TW202042324A - Single wafer wet processing apparatus - Google Patents

Single wafer wet processing apparatus Download PDF

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TW202042324A
TW202042324A TW108115588A TW108115588A TW202042324A TW 202042324 A TW202042324 A TW 202042324A TW 108115588 A TW108115588 A TW 108115588A TW 108115588 A TW108115588 A TW 108115588A TW 202042324 A TW202042324 A TW 202042324A
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liquid
gas
recovery
wet processing
wind box
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TWI718529B (en
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陳賢鴻
吳宗恩
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弘塑科技股份有限公司
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Abstract

The present disclosure provides a single wafer wet processing apparatus including: a rotating stage for placing a wafer thereon, a liquid supply device for applying a plurality of kinds of processing liquid to the wafer, a liquid recovery device comprising a plurality of recycling rings, wherein each of the recovery rings is configured to collect a corresponding one kind of the processing liquid and a gas-liquid mixture accompanying the collected processing liquid, and a plurality of gas recovery devices respectively connected to the plurality of recovery rings of the liquid recovery device for discharging the collected gas-liquid mixture.

Description

單晶圓濕處理設備Single wafer wet processing equipment

本揭示是關於一種濕處理設備,特別是關於一種單晶圓濕處理設備。This disclosure relates to a wet processing equipment, in particular to a single wafer wet processing equipment.

在半導體晶圓的製程中,需要對半導體晶圓的元件設置面進行多道處理步驟,包含蝕刻、清洗等濕式處理程序。隨著半導體晶圓的製程複雜度增加,現已發展出一種單晶圓濕處理機台,其中採用一個旋轉台對應多個液體回收模組的設計,使得單晶圓濕處理機台可對旋轉台上的晶圓施加多種不同的化學液體,並且通過對應的回收模組收集該化學液體。藉由施加不同的化學液體可對半導體晶圓上的多種金屬層或其他材料薄膜層進行清洗蝕刻。也就是說,在單晶圓濕處理機台中會使用多種不同的化學液體,這使得用於收集化學液體及其夾帶的氣液混合物之收集裝置的功能要求變得格外嚴格。In the manufacturing process of semiconductor wafers, it is necessary to perform multiple processing steps on the component mounting surface of the semiconductor wafer, including wet processing procedures such as etching and cleaning. With the increase in the complexity of the semiconductor wafer process, a single-wafer wet processing machine has been developed, which uses a rotating table corresponding to the design of multiple liquid recovery modules, so that the single-wafer wet processing machine can rotate A variety of different chemical liquids are applied to the wafers on the stage, and the chemical liquids are collected through the corresponding recovery module. Various metal layers or thin film layers of other materials on the semiconductor wafer can be cleaned and etched by applying different chemical liquids. In other words, a variety of different chemical liquids are used in a single-wafer wet processing machine, which makes the functional requirements of the collecting device for collecting the chemical liquid and the gas-liquid mixture entrained in it become extremely strict.

然而,現有的單晶圓濕處理機台是採用多個液體回收模組共同連接至一個氣體回收裝置的設計。也就是說,雖然現有的單晶圓濕處理機台可藉由多個液體回收模組來對應收集不同的化學液體,卻無法將不同的化學液體夾帶的不同的氣液混合物分別獨立收集。上述單一個氣體回收裝置的設計會導致不同的氣液混合物在氣體回收裝置內混雜在一起。由於不同的氣液混合物含有(例如酸、鹼、溶劑等)不同性質的藥液,如果混雜在一起容易產生額外的化學反應,進而造成人員或機台的傷害,並且還會增加處理回收氣體的困難度。再者,倘若混雜在一起的混合物回流到多個液體回收模組內部時,則會造成液體回收模組收集到的化學液體與混合物之間發生交叉汙染之問題。However, the existing single-wafer wet processing machine adopts a design in which multiple liquid recovery modules are connected to one gas recovery device. In other words, although the existing single-wafer wet processing machine can collect different chemical liquids through multiple liquid recovery modules, it cannot collect different gas-liquid mixtures carried by different chemical liquids separately. The above-mentioned design of a single gas recovery device will cause different gas-liquid mixtures to be mixed together in the gas recovery device. Since different gas-liquid mixtures contain chemicals with different properties (such as acids, alkalis, solvents, etc.), if they are mixed together, they are likely to cause additional chemical reactions, which may cause injury to personnel or machines, and increase the processing and recovery of gas Difficulty. Furthermore, if the mixed mixture flows back into the multiple liquid recovery modules, it will cause the problem of cross-contamination between the chemical liquid collected by the liquid recovery module and the mixture.

有鑑於此,有必要提出一種單晶圓濕處理設備,以解決習知技術中存在的問題。In view of this, it is necessary to provide a single wafer wet processing equipment to solve the problems existing in the conventional technology.

為解決上述習知技術之問題,本揭示之目的在於提供一種單晶圓濕處理設備,其可針對不同製程液體所夾帶的氣液混合物進行獨立回收作業,以避免不同的氣液混合物混雜在一起。In order to solve the above-mentioned problems of the conventional technology, the purpose of the present disclosure is to provide a single-wafer wet processing equipment, which can independently recover gas-liquid mixtures carried by different process liquids to avoid mixing of different gas-liquid mixtures. .

為達成上述目的,本揭示提供一種單晶圓濕處理設備,包含:一旋轉台,用於放置一晶圓;一液體供應裝置,設置在該旋轉台上方,用於對該晶圓施加複數種製程液體;一液體回收裝置,環繞地設置在該旋轉台的周圍,並且可沿著一垂直方向相對該旋轉台移動,其中該液體回收裝置包含複數個沿著該垂直方向堆疊設置之回收環,且每一該回收環用於收集對應的其中一種製程液體及其夾帶的氣液混合物;以及複數個氣體回收裝置,分別與該液體回收裝置之該複數個回收環對應連接,其中每一該氣體回收裝置包含:一風箱,包含一第一連接口和一第二連接口,其中該第一連接口與對應的回收環連接,使得該回收環內的該氣液混合物經由該第一連接口進入該風箱的內部;以及一排氣管,與該風箱之該第二連接口連接,用於將收集的該氣液混合物排出。In order to achieve the above objective, the present disclosure provides a single wafer wet processing equipment, which includes: a rotating table for placing a wafer; a liquid supply device arranged above the rotating table for applying a plurality of types to the wafer Process liquid; a liquid recovery device that is circumferentially arranged around the rotary table and can move relative to the rotary table along a vertical direction, wherein the liquid recovery device includes a plurality of recovery rings stacked along the vertical direction, And each of the recovery rings is used to collect one of the corresponding process liquids and the gas-liquid mixture entrained therewith; and a plurality of gas recovery devices are respectively connected to the plurality of recovery rings of the liquid recovery device, wherein each of the gas The recovery device includes: a wind box including a first connection port and a second connection port, wherein the first connection port is connected to a corresponding recovery ring, so that the gas-liquid mixture in the recovery ring passes through the first connection port Into the inside of the wind box; and an exhaust pipe connected with the second connection port of the wind box for exhausting the collected gas-liquid mixture.

