JP4817822B2 - Substrate peripheral film removing apparatus and substrate peripheral film removing method - Google Patents

Description

  The present invention relates to a substrate peripheral portion film removing apparatus and a substrate peripheral portion film removing method, and more particularly to a substrate peripheral portion film removing apparatus that removes a film on a substrate peripheral portion without using plasma.

A semiconductor device is manufactured by forming a gate electrode, an insulating film, a wiring layer, etc. on a silicon wafer (hereinafter simply referred to as “wafer”). A film formation process or an etching process is used to form the gate electrode, the insulating film, and the wiring layer. In particular, when a contact hole is formed by removing the SiO ₂ film on the source / drain portion provided on the gate electrode or the wafer, for example, RIE (Reactive Ion Etching) is preferably used.

In general, a semiconductor device is not manufactured from the peripheral portion of the wafer (hereinafter referred to as “bevel portion”). The SiO ₂ film in the bevel portion is removed by etching together with the SiO ₂ film on the gate electrode when the contact hole is formed. Therefore, a large amount of SiO ₂ film exists on the bevel portion while the SiO ₂ film on the gate electrode is removed by etching. Since the bevel portion of the SiO ₂ film is not covered with the resist film, it is directly exposed to the plasma and charged by the electrons in the plasma. At this time, the traveling direction of the ions for etching the SiO ₂ film on the gate electrode bends due to the influence of the charge of the SiO ₂ film in the charged bevel portion, so that the contact hole is not formed perpendicular to the wafer surface. was there.

Therefore, a method for removing the SiO ₂ film on the bevel portion of the wafer by etching has been developed in advance (see, for example, Patent Document 1). As an etching method at this time, RIE or sputtering by radicals is used.
JP-A-10-256163

However, in order to use sputtering by RIE or radical, it is necessary to generate plasma in the vicinity of the wafer, which causes a problem that the structure of the film removing apparatus for removing the SiO ₂ film in the bevel portion becomes complicated.

  An object of the present invention is to provide a substrate peripheral portion film removing apparatus and a substrate peripheral portion film removing method capable of removing a film on the peripheral portion of the substrate without complicating the structure of the apparatus.

In order to achieve the above object, a substrate peripheral portion film removing apparatus according to claim 1 encloses a storage chamber for storing a substrate having an oxide film formed on the peripheral portion and the same place in the peripheral portion of the substrate. A first isolation chamber and a second isolation chamber that isolate the same place from the atmosphere of the storage chamber; and the substrate is placed in the storage chamber and in a plane parallel to the surface of the substrate A mounting table for rotating the substrate, wherein the first isolation chamber and the second isolation chamber surround the same place when the substrate mounted on the mounting table rotates. And the first isolation chamber generates a product at the same location by causing a chemical reaction between the oxide film formed at the same location and a gas molecule of the processing gas, and the second isolation chamber. The chamber vaporizes and thermally oxidizes the generated product. And removing from the same location Te.

The substrate peripheral portion film removing apparatus according to claim 2 is the substrate peripheral portion film removing apparatus according to claim 1, wherein side surfaces of the first isolation chamber and the second isolation chamber are formed as ridges from the side surfaces. A projecting opening made of two plate-like bodies parallel to each other and projecting toward the substrate is provided, and the projecting opening accommodates the substrate between the two plate-like bodies. A clearance with the plate-like body is 0.5 mm or less .

The substrate peripheral portion film removing apparatus according to claim 3 is the substrate peripheral portion film removing apparatus according to claim 1 or 2, wherein the accommodating chamber is filled with an inert gas, and the pressure in the accommodating chamber is the first pressure. The pressure in the isolation chamber is higher than the pressure in the second isolation chamber .

5. The substrate peripheral portion film removing apparatus according to claim 4, wherein the mounting table has a cooling mechanism for cooling the substrate. And

The substrate peripheral portion film removing apparatus according to claim 5 is the substrate peripheral portion film removing apparatus according to any one of claims 1 to 4, wherein the first isolation chamber and the second isolation chamber are respectively provided on side surfaces. An opening is provided at a position corresponding to the peripheral edge of the rotating substrate .

請 Motomeko substrate peripheral film removal device according 6, the substrate peripheral film removal device according to any one of claims 1 to 5, wherein the substrate is characterized as exhibiting a disc-shaped.

