TW202024787A - Photosensitive resin composition, cured product, layered product, production method for cured product, and semiconductor device - Google Patents

Photosensitive resin composition, cured product, layered product, production method for cured product, and semiconductor device Download PDF

Info

Publication number
TW202024787A
TW202024787A TW108129001A TW108129001A TW202024787A TW 202024787 A TW202024787 A TW 202024787A TW 108129001 A TW108129001 A TW 108129001A TW 108129001 A TW108129001 A TW 108129001A TW 202024787 A TW202024787 A TW 202024787A
Authority
TW
Taiwan
Prior art keywords
group
resin composition
photosensitive resin
ring
preferable
Prior art date
Application number
TW108129001A
Other languages
Chinese (zh)
Other versions
TWI805825B (en
Inventor
山口修平
吉田健太
福原敏明
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202024787A publication Critical patent/TW202024787A/en
Application granted granted Critical
Publication of TWI805825B publication Critical patent/TWI805825B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003Preparatory processes
    • C08G73/1007Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1025Preparatory processes from tetracarboxylic acids or derivatives and diamines polymerised by radiations
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22Polybenzoxazoles
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

Abstract

Provided are: a photosensitive resin composition capable of providing a film having excellent storage stability and excellent elongation at break; and a cured product, layered product, and cured product production method using the photosensitive resin composition; and a semiconductor device. This photosensitive resin composition contains a thermal base generator and a polyimide precursor. The thermal base generator generates a base at 200 DEG C or lower and has a polymerizable group at a site where a base is to be generated.

Description

感光性樹脂組成物、硬化膜、積層體、硬化膜之製造方法、半導體器件Photosensitive resin composition, cured film, laminate, cured film manufacturing method, semiconductor device

本發明係有關一種感光性樹脂組成物、硬化膜、積層體、硬化膜之製造方法、半導體器件。The present invention relates to a photosensitive resin composition, a cured film, a laminate, a method of manufacturing a cured film, and a semiconductor device.

聚醯亞胺樹脂、聚苯并㗁唑樹脂等環化並硬化之樹脂的耐熱性及絕緣性優異,因此應用於各種用途(例如,參閱非專利文獻1、2)。該用途並無特別限定,但若以實際安裝用半導體器件為例,則可舉出作為絕緣膜或密封材料的原材料或絕緣膜的保護膜的利用。又,亦用作撓性基板的基膜或蓋層等。 聚醯亞胺樹脂等通常對溶劑的溶解性低。因此,經常使用在環化反應前的前驅物的狀態下溶解於溶劑之方法。藉此,能夠實現優異的操作性,且在製造如上述那樣的各產品時能夠以各種形態塗佈於基板等並加工。之後,設為環化聚醯亞胺等前驅物而成之結構,能夠形成已硬化之產品。除了聚醯亞胺樹脂所具有之高性能以外,從該等製造上的適應性優異之觀點考慮,越來越期待其產業上的應用發展。Cyclized and hardened resins such as polyimide resins and polybenzoxazole resins are excellent in heat resistance and insulating properties, and therefore are used in various applications (for example, refer to Non-Patent Documents 1 and 2). The use is not particularly limited, but if a semiconductor device for actual mounting is taken as an example, the use as a raw material of an insulating film or a sealing material or a protective film of an insulating film can be cited. In addition, it is also used as a base film or cap layer for flexible substrates. Polyimide resins and the like generally have low solubility in solvents. Therefore, a method of dissolving in a solvent in the state of the precursor before the cyclization reaction is often used. With this, it is possible to achieve excellent operability, and to be applied to a substrate or the like in various forms and processed when manufacturing each product as described above. After that, it is set to a structure formed by cyclizing polyimide and other precursors, and it can form a hardened product. In addition to the high performance possessed by polyimide resins, from the viewpoint of excellent manufacturing adaptability, more and more industrial applications are expected.

嘗試如上述將聚醯亞胺作為層間絕緣膜的保護膜而應用。 專利文獻1中揭示有含有聚醯亞胺前驅物及2,4,6-三甲基吡啶鎓對甲苯磺酸鹽之樹脂組成物。專利文獻2中揭示有含有聚醯亞胺前驅物、藉由光化射線照射而產生自由基之化合物、具有環氧乙烷基之特定化合物及溶劑之樹脂組成物。專利文獻3中揭示有含有具有特定結構之N-芳香族甘氨酸衍生物及高分子前驅物之感光性樹脂組成物。 [先前技術文獻] [專利文獻]Try to apply polyimide as a protective film for the interlayer insulating film as described above. Patent Document 1 discloses a resin composition containing a polyimide precursor and 2,4,6-trimethylpyridinium p-toluenesulfonate. Patent Document 2 discloses a resin composition containing a polyimide precursor, a compound that generates radicals by irradiation with actinic rays, a specific compound having an oxirane group, and a solvent. Patent Document 3 discloses a photosensitive resin composition containing an N-aromatic glycine derivative having a specific structure and a polymer precursor. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2015-108053號公報 [專利文獻2]日本特開2014-201695號公報 [專利文獻3]日本特開2006-282880號公報 [非專利文獻][Patent Document 1] Japanese Patent Application Publication No. 2015-108053 [Patent Document 2] JP 2014-201695 A [Patent Document 3] JP 2006-282880 A [Non-Patent Literature]

[非專利文獻1]Science & technology Co.,Ltd.“聚醯亞胺的高功能化和應用技術”2008年4月 [非專利文獻2]柿本雅明/監修、CMC技術圖書館“聚醯亞胺材料的基礎和開發”2011年11月發行[Non-Patent Document 1] Science & technology Co., Ltd. "High-functionalization and application technology of polyimide" April 2008 [Non-Patent Document 2] Kakimoto Masaki/Supervisor, CMC Technical Library "Basic and Development of Polyimide Materials" issued in November 2011

如上述專利文獻等中所述,聚醯亞胺前驅物或聚苯并㗁唑前驅物(以下,有時亦將該等統稱為“聚合物前驅物”)如上述那樣進行環化(閉環),藉此能夠硬化樹脂組成物。聚合物前驅物藉由加熱而環化,但是若此時存在鹼,則聚合物前驅物成為觸媒而促進環化並迅速硬化。因此,考慮含有在加熱時產生鹼之熱鹼產生劑而促進聚合物前驅物的環化反應。關於該種熱鹼產生劑,亦要求在加熱前不釋放鹼從而避免因進行無意的環化而引起之硬化,並實現保存時的穩定性。 又,習知之熱鹼產生劑中,因其而產生之作為鹼之分子較小而具有揮發性。因此,在加熱到預定溫度之環境下,有時導致鹼從體系內揮發。若鹼從組成物中揮發,則無法期望藉由使用鹼而環化聚合物前驅物的效果,導致所得到之膜的斷裂伸長率變差之結果。As described in the above-mentioned patent documents, etc., the polyimide precursor or polybenzoxazole precursor (hereinafter, sometimes collectively referred to as "polymer precursor") is cyclized (ring closed) as described above Thereby, the resin composition can be cured. The polymer precursor is cyclized by heating, but if an alkali is present at this time, the polymer precursor becomes a catalyst to promote cyclization and quickly harden. Therefore, it is considered to include a thermal base generator that generates an alkali during heating to promote the cyclization reaction of the polymer precursor. Regarding this kind of hot alkali generator, it is also required that no alkali is released before heating so as to avoid hardening due to unintentional cyclization and to achieve stability during storage. In addition, among the conventional hot alkali generators, the molecules generated as alkalis are relatively small and volatile. Therefore, in an environment heated to a predetermined temperature, the alkali sometimes volatilizes from the system. If the base volatilizes from the composition, the effect of using the base to cyclize the polymer precursor cannot be expected, resulting in the deterioration of the elongation at break of the resulting film.

鑑於該等感光性樹脂組成物中的技術上的課題,本發明的目的在於提供一種針對含有聚合物前驅物之感光性樹脂組成物能夠實現基於充分的加熱之硬化性之感光性樹脂組成物及使用了該感光性樹脂組成物之硬化膜、積層體、硬化膜之製造方法以及半導體器件。尤其,其目的在於提供一種保存穩定性亦優異且作為硬化膜時的斷裂伸長率亦優異之感光性樹脂組成物及使用了該感光性樹脂組成物之硬化膜、積層體、硬化膜之製造方法以及半導體器件。In view of the technical problems in these photosensitive resin compositions, the object of the present invention is to provide a photosensitive resin composition capable of achieving sufficient curing properties by heating for photosensitive resin compositions containing polymer precursors and A cured film, a laminate, a cured film manufacturing method and a semiconductor device using the photosensitive resin composition. In particular, its object is to provide a photosensitive resin composition that is excellent in storage stability and also excellent in elongation at break when used as a cured film, and a cured film, laminate, and cured film using the photosensitive resin composition And semiconductor devices.

本發明人等進行了研究之結果,研究了對所產生之鹼賦予聚合性基。亦即,將聚合性基導入到熱鹼產生劑,製成已分解之鹼具有聚合性基之結構。所產生之鹼經由聚合性基與其他分子聚合,藉此鹼在維持其活性之狀態下並且比以往高分子的狀態下,存在於體系中。藉此,發現了能夠抑制鹼的揮發,並能夠有效地促進加熱硬化時的聚合物前驅物的環化。具體而言,藉由下述方法解決了上述課題。As a result of research conducted by the present inventors, they studied to impart a polymerizable group to the generated base. That is, the polymerizable group is introduced into the thermal base generator to form a structure in which the decomposed base has the polymerizable group. The generated base is polymerized with other molecules via the polymerizable group, whereby the base exists in the system while maintaining its activity and in a state that is higher than that of a conventional polymer. Thereby, it was found that the volatilization of the alkali can be suppressed, and the cyclization of the polymer precursor during heat curing can be effectively promoted. Specifically, the above-mentioned problem was solved by the following method.

<1>一種感光性樹脂組成物,其包含熱鹼產生劑、選自聚醯亞胺前驅物及聚苯并㗁唑前驅物之聚合物前驅物、光聚合起始劑及聚合性化合物,其中,熱鹼產生劑在200℃以下產生鹼,並且在成為所產生之鹽之部位具有聚合性基。 <2>如<1>所述之感光性樹脂組成物,其中, 上述熱鹼產生劑具有由下述式(N1)~(N3)中的任一個表示之結構; [化學式1]

Figure 02_image001
式(N1)中,X為單鍵或2價的連結基,R1 分別獨立地表示氫原子或有機基團,n1及n2為1或2,n1+n2為3,n3為0或1,n3為1時,X不是單鍵,n1為2時,2個[ ]內的基團可以彼此相同亦可以不同,n2為2時,2個R1 可以彼此相同亦可以不同,2個R1 可以彼此連結而形成環狀結構,R1 中的至少一個具有聚合性基; [化學式2]
Figure 02_image003
式(N2)中,R2 表示氫原子或有機基團,R3 表示有機基團,n4及n5為1或2,n4+n5為3,n4為2時,( )內的基團可以彼此相同亦可以不同,n5為2時,2個R2 可以彼此相同亦可以不同,2個R2 可以彼此連結而形成環狀結構,R2 中的至少一個具有聚合性基; [化學式3]
Figure 02_image005
式(N3)中,R4 表示n8價的有機基團,R5 及R6 分別獨立地表示氫原子或烴基,R7 ~R9 分別獨立地表示烴基,A表示m價的酸陰離子,m為1~4的整數,n7表示1~12的整數,n8及n9表示1~12的整數,且n8=n9,R5 與R6 可以連結而形成環狀結構,R7 ~R9 中的2個以上可以分別連結而形成環狀結構,R7 ~R9 中的至少一個具有聚合性基。 <3>如<1>或<2>所述之感光性樹脂組成物,其中, 上述成為所產生之鹼之部位所具有之聚合性基為環氧基、氧環丁烷基、乙烯性不飽和基或由下述式(Z)表示之基團; [化學式4]
Figure 02_image007
式(Z)中,Rc表示氧原子、氮原子或(n+2)價的芳香族基,Ra及Rb分別獨立地表示氫原子或有機基團,n表示0~6的整數,Rc為氧原子的情況下,n為0,Rc為氮原子的情況下,n為1,*表示鍵結鍵。 <4>如<1>~<3>中任一項所述之感光性樹脂組成物,其中, 上述聚合物前驅物包含聚醯亞胺前驅物。 <5>如<4>所述之感光性樹脂組成物,其中, 上述聚醯亞胺前驅物具有由下述式(1)表示之構成單元; [化學式5]
Figure 02_image009
式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價的有機基團,R115 表示4價的有機基團,R113 及R114 分別獨立地表示氫原子或1價的有機基團。 <6>如<5>所述之感光性樹脂組成物,其中, 上述式(1)中的R113 及R114 中的至少一個包含自由基聚合性基團。 <7>如<1>~<6>中任一項所述之感光性樹脂組成物,其用於再配線層用層間絕緣膜的形成。 <8>一種硬化膜,其使<1>~<7>中任一項所述之感光性樹脂組成物硬化而成。 <9>一種積層體,其具有2層以上且7層以下的<8>所述之硬化膜,且在該硬化膜之間具有金屬層。 <10>一種硬化膜的製造方法,其包括將<1>~<7>中任一項所述之感光性樹脂組成物應用於基板而形成膜之膜形成步驟。 <11>如<10>所述之硬化膜之製造方法,其包括在80~450℃下對上述膜進行加熱之加熱步驟。 <12>如<10>或<11>所述之硬化膜的製造方法,其具有對上述膜進行曝光之曝光步驟及對上述膜進行顯影之顯影步驟。 <13>一種半導體器件,其具有<8>所述之硬化膜或<9>所述之積層體。 [發明效果]<1> A photosensitive resin composition comprising a thermal base generator, a polymer precursor selected from polyimide precursors and polybenzoxazole precursors, a photopolymerization initiator, and a polymerizable compound, wherein , The thermal alkali generator generates a base at 200°C or less, and has a polymerizable group at the site of the generated salt. <2> The photosensitive resin composition according to <1>, wherein the thermal alkali generator has a structure represented by any one of the following formulas (N1) to (N3); [Chemical formula 1]
Figure 02_image001
In formula (N1), X is a single bond or a divalent linking group, R 1 each independently represents a hydrogen atom or an organic group, n1 and n2 are 1 or 2, n1+n2 is 3, n3 is 0 or 1, When n3 is 1, X is not a single bond, when n1 is 2, the groups in the two [] may be the same or different from each other, when n2 is 2, the two R 1 may be the same or different from each other, and 2 R 1 May be linked to each other to form a cyclic structure, and at least one of R 1 has a polymerizable group; [Chemical formula 2]
Figure 02_image003
In formula (N2), R 2 represents a hydrogen atom or an organic group, R 3 represents an organic group, n4 and n5 are 1 or 2, n4+n5 is 3, and n4 is 2, the groups in () can be mutually The same or different, when n5 is 2, the two R 2 may be the same or different from each other, the two R 2 may be connected to each other to form a cyclic structure, and at least one of R 2 has a polymerizable group; [Chemical formula 3]
Figure 02_image005
In formula (N3), R 4 represents an n8-valent organic group, R 5 and R 6 each independently represent a hydrogen atom or a hydrocarbon group, R 7 to R 9 each independently represent a hydrocarbon group, A represents an m-valent acid anion, m It is an integer from 1 to 4, n7 represents an integer from 1 to 12, n8 and n9 represent an integer from 1 to 12, and n8=n9, R 5 and R 6 may be connected to form a cyclic structure, R 7 to R 9 Two or more may be connected separately to form a cyclic structure, and at least one of R 7 to R 9 has a polymerizable group. <3> The photosensitive resin composition as described in <1> or <2>, wherein the polymerizable group contained in the site to be the base produced is an epoxy group, an oxetane group, and an ethylenic A saturated group or a group represented by the following formula (Z); [Chemical formula 4]
Figure 02_image007
In formula (Z), Rc represents an oxygen atom, nitrogen atom or (n+2) valence aromatic group, Ra and Rb each independently represent a hydrogen atom or an organic group, n represents an integer from 0 to 6, and Rc represents oxygen In the case of an atom, n is 0, and when Rc is a nitrogen atom, n is 1, and * represents a bonding bond. <4> The photosensitive resin composition according to any one of <1> to <3>, wherein the polymer precursor includes a polyimide precursor. <5> The photosensitive resin composition according to <4>, wherein the polyimide precursor has a structural unit represented by the following formula (1); [Chemical formula 5]
Figure 02_image009
In formula (1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent hydrogen Atom or monovalent organic group. <6> The photosensitive resin composition according to <5>, in which at least one of R 113 and R 114 in the above formula (1) contains a radical polymerizable group. <7> The photosensitive resin composition according to any one of <1> to <6>, which is used for formation of an interlayer insulating film for a rewiring layer. <8> A cured film obtained by curing the photosensitive resin composition described in any one of <1> to <7>. <9> A laminated body having two or more layers and seven or less layers of the cured film described in <8>, and having a metal layer between the cured films. <10> A method for producing a cured film, including a film forming step of applying the photosensitive resin composition according to any one of <1> to <7> to a substrate to form a film. <11> The method for producing a cured film as described in <10>, which includes a heating step of heating the film at 80 to 450°C. <12> The method for producing a cured film as described in <10> or <11>, which has an exposure step of exposing the film and a development step of developing the film. <13> A semiconductor device having the cured film described in <8> or the laminated body described in <9>. [Invention Effect]

依據本發明,能夠提供一種針對含有聚合物前驅物之感光性樹脂組成物能夠實現基於充分的加熱之硬化性之感光性樹脂組成物及使用了該感光性樹脂組成物之硬化膜、積層體、硬化膜之製造方法、積層體之製造方法以及半導體器件。尤其,能夠提供一種保存穩定性亦優異且作為硬化膜時的機械特性(斷裂伸長率)亦優異之感光性樹脂組成物及使用了該感光性樹脂組成物之硬化膜、積層體、硬化膜之製造方法以及半導體器件。According to the present invention, it is possible to provide a photosensitive resin composition capable of achieving sufficient curability by heating for a photosensitive resin composition containing a polymer precursor, and a cured film, a laminate, and a cured film using the photosensitive resin composition. Manufacturing method of cured film, manufacturing method of laminate, and semiconductor device. In particular, it is possible to provide a photosensitive resin composition having excellent storage stability and excellent mechanical properties (elongation at break) when used as a cured film, and a cured film, laminate, and cured film using the photosensitive resin composition Manufacturing method and semiconductor device.

以下,對本發明的內容進行說明。此外,本說明書中,“~”是指將記載於其前後之數值作為下限值及上限值而包含之範圍的含義而使用。Hereinafter, the content of the present invention will be described. In addition, in this specification, "-" means that the numerical value described before and after it is used as the meaning of the range which is included as a lower limit and an upper limit.

以下所記載之本發明中的構成要件的說明有時基於本發明的代表性實施形態而進行,但本發明並不限定於該等實施形態。 關於本說明書中的基團(原子團)的標記,未記述經取代及未經取代之標記係同時包含不具有取代基者和具有取代基者。例如,“烷基”不僅包含不具有取代基之烷基(未經取代的烷基),還包含具有取代基之烷基(取代烷基)。又,稱為烷基之情況下,可以為鏈狀亦可以為環狀,鏈狀的情況下,可以為直鏈亦可以為支鏈。該等的含義對於烯基或伸烷基、伸烯基亦相同。 本說明書中“曝光”只要無特別限定,除了利用光的曝光以外,利用電子束、離子束等粒子束之描繪亦包含於曝光中。又,作為使用於曝光之光,通常可舉出以水銀燈的明線光譜、準分子雷射為代表之遠紫外線、極紫外線(EUV光)、X射線、電子束等光化射線或放射線。 本說明書中,“(甲基)丙烯酸酯”表示“丙烯酸酯”及“甲基丙烯酸酯”這兩者或其中任一個,“(甲基)丙烯酸”表示“丙烯酸”及“甲基丙烯酸”這兩者或其中任一個,“(甲基)丙烯醯基”表示“丙烯醯基”及“甲基丙烯醯基”這兩者或其中任一個。 本說明書中,“步驟”這一術語,不僅是獨立的步驟,而且即使於無法與其他步驟明確區分之情況下,若可實現對該步驟所期待之作用,則亦包含於本術語中。 本發明中的物性值只要無特別說明,則設為溫度23℃、氣壓101325Pa下的值。 本說明書中,只要沒有特別記載,則重量平均分子量(Mw)及數平均分子量(Mn)基於凝膠滲透層析法(GPC測量),並作為苯乙烯換算值而定義。本說明書中,重量平均分子量(Mw)及數平均分子量(Mn)例如能夠利用HLC-8220(TOSOH CORPORATION製),並作為柱而使用保護柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000及TSKgel Super HZ2000(TOSOH CORPORATION製)而求出。只要沒有特別記載,則將洗提液設為利用THF(四氫呋喃)測量者。又,只要沒有特別記載,則將檢測設為使用UV線(紫外線)的波長254nm檢測器者。The description of the constituent elements of the present invention described below may be performed based on representative embodiments of the present invention, but the present invention is not limited to these embodiments. Regarding the label of the group (atomic group) in this specification, the label system that does not describe substituted and unsubstituted includes both those that do not have a substituent and those that have a substituent. For example, "alkyl" includes not only unsubstituted alkyl (unsubstituted alkyl), but also substituted alkyl (substituted alkyl). In addition, when it is called an alkyl group, it may be chained or cyclic, and when it is chained, it may be linear or branched. The meanings of these are the same for alkenyl, alkylene, and alkenylene. As long as "exposure" in this specification is not particularly limited, in addition to exposure with light, drawing with particle beams such as electron beams and ion beams is also included in exposure. In addition, as the light used for exposure, there are usually actinic rays or radiations such as extreme ultraviolet rays, extreme ultraviolet rays (EUV light), X-rays, electron beams, etc. represented by the bright-ray spectrum of mercury lamps and excimer lasers. In this specification, "(meth)acrylate" means either or both of "acrylate" and "methacrylate", and "(meth)acrylic" means "acrylic" and "methacrylic". Both or either, "(meth)acryloyl" means both or either of "acryloyl" and "methacryloyl". In this specification, the term "step" is not only an independent step, but even if it cannot be clearly distinguished from other steps, if the desired effect of the step can be achieved, it is included in this term. Unless otherwise specified, the physical property values in the present invention are values at a temperature of 23° C. and an air pressure of 101,325 Pa. In this specification, unless otherwise stated, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are based on gel permeation chromatography (GPC measurement) and are defined as styrene conversion values. In this specification, the weight average molecular weight (Mw) and number average molecular weight (Mn) can be, for example, HLC-8220 (manufactured by TOSOH CORPORATION), and guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000 and TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION). As long as there is no special description, the eluent will be measured with THF (tetrahydrofuran). In addition, as long as there is no special description, the detection is to use a UV ray (ultraviolet) wavelength 254 nm detector.

本發明的感光性樹脂組成物(以下,有時簡稱為“本發明的組成物”或“本發明的樹脂組成物”)的特徵為包含具有聚合性基之熱鹼產生劑(以下,有時稱為“特定熱鹼產生劑”)、聚合物前驅物、光聚合起始劑及聚合性化合物。以下,按照較佳的實施形態對本發明進行詳細地說明。The photosensitive resin composition of the present invention (hereinafter, sometimes simply referred to as "the composition of the present invention" or the "resin composition of the present invention") is characterized by including a thermal base generator having a polymerizable group (hereinafter, sometimes It is called "specific thermal base generator"), polymer precursor, photopolymerization initiator and polymerizable compound. Hereinafter, the present invention will be described in detail according to preferred embodiments.

<特定熱鹼產生劑> 特定熱鹼產生劑在200℃以下產生鹼並且在成為所產生之鹽之部位具有聚合性基。 在200℃以下產生鹼係指藉由化合物在200℃以下的溫度下異構化或者分解而變成與原來的化合物相比共軛酸的pKa大的化合物。 上述特定熱鹼產生劑產生鹼之溫度(熱鹼產生溫度)為180℃以下為較佳,亦可以為150℃以下。作為熱鹼產生溫度的下限值,50℃以上為較佳,60℃以上為更佳,70℃以上為進一步較佳,80℃以上為更進一步較佳。將產生熱鹼產生劑的鹼之溫度設為上述上限值以下,藉此與在更高溫下產生者相比,能夠在低能耗下產生鹼並使樹脂硬化,因此較佳。另一方面,將產生鹼之溫度設為上述的下限值以上,藉此室溫下的保管等、保存時分解化合物等而產生鹼,藉此能夠抑制或防止樹脂硬化,因此較佳。 又,特定熱鹼產生劑為在後述之加熱步驟中在上述溫度範圍內產生鹼為較佳。 另外,特定熱鹼產生劑為在硬化膜的耐熱溫度以下產生鹼之化合物為較佳。<Specific hot alkali generator> The specific thermal base generator generates a base at 200°C or lower and has a polymerizable group at the site of the salt to be generated. The generation of a base at 200°C or lower means that the compound becomes a compound with a larger pKa of the conjugate acid than the original compound by isomerization or decomposition at a temperature of 200°C or lower. The temperature at which the above-mentioned specific hot alkali generator generates alkali (hot alkali generation temperature) is preferably 180°C or less, and may also be 150°C or less. As the lower limit of the hot alkali generation temperature, 50°C or higher is preferred, 60°C or higher is more preferred, 70°C or higher is more preferred, and 80°C or higher is even more preferred. It is preferable to set the temperature of the alkali that generates the hot alkali generator to be less than the above-mentioned upper limit because it can generate alkali with low energy consumption and harden the resin compared to those generated at higher temperatures. On the other hand, it is preferable to set the temperature at which the alkali is generated to be equal to or higher than the above-mentioned lower limit, so as to decompose compounds during storage at room temperature and the like to generate alkali, thereby suppressing or preventing hardening of the resin. In addition, it is preferable that the specific thermal alkali generator generates alkali within the above-mentioned temperature range in the heating step described later. In addition, the specific thermal alkali generator is preferably a compound that generates alkali below the heat-resistant temperature of the cured film.

作為本發明的實施形態,亦能夠摻合產生鹼之溫度不同之2種以上的特定熱鹼產生劑。藉由該種構成,例如階段性產生鹼,能夠使加熱時的聚合物前驅物的環化反應更有效地進行。As an embodiment of the present invention, two or more specific thermal alkali generators having different alkali generation temperatures can also be blended. With this configuration, for example, the base is generated in stages, so that the cyclization reaction of the polymer precursor during heating can proceed more efficiently.

<<聚合性基>> 特定熱鹼產生劑具有聚合性基。聚合性基位於成為所產生之鹼之部位。特定熱鹼產生劑所具有之聚合性基的數量並無特別限定,可以為1個,亦可以具有複數個。從抑制特定熱鹼產生劑的分子量之觀點考慮,1分子中的聚合性基的數量為10以下為較佳,5以下為更佳,3以下為進一步較佳。下限值並無特別限制,為1以上即可。 聚合性基可例示進行自由基聚合者、進行加聚者、進行縮聚者等,進行自由基聚合者、進行加聚者為較佳,進行自由基聚合者為更佳。 作為聚合性基,例如可舉出環氧基(包含環氧丙基)、氧環丁烷基、乙烯性不飽和基或由下述式(Z)表示之基團。 作為乙烯性不飽和基,可舉出乙烯基、乙烯氧基、烯丙基、甲基烯丙基、丙烯基、丁烯基、乙烯基苯基、(甲基)丙烯醯基、(甲基)丙烯醯氧基、(甲基)丙烯醯基胺基等,其中,乙烯基、乙烯基苯基、(甲基)丙烯醯基、(甲基)丙烯醯氧基、(甲基)丙烯醯基胺基為較佳。(甲基)丙烯醯基胺基的胺基並不限定於-NH-,可以為-NRN -(RN 為烷基、烯基、芳基、芳基烷基或雜環基,具體而言,選自後述之取代基T中所記載之烷基等)的結構。RN 可以與聚合性基所連接之連接基或熱鹼產生劑的母結構連結而形成環。作為所形成之環,可舉出後述之環Cn的例子。本說明書中,將此處所例示之乙烯性不飽和基稱為Et,將包含該乙烯性不飽和基之聚合性基稱為Ps。<<Polymerizable group>> The specific thermal base generator has a polymerizable group. The polymerizable group is located at the site that becomes the base produced. The number of polymerizable groups possessed by the specific thermal base generator is not particularly limited, and may be one or plural. From the viewpoint of suppressing the molecular weight of the specific thermal base generator, the number of polymerizable groups in one molecule is preferably 10 or less, more preferably 5 or less, and more preferably 3 or less. The lower limit is not particularly limited, and may be 1 or more. Examples of the polymerizable group include those undergoing radical polymerization, those undergoing addition polymerization, and those undergoing polycondensation. Those undergoing radical polymerization and addition polymerization are preferred, and those undergoing radical polymerization are more preferred. Examples of the polymerizable group include an epoxy group (including a glycidyl group), an oxetane group, an ethylenically unsaturated group, or a group represented by the following formula (Z). Examples of ethylenically unsaturated groups include vinyl, vinyloxy, allyl, methallyl, propenyl, butenyl, vinylphenyl, (meth)acrylic acid, (methyl) ) Allyloxy, (meth)acrylic amino, etc., among which vinyl, vinylphenyl, (meth)acrylic, (meth)acrylic, (meth)acrylic An amino group is preferred. The amine group of the (meth)acryloylamino group is not limited to -NH-, and may be -NR N- (R N is an alkyl, alkenyl, aryl, arylalkyl or heterocyclic group, specifically In other words, it is selected from the structure of the alkyl group described in the substituent T described later). RN may be connected to the linker to which the polymerizable group is connected or the parent structure of the thermal base generator to form a ring. As the ring to be formed, an example of the ring Cn described later can be given. In this specification, the ethylenically unsaturated group exemplified here is referred to as Et, and the polymerizable group containing the ethylenically unsaturated group is referred to as Ps.

[化學式6]

Figure 02_image011
式(Z)中,Rc表示氧原子、氮原子或(n+2)價的芳香族基。Ra及Rb分別獨立地表示氫原子或有機基團。n表示0~6的整數。Rc為氧原子的情況下,n為0。Rc為氮原子的情況下,n為1。Rc例如為苯環的情況下,n為0~4的整數。*表示鍵結鍵。 作為(n+2)價的芳香族基,可舉出芳香族烴基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或芳香族雜環基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳),更具體而言,可舉出包含後述之芳香族烴環Ary及芳香族雜環Aro之基團。 Ra及Rb為有機基團時,作為其有機基團,可舉出分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、芳基烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)。其中,烷基為較佳,具體而言,可舉出後述之Alk的例子。[Chemical formula 6]
Figure 02_image011
In the formula (Z), Rc represents an oxygen atom, a nitrogen atom, or a (n+2)-valent aromatic group. Ra and Rb each independently represent a hydrogen atom or an organic group. n represents an integer of 0-6. When Rc is an oxygen atom, n is 0. When Rc is a nitrogen atom, n is 1. When Rc is a benzene ring, for example, n is an integer of 0-4. * Indicates a bonding key. Examples of the (n+2)-valent aromatic group include an aromatic hydrocarbon group (a carbon number of 6-22 is preferred, 6-18 is more preferred, and 6-10 is even more preferred) or aromatic heterocyclic group ( The carbon number is preferably from 1 to 24, more preferably from 1 to 12, and even more preferably from 1 to 6), more specifically, a group including the aromatic hydrocarbon ring Ary and the aromatic heterocyclic ring Aro described later . When Ra and Rb are organic groups, examples of the organic groups include independently alkyl groups (1 to 12 carbon atoms are preferred, 1 to 6 are more preferred, and 1 to 3 are further preferred), Alkenyl (2 to 12 carbons is preferred, 2 to 6 is more preferred, 2 to 3 is more preferred), aryls (6 to 22 are preferred, 6 to 18 is more preferred, 6 to 10 Is further preferred), arylalkyl (carbon number 7-23 is preferred, 7-19 is more preferred, 7-11 is further preferred). Among them, the alkyl group is preferred, and specifically, the example of Alk described later can be given.

