 /P4 /F1 構成    厚度[μm] 25/50/25 25/50/25 25/50/25 25/50/25 25/50/25 層P 吸水率[%] 1.20 1.20 1.00 1.50 0.60    線膨脹係數[ppm/℃] 10 10 22 12 26 層F 吸水率[%] 0.01 0.01 0.01 0.01 0.01 電解銅箔之種類 電解銅箔1 電解銅箔1 電解銅箔1 電解銅箔1 電解銅箔1 積層體之物性 常態-介電常數 2.7 2.7 2.6 2.9 2.5 加濕-介電常數 2.7 2.7 2.6 3.0 2.5 常態-介電損耗正切 0.003 0.003 0.002 0.004 0.002 加濕-介電損耗正切 0.006 0.006 0.005 0.009 0.004 剝離強度[kN/m] 1.4 1.0 1.2 1.5 0.8 吸水率(計算值)[%] 0.48 0.48 0.40 0.59 0.24 吸水率(實測值)[%] 0.30 0.30 0.25 0.45 0.12 吸水前 傳輸損失[dB] -0.82 -0.82 -0.78 -0.96 -0.78 吸水後 傳輸損失[dB] -1.11 -1.11 -0.98 -1.57 -0.85 吸水前後之傳輸損失比 0.74 0.74 0.80 0.61 0.92 耐浮焊性 × × 蝕刻處理後之翹曲 × [Table 2] Layered body 1 2 3 4 5 The composition of the layer between 2 electrolytic copper foils F 1 /P 1 /F 1 F 2 /P 1 /F 2 F 1 /P 2 /F 1 F 1 /P 3 /F 1 F 1 /P 4 /F 1 Floor constitute Thickness [μm] 25/50/25 25/50/25 25/50/25 25/50/25 25/50/25 Layer P Water absorption rate [%] 1.20 1.20 1.00 1.50 0.60 Coefficient of linear expansion [ppm/℃] 10 10 twenty two 12 26 Layer F Water absorption rate [%] 0.01 0.01 0.01 0.01 0.01 Types of electrolytic copper foil Electrolytic copper foil 1 Electrolytic copper foil 1 Electrolytic copper foil 1 Electrolytic copper foil 1 Electrolytic copper foil 1 The normal state of the physical properties of the laminated body-the dielectric constant 2.7 2.7 2.6 2.9 2.5 Humidification-Dielectric Constant 2.7 2.7 2.6 3.0 2.5 Normal-Dielectric Loss Tangent 0.003 0.003 0.002 0.004 0.002 Humidification-Dielectric Loss Tangent 0.006 0.006 0.005 0.009 0.004 Peel strength [kN/m] 1.4 1.0 1.2 1.5 0.8 Water absorption (calculated value) [%] 0.48 0.48 0.40 0.59 0.24 Water absorption (measured value) [%] 0.30 0.30 0.25 0.45 0.12 Transmission loss before water absorption [dB] -0.82 -0.82 -0.78 -0.96 -0.78 Transmission loss after water absorption [dB] -1.11 -1.11 -0.98 -1.57 -0.85 Transmission loss ratio before and after water absorption 0.74 0.74 0.80 0.61 0.92 Float solder resistance X X Warpage after etching X

