CN112176322B - Substrate processing apparatus, method for manufacturing semiconductor device, and program - Google Patents

Substrate processing apparatus, method for manufacturing semiconductor device, and program Download PDF

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Publication number
CN112176322B
CN112176322B CN201910871855.4A CN201910871855A CN112176322B CN 112176322 B CN112176322 B CN 112176322B CN 201910871855 A CN201910871855 A CN 201910871855A CN 112176322 B CN112176322 B CN 112176322B
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gas
substrate
supply unit
region
electromagnetic wave
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CN112176322A (en
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油谷幸则
广濑义朗
大桥直史
高崎唯史
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The invention provides a substrate processing apparatus capable of selectively processing a substrate having a groove. The substrate processing apparatus includes: a substrate mounting section provided in the processing chamber and having a substrate mounting surface on which a substrate having a plurality of grooves is mounted; a gas supply unit configured to supply a process gas to the process chamber; an exhaust unit configured to exhaust ambient gas from the processing chamber; and an electromagnetic wave supply unit configured to supply an electromagnetic wave from a side of the substrate to treat a surface of the groove.

Description

Substrate processing apparatus, method for manufacturing semiconductor device, and program
Technical Field
The invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a program.
Background
In the process of manufacturing a semiconductor device, with the recent trend toward miniaturization, a groove having a large aspect ratio is formed on a substrate, and various processes are performed on the groove and the surrounding structure. As a method for treating the periphery of the tank, for example, there is a technique described in patent document 1.
Disclosure of Invention
Problems to be solved by the invention
The width is, for example, 10 to 20nm in length. In general, it is conceivable to use photolithography technique for forming a groove in a substrate, but in the case of such a width, it is difficult to form a highly precise mask because of a large influence of alignment error, and thus it is difficult to form a groove at a precise position.
For this reason, it is conceivable to form a protective film on the surface of the substrate so as to avoid etching at a place other than the desired position. However, since the gas is uniformly supplied to the substrate surface when the protective film is formed, the protective film is formed not only on the substrate surface but also in the groove. In this case, since an undesirable component remains in the trench, the semiconductor device does not satisfy desired performance.
In view of the above, the present invention aims to: provided is a technique capable of selectively processing a substrate having a groove.
Patent document 1: japanese unexamined patent publication 2014-75579
Means for solving the problems
One embodiment for solving the above problem is a technique including: a substrate mounting section provided in the processing chamber and having a substrate mounting surface on which a substrate having a plurality of grooves is mounted; a gas supply unit configured to supply a process gas to the process chamber; an exhaust unit configured to exhaust ambient gas from the processing chamber; and an electromagnetic wave supply unit configured to supply an electromagnetic wave from a side of the substrate to treat a surface of the groove.
Effects of the invention
According to this technique, a technique capable of selectively processing a substrate having a groove can be provided.
Drawings
Fig. 1 is an explanatory view illustrating a substrate processing apparatus according to a first embodiment.
Fig. 2 is an explanatory view for explaining the gas supply unit.
Fig. 3 is an explanatory diagram illustrating a controller of the substrate processing apparatus.
Fig. 4 is an explanatory diagram illustrating a flow of substrate processing.
Fig. 5 is an explanatory diagram for explaining a state of the substrate.
Fig. 6 is an explanatory diagram for explaining a state of the substrate.
Fig. 7 is an explanatory view for explaining a substrate processing apparatus according to the second embodiment.
Fig. 8 is an explanatory view for explaining a substrate processing apparatus according to the second embodiment.
Fig. 9 is an explanatory diagram illustrating a flow of substrate processing.
Fig. 10 is an explanatory view for explaining a substrate processing apparatus according to the third embodiment.
Fig. 11 is an explanatory view for explaining a substrate processing apparatus according to the fourth embodiment.
Fig. 12 is an explanatory view for explaining a substrate processing apparatus according to the fifth embodiment.
Description of the reference numerals
100: a substrate;
101: a column;
102: a groove;
103: a surface;
200: a substrate processing apparatus;
201: a processing chamber;
240: a first gas supply part;
250: a second gas supply unit;
260: a purge gas supply unit;
280: an exhaust section;
292: an electromagnetic wave supply unit;
301: a processing chamber;
334: a first exhaust portion;
335: a second exhaust portion.
Detailed Description
(first embodiment)
An example of a substrate processing apparatus 200 for processing a substrate and a substrate processing method using the substrate processing apparatus 200 will be described with reference to fig. 1.
(substrate processing apparatus)
The substrate processing apparatus 200 includes a chamber 202. The chamber 202 is, for example, a flat closed container having a circular cross section. In the chamber 202, a processing space 205 for processing a substrate 100 such as a silicon wafer as a substrate and a transfer space 206 through which the substrate 100 passes when the substrate 100 is transferred to the processing space 205 are formed. The chamber 202 is composed of an upper container 202a and a lower container 202 b.
A substrate transfer inlet 148 adjacent to the gate valve 149 is provided on a side surface of the lower container 202b, and the substrate 100 is moved between the vacuum transfer chamber, not shown, and the substrate transfer inlet 148. A plurality of lift pins 207 are provided at the bottom of the lower container 202 b.
The processing chamber 201 constituting the processing space 205 is constituted by, for example, a substrate mounting table 212 and a shower head 230, which will be described later. A substrate support portion 210 for supporting the substrate 100 is provided in the processing space 205. The substrate support 210 mainly includes a substrate mounting surface 211 on which the substrate 100 is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on the surface thereof, and a heater 213 as a heat source built in the substrate mounting table 212.
Through holes 214 through which the lift pins 207 are inserted are provided in the substrate mounting table 212 at positions corresponding to the lift pins 207, respectively. The heater 213 is connected to a temperature control unit 220 that controls the temperature of the heater 213.
The substrate mounting table 212 is supported by a shaft 217. The support portion of the shaft 217 penetrates a hole provided in the bottom wall of the chamber 202, and is connected to the lifting/lowering rotating portion 218 outside the chamber 202 via the support plate 216. The substrate 100 placed on the substrate placing surface 211 can be raised and lowered by operating the lifting and lowering rotating unit 218 to raise and lower the shaft 217 and the substrate placing table 212. Further, the substrate mounting table 212 can be rotated by operating the elevation rotation unit 218. Further, the periphery of the lower end portion of the shaft 217 is covered with a bellows 219. The chamber 202 is kept airtight.
The vertically movable and rotatable portion 218 mainly includes a support shaft 218a for supporting the shaft 217 and an operating portion 218b for vertically moving or rotating the support shaft 218 a. The operating unit 218b includes, for example, an elevating unit 218c including a motor for elevating and lowering, and a rotating mechanism 218d such as a gear for rotating the support shaft 218 a. They are coated with grease or the like to make them flexible in their movements.
