TW202103247A - Substrate processing device, manufacturing method and program of semiconductor device capable of selectively processing substrate having troughs - Google Patents

Substrate processing device, manufacturing method and program of semiconductor device capable of selectively processing substrate having troughs Download PDF

Info

Publication number
TW202103247A
TW202103247A TW108132931A TW108132931A TW202103247A TW 202103247 A TW202103247 A TW 202103247A TW 108132931 A TW108132931 A TW 108132931A TW 108132931 A TW108132931 A TW 108132931A TW 202103247 A TW202103247 A TW 202103247A
Authority
TW
Taiwan
Prior art keywords
gas
substrate
area
supply unit
supplied
Prior art date
Application number
TW108132931A
Other languages
Chinese (zh)
Inventor
油谷幸則
廣瀬義朗
大橋直史
高崎唯史
Original Assignee
日商國際電氣股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商國際電氣股份有限公司 filed Critical 日商國際電氣股份有限公司
Publication of TW202103247A publication Critical patent/TW202103247A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The subject of the present invention is to provide a technique that can selectively process substrates having troughs. One embodiment of the present invention for solving the aforementioned issue is a technique, which comprises: a substrate carrying portion disposed in a processing chamber and having a substrate carrying surface, wherein the substrate carrying surface carries a substrate having a plurality of troughs; a gas supply portion for supplying processing gas to the processing chamber; an exhaust portion for exhausting ambient gas from the processing chamber; and, an electromagnetic wave supply portion for supplying electromagnetic wave from one side of the substrate to process the surfaces of the troughs.

Description

基板處理裝置、半導體裝置之製造方法及程式Substrate processing device, semiconductor device manufacturing method and program

關於基板處理裝置、半導體裝置之製造方法及程式。Regarding the manufacturing methods and programs of substrate processing equipment and semiconductor devices.

伴隨近年來之微細化傾向，於製造半導體裝置之過程中，於基板上形成縱橫比較高的槽，或者於該槽、周圍之構成進行各種處理。作為處理槽周圍的方法，例如有專利文獻1所記載之技術。 [先前技術文獻] [專利文獻]With the trend toward miniaturization in recent years, in the process of manufacturing a semiconductor device, a groove with a high aspect ratio is formed on a substrate, or various treatments are performed on the structure of the groove and surroundings. As a method of treating the periphery of the tank, for example, there is a technique described in Patent Document 1. [Prior Technical Literature] [Patent Literature]

[專利文獻1] 日本專利特開2014-75579[Patent Document 1] Japanese Patent Laid-Open No. 2014-75579

(發明所欲解決之問題)(The problem to be solved by the invention)

上述之槽例如具有10~20nm長之寬度。通常，對於在基板上形成槽時，可考慮使用微影(lithography)技術，但於上述之寬度的情況下，產生對位錯誤之影響很大，且高精度之光罩製作困難，因此有難以於正確之位置形成槽的問題。The above-mentioned groove has a width of 10-20 nm, for example. Generally, when forming grooves on a substrate, lithography technology can be considered. However, in the case of the above-mentioned width, the effect of alignment errors is great, and it is difficult to manufacture high-precision masks. The problem of forming grooves in the correct position.

因此，為了不對所需部位以外之場所進行蝕刻，而考慮於基板表面形成保護膜。然而，於形成保護膜時，由於氣體係同樣地被供給至基板表面，因而不僅於基板表面形成保護膜，於槽中亦形成保護膜。於此情況下，由於在槽中殘留有未意料到之成分，因此，半導體裝置無法達到既定之功能。Therefore, in order not to etch locations other than the required locations, it is considered to form a protective film on the surface of the substrate. However, when the protective film is formed, since the gas system is also supplied to the surface of the substrate, not only the protective film is formed on the surface of the substrate, but also the protective film is formed in the groove. In this case, because there are unintended components remaining in the groove, the semiconductor device cannot achieve the intended function.

於此，本發明之目的在於提供一種可對具有槽的基板選擇性地進行處理之技術。 (解決問題之技術手段)Here, the object of the present invention is to provide a technology that can selectively process substrates with grooves. (Technical means to solve the problem)

用以解決上述課題之一態樣為一種技術，其具備有：基板載置部，其被備置在處理室內，且具有基板載置面，該基板載置面載置具有複數個槽的基板；氣體供給部，其將處理氣體供給至上述處理室；排氣部，其自上述處理室將環境氣體排氣；及電磁波供給部，其以處理上述槽之表面之方式而自上述基板之側向供給電磁波。 (對照先前技術之功效)One aspect to solve the above-mentioned problems is a technology, which includes: a substrate placing portion, which is provided in a processing chamber, and has a substrate placing surface on which a substrate having a plurality of grooves is placed; A gas supply part which supplies processing gas to the processing chamber; an exhaust part which exhausts ambient gas from the processing chamber; and an electromagnetic wave supply part which processes the surface of the groove from the side of the substrate Supply electromagnetic waves. (Compared to the effect of the previous technology)

根據該技術，完成一種可對具有槽的基板選擇性地進行處理之技術。According to this technology, a technology capable of selectively processing substrates with grooves is completed.

(第1實施形態) 使用圖1，對於處理基板的基板處理裝置200及使用基板處理裝置200的基板處理方法之一例進行說明。(First Embodiment) Using FIG. 1, an example of a substrate processing apparatus 200 for processing a substrate and a substrate processing method using the substrate processing apparatus 200 will be described.

(基板處理裝置) 基板處理裝置200具有腔室202。腔室202例如構成為橫截面呈圓形且扁平的密閉容器。於腔室202內形成有對作為基板的矽晶圓等之基板100進行處理的處理空間205、及在將基板100搬送至處理空間205時基板100所通過的搬送空間206。腔室202係以上部容器202a與下部容器202b所構成。(Substrate processing equipment) The substrate processing apparatus 200 has a chamber 202. The chamber 202 is configured as, for example, a closed container having a circular and flat cross-section. A processing space 205 for processing a substrate 100 such as a silicon wafer as a substrate, and a transfer space 206 through which the substrate 100 passes when the substrate 100 is transferred to the processing space 205 are formed in the chamber 202. The chamber 202 is composed of an upper container 202a and a lower container 202b.

於下部容器202b之側面，設置有鄰接於閘閥149的基板搬入搬出口148，基板100係經由基板搬入搬出口148而在與未圖示的真空搬送室之間移動。於下部容器202b之底部設置有複數個升降銷207。A substrate carrying-in/outlet 148 adjacent to the gate valve 149 is provided on the side surface of the lower container 202b, and the substrate 100 is moved between a vacuum transfer chamber (not shown) via the substrate carrying-in/outlet 148. A plurality of lifting pins 207 are provided at the bottom of the lower container 202b.

構成處理空間205的處理室201係例如以後述之基板載置台212與簇射頭230所構成。於處理空間205內設置有支撐基板100的基板支撐部210。基板支撐部210主要具有載置基板100的基板載置面211、於表面具有基板載置面211的基板載置台212、及內藏於基板載置台212之作為加熱源的加熱器213。The processing chamber 201 constituting the processing space 205 is constituted by, for example, a substrate mounting table 212 and a shower head 230 which will be described later. A substrate supporting portion 210 supporting the substrate 100 is provided in the processing space 205. The substrate support portion 210 mainly has a substrate mounting surface 211 on which the substrate 100 is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on the surface, and a heater 213 as a heating source built in the substrate mounting table 212.

於基板載置台212上，升降銷207所貫通的貫通孔214係分別設置於與升降銷207對應的位置。於加熱器213連接有控制加熱器213之溫度的溫度控制部220。On the substrate mounting table 212, the through holes 214 through which the lift pins 207 penetrate are provided at positions corresponding to the lift pins 207, respectively. A temperature control unit 220 that controls the temperature of the heater 213 is connected to the heater 213.

基板載置台212係藉由軸217所支撐。軸217之支撐部貫通被設置在腔室202之底壁的孔，進而經由支撐板216而在腔室202之外部連接於升降旋轉部218。使升降旋轉部218運作而使軸217及基板載置台212升降，藉此可使被載置於基板載置面211上的基板100升降。進而，使升降旋轉部218運作，而可使基板載置台212旋轉。再者，軸217下端部之周圍係藉由波紋管219所覆蓋。腔室202內保持為氣密。The substrate mounting table 212 is supported by the shaft 217. The supporting part of the shaft 217 penetrates through a hole provided in the bottom wall of the chamber 202, and is further connected to the lifting and rotating part 218 outside the chamber 202 via a supporting plate 216. The lifting and rotating part 218 is operated to raise and lower the shaft 217 and the substrate mounting table 212, whereby the substrate 100 placed on the substrate mounting surface 211 can be raised and lowered. Furthermore, by operating the up-and-down rotation part 218, the substrate mounting table 212 can be rotated. Furthermore, the circumference of the lower end of the shaft 217 is covered by a bellows 219. The inside of the chamber 202 is kept airtight.

升降旋轉部218主要具有支撐軸217的支撐軸218a、及使支撐軸218a升降或旋轉的運作部218b。運作部218b例如具有包含有用以實現升降之馬達的升降部218c、及用以使支撐軸218a旋轉的齒輪等之旋轉機構218d。為了使動作滑順，而於該等構件上塗布有潤滑脂(grease)等。The lifting and rotating part 218 mainly includes a support shaft 218a that supports the shaft 217, and an operation part 218b that lifts or rotates the support shaft 218a. The operation part 218b has, for example, a rotation mechanism 218d including a lifting part 218c with a motor for lifting and lowering, a gear for rotating the support shaft 218a, and the like. In order to make the movement smooth, grease and the like are coated on these components.

基板載置台212係於搬送基板100時下降至基板載置面211與基板搬入搬出口148對向的位置，而於處理基板100時，如圖1所示般上升至基板100位在處理空間205內的處理位置。The substrate mounting table 212 is lowered to a position where the substrate mounting surface 211 is opposed to the substrate carrying-in/outlet 148 when the substrate 100 is transported, and when the substrate 100 is processed, it rises until the substrate 100 is positioned in the processing space 205 as shown in FIG. Processing location within.

於處理空間205之上部(上游側)設置有簇射頭230。簇射頭230具有蓋231。蓋231具有凸緣232，凸緣232被支撐在上部容器202a上。進而，蓋231具有定位部233。藉由定位部233嵌合於上部容器202a，而將蓋231固定。A shower head 230 is provided on the upper portion (upstream side) of the processing space 205. The shower head 230 has a cover 231. The cover 231 has a flange 232, and the flange 232 is supported on the upper container 202a. Furthermore, the cover 231 has a positioning portion 233. The cover 231 is fixed by fitting the positioning portion 233 to the upper container 202a.

簇射頭230具有緩衝空間234。緩衝空間234可說是以蓋231與定位部233所構成的空間。緩衝空間234與處理空間205連通。被供給至緩衝空間234的氣體係在緩衝空間234擴散，而均勻地被供給至處理空間205。於此，將緩衝空間234與處理空間205作為不同構成而進行說明，但不限於此，亦可將緩衝空間234包含在處理空間205。The shower head 230 has a buffer space 234. The buffer space 234 can be said to be a space formed by the cover 231 and the positioning portion 233. The buffer space 234 communicates with the processing space 205. The gas system supplied to the buffer space 234 diffuses in the buffer space 234 and is uniformly supplied to the processing space 205. Here, the buffer space 234 and the processing space 205 are described as different configurations, but the present invention is not limited to this, and the buffer space 234 may be included in the processing space 205.

於蓋231設置有供給第1氣體的第1氣體供給孔235、供給第2氣體的第2氣體供給孔236、及供給沖洗氣體的沖洗氣體供給孔237。The cover 231 is provided with a first gas supply hole 235 for supplying a first gas, a second gas supply hole 236 for supplying a second gas, and a flushing gas supply hole 237 for supplying a flushing gas.

第1氣體供給孔235係構成為與第1氣體供給部240之一部分即第1氣體供給管241連通。第2氣體供給孔236係構成為與第2氣體供給部250之一部分即第2氣體供給管251連通。沖洗氣體供給孔237係構成為與沖洗氣體供給部260之一部分即沖洗氣體供給管261連通。The first gas supply hole 235 is configured to communicate with the first gas supply pipe 241 which is a part of the first gas supply portion 240. The second gas supply hole 236 is configured to communicate with the second gas supply pipe 251 which is a part of the second gas supply portion 250. The flushing gas supply hole 237 is configured to communicate with the flushing gas supply pipe 261 which is a part of the flushing gas supply part 260.

圖1所記載之「A」與圖2所記載之「A」連通。「B」與圖2所記載之「B」連通。「C」與圖2所記載之「C」連通。"A" described in Figure 1 is connected to "A" described in Figure 2. "B" is connected to "B" described in Figure 2. "C" is connected to "C" described in Figure 2.

接著，藉由圖2而說明氣體供給部。圖2(a)為氣體供給部之一部分即第1氣體供給部240。使用圖2(a)而說明其詳細內容。自第1氣體供給管241主要地供給第1氣體。Next, the gas supply unit will be described with reference to FIG. 2. FIG. 2(a) shows the first gas supply part 240 which is a part of the gas supply part. The details will be explained using Fig. 2(a). The first gas is mainly supplied from the first gas supply pipe 241.

於第1氣體供給管241，自上游方向起依序地設置有第1氣體供給源242、流量控制器(流量控制部)即MFC 243、及開閉閥即閥244。The first gas supply pipe 241 is provided with a first gas supply source 242, an MFC 243 that is a flow controller (flow control unit), and a valve 244 that is an on-off valve in order from the upstream direction.

含有第1元素的氣體(以下稱為「第1氣體」)係自第1氣體供給管241經由MFC 243、閥244、第1氣體供給管241而被供給至簇射頭230。The gas containing the first element (hereinafter referred to as “first gas”) is supplied from the first gas supply pipe 241 to the shower head 230 via the MFC 243, the valve 244, and the first gas supply pipe 241.

