JP2013073947A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide means that suppresses burning of an O-ring disposed at a substrate transport opening or the like in a non-processing space and suppresses the occurrence of particles by suppressing a microwave leakage from a processing space to the non-processing space in a processing chamber.SOLUTION: A substrate processing apparatus includes: a processing container 18 that forms a processing chamber 110 for processing a substrate and is constructed of a conductive wall; a conductive substrate support base 12 provided inside the processing chamber and having a substrate mounting surface configured to place the substrate thereon and a side wall perpendicular to the substrate mounting surface; a microwave supply part 23 to supply a microwave into a processing space that is the space located closer to the substrate mounting surface during a substrate heat treatment; a substrate transport opening 71; and a groove 17 for suppressing passage of the microwave. The substrate transport opening 17 is disposed on a wall of a processing container for forming a non-processing space 130 that is the space located opposite the substrate mounting surface during the substrate heat treatment, and allows the substrate to be transported to the inside and outside of the processing chamber. The groove 17 is disposed on the side wall of the substrate support base or an inner wall of the processing container opposed to the side wall, and suppresses the passage of the microwave supplied to the processing space into the non-processing space.

Description

  The present invention relates to a substrate processing technique for manufacturing a semiconductor device such as an IC (Integrated Circuit) on a substrate, and more particularly, a substrate that heats a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) using microwaves. The present invention relates to a processing apparatus.

One of the semiconductor manufacturing processes is WLP (Wafer Level Package) technology. This process is completed by processing up to the final package process in the wafer state. Rewiring, sealing resin, and solder bumps necessary for the semiconductor package are formed on the wafer on which the IC is manufactured, and separated into individual pieces. The size can be reduced to the same size as the chip.
In normal LSI manufacturing, after the previous process is completed, the back grind is performed by polishing and thinning the wafer, dicing for cutting the wafer into individual pieces or chips, mounting for mounting the chips on the pads, bonding, molding, and finishing processes. , Go to a post-process such as a test.
On the other hand, in the manufacture of SiP (System in Package), which is a kind of WLP, a new intermediate process is inserted between the previous process and the subsequent process, that is, from the time of receiving the wafer in the previous process until the back grinding. In addition, a process such as rewiring is performed to process the upper part of the chip wiring. Further, an interlayer insulating film is formed from polyimide or the like to form a Cu wiring, and a solder ball is mounted on the tip.
Since the wafer is polished after the intermediate process, attention should be paid to the thickness and warpage of the wafer in the intermediate process, and attention should be paid to the temperature during the heat treatment.
When an interlayer insulating film is formed with the above polyimide, the polyimide is heated and cured. However, in the heat curing process using a conventional resistance heating type heater, the wafer itself becomes a high temperature, so it is not easy to suppress the warpage of the wafer. Absent. Therefore, there is a demand for a technique that can perform heat curing of polyimide while keeping the wafer at a low temperature.

  In the following Patent Document 1, a substrate is carried into a processing chamber from a substrate transfer port and placed on a substrate support, and after closing the substrate transfer port with a gate valve, a microwave is supplied into the processing chamber, A technique for heat-treating a substrate is disclosed.

JP 2011-66254 A

In the technique of Patent Document 1 described above, the processing chamber is sealed with a gate valve during heat treatment, but it is necessary to electrically connect the wall forming the processing chamber and the gate valve in order to prevent microwave leakage. . For this reason, a conductive O-ring, for example, an O-ring mixed with a metal compound is mounted between the wall forming the processing chamber and the gate valve. However, if the compound mixing amount is small, the O-ring is burned out by microwave heating, and if the compound mixing amount is large, particles may be generated when the gate valve is opened or closed. Thus, O-ring burnout and particle generation are in a trade-off relationship, and it is not easy to appropriately adjust the compound material and mixing amount.
The object of the present invention is to solve the above-described problems, suppress an excessive increase in substrate temperature, heat-treat a substrate including a polyimide film to be heated, and further suppress O-ring burning and particle generation. It is to provide a substrate processing technique that can be used.

In the present invention, the microwave passing suppression groove provided on the side wall of the substrate support base or the processing chamber wall facing the side wall suppresses the penetration of microwaves into the processing space irradiated with microwaves in the processing chamber. A substrate transport port is provided in the non-processing space. In this state, by heating the substrate on the substrate support using microwaves, a heating target such as a polyimide film is heated while suppressing excessive heating of the substrate. A typical configuration of the substrate processing apparatus according to the present invention is as follows.
Forming a processing chamber for processing the substrate, and a processing container composed of conductive walls;
A conductive substrate support provided in the processing chamber and having a substrate mounting surface on the side on which the substrate is mounted and a side wall perpendicular to the substrate mounting surface;
A microwave supply unit that supplies a microwave to a processing space that is a space on the substrate placement surface side in the processing chamber during the substrate heat treatment;
A substrate transfer port provided on a wall of the processing container for forming a non-processing space that is a space opposite to the substrate mounting surface in the processing chamber during the substrate heat treatment, and for transferring the substrate to the outside of the processing chamber;
A microwave passage suppression groove that is provided on the side wall of the substrate support or the inner wall of the processing container facing the side wall and suppresses the microwave supplied to the processing space from passing to the non-processing space. When,
A substrate processing apparatus comprising:

  When the substrate processing apparatus is configured as described above, it is possible to efficiently heat-treat a substrate including a heating target while suppressing leakage of microwaves from the processing space to the non-processing space and suppressing an excessive increase in the substrate temperature. it can. In addition, when the substrate is heated, it is possible to suppress burning of the O-ring at the substrate transfer port and generation of particles due to microwaves.

It is a schematic plan view which shows the structure of the substrate processing apparatus which concerns on embodiment of this invention. It is a schematic side view which shows the structure of the substrate processing apparatus which concerns on embodiment of this invention. It is explanatory drawing of the substrate conveyance flow in the substrate processing apparatus which concerns on embodiment of this invention. It is explanatory drawing of the process module of the substrate processing apparatus which concerns on embodiment of this invention. It is explanatory drawing of the microwave passage suppression part which concerns on embodiment of this invention. It is explanatory drawing of the equivalent circuit of the microwave passage suppression part which concerns on embodiment of this invention. It is sectional drawing which looked at the substrate support stand and substrate support stand support mechanism which concern on embodiment of this invention from the side surface. It is the elements on larger scale of FIG.

The substrate processing apparatus 1 which concerns on embodiment of this invention is demonstrated using FIG. 1, FIG. FIG. 1 is a schematic plan view showing a configuration when the substrate processing apparatus 1 is viewed from above. FIG. 2 is a schematic side view showing a configuration when the substrate processing apparatus is viewed from the side.
A substrate processing apparatus 1 according to an embodiment of the present invention is configured as a semiconductor manufacturing apparatus that executes a predetermined process in order to manufacture a semiconductor. Hereinafter, the substrate processing apparatus 1 which concerns on embodiment of this invention is demonstrated as an apparatus which heats the wafer which is a board | substrate using a microwave.

