TW202027304A - Deep ultraviolet led device and method for manufacturing same - Google Patents

Abstract

Provided is a deep ultraviolet LED device comprising: a surface mount-type aluminum nitride ceramic package in which an inorganic coating film having a reflectivity of at least 91% at a deep ultraviolet LED element design wavelength [lambda] (200-355 nm) is coated on the inner bottom surface and inner side walls thereof, the inner side wall angle thereof is 45-60 degrees, and the outermost surface thereof is sealed with a quartz window; and a deep ultraviolet LED element mounted in the package, wherein the deep ultraviolet LED element has a reflective electrode layer (Au), a metal layer (Ni), a p-type GaN contact layer, a p-type AlGaN layer, a multi-quantum barrier layer (or electron block layer), a multi-quantum well layer, an n-type AlGaN layer, an AlN buffer layer, and a sapphire substrate in this order from the opposite side from the sapphire substrate, and has a reflective two-dimensional photonic crystal which is located within the range of the metal layer and the p-type GaN contact layer in the thickness direction and which has a plurality vacancies disposed in locations that are not beyond the boundaries of the p-type GaN contact layer and the p-type AlGaN layer. The periodic structure of the reflective two-dimensional photonic crystal has a photonic band gap that opens to a TE-polarized component, wherein the period a of the reflective two-dimensional photonic crystal periodic structure satisfies the Bragg condition for light having the design wavelength [lambda], the order m in the Bragg equation, m[lambda]/neff=2a (m: order, [lambda]: design wavelength, neff: effective refractive index of two-dimensional photonic crystal, and a: period of two-dimensional photonic crystal) satisfies 3 ≤ m ≤ 4, and the ratio of R/a (R is the radius of the vacancies) satisfies 0.30 ≤ R/a ≤ 0.40.

Description

Deep ultraviolet LED device and manufacturing method thereof

The present invention relates to a deep ultraviolet LED (light-emitting diode, light-emitting diode) device and a manufacturing method thereof.

Deep ultraviolet LEDs with emission wavelengths of 200 nm ~ 355 nm are involved in sterilization, water purification, sterilization of nosocomial infections, medical uses of leukoplakia, atopic dermatitis, and industrial uses of resin hardening. However, the power conversion efficiency (WPE) is several%, which is lower than the 20% of mercury lamps, and there are many problems in practical use. The reason is that the light emitted from the quantum well layer is absorbed and disappeared by the p-type GaN contact layer and Ni/Au electrode, and it is not easy to extract the light to the outside due to the total internal reflection caused by the refractive index difference between the LED element and the air. Etc., the light extraction efficiency (Light Extraction Efficiency: LEE) is as low as 6% or less. Furthermore, when the LED element is mounted in the package, there is no effective material that suppresses the absorption of deep ultraviolet light.

Therefore, in Patent Document 1, it is reported that a reflection type photonic crystal is formed on a p-type GaN contact layer or a p-type AlGaN contact layer to improve LEE by more than two times. In addition, in Patent Document 2, it is reported that a sapphire hemispherical lens that is transparent to the above-mentioned wavelength is bonded to the back of a sapphire substrate to improve the LEE by a maximum of about 3 times. [Prior Technical Literature] [Patent Literature]

Patent Document 1: Japanese Patent No. 6156898 Patent Document 2: Japanese Patent No. 623038

[The problem to be solved by the invention]

In Table 1 of Patent Document 1, a reflective photonic crystal is formed on a p-type AlGaN contact layer that is transparent to the emission wavelength, and the LEE is improved to 23.8%, which is a maximum of 1.82 times. In this case, the premise is that the inner wall of the aluminum nitride ceramic package with the deep-ultraviolet LED element is covered by aluminum with a reflectivity of 92% at a wavelength of 280 nm. However, in the actual process of using aluminum vapor deposition on the inner wall of the package, the excited electrons on the aluminum nitride surface weaken the electric field inside the aluminum, so the deep ultraviolet light enters the interior and disappears, and the desired reflection cannot be obtained. Rate (refer to Figure 1E of this application below).

In addition, in Table 7 of Patent Document 2, a sapphire hemispherical lens is bonded to the back of the sapphire substrate of the deep ultraviolet LED element with the above-mentioned reflective photonic crystal to improve the LEE to a maximum of 57.1%, but the back of the sapphire substrate is polished to make Steps with a thickness as thin as 400 um to 100 um are costly and not practical. Furthermore, when the deep-ultraviolet LED element is installed in a commercially available aluminum nitride ceramic package with excellent heat dissipation characteristics, all the deep-ultraviolet light is absorbed and disappeared by the inner side wall of the package, resulting in a problem that the LEE performance deteriorates by more than 30% , So LEE decreased from 57.1% to about 40%.

The purpose of the present invention is to improve the LEE of a deep ultraviolet LED device. In addition, the purpose of the present invention is to realize a deep ultraviolet LED device with improved LEE at low cost. [Technical means to solve the problem]

According to the first aspect of the present invention, there is provided a deep ultraviolet LED device of the present invention, which is characterized by having: a package, which is coated on the inner bottom surface and the inner side wall with the design wavelength λ (200 nm~355 nm) for the deep ultraviolet LED element ) Inorganic paint with a reflectance of 91% or more and the inorganic paint is hardened (hereinafter, the act of covering the above-mentioned inorganic paint and hardening is also described as "coating", and the film covered with the above-mentioned inorganic paint is described as " Inorganic coating film") surface-mounted aluminum nitride ceramic package, and the inner side wall angle of the package is 45 degrees to 60 degrees, and the outermost surface of the package is sealed by a quartz window; and deep ultraviolet LED components, which are It is installed in the above package and has a reflective electrode layer (Au), a metal layer (Ni), a p-type GaN contact layer, a p-type AlGaN layer, and a multiple quantum barrier layer (or electron barrier layer) in order from the side opposite to the sapphire substrate , A multiple quantum well layer, an n-type AlGaN layer, an AlN buffer layer, and the sapphire substrate, and the deep ultraviolet LED element has a reflective two-dimensional photonic crystal, the reflective two-dimensional photonic crystal has the metal layer and the p A plurality of holes within the thickness direction of the p-type GaN contact layer and not exceeding the position of the interface between the p-type GaN contact layer and the p-type AlGaN layer, the reflective two-dimensional photonic crystal periodic structure has a polarization relative to TE For the photonic band gap with open components, relative to the light of the design wavelength λ, the period a of the reflective two-dimensional photonic crystal periodic structure satisfies the Bragg condition and is in the Bragg condition mλ/n _eff = 2a (where m: Order, λ: design wavelength, n _eff : effective refractive index of two-dimensional photonic crystal, a: period of two-dimensional photonic crystal) The order m satisfies 3≦m≦4, when the radius of the above hole is set to R, The R/a ratio satisfies 0.30≦R/a≦0.40. Furthermore, the reflectance of the above-mentioned inorganic coating only needs to be 91% or more at the design wavelength λ (200 nm~355 nm) when the above-mentioned ultraviolet LED device is used, even if the inorganic coating itself does not reach 91% of the reflectance. The rate may also be an inorganic paint that has a reflectance of 91% after being coated, or an inorganic paint that has a reflectivity of 91% or more after being coated by an additional treatment with chemical changes.

According to a second aspect of the present invention, there is provided a deep-ultraviolet LED device of the present invention, which is characterized by having: a package, which is a surface mount aluminum nitride ceramic package with the above-mentioned inorganic paint coated on the inner bottom surface and the inner side wall, and the package The inner side wall angle is 45 degrees or more and 60 degrees or less, and the outermost surface of the package is sealed by a quartz window; and deep ultraviolet LED elements are installed in the package and have a reflective electrode layer in sequence from the side opposite to the sapphire substrate (Au), metal layer (Ni), p-type AlGaN contact layer, multiple quantum barrier layer (or electron barrier layer), multiple quantum well layer, n-type AlGaN layer, AlN buffer layer, and the above-mentioned sapphire substrate, and the deep ultraviolet The LED element has a reflective two-dimensional photonic crystal that has a thickness that is arranged within the thickness direction of the metal layer and the p-type AlGaN contact layer, and does not exceed the p-type AlGaN contact layer and the multiple quantum A plurality of holes at the interface of the barrier layer (or electron blocking layer), the above-mentioned reflective two-dimensional photonic crystal periodic structure has a photonic band gap opened with respect to the TE polarization component, and the above-mentioned reflection is relative to the light of the above-mentioned design wavelength λ The period a of the two-dimensional photonic crystal periodic structure satisfies the Bragg condition and is in the Bragg condition mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : effective refractive index of the two-dimensional photonic crystal , A: the period of the two-dimensional photonic crystal). The number m satisfies 2≦m≦3. When the radius of the above-mentioned hole is set to R, the R/a ratio satisfies 0.30≦R/a≦0.35.

According to a third aspect of the present invention, a deep ultraviolet LED device is provided, characterized in that the structure of the deep ultraviolet LED device from the second aspect described above replaces the reflective electrode (Au) with the reflective electrode (Rh) and has no metal layer (Ni) structure.

According to a fourth aspect of the present invention, a deep ultraviolet LED device is provided, characterized in that, in the structure of the deep ultraviolet LED device of the first aspect, a deep ultraviolet LED element is further provided, and the deep ultraviolet LED element is bonded to the sapphire A sapphire or quartz hemispherical lens transparent to the wavelength λ on the back of the substrate, and the radius of the hemispherical lens is greater than the radius of the outer circle of the sapphire substrate.

According to a fifth aspect of the present invention, a deep ultraviolet LED device is provided, characterized in that, in the structure of the deep ultraviolet LED device of the second aspect, there is further a sapphire or sapphire transparent to the wavelength λ bonded to the back of the sapphire substrate. For the quartz hemispherical lens, the radius of the hemispherical lens is greater than the radius of the outer circle of the sapphire substrate.

According to the sixth aspect of the present invention, there is provided a deep ultraviolet LED device, characterized in that, in the structure of the deep ultraviolet LED device of the third aspect, there is further a sapphire or a transparent sapphire or a wavelength λ bonded to the back of the sapphire substrate. For the quartz hemispherical lens, the radius of the hemispherical lens is greater than the radius of the outer circle of the sapphire substrate.

According to a seventh aspect of the present invention, a deep ultraviolet LED device is provided, which is characterized by having a package, which is a surface mount aluminum nitride ceramic package in which the inner bottom surface and the inner side wall are coated with the above-mentioned inorganic paint, and the inner side wall of the package The angle is 60 degrees or more and 75 degrees or less; and a deep ultraviolet LED element, which is installed in the above package, and has a reflective electrode layer (Au), a metal layer (Ni), and a p-type GaN contact in order from the side opposite to the sapphire substrate Layer, p-type AlGaN layer, multiple quantum barrier layer (or electron blocking layer), multiple quantum well layer, n-type AlGaN layer, AlN buffer layer, and the sapphire substrate, and the deep ultraviolet LED element has a reflective two-dimensional photonic crystal , The reflective two-dimensional photonic crystal has a plurality of positions arranged in the thickness direction of the metal layer and the p-type GaN contact layer, and does not exceed the position of the interface between the p-type GaN contact layer and the p-type AlGaN layer Hole, the reflective two-dimensional photonic crystal periodic structure has a photonic band gap open to the TE polarization component, and the period a of the reflective two-dimensional photonic crystal periodic structure satisfies the Bragg condition with respect to the light of the design wavelength λ, And in Bragg's conditional formula mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : effective refractive index of two-dimensional photon crystal, a: period of two-dimensional photon crystal), the order m satisfies 3 ≦m≦4, when the radius of the hole is set to R, the R/a ratio satisfies 0.30≦R/a≦0.40, and furthermore, it has a sapphire or quartz hemisphere that is transparent to the wavelength λ bonded to the back of the sapphire substrate Lens, the radius of the hemispherical lens is larger than the outer circle of the inner wall of the package, and a resin film transparent to the wavelength λ completely covers and seals the surface of the hemispherical lens and the upper surface of the package.

According to an eighth aspect of the present invention, a deep ultraviolet LED device is provided, which is characterized by having a package, which is a surface mount aluminum nitride ceramic package in which the inner bottom surface and the inner side wall of the above-mentioned inorganic paint are coated, and the inner side wall of the package The angle is 60 degrees or more and 75 degrees or less; and a deep ultraviolet LED element, which is installed in the above package, and has a reflective electrode layer (Au), a metal layer (Ni), and a p-type AlGaN contact in order from the side opposite to the sapphire substrate Layer, multiple quantum barrier layer (or electron barrier layer), multiple quantum well layer, n-type AlGaN layer, AlN buffer layer, and the above-mentioned sapphire substrate, and the deep ultraviolet LED element has a reflective two-dimensional photonic crystal, the reflective two The dimensional photonic crystal has a plurality of positions located within the thickness direction of the metal layer and the p-type AlGaN contact layer, and does not exceed the position of the interface between the p-type AlGaN contact layer and the multiple quantum barrier layer (or electron barrier layer) The reflective two-dimensional photonic crystal periodic structure has a photonic band gap open to the TE polarization component, and the period a of the reflective two-dimensional photonic crystal periodic structure satisfies the Bragg condition relative to the light of the design wavelength λ , And in Bragg's conditional formula mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : effective refractive index of two-dimensional photon crystal, a: period of two-dimensional photon crystal) the order m satisfies 2≦m≦3, when the radius of the hole is set to R, the R/a ratio satisfies 0.30≦R/a≦0.35; furthermore, it has sapphire or quartz bonded to the back surface of the sapphire substrate that is transparent to the wavelength λ A hemispherical lens, the radius of the hemispherical lens is larger than the outer circle of the inner wall of the package, and a resin film transparent to the wavelength λ completely covers and seals the surface of the hemispherical lens and the upper surface of the package.

According to a ninth aspect of the present invention, a deep ultraviolet LED device is provided, characterized in that the structure of the deep ultraviolet LED device from the eighth aspect described above replaces the reflective electrode (Au) with the reflective electrode (Rh), and has no metal layer (Ni) structure.