第1氣體為原料氣體，即處理氣體之一。於此，第1元素例如為鈦(Ti)。即第1氣體為金屬氣體，而為含Ti氣體。具體而言，使用四(二甲胺基)鈦(Ti[N(CH3 )2 ]4 ，亦稱為TDMAT)氣體。The first gas is a raw material gas, that is, one of the processing gases. Here, the first element is, for example, titanium (Ti). That is, the first gas is a metal gas and is a Ti-containing gas. Specifically, tetrakis (dimethylamino) titanium (Ti[N(CH 3 ) 2 ] 4 , also referred to as TDMAT) gas is used.

於第1氣體在常溫常壓下為液體之情形時，只要於第1氣體供給源242與MFC 243之間設置未圖示之氣化器即可。在此作為氣體而進行說明。When the first gas is liquid at normal temperature and pressure, it is only necessary to install a vaporizer (not shown) between the first gas supply source 242 and the MFC 243. Here, it will be described as a gas.

主要藉由第1氣體供給管241、MFC 243、閥244構成第1氣體供給部240。進而，亦可考慮將第1氣體供給源242包含在第1氣體供給部240。The first gas supply part 240 is mainly composed of the first gas supply pipe 241, the MFC 243 and the valve 244. Furthermore, it is also conceivable to include the first gas supply source 242 in the first gas supply unit 240.

接著，使用圖2(b)而說明氣體供給部之一部分即第2氣體供給部250。於第2氣體供給管251，自上游方向起依序地設置有第2氣體供給源252、流量控制器即MFC 253、及閥254。Next, the second gas supply part 250 which is a part of the gas supply part will be described using FIG. 2(b). The second gas supply pipe 251 is provided with a second gas supply source 252, an MFC 253 that is a flow controller, and a valve 254 in this order from the upstream direction.

而且，自第2氣體供給管251將與第1氣體反應的反應氣體供給至簇射頭230內。反應氣體亦稱為第2氣體。第2氣體為處理氣體之一，例如為含氮氣體。作為含氮氣體，例如使用氨氣(NH3 )氣體。Then, the reaction gas that reacts with the first gas is supplied into the shower head 230 from the second gas supply pipe 251. The reaction gas is also called the second gas. The second gas is one of the processing gases, for example, a nitrogen-containing gas. As the nitrogen-containing gas, for example, ammonia (NH 3 ) gas is used.

主要以第2氣體供給管251、MFC 253、閥254構成第2氣體供給部250。再者，第2氣體供給部250為供給反應氣體的構成，因而亦稱為反應氣體供給部。進而，亦可將第2氣體供給源252包含在第2氣體供給部250。The second gas supply part 250 is mainly composed of the second gas supply pipe 251, the MFC 253, and the valve 254. In addition, the second gas supply part 250 is a configuration for supplying reaction gas, and therefore is also referred to as a reaction gas supply part. Furthermore, the second gas supply source 252 may be included in the second gas supply part 250.

接著，使用圖2(c)，說明氣體供給部之一部分即沖洗氣體供給部260。於沖洗氣體供給管261，自上游方向起依序地設置有沖洗氣體供給源262、流量控制器(流量控制部)即MFC 263、及閥264。Next, the flushing gas supply part 260 which is a part of the gas supply part is demonstrated using FIG. 2(c). The flushing gas supply pipe 261 is provided with a flushing gas supply source 262, an MFC 263 that is a flow controller (flow control unit), and a valve 264 in order from the upstream direction.

而且，自沖洗氣體供給管261將沖洗氣體供給至簇射頭230內。沖洗氣體為不與第1氣體、第2氣體反應的氣體，且為沖洗處理室201中之環境氣體的沖洗氣體之一，例如為氮氣(N2 )氣體。In addition, the flushing gas is supplied into the shower head 230 from the flushing gas supply pipe 261. The flushing gas is a gas that does not react with the first gas and the second gas, and is one of the flushing gases for flushing the ambient gas in the processing chamber 201, such as nitrogen (N 2 ) gas.

主要以沖洗氣體供給管261、MFC 263、閥264構成沖洗氣體供給部260。亦可將沖洗氣體供給源262包含在沖洗氣體供給部260。The flushing gas supply pipe 261, the MFC 263, and the valve 264 mainly constitute the flushing gas supply unit 260. The flushing gas supply source 262 may also be included in the flushing gas supply part 260.

此外，將第1氣體供給部240、第2氣體供給部250、沖洗氣體供給部260總合而稱為氣體供給部。In addition, the first gas supply unit 240, the second gas supply unit 250, and the flushing gas supply unit 260 are collectively referred to as a gas supply unit.

其次，以圖1說明排氣部280。將處理室201之環境氣體的排氣部280具有連通於處理空間205的排氣管281。於排氣管281設置有將處理空間205內控制在既定壓力的壓力控制器即APC(Auto Pressure Controller，自動壓力控制器)282、及計測處理空間205之壓力的壓力檢測部283。APC 282具有可調整開度的閥體(未圖示)，根據來自後述之控制器400的指令而調整排氣管281之流導(conductance)。此外，於排氣管281中，在APC 282之上游側設置有閥284。將排氣管281與閥284、APC 282、壓力檢測部283總合而稱為排氣部280。Next, the exhaust unit 280 will be described with reference to FIG. 1. The exhaust part 280 for discharging the ambient gas of the processing chamber 201 has an exhaust pipe 281 communicating with the processing space 205. The exhaust pipe 281 is provided with an APC (Auto Pressure Controller) 282 that is a pressure controller that controls the inside of the processing space 205 to a predetermined pressure, and a pressure detection unit 283 that measures the pressure of the processing space 205. The APC 282 has a valve body (not shown) with an adjustable opening degree, and adjusts the conductance of the exhaust pipe 281 according to instructions from the controller 400 described later. In addition, in the exhaust pipe 281, a valve 284 is provided on the upstream side of the APC 282. The exhaust pipe 281, the valve 284, the APC 282, and the pressure detection unit 283 are collectively referred to as an exhaust unit 280.

於排氣管281之下游側設置有泵285。泵285經由排氣管281而將處理室201內之環境氣體排氣。A pump 285 is provided on the downstream side of the exhaust pipe 281. The pump 285 exhausts the ambient gas in the processing chamber 201 through the exhaust pipe 281.

其次，說明電磁波供給部290。於上部容器202a之側壁設置有窗291。進而，以與窗291鄰接般，將電磁波供給構造292固定於上部容器202a之側壁。於電磁波供給構造292連接有電磁波供給控制部294。Next, the electromagnetic wave supply unit 290 will be described. A window 291 is provided on the side wall of the upper container 202a. Furthermore, the electromagnetic wave supply structure 292 is fixed to the side wall of the upper container 202a so as to be adjacent to the window 291. An electromagnetic wave supply control unit 294 is connected to the electromagnetic wave supply structure 292.

窗291例如以石英所構成，構成為進而將容器202內之環境氣體維持為氣密。窗291之高度方向的中心位置係設定為與基板載置面211之高度相同的高度。更佳為，設定成與基板100表面相同的高度。The window 291 is made of quartz, for example, and is configured to further maintain the ambient gas in the container 202 airtight. The center position of the height direction of the window 291 is set to the same height as the height of the substrate mounting surface 211. More preferably, it is set to the same height as the surface of the substrate 100.

電磁波供給構造292具有照射電磁波的功能，例如設置有照射紫外線光的指向性燈293。指向性燈293構成為可將電磁波朝所意圖的方向照射。指向性燈293之照射面構成為面向窗291。指向性燈293之照射面中，高度方向中心位置係設定為與基板載置面之高度相同的高度。更佳為，配設於較基板100之表面略高的位置。藉由設為略高之位置，可如後述般，對圖5所記載之基板100的表面103照射電磁波。The electromagnetic wave supply structure 292 has a function of irradiating electromagnetic waves, and for example, is provided with a directional lamp 293 that irradiates ultraviolet light. The directional lamp 293 is configured to irradiate electromagnetic waves in a desired direction. The irradiation surface of the directional lamp 293 is configured to face the window 291. In the irradiation surface of the directional lamp 293, the center position in the height direction is set to the same height as the height of the substrate mounting surface. More preferably, it is arranged at a position slightly higher than the surface of the substrate 100. By setting it at a slightly higher position, the surface 103 of the substrate 100 described in FIG. 5 can be irradiated with electromagnetic waves as described later.

電磁波供給控制部294係基於來自後述之控制器400的指示而控制指向性燈293。自指向性燈293所照射的電磁波係經由窗291而自側向照射至基板100。The electromagnetic wave supply control unit 294 controls the directional lamp 293 based on an instruction from the controller 400 described later. The electromagnetic wave irradiated from the directional lamp 293 is irradiated to the substrate 100 from the side through the window 291.

如後述般，所供給的電磁波較佳為將波長設定為較形成在基板100的極細寬度之槽102之寬度L的長度更長的波長。如此，電磁波不繞入至槽102之中，因而槽102之內側不被電磁波所處理。例如，將波長為200nm~400nm之紫外線光用於本裝置中之處理。此外，只要波長為較寬度L之長度更長的波長，則不限於紫外線光，例如亦可使用自準分子燈(Excimer lamp)(使用Ar、ArF的燈)、水銀燈等所產生的電磁波。As described later, it is preferable to set the wavelength of the supplied electromagnetic wave to a wavelength longer than the length of the width L of the groove 102 formed in the very fine width of the substrate 100. In this way, the electromagnetic wave does not enter the slot 102, so the inside of the slot 102 is not processed by the electromagnetic wave. For example, ultraviolet light with a wavelength of 200nm~400nm is used for processing in this device. In addition, as long as the wavelength is longer than the length of the width L, it is not limited to ultraviolet light. For example, electromagnetic waves generated by an Excimer lamp (a lamp using Ar or ArF), a mercury lamp, and the like may also be used.

接著，說明控制器400。基板處理裝置200具有控制基板處理裝置200之各部分之動作的控制器400。如圖3所記載般，控制器400至少具有運算部(CPU(Central Processing Unit，中央處理單元))401、暫時儲存部402、儲存部403、發送接收部404。控制器400係經由發送接收部404而連接於基板處理裝置200之各構成，根據上位控制器、使用者之指示而自儲存部403讀出程式、配方，並根據其內容而控制各構成之動作。再者，控制器400可構成為專用之電腦，亦可構成為通用之電腦。例如可準備已存放有上述程式的外部儲存裝置(例如，磁帶、軟碟或硬碟等之磁碟、CD(Compact Disc，光碟)或DVD(Digital Versatile Disc，數位多功能光碟)等之光碟、MO(magneto-optical，磁光碟)等之磁光碟、USB(Universal Serial Bus，通用串列匯流排)記憶體(USB Flash Drive，USB快閃驅動器)或記憶卡等之半導體記憶體)412，使用外部儲存裝置412而將程式安裝於通用之電腦，藉此構成本實施形態之控制器400。此外，用以將程式供給至電腦的手段並不限於經由外部儲存裝置412而供給之情形。例如，亦可設為，使用網際網路或專用線路等之通信手段，自上位裝置420經由發送接收部411而接收資訊，而不經由外部儲存裝置412供給程式。此外，亦可使用鍵盤、觸控面板等之輸入輸出裝置413而對控制器400發出指示。Next, the controller 400 will be described. The substrate processing apparatus 200 has a controller 400 that controls the operation of each part of the substrate processing apparatus 200. As described in FIG. 3, the controller 400 has at least an arithmetic unit (CPU (Central Processing Unit)) 401, a temporary storage unit 402, a storage unit 403, and a transmission and reception unit 404. The controller 400 is connected to the various components of the substrate processing apparatus 200 via the transmitter/receiver unit 404, and reads programs and recipes from the storage unit 403 according to instructions from the host controller and the user, and controls the actions of each component according to the content. . Furthermore, the controller 400 may be configured as a dedicated computer or a general-purpose computer. For example, you can prepare external storage devices (such as magnetic tapes, floppy disks or hard disks, CDs (Compact Discs) or DVDs (Digital Versatile Discs) that have stored the above programs, MO (magneto-optical, magneto-optical) and other magneto-optical disks, USB (Universal Serial Bus) memory (USB Flash Drive, USB flash drive) or semiconductor memory such as memory card) 412, use The external storage device 412 installs the program in a general-purpose computer, thereby constituting the controller 400 of this embodiment. In addition, the means for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 412. For example, it can also be set to use communication means such as the Internet or a dedicated line to receive information from the host device 420 via the transmitting and receiving unit 411, instead of supplying programs via the external storage device 412. In addition, an input/output device 413 such as a keyboard and a touch panel can also be used to give instructions to the controller 400.

再者，儲存部402、外部儲存裝置412係構成為電腦可讀取之記錄媒體。以下，亦將該等總括地簡稱為記錄媒體。再者，於本說明書中，於使用記錄媒體一詞之情形時，有僅包含儲存部402單體之情形、僅包含外部儲存裝置412單體之情形、或包含該兩者之情形。Furthermore, the storage unit 402 and the external storage device 412 are constituted as a computer-readable recording medium. Hereinafter, these are also referred to as recording media collectively. Furthermore, in this specification, when the term recording medium is used, there are cases where only the storage unit 402 alone, only the external storage device 412 alone, or both.

(基板處理步驟) 使用圖4而對於使用基板處理裝置200的基板處理步驟進行說明。再者，於以下之說明中，構成基板處理裝置200之各部分的動作係藉由控制器400所控制。(Substrate processing steps) The substrate processing procedure using the substrate processing apparatus 200 will be described using FIG. 4. Furthermore, in the following description, the actions of each part constituting the substrate processing apparatus 200 are controlled by the controller 400.

