JP2006184709A - Imaging optics, exposure apparatus and method for manufacturing microdevice - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide imaging optics in which color aberration is favorably corrected even for light in a wavelength region including j-line (at 313 nm). <P>SOLUTION: The imaging optics K1, K2 for imaging an image on a first plane M onto a second plane P include at least three combinations of: first transmissive optical members G1, G3, G7 comprising a fluoride: and second transmissive optical members G2, G4, G8 disposed adjacent to the first transmissive optical members G1, G3, G7, respectively and having different dispersions from those of the first optical members G1, G3, G7. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an imaging optical system for forming an image of a pattern on a first surface on a second surface, an exposure apparatus for projecting and exposing an image of a pattern on a mask onto a glass substrate via the imaging optical system, The present invention relates to a method of manufacturing a micro device using the exposure apparatus.

  In recent years, liquid crystal display panels are frequently used as display elements for personal computers and televisions. The liquid crystal display panel is manufactured by patterning a transparent thin film electrode on a glass substrate into a desired shape by a photolithography technique. As an apparatus for this photolithography, a projection exposure apparatus that exposes an original pattern formed on a mask onto a photoresist layer on a glass substrate through a projection optical system is used (see, for example, Patent Document 1). .

  The resolution of the projection optical system provided in the projection exposure apparatus becomes higher as the exposure wavelength used becomes shorter and the numerical aperture of the projection optical system becomes larger. For this reason, along with the miniaturization of the exposure pattern, the exposure wavelength used in the projection exposure apparatus has become shorter year by year, and the numerical aperture of the projection optical system has also increased.

JP 2001-337463 A

  By the way, illumination light emitted from a mercury lamp or an ultra-high pressure mercury lamp used as a light source of a projection exposure apparatus includes g-line (435 nm) light, h-line (404 nm) light, and i-line (365 nm). Light and j-line (313 nm) light are included, and conventionally exposure was performed using g-line light, h-line light, and i-line light.

  However, along with the miniaturization of the exposure pattern, the use of light in the j-ray wavelength region emitted from a mercury lamp has been proposed, but the light power in the j-ray wavelength region is g-line, h-line, i-line. Therefore, the throughput decreases when exposure is performed using only light in the j-ray wavelength region. Therefore, when exposing an ultrafine pattern that requires high resolution, light including the j-line wavelength region is used, and when exposing a slightly rough pattern that requires a certain level of resolution, the j-line wavelength region is used. It is desirable to perform wavelength switching so that light not included can be used.

  An object of the present invention is to provide an imaging optical system in which chromatic aberration is well corrected with respect to light in a wavelength range including j-ray (313 nm) light, an exposure apparatus including the imaging optical system, and the exposure apparatus. It is to provide a manufacturing method of the used microdevice.

  The imaging optical system of the present invention is an imaging optical system that forms an image of a first surface on a second surface, and is adjacent to the first transmission optical member made of fluoride and the first transmission optical member. And at least three combinations of the second transmission optical member having dispersion different from that of the first transmission optical member.

  According to the imaging optical system of the present invention, at least three combinations of the first transmission optical member made of fluoride and the second transmission optical member made of quartz, for example, having dispersion different from fluoride. Therefore, it is possible to satisfactorily correct lateral chromatic aberration and axial chromatic aberration due to light in the wavelength range of j-line (313 nm), i-line (365 nm), and h-line (404 nm).

  Further, the exposure apparatus of the present invention is an exposure apparatus comprising: an illumination optical system that illuminates a mask pattern using illumination light; and a projection optical system that projects the mask pattern onto a photosensitive substrate. Comprises the imaging optical system of the present invention, wherein the imaging optical system projects the pattern image of the mask set on the first surface onto the photosensitive substrate set on the second surface. Features.

  According to the exposure apparatus of the present invention, the projection optical system is the imaging optical system of the present invention, that is, imaging in which magnification chromatic aberration and axial chromatic aberration are well corrected for light in the wavelength range of j-line, i-line, and h-line. Since the optical system is provided, both exposure that emphasizes high resolution and exposure that emphasizes high throughput can be performed satisfactorily.

  Further, the exposure apparatus of the present invention illuminates the pattern of the mask arranged on the first surface with the illumination light having the wavelength switched by the switching means for switching the wavelength of the illumination light, and An exposure apparatus comprising: a projection optical system that projects an image of a mask pattern onto a photosensitive substrate disposed on a second surface; and a changing unit that changes a correction range of chromatic aberration of the projection optical system, and the changing unit includes: The switching means is configured to be detachable in the optical path between the first surface and the second surface in accordance with the switching of the wavelength of the illumination light.

  According to the exposure apparatus of the present invention, since the projection optical system includes a changing unit that changes the correction range of chromatic aberration, it is possible to satisfactorily correct lateral chromatic aberration and axial chromatic aberration with respect to light in different exposure wavelength ranges. Accordingly, for example, illumination light in the wavelength range of j-line and i-line is used in response to switching of the wavelength of illumination light (for example, j-line + i-line to i-line + h-line or i-line + h-line to j-line + i-line). Both exposure with an emphasis on high resolution and exposure with an emphasis on high throughput using illumination light in the wavelength range of h-line and i-line, for example, can be performed satisfactorily.

  Further, the microdevice manufacturing method of the present invention includes an exposure step of exposing a mask pattern onto a photosensitive substrate, and a developing step of developing the photosensitive substrate exposed by the exposure step. In the exposure step, the exposure apparatus of the present invention is used.

  According to the microdevice manufacturing method of the present invention, since exposure is performed using the exposure apparatus of the present invention, lateral chromatic aberration and axial chromatic aberration with respect to light in a different exposure wavelength range or light in a wide wavelength range are well corrected. Exposure can be performed in a state. Therefore, it is possible to satisfactorily perform both exposure with an emphasis on high resolution and exposure with an emphasis on high throughput, and a good microdevice can be obtained.

  The microdevice manufacturing method of the present invention includes an exposure step of exposing a mask pattern onto a photosensitive substrate using a projection optical system, and a development step of developing the photosensitive substrate exposed by the exposure step. The exposure method includes a switching step of switching the wavelength of illumination light, and a correction range of chromatic aberration of the projection optical system according to the switching of the wavelength of illumination light by the switching step. It includes a changing step of changing, an illuminating step of illuminating the mask pattern with illumination light, and a projecting step of projecting the mask pattern onto a photosensitive substrate.

  According to the microdevice manufacturing method of the present invention, since the correction range of chromatic aberration of the projection optical system can be changed, the wavelength of illumination light is switched (for example, from j-line + i-line to i-line + h-line or i-line + h (J-line to i-line + i-line)), it is possible to satisfactorily perform both exposure with an emphasis on high resolution or exposure with an emphasis on high throughput in a state in which chromatic aberration is corrected, and a good micro device Obtainable.

  Further, the microdevice manufacturing method of the present invention includes an exposure step of exposing a mask pattern onto a photosensitive substrate, and a developing step of developing the photosensitive substrate exposed by the exposure step. The exposure step includes a power exposure step for performing power-oriented exposure by switching the wavelength of illumination light, and a high-resolution exposure for performing exposure with high resolution by switching the wavelength of illumination light. And a process.

  According to the microdevice manufacturing method of the present invention, power exposure that performs power-oriented exposure can be performed by switching the wavelength of illumination light. You can get a device. In addition, by switching the wavelength of the illumination light, high-resolution exposure that performs high-resolution exposure can also be performed, so that a fine pattern can be exposed with high resolution and a good microdevice can be obtained. be able to.

