TW202040876A - Plasma antenna and plasma processing apparatus including the same - Google Patents

Abstract

The present invention relates to a plasma antenna and a plasma processing apparatus including the same. In a plasma antenna for generating plasma from a source gas by forming an electric field, the plasma antenna is formed so as to wrap around a chamber which includes an inner region passing through the plasma processing substrate. The plasma antenna comprises: a first antenna circuit extending from one side to the other side on a plane to form a C shape; a second antenna circuit extending from one side to the other side on a plane different from the first antenna circuit to form a C shape; and a connection shaft connected between one side of the first antenna circuit and one side of the second antenna circuit. The other side of the first antenna circuit is connected to a high-frequency generation unit, and the other side of the second antenna circuit is connected to the ground. The interiors of the first antenna circuit and the second antenna circuit are filled with the same metal material as the outside thereof, so that the interiors thereof are non-hollow.

Description

Plasma antenna and its plasma processing device

The invention relates to a plasma antenna and a plasma processing device thereof.

The plasma processing apparatus for processing the substrate S by plasma includes a chamber 100 and a plasma antenna 200.

The chamber 100 includes: a forming area 110, which is an internal area where plasma is formed; a processing area 120, which is used to process the internal area of the substrate S by plasma; and a discharge area 130, which is connected to a pump to discharge by-products of the processed substrate S Internal area.

The plasma antenna 200 is arranged to surround the periphery of the formation area 110, and an electric field is formed in the formation area 110, so that the source gas supplied to the formation area 110 generates plasma.

As shown in FIG. 1, in order to adjust the temperature in the prior art, such a plasma antenna 200 uses a hollow 1h formed inside to circulate fluid.

That is, the plasma antenna 200 is formed of a tube having a hollow 1h inside.

At this time, the plasma antenna 200 is wound in a spiral shape around the formation area 110.

However, if the radius of curvature of the outer and inner sides of the plasmonic antenna 200 when wound in a spiral shape is below a certain limit, the hollow 1h circular shape cannot be maintained. Therefore, the radius of curvature should be kept larger than a certain limit. At this time, the diameter of the corresponding formation region 110 is also increased by the maintenance amount of the larger radius of curvature.

In addition, as shown in the enlarged view of the section 1a of the plasma antenna 200 in FIG. 1, the section of the plasma antenna 200 has a circular shape with a hollow 1h formed therein. Such a shape reduces the area where the high frequency is emitted, and the fluid circulating inside affects the high frequency radiation.

As a result, there is a problem of reducing the rate of plasma processing of the substrate S, that is, the etching rate.

The object of the present invention is to provide a plasma antenna and a plasma processing device thereof.

The plasma antenna of an embodiment of the present invention forms an electric field to generate plasma from a source gas, wherein the plasma antenna is formed to be able to wrap around a chamber that includes an inner region of a substrate processed by plasma, and The plasma antenna includes: a first antenna line extending from one side to the other side on a plane to have a C shape; a second antenna line extending from one side to the other on a plane different from the first antenna line One side extends to have a C shape; and a connecting shaft is connected between one side of the first antenna line and one side of the second antenna line, and the other side of the first antenna line is connected to the high-frequency generation The other side of the second antenna line is connected to the ground, and the inside of the first antenna line and the second antenna line are filled with the same metal material as the outside, so as not to form a hollow inside.

In the plasma antenna according to an embodiment of the present invention, in a plasma antenna that forms an electric field to generate plasma from a source gas, one of the surfaces constituting the cross section of the plasma antenna is a straight line extending in a vertical direction with the upper surface as the vertical direction.

Preferably, the cross section of the plasma antenna is quadrilateral.

Preferably, the inside of the plasma antenna is filled with the same metal material as the outside, so as not to form a hollow inside.

Preferably, the plasma antenna is C-shaped.

The plasma antenna of an embodiment of the present invention forms an electric field to generate plasma from a source gas. The plasma antenna includes a first antenna line extending from one side to the other on a plane. Having a C shape; a second antenna line extending from one side to another on a plane different from the first antenna line to have a C shape; and a connecting shaft connected to one side of the first antenna line And one side of the second antenna line.

Preferably, the connecting shaft has a vertically extending strip shape to connect one side of the first antenna line and one side of the second antenna line on a vertical line.

Preferably, the diameter of the second antenna line is greater than the diameter of the first antenna line, and the connecting shaft is in the shape of a horizontally extending bar, so that the top surface of one side is connected to one side of the first antenna line. Connected, the bottom surface of the other side is connected to one side of the second antenna line.