A substrate processing apparatus 1 according to an embodiment of the present invention includes at least a process module (PM) 10 including a processing chamber that performs predetermined processing on a wafer as a substrate, and a front including a transfer chamber in which the wafer is transferred. An end module (EFEM; Equipment Front End Module) 20 and a substrate container (for example, FOUP (front-opening unifiled pod), hereinafter referred to as “pod”) that is accommodated and transported by a wafer are connected to a transfer device outside the apparatus. It is comprised by the load port (LP; Load Port) 30 as a container mounting base to deliver.
At least one process module 10 and one load port 30 are provided. Although three process modules 10 and three load ports 30 are provided in FIG. 1, this configuration is an example, and the configuration of the present invention is not limited to this configuration.
The control unit 40 as a control unit controls a transfer robot 202 as a substrate transfer unit, which will be described later, by executing a predetermined program file, and the wafer between the process module 10, the front end module 20, and the load port 30 is controlled. Transport.
In addition, the control unit 40 controls various mechanisms constituting the process module 10 by executing a predetermined program file, and processes the wafer in the process module 10.

(Process module 10)
The process module 10 performs processing such as heat treatment (annealing) and modification processing for improving film quality on the wafer. Details of the process module 10 will be described later.
The process module 10 can communicate with the front end module 20 via a gate valve (GV) 100.

(Front end module 20)
The front end module 20 includes a substrate platform 200 on which a wafer processed by the process module 10 is placed, a transfer robot 202, a fan 201, and the like.
The substrate platform 200 is provided at one corner of the space constituting the front end module 20 and is provided on the table 203. The platform 203 is provided at a position that does not overlap the robot support platform 205 that supports the transfer robot 200, and is positioned so as not to block the gate valve 100 and the shutter 300.

A fan 201 is provided on the ceiling of the front end module 20. The fan 201 supplies air from which dust has been removed from the ceiling toward the bottom of the substrate platform 200, the transfer robot 202, and the front end module 20. As a result, an air flow 204 is formed.
An exhaust pipe 206 for exhausting the air supplied by the fan 201 is provided at the bottom of the front end module 20. The exhaust pipe 206 is provided with a gas discharge valve 207 and a pump 208 from the upstream side of the gas flow, and controls the exhaust of the atmosphere in the front end module 20.
By forming the air flow 204, the inside of the front end module 20 is always kept in a clean atmosphere, and exhaust from the exhaust pipe 206 prevents dust and the like in the front end module 20 from rolling up.

As described above, the exhaust section of the front end module 20 is not only configured to exhaust the atmosphere by providing the exhaust pipe 206, the exhaust valve 207, and the pump 208, but may also be configured as follows. Good.
That is, a slit having a structure with an adjustable opening area is provided at the bottom of the front end module 20. In such a configuration, in order to suppress particle intrusion from the outside, adjustment is made so that the inside is slightly pressurized from the outside. The air is discharged from the slit at the bottom to the outside by the air flow 204 supplied from the fan 201.
With such a configuration, it is possible to provide a device at a lower cost.

As described above, the transfer robot 202 is supported by the robot support table 205.
In addition, the transfer robot 202 is configured such that the arm and its support shaft rotate horizontally in order to transfer the wafer between the process module 10, the pod 301 mounted on the load port 30, and the substrate platform 200. Is done.
Furthermore, since it moves to the vicinity of each gate valve 100 (1) to 100 (3), the vicinity of the shutters 300 (1) to 300 (3), and the vicinity of the substrate support unit 200, it is parallel to the arrangement direction of the process modules 10. Further, it is configured to be able to slide in the horizontal direction on the robot support table 205.
With the above configuration, the transfer robot 202 can transfer a wafer between the process module 10, the pod 301 mounted on the load port 30, and the substrate platform 200.
In addition, the transfer robot 202 includes one arm as a substrate holding unit that holds the wafer one above the other. For example, the transfer robot 202 places an unprocessed wafer on the tip of the upper arm and carries it into each process module 10, and places the processed wafer in the process module 10 on the tip of the lower arm. It is configured so that it can be carried out (wafers can be transferred and transferred).

  The substrate platform 200 supports the processed wafer that has been heat-processed by the process module 10. An air flow 204 is supplied to the mounted wafer to cool the heat-treated wafer.

  1 and 2, the same number (three) of the process modules 10 and the wafer placement number of the substrate platform 200 are provided. However, the present invention is not limited to such a configuration, and the process The number of modules 10 can be appropriately changed according to the time during which the wafer is transferred. Further, the front end module 20 can communicate with the load port 30 via the shutter 300.

(Load port 30)
The load port 30 is a mounting table on which a pod 301 as a substrate container is mounted, and a plurality of load ports 30 are provided. As shown in FIG. 1, the same number of load ports 30 as the process modules 10 are provided. However, how many load ports 30 are provided differs depending on a wafer transfer method to be described later. Specifically, when a wafer is transferred by a distribution method for transferring a wafer from one pod 301 to a plurality of process modules 10, at least one load port 30 may be provided. When a wafer is transported by a parallel system for transporting, a predetermined number of load ports 30 are provided according to a transport recipe describing the transport destination.

(Wafer transfer method)
Hereinafter, a method for carrying the wafer by the substrate processing apparatus 1 according to the embodiment of the present invention will be described with reference to FIG. FIG. 3 is a diagram for explaining a distribution method in which the wafers 111 accommodated in one pod 301 are transferred to each process module 10 one by one. Here, it is assumed that the wafer is transferred between the load port 30 (1) and the process modules 10 (1) to 10 (3).
First, as shown by the arrow A, the (first) wafer is taken out from the pod 301 placed on the load port 30 (1) and loaded into the process module 10 (1) as shown by the arrow B.
Next, as shown by the arrow A, the next (second) wafer is taken out from the pod 301 placed on the load port 30 (1), and as shown by the arrow C, the process module 10 (2) is loaded. Carry in.
Further, as shown by an arrow A, the next (third) wafer is taken out from the pod 301 placed on the load port 30 (1) and loaded into the process module 10 (3) as shown by an arrow D. To do.
The wafers processed in the process modules 10 (1) to 10 (3) are placed on the substrate platform 200 as indicated by the arrow E and cooled by the airflow 204. The cooled wafer is sequentially taken out and transferred to the pod of the load port 30 (1).

(Details of the process module 10)
Next, the process module 10 of FIG. 1 will be described in detail with reference to FIG.
FIG. 4 is a vertical cross-sectional view of the process module 10 according to the embodiment of the present invention during the substrate heating process. The process module 10 includes a processing chamber 110, a microwave supply unit such as a microwave generation unit 23, a gas supply unit such as a gas supply pipe 52, a gas discharge unit such as a gas discharge pipe 62, and a cooling unit such as a refrigerant supply pipe 36. Etc. are provided.
The processing chamber 110 heats a wafer 111 as a semiconductor substrate which is a dielectric, for example, a silicon wafer. A conductive substrate support 12 is provided in the processing chamber 110, and the wafer 111 is placed on the substrate support pins 13 on the substrate support 12.
The processing chamber 18 that forms the processing chamber 110 has a wall (outer shell) that forms the processing chamber made of a metal material such as aluminum (Al) or stainless steel (SUS). Is shielded in a microwave manner.