由上述式(Z)表示之基團為由下述(Z1)、(Z2)或(Z3)表示之基團為較佳。The group represented by the above formula (Z) is preferably a group represented by the following (Z1), (Z2) or (Z3).

[化學式7]

Figure 02_image013
式中的Ra1 為有機基團。作為有機基團的例,可舉出烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、芳基烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)。其中,烷基為較佳,具體而言,可舉出後述之Alk的例子。 Rb1 為氫原子或甲基。 nb為1~5的整數。na為成為5-nb之整數。*為鍵結鍵。 Ar1 可舉出芳香族烴基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或芳香族雜環基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳),更具體而言,可舉出包含後述之芳香族烴環Ary及芳香族雜環Aro之基團。其中,Ar1 為苯基為較佳。[Chemical formula 7]
Figure 02_image013
Ra 1 in the formula is an organic group. Examples of organic groups include alkyl groups (1 to 12 carbon atoms are preferable, 1 to 6 are more preferable, and 1 to 3 are more preferable), alkenyl groups (2 to 12 carbons are preferable, 2-6 is more preferable, 2-3 is more preferable), aryl (carbon number 6-22 is preferable, 6-18 is more preferable, 6-10 is more preferable), arylalkyl (carbon The number is preferably from 7 to 23, more preferably from 7 to 19, and even more preferably from 7 to 11). Among them, the alkyl group is preferred, and specifically, the example of Alk described later can be given. Rb 1 is a hydrogen atom or a methyl group. nb is an integer of 1-5. na is an integer that becomes 5-nb. * Is a bonding key. Ar 1 can be exemplified by an aromatic hydrocarbon group (with 6 to 22 carbons, more preferably 6 to 18, and even more preferably 6 to 10) or aromatic heterocyclic groups (with 1 to 24 carbons, 1 -12 is more preferable, and 1 to 6 are more preferable). More specifically, a group including the aromatic hydrocarbon ring Ary and the aromatic heterocyclic ring Aro described later can be mentioned. Among them, Ar 1 is preferably a phenyl group.

其中,聚合性基為環氧基(可以包含或不包含環氧丙基)、氧環丁烷基或乙烯性不飽和基為較佳,環氧基或乙烯性不飽和基為更佳。Among them, the polymerizable group is preferably an epoxy group (which may or may not contain a glycidyl group), an oxetane group or an ethylenically unsaturated group, and an epoxy group or an ethylenically unsaturated group is more preferable.

<<連接基>> 特定熱鹼產生劑中,聚合性基可以經由連接基導入到化合物中。聚合性基伴隨或不伴隨連接基而導入之結構例如能夠由下述式(Zp)表示。另外,本說明書中,稱為“具有聚合性基”、“包含聚合性基”等時,如上所述包含聚合性基被連接基導入到母結構之樣態。 *-Zp-Ps   式(Zp) *表示與熱鹼產生劑的母結構的鍵結位置。Ps的含義與上述聚合性基Ps相同。 Zp為單鍵或連接基(以下,以包含單鍵之含義,有時稱為連接基Zp或簡稱為Zp)。該連接基Zp只要能夠將聚合性基與鹼產生劑的母結構連接,則其結構並無特別限制。因此,只要不會過長或過大,則可以為任何結構的連接基。例如,將聚合性基導入到熱鹼產生劑的母結構時,考慮成為連接基之部位的反應性或與母結構或聚合性基的反應性等而能夠適當確定。 Zp的連結鏈長度亦沒有特別限制,但是若考慮實際上的連接基的結構,則為0~24為較佳,0~12為更佳,0~6為進一步較佳(0係指單鍵)。 Zp為連接基時,作為構成其之原子,碳原子及氫原子根據需要包含雜原子(選自氧原子、氮原子、硫原子之至少1種等)為較佳。連接基中的碳原子的數量為1~24個為較佳,1~12個為更佳,1~6個為進一步較佳。氫原子按照碳原子等的數量來確定即可。雜原子的數量為氧原子、氮原子、硫原子等分別獨立地為0~12個為較佳,0~6個為更佳,0~3個為進一步較佳。 作為具體的連接基的種類廣泛,可舉出後述之連接基L的例子。 其中,Zp為伸烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、氧原子(氧基)、羰基、-NH-、-NRN -及組合該等而成之基團為較佳。RN 可以與其他部位連結而形成環狀結構。具體而言,作為所形成之環狀結構,可舉出下述環Cn的例子。<<Linker>> In the specific thermal base generator, the polymerizable group can be introduced into the compound via the linker. The structure in which the polymerizable group is introduced with or without the linking group can be represented by the following formula (Zp), for example. In addition, in the present specification, when it is referred to as "having a polymerizable group", "including a polymerizable group", etc., it includes the state where the polymerizable group is introduced into the parent structure by the linking group as described above. *-Zp-Ps formula (Zp) * indicates the bonding position with the parent structure of the hot alkali generator. The meaning of Ps is the same as the above-mentioned polymerizable group Ps. Zp is a single bond or a linking group (hereinafter, to include a single bond, it is sometimes called a linking group Zp or Zp for short). The structure of the linking group Zp is not particularly limited as long as it can connect the polymerizable group to the parent structure of the base generator. Therefore, as long as it is not too long or too large, it can be a linking base of any structure. For example, when the polymerizable group is introduced into the parent structure of the thermal base generator, it can be appropriately determined in consideration of the reactivity of the site serving as the linking group or the reactivity with the parent structure or the polymerizable group. The length of the linking chain of Zp is also not particularly limited, but considering the structure of the actual linking group, 0-24 is preferred, 0-12 is more preferred, and 0-6 is further preferred (0 means single bond ). When Zp is a linking group, it is preferable that the carbon atom and the hydrogen atom include a hetero atom (at least one selected from an oxygen atom, a nitrogen atom, and a sulfur atom) as the atoms constituting it as necessary. The number of carbon atoms in the linking group is preferably 1-24, more preferably 1-12, and still more preferably 1-6. The hydrogen atoms may be determined according to the number of carbon atoms and the like. The number of heteroatoms is preferably 0-12 independently of oxygen atoms, nitrogen atoms, sulfur atoms, etc., more preferably 0-6, and still more preferably 0-3. As the types of specific linking groups are wide, examples of linking groups L described later can be given. Among them, Zp is an alkylene group (the carbon number is preferably from 1 to 12, the carbon number is more preferably from 1 to 6, and the 1-3 is even more preferred), and the arylene group (the carbon number is preferably from 6 to 22, and from 6 to 18 is More preferably, 6 to 10 are further preferred), an oxygen atom (oxy group), a carbonyl group, -NH-, -NR N -, and groups formed by combining these are preferred. RN may be connected to other parts to form a ring structure. Specifically, as the cyclic structure formed, the following examples of the ring Cn can be given.

連接基Zp為由以下的式z1~z8表示之連接基或其組合為更佳。nz為0~12的整數,0~6為較佳,0~3為更佳。*為與熱鹼產生劑的母結構的鍵結位置。**為與Ps的鍵結位置。RM 為氫原子或由上述RN 定義之基團。RM 可舉出在下述式z5~z8中與nz的括號內的亞甲基連結而形成環狀結構之樣態。具體而言,可舉出下述環Cn的例,進而具體而言可舉出哌啶環。 [化學式8]

Figure 02_image015
It is more preferable that the linking group Zp is a linking group represented by the following formulas z1 to z8 or a combination thereof. nz is an integer of 0-12, preferably 0-6, more preferably 0-3. * Is the bonding position with the parent structure of the hot alkali generator. ** is the bond position with Ps. R M is a hydrogen atom or a group defined by R N above. R M may be connected to the methylene group in the parentheses of nz in the following formulas z5 to z8 to form a cyclic structure. Specifically, examples of the following ring Cn can be given, and more specifically, a piperidine ring can be given. [Chemical formula 8]
Figure 02_image015

特定熱鹼產生劑可以為四級銨鹽,亦可以為羧酸醯胺及胺基甲酸酯,但是羧酸醯胺為較佳。藉由熱鹼產生劑為羧酸醯胺的結構,傾向於化合物結構藉由加熱而產生變化之前的共軛酸pKa較低且提高組成物的保存穩定性。The specific thermal base generator may be a quaternary ammonium salt, or may be a carboxylic acid amide and a carbamate, but the carboxylic acid amide is preferred. Since the thermal base generator is a carboxylic acid amide, the pKa of the conjugate acid before the compound structure is changed by heating tends to be low and the storage stability of the composition is improved.

<<式(N1)>> 特定熱鹼產生劑具有由下述式(N1)表示之結構為較佳。 [化學式9]

Figure 02_image017
<<Formula (N1)>> The specific thermal base generator preferably has a structure represented by the following formula (N1). [Chemical formula 9]
Figure 02_image017

式(N1)中,X為單鍵或2價的連結基。作為2價的連結基,可舉出後述之連接基L的例子。其中,烴基為較佳,伸烷基、伸烯基、伸芳基或其組合之基團為較佳。X為2價的連結基時的碳數為2~18為較佳,2~12為更佳,2~8為進一步較佳。X為2價的連結基時的連結鏈長度為1~12為較佳,1~8為更佳,1~6為進一步較佳。具體而言,可舉出伸乙基、伸丙基、伸丁基、伸乙烯基、伸苯基、伸苯基亞甲基、伸苯基伸乙基、亞甲基伸苯基亞甲基。在發揮本發明的效果之範圍內,X亦可以適當地具有取代基T。例如可舉出在預定的連接基具有羥基或羧基之樣態等。In the formula (N1), X is a single bond or a divalent linking group. As the bivalent linking group, examples of linking group L described later can be given. Among them, the hydrocarbon group is preferred, and the alkylene group, alkenylene group, arylene group or a combination thereof is preferred. When X is a divalent linking group, the carbon number is preferably 2-18, more preferably 2-12, and still more preferably 2-8. The link chain length when X is a divalent linking group is preferably 1-12, more preferably 1-8, and still more preferably 1-6. Specifically, ethylene group, propylene group, butyl group, ethylene group, phenyl group, phenylene group, phenylene group, and methylene phenylene group can be mentioned. In the range where the effect of the present invention is exerted, X may have a substituent T as appropriate. For example, the aspect in which a predetermined linking group has a hydroxyl group or a carboxyl group, etc. are mentioned.

R1 分別獨立地表示氫原子或有機基團。作為有機基團,可舉出在後述之取代基T中規定之有機基團。有機基團的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。其中,R1 為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R1 亦可以具有取代基T。R 1 each independently represents a hydrogen atom or an organic group. As an organic group, the organic group specified in the substituent T mentioned later can be mentioned. The carbon number of the organic group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. Among them, R 1 is an alkyl group (the carbon number is preferably 1 to 12, more preferably 1 to 6, and more preferably 1 to 3). R 1 may have a substituent T within the range of exerting the effect of the present invention.

n2為2且R1 為2個時,該兩者不會都是氫原子。 n1及n2為1或2,n1+n2為3。 n3為0或1。 其中,n3為1時,X不是單鍵。 n1為2時,2個[ ]內的基團可以彼此相同亦可以不同。 n2為2時,2個R1 可以彼此相同亦可以不同。When n2 is 2 and R 1 is 2, both of them are not hydrogen atoms. n1 and n2 are 1 or 2, and n1+n2 is 3. n3 is 0 or 1. Wherein, when n3 is 1, X is not a single bond. When n1 is 2, the groups in the two [] may be the same or different from each other. When n2 is 2, two R 1 may be the same or different from each other.

n2為2時,2個R1 可以彼此連結而形成環狀結構。作為所形成之環狀結構,可舉出脂肪族烴環(將以下所例示者稱為環Cf)(例如,環丙烷環、環丁烷環、環戊烷環、環己烷環、環丙烯環、環丁烯環、環戊烯環、環己烯環等)、芳香族烴環(將以下所例示者稱為環Cr)(苯環、萘環、蒽環、菲環等)、含氮雜環(將以下所例示者稱為環Cn)(例如,吡咯環、咪唑環、吡唑環、吡啶環、吡咯啉環、吡咯啶環、咪唑環、吡唑啶環、哌啶環、哌𠯤環、口末啉環等)、含酸素雜環(將以下所例示者稱為環Co)(呋喃環、哌喃環、環氧乙烷環、氧環丁烷環、四氫呋喃環、四氫哌喃環、二口咢口山環等)、含硫雜環(將以下所例示者稱為環Cs)(噻吩環、環硫乙烷環、硫環丁烷環、四氫噻吩環、四氫噻喃環等)等。將該等環統稱為環Cy。When n2 is 2, two R 1 may be connected to each other to form a ring structure. Examples of the formed cyclic structure include aliphatic hydrocarbon rings (the ones exemplified below are referred to as ring Cf) (for example, cyclopropane ring, cyclobutane ring, cyclopentane ring, cyclohexane ring, cyclopropene ring Ring, cyclobutene ring, cyclopentene ring, cyclohexene ring, etc.), aromatic hydrocarbon ring (the exemplified below is called ring Cr) (benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, etc.), Nitrogen heterocycles (the ones exemplified below are referred to as ring Cn) (for example, pyrrole ring, imidazole ring, pyrazole ring, pyridine ring, pyrroline ring, pyrrolidine ring, imidazole ring, pyrazole ring, piperidine ring, Piper 𠯤 ring, oromoline ring, etc.), acid-containing heterocyclic ring (the following examples are called ring Co) (furan ring, piperan ring, oxirane ring, oxetane ring, tetrahydrofuran ring, tetrahydrofuran Hydropiperan ring, two mouth ring mountain ring, etc.), sulfur-containing heterocyclic ring (the following examples are referred to as ring Cs) (thiophene ring, sulfide ring, thiocyclobutane ring, tetrahydrothiophene ring, Tetrahydrothiopyran ring, etc.) and so on. These rings are collectively referred to as the ring Cy.

R1 中的至少一個具有聚合性基。關於聚合性基,可舉出上述Ps的例,作為其連結的樣態,可舉出上述連接基Zp的例子。At least one of R 1 has a polymerizable group. As for the polymerizable group, examples of the above-mentioned Ps can be given, and examples of the linking group Zp mentioned above can be given as an aspect of its connection.

上述式(N1)為下述式(N1-1)、式(N1-2)及式(N1-3)中的任一個為較佳。 [化學式10]

Figure 02_image019
式(N1-1)中,X1 為2價的連結基,作為其較佳的範圍,可舉出上述X的例子。在發揮本發明的效果之範圍內,X1 亦可以適當地具有取代基T。 R11 及R12 分別獨立地表示氫原子或有機基團。作為R11 及R12 的有機基團,分別獨立地可舉出後述之取代基T中規定之有機基團。有機基團的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。尤其,R11 及R12 分別獨立地表示烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。其中,R11 及R12 該兩者不會都是氫原子。在發揮本發明的效果之範圍內,R11 及R12 亦可以具有取代基T。 R11 與R12 可以彼此連結而形成環狀結構。作為所形成之環,可舉出環Cy的例子。 R11 及R12 中的至少一個具有聚合性基。關於聚合性基,可舉出上述Ps的例,作為其連結的樣態,可舉出上述連接基Zp的例子。The above formula (N1) is preferably any one of the following formula (N1-1), formula (N1-2), and formula (N1-3). [Chemical formula 10]
Figure 02_image019
In formula (N1-1), X 1 is a divalent linking group, and examples of the above-mentioned X can be given as a preferable range. In the range where the effect of the present invention is exerted, X 1 may have a substituent T as appropriate. R 11 and R 12 each independently represent a hydrogen atom or an organic group. As the organic group of R 11 and R 12 , each independently includes the organic group specified in the substituent T described later. The carbon number of the organic group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. In particular, R 11 and R 12 each independently represent an alkyl group (the carbon number is preferably from 1 to 12, preferably from 1 to 6 and more preferably from 1 to 3). However, both of R 11 and R 12 are not hydrogen atoms. R 11 and R 12 may have a substituent T within the range of exerting the effect of the present invention. R 11 and R 12 may be connected to each other to form a ring structure. As the formed ring, an example of the ring Cy can be given. At least one of R 11 and R 12 has a polymerizable group. As for the polymerizable group, examples of the above-mentioned Ps can be given, and examples of the linking group Zp mentioned above can be given as an aspect of its connection.

式(N1-2)中,X2 為2價的連結基,作為其較佳的範圍,可舉出上述X的例子。在發揮本發明的效果之範圍內,X2 亦可以適當地具有取代基T。 R13 及R14 分別獨立地表示氫原子或有機基團。作為R13 及R14 的有機基團,分別獨立地可舉出後述之取代基T中規定之有機基團。有機基團的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。尤其,R13 及R14 分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。其中,R13 及R14 該兩者不會都是氫原子。在發揮本發明的效果之範圍內,R13 及R14 亦可以具有取代基T。 R13 與R14 可以彼此連結而形成環狀結構。作為所形成之環,可舉出環Cy的例子。 R13 及R14 中的至少一個具有聚合性基。關於聚合性基,可舉出上述Ps的例,作為其連結的樣態,可舉出上述連接基Zp的例子。In the formula (N1-2), X 2 is a divalent linking group, and examples of the above-mentioned X can be given as a preferable range. In the range where the effect of the present invention is exerted, X 2 may have a substituent T as appropriate. R 13 and R 14 each independently represent a hydrogen atom or an organic group. As the organic group for R 13 and R 14 , each independently includes the organic groups specified in the substituent T described later. The carbon number of the organic group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. In particular, R 13 and R 14 are each independently an alkyl group (the carbon number is preferably from 1 to 12, preferably from 1 to 6 and more preferably from 1 to 3). However, both of R 13 and R 14 are not hydrogen atoms. R 13 and R 14 may have a substituent T within the range of exerting the effect of the present invention. R 13 and R 14 may be connected to each other to form a ring structure. As the formed ring, an example of the ring Cy can be given. At least one of R 13 and R 14 has a polymerizable group. As for the polymerizable group, examples of the above-mentioned Ps can be given, and examples of the linking group Zp mentioned above can be given as an aspect of its connection.

式(N1-3)中,X3 為2+m4價的連結基,其中,芳香族烴基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)為較佳,以環結構而言,可舉出後述之芳香族烴環Ary的例子。在發揮本發明的效果之範圍內,X3 亦可以適當地具有取代基T。 Y1 為由-(CO)m3 -OH表示之基團,m3為0或1。 R15 ~R18 分別獨立地表示氫原子或有機基團。作為R15 ~R18 的有機基團,分別獨立地可舉出後述之取代基T中規定之有機基團。有機基團的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。尤其,R15 ~R18 分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。 m4為0~12的整數,0~8的整數為較佳,0~4的整數為更佳。 R15 及R16 該兩者不會都是氫原子。R15 與R16 可以彼此連結而形成環。作為所形成之環,可舉出環Cy的例子。R15 及R16 中的至少一個具有聚合性基。關於聚合性基,可舉出上述Ps的例,作為其連結的樣態,可舉出上述連接基Zp的例子。在發揮本發明的效果之範圍內,R15 及R16 亦可以具有取代基T。 R17 及R18 該兩者不會都是氫原子。R17 與R18 可以彼此連結而形成環。作為所形成之環,可舉出環Cy的例子。R17 及R18 中的至少一個具有聚合性基。關於聚合性基,可舉出上述Ps的例,作為其連結的樣態,可舉出上述連接基Zp的例子。在發揮本發明的效果之範圍內,R17 及R18 亦可以具有取代基T。 X3 為由芳香族環構成之連接基時,苯環為較佳,該情況下,例如可舉出作為Y1 取代2個羧基之樣態。若具體地表示,則可舉出下述式(N1-3a)。In the formula (N1-3), X 3 is a 2+m4 linking group, among which, an aromatic hydrocarbon group (the carbon number is preferably 6-22, 6-18 is more preferably, 6-10 is more preferably) is Preferably, in terms of the ring structure, an example of the aromatic hydrocarbon ring Ary described later can be given. In the range where the effect of the present invention is exerted, X 3 may have a substituent T as appropriate. Y 1 is a group represented by -(CO) m3 -OH, and m3 is 0 or 1. R 15 to R 18 each independently represent a hydrogen atom or an organic group. As the organic group of R 15 to R 18 , each independently includes the organic group specified in the substituent T described later. The carbon number of the organic group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. In particular, R 15 to R 18 are each independently an alkyl group (the carbon number is preferably from 1 to 12, from 1 to 6 is more preferably, and from 1 to 3 is more preferably) is preferably. m4 is an integer of 0-12, preferably an integer of 0-8, and more preferably an integer of 0-4. Both R 15 and R 16 are not hydrogen atoms. R 15 and R 16 may be connected to each other to form a ring. As the formed ring, an example of the ring Cy can be given. At least one of R 15 and R 16 has a polymerizable group. As for the polymerizable group, examples of the above-mentioned Ps can be given, and examples of the linking group Zp mentioned above can be given as an aspect of its connection. R 15 and R 16 may have a substituent T within the range of exerting the effect of the present invention. Both R 17 and R 18 are not hydrogen atoms. R 17 and R 18 may be connected to each other to form a ring. As the formed ring, an example of the ring Cy can be given. At least one of R 17 and R 18 has a polymerizable group. As for the polymerizable group, examples of the above-mentioned Ps can be given, and examples of the linking group Zp mentioned above can be given as an aspect of its connection. R 17 and R 18 may have a substituent T within the range of exerting the effect of the present invention. When X 3 is a linking group constituted by an aromatic ring, a benzene ring is preferred. In this case, for example, the aspect in which two carboxyl groups are substituted as Y 1 can be mentioned. If it expresses specifically, the following formula (N1-3a) is mentioned.

[化學式11]

Figure 02_image021
式中,R15 ~R18 分別獨立地表示氫原子或有機基團。R15 ~R18 的較佳的樣態的含義與先前以式(N1-3)定義的相同。R15 與R16 、R17 與R18 各兩者不會都是氫原子,可以形成環Cy。R15 及R16 中的至少任一個又R17 及R18 中的至少任一個具有聚合性基Ps,聚合性基亦可以經由連接基Zp導入到母結構。[Chemical formula 11]
Figure 02_image021
In the formula, R 15 to R 18 each independently represent a hydrogen atom or an organic group. The meanings of the preferable aspects of R 15 to R 18 are the same as those previously defined by formula (N1-3). R 15 and R 16 , and R 17 and R 18 are not hydrogen atoms, and may form a ring Cy. At least any one of R 15 and R 16 and at least one of R 17 and R 18 have a polymerizable group Ps, and the polymerizable group may be introduced into the parent structure via a linking group Zp.

以下,例示形成由式(N1)表示之特定熱鹼產生劑之化合物,但是本發明並不以此來限定性地解釋。Hereinafter, the compound forming the specific thermal base generator represented by formula (N1) is exemplified, but the present invention is not limitedly interpreted by this.

[化學式12]

Figure 02_image023
[Chemical formula 12]
Figure 02_image023

<<式(N2)>> 特定熱鹼產生劑具有由下述式(N2)表示之結構亦為較佳。 [化學式13]

Figure 02_image025
式(N2)中,R2 表示氫原子或有機基團。作為R2 的有機基團,可舉出後述之取代基T中規定之有機基團。有機基團的碳數為1以上為較佳。作為上限,30以下為較佳,18以下為更佳,14以下為進一步較佳。尤其,R2 為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或芳基烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R2 亦可以具有取代基T。<<Formula (N2)>> It is also preferable that the specific thermal base generator has a structure represented by the following formula (N2). [Chemical formula 13]
Figure 02_image025
In the formula (N2), R 2 represents a hydrogen atom or an organic group. Examples of the organic group for R 2 include the organic groups specified in the substituent T described below. The carbon number of the organic group is preferably 1 or more. As the upper limit, 30 or less is preferable, 18 or less is more preferable, and 14 or less is more preferable. In particular, R 2 is an alkyl group (the carbon number is preferably 1 to 12, more preferably 1 to 6, and more preferably 1 to 3), an aryl group (the carbon number is preferably 6 to 22, and more preferably 6 to 18). Preferably, 6-10 is more preferable) or arylalkyl (the carbon number is 7-23 is preferable, 7-19 is more preferable, 7-11 is more preferable) is preferable. R 2 may have a substituent T within the range of exerting the effect of the present invention.

R3 為有機基團,烷基(碳數1~24為較佳,2~18為更佳,3~14為進一步較佳)、芳基(碳數6~30為較佳,6~24為更佳,6~18為進一步較佳)、芳基烷基(碳數7~31為較佳,7~25為更佳,7~19為進一步較佳)或含雜環基的基團(碳數1~30為較佳,2~24為更佳,3~18為進一步較佳;雜環基為5員環、6員環或該等組合為較佳;作為雜環基的具體例可舉出後述之取代基T的例)為較佳。在發揮本發明的效果之範圍內,R3 亦可以具有取代基T。R 3 is an organic group, an alkyl group (the carbon number is preferably 1-24, 2-18 is more preferable, and 3-14 is more preferable), an aryl group (the carbon number is preferably 6-30, 6-24 More preferably, 6-18 is further preferred), arylalkyl (the carbon number is preferably 7 to 31, 7-25 is more preferred, 7-19 is further preferred), or a heterocyclic group-containing group (The carbon number is preferably 1-30, 2-24 is more preferable, 3-18 is more preferable; the heterocyclic group is preferably a 5-membered ring, a 6-membered ring or a combination of these; Examples include the examples of the substituent T described later). R 3 may have a substituent T within the range of exerting the effect of the present invention.

n4及n5為1或2,n4+n5為3。n5為2時,R2 不會兩個都是氫原子。n4為2時,( )內的基團可以彼此相同亦可以不同。n5為2時,2個R2 可以彼此相同亦可以不同。2個R2 可以彼此連結而形成環狀結構,作為所形成之環,可舉出環Cy的例子。 R2 中的至少一個具有聚合性基。作為聚合性基的種類,可舉出聚合性基Ps的例,與母結構的連結可舉出連接基Zp的例子。n4 and n5 are 1 or 2, and n4+n5 is 3. When n5 is 2, R 2 will not be both hydrogen atoms. When n4 is 2, the groups in () may be the same or different from each other. When n5 is 2, two R 2 may be the same or different from each other. Two R 2 may be connected to each other to form a cyclic structure, and examples of the ring formed include the ring Cy. At least one of R 2 has a polymerizable group. As the type of the polymerizable group, an example of the polymerizable group Ps can be given, and the connection with the parent structure can be an example of the linking group Zp.

上述式(N2)由下述式(N2-1)或式(N2-2)表示為較佳。 [化學式14]

Figure 02_image027
The above formula (N2) is preferably represented by the following formula (N2-1) or formula (N2-2). [Chemical formula 14]
Figure 02_image027

式(N2-1)中,R21 及R22 分別獨立地表示氫原子或有機基團。其中,R21 及R22 該兩者不會都是氫原子。R21 及R22 為有機基團時,作為其有機基團,可舉出後述之取代基T的有機基團。其中,烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R21 及R22 亦可以具有取代基T。 R21 及R22 中的至少一個具有聚合性基。作為聚合性基,可舉出上述聚合性基Ps的例,與R21 、R22 側的連結可舉出藉由連接基Zp之連結。R21 與R22 可以彼此連結而形成環。作為所形成之環,可舉出環Cy的例子。 R31 為有機基團,烷基為較佳。此時的烷基為碳數1~24為較佳,1~18為更佳,1~12為進一步較佳,尤其三級烷基(例如可舉出第三丁基、1,1-二甲基丙基、金剛烷基)為較佳。在發揮本發明的效果之範圍內,R31 亦可以具有取代基T。In formula (N2-1), R 21 and R 22 each independently represent a hydrogen atom or an organic group. However, both R 21 and R 22 are not hydrogen atoms. When R 21 and R 22 are organic groups, examples of the organic groups include organic groups of the substituent T described later. Among them, an alkyl group (the carbon number is preferably from 1 to 12, from 1 to 6 is more preferred, and from 1 to 3 is even more preferred) is preferred. R 21 and R 22 may have a substituent T within the range of exerting the effect of the present invention. At least one of R 21 and R 22 has a polymerizable group. Examples of the polymerizable group include the above-mentioned polymerizable group Ps, and the connection to the R 21 and R 22 side includes the connection via the linking group Zp. R 21 and R 22 may be connected to each other to form a ring. As the formed ring, an example of the ring Cy can be given. R 31 is an organic group, and an alkyl group is preferred. In this case, the alkyl group has preferably 1-24 carbon atoms, more preferably 1-18, and even more preferably 1-12, especially tertiary alkyl (for example, tertiary butyl, 1,1-di Methylpropyl, adamantyl) are preferred. R 31 may have a substituent T within the range of exerting the effect of the present invention.

式(N2-2)中,R23 及R24 分別獨立地表示氫原子或有機基團。其中,R23 及R24 該兩者不會都是氫原子。R23 及R24 為有機基團時,作為其有機基團,可舉出後述之取代基T的有機基團。其中,烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R23 及R24 亦可以具有取代基T。 R23 及R24 中的至少一個具有聚合性基。作為合性基,可舉出上述聚合性基Ps的例,與R23 、R24 側的連結可舉出藉由連接基Zp之連結。R23 與R24 可以彼此連結而形成環。作為所形成之環,可舉出環Cy的例子。 L1 為單鍵或連接基,尤其連接基為較佳。L1 為連接基時,可舉出後述之連接基L的例,其中,伸烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。 Ar2 為芳香族環,芳香族烴環(碳數6~22為較佳,6~18為更佳,6~14為進一步較佳;5員環或6員環或者至少任一個雜環為較佳;作為具體例可舉出Ary的例)或芳香族雜環(碳數2~24為較佳,2~18為更佳,2~12為進一步較佳;作為雜原子,氧原子、氮原子、硫原子為較佳,雜原子以各個原子的數計為1~12為較佳,1~6為更佳,1~3為進一步較佳;作為具體例,可舉出Aro的例或者硫雜蒽10,10-二氧化物)為較佳。在發揮本發明的效果之範圍內,Ar2 亦可以具有取代基T。In the formula (N2-2), R 23 and R 24 each independently represent a hydrogen atom or an organic group. However, both R 23 and R 24 are not hydrogen atoms. When R 23 and R 24 are organic groups, examples of the organic groups include organic groups of the substituent T described later. Among them, an alkyl group (the carbon number is preferably 1 to 12, more preferably 1 to 6, and even more preferably 1 to 3) is preferred. R 23 and R 24 may have a substituent T within the range of exerting the effect of the present invention. At least one of R 23 and R 24 has a polymerizable group. Examples of the binding group include the above-mentioned polymerizable group Ps, and the connection to the side of R 23 and R 24 includes connection through the linking group Zp. R 23 and R 24 may be connected to each other to form a ring. As the formed ring, an example of the ring Cy can be given. L 1 is a single bond or a linking group, and a linking group is particularly preferred. When L 1 is a linking group, examples of the linking group L described later can be given, among which the alkylene group (the carbon number is preferably 1-12, more preferably 1-6, and more preferably 1-3) is more good. Ar 2 is an aromatic ring, an aromatic hydrocarbon ring (the carbon number is 6-22 is preferred, 6-18 is more preferred, 6-14 is more preferred; 5-membered ring or 6-membered ring or at least any heterocyclic ring is Preferred; as specific examples can be given Ary's example) or aromatic heterocyclic ring (carbon number 2-24 is preferred, 2-18 is more preferred, 2-12 is further preferred; as the heteroatom, oxygen atom, Nitrogen and sulfur atoms are preferred, and the number of heteroatoms is preferably 1 to 12, more preferably 1 to 6, and even more preferably 1 to 3; as a specific example, Aro can be cited Or thioxanthene (10,10-dioxide) is preferred. Ar 2 may have a substituent T within the range of exerting the effect of the present invention.