A plasma processing apparatus including a plasma antenna according to an embodiment of the present invention includes: a chamber including an inner area for processing a substrate by plasma; and a plasma antenna arranged to wrap around the chamber and in the inner area of the chamber An electric field is formed to generate plasma from the source gas supplied to the inner region of the chamber, and the surface that forms the cross section of the plasma antenna facing the chamber is a straight line extending in the vertical direction.

Preferably, the cross section of the plasma antenna is quadrilateral.

Preferably, the inside of the plasma antenna is filled with the same metal material as the outside, so as not to form a hollow inside.

Preferably, the plasma antenna is C-shaped.

A plasma processing apparatus including a plasma antenna according to an embodiment of the present invention includes: a chamber including: a formation area, which is an inner area where plasma is formed; and a processing area, which is an inner area of a substrate processed by the plasma The plasma antenna is arranged to wrap around the formation area, an electric field is formed in the formation area and plasma is generated from the source gas supplied to the formation area, the formation area includes: a first formation area located above the processing area; The second forming area is located between the first forming area and the processing area. The plasma antenna includes: a first plasma antenna arranged around the first forming area; and a second plasma antenna arranged on the Around the second formation area, the first plasmonic antenna includes: a 1A antenna line extending from one side to the other side in a plane to have a C shape; a 2A antenna line that is different from the 1A antenna line The plane extends from one side to the other side to have a C shape; a connecting shaft is connected between one side of the 1A antenna line and one side of the 2A antenna line, and the other side of the 1A antenna line is connected to The high-frequency generator is connected, the other side of the 2A antenna line is connected to the ground, and the inside of the 1A antenna line and the 2A antenna line are filled with the same metal material as the outside so as not to form a hollow inside.

A plasma processing apparatus including a plasma antenna according to an embodiment of the present invention includes: a chamber including an inner area for processing a substrate by plasma; and a plasma antenna arranged to wrap around the chamber and in the inner area of the chamber An electric field is formed to generate plasma from the source gas supplied to the inner region of the chamber, the plasma antenna includes: a first antenna line extending from one side to the other on a plane to have a C shape; the next day The wire line is located at a position spaced downward from the first antenna line, and extends from one side to the other to have a C shape; a connecting shaft is connected to one side of the first antenna line and the second day Line between one side of the line.

Preferably, the connecting shaft has a vertically extending strip shape to connect one side of the first antenna line and one side of the second antenna line on a vertical line.

Preferably, the diameter of the second antenna line is greater than the diameter of the first antenna line, and the connecting shaft is in the shape of a horizontally extending bar, so that the top surface of one side is connected to one side of the first antenna line. Connected, the bottom surface of the other side is connected to one side of the second antenna line.

A plasma processing apparatus including a plasma antenna according to an embodiment of the present invention includes: a chamber including: a formation area, which is an inner area where plasma is formed; and a processing area, which is an inner area of a substrate processed by the plasma The plasma antenna is arranged to wrap around the formation area, an electric field is formed in the formation area and plasma is generated from the source gas supplied to the formation area, the formation area includes: a first formation area located above the processing area; The second forming area is located between the first forming area and the processing area. The plasma antenna includes: a first plasma antenna arranged around the first forming area; and a second plasma antenna arranged on the Around the second formation area.

Preferably, more than one of the first plasma antenna and the second plasma antenna is a cross-sectional surface facing the cavity is a straight line extending in a vertical direction.

Preferably, the first forming area and the second forming area are cylindrical, and the diameter of the second forming area is larger than the diameter of the first forming area.

Preferably, the first plasma antenna includes: a 1A antenna line extending from one side to the other side in a plane to have a C shape; a 2A antenna line located at a downwardly spaced distance from the 1A antenna line The position extends from one side to the other to have a C shape; and the connecting shaft is connected between one side of the 1A antenna line and one side of the 2A antenna line.

Preferably, the second plasma antenna includes: a 1B antenna line extending from one side to the other to have a C shape; a 2B antenna line located at a position spaced downward from the 1B antenna line, from one The side extends to the other side to have a C shape; and the second connecting shaft is connected between one side of the 1B antenna line and one side of the 2B antenna line.

Preferably, the first forming area has a cylindrical shape, and the second forming area gradually increases in diameter from the upper side to the lower side, so that the lower side is formed with a larger diameter than the first forming area.