於本揭示其中之一較佳實施例中,每一該氣體回收裝置之該風箱還包含:一上表面、一下表面、一側表面、一空腔,該上表面與該下表面相對設置,且該側表面位在該上表面與該下表面之間,以及該空腔是由該上表面、該下表面、和該側表面互相連接而組成,其中該第一連接口設置在該側表面,以及該第二連接口設置在該上表面。In one of the preferred embodiments of the present disclosure, the wind box of each gas recovery device further includes: an upper surface, a lower surface, a side surface, and a cavity, the upper surface and the lower surface are disposed oppositely, and The side surface is located between the upper surface and the lower surface, and the cavity is formed by interconnecting the upper surface, the lower surface, and the side surface, wherein the first connection port is provided on the side surface, And the second connection port is arranged on the upper surface.

於本揭示其中之一較佳實施例中,每一該氣體回收裝置之該風箱還包含:一排液口,設置在該下表面,使得該氣液混合物通過該風箱而產生的凝結液體經由該排液口排出。In one of the preferred embodiments of the present disclosure, the wind box of each of the gas recovery devices further includes: a liquid discharge port arranged on the lower surface to allow the gas-liquid mixture to pass through the wind box to produce condensed liquid Discharge through the drain.

於本揭示其中之一較佳實施例中,該液體回收裝置之每一該回收環包含:一液體接收口,與該旋轉台對準;一分隔板,設置在該回收環的內部以分隔出一內環空間和一外環空間,其中該內環空間用於承接從該液體接收口進入的該製程液體及其夾帶的該氣液混合物,並且該分隔板阻擋該製程液體從該內環空間流至該外環空間,以及該分隔板上形成有複數個通孔,用於讓該內環空間內的該氣液混合物經由該等通孔進入該外環空間;以及一液體收集口,與該內環空間連通,用於讓該製程液體從該液體收集口排出;以及複數個氣體回收裝置,分別與該液體回收裝置之該複數個回收環對應連接,用於將收集的該氣液混合物排出。In one of the preferred embodiments of the present disclosure, each of the recovery rings of the liquid recovery device includes: a liquid receiving port aligned with the rotating table; and a partition plate arranged inside the recovery ring to separate An inner ring space and an outer ring space are provided, wherein the inner ring space is used to receive the process liquid and the gas-liquid mixture entrained from the liquid receiving port, and the partition plate blocks the process liquid from the inner The annular space flows to the outer annular space, and a plurality of through holes are formed on the partition plate for allowing the gas-liquid mixture in the inner annular space to enter the outer annular space through the through holes; and a liquid collection Port, connected with the inner ring space, for allowing the process liquid to be discharged from the liquid collection port; and a plurality of gas recovery devices, respectively connected with the plurality of recovery rings of the liquid recovery device, for collecting the The gas-liquid mixture is discharged.

於本揭示其中之一較佳實施例中,每一該回收環還包含:一環形上蓋;一環形底板,與該環形上蓋對應設置;一外環壁,與該環形上蓋之外周緣和該環形底板之外周緣連接;一氣體通道口,設置在該外環壁上,且與對應的其中之一該氣體回收裝置連接,其中該分隔板設置在該環形上蓋和該環形底板之間,以及該液體接收口位在該環形上蓋之內周緣和該環形底板之內周緣之間。In one of the preferred embodiments of the present disclosure, each of the recovery rings further includes: an annular upper cover; an annular bottom plate corresponding to the annular upper cover; an outer ring wall corresponding to the outer periphery of the annular upper cover and the annular The outer periphery of the bottom plate is connected; a gas passage opening is provided on the outer ring wall and connected to one of the corresponding gas recovery devices, wherein the partition plate is provided between the annular upper cover and the annular bottom plate, and The liquid receiving port is located between the inner periphery of the annular upper cover and the inner periphery of the annular bottom plate.

於本揭示其中之一較佳實施例中,每一該氣體回收裝置的該風箱還包含一觀視窗,且藉由該觀視窗可看到該風箱的內部;以及其中該單晶圓濕處理設備還包含複數個水管路,且每一該氣體回收裝置的該風箱與一個該水管路連接,以及藉由該水管路將潔淨水傳輸至該風箱以清洗該風箱的內部。In one of the preferred embodiments of the present disclosure, the bellows of each gas recovery device further includes a viewing window, and the inside of the bellows can be seen through the viewing window; and the single wafer is wet The processing equipment also includes a plurality of water pipes, and the wind box of each gas recovery device is connected with one water pipe, and the clean water is transmitted to the wind box through the water pipe to clean the inside of the wind box.

本揭示還提供一種單晶圓濕處理設備,包含:一旋轉台,用於放置一晶圓;一液體供應裝置,設置在該旋轉台上方,用於對該晶圓施加複數種製程液體;一液體回收裝置,環繞地設置在該旋轉台的周圍,並且可沿著一垂直方向相對該旋轉台移動,其中該液體回收裝置包含複數個沿著該垂直方向堆疊設置之回收環,其中每一該回收環包含:一液體接收口,與該旋轉台對準,用於接收對應的其中一種製程液體及其夾帶的氣液混合物;一分隔板,設置在該回收環的內部以分隔出一內環空間和一外環空間,其中該內環空間用於承接從該液體接收口進入的該製程液體及其夾帶的該氣液混合物,並且該分隔板阻擋該製程液體從該內環空間流至該外環空間,以及該分隔板上形成有複數個通孔,用於讓該內環空間內的該氣液混合物經由該等通孔進入該外環空間;以及一液體收集口,與該內環空間連通,用於讓該製程液體從該液體收集口排出;以及複數個氣體回收裝置,分別與該液體回收裝置之該複數個回收環對應連接,用於將收集的該氣液混合物排出。The present disclosure also provides a single wafer wet processing equipment, which includes: a rotating table for placing a wafer; a liquid supply device arranged above the rotating table for applying a plurality of process liquids to the wafer; The liquid recovery device is circumferentially arranged around the rotating platform and can move relative to the rotating platform along a vertical direction, wherein the liquid recovery device includes a plurality of recovery rings stacked along the vertical direction, and each of the The recovery ring includes: a liquid receiving port aligned with the rotating table for receiving one of the corresponding process liquids and the gas-liquid mixture entrained therewith; and a partition plate arranged inside the recovery ring to separate an inner An annular space and an outer annular space, wherein the inner annular space is used to receive the process liquid and the gas-liquid mixture entrained from the liquid receiving port, and the partition plate blocks the flow of the process liquid from the inner annular space A plurality of through holes are formed on the outer ring space and the partition plate for allowing the gas-liquid mixture in the inner ring space to enter the outer ring space through the through holes; and a liquid collection port, and The inner ring space is connected to allow the process liquid to be discharged from the liquid collection port; and a plurality of gas recovery devices are respectively connected to the plurality of recovery rings of the liquid recovery device for collecting the gas-liquid mixture discharge.

於本揭示其中之一較佳實施例中,每一該回收環還包含:一環形上蓋;一環形底板,與該環形上蓋對應設置;一外環壁,與該環形上蓋之外周緣和該環形底板之外周緣連接;一氣體通道口,設置在該外環壁上,且與對應的其中之一該氣體回收裝置連接,其中該分隔板設置在該環形上蓋和該環形底板之間,以及該液體接收口位在該環形上蓋之內周緣和該環形底板之內周緣之間。In one of the preferred embodiments of the present disclosure, each of the recovery rings further includes: an annular upper cover; an annular bottom plate corresponding to the annular upper cover; an outer ring wall corresponding to the outer periphery of the annular upper cover and the annular The outer periphery of the bottom plate is connected; a gas passage opening is provided on the outer ring wall and connected to one of the corresponding gas recovery devices, wherein the partition plate is provided between the annular upper cover and the annular bottom plate, and The liquid receiving port is located between the inner periphery of the annular upper cover and the inner periphery of the annular bottom plate.