(Microwave supply unit)
The microwave generator 23 generates, for example, a fixed frequency microwave. As the microwave generator 23, for example, a microtron, a klystron, a gyrotron, or the like is used. The microwave generated by the microwave generator 23 is irradiated into the processing chamber 110 from the waveguide port 22 through the waveguide 21. The waveguide 21 is provided with a matching mechanism (not shown) that reduces the reflected power inside the waveguide 21.
The microwave supplied into the processing chamber 110 is irradiated toward the surface of the wafer 111. The microwave hitting the wafer 111 in the processing chamber 110 is absorbed by the wafer 111, and the wafer 111 is dielectrically heated by the microwave.
The waveguide 21, the waveguide 22, the microwave generator 23, and the matching mechanism 26 constitute a microwave supply unit.

(Substrate support pin and substrate support base)
In the processing chamber 110, substrate support pins 13 for supporting the wafer 111 are provided. The substrate support pins 13 are provided so that the center of the supported wafer 111 and the center of the processing chamber 110 substantially coincide with each other in the vertical direction. The substrate support pins 13 are composed of a plurality of (three in the present embodiment) made of, for example, quartz or Teflon (registered trademark), and support the wafer 111 at the upper end thereof.

A conductive substrate support 12 is provided below the substrate support pins 13 and below the wafer 111. The substrate support 12 is made of a metal material that is a conductor such as aluminum (Al). The substrate support 12 has a substrate mounting surface on the side on which the wafer 111 is mounted and a side wall perpendicular to the substrate mounting surface, and the shape viewed from above is a circle larger than the outer diameter of the wafer 111. It is formed in a disk shape or a cylindrical shape. As described above, the substrate support 12 is provided on the back surface side of the wafer 111 supported by the substrate support pins 13, and is a substrate mounting surface that is parallel to the back surface of the wafer 111 and faces the back surface of the wafer 111. It has a surface.
A substrate support unit is configured by the substrate support pins 13 and the substrate support 12.

  The substrate support 12 is supported by a rotating shaft 31 made of metal such as stainless steel (SUS), and the rotating shaft 31 is rotated in the horizontal direction by a rotation drive unit 32. Therefore, the rotation drive unit 32 can rotate the rotation shaft 31, the substrate support 12, the substrate support pins 13, and the wafer 111 in the horizontal direction. Further, the rotation drive unit 32 is moved up and down in the vertical direction by a substrate support base lifting unit (not shown). Therefore, the rotation support unit 32, the rotation shaft 31, the substrate support table 12, the substrate support pins 13, and the wafer 111 can be moved up and down in the vertical direction by the substrate support table elevating unit. The rotation driving unit 32 and the substrate support base lifting unit are electrically connected to the control unit 40 and controlled by the control unit 40.

(Gas supply part)
A gas supply pipe 52 for introducing a gas such as nitrogen (N ₂ ), for example, is provided on the upper wall of the processing chamber 18 and on the upper wall of the processing chamber 110. The gas supply pipe 52 is provided with a gas supply source 55, a flow rate control device 54 for adjusting the gas flow rate, and a valve 53 for opening and closing the gas flow path in order from the upstream side. Gas is introduced into or stopped from the gas supply pipe 52 into the chamber 110. The introduced gas introduced from the gas supply pipe 52 is used to cool the wafer 111 or push out the gas in the processing chamber 110 as a purge gas.
A gas supply unit is configured by the gas supply source 55, the gas supply pipe 52, the flow control device 54, and the valve 53. The flow control device 54 and the valve 53 are electrically connected to the control unit 40 and are controlled by the control unit 40.

(Gas discharge part)
As shown in FIG. 4, for example, a gas discharge pipe 62 for exhausting the gas in the processing chamber 110 is provided on the side wall of the processing chamber 110 in the lower portion of the processing container 18 that is a rectangular parallelepiped. The gas discharge pipe 62 is provided with a pressure adjustment valve 63 and a vacuum pump 64 as an exhaust device in order from the upstream side, and the pressure in the processing chamber 110 is adjusted by adjusting the opening of the pressure adjustment valve 63. Is adjusted to a predetermined value.
The gas exhaust pipe 62, the pressure adjustment valve 63, and the vacuum pump 64 constitute a gas exhaust unit. The pressure adjustment valve 63 and the vacuum pump 64 are electrically connected to the control unit 40, and pressure adjustment control is performed by the control unit 40.

(Wafer transfer port)
As shown in FIG. 4, a wafer transfer port 71 for transferring the wafer 111 into and out of the process chamber 110 is provided in the side wall of the process chamber 110 below the process container 18. That is, the wafer transfer port 71 which is a substrate transfer port is provided on the wall of the processing container 18 below the position of the substrate support 12 in the processing chamber 110 during the substrate heating process. The wafer transfer port 71 is provided with a gate valve 72, and the gate valve 72 is opened by the gate valve driving unit 73 so that the processing chamber 110 communicates with the transfer chamber of the funro end module 20. Has been.
In the transfer chamber of the funro end module 20, a transfer robot 202 for transferring the wafer 111 is provided. The transfer robot 202 is provided with a transfer arm that supports the wafer 111 when the wafer 111 is transferred. The wafer 111 can be transferred between the processing chamber 110 and the transfer chamber by the transfer robot 202 by lowering the substrate support pins 13 and the substrate support table 12 to the substrate transfer position and opening the gate valve 72. It is configured as follows.

(Microwave passage suppression part)
In addition, a groove 17 constituting a microwave passage suppression unit is provided on the side wall of the processing container 18 at a position facing the side wall of the substrate support table 12 at the substrate processing position, and the side wall of the processing container 18 and the substrate support table 12. It is provided so that it may open with respect to the clearance gap 16 between these side walls. The groove 17 is for suppressing the microwave supplied from the waveguide port 22 from being transmitted into the space below the lower surface of the substrate support 12. In the present embodiment, the groove 17 is provided on the inner side (inner wall) of the wall of the processing container 18 continuously in the horizontal direction along the side wall of the substrate support table 12 so as to surround the substrate support table 12. It is also possible to provide discretely within a range where microwave propagation can be suppressed without being provided continuously in the horizontal direction. By providing the grooves discretely and periodically, the passage of microwaves can be effectively suppressed. Details of the groove 17 will be described later.

