TW202020233A - Surface-treated copper foil, carrier-attached copper foil, copper-clad laminate, and printed wiring board - Google Patents

Surface-treated copper foil, carrier-attached copper foil, copper-clad laminate, and printed wiring board Download PDF

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TW202020233A
TW202020233A TW108137171A TW108137171A TW202020233A TW 202020233 A TW202020233 A TW 202020233A TW 108137171 A TW108137171 A TW 108137171A TW 108137171 A TW108137171 A TW 108137171A TW 202020233 A TW202020233 A TW 202020233A
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copper foil
treated
resin
carrier
less
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TW108137171A
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TWI740231B (en
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加藤翼
松田光由
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日商三井金屬鑛業股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/16Electroplating with layers of varying thickness
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H05K3/025Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Provided is a surface-treated copper foil that, in the case of use in the SAP method, can provide a resin substrate with a surface profile that can effectively prevent the generation of deposition that can be produced in a circuit in the step of etching an electroless copper plating layer. The surface-treated copper foil is a surface-treated copper foil that has a treated surface on at least one side thereof. When a resin film is hot-press bonded to the treated surface, the surface shape of the treated surface is transferred to the surface of the resin film, and the surface-treated copper film is then removed by etching, the skewness Ssk for the surface of the remaining resin film, as measured in accordance with ISO 25178, is less than or equal to -0.6.

Description

表面處理銅箔、附載體銅箔、覆銅層積板及印刷配線板Surface treated copper foil, copper foil with carrier, copper clad laminate and printed wiring board

本發明係有關於表面處理銅箔、附載體銅箔、覆銅層積板及印刷配線板The invention relates to surface-treated copper foil, copper foil with carrier, copper-clad laminate and printed wiring board

近年,作為適合電路的微細化的印刷配線板的製造工法,半加成法(SAP法)廣泛地被採用。SAP法為適合形成極微細的電路的方法,作為其一例使用附載體粗糙化處理銅箔進行。例如,如圖1及2所示,將具備粗糙化表面的超薄銅箔10,在於下地基材11a具備下層電路11b的絕緣樹脂基板11上使用預浸物12及底塗層13進行加壓使其密著(工程(a)),剝離載體(圖未示)後,因應必要藉由雷射穿孔形成通孔14(工程(b))。接著,將超薄銅箔藉由蝕刻除法,使賦予粗糙化表面輪廓的底塗層13露出(工程(c))。在該粗糙化表面施予無電解鍍銅15(工程(d))後,藉由用乾薄膜16的曝光及顯像以預定的圖案遮蔽(工程(e)),施予電鍍銅17(工程(f))。除去乾薄膜16形成配線部分17a(工程(g))後,將相鄰配線部分17a、17a間不要的無電解鍍銅15藉由蝕刻除去(工程(h)),得到以預定圖案形成的配線18。In recent years, the semi-additive method (SAP method) has been widely adopted as a manufacturing method of a printed wiring board suitable for circuit miniaturization. The SAP method is a method suitable for forming extremely fine circuits, and as an example, it is performed using a roughened copper foil with a carrier. For example, as shown in FIGS. 1 and 2, an ultra-thin copper foil 10 having a roughened surface is applied to an insulating resin substrate 11 provided with a lower circuit 11b on a lower base material 11a using a prepreg 12 and an undercoat layer 13 to apply pressure After making it adhere (engineering (a)) and peeling off the carrier (not shown), through holes 14 are formed by laser perforation as necessary (engineering (b)). Next, the ultra-thin copper foil is removed by etching to expose the undercoat layer 13 that gives the roughened surface profile (process (c)). After applying the electroless copper plating 15 (process (d)) to the roughened surface, it is masked in a predetermined pattern by exposure and development with the dry film 16 (process (e)), and the electroplated copper 17 is applied (process (f)). After removing the dry film 16 to form the wiring part 17a (process (g)), the unnecessary electroless copper plating 15 between adjacent wiring parts 17a and 17a is removed by etching (process (h)) to obtain wiring formed in a predetermined pattern 18.

藉此利用粗糙化處理銅箔的SAP法,粗糙化處理銅箔自體在雷射穿孔後藉由蝕刻除去(工程(c))。接著,在除去粗糙化處理銅箔的層積體表面因為轉印了粗糙化處理銅箔的粗糙化處理面的凹凸形狀,在之後的工程中能夠確保絕緣層(例如底塗層層13或沒有其時為預浸物12)與鍍膜電路(例如配線18)的密著性。此外,未進行相當於工程(c)的銅箔除去工程的改良半加成法(MSAP法)也廣泛地被採用,但因為在乾薄膜除去後的蝕刻工程(相當於工程(h))需要將銅箔層與無電解鍍銅層的2個層以蝕刻除去,相較於以無電解鍍銅層1層的蝕刻除去即可的SAP法還需要進行更深的蝕刻。因此,因為產生考量更多的蝕刻量使得電路空間又更窄的必要,MSAP法在微細電路的形成性中較SAP法還差一點。亦即,在更微細的電路形成這個目的中SAP法較有利。In this way, the SAP method of roughening copper foil is used, and the roughening copper foil itself is removed by etching after laser perforation (process (c)). Next, on the surface of the laminated body from which the roughened copper foil is removed, the uneven shape of the roughened surface of the roughened copper foil is transferred, and an insulating layer (such as the undercoat layer 13 or no At this time, it is the adhesion between the prepreg 12) and the plated circuit (for example, the wiring 18). In addition, the modified semi-additive method (MSAP method) that does not perform the copper foil removal process equivalent to the process (c) is also widely used, but it is necessary because of the etching process after the dry film removal (equivalent to the process (h)) The two layers of the copper foil layer and the electroless copper plating layer are removed by etching, and deeper etching is required than the SAP method in which only one layer of the electroless copper plating layer is removed by etching. Therefore, because of the necessity of considering more etching to make the circuit space narrower, the MSAP method is a little worse than the SAP method in the formation of fine circuits. That is, the SAP method is more advantageous for the purpose of forming a finer circuit.

此外,在乾薄膜除去後的蝕刻工程(相當於工程(h))中,電路(例如配線18)與絕緣層的界面部分被蝕刻,其結果,會產生電路的根部被挖空那稱被浸蝕的稱為「插入」的現象。若產生該插入,電路與絕緣層的密著力會降低,成為電路剝落的原因。In addition, in the etching process (equivalent to process (h)) after the removal of the dry film, the interface between the circuit (for example, wiring 18) and the insulating layer is etched. As a result, the root of the circuit is hollowed out, which is called erosion. The phenomenon called "insertion". If this insertion occurs, the adhesion between the circuit and the insulating layer will decrease, causing the circuit to peel off.

另一方面,已知有控制粗糙化粒子的形狀的粗糙化處理銅箔。例如,在專利文獻1(特許第6293365號公報)中,在具有具備複數略球狀突起的粗糙化處理面的粗糙化處理銅箔中,將略球狀突起的平均高度設為2.60μm以下、且將略球狀突起的平均最大徑bave 相對於略球狀突起的平均頸徑aave 之比bave /aave 設為1.2以上,藉此在用於SAP法時,不只是優良的鍍膜電路密著性,也能夠對層積體賦予對無電解鍍銅的蝕刻性也佳的表面輪廓。 [先前技術文獻] [專利文獻]On the other hand, a roughened copper foil for controlling the shape of roughened particles is known. For example, in Patent Document 1 (Patent No. 6293365), in a roughened copper foil having a roughened surface having a plurality of slightly spherical protrusions, the average height of the slightly spherical protrusions is set to 2.60 μm or less, Moreover, the ratio of the average maximum diameter b ave of the slightly spherical protrusions to the average neck diameter a ave of the slightly spherical protrusions b ave /a ave is set to 1.2 or more, which is not only an excellent coating when used in the SAP method The circuit adhesion can also give the laminate a surface profile that is excellent in the etching property of electroless copper plating. [Prior Technical Literature] [Patent Literature]

[專利文獻1] 特許第6293365號公報[Patent Document 1] Patent No. 6293365

近年,隨著電路的更微細化,擴大了對微細電路形成有利的SAP法的採用。這點,隨著電路圖案寬度變窄,容許的插入寬度也相對縮小。又,在SAP法中,於乾薄膜除去後的蝕刻工程中,因為僅將無電解鍍銅層蝕刻除去就足夠了,能夠使用非電解銅而是能將無電解銅選擇除去的蝕刻液。藉此,能夠抑制大部分以電解銅構成的電路變細。因此,在微細電路的形成性這個點,SAP法與MSAP法相比更為利。另一方面,因為藉由SAP法形成的電路其最下部以無電解銅構成,使用上述蝕刻液時,插入更容易發生。In recent years, with the further miniaturization of circuits, the adoption of the SAP method, which is advantageous for the formation of fine circuits, has been expanded. In this regard, as the width of the circuit pattern becomes narrower, the allowable insertion width is relatively reduced. In addition, in the SAP method, in the etching process after removal of the dry film, it is sufficient to etch away only the electroless copper plating layer, and it is possible to use non-electrolytic copper but an etching solution that can selectively remove the electroless copper. With this, it is possible to suppress the thinning of most circuits composed of electrolytic copper. Therefore, the SAP method is more advantageous than the MSAP method in terms of the formation of fine circuits. On the other hand, since the bottom part of the circuit formed by the SAP method is made of electroless copper, insertion is more likely to occur when using the above etching solution.

本發明者們現在得到藉由在樹脂基材的表面,賦予以ISO25178為準據測定的偏度Ssk規定的特有的表面輪廓,在SAP法的無電解鍍銅層的蝕刻工程中,能夠有效地抑制在電路產生的插入的發生之見解。又,也得到在用於SAP法時,能夠提供能將上述特有的表面輪廓賦予至樹脂基材的表面處理銅箔的見解。The present inventors have now obtained that by giving the surface profile specified by the skewness Ssk measured in accordance with ISO 25178 on the surface of the resin substrate, it can be effectively used in the etching process of the electroless copper plating layer of the SAP method Insights to suppress the occurrence of insertions generated in the circuit. In addition, when the method is used in the SAP method, it is also possible to provide an insight that a surface-treated copper foil that can impart the above-mentioned unique surface profile to a resin substrate.

因此,本發明的目的為提供種表面處理銅箔,在用於SAP法時,於無電解鍍銅層的蝕刻工程中,將能夠有效抑制產生於電路的插入的發生的抑制表面輪廓賦予至樹脂基材。Therefore, an object of the present invention is to provide a surface-treated copper foil which, when used in the SAP method, imparts to the resin a surface profile that can effectively suppress the occurrence of circuit insertion in the etching process of electroless copper plating Substrate.

根據本發明的一態樣,提供一種表面處理銅箔,至少在一側具有處理表面; 在前述處理表面將樹脂薄膜熱壓附並將前述處理表面的表面形狀轉印至前述樹脂薄膜的表面,藉由蝕刻將前述表面處理銅箔除去時,殘留的前述樹脂薄膜的前述表面中的以ISO25178為準據測定的偏度Ssk為-0.6以下。According to one aspect of the present invention, there is provided a surface-treated copper foil having a treated surface on at least one side; When the resin film is thermally pressed on the treated surface and the surface shape of the treated surface is transferred to the surface of the resin film, and the surface-treated copper foil is removed by etching, among the remaining surfaces of the resin film The skewness Ssk measured under ISO25178 is the criterion -0.6 or less.

根據本發明的其他態樣,提供一種附載體銅箔,具備:載體、設於該載體上的剝離層、及在該剝離層上將前述處理表面作為外側設置的表面處理銅箔。According to another aspect of the present invention, there is provided a copper foil with a carrier, comprising: a carrier, a peeling layer provided on the carrier, and a surface-treated copper foil provided on the peeling layer with the aforementioned treated surface as an outer side.

根據本發明的其他一態樣,提供具備前述表面處理銅箔或前述附載體銅箔的覆銅層積板。According to another aspect of the present invention, there is provided a copper-clad laminate including the surface-treated copper foil or the carrier-attached copper foil.

根據本發明的其他一態樣,提供利用前述表面處理銅箔或前述附載體銅箔得到的印刷配線板。According to another aspect of the present invention, there is provided a printed wiring board obtained by using the surface-treated copper foil or the carrier-attached copper foil.

