TW202038391A - Package stack structure, manufacturing method and carrier module thereof - Google Patents

Package stack structure, manufacturing method and carrier module thereof Download PDF

Info

Publication number
TW202038391A
TW202038391A TW108115893A TW108115893A TW202038391A TW 202038391 A TW202038391 A TW 202038391A TW 108115893 A TW108115893 A TW 108115893A TW 108115893 A TW108115893 A TW 108115893A TW 202038391 A TW202038391 A TW 202038391A
Authority
TW
Taiwan
Prior art keywords
organic material
circuit
material substrate
substrate
stack structure
Prior art date
Application number
TW108115893A
Other languages
Chinese (zh)
Other versions
TWI778260B (en
Inventor
江東昇
高迺澔
林志生
陳思先
施智元
陳嘉成
白裕呈
米軒皞
Original Assignee
矽品精密工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 矽品精密工業股份有限公司 filed Critical 矽品精密工業股份有限公司
Priority to CN201910492840.7A priority Critical patent/CN111799242A/en
Priority to US16/538,286 priority patent/US20200328142A1/en
Publication of TW202038391A publication Critical patent/TW202038391A/en
Application granted granted Critical
Publication of TWI778260B publication Critical patent/TWI778260B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Led Device Packages (AREA)

Abstract

This invention provides a package stack structure and manufacturing method thereof, which disposes an electronic component on the uppermost side of a plurality of organic material substrates, and the other organic material substrates are not disposed any wafers, so that the circuit layers of the predetermined number of layers are respectively disposed in the organic substrates to disperse heat by the organic material substrates, such that the problem of separation between the lowermost organic substrate and the circuit board due to CTE mismatch can be avoided.

Description

封裝堆疊結構及其製法與載板組件 Package stack structure and its manufacturing method and carrier board assembly

本發明係關於一種封裝製程,特別是關於一種封裝堆疊結構及其製法與載板組件。 The present invention relates to a packaging process, in particular to a packaging stack structure and its manufacturing method and carrier assembly.

隨著近年來可攜式電子產品的蓬勃發展,各類相關產品亦逐漸朝向高密度、高性能以及輕、薄、短、小之趨勢發展。 With the vigorous development of portable electronic products in recent years, various related products have gradually developed toward the trend of high density, high performance, and light, thin, short, and small.

如第1圖所示,係為習知電子裝置1的剖視示意圖。該電子裝置1包括一如電路板之母板1b及安裝於該母板1b上之電子封裝件1a。該電子封裝件1a係包含一封裝基板11、利用複數導電凸塊100覆晶結合該封裝基板11之半導體晶片10、及固定該半導體晶片10且包覆該些導電凸塊100之底膠12。該電子封裝件1a之封裝基板11係以複數銲球13接置於該母板1b上。 As shown in FIG. 1, it is a schematic cross-sectional view of the conventional electronic device 1. The electronic device 1 includes a motherboard 1b like a circuit board and an electronic package 1a mounted on the motherboard 1b. The electronic package 1a includes a packaging substrate 11, a semiconductor chip 10 using a plurality of conductive bumps 100 to flip-chip the packaging substrate 11, and a primer 12 for fixing the semiconductor chip 10 and covering the conductive bumps 100. The packaging substrate 11 of the electronic package 1a is connected to the motherboard 1b with a plurality of solder balls 13.

於半導體技術的發展中,因覆晶封裝製程中之半導體晶片10(或該電子封裝件1a)之尺寸係有愈來愈大的趨勢,因而造成該半導體晶片10於封裝後會因應力集中而在各角落形成的晶片角落應力(Die Corner Stress)也愈來愈高,致使其與該底膠12之間會產生強大的應力,如第1圖所示之虛線圓圈處,導致該半導體晶片10會沿角落處發生破裂(Crack)。為解決此問題,業界一般使用超低(Ultra low)熱膨脹係數(Coefficient of Thermal Expansion,簡稱CTE)之絕 緣基材作為該封裝基板11之板體,如銅箔複合材(copper clad laminate,簡稱CCL)、ABF(Ajinomoto Build-up Film)、預浸材(Prepreg,簡稱PP)、防焊層(Solder Mask,簡稱SM)等之選材,以降低晶片角落應力(Die Corner Stress)。 In the development of semiconductor technology, the size of the semiconductor chip 10 (or the electronic package 1a) in the flip-chip packaging process tends to be larger and larger, which results in the semiconductor chip 10 being subjected to stress concentration after packaging. The die corner stress (Die Corner Stress) formed at each corner is also getting higher and higher, causing a strong stress to be generated between it and the primer 12. As shown in the dotted circle in Figure 1, the semiconductor chip 10 Cracks will occur along the corners. To solve this problem, the industry generally uses Ultra low Coefficient of Thermal Expansion (CTE) absolute The edge substrate is used as the board body of the package substrate 11, such as copper clad laminate (CCL), ABF (Ajinomoto Build-up Film), Prepreg (PP), solder mask (Solder Mask, referred to as SM) and other materials to reduce the die corner stress (Die Corner Stress).

惟,習知電子裝置1中,該母板1b的板材的CTE並未配合該封裝基板11變小,造成該封裝基板11與該母板1b之間因CTE不匹配(mismatch)而相分離,進而存在該銲球13之連接可靠度(Reliability)之問題,造成該封裝基板11無法有效電性連接該母板1b(如斷路)或無法通過可靠度測試(如未完全接合),致使產品之良率不佳。 However, in the conventional electronic device 1, the CTE of the board of the motherboard 1b does not match the package substrate 11 and becomes smaller, resulting in separation between the package substrate 11 and the motherboard 1b due to CTE mismatch. Furthermore, there is a problem of the reliability of the solder ball 13, causing the package substrate 11 to be unable to effectively electrically connect to the motherboard 1b (e.g. open circuit) or fail the reliability test (e.g. not fully bonded). The yield rate is poor.

再者,因該封裝基板11之尺寸會依據晶片數量需求增加而愈來愈大,且其層數亦愈來愈高,故該封裝基板11之製程良率也隨之降低(即層數越多,誤差越大),因而造成該封裝基板11之製作成本遽增。例如,以十層線路層之封裝基板11為例,每一層之線路層之製作良率約為95%,則十層之線路層之封裝基板11之良率則為59.8%(即0.9510),故以現有製程難以完成該封裝基板11之製作,恐需重新規劃製程,因而大幅增加製程難度。 Furthermore, because the size of the package substrate 11 will be larger and larger according to the increase in the number of chips, and the number of layers will also be higher, so the process yield of the package substrate 11 will also decrease (that is, the more the number of layers The greater the error, the greater the error), which causes the manufacturing cost of the package substrate 11 to increase dramatically. For example, taking the packaging substrate 11 with ten circuit layers as an example, the production yield of each circuit layer is about 95%, and the yield of the packaging substrate 11 with ten circuit layers is 59.8% (ie 0.95 10 ) Therefore, it is difficult to complete the production of the package substrate 11 with the existing manufacturing process, and the manufacturing process may need to be re-planned, thus greatly increasing the difficulty of the manufacturing process.

因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the various problems of the above-mentioned conventional technology has become an urgent problem to be solved at present.

鑑於上述習知技術之缺失,本發明係提供一種封裝堆疊結構,係包括:至少一電子元件;以及一具有複數線路層之載板組件,係包含有一具有第一線路部之第一有機材基板以及至少一具有第二線路部之第二有機材基板,且該第一有機材基板藉由複數支撐體堆疊於該第二有機材基板上,其中,用以 電性連接該電子元件之該複數線路層之層數係分配於該第一線路部及該第二線路部中,且該電子元件接置於該第一有機材基板上並電性連接該複數線路層。 In view of the above-mentioned deficiencies in the prior art, the present invention provides a package stack structure, which includes: at least one electronic component; and a carrier assembly with a plurality of circuit layers, including a first organic substrate with a first circuit portion And at least one second organic material substrate with a second circuit portion, and the first organic material substrate is stacked on the second organic material substrate by a plurality of supports, wherein The number of layers of the plurality of circuit layers that are electrically connected to the electronic component is distributed among the first circuit portion and the second circuit portion, and the electronic component is connected to the first organic substrate and electrically connected to the plurality Line layer.

