以下，參照圖式詳細說明實施方式。另外，以下的實施方式非限定申請專利範圍的發明者。於實施方式雖記載複數個特徵，惟不限於此等複數個特徵的全部為發明必須者，此外複數個特徵亦可任意進行組合。再者，圖式中，對相同或同樣的構成標注相同的參考符號，重複之說明省略。
圖1為就本發明的一方案方面的曝光裝置100的構成進行繪示的示意圖。曝光裝置100為使用於作為裝置的製程之光刻程序的光刻裝置，為處理基板4的在本實施方式具體實現為將圖案形成於基板4的基板處理裝置。
另外，本發明非將基板處理裝置限定於曝光裝置者，亦可適用於壓印裝置、描繪裝置。於此，壓印裝置使供應至基板上的壓印材與模具接觸，對壓印材提供硬化用的能量，從而形成被轉印有模具的圖案下的固化物的圖案。描繪裝置以帶電粒子束(電子束)、雷射束對基板進行描繪從而在基板上形成圖案(潛像圖案)。此外，本發明亦可適用於各種的精密加工裝置、各種的精密計測裝置等的處理基板的裝置。
曝光裝置100如示於圖1，具有將遮罩2進行照明的照明光學系統1、將遮罩2的圖案的像投影於基板4的投影光學系統3、將基板4保持而移動的基板載台5、和控制部17。
曝光裝置100採用步進掃描方式、步進重複方式。曝光裝置100將從i射線或KrF準分子雷射、ArF準分子雷射等的光源射出的光，經由照明光學系統1，照射於遮罩2。通過遮罩2的光被以投影光學系統3縮小而投影於基板4，遮罩2的圖案被轉印於基板4。在步進掃描方式，一面將遮罩2與基板4同步掃描一面將基板4曝光，在步進重複方式，使基板4靜止的狀態下將基板4曝光。
基板載台5包含馬達部6，為透過馬達部6動作(移動)的單元(驅動部)。基板載台5在本實施方式中在經由遮罩2將基板4曝光而將圖案形成於基板4的曝光處理中，高速重複移動(例如，步進移動)與靜止。由於如此的移動與靜止的重複，使得基板載台5，詳細而言使得馬達部6發熱，故需要抑制馬達部6的發熱而使基板載台5維持於目標溫度。
所以，曝光裝置100具有使用冷媒將馬達部6冷卻而將基板載台5的溫度進行調整(調溫)的調溫部10。調溫部10包含槽11、泵浦12、加熱器13、冷卻器14、感測器15及16。調溫部10在本實施方式構成使泵浦12為動力源而使冷媒循環的循環系統。調溫部10將以冷卻器14進行冷卻的冷媒存積於槽11，以槽11調和冷媒的溫度，以加熱器13將冷媒加熱而使以感測器15及16計測的溫度成為既定溫度，從而將基板載台5的溫度維持於目標溫度。
控制部17以包含CPU、記憶體等的電腦而構成，依記憶於記憶部的程式總體地控制曝光裝置100的各部分而使曝光裝置100動作。控制部17控制曝光處理、與曝光處理相關的處理。控制部17在本實施方式控制調溫部10而使基板載台5(馬達部6)的溫度成為目標溫度。如後述，控制部17作用為一設定部，該設定部根據為了控制基板載台5的動作用的資訊，在基板載台5的動作的開始前，對調溫部10設定為了使調溫部10調整基板載台5的溫度用的控制參數。
就在控制部17之基板載台5的溫度控制進行說明。控制部17一般而言將調溫部10進行回授控制而使以感測器15及16計測的溫度成為既定溫度Temp1。於此，既定溫度Temp1是為了使基板載台5的溫度成為目標溫度而對調溫部10設定的控制參數。因此，對既定溫度Temp1，設定在基板載台5為目標溫度時以感測器15及16計測的溫度。其中，以感測器15及16計測的溫度與基板載台5的溫度之間無差的情況下，亦可對既定溫度Temp1設定基板載台5的目標溫度。
另一方面，於曝光裝置100，近年來，需要處理量的進一步的提升。為此，發生因基板載台5的高速化(高加速度化、高速度化)而起的馬達部6的發熱量的增加、因曝光裝置100的軟體的最佳化所致的序列的空耗時間的削減而起的基板載台5的驅動頻度的增加。因此，基板載台5(馬達部6)的每單位時間的發熱量具有增加的傾向，故有可能馬達部6的發熱成為超過調溫部10的調溫性能的狀態。如此的狀態下被溫度控制的基板載台5(馬達部6)的溫度顯示如示於圖2的舉動，恐超過基板載台5的容許溫度閾值Temp2。為示出基板載台5的溫度變動的一例的圖，縱軸表示基板載台5的溫度，橫軸表示時間。
所以，在本實施方式，如示於圖3，在比基板載台5發熱之前的時點，亦即在基板載台5的動作的開始前，對調溫部10作為為了調整基板載台5的溫度用的控制參數，設定溫度Temp1’。具體而言，在基板載台5的動作的開始前，將對調溫部10設定的控制參數，從既定溫度Temp1(第1控制參數)變更為溫度Temp1’(第2控制參數)。另外，溫度Temp1’為與既定溫度Temp1不同的溫度，具體而言為比既定溫度Temp1低的溫度。藉此，如示於圖3，可縮小基板載台5(馬達部6)的溫度變動(擺幅)，可使基板載台5的溫度落入至容許溫度閾值Temp2的範圍內。圖3為就在本實施方式之基板載台5的溫度變動的一例進行繪示的圖，縱軸表示基板載台5的溫度，橫軸表示時間。
在曝光裝置100，就對調溫部10設定(變更)控制參數的時點，根據曝光裝置100的各序列資訊，具體而言根據為了就基板載台5的動作進行控制用的資訊加以決定。藉此，可在實際對基板載台5給予動作指令使得基板載台5發熱之前的時點，進行設定於調溫部10的控制參數的變更。因此，可減輕基板載台5的溫度變動，實現基板載台5的溫度控制的精度提升。
