TW202035786A - Wafer susceptor device for vapor deposition equipment - Google Patents
Wafer susceptor device for vapor deposition equipment Download PDFInfo
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- TW202035786A TW202035786A TW108109565A TW108109565A TW202035786A TW 202035786 A TW202035786 A TW 202035786A TW 108109565 A TW108109565 A TW 108109565A TW 108109565 A TW108109565 A TW 108109565A TW 202035786 A TW202035786 A TW 202035786A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Description
本發明是有關於一種晶圓承載裝置,且特別是用於氣相沉積設備之晶圓承載裝置,透過結構的設計,而能夠精準定位及避免於運作過程發生位移的情況。The present invention relates to a wafer carrying device, especially a wafer carrying device for vapor deposition equipment, which can be accurately positioned and avoid displacement during operation through the design of the structure.
在半導體製程中,氣相沉積設備係使用各種不同來源氣體形成薄膜,包括化學氣相沉積(CVD)、物理氣相沉積等。其中金屬有機化學氣相沈積(MOCVD)是化學氣相沉積的一種,其於成長薄膜時,為將載流氣體(Carrier Gas)通過金屬有機反應源的容器,將反應源的飽和蒸氣輸送至反應腔中與其它反應氣體混合,並藉由加熱裝置控制待成長晶圓的加熱溫度,然後在待成長晶圓上面發生化學反應促成薄膜的成長。In the semiconductor manufacturing process, vapor deposition equipment uses a variety of different sources of gases to form films, including chemical vapor deposition (CVD), physical vapor deposition, etc. Among them, metal organic chemical vapor deposition (MOCVD) is a kind of chemical vapor deposition. When growing thin films, it is to pass the carrier gas (Carrier Gas) through the container of the metal organic reaction source, and transport the saturated vapor of the reaction source to the reaction The cavity is mixed with other reactive gases, and the heating temperature of the wafer to be grown is controlled by the heating device, and then a chemical reaction occurs on the wafer to be grown to promote the growth of the thin film.
MOCVD裝置包含反應腔體、配置於腔體內之承載基座以及用以使反應氣體流動至基板表面之管路。製程過程中需要將晶圓加熱至適當的溫度,經由管路將有機金屬之氣體導入至晶圓表面,藉此進行成膜製程。當承載基座轉動時,設置於其上之晶圓也跟著向承載基座的中心軸轉動。由於製程環境需於低溫或高溫下高速轉動,在設計上須考慮各元件的熱膨脹對於對位造成的影響。因此,如何開發出可以精確限制元件對位且不受熱脹冷縮影響的設備,為業界需要思考的問題。The MOCVD device includes a reaction chamber, a supporting base disposed in the chamber, and a pipeline for flowing the reaction gas to the surface of the substrate. During the manufacturing process, the wafer needs to be heated to an appropriate temperature, and the organic metal gas is introduced to the surface of the wafer through the pipeline to perform the film forming process. When the carrier base rotates, the wafers placed on it also rotate toward the central axis of the carrier base. Since the process environment requires high-speed rotation at low or high temperatures, the thermal expansion of each component must be considered in the design to affect the alignment. Therefore, how to develop a device that can precisely limit component alignment and is not affected by thermal expansion and contraction is a problem that the industry needs to think about.
本發明目的之一是提供一種晶圓承載裝置,設計支撐架頂面中心具有第一結構,且晶圓托盤底面中心具有第二結構,且藉由第二結構嵌合第一結構,限制晶圓托盤的中心與支撐架中心(旋轉盤開孔中心)在同一位置,達到精確對位的效果。One of the objectives of the present invention is to provide a wafer carrying device, in which the center of the top surface of the support frame is designed to have a first structure, and the center of the bottom surface of the wafer tray has a second structure, and the second structure is inserted into the first structure to limit the wafer The center of the tray and the center of the support frame (the center of the opening of the rotating disk) are at the same position to achieve the effect of precise alignment.
本發明提供一種用於氣相沉積設備之晶圓承載裝置,包括轉軸及旋轉盤。轉軸用以提供公轉,旋轉盤連接該轉軸,周邊輻射狀環設複數個開口。開口之任一周緣環設一段差部,其周緣環設凹槽,凹槽內分布滾珠,滾珠直徑不大於凹槽的寬度,但大於凹槽的深度。環繞凹槽周緣的側壁上設有傳動機構。支撐架固設於段差部上,支撐架頂面中心具有第一結構。晶圓托盤頂面用以承載晶圓,底面中心具有第二結構,用以嵌合支撐架的第一結構,晶圓托盤周簷置放於凹槽上的滾珠上,透過傳動機構驅動晶圓托盤旋轉。The invention provides a wafer carrying device for vapor deposition equipment, which comprises a rotating shaft and a rotating disk. The rotating shaft is used for providing revolution, the rotating disk is connected with the rotating shaft, and a plurality of openings are arranged radially around the periphery. A section of difference is ringed on any periphery of the opening, and grooves are arranged on the periphery of the opening. Balls are distributed in the grooves. The diameter of the balls is not greater than the width of the groove but greater than the depth of the groove. A transmission mechanism is provided on the side wall surrounding the periphery of the groove. The support frame is fixed on the step part, and the center of the top surface of the support frame has a first structure. The top surface of the wafer tray is used to carry wafers, and the center of the bottom surface has a second structure for fitting the first structure of the support frame. The peripheral eaves of the wafer tray are placed on the balls in the groove, and the wafer is driven by the transmission mechanism The tray rotates.
以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明的目的、技術內容、特點及其所達成的功效。The following detailed descriptions are provided with specific embodiments in conjunction with the accompanying drawings to make it easier to understand the purpose, technical content, characteristics and effects of the present invention.
請參考圖1,其繪示依照本發明一實施例之用於氣相沉積設備的晶圓承載裝置的俯視圖。晶圓承載裝置1包括一轉軸10及一旋轉盤(Suspector)20。轉軸10用以提供一公轉。旋轉盤20連接轉軸10,周邊輻射狀環設複數個開口200,開口200內設置有支撐架30,支撐架30可以與旋轉盤20一體成型或分開設置。晶圓托盤40可對應嵌合設置於開口200中,且位於支撐架30上方。Please refer to FIG. 1, which shows a top view of a wafer carrier device for vapor deposition equipment according to an embodiment of the present invention. The
圖2繪示依照本發明一實施例之用於氣相沉積設備的晶圓承載裝置的部分側視圖。圖3係繪示如圖2之晶圓承載裝置的嵌合結構A放大示意圖。圖4係繪示如圖2之晶圓承載裝置的凹槽及滾珠結構B放大示意圖。請同時參考圖2、3及4,於圖2中,開口200之任一周緣環具有段差部202。段差部202周緣環設一凹槽204,傳動機構208設於環繞凹槽204周緣的側壁204a上。傳動機構208的驅動,使得設置於晶圓承載裝置1上的晶圓45可相對轉軸10作公轉運動,同時分別相對旋轉盤20(繪示於圖1)開口200中心的旋轉軸T進行自轉運動,以均勻地於晶圓45上鍍膜。2 shows a partial side view of a wafer carrier device for vapor deposition equipment according to an embodiment of the invention. FIG. 3 is an enlarged schematic diagram showing the fitting structure A of the wafer carrier device of FIG. 2. FIG. 4 is an enlarged schematic diagram of the groove and ball structure B of the wafer carrier device shown in FIG. 2. Please refer to FIGS. 2, 3 and 4 at the same time. In FIG. 2, any peripheral ring of the opening 200 has a
如圖2所示,支撐架(Holder support)30固設於段差部202上,支撐架30的頂面中心具有一第一結構300(繪示於圖3)。支撐架30的上方設有晶圓托盤(Holder)40,晶圓托盤40的頂面用以承載一晶圓45。支撐架30及晶圓托盤40的材質可以包括碳化矽、氧化鋁、五氧化二鉭或二氧化鋯等耐摩擦的材質。As shown in FIG. 2, a
請同時參考圖1及圖2,於半導體薄膜沉積製程中,常需要使用高溫或低溫製程。當製程溫度在系統逐漸升溫至高溫時,圖1之旋轉盤20上的開口200,受到熱膨脹產生形變,內徑與外徑都逐漸變大,已不是完美真圓形狀。此外,晶圓托盤40下方的凹槽204(滾珠軌道)亦非完美真圓狀。由於晶圓托盤40是獨立的結構,受熱變形後仍可以維持真圓狀。由於,凹槽204(滾珠軌道)已非真圓,晶圓托盤40與滾珠206(繪示於圖4)的運動特性將發生變化,此現象可透過本發明實施例之嵌合結構改善,將說明於後。Please refer to FIG. 1 and FIG. 2 at the same time. In the semiconductor thin film deposition process, a high temperature or low temperature process is often used. When the process temperature gradually heats up to a high temperature in the system, the opening 200 on the rotating
請同時參考圖2及圖3,晶圓托盤40的底面中心具有一第二結構400(繪示於圖3)用以嵌合於支撐架30上的第一結構300。於此實施例中,第一結構300與支撐架30一體成型,且第二結構400與晶圓托盤40一體成型。其中,晶圓45作自轉運動的旋轉軸T,對應至支撐架30的中心及晶圓托盤40的中心。Please refer to FIGS. 2 and 3 at the same time. The center of the bottom surface of the
請同時參考圖2及圖4,晶圓托盤40周簷置放於凹槽204上的滾珠206(繪示於圖4)上,並透過傳動機構208驅動晶圓托盤40旋轉。於圖4中,凹槽204內分布複數個滾珠206(於圖2及圖4之剖面僅繪示出一滾珠)。滾珠206的直徑D不大於凹槽204之寬度W,但滾珠的直徑D大於凹槽204之深度H。2 and FIG. 4 at the same time, the
本案的發明精神在於,透過第一結構300與第二結構400互相嵌合,設計晶圓托盤40的承靠機制,使得晶圓托盤40的中心與旋轉盤20的開口200中心對位,提供晶圓托盤40承靠機制的限位功能,將晶圓托盤40中心與旋轉盤20上的開口200中心限制在同一位置,據以改善晶圓托盤40與滾珠206的運動特性,避免受到冷熱形變影響鍍膜的均勻性。The inventive spirit of the present case is to design the supporting mechanism of the
據此,並不特別限制第一結構300與第二結構400的具體形狀,只要可以達成上述目的之結構,均可作為本發明之嵌合結構。其中,嵌合的方式,可以是第一結構300的頂端與第二結構400的頂端點接觸(繪示於圖3及8)或與第一結構300與第二結構400線接觸(繪示於圖9),視第一結構300與第二結構400的嵌合結構而可能不同。Accordingly, the specific shapes of the
於一實施例中,第一結構300的中心剖面之頂端300a至底端300b具有一第一斜率,第二結構400的中心剖面之頂端400a至底端400b具有一第二斜率,第一斜率大於第二斜率。於另一實施例中,可以是相反的結構,第一結構300的中心剖面之頂端300a至底端300b具有一第一斜率,第二結構400的中心剖面之頂端400a至底端400b具有一第二斜率,第一斜率小於第二斜率。In one embodiment, the
如圖3所示,於一實施例中,嵌合結構A的第一結構300係一凸錐結構,第二結構400係一凹錐結構,且凹錐結構對應凸錐結構。舉例而言,第一結構300可以係圓錐狀凸錐結構,具有一第一頂點及一第一圓型底面,且第二結構400係圓錐狀凹錐結構,具有一第二頂點及一第二圓形底面,第一頂點接觸第二頂點(點接觸),且第一圓形底面之面積小於該第二圓形底面之面積。於此實施例中,第一結構300例如係圓角錐,且底面之直徑係2-3公厘(mm)。於其他實施例中,第一結構也可以是圓弧柱狀,且底面之直徑係2-3公厘(mm)。As shown in FIG. 3, in one embodiment, the
於另一實施例中,嵌合結構可以為圖3之相反結構,亦即,第一結構可以係一凹錐結構,第二結構可以係一凸錐結構,且凹錐結構對應凸錐結構。舉例而言,第一結構可以係圓錐狀凹錐結構,具有一第一頂點及一第一圓型底面,第二結構係凸錐結構,具有一第二頂點及一第二圓形底面,第一頂點接觸第二頂點(點接觸),且第一圓形底面之面積大於第二圓形底面之面積。於此實施例中,第二結構可以係圓角錐形狀,且底面之直徑係2-3公厘(mm)。於其他實施例中,第二結構也可以係圓弧柱狀。In another embodiment, the fitting structure may be the opposite structure of FIG. 3, that is, the first structure may be a concave cone structure, the second structure may be a convex cone structure, and the concave cone structure corresponds to the convex cone structure. For example, the first structure may be a conical concave cone structure with a first vertex and a first circular bottom surface, and the second structure may be a convex cone structure with a second vertex and a second circular bottom surface. One vertex touches the second vertex (point contact), and the area of the first circular bottom surface is larger than the area of the second circular bottom surface. In this embodiment, the second structure may be a rounded cone shape, and the diameter of the bottom surface is 2-3 millimeters (mm). In other embodiments, the second structure may also be cylindrical.
