JP7083392B2 - Photosensitive resin compositions, cured films, laminates, methods for producing these, semiconductor devices, thermal base generators used in these. - Google Patents

Description

The present invention relates to a photosensitive resin composition, a cured film, a laminate, a method for producing these, a semiconductor device, and a thermal base generator used for these.

Polyimide resin and polybenzoxazole resin have excellent heat resistance and insulating properties, and are therefore applied to various applications (see, for example, Non-Patent Documents 1 and 2). The application is not particularly limited, and examples of semiconductor devices for mounting include the use as a material for an insulating film or a sealing material, or a protective film thereof. It is also used as a base film and coverlay for flexible substrates.
The above-mentioned polyimide resin and the like generally have low solubility in a solvent. Therefore, a method of dissolving in a solvent in the state of a precursor before the cyclization reaction, specifically, a polymer precursor such as a polyimide precursor or a polybenzoxazole precursor is often used. As a result, excellent handleability can be realized, and when each product as described above is manufactured, it can be applied to a substrate or the like in various forms and processed. It can then be heated to cyclize the polymer precursor to form a cured product. In addition to the high performance such as heat resistance and insulation of polyimide resin, it is expected to be applied more and more in the industry from the viewpoint of excellent manufacturing adaptability.

There is a resin proposed in anticipation of using the above characteristics as a material for a coverlay (Patent Document 1). This photosensitive resin composition contains (A) a polyimide precursor, (B) a specific plasticizer, and (C) a photosensitive agent. It is stated that this makes it possible to provide a product that is flexible, does not warp, and exhibits flame retardancy.
A thermosetting resin composition containing a specific tertiary amine compound and a thermosetting resin that is cyclized and cured by a base has been proposed in order to use it as an insulating resin for a rewiring layer (Patent Documents). 2). As a result, the cyclization reaction can be carried out at a low temperature, and it is described that the stability is excellent. Further, in consideration of making an insulating film for the rewiring layer, a compound having a specific quaternary ammonium (cationic portion) and an anionic moiety having a radical initiation ability, a heterocyclic-containing polymer precursor, and radical polymerization A photosensitive resin composition containing a sex compound has been proposed (Patent Document 3). It is described that the cyclization reaction can be carried out at a low temperature and the resolution is excellent in exposure development.

Japanese Unexamined Patent Publication No. 2009-109590 International Publication No. 2015/199220 Japanese Unexamined Patent Publication No. 2016-27357

Science & Technology Co., Ltd. "High-performance and applied technology of polyimide" April 2008 Masaaki Kakimoto / Supervision, CMC Technical Library "Basics and Development of Polyimide Materials" Published in November 2011

With the above technique, it has become possible to realize a cyclization at a low temperature suitable for use in an interlayer insulating film, a rewiring layer, etc., and to provide a photosensitive resin composition having excellent stability and resolution. On the other hand, the speed of development of semiconductor devices is even faster, and there is a strong demand for improvements in overall performance due to improvements specialized in some performances. Therefore, in view of its use as an interlayer insulating film, a rewiring layer, etc., the present invention has the performances required for a photosensitive resin composition, such as storage stability, mechanical properties, developer solubility in unexposed areas, and lithographic properties. The purpose is to provide a comprehensively excellent photosensitive resin composition that satisfies a high level, and a cured film, a laminate, a method for producing a cured film, a method for producing a laminate, a semiconductor device, and a thermal base generator. And.

Based on the above problems, the present inventor repeated studies and experiments on the composition containing the polymer precursor from various viewpoints regarding the formulation, formulation, preparation conditions, etc. for comprehensively improving the performance. As a result, they have found that the above-mentioned problems can be solved by limiting the thermobase generator used in combination with the polymer precursor to a specific one, and have completed the present invention. Specifically, the above problems have been solved by the following means <1> and <2> to <23>.

式（Ｂ１）および（Ｂ２）中、Ｒ^１、Ｒ^２およびＲ^３はそれぞれ独立に第三級アミン構造を有しない有機基、ハロゲン原子または水素原子である、ただし、Ｒ^１およびＲ^２が同時に水素原子であることはない、また、Ｒ^１、Ｒ^２およびＲ^３がカルボキシル基を有することはない。
＜２＞上記熱塩基発生剤の塩基発生温度が１２０℃以上２００℃以下である、＜１＞に記載の感光性樹脂組成物。
＜３＞上記熱塩基発生剤のｐＫａが７よりも大きい、＜１＞または＜２＞に記載の感光性樹脂組成物。
＜４＞上記ポリマー前駆体がポリイミド前駆体を含む、＜１＞～＜３＞のいずれか１つに記載の感光性樹脂組成物。
＜５＞上記ポリイミド前駆体が下記式（１）で表される、＜４＞に記載の感光性樹脂組成物；

式（１）中、Ａ^１およびＡ^２は、それぞれ独立に酸素原子またはＮＨを表し、Ｒ^１１１は、２価の有機基を表し、Ｒ^１１５は、４価の有機基を表し、Ｒ^１１３およびＲ^１１４は、それぞれ独立に、水素原子または１価の有機基を表す。
＜６＞３６５ｎｍの波長における上記熱塩基発生剤のモル吸光係数が１００ｌ／（ｍｏｌ・ｃｍ）以下である、＜１＞～＜５＞のいずれか１つに記載の感光性樹脂組成物。
＜７＞上記熱塩基発生剤が、共役酸のｐＫａが１０以上である塩基を加熱によって発生する熱塩基発生剤を含む、＜１＞～＜６＞のいずれか１つに記載の感光性樹脂組成物。
＜８＞上記感光剤が光重合開始剤を含む、＜１＞～＜７＞のいずれか１つに記載の感光性樹脂組成物。
＜９＞有機溶剤を９０質量％以上含む現像液を用いた現像に供される、＜１＞～＜８＞のいずれか１つに記載の感光性樹脂組成物。
＜１０＞再配線層用層間絶縁膜の形成に用いられる、＜１＞～＜９＞のいずれか１つに記載の感光性樹脂組成物。
＜１１＞＜１＞～＜１０＞のいずれか１つに記載の感光性樹脂組成物を硬化してなる硬化膜。
＜１２＞膜厚が１～３０μｍである、＜１１＞に記載の硬化膜。
＜１３＞＜１１＞または＜１２＞に記載の硬化膜を２層以上有する、積層体。
＜１４＞＜１１＞または＜１２＞に記載の硬化膜を３～７層以上有する、積層体。
＜１５＞上記硬化膜の間に金属層を有する、＜１３＞または＜１４＞に記載の積層体。
＜１６＞＜１＞～＜１０＞のいずれか１つに記載の感光性樹脂組成物を基板に適用して膜を形成する膜形成工程を含む、硬化膜の製造方法。
＜１７＞上記膜を露光する露光工程および上記膜を現像する現像工程を有する、＜１６＞に記載の硬化膜の製造方法。
＜１８＞上記現像に用いられる現像液が有機溶剤を９０質量％以上含む、＜１７＞に記載の硬化膜の製造方法。
＜１９＞上記膜を８０～４５０℃で加熱する工程を含む、＜１６＞～＜１８＞のいずれか１つに記載の硬化膜の製造方法。
＜２０＞＜１６＞～＜１９＞のいずれか１つに記載の硬化膜の製造方法を複数回行なう、積層体の製造方法。
＜２１＞＜１１＞もしくは＜１２＞に記載の硬化膜または＜１３＞～＜１５＞のいずれか１つに記載の積層体を有する、半導体デバイス。
＜２２＞ 下記式（Ｂ１）または式（Ｂ２）で表される熱塩基発生剤；

式（Ｂ１）、（Ｂ２）中、Ｒ^１、Ｒ^２およびＲ^３はそれぞれ独立に第三級アミン構造を有しない有機基、ハロゲン原子または水素原子である、ただし、Ｒ^１およびＲ^２が同時に水素原子であることはない、また、Ｒ^１、Ｒ^２およびＲ^３がカルボキシル基を有することはない。
＜２３＞有機溶剤を９０質量％以上含む現像液を用いて現像する感光性樹脂組成物に用いられる、＜２２＞に記載の熱塩基発生剤。<1> At least one thermobase generator selected from the group consisting of a thermobase generator represented by the following formula (B1) and a thermobase generator represented by the formula (B2).
At least one polymer precursor selected from the group consisting of polyimide precursors and polybenzoxazole precursors, and
Including photosensitizer
A photosensitive resin composition having a total content of acid groups and acid generating groups contained in the polymer precursor and the photosensitive agent of 0.5 mmol / g or less;

In formulas (B1) and (B2), ^R1 , ^R2 and R3 are organic groups, halogen atoms or hydrogen atoms that do not independently have a ^tertiary amine structure, respectively, except that ^R1 and ^R2 are simultaneous. It is not a hydrogen atom, and R ¹ , R ² and R ³ do not have a carboxyl group.
<2> The photosensitive resin composition according to <1>, wherein the base generation temperature of the thermal base generator is 120 ° C. or higher and 200 ° C. or lower.
<3> The photosensitive resin composition according to <1> or <2>, wherein the pKa of the thermal base generator is larger than 7.
<4> The photosensitive resin composition according to any one of <1> to <3>, wherein the polymer precursor contains a polyimide precursor.
<5> The photosensitive resin composition according to <4>, wherein the polyimide precursor is represented by the following formula (1);

In formula (1), A ¹ and A ² independently represent an oxygen atom or NH, R ¹¹¹ represents a divalent organic group, R ¹¹⁵ represents a tetravalent organic group, and R ¹¹³ and R ¹¹⁴ independently represents a hydrogen atom or a monovalent organic group.
<6> The photosensitive resin composition according to any one of <1> to <5>, wherein the molar extinction coefficient of the thermal base generator at a wavelength of 365 nm is 100 l / (mol · cm) or less.
<7> The photosensitive resin according to any one of <1> to <6>, wherein the thermal base generator contains a thermal base generator that generates a base having a pKa of a conjugate acid of 10 or more by heating. Composition.
<8> The photosensitive resin composition according to any one of <1> to <7>, wherein the photosensitive agent contains a photopolymerization initiator.
<9> The photosensitive resin composition according to any one of <1> to <8>, which is subjected to development using a developing solution containing 90% by mass or more of an organic solvent.
<10> The photosensitive resin composition according to any one of <1> to <9>, which is used for forming an interlayer insulating film for a rewiring layer.
<11> A cured film obtained by curing the photosensitive resin composition according to any one of <1> to <10>.
<12> The cured film according to <11>, which has a film thickness of 1 to 30 μm.
<13> A laminated body having two or more layers of the cured film according to <11> or <12>.
<14> A laminate having 3 to 7 or more layers of the cured film according to <11> or <12>.
<15> The laminate according to <13> or <14>, which has a metal layer between the cured films.
<16> A method for producing a cured film, which comprises a film forming step of applying the photosensitive resin composition according to any one of <1> to <10> to a substrate to form a film.
<17> The method for producing a cured film according to <16>, which comprises an exposure step for exposing the film and a developing step for developing the film.
<18> The method for producing a cured film according to <17>, wherein the developer used for the development contains 90% by mass or more of an organic solvent.
<19> The method for producing a cured film according to any one of <16> to <18>, which comprises a step of heating the film at 80 to 450 ° C.
<20> A method for producing a laminated body, wherein the method for producing a cured film according to any one of <20> and <19> is performed a plurality of times.
<21> A semiconductor device having the cured film according to <11> or <12> or the laminate according to any one of <13> to <15>.
<22> A thermal base generator represented by the following formula (B1) or formula (B2);

In formulas (B1) and (B2), ^R1 , ^R2 and R3 are organic groups, halogen atoms or hydrogen atoms that do not independently have a ^tertiary amine structure, respectively, except that ^R1 and ^R2 are simultaneous. It is not a hydrogen atom, and R ¹ , R ² and R ³ do not have a carboxyl group.
<23> The thermal base generator according to <22>, which is used in a photosensitive resin composition developed using a developing solution containing 90% by mass or more of an organic solvent.

The photosensitive resin composition of the present invention is comprehensively excellent in storage stability, mechanical properties, developer solubility in unexposed areas, and lithographic properties, which are required for use in interlayer insulating films, rewiring layers, and the like. Further, it has become possible to provide a cured film, a laminate, a method for producing a cured film, a method for producing a laminate, a semiconductor device, and a thermal base generator using the above-mentioned photosensitive resin composition.

Hereinafter, the contents of the present invention will be described in detail. In addition, in this specification, "-" is used in the meaning which includes the numerical values described before and after it as the lower limit value and the upper limit value.

The description of the components in the present invention described below may be based on the representative embodiments of the present invention, but the present invention is not limited to such embodiments.
In the notation of a group (atomic group) in the present specification, the notation not describing substitution and non-substitution includes those having no substituent as well as those having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
As used herein, the term "exposure" includes not only exposure using light but also drawing using particle beams such as electron beams and ion beams, unless otherwise specified. Further, as the light used for exposure, generally, the emission line spectrum of a mercury lamp, far ultraviolet rays typified by an excimer laser, extreme ultraviolet rays (EUV light), X-rays, active rays such as electron beams, or radiation can be mentioned.
As used herein, "(meth) acrylate" means both "acrylate" and "methacrylate", or either, and "(meth) acrylic" means both "acrylic" and "methacrylic", or. Representing either, "(meth) acrylic" represents both "acryloyl" and "methacrylic", or either.
In the present specification, the term "process" is included in this term not only as an independent process but also as long as the intended action of the process is achieved even if it cannot be clearly distinguished from other processes. ..
As used herein, the solid content is the mass percentage of other components excluding the solvent with respect to the total mass of the composition. Further, the temperature in the present specification is 23 ° C. unless otherwise specified.
In the present specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are defined as polystyrene-equivalent values according to gel permeation chromatography (GPC measurement) unless otherwise specified. In the present specification, for example, HLC-8220 (manufactured by Tosoh Corporation) is used as the weight average molecular weight (Mw) and the number average molecular weight (Mn), and guard columns HZ-L, TSKgel Super HZM-M, and TSKgel are used as columns. It can be obtained by using Super HZ4000, TSKgel Super HZ3000 and TSKgel Super HZ2000 (manufactured by Tosoh Corporation). Unless otherwise specified, the eluent shall be measured using THF (tetrahydrofuran). Further, unless otherwise specified, a detector having a wavelength of 254 nm of UV rays (ultraviolet rays) is used for detection.

The photosensitive resin composition of the present invention (hereinafter, may be simply referred to as "the composition of the present invention" or "the resin composition of the present invention") is a thermobase generator represented by the formula (B1) and a formula. At least one thermobase generator selected from the group consisting of the thermobase generator represented by (B2) (hereinafter, may be referred to as "specific thermobase generator"), a polyimide precursor and a poly. It contains at least one polymer precursor selected from the group consisting of benzoxazole precursors and a photosensitizer, and the total content of the acid group and the acid generating group contained in the polymer precursor and the photosensitizer (hereinafter referred to as “)”. This amount may be referred to as "amount of acid group or the like"), which is characterized by being 0.5 mmol / g or less. By adopting this configuration, a photosensitive resin composition having comprehensively excellent storage stability, mechanical properties, developer solubility in unexposed areas and lithographic properties can be obtained. The reasons for solving the above problems, including estimation, are considered as follows.
By reducing the amount of acid groups and the like contained in the polymer precursor and the like in the photosensitive resin composition, it was possible to obtain a material that can be rapidly developed with a low-polarity organic solvent. A thermosetting film formed from a photosensitive resin composition that can be developed with an organic solvent generally has low hygroscopicity, and is excellent in adhesion to a substrate and device reliability. On the other hand, since the amount of acid groups and the like in the polymer precursor and the like is small, the cyclization reaction of the polymer precursor tends to proceed when the basic compound is present in the composition. Then, the storage stability is lowered. In the present invention, the polymer precursor contained in the photosensitive resin composition is heated by using a specific thermal base generator which is generally neutral before thermal decomposition and has a structure in which a base is generated after thermal decomposition. The photosensitive resin composition could be stably stored while maintaining good curability. Further, the specific thermal base generator is preferably nonionic, whereby the resin composition can be further improved in organic solvent developability.

式（Ｂ１）、（Ｂ２）中、Ｒ^１、Ｒ^２およびＲ^３はそれぞれ独立に第三級アミン構造を有しない有機基、ハロゲン原子または水素原子である。ただし、Ｒ^１およびＲ^２が同時に水素原子であることはない。また、Ｒ^１、Ｒ^２およびＲ^３がカルボキシル基を有することはない。
なお、本明細書で第三級アミン構造とは、３価の窒素原子の３つの結合手がいずれも炭化水素系の炭素原子と共有結合している構造を指す。したがって、結合した炭素原子がカルボニル基をなす炭素原子の場合、つまり窒素原子とともにアミド基を形成する場合はこの限りではない。本発明において、上記特定の熱塩基発生剤に含まれる有機基が第三級アミン構造を有しないことにより、レジスト液の保管時に、溶液中でポリマーのイミド化反応が抑制され、レジスト液の保存性に優れる。また、各置換基がカルボキシル基を有さないことにより、有機溶剤への溶解性に優れ、現像性に優れる。<Specific thermal base generator>
The photosensitive resin composition of the present invention contains a thermobase generator (specific thermobase generator) represented by the formula (B1) or the formula (B2).

In formulas (B1) and (B2), ^R1 , ^R2 and R3 are organic groups, halogen atoms or hydrogen atoms which do not independently have a ^tertiary amine structure. However, R ¹ and R ² are not hydrogen atoms at the same time. Further, R ¹ , R ² and R ³ do not have a carboxyl group.
In the present specification, the tertiary amine structure refers to a structure in which all three bonds of a trivalent nitrogen atom are covalently bonded to a hydrocarbon-based carbon atom. Therefore, this does not apply when the bonded carbon atom is a carbon atom forming a carbonyl group, that is, when an amide group is formed together with a nitrogen atom. In the present invention, since the organic group contained in the specific thermal base generator does not have a tertiary amine structure, the imidization reaction of the polymer in the solution is suppressed during the storage of the resist solution, and the resist solution is stored. Excellent in sex. Further, since each substituent does not have a carboxyl group, it is excellent in solubility in an organic solvent and excellent in developability.