作為由式(N2)表示之熱鹼產生劑,能夠例示下述化合物,但是本發明並不以此來限定性地解釋。 [化學式15]

Figure 02_image029
As the thermal base generator represented by the formula (N2), the following compounds can be exemplified, but the present invention is not limitedly interpreted by this. [Chemical formula 15]
Figure 02_image029

<<式(N3)>> 特定熱鹼產生劑具有由下述式(N3)表示之結構亦為較佳。 [化學式16]

Figure 02_image031
<<Formula (N3)>> It is also preferable that the specific thermal base generator has a structure represented by the following formula (N3). [Chemical formula 16]
Figure 02_image031

式(N3)中,R4 表示n8價的有機基團。作為有機基團,可舉出後述之取代基T的有機基團(其中,價數以n8解釋)。其中,n8價的烷烴結構的基團(碳數1~18為較佳,1~12為更佳,1~6為進一步較佳)或芳基結構的基團(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R4 亦可以具有取代基T。 R5 及R6 分別獨立地表示氫原子或有機基團。作為有機基團,烴基為較佳,脂肪族烴基(碳數1~18為較佳,1~12為更佳,1~6為進一步較佳)及芳香族烴基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)為更佳,烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為進一步較佳。R5 及R6 該兩者為氫原子為特佳。R5 及R6 為有機基團時,在發揮本發明的效果之範圍內,亦可以具有取代基T。R5 與R6 可以彼此連結而形成環。作為所形成之環,可舉出環Cf的例子。 R7 ~R9 分別獨立地表示烴基。作為R7 ~R9 的烴基,分別獨立地可舉出後述之取代基T中規定之烴基。烴基的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。尤其,R7 ~R9 分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R7 ~R9 的烴基亦可以具有取代基T。R7 ~R9 可以分別連結2個以上而形成環。作為所形成之環,可舉出環Cy,進而具體而言可舉出Cn的例,其中,可舉出哌啶環。 A表示m價的酸陰離子。作為A的具體例,可例示包含*-COO- (羧酸酯陰離子)之基團(*為與其他部位的鍵結鍵),*-COO- 為較佳。A的式量為44以上為較佳,又,300以下為較佳,200以下為更佳。 m為1~4的整數。n7表示1~12的整數。n8及n9表示1~12的整數。其中,n8=n9。 R7 ~R9 中的至少一個具有聚合性基。聚合性基的種類可舉出上述聚合性基Ps的例,其連結的形態可舉出連接基Zp的例子。In the formula (N3), R 4 represents an n8-valent organic group. Examples of the organic group include the organic group of the substituent T described later (wherein, the valence is interpreted as n8). Among them, the n8-valent alkane structure group (the carbon number is preferably 1-18, 1-12 is more preferably, and the 1-6 is more preferable) or the aryl structure group (the carbon number is 6-22 is more Preferably, 6-18 is more preferable, 6-10 is further preferable) is more preferable. R 4 may have a substituent T within the range of exerting the effect of the present invention. R 5 and R 6 each independently represent a hydrogen atom or an organic group. As the organic group, the hydrocarbon group is preferred, the aliphatic hydrocarbon group (the carbon number is preferably from 1 to 18, the more preferred is from 1 to 12, and the more preferred is from 1 to 6) and the aromatic hydrocarbon group (the carbon number is from 6 to 22 is more preferred). Preferably, 6-18 is more preferable, 6-10 is more preferable) is more preferable, and alkyl group (the carbon number is 1-12 is preferable, 1-6 is more preferable, and 1-3 is more preferable) is further Better. It is particularly preferable that both of R 5 and R 6 are hydrogen atoms. When R 5 and R 6 are organic groups, they may have a substituent T within the range where the effects of the present invention are exhibited. R 5 and R 6 may be connected to each other to form a ring. As the ring formed, an example of the ring Cf can be given. R 7 to R 9 each independently represent a hydrocarbon group. As the hydrocarbon group of R 7 to R 9 , the hydrocarbon groups defined in the substituent T described later can be individually exemplified. The carbon number of the hydrocarbon group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. In particular, R 7 to R 9 are each independently an alkyl group (the carbon number is preferably 1 to 12, more preferably 1 to 6, and more preferably 1 to 3). The hydrocarbon group of R 7 to R 9 may have a substituent T within the range of exerting the effect of the present invention. R 7 to R 9 may each connect two or more to form a ring. Examples of the ring formed include ring Cy, and more specifically, examples of Cn. Among them, a piperidine ring can be cited. A represents an m-valent acid anion. Specific examples of A can be exemplified comprise * -COO - (carboxylate anion) of the group (* is a bonding site with the other key), * - COO - are preferred. The formula weight of A is preferably 44 or more, more preferably 300 or less, and more preferably 200 or less. m is an integer of 1-4. n7 represents an integer of 1-12. n8 and n9 represent the integer of 1-12. Among them, n8=n9. At least one of R 7 to R 9 has a polymerizable group. The type of the polymerizable group can be exemplified by the above-mentioned polymerizable group Ps, and the form of the connection can be exemplified by the linking group Zp.

上述式(N3)為下述式(N3-1)、式(N3-2)或式(N3-3)為較佳。 [化學式17]

Figure 02_image033
The above formula (N3) is preferably the following formula (N3-1), formula (N3-2) or formula (N3-3). [Chemical formula 17]
Figure 02_image033

式(N3-1)中,R41 表示有機基團。作為R41 的有機基團,可舉出後述之取代基T的有機基團。其中,烷基(碳數1~18為較佳,1~12為更佳,1~6為進一步較佳)或芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R41 可以經由連接基Zp(包含單鍵)具有取代基T或聚合性基Ps。 R71 、R81 及R91 分別獨立地表示烴基。作為R71 、R81 及R91 的烴基,分別獨立地可舉出後述之取代基T中規定之烴基。烴基的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。尤其,R71 、R81 及R91 分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。 在發揮本發明的效果之範圍內,R71 、R81 及R91 亦可以具有取代基T。R71 、R81 與R91 可以分別連結2個以上而形成環。作為所形成之環,可舉出環Cy,進而具體而言可舉出Cn的例,其中,可舉出哌啶環。 R71 、R81 及R91 中的至少一個具有聚合性基。聚合性基的種類可舉出上述聚合性基Ps的例,其連結的形態可舉出連接基Zp的例子。 A為酸陰離子,較佳的範圍與式(N3)相同。In the formula (N3-1), R 41 represents an organic group. Examples of the organic group of R 41 include organic groups of the substituent T described later. Among them, the alkyl group (the carbon number is preferably 1 to 18, the more preferable is 1 to 12, and the more preferable is 1 to 6) or the aryl group (the carbon number is 6 to 22 is preferable, and the 6 to 18 is more preferable, and 6 ~10 is further preferred) is preferred. In the range where the effect of the present invention is exerted, R 41 may have a substituent T or a polymerizable group Ps via the linking group Zp (including a single bond). R 71 , R 81 and R 91 each independently represent a hydrocarbon group. As the hydrocarbon group of R 71 , R 81, and R 91 , each independently includes the hydrocarbon group specified in the substituent T described later. The carbon number of the hydrocarbon group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. In particular, R 71 , R 81 and R 91 are each independently an alkyl group (the carbon number is preferably from 1 to 12, from 1 to 6 is more preferred, and from 1 to 3 is further preferred). R 71 , R 81, and R 91 may have a substituent T within the range of exerting the effect of the present invention. Two or more of R 71 , R 81 and R 91 may be connected to each other to form a ring. Examples of the ring formed include ring Cy, and more specifically, examples of Cn. Among them, a piperidine ring can be cited. At least one of R 71 , R 81 and R 91 has a polymerizable group. The type of the polymerizable group can be exemplified by the above-mentioned polymerizable group Ps, and the form of the connection can be exemplified by the linking group Zp. A is an acid anion, and the preferred range is the same as that of formula (N3).

式(N3-2)中,R42 表示有機基團。作為R42 的有機基團,可舉出後述之取代基T的有機基團。其中,烷基(碳數1~18為較佳,1~12為更佳,1~6為進一步較佳)或芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R42 可以經由連接基Zp(包含單鍵)具有取代基T或聚合性基Ps。 R82 表示烴基。作為該烴基,可舉出後述之取代基T中規定之烴基。烴基的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。尤其,R82 為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R82 亦可以具有取代基T。 m1為0~10的整數。 R92 表示取代基。作為R92 的取代基,可舉出後述之取代基T的例子。R92 具有2個以上時可以彼此連結而形成環。作為所形成之環,可舉出環Cy的例子。 R82 及R92 以及哌啶環中的至少一個具有聚合性基。聚合性基的種類可舉出上述聚合性基Ps的例,其連結的形態可舉出連接基Zp的例子。 A為酸陰離子,較佳的範圍與式(N3)相同。In the formula (N3-2), R 42 represents an organic group. Examples of the organic group of R 42 include organic groups of the substituent T described later. Among them, the alkyl group (the carbon number is preferably 1 to 18, the more preferable is 1 to 12, and the more preferable is 1 to 6) or the aryl group (the carbon number is 6 to 22 is preferable, and the 6 to 18 is more preferable, and 6 ~10 is further preferred) is preferred. As long as the effect of the present invention is exerted, R 42 may have a substituent T or a polymerizable group Ps via the linking group Zp (including a single bond). R 82 represents a hydrocarbon group. As this hydrocarbon group, the hydrocarbon group specified in the substituent T mentioned later can be mentioned. The carbon number of the hydrocarbon group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. In particular, R 82 is preferably an alkyl group (the carbon number is preferably 1 to 12, more preferably 1 to 6, and more preferably 1 to 3). R 82 may have a substituent T within the range of exerting the effects of the present invention. m1 is an integer of 0-10. R 92 represents a substituent. As the substituent of R 92 , examples of the substituent T described later can be given. When R 92 has two or more, they may be connected to each other to form a ring. As the formed ring, an example of the ring Cy can be given. At least one of R 82 and R 92 and the piperidine ring has a polymerizable group. The type of the polymerizable group can be exemplified by the above-mentioned polymerizable group Ps, and the form of the connection can be exemplified by the linking group Zp. A is an acid anion, and the preferred range is the same as that of formula (N3).

式(N3-3)中,R43 表示有機基團,可舉出連接基L的有機基團的例子。其中,伸烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、(寡)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳;末端的氧原子按照所連結之元素的種類增減即可)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、該等組合之基團為較佳。在發揮本發明的效果之範圍內,R43 可以經由連接基Zp(包含單鍵)具有取代基T或聚合性基Ps。 R73 、R83 、R93 、R74 、R84 及R94 分別獨立地表示烴基。作為烴基,分別獨立地可舉出後述之取代基T中規定之烴基。烴基的碳數為1~18為較佳,1~12為更佳,1~6為進一步較佳。尤其,R73 、R83 、R93 、R74 、R84 及R94 分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。在發揮本發明的效果之範圍內,R73 、R83 、R93 、R74 、R84 及R94 亦可以具有取代基T。 R73 、R83 、R93 可以分別連結2個以上而形成環。作為所形成之環,可舉出環Cy,進而具體而言可舉出Cn的例,其中,可舉出哌啶環。 R74 、R84 、R94 可以分別連結2個以上而形成環。作為所形成之環,可舉出環Cy,進而具體而言可舉出Cn的例,其中,可舉出哌啶環。 R73 、R83 及R93 中的至少一個具有聚合性基。聚合性基的種類可舉出上述聚合性基Ps的例,其連結的形態可舉出連接基Zp的例子。 R74 、R84 及R94 中的至少一個具有聚合性基。聚合性基的種類可舉出上述聚合性基Ps的例,其連結的形態可舉出連接基Zp的例子。 A為酸陰離子,較佳的範圍與式(N3)相同。In the formula (N3-3), R 43 represents an organic group, and examples of the organic group of the linking group L can be given. Among them, alkylene (the carbon number is preferably 1-24, more preferably 1-12, and even more preferably 1-6), (oligo)alkyleneoxy (the carbon of the alkylene in one structural unit The number is preferably from 1 to 12, more preferably from 1 to 6, and more preferably from 1 to 3; the number of repetitions is preferably from 1 to 50, more preferably from 1 to 40, and more preferably from 1 to 30; The oxygen atom of is increased or decreased according to the type of element to be connected), aryl group (carbon number 6-22 is preferred, 6-18 is more preferred, 6-10 is further preferred), the base of these combinations Group is better. As long as the effect of the present invention is exerted, R 43 may have a substituent T or a polymerizable group Ps via the linking group Zp (including a single bond). R 73 , R 83 , R 93 , R 74 , R 84 and R 94 each independently represent a hydrocarbon group. As the hydrocarbyl group, the hydrocarbyl group specified in the substituent T described later can be individually exemplified. The carbon number of the hydrocarbon group is preferably 1-18, more preferably 1-12, and still more preferably 1-6. In particular, R 73 , R 83 , R 93 , R 74 , R 84 and R 94 are each independently an alkyl group (the carbon number is preferably from 1 to 12, from 1 to 6 is more preferred, and from 1 to 3 is further preferred) For better. R 73 , R 83 , R 93 , R 74 , R 84, and R 94 may have a substituent T within the range of exerting the effects of the present invention. Two or more of R 73 , R 83 , and R 93 may each be connected to form a ring. Examples of the ring formed include ring Cy, and more specifically, examples of Cn. Among them, a piperidine ring can be cited. Two or more of R 74 , R 84 , and R 94 may be connected to each other to form a ring. Examples of the ring formed include ring Cy, and more specifically, examples of Cn. Among them, a piperidine ring can be cited. At least one of R 73 , R 83 and R 93 has a polymerizable group. The type of the polymerizable group can be exemplified by the above-mentioned polymerizable group Ps, and the form of the connection can be exemplified by the linking group Zp. At least one of R 74 , R 84 and R 94 has a polymerizable group. The type of the polymerizable group can be exemplified by the above-mentioned polymerizable group Ps, and the form of the connection can be exemplified by the linking group Zp. A is an acid anion, and the preferred range is the same as that of formula (N3).

作為由式(N3)表示之熱鹼產生劑,能夠例示下述化合物,但是本發明並不以此來限定性地解釋。 [化學式18]

Figure 02_image035
As the thermal base generator represented by the formula (N3), the following compounds can be exemplified, but the present invention is not limitedly interpreted by this. [Chemical formula 18]
Figure 02_image035

式(N1)~(N3)中,式(N1)或式(N2)之熱鹼產生劑為更佳。式(N3)中所包含之鹽形態的熱鹼產生劑中,鹼性銨離子能夠促進聚合物前驅物的環化。從沒有該種作用而進一步提高保存穩定性之觀點考慮,不採用鹽的形態的特定熱鹼產生劑為較佳。Among formulas (N1) to (N3), the hot alkali generator of formula (N1) or formula (N2) is more preferred. In the salt form of the thermal base generator contained in the formula (N3), basic ammonium ions can promote the cyclization of the polymer precursor. From the viewpoint of further improving storage stability without this effect, a specific thermal base generator that does not adopt a salt form is preferable.

特定熱鹼產生劑之製造方法為常規方法即可。例如,具有由式(N1)表示之結構之熱鹼產生劑能夠藉由對所對應之內酯或環狀酸酐加成胺來合成。具有由式(N2)表示之結構之熱鹼產生劑能夠藉由使酸氯化物或酸酐與所對應之胺進行反應來合成。具有由式(N3)表示之結構之熱鹼產生劑能夠藉由國際公開公報第WO2015/199219號小冊子中所記載之方法來合成。The manufacturing method of the specific hot alkali generator may be a conventional method. For example, a thermal base generator having a structure represented by formula (N1) can be synthesized by adding an amine to the corresponding lactone or cyclic anhydride. The thermal base generator having the structure represented by formula (N2) can be synthesized by reacting acid chloride or acid anhydride with the corresponding amine. The thermal base generator having the structure represented by formula (N3) can be synthesized by the method described in the pamphlet of International Publication No. WO2015/199219.

特定熱鹼產生劑中,在其氮原子上質子化之部分的共軛酸的pKa(以下,有時簡稱為“特定熱鹼產生劑的共軛酸的pKa”)為4以下為較佳,2以下為更佳,1以下為進一步較佳,0.4以下為更進一步較佳。作為上述pKa的下限值,實際上為-5以上。藉由將特定熱鹼產生劑的共軛酸的pKa設為上述上限值以下,在不會阻礙聚合物前驅物的環化反應之方面為較佳。 本說明書中所述的pKa是指,考慮到從氧釋放氫離子之解離反應,藉由負的常用對數pKa表示該平衡常數Ka。是指pKa越小酸越強。除非另有說明,則將pKa設為基於ACD/ChemSketch的計算值。或者,可以參閱日本化學會編“改訂5版 化學便覽 基礎篇”中所記載之值。 關於特定熱鹼產生劑的共軛酸的pKa,基於加熱的相同pKa的上升(ΔpKa)(加熱前後的pKa的差)為2以上為較佳,5以上為更佳,8以上為進一步較佳。In the specific thermal base generator, it is preferable that the pKa of the conjugate acid of the part protonated on its nitrogen atom (hereinafter sometimes referred to as "pKa of the conjugate acid of the specific thermal base generator") is 4 or less. 2 or less is more preferable, 1 or less is more preferable, 0.4 or less is even more preferable. The lower limit of the pKa is actually -5 or more. By setting the pKa of the conjugate acid of the specific thermal base generator to be equal to or lower than the above upper limit, it is preferable in that it does not hinder the cyclization reaction of the polymer precursor. The pKa mentioned in this specification means that the equilibrium constant Ka is expressed by the negative common logarithm pKa in consideration of the dissociation reaction of hydrogen ion release from oxygen. It means that the smaller the pKa, the stronger the acid. Unless otherwise specified, the pKa is set to a calculated value based on ACD/ChemSketch. Alternatively, you can refer to the values recorded in the "Revised 5th Edition Chemistry Handbook Basics" edited by the Chemical Society of Japan. Regarding the pKa of the conjugate acid of the specific thermal base generator, the rise (ΔpKa) of the same pKa based on heating (the difference in pKa before and after heating) is preferably 2 or more, more preferably 5 or more, and even more preferably 8 or more .

以下,關於特定熱鹼產生劑的例示化合物的一部分,舉出其共軛酸的pKa。Hereinafter, with regard to a part of the exemplified compounds of the specific thermal base generator, the pKa of its conjugate acid is given.

[表1] No. pKa Ba-1 9.07 Ba-2 7.68 Ba-3 6.83 Ba-4 9.53 Ba-5 9.02 Ba-6 9.77 Ba-7 10 Ba-8 11.13 Ba-9 7.72 Ba-10 10.18 Ba-11 7.22 Ba-12 10.77 Ba-13 3.74 Bb-1 7.21 Bb-2 6.48 Bb-3 7.69 Bb-4 9.63 Bb-5 9.61 Bb-6 7.64 Bb-7 3.63 Bc-1 9.67 Bc-2 8.88 Bc-3 8.01 Bc-4 9.77 Bc-5 8.82 Bc-6 7.08 [Table 1] No. pKa Ba-1 9.07 Ba-2 7.68 Ba-3 6.83 Ba-4 9.53 Ba-5 9.02 Ba-6 9.77 Ba-7 10 Ba-8 11.13 Ba-9 7.72 Ba-10 10.18 Ba-11 7.22 Ba-12 10.77 Ba-13 3.74 Bb-1 7.21 Bb-2 6.48 Bb-3 7.69 Bb-4 9.63 Bb-5 9.61 Bb-6 7.64 Bb-7 3.63 Bc-1 9.67 Bc-2 8.88 Bc-3 8.01 Bc-4 9.77 Bc-5 8.82 Bc-6 7.08

特定熱鹼產生劑的分子量並無特別限定,但是2,000以下為較佳,1,000以下為更佳,500以下為進一步較佳。為了抑制所產生之鹼的揮發,考慮將鹼或熱鹼產生劑設為高分子量者。然而,高分子的添加劑有時產生組成物中的溶解性或與聚合物前驅物的相溶性的問題。與此相對,本發明之特定熱鹼產生劑能夠在體系內經由聚合性基使鹼固定化,因此無需將熱鹼產生劑設為高分子量者,在能夠解決溶解性的問題方面較佳。又,藉由設為低分子量的熱鹼產生劑,在能夠增加每個摻合量的所產生之鹼的量(莫耳數)之方面亦較佳。特定熱鹼產生劑的分子量的下限值並無特別限制,但是實際上為80以上。The molecular weight of the specific thermal base generator is not particularly limited, but is preferably 2,000 or less, more preferably 1,000 or less, and more preferably 500 or less. In order to suppress the volatilization of the alkali produced, it is considered that the alkali or the thermal alkali generator is a high molecular weight one. However, polymer additives sometimes cause problems with solubility in the composition or compatibility with polymer precursors. In contrast, the specific thermal base generator of the present invention can immobilize a base via a polymerizable group in the system. Therefore, there is no need to make the thermal base generator a high molecular weight, and it is preferable in that it can solve the problem of solubility. In addition, it is also preferable in terms of being able to increase the amount (number of moles) of alkali generated per blending amount by using a low molecular weight thermal alkali generator. The lower limit of the molecular weight of the specific thermal base generator is not particularly limited, but is actually 80 or more.

特定熱鹼產生劑在感光性樹脂組成物中為0.0025質量%以上為較佳,0.01質量%以上為更佳,0.02質量%以上為進一步較佳。作為上限,例如為20質量%以下為較佳,10質量%以下為更佳,5質量%以下為進一步較佳,亦可以為3質量%以下。 相對於聚合物前驅物100質量份,0.01質量份以上為較佳,0.05質量份以上為更佳,0.1質量份以上為進一步較佳。作為上限,例如為20質量份以下為較佳,10質量份以下為更佳,7.5質量份以下為進一步較佳,亦可以為5.0質量份以下。 藉由將特定熱鹼產生劑的含量設為上述下限值以上,在能夠確保良好的保存穩定性之方面為較佳。另一方面,藉由設為上述上限值以下,在能夠確保金屬的耐腐蝕性之方面為較佳。 此外,如上所述,特定熱鹼產生劑中所產生之鹼具有聚合性基而高分子化,因此可有效地抑制其揮發。藉此,鹼更容易存在於組成物中,並能夠期待更有效的環化促進作用。作為結果,能夠抑制熱鹼產生劑的添加量,能夠降低添加其而引起之副作用,並能夠提高感光性樹脂組成物的物性或其硬化膜的性能。 特定熱鹼產生劑可以使用1種亦可以使用複數種。當使用複數種時,其合計量成為上述中規定的範圍。本發明的組成物包含2種以上的鹼產生劑之情況下,較佳為組成物中所包含之80質量%以上(進而90質量%以上、尤其95質量%以上)為特定熱鹼產生劑為較佳。 另外,鹼經由聚合性基被固定之配位化合物並無特別限定。例如可舉出所產生之鹼彼此鍵結或聚合之樣態。又,亦可以與聚合性化合物聚合。另外,聚合物前驅物具有聚合性基之情況下,亦可以與該聚合性基聚合。又,亦可以為複雜地進行該等聚合之樣態。The specific thermal base generator is preferably 0.0025% by mass or more in the photosensitive resin composition, more preferably 0.01% by mass or more, and even more preferably 0.02% by mass or more. As an upper limit, for example, 20 mass% or less is preferable, 10 mass% or less is more preferable, 5 mass% or less is more preferable, and it may be 3 mass% or less. With respect to 100 parts by mass of the polymer precursor, 0.01 parts by mass or more is preferable, 0.05 parts by mass or more is more preferable, and 0.1 parts by mass or more is more preferable. As an upper limit, for example, 20 parts by mass or less is preferable, 10 parts by mass or less is more preferable, 7.5 parts by mass or less is more preferable, and it may be 5.0 parts by mass or less. By setting the content of the specific thermal base generator to be equal to or greater than the above lower limit, it is preferable to ensure good storage stability. On the other hand, by setting it as the upper limit or less, it is preferable to ensure the corrosion resistance of a metal. In addition, as described above, the base produced in the specific thermal base generator has a polymerizable group and is polymerized, so that volatilization can be effectively suppressed. Thereby, the base is more likely to be present in the composition, and a more effective cyclization promotion effect can be expected. As a result, the addition amount of the thermal base generator can be suppressed, the side effects caused by adding it can be reduced, and the physical properties of the photosensitive resin composition or the performance of the cured film can be improved. The specific thermal alkali generator may be used singly or in plural. When multiple types are used, the total amount becomes the range specified above. When the composition of the present invention contains two or more kinds of alkali generators, it is preferable that 80% by mass or more (and more than 90% by mass, especially 95% by mass or more) contained in the composition is the specific thermal alkali generator. Better. In addition, the coordination compound in which the base is fixed via the polymerizable group is not particularly limited. For example, a state in which the generated bases are bonded to each other or polymerized can be cited. In addition, it may be polymerized with a polymerizable compound. In addition, when the polymer precursor has a polymerizable group, it may be polymerized with the polymerizable group. In addition, it can also be a state where these aggregations are carried out in a complicated manner.

作為取代基T,可舉出烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、芳基烷基(碳數7~21為較佳,7~15為更佳,7~11為進一步較佳)、烯基(碳數2~24為較佳,2~12為更佳,2~6為進一步較佳)、炔基(碳數2~24為較佳,2~12為更佳,2~6為進一步較佳)、有機胺基(-NRN 2 )(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、芳基烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、烷氧基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳氧基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、醯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、醯氧基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳醯基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、芳醯基氧基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、胺甲醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、胺磺醯基(碳數0~12為較佳,0~6為更佳,0~3為進一步較佳)、烷基磺醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳基磺醯基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜環基(包含氧原子、氮原子及硫原子中的至少一個;碳數1~30為較佳,2~24為更佳,3~18為進一步較佳;包含5員環或6員環為較佳)、(甲基)丙烯醯基、(甲基)丙烯醯氧基、亞胺基(=NRN )、亞烷基(=C(RN2 )、羧基等的有機基團。 又,取代基T中包含羥基、胺基(NH2 )、硫烷基、磺酸基、磺醯氧基、膦醯基、膦醯氧基、鹵素原子(例如氟原子、氯原子、溴原子、碘原子)、氧代基(=O)等由無機元素構成之基團。 RN 為烷基、烯基、芳基、芳基烷基或雜環基,具體而言,選自後述之取代基T中所記載之烷基等。 各取代基中所包含之烷基部位及烯基部位可以為鏈狀亦可以為環狀,可以為直鏈亦可以為支鏈。上述取代基T為能夠得到取代基之基團之情況下,還可以具有取代基T。例如亦可以成為在烷基上取代有羥基之羥基烷基。As the substituent T, an alkyl group (1 to 24 carbon atoms is preferable, 1 to 12 is more preferable, and 1 to 6 is even more preferable), arylalkyl groups (7 to 21 carbon atoms are preferable, 7-15 is more preferred, 7-11 is further preferred), alkenyl (carbon number 2-24 is preferred, 2-12 is more preferred, 2-6 is further preferred), alkynyl (carbon number is 2 ~24 is preferred, 2~12 is more preferred, 2~6 is further preferred), organic amine group (-NR N 2 ) (carbon number 1~24 is preferred, 1~12 is more preferred, 1~ 6 is more preferred), aryl (carbon number 6-22 is preferred, 6-18 is more preferred, 6-10 is further preferred), arylalkyl (carbon number 7-23 is preferred, 7 ~19 is more preferable, 7-11 is more preferable), alkoxy (carbon number 1-12 is preferable, 1-6 is more preferable, 1-3 is more preferable), aryloxy (carbon number 6-22 is preferable, 6-18 is more preferable, 6-10 is more preferable), acyl group (the carbon number is 2-12 is preferable, 2-6 is more preferable, 2-3 is more preferable) , Acyloxy group (the carbon number is preferably 2-12, 2-6 is more preferable, and 2-3 is more preferable), aryloxy group (the carbon number is 7-23 is preferable, and 7-19 is more preferable, 7-11 is more preferred), aryloxy (carbon number 7-23 is preferred, 7-19 is more preferred, 7-11 is more preferred), carbamethanyl (carbon number 1-12 Is preferred, 1 to 6 is more preferred, and 1 to 3 is further preferred), sulfamoyl (the carbon number is 0 to 12 is preferred, 0 to 6 is more preferred, and 0 to 3 is more preferred), Alkylsulfonyl (1 to 12 carbons is preferred, 1 to 6 is more preferred, and 1 to 3 is more preferred), arylsulfonyl (6 to 22 is preferred, 6 to 18 is More preferably, 6-10 is further preferred), heterocyclic group (containing at least one of oxygen atom, nitrogen atom and sulfur atom; carbon number 1-30 is preferred, 2-24 is more preferred, 3-18 is More preferably; a 5-membered ring or a 6-membered ring is preferred), (meth)acryloyl group, (meth)acryloyloxy group, imino group (=NR N ), alkylene group (=C( R N ) 2 ), carboxyl and other organic groups. In addition, the substituent T includes a hydroxyl group, an amino group (NH 2 ), a sulfanyl group, a sulfonic acid group, a sulfonyloxy group, a phosphinyl group, a phosphinyl group, and a halogen atom (e.g., fluorine atom, chlorine atom, bromine atom , Iodine atom), oxo group (=O) and other groups composed of inorganic elements. R N is an alkyl group, an alkenyl group, an aryl group, an arylalkyl group, or a heterocyclic group, and is specifically selected from the alkyl groups described in the substituent T described later, and the like. The alkyl part and the alkenyl part contained in each substituent may be chain-like or cyclic, and may be linear or branched. When the above-mentioned substituent T is a group capable of obtaining a substituent, it may further have a substituent T. For example, it may be a hydroxyalkyl group in which a hydroxyl group is substituted on the alkyl group.

