TW202035786A - Wafer susceptor device for vapor deposition equipment - Google Patents

Abstract

A wafer susceptor device for a vapor deposition apparatus is disclosed, which comprises a rotating shaft and a rotating disk. The rotating shaft is used for providing a revolution. The rotating disk is connected to the rotating shaft, and a plurality of openings are disposed on the peripheral radial ring of the rotating disk. A stage difference is disposed at the peripheral portion of the opening, and a groove is formed around the circumference thereof. Balls are placed in the groove, and the diameter of each ball is not larger than the width of the groove, but larger than the depth of the groove. A transmission mechanism is provided on the side wall surrounding the circumference of the groove. A support frame is fixed on the stage difference portion, and the center of the top surface of the support frame has a first structure. A top surface of the wafer tray is used to carry the wafer, and the bottom surface has a second structure for fitting the first structure of the support frame. The wafer tray is placed on the ball upon the groove, and the wafer tray is driven by the transmission mechanism to rotate.

Description

Wafer carrying device for vapor deposition equipment

The present invention relates to a wafer carrying device, especially a wafer carrying device for vapor deposition equipment, which can be accurately positioned and avoid displacement during operation through the design of the structure.

In the semiconductor manufacturing process, vapor deposition equipment uses a variety of different sources of gases to form films, including chemical vapor deposition (CVD), physical vapor deposition, etc. Among them, metal organic chemical vapor deposition (MOCVD) is a kind of chemical vapor deposition. When growing thin films, it is to pass the carrier gas (Carrier Gas) through the container of the metal organic reaction source, and transport the saturated vapor of the reaction source to the reaction The cavity is mixed with other reactive gases, and the heating temperature of the wafer to be grown is controlled by the heating device, and then a chemical reaction occurs on the wafer to be grown to promote the growth of the thin film.

The MOCVD device includes a reaction chamber, a supporting base disposed in the chamber, and a pipeline for flowing the reaction gas to the surface of the substrate. During the manufacturing process, the wafer needs to be heated to an appropriate temperature, and the organic metal gas is introduced to the surface of the wafer through the pipeline to perform the film forming process. When the carrier base rotates, the wafers placed on it also rotate toward the central axis of the carrier base. Since the process environment requires high-speed rotation at low or high temperatures, the thermal expansion of each component must be considered in the design to affect the alignment. Therefore, how to develop a device that can precisely limit component alignment and is not affected by thermal expansion and contraction is a problem that the industry needs to think about.

One of the objectives of the present invention is to provide a wafer carrying device, in which the center of the top surface of the support frame is designed to have a first structure, and the center of the bottom surface of the wafer tray has a second structure, and the second structure is inserted into the first structure to limit the wafer The center of the tray and the center of the support frame (the center of the opening of the rotating disk) are at the same position to achieve the effect of precise alignment.

The invention provides a wafer carrying device for vapor deposition equipment, which comprises a rotating shaft and a rotating disk. The rotating shaft is used for providing revolution, the rotating disk is connected with the rotating shaft, and a plurality of openings are arranged radially around the periphery. A section of difference is ringed on any periphery of the opening, and grooves are arranged on the periphery of the opening. Balls are distributed in the grooves. The diameter of the balls is not greater than the width of the groove but greater than the depth of the groove. A transmission mechanism is provided on the side wall surrounding the periphery of the groove. The support frame is fixed on the step part, and the center of the top surface of the support frame has a first structure. The top surface of the wafer tray is used to carry wafers, and the center of the bottom surface has a second structure for fitting the first structure of the support frame. The peripheral eaves of the wafer tray are placed on the balls in the groove, and the wafer is driven by the transmission mechanism The tray rotates.

The following detailed descriptions are provided with specific embodiments in conjunction with the accompanying drawings to make it easier to understand the purpose, technical content, characteristics and effects of the present invention.