The substrate mounting table 212 is lowered to a position where the substrate mounting surface 211 faces the substrate carrying-out inlet 148 when the substrate 100 is carried, and is raised to a processing position where the substrate 100 is in the processing space 205 when the substrate 100 is processed, as shown in fig. 1.
A shower head 230 is provided in an upper portion (upstream side) of the processing space 205. The shower head 230 includes a cap 231. The lid 231 includes a rim 232, and the rim 232 is supported by the upper container 202 a. Further, the cover 231 includes a positioning portion 233. The positioning portion 233 is fitted to the upper container 202a, thereby fixing the lid 231.
The showerhead 230 has a buffer space 234. The buffer space 234 is a space formed by the cover 231 and the positioning portion 233. The buffer space 234 communicates with the processing space 205. The gas supplied to the buffer space 234 is diffused in the buffer space 234 and uniformly supplied to the processing space 205. Here, although the buffer space 234 and the processing space 205 are described as being separate from each other, the present invention is not limited thereto, and the buffer space 234 may be included in the processing space 205.
The lid 231 is provided with a first gas supply hole 235 for supplying a first gas, a second gas supply hole 236 for supplying a second gas, and a purge gas supply hole 237 for supplying a purge gas.
The first gas supply hole 235 is configured to communicate with a first gas supply pipe 241 as a part of the first gas supply part 240. The second gas supply hole 236 is configured to communicate with a second gas supply pipe 251 which is a part of the second gas supply unit 250. The purge gas supply hole 237 is configured to communicate with a purge gas supply pipe 261 which is a part of the purge gas supply unit 260.
"a" shown in fig. 1 communicates with "a" shown in fig. 2. "B" is in communication with "B" shown in FIG. 2. "C" is in communication with "C" shown in FIG. 2.
Next, the gas supply unit will be described with reference to fig. 2. Fig. 2(a) shows a first gas supply unit 240 as a part of the gas supply unit. The details thereof will be described with reference to fig. 2 (a). The first gas is mainly supplied from the first gas supply pipe 241.
The first gas supply pipe 241 is provided with a first gas supply source 242, an MFC243 as a flow rate controller (flow rate control unit), and a valve 244 as an on-off valve in this order from the upstream direction.
A gas containing a first element (hereinafter referred to as "first gas") is supplied from a first gas supply pipe 241 to the showerhead 230 via an MFC243, a valve 244, and the first gas supply pipe 241.
The first gas is one of the source gases, i.e., the process gases. Here, the first element is, for example, titanium (Ti). That is, the first gas is a metal gas and is a gas containing Ti. Specifically, tetrakis (dimethylamino) titanium (Ti [ N (CH) ] is used3)2]4Also known as TDMAT).
When the first gas is a liquid at normal temperature and normal pressure, a vaporizer, not shown, is preferably provided between the first gas supply source 242 and the MFC 243. Here, the gas will be described.
The first gas supply unit 240 is mainly composed of a first gas supply pipe 241, an MFC243, and a valve 244. Further, it is also conceivable to include the first gas supply source 242 in the first gas supply unit 240.
Next, the second gas supply unit 250, which is a part of the gas supply unit, will be described with reference to fig. 2 (b). The second gas supply pipe 251 is provided with a second gas supply source 252, an MFC253 as a flow rate controller, and a valve 254 in this order from the upstream direction.
Further, a reaction gas that reacts with the first gas is supplied into the showerhead 230 from the second gas supply pipe 251. The reactant gas is also referred to as the second gas. The second gas is one of the process gases, for example, a nitrogen-containing gas. As the nitrogen-containing gas, for example, ammonia (NH) is used3)。
The second gas supply unit 250 is mainly constituted by a second gas supply pipe 251, an MFC253, and a valve 254. The second gas supply unit 250 is also referred to as a reaction gas supply unit because it has a structure for supplying a reaction gas. Further, the second gas supply source 252 may be included in the second gas supply unit 250.
Next, the purge gas supply unit 260, which is a part of the gas supply unit, will be described with reference to fig. 2 (c). The purge gas supply pipe 261 is provided with a purge gas supply source 262, an MFC263 as a flow rate controller, and a valve 264 in this order from the upstream direction.
Further, a purge gas is supplied into the showerhead 230 from a purge gas supply pipe 261. The purge gas is a gas which does not react with the first gas and the second gas, and is a gas for purging the atmosphere in the process chamber 201One of the purge gases, e.g. nitrogen (N)2)。
The purge gas supply unit 260 is mainly composed of a purge gas supply pipe 261, an MFC263, and a valve 264. The purge gas supply 262 may be included in the purge gas supply 260.
The first gas supply unit 240, the second gas supply unit 250, and the purge gas supply unit 260 are collectively referred to as a gas supply unit.
Next, the exhaust unit 280 is described in fig. 1. The exhaust unit 280 for exhausting the ambient gas in the process chamber 201 includes an exhaust pipe 281 communicating with the process space 205. The exhaust pipe 281 is provided with an APC (automatic pressure controller) 282 as a pressure controller for controlling the pressure in the processing space 205 to a predetermined pressure, and a pressure detecting unit 283 for measuring the pressure in the processing space 205. The APC282 includes a valve body (not shown) whose opening degree can be adjusted, and adjusts the conduction of the exhaust pipe 281 in accordance with an instruction from the controller 400 described later. In addition, in the exhaust pipe 281, a valve 284 is provided on the upstream side of the APC 282. The exhaust pipe 281, the valve 284, the APC282, and the pressure detection unit 283 are collectively referred to as an exhaust unit 280.
A pump 285 is provided downstream of the exhaust pipe 281. The pump 285 exhausts the ambient gas in the processing chamber 201 through the exhaust pipe 281.
Next, the electromagnetic wave supply unit 290 will be described.
A window 291 is provided in a side wall of the upper container 202 a. Further, the electromagnetic wave supply structure 292 is fixed to the side wall of the upper container 202 so as to be adjacent to the window 291. The electromagnetic wave supply structure 292 is connected to an electromagnetic wave supply control unit 294.
The window 291 is made of, for example, quartz, and is configured to maintain the atmosphere in the container 202 airtight. The center position of the window 291 in the height direction is set to the same height as the substrate mounting surface 211. More preferably, the height is set to be the same as the surface of the substrate 100.