於本揭示其中之一較佳實施例中,每一該氣體回收裝置包含:一風箱,包含一第一連接口和一第二連接口,其中該第一連接口與對應的回收環連接,使得該回收環內的該氣液混合物經由該第一連接口進入該風箱的內部;以及一排氣管,與該風箱之該第二連接口連接,用於將收集的該氣液混合物排出。In one of the preferred embodiments of the present disclosure, each gas recovery device includes: a wind box including a first connection port and a second connection port, wherein the first connection port is connected to the corresponding recovery ring, So that the gas-liquid mixture in the recovery ring enters the inside of the wind box through the first connection port; and an exhaust pipe connected to the second connection port of the wind box for collecting the gas-liquid mixture discharge.

於本揭示其中之一較佳實施例中,每一該氣體回收裝置之該風箱還包含:一上表面、一下表面、一側表面、一空腔,該上表面與該下表面相對設置,且該側表面位在該上表面與該下表面之間,以及該空腔是由該上表面、該下表面、和該側表面互相連接而組成,其中該第一連接口設置在該側表面,以及該第二連接口設置在該上表面。In one of the preferred embodiments of the present disclosure, the wind box of each gas recovery device further includes: an upper surface, a lower surface, a side surface, and a cavity, the upper surface and the lower surface are disposed oppositely, and The side surface is located between the upper surface and the lower surface, and the cavity is formed by interconnecting the upper surface, the lower surface, and the side surface, wherein the first connection port is provided on the side surface, And the second connection port is arranged on the upper surface.

於本揭示其中之一較佳實施例中,每一該氣體回收裝置之該風箱還包含:一排液口,設置在該下表面,使得該氣液混合物通過該風箱而產生的凝結液體經由該排液口排出。In one of the preferred embodiments of the present disclosure, the wind box of each of the gas recovery devices further includes: a liquid discharge port arranged on the lower surface to allow the gas-liquid mixture to pass through the wind box to produce condensed liquid Discharge through the drain.

於本揭示其中之一較佳實施例中,每一該氣體回收裝置的該風箱還包含一觀視窗,且藉由該觀視窗可看到該風箱的內部;以及其中該單晶圓濕處理設備還包含複數個水管路,且每一該氣體回收裝置的該風箱與一個該水管路連接,以及藉由該水管路將潔淨水傳輸至該風箱以清洗該風箱的內部。In one of the preferred embodiments of the present disclosure, the bellows of each gas recovery device further includes a viewing window, and the inside of the bellows can be seen through the viewing window; and the single wafer is wet The processing equipment also includes a plurality of water pipes, and the wind box of each gas recovery device is connected with one water pipe, and the clean water is transmitted to the wind box through the water pipe to clean the inside of the wind box.

相較於先前技術,本揭示藉由設置與回收環的數量相同的氣體回收裝置,並且每一回收環與一個氣體回收裝置對應連接。藉此設計,可藉由不同的氣體回收裝置對來自於不同回收環的製程氣體獨立進行抽氣作業,以避免不同製程液體夾帶的不同氣液混合物混雜在一起,進而產生額外的化學反應,造成單晶圓濕處理設備或人員的傷害,並且還降低了處理回收氣體的複雜度。再者,還可以避免混雜的廢氣回流至旋轉台或回收環所造成晶圓或者是其他處理腔體的污染。Compared with the prior art, the present disclosure uses the same number of gas recovery devices as the number of recovery rings, and each recovery ring is connected to a corresponding gas recovery device. With this design, the process gas from different recovery loops can be pumped independently by different gas recovery devices to prevent different gas-liquid mixtures entrained by different process liquids from being mixed together, resulting in additional chemical reactions. Single wafer wet processing equipment or personnel injury, and also reduces the complexity of processing recovered gas. Furthermore, it can also avoid the contamination of wafers or other processing chambers caused by mixed exhaust gas flowing back to the rotating table or recovery ring.

爲了讓本揭示之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本揭示較佳實施例,並配合所附圖式,作詳細說明如下。In order to make the above and other objectives, features, and advantages of the present disclosure more obvious and understandable, the following will describe the preferred embodiments of the present disclosure in conjunction with the accompanying drawings in detail.

請參照第1圖,其顯示本揭示之較佳實施例之單晶圓濕處理設備1之立體示意圖。單晶圓濕處理設備1包含旋轉台10、液體供應裝置(未顯示於圖中)、液體回收裝置20、複數個氣體回收裝置30、和升降裝置40。在本實施例中氣體回收裝置30的數量為四個,惟本揭示不侷限於此。旋轉台10用於放置單一片晶圓(未顯示於圖中)。在本實施例中,旋轉台10的頂部包含一真空吸盤,並且藉由真空吸盤的施加的吸力,使得晶圓可被固定在旋轉台10的頂部。旋轉台10配置有驅動機構,用於驅使旋轉台10繞軸旋轉。在其他實施例中亦可採用其他的方式來將晶圓固定在旋轉台上,例如採用夾持裝置等。再者,液體供應裝置設置在旋轉台10上方,用於對晶圓施加複數種製程液體。具體來說,液體供應裝置包含噴嘴和多條液體傳輸管線,其中噴嘴設置爲與旋轉台10的頂部對準,以及多條液體傳輸管線的一端與噴嘴連接,另一端分別連接至不同的製程液體的供應端。藉此設計,可根據製程需求來控制液體供應裝置施加對應的製程液體至旋轉台10上的晶圓,以對晶圓進行蝕刻或清洗等作業。Please refer to FIG. 1, which shows a three-dimensional schematic diagram of the single-wafer wet processing equipment 1 of the preferred embodiment of the present disclosure. The single wafer wet processing equipment 1 includes a rotating table 10, a liquid supply device (not shown in the figure), a liquid recovery device 20, a plurality of gas recovery devices 30, and a lifting device 40. In this embodiment, the number of gas recovery devices 30 is four, but the present disclosure is not limited to this. The rotating table 10 is used to place a single wafer (not shown in the figure). In this embodiment, the top of the rotating table 10 includes a vacuum chuck, and the wafer can be fixed on the top of the rotating table 10 by the suction force applied by the vacuum chuck. The rotating table 10 is equipped with a driving mechanism for driving the rotating table 10 to rotate around an axis. In other embodiments, other methods may be used to fix the wafer on the rotating table, such as a clamping device. Furthermore, the liquid supply device is arranged above the rotating table 10 and is used to apply a plurality of processing liquids to the wafer. Specifically, the liquid supply device includes a nozzle and a plurality of liquid transfer lines, wherein the nozzle is arranged to be aligned with the top of the rotating table 10, and one end of the plurality of liquid transfer lines is connected to the nozzle, and the other end is connected to different process liquids. On the supply side. With this design, the liquid supply device can be controlled to apply the corresponding process liquid to the wafer on the turntable 10 according to the process requirements, so as to perform operations such as etching or cleaning on the wafer.