本發明復提供一種封裝堆疊結構之製法,係包括:提供一具有第一線路部之第一有機材基板及至少一具有第二線路部之第二有機材基板;接置至少一電子元件於該第一有機材基板上;以及將該第一有機材基板藉由複數支撐體堆疊於該第二有機材基板上,以構成具有複數線路層之載板組件,並令該電子元件電性連接該複數線路層,其中,用以電性連接該電子元件之該複數線路層之層數係分配於該第一線路部及該第二線路部中。 The present invention further provides a method for manufacturing a package stack structure, which includes: providing a first organic substrate with a first circuit portion and at least one second organic substrate with a second circuit portion; connecting at least one electronic component to the And stacking the first organic material substrate on the second organic material substrate through a plurality of supports to form a carrier assembly with a plurality of circuit layers, and the electronic component is electrically connected to the A plurality of circuit layers, wherein the number of layers of the plurality of circuit layers used to electrically connect the electronic component is allocated to the first circuit part and the second circuit part.

前述之封裝堆疊結構及其製法中,該第一線路部之線路層之層數係不同於該第二線路部之線路層之層數。 In the aforementioned package stack structure and its manufacturing method, the number of circuit layers of the first circuit portion is different from the number of circuit layers of the second circuit portion.

前述之封裝堆疊結構及其製法中,該第一線路部之線路層之層數係相同於該第二線路部之線路層之層數。 In the aforementioned package stack structure and its manufacturing method, the number of circuit layers of the first circuit portion is the same as the number of circuit layers of the second circuit portion.

前述之封裝堆疊結構及其製法中,復包括設置散熱件於該第一有機材基板上。 In the aforementioned package stack structure and its manufacturing method, it further includes disposing a heat sink on the first organic substrate.

前述之封裝堆疊結構及其製法中,該第一有機材基板係與複數該第二有機材基板相堆疊,且各該第二有機材基板之間係藉由複數支撐件相堆疊。 In the aforementioned package stack structure and its manufacturing method, the first organic material substrate is stacked with a plurality of the second organic material substrates, and each of the second organic material substrates is stacked by a plurality of supports.

前述之封裝堆疊結構及其製法中,該支撐體係電性連接該第一有機材基板與第二有機材基板。 In the aforementioned package stack structure and its manufacturing method, the support system is electrically connected to the first organic material substrate and the second organic material substrate.

前述之封裝堆疊結構及其製法中,復包括將該第二有機材基板藉由複數導電元件堆疊於一電路板上。例如,該導電元件係電性連接該電路板與該第二有機材基板,且該第二有機材基板之熱膨脹係數介於該電路板之熱膨脹係數與該第一有機材基板之熱膨脹係數之間。另外,該第二有機材基板之熱膨脹係數不同於該電路板之熱膨脹係數。 The aforementioned package stack structure and its manufacturing method further include stacking the second organic material substrate on a circuit board through a plurality of conductive elements. For example, the conductive element is electrically connected to the circuit board and the second organic substrate, and the thermal expansion coefficient of the second organic substrate is between the thermal expansion coefficient of the circuit board and the thermal expansion coefficient of the first organic substrate . In addition, the thermal expansion coefficient of the second organic substrate is different from the thermal expansion coefficient of the circuit board.

前述之封裝堆疊結構及其製法中,該第一有機材基板之熱膨脹係數不同於該第二有機材基板之熱膨脹係數。 In the aforementioned package stack structure and its manufacturing method, the thermal expansion coefficient of the first organic substrate is different from the thermal expansion coefficient of the second organic substrate.

本發明另提供一種載板組件,其配置有複數線路層,該載板組件係包括:第一有機材基板,係具有第一線路部;以及第二有機材基板,係具有第二線路部,且該第一有機材基板藉由複數支撐體堆疊於該第二有機材基板上,其中,該複數線路層之層數係分配於該第一線路部及該第二線路部中。 The present invention also provides a carrier board assembly configured with a plurality of circuit layers. The carrier board assembly includes: a first organic material substrate having a first circuit portion; and a second organic material substrate having a second circuit portion, And the first organic material substrate is stacked on the second organic material substrate by a plurality of supports, wherein the number of layers of the plurality of circuit layers is distributed among the first circuit part and the second circuit part.

前述之載板組件中,該第一線路部之線路層之層數係不同於該第二線路部之線路層之層數。 In the aforementioned carrier board assembly, the number of circuit layers of the first circuit portion is different from the number of circuit layers of the second circuit portion.

前述之載板組件中,該第一線路部之線路層之層數係相同於該第二線路部之線路層之層數。 In the aforementioned carrier board assembly, the number of circuit layers of the first circuit portion is the same as the number of circuit layers of the second circuit portion.

前述之載板組件中,該第一有機材基板係與複數該第二有機材基板相堆疊,且各該第二有機材基板之間係藉由複數支撐件相堆疊。進一步,復包括形成於各該第二有機材基板之間的包覆層,其包覆該複數支撐件。 In the aforementioned carrier assembly, the first organic material substrate is stacked with a plurality of the second organic material substrates, and each of the second organic material substrates is stacked by a plurality of supports. Further, the compound includes a coating layer formed between each of the second organic material substrates, which covers the plurality of support members.

前述之載板組件中,該支撐體係電性連接該第一有機材基板與第二有機材基板。 In the aforementioned carrier assembly, the support system is electrically connected to the first organic material substrate and the second organic material substrate.

前述之載板組件中,該第一有機材基板之熱膨脹係數不同於該第二有機材基板之熱膨脹係數。 In the aforementioned carrier assembly, the thermal expansion coefficient of the first organic material substrate is different from the thermal expansion coefficient of the second organic material substrate.

前述之載板組件中,復包括包覆該複數支撐體的包覆層。 The aforementioned carrier assembly includes a coating layer covering the plurality of supports.

由上可知,本發明之封裝堆疊結構及其製法與載板組件中,主要藉由將預計層數之線路層分別佈設於該第一與第二有機材基板中,故相較於習知技術,本發明可藉由該第二有機材基板分散熱應力,以避免該第一有機材基板與該電路板之間因CTE不匹配而相分離之問題,令該第二有機材基板能有效電性連接該電路板或能通過可靠度測試,進而提高產品之良率。 It can be seen from the above that, in the package stack structure and its manufacturing method and carrier assembly of the present invention, the expected number of circuit layers are respectively arranged in the first and second organic substrates, which is compared with the conventional technology. In the present invention, the second organic material substrate can disperse thermal stress to avoid the problem of phase separation between the first organic material substrate and the circuit board due to CTE mismatch, so that the second organic material substrate can effectively The circuit board may be able to pass the reliability test if it is connected to the circuit board, thereby increasing the yield of the product.

再者,即使線路層之層數愈來愈高,仍可藉由將預計層數之線路層分別佈設於該第一與第二有機材基板中,以提升製程良率,故能有效降低製作成本。 Furthermore, even if the number of circuit layers is getting higher and higher, the expected number of circuit layers can still be laid on the first and second organic substrates respectively to increase the process yield and effectively reduce the production cost.

又,藉由該第一與第二有機材基板之CTE不相同,以令該封裝堆疊結構之CTE逐步變化,而避免該封裝堆疊結構因熱應力變化過大而發生翹曲之問題。 In addition, the CTE of the first and second organic substrates is different, so that the CTE of the package stack structure is gradually changed, and the problem of warping of the package stack structure due to excessive thermal stress changes is avoided.