In formulas (B1) and (B2), it is preferable that at least one of ^R1 , ^R2 and R3 contains a cyclic structure, and it is more preferable that at least ^two of them contain a cyclic structure. The cyclic structure may be either a monocyclic ring or a condensed ring, and a monocyclic ring or a condensed ring in which two monocyclic rings are condensed is preferable. The single ring is preferably a 5-membered ring or a 6-membered ring, and preferably a 6-membered ring. As the monocycle, a cyclohexane ring and a benzene ring are preferable, and a cyclohexane ring is more preferable. By including the cyclic structure in this way, the solubility in the organic solvent is enhanced, and the basicity and boiling point of the amine generated by the thermal decomposition are high, so that the imidization reaction of the polymer is promoted more efficiently.

More specifically, R ¹ and R ² are a hydrogen atom, an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, still more preferably 3 to 12 carbon atoms), and an alkenyl group (preferably 2 to 24 carbon atoms). , 2-18 is more preferred, 3-12 is even more preferred), aryl groups (6-22 carbons are preferred, 6-18 are more preferred, 6-10 are even more preferred), or arylalkyl groups (7 carbons). ~ 25 is preferable, 7 to 19 is more preferable, and 7 to 12 is even more preferable). These groups may have a substituent T, which will be described later, as long as the effects of the present invention are exhibited. R ¹ and R ² may be coupled to each other to form a ring. As the ring to be formed, a 4- to 7-membered nitrogen-containing heterocycle is preferable. In particular, R ¹ and R ² may have a substituent T, which may be chain-like, cyclic, linear or branched (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, 3 to 18). 12 is more preferred), and cycloalkyl groups that may have a substituent T (preferably 3 to 24 carbon atoms, more preferably 3 to 18 carbon atoms, still more preferably 3 to 12). Preferably, a cyclohexyl group which may have a substituent T is even more preferred.

Examples of R ³ include an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms) and an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, 6 to 18). ~ 10 is more preferred), alkenyl groups (preferably 2 to 24 carbon atoms, more preferably 2 to 12), arylalkyl groups (preferably 7 to 23 carbon atoms, 7 to 19 are more preferred). Preferably, 7 to 12 is more preferable), an arylalkenyl group (preferably 8 to 24 carbon atoms, more preferably 8 to 20 carbon atoms, still more preferably 8 to 16 carbon atoms), and an alkoxyl group (preferably 1 to 24 carbon atoms, 2 to 2 to 24). 18 is more preferred, 3-12 is even more preferred), aryloxy groups (6-22 carbons are preferred, 6-18 are more preferred, 6-12 are even more preferred), or arylalkyloxy groups (7- to 12 carbons). 23 is preferable, 7 to 19 is more preferable, and 7 to 12 is even more preferable). Among them, a cycloalkyl group (preferably 3 to 24 carbon atoms, more preferably 3 to 18 carbon atoms, still more preferably 3 to 12 carbon atoms), an arylalkenyl group, and an arylalkyloxy group are preferable. R ³ may be further substituted with a substituent T within the range in which the effect of the present invention is exhibited.

式中、Ｒ^１１およびＲ^１２、ならびに、Ｒ^３１およびＲ^３２は、それぞれ、式（Ｂ１）におけるＲ^１およびＲ^２と同じである。
Ｒ^１３はアルキル基（炭素数１～２４が好ましく、２～１８がより好ましく、３～１２がさらに好ましい）、アルケニル基（炭素数２～２４が好ましく、２～１８がより好ましく、３～１２がさらに好ましい）、アリール基（炭素数６～２２が好ましく、６～１８がより好ましく、６～１２がさらに好ましい）、アリールアルキル基（炭素数７～２３が好ましく、７～１９がより好ましく、７～１２がさらに好ましい）であり、本発明の効果を奏する範囲で置換基Ｔを有していてもよい。なかでも、Ｒ^１３はアリールアルキル基が好ましい。The compound represented by the formula (B1) is preferably a compound represented by the following formula (B1-1) or the following formula (B1-2).

In the formula, R ¹¹ and R ¹² , and R ³¹ and R ³² are the same as R ¹ and R ² in the formula (B1), respectively.
R ¹³ has an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, further preferably 3 to 12 carbon atoms) and an alkenyl group (preferably 2 to 24 carbon atoms, more preferably 2 to 18 carbon atoms) and 3 to 12 carbon atoms. Is more preferable), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, further preferably 6 to 12 carbon atoms), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19 carbon atoms). 7 to 12 is more preferable), and the substituent T may be provided as long as the effect of the present invention is exhibited. Of these, an arylalkyl group is preferable for ^R13 .

R ³³ and R ³⁴ independently have a hydrogen atom, an alkyl group (preferably 1 to 12 carbon atoms, more preferably 1 to 8 carbon atoms, still more preferably 1 to 3 carbon atoms), and an alkenyl group (preferably 2 to 12 carbon atoms). , 2 to 8 are more preferable, 2 to 3 are more preferable), aryl groups (6 to 22 carbon atoms are preferable, 6 to 18 are more preferable, 6 to 10 are more preferable), and arylalkyl groups (7 to 7 to carbon atoms are more preferable). 23 is preferable, 7 to 19 is more preferable, and 7 to 11 is even more preferable), and a hydrogen atom is preferable.

^R35 has an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, further preferably 3 to 8 carbon atoms) and an alkenyl group (preferably 2 to 12 carbon atoms, more preferably 2 to 12 carbon atoms, 3 to 12 carbon atoms). 8 is more preferred), aryl groups (6 to 22 carbon atoms are preferred, 6 to 18 are more preferred, 6 to 12 are even more preferred), arylalkyl groups (7 to 23 carbon atoms are preferred, 7 to 19 are more preferred). , 7-12 is more preferable), and an aryl group is preferable.

Ｒ^１１およびＲ^１２は式（Ｂ１－１）におけるＲ^１１およびＲ^１２と同義である。
Ｒ^１５およびＲ^１６は水素原子、アルキル基（炭素数１～１２が好ましく、１～６がより好ましく、１～３がさらに好ましい）、アルケニル基（炭素数２～１２が好ましく、２～６がより好ましく、２～３がさらに好ましい）、アリール基（炭素数６～２２が好ましく、６～１８がより好ましく、６～１０がさらに好ましい）、アリールアルキル基（炭素数７～２３が好ましく、７～１９がより好ましく、７～１１がさらに好ましい）であり、水素原子またはメチル基が好ましい。
Ｒ^１７はアルキル基（炭素数１～２４が好ましく、１～１２がより好ましく、３～８がさらに好ましい）、アルケニル基（炭素数２～１２が好ましく、２～１２がより好ましく、３～８がさらに好ましい）、アリール基（炭素数６～２２が好ましく、６～１８がより好ましく、６～１２がさらに好ましい）、アリールアルキル基（炭素数７～２３が好ましく、７～１９がより好ましく、７～１２がさらに好ましい）であり、なかでもアリール基が好ましい。As the compound represented by the formula (B1-1), the compound represented by the formula (B1-1a) is also preferable.

R ¹¹ and R ¹² are synonymous with R ¹¹ and R ¹² in equation (B1-1).
R ¹⁵ and R ¹⁶ are a hydrogen atom, an alkyl group (preferably 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, still more preferably 1 to 3 carbon atoms), and an alkenyl group (preferably 2 to 12 carbon atoms, 2 to 6 carbon atoms). More preferably, 2 to 3 are more preferable), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, still more preferably 6 to 10), an arylalkyl group (preferably 7 to 23 carbon atoms, 7). ~ 19 is more preferable, and 7 to 11 are more preferable), and a hydrogen atom or a methyl group is preferable.
R ¹⁷ has an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, further preferably 3 to 8 carbon atoms) and an alkenyl group (preferably 2 to 12 carbon atoms, more preferably 2 to 12 carbon atoms) and 3 to 8 carbon atoms. Is more preferable), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, further preferably 6 to 12 carbon atoms), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19 carbon atoms). 7 to 12 is more preferable), and an aryl group is particularly preferable.

The molecular weight of the specific thermal base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less. The lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more. When the molecular weight of the specific thermal base generator is in the above range, the solubility in an organic solvent is excellent and the developability is not deteriorated. In addition, the decomposed product after thermal decomposition is less likely to remain in the thermosetting film, and the device reliability is not impaired.

The base generation temperature of the specific thermal base generator is preferably 120 ° C. or higher and 200 ° C. or lower, more preferably 130 ° C. or higher and 180 ° C. or lower, and further preferably 140 ° C. or higher and 170 ° C. or lower. By controlling this temperature, it is possible to more accurately promote curing by cyclization of the polymer precursor. The base generation temperature is measured according to the description of Examples described later.
Further, the difference (maximum temperature-base generation temperature) between the base generation temperature of a specific thermal base generator and the maximum temperature at the time of heating when the polymer precursor is heated for cyclization is 5 ° C. or higher and 100 ° C. or lower. It is preferably 10 ° C. or higher and 80 ° C. or lower, and even more preferably 15 ° C. or higher and 60 ° C. or lower. By setting it in such a range, the mechanical characteristics are further improved.

The base generated by heating the specific thermal base generator preferably has a pKa of its conjugate acid of 10 or more, more preferably 11 or more, and even more preferably 12 or more. It is practical that the upper limit is 15 or less. Due to this strong basicity, the curability of the polymer precursor becomes more effective.

The pKa of the specific thermal base generator is preferably larger than 7, more preferably 8 or more, and even more preferably 9 or more. As an upper limit, 12 or less is practical. By setting pKa within the above range, the basicity of the thermal base generator becomes weak during storage, the polymer precursor is not cured, and its stability is further enhanced.
The particular thermobase generator preferably consists of a neutral molecule. Neutral means electrically neutral and is preferably not a salt formed from anions or cations. It is preferable that each atom in the molecule is connected by a covalent bond and the total electric charge is zero.
The pka is measured according to the method described in Examples described later.

The specific thermal base generator contained in the photosensitive resin composition used in the present invention preferably has a molar extinction coefficient of the thermal base generator at a wavelength of 365 nm of 500 l / (mol · cm) or less, preferably 300 l / (. It is more preferably mol · cm) or less, and even more preferably 100 l / (mol · cm) or less. As the lower limit value, 50 l / (mol · cm) or more is practical. UV-2600 (manufactured by Shimadzu Corporation) was adopted as the measuring device for the molar extinction coefficient. The measurement was performed on three samples, and the value obtained by arithmetically averaging the results was adopted. Other details were carried out according to the contents described in JISK0115: 2004 (Japanese Industrial Standards). In the present invention, as described above, a thermobase generator in which light (i-line) absorption at a wavelength of 365 nm is suppressed to a low level is preferable. Thereby, more excellent mechanical properties can be realized without deteriorating the light transmittance and the lithographic property at the time of exposure.

As the substituent T, an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, particularly preferably 1 to 6 carbon atoms) and an alkenyl group (preferably 2 to 24 carbon atoms, 2 to 12 carbon atoms are more preferable). 2 to 6 are particularly preferable), an alkoxyl group (preferably 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, still more preferably 1 to 3), a hydroxyalkyl group (preferably 1 to 12 carbon atoms, 1 to 6 carbon atoms). More preferably, 1 to 3 is more preferable), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, still more preferably 6 to 10 carbon atoms), and a heteroaryl group (preferably 1 to 12 carbon atoms). 6 to 6 are more preferable, 1 to 4 are even more preferable; heteroatoms include, for example, a nitrogen atom, an oxygen atom and a sulfur atom), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19 carbon atoms). 7-11 is more preferred), hydroxyl group, primary or secondary amino group (may be 0-24 carbon atoms, 0-12 carbon atoms, 0-6 carbon atoms). , A quaternary ammonium group (may have 3 to 24 carbon atoms, 3 to 12 carbon atoms, 3 to 6 carbon atoms), a thiol group, an acyl group (preferably 2 to 12 carbon atoms). , 2 to 6 are more preferable, 2 to 3 are particularly preferable), an acyloxy group (2 to 12 carbon atoms are preferable, 2 to 6 are more preferable, 2 to 3 are particularly preferable), and an aryloyl group (7 to 23 carbon atoms is particularly preferable). Preferably, 7 to 19 is more preferable, 7 to 11 is particularly preferable), an aryloyloxy group (7 to 23 carbon atoms are preferable, 7 to 19 is more preferable, 7 to 11 is particularly preferable), and a (meth) acryloyl group. , (Meta) acryloyloxy group, halogen atom (eg, fluorine atom, chlorine atom, bromine atom, iodine atom), oxo group (= O), imino group (may be NH), alkylidene group (= C) ( ^RN ) ₂ ) and the like can be mentioned. A hetero atom may be interposed in the alkylene chain of the substituent T. The alkyl group, alkenyl group, aryl group, and arylalkyl group of the substituent T may be further substituted with other substituents.

^RN is a hydrogen atom or an organic group. As the organic group, an alkyl group (preferably 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, further preferably 1 to 3 carbon atoms) and an aryl group (preferably 6 to 22 carbon atoms, 6 to 18 carbon atoms are more preferable, 6 to 6). ~ 10 is more preferable), or an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19 carbon atoms, still more preferably 7 to 11).

Examples of the specific thermal base generator include the compounds shown in the examples.

In the photosensitive resin composition, the content of the specific thermal base generator is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, and 0.5% by mass, based on the solid content. It is more preferably mass% or more. The upper limit is preferably 5% by mass or less, more preferably 4% by mass or less, and further preferably 3% by mass or less.
With respect to 100 parts by mass of the polymer precursor, it is preferably 0.1 part by mass or more, more preferably 0.3 part by mass or more, and further preferably 0.5 part by mass or more. The upper limit is preferably 5 parts by mass or less, more preferably 4 parts by mass or less, and further preferably 3 parts by mass or less.
By setting this amount within the above range, the action of a specific thermal base generator can be sufficiently exerted, and the amount of the residue of the pyrolyzed product can be suppressed to the extent that it does not affect the device reliability. preferable.
As the specific thermobase generator, one kind or a plurality of kinds may be used. When using a plurality of items, the total amount is within the above range.
Further, the specific thermobase generator may or may not be used in combination with other thermobase generators.
As one embodiment of the present invention, the thermobase generator contained in the photosensitive resin composition of the present invention preferably has a content of the specific thermobase generator of 50% by mass or more, preferably 80% by mass. The above is more preferable, 90% by mass or more is further preferable, 95% by mass or more is further preferable, and 99% by mass or more is further preferable.

<Polymer precursor>
The photosensitive resin composition of the present invention contains at least one polymer precursor selected from the group consisting of a polyimide precursor and a polybenzoxazole precursor. The total content of the acid group and the acid generating group contained in the polymer precursor is preferably 0.5 mmol / g or less. As the polymer precursor, a polyimide precursor is more preferable, and a polyimide precursor containing a structural unit represented by the following formula (1) is further preferable.

Ａ^１およびＡ^２は、それぞれ独立に酸素原子またはＮＨを表し、Ｒ^１１１は、２価の有機基を表し、Ｒ^１１５は、４価の有機基を表し、Ｒ^１１３およびＲ^１１４は、それぞれ独立に、水素原子または１価の有機基を表す。－Ｃ（＝Ｏ）－Ａ^１－Ｒ^１１４および－Ｃ（＝Ｏ）－Ａ^２－Ｒ^１１３は、それぞれ酸基および酸発生基を有しない基であることが好ましい。<< Polyimide precursor >>
The polyimide precursor preferably contains a structural unit represented by the following formula (1). With such a configuration, a composition having higher film strength can be obtained.

A ¹ and A ² independently represent an oxygen atom or NH, R ¹¹¹ represents a divalent organic group, R ¹¹⁵ represents a tetravalent organic group, and R ¹¹³ and R ¹¹⁴ are independent, respectively. Represents a hydrogen atom or a monovalent organic group. It is preferable that -C (= O) -A ¹ -R ¹¹⁴ and -C (= O) -A ² -R ¹¹³ are groups having no acid group and no acid generating group, respectively.

A ¹ and A ² are independently oxygen atoms or NH, and oxygen atoms are preferable.

R ¹¹¹ represents a divalent organic group. Examples of the divalent organic group include a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic group, an aromatic heterocyclic group, or a group consisting of a combination thereof, and the number of carbon atoms is 2 to 20. A linear aliphatic group, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group consisting of a combination thereof. Is preferable, and an aromatic group having 6 to 20 carbon atoms is more preferable.
R ¹¹¹ is preferably derived from diamine. Examples of the diamine used for producing the polyimide precursor include linear or branched aliphatic, cyclic aliphatic or aromatic diamines. Only one kind of diamine may be used, or two or more kinds of diamines may be used.
Specifically, the diamine is derived from a linear aliphatic group having 2 to 20 carbon atoms, a branched or cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a combination thereof. It is preferably a diamine containing an aromatic group having 6 to 20 carbon atoms, and more preferably a diamine containing an aromatic group. Examples of aromatic groups include:

In the formula, A is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be replaced with a single bond or a fluorine atom, —O—, —C (= O) −, —S—, —S. (= O) _2- , -NHCO-, and preferably a group selected from a combination thereof, a single bond, an alkylene group having 1 to 3 carbon atoms which may be substituted with a fluorine atom, -O- , -C (= O)-, -S- and -SO _2-- , more preferably -CH _2- , -O-, -S-, -SO _2- , -C ( It is more preferably a divalent group selected from the group consisting of CF ₃ ) _2- and —C (CH ₃ ) _2- .