Please refer to FIG. 1, which shows a top view of a wafer carrier device for vapor deposition equipment according to an embodiment of the present invention. The wafer carrier device 1 includes a rotating shaft 10 and a rotating disk (Suspector) 20. The rotating shaft 10 is used to provide a revolution. The rotating disk 20 is connected to the rotating shaft 10, and a plurality of openings 200 are arranged radially around the periphery. A supporting frame 30 is provided in the opening 200. The supporting frame 30 can be integrally formed with the rotating disk 20 or separately provided. The wafer tray 40 can be correspondingly fitted in the opening 200 and located above the support frame 30.

2 shows a partial side view of a wafer carrier device for vapor deposition equipment according to an embodiment of the invention. FIG. 3 is an enlarged schematic diagram showing the fitting structure A of the wafer carrier device of FIG. 2. FIG. 4 is an enlarged schematic diagram of the groove and ball structure B of the wafer carrier device shown in FIG. 2. Please refer to FIGS. 2, 3 and 4 at the same time. In FIG. 2, any peripheral ring of the opening 200 has a step 202. A groove 204 is arranged around the periphery of the step portion 202, and the transmission mechanism 208 is arranged on the side wall 204 a surrounding the periphery of the groove 204. Driven by the transmission mechanism 208, the wafer 45 disposed on the wafer carrier device 1 can revolve relative to the rotating shaft 10, and simultaneously rotate relative to the rotating shaft T at the center of the opening 200 of the rotating disk 20 (shown in FIG. 1) , To evenly coat the wafer 45.

As shown in FIG. 2, a holder support 30 is fixed on the step portion 202, and the center of the top surface of the support frame 30 has a first structure 300 (shown in FIG. 3). A wafer tray (Holder) 40 is arranged above the support frame 30, and the top surface of the wafer tray 40 is used to carry a wafer 45. The material of the support frame 30 and the wafer tray 40 may include friction-resistant materials such as silicon carbide, aluminum oxide, tantalum pentoxide, or zirconium dioxide.

Please refer to FIG. 1 and FIG. 2 at the same time. In the semiconductor thin film deposition process, a high temperature or low temperature process is often used. When the process temperature gradually heats up to a high temperature in the system, the opening 200 on the rotating disk 20 in FIG. 1 is deformed by thermal expansion, and the inner and outer diameters gradually become larger, which is no longer a perfect round shape. In addition, the groove 204 (ball track) under the wafer tray 40 is not perfectly round. Since the wafer tray 40 is an independent structure, it can still maintain a true round shape after being deformed by heat. Since the groove 204 (ball track) is not a true circle, the movement characteristics of the wafer tray 40 and the ball 206 (shown in FIG. 4) will change. This phenomenon can be improved by the fitting structure of the embodiment of the present invention. Explained later.

Please refer to FIGS. 2 and 3 at the same time. The center of the bottom surface of the wafer tray 40 has a second structure 400 (shown in FIG. 3) for fitting the first structure 300 on the support frame 30. In this embodiment, the first structure 300 and the support frame 30 are integrally formed, and the second structure 400 and the wafer tray 40 are integrally formed. Among them, the rotation axis T on which the wafer 45 rotates corresponds to the center of the support frame 30 and the center of the wafer tray 40.

2 and FIG. 4 at the same time, the wafer tray 40 is placed on the ball 206 (shown in FIG. 4) on the groove 204, and the wafer tray 40 is driven to rotate through the transmission mechanism 208. In FIG. 4, a plurality of balls 206 are distributed in the groove 204 (only one ball is shown in the cross section of FIGS. 2 and 4). The diameter D of the ball 206 is not greater than the width W of the groove 204, but the diameter D of the ball is greater than the depth H of the groove 204.

The inventive spirit of the present case is to design the supporting mechanism of the wafer tray 40 through the inter-engagement of the first structure 300 and the second structure 400, so that the center of the wafer tray 40 is aligned with the center of the opening 200 of the rotating disk 20 to provide wafers. The limit function of the support mechanism of the round tray 40 restricts the center of the wafer tray 40 and the center of the opening 200 on the rotating disk 20 to the same position, thereby improving the motion characteristics of the wafer tray 40 and the balls 206, and avoiding the influence of thermal deformation Uniformity of coating.

