TW202040281A - Light source device for exposure, exposure device, and exposure method - Google Patents
Light source device for exposure, exposure device, and exposure method Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
- G02B27/141—Beam splitting or combining systems operating by reflection only using dichroic mirrors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
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Abstract
Description
本發明係關於一種曝光用之光源裝置、曝光裝置及曝光方法,更詳細而言,係關於一種將自LED(Light Emitting Diode,發光二極體)元件照射之光作為光源之曝光用之光源裝置、曝光裝置及曝光方法。The present invention relates to a light source device, exposure device, and exposure method for exposure, and more specifically, to a light source device for exposure that uses light irradiated from an LED (Light Emitting Diode) element as the light source , Exposure device and exposure method.
於平板顯示器、印刷基板及半導體元件等之微影術中所使用之曝光裝置中,先前使用水銀燈作為UV(Ultraviolet,紫外線)光源。然而,近年來,對水銀之使用之限制變得嚴格,正在推進UV光源之LED化。In exposure devices used in lithography of flat panel displays, printed substrates, and semiconductor devices, mercury lamps were previously used as UV (Ultraviolet) light sources. However, in recent years, restrictions on the use of mercury have become stricter, and LEDs for UV light sources are being promoted.
此處,於直接使用水銀燈與符合波長區域之先前之阻劑之情形時,單波長之LED元件與水銀燈相比波長頻帶較窄。因此,已知有將相當於在高壓水銀燈中之輸出較強之水銀燈之g射線(436 nm)、h射線(405 nm)、i射線(365 nm)之複數種波長之LED元件加以組合製成UV光源而成者(例如參照專利文獻1及2)。Here, when the mercury lamp and the previous resist in the wavelength range are used directly, the single-wavelength LED element has a narrower wavelength band than the mercury lamp. Therefore, it is known to combine LED elements with multiple wavelengths of g-ray (436 nm), h-ray (405 nm), and i-ray (365 nm), which are equivalent to mercury lamps with strong output in high-pressure mercury lamps. It is a UV light source (for example, refer to
專利文獻1中記載有一種光源裝置,其使用X字型之分色鏡,使來自照射相當於在高壓水銀燈中之輸出較強之g射線(436 nm)、h射線(405 nm)、i射線(365 nm)之波長之光之複數個LED元件的UV光合波。又,專利文獻2中記載有一種LED型紫外線照射器,其具備以360 nm~380 nm、390 nm~410 nm、420 nm~450 nm之波段分別發出UV光之複數個LED光源、及對於各LED光源配置之複數個分色鏡。進而,專利文獻2中記載有使用以未達300 nm之波長、例如名義上240 nm之波長發出之UV LED光。
先前技術文獻
專利文獻
專利文獻1:日本專利特開2018-10294號公報 專利文獻2:日本專利特開2010-263218號公報Patent Document 1: Japanese Patent Laid-Open No. 2018-10294 Patent Document 2: Japanese Patent Laid-Open No. 2010-263218
[發明所欲解決之問題][The problem to be solved by the invention]
然,關於UV光源之設定波長,於為高效率地使阻劑感光之波長時,LED光源之消耗電力較少,又,可減少由光源之發熱導致之冷卻之時間,故較佳。曝光裝置中,一般而言,為了減少零件數、有效利用裝置內之空間、及輕量化,有欲使UV光源小型化之要求。關於來自LED陣列之光,雖然各LED元件中帶有聚光透鏡,但若不另外使用尤其是凸透鏡等光學構件,則光有不平行而擴散之傾向。因此,縮短光程長度,使光源裝置小型化之必要性較高。尤其是面向顯示器之曝光裝置中,必須一次曝光較廣之面積,故光源尺寸亦變大,小型化之必要性較高。However, with regard to the set wavelength of the UV light source, when it is the wavelength that efficiently sensitizes the resist, the LED light source consumes less power and can reduce the cooling time caused by the heat of the light source, so it is better. Generally speaking, in the exposure apparatus, in order to reduce the number of parts, effectively use the space in the apparatus, and reduce the weight, there is a demand for miniaturization of the UV light source. Regarding the light from the LED array, although each LED element has a condenser lens, unless an optical member such as a convex lens is used separately, the light tends to be non-parallel and diffuse. Therefore, it is necessary to shorten the optical path length and miniaturize the light source device. Especially in the exposure device facing the display, a wider area must be exposed at one time, so the size of the light source also becomes larger, and the necessity of miniaturization is higher.
專利文獻1中記載之光源裝置使用X字型之分色鏡以圖減小設置面積,但仍有進一步小型化之餘地。又,專利文獻2中記載之LED型紫外線照射器串聯使用3個以上之分色鏡,作為小型化之LED光源,仍有進一步改善之餘地。The light source device described in
又,發明者使用先前之阻劑進行試驗,結果發現了於較i射線(365 nm)短之波長下之曝光感光度較高之阻劑。認為其原因在於:阻劑之聚合起始劑不僅對吸收峰波長有吸收,對周邊之波長亦有吸收,但若吸收之波長區域延伸至可見光區域,則存在因阻劑之用途而產生問題之情形,故特意將吸收峰波長設定為較水銀燈之g射線、h射線、i射線短之波長。作為此種用途,例如可列舉顯示器或影像感測器之彩色濾光片用之阻劑。因此,亦期待更高效率地使此種阻劑感光之光源裝置。In addition, the inventors used the previous resists to conduct experiments, and as a result, found a resist with higher exposure sensitivity at a shorter wavelength than i-ray (365 nm). It is believed that the reason is that the polymerization initiator of the resist not only absorbs the absorption peak wavelength, but also absorbs the surrounding wavelengths, but if the absorption wavelength region extends to the visible light region, there will be problems caused by the use of the resist In this case, the absorption peak wavelength is deliberately set to be shorter than the g-ray, h-ray, and i-ray of the mercury lamp. As such use, for example, a resist for color filters of displays or image sensors can be cited. Therefore, a light source device that sensitizes such resists more efficiently is also expected.