Specific examples of the diamine include 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane and 1,6-diaminohexane; 1,2- or 1 , 3-Diaminocyclopentane, 1,2-, 1,3- or 1,4-diaminocyclohexane, 1,2-,1,3- or 1,4-bis (aminomethyl) cyclohexane, bis- (4-) Aminocyclohexyl) methane, bis- (3-aminocyclohexyl) methane, 4,4'-diamino-3,3'-dimethylcyclohexylmethane and isophoronediamine; meta and paraphenylenediamine, diaminotoluene, 4,4'-and 3 , 3'-diaminobiphenyl, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether, 4,4'-and 3,3'-diaminodiphenylmethane, 4,4'-and 3,3'-diaminodiphenyl sulfone , 4,4'-and 3,3'-diaminodiphenylsulfide, 4,4'-and 3,3'-diaminobenzophenone, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'- Dimethyl-4,4'-diaminobiphenyl (4,4'-diamino-2,2'-dimethylbiphenyl), 3,3'-dimethoxy-4,4'-diaminobiphenyl, 2,2-bis (4-amino) Phenyl) propane, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis (3-hydroxy-4-aminophenyl) propane, 2,2-bis (3-hydroxy-4-aminophenyl) ) Hexafluoropropane, 2,2-bis (3-amino-4-hydroxyphenyl) propane, 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane, bis (3-amino-4-hydroxy) Phenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, 4,4'-diaminoparatelphenyl, 4,4'-bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) ) Phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (2-aminophenoxy) phenyl] sulfone, 1,4-bis (4-aminophenoxy) benzene, 9,10- Bis (4-aminophenyl) anthracene, 3,3'-dimethyl-4,4'-diaminodiphenylsulfone, 1,3-bis (4-aminophenoxy) Nzen, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenyl) benzene, 3,3'-diethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl- 4,4'-Diaminodiphenylmethane, 4,4'-diaminooctafluorobiphenyl, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 2,2-bis [4- (4-aminophenoxy) Phenyl] Hexafluoropropane, 9,9-bis (4-aminophenyl) -10-hydroanthracene, 3,3', 4,4'-tetraaminobiphenyl, 3,3', 4,4'-tetraaminodiphenyl ether , 1,4-diaminoanthraquinone, 1,5-diaminoanthraquinone, 3,3-dihydroxy-4,4'-diaminobiphenyl, 9,9'-bis (4-aminophenyl) fluorene, 4,4'-dimethyl- 3,3'-Diaminodiphenylsulfone, 3,3', 5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 2- (3', 5'-diaminobenzoyloxy) ethyl methacrylate, 2,4- And 2,5-diaminocumen, 2,5-dimethyl-paraphenylenediamine, acetoguanamine, 2,3,5,6-tetramethyl-paraphenylenediamine, 2,4,6-trimethyl-metaphenylenediamine, bis ( 3-Aminopropyl) Tetramethyldisiloxane, 2,7-diaminofluorene, 2,5-diaminopyridine, 1,2-bis (4-aminophenyl) ethane, diaminobenzanilide, ester of diaminobenzoic acid, 1,5 -Diaminonaphthalene, diaminobenzotrifluoride, 1,3-bis (4-aminophenyl) hexafluoropropane, 1,4-bis (4-aminophenyl) octafluorobutane, 1,5-bis (4-aminophenyl) Decafluoropentane, 1,7-bis (4-aminophenyl) tetradecafluoroheptane, 2,2-bis [4- (3-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [4- (2) -Aminophenoxy) Phenyl] Hexafluoropropane, 2,2-bis [4- (4-Aminophenoxy) -3,5-dimethylphenyl] Hexafluoropropane, 2,2-Bis [4- (4-Aminophenoxy) -3,5-bis (trifluoromethyl) phenyl] hexafluoropropane, parabis (4-amino-2-trifluoromethi) Ruphenoxy) Benzene, 4,4'-bis (4-amino-2-trifluoromethylphenoxy) biphenyl, 4,4'-bis (4-amino-3-trifluoromethylphenoxy) biphenyl, 4,4'- Bis (4-amino-2-trifluoromethylphenoxy) diphenylsulfone, 4,4'-bis (3-amino-5-trifluoromethylphenoxy) diphenylsulfone, 2,2-bis [4- (4-amino-) 3-Trifluoromethylphenoxy) phenyl] hexafluoropropane, 3,3', 5,5'-tetramethyl-4,4'-diaminobiphenyl, 4,4'-diamino-2,2'-bis (trifluoro) Included are at least one diamine selected from methyl) biphenyl, 2,2', 5,5', 6,6'-hexafluorotridin and 4,4'-diaminoquaterphenyl.

Further, the diamines (DA-1) to (DA-18) shown below are also preferable.

Further, a diamine having at least two or more alkylene glycol units in the main chain is also mentioned as a preferable example. A diamine containing two or more of one or both of an ethylene glycol chain and a propylene glycol chain in one molecule is preferable, and a diamine containing no aromatic ring is more preferable. Specific examples include Jeffamine (registered trademark) KH-511, Jeffamine (registered trademark) ED-600, Jeffamine (registered trademark) ED-900, Jeffamine (registered trademark) ED-2003, and Jeffamine (registered trademark). ) EDR-148, Jeffamine® EDR-176, D-200, D-400, D-2000, D-4000 (trade name, manufactured by HUNTSMAN), 1- (2- (2- (2) -Aminopropoxy) ethoxy) propoxy) propane-2-amine, 1- (1- (1- (2-aminopropoxy) propoxy-2-yl) oxy) propane-2-amine, etc., but are limited to these. Not done.
Jeffamine® KH-511, Jeffamine® ED-600, Jeffamine® ED-900, Jeffamine® ED-2003, Jeffamine® EDR-148, The structure of Jeffermin® EDR-176 is shown below.

In the above, x, y, and z are average values.

R ¹¹¹ is preferably represented by −Ar ⁰ − L ⁰ − Ar ⁰ − from the viewpoint of the flexibility of the obtained cured film. However, Ar ⁰ is independently an aromatic hydrocarbon group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, particularly preferably 6 to 10 carbon atoms), and a phenylene group is preferable. L ⁰ is a single bond, an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -C (= O)-, -S-, -S (= O). Represents _2- , -NHCO-, and groups selected from these combinations. The preferred range is synonymous with A in AR-8 described above.

Ｒ^５０～Ｒ^５７は、それぞれ独立に水素原子、フッ素原子または１価の有機基であり、Ｒ^５０～Ｒ^５７の少なくとも１つはフッ素原子、メチル基、フルオロメチル基、ジフルオロメチル基、または、トリフルオロメチル基である。
Ｒ^５０～Ｒ^５７の１価の有機基として、炭素数１～１０（好ましくは炭素数１～６）の無置換のアルキル基、炭素数１～１０（好ましくは炭素数１～６）のフッ化アルキル基等が挙げられる。

Ｒ^５８およびＲ^５９は、それぞれ独立にフッ素原子、フルオロメチル基、ジフルオロメチル基、または、トリフルオロメチル基である。
式（５１）または（６１）の構造を与えるジアミン化合物としては、ジメチル－４,４’－ジアミノビフェニル、２，２’－ビス（トリフルオロメチル）－４，４’－ジアミノビフェニル、２，２’－ビス（フルオロ）－４，４’－ジアミノビフェニル、４，４’－ジアミノオクタフルオロビフェニル等が挙げられる。これらの１種を用いるか、２種以上を組み合わせて用いてもよい。From the viewpoint of i-ray transmittance, R ¹¹¹ is preferably a divalent organic group represented by the following formula (51) or formula (61). In particular, a divalent organic group represented by the formula (61) is more preferable from the viewpoint of i-ray transmittance and availability.

R ⁵⁰ to R ⁵⁷ are independently hydrogen atoms, fluorine atoms or monovalent organic groups, and at least one of R ⁵⁰ to R ⁵⁷ is a fluorine atom, a methyl group, a fluoromethyl group, a difluoromethyl group, or It is a trifluoromethyl group.
As a monovalent organic group of R ⁵⁰ to R ⁵⁷ , an unsubstituted alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms) and a hook having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms). Examples thereof include an alkylated group.

R ⁵⁸ and R ⁵⁹ are independently fluorine atoms, fluoromethyl groups, difluoromethyl groups, or trifluoromethyl groups, respectively.
Examples of the diamine compound giving the structure of the formula (51) or (61) include dimethyl-4,4'-diaminobiphenyl, 2,2'-bis (trifluoromethyl) -4,4'-diaminobiphenyl, 2,2. '-Bis (fluoro) -4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl and the like can be mentioned. One of these may be used, or two or more thereof may be used in combination.

Ｒ^１１２は、上述のＡＲ－８におけるＡと同義であり、好ましい範囲も同じである。R ¹¹⁵ in the formula (1) represents a tetravalent organic group. The tetravalent organic group is preferably a group containing an aromatic ring, and a group represented by the following formula (5) or formula (6) is more preferable.

R ¹¹² is synonymous with A in AR-8 described above, and the preferred range is also the same.

Ｒ^１１５は、４価の有機基を表す。Ｒ^１１５は式（１）のＲ^１１５と同義である。Specific examples of the tetravalent organic group represented by R ¹¹⁵ in the formula (1) include a tetracarboxylic acid residue remaining after removing the acid dianhydride group from the tetracarboxylic acid dianhydride. Only one type of tetracarboxylic acid dianhydride may be used, or two or more types may be used. The tetracarboxylic acid dianhydride is preferably a compound represented by the following formula (7).

R ¹¹⁵ represents a tetravalent organic group. R ¹¹⁵ is synonymous with R ¹¹⁵ of the formula (1).

Specific examples of the tetracarboxylic acid dianhydride include pyromellitic acid, pyromellitic acid dianhydride (PMDA), 3,3', 4,4'-biphenyltetracarboxylic acid dianhydride, 3,3', 4. , 4'-diphenylsulfide tetracarboxylic acid dianhydride, 3,3', 4,4'-diphenylsulfone tetracarboxylic acid dianhydride, 3,3', 4,4'-benzophenone tetracarboxylic acid dianhydride, 3,3', 4,4'-diphenylmethanetetracarboxylic acid dianhydride, 2,2', 3,3'-diphenylmethanetetracarboxylic acid dianhydride, 2,3,3', 4'-biphenyltetracarboxylic acid Dianoxide, 2,3,3', 4'-benzophenonetetracarboxylic acid dianhydride, 4,4'-oxydiphthalic acid dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 1 , 4,5,7-naphthalenetetracarboxylic acid dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propanedi Anhydrous, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane-3,3,4,4-tetracarboxylic acid dianhydride, 1, 4,5,6-naphthalenetetracarboxylic acid dianhydride, 2,2', 3,3'-diphenyltetracarboxylic acid dianhydride, 3,4,9,10-perylenetetracarboxylic acid dianhydride, 1, 2,4,5-Naphthalenetetracarboxylic acid dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid dianhydride, 1,8,9,10-phenanthrentetracarboxylic acid dianhydride, 1,1- Bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, 1,2,3,4-benzenetetracarboxylic acid dianhydride, In addition, at least one selected from these alkyl derivatives having 1 to 6 carbon atoms and alkoxy derivatives having 1 to 6 carbon atoms is exemplified.

Further, the tetracarboxylic acid dianhydrides (DAA-1) to (DAA-5) shown below are also mentioned as preferable examples.

R ¹¹³ and R ¹¹⁴ in the formula (1) independently represent a hydrogen atom or a monovalent organic group, respectively. It is preferable that at least one of R ¹¹³ and R ¹¹⁴ contains a radically polymerizable group, and it is more preferable that both contain a radically polymerizable group. Examples of the radically polymerizable group include a group capable of a cross-linking reaction by the action of a radical, and a preferable example thereof is a group having an ethylenically unsaturated bond.
Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, a (meth) acryloyl group, and a group represented by the following formula (III).

In formula (III), ^R200 represents a hydrogen atom or a methyl group, with a methyl group being more preferred.
In formula (III), R ²⁰¹ is an alkylene group having 2 to 12 carbon atoms, −CH ₂ CH (OH) CH ₂ − or a (poly) oxyalkylene group having 4 to 30 carbon atoms (as an alkylene group having 1 carbon atom). ~ 12 is preferable, 1 to 6 is more preferable, 1 to 3 is particularly preferable; the number of repetitions is preferably 1 to 12, 1 to 6 is more preferable, and 1 to 3 is particularly preferable). The (poly) oxyalkylene group means an oxyalkylene group or a polyoxyalkylene group.
Examples of suitable R ²⁰¹ are ethylene group, propylene group, trimethylene group, tetramethylene group, 1,2-butanediyl group, 1,3-butanjiyl group, pentamethylene group, hexamethylene group, octamethylene group, dodecamethylene group. , -CH ₂ CH (OH) CH _2- , and more preferably an ethylene group, a propylene group, a trimethylene group, and -CH ₂ CH (OH) CH _2- .
Particularly preferably, ^R200 is a methyl group and ^R201 is an ethylene group.

From the viewpoint of solubility in an organic solvent, R ¹¹³ or R ¹¹⁴ is preferably a monovalent organic group. The monovalent organic group preferably contains a linear or branched alkyl group, a cyclic alkyl group, or an aromatic group, and an alkyl group substituted with an aromatic group is more preferable.
The alkyl group preferably has 1 to 30 carbon atoms (3 or more in the case of a cyclic group). The alkyl group may be linear, branched or cyclic. Examples of the linear or branched alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, a dodecyl group, a tetradecyl group and an octadecyl group. , Isobutyl group, sec-butyl group, t-butyl group, 1-ethylpentyl group, and 2-ethylhexyl group. The cyclic alkyl group may be a monocyclic cyclic alkyl group or a polycyclic cyclic alkyl group. Examples of the cyclic alkyl group of the monocycle include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group and a cyclooctyl group. Examples of the polycyclic cyclic alkyl group include an adamantyl group, a norbornyl group, a bornyl group, a phenyl group, a decahydronaphthyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a camphoroyl group, a dicyclohexyl group and a pinenyl group. Can be mentioned. Of these, the cyclohexyl group is most preferable from the viewpoint of achieving high sensitivity. Further, as the alkyl group substituted with an aromatic group, a linear alkyl group substituted with an aromatic group described later is preferable.
Examples of the aromatic group include an aromatic hydrocarbon group or an aromatic heterocyclic group.
Specific examples of the aromatic hydrocarbon group include substituted or unsubstituted benzene ring, naphthalene ring, pentalene ring, inden ring, azulene ring, heptalene ring, indacene ring, perylene ring, pentacene ring, acenaphthene ring, and phenanthrene ring. , Anthracene ring, Naphthalene ring, Chrysene ring, Triphenylene ring, Fluorene ring, Biphenyl ring and other groups having an aromatic hydrocarbon ring.
Examples of the aromatic heterocyclic group include substituted or unsubstituted pyrrole ring, furan ring, thiophene ring, pyrazole ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, triazine ring, and India. Lysine ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthylidine ring, quinoxalin ring, quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, aclysine ring, phenanthroline Examples thereof include groups having an aromatic heterocycle such as a ring, a thiantolen ring, a chromene ring, a xanthene ring, a phenoxatiin ring, a phenothiazine ring or a phenazine ring.

It is also preferable that the polyimide precursor has a fluorine atom in the constituent unit. The fluorine atom content in the polyimide precursor is preferably 10% by mass or more, more preferably 20% by mass or less. There is no particular upper limit, but 50% by mass or less is practical.

Further, for the purpose of improving the adhesion to the substrate, an aliphatic group having a siloxane structure may be copolymerized with a structural unit represented by the formula (1). Specific examples of the diamine component include bis (3-aminopropyl) tetramethyldisiloxane and bis (paraaminophenyl) octamethylpentasiloxane.

Ａ^１、Ａ^２、Ｒ^１１１、Ｒ^１１３およびＲ^１１４は、それぞれ、独立に、式（１）におけるＡ^１、Ａ^２、Ｒ^１１１、Ｒ^１１３およびＲ^１１４と同義であり、好ましい範囲も同様である。Ｒ^１１２は、式（５）におけるＲ^１１２と同義であり、好ましい範囲も同様である。The structural unit represented by the formula (1) is preferably the structural unit represented by the formula (1-A).

A ¹ , A ² , R ¹¹¹ , R ¹¹³ and R ¹¹⁴ are independently synonymous with A ¹ , A ² , R ¹¹¹ , R ¹¹³ and R ¹¹⁴ in the formula (1), respectively, and the preferred ranges are also the same. be. R ¹¹² has the same meaning as R ¹¹² in the formula (5), and the preferred range is also the same.

In the polyimide precursor, the structural unit represented by the formula (1) may be one kind, but may be two or more kinds. Further, it may contain a structural isomer of a structural unit represented by the formula (1). Further, the polyimide precursor may contain other types of structural units in addition to the structural units of the above formula (1).

As one embodiment of the polyimide precursor in the present invention, 50 mol% or more, more 70 mol% or more, particularly 90 mol% or more of all the constituent units is the polyimide precursor represented by the formula (1). Is exemplified. As an upper limit, 100 mol% or less is practical.

The weight average molecular weight (Mw) of the polyimide precursor is preferably 2000 to 500,000, more preferably 5,000 to 100,000, and further preferably 10,000 to 50,000. The number average molecular weight (Mn) is preferably 800 to 250,000, more preferably 2000 to 50000, and even more preferably 4000 to 25000.
The degree of dispersion of the molecular weight of the polyimide precursor is preferably 1.5 to 3.5, more preferably 2 to 3.