Thus, in the state of FIG. 4 in which the substrate support 12 is at the height of the substrate heating processing position, the inside of the processing chamber 110 is a space above the upper surface (substrate mounting surface) of the substrate support 12 to which microwaves are supplied. And an exhaust space 130 which is a space below the lower surface of the substrate support 12 to which microwaves are not supplied, that is, a non-process space 130 which is a space opposite to the substrate placement surface of the substrate support 12. The processing space 120 and the non-processing space 130 are connected via a gap 16 between the side wall of the processing container 18 and the side wall of the substrate support 12.
As described above, the gas supply unit supplies gas to the processing space 120, the microwave supply unit supplies microwave to the processing space 120, and the gas discharge unit discharges gas from the non-processing space 130. The wafer transfer port 71 is provided in the non-processing space 130, and the groove 17 is open to the gap 16 between the processing space 120 and the non-processing space 130.
Therefore, during the substrate heating process, the microwave supplied to the processing space 120 is suppressed from propagating to the non-processing space 130 by the grooves 17.

Rotation that supports the O-ring 74 provided between the gate valve 72 that opens and closes the wafer transfer port 71 and the processing container 18 and the substrate support 12 by suppressing the propagation of the microwave to the non-processing space 130. It can suppress that the O-ring provided in the drive part 32 grade | etc., Burns out with a microwave. Moreover, it can suppress that these O-rings deteriorate with a microwave and a particle | grains generate | occur | produce from the deteriorated O-ring.
Further, since the microwave can be confined in the processing space 120 above the substrate support 12, the substrate can be efficiently heat-treated without losing the microwave supplied to the processing space 120.

Next, the detail of the groove | channel 17 is demonstrated using FIG.
FIG. 5 is an enlarged view of the vicinity of the groove 17 in FIG. 4, and is an explanatory diagram of the microwave passage suppression unit according to the present embodiment. As shown in FIG. 5, the microwave passage suppression unit according to the present embodiment arranges two conductors (the substrate support 12 and the processing container 18) so that the gap 16 between them is extremely small. A groove 17 having a depth D (D = d1 + d2) is provided in one of the two conductors so as to open to the gap 16.
In the example of FIG. 5, the groove 17 is bent 90 degrees downward in the middle. However, when the processing container 18 is thick, the groove 17 may be formed in a straight line without bending. it can. Further, the groove 17 may be bent upward, and the bending angle can be appropriately selected other than 90 degrees. Further, the groove 17 can be formed not on the wall of the processing container 18 but on the side wall of the substrate support 12.

The microwave passage suppression unit of FIG. 5 can be represented by the equivalent circuit of FIG.
Z = jZ _C tan (2πD / λ)
Given in. Z _C is the characteristic impedance, lambda is the wavelength of the microwave. Therefore, if D = λ / 4, that is, if the depth of the groove 17 is ¼ of the wavelength of the microwave in the groove 17, Z becomes infinite, the open end of the groove 17 becomes an open end state, and processing The microwave propagating from the space 120 can be reflected.
In the example of FIG. 5, the depth of the groove for suppressing the microwave passage is ¼ of the wavelength of the microwave, but the wavelength in a range that can substantially suppress the microwave passage, that is, substantially If the wavelength is within a range that can suppress the burning of the O-ring and the generation of particles, the wavelength does not need to be exactly ¼ of the wavelength of the microwave, and may be about ¼ of the wavelength of the microwave. Further, since the microwave frequency band that can suppress the passage varies slightly depending on the width of the groove, the depth of the groove does not need to be exactly ¼ of the wavelength of the microwave. In this specification, approximately ¼ of the wavelength of the microwave means a wavelength in a range in which the microwave can be substantially suppressed.

Furthermore, in this embodiment, the groove 17 is filled with a dielectric such as quartz or alumina. When the relative dielectric constant of the dielectric of the filling material is ε _r , the dielectric constant in vacuum is ε ₀ , and the magnetic permeability is μ ₀ , the propagation speed of the microwave in the dielectric is 1 / (ε _r ε ₀ μ ₀ ) ^1/2 . That is, in the dielectric body, the propagation speed of the microwave is reduced to 1 / (ε _r ) ^1/2 and the wavelength is shortened at the same ratio as compared to the vacuum.
Therefore, by filling the groove 17 with a dielectric, the depth of the groove 17 can be reduced, that is, the processing vessel 18 can be downsized, and the substrate processing apparatus 1 can be downsized. For example, when the groove 17 is filled with quartz, the relative permittivity of quartz is approximately 4, so the depth of the groove 17 is halved compared to a hollow structure in which the groove 17 is not filled with a dielectric. can do.
Further, in the present embodiment, the substrate is processed at a pressure such that the plasma is not generated by the microwave, for example, atmospheric pressure. At such a high pressure, the particles that enter the groove 17 are transferred to the substrate. There is a risk of flying up into the processing chamber 110 during processing. These particles are mainly composed of by-products generated during the substrate processing process. For example, the gas generated from the substrate during heating is cooled by the inner wall of the processing container 18 and solidified into particles. However, in this embodiment, since the groove 17 is filled with a dielectric, particles can be prevented from entering and depositing in the groove 17.

  In this embodiment, as an example, quartz is embedded in the groove 17, the wavelength λ of the microwave is 51.7 mm (5.8 GHz), and the depth of the groove 17 is approximately λ / 4 D = 13 mm (d1 = 6 mm). D2 = 7 mm), the gap 16 is 2 mm, and the opening width of the groove 17 is a = 2 mm. As another example, the wavelength λ of the microwave is 129 mm (2.45 GHz), the depth of the groove 17 is approximately λ / 4, D = 30 mm (d1 = 8 mm, d2 = 22 mm), the gap 16 is 2 mm, The opening width of the groove 17 can be a = 2 mm.

  The substrate processing apparatus 1 includes a control unit 40 that controls the operation of each component of the substrate processing apparatus 1. The control unit 40 includes a microwave generation unit 23, a gate valve driving unit 73, a transfer robot 202, and a flow rate control device. 54, the operation of each component such as the valve 53, the pressure adjustment valve 63, and the rotation drive unit 32 is controlled.

(Details of microwave heating structure)
Next, the details of the microwave heating structure according to the present embodiment will be described.
The microwave introduced into the processing chamber 110 is repeatedly reflected on the wall surface of the processing chamber 110. Microwaves are reflected in various directions in the processing chamber 110, and the processing chamber 110 is filled with microwaves. The microwave hitting the wafer 111 in the processing chamber 110 is absorbed by the wafer 111, and the wafer 111 is dielectrically heated by the microwave. Further, the temperature of the wafer 111 is low when the microwave power is low, and the temperature is high when the power is high.