請 Motomeko 7 substrate peripheral film removal apparatus described, the substrate peripheral film removal device according to any one of claims 1 to 6, a heating device disposed outside of said second isolated chamber Further, the second isolation chamber has a transmission window formed in a wall, and energy from the heating device transmits the transmission window to heat the same place, and generates the generated product. It is characterized by being removed from the same place by vaporization and thermal oxidation .

Substrate peripheral film removal device according to claim 8, wherein, in the substrate peripheral film removal device according to any one of claims 1 to 7, wherein the heating device emits a laser beam transmitted through the transmission window It is a laser beam irradiation apparatus .

In order to achieve the above object, a method for removing a substrate peripheral portion film according to claim 9 includes: a storage chamber for storing a substrate having an oxide film formed on the peripheral portion; and a same place in the peripheral portion of the substrate. A first isolation chamber and a second isolation chamber which can be enclosed and isolate the same place from the atmosphere of the storage chamber; and in a plane parallel to the surface of the substrate on which the substrate is placed in the storage chamber And the first isolation chamber and the second isolation chamber surround the same place when the substrate placed on the placement table rotates. A method for removing a substrate peripheral edge film in a substrate peripheral edge film removing apparatus arranged along a peripheral edge, wherein the mounting table surrounds the same place with the first isolation chamber and the second isolation chamber. A rotating step for continuously rotating the substrate; and A product generating step of generating a product in the same place by chemically reacting an oxide film formed in the same place with a gas molecule of a processing gas; and the second isolation chamber is generated. And a product removal step of vaporizing and thermally oxidizing the product to remove it from the same place .

Method of removing the substrate peripheral film of 請 Motomeko 10 in that in the method of removing the substrate peripheral film of claim 9, wherein the pressure and the second isolation chamber pressure in the accommodating chamber of the first isolation chamber The containment chamber is filled with an inert gas so as to be higher than the pressure .
The substrate peripheral portion film removing method according to an eleventh aspect is the substrate peripheral portion film removing method according to the ninth or tenth aspect, further comprising a cooling step in which the mounting table cools the substrate.
The substrate peripheral film removal method according to claim 12 is the substrate peripheral film removal method according to any one of claims 9 to 11, wherein the heating device is disposed outside the second isolation chamber. However, the energy which permeate | transmits the permeation | transmission window formed in the wall part of the said 2nd isolation chamber is supplied to the said same place, It heats, It is characterized by the above-mentioned.

According to the substrate peripheral portion film removing apparatus according to claim 1 and the substrate peripheral portion film removing method according to claim 9 , the oxide film and the processing gas formed at the same location in the peripheral portion of the substrate in the first isolation chamber. of gas molecules by a chemical reaction products in the same location is generated, since the products produced in the second isolation chamber by vaporization and thermal oxidation is removed from the same place, the oxide film on the peripheral edge of the substrate It is possible to eliminate the need for removal by sputtering using RIE or radicals, and the film on the peripheral edge of the substrate can be removed without complicating the structure of the apparatus. Further, by rotating the substrate, the same place on the peripheral edge of the substrate can be continuously processed by the first isolation chamber and the second isolation chamber, thereby improving the efficiency of removing the oxide film. it can.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, the substrate peripheral portion film removal apparatus according to the first embodiment of the present invention will be described.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a wafer bevel part oxide film removing apparatus as a substrate peripheral part film removing apparatus according to the present embodiment, and FIG. 2 is a cross-sectional view taken along line II in FIG. is there.

1 and 2, a wafer bevel oxide film removing apparatus 10 contains a wafer chamber 11 (accommodating chamber) that accommodates the wafer W and isolates it from the outside, and is placed in the wafer chamber 11 to place the wafer W thereon. A wafer stage 12 as a mounting table, and a bevel chamber 13 (chemical processing apparatus, film) that accommodates a part of the bevel portion of the wafer W mounted on the wafer stage 12 and isolates it from the atmosphere in the wafer chamber 11. Removal chamber). Here, an oxide film as an insulating layer in the semiconductor device, for example, an SiO ₂ film is formed on the bevel portion of the wafer W.