另外，在變更設定於調溫部10的控制參數之下序列結束，且基板載台5(馬達部6)的發熱停止時，有可能基板載台5的溫度過度降低。所以，在本實施方式，一旦序列結束，使設定於調溫部10的控制參數復原。具體而言，在基板載台5的動作的結束後，將對調溫部10設定的控制參數，從溫度Temp1’變更為既定溫度Temp1。另外，使對調溫部10設定的控制參數復原的時點方面，亦根據曝光裝置100的各序列資訊，具體而言根據為了就基板載台5的動作進行控制用的資訊加以決定。
參照圖4，具體說明曝光裝置100的動作。在此，作為曝光裝置100的動作，以將複數個基板4連續曝光的情況為例進行說明。
在S402，將基板4搬入至曝光裝置100。在S404，將搬入至曝光裝置100的基板4的溫度，調整為適於在曝光裝置100的處理之溫度。在S406，進行預對準。在預對準，以基板4的外形為基準而校正基板4的方向，將該基板4搬送至基板載台5(使基板4保持於基板載台5)。
在S408，判定基板載台5是否在動作(亦即，是否動作中)。基板載台5在動作中的情況下，轉移至S410。另一方面，基板載台5非在動作中的情況下，轉移至S422。
在S410，進行對焦計測。在對焦計測，在保持於基板載台5的基板上的各計測點就對焦(基板4的高度方向的位置)進行計測。在S412，進行對準計測。對準計測為就基板4的位置偏差進行計測的處理，例如包含就基板4與基板載台5之間的位置偏差進行計測的處理、就遮罩2與基板4之間的位置偏差進行計測的處理等。
在S414，進行曝光。在曝光，根據在S410的對焦計測的結果、在S412的對準計測的結果，在就遮罩2與基板4進行同步掃描之下，或者在使基板4靜止的狀態下將基板4曝光。
於曝光，基板載台5高速重複移動與靜止，馬達部6發熱，故如上述，一般而言將調溫部10進行回授控制，從而控制基板載台5的溫度。其中，在曝光開始後，亦即在基板載台5的動作的開始後變更設定於調溫部10的控制參數時，有時調溫部10的溫度控制的響應不及時，無法抑制基板載台5(馬達部6)的溫度上升。
所以，在本實施方式，如示於圖4，基板載台5的動作的開始前，具體而言在預對準(S406)與對焦計測(S410)之間的時點，在基板載台5非在動作中的情況下，進行S422。在S422，變更對調溫部10設定的控制參數。具體而言，如上述，將對調溫部10設定的控制參數，從既定溫度Temp1變更為溫度Temp1’。藉此，可對於基板載台5(馬達部6)的發熱預先使冷媒降低，可如示於圖3，減小基板載台5的溫度變動，使基板載台5的溫度落入容許溫度閾值Temp2的範圍內。
在S416，判定在S414進行曝光的基板4是否為最終基板。例如，1批次包含25個基板4的情況下，第25個基板為最終基板。在S414進行曝光的基板4非最終基板的情況下，轉移至S418。在S418，從曝光裝置100搬出基板4。另一方面，在S414進行曝光的基板4為最終基板的情況下，轉移至S424。最終基板的曝光結束時，基板載台5變不會發熱，故在S424，變更對調溫部10設定的控制參數(復原成原本的控制參數)。具體而言，如上述，將對調溫部10設定的控制參數，從溫度Temp1’變更為既定溫度Temp1。藉此，可防止基板載台5的溫度過度降低，將基板載台5的溫度維持於目標溫度。
在將複數個基板4連續曝光的情況下，示於圖4的序列被重複。此情況下，將顯示設定於調溫部10的控制參數在何時點被變更的時序圖示於圖5。參照圖5時，對搬入至曝光裝置100的第1個基板4，如上述，雖進行S402至S418、及S422的各程序，惟由於非最終基板，故S424的程序不進行。
接著，對搬入至曝光裝置100的第2個基板4，雖與第1個基板4同樣地進行各程序，惟第2個基板4的預對準(S406)時點是與第1個基板4的曝光(S414)時點重疊。因此，基板載台5在動作中，故S422的程序不進行。如此，在對於第2個基板4之處理，就在預對準(S406)時點基板載台5是否已在動作、及設定於調溫部10的控制參數是否已被變更進行確認。並且，僅在基板載台5未在動作且設定於調溫部10的控制參數未被變更的情況下，變更控制參數。此外，如同對於第1個基板4之處理，在對於第2個基板4之處理，由於非最終基板，故S424的程序不進行。直到對於第N個基板4之處理為止，為同樣的處理。
接著，對於被搬入至曝光裝置100的最終基板，雖與第1個基板4同樣地進行各程序，惟如同直到第N個基板4為止的處理，S422的程序不進行。其中，最終基板的曝光(S414)結束時，基板載台5變不會發熱，故進行S424的程序。
在本實施方式，雖設想在開始預對準的時點，具體而言在開始基板4的外形的計測的時點變更對調溫部10設定的控制參數，惟未限定於此。例如，可在基板4的外形的計測結束的時點、開始基板4的方向的校正的時點、或基板4的方向的校正結束的時點，變更對調溫部10設定的控制參數。
此外，在本實施方式，雖以在第1個基板4的預對準時點及最終基板的曝光時點變更對調溫部10設定的控制參數的情況為例進行說明，惟未限定於此。亦可考量曝光裝置100具有的調溫部10的調溫性能、響應性而在其他時點變更控制參數。