When the wafer 111 is processed, rapid heating can be performed by directly applying high-energy microwaves to the wafer 111. Our research shows that the substrate heating effect is higher when the wafer is processed with the reflected wave dominant and when the wafer is directly irradiated with microwaves. This is because, when the wafer 111 is directly irradiated with microwaves, the area directly irradiated with microwaves is a part of the wafer 111, and thus the energy density of the directly irradiated part is dominant in the reflected waves. Higher than Therefore, it is considered that the portion directly irradiated with the microwave tends to be locally hot.
However, when directly irradiating the wafer 111 with microwaves, the size of the waveguide 22 is smaller than the area of the wafer 111, and the microwave does not spread so much after being emitted from the waveguide 22; It is not easy to make the energy of the microwave irradiated to the surface of the substrate uniform.
Further, even if the wafer 111 is directly irradiated with microwaves, not all of the energy is absorbed by the wafer 111, and a part of the energy is reflected on the wafer surface or a part of the wafer 111 is transmitted. This becomes a reflected wave, and a standing wave is generated in the processing chamber 110. When a standing wave is generated in the processing chamber 110, a portion that is well heated in the wafer surface and a portion that is not heated so much are generated. This becomes a heating unevenness of the wafer 111, and becomes a cause of worsening the uniformity of the heating degree in the wafer surface.

  Therefore, in the present embodiment, the waveguide port 22 is provided on the upper wall of the processing chamber 110, and the distance between the waveguide port 22 and the surface of the wafer 111 supported by the substrate support pins 13 is supplied to the micro-channel supplied. The distance is shorter than one wavelength of the wave. In this example, the frequency of the microwave to be used is 5.8 GHz, and the distance is shorter than the wavelength of the microwave of 51.7 mm. It is considered that the direct wave emitted from the waveguide 22 is dominant in the range of the distance shorter than one wavelength from the waveguide 22. Here, “dominant” means a state where the density of the direct wave is higher than the density of the reflected wave. If it does as mentioned above, the direct wave directly radiated | emitted from the waveguide port 22 becomes dominant, and the microwave irradiated to the wafer 111 becomes dominant, and the influence of the standing wave in the process chamber 110 can be made relatively small. The wafer 111 in the vicinity of the waveguide port 22 can be rapidly heated. Furthermore, with respect to the region of the wafer 111 other than the region facing the waveguide port 22, it is possible to prevent thermal history due to heating from being accumulated in that region.

  Furthermore, in this embodiment, the distance between the waveguide 22 and the surface of the wafer 111 supported by the substrate support pins 13 is set to an odd multiple of a quarter wavelength (λ / 4) of the supplied microwave. And the distance. Specifically, the frequency of the microwave to be used is 5.8 GHz, and the distance of 1/4 of the microwave wavelength 51.7 mm is 12.9 mm. With such a configuration, the wafer 111 can be positioned at the peak position of the microwave irradiated from the waveguide port 22 (the position of the antinode of the waveform), so the heating efficiency of the wafer 111 is good.

However, as described above, “the distance between the waveguide 22 and the surface of the wafer 111 supported by the substrate support pins 13 is set to a distance shorter than one wavelength of the supplied microwave”, or “ If only a distance that is an odd multiple of a quarter wavelength of the supplied microwave is used, only a part of the wafer 111 in the vicinity of the waveguide port 22 is heated, and the uniformity within the wafer surface deteriorates. .
Therefore, in the present embodiment, the center position of the waveguide port 22 is fixed eccentrically from the center position of the wafer 111 supported by the substrate support pins 13, and the wafer in which the waveguide port 22 is supported by the substrate support pins 13. It faces part of the surface of 111. In this example, the diameter of the wafer 111 is 300 mm, and the distance from the center position of the waveguide 22 to the center position of the wafer 111 is 90 mm. In this way, the waveguide port 22 is decentered from the center position of the wafer 111, and the wafer 111 is rotated in the horizontal direction around the rotation axis 31 of the substrate support 12 by the rotation drive unit 32. The surface is scanned by the waveguide 22.
In other words, the rotation drive unit 32 changes the relative position of the substrate support unit in the horizontal direction with respect to the waveguide port 22. That is, the horizontal direction of the waveguide port 22 with respect to the wafer 111 supported by the substrate support pins 13 so that the waveguide port 22 intermittently faces a part of the surface of the wafer 111 supported by the substrate support pins 13. Vary the relative position in the direction.

  Thus, by rotating the waveguide port 22 eccentrically from the center position of the wafer 111, the wafer 111 can be heated more uniformly, and the target region in the wafer 111 can be rapidly and rapidly concentrated. Heat can be heated, and the heat history can be reduced in other regions. The reason is as follows. Of the wafer 111, the region directly below the waveguide 22 for supplying the microwave has the highest microwave energy and is heated well. In other regions, the microwave energy is relatively weak and is not easily heated. Accordingly, when attention is paid to a certain point of the rotating wafer 111, the heating is rapidly performed only when the wafer 111 is directly under the waveguide port 22, and it is difficult to be heated when the wafer 111 is removed from the rotating hole 111. Further, the portion other than the portion directly under the waveguide is cooled by a substrate support as will be described later. That is, the cooling efficiency is higher than the heating efficiency. As a result, the heat history due to the heating of the point is reduced.

  Further, as described above, the substrate support pins 13 are made of a low heat transfer material such as quartz, so that the heat of the wafer 111 can be prevented from escaping to the substrate support table 12 via the substrate support pins 13. Here, the low heat transfer means that the heat transfer is lower than at least the substrate support 12. Thereby, the wafer 111 can be heated uniformly. If the substrate support pins 13 are made of a material having high heat conductivity such as metal, the heat escape due to heat conduction from the wafer 111 to the substrate support pins 13 becomes larger. Since a low part appears locally, it becomes difficult to heat the wafer 111 uniformly.

Next, the distance between the substrate support and the substrate will be described.
Since the substrate support 12 is made of metal, ie, conductive, the microwave potential is zero on the substrate support 12. Therefore, if the wafer 111 is directly placed on the substrate support 12, the microwave electric field strength is weak. Therefore, in the present embodiment, the wafer 111 is placed at a position of a quarter wavelength (λ / 4) of microwaves or an odd multiple of λ / 4 from the surface (substrate placement surface) of the substrate support 12. To do. Since the electric field is strong at a position that is an odd multiple of λ / 4, the wafer 111 can be efficiently heated by microwaves.
Specifically, in this embodiment, for example, a microwave fixed at 5.8 GHz is used, and the wavelength of the microwave is 51.7 mm. Therefore, the height from the surface of the substrate support 12 to the wafer 111 is set to 12 It is set to be 9 mm. That is, the distance between the upper end of the substrate support pin 13 and the opposing surface of the substrate support 12 during the substrate heat treatment is set to be a quarter wavelength distance of the supplied microwave.

  With such a configuration, the wafer 111 can be positioned at the peak position of the microwave (the position of the antinode of the waveform), so that the heating efficiency of the wafer 111 is good. If the heating efficiency is good, it is considered that other films are also heated by heat conduction from the dielectric film of the wafer 111. However, the cooling unit has an area equal to or larger than the size of the wafer 111. By placing the built-in metal substrate support 12 at a position facing the back surface of the wafer 111, heat can be taken from the entire back surface of the wafer 111. As a result, the wafer 111 can be cooled uniformly, and heating of films other than the dielectric film on the wafer 111 can be suppressed.