  The wafer chamber 11 has a wafer loading / unloading port 14 on its side wall, and the wafer loading / unloading port 14 is opened and closed by a gate valve 15. The wafer stage 12 supports a wafer mounting plate 16 extending downward from the center of the wafer mounting plate 16 and a disk-shaped wafer mounting plate 16 disposed substantially horizontally with the bottom surface of the wafer chamber 11. And a mounting plate support shaft 17. Since the mounting plate support shaft 17 is rotationally driven around its central axis by a motor (not shown) or the like, the wafer stage 12 rotates about the mounting plate support shaft 17. Thereby, the wafer stage 12 rotates the wafer W in a plane parallel to the surface of the wafer W to be placed. Further, the wafer mounting plate 16 incorporates a cooling mechanism (not shown), for example, a refrigerant circulation path or a Peltier element, and controls the temperature of the mounted wafer W.

  The bevel chamber 13 includes a rectangular parallelepiped processing chamber 18 (isolation chamber, film removal chamber), a processing gas supply pipe 19 for supplying a processing gas to be described later into the processing chamber 18, a gas in the processing chamber 18, and the like. It has an exhaust pipe 20 that discharges, and a protruding opening 21 that opens toward the wafer W placed on the wafer stage 12 on the side surface of the processing chamber 18. The projecting opening 21 has two plate-like bodies that are parallel to each other and project toward the wafer W from the side surface of the processing chamber 18 as a ridge.

  The height of the protruding opening 21 is set so that the protruding opening 21 faces the wafer W placed on the wafer stage 12, and the bevel chamber 13 in the top view is shown in FIG. The bevel chamber 13 accommodates a portion of the bevel portion of the wafer W, and a portion of the bevel portion of the wafer W is disposed in the processing chamber via the projecting opening 21. 18 protrudes into. As a result, the processing chamber 18 isolates a part of the bevel portion of the wafer W from the atmosphere of the wafer chamber 11.

  The wafer bevel oxide film removal apparatus 10 includes a laser beam irradiation device 22 (heating device) disposed outside the wafer chamber 11. The laser light emitted from the laser light irradiation device 22 passes through the transmission window 23 arranged on the side wall of the wafer chamber 11 and the transmission window 24 arranged on the side wall of the processing chamber 18 and is accommodated in the processing chamber 18. It reaches the bevel portion of the wafer W. Thereby, the laser beam irradiation apparatus 22 heats the bevel portion of the wafer W.

The processing gas supply pipe 19 is connected to a processing gas supply device (not shown) via an MFC (Mass Flow Controller) (not shown). The processing gas supply device and the MFC are connected to the processing chamber 18 with an active gas such as fluorination. Hydrogen gas (HF), hydrochloric acid gas (HCl), fluorine gas (F ₂ ), chlorine gas (Cl ₂ ), ammonia gas (NH ₃ ), or a mixed gas thereof is supplied at a predetermined flow rate. The HF gas or the like supplied into the processing chamber 18 removes the beveled SiO ₂ film by a chemical reaction. At this time, since the bevel portion of the wafer W is irradiated with laser light, the temperature of the bevel portion rises and the removal of the SiO ₂ film on the bevel portion by chemical reaction is promoted.

As described above, the bevel portion chamber 13 only accommodates a part of the bevel portion of the wafer W. However, since the wafer W rotates in a plane parallel to the surface, the bevel portion chamber 13 extends over the entire circumference of the bevel portion of the wafer W. Thus, it is possible to reliably remove the SiO ₂ film. Further, the protrusion amount L of the wafer W into the processing chamber 18 is set to 2 mm or less. Usually, the semiconductor device is not formed in the range of 2 mm inside from the peripheral edge of the wafer. Therefore, it is possible to prevent the semiconductor device on the wafer W from being damaged by the active gas when the SiO ₂ film on the bevel portion of the wafer W is removed.

Further, the clearance (t) between the wafer W and the plate-like body of the protruding opening 21 is 0.5 mm or less, and the wafer chamber 11 is filled with an inert gas, for example, a rare gas. Is set higher than the pressure in the processing chamber 18. Thereby, it is possible to prevent the processing gas in the processing chamber 18 from diffusing into the wafer chamber 11, thereby reliably preventing the SiO ₂ film formed on the portion other than the bevel portion of the wafer W from being altered or removed. Can do.

When the SiO ₂ film on the bevel portion is removed, the bevel portion is heated. At this time, the cooling mechanism built in the wafer mounting plate 16 of the wafer stage 12 cools the wafer W. The device can be prevented from being destroyed by heat.

  Next, the oxide film removal process of the bevel part of the wafer W using the wafer bevel part oxide film removal apparatus 10 is demonstrated.