在本實施方式，雖在預對準時點變更對調溫部10設定的控制參數，惟亦可在之前的程序，亦即在搬入基板4的時點變更對調溫部10設定的控制參數。此情況下，例如可在將基板4交給基板手之時點、將基板4搬送至預對準位置的時點，變更對調溫部10設定的控制參數。
此外，在S404，如上述，將基板4的溫度調整為適於在曝光裝置100的處理之溫度(最佳溫度)。因此，之後的程序開始的時點依基板4的溫度相對於最佳溫度落入容許範圍的時點、基板4的溫度到達最佳溫度的時點而變動。所以，亦可在該時點變更對調溫部10設定的控制參數。
如此，可在基板載台5的動作的開始前時，變更對調溫部10設定的控制參數。具體而言，在基板4的搬入(S402)、溫度的調整(S404)、預對準(S406)、對焦計測(S408)、對準計測(S410)中的任一個時點，變更對調溫部10設定的控制參數即可。
另外，變更對調溫部10設定的控制參數的次數不限於1次，亦可為複數次。此情況下，可依各程序的結果，在預先決定的範圍內變更控制參數。
此外，應變更對調溫部10設定的控制參數的時點在控制部17中被根據為了控制基板載台5的動作用的資訊加以決定。於此，為了控制基板載台5的動作用的資訊包含例如基板4的佈局資訊、關於曝光條件之資訊及關於對準之資訊中至少一者。基板4的佈局資訊為顯示基板上的照射區域(處理對象區域)的排列之資訊。關於曝光條件的資訊為關於為了處理基板4用的處理條件的資訊，例如包含曝光量、曝光模式等。關於對準的資訊是為了對準基板4而計測的關於標記的資訊、顯示為了對準基板4而就標記進行計測的照射區域(樣品照射區域)的資訊。控制部17根據此等資訊生成基板載台5的動作的設定檔(所謂驅動設定資訊)，根據該驅動設定資訊，決定應變更對調溫部10設定的控制參數的時點。此情況下，可在使曝光裝置100動作前，事前決定應變更對調溫部10設定的控制參數的時點。
此外，為了控制基板載台5的動作用的資訊例如可為基板處理開始資訊、對準計測開始資訊、對準計測重試資訊及錯誤資訊中至少一者。基板處理開始資訊為指示基板4的曝光(處理)的開始的資訊，對準計測開始資訊為指示基板4的對準的開始的資訊。對準計測重試資訊為指示基板4的對準的重試的資訊，錯誤資訊顯示與基板4的曝光、對準(處理)相關的錯誤的資訊。控制部17根據此等資訊而決定應變更對調溫部10設定的控制參數的時點。此情況下，可一面使曝光裝置100動作，一面即時地決定應變更對調溫部10設定的控制參數的時點。
此外，為了控制基板載台5的動作用的資訊例如可為基板處理進行資訊及基板位置資訊中至少一者。基板處理進行資訊為顯示基板4的處理的進行狀況的資訊，及基板位置資訊為顯示在曝光裝置內的基板4的位置之資訊。控制部17根據此等資訊而決定應變更對調溫部10設定的控制參數的時點。此情況下，可依曝光裝置100的處理狀況，即時地決定應變更對調溫部10設定的控制參數的時點。
此外，在本實施方式，雖將為了使調溫部10調整基板載台5的溫度用的控制參數設為在基板載台5為目標溫度時以感測器15及16計測的溫度(基板載台5的目標溫度)，惟未限定於此。控制參數例如亦可是為了將透過調溫部10之基板載台5的溫度的調整進行ON／OFF用的參數、顯示判定基板載台5的溫度的異常之閾值的參數(亦即，容許溫度閾值Temp2)。
此外，在本實施方式，雖將伴隨為了處理基板4所為的動作而發熱的單元作為基板載台5而進行說明，惟未限定於此。伴隨為了處理基板4所為的動作而發熱的單元亦可為與基板載台5的動作連動而動作或溫度變動的單元，例如為將遮罩2保持而移動的遮罩台、減低曝光裝置100的振動的除振裝置。
此外，對調溫部10設定的控制參數的變更方面，在曝光裝置100發生異常的情況下的處理為重要。圖6為就在曝光裝置100發生異常的情況下的曝光裝置100的動作進行繪示的流程圖。在曝光裝置100，在裝置內外發生異常時，需要使其動作停止，或者進行為了從異常狀態恢復用的復原處理。因此，就在曝光裝置100的一般的動作進行變更的控制參數，在曝光裝置100發生異常之際，需要復原為變更前的控制參數。於曝光裝置100的動作，可能在其各程序發生異常。所以，如示於圖6，對各程序追加將對調溫部10設定的控制參數進行變更(復原)的程序。
此外，如示於圖6，在曝光裝置100從異常狀態恢復之際，依基板載台5的狀態，變更對調溫部10設定的控制參數。具體而言，確認基板載台5的溫度，依從既定溫度Temp1的背離，決定將對調溫部10設定的控制參數進行變更(復原)的時點。並且，於復原處理，在決定的時點，將對調溫部10設定的控制參數進行變更(復原)。
本發明的實施方式中的物品之製造方法例如適於製造裝置(半導體元件、磁記憶媒體、液晶顯示元件等)等的物品。如此之製造方法包含利用曝光裝置100將圖案形成於基板的程序、就形成有圖案的基板進行處理的程序、和從被處理的基板製造物品的程序。此外，如此之製造方法可包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕層剝離、切割、接合、封裝等)。本實施方式下的物品之製造方法比起歷來有利於物品的性能、品質、生產性及生產成本中的至少1者。