A form in which the frequency of the microwave changes (varies) with time is also possible. In this case, the height from the surface of the substrate support 12 to the wafer 111 may be obtained from the wavelength of the representative frequency in the changing frequency band. For example, when changing from 5.8 GHz to 7.0 GHz, the representative frequency is set to the center frequency of the changing frequency band, and the height from the surface of the substrate support 12 to the wafer 111 is set to 11 from the wavelength 46 mm of the representative frequency 6.4 GHz. .5 mm.
Furthermore, a plurality of fixed frequency power supplies may be provided, and microwaves having different frequencies may be switched and supplied from each of them to be processed.

(Substrate cooling mechanism)
As shown in FIG. 4, in the present embodiment, a coolant flow path 37 through which a coolant for cooling the wafer 111 flows is provided in the substrate support table 12, and the substrate support table 12 functions as a substrate cooling table. To do. For example, water is used as the refrigerant, but another refrigerant such as a cooling chiller may be used as the refrigerant. The refrigerant flow path 37 is connected to the refrigerant supply pipe 36 that supplies the refrigerant to the refrigerant flow path 37 and the refrigerant discharge pipe 38 that discharges the refrigerant from the refrigerant flow path 37 outside the processing chamber 110. The refrigerant supply pipe 36 is provided with an open / close valve 33 that opens and closes the refrigerant supply pipe 36, a flow rate control device 34 that controls the refrigerant flow rate, and a refrigerant source 35 in order from the downstream. The on-off valve 33 and the flow rate control device 34 are electrically connected to the control unit 40 and controlled by the control unit 40.

(Details of substrate support and substrate support mechanism)
Next, the substrate support 12 and the surrounding structure will be described in detail with reference to FIGS. 7 and 8. FIG. 7 is a cross-sectional view of the substrate support base and the substrate support base support mechanism according to the present embodiment as viewed from the side. FIG. 8 is a partially enlarged view of FIG. 7. As shown in FIG. 7, the substrate support 12 is provided with a coolant channel 37. The refrigerant flow path 37 is stretched over the entire substrate support 12 and can cool the substrate uniformly. For example, Galden (registered trademark) HT200 is used as the refrigerant.

  The shaft 402 constituting the rotating shaft 31 is a support portion that supports the substrate support 12. The shaft 402 includes a refrigerant (coolant) flow path, and this refrigerant flow path causes the refrigerant to be supplied to the refrigerant flow path 37 of the substrate support 12 to flow and the refrigerant discharged from the refrigerant flow path 37 to flow. . The material of the shaft 402 is aluminum. The horizontal cross section of the shaft 402 is circular. As a refrigerant flow path included in the shaft 402, a first refrigerant supply path 408 that supplies the refrigerant from the refrigerant supply / discharge section 417 to the refrigerant flow path 37, and a first refrigerant that flows the refrigerant discharged from the refrigerant flow path 37 A discharge path 409 is provided. As shown in FIG. 7, the first refrigerant supply path 408 and the second refrigerant discharge path 409 are provided in the shaft 402 so as to be parallel to and spaced apart from each other.

  Reference numeral 32 denotes a rotational drive unit that horizontally rotates the shaft 402 and is made of SUS (stainless steel). A side surface of the shaft 402 is covered with a hollow shaft 423. The hollow shaft 423 sandwiches the shaft 402 and rotates horizontally together with the shaft 402, and protects the shaft 402 from friction during rotation. The material of the hollow shaft 423 is SUS. An O-ring 405 is provided between the shaft 402 and the hollow shaft 423. The O-ring 405 prevents the shaft 402 from wobbling and prevents gas leakage from the processing chamber 110. The rotary drive unit 32 includes a magnetic fluid seal 420 as a vacuum seal, a bearing 421, and a motor 422 on the side in contact with the hollow shaft 423. The rotational movement of the motor 422 is transmitted to the hollow shaft 423, and the shaft 402 rotates horizontally.

  A flange 32 a provided in the casing of the rotation drive unit 32 is fixed to the bottom of the processing container 18. The O-ring 407 prevents gas from leaking from the inside of the processing chamber 110.

  As shown in FIG. 8, the lower end of the shaft 402 is inserted into the shaft receiving portion 411. A fixing ring 416 is provided on the upper side of the shaft receiving portion 411, and a pressing ring 410 is provided on the upper side of the fixing ring 416. The shaft receiving portion 411, the fixing ring 416, and the pressing ring 410 constitute a connecting portion that connects the shaft 402 and the refrigerant supply / discharge portion 417, and rotate horizontally together with the shaft 402.

As shown in FIG. 8, a refrigerant supply / discharge portion 417 is provided below the shaft receiving portion 411. When the shaft 402 rotates horizontally, the refrigerant supply / discharge unit 417 does not rotate horizontally and remains stationary.
The refrigerant supply / discharge unit 417 is made of SUS. The refrigerant supply / discharge unit 417 has a rotor built in the casing, supplies the refrigerant to the shaft 402 through the connecting part without leaking, and leaks the refrigerant from the shaft 402 through the connecting part. It discharges without doing. The refrigerant supply / discharge section 417 is provided with a second refrigerant supply path 418 and a second refrigerant discharge path 419. The second refrigerant discharge path 419 is disposed concentrically with the second refrigerant supply path 418 so as to surround the second refrigerant supply path 418. That is, the second refrigerant supply path 418 is an inner shaft, and the second refrigerant discharge path 419 is an outer shaft provided so as to surround the inner shaft. As described above, the second refrigerant supply path 418 and the second refrigerant discharge path 419 constitute a double shaft. Since the shaft receiving portion 411 rotates horizontally around the double shaft, the coolant can be supplied from the inner shaft and discharged from the outer shaft even during rotation.

  As shown in FIG. 8, the leakage of the refrigerant is prevented by bringing the tip 402 a of the shaft 402 into contact with the O-ring 412. The first refrigerant supply path 408 of the shaft 402 and the second refrigerant supply path 418 of the refrigerant supply / discharge section 417 are connected so that the double pipes overlap, and the first refrigerant discharge path 409 of the shaft 402 and The second refrigerant discharge path 419 of the refrigerant supply / discharge section 417 is connected so that the double pipes overlap.

  The first refrigerant supply path 408 and the first refrigerant discharge path 409 of the shaft 402 are disposed so as to be parallel and spaced apart from each other. On the other hand, in the refrigerant supply / discharge section 417, the second refrigerant discharge path 419 is disposed concentrically with the second refrigerant supply path 418 so as to surround the second refrigerant supply path 418. As described above, the coolant flow path in the shaft 402 is not a double shaft structure, but is structured to be parallel and separated from each other, so that the shaft 402 can be easily manufactured.