說明基板搬入步驟。於圖4中，省略本步驟之說明。在基板處理裝置200中，使基板載置台212下降至基板100之搬送位置(搬送地點)，藉此使升降銷207貫通於基板載置台212之貫通孔214。接著，開啟閘閥149而使搬送空間206與真空搬送室(未圖示)連通。接著，使用晶圓移載機(未圖示)而將基板100自該移載室搬入至搬送空間206，將基板100移載至升降銷207上。藉此，基板100係在自基板載置台212表面所突出的升降銷207上以水平姿勢被支撐。Describe the board loading procedure. In Figure 4, the description of this step is omitted. In the substrate processing apparatus 200, the substrate mounting table 212 is lowered to the transfer position (transfer location) of the substrate 100, thereby allowing the lift pins 207 to penetrate through the through holes 214 of the substrate mounting table 212. Next, the gate valve 149 is opened to allow the transfer space 206 to communicate with the vacuum transfer chamber (not shown). Next, the substrate 100 is transferred from the transfer chamber to the transfer space 206 using a wafer transfer machine (not shown), and the substrate 100 is transferred to the lift pins 207. Thereby, the substrate 100 is supported in a horizontal posture on the lift pins 207 protruding from the surface of the substrate mounting table 212.

如圖5所記載般，於被搬入的基板100上形成有複數個支柱101、及形成在支柱101間之高縱橫比之極細寬度的槽102。在本基板處理步驟中，不在槽102中形成膜，而選擇性地於各支柱101周圍之表面103形成膜。As described in FIG. 5, a plurality of pillars 101 and a groove 102 with a high aspect ratio and an extremely narrow width formed between the pillars 101 are formed on the substrate 100 to be carried in. In this substrate processing step, a film is not formed in the groove 102, but a film is selectively formed on the surface 103 around each pillar 101.

當將基板100搬入至腔室202內之後，使晶圓移載機朝腔室202外退避，關閉閘閥149而使腔室202內密閉。其後，藉由使基板載置台212上升，而使基板100載置於基板載置面211上，進而，藉由使基板載置台212上升，而使基板100上升至上述之處理空間205內之處理位置(基板處理地點)。After the substrate 100 is loaded into the chamber 202, the wafer transfer machine is retracted to the outside of the chamber 202, and the gate valve 149 is closed to seal the chamber 202. Thereafter, by raising the substrate mounting table 212, the substrate 100 is mounted on the substrate mounting surface 211, and further, by raising the substrate mounting table 212, the substrate 100 is raised to the inside of the above-mentioned processing space 205 Processing location (substrate processing location).

於基板100被搬入至搬送空間206之後，開啟閥284，使處理空間205與APC 282之間連通。APC 282藉由調整排氣管281之流導而控制藉由泵285所進行之處理空間205之排氣流量，將處理空間205維持在既定壓力(例如10-5 ~10-1 Pa之高真空)。After the substrate 100 is carried into the transfer space 206, the valve 284 is opened to allow the processing space 205 and the APC 282 to communicate with each other. The APC 282 controls the exhaust flow of the processing space 205 by the pump 285 by adjusting the conductance of the exhaust pipe 281, and maintains the processing space 205 at a predetermined pressure (for example, a high vacuum of 10 -5 ~ 10 -1 Pa) ).

此外，當將基板100載置於基板載置台212上時，對加熱器213供給電力，以使基板100之表面成為既定溫度之方式進行控制。基板100之溫度例如為室溫以上且800℃以下，較佳為室溫以上且500℃以下。In addition, when the substrate 100 is placed on the substrate mounting table 212, electric power is supplied to the heater 213 so that the surface of the substrate 100 becomes a predetermined temperature. The temperature of the substrate 100 is, for example, room temperature or higher and 800° C. or lower, preferably room temperature or higher and 500° C. or lower.

於將基板100升溫至基板處理溫度之後，一面將基板100保持在既定溫度，一面進行伴隨加熱處理的下述基板處理。即，自各氣體供給管將處理氣體供給至腔室202內，而處理基板100。After raising the temperature of the substrate 100 to the substrate processing temperature, while maintaining the substrate 100 at a predetermined temperature, the following substrate processing accompanied by heating processing is performed. That is, the processing gas is supplied into the chamber 202 from each gas supply pipe, and the substrate 100 is processed.

以下，對於使用TDMAT作為第1氣體，使用NH3 氣體作為第2處理氣體，而於基板100之表面103上選擇性地形成保護膜之例進行說明。於此，進行交互供給處理，該交互供給處理係重複地進行交互供給不同處理氣體的步驟。Hereinafter, an example of selectively forming a protective film on the surface 103 of the substrate 100 using TDMAT as the first gas and NH 3 gas as the second processing gas will be described. Here, an interactive supply process is performed in which a step of alternately supplying different processing gases is repeatedly performed.

接著，說明第1氣體供給步驟S202。當基板載置台212如圖1所示般移動至晶圓處理地點之後，經由排氣管281而自處理室201將環境氣體排氣，調整處理室201內之壓力。一面調整為既定之壓力，一面將基板100之溫度加熱至既定之溫度，例如400℃至500℃。Next, the first gas supply step S202 will be described. After the substrate mounting table 212 moves to the wafer processing location as shown in FIG. 1, the ambient gas is exhausted from the processing chamber 201 through the exhaust pipe 281 to adjust the pressure in the processing chamber 201. While adjusting the pressure to a predetermined pressure, the temperature of the substrate 100 is heated to a predetermined temperature, for example, 400°C to 500°C.

接著，說明第1氣體供給部240之動作。在第1氣體供給部240中，將閥244設為開啟，且利用MFC 243調整第1氣體之流量。藉由如此之動作，自第1氣體供給管241對處理室201供給第1氣體，例如將含鈦氣體即TDMAT氣體供給至處理室。被供給之含鈦氣體被分解，而於基板100上形成含鈦層。此時，如圖6所記載般，含鈦氣體之多數的成分104附著於基板表面103，但一部分進入至槽102內。當經過既定時間後，將閥244設為關閉，停止含鈦氣體之供給。Next, the operation of the first gas supply unit 240 will be described. In the first gas supply unit 240, the valve 244 is opened, and the flow rate of the first gas is adjusted by the MFC 243. With such an operation, the first gas is supplied to the processing chamber 201 from the first gas supply pipe 241, for example, TDMAT gas, which is a titanium-containing gas, is supplied to the processing chamber. The supplied titanium-containing gas is decomposed, and a titanium-containing layer is formed on the substrate 100. At this time, as described in FIG. 6, most of the components 104 of the titanium-containing gas adhere to the surface 103 of the substrate, but some of them enter the groove 102. After a predetermined time has elapsed, the valve 244 is closed to stop the supply of titanium-containing gas.

接著，說明第1沖洗步驟S204。於停止含鈦氣體之供給之後，自沖洗氣體供給管261供給沖洗氣體，進行處理室201內之環境氣體的沖洗。於此，將閥264設為開啟。在第1氣體供給步驟S202中未能附著於基板100的含鈦氣體之成分104係藉由泵285經由排氣管281而自處理室201除去。此時，雖進入槽102中之第1氣體成分亦被除去，但難以將其整體除去。Next, the first rinse step S204 will be described. After the supply of the titanium-containing gas is stopped, the flushing gas is supplied from the flushing gas supply pipe 261 to flush the ambient gas in the processing chamber 201. Here, the valve 264 is set to open. The titanium-containing gas component 104 that did not adhere to the substrate 100 in the first gas supply step S202 is removed from the processing chamber 201 by the pump 285 through the exhaust pipe 281. At this time, although the first gas component that has entered the tank 102 is also removed, it is difficult to remove it as a whole.

在第1沖洗步驟S204中，為了將未能附著於基板100或殘留於處理室201、簇射頭緩衝室232的含鈦氣體排除，而供給大量之沖洗氣體以提高排氣效率。當經過既定時間之後，將閥264設為關閉而結束沖洗處理。In the first flushing step S204, in order to remove the titanium-containing gas that has not adhered to the substrate 100 or remained in the processing chamber 201 and the shower head buffer chamber 232, a large amount of flushing gas is supplied to improve the exhaust efficiency. After a predetermined time has elapsed, the valve 264 is closed to end the flushing process.

接著，說明第2氣體供給步驟S206。當處理室201之沖洗結束之後，進行第2氣體供給步驟S206。在第2氣體供給部250中，將閥254設為開啟，經由簇射頭230而將第2氣體即NH3 氣體供給至處理室201內。此時，以NH3 氣體之流量成為既定流量之方式而調整MFC 253。NH3 氣體之供給流量例如為1000~10000sccm。Next, the second gas supply step S206 will be described. After the flushing of the processing chamber 201 is completed, the second gas supply step S206 is performed. In the second gas supply unit 250, the valve 254 is opened, and NH 3 gas, which is the second gas, is supplied into the processing chamber 201 via the shower head 230. At this time, the MFC 253 is adjusted so that the flow rate of the NH 3 gas becomes the predetermined flow rate. The supply flow rate of NH 3 gas is, for example, 1000 to 10000 sccm.

與NH3 氣體之供給並行，自電磁波供給部290朝向基板100照射電磁波。被照射之電磁波經由窗291而到達至基板100。於指向性燈293之照射面中，高度方向中心位置係與窗290之高度方向中心位置相同，因此，被照射之電磁波如圖6之箭頭105般不被供給至槽102中，而是被供給至基板100之表面103。In parallel with the supply of NH 3 gas, electromagnetic waves are irradiated from the electromagnetic wave supply unit 290 toward the substrate 100. The irradiated electromagnetic wave reaches the substrate 100 through the window 291. In the irradiation surface of the directional lamp 293, the center position in the height direction is the same as the center position in the height direction of the window 290. Therefore, the irradiated electromagnetic waves are not supplied to the tank 102 as shown by the arrow 105 in FIG. To the surface 103 of the substrate 100.

電磁波切斷基板表面103之含鈦氣體成分104間之結合而加以分解。對於該切斷部分供給藉由熱所被分解的NH3 氣體，被切斷之含鈦氣體的成分與氨氣之成分(具體而言為氮成分)結合，形成結合度高之層。與此並行，含鈦氣體之剩餘成分(例如為氯(Cl))與氨氣之氫成分進行反應，生成HCl氣體、NH4 Cl氣體。該等氣體係自排氣部被排氣。The electromagnetic wave breaks the bonds between the titanium-containing gas components 104 on the substrate surface 103 and decomposes them. The NH 3 gas decomposed by heat is supplied to the cut portion, and the cut titanium-containing gas component and the ammonia gas component (specifically, the nitrogen component) are combined to form a layer with a high degree of bonding. In parallel with this, the remaining component of the titanium-containing gas (for example, chlorine (Cl)) reacts with the hydrogen component of the ammonia gas to generate HCl gas and NH 4 Cl gas. The gas system is exhausted from the exhaust part.

此時，電磁波係自基板100之側面照射，因此如圖6所記載般，難以進入至槽102中。因此，不會有以電磁波處理殘留於槽102中的含鈦氣體之成分的情形，故而可不在槽102形成膜而是選擇性地於基板表面103上形成膜。At this time, the electromagnetic wave is irradiated from the side surface of the substrate 100, so it is difficult to enter the groove 102 as described in FIG. 6. Therefore, the components of the titanium-containing gas remaining in the groove 102 will not be treated with electromagnetic waves, so it is possible to selectively form a film on the surface 103 of the substrate instead of forming a film in the groove 102.

再者，所使用之電磁波的波長較佳為較槽102之寬度L更大者。若波長較大則無繞入至槽102中之情形，因此可更確實地抑制槽102中之處理。Furthermore, the wavelength of the electromagnetic wave used is preferably larger than the width L of the groove 102. If the wavelength is large, there is no situation of winding into the groove 102, so the processing in the groove 102 can be suppressed more reliably.

於開始NH3 氣體之供給之後經過既定時間後，關閉閥254而停止NH3 氣體之供給。NH3 氣體之供給時間例如為2~20秒。After a predetermined time has elapsed after the start of the supply of NH 3 gas, the valve 254 is closed to stop the supply of NH 3 gas. The supply time of NH 3 gas is, for example, 2 to 20 seconds.

接著，說明第2沖洗步驟S208。於停止NH3 氣體之供給之後，執行與上述之第1沖洗步驟S204相同的第2沖洗步驟S208。第2沖洗步驟S208中之各部分的動作係與上述之第1沖洗步驟S204相同，因而省略此處之說明。Next, the second rinse step S208 will be described. After the supply of the NH 3 gas is stopped, the second flushing step S208 which is the same as the above-mentioned first flushing step S204 is performed. The operations of each part in the second flushing step S208 are the same as the above-mentioned first flushing step S204, so the description here is omitted.

接著，說明判定步驟S210。將第1氣體供給步驟S202、第1沖洗步驟S204、第2氣體供給步驟S206、第2沖洗步驟S208作為1循環，而控制器400判定是否已實施該循環既定次數(n循環)。當將循環實施既定次數時，於基板100上形成有所需膜厚之TiN層。於已實施既定次數時(S210中為Yes之情況)，結束圖4所示之處理。如上述，選擇性地於表面103上形成保護膜。Next, the determination step S210 will be described. Regarding the first gas supply step S202, the first flushing step S204, the second gas supplying step S206, and the second flushing step S208 as one cycle, the controller 400 determines whether the cycle has been performed a predetermined number of times (n cycles). When the cycle is performed a predetermined number of times, a TiN layer with a desired film thickness is formed on the substrate 100. When the predetermined number of times has been performed (in the case of Yes in S210), the processing shown in FIG. 4 ends. As mentioned above, a protective film is selectively formed on the surface 103.

更佳為，至少在第2氣體供給步驟中使基板載置台210旋轉。藉由使基板100與基板載置台210一起旋轉，可對基板100之面內更均勻地供給電磁波。More preferably, the substrate mounting table 210 is rotated at least in the second gas supply step. By rotating the substrate 100 and the substrate mounting table 210 together, electromagnetic waves can be supplied to the surface of the substrate 100 more uniformly.

