TW202045758A - Method for manufacturing film formation product and sputtering method - Google Patents
Method for manufacturing film formation product and sputtering method Download PDFInfo
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- TW202045758A TW202045758A TW108143023A TW108143023A TW202045758A TW 202045758 A TW202045758 A TW 202045758A TW 108143023 A TW108143023 A TW 108143023A TW 108143023 A TW108143023 A TW 108143023A TW 202045758 A TW202045758 A TW 202045758A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23C—MILLING
- B23C5/00—Milling-cutters
- B23C5/16—Milling-cutters characterised by physical features other than shape
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
Description
本發明是有關於一種成膜品的製造方法及濺鍍(sputtering)裝置的技術。The present invention relates to a method for manufacturing a film-forming product and the technology of a sputtering device.
現有的成膜品的製造方法及濺鍍裝置的技術如例如專利文獻1所記載。The technology of the conventional film-forming product manufacturing method and sputtering apparatus is as described in
在專利文獻1中,已揭示一種塗佈裝置(coating device),其是一面使小徑工具旋轉,一面進行塗佈。所述塗佈裝置包括:自轉夾具(jig),可保持小徑工具,並且進行旋轉(自轉);小公轉夾具,使自轉夾具以小公轉軸為中心而旋轉(小公轉);以及大公轉夾具,使小公轉夾具以大公轉軸為中心而旋轉(大公轉)。自轉夾具、小公轉夾具及大公轉夾具的軸線(旋轉中心線)配置成相互平行。又,在所述大公轉夾具等的側方,配置有靶材(target)。In
在如上所述而構成的塗佈裝置中,一面使小徑工具進行自轉、小公轉及大公轉,一面利用自靶材發出的材料對小徑工具實施塗佈。藉由進行如上所述的自轉及公轉,可對小徑工具的整個表面實施塗佈。In the coating device configured as described above, while the small-diameter tool is rotated, the small-revolution, and the large-revolution, the small-diameter tool is coated with the material emitted from the target. By performing the above-mentioned rotation and revolution, the entire surface of the small-diameter tool can be coated.
但是,在專利文獻1所述的技術中,在使小徑工具進行旋轉(自轉及公轉(小公轉及大公轉))的情況下,雖然小徑工具的側面與靶材相向,但上表面不會與靶材相向。因此,在小徑工具的側面及上表面有可能產生塗佈不均,此方面存在改善的餘地。
[現有技術文獻]
[專利文獻]However, in the technique described in
[專利文獻1]日本專利特開2007-77469號公報[Patent Document 1] Japanese Patent Laid-Open No. 2007-77469
[發明所欲解決之課題][The problem to be solved by the invention]
本發明是鑒於如以上所述的狀況而完成者,其所欲解決之課題在於提供一種成膜品的製造方法及濺鍍裝置,可抑制形成於工件(work)的薄膜的不均的產生。 [解決課題之手段]The present invention was completed in view of the above-mentioned situation, and its object to be solved is to provide a method of manufacturing a film-formed product and a sputtering apparatus that can suppress the occurrence of unevenness in the thin film formed on the work. [Means to solve the problem]
本發明所欲解決之課題如以上所述,為了解決所述課題,本發明的成膜品的製造方法包括:工件保持步驟,以能夠以第一旋轉軸為中心而公轉,且能夠以第二旋轉軸為中心而自轉的方式保持工件,所述第二旋轉軸相對於濺鍍靶材傾斜;以及成膜步驟,一面進行以所述第一旋轉軸為中心的公轉、及以所述第二旋轉軸為中心的自轉,一面利用所述濺鍍靶材,對所述工件進行成膜。The problem to be solved by the present invention is as described above. In order to solve the problem, the method for manufacturing a film-formed product of the present invention includes a workpiece holding step, which can revolve around the first rotation axis and can rotate around the second axis. The workpiece is held by rotating the axis of rotation as the center, and the second axis of rotation is inclined with respect to the sputtering target; and the film formation step is performed while revolving around the first axis of rotation and centering on the second axis of rotation. The rotation axis rotates as the center, and the sputtering target is used to form a film on the workpiece.
又,本發明的濺鍍裝置包括:旋轉軸;濺鍍靶材,配置在所述旋轉軸的側方;旋轉部,能夠以所述旋轉軸為中心而旋轉;多個工件保持部,能夠保持工件,以排列於以所述旋轉軸為中心的圓周上的方式而配置,且以能夠以相對於所述濺鍍靶材傾斜的軸線為中心而旋轉的方式設置於所述旋轉部;以及旋轉驅動部,形成為以所述旋轉軸為中心的圓盤狀,並且以與多個所述工件保持部接觸的方式而配置,伴隨著所述旋轉部的旋轉,使所述工件保持部旋轉。In addition, the sputtering apparatus of the present invention includes: a rotating shaft; a sputtering target disposed on the side of the rotating shaft; a rotating part capable of rotating around the rotating shaft; and a plurality of workpiece holding parts capable of holding The workpieces are arranged so as to be arranged on a circumference centered on the rotating shaft, and are arranged in the rotating part so as to be rotatable about an axis inclined with respect to the sputtering target material as the center; and The driving part is formed in a disk shape centered on the rotating shaft, and is arranged so as to be in contact with a plurality of the workpiece holding parts, and rotates the workpiece holding part as the rotating part rotates.
又,本發明的成膜品的製造方法是利用所述濺鍍裝置來製造成膜品的方法。 [發明的效果]In addition, the method of manufacturing a film-formed product of the present invention is a method of manufacturing a film-formed product using the sputtering apparatus. [Effects of the invention]
根據本發明,可抑制形成於工件的薄膜的不均的產生。According to the present invention, it is possible to suppress the occurrence of unevenness in the thin film formed on the workpiece.
以下,將圖中的以箭頭U、箭頭D、箭頭L、箭頭R、箭頭F及箭頭B表示的方向,分別定義為上方向、下方向、左方向、右方向、前方向及後方向而進行說明。Hereinafter, the directions indicated by arrows U, D, L, R, F, and B in the figure are defined as up, down, left, right, front, and back, respectively. Description.