The electromagnetic wave supply structure 292 has a function of irradiating electromagnetic waves, and is provided with a directional lamp 293 for irradiating ultraviolet light, for example. The directional lamp 293 is configured to irradiate electromagnetic waves in a desired direction. The irradiation surface of the directional lamp 293 faces the window 291. The center position in the height direction on the irradiation surface of the directional lamp 293 is set to the same height as the height of the substrate mounting surface. More preferably, it is disposed at a position slightly higher than the surface of the substrate 100. By setting the position to a slightly higher position, the electromagnetic wave can be irradiated to the surface 103 of the substrate 100 shown in fig. 5 as will be described later.
The electromagnetic wave supply control unit 294 controls the directional lamp 293 in accordance with an instruction from a controller 400 described later. The electromagnetic wave emitted from the directional lamp 293 is emitted from the side substrate 100 through the window 291.
As will be described later, the electromagnetic wave to be supplied is preferably set to a wavelength longer than the length of the width L of the extremely fine groove 102 formed in the substrate 100. Thus, the electromagnetic wave does not bypass the groove 102, and the inside of the groove 102 is not processed by the electromagnetic wave. For example, ultraviolet light having a wavelength of 200nm to 400nm is used for the treatment in the present apparatus. In addition, as long as the wavelength is longer than the length of the width L, electromagnetic waves generated by an excimer lamp (a lamp using Ar or ArF), a mercury lamp, or the like may be used without being limited to ultraviolet light.
Next, the controller 400 is explained.
The substrate processing apparatus 200 includes a controller 400 that controls operations of each part of the substrate processing apparatus 200. As shown in fig. 3, the controller 400 includes at least a computing unit (CPU)401, a temporary storage unit 402, a storage unit 403, and a transmission/reception unit 404. The controller 400 is connected to each component of the substrate processing apparatus 200 via the transmission/reception unit 404, calls a program and a preparation method from the storage unit 403 in accordance with instructions from a host controller and a user, and controls the operation of each component in accordance with the contents thereof. The controller 400 may be a dedicated computer or a general-purpose computer. For example, an external storage device (for example, a magnetic disk such as a magnetic tape, a flexible disk, or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a USB memory (USB flash drive), or a semiconductor memory such as a memory card) 412 storing the program is prepared, and the program is installed in a general-purpose computer using the external storage device 412, whereby the controller 400 of the present embodiment can be configured. The method for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 412. For example, communication means such as the internet or a dedicated line may be used, or the program may be supplied without passing through the external storage device 412 by receiving information from the host device 420 via the transmitter/receiver 411. The controller 400 may be instructed using an input device 413 such as a keyboard or a touch panel.
The storage unit 402 and the external storage device 412 are configured as computer-readable recording media. Hereinafter, they are simply collectively referred to as recording media. Note that when the term "recording medium" is used in this specification, the storage unit 402 alone, the external storage device 412 alone, or both of them may be included.
(substrate treatment Process)
A substrate processing process using the substrate processing apparatus 200 will be described with reference to fig. 4. In the following description, the controller 400 controls the operations of the respective parts constituting the substrate processing apparatus 200.
The substrate carrying-in process will be described. In fig. 4, the description of this step is omitted. In the substrate processing apparatus 200, the lift-up pin 207 is inserted through the through hole 214 of the substrate mounting table 212 by lowering the substrate mounting table 212 to the conveyance position (position) of the substrate 100. Subsequently, the gate valve 149 is opened to communicate the transfer space 206 with a vacuum transfer chamber (not shown). Then, the substrate 100 is carried from the transfer chamber into the transfer space 206 by a wafer transfer machine (not shown), and the substrate 100 is transferred onto the lift pins 207. Thereby, the substrate 100 is supported in a horizontal posture by the lift-up pins 207 projecting from the surface of the substrate mounting table 212.
As shown in fig. 5, a plurality of pillars 101 and a groove 102 having a very small width and a large aspect ratio formed between the pillars 101 are formed on a substrate 100 to be carried in. In the substrate processing step, a film is not formed in the groove 102, but selectively formed on the surface 103 around each of the pillars 101.
When the substrate 100 is carried into the chamber 202, the wafer transfer machine is evacuated to the outside of the chamber 202, and the gate valve 149 is closed to seal the inside of the chamber 202. Then, the substrate 100 is placed on the substrate placement surface 211 by raising the substrate placement table 212, and the substrate 100 is raised to a processing position (substrate processing position) in the processing space 205 by raising the substrate placement table 212.
After the substrate 100 is carried into the transfer space 206, the valve 284 is opened to communicate the processing space 205 and the APC 282. The APC282 controls the flow rate of exhaust gas from the pump 285 to the processing space 205 by adjusting the conductance of the exhaust pipe 281, and maintains the processing space 205 at a predetermined pressure (e.g., 10 degrees f)-5～10-1High vacuum of Pa).
When the substrate 100 is placed on the substrate placing table 212, power is supplied to the heater 213, and the surface of the substrate 100 is controlled to have a predetermined temperature. The temperature of the substrate 100 is, for example, at room temperature or higher and 800 ℃ or lower, preferably at room temperature or higher and 500 ℃ or lower.
After raising the temperature of the substrate 100 to the substrate processing temperature, the following substrate processing is performed with the heat processing while maintaining the substrate 100 at a predetermined temperature. That is, the process gas is supplied from each gas supply pipe into the chamber 202 to process the substrate 100.
Hereinafter, an example in which TDMAT is used as the first gas and NH is used will be described3The gas serves as a second process gas to selectively form a protective film on the surface 103 of the substrate 100. Here, the alternate supply process, that is, the process of alternately supplying different process gases is repeated.
Next, the first gas supplying step S202 will be described. When the substrate mounting table 212 is moved to the wafer processing position as shown in fig. 1, the ambient gas is exhausted from the processing chamber 201 through the exhaust pipe 281, and the pressure in the processing chamber 201 is adjusted. The temperature of the substrate 100 is heated to a predetermined temperature, for example, 400 to 500 ℃, while adjusting the pressure to a predetermined pressure.
Next, the operation of the first gas supply unit 240 will be described.
In the first gas supply part 240, the valve 244 is opened, and the flow rate of the first gas is adjusted by the MFC 243. By such an operation, the first gas, for example, TDMAT gas, which is a gas containing titanium, is supplied from the first gas supply pipe 241 to the process chamber 201. The supplied titanium-containing gas is decomposed to form a titanium-containing layer on the substrate 100. In this case, as shown in fig. 6, the component 104 of the gas containing titanium is mostly attached to the substrate surface 103, but a part of it enters the groove 102. If the predetermined time has elapsed, the valve 244 is closed, and the supply of the titanium-containing gas is stopped.