1‧‧‧電子裝置 1‧‧‧Electronic device

1a‧‧‧電子封裝件 1a‧‧‧Electronic package

1b‧‧‧母板 1b‧‧‧Motherboard

10‧‧‧半導體晶片 10‧‧‧Semiconductor chip

100‧‧‧導電凸塊 100‧‧‧Conductive bump

11‧‧‧封裝基板 11‧‧‧Packaging substrate

12,202‧‧‧底膠 12,202‧‧‧ Primer

13‧‧‧銲球 13‧‧‧Solder ball

2,3‧‧‧封裝堆疊結構 2,3‧‧‧Package stack structure

2a,3a,4a,4b‧‧‧載板組件 2a, 3a, 4a, 4b‧‧‧Carrier board assembly

20‧‧‧電子元件 20‧‧‧Electronic components

20a‧‧‧作用面 20a‧‧‧working surface

20b‧‧‧非作用面 20b‧‧‧Inactive surface

200‧‧‧電極墊 200‧‧‧electrode pad

201‧‧‧導電凸塊 201‧‧‧Conductive bump

21‧‧‧第一有機材基板 21‧‧‧The first organic substrate

21a‧‧‧第一表面 21a‧‧‧First surface

21b‧‧‧第二表面 21b‧‧‧Second surface

21’‧‧‧第一線路部 21’‧‧‧First Circuit Department

210‧‧‧第一絕緣層 210‧‧‧First insulation layer

211‧‧‧第一線路層 211‧‧‧First circuit layer

22‧‧‧第二有機材基板 22‧‧‧Second organic substrate

22a‧‧‧第一側 22a‧‧‧First side

22b‧‧‧第二側 22b‧‧‧Second side

22’‧‧‧第二線路部 22’‧‧‧Second Circuit Department

220‧‧‧第二絕緣層 220‧‧‧Second insulating layer

221‧‧‧第二線路層 221‧‧‧Second circuit layer

23‧‧‧散熱件 23‧‧‧Radiator

23a‧‧‧結合層 23a‧‧‧Combination layer

23b‧‧‧黏著層 23b‧‧‧Adhesive layer

230‧‧‧片體 230‧‧‧sheet

231‧‧‧腳部 231‧‧‧Foot

24‧‧‧支撐體 24‧‧‧Support

25‧‧‧導電元件 25‧‧‧Conductive element

26‧‧‧電路板 26‧‧‧Circuit board

30‧‧‧支撐件 30‧‧‧Support

40‧‧‧包覆層 40‧‧‧Coating

S‧‧‧空曠空間 S‧‧‧Empty Space

第1圖係為習知電子裝置之剖面示意圖。 Figure 1 is a schematic cross-sectional view of a conventional electronic device.

第2A至2E圖係為本發明之封裝堆疊結構之製法之剖面示意圖。 2A to 2E are schematic cross-sectional views of the manufacturing method of the package stack structure of the present invention.

第3圖係為本發明之封裝堆疊結構之另一實施例之剖面示意圖。 FIG. 3 is a schematic cross-sectional view of another embodiment of the package stack structure of the present invention.

第4A及4B圖係為本發明之載板組件之不同實施例之剖面示意圖。 4A and 4B are schematic cross-sectional views of different embodiments of the carrier assembly of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific examples illustrate the implementation of the present invention. Those familiar with the art can easily understand the other advantages and effects of the present invention from the contents disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“第一”、“第二”、及“一”等之用語,亦僅為便於敘述 之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this manual are only used to match the contents disclosed in the manual for the understanding and reading of those familiar with the art, and are not intended to limit the implementation of the present invention Therefore, it does not have any technical significance. Any structural modification, proportional relationship change, or size adjustment should still fall within the scope of the present invention without affecting the effects and objectives that can be achieved. The technical content disclosed by the invention can be covered. At the same time, terms such as "first", "second", and "one" cited in this specification are only for ease of description It is clear that it is not used to limit the scope of implementation of the present invention, and the change or adjustment of the relative relationship shall be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

第2A至2E圖係為本發明之封裝堆疊結構2之製法之剖面示意圖。 2A to 2E are schematic cross-sectional views of the manufacturing method of the package stack structure 2 of the present invention.

如第2A圖所示,提供一具有第一線路部21’之第一有機材基板21。 As shown in Fig. 2A, a first organic substrate 21 having a first circuit portion 21' is provided.

於本實施例中,該第一有機材基板21係為具有核心層或無核心層(coreless)之線路結構,如封裝基板(substrate),其定義有相對之第一表面21a與第二表面21b,且該第一線路部21’係包含至少一第一絕緣層210與設於該第一絕緣層210上之第一線路層211。例如,以線路重佈層(redistribution layer,簡稱RDL)方式形成扇出(fan out)型第一線路層211,其材質係為銅,且形成該第一絕緣層210之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材或如綠漆、石墨之防銲材。 In this embodiment, the first organic substrate 21 is a circuit structure with a core layer or a coreless layer, such as a package substrate, which defines a first surface 21a and a second surface 21b opposite to each other. And the first circuit portion 21 ′ includes at least one first insulating layer 210 and a first circuit layer 211 disposed on the first insulating layer 210. For example, a fan-out first circuit layer 211 is formed by a redistribution layer (RDL) method, the material of which is copper, and the material for forming the first insulating layer 210 is such as Diazobenzene (Polybenzoxazole, PBO for short), Polyimide (PI for short), Prepreg (PP for short) and other dielectric materials or solder resist materials such as green paint and graphite.

如第2B圖所示,接置至少一電子元件20於該第一有機材基板21上,且令該電子元件20電性連接該第一線路部21’之第一線路層211。 As shown in FIG. 2B, at least one electronic component 20 is connected to the first organic substrate 21, and the electronic component 20 is electrically connected to the first circuit layer 211 of the first circuit portion 21'.

於本實施例中,該電子元件20例如為封裝件、主動元件、被動元件或其三者組合等,其中,該封裝件係例如晶片級封裝(Chip Scale Package,簡稱CSP),該主動元件係例如半導體晶片,該被動元件係例如電阻、電容及電感。於本實施例中,該電子元件20係為主動元件,其具有相對之作用面20a與非作用面20b,該作用面20a具有複數電極墊200,使該些電極墊200藉由複數如銲錫材料之導電凸塊201以覆晶方式設於該第一有機材基板21之第一表面21a上且電性連接該第一線路層211,並以底膠202包覆該些導電凸塊201;或者,該電子元件20可以其非作用面20b設於該第一有機材基板21之第一表面21a上且該些電極墊200藉由複數銲線(圖略)以打線方式電性連接該第一線路層211;亦或,該電子元 件20可直接接觸該第一線路層211以電性連接該第一線路層211。然而,有關該電子元件20電性連接該第一有機材基板21之方式不限於上述。 In this embodiment, the electronic component 20 is, for example, a package, an active component, a passive component, or a combination of the three, etc., wherein the package is, for example, a Chip Scale Package (CSP), and the active component is For example, semiconductor chips, the passive components are resistors, capacitors, and inductors. In this embodiment, the electronic component 20 is an active component, which has an active surface 20a and a non-active surface 20b opposite to each other. The active surface 20a has a plurality of electrode pads 200, so that the electrode pads 200 are made of a plurality of materials such as solder. The conductive bumps 201 are arranged on the first surface 21a of the first organic substrate 21 in a flip-chip manner and are electrically connected to the first circuit layer 211, and the conductive bumps 201 are covered with a primer 202; or The electronic component 20 may have its non-acting surface 20b disposed on the first surface 21a of the first organic material substrate 21, and the electrode pads 200 may be electrically connected to the first surface 21a by a plurality of bonding wires (not shown). Circuit layer 211; or, the electronic element The component 20 can directly contact the first circuit layer 211 to electrically connect to the first circuit layer 211. However, the manner in which the electronic component 20 is electrically connected to the first organic substrate 21 is not limited to the above.

