TW202046521A - Wavelength conversion member and method for manufacturing same, and light emission device - Google Patents

Wavelength conversion member and method for manufacturing same, and light emission device Download PDF

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TW202046521A
TW202046521A TW109108586A TW109108586A TW202046521A TW 202046521 A TW202046521 A TW 202046521A TW 109108586 A TW109108586 A TW 109108586A TW 109108586 A TW109108586 A TW 109108586A TW 202046521 A TW202046521 A TW 202046521A
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wavelength conversion
phosphor
conversion member
layer
powder
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清水寛之
浅野秀樹
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日商日本電氣硝子股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/06Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements

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Abstract

Provided are: a wavelength conversion member which rarely undergoes the decrease in a luminous flux value or the change in chromaticity after lighting; and a light emission device equipped with the wavelength conversion member. A wavelength conversion member 10 characterized by being provided with: a base material layer 1 which comprises a sintered product of a glass powder 1a; and a phosphor layer 2 which is formed on one main surface of the base material layer 1 and comprises a sintered product of a glass powder 2a and a phosphor powder 2b.

Description

波長轉換構件及其製造方法、以及發光裝置Wavelength conversion member, manufacturing method thereof, and light emitting device

本發明係關於一種將發光二極體(LED:Light Emitting Diode)或雷射二極體(LD:Laser Diode)等發出之光之波長轉換為其他波長之波長轉換構件及其製造方法、以及發光裝置。The present invention relates to a wavelength conversion member that converts the wavelength of light emitted by a light emitting diode (LED: Light Emitting Diode) or a laser diode (LD: Laser Diode) into other wavelengths, and a manufacturing method thereof, and a light emitting diode Device.

近年來,作為轉變為螢光燈或白熾燈之下一代之發光裝置,對使用LED或LD之發光裝置等之關注不斷高漲。作為此種下一代之發光裝置之一例,揭示有將出射藍色光之LED、與吸收來自LED之光之一部分而轉換為黃色光之波長轉換構件組合而成之發光裝置。該發光裝置發出作為自LED出射之藍色光、與自波長轉換構件出射之黃色光之合成光之白色光。於專利文獻1中,作為波長轉換構件之一例,提出有於玻璃基質中分散有無機螢光體粉末之波長轉換構件。 [先前技術文獻] [專利文獻]In recent years, as the next generation of light-emitting devices transformed into fluorescent lamps or incandescent lamps, there has been increasing interest in light-emitting devices using LEDs or LDs. As an example of such a next-generation light-emitting device, a light-emitting device combining an LED emitting blue light and a wavelength conversion member that absorbs part of the light from the LED and converts it into yellow light is disclosed. The light emitting device emits white light which is a composite light of blue light emitted from the LED and yellow light emitted from the wavelength conversion member. In Patent Document 1, as an example of the wavelength conversion member, a wavelength conversion member in which inorganic phosphor powder is dispersed in a glass matrix is proposed. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2003-258308號公報[Patent Document 1] Japanese Patent Laid-Open No. 2003-258308

[發明所欲解決之問題][The problem to be solved by the invention]

於上述之發光裝置中,於點亮後,有光通量值(光束值)經時地降低,或色度發生變化之傾向,存在無法獲得所需之光通量值或色度之問題。In the above-mentioned light-emitting device, after lighting, there is a tendency for the luminous flux value (beam value) to decrease over time, or the chromaticity changes, and there is a problem that the required luminous flux value or chromaticity cannot be obtained.

因此,本發明之目的在於提出一種於點亮後不易產生光通量值之降低、或色度之變化之波長轉換構件、及使用其之發光裝置。 [解決問題之技術手段]Therefore, the object of the present invention is to provide a wavelength conversion member that is less likely to cause a decrease in luminous flux value or a change in chromaticity after lighting, and a light emitting device using the same. [Technical means to solve the problem]

本發明之波長轉換構件之特徵在於具備:包含玻璃粉末之燒結體之基材層、及形成於基材層之一主面且包含玻璃粉末與螢光體粉末之燒結體之螢光體層。藉由設為此種構成,可抑制點亮後之光通量值之降低、或色度之變化。該機制可如下般進行說明。The wavelength conversion member of the present invention is characterized by comprising a base layer containing a sintered body of glass powder, and a phosphor layer formed on one main surface of the base layer and containing the sintered body of glass powder and phosphor powder. By adopting such a configuration, it is possible to suppress a decrease in the luminous flux value after lighting or a change in chromaticity. The mechanism can be explained as follows.

先前之波長轉換構件具有螢光體均勻地分散於構件整體之構造。此處,作為螢光體之分散介質之玻璃等基質之導熱性相對低,故而由螢光體之發光所產生之熱難以傳導至基質中,熱難以向構件外部釋出。其結果為,波長轉換構件之溫度成為高溫,因螢光體之溫度消光之作用而使光通量值變得容易降低。若螢光之光通量值降低,則波長轉換構件之出射光(螢光與透射激發光之合成光)中之螢光成分之光通量值降低(換言之,透射激發光之光通量值相對於螢光之光通量值變得相對大),故而出射光之色度發生變化。The previous wavelength conversion component has a structure in which phosphors are uniformly dispersed throughout the component. Here, the thermal conductivity of the matrix such as glass, which is the dispersion medium of the phosphor, is relatively low. Therefore, the heat generated by the light emission of the phosphor is difficult to conduct into the matrix, and the heat is difficult to release to the outside of the member. As a result, the temperature of the wavelength conversion member becomes a high temperature, and the luminous flux value easily decreases due to the effect of the temperature extinction of the phosphor. If the luminous flux value of fluorescent light decreases, the luminous flux value of the fluorescent component in the emitted light of the wavelength conversion member (combined light of fluorescent light and transmitted excitation light) decreases (in other words, the luminous flux value of transmitted excitation light is relative to the luminous flux of fluorescent light Value becomes relatively large), so the chromaticity of the emitted light changes.

另一方面,本發明之波長轉換構件具有於基材層之表面形成有螢光體層之構造,故而可一面保持構件本身之機械強度,一面提高螢光體層中之螢光體濃度,而使螢光體層部分薄型化。如此,可降低螢光體層中所占之基質之體積,提高螢光體層之導熱率,故而可使由螢光體所產生之熱高效率地向外部釋出。其結果為,可有效地抑制螢光體之溫度消光,抑制經時之光通量值之降低。又,本發明之波長轉換構件之基材層與螢光體層均包含含有玻璃粉末之燒結體,故而亦有兩者之密接性或結合強度優異,構件整體之機械強度優異之特徵。On the other hand, the wavelength conversion member of the present invention has a structure in which a phosphor layer is formed on the surface of the substrate layer. Therefore, it can maintain the mechanical strength of the member itself while increasing the phosphor concentration in the phosphor layer, thereby making the phosphor The light body layer is partially thinned. In this way, the volume of the matrix occupied in the phosphor layer can be reduced, and the thermal conductivity of the phosphor layer can be increased, so that the heat generated by the phosphor can be efficiently released to the outside. As a result, the temperature extinction of the phosphor can be effectively suppressed, and the decrease of the luminous flux value over time can be suppressed. In addition, the substrate layer and the phosphor layer of the wavelength conversion member of the present invention both contain a sintered body containing glass powder, and therefore have excellent adhesion or bonding strength between the two, and excellent mechanical strength of the entire member.

本發明之波長轉換構件較佳為基材層之厚度大於螢光體層之厚度。如此,可一面維持波長轉換構件之機械強度,一面容易地使螢光體層薄型化,從而謀求螢光體濃度之提高。In the wavelength conversion member of the present invention, it is preferable that the thickness of the substrate layer is greater than the thickness of the phosphor layer. In this way, it is possible to easily reduce the thickness of the phosphor layer while maintaining the mechanical strength of the wavelength conversion member, thereby achieving an increase in the phosphor concentration.