Accordingly, the specific shapes of the first structure 300 and the second structure 400 are not particularly limited, and any structure that can achieve the above-mentioned purpose can be used as the fitting structure of the present invention. Wherein, the way of fitting can be point contact between the top end of the first structure 300 and the top end of the second structure 400 (shown in FIGS. 3 and 8) or line contact with the first structure 300 and the second structure 400 (shown in Figure 9), depending on the fitting structure of the first structure 300 and the second structure 400 may be different.

In one embodiment, the top end 300a to the bottom end 300b of the central section of the first structure 300 have a first slope, and the top end 400a to the bottom end 400b of the central section of the second structure 400 have a second slope, the first slope being greater than The second slope. In another embodiment, it may be the opposite structure. The top end 300a to the bottom end 300b of the central section of the first structure 300 have a first slope, and the top end 400a to the bottom end 400b of the central section of the second structure 400 have a first slope. Two slopes, the first slope is smaller than the second slope.

As shown in FIG. 3, in one embodiment, the first structure 300 of the fitting structure A is a convex cone structure, the second structure 400 is a concave cone structure, and the concave cone structure corresponds to the convex cone structure. For example, the first structure 300 may be a conical convex cone structure with a first vertex and a first round bottom surface, and the second structure 400 may be a conical concave cone structure with a second vertex and a second A circular bottom surface, the first vertex contacts the second vertex (point contact), and the area of the first circular bottom surface is smaller than the area of the second circular bottom surface. In this embodiment, the first structure 300 is, for example, a rounded cone, and the diameter of the bottom surface is 2-3 millimeters (mm). In other embodiments, the first structure may also be cylindrical, and the diameter of the bottom surface is 2-3 millimeters (mm).

In another embodiment, the fitting structure may be the opposite structure of FIG. 3, that is, the first structure may be a concave cone structure, the second structure may be a convex cone structure, and the concave cone structure corresponds to the convex cone structure. For example, the first structure may be a conical concave cone structure with a first vertex and a first circular bottom surface, and the second structure may be a convex cone structure with a second vertex and a second circular bottom surface. One vertex touches the second vertex (point contact), and the area of the first circular bottom surface is larger than the area of the second circular bottom surface. In this embodiment, the second structure may be a rounded cone shape, and the diameter of the bottom surface is 2-3 millimeters (mm). In other embodiments, the second structure may also be cylindrical.

FIG. 5 is a top view of the support frame 30 according to an embodiment of the invention. The support frame 30 has an outer ring 302 and an inner partition 304 integrally formed, and the first structure 300 is disposed at the center of the inner partition 304. The partition 304 within the support frame 30 can be in a straight shape, a cross shape or a fork shape, and is not particularly limited. 6 is a schematic diagram of a wafer tray 40 according to an embodiment of the present invention, wherein the center of the wafer tray 40 has a second structure 400.

FIG. 7 is a partial side view of a wafer carrier device according to another embodiment of the invention. FIG. 8 is an enlarged schematic diagram of a fitting structure C according to another embodiment of the present invention. The structure of the wafer carrier device shown in FIG. 7 is similar to the structure of the wafer carrier device shown in FIG. 2, and the similarities will not be repeated here. Please refer to FIGS. 7 and 8 at the same time, the first structure 500 in the center of the support frame 30 of the inserting structure C of the wafer carrier device can be arranged on the support frame 30 by means of locking. In addition, the second structure 600 at the center of the wafer tray 40 can be arranged on the wafer tray 40 in a locking manner. In this embodiment, when the first structure 500 and the second structure 600 are worn out due to long-term use, which affects the alignment accuracy and the effect of limiting the center position, the parts can be replaced according to the wear situation, without the need to replace the support frame 30 The whole and/or the whole wafer tray 40.