  FIG. 3 is a flowchart of wafer bevel oxide film removal processing using the wafer bevel oxide film removal apparatus of FIG.

In FIG. 3, first, the wafer W is loaded into the wafer chamber 11 by a transfer arm (not shown) and placed on the wafer stage 12, and a part of the bevel portion of the wafer W is processed in the bevel portion chamber 13. It accommodates in the chamber 18 (step S31). At this time, as shown in FIG. 4A, the gate electrode 40 and the source / drain portion 41 are formed on the wafer W to be carried in, and the SiO ₂ film 42 is formed on the wafer W so as to cover the entire surface of the wafer W. It is laminated on W. Further, a resist film 43 formed in a predetermined pattern by lithography or the like is laminated on the SiO ₂ film 42. Here, the resist film 43 because they are not stacked on the SiO ₂ film 42 of the bevel portion, the SiO ₂ film 42 of the bevel portion is exposed.

Next, the mounting plate support shaft 17 of the wafer stage 12 is rotationally driven by a motor or the like to rotate the wafer stage 12 (step S32), and the processing gas supply device and the MFC supply the above-described active gas to the processing chamber 18 at a predetermined flow rate. (Step S33). Further, the laser beam irradiation device 22 starts irradiating the bevel portion accommodated in the processing chamber 18 with the laser beam and heats the bevel portion (step S34). Thereby, the SiO ₂ film 42 in the bevel portion is removed by a chemical reaction.

Next, as shown in FIG. 4B, when all the SiO ₂ film of the bevel portion of the wafer W is removed, the wafer stage 12 stops rotating, the processing gas supply device stops supplying the active gas, The laser beam irradiation device 22 stops the laser beam irradiation. Thereafter, the transfer arm carries the wafer W out of the wafer chamber 11 (step S35), and this process is terminated.

Thereafter, the wafer W is carried into an etching processing apparatus (not shown), and the SiO ₂ film 42 on the gate electrode 40 and the source / drain portion 41 is removed by RIE or the like, whereby contact holes 44 and 45 are formed. Further, the wafer W is carried into an ashing processing apparatus, and the resist film 43 is removed by ashing (see FIG. 4C).

According to the wafer bevel part oxide film removing apparatus 10 and the bevel part oxide film removing process of FIG. 3, the wafer W in which the SiO ₂ film 42 is formed on the bevel part of the wafer W is accommodated in the wafer chamber 11, and the bevel part SiO _2. The film 42 is removed by a chemical reaction using an active gas. Accordingly, it is possible to eliminate the need to remove the SiO ₂ film 42 in the bevel portion by sputtering using RIE or radicals, and therefore, to remove the SiO ₂ film 42 in the bevel portion without complicating the structure of the oxide film removing apparatus. Can do. In addition, a part of the bevel portion is accommodated in the processing chamber 18 of the bevel portion chamber 13 and is isolated from the atmosphere in the wafer chamber 11, and the active gas is supplied into the processing chamber 18, and the bevel portion accommodated in the processing chamber 18. Therefore, the removal of the SiO ₂ film 42 in the bevel portion can be promoted without altering and removing the SiO ₂ film 42 formed on the portion other than the bevel portion.

In the wafer bevel part oxide film removing apparatus 10, the active gas is hydrogen fluoride gas, hydrochloric acid gas, fluorine gas, chlorine gas, ammonia gas, or a mixed gas thereof. These gases are readily available. The SiO ₂ film can be easily removed with hydrogen fluoride gas, hydrochloric acid gas, fluorine gas, chlorine gas or ammonia gas. Therefore, the SiO ₂ film 42 in the bevel portion can be easily removed.

  In the wafer bevel part oxide film removing apparatus 10 described above, the laser beam irradiation device 22 heated the bevel part of the wafer W, but the apparatus for heating the bevel part is not limited to this, and a UV heater or the like disposed in the processing chamber 18 A halogen lamp or the like may be used.

  Next, a substrate peripheral film removing apparatus according to a second embodiment of the present invention will be described.

This embodiment is basically the same in configuration and operation as the first embodiment described above, and uses COR processing and PHT processing, which will be described later, for removing the SiO ₂ film 42 on the bevel portion of the wafer W. The second embodiment differs from the first embodiment in that it has two bevel chambers for performing COR processing and PHT processing. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

The COR process is a process of generating a product by chemically reacting an oxide film (for example, a SiO ₂ film laminated on the wafer) and gas molecules, and the PHT process is for heating the wafer subjected to the COR process. In this process, the product generated on the wafer by the chemical reaction of the COR process is removed from the wafer by vaporization and thermal oxidation. As described above, the COR process and the PHT process, in particular, the COR process is a process for removing the oxide film of the wafer without using plasma and without using a water component. Therefore, the plasmaless etching process and the dry cleaning process (drying process) are performed. Corresponds to cleaning process.

In the substrate peripheral portion film removing apparatus according to the present embodiment, radicalized ammonia gas and hydrogen fluoride gas are used as the processing gas. Here, the hydrogen fluoride gas promotes the corrosion of the SiO ₂ film, and the ammonia gas restricts the reaction between the SiO ₂ film and the hydrogen fluoride gas as necessary, and finally stops the reaction. Synthesize the product (By-product). Specifically, the following chemical reaction is used in the COR process and the PHT process.
(COR processing)
SiO ₂ + 4HF → SiF ₄ + 2H ₂ O ↑
SiF ₄ + 2NH ₃ + 2HF → (NH ₄ ) ₂ SiF ₆
(PHT treatment)
(NH ₄ ) ₂ SiF ₆ → SiF ₄ ↑ + 2NH ₃ ↑ + 2HF ↑
In the COR process using the above-described chemical reaction, it is known that the amount of product produced is saturated after a predetermined time has elapsed. Specifically, after a predetermined time has elapsed, the amount of product produced does not increase even if the SiO ₂ film is continuously exposed to a mixed gas of ammonia gas and hydrogen fluoride gas thereafter. The amount of product produced is determined by the pressure of ammonia gas and hydrogen fluoride gas, the volume flow rate ratio, and the like. Therefore, it is possible to easily control the removal amount of the SiO ₂ film, thereby avoiding damage to the silicon of the wafer.

  FIG. 5 is a cross-sectional view showing a schematic configuration of a wafer bevel part oxide film removing apparatus as a substrate peripheral part film removing apparatus according to the present embodiment, and FIG. 6 is a cross-sectional view taken along line II-II in FIG. is there.

  5 and 6, the wafer bevel part oxide film removing apparatus 50 accommodates a wafer chamber 59 (accommodating chamber), a wafer stage 12, and a part of the bevel part of the wafer W placed on the wafer stage 12. And two bevel chambers 51 and 52 (chemical processing apparatuses) that are isolated from the atmosphere in the wafer chamber 59. The wafer chamber 59 has a wafer carry-in / out port 53 on its side wall, and the wafer carry-in / out port 53 is opened and closed by a gate valve 54.

  The bevel chamber 51 includes a rectangular parallelepiped processing chamber 55 (isolation chamber), a processing gas supply pipe 56 that supplies radicalized ammonia gas and hydrogen fluoride gas into the processing chamber 55, It has an exhaust pipe 57 that discharges gas and the like, and a projecting opening 58 that projects from the side surface of the processing chamber 55 toward the wafer W placed on the wafer stage 12. The protruding opening 58 has a ridge similar to that of the protruding opening 21.

  The bevel chamber 52 is placed on the wafer stage 12 from a rectangular parallelepiped processing chamber 60 (film removal chamber), an exhaust pipe 61 that discharges gas in the processing chamber 60, and the side surface of the processing chamber 60. And a projecting opening 62 projecting and opening toward the wafer W. The protruding opening 62 also has a ridge similar to that of the protruding opening 21.

  The wafer bevel oxide film removing apparatus 50 includes a laser beam irradiation device 63 (heating device) disposed outside the wafer chamber 59. The laser light emitted from the laser light irradiation device 63 passes through the transmission window 64 disposed on the side wall of the wafer chamber 59 and the transmission window 65 disposed on the side wall of the processing chamber 60 and is accommodated in the processing chamber 55. It reaches the bevel portion of the wafer W. Thereby, the laser beam irradiation device 63 heats the bevel portion of the wafer W.

  The heights of the projecting openings 58 and 62 are set so that the projecting openings 58 and 62 face the wafer W placed on the wafer stage 12, and as shown in FIG. 52 are arranged so as to overlap with a part of the bevel part of the wafer W, respectively, the bevel part chambers 51 and 52 each accommodate a part of the bevel part of the wafer W and a part of the bevel part of the wafer W. Protrudes into the processing chamber 55 or the processing chamber 60 through the protruding openings 58 and 62. Thereby, the processing chamber 55 and the processing chamber 60 respectively isolate a part of the bevel portion of the wafer W from the atmosphere of the wafer chamber 59.