  According to the imaging optical system of the present invention, since it includes at least three combinations of the first transmission optical member made of fluoride and the second transmission optical member having dispersion different from fluoride, for example, It is possible to satisfactorily correct lateral chromatic aberration and axial chromatic aberration due to light in the wavelength range of j-line (313 nm), i-line (365 nm), and h-line (404 nm).

  According to the exposure apparatus of the present invention, since the projection optical system includes a changing unit that changes the correction range of chromatic aberration, it is possible to satisfactorily correct lateral chromatic aberration and axial chromatic aberration with respect to light in different exposure wavelength ranges. Therefore, both exposure with an emphasis on high resolution and exposure with an emphasis on high throughput can be performed satisfactorily in response to switching of the wavelength of illumination light.

  According to the microdevice manufacturing method of the present invention, since the correction range of chromatic aberration of the projection optical system can be changed, the lateral chromatic aberration and the axial chromatic aberration due to light in different exposure wavelength ranges can be corrected appropriately and appropriately. . Therefore, in response to the switching of the wavelength of the illumination light, both exposure with an emphasis on high resolution and exposure with an emphasis on high throughput can be performed in a state where chromatic aberration is corrected, and a good microdevice can be obtained. Obtainable.

  Hereinafter, an exposure apparatus according to a first embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view showing a schematic configuration of the entire exposure apparatus according to the first embodiment. In the first embodiment, a mask (with respect to a projection optical system PL comprising a plurality of catadioptric projection optical units PL1, PL3 to PL5 and a projection optical unit (not shown) (hereinafter referred to as projection optical unit PL2) is provided. The image of the pattern DP (see FIG. 2) of the liquid crystal display element formed on the mask M while relatively moving the first surface (M) and the plate (second surface) P as the photosensitive substrate on the plate P. A step-and-scan type exposure apparatus for transferring will be described as an example.

  In the following description, the XYZ orthogonal coordinate system shown in each drawing is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the plate P, and the Z axis is set in a direction orthogonal to the plate P. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z-axis is set vertically upward. In this embodiment, the direction (scanning direction) in which the mask M and the plate P are moved is set in the X-axis direction.

  The exposure apparatus according to the present embodiment includes an illumination optical system IL for uniformly illuminating a mask M supported in parallel to the XY plane via a mask holder (not shown) on a mask stage MS (see FIG. 2). I have. FIG. 2 is a diagram illustrating a configuration of the illumination optical system IL, and the same members as those illustrated in FIG. 1 are denoted by the same reference numerals. As shown in FIGS. 1 and 2, the illumination optical system IL includes a light source 1 made of, for example, a mercury lamp or an ultrahigh pressure mercury lamp. Since the light source 1 is arranged at the first focal position of the elliptical mirror 2, the illumination light beam emitted from the light source 1 forms a light source image at the second focal position of the elliptical mirror 2 via the dichroic mirror 3.

  In the present embodiment, the light emitted from the light source 1 is reflected by the reflective film formed on the inner surface of the elliptical mirror 2 and the dichroic mirror 3, so that the g-line ( 435 nm) light, h-line (404 nm) light, i-line (365 nm) light, and j-line (313 nm) light including a light source image in a wavelength region of 300 nm or more is the second focal position of the elliptical mirror 2. Formed. That is, components that are unnecessary for exposure outside the wavelength region including g-line, h-line, i-line, and j-line are removed when reflected by the elliptical mirror 2 and the dichroic mirror 3.

  A shutter 4 is disposed at the second focal position of the elliptical mirror 2. The shutter 4 includes an opening plate 4a (see FIG. 2) disposed obliquely with respect to the optical axis AX1, and a shielding plate 4b (see FIG. 2) that shields or opens the opening formed in the opening plate 4a. . The shutter 4 is arranged at the second focal position of the elliptical mirror 2 because the illumination light beam emitted from the light source 1 is focused so that the opening formed in the aperture plate 4a is shielded with a small amount of movement of the shield plate 4b. This is because the amount of the illumination light beam passing through the aperture can be changed abruptly to obtain a pulsed illumination light beam.

  The divergent light beam from the light source image formed at the second focal position of the elliptical mirror 2 is converted into a substantially parallel light beam by the collimator lens 5 and enters the wavelength selection filter (switching means) 6a or the wavelength selection filter 6b. The wavelength selection filter 6a transmits only a light beam in a wavelength range including i-line and j-line, and the wavelength selection filter 6b transmits only a light beam in a wavelength region including h-line and i-line. The wavelength selection filters 6a and 6b are configured to be insertable into and removable from the optical path between the light source 1 and the mask M. That is, the insertion / removal of the wavelength selection filter 6a or the wavelength selection filter 6b into the optical path between the light source 1 and the mask M is performed by the main control system 20 in FIG.

  The light that has passed through the wavelength selection filter 6 a or the wavelength selection filter 6 b forms an image again via the relay lens 8. An incident end 9a of the light guide 9 is disposed in the vicinity of the imaging position. The light guide 9 is a random light guide fiber configured by, for example, randomly bundling a large number of fiber strands, and has the same number of incident ends 9a as the number of light sources 1 (one in FIG. 1), and a projection optical system. The same number of exit ends as the number of projection optical units (PL1 to PL5) constituting PL (5 in FIG. 1), that is, exit end 9b and the other four exit ends (only exit end 9b is shown in FIG. 2). And. Thus, the light incident on the incident end 9a of the light guide 9 propagates through the inside thereof, and then is divided and emitted from the exit end 9b and the other four exit ends. In addition, when the amount of light is insufficient with only one light source 1, a plurality of light sources are provided, and each light source has a plurality of incident ends provided so that light incident from each incident end is substantially reduced. It is preferable to provide a light guide that divides into the same amount of light and emits from each exit end.

  As shown in FIG. 2, a blade 10 configured to be able to continuously change the position is disposed at the incident end 9 a of the light guide 9. The blade 10 shields a part of the incident end 9a of the light guide 9 to continuously vary the intensity of light emitted from each of the emission end 9b and the other four emission ends of the light guide 9. Is for. The amount of light shielding with respect to the incident end 9 a of the light guide 9 of the blade 10 is controlled by the main control system 20 in FIG.

  Between the exit end 9b of the light guide 9 and the mask M, a collimating lens 11b, a fly-eye integrator 12b, an aperture stop 13b (not shown in FIG. 1), a beam splitter 14b (not shown in FIG. 1), and a condenser The lens system 15b is arranged in order. Similarly, between the other four exit ends of the light guide 9 and the mask M, a collimating lens, a fly-eye integral, an aperture stop, a beam splitter, and a condenser lens system are arranged in this order.

  Here, for simplification of description, the configuration of the optical member provided between each exit end of the light guide 9 and the mask M is provided between the exit end 9b of the light guide 9 and the mask M. The collimating lens 11b, the fly-eye integrator 12b, the aperture stop 13b, the beam splitter 14b, and the condenser lens system 15b will be representatively described.

  The divergent light beam emitted from the exit end 9b of the light guide 9 is converted into a substantially parallel light beam by the collimator lens 11b, and then enters the fly-eye integrator 12b. The fly-eye integrator 12b is configured by arranging a large number of positive lens elements vertically and horizontally and densely so that the central axis thereof extends along the optical axis AX2. Accordingly, the light beam incident on the fly-eye integrator 12b is divided into wavefronts by a large number of lens elements, and a secondary light source composed of the same number of light source images as the number of lens elements is formed on the rear focal plane (ie, in the vicinity of the exit surface). Form. That is, a substantial surface light source is formed on the rear focal plane of the fly-eye integrator 12b.