本發明係鑒於上述問題而完成者,其目的在於提供一種將具有不同峰值波長之複數種LED元件之光予以合成且以小型化構成之曝光用之光源裝置、使用該光源裝置之曝光裝置及曝光方法。 [解決問題之技術手段]The present invention was completed in view of the above problems, and its object is to provide a light source device for exposure that combines light from a plurality of LED elements with different peak wavelengths and is constructed in a compact size, an exposure device using the light source device, and exposure method. [Technical means to solve the problem]
本發明之上述目的藉由下述構成達成。 (1)一種曝光用之光源裝置,其具備: 第1LED陣列,其具有複數個發出第1峰值波長之光之第1LED元件; 第2LED陣列,其具有複數個發出與第1峰值波長不同之第2峰值波長之光之第2LED元件; 光合成元件,其將該第1及第2LED陣列之光予以合成;及 複眼透鏡,其供藉由上述光合成元件合成之光入射;且 上述光合成元件具備2片使特定波長頻帶之光透過且使其他波長頻帶之光反射之分色膜,該2片分色膜以相對於自上述光合成元件往向上述複眼透鏡之光軸方向傾斜,且於上述複眼透鏡側密接之方式呈大致V字形配置, 上述第1LED陣列配置於在上述光軸方向上相對於上述光合成元件而與上述複眼透鏡相反之側, 上述第2LED陣列以與上述光軸方向交叉之方式配置於上述光合成元件之側方。 (2)如(1)記載之曝光用之光源裝置,其中自上述第1LED元件與上述第2LED元件之任一者照射之光之峰值波長為360~380 nm, 自上述第1LED元件與上述第2LED元件之任意另一者照射之光之峰值波長為300~355 nm或385~410 nm, 上述第1LED元件與上述第2LED元件之各峰值波長相隔20 nm以上。 (3)如(1)或(2)記載之曝光用之光源裝置,其中配置於上述光合成元件之側方之上述第2LED陣列之長度較配置於相對於上述光合成元件而與上述複眼透鏡相反之側之上述第1LED陣列之長度短。 (4)如(1)至(3)中任一項記載之曝光用之光源裝置,其中上述光合成元件為2片分色鏡或分色稜鏡。 (5)如(1)記載之曝光用之光源裝置,其中上述光合成元件為2片分別具有上述分色膜之分色鏡, 上述各分色鏡之端部被切割成與上述光軸方向平行。 (6)如(5)記載之曝光用之光源裝置,其進而具備分別使上述分色鏡固定,且於上述2片分色鏡相互密接之側敞開之2個分色鏡固定框, 上述分色鏡固定框之上述複眼透鏡側之前端被切割成與上述光軸方向垂直。 (7)如(1)至(6)中任一項記載之曝光用之光源裝置,其中上述第2LED陣列具有於與上述光軸方向正交之平面上以90°間隔交替配置之2種之2個第2LED陣列。 (8)一種曝光裝置,其具備:照明裝置,其具有如(1)至(7)中任一項記載之曝光用之光源裝置; 工件支持部,其支持工件;及 遮罩支持部,其支持遮罩;且 將自上述照明裝置照射之光經由上述遮罩照射至上述工件而將上述遮罩之圖案轉印至上述工件上。 (9)一種曝光方法,其係使用如(8)記載之曝光裝置,將自上述照明裝置照射之光經由上述遮罩照射至上述工件而將上述遮罩之圖案轉印至上述工件上。 (10)一種曝光用之光源裝置,其具備: 與設置於基板之感光材料之聚合起始劑之感光波長相對應,於360~380 nm之範圍發出第1峰值波長之光之複數個第1LED元件;及於300~355 nm之範圍發出第2峰值波長之光之複數個第2LED元件;且 使上述第1LED元件之光與上述第2LED元件之光混合並出射至複眼透鏡。 (11)如(10)記載之曝光用之光源裝置,其具備以混合存在之方式配置有上述第1LED元件及上述第2LED元件之LED陣列。 (12)如(9)記載之曝光用之光源裝置,其具備: 第1LED陣列,其具有上述複數個第1LED元件; 第2LED陣列,其具有上述複數個第2LED元件;及 光合成元件,其將該第1及第2LED陣列之光予以合成;且 上述光合成元件以相對於自上述光合成元件往向上述複眼透鏡之光軸方向傾斜之方式配置使特定波長頻帶之光透過且使其他波長頻帶之光反射之分色膜, 上述第1LED陣列與上述第2LED陣列之任一者配置於在上述光軸方向上相對於上述光合成元件而與上述複眼透鏡相反之側, 上述第1LED陣列與上述第2LED陣列之任意另一者以與上述光軸方向交叉之方式配置於上述光合成元件之側方。 (13)一種曝光裝置,其具備:照明裝置,其具有如(10)至(12)中任一項記載之曝光用之光源裝置; 工件支持部,其支持工件;及 遮罩支持部,其支持遮罩;且 將自上述照明裝置照射之光經由上述遮罩照射至上述工件而將上述遮罩之圖案轉印至上述工件上。 (14)一種曝光方法,其係使用如(13)記載之曝光裝置,將自上述照明裝置照射之光經由上述遮罩照射至上述工件而將上述遮罩之圖案轉印至上述工件上。 [發明之效果]The above object of the present invention is achieved by the following configuration. (1) A light source device for exposure, which includes: The first LED array has a plurality of first LED elements emitting light of the first peak wavelength; The second LED array has a plurality of second LED elements that emit light with a second peak wavelength different from the first peak wavelength; A light synthesis element that synthesizes the light of the first and second LED arrays; and A fly-eye lens for incident light synthesized by the above-mentioned light synthesis element; and The light synthesizing element includes two dichroic films that transmit light in a specific wavelength band and reflect light in other wavelength bands, and the two dichroic films are inclined with respect to the optical axis direction from the light synthesizing element to the fly-eye lens, And the close contact on the fly eye lens side is roughly V-shaped, The first LED array is arranged on the side opposite to the fly-eye lens with respect to the light combining element in the optical axis direction, The second LED array is arranged on the side of the light combining element so as to cross the optical axis direction. (2) The light source device for exposure as described in (1), wherein the peak wavelength of light irradiated from either the first LED element and the second LED element is 360-380 nm, The peak wavelength of the light irradiated from the other of the first LED element and the second LED element is 300-355 nm or 385-410 nm, The peak wavelengths of the first LED element and the second LED element are separated by 20 nm or more. (3) The light source device for exposure as described in (1) or (2), wherein the length of the second LED array arranged on the side of the light combining element is longer than that of the light combining element and opposite to the fly-eye lens. The length of the first LED array on the side is short. (4) The light source device for exposure according to any one of (1) to (3), wherein the light combining element is a two-piece dichroic mirror or a dichroic mirror. (5) The light source device for exposure as described in (1), wherein the light combining element is two dichroic mirrors each having the dichroic film, The end of each dichroic mirror is cut to be parallel to the optical axis direction. (6) The light source device for exposure as described in (5), further comprising two dichroic mirror fixing frames for fixing the dichroic mirrors respectively and opening at the sides where the two dichroic mirrors are in close contact with each other, The front end on the fly-eye lens side of the dichroic mirror fixing frame is cut to be perpendicular to the optical axis direction. (7) The light source device for exposure according to any one of (1) to (6), wherein the second LED array has two types of LEDs arranged alternately at 90° intervals on a plane orthogonal to the optical axis direction. 2 second LED arrays. (8) An exposure device including: an illumination device having the light source device for exposure as described in any one of (1) to (7); Workpiece support department, which supports the work piece; and The mask support part, which supports the mask; and The light irradiated from the lighting device is irradiated to the workpiece through the mask to transfer the pattern of the mask to the workpiece. (9) An exposure method that uses the exposure device described in (8) to irradiate the light irradiated from the illumination device to the workpiece through the mask to transfer the pattern of the mask to the workpiece. (10) A light source device for exposure, including: Corresponding to the photosensitive wavelength of the polymerization initiator of the photosensitive material provided on the substrate, a plurality of first LED elements emitting light of the first peak wavelength in the range of 360-380 nm; and emitting second LED elements in the range of 300-355 nm A plurality of second LED elements of light of peak wavelength; and The light of the first LED element and the light of the second LED element are mixed and emitted to the fly-eye lens. (11) The light source device for exposure according to (10), which includes an LED array in which the first LED element and the second LED element are arranged in a mixed manner. (12) The light source device for exposure as described in (9), which has: A first LED array having the above-mentioned plural first LED elements; A second LED array having the above-mentioned plurality of second LED elements; and A light synthesis element which synthesizes the light of the first and second LED arrays; and The light synthesizing element is arranged with a dichroic film that transmits light in a specific wavelength band and reflects light in other wavelength bands so as to be inclined with respect to the optical axis direction of the fly-eye lens from the light synthesizing element, Either the first LED array and the second LED array are arranged on the side opposite to the fly-eye lens with respect to the light combining element in the optical axis direction, The other of the said 1st LED array and the said 2nd LED array is arrange|positioned at the side of the said light combining element so that it may cross with the said optical axis direction. (13) An exposure device including: an illumination device having the light source device for exposure as described in any one of (10) to (12); Workpiece support department, which supports the work piece; and The mask support part, which supports the mask; and The light irradiated from the lighting device is irradiated to the workpiece through the mask to transfer the pattern of the mask to the workpiece. (14) An exposure method that uses the exposure device described in (13) to irradiate light irradiated from the illumination device to the workpiece through the mask to transfer a pattern of the mask to the workpiece. [Effects of Invention]
根據本發明之曝光用之光源裝置、使用該光源裝置之曝光裝置及曝光方法,能夠以小型化構成可將峰值波長不同之來自複數個LED元件之光予以合成之光源裝置,並且,能夠利用該合成光高效率地使感光材料感光,從而提昇曝光作業效率。According to the light source device for exposure, the exposure device and the exposure method using the light source device of the present invention, a light source device capable of combining light from a plurality of LED elements with different peak wavelengths can be constructed in a compact structure, and can be utilized The synthetic light efficiently sensitizes the photosensitive material, thereby improving the efficiency of exposure work.