According to the tenth aspect of the present invention, a method for manufacturing a deep ultraviolet LED device is provided, which is a method for manufacturing a deep ultraviolet LED device with a design wavelength of λ (200 nm~355 nm), and a sapphire substrate is used as the growth substrate. The step of the multilayer structure, and formed from the opposite side of the above-mentioned sapphire substrate, including the reflective electrode layer (Au), metal layer (Ni), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (or electron blocking Layer), multiple quantum well layer, n-type AlGaN layer, AlN buffer layer, and the sapphire substrate laminated structure step includes the following steps: forming a reflective two-dimensional photonic crystal period structure, the reflective two-dimensional photon crystal period The structure has a plurality of holes arranged in the thickness direction of the metal layer and the p-type GaN contact layer and does not exceed the position of the interface between the p-type GaN contact layer and the p-type AlGaN layer; ready to be formed The above-mentioned reflective two-dimensional photonic crystal periodic structure mold; a resist layer is formed on the p-type GaN contact layer, and the structure of the above mold is transferred by the nanoimprint method; the resist layer with the above structure transferred is used as The mask is etched on the p-type GaN contact layer to form a two-dimensional photonic crystal periodic structure; the reflective two-dimensional photonic crystal is formed, and then the metal layer and the reflective electrode layer are sequentially formed by oblique vapor deposition; the sapphire substrate is cut to form Prepare deep-ultraviolet LED components; prepare a surface-mounted aluminum nitride ceramic package with an inner side wall angle of 45 degrees or more and 60 degrees or less; coat the inner bottom surface and inner side walls of the package with the above-mentioned inorganic paint; install the above-mentioned deep ultraviolet on the package LED components; and the outermost surface of the package is sealed with a quartz window.

According to the eleventh aspect of the present invention, there is provided a method of manufacturing a deep ultraviolet LED device, which is based on the method of manufacturing a deep ultraviolet LED device of the above ten viewpoints, which includes replacing the p-type contact layer from the p-type GaN contact layer with the p-type The step of the AlGaN contact layer is different from the position where the reflection type photonic crystal periodic structure is formed in the 16th viewpoint, that is, it is within the range of the thickness direction of the metal layer and the p-type AlGaN contact layer and does not exceed the p-type AlGaN The step of arranging a plurality of holes at the position of the interface between the contact layer and the above-mentioned multiple quantum barrier layer (or electron blocking layer) has the same steps as the tenth viewpoint except for this.

According to a twelfth aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, which is based on the method for manufacturing a deep ultraviolet LED device in the above-mentioned 11 viewpoints. The reflective electrode is replaced from Au to Rh and no metal layer (Ni The steps of) have the same steps as the eleventh viewpoint above except for this aspect.

According to a thirteenth aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, which is in the method for manufacturing a deep ultraviolet LED device of the tenth aspect, and further has the following steps: preparing a radius greater than the circumscribed circle of the LED element substrate The sapphire or quartz hemispherical lens; flatten the back surface of the LED element substrate and the back surface of the hemispheric lens; use ion beam or atmospheric pressure to activate the back surface of the hemispheric lens and the back surface of the LED element substrate; The back surface of the hemispherical lens is bonded to the back surface of the LED element substrate; prepare a surface-mounted aluminum nitride ceramic package with an inner side wall angle of 45 degrees or more and 60 degrees or less; coat the inner bottom surface and inner side walls of the package with the inorganic paint; in the package Installing the hemispherical lens bonded LED element; and sealing the outermost surface of the package with a quartz window.

According to a fourteenth aspect of the present invention, a method for manufacturing a deep ultraviolet LED device is provided, which is in the method for manufacturing a deep ultraviolet LED device according to the eleventh aspect, and further has the following steps: preparing a radius greater than the circumscribed circle of the LED element substrate The sapphire or quartz hemispherical lens; flatten the back surface of the LED element substrate and the back surface of the hemispheric lens; use ion beam or atmospheric pressure to activate the back surface of the hemispheric lens and the back surface of the LED element substrate; The back surface of the hemispherical lens is bonded to the back surface of the LED element substrate; prepare a surface-mounted aluminum nitride ceramic package with an inner side wall angle of 45 degrees or more and 60 degrees or less; coat the inner bottom surface and inner side walls of the package with the inorganic paint; in the package Installing the hemispherical lens bonded LED element; and sealing the outermost surface of the package with a quartz window.

According to the fifteenth aspect of the present invention, a method for manufacturing a deep ultraviolet LED device is provided, which is in the method for manufacturing a deep ultraviolet LED device according to the twelfth aspect, and further has the following steps: preparing a radius greater than the circumscribed circle of the LED element substrate The sapphire or quartz hemispherical lens; flatten the back surface of the LED element substrate and the back surface of the hemispheric lens; use ion beam or atmospheric pressure to activate the back surface of the hemispheric lens and the back surface of the LED element substrate; The back surface of the hemispherical lens is bonded to the back surface of the LED element substrate; prepare a surface-mounted aluminum nitride ceramic package with an inner side wall angle of 45 degrees or more and 60 degrees or less; coat the inner bottom surface and inner side walls of the package with the inorganic paint; in the package Installing the hemispherical lens bonded LED element; and sealing the outermost surface of the package with a quartz window.

According to the 16th aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, which is based on the method for manufacturing a deep ultraviolet LED device according to the tenth aspect, and further has the following steps: preparing a package with the inner wall of the package above the outer circle Radius sapphire or quartz hemispherical lens; flatten the back surface of the LED element substrate and the back surface of the hemispheric lens; use ion beam or atmospheric pressure to activate the back surface of the hemispheric lens and the back surface of the LED element substrate; will undergo the surface activation treatment The back surface of the hemispherical lens is bonded to the back surface of the LED element substrate; the hemispherical lens bonded LED element is mounted on the package; and a resin film transparent to the wavelength λ is simultaneously covered and sealed to seal the surface of the hemispherical lens and the upper surface of the package.

According to the 17th aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, which is based on the method for manufacturing a deep ultraviolet LED device according to the 11th aspect, and further has the following steps: preparing a package with the inner wall of the package above the outer circle Radius sapphire or quartz hemispherical lens; flatten the back surface of the LED element substrate and the back surface of the hemispheric lens; use ion beam or atmospheric pressure to activate the back surface of the hemispheric lens and the back surface of the LED element substrate; will undergo the surface activation treatment The back surface of the hemispherical lens is bonded to the back surface of the LED element substrate; the hemispherical lens bonded LED element is mounted on the package; and a resin film transparent to the wavelength λ is simultaneously covered and sealed to seal the surface of the hemispherical lens and the upper surface of the package.

According to the eighteenth aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, which is in the method for manufacturing a deep ultraviolet LED device according to the twelfth aspect, and further has the following steps: preparing a package with an inner wall of the above package Radius sapphire or quartz hemispherical lens; flatten the back surface of the LED element substrate and the back surface of the hemispheric lens; use ion beam or atmospheric pressure to activate the back surface of the hemispheric lens and the back surface of the LED element substrate; will undergo the surface activation treatment The back surface of the hemispherical lens is bonded to the back surface of the LED element substrate; the hemispherical lens bonded LED element is mounted on the package; and a resin film transparent to the wavelength λ is simultaneously covered and sealed to seal the surface of the hemispherical lens and the upper surface of the package. This specification contains the disclosure content of Japanese Patent Application No. 2018-157332, which forms the basis of the priority of this application. [Effects of Invention]

According to the present invention, the LEE of a deep ultraviolet LED device can be improved at low cost.

Hereinafter, the deep ultraviolet LED device of the embodiment of the present invention will be described in detail while referring to the drawings. Furthermore, in the implementation of the present invention, the inorganic coating NC-RC manufactured by Tungsten Co., Ltd. of Japan is used as the inorganic coating material that satisfies the reflectance of 91% or more at the design wavelength λ (200 nm~355 nm) of the deep ultraviolet LED element. Paint and coat to obtain NC-RC reflector. The inorganic coating NC-RC is a coating mainly composed of organic polysiloxane composition and hexagonal boron nitride. The reflectivity after coating is 91% or more at the design wavelength λ (200 nm~355 nm) .

(First Embodiment) As the deep ultraviolet LED device of the first embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a wavelength of 280 nm as an example of the design wavelength λ is shown in FIG. 1A(a-1), (a-2).

Specifically, from the top of the cross-sectional view of FIG. 1A(a-1), there are quartz window 1, sapphire substrate 2, AlN buffer layer 3, n-type AlGaN layer 4, multiple quantum well layer 5, multiple quantum barrier layer ( (Or electron blocking layer) 6, p-type AlGaN layer 7, p-type GaN contact layer 8, metal layer (hereinafter referred to as Ni layer) 9, reflective electrode layer (hereinafter referred to as Au reflective electrode layer) 10, surface mount nitride Aluminum package (hereinafter referred to as AlN package) 15, NC-RC reflector 17 coated on the inner bottom surface and inner sidewall surface of AlN package, inner sidewall angle θ15a of AlN package 15, reflective two-dimensional photonic crystal periodic structure 100, and space Hole 101(h).

As shown in Figure 1A(a-1), the AlN package 15 is equipped with a sapphire substrate 2, an AlN buffer layer 3, an n-type AlGaN layer 4, a multiple quantum well layer 5, and a multiple quantum barrier layer (or electron barrier layer). 6, p-type AlGaN layer 7, p-type GaN contact layer 8, metal layer (hereinafter referred to as Ni layer) 9, reflective electrode layer (hereinafter referred to as Au reflective electrode layer) 10, reflective two-dimensional photonic crystal periodic structure 100, And hollow 101(h) deep ultraviolet LED components. When the inner side wall angle θ15a of the AlN package 15 is 45 degrees or more and 60 degrees or less, the light emitted from the side surface of the deep ultraviolet LED element can be reflected in the upper direction, so the LEE is improved. In addition, the AlN package 15 seals the upper part with the quartz window 1. The reason is to prevent the deterioration of deep ultraviolet LED elements over the years.

Secondly, in the deep ultraviolet LED element, within the range of the thickness direction of the Ni layer 9 and the p-type GaN contact layer 8, and not exceeding the position of the interface between the p-type GaN contact layer 8 and the p-type AlGaN layer 7, a A reflective two-dimensional photonic crystal periodic structure 100 with a plurality of holes 101(h).

As shown in the xy top view in FIG. 1A(a-2), the reflective two-dimensional photonic crystal periodic structure 100 has a hole structure. The hole structure is cylindrical and has a lower refractive index than the p-type GaN contact layer 8 in air. A circle with a radius of R is a cross-sectional hole 101 (h) formed in a triangular lattice shape with a period a along the x direction and the y direction.

In the above-mentioned structure, the deep ultraviolet light with a wavelength of 280 nm emitted by the quantum well layer 5 radiates TE light and TM light in all directions along the meridian and propagates in the medium while being elliptically polarized. Moreover, the two-dimensional photonic crystal periodic structure 100 disposed near the quantum well layer 5 satisfies the Bragg conditional expression (mλ/n _eff = 2a, where m: order, λ: emission wavelength, n _eff : equivalent of two-dimensional photonic crystal Refractive index, a: the period of the two-dimensional photonic crystal), and when the photonic band gap (PBG) is opened relative to the TE polarization component, the deep ultraviolet light incident on the two-dimensional photon crystal forms a standing wave in the plane of the two-dimensional photon crystal And reflect in the direction of the sapphire substrate 2.

Figure 1B (b-1) shows the photonic band structure in the TE polarization component when deep ultraviolet light with a wavelength of 280 nm is incident on the two-dimensional photonic crystal (R/a=0.4) formed on the p-type GaN contact layer , In (b-2) use the plane wave expansion method to find the relationship between R/a and PBG and the graph. Furthermore, the so-called PBG value refers to the value representing the size of the band gap between the first photon band (ω1TE) and the second photon band (ω2TE), and is calculated from (the minimum value of the second photon band (ωa/2πc)) − (The maximum value of the first photon band (ωa/2πc)). According to the figure, it can be seen that R/a and PBG have a proportional relationship.

In addition, the parameters required for the calculation of the plane wave expansion method are calculated as follows. The filling rate f of the two-dimensional photonic crystal is calculated using the formula f=(2π/3) ^0.5 ×(R/a) ² . In addition, the equivalent refractive index n _eff of the two-dimensional photonic crystal using the system ^{_{n eff = (n2 2 + (}} n1 2 -n2 2) × f) Formula ^0.5 of calculation. Therefore, if the refractive index of air is n1=1 and the refractive index of the p-type GaN contact layer 8 is n2=2.618, the equivalent refractive index of R/a=0.2, 0.3, and 0.4 becomes 2.45, 2.223 and 1.859.

Secondly, the LEE of the reflection effect of the two-dimensional photon crystal is obtained by the simulation analysis using the FDTD method. The FDTD method converts Maxwell's equation into a difference equation in space and time to directly calculate the electromagnetic field intensity. Therefore, it is suitable for the wave analysis of nm structure photon crystals, but cannot directly calculate LEE. On the other hand, the ray tracing method directly calculates the number of rays that randomly radiate tens of thousands of rays to the detector, so it can directly obtain the LEE in the mm structure. However, the wave analysis of nm structure cannot be performed. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal, the cross simulation of the FDTD method and the ray tracing method is required.

[Table 1] Table 1 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - p-type GaN contact layer 200 nm 2.618 2.3%/200 nm - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 2] Table 2 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 150 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 32 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz window 100 nm - 1.494 - - -

[table 3] table 3 R/a m (frequency) Diameter (nm) Period (nm) R/a=0.3 m=3 113 nm 189 nm R/a=0.3 m=4 151 nm 252 nm R/a=0.4 m=3 181 nm 226 nm R/a=0.4 m=4 241 nm 301 nm

Therefore, Table 1 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, Table 2 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device, and Table 3 shows the FDTD method of the reflective two-dimensional photonic crystal Calculate the parameters of the model. Moreover, FIG. 1C shows the calculation model of the ray tracing method, FIG. 1D shows the calculation model of the FDTD method, and FIG. 1E shows the wavelength characteristics of the reflectance of the NC-RC reflector 17 and the aluminum coating film coated on the AlN package 15. As is clear from the figure, the reflectivity of the NC-RC reflector 17 is excellent. The components shown in FIG. 1D are the same as those in FIG. 1A and correspond to Table 2.