[表3] 積層體 6 7 8 9 位於2個電解銅箔間之層之構成 PI1 /P1 /PI1 F1 /P5 /F1 F1 /P1 /F1 F1 /P1 /F1 構成    厚度[μm] 25/50/25 25/50/25 25/50/25 25/50/25 層P 吸水率[%] 1.20 1.00 1.20 1.20    線膨脹係數[ppm/℃] 10 18 10 10 層F 吸水率[%] 1.5 0.01 0.01 0.01    電解銅箔之種類 電解銅箔1 電解銅箔1 電解銅箔2 電解銅箔3 積層體之物性 常態-介電常數 3.2 2.8 2.7 2.7 加濕-介電常數 3.4 2.8 2.7 2.7 常態-介電損耗正切 0.007 0.002 0.003 0.003 加濕-介電損耗正切 0.016 0.005 0.006 0.006 剝離強度[kN/m] 0.5 1.1 1.6 0.8 吸水率(計算值)[%] 1.60 0.40 0.48 0.48 吸水率(實測值)[%] 1.60 0.25 0.30 0.30 吸水前 傳輸損失[dB] -1.3 -0.90 -0.90 -0.74 吸水後 傳輸損失[dB] -2.65 -1.17 -1.22 -1.00 吸水前後之傳輸損失比 0.49 0.77 0.74 0.74 耐浮焊性 × 蝕刻處理後之翹曲 [table 3] Layered body 6 7 8 9 The composition of the layer between 2 electrolytic copper foils PI 1 /P 1 /PI 1 F 1 /P 5 /F 1 F 1 /P 1 /F 1 F 1 /P 1 /F 1 Floor constitute Thickness [μm] 25/50/25 25/50/25 25/50/25 25/50/25 Layer P Water absorption rate [%] 1.20 1.00 1.20 1.20 Coefficient of linear expansion [ppm/℃] 10 18 10 10 Layer F Water absorption rate [%] 1.5 0.01 0.01 0.01 Types of electrolytic copper foil Electrolytic copper foil 1 Electrolytic copper foil 1 Electrolytic copper foil 2 Electrolytic copper foil 3 The normal state of the physical properties of the laminated body-the dielectric constant 3.2 2.8 2.7 2.7 Humidification-Dielectric Constant 3.4 2.8 2.7 2.7 Normal-Dielectric Loss Tangent 0.007 0.002 0.003 0.003 Humidification-Dielectric Loss Tangent 0.016 0.005 0.006 0.006 Peel strength [kN/m] 0.5 1.1 1.6 0.8 Water absorption (calculated value) [%] 1.60 0.40 0.48 0.48 Water absorption (measured value) [%] 1.60 0.25 0.30 0.30 Transmission loss before water absorption [dB] -1.3 -0.90 -0.90 -0.74 Transmission loss after water absorption [dB] -2.65 -1.17 -1.22 -1.00 Transmission loss ratio before and after water absorption 0.49 0.77 0.74 0.74 Float solder resistance X Warpage after etching

再者,藉由目視對各積層體之外觀進行確認,結果除積層體3以外之積層體中,外觀未出現皺褶。於積層體3確認出源自層P之波狀皺褶之產生。 將各積層體切割為5 mm見方,於曲率半徑(300 μm)之條件下使其彎折180°,自上方施加負載(50 mN、1分鐘)後,使彎折復原,對外觀進行確認,結果積層體1~3及積層體5~9中,折縫處未出現外觀異常,而積層體6中,折縫處出現白化。 [產業上之可利用性]Furthermore, the appearance of each laminate was confirmed visually, and as a result, no wrinkles appeared in the appearance of laminates other than the laminate 3. In the layered body 3, the generation of wavy wrinkles originating from the layer P was confirmed. Cut each laminate into a 5 mm square, bend it 180° under the condition of a radius of curvature (300 μm), apply a load (50 mN, 1 minute) from above, restore the bend, and check the appearance. As a result, in laminates 1 to 3 and laminates 5 to 9, there was no abnormal appearance at the crease, while in laminate 6, whitening appeared at the crease. [Industrial availability]

本發明之積層體作為印刷基板之材料有用。又,若使用本發明之印刷基板,則能夠獲得特性優異之天線。 再者,將於2019年04月16日提出申請之日本專利申請2019-077829號、於2019年08月21日提出申請之日本專利申請2019-151453號及於2019年10月25日提出申請之日本專利申請2019-194515號之說明書、申請專利範圍及發明摘要之全部內容引用至此,作為本發明之說明書之揭示併入。The laminate of the present invention is useful as a material for printed circuit boards. In addition, if the printed circuit board of the present invention is used, an antenna with excellent characteristics can be obtained. In addition, the Japanese patent application No. 2019-077829 filed on April 16, 2019, the Japanese patent application No. 2019-151453 filed on August 21, 2019, and those filed on October 25, 2019 The entire contents of the specification of Japanese Patent Application No. 2019-194515, the scope of patent application, and the abstract of the invention are quoted here and incorporated as the disclosure of the specification of the present invention.

Claims (15)