FIG. 9 is an enlarged schematic diagram of a fitting structure E according to another embodiment of the present invention. In the embodiment of FIGS. 7 and 8, the first structure 500 may be a conical convex cone structure, and the second structure 600 may be a conical concave cone structure, and the first structure 500 and the second structure 600 are in point contact. In the embodiment of FIG. 9, the first structure 550 may be a circular columnar shape, and the diameter of the bottom surface is 2-3 millimeters (mm), and the second structure 600 may be a conical concave cone structure, the first structure 550 It is in line contact with the second structure 600. In other embodiments, the second structure 600 may also be an arc-shaped recessed structure (not shown).

The above-mentioned wafer carrier device can be applied to, for example, a metal organic chemical vapor deposition (MOCVD) semiconductor process, such as a reaction chamber with a face-up design, such as a metal film deposition process. With the design of the interlocking structure, even in different temperature processes (especially for high temperature processes), the first structure in the center of the support frame and the second structure in the center of the wafer tray can be constrained to the same position. Alignment fits against the problems of deformation and alignment offset caused by thermal expansion. In this way, the wafer tray moves on the center of the opening on the rotating disk (the center of the support frame), and the tolerance of the opening on the rotating disk and the ring groove can be enlarged, and it is only used as a support to effectively improve the temperature on the wafer. The influence of the rotation movement, the precise positioning and the avoidance of displacement during operation, can effectively improve the process yield.

Through the detailed description of the preferred embodiments above, it is hoped that the characteristics and spirit of the present invention can be described more clearly, rather than limiting the scope of the present invention by the preferred embodiments disclosed above. On the contrary, its purpose is to cover various changes and equivalent designs within the scope of the claimed patent of the present invention. Therefore, the scope of the patent application for the present invention should be interpreted in the broadest way based on the above description, so that it covers all possible changes and equivalent arrangements.

1: Wafer carrier device

20: Rotating disc

200: opening

202: step part

204: Groove

204a: side wall

206: ball

208: Transmission Mechanism

30: Support frame

300, 500, 550: first structure

302: outer ring

304: inner partition

40: Wafer tray

45: Wafer

400, 600: second structure

300a, 400a: top

300b, 400b: bottom

A, C, E: mosaic structure

B: Groove and ball structure

T: Rotation axis

H: depth

D: diameter

W: width

FIG. 1 is a top view of a wafer carrier device for vapor deposition equipment according to an embodiment of the present invention.

2 is a partial side view of a wafer carrier device for vapor deposition equipment according to an embodiment of the present invention.

FIG. 3 is an enlarged schematic diagram of the fitting structure of the wafer carrier device of FIG. 2.

FIG. 4 is an enlarged schematic diagram of the groove and ball structure of the wafer carrier device shown in FIG. 2.

Fig. 5 is a top view of a support frame according to an embodiment of the invention.

FIG. 6 is a schematic diagram of a wafer tray according to an embodiment of the invention.

FIG. 7 is a partial side view of a wafer carrier device according to another embodiment of the invention.

FIG. 8 is an enlarged schematic diagram of a fitting structure according to another embodiment of the present invention.

FIG. 9 is an enlarged schematic diagram of a fitting structure according to another embodiment of the present invention.

1: Wafer carrier device

30: Support frame

40: Wafer tray

45: Wafer

200: opening

202: step part

204: Groove

208: Transmission

A: mosaic structure

B: Groove and ball structure

T: Rotation axis

Claims (20)