本發明之波長轉換構件較佳為基材層之厚度為螢光體層之厚度之1.1~10倍。In the wavelength conversion member of the present invention, the thickness of the substrate layer is preferably 1.1 to 10 times the thickness of the phosphor layer.

本發明之波長轉換構件較佳為基材層之厚度為45~900 μm。The wavelength conversion member of the present invention preferably has a thickness of the base layer of 45-900 μm.

本發明之波長轉換構件較佳為螢光體層之厚度為5~100 μm。In the wavelength conversion member of the present invention, the thickness of the phosphor layer is preferably 5-100 μm.

本發明之波長轉換構件較佳為螢光體層中之螢光體粉末之含量為1~80體積%。In the wavelength conversion member of the present invention, the content of the phosphor powder in the phosphor layer is preferably 1 to 80% by volume.

本發明之波長轉換構件較佳為螢光體粉末為石榴石系螢光體。In the wavelength conversion member of the present invention, it is preferable that the phosphor powder is a garnet-based phosphor.

本發明之波長轉換構件較佳為螢光體粉末之平均粒徑為1~50 μm。The wavelength conversion member of the present invention preferably has a phosphor powder with an average particle size of 1-50 μm.

本發明之波長轉換構件較佳為基材層中之玻璃粉末、與螢光體層中之玻璃粉末具有實質上相同之組成。如此,可消除基材層中之玻璃與螢光體層中之玻璃之折射率差,故而可降低兩者之界面之反射損失。其結果為,可提高波長轉換構件之發光強度。The wavelength conversion member of the present invention is preferably the glass powder in the substrate layer, which has substantially the same composition as the glass powder in the phosphor layer. In this way, the refractive index difference between the glass in the substrate layer and the glass in the phosphor layer can be eliminated, so the reflection loss at the interface between the two can be reduced. As a result, the emission intensity of the wavelength conversion member can be increased.

本發明之波長轉換構件之基材層及/或螢光體層亦可包含填料粉末。如此,可使基材層與螢光體層之熱膨脹係數容易地匹配,可抑制因熱膨脹係數差導致之構件之翹曲或龜裂等之產生。又,藉由填料粉末之光散射效果,可提高波長轉換構件之發光強度。進而,藉由含有高導熱率之填料粉末,可提高波長轉換構件之散熱效率。The base material layer and/or the phosphor layer of the wavelength conversion member of the present invention may also contain filler powder. In this way, the thermal expansion coefficients of the substrate layer and the phosphor layer can be easily matched, and the warpage or cracks of the member caused by the difference in the thermal expansion coefficient can be suppressed. In addition, the light scattering effect of the filler powder can increase the luminous intensity of the wavelength conversion member. Furthermore, by containing filler powder with high thermal conductivity, the heat dissipation efficiency of the wavelength conversion member can be improved.

波長轉換構件之製造方法係用於製作上述之波長轉換構件者,其特徵在於具備以下步驟:(a)準備包含玻璃粉末之基材層用坯片、及包含玻璃粉末及螢光體粉末之螢光體層用坯片;(b)藉由於複數個基材層用坯片之間夾持螢光體層用坯片而獲得坯片積層體;(c)藉由將坯片積層體進行焙燒,而獲得於包含玻璃粉末之燒結體之兩個基材層之間夾持包含玻璃粉末及螢光體粉末之燒結體之螢光體層而成之燒結積層體;及(d)將燒結積層體中之基材層中之一者去除。若將材料不同之兩種坯片積層並進行焙燒,則因各材料之熱膨脹係數差而導致收縮量之不同,從而容易產生翹曲或龜裂。另一方面,藉由如本發明之製造方法般於複數個(例如兩片)基材層用坯片之間夾持有螢光體層用坯片之狀態下進行焙燒,可取得構件整體之應力之平衡,故而不易產生焙燒時之翹曲或龜裂。再者,於焙燒後之燒結積層體中,亦存在於基材層與螢光體層之界面因兩者之熱膨脹係數差而殘存應力之可能性,但燒結積層體本身之機械強度相對高,故而即便藉由研削等後加工將基材層中之一者去除,亦不易因此產生翹曲或龜裂等。The manufacturing method of the wavelength conversion member is used to manufacture the above-mentioned wavelength conversion member, and is characterized by having the following steps: (a) preparing a blank for a substrate layer containing glass powder, and a phosphor containing glass powder and phosphor powder The green sheet for the light body layer; (b) the green sheet laminate is obtained by sandwiching the green sheet for the phosphor layer between a plurality of green sheets for the base material layer; (c) the green sheet laminate is fired, and Obtain a sintered laminated body formed by sandwiching a phosphor layer of a sintered body of glass powder and phosphor powder between two substrate layers of a sintered body of glass powder; and (d) sintering the laminated body One of the substrate layers is removed. If two kinds of green sheets with different materials are laminated and fired, the difference in the amount of shrinkage due to the difference in the coefficient of thermal expansion of each material may cause warpage or cracking. On the other hand, by firing in a state where the phosphor layer green sheet is sandwiched between a plurality of (for example, two) substrate layer green sheets as in the manufacturing method of the present invention, the stress of the entire component can be obtained. It is balanced, so it is not easy to warp or crack during baking. Furthermore, in the sintered laminate after firing, there is also the possibility of residual stress at the interface between the base layer and the phosphor layer due to the difference in thermal expansion coefficient between the two, but the sintered laminate itself has relatively high mechanical strength, so Even if one of the substrate layers is removed by post-processing such as grinding, it is not easy to cause warpage or cracks.

本發明之發光裝置之特徵在於具備:上述之波長轉換構件、及對波長轉換構件照射螢光體粉末之激發光之光源。The light-emitting device of the present invention is characterized by having the above-mentioned wavelength conversion member and a light source for irradiating the wavelength conversion member with excitation light of phosphor powder.

本發明之發光裝置較佳為以使螢光體層與光源對向之方式配置波長轉換構件。尤其較佳為螢光體層直接或介以接著劑層與光源相接。例如,於作為光源之LED等半導體元件中,可使用藍寶石等導熱性優異之構件作為光出射面。因此,若將螢光體層以直接或介以接著劑層與光源相接之方式配置,則可使螢光體層中產生之熱傳導至光源之構成構件,並向外部高效率地釋出。 [發明之效果]In the light-emitting device of the present invention, it is preferable to arrange the wavelength conversion member so that the phosphor layer and the light source face each other. It is particularly preferable that the phosphor layer is directly connected to the light source or via an adhesive layer. For example, in semiconductor elements such as LEDs as light sources, members with excellent thermal conductivity such as sapphire can be used as the light-emitting surface. Therefore, if the phosphor layer is arranged in such a way that it is connected to the light source directly or through an adhesive layer, the heat generated in the phosphor layer can be conducted to the constituent members of the light source and be efficiently released to the outside. [Effects of Invention]

根據本發明,可提供於點亮後不易產光通量值之降低、或色度之變化之波長轉換構件、及使用其之發光裝置。According to the present invention, it is possible to provide a wavelength conversion member that does not easily produce a decrease in luminous flux value or a change in chromaticity after lighting, and a light emitting device using the same.

以下,對較佳之實施形態進行說明。然而,以下之實施形態僅為例示,本發明並不限於以下之實施形態。又,於各圖式中,具有實質上相同之功能之構件有時以相同之符號作為參照。Hereinafter, preferred embodiments will be described. However, the following embodiments are only examples, and the present invention is not limited to the following embodiments. In addition, in each drawing, components with substantially the same function are sometimes referred to by the same symbols.