Next, the first purge step S204 will be described. After the supply of the titanium-containing gas is stopped, a purge gas is supplied from the purge gas supply pipe 261 to purge the atmosphere in the processing chamber 201. Here, the valve 264 is set to open. The component 104 of the gas containing titanium which does not adhere to the substrate 100 in the first gas supply step S202 is removed from the process chamber 201 through the exhaust pipe 281 by the pump 285. At this time, the first gas component entering the tank 102 is also removed, but it is difficult to remove all.
In the first purge step S204, a large amount of purge gas is supplied to remove the titanium-containing gas that does not adhere to the substrate 100 or remain in the process chamber 201 or the head buffer chamber 232, thereby improving the exhaust efficiency. If the predetermined time has elapsed, the valve 264 is closed, and the purge process is ended.
Next, the second gas supply step S206 will be described. If the purging of the process chamber 201 is completed, the second gas supply step S206 is performed. In the second gas supply unit 250, the valve 254 is opened to supply NH as the second gas into the processing chamber 201 through the showerhead 2303A gas. At this time, MFC253 is adjusted so that NH3The flow rate of the gas becomes a predetermined flow rate. NH3The supply flow rate of the gas is, for example, 1000 to 10000 sccm.
And NH3In parallel with the supply of the gas, the electromagnetic wave is irradiated from the electromagnetic wave supply unit 290 to the substrate 100. The irradiated electromagnetic wave reaches the substrate 100 via the window 291. Since the center position in the height direction of the irradiation surface of the directional lamp 293 is the same as the center position in the height direction of the window 290, the irradiated electromagnetic wave is not supplied to the groove 102 but supplied to the surface 103 of the substrate 100 as indicated by an arrow 105 in fig. 6.
The electromagnetic waves cut off and decompose the bonds between the titanium-containing gas components 104 on the substrate surface 103. Supplying passing heat to the cut partAnd NH after decomposition3The gas, a component of the titanium-containing gas which has been cut off, is bonded to a component of ammonia (specifically, nitrogen component), and a layer having a high degree of bonding is formed. In parallel, the remaining component of the titanium-containing gas (for example, chlorine (Cl)) reacts with the hydrogen component of ammonia gas to produce HCl gas and NH4And Cl gas. These gases are exhausted from the exhaust portion.
At this time, since electromagnetic waves are irradiated from the side surface of the substrate 100, it is difficult to enter the groove 102 as illustrated in fig. 6. Therefore, since the components of the gas containing titanium remaining in the grooves 102 are not treated by electromagnetic waves, a film is not formed in the grooves 102, and a film can be selectively formed on the substrate surface 103.
It is preferable that the wavelength of the electromagnetic wave to be used is larger than the width L of the groove 102. If the wavelength is large, the light does not bypass the groove 102, and therefore the processing in the groove 102 can be suppressed more reliably.
At the beginning of NH3After a predetermined time has elapsed after the supply of the gas, the valve 254 is closed to stop NH3And (3) supplying gas. NH3The gas is supplied for 2 to 20 seconds, for example.
Next, the second purging step S208 will be described. At the stop of NH3After the supply of the gas, the second purge step S208 is performed, which is the same as the first purge step S204. The operations of the respective parts in the second purging step S208 are the same as those in the first purging step S204, and therefore, the description thereof is omitted.
Next, the determination step S210 is explained. The controller 400 determines whether or not the cycle is performed a predetermined number of times (n cycles) with the first gas supply step S202, the first purge step S204, the second gas supply step S206, and the second purge step S208 as one cycle. After a predetermined number of cycles, a TiN layer having a desired thickness is formed on the substrate 100. When the processing is performed a predetermined number of times (in the case of yes at S210), the processing shown in fig. 4 is ended. As described above, the protective film is selectively formed on the surface 103.
More preferably, the substrate mounting table 210 is rotated at least in the second gas supplying step. By rotating the substrate 100 together with the substrate mounting table 210, electromagnetic waves can be supplied more uniformly into the surface of the substrate 100.
Next, a substrate carrying-out process is described. When a TiN layer having a desired thickness is formed, the substrate mounting table 212 is lowered, and the substrate 100 is moved to the transfer position. Then, the valve 149 is opened, and the substrate 100 is carried out of the chamber 202 by using a robot arm (not shown).
Further, although the example of irradiating ultraviolet light is described here, microwaves may be used. In this case, the film is treated by applying microwaves to the layer (or film) containing the titanium-containing gas component on the substrate surface and heating the layer or film.
Here, the component of the gas containing titanium on the substrate 100 is processed by the electromagnetic wave, but the processing is not limited to this, and the gas may be excited by irradiating the supplied gas with the electromagnetic wave. In this case, the energy is adjusted to such an extent that the reaction ends at the substrate surface that the excited gas does not bypass into the groove 102.
(second embodiment)
Next, a second embodiment is explained with reference to the drawings.
The structure of the substrate processing apparatus according to the present embodiment will be described mainly with reference to fig. 7 and 8. Fig. 7 is a schematic cross-sectional view of a substrate processing apparatus 300 according to the present embodiment. Fig. 8 is a schematic vertical sectional view of the substrate processing apparatus 300 according to the present embodiment, and is a sectional view taken along line α - α' of the chamber shown in fig. 7. Further, α - α 'is a line from α through the center of the chamber 302 toward α'.
(substrate processing apparatus)
A specific structure of the substrate processing apparatus 300 will be described. Note that the structure given the same reference numeral as in the first embodiment has the same function as in the first embodiment, and the description thereof is appropriately omitted. The substrate processing apparatus 300 is controlled by the controller 400.
As shown in fig. 7 and 8, the substrate processing apparatus 300 is mainly configured by a chamber 302 which is a cylindrical airtight container. Inside the chamber 302, a processing chamber 301 that processes the substrate 100 is constituted. The chamber 302 is connected to the gate valve 305, and the substrate 100 is carried in and out through the gate valve 305.
The process chamber 301 has a process field 306 for supplying a process gas and a purge field 307 for supplying a purge gas. Here, the process regions 306 and the purge regions 307 are alternately arranged in a circumferential manner. For example, the first process region 306a, the first purge region 307a, the second process region 306b, and the second purge region 307b are arranged in this order. As will be described later, the first gas is supplied into the first process field 306a, the second gas is supplied into the second process field 306b, and the inert gas is supplied into the first purge field 307a and the second purge field 307 b. Thereby, a predetermined process is performed on the substrate 100 according to the gas supplied into each region. The process field 306a and the process field 306b are also referred to as a first domain, and the first purge field 307a and the second purge field 307b are also referred to as a purge domain.