A wafer carrying device for vapor deposition equipment, comprising: a rotating shaft for providing a revolution; and a rotating disk connected to the rotating shaft, and a plurality of openings are radially ringed around the periphery, wherein any of the openings A section of the difference is ringed with a groove on the periphery of the section. A plurality of balls are distributed in the groove. The diameter of the balls is not greater than the width of the groove, but the diameter of the balls is greater than the depth of the groove , A transmission mechanism is provided on the side wall surrounding the periphery of the groove; a support frame is fixed on the stepped portion, and the center of the top surface of the support frame has a first structure; and a wafer tray, the wafer tray The top surface of the wafer tray is used to carry a wafer, the center of the bottom surface of the wafer tray has a second structure for fitting into the first structure of the support frame, and the peripheral eaves of the wafer tray are placed on the groove On the balls and drive the wafer tray to rotate through the transmission mechanism. The wafer carrier device for vapor deposition equipment according to the first item of the patent application, wherein the first structure is a concave cone structure, the second structure is a convex cone structure, and the concave cone structure corresponds to Convex cone structure. The wafer carrier device for vapor deposition equipment as described in the scope of patent application 2, wherein the first structure is a conical concave-cone structure with a first vertex and a first circular bottom surface, the second The structure is a convex cone structure with a second vertex and a second circular bottom surface, the first vertex contacts the second vertex, and the area of the first circular bottom surface is larger than the area of the second circular bottom surface. The wafer carrier device for vapor deposition equipment as described in claim 1, wherein the first structure is a convex cone structure, the second structure is a concave cone structure, and the concave cone structure corresponds to Convex cone structure. The wafer carrier device for vapor deposition equipment described in claim 4, wherein the first structure is a conical convex cone structure with a first vertex and a first circular bottom surface, and the second The structure is a conical concave cone structure with a second vertex and a second circular bottom surface, the first vertex contacts the second vertex, and the area of the first circular bottom surface is smaller than the area of the second circular bottom surface. The wafer carrier device for vapor deposition equipment described in the first item of the scope of patent application, wherein the first structure is arranged on the support frame in a locking manner. The wafer carrier device for vapor deposition equipment described in the first item of the scope of patent application, wherein the second structure is arranged on the wafer tray in a locking manner. The wafer carrier device for vapor deposition equipment described in the first item of the scope of patent application, wherein the top of the first structure is in point contact with the top of the second structure. The wafer carrier device for vapor deposition equipment as described in the first item of the patent application, wherein the first structure is in line contact with the second structure. The wafer carrier device for vapor deposition equipment as described in the scope of the patent application, wherein the rotation axis of the first structure and the second structure correspond to the center of the top surface of the support frame and the wafer tray Center of bottom surface. The wafer carrier device for vapor deposition equipment according to the first item of the scope of patent application, wherein the top to the bottom of the central section of the first structure has a first slope, and the top of the central section of the second structure There is a second slope to the bottom end, and the first slope is greater than the second slope. The wafer carrier device for vapor deposition equipment according to the first item of the scope of patent application, wherein the top to the bottom of the central section of the first structure has a first slope, and the top of the central section of the second structure There is a second slope to the bottom end, and the first slope is smaller than the second slope. The wafer carrier device for vapor deposition equipment as described in the first item of the patent application, wherein the first structure and the support frame are integrally formed. The wafer carrier device for vapor deposition equipment as described in the first item of the patent application, wherein the second structure and the wafer tray are integrally formed. The wafer carrier device for vapor deposition equipment as described in the first item of the scope of patent application, wherein the support frame and the rotating disk are integrally formed. The wafer carrier device for vapor deposition equipment as described in claim 1, wherein the support frame has an outer ring and an inner partition integrally formed, and the first structure is disposed on the inner partition center. The wafer carrier device for vapor deposition equipment described in the first item of the scope of patent application, wherein the inner partition of the support frame is in a straight shape, a cross shape or a fork shape. The wafer carrier device for vapor deposition equipment described in the first item of the scope of patent application, wherein the first structure is a rounded cone or a circular columnar shape, and the diameter of the bottom surface is 2 to 3 millimeters (mm). The wafer carrier device for vapor deposition equipment described in the first item of the scope of patent application, wherein the second structure is a rounded cone or a circular columnar shape, and the diameter of the bottom surface is 2-3 millimeters (mm). The wafer carrier device for vapor deposition equipment as described in the first item of the patent application, wherein the support frame and the wafer tray include silicon carbide, aluminum oxide, tantalum pentoxide or zirconium dioxide.

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