再者,有關該電子元件20之配置方式繁多,如設於該第一有機材基板21之第二表面21b,並無特別限制。 Furthermore, there are many ways of disposing the electronic component 20, such as being arranged on the second surface 21b of the first organic substrate 21, there is no particular limitation.

如第2C圖所示,可選擇性設置一散熱件23於該第一有機材基板21之第一表面21a上。 As shown in FIG. 2C, a heat dissipation element 23 can be selectively disposed on the first surface 21a of the first organic substrate 21.

於本實施例中,該散熱件23係為金屬構造並包含有片體230及腳部231,且以其片體230藉由結合層23a結合於該電子元件20之非作用面20b上,並使該散熱件23之腳部231藉由黏著層23b架設於該第一有機材基板21之第一表面21a(或第一線路層211)上。例如,該結合層23a係為導熱介面材(Thermal Interface Material,簡稱TIM)、導熱膠或其它適當材質,且該黏著層23b係為絕緣膠、導電膠或其它適當材質等。 In this embodiment, the heat sink 23 is a metal structure and includes a sheet 230 and a leg portion 231, and the sheet 230 is bonded to the non-active surface 20b of the electronic component 20 through a bonding layer 23a, and The legs 231 of the heat sink 23 are erected on the first surface 21a (or the first circuit layer 211) of the first organic substrate 21 via the adhesive layer 23b. For example, the bonding layer 23a is made of thermal interface material (Thermal Interface Material, TIM), thermally conductive glue or other suitable materials, and the adhesive layer 23b is made of insulating glue, conductive glue or other suitable materials.

如第2D圖所示,將該第一有機材基板21藉由複數支撐體24堆疊於至少一具有第二線路部22’之第二有機材基板22上,且該第二有機材基板22未接置有晶片,並使該第一與第二有機材基板21,22之間呈現有空曠空間S。 As shown in FIG. 2D, the first organic material substrate 21 is stacked on at least one second organic material substrate 22 having a second circuit portion 22' through a plurality of supports 24, and the second organic material substrate 22 is not The wafer is connected, and an empty space S is presented between the first and second organic substrates 21 and 22.

於本實施例中,該第二有機材基板22係為具有核心層或無核心層(coreless)之線路結構,如封裝基板(substrate),其定義有相對之第一側22a與第二側22b,以令該第一有機材基板21以其第二表面21b堆疊於該第二有機材基板22之第一側22a上,且該第二線路部22’係包含至少一第二絕緣層220與設於該第二絕緣層220上之第二線路層221。例如,以線路重佈層(redistribution layer,簡稱RDL)方式形成扇出(fan out)型第二線路層221,其材質係為銅,且形成該第二絕緣層220之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材或如綠漆、石墨之防銲材。 In this embodiment, the second organic material substrate 22 is a circuit structure with a core layer or a coreless layer, such as a package substrate, which defines a first side 22a and a second side 22b opposite to each other. , So that the first organic material substrate 21 is stacked on the first side 22a of the second organic material substrate 22 with its second surface 21b, and the second circuit portion 22' includes at least a second insulating layer 220 and The second circuit layer 221 is provided on the second insulating layer 220. For example, a fan-out type second circuit layer 221 is formed by a redistribution layer (RDL) method, the material of which is copper, and the material for forming the second insulating layer 220 is such as Diazobenzene (Polybenzoxazole, PBO for short), Polyimide (PI for short), Prepreg (PP for short) and other dielectric materials or solder resist materials such as green paint and graphite.

再者,該第一有機材基板21之熱膨脹係數(Coefficient of Thermal Expansion,簡稱CTE)不同於(如小於)該第二有機材基板22之熱膨脹係數。例如,當該第一線路部21’之第一線路層211之層數相同於該第二線路部22’之第二線路層221之層數時,藉由形成該第一絕緣層210之材質不同於形成該第二絕緣層220之材質,以令該第一有機材基板21之熱膨脹係數不同於該第二有機材基板22之熱膨脹係數。 Furthermore, the coefficient of thermal expansion (CTE) of the first organic material substrate 21 is different (eg, smaller than) the coefficient of thermal expansion of the second organic material substrate 22. For example, when the number of layers of the first circuit layer 211 of the first circuit portion 21' is the same as the number of layers of the second circuit layer 221 of the second circuit portion 22', by forming the material of the first insulating layer 210 Different from the material used to form the second insulating layer 220, the thermal expansion coefficient of the first organic substrate 21 is different from the thermal expansion coefficient of the second organic substrate 22.

或者,當形成該第一絕緣層210之材質相同於形成該第二絕緣層220之材質時,藉由該第一線路部21’之第一線路層211(或該第一絕緣層210)之層數不同於該第二線路部22’之第二線路層221(或該第二絕緣層220)之層數,以令該第一有機材基板21之熱膨脹係數不同於該第二有機材基板22之熱膨脹係數。 Alternatively, when the material for forming the first insulating layer 210 is the same as the material for forming the second insulating layer 220, the first circuit layer 211 (or the first insulating layer 210) of the first circuit portion 21' The number of layers is different from that of the second circuit layer 221 (or the second insulating layer 220) of the second circuit portion 22', so that the thermal expansion coefficient of the first organic substrate 21 is different from that of the second organic substrate The coefficient of thermal expansion of 22.

另外,該支撐體24係為銲球(solder ball)、銅核心球或如銅材或金材等之金屬件(如柱狀、塊狀或針狀)等,其電性連接該第一與第二有機材基板21,22。 In addition, the support 24 is a solder ball, a copper core ball, or a metal piece such as copper or gold (such as column, block, or needle), etc., which are electrically connected to the first and The second organic substrate 21, 22.

如第2E圖所示,將該第二有機材基板22以其第二側22b藉由複數導電元件25接置於一電路板26上。 As shown in FIG. 2E, the second organic substrate 22 with its second side 22b is connected to a circuit board 26 via a plurality of conductive elements 25.

於本實施例中,該電路板26之絕緣板體之材質係不同於該第一與第二絕緣層210,220之材質,且該第二有機材基板22之熱膨脹係數不同於(如小於)該電路板26之熱膨脹係數。 In this embodiment, the material of the insulating body of the circuit board 26 is different from the materials of the first and second insulating layers 210, 220, and the thermal expansion coefficient of the second organic material substrate 22 is different from (for example, smaller than) the circuit Coefficient of thermal expansion of plate 26.

再者,該導電元件25係為銲球(solder ball)、銅核心球或如銅材或金材等之金屬件(如柱狀、塊狀或針狀)等,其電性連接該電路板26與該第二有機材基板22。 Furthermore, the conductive element 25 is a solder ball, a copper core ball, or a metal piece such as copper or gold (such as column, block, or needle), etc., which are electrically connected to the circuit board 26 and the second organic substrate 22.

本發明之製法主要藉由將預計層數之線路層分別佈設於該第一有機材基板21與第二有機材基板22中,再將第一有機材基板21與第二有機材基 板22以組合方式(如堆疊)構成所需線路層數量之載板組件2a,且該第一有機材基板21與第二有機材基板22之CTE不相同,故相較於習知技術,本發明之製法於該電路板26之CTE維持不變之情況下,可藉由該第二有機材基板22緩衝該載板組件2a之整體熱膨脹變形量,以避免該載板組件2a與該電路板26之間因CTE不匹配而相分離之問題,即避免該導電元件25之連接可靠度之問題,因而該第二有機材基板22能有效電性連接該電路板26或該載板組件2a能通過可靠度測試,進而提高產品之良率。 The manufacturing method of the present invention is mainly by arranging the expected number of circuit layers on the first organic material substrate 21 and the second organic material substrate 22, and then the first organic material substrate 21 and the second organic material substrate The boards 22 are combined (eg stacked) to form the carrier assembly 2a with the required number of circuit layers, and the CTEs of the first organic material substrate 21 and the second organic material substrate 22 are different, so compared to the prior art, the The manufacturing method of the invention can buffer the overall thermal expansion and deformation of the carrier assembly 2a by the second organic material substrate 22 when the CTE of the circuit board 26 remains unchanged, so as to avoid the carrier assembly 2a and the circuit board. The problem of the separation between the 26 due to the CTE mismatch, that is, the problem of the connection reliability of the conductive element 25 is avoided, so the second organic substrate 22 can effectively electrically connect the circuit board 26 or the carrier board assembly 2a. Pass the reliability test to improve the yield of the product.