如第1圖所示,液體回收裝置20環繞地設置在旋轉台10的周圍,用於收集從旋轉台10上晶圓表面因離心力甩出的製程液體,並且將該製程液體排出。複數個氣體回收裝置30與液體回收裝置20對應連接,用於將收集的氣液混合物排出。本實施例之液體回收裝置20與氣體回收裝置30之具體結構將於後詳述。升降裝置40與液體回收裝置20連接,用於控制液體回收裝置20沿著一垂直方向相對旋轉台10升降移動。並且,由於複數個氣體回收裝置30與液體回收裝置20連接,故當液體回收裝置20升降時,連帶地複數個氣體回收裝置30會一起上升或下降。As shown in FIG. 1, the liquid recovery device 20 is arranged around the rotating table 10 to collect the processing liquid thrown from the wafer surface on the rotating table 10 due to centrifugal force, and to discharge the processing liquid. A plurality of gas recovery devices 30 are correspondingly connected with the liquid recovery device 20 for discharging the collected gas-liquid mixture. The specific structures of the liquid recovery device 20 and the gas recovery device 30 of this embodiment will be described in detail later. The lifting device 40 is connected to the liquid recovery device 20 and is used to control the liquid recovery device 20 to move up and down relative to the rotating table 10 along a vertical direction. In addition, since the plurality of gas recovery devices 30 are connected to the liquid recovery device 20, when the liquid recovery device 20 is raised and lowered, the plurality of gas recovery devices 30 will rise or fall together.

請參照第1圖和第2圖,第2圖顯示第1圖之單晶圓濕處理設備1之局部剖面放大圖。液體回收裝置20包含複數個沿著垂直方向堆疊設置之回收環21~24。每一回收環21~24用於收集對應的其中一種製程液體及其夾帶的氣液混合物。藉由升降裝置40的控制,使該等回收環21~24一起同步移動,如此可使指定之回收環21~24移動至與旋轉台10對準,其中對準是指其中之一回收環21~24的液體接收口與旋轉台10上的晶圓相鄰,使得當液體供應裝置施加製程液體至旋轉台10上的晶圓,且旋轉台10旋轉時,旋轉台10上晶圓表面因離心力甩出的製程液體可被相鄰的其中之一回收環21~24收集。也就是說,本揭示的單晶圓濕處理設備1是一種具有移動式液體回收裝置20之清洗蝕刻設備,它可使在旋轉台10上的晶圓保持水平固定,不作上下移動。當進行單晶圓旋轉清洗或蝕刻製程時,根據執行的步驟控制指定的回收環移動至對準旋轉台10,接著由晶圓上方之液體供應裝置噴灑特定的製程液體至晶圓表面,並由旋轉台10帶動晶圓旋轉,以收集此特定的製程液體及其夾帶的氣液混合物。Please refer to FIG. 1 and FIG. 2. FIG. 2 shows an enlarged partial cross-sectional view of the single wafer wet processing equipment 1 of FIG. 1. The liquid recovery device 20 includes a plurality of recovery rings 21-24 stacked in a vertical direction. Each recovery ring 21-24 is used to collect one of the corresponding process liquids and the entrained gas-liquid mixture. By the control of the lifting device 40, the recovery rings 21-24 are moved together in synchronization, so that the designated recovery rings 21-24 can be moved to be aligned with the rotating table 10. The alignment refers to one of the recovery rings 21 The liquid receiving port of ~24 is adjacent to the wafer on the turntable 10, so that when the liquid supply device applies process liquid to the wafer on the turntable 10, and the turntable 10 rotates, the surface of the wafer on the turntable 10 is caused by centrifugal force. The thrown process liquid can be collected by one of the adjacent recovery rings 21-24. In other words, the single-wafer wet processing equipment 1 of the present disclosure is a cleaning and etching equipment with a mobile liquid recovery device 20, which can keep the wafers on the rotating table 10 fixed horizontally and not move up and down. When performing a single wafer spin cleaning or etching process, control the designated recovery ring to move to the alignment turntable 10 according to the executed steps, and then spray the specific process liquid onto the wafer surface from the liquid supply device above the wafer, and The rotating table 10 drives the wafer to rotate to collect the specific process liquid and its entrained gas-liquid mixture.

請參照第2圖和第3圖,其中第3圖顯示第1圖之單晶圓濕處理設備1之回收環21與氣體回收裝置30之局部示意圖。第3圖是以位在第一層的回收環21和與其連接的氣體回收裝置30作為說明。應當理解的是,其餘回收環22~24的結構與第一層的回收環21的結構大致相同。如第2圖所示,回收環21包含環形上蓋201、環形底板202、外環壁203、液體接收口204。又,如第3圖所示,回收環21還包含分隔板205、氣體通道口206、和液體收集口207。回收環21的環形底板202與環形上蓋201對應設置。本實施例中,該等回收環21~24是沿著垂直方向堆疊設置,並且位在上方的回收環的環形底板202是作為下方的回收環的環形上蓋201,進而使得每一回收環內部的空間得以最大化,節省液體回收裝置20的使用材料,以及有效地縮減液體回收裝置20的整體體積。回收環21的外環壁203與環形上蓋201之外周緣和環形底板202之外周緣連接。環形上蓋201、環形底板202、和外環壁203彼此連接並且定義出回收環21的內部空間。回收環21的液體接收口204位在環形上蓋201之內周緣和環形底板202之內周緣之間。當指定的回收環21移動至對準旋轉台10,指定的回收環21的液體接收口204會與旋轉台10對準,使得回收環21可藉由液體接收口204接收對應的製程液體及其夾帶的氣液混合物。Please refer to FIG. 2 and FIG. 3. FIG. 3 shows a partial schematic diagram of the recovery ring 21 and the gas recovery device 30 of the single wafer wet processing equipment 1 in FIG. Fig. 3 illustrates the recovery ring 21 located on the first layer and the gas recovery device 30 connected to it. It should be understood that the structure of the remaining recovery rings 22-24 is substantially the same as the structure of the recovery ring 21 of the first layer. As shown in FIG. 2, the recovery ring 21 includes an annular upper cover 201, an annular bottom plate 202, an outer ring wall 203, and a liquid receiving port 204. Moreover, as shown in FIG. 3, the recovery ring 21 further includes a partition plate 205, a gas passage port 206, and a liquid collection port 207. The annular bottom plate 202 of the recovery ring 21 and the annular upper cover 201 are arranged correspondingly. In this embodiment, the recovery rings 21-24 are stacked in a vertical direction, and the annular bottom plate 202 of the upper recovery ring serves as the ring upper cover 201 of the lower recovery ring, so that the inner part of each recovery ring The space is maximized, the materials used in the liquid recovery device 20 are saved, and the overall volume of the liquid recovery device 20 is effectively reduced. The outer ring wall 203 of the recovery ring 21 is connected to the outer periphery of the annular upper cover 201 and the outer periphery of the annular bottom plate 202. The ring-shaped upper cover 201, the ring-shaped bottom plate 202, and the outer ring wall 203 are connected to each other and define the internal space of the recovery ring 21. The liquid receiving port 204 of the recovery ring 21 is located between the inner periphery of the annular upper cover 201 and the inner periphery of the annular bottom plate 202. When the designated recovery ring 21 moves to align with the rotating table 10, the liquid receiving port 204 of the designated recovery ring 21 will be aligned with the rotating table 10, so that the recovery ring 21 can receive the corresponding process liquid and its Entrained gas-liquid mixture.