The polyimide precursor can be obtained by reacting a dicarboxylic acid or a dicarboxylic acid derivative with a diamine. Preferably, it is obtained by halogenating a dicarboxylic acid or a dicarboxylic acid derivative with a halogenating agent and then reacting with a diamine.
In the method for producing a polyimide precursor, it is preferable to use an organic solvent in the reaction. The organic solvent may be one kind or two or more kinds.
The organic solvent can be appropriately determined depending on the raw material, and examples thereof include pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone and N-ethylpyrrolidone.

In the production of the polyimide precursor, it is preferable to include a step of precipitating a solid. Specifically, the polyimide precursor in the reaction solution can be precipitated in water, and the polyimide precursor such as tetrahydrofuran can be dissolved in a soluble solvent to precipitate a solid.

Ｒ^１２１は、２価の有機基を表し、Ｒ^１２２は、４価の有機基を表し、Ｒ^１２３およびＲ^１２４は、それぞれ独立に、水素原子または１価の有機基を表す。<< Polybenzoxazole precursor >>
The polybenzoxazole precursor preferably contains a structural unit represented by the following formula (2).

R ¹²¹ represents a divalent organic group, R ¹²² represents a tetravalent organic group, and R ¹²³ and R ¹²⁴ each independently represent a hydrogen atom or a monovalent organic group.

R ¹²¹ represents a divalent organic group. The divalent organic group includes an aliphatic group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, particularly preferably 1 to 6 carbon atoms) and an aromatic group (preferably 6 to 22 carbon atoms, 6 to 14 carbon atoms). Is more preferable, and a group containing at least one of 6 to 12 is particularly preferable). Examples of the aromatic group constituting R ¹²¹ include R ¹¹¹ of the above formula (1). As the aliphatic group, a linear aliphatic group is preferable. R ¹²¹ is preferably derived from 4,4'-oxydibenzoyl chloride.
In formula (2), R ¹²² represents a tetravalent organic group. The tetravalent organic group has the same meaning as R ¹¹⁵ in the above formula (1), and the preferable range is also the same. R ¹²² is preferably derived from 2,2'-bis (3-amino-4-hydroxyphenyl) hexafluoropropane.
R ¹²³ and R ¹²⁴ independently represent a hydrogen atom or a monovalent organic group, and have the same meaning as R ¹¹³ and R ¹¹⁴ in the above formula (1), and the preferred range is also the same. It is preferable that —OR ¹²⁴ and —OR ¹²³ are groups having no acid group and acid generating group, respectively.

The polybenzoxazole precursor may contain other types of structural units in addition to the structural units of the above formula (2).
The precursor preferably contains a diamine residue represented by the following formula (SL) as another type of structural unit in that the occurrence of warpage of the cured film due to ring closure can be suppressed.

Ｚは、ａ構造とｂ構造を有し、Ｒ^１ｓは水素原子または炭素数１～１０の炭化水素基（好ましくは炭素数１～６、より好ましくは炭素数１～３）であり、Ｒ^２ｓは炭素数１～１０の炭化水素基（好ましくは炭素数１～６、より好ましくは炭素数１～３）であり、Ｒ^３ｓ、Ｒ^４ｓ、Ｒ^５ｓ、Ｒ^６ｓのうち少なくとも１つは芳香族基（好ましくは炭素数６～２２、より好ましくは炭素数６～１８、特に好ましくは炭素数６～１０）で、残りは水素原子または炭素数１～３０（好ましくは炭素数１～１８、より好ましくは炭素数１～１２、特に好ましくは炭素数１～６）の有機基で、それぞれ同一でも異なっていてもよい。ａ構造およびｂ構造の重合は、ブロック重合でもランダム重合でもよい。Ｚ部分において、好ましくは、ａ構造は５～９５モル％、ｂ構造は９５～５モル％であり、ａ＋ｂは１００モル％である。

Z has an a structure and a b structure, R ^1s is a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms, more preferably 1 to 3 carbon atoms), and R ^2s . Is a hydrocarbon group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms, more preferably 1 to 3 carbon atoms), and at least one of R ^3s , R ^4s , R ^5s , and R ^6s is aromatic. It is a group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, particularly preferably 6 to 10 carbon atoms), and the rest is a hydrogen atom or 1 to 30 carbon atoms (preferably 1 to 18 carbon atoms). It is preferably an organic group having 1 to 12 carbon atoms, particularly preferably 1 to 6) carbon atoms, and may be the same or different from each other. The polymerization of the a structure and the b structure may be block polymerization or random polymerization. In the Z portion, the a structure is preferably 5 to 95 mol%, the b structure is 95 to 5 mol%, and a + b is 100 mol%.

In the formula (SL), preferred Z includes those in which R ^5s and R ^6s in the b structure are phenyl groups. The molecular weight of the structure represented by the formula (SL) is preferably 400 to 4,000, more preferably 500 to 3,000. The molecular weight can be determined by commonly used gel permeation chromatography. By setting the molecular weight in the above range, the elastic modulus of the polybenzoxazole precursor after dehydration ring closure can be lowered, and the effect of suppressing warpage and the effect of improving solubility can be achieved at the same time.

The weight average molecular weight (Mw) of the polybenzoxazole precursor is preferably 2000 to 500,000, more preferably 5,000 to 100,000, and even more preferably 10,000 to 50,000. The number average molecular weight (Mn) is preferably 800 to 250,000, more preferably 2000 to 50000, and even more preferably 4000 to 25000.
The degree of dispersion of the molecular weight of the polybenzoxazole precursor is preferably 1.5 to 3.5, more preferably 2 to 3.

The content of the polymer precursor in the photosensitive resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, and 40% by mass, based on the total solid content of the composition. The above is further preferable, 50% by mass or more is further preferable, 60% by mass or more is further preferable, and 70% by mass or more is further preferable. Further, the content of the polymer precursor in the photosensitive resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, based on the total solid content of the composition. It is more preferably 98% by mass or less, further preferably 95% by mass or less, and even more preferably 95% by mass or less.
The photosensitive resin composition of the present invention may contain only one kind of polymer precursor, or may contain two or more kinds of polymer precursors. When two or more kinds are contained, it is preferable that the total amount is within the above range.

<Solvent>
The photosensitive resin composition of the present invention preferably contains a solvent. As the solvent, a known solvent can be arbitrarily used. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, aromatic hydrocarbons, sulfoxides, and amides.
Examples of esters include ethyl acetate, -n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone. , Δ-Valerolactone, alkylalkyloxyacetate (eg, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (eg, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.) )), 3-Alkyloxypropionic acid alkyl esters (eg, methyl 3-alkyloxypropionic acid, ethyl 3-alkyloxypropionic acid, etc. (eg, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, 3- Methyl ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (eg, methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate) Etc. (eg, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), 2-alkyloxy-2-methylpropion. Methyl acid and ethyl 2-alkyloxy-2-methylpropionate (eg, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate, ethyl pyruvate, pyruvate Suitable examples thereof include propyl acid, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate and the like.
Examples of ethers include diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, and propylene glycol. Suitable examples include monomethyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate.
As the ketones, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone and the like are preferable.
As the aromatic hydrocarbons, for example, toluene, xylene, anisole, limonene and the like are preferable.
As the sulfoxides, for example, dimethyl sulfoxide is preferable.
As the amides, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide and the like are preferable.

As the solvent, a form in which two or more kinds are mixed is also preferable from the viewpoint of improving the properties of the coated surface.
In the present invention, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ- Consists of one solvent selected from butyrolactone, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, and propylene glycol methyl ether acetate, or two or more. The mixed solvent to be mixed is preferable. The combined use of dimethyl sulfoxide and γ-butyrolactone is particularly preferred.

From the viewpoint of coatability, the solvent content is preferably such that the total solid content concentration of the photosensitive resin composition of the present invention is 5 to 80% by mass, and is preferably 5 to 75% by mass. It is more preferably 10 to 70% by mass, and even more preferably 40 to 70% by mass. The solvent content may be adjusted according to the desired thickness and coating method.
Only one type of solvent may be contained, or two or more types may be contained. When two or more kinds of solvents are contained, the total is preferably in the above range.

<Photosensitizer>
In the present invention, the photosensitive resin composition contains a photosensitive agent. The total content of the acid group and the acid generating group contained in the photosensitive agent is preferably 0.5 mmol / g or less. Examples of the photosensitive agent include a photopolymerization initiator, a photocuring accelerator and a sensitizing dye.
In the present invention, the total amount of the photosensitive agent is preferably 1 to 10% by mass of the photosensitive resin composition. The photopolymerization initiator is preferably 60% by mass or more, more preferably 70% by mass or more, and further preferably 80 to 100% by mass.

<< Photopolymerization Initiator >>
The photosensitive resin composition used in the present invention may contain a photopolymerization initiator. The photopolymerization initiator is preferably a photoradical polymerization initiator.
The photoradical polymerization initiator that can be used in the present invention is not particularly limited and may be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator having photosensitivity to light rays in the ultraviolet region to the visible region is preferable. Further, it may be an active agent that causes some action with a photoexcited sensitizer and generates an active radical.
The photoradical polymerization initiator preferably contains at least one compound having a molar extinction coefficient of at least about 50 in the range of about 300 to 800 nm (preferably 330 to 500 nm). The molar extinction coefficient of a compound can be measured using a known method. For example, it is preferable to measure at a concentration of 0.01 g / L using an ethyl acetate solvent with an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian).

When the photosensitive resin composition contains a photoradical polymerization initiator, the photosensitive resin composition of the present invention is applied to a substrate such as a semiconductor wafer to form a photosensitive resin composition layer, and then light is irradiated. Therefore, curing due to the generated radicals occurs, and the solubility in the light-irradiated portion can be reduced. Therefore, for example, by exposing the photosensitive resin composition layer through a photomask having a pattern that masks only the electrode portion, there is an advantage that regions having different solubilitys can be easily produced according to the electrode pattern. be.

As the photoradical polymerization initiator, a known compound can be arbitrarily used. For example, halogenated hydrocarbon derivatives (for example, compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.), acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazoles, oxime derivatives and the like. Oxime compounds, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketooxime ethers, aminoacetophenone compounds, hydroxyacetophenones, azo compounds, azide compounds, metallocene compounds, organic boron compounds, iron arene complexes, etc. Can be mentioned. For details thereof, the description in paragraphs 0165 to 0182 of JP-A-2016-0273557 can be referred to, and the contents thereof are incorporated in the present specification.

As the ketone compound, for example, the compound described in paragraph 0087 of JP-A-2015-087611 is exemplified, and the content thereof is incorporated in the present specification. As a commercially available product, KayaCure DETX (manufactured by Nippon Kayaku Co., Ltd.) is also preferably used.

As the photoradical polymerization initiator, a hydroxyacetophenone compound, an aminoacetophenone compound, and an acylphosphine compound can also be preferably used. More specifically, for example, the aminoacetophenone-based initiator described in JP-A No. 10-291969 and the acylphosphine oxide-based initiator described in Japanese Patent No. 4225898 can also be used.
As the hydroxyacetophenone-based initiator, IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (trade names: all manufactured by BASF) can be used.
As the aminoacetophenone-based initiator, commercially available products IRGACURE 907, IRGACURE 369, and IRGACURE 379 (trade names: all manufactured by BASF) can be used.
As the aminoacetophenone-based initiator, the compound described in JP-A-2009-191179, in which the absorption maximum wavelength is matched with a wavelength light source such as 365 nm or 405 nm, can also be used.
Examples of the acylphosphine-based initiator include 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide. Further, commercially available products such as IRGACURE-819 and IRGACURE-TPO (trade names: both manufactured by BASF) can be used.
Examples of the metallocene compound include IRGACURE-784 (manufactured by BASF).

市販品ではＩＲＧＡＣＵＲＥ ＯＸＥ ０１、ＩＲＧＡＣＵＲＥ ＯＸＥ０２、ＩＲＧＡＣＵＲＥ ＯＸＥ ０３、ＩＲＧＡＣＵＲＥ ＯＸＥ ０４（以上、ＢＡＳＦ社製）、アデカオプトマーＮ－１９１９（（株）ＡＤＥＫＡ製、特開２０１２－１４０５２号公報に記載の光ラジカル重合開始剤２）も好適に用いられる。また、ＴＲ－ＰＢＧ－３０４（常州強力電子新材料有限公司製）、アデカアークルズＮＣＩ－８３１およびアデカアークルズＮＣＩ－９３０（（株）ＡＤＥＫＡ製）も用いることができる。また、ＤＦＩ－０９１（ダイトーケミックス株式会社製）を用いることができる。
さらに、また、フッ素原子を有するオキシム化合物を用いることも可能である。そのようなオキシム化合物の具体例としては、特開２０１０－２６２０２８号公報に記載されている化合物、特表２０１４－５００８５２号公報の段落０３４５に記載されている化合物２４、３６～４０、特開２０１３－１６４４７１号公報の段落０１０１に記載されている化合物（Ｃ－３）などが挙げられる。
最も好ましいオキシム化合物としては、特開２００７－２６９７７９号公報に示される特定置換基を有するオキシム化合物や、特開２００９－１９１０６１号公報に示されるチオアリール基を有するオキシム化合物などが挙げられる。The photoradical polymerization initiator is more preferably an oxime compound. By using the oxime compound, it becomes possible to improve the exposure latitude more effectively. The oxime compound is particularly preferable because it has a wide exposure latitude (exposure margin) and also acts as a photocuring accelerator.
As specific examples of the oxime compound, the compound described in JP-A-2001-233842, the compound described in JP-A-2000-80068, and the compound described in JP-A-2006-342166 can be used.
Preferred oxime compounds include, for example, compounds having the following structures, 3-benzooxyiminobutane-2-one, 3-acetoxyiminobutane-2-one, 3-propionyloxyiminobutane-2-one, and 2-acetoxy. Iminopentane-3-one, 2-acetoxyimimino-1-phenylpropane-1-one, 2-benzoyloxyimino-1-phenylpropane-1-one, 3- (4-toluenesulfonyloxy) iminobutane-2-one , And 2-ethoxycarbonyloxyimino-1-phenylpropane-1-one and the like. In the photosensitive resin composition of the present invention, it is particularly preferable to use an oxime compound (oxime-based photopolymerization initiator) as the photoradical polymerization initiator. The oxime-based photopolymerization initiator has a> C = N—O—C (= O) − linking group in the molecule.

Commercially available products include IRGACURE OXE 01, IRGACURE OXE02, IRGACURE OXE 03, IRGACURE OXE 04 (above, manufactured by BASF), ADEKA PTOMER N-1919 (manufactured by ADEKA Corporation, JP-A-2012-14052). The polymerization initiator 2) is also preferably used. Further, TR-PBG-304 (manufactured by Changzhou Powerful Electronics New Materials Co., Ltd.), ADEKA Arklus NCI-831 and ADEKA Arklus NCI-930 (manufactured by ADEKA Corporation) can also be used. Further, DFI-091 (manufactured by Daito Chemix Co., Ltd.) can be used.
Furthermore, it is also possible to use an oxime compound having a fluorine atom. Specific examples of such an oxime compound include the compounds described in JP-A-2010-262028, the compounds 24, 36-40 described in paragraph 0345 of JP-A-2014-500852, and JP-A-2013. Examples thereof include the compound (C-3) described in paragraph 0101 of JP-A-164471.
The most preferable oxime compound includes an oxime compound having a specific substituent shown in JP-A-2007-269779, an oxime compound having a thioaryl group shown in JP-A-2009-191061, and the like.

式（Ｉ）中、Ｒ^Ｉ００は、炭素数１～２０のアルキル基、１個以上の酸素原子によって中断された炭素数２～２０のアルキル基、炭素数１～１２のアルコキシル基、フェニル基、炭素数１～２０のアルキル基、炭素数１～１２のアルコキシル基、ハロゲン原子、シクロペンチル基、シクロヘキシル基、炭素数２～１２のアルケニル基、１個以上の酸素原子によって中断された炭素数２～１８のアルキル基および炭素数１～４のアルキル基の少なくとも１つで置換されたフェニル基、またはビフェニルであり、Ｒ^Ｉ０１は、式（ＩＩ）で表される基であるか、Ｒ^Ｉ００と同じ基であり、Ｒ^Ｉ０２～Ｒ^Ｉ０４は各々独立に炭素数１～１２のアルキル、炭素数１～１２のアルコキシまたはハロゲンである。

式中、Ｒ^Ｉ０５～Ｒ^Ｉ０７は、上記式（Ｉ）のＲ^Ｉ０２～Ｒ^Ｉ０４と同じである。From the viewpoint of exposure sensitivity, the photoradical polymerization initiator is a trihalomethyltriazine compound, a benzyldimethylketal compound, an α-hydroxyketone compound, an α-aminoketone compound, an acylphosphine compound, a phosphine oxide compound, a metallocene compound, an oxime compound, or a triaryl. Selected from the group consisting of imidazole dimer, onium salt compound, benzothiazole compound, benzophenone compound, acetophenone compound and its derivative, cyclopentadiene-benzene-iron complex and its salt, halomethyloxadiazole compound, 3-aryl substituted coumarin compound. Compounds are preferred.
Further preferable photoradical polymerization initiators are trihalomethyltriazine compounds, α-aminoketone compounds, acylphosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, triarylimidazole dimers, onium salt compounds, benzophenone compounds and acetophenone compounds. At least one compound selected from the group consisting of trihalomethyltriazine compounds, α-aminoketone compounds, oxime compounds, triarylimidazole dimers, and benzophenone compounds is more preferable, and metallocene compounds or oxime compounds are even more preferable, and oxime compounds are even more preferable. Is even more preferable.
The photoradical polymerization initiator is N, N'-tetraalkyl-4,4'-diaminobenzophenone, 2-benzyl such as benzophenone, N, N'-tetramethyl-4,4'-diaminobenzophenone (Michler ketone). -2-Dimethylamino-1- (4-morpholinophenyl) -butanone-1,2-methyl-1- [4- (methylthio) phenyl] -2-aromatic ketones such as morpholino-propanone-1, alkylanthraquinone, etc. It is also possible to use quinones fused to the aromatic ring of the above, benzoin ether compounds such as benzoin alkyl ether, benzoin compounds such as benzoin and alkyl benzoin, and benzyl derivatives such as benzyl dimethyl ketal. Further, a compound represented by the following formula (I) can also be used.