The processing gas supply pipe 56 of the bevel chamber 51 is connected to a processing gas supply device via an MFC (not shown). The processing gas supply device and the MFC are ammonia gas and hydrogen fluoride gas radicalized in the processing chamber 55. At a predetermined flow rate. The COR process is performed on the SiO ₂ film 42 in the bevel portion by the radicalized ammonia gas and hydrogen fluoride gas supplied to the processing chamber 55. At this time, a product is generated from the SiO ₂ film, ammonia gas, and hydrogen fluoride gas.

The processing chamber of the bevel chamber 52 accommodates a bevel having a product generated by the COR process, and the laser beam irradiation device 63 heats the bevel of the wafer W (PHT process). At this time, the product of the bevel portion is vaporized and thermally oxidized and removed from the wafer. Thereby, the SiO ₂ film in the bevel portion is removed.

As described above, each of the bevel chambers 51 and 52 only accommodates a part of the bevel portion of the wafer W. However, since the wafer W rotates in a plane parallel to the surface thereof, the entire bevel portion of the wafer W is rotated. It is possible to reliably remove the SiO ₂ film over the circumference. Similarly to the wafer bevel oxide film removing apparatus 10 described above, the protrusion amount L of the wafer W into the processing chambers 55 and 60 is set to 2 mm or less, and the clearance between the wafer W and the inner surfaces of the protrusion openings 58 and 62 is set. (T) is 0.5 mm or less, and the wafer chamber 59 is filled with an inert gas, for example, a rare gas, so that the pressure in the wafer chamber 59 is set higher than the pressure in the processing chambers 55 and 60. .

  During the vaporization and thermal oxidation of the product of the bevel portion, the bevel portion is heated. At this time, the cooling mechanism built in the wafer mounting plate 16 of the wafer stage 12 cools the wafer W. It is possible to prevent the semiconductor device from being destroyed by heat.

According to the wafer bevel part oxide film removing apparatus 50, the wafer W in which the SiO ₂ film 42 is formed on the bevel part of the wafer W is accommodated in the wafer chamber 59, and the SiO ₂ film 42 in the bevel part is removed by COR processing and PHT processing. Is done. Accordingly, it is possible to eliminate the need to remove the SiO ₂ film 42 in the bevel portion by sputtering using RIE or radicals, and therefore, to remove the SiO ₂ film 42 in the bevel portion without complicating the structure of the oxide film removing apparatus. Can do.

A part of the bevel portion is accommodated in the processing chamber 55 of the bevel chamber 51 and is isolated from the atmosphere in the wafer chamber 59, and radicalized ammonia gas and hydrogen fluoride gas are supplied into the processing chamber 55. The bevel portion is subjected to COR processing, the bevel portion having a product generated from the SiO ₂ film 42 by the COR processing is accommodated in the processing chamber 60 of the bevel portion chamber 52, and the accommodated bevel portion is heated. The product is vaporized and thermally oxidized by being subjected to PHT treatment. Therefore, without alteration or removal of the SiO ₂ film 42 formed on the non-beveled portion, it can be removed SiO ₂ film 42 of the bevel portion.

In the wafer bevel part oxide film removing apparatus according to each of the above-described embodiments, the oxide film (SiO ₂ film) formed on the bevel part of the wafer W is removed, but the removed film is not limited to the oxide film, The insulating film charged by, for example, may be removed. Further, the deposit adhered on the wafer W may be removed by the above-described wafer bevel part oxide film removing apparatus.

It is sectional drawing which shows schematic structure of the wafer bevel part oxide film removal apparatus as a substrate peripheral part film removal apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which follows the line II in FIG. It is a flowchart of the bevel part oxide film removal process of a wafer using the wafer bevel part oxide film removal apparatus of FIG. FIGS. 4A and 4B are process diagrams showing a process in which the SiO ₂ film on the bevel part of the wafer is removed by the process of FIG. 3, wherein FIG. 3A shows the bevel part of the wafer before the SiO ₂ film is removed, and FIG. The bevel portion of the wafer after the _two films are removed is shown, and (C) shows the wafer after the contact holes are formed and the resist film is removed. It is sectional drawing which shows schematic structure of the wafer bevel part oxide film removal apparatus as a substrate peripheral part film removal apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which follows the line II-II in FIG.