再者,即使該載板組件2a之尺寸依據晶片數量需求增加而愈來愈大,致使其線路層之層數愈來愈高,仍可藉由將預計層數之線路層(第一與第二線路層211,221)分別佈設於該第一與第二有機材基板21,22中,以提升該載板組件2a之製程良率,故能有效降低該載板組件2a之製作成本。 Furthermore, even if the size of the carrier assembly 2a becomes larger and larger in accordance with the increase in the number of chips required, resulting in higher and higher circuit layers, the expected number of circuit layers (first and second The two circuit layers 211, 221) are respectively arranged in the first and second organic material substrates 21, 22 to improve the process yield of the carrier assembly 2a, and thus can effectively reduce the manufacturing cost of the carrier assembly 2a.

例如,以十層線路層之載板組件2a為例,可將七層之第一線路層211配置於該第一有機材基板21,而將三層之第二線路層221配置於該第二有機材基板22,若每一層之線路層之製作良率約為95%,則該第一有機材基板21之良率為68.8%(即0.957),而該第二有機材基板22之良率為85.7%(即0.953),故以現有製程即可完成該載板組件2a之製作,因而大幅降低製程成本。 For example, taking the carrier assembly 2a with ten circuit layers as an example, the first circuit layer 211 of seven layers can be arranged on the first organic substrate 21, and the second circuit layer 221 of three layers can be arranged on the second organic substrate 22, if the production yield of each layer of the wiring layer is about 95%, the yield of the first organic material of the substrate 21 was 68.8% (i.e. 0.95 7), and the second substrate 22 of the organic material good The rate is 85.7% (ie, 0.95 3 ), so the carrier assembly 2a can be manufactured by the existing manufacturing process, thus greatly reducing the manufacturing cost.

應可理解地,亦可將六層之第一線路層211配置於該第一有機材基板21,而將四層之第二線路層221配置於該第二有機材基板22;或者,可將五層之第一線路層211配置於該第一有機材基板21,而將五層之第二線路層221配置於該第二有機材基板22。因此,有關線路層之層數可依需求配置於該第一與第二有機材基板21,22中。 It should be understood that the six-layer first circuit layer 211 can also be arranged on the first organic material substrate 21, and the four-layer second circuit layer 221 can be arranged on the second organic material substrate 22; alternatively, the The five-layer first circuit layer 211 is disposed on the first organic material substrate 21, and the five-layer second circuit layer 221 is disposed on the second organic material substrate 22. Therefore, the number of related circuit layers can be arranged in the first and second organic substrates 21, 22 according to requirements.

又,於該封裝堆疊結構2中,各板結構之排設可依CTE之大小依序,如由上而下依序為第一有機材基板21(CTE最小)、第二有機材基板22(CTE 介於第一有機材基板與電路板之間)及電路板26(CTE最大),以令CTE由上往下逐步變化,而避免因熱應力變化過大而發生翹曲之問題。 Moreover, in the package stack structure 2, the arrangement of the board structures can be in order according to the size of the CTE, such as the first organic material substrate 21 (the smallest CTE) and the second organic material substrate 22 (from top to bottom) CTE Between the first organic substrate and the circuit board) and the circuit board 26 (maximum CTE), so that the CTE gradually changes from top to bottom, so as to avoid the problem of warping due to excessive thermal stress changes.

於另一實施例中,如第3圖所示之封裝堆疊結構3,亦可依良率需求,使該載板組件3a包含複數個第二有機材基板22,且各該第二有機材基板22之間係藉由複數支撐件30相堆疊。例如,各該第二有機材基板22之熱膨脹係數可相同或不相同,且該支撐件30係為銲球(solder ball)、銅核心球或如銅材或金材等之金屬件(如柱狀、塊狀或針狀)等,其電性連接該電路板26與各該第二有機材基板22。具體地,若各該第二有機材基板22之熱膨脹係數不相同時,各該第二有機材基板22之熱膨脹係數之數值可由第一有機材基板21之側朝向該電路板26之側依序增大。 In another embodiment, the package stack structure 3 as shown in FIG. 3 can also be configured such that the carrier assembly 3a includes a plurality of second organic material substrates 22 according to yield requirements, and each of the second organic material substrates Between 22 is stacked by a plurality of supporting members 30. For example, the thermal expansion coefficients of the second organic material substrates 22 may be the same or different, and the supporting member 30 is a solder ball, a copper core ball, or a metal member such as copper or gold (such as pillars). Shape, block or needle), etc., which electrically connect the circuit board 26 and each of the second organic substrate 22. Specifically, if the thermal expansion coefficients of the second organic material substrates 22 are not the same, the values of the thermal expansion coefficients of the second organic material substrates 22 can be in order from the side of the first organic material substrate 21 to the side of the circuit board 26 Increase.

因此,若以十層線路層之載板組件3a為例,可將兩層之第一線路層211配置於該第一有機材基板21,而將兩層之第二線路層221配置於四個第二有機材基板22,若每一層之線路層之製作良率約為95%,則該第一有機材基板21之良率為90.3%(即0.952),而各該第二有機材基板22之良率為90.3%(即0.952),故以現有製程即可完成該載板組件3a之製作,因而大幅降低製程成本。 Therefore, if the carrier assembly 3a with ten circuit layers is taken as an example, two first circuit layers 211 can be arranged on the first organic substrate 21, and two second circuit layers 221 can be arranged on four For the second organic material substrate 22, if the production yield of the circuit layer of each layer is about 95%, the yield of the first organic material substrate 21 is 90.3% (ie 0.95 2 ), and each of the second organic material substrates The yield rate of 22 is 90.3% (ie 0.95 2 ), so the production of the carrier assembly 3a can be completed with the existing manufacturing process, thus greatly reducing the manufacturing cost.

本發明復提供一種封裝堆疊結構2,3,其包括:一第一有機材基板21、至少一電子元件20以及至少一第二有機材基板22。 The present invention further provides a packaging stack structure 2 and 3, which includes: a first organic material substrate 21, at least one electronic component 20, and at least one second organic material substrate 22.

所述之第一有機材基板21係具有第一線路部21’。 The first organic material substrate 21 has a first circuit portion 21'.

所述之電子元件20係接置於該第一有機材基板21上且電性連接該第一線路部21’。 The electronic component 20 is connected to the first organic substrate 21 and electrically connected to the first circuit portion 21'.

所述之第二有機材基板22係具有第二線路部22’且供該第一有機材基板21藉由複數支撐體24堆疊於其上,其中,該第二有機材基板22未接置有晶片。 The second organic material substrate 22 has a second circuit portion 22' and the first organic material substrate 21 is stacked on it by a plurality of supports 24, wherein the second organic material substrate 22 is not connected with Wafer.

於一實施例中,該第一線路部21’之線路層之層數係不同於該第二線路部22’之線路層之層數。 In one embodiment, the number of circuit layers of the first circuit portion 21' is different from the number of circuit layers of the second circuit portion 22'.