(第1實施形態)
以下,基於圖式詳細地對本發明之曝光裝置之第1實施形態進行說明。如圖1所示,近接曝光裝置PE使用較作為被曝光材之工件W小之遮罩M,將遮罩M保持於遮罩載置台(遮罩支持部)1上,並且將工件W保持於工件載置台(工件支持部)2上,於使遮罩M與工件W接近並以特定之曝光間隙對向配置之狀態下,自照明裝置3向遮罩M照射圖案曝光用之光,藉此,將遮罩M之圖案曝光轉印至工件W上。又,使工件載置台2相對於遮罩M於X軸方向與Y軸方向兩軸方向上步進移動,每一次步進均進行曝光轉印。(First Embodiment)
Hereinafter, the first embodiment of the exposure apparatus of the present invention will be described in detail based on the drawings. As shown in Fig. 1, the proximity exposure device PE uses a mask M smaller than the workpiece W as the material to be exposed, holds the mask M on the mask mounting table (mask support portion) 1, and holds the workpiece W on On the workpiece mounting table (work support portion) 2, in a state where the mask M and the workpiece W are close to each other and are arranged opposite to each other with a specific exposure gap, the light for pattern exposure is irradiated from the
為了使工件載置台2於X軸方向上步進移動,於裝置基底4上設置有使X軸進給台5a於X軸方向上步進移動之X軸載置台進給機構5。為了使工件載置台2於Y軸方向上步進移動,於X軸載置台進給機構5之X軸進給台5a上設置有使Y軸進給台6a於Y軸方向上步進移動之Y軸載置台進給機構6。Y軸載置台進給機構6之Y軸進給台6a上設置有工件載置台2。工件W以被工件吸盤等真空吸引之狀態保持於工件載置台2之上表面。又,於工件載置台2之側部配設有用以測定遮罩M之下表面高度之基板側位移感測器15。因此,基板側位移感測器15可與工件載置台2一同於X、Y軸方向上移動。In order to move the
於裝置基底4上沿X軸方向配置有複數條(於圖示之實施形態中為4條)X軸線性引導之導軌51,於各導軌51上跨架有固定於X軸進給台5a之下表面之滑塊52。藉此,X軸進給台5a利用X軸載置台進給機構5之第1線性馬達20得以驅動,可沿導軌51於X軸方向上往復移動。又,於X軸進給台5a上沿Y軸方向配置有複數條Y軸線性引導之導軌53,於各導軌53上跨架有固定於Y軸進給台6a之下表面之滑塊54。藉此,Y軸進給台6a利用Y軸載置台進給機構6之第2線性馬達21得以驅動,可沿導軌53於Y軸方向上往復移動。A plurality of X-axis linear guide rails 51 (four in the embodiment shown) are arranged along the X-axis direction on the
為了使工件載置台2於上下方向上移動,於Y軸載置台進給機構6與工件載置台2之間設置有:上下粗動裝置7,其定位解析度相對較低,但移動行程及移動速度較大;及上下微動裝置8,其與上下粗動裝置7相比,能夠以高解析度進行定位,使工件載置台上下微動而將遮罩M與工件W之對向面間之間隙微調整為特定量。In order to move the workpiece placing table 2 in the vertical direction, between the Y-axis placing
上下粗動裝置7藉由設置於下述微動載置台6b之適當之驅動機構使工件載置台2相對於微動載置台6b上下移動。固定於工件載置台2之底面之4個部位之載置台粗動軸14卡合於固定於微動載置台6b之線性運動軸承14a,相對於微動載置台6b於上下方向上被導引。再者,關於上下粗動裝置7,較理想為雖然解析度低,但反覆定位精度高。The vertical
上下微動裝置8具備固定於Y軸進給台6a之固定台9、及以使其內端側向斜下方傾斜之狀態安裝於固定台9之線性引導之導軌10,經由跨架於該導軌10之滑塊11沿導軌10往復移動之滑體12與滾珠螺桿之螺帽(未圖示)連結,並且,滑體12之上端面以於水平方向上自由滑動之方式與固定於微動載置台6b之凸緣12a相接。The vertical
如此,若藉由安裝於固定台9之馬達17使滾珠螺桿之螺桿旋轉驅動,則螺帽、滑塊11及滑體12一體沿導軌10於斜方向上移動,藉此,凸緣12a上下微動。
再者,上下微動裝置8亦可藉由線性馬達驅動滑體12以代替藉由馬達17與滾珠螺桿驅動滑體12。In this way, if the screw of the ball screw is driven to rotate by the
於Z軸進給台6a之Y軸方向之一端側(圖1之左端側)設置有1台該上下微動裝置8,於另一端側設置有2台,共計設置有3台,各上下微動裝置8被獨立地驅動控制。藉此,上下微動裝置8基於利用間隙感測器27所獲得之複數個部位之遮罩M與工件W之間隙量之測量結果,獨立地微調整3個部位之凸緣12a之高度,從而微調整工件載置台2之高度及斜度。
再者,於可藉由上下微動裝置8充分地調整工件載置台2之高度之情形時,亦可省略上下粗動裝置7。One of the upper and lower
又,於Y軸進給台6a上設置有與檢測工件載置台2之Y方向之位置之Y軸雷射干涉儀18對向之棒式反射鏡19、及與檢測工件載置台2之X軸方向之位置之X軸雷射干涉儀對向之棒式反射鏡(均未圖示)。與Y軸雷射干涉儀18對向之棒式反射鏡19於Y軸進給台6a之一側沿X軸方向配置,與X軸雷射干涉儀對向之棒式反射鏡於Y軸進給台6a之另一端側沿Y軸方向配置。In addition, the Y-axis feed table 6a is provided with a
Y軸雷射干涉儀18及X軸雷射干涉儀以與各自經常對應之棒式反射鏡對向之方式配置,並由裝置基底4支持。再者,於X軸方向上相隔設置有2台Y軸雷射干涉儀18。藉由2台Y軸雷射干涉儀18,經由棒式反射鏡19檢測出Y軸進給台6a、甚至是工件載置台2之Y軸方向之位置及偏搖誤差。又,藉由X軸雷射干涉儀,經由對向之棒式反射鏡檢測出X軸進給台5a、甚至是工件載置台2之X軸方向之位置。The Y-
遮罩載置台1具備:遮罩基框24,其包括大致長方形之框體;及遮罩框架25,其於該遮罩基框24之中央部開口處經由間隙被插入並以可於X、Y、θ方向(X、Y平面內)上移動之方式被支持;遮罩基框24藉由自裝置基底4突出設置之支柱4a被保持於工件載置台2之上方之起始位置。The mask mounting table 1 includes: a
於遮罩框架25之中央部開口之下表面設置有框狀之遮罩固持器26。即,於遮罩框架25之下表面設置有與未圖示之真空式吸附裝置連接之複數個遮罩固持器吸附槽,遮罩固持器26經由複數個遮罩固持器吸附槽吸附保持於遮罩框架25。A frame-shaped
於遮罩固持器26之下表面開設有用以吸附遮罩M之未繪製遮罩圖案之周緣部之複數個遮罩吸附槽(未圖示),遮罩M經由遮罩吸附槽並藉由未圖示之真空式吸附裝置以自由裝卸之方式保持於遮罩固持器26之下表面。A plurality of mask suction grooves (not shown) are provided on the lower surface of the
如圖2所示,本實施形態之曝光裝置PE之照明裝置3具備:用以照射紫外線之光源裝置70、用以改變自光源裝置70之複眼透鏡65出射之光路EL之方向的平面鏡66、使來自光源裝置70之光以平行光照射之準直鏡67、及使該平行光朝遮罩M照射之平面鏡68。As shown in FIG. 2, the
照明裝置3中,自光源裝置70照射之光入射至複眼透鏡65之入射面。複眼透鏡65用以使入射之光於照射面上之照度分佈儘可能均勻。並且,自複眼透鏡65之出射面發出之光藉由平面鏡66、準直鏡67及平面鏡68而其行進方向改變,並且轉換為平行光。並且,該平行光以相對於保持於遮罩載置台1之遮罩M、進而相對於保持於工件載置台2之工件W之表面大致垂直之方式作為圖案曝光用之光進行照射,將遮罩M之圖案曝光轉印至工件W上。In the
其次,參照圖3對光源裝置70進行詳細敍述。本實施形態之光源裝置70具備:照射峰值波長互不相同之光之第1及第2LED陣列71、75、作為將自該第1及第2LED陣列71、75照射之峰值波長不同之光予以合成之光合成元件的分色鏡80(80A、80B)、及具備以矩陣狀排列之複數個透鏡元件65a之複眼透鏡65。Next, the
第1LED陣列71中,複數個第1LED元件72二維地對齊配置。複數個第1LED元件72例如照射於360~380 nm之任一波長處具有峰值波長(第1峰值波長)之UV光。再者,第1LED元件72之峰值波長較佳為360~370 nm,更佳為365 nm。In the
第2LED陣列75中,複數個第2LED元件76二維地對齊配置。複數個第2LED元件76例如照射於300~355 nm或385~410 nm之任一波長處具有峰值波長(第2峰值波長)之UV光。再者,第2LED元件76之峰值波長較佳為300~355 nm,更佳為325~355 nm,進而較佳為335 nm。In the
再者,第1LED元件72與第2LED元件76係以各自之光之峰值波長間隔20 nm以上之方式選定。使第1及第2LED元件72、76之光之峰值波長間隔20 nm以上之原因在於:分色鏡80就其性能方面而言,進行合成之2種波長必須間隔20 nm以上。In addition, the
再者,於第1LED元件72之峰值波長設定為例如365 nm之情形時,第2LED元件76之峰值波長可設定為345 nm以下,或者,亦可設定為385 nm以上。Furthermore, when the peak wavelength of the
作為光合成元件之分色鏡80為如下光學元件:於玻璃或塑膠等板狀之透明介質82上形成介電體之多層膜等薄膜(分色膜)81,具有使特定波長頻帶之光反射且使此外之波長頻帶之光透過之特性。
分色鏡80中,大致相等之長度L3之2片分色鏡80A、80B(2片分色膜81)以相對於自分色鏡80往向複眼透鏡65之光軸方向L(即沿光路EL之方向)傾斜,且於複眼透鏡側密接之方式呈大致V字形配置。再者,本實施形態中,2片分色鏡80A、80B以大致90°之角度被組合。The
並且,以與V字形之2片分色鏡80A、80B之開口側(為於光軸方向L上相對於分色鏡80而與複眼透鏡65相反之側,於圖3中為左側)對向之方式配置有第1LED陣列71。又,以與光軸方向L交叉(本實施形態中為正交)之方式,於V字形之2片分色鏡80A、80B之兩側方(於圖3中為上下)分別配置有第2LED陣列75。藉此,第1LED陣列71及第2LED陣列75均以大致45°之角度與V字形之分色鏡80A或80B對向。
再者,於本實施形態中,所謂第2LED陣列75與光軸方向L正交,不僅包括嚴格地正交之情形,亦包括以入射至複眼透鏡65之來自第2LED陣列75之光之方向性所容許之程度正交之情形。And, it is opposed to the opening side of the two
再者,第2LED陣列75之第2LED元件76之個數為第1LED陣列71之第1LED元件72之個數之1/2。即,第2LED陣列75之長度L2為第1LED陣列71之長度L1之大致1/2之長度,為分色鏡80A、或80B之長度L3之1/√2。藉此,自第1LED陣列71照射之所有光透過分色鏡80A或80B,並且,自2個第2LED陣列75照射之所有光被分色鏡80A或80B反射,自第1LED陣列71照射之光與自第2LED陣列75照射之光被合成並入射至複眼透鏡65之入射面。Furthermore, the number of the
如此,將2片分色鏡80A、80B以於複眼透鏡65側密接之方式呈大致V字形配置,將第1LED陣列71配置於在光軸方向L上相對於V字形之分色鏡80A、80B而與複眼透鏡65相反之側,將第2LED陣列75以與光軸方向L正交之方式分割配置於V字形之分色鏡80A、80B之兩側方,藉此,可縮短第1LED陣列71至複眼透鏡65之長度,能夠以小型化構成光源裝置70。又,藉由使第1LED陣列71與複眼透鏡65近接配置,而光學效率提昇。In this way, the two
再者,於圖3中,將第1LED陣列71設為於360~380 nm之任一波長處具有峰值波長之主波長,將第2LED陣列75設為例如於300~355 nm或385~410 nm之任一波長處具有峰值波長之副波長。然而,本實施形態中並不限定於此,亦可將第1LED陣列71設為例如於300~355 nm或385~410 nm之任一波長處具有峰值波長之副波長,將第2LED陣列75設為於360~380 nm之任一波長處具有峰值波長之主波長。Furthermore, in FIG. 3, the
又,由於利用分色鏡80A、80B所得之反射光與透過光相比,光學效率更高,故而可根據所使用之阻劑之感光感度適當地進行選擇。又,第1LED陣列71、第2LED陣列75及分色鏡80A、80B之長度亦可配合規格而改變。Moreover, since the reflected light obtained by the
第2LED陣列75於反射時通過分色鏡80之界面1次,相對於此,第1LED陣列71通過分色鏡80之界面2次。又,第2LED陣列75之光藉由分色鏡80被反射,由於分色鏡80之膜厚與反射波長成正比,故被反射之光之波長較短時,可將膜厚設為較薄,而製造變得容易。因此,於使用分色鏡80之情形時,較佳為對第1LED陣列71使用峰值波長相對較長者,對第2LED陣列75使用峰值波長相對較短者。While the
具體而言,作為第1LED陣列71之峰值波長與第2LED陣列75之峰值波長之較佳之組合,可列舉以下2種組合(A)、(B)。
(A)第1LED陣列71之峰值波長:360~380 nm
第2LED陣列75之峰值波長:300~355 nm
(B)第1LED陣列71之峰值波長:385~410 nm
第2LED陣列75之峰值波長:360~380 nmSpecifically, as a preferable combination of the peak wavelength of the
又,一般而言,藉由試驗確認使用具有各峰值波長之LED元件對吸收峰波長區域符合i射線(365 nm)之彩色光阻進行曝光之情形時之曝光感光度,結果獲得如表1所示之感度差。再者,表1係以365 nm為基準。In addition, generally speaking, the exposure sensitivity when using LED elements with various peak wavelengths to expose a color photoresist whose absorption peak wavelength region corresponds to i-rays (365 nm) is confirmed by experiments, and the results are as shown in Table 1. Show that the sensitivity is poor. Furthermore, Table 1 is based on 365 nm.
[表1]
據表1可知,例如,330 nm之波長之光之曝光感光度為365 nm之波長之光之3倍,因此,即使365 nm之LED元件之輸出為30%左右,亦可獲得同等之性能。因此,藉由根據阻劑之吸收峰波長區域將2種LED元件加以組合,可縮短曝光時間,由此可實現曝光步驟之高效率化。According to Table 1, for example, the exposure sensitivity of light with a wavelength of 330 nm is 3 times that of light with a wavelength of 365 nm. Therefore, even if the output of the 365 nm LED element is about 30%, the same performance can be obtained. Therefore, by combining two kinds of LED elements according to the absorption peak wavelength region of the resist, the exposure time can be shortened, and thus the efficiency of the exposure step can be improved.
作為一例,於將第2LED元件76設為主波長之365 nm,將第1LED元件72設為副波長之385 nm之情形時,長波長區域(385 nm)之LED元件與365 nm之LED元件相比,雖然曝光感光度低,但輸出高,又,波長較長時,透過率較高。具體而言,如圖4所示,配置於第1LED陣列71之385 nm之LED元件之透過率約為98%,如圖5所示,配置於第2LED陣列75之365 nm之LED元件之反射率約為100%,整體約存在2%之損耗。再者,圖4係表示作為一例之分色鏡80之透過率之曲線圖,圖5係表示圖4之分色鏡80之反射率之曲線圖。自各LED元件72、76出射之光藉由聚光透鏡以相對於分色鏡80A、80B之表面實質上為42°~48°之角度θ1、θ2(參照圖3)之範圍入射至分色鏡80A、80B,各曲線圖表示θ1、θ2=42°、45°、48°時之透過率、反射率。As an example, when the
如此,藉由將上述2種LED元件加以組合,可縮短曝光時間。再者,作為2種LED元件之組合,亦可使用峰值波長為365 nm者及330 nm者,能夠在輸出相同之情況下縮短曝光時間。In this way, by combining the above two types of LED elements, the exposure time can be shortened. Furthermore, as a combination of two types of LED elements, one with a peak wavelength of 365 nm and 330 nm can also be used, which can shorten the exposure time with the same output.
進而,藉由將成為主波長之LED元件與具有長於主波長之波長之LED元件加以組合,可謀求所形成之圖案之穩定化。 例如,於僅使用峰值波長為365 nm之單波長之LED元件進行曝光之情形時,由阻劑形成之圖案之硬化較弱,於顯影步驟中容易產生圖案之剝離。剝離容易於圖案之端部產生,源於通過遮罩之圖案之漏光及阻劑之聚合起始劑。通常,為了抑制剝離,必須增加曝光時間或調整前後步驟,藉由如本例般組合使用輸出較高,又,與波長較長相應地對阻劑之透過率較高,光容易到達阻劑深部之具有385 nm之波長之LED元件,可謀求圖案之穩定化。Furthermore, by combining the LED element that becomes the dominant wavelength and the LED element having a wavelength longer than the dominant wavelength, the formed pattern can be stabilized. For example, when only a single-wavelength LED element with a peak wavelength of 365 nm is used for exposure, the pattern formed by the resist is weakly hardened, and the pattern is easily peeled off during the development step. Peeling easily occurs at the end of the pattern, which originates from the light leakage of the pattern passing through the mask and the polymerization initiator of the resist. Generally, in order to suppress peeling, it is necessary to increase the exposure time or adjust the steps before and after. By using the combination as in this example, the output is higher, and the transmittance of the resist is higher corresponding to the longer wavelength, and the light easily reaches the deep part of the resist The LED element with a wavelength of 385 nm can stabilize the pattern.
(第2實施形態)
其次,參照圖6對第2實施形態之光源裝置70進行說明。如圖6所示,本實施形態之光源裝置70中,2片分色鏡80A、80B之兩端部83被切割成與自分色鏡80往向複眼透鏡65之光軸方向L平行。藉此,2片分色鏡80A、80B彼此之分色膜81於V字形之頂部相接,因此,分色鏡80A、80B可使自第1LED陣列71照射之光遍及分色鏡80之寬度方向(與光軸方向L正交之方向)全域地均勻透過,並且可使自第2LED陣列75照射之光以較廣之範圍反射,從而效率提昇。
再者,於該情形時,第1LED陣列71與第2LED陣列75亦可調換相對於2片分色鏡80A、80B之位置而配置。
關於其他構成及作用,與本發明之第1實施形態者相同。(Second Embodiment)
Next, the
(第3實施形態)
其次,參照圖7對第3實施形態之光源裝置70進行說明。如圖7所示,本實施形態使用2個分色鏡固定框85,對上述實施形態中所說明之2片分色鏡80A、80B之固定方法進行說明。(Third Embodiment)
Next, the
分色鏡固定框85具有如下形狀:覆蓋矩形之分色鏡80A、80B之四邊中之三邊之3條框體85a、85b、85c被組合為大致コ字形,而使分色鏡80A、80B相互對向之側之側面敞開。並且,分色鏡80A及80B之一側面嵌合於形成於大致コ字形之分色鏡固定框85之框體85a之槽86,分色鏡80A及80B之上表面介隔緩衝材88藉由設置於框體85c之按壓螺絲87被向框體85b按壓,從而固定於分色鏡固定框85。The dichroic
又,於圖7中,與第2實施形態相對應,以V字形對接之2片分色鏡80A、80B之前端部83、及分別使分色鏡80A、80B固定之分色鏡固定框85(框85b、85c)之前端部85d被切割成與自分色鏡80往向複眼透鏡65之光軸方向L平行,以無間隙之方式密接,較佳為以無間隙之方式接著。In addition, in FIG. 7, corresponding to the second embodiment, two
進而,以V字形被組合之分色鏡固定框85(框85b、85c)之複眼透鏡側之前端部85d被切割成與自分色鏡80往向複眼透鏡65之光軸方向L垂直,形成相互為同一平面之平面。藉此,可以分色鏡固定框85被切除之長度使2片分色鏡80A、80B進一步靠近複眼透鏡65,從而效率提昇,並且可使光源裝置70小型化。再者,支持分色鏡80A、80B之分色鏡固定框85(框體85a、85b、85c)之圖7(b)中,箭頭之外側之範圍配置於曝光之光之光路之外側,分色鏡固定框85不會成為曝光之障礙。Furthermore, the
又,作為本實施形態之變化例,如圖8所示,分色鏡固定框85中,於3條框體85a、85b、85c分別形成有槽86,分色鏡80A、80B之各邊(三邊)亦可嵌合於該3條槽86中並利用接著劑進行固定。又,與圖7所示者相同,2片分色鏡80A、80B之前端部83及2條分色鏡固定框85之前端部85d以無間隙之方式密接,較佳為以無間隙之方式接著。As a variation of this embodiment, as shown in Fig. 8, in the dichroic
(第4實施形態)
其次,參照圖9對第4實施形態之光源裝置70進行說明。如圖9所示,本實施形態中,於V字形之2片分色鏡80A、80B之側方,於相對於光軸方向L垂直之平面上配置有2種之2個第2LED陣列75A、75B。又,其中2個第2LED陣列75A、75A與另外2個第2LED陣列75B、75B於該平面上以90°間隔交替配置。(Fourth Embodiment)
Next, the
例如,第1LED陣列71使用峰值波長為365 nm之LED元件72,一第2LED陣列75A使用峰值波長為385 nm之LED元件76A,另一第2LED陣列75B使用峰值波長為330 nm之LED元件76B。並且,於使用第1LED陣列71與一第2LED陣列75A之情形、及使用第1LED陣列71與另一第2LED陣列75B之情形時,切換使用2種不同之分色鏡80、90。因此,分色鏡80、90以可改變安裝狀態而裝卸之方式配置於未圖示之鏡安裝部。
再者,分色鏡90與上述實施形態1~3中記載之分色鏡80相同,由2片分色鏡90A、90B構成。但本實施形態中,分色鏡80、90對應2個第2LED元件76A、76B,其反射特定波長頻帶之特性不同。For example, the
於切換使用第2LED陣列75A、75B時,使用第1LED陣列71與一第2LED陣列75A時之分色鏡80與使用第1LED陣列71與另一第2LED陣列75B時之分色鏡90以分色鏡80A、80B、90A、90B之排列方向於該平面上相互正交之方式配置。When switching between the
藉此,於光源裝置設為可切換2種第2LED元件76A、76B而進行曝光之形式時,僅交換分色鏡80、90,不必交換第2LED陣列75A、75B,無需進行交換第2LED陣列75A、75B之情形時之電氣系統或冷卻系統之更換作業。With this, when the light source device is set to a form that can switch between the two
又,作為本實施形態之變化例,於2種第2LED陣列75A、75B之峰值波長相同之情形時,亦可設為能夠使分色鏡80旋轉之構成。並且,於分別使用LED陣列75A、75B時,根據所使用之LED陣列75A、75B使分色鏡80之朝向旋轉。In addition, as a variation of the present embodiment, when the peak wavelengths of the two
再者,本發明並不限定於上述各實施形態,可適當地進行改變、改良等。 例如,雖然於上述實施形態中以藉由分色鏡將峰值波長不同之光予以合成之方式進行了說明,但本發明之光合成元件並不限定於此,亦可為分色稜鏡。In addition, the present invention is not limited to the above-mentioned respective embodiments, and changes, improvements, etc. can be appropriately made. For example, although the above-mentioned embodiment has described the method of synthesizing light of different peak wavelengths by a dichroic mirror, the light synthesizing element of the present invention is not limited to this, and may be a dichroic beam.
如圖10所示,分色稜鏡180係使為玻璃或塑膠等具有較高透過率之材料之3個直角稜鏡181、182、183結合而成者。各稜鏡181、182、183於側視時具有大致直角等腰三角形形狀,稜鏡181使用較稜鏡182、183大者。分色稜鏡180具有經由未圖示之分色膜使稜鏡181之除斜邊以外之邊與稜鏡182、183之斜邊結合而成之側視長方形形狀。又,配置有分色膜之稜鏡181、182之界面184與稜鏡181、183之界面185以相對於光軸方向L大致45°之角度傾斜,2個界面184、185以呈90°交叉之方式形成。藉此,2片分色膜以於複眼透鏡側密接之方式呈大致V字形配置。As shown in Figure 10, the
分色稜鏡180可使來自第1LED陣列71與第2LED陣列75之光通過界面181a、182a、182b、183a、183b、184、185(包括入光面與出光面)之次數相等。又,藉由使用分色稜鏡180,而無需用以使2片分色鏡密接之構造。The
又,上述實施形態中,使用呈V字形配置之分色鏡,使自2個LED陣列出射之光經由分色鏡出射至複眼透鏡65。另一方面,作為本發明之另一光學裝置70A,如圖11所示,不具有分色鏡80A、80B,僅由1個LED陣列78構成,該LED陣列78亦可與複眼透鏡65直接對向配置。In addition, in the above-mentioned embodiment, dichroic mirrors arranged in a V shape are used, and the light emitted from the two LED arrays is emitted to the fly-
於該情形時,LED陣列78中,第1LED元件72與第2LED元件76以混合存在之方式對齊配置。因此,關於自LED陣列78照射之光,第1LED元件72之光與第2LED元件76之光混合並出射至複眼透鏡65。In this case, in the
關於自第2LED元件76照射之光之峰值波長,使感度與感光材料之聚合起始劑之峰值波長(感光波長)一致,成為300~355 nm之任一波長,關於自第1LED元件72照射之光之峰值波長,使感度與該聚合起始劑之吸收之麓部一致,成為360~380 nm之範圍中之任一波長。具體而言,自第2LED元件76照射之光之峰值波長例如設定為335 nm,自第1LED元件72照射之光之峰值波長例如設定為365 nm。Regarding the peak wavelength of the light irradiated from the
藉此,可高效率地使阻劑感光,並且無需用以將光予以合成之分色鏡等光合成元件,又,可使LED陣列78與複眼透鏡65近接配置,從而效率提昇。又,亦無需使第1及第2LED元件72、76之光之波長間隔20 nm以上之限制,可根據感光材料之感度自由地設定峰值波長。Thereby, the resist can be efficiently sensitized, and no light synthesis element such as a dichroic mirror for synthesizing light is required. Furthermore, the
又,如圖12所示之又一變化例,亦可由1片分色鏡80代替呈V字形配置之2片分色鏡80A、80B構成光源裝置70B。於該情形時,使具有複數個第1LED元件72之第1LED陣列71與具有複數個第2LED元件76之第2LED陣列75正交配置,使分色鏡80相對於第1LED陣列71及第2LED陣列75傾斜45°而配置。In addition, as shown in another modification of FIG. 12, the
藉此,自第1LED陣列71照射之光透過分色鏡80入射至複眼透鏡65,自第2LED陣列75照射之光被分色鏡80反射,與自第1LED陣列71照射之光合成並入射至複眼透鏡65。Thereby, the light irradiated from the
再者,彩色濾光片阻劑係將聚合起始劑、顏料、聚合性單體、聚合物、溶劑加以混合而製成,作為於300~355 nm之範圍具有吸收峰之聚合起始劑,可列舉以下之(1)~(10)。該等聚合起始劑中,較佳為高感度之(9)Irgacure OXE01及(10)Irgacure OXE02。Furthermore, the color filter resist is made by mixing a polymerization initiator, a pigment, a polymerizable monomer, a polymer, and a solvent. As a polymerization initiator having an absorption peak in the range of 300 to 355 nm, it can List the following (1) to (10). Among these polymerization initiators, high-sensitivity (9) Irgacure OXE01 and (10) Irgacure OXE02 are preferred.