圖1係表示本發明之一實施形態之波長轉換構件之模式性剖視圖。波長轉換構件10具備基材層1與螢光體層2。螢光體層2係形成於基材層1之一主面。基材層1包含玻璃粉末1a之燒結體。另一方面,螢光體層2包含玻璃粉末2a與螢光體粉末2b之燒結體。波長轉換構件10之平面形狀並無特別限定,例如為正方形等矩形或圓形。以下,對每個構成要素詳細地說明。Fig. 1 is a schematic cross-sectional view showing a wavelength conversion member according to an embodiment of the present invention. The wavelength conversion member 10 includes a base layer 1 and a phosphor layer 2. The phosphor layer 2 is formed on one main surface of the base layer 1. The base material layer 1 contains a sintered body of glass powder 1a. On the other hand, the phosphor layer 2 contains a sintered body of glass powder 2a and phosphor powder 2b. The planar shape of the wavelength conversion member 10 is not particularly limited, and is, for example, a rectangle such as a square or a circle. Hereinafter, each component is explained in detail.

(基材層) 作為構成基材層1之玻璃粉末1a,可使用硼矽酸鹽系玻璃、磷酸鹽系玻璃、錫磷酸鹽系玻璃、鉍酸鹽系玻璃、亞碲酸鹽系玻璃等。作為硼矽酸鹽系玻璃,可列舉:以質量%計含有SiO2 30~85%、Al2 O3 0~30%、B2 O3 0~50%、Li2 O+Na2 O+K2 O 0~10%、及、MgO+CaO+SrO+BaO 0~50%者。作為錫磷酸鹽系玻璃,可列舉:以莫耳%計含有SnO 30~90%、P2 O5 1~70%者。作為亞碲酸鹽系玻璃,可列舉:以莫耳%計含有TeO2 50%以上、ZnO 0~45%、RO(R為選自Ca、Sr及Ba中之至少一種)0~50%、及、La2 O3 +Gd2 O3 +Y2 O3 0~50%者。(Substrate layer) As the glass powder 1a constituting the substrate layer 1, borosilicate glass, phosphate glass, tin phosphate glass, bismuthate glass, tellurite glass, etc. can be used. Examples of borosilicate glass include: SiO 2 30 to 85%, Al 2 O 3 0 to 30%, B 2 O 3 0 to 50%, Li 2 O+Na 2 O+K 2 O 0~ 10%, and, MgO+CaO+SrO+BaO 0~50%. Examples of tin phosphate-based glasses include those containing 30 to 90% of SnO and 1 to 70% of P 2 O 5 in mole %. Examples of tellurite-based glasses include: TeO 2 containing 50% or more, ZnO 0-45%, RO (R is at least one selected from Ca, Sr and Ba) 0-50% in molar %, And, La 2 O 3 +Gd 2 O 3 +Y 2 O 3 0~50%.

玻璃粉末1a之軟化點較佳為250℃~1000℃,更佳為300℃~950℃,進而較佳為500℃~900℃之範圍內。若玻璃粉末1a之軟化點過低,則有波長轉換構件10之機械強度或化學耐久性降低之情形。又,由於玻璃粉末1a本身之耐熱性較低,故而有因螢光體所產生之熱而導致軟化變形之虞。另一方面,若玻璃粉末1a之軟化點過高,則於下述之製造時之焙燒步驟中,有螢光體粉末2b劣化而波長轉換構件10之發光強度降低之情形。再者,就提高波長轉換構件10之化學穩定性及機械強度之觀點而言,玻璃粉末1a之軟化點較佳為500℃以上、600℃以上、700℃以上、800℃以上,尤佳為850℃以上。作為此種玻璃,可列舉:硼矽酸鹽系玻璃。然而,若玻璃粉末1a之軟化點升高,則焙燒溫度亦升高,其結果為,有製造成本升高之傾向。因此,就低價地製造波長轉換構件10之觀點而言,玻璃粉末1a之軟化點較佳為550℃以下、530℃以下、500℃以下、480℃以下,尤佳為460℃以下。作為此種玻璃,可列舉:錫磷酸鹽系玻璃、鉍酸鹽系玻璃、亞碲酸鹽系玻璃。The softening point of the glass powder 1a is preferably 250°C to 1000°C, more preferably 300°C to 950°C, and even more preferably 500°C to 900°C. If the softening point of the glass powder 1a is too low, the mechanical strength or chemical durability of the wavelength conversion member 10 may decrease. In addition, since the glass powder 1a itself has low heat resistance, there is a risk of softening and deformation due to heat generated by the phosphor. On the other hand, if the softening point of the glass powder 1a is too high, the phosphor powder 2b may deteriorate and the luminous intensity of the wavelength conversion member 10 may decrease in the firing step during the production described below. Furthermore, from the viewpoint of improving the chemical stability and mechanical strength of the wavelength conversion member 10, the softening point of the glass powder 1a is preferably 500°C or higher, 600°C or higher, 700°C or higher, 800°C or higher, and more preferably 850°C. ℃ above. Examples of such glass include borosilicate glass. However, if the softening point of the glass powder 1a increases, the firing temperature also increases, and as a result, the manufacturing cost tends to increase. Therefore, from the viewpoint of inexpensively manufacturing the wavelength conversion member 10, the softening point of the glass powder 1a is preferably 550°C or lower, 530°C or lower, 500°C or lower, and 480°C or lower, and particularly preferably 460°C or lower. Examples of such glasses include tin phosphate-based glass, bismuthate-based glass, and tellurite-based glass.

基材層1之厚度較佳為45~900 μm、50~500 μm、70~300 μm,尤佳為90~200 μm。若基材層1之厚度過小,則波長轉換構件10之機械強度容易降低。另一方面,若基材層1之厚度過大,則於基材層1之內部激發光或螢光被過量地吸收或散射,而波長轉換構件10之發光強度容易降低。The thickness of the substrate layer 1 is preferably 45-900 μm, 50-500 μm, 70-300 μm, and particularly preferably 90-200 μm. If the thickness of the substrate layer 1 is too small, the mechanical strength of the wavelength conversion member 10 is likely to decrease. On the other hand, if the thickness of the substrate layer 1 is too large, the excitation light or fluorescent light inside the substrate layer 1 is excessively absorbed or scattered, and the luminous intensity of the wavelength conversion member 10 is likely to decrease.

基材層1之厚度較佳為大於螢光體層2之厚度。具體而言,基材層1之厚度較佳為螢光體層2之厚度之1.1~10倍、1.2~7倍、1.5~6倍、1.8~5倍,尤佳為3~4倍。如此,可一面維持波長轉換構件10之機械強度,一面容易使螢光體層2薄型化,從而謀求螢光體濃度之提高。The thickness of the substrate layer 1 is preferably greater than the thickness of the phosphor layer 2. Specifically, the thickness of the substrate layer 1 is preferably 1.1 to 10 times, 1.2 to 7 times, 1.5 to 6 times, 1.8 to 5 times, and particularly preferably 3 to 4 times the thickness of the phosphor layer 2. In this way, the mechanical strength of the wavelength conversion member 10 can be maintained, and the phosphor layer 2 can be easily made thinner, so that the phosphor concentration can be increased.

於本實施形態中,基材層1包含僅玻璃粉末1a之粉末燒結體,但並不限定於其。例如,於基材層1中,亦可為了調整熱膨脹係數或獲得光散射效果而含有填料粉末等其他無機粉末。如此,可使基材層1與螢光體層2之熱膨脹係數容易地匹配,可抑制因熱膨脹係數差導致之波長轉換構件10之翹曲或龜裂等之產生。又,藉由填料粉末之光散射效果,可提高波長轉換構件10之發光強度。進而,藉由含有高導熱率之填料粉末,可提高波長轉換構件10之散熱效率。作為填料粉末,可列舉:MgO、Al2 O3 、BN、AlN等。其中,MgO、Al2 O3 、BN於可見光範圍之透過率優異,故而較佳。In this embodiment, the base material layer 1 contains only the powder sintered body of the glass powder 1a, but it is not limited to this. For example, the base material layer 1 may contain other inorganic powders such as filler powder in order to adjust the thermal expansion coefficient or obtain a light scattering effect. In this way, the thermal expansion coefficient of the base material layer 1 and the phosphor layer 2 can be easily matched, and the generation of warpage or cracks of the wavelength conversion member 10 caused by the difference in the thermal expansion coefficient can be suppressed. In addition, the light scattering effect of the filler powder can increase the luminous intensity of the wavelength conversion member 10. Furthermore, by containing the filler powder with high thermal conductivity, the heat dissipation efficiency of the wavelength conversion member 10 can be improved. Examples of the filler powder include MgO, Al 2 O 3 , BN, AlN, and the like. Among them, MgO, Al 2 O 3 , and BN have excellent transmittance in the visible light range and are therefore preferable.