發明不限於上述實施方式，在不從發明的精神及範圍脫離之下，可進行各種的變更及變形。因此，撰寫申請專利範圍以公開發明的範圍。Hereinafter, embodiments will be described in detail with reference to the drawings. In addition, the following embodiments are not inventors who limit the scope of patent applications. Although a plurality of features are described in the embodiment, it is not limited to that all of the plurality of features are required for the invention, and a plurality of features can be combined arbitrarily. In addition, in the drawings, the same or the same components are denoted by the same reference symbols, and repeated descriptions are omitted.
FIG. 1 is a schematic diagram illustrating the structure of an exposure apparatus 100 according to an aspect of the present invention. The exposure apparatus 100 is a photolithography apparatus used in a photolithography process as a manufacturing process of the apparatus, and is a substrate processing apparatus that processes a substrate 4 in this embodiment and is specifically implemented as a substrate processing apparatus that forms a pattern on the substrate 4.
In addition, the present invention is not limited to a substrate processing apparatus to an exposure apparatus, but can also be applied to an imprint apparatus and a drawing apparatus. Here, the imprint device brings the imprint material supplied to the substrate into contact with the mold, and provides energy for hardening to the imprint material, thereby forming the pattern of the cured product under the pattern of the mold transferred. The drawing device draws the substrate with a charged particle beam (electron beam) or a laser beam to form a pattern (latent image pattern) on the substrate. In addition, the present invention can also be applied to devices for processing substrates such as various precision processing devices and various precision measurement devices.
The exposure apparatus 100, as shown in FIG. 1, has an illumination optical system 1 that illuminates the mask 2, a projection optical system 3 that projects an image of the pattern of the mask 2 on a substrate 4, and a substrate stage that moves while holding the substrate 4 5. And control part 17.