Preferably, the diameter of the 2B antenna line is larger than the diameter of the 1B antenna line to correspond to the diameter of the second formation area gradually increasing from the upper side to the lower side.

Preferably, the diameter of the 1B antenna line is the same as the diameter of the 2B antenna line.

Preferably, the processing area includes: a first processing wall having a diameter larger than that of the second forming area, a hole connecting the processing area and the second forming area is formed in the center, the first processing wall and the second forming area The lower side of the forming area is joined; and the second processing wall, which defines the horizontal length of the processing area.

Preferably, the plasma processing apparatus further includes: a first heater located above the first forming area; and a second heater coupled to the first processing wall so as to be located apart from the second forming area Around.

Preferably, the plasma processing apparatus further includes: a cooling part coupled to the first processing wall so as to be located around the second heater, so as to reduce the temperature transferred from the second heater.

Preferably, based on the second processing wall, the second heater is located inside and the cooling part is located outside.

Preferably, the plasma processing device further includes: a cover that contains the forming area, the first heater and the second heater; a fan is combined with the cover to return the surrounding air of the plasma antenna ring.

The plasma antenna of the embodiment of the present invention has the effect of increasing the etch rate.

Specific embodiments are described below to illustrate the implementation of the present invention, but they are not used to limit the scope of the present invention.

The plasma processing apparatus for processing the substrate S by plasma includes a chamber 100 and a plasma antenna 200.

The chamber 100 includes: a forming area 110, which is an internal area where plasma is formed; a processing area 120, which is used to process the internal area of the substrate S by plasma; and a discharge area 130, which is connected to a pump to discharge by-products of the processed substrate S Internal area.

The plasma antenna 200 is arranged to surround the periphery of the formation area 110, an electric field is formed in the formation area 110 and plasma is generated from the source gas supplied to the formation area 110.

As shown in FIG. 1, in order to adjust the temperature in the prior art, such a plasma antenna 200 circulates fluid by forming a hollow 1h inside.

That is, the plasma antenna 200 is formed of a tube having a hollow 1h inside.

At this time, the plasma antenna 200 is wound in a spiral shape around the formation area 110.

However, if the radius of curvature of the outer and inner sides of the plasmonic antenna 200 when wound in a spiral shape is below a certain limit, the hollow 1h circular shape cannot be maintained. Therefore, the radius of curvature should be kept larger than a certain limit. At this time, the diameter of the corresponding formation region 110 is also increased by the maintenance amount of the larger radius of curvature.

In addition, as shown in the enlarged view of the section 1a of the plasma antenna 200 in FIG. 1, the section of the plasma antenna 200 has a circular shape with a hollow 1h formed therein. Such a shape reduces the area where the high frequency is emitted, and the fluid circulating inside affects the high frequency radiation.

As a result, there is a problem of reducing the rate of plasma processing of the substrate S, that is, the etching rate.

In order to solve such problems, as shown in FIGS. 2 and 3, the plasma antenna 200 of the embodiment of the present invention includes the following features.

First, in the plasma antenna 200 that forms an electric field to generate plasma from a source gas, one of the surfaces constituting the cross section of the plasma antenna 200 is a straight line extending in the vertical direction.

In this way, when the inner surface 2a is a straight line extending in the vertical direction among the surfaces constituting the cross-section of the plasma antenna 200, the surface area becomes wider along the straight line, which has the effect of increasing the amount of high frequency radiated by the plasma antenna 200 .

In addition, when the outer surface 2b is a straight line extending in the vertical direction among the surfaces constituting the cross section of the plasmonic antenna 200, the surface area becomes wider along the straight line, and the enlarged surface area is cooled by the fan 800 described later. The effect of effectively reducing the temperature of the plasma antenna 200.

Next, in order to include at least one of the case where the inner side surface 2a is a straight line extending in the vertical direction and the case where the outer side surface 2b is a straight line extending in the vertical direction, the cross section of the plasma antenna 200 is a polygon (for example, a quadrilateral).

In this way, when the cross section of the plasmonic antenna 200 is a quadrilateral, both the case where the inner side surface 2a is a straight line extending in the vertical direction and the case where the outer side surface 2b is a straight line extending in the vertical direction are all satisfied. As a result, the surface area is widened along a straight line and the amount of high frequency radiated from the plasma antenna 200 can be increased, and the widened surface area is cooled by the fan 800 described later, so there is an effect that the temperature of the plasma antenna 200 can be effectively reduced.