(Calculation of LEE using ray tracing method) In the calculation model of the ray tracing method in Figure 1C, the angle θ of the inner side wall of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, so that the inner bottom surface and the inner side walls are NC-RC reflective materials 17 (Inorganic coating film) and calculate the LEE of the deep ultraviolet LED device. In addition, as a comparison of the NC-RC reflector 17, the LEE in the case of an Al reflector, Au reflector, and no reflector was analyzed, and the results are shown in FIG. 1F and Table 4.

[Table 4] Table 4 45 60 75 90 Au reflective film 4.0% 4.0% 3.8% 3.6% Inorganic coating film 4.6% 4.5% 4.3% 3.9% Al coating film 4.3% 4.2% 4.0% 3.8% Non-reflective film 3.7% 3.7% 3.6% 3.5%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 represents a higher LEE compared to other cases. In addition, with regard to the angle of the inner side wall, the LEE is higher at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) In the calculation model of Fig. 1D, first, analyze the formation position of the two-dimensional photonic crystal (2D-PhC) where the LEE growth coefficient (with 2D-PhC output/without 2D-PhC output) becomes the largest. In the calculation model of 2D-PhC selected from Table 3, R/a=0.4, the number of times m=3, the diameter of 181 nm, and the period of 226 nm. Regarding the formation position, the distance G from the well of the multiple quantum well layer to the shortest end face of the 2D-PhC was set as a variable, and the LEE growth coefficient was analyzed by changing it in units of 4 nm when 29 nm≦G≦69 nm. In addition, the rearmost end surface of the 2D-PhC is always the interface between the p-type GaN contact layer 8 and the Ni layer 9. Furthermore, the angle of the NC-RC reflector 17 is selected as 60 degrees based on the result of the above-mentioned ray tracing method. The results are shown in Fig. 1G and Table 5.

[table 5] table 5 Distance between quantum well layer and PhC 29 33 37 41 45 49 53 57 61 65 69 LEE growth factor 0.64 0.59 0.74 1.05 1.47 1.91 2.30 2.57 2.68 2.40 1.74

According to the above results, the formation position of 2D-PhC is when G=61 nm, the LEE growth coefficient becomes the maximum. Since the depth when G=61 nm, which is the formation position of 2D-PhC, is 150 nm, the depth is fixed, and R/a=0.3 (number of times m=3), R/a=0.3 (number of times m) in Table 3 = 4), R/a = 0.4 (time m = 4) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (4.5%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 1H and Table 6.

[Table 6] Table 6 LEE growth factor R/a=0.3 R/a=0.4 Times m=3 1.98 2.68 Times m=4 2.20 2.14 LEE(%) R/a=0.3 R/a=0.4 Times m=3 8.9% 12.1% Times m=4 9.9% 9.6%

(Second Embodiment) As the deep ultraviolet LED device of the second embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 2A(a-1), (a-2) ).

Specifically, starting from the cross-sectional view of Fig. 2A(a-1), there are quartz window 1, sapphire substrate 2, AlN buffer layer 3, n-type AlGaN layer 4, multiple quantum well layer 5, multiple quantum barrier layer ( Or electron blocking layer) 6, p-type AlGaN contact layer 8a, Ni layer 9, Au reflective electrode layer 10, AlN package 15, NC-RC reflector 17, AlN package 15 inner side wall angle θ15a, reflective two-dimensional photonic crystal Periodic structure 100 and void 101(h).

The difference from the first embodiment is that the p-type contact layer of the structure of the deep ultraviolet LED element is replaced with a p-type AlGaN contact layer from the p-type GaN contact layer, and the structure is the same except that.

Moreover, in this embodiment, within the thickness direction of the Ni layer 9 and the p-type AlGaN contact layer 8a, and does not exceed the interface between the p-type AlGaN contact layer 8a and the multiple quantum barrier layer (or electron blocking layer) 6 At the position, a reflective two-dimensional photonic crystal periodic structure 100 having a plurality of holes 101(h) is formed.

In Figure 2B (b-1), it shows the photon band of the TE polarization component of the p-type AlGaN contact layer 8a when the deep ultraviolet light with a wavelength of 280 nm is incident on the two-dimensional photonic crystal (R/a=0.4) The structure is shown in (b-2) to find the relationship between R/a and PBG value using the plane wave expansion method. According to the figure, it can be seen that R/a and PBG have a proportional relationship.

In addition, the parameters required for the calculation of the plane wave expansion method are calculated as follows. The filling rate f of the two-dimensional photonic crystal is calculated using the formula f=(2π/3) ^0.5 ×(R/a) ² . In addition, the equivalent refractive index n _eff of the two-dimensional photonic crystal using the system ^{_{n eff = (n2 2 + (}} n1 2 -n2 2) × f) Formula ^0.5 of calculation. Therefore, if the refractive index of air is n1=1 and the refractive index of the p-type AlGaN contact layer 8a is n2=2.622, the equivalent refractive index of R/a=0.2, 0.3, and 0.4 becomes 2.454, 2.226 and 1.861.

Secondly, the LEE of the reflection effect of the two-dimensional photon crystal is obtained by the simulation analysis using the FDTD method. Therefore, Table 7 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, Table 8 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device, and Table 9 shows the FDTD method of the reflective two-dimensional photon crystal Calculate the parameters of the model. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 1C and FIG. 1D in the first embodiment, so they are not shown in particular.

[Table 7] Table 7 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 8] Table 8 Deep UV LED component component size 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type AlGaN contact layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz window 100 nm - 1.494 - - -

[Table 9] Table 9 R/a m (frequency) Diameter (nm) Period (nm) R/a=0.3 m=2 75 nm 126 nm R/a=0.3 m=3 113 nm 189 nm R/a=0.35 m=2 95 nm 136 nm R/a=0.35 m=3 142 nm 203 nm

(Calculation of LEE using ray tracing method) The inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and the inner side wall are NC-RC reflectors 17 to calculate the LEE of the deep ultraviolet LED device. In addition, as a comparison of NC-RC reflector 17 (inorganic paint coating), LEE in the case of Al coating film, Au reflector film, and non-reflective film was analyzed, and the results are shown in FIG. 2C and Table 10.

[Table 10] Table 10 NiAu_pAlGaN contact 45 60 75 90 Au reflective film 10.5% 10.0% 9.3% 7.9% Inorganic coating film 15.0% 14.7% 14.0% 11.3% Al coating film 12.6% 12.1% 11.3% 9.3% Non-reflective film 8.3% 7.8% 7.3% 6.6%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) First, analyze the formation position of the 2D-PhC with the largest LEE growth coefficient. In the 2D-PhC calculation model selected from Table 9, R/a=0.3, the number of times m=3, the diameter of 113 nm, and the period of 189 nm. Regarding the formation position, the distance G from the well of the multiple quantum well layer 5 to the shortest end face of the 2D-PhC is set as a variable, and the LEE growth coefficient is analyzed by changing it in 4 nm units when 29 nm≦G≦73 nm . In addition, the rearmost end surface of 2DPhC is always set as the interface between the p-type AlGaN contact layer 8a and the Ni layer 9. Furthermore, the angle of the NC-RC reflector 17 is selected as 60 degrees based on the result of the above-mentioned ray tracing method. The results are shown in Fig. 2D and Table 11.

[Table 11] Table 11 29 33 37 41 45 49 53 57 61 65 69 73 NCRC60deg_pAlGaN100 nm_m3_Ra0.30 0.63 0.51 0.44 0.44 0.52 0.65 0.82 1.00 1.17 1.28 1.34 1.34

According to the above results, the formation position of 2D-PhC is when G=69 nm, the LEE growth coefficient becomes the maximum. Since the depth when G=69 nm, which is the formation position of 2D-PhC, becomes 60 nm, the depth is fixed, and R/a=0.3 (time m=2) and R/a=0.35 (time m = 2), R/a = 0.35 (time m = 3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (14.7%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 2E and Table 12.

[Table 12] Table 12 LEE growth factor R/a=0.3 R/a=0.35 Times m=3 1.24 1.41 Times m=4 1.34 1.45 LEE(%) R/a=0.3 R/a=0.35 Times m=3 18.2% 20.7% Times m=4 19.7% 21.3%

(Third Embodiment) As the deep ultraviolet LED device of the third embodiment of the present invention, the structure (cross-sectional view and plan view) of the AlGaN-based deep ultraviolet LED device with the design wavelength λ of 280 nm is shown in FIGS. 3A(a-1), (a-2) ).

This embodiment has the same structure as the second embodiment except that the Ni layer 9 and the Au reflective electrode layer 10 are replaced with the Rh reflective electrode layer 16. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the second embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal, a cross simulation of the FDTD method and the ray tracing method is implemented.

[Table 13] Table 13 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - Rh reflective film - - - 70% - AlN package - - - - 45 degrees~90 degrees

[Table 14] Table 14 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Rh reflective electrode 230 nm - 0.797 2.734 1.0 1.0 p-type AlGaN contact layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz window 100 nm - 1.494 - - -

Table 13 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 14 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. The parameters of the calculation model of the reflective two-dimensional photonic crystal FDTD method are the same as Table 9. Furthermore, the calculation model of the ray tracing method and the calculation model of the FDTD method are not shown in particular.

(Calculation of LEE using ray tracing method) First, set the inner side wall angle θ of the AlN package as a variable and change it to 45 degrees, 60 degrees, 75 degrees, and 90 degrees. The inner bottom surface and the inner side wall are NC-RC reflector 17 (coated with inorganic paint) to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of the NC-RC reflector 17, the LEE in the case of Al reflector, Au reflector, and no reflector was analyzed, and the results are shown in FIG. 3B and Table 15.

[Table 15] Table 15 Rh_pAlGaN contact 45 60 75 90 Au reflective film 12.1% 11.5% 10.8% 9.4% Inorganic coating film 16.6% 16.3% 15.6% 12.9% Al coating film 14.2% 13.7% 12.9% 10.9% Non-reflective film 9.8% 9.3% 8.8% 8.1%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) As in the second embodiment, the formation position of 2D-PhC at which the LEE growth coefficient becomes the largest is G=69 nm, and the LEE growth coefficient becomes the largest. Since the depth at G=69 nm, which is the formation position of 2D-PhC, is 60 nm, the depth is fixed, and R/a=0.3 (number of times m=2) and R/a=0.3 (number of times m) in Table 9 =3) 2D-PhC calculation model with R/a=0.35 (order m=2) and R/a=0.35 (order m=3) to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (16.3%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model, and then The results are shown in Figure 3C and Table 16.

[Table 16] Table 16 LEE growth factor R/a=0.3 R/a=0.35 Times m=3 1.14 1.28 Times m=4 1.12 1.21 LEE(%) R/a=0.3 R/a=0.35 Times m=3 18.6% 20.9% Times m=4 18.3% 19.7%

(Fourth Embodiment) As the deep ultraviolet LED device of the fourth embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 4A(a-1), (a-2) ).

Specifically, from the top of the cross-sectional view of FIG. 4A(a-1), there are a quartz window 1, a sapphire hemispherical lens 20a, a sapphire substrate 2, an AlN buffer layer 3, an n-type AlGaN layer 4, a multiple quantum well layer 5, Multiple quantum barrier layer (or electron barrier layer) 6, p-type AlGaN layer 7, p-type GaN contact layer 8, Ni layer 9, Au reflective electrode layer 10, AlN package 15, NC-RC reflector 17, AlN package 15 The inner side wall angle θ15a, the reflective two-dimensional photonic crystal periodic structure 100, and the cavity 101(h).

As shown in FIG. 4A(a-1), a sapphire hemispherical lens 20a having a radius greater than the outer circle of the sapphire substrate 2 is bonded to the back of the sapphire substrate 2. When the deep ultraviolet light emitted by the multiple quantum well layer 5 is incident on the sapphire substrate 2, the deep ultraviolet light is emitted from the normal direction of the surface of the sapphire hemispherical lens 20a toward the outside, thereby reducing multiple total internal reflections, thereby increasing LEE .

Furthermore, it has the same structure as the first embodiment except for the sapphire hemispherical lens 20a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the first embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 17 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 18 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. The parameters of the calculation model of the reflective two-dimensional photonic crystal FDTD method are the same as Table 3. In addition, FIG. 4B shows the calculation model of the ray tracing method, and FIG. 4C shows the calculation model of the FDTD method. The components shown in FIG. 4C are the same as those in FIG. 4A and correspond to Table 18.

[Table 17] Table 17 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Sapphire dome lens (radius 1mm) 1 mm 1.82 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - p-type GaN contact layer 200 nm 2.618 2.3%/200 nm - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 18] Table 18 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 150 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 32 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Sapphire dome lens 3,350 nm - 1.82 - - - Quartz window 100 nm - 1.494 - - -

(Calculation of LEE using ray tracing method) In the calculation model of the ray tracing method in Fig. 4B, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, so that the inner bottom surface and the inner side walls are NC-RC reflectors 17 and calculate the LEE of the deep ultraviolet LED device. In addition, as a comparison of the NC-RC reflector 17 (inorganic paint coating), the LEE in the case of an Al coating film, an Au reflecting film, and a non-reflecting film was analyzed, and the results are shown in FIG. 4D and Table 19.

[Table 19] Table 19 pGaN contact 45 60 75 90 Au reflective film 9.1% 8.8% 8.5% 6.7% Inorganic coating film 10.4% 10.2% 9.7% 8.8% Al coating film 9.7% 9.4% 9.0% 7.6% Non-reflective film 8.4% 8.2% 8.1% 5.5%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) In the calculation model of FIG. 4C, the angle of the NC-RC reflector 17 is set to 60 degrees as in the first embodiment. In addition, the depth of 150 nm when G=61 nm, which is the formation position of 2D-PhC, was fixed. Then, use the selected R/a=0.3 (number of times m=3), R/a=0.3 (number of times m=4), R/a=0.4 (number of times m=3), and R/a=0.4( The calculation model of 2DPhC with times m=4) is used to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (10.2%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 4E and Table 20.