圖5係繪示依照本發明一實施例之支撐架30的俯視圖。支撐架30具有一體成型之一外圓環302及一內分隔304,且第一結構300設置於內分隔304的中心。支撐架30之內分隔304可以為一字型、十字形或叉型,並不作特別限制。圖6係繪示依照本發明一實施例之晶圓托盤40的示意圖,其中晶圓托盤40的中心具有第二結構400。FIG. 5 is a top view of the
圖7係繪示依照本發明另一實施例之晶圓承載裝置的部分側視圖。圖8繪示依照本發明另一實施例之嵌合結構C的放大示意圖。圖7所示之晶圓承載裝置的結構與圖2所示之晶圓承載裝置的結構相似,相同之處容此不再贅述。請同時參考圖7及圖8,晶圓承載裝置之嵌合結構C,其支撐架30的中心之第一結構500可以利用鎖固的方式,設置於支撐架30上。並且,晶圓托盤40的中心之第二結構600,可以係以鎖固的方式設置於晶圓托盤40上。於此實施例中,當第一結構500與第二結構600因長期使用造成磨損而影響對位精度及限制在中心位置的效果時,可以視磨損的情況更換零件,而不需要替換支撐架30整體及/或晶圓托盤40整體。FIG. 7 is a partial side view of a wafer carrier device according to another embodiment of the invention. FIG. 8 is an enlarged schematic diagram of a fitting structure C according to another embodiment of the present invention. The structure of the wafer carrier device shown in FIG. 7 is similar to the structure of the wafer carrier device shown in FIG. 2, and the similarities will not be repeated here. Please refer to FIGS. 7 and 8 at the same time, the
圖9繪示依照本發明又一實施例之嵌合結構E的放大示意圖。於圖7及圖8之實施例中,第一結構500可以是圓錐狀凸錐結構,且第二結構600可以係圓錐狀凹錐結構,第一結構500與第二結構600點接觸。於圖9之實施例中,第一結構550可以是圓弧柱狀,且底面之直徑係2-3公厘(mm),且第二結構600可以係圓錐狀凹錐結構,第一結構550與第二結構600線接觸。於其他實施例中,第二結構600也可以是圓弧狀凹陷結構(圖未示)。FIG. 9 is an enlarged schematic diagram of a fitting structure E according to another embodiment of the present invention. In the embodiment of FIGS. 7 and 8, the
上述晶圓承載裝置,例如可應用於金屬有機化學氣相沈積(MOCVD)之半導體制程中,例如是相對面朝上(face-up)設計之反應腔體,例如與金屬薄膜沉積之製程。藉由嵌合結構的設計,即便在不同溫度製程(特別是對於高溫製程)中,可以將支撐架中心之第一結構及晶圓托盤中心之第二結構限制在同一位置,據以對抗可精確對位嵌合,對抗熱膨脹造成的形變與對位偏移問題。如此一來,晶圓托盤在旋轉盤上的開口中心(支撐架中心)上運動,旋轉盤上的開口和環設之凹槽的公差即可放大,僅作為支撐作用,有效改善溫度對晶圓自轉運動的影響,且能夠精準定位及避免於運作過程發生位移的情況,可有效提高製程良率。The above-mentioned wafer carrier device can be applied to, for example, a metal organic chemical vapor deposition (MOCVD) semiconductor process, such as a reaction chamber with a face-up design, such as a metal film deposition process. With the design of the interlocking structure, even in different temperature processes (especially for high temperature processes), the first structure in the center of the support frame and the second structure in the center of the wafer tray can be constrained to the same position. Alignment fits against the problems of deformation and alignment offset caused by thermal expansion. In this way, the wafer tray moves on the center of the opening on the rotating disk (the center of the support frame), and the tolerance of the opening on the rotating disk and the ring groove can be enlarged, and it is only used as a support to effectively improve the temperature on the wafer. The influence of the rotation movement, the precise positioning and the avoidance of displacement during operation, can effectively improve the process yield.