The exposure apparatus 100 adopts a step-and-scan method and a step-and-repeat method. The exposure device 100 irradiates the mask 2 with light emitted from a light source such as an i-ray, KrF excimer laser, ArF excimer laser, etc., through the illumination optical system 1. The light passing through the mask 2 is reduced by the projection optical system 3 and projected on the substrate 4, and the pattern of the mask 2 is transferred to the substrate 4. In the step-and-scan mode, the mask 2 and the substrate 4 are simultaneously scanned while the substrate 4 is exposed. In the step-and-repeat mode, the substrate 4 is exposed while the substrate 4 is stationary.
The substrate stage 5 includes a motor section 6 and is a unit (drive section) that operates (moves) through the motor section 6. In the present embodiment, the substrate stage 5 repeatedly moves (for example, stepped movement) and stands still at high speed during the exposure process of exposing the substrate 4 through the mask 2 to form a pattern on the substrate 4. Due to the repetition of such movement and stillness, the substrate stage 5, in detail, causes the motor section 6 to generate heat. Therefore, it is necessary to suppress the heat generation of the motor section 6 to maintain the substrate stage 5 at the target temperature.
Therefore, the exposure apparatus 100 has the temperature adjustment part 10 which cools the motor part 6 using a refrigerant|coolant, and adjusts the temperature of the substrate stage 5 (temperature adjustment). The temperature control unit 10 includes a tank 11, a pump 12, a heater 13, a cooler 14, and sensors 15 and 16. In the present embodiment, the temperature control unit 10 constitutes a circulation system that uses the pump 12 as a power source to circulate the refrigerant. The temperature adjustment unit 10 stores the refrigerant cooled by the cooler 14 in the tank 11, adjusts the temperature of the refrigerant with the tank 11, and heats the refrigerant with the heater 13 so that the temperature measured by the sensors 15 and 16 becomes a predetermined temperature. Thus, the temperature of the substrate stage 5 is maintained at the target temperature.
The control unit 17 is constituted by a computer including a CPU, a memory, etc., and controls each part of the exposure apparatus 100 as a whole according to a program stored in the memory unit to operate the exposure apparatus 100. The control unit 17 controls exposure processing and processing related to the exposure processing. In this embodiment, the control unit 17 controls the temperature adjustment unit 10 so that the temperature of the substrate stage 5 (motor unit 6) becomes the target temperature. As will be described later, the control unit 17 functions as a setting unit that, based on information for controlling the operation of the substrate stage 5, sets the temperature adjustment unit 10 to the temperature adjustment unit 10 before starting the operation of the substrate stage 5 Control parameters for adjusting the temperature of the substrate stage 5.
The temperature control of the substrate stage 5 in the control section 17 will be described. The control unit 17 generally performs feedback control on the temperature adjustment unit 10 so that the temperature measured by the sensors 15 and 16 becomes the predetermined temperature Temp1. Here, the predetermined temperature Temp1 is a control parameter set to the temperature adjustment unit 10 in order to make the temperature of the substrate stage 5 a target temperature. Therefore, for the predetermined temperature Temp1, the temperature measured by the sensors 15 and 16 when the substrate stage 5 is the target temperature is set. However, if there is no difference between the temperature measured by the sensors 15 and 16 and the temperature of the substrate stage 5, the target temperature of the substrate stage 5 may be set for the predetermined temperature Temp1.
On the other hand, in the exposure apparatus 100, in recent years, a further increase in throughput has been required. For this reason, the increase in the amount of heat generated by the motor part 6 due to the increase in the speed of the substrate stage 5 (high acceleration, high speed), and the sequence of idle time due to the optimization of the software of the exposure apparatus 100 occur The drive frequency of the substrate stage 5 has increased due to the reduction of Therefore, the heat generation amount per unit time of the substrate stage 5 (motor unit 6) tends to increase, so the heat generation of the motor unit 6 may exceed the temperature regulation performance of the temperature regulation unit 10. In such a state, the temperature of the substrate stage 5 (motor section 6) that is temperature-controlled is displayed as shown in FIG. 2 and may exceed the allowable temperature threshold Temp2 of the substrate stage 5. In order to show an example of the temperature fluctuation of the substrate stage 5, the vertical axis represents the temperature of the substrate stage 5, and the horizontal axis represents time.
Therefore, in the present embodiment, as shown in FIG. 3, at a time point before the substrate stage 5 generates heat, that is, before the operation of the substrate stage 5 starts, the temperature adjustment section 10 is used to adjust the temperature of the substrate stage 5. Use the control parameter, set the temperature Temp1'. Specifically, before starting the operation of the substrate stage 5, the control parameter set for the temperature adjustment unit 10 is changed from the predetermined temperature Temp1 (first control parameter) to the temperature Temp1' (second control parameter). In addition, the temperature Temp1' is a temperature different from the predetermined temperature Temp1, specifically, a temperature lower than the predetermined temperature Temp1. Thereby, as shown in FIG. 3, the temperature fluctuation (swing range) of the substrate stage 5 (motor section 6) can be reduced, and the temperature of the substrate stage 5 can be made to fall within the allowable temperature threshold Temp2. FIG. 3 is a diagram illustrating an example of the temperature fluctuation of the substrate stage 5 in this embodiment. The vertical axis represents the temperature of the substrate stage 5 and the horizontal axis represents time.