接著，說明基板搬出步驟。當形成所需膜厚之TiN層之後，使基板載置台212下降，將基板100移動至搬送地點。其後，開啟閘閥149，使用機械臂(未圖示)而將基板100朝腔室202之外搬出。Next, the substrate unloading step will be described. After the TiN layer with the required film thickness is formed, the substrate mounting table 212 is lowered, and the substrate 100 is moved to the transfer location. After that, the gate valve 149 is opened, and the substrate 100 is carried out of the chamber 202 using a robot arm (not shown).

再者，於此已說明照射紫外線光之例，但亦可為微波。於此情況下，例如對基板表面之包含有含鈦氣體成分的層(或膜)供給微波而加熱等，以對膜進行處理。Furthermore, an example of irradiating ultraviolet light has been described here, but it may also be a microwave. In this case, for example, the layer (or film) containing the titanium-containing gas component on the surface of the substrate is supplied with microwaves and heated to process the film.

此外，於此以電磁波處理基板100上之含鈦氣體的成分，但不限於此，亦可對被供給之氣體照射電磁波而激發氣體。於此情況下，以所激發之氣體不進入至槽102中之方式，將能量調整為反應在基板表面結束之程度。In addition, the components of the titanium-containing gas on the substrate 100 are treated with electromagnetic waves here, but it is not limited to this, and the supplied gas may be irradiated with electromagnetic waves to excite the gas. In this case, in such a way that the excited gas does not enter the groove 102, the energy is adjusted to the extent that the reaction ends on the surface of the substrate.

(第2實施形態) 接著，一面參照圖式，一面說明第2實施形態。對於本實施形態之基板處理裝置之構成，主要使用圖7、圖8而進行說明。圖7係本實施形態之基板處理裝置300之橫截面概略圖。圖8係本實施形態之基板處理裝置300之縱截面概略圖，且為圖7所示之腔室的α-α’線剖視圖。再者，α-α’線為自α通過腔室302之中心而朝向α’的線。(Second Embodiment) Next, the second embodiment will be described with reference to the drawings. The structure of the substrate processing apparatus of the present embodiment will be mainly described using FIGS. 7 and 8. FIG. 7 is a schematic cross-sectional view of the substrate processing apparatus 300 of this embodiment. FIG. 8 is a schematic longitudinal cross-sectional view of the substrate processing apparatus 300 of this embodiment, and is a cross-sectional view taken along the line α-α' of the chamber shown in FIG. 7. In addition, the α-α' line is a line from α passing through the center of the chamber 302 toward α'.

(基板處理裝置) 說明基板處理裝置300之具體構成。再者，附加有與第1實施形態相同編號的構成為具有與第1實施形態相同功能的構成，故適宜地省略說明。此外，基板處理裝置300係藉由控制器400所控制。(Substrate processing equipment) The specific configuration of the substrate processing apparatus 300 will be described. In addition, the structure attached with the same number as the 1st Embodiment is a structure which has the same function as the 1st Embodiment, so that description is abbreviate|omitted suitably. In addition, the substrate processing apparatus 300 is controlled by the controller 400.

如圖7及圖8所示，基板處理裝置300主要以圓筒狀之氣密容器即腔室302所構成。於腔室302內構成處理基板100的處理室301。於腔室302連接有閘閥305，而基板100經由閘閥305而被搬入搬出。As shown in FIGS. 7 and 8, the substrate processing apparatus 300 is mainly composed of a chamber 302 which is a cylindrical airtight container. The processing chamber 301 for processing the substrate 100 is formed in the chamber 302. A gate valve 305 is connected to the chamber 302, and the substrate 100 is carried in and out through the gate valve 305.

處理室301具有供給處理氣體的處理區域306與供給沖洗氣體的沖洗區域307。於此，處理區域306與沖洗區域307係呈圓周狀交互地配置。例如以第1處理區域306a、第1沖洗區域307a、第2處理區域306b及第2沖洗區域307b之順序配置。如後述般，於第1處理區域306a內被供給第1氣體，於第2處理區域306b內被供給第2氣體，此外，於第1沖洗區域307a及第2沖洗區域307b被供給惰性氣體。藉此，依據被供給至各個區域內的氣體而對基板100施以既定之處理。再者，處理區域306a亦稱為第1領域，處理區域306b亦稱為第2領域，第1沖洗區域307a、第2沖洗區域307b亦稱為沖洗領域。The processing chamber 301 has a processing area 306 for supplying processing gas and a flushing area 307 for supplying flushing gas. Here, the processing area 306 and the washing area 307 are alternately arranged in a circumferential shape. For example, the first processing area 306a, the first washing area 307a, the second processing area 306b, and the second washing area 307b are arranged in this order. As described later, the first gas is supplied in the first processing area 306a, the second gas is supplied in the second processing area 306b, and the inert gas is supplied to the first flushing area 307a and the second flushing area 307b. In this way, a predetermined process is applied to the substrate 100 in accordance with the gas supplied to each area. Furthermore, the treatment area 306a is also referred to as a first area, the treatment area 306b is also referred to as a second area, and the first rinse area 307a and the second rinse area 307b are also referred to as a rinse area.

沖洗區域307係於空間上分開第1處理區域306a與第2處理區域306b的區域。沖洗區域307之頂壁308構成為較處理區域306之頂壁309更低。於第1沖洗區域307a設置有頂壁308a，於第2沖洗區域307b設置有頂壁308b。藉由將各頂壁設為較低，而使沖洗區域307之空間的壓力設為較高。藉由對該空間供給沖洗氣體，而區隔所相鄰的處理區域306。再者，沖洗氣體亦具有除去基板100上之多餘氣體的功能。The rinsing area 307 is an area that spatially separates the first processing area 306a and the second processing area 306b. The top wall 308 of the washing area 307 is configured to be lower than the top wall 309 of the processing area 306. A top wall 308a is provided in the first washing area 307a, and a top wall 308b is provided in the second washing area 307b. By setting each top wall to be lower, the pressure in the space of the washing area 307 is set to be higher. By supplying flushing gas to the space, the adjacent processing areas 306 are separated. Furthermore, the flushing gas also has the function of removing excess gas on the substrate 100.

於腔室302之中央，在腔室302之中心具有旋轉軸，且設置有旋轉自如地被構成的基板載置板317。In the center of the chamber 302, there is a rotating shaft in the center of the chamber 302, and a substrate mounting plate 317 configured to be rotatable is provided.

基板載置板317構成為可於腔室302內將複數片(例如6片)基板100配置於同一面上，且沿著旋轉方向而呈同一圓周狀地配置。於此所謂之「同一面」並非限於完全之同一面，只要為於自上面觀察基板載置板317時，複數片基板100不互相重疊地排列即可。The substrate mounting plate 317 is configured to allow a plurality of (for example, six) substrates 100 to be arranged on the same surface in the chamber 302 and to be arranged in the same circumferential shape along the rotation direction. The so-called "same surface" here is not limited to a completely same surface, as long as the plurality of substrates 100 are arranged without overlapping each other when the substrate mounting plate 317 is viewed from above.

於基板載置板317表面上之基板100的支撐位置，設置有凹部318。與進行處理之基板100的片數相同數量的凹部318係在自基板載置板317中心呈同心圓狀的位置上相互地以等間隔(例如60°間隔)配置。再者，於圖7中，為便於說明而省略圖示。A recess 318 is provided at the supporting position of the substrate 100 on the surface of the substrate mounting plate 317. The recesses 318 of the same number as the number of substrates 100 to be processed are arranged at equal intervals (for example, 60° intervals) at positions concentrically from the center of the substrate mounting plate 317. In addition, in FIG. 7, the illustration is omitted for convenience of description.

各個凹部318例如為自基板載置板317上面觀察時呈圓形，自側面觀察時呈凹形。較佳為，凹部318之直徑構成為較基板100之直徑稍大。於該凹部318之底設置有基板載置面319，藉由將基板100載置於凹部318內，而可將基板100載置於基板載置面319。Each recess 318 has a circular shape when viewed from the upper surface of the substrate mounting plate 317, and a concave shape when viewed from the side, for example. Preferably, the diameter of the recess 318 is configured to be slightly larger than the diameter of the substrate 100. A substrate placing surface 319 is provided at the bottom of the recess 318. By placing the substrate 100 in the recess 318, the substrate 100 can be placed on the substrate placing surface 319.

基板載置板317被固定於核心部321。核心部321係設置於基板載置板317之中心，而具有固定基板載置板317的功能。於核心部321之下方配置有軸322。軸322支撐核心部321。The substrate mounting plate 317 is fixed to the core part 321. The core portion 321 is disposed at the center of the substrate mounting plate 317 and has the function of fixing the substrate mounting plate 317. A shaft 322 is arranged below the core part 321. The shaft 322 supports the core part 321.

軸322之下方貫通設置在容器302底部的孔323，且在腔室302外以可氣密的容器304覆蓋。此外，與第1實施形態同樣，於軸322之下端設置有升降旋轉部218。再者，於不使軸322升降之情況下，升降旋轉部218僅稱為旋轉部218。升降旋轉部218構成為藉由控制器400之指示而可使基板載置板317旋轉、升降。The shaft 322 penetrates through a hole 323 provided at the bottom of the container 302 and is covered by an airtight container 304 outside the cavity 302. In addition, as in the first embodiment, a lifting and rotating part 218 is provided at the lower end of the shaft 322. Furthermore, when the shaft 322 is not raised and lowered, the lifting and rotating part 218 is only referred to as the rotating part 218. The up-and-down rotation part 218 is configured to rotate and up and down the substrate mounting plate 317 according to an instruction from the controller 400.

於基板載置板317之下方，配置內藏有作為加熱部的加熱器380的加熱器單元381。加熱器380加熱載置於基板載置板317的各基板100。加熱器380係沿著腔室302之形狀而呈圓周狀地配置。Below the substrate mounting plate 317, a heater unit 381 containing a heater 380 as a heating part is arranged. The heater 380 heats each substrate 100 placed on the substrate placing plate 317. The heater 380 is arranged circumferentially along the shape of the chamber 302.

於加熱器380連接有加熱器控制部387。加熱器380係電性地連接於控制器400，藉由控制器400之指示而控制對加熱器380的電力供給，而進行溫度控制。The heater control unit 387 is connected to the heater 380. The heater 380 is electrically connected to the controller 400, and the power supply to the heater 380 is controlled by the instruction of the controller 400 to perform temperature control.

於基板載置板317之外周配置有排氣構造386。排氣構造386具有排氣槽388與排氣緩衝空間389。排氣槽388、排氣緩衝空間389係沿著腔室302之形狀而構成為圓周狀。An exhaust structure 386 is arranged on the outer periphery of the substrate mounting plate 317. The exhaust structure 386 has an exhaust groove 388 and an exhaust buffer space 389. The exhaust groove 388 and the exhaust buffer space 389 are formed in a circumferential shape along the shape of the cavity 302.

於排氣構造386之底設置有排氣口391、排氣口392。排氣口391主要將被供給至處理空間306a的第1氣體、及自其上游被供給的沖洗氣體排氣。排氣口392主要將被供給至處理空間306b的第2氣體、及自其上游被供給的沖洗氣體排氣。各氣體係經由排氣槽388、排氣緩衝空間389而自排氣口391、排氣口392被排氣。An exhaust port 391 and an exhaust port 392 are provided at the bottom of the exhaust structure 386. The exhaust port 391 mainly exhausts the first gas supplied to the processing space 306a and the flushing gas supplied from the upstream thereof. The exhaust port 392 mainly exhausts the second gas supplied to the processing space 306b and the flushing gas supplied from the upstream thereof. Each gas system is exhausted from the exhaust port 391 and the exhaust port 392 via the exhaust groove 388 and the exhaust buffer space 389.

接著，說明氣體供給部。氣體供給部係與第1實施形態相同。如圖7所記載般，於腔室302具有噴嘴345、355、365、366。圖7之A係與圖2(a)之A連接。即，噴嘴345連接於供給管241。圖7之B係與圖2(b)之B連接。即，噴嘴355連接於供給管251。圖7之C係與圖2(c)之C連接。即，噴嘴365、366分別連接於供給管261。Next, the gas supply unit will be described. The gas supply unit is the same as in the first embodiment. As described in FIG. 7, the chamber 302 has nozzles 345, 355, 365, and 366. A in Fig. 7 is connected to A in Fig. 2(a). That is, the nozzle 345 is connected to the supply pipe 241. Fig. 7 B is connected with Fig. 2(b) B. That is, the nozzle 355 is connected to the supply pipe 251. The C of Fig. 7 is connected to the C of Fig. 2(c). That is, the nozzles 365 and 366 are connected to the supply pipe 261, respectively.

如圖7所示，於腔室302設置有排氣口391、排氣口392。以與排氣口391連通之方式而設置有第1排氣部334之一部分即排氣管334a。於排氣管334a，經由作為開閉閥的閥334d、作為壓力調整器(壓力調整部)的APC(Auto Pressure Controller)閥334c，而連接有作為真空排氣裝置的真空泵334b，構成為可以使處理室301內之壓力成為既定壓力(真空度)之方式進行真空排氣。As shown in FIG. 7, the chamber 302 is provided with an exhaust port 391 and an exhaust port 392. An exhaust pipe 334a, which is a part of the first exhaust portion 334, is provided to communicate with the exhaust port 391. The exhaust pipe 334a is connected to a vacuum pump 334b as a vacuum exhaust device via a valve 334d as an opening and closing valve, an APC (Auto Pressure Controller) valve 334c as a pressure regulator (pressure regulator), and is configured to enable processing Vacuum exhaust is performed so that the pressure in the chamber 301 becomes a predetermined pressure (vacuum degree).

將排氣管334a、閥334d、APC閥334c統合而稱為第1排氣部334。再者，亦可將真空泵334b包含在第1排氣部334。The exhaust pipe 334a, the valve 334d, and the APC valve 334c are collectively referred to as a first exhaust portion 334. Furthermore, the vacuum pump 334b may be included in the first exhaust part 334.