於一實施例中,該第一線路部21’之線路層之層數係相同於該第二線路部22’之線路層之層數。 In one embodiment, the number of circuit layers of the first circuit portion 21' is the same as the number of circuit layers of the second circuit portion 22'.

於一實施例中,該第一有機材基板21上係設有散熱件23。 In one embodiment, a heat sink 23 is provided on the first organic substrate 21.

於一實施例中,該第一有機材基板21係與複數該第二有機材基板22相堆疊,且各該第二有機材基板22之間係藉由複數支撐件30相堆疊。 In one embodiment, the first organic material substrate 21 is stacked with a plurality of second organic material substrates 22, and each of the second organic material substrates 22 is stacked by a plurality of supports 30.

於一實施例中,該支撐體24係電性連接該第一與第二有機材基板21,22。 In one embodiment, the supporting body 24 is electrically connected to the first and second organic substrates 21 and 22.

於一實施例中,所述之封裝堆疊結構2,3復包括一電路板26,係供該第二有機材基板22藉由複數導電元件25堆疊於其上。例如,該導電元件25係電性連接該電路板26與該第二有機材基板22。另外,該第二有機材基板22之熱膨脹係數不同於該電路板26之熱膨脹係數。 In one embodiment, the package stacking structures 2 and 3 include a circuit board 26 for the second organic material substrate 22 to be stacked on it via a plurality of conductive elements 25. For example, the conductive element 25 is electrically connected to the circuit board 26 and the second organic substrate 22. In addition, the thermal expansion coefficient of the second organic substrate 22 is different from the thermal expansion coefficient of the circuit board 26.

於一實施例中,該第一有機材基板21之熱膨脹係數不同於該第二有機材基板22之熱膨脹係數。 In one embodiment, the thermal expansion coefficient of the first organic material substrate 21 is different from the thermal expansion coefficient of the second organic material substrate 22.

請一併參見第4A及4B圖,本發明亦提供一種載板組件2a,3a,4a,4b,其配置有複數線路層,該載板組件2a,3a,4a,4b係包括:至少一第一有機材基板21以及至少一第二有機材基板22。 Please refer to Figures 4A and 4B together. The present invention also provides a carrier board assembly 2a, 3a, 4a, 4b, which is configured with a plurality of circuit layers, and the carrier board assembly 2a, 3a, 4a, 4b includes: at least one An organic material substrate 21 and at least one second organic material substrate 22.

所述之第一有機材基板21係具有第一線路部21’。 The first organic material substrate 21 has a first circuit portion 21'.

所述之第二有機材基板22係具有第二線路部22’,且該第一有機材基板21藉由複數支撐體24堆疊於該第二有機材基板22上,其中,該載板組件2a,3a,4a,4b之複數線路層之層數係分配於該第一線路部21’及該第二線路部22’中。 The second organic material substrate 22 has a second circuit portion 22', and the first organic material substrate 21 is stacked on the second organic material substrate 22 by a plurality of supports 24, wherein the carrier assembly 2a The number of layers of the plural circuit layers of 3a, 4a, 4b is allocated to the first circuit portion 21' and the second circuit portion 22'.

於一實施例中,該第一線路部21’之線路層之層數係不同於該第二線路部22’之線路層之層數。 In one embodiment, the number of circuit layers of the first circuit portion 21' is different from the number of circuit layers of the second circuit portion 22'.

於一實施例中,該第一線路部21’之線路層之層數係相同於該第二線路部22’之線路層之層數。 In one embodiment, the number of circuit layers of the first circuit portion 21' is the same as the number of circuit layers of the second circuit portion 22'.

於一實施例中,該第一有機材基板21係與複數該第二有機材基板22相堆疊,且各該第二有機材基板22之間係藉由複數支撐件30相堆疊。進一步,所述之載板組件4b復包括形成於各該第二有機材基板22之間的包覆層40,其包覆該複數支撐件30。具體地,該包覆層40係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound)。 In one embodiment, the first organic material substrate 21 is stacked with a plurality of second organic material substrates 22, and each of the second organic material substrates 22 is stacked by a plurality of supports 30. Furthermore, the carrier assembly 4b further includes a coating layer 40 formed between the second organic material substrates 22, which covers the plurality of support members 30. Specifically, the coating layer 40 is an insulating material, such as polyimide (PI), dry film, epoxy (epoxy) encapsulant or molding compound.

於一實施例中,該支撐體24係電性連接該第一有機材基板21與第二有機材基板22。 In one embodiment, the supporting body 24 is electrically connected to the first organic material substrate 21 and the second organic material substrate 22.

於一實施例中,該第一有機材基板21之熱膨脹係數不同於該第二有機材基板22之熱膨脹係數。 In one embodiment, the thermal expansion coefficient of the first organic material substrate 21 is different from the thermal expansion coefficient of the second organic material substrate 22.

於一實施例中,所述之載板組件4b復包括包覆該複數支撐體24的包覆層40。具體地,該包覆層40係為絕緣材,如聚醯亞胺(PI)、乾膜、環氧樹脂之封裝膠體或封裝材。 In one embodiment, the carrier board assembly 4b includes a covering layer 40 covering the plurality of supports 24. Specifically, the coating layer 40 is an insulating material, such as polyimide (PI), dry film, epoxy encapsulant or encapsulant.

綜上所述,本發明之封裝堆疊結構及其製法與載板組件,係藉由將預計層數之線路層分別佈設於該第一與第二有機材基板中,且該第一與第二有機材基板之CTE不相同,故本發明能藉由該第二有機材基板分散熱應力,以避免該第一有機材基板與該電路板之間因CTE不匹配而相分離之問題,因而該第二有機材基板能有效電性連接該電路板或該第一及第二有機材基板能通過可靠度測試,進而提高產品之良率。 In summary, the package stack structure and its manufacturing method and carrier assembly of the present invention are achieved by arranging a predetermined number of circuit layers on the first and second organic substrates, and the first and second The CTE of the organic material substrate is different, so the present invention can use the second organic material substrate to disperse the thermal stress to avoid the problem of phase separation between the first organic material substrate and the circuit board due to CTE mismatch. The second organic material substrate can be effectively and electrically connected to the circuit board or the first and second organic material substrates can pass the reliability test, thereby improving the yield of the product.

再者,即使線路層之層數需求多,仍可藉由將預計層數之線路層分別佈設於多個第二有機材基板中,以提升各有機材基板之製程良率,故能有效降低各有機材基板之製作成本。 Furthermore, even if there is a large demand for the number of circuit layers, the expected number of circuit layers can still be arranged on multiple second organic substrates to increase the process yield of each organic substrate, which can effectively reduce The production cost of each organic substrate.

又,於該封裝堆疊結構中,有機材基板與電路板可依CTE之大小依序排設,以避免因熱應力變化過大而發生翹曲之問題。 In addition, in the package stack structure, the organic substrate and the circuit board can be arranged in sequence according to the size of the CTE to avoid the problem of warping due to excessive thermal stress changes.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are used to exemplify the principles and effects of the present invention, but not to limit the present invention. Anyone who is familiar with the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

2‧‧‧封裝堆疊結構 2‧‧‧Package stack structure

2a‧‧‧載板組件 2a‧‧‧Carrier board assembly

20‧‧‧電子元件 20‧‧‧Electronic components

21‧‧‧第一有機材基板 21‧‧‧The first organic substrate

21’‧‧‧第一線路部 21’‧‧‧First Circuit Department

210‧‧‧第一絕緣層 210‧‧‧First insulation layer

211‧‧‧第一線路層 211‧‧‧First circuit layer

22‧‧‧第二有機材基板 22‧‧‧Second organic substrate

22b‧‧‧第二側 22b‧‧‧Second side

22’‧‧‧第二線路部 22’‧‧‧Second Circuit Department

220‧‧‧第二絕緣層 220‧‧‧Second insulating layer

221‧‧‧第二線路層 221‧‧‧Second circuit layer

23‧‧‧散熱件 23‧‧‧Radiator

25‧‧‧導電元件 25‧‧‧Conductive element

26‧‧‧電路板 26‧‧‧Circuit board

Claims (28)

