TW202034553A - Manufacturing method and testing method of testing device - Google Patents

Abstract

A testing method of a testing deivce is provided. First, a growth substrate and a light-emitting structure formed on the growth substrate are provided. Next, a mold layer is formed on the light-emitting structure. Next, a plurality of first and second electrode members are formed on the mold layer, where the first electrode members are connected to the light-emitting structure through the mold layer. Afterwards, the first and second electrode members are attached to the holding substrate. Afterwards, the growth substrate and the part of the light-emitting structure are removed to separate a plurality of light-emitting components. An electrode of each light-emitting component is disposed opposite to one of the second electrode members. Afterwards, the mold layer is removed, so that a gap is formed between an electrode of each light-emitting component and the second electrode member which is opposite to the electrode. Each light-emitting component is connected to one of the first electrode members via a first tether.

Description

Manufacturing method and detection method of detection device

The present invention relates to a manufacturing method and a detection method of a detection device, and more particularly to a manufacturing method and a detection method of a device capable of detecting light-emitting elements.

The current solid-state lighting technology (Solid-State Lighting, SSL) has developed a micron-sized micro light emitting diode (Micro Light Emitting Diode, μLED) whose length or width can be less than 10 microns (μm). For example, the bottom surface of the micro light emitting diode may be a square of 10 microns by 10 microns. Due to the small size of the miniature light-emitting diode, the miniature light-emitting diode is suitable for making a pixel display.

General light-emitting diodes will undergo electrical testing after completion to ensure that the completed light-emitting diodes can operate normally, and current electrical testing equipment usually uses probes to contact the electrodes of the light-emitting diodes (Electrode), so that the light-emitting diode can be energized, so as to detect whether the light-emitting diode will emit light. However, compared with the miniature light-emitting diode that is too small in size, the size of the above-mentioned probe is too large for electrical detection of the miniature light-emitting diode, and the probe may even damage the miniature light-emitting diode, so that the current It is difficult for electrical testing equipment to use probes to detect miniature light-emitting diodes.

The present invention provides a method for manufacturing a detection device, which has a plurality of cantilevers capable of suspending a light-emitting element to be tested.

The present invention also provides a detection method of a detection device, which utilizes a means of pressing a plurality of light-emitting elements to electrically conduct these pressed light-emitting elements with a circuit detection substrate.

The manufacturing method of the detection device provided by the present invention includes providing a growth substrate and a light emitting structure formed on the growth substrate. Next, a model layer is formed on the light emitting structure, which has a plurality of through holes exposing the light emitting structure. Then, a plurality of first electrode members and a plurality of second electrode members are formed on the model layer, wherein the first electrode members respectively contact and connect the light emitting structure through the through holes. Then, the first electrode parts and the second electrode parts are fixed to the carrier substrate. After that, the growth substrate is removed. After removing the growth substrate, remove part of the light-emitting structure to separate a plurality of light-emitting elements, wherein each light-emitting element is located opposite to the adjacent first electrode member and second electrode member, and one electrode of each light-emitting element is located therein The opposite side of a second electrode member, and does not touch the second electrode member. Afterwards, the model layer is removed, so that a gap is formed between the electrode of each light-emitting element and the opposite second electrode member, wherein each light-emitting element is connected to one of the first electrode members via the first cantilever.

In an embodiment of the present invention, the method of forming the mold layer includes forming a plurality of photoresist patterns stacked on each other. Each photoresist pattern has a plurality of openings, and each through hole is formed by the openings of at least two layers of photoresist patterns communicating with each other.

In an embodiment of the present invention, a method of forming a light emitting structure includes sequentially forming a first semiconducting layer, a light emitting layer, a second semiconducting layer, a conductive layer, and a metal layer on a growth substrate, and removing part of the light emitting structure The method includes performing lithography and etching processes on the light-emitting structure, wherein the lithography and etching processes retain part of the metal layer and part of the conductor layer overlapping the first electrode members.

In an embodiment of the present invention, a method of forming a light-emitting structure includes forming a plurality of light-emitting elements separated from each other on a growth substrate. A support layer is formed on the growth substrate, wherein the support layer surrounds each light-emitting element and exposes the electrodes of the light-emitting element. A plurality of first cantilevers and a plurality of second cantilevers are formed on the support layer, wherein each light-emitting element is connected to one of the first cantilevers and one of the second cantilevers. The method of removing part of the light emitting structure includes removing the support layer.

The detection method of the detection device provided by the present invention includes providing a circuit detection substrate, a plurality of light-emitting elements, and a plurality of first cantilevers. The circuit detection substrate includes a plurality of first electrode members and a plurality of second electrode members, and each light-emitting element is arranged on the circuit detection substrate and has a pair of electrodes, wherein one electrode of each light-emitting element is opposite to the second electrode member They are separated from each other to form a gap, and each first cantilever is connected to one of the light-emitting elements and one of the first electrode members. Then, the capturing element is pressed against the multiple light-emitting elements, so that the multiple electrodes contact the multiple second electrode elements, respectively. After that, power is applied to at least one first electrode member and at least one second electrode member, so that a plurality of qualified light-emitting elements among the light-emitting elements pressed by the capturing element emit light. According to the above light, the number of these qualified light-emitting elements is measured.

In an embodiment of the present invention, the above detection method further includes providing a plurality of second cantilevers, wherein each second cantilever is connected to one of the light-emitting elements and one of the second electrode parts, and the electrodes of each light-emitting element are located in the first The electrode part is opposite to the second electrode part and is separated from the first electrode part and the second electrode part. When the capturing element presses the multiple light-emitting elements, the electrodes of the light-emitting elements respectively contact the multiple first electrode elements and the multiple second electrode elements.

In an embodiment of the present invention, when the ratio between the number of qualified light-emitting elements and the number of light-emitting elements compressed by the extraction element is greater than 0.99, the light-emitting elements compressed by the extraction element are extracted from the circuit detection substrate. Elements, and the light-emitting elements are mounted on the element array substrate with the picking member.

In an embodiment of the present invention, after the at least one first electrode element and the at least one second electrode element are energized, the capturing element is made to press the multiple light emitting elements.

In an embodiment of the present invention, before the at least one first electrode element and the at least one second electrode element are energized, the capturing element is made to press the multiple light emitting elements.

In an embodiment of the present invention, when the capturing element presses the multiple light-emitting elements, the at least one first electrode element and the at least one second electrode element are simultaneously energized.

The present invention uses multiple cantilevers (such as the first cantilever) to suspend multiple light-emitting elements above the circuit detection substrate, so that these light-emitting elements are disconnected from the circuit detection substrate before detection. When detecting these light-emitting elements, the light-emitting elements can be pressed so that the electrode of the light-emitting element can contact the electrode member (for example, the second electrode member). In this way, these pressed light-emitting elements can be connected to the circuit detection substrate, and the light-emitting elements can be detected.

In order to make the features and advantages of the present invention more comprehensible, the following specific examples are cited in conjunction with the accompanying drawings, which are described in detail as follows.

In the following text, the same element symbols will be used to denote the same elements. Secondly, in order to clearly present the technical features of the case, the dimensions (such as length, width, thickness, and depth) of the elements (such as layers, films, substrates, and regions) in the drawings will be enlarged in unequal proportions. Therefore, the description and explanation of the following embodiments are not limited to the size and shape presented by the elements in the drawings, but should cover the size, shape, and deviation of the two caused by actual manufacturing processes and/or tolerances. For example, the flat surface shown in the drawing may have rough and/or nonlinear characteristics, and the acute angle shown in the drawing may be round. Therefore, the elements shown in the drawings of this case are mainly used for illustration, and are not intended to accurately depict the actual shape of the elements, nor are they used to limit the scope of patent applications in this case.

Secondly, the words "about", "approximately" or "substantially" appearing in the content of this case not only cover the clearly stated value and range of values, but also cover the understanding of those with ordinary knowledge in the technical field of the invention. The allowable deviation range of, wherein the deviation range can be determined by the error generated during measurement, and this error is caused by the limitation of both the measurement system or the process conditions, for example. In addition, "about" may mean within one or more standard deviations of the above-mentioned value, for example within ±30%, ±20%, ±10%, or ±5%. The terms "about", "approximately" or "substantially" appearing in this text can be used to select acceptable deviation ranges or standard deviations based on optical properties, etching properties, mechanical properties, or other properties. The standard deviation applies all the above optical properties, etching properties, mechanical properties and other properties.

FIG. 1A is a schematic top view of a detection device according to at least one embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view drawn along the line 1B-1B in FIG. 1A. 1A and 1B, a plurality of light-emitting elements 200 can be temporarily fixed on the detection device 100, and the detection device 100 can detect these light-emitting elements 200. Figures 1A and 1B show the detection device 100 before the detection. Before the detection, the light-emitting elements 200 may be arranged in an array, and all are arranged on the same side of the detection device 100, wherein the light-emitting elements 200 may be light-emitting diodes (LEDs). In terms of size, the light-emitting element 200 may be a micro light emitting diode (μLED) with a size of approximately less than 10 microns, or a sub-millimeter light emitting diode (mini LED) with a size of approximately greater than 10 microns and less than 100 microns. Of course, the light-emitting element 200 may also be a light-emitting diode with a size greater than 100 microns.