此外，以與排氣口392連通之方式設置有第2排氣部335。排氣口392係設置於處理區域306b之旋轉方向下游側。主要將第2氣體與惰性氣體排氣。In addition, a second exhaust portion 335 is provided so as to communicate with the exhaust port 392. The exhaust port 392 is provided on the downstream side in the rotation direction of the processing area 306b. Mainly exhaust the second gas and inert gas.

以與排氣口392連通之方式設置有第2排氣部335之一部分即排氣管335a。於排氣管335a，經由作為開閉閥的閥335d、作為壓力調整器(壓力調整部)的APC閥335c，而連接有作為真空排氣裝置的真空泵335b，構成為可以使處理室301內之壓力成為既定壓力(真空度)之方式進行真空排氣。An exhaust pipe 335a, which is a part of the second exhaust portion 335, is provided in communication with the exhaust port 392. The exhaust pipe 335a is connected to a vacuum pump 335b as a vacuum exhaust device via a valve 335d as an opening and closing valve, an APC valve 335c as a pressure regulator (pressure regulator), and is configured to increase the pressure in the processing chamber 301 Vacuum exhaust is performed with a predetermined pressure (vacuum degree).

將排氣管335a、閥335d、APC閥335c統合而稱為第2排氣部335。再者，亦可將真空泵335b包含在第2排氣部335。The exhaust pipe 335a, the valve 335d, and the APC valve 335c are collectively referred to as a second exhaust section 335. Furthermore, the vacuum pump 335b may be included in the second exhaust part 335.

接著，說明電磁波供給部290。窗291為腔室302之壁，且設置為鄰接於第2處理區域306b。若以旋轉方向加以考慮，則設置於噴嘴255之旋轉方向上游側且第1沖洗區域307a之下游側。Next, the electromagnetic wave supply unit 290 will be described. The window 291 is a wall of the chamber 302 and is provided adjacent to the second processing area 306b. Considering the rotation direction, it is provided on the upstream side of the rotation direction of the nozzle 255 and the downstream side of the first washing area 307a.

窗291之高度方向的中心位置係設定為與基板載置板317之高度相同高度。電磁波供給構造292所具有的指向性燈293之照射面中，高度方向中心位置係配置於較基板100之表面稍高之位置。The center position of the height direction of the window 291 is set to be the same height as the height of the substrate mounting plate 317. In the irradiation surface of the directional lamp 293 of the electromagnetic wave supply structure 292, the center position in the height direction is arranged at a position slightly higher than the surface of the substrate 100.

自電磁波供給構造292被照射的電磁波係照射至在第2處理區域306b內且噴嘴355之旋轉方向上游側之區域。因此，在第1沖洗區域307a移動而來的基板100之表面103，於被供給第2氣體之前照射有電磁波，而進行處理。The electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to an area on the upstream side in the rotation direction of the nozzle 355 in the second processing area 306 b. Therefore, the surface 103 of the substrate 100 that has moved from the first rinse region 307a is irradiated with electromagnetic waves before being supplied with the second gas for processing.

由於在供給第2氣體之前照射電磁波，因而不與氣體進行衝突，而可確實地將電磁波照射至表面103。Since electromagnetic waves are irradiated before the second gas is supplied, the surface 103 can be reliably irradiated with electromagnetic waves without colliding with the gas.

再者，於不對基板100上之層照射電磁波，而是對自噴嘴355被供給的氣體照射電磁波之情況下，較佳為將窗291設置於噴嘴355之旋轉方向下游側。藉由設置於下游側，而可將電磁波供給至噴嘴355之下游區域，因此可確實地激發第2氣體。Furthermore, when the layer on the substrate 100 is not irradiated with electromagnetic waves, but the gas supplied from the nozzle 355 is irradiated with electromagnetic waves, it is preferable to provide the window 291 on the downstream side of the nozzle 355 in the rotation direction. By being provided on the downstream side, electromagnetic waves can be supplied to the downstream area of the nozzle 355, so the second gas can be surely excited.

(基板處理步驟) 其次，使用圖9，對於第2實施形態之基板處理步驟進行說明。圖9係表示本實施形態之基板處理步驟之流程圖。於以下之說明中，基板處理裝置300之各部分構成之動作係藉由控制器400所控制。(Substrate processing steps) Next, using FIG. 9, the substrate processing steps of the second embodiment will be described. Fig. 9 is a flowchart showing the substrate processing steps of this embodiment. In the following description, the actions of the various parts of the substrate processing apparatus 300 are controlled by the controller 400.

於此，對於使用含鈦氣體作為第1氣體，使用氨氣作為第2氣體，而於基板100上形成氮化鈦(TiN)膜作為薄膜之例進行說明。Here, an example in which titanium-containing gas is used as the first gas, ammonia gas is used as the second gas, and a titanium nitride (TiN) film is formed on the substrate 100 as a thin film will be described.

說明基板搬入‧載置步驟。於圖9中省略圖示。使基板載置板317旋轉，而使凹部318移動至與閘閥305對向的位置。其次，使升降銷(未圖示)上升，而使其貫通於基板載置板317之貫通孔(未圖示)。接著，開啟閘閥305而使腔室302與真空搬送室(未圖示)連通。然後，使用晶圓移載機(未圖示)而將基板100自該移載室移載至升降銷上，其後使升降銷下降。藉此，基板100係於凹部318上以水平姿勢被支撐。Explain the board loading and placement steps. The illustration is omitted in FIG. 9. The substrate mounting plate 317 is rotated to move the recess 318 to a position facing the gate valve 305. Next, the lift pin (not shown) is raised to penetrate the through hole (not shown) of the substrate mounting plate 317. Next, the gate valve 305 is opened to connect the chamber 302 with the vacuum transfer chamber (not shown). Then, a wafer transfer machine (not shown) is used to transfer the substrate 100 from the transfer chamber to the lift pins, and then the lift pins are lowered. Thereby, the substrate 100 is supported on the concave portion 318 in a horizontal posture.

如圖5所記載般，於搬入之基板100形成有複數個支柱101、及形成在支柱101間的高縱橫比之極細寬度的槽102。在本基板處理步驟中，不於槽102中形成膜，而選擇性地於各支柱101周圍之表面103形成膜。As described in FIG. 5, a plurality of pillars 101 are formed on the substrate 100 to be carried in, and grooves 102 with a high aspect ratio and extremely thin width are formed between the pillars 101. In this substrate processing step, instead of forming a film in the groove 102, a film is selectively formed on the surface 103 around each pillar 101.

接著，以未載置有基板100的凹部318與閘閥305相對向之方式，使基板載置板317旋轉。其後，同樣地將基板載置於凹部318。重複進行至基板100被載置於全部的凹部318為止。Next, the substrate mounting plate 317 is rotated so that the recess 318 on which the substrate 100 is not mounted faces the gate valve 305. Thereafter, the substrate is placed in the recess 318 in the same manner. The process is repeated until the substrate 100 is placed in all the recesses 318.

當將基板100搬入至凹部318之後，則使基板移載機朝基板處理裝置300之外進行退避，關閉閘閥305而將腔室302內密閉。After the substrate 100 is loaded into the recess 318, the substrate transfer machine is retracted from the substrate processing apparatus 300, and the gate valve 305 is closed to seal the chamber 302.

於將基板100載置於基板載置板317時，預先對加熱器380供給電力，以基板100之表面成為既定溫度之方式控制。基板100之溫度例如為400℃以上且500℃以下。加熱器380至少在從基板搬入‧載置步驟至後述之基板搬出步驟結束為止之期間，設為常時通電之狀態。When the substrate 100 is placed on the substrate mounting plate 317, electric power is supplied to the heater 380 in advance, and it is controlled so that the surface of the substrate 100 becomes a predetermined temperature. The temperature of the substrate 100 is, for example, 400° C. or more and 500° C. or less. The heater 380 is set to be constantly energized at least during the period from the substrate carrying-in and placing step to the end of the substrate carrying-out step described later.

說明基板載置板旋轉開始步驟S310。當基板100被載置於各凹部318之後，旋轉部324使基板載置板317朝R方向旋轉。藉由使基板載置板317旋轉，基板100以第1處理區域306a、第1沖洗區域307a、第2處理區域306b、第2沖洗區域307b之順序移動。The step S310 for starting the rotation of the substrate mounting plate will be described. After the substrate 100 is placed in each recess 318, the rotating part 324 rotates the substrate placing plate 317 in the R direction. By rotating the substrate mounting plate 317, the substrate 100 moves in the order of the first processing area 306a, the first washing area 307a, the second processing area 306b, and the second washing area 307b.

說明氣體供給開始步驟S320。當加熱基板100而到達至所需的溫度，且基板載置板317到達至所需的旋轉速度之後，開啟閥244而開始對第1處理區域306a內供給含鈦氣體。與此併行，開啟閥254而對第2處理區域306b內供給NH3 氣體。The gas supply start step S320 will be described. When the substrate 100 is heated to reach the required temperature and the substrate mounting plate 317 reaches the required rotation speed, the valve 244 is opened to start supplying the titanium-containing gas into the first processing region 306a. In parallel with this, the valve 254 is opened to supply NH 3 gas into the second processing area 306b.

此時，以含鈦氣體之流量成為既定流量之方式調整MFC 243。再者，含鈦氣體之供給流量例如為50sccm以上且500sccm以下。At this time, the MFC 243 is adjusted so that the flow rate of the titanium-containing gas becomes the predetermined flow rate. Furthermore, the supply flow rate of the titanium-containing gas is, for example, 50 sccm or more and 500 sccm or less.

此外，以NH3 氣體之流量成為既定流量之方式調整MFC 253。再者，NH3 氣體之供給流量例如為100sccm以上且5000sccm以下。In addition, the MFC 253 is adjusted so that the flow rate of the NH 3 gas becomes the predetermined flow rate. In addition, the supply flow rate of the NH 3 gas is, for example, 100 sccm or more and 5000 sccm or less.

再者，於基板搬入‧載置步驟S310後，持續地藉由第1排氣部334、第2排氣部335而對處理室301內進行排氣，且自惰性氣體供給部260對第1沖洗區域307a內及第2沖洗區域307b內供給作為沖洗氣體的N2 氣體。Furthermore, after the substrate loading and placement step S310, the processing chamber 301 is continuously evacuated by the first exhaust portion 334 and the second exhaust portion 335, and the inert gas supply portion 260 evacuates the first In the flushing area 307a and the second flushing area 307b, N 2 gas is supplied as a flushing gas.

說明成膜步驟S330。於此，對於成膜步驟S330之基本流程進行說明，詳細內容如後所述。在成膜步驟S330中，各基板100係於第1處理區域306a形成含鈦層，進而，於旋轉後之第2處理區域306b，含鈦層與NH3 氣體進行反應，於基板100上形成含鈦膜。以成為所需膜厚之方式，使基板載置部旋轉既定次數。The film forming step S330 will be described. Here, the basic flow of the film forming step S330 will be described, and the details will be described later. In the film formation step S330, each substrate 100 forms a titanium-containing layer in the first processing area 306a, and further, in the second processing area 306b after the rotation, the titanium-containing layer reacts with NH 3 gas to form a titanium-containing layer on the substrate 100 Titanium film. The substrate mounting portion is rotated a predetermined number of times so that the film thickness becomes the required film thickness.

說明氣體供給停止步驟S340。於使其旋轉既定次數之後，關閉閥244、閥254，停止含鈦氣體對第1處理區域306a之供給、及NH3 氣體對第2處理區域306b之供給。The gas supply stop step S340 will be described. After it is rotated a predetermined number of times, the valve 244 and the valve 254 are closed, and the supply of the titanium-containing gas to the first processing area 306a and the supply of the NH 3 gas to the second processing area 306b are stopped.

說明基板載置板旋轉停止步驟S350。於氣體供給停止S340之後，停止基板載置板317之旋轉。The step S350 of stopping the rotation of the substrate mounting plate will be described. After the gas supply is stopped S340, the rotation of the substrate mounting plate 317 is stopped.

說明基板搬出步驟。在圖9中省略圖示。以將欲搬出之基板100移動至與閘閥305對向的位置之方式使基板載置板旋轉。其後，以與基板搬入時相反之方法將基板搬出。重複該等動作而將全部的基板100搬出。Describe the board unloading procedure. Illustration is omitted in FIG. 9. The substrate mounting plate is rotated so as to move the substrate 100 to be carried out to a position facing the gate valve 305. After that, the substrate is carried out by the method opposite to that when the substrate is carried in. These operations are repeated to unload all the substrates 100.

接著，說明成膜步驟S330之詳細內容。於成膜步驟S330之間，藉由基板載置板317之旋轉，使複數片基板100依序通過第1處理區域306a、第1沖洗區域307a、第2處理區域306b、及第2沖洗區域307b。Next, the details of the film forming step S330 will be described. During the film forming step S330, by the rotation of the substrate mounting plate 317, the plurality of substrates 100 sequentially pass through the first processing area 306a, the first processing area 307a, the second processing area 306b, and the second processing area 307b .

成膜步驟S330之詳細內容係與圖2之流程相同。對於從第1氣體供給步驟S202至第2沖洗步驟S208，以被載置於基板載置部317上之複數片基板100內的一片基板100為主而進行說明。以下，以不同點為主而進行說明。The detailed content of the film forming step S330 is the same as the flow of FIG. 2. From the first gas supply step S202 to the second rinsing step S208, one substrate 100 among the plurality of substrates 100 placed on the substrate mounting portion 317 will be mainly described. Hereinafter, the difference will be mainly explained.