一種積層體,其係具有金屬箔層、非熱塑性聚醯亞胺之層P、及四氟乙烯系聚合物之層F,且最外層之至少一層為金屬箔層的至少3層結構者,且於上述層P之至少一面存在上述層F,上述層P之吸水率未達1.5%,且線膨脹係數之絕對值為25 ppm/℃以下。A laminate having a metal foil layer, a non-thermoplastic polyimide layer P, and a tetrafluoroethylene polymer layer F, and at least one of the outermost layers is a metal foil layer with at least three layers, and The layer F is present on at least one side of the layer P, the water absorption rate of the layer P is less than 1.5%, and the absolute value of the linear expansion coefficient is 25 ppm/°C or less. 如請求項1之積層體,其係於上述層P之兩面分別存在上述層F之至少4層結構之積層體。Such as the laminated body of claim 1, which is a laminated body in which at least four layers of the above-mentioned layer F are respectively present on both sides of the above-mentioned layer P. 如請求項1或2之積層體,其中上述金屬箔層之表面之均方根粗糙度為0.25 μm以上。The laminate of claim 1 or 2, wherein the root mean square roughness of the surface of the metal foil layer is 0.25 μm or more. 如請求項1至3中任一項之積層體,其中上述金屬箔層之厚度為2~30 μm。The laminate according to any one of claims 1 to 3, wherein the thickness of the metal foil layer is 2-30 μm. 如請求項1至4中任一項之積層體,其中上述非熱塑性聚醯亞胺係玻璃轉移溫度為280℃以上之非熱塑性聚醯亞胺。The laminate according to any one of claims 1 to 4, wherein the non-thermoplastic polyimide is a non-thermoplastic polyimide having a glass transition temperature of 280°C or higher. 如請求項1至5中任一項之積層體,其中上述非熱塑性聚醯亞胺係於320℃下之拉伸彈性模數為0.2 GPa以上者。The laminate according to any one of claims 1 to 5, wherein the non-thermoplastic polyimide has a tensile modulus of 0.2 GPa or more at 320°C. 如請求項1至6中任一項之積層體,其中上述非熱塑性聚醯亞胺之醯亞胺基密度為0.20~0.35。The laminate according to any one of claims 1 to 6, wherein the non-thermoplastic polyimide has a density of 0.20 to 0.35. 如請求項1至7中任一項之積層體,其中上述層P之厚度為10~100 μm。The layered body according to any one of claims 1 to 7, wherein the thickness of the above-mentioned layer P is 10-100 μm. 如請求項1至8中任一項之積層體,其中上述四氟乙烯系聚合物係熔融溫度為260~320℃之熱熔融性四氟乙烯系聚合物。The laminate according to any one of claims 1 to 8, wherein the tetrafluoroethylene-based polymer is a hot-melt tetrafluoroethylene-based polymer having a melting temperature of 260 to 320°C. 如請求項1至9中任一項之積層體,其中上述層F之厚度為1~38 μm。The layered body according to any one of claims 1 to 9, wherein the thickness of the above-mentioned layer F is 1 to 38 μm. 如請求項1至10中任一項之積層體,其中於使上述積層體在24℃且相對濕度50%之氛圍中保持24小時之情形時,與上述層F接觸之上述層P之介電常數為2.8以下,且介電損耗正切為0.004以下。The layered body of any one of claims 1 to 10, wherein when the layered body is kept in an atmosphere of 24° C. and a relative humidity of 50% for 24 hours, the dielectric of the layer P in contact with the layer F The constant is 2.8 or less, and the dielectric loss tangent is 0.004 or less. 如請求項1至11中任一項之積層體,其中於使上述積層體在85℃且相對濕度85%之氛圍中保持72小時之情形時,與上述層F接觸之上述層P之介電常數為2.8以下,且介電損耗正切為0.007以下。The layered body of any one of claims 1 to 11, wherein when the layered body is kept in an atmosphere of 85°C and a relative humidity of 85% for 72 hours, the dielectric of the layer P in contact with the layer F The constant is 2.8 or less, and the dielectric loss tangent is 0.007 or less. 一種印刷基板之製造方法,其係對如請求項1至12中任一項之積層體之上述金屬箔層進行蝕刻處理,形成傳輸電路,而獲得印刷基板。A method for manufacturing a printed circuit board, which is to perform an etching treatment on the above-mentioned metal foil layer of a laminate according to any one of claims 1 to 12 to form a transmission circuit to obtain a printed circuit board. 一種印刷基板,其係具有非熱塑性聚醯亞胺之層P、存在於上述層P之至少一面之四氟乙烯系聚合物之層F、及存在於上述層F之至少一面之傳輸電路者,且上述層P之吸水率未達1.5%,且線膨脹係數之絕對值為25 ppm/℃以下。A printed substrate having a layer P of non-thermoplastic polyimide, a layer F of a tetrafluoroethylene polymer present on at least one side of the above-mentioned layer P, and a transmission circuit present on at least one side of the above-mentioned layer F, And the water absorption rate of the above layer P is less than 1.5%, and the absolute value of the linear expansion coefficient is 25 ppm/°C or less. 一種天線,其由如請求項14之印刷基板所形成。An antenna formed by the printed circuit board as claimed in claim 14.
TW109112147A 2019-04-16 2020-04-10 Laminate, method for manufacturing printed circuit board, printed circuit board, and antenna TW202103934A (en)

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