以下,利用圖1及圖2,說明本實施形態的濺鍍裝置1的概況。Hereinafter, the outline of the
濺鍍裝置1是在真空中進行成膜處理的真空處理裝置(真空成膜裝置)。本實施形態的濺鍍裝置1中,設想加工用的工具,作為成為成膜對象的工件(處理品)W。濺鍍裝置1主要包括成膜室2、工件保持部旋轉單元3、馬達4、排氣裝置5、靶材(濺鍍靶材)6及加熱器(heater)7。The
成膜室2形成用以對工件W實施成膜處理的空間。成膜室2形成為使軸線朝向上下方向的大致圓柱狀(參照圖2)。成膜室2形成為中空狀。The
工件保持部旋轉單元3使後述工件保持部60旋轉。工件保持部旋轉單元3配置在成膜室2內。The workpiece holding
馬達4(參照圖1)是用以驅動工件保持部旋轉單元3旋轉的驅動源。馬達4配置在成膜室2的外部。馬達4的動力經由適當的動力傳遞機構(例如軸等)而傳遞至工件保持部旋轉單元3。The motor 4 (refer to FIG. 1) is a driving source for driving the workpiece holding
排氣裝置5(參照圖1)藉由排出成膜室2內的空氣,而將成膜室2內調節成適合於成膜處理的真空度。The exhaust device 5 (refer to FIG. 1) exhausts the air in the
靶材6是成膜於工件W的材料(成膜材料)。靶材6形成為平板狀。靶材6配置在成膜室2內。靶材6是隔著工件保持部旋轉單元3而設置有一對。靶材6將板面配置成沿垂直方向。又,靶材6將板面配置成朝向成膜室2的中央(即,工件保持部旋轉單元3)。The
加熱器7是用以對工件W進行加熱,而使成膜品質(均勻性等)提高的構件。加熱器7配置在成膜室2內。加熱器7是隔著工件保持部旋轉單元3而設置有一對。靶材6及加熱器7等間隔地配置在工件保持部旋轉單元3的周圍。The
其次,對工件保持部旋轉單元3進行更具體的說明。Next, the workpiece holding
圖3及圖4所示的工件保持部旋轉單元3主要包括旋轉軸20、上部旋轉體30、旋轉輪40、安裝構件50、工件保持部60、固定圓盤70、限制部80及蓋體(cover)90。The workpiece holding
旋轉軸20成為後述旋轉輪40的旋轉中心。旋轉軸20形成為大致圓柱狀。旋轉軸20是使軸線朝向鉛垂方向(上下方向)而配置。將外筒構件21以能夠一體旋轉的方式嵌合於旋轉軸20,所述外筒構件21以覆蓋旋轉軸20的側面的方式形成為圓筒狀。在外筒構件21的上端部,形成鍵(key)槽21a。The rotating
上部旋轉體30能夠與旋轉軸20一體地旋轉。上部旋轉體30在俯視時形成為圓形形狀。在上部旋轉體30的底面的中心,固定旋轉軸20的上端部。在上部旋轉體30的底面的中心附近,固定鍵構件31。藉由使所述鍵構件31與外筒構件21的鍵槽21a卡合,來限制上部旋轉體30與旋轉軸20的相對旋轉。即,上部旋轉體30能夠與旋轉軸20一體地旋轉。上部旋轉體30的上部能夠旋轉地支持於成膜室2的上表面。對上部旋轉體30,可傳遞馬達4(參照圖1)的動力。上部旋轉體30藉由來自馬達4的動力,可與旋轉軸20一併旋轉。The upper rotating
圖3至圖6所示的旋轉輪40是使後述工件保持部60以旋轉軸20為中心而旋轉(公轉)的構件。旋轉輪40主要包括凸台(boss)部41、肋(rib)42及外周部43。The
凸台部41是形成於旋轉輪40的中心的部分。凸台部41形成為使軸線朝向鉛垂方向(上下方向)的大致圓筒狀。在凸台部41的中心,形成上下貫通凸台部41的貫通孔41a。The
肋42是以自凸台部41,在旋轉輪40的徑向上朝向凸台部41的外側延伸的方式而形成的棒狀部分。肋42在凸台部41的周圍等間隔地形成有多個(本實施形態中為五個)(參照圖6)。The
外周部43是支持後述工件保持部60的部分。外周部43在俯視時,形成為以凸台部41為中心的圓環狀。外周部43的內周面是在旋轉輪40的徑向上固定於肋42的外側的端部。如此一來,外周部43經由肋42而與凸台部41連接。再者,在本實施形態中,凸台部41、肋42及外周部43形成為一體。在外周部43,主要形成傾斜面43a及貫通孔43b。The outer
圖5及圖6所示的傾斜面43a形成於外周部43的上表面。傾斜面43a形成為朝向相對於上下方向(旋轉軸20的軸線方向)傾斜的方向。具體地說,傾斜面43a形成為越朝向旋轉輪40的徑向外側,越向下方傾斜。The
貫通孔43b是以上下貫通外周部43的方式而形成。貫通孔43b的上端形成為在傾斜面43a開口。貫通孔43b是以相對於傾斜面43a垂直地延伸的方式而形成。即,貫通孔43b形成為在相對於鉛垂方向(上下方向)傾斜的方向上延伸。更具體地說,貫通孔43b形成為越朝向上方,越向旋轉輪40的徑向外側延伸。貫通孔43b的下端(下側的開口部)藉由板狀的堵塞構件43c而堵塞。The through
如圖6所示,傾斜面43a及貫通孔43b沿外周部43的圓周方向等間隔地形成有多個。As shown in FIG. 6, a plurality of
如圖4所示,旋轉輪40設置於旋轉軸20(外筒構件21)。具體地說,使旋轉輪40的凸台部41(貫通孔41a)插通至旋轉軸20。此時,旋轉輪40與旋轉軸20以能夠一體地旋轉的方式而卡合。又,在旋轉軸20,以上下等間隔地排列有多個的方式設置有旋轉輪40。在圖1、圖3及圖4中,作為一例,圖示有兩個旋轉輪40。As shown in FIG. 4, the
圖4及圖5所示的安裝構件50是用以將後述工件保持部60安裝於旋轉輪40的構件。安裝構件50主要包括本體部51及凸緣(flange)部52。The
本體部51是形成為圓筒狀的部分。本體部51的外徑形成為與旋轉輪40的貫通孔43b的內徑大致相同。The
凸緣部52是圓盤狀的部分,以直徑自本體部51的上端部附近擴大的方式而形成。The
本體部51是自上方插入至旋轉輪40的貫通孔43b。凸緣部52藉由適當的緊固構件(螺栓(bolt)等)而固定於旋轉輪40的傾斜面43a。如此一來,將安裝構件50設置於旋轉輪40的各貫通孔43b。安裝構件50(本體部51)的軸線配置成以與貫通孔43b相同的角度而傾斜。The
工件保持部60可旋轉(自轉)地保持工件W。工件保持部60主要包括旋轉支持部61及被旋轉驅動部62。The
旋轉支持部61保持工件W。旋轉支持部61主要包括保持部61a及支持部61b。The
保持部61a是保持工件W的部分。保持部61a形成為具有底面(下表面)的大致圓筒狀(有底筒狀)。保持部61a的上部開口,可保持自所述開口插入的工件W。再者,保持部61a不僅可直接保持工件W,而且可經由適當的構件(保持工件W的蓋帽(cap)等)保持工件W。The holding
支持部61b是經由安裝構件50支持於旋轉輪40的部分。支持部61b形成為大致圓柱狀。支持部61b的外徑形成為小於安裝構件50的內徑。支持部61b形成為自保持部61a的底面向下方突出。支持部61b及保持部61a形成於同一軸線上。The
支持部61b是自上方插入至安裝構件50的本體部51。支持部61b經由適當的軸承構件61c,而能夠旋轉地支持於安裝構件50(本體部51)。藉由將支持部61b插入至本體部51,而以自旋轉輪40向上方突出的方式配置保持部61a。旋轉支持部61的軸線配置成以與安裝構件50(本體部51)的軸線相同的角度而傾斜。換言之,旋轉支持部61如圖1所示,配置成相對於配置在側方的靶材6的板面而傾斜。旋轉支持部61能夠以相對於旋轉軸20的軸線(上下方向)傾斜的軸線為中心而旋轉(自轉)。The
再者,作為軸承構件61c,可使用任意的構件。例如,可適當選擇滾珠軸承(ball bearing)、滾柱軸承(roller bearing)、滑動軸承(sliding bearing)等任意的構件。又,亦可針對一個支持部61b,設置多個軸承構件61c。In addition, as the bearing
又,支持部61b的軸線的傾斜角度(後述傾斜角度α(參照圖5))可任意設定。例如,支持部61b可設定為相對於旋轉軸20或靶材6(以鉛垂方向為基準)傾斜20°~80°。In addition, the inclination angle of the axis of the
被旋轉驅動部62是與後述固定圓盤70接觸的部分。被旋轉驅動部62在自旋轉支持部61的軸線方向觀察時形成為大致圓形的平板狀。在被旋轉驅動部62的中心形成貫通孔62a。被旋轉驅動部62的貫通孔62a在旋轉輪40的上方,與旋轉支持部61的保持部61a嵌合。因此,被旋轉驅動部62能夠與旋轉支持部61一體地旋轉。The driven
如此一來,工件保持部60經由安裝構件50,設置於旋轉輪40的外周部43。又,工件保持部60是以沿外周部43(即,在以旋轉軸20為中心的圓周上)排列的方式設置有多個。In this way, the
圖3至圖5及圖7所示的固定圓盤70是用以使工件保持部60旋轉的構件。固定圓盤70在俯視時,形成為圓形的板狀(圓盤狀)。在固定圓盤70的中心,形成貫通孔70a。The fixed
如圖4所示,固定圓盤70經由固定構件71及軸承構件72,設置於旋轉軸20。具體地說,在固定圓盤70的內側(貫通孔70a),經由固定構件71而固定軸承構件72的外輪。將所述軸承構件72的內輪插通至旋轉軸20,並固定於旋轉軸20。如上所述,固定圓盤70經由軸承構件72而能夠相對旋轉地設置於旋轉軸20。固定圓盤70是在旋轉輪40的上方,與旋轉輪40空開適當的間隔而設置。即,固定圓盤70是以與各旋轉輪40相對應的方式,設置與旋轉輪40相同的數量。固定圓盤70的外周端部配置成與設置於相對應的旋轉輪40的工件保持部60的被旋轉驅動部62接觸。As shown in FIG. 4, the fixed
再者,作為軸承構件72,可使用任意的構件。例如,可適當選擇滾珠軸承、滾柱軸承、滑動軸承等任意的構件。In addition, as the bearing
固定圓盤70及被旋轉驅動部62是以如下的方式構成:藉由工件保持部60以旋轉軸20為中心而旋轉(公轉),而將用以使工件保持部60自轉的動力傳遞至工件保持部60。例如,固定圓盤70及被旋轉驅動部62可藉由具有相互咬合的齒的齒輪(例如,傘形齒輪等)而形成。由此,固定圓盤70可使工件保持部60連續地旋轉(自轉)(特別是在工件W與靶材6相向的狀態下,使所述工件W連續地旋轉)。此外,固定圓盤70及被旋轉驅動部62只要是能夠相互接觸而傳遞動力的構成即可。例如,亦可為如下的構成,即,利用齒輪、鏈條(chain)與鏈輪(sprocket)的組合、孔部與突起部的組合等咬合結構來傳遞動力的結構,以及利用接觸面彼此的摩擦力來傳遞動力的構成等。
又,固定圓盤70與被旋轉驅動部62亦可經由不含機械機構的介入物而接觸。此時,旋轉部即固定圓盤70與工件保持部60的一部分即被旋轉驅動部62相接觸,而不介入機械機構。The fixed
又,固定圓盤70及被旋轉驅動部62並不限於如齒輪之類使動力連續地傳遞,而使工件保持部60連續地旋轉的構件。例如,固定圓盤70及被旋轉驅動部62亦可藉由利用凸輪(cam)等間歇地傳遞動力,而使工件保持部60間歇地旋轉(自轉)。In addition, the fixed
限制部80限制固定圓盤70的旋轉。限制部80主要包括第一限制構件81及第二限制構件82。The restricting
第一限制構件81固定於各固定圓盤70。第一限制構件81是使矩形形狀的板材彎曲而形成。具體地說,第一限制構件81包括水平延伸的左部81a、自左部81a的右端向鉛垂上方延伸的中途部81b、以及自中途部81b的上端向右方延伸的右部81c。如上所述,第一限制構件81形成為固定圓盤70的徑向外側的部分(右部81c)高於徑向內側的部分(左部81a)。因此,可避免與工件保持部60、工件W發生干擾。The first restricting
第一限制構件81的左部81a藉由適當的緊固構件(螺栓等)而固定於固定圓盤70的上表面的右端部附近。第一限制構件81的右部81c是以自固定圓盤70向右方突出的方式而配置。在右部81c,形成缺口部81d。The
第二限制構件82與第一限制構件81卡合。第二限制構件82形成為大致圓柱狀。第二限制構件82使軸線朝向鉛垂方向(上下方向)而配置。第二限制構件82的上端部經由支架(bracket)82a固定於成膜室2的上表面。第二限制構件82與設置於各固定圓盤70的第一限制構件81的缺口部81d卡合。更具體地說,在第一限制構件81的缺口部81d,嵌入第二限制構件82,而限制固定圓盤70的旋轉。The
如上所述,藉由設置於固定圓盤70的第一限制構件81與固定於成膜室2的第二限制構件82卡合,來限制固定圓盤70的旋轉。因此,即使旋轉軸20旋轉,固定圓盤70也不會旋轉。As described above, the first restricting
圖3至圖5所示的蓋體90覆蓋工件保持部60。蓋體90是使板狀的構件適當彎曲而形成。蓋體90配置成自側方(固定圓盤70的徑向外側)及上方覆蓋工件保持部60。在蓋體90,形成貫通孔91。可經由貫通孔91,使保持於工件保持部60的工件W露出至蓋體90的外側。蓋體90藉由適當的方法而固定於旋轉輪40。The
其次,說明利用馬達4的動力而使工件保持部旋轉單元3運行的情形。Next, the case where the work holding
當馬達4驅動時,藉由馬達4的動力而使得旋轉軸20旋轉。旋轉輪40與旋轉軸20一體地旋轉。藉此,設置於旋轉輪40的外周部43的工件保持部60以旋轉軸20為中心而旋轉(公轉)。When the motor 4 is driven, the rotating
另一方面,固定圓盤70藉由限制部80而限制了旋轉,所述固定圓盤70是能夠相對旋轉地設置於旋轉軸20。因此,固定圓盤70不會伴隨著旋轉軸20的旋轉而旋轉。On the other hand, the rotation of the fixed
工件保持部60的被旋轉驅動部62一面與固定的(不旋轉的)固定圓盤70接觸,一面以旋轉軸20為中心而旋轉(公轉)。藉此,工件保持部60一面以旋轉軸20為中心而旋轉(公轉),一面以所述工件保持部60的軸線為中心而旋轉(自轉)(參照圖2)。The rotationally driven
又,工件保持部60在以旋轉軸20為中心而旋轉(公轉)的情況下,在自工件保持部60的外側向旋轉軸20的方向上觀察時(換言之,如圖4及圖5所示的穿過旋轉軸20,且與旋轉軸20平行的剖面觀察時)的傾斜角度α始終為固定。再者,所謂傾斜角度α,是指在圖4及圖5所示的剖面(自以旋轉軸20為中心的虛擬圓的圓周方向觀察的剖面)中,相對於旋轉軸20的軸線和靶材6的板面的角度。在本實施形態中,旋轉軸20的軸線及靶材6的板面在上下方向(鉛垂方向)上平行,因此傾斜角度α在圖4及圖5所示的剖面中,成為相對於沿上下方向(鉛垂方向)的虛擬線X的角度。所謂自以旋轉軸20為中心的虛擬圓的圓周方向觀察的剖面,亦可表達為自以旋轉軸20為中心的虛擬圓的圓周上觀察的剖面。Also, when the
因此,若工件保持部60以旋轉軸20為中心而旋轉(公轉),則在工件W與靶材6相向的位置,在成膜材料的粒子自靶材6與工件W碰撞而成膜得較厚的成膜區域內,工件保持部60(工件W)相對於靶材6的傾斜角度α為大致固定。此外,藉由此時以工件保持部60的軸線為中心而自轉,可使形成於工件W的整個露出面的膜的膜質均勻化。Therefore, when the
其次,說明利用如上所述而構成的濺鍍裝置1的成膜品的製造方法(濺鍍方法)。Next, the manufacturing method (sputtering method) of the film-formed product using the
如圖8所示,本實施形態的成膜品的製造方法主要包括工件保持步驟S1、排氣步驟S2、工件加熱步驟S3及成膜步驟S4。As shown in FIG. 8, the method of manufacturing a film-forming product of the present embodiment mainly includes a workpiece holding step S1, an exhaust step S2, a workpiece heating step S3, and a film forming step S4.
工件保持步驟S1是使工件保持部60保持工件W的步驟。在工件保持步驟S1中,操作員將工件W插入至工件保持部60的保持部61a,藉由所述工件保持部60而保持工件W。The workpiece holding step S1 is a step in which the
排氣步驟S2是排出成膜室2內的空氣的步驟。在排氣步驟S2中,當使排氣裝置5運行時,排出成膜室2內的空氣。藉由適當控制排氣裝置5,而將成膜室2內調節成適合於成膜處理的真空度。The exhaust step S2 is a step of exhausting the air in the
工件加熱步驟S3是對工件W進行加熱的步驟。在工件加熱步驟S3中,當使馬達4驅動時,使工件保持部旋轉單元3運轉,而開始工件保持部60的旋轉(公轉及自轉)。又,在工件加熱步驟S3中,使加熱器7運轉,而將保持於工件保持部60的工件W加熱至適當的溫度為止。The work heating step S3 is a step of heating the work W. In the workpiece heating step S3, when the motor 4 is driven, the workpiece holding
成膜步驟S4是對工件W實施成膜處理的步驟。在成膜步驟S4中,繼續使工件保持部旋轉單元3運轉。又,在成膜步驟S4中,對成膜室2內供給濺鍍氣體(例如,Ar等惰性氣體)。藉由在所述狀態下對靶材6施加負的電壓或高頻(射頻(Radio Frequency,RF))的電壓,而產生輝光放電。由此,藉由使濺鍍氣體離子化,使所述離子與靶材6的表面高速碰撞,而敲出構成靶材6的成膜材料的粒子(濺鍍粒子)。自靶材6敲出的成膜材料的粒子附著於工件W的表面。藉由使所述粒子堆積於工件W的表面,可形成薄膜。如此一來,可製造已實施成膜處理的工件W(成膜品)。The film forming step S4 is a step of applying a film forming process to the workpiece W. In the film forming step S4, the work holding
再者,在本實施形態中,為了方便,已依次說明工件保持步驟S1、排氣步驟S2、工件加熱步驟S3及成膜步驟S4,但成膜品的製造方法不一定限定於此。例如,亦可調換一部分步驟的順序(例如,調換排氣步驟S2與工件加熱步驟S3的順序等),或同時進行所述步驟(例如,同時進行排氣步驟S2與工件加熱步驟S3等)。In addition, in this embodiment, for convenience, the workpiece holding step S1, the exhaust step S2, the workpiece heating step S3, and the film forming step S4 have been sequentially described, but the manufacturing method of the film formed product is not necessarily limited to this. For example, the order of a part of the steps may be changed (for example, the order of the exhaust step S2 and the workpiece heating step S3, etc.), or the steps may be performed at the same time (for example, the exhaust step S2 and the workpiece heating step S3 may be performed simultaneously).
此處,利用圖9(a)及圖9(b),說明如下的情形:藉由使用濺鍍裝置1的成膜品的製造方法,來抑制形成於工件W的薄膜的不均的產生。再者,在圖9(a)及圖9(b)中,為了便於說明,簡化工件W的形狀,而圖示為圓柱狀的工件W。Here, using FIGS. 9( a) and 9 (b ), a case will be described in which the production method of a film-formed product using the
作為比較例,如圖9(a)所示,假設如下的情況:工件W未傾斜,以朝向鉛垂方向的軸線為中心而自轉。此時,工件W進行自轉,故工件W的整個側面與配置於工件W的側方的靶材6相向。藉此,可使來自靶材6的成膜材料的粒子附著於工件W的整個側面。As a comparative example, as shown in FIG. 9( a ), it is assumed that the workpiece W is not tilted, but rotates around an axis that faces the vertical direction. At this time, the workpiece W rotates, so the entire side surface of the workpiece W faces the
另一方面,即使工件W自轉,由於工件W的上表面不與靶材6相向,因此來自靶材6的成膜材料的粒子亦難以附著於工件W的上表面。即,在工件W的側面及上表面,有可能所形成的薄膜產生不均。On the other hand, even if the workpiece W rotates, since the upper surface of the workpiece W does not face the
特別是在藉由濺鍍(濺鍍法)的成膜處理中,形成於工件W的側面與上表面的薄膜的壓縮應力(內部應力)會產生差,藉由所述壓縮應力的差,有可能導致薄膜的密接性及均質性的下降等。Especially in the film forming process by sputtering (sputtering method), there is a difference in the compressive stress (internal stress) of the thin film formed on the side and upper surface of the workpiece W. Due to the difference in the compressive stress, there is It may result in a decrease in the adhesion and homogeneity of the film.
與此相對,在本實施形態中,如圖9(b)所示,構成為工件W以相對於靶材6傾斜的軸線為中心而自轉。此時,不僅工件W的側面,而且上表面亦可與靶材6相向。因此,在工件W的側面與上表面,可抑制所形成的薄膜產生不均。又,在工件W的側面與上表面,可抑制薄膜的壓縮應力產生差,從而可實現薄膜的密接性及均質性的提高。In contrast, in this embodiment, as shown in FIG. 9( b ), the workpiece W is configured to rotate around an axis inclined with respect to the
以下,利用圖10及圖11,說明藉由本實施形態的濺鍍裝置1(成膜品的製造方法)而成膜的工具的評估的一例。Hereinafter, using FIGS. 10 and 11, an example of the evaluation of a tool for forming a film by the sputtering device 1 (a method of manufacturing a film-forming product) of the present embodiment will be described.
在圖10中,表示藉由本實施形態的濺鍍裝置1而成膜的工具(以下稱為「本申請工具」)、與作為比較例而利用現有公知的方法來成膜的工具(以下稱為「比較例」)的關於壽命的評估的一例。In FIG. 10, a tool for forming a film by the
此處,作為本實施形態中的濺鍍條件,是藉由利用RF電源的RF濺鍍法,在濺鍍靶材中使用AlCr系合金,利用反應性濺鍍而進行成膜,所述反應性濺鍍的濺鍍氣體是使用使氬氣中含有氮氣的混合氣體。Here, as the sputtering conditions in this embodiment, an AlCr-based alloy is used as a sputtering target by an RF sputtering method using an RF power supply, and a film is formed by reactive sputtering. The sputtering gas used for sputtering is a mixed gas in which nitrogen is contained in argon.
再者,作為評估的對象的工具是「R0.5超硬球頭銑刀(ball end mill)」。所述工具是母材為WC-Co合金的「超硬材料(超硬合金)」,且實施有AlCrN系的成膜(塗佈)。Furthermore, the tool to be evaluated is the "R0.5 ball end mill (ball end mill)". The tool is a "superhard material (super hard alloy)" whose base material is a WC-Co alloy, and is subjected to AlCrN-based film formation (coating).
又,作為評估試驗,利用所述兩種工具而進行切削加工。成為切削加工的對象的材料種類(被切削材料種類)是SUS420J2(HRC55)。加工條件是轉速為30,000(min-1 ),進給速度為1,500(mm/min),切入Rd(XY):0.05(mm)。In addition, as an evaluation test, cutting was performed using the two tools. The type of material to be cut (type of material to be cut) is SUS420J2 (HRC55). The processing conditions are that the speed is 30,000 (min -1 ), the feed rate is 1,500 (mm/min), and the cutting Rd (XY): 0.05 (mm).
又,作為評估時的壽命的基準(用以判斷工具壽命的工具的磨損量),設定有兩種類型的基準,即,(A):磨損量0.005(mm)、(B):磨損量0.01(mm)。圖10的橫軸表示加工距離,縱軸表示磨損量。In addition, as the standard of the life at the time of evaluation (the amount of wear of the tool used to judge the life of the tool), two types of standards are set, namely, (A): the amount of wear 0.005 (mm), (B): the amount of wear 0.01 (Mm). The horizontal axis of FIG. 10 represents the machining distance, and the vertical axis represents the amount of wear.
如圖10所示,當將壽命基準設為(A):磨損量0.005(mm)時,比較例的壽命為104.8(m),與此相對,本申請工具的壽命為200.1(m)。即,可知當將壽命基準設為(A):磨損量0.005(mm)時,本申請工具與比較例相比,工具壽命延長至約2倍。As shown in FIG. 10, when the life standard is set to (A): the amount of wear 0.005 (mm), the life of the comparative example is 104.8 (m), while the life of the tool of the present application is 200.1 (m). That is, it can be seen that when the life criterion is set to (A): the amount of wear 0.005 (mm), the tool life of the present application is approximately doubled compared with the comparative example.
又,當將壽命基準設為(B):磨損量0.01(mm)時,比較例的壽命為109.8(m),與此相對,本申請工具的壽命為293.5(m)。即,可知當將壽命基準設為(B):磨損量0.01(mm)時,本申請工具與比較例相比,工具壽命延長至約3倍。Moreover, when the life standard is set to (B): the amount of wear 0.01 (mm), the life of the comparative example is 109.8 (m), while the life of the tool of the present application is 293.5 (m). That is, it can be seen that when the life criterion is set to (B): the amount of wear 0.01 (mm), the tool life of the present application is prolonged by about 3 times compared with the comparative example.
圖11中,表示本申請工具與比較例的關於缺損的產生的評估的一例。FIG. 11 shows an example of the evaluation of the occurrence of defects between the tool of the present application and the comparative example.
再者,作為關於缺損的產生的評估,已比較在與圖10所示的示例相同的條件下進行有200(m)的切削加工時的工具的缺損的產生次數。評估次數(切削加工的次數)為十次,在切削加工後,利用工廠顯微鏡以20倍的倍率觀察工具。當不論缺損的大小,確認到缺損時,作為已產生缺損而計數。In addition, as an evaluation regarding the occurrence of defects, the number of occurrences of tool defects when cutting with 200 (m) is performed under the same conditions as in the example shown in FIG. 10 has been compared. The number of evaluations (the number of cutting processes) is ten. After the cutting process, the tool is observed with a factory microscope at a magnification of 20 times. When a defect is confirmed regardless of the size of the defect, it is counted as having a defect.
其結果為,如圖11所示,在比較例中,十次評估次數之中,八次確認到缺損的產生。與此相對,在本申請工具中,十次評估次數之中,僅兩次確認到缺損的產生。即,可知本申請工具的缺損的產生率為比較例的四分之一。As a result, as shown in FIG. 11, in the comparative example, out of ten evaluation times, the occurrence of defects was confirmed eight times. In contrast, in the tool of this application, out of ten times of evaluation, only two of the defects were confirmed. That is, it can be seen that the rate of occurrence of defects in the tool of the present application is one quarter of that of the comparative example.
如上所述,可知藉由本實施形態的濺鍍裝置1(成膜品的製造方法)而成膜的工具,藉由薄膜(塗佈)的密接性及均質性的提高,可實現壽命的延長及缺損的產生的抑制。As described above, it can be seen that the tool for forming a film by the sputtering device 1 (method of manufacturing a film-forming product) of this embodiment can achieve an extension of life and an improvement in the adhesion and homogeneity of the film (coating). Inhibition of defects.
再者,在本實施形態中,作為真空處理裝置(真空成膜裝置)的一例,已例示進行濺鍍的裝置(濺鍍裝置1),但本發明並不限於此,此外亦可應用於各種真空處理。例如,可應用於利用粒子的物理運動的濺鍍法以外的物理氣相沈積法(物理蒸鍍法:物理氣相沈積(Physical Vapor Deposition,PVD))。Furthermore, in this embodiment, as an example of a vacuum processing apparatus (vacuum film forming apparatus), an apparatus for sputtering (sputtering apparatus 1) has been exemplified, but the present invention is not limited to this, and can be applied to various Vacuum treatment. For example, it can be applied to physical vapor deposition methods (Physical Vapor Deposition (Physical Vapor Deposition, PVD)) other than the sputtering method that uses the physical movement of particles.
再者,在PVD中,作為對蒸鍍源進行加熱使其蒸發而進行成膜的蒸發系統,有真空蒸鍍、分子束蒸鍍、離子鍍(ion plating)、離子束蒸鍍、電漿雷射沈積(plasma laser deposition,PLD)等。又,作為如本實施形態中所例示的濺鍍系統,有常規濺鍍(conventional sputtering)、磁控濺鍍(magnetron sputtering)、離子束濺鍍(ion beam sputtering)、電子迴旋共振(Electron Cyclotron Resonance,ECR)濺鍍、反應性濺鍍(導入反應性氣體(O2 、N2 等),進行氧化物和氮化物的成膜的濺鍍)等。又,亦可根據工件W的材料,使用利用RF(高頻)電源的RF濺鍍。Furthermore, in PVD, as an evaporation system that heats a vapor deposition source to evaporate to form a film, there are vacuum vapor deposition, molecular beam vapor deposition, ion plating, ion beam vapor deposition, plasma mine Plasma laser deposition (PLD), etc. Furthermore, as the sputtering system exemplified in this embodiment, there are conventional sputtering, magnetron sputtering, ion beam sputtering, and electron cyclotron resonance (Electron Cyclotron Resonance). , ECR) sputtering, reactive sputtering (introduction of reactive gases (O 2 , N 2, etc.), sputtering of oxide and nitride film formation), etc. In addition, depending on the material of the workpiece W, RF sputtering using an RF (high frequency) power supply may be used.
又,作為藉由本實施形態而形成於工件W的薄膜,是特別假設包含AlCrN、AlN、TiCrN、TiN、TiAlN、TiAlCrN、Al2 O3 之中的至少一者的由單層或多層構成的薄膜,但亦可形成其他任意的薄膜。In addition, as the thin film formed on the workpiece W according to this embodiment, a thin film composed of a single layer or multiple layers including at least one of AlCrN, AlN, TiCrN, TiN, TiAlN, TiAlCrN, and Al 2 O 3 is particularly assumed , But other arbitrary films can also be formed.
又,除了所述成膜材料以外,亦可適當加入添加物。例如,作為添加劑,可加入Nb、Ta、Mo、V、Y、Si等。Moreover, in addition to the above-mentioned film-forming material, additives may be added as appropriate. For example, as additives, Nb, Ta, Mo, V, Y, Si, etc. can be added.
如上所述,本實施形態的成膜品的製造方法包括:
工件保持步驟S1,以能夠以第一旋轉軸(旋轉軸20)為中心而公轉,且能夠以第二旋轉軸(工件保持部60)為中心而自轉的方式保持工件W,所述第二旋轉軸(工件保持部60)相對於靶材6(濺鍍靶材)傾斜;以及
成膜步驟S4,一面進行以所述第一旋轉軸為中心的公轉、及以所述第二旋轉軸為中心的自轉,一面利用所述靶材6,對所述工件W進行成膜。As described above, the manufacturing method of the film-forming product of this embodiment includes:
The workpiece holding step S1 is to hold the workpiece W so that it can revolve around the first rotating shaft (rotating shaft 20) and can rotate around the second rotating shaft (work holding portion 60). The second rotation The shaft (work holding portion 60) is inclined with respect to the target 6 (sputtering target); and
In the film formation step S4, while performing revolution around the first rotation axis and rotation around the second rotation axis, the
藉由如上所述而構成,可抑制形成於工件W的薄膜的不均的產生。例如,如本實施形態,藉由將工件保持部60設為能夠以相對於靶材6傾斜的軸線為中心而旋轉(自轉),可不僅容易地對工件W的側面,而且容易對上表面實施成膜處理。藉此,可抑制所形成的薄膜的不均的產生,甚至可實現薄膜(塗佈)的密接性及均質性的提高。By configuring as described above, the occurrence of unevenness in the thin film formed on the workpiece W can be suppressed. For example, as in the present embodiment, by setting the
又,在所述工件保持步驟S1中,所述工件W是以如下的方式被保持,即,與所述靶材6相向的狀態下的相對於所述靶材6的傾斜角度α為固定。In addition, in the workpiece holding step S1, the workpiece W is held in such a manner that the inclination angle α with respect to the
藉由如上所述而構成,而在多個工件保持部60,在相對於靶材6以固定的角度傾斜的狀態下實施成膜處理,所述靶材6配置在旋轉輪40的徑向外側。藉此,可抑制產生工件W的處理面對角度的依賴性(因傾斜角度α的變化所引起的不均等不良情況)。By configuring as described above, the plurality of
又,所述成膜步驟S4是利用高頻濺鍍對所述工件W進行成膜。In addition, the film forming step S4 is to form a film on the workpiece W by high-frequency sputtering.
藉由如上所述而構成,可改善所形成的膜的膜質。By configuring as described above, the film quality of the formed film can be improved.
又,所述成膜步驟S4是利用反應性濺鍍對所述工件進行成膜。In addition, the film forming step S4 is to form a film on the workpiece by reactive sputtering.
藉由如上所述而構成,可將反應性氣體與靶材6的構成物質的生成物質(例如,氧化物、氮化物等)形成為薄膜。By being configured as described above, it is possible to form a thin film of reactive gas and constituent substances of the target 6 (for example, oxides, nitrides, etc.).
又,所述工件保持步驟S1使用加工用的工具作為所述工件W。In addition, in the workpiece holding step S1, a machining tool is used as the workpiece W.
藉由如上所述而構成,可對具有複雜形狀的加工用的工具,亦適當地實施成膜處理。By configuring as described above, it is possible to appropriately perform the film forming process on a tool for processing having a complicated shape.
又,所述成膜步驟S4是針對所述工件W形成膜,所述膜包括AlCrN、AlN、TiCrN、TiN、TiAlN、TiAlCrN、Al2 O3 之中的至少一者,由單層或多層構成。In addition, the film forming step S4 is to form a film on the workpiece W, the film includes at least one of AlCrN, AlN, TiCrN, TiN, TiAlN, TiAlCrN, Al 2 O 3 and is composed of a single layer or multiple layers .
藉由如上所述而構成,可針對工件W形成硬質膜,使耐磨損性、耐熱性等提高。By constituting as described above, a hard film can be formed on the workpiece W, and abrasion resistance, heat resistance, etc. can be improved.
又,所述成膜步驟S4是在藉由以所述第一旋轉軸為中心的公轉而使所述工件W與所述靶材6相向的狀態下,使所述工件W以所述第二旋轉軸為中心而連續地自轉。In addition, in the film forming step S4, in a state where the workpiece W and the
藉由如上所述而構成,可實現薄膜(塗佈)的均質性的提高。By constituting as described above, the uniformity of the film (coating) can be improved.
又,本實施形態的濺鍍裝置1包括:
旋轉軸20;
靶材6(濺鍍靶材),配置在所述旋轉軸20的側方;
旋轉輪40(旋轉部),能夠以所述旋轉軸20為中心而旋轉;
多個工件保持部60,能夠保持工件W,以排列於以所述旋轉軸20為中心的圓周上的方式而配置,以能夠以相對於所述靶材6傾斜的軸線為中心而旋轉的方式設置於所述旋轉輪40;以及
固定圓盤70(旋轉驅動部),形成為以所述旋轉軸20為中心的圓盤狀,並且以與多個所述工件保持部60接觸的方式而配置,伴隨著所述旋轉輪40的旋轉,使所述工件保持部60旋轉。In addition, the
藉由如上所述而構成,藉由一面使工件保持部60旋轉,一面對工件W利用靶材6實施成膜處理,可抑制形成於工件W的薄膜的不均的產生。例如,如本實施形態,藉由將工件保持部60,設為能夠以相對於靶材6傾斜的軸線為中心而旋轉(自轉),可不僅容易地對工件W的側面,而且容易對上表面實施成膜處理。藉此,可抑制所形成的薄膜的不均的產生,甚至可實現薄膜(塗佈)的密接性及均質性的提高。With the configuration as described above, by rotating the
又,本實施形態的成膜品的製造方法是利用所述濺鍍裝置1來製造成膜品。In addition, the method of manufacturing a film-formed product of this embodiment uses the
藉由如上所述而構成,可抑制所形成的薄膜的不均的產生,甚至可實現薄膜(塗佈)的密接性及均質性的提高。By constituting as described above, the occurrence of unevenness in the formed film can be suppressed, and even the adhesion and uniformity of the film (coating) can be improved.
又,本實施形態的工件保持部旋轉單元3包括:
旋轉軸20;
旋轉輪40(旋轉部),能夠以所述旋轉軸20為中心而旋轉;
多個工件保持部60,能夠保持工件W,以排列於以所述旋轉軸20為中心的圓周上的方式而配置,以能夠以相對於所述旋轉軸20的軸線傾斜的軸線為中心而旋轉的方式,設置於所述旋轉輪40;以及
固定圓盤70(旋轉驅動部),形成為以所述旋轉軸20為中心的圓盤狀,並且以與多個所述工件保持部60接觸的方式而配置,伴隨著所述旋轉輪40的旋轉,使所述工件保持部60旋轉。In addition, the workpiece holding
藉由如上所述而構成,藉由一面使工件保持部60旋轉,一面對工件W實施成膜處理,可抑制形成於工件W的薄膜的不均的產生。例如,如本實施形態,藉由將工件保持部60設為能夠以相對於旋轉軸20傾斜的軸線為中心而旋轉(自轉),可不僅容易地對工件W的側面,而且容易對上表面實施成膜處理。藉此,可抑制所形成的薄膜的不均的產生,甚至可實現薄膜(塗佈)的密接性及均質性的提高。By configuring as described above, by rotating the
特別是在本實施形態中,設為如下的構成:藉由與多個工件保持部60接觸的圓盤狀的固定圓盤70,而使多個工件保持部60旋轉(自轉)。在如上所述的構成中,多個工件保持部60保持著朝向旋轉輪40的徑向外側以固定的角度傾斜的姿勢而自轉及公轉。即,在多個工件保持部60,在相對於靶材6以固定的角度傾斜的狀態下實施成膜處理,所述靶材6配置在旋轉輪40的徑向外側。藉此,可抑制產生工件W的處理面對角度的依賴性(因傾斜角度α的變化所引起的不均等不良情況)。In particular, in the present embodiment, a configuration is adopted in which the plurality of
又,所述旋轉軸20形成為能夠利用來自馬達4(動力源)的動力而旋轉,
所述旋轉輪40以能夠與所述旋轉軸20一體地旋轉的方式設置於所述旋轉軸20,
所述固定圓盤70能夠相對旋轉地設置於所述旋轉軸20,
更包括限制部80,所述限制部80限制所述固定圓盤70的旋轉。In addition, the rotating
藉由如上所述而構成,藉由對固定圓盤70進行固定(限制旋轉),而使得旋轉輪40與固定圓盤70相對旋轉,可藉由所述相對旋轉而使工件保持部60旋轉(自轉)。又,藉由利用限制部80限制固定圓盤70的旋轉,可防止固定圓盤70與旋轉軸20一併旋轉,從而能夠使工件保持部60以穩定的速度(固定的速度)旋轉。By configuring as described above, by fixing the fixed disk 70 (restricting rotation), the
又,所述旋轉輪40、設置於所述旋轉輪40的所述工件保持部60、及使所述工件保持部60旋轉的所述固定圓盤70沿所述旋轉軸20的軸線方向設置有多個。In addition, the
藉由如上所述而構成,可一次使多個工件W旋轉,能夠提高成膜處理的效率。By configuring as described above, a plurality of workpieces W can be rotated at once, and the efficiency of the film forming process can be improved.
又,所述工件保持部60包括:
旋轉支持部61,保持所述工件W,並且能夠旋轉地支持於所述旋轉輪40;以及
被旋轉驅動部62,固定於所述旋轉支持部61,以與所述固定圓盤70接觸的方式而配置。Furthermore, the
藉由如上所述而構成,藉由將旋轉支持部61及被旋轉驅動部62形成為分開的構件,可抑制各個零件的形狀的複雜化。By configuring as described above, by forming the
又,所述旋轉支持部61經由軸承構件61c而可旋轉地支持於所述旋轉輪40。In addition, the
藉由如上所述而構成,可使工件保持部60順滑地旋轉。藉此,可實現工件保持部60的旋轉所需的驅動力的削減。By configuring as described above, the
又,所述旋轉支持部61配置成將下部插通至所述旋轉輪40,並且上部自所述旋轉輪40朝向上方突出,
所述被旋轉驅動部62在所述旋轉輪40的上方設置於所述旋轉支持部61。In addition, the
藉由如上所述而構成,可將用以使工件保持部60旋轉(自轉)的機構(被旋轉驅動部62)配置在比較高的位置(旋轉輪40的上方),從而可使所述機構的維護性提高。By configuring as described above, the mechanism (rotationally driven portion 62) for rotating (rotating) the
又,本實施形態的濺鍍裝置1(真空處理裝置)包括所述工件保持部旋轉單元3。In addition, the sputtering apparatus 1 (vacuum processing apparatus) of the present embodiment includes the work holding
藉由如上所述而構成,藉由一面使工件保持部60旋轉,一面對工件W實施成膜處理,可抑制形成於工件W的薄膜的不均的產生。By configuring as described above, by rotating the
再者,本實施形態的旋轉輪40是旋轉部的一實施形態。
又,本實施形態的固定圓盤70是旋轉驅動部的一實施形態。
又,本實施形態的靶材6是濺鍍靶材的一實施形態。
又,本實施形態的馬達4是動力源的一實施形態。
又,本實施形態的旋轉軸20及工件保持部60是第一旋轉軸及第二旋轉軸的一實施形態。
又,本實施形態的濺鍍裝置1是真空處理裝置的一實施形態。In addition, the
以上,已說明本發明的一實施形態,但本發明並不限定於所述實施形態,在申請專利範圍內所記載的發明的技術思想範圍內可進行適當的變更。As mentioned above, one embodiment of the present invention has been described, but the present invention is not limited to the above-mentioned embodiment, and can be appropriately modified within the scope of the technical idea of the invention described in the scope of the patent application.
例如,在本實施形態中,已例示加工用的工具(切削加工、磨削加工、研磨等機械加工用的工具)作為工件W的一例,但本發明並不限定於此。即,成為成膜的對象的工件W可任意選擇。例如,作為工件W的其他例,可設想衝頭(punch)零件(用以鑽孔的刀)、壓鑄(die cast)用的模具的零件、切割器(cutter)的刀等各種物品。For example, in the present embodiment, machining tools (tools for machining, grinding, polishing, etc.) have been exemplified as an example of the workpiece W, but the present invention is not limited to this. That is, the workpiece W to be the target of film formation can be arbitrarily selected. For example, as other examples of the workpiece W, various items such as punch parts (a knife for drilling holes), die cast parts, cutter knives, and the like are conceivable.
又,工件W的形狀並無限定,可使用任意形狀的工件。例如,不僅亦可為在一個方向上延伸地長的棒狀、柱狀、稜柱狀的構件,而且亦可為具有複雜的立體形狀的構件。又,亦可將具有複雜的表面形狀的構件(例如,工具的刀尖等)設為工件W。In addition, the shape of the workpiece W is not limited, and a workpiece of any shape can be used. For example, it may not only be a rod-shaped, columnar, or prismatic member that extends in one direction, but may also be a member having a complicated three-dimensional shape. In addition, a member having a complicated surface shape (for example, the tip of a tool, etc.) may be used as the workpiece W.
又,在本實施形態中,在相對於旋轉軸20和靶材6傾斜的狀態下保持著工件W,但所述傾斜的角度及方向可任意變更。例如,藉由使旋轉輪40與貫通孔43b的傾斜角度不同的其他旋轉輪40更換,可變更工件保持部60的傾斜角度α(甚至工件W的傾斜角度α)。又,並不限於旋轉輪40,亦可藉由更換其他構件(例如,安裝構件50),來變更工件W的傾斜角度α。In addition, in this embodiment, the workpiece W is held in a state of being inclined with respect to the
又,在本實施形態中,已圖示說明如下的情形,即,旋轉輪40、設置於旋轉輪40的工件保持部60、及與工件保持部60相對應的固定圓盤70是上下排列兩個(兩層)而配置,但所述旋轉輪40等的個數並無限定。即,亦可在濺鍍裝置1設置僅一個、或設置三個以上的所述旋轉輪40等。In addition, in this embodiment, the following situation has been illustrated in the figure, that is, the
再者,在本實施形態中,將所述旋轉輪40等配置成自側方觀察時與上下鄰接的其他旋轉輪40等不重疊。例如,如圖4所示,設置於下方(下層)的旋轉輪40、工件保持部60及固定圓盤70是配置成位於較設置於上方(上層)的旋轉輪40等更靠下方的位置。如上所述,藉由以自側方觀察時不重疊的方式配置兩者,可提高自側方的維護性。In addition, in this embodiment, the said
又,在本實施形態中,已例示如下的構成,即,在工件保持部旋轉單元3的周圍配置靶材6及加熱器7,但本發明並不限定於此。例如,亦可進而設置離子槍(ion gun),而進行前處理(例如,打入氬離子而去除工件W表面的氧化物等)。又,亦可根據工件W的種類等,不使用加熱器7而進行成膜處理。In addition, in this embodiment, the configuration in which the
又,在本實施形態中,已例示馬達4作為動力源的一例,但本發明並不限於此。即,亦可使用其他動力源(發動機、致動器等)。In addition, in this embodiment, the motor 4 has been exemplified as an example of the power source, but the present invention is not limited to this. That is, other power sources (engine, actuator, etc.) may also be used.
又,工件保持部60的旋轉(公轉及自轉)的速度(轉速)可適當設定。例如,設定為:在工件保持部60藉由以旋轉軸20為中心的旋轉(公轉)而通過靶材6的正面的期間(與靶材6相向的期間),所述工件保持部60自轉至少一圈(360°)以上。藉此,可使來自靶材6的成膜材料,附著於工件W的整個區域,從而可進一步提高薄膜的密接性及均質性。In addition, the speed (rotation speed) of the rotation (revolution and rotation) of the
1:濺鍍裝置
2:成膜室
3:工件保持部旋轉單元
4:馬達
5:排氣裝置
6:靶材(濺鍍靶材)
7:加熱器
20:旋轉軸
21:外筒構件
21a:鍵槽
31:鍵構件
30:上部旋轉體
40:旋轉輪
41:凸台部
41a、43b、62a、70a、91:貫通孔
42:肋
43:外周部
43a:傾斜面
43c:堵塞構件
50:安裝構件
51:本體部
52:凸緣部
60:工件保持部
61:旋轉支持部
61a:保持部
61b:支持部
61c、72:軸承構件
62:被旋轉驅動部
70:固定圓盤
71:固定構件
80:限制部
81:第一限制構件
81a:左部
81b:中途部
81c:右部
81d:缺口部
82:第二限制構件
82a:支架
90:蓋體
α:傾斜角度
B:後方向
D:下方向
F:前方向
L:左方向
R:右方向
S1:工件保持步驟
S2:排氣步驟
S3:工件加熱步驟
S4:成膜步驟
U:上方向
W:工件
X:虛擬線1: Sputtering device
2: Film forming chamber
3: Rotating unit of workpiece holding part
4: motor
5: Exhaust device
6: Target (sputtering target)
7: heater
20: Rotation axis
21:
圖1是表示濺鍍裝置的概略結構的A-A剖面示意圖。 圖2是所述濺鍍裝置的概略結構的平面剖面示意圖。 圖3是表示成膜室的內部結構的前視剖面圖。 圖4是表示成膜室的內部結構的前視剖面放大圖。 圖5是表示工件保持部的周邊的前視剖面圖。 圖6是表示旋轉輪的構成的平面圖。 圖7是表示固定圓盤及限制部的構成的平面圖。 圖8是表示成膜品的製造方法的各步驟的圖。 圖9(a)是表示在工件未傾斜的狀態下實施成膜處理的情形的示意圖。圖9(b)是表示在工件傾斜的狀態下實施成膜處理的情形的示意圖。 圖10是表示關於本申請工具的壽命的評估的一例的圖。 圖11是表示關於本申請工具產生缺損的評估的一例的圖。Fig. 1 is a schematic cross-sectional view taken along A-A showing the schematic structure of the sputtering apparatus. Fig. 2 is a schematic plan sectional view of the general structure of the sputtering device. Fig. 3 is a front cross-sectional view showing the internal structure of the film forming chamber. Fig. 4 is an enlarged front cross-sectional view showing the internal structure of the film forming chamber. Fig. 5 is a front cross-sectional view showing the periphery of the workpiece holding portion. Fig. 6 is a plan view showing the structure of a rotating wheel. Fig. 7 is a plan view showing the configuration of a fixed disk and a restricting portion. Fig. 8 is a diagram showing each step of a method of manufacturing a film-formed product. Fig. 9(a) is a schematic diagram showing a state where a film forming process is performed in a state where the work is not tilted. Fig. 9(b) is a schematic diagram showing a state where a film forming process is performed in a state where the work is inclined. Fig. 10 is a diagram showing an example of the evaluation of the lifetime of the tool of the present application. FIG. 11 is a diagram showing an example of the evaluation of defects in the tool of the present application.
1:濺鍍裝置 1: Sputtering device
2:成膜室 2: Film forming chamber
3:工件保持部旋轉單元 3: Rotating unit of workpiece holding part
20:旋轉軸 20: Rotation axis
21:外筒構件 21: Outer cylinder member
21a:鍵槽 21a: Keyway
30:上部旋轉體 30: Upper rotating body
31:鍵構件 31: Key member
40:旋轉輪 40: rotating wheel
41:凸台部 41: boss
41a、70a:貫通孔 41a, 70a: Through hole
42:肋 42: rib
43:外周部 43: Peripheral
50:安裝構件 50: Installation components
60:工件保持部 60: Workpiece holding part
70:固定圓盤 70: fixed disc
71:固定構件 71: fixed component
72:軸承構件 72: bearing components
80:限制部 80: Restricted Department
81:第一限制構件 81: The first restriction member
82:第二限制構件 82: second restriction member
82a:支架 82a: bracket
90:蓋體 90: cover
α:傾斜角度 α: tilt angle
D:下方向 D: Downward
L:左方向 L: Left direction
R:右方向 R: Right direction
U:上方向 U: Upward
W:工件 W: Workpiece
X:虛擬線 X: virtual line
Claims (9)
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JP2019024033A JP6772315B2 (en) | 2019-02-14 | 2019-02-14 | Manufacturing method of film-forming products and sputtering equipment |
JP2019-024033 | 2019-02-14 |
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TW202045758A true TW202045758A (en) | 2020-12-16 |
TWI737048B TWI737048B (en) | 2021-08-21 |
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JP (1) | JP6772315B2 (en) |
KR (1) | KR102615201B1 (en) |
CN (1) | CN113330140B (en) |
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DE3611492A1 (en) * | 1986-04-05 | 1987-10-22 | Leybold Heraeus Gmbh & Co Kg | METHOD AND DEVICE FOR COATING TOOLS FOR CUTTING AND FORMING TECHNOLOGY WITH PLASTIC LAYERS |
JP2005208212A (en) * | 2004-01-21 | 2005-08-04 | Olympus Corp | Method for forming reflective film, and rotary polygon mirror |
US20090090617A1 (en) | 2005-07-14 | 2009-04-09 | Giauque Pierre H | Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films |
JP2007077469A (en) * | 2005-09-15 | 2007-03-29 | Nachi Fujikoshi Corp | Small diameter coating tool, and its manufacturing device |
JP2008013817A (en) * | 2006-07-06 | 2008-01-24 | Fujifilm Corp | Method for producing thin film through sputtering technique, and production apparatus therefor |
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JP2012066341A (en) * | 2010-09-24 | 2012-04-05 | Mitsubishi Materials Corp | Cutting tool made of surface-coated cubic boron nitride-based ultra-high-pressure sintered material |
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JP5793737B1 (en) * | 2014-07-10 | 2015-10-14 | ナルックス株式会社 | Vapor deposition equipment |
WO2016152395A1 (en) * | 2015-03-20 | 2016-09-29 | 芝浦メカトロニクス株式会社 | Film-forming apparatus and film-forming-work manufacturing method |
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KR102615201B1 (en) | 2023-12-19 |
WO2020166167A1 (en) | 2020-08-20 |
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CN113330140A (en) | 2021-08-31 |
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