The purge zone 307 is a zone that spatially separates the first process zone 306a from the second process zone 306 b. The top plate 308 of the purge region 307 is lower than the top plate 309 of the process region 306. A ceiling plate 308a is provided in the first purge region 307a, and a ceiling plate 308b is provided in the second purge region 307 b. The pressure in the space of the purge region 307 is increased by lowering each ceiling. The adjacent process regions 306 are partitioned by supplying a purge gas to the space. In addition, the purge gas also functions to remove excess gas on the substrate 100.
A substrate mounting plate 317 is provided at the center of the chamber 302, and the substrate mounting plate 317 has a rotation axis at the center of the chamber 302 and is configured to be rotatable.
The substrate mounting plate 317 is configured to be able to arrange a plurality of (for example, 6) substrates 100 on the same plane and on the same circumference along the rotation direction in the chamber 302. The "same surface" described here is not limited to a completely same surface, and when the substrate mounting plate 317 is viewed from above, the plurality of substrates 100 are preferably arranged so as not to overlap with each other.
A concave portion 318 is provided at a supporting position of the substrate 100 on the surface of the substrate mounting plate 317. The same number of recesses 318 as the number of substrates 100 to be processed are arranged at equal intervals (for example, at intervals of 60 °) at positions concentric with the center of the substrate mounting plate 317. Note that, in fig. 7, illustration is omitted for convenience of description.
Each concave portion 318 has, for example, a circular shape when viewed from the top surface of the substrate mounting plate 317 and a concave shape when viewed from the side surface. The diameter of the recess 318 is preferably slightly larger than the diameter of the substrate 100. A substrate mounting surface 319 is provided at the bottom of the concave portion 318, and the substrate 100 can be mounted on the substrate mounting surface 319 by mounting the substrate 100 in the concave portion 318.
The substrate mounting plate 317 is fixed to the core 321. The core 321 is provided at the center of the substrate mounting plate 317, and has a function of fixing the substrate mounting plate 317. A shaft 322 is disposed below the core 321. The shaft 322 supports the core 321.
The lower portion of the shaft 322 penetrates a hole 323 provided in the bottom of the container 302, and is covered with the airtight container 304 outside the chamber 302. Further, as in the first embodiment, the shaft 322 is provided at its lower end with the vertically movable rotating portion 218. In the case where the shaft 322 is not moved up and down, the lifting and lowering rotation unit 218 is simply referred to as a rotation unit 218. The elevation rotation unit 218 is configured to rotate and elevate the substrate mounting plate 317 in accordance with an instruction from the controller 400.
A heater unit 381 incorporating a heater 380 as a heating portion is disposed below the substrate mounting plate 317. The heater 380 heats the substrates 100 mounted on the substrate mounting plate 317. The heater 380 is arranged in a circumferential shape along the shape of the chamber 302.
The heater 380 is connected to the heater control section 387. The heater 380 is electrically connected to the controller 400, and controls power supply to the heater 380 according to an instruction from the controller 400, thereby performing temperature control.
An exhaust structure 386 is disposed on the outer periphery of the substrate mounting plate 317. The exhaust structure 386 includes an exhaust groove 388 and an exhaust buffer space 389. The exhaust groove 388 and the exhaust buffer space 389 are formed in a circumferential shape along the shape of the chamber 302.
An exhaust port 391 and an exhaust port 392 are provided at the bottom of the exhaust structure 386. The exhaust port 391 mainly exhausts the first gas supplied to the processing space 306a and the purge gas supplied from the upstream side thereof. The exhaust port 392 primarily exhausts the second gas supplied to the processing space 306b and the purge gas supplied from the upstream side thereof. Each gas is discharged from the exhaust port 391 and the exhaust port 392 through the exhaust groove 388 and the exhaust buffer space 389.
Next, the gas supply unit will be described. The gas supply unit is the same as that of the first embodiment. As shown in fig. 7, the chamber 302 includes nozzles 345, 355, 365, and 366. A in FIG. 7 is connected to A in FIG. 2 (a). That is, the nozzle 345 is connected to the supply pipe 241. B in fig. 7 is connected to B in fig. 2 (B). That is, the nozzle 355 is connected to the pipe 251. C in fig. 7 is connected to C in fig. 2 (C). That is, the nozzles 365, 366 are connected to the supply pipe 261, respectively.
As shown in fig. 7, an exhaust port 391 and an exhaust port 392 are provided in the chamber 302. An exhaust pipe 334a as a part of the first exhaust portion 334 communicating with the exhaust port 391 is provided. The exhaust pipe 334a is connected to a vacuum pump 334b as a vacuum evacuation device via a valve 334d as an on-off valve and an APC (automatic pressure controller) valve 334c as a pressure regulator (pressure adjustment unit), and is configured to be capable of vacuum evacuation so that the pressure in the processing chamber 301 becomes a predetermined pressure (vacuum degree).
The exhaust pipe 334a, the valve 334d, and the APC valve 334c are collectively referred to as a first exhaust portion 334. The vacuum pump 334b may be included in the first exhaust unit 334.
In addition, a second exhaust portion 335 communicating with the exhaust port 392 is provided. The exhaust port 392 is disposed downstream in the direction of rotation of the processing region 306 b. The second gas and the inert gas are mainly discharged.
An exhaust pipe 335a as a part of the second exhaust part 335 communicating with the exhaust port 392 is provided. The exhaust pipe 335a is connected to a vacuum pump 335b as a vacuum exhaust device via a valve 335d as an on-off valve and an APC valve 335c as a pressure regulator (pressure regulator), and is configured to be capable of performing vacuum exhaust so that the pressure in the processing chamber 301 becomes a predetermined pressure (vacuum degree).
The exhaust pipe 335a, the valve 335d, and the APC valve 335c are collectively referred to as a second exhaust part 335. The vacuum pump 335b may be included in the second exhaust unit 335.
Next, the electromagnetic wave supply unit 290 will be described. The window 291 is disposed adjacent to a wall of the chamber 302, the second processing region 306 b. If considered in terms of the direction of rotation, is disposed on the upstream side of the direction of rotation of the nozzle 255, on the downstream side of the first purge region 307 a.
The center position in the height direction of the window 291 is set to the same height as the height of the substrate mounting plate 317. The center position in the height direction of the illumination surface of the directional lamp 293 provided in the electromagnetic wave supply structure 292 is arranged at a position slightly higher than the surface of the substrate 100.
The electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to a region on the upstream side in the rotation direction of the nozzle 355 in the second region 306 b. Therefore, before supplying the second gas, the electromagnetic wave is irradiated to the surface 103 of the substrate 100 moved from the first purge region 307a to perform the process.
Since the electromagnetic wave is irradiated before the second gas is supplied, the electromagnetic wave can be reliably irradiated to the surface 103 without colliding with the gas.