(1)名稱:Omnirad184(註冊商標)、IGM Resins B.V.公司製造之(1-羥基環己基-苯基甲酮) [化1] (1) Name: Omnirad184 (registered trademark), (1-hydroxycyclohexyl-phenyl ketone) manufactured by IGM Resins BV [Chemical 1]
(2)名稱:Omnirad1173(註冊商標)、IGM Resins B.V.公司製造之(2-羥基-2-甲基-1-苯基丙酮) [化2] (2) Name: Omnirad1173 (registered trademark), (2-hydroxy-2-methyl-1-phenylacetone) manufactured by IGM Resins BV [Chemical 2]
(3)名稱:Omnirad651(註冊商標)、IGM Resins B.V.公司製造之(2,2-二甲氧基-2-苯基苯乙酮) [化3] (3) Name: Omnirad651 (registered trademark), (2,2-dimethoxy-2-phenylacetophenone) manufactured by IGM Resins BV [Chemical 3]
(4)名稱:Omnirad2959(註冊商標)、IGM Resins B.V.公司製造之(1-[4-(2-羥基乙氧基)-苯基]-2-羥基-甲基丙酮) [化4] (4) Name: Omnirad 2959 (registered trademark), (1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-methylacetone) manufactured by IGM Resins BV [Chem 4]
(5)名稱:Omnirad127(註冊商標)、IGM Resins B.V.公司製造之(2-羥基-1-(4-(4-(2-羥基-2-甲基丙醯基)苄基)苯基)-2-甲基丙-1-酮) [化5] (5) Name: Omnirad127 (registered trademark), (2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropanyl)benzyl)phenyl) manufactured by IGM Resins BV 2-Methylpropan-1-one) [Chemical 5]
(6)名稱:Omnirad369(註冊商標)、IGM Resins B.V.公司製造之(2-苄基-2-(二甲胺基)-4'-(N-嗎啉基)丁醯苯) [化6] (6) Name: Omnirad369 (registered trademark), (2-benzyl-2-(dimethylamino)-4'-(N-morpholinyl)butyrobenzene) manufactured by IGM Resins BV (Chemical Formula 6)
(7)名稱:Omnirad379EG(註冊商標)、IGM Resins B.V.公司製造之(2-二甲胺基-2-(4-甲基-苄基)-1-(4-嗎啉-4-基-苯基)丁-1-酮) [化7] (7) Name: Omnirad379EG (registered trademark), (2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-benzene) manufactured by IGM Resins BV Base) butan-1-one) [化7]
(8)名稱:Omnirad MBF(註冊商標)、IGM Resins B.V.公司製造之(苯甲醯甲酸甲酯) [化8] (8) Name: Omnirad MBF (registered trademark), (methyl benzoate) manufactured by IGM Resins BV [Chemical 8]
(9)名稱:Irgacure OXE01(註冊商標)、BASF Japan股份有限公司製造之(1,2-辛二酮, 1-[4-(苯硫基)苯基]-, 2-(鄰苯甲醯肟) [化9] (9) Name: Irgacure OXE01 (registered trademark), (1,2-octanedione, 1-[4-(phenylthio)phenyl]-, 2-(o-benzoyl) manufactured by BASF Japan Co., Ltd. Oxime) [Chemical 9]
(10)名稱:Irgacure OXE02(註冊商標)、BASF Japan股份有限公司製造之(乙酮, 1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-, 1-(O-乙醯肟) [化10] (10) Name: Irgacure OXE02 (registered trademark), (ethyl ketone, 1-[9-ethyl-6-(2-methylbenzyl)-9H-carbazole-3 manufactured by BASF Japan Co., Ltd.) -Based]-, 1-(O-acetoxime) [Chemical 10]
再者,本申請案係基於2019年3月4日提出申請之日本專利申請案(日本專利特願2019-038939)者,將其內容作為參照引用至本申請案中。In addition, this application is based on a Japanese patent application (Japanese Patent Application No. 2019-038939) filed on March 4, 2019, and the content is incorporated into this application as a reference.
1:遮罩載置台 2:工件載置台 3:照明裝置 4:裝置基底 4a:支柱 5:X軸載置台進給機構 5a:X軸進給台 6:Y軸載置台進給機構 6a:Y軸進給台 6b:微動載置台 7:上下粗動裝置 8:上下微動裝置 9:固定台 10:導軌 11:滑塊 12:滑體 12a:凸緣 14:載置台粗動軸 14a:線性運動軸承 15:基板側位移感測器 17:馬達 18:Y軸雷射干涉儀 19:棒式反射鏡 20:第1線性馬達 21:第2線性馬達 24:遮罩基框 25:遮罩框架 26:遮罩固持器 27:間隙感測器 51:導軌 52:滑塊 53:導軌 54:滑塊 65:複眼透鏡 65a:透鏡元件 66:平面鏡 67:準直鏡 68:平面鏡 70:光源裝置 70A:光源裝置 70B:光源裝置 71:第1LED陣列 72:第1LED元件 75:第2LED陣列 75A:第2LED陣列 75B:第2LED陣列 76:第2LED元件 76A:第2LED元件 76B:第2LED元件 78:LED陣列(光源裝置) 80:光合成元件(分色鏡) 80A:光合成元件(分色鏡) 80B:光合成元件(分色鏡) 81:分色膜 82:透明介質 83:端部 85:分色鏡固定框 85a:框體 85b:框體 85c:框體 85d:分色鏡固定框之前端部 86:槽 87:按壓螺絲 88:緩衝材 90:分色鏡 90A:分色鏡 90B:分色鏡 180:光合成元件(分色稜鏡) 181:直角稜鏡 182:直角稜鏡 183:直角稜鏡 181a:界面 182a:界面 182b:界面 183a:界面 183b:界面 184:界面 185:界面 EL:光路 L:光軸方向 L1:第1LED陣列之長度 L2:第2LED陣列之長度 L3:分色鏡之長度 M:遮罩 PE:近接曝光裝置 W:工件(基板) θ1:角度 θ2:角度1: Mask stage 2: Workpiece mounting table 3: Lighting device 4: Device base 4a: Pillar 5: X-axis table feed mechanism 5a: X axis feed table 6: Y-axis table feed mechanism 6a: Y axis feed table 6b: Micro-motion stage 7: Up and down coarse moving device 8: Up and down micro movement device 9: Fixed table 10: Rail 11: Slider 12: Slippery body 12a: flange 14: Coarse moving axis of the stage 14a: Linear motion bearing 15: substrate side displacement sensor 17: Motor 18: Y-axis laser interferometer 19: Rod mirror 20: 1st linear motor 21: 2nd linear motor 24: Mask base frame 25: Mask frame 26: Mask holder 27: Gap sensor 51: Rail 52: Slider 53: Rail 54: Slider 65: compound eye lens 65a: lens element 66: flat mirror 67: collimator lens 68: flat mirror 70: Light source device 70A: Light source device 70B: Light source device 71: 1st LED array 72: The first LED element 75: 2nd LED array 75A: 2nd LED array 75B: 2nd LED array 76: 2nd LED element 76A: 2nd LED element 76B: 2nd LED element 78: LED array (light source device) 80: Light synthesis element (dichroic mirror) 80A: Light synthesis element (dichroic mirror) 80B: Light synthesis element (dichroic mirror) 81: Dichroic film 82: transparent medium 83: end 85: dichroic mirror fixed frame 85a: frame 85b: frame 85c: frame 85d: The front end of the dichroic mirror fixed frame 86: Slot 87: Press the screw 88: buffer material 90: dichroic mirror 90A: Dichroic mirror 90B: Dichroic mirror 180: Light synthesis element (color separation 鏡) 181: right angle 182: right angle 183: right angle 181a: Interface 182a: Interface 182b: Interface 183a: Interface 183b: Interface 184: Interface 185: Interface EL: light path L: Optical axis direction L1: Length of the first LED array L2: Length of the second LED array L3: Length of dichroic mirror M: Mask PE: Proximity Exposure Device W: Workpiece (substrate) θ1: Angle θ2: Angle