  Light beams from a number of secondary light sources formed on the rear focal plane of the fly-eye integrator 12b are limited by an aperture stop 13b disposed near the rear focal plane of the fly-eye integrator 12b, The light enters the condenser lens system 15b via the splitter 14b. The aperture stop 13b is disposed at a position optically conjugate with the pupil plane of the corresponding projection optical unit PL1, and has a variable aperture for defining the range of the secondary light source that contributes to illumination. The aperture stop 13b changes the aperture diameter of the variable aperture, thereby determining an σ value (on the pupil plane relative to the aperture diameter of the pupil plane of the projection optical units PL1 to PL5 constituting the projection optical system PL). The ratio of the aperture diameter of the secondary light source image at (1) is set to a desired value.

  The light flux through the condenser lens system 15b illuminates the mask M on which the pattern DP is formed in weight. Similarly, the divergent light beams emitted from the other four exit ends of the light guide 9 are also superimposed on the mask M through the collimating lens, fly-eye integrator, aperture stop, beam splitter, and condenser lens system in this order. Irradiate each. That is, the illumination optical system IL illuminates a plurality of trapezoidal regions (illumination fields) arranged in the Y-axis direction on the mask M (five in total in FIG. 1). The light source included in the illumination optical system IL may be an ultraviolet radiation type LED or LD.

  On the other hand, light passing through the beam splitter 14b provided in the illumination optical system IL is received by an integrator sensor 17b made of a photoelectric conversion element via a condenser lens 16b as shown in FIG. The photoelectric conversion signal of the integral overnight sensor 17b is supplied to the main control system 20 via a peak hold circuit and an A / D converter (not shown). A correlation coefficient between the output of the integrator sensor 17b and the energy (exposure amount) per unit area of the light irradiated on the surface of the plate P is obtained in advance and stored in the main control system 20.

  The main control system 20 opens and closes the shutter 4 in synchronization with stage system operation information from a stage controller (not shown) that controls the plate stage on which the plate P is placed and the mask stage MS on which the mask M is placed. The control signal is output to the driving device 19 in accordance with the photoelectric conversion signal output from the integrator 17b, and the illumination light from the illumination optical system IL is irradiated onto the mask M and the intensity of the illumination light. To control.

  The light from each illumination region on the mask M is a projection optical system composed of a plurality of projection optical units PL1 to PL5 (a total of five in FIG. 1) arranged along the Y-axis direction so as to correspond to each illumination region. Incident on the system PL. The light passing through the projection optical system PL forms an image of the pattern DP on the plate P supported in parallel with the XY plane via a plate holder (not shown) on a plate stage (not shown). That is, as described above, since the projection optical units PL1 to PL5 are configured as an equal-magnification erect system, the trapezoidal exposure areas arranged in the Y-axis direction on the plate P so as to correspond to the illumination areas. In this case, an equal-size erect image of the pattern DP is formed.

  Returning to FIG. 1, the above-described mask stage MS is provided with a scanning drive system (not shown) having a long stroke for moving the mask stage MS along the X-axis direction which is the scanning direction. In addition, a pair of alignment drive systems (not shown) are provided for moving the mask stage MS by a minute amount along the Y-axis direction, which is the direction orthogonal to the scan, and rotating the mask stage MS by a minute amount around the Z-axis. The position coordinate of the mask stage MS is measured by a laser interferometer (not shown) using the movable mirror 25 and the position is controlled. Further, the mask stage MS is configured such that the position in the Z direction is variable.

  A similar drive system is also provided for the plate stage. That is, a scanning drive system (not shown) having a long stroke for moving the plate stage along the X-axis direction, which is the scanning direction, and moving the plate stage by a minute amount along the Y-axis direction, which is the orthogonal direction of scanning. In addition, a pair of alignment drive systems (not shown) are provided for rotating by a minute amount around the Z axis. The position coordinate of the plate stage is measured and controlled by a laser interferometer (not shown) using the movable mirror 26. Similarly to the mask stage MS, the plate stage is also configured to be movable in the Z direction. The positions of the mask stage MS and the plate stage in the Z direction are controlled by the main control system 20.

  The above-described projection optical units PL1, PL3, and PL5 are arranged as a first row at a predetermined interval in a direction orthogonal to the scanning direction. Similarly, the projection optical units PL2 and PL4 are arranged in the second row with a predetermined interval in a direction orthogonal to the scanning direction. Between the projection optical unit of the first row and the projection optical unit of the second row, an off-axis alignment system 52 for aligning the plate P and an auto for focusing the mask M and the plate P are provided. A focus system 54 is arranged.

  Further, an illuminance measuring unit 29 for measuring the illuminance of light irradiated on the plate P via the projection optical system PL is provided on the plate stage, and light (image) irradiated on the plate P is provided. An aerial image measuring device 24 is provided for measuring the spatial distribution.

  FIG. 4 is a diagram showing a configuration of the projection optical unit PL1 according to the embodiment of the present invention. The configuration of the projection optical units PL2 to PL5 is the same as that of the projection optical unit PL1. The projection optical unit PL1 shown in the figure forms a first imaging optical system K1 that forms a primary image of a mask pattern based on the light from the mask M, and an erect image of the mask pattern based on the light from the primary image. (Glass substrate) 2nd imaging optical system K2 formed on P. The configuration of the second imaging optical system K2 is the same as that of the first imaging optical system K1.

  As shown in FIG. 4, the first imaging optical system K <b> 1 has a mask surface (XY) that reflects light incident along the −Z direction from a mask M emitted from a parallel flat plate 40 described later in the + X direction. The first reflecting surface P1r is provided obliquely at an angle of 45 ° with respect to the plane. Further, the first imaging optical system K1 includes, in order from the first reflecting surface P1r side, a biconvex lens (first transmission optical member) G1 made of fluorite (fluoride), and quartz (first transmission optical member). Bi-concave lens (second transmissive optical member) G2 composed of different dispersion), biconvex lens (first transmissive optical member) G3 composed of fluorite, and composed of quartz with the concave surface facing the first reflective surface Plr side Negative meniscus lens (second transmission optical member) G4, biconvex lens G5 made of fluorite, positive meniscus lens G6 made of fluorite with the concave surface facing the first reflecting surface Plr, and made of fluorite. A positive meniscus lens (first transmission optical member) G7 having a concave surface facing the first reflecting surface Plr, and a negative meniscus lens (second transmitting optical member) G made of quartz and having a concave surface facing the first reflecting surface Plr. , And a first convex reflecting mirror M1 with its convex surface facing the first reflecting surface Plr side. Further, the first imaging optical system K1 is obliquely arranged at an angle of 45 ° with respect to the mask M plane (XY plane) so as to reflect light incident along the −X direction from the biconvex lens G1 in the −Z direction. The second reflecting surface P2r is provided.

  A combination of a biconvex lens G1 (fluorite) constituting the first imaging optical system K1 and a biconcave lens G2 (quartz) provided adjacent to the biconvex lens G1, a biconvex lens G3 (fluorite) and a biconvex lens G3. The combination of the negative meniscus lens G4 (quartz) provided adjacent to the positive meniscus lens G7 (fluorite) and the negative meniscus lens G8 (quartz) provided adjacent to the positive meniscus lens G7 is projected. This contributes to correction of chromatic aberration of the optical unit PL1. The combination of the biconvex lens G1 and the biconcave lens G2 and the combination of the biconvex lens G3 and the negative meniscus lens G4 mainly contribute to the correction of the chromatic aberration of magnification of the projection optical unit PL1, and the pattern image has a low to high portion. Accordingly, the correction of the chromatic aberration of the projection optical unit PL1 by the biconvex lens G1, the biconcave lens G2, the biconvex lens G3, and the negative meniscus lens G4 increases. The combination of the positive meniscus lens G7 and the negative meniscus lens G8 mainly contributes to the correction of the axial chromatic aberration of the projection optical unit PL1, and the correction of the chromatic aberration of the projection optical unit PL1 uniformly for all image heights of the pattern image. I do.