根據本發明的其他一態樣,提供一種樹脂基材,至少一表面以ISO25178為準據測定的偏度Ssk為-0.6以下。According to another aspect of the present invention, a resin substrate is provided, and the skewness Ssk measured on at least one surface according to ISO 25178 is -0.6 or less.

定義definition

用來特定本發明的用語及參數的定義如以下所示。Definitions of terms and parameters used to specify the present invention are shown below.

本說明書中「偏度Ssk」指的是以ISO25178為準據測定的表示高度分佈的對稱性的參數。該值為0時表示高度分佈上下對稱。又,如圖3A所示,該值比0還小時,表示細的谷多的表面。另一方面,如圖3B所示,該值比0還大時,表示細峰多的表面。偏度Ssk能夠藉由將在處理表面的預定測定面積(例如57074.677μm2 的二維區域)的表面輪廓以市售的雷射顯微鏡測定來算出。In this specification, "skewness Ssk" refers to a parameter indicating the symmetry of the height distribution measured based on ISO25178. When the value is 0, it means that the height distribution is symmetrical. As shown in FIG. 3A, this value is smaller than 0, which indicates a surface with many fine valleys. On the other hand, as shown in FIG. 3B, when the value is greater than 0, it indicates a surface with many fine peaks. The skewness Ssk can be calculated by measuring the surface profile of a predetermined measurement area (for example, a two-dimensional area of 57074.677 μm 2 ) on the processing surface with a commercially available laser microscope.

本說明書中「峰頂點的算術平均曲率Spc」指的是以ISO25178為準據測定的表示表面的峰頂點的主曲率的算術平均的參數。該值越小表示與其他物體的接觸的點帶有圓角。另一方面,該值越大表示與其他物體的接觸的點為尖。直接來說,峰頂點的算術平均曲率Spc可以說是能以雷射顯微鏡測定的表示凸起圓角的參數。峰頂點的算術平均曲率Spc能夠藉由將在處理表面的預定測定面積(例如57074.677μm2 的二維區域)的表面輪廓以市售的雷射顯微鏡測定來算出。The "arithmetic mean curvature Spc of the peak apex" in this specification refers to a parameter indicating the arithmetic mean of the main curvature of the peak apex of the surface measured based on ISO25178. The smaller the value, the point of contact with other objects has rounded corners. On the other hand, a larger value indicates that the point of contact with other objects is sharp. Directly speaking, the arithmetic mean curvature Spc of the peak apex can be said to be a parameter indicating convex roundness that can be measured by a laser microscope. The arithmetic mean curvature Spc of the peak apex can be calculated by measuring the surface profile of a predetermined measurement area (for example, a two-dimensional area of 57074.677 μm 2 ) on the treated surface with a commercially available laser microscope.

本說明書中「峰的頂點密度Spd」指的是以ISO25178為準據測定的表示每單位面積的峰頂點之數的參數。該值越大暗示與其他物體的接觸點之數越多。峰的頂密度Spd能夠藉由將在處理表面的預定測定面積(例如57074.677μm2 的二維區域)的表面輪廓以市售的雷射顯微鏡測定來算出。In this specification, "peak apex density Spd" refers to a parameter indicating the number of peak apexes per unit area measured based on ISO25178. The larger the value, the greater the number of contact points with other objects. The peak top density Spd can be calculated by measuring the surface profile of a predetermined measurement area (for example, a two-dimensional area of 57074.677 μm 2 ) on the treated surface with a commercially available laser microscope.

本說明書中「面的負荷曲線」(以下,單稱「負荷曲線」)指的是以ISO25178為準據測定的表示負荷面積率從0%成為100%的高度的曲線。負荷面積率如圖4所示為表示某高度c以上的區域的面積的參數。在高度c的負荷面積率相當於圖4中的Smr(c)。如圖5所示,使負荷面積從0%沿著負荷曲線將負荷面積率之差設為40%減去的負荷曲線的割線,從負荷面積率0%開始移動,將割線的傾斜最緩的位置稱為負荷曲線的中央部分。相對於該中央部分,將縱軸方向的偏差的二次和成為最小的直線稱為等價直線。將從等價直線的負荷面積率0%到100%的高度範圍中包含的部分稱為核心部。將比核心部還高的部分稱為突出峰部,將比核心部還低的部分稱為突出谷部。核心部部表示初期磨耗結束後與其他物體接觸的區域的高度。In this manual, "surface load curve" (hereinafter, simply referred to as "load curve") refers to a curve that shows the height of the load area ratio from 0% to 100% measured based on ISO25178. As shown in FIG. 4, the load area ratio is a parameter indicating the area of a region of a certain height c or more. The load area ratio at height c corresponds to Smr(c) in FIG. 4. As shown in Figure 5, make the load area from 0% along the load curve and set the difference of the load area ratio to 40% minus the secant of the load curve. The position is called the central part of the load curve. With respect to this central portion, a straight line having the smallest quadratic sum of deviations in the longitudinal axis direction is called an equivalent straight line. The portion included in the height range from the equivalent area of the load area ratio of 0% to 100% is called the core portion. The portion higher than the core portion is called a protruding peak portion, and the portion lower than the core portion is called a protruding valley portion. The core part indicates the height of the area in contact with other objects after the initial wear.

本說明書中「極點高度Sxp」如圖6所示,指的是以ISO25178為準據測定的表示負荷面積率p%與負荷面積率q%的高度的差分的參數。Sxp表示在表面之中將特別高的峰去除後的表面的平均面與表面的高度的差分。本說明書中,Sxp表示負荷面積率2.5%及負荷面積率50%的高度的差分。極點高度Sxp能夠藉由將在處理表面的預定測定面積(例如57074.677μm2 的二維區域)的表面輪廓以市售的雷射顯微鏡測定來算出。"Pole height Sxp" in this specification, as shown in FIG. 6, refers to a parameter indicating the difference between the heights of the load area ratio p% and the load area ratio q% measured based on ISO25178. Sxp represents the difference between the average height of the surface and the height of the surface after removing particularly high peaks from the surface. In this specification, Sxp represents the difference in height between the load area ratio of 2.5% and the load area ratio of 50%. The pole height Sxp can be calculated by measuring the surface profile of a predetermined measurement area (for example, a two-dimensional area of 57074.677 μm 2 ) on the treated surface with a commercially available laser microscope.

本說明書中「分離突出峰部與核心部的負荷面積率Smr1」,如圖5所示,指的是以ISO25178為準據測定的表示核心部的上部的高度與負荷曲線的交點的負荷面積率(亦即分離核心部與突出峰部的負荷面積率)的參數。該值越大,代表突出峰部所占的比例越大。又,本說明書中「分離突出谷部與核心部的負荷面積率Smr2」如圖5所示,指的是以ISO25178為準據測定的表示核心部的下部的高度與負荷曲線的交點的負荷面積率(亦即分離核心部與突出谷部的負荷面積率)的參數。該值越大,代表突出谷部所占的比例越大。In this specification, the "load area ratio Smr1 separating the protruding peak portion and the core portion", as shown in FIG. 5, refers to the load area ratio indicating the intersection of the height of the upper portion of the core portion and the load curve measured based on ISO25178 (That is, the load area ratio separating the core part and the protruding peak part). The larger the value, the greater the proportion of prominent peaks. In addition, as shown in FIG. 5, the “load area ratio Smr2 separating the protruding valley part and the core part” in this specification refers to the load area indicating the intersection of the height of the lower part of the core part and the load curve measured in accordance with ISO25178. The parameter of the rate (that is, the load area ratio separating the core part and the protruding valley part). The larger the value, the greater the proportion of prominent valleys.

本說明書中「核心部的實體體積Vmc」指的是以ISO25178為準據測定的表示核心部的體積的參數。Vmc如圖7所示,表示分離突出谷部與核心部的負荷面積率Smr2的實體體積、與分離突出峰部與核心部的負荷面積率Smr1的實體體積之間的差。核心部的實體體積Vmc能夠藉由將在處理表面的預定測定面積(例如57074.677μm2 的二維區域)的表面輪廓以市售的雷射顯微鏡測定來算出。在本說明書中,將分離突出峰部與核心部的負荷面積率Smr1指定成10%、將分離突出谷部與核心部的負荷面積率Smr2指定成80%,算出核心部的實體體積Vmc。In this specification, "the physical volume of the core part Vmc" refers to a parameter indicating the volume of the core part measured based on ISO25178. As shown in FIG. 7, Vmc represents the difference between the physical volume separating the load area ratio Smr2 of the protruding valley and the core, and the physical volume separating the load area ratio Smr1 of the protruding peak and core. The physical volume Vmc of the core portion can be calculated by measuring the surface profile of a predetermined measurement area (for example, a two-dimensional area of 57074.677 μm 2 ) on the treatment surface with a commercially available laser microscope. In this specification, the load area ratio Smr1 separating the peaks and cores is 10%, and the load area ratio Smr2 separating the valleys and cores is 80%, and the physical volume Vmc of the core is calculated.

於本說明書中,電解銅箔的「電極面」指的是電解銅箔製作時與陰極連接之側的面。In this specification, the "electrode surface" of the electrolytic copper foil refers to the surface on the side connected to the cathode when the electrolytic copper foil is produced.

於本說明書中,電解銅箔的「析出面」為電解銅箔製作時電解銅析出之側的面,亦即不與陰極連接之側的面。In this specification, the "precipitation surface" of the electrolytic copper foil is the surface on the side where the electrolytic copper precipitates when the electrolytic copper foil is produced, that is, the surface on the side not connected to the cathode.

表面處理銅箔 本發明的銅箔為表面處理銅箔。該表面處理銅箔為在處理表面將樹脂薄膜熱壓附並將處理表面的表面形狀轉印至樹脂薄膜的表面,藉由蝕刻將表面處理銅箔除去時,殘留的樹脂薄膜(以下,也稱為樹脂複製品)的表面(以下,也稱為轉印表面)的以ISO25178為準據測定到的偏度Ssk為 -0.6以下者。Surface treatment copper foil The copper foil of the present invention is a surface-treated copper foil. This surface-treated copper foil is a resin film remaining when the resin film is thermally pressed on the treated surface and the surface shape of the treated surface is transferred to the surface of the resin film, and the surface-treated copper foil is removed by etching (hereinafter, also referred to as Is a resin replica) the skewness Ssk of the surface (hereinafter also referred to as the transfer surface) measured according to ISO25178 is -Those below 0.6.

如同前述,隨著電路的更微細化的要求,擴大了對微細電路形成有利的SAP法的採用。這點,隨著電路圖案寬度變窄,容許的插入寬度也相對縮小。亦即,在從前的圖案寬度(例如30μm)容許的插入寬度,在更微細的電路圖案寬度(例如10μm)中,因為電路倒塌的風險提高等理由容易引起超出規格。As mentioned above, with the demand for more miniaturized circuits, the adoption of the SAP method that is advantageous for the formation of fine circuits has been expanded. In this regard, as the width of the circuit pattern becomes narrower, the allowable insertion width is relatively reduced. That is, the insertion width allowed in the former pattern width (for example, 30 μm) and the finer circuit pattern width (for example, 10 μm) are likely to cause the specification to be exceeded due to reasons such as increased risk of circuit collapse.