Each light emitting element 200 may include a pair of electrodes 211 and 212, a first semiconducting layer 221, a second semiconducting layer 222, a light emitting layer 223, and a conductor layer 241, wherein the light emitting layer 223 is sandwiched between the first semiconducting layer 221 and the Between the two semiconducting layers 222, and the conductor layer 241 is formed between the electrode 212 and the second semiconducting layer 222. The conductive layer 241 may be a transparent conductive layer, which may be made of metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (Aluminum Tin Oxide, Oxide, ATO), Aluminum Zinc Oxide (AZO) or Indium Germanium Zinc Oxide (IGZO). The electrodes 211 and 212 may both be metal layers, wherein the electrode 211 may be a cathode, and the electrode 212 may be an anode. In addition, the electrodes 211 and 212 are respectively located on the upper and lower sides of the light emitting element 200, that is, the light emitting element 200 can be a vertical light emitting diode.

The main carriers of the first semiconducting layer 221 and the second semiconducting layer 222 are different. For example, the first semiconducting layer 221 may be an N-type semiconductor, and its main carriers are electrons. The second semiconducting layer 222 may be a P-type semiconductor, and its main carriers are holes. The light emitting layer 223 may have a multiple quantum well (MQW) and contact the first semiconducting layer 221 and the second semiconducting layer 222. When the light-emitting element 200 is energized, the main carriers of both the first semiconducting layer 221 and the second semiconducting layer 222, namely electrons and holes, can be injected into the light-emitting layer 223 and recombined in the light-emitting layer 223 (recombination ) To generate photons to make the light emitting layer 223 emit light.

The detection device 100 includes a circuit detection substrate 110, and the circuit detection substrate 110 includes a plurality of first electrode components 111, a plurality of second electrode components 112, a first test pad 113, a second test pad 114, a connection layer 140, and a carrier substrate 119 , Wherein the first electrode member 111, the second electrode member 112, the first test pad 113, and the second test pad 114 may all be metal layers and formed on the same plane of the carrier substrate 119, and the connecting layer 140 can connect these An electrode element 111 and these second electrode elements 112 are fixed on the carrier substrate 119. The first electrode members 111 may be arranged in parallel with each other and connected to the first test pad 113, and the second electrode members 112 may be arranged in parallel with each other and connected to the second test pad 114, so that the first test pad 113 is electrically connected to the first electrodes The second electrode member 112 is electrically connected to the second test pad 114. The external power source can be electrically connected to the first test pad 113 and the second test pad 114, and can supply power to the first test pad 113 and the second test pad 114, so that the first electrode member 111 and the second electrode member 112 are energized. In addition, the above-mentioned external power source can be a DC power supply, so the electric energy received by the first pole piece 111 and the second pole piece 112 is DC power.

The first electrode member 111 and the second electrode member 112 are not in contact with each other, and the first test pad 113 and the second test pad 114 are not in contact with each other, so the first electrode member 111 and the second electrode member 112 need to use a conductor or Only the elements (such as the light-emitting element 200) can be electrically connected to each other. In other words, when no conductor or element (such as the light-emitting element 200) is disposed on the first electrode member 111 and the second electrode member 112 of the circuit detection substrate 110, even if the external power is supplied to the first test pad 113 and the second The test pad 114 does not transmit electrical energy between the first electrode member 111 and the second electrode member 112.

The detection device 100 further includes a plurality of first cantilevers 130, and each of the first cantilevers 130 connects the electrode 211 of one of the light-emitting elements 200 and one of the first electrode members 111. The narrowest width 130w of each first cantilever 130 may be between 1 μm and 10 μm, for example, 2 μm or 3 μm. Each first cantilever 130 may include a supporting arm 131, a conductive layer 132 and a conductive pad 133, wherein the supporting arm 131 is an insulator and connects the light emitting element 200 and the conductive pad 133. The conductive layer 132 is a metal layer, and is in contact with and connected to the conductive pad 133 and the electrode 211 of the light-emitting element 200 to electrically connect the conductive pad 133 and the electrode 211. Each conductive pad 133 is arranged on a first electrode member 111 and is electrically connected to the first electrode member 111. Each first electrode member 111 includes a first protruding portion 111p and a first extending portion 111f. The first protrusion 111p protrudes from the first extension 111f, and is connected to a conductive pad 133. Using the conductive layer 132 and the conductive pad 133, the first cantilever 130 can electrically connect the electrode 211 of the light emitting element 200 and the first electrode member 111, so that the electrode 211 and the first electrode member 111 are electrically connected to each other.

The electrode 212 of each light-emitting element 200 is located opposite one of the second electrode members 112, and each of the second electrode members 112 includes a second protrusion 112p and a second extension 112f, wherein the second protrusion 112p protrudes from The second extension 112f. Before detecting these light-emitting elements 200, each electrode 212 and the opposite second electrode member 112 are separated from each other to form a gap G2. The electrode 212 is located on the opposite side of the second protrusion 112p, so the electrode 212 is not connected to the second electrode member 112. Electrical conduction. In other words, before the detection, each light-emitting element 200 is only electrically connected to the first electrode member 111 and not to the second electrode member 112. Therefore, the light-emitting element 200 and the detection device 100 are disconnected at this time. Therefore, even if the first test pad 113 and the second test pad 114 have been energized, each light-emitting element 200 will not emit light at this time.

It is worth mentioning that in the light-emitting element 200 shown in FIG. 1B, since the electrode 212 completely covers the bottom surface of the second semiconducting layer 222, and protrudes from the first semiconducting layer 221, the second semiconducting layer 222 and the light emitting Layer 223, so the electrode 212 has a larger size than other layers (such as the first semiconducting layer 221, the second semiconducting layer 222, and the light emitting layer 223). A lot of the light L32 can be reflected by the electrode 212 made of metal. In this way, the electrode 212 helps to improve the light-emitting efficiency of the light-emitting element 200, as shown in FIG. 1C.

FIG. 1C is a schematic diagram illustrating the simulation of the light output efficiency and the light intensity change of the front viewing angle of the light-emitting element and the existing light-emitting diode in FIG. 1B. Please refer to Fig. 1C first. The polylines M20, M21, M30 and M31 shown in Fig. 1C are drawn by software simulation. The broken lines M20 and M30 are the simulation results of the light-emitting element 200 in FIG. 1B, and the broken lines M21 and M31 are the simulation results of the existing light-emitting diodes. The main difference between the existing light-emitting diode and the light-emitting element 200 lies in the electrode 212 With or without. In other words, the above-mentioned existing light emitting diodes do not have the large-sized electrodes 212 as shown in FIG. 1B.

The two vertical axes of Figure 1C respectively represent the light efficiency (left vertical axis) and the light intensity change at the normal viewing angle (right vertical axis), where the normal viewing angle light intensity change represents the light intensity at a viewing angle of zero degree (0D) The position where the viewing angle is zero degrees corresponds to the position of the optical axis of both the light-emitting element 200 and the existing light-emitting diode. In other words, the above-mentioned change in light intensity at the normal viewing angle is the result of analog measurement of the light intensity of both the light-emitting element 200 and the existing light-emitting diode on their respective optical axes. The state A, the state B, and the state C shown on the horizontal axis of FIG. 1B respectively represent the conditions of the light-emitting element 200 and the existing light-emitting diode during the analog measurement, which are shown in the following table (1). State A A single light-emitting element with a passivation layer on top, but no metal wiring (for example, electrode 211 and conductor layer 132) State B A single light-emitting element, on which a protective layer and metal wiring (such as electrode 211 and conductor layer 132) are arranged State C A pair of adjacent light-emitting elements, wherein a protective layer and metal wiring (for example, electrode 211 and conductor layer 132) are arranged above the pair of light-emitting elements Table I)

According to the broken lines M20 and M21 shown in FIG. 1C, the light extraction efficiency of the light-emitting element 200 is generally better than that of existing light-emitting diodes. The light-exiting efficiency of the light-emitting element 200 in states A, B, and C are 61.97% and 49.45, respectively. % And 47.88%. In terms of changes in the light intensity at the normal viewing angle, Fig. 1C uses the state A as a reference to compare the changes in the normal viewing angle light intensity of the light-emitting element 200 and the existing light-emitting diodes in the states B and C, and the normal viewing angle light intensity of the states A to C. The change satisfies the following mathematical formulas (1), (2) and (3). △IA=Ia/Ia………………………………………………………………………… (1) △IB=Ib/Ia………………………………………………………………(2) △IC=Ic/Ia………………………………………………………………(3)

ΔIA is the change in the light intensity at the normal viewing angle in state A, ΔIB is the change in light intensity at the normal viewing angle in state B, and ΔIC is the change in light intensity at the normal viewing angle in state C. Ia is the normal viewing angle light intensity in state A, Ib is the normal viewing angle light intensity in state B, and Ic is the normal viewing angle light intensity in state C. In addition, it can be known from the mathematical formula (1) that the light intensity changes of the front viewing angle of the light-emitting element 200 and the existing light-emitting diode in the state A are both 1.