  A field stop FS that defines the projection area (exposure area) of the projection optical unit PL1 on the plate P is provided in the vicinity of the primary image formation position of the mask pattern. The projection optical unit PL1 includes a parallel plane plate (changing means) 40 between the mask M and the first imaging optical system K1, and a parallel plane plate (change unit) between the first imaging optical system K1 and the field stop FS. Change means) 42, a parallel plane plate (change means) 44 between the field stop FS and the second imaging optical system K2, and a parallel plane plate 46 between the second imaging optical system K2 and the plate P. Yes.

  The plane parallel plates 40, 42, 44 and 46 are detachably disposed in the optical path between the mask M and the plate P. By disposing the plane-parallel plates 40, 42, 44, and 46 in the optical path between the mask M and the plate P, the projection optical unit PL1 with light including the wavelength range of j-line (313 nm) and i-line (365 nm) is used. The chromatic aberration (magnification chromatic aberration, axial chromatic aberration) is corrected satisfactorily. Further, by retracting the plane-parallel plates 40, 42, 44, and 46 from the optical path between the mask M and the plate P, the projection optical unit PL1 with light including the wavelength range of i-line and h-line (404 nm) is used. The chromatic aberration is corrected well.

  The light from the illumination area corresponding to the projection optical unit PL1 on the mask M passes through the parallel plane plate 40, enters the first reflecting surface P1r along the −Z direction, is reflected in the + X direction, and both The lens sequentially passes through a convex lens G1, a biconcave lens G2, a biconvex lens G3, a negative meniscus lens G4, a biconvex lens G5, a positive meniscus lens G6, a positive meniscus lens G7, and a negative meniscus lens G8. The light that has passed through the negative meniscus lens G8 is reflected by the first convex reflecting mirror M1, travels along the −X direction, and is negative meniscus lens G8, positive meniscus lens G7, positive meniscus lens G6, biconvex lens G5, negative meniscus. The lens G4, the biconvex lens G3, the biconcave lens G2, and the biconvex lens G1 are sequentially passed. The light that has passed through the biconvex lens G1 is reflected by the second reflecting surface P2r and passes through the parallel plane plate 42.

  The light that has passed through the plane parallel plate 42 forms a primary image of the mask pattern in the vicinity of the field stop FS, passes through the plane parallel plate 44, and has the same configuration as the first imaging optical system K1. Passes through the optical system K2. The light that passes through the second imaging optical system K2 and travels along the −Z direction passes through the plane-parallel plate 46 and forms a secondary image of the mask pattern in the corresponding exposure region on the plate P. Here, the lateral magnification in the X direction and the lateral magnification in the Y direction of the secondary image are both +1 times. That is, the mask pattern image formed on the plate P via the projection optical unit PL1 is an equal-magnification erect image, and the projection optical system PL constitutes an equal-magnification erect system.

  FIG. 5 is a system configuration diagram of the projection optical unit PL1. The system configuration of the projection optical units PL2 to PL5 is the same as the system configuration of PL1. As shown in FIG. 5, the main control system 20 controls the first drive unit 30 to insert the parallel plane plate 40 into the optical path from the outside of the optical path between the mask M and the plate P, or from the optical path to the optical path. Evacuate outside. Further, each of the second drive unit 32, the third drive unit 34, and the fourth drive unit 36 is controlled so that each of the parallel plane plates 42, 44, and 46 is an optical path from the outside of the optical path between the mask M and the plate P. It is inserted into or retracted from the optical path to the outside of the optical path. By inserting / removing the plane parallel plates 40, 42, 44, 46 into the optical path between the mask M and the plate P, the correction range of the chromatic aberration of the projection optical unit PL1 can be changed.

  The main control system 20 has a higher power although it has a longer wavelength than the j-line when performing exposure in a power mode in which exposure is focused on power (emphasis on high throughput), that is, exposure of a pattern that does not require high resolution. A control signal is output to the driving device 21 so as to perform exposure with light in the wavelength range of h-line and i-line (see FIG. 3). Based on the control signal from the main control system 20, the driving device 21 arranges a wavelength selection filter 6 b that allows only light including the h-line and i-line wavelength ranges to pass in the optical path between the light source 1 and the mask M. To do. The main control system 20 outputs control signals to the first drive unit 30, the second drive unit 32, the third drive unit 34, and the fourth drive unit 36. Each of the first drive unit 30, the second drive unit 32, the third drive unit 34, and the fourth drive unit 36 is based on a control signal from the main control system 20, and the parallel plane plates 40, 42, 44, 46 are connected. Each is retracted out of the optical path between the mask M and the plate P.

  On the other hand, the main control system 20 performs i-line exposure when performing exposure in a high resolution mode in which exposure with an emphasis on high resolution, that is, exposure of an ultrafine pattern that requires higher resolution than high power (high throughput) is performed. Then, a control signal is output to the drive device 21 so that exposure is performed with light in the wavelength region of the j-line, which is a shorter wavelength than the h-line (see FIG. 3). Based on the control signal from the main control system 20, the driving device 21 arranges a wavelength selection filter 6 a that allows only light including the i-line and j-line wavelength ranges in the optical path between the light source 1 and the mask M. To do. The main control system 20 outputs control signals to the first drive unit 30, the second drive unit 32, the third drive unit 34, and the fourth drive unit 36, and the first drive unit 30 and the second drive unit 32. The third drive unit 34 and the fourth drive unit 36 are configured so that the parallel plane plates 40, 42, 44, 46 are respectively connected between the mask M and the plate P based on a control signal from the main control system 20. Place in the light path.

  Next, a microdevice manufacturing method using the projection exposure apparatus according to the first embodiment will be described with reference to a flowchart shown in FIG. In the microdevice manufacturing method according to the first embodiment, a liquid crystal display as a microdevice is formed by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate) P. A method for manufacturing the element will be described. In the microdevice manufacturing method according to the first embodiment, the lower layer pattern is formed on the plate P, and the upper layer pattern is formed on the plate P on which the lower layer pattern is formed. Overlay exposure is performed to form a stack. That is, after exposure of a slightly rough pattern (lower layer exposure) that does not require high resolution, exposure of an ultrafine pattern that requires high resolution (exposure of the upper layer) is performed.

  First, in order to perform exposure with high throughput, exposure is performed in a power mode in which the power of exposure light is emphasized. The main control system 20 outputs a control signal to the driving device 21 so as to perform exposure with light in the wavelength range of h-line and i-line (see FIG. 3) having a longer wavelength than the j-line but higher power. Then, by driving the driving device 21, the wavelength selection filter 6 b that passes only light including the wavelength range of h-line and i-line is disposed in the optical path between the light source 1 and the mask M. The main control system 20 also outputs control signals to the first drive unit 30, the second drive unit 32, the third drive unit 34, and the fourth drive unit 36 in each projection optical unit (PL1 to PL5). By driving the first drive unit 30, the second drive unit 32, the third drive unit 34, and the fourth drive unit 36, the parallel plane plates 40, 42, 44, and 46 (of the projection optical units PL1 to PL5) are driven. Each of the four parallel flat plates included in each is retracted out of the optical path between the mask M and the plate P (step S10).

  As a result, the slightly rough pattern of the mask M is illuminated with illumination light that is light including the wavelength range of h-line and i-line (step S11, illumination process), and the image of the slightly rough pattern of the mask M is on the plate P. (Step S12, projection process) and exposed on the plate P (step S13, power exposure process).