Next, the inside of the plasma antenna 200 is filled with the same metal material (for example, copper) as the outside so as not to form a hollow inside.

If a hollow core is not formed in the plasma antenna 200 in this way, thermal resistance is reduced, and heat transfer becomes easier. As a result, the temperature of the outer surface 2b cooled by the fan 800 described later is easily transmitted to the inner surface 2a, and therefore there is an effect that the temperature of the plasma antenna 200 can be effectively reduced by the fan 800 alone.

In addition, when the inside and outside are made of copper, since the thermal resistance is lower than that of other metal materials, the effect of lowering the temperature can be effectively increased.

Next, the plasmonic antenna 200 has a C shape extending from one side to the other side.

The following description is a specific embodiment of the plasma antenna 200 described above.

As shown in FIGS. 2 and 3, the plasma antenna 200 of the plasma antenna 200 according to the embodiment of the present invention includes a first antenna line 210, a second antenna line 220 and a connecting shaft 300.

The first antenna line 210 extends from one side to the other side to have a C shape.

The second antenna line 220 is located at a position spaced downward from the first antenna line 210 and extends from one side to the other to have a C shape.

The connecting shaft 300 is connected between one side of the first antenna line 210 and one side of the second antenna line 220.

That is, one side of the connecting shaft 300 is connected to one side of the first antenna line 210, the other side of the connecting shaft 300 is connected to one side of the second antenna line 220, and the connecting shaft 300 is used as a medium for electrical connection. Line line 210 and second antenna line 220.

At this time, the other side of the first antenna line 210 is electrically connected to the high-frequency generating part, the other side of the second antenna line 220 is electrically connected to the ground, or the other side of the first antenna line 210 is electrically connected to the second All the other sides of the antenna line 220 are electrically connected to the high-frequency generator.

The connecting shaft 300 has various shapes along the diameter of the first antenna line 210 and the second antenna line 220.

As an embodiment, as shown in FIG. 2, the first antenna line 210 and the second antenna line 220 are formed to have the same diameter as each other.

At this time, the connecting shaft 300 has a vertically extending strip shape to connect the side of the first antenna line 210 and the side of the second antenna line 220 on the vertical line.

As another embodiment, as shown in FIG. 3, the diameter of the second antenna line 220 is formed to be larger than the diameter of the first antenna line 210.

At this time, the connecting shaft 300 is in the shape of a horizontally extending strip, so that the top surface of one side is connected to one side of the first antenna line 210 and the bottom surface of the other side is connected to one side of the second antenna line 220.

The coupling of the connecting shaft 300 with the first antenna line 210 and the second antenna line 220 is by forming a protrusion on one side of the coupling part and a groove on the other side for insertion coupling, or fastening by bolts or rods.

A specific embodiment of the plasma processing apparatus including the plasma antenna 200 described above will be described later.

As shown in FIG. 4, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes a chamber 100 and a plasma antenna 200.

The chamber 100 includes an inner region of the substrate S that is processed by plasma.

The chuck C on which the substrate S is placed is located inside the chamber 100.

The plasma antenna 200 is arranged to surround the periphery of the chamber 100, an electric field is formed in the inner region of the chamber 100 and plasma P is generated from a source gas supplied to the inner region of the chamber 100.

The following description divides the characteristics of the plasma antenna 200 into a first antenna characteristic and a second antenna characteristic.

At this time, the first antenna feature and the second antenna feature can be used individually, or they can be combined and used together.

The characteristics of the first antenna are described later.

As shown in FIGS. 2 to 4, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes the following features.

First, the surface 2a facing the chamber 100 among the surfaces constituting the cross section of the plasmonic antenna 200 is a straight line extending in the vertical direction.

In this way, when the surface 2a facing the chamber 100 among the surfaces constituting the cross section of the plasma antenna 200 is a straight line extending in the vertical direction, the radiation surface area becomes wider along the straight line, and the radiation height from the plasma antenna 200 can be increased. The amount of frequency effect.

In addition, when the surface 2b opposite to the surface facing the chamber 100 among the surfaces constituting the cross section of the plasma antenna 200 is a straight line extending, the surface area becomes wider along the straight line, and the wider surface area is described later by the fan 800 Cooling therefore has the effect of effectively reducing the temperature of the plasma antenna 200.