說明本實施形態中之第1氣體供給步驟S202。於第1氣體供給步驟S202中，當基板100通過第1處理區域306a時，含鈦氣體被供給至基板100。被供給之含鈦氣體被分解，而於基板100上形成含鈦層。此時，如圖6所記載般，含鈦氣體之多數成分104附著於基板表面103，但一部分進入至槽102內。The first gas supply step S202 in this embodiment will be described. In the first gas supply step S202, when the substrate 100 passes through the first processing region 306a, the titanium-containing gas is supplied to the substrate 100. The supplied titanium-containing gas is decomposed, and a titanium-containing layer is formed on the substrate 100. At this time, as described in FIG. 6, most of the components 104 of the titanium-containing gas adhere to the surface 103 of the substrate, but a part of it enters the groove 102.

說明本實施形態中之第1沖洗步驟S204。基板100於通過第1處理區域306a之後，移動至第1沖洗區域307a。於基板100通過第1沖洗區域307a時，於第1處理區域306a中，未能在基板100上形成穩固結合的含鈦氣體之成分104係藉由惰性氣體而自基板100上被除去。此時，進入至槽102中的第1氣體成分亦被除去，但難以將其全部除去。The first flushing step S204 in this embodiment will be described. After the substrate 100 passes through the first processing area 306a, it moves to the first rinse area 307a. When the substrate 100 passes through the first rinse region 307a, in the first processing region 306a, the component 104 of the titanium-containing gas that cannot form a firm bond on the substrate 100 is removed from the substrate 100 by the inert gas. At this time, the first gas component entering the tank 102 is also removed, but it is difficult to remove all of it.

說明第2氣體供給步驟S206。基板100係於通過第1沖洗區域307a後移動至第2處理區域306b。當基板100通過噴嘴355之上游時，自電磁波供給部290朝向基板100照射電磁波。被照射之電磁波經由窗291而到達至基板100。指向性燈293之照射面中，高度方向中心位置係與窗290之高度方向中心位置相同，因此，被照射之電磁波係如圖6之虛線箭頭105般，不被供給至槽102中，而是對基板100之表面103供給。The second gas supply step S206 will be described. The substrate 100 passes through the first rinse area 307a and then moves to the second processing area 306b. When the substrate 100 passes upstream of the nozzle 355, electromagnetic waves are irradiated toward the substrate 100 from the electromagnetic wave supply part 290. The irradiated electromagnetic wave reaches the substrate 100 through the window 291. In the irradiation surface of the directional lamp 293, the center position in the height direction is the same as the center position in the height direction of the window 290. Therefore, the irradiated electromagnetic waves are not supplied to the groove 102 as shown by the dotted arrow 105 in FIG. It is supplied to the surface 103 of the substrate 100.

與第1實施形態相同，電磁波切斷基板表面103之含鈦氣體成分間之結合而進行分解。對於該切斷部分供給因熱而被分解的NH3 氣體，被切斷的含鈦氣體之成分與NH3 氣體之成分結合，形成結合度高之層。As in the first embodiment, the electromagnetic wave cuts the bonds between the titanium-containing gas components on the substrate surface 103 and decomposes them. The NH 3 gas decomposed by heat is supplied to the cut portion, and the components of the cut titanium-containing gas are combined with the NH 3 gas to form a layer with a high degree of bonding.

此時，電磁波自基板100之側面照射，因此如圖6所記載般，難以進入槽102中。因此，不具有以電磁波處理殘留於槽102中之含鈦氣體之成分的情形。因此，可不在槽102中形成膜而是選擇性地於基板表面103上形成膜。At this time, the electromagnetic wave is irradiated from the side surface of the substrate 100, so it is difficult to enter the groove 102 as shown in FIG. Therefore, there is no situation in which the components of the titanium-containing gas remaining in the tank 102 are treated with electromagnetic waves. Therefore, instead of forming a film in the groove 102, a film may be selectively formed on the substrate surface 103.

說明第2沖洗步驟S208。基板100於通過第2處理區域306b之後，移動至第2沖洗區域307b。於基板100通過第2沖洗區域307b時，於第2處理區域306c中，自基板100上之層脫離的HCl、NH4 Cl氣體、或剩餘的氣體等係藉由惰性氣體而自基板100上被除去。The second flushing step S208 will be described. After the substrate 100 passes through the second processing area 306b, it moves to the second rinse area 307b. When the substrate 100 passes through the second rinse area 307b, in the second processing area 306c, the HCl, NH 4 Cl gas, or the remaining gas that has been released from the layer on the substrate 100 is removed from the substrate 100 by the inert gas. Remove.

如此，對基板依序地供給相互反應之至少2個第2氣體。將以上之第1氣體供給步驟S202、第1沖洗步驟S204、第2氣體供給步驟S206、及第2沖洗步驟S208作為1循環。In this way, at least two second gases that react with each other are sequentially supplied to the substrate. The above-mentioned first gas supply step S202, first flushing step S204, second gas supply step S206, and second flushing step S208 are regarded as one cycle.

說明判定步驟S210。控制器400判定是否實施上述1循環有既定次數。具體而言，控制器400對基板載置板317之旋轉數進行計數。The determination step S210 will be described. The controller 400 determines whether or not the above-mentioned one cycle has been implemented a predetermined number of times. Specifically, the controller 400 counts the number of rotations of the substrate mounting plate 317.

於未實施上述1循環有既定次數時(S210中為No之情況下)，進而持續基板載置板317之旋轉，重複進行具有第1氣體供給步驟S202、第1沖洗步驟S204、第2氣體供給步驟S206、第2沖洗步驟S208的循環。藉由如此之積層而形成薄膜。When the above-mentioned 1 cycle is not performed for a predetermined number of times (in the case of No in S210), the rotation of the substrate mounting plate 317 is continued, and the first gas supply step S202, the first flushing step S204, and the second gas supply are repeated. Step S206, the loop of the second flushing step S208. A thin film is formed by such a buildup.

於已實施上述1循環有既定次數時(S210中為Yes之情況下)，結束成膜步驟S330。如此，藉由實施上述1循環有既定次數，形成積層有既定膜厚的薄膜。如以上所述，選擇性地於表面103上形成保護膜。When the above-mentioned 1 cycle has been performed for a predetermined number of times (in the case of Yes in S210), the film forming step S330 is ended. In this way, by performing the above-mentioned one cycle for a predetermined number of times, a thin film with a predetermined film thickness is formed. As described above, a protective film is selectively formed on the surface 103.

於是，如前述般，各領域受到相同加熱器之影響。因此，難以藉由不同溫度而分別處理第1氣體與第2氣體。相對於此，於本實施形態之情況下，在第2領域中，可獨立於其他領域而供給電磁波，因此可填補能量。即，可獨立地使基板100升溫等。因此，針對以不同能量處理第1氣體與第2氣體之情況，例如針對以不同溫度處理第1氣體與第2氣體之情況則存在有價值。Therefore, as mentioned above, all areas are affected by the same heater. Therefore, it is difficult to separately treat the first gas and the second gas at different temperatures. In contrast, in the case of the present embodiment, in the second area, electromagnetic waves can be supplied independently of other areas, so energy can be filled. That is, it is possible to independently raise the temperature of the substrate 100 or the like. Therefore, it is valuable to treat the first gas and the second gas with different energies, for example, to treat the first gas and the second gas with different temperatures.

(第3實施形態) 接著，說明第3實施形態。第3實施形態係於基板載置台上與第1實施形態不同。而其他構成與第1實施形態相同。以下，使用圖10而以相異點為主進行說明。再者，虛線箭頭表示自電磁波供給構造292被照射的電磁波。(Third Embodiment) Next, the third embodiment will be described. The third embodiment is different from the first embodiment on the substrate mounting table. The other structure is the same as that of the first embodiment. Hereinafter, the difference will be mainly described using FIG. 10. In addition, the dashed arrow indicates the electromagnetic wave irradiated from the electromagnetic wave supply structure 292.

首先，說明圖1之實施形態中之顧慮事項。於第1實施形態之情況下，雖自電磁波供給構造292被照射的電磁波被照射至基板表面，但存在有因指向性燈293之裝設位置而使電磁波無法到達至基板100中心的情形。即，有基板100之處理狀態變得不均勻之情形。First, the concerns in the embodiment shown in Fig. 1 will be explained. In the case of the first embodiment, although the electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to the surface of the substrate, the electromagnetic wave may not reach the center of the substrate 100 due to the installation position of the directional lamp 293. That is, the processing state of the substrate 100 may become uneven.

於裝設者裝設指向性燈293時，設定為使電磁波到達至基板100之中心，但因裝設精度等而難以實現。例如，有如下情形，即，因裝設精度而成為電磁波稍微向上地被照射的角度，結果未能與基板100之中心產生碰撞。When the installer installs the directional lamp 293, it is set so that the electromagnetic wave reaches the center of the substrate 100, but it is difficult to realize it due to the accuracy of the installation. For example, there is a case where the electromagnetic wave is irradiated slightly upward due to the installation accuracy, and as a result, it fails to collide with the center of the substrate 100.

於此，在本實施形態中，使基板載置台212具有傾斜，並且使基板載置台212旋轉。因具有傾斜，而可使指向性燈293之照射面的中心軸與基板載置面211交叉。進而，由於使基板載置面211在具有傾斜之狀態下旋轉，而可使被載置於此之基板100在被斜向支撐之狀態下旋轉。再者，以旋轉時基板100之位置不偏移之方式，於基板載置台212設置凹部212a，亦可將基板100載置於凹部212a內。Here, in this embodiment, the substrate mounting table 212 is inclined, and the substrate mounting table 212 is rotated. Due to the inclination, the central axis of the irradiation surface of the directional lamp 293 can cross the substrate placement surface 211. Furthermore, since the substrate placing surface 211 is rotated while being inclined, the substrate 100 placed thereon can be rotated while being supported obliquely. Furthermore, the recess 212a is provided on the substrate mounting table 212 so that the position of the substrate 100 does not shift during rotation, and the substrate 100 can also be placed in the recess 212a.

藉由設為如此構成，即便於指向性燈293之裝設精度低，且電磁波之方向變得稍微向上時，仍可使電磁波到達至基板100之中心。進而，由於以使基板100自轉，並使基板100之端部靠近至電磁波供給部292之方式進行控制，因而即便對於基板100之端部，仍能使電磁波到達。With such a configuration, even when the installation accuracy of the directional lamp 293 is low and the direction of the electromagnetic wave becomes slightly upward, the electromagnetic wave can still reach the center of the substrate 100. Furthermore, since the control is performed so that the substrate 100 is rotated and the end of the substrate 100 is brought close to the electromagnetic wave supply part 292, the electromagnetic wave can be reached even for the end of the substrate 100.

(第4實施形態) 接著，說明第4實施形態。第4實施形態係於基板載置板317上與第2實施形態不同。而其他構成與第1實施形態相同。以下，使用圖11而以相異點為主進行說明。再者，虛線箭頭表示自電磁波供給構造292被照射的電磁波。(Fourth Embodiment) Next, the fourth embodiment will be described. The fourth embodiment is different from the second embodiment in the substrate mounting plate 317. The other structure is the same as that of the first embodiment. Hereinafter, the difference will be mainly described using FIG. 11. In addition, the dashed arrow indicates the electromagnetic wave irradiated from the electromagnetic wave supply structure 292.

首先，說明第2實施形態中之顧慮事項。於此，雖自電磁波供給構造292被照射的電磁波被照射至基板表面，但存在有因指向性燈293之裝設位置而使電磁波無法到達至基板100中心的情形。此係與第1實施形態相同，因裝設精度之問題而導致。First, the concerns in the second embodiment will be explained. Here, although the electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to the surface of the substrate, there are cases where the electromagnetic wave cannot reach the center of the substrate 100 due to the installation position of the directional lamp 293. This is the same as the first embodiment, and is caused by the problem of installation accuracy.

於此，在本實施形態中，使基板載置板317具有傾斜，並且使基板載置板317旋轉。基板載置板317構成為，自中心至端部朝下方傾斜。Here, in this embodiment, the substrate mounting plate 317 is inclined, and the substrate mounting plate 317 is rotated. The substrate mounting plate 317 is configured to incline downward from the center to the end.

於此情況下，由於凹部318亦具有傾斜，故被載置於此的基板100係在被斜向支撐之狀態下旋轉。因此，與第3實施形態相同，即便於指向性燈293之裝設精度低，且電磁波之方向變得稍微向上時，仍可使電磁波到達至基板100之中心。進而，由於使基板100公轉，因而可使電磁波之照射量在複數片基板100間均勻。因此，可使基板100間之處理均勻。In this case, since the recess 318 also has an inclination, the substrate 100 placed thereon is rotated while being supported diagonally. Therefore, as in the third embodiment, even when the installation accuracy of the directional lamp 293 is low and the direction of the electromagnetic wave becomes slightly upward, the electromagnetic wave can still reach the center of the substrate 100. Furthermore, since the substrate 100 is revolved, the irradiation amount of electromagnetic waves can be made uniform among the plurality of substrates 100. Therefore, the processing between the substrates 100 can be made uniform.

(第5實施形態) 接著，說明第5實施形態。第5實施形態係使第4實施形態變形而成者，而於基板載置板317之傾斜上不同。而其他構成與第3實施形態相同。以下，使用圖12而以相異點為主進行說明。(Fifth Embodiment) Next, the fifth embodiment will be described. The fifth embodiment is a modification of the fourth embodiment, and is different in the inclination of the substrate mounting plate 317. The other structure is the same as that of the third embodiment. Hereinafter, the difference will be mainly described using FIG. 12.

在本實施形態中，使基板載置板317具有傾斜，並且使基板載置板317旋轉。基板載置板317構成為，自中心至端部朝上方傾斜。In this embodiment, the substrate mounting plate 317 is inclined, and the substrate mounting plate 317 is rotated. The substrate mounting plate 317 is configured to incline upward from the center to the end.