又,SAP法與MSAP法等其他工法相比在電路的微細化這點雖然是有利的,但關於插入抑制這點有不利的情形。該點,例如在MSAP法所致的電路形成中,如圖8A例示的,在樹脂基材112上,準備將因附載體銅箔而來的防鏽層114及電解銅層116依序層積的層積體110(工程(i)),以電解銅層116殘留的狀態形成無電解鍍銅118。接著,藉由乾薄膜以預定的圖案遮蔽,之後施予電鍍銅形成配線部分120(工程(ii))。因此,在MSAP法中,因為在樹脂基材112上殘留電解銅層116,在相鄰配線部分120、120間的不要部分的蝕刻除去工程中,必須將電解銅層116及無電解鍍銅118這2個層以蝕刻除去。因此,如圖8A的工程(iii)所示,得到的配線122容易產生電路細化。另一方面,在MSAP法中,因為如同上述未進行電解銅層116的完全除去,防鏽層114會存在樹脂基材112及配線122間,有助於防止防鏽層114發生插入。相對於此,在SAP法所致的電路形成中,如同圖8B例示的,在樹脂基材112上依序將防鏽層114及電解銅層116形成的層積體110的準備(工程(i))、電解銅層116的完全除去(工程(ii))、依序進行無電解鍍銅118的形成、乾薄膜所致的遮蔽、及電鍍銅所致的配線部分120的形成(工程(iii))。因此,在SAP法中,因為在樹脂基材112上未殘留電解銅層116,在相鄰配線部分120、120間的不要部分的蝕刻除去工程中,僅將無電解銅層118蝕刻除去即可,能夠抑制藉此得到的配線122的電路細化。此外,在SAP法中,因為使用非電解銅而是能將無電解銅選擇除去的蝕刻液,能夠更有效地抑制大部分以電解銅構成的配線122的細化。因此,關於電路的微細化,SAP法相較於MSAP法等其他工法較有利。但是,如圖8B的工程(iv)所示,藉由SAP法形成的配線122,因為最下部以無電解鍍銅118構成,使用能將無電解銅選擇除去的蝕刻液時,在配線122與樹脂基材112的界面容易產生插入124。這點,將在電解銅層116上設置防鏽層114的表面處理銅箔作為SAP用銅箔使用的情形也一樣,在SAP法中,因為將電解銅層116藉由蝕刻完全除去,該蝕刻時也將防鏽金屬蝕刻了(圖8B的工程(ii)參照)。此外,在圖8A及8B中,為了強調,將防鏽層114的厚度誇大表示,未必反映實際的層積體中的厚度之比。因此,在SAP法中,抑制在電路產生的插入並不容易。In addition, although the SAP method is advantageous in miniaturization of the circuit compared with other construction methods such as the MSAP method, there are disadvantages in terms of insertion suppression. At this point, for example, in the circuit formation by the MSAP method, as illustrated in FIG. 8A, on the resin substrate 112, a rust prevention layer 114 and an electrolytic copper layer 116 due to a copper foil with a carrier are prepared to be sequentially laminated The laminated body 110 (process (i)) forms electroless copper plating 118 with the electrolytic copper layer 116 remaining. Next, the dry film is masked in a predetermined pattern, and then copper plating is applied to form the wiring portion 120 (process (ii)). Therefore, in the MSAP method, since the electrolytic copper layer 116 remains on the resin substrate 112, it is necessary to remove the electrolytic copper layer 116 and the electroless copper plating 118 in the etching removal process of unnecessary portions between adjacent wiring portions 120, 120 These two layers are removed by etching. Therefore, as shown in step (iii) of FIG. 8A, the obtained wiring 122 is likely to be thinned. On the other hand, in the MSAP method, since the electrolytic copper layer 116 is not completely removed as described above, the rust prevention layer 114 exists between the resin substrate 112 and the wiring 122, which helps prevent the rust prevention layer 114 from being inserted. On the other hand, in the circuit formation by the SAP method, as illustrated in FIG. 8B, the preparation of the laminate 110 formed by sequentially forming the rust prevention layer 114 and the electrolytic copper layer 116 on the resin substrate 112 (process (i )), complete removal of the electrolytic copper layer 116 (process (ii)), the formation of the electroless copper plating 118, the shielding by dry film, and the formation of the wiring part 120 by copper electroplating (process (iii) )). Therefore, in the SAP method, since the electrolytic copper layer 116 is not left on the resin substrate 112, in the etching removal process of unnecessary portions between adjacent wiring portions 120, 120, only the electroless copper layer 118 may be etched and removed. It is possible to suppress the thinning of the circuit of the wiring 122 thus obtained. In addition, in the SAP method, since non-electrolytic copper is used as an etching solution that can selectively remove electroless copper, it is possible to more effectively suppress the thinning of the wiring 122 mainly composed of electrolytic copper. Therefore, regarding the miniaturization of the circuit, the SAP method is more advantageous than other construction methods such as the MSAP method. However, as shown in step (iv) of FIG. 8B, the wiring 122 formed by the SAP method is composed of electroless copper plating 118 at the bottom, and when an etching solution that can selectively remove electroless copper is used, the wiring 122 and The interface 124 of the resin substrate 112 is susceptible to insertion 124. In this regard, the surface treated copper foil provided with the anti-corrosion layer 114 on the electrolytic copper layer 116 is also used as a copper foil for SAP. In the SAP method, the electrolytic copper layer 116 is completely removed by etching. The anti-rust metal was also etched at this time (refer to the engineering (ii) of FIG. 8B). In addition, in FIGS. 8A and 8B, for emphasis, the thickness of the rust prevention layer 114 is exaggerated and does not necessarily reflect the actual thickness ratio in the laminate. Therefore, in the SAP method, it is not easy to suppress insertion that occurs in the circuit.

此點,藉由將本發明的表面處理銅箔用於SAP法,能夠在樹脂基材的表面賦予以ISO25178為準據測定的偏度Ssk為-0.6以下的特有的表面輪廓。藉此,在無電解鍍銅層的蝕刻工程中,將能夠有效抑制會產生於電路的插入的發生。雖藉由樹脂基材表面具有上述表面輪廓而能夠抑制在電路產生的插入的機制未必確定,但作為一個要因有以下者。亦即,形成電路的樹脂基材的表面(亦即樹脂複製品的轉印表面)的凸部,在SAP法的無電解鍍銅的蝕刻工程中,作為停止蝕刻液的浸入的防護壁作用。因此,該防護壁越厚越難發生插入。此點,若基於前述偏度Ssk的定義,如圖9A及9B所示,偏度Ssk小的樹脂複製品20(圖9A參照),與偏度Ssk大的樹脂複製品20(圖9B參照)相比,凸部20a的壁厚變厚(參照圖中附加圓印的位置)。因此,藉由使樹脂複製品的偏度Ssk設為-0.6以下充分小,能夠加厚上述防護壁,因此能有效地抑制在電路22產生的插入。In this regard, by using the surface-treated copper foil of the present invention for the SAP method, it is possible to impart a unique surface profile with a skewness Ssk of -0.6 or less measured on the surface of the resin base material according to ISO 25178. In this way, in the etching process of the electroless copper plating layer, it is possible to effectively suppress the occurrence of insertion that may occur in the circuit. Although the mechanism by which the surface contour of the resin base material has the above-mentioned surface profile to suppress insertion in the circuit is not necessarily determined, there are the following as a factor. That is, the convex portion on the surface of the resin substrate forming the circuit (that is, the transfer surface of the resin replica) acts as a protective wall to stop the infiltration of the etchant in the etching process of electroless copper plating by the SAP method. Therefore, the thicker the protective wall, the more difficult it is to insert. At this point, based on the definition of the aforementioned skewness Ssk, as shown in FIGS. 9A and 9B, the resin replica 20 with a small skewness Ssk (refer to FIG. 9A) and the resin replica 20 with a large skewness Ssk (refer to FIG. 9B) In contrast, the wall thickness of the convex portion 20a becomes thicker (refer to the position where a circle mark is added in the figure). Therefore, by making the skewness Ssk of the resin replica sufficiently smaller than -0.6 or less, the protective wall can be thickened, and thus the insertion in the circuit 22 can be effectively suppressed.

從上述觀點來看,本發明的表面處理銅箔較佳為用於SAP法所致的印刷配線板的製作。若以別的表現來看,本發明的表面處理銅箔用於在印刷配線板用的絕緣樹脂層轉印凹凸形狀較佳。From the above viewpoint, the surface-treated copper foil of the present invention is preferably used for the production of printed wiring boards by the SAP method. In other aspects, the surface-treated copper foil of the present invention is preferably used for transferring uneven shapes on the insulating resin layer for printed wiring boards.

本發明的表面處理銅箔,至少在一側具有處理表面。處理表面為施予任何表面處理的面,典型為粗糙化處理面。處理表面典型具備複數凸起(例如粗糙化粒子)而形成。不管如何,表面處理銅箔可以是在兩側具有處理表面(例如粗糙化處理面)者、僅在一側具有處理表面者也可以。在兩側具有處理表面時,用於SAP法時因為雷射照射側的面(與密著在絕緣樹脂的面相反側的面)也被表面處理,雷射吸收性提高的結果,也能夠使雷射穿孔性提升。The surface-treated copper foil of the present invention has a treated surface on at least one side. The treated surface is a surface subjected to any surface treatment, and is typically a roughened surface. The treated surface is typically formed with plural protrusions (for example, roughened particles). In any case, the surface-treated copper foil may have a treated surface (for example, a roughened surface) on both sides, or a treated surface on only one side. When there are treated surfaces on both sides, when used in the SAP method, the surface irradiated by the laser (the surface opposite to the surface adhered to the insulating resin) is also surface-treated. As a result of the improved laser absorption, it is also possible Laser perforation improved.

本發明的表面處理銅箔為在處理表面將樹脂薄膜熱壓附並將處理表面的表面形狀轉印至樹脂薄膜的表面,藉由蝕刻將表面處理銅箔除去時,殘留的樹脂薄膜的表面(亦即樹脂複製品的轉印表面)的偏度Ssk為-0.6以下、較佳為-1.7以上-0.6以下、更佳為-1.6以上-0.7以下、再更佳為-1.5以上-0.9以下、特佳為-1.5以上-1.1以下。若在上述較佳的範圍內,能夠更加抑制SAP法的蝕刻工程中的插入的產生,同時能夠將表面處理銅箔的處理表面的凸部抑制成不會過於細長的適度形狀,藉此能夠有效地抑制表面處理銅箔的凸部的折曲或脫落等造成的掉粉的發生。樹脂薄膜為熱硬化性樹脂薄膜較佳、預浸物的形態也可以。作為熱硬化性樹脂的例子,有環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂、聚醯亞胺樹脂等。熱壓附,若能夠將表面處理銅箔的處理表面的凹凸形狀在樹脂薄膜以可轉印的條件進行即可,沒有特別限定。例如,以壓力3.0MPa以上5.0MPa以下、溫度200℃以上240℃以下、60分間以上120分間以下的條件進行熱壓附較佳。The surface-treated copper foil of the present invention is to heat-press the resin film on the treated surface and transfer the surface shape of the treated surface to the surface of the resin film. When the surface-treated copper foil is removed by etching, the surface of the remaining resin film ( That is, the skewness Ssk of the resin replica) is -0.6 or less, preferably -1.7 or more -0.6 or less, more preferably -1.6 or more -0.7 or less, and even more preferably -1.5 or more -0.9 or less, Particularly good is -1.5 or more -1.1 or less. Within the above-mentioned preferable range, the occurrence of insertion in the etching process of the SAP method can be further suppressed, and at the same time, the convex portion of the treated surface of the surface-treated copper foil can be suppressed to an appropriate shape that is not too slender, which can effectively It is possible to suppress the occurrence of powder falling caused by bending or falling of the convex portion of the surface-treated copper foil. The resin film is preferably a thermosetting resin film, and the prepreg may be in the form. Examples of thermosetting resins include epoxy resins, cyanate resins, bismaleimide triazine resins (BT resins), polyphenylene ether resins, phenol resins, and polyimide resins. The hot press-bonding is not particularly limited as long as the irregularities of the treated surface of the surface-treated copper foil can be transferred to the resin film under transferable conditions. For example, hot pressing is preferably performed under the conditions of a pressure of 3.0 MPa or more and 5.0 MPa or less, a temperature of 200°C or more and 240°C or less, and between 60 minutes and 120 minutes.