In formula (I), R ^I00 is an alkyl group having 1 to 20 carbon atoms, an alkyl group having 2 to 20 carbon atoms interrupted by one or more oxygen atoms, an alkoxyl group having 1 to 12 carbon atoms, a phenyl group, and the like. An alkyl group having 1 to 20 carbon atoms, an alkoxyl group having 1 to 12 carbon atoms, a halogen atom, a cyclopentyl group, a cyclohexyl group, an alkenyl group having 2 to 12 carbon atoms, and 2 to 2 carbon atoms interrupted by one or more oxygen atoms. It is a phenyl group or biphenyl substituted with at least one of 18 alkyl groups and 1 to 4 carbon atoms, and R ^I01 is a group represented by the formula (II) or the same as R ^{I 00} . It is a group, and R ^I02 to ^{RI 04} are independently alkyl having 1 to 12 carbon atoms and alkoxy or halogen having 1 to 12 carbon atoms, respectively.

In the formula, R ^I05 to R ^I07 are the same as R I ⁰² to R I ⁰⁴ of the above formula (I).

Further, as the photoradical polymerization initiator, the compounds described in paragraphs 0048 to 0055 of International Publication No. 2015/125469 can also be used.

When the photopolymerization initiator is contained, the content thereof is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, based on the total solid content of the photosensitive resin composition of the present invention. It is more preferably 0.5 to 15% by mass, and even more preferably 1.0 to 10% by mass. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more kinds of photopolymerization initiators are contained, the total thereof is preferably in the above range.

<< Photo-curing accelerator >>
The photosensitive resin composition used in the present invention may contain a photocuring accelerator. The photocuring accelerator in the present invention is preferably one that generates a base by exposure (photobase generator), and although it does not show activity under normal conditions of normal temperature and pressure, electromagnetic wave irradiation and heating are used as external stimuli. When done, those that generate a base (basic substance) are particularly preferred. Since the base generated by exposure acts as a catalyst for curing the polymer precursor by heating, it can be suitably used.
In the present invention, known photocuring accelerators can be used. The base component was neutralized by forming a salt, for example, those having a structure such as a transition metal compound complex or an ammonium salt, or those in which the amidin moiety was latent by forming a salt with a carboxylic acid. Examples thereof include ionic compounds, carbamate derivatives, oxime ester derivatives, and non-ionic compounds in which a base component is latent by a urethane bond or an oxime bond such as an acyl compound.

Examples of the photocuring accelerator according to the present invention include a photocuring accelerator having a cinnamon acid amide structure as disclosed in JP-A-2009-80452 and International Publication No. 2009/123122, JP-A-2006-. A photocuring accelerator having a carbamate structure as disclosed in JP-A-189591 and JP-A-2008-247747, and an oxime structure as disclosed in JP-A-2007-249013 and JP-A-2008-003581. Examples thereof include, but are not limited to, a photocuring accelerator having a carbamoyloxime structure, and other known photocuring accelerator structures can be used.

In addition, examples of the photocuring accelerator include the compounds described in paragraphs 0185 to 0188, 0199 to 0200 and 0202 of JP2012-93746, and the compounds described in paragraphs 0022 to 0069 of JP2013-194205. Examples thereof include the compounds described in paragraphs 0026 to 0074 of Japanese Patent Application Laid-Open No. 2013-204319, and the compounds described in paragraph 0052 of International Publication No. 2010/064631.

Commercially available products of the photo-curing accelerator include WPBG-266, WPBG-300, WPBG-345, WPGB-140, WPBG-165, WPBG-207, PBG-018, WPGB-015, WPBG-041, WPGB-172, WPGB-174, WPBG-166, WPGB-158, WPGB-025, WPGB-168, WPGB-167 and WPBG-082 (manufactured by Wako Pure Chemical Industries, Ltd.) can also be used.

When a photocuring accelerator is used, the content of the photocuring accelerator in the composition is preferably 0.1 to 50% by mass with respect to the total solid content of the composition. The lower limit is more preferably 0.5% by mass or more, further preferably 1% by mass or more. The upper limit is more preferably 30% by mass or less, further preferably 20% by mass or less.
As the photocuring accelerator, one kind or two or more kinds can be used. When two or more types are used, the total amount is preferably in the above range.

<< Sensitive Dye >>
The photosensitive resin composition of the present invention may contain a sensitizing dye. The sensitizing dye absorbs a specific active radiation and becomes an electronically excited state. The sensitizing dye in the electronically excited state comes into contact with a thermal curing accelerator, a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and acts such as electron transfer, energy transfer, and heat generation occur. As a result, the thermal curing accelerator, the thermal radical polymerization initiator, and the photoradical polymerization initiator undergo a chemical change and decompose. For details of the sensitizing dye, the description in paragraphs 0161 to 0163 of JP-A-2016-027355 can be referred to, and the content thereof is incorporated in the present specification.

When the photosensitive resin composition of the present invention contains a sensitizing dye, the content of the sensitizing dye may be 0.01 to 20% by mass with respect to the total solid content of the photosensitive resin composition of the present invention. It is preferably 0.1 to 15% by mass, more preferably 0.5 to 10% by mass. The sensitizing dye may be used alone or in combination of two or more.

<Thermal radical polymerization initiator>
The photosensitive resin composition of the present invention may contain a thermal radical polymerization initiator as long as it does not deviate from the gist of the present invention.
The thermal radical polymerization initiator is a compound that generates radicals by heat energy to initiate or accelerate the polymerization reaction of a polymerizable compound. By adding the thermal radical polymerization initiator, it is possible to proceed with the polymerization reaction of the polymer precursor as well as the cyclization of the polymer precursor, so that higher heat resistance can be achieved.
Specific examples of the thermal radical polymerization initiator include the compounds described in paragraphs 0074 to 0118 of JP-A-2008-6554.

When the thermal radical polymerization initiator is contained, the content thereof is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, based on the total solid content of the photosensitive resin composition of the present invention. %, More preferably 5 to 15% by mass. Only one type of thermal radical polymerization initiator may be contained, or two or more types may be contained. When two or more kinds of thermal radical polymerization initiators are contained, the total thereof is preferably in the above range.

<Polymerizable compound>
<< Radical Polymerizable Compound >>
The photosensitive resin composition of the present invention preferably contains a radically polymerizable compound.
As the radically polymerizable compound, a compound having a radically polymerizable group can be used. Examples of the radically polymerizable group include groups having an ethylenically unsaturated bond such as a vinylphenyl group, a vinyl group, a (meth) acryloyl group and an allyl group. The radically polymerizable group is preferably a (meth) acryloyl group.

The number of radically polymerizable groups contained in the radically polymerizable compound may be one or two or more, but the radically polymerizable compound preferably has two or more radically polymerizable groups and preferably three or more radically polymerizable groups. More preferred. The upper limit is preferably 15 or less, more preferably 10 or less, and even more preferably 8 or less.

The molecular weight of the radically polymerizable compound is preferably 2000 or less, more preferably 1500 or less, still more preferably 900 or less. The lower limit of the molecular weight of the radically polymerizable compound is preferably 100 or more.

From the viewpoint of developability, the photosensitive resin composition of the present invention preferably contains at least one bifunctional or higher functional radical polymerizable compound containing two or more polymerizable groups, and the trifunctional or higher functional radical polymerizable compound. It is more preferable to contain at least one kind. Further, it may be a mixture of a bifunctional radically polymerizable compound and a trifunctional or higher functional radically polymerizable compound. The number of functional groups of the radically polymerizable compound means the number of radically polymerizable groups in one molecule.

Specific examples of the radically polymerizable compound include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, and maleic acid), esters thereof, and amides. , Preferably esters of unsaturated carboxylic acid and polyhydric alcohol compound, and amides of unsaturated carboxylic acid and polyvalent amine compound. Further, an addition reaction product of an unsaturated carboxylic acid ester or amide having a nucleophilic substituent such as a hydroxyl group, an amino group or a mercapto group with a monofunctional or polyfunctional isocyanate or an epoxy, or a monofunctional or polyfunctional group. A dehydration condensation reaction product with a functional carboxylic acid is also preferably used. Further, an addition reaction product of an unsaturated carboxylic acid ester or amide having a polyelectron substituent such as an isocyanate group or an epoxy group with monofunctional or polyfunctional alcohols, amines and thiols, and a halogen group. Substitution reaction products of unsaturated carboxylic acid esters or amides having a desorbing substituent such as or tosyloxy group with monofunctional or polyfunctional alcohols, amines and thiols are also suitable. Further, as another example, it is also possible to use a compound group in which the unsaturated carboxylic acid is replaced with a vinylbenzene derivative such as unsaturated phosphonic acid or styrene, vinyl ether, allyl ether or the like. As a specific example, the description in paragraphs 0113 to 0122 of JP-A-2016-0273557 can be referred to, and these contents are incorporated in the present specification.

Further, as the radically polymerizable compound, a compound having a boiling point of 100 ° C. or higher under normal pressure is also preferable. Examples are polyethylene glycol di (meth) acrylate, trimethyl ethanetri (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol. Penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexanediol (meth) acrylate, trimethylolpropanetri (acryloyloxypropyl) ether, tri (acryloyloxyethyl) isocyanurate, glycerin, trimethylolethane, etc. A compound obtained by adding ethylene oxide or propylene oxide to a functional alcohol and then (meth) acrylated, is described in Japanese Patent Publication No. 48-41708, Japanese Patent Publication No. 50-6034, and Japanese Patent Application Laid-Open No. 51-37193. Urethane (meth) acrylates such as those described in JP-A-48-64183, JP-A-49-43191, and JP-B-52-30490, polyester acrylates, epoxy resins and (meth) acrylics. Examples thereof include polyfunctional acrylates and methacrylates such as epoxy acrylates which are reaction products with acids, and mixtures thereof. Further, the compounds described in paragraphs 0254 to 0257 of JP-A-2008-292970 are also suitable. Further, a polyfunctional (meth) acrylate obtained by reacting a polyfunctional carboxylic acid with a cyclic ether group such as glycidyl (meth) acrylate and a compound having an ethylenically unsaturated bond can also be mentioned.
Further, as preferred radically polymerizable compounds other than the above, those described in JP-A-2010-160418, JP-A-2010-129825, Patent No. 4364216 and the like have a fluorene ring and have an ethylenically unsaturated bond. It is also possible to use a compound having two or more groups having the above, or a cardo resin.
Further, as other examples, the specific unsaturated compound described in Japanese Patent Publication No. 46-43946, Japanese Patent Publication No. 1-4039, Japanese Patent Publication No. 1-4536, and Japanese Patent Application Laid-Open No. 2-25493. Vinyl phosphonic acid compounds and the like can also be mentioned. Further, a compound containing a perfluoroalkyl group described in JP-A-61-22048 can also be used. Furthermore, the journal of the Japan Adhesive Association vol. 20, No. Those introduced as photopolymerizable monomers and oligomers on pages 7, 300-308 (1984) can also be used.

In addition to the above, the compounds described in paragraphs 0048 to 0051 of JP-A-2015-034964 can also be preferably used, and their contents are incorporated in the present specification.

Further, the compound described in JP-A No. 10-62986 together with specific examples as the formulas (1) and (2) after addition of ethylene oxide or propylene oxide to the polyfunctional alcohol is also (meth) acrylated. It can be used as a radically polymerizable compound.

Further, the compounds described in paragraphs 0104 to 0131 of JP-A-2015-187211 can also be used as other radically polymerizable compounds, and their contents are incorporated in the present specification.

Examples of the radically polymerizable compound include dipentaerythritol triacrylate (commercially available KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.) and dipentaerythritol tetraacrylate (commercially available KAYARAD D-320; Nippon Kayaku). A-TMMT Co., Ltd .: Shin-Nakamura Chemical Industry Co., Ltd.), Dipentaerythritol penta (meth) acrylate (commercially available KAYARAD D-310; Nippon Kayaku Co., Ltd.), Dipentaerythritol hexa (meth) Acrylate (KAYARAD DPHA as a commercial product; manufactured by Nippon Kayaku Co., Ltd., A-DPH; manufactured by Shin-Nakamura Chemical Industry Co., Ltd.), and these (meth) acryloyl groups via an ethylene glycol residue or a propylene glycol residue. Bonded structures are preferred. These oligomer types can also be used.

Commercially available products of the radically polymerizable compound include, for example, SR-494, which is a tetrafunctional acrylate having four ethyleneoxy chains manufactured by Sartmer, and SR-209, which is a bifunctional methacrylate having four ethyleneoxy chains. , 231, 239, DPCA-60, a hexafunctional acrylate having 6 pentyleneoxy chains manufactured by Nippon Kayaku Co., Ltd., TPA-330, a trifunctional acrylate having 3 isobutyleneoxy chains, urethane oligomer UAS- 10, UAB-140 (manufactured by Nippon Paper Co., Ltd.), NK ester M-40G, NK ester 4G, NK ester M-9300, NK ester A-9300, UA-7200 (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.), DPHA-40H ( Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), Blemmer PME400 (manufactured by Nichiyu Co., Ltd.), etc. Can be mentioned.

Examples of the radically polymerizable compound include urethane acrylates as described in JP-A-48-41708, JP-A-51-37193, JP-B-2-32293, and JP-B-2-16765. , Urethane compounds having an ethylene oxide-based skeleton described in JP-A-58-49860, JP-B-56--17654, JP-B-62-39417, and JP-B-62-39418 are also suitable. Further, as the radically polymerizable compound, compounds having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-1-105238 are used. It can also be used.

In the photosensitive resin composition of the present invention, a monofunctional radically polymerizable compound can be preferably used as the radically polymerizable compound from the viewpoint of suppressing warpage associated with controlling the elastic modulus of the cured film. Examples of the monofunctional radically polymerizable compound include n-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, butoxyethyl (meth) acrylate, carbitol (meth) acrylate, and cyclohexyl (meth). (Meta) acrylate, benzyl (meth) acrylate, phenoxyethyl (meth) acrylate, N-methylol (meth) acrylamide, glycidyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate and the like (meth). ) N-vinyl compounds such as acrylic acid derivatives, N-vinylpyrrolidone and N-vinylcaprolactam, and allyl compounds such as allylglycidyl ether, diallyl phthalate and triallyl trimellitate are preferably used. As the monofunctional radically polymerizable compound, a compound having a boiling point of 100 ° C. or higher under normal pressure is also preferable in order to suppress volatilization before exposure.

<< Polymerizable compounds other than the radically polymerizable compounds mentioned above >>
The photosensitive resin composition of the present invention may further contain a polymerizable compound other than the radically polymerizable compound described above. Examples of the polymerizable compound other than the above-mentioned radically polymerizable compound include a compound having a hydroxymethyl group, an alkoxymethyl group or an acyloxymethyl group; an epoxy compound; an oxetane compound; and a benzoxazine compound.

(Compound having hydroxymethyl group, alkoxymethyl group or acyloxymethyl group)
As the compound having a hydroxymethyl group, an alkoxymethyl group or an acyloxymethyl group, a compound represented by the following formula (AM1), (AM4) or (AM5) is preferable.

（式中、ｔは、１～２０の整数を示し、Ｒ^１０４は炭素数１～２００のｔ価の有機基を示し、Ｒ^１０５は、－ＯＲ^１０６または、－ＯＣＯ－Ｒ^１０７で示される基を示し、Ｒ^１０６は、水素原子または炭素数１～１０の有機基を示し、Ｒ^１０７は、炭素数１～１０の有機基を示す。）

(In the formula, t represents an integer of 1 to 20, R ¹⁰⁴ represents an organic group having a t-valence of 1 to 200 carbon atoms, and R ¹⁰⁵ is a group represented by -OR ¹⁰⁶ or -OCO-R ¹⁰⁷ . , R ¹⁰⁶ indicates a hydrogen atom or an organic group having 1 to 10 carbon atoms, and R ¹⁰⁷ indicates an organic group having 1 to 10 carbon atoms.)

（式中、Ｒ^４０４は炭素数１～２００の２価の有機基を示し、Ｒ^４０５は、－ＯＲ^４０６または、－ＯＣＯ－Ｒ^４０７で示される基を示し、Ｒ^４０６は、水素原子または炭素数１～１０の有機基を示し、Ｒ^４０７は、炭素数１～１０の有機基を示す。）

(In the formula, R ⁴⁰⁴ represents a divalent organic group having 1 to 200 carbon atoms, R ⁴⁰⁵ represents a group represented by -OR ⁴⁰⁶ or -OCO-R ⁴⁰⁷ , and R ⁴⁰⁶ is a hydrogen atom or carbon. An organic group having a number of 1 to 10 is shown, and R ⁴⁰⁷ is an organic group having a carbon number of 1 to 10).

（式中ｕは３～８の整数を示し、Ｒ^５０４は炭素数１～２００のｕ価の有機基を示し、Ｒ^５０５は、－ＯＲ^５０６または、－ＯＣＯ－Ｒ^５０７で示される基を示し、Ｒ^５０６は、水素原子または炭素数１～１０の有機基を示し、Ｒ^５０７は、炭素数１～１０の有機基を示す。）

(In the formula, u indicates an integer of 3 to 8, R ⁵⁰⁴ indicates an organic group having a u valence of 1 to 200 carbon atoms, and R ⁵⁰⁵ indicates a group represented by -OR ⁵⁰⁶ or -OCO-R ⁵⁰⁷ . , R ⁵⁰⁶ represents a hydrogen atom or an organic group having 1 to 10 carbon atoms, and R ⁵⁰⁷ indicates an organic group having 1 to 10 carbon atoms.)