According to the broken lines M30 and M31 shown in FIG. 1C, in the state B and the state C, the change in the light intensity of the front viewing angle of the light emitting element 200 is greater than that of the conventional light emitting diode. In other words, even if the light-emitting element 200 includes the electrode 211 and the conductor layer 132, the light intensity at the normal viewing angle of the light-emitting element 200 will not be greatly attenuated, and it is also greater than that of the existing light-emitting diode. It can be seen that the light-emitting element 200 has better light extraction efficiency and light intensity at a normal viewing angle than existing light-emitting diodes.

2A to 2J are schematic cross-sectional views showing the manufacturing method of the light-emitting element and the detection device in FIG. 1B, wherein FIGS. 2A to 2J illustrate the manufacture of a single light-emitting element 200 as an example, and there is no limitation to the light-emitting element 200. Quantity. 2A, in the manufacturing method of the detection device 100 and the light-emitting element 200, first, a growth substrate 180 and a light-emitting structure 20 formed on the growth substrate 180 are provided. The method of forming the light-emitting structure 20 includes forming the light-emitting structure 20 on the growth substrate 180. The first semiconductor layer 221i, the light emitting layer 223i, the second semiconductor layer 222i, the conductor layer 240, and the metal layer 210 are sequentially formed. Therefore, the light emitting structure 20 includes a first semiconducting layer 221i, a light emitting layer 223i, a second semiconducting layer 222i, a conductor layer 240 and a metal layer 210. In addition, the growth substrate 180 has a surface 181, and the light emitting structure 20 is formed on the surface 181.

The growth substrate 180 may be a single crystal substrate, such as a sapphire substrate or a silicon substrate, and the first semiconductor layer 221i, the light emitting layer 223i, and the second semiconductor layer 222i may be formed by epitaxial growth, such as metal organic chemical gas. Phase deposition (Metal Organic Chemical Vapor Phase Deposition, MOCVD) or molecular beam epitaxy (Molecular Beam Epitaxy, MBE). The conductor layer 240 may be a transparent conductive layer, which may be made of metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO) Or indium germanium zinc oxide (IGZO). Both the conductor layer 240 and the metal layer 210 can be made by physical vapor deposition (Physical Vapor Deposition, PVD) or chemical vapor deposition (Chemical Vapor Deposition, CVD), wherein the aforementioned physical vapor deposition may include sputtering or evaporation. .

Please refer to FIG. 2B. Next, a mold layer 290 is formed on the light emitting structure 20, which has a plurality of through holes T29 exposing the light emitting structure 20 (only one is shown in FIG. 2B). Specifically, the method of forming the model layer 290 may include forming a plurality of photoresist patterns 291 and 292 stacked on each other on the metal layer 210. That is, the model layer 290 may be a photoresist after development and includes the photoresist patterns 291 and 292, The thickness 291t of the photoresist pattern 291 may be between 1 μm and 5 μm, and the thickness 292t of the photoresist pattern 292 may be between 1 μm and 5 μm. Each of the photoresist patterns 291 and 292 has a plurality of openings. Taking FIG. 2B as an example, the photoresist pattern 291 has a plurality of openings 291h (only one is shown in FIG. 2B), and the photoresist pattern 291 has a plurality of openings 292h, wherein the through hole T29 is connected to each other by an opening 291h and an opening 292h. And formed. In other words, one of the openings 291h is aligned with one of the openings 292h, thereby forming the through hole T29. Therefore, each through hole T29 is formed by the openings 291h and 292h of at least two layers of photoresist patterns 291 and 292 communicating with each other.

Since the model layer 290 can be a photoresist after development, the openings 291h and 292h can be formed by exposure and development. In addition, it should be noted that in this embodiment, the model layer 290 includes two layers of photoresist patterns 291 and 292, but in other embodiments, the model layer 290 may also include more than two layers of photoresist patterns. Therefore, the photoresist patterns 291 and 292 included in the model layer 290 in FIG. 2B are only examples, and are not used to limit the number of photoresist patterns included in the model layer 290.

Please refer to FIG. 2C. Next, a plurality of first electrode members 111 and a plurality of second electrode members 112 are formed on the model layer 290, wherein the first electrode members 111 contact and connect to the light emitting structure 20 through the through holes T29, respectively. The second electrode members 112 extend into the openings 292h, but do not extend to the light emitting structure 20, and the photoresist pattern 291 separates the second electrode member 112 from the light emitting structure 20, so the second electrode member 112 will not touch Luminescent structure 20. The portion of the first electrode member 111 extending into the through hole T29 will form a first protruding portion 111p, and the first electrode member 111 on the photoresist pattern 292 will form a first extension portion at the portion other than the through hole T29 and the opening 292h 111f. Similarly, the part of the second electrode member 112 that extends into the opening 292h will form a second protrusion 112p, and the second electrode member 112 on the photoresist pattern 292 will form a second part outside the through hole T29 and the opening 292h. Extension 112f.

The method of forming the first electrode member 111 and the second electrode member 112 may include deposition, lithography, and etching, wherein the deposition may be physical vapor deposition (PVD), such as evaporation or sputtering. Therefore, the first electrode member 111 and the second electrode member 112 may conformally cover the model layer 290. That is to say, both the first electrode member 111 and the second electrode member 112 are thin films that can cover the model layer 290 as the surface of the model layer 290 fluctuates, and they have a substantially uniform thickness (constant thickness). Inside the hole T29 and the opening 292h, as shown in FIG. 2C.

2D, after forming the first electrode member 111 and the second electrode member 112, an insulating layer 230 is formed on the first electrode member 111, the second electrode member 112, and the model layer 290, wherein the insulating layer 230 can be fully Covers the first electrode part 111, the second electrode part 112 and the model layer 290. The insulating layer 230 may be made of oxide or nitride, such as silicon oxide or silicon nitride. In addition, the insulating layer 230 can be formed by chemical vapor deposition (CVD), so the insulating layer 230 can also conformally cover the first electrode member 111, the second electrode member 112, and the model layer 290, as shown in FIG. 2D Show.

2E, after the insulating layer 230 is formed, the first electrode parts 111 and the second electrode parts 112 are fixed to the carrier substrate 119, wherein the first electrode parts 111 and the second electrode parts 112 are all located on the carrier substrate Between 119 and the growth substrate 180, the constituent material of the carrier substrate 119 may be the same as the constituent material of the growth substrate 180, such as a sapphire substrate. Alternatively, the carrier substrate 119 may also be a glass plate. Specifically, a connecting layer 140 may be formed between the carrier substrate 119 and the insulating layer 230, which is, for example, glue, and the connecting layer 140 is bonded between the carrier substrate 119 and the insulating layer 230 and fills all the through holes T29. With opening 292h. In this way, the connecting layer 140 can fix the first electrode components 111 and the second electrode components 112 on the carrier substrate 119. In addition, the model layer 290, the first electrode member 111, the second electrode member 112, and the insulating layer 230 in FIG. 2E are the model layer 290, the first electrode member 111, the second electrode member 112, and the insulating layer 230 in FIG. 2D. The result after invert and mirror flip.

2E and 2F, after the first electrode member 111 and the second electrode member 112 are fixed on the carrier substrate 119, the growth substrate 180 is removed. The method of removing the growth substrate 180 may be laser lift -off) or etching. Afterwards, a part of the light-emitting structure 20 is removed to separate a plurality of light-emitting elements 200i and a plurality of residual portions 200f (one is shown in FIG. 2F). The method for removing a part of the light-emitting structure 20 may be to perform lithography on the light-emitting structure 20 And etching process. Since both the light-emitting element 200i and the residual portion 200f are formed by the same light-emitting structure 20 by lithography and etching, the film stacks of both the light-emitting element 200i and the residual portion 200f are the same. For example, both the light emitting element 200i and the residual portion 200f include a first semiconducting layer 221, a second semiconducting layer 222, and a light emitting layer 223, wherein the first semiconducting layer 221 and the second semiconducting layer 222 are formed by the first semiconducting layer 221 and the second semiconducting layer 222 respectively. The semiconducting layer 221i and the second semiconducting layer 222i are formed, and the light emitting layer 223 is formed of the light emitting layer 223i.

The light emitting element 200i further includes an electrode 212 and a conductive layer 241, and the residual portion 200f further includes a conductive pad 133, wherein the conductive pad 133 includes a first conductive layer 133a and a second conductive layer 133b. The conductive layer 241 and the first conductive layer 133a are both formed by the same conductive layer 240 by lithography and etching, while the electrode 212 and the second conductive layer 133b are both formed by the same metal layer 210 by lithography and etching. Therefore, the conductive layer 241 and the first conductive layer 133a may be transparent conductive layers, and the electrode 212 and the second conductive layer 133b may be metal layers. Therefore, in addition to the light-emitting element 200i, the above-mentioned lithography and etching process will retain other parts of the metal layer 210 and other parts of the conductive layer 240, for example, retain the part of the metal layer 210 (ie, the second conductive layer 133b) overlapping the first electrode member 111 And part of the conductor layer 240 (ie, the first conductor layer 133a). In addition, each light-emitting element 200i is located opposite to the adjacent first electrode member 111 and second electrode member 112, and the electrode 212 of each light-emitting element 200i is located opposite to the second electrode member 112 and does not contact the second electrode member 112.

Please refer to FIG. 2F and FIG. 2G. Then, a part of the residual portion 200f is removed. The first semiconducting layer 221, the second semiconducting layer 222, and the light-emitting layer 223 of the residual portion 200f are all removed to retain these residual portions 200f The conductive pad 133 in the middle, and the method of removing the first semiconducting layer 221, the second semiconducting layer 222 and the light emitting layer 223 may be etching. In addition, in the process of removing part of the residual portion 200f by etching, a photoresist layer (not shown) may be formed on the light-emitting element 200i in advance, which completely covers the light-emitting element 200i, but exposes the entire residual portion 200f. Therefore, in the process of etching the residual portion 200f, the photoresist layer can protect the entire light emitting element 200i to prevent the first semiconducting layer 221, the second semiconducting layer 222 and the light emitting layer 223 of the light emitting element 200i from being eroded. After removing part of the remaining portion 200f, the photoresist layer is removed.

Please refer to FIG. 2H. After that, a plurality of support arms 131 and a plurality of protective layers 131a and 131b are formed on the model layer 290 (one is shown in FIG. 2H), wherein the support arms 131, the protective layers 131a and 131b may be made of the same layer The insulating layer is formed after lithography and etching. The insulating layer can be oxide or nitride, such as silicon oxide or silicon nitride, and can be formed by chemical vapor deposition. Therefore, the supporting arms 131, the protective layers 131a and 131b do not overlap with each other, and conformally cover the model layer 290, the light emitting element 200i and the conductor pad 133. Each support arm 131 is formed on the adjacent light-emitting element 200i and the conductor pad 133, and covers a part of the light-emitting element 200i and a part of the conductor pad 133. For example, the support arms 131 cover the sidewalls and upper surfaces of the light emitting element 200i and the conductive pad 133 facing each other, wherein each support arm 131 further connects the adjacent light emitting element 200i and the conductive pad 133, as shown in FIG. 2H.

The protective layers 131a are formed on the conductive pads 133, and the protective layers 131b are formed on the light-emitting elements 200i. The protective layer 131a covers part of the sidewall and part of the upper surface of the conductive pad 133, and the protective layer 131b covers the light-emitting element 200i. Part of the side wall and part of the upper surface. The protective layer 131b and the supporting arm 131 covering the same light-emitting element 200i will form an opening H20, and the opening H20 will expose a part of the first semiconductor layer 221. The supporting arms 131 and the protective layers 131a will partially cover the model layer 290, so the supporting arms 131 and the protective layer 131a will expose a part of the model layer 290 and not fully cover the entire model layer 290.

Please refer to FIG. 2H and FIG. 2I. Next, a plurality of first cantilevers 130 and a plurality of electrodes 211 are formed. The method of forming the first cantilevers 130 includes forming a conductive layer 132 on the supporting arm 131 and the conductive pad 133, and forming a light emitting An electrode 211 is formed on the element 200i. The electrode 211 is formed in the opening H20 and covers the first semiconducting layer 221 located in the opening H20. The conductive layers 132 and the electrodes 211 may be formed by the same metal layer 210 (see FIG. 2E) after lithography and etching. In the adjacent conductive pad 133 and the light emitting element 200, the conductive layer 132 extends from the conductive pad 133 along the support arm 131 to the electrode 211, and can conformally cover the support arm 131. After the first cantilever 130 and the electrode 211 are formed, the circuit detection substrate 110 and the plurality of light-emitting elements 200 are substantially completed.

Please refer to FIGS. 2I and 2J. Then, the mold layer 290 is removed, so that a gap G2 is formed between the electrode 212 of each light-emitting element 200 and the second electrode member 112 opposite to it. The method of removing the model layer 290 may be ashing. That is, the model layer 290 can be removed with oxygen plasma. Alternatively, a photoresist liquid can also be used to remove the model layer 290. So far, the detection device 100 has been generally manufactured. Each light-emitting element 200 can be connected to the first protrusion 111p of one of the first electrode members 111 via the first cantilever 130, and the first cantilever 130 can electrically connect the electrode 211 of the light-emitting element 200 and the first electrode member 111. After the model layer 290 is removed, each electrode 212 and the second electrode member 112 opposite to each other are separated from each other to form a gap G2, so that the light-emitting element 200 only uses the first cantilever 130 to connect to the circuit detection substrate 110. From the perspective of FIG. 2J, the light emitting element 200 is suspended above the circuit detection substrate 110.

2J, the shortest distance between the electrode 212 and the second electrode member 112, that is, the distance D2 between the electrode 212 and the second protrusion 112p, will be substantially equal to the thickness 291t of the photoresist pattern 291 (see Figure 2B). Therefore, in this embodiment, the distance D2 may be between 1 micrometer and 5 micrometers. It can be seen that the shortest distance between the electrode 212 and the second electrode member 112, that is, the distance D2, can be determined by the thickness 291t of the photoresist pattern 291.

FIG. 3A is a schematic flowchart of the detection method of the detection device in FIG. 1B. Please refer to FIG. 1B and FIG. 3A. The detection method of this embodiment is performed after the detection device 100 is completed. Therefore, in this detection method, first, step S301 is performed to provide a circuit detection substrate 110, a plurality of light-emitting elements 200, and a plurality of first cantilevers 130, that is, a detection device 100 and a plurality of light-emitting elements 200 as shown in FIG. 1B are provided. . In step S301, each light-emitting element 200 has been disposed on the circuit detection substrate 110, wherein the electrode 212 of each light-emitting element 200 and the second electrode member 112 opposite to each other are separated from each other to form a gap G2, and each first cantilever 130 is connected to one of them. The light-emitting element 200 and one of the first electrode members 111 are electrically connected to the electrode 211 of the light-emitting element 200 and the first electrode member 111.

3B to 3D illustrate schematic cross-sectional views of the detection method in FIG. 3A. Please refer to FIG. 1B, FIG. 3A and FIG. 3B. Then, step S302 is executed to make the capturing member 310 press a plurality of light-emitting elements 200 (as shown in FIG. 1B). The light-emitting elements 200 include defective light-emitting elements 200b and qualified light-emitting elements. Element 200g (as shown in Figure 3B). Both the qualified light emitting element 200g and the defective light emitting element 200b are light emitting elements 200, but the qualified light emitting element 200g is a normal light emitting element 200 and can emit light, but the defective light emitting element 200b is a defective light emitting element 200 and cannot emit light. The pressing of the capturing element 310 on the light-emitting elements 200 enables the electrodes 212 to contact the second protrusions 112p of the second electrode elements 112 respectively, so that the electrodes 212 can be electrically connected to the second electrode elements 112.

The capturing member 310 may be made of polydimethylsiloxane (PDMS), that is, the capturing member 310 may be a PDMS stamp and has adhesiveness. The capturing element 310 may have a plurality of capturing heads 312, and the end surface 312a of each capturing head 312 is adhesive, so the light emitting element 200 (including the qualified light emitting element 200g and the unqualified light emitting element 200b) can be temporarily fixed on the end surface 312a on. The pick-up heads 312 can be arranged in an array, and each pick-up head 312 can be aligned with a light-emitting element 200 disposed on the circuit detection substrate 110, that is, the pick-up heads 312 can be aligned with a plurality of light-emitting elements 200 one-to-one .

It should be noted that, in the embodiment shown in FIG. 3B, the capturing member 310 is a PDMS stamp, but in other embodiments, the capturing member 310 may also be a vacuum capturing member, which has a plurality of vacuum suction Therefore, each capturing head 312 can also be changed to a vacuum nozzle, and the capturing member 310 is not limited to a PDMS stamp. In addition, in this embodiment, all the capturing heads 312 of the capturing member 310 can only be aligned with some of the light-emitting elements 200, and not all the light-emitting elements 200. In other words, the number of all the capturing heads 312 of the capturing element 310 is less than the number of all the light-emitting elements 200 disposed on the circuit detection substrate 110.

Then, step S303 is performed to energize the at least one first electrode member 111 and the at least one second electrode member 112 so that the plurality of qualified light emitting elements 200 g of the light emitting elements 200 pressed by the capturing element 310 emit light L32. An external power source (such as a DC power supply) can be electrically connected to the first test pad 113 and the second test pad 114 (see FIG. 1A) to supply power to the first test pad 113 and the second test pad 114, so that all the first electrodes The element 111 is energized with all the second electrode elements 112.

Due to the compression of the light-emitting elements 200 by the capturing element 310, the electrodes 212 of the light-emitting elements 200 are electrically connected to the second electrode elements 112, and the first cantilever 130 is electrically connected to the electrodes 211 of the light-emitting element 200 and the first An electrode member 111, so the electrodes 211 and 212 of the pressed light-emitting elements 200 (including the qualified light-emitting element 200g and the defective light-emitting element 200b) can be electrically connected to the first electrode member 111 and the second electrode member 112, respectively. In this way, the qualified light-emitting elements 200g that are pressed can receive the electric energy of the external power source, thereby emitting light L32.

It should be noted that in the embodiment shown in FIG. 3A, the capturing member 310 compresses the light-emitting elements 200 (including qualified light-emitting elements 200g and unqualified light-emitting elements 200g) before being energized to the first electrode part 111 and the second electrode part 112. Element 200b). However, in other embodiments, the capturing member 310 may also press the light-emitting elements 200 after the first electrode member 111 and the second electrode member 112 are energized. Or, when the capturing element 310 presses the light-emitting elements 200, the first electrode element 111 and the second electrode element 112 are simultaneously energized. Therefore, the sequence of step S302 and step S303 is not limited to FIG. 3A.

When the pressed qualified light-emitting elements 200g emit light, step S304 is executed to measure the number of qualified light-emitting elements 200g, where the number of qualified light-emitting elements 200g is measured based on the light L32 emitted by the qualified light-emitting elements 200g. Specifically, the light sensor 320 can be used to detect the light L32 emitted by the qualified light-emitting elements 200g, where the light sensor 320 is, for example, a charge-coupled device (CCD). When the capturing member 310 is a PDMS stamp, the capturing member 310 may be transparent, and the light sensor 320 may be disposed above the capturing member 310, and the capturing member 310 can detect the emission from these qualified light-emitting elements 200g The light L32. Using the light sensor 320 to detect the light L32, the light sensor 320 can determine how many of the pressed light-emitting elements 200 are emitting light to measure approximately How many qualified light-emitting elements are 200g. Then, step S305 is executed to determine whether the ratio between the number of qualified light-emitting elements 200g and the number of light-emitting elements 200 pressed by the capturing element 310 is greater than the user's set value, such as 0.99.

Referring to FIGS. 3B and 3C, when the ratio between the number of qualified light-emitting elements 200g and the number of light-emitting elements 200 compressed by the capturing element 310 is less than the user's set value (for example, 0.99), step S306 is executed. The light-emitting elements 200 compressed by the extraction member 310 are discarded. That is to say, all the light-emitting elements 200 originally compressed by the extraction member 310, including the qualified light-emitting elements 200g and the unqualified light-emitting elements 200b, are discarded, and all the qualified light-emitting elements 200g and all the unqualified light-emitting elements fixed on the end surface 312a are removed. Component 200b. After that, step S302 to step S305 are executed again to detect a plurality of light-emitting elements 200 again.

When the ratio between the number of qualified light-emitting elements 200g and the number of light-emitting elements 200 pressed by the capturing element 310 is greater than the user's set value (for example, 0.99), step S307 is executed to capture the detected light from the circuit inspection substrate 110 The light-emitting elements 200 pressed by the capturing member 310. In detail, since the end surface 312a of each pickup head 312 is adhesive, the light-emitting elements 200, including the qualified light-emitting element 200g and the defective light-emitting element 200b, can be fixed on the end surfaces 312a of the pickup head 312, respectively.

When the capturing element 310 moves away from the circuit detection substrate 110, the qualified light-emitting elements 200 g and the unqualified light-emitting elements 200 b will follow the capturing element 310 to move away from the circuit detection substrate 110. Since the narrowest width 130w of each first cantilever 130 (see FIG. 1A) can be between 1 micron and 10 micron, such as 2 microns or 3 microns, a plurality of qualified light-emitting elements 200g and unqualified light-emitting elements 200b are connected The first cantilever 130 can be pulled off by the capturing member 310 so that the qualified light emitting element 200 g and the defective light emitting element 200 b fixed on the capturing member 310 can be separated from the circuit inspection substrate 110. In this way, the light-emitting elements 200 pressed by the extraction member 310 can be extracted.

Please refer to FIG. 3D, afterwards, the light-emitting elements 200 (including the qualified light-emitting elements 200g and the unqualified light-emitting elements 200b) are mounted on the element array substrate 330 by using the capturing member 310. The capturing member 310 moves toward the device array substrate 330 until the qualified light emitting elements 200 g and the unqualified light emitting elements 200 b fixed on the capturing heads 312 are all mounted on the device array substrate 330. The device array substrate 330 may include a substrate 331, an adhesive layer 332, and a plurality of electrodes 333a and 333b. The adhesive layer 332 is disposed on the substrate 331 and covers the electrodes 333a and 333b. The substrate 331 may have a plurality of control elements (not shown), such as a transistor, where the transistor may be a thin film transistor (TFT), and the control elements are electrically connected to the electrodes 333a and 333b, respectively. After the qualified light emitting element 200g and the defective light emitting element 200b are mounted on the element array substrate 330, the qualified light emitting element 200g and the defective light emitting element 200b are both fixed on the adhesive layer 332, as shown in FIG. 3D.

Referring to FIG. 3E, a plurality of electrical connection layers 334a and 334b may be formed on the adhesive layer 332, wherein each electrical connection layer 334a is electrically connected to the electrode 211 of one of the qualified light-emitting element 200g and the defective light-emitting element 200b, and each The electrical connection layer 334b electrically connects the electrode 212 of one of the qualified light-emitting element 200g and the defective light-emitting element 200b. In this way, the control elements in the substrate 331 can electrically connect the qualified light-emitting elements 200g and the defective light-emitting elements 200b, thereby controlling the qualified light-emitting elements 200g. So far, a display panel 300 has basically been manufactured. It should be noted that in the embodiment shown in FIG. 3E, the qualified light-emitting element 200g or the defective light-emitting element 200b is mounted on the element array substrate 330 by using the electrical connection layers 334a and 334b. However, the electrical connection means between the qualified light emitting element 200g or the defective light emitting element 200b and the element array substrate 330 is not limited to only the electrical connection layers 334a and 334b.

Based on the above, in the process of mounting the light-emitting element 200 on the element array substrate 330, all the qualified light-emitting elements 200g and all the unqualified light-emitting elements 200b captured by the capturing member 310 at one time are all mounted on the element array substrate 330 . However, among the light-emitting elements 200 captured by the captured element 310, the ratio between the number of qualified light-emitting elements 200g and the number of light-emitting elements 200 captured by the captured element 310 is greater than the user's set value ( For example, 0.99), and the number of defective light-emitting elements 200b is still within the repairable range, which helps maintain or improve the yield of the display panel 300 and reduce the waste of light-emitting elements 200.

In the display panel 300 shown in FIG. 3E, all qualified light-emitting elements 200g emit light L32 of the same color. For example, all qualified light-emitting elements 200g of the display panel 300 are blue light-emitting diodes and can emit blue light L32. Therefore, the display panel 300 can be additionally provided with a color conversion layer to generate three primary colors of light to form a color image. In addition, in the capturing element 310 of FIG. 3D, the distance D31a between two adjacent capturing heads 312 may be equal to the spacing between two adjacent sub-pixels in the display panel 300, and when the capturing element 310 When all the pick-up heads 312 are aligned with the light-emitting elements 200, any light-emitting element 200 (whether it is a qualified light-emitting element 200g or a defective light-emitting element 200b) will not sit between two adjacent pick-up heads 312 , As shown in Figure 3B. However, in other embodiments, when all the capturing heads 312 of the capturing member 310 are aligned with the light emitting elements 200, at least one light emitting element 200 will be located between two adjacent capturing heads 312, as shown in FIG. Shown in 3F.

Referring to FIG. 3F and FIG. 3G, the light-emitting elements 200 disposed on the circuit detection substrate 110 can also be pressed by different capturing elements 310a for inspection, and the difference between the capturing elements 310a and 310 is only: The distance between two adjacent capture heads 312. In detail, when all the pick-up heads 312 are aligned with the light-emitting elements 200, at least one light-emitting element 200 (whether it is a qualified light-emitting element 200g or a defective light-emitting element 200b) is located between two adjacent pick-up heads 312 between. Taking FIG. 3F as an example, a single light-emitting element 200 is located between two adjacent capturing heads 312. However, in other embodiments, two or more light-emitting elements 200 may be located between two adjacent capturing heads 312.

Among the light-emitting elements 200 pressed by the capturing element 310a, when the ratio between the number of qualified light-emitting elements 200 and the number of pressed light-emitting elements 200 is greater than the user's set value (for example, 0.99), use the capture The component 310a mounts the light-emitting elements 200 on the element array substrate 330. When the capturing member 310a mounts the light-emitting elements 200 on the device array substrate 330, the light-emitting elements 201 previously mounted on the device array substrate 330 will be seated between two adjacent capturing heads 312. The light-emitting element 201 is also installed by the capturing member 310a. After that, as in the step shown in FIG. 3E, a plurality of electrical connection layers 334a and a plurality of electrical connection layers 334b (not shown in FIG. 3G) are formed to electrically connect the light-emitting elements 200 and the element array substrate 330, thereby completing the basics of the display panel 300 manufacture.

The light-emitting elements 200 captured by the capturing element 310a can emit light L32 of the same color, and the distance D31b between two adjacent capturing heads 312 of the capturing element 310a may be equal to two adjacent two of the same color. The distance between pixels. The light-emitting element 201 and the light-emitting element 200 located between the two adjacent capture heads 312 are similar, but the main difference is that the colors of the light emitted by the light-emitting elements 201 and 200 are different from each other. For example, the light-emitting element 200 can emit blue light, but the light-emitting element 201 can emit red light, so the capturing member 310a can capture a plurality of light-emitting elements 201 all emitting red light for the first time. After that, the capturing member 310a can capture a plurality of light-emitting elements 200 that all emit blue light for a second time. In this way, by using the capturing member 310a, a display panel including various light-emitting elements 200 and 201 can be manufactured to generate color images.

Based on the above, the detection device 100 can use a variety of capturing elements, such as capturing elements 310 and 310a, to capture different numbers of light-emitting elements 200 at a time, and transfer and mount these light-emitting elements 200 on the device array substrate 330 to Different types of display panels are fabricated, for example, a display panel 300 in which the light-emitting elements 200 are all blue light-emitting diodes, or a display panel in which multiple light-emitting elements 200 are red, green, and blue light-emitting diodes. It can be seen that the same detection device 100 can use different capturing elements (for example, capturing elements 310 and 310a) to meet various requirements of the light-emitting element 200 in terms of transfer, so as to manufacture various types of display panels. In other words, under the condition that the sub-pixel size and pitch (for example, pitch D31a or D31b) of a variety of display panels are substantially the same, as long as the design of the capturing element is changed, the inspection device 100 can be adapted to the display panels. There is no need to change or redesign the detection device 100 to transfer requirements.

4A is a schematic top view of a detection device according to another embodiment of the present invention, and FIG. 4B is a schematic cross-sectional view drawn along the line 4B-4B in FIG. 4A. 4A and 4B, the detection device 400 and the light-emitting element 500 of this embodiment are respectively similar to the detection device 100 and the light-emitting element 200 of the previous embodiment, and the main difference between this embodiment and the previous embodiment is: the light-emitting element 500 is a horizontal light emitting diode, and the detection device 400 includes a plurality of first cantilevers 431 and a plurality of second cantilevers 432. One light emitting element 500 is connected to a first cantilever 431 and a second cantilever 432, and uses the first The cantilever 431 and the second cantilever 432 are connected to the circuit detection substrate 410 of the detection device 400.

A plurality of light-emitting elements 500 can be configured in the detection device 400, and can be light-emitting diodes, where the light-emitting elements 500 can be micro light-emitting diodes (μLED), sub-millimeter light-emitting diodes (mini LED), or a size greater than 100 Micron light emitting diodes. Each light emitting element 500 may include a pair of electrodes 511 and 512, a first semiconducting layer 521, a second semiconducting layer 522, and a light emitting layer 523, where the light emitting layer 523 is sandwiched between the first semiconducting layer 521 and the second semiconducting layer Between 522. The first semiconducting layer 521, the second semiconducting layer 522, and the light emitting layer 523 may be the same as the first semiconducting layer 221, the second semiconducting layer 222, and the light emitting layer 223 in the foregoing embodiment, respectively. The electrodes 511 and 512 may both be metal layers, wherein the electrode 511 may be an anode, and the electrode 512 may be a cathode. In the embodiment of FIG. 4B, the electrodes 511 and 512 are both located on the same side of the light emitting element 500, so the light emitting element 500 is a horizontal light emitting diode.

The circuit detection substrate 410 includes a plurality of first electrode elements 411, a plurality of second electrode elements 412, a first test pad 113, a second test pad 114, a connection layer 140, and a carrier substrate 119, wherein the first electrode elements 411 can be mutually connected. Parallel and connected to the first test pad 113, and the second electrode elements 412 can be parallel to each other and connected to the second test pad 114, so that the first test pad 113 is electrically connected to the first electrode elements 411, and the second test pad 114 is electrically connected to these second electrode members 412. However, the first electrode member 411 and the second electrode member 412 are not in contact with each other, and the first test pad 113 and the second test pad 114 are not in contact with each other.

Each first electrode member 411 includes a first protruding portion 411p, a first extending portion 411f, and a first connecting portion 411c, wherein the first connecting portion 411c and the first protruding portion 411p all protrude from the first extending portion 411f, and The first extension portion 411f is connected between the first connecting portion 411c and the first protruding portion 411p. Each second electrode member 412 includes a second protruding portion 412p, a second extending portion 412f, and a second connecting portion 412c, wherein the second connecting portion 412c and the second protruding portion 412p all protrude from the second extending portion 412f, and The second extending portion 412f is connected between the second connecting portion 412c and the second protruding portion 412p.

Each first cantilever 431 connects the electrode 511 of one of the light-emitting elements 500 and the first connecting portion 411c of one of the first electrode members 411, and each second cantilever 432 connects the electrode 512 of one of the light-emitting elements 500 and one of the second electrodes In the second connecting portion 412c of the member 412, the width 431w of each first cantilever 431 can be between 1 micrometer and 10 micrometers, and the width 432w of each second cantilever 432 can be between 1 micrometer and 10 micrometers. Therefore, the widths 431w and 432w are, for example, 2 micrometers or 3 micrometers, and may be equal to each other or not. In addition, different from the first cantilever 130 in the foregoing embodiment, the first cantilever 431 and the second cantilever 432 are both insulators, so the light-emitting element 500 cannot use the first cantilever 431 and the second cantilever 432 to electrically connect the circuit detection substrate 410.

Before detecting these light-emitting elements 500, the electrode 511 of each light-emitting element 500 is located opposite one of the first electrode members 411, and the electrode 512 of each light-emitting element 500 is located opposite one of the second electrode members 412, wherein the electrode 511 The first protrusion 411p of the first electrode member 411 is aligned, and the electrode 512 is aligned with the second protrusion 412p of the second electrode member 412. The electrodes 511 and 512 of each light-emitting element 500 are separated from the first electrode member 411 and the second electrode member 412, so that a gap G5 is formed between the first electrode member 411 and the second electrode member 412 and the light-emitting element 500 . Since the first cantilever 431 and the second cantilever 432 are both insulators, the light-emitting element 500 and the detection device 400 are disconnected before the detection.

5A to 5I are cross-sectional schematic diagrams of the manufacturing method of the detection device in FIG. 4B, in which FIGS. 5A to 5I illustrate the manufacture of a single light-emitting element 500 as an example, and the number of light-emitting elements 500 is not limited. Referring to FIG. 5A, in the manufacturing method of the detection device 400, first, a plurality of light-emitting elements 500 separated from each other are formed on the growth substrate 180, wherein the light-emitting elements 500 are formed on the surface 181. The manufacturing methods of the light-emitting element 500 and the aforementioned light-emitting element 200 may be substantially the same as each other. For example, in the light-emitting element 500, the materials and formation methods of the first semiconducting layer 521, the second semiconducting layer 522, and the light-emitting layer 523 can be the same as those of the first semiconducting layer 221 and the second semiconducting layer 221 and the second semiconducting layer 523 in the previous embodiment, respectively. The semiconducting layer 222 and the light emitting layer 223, and the materials and forming methods of the electrodes 511 and 512 can be the same as the electrodes 211 and 212 of the previous embodiment. In addition, the light emitting element 500 may further include a protective layer 540 which covers the first semiconducting layer 521, the second semiconducting layer 522 and the light emitting layer 523 and exposes the electrodes 511 and 512. The material and forming method of the protective layer 540 can also be the same as the support arm 131 and the protective layers 131a and 131b of the light-emitting device 200.

Please refer to FIG. 5B. Next, a support layer 580 is formed on the surface 181 of the growth substrate 180. The thickness 580t can be between 3 μm and 6 μm. From the perspective of FIG. 5B, the thickness 580t is close to that of the light-emitting element 500. The overall thickness. The support layer 580 surrounds each light-emitting element 500 and exposes the electrodes 511 and 512 of the light-emitting element 500. The support layer 580 may be a sacrificial material, such as photoresist after development. Referring to FIG. 5C, a plurality of first cantilevers 431 and a plurality of second cantilevers 432 are formed on the support layer 580, wherein the first cantilever 431 and the plurality of second cantilevers 432 can be lithographic and etched by the same insulating layer The insulating layer may be an oxide or nitride formed by chemical vapor deposition, such as silicon oxide or silicon nitride. So far, the light emitting structure 50 is completed, which includes the support layer 580, the plurality of first cantilevers 431, the plurality of second cantilevers 432, and the plurality of light emitting elements 500.

Please refer to FIG. 5D. Next, a model layer 590 is formed on the light emitting structure 50 and the support layer 580. The model layer 590 has a plurality of through holes T59 exposing the light emitting structure 50, wherein the method of forming the model layer 590 may include sequentially forming a plurality of photoresist patterns 591, 592, and 593 stacked on each other on the light emitting structure 50 and the support layer 580, namely The model layer 590 may include photoresist patterns 591, 592, and 593, wherein the height 591t of the photoresist pattern 591 relative to the surface 181 can be between 1 μm and 5 μm, and the height 592t of the photoresist pattern 592 relative to the surface 181 can be Between 1 micron and 3 microns.

Each of the photoresist patterns 591 and 592 has a plurality of openings. Taking FIG. 5D as an example, the photoresist pattern 591 has a plurality of openings 591h, the photoresist pattern 592 has a plurality of openings 592h, and the photoresist pattern 593 has a plurality of openings 593h. The through hole T59 is formed by the openings 591h, 592h, and 593h. Connected to form. In other words, one opening 591h, one opening 592h, and one opening 593h can be aligned with each other to form the through hole T59. Therefore, each through hole T59 may be formed by the openings 591h, 592h, and 593h communicating with each other. In addition, one opening 592h can be aligned with one opening 593h to form a hole H59, wherein the hole H59 only extends to the photoresist pattern 591, and does not extend to the first cantilever 431 or the second cantilever 432.

Please refer to FIG. 5E. Next, a plurality of first electrode members 411 and a plurality of second electrode members 412 are formed on the model layer 590, wherein the first electrode member 411 and the second electrode member 412 are in contact with each other through the through hole T59. The first cantilever 431 and the second cantilever 432 of the light emitting structure 50 are connected. The portions of the first electrode member 411 and the second electrode member 412 extending into the through hole T59 respectively form a first protrusion 411p and a second protrusion 412p. Only the portion of the first electrode member 411 extending into the hole H59 forms a first protrusion 411p, and the portion of the second electrode member 412 extending only into the opening 593h forms a second protrusion 412p. Therefore, the first protrusion 411p penetrates the photoresist patterns 592 and 593 but does not penetrate the photoresist pattern 591, and the second protrusion 412p only penetrates the photoresist pattern 593, but does not penetrate the photoresist patterns 591 and 592 , The first protrusion 411p and the second protrusion 412p are not in contact with the light emitting element 500. The materials and forming methods of the first electrode member 411 and the second electrode member 412 can be the same as those of the first electrode member 111 and the second electrode member 112, so the description will not be repeated.

Referring to FIG. 5F, after the first electrode parts 411 and the second electrode parts 412 are formed, an insulating layer 530 is formed on the first electrode parts 411, the second electrode parts 412, and the model layer 590. The insulating layer 530 can be The first electrode part 411, the second electrode part 412, and the model layer 590 are selectively covered. The constituent material and forming method of the insulating layer 530 can be the same as those of the insulating layer 230 of the foregoing embodiment, so the description will not be repeated. The insulating layer 530 can also conformally cover the first electrode member 411, the second electrode member 412 and the model layer 590.

Referring to FIG. 5G, afterwards, the first electrode parts 411 and the second electrode parts 412 are fixed on the carrier substrate 119, wherein the first electrode parts 411 and the second electrode parts 412 are located on the carrier substrate 119 and the growth substrate 180 between. A connecting layer 140 may be formed between the carrier substrate 119 and the insulating layer 530, and the connecting layer 140 is bonded between the carrier substrate 119 and the insulating layer 530, and can fix the first electrode parts 411 and the second electrode parts 412 to Carrying substrate 119. In addition, the connection layer 140 can also fill all the through holes T59, the holes H59, and the openings 593h.

Please refer to FIGS. 5G and 5H, where the light-emitting structure 50 in FIG. 5H is a result of the light-emitting structure 50 in FIG. 5G being turned upside down. After the first electrode member 411 and the second electrode member 412 are both fixed on the carrier substrate 119, the growth substrate 180 is removed. The method of removing the growth substrate 180 may be laser lift-off or etching. Please refer to FIG. 5H and FIG. 5I. After that, the model layer 590 and part of the light-emitting structure 50 are removed. The part where the light-emitting structure 50 is removed is the support layer 580, so these light-emitting elements 500 will be separated.

The method of removing the support layer 580 and the model layer 590 may be ashing, that is, the support layer 580 and the model layer 590 are removed by using oxygen plasma. Alternatively, a photoresist removing liquid can also be used to remove the support layer 580 and the model layer 590. So far, the detection device 400 and the light-emitting element 500 are generally manufactured. In addition, in the detection device 400 and the light emitting element 500 shown in FIG. 5I, a gap G5 is formed between the first electrode member 411 and the second electrode member 412 and the light emitting element 500, wherein the electrode 511 and the first protrusion The distance D51 between the 411p and the distance D52 between the electrode 512 and the second protrusion 412p can be determined by the heights 591t and 592t of the model layer 590 (see FIG. 5D).

6A to 6B are schematic cross-sectional diagrams showing the detection method of the detection device in FIG. 4B. Referring to FIGS. 5I and 6A, the detection method of this embodiment is performed after the detection device 400 is completed, and is basically the same as the detection method of the previous embodiment: the capturing member 310 is also used to compress the multiple light-emitting elements 500 to allow The electrodes 511 of the pressed light-emitting elements 500 can respectively contact the first protrusions 411p of the plurality of first electrode members 411, and the electrodes 512 can respectively contact the second protrusions 412p of the plurality of second electrode members 412. In this way, the pressed light-emitting elements 500 can be electrically connected to the circuit detection substrate 410 to receive electric energy from the external power source, so that the qualified light-emitting elements 500 can emit light L52.

Since the light-emitting element 500 is connected to the circuit detection substrate 410 by using the first cantilever 431 and the second cantilever 432, in this detection method, not only the circuit detection substrate 410, the plurality of light-emitting elements 500 and the plurality of first cantilevers 431 are provided, Moreover, a plurality of second cantilevers 432 are also provided, that is, the detection device 100 as shown in FIG. 5I is provided. At this time, each second cantilever 432 connects one of the light-emitting elements 500 and one of the second electrode members 412, and the electrodes 511 and 512 of each light-emitting element 500 are located opposite to the first electrode member 411 and the second electrode member 412, and The first electrode member 411 and the second electrode member 412 are separated from each other.

Please refer to FIG. 6A. Next, the capturing element 310 is made to press the plurality of light-emitting elements 500, so that the plurality of electrodes 511 of the light-emitting elements 500 respectively contact the first protrusions 411p of the plurality of first electrode members 411, and the plurality of The electrodes 512 respectively contact the second protrusions 412p of the plurality of second electrode members 412. In this way, the electrode 511 of the light-emitting element 500 is electrically connected to the first electrode member 411, and the electrode 512 is electrically connected to the second electrode member 412. In addition, in addition to the capturing element 310, the capturing element 310a of FIG. 3F can also be made to press a plurality of light-emitting elements 500, so the light-emitting elements 500 on the circuit detection substrate 410 are not limited to being pressed by the capturing element 310.

After that, power is applied to at least one first electrode member 411 and at least one second electrode member 412, so that a plurality of qualified light emitting elements 500 of the light emitting elements 500 pressed by the capturing element 310 emit light L52. It should be noted that although in this embodiment, the capturing member 310 compresses the light-emitting elements 500 before being energized to the first electrode member 411 and the second electrode member 412, in other embodiments, the capturing member 310 is also The light-emitting elements 500 can be pressed after being energized to the first electrode member 411 and the second electrode member 412. Or, when the capturing element 310 presses the light-emitting elements 500, the first electrode element 411 and the second electrode element 412 are simultaneously energized. Therefore, there is no restriction on the execution sequence of the above two steps of energization and compression.

When the qualified light-emitting elements 500 that are pressed emit light, the number of the qualified light-emitting elements 500 is measured according to the light L52 emitted by the light-emitting elements 500. Similar to the foregoing embodiment, the light sensor 320 can be used to detect the light L32 emitted by the light-emitting elements 500 to measure the number of the light-emitting elements 500 emitting light L52, so as to know the pressure of the light Among the elements 500, how many qualified light-emitting elements 500 are there. After that, it is determined whether the ratio between the number of qualified light-emitting elements 500 and the number of light-emitting elements 500 pressed by the capturing element 310 is greater than a user set value (for example, 0.99).

When the ratio between the number of qualified light-emitting elements 500 and the number of light-emitting elements 500 pressed by the captured part 310 is less than the user setting value (for example, 0.99), discard the light-emitting elements 500 pressed by the captured part 310 . Therefore, all the light-emitting elements 500 previously pressed by the extraction member 310 at one time, regardless of whether they are qualified or not, are all discarded, and the light-emitting elements 500 fixed on the end faces 312a of each extraction head 312 are removed. Then, the capturing element 310 is forced to press the other multiple light-emitting elements 500 on the circuit detection substrate 410 to perform the detection again.

When the ratio between the number of qualified light-emitting elements 500 and the number of light-emitting elements 500 pressed by the captured part 310 is greater than the user setting value (for example, 0.99), the captured part 310 is captured from the circuit detection substrate 410 The light-emitting elements 500 are compressed, and the light-emitting elements 500 are mounted on the element array substrate 330 (see FIG. 3D). The end surface 312a of each extraction head 312 has adhesiveness, so the light emitting elements 500, including qualified and unqualified light emitting elements 500, can be respectively fixed on the end surfaces 312a of the extraction heads 312. When the capturing element 310 moves away from the circuit detection substrate 410, the light-emitting element 500 will follow the capturing element 310 to move away from the circuit detection substrate 410. Since the width 431w of each first cantilever 431 can be between 1 μm and 10 μm, and the width 432w of each second cantilever 432 can be between 1 μm and 10 μm, the first cantilever 431 of the light-emitting element 500 is connected And 432 can be pulled off by the capturing member 310, so that the light emitting element 500 fixed on the capturing member 310 can be separated from the circuit detection substrate 410.

Since the light-emitting element 500 is a horizontal light-emitting diode, that is, the electrodes 511 and 512 are both located on the same side of the light-emitting element 500, the light-emitting elements 500 can be assembled by using solder (not shown) and flip chip. Set on the element array substrate 330. In addition, each of the above-mentioned solders can be connected between one of the electrodes (for example, electrode 511 or 512) of the light-emitting element 500 and one of the electrodes (for example, electrode 333a or 333b) of the element array substrate 330, and these solders can connect the light-emitting element 500 It is directly fixed on the element array substrate 330. These solders can be used to mount the light-emitting elements 500 on the element array substrate 330 by means of pressure and heating. In detail, in the process of mounting the light-emitting elements 500 on the device array substrate 330 by flip-chip, pressure can be applied to the light-emitting elements 500 and the solder can be heated to melt the solder so that the light-emitting elements 500 can be soldered to On the element array substrate 330.

It can be seen that the element array substrate 330 can be connected to the light-emitting element 500 without the adhesive layer 332. In this way, not only the cost of forming the adhesive layer 332 can be omitted, but also there is no need to make electrical connection layers 334a and 334b to electrically connect the light-emitting element 500 and the element array substrate 330, thereby shortening the time for transferring and mounting the light-emitting element 500 to the element array substrate 330 . After the light-emitting elements 500 are mounted on the element array substrate 330, the display panel containing the light-emitting elements 500 is basically manufactured.

In summary, the above-mentioned cantilever (such as the first cantilever) can be used to suspend multiple light-emitting elements above the circuit detection substrate to separate these light-emitting elements and the circuit detection substrate from each other, so that the light-emitting elements and the circuit detection substrate can be separated from each other. Intermittently form a disconnection. In the process of detecting these light-emitting elements, the light-emitting elements can be pressed so that the electrodes of the pressed light-emitting elements can contact the electrode member (for example, the second electrode member). In this way, the present invention can perform detection by pressing the light-emitting element without using a probe. Therefore, compared with the existing electrical detection equipment, the detection method of the present invention is suitable for detecting small-sized light-emitting diodes. Body, such as miniature light emitting diode.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of invention protection shall be subject to the scope of the attached patent application.

20, 50: light-emitting structure 100, 400: detection device 110, 410: circuit inspection substrate 111, 411: first electrode part 111f, 411f: first extension 111p, 411p: the first protrusion 112, 412: second electrode part 112f, 412f: second extension 112p, 412p: second protrusion 113: The first test pad 114: second test pad 119: Carrier substrate 130, 431: first cantilever 130w: the narrowest width 131: Support arm 131a, 131b, 540: protective layer 132, 240, 241: Conductor layer 133: Conductor pad 133a: first conductor layer 133b: second conductor layer 140: connection layer 180: growth substrate 181: Surface 200, 200i, 201, 500: light-emitting element 200b: unqualified light emitting element 200f: residue 200g: qualified light-emitting element 210: Metal layer 211, 212, 333a, 333b, 511, 512: electrodes 221, 221i, 521: the first semiconducting layer 222, 222i, 522: second semiconducting layer 223, 223i, 523: light-emitting layer 230, 530: insulation layer 290, 590: Model layer 291, 292, 591, 592, 593: photoresist pattern 291h, 292h, 591h, 592h, 593h, H20: opening 292t, 292t, 580t: thickness 300: display panel 310, 310a: captured pieces 312: Capture Head 312a: end face 320: light sensor 330: Element array substrate 331: Substrate 332: Adhesive Layer 334a, 334b: electrical connection layer 411c: The first connection part 412c: second connection part 431w, 432w: width 432: second cantilever 580: support layer 591t, 592t: height D2, D51, D52: distance D31a, D31b: pitch G2, G5: gap H59: Hole L32, L52: light M20, M21, M30, M31: broken line S301, S302, S303, S304, S305, S306, S307: steps T29, T59: Through hole

FIG. 1A is a schematic top view of a detection device according to at least one embodiment of the invention. FIG. 1B is a schematic cross-sectional view drawn along the line 1B-1B in FIG. 1A. FIG. 1C is a schematic diagram illustrating the simulation of the light output efficiency and the light intensity change of the front viewing angle of the light-emitting element and the existing light-emitting diode in FIG. 1B. 2A to 2J are schematic cross-sectional views showing the manufacturing method of the light-emitting element and the detection device in FIG. 1B. FIG. 3A is a schematic flowchart of the detection method of the detection device in FIG. 1B. 3B to 3G illustrate schematic cross-sectional views of the detection method in FIG. 3A. 4A is a schematic top view of a detection device according to another embodiment of the invention. 4B is a schematic cross-sectional view drawn along the line 4B-4B in FIG. 4A. 5A to 5I are schematic cross-sectional views showing the manufacturing method of the detection device in FIG. 4B. 6A to 6B are schematic cross-sectional diagrams showing the detection method of the detection device in FIG. 4B.

100: detection device

110: Circuit detection substrate

111: The first electrode part

111f: first extension

111p: the first protrusion

112: The second electrode part

112f: second extension

112p: second protrusion

119: Carrier substrate

130: first cantilever

131: Support arm

132, 241: Conductor layer

133: Conductor pad

140: connection layer

200: light-emitting element

211, 212: Electrodes

221: first semiconducting layer

222: second semiconducting layer

223: light-emitting layer

G2: gap

Claims (10)

A method for manufacturing a detection device includes: Providing a growth substrate and a light emitting structure formed on the growth substrate; Forming a model layer on the light emitting structure, which has a plurality of through holes exposing the light emitting structure; Forming a plurality of first electrode members and a plurality of second electrode members on the model layer, wherein the first electrode members are respectively in contact with and connected to the light emitting structure through the through holes; Fixing the first electrode components and the second electrode components on a carrier substrate; Remove the growth substrate; After the growth substrate is removed, part of the light-emitting structure is removed to separate a plurality of light-emitting elements, wherein each light-emitting element is located opposite to the adjacent first electrode member and the second electrode member, and each light-emitting element An electrode of the element is located on the opposite side of one of the second electrode elements and does not contact the second electrode element; and The model layer is removed so that a gap is formed between the electrode of each light-emitting element and the opposite second electrode member, wherein each light-emitting element is connected to one of the first electrode members via a first cantilever. The method for manufacturing a detection device according to claim 1, wherein the method for forming the model layer includes forming a plurality of photoresist patterns stacked on each other, each photoresist pattern has a plurality of openings, and each through hole is formed by at least The openings of the two-layer photoresist patterns communicate with each other and are formed. The method for manufacturing a detection device according to claim 1, wherein the method of forming the light-emitting structure includes sequentially forming a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a semiconductor layer on the growth substrate. Conductor layer and a metal layer, and the method of removing part of the light-emitting structure includes performing a lithography and etching process on the light-emitting structure, wherein the lithography and etching process retains a portion of the metal layer overlapping with the first electrode members And part of the conductor layer. The manufacturing method of the detection device according to claim 1 or 2, wherein the method of forming the light-emitting structure includes: Forming a plurality of the light-emitting elements separated from each other on the growth substrate; Forming a support layer on the growth substrate, wherein the support layer surrounds each of the light-emitting elements and exposes the electrodes of the light-emitting elements; and A plurality of the first cantilevers and a plurality of second cantilevers are formed on the supporting layer, wherein each of the light-emitting elements is connected to one of the first cantilevers and one of the second cantilevers; The method of removing part of the light emitting structure includes removing the support layer. A detection method of a detection device includes: A circuit detection substrate, a plurality of light-emitting elements, and a plurality of first cantilevers are provided, wherein the circuit detection substrate includes a plurality of first electrode parts and a plurality of second electrode parts, and each light-emitting element is arranged on the circuit detection substrate, and There is a pair of electrodes, wherein one of the electrodes of each light-emitting element and the opposite second electrode member are separated from each other to form a gap, and each of the first cantilevers connects one of the light-emitting elements and one of the first electrode members ； Making a capturing element press a plurality of the light-emitting elements, so that the plurality of the electrodes are respectively in contact with the plurality of the second electrode elements; Power is applied to at least one of the first electrode element and at least one of the second electrode element, so that a plurality of qualified light-emitting elements among the light-emitting elements pressed by the capturing element emit a light; and According to the light, the number of qualified light-emitting elements is measured. The detection method of the detection device described in claim 5 further includes: A plurality of second cantilevers are provided, wherein each of the second cantilevers is connected to one of the light-emitting elements and one of the second electrode elements, and the electrodes of each of the light-emitting elements are respectively located at the first electrode element and the second electrode element Opposite to and separated from the first electrode member and the second electrode member; and When the capturing element presses a plurality of the light-emitting elements, the electrodes of the light-emitting elements contact the first electrode elements and the second electrode elements respectively. The detection method of the detection device according to claim 5, wherein when the ratio between the number of the qualified light-emitting elements and the number of the light-emitting elements pressed by the capturing element is greater than 0.99, the line is detected The substrate captures the light-emitting elements pressed by the capture member, and uses the capture member to mount the light-emitting elements on an element array substrate. The detection method of the detection device according to claim 5, wherein after power is applied to at least one of the first electrode element and at least one of the second electrode element, the capturing element is made to press a plurality of the light emitting elements. The detection method of the detection device according to claim 5, wherein before power is applied to at least one of the first electrode element and at least one of the second electrode element, the capturing element is made to press a plurality of the light emitting elements. The detection method of the detection device according to claim 5, wherein when the capturing element presses a plurality of the light-emitting elements, at least one of the first electrode elements and at least one of the second electrode elements are simultaneously energized.

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