  Next, in order to develop the plate P on which the pattern of the mask M is exposed in step S13, the plate P is transported to the developing device, and the developing of the plate P is performed in the developing device (step S14, developing process). Thereafter, the pattern of the lower layer is formed on the plate P through each process such as an etching process and a resist stripping process. Next, the plate P on which the pattern of the lower layer is formed is transported to the coating apparatus, a new resist is applied in the coating apparatus, and the plate P coated with the new resist is transferred from the coating apparatus to this embodiment. It is conveyed to such a projection exposure apparatus.

  Next, an ultrafine pattern that requires high resolution is exposed. In this case, in order to perform exposure at a high resolution, exposure is performed in a high resolution mode that does not place importance on the power of exposure light. Therefore, the main control system 20 switches the wavelength of the illumination light (step S15). That is, the main control system 20 drives the drive device 21 so as to perform exposure with light (see FIG. 3) including the wavelength range of the i-line and the j-line, which is a shorter wavelength than the h-line. The wavelength selection filter 6b is retracted out of the optical path between the light source 1 and the mask M by driving the driving device 21 to output a control signal, and includes the i-line and j-line wavelength ranges. A wavelength selection filter 6a that allows only light to pass is inserted into the optical path between the light source 1 and the mask M (switching step).

  Next, the main control system 20 changes the correction range of the chromatic aberration of the projection optical system PL (projection optical units PL1 to PL5) according to the wavelength (i line, j line) of the illumination light switched in step S15 ( Step S16). That is, the main control system 20 drives each of the first drive unit 30, the second drive unit 32, the third drive unit 34, and the fourth drive unit 36 in each projection optical unit (PL1 to PL5) to drive 4. Each of the two plane parallel plates 40, 42, 44, 46 is moved from the outside of the optical path between the mask M and the plate P into the optical path (changing step). Before this change process was performed, the chromatic aberration of the projection optical system PL (projection optical units PL1 to PL5) with respect to light including the i-line and h-line wavelength ranges was corrected. This change process is performed. As a result, the chromatic aberration (magnification chromatic aberration, axial chromatic aberration) of the projection optical system PL (projection optical units PL1 to PL5) with respect to light including the wavelength ranges of the j-line and i-line is well corrected.

  As a result, the ultra fine pattern of the mask M is illuminated by illumination light that is light including the i-line and j-line wavelength regions (step S17, illumination process), and an image of the ultra-fine pattern of the mask M is formed on the plate P. (Step S18, projection process) and exposed on the plate P (step S19, high resolution exposure process). Next, in order to develop the plate P on which the pattern of the mask M is exposed in step S19, the plate P is transported to the developing device, and the developing of the plate P is performed in the developing device (step S20, developing process). Then, a predetermined pattern is formed on the plate P through each process such as an etching process and a resist stripping process, and the process proceeds to the next color filter forming process.

  That is, in the color filter forming process, a large number of groups of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three stripes of R, G, and B A color filter is formed by arranging a plurality of filters in the horizontal scanning line direction. And a cell assembly process is performed after a color filter formation process. In the cell assembling step, a liquid crystal panel (liquid crystal cell) is assembled using the plate P having the pattern exposed by the projection exposure apparatus according to this embodiment and the color filter obtained in the color filter forming step. In the cell assembly process, for example, liquid crystal is injected between the plate P having a predetermined pattern and the color filter obtained in the color filter forming process to manufacture a liquid crystal panel (liquid crystal cell).

  Thereafter, a module assembly process is executed. In the module assembling process, a liquid crystal display element is formed by attaching components such as an electric circuit and a backlight for performing display operation of the assembled liquid crystal panel (liquid crystal cell). According to the above-described manufacturing method of a micro device (liquid crystal display element), it is possible to perform both exposure with an emphasis on high resolution and exposure with an emphasis on high throughput in a state where the chromatic aberration of the projection optical system is well corrected. A good liquid crystal display element can be obtained.

  Note that the development process in step S14 is performed before the exposure in the high resolution mode in which high resolution is emphasized, but is performed after the exposure in the power mode and the exposure in the high resolution mode. May be. That is, the developing process in step S14 may be omitted.

  According to the projection optical system (imaging optical system) according to the first embodiment, an optical member composed of an optical member composed of fluorite (fluoride) and quartz (having dispersion different from fluoride). Since the first imaging optical system and the second imaging optical system including three combinations provided adjacent to each other are provided, different exposure wavelength ranges (for example, the first including the j-line and the i-line) Magnification chromatic aberration and axial chromatic aberration with respect to light in one exposure wavelength range and a second exposure wavelength range including i-line and h-line are favorably corrected by switching by insertion / removal (change means) of four parallel flat plates or the like. Can do.

  In addition, the projection exposure apparatus according to the first embodiment includes the projection optical system that can satisfactorily correct the lateral chromatic aberration and the axial chromatic aberration with respect to light including different exposure wavelength ranges by switching by the exchange means. Corresponding to the switching of the wavelength of the illumination light by switching the wavelength selection filter, for example, exposure that emphasizes high resolution using illumination light including the wavelength range of j-line and i-line, and the wavelength of h-line and i-line It is possible to satisfactorily perform both exposures that emphasize high throughput using illumination light including a region.

  In the first embodiment, the two imaging optical systems K1 and K2 constituting the five projection optical units PL1 to PL5 in the projection optical system PL are fluorite as a first transmission optical member. 3 sets of combinations of the lens to be configured and the lens made of quartz as the second transmission optical member disposed adjacent to the first transmission optical member, respectively, and a configuration having four or more sets It is also possible to do. In this case, it is possible to correct chromatic aberration in a wider wavelength range than that in which the chromatic aberration of the two imaging optical systems K1 and K2 constituting each of the projection optical units PL1 to PL5 in the projection optical system PL can be corrected.

  In the present invention, the first transmission optical member is not limited to being made of fluorite, but may be made of fluoride. In the present invention, the second transmission optical member is not limited to being made of quartz, but may be made of an optical member having dispersion different from fluoride.

  Thus, in the present invention, in the projection optical system or the imaging optical system, the first transmission optical member made of fluoride, and the first transmission optical member disposed adjacent to the first transmission optical member, Is not limited to a configuration including three sets of second transmissive optical members having different dispersions, and may be configured to include four or more sets.

  Moreover, in this 1st Embodiment, although the parallel plane plate is provided as a change means, you may make it provide optical members, such as lenses other than a parallel plane plate.

  In the first embodiment, the four parallel plane plates are provided as the changing means. However, at least one parallel plane plate may be provided. When one plane-parallel plate is provided, a plane-parallel plate having a thickness obtained by adding the thicknesses of the four plane-parallel plates according to this embodiment is provided between the mask and the first imaging optical system. They are arranged between one imaging optical system and a field stop, between the field stop and the second imaging optical system, and between the second imaging optical system and the plate. When two parallel plane plates are provided, the total thickness of the two parallel plane plates is the same as the total thickness of the four parallel plane plates according to this embodiment. Two parallel flat plates are arranged between the mask and the first imaging optical system, between the first imaging optical system and the field stop, between the field stop and the second image forming optical system, and second image forming optics. Arranged together in any one of the spaces between the system and the plate, or divided into any two of these four spaces. When three parallel plane plates are provided, the total thickness of the three parallel plane plates is the same as the total thickness of the four parallel plane plates according to this embodiment. Are formed between the mask and the first imaging optical system, between the first imaging optical system and the field stop, between the field stop and the second imaging optical system, and in the second connection. You may arrange | position collectively in one place of the space between an image optical system and a plate, or arrange | position two parallel plane plates in one of two places of these four spaces, and one parallel plane plate in the other. It may be arranged. Furthermore, you may arrange | position a parallel plane board in three places of these four spaces, respectively.