(螢光體層) 作為構成螢光體層2之玻璃粉末2a,可使用與作為上述之玻璃粉末1a所例示者相同者。此處,較佳為基材層1中之玻璃粉末1a與螢光體層2中之玻璃粉末2a之折射率差較小。例如,玻璃粉末1a與玻璃粉末2a之折射率(nd)之差較佳為0.2以下、0.1以下,尤佳為0.05以下,最佳為兩者之折射率相同。如此,可減小玻璃粉末1a之燒結體部分與玻璃粉末2a之燒結體部分之折射率差,故而可降低兩者之界面之反射損失。其結果為,可提高波長轉換構件10之發光強度。(Phosphor layer) As the glass powder 2a constituting the phosphor layer 2, the same as those exemplified as the above-mentioned glass powder 1a can be used. Here, it is preferable that the difference in refractive index between the glass powder 1a in the substrate layer 1 and the glass powder 2a in the phosphor layer 2 is small. For example, the difference between the refractive index (nd) of the glass powder 1a and the glass powder 2a is preferably 0.2 or less, 0.1 or less, more preferably 0.05 or less, and most preferably the same refractive index. In this way, the refractive index difference between the sintered body part of the glass powder 1a and the sintered body part of the glass powder 2a can be reduced, and therefore the reflection loss at the interface between the two can be reduced. As a result, the luminous intensity of the wavelength conversion member 10 can be increased.

又,如下所述,基材層1與螢光體層2係將基本地成為各層之原料之坯片進行積層並同時焙燒而製作,故而較佳為玻璃粉末1a與玻璃粉末2a之軟化點之差較小。例如,玻璃粉末1a與玻璃粉末2a之軟化點之差較佳為100℃以下、50℃以下、30℃以下,尤佳為10℃以下,最佳為兩者之軟化點相同。In addition, as described below, the base material layer 1 and the phosphor layer 2 are produced by laminating and firing green sheets that are basically the raw materials of each layer. Therefore, the difference between the softening points of the glass powder 1a and the glass powder 2a is preferable Smaller. For example, the difference between the softening points of the glass powder 1a and the glass powder 2a is preferably 100°C or less, 50°C or less, 30°C or less, more preferably 10°C or less, and most preferably the same softening point.

就以上之觀點而言,較佳為玻璃粉末1a與玻璃粉末2a具有實質上相同之組成。再者,所謂「具有實質上相同之組成」,係指關於玻璃組成中刻意含有之成分具有相同之組成,關於作為雜質不可避免地(具體而言以未達0.1莫耳%之等級)混入之成分,不作考慮。From the above viewpoint, it is preferable that the glass powder 1a and the glass powder 2a have substantially the same composition. Furthermore, the so-called "having substantially the same composition" means that the components deliberately contained in the glass composition have the same composition, and that it is unavoidably mixed as impurities (specifically, at a level of less than 0.1 mol%) The ingredients are not considered.

螢光體粉末2b只要為藉由激發光之入射而出射螢光者即可,並無特別限定。作為螢光體粉末2b之具體例,例如可列舉:選自氧化物螢光體粉末、氮化物螢光體粉末、氮氧化物螢光體粉末、氯化物螢光體粉末、氧氯化物螢光體粉末、硫化物螢光體粉末、氧硫化物螢光體粉末、鹵化物螢光體粉末、硫族元素化物螢光體粉末、鋁酸鹽螢光體粉末、鹵磷氧氯化物螢光體粉末及石榴石系化合物螢光體粉末中之一種以上等。其中,石榴石系螢光體之耐熱性優異,故而較佳。於使用藍色光作為激發光之情形時,例如可使用出射綠色光、黃色光或紅色光作為螢光之螢光體粉末。The phosphor powder 2b is not particularly limited as long as it emits fluorescence by the incidence of excitation light. Specific examples of the phosphor powder 2b include, for example, phosphor powder selected from oxide phosphor powder, nitride phosphor powder, oxynitride phosphor powder, chloride phosphor powder, oxychloride phosphor Powder, sulfide phosphor powder, oxysulfide phosphor powder, halide phosphor powder, chalcogenide phosphor powder, aluminate phosphor powder, halophosphorus oxychloride phosphor One or more of powder and garnet-based compound phosphor powder. Among them, garnet-based phosphors have excellent heat resistance and are therefore preferred. When blue light is used as the excitation light, for example, phosphor powder that emits green light, yellow light or red light as fluorescence can be used.

螢光體粉末2b之平均粒徑較佳為1~50 μm,更佳為5~25 μm。若螢光體粉末2b之平均粒徑過小,則有發光強度降低之情形。另一方面,若螢光體粉末2b之平均粒徑過大,則有發光色變得不均勻之情形。又,有螢光體層2之薄型化變得困難之傾向。The average particle diameter of the phosphor powder 2b is preferably 1-50 μm, more preferably 5-25 μm. If the average particle diameter of the phosphor powder 2b is too small, the luminous intensity may decrease. On the other hand, if the average particle size of the phosphor powder 2b is too large, the luminous color may become uneven. In addition, there is a tendency that thinning of the phosphor layer 2 becomes difficult.

作為螢光體層2中之螢光體粉末2b,亦可含有平均粒徑不同之複數種螢光體粉末。如此,藉由螢光體層2中之螢光體粉末2b之填充率提高,螢光體粉末2b間之接地點增加,而容易構築導熱路徑。其結果為,可提高波長轉換構件10之散熱效率。The phosphor powder 2b in the phosphor layer 2 may also contain a plurality of phosphor powders with different average particle diameters. In this way, as the filling rate of the phosphor powder 2b in the phosphor layer 2 is increased, the grounding points between the phosphor powder 2b are increased, and it is easy to construct a heat conduction path. As a result, the heat dissipation efficiency of the wavelength conversion member 10 can be improved.

螢光體層2中之螢光體粉末2b之含量(填充率)較佳為1~80體積%、10~78體積%、20~76體積%、30~74體積%,尤佳為40~72體積%。若螢光體粉末2b之含量過少,則為了獲得所需之發光色,必須增加螢光體層2之厚度,其結果為,有因螢光體層2之內部散射增加,而光提取效率降低之情形。另一方面,若螢光體粉末2b之含量過多,則螢光體層2之緻密性容易降低。其結果為,有因螢光體層2中之氣孔增多,內部散射增加,而光提取效率降低之情形。The content (filling rate) of the phosphor powder 2b in the phosphor layer 2 is preferably 1 to 80% by volume, 10 to 78% by volume, 20 to 76% by volume, 30 to 74% by volume, and particularly preferably 40 to 72 volume%. If the content of the phosphor powder 2b is too small, in order to obtain the desired luminous color, the thickness of the phosphor layer 2 must be increased. As a result, the internal scattering of the phosphor layer 2 may increase and the light extraction efficiency may decrease. . On the other hand, if the content of the phosphor powder 2b is too large, the compactness of the phosphor layer 2 is likely to decrease. As a result, the number of pores in the phosphor layer 2 may increase, and internal scattering may increase, and the light extraction efficiency may decrease.