圖1係本發明之第1實施形態之曝光裝置之前視圖。 圖2係表示圖1所示之照明裝置之構成之圖。 圖3係第1實施形態之光源裝置之概略構成圖。 圖4(a)係表示作為一例之分色鏡之透過率之曲線圖,圖4(b)係圖4(a)之IV部分之放大圖。 圖5(a)係表示圖4之分色鏡之反射率之曲線圖,圖5(b)係圖5(a)之V部分之放大圖。 圖6係第2實施形態之光源裝置之概略構成圖。 圖7(a)係表示第3實施形態之光源裝置中之分色鏡之安裝狀態的側視圖,圖7(b)係圖7(a)之沿A方向觀察之圖。 圖8(a)係表示第3實施形態之變化例之光源裝置中之分色鏡之另一安裝狀態的側視圖,圖8(b)係圖8(a)之沿B方向觀察之圖。 圖9係表示第4實施形態之光源裝置之情形時之於與光軸方向垂直之平面上配置之2種第2LED陣列及2個分色鏡的概略俯視圖。 圖10係使用有分色稜鏡之本發明之變化例之光源裝置之概略構成圖。 圖11係作為本發明之另一變化例之光源裝置之LED陣列的前視圖。 圖12係作為本發明之又一變化例之光源裝置之LED陣列的前視圖。Fig. 1 is a front view of the exposure apparatus according to the first embodiment of the present invention. Fig. 2 is a diagram showing the structure of the lighting device shown in Fig. 1. Fig. 3 is a schematic configuration diagram of the light source device of the first embodiment. Fig. 4(a) is a graph showing the transmittance of a dichroic mirror as an example, and Fig. 4(b) is an enlarged view of part IV of Fig. 4(a). Fig. 5(a) is a graph showing the reflectance of the dichroic mirror of Fig. 4, and Fig. 5(b) is an enlarged view of part V of Fig. 5(a). Fig. 6 is a schematic configuration diagram of a light source device of the second embodiment. Fig. 7(a) is a side view showing the installation state of the dichroic mirror in the light source device of the third embodiment, and Fig. 7(b) is a view viewed from the direction A in Fig. 7(a). Fig. 8(a) is a side view showing another mounted state of the dichroic mirror in the light source device of the modified example of the third embodiment, and Fig. 8(b) is a view of Fig. 8(a) viewed from the direction B. 9 is a schematic plan view showing two types of second LED arrays and two dichroic mirrors arranged on a plane perpendicular to the optical axis direction in the case of the light source device of the fourth embodiment. Fig. 10 is a schematic configuration diagram of a light source device according to a modification of the present invention using a color separation ring. Fig. 11 is a front view of an LED array of a light source device as another modification of the present invention. Fig. 12 is a front view of an LED array of a light source device as yet another modification of the present invention.
65:複眼透鏡 65: compound eye lens
65a:透鏡元件 65a: lens element
70:光源裝置 70: Light source device
71:第1LED陣列 71: 1st LED array
72:第1LED元件 72: The first LED element
75:第2LED陣列 75: 2nd LED array
76:第2LED元件 76: 2nd LED element
80:光合成元件(分色鏡) 80: Light synthesis element (dichroic mirror)
80A:光合成元件(分色鏡) 80A: Light synthesis element (dichroic mirror)
80B:光合成元件(分色鏡) 80B: Light synthesis element (dichroic mirror)
81:分色膜 81: Dichroic film
82:透明介質 82: transparent medium
L:光軸方向 L: Optical axis direction
L1:第1LED陣列之長度 L1: Length of the first LED array
L2:第2LED陣列之長度 L2: Length of the second LED array
L3:分色鏡之長度 L3: Length of dichroic mirror
θ1:角度 θ1: Angle
θ2:角度 θ2: Angle
Claims (14)
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JP2019-038939 | 2019-03-04 |
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JP (1) | JPWO2020179740A1 (en) |
KR (1) | KR20210134326A (en) |
CN (1) | CN113544589A (en) |
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JP2006184709A (en) * | 2004-12-28 | 2006-07-13 | Nikon Corp | Imaging optics, exposure apparatus and method for manufacturing microdevice |
US20100283978A1 (en) | 2009-05-07 | 2010-11-11 | Ultratech,Inc. | LED-based UV illuminators and lithography systems using same |
JPWO2012067246A1 (en) * | 2010-11-19 | 2014-05-19 | Nskテクノロジー株式会社 | Proximity exposure apparatus and proximity exposure method |
JP5908297B2 (en) * | 2012-02-09 | 2016-04-26 | 株式会社トプコン | Exposure equipment |
JP6215560B2 (en) * | 2013-04-16 | 2017-10-18 | 株式会社オーク製作所 | Exposure equipment |
JP6282847B2 (en) * | 2013-11-19 | 2018-02-21 | Hoya株式会社 | Photomask and method of manufacturing substrate using the photomask |
JP2016071243A (en) * | 2014-09-30 | 2016-05-09 | 富士フイルム株式会社 | Method for forming resin pattern, method for forming pattern, cured film, liquid crystal display device, organic el display device, and touch panel display device |
JP6623847B2 (en) * | 2016-03-07 | 2019-12-25 | ウシオ電機株式会社 | Light source device and exposure apparatus having the same |
JP6654956B2 (en) * | 2016-04-01 | 2020-02-26 | シーシーエス株式会社 | Light irradiation device |
DE202016103819U1 (en) | 2016-07-14 | 2017-10-20 | Suss Microtec Lithography Gmbh | Light source arrangement for an exposure system and photolithography exposure system |
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