作為連接基L,可舉出伸烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、伸烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、伸炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、(寡)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳;伸烷基與氧基的化合物中的方向無關;末端的氧原子亦可以依據所連結之元素增減)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、氧原子、硫原子、磺醯基、羰基、硫羰基、-NH-、-NRN -及該等組合之連接基。伸烷基、伸烯基、伸烷氧基亦可以具有上述取代基T。例如伸烷基亦可以具有羥基。 連接基L的連結鏈長度為1~24為較佳,1~12為更佳,1~6為進一步較佳。連結鏈長度係指位於與連結有關之原子團中最短的路徑之原子數。例如為-CH2 -(C=O)-O-時成為3。 另外,以連接基L規定之伸烷基、伸烯基、(寡)伸烷氧基可以為鏈狀亦可以為環狀,可以為直鏈亦可以為支鏈。 作為構成連接基L之原子,包含碳原子及氫原子、依據需要包含雜原子(選自氧原子、氮原子、硫原子中之至少1種等)為較佳。連接基中的碳原子的數量為1~24個為較佳,1~12個為更佳,1~6個為進一步較佳。氫原子按照碳原子等的數量來確定即可。雜原子的數量為氧原子、氮原子、硫原子分別獨立地為0~12個為較佳,0~6個為更佳,0~3個為進一步較佳。As the linking group L, an alkylene group (the carbon number is preferably 1 to 24, 1 to 12 is more preferable, and 1 to 6 is even more preferable), and an alkenylene group (the carbon number is preferably 2 to 12, 2 to 6 are more preferable, 2 to 3 are more preferable), alkynylene (the carbon number is 2 to 12 is preferable, 2 to 6 is more preferable, and 2 to 3 is more preferable), (oligo) alkane Oxy group (the number of carbon atoms of the alkylene group in one structural unit is preferably 1-12, more preferably 1-6, more preferably 1-3; repeating number is preferably 1-50, 1~ 40 is more preferred, and 1-30 is further preferred; the direction of the alkylene group and the oxy group compound has nothing to do; the terminal oxygen atom can also increase or decrease according to the element connected), the aryl group (carbon number 6-22 Is preferred, 6-18 is more preferred, 6-10 is further preferred), oxygen atom, sulfur atom, sulfonyl group, carbonyl group, thiocarbonyl group, -NH-, -NR N -and linking groups of these combinations . The alkylene group, alkenylene group, and alkoxy group may also have the aforementioned substituent T. For example, the alkylene group may have a hydroxyl group. The link chain length of the linking group L is preferably 1-24, more preferably 1-12, and still more preferably 1-6. The length of the link chain refers to the number of atoms in the shortest path of the atom group related to the link. For example, when it is -CH 2 -(C=O)-O-, it becomes 3. In addition, the alkylene group, alkenylene group, and (oligo)alkylene group defined by the linking group L may be chain-like or cyclic, and may be linear or branched. As atoms constituting the linking group L, it is preferable to include a carbon atom and a hydrogen atom, and if necessary, a hetero atom (at least one selected from an oxygen atom, a nitrogen atom, and a sulfur atom). The number of carbon atoms in the linking group is preferably 1-24, more preferably 1-12, and still more preferably 1-6. The hydrogen atoms may be determined according to the number of carbon atoms and the like. The number of heteroatoms is preferably 0-12 independently of oxygen atom, nitrogen atom, and sulfur atom, more preferably 0-6, and still more preferably 0-3.

<聚合物前驅物> 本發明的感光性樹脂組成物包含選自聚醯亞胺前驅物及聚苯并㗁唑前驅物中之聚合物前驅物。作為聚合物前驅物,聚醯亞胺前驅物為更佳,包含由下述式(1)表示之構成單元之聚醯亞胺前驅物為進一步較佳。<Polymer precursors> The photosensitive resin composition of the present invention includes a polymer precursor selected from polyimide precursors and polybenzoxazole precursors. As the polymer precursor, a polyimide precursor is more preferable, and a polyimine precursor containing a structural unit represented by the following formula (1) is more preferable.

<聚醯亞胺前驅物> 作為聚醯亞胺前驅物,包含由下述式(1)表示之構成單元為較佳。藉由設為該種結構,可得到膜強度更優異之組成物。 [化學式19]

Figure 02_image037
式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價的有機基團,R115 表示4價的有機基團,R113 及R114 分別獨立地表示氫原子或1價的有機基團。<Polyimine precursor> As a polyimine precursor, it is preferable to contain the structural unit represented by following formula (1). By using this structure, a composition with more excellent film strength can be obtained. [Chemical formula 19]
Figure 02_image037
In formula (1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent hydrogen Atom or monovalent organic group.

A1 及A2 分別獨立地係氧原子或NH,氧原子為較佳。A 1 and A 2 are each independently an oxygen atom or NH, and an oxygen atom is preferred.

<<R111 >> R111 表示2價的有機基團。作為2價的有機基團,例示直鏈或支鏈的脂肪族基、環狀脂肪族基及芳香族基、雜芳香族基或包含該等組合之基團,碳數2~20的直鏈脂肪族基、碳數3~20的支鏈脂肪族基、碳數3~20的環狀脂肪族基、碳數6~20的芳香族基或包括該等的組合之基團為較佳,碳數6~20的芳香族基為更佳。 作為芳香族基的例,可舉出下述AR-1~AR-10。<<R 111 >> R 111 represents a divalent organic group. Examples of divalent organic groups include linear or branched aliphatic groups, cyclic aliphatic groups and aromatic groups, heteroaromatic groups, or groups containing these combinations, and linear chain having 2 to 20 carbon atoms An aliphatic group, a branched aliphatic group having 3 to 20 carbons, a cyclic aliphatic group having 3 to 20 carbons, an aromatic group having 6 to 20 carbons, or a group including a combination of these are preferred. The aromatic group having 6 to 20 carbon atoms is more preferable. As an example of an aromatic group, the following AR-1-AR-10 are mentioned.

[化學式20]

Figure 02_image039
[Chemical formula 20]
Figure 02_image039

式中,A係單鍵或選自可以經氟原子取代之碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2 -、-NHCO-以及該等的組合中之基團為較佳,單鍵或選自可以經氟原子取代之碳數1~3的伸烷基、-O-、-C(=O)-、-S-及-SO2 -中之基團為更佳,選自包括-CH2 -、-O-、-S-、-SO2 -、-C(CF32 -及-C(CH32 -之組中之2價基團為進一步較佳。In the formula, A is a single bond or is selected from aliphatic hydrocarbon groups with 1 to 10 carbons which can be substituted by fluorine atoms, -O-, -C(=O)-, -S-, -S(=O) 2- , -NHCO- and the combination of these groups are preferred, single bonds or selected from alkylene groups with 1 to 3 carbons which may be substituted by fluorine atoms, -O-, -C(=O)-, The groups in -S- and -SO 2 -are more preferably selected from -CH 2 -, -O-, -S-, -SO 2 -, -C(CF 3 ) 2 -and -C(CH 3) 2 - group of the divalent group is further preferred.

R111 由二胺衍生為較佳。作為在聚醯亞胺前驅物的製造中所使用之二胺,可舉出直鏈或支鏈脂肪族、環狀脂肪族或芳香族二胺等。二胺可以僅使用1種,亦可以使用2種以上。 具體而言,二胺包含碳數2~20的直鏈脂肪族基、碳數3~20的支鏈或環狀脂肪族基、碳數6~20的芳香族基或包含該等組合之基團為較佳,包含碳數6~20的芳香族基之二胺為更佳。R 111 is preferably derived from diamine. Examples of the diamine used in the production of the polyimide precursor include linear or branched aliphatic, cyclic aliphatic, or aromatic diamines. Only one type of diamine may be used, or two or more types may be used. Specifically, the diamine includes a linear aliphatic group having 2 to 20 carbons, a branched or cyclic aliphatic group having 3 to 20 carbons, an aromatic group having 6 to 20 carbons, or a group containing these combinations Groups are preferred, and diamines containing aromatic groups with 6 to 20 carbon atoms are more preferred.

作為二胺,具體而言,能夠參閱國際公開公報第WO2015/199220號小冊子的0032段中所記載之化合物,引用其而編入本說明書中。As the diamine, specifically, the compound described in paragraph 0032 of the pamphlet of International Publication No. WO2015/199220 can be referred to and incorporated into this specification by quoting.

從所得到之硬化膜的柔軟性的觀點考慮,R111 由-Ar0 -L0 -Ar0 -表示為較佳。但是,Ar0 分別獨立地為芳香族基,芳香族烴基(碳數6~22為較佳,6~18為更佳,6~10為特佳)為較佳,伸苯基為更佳。L0 表示單鍵、可以經氟原子取代之碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2 -、-NHCO-以及選自該等的組合之基團。較佳的範圍的定義與上述A相同。From the viewpoint of the flexibility of the cured film obtained, R 111 is preferably represented by -Ar 0 -L 0 -Ar 0 -. However, Ar 0 is each independently an aromatic group, and an aromatic hydrocarbon group (carbon number 6-22 is preferred, 6-18 is more preferred, 6-10 is particularly preferred) is preferred, and phenylene is more preferred. L 0 represents a single bond, an aliphatic hydrocarbon group of 1 to 10 carbons that can be substituted by a fluorine atom, -O-, -C(=O)-, -S-, -S(=O) 2 -, -NHCO- And a group selected from the combination of these. The definition of the preferred range is the same as the above A.

從i射線透射率的觀點考慮,R111 係由下述式(51)或式(61)表示之2價的有機基團為較佳。尤其,從i射線透射率、易獲得的觀點考慮,由式(61)表示之2價的有機基團為更佳。 [化學式21]

Figure 02_image041
R50 ~R57 分別獨立地為氫原子、氟原子或1價的有機基團,R50 ~R57 中的至少一個為氟原子、甲基、氟甲基、二氟甲基或三氟甲基。 作為R50 ~R57 的1價的有機基團時,可舉出碳數1~10(較佳為碳數1~6)的未經取代的烷基、碳數1~10(較佳為碳數1~6)的氟化烷基等。 [化學式22]
Figure 02_image043
R58 及R59 分別獨立地為氟原子、氟甲基、二氟甲基或三氟甲基。 作為賦予式(51)或(61)的結構之二胺化合物,可舉出二甲基-4,4’-二胺基聯苯、2,2’-雙(三氟甲基)-4,4’-二胺基聯苯、2,2’-雙(氟)-4,4’-二胺基聯苯、4,4’-二胺基八氟聯苯等。可以使用該等中的一種,亦可以組合使用2種以上From the viewpoint of i-ray transmittance, R 111 is preferably a divalent organic group represented by the following formula (51) or formula (61). In particular, from the viewpoint of i-ray transmittance and easy availability, the divalent organic group represented by the formula (61) is more preferable. [Chemical formula 21]
Figure 02_image041
R 50 to R 57 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 50 to R 57 is a fluorine atom, methyl, fluoromethyl, difluoromethyl or trifluoromethyl base. As the monovalent organic group of R 50 to R 57 , an unsubstituted alkyl group having 1 to 10 carbons (preferably 1 to 6 carbons), and 1 to 10 carbons (preferably Carbon 1-6) fluorinated alkyl group, etc. [Chemical formula 22]
Figure 02_image043
R 58 and R 59 are each independently a fluorine atom, fluoromethyl, difluoromethyl, or trifluoromethyl. As the diamine compound imparted to the structure of the formula (51) or (61), dimethyl-4,4'-diaminobiphenyl, 2,2'-bis(trifluoromethyl)-4, 4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, etc. One of these can be used, or two or more of them can be used in combination

<<R115 >> 式(1)中的R115 表示4價的有機基團。作為4價的有機基團,包含芳香環之4價的有機基團為較佳,由下述式(5)或式(6)表示之基團為更佳。 [化學式23]

Figure 02_image045
R112 的定義與A相同,較佳範圍亦相同。<< R 115 >> formula R 115 (1) represents a tetravalent organic group. As the tetravalent organic group, a tetravalent organic group containing an aromatic ring is preferable, and a group represented by the following formula (5) or formula (6) is more preferable. [Chemical formula 23]
Figure 02_image045
The definition of R 112 is the same as that of A, and the preferred range is also the same.

關於由式(1)中的R115 表示之4價的有機基團,具體而言,可舉出從四羧酸二酐去除酸二酐基之後殘存之四羧酸殘基等。四羧酸二酐可以僅使用1種,亦可以使用2種以上。四羧酸二酐係由下述式(7)表示之化合物為較佳。 [化學式24]

Figure 02_image047
R115 表示4價的有機基團。R115 的定義與式(1)的R115 相同。Regarding the tetravalent organic group represented by R 115 in the formula (1), specifically, the tetracarboxylic acid residue remaining after removing the acid dianhydride group from the tetracarboxylic dianhydride and the like can be mentioned. Only one type of tetracarboxylic dianhydride may be used, or two or more types may be used. Tetracarboxylic dianhydride is preferably a compound represented by the following formula (7). [Chemical formula 24]
Figure 02_image047
R 115 represents a tetravalent organic group. R 115 is the same as defined in formula (1) is R 115.

作為四羧酸二酐的具體例,可例示選自均苯四甲酸、均苯四甲酸二酐(PMDA)、3,3’,4,4’-聯苯四羧酸二酐、3,3’,4,4’-二苯硫醚四羧酸二酐、3,3’,4,4’-二苯基碸四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、3,3’,4,4’-二苯基甲烷四羧酸二酐、2,2’,3,3’-二苯基甲烷四羧酸二酐、2,3,3’,4’-聯苯四羧酸二酐、2,3,3’,4’-二苯甲酮四羧酸二酐、4,4’-氧代二鄰苯二甲酸二酐、2,3,6,7-萘四羧酸二酐、1,4,5,7-萘四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、1,3-二苯基六氟丙烷-3,3,4,4-四羧酸二酐、1,4,5,6-萘四羧酸二酐、2,2’,3,3’-二苯基四羧酸二酐、3,4,9,10-苝四羧酸二酐、1,2,4,5-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、1,8,9,10-菲四羧酸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,3,4-苯四羧酸二酐及該等的碳數1~6的烷基衍生物及碳數1~6的烷氧基衍生物中之至少一種。Specific examples of tetracarboxylic dianhydride include those selected from pyromellitic acid, pyromellitic dianhydride (PMDA), 3,3',4,4'-biphenyltetracarboxylic dianhydride, 3,3 ',4,4'-Diphenylsulfide tetracarboxylic dianhydride, 3,3',4,4'-Diphenylsulfide tetracarboxylic dianhydride, 3,3',4,4'-Diphenylmethyl Ketonetetracarboxylic dianhydride, 3,3',4,4'-diphenylmethanetetracarboxylic dianhydride, 2,2',3,3'-diphenylmethanetetracarboxylic dianhydride, 2,3 ,3',4'-Biphenyltetracarboxylic dianhydride, 2,3,3',4'-benzophenonetetracarboxylic dianhydride, 4,4'-oxodiphthalic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,4,5,7-naphthalenetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2 ,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane- 3,3,4,4-tetracarboxylic dianhydride, 1,4,5,6-naphthalenetetracarboxylic dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 3, 4,9,10-perylenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,8,9,10 -Phenanthrene tetracarboxylic dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1, At least one of 2,3,4-benzenetetracarboxylic dianhydride and alkyl derivatives having 1 to 6 carbon atoms and alkoxy derivatives having 1 to 6 carbon atoms.

<<R113 及R114 >> 式(1)中,R113 及R114 分別獨立地表示氫原子或1價的有機基團。R113 及R114 中的至少一個係含有自由基聚合性基團之重複單元為較佳,兩者均含有自由基聚合性基團為更佳。作為自由基聚合性基團,為藉由自由基的作用,能夠進行交聯反應之基團,且作為較佳的例,可舉出具有乙烯性不飽和鍵之基團。 作為具有乙烯性不飽和鍵之基團,可舉出乙烯基、烯丙基、(甲基)丙烯醯基、由下述式(III)表示之基團等。<<R 113 and R 114 >> In formula (1), R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group. At least one of R 113 and R 114 is preferably a repeating unit containing a radical polymerizable group, and it is more preferred that both of them contain a radical polymerizable group. The radical polymerizable group is a group capable of undergoing a crosslinking reaction by the action of a radical, and a preferable example includes a group having an ethylenically unsaturated bond. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, a (meth)acryloyl group, a group represented by the following formula (III), and the like.

[化學式25]

Figure 02_image049
[Chemical formula 25]
Figure 02_image049

式(III)中,R200 表示氫原子或甲基,甲基為更佳。 式(III)中,R201 表示碳數2~12的伸烷基、-CH2 CH(OH)CH2 -或碳數4~30的(聚)氧化伸烷基(作為伸烷基,碳數1~12為較佳,1~6為更佳,1~3為特佳;重複數係1~12為較佳,1~6為更佳,1~3為特佳)。此外,(聚)氧化伸烷基是指氧化伸烷基或聚氧化伸烷基。 較佳的R201 的例中,可舉出伸乙基、伸丙基、三亞甲基、四亞甲基、1,2-丁二基、1,3-丁二基、五亞甲基、六亞甲基、八亞甲基、十二亞甲基、-CH2 CH(OH)CH2 -,伸乙基、伸丙基、三亞甲基、-CH2 CH(OH)CH2 -為更佳。 特佳為R200 係甲基,R201 係伸乙基。In the formula (III), R 200 represents a hydrogen atom or a methyl group, and a methyl group is more preferred. In formula (III), R 201 represents an alkylene having 2 to 12 carbons, -CH 2 CH(OH)CH 2 -or a (poly)oxyalkylene having 4 to 30 carbons (as an alkylene, carbon The number is preferably from 1 to 12, more preferably from 1 to 6, and particularly preferably from 1 to 3; the repeating number is preferably from 1 to 12, more preferably from 1 to 6 and particularly preferably from 1 to 3). In addition, (poly)alkylene oxide means alkylene oxide or polyalkylene oxide. Preferred examples of R 201 include ethylene, propylene, trimethylene, tetramethylene, 1,2-butanediyl, 1,3-butanediyl, pentamethylene, Hexamethylene, octamethylene, dodecamethylene, -CH 2 CH(OH)CH 2 -, ethylene, propylene, trimethylene, -CH 2 CH(OH)CH 2 -are Better. Particularly preferably, R 200 is a methyl group, and R 201 is an ethylene group.

作為本發明中的聚醯亞胺前驅物的較佳的實施形態,作為R113 或R114 的1價的有機基團可舉出具有1、2或3個酸基,較佳為具有1個酸基之脂肪族基、芳香族基及芳烷基等。具體而言,可舉出具有酸基之碳數6~20的芳香族基、具有酸基之碳數7~25的芳基烷基。更具體而言,可舉出具有酸基之苯基及具有酸基之苄基。酸基為羥基為較佳。亦即,R113 或R114 係具有羥基之基團為較佳。 作為由R113 或R114 表示之1價的有機基團,可較佳地使用提高顯影液的溶解度之取代基。 從對水性顯影液的溶解性的觀點考慮,R113 或R114 係氫原子、2-羥基芐基、3-羥基芐基及4-羥基芐基為更佳。As a preferable embodiment of the polyimide precursor in the present invention, the monovalent organic group of R 113 or R 114 may include 1, 2 or 3 acid groups, preferably one The aliphatic group, aromatic group and aralkyl group of acid group. Specifically, an aromatic group having 6 to 20 carbon atoms having an acid group, and an arylalkyl group having 7 to 25 carbon atoms having an acid group can be mentioned. More specifically, a phenyl group having an acid group and a benzyl group having an acid group can be mentioned. The acid group is preferably a hydroxyl group. That is, R 113 or R 114 is preferably a group having a hydroxyl group. As the monovalent organic group represented by R 113 or R 114 , a substituent that improves the solubility of the developer can be preferably used. From the viewpoint of solubility to an aqueous developer, R 113 or R 114 is more preferably a hydrogen atom, 2-hydroxybenzyl, 3-hydroxybenzyl, and 4-hydroxybenzyl.

從對有機溶劑的溶解度的觀點考慮,R113 或R114 係1價的有機基團為較佳。作為1價的有機基團,包含直鏈或支鏈烷基、環狀烷基、芳香族基為較佳,被芳香族基取代之烷基為更佳。 烷基的碳數係1~30為較佳(當為環狀時為3以上)。烷基可以為直鏈、支鏈、環狀中的任一個。作為直鏈或支鏈烷基,例如,可舉出甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基,十八烷基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基及2-乙基己基。環狀烷基可以為單環環狀烷基,亦可以為多環環狀烷基。作為單環環狀的烷基,例如,可舉出環丙基、環丁基、環戊基、環己基、環庚基及環辛基。作為多環環狀的烷基,例如,可舉出金剛烷基、降莰基、莰基、莰烯基(camphenyl)、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基及蒎烯基(pinenyl)。又,作為被芳香族基取代之烷基,被後述之芳香族基取代之直鏈烷基為較佳。本說明書中,將在此規定之烷基稱為“Alk”。From the viewpoint of solubility in an organic solvent, R 113 or R 114 is preferably a monovalent organic group. As the monovalent organic group, it is preferable to include a linear or branched alkyl group, a cyclic alkyl group, and an aromatic group, and an alkyl group substituted with an aromatic group is more preferable. The carbon number of the alkyl group is preferably 1 to 30 (when it is cyclic, it is 3 or more). The alkyl group may be any of linear, branched, and cyclic. Examples of straight-chain or branched alkyl groups include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl Alkyl, octadecyl, isopropyl, isobutyl, second butyl, tertiary butyl, 1-ethylpentyl and 2-ethylhexyl. The cyclic alkyl group may be a monocyclic cyclic alkyl group or a polycyclic cyclic alkyl group. Examples of monocyclic cyclic alkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl. Examples of polycyclic cyclic alkyl groups include adamantyl, norbornyl, camphenyl, camphenyl (camphenyl), decahydronaphthyl, tricyclodecyl, tetracyclodecyl, and camphenyl. Diacyl, dicyclohexyl and pinenyl (pinenyl). In addition, as the alkyl group substituted with an aromatic group, a linear alkyl group substituted with an aromatic group described later is preferred. In this specification, the alkyl group defined herein is referred to as "Alk".

作為芳香族基,具體而言為經取代或未經取代的芳香族烴基(作為構成基團之環狀結構,可舉出苯環(上述式AR-1、AR-2、AR-3)、萘環、聯苯環(例如上述式AR-5、AR-6、AR-7)、雙苯基環(例如上述式AR-8、AR-9、AR-10)、茀環、并環戊二烯、茚環、薁環、庚搭烯環、茚烯環、苝環、稠五苯環、苊環、菲環、蒽環、稠四苯環、䓛(chrysene)環、聯三伸苯(triphenylene)環等)(本說明書中,將在此規定之芳香族烴基稱為“Ary”)或者經取代或未經取代的芳香族雜環基(作為構成基團之環狀結構,為茀環、吡咯環、呋喃環、噻吩環、咪唑環、口咢唑環、噻唑環、吡啶環、吡𠯤環、嘧啶環、嗒口井環、吲口巾環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹口巾環、喹啉環、酞嗪環、萘啶環、喹咢啉環、喹㗁唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻嗯環、色烯環、二苯并哌喃環、啡噁噻環、啡噻口井環或啡嗪環)(本說明書中,將在此規定之芳香族雜環稱為“Aro”)。The aromatic group is specifically a substituted or unsubstituted aromatic hydrocarbon group (the cyclic structure of the constituent group includes a benzene ring (the above formula AR-1, AR-2, AR-3), Naphthalene ring, biphenyl ring (such as the above formula AR-5, AR-6, AR-7), biphenyl ring (such as the above formula AR-8, AR-9, AR-10), stilbene ring, and cyclopentane Diene, indene ring, azulene ring, heptene ring, indenene ring, perylene ring, fused pentacene ring, acenaphthene ring, phenanthrene ring, anthracene ring, fused tetraphenyl ring, chrysene ring, terphenylene ring (Triphenylene ring, etc.) (in this specification, the aromatic hydrocarbon group defined herein is referred to as "Ary") or substituted or unsubstituted aromatic heterocyclic group (as the cyclic structure of the constituent group, it is 茀Ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyridine ring, pyrimidine ring, takwell ring, indole ring, indole ring, benzofuran ring , Benzothiophene ring, isobenzofuran ring, quinoline ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoline ring, quinazoline ring, isoquinoline ring, carbazole ring, phenanthrene Pyridine ring, acridine ring, phenanthroline ring, thien ring, chromene ring, dibenzopyran ring, phenoxathi ring, phenanthrene ring or phenanthrazine ring) (in this manual, it will be specified here The aromatic heterocyclic ring is called "Aro").

又,聚醯亞胺前驅物中,於結構單元中具有氟原子亦為較佳。聚醯亞胺前驅物中的氟原子含量為10質量%以上為較佳,並且20質量%以下為更佳。上限並無特別限制,實際上為50質量%以下。In addition, it is also preferable that the polyimide precursor has a fluorine atom in the structural unit. The fluorine atom content in the polyimide precursor is preferably 10% by mass or more, and more preferably 20% by mass or less. The upper limit is not particularly limited, but is actually 50% by mass or less.

又,以提高與基板的黏合性為目的,可以使具有矽氧烷結構之脂肪族基與由式(1)表示之構成單元共聚合。具體而言,作為二胺成分,可舉出雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等。In addition, for the purpose of improving the adhesion to the substrate, the aliphatic group having a siloxane structure and the structural unit represented by formula (1) can be copolymerized. Specifically, examples of the diamine component include bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, and the like.

由式(1)表示之構成單元為由式(1-A)或式(1-B)表示之構成單元為較佳。 [化學式26]

Figure 02_image051
A11 及A12 表示氧原子或NH,R111 及R112 分別獨立地表示2價的有機基團,R113 及R114 分別獨立地表示氫原子或1價的有機基團,R113 及R114 中的至少一者為包含自由基聚合性基團之基團為較佳,自由基聚合性基團為更較佳。The structural unit represented by formula (1) is preferably a structural unit represented by formula (1-A) or formula (1-B). [Chemical formula 26]
Figure 02_image051
A 11 and A 12 represent an oxygen atom or NH, R 111 and R 112 each independently represent a divalent organic group, R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group, R 113 and R It is preferable that at least one of 114 is a group containing a radical polymerizable group, and a radical polymerizable group is more preferable.

A11 、A12 、R111 、R113 及R114 的分別獨立地較佳的範圍的含義與式(1)中的A1 、A2 、R111 、R113 及R114 的較佳的範圍相同。 R112 的較佳的範圍的含義與式(5)中的R112 相同,氧原子為更佳。 式中的羰基與苯環的鍵結位置為式(1-A)中的4,5,3’,4’為較佳。式(1-B)中,1,2,4,5為較佳。A 11 , A 12 , R 111 , R 113, and R 114 have the same meaning as the preferred ranges of A 1 , A 2 , R 111 , R 113 and R 114 in formula (1). the same. The same as R (5) in the preferred range of meaning as in formula R 112 112, more preferably an oxygen atom. The bonding position of the carbonyl group and the benzene ring in the formula is preferably 4, 5, 3', 4'in the formula (1-A). In formula (1-B), 1, 2, 4, and 5 are preferred.

聚醯亞胺前驅物中,由式(1)表示之構成單元可以為1種,亦可以為2種以上。又,可以包含由式(1)表示之構成單元的結構異構體。又,除了上述的式(1)的構成單元以外,聚醯亞胺前驅物還可以包含其他種類的重複結構單元。In the polyimide precursor, the structural unit represented by the formula (1) may be one type or two or more types. Furthermore, it may contain structural isomers of the structural unit represented by formula (1). Moreover, in addition to the structural unit of the above-mentioned formula (1), the polyimide precursor may contain other kinds of repeating structural units.

作為本發明中的聚醯亞胺前驅物的一實施形態,可例示總構成單元的50莫耳%以上,進而為70莫耳%以上,尤其90莫耳%以上係由式(1)表示之構成單元之聚醯亞胺前驅物。作為上限,實際為100莫耳%以下。As an embodiment of the polyimide precursor in the present invention, 50 mol% or more of the total structural unit can be exemplified, further 70 mol% or more, especially 90 mol% or more, represented by formula (1) The polyimide precursor of the constituent unit. As the upper limit, it is actually 100 mol% or less.

聚醯亞胺前驅物的重量平均分子量(Mw)較佳為2000~500000,更佳為5000~100000,進一步較佳為10000~50000。又,數平均分子量(Mn)較佳為800~250000,更佳為2000~50000,進一步較佳為4000~25000。 聚醯亞胺前驅物的分子量的分散度為1.5~3.5為較佳,2~3為更佳。The weight average molecular weight (Mw) of the polyimide precursor is preferably 2,000 to 500,000, more preferably 5,000 to 100,000, and still more preferably 10,000 to 50,000. In addition, the number average molecular weight (Mn) is preferably 800 to 250,000, more preferably 2,000 to 50,000, and still more preferably 4,000 to 25,000. The molecular weight dispersion of the polyimide precursor is preferably 1.5-3.5, more preferably 2-3.

聚醯亞胺前驅物可藉由使二羧酸或二羧酸衍生物與二胺反應而得到。較佳為使用鹵化劑對二羧酸或二羧酸衍生物進行鹵化之後,使其與二胺反應而得到。 聚醯亞胺前驅物的製造方法中,進行反應時,使用有機溶劑為較佳。有機溶劑可以為1種,亦可以為2種以上。 作為有機溶劑,能夠依原料適當設定,可例示吡啶、二乙二醇二甲醚(二甘二甲醚)、N-甲基吡咯啶酮及N-乙基吡咯啶酮。The polyimide precursor can be obtained by reacting a dicarboxylic acid or a dicarboxylic acid derivative with a diamine. Preferably, it is obtained by halogenating a dicarboxylic acid or a dicarboxylic acid derivative using a halogenating agent, and then reacting it with a diamine. In the production method of the polyimide precursor, it is preferable to use an organic solvent when performing the reaction. The organic solvent may be one type or two or more types. The organic solvent can be appropriately set according to the raw material, and pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone, and N-ethylpyrrolidone can be exemplified.

製造聚醯亞胺前驅物時,包括析出固體之步驟為較佳。具體而言,使反應液中的聚醯亞胺前驅物沉澱於水中,使四氫呋喃等聚醯亞胺前驅物溶解於可溶性溶劑,藉此能夠進行固體析出。When manufacturing the polyimide precursor, it is preferable to include a step of separating out solids. Specifically, the polyimide precursor in the reaction liquid is precipitated in water, and the polyimide precursor such as tetrahydrofuran is dissolved in a soluble solvent, thereby enabling solid precipitation.

<聚苯并㗁唑前驅物> 聚苯并㗁唑前驅物包含由下述式(2)表示之構成單元為較佳。 [化學式27]

Figure 02_image053
R121 表示2價的有機基團,R122 表示4價的有機基團,R123 及R124 分別獨立地表示氫原子或1價的有機基團。<Polybenzoxazole precursor> The polybenzoxazole precursor preferably contains a structural unit represented by the following formula (2). [Chemical formula 27]
Figure 02_image053
R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group.