螢光體層2之厚度較佳為5~100 μm、10~90 μm、15~80 μm,尤佳為20~70 μm。若螢光體層2之厚度過小,則有難以獲得充分之發光強度之情形。或者,為了獲得所需之發光色,必須增加螢光體粉末2b之含量,而螢光體層2之緻密性容易降低。另一方面,若螢光體層2之厚度過大,則有螢光體層2中之光之散射或吸收變得過大,而螢光或激發光之出射效率降低之情形。The thickness of the phosphor layer 2 is preferably 5 to 100 μm, 10 to 90 μm, 15 to 80 μm, and particularly preferably 20 to 70 μm. If the thickness of the phosphor layer 2 is too small, it may be difficult to obtain sufficient luminous intensity. Or, in order to obtain the desired luminous color, the content of the phosphor powder 2b must be increased, and the compactness of the phosphor layer 2 is liable to decrease. On the other hand, if the thickness of the phosphor layer 2 is too large, the scattering or absorption of light in the phosphor layer 2 may become too large, and the emission efficiency of fluorescent light or excitation light may decrease.

於本實施形態中,螢光體層2包含僅玻璃粉末2a及螢光體粉末2b之粉末燒結體,但並不限定於其。例如,與基材層1同樣地,為了調整熱膨脹係數或獲得光散射效果,亦可於螢光體層2中含有填料粉末等其他無機粉末。如此,可將基材層1與螢光體層2之熱膨脹係數容易地匹配,可抑制因熱膨脹係數差導致之波長轉換構件10之翹曲或龜裂等之產生。又,藉由填料粉末之光散射效果,可提高波長轉換構件10之發光強度。進而,藉由含有高導熱率之填料粉末,可提高波長轉換構件10之散熱效率。再者,可於僅基材層1及螢光體層2之任一者中含有填料粉末,亦可於兩者中含有填料粉末。In this embodiment, the phosphor layer 2 includes only the powder sintered body of the glass powder 2a and the phosphor powder 2b, but it is not limited to this. For example, similarly to the base layer 1, in order to adjust the thermal expansion coefficient or obtain a light scattering effect, the phosphor layer 2 may contain other inorganic powders such as filler powder. In this way, the thermal expansion coefficients of the base material layer 1 and the phosphor layer 2 can be easily matched, and the generation of warpage or cracks of the wavelength conversion member 10 due to the difference in thermal expansion coefficient can be suppressed. In addition, the light scattering effect of the filler powder can increase the luminous intensity of the wavelength conversion member 10. Furthermore, by containing the filler powder with high thermal conductivity, the heat dissipation efficiency of the wavelength conversion member 10 can be improved. In addition, the filler powder may be contained in only one of the base material layer 1 and the phosphor layer 2, or the filler powder may be contained in both.

(波長轉換構件之製造方法) 圖2係表示本發明之一實施形態之波長轉換構件之製造方法之模式圖。 首先,於步驟(a)中,以如下之方式準備包含玻璃粉末1a之基材層用坯片1'、及包含玻璃粉末2a及螢光體粉末2b之螢光體層用坯片2'。(Method of manufacturing wavelength conversion component) Fig. 2 is a schematic diagram showing a method of manufacturing a wavelength conversion member according to an embodiment of the present invention. First, in step (a), a green sheet 1'for a base material layer containing glass powder 1a and a green sheet 2'for a phosphor layer containing glass powder 2a and phosphor powder 2b are prepared as follows.

藉由於玻璃粉末1a中添加黏合劑樹脂或溶劑等有機成分並進行混練而製作漿料。藉由將所製作之漿料塗佈於支持基材上,使與支持基材隔開特定間隔所設置之刮刀於漿料上相對地移動,而製作基材層用坯片1'(刮刀法)。作為上述支持基材,例如可使用聚對苯二甲酸乙二酯等樹脂膜。A slurry is produced by adding organic components such as a binder resin or a solvent to the glass powder 1a and kneading it. By coating the prepared slurry on a supporting substrate, a doctor blade provided at a specific interval from the supporting substrate moves relative to the slurry to produce a green sheet 1'for the substrate layer (doctor blade method) ). As the supporting substrate, for example, a resin film such as polyethylene terephthalate can be used.

又,藉由於玻璃粉末2a及螢光體粉末2b之混合粉末中添加黏合劑樹脂或溶劑等有機成分並進行混練,而製作漿料。使用所獲得之漿料,藉由與上述相同之刮刀法而製作螢光體層用坯片2'。In addition, an organic component such as a binder resin or a solvent is added to the mixed powder of the glass powder 2a and the phosphor powder 2b and kneaded to prepare a slurry. Using the obtained slurry, a green sheet 2'for the phosphor layer was produced by the same doctor blade method as described above.

其次,於步驟(b)中,藉由於複數個基材層用坯片1'之間夾持螢光體層用坯片2'而獲得坯片積層體20'。此處,為了提高各層之密接性,較佳為於積層坯片之後,藉由加壓機進行加壓。再者,於本實施形態中,藉由於兩片基材層用坯片1'之間夾持1片螢光體層用坯片2'而製作坯片積層體20',但並不限定於此。例如,為了調整各層之厚度,亦可使基材層用坯片1'或螢光體層用坯片2'分別包含複數片坯片。Next, in the step (b), the green sheet laminate 20' is obtained by sandwiching the phosphor layer green sheet 2'between the plurality of base material layer green sheets 1'. Here, in order to improve the adhesiveness of each layer, it is preferable to pressurize the green sheets after the green sheets are laminated. Furthermore, in this embodiment, the green sheet laminate 20' is produced by sandwiching one green sheet 2'for the phosphor layer between two green sheets 1'for the base material layer, but it is not limited to this. . For example, in order to adjust the thickness of each layer, the green sheet 1'for the base material layer or the green sheet 2'for the phosphor layer may each include a plurality of green sheets.

繼而,於步驟(c)中,藉由將坯片積層體20'焙燒,而獲得於包含玻璃粉末1a之燒結體之兩個基材層1之間夾持包含玻璃粉末2a及螢光體粉末2b之燒結體之螢光體層2而成的燒結積層體20。通常坯片於焙燒時較大地收縮,故而若將材料不同之兩種坯片積層並焙燒,則因各材料之熱膨脹係數差而導致收縮量之不同,從而容易產生翹曲或龜裂。另一方面,於本實施形態中,藉由於兩片基材層用坯片1'之間夾持有螢光體層用坯片2'之狀態下進行焙燒,可取得構件整體之應力之平衡,故而不易產生焙燒時之翹曲或龜裂。Then, in step (c), by firing the green sheet laminate 20', it is obtained that the glass powder 2a and the phosphor powder are sandwiched between the two substrate layers 1 of the sintered body containing the glass powder 1a. 2b is a sintered layered body 20 made of the phosphor layer 2 of the sintered body. Generally, the green sheet shrinks greatly during firing. Therefore, if two kinds of green sheets with different materials are laminated and fired, the difference in the amount of shrinkage due to the difference in the coefficient of thermal expansion of each material may cause warpage or cracking. On the other hand, in this embodiment, by firing in a state where the phosphor layer green sheet 2'is sandwiched between the two substrate layer green sheets 1', the stress balance of the entire member can be achieved. Therefore, it is not easy to warp or crack during baking.

焙燒溫度較佳為玻璃粉末1a及玻璃粉末2a之軟化點±150℃以內,更佳為玻璃粉末1a及玻璃粉末2a之軟化點±100℃以內。若焙燒溫度過低,則有玻璃粉末1a及玻璃粉末2a不軟化流動,而無法獲得緻密之燒結體之情形。另一方面,若焙燒溫度過高,則有螢光體粉末2b劣化而使發光強度降低之虞。The firing temperature is preferably within ±150°C of the softening point of glass powder 1a and glass powder 2a, and more preferably within ±100°C of the softening point of glass powder 1a and glass powder 2a. If the firing temperature is too low, the glass powder 1a and the glass powder 2a may not soften and flow, and a dense sintered body may not be obtained. On the other hand, if the firing temperature is too high, the phosphor powder 2b may deteriorate and the luminous intensity may decrease.

最後,於步驟(d)中,藉由將燒結積層體20中之基材層1中之一者去除,而獲得波長轉換構件10。基材層1例如可藉由研磨或研削而去除。於焙燒後之燒結積層體20中,有於基材層1與螢光體層2之界面因兩者之熱膨脹係數差而殘存應力之可能性,但燒結積層體20本身之機械強度相對高,故而即便藉由研削等後加工將基材層1中之一者去除,亦不易因此產生翹曲或龜裂等。Finally, in step (d), the wavelength conversion member 10 is obtained by removing one of the base material layers 1 in the sintered laminate 20. The base material layer 1 can be removed by polishing or grinding, for example. In the sintered laminate 20 after firing, there is a possibility of residual stress at the interface between the base layer 1 and the phosphor layer 2 due to the difference in thermal expansion coefficient between the two. However, the mechanical strength of the sintered laminate 20 itself is relatively high, so Even if one of the base material layers 1 is removed by post-processing such as grinding, it is not easy to cause warpage or cracks.

再者,為了調整波長轉換構件10整體之厚度,或者為了調整波長轉換構件10之表面粗糙度,亦可對未去除之基材層1實施研磨或研削之加工。例如,於未去除之基材層1成為光出射面之情形時,基材層1之表面粗糙度較佳為0.01~0.25 μm、0.03~0.24 μm、0.05~0.23 μm,尤佳為0.06~0.22 μm。如此,激發光及螢光之光提取效率容易提高。Furthermore, in order to adjust the overall thickness of the wavelength conversion member 10, or to adjust the surface roughness of the wavelength conversion member 10, the unremoved base layer 1 may be subjected to grinding or grinding processing. For example, when the unremoved base layer 1 becomes the light-emitting surface, the surface roughness of the base layer 1 is preferably 0.01-0.25 μm, 0.03-0.24 μm, 0.05-0.23 μm, and particularly preferably 0.06-0.22 μm. In this way, the light extraction efficiency of excitation light and fluorescent light is easily improved.

(發光裝置) 圖3係表示使用本發明之一實施形態之波長轉換構件之發光裝置之模式性剖視圖。(Light-emitting device) 3 is a schematic cross-sectional view of a light emitting device using a wavelength conversion member according to an embodiment of the present invention.

發光裝置100具備基板3、光源4、波長轉換構件10及反射構件5。具體而言,於基板3上依序設置光源4及波長轉換構件10,使反射構件5覆蓋光源4及波長轉換構件10之周圍。藉由設為此種構成,而由光源4所產生之激發光於波長轉換構件10中之螢光體層2中進行波長轉換而成為螢光,與未經波長轉換之激發光一同通過基材層1並向外部釋出。The light emitting device 100 includes a substrate 3, a light source 4, a wavelength conversion member 10 and a reflection member 5. Specifically, the light source 4 and the wavelength conversion member 10 are sequentially arranged on the substrate 3 so that the reflection member 5 covers the periphery of the light source 4 and the wavelength conversion member 10. With this configuration, the excitation light generated by the light source 4 undergoes wavelength conversion in the phosphor layer 2 of the wavelength conversion member 10 to become fluorescent light, and passes through the substrate layer together with the excitation light without wavelength conversion 1 and release to the outside.

波長轉換構件10係以使螢光體層2側與光源4對向之方式設置。具體而言,波長轉換構件10係以螢光體層2與光源4相接之方式設置。或者,亦可以使螢光體層2介以未圖示之接著劑層與光源相接之方式設置。作為光源4,通常可使用LED或LD等半導體元件,但由於使用藍寶石等導熱性優異之構件作為該半導體元件之光出射面,故而若以與光源4直接或介以接著劑層相接之方式配置螢光體層2,則可使由螢光體層2所產生之熱傳導至光源4之構成構件,並向外部高效率地釋出。The wavelength conversion member 10 is installed so that the side of the phosphor layer 2 faces the light source 4. Specifically, the wavelength conversion member 10 is arranged in such a way that the phosphor layer 2 and the light source 4 are connected. Alternatively, the phosphor layer 2 may be provided in such a way that it is connected to the light source via an adhesive layer (not shown). As the light source 4, semiconductor elements such as LEDs or LDs can usually be used. However, since a member with excellent thermal conductivity such as sapphire is used as the light-emitting surface of the semiconductor element, if it is in direct contact with the light source 4 or through an adhesive layer The arrangement of the phosphor layer 2 allows the heat generated by the phosphor layer 2 to be conducted to the constituent members of the light source 4 and is efficiently released to the outside.

作為基板3,例如可使用高效率地反射自光源4發出之光線的白色之LTCC(Low Temperature Co-fired Ceramics,低溫共燒陶瓷)等。具體而言,可列舉:氧化鋁或氧化鈦、氧化鈮等無機粉末與玻璃粉末之燒結體。As the substrate 3, for example, white LTCC (Low Temperature Co-fired Ceramics) which efficiently reflects the light emitted from the light source 4 can be used. Specifically, a sintered body of inorganic powder such as alumina, titanium oxide, and niobium oxide and glass powder can be cited.

又,作為基板3,為了使自光源4發出之熱高效率地釋出,亦可使用導熱率較高之材料。尤其就耐熱性、耐候性優異之方面而言,較佳為使用包含陶瓷之基板等。具體而言,可列舉:氧化鋁或氮化鋁等陶瓷基板。In addition, as the substrate 3, in order to efficiently release the heat emitted from the light source 4, a material with higher thermal conductivity may be used. Especially in terms of excellent heat resistance and weather resistance, it is preferable to use a ceramic-containing substrate or the like. Specifically, ceramic substrates such as alumina and aluminum nitride can be cited.

亦可設為反射構件5用以反射光源4及自波長轉換構件10漏出之光。反射構件5例如可由包含氧化鈦等白色顏色之樹脂(高反射樹脂)形成。 [實施例]The reflective member 5 can also be used to reflect the light source 4 and the light leaking from the wavelength conversion member 10. The reflective member 5 may be formed of, for example, a resin (highly reflective resin) containing a white color such as titanium oxide. [Example]

以下,基於實施例詳細地說明本發明,但本發明並不限定於該實施例。Hereinafter, the present invention will be described in detail based on examples, but the present invention is not limited to these examples.

(實施例) (i)玻璃粉末之製作 以莫耳%計成為SiO2 61%、Al2 O3 4%、B2 O3 5%、CaO 16%、BaO 12%、ZnO 2%之玻璃組成之方式調製原料,使用鉑坩堝於1200~1700℃下進行1~2小時熔化而玻璃化。藉由使熔化玻璃流出至一對冷卻輥間而成形為膜狀。將所獲得之膜狀玻璃成形體利用球磨機粉碎後,進行分級而獲得平均粒徑D50 為2.5 μm之玻璃粉末(軟化點850℃,折射率(nd)1.58)。再者,軟化點係使用纖維伸長法,採用黏度成為107.6 dPa・s之溫度。(Example) (i) The glass powder is made into a glass composition of SiO 2 61%, Al 2 O 3 4%, B 2 O 3 5%, CaO 16%, BaO 12%, and ZnO 2% in terms of mole% In this way, the raw materials are prepared and melted and vitrified at 1200-1700°C for 1 to 2 hours using a platinum crucible. The molten glass flows out between a pair of cooling rolls to form a film. The obtained film-like glass molded body was pulverized by a ball mill, and then classified to obtain glass powder having an average particle diameter D 50 of 2.5 μm (softening point 850° C., refractive index (nd) 1.58). Furthermore, the softening point uses the fiber extension method, and the temperature at which the viscosity becomes 10 7.6 dPa·s.

(ii)基材層用坯片之製作 藉由於玻璃粉末中添加黏合劑樹脂(共榮社化學股份有限公司製造之OliCox)與塑化劑(互應化學工業股份有限公司製造之DOA)、分散劑(共榮社化學股份有限公司製造之FlowlenG-700)、有機溶劑(甲基乙基酮)進行混練,而獲得漿料狀之混合物。藉由利用刮刀法使所獲得之漿料狀混合物成形為片狀,於室溫下進行乾燥,而獲得厚度220 μm之基材層用坯片。(ii) Production of blanks for substrate layer By adding a binder resin (OliCox manufactured by Kyoeisha Chemical Co., Ltd.) and plasticizer (DOA manufactured by Huying Chemical Industry Co., Ltd.) and dispersant (manufactured by Kyoeisha Chemical Co., Ltd.) to the glass powder Flowlen G-700) and organic solvent (methyl ethyl ketone) are kneaded to obtain a slurry mixture. The obtained slurry-like mixture was formed into a sheet shape by a doctor blade method, and dried at room temperature to obtain a green sheet for a base material layer having a thickness of 220 μm.

(iii)螢光體層用坯片之製作 於玻璃粉末中混合螢光體粉末(Y3 Al5 O12 :Ce,平均粒徑D50 =15 μm),添加黏合劑樹脂(共榮社化學股份有限公司製造之OliCox)與塑化劑(互應化學工業股份有限公司製造之DOA)、分散劑(共榮社化學股份有限公司製造之FlowlenG-700)、有機溶劑(甲基乙基酮)進行混練,而獲得漿料狀之混合物。藉由利用刮刀法將所獲得之漿料狀混合物成形為片狀,於室溫下進行乾燥,而獲得厚度120 μm之螢光體層用之坯片。再者,螢光體粉末之添加量係以相對於玻璃粉末與螢光體粉末之合量成為60體積%之方式(於下述之特性評價試驗中,於照射激發光源時獲得白色光之螢光體濃度)進行調整。(iii) Preparation of the green sheet for the phosphor layer: Mix the phosphor powder (Y 3 Al 5 O 12 : Ce, average particle size D 50 = 15 μm) with the glass powder, and add a binder resin (Kyoeisha Chemical Co., Ltd.) OliCox manufactured by Co., Ltd.) and plasticizer (DOA manufactured by Huying Chemical Industry Co., Ltd.), dispersant (Flowlen G-700 manufactured by Kyoeisha Chemical Co., Ltd.), and organic solvent (methyl ethyl ketone) Kneading to obtain a slurry-like mixture. The obtained slurry mixture was formed into a sheet by a doctor blade method and dried at room temperature to obtain a green sheet for a phosphor layer with a thickness of 120 μm. Furthermore, the amount of phosphor powder added is such that the total amount of glass powder and phosphor powder becomes 60% by volume (in the characteristic evaluation test described below, white light is obtained when the excitation light source is irradiated. Light body density) to adjust.

再者,本實施例中之「白色光」係如下般定義。即,自CIE 1931 2-deg, x(_)、y(_)、z(_)配色函數將能量分佈光譜進行積分,求出三刺激值XYZ,於藉由該三刺激值XYZ算出色度x=X/(X+Y+Z)、色度y=Y/(X+Y+Z)時,該等值分別指成為x=0.33、y=0.33之色之光。Furthermore, the "white light" in this embodiment is defined as follows. That is, from the CIE 1931 2-deg, x(_), y(_), z(_) color matching function, the energy distribution spectrum is integrated to obtain the tristimulus value XYZ, and then the color degree is calculated by the tristimulus value XYZ When x=X/(X+Y+Z) and chromaticity y=Y/(X+Y+Z), these values refer to light that becomes x=0.33 and y=0.33, respectively.

(iv)波長轉換構件之製作 藉由將基材層用坯片與螢光體層用坯片切斷為特定之尺寸後,於兩片基材層用坯片之間夾持螢光體層用坯片,利用加壓機進行熱壓接而獲得坯片積層體。於電爐中對坯片積層體實施脫脂處理後,於真空氣體置換爐中,於玻璃粉末之軟化點附近實施真空焙燒。藉此,獲得於包含玻璃粉末之燒結體之兩個基材層之間夾持包含玻璃粉末及螢光體粉末之燒結體之螢光體層而成之燒結積層體。(iv) Fabrication of wavelength conversion components After cutting the green sheet for the base material layer and the green sheet for the phosphor layer to a specific size, the green sheet for the phosphor layer is sandwiched between the two green sheets for the base layer and heated by a press Press bonding to obtain a green sheet laminate. After debinding the green sheet laminate in an electric furnace, in a vacuum gas displacement furnace, vacuum firing is performed near the softening point of the glass powder. Thereby, a sintered laminate obtained by sandwiching the phosphor layer including the sintered body of glass powder and phosphor powder between the two substrate layers of the sintered body including glass powder is obtained.

藉由對燒結積層體實施研削加工,而將基材層中之一者去除。將剩餘之基材層與螢光體層拋光為鏡面狀態,藉此,獲得具備厚度90 μm之基材層、及形成於其一主面之厚度30 μm之螢光體層之波長轉換構件。By grinding the sintered layered body, one of the base material layers is removed. The remaining substrate layer and phosphor layer are polished to a mirror surface state, thereby obtaining a wavelength conversion member having a substrate layer with a thickness of 90 μm and a phosphor layer with a thickness of 30 μm formed on one main surface thereof.

(v)特性評價試驗 針對所獲得之波長轉換構件,以如下之方式測定總光通量值及色度之經時變化。(v) Characteristic evaluation test With respect to the obtained wavelength conversion member, the total luminous flux value and chromaticity change over time were measured in the following manner.

藉由使波長轉換構件藉由聚矽氧樹脂接著劑接著於激發波長450 nm之LED光源上,使LED光源及波長轉換構件之外周部被反射構件覆蓋,而獲得發光裝置。此處,波長轉換構件係以使螢光體層側與光源對向之方式配置。對該發光裝置施加1.0 A之直流電流而點亮光源。使自波長轉換構件發出之光被積分球內部吸收後,導光至根據標準光源所校正之分光器,測定光之能量分佈光譜。藉由使標準比視感度與所獲得之光譜匹配,而算出總光通量值。對於總光通量值,自點亮光源後連續地測定直至經過180秒後,結果於將剛點亮後設為1時,總光通量值之變化率為0.96。The wavelength conversion member is adhered to an LED light source with an excitation wavelength of 450 nm through a silicone resin adhesive, and the outer periphery of the LED light source and the wavelength conversion member are covered by the reflective member, thereby obtaining a light emitting device. Here, the wavelength conversion member is arranged so that the phosphor layer side faces the light source. A direct current of 1.0 A was applied to the light-emitting device to turn on the light source. After the light emitted from the wavelength conversion member is absorbed by the inside of the integrating sphere, it is guided to a spectroscope calibrated according to the standard light source, and the energy distribution spectrum of the light is measured. Calculate the total luminous flux value by matching the standard specific visual sensitivity with the obtained spectrum. The total luminous flux value was continuously measured after the light source was turned on until after 180 seconds had elapsed. As a result, when it was set to 1 immediately after lighting, the change rate of the total luminous flux value was 0.96.

又,對於自下述之式所算出之色度x,自點亮光源後連續地測定直至經過180秒後,結果其變化量(降低量)為0.002。In addition, the chromaticity x calculated from the following formula was continuously measured after the light source was turned on until 180 seconds passed. As a result, the amount of change (the amount of decrease) was 0.002.

(比較例) 利用與實施例1相同之方法,獲得厚度320 μm之螢光體層用之坯片。再者,螢光體粉末之添加量係以相對於玻璃粉末與螢光體粉末之合量成為8.5體積%之方式(於特性評價試驗中,於照射激發光源時所獲得之白色光之螢光體濃度)進行調整。(Comparative example) Using the same method as in Example 1, a green sheet for the phosphor layer with a thickness of 320 μm was obtained. Furthermore, the amount of phosphor powder added is such that the total amount of glass powder and phosphor powder becomes 8.5% by volume (in the characteristic evaluation test, the fluorescent white light obtained when the excitation light source is irradiated Body concentration) to adjust.

於電爐中對切斷為特定之尺寸之螢光體層用坯片實施脫脂處理後,於真空氣體置換爐中,於玻璃粉末之軟化點附近實施真空焙燒。藉由研削加工使藉此所獲得之玻璃粉末及螢光體粉末之燒結體成為鏡面狀態,獲得厚度120 μm之波長轉換構件。After debinding the green sheet for the phosphor layer cut to a specific size in an electric furnace, it is subjected to vacuum firing in a vacuum gas displacement furnace near the softening point of the glass powder. The sintered body of the glass powder and phosphor powder obtained by grinding is made into a mirror state, and a wavelength conversion member with a thickness of 120 μm is obtained.

針對所獲得之波長轉換構件,進行與實施例相同之特性評價試驗。其結果為,將剛點亮後設為1時,總光通量值之變化率為0.91,色度x之變化量(降低量)為0.012。With respect to the obtained wavelength conversion member, the same characteristic evaluation test as in the examples was performed. As a result, when set to 1 immediately after lighting, the change rate of the total luminous flux value was 0.91, and the change amount (decrease amount) of the chromaticity x was 0.012.

根據以上可知,本發明之波長轉換構件之點亮後之經時之光通量值之降低或色度之變化較少,容易獲得所需之光通量值或色度。From the above, it can be seen that the luminous flux value of the wavelength conversion member of the present invention decreases with time or the chromaticity changes less after lighting, and it is easy to obtain the required luminous flux value or chromaticity.

1:基材層 1a:玻璃粉末 1':基材層用坯片 2:螢光體層 2a:玻璃粉末 2b:螢光體粉末 2':螢光體層用坯片 3:基板 4:光源 5:反射構件 10:波長轉換構件 20:燒結積層體 20':坯片積層體 100:發光裝置1: substrate layer 1a: glass powder 1': Green sheet for base layer 2: Phosphor layer 2a: glass powder 2b: Phosphor powder 2': Green sheet for phosphor layer 3: substrate 4: light source 5: reflective component 10: Wavelength conversion component 20: Sintered laminated body 20': Blank laminated body 100: Light-emitting device

圖1係表示本發明之一實施形態之波長轉換構件之模式性剖視圖。 圖2(a)~(d)係表示本發明之一實施形態之波長轉換構件之製造方法之模式圖。 圖3係表示使用本發明之一實施形態之波長轉換構件之發光裝置之模式性剖視圖。Fig. 1 is a schematic cross-sectional view showing a wavelength conversion member according to an embodiment of the present invention. 2(a) to (d) are schematic diagrams showing a method of manufacturing a wavelength conversion member according to an embodiment of the present invention. 3 is a schematic cross-sectional view of a light emitting device using a wavelength conversion member according to an embodiment of the present invention.

Claims (14)

一種波長轉換構件,其特徵在於具備: 包含玻璃粉末之燒結體之基材層;及 形成於上述基材層之一主面且包含玻璃粉末與螢光體粉末之燒結體之螢光體層。A wavelength conversion component is characterized by having: A substrate layer of a sintered body containing glass powder; and A phosphor layer formed on one main surface of the substrate layer and containing a sintered body of glass powder and phosphor powder. 如請求項1之波長轉換構件,其中上述基材層之厚度大於上述螢光體層之厚度。The wavelength conversion member of claim 1, wherein the thickness of the substrate layer is greater than the thickness of the phosphor layer. 如請求項2之波長轉換構件,其中上述基材層之厚度為上述螢光體層之厚度之1.1~10倍。The wavelength conversion member of claim 2, wherein the thickness of the substrate layer is 1.1-10 times the thickness of the phosphor layer. 如請求項1至3中任一項之波長轉換構件,其中上述基材層之厚度為45~900 μm。The wavelength conversion member according to any one of claims 1 to 3, wherein the thickness of the substrate layer is 45-900 μm. 如請求項1至4中任一項之波長轉換構件,其中上述螢光體層之厚度為5~100 μm。The wavelength conversion member according to any one of claims 1 to 4, wherein the thickness of the phosphor layer is 5-100 μm. 如請求項1至5中任一項之波長轉換構件,其中上述螢光體層中之上述螢光體粉末之含量為1~80體積%。The wavelength conversion member according to any one of claims 1 to 5, wherein the content of the phosphor powder in the phosphor layer is 1 to 80% by volume. 如請求項1至6中任一項之波長轉換構件,其中上述螢光體粉末為石榴石系螢光體。The wavelength conversion member according to any one of claims 1 to 6, wherein the phosphor powder is a garnet-based phosphor. 如請求項1至7中任一項之波長轉換構件,其中上述螢光體粉末之平均粒徑為1~50 μm。The wavelength conversion member according to any one of claims 1 to 7, wherein the average particle diameter of the phosphor powder is 1-50 μm. 如請求項1至8中任一項之波長轉換構件,其中上述基材層中之上述玻璃粉末、與上述螢光體層中之上述玻璃粉末具有實質上相同之組成。The wavelength conversion member according to any one of claims 1 to 8, wherein the glass powder in the substrate layer and the glass powder in the phosphor layer have substantially the same composition. 如請求項1至9中任一項之波長轉換構件,其中上述基材層及/或上述螢光體層包含填料粉末。The wavelength conversion member according to any one of claims 1 to 9, wherein the substrate layer and/or the phosphor layer contains filler powder. 一種波長轉換構件之製造方法,其係用於製造如請求項1至10中任一項之波長轉換構件者,其特徵在於具備以下步驟: (a)準備包含玻璃粉末之基材層用坯片、及包含玻璃粉末及螢光體粉末之螢光體層用坯片; (b)藉由於複數個上述基材層用坯片之間夾持上述螢光體層用坯片而獲得坯片積層體; (c)藉由將上述坯片積層體進行焙燒,而獲得於包含上述玻璃粉末之燒結體之兩個基材層之間夾持包含上述玻璃粉末及螢光體粉末之燒結體之螢光體層而成之燒結積層體;及 (d)將上述燒結積層體中之上述基材層中之一者去除。A method for manufacturing a wavelength conversion member, which is used to manufacture the wavelength conversion member according to any one of Claims 1 to 10, characterized by having the following steps: (a) Prepare a green sheet for a substrate layer containing glass powder and a green sheet for a phosphor layer containing glass powder and phosphor powder; (b) The green sheet laminate is obtained by sandwiching the green sheet for the phosphor layer between a plurality of the green sheets for the base layer; (c) By firing the above-mentioned green sheet laminate, a phosphor layer in which a sintered body including the above glass powder and phosphor powder is sandwiched between two substrate layers of a sintered body including the above glass powder is obtained The sintered laminate; and (d) Remove one of the above-mentioned base material layers in the above-mentioned sintered laminate. 一種發光裝置,其特徵在於具備:如請求項1至10中任一項之波長轉換構件、及對上述波長轉換構件照射上述螢光體粉末之激發光之光源。A light emitting device, characterized by comprising: the wavelength conversion member according to any one of claims 1 to 10, and a light source for irradiating the wavelength conversion member with excitation light of the phosphor powder. 如請求項12之發光裝置,其中以使上述螢光體層與光源對向之方式配置上述波長轉換構件。The light-emitting device of claim 12, wherein the wavelength conversion member is arranged such that the phosphor layer and the light source are opposed to each other. 如請求項13之發光裝置,其中上述螢光體層係直接或介以接著劑層與光源相接。The light-emitting device of claim 13, wherein the phosphor layer is directly connected to the light source or via an adhesive layer.
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