[Table 20] Table 20 LEE growth factor R/a=0.3 R/a=0.4 Times m=3 1.98 2.7 Times m=4 2.59 2.14 LEE R/a=0.3 R/a=0.4 Times m=3 20.2% 27.5% Times m=4 26.4% 21.8%

(Fifth Embodiment) As the deep ultraviolet LED device of the fifth embodiment of the present invention, the structure (cross-sectional view and plan view) of the AlGaN-based deep ultraviolet LED device with the design wavelength λ of 280 nm is shown in FIGS. 5A(a-1), (a-2) ).

Specifically, from the top of the cross-sectional view of FIG. 5A (a-1), there are quartz window 1, sapphire hemispherical lens 20a, sapphire substrate 2, AlN buffer layer 3, n-type AlGaN layer 4, multiple quantum well layer 5, Multiple quantum barrier layer (or electron blocking layer) 6, p-type AlGaN contact layer 8a, Ni layer 9, Au reflective electrode layer 10, AlN package 15, NC-RC reflector 17, AlN package 15 inner side wall angle θ15a, reflection Type two-dimensional photonic crystal periodic structure 100 and void 101(h).

As shown in FIG. 5A(a-1), a sapphire hemispherical lens 20a having a radius greater than the outer circle of the sapphire substrate 2 is bonded to the back surface of the sapphire substrate 2. When the deep ultraviolet light emitted by the multiple quantum well layer 5 is incident on the sapphire substrate 2, the deep ultraviolet light is emitted from the normal direction of the surface of the sapphire hemispherical lens 20a toward the outside, thereby reducing multiple total internal reflections, thereby increasing LEE .

In addition, it has the same structure as the second embodiment except for the sapphire hemispherical lens 20a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the second embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 21 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 22 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 4B and FIG. 4C in the fourth embodiment, so they are not shown in particular.

[Table 21] Table 21 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Sapphire hemispherical lens (radius 1 mm) 1 mm 1.82 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45°~90°

[Table 22] Table 22 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Sapphire dome lens 3,350 nm - 1.82 - - - Quartz window 100 nm - 1.494 - - -

(Calculation of LEE using ray tracing method) As in the second embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and inner side wall are NC-RC reflector 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of the NC-RC reflector 17 (inorganic paint coating), the LEE in the case of an Al coating film, an Au reflecting film, and a non-reflecting film was analyzed, and the results are shown in FIG. 5B and Table 23.

[Table 23] Table 23 NiAu_pAlGaN contact 45 60 75 90 Au reflective film 19.4% 18.0% 16.6% 11.8% Inorganic coating film 26.3% 25.5% 23.6% 18.4% Al coating film 22.6% 21.2% 19.3% 14.5% AlN 16.2% 15.2% 14.7% 9.2%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) As in the second embodiment, the formation position of 2D-PhC is at G=69 nm, the LEE growth coefficient becomes the maximum. Since the depth when G=69 nm, which is the formation position of 2D-PhC, is 150 nm, the depth is fixed, and R/a=0.3 (time m=2) and R/a=0.35 (time m = 2), R/a = 0.3 (number of times m = 3), R/a = 0.35 (number of times m = 3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (25.5%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 5C and Table 24.

[Table 24] Table 24 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.28 1.37 Times m=3 1.17 1.33 LEE R/a=0.3 R/a=0.35 Times m=2 32.6% 34.9% Times m=3 29.8% 33.9%

(The sixth embodiment) As the deep ultraviolet LED device of the sixth embodiment of the present invention, the structure (cross-sectional view and plan view) of the AlGaN-based deep ultraviolet LED device with the design wavelength λ of 280 nm is shown in FIGS. 6A(a-1), (a-2) ).

In this embodiment, the Ni layer 9 and Au reflective electrode layer 10 in the fifth embodiment are replaced with the Rh reflective electrode layer 16. The other structure is the same as that of the fifth embodiment. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the fifth embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 25 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 26 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 4B and FIG. 4C in the fourth embodiment, so they are not shown in particular.

[Table 25] Table 25 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Sapphire hemispherical lens (radius 1 mm) 1 mm 1.82 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - Rh reflective film - - - 70% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 26] Table 26 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Rh reflective electrode 230 nm - 0.797 2.734 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple boy well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Sapphire dome lens 3,350 nm - 1.82 - - - Quartz window 100 nm - 1.494 - - -

(Calculation of LEE using ray tracing method) As in the fifth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of the NC-RC reflector 17 (inorganic paint coating), the LEE in the case of an Al reflective film, an Au reflective film, and a non-reflective film was analyzed, and the results are shown in FIG. 6B and Table 27.

[Table 27] Table 27 Rh_pAlGaN contact 45 60 75 90 Au reflective film 21.0% 19.5% 18.1% 13.3% Inorganic coating film 27.9% 27.0% 25.2% 20.0% Al reflective film 28.0% 27.2% 25.4% 20.2% Non-reflective film 17.8% 16.7% 16.1% 10.6%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) As in the fifth embodiment, the formation position of 2D-PhC is the maximum LEE growth coefficient when G=69 nm. Since the depth at G=69 nm, which is the formation position of 2D-PhC, is 60 nm, the depth is fixed, and R/a=0.3 (number of times m=2) and R/a=0.3 (number of times m) in Table 9 =3), R/a=0.35 (order m=2), R/a=0.35 (order m=3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector obtained by the ray tracing method and the LEE (27.0%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model, and the result Shown in Figure 6C and Table 28.

[Table 28] Table 28 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.20 1.25 Times m=3 0.94 1.05 LEE R/a=0.3 R/a=0.35 Times m=2 32.4% 33.8% Times m=3 25.4% 28.4%

(The seventh embodiment) As the deep ultraviolet LED device of the seventh embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 7A(a-1), (a-2) ).

The structure of the deep ultraviolet LED element of this embodiment is the same as that of the fourth embodiment.

As shown in FIG. 7A(a-1), a sapphire hemispherical lens 20a is bonded to the back of the sapphire substrate 2. The hemispherical lens covers the inner side wall of the upper surface of the AlN package 15 and above, and transparent is attached to the surface of the hemispherical lens. The resin film 21a also seals the upper outer periphery of the AlN package 15. The reason for sealing with the transparent resin film 21a is to prevent the deep ultraviolet LED element from deteriorating over the years. Furthermore, the radius of the sapphire hemispherical lens 20a is greater than the radius of the outer circle of the inner side wall of the AlN package 15.

With this structure, when deep ultraviolet light is emitted from the quartz to the air without using the quartz window 1 of the fourth embodiment, total internal reflection at the interface is suppressed, and LEE can be improved. Furthermore, compared with the deep ultraviolet LED device of the fourth embodiment, the surface area of the entire inner side wall of the AlN package 15 is about 1/3, so the limitation of the reflectance of the reflective film or the side wall angle is relaxed.

Furthermore, the reflection effect of the two-dimensional photon crystal in the deep ultraviolet LED device and the optimization method are the same as those in the first embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, the cross simulation of the FDTD method and the ray tracing method is required.

Therefore, Table 29 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 30 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. The parameters of the calculation model of the reflective two-dimensional photonic crystal FDTD method are the same as Table 3. In addition, FIG. 7B shows the calculation model of the ray tracing method, and FIG. 7C shows the calculation model of the FDTD method. The components shown in FIG. 7C are the same as those in FIG. 7A and correspond to Table 30.

[Table 29] Table 29 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Transparent resin film 200 μm 1.353 100% - - Sapphire hemispherical lens radius: 1.8 mm~2.4 mm 1.8 mm~2.4 mm 1.82 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - p-type GaN contact layer 200 nm 2.618 2.3%/200 nm - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 30] Table 30 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 150 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 32 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Sapphire dome lens 3,350 nm - 1.82 - - - Transparent resin film 100 nm - 1.353 - - -

(Calculation of LEE using ray tracing method) In the calculation model of the ray tracing method in Fig. 7B, the angle θ of the inner side wall of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, so that the inner bottom surface and the inner side walls are NC-RC reflective materials 17 and calculate the LEE of the deep ultraviolet LED device. In addition, as a comparison of the NC-RC reflector 17 (inorganic paint coating), the LEE in the case of an Al coating film, an Au reflecting film, and a non-reflecting film was analyzed, and the results are shown in FIG. 7D and Table 31.

[Table 31] Table 31 pGaN contact 45 60 75 90 Au reflective film 11.3% 11.2% 11.2% 11.1% Inorganic coating film 11.5% 11.5% 11.4% 11.3% Al coating film 11.4% 11.4% 11.3% 11.2% Non-reflective film 11.2% 11.1% 11.1% 11.1%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a slightly higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, there is not much angular dependence but a higher LEE is shown in the range of 45 degrees to 75 degrees.

(Calculation of LEE using FDTD method) In the calculation model of FIG. 7C, the angle of the NC-RC reflector 17 is set to 75 degrees according to the result of the ray tracing method. In addition, the depth of 150 nm when G=61 nm, which is the formation position of 2D-PhC, was fixed. Then, use the selected R/a=0.3 and the number of times m=3, R/a=0.3 and the number of times m=4, R/a=0.4 and the number of times m=3, R/a=0.4 and the number of times m= 4 of 2DPhC calculation model to analyze LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the LEE (11.4%) of the NC-RC reflector 17 and angle 75 degrees obtained by the ray tracing method to calculate the LEE of each 2D-PhC calculation model, and then The results are shown in Figure 7E and Table 32.

[Table 32] Table 32 LEE growth factor R/a=0.3 R/a=0.4 Times m=3 2.07 2.74 Times m=4 2.40 2.28 LEE R/a=0.3 R/a=0.4 Times m=3 23.6% 31.2% Times m=4 27.4% 26.0%

(Eighth Embodiment) As the deep ultraviolet LED device of the eighth embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 8A(a-1), (a-2) ).

The structure of the deep ultraviolet LED of this embodiment is the same as that of the fifth embodiment, but as shown in FIG. 8A(a-1), a sapphire hemispherical lens 20a is bonded to the back of the sapphire substrate 2. The hemispherical lens covers the AlN package 15 Above the inner side wall of the upper surface, a transparent resin film 21a is attached to the surface of the hemispherical lens, and the upper outer periphery of the AlN package 15 is sealed. The reason for sealing with the transparent resin film 21a is to prevent the deep ultraviolet LED element from deteriorating over the years. Furthermore, the radius of the sapphire hemispherical lens 20a is greater than the radius of the outer circle of the inner side wall of the AlN package 15.

Furthermore, the structure of the deep ultraviolet LED element from the sapphire substrate 2 to the Au reflective electrode layer 10 is the same as that of the second embodiment. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the second embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 33 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 34 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 7B and FIG. 7C in the seventh embodiment, so they are not shown in particular.

[Table 33] Table 33 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Transparent resin film 200 μm 1.353 100% - - Sapphire hemispherical lens radius: 1.8 mm~2.4 mm 1.8 mm~2.4 mm 1.82 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 34] Table 34 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Sapphire dome lens 3,350 nm - 1.82 - - - Transparent resin film 100 nm - 1.353 - - -

(Calculation of LEE using ray tracing method) As in the fifth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of NC-RC reflector 17 (inorganic paint coating), LEE in the case of Al coating film, Au reflecting film, and non-reflecting film was analyzed, and the results are shown in FIG. 8B and Table 35.

[Table 35] Table 35 NiAu_pAlGaN contact 45 60 75 90 Au reflective film 23.5% 23.4% 24.0% 23.7% Inorganic coating film 28.4% 28.0% 27.3% 26.3% Al coating film 26.4% 25.9% 25.3% 24.8% Non-reflective film 22.7% 22.8% 22.8% 22.7%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, there is not much angular dependence but a higher LEE is shown in the range of 45 degrees to 75 degrees.

(Calculation of LEE using FDTD method) As in the fifth embodiment, the formation position of 2D-PhC is when G=69 nm, the LEE growth coefficient becomes the maximum. Since the depth when G=69 nm, which is the formation position of 2D-PhC, is 60 nm, the depth is fixed, and R/a=0.3 (time m=2) and R/a=0.35 (time m = 2), R/a = 0.3 (number of times m = 3), R/a = 0.35 (number of times m = 3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the LEE (27.3%) of the NC-RC reflector 17 and angle 75 degrees obtained by the ray tracing method to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 8C and Table 36. [Table 36] Table 36 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.31 1.48 Times m=3 1.30 1.45 LEE R/a=0.3 R/a=0.35 Times m=2 35.8% 40.4% Times m=3 35.5% 39.6%

(Ninth Embodiment) As the deep ultraviolet LED device of the ninth embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 9A(a-1), (a-2) ).

The structure of the deep ultraviolet LED element of this embodiment is the same as that of the sixth embodiment, but as shown in FIG. 9A(a-1), a sapphire hemispherical lens 20a is bonded to the back surface of the sapphire substrate 2. The hemispherical lens covers the AlN package 15 Above the inner side wall of the upper surface, a transparent resin film 21a is attached to the surface of the hemispherical lens, and the upper outer periphery of the AlN package 15 is sealed. The reason for sealing with the transparent resin film 21a is to prevent the deep ultraviolet LED element from deteriorating over the years. Furthermore, the radius of the sapphire hemispherical lens 20a is greater than the radius of the outer circle of the inner side wall of the AlN package 15.

Furthermore, the structure of the deep ultraviolet LED from the sapphire substrate 2 to the Rh reflective electrode layer 16 is the same as that of the second embodiment. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the second embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 37 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 38 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 7B and FIG. 7C in the seventh embodiment, so they are not shown in particular.

[Table 37] Table 37 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Transparent resin film 200 μm 1.353 100% - - Sapphire hemispherical lens radius: 1.8 mm~2.4 mm 1.8 mm~2.4 mm 1.82 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - Rh reflective film - - - 70% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 38] Table 38 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Rh reflective electrode 230 nm - 0.797 2.734 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Sapphire dome lens 3,350 nm - 1.82 - - - Transparent resin film 100 nm - 1.353 - - -

(Calculation of LEE using ray tracing method) As in the sixth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of NC-RC reflector 17 (inorganic paint coating), LEE in the case of Al coating film, Au reflector film, and non-reflective film was analyzed, and the results are shown in FIG. 9B and Table 39.

[Table 39] Table 39 Rh_pAlGaN contact 45 60 75 90 Au reflective film 26.6% 26.1% 25.6% 25.3% Inorganic coating film 30.0% 29.6% 28.9% 27.9% Al coating film 28.0% 27.6% 26.9% 26.3% Non-reflective film 25.3% 24.8% 24.4% 24.3%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, there is not much angular dependence but a higher LEE is shown in the range of 45 degrees to 75 degrees.