一種封裝堆疊結構,係包括:至少一電子元件;以及一具有複數線路層之載板組件,係包含有一具有第一線路部之第一有機材基板以及至少一具有第二線路部之第二有機材基板,且該第一有機材基板藉由複數支撐體堆疊於該第二有機材基板上,其中,該電子元件接置於該第一有機材基板上並電性連接該複數線路層,且用以電性連接該電子元件之該複數線路層之層數係分配於該第一線路部及該第二線路部中。 A packaging stack structure includes: at least one electronic component; and a carrier assembly with a plurality of circuit layers, including a first organic substrate with a first circuit portion and at least one second circuit with a second circuit portion An organic material substrate, and the first organic material substrate is stacked on the second organic material substrate by a plurality of supports, wherein the electronic component is connected to the first organic material substrate and electrically connected to the plurality of circuit layers, and The number of layers of the plurality of circuit layers used to electrically connect the electronic component is allocated to the first circuit portion and the second circuit portion. 如申請專利範圍第1項所述之封裝堆疊結構,其中,該第一線路部之線路層之層數係不同於該第二線路部之線路層之層數。 According to the package stack structure described in claim 1, wherein the number of circuit layers of the first circuit portion is different from the number of circuit layers of the second circuit portion. 如申請專利範圍第1項所述之封裝堆疊結構,其中,該第一線路部之線路層之層數係相同於該第二線路部之線路層之層數。 In the package stack structure described in claim 1, wherein the number of circuit layers of the first circuit portion is the same as the number of circuit layers of the second circuit portion. 如申請專利範圍第1項所述之封裝堆疊結構,其中,該第一有機材基板上係設有散熱件。 According to the package stack structure described in item 1 of the scope of patent application, a heat sink is provided on the first organic substrate. 如申請專利範圍第1項所述之封裝堆疊結構,其中,該第一有機材基板係與複數該第二有機材基板相堆疊,且各該第二有機材基板之間係藉由複數支撐件相堆疊。 According to the package stack structure described in claim 1, wherein the first organic material substrate is stacked with a plurality of the second organic material substrates, and a plurality of support members are provided between each of the second organic material substrates Phase stacking. 如申請專利範圍第1項所述之封裝堆疊結構,其中,該支撐體係電性連接該第一有機材基板與第二有機材基板。 According to the package stack structure described in claim 1, wherein the supporting system is electrically connected to the first organic material substrate and the second organic material substrate. 如申請專利範圍第1項所述之封裝堆疊結構,復包括一電路板,係供該第二有機材基板藉由複數導電元件堆疊於其上。 The package stack structure described in the first item of the scope of the patent application further includes a circuit board on which the second organic substrate is stacked via a plurality of conductive elements. 如申請專利範圍第7項所述之封裝堆疊結構,其中,該導電元件 係電性連接該電路板與該第二有機材基板。 The package stack structure described in item 7 of the scope of patent application, wherein the conductive element The circuit board and the second organic substrate are electrically connected. 如申請專利範圍第7項所述之封裝堆疊結構,其中,該第二有機材基板之熱膨脹係數不同於該電路板之熱膨脹係數,且該第二有機材基板之熱膨脹係數介於該電路板之熱膨脹係數與該第一有機材基板之熱膨脹係數之間。 The package stack structure described in claim 7, wherein the thermal expansion coefficient of the second organic material substrate is different from that of the circuit board, and the thermal expansion coefficient of the second organic material substrate is between that of the circuit board Between the thermal expansion coefficient and the thermal expansion coefficient of the first organic material substrate. 如申請專利範圍第1項所述之封裝堆疊結構,其中,該第一有機材基板之熱膨脹係數不同於該第二有機材基板之熱膨脹係數。 According to the package stack structure described in claim 1, wherein the thermal expansion coefficient of the first organic material substrate is different from the thermal expansion coefficient of the second organic material substrate. 一種封裝堆疊結構之製法,係包括:提供一具有第一線路部之第一有機材基板及至少一具有第二線路部之第二有機材基板;接置至少一電子元件於該第一有機材基板上;以及將該第一有機材基板藉由複數支撐體堆疊於該第二有機材基板上,以構成具有複數線路層之載板組件,並令該電子元件電性連接該複數線路層,其中,用以電性連接該電子元件之該複數線路層之層數係分配於該第一線路部及該第二線路部中。 A manufacturing method of a package stack structure includes: providing a first organic material substrate with a first circuit portion and at least one second organic material substrate with a second circuit portion; connecting at least one electronic component to the first organic material And the first organic material substrate is stacked on the second organic material substrate by a plurality of supports to form a carrier assembly having a plurality of circuit layers, and the electronic component is electrically connected to the plurality of circuit layers, Wherein, the number of layers of the plurality of circuit layers used to electrically connect the electronic component is allocated to the first circuit portion and the second circuit portion. 如申請專利範圍第11項所述之封裝堆疊結構之製法,其中,該第一線路部之線路層之層數係不同於該第二線路部之線路層之層數。 The manufacturing method of the package stack structure as described in claim 11, wherein the number of circuit layers of the first circuit part is different from the number of circuit layers of the second circuit part. 如申請專利範圍第11項所述之封裝堆疊結構之製法,其中,該第一線路部之線路層之層數係相同於該第二線路部之線路層之層數。 The manufacturing method of the package stack structure as described in claim 11, wherein the number of circuit layers of the first circuit portion is the same as the number of circuit layers of the second circuit portion. 如申請專利範圍第11項所述之封裝堆疊結構之製法,復包括設置散熱件於該第一有機材基板上。 The manufacturing method of the package stack structure as described in item 11 of the scope of the patent application includes arranging a heat sink on the first organic substrate. 如申請專利範圍第11項所述之封裝堆疊結構之製法,其中,該第一有機材基板係與複數該第二有機材基板相堆疊,且各該第二有機材基板之 間係藉由複數支撐件相堆疊。 The manufacturing method of the package stack structure described in claim 11, wherein the first organic material substrate is stacked with a plurality of the second organic material substrates, and each of the second organic material substrates The space is stacked by a plurality of support members. 如申請專利範圍第11項所述之封裝堆疊結構之製法,其中,該支撐體係電性連接該第一有機材基板與第二有機材基板。 According to the manufacturing method of the package stack structure described in claim 11, wherein the supporting system is electrically connected to the first organic material substrate and the second organic material substrate. 如申請專利範圍第11項所述之封裝堆疊結構之製法,復包括將該第二有機材基板藉由複數導電元件堆疊於一電路板上。 The manufacturing method of the package stack structure as described in item 11 of the scope of patent application includes stacking the second organic material substrate on a circuit board through a plurality of conductive elements. 如申請專利範圍第17項所述之封裝堆疊結構之製法,其中,該導電元件係電性連接該電路板與該第二有機材基板。 According to the method of manufacturing the package stack structure described in the scope of the patent application, the conductive element is electrically connected to the circuit board and the second organic substrate. 如申請專利範圍第17項所述之封裝堆疊結構之製法,其中,該第二有機材基板之熱膨脹係數不同於該電路板之熱膨脹係數,且該第二有機材基板之熱膨脹係數介於該電路板之熱膨脹係數與該第一有機材基板之熱膨脹係數之間。 The manufacturing method of the package stack structure as described in claim 17, wherein the thermal expansion coefficient of the second organic material substrate is different from the thermal expansion coefficient of the circuit board, and the thermal expansion coefficient of the second organic material substrate is between the circuit board Between the thermal expansion coefficient of the board and the thermal expansion coefficient of the first organic substrate. 如申請專利範圍第11項所述之封裝堆疊結構之製法,其中,該第一有機材基板之熱膨脹係數不同於該第二有機材基板之熱膨脹係數。 According to the manufacturing method of the package stack structure described in claim 11, the thermal expansion coefficient of the first organic material substrate is different from the thermal expansion coefficient of the second organic material substrate. 一種載板組件,其配置有複數線路層,該載板組件係包括:第一有機材基板,係具有第一線路部;以及第二有機材基板,係具有第二線路部,且該第一有機材基板藉由複數支撐體堆疊於該第二有機材基板上,其中,該複數線路層之層數係分配於該第一線路部及該第二線路部中。 A carrier board assembly is configured with a plurality of circuit layers. The carrier board assembly includes: a first organic material substrate having a first circuit part; and a second organic material substrate having a second circuit part, and the first The organic material substrate is stacked on the second organic material substrate by a plurality of supports, wherein the number of layers of the plurality of circuit layers is allocated to the first circuit portion and the second circuit portion. 如申請專利範圍第21項所述之載板組件,其中,該第一線路部之線路層之層數係不同於該第二線路部之線路層之層數。 The carrier board assembly described in claim 21, wherein the number of circuit layers of the first circuit part is different from the number of circuit layers of the second circuit part. 如申請專利範圍第21項所述之載板組件,其中,該第一線路部之線路層之層數係相同於該第二線路部之線路層之層數。 The carrier board assembly described in item 21 of the scope of patent application, wherein the number of circuit layers of the first circuit portion is the same as the number of circuit layers of the second circuit portion. 如申請專利範圍第21項所述之載板組件,其中,該第一有機材基板係與複數該第二有機材基板相堆疊,且各該第二有機材基板之間係藉由複數支撐件相堆疊。 The carrier assembly described in claim 21, wherein the first organic material substrate is stacked with a plurality of the second organic material substrates, and each of the second organic material substrates is connected by a plurality of supports Phase stacking. 如申請專利範圍第24項所述之載板組件,復包括形成於各該第二有機材基板之間且包覆該複數支撐件的包覆層。 The carrier board assembly described in item 24 of the scope of patent application includes a coating layer formed between the second organic substrates and covering the plurality of support members. 如申請專利範圍第21項所述之載板組件,其中,該支撐體係電性連接該第一有機材基板與第二有機材基板。 According to the carrier assembly described in claim 21, wherein the support system is electrically connected to the first organic material substrate and the second organic material substrate. 如申請專利範圍第21項所述之載板組件,其中,該第一有機材基板之熱膨脹係數不同於該第二有機材基板之熱膨脹係數。 The carrier assembly described in claim 21, wherein the thermal expansion coefficient of the first organic material substrate is different from the thermal expansion coefficient of the second organic material substrate. 如申請專利範圍第21項所述之載板組件,復包括包覆該複數支撐體的包覆層。 The carrier board assembly described in item 21 of the scope of patent application includes a coating layer covering the plurality of supports.
TW108115893A 2019-04-09 2019-05-08 Package stack structure, manufacturing method and carrier module thereof TWI778260B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910492840.7A CN111799242A (en) 2019-04-09 2019-06-06 Package stack structure, method for fabricating the same and carrier assembly
US16/538,286 US20200328142A1 (en) 2019-04-09 2019-08-12 Package stack structure, method for fabricating the same, and carrier component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW108112327 2019-04-09
TW108112327 2019-04-09