Next, in order to include at least one of the case where the inner side surface 2a is a straight line extending in the vertical direction and the case where the outer side surface 2b is a straight line extending in the vertical direction, the cross section of the plasma antenna 200 is a polygon (for example, a quadrilateral).

In this way, when the cross section of the plasmonic antenna 200 is a quadrilateral, both the case where the inner side surface 2a is a straight line extending in the vertical direction and the case where the outer side surface 2b is a straight line extending in the vertical direction are all satisfied. As a result, the surface area is widened along a straight line and the amount of high frequency radiated from the plasma antenna 200 can be increased, and the widened surface area is cooled by the fan 800 described later, so there is an effect that the temperature of the plasma antenna 200 can be effectively reduced.

Next, the inside of the plasma antenna 200 is filled with the same metal material (for example, copper) as the outside so as not to form a hollow inside.

If a hollow core is not formed in the plasma antenna 200 in this way, thermal resistance is reduced, and heat transfer becomes easier. As a result, the temperature of the outer surface 2b cooled by the fan 800 described later can easily transfer heat to the inner surface 2a, and therefore there is an effect that the temperature of the plasma antenna 200 can be effectively reduced by the fan 800 alone.

In addition, when the inside and outside are made of copper, since the thermal resistance is lower than that of other metal materials, the effect of effectively reducing the temperature is increased.

Next, the plasmonic antenna 200 has a C shape extending from one side to the other side.

The characteristics of the second antenna will be described later.

As shown in FIGS. 2 and 3, the embodiment of the present invention includes a plasma processing apparatus of a plasma antenna 200, and the plasma antenna 200 includes a first antenna line 210, a second antenna line 220 and a connecting shaft 300.

The first antenna line 210 extends from one side to the other side to have a C shape.

The second antenna line 220 is located at a position spaced downward from the first antenna line 210 and extends from one side to the other to have a C shape.

The connecting shaft 300 is connected between one side of the first antenna line 210 and one side of the second antenna line 220.

The connecting shaft 300 may have various shapes along the shape of the first antenna line 210 and the second antenna line 220.

As an embodiment, as shown in FIG. 2, the first antenna line 210 and the second antenna line 220 are formed to have the same diameter as each other.

At this time, the connecting shaft 300 has a vertically extending strip shape to connect the side of the first antenna line 210 and the side of the second antenna line 220 on the vertical line.

As another embodiment, as shown in FIG. 3, the diameter of the second antenna line 220 is formed to be larger than the diameter of the first antenna line 210.

At this time, the connecting shaft 300 is in the shape of a horizontally extending strip, so that the top surface of one side is connected to one side of the first antenna line 210 and the bottom surface of the other side is connected to one side of the second antenna line 220.

The above-mentioned plasmonic antenna 200 can be used in various ways according to the shape of the chamber 100 that is changed and designed according to the processing purpose of the substrate S.

As such an example, when the plasma antenna 200 is applied to reactive ion etching (Reactive Ion Etch, RIE), the use of the plasma antenna 200 is described as follows.

5 and 6 respectively include a first forming area 111 and a second forming area 112 of different shapes.

FIG. 5 shows that the first formation area 111 and the second formation area 112 are formed separately, and FIG. 6 shows that the first formation area 111 and the second formation area 112 are formed as one body. This is different.

In this regard, the same points in FIGS. 5 and 6 will be described together, and the different points will be described separately.

First, the similarities between the first formation area 111 and the second formation area 112 will be described later.

As shown in FIG. 5 and FIG. 6, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes a chamber 100 and a plasma antenna 200.

The chamber 100 includes a formation area 110, which is an inner area where plasma is formed, and a processing area 120, which is an inner area where the substrate S is processed by plasma.

The plasma antenna 200 is arranged to surround the periphery of the formation area 110, an electric field is formed in the formation area 110 and plasma is generated from the source gas supplied to the formation area 110.

The formation area 110 includes a first formation area 111 and a second formation area 112.

The first forming area 111 is located above the processing area 120.

The second formation area 112 is located between the first formation area 111 and the processing area 120.

The plasma antenna 200 includes a first plasma antenna 200A and a second plasma antenna 200B.

The first plasmonic antenna 200A is arranged around the first formation area 111.

The second plasma antenna 200B is arranged around the second formation area 112.

The chamber 100 includes a discharge area 130, which is an internal area connected to a pump to discharge by-products of the processed substrate S.

One or more of the first plasmonic antenna 200A and the second plasmonic antenna 200B is a cross-sectional surface, and the surface facing the chamber 100 is a straight line extending in the vertical direction.

