TW202043508A - Method for cleaning a vacuum system, method for vacuum processing a substrate, and apparatus for vacuum processing a substrate - Google Patents

Method for cleaning a vacuum system, method for vacuum processing a substrate, and apparatus for vacuum processing a substrate Download PDF

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TW202043508A
TW202043508A TW109103626A TW109103626A TW202043508A TW 202043508 A TW202043508 A TW 202043508A TW 109103626 A TW109103626 A TW 109103626A TW 109103626 A TW109103626 A TW 109103626A TW 202043508 A TW202043508 A TW 202043508A
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vacuum chamber
vacuum
cleaning
substrate
ozone
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曼努埃爾 瑞德克
湯瑪士 爵伯勒
渥福剛 布許貝克
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美商應用材料股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/08Cleaning containers, e.g. tanks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A method for cleaning a vacuum chamber, particularly a vacuum chamber used in the manufacture of OLED devices, is described, The method includes igniting a UV source within the vacuum chamber; and adjusting a pressure in the vacuum chamber to a vacuum condition providing a mixture of ozone and active radicals from a process gas in the vacuum chamber.

Description

用於清潔真空系統的方法、用於真空處理基板的方法以及用於真空處理基板的設備Method for cleaning vacuum system, method for vacuum processing substrate, and equipment for vacuum processing substrate

本揭露的實施例係有關於用於清潔真空系統的方法、用於真空處理基板的方法以及用於真空處理基板的設備。本揭露的實施例係特別涉及用於製造有機發光二極體(OLED)裝置的方法和裝置。The embodiment of the present disclosure relates to a method for cleaning a vacuum system, a method for vacuum processing a substrate, and an apparatus for vacuum processing a substrate. The embodiments of the present disclosure particularly relate to methods and devices for manufacturing organic light emitting diode (OLED) devices.

用於在基板上進行層沉積(layer deposition)之技術包括例如熱蒸發、物理氣相沉積(PVD)和化學氣相沉積(CVD)。塗覆的基板可用於多種應用和多種技術領域。舉例而言,塗覆的基板可用於有機發光二極體(OLED)裝置的領域。有機發光二極體可用於製造電視螢幕、電腦監視器、行動電話、其他手持式裝置等,以顯示信息。例如有機發光二極體顯示器之類的有機發光二極體裝置可包括位於沉積在基板上的兩個電極之間的一或多層有機材料。Techniques for layer deposition on a substrate include, for example, thermal evaporation, physical vapor deposition (PVD), and chemical vapor deposition (CVD). The coated substrate can be used in a variety of applications and a variety of technical fields. For example, the coated substrate can be used in the field of organic light emitting diode (OLED) devices. Organic light-emitting diodes can be used to make TV screens, computer monitors, mobile phones, and other handheld devices to display information. An organic light emitting diode device such as an organic light emitting diode display may include one or more layers of organic materials between two electrodes deposited on a substrate.

有機發光二極體裝置可包括幾種有機材料之堆疊,其係例如蒸發於處理設備的真空腔室中。真空腔室內之真空條件和真空腔室內之污染物會影響沉積材料層之質量及使用這些材料層所製造之有機發光二極體裝置。The organic light emitting diode device may include a stack of several organic materials, which are, for example, evaporated in the vacuum chamber of the processing equipment. The vacuum conditions in the vacuum chamber and the contaminants in the vacuum chamber will affect the quality of the deposited material layers and the organic light emitting diode devices manufactured using these material layers.

舉例而言,OLED裝置的壽命會受有機污染的影響。污染可能源自真空內部使用的部件和材料和/或維護期間的交叉污染。在製造之前或製造過程中進行清潔(即去除污染物)係可穩定地、高質量地製造有機發光二極體裝置。For example, the lifetime of OLED devices may be affected by organic pollution. Contamination may originate from parts and materials used inside the vacuum and/or cross-contamination during maintenance. Cleaning (ie, removing contaminants) before or during the manufacturing process can produce the organic light emitting diode device stably and with high quality.

適當清潔以達到適於製造的污染水平(預防性維護(PM)恢復)的持續期間或時間係為關鍵資源。對於製造系統的所有者而言,每分鐘的工具停機時間代價很高。因此,提高清潔效率並減少清潔時間可降低製造成本。The duration or time of proper cleaning to achieve a pollution level suitable for manufacturing (preventive maintenance (PM) recovery) is a key resource. For owners of manufacturing systems, tool downtime per minute is very costly. Therefore, improving cleaning efficiency and reducing cleaning time can reduce manufacturing costs.

遠程臭氧產生器(remote ozone generators)係可用於清潔,例如清潔顯示器製造中使用的大容積腔室。由於臭氧的使用壽命長,因此可使用遠程源(亦即在待清潔表面附近不產生臭氧的源)。Remote ozone generators (remote ozone generators) can be used for cleaning, such as cleaning large-volume chambers used in display manufacturing. Due to the long service life of ozone, remote sources (that is, sources that do not generate ozone near the surface to be cleaned) can be used.

因此,需要一種能夠改善真空腔室內部的真空條件並清潔真空腔室的方法和設備。本揭露之目的係特別地為減少污染,以使得可提高沉積在基板上的有機材料層的質量。Therefore, there is a need for a method and apparatus that can improve the vacuum condition inside the vacuum chamber and clean the vacuum chamber. The purpose of this disclosure is particularly to reduce pollution, so that the quality of the organic material layer deposited on the substrate can be improved.

鑑於上述情況,提供用於清潔真空腔室的方法、清潔真空系統(特別是用於製造有機發光二極體(OLED)裝置的方法、真空處理基板的方法以及用於真空處理基板的設備。本揭露的其他方面、優點及特徵係明顯可見於申請專利範圍、說明書和圖式。In view of the foregoing, a method for cleaning a vacuum chamber, a cleaning vacuum system (especially a method for manufacturing an organic light-emitting diode (OLED) device, a method for vacuum processing a substrate, and an apparatus for vacuum processing a substrate are provided. Other aspects, advantages and features disclosed are clearly visible in the scope of patent application, description and drawings.

根據一實施例,提供了一種用於清潔一真空腔室(特別是用於製造有機發光二極體裝置)的方法,方法包括:在真空腔室內點燃(igniting)一紫外線源;以及將真空腔室中的一壓力調節至一真空狀態,從而從真空腔室中的一處理氣體中提供臭氧和複數個活性自由基(active radicals)之一混合物。According to an embodiment, there is provided a method for cleaning a vacuum chamber (especially for manufacturing an organic light emitting diode device). The method includes: igniting an ultraviolet source in the vacuum chamber; and igniting the vacuum chamber A pressure in the chamber is adjusted to a vacuum state, thereby providing a mixture of ozone and a plurality of active radicals from a processing gas in the vacuum chamber.

根據一實施例,提供了一種用於真空處理一基板以製造有機發光二極體裝置的方法。方法包括根據本文所述之任何實施例的清潔方法,以及在基板上沉積一或多層有機材料。According to an embodiment, there is provided a method for vacuum processing a substrate to manufacture an organic light emitting diode device. Methods include cleaning methods according to any of the embodiments described herein, and depositing one or more layers of organic materials on the substrate.