In the exposure apparatus 100, the timing of setting (changing) the control parameters for the temperature control unit 10 is determined based on each sequence information of the exposure apparatus 100, specifically based on information for controlling the operation of the substrate stage 5. Thereby, it is possible to change the control parameters set in the temperature control unit 10 at a point before the operation command is actually given to the substrate stage 5 to cause the substrate stage 5 to generate heat. Therefore, the temperature fluctuation of the substrate stage 5 can be reduced, and the accuracy of the temperature control of the substrate stage 5 can be improved.
In addition, when the sequence ends after changing the control parameters set in the temperature adjustment section 10 and the heat generation of the substrate stage 5 (motor section 6) stops, the temperature of the substrate stage 5 may be excessively lowered. Therefore, in this embodiment, once the sequence ends, the control parameters set in the temperature adjustment unit 10 are restored. Specifically, after the operation of the substrate stage 5 is completed, the control parameter set for the temperature adjustment unit 10 is changed from the temperature Temp1' to the predetermined temperature Temp1. In addition, the timing of restoring the control parameters set for the temperature control unit 10 is also determined based on each sequence information of the exposure apparatus 100, specifically based on information for controlling the operation of the substrate stage 5.
4, the operation of the exposure apparatus 100 will be described in detail. Here, as the operation of the exposure apparatus 100, a case where a plurality of substrates 4 are continuously exposed is described as an example.
In S402, the substrate 4 is carried into the exposure apparatus 100. In S404, the temperature of the substrate 4 carried in the exposure apparatus 100 is adjusted to a temperature suitable for processing in the exposure apparatus 100. In S406, pre-alignment is performed. In the pre-alignment, the direction of the substrate 4 is corrected based on the outer shape of the substrate 4, and the substrate 4 is transferred to the substrate stage 5 (the substrate 4 is held on the substrate stage 5).
In S408, it is determined whether the substrate stage 5 is operating (that is, whether it is operating). When the substrate stage 5 is in operation, the process proceeds to S410. On the other hand, when the substrate stage 5 is not in operation, the process proceeds to S422.
In S410, focus measurement is performed. In the focus measurement, focus (position in the height direction of the substrate 4) is measured at each measurement point on the substrate held by the substrate stage 5. In S412, alignment measurement is performed. Alignment measurement is a process of measuring the positional deviation of the substrate 4, and includes, for example, a process of measuring the positional deviation between the substrate 4 and the substrate stage 5, and a process of measuring the positional deviation between the mask 2 and the substrate 4. Processing etc.
In S414, exposure is performed. In the exposure, based on the result of the focus measurement in S410 and the result of the alignment measurement in S412, the substrate 4 is exposed while the mask 2 and the substrate 4 are scanned synchronously, or the substrate 4 is stationary.
During exposure, the substrate stage 5 repeatedly moves and stops at a high speed, and the motor section 6 generates heat. Therefore, as described above, the temperature adjustment section 10 is generally subjected to feedback control to control the temperature of the substrate stage 5. However, when the control parameters set in the temperature control section 10 are changed after the exposure starts, that is, after the operation of the substrate stage 5 starts, the temperature control of the temperature control section 10 may not respond in time, and the substrate stage may not be suppressed. The temperature of 5 (motor part 6) rises.
Therefore, in the present embodiment, as shown in FIG. 4, before the start of the operation of the substrate stage 5, specifically at the time between pre-alignment (S406) and focus measurement (S410), the substrate stage 5 is not In the case of operation, S422 is performed. In S422, the control parameter set to the temperature control unit 10 is changed. Specifically, as described above, the control parameter set for the temperature adjustment unit 10 is changed from the predetermined temperature Temp1 to the temperature Temp1'. Thereby, the refrigerant can be reduced in advance for the heat generation of the substrate stage 5 (motor part 6), and the temperature fluctuation of the substrate stage 5 can be reduced as shown in FIG. 3, so that the temperature of the substrate stage 5 falls within the allowable temperature threshold. Within the range of Temp2.