  The plurality of parallel flat plates need not have the same thickness. That is, as long as the entire plane-parallel plate has a predetermined optical thickness capable of correcting chromatic aberration, it is possible to combine the plane-parallel plates with different thicknesses. It is also possible to make the refractive indexes of the face plates different from each other.

  Next, a projection exposure apparatus according to a second embodiment of the present invention will be described with reference to the drawings. The projection exposure apparatus according to the second embodiment includes a projection optical system PL (projection optical units PL1, PL3 to PL5 and a projection optical unit PL2 not shown) that constitute the projection exposure apparatus according to the first embodiment. ), And a projection optical system having five projection optical units shown in FIG. Therefore, in the description of the second embodiment, a detailed description of the same configuration as that of the projection exposure apparatus according to the first embodiment is omitted. In the description of the projection exposure apparatus according to the second embodiment, the same configuration as that of the projection exposure apparatus according to the first embodiment is the same as that used in the first embodiment. This will be described using the reference numerals.

  FIG. 7 is a diagram showing a configuration of one projection optical unit (hereinafter referred to as projection optical unit PL1) provided in the projection optical system according to the second embodiment. The configuration of the other four projection optical units (hereinafter referred to as projection optical units PL2 to PL5) included in the projection optical system is the same as the configuration of the projection optical unit shown in FIG. The projection optical unit shown in the figure includes a first imaging optical system K3 that forms a primary image of a mask pattern based on light from the mask M, and an erect image of the mask pattern based on light from this primary image ( A second imaging optical system K4 formed on the glass substrate P. The configuration of the second imaging optical system K4 is the same as that of the first imaging optical system K3.

  As shown in FIG. 7, the first imaging optical system K3 has a mask surface (XY) that reflects light incident along the −Z direction from a mask M emitted from a parallel plane plate 40, which will be described later, in the + X direction. The first reflecting surface P3r is provided obliquely at an angle of 45 ° with respect to the plane. The first imaging optical system K3 includes, in order from the first reflection surface P3r side, a biconvex lens (first transmission optical member) G11 made of fluorite (fluoride), and quartz (first transmission optical member). A biconcave lens (second transmissive optical member) G12 composed of different dispersion), a biconvex lens (first transmissive optical member) G13 composed of fluorite, and a concave surface on the first reflecting surface P3r side composed of quartz. Negative meniscus lens (second transmission optical member) G14, biconvex lens G15 composed of fluorite, and positive meniscus lens (first transmission optical member) composed of fluorite and having a concave surface facing the first reflecting surface P3r G16, negative meniscus lens (second transmission optical member) G17 made of quartz and having a concave surface facing the first reflecting surface P3r, positive meniscus made of quartz and having the concave surface facing the first reflecting surface P3r Kasurenzu (second transmitting optical member) G18, a biconcave lens (first transmissive optical element) configured by fluorite G19, and a first convex reflecting mirror M2 having a convex surface facing the first reflecting surface P3r side. Further, the first imaging optical system K3 is obliquely arranged at an angle of 45 ° with respect to the mask M surface (XY plane) so as to reflect light incident along the −X direction from the biconvex lens G11 in the −Z direction. The second reflecting surface P4r is provided.

  A combination of a biconvex lens G11 (fluorite) constituting the first imaging optical system K3 and a biconcave lens G12 (quartz) provided adjacent to the biconvex lens G11, and a biconvex lens G13 (fluorite) and biconvex lens G13. Combination with negative meniscus lens G14 (quartz) provided adjacently, combination with positive meniscus lens G16 (fluorite) and negative meniscus lens G17 (quartz) provided adjacent to positive meniscus lens G16, positive meniscus The combination of the lens G18 (quartz) and the biconcave lens G19 (fluorite) provided adjacent to the positive meniscus lens G18 contributes to correction of chromatic aberration of the projection optical unit. The combination of the biconvex lens G11 and the biconcave lens G12, the combination of the biconvex lens G13 and the negative meniscus lens G14, and the combination of the positive meniscus lens G16 and the negative meniscus lens G17 mainly contributes to the correction of the chromatic aberration of magnification of the projection optical unit. Correction of chromatic aberration of the projection optical unit by the biconvex lens G11, the biconcave lens G12, the biconvex lens G13, the negative meniscus lens G14, the positive meniscus lens G16, and the negative meniscus lens G17 according to the pattern image height from the low to the high. Becomes larger. The combination of the positive meniscus lens G18 and the biconcave lens G19 mainly contributes to the correction of the axial chromatic aberration of the projection optical unit, and the chromatic aberration of the projection optical unit PL1 is corrected uniformly for all image heights of the pattern image. . That is, the chromatic aberration (magnification chromatic aberration, axial chromatic aberration) of the projection optical unit with respect to light in the wavelength range of j-line (313 nm), i-line (365 nm), and h-line (404 nm) is corrected well.

  A field stop FS2 that defines the projection area (exposure area) of the projection optical unit on the plate P is provided in the vicinity of the primary image formation position of the mask pattern.

  Further, the projection optical unit PL1 includes a parallel plane plate 50 between the mask M and the first imaging optical system K3, a parallel plane plate 52 between the first imaging optical system K3 and the field stop FS2, and a field stop FS2. Between the first imaging optical system K4 and the second imaging optical system K4, and a parallel planar plate 56 between the second imaging optical system K4 and the plate P.

  Here, unlike the first embodiment described above with reference to FIG. 4, the four parallel flat plates (50, 52, 54, 56) are fixedly installed even when switching to each exposure mode described later. However, the optical adjustment of the projection optical unit PL1 may be performed. For example, as disclosed in International Patent Publication WO / 2000/19261, at least one of the four parallel flat plates (50, 52, 54, 56) is constituted by a pair of wedge prisms. Focus correction (image plane position correction) of the variable projection optical unit by changing the optical thickness of the entire parallel plane by moving the wedge prism, or as disclosed in JP-A-2003-309053 Image plane tilt correction may be performed by rotating at least one of the pair of wedge prisms. Further, image shift adjustment is performed by rotating the parallel plane plate so that at least one of the four parallel plane plates (50, 52, 54, 56) has a rotation axis in a plane crossing the imaging optical path. Further, at least one of the plane parallel plates may have a magnification adjustment function for correcting expansion and contraction of the substrate. When adjusting this magnification, for example, a plano-concave lens and a plano-convex lens having substantially the same radius of curvature as the concave surface are provided, and the concave surface of the plano-concave lens and the convex surface of the plano-convex lens are opposed to each other to reduce power as a whole. As a configuration, the magnification can be adjusted by changing the relative distance between the plano-concave lens and the plano-convex lens.

  It is possible to combine a plurality of the above four types of adjustment mechanisms, and in the first embodiment described above with reference to FIG. 4, at least one of the above four types of adjustment mechanisms is added to obtain a desired Needless to say, the optical adjustment can be performed.

  The light from the illumination area corresponding to the projection optical unit PL1 on the mask M passes through the parallel flat plate 50, enters the first reflecting surface P3r along the −Z direction, is reflected in the + X direction, and both The lens sequentially passes through a convex lens G11, a biconcave lens G12, a biconvex lens G13, a negative meniscus lens G14, a biconvex lens G15, a positive meniscus lens G16, a negative meniscus lens G17, a positive meniscus lens G18, and a biconcave lens G19. The light that has passed through the biconcave lens G19 is reflected by the first convex reflecting mirror M2, travels along the −X direction, travels along the −X direction, is a biconcave lens G19, a positive meniscus lens G18, a negative meniscus lens G17, a positive meniscus lens G16, a biconvex lens G15, The negative meniscus lens G14, the biconvex lens G13, the biconcave lens G12, and the biconvex lens G11 are sequentially passed. The light that has passed through the biconvex lens G11 is reflected by the second reflecting surface P4r and passes through the parallel plane plate 52.