藉由以上較佳具體實施例的詳述,是希望能更加清楚描述本發明的特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明的範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的設計於本發明所欲請求的專利範圍之範疇內。因此,本發明所申請的專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。Through the detailed description of the preferred embodiments above, it is hoped that the characteristics and spirit of the present invention can be described more clearly, rather than limiting the scope of the present invention by the preferred embodiments disclosed above. On the contrary, its purpose is to cover various changes and equivalent designs within the scope of the claimed patent of the present invention. Therefore, the scope of the patent application for the present invention should be interpreted in the broadest way based on the above description, so that it covers all possible changes and equivalent arrangements.
1:晶圓承載裝置1: Wafer carrier device
20:旋轉盤20: Rotating disc
200:開口200: opening
202:段差部202: step part
204:凹槽204: Groove
204a:側壁204a: side wall
206:滾珠206: ball
208:傳動機構208: Transmission Mechanism
30:支撐架30: Support frame
300、500、550:第一結構300, 500, 550: first structure
302:外圓環302: outer ring
304:內分隔304: inner partition
40:晶圓托盤40: Wafer tray
45:晶圓45: Wafer
400、600:第二結構400, 600: second structure
300a、400a:頂端300a, 400a: top
300b、400b:底端300b, 400b: bottom
A、C、E:嵌合結構A, C, E: mosaic structure
B:凹槽及滾珠結構B: Groove and ball structure
T:旋轉軸T: Rotation axis
H:深度H: depth
D:直徑D: diameter
W:寬度W: width
圖1係繪示依照本發明一實施例之用於氣相沉積設備的晶圓承載裝置的俯視圖。FIG. 1 is a top view of a wafer carrier device for vapor deposition equipment according to an embodiment of the present invention.
圖2係繪示依照本發明一實施例之用於氣相沉積設備的晶圓承載裝置的部分側視圖。2 is a partial side view of a wafer carrier device for vapor deposition equipment according to an embodiment of the present invention.
圖3係繪示如圖2之晶圓承載裝置的嵌合結構放大示意圖。FIG. 3 is an enlarged schematic diagram of the fitting structure of the wafer carrier device of FIG. 2.
圖4係繪示如圖2之晶圓承載裝置的凹槽及滾珠結構放大示意圖。FIG. 4 is an enlarged schematic diagram of the groove and ball structure of the wafer carrier device shown in FIG. 2.
圖5係繪示依照本發明一實施例之支撐架的俯視圖。Fig. 5 is a top view of a support frame according to an embodiment of the invention.
圖6係繪示依照本發明一實施例之晶圓托盤的示意圖。FIG. 6 is a schematic diagram of a wafer tray according to an embodiment of the invention.
圖7係繪示依照本發明另一實施例之晶圓承載裝置的部分側視圖。FIG. 7 is a partial side view of a wafer carrier device according to another embodiment of the invention.
圖8繪示依照本發明另一實施例之嵌合結構的放大示意圖。FIG. 8 is an enlarged schematic diagram of a fitting structure according to another embodiment of the present invention.
圖9繪示依照本發明又一實施例之嵌合結構的放大示意圖。FIG. 9 is an enlarged schematic diagram of a fitting structure according to another embodiment of the present invention.
1:晶圓承載裝置 1: Wafer carrier device
30:支撐架 30: Support frame
40:晶圓托盤 40: Wafer tray
45:晶圓 45: Wafer
200:開口 200: opening
202:段差部 202: step part
204:凹槽 204: Groove
208:傳動裝置 208: Transmission
A:嵌合結構 A: mosaic structure
B:凹槽及滾珠結構 B: Groove and ball structure
T:旋轉軸 T: Rotation axis
Claims (20)
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TW108109565A TWI718501B (en) | 2019-03-20 | 2019-03-20 | Wafer susceptor device for vapor deposition equipment |
CN202010203360.7A CN111719140B (en) | 2019-03-20 | 2020-03-20 | Wafer bearing device for vapor deposition equipment |
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CN114457322B (en) * | 2022-03-18 | 2023-01-24 | 广州志橙半导体有限公司 | High temperature resistant ceramic coating graphite tray subassembly |
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US20040216675A1 (en) * | 2003-04-30 | 2004-11-04 | Canon Kabushiki Kaisa | Deposited film forming method and apparatus |
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US20120321788A1 (en) * | 2011-06-16 | 2012-12-20 | Pinecone Material Inc. | Rotation system for thin film formation |
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US9428833B1 (en) * | 2015-05-29 | 2016-08-30 | Lam Research Corporation | Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal |
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CN111719140B (en) | 2022-05-03 |
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