The first plasma antenna 200A includes a 1A antenna line 210A, a 2A antenna line 220A, and a first connection shaft 310.

The 1A antenna line 210A extends from one side to the other side to have a C shape.

The 2A antenna line 220A is located at a position spaced downward from the 1A antenna line 210A, and extends from one side to the other to have a C shape.

The first connecting shaft 310 is connected between one side of the 1A antenna line 210A and the side of the 2A antenna line 220A.

The second plasma antenna 200B includes a 1B antenna line 210B, a 2B antenna line 220B, and a second connecting shaft 320.

The 1B antenna line 210B extends from one side to the other side to have a C shape.

The 2B antenna line 220B is located at a position spaced downward from the 1B antenna line 210B, and extends from one side to the other to have a C shape.

The second connecting shaft 320 is connected between one side of the 1B antenna line 210B and the side of the 2B antenna line 220B.

Next, the difference between the first formation area 111 and the second formation area 112 will be described later.

As shown in FIG. 5, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes the following features.

The first forming area 111 and the second forming area 112 have a cylindrical shape, and the walls of the areas are defined to have a cylindrical shape that is hollow in the vertical direction.

The diameter of the second formation area 112 is greater than the diameter of the first formation area 111.

The first formation area 111 and the second formation area 112 shown in FIG. 5 are formed separately, and the part for connecting them is formed of a metal material. Therefore, there is a problem that it is difficult to adjust the temperature of the first formation area 111 and the second formation area 112.

In order to solve such problems, the present invention proposes two solutions.

First, as a first solution, the shapes of the first formation area 111 and the second formation area 112 are changed.

Next, as a second solution, the first heater 410 is located in the first formation area 111 and the second heater 420 is located in the second formation area 112.

Such first solution and second solution can be used separately or together.

First, the first solution will be described in detail later.

As shown in FIGS. 6 and 8, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes the following features.

The first forming area 111 has a cylindrical shape, and the wall defining the area has a cylindrical shape that is hollow in the vertical direction.

The second forming area 112 gradually increases in diameter from the upper side to the lower side so that the lower side is formed with a larger diameter than the first forming area 111.

It is prescribed that the wall of the second forming area 112 has a reversed funnel shape whose diameter gradually increases as it approaches one side.

The walls of the first formation region 111 and the second formation region 112 are defined as a non-conductor and are integrally formed of a material with high heat resistance (for example, ceramic).

As shown in FIGS. 6 and 7, the diameter of the 2B-th antenna line 220B may be larger than the diameter of the 1B-th antenna line 210B to correspond to the diameter of the second formation area 112 gradually increasing from the upper side to the lower side.

In addition, as shown in FIG. 8, the diameter of the second formation area 112 gradually increases from the upper side to the lower side, and the diameter of the 1B antenna line 210B is the same as the diameter of the 2B antenna line 220B.

Next, the second solution will be described in detail later.

As shown in FIGS. 5 and 6, the processing area 120 of the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes a first processing wall 610, a second processing wall 620, a first heater 410, and a second Heater 420.

The diameter of the first processing wall 610 is larger than the diameter of the second forming area 112, and a hole connecting the processing area 120 and the second forming area 112 is formed in the center, and is connected to the lower side of the second forming area 112.

The second processing wall 620 defines the horizontal length of the processing area 120.

The first heater 410 is located above the first formation area 111.

The second heater 420 is combined with the first processing wall 610 to be located around the second forming area 112.

The first heater 410 and the second heater 420 may be a heating element that uses electric heating or a tube that circulates high temperature fluid inside to generate heat.

In the process of transferring heat from the first forming area 111 to the second forming area 112 by the first heater 410, the temperature of the heat decreases.

At this time, heat is transferred from the second formation area 112 to the first formation area 111 by the second heater 420. That is, the second heater 420 supplements the insufficient heat transfer from the first formation area 111 to the second formation area 112.

In this way, because the second heater 420 can increase the temperature of the second formation area 112 to an appropriate level (experimentally, very good results can be obtained when the second heater 420 is increased to 80 degrees to 130 degrees) ), thus preventing by-products from adhering to the wall of the prescribed formation area 110, prolonging the cleaning cycle, and also having the effect of increasing the etch rate.

As shown in FIGS. 5 and 6, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes a cooling part 500 that lowers the temperature.

The temperature-reducing cooling part 500 is combined with the first processing wall 610 so as to be located around the second heater 420.

At this time, a fluid having a temperature lower than that of the second heater 420 circulates inside the cooling unit 500, and the cooling unit 500 can block or reduce the heat conducted from the second heater 420 to the outside of the first processing wall 610 .

If the high temperature of the second heater 420 is conducted to the outside of the first processing wall 610 in this way, the user may be scalded, so the cooling part 500 has the effect of preventing this.

As shown in FIGS. 5 and 6, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes the following features.

Taking the second processing wall 620 as a reference, the second heater 420 is located inside, and the cooling part 500 is located outside.

As shown in FIGS. 5 and 6, the plasma processing apparatus including the plasma antenna 200 according to the embodiment of the present invention includes a cover 700 and a fan 800.

The cover 700 wraps the forming area 110, the first heater 410, and the second heater 420 from the outside.

The fan 800 is combined with the cover 700 to circulate the surrounding air of the plasma antenna 200.

The plasma antenna 200 and its plasma processing apparatus described above have been experimentally confirmed to have an effect of increasing the etch rate compared to the prior art.

In particular, in the case of combining the aforementioned constitutions, it was confirmed that the etch rate was increased by 50% compared with the prior art.

The disclosure in this case is a preferred embodiment, and any partial changes or modifications that are derived from the technical ideas of the case and can be easily inferred by those who are familiar with the art do not deviate from the scope of the patent right of the case.

In summary, regardless of the purpose, means, and efficacy of this case, it is showing its technical characteristics that are very different from conventional knowledge, and its first invention is suitable for practical use, and it is also in compliance with the patent requirements of the invention. I urge your examiner to observe and pray. Granting patents as soon as possible will benefit the society and feel the virtues.

100: chamber 110: forming area 111: First Formation Area 112: Second Formation Area 120: Processing area 130: discharge area 200: Plasma antenna 200A: The first plasma antenna 200B: second plasma antenna 210: The first antenna line 210A: 1A antenna line 210B: 1B antenna line 220: second antenna line 220A: 2A antenna line 220B: 2B antenna line 300: connecting shaft 310: The first connecting shaft 320: second connecting shaft 410: first heater 420: second heater 500: Cooling Department 610: First Treatment Wall 620: second treatment wall 700: Cover 800: fan C: Chuck S: substrate 1h: hollow 2a: inside 2b: outer side

Figure 1 is a diagram of a prior art plasma antenna; Figures 2 and 3 are diagrams about plasma antennas; 4 to 6 are diagrams related to the plasma processing apparatus; Figure 7 is a diagram of a plasma antenna; Fig. 8 is a diagram related to a plasma processing apparatus.

200: Plasma antenna

210: The first antenna line

220: second antenna line

300: connecting shaft

2a: inside

2b: outer side

Claims (19)