(Calculation of LEE using FDTD method) As in the sixth embodiment, the formation position of 2D-PhC is at G=69 nm, the LEE growth coefficient becomes the maximum. Since the depth when G=69 nm, which is the formation position of 2D-PhC, is 60 nm, the depth is fixed, and R/a=0.3 (time m=2) and R/a=0.35 (time m = 2), R/a = 0.3 (number of times m = 3), R/a = 0.35 (number of times m = 3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the LEE (28.9%) of the NC-RC reflector 17 and angle 75 degrees obtained by the ray tracing method to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 9C and Table 40.

[Table 40] Table 40 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.22 1.33 Times m=3 1.04 1.16 LEE R/a=0.3 R/a=0.35 Times m=2 35.3% 38.4% Times m=3 30.1% 33.5%

(Tenth Embodiment) As a deep ultraviolet LED device of the tenth embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 10A(a-1), (a-2) ).

As shown in FIG. 10A(a-1), this embodiment has the same structure as the fourth embodiment except for the quartz hemispherical lens 22a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the fourth embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 41 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 42 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. The parameters of the calculation model of the reflective two-dimensional photonic crystal FDTD method are the same as Table 3. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 4B and FIG. 4C in the fourth embodiment, so they are not shown in particular.

[Table 41] Table 41 Deep ultraviolet LED component component size: l.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Quartz hemispherical lens (radius 1 mm) 1 mm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - p-type GaN contact layer 200 nm 2.618 2.3%/200 nm - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 42] Table 42 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 150 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 32 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz dome lens 3,350 nm - 1.494 - - - Quartz window 100 nm - 1.494 - - -

(Calculation of LEE using ray tracing method) As in the fourth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and the inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of NC-RC reflector 17 (inorganic paint coating), LEE in the case of Al coating film, Au reflector film, and non-reflective film was analyzed, and the results are shown in FIG. 10B and Table 43.

[Table 43] Table 43 pGaN contact 45 60 75 90 Au reflective film 7.9% 7.2% 6.3% 4.9% Inorganic coating film 9.3% 9.0% 8.5% 7.1% Al coating film 8.6% 8.0% 7.3% 5.9% Non-reflective film 7.0% 6.3% 5.2% 3.8%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) In the calculation model of FIG. 4C, the angle of the NC-RC reflector 17 is set to 60 degrees as in the first embodiment. In addition, the depth of 150 nm when G=61 nm, which is the formation position of 2D-PhC, was fixed. Then, use the selected R/a=0.3 (number of times m=3), R/a=0.3 (number of times m=4), R/a=0.4 (number of times m=3), and R/a=0.4( The calculation model of 2DPhC with times m=4) is used to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (9.0%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 10C and Table 44.

[Table 44] Table 44 LEE growth factor R/a=0.3 R/a=0.4 Times m=3 2.11 2.82 Times m=4 2.41 2.32 LEE(%) R/a=0.3 R/a=0.4 Times m=3 19% 25.4% Times m=4 21.7% 20.9%

(Eleventh embodiment) As the deep ultraviolet LED device of the eleventh embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 11A(a-1), (a-2) ).

As shown in FIG. 11A(a-1), this embodiment has the same structure as the fifth embodiment except for the quartz hemispherical lens 22a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the fifth embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 45 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 46 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 4B and FIG. 4C in the fourth embodiment, so they are not shown in particular.

[Table 45] Table 45 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Quartz hemispherical lens (radius 1 mm) 1 mm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 46] Table 46 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz dome lens 3,350 nm - 1.494 - - - Quartz window 100 nm - 1.494 - - -

(Calculation of LEE using ray tracing method) As in the fifth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of the NC-RC reflector 17, the LEE in the case of an Al coating film, an Au reflecting film, and a non-reflecting film was analyzed, and the results are shown in FIG. 11B and Table 47.

[Table 47] Table 47 NiAu_pAlGaN contact 45 60 75 90 Au reflective film 16.5% 14.4% 11.9% 8.0% Inorganic coating film 23.6% 22.8% 21.0% 14.8% Al coating film 19.7% 18.1% 15.7% 10.7% AlN 13.0% 10.8% 8.4% 5.5%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) As in the fifth embodiment, the formation position of 2D-PhC is the maximum LEE growth coefficient when G=69 nm. Since the depth when G=69 nm, which is the formation position of 2D-PhC, is 150 nm, the depth is fixed, and R/a=0.3 (time m=2) and R/a=0.35 (time m = 2), R/a = 0.3 (number of times m = 3), R/a = 0.35 (number of times m = 3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (22.8%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 11C and Table 48.

[Table 48] Table 48 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.27 1.39 Times m=3 1.36 1.46 LEE R/a=0.3 R/a=0.35 Times m=2 29% 31.7% Times m=3 31% 33.3%

(12th embodiment) As a deep ultraviolet LED device of the twelfth embodiment of the present invention, the structure (cross-sectional view and plan view) of an AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 12A(a-1), (a-2) ).

As shown in FIG. 12A(a-1), this embodiment has the same structure as the sixth embodiment except for the quartz hemispherical lens 22a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the sixth embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 49 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 50 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 4B and FIG. 4C in the fourth embodiment, so they are not shown in particular.

[Table 49] Table 49 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 μm 1.494 100% - - Quartz hemispherical lens (radius 1 mm) 1 mm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - Rh reflective film - - - 70% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 50] Table 50 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Rh reflective electrode 230 nm - 0.797 2.734 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz dome lens 3,350 nm - 1.494 - - - Quartz window 100 nm - 1.494 - - -

(Calculation of LEE using ray tracing method) As in the sixth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of NC-RC reflector 17 (inorganic paint coating), LEE in the case of Al reflector, Au reflector, and non-reflective film was analyzed, and the results are shown in FIG. 12B and Table 51.

[Table 51] Table 51 Rh_pAlGaN contact 45 60 75 90 Au reflective film 18.0% 15.9% 13.4% 9.4% Inorganic coating film 25.2% 24.3% 22.5% 16.4% Al coating film 21.3% 19.6% 17.2% 12.2% Non-reflective film 14.5% 12.3% 9.9% 6.9%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, a higher LEE is shown at 45 degrees to 60 degrees.

(Calculation of LEE using FDTD method) As in the sixth embodiment, the formation position of 2D-PhC is at G=69 nm, the LEE growth coefficient becomes the maximum. Since the depth at G=69 nm, which is the formation position of 2D-PhC, is 60 nm, the depth is fixed, and R/a=0.3 (number of times m=2) and R/a=0.3 (number of times m) in Table 9 =3), R/a=0.35 (order m=2), R/a=0.35 (order m=3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the NC-RC reflector 17 obtained by the ray tracing method and the LEE (24.3%) at an angle of 60 degrees to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 12C and Table 52.

[Table 52] Table 52 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.16 1.25 Times m=3 1.11 1.17 LEE R/a=0.3 R/a=0.35 Times m=2 28.2% 30.4% Times m=3 27.0% 28.4%

(13th embodiment) As the deep ultraviolet LED device of the thirteenth embodiment of the present invention, the structure (cross-sectional view and plan view) of the AlGaN-based deep ultraviolet LED device whose design wavelength λ is 280 nm is shown in FIGS. 13A(a-1), (a-2) ).

As shown in FIG. 13A(a-1), this embodiment has the same structure as the seventh embodiment except for the quartz hemispherical lens 22a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the seventh embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 53 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 54 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. The parameters of the calculation model of the reflective two-dimensional photonic crystal FDTD method are the same as Table 3. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 7B and FIG. 7C in the seventh embodiment, so they are not shown in particular.

[Table 53] Table 53 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Transparent resin film 200 μm 1.353 100% - - Quartz hemispherical lens radius: 1.8 mm~2.4 mm 1.8 mm~2.4 mm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - p-type GaN contact layer 200 nm 2.618 2.3%/200 nm - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 54] Table 54 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 150 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 32 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz dome lens 3,350 nm - 1.494 - - - Transparent resin film 100 nm - 1.353 - - -

(Calculation of LEE using ray tracing method) In the calculation model of the ray tracing method in Fig. 7B, the angle θ of the inner side wall of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, so that the inner bottom surface and the inner side walls are NC-RC reflective materials 17 and calculate the LEE of the deep ultraviolet LED device. In addition, as a comparison of the NC-RC reflector 17 (inorganic paint coating), the LEE in the case of an Al coating film, an Au reflecting film, and a non-reflecting film was analyzed, and the results are shown in FIG. 13B and Table 55.

[Table 55] Table 55 pGaN contact 45 60 75 90 Au reflective film 9.5% 9.5% 9.4% 9.3% Inorganic coating film 9.8% 9.8% 9.7% 9.5% Al coating film 9.7% 9.6% 9.5% 9.4% Non-reflective film 9.3% 9.3% 9.3% 9.3%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a slightly higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, there is not much angular dependence but a higher LEE is shown in the range of 45 degrees to 75 degrees.

(Calculation of LEE using FDTD method) In the calculation model of FIG. 7C, the angle of the NC-RC reflector 17 is set to 75 degrees according to the result of the ray tracing method. In addition, the depth of 150 nm when G=61 nm, which is the formation position of 2D-PhC, was fixed. Then, use the selected R/a=0.3 and the number of times m=3, R/a=0.3 and the number of times m=4, R/a=0.4 and the number of times m=3, R/a=0.4 and the number of times m= 4 of 2DPhC calculation model to analyze LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the LEE (9.7%) of the NC-RC reflector 17 and angle 75 degrees obtained by the ray tracing method to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 13C and Table 56.

[Table 56] Table 56 LEE growth factor R/a=0.3 R/a=0.4 Times m=3 1.88 2.51 Times m=4 2.15 2.04 LEE R/a=0.3 R/a=0.4 Times m=3 18.2% 24.3% Times m=4 20.9% 19.8%

(14th embodiment) As the deep ultraviolet LED device of the fourteenth embodiment of the present invention, the structure (cross-sectional view and plan view) of the AlGaN-based deep ultraviolet LED device with a design wavelength λ of 280 nm is shown in FIGS. 14A(a-1), (a-2) ).

This embodiment, as shown in Fig. 14A(a-1), has the same structure as the eighth embodiment except for the quartz hemispherical lens 22a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the eighth embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 57 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 58 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 7B and FIG. 7C in the seventh embodiment, so they are not shown in particular.

[Table 57] Table 57 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Transparent resin film 200 μm 1.353 100% - - Quartz hemispherical lens radius: 1.8 mm~2.4 mm 1.8 mm~2.4 mm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - NiAu reflective film - - - 30% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45°~90°

[Table 58] Table 58 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 200 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz dome lens 3,350 nm - 1.494 - - - Transparent resin film 100 nm - 1.353 - - -

(Calculation of LEE using ray tracing method) As in the eighth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and the inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of the NC-RC reflector 17 (inorganic paint coating), the LEE in the case of an Al coating film, an Au reflecting film, and a non-reflecting film was analyzed, and the results are shown in FIG. 14B and Table 59.

[Table 59] Table 59 NiAu_pAlGaN contact 45 60 75 90 Au reflective film 21.8% 21.3% 20.9% 20.0% Inorganic coating film 25.6% 25.0% 24.6% 22.7% Al coating film 23.5% 23.0% 22.5% 21.2% Non-reflective film 20.0% 19.7% 19.3% 18.9%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, there is not much angular dependence but a higher LEE is shown in the range of 45 degrees to 75 degrees.

(Calculation of LEE using FDTD method) As in the eighth embodiment, the formation position of 2D-PhC is at G=69 nm, the LEE growth coefficient becomes the maximum. Since the depth when G=69 nm, which is the formation position of 2D-PhC, is 60 nm, the depth is fixed, and R/a=0.3 (time m=2) and R/a=0.35 (time m = 2), R/a = 0.3 (number of times m = 3), R/a = 0.35 (number of times m = 3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the LEE (24.6%) of the NC-RC reflector 17 and angle 75 degrees obtained by the ray tracing method to calculate the LEE of each 2D-PhC calculation model. The results are shown in Fig. 14C and Table 60.

[Table 60] Table 60 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.42 1.63 Times m=3 1.31 1.47 LEE R/a=0.3 R/a=0.35 Times m=2 34.9% 40.1% Times m=3 32.2% 36.2%

(Fifteenth embodiment) As the deep ultraviolet LED device of the fifteenth embodiment of the present invention, the structure (cross-sectional view and plan view) of the AlGaN-based deep ultraviolet LED device whose design wavelength λ is 280 nm is shown in FIGS. 15A(a-1), (a-2) ).

As shown in FIG. 15A(a-1), this embodiment has the same structure as the ninth embodiment except for the quartz hemispherical lens 22a. In addition, the reflection effect of the two-dimensional photon crystal and the optimization method are also the same as in the ninth embodiment. Therefore, in order to obtain the LEE of the reflection effect of the photon crystal and the hemispherical lens effect, a cross simulation of the FDTD method and the ray tracing method was implemented.

Therefore, Table 61 shows the parameters of the calculation model of the ray tracing method of the deep ultraviolet LED device, and Table 62 shows the parameters of the calculation model of the FDTD method of the deep ultraviolet LED device. In addition, the parameters of the calculation model of the FDTD method of the reflective two-dimensional photon crystal refer to Table 9. In addition, the calculation model of the ray tracing method and the calculation model of the FDTD method are substantially the same as those in FIG. 7B and FIG. 7C in the seventh embodiment, so they are not shown in particular.