Publications (2)

Publication Number Publication Date
TW202038391A true TW202038391A (en) 2020-10-16
TWI778260B TWI778260B (en) 2022-09-21

Family

ID=72805384

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108115893A TWI778260B (en) 2019-04-09 2019-05-08 Package stack structure, manufacturing method and carrier module thereof

Country Status (2)

Country Link
CN (1) CN111799182A (en)
TW (1) TWI778260B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI763319B (en) * 2021-02-22 2022-05-01 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof
TWI824414B (en) * 2022-02-16 2023-12-01 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847527B2 (en) * 2001-08-24 2005-01-25 3M Innovative Properties Company Interconnect module with reduced power distribution impedance
US7060601B2 (en) * 2003-12-17 2006-06-13 Tru-Si Technologies, Inc. Packaging substrates for integrated circuits and soldering methods
JP2008016508A (en) * 2006-07-03 2008-01-24 Nec Electronics Corp Semiconductor device and its fabrication process
US7989895B2 (en) * 2006-11-15 2011-08-02 Avx Corporation Integration using package stacking with multi-layer organic substrates
US8008764B2 (en) * 2008-04-28 2011-08-30 International Business Machines Corporation Bridges for interconnecting interposers in multi-chip integrated circuits
US8067829B2 (en) * 2009-04-29 2011-11-29 Bae Systems Information And Electronic Systems Integration Inc. System and method for multi-chip module die extraction and replacement
US9123763B2 (en) * 2011-10-12 2015-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package (PoP) structure having at least one package comprising one die being disposed in a core material between first and second surfaces of the core material
US9601463B2 (en) * 2014-04-17 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out stacked system in package (SIP) and the methods of making the same
CN105448883B (en) * 2014-08-12 2017-11-24 碁鼎科技秦皇岛有限公司 Chip package base plate and, chip-packaging structure and the preparation method of the two
CN106548998A (en) * 2015-09-17 2017-03-29 胡迪群 The manufacture method of encapsulation base material
US9859253B1 (en) * 2016-06-29 2018-01-02 Intel Corporation Integrated circuit package stack
US10249596B1 (en) * 2016-06-30 2019-04-02 Juniper Networks, Inc. Fan-out in ball grid array (BGA) package
US10515887B2 (en) * 2016-09-20 2019-12-24 Mediatek Inc. Fan-out package structure having stacked carrier substrates and method for forming the same
US20190057931A1 (en) * 2017-08-17 2019-02-21 Powertech Technology Inc. Package method for generating package structure with fan-out interfaces
US10347574B2 (en) * 2017-09-28 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out packages

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI763319B (en) * 2021-02-22 2022-05-01 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof
TWI824414B (en) * 2022-02-16 2023-12-01 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof

Also Published As

Publication number Publication date
TWI778260B (en) 2022-09-21
CN111799182A (en) 2020-10-20

Similar Documents

Publication Publication Date Title
TWI645527B (en) Electronic package and method for fabricating the same
TW201714275A (en) Semiconductor package structure and method for forming the same
US20220406734A1 (en) Flip-chip packaging substrate and method for fabricating the same
US10361150B2 (en) Substrate construction and electronic package including the same
TWI791881B (en) Electronic package, assemble substrate and fabrication method thereof
TWI740305B (en) Electronic package and manufacturing method thereof
TWI734651B (en) Electronic package and method of manufacture
TWI778260B (en) Package stack structure, manufacturing method and carrier module thereof
TW202114103A (en) Electronic package and manufacturing method thereof
TWI734401B (en) Electronic package
CN108987355B (en) Electronic package and manufacturing method thereof
TWI733142B (en) Electronic package
US20230163082A1 (en) Electronic package and manufacturing method thereof
TWI802726B (en) Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same
TW202220139A (en) Electronic package and circuit structure thereof
US20200328142A1 (en) Package stack structure, method for fabricating the same, and carrier component
TWI824414B (en) Electronic package and manufacturing method thereof
TW202029448A (en) Electronic package and package substrate thereof and method for manufacturing same
TWI773360B (en) Electronic package and carrying structure thereof and method for manufacturing
TWI573230B (en) Package structure and its package substrate
US9084341B2 (en) Fabrication method of packaging substrate
TWI819440B (en) Electronic package and manufacturing method thereof
US20240162101A1 (en) Electronic package and manufacturing method thereof
TWI806343B (en) Semiconductor package and manufacturing method thereof
US20240096838A1 (en) Component-embedded packaging structure

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent