CN102201511B - Light emitting diode structure and manufacturing method thereof - Google Patents
Light emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN102201511B CN102201511B CN 201010144359 CN201010144359A CN102201511B CN 102201511 B CN102201511 B CN 102201511B CN 201010144359 CN201010144359 CN 201010144359 CN 201010144359 A CN201010144359 A CN 201010144359A CN 102201511 B CN102201511 B CN 102201511B
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Abstract
The invention discloses a light emitting diode structure and a manufacturing method thereof. The light emitting diode structure comprises a p type electrode, a jointing substrate, a p type semiconductor layer, a luminous layer, an n type semiconductor layer, an epitaxial growing substrate and an n type electrode, wherein the jointing substrate is arranged on the p type electrode, the p type semiconductor layer is arranged on the jointing substrate, the luminous layer is arranged on the p type semiconductor layer, the n type semiconductor layer is arranged on the luminous layer, the epitaxial growing substrate is arranged on the n type semiconductor layer, and includes an opening which penetrates through the epitaxial growing substrate, and the n type electrode is arranged in the opening, and is electrically connected with the n type semiconductor layer.
Description
Technical field
The present invention relates to a kind of light-emitting component, and particularly relate to a kind of light-emitting diode (LED) structure and manufacture method thereof.
Background technology
At present, when making gallium nitride series (GaN-based) light-emitting diode of vertical stratification, usually grow up after epitaxial growth substrate (Epitaxial Growth Substrate) is upper at epitaxial light emission structure, utilize laser lift-off (Laser Lift-off) technology, remove this growth substrate.The growth substrate generally adopts by aluminium oxide (Al at present
2O
3) sapphire substrate that forms.
Yet, do not mate owing to have very large lattice between aluminium oxide and the gallium nitride series material, when therefore utilizing laser lift-off to remove the growth substrate, can produce sizable stress.And, the energy that epitaxial light emission structure more may absorbing laser.Therefore thus, epitaxial light emission structure can suffer damage, and causes the luminous efficacy of light-emitting diode and reliability and manufacture craft qualification rate to decline to a great extent.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of manufacture method of light emitting diode construction, it only removes the epitaxial growth substrate of part.Thus, can significantly reduce the stress that produces when the epitaxial growth substrate removes, so the damage that in the time of can effectively reducing the epitaxial growth substrate and remove epitaxial structure is caused.
Another object of the present invention is to provide a kind of manufacture method of light emitting diode construction, wherein laser only contacts epitaxial structure or the etched material layer of fraction, can significantly alleviate the infringement that epitaxial structure is caused, and therefore can improve the manufacture craft qualification rate.
Another purpose of the present invention is to provide a kind of light emitting diode construction, has excellent luminous efficacy and high-reliability.
According to above-mentioned purpose of the present invention, a kind of light emitting diode construction is proposed, comprise p-type electrode, bonded substrate, p-type semiconductor layer, luminescent layer, N-shaped semiconductor layer, epitaxial growth substrate and N-shaped electrode.Bonded substrate is located on the p-type electrode.The p-type semiconductor layer is located on the bonded substrate.Luminescent layer is located on the p-type semiconductor layer.The N-shaped semiconductor layer is located on the luminescent layer.The epitaxial growth substrate is located on the N-shaped semiconductor layer, and wherein the epitaxial growth substrate comprises an opening and runs through the epitaxial growth substrate.The N-shaped electrode is located in the opening, and is electrically connected with the N-shaped semiconductor layer.
According to one embodiment of the invention, above-mentioned metal level comprises a first and two second portions, and these second portions are bonded on respectively on relative two sides of first, and forms a class U font structure.
According to above-mentioned purpose of the present invention, other proposes a kind of manufacture method of light emitting diode construction, comprises: an epitaxial growth substrate is provided, and wherein a surface of epitaxial growth substrate sequentially is coated with N-shaped semiconductor layer, luminescent layer and p-type semiconductor layer; Engage first surface and the p-type semiconductor layer of a bonded substrate, bonded substrate more comprises second surface with respect to first surface; Form a passage and run through the epitaxial growth substrate, to expose at least a portion of N-shaped semiconductor layer; Carry out an etching step, utilize an etchant via passage etching N-shaped semiconductor layer so that the part of epitaxial growth substrate overhangs on the N-shaped semiconductor layer; Remove the part of overhanging of at least part of epitaxial growth substrate, and form an opening in the epitaxial growth substrate, this opening exposes the N-shaped semiconductor layer of part; Form a N-shaped electrode on the expose portion of N-shaped semiconductor layer; And form a p-type electrode on the second surface of bonded substrate.
According to one embodiment of the invention, the step of above-mentioned formation passage and the step that removes the part of overhanging of epitaxial growth substrate can be utilized laser, and above-mentioned etching step can be wet etch step.
According to above-mentioned purpose of the present invention, a kind of manufacture method of light emitting diode construction is proposed again, comprise: an epitaxial growth substrate is provided, and wherein a surface of epitaxial growth substrate sequentially is coated with N-shaped semiconductor layer, luminescent layer and p-type semiconductor layer; Carry out a patterning step, with p-type semiconductor layer and the luminescent layer partly that removes part, until expose at least the N-shaped semiconductor layer of part, and form one first opening; Form a metal level on the bottom surface of the first opening, wherein metal level is electrically connected with the N-shaped semiconductor layer, and is provided with an etched material layer between the surface of epitaxial growth substrate and the metal level; Form an insulating barrier and fill the first opening; Engage first surface and the p-type semiconductor layer of a bonded substrate, bonded substrate more comprises second surface with respect to first surface; Form a passage and run through the epitaxial growth substrate, to expose at least a portion of etched material layer; Carry out an etching step, utilize an etchant via passage the aforesaid etched material layer of etching so that the part of epitaxial growth substrate overhangs on the metal level; Remove the part of overhanging of at least part of epitaxial growth substrate, and form one second opening in the epitaxial growth substrate, the second opening exposes the metal level of part; Form a N-shaped electrode on the expose portion of metal level; And form a p-type electrode on the second surface of bonded substrate.
According to one embodiment of the invention, above-mentioned metal level comprises a first, extends to the epitaxial growth substrate with relative two sides of two second portions from first.
Description of drawings
For above and other purpose of the present invention, feature, advantage and embodiment can be become apparent, appended the description of the drawings is as follows:
Figure 1A to Fig. 1 F is the manufacture craft cutaway view according to a kind of light emitting diode construction of one embodiment of the present invention;
Fig. 2 A to Fig. 2 F is the manufacture craft cutaway view according to a kind of light emitting diode construction of another embodiment of the present invention.
The main element symbol description
100: epitaxial growth substrate 102: surface
104: surperficial 106:n type semiconductor layer
108: luminescent layer 110:p type semiconductor layer
112:p type contact layer 114: reflector
116: knitting layer 118: bonded substrate
120: surface 122: surface
124: passage 126: overhang
128: laser 130: part
132: opening 134:n type electrode
136:p type electrode 138: light emitting diode construction
140: width 142: width
144: opening 146: etched material layer
148: metal level 150: first
152: second portion 154: insulating barrier
156: overhang 158: laser
160: opening 162: part
164: light emitting diode construction 166: bottom surface
168: width
Embodiment
Please refer to Figure 1A to Fig. 1 F, it is the manufacture craft cutaway view according to a kind of light emitting diode construction of one embodiment of the present invention.When making light emitting diode construction, provide first epitaxial growth substrate 100.Epitaxial growth substrate 100 has relative surface 102 and 104.The material of epitaxial growth substrate 100 can for example be aluminium oxide.In one embodiment, epitaxial growth substrate 100 can be the sapphire substrate that is comprised of aluminium oxide.Then, utilize for example epitaxial growth mode, sequentially cover N-shaped semiconductor layer 106, luminescent layer 108 and p-type semiconductor layer 110 on the surface 102 of epitaxial growth substrate 100.In one embodiment, N-shaped semiconductor layer 106, luminescent layer 108 can for example be gallium nitride series (GaN-based) material, for example indium nitride gallium aluminium (InAlGaN) with the material of p-type semiconductor layer 110.In addition, luminescent layer 108 can for example comprise multiple quantum trap (Multi-quantum Well; MQW) structure.
Then, optionally forming p-type contact layer 112 covers on the p-type semiconductor layer 110.P-type contact layer 112 can form ohmic contact with p-type semiconductor layer 110.P-type contact layer 112 can be single layer structure or sandwich construction.In one embodiment, the material of p-type contact layer 112 is nickel/gold (Ni/Au), nickel/silver (Ni/Ag), tin indium oxide (ITO), zinc oxide (ZnO), zinc-gallium oxide (GZO), zinc oxide aluminum (AZO) or indium oxide (In
2O
3).In addition, can cover on the p-type contact layer 112 according to product demand the light that is sent to reflect luminescent layer 108 and optionally form reflector 114.The material in reflector 114 can comprise high-reflectivity metal, for example aluminium, silver or platinum.
In addition, more can be according to the manufacture craft demand, and optionally form knitting layer 116, in order to the reflector 114 and bonded substrate 118 that engage on the p-type semiconductor layer 110.Knitting layer 116 can be formed on first on the reflector 114 of p-type semiconductor layer 110 tops.Perhaps, can be formed on first on the surface 120 of bonded substrate 118.Knitting layer 116 can be the metal structure of single or multiple lift.Then, shown in Figure 1A, can pass through knitting layer 116, and the surface 120 of bonded substrate 118 is bonded on the reflector 114 of p-type semiconductor layer top.Bonded substrate 118 has more another surface 122, and wherein surface 122 and 120 lays respectively at relative two sides of bonded substrate 118.The material of bonded substrate 118 can for example be metal, semi-conducting material or the metal semiconductor composite material of high heat conduction.In one embodiment, the material of bonded substrate 118 can for example comprise the combination in any of silicon, molybdenum, copper, nickel, aluminium, copper-tungsten or above-mentioned material.
In certain embodiments, finish bonded substrate 118 and p-type semiconductor layer 110 engage manufacture craft after, can be according to product demand, and optionally the surface 104 of epitaxial growth substrate 100 is ground, to subdue the thickness of epitaxial growth substrate 100.In one embodiment, the thickness of the epitaxial growth substrate 100 after grinding can be for example between 1 micron to 300 microns.
For ease of follow-up manufacture craft explanation, Figure 1B to Fig. 1 F is the schematic diagram that Figure 1A spins upside down.Next, as shown in Figure 1B, utilize for example laser, scratch the epitaxial growth substrate 100 of part from the surface 104 of epitaxial growth substrate 100, and in epitaxial growth substrate 100, form the passage 124 that runs through epitaxial growth substrate 100.In the present embodiment, passage 124 exposes the part of N-shaped semiconductor layer 106.In one embodiment, the width 140 of passage 124 can be for example between 1 micron to 50 microns.In the embodiment shown in Figure 1B, passage 124 does not extend in the N-shaped semiconductor layer 106.In another embodiment, passage 124 may extend in the N-shaped semiconductor layer 106.
Then, carry out etching step, so that etchant comes etching N-shaped semiconductor layer 106 via passage 124.In one embodiment, this etching step can for example be adopted the wet etching mode, etchant admission passage 124, and the expose portion of N-shaped semiconductor layer 106 is carried out etching.Etchant can be along epitaxial growth substrate 100 interface with N-shaped semiconductor layer 106, and is removed the N-shaped semiconductor layer of part towards passage 124 outside lateral etches by the bottom surface of passage 124.Through this etching step, epitaxial growth substrate 100 parts that are adjacent to passage 124 overhang on the N-shaped semiconductor layer 106, and form overhang 126, shown in Fig. 1 C.In one embodiment, etchant can for example comprise sulfuric acid (H
2SO
4) and phosphoric acid (H
3PO
4) composition, potassium hydroxide (KOH) or NaOH (NaOH).
Next, shown in Fig. 1 D, can utilize for example laser 128, draw the overhang 126 of disconnected epitaxial growth substrate 100, and remove the overhang 126 of epitaxial growth substrate 100, in epitaxial growth substrate 100, to form opening 132.In the embodiment shown in Fig. 1 D, the overhang of epitaxial growth substrate 100 removes for 126 rounds fully.In another embodiment, the overhang 126 of epitaxial growth substrate 100 does not remove fully, and can have part to overhang in the opening 132.
After the overhang 126 of epitaxial growth substrate 100 was removed, formed opening 132 exposed the part 130 of N-shaped semiconductor layer 106, shown in Fig. 1 E.The width 142 of the part 130 that N-shaped semiconductor layer 106 exposes can be for example greater than 30 microns.
Then, can be according to product demand, and optionally grind bonded substrates 118 from the surface 122 of bonded substrate 118, to reduce the thickness of bonded substrate 118.Then, shown in Fig. 1 F, utilize for example evaporation mode, form N-shaped electrode 134 and p-type electrode 136, and finish the making of light emitting diode construction 138.In one embodiment, N-shaped electrode 134 can only be arranged on the expose portion 130 of N-shaped semiconductor layer 106, shown in Fig. 1 F.In another embodiment, N-shaped electrode 134 can partly be positioned on the expose portion 130 of N-shaped semiconductor layer 106, and another part is positioned on the surface 104 of epitaxial growth substrate 100.N-shaped electrode 134 is electrically connected with N-shaped semiconductor layer 106, and the better ohmic contact that is.136 at p-type electrode covers on the surface 122 of bonded substrate 118.The p-type electrode is electrically connected with bonded substrate 118, and the better ohmic contact that is.P-type electrode 136 can for example comprise common gold metal layer (eutectic layer), and the material of this common gold metal layer can for example be gold-tin alloy (AuSn), silver-colored ashbury metal (AgSn), golden gun-metal (AuSnCu) or silver-colored gun-metal (AgSnCu).
Please refer to Fig. 2 A to Fig. 2 F, it is the manufacture craft cutaway view according to a kind of light emitting diode construction of another embodiment of the present invention.In the present embodiment, the label identical with the execution mode shown in above-mentioned Figure 1A to Fig. 1 F represents same characteristic features.When making light emitting diode construction, provide first epitaxial growth substrate 100.Then, utilize for example epitaxial growth mode, and form the epitaxial light emission structure of the N-shaped semiconductor layer 106, luminescent layer 108 and the p-type semiconductor layer 110 that comprise on the surface 102 that sequentially covers epitaxial growth substrate 100.
Then, the patterning epitaxial light emission structure, with p-type semiconductor layer 110 and the luminescent layer 108 partly that removes part, until expose at least the N-shaped semiconductor layer 106 of part, and in epitaxial light emission structure, form opening 144.In one embodiment, the bottom surface 166 of the formed opening 110 of this patterning step exposes the N-shaped semiconductor layer 106 of part.Therefore, please refer to Fig. 2 A, the etched material layer 146 on the surface 102 of epitaxial growth substrate 100 is the part of N-shaped semiconductor layer 106.
In another embodiment, the N-shaped semiconductor layer 106 of this patterning step removable portion, and make opening 144 expose the surface 102 of epitaxial growth substrate 100.Therefore, finish this patterning step after, can utilize for example depositional mode, form in addition on the expose portion on surface 102 that etched material layer 146 covers epitaxial growth substrate 100.The material of etched material layer 146 can for example be silicon dioxide, silicon nitride, titanium dioxide or aluminium oxide.In one embodiment, the bottom surface 166 of opening 110 is the end face of etched material layer 146.
Then, utilize the technology such as photoetching, etching and deposition, form metal level 148, wherein this metal level 148 is positioned on the bottom surface 166 of opening 144 at least.Therefore, etched material layer 146 is between the surface 102 of metal level 148 and epitaxial growth substrate 100.In addition, metal level 148 engages with N-shaped semiconductor layer 106 and is electrical connection.Please refer to Fig. 2 A, in one embodiment, metal level 148 comprises first 150 and two second portions 152, wherein these two second portions 152 are bonded on relative two sides of first 150, and pass the surface 102 that extends to epitaxial growth substrate 100 between N-shaped semiconductor layer 106 and the etched material layer 146 from first 150.Therefore, metal level 148 is a class U font structure.In one embodiment, second portion 152 contacts with the surface 102 of epitaxial growth substrate 100.In another embodiment, second portion 152 extends in the epitaxial growth substrate 100 always, thereby an end of each second portion 152 is embedded in epitaxial growth substrate 100.
Next, utilize for example depositional mode, formation insulating barrier 154 covers on the bottom surface 166 of metal level 148 and opening 144, and fills up opening 144, with electrical isolation metal level 148 and p-type semiconductor layer 110.Insulating barrier 154 can be single layer structure or multiple-level stack structure.In one embodiment, the material of insulating barrier 154 can for example be silicon dioxide, silicon nitride, titanium dioxide, aluminium oxide or titanium nitride.
In one embodiment, optionally forming p-type contact layer 112 covers on p-type semiconductor layer 110 and the insulating barrier 154.P-type contact layer 112 can form ohmic contact with p-type semiconductor layer 110.According to product demand, optionally form reflector 114 and cover on the p-type contact layer 112, the light that is sent to reflect luminescent layer 108.In addition, according to the manufacture craft demand, optionally form knitting layer 116, in order to engaging reflector 114 and bonded substrate 118.In one embodiment, knitting layer 116 can be formed on first on the reflector 114 of p-type semiconductor layer 110 tops.In another embodiment, knitting layer 116 can be formed on first on the surface 120 of bonded substrate 118.Next, shown in Fig. 2 A, can pass through knitting layer 116, and the surface 120 of bonded substrate 118 is bonded on the reflector 114 of p-type semiconductor layer top.Bonded substrate 118 has and surperficial 120 another relative surfaces 122.
In certain embodiments, finish bonded substrate 118 and p-type semiconductor layer 110 engage manufacture craft after, equally can be according to product demand, and optionally the surface 104 of epitaxial growth substrate 100 is ground, to subdue the thickness of epitaxial growth substrate 100.The thickness of the epitaxial growth substrate 100 after grinding can be for example between 1 micron to 300 microns.
For ease of follow-up manufacture craft explanation, Fig. 2 B to Fig. 2 F is the schematic diagram that Fig. 2 A spins upside down.Then, shown in Fig. 2 B, utilize for example laser, scratch epitaxial growth substrate 100 from the surface 104 of epitaxial growth substrate 100, run through the passage 124 of epitaxial growth substrate 100 and in epitaxial growth substrate 100, form, and expose the part of etched material layer 146.In one embodiment, passage 124 does not extend in the etched material layer 146, shown in Fig. 2 B.In another embodiment, passage 124 extensible entering in the etched material layer 146.
Subsequently, utilize for example wet etch techniques, so that etchant comes etching etched material layer 146 via passage 124.Etchant removes etched material layer 146 by the bottom surface of passage 124 towards passage 124 outside lateral etches.In the present embodiment, this etching step can utilize the first 150 of metal level 148 as the terminal point structure of vertical etching direction, and can utilize the second portion 152 of metal level 148 as the terminal point structure of lateral etches direction, in order to accurately controlling etching end point.After finishing this etching step, the epitaxial growth substrate 100 that is adjacent to passage 124 comprises overhang 156 and overhangs on the metal level 148, shown in Fig. 2 C.In one embodiment, etchant can for example comprise composition, potassium hydroxide, NaOH, buffer oxide etch agent (the Buffered Oxide Etcher of sulfuric acid and phosphoric acid; BOE) or hydrogen fluoride (HF).
Then, shown in Fig. 2 D, can utilize for example laser 158, draw the overhang 156 of disconnected epitaxial growth substrate 100, be used for removing the overhang 156 of epitaxial growth substrate 100, and in epitaxial growth substrate 100, form opening 160.In the embodiment shown in Fig. 2 D, the overhang 156 of epitaxial growth substrate 100 does not meet with removing fully, and has part to overhang in the opening 160.In another embodiment, can remove the overhang 156 of epitaxial growth substrate 100 fully.
Shown in Fig. 2 E, remove the overhang 156 of epitaxial growth substrate 100 after, formed opening 132 exposes the part 162 of metal level 148 in epitaxial growth substrate 100.The width 168 of the part 162 that metal level 148 exposes can be for example greater than 30 microns.
At this moment, can be according to product demand, and optionally grind bonded substrates 118 from the surface 122 of bonded substrate 118, with the thickness of reduction bonded substrate 118.Next, shown in Fig. 2 F, utilize for example evaporation mode, form N-shaped electrode 134 and p-type electrode 136, and finish the making of light emitting diode construction 164.In one embodiment, N-shaped electrode 134 can only be arranged on the expose portion 162 of metal level 148, shown in Fig. 2 F.In another embodiment, N-shaped electrode 134 can partly be positioned on the expose portion 162 of metal level 148, and another part then is positioned on the surface 104 of epitaxial growth substrate 100.136 at p-type electrode covers on the surface 122 of bonded substrate 118.N-shaped electrode 134 is electrically connected with N-shaped semiconductor layer 106, and the p-type electrode is electrically connected with bonded substrate 118.N-shaped electrode 134 and the N-shaped semiconductor layer 106 better ohmic contact that are, p-type electrode and the bonded substrate 118 better ohmic contact that are.
By the invention described above execution mode as can be known, an advantage of the present invention is exactly because the manufacture method of light emitting diode construction of the present invention is only removed the epitaxial growth substrate of part.Therefore, can significantly reduce the stress that produces when the epitaxial growth substrate removes, so the damage that in the time of can effectively reducing the epitaxial growth substrate and remove epitaxial structure is caused.
By the invention described above execution mode as can be known, the laser of the manufacture method that another advantage of the present invention is light emitting diode construction of the present invention only contacts epitaxial structure or the etched material layer of fraction, the infringement that epitaxial structure is caused can be significantly alleviated, therefore the manufacture craft qualification rate can be improved.
By the invention described above execution mode as can be known, another advantage of the present invention is exactly because light emitting diode construction of the present invention is subject to part epitaxial loayer or the etched material layer of laser contact, all remove in etching step subsequently, affect luminous efficacy and can eliminate because epitaxial structure damages.Therefore, light emitting diode construction of the present invention has excellent luminous efficacy and high-reliability.
Although disclosed the present invention in conjunction with above embodiment; yet it is not to limit the present invention; anyly be familiar with in this technical field this operator; without departing from the spirit and scope of the present invention; can be used for a variety of modifications and variations, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (9)
1. light emitting diode construction comprises:
The p-type electrode;
Bonded substrate is located on this p-type electrode;
The p-type semiconductor layer is located on this bonded substrate;
Luminescent layer is located on this p-type semiconductor layer;
The N-shaped semiconductor layer is located on this luminescent layer;
The epitaxial growth substrate is located on this N-shaped semiconductor layer, and wherein this epitaxial growth substrate comprises an opening and runs through this epitaxial growth substrate; And
The N-shaped electrode is located in this opening, and is electrically connected with this N-shaped semiconductor layer,
Wherein this epitaxial growth substrate also comprises overhang, and it is based in this opening.
2. light emitting diode construction as claimed in claim 1 also comprises knitting layer, and it is bonded between this bonded substrate and this p-type semiconductor layer.
3. light emitting diode construction as claimed in claim 1 also comprises the reflector, and it is between this bonded substrate and this p-type semiconductor layer.
4. light emitting diode construction as claimed in claim 1 also comprises the p-type contact layer, and it is between this bonded substrate and this p-type semiconductor layer.
5. light emitting diode construction as claimed in claim 1, wherein this opening exposes the part of this N-shaped semiconductor layer, and this N-shaped electrode is located on this part of this N-shaped semiconductor layer.
6. light emitting diode construction as claimed in claim 1 also comprises:
Insulating barrier is positioned on this bonded substrate of below of this opening; And
Metal level is positioned on this insulating barrier, and wherein this opening exposes this metal level.
7. light emitting diode construction as claimed in claim 6, wherein this N-shaped electrode is located on this metal level.
8. the manufacture method of a light emitting diode construction comprises:
One epitaxial growth substrate is provided, and wherein a surface of this epitaxial growth substrate sequentially is coated with N-shaped semiconductor layer, luminescent layer and p-type semiconductor layer;
Engage first surface and this p-type semiconductor layer of a bonded substrate, this bonded substrate also comprises second surface with respect to this first surface;
Form a passage and run through this epitaxial growth substrate, to expose at least a portion of this N-shaped semiconductor layer;
Carry out an etching step, utilize an etchant via this passage this part of this N-shaped semiconductor layer of etching so that the part of this epitaxial growth substrate overhangs on this N-shaped semiconductor layer;
Remove this part of overhanging of this at least part of epitaxial growth substrate, and form an opening in this epitaxial growth substrate, this opening exposes this N-shaped semiconductor layer of part;
Form a N-shaped electrode on this part that this N-shaped semiconductor layer exposes; And
Form a p-type electrode on this second surface of this bonded substrate.
9. the manufacture method of a light emitting diode construction comprises:
One epitaxial growth substrate is provided, and wherein a surface of this epitaxial growth substrate sequentially is coated with N-shaped semiconductor layer, luminescent layer and p-type semiconductor layer;
Carry out a patterning step, with this p-type semiconductor layer and this luminescent layer partly that removes part, until expose at least this N-shaped semiconductor layer of part, and form one first opening;
Form a metal level on a bottom surface of this first opening, wherein this metal level is electrically connected with this N-shaped semiconductor layer, and is provided with an etched material layer between this surface of this epitaxial growth substrate and this metal level;
Form an insulating barrier and fill this first opening;
Engage first surface and this p-type semiconductor layer of a bonded substrate, this bonded substrate also comprises second surface with respect to this first surface;
Form a passage and run through this epitaxial growth substrate, to expose at least a portion of this etched material layer;
Carry out an etching step, utilize an etchant via this passage this etched material layer of etching so that the part of this epitaxial growth substrate overhangs on this metal level;
Remove this part of overhanging of this at least part of epitaxial growth substrate, and form one second opening in this epitaxial growth substrate, this second opening exposes this metal level of part;
Form a N-shaped electrode on this part that this metal level exposes; And
Form a p-type electrode on this second surface of this bonded substrate.
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| CN 201010144359 CN102201511B (en) | 2010-03-22 | 2010-03-22 | Light emitting diode structure and manufacturing method thereof |
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| CN 201010144359 CN102201511B (en) | 2010-03-22 | 2010-03-22 | Light emitting diode structure and manufacturing method thereof |
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| CN102637790A (en) * | 2012-05-03 | 2012-08-15 | 杭州士兰明芯科技有限公司 | LED (light emitting diode) chip and corresponding manufacturing method thereof |
| TWI688139B (en) * | 2019-03-05 | 2020-03-11 | 友達光電股份有限公司 | Manufacturing method and testing method of testing device |
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| US6201265B1 (en) * | 1997-03-25 | 2001-03-13 | Sharp Kabushiki Kaisha | Group III-V type nitride compound semiconductor device and method of manufacturing the same |
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
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| JPH0730153A (en) * | 1993-07-14 | 1995-01-31 | Hitachi Cable Ltd | Light-emitting diode chip, its pedestal and light-emitting diode |
| JP2004186544A (en) * | 2002-12-05 | 2004-07-02 | Hitachi Cable Ltd | Semiconductor light emitting element |
| JP2005322722A (en) * | 2004-05-07 | 2005-11-17 | Korai Kagi Kofun Yugenkoshi | Light emitting diode |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6201265B1 (en) * | 1997-03-25 | 2001-03-13 | Sharp Kabushiki Kaisha | Group III-V type nitride compound semiconductor device and method of manufacturing the same |
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
Non-Patent Citations (3)
| Title |
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| JP特开2004-186544A 2004.07.02 |
| JP特开2005-322722A 2005.11.17 |
| JP特开平7-30153A 1995.01.31 |
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