  The light that has passed through the plane-parallel plate 52 forms a primary image of the mask pattern in the vicinity of the field stop FS2, passes through the plane-parallel plate 54, and has the same configuration as the first imaging optical system K3. Passes through the optical system K4. The light that passes through the second imaging optical system K4 and travels along the −Z direction passes through the plane-parallel plate 56 and forms a secondary image of the mask pattern in the corresponding exposure region on the plate P. Here, the lateral magnification in the X direction and the lateral magnification in the Y direction of the secondary image are both +1 times. That is, the mask pattern image formed on the plate P via the projection optical unit PL1 is an equal-magnification erect image, and the projection optical system PL constitutes an equal-magnification erect system.

  The main control system 20 has a higher power although it has a longer wavelength than the j-line when performing exposure in a power mode in which power-oriented (high-throughput-oriented) exposure, that is, pattern exposure that does not require high resolution is performed. A control signal is output to the driving device 21 so as to perform exposure with light in the wavelength range of h-line and i-line (see FIG. 3). Based on the control signal from the main control system 20, the driving device 21 arranges a wavelength selection filter 6 b that allows only light including the h-line and i-line wavelength ranges to pass in the optical path between the light source 1 and the mask M. To do. In addition, the main control system 20 performs i-line exposure when performing exposure in a high resolution mode in which exposure with an emphasis on high resolution, that is, exposure of an ultrafine pattern that requires higher resolution than high power (high throughput) is performed. Then, a control signal is output to the drive device 21 so that exposure is performed with light in the wavelength region of the j-line, which is a shorter wavelength than the h-line (see FIG. 3). Based on the control signal from the main control system 20, the driving device 21 arranges a wavelength selection filter 6 a that allows only light including the i-line and j-line wavelength ranges in the optical path between the light source 1 and the mask M. To do.

  Next, a microdevice manufacturing method using the projection exposure apparatus according to the second embodiment will be described with reference to the flowchart shown in FIG. In the microdevice manufacturing method according to the second embodiment, a liquid crystal display as a microdevice is formed by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate) P. A method for manufacturing the element will be described. In the microdevice manufacturing method according to the second embodiment, the lower layer pattern is formed on the plate P, and the upper layer pattern is formed on the plate P on which the lower layer pattern is formed. Overlay exposure is performed to form a stack. That is, after exposure of a slightly rough pattern (lower layer exposure) that does not require high resolution, exposure of an ultrafine pattern that requires high resolution (exposure of the upper layer) is performed.

  First, in order to perform exposure with high throughput, exposure is performed in a power mode in which the power of exposure light is emphasized. The main control system 20 outputs a control signal to the driving device 21 so as to perform exposure with light in the wavelength range of h-line and i-line, and drives the driving device 21 to change the wavelength selection filter 6b to the light source 1. It arrange | positions in the optical path between the masks M (step S30). Thereby, the pattern of the mask M is illuminated with illumination light (step S31, illumination process), the image of the pattern of the mask M is projected on the plate P (step S32, projection process), and exposed on the plate P (step S32). Step S33, power exposure step).

  Next, in order to develop the plate P on which the pattern of the mask M is exposed, the plate P is transported to the developing device, and the developing of the plate P is performed in the developing device (step S34, development process). Thereafter, the pattern of the lower layer is formed on the plate P through each process such as an etching process and a resist stripping process. Next, the plate P on which the pattern of the lower layer is formed is transported to the coating apparatus, a new resist is applied in the coating apparatus, and the plate P coated with the new resist is transported from the coating apparatus to the projection exposure apparatus. To do.

  Next, an ultrafine pattern that requires high resolution is exposed in a high resolution mode that does not place importance on the power of exposure light. The main control system 20 switches the wavelength of the illumination light (step S35). That is, the main control system 20 outputs a control signal to the drive device 21 so as to perform exposure with light in the wavelength range of i-line and j-line, and drives the drive device 21 to drive the wavelength selection filter 6b to the light source. The wavelength selection filter 6a is inserted into the optical path between the light source 1 and the mask M by retracting from the optical path between 1 and the mask M to the outside of the optical path (switching step).

  Thereby, the pattern of the mask M is illuminated with illumination light (step S36, illumination process), the image of the pattern of the mask M is projected onto the plate P (step S37, projection process), and exposed on the plate P (step S37). Step S38, high resolution exposure step). Next, in order to develop the plate P on which the pattern of the mask M is exposed in step S38, the plate P is transported to the developing device, and the developing of the plate P is performed in the developing device (step S39, developing process). Thereafter, a predetermined pattern is formed on the plate P through each process such as an etching process and a resist stripping process. And it transfers to a color filter formation process, a cell assembly process, and a module assembly process. The color filter forming process, the cell assembling process, and the module assembling process are the same as the color filter forming process, the cell assembling process, and the module assembling process in the method of manufacturing the microdevice according to the first embodiment, and thus detailed description thereof. Is omitted.

  A liquid crystal display element is formed through a color filter formation process, a cell assembly process, and a module assembly process. According to the above-described manufacturing method of a micro device (liquid crystal display element), it is possible to perform both exposure with an emphasis on high resolution and exposure with an emphasis on high throughput in a state where the chromatic aberration of the projection optical system is well corrected. A good liquid crystal display element can be obtained.

  The development process in step S34 is performed before the exposure in the high resolution mode in which high resolution is emphasized, but is performed after the exposure in the power mode and the exposure in the high resolution mode. May be. That is, the developing process in step S34 may be omitted.

  According to the projection optical system (imaging optical system) according to the second embodiment, an optical member composed of an optical member composed of fluorite (fluoride) and quartz (having dispersion different from fluoride). Chromatic aberration of magnification due to light in the wavelength range of j-line, i-line, and h-line, since the first and second imaging optical systems are provided with four combinations provided adjacent to each other In addition, axial chromatic aberration can be corrected satisfactorily.

  In the projection exposure apparatus according to the second embodiment, since the projection optical system includes the first imaging optical system and the second imaging optical system, the j-line, i-line, and h-line The exposure can be performed in a state where the lateral chromatic aberration and the axial chromatic aberration due to the light in the wavelength range are satisfactorily corrected. That is, both exposure that emphasizes high resolution using illumination light including the j-line and i-line wavelength ranges and exposure that emphasizes high throughput using illumination light including the h-line and i-line wavelength ranges are favorable. Can be done.

  In the second embodiment, the first imaging optical system and the second imaging optical system are provided with the first transmission optical member and the second transmission optical member adjacent to the first transmission optical member. 4 combinations, but it is sufficient to provide at least three. The first transmission optical member is made of fluorite, but may be made of a fluoride other than fluorite, and the second transmission optical member is made of quartz. You may make it comprise with the member which has dispersion | variation different from a fluoride.

  Further, in the projection exposure apparatus according to each of the above-described embodiments, a step-and-scan projection exposure apparatus including a plurality of catadioptric projection optical units is used. However, a step-and-repeat projection exposure apparatus is used. A step-and-scan type projection exposure apparatus including a projection exposure apparatus or a straight cylindrical projection optical unit may be used.

  In the projection exposure apparatus according to each of the above-described embodiments, the wavelength range used as the exposure light is switched by switching the wavelength selection filter, but the light in the wavelength range used as the exposure light is emitted. A plurality of light sources may be provided, and the wavelength band may be switched by switching the light sources.

  Further, in the microdevice manufacturing method according to each of the above-described embodiments, high-resolution exposure is performed in the high-resolution mode after performing power exposure in the power mode. You may make it perform power exposure by power mode after performing exposure.

  In the projection exposure apparatus according to each of the above-described embodiments, a mask on which a desired pattern is formed is used, but a DMD (digital micro device) or a liquid crystal display element display device is used as a mask. Needless to say, a desired pattern displayed on the display device may be exposed on a plate as a photosensitive substrate.

  The lens configuration of the imaging optical system according to Example 1 is the same as the lens configuration of the first imaging optical system K1 according to the first embodiment shown in FIG. In the description of the system, the reference numerals used in the description of the first imaging optical system K1 according to the first embodiment are used.

  In Example 1, j-line (λ = 313 nm), i-line (λ = 365 nm), and h-line (λ = 404 nm) are used as exposure wavelengths. [Table 1] lists the values of the specifications of the projection optical unit PL1 of Example 1. In [Table 1], the first column indicates the surface number, and the surface number advances from the mask M surface which is the object surface (first surface) toward the plate P surface which is the image surface (second surface). The order of the surface from the mask M side along the direction to perform is shown. The second column indicates the radius of curvature (mm) of each surface, and the third column indicates the axial distance between the surfaces, that is, the surface distance (mm). The fourth column shows the refractive index for j-line light, the refractive index for i-line light, and the refractive index for h-line light. The fifth column shows the effective diameter, and the sixth column shows the glass material of the optical member. In [Table 1], the radius of curvature of the convex surface toward the light incident side is positive, and the radius of curvature of the concave surface is negative.

  According to the imaging optical system according to the first example, there are four chromatic aberrations caused by light in the first exposure wavelength region of j-line and i-line and chromatic aberrations caused by light in the second exposure wavelength region of i-line and h-line. It is corrected well by switching the plane parallel plate.

  The lens configuration of the imaging optical system according to Example 2 is the same as the lens configuration of the first imaging optical system K3 according to the second embodiment shown in FIG. In the description of the system, the reference numerals used in the description of the first imaging optical system K3 according to the second embodiment are used.

  In Example 2, j-line (λ = 313 nm), i-line (λ = 365 nm), and h-line (λ = 404 nm) are used as exposure wavelengths. [Table 2] lists the values of the specifications of the projection optical unit of Example 2. In [Table 2], the first column indicates the surface number, and the surface number is the progression of light from the mask M surface, which is the object surface (first surface), toward the plate P surface, which is the image surface (second surface). The order of the surface from the mask M side along the direction to perform is shown. The second column indicates the radius of curvature (mm) of each surface, and the third column indicates the axial distance between the surfaces, that is, the surface distance (mm). The fourth column shows the refractive index for j-line light, the refractive index for i-line light, and the refractive index for h-line light. The fifth column shows the effective diameter, and the sixth column shows the glass material of the optical member. In [Table 2], the radius of curvature of the convex surface toward the light incident side is positive, and the radius of curvature of the concave surface is negative.

  According to the imaging optical system according to Example 2, chromatic aberration due to light in the wavelength range of j-line, i-line, and h-line is well corrected.

It is a perspective view which shows the schematic structure of the whole projection exposure apparatus concerning 1st Embodiment. It is a figure which shows the structure of the illumination optical system concerning 1st Embodiment. It is a graph which shows the light intensity in the wavelength of the light inject | emitted from the light source concerning 1st Embodiment. It is a figure which shows the structure of the projection optical unit concerning 1st Embodiment. It is a figure which shows the system configuration | structure of the projection optical unit concerning 1st Embodiment. It is a flowchart for demonstrating the manufacturing method of the microdevice concerning 1st Embodiment. It is a figure which shows the structure of the projection optical unit concerning 2nd Embodiment. It is a flowchart for demonstrating the manufacturing method of the microdevice concerning 2nd Embodiment.

Explanation of symbols

M ... Mask, MS ... Mask stage, P ... Plate, 20 ... Main control system, 19, 21 ... Drive device, 40, 42, 44, 46, 50, 52, 54, 56 ... Parallel plane plate, PL ... Projection optics System, PL1, PL3 to PL5 ... projection optical unit, K1, K3 ... first imaging optical system, K2, K4 ... second imaging optical system, FS, FS2 ... field stop.

Claims (11)

In an imaging optical system that forms an image of the first surface on the second surface,
At least three combinations of a first transmission optical member made of fluoride and a second transmission optical member having dispersion different from that of the first transmission optical member provided adjacent to the first transmission optical member. An imaging optical system comprising:   The imaging optical system according to claim 1, wherein the second transmission optical member is made of quartz. An illumination optical system for illuminating the mask pattern with illumination light;
In an exposure apparatus comprising a projection optical system for projecting the mask pattern onto a photosensitive substrate,
The projection optical system includes the imaging optical system according to claim 1 or 2.
The image forming optical system projects the pattern image of the mask set on the first surface onto the photosensitive substrate set on the second surface. Changing means for changing a correction range of chromatic aberration of the projection optical system;
4. The exposure apparatus according to claim 3, wherein the changing unit is detachably disposed in an optical path between the first surface and the second surface. An illumination optical system for illuminating the pattern of the mask disposed on the first surface with the illumination light having a wavelength switched by a switching means for switching the wavelength of the illumination light;
In an exposure apparatus comprising: a projection optical system that projects an image of the mask pattern onto a photosensitive substrate disposed on a second surface;
Changing means for changing a correction range of chromatic aberration of the projection optical system;
An exposure apparatus characterized in that the changing means is configured to be detachable in an optical path between the first surface and the second surface in accordance with switching of the wavelength of the illumination light by the switching means. .   6. The exposure apparatus according to claim 5, wherein exposure is performed in a power mode for performing power-oriented exposure or a high-resolution mode for performing high-resolution-oriented exposure by switching the wavelength of the illumination light by the switching means. . An exposure step of exposing the pattern of the mask onto the photosensitive substrate;
And a development step of developing the photosensitive substrate exposed by the exposure step, comprising:
The method of manufacturing a micro device, wherein the exposure step uses the exposure apparatus according to any one of claims 1 to 6. A method for manufacturing a microdevice, comprising: an exposure step of exposing a pattern of a mask on a photosensitive substrate using a projection optical system; and a development step of developing the photosensitive substrate exposed by the exposure step,
The exposure step includes
A switching step for switching the wavelength of the illumination light;
A changing step of changing a correction range of chromatic aberration of the projection optical system in accordance with switching of the wavelength of illumination light by the switching step;
An illumination step of illuminating the mask pattern with illumination light;
Projecting a pattern of the mask onto a photosensitive substrate;
A method for manufacturing a microdevice, comprising:   2. The exposure process according to claim 1, wherein the exposure is performed in a power mode for performing power-oriented exposure or a high-resolution mode for performing high-resolution-oriented exposure by switching the wavelength of the illumination light in the switching process. 9. A method for producing a microdevice according to 8. In a manufacturing method of a microdevice including an exposure step of exposing a pattern of a mask on a photosensitive substrate, and a development step of developing the photosensitive substrate exposed by the exposure step,
The exposure process includes a power exposure process for performing power-oriented exposure by switching the wavelength of illumination light, and a high-resolution exposure process for performing exposure with high resolution by switching the wavelength of illumination light. A method for manufacturing a microdevice, comprising: One of the power exposure step and the high-resolution exposure step is executed before executing the developing step, and the other of the power exposure step and the high-resolution exposure step executes the developing step. The method of manufacturing a microdevice according to claim 10, wherein the method is performed after the operation.

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