根據一實施例,提供一種用於真空處理一基板(特別是用於製造有機發光二極體裝置)的設備。設備包括一真空腔室;一紫外線源,位於真空腔室內;一真空幫浦,用於將真空腔室抽真空;一控制器,用於將一壓力調節至一真空狀態,從而從真空腔室中的一處理氣體中提供臭氧和複數個活性自由基之一混合物。According to an embodiment, an apparatus for vacuum processing a substrate (especially for manufacturing an organic light emitting diode device) is provided. The equipment includes a vacuum chamber; an ultraviolet source located in the vacuum chamber; a vacuum pump for evacuating the vacuum chamber; and a controller for adjusting a pressure to a vacuum state, thereby removing from the vacuum chamber A mixture of ozone and a plurality of active free radicals is provided in one of the processing gases.

現在將詳細參照本揭露之各種實施例,在圖式中繪示出實施例之一或多個示例。在圖式的以下敘述中,相同的元件符號係指相同的組件。一般而言,僅描述關於各個實施例的差異。每個示例皆具有本揭露之解釋,且不意味著限制本揭露。此外,作為一實施例之部分所繪示或敘述之特徵可用於其他實施例或與其他實施例結合使用以產生又一實施例。此係代表,敘述係包括這樣的修改和變化。Now referring to the various embodiments of the present disclosure in detail, one or more examples of the embodiments are shown in the drawings. In the following description of the drawings, the same reference numerals refer to the same components. Generally speaking, only the differences regarding the respective embodiments are described. Each example has an explanation of the disclosure, and is not meant to limit the disclosure. In addition, the features illustrated or described as part of one embodiment can be used in other embodiments or used in combination with other embodiments to produce yet another embodiment. Representative of this department, the narrative department includes such modifications and changes.

真空腔室內之真空條件和污染物的量,特別是有機污染物,可以極大地影響沉積在基板上的材料層的質量。特別地,對於有機發光二極體大量生產而言,真空部件的清潔度係極大地影響所製造的裝置的壽命。即使是電拋光的表面(electro-polished surfaces),對於有機發光二極體(OLED)裝置的製造而言仍然可能太髒。本揭露的一些實施例係使用臭氧來清潔真空腔室和/或真空腔室內的部件。 舉例而言,真空清潔可在預清潔程序之後進行,例如作真空系統的最終清潔程序。本揭露的實施例係有關於超淨真空(UCV)清潔。The vacuum conditions in the vacuum chamber and the amount of pollutants, especially organic pollutants, can greatly affect the quality of the material layer deposited on the substrate. In particular, for mass production of organic light-emitting diodes, the cleanliness of vacuum components greatly affects the life of the manufactured devices. Even electro-polished surfaces may still be too dirty for the manufacture of organic light emitting diode (OLED) devices. Some embodiments of the present disclosure use ozone to clean the vacuum chamber and/or components in the vacuum chamber. For example, the vacuum cleaning can be performed after the pre-cleaning process, such as the final cleaning process of the vacuum system. The embodiment of the present disclosure relates to ultra-clean vacuum (UCV) cleaning.

如上所述,遠程臭氧發生器可用於清潔大容積腔室。由於臭氧的使用壽命長,因此可在遠處(即遠離待清潔之表面)產生臭氧。 本揭露的發明人已經發現,如果結合臭氧清潔和紫外線光來用於直接清潔(即原位臭氧產生(in situ ozone creation)),則可達成一協同作用。藉由調整製程參數,可產生臭氧和活性自由基(例如氧自由基)的混合物,以提高清潔效率。As mentioned above, remote ozone generators can be used to clean large-volume chambers. Due to the long service life of ozone, ozone can be generated at a distance (that is, away from the surface to be cleaned). The inventors of the present disclosure have discovered that if ozone cleaning and ultraviolet light are combined for direct cleaning (ie in situ ozone creation), a synergistic effect can be achieved. By adjusting the process parameters, a mixture of ozone and active free radicals (such as oxygen free radicals) can be generated to improve cleaning efficiency.

相較於在有機發光二極體工業中使用的常規清潔策略,例如「在真空下烘烤」(bake-out under vacuum),本揭露的實施例不是基於升高的溫度來減少和/或去除真空腔室內的有機污染物。 特別是在系統內部具有溫度敏感組件(例如電子設備)時,烘烤不是一個有益的選擇。 此外,相較於常規策略,根據本揭露的實施例的臭氧,活性基團(例如氧自由基)和紫外線光之組合的使用係顯示出改善的清潔效率,並且特別是並不具有烘烤程序。Compared to conventional cleaning strategies used in the organic light-emitting diode industry, such as "bake-out under vacuum", the embodiments of the present disclosure are not based on increased temperature to reduce and/or remove Organic contaminants in the vacuum chamber. Especially when there are temperature-sensitive components (such as electronic devices) inside the system, baking is not a beneficial option. In addition, compared to the conventional strategy, the use of the combination of ozone, active groups (such as oxygen radicals) and ultraviolet light according to the embodiments of the present disclosure shows improved cleaning efficiency, and in particular does not have a baking process .

根據本揭露的一些實施例,提供一種用於清潔真空腔室的方法,特別是一種用於清潔製造有機發光二極體裝置的真空腔室的方法。此方法包括在真空腔室內點燃(igniting)至少一紫外線源,例如紫外線燈,並將真空腔室內的一壓力調節至一真空狀態,從而從真空腔室內的一處理氣體中提供臭氧和複數個活性自由基(active radicals)的一混合物。According to some embodiments of the present disclosure, there is provided a method for cleaning a vacuum chamber, in particular, a method for cleaning a vacuum chamber for manufacturing an organic light emitting diode device. The method includes igniting at least one ultraviolet source, such as an ultraviolet lamp, in a vacuum chamber, and adjusting a pressure in the vacuum chamber to a vacuum state, thereby providing ozone and a plurality of activities from a processing gas in the vacuum chamber A mixture of active radicals.

腔室或表面的清潔度例如可藉由接觸角測量來確定。 舉例而言,在大氣壓下進行臭氧清潔過程可能導致接觸角減少5°到10°,持續約一小時或更短的清潔時間,並在暴露於清潔處理的預污染晶片(pre-contaminated wafer)上進行測量。 將原位臭氧清潔(in-situ ozone cleaning)(即在真空腔室內產生臭氧)與真空腔室中之減壓和/或特定波長範圍內之紫外線結合起來,可產生臭氧清潔與由臭氧產生的活性物質或自由基之一協同作用。因此,接觸角之減少可顯著地改善,例如提高兩倍或更多倍。The cleanliness of the chamber or the surface can be determined by contact angle measurement, for example. For example, performing an ozone cleaning process at atmospheric pressure may result in a reduction in contact angle of 5° to 10°, a cleaning time of about one hour or less, and exposure to pre-contaminated wafers that have been cleaned. Take measurements. Combining in-situ ozone cleaning (i.e. generating ozone in a vacuum chamber) with decompression in the vacuum chamber and/or ultraviolet rays within a specific wavelength range can produce ozone cleaning and ozone generation One of the active substances or free radicals acts synergistically. Therefore, the reduction in contact angle can be significantly improved, for example, by two or more times.