R121 表示2價的有機基團。作為2價的有機基團,包含脂肪族基(碳數1~24為較佳,1~12為更佳,1~6為特佳)及芳香族基(碳數6~22為較佳,6~14為更佳,6~12為特佳)中的至少一種之基團為較佳。作為構成R121 之芳香族基,可舉出上述式(1)的R111 的例子。作為上述脂肪族基,直鏈脂肪族基為較佳。R121 源自4,4’-氧代二苯甲醯氯為較佳。 式(2)中,R122 表示4價的有機基團。作為4價的有機基團,定義與上述式(1)中的R115 相同,較佳的範圍亦相同。R122 源自2,2’-雙(3-胺基-4-羥基苯基)六氟丙烷為較佳。 R123 及R124 分別獨立地表示氫原子或1價的有機基團,定義與上述式(1)中的R113 及R114 相同,較佳的範圍亦相同。R 121 represents a divalent organic group. As a divalent organic group, aliphatic groups (1-24 carbons are preferred, 1-12 are more preferred, and 1-6 are particularly preferred) and aromatic groups (carbons 6-22 are preferred, 6 to 14 are more preferable, and 6 to 12 are particularly preferable) at least one group is preferable. Examples of the aromatic group constituting R 121 include R 111 in the above formula (1). As the aforementioned aliphatic group, a straight-chain aliphatic group is preferred. Preferably, R 121 is derived from 4,4'-oxobenzyl chloride. In formula (2), R 122 represents a tetravalent organic group. As a tetravalent organic group, the definition is the same as that of R 115 in the above formula (1), and the preferred range is also the same. R 122 is preferably derived from 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane. R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group, and have the same definitions as R 113 and R 114 in the above formula (1), and the preferred ranges are also the same.

除了上述的式(2)的構成單元以外,聚苯并㗁唑前驅物還可以包含其他種類的重複結構單元。In addition to the structural unit of the above-mentioned formula (2), the polybenzoxazole precursor may also contain other kinds of repeating structural units.

聚苯并㗁唑前驅物的重量平均分子量(Mw)較佳為2000~500000,更佳為5000~100000,進一步較佳為10000~50000。又,數平均分子量(Mn)較佳為800~250000,更佳為2000~50000,進一步較佳為4000~25000。 聚苯并㗁唑前驅物的分子量的分散度為1.5~3.5為較佳,2~3為更佳。The weight average molecular weight (Mw) of the polybenzoxazole precursor is preferably 2,000 to 500,000, more preferably 5,000 to 100,000, and still more preferably 10,000 to 50,000. In addition, the number average molecular weight (Mn) is preferably 800 to 250,000, more preferably 2,000 to 50,000, and still more preferably 4,000 to 25,000. The molecular weight dispersion of the polybenzoxazole precursor is preferably 1.5 to 3.5, and more preferably 2 to 3.

本發明的感光性樹脂組成物中的聚合物前驅物的含量相對於組成物的總固體成分係20質量%以上為較佳,30質量%以上為更佳,40質量%以上為進一步較佳,50質量%以上為進一步較佳,60質量%以上為進一步較佳,70質量%以上為進一步較佳。又,本發明的感光性樹脂組成物中的聚合物前驅物的含量相對於組成物的總固體成分為99.5質量%以下為較佳,99質量%以下為更佳,98質量%以下為進一步較佳,95質量%以下為更進一步較佳。 本發明的感光性樹脂組成物可以僅包含1種聚合物前驅物,亦可以包含2種以上。當包含2種以上時,合計量成為上述範圍為較佳。The content of the polymer precursor in the photosensitive resin composition of the present invention is preferably 20% by mass or more relative to the total solid content of the composition, more preferably 30% by mass or more, and even more preferably 40% by mass or more, It is more preferably 50% by mass or more, more preferably 60% by mass or more, and more preferably 70% by mass or more. Furthermore, the content of the polymer precursor in the photosensitive resin composition of the present invention is preferably 99.5% by mass or less relative to the total solid content of the composition, more preferably 99% by mass or less, and more preferably 98% by mass or less. Preferably, 95% by mass or less is more preferable. The photosensitive resin composition of this invention may contain only 1 type of polymer precursor, and may contain 2 or more types. When two or more types are contained, the total amount is preferably in the above-mentioned range.

<聚合起始劑> 本發明的感光性樹脂組成物包含光聚合起始劑。光聚合起始劑係光自由基聚合起始劑為較佳。又,亦可以將熱聚合起始劑(較佳為熱自由基聚合起始劑)作為促進由熱鹼產生劑產生之鹼的聚合者而併用。<Polymerization initiator> The photosensitive resin composition of the present invention contains a photopolymerization initiator. The photopolymerization initiator is preferably a photoradical polymerization initiator. In addition, a thermal polymerization initiator (preferably a thermal radical polymerization initiator) may be used in combination as an agent that promotes the polymerization of the alkali generated by the thermal alkali generator.

<<光聚合起始劑>> 作為光聚合起始劑,並無特別限制,能夠從公知的光聚合起始劑中適當選擇。例如,對從紫外線區域至可見區域的光線具有感光性之光自由基聚合起始劑為較佳。又,可以為與光激發之增感劑產生一些作用,並產生活性自由基之活性劑。 光聚合起始劑至少含有1種於約300~800nm(較佳為330~500nm)的範圍內至少具有約50莫耳吸光係數之化合物為較佳。化合物的莫耳吸光係數能夠利用公知的方法來進行測量。例如,藉由紫外可見分光光度計(Varian公司製Cary-5 spectrophotometer),並使用乙酸乙酯溶劑而於0.01g/L的濃度下進行測量為較佳。<<Photopolymerization initiator>> The photopolymerization initiator is not particularly limited, and can be appropriately selected from known photopolymerization initiators. For example, a radical photopolymerization initiator having photosensitivity to light from the ultraviolet region to the visible region is preferable. In addition, it can be an active agent that has some effect on the sensitizer excited by light and generates active free radicals. The photopolymerization initiator preferably contains at least one compound having at least about 50 molar absorption coefficient in the range of about 300 to 800 nm (preferably 330 to 500 nm). The molar absorption coefficient of the compound can be measured by a known method. For example, it is better to measure with an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian) and use an ethyl acetate solvent at a concentration of 0.01 g/L.

藉由本發明的較佳的實施形態之感光性樹脂組成物包含特定熱鹼產生劑及光聚合起始劑,可期待以下的作用。 將感光性樹脂組成物應用於半導體晶圓等基板等來形成感光性樹脂組成物層之後進行加熱,藉此能夠環化含雜環的聚合物的前驅物來硬化(一次硬化)組成物。該加熱硬化中,本發明之特定熱鹼產生劑有用。接著,向硬化之感光性樹脂組成物層照射光。藉此,產生(二次硬化)因藉由上述光聚合起始劑的作用產生之自由基而引起之硬化。此時,亦可以設為藉由聚合物前驅物具有聚合性基時的聚合性基或聚合性化合物進行聚合來進行光硬化之形態。其結果,能夠降低光照射部中的溶解性。具有利用該作用能夠簡便地製作溶解性不同之區域之優點。具體而言,經由具有僅遮蔽電極部之圖案之光罩,對感光性樹脂組成物層進行曝光。藉此,依據電極的圖案,能夠製作溶解性不同之區域。Since the photosensitive resin composition of the preferred embodiment of the present invention contains a specific thermal base generator and a photopolymerization initiator, the following effects can be expected. The photosensitive resin composition is applied to a substrate such as a semiconductor wafer to form a photosensitive resin composition layer and then heated, whereby the precursor of the heterocyclic ring-containing polymer can be cyclized to harden the composition (primary curing). In this heat curing, the specific thermal alkali generator of the present invention is useful. Next, light is irradiated to the cured photosensitive resin composition layer. This produces (secondary curing) curing caused by free radicals generated by the action of the aforementioned photopolymerization initiator. At this time, it may be a form in which the polymerizable group or polymerizable compound when the polymer precursor has a polymerizable group is polymerized for photocuring. As a result, the solubility in the light irradiation part can be reduced. It has the advantage that the area with different solubility can be made easily by using this function. Specifically, the photosensitive resin composition layer is exposed through a photomask having a pattern for shielding only the electrode portion. In this way, regions with different solubility can be produced according to the electrode pattern.

作為光聚合起始劑,能夠任意使用公知的化合物。例如,能夠參閱國際公開公報第WO2015/199220號小冊子的0107~119段的記載,引用其而編入本說明書中。As the photopolymerization initiator, any known compound can be used arbitrarily. For example, it is possible to refer to the description of paragraphs 0107 to 119 of the pamphlet of International Publication No. WO2015/199220, and to quote them and incorporate them into this specification.

本發明的感光性樹脂組成物中,尤其作為光聚合起始劑而使用肟化合物(肟系光聚合起始劑)為較佳。肟系光聚合起始劑於分子內具有>C=N-O-C(=O)-的連接基。 市售品中,還可較佳地使用IRGACURE OXE 01、IRGACURE OXE 02、IRGACURE OXE 03、IRGACURE OXE 04、IRGACURE OXE 369(以上、BASF公司製)、ADEKA OPTOMER N-1919(ADEKA Corporation製、日本特開2012-014052號公報中所記載之光自由基聚合起始劑2)。又,能夠使用TR-PBG-304(Changzhou Tronly New Electronic Materials Co.,Ltd.製)、ADEKAARKLS NCI-831及ADEKAARKLS NCI-930(ADEKA CORPORATION製)。又,能夠使用DFI-091(DAITO CHEMIX Co.,Ltd.製)。In the photosensitive resin composition of the present invention, it is particularly preferable to use an oxime compound (oxime-based photopolymerization initiator) as the photopolymerization initiator. The oxime-based photopolymerization initiator has a linking group >C=N-O-C(=O)- in the molecule. Among the commercially available products, IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, IRGACURE OXE 04, IRGACURE OXE 369 (above, made by BASF), ADEKA OPTOMER N-1919 (made by ADEKA Corporation, Japan special Open the photo-radical polymerization initiator described in 2012-014052 No. 2). In addition, TR-PBG-304 (manufactured by Changzhou Tronly New Electronic Materials Co., Ltd.), ADEKAARKLS NCI-831, and ADEKAARKLS NCI-930 (manufactured by ADEKA CORPORATION) can be used. In addition, DFI-091 (manufactured by DAITO CHEMIX Co., Ltd.) can be used.

包含光聚合起始劑之情況下,其含量相對於本發明的感光性樹脂組成物的總固體成分為0.1質量%以上為較佳,0.5質量%以上為更佳,1.0質量%以上為進一步較佳。作為上限,30質量%以下為較佳,20質量%以下為更佳,15質量%以下為進一步較佳,10質量%以下為更進一步較佳。光聚合起始劑可以僅含有1種,亦可以含有2種以上。當含有2種以上的光聚合起始劑時,其合計係上述範圍為較佳。When the photopolymerization initiator is included, the content is preferably 0.1% by mass or more relative to the total solid content of the photosensitive resin composition of the present invention, more preferably 0.5% by mass or more, and more preferably 1.0% by mass or more. good. As the upper limit, 30% by mass or less is preferable, 20% by mass or less is more preferable, 15% by mass or less is more preferable, and 10% by mass or less is even more preferable. The photopolymerization initiator may contain only one type or two or more types. When two or more types of photopolymerization initiators are contained, the total amount is preferably in the above range.

<<熱聚合起始劑>> 本發明中亦可以使用熱聚合起始劑。熱聚合起始劑係藉由熱的能量而產生自由基,並開始或促進具有聚合性之化合物的聚合反應之化合物。藉由添加熱聚合起始劑,能夠進行聚合物前驅物的環化,並且進行聚合物前驅物的聚合反應,因此能夠實現更高度的耐熱化。 作為熱聚合起始劑,具體而言,可舉出日本特開2008-063554號公報的0074~0118段中所記載之化合物。<<Thermal polymerization initiator>> A thermal polymerization initiator can also be used in the present invention. The thermal polymerization initiator is a compound that generates free radicals by thermal energy and initiates or promotes the polymerization reaction of the polymerizable compound. By adding the thermal polymerization initiator, the cyclization of the polymer precursor can be carried out, and the polymerization reaction of the polymer precursor can be carried out, so that a higher degree of heat resistance can be achieved. Specific examples of the thermal polymerization initiator include the compounds described in paragraphs 0074 to 0118 of JP 2008-063554 A.

當含有熱聚合起始劑時,其含量相對於本發明的感光性樹脂組成物的總固體成分係0.1~30質量%為較佳,更佳為0.1~20質量%,進一步較佳為5~15質量%。熱聚合起始劑可以僅含有1種,亦可以含有2種以上。當含有2種以上的熱聚合起始劑時,其合計係上述範圍為較佳。When a thermal polymerization initiator is contained, its content is preferably 0.1 to 30% by mass relative to the total solid content of the photosensitive resin composition of the present invention, more preferably 0.1 to 20% by mass, and still more preferably 5 to 15% by mass. The thermal polymerization initiator may contain only one type or two or more types. When two or more kinds of thermal polymerization initiators are contained, the total amount is preferably in the above-mentioned range.

<聚合性化合物> 本發明的感光性樹脂組成物含有聚合性化合物,含有自由基聚合性化合物為較佳。作為聚合性基,可舉出上述聚合性基Ps的例,其中,可舉出具有乙烯基、烯丙基、乙烯基苯基、(甲基)丙烯醯基等乙烯性不飽和鍵之基團Et的例子。聚合性化合物中所包含之聚合性基為(甲基)丙烯醯基為特佳。<Polymerizable compound> The photosensitive resin composition of the present invention contains a polymerizable compound, and preferably contains a radical polymerizable compound. As the polymerizable group, examples of the above-mentioned polymerizable group Ps can be given, among them, groups having ethylenically unsaturated bonds such as vinyl, allyl, vinylphenyl, (meth)acryloyl group, etc. Et example. It is particularly preferable that the polymerizable group contained in the polymerizable compound is a (meth)acryloyl group.

聚合性化合物所具有之聚合性基的數量可以為1個,亦可以為2個以上,但是聚合性化合物具有2個以上聚合性基為較佳,具有3個以上為更佳。上限係15個以下為較佳,10個以下為更佳,8個以下為進一步較佳。The number of polymerizable groups possessed by the polymerizable compound may be one or two or more. However, the polymerizable compound preferably has two or more polymerizable groups, and more preferably has three or more polymerizable groups. The upper limit is preferably 15 or less, more preferably 10 or less, and even more preferably 8 or less.

聚合性化合物的分子量係2000以下為較佳,1500以下為更佳,900以下為進一步較佳。聚合性化合物的分子量的下限為100以上為較佳。The molecular weight of the polymerizable compound is preferably 2000 or less, more preferably 1500 or less, and more preferably 900 or less. The lower limit of the molecular weight of the polymerizable compound is preferably 100 or more.

從顯影性的觀點考慮,本發明的感光性樹脂組成物包含至少1種包含2個以上聚合性基(較佳為自由基聚合性基)之2官能以上的聚合性化合物為較佳,包含至少1種3官能以上的聚合性化合物為更佳。又,可以為2官能的聚合性化合物與3官能以上的聚合性化合物的混合物。另外,聚合性化合物的官能基數係指1分子中的聚合性基的數量。From the viewpoint of developability, the photosensitive resin composition of the present invention preferably contains at least one bifunctional or more polymerizable compound containing two or more polymerizable groups (preferably radical polymerizable groups), and at least One type of polymerizable compound having three or more functions is more preferable. In addition, it may be a mixture of a bifunctional polymerizable compound and a trifunctional or higher polymerizable compound. In addition, the number of functional groups of a polymerizable compound refers to the number of polymerizable groups in one molecule.

作為聚合性化合物的具體例,能夠參閱國際公開公報第WO2015/199220號小冊子的0056~0100段中所記載之化合物,引用其而編入本說明書中。As a specific example of the polymerizable compound, the compound described in paragraphs 0056 to 0100 of the pamphlet of International Publication No. WO2015/199220 can be referred to, and these are incorporated into this specification by quoting.

作為聚合性化合物,二新戊四醇三丙烯酸酯(作為市售品為KAYARAD D-330;Nippon Kayaku Co.,Ltd.製)、二新戊四醇四丙烯酸酯(作為市售品為KAYARAD D-320;Nippon Kayaku Co.,Ltd.製、A-TMMT:Shin-Nakamura Chemical Co.,Ltd.製)、二新戊四醇五(甲基)丙烯酸酯(作為市售品為KAYARAD D-310;Nippon Kayaku Co.,Ltd.製)、二新戊四醇六(甲基)丙烯酸酯(作為市售品為KAYARAD DPHA;Nippon Kayaku Co.,Ltd.製、A-DPH;Shin-Nakamura Chemical Co.,Ltd.製)及該等的(甲基)丙烯醯基經由乙二醇殘基或丙二醇殘基鍵結之結構為較佳。亦能夠使用該等的寡聚物類型。As a polymerizable compound, dineopentaerythritol triacrylate (as a commercially available product is KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), dineopentaerythritol tetraacrylate (as a commercial product is KAYARAD D -320; manufactured by Nippon Kayaku Co., Ltd., A-TMMT: manufactured by Shin-Nakamura Chemical Co., Ltd.), dineopentaerythritol penta(meth)acrylate (as a commercially available product is KAYARAD D-310 ; Nippon Kayaku Co., Ltd. make), dineopentyl erythritol hexa(meth)acrylate (as a commercial product is KAYARAD DPHA; Nippon Kayaku Co., Ltd. make, A-DPH; Shin-Nakamura Chemical Co ., Ltd.) and a structure in which these (meth)acrylic groups are bonded via ethylene glycol residues or propylene glycol residues are preferred. These oligomer types can also be used.

作為聚合性化合物的市售品,例如可舉出Sartomer Company, Inc製的作為具有4個伸乙氧基鏈之4官能丙烯酸酯之SR-494、作為具有4個乙烯氧基鏈之2官能丙烯酸甲酯之Sartomer Company, Inc製SR-209、231、239、Nippon Kayaku Co.,Ltd.製的作為具有6個伸戊氧基鏈之6官能丙烯酸酯之DPCA-60、作為具有3個異伸丁氧基鏈之3官能丙烯酸酯之TPA-330、胺基甲酸酯寡聚物UAS-10、胺基甲酸酯寡聚物UAB-140(NIPPON PAPER INDUSTRIES CO.,LTD.製)、NK ESTER M-40G、NK ESTER 4G、NK ESTER M-9300、NK ESTER A-9300、UA-7200(Shin-Nakamura Chemical Co.,Ltd製)、DPHA-40H(Nippon Kayaku Co.,Ltd.製)、UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(Kyoeisha chemical Co.,Ltd.製)、BLEMMER PME400(NOF CORPORATION.製)等。Commercial products of polymerizable compounds include, for example, SR-494 manufactured by Sartomer Company, Inc as a 4-functional acrylate having 4 ethoxy chains, and SR-494 as a difunctional acrylic having 4 ethyleneoxy chains. SR-209, 231, 239 manufactured by Sartomer Company, Inc. of methyl ester, DPCA-60 manufactured by Nippon Kayaku Co., Ltd. as a 6-functional acrylate with 6 pentyloxy chains, as having 3 different extensions Butoxy chain trifunctional acrylate TPA-330, urethane oligomer UAS-10, urethane oligomer UAB-140 (manufactured by NIPPON PAPER INDUSTRIES CO., LTD.), NK ESTER M-40G, NK ESTER 4G, NK ESTER M-9300, NK ESTER A-9300, UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), BLEMMER PME400 (manufactured by NOF CORPORATION), etc.

聚合性化合物的含量相對於本發明的感光性樹脂組成物的總固體成分為1質量%以上為較佳,3質量%以上為更佳,5質量%以上為進一步較佳。作為上限,60質量%以下為較佳,50質量%以下為更佳,30質量%以下為進一步較佳。 從圖案形成的觀點考慮,藉由以上述下限值以上使用聚合性化合物具有優點為較佳。又,從斷裂伸長率的觀點考慮,藉由以上述上限值以下使用聚合性化合物具有優點為較佳。 其他聚合性化合物可以單獨使用1種,亦可以混合使用2種以上。當同時使用2種以上時,其合計量成為上述範圍為較佳。The content of the polymerizable compound is preferably 1% by mass or more with respect to the total solid content of the photosensitive resin composition of the present invention, more preferably 3% by mass or more, and even more preferably 5% by mass or more. As the upper limit, 60% by mass or less is preferable, 50% by mass or less is more preferable, and 30% by mass or less is more preferable. From the viewpoint of pattern formation, it is preferable that the use of a polymerizable compound above the above lower limit has advantages. In addition, from the viewpoint of elongation at break, it is preferable that the use of a polymerizable compound below the above upper limit has advantages. The other polymerizable compounds may be used singly or in combination of two or more kinds. When two or more types are used at the same time, the total amount is preferably in the above-mentioned range.

<溶劑> 本發明的感光性樹脂組成物含有溶劑為較佳。溶劑能夠任意使用公知的溶劑。溶劑較佳為有機溶劑。作為有機溶劑,可舉出酯類、醚類、酮類、芳香族烴類、亞碸類、醯胺類等化合物。 作為酯類,例如作為較佳者,可舉出乙酸乙酯、乙酸正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例如,烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如,甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例如,3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如,3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例如,2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如,2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如,2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等。 作為醚類,例如作為較佳者,可舉出二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等。 作為酮類,例如作為較佳者,可舉出甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮等。 作為芳香族烴類,例如作為較佳者,可舉出甲苯、二甲苯、苯甲醚、檸檬烯等。 作為亞碸類,例如作為較佳者,可舉出二甲基亞碸。 作為醯胺類,作為較佳者,可舉出N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺等。<Solvent> The photosensitive resin composition of the present invention preferably contains a solvent. As the solvent, any known solvent can be used. The solvent is preferably an organic solvent. Examples of organic solvents include compounds such as esters, ethers, ketones, aromatic hydrocarbons, sulfenes, and amines. As esters, for example, preferred ones include ethyl acetate, n-butyl acetate, isobutyl acetate, pentyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate Ester, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxy acetate (for example, methyl alkoxy acetate, Ethyl alkoxyacetate, butyl alkoxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate Etc.)), 3-alkoxypropionic acid alkyl esters (for example, 3-alkoxy methyl propionate, 3-alkoxy ethyl propionate, etc. (for example, 3-methoxy propionic acid methyl ester , Ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), 2-alkoxypropionic acid alkyl esters (for example, 2- Methyl alkoxypropionate, ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (for example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate , 2-methoxypropionic acid propyl ester, 2-ethoxypropionic acid methyl ester, 2-ethoxypropionic acid ethyl ester)), 2-alkoxy-2-methylpropionic acid methyl ester and 2- Ethyl alkoxy-2-methylpropionate (for example, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate Ester, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, methyl 2-oxobutyrate, ethyl 2-oxobutyrate, etc. As ethers, for example, preferred ones include diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve Acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropylene Ether acetate etc. As the ketones, for example, preferred ones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, and the like. As aromatic hydrocarbons, for example, preferable ones include toluene, xylene, anisole, limonene and the like. As the sulfenite, for example, a preferable one includes dimethyl sulfenite. As the amides, preferred ones include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylacetamide, N,N- Dimethylformamide and so on.

關於溶劑,從塗佈面狀的改良等的觀點考慮,混合2種以上之形態亦為較佳。 本發明中,選自3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、N-甲基-2-吡咯啶酮、丙二醇甲醚及丙二醇甲醚乙酸酯中之一種溶劑或由2種以上構成之混合溶劑為較佳。同時使用二甲基亞碸和γ-丁內酯為特佳。Regarding the solvent, from the viewpoint of improvement of the coating surface shape, etc., a form in which two or more types are mixed is also preferable. In the present invention, it is selected from methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate , Methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethyl sulfene, ethyl carbitol acetate, butyl carbitol One solvent of acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, and propylene glycol methyl ether acetate, or a mixed solvent composed of two or more types is preferred. It is particularly preferable to use dimethyl sulfoxide and γ-butyrolactone at the same time.

關於溶劑的含量,從塗佈性的觀點考慮,設為本發明的感光性樹脂組成物的總固體成分濃度成為5~80質量%之量為較佳,設為成為5~75質量%之量為更佳,設為成為10~70質量%之量為進一步較佳,設為成為40~70質量%為更進一步較佳。溶劑的含量依所希望的厚度和塗佈方法來進行調節即可。 溶劑可以僅含有1種,亦可以含有2種以上。當含有2種以上溶劑時,其合計為上述範圍為較佳。Regarding the content of the solvent, from the viewpoint of coatability, the total solid content of the photosensitive resin composition of the present invention is preferably 5 to 80% by mass, and 5 to 75% by mass More preferably, it is more preferable to set it as 10-70 mass %, and it is still more preferable to set it as 40-70 mass %. The content of the solvent can be adjusted according to the desired thickness and coating method. The solvent may contain only one type or two or more types. When two or more kinds of solvents are contained, the total of them is preferably in the above-mentioned range.

<遷移抑制劑> 本發明的感光性樹脂組成物還包含遷移抑制劑為較佳。 藉由包含遷移抑制劑,能夠有效地抑制源自金屬層(金屬配線)的金屬離子轉移到感光性樹脂組成物層內。 作為遷移抑制劑,並無特別限制,可舉出具有雜環(吡咯環、呋喃環、噻吩環、咪唑環、㗁唑環、噻唑環、吡唑環、異㗁唑環、異噻唑環、四唑環、吡啶環、噠𠯤環、嘧啶環、吡𠯤環、哌啶環、哌𠯤環、口末啉環、2H-吡喃環及6H-吡喃環、三𠯤環)之化合物、具有硫脲類及巰基之化合物、受阻酚系化合物、水楊酸衍生物系化合物、醯肼衍生物系化合物。尤其,能夠較佳地使用1,2,4-三唑、苯并三唑等三唑系化合物、1H-四唑、5-苯基四唑等四唑系化合物。<Migration inhibitor> The photosensitive resin composition of the present invention preferably further contains a migration inhibitor. By including the migration inhibitor, it is possible to effectively suppress the migration of metal ions derived from the metal layer (metal wiring) into the photosensitive resin composition layer. The migration inhibitor is not particularly limited, and examples include heterocycles (pyrrole ring, furan ring, thiophene ring, imidazole ring, azole ring, thiazole ring, pyrazole ring, isoazole ring, isothiazole ring, tetra Azole ring, pyridine ring, pyran ring, pyrimidine ring, pyridine ring, piperidine ring, piperidine ring, oromoline ring, 2H-pyran ring and 6H-pyran ring, tri-pyran ring) compounds, with Thiourea and mercapto compounds, hindered phenol compounds, salicylic acid derivative compounds, and hydrazine derivative compounds. In particular, triazole-based compounds such as 1,2,4-triazole and benzotriazole, and tetrazole-based compounds such as 1H-tetrazole and 5-phenyltetrazole can be preferably used.

又,亦能夠使用捕獲鹵素離子等陰離子之離子捕獲劑。In addition, ion trapping agents that trap anions such as halogen ions can also be used.

作為其他遷移抑制劑,能夠使用日本特開2013-015701號公報的0094段中所記載之防鏽劑、日本特開2009-283711號公報的0073~0076段中所記載之化合物、日本特開2011-059656號公報的0052段中所記載之化合物、日本特開2012-194520號公報的0114、0116段及0118段中所記載之化合物等。As other migration inhibitors, the rust inhibitor described in paragraph 0094 of JP 2013-015701 A, the compounds described in paragraphs 0073 to 0076 of JP 2009-283711, and JP 2011 can be used. -059656, the compound described in paragraph 0052, the compound described in paragraph 0114, paragraph 0116, and paragraph 0118 of JP 2012-194520, etc.

作為遷移抑制劑的具體例,可舉出下述化合物。 [化學式28]

Figure 02_image055
As specific examples of migration inhibitors, the following compounds can be given. [Chemical formula 28]
Figure 02_image055

當感光性樹脂組成物具有遷移抑制劑時,遷移抑制劑的含量相對於感光性樹脂組成物的總固體成分係0.01~5.0質量%為較佳,0.05~2.0質量%為更佳,0.1~1.0質量%為進一步較佳。 遷移抑制劑可以為僅1種,亦可以為2種以上。當遷移抑制劑係2種以上時,其合計係上述範圍為較佳。When the photosensitive resin composition has a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0% by mass relative to the total solid content of the photosensitive resin composition, more preferably 0.05 to 2.0% by mass, and 0.1 to 1.0 The mass% is more preferable. There may be only one type of migration inhibitor, or two or more types. When two or more types of migration inhibitors are used, the total of them is preferably in the above-mentioned range.

<聚合抑制劑> 本發明的感光性樹脂組成物包含聚合抑制劑為較佳。 作為聚合抑制劑,例如可較佳地使用對苯二酚、4-甲氧基苯酚、二-第三丁基-對甲酚、鄰苯三酚、對-第三丁基鄰苯二酚、1,4-苯醌、二苯基-對苯醌、4,4’-硫代雙(3-甲基-6-第三丁基苯酚)、2,2’-亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基-N-苯基羥基胺鋁鹽、吩噻嗪、N-亞硝基二苯胺、N-苯基萘胺、伸乙基二胺四乙酸、1,2-環己二胺四乙酸、乙二醇醚二胺四乙酸、2,6-二-第三丁基-4-甲基苯酚、5-亞硝基-8-羥基喹啉、1-亞硝基-2-萘酚、2-亞硝基-1-萘酚、2-亞硝基-5-(N-乙基-N-磺基丙基胺)苯酚、N-亞硝基-N-(1-萘基)羥胺銨鹽、雙(4-羥基-3,5-第三丁基)苯基甲烷等。又,亦能夠使用日本特開2015-127817號公報的0060段中所記載之聚合抑制劑及國際公開WO2015/125469號的0031~0046段中所記載之化合物。 當本發明的感光性樹脂組成物具有聚合抑制劑時,聚合抑制劑的含量相對於本發明的感光性樹脂組成物的總固體成分係0.01~5質量%為較佳,0.02~3質量%為更佳,0.05~2.5質量%為進一步較佳。 聚合抑制劑可以為僅1種,亦可以為2種以上。當聚合抑制劑為2種以上時,其合計為上述範圍為較佳。<Polymerization inhibitor> The photosensitive resin composition of the present invention preferably contains a polymerization inhibitor. As the polymerization inhibitor, for example, hydroquinone, 4-methoxyphenol, di-tertiary butyl-p-cresol, pyrogallol, p-tert-butylcatechol, 1,4-Benzoquinone, diphenyl-p-benzoquinone, 4,4'-thiobis(3-methyl-6-tertiary butylphenol), 2,2'-methylenebis(4- Methyl-6-tertiary butylphenol), N-nitroso-N-phenylhydroxylamine aluminum salt, phenothiazine, N-nitroso diphenylamine, N-phenylnaphthylamine, ethylene diphenylamine Aminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, glycol ether diaminetetraacetic acid, 2,6-di-tert-butyl-4-methylphenol, 5-nitroso-8-hydroxyl Quinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamine)phenol, N -Nitroso-N-(1-naphthyl)hydroxylamine ammonium salt, bis(4-hydroxy-3,5-tertiarybutyl)phenylmethane, etc. In addition, the polymerization inhibitor described in paragraph 0060 of JP 2015-127817 A and the compound described in paragraphs 0031 to 0046 of International Publication WO2015/125469 can also be used. When the photosensitive resin composition of the present invention has a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 5% by mass relative to the total solid content of the photosensitive resin composition of the present invention, and 0.02 to 3% by mass More preferably, 0.05 to 2.5% by mass is still more preferable. There may be only one type of polymerization inhibitor, or two or more types. When there are two or more kinds of polymerization inhibitors, it is preferable that the sum total is the above range.