於此情況下，由於凹部318亦具有傾斜，故被載置於此的基板100係在被斜向支撐之狀態下旋轉。因此，與第4實施形態相同，即便於指向性燈293之裝設精度低，且電磁波之方向變得稍微向上時，仍可使電磁波到達基板100之中心。進而，由於凹部318之外周側朝向上方，即便使基板100公轉而離心力產生運用，而基板100碰撞至凹部318之外周。因此，不存在有基板100自凹部飛出之情形。In this case, since the recess 318 also has an inclination, the substrate 100 placed thereon is rotated while being supported diagonally. Therefore, as in the fourth embodiment, even when the installation accuracy of the directional lamp 293 is low and the direction of the electromagnetic wave becomes slightly upward, the electromagnetic wave can still reach the center of the substrate 100. Furthermore, since the outer peripheral side of the concave portion 318 faces upward, even if the substrate 100 is revolved and centrifugal force is applied, the substrate 100 collides against the outer periphery of the concave portion 318. Therefore, there is no situation where the substrate 100 flies out of the recessed portion.

以上，已說明本發明之實施形態。於該等實施形態中，對於使用含鈦氣體作為第1氣體之情況進行說明，但不限於此，亦可因處理內容之不同而使用含其他金屬之氣體、含矽氣體。此外，雖使用含氮氣體作為第2氣體，但不限於此，亦可因處理內容之不同而使用含氧氣體、含氫氣體。The embodiments of the present invention have been described above. In these embodiments, the case where titanium-containing gas is used as the first gas is described, but it is not limited to this, and gas containing other metals or silicon-containing gas may be used depending on the processing content. In addition, although nitrogen-containing gas is used as the second gas, it is not limited to this, and oxygen-containing gas or hydrogen-containing gas may be used depending on the processing content.

此外，雖以N2 氣體作為惰性氣體為例而進行說明，但只要為不與處理氣體反應的氣體，則不限於此。例如可使用氦氣(He)、氖氣(Ne)、氬氣(Ar)等之稀有氣體。In addition, although N 2 gas is used as an inert gas as an example for description, it is not limited to this as long as it is a gas that does not react with the processing gas. For example, rare gases such as helium (He), neon (Ne), and argon (Ar) can be used.

此外，在上述之說明中，雖揭示「相同」，但只要為實質相同即可，例如於與基板載置面相同高度之情況下，亦包含較基板載置面稍高、或稍低之狀態。In addition, in the above description, although "same" is disclosed, it is sufficient as long as it is substantially the same. For example, when the height is the same as the substrate mounting surface, it also includes a state slightly higher or lower than the substrate mounting surface. .

100:基板 101:支柱 102:槽 103:表面 104:成分 105:箭頭 148:基板搬入搬出口 149:閘閥 200:基板處理裝置 201:處理室 202:腔室(容器) 202a:上部容器 202b:下部容器 205:處理空間 206:搬送空間 207:升降銷 210:基板支撐部(基板載置台) 211:基板載置面 212:基板載置台 212a:凹部 213:加熱器 214:貫通孔 216:支撐板 217:軸 218:升降旋轉部(旋轉部) 218a:支撐軸 218b:運作部 218c:升降部 218d:旋轉機構 219:波紋管 220:溫度控制部 230:簇射頭 231:蓋 232:凸緣 233:定位部 234:緩衝空間 235:第1氣體供給孔 236:第2氣體供給孔 237:沖洗氣體供給孔 240:第1氣體供給部 241:第1氣體供給管 242:第1氣體供給源 243:MFC 244:閥 250:第2氣體供給部 251:第2氣體供給管 252:第2氣體供給源 253:MFC 254:閥 255:噴嘴 260:沖洗氣體供給部(惰性氣體供給部) 261:沖洗氣體供給管 262:沖洗氣體供給源 263:MFC 264:閥 280:排氣部 281:排氣管 282:APC 283:壓力檢測部 284:閥 285:泵 290:電磁波供給部 291:窗 292:電磁波供給構造(電磁波供給部) 293:指向性燈 294:電磁波供給控制部 300:基板處理裝置 301:處理室 302:腔室(容器) 304:容器 305:閘閥 306:處理區域 306a:第1處理區域(處理空間) 306b:第2處理區域(處理空間) 306c:第2處理區域 307:沖洗區域 307a:第1沖洗區域 307b:第2沖洗區域 308:(沖洗區域之)頂壁 308a、308b:頂壁 309:(處理區域之)頂壁 317:基板載置板(基板載置部) 318:凹部 319:基板載置面 321:核心部 322:軸 323:孔 324:旋轉部 334:第1排氣部 334a:排氣管 334b:真空泵 334c:APC閥 334d:閥 335:第2排氣部 335a:排氣管 335b:真空泵 335c:APC閥 335d:閥 345、355、365、366:噴嘴 380:加熱器 381:加熱器單元 386:排氣構造 387:加熱器控制部 388:排氣槽 389:排氣緩衝空間 391、392:排氣口 400:控制器 401:運算部 402:暫時儲存部(儲存部) 403:儲存部 404:發送接收部 411:發送接收部 412:外部儲存裝置 413:輸入輸出裝置 420:上位裝置 L:寬度 R:方向100: substrate 101: Pillar 102: Slot 103: Surface 104: Ingredients 105: Arrow 148: Board load in and out 149: Gate Valve 200: Substrate processing device 201: Processing Room 202: Chamber (container) 202a: upper container 202b: Lower container 205: processing space 206: transport space 207: Lift pin 210: Substrate support (substrate mounting table) 211: substrate placement surface 212: substrate mounting table 212a: recess 213: heater 214: Through hole 216: support plate 217: Axis 218: Lifting and rotating part (rotating part) 218a: Support shaft 218b: Operations Department 218c: Lifting part 218d: Rotating mechanism 219: Bellows 220: Temperature Control Department 230: shower head 231: cover 232: Flange 233: Positioning Department 234: buffer space 235: The first gas supply hole 236: 2nd gas supply hole 237: flushing gas supply hole 240: The first gas supply part 241: The first gas supply pipe 242: The first gas supply source 243: MFC 244: Valve 250: The second gas supply part 251: The second gas supply pipe 252: Second gas supply source 253: MFC 254: Valve 255: Nozzle 260: flushing gas supply part (inert gas supply part) 261: flushing gas supply pipe 262: flushing gas supply source 263: MFC 264: Valve 280: Exhaust Department 281: Exhaust Pipe 282: APC 283: Pressure Detection Department 284: Valve 285: Pump 290: Electromagnetic Wave Supply Department 291: window 292: Electromagnetic wave supply structure (electromagnetic wave supply part) 293: Directional light 294: Electromagnetic wave supply control unit 300: substrate processing device 301: Processing Room 302: Chamber (container) 304: container 305: Gate Valve 306: Processing Area 306a: The first processing area (processing space) 306b: The second processing area (processing space) 306c: 2nd processing area 307: flush area 307a: First flush area 307b: 2nd flush area 308: (Flushing Area) Top Wall 308a, 308b: top wall 309: (processing area) top wall 317: Substrate mounting plate (substrate mounting part) 318: Concave 319: substrate placement surface 321: Core Department 322: Shaft 323: hole 324: Rotating part 334: First Exhaust 334a: Exhaust pipe 334b: Vacuum pump 334c: APC valve 334d: Valve 335: Second Exhaust 335a: Exhaust pipe 335b: Vacuum pump 335c: APC valve 335d: Valve 345, 355, 365, 366: nozzle 380: heater 381: heater unit 386: Exhaust Structure 387: Heater Control Unit 388: Exhaust Slot 389: Exhaust buffer space 391, 392: exhaust port 400: Controller 401: Computing Department 402: Temporary Storage Unit (Storage Unit) 403: Storage Department 404: Sending and receiving department 411: Sending and receiving department 412: External storage device 413: input and output devices 420: Upper device L: width R: direction

圖1係說明第1實施形態之基板處理裝置之說明圖。 圖2(a)至(c)係說明氣體供給部之說明圖。 圖3係說明基板處理裝置之控制器之說明圖。 圖4係說明基板處理流程之說明圖。 圖5係說明基板的狀態之說明圖。 圖6係說明基板的狀態之說明圖。 圖7係說明第2實施形態之基板處理裝置之說明圖。 圖8係說明第2實施形態之基板處理裝置之說明圖。 圖9係說明基板處理流程之說明圖。 圖10係說明第3實施形態之基板處理裝置之說明圖。 圖11係說明第4實施形態之基板處理裝置之說明圖。 圖12係說明第5實施形態之基板處理裝置之說明圖。FIG. 1 is an explanatory diagram for explaining the substrate processing apparatus of the first embodiment. Figures 2 (a) to (c) are explanatory diagrams for explaining the gas supply part. Fig. 3 is an explanatory diagram illustrating the controller of the substrate processing apparatus. Fig. 4 is an explanatory diagram for explaining the substrate processing flow. Fig. 5 is an explanatory diagram for explaining the state of the substrate. Fig. 6 is an explanatory diagram for explaining the state of the substrate. Fig. 7 is an explanatory diagram for explaining the substrate processing apparatus of the second embodiment. Fig. 8 is an explanatory diagram for explaining the substrate processing apparatus of the second embodiment. FIG. 9 is an explanatory diagram for explaining the flow of substrate processing. Fig. 10 is an explanatory diagram for explaining the substrate processing apparatus of the third embodiment. Fig. 11 is an explanatory diagram for explaining the substrate processing apparatus of the fourth embodiment. Fig. 12 is an explanatory diagram for explaining the substrate processing apparatus of the fifth embodiment.

100:基板 100: substrate

148:基板搬入搬出口 148: Board load in and out

149:閘閥 149: Gate Valve

200:基板處理裝置 200: Substrate processing device

201:處理室 201: Processing Room

202:腔室(容器) 202: Chamber (container)

202a:上部容器 202a: upper container

202b:下部容器 202b: Lower container

205:處理空間 205: processing space

206:搬送空間 206: transport space

207:升降銷 207: Lift pin

210:基板支撐部(基板載置台) 210: Substrate support (substrate mounting table)

211:基板載置面 211: substrate placement surface

212:基板載置台 212: substrate mounting table

213:加熱器 213: heater

214:貫通孔 214: Through hole

216:支撐板 216: support plate

217:軸 217: Axis

218:升降旋轉部(旋轉部) 218: Lifting and rotating part (rotating part)

218a:支撐軸 218a: Support shaft

218b:運作部 218b: Operations Department

218c:升降部 218c: Lifting part

218d:旋轉機構 218d: Rotating mechanism

219:波紋管 219: Bellows

220:溫度控制部 220: Temperature Control Department

230:簇射頭 230: shower head

231:蓋 231: cover

232:凸緣 232: Flange

233:定位部 233: Positioning Department

234:緩衝空間 234: buffer space

235:第1氣體供給孔 235: The first gas supply hole

236:第2氣體供給孔 236: 2nd gas supply hole

237:沖洗氣體供給孔 237: flushing gas supply hole

241:第1氣體供給管 241: The first gas supply pipe

251:第2氣體供給管 251: The second gas supply pipe

261:沖洗氣體供給管 261: flushing gas supply pipe

280:排氣部 280: Exhaust Department

281:排氣管 281: Exhaust Pipe

282:APC 282: APC

283:壓力檢測部 283: Pressure Detection Department

284:閥 284: Valve

285:泵 285: Pump

290:電磁波供給部 290: Electromagnetic Wave Supply Department

291:窗 291: window

292:電磁波供給構造(電磁波供給部) 292: Electromagnetic wave supply structure (electromagnetic wave supply part)

293:指向性燈 293: Directional light

294:電磁波供給控制部 294: Electromagnetic wave supply control unit

400:控制器 400: Controller

Claims (20)