When the electromagnetic wave is not applied to the layer on the substrate 100 but applied to the gas supplied from the nozzle 355, the window 291 is preferably provided on the downstream side in the rotation direction of the nozzle 355. By being provided on the downstream side, electromagnetic waves can be supplied to the downstream region of the nozzle 355, and thus the second gas can be excited reliably.
(substrate treatment Process)
Next, a substrate processing step according to a second embodiment will be described with reference to fig. 9. Fig. 9 is a flowchart showing a substrate processing flow according to the present embodiment. In the following description, the controller 400 controls the operations of the respective components of the substrate processing apparatus 300.
Here, an example will be described in which a titanium nitride (TiN) film is formed as a thin film on the substrate 100 using a titanium-containing gas as a first gas and ammonia gas as a second gas.
The substrate carrying-in/placing process will be described. Fig. 9 is omitted from illustration. The substrate mounting plate 317 is rotated to move the recess 318 to a position facing the gate valve 305. Subsequently, the lift-up pin (not shown) is raised to penetrate through the through hole (not shown) of the substrate mounting plate 317. Subsequently, the gate valve 305 is opened to communicate the chamber 302 with a vacuum transfer chamber (not shown). Then, the substrate 100 is transferred from the transfer chamber to the lift pins by a transfer machine (not shown), and the lift pins are lowered. Thereby, the substrate 100 is supported by the recess 318 in a horizontal posture.
As shown in fig. 5, a plurality of pillars 101 and extremely fine-width grooves 102 having a large aspect ratio formed between the pillars 101 are formed in a substrate 100 to be carried in. In the substrate processing step, a film is not formed in the groove 102, but selectively formed on the surface 103 around each of the pillars 101.
The substrate mounting plate 317 is rotated so that the recess 318 on which the substrate 100 is not mounted faces the gate valve 305. Then, the substrate is similarly placed in the recess 318. And the process is repeated until the substrate 100 is placed in all the recesses 318.
When the substrate 100 is carried into the concave portion 318, the substrate transfer machine is evacuated to the outside of the substrate processing apparatus 300, and the gate valve 305 is closed to seal the chamber 302.
When the substrate 100 is placed on the substrate placing plate 317, power is supplied to the heater 308 in advance, and the surface of the substrate 100 is controlled to have a predetermined temperature. The temperature of the substrate 100 is, for example, 400 ℃ to 500 ℃. The heater 380 is constantly energized at least from the substrate loading/mounting step to the end of the substrate unloading step described later.
The substrate mounting plate rotation starting step S310 will be described. When the substrate 100 is placed in each recess 318, the rotating portion 324 rotates the substrate placing plate 317 in the R direction. By rotating the substrate mounting plate 317, the substrate 100 moves in the order of the first process region 306a, the first purge region 307a, the second process region 306b, and the second purge region 307 b.
The gas supply starting step S320 will be described. When the substrate 100 is heated to a desired temperature and the substrate mounting plate 317 is rotated at a desired rotation speed, the valve 244 is opened to start supplying the gas containing titanium into the first processing region 306 a. In parallel with this, the valve 254 is opened to supply NH into the second processing region 306b3A gas.
At this time, the MFC243 is adjusted so that the flow rate of the titanium-containing gas becomes a predetermined flow rate. The flow rate of the titanium-containing gas is, for example, 50sccm or more and 500sccm or less.
In addition, MFC253 is adjusted so that NH3The flow rate of the gas is a predetermined flow rate. Furthermore, NH3The supply flow rate of the gas is, for example, 100sccm or more and 5000sccm or less.
After the substrate loading/mounting step S310, the inside of the processing chamber 301 is continuously exhausted by the first exhaust unit 334 and the second exhaust unit 335, and N as a purge gas is supplied from the inert gas supply unit 260 into the first purge region 307a and the second purge region 307b2A gas.
The film forming step S330 will be described. Here, the basic flow of the film forming step S330 will be described, and details will be described later. In the film forming step S330, each substrate 100 has a titanium-containing layer formed in the first process field 360a, and further has a titanium-containing layer and NH in the second process field 306b after the rotation3The gas reacts to form a titanium-containing film on the substrate 100. The substrate mounting part is rotated a predetermined number of times to obtain a desired film thickness.
The gas supply stopping step S340 will be described. After the substrate mounting portion is rotated a predetermined number of times, the valves 244 and 254 are closed, and the supply of the gas containing titanium to the first processing region 306a and the supply of NH are stopped3The supply of gas to the second processing region 306 b.
The substrate mounting plate rotation stopping step S350 will be described. After the gas supply stopping step S340, the rotation of the substrate mounting plate 317 is stopped.
The substrate carrying-out step will be described. Illustration is omitted in fig. 9. The substrate mounting plate is rotated so that the substrate 100 to be carried out is moved to a position facing the gate valve 205. Then, the substrate is carried out in a reverse manner to the carrying-in of the substrate. These operations are repeated to carry out all the substrates 100.
Next, the film forming step S330 will be described in detail. During the film forming step S330, the plurality of substrates 100 are sequentially passed through the first process area 306a, the first purge area 307a, the second process area 306b, and the second purge area 307b by the rotation of the substrate mounting plate 317.
The film forming step S330 is the same as the flow of fig. 2 in detail. The following description will focus on one substrate 100 among the plurality of substrates 100 placed on the substrate placing section 317 from the first gas supplying step S202 to the second purging step S208. Hereinafter, the following description will focus on the differences.
The first gas supplying step S202 of the present embodiment will be described. In the first gas supplying step S202, a gas containing titanium is supplied to the substrate 100 when the substrate 100 passes through the first processing region 306 a. The supplied gas containing titanium is decomposed to form a titanium-containing layer on the substrate 100. In this case, as shown in fig. 6, the component 104 of the gas containing titanium is mostly attached to the substrate surface 103, but a part thereof enters the groove 102.
The first purge step S204 of the present embodiment will be described. After passing through the first processing region 306a, the substrate 100 moves to the first purge region 307 a. When the substrate 100 passes through the first purge region 307a, the component 104 of the titanium-containing gas that does not form a strong bond on the substrate 100 in the first process region 306a is removed from the substrate 100 by the inert gas. At this time, the first gas component entering the tank 102 is also removed, but it is difficult to remove all.
The second gas supply step S206 will be described. After passing through the first purge region 307a, the substrate 100 moves to the second process region 306 b. If the substrate 100 passes through the upstream of the nozzle 355, the electromagnetic wave is irradiated from the electromagnetic wave supply part 290 to the substrate 100. The irradiated electromagnetic wave reaches the substrate 100 via the window 291. Since the center position in the height direction of the irradiation surface of the directional lamp 293 is the same as the center position in the height direction of the window 290, the irradiated electromagnetic wave is not supplied to the groove 102 but supplied to the surface 103 of the substrate 100 as indicated by a broken-line arrow 105 in fig. 6.