根據本揭露的實施方式,可從臭氧或氧氣產生活性自由基。根據一些實施例,紫外線源或紫外線燈可發射特定波長或波長範圍內的輻射(紫外線)。舉例而言,紫外線源或紫外線燈可以170nm至200nm之波長來發射輻射,例如約182nm至185nm之波長。在此波長下的輻射可能會從氧氣中產生臭氧。根據另外的附加或替代修改,紫外線源或紫外線燈可以230nm至270nm之波長來發射輻射,例如約250nm至253nm之波長。在此波長下的輻射可能會觸發臭氧分解係為氧氣和活性物質。According to the embodiments of the present disclosure, active free radicals can be generated from ozone or oxygen. According to some embodiments, an ultraviolet source or an ultraviolet lamp may emit radiation (ultraviolet rays) of a specific wavelength or wavelength range. For example, an ultraviolet source or ultraviolet lamp can emit radiation at a wavelength of 170 nm to 200 nm, for example, a wavelength of about 182 nm to 185 nm. Radiation at this wavelength may generate ozone from oxygen. According to additional or alternative modifications, the ultraviolet source or ultraviolet lamp can emit radiation at a wavelength of 230 nm to 270 nm, for example, a wavelength of about 250 nm to 253 nm. Radiation at this wavelength may trigger the decomposition of ozone into oxygen and active substances.

可根據待清潔的真空腔室中活性物質(active species)之分佈策略來進一步敘述本揭露的一些實施例。相反於基於使清潔過程的活性物質的數量最大化之工業標準清潔程序的策略,本揭露的實施例係減少了參與清潔程序的活性物質之數目。然而,藉由改變真空腔室中活性物質之分佈和/或藉由改變臭氧和活性自由基之混合物,可提高活性物質的效率。在真空腔室(即封閉的空間)中產生的臭氧會產生臭氧和活性自由基,例如靠近紫外線燈的氧自由基。在源處產生的高濃度臭氧可立即吸收用於產生氧自由基之輻射。因此,可限制真空腔室中紫外線光之抵達,特別是限制用於處理用於顯示器製造的大面積基板之大型真空腔室中紫外線光之抵達。根據本揭露的實施例,降低真空腔室中的壓力以降低可利用的氧氣之密度以產生臭氧。因此,增加了紫外線光之抵達(即平均自由程),此係導致提高的清潔效率。Some embodiments of the present disclosure can be further described according to the distribution strategy of active species in the vacuum chamber to be cleaned. Contrary to the strategy of industry standard cleaning procedures based on maximizing the number of active substances in the cleaning process, the embodiments of the present disclosure reduce the number of active substances participating in the cleaning process. However, by changing the distribution of the active material in the vacuum chamber and/or by changing the mixture of ozone and active free radicals, the efficiency of the active material can be improved. The ozone generated in the vacuum chamber (ie, enclosed space) generates ozone and active free radicals, such as oxygen free radicals near the ultraviolet lamp. The high concentration of ozone generated at the source can immediately absorb the radiation used to generate oxygen free radicals. Therefore, the arrival of ultraviolet light in the vacuum chamber can be restricted, especially the arrival of ultraviolet light in a large vacuum chamber used for processing large-area substrates for display manufacturing. According to the embodiment of the present disclosure, the pressure in the vacuum chamber is reduced to reduce the density of available oxygen to generate ozone. As a result, the arrival of ultraviolet light (ie, mean free path) is increased, which results in improved cleaning efficiency.

根據本揭露的實施例,在真空腔室內提供輻射波長,以允許臭氧產生以及從產生的臭氧分別地產生活性物質或自由基。紫外線的平均自由程長度係適合於腔室的幾何形狀和/或腔室的尺寸,以使紫外線可抵達真空腔室內的表面,從而提供額外的清潔效果。According to the embodiment of the present disclosure, the radiation wavelength is provided in the vacuum chamber to allow ozone generation and to generate active substances or radicals separately from the generated ozone. The mean free path length of the ultraviolet rays is suitable for the geometry of the chamber and/or the size of the chamber, so that the ultraviolet rays can reach the surface of the vacuum chamber, thereby providing an additional cleaning effect.

舉例而言,如果產生活性物質的紫外線(例如波長約251nm的光)抵達被清潔的表面,則於受汙染表面附近觸發來自臭氧的活性物質(例如氧自由基)之生成。活性物質在重組之前可能會與表面的污染物發生反應。此外,降低的壓力係降低了高能紫外線輻射的吸收,此係可能進一步導致黏附在待清潔表面上之分子解離。For example, if ultraviolet rays (such as light with a wavelength of about 251 nm) that generate active materials reach the surface to be cleaned, the generation of active materials (such as oxygen radicals) from ozone is triggered near the contaminated surface. The active substance may react with contaminants on the surface before reconstitution. In addition, the reduced pressure reduces the absorption of high-energy ultraviolet radiation, which may further cause the molecules attached to the surface to be cleaned to dissociate.

根據本文所述之實施例,係可提供抵達待清潔表面之臭氧、活性自由基和抵達待清潔表面之紫外線的組合。因此,在真空腔室中的紫外線源可提供多種效果的協同效果,其中在清潔期間提供降低的壓力。According to the embodiments described herein, a combination of ozone, active free radicals and ultraviolet rays reaching the surface to be cleaned can be provided. Therefore, the ultraviolet source in the vacuum chamber can provide a synergistic effect of multiple effects, in which reduced pressure is provided during cleaning.

對於有機發光二極體腔室,可提供3 m之平均壁到壁的距離(average wall-to-wall distance)。因此,活性物質的平均自由程長度可小於3m,以確保紫外線光之有益平均自由程長度,可提供5x10-4 mbar至2x10-2 mbar的壓力。舉例而言,平均壁到壁的距離(average wall-to-wall distance)或壁的平均距離(average distance of the walls)係可定義如下。真空腔室係通常包括一底壁和具有垂直距離的一頂壁。此外,真空腔室係通常包括具有第一水平距離之兩個相對側壁和具有第二水平距離之另外兩個相對側壁。舉例而言,壁的平均距離可係為垂直距離、第一水平距離和第二水平距離之平均值。上面示例性說明係指長方體形狀的真空腔室。對於圓柱形腔室或具有梯形橫截面的腔腔室,可以類似方式來計算平均距離。For organic light-emitting diode chambers, an average wall-to-wall distance of 3 m can be provided. Therefore, the mean free path length of the active material can be less than 3m to ensure the beneficial mean free path length of ultraviolet light, which can provide a pressure of 5x10 -4 mbar to 2x10 -2 mbar. For example, the average wall-to-wall distance or the average distance of the walls can be defined as follows. The vacuum chamber system usually includes a bottom wall and a top wall with a vertical distance. In addition, the vacuum chamber usually includes two opposite side walls with a first horizontal distance and two other opposite side walls with a second horizontal distance. For example, the average distance of the wall may be the average of the vertical distance, the first horizontal distance, and the second horizontal distance. The above exemplary description refers to a vacuum chamber in the shape of a rectangular parallelepiped. For cylindrical chambers or chambers with a trapezoidal cross section, the average distance can be calculated in a similar manner.

根據可與本文描述的其他實施例結合之一些實施例,提供一種用於清潔真空腔室,特別是一種用於清潔製造OLED裝置的真空腔室的方法。本揭露的實施例還可包括確定真空腔室之壁的平均距離,其中根據平均距離來調節壓力。According to some embodiments that can be combined with other embodiments described herein, there is provided a method for cleaning a vacuum chamber, in particular, a method for cleaning a vacuum chamber for manufacturing an OLED device. Embodiments of the present disclosure may further include determining an average distance of the walls of the vacuum chamber, wherein the pressure is adjusted according to the average distance.