一種基板處理裝置，其具備有： 基板載置部，其被備置在處理室內，且具有基板載置面，該基板載置面載置具有構成複數個槽的支柱的基板； 氣體供給部，其將處理氣體供給至上述處理室； 排氣部，其自上述處理室將環境氣體排氣；及 電磁波供給部，其不對上述槽之中進行處理，而以處理上述基板之表面之方式自上述基板之側向供給電磁波。A substrate processing device is provided with: A substrate mounting portion, which is prepared in the processing chamber and has a substrate mounting surface on which a substrate having pillars forming a plurality of grooves is mounted; A gas supply part, which supplies processing gas to the above-mentioned processing chamber; Exhaust part, which exhausts ambient gas from the aforementioned processing chamber; and The electromagnetic wave supply unit does not process the grooves, but supplies electromagnetic waves from the side of the substrate by processing the surface of the substrate. 如請求項1之基板處理裝置，其中，構成為，自上述電磁波供給部被照射的電磁波之波長較上述槽之寬度更長。The substrate processing apparatus according to claim 1, wherein the wavelength of the electromagnetic wave irradiated from the electromagnetic wave supply unit is longer than the width of the groove. 如請求項2之基板處理裝置，其中，上述電磁波供給部具有指向性燈，上述指向性燈之放射面中心的高度係設定為與上述處理氣體被供給至上述處理室之期間所配設的上述基板載置面之高度相同的高度。The substrate processing apparatus according to claim 2, wherein the electromagnetic wave supply unit has a directional lamp, and the height of the center of the radiation surface of the directional lamp is set to be the same as that of the time when the processing gas is supplied to the processing chamber. The height of the substrate mounting surface is the same. 如請求項3之基板處理裝置，其中，以上述指向性燈之照射面的中心軸與上述基板載置面交叉之方式配設上述指向性燈。The substrate processing apparatus according to claim 3, wherein the directional lamp is arranged such that the central axis of the irradiation surface of the directional lamp crosses the substrate mounting surface. 如請求項4之基板處理裝置，其中，構成為，上述氣體供給部具有供給第1氣體的第1氣體供給部、供給與上述第1氣體進行反應之第2氣體的第2氣體供給部、及供給沖洗氣體的沖洗氣體供給部， 上述處理室具有被供給上述第1氣體的第1領域、被供給上述第2氣體的第2領域、及被供給沖洗氣體的沖洗領域， 於上述基板載置部呈圓周狀地配設有複數個上述基板載置面，藉由上述基板載置部旋轉，而使複數個上述基板通過各個上述領域。A substrate processing apparatus according to claim 4, wherein the gas supply unit has a first gas supply unit that supplies a first gas, a second gas supply unit that supplies a second gas that reacts with the first gas, and The flushing gas supply part for supplying flushing gas, The processing chamber has a first area to which the first gas is supplied, a second area to which the second gas is supplied, and a flushing area to which flushing gas is supplied, and A plurality of the substrate mounting surfaces are arranged in a circumferential shape on the substrate mounting portion, and the plurality of substrates are passed through the respective areas by the rotation of the substrate mounting portion. 如請求項1之基板處理裝置，其中，上述電磁波供給部具有指向性燈，上述指向性燈之放射面中心的高度係設定為與上述處理氣體被供給至上述處理室之期間所配設的上述基板載置面之高度相同的高度。The substrate processing apparatus according to claim 1, wherein the electromagnetic wave supply unit has a directional lamp, and the height of the center of the radiation surface of the directional lamp is set to be the same as that of the time when the processing gas is supplied to the processing chamber. The height of the substrate mounting surface is the same. 如請求項6之基板處理裝置，其中，以上述指向性燈之照射面的中心軸與上述基板載置面交叉之方式配設上述指向性燈。The substrate processing apparatus according to claim 6, wherein the directional lamp is arranged such that the central axis of the irradiation surface of the directional lamp crosses the substrate placement surface. 如請求項7之基板處理裝置，其中，構成為，上述氣體供給部具有供給第1氣體的第1氣體供給部、供給與上述第1氣體進行反應之第2氣體的第2氣體供給部、及供給沖洗氣體的沖洗氣體供給部， 上述處理室具有被供給上述第1氣體的第1領域、被供給上述第2氣體的第2領域、及被供給沖洗氣體的沖洗領域， 於上述基板載置部呈圓周狀地配設有複數個上述基板載置面，藉由上述基板載置部旋轉，而使複數個上述基板通過各個上述領域。A substrate processing apparatus according to claim 7, wherein the gas supply unit has a first gas supply unit that supplies a first gas, a second gas supply unit that supplies a second gas that reacts with the first gas, and The flushing gas supply part for supplying flushing gas, The processing chamber has a first area to which the first gas is supplied, a second area to which the second gas is supplied, and a flushing area to which flushing gas is supplied, and A plurality of the substrate mounting surfaces are arranged in a circumferential shape on the substrate mounting portion, and the plurality of substrates are passed through the respective areas by the rotation of the substrate mounting portion. 如請求項6之基板處理裝置，其中，構成為，上述氣體供給部具有供給第1氣體的第1氣體供給部、供給與上述第1氣體進行反應之第2氣體的第2氣體供給部、及供給沖洗氣體的沖洗氣體供給部， 上述處理室具有被供給上述第1氣體的第1領域、被供給上述第2氣體的第2領域、及被供給沖洗氣體的沖洗領域， 於上述基板載置部呈圓周狀地配設有複數個上述基板載置面，藉由上述基板載置部旋轉，而使複數個上述基板通過各個上述領域。The substrate processing apparatus according to claim 6, wherein the gas supply unit has a first gas supply unit that supplies a first gas, a second gas supply unit that supplies a second gas that reacts with the first gas, and The flushing gas supply part for supplying flushing gas, The processing chamber has a first area to which the first gas is supplied, a second area to which the second gas is supplied, and a flushing area to which flushing gas is supplied, and A plurality of the substrate mounting surfaces are arranged in a circumferential shape on the substrate mounting portion, and the plurality of substrates are passed through the respective areas by the rotation of the substrate mounting portion. 如請求項1之基板處理裝置，其中，構成為，上述氣體供給部具有供給第1氣體的第1氣體供給部、供給與上述第1氣體進行反應之第2氣體的第2氣體供給部、及供給沖洗氣體的沖洗氣體供給部， 上述處理室具有被供給上述第1氣體的第1領域、被供給上述第2氣體的第2領域、及被供給沖洗氣體的沖洗領域， 於上述基板載置部呈圓周狀地配設有複數個上述基板載置面，藉由上述基板載置部旋轉，而使複數個上述基板通過各個上述領域。A substrate processing apparatus according to claim 1, wherein the gas supply unit has a first gas supply unit that supplies a first gas, a second gas supply unit that supplies a second gas that reacts with the first gas, and The flushing gas supply part for supplying flushing gas, The processing chamber has a first area to which the first gas is supplied, a second area to which the second gas is supplied, and a flushing area to which flushing gas is supplied, and A plurality of the substrate mounting surfaces are arranged in a circumferential shape on the substrate mounting portion, and the plurality of substrates are passed through the respective areas by the rotation of the substrate mounting portion. 如請求項10之基板處理裝置，其中，構成為，上述基板載置部從中心部至端部朝上方傾斜。The substrate processing apparatus according to claim 10, wherein the substrate mounting portion is configured to incline upward from the center portion to the end portion. 如請求項11之基板處理裝置，其中，構成為，自上述電磁波供給部被照射的電磁波係照射至上述第2領域中之較自上述第2氣體供給部被供給氣體的區域更靠旋轉方向上游之區域。The substrate processing apparatus according to claim 11, wherein the electromagnetic wave system irradiated from the electromagnetic wave supply unit is irradiated to the second area more upstream in the rotation direction than the area where the gas is supplied from the second gas supply unit The area. 如請求項11之基板處理裝置，其中，構成為，自上述電磁波供給部被照射的電磁波係照射至上述第2領域中之較自上述第2氣體供給部被供給氣體的區域更靠旋轉方向下游之區域。The substrate processing apparatus according to claim 11, wherein the electromagnetic wave system irradiated from the electromagnetic wave supply unit is irradiated to the second area further downstream in the rotation direction than the area where the gas is supplied from the second gas supply unit的区。 The area. 如請求項10之基板處理裝置，其中，構成為，上述基板載置部從中心部至端部朝下方傾斜。The substrate processing apparatus according to claim 10, wherein the substrate mounting portion is inclined downward from the center portion to the end portion. 如請求項14之基板處理裝置，其中，構成為，自上述電磁波供給部被照射的電磁波係照射至上述第2領域中之較自上述第2氣體供給部被供給氣體的區域更靠旋轉方向上游之區域。The substrate processing apparatus according to claim 14, wherein the electromagnetic wave system irradiated from the electromagnetic wave supply unit is irradiated to the second area more upstream in the rotation direction than the area where the gas is supplied from the second gas supply unit The area. 如請求項14之基板處理裝置，其中，構成為，自上述電磁波供給部被照射的電磁波係照射至上述第2領域中之較自上述第2氣體供給部被供給氣體的區域更靠旋轉方向下游之區域。The substrate processing apparatus according to claim 14, wherein the electromagnetic wave system irradiated from the electromagnetic wave supply unit is irradiated to the second area further downstream in the rotation direction than the area to which the gas is supplied from the second gas supply unit的区。 The area. 如請求項10之基板處理裝置，其中，構成為，自上述電磁波供給部被照射的電磁波係照射至上述第2領域中之較自上述第2氣體供給部被供給氣體的區域更靠旋轉方向上游之區域。The substrate processing apparatus according to claim 10, wherein the electromagnetic wave system irradiated from the electromagnetic wave supply unit is irradiated to the second area more upstream in the rotation direction than the area where the gas is supplied from the second gas supply unit的区。 The area. 如請求項10之基板處理裝置，其中，構成為，自上述電磁波供給部被照射的電磁波係照射至上述第2領域中之較自上述第2氣體供給部被供給氣體的區域更靠旋轉方向下游之區域。The substrate processing apparatus according to claim 10, wherein the electromagnetic wave system irradiated from the electromagnetic wave supply unit is irradiated to the second area further downstream in the rotation direction than the area where the gas is supplied from the second gas supply unit的区。 The area. 一種半導體裝置之製造方法，其具有如下步驟： 將具有構成複數個槽的支柱的基板，載置在被備置在處理室內且具有基板載置面的基板載置部的步驟；及 不對上述槽之中進行處理，而以處理上述基板之表面之方式自上述基板之側向供給電磁波，將處理氣體供給至上述處理室，而自上述處理室將環境氣體排氣的步驟。A method of manufacturing a semiconductor device, which has the following steps: A step of placing a substrate having a support column constituting a plurality of grooves on a substrate placing portion provided in the processing chamber and having a substrate placing surface; and The step of supplying electromagnetic waves from the side of the substrate to process the surface of the substrate, supplying processing gas to the processing chamber, and exhausting the ambient gas from the processing chamber without processing the surface of the substrate. 一種程式，其係藉由電腦執行如下程序者： 將具有構成複數個槽的支柱的基板，載置在被備置在處理室內且具有基板載置面的基板載置部的程序；及 不對上述槽之中進行處理，而以處理上述基板之表面之方式自上述基板之側向供給電磁波，將處理氣體供給至上述處理室，而自上述處理室將環境氣體排氣的程序。A program that is executed by a computer: A procedure for placing a substrate having pillars constituting a plurality of grooves on a substrate placing portion provided in a processing chamber and having a substrate placing surface; and A process in which electromagnetic waves are supplied from the side of the substrate, processing gas is supplied to the processing chamber, and ambient gas is exhausted from the processing chamber by processing the surface of the substrate without processing in the tank.
TW108132931A 2019-07-03 2019-09-12 Substrate processing device, manufacturing method and program of semiconductor device capable of selectively processing substrate having troughs TW202103247A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019124406A JP2021009980A (en) 2019-07-03 2019-07-03 Substrate processing apparatus, manufacturing method of semiconductor device, and program
JP2019-124406 2019-07-03

Publications (1)

Publication Number Publication Date
TW202103247A true TW202103247A (en) 2021-01-16

Family

ID=73919326

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108132931A TW202103247A (en) 2019-07-03 2019-09-12 Substrate processing device, manufacturing method and program of semiconductor device capable of selectively processing substrate having troughs

Country Status (4)

Country Link
JP (1) JP2021009980A (en)
KR (1) KR102218892B1 (en)
CN (1) CN112176322B (en)
TW (1) TW202103247A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7030858B2 (en) * 2020-01-06 2022-03-07 株式会社Kokusai Electric Semiconductor device manufacturing methods, substrate processing devices and programs

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH086186B2 (en) * 1990-02-09 1996-01-24 三菱電機株式会社 Substrate processing apparatus and processing method thereof
JP3757159B2 (en) * 2001-11-28 2006-03-22 株式会社日立製作所 Plasma processing equipment
JP5214774B2 (en) * 2010-11-19 2013-06-19 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
JP2013073947A (en) * 2011-09-26 2013-04-22 Hitachi Kokusai Electric Inc Substrate processing apparatus
US20130284093A1 (en) * 2012-04-30 2013-10-31 Semes Co., Ltd. Substrate treating apparatus
JP6257071B2 (en) * 2012-09-12 2018-01-10 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
JP6081842B2 (en) * 2013-03-28 2017-02-15 ブラザー工業株式会社 Deposition equipment
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
US9947576B2 (en) * 2015-07-13 2018-04-17 Applied Materials, Inc. UV-assisted material injection into porous films
JP6454425B2 (en) * 2015-09-28 2019-01-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, substrate processing apparatus, and program
JP6623077B2 (en) * 2016-02-19 2019-12-18 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
KR102282631B1 (en) * 2016-08-31 2021-07-28 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing apparatus, semiconductor device manufacturing method and program
JP6663400B2 (en) * 2017-09-11 2020-03-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, substrate processing apparatus, and program
US10453729B2 (en) * 2017-09-13 2019-10-22 Toshiba Memory Corporation Substrate treatment apparatus and substrate treatment method

Also Published As

Publication number Publication date
JP2021009980A (en) 2021-01-28
KR20210004768A (en) 2021-01-13
CN112176322A (en) 2021-01-05
CN112176322B (en) 2022-07-15
KR102218892B1 (en) 2021-02-23

Similar Documents

Publication Publication Date Title
TWI588287B (en) Method of depositing a film and film deposition apparatus
TWI609455B (en) Tungsten feature fill with nucleation inhibition
JP6062413B2 (en) Substrate processing apparatus, semiconductor device manufacturing method, and program
WO2006049199A1 (en) Insulating film forming method and substrate processing method
JP2008202930A (en) Vacuum drier
JP2014017296A (en) Deposition method
JP2012216632A (en) Plasma processing method and element isolation method
TW202103247A (en) Substrate processing device, manufacturing method and program of semiconductor device capable of selectively processing substrate having troughs
TWI839568B (en) Substrate processing device, semiconductor device manufacturing method and program
JP4342974B2 (en) Curing apparatus and method, and coating film forming apparatus
CN114402416A (en) Oxidation profile tuning for substrate processing
CN113078060B (en) Method for manufacturing semiconductor device, substrate processing apparatus, and storage medium
CN110911261B (en) Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
JP2004134769A (en) Method of removing photoresist
JP4817822B2 (en) Substrate peripheral film removing apparatus and substrate peripheral film removing method
JP6096588B2 (en) Substrate processing apparatus and substrate processing method
TWI782307B (en) Substrate processing apparatus, manufacturing method of semiconductor device, and manufacturing program of semiconductor device
JP2009010144A (en) Substrate treating apparatus
CN111095490B (en) Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium
US20070141843A1 (en) Substrate peripheral film-removing apparatus and substrate peripheral film-removing method
JP3025454B2 (en) Resist ashing device
US20220389581A1 (en) Substrate processing apparatus and substrate processing method
JP4977636B2 (en) Substrate processing apparatus and semiconductor device manufacturing method
JP2022053930A (en) Method for manufacturing semiconductor device, substrate processing apparatus, and program
JP3808710B2 (en) Substrate processing equipment