[Table 61] Table 61 Deep ultraviolet LED component component size: 1.2 mm□ thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Transparent resin film 200 μm 1.353 100% - - Quartz hemispherical lens radius: 1.8 mm~2.4 mm 1.8 mm~2.4 mm 1.494 100% - - Sapphire substrate 430 μm 1.82 100% - - AlN buffer layer 2 μm 2.285 100% - - AlGaN layer 2 μm 2.579 100% - - Rh reflective film - - - 70% - Inorganic coating film - - - 91% - Au reflective film - - - 38% - Al coating film - - - 65% - AlN package - - - - 45 degrees~90 degrees

[Table 62] Table 62 Deep ultraviolet LED component component size: 3,003 nm□ Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film »200 nm - 1.8 0.06 1.0 3.3 Rh reflective electrode 230 nm - 0.797 2.734 1.0 1.0 p-type AlGaN layer 100 nm 60% 2.622 - - - Multiple quantum barrier layers: 2 pairs of block valleys 11 nm/6 nm 6 nm/6 nm 80% 65% 2.444 2.579 -- -- -- Multiple quantum well layers: 3 pairs of well barriers 2 nm/2 nm/2 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 -- -- -- n-type AlGaN layer 300 nm 65% 2.579 - - - AlN buffer layer 400 nm 100% 2.285 - - - Sapphire substrate 1,300 nm - 1.82 - - - Quartz dome lens 3,350 nm - 1.494 - - - Transparent resin film 100 nm - 1.353 - - -

(Calculation of LEE using ray tracing method) As in the ninth embodiment, the inner side wall angle θ of the AlN package is set as a variable and changed to 45 degrees, 60 degrees, 75 degrees, and 90 degrees, and the inner bottom surface and inner side wall are NC-RC reflectors 17 to calculate the deep ultraviolet LEE of LED device. In addition, as a comparison of NC-RC reflector 17 (inorganic paint coating), LEE in the case of Al coating film, Au reflector film, and non-reflective film was analyzed, and the results are shown in FIG. 15B and Table 63.

[Table 63] Table 63 Rh_pAlGaN contact 45 60 75 90 Au reflective film 23.4% 22.9% 22.5% 21.6% Inorganic coating film 27.2% 26.7% 26.2% 24.3% Al coating film 25.1% 24.6% 24.1% 22.8% Non-reflective film 21.6% 21.3% 20.9% 20.6%

According to the above results, the LEE of the deep ultraviolet LED device with the NC-RC reflector 17 shows a higher LEE compared to other cases. In addition, regarding the angle of the inner side wall, there is not much angular dependence but a higher LEE is shown in the range of 45 degrees to 75 degrees.

(Calculation of LEE using FDTD method) As in the ninth embodiment, the formation position of 2D-PhC is at G=69 nm, the LEE growth coefficient becomes the maximum. Since the depth when G=69 nm, which is the formation position of 2D-PhC, is 60 nm, the depth is fixed, and R/a=0.3 (time m=2) and R/a=0.35 (time m = 2), R/a = 0.3 (number of times m = 3), R/a = 0.35 (number of times m = 3) 2D-PhC calculation model to analyze the LEE growth coefficient. Then, multiply the LEE growth coefficients obtained above by the LEE (26.2%) of the NC-RC reflector 17 and angle 75 degrees obtained by the ray tracing method to calculate the LEE of each 2D-PhC calculation model. The results are shown in Figure 15C and Table 64.

[Table 64] Table 64 LEE growth factor R/a=0.3 R/a=0.35 Times m=2 1.32 1.48 Times m=3 1.08 1.20 LEE R/a=0.3 R/a=0.35 Times m=2 34.6% 38.8% Times m=3 28.3% 31.4%

As a comparative example from the first embodiment to the fifteenth embodiment, the thickness of the sapphire substrate 2 was changed to 130 um, 280 um, and 430 um, and the thickness of the sapphire substrate 2 and the PhC-free LED were analyzed by ray tracing method The relationship between LEE. Except for the thickness of the sapphire substrate 2, it is the same as the figure in the above embodiment, so it is not shown in particular. The results are shown in FIGS. 16A to 16C and Tables 65 to 69.

Here, FIG. 16A is a diagram showing, as a comparative example, the thickness of the sapphire substrate was changed to 130 μm, 280 μ, and 430 μm, and the relationship between the thickness of the sapphire substrate and the LEE of the PhC-free LED was obtained by analyzing the ray tracing method. Fig. 16B is the analysis result of LEE when a sapphire lens with a quartz window and a quartz lens are used as a comparative example. FIG. 16C is the analysis result of the light extraction efficiency when using a sapphire lens with a transparent resin film and a quartz lens as a comparative example.

[Table 65] Table 65 130 280 430 pGaN contact 4.0% 4.5% 4.5% NiAu_pAlGaN contact 14.5% 14.8% 14.7% Rh_pAlGaN contact 16.2% 16.5% 16.3%

[Table 66] Table 66 Sapphire Lenz 130 280 430 pGaN contact 12.1% 11.4% 10.2% NiAu_pAlGaN contact 30.2% 28.0% 25.5% Rh_pAlGaN contact 31.8% 29.7% 27.0%

[Table 67] Table 67 Quartz Lenz 130 280 430 pGaN contact 8.5% 9.0% 9.0% NiAu_pAlGaN contact 22.2% 22.4% 22.8% Rh_pAlGaN contact 23.9% 24.0% 24.3%

[Table 68] Table 68 Sapphire Lenz 130 280 430 pGaN contact 13.3% 12.6% 11.4% NiAu_pAlGaN contact 34.7% 31.0% 27.3% Rh_pAlGaN contact 36.4% 32.6% 28.9%

[Table 69] Table 69 Quartz Lenz 130 280 430 pGaN contact 9.3% 9.7% 9.7% NiAu_pAlGaN contact 27.5% 25.1% 24.6% Rh_pAlGaN contact 25.9% 26.8% 26.2%

In addition, the LEE growth coefficient and the maximum value of LEE in the first to fifteenth embodiments (the thickness of the sapphire substrate 2 is all 430 um and PhC) is compared with the LEE of the LED without PhC and the LED with PhC in the above comparative example The maximum values are summarized in Table 70. Furthermore, the maximum LEE of the LED with PhC in the above comparative example = the maximum LEE of the LED without PhC in the above comparative example x the maximum LEE growth coefficient.

[Table 70] Table 70 Implementation form Hemispherical lens material P-type contact layer P-type electrode Maximum LEE growth coefficient LEE (%) maximum Comparative example_Maximum value of LEE (%) without PhC Comparative example_Maximum value of LEE(%) with PhC Sapphire substrate thickness No. 1 - GaN NiAu 2.68 12.1% 4.5% 12.1% 430 μm 2nd - AlGaN NiAu 1.45 21.3% 14.8% 21.5% 280 μm 3rd - AlGaN Rh 1.28 20.9% 16.5% 21.1% 280 μm 4th sapphire GaN NiAu 2.7 27.5% 12.1% 32.7% 130 μm number 5 sapphire AlGaN NiAu 1.37 34.9% 30.2% 41.4% 130 μm number 6 sapphire AlGaN Rh 1.25 33.8% 31.8% 39.8% 130 μm 7th sapphire GaN NiAu 2.74 31.2% 13.3% 36.4% 130 μm number 8 sapphire AlGaN NiAu 1.48 40.4% 34.7% 51.4% 130 μm 9th sapphire AlGaN Rh 1.33 38.4% 36.4% 48.4% 130 μm the 10th quartz GaN NiAu 2.82 25.4% 9.0% 25.4% 430 μm number 11 quartz AlGaN NiAu 1.46 33.3% 22.8% 33.3% 430 μm 12th quartz AlGaN Rh 1.25 30.4% 24.3% 30.4% 430 μm 13th quartz GaN NiAu 2.51 24.3% 9.7% 24.3% 280 μm 14th quartz AlGaN NiAu 1.63 40.1% 27.5% 44.8% 130 μm 15th quartz AlGaN Rh 1.48 38.8% 26.8% 40.7% 280 μm

Comparing the results in Table 70, it can be confirmed that in the p-type GaN contact LED, the LEE growth factor becomes approximately 2.8 times due to the reflection effect of the reflective PhC. In addition, the sapphire hemispherical lens is joined to increase the growth factor of LEE by 2.7 times, so that the integrated photon effect obtained by the reflective PhC and hemispherical lens is 7 times or more at the maximum.

It is confirmed that in the p-type AlGaN contact LED, the growth factor of LEE becomes 1.28~1.45 times due to the reflection effect of the reflective PhC. In addition, the sapphire hemispherical lens is joined to increase the growth factor of LEE to 2.0 times, so that the integrated photonic effect obtained by the reflective PhC and hemispherical lens joining is less than 3 times at most. Furthermore, the maximum LEE at this time is 51.4%. When a part of the sapphire hemispherical lens is bonded, the LEE growth factor is increased by 1.2 times by making the thickness of the sapphire substrate 2 thinner, but this is not enough to compensate for the increase in the cost of grinding the back of the sapphire substrate 2.

(16th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 1A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side contains a reflective electrode layer (Au) 10, a metal layer (Ni) 9, a p-type GaN contact layer 8, a p-type AlGaN layer 7, a multiple quantum barrier layer (or electron barrier layer) 6, a multiple quantum well layer 5 , Steps of the laminated structure of n-type AlGaN layer 4, AlN buffer layer 3, and sapphire substrate 2.

In this step, there are the following steps: 1) Forming a reflective two-dimensional photonic crystal periodic structure 100, which has a range of the thickness direction of the metal layer 9 and the p-type GaN contact layer 8 and does not exceed the p-type GaN contact layer A plurality of holes 101(h) at the location of the interface between 8 and the p-type AlGaN layer 7; 2) Prepare a mold for forming the reflective two-dimensional photonic crystal periodic structure 100; 3) A resist layer is formed on the p-type GaN contact layer 8, and the structure of the mold is transferred by the nanoimprint method; 4) The p-type GaN contact layer 8 is etched using the resist layer with the above structure transferred as a mask to form a two-dimensional photonic crystal periodic structure; 5) Forming the reflective two-dimensional photonic crystal 100, and then sequentially forming the metal layer 9 and the reflective electrode layer 10 by the oblique evaporation method; 6) After cutting the sapphire substrate 2, deep ultraviolet LED components are made; 7) Prepare a surface mount aluminum nitride ceramic package with an inner side wall angle of 45 degrees to 60 degrees; 8) The inner bottom surface and inner side wall of the above-mentioned package 15 are coated with NC-RC reflector 17 with a reflectance of 91% or more relative to the design wavelength λ; 9) Install deep ultraviolet LED components in the above package 15; and 10) Seal the outermost surface of the package 15 with a quartz window.

Nanoimprinting is a technology that transfers the photonic crystal pattern of the mold to a large area to be processed. In addition, by using a resin mold, transfer can be performed even if the processed surface is warped by about several hundred microns. Furthermore, if a two-layer resist is used, the fluidity and the etching selection ratio with respect to the object to be processed can be obtained, so the photonic crystal can be processed with high precision.

(17th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 2A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Au) 10, the metal layer (Ni) 9, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, and the n-type AlGaN layer 4 , AlN buffer layer 3, and the step of the laminated structure of the sapphire substrate 2.

In this step, the difference from the sixteenth embodiment is that the p-type GaN contact layer is replaced with a p-type AlGaN contact layer, and only the differences from the sixteenth embodiment are specifically shown below. 1) In the step of forming the two-dimensional photonic crystal periodic structure 100, within the thickness direction of the metal layer 9 and the p-type AlGaN contact layer 8a, and not exceed the p-type AlGaN contact layer 8a and the multiple quantum barrier layer (or electronic The position of the interface of the barrier layer) 6 is provided with a plurality of holes 101 (h). In the steps 2) to 10) described in the sixteenth embodiment, the p-type GaN contact layer is replaced with a p-type AlGaN contact layer, which is the same as the sixteenth embodiment.

(18th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 3A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Rh) 16, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, the n-type AlGaN layer 4, the AlN buffer layer 3, and The step of the laminated structure of the sapphire substrate 2.

In this step, the only difference from the seventeenth embodiment is that there is no metal layer (Ni) 9 in this structure, and the reflective electrode layer (Au) 10 is replaced with a reflective electrode layer (Rh) 16. Therefore, it can be explained by replacing the reflective electrode (Au) and the metal layer (Ni) 9 of the steps 1) to 10) described in the seventeenth embodiment with the reflective electrode (Rh) 16.

(19th embodiment) Regarding the manufacturing method of the deep ultraviolet LED, as shown in FIG. 4A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side contains a reflective electrode layer (Au) 10, a metal layer (Ni) 9, a p-type GaN contact layer 8, a p-type AlGaN layer 7, a multiple quantum barrier layer (or electron barrier layer) 6, a multiple quantum well layer 5 , Steps of the laminated structure of n-type AlGaN layer 4, AlN buffer layer 3, and sapphire substrate 2. Furthermore, there is a step of bonding a sapphire hemispherical lens 20a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the steps for producing the above-mentioned laminated structure and LED elements are the same as the steps described in 1) to 6) of the 16th embodiment. After the LED element of the above step 6) is manufactured, the steps described below are used to join the sapphire hemispherical lens 20a. After the sapphire hemispherical lens 20a is joined, the steps described in 7) to 10) of the 16th embodiment are the same step. have: 1) The same procedure as 1) of the 16th embodiment, 2) The same procedure as 2) of the 16th embodiment, 3) The same procedure as 3) of the 16th embodiment, 4) The same procedure as 4) of the 16th embodiment, 5) Same procedure as 5) of the 16th embodiment, 6) The same procedure as 6) of the 16th embodiment, 7) The step of preparing a sapphire hemispherical lens 20a with a radius greater than the circumscribed circle of the LED element substrate, 8) The step of flattening the back surface of the LED element substrate and the back surface of the sapphire hemispherical lens 20a, 9) The step of activating the back surface of the sapphire hemispherical lens 20a and the back surface of the LED element substrate by using ion beam or atmospheric piezoelectric slurry, 10) The step of bonding the back surface of the surface-activated sapphire hemispherical lens 20a to the back surface of the LED element substrate, 11) The same procedure as 7) of the 16th embodiment, 12) The same procedure as 8) of the 16th embodiment, 13) The same procedure as 9) of the 16th embodiment, 14) The procedure is the same as 10) of the 16th embodiment. In addition, the effects of nanoimprint, resin mold, and two-layer resist are also the same as in the sixteenth embodiment.