如第3圖所示,回收環21的分隔板205設置在回收環21的內部以將回收環21的內部空間分隔出一內環空間208和一外環空間209。內環空間208用於承接從液體接收口204進入的製程液體及其夾帶的氣液混合物,並且藉由分隔板205的阻擋可防止製程液體從內環空間208流至外環空間209。分隔板205上形成有複數個通孔2051,使得內環空間208內的氣液混合物可經由該等通孔2051進入外環空間209。在本實施例中,分隔板205上形成有28個通孔2051,惟不侷限於此。較佳地,分隔板205的通孔2051的孔徑約為5至10 mm,以確保一方面能將製程液體夾帶的氣液混合物從內環空間208充分地抽至外環空間209,另一方面還能將製程液體阻隔在內環空間208中。As shown in FIG. 3, the partition plate 205 of the recovery ring 21 is disposed inside the recovery ring 21 to separate the internal space of the recovery ring 21 into an inner ring space 208 and an outer ring space 209. The inner ring space 208 is used to receive the process liquid entering from the liquid receiving port 204 and its entrained gas-liquid mixture, and the partition plate 205 can prevent the process liquid from flowing from the inner ring space 208 to the outer ring space 209. A plurality of through holes 2051 are formed on the partition plate 205 so that the gas-liquid mixture in the inner ring space 208 can enter the outer ring space 209 through the through holes 2051. In this embodiment, 28 through holes 2051 are formed on the partition plate 205, but it is not limited thereto. Preferably, the aperture of the through hole 2051 of the partition plate 205 is about 5 to 10 mm to ensure that the gas-liquid mixture entrained by the process liquid can be fully drawn from the inner ring space 208 to the outer ring space 209 on the one hand, and the other On the other hand, the process liquid can be blocked in the inner ring space 208.

如第3圖所示,回收環21的氣體通道口206設置在外環壁203上,且氣體通道口206與對應的氣體回收裝置30連接,如此回收環21收集到的氣液混合物進入外環空間209之後可通過氣體通道口206傳送至氣體回收裝置30。回收環21的液體收集口207與內環空間208連通,用於讓製程液體從液體收集口207排出。具體來說,液體收集口207位於回收環21的水平位置之最低點,使得回收環21所收集之製程液體因重力而流動到液體收集口207。並且,回收環21的液體收集口207與對應的回收管連接,進而將收集到的製程液體排放或回收。舉例來說,如第2圖所示,位在第二層的回收環22與單晶圓濕處理設備1內部的回收管50連接,並且回收環22收集的製程液體是經由路徑51排出。可選地,回收管50可與循環系統連接,以將處理後的製程液體再次回送到單晶圓濕處理設備1之液體供應裝置。較佳地,液體收集口207的孔徑約為10至15 mm,以確保能讓蝕刻後的雜質、收集的製程液體或其形成的結晶通過。As shown in Figure 3, the gas channel opening 206 of the recovery ring 21 is provided on the outer ring wall 203, and the gas channel opening 206 is connected to the corresponding gas recovery device 30, so that the gas-liquid mixture collected by the recovery ring 21 enters the outer ring The space 209 can then be conveyed to the gas recovery device 30 through the gas passage port 206. The liquid collection port 207 of the recovery ring 21 is in communication with the inner ring space 208 for allowing the process liquid to be discharged from the liquid collection port 207. Specifically, the liquid collection port 207 is located at the lowest point of the horizontal position of the recovery ring 21, so that the process liquid collected by the recovery ring 21 flows to the liquid collection port 207 due to gravity. In addition, the liquid collection port 207 of the recovery ring 21 is connected to a corresponding recovery pipe, so as to discharge or recover the collected process liquid. For example, as shown in FIG. 2, the recovery ring 22 on the second layer is connected to the recovery pipe 50 inside the single wafer wet processing equipment 1, and the process liquid collected by the recovery ring 22 is discharged through a path 51. Optionally, the recovery pipe 50 can be connected to a circulation system to return the processed process liquid to the liquid supply device of the single wafer wet processing equipment 1 again. Preferably, the aperture of the liquid collection port 207 is about 10 to 15 mm, so as to ensure that the etched impurities, the collected process liquid or the formed crystals can pass through.

請參照第4圖,其顯示第3圖之回收環21的零件爆炸圖。分隔板205的板面平行於回收環21的堆疊方向。分隔板205的一側安裝在環形底板202的下溝槽2021內,以及分隔板205的另一側安裝在環形上蓋201的上溝槽2011(參見第5圖)內。藉由上述分隔板205的安裝方式,可方便分隔板205的組裝以及替換。再者,在本實施例中,回收環21的分隔板205是採用四片式結構,藉此設計,當其中一片分隔板205的通孔2051阻塞時,可只針對該片分隔板205進行替換,而不需要將整組分隔板205全部換掉。在其他實施例中可以採用其他數量的分隔板,不侷限於此。應當注意的是,分隔板205的多個通孔2051彼此是以相等或相近的間隔排列成一環狀,以形成一環狀抽氣構造,進而確保回收環21的抽取氣流是均勻的,可充分抽取清洗或蝕刻的製程液體所夾帶的氣液混合物。並且,藉此環狀抽氣構造的設計,可避免在對晶圓進行蝕刻作業時,晶圓上的製程液體被朝向單一方向的大氣流影響而偏向某一邊,造成晶圓的蝕刻不均勻。Please refer to Figure 4, which shows an exploded view of the parts of the recovery ring 21 in Figure 3. The plate surface of the partition plate 205 is parallel to the stacking direction of the recovery ring 21. One side of the partition plate 205 is installed in the lower groove 2021 of the annular bottom plate 202, and the other side of the partition plate 205 is installed in the upper groove 2011 of the annular upper cover 201 (see FIG. 5). With the above-mentioned installation method of the partition plate 205, the assembly and replacement of the partition plate 205 can be facilitated. Furthermore, in this embodiment, the partition plate 205 of the recovery ring 21 adopts a four-piece structure, and with this design, when the through hole 2051 of one of the partition plates 205 is blocked, it can only be used for the partition plate. 205 is replaced, without the need to replace the entire set of partitions 205. In other embodiments, other numbers of partition plates may be used, and it is not limited thereto. It should be noted that the multiple through holes 2051 of the partition plate 205 are arranged in a ring at equal or similar intervals to form a ring-shaped air extraction structure, thereby ensuring that the extraction air flow of the recovery ring 21 is uniform. Fully extract the gas-liquid mixture entrained by the cleaning or etching process liquid. Moreover, the design of the ring-shaped air extraction structure can prevent the process liquid on the wafer from being biased to one side due to the large airflow in a single direction when the wafer is etched, causing uneven etching of the wafer.

如第1圖和第2圖所示,氣體回收裝置30的數量與回收環21~24的數量相同,並且每一回收環21~24與一個氣體回收裝置30對應連接。藉此設計,可藉由不同的氣體回收裝置30針對來自於不同回收環21~24的製程氣體獨立進行抽氣作業,以避免不同製程液體夾帶的不同氣液混合物混雜在一起,進而產生額外的化學反應,造成單晶圓濕處理設備1或人員的傷害,並且還降低了處理回收氣體的複雜度。再者,還可以避免混雜的廢氣回流至旋轉台10或回收環21~24,進而造成晶圓或者是其他處理腔體的污染。As shown in FIGS. 1 and 2, the number of gas recovery devices 30 is the same as the number of recovery rings 21-24, and each recovery ring 21-24 is connected to one gas recovery device 30 correspondingly. With this design, different gas recovery devices 30 can be used to pump the process gases from different recovery rings 21-24 independently, so as to prevent different gas-liquid mixtures entrained by different process liquids from being mixed together, thereby generating additional The chemical reaction causes damage to the single wafer wet processing equipment 1 or personnel, and also reduces the complexity of processing the recovered gas. Furthermore, it can also prevent the mixed exhaust gas from flowing back to the turntable 10 or the recovery ring 21-24, thereby causing contamination of the wafer or other processing chambers.

請參照第5圖,其顯示第1圖之單晶圓濕處理設備1之另一局部剖面放大圖。第5圖是以位在第一層的回收環21和與其連接的氣體回收裝置30作為說明。應當理解的是,其餘回收環22~24和其餘氣體回收裝置30的結構與第一層的回收環21和氣體回收裝置30的結構大致相同。氣體回收裝置30對回收環21施加負壓,使得回收環21和氣體回收裝置30的內部會產生如同路徑61的氣流。具體來說,回收環21收集到的氣液混合物會從內環空間208經由分隔板205的通孔2051抽至外環空間209。並且,外環空間209中的氣液混合物會經由外環壁203上的氣體通道口206傳送至氣體回收裝置30內部。Please refer to FIG. 5, which shows another partial cross-sectional enlarged view of the single wafer wet processing equipment 1 of FIG. 1. Figure 5 illustrates the recovery ring 21 located on the first layer and the gas recovery device 30 connected to it. It should be understood that the structures of the remaining recovery rings 22-24 and the remaining gas recovery device 30 are substantially the same as the structures of the recovery ring 21 and the gas recovery device 30 of the first layer. The gas recovery device 30 applies negative pressure to the recovery ring 21, so that the inside of the recovery ring 21 and the gas recovery device 30 will generate a gas flow like the path 61. Specifically, the gas-liquid mixture collected by the recovery ring 21 is drawn from the inner ring space 208 to the outer ring space 209 through the through hole 2051 of the partition plate 205. In addition, the gas-liquid mixture in the outer ring space 209 will be transferred to the inside of the gas recovery device 30 through the gas passage opening 206 on the outer ring wall 203.

如第5圖所示,氣體回收裝置30包含風箱31和排氣管32。風箱31包含上表面301、下表面302、側表面303、空腔304、第一連接口305、第二連接口306、和排液口307。風箱31的上表面301與下表面302相對設置,並且側表面303位在上表面301與下表面302之間。上表面301、下表面302、和側表面303互相連接而組成空腔304。風箱31的側表面303形成有第一連接口305,上表面301形成有第二連接口306,以及下表面302形成有排液口307。風箱31的第一連接口305與回收環21的氣體通道口206連接,使得回收環21內的氣液混合物經由第一連接口305進入風箱31的空腔304內部。排氣管32與風箱31的之第二連接口306連接,用於將收集的氣液混合物排出。再者,當氣液混合物通過風箱31時,部分的氣體會凝結成液體。為了避免液體堆積在風箱31的空腔304中,藉由位在風箱31的下表面302的排液口307的設置可將凝結液體沿著路徑62經由排液口307排出,以保持風箱31內部的乾淨。As shown in FIG. 5, the gas recovery device 30 includes a wind box 31 and an exhaust pipe 32. The bellows 31 includes an upper surface 301, a lower surface 302, a side surface 303, a cavity 304, a first connection port 305, a second connection port 306, and a liquid discharge port 307. The upper surface 301 and the lower surface 302 of the bellows 31 are disposed opposite to each other, and the side surface 303 is located between the upper surface 301 and the lower surface 302. The upper surface 301, the lower surface 302, and the side surface 303 are connected to each other to form a cavity 304. The side surface 303 of the wind box 31 is formed with a first connection port 305, the upper surface 301 is formed with a second connection port 306, and the lower surface 302 is formed with a liquid discharge port 307. The first connection port 305 of the wind box 31 is connected to the gas passage port 206 of the recovery ring 21 so that the gas-liquid mixture in the recovery ring 21 enters the cavity 304 of the wind box 31 through the first connection port 305. The exhaust pipe 32 is connected to the second connecting port 306 of the wind box 31 for exhausting the collected gas-liquid mixture. Furthermore, when the gas-liquid mixture passes through the wind box 31, part of the gas will condense into liquid. In order to prevent liquid from accumulating in the cavity 304 of the wind box 31, the liquid discharge port 307 located on the lower surface 302 of the wind box 31 can discharge the condensed liquid along the path 62 through the liquid discharge port 307 to maintain the wind The inside of box 31 is clean.

此外,如第3圖所示,單晶圓濕處理設備1還包含多個水管路70,且每一氣體回收裝置30的風箱31與一個水管路70連接。又,每一氣體回收裝置30的風箱31還包含觀視窗80。因此,當人員經由觀視窗80看到風箱31內部有結晶或異物堆積時,可藉由水管路70清洗該風箱的內部。具體來說,藉由水管路70將小量的潔淨水傳輸至風箱31內部,使得結晶或異物沿著路徑62(如第5圖所示)從風箱31的排液口307排出。In addition, as shown in FIG. 3, the single wafer wet processing equipment 1 further includes a plurality of water pipes 70, and the wind box 31 of each gas recovery device 30 is connected to a water pipe 70. Moreover, the wind box 31 of each gas recovery device 30 also includes a viewing window 80. Therefore, when a person sees crystals or foreign matter accumulation in the wind box 31 through the viewing window 80, the water pipe 70 can clean the inside of the wind box. Specifically, a small amount of clean water is transferred to the inside of the wind box 31 through the water pipe 70, so that crystals or foreign objects are discharged from the drain 307 of the wind box 31 along the path 62 (as shown in FIG. 5).

綜上所述,本揭示藉由設置與回收環的數量相同的氣體回收裝置,並且每一回收環與一個氣體回收裝置對應連接。藉此設計,可藉由不同的氣體回收裝置對來自於不同回收環的製程氣體獨立進行抽氣作業,以避免不同製程液體夾帶的不同氣液混合物混雜在一起,進而產生額外的化學反應,造成單晶圓濕處理設備或人員的傷害,並且還降低了處理回收氣體的複雜度。再者,還可以避免混雜的廢氣回流至旋轉台或回收環,進而造成晶圓或者是其他處理腔體的汙染。To sum up, the present disclosure uses the same number of gas recovery devices as the number of recovery rings, and each recovery ring is connected to one gas recovery device. With this design, the process gas from different recovery loops can be pumped independently by different gas recovery devices to prevent different gas-liquid mixtures entrained by different process liquids from being mixed together, resulting in additional chemical reactions. Single wafer wet processing equipment or personnel injury, and also reduces the complexity of processing recovered gas. Furthermore, it can also prevent mixed exhaust gas from flowing back to the turntable or recovery ring, which may cause contamination of wafers or other processing chambers.

以上僅是本揭示的較佳實施方式,應當指出,對於所屬領域技術人員,在不脫離本揭示原理的前提下,還可以做出若干改進和潤飾,這些改進和潤飾也應視爲本揭示的保護範圍。The above are only the preferred embodiments of the present disclosure. It should be pointed out that for those skilled in the art, without departing from the principles of the present disclosure, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the present disclosure. protected range.

1:單晶圓濕處理設備 10:旋轉台 20:液體回收裝置 21~24:回收環 201:環形上蓋 2011:上溝槽 202:環形底板 2021:下溝槽 203:外環壁 204:液體接收口 205:分隔板 2051:通孔 206:氣體通道口 207:液體收集口 208:內環空間 209:外環空間 30:氣體回收裝置 31:風箱 32:排氣管 301:上表面 302:下表面 303:側表面 304:空腔 305:第一連接口 306:第二連接口 307:排液口 40:升降裝置 50:回收管 51、61、62:路徑 70:水管路 80:觀視窗1: Single wafer wet processing equipment 10: Rotating table 20: Liquid recovery device 21~24: recycling ring 201: ring upper cover 2011: upper groove 202: Ring bottom plate 2021: Lower groove 203: Outer Ring Wall 204: Liquid receiving port 205: divider 2051: Through hole 206: Gas Channel Port 207: Liquid collection port 208: Inner Ring Space 209: Outer Ring Space 30: Gas recovery device 31: Bellows 32: Exhaust pipe 301: upper surface 302: lower surface 303: side surface 304: Cavity 305: first connection port 306: second connection port 307: Drain 40: Lifting device 50: recovery tube 51, 61, 62: path 70: Water pipe 80: viewing window

第1圖顯示本揭示之較佳實施例之單晶圓濕處理設備之立體示意圖; 第2圖顯示第1圖之單晶圓濕處理設備之局部剖面放大圖; 第3圖顯示第1圖之單晶圓濕處理設備之回收環與氣體回收裝置之局部示意圖; 第4圖顯示第3圖之回收環的零件爆炸圖;以及 第5圖顯示第1圖之單晶圓濕處理設備之另一局部剖面放大圖。Figure 1 shows a three-dimensional schematic diagram of a single wafer wet processing equipment according to a preferred embodiment of the present disclosure; Figure 2 shows an enlarged partial cross-sectional view of the single wafer wet processing equipment in Figure 1; Figure 3 shows a partial schematic diagram of the recovery ring and gas recovery device of the single wafer wet processing equipment in Figure 1; Figure 4 shows an exploded view of the parts of the recovery ring in Figure 3; and Fig. 5 shows another partial cross-sectional enlarged view of the single wafer wet processing equipment of Fig. 1.

1:單晶圓濕處理設備 1: Single wafer wet processing equipment

10:旋轉台 10: Rotating table

20:液體回收裝置 20: Liquid recovery device

30:氣體回收裝置 30: Gas recovery device

40:升降裝置 40: Lifting device

Claims (12)

一種單晶圓濕處理設備,包含: 一旋轉台,用於放置一晶圓; 一液體供應裝置,設置在該旋轉台上方,用於對該晶圓施加複數種製程液體; 一液體回收裝置,環繞地設置在該旋轉台的周圍,並且可沿著一垂直方向相對該旋轉台移動,其中該液體回收裝置包含複數個沿著該垂直方向堆疊設置之回收環,且每一該回收環用於收集對應的其中一種製程液體及其夾帶的氣液混合物;以及 複數個氣體回收裝置,分別與該液體回收裝置之該複數個回收環對應連接,其中每一該氣體回收裝置包含: 一風箱,包含一第一連接口和一第二連接口,其中該第一連接口與對應的回收環連接,使得該回收環內的該氣液混合物經由該第一連接口進入該風箱的內部;以及 一排氣管,與該風箱之該第二連接口連接,用於將收集的該氣液混合物排出。A single wafer wet processing equipment, including: A rotating table for placing a wafer; A liquid supply device, arranged above the rotating table, for applying a plurality of process liquids to the wafer; A liquid recovery device is circumferentially arranged around the rotating platform and can move relative to the rotating platform along a vertical direction, wherein the liquid recovery device includes a plurality of recovery rings stacked along the vertical direction, and each The recovery ring is used to collect one of the corresponding process liquids and their entrained gas-liquid mixture; and A plurality of gas recovery devices are respectively connected to the plurality of recovery rings of the liquid recovery device, and each of the gas recovery devices includes: A wind box includes a first connection port and a second connection port, wherein the first connection port is connected to a corresponding recovery ring, so that the gas-liquid mixture in the recovery ring enters the wind box through the first connection port Inside; and An exhaust pipe is connected with the second connection port of the wind box, and is used to discharge the collected gas-liquid mixture. 如請求項1之單晶圓濕處理設備,其中每一該氣體回收裝置之該風箱還包含:一上表面、一下表面、一側表面、一空腔,該上表面與該下表面相對設置,且該側表面位在該上表面與該下表面之間,以及該空腔是由該上表面、該下表面、和該側表面互相連接而組成,其中該第一連接口設置在該側表面,以及該第二連接口設置在該上表面。For example, the single-wafer wet processing equipment of claim 1, wherein the air box of each gas recovery device further includes: an upper surface, a lower surface, a side surface, and a cavity, and the upper surface and the lower surface are arranged oppositely, And the side surface is located between the upper surface and the lower surface, and the cavity is formed by connecting the upper surface, the lower surface, and the side surface to each other, wherein the first connection port is provided on the side surface , And the second connecting port is provided on the upper surface. 如請求項2之單晶圓濕處理設備,其中每一該氣體回收裝置之該風箱還包含:一排液口,設置在該下表面,使得該氣液混合物通過該風箱而產生的凝結液體經由該排液口排出。For example, the single-wafer wet processing equipment of claim 2, wherein the wind box of each gas recovery device further includes: a liquid discharge port is provided on the lower surface, so that the gas-liquid mixture passes through the wind box to produce condensation The liquid is discharged through the discharge port. 如請求項1之單晶圓濕處理設備,其中該液體回收裝置之每一該回收環包含: 一液體接收口,與該旋轉台對準; 一分隔板,設置在該回收環的內部以分隔出一內環空間和一外環空間,其中該內環空間用於承接從該液體接收口進入的該製程液體及其夾帶的該氣液混合物,並且該分隔板阻擋該製程液體從該內環空間流至該外環空間,以及該分隔板上形成有複數個通孔,用於讓該內環空間內的該氣液混合物經由該等通孔進入該外環空間;以及 一液體收集口,與該內環空間連通,用於讓該製程液體從該液體收集口排出;以及 複數個氣體回收裝置,分別與該液體回收裝置之該複數個回收環對應連接,用於將收集的該氣液混合物排出。For example, the single wafer wet processing equipment of claim 1, wherein each of the recovery loops of the liquid recovery device includes: A liquid receiving port aligned with the rotating table; A partition plate is arranged inside the recovery ring to separate an inner ring space and an outer ring space, wherein the inner ring space is used to receive the process liquid entering from the liquid receiving port and the entrained gas and liquid And the partition plate blocks the process liquid from flowing from the inner ring space to the outer ring space, and a plurality of through holes are formed on the partition plate for allowing the gas-liquid mixture in the inner ring space to pass through The through holes enter the outer ring space; and A liquid collection port in communication with the inner ring space for allowing the process liquid to be discharged from the liquid collection port; and A plurality of gas recovery devices are respectively connected to the plurality of recovery rings of the liquid recovery device, and are used to discharge the collected gas-liquid mixture. 如請求項4之單晶圓濕處理設備,其中每一該回收環還包含: 一環形上蓋; 一環形底板,與該環形上蓋對應設置; 一外環壁,與該環形上蓋之外周緣和該環形底板之外周緣連接; 一氣體通道口,設置在該外環壁上,且與對應的其中之一該氣體回收裝置連接,其中該分隔板設置在該環形上蓋和該環形底板之間,以及該液體接收口位在該環形上蓋之內周緣和該環形底板之內周緣之間。For example, the single-wafer wet processing equipment of claim 4, wherein each of the recycling loops also includes: A ring-shaped upper cover; An annular bottom plate corresponding to the annular upper cover; An outer ring wall connected with the outer periphery of the annular upper cover and the outer periphery of the annular bottom plate; A gas passage opening is arranged on the outer ring wall and connected to one of the corresponding gas recovery devices, wherein the partition plate is arranged between the annular upper cover and the annular bottom plate, and the liquid receiving opening is located at Between the inner periphery of the annular upper cover and the inner periphery of the annular bottom plate. 如請求項1之單晶圓濕處理設備,其中每一該氣體回收裝置的該風箱還包含一觀視窗,且藉由該觀視窗可看到該風箱的內部;以及 其中該單晶圓濕處理設備還包含複數個水管路,且每一該氣體回收裝置的該風箱與一個該水管路連接,以及藉由該水管路將潔淨水傳輸至該風箱以清洗該風箱的內部。For example, the single-wafer wet processing equipment of claim 1, wherein the bellows of each gas recovery device further includes a viewing window, and the inside of the bellows can be seen through the viewing window; and The single-wafer wet processing equipment further includes a plurality of water pipes, and the wind box of each gas recovery device is connected to a water pipe, and clean water is transmitted to the wind box through the water pipe to clean the water pipe. The inside of the bellows. 一種單晶圓濕處理設備,包含: 一旋轉台,用於放置一晶圓; 一液體供應裝置,設置在該旋轉台上方,用於對該晶圓施加複數種製程液體; 一液體回收裝置,環繞地設置在該旋轉台的周圍,並且可沿著一垂直方向相對該旋轉台移動,其中該液體回收裝置包含複數個沿著該垂直方向堆疊設置之回收環,其中每一該回收環包含: 一液體接收口,與該旋轉台對準,用於接收對應的其中一種製程液體及其夾帶的氣液混合物; 一分隔板,設置在該回收環的內部以分隔出一內環空間和一外環空間,其中該內環空間用於承接從該液體接收口進入的該製程液體及其夾帶的該氣液混合物,並且該分隔板阻擋該製程液體從該內環空間流至該外環空間,以及該分隔板上形成有複數個通孔,用於讓該內環空間內的該氣液混合物經由該等通孔進入該外環空間;以及 一液體收集口,與該內環空間連通,用於讓該製程液體從該液體收集口排出;以及 複數個氣體回收裝置,分別與該液體回收裝置之該複數個回收環對應連接,用於將收集的該氣液混合物排出。A single wafer wet processing equipment, including: A rotating table for placing a wafer; A liquid supply device, arranged above the rotating table, for applying a plurality of process liquids to the wafer; A liquid recovery device is circumferentially arranged around the rotating platform and can move relative to the rotating platform along a vertical direction, wherein the liquid recovery device includes a plurality of recovery rings stacked along the vertical direction, each of which The recycling ring contains: A liquid receiving port, aligned with the rotating table, for receiving one of the corresponding process liquids and the gas-liquid mixture entrained therein; A partition plate is arranged inside the recovery ring to separate an inner ring space and an outer ring space, wherein the inner ring space is used to receive the process liquid entering from the liquid receiving port and the entrained gas and liquid And the partition plate blocks the process liquid from flowing from the inner ring space to the outer ring space, and a plurality of through holes are formed on the partition plate for allowing the gas-liquid mixture in the inner ring space to pass through The through holes enter the outer ring space; and A liquid collection port in communication with the inner ring space for allowing the process liquid to be discharged from the liquid collection port; and A plurality of gas recovery devices are respectively connected to the plurality of recovery rings of the liquid recovery device, and are used to discharge the collected gas-liquid mixture. 如請求項7之單晶圓濕處理設備,其中每一該回收環還包含: 一環形上蓋; 一環形底板,與該環形上蓋對應設置; 一外環壁,與該環形上蓋之外周緣和該環形底板之外周緣連接; 一氣體通道口,設置在該外環壁上,且與對應的其中之一該氣體回收裝置連接,其中該分隔板設置在該環形上蓋和該環形底板之間,以及該液體接收口位在該環形上蓋之內周緣和該環形底板之內周緣之間。For example, the single-wafer wet processing equipment of claim 7, wherein each recycling ring also includes: A ring-shaped upper cover; An annular bottom plate corresponding to the annular upper cover; An outer ring wall connected with the outer periphery of the annular upper cover and the outer periphery of the annular bottom plate; A gas passage opening is arranged on the outer ring wall and connected to one of the corresponding gas recovery devices, wherein the partition plate is arranged between the annular upper cover and the annular bottom plate, and the liquid receiving opening is located at Between the inner periphery of the annular upper cover and the inner periphery of the annular bottom plate. 如請求項7之單晶圓濕處理設備,其中每一該氣體回收裝置包含: 一風箱,包含一第一連接口和一第二連接口,其中該第一連接口與對應的回收環連接,使得該回收環內的該氣液混合物經由該第一連接口進入該風箱的內部;以及 一排氣管,與該風箱之該第二連接口連接,用於將收集的該氣液混合物排出。For example, the single-wafer wet processing equipment of claim 7, wherein each of the gas recovery devices includes: A wind box includes a first connection port and a second connection port, wherein the first connection port is connected to a corresponding recovery ring, so that the gas-liquid mixture in the recovery ring enters the wind box through the first connection port Inside; and An exhaust pipe is connected with the second connection port of the wind box, and is used to discharge the collected gas-liquid mixture. 如請求項9之單晶圓濕處理設備,其中每一該氣體回收裝置之該風箱還包含:一上表面、一下表面、一側表面、一空腔,該上表面與該下表面相對設置,且該側表面位在該上表面與該下表面之間,以及該空腔是由該上表面、該下表面、和該側表面互相連接而組成,其中該第一連接口設置在該側表面,以及該第二連接口設置在該上表面。For example, the single-wafer wet processing equipment of claim 9, wherein the wind box of each gas recovery device further includes: an upper surface, a lower surface, a side surface, and a cavity, and the upper surface and the lower surface are arranged oppositely, And the side surface is located between the upper surface and the lower surface, and the cavity is formed by connecting the upper surface, the lower surface, and the side surface to each other, wherein the first connection port is provided on the side surface , And the second connecting port is provided on the upper surface. 如請求項9之單晶圓濕處理設備,其中每一該氣體回收裝置之該風箱還包含:一排液口,設置在該下表面,使得該氣液混合物通過該風箱而產生的凝結液體經由該排液口排出。For example, the single-wafer wet processing equipment of claim 9, wherein the wind box of each of the gas recovery devices further includes: a liquid discharge port arranged on the lower surface, so that the gas-liquid mixture passes through the wind box to produce condensation The liquid is discharged through the discharge port. 如請求項9之單晶圓濕處理設備,其中每一該氣體回收裝置的該風箱還包含一觀視窗,且藉由該觀視窗可看到該風箱的內部;以及 其中該單晶圓濕處理設備還包含複數個水管路,且每一該氣體回收裝置的該風箱與一個該水管路連接,以及藉由該水管路將潔淨水傳輸至該風箱以清洗該風箱的內部。For example, the single-wafer wet processing equipment of claim 9, wherein the bellows of each gas recovery device further includes a viewing window, and the inside of the bellows can be seen through the viewing window; and The single-wafer wet processing equipment further includes a plurality of water pipes, and the wind box of each gas recovery device is connected to a water pipe, and clean water is transmitted to the wind box through the water pipe to clean the water pipe. The inside of the bellows.
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