  As shown in FIG. 8, a fixing ring 416 is provided on the upper surface of the shaft receiving portion 411. The fixing ring 416 is a ring shape (doughnut shape) having a thickness in the vertical direction, and is divided into two along the vertical direction so as to be substantially symmetrical. The split ring 416 divided into two is fitted into the side surface of the tip portion of the shaft 402 from the side surface direction. The fixing ring 416 is provided with a flange 416a which is a convex portion. The fixing ring 416 is fixed to the shaft 402 by connecting the fixing ring 416 divided in two with a horizontal bolt (not shown) in a state where the flange 416a is fitted in the recess on the side surface of the tip portion of the shaft 402. Is done. The shaft receiving portion 411 is fixed to the fixing ring 416 with a bolt or the like (not shown). With such a structure, the shaft receiving portion 411 rotates together with the shaft 402.

(Substrate processing operation)
Next, the substrate processing operation of this embodiment in the substrate processing apparatus 1 will be described. The substrate processing of this embodiment constitutes one process among a plurality of processes for manufacturing a semiconductor device. This substrate processing operation is controlled by the control unit 40. As described below, this substrate processing is performed in the order of a substrate carry-in process, a nitrogen gas replacement process, a heat treatment process, and a substrate carry-out process.

(Substrate loading process)
In the substrate loading process for loading the wafer 111 into the processing chamber 110, first, the gate valve 72 is opened to allow the processing chamber 110 and the front end module 20 to communicate with each other. Next, the substrate support 12 is lowered to the substrate transfer position below the substrate heating processing position, and the wafer 111 to be processed is transferred from the front end module 20 through the wafer transfer port 71 by the transfer robot 202 to the process chamber 110. Carry in. The wafer 111 carried into the processing chamber 110 is placed on the upper end of the substrate support pins 13 by the transfer robot 202 and supported by the substrate support pins 13. Next, the substrate support 12 is raised to the substrate heat treatment position. At this substrate heat treatment position, the side wall of the substrate support 12 faces the portion of the inner wall of the processing vessel 18 where the groove 17 is provided. Thereafter, when the transfer robot 202 returns from the processing chamber 110 to the front end module 20, the gate valve 72 is closed.

(Nitrogen gas replacement process)
Next, the inside of the processing chamber 110 is replaced with an inert gas atmosphere so that the wafer 111 is not adversely affected in the heat treatment process described later. In this example, nitrogen (N ₂ ) gas is used as the inert gas. The gas (atmosphere) in the processing chamber 110 is discharged from the gas discharge pipe 62 by the vacuum pump 64, and N ₂ gas is introduced into the processing chamber 110 from the gas supply pipe 52. At this time, the pressure in the processing chamber 110 is adjusted to a predetermined value, that is, the atmospheric pressure in this embodiment, by the pressure adjusting valve 63.

(Heat treatment process)
Next, the wafer 111 is rotated by the rotation driving unit 32, reaches a predetermined rotation number, and after the rotation number of the wafer 111 reaches a constant state, the microwave generated by the microwave generation unit 23 is guided. The wafer 22 is introduced into the processing chamber 110 from the opening 22, and the surface of the wafer 111 is irradiated for a predetermined time. If the microwave is introduced before the rotation of the wafer 111 or before the wafer 111 reaches a predetermined number of rotations, the intensity of the microwave irradiation varies depending on the location of the wafer 111. Therefore, the wafer 111 is heated uniformly. It is not preferable. Thus, by rotating the wafer 111, the wafer 111 can be heated more uniformly.
In the present embodiment, the groove 17 that suppresses the passage of microwaves is provided on the inner wall of the processing container 18 at a position facing the side wall of the substrate support 12, so that the processing space 120 above the substrate support 12. It is suppressed that the microwave supplied to the substrate leaks and passes from the processing space 120 to the non-processing space 130 below the substrate support 12.

The feature of heating by microwaves for dielectrics such as polyimide film is dielectric heating by dielectric constant ε and dielectric loss tangent tanδ. When materials with different physical properties are heated at the same time, materials that are easily heated, that is, dielectric constant and tanδ The material with the larger volume can be selectively heated.
In this way, by using the fact that a substance having a large product of dielectric constant and tan δ is heated rapidly, and other substances take a relatively long time to be heated, by irradiating a high-power microwave, Since the microwave irradiation time for performing desired heating on the dielectric can be shortened, the product of the dielectric constant and tan δ is increased by ending the microwave irradiation before the other substances are heated. Large materials can be selectively heated. In this way, a polyimide film having a product of dielectric constant and tan δ larger than that of silicon, which is the material of the wafer, can be selectively heated.

Therefore, in the present embodiment, the wafer surface on which the polyimide film is formed is irradiated with a strong direct energy wave to increase the heating difference between the polyimide film dielectric and the wafer. Further, the wafer 111 is rotated in order to suppress the temperature rise of the wafer 111. This is because, when viewed from the wafer surface, the time period in which the wave stays in the vicinity of the waveguide 22 is rapidly heated by the microwave, but when it is away from the vicinity of the wave guide 22, it is difficult to heat and the wafer temperature is lowered. . By doing in this way, the temperature rise of the whole wafer can be suppressed. More preferably, the temperature increase of the wafer 111 is suppressed by cooling the wafer 111 during the microwave irradiation. In order to cool the wafer 111, for example, the amount of N ₂ gas passing through the processing chamber 110 may be increased, or the coolant may be circulated through the coolant channel 37 in the substrate support 12.

Further, in the heat treatment step, the control unit 40 opens the valve 53 to introduce N ₂ gas into the processing chamber 110 from the gas supply pipe 52 and to set the pressure in the processing chamber 110 to a predetermined value by the pressure adjustment valve 63. In this embodiment, the N ₂ gas in the processing chamber 110 is discharged from the gas discharge pipe 62 while adjusting to atmospheric pressure. In this way, in the heat treatment step, the inside of the processing chamber 110 is maintained at a predetermined pressure value. In this example, the heat treatment was performed for 5 minutes by using a microwave with a frequency of 5.8 GHz as a power of 1600 W and a pressure in the treatment chamber 110 as an atmospheric pressure. At this time, the cooling of the wafer 111 can also be controlled by controlling the flow rate of an inert gas (for example, N ₂ gas) introduced into the processing chamber 110.
When the cooling effect of N ₂ gas is positively used, the gas supply pipe 52 is provided on the substrate support 12 and the gas is allowed to flow between the wafer 111 and the substrate support 12 to improve the cooling effect by the gas. You can also. By controlling the flow rate of this gas, the temperature of the wafer 111 can be controlled.
In this embodiment, N ₂ gas is used. However, if there is no problem in process and safety, another gas having a high heat transfer coefficient, for example, diluted He gas is added to the N ₂ gas to cool the substrate. The effect can also be improved.

  As described above, after introducing the microwave for a predetermined time and performing the substrate heat treatment, the introduction of the microwave is stopped. After the introduction of the microwave is stopped, the rotation of the wafer 111 is stopped. If the rotation of the wafer 111 is stopped before the introduction of the microwave is stopped, the microwave irradiation intensity varies depending on the region in the wafer 111, which is not preferable for uniformly heating the wafer 111.