<金屬黏著性改良劑> 本發明的感光性樹脂組成物包含用於提高與使用於電極或配線等之金屬材料的密接性之金屬密接性改良劑為較佳。作為金屬密接性改良劑,可舉出矽烷偶聯劑等。<Metal adhesion improver> The photosensitive resin composition of the present invention preferably contains a metal adhesion modifier for improving the adhesion with metal materials used for electrodes, wiring, and the like. As a metal adhesion improver, a silane coupling agent etc. are mentioned.

作為矽烷偶聯劑的例,可舉出日本特開2014-191002號公報的0062~0073段中所記載之化合物、國際公開WO2011/080992A1號的0063~0071段中所記載之化合物、日本特開2014-191252號公報的0060~0061段中所記載之化合物、日本特開2014-041264號公報的0045~0052段中所記載之化合物、國際公開WO2014/097594號的0055段中所記載之化合物。又,如日本特開2011-128358號公報的0050~0058段中所記載那樣使用不同的2種以上的矽烷偶聯劑亦為較佳。又,矽烷偶聯劑使用下述化合物亦為較佳。以下式中,Et表示乙基。 [化學式29]

Figure 02_image057
Examples of silane coupling agents include the compounds described in paragraphs 0062 to 0073 of JP 2014-191002, the compounds described in paragraphs 0063 to 0071 of International Publication WO2011/080992A1, and JP The compound described in paragraphs 0060 to 0061 of 2014-191252, the compound described in paragraphs 0045 to 0052 of JP 2014-041264, and the compound described in paragraph 0055 of International Publication WO2014/097594. In addition, it is also preferable to use two or more different silane coupling agents as described in paragraphs 0050 to 0058 of JP 2011-128358 A. Moreover, it is also preferable to use the following compound as a silane coupling agent. In the following formulae, Et represents an ethyl group. [Chemical formula 29]
Figure 02_image057

又,金屬密接性改良劑還能夠使用日本特開2014-186186號公報的0046~0049段中所記載之化合物、日本特開2013-072935號公報的0032~0043段中所記載之硫化物。In addition, the metal adhesion improver can also use the compounds described in paragraphs 0046 to 0049 of JP 2014-186186 A, and the sulfides described in paragraphs 0032 to 0043 of JP 2013-072935 A.

本發明的感光性樹脂組成物具有金屬接黏性改良劑之情況下,其含量相對於本發明的感光性樹脂組成物的總固體成分為0.1~30質量%,更佳為0.5~15質量%的範圍,進一步較佳為0.5~5質量%的範圍。藉由設為上述下限值以上,硬化步驟後的硬化膜與金屬層的密接性變良好,藉由設為上述上限值以下,硬化步驟後的硬化膜的耐熱性、機械特性變良好。金屬密接性改良劑可以為僅1種,亦可以為2種以上。當使用2種以上時,其合計為上述範圍為較佳。When the photosensitive resin composition of the present invention has a metal adhesion improver, its content is 0.1-30% by mass, more preferably 0.5-15% by mass relative to the total solid content of the photosensitive resin composition of the present invention The range of is more preferably the range of 0.5 to 5 mass%. By setting it as the above-mentioned lower limit or more, the adhesiveness of the cured film after a hardening process becomes good, and by setting it as below the said upper limit, the heat resistance and mechanical properties of the cured film after a hardening process become good. There may be only one type of metal adhesion improver, or two or more types. When two or more types are used, it is preferable that the sum total is the above-mentioned range.

<其他添加劑> 本發明的感光性樹脂組成物在不損害本發明的效果之範圍內,能夠依需要對各種添加物,例如,光硬化促進劑、增感色素、鏈轉移劑、界面活性劑、高級脂肪酸衍生物、無機粒子、硬化劑、硬化催化劑、填充劑、抗氧化劑、紫外線吸收劑、凝聚抑制劑等進行摻合。對該等添加劑進行摻合時,將其合計摻合量設為組成物的固體成分的3質量%以下為較佳。<Other additives> The photosensitive resin composition of the present invention can add various additives, such as light curing accelerators, sensitizing dyes, chain transfer agents, surfactants, higher fatty acid derivatives, as needed, within the range that does not impair the effects of the present invention. , Inorganic particles, hardeners, hardening catalysts, fillers, antioxidants, ultraviolet absorbers, aggregation inhibitors, etc. are blended. When these additives are blended, the total blending amount is preferably 3% by mass or less of the solid content of the composition.

<<增感色素>> 本發明的感光性樹脂組成物可以含有增感色素。增感色素吸收既定的活性放射線而成為電子激發狀態。成為電子激發狀態之敏化色素與熱硬化促進劑、熱聚合起始劑、光聚合起始劑等接觸而產生電子轉移、能量轉移、發熱等的作用。藉此,熱硬化促進劑、熱聚合起始劑、光聚合起始劑發生化學變化而分解,並生成自由基、酸或者鹼。關於增感色素的詳細內容,能夠參閱日本特開2016-027357號公報的0161~0163段的記載,並將該內容編入本說明書中。<<Sensitizing pigment>> The photosensitive resin composition of the present invention may contain a sensitizing dye. The sensitizing dye absorbs predetermined active radiation and becomes an electronically excited state. The sensitizing dye in an electronically excited state comes into contact with a thermal hardening accelerator, a thermal polymerization initiator, a photopolymerization initiator, etc., to produce effects such as electron transfer, energy transfer, and heat generation. Thereby, the thermal hardening accelerator, thermal polymerization initiator, and photopolymerization initiator undergo chemical changes to decompose and generate radicals, acids, or bases. For the details of the sensitizing dye, refer to the description in paragraphs 0161 to 0163 of JP 2016-027357 A, and the contents are incorporated into this specification.

當本發明的感光性樹脂組成物含有增感色素時,增感色素的含量相對於本發明的感光性樹脂組成物的總固體成分係0.01~20質量%為較佳,0.1~15質量%為更佳,0.5~10質量%為進一步較佳。增感色素可以單獨使用1種,亦可以同時使用2種以上。When the photosensitive resin composition of the present invention contains a sensitizing dye, the content of the sensitizing dye is preferably 0.01-20% by mass relative to the total solid content of the photosensitive resin composition of the present invention, and 0.1-15% by mass More preferably, 0.5 to 10% by mass is still more preferable. The sensitizing dye may be used singly or in combination of two or more.

<<鏈轉移劑>> 本發明的感光性樹脂組成物可以含有鏈轉移劑。鏈轉移劑例如於高分子詞典第三版(高分子學會(The Society of Polymer Science, Japan)編,2005年)683-684頁中被定義。作為鏈轉移劑,例如使用於分子內具有SH、PH、SiH及GeH之化合物組。該等向低活性自由基供給氫而產生自由基,或者經氧化之後,藉由去質子而可產生自由基。尤其,能夠較佳地使用硫醇化合物(例如,2-巰基苯并咪唑類、2-巰基苯并噻唑類、2-巰基聚苯并㗁唑類、3-巰基三唑類、5-巰基四唑類等)。<<Chain transfer agent>> The photosensitive resin composition of this invention may contain a chain transfer agent. The chain transfer agent is defined, for example, in pages 683-684 of the third edition of the Polymer Dictionary (Edited by The Society of Polymer Science (Japan), 2005). As the chain transfer agent, for example, a compound group having SH, PH, SiH, and GeH in the molecule is used. These low-activity free radicals are supplied with hydrogen to generate free radicals, or after oxidation, free radicals can be generated by deprotonation. In particular, thiol compounds (for example, 2-mercaptobenzimidazoles, 2-mercaptobenzothiazoles, 2-mercaptopolybenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetrazoles, etc.) can be preferably used. Azoles, etc.).

當本發明的感光性樹脂組成物含有鏈轉移劑時,鏈轉移劑的含量相對於本發明的感光性樹脂組成物的總固體成分100質量份係0.01~20質量份為較佳,1~10質量份為更佳,1~5質量份為進一步較佳。鏈轉移劑可以為僅1種,亦可以為2種以上。當鏈轉移劑為2種以上時,其合計範圍係上述範圍為較佳。When the photosensitive resin composition of the present invention contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the total solid content of the photosensitive resin composition of the present invention, 1 to 10 Parts by mass is more preferable, and 1 to 5 parts by mass is still more preferable. The chain transfer agent may be only one type or two or more types. When there are two or more chain transfer agents, the total range is preferably the above range.

<<界面活性劑>> 從進一步提高塗佈性的觀點考慮,本發明的感光性樹脂組成物中可以添加各種界面活性劑。作為界面活性劑,能夠使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽酮系界面活性劑等各種界面活性劑。又,下述界面活性劑亦較佳。 [化學式30]

Figure 02_image059
<<Surfactant>> From the viewpoint of further improving coating properties, various surfactants can be added to the photosensitive resin composition of the present invention. As the surfactant, various surfactants such as fluorine-based surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, and silicone-based surfactants can be used. In addition, the following surfactants are also preferable. [Chemical formula 30]
Figure 02_image059

當本發明的感光性樹脂組成物具有界面活性劑時,界面活性劑的含量相對於本發明的感光性樹脂組成物的總固體成分係0.001~2.0質量%為較佳,更佳為0.005~1.0質量%。界面活性劑可以為僅1種,亦可以為2種以上。當界面活性劑為2種以上時,其合計範圍係上述範圍為較佳。When the photosensitive resin composition of the present invention has a surfactant, the content of the surfactant is preferably 0.001 to 2.0% by mass with respect to the total solid content of the photosensitive resin composition of the present invention, more preferably 0.005 to 1.0 quality%. The surfactant may be only one type or two or more types. When there are two or more surfactants, the total range is preferably the above-mentioned range.

<<高級脂肪酸衍生物>> 為了防止因氧引起之聚合抑制,本發明的感光性樹脂組成物中可以添加如二十二酸或二十二酸醯胺那樣的高級脂肪酸衍生物而於塗佈後的乾燥過程中局部存在於組成物的表面。 當本發明的感光性樹脂組成物含有高級脂肪酸衍生物時,高級脂肪酸衍生物的含量相對於本發明的感光性樹脂組成物的總固體成分係0.1~10質量%為較佳。高級脂肪酸衍生物可以為僅1種,亦可以為2種以上。當高級脂肪酸衍生物為2種以上時,其合計範圍係上述範圍為較佳。<<Higher fatty acid derivatives>> In order to prevent polymerization inhibition due to oxygen, a higher fatty acid derivative such as behenic acid or behenic acid amide may be added to the photosensitive resin composition of the present invention, which is partially present in the drying process after coating. The surface of the composition. When the photosensitive resin composition of the present invention contains a higher fatty acid derivative, the content of the higher fatty acid derivative is preferably 0.1 to 10% by mass relative to the total solid content of the photosensitive resin composition of the present invention. There may be only one type of higher fatty acid derivative, or two or more types. When there are two or more higher fatty acid derivatives, the total range is preferably the above range.

<關於其他含有物質的限制> 從塗佈面狀的觀點考慮,本發明的感光性樹脂組成物的水分含量小於5質量%為較佳,小於1質量%為更佳,小於0.6質量%為進一步較佳。<Restrictions on other contained substances> From the viewpoint of the coating surface, the moisture content of the photosensitive resin composition of the present invention is preferably less than 5% by mass, more preferably less than 1% by mass, and more preferably less than 0.6% by mass.

從絕緣性的觀點考慮,本發明的感光性樹脂組成物的金屬含量小於5質量ppm(parts per million(百萬分率))為較佳,小於1質量ppm為更佳,小於0.5質量ppm為進一步較佳。作為金屬,可舉出鈉、鉀、鎂、鈣、鐵、鉻、鎳等。當包含複數種金屬時,該等金屬的合計為上述範圍為較佳。 又,作為減少意外包含於本發明的感光性樹脂組成物之金屬雜質之方法,能夠舉出作為構成本發明的感光性樹脂組成物之原料而選擇金屬含量較少的原料,對構成本發明的感光性樹脂組成物之原料進行濾波器過濾,用聚四氟乙烯對裝置內進行內襯而於盡可能抑制了污染之條件下進行蒸餾等方法。From the viewpoint of insulation, the photosensitive resin composition of the present invention preferably has a metal content of less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and less than 0.5 mass ppm. Further better. Examples of metals include sodium, potassium, magnesium, calcium, iron, chromium, nickel, and the like. When a plurality of metals are contained, the total of these metals is preferably in the above range. In addition, as a method for reducing the metal impurities accidentally included in the photosensitive resin composition of the present invention, it is possible to exemplify the selection of a raw material with a small metal content as the raw material constituting the photosensitive resin composition of the present invention. The raw material of the photosensitive resin composition is filtered by a filter, the inside of the device is lined with polytetrafluoroethylene, and distillation is carried out under the condition of suppressing pollution as much as possible.

若考慮作為半導體材料的用途,且從配線腐蝕性的觀點考慮,本發明的感光性樹脂組成物中,鹵素原子的含量小於500質量ppm為較佳,小於300質量ppm為更佳,小於200質量ppm為進一步較佳。其中,以鹵素離子的狀態存在者係小於5質量ppm為較佳,小於1質量ppm為更佳,小於0.5質量ppm為進一步較佳。作為鹵素原子,可舉出氯原子及溴原子。氯原子及溴原子或氯離子及溴離子的合計分別為上述範圍為較佳。Considering the use as a semiconductor material and from the viewpoint of wiring corrosion, the photosensitive resin composition of the present invention preferably has a halogen atom content of less than 500 mass ppm, more preferably less than 300 mass ppm, and less than 200 mass ppm. ppm is more preferable. Among them, less than 5 mass ppm is preferable in the state of halogen ion, less than 1 mass ppm is more preferable, and less than 0.5 mass ppm is more preferable. Examples of the halogen atom include a chlorine atom and a bromine atom. It is preferable that the total of the chlorine atom and the bromine atom or the chlorine ion and the bromine ion be in the above-mentioned ranges.

作為本發明的感光性樹脂組成物的收容容器能夠使用以往公知的收容容器。又,作為收容容器,以抑制雜質混入原材料或組成物中為目的,使用由6種6層樹脂構成容器內壁之多層瓶、將6種樹脂形成為7層結構之瓶亦為較佳。作為該等容器,例如可舉出日本特開2015-123351號公報中所記載之容器。As the storage container of the photosensitive resin composition of the present invention, a conventionally known storage container can be used. In addition, as a storage container, for the purpose of suppressing the mixing of impurities into the raw material or composition, it is also preferable to use a multilayer bottle in which the inner wall of the container is composed of 6 types of 6-layer resins, and a bottle in which 6 types of resins are formed into a 7-layer structure. Examples of these containers include those described in JP 2015-123351 A.

<組成物的製備> 本發明的感光性樹脂組成物能夠藉由將上述各成分進行混合而製備。混合方法並無特別限定,能夠藉由以往公知的方法來進行。 又,以去除組成物中的垃圾或微粒等異物為目的,進行使用過濾器之過濾為較佳。過濾器孔徑係1μm以下為較佳,0.5μm以下為更佳,0.1μm以下為進一步較佳。過濾器的材質係聚四氟乙烯、聚乙烯或尼龍為較佳。過濾器可以使用用有機溶劑預先清洗者。過濾器的過濾步驟中,可以並聯或串聯複數種過濾器而使用。當使用複數種過濾器時,可以組合使用孔徑或材質不同之過濾器。又,可以將各種材料過濾多次。當過濾多次時,可以為循環過濾。又,可以於加壓之後進行過濾。當於加壓之後進行過濾時,進行加壓之壓力係0.05MPa以上且0.3MPa以下為較佳。 除了使用過濾器之過濾以外,還可以進行使用了吸附材料之雜質去除處理。還可以組合過濾器過濾和使用了吸附材料之雜質去除處理。作為吸附材料,能夠使用公知的吸附材料。例如,可舉出矽膠、沸石等無機系吸附材料、活性碳等有機系吸附材料。<Preparation of composition> The photosensitive resin composition of the present invention can be prepared by mixing the above-mentioned components. The mixing method is not particularly limited, and it can be performed by a conventionally known method. In addition, for the purpose of removing foreign substances such as garbage or particles in the composition, it is preferable to perform filtration using a filter. The filter pore diameter is preferably 1 μm or less, more preferably 0.5 μm or less, and even more preferably 0.1 μm or less. The material of the filter is preferably polytetrafluoroethylene, polyethylene or nylon. The filter can be cleaned in advance with an organic solvent. In the filtration step of the filter, multiple filters can be used in parallel or in series. When multiple filters are used, filters with different pore sizes or materials can be used in combination. In addition, various materials can be filtered multiple times. When filtering for multiple times, it can be cyclic filtering. Furthermore, filtration may be performed after pressurization. When filtering is performed after pressurization, the pressurization pressure is preferably 0.05 MPa or more and 0.3 MPa or less. In addition to filtration using a filter, it can also be used to remove impurities using adsorbents. It can also be combined with filter filtration and impurity removal treatment using adsorbent materials. As the adsorbent, a known adsorbent can be used. For example, inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon can be cited.

<硬化膜、積層體、半導體裝置及該等的製造方法> 接著,對硬化膜、積層體、半導體裝置及該等的製造方法進行說明。 本發明的硬化膜藉由使本發明的感光性樹脂組成物硬化而成。本發明的硬化膜的膜厚例如能夠設為0.5μm以上,或者能夠設為1μm以上。又,作為上限值,能夠設為100μm以下,且還能夠設為30μm以下。<Cured film, laminate, semiconductor device, and manufacturing methods of these> Next, the cured film, the laminated body, the semiconductor device, and the manufacturing method thereof will be described. The cured film of the present invention is formed by curing the photosensitive resin composition of the present invention. The film thickness of the cured film of the present invention can be 0.5 μm or more, or can be 1 μm or more, for example. Moreover, as an upper limit, it can be 100 micrometers or less, and can also be 30 micrometers or less.

可以將本發明的硬化膜積層2層以上,進而積層3~7層來作為積層體。具有2層以上的本發明的硬化膜之種積層體係於硬化膜之間具有金屬層之態樣為較佳。該等金屬層可較佳地用作再配線層等金屬配線。Two or more layers of the cured film of the present invention can be laminated, and 3 to 7 layers can be laminated as a laminated body. It is preferable that the seed layer system of the cured film of the present invention having two or more layers has a metal layer between the cured films. These metal layers can be preferably used as metal wiring such as rewiring layers.

作為能夠應用本發明的硬化膜的領域,可舉出半導體裝置的絕緣膜、再配線層用層間絕緣膜、應力緩衝膜等。除此以外,可舉出密封薄膜、基板材料(撓性印刷電路板的基膜或蓋層、層間絕緣膜)或藉由蝕刻對如上述那樣的實際安裝用途的絕緣膜進行圖案形成之情況等。關於該等用途,例如,能夠參閱Science & Technology Co.,Ltd.“聚醯亞胺的高功能化和應用技術”2008年4月、柿本雅明/監修、CMC技術圖書館“聚醯亞胺材料的基礎和開發”2011年11月發行、日本聚醯亞胺・芳香族系高分子研究會/編“最新聚醯亞胺 基礎和應用”NTS,2010年8月等。As a field to which the cured film of this invention can be applied, the insulating film of a semiconductor device, the interlayer insulating film for rewiring layers, a stress buffer film, etc. are mentioned. In addition, examples include sealing films, substrate materials (base film or cap layer of flexible printed circuit boards, interlayer insulating films), or patterning of insulating films for actual mounting purposes by etching, etc. . For these uses, for example, you can refer to Science & Technology Co., Ltd. "High-functionalization and Application Technology of Polyimide" April 2008, Kakimoto Masaki/Supervisor, CMC Technical Library "Polyimide Materials The foundation and development of "Polyimine" issued in November 2011, Japan Polyimine and Aromatic Polymer Research Society/Edition "The latest polyimine basics and applications" NTS, August 2010, etc.

又,本發明中的硬化膜還能夠使用於膠印版面或網版版面等版面的製造、對成型部件的使用、電子、尤其微電子中的保護漆及介電層的製造等中。In addition, the cured film in the present invention can also be used in the production of offset printing plates or screen plates, the use of molded parts, and the production of protective paints and dielectric layers in electronics, especially microelectronics.

本發明的硬化膜的製造方法包括使用本發明的感光性樹脂組成物之情況。具體而言,至少包含以下的(a),包含(a)及(d)為較佳,包含(a)~(d)的步驟為更佳。 (a)將感光性樹脂組成物應用於基板而形成膜之膜形成步驟 (b)膜形成步驟之後,對膜進行曝光之曝光步驟 (c)對經曝光之感光性樹脂組成物層進行顯影處理之顯影步驟 (d)在80~450℃下對已顯影之感光性樹脂組成物進行加熱之加熱步驟 如該實施形態,藉由顯影之後進行加熱,能夠進而硬化經曝光之樹脂層。在該加熱步驟中,本發明的熱鹼產生劑發揮作用而得到充分的硬化性。The manufacturing method of the cured film of this invention includes the case where the photosensitive resin composition of this invention is used. Specifically, it includes at least the following (a), preferably including (a) and (d), and more preferably the step including (a) to (d). (A) Film formation step of applying photosensitive resin composition to a substrate to form a film (B) Exposure step of exposing the film after the film formation step (C) Development step of developing the exposed photosensitive resin composition layer (D) A heating step of heating the developed photosensitive resin composition at 80-450°C Like this embodiment, the exposed resin layer can be cured by heating after development. In this heating step, the thermal alkali generator of the present invention acts to obtain sufficient curability.

本發明的較佳的實施形態之積層體之製造方法包括本發明的硬化膜之製造方法。本實施形態的積層體之製造方法按照上述硬化膜之製造方法形成硬化膜之後,進而再次進行(a)的步驟或(a)~(c)的步驟、或者(a)~(d)的步驟。尤其,依次將上述各步驟進行複數次、例如2~5次(亦即,合計3~6次)為較佳。藉由如此對硬化膜進行積層,能夠形成積層體。本發明中尤其於設置有硬化膜之部分上側或硬化膜之間或該兩者中設置金屬層為較佳。另外,積層體的製造中,無需重複(a)~(d)的全部步驟,如上述,藉由進行複數次至少(a)、較佳為(a)~(c)或(a)~(d)的步驟,能夠得到硬化膜的積層體。 以下,對該等進行詳細說明。The manufacturing method of the laminated body of the preferable embodiment of this invention includes the manufacturing method of the cured film of this invention. The manufacturing method of the laminated body of this embodiment forms a cured film according to the above-mentioned manufacturing method of a cured film, and then performs step (a) or steps (a) to (c) or steps (a) to (d) again . In particular, it is preferable to sequentially perform the above-mentioned steps a plurality of times, for example, 2 to 5 times (that is, 3 to 6 times in total). By laminating the cured film in this way, a laminate can be formed. In the present invention, it is particularly preferable to provide a metal layer on the upper side of the part where the cured film is provided, between the cured films, or both. In addition, it is not necessary to repeat all the steps (a) to (d) in the production of the laminate. As mentioned above, by performing at least (a), preferably (a) to (c) or (a) to ( In the step d), a laminate of a cured film can be obtained. Hereinafter, these will be explained in detail.

<<膜形成步驟(層形成步驟)>> 本發明的較佳的實施形態之製造方法包括將感光性樹脂組成物應用於基板而形成膜(層狀)之膜形成步驟(層形成步驟)。 基板的種類能夠依用途而適當設定,但並無特別限制,可舉出矽、氮化矽、多晶矽、氧化矽、非晶矽等半導體製作基板、石英、玻璃、光學膜、陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等金屬基板、紙、SOG(Spin On Glass)、TFT(薄膜晶體管)陣列基板、等離子顯示面板(PDP)的電極板等。本發明中,尤其半導體製作基板為較佳,矽基板為更佳。 又,當於樹脂層的表面或金屬層的表面形成感光性樹脂組成物層時,樹脂層或金屬層成為基板。 作為將感光性樹脂組成物應用於基板之方法,塗佈為較佳。 具體而言,作為應用方法,可例示浸塗法、氣刀塗佈法、簾式塗佈法、線棒塗佈法、凹版塗佈法、擠壓塗佈法、噴塗法、旋塗法、狹縫塗佈法及噴墨法等。從感光性樹脂組成物層的厚度的均勻性的觀點考慮,更佳為旋塗法、狹縫塗佈法、噴塗法、噴墨法。依方法調整適當的固體成分濃度或塗佈條件,藉此能夠得到所希望的厚度的樹脂層。又,能夠依基板的形狀適當選擇塗佈方法,只要為晶圓等圓形基板,則旋塗法或噴塗法、噴墨法等為較佳,且只要為矩形基板,則狹縫塗佈法或噴塗法、噴墨法等為較佳。當為旋塗法時,例如能夠以500~2000rpm的轉速應用10秒鐘~1分鐘左右。<<Film forming step (layer forming step)>> The manufacturing method of the preferred embodiment of the present invention includes a film forming step (layer forming step) of applying a photosensitive resin composition to a substrate to form a film (layered). The type of substrate can be appropriately set according to the application, but is not particularly limited. Examples include semiconductor substrates such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical films, ceramic materials, and vapor-deposited films. , Magnetic film, reflective film, Ni, Cu, Cr, Fe and other metal substrates, paper, SOG (Spin On Glass), TFT (thin film transistor) array substrate, plasma display panel (PDP) electrode plate, etc. In the present invention, semiconductor substrates are particularly preferred, and silicon substrates are more preferred. Furthermore, when the photosensitive resin composition layer is formed on the surface of the resin layer or the surface of the metal layer, the resin layer or the metal layer becomes a substrate. As a method of applying the photosensitive resin composition to the substrate, coating is preferred. Specifically, as the application method, dip coating method, air knife coating method, curtain coating method, wire bar coating method, gravure coating method, extrusion coating method, spray coating method, spin coating method, Slit coating method and inkjet method, etc. From the viewpoint of the uniformity of the thickness of the photosensitive resin composition layer, a spin coating method, a slit coating method, a spray coating method, and an inkjet method are more preferable. By adjusting the appropriate solid content concentration or coating conditions according to the method, a resin layer with a desired thickness can be obtained. In addition, the coating method can be appropriately selected according to the shape of the substrate. As long as it is a round substrate such as a wafer, spin coating, spray coating, inkjet, etc. are preferred, and as long as it is a rectangular substrate, the slit coating method Or spraying method, inkjet method, etc. are preferable. In the case of the spin coating method, for example, it can be applied at a rotation speed of 500 to 2000 rpm for about 10 seconds to 1 minute.

<<乾燥步驟>> 本發明的製造方法還可以包括於形成感光性樹脂組成物層之後,且膜形成佈置(層形成佈置)之後,為了去除溶劑而進行乾燥之步驟。較佳的乾燥溫度係50~150℃,70~130℃為更佳,90~110℃為進一步較佳。作為乾燥時間,例示30秒鐘~20分鐘,1分鐘~10分鐘為較佳,3分鐘~7分鐘為更佳。<<Drying step>> The manufacturing method of the present invention may further include a step of drying in order to remove the solvent after forming the photosensitive resin composition layer and after the film formation arrangement (layer formation arrangement). The preferred drying temperature is 50-150°C, more preferably 70-130°C, and even more preferably 90-110°C. As the drying time, 30 seconds to 20 minutes are exemplified, preferably 1 minute to 10 minutes, and more preferably 3 minutes to 7 minutes.

<<曝光步驟>> 本發明的製造方法可以包括曝光步驟,對上述感光性樹脂組成物層進行曝光。曝光量於能夠使感光性樹脂組成物硬化之範圍內無特別限定,例如,以波長365nm下的曝光能量換算照射100~10000mJ/cm2 為較佳,照射200~8000mJ/cm2 為更佳。 曝光波長能夠於190~1000nm的範圍內適當設定,240~550nm為較佳。 關於曝光波長,若以與光源的關係描述,則可舉出(1)半導體雷射(波長830nm、532nm、488nm、405nm etc.)、(2)金屬鹵化物燈、(3)高壓水銀燈、g射線(波長436nm)、h射線(波長405nm)、i射線(波長365nm)、寬(g、h、i射線的3波長)、(4)準分子雷射、KrF準分子雷射(波長248nm)、ArF準分子雷射(波長193nm)、F2準分子雷射(波長157nm)、(5)極紫外線;EUV(波長13.6nm)、(6)電子束等。關於本發明中的感光性樹脂組成物,尤其基於高壓水銀燈之曝光為較佳,其中,基於i射線之曝光為較佳。藉此,尤其可得到高的曝光靈敏度。<<Exposure Step>> The manufacturing method of the present invention may include an exposure step to expose the photosensitive resin composition layer. The exposure amount is not particularly limited within the range that can harden the photosensitive resin composition. For example, it is preferable to irradiate 100 to 10,000 mJ/cm 2 in terms of exposure energy at a wavelength of 365 nm, and more preferably to irradiate 200 to 8000 mJ/cm 2 . The exposure wavelength can be appropriately set in the range of 190-1000 nm, preferably 240-550 nm. Regarding the exposure wavelength, if it is described in terms of the relationship with the light source, (1) semiconductor laser (wavelength 830nm, 532nm, 488nm, 405nm etc.), (2) metal halide lamp, (3) high pressure mercury lamp, g Ray (wavelength 436nm), h-ray (wavelength 405nm), i-ray (wavelength 365nm), wide (3 wavelengths of g, h, and i rays), (4) excimer laser, KrF excimer laser (wavelength 248nm) , ArF excimer laser (wavelength 193nm), F2 excimer laser (wavelength 157nm), (5) extreme ultraviolet; EUV (wavelength 13.6nm), (6) electron beam, etc. Regarding the photosensitive resin composition in the present invention, exposure based on a high-pressure mercury lamp is particularly preferred, and exposure based on i-rays is particularly preferred. In this way, particularly high exposure sensitivity can be obtained.

<<顯影處理步驟>> 本發明的製造方法可以包括顯影處理步驟,對經曝光之感光性樹脂組成物層進行顯影處理。藉由進行顯影,未曝光之部分(非曝光部)被去除。關於顯影方法,只要能夠形成所希望的圖案,則無特別限定,例如,能夠採用旋覆浸沒、噴霧、浸漬、超聲波等顯影方法。 顯影使用顯影液來進行。關於顯影液,只要可去除未曝光之部分(非曝光部),則能夠使用而無特別限制。顯影液包含有機溶劑為較佳,顯影液包含90%以上的有機溶劑為更佳。本發明中,顯影液包含ClogP值係-1~5的有機溶劑為較佳,包含ClogP值係0~3的有機溶劑為更佳。ClogP值能夠藉由ChemBioDraw(化學生物圖)輸入結構式而作為計算值來求出。 作為有機溶劑,能夠較佳地使用在上述<溶劑>的項中所例示者。 本發明中,尤其環戊酮、γ-丁內酯為較佳,環戊酮為更佳。 顯影液的50質量%以上係有機溶劑為較佳,70質量%以上係有機溶劑為更佳,90質量%以上係有機溶劑為進一步較佳。又,顯影液中100質量%者可以為有機溶劑。<<Development processing steps>> The manufacturing method of the present invention may include a development process step to perform a development process on the exposed photosensitive resin composition layer. By developing, the unexposed part (non-exposed part) is removed. The development method is not particularly limited as long as a desired pattern can be formed. For example, development methods such as spin immersion, spray, immersion, and ultrasonic can be used. The development is performed using a developer. Regarding the developer, as long as the unexposed part (non-exposed part) can be removed, it can be used without particular limitation. It is preferable that the developer contains an organic solvent, and it is more preferable that the developer contains 90% or more of an organic solvent. In the present invention, the developer preferably contains an organic solvent having a ClogP value of -1 to 5, and more preferably an organic solvent having a ClogP value of 0 to 3. The ClogP value can be calculated as a calculated value by inputting the structural formula in ChemBioDraw (Chemical Biological Diagram). As the organic solvent, those exemplified in the item of the above-mentioned <solvent> can be preferably used. In the present invention, cyclopentanone and γ-butyrolactone are particularly preferred, and cyclopentanone is more preferred. An organic solvent of 50% by mass or more of the developer is preferable, an organic solvent of 70% by mass or more is more preferable, and an organic solvent of 90% by mass or more is more preferable. In addition, 100% by mass in the developer may be an organic solvent.

作為顯影時間,10秒鐘~5分鐘為較佳。顯影時的顯影液的溫度並無特別限定,通常能夠於20~40℃下進行。 於使用了顯影液之處理之後,進而可以進行沖洗。沖洗以與顯影液不同之溶劑進行為較佳。例如,能夠使用感光性樹脂組成物中所含有之溶劑進行沖洗。沖洗時間係5秒鐘~1分鐘為較佳。As the development time, 10 seconds to 5 minutes are preferred. The temperature of the developing solution during development is not particularly limited, and it can usually be performed at 20 to 40°C. After treatment with developer, it can be rinsed. Rinsing is preferably performed with a solvent different from the developer. For example, it can be rinsed using the solvent contained in the photosensitive resin composition. Preferably, the washing time is 5 seconds to 1 minute.

<<加熱步驟>> 本發明的製造方法包括於膜形成步驟(層形成步驟)、乾燥步驟或顯影步驟之後進行加熱之步驟為較佳。加熱步驟中,進行聚合物前驅物的環化反應。此時,特定熱鹼產生劑不會阻礙感光性而能夠實現良好的曝光顯影性。而且,藉由對顯影後所殘留之樹脂圖案進行加熱,特定熱鹼產生劑放出鹼而迅速且充分地進行基於樹脂的環化之硬化。 作為加熱步驟中的層的加熱溫度(最高加熱溫度),50℃以上為較佳,80℃以上為更佳,140℃以上為進一步較佳,150℃以上為更進一步較佳,160℃以上為更進一步較佳,170℃以上為進一步更較佳。作為上限,500℃以下為較佳,450℃以下為更佳,350℃以下為進一步較佳,250℃以下為更進一步較佳,220℃以下為更進一步較佳,200℃以下為進一步更較佳。 關於加熱,從加熱開始時的溫度至最高加熱溫度以1~12℃/分鐘的升溫速度進行為較佳,2~10℃/分鐘為更佳,3~10℃/分鐘為進一步較佳。藉由將升溫速度設為1℃/分鐘以上,能夠確保生產率的同時防止鹼的過度揮發,藉由將升溫速度設為12℃/分鐘以下,能夠緩和硬化膜的殘存應力。 加熱開始時的溫度係20℃~150℃為較佳,20℃~130℃為更佳,25℃~120℃為進一步較佳。加熱開始時的溫度是指,開始加熱至最高加熱溫度之步驟時的溫度。例如,將感光性樹脂組成物應用於基板上之後,使其乾燥時,為該乾燥後膜(層)的溫度,例如,從比感光性樹脂組成物中所含有之溶劑的沸點低30~200℃的溫度逐漸升溫為較佳。 加熱時間(最高加熱溫度下的加熱時間)係10~360分鐘為較佳,20~300分鐘為更佳,30~240分鐘為進一步較佳。 尤其形成多層積層體時,從硬化膜的層間的密接性的觀點考慮,於180℃~320℃的加熱溫度下進行加熱為較佳,於180℃~260℃下進行加熱為更佳。其理由雖不確定,但認為其原因如下,亦即藉由設為該溫度,層間的聚合物前驅物的乙炔基彼此進行交聯反應。<<Heating step>> The manufacturing method of the present invention preferably includes a step of heating after the film formation step (layer formation step), drying step, or development step. In the heating step, the cyclization reaction of the polymer precursor proceeds. In this case, the specific thermal alkali generator does not hinder photosensitivity and can achieve good exposure and developability. In addition, by heating the resin pattern remaining after development, the specific thermal alkali generator releases alkali to rapidly and fully perform curing by cyclization of the resin. As the heating temperature (maximum heating temperature) of the layer in the heating step, 50°C or higher is preferred, 80°C or higher is more preferred, 140°C or higher is even more preferred, 150°C or higher is even more preferred, and 160°C or higher is It is even more preferable, and 170°C or higher is still more preferable. As the upper limit, 500°C or less is preferred, 450°C or less is more preferred, 350°C or less is even more preferred, 250°C or less is even more preferred, 220°C or less is even more preferred, and 200°C or less is even more preferred good. Regarding heating, it is preferable to perform heating at a temperature increase rate of 1-12°C/min from the temperature at the start of heating to the maximum heating temperature, more preferably 2-10°C/min, and still more preferably 3-10°C/min. By setting the heating rate to 1°C/min or more, it is possible to prevent excessive volatilization of alkali while ensuring productivity, and by setting the heating rate to 12°C/min or less, the residual stress of the cured film can be alleviated. The temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, and more preferably 25°C to 120°C. The temperature at the start of heating refers to the temperature at the start of the step of heating to the highest heating temperature. For example, when the photosensitive resin composition is applied to the substrate and dried, the temperature of the film (layer) after drying, for example, is 30 to 200 lower than the boiling point of the solvent contained in the photosensitive resin composition It is better to increase the temperature gradually at °C. The heating time (heating time at the highest heating temperature) is preferably 10 to 360 minutes, more preferably 20 to 300 minutes, and more preferably 30 to 240 minutes. In particular, when forming a multilayer laminate, from the viewpoint of the adhesion between the layers of the cured film, it is preferable to heat at a heating temperature of 180°C to 320°C, and more preferably to heat at 180°C to 260°C. Although the reason is not certain, it is thought that the reason is as follows. That is, by setting the temperature at this temperature, the ethynyl groups of the polymer precursors between the layers undergo a crosslinking reaction.

加熱可以分階段進行。作為例,可以以3℃/分鐘從25℃升溫至180℃,且於180℃下保持60分鐘,以2℃/分鐘從180℃升溫至200℃,且於200℃下保持120分鐘之前處理步驟。作為前處理步驟之加熱溫度係100~200℃為較佳,110~190℃為更佳,120~185℃為進一步較佳。該前處理步驟中,如美國專利9159547號公報中所記載那樣照射紫外線的同時進行處理亦為較佳。藉由該等前處理步驟能夠提高膜的特性。前處理步驟於10秒鐘~2小時左右的短時間內進行即可,15秒鐘~30分鐘為更佳。前處理可以是兩階段以上的步驟,例如可以於100~150℃的範圍內進行前處理步驟1,然後於150~200℃的範圍內進行前處理步驟2。 進而,可以於加熱之後進行冷卻,作為該情況下的冷卻速度,1~5℃/分鐘為較佳。Heating can be carried out in stages. As an example, you can increase the temperature from 25°C to 180°C at 3°C/min, and keep it at 180°C for 60 minutes, and increase the temperature from 180°C to 200°C at 2°C/min, and keep it at 200°C for 120 minutes. . The heating temperature as the pretreatment step is preferably 100 to 200°C, more preferably 110 to 190°C, and further preferably 120 to 185°C. In this pretreatment step, it is also preferable to perform treatment while irradiating ultraviolet rays as described in U.S. Patent No. 9159547. The characteristics of the film can be improved by these pretreatment steps. The pretreatment step can be performed in a short time of about 10 seconds to 2 hours, and 15 seconds to 30 minutes is more preferable. The pretreatment may be a two-stage or more step. For example, the pretreatment step 1 may be performed in the range of 100 to 150°C, and then the pretreatment step 2 may be performed in the range of 150 to 200°C. Furthermore, cooling may be performed after heating, and the cooling rate in this case is preferably 1 to 5°C/min.

關於加熱步驟,從防止聚合物前驅物的分解的方面考慮,藉由使氮、氦、氬等惰性氣體流過等,於低氧濃度的環境下進行為較佳。氧濃度係50ppm(體積比)以下為較佳,20ppm(體積比)以下為更佳。Regarding the heating step, from the viewpoint of preventing the decomposition of the polymer precursor, it is preferable to perform it in a low oxygen concentration environment by flowing inert gas such as nitrogen, helium, and argon. The oxygen concentration is preferably 50 ppm (volume ratio) or less, and more preferably 20 ppm (volume ratio) or less.

<<金屬層形成步驟>> 本發明的製造方法包括於顯影處理後的感光性樹脂組成物層的表面形成金屬層之(e)金屬層形成步驟為較佳。 作為金屬層,無特別限定,能夠使用現有的金屬種類,例示銅、鋁、鎳、釩、鈦、鉻、鈷、金及鎢,銅及鋁為更佳,銅為進一步較佳。 金屬層的形成方法無特別限定,能夠應用現有的方法。例如,能夠使用日本特開2007-157879號公報、日本特表2001-521288號公報、日本特開2004-214501號公報、日本特開2004-101850號公報中所記載之方法。例如,可考慮光微影、剝離、電解電鍍、無電解電鍍、蝕刻、印刷及組合該等而成之方法等。更具體而言,可舉出組合濺射、光微影及蝕刻而成之圖案化方法、組合光微影與電解電鍍而成之圖案化方法。 作為金屬層的厚度,於最厚的壁厚部係0.1~50μm為較佳,1~10μm為更佳。<<Steps of forming metal layer>> The manufacturing method of the present invention preferably includes (e) a metal layer forming step of forming a metal layer on the surface of the photosensitive resin composition layer after development. The metal layer is not particularly limited, and existing metal types can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, and tungsten. Copper and aluminum are more preferable, and copper is more preferable. The method of forming the metal layer is not particularly limited, and existing methods can be applied. For example, the methods described in Japanese Patent Application Publication No. 2007-157879, Japanese Patent Application Publication No. 2001-521288, Japanese Patent Application Publication No. 2004-214501, and Japanese Patent Application Publication No. 2004-101850 can be used. For example, methods such as photolithography, peeling, electrolytic plating, electroless plating, etching, printing, and combinations can be considered. More specifically, a patterning method combining sputtering, photolithography, and etching, and a patterning method combining photolithography and electrolytic plating can be cited. The thickness of the metal layer is preferably 0.1-50 μm at the thickest part, and more preferably 1-10 μm.

<<積層步驟>> 本發明的製造方法還包含積層步驟為較佳。 積層步驟係指包含在硬化膜(樹脂層)或金屬層的表面再次依次進行(a)膜形成步驟(層形成步驟)、(b)曝光步驟、(c)顯影處理步驟、(d)加熱步驟之一系列步驟。其中,(d)加熱步驟可以設為在積層的最後或中間一併進行之樣態。亦即,可以設為藉由重複進行規定次數的(a)~(c)的步驟之後進行(d)的加熱,對已積層之感光性樹脂組成物層一併硬化之樣態。又,(c)顯影步驟之後亦可以包括(e)金屬層形成步驟,此時可以每次進行(d)的加熱,亦可以在積層規定次數之後一併進行(d)的加熱。積層步驟中還可以適當包括上述乾燥步驟和加熱步驟等是毋庸置疑的。 當於積層步驟之後進而進行積層步驟時,可以於上述加熱步驟之後,且於上述曝光步驟之後或於上述金屬層形成步驟之後,進而進行表面活化處理步驟。作為表面活化處理,例示電漿處理。 上述積層步驟進行2~5次為較佳,進行3~5次為更佳。 例如,如樹脂層/金屬層/樹脂層/金屬層/樹脂層/金屬層那樣的樹脂層為3層以上且7層以下的結構為較佳,3層以上且5層以下為進一步較佳。 亦即,本發明中,尤其以在設置有金屬層之後進而覆蓋上述金屬層的方式形成上述感光性樹脂組成物的硬化膜(樹脂層)之樣態為較佳。具體而言,可舉出依次重複(a)膜形成步驟、(b)曝光步驟、(c)顯影步驟、(e)金屬層形成步驟、(d)加熱步驟之樣態或者(a)依次重複膜形成步驟、(b)曝光步驟、(c)顯影步驟、(e)金屬層形成步驟並在最後或中間一併設置(d)加熱步驟之樣態。藉由交替進行對感光性樹脂組成物層(樹脂)進行積層之積層步驟和金屬層形成步驟,能夠交替積層感光性樹脂組成物層(樹脂層)和金屬層。<<Layering Step>> Preferably, the manufacturing method of the present invention further includes a layering step. The layering step refers to the step of performing (a) film formation step (layer formation step), (b) exposure step, (c) development treatment step, and (d) heating step again in sequence on the surface of the cured film (resin layer) or metal layer A series of steps. Among them, the heating step (d) may be carried out at the end or in the middle of the build-up. That is, it is possible to set the laminated photosensitive resin composition layer to harden collectively by repeating the steps (a) to (c) a predetermined number of times and then heating (d). In addition, after the (c) development step, (e) the metal layer forming step may be included. In this case, the heating of (d) may be performed each time, or the heating of (d) may be performed after a predetermined number of laminations. It goes without saying that the above-mentioned drying step, heating step, etc. can also be appropriately included in the layering step. When the layering step is further performed after the layering step, the surface activation treatment step may be further performed after the heating step, and after the exposure step, or after the metal layer forming step. As the surface activation treatment, plasma treatment is exemplified. The above-mentioned layering step is preferably performed 2 to 5 times, and more preferably 3 to 5 times. For example, a resin layer such as a resin layer/metal layer/resin layer/metal layer/resin layer/metal layer is preferably a structure having 3 layers or more and 7 layers or less, and more preferably 3 layers or more and 5 layers or less. That is, in the present invention, it is particularly preferable to form the cured film (resin layer) of the photosensitive resin composition so as to cover the metal layer after the metal layer is provided. Specifically, it can be mentioned that (a) film formation step, (b) exposure step, (c) development step, (e) metal layer formation step, (d) heating step are repeated in sequence, or (a) repeated in sequence The film formation step, (b) exposure step, (c) development step, (e) metal layer formation step, and (d) heating step are set at the end or in the middle. By alternately performing the laminating step of laminating the photosensitive resin composition layer (resin) and the metal layer forming step, the photosensitive resin composition layer (resin layer) and the metal layer can be alternately laminated.

本發明中亦揭示具有本發明的硬化膜或積層體之半導體裝置。作為將本發明的感光性樹脂組成物使用在再配線層用層間絕緣膜的形成中之半導體裝置的具體例,能夠參閱日本特開2016-027357號公報的0213~0218段的記載及圖1的記載,並將該等內容編入本說明書中。 [實施例]The present invention also discloses a semiconductor device having the cured film or laminate of the present invention. As a specific example of a semiconductor device in which the photosensitive resin composition of the present invention is used in the formation of an interlayer insulating film for a rewiring layer, refer to the description in paragraphs 0213 to 0218 of JP 2016-027357 A and FIG. 1 Record and incorporate such content into this manual. [Example]

以下,舉出實施例對本發明進行進一步詳細的說明。以下的實施例中所示出之材料、使用量、比例、處理內容、處理步驟等於不脫離本發明的宗旨之範圍內,能夠適當進行變更。因此,本發明的範圍並不限定於以下所示之具體例。除非另有說明,則“份”、“%”為質量基準。Hereinafter, the present invention will be described in further detail with examples. The materials, usage amounts, ratios, processing contents, and processing steps shown in the following examples are within the scope not departing from the spirit of the present invention, and can be appropriately changed. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise specified, "parts" and "%" are quality standards.

<合成例1> [源自均苯四甲酸二酐、4,4’-二胺基二苯醚及苄醇的聚醯亞胺前驅物(A-1:不具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 使14.06g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下乾燥12小時)和14.22g(131.58毫莫耳)的苄醇懸浮於50mL的N-甲基吡咯啶酮,並用分子篩進行了乾燥。於100℃下將懸浮液加熱了3小時。加熱後經過幾分鐘之後得到了透明的溶液。將反應混合物冷卻至室溫,並添加了21.43g(270.9毫莫耳)的吡啶及90mL的N-甲基吡咯啶酮。接著,將反應混合物冷卻至-10℃,將溫度保持在-10±4℃的同時經10分鐘添加了16.12g(135.5毫莫耳)的SOCl2 。添加SOCl2 期間,黏度得以增加。用50mL的N-甲基吡咯啶酮稀釋之後,於室溫下將反應混合物攪拌了2小時。接著,於-5~0℃下經20分鐘向反應混合物滴加了將11.08g(58.7毫莫耳)的4,4’-二胺基二苯醚溶解於100mL的N-甲基吡咯啶酮而成之溶液。接著,於0℃下使反應混合物反應1小時之後,添加70g的乙醇,並於室溫下攪拌了一晚。接著,使聚醯亞胺前驅物於5升水中沉澱,以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。藉由過濾去除聚醯亞胺前驅物,於4升水中再次攪拌30分鐘且再次進行了過濾。接著,於減壓下,以45℃將所得到之聚醯亞胺前驅物乾燥了3天。該聚醯亞胺前驅物的重量平均分子量為18,000。<Synthesis Example 1> [Polyimine precursor derived from pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, and benzyl alcohol (A-1: without radical polymerizable group) Synthesis of polyimide precursor] 14.06g (64.5 millimoles) of pyromellitic dianhydride (dried at 140°C for 12 hours) and 14.22g (131.58 millimoles) of benzyl alcohol were suspended in 50 mL The N-methylpyrrolidone was dried with molecular sieves. The suspension was heated at 100°C for 3 hours. After a few minutes of heating, a clear solution was obtained. The reaction mixture was cooled to room temperature, and 21.43 g (270.9 millimoles) of pyridine and 90 mL of N-methylpyrrolidone were added. Next, the reaction mixture was cooled to -10°C, and 16.12 g (135.5 millimoles) of SOCl 2 was added over 10 minutes while maintaining the temperature at -10±4°C. During the addition of SOCl 2 , the viscosity increased. After dilution with 50 mL of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, 11.08 g (58.7 millimoles) of 4,4'-diaminodiphenyl ether was dissolved in 100 mL of N-methylpyrrolidone into the reaction mixture at -5~0°C for 20 minutes. From the solution. Next, after reacting the reaction mixture at 0°C for 1 hour, 70 g of ethanol was added and stirred at room temperature overnight. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimine precursor mixture was stirred for 15 minutes at a speed of 5000 rpm. The polyimide precursor was removed by filtration, stirred again in 4 liters of water for 30 minutes and filtered again. Next, under reduced pressure, the obtained polyimide precursor was dried at 45°C for 3 days. The weight average molecular weight of the polyimide precursor was 18,000.

A-1 [化學式31]

Figure 02_image061
A-1 [Chemical formula 31]
Figure 02_image061

<合成例2> [源自均苯四甲酸二酐、4,4’-二胺基二苯醚及甲基丙烯酸-2-羥基乙酯的聚醯亞胺前驅物(A-2:具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 將14.06g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下乾燥了12小時)、16.8g(129毫莫耳)的甲基丙烯酸-2-羥基乙酯、0.05g的對苯二酚、20.4g的吡啶(258毫莫耳)及100g的二甘醇二甲醚(二乙二醇二甲醚)進行混合,於60℃的溫度下攪拌18小時而製造了均苯四甲酸與甲基丙烯酸-2-羥基乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基二苯醚轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了聚醯亞胺前驅物。該聚醯亞胺前驅物的重量平均分子量為19,000。<Synthesis Example 2> [Polyimide precursor derived from pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, and 2-hydroxyethyl methacrylate (A-2: Free [Synthesis of polyimide precursors based on polymerizable groups]] 14.06g (64.5 millimoles) of pyromellitic dianhydride (dried at 140°C for 12 hours), 16.8g (129 millimoles) ) 2-hydroxyethyl methacrylate, 0.05g hydroquinone, 20.4g pyridine (258 millimoles) and 100g diglyme (diethylene glycol dimethyl ether) are mixed , Stirred at a temperature of 60°C for 18 hours to produce a diester of pyromellitic acid and 2-hydroxyethyl methacrylate. Then, after chlorinating the obtained diester with SOCl 2, it was converted into a polyimide precursor with 4,4'-diaminodiphenyl ether in the same way as in Synthesis Example 1, and compared with Synthesis Example 1. 1 The same method was used to obtain the polyimide precursor. The weight average molecular weight of the polyimide precursor was 19,000.

A-2 [化學式32]

Figure 02_image063
A-2 [Chemical formula 32]
Figure 02_image063

<合成例3> [源自4,4’-氧二鄰苯二甲酸酐、4,4’-二胺基二苯醚及甲基丙烯酸-2-羥基乙酯的聚醯亞胺前驅物(A-3:具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)的4,4’-氧二鄰苯二甲酸酐(於140℃下乾燥了12小時)、16.8g(129毫莫耳)的甲基丙烯酸-2-羥基乙酯、0.05g的對苯二酚、20.4g的吡啶(258毫莫耳)的吡啶及100g的二甘醇二甲醚進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸酐與甲基丙烯酸-2-羥基乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基二苯醚轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了聚醯亞胺前驅物。該聚醯亞胺前驅物的重量平均分子量為18,000。<Synthesis Example 3> [Polyimide precursor derived from 4,4'-oxydiphthalic anhydride, 4,4'-diaminodiphenyl ether, and 2-hydroxyethyl methacrylate ( A-3: Synthesis of polyimide precursors with radical polymerizable groups] 20.0 g (64.5 millimoles) of 4,4'-oxydiphthalic anhydride (dried at 140°C) For 12 hours), 16.8g (129 millimoles) of 2-hydroxyethyl methacrylate, 0.05g of hydroquinone, 20.4g of pyridine (258 millimoles) of pyridine and 100g of diethylene glycol Dimethyl ether was mixed and stirred at a temperature of 60°C for 18 hours to produce a diester of 4,4'-oxydiphthalic anhydride and 2-hydroxyethyl methacrylate. Then, after chlorinating the obtained diester with SOCl 2, it was converted into a polyimide precursor with 4,4'-diaminodiphenyl ether in the same way as in Synthesis Example 1, and compared with Synthesis Example 1. 1 The same method was used to obtain the polyimide precursor. The weight average molecular weight of the polyimide precursor was 18,000.

A-3 [化學式33]

Figure 02_image065
A-3 [Chemical formula 33]
Figure 02_image065

<合成例4> [源自4,4’-氧二鄰苯二甲酸酐、4,4’-二胺基-2,2’-二甲基聯苯(鄰聯甲苯)及甲基丙烯酸-2-羥基乙酯的聚醯亞胺前驅物(A-4:具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)的4,4’-氧二鄰苯二甲酸酐(於140℃下攪拌了12小時)、16.8g(129毫莫耳)的甲基丙烯酸-2-羥基乙酯、0.05g的對苯二酚、20.4g的吡啶(258毫莫耳)及100g的二甘醇二甲醚進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸酐與甲基丙烯酸-2-羥基乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基-2,2’-二甲基聯苯轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了聚醯亞胺前驅物。該聚醯亞胺前驅物的重量平均分子量為19,000。<Synthesis example 4> [From 4,4'-oxydiphthalic anhydride, 4,4'-diamino-2,2'-dimethylbiphenyl (o-xylene) and methacrylic acid- Synthesis of polyimide precursor of 2-hydroxyethyl ester (A-4: polyimide precursor with radical polymerizable group)] 20.0 g (64.5 millimoles) of 4,4'- Oxydiphthalic anhydride (stirred at 140°C for 12 hours), 16.8g (129 millimoles) of 2-hydroxyethyl methacrylate, 0.05g of hydroquinone, 20.4g of pyridine ( 258 millimoles) and 100 g of diglyme were mixed, and stirred at a temperature of 60°C for 18 hours to produce 4,4'-oxydiphthalic anhydride and methacrylic acid-2-hydroxyethyl The diester of an ester. Next, after chlorinating the obtained diester with SOCl 2, it was converted into polyimide using 4,4'-diamino-2,2'-dimethylbiphenyl in the same method as in Synthesis Example 1. The precursor, and the polyimide precursor was obtained by the same method as in Synthesis Example 1. The weight average molecular weight of the polyimide precursor was 19,000.

A-4 [化學式34]

Figure 02_image067
A-4 [Chemical formula 34]
Figure 02_image067

<合成例5> [源自2,2’-雙(3-胺基-4-羥基苯基)六氟丙烷、4,4’-氧代二苯甲醯氯的聚苯并㗁唑前驅物(A-5)的合成] 向N-甲基-2-吡咯啶酮100mL添加2,2’-雙(3-胺基-4-羥基苯基)六氟丙烷13.92g並進行了攪拌溶解。接著,將溫度保持0~5℃的同時經10分鐘滴加11.21g的4,4’-氧代二苯甲醯氯之後,持續攪拌了60分鐘。接著,使聚苯并㗁唑前驅物於6升水中沉澱,以5000rpm的速度將水-聚苯并㗁唑前驅物混合物攪拌了15分鐘。藉由過濾去除聚苯并㗁唑前驅物,於6升水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下,於45℃下將所得到之聚苯并㗁唑前驅物乾燥了3天。該聚苯并㗁唑前驅物的重量平均分子量為15,000。<Synthesis example 5> [Polybenzoxazole precursor derived from 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, 4,4'-oxodityl chloride (A-5) Synthesis] 13.92 g of 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane was added to 100 mL of N-methyl-2-pyrrolidone, and the mixture was stirred and dissolved. Next, 11.21 g of 4,4'-oxodityl chloride was added dropwise over 10 minutes while maintaining the temperature at 0 to 5°C, and then stirring was continued for 60 minutes. Next, the polybenzoxazole precursor was precipitated in 6 liters of water, and the water-polybenzoxazole precursor mixture was stirred for 15 minutes at a speed of 5000 rpm. The polybenzoxazole precursor was removed by filtration, stirred again in 6 liters of water for 30 minutes and filtered again. Next, the obtained polybenzoxazole precursor was dried at 45°C under reduced pressure for 3 days. The weight average molecular weight of this polybenzoxazole precursor was 15,000.

A-5 [化學式35]

Figure 02_image069
A-5 [Chemical formula 35]
Figure 02_image069

實施例及比較例 <感光性樹脂組成物的製備> 將下述表2中所記載之成分進行混合而得到了各感光性樹脂組成物。使所得到之感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器進行了加壓過濾。關於表中所記載之化合物的名稱或結構等的詳細內容,作為標註示於表下方。 針對已製備之各感光性樹脂組成物,進行了下述評價試驗。將結果示於表3中。Examples and comparative examples <Preparation of photosensitive resin composition> The components described in Table 2 below were mixed to obtain each photosensitive resin composition. The obtained photosensitive resin composition was filtered under pressure through a filter having a pore width of 0.8 μm. The detailed content of the name or structure of the compound described in the table is shown below the table as a label. The following evaluation tests were conducted for each photosensitive resin composition prepared. The results are shown in Table 3.

<保存穩定性> 使用E型黏度測量了上述過濾後的感光性樹脂組成物的黏度(0天)。於密閉容器中,將感光性樹脂組成物以25℃靜置了14天之後,再次使用E型黏度測量了黏度(14天)。從以下的式計算出黏度變動率。黏度變動率愈低,則表示保存穩定性愈高。 黏度變動率=|100×{1-(黏度(14天)/黏度(0天))}| 黏度的測量於25℃下進行,除此以外,依照JIS Z 8803:2011進行。 A:黏度變動率為5%以下 B:黏度變動率大於5%且10%以下 C:黏度變動率大於10%且15%以下 D:黏度變動率大於15%且20%以下 E:黏度變動率大於20%<Storage stability> The viscosity (0 day) of the photosensitive resin composition after the filtration was measured using E-type viscosity. After allowing the photosensitive resin composition to stand at 25°C for 14 days in an airtight container, the viscosity was measured again using E-type viscosity (14 days). Calculate the viscosity change rate from the following formula. The lower the viscosity change rate, the higher the storage stability. Viscosity rate of change=|100×{1-(Viscosity (14 days)/Viscosity (0 days))}| The measurement of the viscosity was carried out at 25°C, except that it was carried out according to JIS Z 8803:2011. A: The viscosity change rate is less than 5% B: Viscosity change rate is greater than 5% and less than 10% C: Viscosity change rate is greater than 10% and less than 15% D: Viscosity change rate is greater than 15% and less than 20% E: Viscosity change rate is greater than 20%

<斷裂伸長率> 於矽晶圓上藉由旋塗法將上述過濾後的各感光性樹脂組成物應用成層狀而形成了感光性樹脂組成物層。於加熱板上,以100℃將形成有感光性樹脂組成物層之矽晶圓乾燥5分鐘,從而於矽晶圓上形成了20μm厚度的均勻的感光性樹脂組成物層。使用步進機(Nikon NSR 2005 i9C),以500mJ/cm2 的曝光能量對矽晶圓上的感光性樹脂組成物層進行曝光,於氮環境下,以10℃/分鐘的升溫速度對經曝光之感光性樹脂組成物層(樹脂層)進行升溫,達到180℃之後,將該溫度維持3小時。將硬化後的樹脂層浸漬於4.9%氫氟酸溶液,從矽晶圓剝離樹脂層而得到了樹脂膜1。<Elongation at break> Each photosensitive resin composition after the filtration was applied in a layer form on a silicon wafer by a spin coating method to form a photosensitive resin composition layer. The silicon wafer on which the photosensitive resin composition layer was formed was dried on the hot plate at 100°C for 5 minutes to form a uniform photosensitive resin composition layer with a thickness of 20 μm on the silicon wafer. Using a stepper (Nikon NSR 2005 i9C), the photosensitive resin composition layer on the silicon wafer was exposed at an exposure energy of 500mJ/cm 2 and exposed to a temperature of 10°C/min in a nitrogen environment. The temperature of the photosensitive resin composition layer (resin layer) was increased to 180°C, and then the temperature was maintained for 3 hours. The cured resin layer was immersed in a 4.9% hydrofluoric acid solution, and the resin layer was peeled from the silicon wafer to obtain a resin film 1.

使用拉伸試驗機(TENSILON)測量了樹脂膜1的斷裂伸長率。具體而言,以十字頭速度300mm/分鐘、寬度10mm、試樣長度50mm針對薄膜的長邊方向、寬度方向,於25℃、65%相對濕度(RH)的環境下依照JIS-K6251:2017測量了斷裂伸長率。斷裂伸長率藉由Eb (%)=(Lb -L0 )/L0 (Eb :切割時的伸長率、L0 :試驗前的試驗片的長度、Lb :試驗片已被切斷時的試驗片的長度)計算。評價中,將長邊方向、寬度方向各自的斷裂伸長率各測量5次,並使用了長邊方向和寬度方向的平均值。 A:斷裂伸長率大於85% B:斷裂伸長率大於80%且85%以下 C:斷裂伸長率大於75%且80%以下 D:斷裂伸長率大於70%且75%以下 E:斷裂伸長率為70%以下The elongation at break of the resin film 1 was measured using a tensile testing machine (TENSILON). Specifically, it is measured in accordance with JIS-K6251:2017 at 25°C and 65% relative humidity (RH) with a crosshead speed of 300mm/min, a width of 10mm, and a sample length of 50mm in the longitudinal direction and width direction of the film. The elongation at break. The elongation at break is defined by E b (%) = (L b -L 0 )/L 0 (E b : the elongation during cutting, L 0 : the length of the test piece before the test, and L b : the test piece has been cut The length of the test piece when broken) is calculated. In the evaluation, the elongation at break in each of the longitudinal direction and the width direction was measured 5 times, and the average value of the longitudinal direction and the width direction was used. A: Elongation at break greater than 85% B: Elongation at break greater than 80% and less than 85% C: Elongation at break greater than 75% and less than 80% D: Elongation at break greater than 70% and less than 75% E: Elongation at break 70% or less

[表2]   聚合物前驅體 熱鹼產生劑 光聚合起始劑 聚合性化合物 聚合抑制劑 遷移抑制劑 金屬黏著性改良劑 溶劑 種類 質量份 種類 質量份 種類 質量份 種類 質量份 種類 質量份 種類 質量份 種類 質量份 種類 質量份 種類 質量份 組成物1 A-1 33.6 B-1 0.3 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 組成物2 A-1 33.6 B-1 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 組成物3 A-2 33.6 B-2 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-2 0.126 G-1 0.63 I-1 45 I-2 15 組成物4 A-3 33.6 B-3 0.75 C-1 1.26 D-1 5.88 E-2 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物5 A-4 33.6 B-4 0.75 C-1 1.26 D-2 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 組成物6 A-5 33.6 B-5 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-3 0.126 G-1 0.63 I-1 45 I-2 15 組成物7 A-3 33.6 B-6 0.75 C-2 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-3 0.63 I-1 45 I-2 15 組成物8 A-3 33.6 B-7 0.3 C-1 1.26 D-1 5.88 E-2 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物9 A-3 33.6 B-7 0.75 C-1 1.26 D-1 5.88 E-2 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物10 A-3 33.6 B-8 0.3 C-1 1.26 D-2 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物11 A-3 33.6 B-8 0.75 C-1 1.26 D-2 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物12 A-3 33.6 B-9 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-4 0.126 G-1 0.63 I-1 45 I-3 15 組成物13 A-3 33.6 B-10 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物14 A-3 33.6 B-11 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-3 0.63 I-1 45 I-2 15 組成物15 A-3 33.6 B-12 0.75 C-1 1.26 D-2 5.88 E-3 0.084 F-1 0.126 G-1 0.63 I-1 45 I-3 15 組成物16 A-3 33.6 B-13 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物17 A-3 33.6 B-14 0.75 C-1 1.26 D-3 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物18 A-3 33.6 B-15 0.3 C-1 1.26 D-1 5.88 E-3 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 組成物19 A-3 33.6 B-16 0.75 C-3 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-3 15 組成物20 A-3 33.6 B-17 0.75 C-1 1.26 D-3 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 組成物21 A-3 33.6 B-18 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物22 A-3 33.6 B-19 0.3 C-3 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物23 A-3 33.6 B-20 0.3 C-3 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物24 A-3 33.6 B-4/B-5 0.3/0.45 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物25 A-3 33.6 B-2 0.75 C-1/C-3 0.86/0.40 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物c1 A-3 33.6 BX-1 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物c2 A-3 33.6 BX-2 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 組成物c3 A-3 33.6 BX-3 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 [表3] No. 組成物 保存穩定性 斷裂伸長率 實施例1 組成物1 A A 實施例2 組成物2 C A 實施例3 組成物3 A A 實施例4 組成物4 A B 實施例5 組成物5 A B 實施例6 組成物6 A A 實施例7 組成物7 A B 實施例8 組成物8 A B 實施例9 組成物9 C A 實施例10 組成物10 A B 實施例11 組成物11 C A 實施例12 組成物12 A A 實施例13 組成物13 A A 實施例14 組成物14 A A 實施例15 組成物15 A A 實施例16 組成物16 A A 實施例17 組成物17 A A 實施例18 組成物18 A B 實施例19 組成物19 A A 實施例20 組成物20 A A 實施例21 組成物21 A A 實施例22 組成物22 A B 實施例23 組成物23 A A 實施例24 組成物24 A B 實施例25 組成物25 A A 比較例1 組成物c1 E C 比較例2 組成物c2 D D 比較例3 組成物c3 B E [Table 2] Polymer precursor Thermal alkali generator Photopolymerization initiator Polymeric compound Polymerization inhibitor Migration inhibitor Metal adhesion improver Solvent species Mass parts species Mass parts species Mass parts species Mass parts species Mass parts species Mass parts species Mass parts species Mass parts species Mass parts Composition 1 A-1 33.6 B-1 0.3 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 Composition 2 A-1 33.6 B-1 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 Composition 3 A-2 33.6 B-2 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-2 0.126 G-1 0.63 I-1 45 I-2 15 Composition 4 A-3 33.6 B-3 0.75 C-1 1.26 D-1 5.88 E-2 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 5 A-4 33.6 B-4 0.75 C-1 1.26 D-2 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 Composition 6 A-5 33.6 B-5 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-3 0.126 G-1 0.63 I-1 45 I-2 15 Composition 7 A-3 33.6 B-6 0.75 C-2 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-3 0.63 I-1 45 I-2 15 Composition 8 A-3 33.6 B-7 0.3 C-1 1.26 D-1 5.88 E-2 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 9 A-3 33.6 B-7 0.75 C-1 1.26 D-1 5.88 E-2 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 10 A-3 33.6 B-8 0.3 C-1 1.26 D-2 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 11 A-3 33.6 B-8 0.75 C-1 1.26 D-2 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 12 A-3 33.6 B-9 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-4 0.126 G-1 0.63 I-1 45 I-3 15 Composition 13 A-3 33.6 B-10 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 14 A-3 33.6 B-11 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-3 0.63 I-1 45 I-2 15 Composition 15 A-3 33.6 B-12 0.75 C-1 1.26 D-2 5.88 E-3 0.084 F-1 0.126 G-1 0.63 I-1 45 I-3 15 Composition 16 A-3 33.6 B-13 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 17 A-3 33.6 B-14 0.75 C-1 1.26 D-3 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 18 A-3 33.6 B-15 0.3 C-1 1.26 D-1 5.88 E-3 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 Composition 19 A-3 33.6 B-16 0.75 C-3 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-3 15 Composition 20 A-3 33.6 B-17 0.75 C-1 1.26 D-3 5.88 E-1 0.084 F-1 0.126 G-2 0.63 I-1 45 I-2 15 Composition 21 A-3 33.6 B-18 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 22 A-3 33.6 B-19 0.3 C-3 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 23 A-3 33.6 B-20 0.3 C-3 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 24 A-3 33.6 B-4/B-5 0.3/0.45 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition 25 A-3 33.6 B-2 0.75 C-1/C-3 0.86/0.40 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition c1 A-3 33.6 BX-1 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition c2 A-3 33.6 BX-2 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 Composition c3 A-3 33.6 BX-3 0.75 C-1 1.26 D-1 5.88 E-1 0.084 F-1 0.126 G-1 0.63 I-1 45 I-2 15 [table 3] No. Composition Storage stability Elongation at break Example 1 Composition 1 A A Example 2 Composition 2 C A Example 3 Composition 3 A A Example 4 Composition 4 A B Example 5 Composition 5 A B Example 6 Composition 6 A A Example 7 Composition 7 A B Example 8 Composition 8 A B Example 9 Composition 9 C A Example 10 Composition 10 A B Example 11 Composition 11 C A Example 12 Composition 12 A A Example 13 Composition 13 A A Example 14 Composition 14 A A Example 15 Composition 15 A A Example 16 Composition 16 A A Example 17 Composition 17 A A Example 18 Composition 18 A B Example 19 Composition 19 A A Example 20 Composition 20 A A Example 21 Composition 21 A A Example 22 Composition 22 A B Example 23 Composition 23 A A Example 24 Composition 24 A B Example 25 Composition 25 A A Comparative example 1 Composition c1 E C Comparative example 2 Composition c2 D D Comparative example 3 Composition c3 B E

(A)聚醯亞胺前驅物:在上述表示合成例之各化合物(A) Polyimide precursor: each compound in the synthesis example shown above

(B)熱鹼產生劑等 [化學式36]

Figure 02_image071
[化學式37]
Figure 02_image073
(B) Thermal alkali generator, etc. [Chemical formula 36]
Figure 02_image071
[Chemical formula 37]
Figure 02_image073

關於熱鹼產生劑,將上述實施例中的例示編號與以上通常說明中例示之化合物的編號的關係示於以下的表4中。 [表4] 實施例No. 通常記載No. 實施例No. 通常記載No. 實施例No. 通常記載No. B-1 Bc-1 B-8 Bc-4 B-15 Bc-6 B-2 Ba-1 B-9 Ba-5 B-16 Ba-2 B-3 Bb-1 B-10 Ba-7 B-17 Ba-4 B-4 Bb-2 B-11 Ba-9 B-18 Ba-6 B-5 Ba-3 B-12 Ba-11 B-19 Bc-3 B-6 Bb-3 B-13 Ba-8 B-20 Ba-14 B-7 Bc-2 B-14 Ba-10 - - Regarding the thermal base generator, the relationship between the exemplified number in the above-mentioned examples and the number of the compound exemplified in the above general description is shown in Table 4 below. [Table 4] Example No. Usually record No. Example No. Usually record No. Example No. Usually record No. B-1 Bc-1 B-8 Bc-4 B-15 Bc-6 B-2 Ba-1 B-9 Ba-5 B-16 Ba-2 B-3 Bb-1 B-10 Ba-7 B-17 Ba-4 B-4 Bb-2 B-11 Ba-9 B-18 Ba-6 B-5 Ba-3 B-12 Ba-11 B-19 Bc-3 B-6 Bb-3 B-13 Ba-8 B-20 Ba-14 B-7 Bc-2 B-14 Ba-10 - -

比較例的化合物 [化學式38]

Figure 02_image075
Compound of Comparative Example [Chemical Formula 38]
Figure 02_image075

(C)光聚合起始劑 C-1:IRGACURE OXE 01(BASF公司製) C-2:IRGACURE OXE 02(BASF公司製) C-3:IRGACURE 369(BASF公司製)(C) Photopolymerization initiator C-1: IRGACURE OXE 01 (made by BASF) C-2: IRGACURE OXE 02 (made by BASF) C-3: IRGACURE 369 (made by BASF)

(D)聚合性化合物 D-1:A-DPH(Shin-Nakamura Chemical Co.,Ltd.製) D-2:SR-209(Sartomer Company,Inc.製) [化學式39]

Figure 02_image077
D-3:A-TMMT(Shin-Nakamura Chemical Co.,Ltd.製)(D) Polymerizable compound D-1: A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.) D-2: SR-209 (manufactured by Sartomer Company, Inc.) [Chemical formula 39]
Figure 02_image077
D-3: A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)

(E)聚合抑制劑 E-1:2,6-二-第三丁基-4-甲基苯酚(Tokyo Chemical Industry Co., Ltd.製) E-2:對苯醌(Tokyo Chemical Industry Co., Ltd.製) E-3:對甲氧基苯酚(Tokyo Chemical Industry Co., Ltd.製)(E) Polymerization inhibitor E-1: 2,6-Di-tert-butyl-4-methylphenol (manufactured by Tokyo Chemical Industry Co., Ltd.) E-2: p-benzoquinone (manufactured by Tokyo Chemical Industry Co., Ltd.) E-3: p-Methoxyphenol (manufactured by Tokyo Chemical Industry Co., Ltd.)

(F)遷移抑制劑 F-1:以上所例示之化合物 M-1 F-2:以上所例示之化合物 M-2 F-3:以上所例示之化合物 M-3 F-4:以上所例示之化合物 M-4(F) Migration inhibitor F-1: The compound exemplified above M-1 F-2: The compound exemplified above M-2 F-3: The compound exemplified above M-3 F-4: The compound exemplified above M-4

(G)金屬黏著性改良劑 G-1:以上所例示之化合物 SC-1 G-2:以上所例示之化合物 SC-2 G-3:以上所例示之化合物 SC-3(G) Metal adhesion improver G-1: The compound exemplified above SC-1 G-2: The compound exemplified above SC-2 G-3: The compound exemplified above SC-3

(I)溶劑 I-1:γ-丁內酯(SANWAYUKA INDUSTRY CORPORATION製) I-2:二甲基亞碸(Wako Pure Chemical Industries, Ltd.製) I-3:N-甲基-2-吡咯啶酮(Ashland公司製)(I) Solvent I-1: γ-Butyrolactone (manufactured by SANWAYUKA INDUSTRY CORPORATION) I-2: Dimethyl sulfide (manufactured by Wako Pure Chemical Industries, Ltd.) I-3: N-methyl-2-pyrrolidone (manufactured by Ashland)

從上述結果可知,使用了在成為所產生之鹼之部分具有聚合性基之熱鹼產生劑之實施例的感光性樹脂組成物中,任一硬化膜均表示良好的斷裂伸長率(80%以上)(實施例1~25)。硬化膜顯示高的斷裂伸長率係指充分地進行了感光性樹脂組成物的熱硬化,認為B-1~B-20的熱鹼產生劑在膜硬化溫度亦即180℃下有效地產生鹼,並且抑制了所產生之鹼的揮發。另外,理解為,依據需要亦能夠將感光性樹脂組成物製備成保存穩定性優異者(實施例1、3~7、9、11~24),其中加熱前的鹼性抑制地較低來抑制聚合物前驅物的長時間的硬化。 另一方面,使用了不具有聚合性基的熱鹼產生劑之比較例的感光性樹脂組成物中,認為均沒有充分進行熱固性樹脂的硬化反應,作為結果,硬化膜的斷裂伸長率大而較差。又,關於保存穩定性,比較例1及2非常低。From the above results, it can be seen that in the photosensitive resin composition of the example using the thermal alkali generator having a polymerizable group in the part of the generated alkali, any cured film showed good breaking elongation (80% or more) ) (Examples 1-25). The high elongation at break of the cured film means that the photosensitive resin composition is sufficiently thermally cured, and it is considered that the thermal alkali generators B-1 to B-20 effectively generate alkali at 180°C, which is the film curing temperature. And suppress the volatilization of the alkali produced. In addition, it is understood that the photosensitive resin composition can be prepared as required to have excellent storage stability (Examples 1, 3 to 7, 9, 11 to 24), in which the alkalinity before heating is suppressed to a low level. Long-term hardening of polymer precursors. On the other hand, in the photosensitive resin composition of the comparative example using a thermal base generator without a polymerizable group, it is considered that the curing reaction of the thermosetting resin does not proceed sufficiently, and as a result, the elongation at break of the cured film is large and poor. . In addition, in terms of storage stability, Comparative Examples 1 and 2 were very low.

<實施例100> 使實施例1的感光性樹脂組成物1通過細孔的寬度為1.0μm的過濾器而加壓過濾之後,於形成有銅薄層之樹脂基板的表面旋壓成型(3500rpm、30秒鐘)而應用。於100℃下將應用在樹脂基板中之感光性樹脂組成物乾燥2分鐘之後,應用步進機(Nikon Corporation製、NSR1505i6)進行了曝光。曝光經由遮罩,於波長365nm下以200mJ/cm2 的曝光量進行了曝光。曝光之後,進行烘烤,用環戊酮顯影30秒鐘,用丙二醇單甲醚乙酸酯(PGMEA)沖洗20秒鐘,從而得到了圖案。 接著,於230℃下加熱3小時而形成了再配線層用層間絕緣膜。該再配線層用層間絕緣膜的絕緣性優異。<Example 100> The photosensitive resin composition 1 of Example 1 was pressure-filtered through a filter with a pore width of 1.0 μm, and then spin-molded (3500 rpm, 30 seconds) and apply. After drying the photosensitive resin composition applied to the resin substrate at 100°C for 2 minutes, it was exposed using a stepper (manufactured by Nikon Corporation, NSR1505i6). The exposure was performed through a mask at a wavelength of 365 nm with an exposure amount of 200 mJ/cm 2 . After exposure, baking was performed, developed with cyclopentanone for 30 seconds, and washed with propylene glycol monomethyl ether acetate (PGMEA) for 20 seconds, thereby obtaining a pattern. Then, it heated at 230 degreeC for 3 hours, and the interlayer insulating film for rewiring layers was formed. The interlayer insulating film for the rewiring layer has excellent insulating properties.

又,上述專利文獻3(日本特開2006-282880號公報)中所記載之化合物X-4及X-5藉由光照射產生鹼,但是在200℃以下未確認到鹼的產生。In addition, the compounds X-4 and X-5 described in Patent Document 3 (Japanese Patent Application Laid-Open No. 2006-282880) generate bases by light irradiation, but the generation of bases is not confirmed at 200°C or lower.

no

no

無。no.

Claims (13)

一種感光性樹脂組成物,其包含熱鹼產生劑、選自聚醯亞胺前驅物及聚苯并㗁唑前驅物之聚合物前驅物、光聚合起始劑及聚合性化合物,其中 該熱鹼產生劑在200℃以下產生鹼,並且在成為所產生之鹽之部位具有聚合性基。A photosensitive resin composition comprising a thermal base generator, a polymer precursor selected from polyimide precursors and polybenzoxazole precursors, a photopolymerization initiator and a polymerizable compound, wherein The thermal base generator generates a base at 200°C or lower, and has a polymerizable group at a site that becomes the generated salt. 如申請專利範圍第1項所述之感光性樹脂組成物,其中 該熱鹼產生劑具有由下述式(N1)~式(N3)中的任一個表示之結構,
Figure 03_image001
式(N1)中,X為單鍵或2價的連結基,R1 分別獨立地表示氫原子或有機基團,n1及n2為1或2,n1+n2為3,n3為0或1,n3為1時,X不是單鍵,n1為2時,2個[ ]內的基團可以彼此相同亦可以不同,n2為2時,2個R1 可以彼此相同亦可以不同,2個R1 可以彼此連結而形成環狀結構,R1 中的至少一個具有聚合性基,
Figure 03_image003
式(N2)中,R2 表示氫原子或有機基團,R3 表示有機基團,n4及n5為1或2,n4+n5為3,n4為2時,( )內的基團可以彼此相同亦可以不同,n5為2時,2個R2 可以彼此相同亦可以不同,2個R2 可以彼此連結而形成環狀結構,R2 中的至少一個具有聚合性基,
Figure 03_image005
式(N3)中,R4 表示n8價的有機基團,R5 及R6 分別獨立地表示氫原子或烴基,R7 ~R9 分別獨立地表示烴基,A表示m價的酸陰離子,m為1~4的整數,n7表示1~12的整數,n8及n9表示1~12的整數,且n8=n9,R5 與R6 可以連結而形成環狀結構,R7 ~R9 中的2個以上可以分別連結而形成環狀結構,R7 ~R9 中的至少一個具有聚合性基。
The photosensitive resin composition described in item 1 of the scope of patent application, wherein the thermal alkali generator has a structure represented by any one of the following formulas (N1) to (N3),
Figure 03_image001
In formula (N1), X is a single bond or a divalent linking group, R 1 each independently represents a hydrogen atom or an organic group, n1 and n2 are 1 or 2, n1+n2 is 3, n3 is 0 or 1, When n3 is 1, X is not a single bond, when n1 is 2, the groups in the two [] may be the same or different from each other, when n2 is 2, the two R 1 may be the same or different from each other, and 2 R 1 May be linked to each other to form a cyclic structure, at least one of R 1 has a polymerizable group,
Figure 03_image003
In formula (N2), R 2 represents a hydrogen atom or an organic group, R 3 represents an organic group, n4 and n5 are 1 or 2, n4+n5 is 3, and n4 is 2, the groups in () can be mutually The same or different. When n5 is 2, the two R 2 may be the same or different from each other, the two R 2 may be connected to each other to form a cyclic structure, and at least one of R 2 has a polymerizable group,
Figure 03_image005
In formula (N3), R 4 represents an n8-valent organic group, R 5 and R 6 each independently represent a hydrogen atom or a hydrocarbon group, R 7 to R 9 each independently represent a hydrocarbon group, A represents an m-valent acid anion, m It is an integer from 1 to 4, n7 represents an integer from 1 to 12, n8 and n9 represent an integer from 1 to 12, and n8=n9, R 5 and R 6 may be connected to form a cyclic structure, R 7 to R 9 Two or more may be connected separately to form a cyclic structure, and at least one of R 7 to R 9 has a polymerizable group.
如申請專利範圍第1項或第2項所述之感光性樹脂組成物,其中 該成為所產生之鹼之部位所具有之聚合性基為環氧基、氧環丁烷基、乙烯性不飽和基或由下述式(Z)表示之基團,
Figure 03_image007
式(Z)中,Rc表示氧原子、氮原子或(n+2)價的芳香族基,Ra及Rb分別獨立地表示氫原子或有機基團,n表示0~6的整數,Rc為氧原子的情況下,n為0,Rc為氮原子的情況下,n為1,*表示鍵結鍵。
The photosensitive resin composition as described in item 1 or item 2 of the scope of patent application, wherein the polymerizable group in the site that becomes the base produced is epoxy group, oxetane group, and ethylenically unsaturated Group or a group represented by the following formula (Z),
Figure 03_image007
In formula (Z), Rc represents an oxygen atom, nitrogen atom or (n+2) valence aromatic group, Ra and Rb each independently represent a hydrogen atom or an organic group, n represents an integer from 0 to 6, and Rc represents oxygen In the case of an atom, n is 0, and when Rc is a nitrogen atom, n is 1, and * represents a bonding bond.
如申請專利範圍第1項或第2項所述之感光性樹脂組成物,其中 該聚合物前驅物包含聚醯亞胺前驅物。The photosensitive resin composition described in item 1 or item 2 of the scope of patent application, wherein The polymer precursor includes a polyimide precursor. 如申請專利範圍第4項所述之感光性樹脂組成物,其中 該聚醯亞胺前驅物具有由下述式(1)表示之構成單元,
Figure 03_image009
式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價的有機基團,R115 表示4價的有機基團,R113 及R114 分別獨立地表示氫原子或1價的有機基團。
The photosensitive resin composition described in item 4 of the scope of patent application, wherein the polyimide precursor has a structural unit represented by the following formula (1),
Figure 03_image009
In formula (1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent hydrogen Atom or monovalent organic group.
如申請專利範圍第5項所述之感光性樹脂組成物,其中 該式(1)中的R113 及R114 中的至少一個包含自由基聚合性基。The photosensitive resin composition according to claim 5, wherein at least one of R 113 and R 114 in the formula (1) contains a radical polymerizable group. 如申請專利範圍第1項或第2項所述之感光性樹脂組成物,其用於再配線層用層間絕緣膜的形成。The photosensitive resin composition described in item 1 or item 2 of the scope of patent application is used for the formation of an interlayer insulating film for a rewiring layer. 一種硬化膜,其使申請專利範圍第1項至第7項中任一項所述之感光性樹脂組成物硬化而成。A cured film obtained by curing the photosensitive resin composition described in any one of items 1 to 7 in the scope of the patent application. 一種積層體,其具有2層以上且7層以下的申請專利範圍第8項所述之硬化膜,且在該硬化膜之間具有金屬層。A laminate having two or more layers and seven or less layers of the cured film described in item 8 of the scope of patent application, and having a metal layer between the cured films. 一種硬化膜之製造方法,其包括將申請專利範圍第1項至第7項中任一項所述之感光性樹脂組成物應用於基板而形成膜之膜形成步驟。A method for manufacturing a cured film, which includes a film forming step of applying the photosensitive resin composition described in any one of items 1 to 7 of the scope of patent application to a substrate to form a film. 如申請專利範圍第10項所述之硬化膜之製造方法,其包括在80℃~450℃下對該膜進行加熱之加熱步驟。The method for manufacturing a cured film as described in the tenth item of the scope of patent application includes a heating step of heating the film at 80°C to 450°C. 如申請專利範圍第10項或第11項所述之硬化膜之製造方法,其具有對該膜進行曝光之曝光步驟及對該膜進行顯影之顯影步驟。The method for manufacturing a cured film as described in item 10 or item 11 of the scope of the patent application has an exposure step of exposing the film and a developing step of developing the film. 一種半導體器件,其具有申請專利範圍第8項所述之硬化膜或申請專利範圍第9項所述之積層體。A semiconductor device having the cured film described in the 8th patent application or the laminated body described in the 9th patent application.
TW108129001A 2018-09-27 2019-08-14 Photosensitive resin composition, cured film, laminate, production method of cured film, semiconductor device TWI805825B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018181760 2018-09-27
JP2018-181760 2018-09-27

Publications (2)

Publication Number Publication Date
TW202024787A true TW202024787A (en) 2020-07-01
TWI805825B TWI805825B (en) 2023-06-21

Family

ID=69949354

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108129001A TWI805825B (en) 2018-09-27 2019-08-14 Photosensitive resin composition, cured film, laminate, production method of cured film, semiconductor device

Country Status (4)

Country Link
JP (1) JP7133027B2 (en)
KR (1) KR102500455B1 (en)
TW (1) TWI805825B (en)
WO (1) WO2020066315A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102555592B1 (en) * 2019-02-22 2023-07-14 후지필름 가부시키가이샤 Curable resin composition, cured film, laminate, method for producing cured film, semiconductor device, and thermal base generator
JPWO2022059622A1 (en) * 2020-09-16 2022-03-24
WO2023026892A1 (en) * 2021-08-27 2023-03-02 富士フイルム株式会社 Resin composition, cured article, layered body, cured article production method, layered body production method, semiconductor device production method, semiconductor device, and base generating agent
TW202344613A (en) * 2022-02-25 2023-11-16 日商富士軟片股份有限公司 Resin composition, cured object, laminate, method for producing cured object, method for producing laminate, method for producing semiconductor device, semiconductor device, and compound

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5011649B2 (en) 2005-03-31 2012-08-29 大日本印刷株式会社 Photosensitive resin composition and article
JP2007056196A (en) * 2005-08-26 2007-03-08 Tokyo Institute Of Technology Polyimide precursor composition, method for producing polyimide film and semiconductor device
JP6241035B2 (en) * 2011-12-26 2017-12-06 東レ株式会社 Photosensitive resin composition and method for producing semiconductor element
JP6136486B2 (en) 2013-04-08 2017-05-31 日立化成デュポンマイクロシステムズ株式会社 Resin composition and pattern forming method using the same
KR102266013B1 (en) * 2013-06-28 2021-06-18 후지필름 와코 준야꾸 가부시키가이샤 Base generator, base-reactive composition containing said base generator, and base generation method
JP6164070B2 (en) 2013-12-04 2017-07-19 日立化成デュポンマイクロシステムズ株式会社 POLYIMIDE PRECURSOR, RESIN COMPOSITION CONTAINING THE POLYIMIDE PRECURSOR, METHOD FOR PRODUCING PATTERN CURED FILM USING SAME, AND SEMICONDUCTOR DEVICE
TWI644979B (en) * 2014-06-27 2018-12-21 日商富士軟片股份有限公司 Thermosetting resin composition, cured film, method for producing cured film, and semiconductor element
JP6612343B2 (en) * 2015-06-30 2019-11-27 富士フイルム株式会社 Precursor composition, photosensitive resin composition, method for producing precursor composition, cured film, method for producing cured film, and semiconductor device
TWI637980B (en) * 2017-01-11 2018-10-11 長興材料工業股份有限公司 Precursor for polyimide and use thereof

Also Published As

Publication number Publication date
KR102500455B1 (en) 2023-02-16
JPWO2020066315A1 (en) 2021-09-16
JP7133027B2 (en) 2022-09-07
WO2020066315A1 (en) 2020-04-02
TWI805825B (en) 2023-06-21
KR20210022092A (en) 2021-03-02

Similar Documents

Publication Publication Date Title
JP6813602B2 (en) Photosensitive resin compositions, heterocyclic-containing polymer precursors, cured films, laminates, methods for producing cured films, and semiconductor devices.
JP6782298B2 (en) Resin composition and its applications
TWI805825B (en) Photosensitive resin composition, cured film, laminate, production method of cured film, semiconductor device
TWI742285B (en) Photosensitive resin composition, cured film, laminate, cured film manufacturing method and semiconductor device
TWI819088B (en) Photosensitive resin composition, cured film, laminate, cured film manufacturing method, and semiconductor device
KR20190010614A (en) Negative-type photosensitive resin composition, cured film, method of producing cured film, semiconductor device, method of producing laminate, method of manufacturing semiconductor device, and polyimide precursor
JP7237978B2 (en) Resin composition, cured film, laminate, method for producing cured film, and semiconductor device
TWI785264B (en) Photosensitive resin composition, cured film, laminate, method for producing cured film, semiconductor element, and thermal alkali generator
WO2022145356A1 (en) Resin composition, cured product, laminate, cured product manufacturing method and semiconductor device
JPWO2019146778A1 (en) Photosensitive resin composition, cured film, laminate, method for manufacturing cured film, method for manufacturing laminate, semiconductor device
JP2023003421A (en) Cured film production method, resin composition, cured film, laminate body production method, and semiconductor device manufacturing method
JP7008732B2 (en) Photosensitive resin composition, resin, cured film, laminate, method for manufacturing cured film, semiconductor device
TW202024232A (en) Resin composition, cured film, laminate, cured film production method, and semiconductor device
TWI797291B (en) Photosensitive resin composition, method for producing photosensitive resin composition, cured film, laminate, method for producing cured film, method for producing laminate, and semiconductor device
TW202104511A (en) Curable resin composition, cured film, laminate, method for producing cured film, semiconductor device, and thermal base generator
JP7037664B2 (en) Photosensitive resin compositions, cured films, laminates, methods for manufacturing cured films, semiconductor devices, and thermal base generators.
JP7083392B2 (en) Photosensitive resin compositions, cured films, laminates, methods for producing these, semiconductor devices, thermal base generators used in these.
TW202128839A (en) Pattern forming method, photocurable resin composition, layered body manufacturing method, and electronic device manufacturing method
WO2019189110A1 (en) Photosensitive resin composition, cured film, laminate, method for manufacturing cured film, and semiconductor device
JP7078749B2 (en) Photosensitive resin composition, pattern forming method, cured film, laminate, and device
JP6875526B2 (en) Thermosetting resin compositions, cured films thereof, laminates, semiconductor devices, and methods for producing them.
TW202024786A (en) Photosensitive resin composition, cured film, layered product, production method for cured film, semiconductor device, and thermal base generator