本發明的表面處理銅箔,在上述蝕刻後殘留的樹脂薄膜的表面(亦即樹脂複製品的轉印表面),峰頂點的算術平均曲率Spc為5000mm-1 個以上13000mm-1 以下較佳、更佳為7000mm-1 個以上13000mm-1 以下、再佳為9000mm-1 個以上13000mm-1 以下、特佳為10000mm-1 個以上13000mm-1 以下。若在上述較佳的範圍內,能夠將表面處理銅箔的處理表面的凸部抑制成不會過於細長的適度形狀,能夠有效地抑制表面處理銅箔的凸部的折曲或脫落等造成的掉粉的發生,同時更加抑制SAP法的蝕刻工程中的插入的發生。作為能夠抑制插入的發生的一個要因,推測為以下原因。亦即,若基於前述峰頂點的算術平均曲率Spc的定義,如圖9A及圖9B所示,峰頂點的算術平均曲率Spc小的樹脂複製品20(圖9A參照),與峰頂點的算術平均曲率Spc大的樹脂複製品20(圖9B參照)相比,凸部20a的頂點平坦。其結果,作為插入防護壁作用的凸部20a的壁厚變厚了。Surface treated copper foil of the present invention, the surface of the resin film after the etching residue (i.e., resin transfer surface replicas), an arithmetic mean peak point Spc curvature less than 5000mm -1 13000mm -1 or less more preferred, more preferably more than 7000mm -1 13000mm -1 or less, more then 9000mm -1 a good 13000mm -1 or less, and particularly preferably more than 10000mm -1 13000mm -1 or less. If it is within the above-mentioned preferred range, the convex portion of the surface of the surface-treated copper foil can be suppressed to an appropriate shape that is not too slender, and the bending or falling off of the convex portion of the surface-treated copper foil can be effectively suppressed The occurrence of powder loss also suppresses the occurrence of insertion in the etching process of the SAP method. As a factor that can suppress the occurrence of insertion, the following causes are presumed. That is, based on the definition of the arithmetic mean curvature Spc of the peak apex, as shown in FIGS. 9A and 9B, the resin replica 20 (refer to FIG. 9A) having a small arithmetic mean curvature Spc of the peak apex and the arithmetic mean of the peak apex Compared with the resin replica 20 having a large curvature Spc (refer to FIG. 9B ), the vertex of the convex portion 20a is flat. As a result, the thickness of the convex portion 20a acting as an insertion protection wall becomes thicker.

本發明的表面處理銅箔,在上述蝕刻後殘留的樹脂薄膜的表面(亦即樹脂複製品的轉印表面),峰的頂點密度Spd為1.13×106 mm-2 個以上1.50×106 mm-2 以下較佳、更佳為1.13×106 mm-2 個以上1.40×106 mm-2 以下、再佳為1.14×106 mm-2 個以上1.30×106 mm-2 以下、特佳為1.15×106 mm-2 個以上1.20×106 mm-2 以下。若在上述較佳的範圍內,能夠將表面處理銅箔的處理表面的凸部抑制成適度的數有效地抑制掉粉的發生,同時更加抑制SAP法的蝕刻工程中的插入的發生。亦即,如同前述,因為電路的插入在樹脂複製品的凸部被停止,凸部以高頻度存在的樹脂複製品,能夠抑制插入的進行。此點,若基於前述峰的頂點密度Spd的定義,如圖9A及圖9B所示,峰的頂點密度Spd大的樹脂複製品20(圖9A參照),與峰的頂點密度Spd小的樹脂複製品20(圖9B參照)相比,凸部20a以高頻度存在。因此,即便發生插入時,能夠使該進行在早的階段停止。The surface-treated copper foil of the present invention has a peak apex density Spd of 1.13×10 6 mm -2 or more 1.50×10 6 mm on the surface of the resin film remaining after the etching (that is, the transfer surface of the resin replica) -2 or less is better, more preferably 1.13×10 6 mm -2 or more 1.40×10 6 mm -2 or less, more preferably 1.14×10 6 mm -2 or more 1.30×10 6 mm -2 or less, especially good It is 1.15×10 6 mm -2 or more 1.20×10 6 mm -2 or less. Within the above-mentioned preferable range, the convex portions of the treated surface of the surface-treated copper foil can be suppressed to an appropriate number to effectively suppress the occurrence of dusting, and the occurrence of insertion in the etching process of the SAP method can be further suppressed. That is, as described above, because the insertion of the circuit is stopped at the convex portion of the resin replica, the resin replica where the convex portion exists at a high frequency can suppress the progress of the insertion. At this point, based on the definition of the peak apex density Spd, as shown in FIGS. 9A and 9B, the resin replica 20 (see FIG. 9A) having a large peak apex density Spd is copied with the resin having a small peak apex density Spd Compared with the product 20 (refer to FIG. 9B), the convex portion 20a exists at a high frequency. Therefore, even when the insertion occurs, the progress can be stopped at an early stage.

本發明的表面處理銅箔,上述蝕刻後殘留的樹脂薄膜的表面(亦即樹脂複製品的轉印表面),核心部的實體體積Vmc(mL/m2 )相對於極點高度Sxp(μm)之比即Vmc/Sxp為0.39以上0.44以下、較佳為0.39以上0.43以下、再佳為0.39以上0.42以下、特佳為0.39以上0.41以下、最佳為0.39以上0.40以下。若在上述較佳的範圍內,能夠將表面處理銅箔的處理表面的凸部抑制成不會過於細長的適度形狀,能夠有效地抑制表面處理銅箔的凸部的折曲或脫落等造成的掉粉的發生,同時更加抑制SAP法的蝕刻工程中的插入的發生。此外,也能使基材與電路的密著力增大。亦即,如同前述,樹脂複製品的凸部作為停止蝕刻液的浸入的防護壁作用後,若基於前述核心部的實體體積Vmc的定義,核心部的實體體積Vmc若越大則樹脂複製品的凸部也變大,能夠更加抑制插入。另一方面,若基於前述核心部的實體體積Vmc及極點高度Sxp的定義,如圖10A及10B所示,核心部的實體體積Vmc因為也相依於樹脂複製品20的凸部20a高度,藉由比較除以與凸部20a高度關連的參數即極點高度Sxp的Vmc/Sxp,能夠將凸部20a的高度作為一致的換算值評價凸部20a的大小。又,藉由加大Vmc/Sxp (例如0.39以上),因為咬入電路22的樹脂複製品20的凸部20a面積也變大(亦即被電路22包圍而保持的樹脂量變多),因為錨定效應的提升,基材與電路的密著力也增大。In the surface-treated copper foil of the present invention, the surface of the resin film remaining after the etching (that is, the transfer surface of the resin replica), the physical volume of the core part Vmc (mL/m 2 ) relative to the pole height Sxp (μm) The ratio Vmc/Sxp is 0.39 or more and 0.44 or less, preferably 0.39 or more and 0.43 or less, still more preferably 0.39 or more and 0.42 or less, particularly preferably 0.39 or more and 0.41 or less, and most preferably 0.39 or more and 0.40 or less. If it is within the above-mentioned preferred range, the convex portion of the surface of the surface-treated copper foil can be suppressed to an appropriate shape that is not too slender, and the bending or falling off of the convex portion of the surface-treated copper foil can be effectively suppressed The occurrence of powder loss also suppresses the occurrence of insertion in the etching process of the SAP method. In addition, the adhesion between the substrate and the circuit can also be increased. That is, as described above, after the convex portion of the resin replica acts as a protective wall to stop the penetration of the etchant, if the solid volume Vmc of the core portion is larger based on the definition of the solid volume Vmc of the core portion, the resin replica The convex portion also becomes larger, and insertion can be more suppressed. On the other hand, if based on the aforementioned definition of the physical volume Vmc of the core portion and the pole height Sxp, as shown in FIGS. 10A and 10B, the physical volume Vmc of the core portion also depends on the height of the convex portion 20a of the resin replica 20, by By comparing Vmc/Sxp, which is the pole height Sxp, which is a parameter related to the height of the convex portion 20a, the size of the convex portion 20a can be evaluated by using the height of the convex portion 20a as a consistent conversion value. Also, by increasing Vmc/Sxp (for example, 0.39 or more), the area of the convex portion 20a of the resin replica 20 that bites into the circuit 22 also becomes larger (that is, the amount of resin that is surrounded and held by the circuit 22 increases) because of the anchor As the fixed effect increases, the adhesion between the substrate and the circuit also increases.

表面處理銅箔的製造方法 雖說明本發明的表面處理銅箔的較佳的製造方法的一例,但本發明的表面處理銅箔不限於以下說明的方法,只要能夠在樹脂薄膜表面賦予上述表面輪廓,藉由任何方法製造都可以。Method for manufacturing surface-treated copper foil Although an example of a preferred method for manufacturing the surface-treated copper foil of the present invention is described, the surface-treated copper foil of the present invention is not limited to the method described below, and can be manufactured by any method as long as the above-mentioned surface profile can be given to the surface of the resin film can.

(1)銅箔的準備 作為使用於表面處理銅箔的製造的銅箔,能使用電解銅箔及壓延銅箔兩者。銅箔的厚度雖沒有特別限定,但0.1μm以上18μm以下較佳、更佳為0.5μm以上10μm以下、再來佳為0.5μm以上7μm以下、特佳為0.5μm以上5μm以下、最佳為0.5μm以上3μm以下。銅箔以附載體銅箔的形態準備時,銅箔為藉由無電解鍍銅法及電解鍍銅法等濕式等成膜法、濺鍍及化學蒸鍍等乾式成膜法、或組合該等方法所形成者即可。(1) Preparation of copper foil As the copper foil used for the manufacture of the surface-treated copper foil, both electrolytic copper foil and rolled copper foil can be used. Although the thickness of the copper foil is not particularly limited, it is preferably 0.1 μm or more and 18 μm or less, more preferably 0.5 μm or more and 10 μm or less, more preferably 0.5 μm or more and 7 μm or less, particularly preferably 0.5 μm or more and 5 μm or less, and most preferably 0.5 μm or more and 3μm or less. When the copper foil is prepared in the form of a copper foil with a carrier, the copper foil is formed by a wet film forming method such as electroless copper plating and electrolytic copper plating, a dry film forming method such as sputtering and chemical vapor deposition, or a combination of these It can be formed by other methods.

(2)表面處理(粗糙化處理) 利用銅粒子將銅箔的至少一表面粗糙化。該粗糙化藉由使用粗糙化處理用銅電解溶液的電解進行。該電解經由2階段或3階段的鍍膜工程進行較佳、更佳為經由3階段的鍍膜工程進行。第1階段的鍍膜工程中,使用包含銅濃度5g/L以上20g/L以下、硫酸濃度30g/L以上200g/L以下、氯濃度20mg/L以上100mg/L以下、及9-苯基吖啶(9PA)濃度20mg/L以上80mg/L以下的硫酸銅溶液,以液溫20℃以上40℃以下、電流密度5A/dm2 以上25A/dm2 以下、時間2秒以上10秒以下的鍍膜條件進行電沉積較佳。該第1階段的鍍膜工程雖可以使用2個槽合計進行2次,但以合計1次結束較佳。在第2階段的鍍膜工程中,使用包含銅濃度65g/L以上80g/L以下及硫酸濃度200g/L以上280g/L以下的硫酸銅溶液,以液溫45℃以上55℃以下、電流密度1A/dm2 以上10A/dm2 以下、時間2秒以上25秒以下的鍍膜條件進行電沉積較佳。在第3階段的鍍膜工程中,使用包含銅濃度10g/L以上20g/L以下、硫酸濃度30g/L以上130g/L以下、氯濃度20mg/L以上100mg/L以下、及9PA濃度100mg/L以上200mg/L以下的硫酸銅溶液,以液溫20℃以上40℃以下、電流密度10A/dm2 以上40A/dm2 以下、時間0.3秒以上1.0秒以下的鍍膜條件進行電沉積較佳。特別是第1階段的鍍膜工程使用9PA等添加劑等進行較佳,第1階段的鍍膜工程中的電量Q1 與第2階段的鍍膜工程中的電量Q2 的合計電量(Q1 +Q2 )設定成100C/dm2 以下較佳。又,從處理的均勻性及作業性的點來看,第1階段的鍍膜工程中的正極及負極間的距離為45mm以上90mm以下較佳、更佳為50mm以上80mm以下。(2) Surface treatment (roughening treatment) At least one surface of the copper foil is roughened using copper particles. This roughening is performed by electrolysis using a copper electrolytic solution for roughening treatment. The electrolysis is preferably performed through a two-stage or three-stage coating process, and more preferably through a three-stage coating process. In the first-stage coating process, copper concentration of 5 g/L or more and 20 g/L or less, sulfuric acid concentration of 30 g/L or more and 200 g/L or less, chlorine concentration of 20 mg/L or more and 100 mg/L or less, and 9-phenylacridine (9PA) Copper sulfate solution with a concentration of 20 mg/L or more and 80 mg/L or less, with a coating temperature of 20°C or more and 40°C or less, current density of 5A/dm 2 or more and 25A/dm 2 or less, and a time of 2 seconds or more and 10 seconds or less It is better to perform electrodeposition. Although this first-stage coating process can be performed twice using a total of two tanks, it is preferably completed once in total. In the second-stage coating process, a copper sulfate solution containing a copper concentration of 65 g/L or more and 80 g/L or less and a sulfuric acid concentration of 200 g/L or more and 280 g/L or less is used at a liquid temperature of 45°C or higher and 55°C or lower, and a current density of 1A /dm 2 or more and 10A/dm 2 or less, and a plating time of 2 to 25 seconds. In the third-stage coating process, copper concentration of 10 g/L or more and 20 g/L or less, sulfuric acid concentration of 30 g/L or more and 130 g/L or less, chlorine concentration of 20 mg/L or more and 100 mg/L or less, and 9PA concentration of 100 mg/L are used. A copper sulfate solution of 200 mg/L or less is preferably electrodeposited under plating conditions of a liquid temperature of 20° C. or more and 40° C. or less, a current density of 10 A/dm 2 or more and 40 A/dm 2 or less, and a time of 0.3 seconds or more and 1.0 second or less. In particular the first stage coating project using additives like 9PA Preferably, the first stage coating project in a total charge amount Q 2 (Q 1 + Q 2) and the second stage coating project in the amount Q It is preferably set to 100 C/dm 2 or less. In addition, from the viewpoint of uniformity of processing and workability, the distance between the positive electrode and the negative electrode in the coating process in the first stage is preferably 45 mm or more and 90 mm or less, and more preferably 50 mm or more and 80 mm or less.