As in the first embodiment, the electromagnetic wave cuts off and decomposes the bonds between the titanium-containing gas components on the substrate surface 103. NH decomposed by heat is supplied to the cut portion3Gas, composition of the cut-off titanium-containing gas and NH3The components of the gas combine to form a layer with a high degree of combination.
At this time, since the electromagnetic wave is irradiated from the side surface of the substrate 100, it is difficult to enter the groove 102 as shown in fig. 6. Therefore, the components of the titanium-containing gas remaining in the tank 102 are not treated by the electromagnetic wave. Therefore, a film is not formed in the groove 102, and a film can be selectively formed on the substrate surface 103.
The second purging process S208 will be described. After the substrate 100 passes through the second process zone 306b, it moves to the second purge zone 307 b. HCl, NH desorbed from a layer on the substrate 100 in the second process zone 306b are removed from the substrate 100 by the inert gas while the substrate 100 passes through the second purge zone 307b4CL gas, residual gas, etc.
Thus, at least two kinds of second gases that react with each other are sequentially supplied to the substrate. The first gas supply step S202, the first purge step S204, the second gas supply step S206, and the second purge step S208 described above are performed in one cycle.
The determination step S210 will be described. The controller 400 determines whether the above one cycle is performed a predetermined number of times. Specifically, the controller 400 counts the number of rotations of the substrate mounting plate 317.
When the above-described one cycle is not performed a predetermined number of times (no in S210), the substrate mounting plate 317 is further rotated continuously, and the cycle including the first gas supply step S202, the first purge step S204, the second gas supply step S206, and the second purge step S208 is repeated. By stacking in this manner, a thin film is formed.
When the above one cycle is performed a predetermined number of times (yes in S210), the film forming step S330 is ended. In this way, by performing the above one cycle a predetermined number of times, a thin film having a predetermined film thickness is formed. As described above, the protective film is selectively formed on the surface 103.
However, as described above, each domain is affected by the same heater. Therefore, it is difficult to separately process the first gas and the second gas at different temperatures. In contrast, in the case of the present embodiment, since electromagnetic waves can be supplied to the second domain independently of the other domains, energy can be filled. That is, the temperature of the substrate 100 can be independently raised. It is therefore expedient if the first gas and the second gas are treated with different energies, for example if the first gas and the second gas are treated at different temperatures.
(third embodiment)
Next, a third embodiment will be described. The substrate mounting table of the third embodiment is different from that of the first embodiment. The other structure is the same as that of the first embodiment. Hereinafter, a difference will be mainly described with reference to fig. 10. In addition, the broken line arrows indicate electromagnetic waves irradiated from the electromagnetic wave supply structure 292.
First, the feared matters of the embodiment of fig. 1 will be explained. In the case of the first embodiment, the electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to the surface of the substrate, but depending on the mounting position of the directional lamp 293, the electromagnetic wave may not reach the center of the substrate 100. That is, the processing state of the substrate 100 may be uneven.
When the installer mounts the directional lamp 293, setting is made so that the electromagnetic wave reaches the center of the substrate 100, but it is difficult to achieve this due to mounting accuracy and the like. For example, due to mounting accuracy, the electromagnetic wave may be slightly irradiated upward, and as a result, the center of the substrate 100 may be misaligned.
Therefore, in the present embodiment, the substrate mounting table 212 is tilted, and the substrate mounting table 212 is rotated. By inclining the lamp, the center axis of the irradiation surface of the directional lamp 293 can intersect the substrate mounting surface 211. Further, since the substrate mounting surface 211 is rotated in an inclined state, the substrate 100 mounted thereon can be rotated in an inclined supported state. Further, the substrate mounting table 212 may be provided with a recess 212a, and the substrate 100 may be mounted in the recess 212a so that the position of the substrate 100 does not deviate during rotation.
Thus, even if the directional lamp 293 is mounted with low accuracy and the electromagnetic wave is directed upward to some extent, the electromagnetic wave can reach the center of the substrate 100. Further, since the substrate 100 is controlled to rotate and the end of the substrate 100 is brought close to the electromagnetic wave supply unit 292, the electromagnetic wave can reach the end of the substrate 100.
(fourth embodiment)
Next, a fourth embodiment will be described. The substrate mounting plate 317 of the fourth embodiment is different from that of the second embodiment. The other structure is the same as that of the first embodiment. Hereinafter, a difference will be mainly described with reference to fig. 11. Note that the broken-line arrows indicate electromagnetic waves irradiated from the electromagnetic wave supply structure 292.
First, the feared matters of the second embodiment will be described. Here, the electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to the surface of the substrate, but depending on the mounting position of the directional lamp 293, the electromagnetic wave may not reach the center of the substrate 100. This is due to the problem of mounting accuracy, as in the first embodiment.
Therefore, in the present embodiment, the substrate mounting plate 317 is tilted, and the substrate mounting plate 317 is rotated. The substrate mounting plate 317 is configured to be inclined downward from the center to the end.
In this case, since the concave portion 318 is also inclined, the substrate 100 placed thereon is rotated while being supported obliquely. Therefore, as in the third embodiment, even if the directional lamp 293 is mounted with low accuracy and the electromagnetic wave is directed upward to some extent, the electromagnetic wave can reach the center of the substrate 100. Further, since the substrates 100 revolve, the irradiation amount of the electromagnetic wave can be made uniform among the plurality of substrates 100. Therefore, the processing between the substrates 100 can be performed uniformly.
(fifth embodiment)
Next, a fifth embodiment will be described. The fifth embodiment is a modification of the fourth embodiment, and the inclination of the substrate mounting plate 317 is different. The other structure is the same as that of the third embodiment. Hereinafter, a difference will be mainly described with reference to fig. 12.
In the present embodiment, the substrate mounting plate 317 is tilted, and the substrate mounting plate 317 is rotated. The substrate mounting plate 317 is inclined upward from the center to the end.
In this case, since the concave portion 318 is also inclined, the substrate 100 placed thereon is rotated while being supported obliquely. Therefore, as in the fourth embodiment, even if the directional lamp 293 is mounted with low accuracy and the electromagnetic wave is directed upward to some extent, the electromagnetic wave can reach the center of the substrate 100. Further, since the outer peripheral side of the concave portion 318 is directed upward, the substrate 100 does not collide with the outer periphery of the concave portion 318 even if the substrate 100 revolves and centrifugal force acts. Therefore, the substrate 100 does not come off the recess.