(20th embodiment) Regarding the manufacturing method of the deep ultraviolet LED, as shown in FIG. 5A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Au) 10, the metal layer (Ni) 9, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, and the n-type AlGaN layer 4 , AlN buffer layer 3, and the step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a sapphire hemispherical lens 20a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the steps for producing the above-mentioned laminated structure and LED elements are the same as the steps described in 1) to 6) of the seventeenth embodiment. After the LED element of the above step 6) is produced, after the steps 7) to 10) of bonding the sapphire hemispherical lens 20a described in the 19th embodiment, the sapphire hemispherical lens 20a is bonded again to have the same as described in the 17th embodiment The steps described in 7) to 10) are the same. have: 1) The same procedure as 1) of the 17th embodiment, 2) The procedure is the same as 2) of the 17th embodiment, 3) The procedure is the same as 3) of the 17th embodiment, 4) The procedure is the same as 4) of the 17th embodiment, 5) The same procedure as 5) of the 17th embodiment, 6) The same procedure as 6) of the 17th embodiment, 7) The same procedure as 7) of the 19th embodiment, 8) The same procedure as 8) of the 19th embodiment, 9) The same procedure as 9) of the 19th embodiment, 10) The same procedure as 10) of the 19th embodiment, 11) The same procedure as 7) of the 17th embodiment, 12) The same procedure as 8) of the 17th embodiment, 13) The same procedure as 9) of the 17th embodiment, 14) The procedure is the same as 10) of the seventeenth embodiment. In addition, the effects of nanoimprint, resin mold, and two-layer resist are also the same as in the sixteenth embodiment.

(21st embodiment) Regarding the manufacturing method of the deep ultraviolet LED, as shown in FIG. 6A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Rh) 16, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, the n-type AlGaN layer 4, the AlN buffer layer 3, and The step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a sapphire hemispherical lens 20a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the twentieth embodiment is that there is no metal layer (Ni) 9 in this structure, and the reflective electrode layer (Au) 10 is replaced with a reflective electrode layer (Rh) 16. Therefore, since the reflective electrode (Au) and the metal layer (Ni) 9 of the steps 1) to 14) described in the twentieth embodiment can be described by replacing the reflective electrode (Rh) 16, the details are omitted. Happening.

(22nd embodiment) Regarding the manufacturing method of the deep ultraviolet LED, as shown in FIG. 7A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side contains a reflective electrode layer (Au) 10, a metal layer (Ni) 9, a p-type GaN contact layer 8, a p-type AlGaN layer 7, a multiple quantum barrier layer (or electron barrier layer) 6, a multiple quantum well layer 5 , Steps of the laminated structure of n-type AlGaN layer 4, AlN buffer layer 3, and sapphire substrate 2. Furthermore, there is a step of bonding a sapphire hemispherical lens 20a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the steps of making the above-mentioned laminated structure and LED element and coating the surface mount ceramic package 15 with the NR-RC reflector 17 are the same as the steps described in 1) to 8) of the 16th embodiment . After the coating step of step 8) is completed, as described below, there is a step of bonding the sapphire hemispherical lens 20a and coating the surface of the sapphire hemispherical lens 20a with a transparent resin film 21a. have: 1) The same procedure as 1) of the 16th embodiment, 2) The same procedure as 2) of the 16th embodiment, 3) The same procedure as 3) of the 16th embodiment, 4) The same procedure as 4) of the 16th embodiment, 5) Same procedure as 5) of the 16th embodiment, 6) The same procedure as 6) of the 16th embodiment, 7) The same procedure as 7) of the 16th embodiment, 8) The same procedure as 8) of the 16th embodiment, 9) The step of preparing a sapphire hemispherical lens 20a with a radius greater than the outer circle of the inner wall of the package, 10) A step of flattening the back surface of the above-mentioned LED element substrate and the back surface of the sapphire hemispherical lens 20a, 11) The step of activating the back surface of the sapphire hemispherical lens 20a and the back surface of the LED element substrate by using ion beam or atmospheric piezoelectric slurry, 12) The step of bonding the back surface of the sapphire hemispherical lens 20a subjected to the surface activation treatment to the back surface of the LED element substrate, 13) The step of mounting the sapphire hemispherical lens 20a on the above-mentioned package 15 to join the LED element, 14) A step of simultaneously covering the surface of the sealed sapphire hemispherical lens 20a and the upper surface of the package with a resin film 21a that is transparent to the wavelength λ. The effects of nanoimprint, resin mold, and two-layer resist are the same as those of the 16th embodiment.

(23rd Embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 8A, a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Au) 10, the metal layer (Ni) 9, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, and the n-type AlGaN layer 4 , AlN buffer layer 3, and the step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a sapphire hemispherical lens 20a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the steps of making the above-mentioned laminated structure and LED elements and coating the surface mount ceramic package 15 with the NR-RC reflector 17 are the same as the steps described in 1) to 8) of the 17th embodiment . After the coating step of step 8) is completed, the step of bonding the sapphire hemispherical lens 20a and coating the surface of the sapphire hemispherical lens 20a with the transparent resin film 21a is the same as the steps described in 9) to 14) of the 22nd embodiment. Therefore, the details are omitted.

(24th embodiment) Regarding the manufacturing method of the deep ultraviolet LED, as shown in FIG. 9A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm ~ 355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Rh) 16, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, the n-type AlGaN layer 4, the AlN buffer layer 3, and The step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a sapphire hemispherical lens 20a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the 23rd embodiment is that there is no metal layer (Ni) 9 in this structure, and the reflective electrode layer (Au) 10 is replaced with a reflective electrode layer (Rh) 16. Therefore, since the reflective electrode (Au) and the metal layer (Ni) 9 of the steps described in the 23rd embodiment can be described by replacing the reflective electrode (Rh) 16, the details are omitted.

(25th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 10A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side contains a reflective electrode layer (Au) 10, a metal layer (Ni) 9, a p-type GaN contact layer 8, a p-type AlGaN layer 7, a multiple quantum barrier layer (or electron barrier layer) 6, a multiple quantum well layer 5 , Steps of the laminated structure of n-type AlGaN layer 4, AlN buffer layer 3, and sapphire substrate 2. Furthermore, there is a step of bonding a quartz hemispherical lens 22a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the nineteenth embodiment is that the sapphire hemispherical lens 20a is replaced with a quartz hemispherical lens 22a in this structure. Therefore, the description can be made by replacing the sapphire hemispherical lens 20a of the procedure described in the nineteenth embodiment with the quartz hemispherical lens 22a, and therefore the details are omitted.

(26th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 11A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Au) 10, the metal layer (Ni) 9, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, and the n-type AlGaN layer 4 , AlN buffer layer 3, and the step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a quartz hemispherical lens 22a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the twentieth embodiment is that the sapphire hemispherical lens 20a is replaced with a quartz hemispherical lens 22a in this structure. Therefore, the description can be made by replacing the sapphire hemispherical lens 20a of the procedure described in the twentieth embodiment with the quartz hemispherical lens 22a, and therefore the details are omitted.

(27th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 12A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Rh) 16, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, the n-type AlGaN layer 4, the AlN buffer layer 3, and The step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a quartz hemispherical lens 22a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the twenty-first embodiment is that the sapphire hemispherical lens 20a is replaced with a quartz hemispherical lens 22a in this structure. Therefore, the description can be made by replacing the sapphire hemispherical lens 20a of the procedure described in the twenty-first embodiment with the quartz hemispherical lens 22a, so the details are omitted.

(28th embodiment) Regarding the manufacturing method of the deep ultraviolet LED, as shown in FIG. 13A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side contains a reflective electrode layer (Au) 10, a metal layer (Ni) 9, a p-type GaN contact layer 8, a p-type AlGaN layer 7, a multiple quantum barrier layer (or electron barrier layer) 6, a multiple quantum well layer 5 , Steps of the laminated structure of n-type AlGaN layer 4, AlN buffer layer 3, and sapphire substrate 2. Furthermore, there is a step of bonding a quartz hemispherical lens 22a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the 22nd embodiment is that the sapphire hemispherical lens 20a is replaced with a quartz hemispherical lens 22a in this structure. Therefore, the description can be made by replacing the sapphire hemispherical lens 20a of the steps described in the 22nd embodiment with the quartz hemispherical lens 22a, so the details are omitted.

(29th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 14A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Au) 10, the metal layer (Ni) 9, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, and the n-type AlGaN layer 4 , AlN buffer layer 3, and the step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a quartz hemispherical lens 22a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the 23rd embodiment is that the sapphire hemispherical lens 20a is replaced with a quartz hemispherical lens 22a in this structure. Therefore, the description can be made by replacing the sapphire hemispherical lens 20a of the procedure described in the twenty-third embodiment with the quartz hemispherical lens 22a, so the details are omitted.

(30th embodiment) Regarding the manufacturing method of the deep-ultraviolet LED, as shown in FIG. 14A, it is a step of forming a laminated structure with a design wavelength of λ (200 nm~355 nm) and a sapphire substrate 2 as a growth substrate, and is formed from a sapphire substrate 2 The opposite side sequentially contains the reflective electrode layer (Rh) 16, the p-type AlGaN contact layer 8a, the multiple quantum barrier layer (or electron barrier layer) 6, the multiple quantum well layer 5, the n-type AlGaN layer 4, the AlN buffer layer 3, and The step of the laminated structure of the sapphire substrate 2. Furthermore, there is a step of bonding a quartz hemispherical lens 22a having a radius greater than the circumscribed circle of the LED element substrate on the back surface of the sapphire substrate 2.

In this step, the only difference from the twenty-fourth embodiment is that the sapphire hemispherical lens 20a is replaced with a quartz hemispherical lens 22a in this structure. Therefore, the description can be made by replacing the sapphire hemispherical lens 20a in the procedure described in the twenty-fourth embodiment with the quartz hemispherical lens 22a, and therefore the details are omitted.

(31st embodiment) In the thirty-first embodiment, as a variation of (the first embodiment) and (the tenth embodiment), a mode in which Au is vapor-deposited on the inner wall of an aluminum nitride ceramic package is shown.

The purpose of this embodiment is to realize a low-cost, high LEE deep ultraviolet LED device. Therefore, the reflectance is lower than that of the inorganic coating NC-RC, but the effect of the Au coating film, which is used relatively cheaply, is also verified by simulation.

The structure of the deep ultraviolet LED device of this embodiment is changed from the inorganic paint coating film 17 to the Au coating film 18 in the structures of the (first embodiment) and (tenth embodiment). For reference, a structure as a modification of (the tenth embodiment) is shown in FIG. 17. The modified example of the (first embodiment) has a structure in which the quartz hemispherical lens 22a is excluded from FIG. 17, so the drawing is omitted.

The parameters of the Au coating film 18 are the film thickness of 200 nm, the refractive index of 1.678, the extinction coefficient of 1.873, the relative permeability of 1.0, and the instantaneous relative permittivity of 1.0.

In addition, the reflective two-dimensional photonic crystal 100 is based on the distance G between the wells of the multiple well layer 5 and the shortest end face of the reflective two-dimensional photonic crystal 100 as 61 nm, the order m=3, and R/a is R/a =0.30, 0.35, 0.40 3 conditions confirmed. Furthermore, the reflective two-dimensional photonic crystal 100 is arranged in such a way that it does not exceed the interface between the p-type GaN contact layer 8 and the p-type AlGaN layer 7 and is embedded in the p-type GaN contact layer 8. It is considered that, after the reflective two-dimensional photonic crystal is formed, before the electrodes (Ni electrode 9 and Au reflective electrode 10) are formed, GaN is grown in the lateral direction, and the voids 101 of the two-dimensional photonic crystal (h) It remains in the p-type GaN contact layer 8, and by covering the upper part of the hole 101(h), the interface between the p-type GaN contact layer 8 and the Ni electrode 9 is flattened, and the electrode formation process is easy.

The results are shown in Table 71 and Table 72.

Table 71 is the LEE calculation result of the ray tracing method using the structure of the unbonded quartz hemispherical lens shown in (the first embodiment). Table 4, multiply the result of Table 4 by the LEE of the FDTD of the structure with the Au coating The result calculated by the growth factor.

In addition, Table 72 is the LEE calculation result table 43 of the ray tracing method using the structure shown in the (10th embodiment) with the quartz hemispherical lens attached, and the result of Table 43 is multiplied by the FDTD of the structure provided with the Au coating. Calculated result of the LEE growth coefficient.

[Table 71] Table 71 LEE growth factor/side wall angle 60° 75° 90° R/a=0.30 1.83 1.86 1.99 R/a=0.35 2.23 2.28 2.45 R/a=0.40 2.66 2.69 2.9 LEE(%) R/a=0.30 7.3% 7.1% 7.2% R/a=0.35 8.9% 8.7% 8.8% R/a=0.40 10.6% 10.2% 10.4%

[Table 72] Table 72 LEE growth factor/side wall angle 60° 75° 90° R/a=0.30 2.03 2.02 2.09 R/a=0.35 2.49 2.48 2.56 R/a=0.40 2.9 2.86 2.96 LEE(%) R/a=0.30 14.6% 12.7% 10.2% R/a=0.35 17.9% 15.6% 12.5% R/a=0.40 20.9% 18.0% 14.5%

The above results are compared with the results of (First Embodiment) and (Tenth Embodiment).

First, in Table 4 of (First Embodiment), the LEE of the Au reflective film is 4.0% when the angle of the sidewall of the package is 60 degrees, and the two-dimensional photonic crystal of 60 degrees in the above Table 71 is R/ When a=0.40, LEE is 10.6%, which is increased by 2.66 times after the formation of the two-dimensional photonic crystal. In addition, in comparison with the inorganic coating film, in Table 6, relative to LEE 8.9% when R/a = 0.3, in the above-mentioned Table 71, it is LEE 7.3%, and similarly relative to [Table 6] R/a=0.4 is LEE 12.1% and in Table 71 it is LEE 10.6%. Although it is not as good as the inorganic coating film, it is relatively close to the inorganic coating film.

In addition, in Table 43 of (Tenth Embodiment), the LEE of the Au reflective film is 7.2% when the angle of the side wall of the package is 60 degrees, and the side wall angle of 60 degrees in Table 72 is, for example, R/a=0.40 20.9%, increased by 2.9 times after the formation of two-dimensional photonic crystals. In addition, in comparison with the inorganic coating film, in Table 44, it is 19% of LEE with R/a=0.3, and LEE is 14.6% in Table 72, which is similar to R/a of Table 44 = 0.4 is LEE 25.4%, and in Table 72 it is LEE 20.9%. Although it is still not as good as the inorganic coating film, the LEE close to the inorganic coating film is obtained.