In S416, it is determined whether the substrate 4 exposed in S414 is the final substrate. For example, when one batch contains 25 substrates 4, the 25th substrate is the final substrate. If the substrate 4 exposed in S414 is not the final substrate, the process proceeds to S418. In S418, the substrate 4 is carried out from the exposure apparatus 100. On the other hand, when the substrate 4 exposed in S414 is the final substrate, the process proceeds to S424. When the final exposure of the substrate is completed, the substrate stage 5 does not generate heat. Therefore, in S424, the control parameters set for the temperature control unit 10 are changed (returned to the original control parameters). Specifically, as described above, the control parameter set for the temperature adjustment unit 10 is changed from the temperature Temp1' to the predetermined temperature Temp1. Thereby, it is possible to prevent the temperature of the substrate stage 5 from being excessively lowered, and to maintain the temperature of the substrate stage 5 at the target temperature.
In the case where a plurality of substrates 4 are continuously exposed, the sequence shown in FIG. 4 is repeated. In this case, a time chart showing when the control parameter set in the temperature adjustment unit 10 is changed is shown in FIG. 5. 5, for the first substrate 4 carried into the exposure apparatus 100, although the procedures of S402 to S418, and S422 are performed as described above, the procedure of S424 is not performed because it is not the final substrate.
Next, for the second substrate 4 carried into the exposure apparatus 100, the procedures are performed in the same manner as the first substrate 4, but the pre-alignment (S406) of the second substrate 4 is the same as that of the first substrate 4. The points overlap during exposure (S414). Therefore, the substrate stage 5 is in operation, so the procedure of S422 is not performed. In this way, in the processing of the second substrate 4, it is checked whether the substrate stage 5 is already operating at the time of pre-alignment (S406), and whether the control parameters set in the temperature control unit 10 have been changed. In addition, the control parameter is changed only when the substrate stage 5 is not operating and the control parameter set in the temperature control unit 10 has not been changed. In addition, like the processing for the first substrate 4, the processing for the second substrate 4 is not the final substrate, so the procedure of S424 is not performed. The same process is performed until the Nth substrate 4 is processed.
Next, for the final substrate carried in the exposure apparatus 100, the procedures are performed in the same manner as the first substrate 4, but the procedures of S422 are not performed as in the processing up to the N-th substrate 4. However, when the final exposure of the substrate (S414) ends, the substrate stage 5 does not generate heat, so the process of S424 is performed.
In the present embodiment, although it is assumed that the control parameter set to the temperature adjustment unit 10 is changed at the time when the pre-alignment is started, specifically at the time when the measurement of the outer shape of the substrate 4 is started, it is not limited to this. For example, the control parameters set to the temperature control unit 10 can be changed at the time when the measurement of the outer shape of the substrate 4 ends, the time when the correction of the direction of the substrate 4 starts, or the time when the correction of the direction of the substrate 4 ends.
In addition, in this embodiment, although the case where the control parameter set to the temperature adjustment part 10 is changed at the pre-alignment timing of the first substrate 4 and the final substrate exposure timing is described as an example, it is not limited to this. The temperature control performance and responsiveness of the temperature control unit 10 included in the exposure apparatus 100 may be considered, and the control parameters may be changed at other time points.
In the present embodiment, although the control parameters set for the temperature control unit 10 are changed at the time of pre-alignment, the control parameters set for the temperature control unit 10 may be changed in the previous procedure, that is, when the substrate 4 is loaded. In this case, for example, when the substrate 4 is handed over to the substrate hand, and when the substrate 4 is transported to the pre-alignment position, the control parameters set to the temperature control unit 10 can be changed.
In addition, in S404, as described above, the temperature of the substrate 4 is adjusted to a temperature suitable for processing in the exposure apparatus 100 (optimum temperature). Therefore, the time when the subsequent program starts varies depending on the time when the temperature of the substrate 4 falls within the allowable range with respect to the optimum temperature, and the time when the temperature of the substrate 4 reaches the optimum temperature. Therefore, the control parameter set to the temperature control unit 10 may be changed at this time.
In this way, it is possible to change the control parameters set to the temperature adjustment unit 10 before the start of the operation of the substrate stage 5. Specifically, at any one of the loading of the substrate 4 (S402), temperature adjustment (S404), pre-alignment (S406), focus measurement (S408), and alignment measurement (S410), the temperature adjustment unit 10 is changed. Just set the control parameters.
In addition, the number of times of changing the control parameter set to the temperature adjustment unit 10 is not limited to one time, and may be multiple times. In this case, the control parameters can be changed within a predetermined range based on the results of each program.