(3)防鏽處理 適其需要,也可以對粗糙化處理後的銅箔施以防鏽處理。防鏽處理較佳為利用含有鋅的鍍膜處理。利用鋅的鍍膜處理可以是鋅鍍膜處理及鋅合金鍍膜處理之任一種,鋅合金鍍膜處理特別是較佳為鋅-鎳合金處理。鋅-鎳合金處理可以至少是含有Ni及Zn的鍍膜處理,也可以含有Sn、Cr、Co等其他元素。於鋅-鎳合金鍍膜的Ni/Zn附著比較佳為質量比1.2以上10以下、更佳為2以上7以下,再更佳為2.7以上4以下。此外,防鏽處理較佳更含有鉻酸鹽處理,該鉻酸鹽處理為使用鋅的鍍膜處理後,在含有鋅的鍍膜表面進行較佳。藉此可以更加提升防鏽性。特別是較佳的防鏽處理為在進行鋅-鎳合金鍍膜處理後的鉻酸鹽處理之組合。(3) Anti-rust treatment If necessary, the copper foil after the roughening treatment may be subjected to rust prevention treatment. The rust prevention treatment is preferably a plating treatment containing zinc. The coating treatment using zinc may be any of zinc coating treatment and zinc alloy coating treatment. The zinc alloy coating treatment is particularly preferably a zinc-nickel alloy treatment. The zinc-nickel alloy treatment may be at least a plating treatment containing Ni and Zn, or may contain other elements such as Sn, Cr, and Co. The Ni/Zn adhesion to the zinc-nickel alloy plating film is preferably a mass ratio of 1.2 or more and 10 or less, more preferably 2 or more and 7 or less, and even more preferably 2.7 or more and 4 or less. In addition, the rust prevention treatment preferably further contains a chromate treatment, which is preferably performed on the surface of the zinc-containing plating film after the zinc-containing plating film treatment. This can further improve the rust resistance. In particular, the preferred anti-rust treatment is a combination of chromate treatment after zinc-nickel alloy coating treatment.

(4)矽烷偶合劑處理 適其需要,也可以在銅箔施予矽烷偶合劑處理,形成矽烷偶合劑層。藉此可提升耐濕性、耐藥性及與黏接劑等的密著性。矽烷偶合劑層可以將矽烷偶合劑適度地稀釋並塗佈,將其乾燥而形成。作為矽烷偶合劑之例,有4-縮水甘油醚三甲、3- 環氧丙氧基丙基三甲氧基矽烷等的環氧官能性矽烷偶合劑、或3-氨丙基三乙氧基矽烷、N-2(氨乙基)3-氨丙基三乙氧基矽烷、N-3-(4-(3-氨丙氧基)丁氧基)丙基-3-氨基丙基三乙氧基矽烷、N-苯基-3-氨丙基三乙氧基矽烷等的氨官能性矽烷偶合劑、或3-氨丙基三乙氧基矽烷等的巰基官能性矽烷偶合劑或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等的烯烴官能性矽烷偶合劑、或3-甲基丙烯醯氧基丙基三甲氧基矽烷等的丙烯酸官能性矽烷偶合劑、或咪唑矽烷等的咪唑官能性矽烷偶合劑、或三嗪矽烷等的三嗪官能性矽烷偶合劑等。(4) Silane coupling agent treatment If necessary, a silane coupling agent may be applied to the copper foil to form a silane coupling agent layer. This can improve moisture resistance, chemical resistance and adhesion to adhesives. The silane coupling agent layer can be formed by appropriately diluting and coating the silane coupling agent and drying it. Examples of silane coupling agents include epoxy functional silane coupling agents such as 4-glycidyl ether trimethyl, 3-glycidoxypropyltrimethoxysilane, or 3-aminopropyltriethoxysilane, N-2(aminoethyl)3-aminopropyltriethoxysilane, N-3-(4-(3-aminopropoxy)butoxy)propyl-3-aminopropyltriethoxy Amino functional silane coupling agent such as silane, N-phenyl-3-aminopropyl triethoxy silane, or mercapto functional silane coupling agent such as 3-aminopropyl triethoxy silane, or vinyl trimethoxy Alkene functional silane coupling agent such as silane, vinylphenyl trimethoxy silane, etc., acrylic functional silane coupling agent such as 3-methacryl propyl propyl trimethoxy silane, or imidazole such as imidazole silane Functional silane coupling agent, triazine functional silane coupling agent such as triazine silane, etc.

附載體銅箔 本發明的表面處理銅箔能夠以附載體銅箔的形態提供。此時,附載體銅箔具備載體、設於該載體上的剝離層、在該剝離層上將處理表面(典型為粗糙化處理面)作為外側設置的本發明的表面處理銅箔而成。此外,附載體銅箔除了使用本發明的表面處理銅箔以外,也能採用公知的層結構。Copper foil with carrier The surface-treated copper foil of the present invention can be provided in the form of a copper foil with a carrier. At this time, the copper foil with a carrier includes a carrier, a peeling layer provided on the carrier, and the surface-treated copper foil of the present invention provided with a treated surface (typically a roughened surface) on the peeled layer as an outer side. Moreover, in addition to using the surface-treated copper foil of this invention, the copper foil with a carrier can also use a well-known layer structure.

載體為用來支持表面處理銅箔並使其處理性提升的層(典型為箔)。作為載體之例,有鋁箔、銅箔、表面以銅等塗佈金屬的樹脂薄膜及玻璃板等、較佳為銅箔。銅箔不管是壓延銅箔或電解銅箔都可以。載體的厚度典型為200μm以下、較佳為12μm以上35μm以下。The carrier is a layer (typically a foil) for supporting the surface-treated copper foil and improving its handleability. Examples of the carrier include aluminum foil, copper foil, a metal-coated resin film coated with copper or the like on the surface, a glass plate, etc., preferably copper foil. The copper foil can be either rolled copper foil or electrolytic copper foil. The thickness of the carrier is typically 200 μm or less, preferably 12 μm or more and 35 μm or less.

載體的剝離層側的面,具有0.5μm以上1.5μm以下的十點表面粗糙度Rz較佳、更佳為0.6μm以上1.0μm以下。Rz能以JIS B 0601-1994為準據決定。藉由將這種十點表面粗糙度Rz事先賦予至載體的剝離層側的面,在其之上隔介著剝離層製作的本發明的表面處理銅箔能夠容易賦予所期望的表面輪廓。The surface on the release layer side of the carrier preferably has a ten-point surface roughness Rz of 0.5 μm or more and 1.5 μm or less, more preferably 0.6 μm or more and 1.0 μm or less. Rz can be determined based on JIS B 0601-1994. By giving this ten-point surface roughness Rz to the surface of the carrier on the peeling layer side in advance, the surface-treated copper foil of the present invention produced thereon via the peeling layer can easily give the desired surface profile.

剝離層為具有使載體箔的剝離強度減弱、擔保該強度的穩定性、且抑制在高溫的壓印成形時載體與銅箔間容易引起的相互擴散的機能的層。剝離層一般形成於載體箔的一面,但也可以形成於兩面。剝離層不管是有機剝離層或無機剝離層都可以。作為使用於有機剝離層的有機成份之例有氮含有有機化合物、硫含有有機化合物、羧酸等。作為氮含有有機化合物例如有三唑化合物、咪唑化合物等,其中從三唑化合物的剝離性穩定性來看為較佳。作為三唑化合物之例有1,2,3-苯並三唑、羧基苯並三唑、N',N'-雙(苯並三唑基甲基)脲、1H-1,2,4-三唑、及3-氨基-1H-1,2,4-三唑等。作為含有硫的有機化合物例如有巰基苯、硫氰尿酸、2-苯並咪唑硫醇等。羧酸之例為有單羧酸、二羧酸等。另一方面,作為使用於無機剝離層的無機成份之例有Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn、鉻酸鹽處理膜等。此外,剝離層的形成藉由在載體的至少一表面接觸剝離層成份含有溶液,使剝離層成分固定於載體箔的表面等進行即可。載體的向剝離層成份含有溶液的接觸,藉由向剝離層成份含有溶液的浸漬、剝離層成份含有溶液的噴霧、剝離層成份含有溶液的流下等進行即可。又,剝離層成份的向載體表面的固定,藉由剝離層成份含有溶液的吸附及乾燥、剝離層成份含有溶液中的剝離層成份的電沉積等進行即可。剝離層的厚度典型為1nm以上1μm以下、較佳為5nm以上500nm以下。The peeling layer is a layer having a function of weakening the peeling strength of the carrier foil, guaranteeing the stability of the strength, and suppressing mutual diffusion between the carrier and the copper foil that is easily caused during high-temperature embossing. The release layer is generally formed on one side of the carrier foil, but may be formed on both sides. The peeling layer may be an organic peeling layer or an inorganic peeling layer. Examples of organic components used in the organic peeling layer include nitrogen-containing organic compounds, sulfur-containing organic compounds, and carboxylic acids. Examples of nitrogen-containing organic compounds include triazole compounds, imidazole compounds, and the like. Among them, the triazole compounds are preferred from the standpoint of peelability stability. Examples of triazole compounds include 1,2,3-benzotriazole, carboxybenzotriazole, N',N'-bis(benzotriazolylmethyl)urea, 1H-1,2,4- Triazole, and 3-amino-1H-1,2,4-triazole, etc. Examples of sulfur-containing organic compounds include mercaptobenzene, thiocyanuric acid, and 2-benzimidazole mercaptan. Examples of carboxylic acids include monocarboxylic acids and dicarboxylic acids. On the other hand, examples of the inorganic components used in the inorganic peeling layer include Ni, Mo, Co, Cr, Fe, Ti, W, P, Zn, and chromate-treated films. In addition, the formation of the peeling layer may be performed by contacting the peeling layer component-containing solution on at least one surface of the carrier, and fixing the peeling layer component to the surface of the carrier foil. The contact of the carrier to the peeling layer component-containing solution may be performed by immersion into the peeling layer component-containing solution, spraying of the peeling layer component-containing solution, or flow-down of the peeling layer component-containing solution. In addition, the fixation of the peeling layer component to the surface of the carrier may be performed by adsorption and drying of the peeling layer component-containing solution, and the electrodeposition of the peeling layer component-containing solution of the peeling layer component. The thickness of the peeling layer is typically 1 nm or more and 1 μm or less, preferably 5 nm or more and 500 nm or less.

作為表面處理銅箔,使用上述本發明的表面處理銅箔。本發明的粗糙化處理雖施予使用銅粒子的粗糙化者,作為順序首先在剝離層的表面將銅層作為銅箔形成,之後至少進行粗糙化即可。關於粗糙化的詳細如同前述。此外,銅箔為了活用作為附載體銅箔的優點,以超薄銅箔的形態構成者較佳。作為超薄銅箔的較佳厚度為0.1μm以上7μm以下、更佳為0.5μm以上5μm以下、再佳為0.5μm以上3μm以下。As the surface-treated copper foil, the above-described surface-treated copper foil of the present invention is used. Although the roughening treatment of the present invention is applied to a roughener using copper particles, the copper layer is first formed on the surface of the peeling layer as a copper foil in order, and then at least roughening may be performed. The details of the roughening are as described above. In addition, in order to make use of the advantages of the copper foil as a copper foil with a carrier, it is preferable that it is configured in the form of an ultra-thin copper foil. The preferred thickness of the ultra-thin copper foil is 0.1 μm or more and 7 μm or less, more preferably 0.5 μm or more and 5 μm or less, and still more preferably 0.5 μm or more and 3 μm or less.

在剝離層與載體及/或銅箔之間設置其他機能層也可以。作為這種其他的機能層之例可以例如是補助金屬層。補助金屬層較佳為由鎳及/或鈷所組成。補助金屬層的厚度較佳為0.001μm以上3μm以下。It is also possible to provide another functional layer between the peeling layer and the carrier and/or copper foil. As an example of such another functional layer, for example, an auxiliary metal layer may be used. The auxiliary metal layer is preferably composed of nickel and/or cobalt. The thickness of the auxiliary metal layer is preferably 0.001 μm or more and 3 μm or less.

覆銅層積板 本發明的表面處理銅箔至附載體銅箔較佳為用於印刷配線板用覆銅層積板的製作。亦即,根據本發明較佳的態樣,提供具備上述表面處理銅箔或上述附載體銅箔的覆銅層積板。藉由使用本發明的表面處理銅箔至附載體銅箔,能夠提供特別適用SAP法的覆銅層積板。該覆銅層積板具備本發明的表面處理銅箔、在該表面處理銅箔的粗糙化處理面密著設置的樹脂層而成、或者具備本發明的附載體銅箔、在該附載體銅箔的表面處理銅箔的粗糙化處理面密著設置的樹脂層而成。表面處理銅箔或附載體銅箔設置在樹脂層的單面也可以、設在兩面也可以。樹脂層包含樹脂、較佳為絕緣性樹脂而成。樹脂層較佳為預浸物及/或樹脂片。預浸物為合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等基材浸於合成樹脂的複合材料之總稱。作為絕緣性樹脂較佳的例子有環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂等。此外,作為構成樹脂片的絕緣性樹脂的例子有環氧樹脂、聚醯亞胺樹脂、聚酯纖維樹脂等的絕緣樹脂。此外,從提升樹脂層的絕緣性等觀點來看,也可以含有由二氧化矽、氧化鋁等各種無機粒子所構成的填料粒子等。樹脂層的厚度雖沒有特別限定,但較佳為1μm以上1000μm以下、更佳為2μm以上400μm以下、再更佳為3μm以上200μm以下。樹脂層也可以由複數的層所構成。預浸物及/或樹脂片等的樹脂層也可以隔介著預先在表面處理銅箔的粗糙化處理表面塗佈的底塗層樹脂層於表面處理銅箔至附載體銅箔設置也可以。Copper clad laminate The surface-treated copper foil to the carrier-attached copper foil of the present invention are preferably used for the production of copper-clad laminates for printed wiring boards. That is, according to a preferred aspect of the present invention, there is provided a copper-clad laminate having the above-mentioned surface-treated copper foil or the above-mentioned carrier-attached copper foil. By using the surface-treated copper foil of the present invention to a copper foil with a carrier, a copper-clad laminate that is particularly suitable for the SAP method can be provided. The copper-clad laminate is provided with the surface-treated copper foil of the present invention and a resin layer densely provided on the roughened surface of the surface-treated copper foil, or with the copper foil with carrier of the present invention, and the copper with carrier Surface treatment of the foil The roughened surface of the copper foil is made of densely arranged resin layers. The surface-treated copper foil or the copper foil with carrier may be provided on one side or both sides of the resin layer. The resin layer contains resin, preferably insulating resin. The resin layer is preferably a prepreg and/or resin sheet. The prepreg is a general term for composite materials in which synthetic resin plates, glass plates, glass woven fabrics, glass non-woven fabrics, paper and other substrates are impregnated with synthetic resin. Preferred examples of the insulating resin include epoxy resin, cyanate resin, bismaleimide triazine resin (BT resin), polyphenylene ether resin, and phenol resin. In addition, examples of the insulating resin constituting the resin sheet include insulating resins such as epoxy resin, polyimide resin, and polyester fiber resin. In addition, from the viewpoint of improving the insulation of the resin layer and the like, filler particles made of various inorganic particles such as silica and alumina may be contained. Although the thickness of the resin layer is not particularly limited, it is preferably 1 μm or more and 1000 μm or less, more preferably 2 μm or more and 400 μm or less, and still more preferably 3 μm or more and 200 μm or less. The resin layer may be composed of a plurality of layers. The resin layer such as a prepreg and/or a resin sheet may be provided between the surface-treated copper foil and the carrier-attached copper foil via an undercoat resin layer previously coated on the roughened surface of the surface-treated copper foil.

印刷配線板 本發明的表面處理銅箔至附載體銅箔用於印刷配線板的製作較佳、特佳為藉由半加成法(SAP)的印刷配線板的製作。亦即,根據本發明的較佳態樣,提供一種利用前述表面處理銅箔或上述附載體銅箔製造印刷配線板的印刷配線板的製造方法、或者利用前述表面處理銅箔或上述覆銅層積板得到的印刷配線板。藉由使用本發明的表面處理銅箔至附載體銅箔,能夠將上述表面輪廓賦予至層積體,在印刷配線板製造的一工程即蝕刻工程中,能夠有效地抑制插入。本態樣的印刷配線板包含層積樹脂層與銅層的層結構而成。SAP法的情形中,本發明的表面處理銅箔因為在圖1的工程(c)中被除去,藉由SAP法製作的印刷配線板已經不包含本發明的表面處理銅箔,僅有從表面處理銅箔的粗糙化處理面轉印的表面輪廓殘留。此外,關於樹脂層與關於覆銅層積板的上述相同。不管如何,印刷配線板可以採用公知的層構造。作為有關印刷配線板的具體例,有作為在預浸物的單面或兩面使本發明的表面處理銅箔黏接並硬化附載體銅箔的層積體後形成電路的單面或兩面印刷配線板、或將其等多層化的多層印刷配線板等。此外,作為其他的具體例,也可以是在樹脂薄膜上形成本發明的表面處理銅箔及附載體銅箔而形成電路的軟性印刷電路配線板、COF、TAB賿帶等。再來作為其他具體例,在本發明的表面處理銅箔至附載體銅箔形成塗佈上述樹脂層的附樹脂銅箔(RCC),將樹脂層作為絕緣黏接材層層積於上述印刷基板後,將表面處理銅箔作為配線層的全部或一部分利用改良半加成(MSAP)法、減法製程法等的手法形成電路的層積配線板、或除去表面處理銅箔以半加成(SAP)法形成電路的層積配線板、向半導體積體電路上交互反複進行附樹脂銅箔的層積及電路形成的在晶圓上直接層積等。作為更具發展性的具體例,有將上述附樹脂銅箔於基材上層積形成電路的天線元件、藉由黏接劑層在玻璃或樹脂膜上層積形成圖案的面板顯示用電子材料或窗玻璃用電子材料、在本發明的表面處理銅箔上塗佈導電性黏接劑的電磁波屏蔽薄膜等。特別是本發明的表面處理銅箔至附載體銅箔適於SAP法。例如,藉由SAP法形成電路時可採用圖1及2所示的那種構成。Printed wiring board The surface-treated copper foil of the present invention to the carrier-attached copper foil are preferably used for the production of printed wiring boards, and particularly preferably produced by a semi-additive method (SAP). That is, according to a preferred aspect of the present invention, there is provided a method for manufacturing a printed wiring board using the aforementioned surface-treated copper foil or the aforementioned copper foil with a carrier, or the aforementioned surface-treated copper foil or the aforementioned copper-clad layer The printed wiring board obtained from the board. By using the surface-treated copper foil of the present invention to a copper foil with a carrier, the above-mentioned surface profile can be given to the laminate, and insertion can be effectively suppressed in an etching process which is a process of printed wiring board manufacturing. The printed wiring board of this aspect includes a layer structure in which a resin layer and a copper layer are laminated. In the case of the SAP method, the surface-treated copper foil of the present invention is removed in the process (c) of FIG. 1, and the printed wiring board produced by the SAP method does not already contain the surface-treated copper foil of the present invention, only from the surface The surface profile transferred from the roughened surface of the treated copper foil remains. In addition, the resin layer is the same as described above for the copper-clad laminate. In any case, the printed wiring board may adopt a well-known layer structure. As a specific example of the printed wiring board, there is a single-sided or double-sided printed wiring that forms a circuit after bonding the surface-treated copper foil of the present invention on one or both sides of the prepreg and hardening the laminate of the copper foil with carrier Board, or a multilayer printed wiring board in which it is multilayered. In addition, as other specific examples, a flexible printed circuit wiring board, a COF, a TAB tape, or the like formed by forming a surface-treated copper foil and a copper foil with a carrier of the present invention on a resin film to form a circuit. As another specific example, a resin-coated copper foil (RCC) coated with the resin layer is formed on the surface-treated copper foil of the present invention to a copper foil with a carrier, and the resin layer is laminated on the printed circuit board as an insulating adhesive layer After that, the surface-treated copper foil is used as all or part of the wiring layer to form a circuit-layered wiring board by a modified semi-additive (MSAP) method, a subtractive process method, or the like, or the surface-treated copper foil is removed for semi-additive (SAP ) Method to form a circuit's laminated wiring board, alternately repeating the lamination of resin-coated copper foil onto the semiconductor integrated circuit, direct lamination of the circuit formation on the wafer, etc. As a more specific example of development, there are an antenna element in which a copper foil with resin is laminated on a substrate to form a circuit, and an electronic material or window for panel display formed by laminating a pattern on a glass or resin film with an adhesive layer An electronic material for glass, an electromagnetic wave shielding film coated with a conductive adhesive on the surface-treated copper foil of the present invention, and the like. In particular, the surface-treated copper foil of the present invention to the copper foil with carrier is suitable for the SAP method. For example, when the circuit is formed by the SAP method, the configuration shown in FIGS. 1 and 2 can be adopted.

樹脂基材 根據本發明較佳的態樣,提供一種樹脂基材,至少一表面以ISO25178為準據測定的偏度Ssk為-0.6以下。該樹脂基材相當於轉印本發明的表面處理銅箔的表面形狀的樹脂複製品。因此,轉印上述表面處理銅箔的表面形狀的樹脂複製品的較佳態樣(偏度Ssk、峰頂點的算術平均曲率Spc、峰的頂點密度Spd、及核心部的實體體積Vmc相對於極點高度Sxp之比Vmc/Sxp的各參數),也能套用於本態樣的樹脂基材。樹脂基材包含樹脂、較佳為絕緣性樹脂而成。樹脂基材較佳為預浸物及/或樹脂片。預浸物為合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等基材浸於合成樹脂的複合材料之總稱。作為絕緣性樹脂較佳的例子有環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂等。此外,作為構成樹脂基材的絕緣性樹脂之例,有環氧樹脂、聚醯亞胺樹脂、聚酯纖維樹脂等的絕緣樹脂。又,從對樹脂基材提升絕緣性等的觀點來看,也可以含有由二氧化矽、氧化鋁等各種無機粒子構成的填料粒子等。樹脂基材的厚度沒有特別限定,但較佳為1μm以上1000μm以下、更佳為2μm以上400μm以下、再更佳為3μm以上200μm以下。樹脂基材由複數的層構成即可。本發明的樹脂基材能夠作為SAP法的印刷配線板的製作中的出發材料及中間製品較佳地使用。 [實施例]Resin substrate According to a preferred aspect of the present invention, a resin substrate is provided, and the skewness Ssk measured on at least one surface according to ISO 25178 is -0.6 or less. This resin substrate corresponds to a resin replica that transfers the surface shape of the surface-treated copper foil of the present invention. Therefore, the preferred form of the resin replica that transfers the surface shape of the surface-treated copper foil (skewness Ssk, arithmetic mean curvature Spc of the peak apex, peak apex density Spd, and core volume Vmc relative to the pole The parameters of the height Sxp ratio Vmc/Sxp) can also be applied to the resin substrate of this aspect. The resin base material includes a resin, preferably an insulating resin. The resin substrate is preferably a prepreg and/or resin sheet. The prepreg is a general term for composite materials in which synthetic resin plates, glass plates, glass woven fabrics, glass non-woven fabrics, paper and other substrates are impregnated with synthetic resin. Preferred examples of the insulating resin include epoxy resin, cyanate resin, bismaleimide triazine resin (BT resin), polyphenylene ether resin, and phenol resin. In addition, examples of the insulating resin constituting the resin base material include insulating resins such as epoxy resin, polyimide resin, and polyester fiber resin. In addition, from the viewpoint of improving the insulating properties of the resin substrate, etc., filler particles made of various inorganic particles such as silica and alumina may be contained. The thickness of the resin substrate is not particularly limited, but it is preferably 1 μm or more and 1000 μm or less, more preferably 2 μm or more and 400 μm or less, and still more preferably 3 μm or more and 200 μm or less. The resin base material may be composed of a plurality of layers. The resin substrate of the present invention can be preferably used as a starting material and an intermediate product in the production of a printed wiring board by the SAP method. [Example]

將本發明藉由以下之例更具體地說明。The present invention will be described more specifically by the following examples.

例1~6 附載體銅箔及樹脂複製品的製作及評價以以下的方式進行。Example 1~6 The production and evaluation of the copper foil with carrier and the resin replica were performed in the following manner.

(1)載體的製作 作為陰極準備將表面以#2000的研磨布研磨的鈦製電極。又,作為陽極準備DSA(尺寸穩定性陽極)。使用該等電極,浸漬於銅濃度80g/L、硫酸濃度260g/L的硫酸銅溶液,以溶液溫度45℃、電流密度55A/dm2 電解,將厚度18μm的電解銅箔作為載體得到。(1) Preparation of carrier As a cathode, a titanium electrode with a surface polished with a #2000 polishing cloth was prepared. As an anode, DSA (Dimensional Stability Anode) was prepared. These electrodes were immersed in a copper sulfate solution with a copper concentration of 80 g/L and a sulfuric acid concentration of 260 g/L, electrolyzed at a solution temperature of 45° C. and a current density of 55 A/dm 2 , and obtained by using an electrolytic copper foil with a thickness of 18 μm as a carrier.

(2)剝離層的形成 將酸洗處理後的載體的電極面側於CBTA(羧基苯並三唑)濃度1g/L、硫酸濃度150g/L、及銅濃度10g/L的CBTA水溶液中,以液溫30℃進行30秒間的浸漬,使CBTA的成份吸附於載體的電極面。藉此,在載體的電極面的表面將CBTA層作為有機剝離層形成。(2) Formation of peeling layer The electrode surface side of the carrier after pickling treatment was carried out in a CBTA aqueous solution with a CBTA (carboxybenzotriazole) concentration of 1 g/L, a sulfuric acid concentration of 150 g/L, and a copper concentration of 10 g/L at a liquid temperature of 30° C. for 30 seconds The impregnation of CBTA makes the components of CBTA adsorb to the electrode surface of the carrier. By this, the CBTA layer is formed as an organic peeling layer on the surface of the electrode surface of the carrier.

(3)補助金屬層的形成 將形成有機剝離層的載體浸漬於利用硫酸鎳製作的鎳濃度20g/L的溶液中,以液溫45℃、PH3、電流密度5A/dm2 的條件,使厚度0.001μm相當的附著量的鎳附著於有機剝離層上。藉此,在有機剝離層上將鎳層作為補助金屬層形成。(3) Formation of auxiliary metal layer The carrier forming the organic peeling layer is immersed in a nickel concentration solution made of nickel sulfate at a concentration of 20 g/L, and the thickness is adjusted under the conditions of a liquid temperature of 45° C., pH 3, and a current density of 5 A/dm 2 . Nickel with an equivalent amount of 0.001 μm adhered to the organic peeling layer. With this, a nickel layer is formed as an auxiliary metal layer on the organic peeling layer.

(4)超薄銅箔形成 將形成補助金屬層的載體,浸漬於銅濃度60g/L、硫酸濃度200g/L的硫酸銅溶液中,以溶液溫度50℃、電流密度5A/dm2 以上30A/dm2 以下電解,形成厚度1.2μm的超薄銅箔於補助金屬層上。(4) The ultra-thin copper foil is formed into a carrier that will form the auxiliary metal layer, immersed in a copper sulfate solution with a copper concentration of 60 g/L and a sulfuric acid concentration of 200 g/L, at a solution temperature of 50° C. and a current density of 5 A/dm 2 or more and 30 A/ Electrolysis of dm 2 or less forms an ultra-thin copper foil with a thickness of 1.2 μm on the auxiliary metal layer.

(5)粗糙化處理 對上述超薄銅箔的析出面進行粗糙化處理。該粗糙化處理,第1階段的鍍膜分2次進行。各階段的鍍膜工程中,使用具有表1所示的銅濃度、硫酸濃度、氯濃度及9-苯基吖啶(9PA)濃度的硫酸銅溶液,以表1所示的液溫、表2所示的電流密度及時間進行電沉積。第1階段的鍍膜工程中的正極及負極間的距離為50mm以上80mm以下。藉此製作從例1至例6的6種粗糙化處理銅箔。(5) Roughening treatment The precipitation surface of the ultra-thin copper foil is roughened. This roughening treatment is performed twice in the first-stage plating. In each stage of the coating process, a copper sulfate solution having the copper concentration, sulfuric acid concentration, chlorine concentration, and 9-phenylacridine (9PA) concentration shown in Table 1 was used. The liquid temperature shown in Table 1 and Table 2 were used. The current density and time shown are electrodeposited. The distance between the positive electrode and the negative electrode in the first-stage coating process is 50 mm or more and 80 mm or less. In this way, six types of roughened copper foils from Examples 1 to 6 were produced.

Figure 02_image001
Figure 02_image001

Figure 02_image003
Figure 02_image003

(6)防鏽處理 在得到的附載體銅箔的粗糙化處理層之表面,進行由鋅-鎳合金鍍膜處理及鉻酸鹽處理所構成的防鏽處理。首先,利用鋅濃度0.2g/L、鎳濃度2g/L及吡咯啉酸鉀濃度300g/L的電解液,以液溫40℃、電流密度0.5A/dm2 的條件,在粗糙化處理層及載體的表面進行鋅-鎳合金鍍膜處理。接著,利用鉻酸濃度1g/L的水溶液,以pH11、液溫25℃、電流密度1A/dm2 的條件,在進行鋅-鎳合金鍍膜處理的表面進行鉻酸鹽處理。(6) Anti-rust treatment The surface of the roughened layer of the obtained copper foil with carrier was subjected to anti-rust treatment consisting of zinc-nickel alloy plating treatment and chromate treatment. First, using an electrolyte solution with a zinc concentration of 0.2 g/L, a nickel concentration of 2 g/L, and a potassium pyrroline concentration of 300 g/L, at a temperature of 40° C. and a current density of 0.5 A/dm 2 , the roughened layer and The surface of the carrier is coated with zinc-nickel alloy. Next, the surface of the zinc-nickel alloy plating treatment was subjected to chromate treatment using an aqueous solution having a chromic acid concentration of 1 g/L under the conditions of pH 11, liquid temperature of 25° C., and current density of 1 A/dm 2 .

(7)矽烷偶合劑處理 使包含3-氨丙基三乙氧基矽烷3g/L的水溶液吸附於附載體銅箔的銅箔側的表面,藉由電熱器將水分蒸發,進行矽烷偶合劑處理。此時,矽烷偶合劑處理在載體側未進行。(7) Silane coupling agent treatment An aqueous solution containing 3 g/L of 3-aminopropyltriethoxysilane was adsorbed on the surface of the copper foil side of the copper foil with carrier, the water was evaporated by an electric heater, and a silane coupling agent treatment was performed. At this time, the silane coupling agent treatment was not performed on the carrier side.

(8)覆銅層積板的製作 利用附載體銅箔製作覆銅層積板。首先,在內層基板的表面,作為樹脂薄膜隔介著BT樹脂預浸物(三菱瓦斯化學股份公司製GHPL-830NS,厚0.1mm)層積附載體銅箔的超薄銅箔,以壓力4.0MPa、220度進行90分間熱壓附後,剝離載體箔,製作覆銅層積板。(8) Manufacture of copper clad laminate Use copper foil with carrier to make copper clad laminate. First, on the surface of the inner substrate, an ultra-thin copper foil with a carrier copper foil was laminated as a resin film with a BT resin prepreg (GHPL-830NS manufactured by Mitsubishi Gas Chemical Co., Ltd., 0.1 mm thick) at a pressure of 4.0 After hot pressing at MPa and 220 degrees for 90 minutes, the carrier foil was peeled off to produce a copper-clad laminate.

(9)樹脂複製品的製作 將覆銅層積板的表面的銅箔全部以硫酸/過氧化氫系蝕刻液除去,得到樹脂複製品。(9) Production of resin replicas The copper foil on the surface of the copper-clad laminate was completely removed with a sulfuric acid/hydrogen peroxide-based etching solution to obtain a resin replica.

(10)樹脂複製品的表面輪廓測定 利用雷射顯微鏡(股份公司基恩斯製,VK-X100)的表面粗糙度解析,將樹脂複製品的轉印面(轉印粗糙化處理面的表面曲線的面)的測定以ISO25178為準據進行。具體來說,將樹脂複製品的轉印面的面積57074.677μm2 的區域的表面輪廓藉由上述雷射顯微鏡以對物透鏡倍率50倍測定。對得到的樹脂複製品的轉印面的表面輪廓將面傾斜補正(自動)作為前處理進行後,藉由雷射法解析,算出各參數(核心部的實體體積Vmc相對於偏度Ssk、峰頂點的算術平均曲率Spc、峰的頂點密度Spd、極點高度Sxp之比Vmc/Sxp)。此時,不使用S濾波器及L濾波器的任一者量測數值。將以上操作就各例進行3次,將平均值作為各例中的各參數之值。結果顯示於表3。(10) Measurement of the surface profile of the resin replicas The surface of the resin replica (transferred to the surface curve of the roughened surface) is analyzed by surface roughness analysis of a laser microscope (manufactured by Keynes Co., Ltd., VK-X100) The measurement is based on ISO25178. Specifically, the surface profile of the area of 57074.677 μm 2 of the transfer surface of the resin replica was measured by the above-mentioned laser microscope at an objective lens magnification of 50 times. The surface contour of the transfer surface of the obtained resin replica was corrected by surface inclination (automatic) as a pre-processing, and analyzed by the laser method to calculate each parameter (the physical volume of the core part Vmc relative to the skewness Ssk, peak apex The arithmetic mean curvature Spc, the peak apex density Spd, and the pole height Sxp ratio Vmc/Sxp). At this time, neither the S filter nor the L filter is used to measure the value. The above operation was performed three times for each case, and the average value was used as the value of each parameter in each case. The results are shown in Table 3.

(11)SAP評價用層積體的製作 對樹脂複製品,進行脫脂、Pd系觸媒賦予、及活性化處理。在經活性化的表面進行無電解鍍銅(厚度:1μm),得到在SAP法中貼合乾薄膜前的層積體(以下,稱為SAP評價用層積體)。該等工程依照SAP法的公知條件進行。(11) Production of laminates for SAP evaluation The resin replica is subjected to degreasing, Pd-based catalyst application, and activation treatment. Electroless copper plating (thickness: 1 μm) was performed on the activated surface to obtain a laminate (hereinafter referred to as a laminate for SAP evaluation) before laminating a dry film in the SAP method. Such works are carried out in accordance with the known conditions of the SAP law.

(12)SAP評價用層積體的評價 關於上述得到的SAP評價用價,將各種特性的評價如以下進行。(12) Evaluation of laminates for SAP evaluation Regarding the SAP evaluation price obtained above, the evaluation of various characteristics was performed as follows.

<插入評價> 在SAP評價用層積體的表面貼附乾薄膜,進行曝光、乾薄膜除去、及電解鍍膜等,形成電路寬度22μm、高度22μm、長度150μm的電路(在該階段,各電路的下部為藉由無電解鍍銅層電連接的狀態)。將得到的電路以蝕刻液(JCU股份公司製,SAC-700W3C)處理,將在電路間殘留的無電解鍍銅層溶解去除,使各電路間絕緣。此時的蝕刻量,預先測定銅箔的蝕刻速度,再藉由所謂的適量蝕刻再蝕刻至相當於4μm相當,以所謂的過蝕刻的條件進行。蝕刻處理之後,將電路水洗並乾燥。利用光學顯微鏡觀察電路的剖面,求出插入量。具體來說,如圖11所示,測定在樹脂複製品20上形成的電路22的上部寬度x(μm)及下部寬度y(μm),將該差(x-y)作為插入量(μm)。關於各例以2視野進行測定,將平均值作為各例的插入量。結果顯示於表3。<insert evaluation> A dry film is attached to the surface of the SAP evaluation laminate, and exposure, dry film removal, electrolytic plating, etc. are performed to form a circuit with a circuit width of 22 μm, a height of 22 μm, and a length of 150 μm (at this stage, the lower part of each circuit is State of electrical connection of electroless copper plating). The obtained circuit was treated with an etching solution (manufactured by JCU Corporation, SAC-700W3C), and the electroless copper plating layer remaining between the circuits was dissolved and removed to insulate each circuit. At this time, the etching rate of the copper foil was measured in advance, and then etched again by a so-called appropriate amount of etching to the equivalent of 4 μm, under the condition of so-called over-etching. After the etching process, the circuit is washed with water and dried. Observe the cross section of the circuit with an optical microscope to determine the insertion amount. Specifically, as shown in FIG. 11, the upper width x (μm) and the lower width y (μm) of the circuit 22 formed on the resin replica 20 are measured, and the difference (x-y) is taken as the insertion amount (μm). For each case, the measurement was performed with two fields of view, and the average value was used as the insertion amount of each case. The results are shown in Table 3.

<鍍膜電路密著性(剝離強度)> 在SAP評價用層積體貼合乾薄膜,進行曝光及顯像。在被經顯像的乾薄膜遮蔽的層積體藉由圖案鍍膜使銅層析出後,將乾薄膜剝離。將以蝕刻液(JCU股份公司製,SAC-700W3C)表露出的無電解鍍銅除去,作成高度20μm、寬度10mm的剝離強度測定用樣本。以JIS C 6481 (1996)為準據,測定從評價用樣本將銅層剝離時的剝離強度。結果顯示於表3。<Adhesion of coated circuit (peel strength)> A dry film was attached to the laminate for SAP evaluation, and exposure and development were performed. After the laminated body covered by the developed dry film was subjected to copper plating by pattern plating, the dry film was peeled off. The electroless copper plating exposed by the etching liquid (made by JCU Corporation, SAC-700W3C) was removed, and the sample for peeling strength measurement of 20 micrometers in height and 10 mm in width was produced. Based on JIS C 6481 (1996), the peel strength when peeling the copper layer from the sample for evaluation was measured. The results are shown in Table 3.

Figure 02_image005
Figure 02_image005

從表3可得知,例5不管Vmc/Sxp的值有多大,剝離強度都沒有明顯上升。其理由應該是「掉粉」為一個要因。亦即,若發生掉粉,已不會得到錨定效應會看到剝離強度降低的傾向,但Vmc/Sxp若過大則會引起掉粉。例5因為發生輕微的掉粉,而止於微低的的剝離強度。As can be seen from Table 3, in Example 5, no matter how large the value of Vmc/Sxp, the peel strength did not increase significantly. The reason should be "dropping powder" as a factor. That is, if dusting occurs, the anchoring effect will no longer be obtained, and the peel strength will tend to decrease, but if Vmc/Sxp is too large, it will cause powdering. Example 5 stopped at a slightly low peel strength because of slight powder loss.

10:超薄銅箔 11a:下地基材 11b:下層電路 11:絕緣樹脂基板 12:預浸物 13:底塗層 14:通孔 15:無電解鍍銅 16:乾薄膜 17:電鍍銅 17a:配線部分 18:配線 112:樹脂基材 114:防鏽層 116:電解銅層 110:層積體 118:無電解鍍銅 120:配線部分 122:配線 124:插入 20:樹脂複製品 20a:凸部 22:電路10: Ultra-thin copper foil 11a: Underground substrate 11b: Lower layer circuit 11: Insulating resin substrate 12: prepreg 13: Undercoat 14: through hole 15: Electroless copper plating 16: Dry film 17: Copper electroplating 17a: wiring part 18: Wiring 112: resin substrate 114: Anti-rust layer 116: electrolytic copper layer 110: laminate 118: Electroless copper plating 120: wiring part 122: Wiring 124: Insert 20: resin replica 20a: convex part 22: Circuit

[圖1] 用來說明SAP法的工程流程圖,表示前半工程(從工程(a)到工程(d))的圖。 [圖2] 用來說明SAP法的工程流程圖,表示後半工程(從工程(e)到工程(h))的圖。 [圖3A] 用來說明以ISO25178為準據決定的偏度Ssk的圖,表示Ssk<0時的表面及其高度分佈的圖。 [圖3B] 用來說明以ISO25178為準據決定的偏度Ssk的圖,表示Ssk>0時的表面及其高度分佈的圖。 [圖4] 用來說明以ISO25178為準據決定的負荷曲線及負荷面積率的圖。 [圖5] 用來說明分離以ISO25178為準據決定的突出峰部與核心部的負荷面積率Smr1、及分離突出谷部與核心部的負荷面積率Smr2的圖。 [圖6] 用來說明以ISO25178為準據決定的極點高度Sxp的圖。 [圖7] 用來說明以ISO25178為準據決定的核心部的實體體積Vmc的圖。 [圖8A] 表示MSAP法所致的電路形成的一例的工程流程圖,用來說明產生電路細化的圖。 [圖8B] 表示SAP法所致的電路形成的一例的工程流程圖,用來說明產生插入的圖。 [圖9A] 表示在Ssk及Spc小,且Spd及Vmc/Sxp大的樹脂複製品上形成電路的層積體中的插入發生前後的狀態的剖面示意圖。 [圖9B] 表示在Ssk及Spc大,且Spd及Vmc/Sxp小的樹脂複製品上形成電路的層積體中的插入發生前後的狀態的剖面示意圖。 [圖10A] 表示將圖9A的層積體的樹脂複製品的凸部抽出後,進行凸部的高度補正的圖。 [圖10B] 表示將圖9B的層積體的樹脂複製品的凸部抽出後,進行凸部的高度補正的圖。 [圖11] 用來說明插入量的測定方法的圖。[Figure 1] A flow chart for explaining the SAP method, showing the first half of the project (from project (a) to project (d)). [Figure 2] A flow chart for explaining the SAP method, showing the second half of the project (from project (e) to project (h)). [FIG. 3A] A diagram for explaining the skewness Ssk determined based on ISO25178, and a diagram showing the surface and its height distribution when Ssk<0. [FIG. 3B] A diagram for explaining the skewness Ssk determined based on ISO25178, and a diagram showing the surface and its height distribution when Ssk>0. [Figure 4] A diagram for explaining the load curve and load area ratio determined based on ISO25178. [Fig. 5] A diagram for explaining the separation of the load area ratio Smr1 of the protruding peak portion and the core portion determined based on ISO25178 and the separation of the load area ratio Smr2 of the protruding valley portion and the core portion. [Figure 6] A diagram for explaining the pole height Sxp determined based on ISO25178. [Fig. 7] A diagram for explaining the physical volume Vmc of the core determined according to ISO 25178. [FIG. 8A] An engineering flow chart showing an example of circuit formation by the MSAP method, and is used to explain a detailed diagram of the generation circuit. [FIG. 8B] An engineering flow chart showing an example of circuit formation by the SAP method, and is used to explain the generation of insertion diagrams. [Fig. 9A] Fig. 9A is a schematic cross-sectional view showing a state before and after insertion occurs in a laminate in which a circuit is formed on a resin replica where Ssk and Spc are small and Spd and Vmc/Sxp are large. [FIG. 9B] A schematic cross-sectional view showing the state before and after insertion occurs in a laminate in which a circuit is formed on a resin replica in which Ssk and Spc are large, and Spd and Vmc/Sxp are small. [FIG. 10A] A diagram showing that the height of the convex portion is corrected after the convex portion of the resin replica of the laminate of FIG. 9A is extracted. [FIG. 10B] A diagram showing that the height of the convex portion is corrected after the convex portion of the resin replica of the laminate of FIG. 9B is extracted. [Fig. 11] A diagram for explaining the method of measuring the insertion amount.

Claims (11)

一種表面處理銅箔,至少在一側具有處理表面; 在前述處理表面將樹脂薄膜熱壓附並將前述處理表面的表面形狀轉印至前述樹脂薄膜的表面,藉由蝕刻將前述表面處理銅箔除去時,殘留的前述樹脂薄膜的前述表面中的以ISO25178為準據測定的偏度Ssk為-0.6以下。A surface-treated copper foil having a treated surface on at least one side; When the resin film is thermally pressed on the treated surface and the surface shape of the treated surface is transferred to the surface of the resin film, and the surface-treated copper foil is removed by etching, among the remaining surfaces of the resin film The skewness Ssk measured under ISO25178 is the criterion -0.6 or less. 如請求項1記載的表面處理銅箔,其中,前述偏度Ssk為-1.7以上-0.6以下。The surface-treated copper foil according to claim 1, wherein the skewness Ssk is -1.7 or more and -0.6 or less. 如請求項1記載的表面處理銅箔,其中,前述蝕刻後殘留的前述樹脂薄膜的前述表面,以ISO25178為準據測定的峰頂點的算術平均曲率Spc為5000mm-1 以上13000mm-1 以下。Item 1 A surface treated copper foil described in the request, wherein the surface of the resin film remaining after the etch, according to ISO25178 whichever peak point Spc arithmetic mean curvature of 5000mm -1 measured less than 13000mm -1. 如請求項1記載的表面處理銅箔,其中,前述蝕刻後殘留的前述樹脂薄膜的前述表面,以ISO25178為準據測定的峰的頂點密度Spd為1.13×106 mm-2 以上1.50×106 mm-2 以下。The surface-treated copper foil according to claim 1, wherein the peak density Spd of the peak measured on the basis of ISO25178 of the surface of the resin film remaining after the etching is 1.13×10 6 mm -2 or more 1.50×10 6 mm -2 or less. 如請求項1記載的表面處理銅箔,其中,前述蝕刻後殘留的前述樹脂薄膜的前述表面,以ISO25178為準據測定的核心部的實體體積Vmc相對於以ISO25178為準據測定的極點高度Sxp之比即Vmc/Sxp為0.39以上0.44以下。The surface-treated copper foil according to claim 1, wherein the solid volume Vmc of the core portion measured in accordance with ISO25178 is relative to the pole height Sxp measured in accordance with ISO25178 based on the surface of the resin film remaining after the etching The ratio, Vmc/Sxp, is 0.39 or more and 0.44 or less. 如請求項1記載的表面處理銅箔,用於在印刷配線板用的絕緣樹脂層轉印凹凸形狀。The surface-treated copper foil as described in claim 1 is used to transfer the uneven shape to the insulating resin layer for printed wiring boards. 如請求項1記載的表面處理銅箔,用於半加成法(SAP)所致的印刷配線板的製作。The surface-treated copper foil as described in claim 1 is used for the production of printed wiring boards by the semi-additive method (SAP). 一種附載體銅箔,具備:載體、設於該載體上的剝離層、及在該剝離層上將前述處理表面作為外側設置的請求項1~7中任一項記載的表面處理銅箔。A copper foil with a carrier, comprising: a carrier, a peeling layer provided on the carrier, and the surface-treated copper foil according to any one of claims 1 to 7 provided with the aforementioned treated surface on the peeling layer. 一種覆銅層積板,具備:如請求項1~7中任一項記載的表面處理銅箔或請求項8記載的附載體銅箔。A copper-clad laminate comprising: the surface-treated copper foil according to any one of claims 1 to 7 or the copper foil with a carrier according to claim 8. 一種印刷配線板,係利用如請求項1~7中任一項記載的表面處理銅箔或請求項8記載的附載體銅箔得到。A printed wiring board obtained by using the surface-treated copper foil according to any one of claims 1 to 7 or the copper foil with a carrier according to claim 8. 一種印刷配線板的製造方法,係利用如請求項1~7中任一項記載的表面處理銅箔或請求項8記載的附載體銅箔來製造印刷配線板。A method of manufacturing a printed wiring board is to use a surface-treated copper foil as described in any one of claims 1 to 7 or a copper foil with a carrier as described in claim 8 to manufacture a printed wiring board.
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