Explanation of symbols

W Wafer 10, 50 Wafer bevel portion oxide film removal device 11, 59 Wafer chamber 12 Wafer stage 13, 51, 52 Bevel portion chamber 18, 55, 60 Processing chamber 19, 56 Processing gas supply tube 22, 63 Laser light irradiation device

Claims (12)

A storage chamber for storing a substrate having an oxide film formed on the peripheral edge ;
A first isolation chamber and a second isolation chamber, each of which can enclose the same location on the periphery of the substrate, and isolates the same location from the atmosphere of the storage chamber;
A mounting table for mounting the substrate in the housing chamber and rotating the substrate in a plane parallel to the surface of the substrate;
The first isolation chamber and the second isolation chamber are arranged along a peripheral edge of the substrate so as to surround the same place when the substrate placed on the mounting table rotates,
The first isolation chamber generates a product in the same place by chemically reacting an oxide film formed in the same place with a gas molecule of a processing gas,
The apparatus for removing a peripheral edge film of a substrate, wherein the second isolation chamber vaporizes and thermally oxidizes the generated product and removes it from the same location . The side surfaces of the first isolation chamber and the second isolation chamber are provided with projecting openings made of two plate-like bodies that are parallel to each other and project toward the substrate as a ridge from the side surface,
The protruding opening accommodates the substrate between the two plate-like bodies,
The substrate peripheral portion film removing apparatus according to claim 1, wherein a clearance between the substrate and each plate-like body is 0.5 mm or less . The substrate according to claim 1 or 2 , wherein the accommodation chamber is filled with an inert gas, and the pressure in the accommodation chamber is higher than the pressure in the first isolation chamber and the pressure in the second isolation chamber. Perimeter film removal device. The substrate peripheral portion film removing apparatus according to claim 1, wherein the mounting table includes a cooling mechanism that cools the substrate. The said 1st isolation chamber and the 2nd isolation chamber have an opening part in the position corresponding to the peripheral part of the said board | substrate to rotate on a side surface, respectively . Substrate peripheral portion film removal apparatus. 6. The substrate peripheral portion film removing apparatus according to claim 1, wherein the substrate has a disk shape . Further comprising a heating device disposed outside the second isolation chamber;
The second isolation chamber has a transmission window formed in a wall portion, and energy from the heating device transmits the transmission window to heat the same place, and vaporizes / heats the generated product. The apparatus for removing a peripheral film of a substrate according to claim 1, wherein the film is oxidized and removed from the same place . 8. The substrate peripheral portion film removing apparatus according to claim 1, wherein the heating device is a laser beam irradiation device that irradiates a laser beam transmitted through the transmission window . 9. A storage chamber for storing a substrate having an oxide film formed on the peripheral edge thereof, and a first isolation chamber that can surround the same location on the peripheral edge of the substrate and isolates the same location from the atmosphere of the storage chamber And a second isolation chamber, and a mounting table for mounting the substrate in the storage chamber and rotating the substrate in a plane parallel to the surface of the substrate, the first isolation chamber and the second isolation chamber An isolation chamber is a substrate peripheral film removal method in a substrate peripheral film removal apparatus arranged along the peripheral edge of the substrate so as to surround the same place when the substrate mounted on the mounting table rotates. Because
A rotating step for continuously rotating the substrate so that the first isolation chamber and the second isolation chamber surround the same place;
A product generation step in which the first isolation chamber chemically reacts an oxide film formed at the same location with gas molecules of a processing gas to generate a product at the same location;
Method for removing the second isolation chamber base plate peripheral film you characterized as having to take the product removal step of removing from the same place by vaporization and thermal oxidizing the product produced. The housing such that the pressure in the chamber is higher than the first isolation pressure and the second pressure isolation room in the room, the the receiving chamber according to claim 9, wherein the inert gas is filled Of removing the peripheral film of the substrate. The method according to claim 9 or 10, wherein the mounting table further includes a cooling step of cooling the substrate. A heating device disposed outside the second isolation chamber supplies and heats energy transmitted through a transmission window formed in a wall portion of the second isolation chamber to the same location. The method for removing a peripheral film of a substrate according to any one of claims 9 to 11.

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