Specific examples of the compound represented by the formula (AM4) include 46DMOC, 46DMOEP (trade name, manufactured by Asahi Organic Materials Industry Co., Ltd.), DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML. -PC, DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylolBisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC (trade name, manufactured by Honshu Chemical Industry Co., Ltd.), NIKARAC MX-290 (trade name, manufactured by Sanwa Chemical Co., Ltd.), 2,6-dimethoxymethyl-4-t-butylphenol, 2,6-dimethoxymethyl-p- Cresol, 2,6-diacetoxymethyl-p-cresol (2,6-dimethoxymethyl-p-cresol, 2,6-diacetoxymethyl-p-cresol) and the like can be mentioned.

Specific examples of the compound represented by the formula (AM5) include TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPA, TMOM-BP, HML-TPPHBA, and the like. HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.), TM-BIP-A (trade name, manufactured by Asahi Organic Material Industry Co., Ltd.), NIKALAC MX-280, Examples thereof include NIKALAC MX-270 and NIKALAC MW-100LM (above, trade name, manufactured by Sanwa Chemical Co., Ltd.).

(Epoxy compound (compound having an epoxy group))
The epoxy compound is preferably a compound having two or more epoxy groups in one molecule. The epoxy group undergoes a cross-linking reaction at 200 ° C. or lower, and the dehydration reaction derived from the cross-linking does not occur, so that film shrinkage is unlikely to occur. Therefore, the inclusion of the epoxy compound is effective in suppressing low temperature curing and warpage of the composition.

The epoxy compound preferably contains a polyethylene oxide group. As a result, the elastic modulus can be further reduced and warpage can be suppressed. The polyethylene oxide group means that the number of constituent units of ethylene oxide is 2 or more, and the number of constituent units is preferably 2 to 15.

Examples of epoxy compounds include bisphenol A type epoxy resin; bisphenol F type epoxy resin; alkylene glycol type epoxy resin such as propylene glycol diglycidyl ether; polyalkylene glycol type epoxy resin such as polypropylene glycol diglycidyl ether; polymethyl (glycidi). Examples include, but are not limited to, epoxy group-containing silicones such as loxypropyl) siloxane. Specifically, Epicron® 850-S, Epicron® HP-4032, Epicron® HP-7200, Epicron® HP-820, Epicron® HP-4700, Epicron® EXA-4710, Epicron® HP-4770, Epicron® EXA-859CRP, Epicron® EXA-1514, Epicron® EXA-4880, Epicron® EXA-4850-150, Epicron EXA-4850-1000, Epicron (registered trademark) EXA-4816, Epicron (registered trademark) EXA-4822 (trademark, manufactured by Dainippon Ink and Chemicals Co., Ltd.), Rica Resin (registered trademark) ) BEO-60E (trade name, Shin Nihon Rika Co., Ltd.), EP-4003S, EP-4000S (trade name, manufactured by ADEKA Co., Ltd.) and the like. Among these, an epoxy resin containing a polyethylene oxide group is preferable because it is excellent in suppressing warpage and heat resistance. For example, Epicron® EXA-4880, Epicron® EXA-4822, and Ricaresin® BEO-60E are preferred because they contain a polyethylene oxide group.

(Oxetane compound (compound having an oxetanyl group))
Examples of the oxetane compound include compounds having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethyloxetane, 1,4-bis {[(3-ethyl-3-oxetanyl) methoxy] methyl} benzene, and the like. Examples thereof include 3-ethyl-3- (2-ethylhexylmethyl) oxetane, 1,4-benzenedicarboxylic acid-bis [(3-ethyl-3-oxetanyl) methyl] ester, and the like. As a specific example, the Aron Oxetane series manufactured by Toagosei Co., Ltd. (for example, OXT-121, OXT-221, OXT-191, OXT-223) can be preferably used, and these can be used alone or individually. Two or more kinds may be mixed.

(Benzoxazine compound (compound having a benzoxazolyl group))
Since the benzoxazine compound is a cross-linking reaction derived from the cycloaddition reaction, degassing does not occur at the time of curing, and heat shrinkage is further reduced to suppress the occurrence of warpage, which is preferable.

Preferred examples of the benzoxazine compound include B-a type benzoxazine, Bm type benzoxazine (hereinafter, trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd.), benzoxazine adduct of polyhydroxystyrene resin, and phenol novolac type dihydrobenzo. Examples include oxazine compounds. These may be used alone or in combination of two or more.

When the polymerizable compound is contained, the content thereof is preferably more than 0% by mass and 60% by mass or less with respect to the total solid content of the photosensitive resin composition of the present invention. The lower limit is more preferably 5% by mass or more. The upper limit is more preferably 50% by mass or less, and further preferably 30% by mass or less.
One type of the polymerizable compound may be used alone, or two or more types may be mixed and used. When two or more types are used in combination, the total amount is preferably within the above range.

<Migration inhibitor>
The photosensitive resin composition of the present invention preferably further contains a migration inhibitor. By including the migration inhibitor, it is possible to effectively suppress the movement of metal ions derived from the metal layer (metal wiring) into the photosensitive resin composition layer.
The migration inhibitor is not particularly limited, but a heterocyclic ring (pyran ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, etc. Pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring and 6H-pyran ring, triazine ring), thiourea and mercapto group compounds, hindered phenolic compounds , Salicylic acid derivative compound, hydrazide derivative compound and the like. In particular, triazole-based compounds such as 1,2,4-triazole and benzotriazole, and tetrazole-based compounds such as 1H-tetrazole and 5-phenyltetrazole can be preferably used.

It is also possible to use an ion trap agent that captures anions such as halogen ions.

Examples of other migration inhibitors include rust preventives described in paragraph 0094 of JP2013-15701, compounds described in paragraphs 0073 to 0076 of JP2009-283711, and JP-A-2011-59656. The compounds described in paragraph 0052, the compounds described in paragraphs 0114, 0116 and 0118 of JP2012-194520 can be used.

Specific examples of the migration inhibitor include the following compounds.

When the photosensitive resin composition has a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0% by mass with respect to the total solid content of the photosensitive resin composition, and is 0. It is more preferably 0.05 to 2.0% by mass, and even more preferably 0.1 to 1.0% by mass.
The migration inhibitor may be only one kind or two or more kinds. When there are two or more types of migration inhibitors, the total is preferably in the above range.

本発明の感光性樹脂組成物が重合禁止剤を有する場合、重合禁止剤の含有量は、本発明の感光性樹脂組成物の全固形分に対して、０．０１～５質量％であることが好ましく、０．０２～３質量％であることがより好ましく、０．０５～２．５質量％であることがさらに好ましい。
重合禁止剤は１種のみでもよいし、２種以上であってもよい。重合禁止剤が２種以上の場合は、その合計が上記範囲であることが好ましい。<Polymerization inhibitor>
The photosensitive resin composition of the present invention preferably contains a polymerization inhibitor.
Examples of the polymerization inhibitor include hydroquinone, 4-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, p-tert-butylcatechol, 1,4-benzoquinone, diphenyl-p-benzoquinone, 4,4'. -Thiobis (3-methyl-6-tert-butylphenol), 2,2'-methylenebis (4-methyl-6-tert-butylphenol), N-nitroso-N-phenylhydroxyamine aluminum salt, phenothiazine, N-nitrosodiphenylamine , N-Phenylnaphthylamine, ethylenediamine tetraacetic acid, 1,2-cyclohexanediamine tetraacetic acid, glycol etherdiamine tetraacetic acid, 2,6-di-tert-butyl-4-methylphenol, 5-nitroso-8-hydroxyquinoline, 1 -Nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5- (N-ethyl-N-sulfopropylamino) phenol, N-nitroso-N- (1-naphthyl) hydroxyamine ammonium salt, Bis (4-hydroxy-3,5-tert-butyl) phenylmethane and the like are preferably used. Further, the polymerization inhibitor described in paragraph 0060 of JP-A-2015-127817 and the compound described in paragraphs 0031 to 0046 of International Publication No. 2015/125469 can also be used.
In addition, the following compounds can be used (Me is a methyl group).

When the photosensitive resin composition of the present invention has a polymerization inhibitor, the content of the polymerization inhibitor shall be 0.01 to 5% by mass with respect to the total solid content of the photosensitive resin composition of the present invention. Is more preferable, 0.02 to 3% by mass is more preferable, and 0.05 to 2.5% by mass is further preferable.
The polymerization inhibitor may be only one kind or two or more kinds. When there are two or more types of polymerization inhibitors, the total is preferably in the above range.

<Metal adhesion improver>
The photosensitive resin composition of the present invention preferably contains a metal adhesiveness improving agent for improving the adhesiveness with a metal material used for electrodes, wiring and the like. Examples of the metal adhesiveness improving agent include a silane coupling agent.

Examples of the silane coupling agent include the compounds described in paragraphs 0062 to 0073 of JP-A-2014-191002, the compounds described in paragraphs 0063-0071 of International Publication No. 2011/080992, JP-A-2014-191252. The compounds described in paragraphs 0060 to 0061 of the above, the compounds described in paragraphs 0045 to 0052 of JP-A-2014-41264, and the compounds described in paragraph 0055 of International Publication No. 2014/097594 can be mentioned. Further, it is also preferable to use two or more different silane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. Further, it is also preferable to use the following compounds as the silane coupling agent. In the following formula, Et represents an ethyl group.

Further, as the metal adhesiveness improving agent, the compounds described in paragraphs 0046 to 0049 of JP2014-186186A and the sulfide compounds described in paragraphs 0032 to 0043 of JP2013-072935 can also be used.

The content of the metal adhesion improver is preferably 0.1 to 30 parts by mass, more preferably 0.5 to 15 parts by mass, and further preferably 0 with respect to 100 parts by mass of the polymer precursor. It is in the range of .5 to 5 parts by mass. When it is at least the above lower limit value, the adhesiveness between the cured film and the metal layer after the curing step is good, and when it is at least the above upper limit value, the heat resistance and mechanical properties of the cured film after the curing step are good. The metal adhesiveness improving agent may be only one kind or two or more kinds. When two or more types are used, it is preferable that the total is in the above range.

<Other additives>
The photosensitive resin composition of the present invention contains various additives such as chain transfer agents, surfactants, higher fatty acid derivatives, inorganic particles, and curing agents, if necessary, as long as the effects of the present invention are not impaired. A curing catalyst, a filler, an antioxidant, an ultraviolet absorber, an antioxidant and the like can be added. When these additives are added, the total addition amount is preferably 3% by mass or less of the solid content of the composition.

<< Chain Transfer Agent >>
The photosensitive resin composition of the present invention may contain a chain transfer agent. Chain transfer agents are defined, for example, in the Polymer Dictionary, Third Edition (edited by the Society of Polymer Science, 2005), pp. 683-684. As the chain transfer agent, for example, a group of compounds having SH, PH, SiH, and GeH in the molecule is used. They can donate hydrogen to low-activity radicals to generate radicals, or they can be oxidized and then deprotonated to generate radicals. In particular, thiol compounds (for example, 2-mercaptobenzimidazoles, 2-mercaptobenzthiazoles, 2-mercaptobenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetrazole, etc.) can be preferably used.

When the photosensitive resin composition of the present invention has a chain transfer agent, the content of the chain transfer agent may be 0.01 to 20% by mass with respect to the total solid content of the photosensitive resin composition of the present invention. It is preferably 1 to 10% by mass, more preferably 1 to 5% by mass, and even more preferably 1 to 5% by mass. The chain transfer agent may be only one kind or two or more kinds. When there are two or more types of chain transfer agents, the total is preferably in the above range.

<< Surfactant >>
Each kind of surfactant may be added to the photosensitive resin composition of the present invention from the viewpoint of further improving the coatability. As the surfactant, various types of surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant can be used. The following surfactants are also preferable.

When the photosensitive resin composition of the present invention has a surfactant, the content of the surfactant is 0.001 to 2.0% by mass with respect to the total solid content of the photosensitive resin composition of the present invention. It is preferably 0.005 to 1.0% by mass, more preferably 0.005 to 1.0% by mass. The surfactant may be only one kind or two or more kinds. When there are two or more types of surfactant, the total is preferably in the above range.

<< Higher fatty acid derivative >>
In the photosensitive resin composition of the present invention, in order to prevent polymerization inhibition due to oxygen, higher fatty acid derivatives such as behenic acid and behenic acid amide are added, and the surface of the composition is dried in the process of drying after application. It may be unevenly distributed in.
When the photosensitive resin composition of the present invention has a higher fatty acid derivative, the content of the higher fatty acid derivative is 0.1 to 10% by mass with respect to the total solid content of the photosensitive resin composition of the present invention. Is preferable. The higher fatty acid derivative may be only one kind or two or more kinds. When there are two or more higher fatty acid derivatives, the total is preferably in the above range.

<Restrictions on other contained substances>
The water content of the photosensitive resin composition of the present invention is preferably less than 5% by mass, more preferably less than 1% by mass, still more preferably less than 0.6% by mass, from the viewpoint of coating surface properties.

The metal content of the photosensitive resin composition of the present invention is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, still more preferably less than 0.5 mass ppm, from the viewpoint of insulating properties. Examples of the metal include sodium, potassium, magnesium, calcium, iron, chromium, nickel and the like. When a plurality of metals are contained, it is preferable that the total of these metals is in the above range.
Further, as a method for reducing metal impurities unintentionally contained in the photosensitive resin composition of the present invention, a raw material having a low metal content is selected as the raw material constituting the photosensitive resin composition of the present invention. Methods such as filtering the raw materials constituting the photosensitive resin composition of the present invention with a filter, lining the inside of the apparatus with polytetrafluoroethylene or the like, and performing distillation under conditions in which contamination is suppressed as much as possible are mentioned. be able to.

Considering the use as a semiconductor material, the photosensitive resin composition of the present invention preferably has a halogen atom content of less than 500 mass ppm, more preferably less than 300 mass ppm, and more preferably 200 mass by mass, from the viewpoint of wiring corrosiveness. Less than ppm is more preferred. Among them, those existing in the state of halogen ions are preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm. Examples of the halogen atom include a chlorine atom and a bromine atom. It is preferable that the total amount of chlorine atom and bromine atom, or chlorine ion and bromine ion is in the above range, respectively.

As a storage container for the photosensitive resin composition of the present invention, a conventionally known storage container can be used. In addition, as a storage container, a multi-layer bottle composed of 6 types and 6 layers of resin and a 7-layer structure of 6 types of resin are used for the inner wall of the container for the purpose of suppressing impurities from being mixed into raw materials and compositions. It is also preferable to use a bottle of plastic. Examples of such a container include the container described in Japanese Patent Application Laid-Open No. 2015-123351.

<Preparation of composition>
The photosensitive resin composition of the present invention can be prepared by mixing each of the above components. The mixing method is not particularly limited, and a conventionally known method can be used.
Further, it is preferable to perform filtration using a filter for the purpose of removing foreign substances such as dust and fine particles in the composition. The filter hole diameter is preferably 1 μm or less, more preferably 0.5 μm or less, still more preferably 0.1 μm or less. The filter material is preferably polytetrafluoroethylene, polyethylene or nylon. The filter may be one that has been pre-cleaned with an organic solvent. In the filter filtration step, a plurality of types of filters may be connected in series or in parallel for use. When using a plurality of types of filters, filters having different pore diameters or materials may be used in combination. In addition, various materials may be filtered a plurality of times. When filtering multiple times, circulation filtration may be used. Moreover, you may pressurize and perform filtration. When pressurizing and filtering, the pressurizing pressure is preferably 0.05 MPa or more and 0.3 MPa or less.
In addition to filtration using a filter, impurities may be removed using an adsorbent. Filter filtration and impurity removal treatment using an adsorbent may be combined. As the adsorbent, a known adsorbent can be used. Examples thereof include inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon.

In the present invention, the total content of acid groups and acid generating groups (amount of acid groups and the like [ΣAc]) contained in the polymer precursor and the photosensitive agent in the photosensitive resin composition is 0.5 mmol / g or less. .. The acid group in the present specification is a group having a pKa of 4 or less, and carboxylic acids and sulfonic acids are exemplified. The acid generating group in the present specification can generate an acid group in the liquid of the photosensitive resin composition or in the film obtained from the photosensitive resin composition by a process in which the photosensitive resin composition is used, such as heating and exposure. Examples thereof include a group in which the acid group is protected by weakness.
The amount of the acid group or the like in the photosensitive resin composition in the present invention is further preferably 0.4 mmol / g or less, more preferably 0.3 mmol / g or less, and 0.2 mmol / g or less. It is more preferable to have. As a lower limit value, it is practical that it is 0.01 mmol / g or more. In the present invention, since the amount of the acid groups and the like is kept low, good development with an organic solvent is possible regardless of the alkaline solution. In the above Patent Document 1, since the resin composition is alkali-soluble (for example, [0064]), it is estimated that the amount of acid groups and the like in the resin and the like exceeds 2.0 mmol / g.

<Cured film, laminate, semiconductor device, and manufacturing method thereof>
Next, a cured film, a laminate, a semiconductor device, and a method for manufacturing them will be described.
The cured film of the present invention is obtained by curing the photosensitive resin composition of the present invention. The film thickness of the cured film of the present invention can be, for example, 0.5 μm or more, and can be 1 μm or more. Further, the upper limit value can be 100 μm or less, and can be 30 μm or less.

Two or more layers of the cured film of the present invention may be laminated, and further, 3 to 7 layers may be laminated to form a laminated body. The laminate having two or more cured films of the present invention preferably has a metal layer between the cured films. Such a metal layer is preferably used as a metal wiring such as a rewiring layer.

The cured film in the present invention can also be used for manufacturing a plate surface such as an offset plate surface or a screen plate surface, using it for etching molded parts, and manufacturing a protective lacquer and a dielectric layer in electronics, particularly microelectronics.

The method for producing a cured film of the present invention includes using the photosensitive resin composition of the present invention. Specifically, a film forming step of applying the photosensitive resin composition of the present invention to a substrate to form a film (layer forming step of forming a layer) and a layered photosensitive resin composition at 80 to 450 ° C. ( It includes a heating step of heating at preferably 80 to 350 ° C.). Preferably, the method for producing the cured film is, after the film forming step (layer forming step), an exposure step for exposing the film and the exposed photosensitive resin composition layer (film, that is, a resin layer). On the other hand, a manufacturing method including a developing process for developing can be mentioned. After this development, the exposed resin layer can be further cured by including a heating step of heating (preferably heating at 80 to 450 ° C.) (more preferably 80 to 350 ° C.). As described above, when the photosensitive resin composition is used, the composition is cured by exposure in advance, and then if necessary, desired processing (for example, the following lamination) is performed, and the composition is further cured by heating. be able to.

The method for producing a laminate of the present invention includes the method for producing a cured film of the present invention. In the method for producing a laminated body of the present invention, after forming a cured film according to the above-mentioned method for producing a cured film, the photosensitive resin composition is again subjected to a film forming step (layer forming step) and a heating step, or a photosensitive step. When properties are added, it is preferable to perform the film forming step (layer forming step), the exposure step, and the developing step (more heating step if necessary) in the above order. In particular, it is preferable to perform each of the above steps a plurality of times (two or more layers) or 3 to 7 times (that is, 3 to 7 layers) in order. By laminating the cured film in this way, a laminated body can be obtained. In the present invention, it is particularly preferable to provide a metal layer on the portion provided with the cured film, between the cured films, or both.
These details will be described below.

<< Membrane formation process (layer formation process) >>
The production method according to a preferred embodiment of the present invention includes a film forming step (layer forming step) in which the photosensitive resin composition is applied to a substrate to form a film (layered).
The type of substrate can be appropriately determined depending on the application, but it is a semiconductor manufacturing substrate such as silicon, silicon nitride, polysilicon, silicon oxide, amorphous silicon, quartz, glass, optical film, ceramic material, thin-film film, magnetic film. , Reflective film, metal substrate such as Ni, Cu, Cr, Fe, paper, SOG (Spin On Glass), TFT (thin film thin film) array substrate, electrode plate of plasma display panel (PDP), and the like are not particularly limited. In the present invention, a semiconductor-made substrate is particularly preferable, and a silicon substrate is more preferable.
When the photosensitive resin composition layer is formed on the surface of the resin layer or the surface of the metal layer, the resin layer or the metal layer serves as a substrate.
Coating is preferable as a means for applying the photosensitive resin composition to the substrate.
Specifically, the means to be applied include a dip coating method, an air knife coating method, a curtain coating method, a wire bar coating method, a gravure coating method, an extrusion coating method, a spray coating method, a spin coating method, and a slit coating method. And the inkjet method and the like are exemplified. From the viewpoint of the uniformity of the thickness of the photosensitive resin composition layer, a spin coating method, a slit coating method, a spray coating method, and an inkjet method are more preferable. A resin layer having a desired thickness can be obtained by adjusting an appropriate solid content concentration and coating conditions according to the method. Further, the coating method can be appropriately selected depending on the shape of the substrate. For a circular substrate such as a wafer, a spin coating method, a spray coating method, an inkjet method, etc. are preferable, and for a rectangular substrate, a slit coating method, a spray coating method, an inkjet method, etc. The method or the like is preferable. In the case of the spin coating method, for example, it can be applied at a rotation speed of 500 to 2000 rpm for about 10 seconds to 1 minute.

<< Drying process >>
The production method of the present invention may include a step of forming the photosensitive resin composition layer, a film forming step (layer forming step), and then drying to remove the solvent. The preferred drying temperature is 50 to 150 ° C, more preferably 70 ° C to 130 ° C, still more preferably 90 ° C to 110 ° C. The drying time is exemplified by 30 seconds to 20 minutes, preferably 1 minute to 10 minutes, more preferably 3 minutes to 7 minutes.

<< Exposure process >>
The production method of the present invention may include an exposure step of exposing the photosensitive resin composition layer. The exposure amount is not particularly determined as long as the photosensitive resin composition can be cured, but for example, it is preferable to irradiate 100 to 10000 mJ / cm ² in terms of exposure energy at a wavelength of 365 nm, and to irradiate 200 to 8000 mJ / cm ² . Is more preferable.
The exposure wavelength can be appropriately determined in the range of 190 to 1000 nm, preferably 240 to 550 nm.
The exposure wavelengths are as follows: (1) semiconductor laser (wavelength 830 nm, 532 nm, 488 nm, 405 nm etc.), (2) metal halide lamp, (3) high-pressure mercury lamp, g-ray (wavelength 436 nm), h. Line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, i-line), (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), F2 excimer Examples include a laser (wavelength 157 nm), (5) extreme ultraviolet rays; EUV (wavelength 13.6 nm), (6) electron beam and the like. For the photosensitive resin composition of the present invention, exposure with a high-pressure mercury lamp is particularly preferable, and exposure with an i-line is particularly preferable. As a result, particularly high exposure sensitivity can be obtained.

<< Development process >>
The production method of the present invention may include a developing step of performing a developing process on the exposed photosensitive resin composition layer. By performing the development, the unexposed portion (non-exposed portion) is removed. The developing method is not particularly limited as long as a desired pattern can be formed, and for example, a developing method such as paddle, spray, immersion, or ultrasonic wave can be adopted.
Development is performed using a developer. The developer can be used without particular limitation as long as the unexposed portion (non-exposed portion) is removed. The developer preferably contains an organic solvent, and more preferably the developer contains 90% by mass or more of the organic solvent. In the present invention, the developer preferably contains an organic solvent having a ClogP value of -1 to 5, and more preferably contains an organic solvent having a ClogP value of 0 to 3. The ClogP value can be obtained as a calculated value by inputting a structural formula in ChemBioDraw.
Examples of the organic solvent include ethyl acetate, -n-butyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, and γ-butyrolactone. , Ε-caprolactone, δ-valerolactone, alkylalkyloxyacetate (eg, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (eg, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, etc.) (Ethyl ethoxyacetate, etc.)), 3-alkyloxypropionate alkyl esters (eg, methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc.) (eg, methyl 3-methoxypropionate, 3-methoxypropionate, etc.) (Ethyl, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionate alkyl esters (eg, methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, 2-alkyl) Propyl oxypropionate and the like (eg, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate), 2-alkyloxy- Methyl 2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate (eg, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate, pyruvate, etc. Ethyl acetate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutate, ethyl 2-oxobutate, etc., and as ethers, for example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl Ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc., as well as As ketones, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, etc., and as aromatic hydrocarbons, for example, toluene, xylene, anisole, limonene. Etc., Dimethyl sulfoxide is preferably mentioned as the sulfoxides.
In the present invention, cyclopentanone and γ-butyrolactone are particularly preferable, and cyclopentanone is more preferable.
The developer preferably has 50% by mass or more of an organic solvent, more preferably 70% by mass or more of an organic solvent, and further preferably 90% by mass or more of an organic solvent. Further, the developer may be an organic solvent having an amount of 100% by mass.
The developer is preferably a non-alkali developer. From this point of view, it is preferable that the developer containing the organic solvent as the main component does not contain an alkaline compound. For example, the sodium hydroxide aqueous solution, the potassium hydroxide aqueous solution, the sodium carbonate aqueous solution, the potassium carbonate aqueous solution and the like described in [0064] of Patent Document 1 are excluded from the preferable developing solution applied to the present invention.

The development time is preferably 10 seconds to 5 minutes. The temperature of the developing solution at the time of development is not particularly determined, but is usually 20 to 40 ° C.
After the treatment with the developer, further rinsing may be performed. The rinsing is preferably performed with a solvent different from that of the developing solution. For example, it can be rinsed with a solvent contained in the photosensitive resin composition. The rinsing time is preferably 5 seconds to 1 minute.

<< Heating process >>
The production method of the present invention preferably includes a step of heating after a film forming step (layer forming step), a drying step, or a developing step. In the heating step, the cyclization reaction of the polymer precursor proceeds. Further, the composition of the present invention may contain a radically polymerizable compound other than the polymer precursor, but the curing of the radically polymerizable compound other than the unreacted polymer precursor can also proceed in this step. The heating temperature (maximum heating temperature) of the layer in the heating step is preferably 50 ° C. or higher, more preferably 80 ° C. or higher, further preferably 140 ° C. or higher, and 160 ° C. or higher. Is more preferable, and it is even more preferable that the temperature is 170 ° C. or higher. The upper limit is preferably 500 ° C. or lower, more preferably 450 ° C. or lower, further preferably 350 ° C. or lower, further preferably 250 ° C. or lower, and preferably 220 ° C. or lower. Even more preferable.
The heating is preferably performed at a heating rate of 1 to 12 ° C./min from the temperature at the start of heating to the maximum heating temperature, more preferably 2 to 10 ° C./min, still more preferably 3 to 10 ° C./min. By setting the temperature rise rate to 1 ° C./min or more, it is possible to prevent excessive volatilization of amine while ensuring productivity, and by setting the temperature rise rate to 12 ° C./min or less, the cured membrane can be prevented from excessive volatilization. Residual stress can be relaxed.
The temperature at the start of heating is preferably 20 ° C. to 150 ° C., more preferably 20 ° C. to 130 ° C., and even more preferably 25 ° C. to 120 ° C. The temperature at the start of heating refers to the temperature at which the process of heating to the maximum heating temperature is started. For example, when the photosensitive resin composition is applied onto a substrate and then dried, the temperature of the film (layer) after drying is, for example, 30 higher than the boiling point of the solvent contained in the photosensitive resin composition. It is preferable to gradually raise the temperature from a temperature as low as about 200 ° C.
The heating time (heating time at the maximum heating temperature) is preferably 10 to 360 minutes, more preferably 20 to 300 minutes, and even more preferably 30 to 240 minutes.
In particular, when forming a multi-layered laminate, the heating temperature is preferably 180 ° C. to 320 ° C., more preferably 180 ° C. to 260 ° C., from the viewpoint of adhesion between the layers of the cured film. The reason is not clear, but it is considered that the ethynyl groups of the polymer precursors between the layers are undergoing a crosslinking reaction at this temperature.

Heating may be performed in stages. As an example, the temperature is raised from 25 ° C. to 180 ° C. at 3 ° C./min and held at 180 ° C. for 60 minutes, the temperature is raised from 180 ° C. to 200 ° C. at 2 ° C./min, and the temperature is kept at 200 ° C. for 120 minutes. , Such as a pretreatment step may be performed. The heating temperature as the pretreatment step is preferably 100 to 200 ° C, more preferably 110 to 190 ° C, and even more preferably 120 to 185 ° C. In this pretreatment step, it is also preferable to perform the treatment while irradiating with ultraviolet rays as described in US Pat. No. 9,159,547. It is possible to improve the characteristics of the film by such a pretreatment step. The pretreatment step may be performed in a short time of about 10 seconds to 2 hours, more preferably 15 seconds to 30 minutes. The pretreatment may be performed in two or more steps, for example, the pretreatment step 1 may be performed in the range of 100 to 150 ° C., and then the pretreatment step 2 may be performed in the range of 150 to 200 ° C.
Further, cooling may be performed after heating, and the cooling rate in this case is preferably 1 to 5 ° C./min.

It is preferable to carry out the heating step in an atmosphere having a low oxygen concentration by flowing an inert gas such as nitrogen, helium or argon from the viewpoint of preventing decomposition of the polymer precursor. The oxygen concentration is preferably 50 ppm (volume ratio) or less, and more preferably 20 ppm (volume ratio) or less.

<< Metal layer forming process >>
The production method of the present invention preferably includes a metal layer forming step of forming a metal layer on the surface of the photosensitive resin composition layer after the development treatment.
As the metal layer, existing metal species can be used without particular limitation, and copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold and tungsten are exemplified, copper and aluminum are more preferable, and copper is preferable. More preferred.
The method for forming the metal layer is not particularly limited, and an existing method can be applied. For example, the methods described in JP-A-2007-157879, JP-A-2001-521288, JP-A-2004-214501, and JP-A-2004-101850 can be used. For example, photolithography, lift-off, electrolytic plating, electroless plating, etching, printing, and a combination method thereof can be considered. More specifically, a patterning method combining sputtering, photolithography and etching, and a patterning method combining photolithography and electrolytic plating can be mentioned.
The thickness of the metal layer is preferably 0.1 to 50 μm, more preferably 1 to 10 μm at the thickest portion.

<< Laminating process >>
The production method of the present invention preferably further includes a laminating step.
The laminating step is the film forming step (layer forming step) and the heating step again on the surface of the cured film (resin layer) or the metal layer, or the film forming step (layer forming) on the photosensitive resin composition. Step), the exposure step, and the development processing step are a series of steps including performing the steps in the above order. Needless to say, the laminating step may further include the above-mentioned drying step, heating step, and the like.
When the laminating step is further performed, the surface activation treatment step may be further performed after the heating step, the exposure step, or the metal layer forming step. Plasma treatment is exemplified as the surface activation treatment.
The laminating step is preferably performed 2 to 5 times, more preferably 3 to 5 times.
For example, a structure such as a resin layer / metal layer / resin layer / metal layer / resin layer / metal layer is preferable, and the resin layer is preferably 3 layers or more and 7 layers or less, and more preferably 3 layers or more and 5 layers or less.
That is, in the present invention, in particular, after the metal layer is provided, the film forming step (layer forming step) and the heating step of the photosensitive resin composition, or the photosensitive resin composition is further covered so as to cover the metal layer. It is preferable that the film forming step (layer forming step), the exposure step, and the developing treatment step (more heating step if necessary) are performed in the above order. By alternately performing the laminating step of laminating the photosensitive resin composition layer (resin) and the metal layer forming step, the photosensitive resin composition layer (resin layer) and the metal layer can be alternately laminated.

The present invention also discloses a semiconductor device having the cured film or laminate of the present invention. As specific examples of the semiconductor device in which the photosensitive resin composition of the present invention is used to form the interlayer insulating film for the rewiring layer, the description in paragraphs 0213 to 0218 and FIG. 1 of JP-A-2016-0273557 are taken into consideration. Yes, these contents are incorporated herein.
Other examples include forming a pattern of a sealing film, a substrate material (base film or coverlay of a flexible printed circuit board, an interlayer insulating film), or an insulating film for mounting purposes as described above by etching. For these applications, for example, Science & Technology Co., Ltd. "High-performance and applied technology of polyimide" April 2008, Masaaki Kakimoto / supervision, CMC technical library "Basics and development of polyimide materials" published in November 2011 , Japan Polyimide / Aromatic Polymer Study Group / ed., "Latest Polyimide Basics and Applications" NTS, August 2010, etc. can be referred to.

Hereinafter, the present invention will be described in more detail with reference to examples. The materials, amounts used, ratios, treatment contents, treatment procedures, etc. shown in the following examples can be appropriately changed as long as they do not deviate from the gist of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise specified, "part" and "%" are based on mass.

<Synthesis of polymer precursor (resin)>
<Synthesis example 1>
[Synthesis of polyimide precursor A-1 from 4,4'-oxydiphthalic acid dianhydride, 2-hydroxyethylmethacrylate and 4,4'-diaminodiphenyl ether]
21.2 g of 4,4'-oxydiphthalic acid dianhydride, 18.0 g of 2-hydroxyethyl methacrylate, 23.9 g of pyridine, 1 mg of water and 250 mL of diglyme were mixed and mixed at 60 ° C. Stirring at temperature for 4 hours produced a diester of 4,4'-oxydiphthalic acid dianhydride and 2-hydroxyethyl methacrylate. As a result of measuring the water content of the obtained reaction solution, 133 mass ppm was contained. The reaction mixture was then cooled to −10 ° C. and 17.0 g of SOCL ₂ was added over 60 minutes while keeping the temperature at −10 ° C. After diluting with 50 mL of N-methylpyrrolidone, a solution of 25.1 g of 4,4'-diaminodiphenyl ether in 100 mL of N-methylpyrrolidone was added dropwise to the reaction mixture at −10 ° C. over 60 minutes. After stirring the mixture for 2 hours, 20 mL of ethyl alcohol was added. The polyimide precursor was then precipitated in 6 liters of water and the water-polyimide precursor mixture was stirred for 15 minutes. The solid polyimide precursor was filtered and dissolved in 380 g of tetrahydrofuran. The obtained solution was filtered by precipitating the polyimide precursor in 6 liters of water and dried at 45 ° C. under reduced pressure for 3 days to obtain a solid powder polyimide precursor. This polyimide precursor A-1 had a weight average molecular weight of 23300 and a number average molecular weight of 9600.