A plasma antenna that forms an electric field to generate a plasma from a source gas, wherein the plasma antenna is formed to be able to wrap around a chamber including an inner region of a substrate processed by a plasma, the plasma The body antenna includes: A first antenna line extending from one side to the other side in a plane to have a C shape; A second antenna line extending from one side to the other on a plane different from the first antenna line to have a C shape; and A connecting shaft is connected between one side of the first antenna line and one side of the second antenna line, the other side of the first antenna line is connected to the high-frequency generating part, the second antenna The other side of the line is connected to the ground, and the inside of the first antenna line and the second antenna line are filled with the same metal material as the outside, so as not to form a hollow inside. The plasma antenna according to claim 1, wherein the connecting shaft is in the shape of a vertically extending bar to connect one side of the first antenna line and one side of the second antenna line on a vertical line. The plasma antenna according to claim 1, wherein the diameter of the second antenna line is greater than the diameter of the first antenna line, and the connecting shaft is in the shape of a horizontally extending strip, so that the top surface of one side is in line with One side of the first antenna line is connected, and the bottom surface of the other side is connected to one side of the second antenna line. The plasma antenna according to any one of claims 1 to 3, wherein the cross section of the plasma antenna is quadrilateral. A plasma processing device including a plasma antenna, the plasma processing device including: A chamber, including the internal area of the substrate processed by a plasma; A plasma antenna arranged to wrap around the chamber, an electric field is formed in the inner region of the chamber and a plasma is generated from the source gas supplied to the inner region of the chamber, The plasma antenna includes: A first antenna line extending from one side to the other side in a plane to have a C shape; A second antenna line extending from one side to the other side on a plane different from the first antenna line to have a C shape; and A connecting shaft is connected between one side of the first antenna line and one side of the second antenna line, the other side of the first antenna line is connected to the high-frequency generating part, the second antenna The other side of the line is connected to the ground, and the inside of the first antenna line and the second antenna line are filled with the same metal material as the outside, so as not to form a hollow inside. The plasma processing apparatus including a plasma antenna according to claim 5, wherein the connecting shaft is in the shape of a vertically extending bar to connect one side of the first antenna line on the vertical line and the second antenna One side of the line. The plasma processing apparatus including a plasma antenna according to claim 5, wherein the diameter of the second antenna line is formed to be larger than the diameter of the first antenna line, and the connecting shaft is in a horizontally extending strip shape, The top surface of one side is connected to one side of the first antenna line, and the bottom surface of the other side is connected to one side of the second antenna line. A plasma processing device including a plasma antenna, the plasma processing device including: A chamber, the chamber includes: a formation area, which is an inner area where a plasma is formed; and a processing area, which is used to process the inner area of the substrate by the plasma; A plasma antenna arranged to wrap around the formation area, an electric field is formed in the formation area and a plasma is generated from the source gas supplied to the formation area, The formation area includes: A first formation area located above the processing area; and A second forming area located between the first forming area and the processing area, The plasma antenna includes: A first plasma antenna arranged around the first formation area; and A second plasma antenna arranged around the second formation area, The first plasma antenna includes: A 1A antenna line extending from one side to the other side in a plane to have a C shape; A 2A antenna line extending from one side to the other side on a plane different from the 1A antenna line to have a C shape; and A connecting shaft is connected between one side of the 1A antenna line and one side of the 2A antenna line, the other side of the 1A antenna line is connected to the high-frequency generator, and the other side of the 2A antenna line The side is connected to the ground, and the inside of the 1A antenna line and the 2A antenna line are filled with the same metal material as the outside, so as not to form a hollow inside. The plasma processing apparatus including a plasma antenna according to claim 8, wherein one or more of the first plasma antenna and the second plasma antenna is a cross-sectional surface facing the chamber. A straight line extending in the vertical direction. The plasma processing apparatus including a plasma antenna according to claim 9, wherein the first formation area and the second formation area are cylindrical, and the diameter of the second formation area is larger than the diameter of the first formation area . The plasma processing apparatus including a plasma antenna according to claim 8, wherein the second plasma antenna includes: A 1B antenna line extending from one side to the other side to have a C shape; A 2B antenna line is located at a position spaced downward from the 1B antenna line and extends from one side to the other to have a C shape; and A second connecting shaft is connected between one side of the 1B antenna line and one side of the 2B antenna line. The plasma processing apparatus including a plasma antenna according to claim 11, wherein the first formation area is a cylindrical shape, and the second formation area gradually increases in diameter from the upper side to the lower side so that the lower side thereof It is formed larger than the diameter of the first forming area. The plasma processing apparatus including a plasma antenna according to claim 12, wherein the diameter of the 2B antenna line is larger than the diameter of the 1B antenna line, so as to correspond to the diameter of the second formation area gradually from the upper side to the lower side Increase. The plasma processing apparatus including a plasma antenna according to claim 12, wherein the diameter of the 1B antenna line is the same as the diameter of the 2B antenna line. The plasma processing apparatus including a plasma antenna according to claim 8, wherein the processing area includes: A first processing wall having a diameter larger than that of the second forming area, a hole connecting the processing area and the second forming area is formed in the center, and the first processing wall is combined with the lower side of the second forming area; and A second treatment wall defines the horizontal length of the treatment area. The plasma processing device including a plasma antenna according to claim 15, wherein the plasma processing device further includes: A first heater located above the first forming area; and A second heater is combined with the first processing wall to be located around the second forming area. The plasma processing apparatus including a plasma antenna according to claim 16, wherein the plasma processing apparatus further includes: A cooling part is combined with the first processing wall to be located around the second heater so as to reduce the temperature transferred from the second heater. The plasma processing apparatus including a plasma antenna according to claim 17, wherein, based on the second processing wall, the second heater is located inside, and the cooling part is located outside. The plasma processing apparatus including a plasma antenna according to claim 18, wherein the plasma processing apparatus further includes: A cover covering the forming area, the first heater and the second heater from the outside; and A fan is combined with the cover to circulate the surrounding air of the plasma antenna.

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