第1圖係繪示一種用於清潔真空腔室的方法100的流程圖,根據本文描述的實施例此真空腔室係用於例如在製造OLED裝置中。清潔可有關於真空腔室的表面,特別是真空腔室的內表面以及在真空腔室中的部件的表面。FIG. 1 is a flowchart of a method 100 for cleaning a vacuum chamber, which is used in, for example, manufacturing OLED devices according to the embodiments described herein. Cleaning may be related to the surface of the vacuum chamber, particularly the inner surface of the vacuum chamber and the surface of the components in the vacuum chamber.

方法100包括在真空腔室內點燃一紫外線源(方塊110)。此外,真空腔室中的壓力係調節(方塊120)至一壓力,從而從真空腔室中的一處理氣體中提供臭氧和複數個活性自由基的一混合物。根據可與本文描述的其他實施例結合之一些實施例,處理氣體包括氧氣或可係為氧氣。在操作真空系統之前,例如紫外線、臭氧和活性物質之清潔可係為最後的清潔程序,例如在基板上沉積一或多種有機材料的層。詞語“最後”應理解為在電漿清潔之後不執行進一步的清潔程序。The method 100 includes igniting an ultraviolet source in a vacuum chamber (block 110). In addition, the pressure in the vacuum chamber is adjusted (block 120) to a pressure so as to provide a mixture of ozone and a plurality of active radicals from a processing gas in the vacuum chamber. According to some embodiments that may be combined with other embodiments described herein, the process gas includes oxygen or may be oxygen. Before operating the vacuum system, cleaning such as ultraviolet rays, ozone, and active materials can be the final cleaning process, such as depositing one or more layers of organic materials on the substrate. The word "final" should be understood to mean that no further cleaning procedures are performed after plasma cleaning.

用於清潔至少部分真空系統之預清潔和使用例如紫外線源清潔至少部分真空腔室之電漿清潔係可用於真空系統的各種部件。在一些實施例中,預清潔和紫外線 /臭氧清潔係分別地包括真空腔室的清潔。舉例而言,清潔分別地包括對真空腔室之一或多個內壁的清潔。附加地或替代地,清潔可包括清潔真空系統的真空腔室內的一或多個部件。一或多個部件可選自機械部件、可移動部件、驅動器、閥及其任意組合所組成的群。舉例而言,機械部件可為真空腔室內部的任何部件,例如用於操作真空系統的可移動部件。示例性可移動部件包括但不限於閥,例如閘閥。驅動器可包括用於在真空系統中運輸基板和/或載體之驅動器、用於基板和/或遮罩對準之驅動器或致動器、用於分隔相鄰的真空區域或腔室之例如閘閥的閥之驅動器等。The pre-cleaning for cleaning at least part of the vacuum system and the plasma cleaning system for cleaning at least part of the vacuum chamber using, for example, an ultraviolet source can be used for various parts of the vacuum system. In some embodiments, the pre-cleaning and ultraviolet/ozone cleaning systems respectively include cleaning of the vacuum chamber. For example, cleaning includes cleaning one or more inner walls of the vacuum chamber, respectively. Additionally or alternatively, cleaning may include cleaning one or more components within the vacuum chamber of the vacuum system. One or more parts may be selected from the group consisting of mechanical parts, movable parts, actuators, valves, and any combination thereof. For example, the mechanical part may be any part inside the vacuum chamber, such as a movable part used to operate the vacuum system. Exemplary movable components include, but are not limited to, valves, such as gate valves. The driver may include a driver for transporting the substrate and/or carrier in the vacuum system, a driver or actuator for aligning the substrate and/or mask, and a gate valve for separating adjacent vacuum areas or chambers. Valve driver, etc.

根據可與本文所述之其他實施例結合之一些實施例,可在真空系統或真空系統的一部分的維護程序之後執行清潔方法(例如方法100),和/或避免在操作過程中再次污染。特別是,維護後的預清洗(例如濕法清洗)可能不足以實現有機發光二極體大規模生產所需的適當清潔度。清潔程序(即預清潔之後的紫外線/臭氧清潔)可確保清潔度水平,此清潔度水平可改善在沉積過程(例如熱蒸發過程)中沉積的有機材料層之質量。紫外線/臭氧清潔還可用於控制在生產或系統閒置期間由於聚合物(O型圈、電纜等)放氣(outgassing)而引起的再污染。According to some embodiments that can be combined with other embodiments described herein, the cleaning method (such as method 100) can be performed after the maintenance procedure of the vacuum system or part of the vacuum system, and/or avoid recontamination during operation. In particular, pre-cleaning after maintenance (such as wet cleaning) may not be sufficient to achieve the proper cleanliness required for mass production of organic light-emitting diodes. The cleaning process (ie, UV/ozone cleaning after pre-cleaning) can ensure a cleanliness level that can improve the quality of the organic material layer deposited during the deposition process (eg, thermal evaporation process). Ultraviolet/ozone cleaning can also be used to control re-contamination due to outgassing of polymers (O-rings, cables, etc.) during production or system idle periods.

詞語“維護程序”可理解為不操作真空系統以能夠執行各種任務,例如真空系統或真空系統的一部分之維修和/或初始安裝。維護程序可例如以預定的維護間隔週期性地執行。The term "maintenance program" can be understood as not operating the vacuum system to be able to perform various tasks, such as maintenance and/or initial installation of the vacuum system or a part of the vacuum system. The maintenance program may be executed periodically, for example, at predetermined maintenance intervals.

在一些實施例中,清潔係於真空系統的一或多個(真空)腔室中執行,此真空腔室係選自負載鎖定腔室、清潔腔室、真空沉積腔室、真空處理腔室、轉移腔室、路由模組及其任何組合所組成的群。In some embodiments, the cleaning is performed in one or more (vacuum) chambers of the vacuum system, and the vacuum chamber is selected from a load lock chamber, a cleaning chamber, a vacuum deposition chamber, a vacuum processing chamber, A group consisting of transfer chambers, routing modules and any combination thereof.

如上所述,本揭露的實施例係有關於低壓的清潔程序,特別是可適合於待清潔的真空腔室的尺寸和幾何形狀之一低壓。在大面積基板上進行例如有機發光二極體顯示器的製造之類的顯示器製造。舉例而言,基板的尺寸係可為0.67 m2 或更大,例如1 m2 或更大。As described above, the embodiments of the present disclosure are related to a low-pressure cleaning procedure, and in particular, it is suitable for a low-pressure one of the size and geometry of the vacuum chamber to be cleaned. Display manufacturing such as organic light emitting diode display manufacturing is performed on a large-area substrate. For example, the size of the substrate may be 0.67 m 2 or more, such as 1 m 2 or more.

本文所述之系統可用於在大面積基板上蒸發,例如用於OLED顯示器製造。具體地,用於根據本文所述的實施例的系統之基板係為大面積基板。舉例而言,大面積的基材或載體可為相當於約0.67m²(0.73 x 0.92m)的表面積之GEN 4.5、相當於約1.4m²(1.1 m x 1.3 m)的表面積之GEN 5,相當於約2.7m²(1.5 m x 1.8 m)之GEN 6,相當於約4.29m²(1.95 m x 2.2 m) 的表面積之GEN 7.5,相當於約5.7 m² (2.2 m x 2.5 m)之GEN 8.5,甚至是8.7 m² (2.85 m x 3.05 m)之GEN 10。甚至更大之世代,例如GEN 11和GEN 12及對應的表面積也可類似地實施。在有機發光二極體顯示器製造中也可提供GEN世代之一半尺寸。The system described herein can be used for evaporation on large-area substrates, for example in the manufacture of OLED displays. Specifically, the substrate used in the system according to the embodiments described herein is a large area substrate. For example, a large-area substrate or carrier can be GEN 4.5 equivalent to a surface area of about 0.67m² (0.73 x 0.92m), GEN 5 equivalent to a surface area of about 1.4m² (1.1 mx 1.3 m), equivalent to about GEN 6 of 2.7m² (1.5 mx 1.8 m) is equivalent to GEN 7.5 with a surface area of about 4.29m² (1.95 mx 2.2 m), equivalent to GEN 8.5 of about 5.7 m² (2.2 mx 2.5 m), or even 8.7 m² (2.85) mx 3.05 m) of GEN 10. Even larger generations such as GEN 11 and GEN 12 and corresponding surface areas can be implemented similarly. In the manufacture of organic light-emitting diode displays, one-and-a-half sizes of the GEN generation can also be provided.

根據本揭露的實施例,可根據腔室的尺寸來提供用於藉由活性物質和紫外線輔助的臭氧進行清潔之改善的壓力水平。因此,較低的壓力可有利地用於較大的腔室。對於較小的腔室而言,壓力可能會更高,對應於較短的平均自由程長度。According to the embodiments of the present disclosure, an improved pressure level for cleaning by active materials and ultraviolet-assisted ozone can be provided according to the size of the chamber. Therefore, lower pressures can be advantageously used for larger chambers. For smaller chambers, the pressure may be higher, corresponding to a shorter mean free path length.

根據可與本文描述的其他實施例結合之又一些實施例,發明人的發現可類似地應用於半導體工業中的真空腔室,例如晶片處理或晶片檢查。由於腔室通常較小,因此壓力可能較高。涉及根據平均腔室壁距離最佳化平均自由程長度之特定實施例係適用於較小的真空腔室。此外,附加地或可替代地,可進一步將改善或最佳化其他清潔參數應用於半導體製造。According to other embodiments that can be combined with other embodiments described herein, the inventor's findings can be similarly applied to vacuum chambers in the semiconductor industry, such as wafer processing or wafer inspection. Since the chamber is usually smaller, the pressure may be higher. The specific embodiment involving optimizing the mean free path length based on the average chamber wall distance is suitable for smaller vacuum chambers. In addition, additionally or alternatively, other cleaning parameters can be further improved or optimized for semiconductor manufacturing.

特別是對於有機發光二極體裝置的製造,真空腔室中的真空質量和真空腔室中的污染強烈影響裝置性能。特別地,製造裝置的壽命可能由於污染而極大地降低。 因此,真空腔室內的表面需要經常清潔。 處理腔室、製造腔室、轉移腔室、運輸腔室、儲存腔室和裝配腔室對於污染係為敏感的。人們與這種腔室的內表面之相互作用係引入了有機和非有機污染物,此有機和非有機污染物係被腔室的表面和/或部件的表面吸收。Especially for the manufacture of organic light emitting diode devices, the vacuum quality in the vacuum chamber and the contamination in the vacuum chamber strongly affect the performance of the device. In particular, the life of the manufacturing device may be greatly reduced due to contamination. Therefore, the surface inside the vacuum chamber needs to be cleaned frequently. The processing chamber, manufacturing chamber, transfer chamber, transport chamber, storage chamber and assembly chamber are sensitive to contamination. The interaction between people and the inner surface of such a chamber introduces organic and non-organic pollutants, and this organic and non-organic pollutant is absorbed by the surface of the chamber and/or the surface of the components.

儘管由操作人員進行內表面的濕法清潔程序可能是費時且費力的,但是濕法清潔對於去除微觀污染(例如溶劑使用、微粒等)係為有益的。此外,操作人員可能將額外的有機污染物引入系統,並且操作人員可能無法有效地獲得某些服務。Although the wet cleaning procedure of the inner surface performed by the operator may be time-consuming and laborious, the wet cleaning is beneficial for removing microscopic contamination (such as solvent usage, particles, etc.). In addition, the operator may introduce additional organic pollutants into the system, and the operator may not be able to effectively obtain certain services.

根據本揭露的實施例,可引入濕法清潔程序以去除微觀污染。根據本文所述之實施例,可在濕法清潔程序或另一預清潔程序之後提供原位清潔程序。According to the embodiments of the present disclosure, a wet cleaning process can be introduced to remove microscopic pollution. According to the embodiments described herein, the in-situ cleaning process can be provided after the wet cleaning process or another pre-cleaning process.

第3圖係繪示處理系統300的一部分,用於例如在基板上真空沉積以製造根據本文所述實施例的有機發光二極體裝置。FIG. 3 shows a part of a processing system 300 used for vacuum deposition on a substrate, for example, to manufacture an organic light emitting diode device according to the embodiments described herein.

在第3圖中,處理模組310係連接至路由模組(routing module)320。維護模組340可耦接至處理模組。運輸模組330係提供沿著從第一路由模組到第二路由模組(未示出)之傳輸方向的路徑。每個模組可具有一或多個真空腔室。此外,運輸模組可提供兩個或更多個軌道,例如四個傳輸軌道352,其中可將一載體從此些路由模組之一者中移出。如第3圖所示,沿著路由模組和/或運輸模組之傳輸方向可為一第一方向。可將另外的路由模組連接至另外的處理模組(未示出)。如第3圖所示,此些閘閥305可分別地沿著第一方向設置在相鄰模組或真空腔室之間,例如在運輸模組和相鄰的路由模組之間且沿著一第二方向。閘閥305可關閉或打開以在真空腔室之間提供一真空密封。閘閥之存在係可能取決於處理系統之應用,例如取決於沉積在基板上的有機材料層的種類、數量和/或順序。因此,可在傳送腔室之間設置一或多個閘閥。In Figure 3, the processing module 310 is connected to a routing module 320. The maintenance module 340 can be coupled to the processing module. The transportation module 330 provides a path along the transmission direction from the first routing module to the second routing module (not shown). Each module can have one or more vacuum chambers. In addition, the transportation module may provide two or more tracks, such as four transportation tracks 352, in which a carrier can be removed from one of these routing modules. As shown in Figure 3, the transmission direction along the routing module and/or the transportation module can be a first direction. Another routing module can be connected to another processing module (not shown). As shown in Figure 3, these gate valves 305 can be respectively arranged between adjacent modules or vacuum chambers along the first direction, such as between the transportation module and the adjacent routing module and along a line. The second direction. The gate valve 305 can be closed or opened to provide a vacuum seal between the vacuum chambers. The existence of the gate valve may depend on the application of the processing system, for example, on the type, number and/or order of the organic material layer deposited on the substrate. Therefore, one or more gate valves can be provided between the transfer chambers.

根據典型的實施例,第一傳輸軌道352和第二傳輸軌道352係配置成用於非接觸式傳輸基板載體和/或遮罩載體以減少真空腔室中之污染。特別地,第一傳輸軌道和第二傳輸軌道可包括保持組件和驅動結構,配置成用於基板載體和/或遮罩載體之非接觸式位移。According to a typical embodiment, the first transfer track 352 and the second transfer track 352 are configured for non-contact transfer of substrate carriers and/or mask carriers to reduce contamination in the vacuum chamber. In particular, the first transfer track and the second transfer track may include a holding assembly and a driving structure, which are configured for non-contact displacement of the substrate carrier and/or the mask carrier.

如第3圖所示,在第一路由模組320中,兩個基板301係被旋轉。兩個傳輸軌道(基板位於其上)係旋轉以在第一方向上對準。 因此,在傳輸軌道上的兩個基板係設置在要被傳送至運輸模組和相鄰的另一路由模組的位置。As shown in FIG. 3, in the first routing module 320, two substrates 301 are rotated. The two transport tracks (on which the substrate is located) are rotated to align in the first direction. Therefore, the two substrates on the transport track are set at the positions to be transported to the transport module and another adjacent routing module.

根據可與本文描述的其他實施例結合之一些實施例,傳輸軌道配置的傳輸軌道可從真空處理腔室延伸至真空路由腔室中,即可定向於第二方向,第二方向係不同於第一方向。因此,可將一或多個基板從真空處理腔室轉移至相鄰的真空路由腔室。此外,如第3圖中示例性地所示,可在處理模組和路由模組之間提供閘閥305,此閘閥305可打開以傳輸一或多個基板。因此,應當理解,可將基板從第一處理模組傳送至第一路由模組,從第一路由模組傳送至另一路由模組,並且從另一路由模組傳送至另一處理模組。因此,有幾個程序(例如在基板上進行有機材料的各種層的沉積)可無需將基板暴露於不期望的環境(例如大氣環境或非真空環境)之下進行。According to some embodiments that can be combined with other embodiments described herein, the transport track of the transport track configuration can extend from the vacuum processing chamber to the vacuum routing chamber, that is, it can be oriented in a second direction, which is different from the first direction. One direction. Therefore, one or more substrates can be transferred from the vacuum processing chamber to the adjacent vacuum routing chamber. In addition, as exemplarily shown in Figure 3, a gate valve 305 may be provided between the processing module and the routing module, and the gate valve 305 may be opened to transfer one or more substrates. Therefore, it should be understood that the substrate can be transferred from a first processing module to a first routing module, from a first routing module to another routing module, and from another routing module to another processing module . Therefore, there are several procedures (such as the deposition of various layers of organic materials on the substrate) that can be performed without exposing the substrate to an undesirable environment (such as an atmospheric environment or a non-vacuum environment).

第3圖進一步示出處理模組310中的遮罩303和基板301。沉積源309可分別地設置於遮罩和/或基板之間。FIG. 3 further shows the mask 303 and the substrate 301 in the processing module 310. The deposition source 309 may be separately disposed between the mask and/or the substrate.

第3圖所示之模組的每個真空腔室係包括紫外線源350。舉例而言,紫外線源可設置於對應的真空腔室內。即使處理系統300示出在每個腔室處具有紫外線源的真空腔室,處理系統也可包括至少一紫外線源350。特別地,處理系統300可包括具有第一紫外線源350之第一真空腔室和具有第二紫外線源350之第二真空腔室。Each vacuum chamber of the module shown in FIG. 3 includes an ultraviolet source 350. For example, the ultraviolet source can be arranged in the corresponding vacuum chamber. Even though the processing system 300 shows a vacuum chamber with an ultraviolet source at each chamber, the processing system may include at least one ultraviolet source 350. In particular, the processing system 300 may include a first vacuum chamber with a first ultraviolet source 350 and a second vacuum chamber with a second ultraviolet source 350.

紫外線源350(例如處理模組310的紫外線源350)係連接至真空腔室。根據本揭露的實施例,連接至紫外線源的控制器係配置成執行紫外線/臭氧清潔。特別地,控制器可配置成實施於清潔例如本發明之有機發光二極體裝置的製造中使用的真空系統或真空腔室的方法。第4圖係更詳細地描述了具有紫外線源的示例性真空腔室。The ultraviolet source 350 (for example, the ultraviolet source 350 of the processing module 310) is connected to the vacuum chamber. According to an embodiment of the present disclosure, the controller connected to the ultraviolet source is configured to perform ultraviolet/ozone cleaning. In particular, the controller may be configured to implement a method of cleaning a vacuum system or a vacuum chamber used in the manufacture of, for example, the organic light emitting diode device of the present invention. Figure 4 describes in more detail an exemplary vacuum chamber with an ultraviolet source.

一或多個真空幫浦(例如渦輪幫浦和/或低溫幫浦)可連接至真空腔室,例如藉由一或多個管(例如波紋管)在真空腔室內產生技術性真空。控制器還可配置成例如在電漿清潔程序之前控制一或多個真空幫浦以降低真空腔室中的壓力。One or more vacuum pumps (such as turbo pumps and/or cryogenic pumps) may be connected to the vacuum chamber, for example, by one or more tubes (such as bellows) to generate a technical vacuum in the vacuum chamber. The controller may also be configured to control one or more vacuum pumps to reduce the pressure in the vacuum chamber, for example, before the plasma cleaning procedure.

在整個本揭露中使用的詞語“真空”可理解成具有小於例如10 mbar的真空壓力之技術性真空。真空腔室中的壓力可係為5 x 10-4 mbar至2 x 10-2 mbar。The term "vacuum" used throughout this disclosure can be understood as a technical vacuum having a vacuum pressure of less than, for example, 10 mbar. The pressure in the vacuum chamber can range from 5 x 10 -4 mbar to 2 x 10 -2 mbar.

如第3圖所示,真空處理系統300可具有複數個不同的模組。每個模組可具有至少一真空腔室。真空腔室的尺寸和幾何形狀可係為不同。如上所述,根據可與本文所述的其他實施例結合之本揭露的一些實施例,可藉由使紫外線光的平均自由程長度適應於真空腔室的尺寸和幾何形狀而提高活性物質和紫外線光之清潔的清潔效率。可在臭氧清潔、活性物質清潔和紫外線清潔之間取得良好的平衡。As shown in Figure 3, the vacuum processing system 300 may have a plurality of different modules. Each module can have at least one vacuum chamber. The size and geometry of the vacuum chamber can be different. As described above, according to some embodiments of the present disclosure that can be combined with other embodiments described herein, the active material and ultraviolet rays can be improved by adapting the mean free path length of ultraviolet light to the size and geometry of the vacuum chamber. The cleaning efficiency of light cleaning. A good balance can be achieved between ozone cleaning, active material cleaning and ultraviolet cleaning.

下文第4圖示例性描述的實施例係允許具有高效率的清潔程序還經歷短暫的中斷或閒置時間。因此,可在生產過程中控制再污染和總污染水平。恆定的高質量有機發光二極體裝置係可確保。 因此,由於短暫中斷期間的閒置時間可用於清潔,本文所述之實施例還允許有效地清潔污染物。The embodiment exemplarily described in Figure 4 below allows a highly efficient cleaning program to experience a short interruption or idle time. Therefore, the re-pollution and total pollution levels can be controlled during the production process. Constant high-quality organic light-emitting diode device system can be ensured. Therefore, since the idle time during the short interruption is available for cleaning, the embodiments described herein also allow for effective cleaning of contaminants.

紫外線源可包括一或多個紫外線燈,例如四個或更多個紫外線燈。舉例而言,紫外線燈可具有石英玻璃外殼。石英玻璃可減少紫外線輻射(即短波長輻射)的吸收。此外,根據附加或替代之修改,一或多個紫外線燈可係為水銀燈。可在真空腔室410中的處理氣體(例如氧氣)中原位產生臭氧。藉由操作真空幫浦420來降低壓力,係增加了紫外線的平均自由程長度。因此,可於待清潔的表面附近提供活性物質之生成。進一步的紫外線可能會抵達待清潔的表面,以輔助清潔程序。因此,可提供臭氧清潔和活性物質清潔之混合物。相較於用於實現更高臭氧密度之臭氧清洗,組合清洗程序之協同作用係提高了清洗效率。The ultraviolet source may include one or more ultraviolet lamps, for example four or more ultraviolet lamps. For example, the ultraviolet lamp may have a quartz glass housing. Quartz glass can reduce the absorption of ultraviolet radiation (ie, short-wavelength radiation). In addition, according to additional or alternative modifications, one or more of the ultraviolet lamps may be mercury lamps. Ozone may be generated in situ in the processing gas (for example, oxygen) in the vacuum chamber 410. By operating the vacuum pump 420 to reduce the pressure, the mean free path length of the ultraviolet rays is increased. Therefore, the production of active materials can be provided near the surface to be cleaned. Further ultraviolet rays may reach the surface to be cleaned to assist the cleaning process. Therefore, a mixture of ozone cleaning and active material cleaning can be provided. Compared to ozone cleaning, which is used to achieve higher ozone density, the synergistic effect of the combined cleaning process improves the cleaning efficiency.

鑑於上述,根據一實施例,提供一種用於真空處理基板的設備,特別是一種用於製造有機發光二極體裝置的設備。此設備包括一真空腔室;至少一紫外線源,位於真空腔室內;一真空幫浦,用於將真空腔室抽真空;以及一控制器,用於將壓力調節成一真空狀態,從而從真空腔室中的處理氣體提供臭氧和複數個活性自由基之一混合物。In view of the foregoing, according to an embodiment, an apparatus for vacuum processing a substrate is provided, particularly an apparatus for manufacturing an organic light emitting diode device. This equipment includes a vacuum chamber; at least one ultraviolet source located in the vacuum chamber; a vacuum pump for evacuating the vacuum chamber; and a controller for adjusting the pressure to a vacuum state, thereby removing The processing gas in the chamber provides a mixture of ozone and a plurality of active free radicals.

第4圖係繪示出一控制器490。控制器490係連接至真空幫浦420和紫外線源350。控制器490可包括中央處理單元(CPU)、記憶體以及例如支持電路。為了便於控制用於處理基板的設備,CPU可為可在工業環境中用於控制各種腔室和子處理器之任何形式的通用電腦處理器之一者。記憶體係耦合至CPU。記憶體或電腦可讀介質可為一或多個容易獲得的儲存設備,例如隨機存取記憶體(random access memory)、唯讀記憶體(read only memory)、軟體(floppy disk)、硬體(hard disk)或本地或遠程的任何其他形式的數位儲存。支持電路可耦合至CPU,以便以常規方式支持處理器。這些電路包括快取記憶體(cache)、電源、時鐘電路(clock circuits)、輸入/輸出電路和相關的子系統等。檢查處理指令和/或用於在基板上提供的電子設備中產生凹口的指令,係通常儲存於作為軟體例程(software routine)(通常稱為程式庫(recipe))的記憶體中。此軟體例程也可由第二CPU(未示出)儲存和/或執行,此第二CPU係遠離由CPU控制的硬體。當由CPU執行時,軟體例程將通用電腦轉換成專用電腦(控制器),此專用電腦係控制設備的操作,例如特別控制真空幫浦420和紫外線源350。儘管本揭露被討論係為被實現係為軟體例程,但是其中揭露的一些方法步驟可在硬體和由軟體控制器中執行。如此,實施例可用在電腦系統上執行的軟體,以及作係為專用集成電路或其他類型的硬件實現,或軟體和硬體的組合的硬體來實現。控制器可執行或執行用於清潔真空腔室和/或處理基板的方法,例如用於根據本揭露的實施例的顯示器製造。Figure 4 shows a controller 490. The controller 490 is connected to the vacuum pump 420 and the ultraviolet source 350. The controller 490 may include a central processing unit (CPU), a memory, and, for example, a supporting circuit. In order to facilitate the control of the equipment for processing the substrate, the CPU may be one of any form of general-purpose computer processors that can be used to control various chambers and sub-processors in an industrial environment. The memory system is coupled to the CPU. The memory or computer-readable medium may be one or more easily available storage devices, such as random access memory, read only memory, software (floppy disk), and hardware ( hard disk) or any other form of digital storage locally or remotely. The support circuit may be coupled to the CPU to support the processor in a conventional manner. These circuits include caches, power supplies, clock circuits, input/output circuits and related subsystems. Inspection processing instructions and/or instructions for generating notches in the electronic equipment provided on the substrate are usually stored in a memory as a software routine (commonly referred to as a recipe). This software routine can also be stored and/or executed by a second CPU (not shown) which is remote from the hardware controlled by the CPU. When executed by the CPU, the software routine converts a general-purpose computer into a dedicated computer (controller), which controls the operation of the device, such as the vacuum pump 420 and the ultraviolet source 350. Although this disclosure is discussed as being implemented as software routines, some of the method steps disclosed therein can be executed in hardware and by a software controller. In this way, the embodiments can be implemented by software executed on a computer system, and hardware implemented as an application specific integrated circuit or other types of hardware, or a combination of software and hardware. The controller may execute or execute a method for cleaning the vacuum chamber and/or processing the substrate, for example, for display manufacturing according to the embodiments of the present disclosure.

根據本文所述之實施例,可使用電腦程式、軟體、電腦軟體產品以及相關的控制器來執行用於基板的真空處理的方法,所述電腦程式、軟體、電腦軟體產品和相關的控制器可具有CPU、記憶體、使用者界面以及輸入和輸出。輸出設備係與設備的相應組件通訊。According to the embodiments described herein, computer programs, software, computer software products, and related controllers can be used to perform the method for vacuum processing of substrates. The computer programs, software, computer software products, and related controllers can be With CPU, memory, user interface and input and output. The output device communicates with the corresponding components of the device.

儘管前述內容針對本揭露的實施例,但是在不脫離本揭露的基本範圍之情況下,可設計本揭露的其他和進一步的實施例,且本揭露的範圍係由所附申請專利範圍所確定。Although the foregoing content is directed to the embodiments of the disclosure, other and further embodiments of the disclosure can be designed without departing from the basic scope of the disclosure, and the scope of the disclosure is determined by the scope of the attached patent application.

100:方法 110,120:方塊 200:方法 210:方塊 300:處理系統 301:基板 303:遮罩 305:閘閥 309:沉積源 310:處理模組 320:路由模組 330:運輸模組 340:維護模組 350:紫外線源 352:傳輸軌道 400:用於清潔真空腔室的設備 410:真空腔室 420:真空幫浦 490:控制器100: method 110, 120: block 200: method 210: Cube 300: processing system 301: Substrate 303: Mask 305: Gate Valve 309: Sediment Source 310: Processing module 320: routing module 330: Transport module 340: Maintenance Module 350: UV source 352: Transmission Track 400: Equipment for cleaning the vacuum chamber 410: vacuum chamber 420: vacuum pump 490: Controller

為了可詳細地理解本揭露的上述特徵的方式,可藉由參考實施例來對本揭露進行更具體的描述,簡短地總結上述內容。所附圖式係與本揭露的實施例有關,並且敘述如下: 第1圖係繪示根據本文所述實施例之用於清潔在有機發光二極體(OLED)裝置的製造中使用的真空系統的方法之流程圖; 第2圖係繪示根據本文所述實施例之用於真空處理基板以製造有機發光二極體裝置的方法之流程圖; 第3圖係繪示根據本文所述實施例之用於真空處理基板以製造有機發光二極體裝置的系統之示意圖;以及 第4圖係繪示根據本文所述實施例之用於清潔真空腔室的設備之示意圖。In order to understand the above-mentioned features of the present disclosure in detail, the present disclosure may be described in more detail by referring to embodiments, and the above-mentioned content can be briefly summarized. The attached drawings are related to the embodiments of the disclosure, and are described as follows: FIG. 1 is a flowchart of a method for cleaning a vacuum system used in the manufacture of organic light emitting diode (OLED) devices according to embodiments described herein; FIG. 2 is a flowchart of a method for vacuum processing a substrate to manufacture an organic light emitting diode device according to the embodiment described herein; FIG. 3 is a schematic diagram showing a system for vacuum processing a substrate to manufacture an organic light emitting diode device according to the embodiment described herein; and FIG. 4 is a schematic diagram of the equipment for cleaning the vacuum chamber according to the embodiment described herein.

350:紫外線源 350: UV source

400:設備 400: Equipment

410:真空腔室 410: vacuum chamber

420:真空幫浦 420: vacuum pump

490:控制器 490: Controller

Claims (20)

一種用於清潔一真空腔室的方法,包括: 在該真空腔室內點燃(igniting)一紫外線源;以及 將該真空腔室中的一壓力調節至一真空狀態,從而從該真空腔室中的一處理氣體中提供臭氧和複數個活性自由基(active radicals)之一混合物。A method for cleaning a vacuum chamber includes: Igniting an ultraviolet source in the vacuum chamber; and A pressure in the vacuum chamber is adjusted to a vacuum state, thereby providing a mixture of ozone and a plurality of active radicals from a processing gas in the vacuum chamber. 如請求項1所述之方法,其中該些活性自由基係由臭氧所產生。The method according to claim 1, wherein the active free radicals are generated by ozone. 如請求項1所述之方法,其中該紫外線源係以170nm至200nm之一波長來發射輻射。The method according to claim 1, wherein the ultraviolet source emits radiation at a wavelength of 170 nm to 200 nm. 如請求項1所述之方法,其中該紫外線源係以230nm至270nm之一波長來發射輻射。The method according to claim 1, wherein the ultraviolet source emits radiation at a wavelength of 230 nm to 270 nm. 如請求項1所述之方法,其中該紫外線源包括一水銀燈。The method according to claim 1, wherein the ultraviolet source includes a mercury lamp. 如請求項1所述之方法,其中該壓力係調節成5x10-4 mbar至2x10-2 mbar之一範圍內。The method according to claim 1, wherein the pressure is adjusted to be within a range of 5x10 -4 mbar to 2x10 -2 mbar. 如請求項1所述之方法,其中一處理氣體包括氧氣。The method according to claim 1, wherein one of the processing gas includes oxygen. 如請求項1所述之方法,還包括: 確定該真空腔室之複數個壁的一平均距離,其中該壓力係根據該平均距離來調節。The method described in claim 1 further includes: An average distance between the walls of the vacuum chamber is determined, and the pressure is adjusted according to the average distance. 如請求項1所述之方法,其中該方法係用於清潔一用於製造有機發光二極體(OLED)裝置之真空腔室。The method according to claim 1, wherein the method is used for cleaning a vacuum chamber for manufacturing an organic light emitting diode (OLED) device. 如請求項2至9中任一項所述之方法,其中該些活性自由基係由臭氧所產生。The method according to any one of claims 2 to 9, wherein the active free radicals are generated by ozone. 如請求項2和4至9中任一項所述之方法,其中該紫外線源係以170nm至200nm之一波長來發射輻射。The method according to any one of claims 2 and 4 to 9, wherein the ultraviolet source emits radiation at a wavelength of 170 nm to 200 nm. 3和5至9中任一項所述之方法,其中該紫外線源係以230nm至270nm之一波長來發射輻射。The method of any one of 3 and 5 to 9, wherein the ultraviolet source emits radiation at a wavelength of 230 nm to 270 nm. 如請求項2至4和6至9中任一項所述之方法,其中該紫外線源包括一水銀燈。The method according to any one of claims 2 to 4 and 6 to 9, wherein the ultraviolet source includes a mercury lamp. 如請求項2至5和7至9中任一項所述之方法,其中該壓力係調節成5x10-4 mbar至2x10-2 mbar之一範圍內。The method according to any one of claims 2 to 5 and 7 to 9, wherein the pressure is adjusted to be within a range of 5x10 -4 mbar to 2x10 -2 mbar. 如請求項2至6和8至9中任一項所述之方法,其中一處理氣體包括氧氣。The method according to any one of claims 2 to 6 and 8 to 9, wherein one processing gas includes oxygen. 如請求項2至7和9中任一項所述之方法,還包括: 確定該真空腔室之複數個壁的一平均距離,其中該壓力係根據該平均距離來調節。The method according to any one of claims 2 to 7 and 9, further comprising: An average distance between the walls of the vacuum chamber is determined, and the pressure is adjusted according to the average distance. 一種用於真空處理一基板以製造有機發光二極體裝置的方法,包括: 如請求項1至9中任一項所述之清潔方法;以及 在該基板上沉積一或多層有機材料。A method for vacuum processing a substrate to manufacture an organic light emitting diode device includes: The cleaning method according to any one of claims 1 to 9; and One or more layers of organic materials are deposited on the substrate. 一種用於真空處理一基板的設備,包括: 一真空腔室; 一紫外線源,位於該真空腔室內; 一真空幫浦,用於將該真空腔室抽真空;以及 一控制器,用於將一壓力調節成一真空狀態,從而從該真空腔室中的一處理氣體中提供臭氧和複數個活性自由基之一混合物。A device for vacuum processing a substrate, including: A vacuum chamber; An ultraviolet source located in the vacuum chamber; A vacuum pump for evacuating the vacuum chamber; and A controller is used to adjust a pressure to a vacuum state so as to provide a mixture of ozone and a plurality of active radicals from a processing gas in the vacuum chamber. 如請求項18所述之設備,其中該控制器還包括: 一處理器以及一儲存指令之記憶體,該處理器執行所述指令時該設備係執行如請求項1至8中任一項所述之方法。The device according to claim 18, wherein the controller further includes: A processor and a memory storing instructions. When the processor executes the instructions, the device executes the method described in any one of claim items 1 to 8. 如請求項18所述之設備,其中該設備係用於製造有機發光二極體裝置。The device according to claim 18, wherein the device is used to manufacture organic light emitting diode devices.
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