<Synthesis example 2>
[Synthesis of polyimide precursor A-2 from 4,4'-oxydiphthalic acid dianhydride, 2-hydroxyethyl methacrylate and diamine (a) shown below]
21.2 g of 4,4'-oxydiphthalic acid dianhydride, 18.0 g of 2-hydroxyethyl methacrylate, 23.9 g of pyridine, 1 mg of water and 250 mL of diglyme (diethylene glycol dimethyl ether) were mixed. , 60 ° C. for 4 hours to produce a diester of 4,4'-oxydiphthalic acid dianhydride and 2-hydroxyethyl methacrylate. As a result of measuring the water content of the obtained reaction solution, 120 mass ppm was contained. The reaction mixture was then cooled to −10 ° C. and 17.0 g of SOCL ₂ was added over 60 minutes while keeping the temperature at −10 ° C. After diluting with 50 mL of N-methylpyrrolidone, a solution of 38.0 g of the hydroxyl group-containing diamine (a) shown below in 100 mL of N-methylpyrrolidone is added dropwise to the reaction mixture at −10 ° C. over 60 minutes. Then, after stirring the mixture for 2 hours, 20 mL of ethyl alcohol was added. The polyimide precursor was then precipitated in 6 liters of water and the water-polyimide precursor mixture was stirred for 15 minutes. The solid polyimide precursor was filtered and dissolved in 380 g of tetrahydrofuran. The obtained solution was filtered by precipitating the polyimide precursor in 6 liters of water and dried at 45 ° C. under reduced pressure for 3 days to obtain a solid powder polyimide precursor. The polyimide precursor A-2 had a weight average molecular weight of 29400, a number average molecular weight of 10800, and an acid value of 5.6 mgKOH / g.
Diamine (a)

<Synthesis example 3>
[Synthesis of polyimide precursor A-3 from 4,4'-oxydiphthalic acid dianhydride, 2-hydroxyethylmethacrylate and 4,4'-diaminodiphenyl ether]
21.2 g of 4,4'-oxydiphthalic acid dianhydride, 18.0 g of 2-hydroxyethyl methacrylate, 23.9 g of pyridine, 1 mg of water and 250 mL of diglyme were mixed and mixed at 60 ° C. Stirring at temperature for 4 hours produced a diester of 4,4'-oxydiphthalic acid dianhydride and 2-hydroxyethyl methacrylate. As a result of measuring the water content of the obtained reaction solution, 1450 mass ppm was contained. The reaction mixture was then cooled to −10 ° C. and 17.0 g of SOCL ₂ was added over 60 minutes while keeping the temperature at −10 ° C. After diluting with 50 mL of N-methylpyrrolidone, a solution of 25.1 g of 4,4'-diaminodiphenyl ether in 100 mL of N-methylpyrrolidone was added dropwise to the reaction mixture at −10 ° C. over 60 minutes. After stirring the mixture for 2 hours, 20 mL of ethyl alcohol was added. The polyimide precursor was then precipitated in 6 liters of water and the water-polyimide precursor mixture was stirred for 15 minutes. The solid polyimide precursor was filtered and dissolved in 380 g of tetrahydrofuran. The obtained solution was filtered by precipitating the polyimide precursor in 6 liters of water and dried at 45 ° C. under reduced pressure for 3 days to obtain a solid powder polyimide precursor. This polyimide precursor A-3 had a weight average molecular weight of 22,000 and a number average molecular weight of 10,000.

<Synthesis example 4>
[Synthesis of polyimide precursor composition A-4 from 4,4'-oxydiphthalic anhydride, 2-hydroxyethylmethacrylate and 4,4'-diaminodiphenyl ether]
42.4 g of 4,4'-oxydiphthalic anhydride, 36.4 g of 2-hydroxyethyl methacrylate, 22.07 g of pyridine and 100 mL of tetrahydrofuran were mixed and stirred at a temperature of 60 ° C. for 4 hours. The reaction mixture was then cooled to −10 ° C. and a solution of 34.35 g of diisopropylcarbodiimide dissolved in 80 mL of γ-butyrolactone was added dropwise to the reaction mixture at −10 ± 5 ° C. over 60 minutes to add 30 to the mixture. The mixture was stirred for a minute. Subsequently, a solution prepared by dissolving 25.1 g of 4,4'-diaminodiphenyl ether in 200 mL of γ-butyrolactone was added dropwise to the reaction mixture at −10 ± 5 ° C. over 60 minutes, and the mixture was stirred for 1 hour. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution. The obtained reaction solution was filtered by precipitating the polyimide precursor in 14 L of water, and dried under reduced pressure at 45 ° C. for 2 days. The obtained powdery polyimide precursor A-4 had a weight average molecular weight of 23800 and a number average molecular weight of 8700.

<Synthesis Example 5>
[Synthesis of polybenzoxazole precursor A-5 from 4,4'-carbonyl dibenzoic acid, 2,2'-bis (3-amino-4-hydroxyphenyl) hexafluoropropane, methacrylic acid chloride]
18.5 g of 4,4'-carbonyldibenzoic acid and 250 mL of N-methylpyrrolidone were mixed. The reaction mixture was then cooled to −10 ° C. and 17.0 g of SOCL ₂ was added over 60 minutes while keeping the temperature at −10 ± 5 ° C. Next, a solution of 21.0 g of 2,2'-bis (3-amino-4-hydroxyphenyl) hexafluoropropane dissolved in 100 mL of N-methylpyrrolidone was reacted at -10 ± 5 ° C. for 60 minutes. It was added dropwise to the mixture and the mixture was stirred for 2 hours. Next, 9.3 g of triethylamine was added to the obtained reaction solution under ice-cooling, 12.0 g of methacrylic acid chloride was added dropwise, and the mixture was further stirred under ice-cooling for 2 hours to contain a polybenzoxazole precursor. Got The polybenzoxazole precursor was then precipitated in 6 liters of water and the water-polybenzoxazole precursor mixture was stirred at a rate of 5000 rpm for 15 minutes. The solid polybenzoxazole precursor was filtered off and dissolved in 380 g of tetrahydrofuran. The resulting solution was added to 6 liters of water to precipitate the polybenzoxazole precursor and the water-polybenzoxazole precursor mixture was stirred at a rate of 5000 rpm for 15 minutes. The solid polybenzoxazole precursor was filtered off again and dried under reduced pressure at 45 ° C. for 3 days. This polybenzoxazole precursor A-5 had a weight average molecular weight of 28,900 and a number average molecular weight of 8,800. The ratio of the components having a molecular weight of 1,000 or less was 0.3% by mass.

<Preparation of photosensitive resin composition>
The polymer precursor was mixed with the components shown in Table 1 below to prepare a coating solution of the photosensitive resin composition as a uniform solution. Each photosensitive resin composition was pressure-filtered through a filter manufactured by ADVANTEC with a pore width of 0.8 μm.

<Base generation temperature>
5% mass loss temperature when 3.0 mg of polymer precursor is weighed and heated to 500 ° C. at a heating rate of 20 ° C./min using TGA (TA Instruments, Q500 type). Was measured as the base generation temperature from the thermal base generator. The pKa of the conjugate acid of the generated base was determined by identifying the degradation product species by LC-MS and calculating the pKa of the structure of the conjugate acid of the obtained degradation product species using the following software package. Software Package: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007 ACD / Labs)

<Amount of acid groups, etc.>
For each photosensitive resin composition in Examples and Comparative Examples, the total content of acid groups and acid generators contained in the photosensitive agent (amount of acid groups, etc .: ΣAc [mmol / g]) is determined by NMR (nuclear magnetism). It was measured using the resonance) method.

<Storage stability>
Each photosensitive resin composition was left at room temperature (25 ° C.), and the storage stability was evaluated by the time until the precipitate could be visually confirmed.
A: No precipitation was observed for more than 2 weeks.
B: Precipitation was observed within 2 weeks beyond 1 week.
C: Precipitation was observed within 1 week.
D: Insoluble matter was found at the preparation stage.

<Mechanical properties (tensile strength)>
Each photosensitive resin composition was applied onto a silicon wafer by a spin coating method to form a photosensitive resin composition layer. The silicon wafer to which the obtained photosensitive resin composition layer was applied was dried on a hot plate at 100 ° C. for 4 minutes to obtain a uniform photosensitive resin composition layer having a thickness of 20 μm on the silicon wafer. The photosensitive resin composition layer on the silicon wafer was exposed to an exposure energy of 400 mJ / cm ² using a broadband exposure machine (manufactured by Ushio, Inc .: UX-1000SN-EH01), and the exposed photosensitive resin composition was exposed. The layer (resin layer) was heated at a heating rate of 5 ° C./min under a nitrogen atmosphere, reached 230 ° C., and then heated for 3 hours. The cured resin layer was immersed in a 3% hydrofluoric acid solution, and the resin layer was peeled off from the silicon wafer to obtain a resin film.
A tensile strength test was performed on the resin film peeled from the silicon wafer. The test was performed using a tensile tester (Tencilon) with a crosshead speed of 300 mm / min, a width of 10 mm, and a sample length of 50 mm in an environment of 25 ° C. and 65% RH (relative humidity) in the longitudinal and width directions of the film. Measured in accordance with JIS-K6251 (Japanese Industrial Standards). For the evaluation, the breaking elongation at the time of cutting was measured 10 times each, and the average value was used. The results were evaluated by classifying them as follows.
A: 60% or more B: 50% or more and less than 60% C: less than 50%

<Developer solubility in unexposed areas>
Each photosensitive resin composition was applied on a silicon wafer by spin coating. The silicon wafer to which the photosensitive resin composition was applied was heated on a hot plate at 100 ° C. for 4 minutes to obtain a photosensitive resin composition layer having a thickness of 20 μm. The dissolution rate was calculated by immersing the photosensitive resin composition layer in cyclopentanone at 23 ° C. and measuring the time required for complete dissolution. A resist development analyzer (RDA-790EB manufactured by LTJ) was used for the test. The results were evaluated by classifying them as follows.
A: 0.55 μm / sec or more B: 0.4 μm / sec or more and less than 0.55 μm / sec C: less than 0.4 μm / sec

<Photolithography>
Each photosensitive resin composition was applied on a silicon wafer by spin coating. The silicon wafer to which the photosensitive resin composition was applied was dried on a hot plate at 100 ° C. for 4 minutes to form a photosensitive resin composition layer having a thickness of 20 μm on the silicon wafer. The photosensitive resin composition layer on the silicon wafer was exposed using a stepper (Nikon NSR 2005 i9C). The exposure is i-line, using a line-and-space photomask in 1 μm increments from 5 μm to 25 μm with exposure energies of 200, 300, 400, 500, 600, 700, 800 mJ / cm ² at a wavelength of 365 nm. , The exposure was performed.
The exposed photosensitive resin composition layer was negatively developed with cyclopentanone for 60 seconds. The smaller the line width of the obtained photosensitive resin composition layer (pattern), the larger the difference in solubility between the light-irradiated portion and the light-non-irradiated portion in the developing solution, which is a preferable result. .. Further, if the change in the line width is small with respect to the change in the exposure energy, it means that the exposure latitude is wide, and a preferable result is obtained. The measurement limit is 5 μm. The results were evaluated by classifying them as follows.
A: 10 μm or less B: More than 10 μm 20 μm or less C: More than 20 μm, or a pattern with a line width with edge sharpness could not be obtained.

<Photopolymerization initiator (photosensitive agent)>
IRGACURE OXE01 (trade name) BASF IRGACURE784 (trade name) BASF IRGACURE OXE01 / IRGACURE784 (both trade names) BASF compounding ratio 1/1 (mass ratio)

ΣAc: Total content of acid groups and acid generating groups in polymer precursors and photosensitive agents [mmol / g]

<Radical polymerizable compound (polymerizable compound)>
SR-209 (Commodity English) [2 Sensual] Arkema A-TMMT (trade name) [4 Sensual] Shin Nakamura Chemical Industry Co., Ltd. DPHA (trade name) [6 Sensual] Nippon Kayaku Co., Ltd.

<Solvent>
NMP (N-methylpyrrolidone) / Ethyl lactate BGL (γ-butyrolactone) / DMSO (dimethyl sulfoxide)
Blending ratio 200/100 (mass ratio)

<Thermal base generator>

TGB1:
pKa32, base generation temperature 180 ° C, pKa11.4 of the conjugate acid of the generated base, molar extinction coefficient 40 l / (mol · cm)
TGB2:
pKa4, base generation temperature 150 ° C., pKa5.1 of the conjugate acid of the generated base, molar extinction coefficient 0 l / (mol · cm)
TGB3:
pKa30, base generation temperature 200 ° C., pKa11.4 of the conjugate acid of the generated base, molar extinction coefficient 20 l / (mol · cm)
TGB4:
pKa16.2, base generation temperature 170 ° C, pKa11.4 of the conjugate acid of the generated base, molar extinction coefficient 10 l / (mol · cm)
TGB5:
pKa30, base generation temperature 160 ° C, pKa9 of the conjugate acid of the generated base, molar extinction coefficient 0 l / (mol · cm)
TGB6:
pKa32, base generation temperature 190 ° C., pKa10.4 of the conjugate acid of the generated base, molar extinction coefficient 0 l / (mol · cm)

As can be seen from the above results, the photosensitive resin composition using the thermobase generator specified in the present invention is excellent in storage stability, mechanical properties, developer solubility of unexposed areas, and lithographic properties. The results (B or higher) were shown, and it was found to be excellent overall. On the other hand, the one using the thermal base generator (TBG2) having a tertiary amine structure and a carboxyl group (Comparative Example 1) was inferior in storage stability. Those without a thermal base generator (Comparative Example 2) were inferior in mechanical properties. Those using a polymer precursor having a high acid value (Comparative Example 3) were inferior in storage stability, developer solubility in unexposed areas, and lithographic properties.

<Example 100>
The photosensitive resin composition of Example 1 was pressure-filtered through a filter having a pore width of 0.8 μm, and then the photosensitive resin composition was applied onto a silicon wafer by a spin coating method. The silicon wafer coated with the photosensitive resin composition was dried on a hot plate at 100 ° C. for 5 minutes to form a uniform photosensitive resin composition layer having a thickness of 15 μm on the silicon wafer. The photosensitive resin composition layer on the silicon wafer was exposed to an exposure energy of 500 mJ / cm ² using a stepper (Nikon NSR 2005 i9C), and the exposed photosensitive resin composition layer (resin layer) was subjected to cyclopenta. The non-developed holes were developed for 60 seconds to form holes having a diameter of 10 μm (patterning). Then, the temperature was raised at a heating rate of 10 ° C./min under a nitrogen atmosphere, and after reaching 250 ° C., the temperature was maintained at this temperature for 3 hours. After cooling to room temperature, a thin copper layer (metal layer) having a thickness of 2 μm was formed on a part of the surface of the photosensitive resin composition layer so as to cover the hole portion. Further, on the surfaces of the metal layer and the photosensitive resin composition layer, the same type of photosensitive resin composition is used again, and the photosensitive resin composition is filtered in the same manner as described above, and the patterned film is heated for 3 hours. The procedure up to this step was repeated to prepare a laminate composed of a resin layer / metal layer / resin layer.
This resin layer (interlayer insulating film for rewiring layer) was excellent in insulating property.
Moreover, when a semiconductor device was manufactured using this interlayer insulating film for the rewiring layer, it was confirmed that the semiconductor device operated without any problem.

Claims (19)

At least one thermobase generator selected from the group consisting of the thermobase generator represented by the following formula (B1) and the thermobase generator represented by the formula (B2).
At least one polymer precursor selected from the group consisting of polyimide precursors and polybenzoxazole precursors, and
Including photosensitizer
The total content of acid groups and acid generating groups contained in the polymer precursor and the photosensitive agent is 0.5 mmol / g or less .
The molar extinction coefficient of the thermal base generator at a wavelength of 365 nm is 100 l / (mol · cm) or less.
A photosensitive resin composition in which the photosensitive agent contains a photopolymerization initiator ;

In formulas (B1) and (B2), ^R1 , ^R2 and R3 are organic groups, halogen atoms or hydrogen atoms that do not independently have a ^tertiary amine structure, respectively, except that ^R1 and ^R2 are simultaneous. It is not a hydrogen atom, and R ¹ , R ² and R ³ do not have a carboxyl group. The photosensitive resin composition according to claim 1, wherein the base generation temperature of the thermal base generator is 120 ° C. or higher and 200 ° C. or lower. The photosensitive resin composition according to claim 1 or 2, wherein the pKa of the thermal base generator is larger than 7. The photosensitive resin composition according to any one of claims 1 to 3, wherein the polymer precursor contains a polyimide precursor. The photosensitive resin composition according to claim 4, wherein the polyimide precursor is represented by the following formula (1);

In formula (1), A ¹ and A ² independently represent an oxygen atom or NH, R ¹¹¹ represents a divalent organic group, R ¹¹⁵ represents a tetravalent organic group, and R ¹¹³ and R ¹¹⁴ independently represents a hydrogen atom or a monovalent organic group. The photosensitive resin composition according to any one of claims 1 to 5 , wherein the thermal base generator comprises a thermal base generator that generates a base having a pKa of a conjugate acid of 10 or more by heating. The photosensitive resin composition according to any one of claims 1 to 6 , which is subjected to development using a developing solution containing 90% by mass or more of an organic solvent. The photosensitive resin composition according to any one of claims 1 to 7 , which is used for forming an interlayer insulating film for a rewiring layer. A cured film obtained by curing the photosensitive resin composition according to any one of claims 1 to 8 . The cured film according to claim 9 , which has a film thickness of 1 to 30 μm. A laminated body having two or more layers of the cured film according to claim 9 or 10 . A laminated body having 3 to 7 or more layers of the cured film according to claim 9 or 10 . The laminate according to claim 11 or 12 , which has a metal layer between the cured films. A method for producing a cured film, which comprises a film forming step of applying the photosensitive resin composition according to any one of claims 1 to 8 to a substrate to form a film. The method for producing a cured film according to claim 14 , further comprising an exposure step for exposing the film and a developing step for developing the film. The method for producing a cured film according to claim 15 , wherein the developer used for the development contains 90% by mass or more of an organic solvent. The method for producing a cured film according to any one of claims 14 to 16 , which comprises a step of heating the film at 80 to 450 ° C. A method for producing a laminated body, wherein the method for producing a cured film according to any one of claims 14 to 17 is performed a plurality of times. A semiconductor device having the cured film according to claim 9 or 10 or the laminate according to any one of claims 11 to 13 .