These results show that in the present invention, in addition to the inorganic paint coating film for the aluminum nitride ceramic package inner wall material, the structure using Au vapor deposition is also effective as an option.

In the above-mentioned embodiment, the structure of the figure etc. are not limited to these, and can be changed suitably within the range which exhibits the effect of this invention. Moreover, as long as it does not deviate from the range of the objective of this invention, it can change suitably and implement. In addition, the various constituent elements of the present invention can be arbitrarily selected and selected, and inventions having the configuration of the selection options are also included in the present invention. [Industrial availability]

The present invention can be used in deep ultraviolet LEDs.

1: Quartz window 2: Sapphire substrate 3: AlN buffer layer 4: n-type AlGaN layer 5: Multiple quantum well layer 6: Multiple quantum barrier layer (or electron barrier layer) 7: p-type AlGaN layer 8: p-type GaN contact layer 8a: p-type AlGaN contact layer 9: Metal layer (Ni, Ni layer) 10: Reflective electrode layer (Au, Au reflective electrode layer) 15: Surface mount aluminum nitride ceramic package, AlN package 15a: AlN package inner side wall angle θ 16: Rh reflective electrode layer 17: Inorganic coating film (NC-RC reflective material) 18: Au coating 20a: Sapphire hemispherical lens 21a: Transparent resin film 22a: Quartz hemispherical lens 100: Reflective two-dimensional photonic crystal 101(h): Hole (columnar structure, hole) All publications, patents and patent applications cited in this specification are directly incorporated into this specification by reference.

1A is a cross-sectional view and a top view of the deep ultraviolet LED device according to the first embodiment of the present invention. Fig. 1B is a diagram showing the relationship between the R/a and the PBG value of the photon band structure incident on the TE polarization component of the two-dimensional photonic crystal formed on the p-type GaN contact layer using the plane wave expansion method. Fig. 1C is a calculation model in the ray tracing method of the deep ultraviolet LED device of the first embodiment. Fig. 1D is the calculation model in the FDTD (Finite-Difference Time-Domain) method of the deep ultraviolet LED device of the first embodiment. Figure 1E shows the use of the inorganic coating NC-RC manufactured by Tungsten Co., Ltd. of Japan as an inorganic coating that satisfies the characteristics of the above-mentioned inorganic coating and is applied to the AlN package (hereinafter referred to as "NC-RC reflector"). A graph showing the wavelength characteristics of reflectance in the case of an aluminum coating film. Fig. 1F is the LEE analysis result in the case of the NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the first embodiment. Fig. 1G is an analysis result of the LEE growth coefficient using the distance G from the well of the multiple quantum well layer of the first embodiment to the shortest end face of the 2D-PhC as a variable. Figure 1H is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the first embodiment. 2A is a cross-sectional view and a top view of the deep ultraviolet LED device of the second embodiment. FIG. 2B is a diagram showing the relationship between the R/a and the PBG value of the photon band structure incident on the TE polarization component of the two-dimensional photonic crystal formed on the p-type AlGaN contact layer using the plane wave expansion method. 2C is the LEE analysis result in the case of the NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the second embodiment. Fig. 2D is an analysis result of the LEE growth coefficient using the distance G from the well of the multiple quantum well layer of the second embodiment to the shortest end face of the 2D-PhC as a variable. Figure 2E is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the second embodiment. 3A is a cross-sectional view and a top view of the deep ultraviolet LED device of the third embodiment. Fig. 3B is the LEE analysis result in the case of the NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the third embodiment. Fig. 3C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the third embodiment. 4A is a cross-sectional view and a top view of the deep ultraviolet LED device of the fourth embodiment. 4B is a calculation model in the ray tracing method of the deep ultraviolet LED device of the fourth embodiment. Fig. 4C is a calculation model in the FDTD method of the deep ultraviolet LED device of the fourth embodiment. Fig. 4D is the LEE analysis result in the case of the NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the fourth embodiment. Figure 4E is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the fourth embodiment. 5A is a cross-sectional view and a top view of the deep ultraviolet LED device of the fifth embodiment. Fig. 5B is the LEE analysis result in the case of the NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the fifth embodiment. Fig. 5C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the fifth embodiment. 6A is a cross-sectional view and a top view of the deep ultraviolet LED device of the sixth embodiment. Fig. 6B is the result of LEE analysis in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the sixth embodiment. Fig. 6C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the sixth embodiment. 7A is a cross-sectional view and a top view of the deep ultraviolet LED device of the seventh embodiment. Fig. 7B is a calculation model of the ray tracing method of the deep ultraviolet LED device of the seventh embodiment. Fig. 7C is a calculation model of the FDTD method of the deep ultraviolet LED device of the seventh embodiment. Fig. 7D is the result of LEE analysis in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the seventh embodiment. Fig. 7E is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the seventh embodiment. 8A is a cross-sectional view and a top view of the deep ultraviolet LED device of the eighth embodiment. Fig. 8B is the LEE analysis result in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the eighth embodiment. Fig. 8C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the eighth embodiment. 9A is a cross-sectional view and a top view of the deep ultraviolet LED device of the ninth embodiment. Fig. 9B is the result of LEE analysis in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the ninth embodiment. Fig. 9C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the ninth embodiment. 10A is a cross-sectional view and a top view of the deep ultraviolet LED device of the tenth embodiment. Fig. 10B is the result of LEE analysis in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the tenth embodiment. Fig. 10C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the tenth embodiment. 11A is a cross-sectional view and a top view of the deep ultraviolet LED device of the eleventh embodiment. Fig. 11B is the result of LEE analysis in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the 11th embodiment. Fig. 11C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the 11th embodiment. 12A is a cross-sectional view and a top view of the deep ultraviolet LED device of the twelfth embodiment. Fig. 12B is the LEE analysis result in the case of the NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the 12th embodiment. Fig. 12C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the twelfth embodiment. 13A is a cross-sectional view and a top view of the deep ultraviolet LED device of the 13th embodiment. Fig. 13B is the result of LEE analysis in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the 13th embodiment. Fig. 13C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the 13th embodiment. 14A is a cross-sectional view and a top view of the deep ultraviolet LED device of the fourteenth embodiment. Fig. 14B is the LEE analysis result in the case of the NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the fourteenth embodiment. Fig. 14C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the 14th embodiment. 15A is a cross-sectional view and a top view of the deep ultraviolet LED device of the fifteenth embodiment. Fig. 15B is the result of LEE analysis in the case of NC-RC reflector, Al reflector, Au reflector, and non-reflective film as the inorganic paint coating film of the fifteenth embodiment. Fig. 15C is the analysis result of the LEE growth coefficient of the 2D-PhC calculation model of the 15th embodiment. FIG. 16A is a diagram showing the relationship between the thickness of the sapphire substrate and the LEE of the PhC-free LED by analyzing the thickness of the sapphire substrate as a comparative example by changing the thickness of the sapphire substrate to 130 um, 280 um, and 430 um using the ray tracing method. FIG. 16B is the analysis result of LEE when the sapphire lens with quartz window and the quartz lens shown as a comparative example are used. Fig. 16C is an analysis result of light extraction efficiency when using a sapphire lens with a transparent resin film and a quartz lens shown as a comparative example. 17 is a cross-sectional view and a plan view of the deep ultraviolet LED device of the 31st embodiment.

1: Quartz window

2: Sapphire substrate

3: AlN buffer layer

4: n-type AlGaN layer

5: Multiple quantum well layer

6: Multiple quantum barrier layer (or electron barrier layer)

7: p-type AlGaN layer

8: p-type GaN contact layer

9: Metal layer (Ni, Ni layer)

10: Reflective electrode layer (Au, Au reflective electrode layer)

15: Surface mount aluminum nitride ceramic package, AlN package

15a: AlN package inner side wall angle θ

17: Inorganic coating film (NC-RC reflective material)

100: Reflective two-dimensional photonic crystal

101(h): Hole (columnar structure, hole)

Claims (6)

A deep-ultraviolet LED device, characterized by: a package, which is covered on the inner bottom surface and inner side wall with an inorganic coating with a reflectance of 91% or more for the design wavelength λ (200 nm~355 nm) of the deep ultraviolet LED element Film surface mount aluminum nitride ceramic package, and the inside sidewall angle of the package is 45 degrees or more and 60 degrees or less, and the outermost surface of the package is sealed by a quartz window; and deep ultraviolet LED components are installed in the package Reflective electrode layer (Au), metal layer (Ni), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (or electron barrier layer), multiple quantum well layer in order from the side opposite to the sapphire substrate , N-type AlGaN layer, AlN buffer layer, and the above-mentioned sapphire substrate, and the deep ultraviolet LED element has a reflective two-dimensional photonic crystal, the reflective two-dimensional photonic crystal has a contact layer between the metal layer and the p-type GaN A plurality of holes within the thickness direction and not exceeding the position of the interface between the p-type GaN contact layer and the p-type AlGaN layer, the reflective two-dimensional photonic crystal periodic structure has a photon band opened with respect to the TE polarization component Relative to the light of the design wavelength λ, the period a of the reflective two-dimensional photonic crystal periodic structure satisfies the Bragg condition and is in the Bragg condition mλ/n _eff = 2a (where m: order, λ: design Wavelength, n _eff : the effective refractive index of the two-dimensional photonic crystal, a: the period of the two-dimensional photonic crystal) m satisfies 3≦m≦4, when the radius of the above-mentioned hole is set to R, the R/a ratio satisfies 0.30≦R/a≦0.40. According to claim 1, the deep ultraviolet LED device further has a sapphire or quartz hemispherical lens that is transparent to the wavelength λ bonded to the back of the sapphire substrate, and the radius of the hemispherical lens is greater than the radius of the circle outside the sapphire substrate. A method for manufacturing a deep ultraviolet LED device, which is a method for manufacturing a deep ultraviolet LED device with a design wavelength of λ (200 nm ~ 355 nm), in the step of forming a layered structure with a sapphire substrate as a growth substrate, and forming Contains a reflective electrode layer (Au), a metal layer (Ni), a p-type GaN contact layer, a p-type AlGaN layer, a multiple quantum barrier layer (or electron barrier layer), a multiple quantum well layer, n In the step of the laminated structure of the type AlGaN layer, the AlN buffer layer, and the sapphire substrate, there are the following steps: A reflective two-dimensional photonic crystal periodic structure is formed. The reflective two-dimensional photonic crystal periodic structure has a range in the thickness direction of the metal layer and the p-type GaN contact layer, and does not exceed the thickness of the p-type GaN contact layer and the p-type GaN contact layer. Multiple holes at the interface of the p-type AlGaN layer; Prepare a mold for forming the above-mentioned reflective two-dimensional photonic crystal periodic structure; A resist layer is formed on the p-type GaN contact layer, and the structure of the mold is transferred using the nanoimprint method; Etching the p-type GaN contact layer with the resist layer transferred with the above structure as a mask to form a two-dimensional photonic crystal periodic structure; Forming the above-mentioned reflective two-dimensional photonic crystal, and then sequentially forming the above-mentioned metal layer and the reflective electrode layer by an oblique evaporation method; Cutting the sapphire substrate to make a deep ultraviolet LED element; Prepare the surface mount aluminum nitride ceramic package with the inner side wall angle of 45 degrees to 60 degrees; Covering the inner bottom surface and inner side wall of the package with the above-mentioned inorganic coating film; Installing the deep ultraviolet LED element in the package; and sealing the outermost surface of the package with a quartz window. For example, the manufacturing method of a deep ultraviolet LED device of claim 3, which further has the following steps: Prepare a sapphire or quartz hemispherical lens with a radius above the circumscribed circle of the LED element substrate; Flattening the back surface of the LED element substrate and the back surface of the hemispherical lens; Use ion beam or atmospheric pressure to activate the back surface of the hemispherical lens and the back surface of the LED element substrate; Joining the back surface of the hemispherical lens subjected to the surface activation treatment with the back surface of the LED element substrate; Prepare the surface mount aluminum nitride ceramic package with the inner side wall angle of 45 degrees to 60 degrees; Covering the inner bottom surface and inner side wall of the package with the above-mentioned inorganic coating film; Installing the hemispherical lens-bonded LED element on the package; and The outermost surface of the package is sealed with a quartz window. A deep-ultraviolet LED device, characterized by: a package, which is set at the design wavelength λ (200 nm~355 nm) of the deep-ultraviolet LED element, and an Au coating film is covered on the inner bottom surface and the inner side wall of the surface mount type Aluminum nitride ceramic package, and the angle of the inner side wall of the package is 60 degrees or more and 90 degrees or less, and the outermost surface of the package is sealed by a quartz window; and the deep ultraviolet LED element is installed in the package and is free The opposite side of the sapphire substrate sequentially has a reflective electrode layer (Au), a metal layer (Ni), a p-type GaN contact layer, a p-type AlGaN layer, a multiple quantum barrier layer (or electron barrier layer), a multiple quantum well layer, and an n-type AlGaN layer , AlN buffer layer, and the sapphire substrate, and the deep ultraviolet LED element has a reflective two-dimensional photonic crystal, the reflective two-dimensional photonic crystal has a thickness set in the range of the metal layer and the p-type GaN contact layer , And no more than a plurality of pores at the position of the interface between the p-type GaN contact layer and the p-type AlGaN layer, the reflective two-dimensional photonic crystal periodic structure has a photonic band gap open to the TE polarization component, relative to the above For light of design wavelength λ, the period a of the above-mentioned reflective two-dimensional photonic crystal periodic structure satisfies the Bragg condition and is in the Bragg condition mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : The effective refractive index of the two-dimensional photonic crystal, a: the period of the two-dimensional photonic crystal) m satisfies m=3, when the radius of the above-mentioned hole is set to R, the R/a ratio satisfies 0.30≦R/a≦0.40 . According to claim 5, the deep ultraviolet LED device further has a quartz hemispherical lens transparent to the wavelength λ bonded to the back of the sapphire substrate, and the radius of the hemispherical lens is greater than the radius of the outer circle of the sapphire substrate.

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