The embodiments of the present invention have been described above. In the above description, a case where a gas containing titanium is used as the first gas is described, but the first gas is not limited thereto, and a gas containing other metals or a gas containing silicon may be used depending on the contents of the treatment. Further, a gas containing nitrogen is used as the second gas, but the second gas is not limited thereto, and depending on the contents of the treatment, a gas containing oxygen or a gas containing hydrogen may be used.
In addition, N is used as inert gas2The gas is exemplified, but is not limited thereto as long as it is a gas that does not react with the process gas. For example, an inert gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas may be used.
In the above description, the terms "the same" are used, but the terms "the same" may be substantially the same, and include, for example, a state slightly higher or lower than the substrate mounting surface when the substrate mounting surface has the same height.

Claims (20)

1. A substrate processing apparatus is characterized in that,
the substrate processing apparatus includes:
a substrate mounting section provided in the processing chamber and having a substrate mounting surface on which a substrate having pillars constituting a plurality of grooves is mounted;
a gas supply unit configured to supply a process gas to the process chamber;
an exhaust unit configured to exhaust ambient gas from the processing chamber;
and an electromagnetic wave supply unit configured to supply an electromagnetic wave from a side of the substrate so as to treat the surface of the substrate without treating the inside of the groove.
2. The substrate processing apparatus according to claim 1,
the wavelength of the electromagnetic wave irradiated from the electromagnetic wave supply part is configured to be longer than the length of the width of the groove.
3. The substrate processing apparatus according to claim 2,
the electromagnetic wave supply unit includes a directional lamp, and the height of the center of the irradiation surface of the directional lamp is set to be the same as the height of the substrate mounting surface disposed while the process gas is supplied to the process chamber.
4. The substrate processing apparatus according to claim 3,
the directional lamp is disposed such that a central axis of an irradiation surface of the directional lamp intersects with the substrate mounting surface.
5. The substrate processing apparatus according to claim 4,
the gas supply unit includes: a first gas supply unit for supplying a first gas; a second gas supply unit for supplying a second gas that reacts with the first gas; and a purge gas supply unit for supplying a purge gas,
the processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied,
the plurality of substrate mounting surfaces are circumferentially arranged on the substrate mounting portion, and the plurality of substrates pass through the respective domains by rotating the substrate mounting portion.
6. The substrate processing apparatus according to claim 1,
the electromagnetic wave supply unit includes a directional lamp, and the height of the center of the irradiation surface of the directional lamp is set to be the same as the height of the substrate mounting surface disposed while the process gas is supplied to the process chamber.
7. The substrate processing apparatus according to claim 6,
the directional lamp is disposed such that a central axis of an irradiation surface of the directional lamp intersects with the substrate mounting surface.
8. The substrate processing apparatus according to claim 7,
the gas supply unit includes: a first gas supply unit for supplying a first gas; a second gas supply unit for supplying a second gas that reacts with the first gas; and a purge gas supply unit for supplying a purge gas,
the processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied,
the plurality of substrates are arranged on the substrate mounting portion in a circumferential manner, and the plurality of substrates pass through the respective domains by rotating the substrate mounting portion.
9. The substrate processing apparatus according to claim 6,
the gas supply unit includes: a first gas supply unit for supplying a first gas; a second gas supply unit for supplying a second gas that reacts with the first gas; and a purge gas supply unit for supplying a purge gas,
the processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied,
the plurality of substrates are arranged on the substrate mounting portion in a circumferential manner, and the plurality of substrates pass through the respective domains by rotating the substrate mounting portion.
10. The substrate processing apparatus according to claim 1,
the gas supply unit includes: a first gas supply unit for supplying a first gas; a second gas supply unit for supplying a second gas that reacts with the first gas; and a purge gas supply unit for supplying a purge gas,
the processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied,
the plurality of substrate mounting surfaces are circumferentially arranged on the substrate mounting portion, and the plurality of substrates pass through the respective domains by rotating the substrate mounting portion.
11. The substrate processing apparatus according to claim 10,
the substrate mounting portion is configured to be inclined upward from the center portion to the end portion.
12. The substrate processing apparatus according to claim 11,
the electromagnetic wave irradiated from the electromagnetic wave supply unit is configured to be irradiated to a region in the second region that is upstream in the rotation direction from the region to which the gas is supplied from the second gas supply unit.
13. The substrate processing apparatus according to claim 11,
the electromagnetic wave irradiated from the electromagnetic wave supply unit is configured to be irradiated to a region downstream in the rotation direction from a region to which the gas is supplied from the second gas supply unit in the second region.
14. The substrate processing apparatus according to claim 10,
the substrate mounting portion is configured to be inclined downward from a center portion to an end portion.
15. The substrate processing apparatus according to claim 14,
the electromagnetic wave irradiated from the electromagnetic wave supply unit is configured to be irradiated to a region in the second region that is upstream in the rotation direction from the region to which the gas is supplied from the second gas supply unit.
16. The substrate processing apparatus according to claim 14,
the electromagnetic wave irradiated from the electromagnetic wave supply unit is configured to be irradiated to a region downstream in the rotation direction from a region to which the gas is supplied from the second gas supply unit in the second region.
17. The substrate processing apparatus according to claim 10,
the electromagnetic wave irradiated from the electromagnetic wave supply unit is configured to be irradiated to a region upstream in the rotation direction of the second region from the region to which the gas is supplied from the second gas supply unit.
18. The substrate processing apparatus according to claim 10,
the electromagnetic wave irradiated from the electromagnetic wave supply unit is configured to be irradiated to a region downstream in the rotation direction from a region to which the gas is supplied from the second gas supply unit in the second region.
19. A method for manufacturing a semiconductor device, characterized in that,
the method for manufacturing the semiconductor device includes the steps of:
placing a substrate having a plurality of posts constituting a plurality of grooves on a substrate placing section having a substrate placing surface, the substrate placing section being provided in a processing chamber; and
supplying electromagnetic waves from a side of the substrate to treat a surface of the substrate without treating the inside of the groove, supplying a process gas to the process chamber, and exhausting an ambient gas from the process chamber.
20. A recording medium, characterized in that,
the recording medium records a program for causing a computer to execute:
placing a substrate having a plurality of posts constituting a plurality of grooves on a substrate placing section having a substrate placing surface, the substrate placing section being provided in a processing chamber; and
supplying electromagnetic waves from a side of the substrate to treat a surface of the substrate without treating the inside of the groove, supplying a process gas to the process chamber, and exhausting an ambient gas from the process chamber.
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