(Substrate unloading process)
When the heat treatment process is completed, the substrate support 12 is lowered from the substrate heat treatment position to the substrate transfer position, and the heat-treated wafer 111 is removed from the process chamber 110 by a procedure reverse to the procedure shown in the substrate carry-in process described above. Unloading and unloading into the front end module 20.

According to the above-described embodiment, at least the following effects (1) to (5) can be obtained.
(1) A wafer transfer port is provided below the position of the substrate support table during the substrate heat treatment, a processing space to which microwaves are supplied is provided above the substrate support table, and microwaves are not supplied below the substrate support table. Since the processing space is used, it is possible to suppress burnout of the O-ring disposed at the wafer transfer port. In addition, the generation of particles due to microwave heating of the O-ring can be suppressed. In addition, since the microwave does not leak into the non-processing space and there is no loss, the substrate in the processing space can be efficiently heated.
(2) With the configuration of (1) above, it is possible to suppress burning of the O-ring disposed in the substrate support base support mechanism provided at the lower part of the substrate support base. Moreover, generation of particles due to microwave heating of the O-ring can be suppressed.
(3) Since a groove for suppressing the passage of microwaves is provided in the inner wall of the conductive processing container facing the side wall of the conductive substrate support table, the conductive film is conductive between the side wall of the substrate support table and the inner wall of the process container. Compared with the case where a conductive O-ring is used, the burning of the conductive O-ring and the generation of particles due to the conductive O-ring can be suppressed.
(4) Since the inside of the groove for suppressing passage of microwaves is filled with a dielectric, the depth of the groove can be made shallower and the substrate processing apparatus can be miniaturized compared to the case where the inside of the groove is not filled with a dielectric. Further, it is possible to prevent particles from entering and accumulating in the groove.
(5) Since the microwave passage suppressing groove is formed to be bent, the thickness of the processing container can be reduced and the substrate processing apparatus can be downsized compared to the case where the groove is formed in a straight line.

In addition, this invention is not limited to the above-mentioned embodiment, It cannot be overemphasized that it can change variously in the range which does not deviate from the summary.
Further, in the above-described embodiment, the microwave passage suppressing groove is provided on the inner wall of the processing container, but it may be provided on the side wall of the substrate support.
In the above-described embodiment, the substrate support pin is used as a member that directly supports the substrate. However, the substrate may be supported by a member other than the pin.
In the above embodiment, the heating of the polyimide film has been described. However, the present invention can also be applied to the heating of a high-k film (high dielectric constant film) such as a ZrO ₂ film.
In the above-described embodiment, the case where the wafer is processed has been described. However, the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

The present specification includes at least the following inventions. That is,
The first invention is
Forming a processing chamber for processing the substrate, and a processing container composed of conductive walls;
A conductive substrate support provided in the processing chamber and having a substrate mounting surface on the side on which the substrate is mounted and a side wall perpendicular to the substrate mounting surface;
A microwave supply unit that supplies a microwave to a processing space that is a space on the substrate placement surface side in the processing chamber during the substrate heat treatment;
A substrate transfer port provided on a wall of the processing container for forming a non-processing space that is a space opposite to the substrate mounting surface in the processing chamber during the substrate heat treatment, and for transferring the substrate to the outside of the processing chamber;
A microwave passage suppression groove that is provided on the side wall of the substrate support or the inner wall of the processing container facing the side wall and suppresses the microwave supplied to the processing space from passing to the non-processing space. When,
A substrate processing apparatus comprising:

The second invention is
A substrate processing apparatus according to a first invention,
A substrate processing apparatus in which a dielectric is embedded in the groove for suppressing microwave passage.

The third invention is
The substrate processing apparatus of the first invention or the second invention,
The substrate processing apparatus, wherein the depth of the groove is approximately ¼ of the wavelength of the microwave supplied from the microwave supply unit in the groove.

The fourth invention is:
The substrate processing apparatus of the second invention or the third invention,
A substrate processing apparatus, wherein the dielectric material is quartz.

The fifth invention is:
The substrate processing apparatus of the second invention or the third invention,
A substrate processing apparatus, wherein the dielectric material is alumina.

  DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus, 10 ... Process module (PM), 12 ... Substrate support stand, 13 ... Substrate support pin, 16 ... Gap, 17 ... Groove, 18 ... Processing container, 19 ... Leakage microwave, 20 ... Funroto end Module (EFEM), 21 ... waveguide, 22 ... waveguide port, 23 ... microwave generator, 30 ... load port (LP), 31 ... rotary shaft, 32 ... rotation drive, 33 ... open / close valve, 34 ... flow rate Control device, 35 ... refrigerant source, 36 ... refrigerant supply pipe, 37 ... refrigerant flow path, 38 ... refrigerant discharge pipe, 40 ... control section, 52 ... gas supply pipe, 53 ... open / close valve, 54 ... flow rate control device, 55 ... Gas supply source 62 ... Gas discharge pipe 63 ... Pressure adjusting valve 64 ... Vacuum pump 71 71Wafer transfer port 72 ... Gate valve 73 ... Gate valve drive unit 74 ... O-ring 100 ... Gate valve (GV) ) DESCRIPTION OF SYMBOLS 110 ... Processing chamber, 111 ... Wafer, 120 ... Processing space, 130 ... Exhaust space (non-processing space), 200 ... Substrate placing part, 201 ... Fan, 202 ... Transfer robot, 203 ... Stand, 204 ... Air flow, 205 DESCRIPTION OF SYMBOLS ... Robot support stand, 206 ... Exhaust pipe, 207 ... Gas discharge valve, 208 ... Pump, 300 ... Shutter, 301 ... Pod, 402 ... Shaft, 405 ... O-ring, 407 ... O-ring, 408 ... First refrigerant supply 409 ... first refrigerant discharge path, 410 ... pressing ring, 411 ... shaft receiving section, 412 ... O-ring, 416 ... fixing ring, 417 ... refrigerant supply / discharge section, 418 ... second refrigerant supply path, 419 ... second refrigerant discharge path, 420 ... vacuum seal, 421 ... bearing, 422 ... motor, 423 ... hollow shaft.

Claims (2)

Forming a processing chamber for processing the substrate, and a processing container composed of conductive walls;
A conductive substrate support provided in the processing chamber and having a substrate mounting surface on the side on which the substrate is mounted and a side wall perpendicular to the substrate mounting surface;
A microwave supply unit that supplies a microwave to a processing space that is a space on the substrate placement surface side in the processing chamber during the substrate heat treatment;
A substrate transfer port provided on a wall of the processing container for forming a non-processing space that is a space opposite to the substrate mounting surface in the processing chamber during the substrate heat treatment, and for transferring the substrate to the outside of the processing chamber;
A microwave passage suppression groove that is provided on the side wall of the substrate support or the inner wall of the processing container facing the side wall and suppresses the microwave supplied to the processing space from passing to the non-processing space. When,
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
A substrate processing apparatus in which a dielectric is embedded in the groove for suppressing microwave passage.

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