In addition, the timing at which the control parameter set to the temperature adjustment unit 10 should be changed is determined in the control unit 17 based on information for controlling the operation of the substrate stage 5. Here, the information for controlling the operation of the substrate stage 5 includes, for example, at least one of layout information of the substrate 4, information about exposure conditions, and information about alignment. The layout information of the substrate 4 is information showing the arrangement of the irradiation area (processing target area) on the substrate. The information about exposure conditions is information about processing conditions for processing the substrate 4, and includes, for example, exposure amount, exposure mode, and the like. The information about the alignment is information about the mark measured for aligning the substrate 4, and information showing the irradiation area (sample irradiation area) measured for the mark for aligning the substrate 4. The control unit 17 generates a profile of the operation of the substrate stage 5 (so-called drive setting information) based on this information, and based on the drive setting information, determines the timing at which the control parameter set to the temperature control unit 10 should be changed. In this case, before operating the exposure apparatus 100, the timing at which the control parameter set to the temperature adjustment unit 10 should be changed can be determined in advance.
In addition, the information for controlling the operation of the substrate stage 5 may be at least one of substrate processing start information, alignment measurement start information, alignment measurement retry information, and error information, for example. The substrate processing start information is information indicating the start of exposure (processing) of the substrate 4, and the alignment measurement start information is information indicating the start of alignment of the substrate 4. The alignment measurement retry information is information indicating the retry of the alignment of the substrate 4, and the error information shows information about errors related to the exposure and alignment (processing) of the substrate 4. The control unit 17 determines the timing at which the control parameter set to the temperature adjustment unit 10 should be changed based on this information. In this case, while operating the exposure apparatus 100, it is possible to determine the time point at which the control parameter set to the temperature adjustment unit 10 should be changed in real time.
In addition, the information for controlling the operation of the substrate stage 5 may be, for example, at least one of substrate processing progress information and substrate position information. The substrate processing progress information is information showing the progress status of the processing of the substrate 4, and the substrate position information is information showing the position of the substrate 4 in the exposure apparatus. The control unit 17 determines the timing at which the control parameter set to the temperature adjustment unit 10 should be changed based on this information. In this case, the timing at which the control parameter set to the temperature adjustment unit 10 should be changed can be determined in real time according to the processing conditions of the exposure apparatus 100.
In addition, in this embodiment, the control parameter for adjusting the temperature of the substrate stage 5 in order for the temperature control unit 10 to be the temperature measured by the sensors 15 and 16 when the substrate stage 5 is the target temperature (the substrate The target temperature of station 5), but it is not limited to this. The control parameter may be, for example, a parameter for ON/OFF adjustment of the temperature of the substrate stage 5 through the temperature control unit 10, or a parameter that displays a threshold value for judging an abnormality in the temperature of the substrate stage 5 (that is, the allowable temperature threshold). Temp2).
In addition, in this embodiment, although the unit which generates heat accompanying the operation|movement which processes the board|substrate 4 is demonstrated as the board|substrate stage 5, it is not limited to this. The unit that generates heat accompanying the operation of processing the substrate 4 may also be a unit that operates in conjunction with the operation of the substrate stage 5 or changes in temperature, for example, a mask stage that moves while holding the mask 2 or a lower exposure device 100 Vibration damping device.
In addition, in terms of changing the control parameters set in the temperature adjustment unit 10, processing when an abnormality occurs in the exposure apparatus 100 is important. FIG. 6 is a flow chart depicting the operation of the exposure apparatus 100 when the exposure apparatus 100 is abnormal. In the exposure apparatus 100, when an abnormality occurs inside or outside the apparatus, it is necessary to stop its operation or perform a restoration process for recovering from an abnormal state. Therefore, it is necessary to restore the control parameters that were changed during the general operation of the exposure apparatus 100 to the control parameters before the change when an abnormality occurs in the exposure apparatus 100. In the operation of the exposure apparatus 100, an abnormality may occur in each program. Therefore, as shown in FIG. 6, a program for changing (restoring) the control parameters set in the temperature control unit 10 is added to each program.
In addition, as shown in FIG. 6, when the exposure apparatus 100 recovers from an abnormal state, the control parameters set to the temperature adjustment section 10 are changed in accordance with the state of the substrate stage 5. Specifically, the temperature of the substrate stage 5 is confirmed, and the time point for changing (restoring) the control parameters set in the temperature adjustment unit 10 is determined according to the deviation of the predetermined temperature Temp1. In addition, in the restoration process, the control parameter set in the temperature adjustment unit 10 is changed (restored) at the time of determination.
The manufacturing method of the article in the embodiment of the present invention is suitable for articles such as manufacturing devices (semiconductor elements, magnetic memory media, liquid crystal display elements, etc.), for example. Such a manufacturing method includes a procedure of forming a pattern on a substrate by the exposure apparatus 100, a procedure of processing the patterned substrate, and a procedure of manufacturing an article from the substrate to be processed. In addition, such a manufacturing method may include other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, cutting, bonding, packaging, etc.). The manufacturing method of the article in this embodiment is advantageous to at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method.
The invention is not limited to the above-mentioned embodiment, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the patent application was drafted to disclose the scope of the invention.
