TW202018892A - 積體晶片及形成積體晶片的方法 - Google Patents
積體晶片及形成積體晶片的方法 Download PDFInfo
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- TW202018892A TW202018892A TW108133205A TW108133205A TW202018892A TW 202018892 A TW202018892 A TW 202018892A TW 108133205 A TW108133205 A TW 108133205A TW 108133205 A TW108133205 A TW 108133205A TW 202018892 A TW202018892 A TW 202018892A
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- layer
- passivation layer
- etch stop
- conductive
- disposed
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Abstract
在一些實施例中,提供一種積體晶片。積體晶片包括設置在半導體基底之上的金屬化結構,其中金屬化結構包括設置在層間介電結構中的內連結構。鈍化層設置在金屬化結構之上,其中內連結構的上表面至少部分地設置在鈍化層的相對的內側壁之間。側壁間隔件沿著鈍化層的相對的內側壁設置,其中側壁間隔件具有經圓化的側壁。導電結構設置在鈍化層、側壁間隔件的經圓化的側壁及內連結構的上表面上。
Description
現代積體晶片包括排列在半導體基底上/內的數百萬個或數十億個半導體裝置。所述半導體裝置連接到包括內連結構的金屬化結構。所述內連結構包括將半導體裝置彼此電連接的多個導電特徵(例如,導線、通孔及觸點)。通常,所述內連結構終止在位於金屬化結構之上的接墊處。所述接墊可包括金屬層,所述金屬層提供從積體晶片到外部元件(例如,積體晶片封裝體)的導電連接。
將參考圖式闡述本公開,在圖式中自始至終使用相似的參考編號來指代相似的元件,且在圖式中所說明的結構未必按比例繪製。應瞭解,此詳細說明及對應的圖絕不限制本公開的範圍,且所述詳細說明及各圖僅提供幾個實例來說明可展示本發明概念的一些方式。
本公開提供許多不同的實施例或實例以實施本公開的不同特徵。下文闡述元件及排列的具體實例以使本公開簡明。當然,這些僅是實例,並不旨在進行限制。舉例來說,在以下說明中,第一特徵形成在第二特徵之上或形成在第二特徵上可包括第一特徵與第二特徵形成為直接接觸的實施例,且還可包括額外特徵可形成在第一特徵與第二特徵之間使得第一特徵與第二特徵不可直接接觸的實施例。另外,本公開可在各種實例中重複使用參考編號及/或字母。此重複是出於簡明及清晰目的,本質上並不規定所述的各種實施例及/或配置之間的關係。
此外,為便於說明起見,本文中可使用例如“在…之下(beneath)”、“低於(below)”、“下部(lower)”、“在…上方(above)”、“上部(upper)”等空間相對用語來闡述一個元件或特徵與另外的元件或特徵之間的關係,如圖中所說明。除了圖中所繪示的定向之外,所述空間相對用語還旨在囊括器件在使用或操作中的不同定向。可以其他方式對設備進行定向(旋轉90度或處於其他定向),且同樣地可對本文中所使用的空間相對描述符加以相應地解釋。
一些積體晶片(integrated chip,IC)包括設置在半導體基底上/內的多個半導體裝置(例如,金屬氧化物半導體場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET))。金屬化結構設置在半導體基底之上。所述金屬化結構包括將所述多個半導體裝置電耦合在一起的內連結構(例如,銅內連線)。通常,鈍化層設置在所述金屬化結構之上。多個接墊設置在金屬化層之上且延伸穿過鈍化層以在內連結構與輸入/輸出(Input/Output,I/O)結構(例如,打線接合(wire bond)、焊料凸塊(solder bump)等)之間提供導電介面(conductive interface)。
上述積體晶片所面臨的一個挑戰是接墊頸縮(及/或重佈線層頸縮)。接墊頸縮(及/或重佈線層頸縮)是接墊(bond pad)(及/或重佈線層(redistribution layer,RDL))的厚度沿著鈍化層的側壁減小。舉例來說,接墊的第一部分沿著鈍化層的側壁設置且穿過鈍化層而延伸到接墊的第二部分,所述第二部分設置在鈍化層的側壁之間且在內連結構的一部分上。由於接墊的第一部分具有大的厚度變化(例如,接墊的第一部分的厚度在接近鈍化層的側壁的頂部處比在接近鈍化層的側壁的底部處大),因此所述接墊的所述第一部分可發生接墊頸縮。由於接墊頸縮,對接墊的後續處理(例如,用以剝離罩幕層的清洗製程)可能會侵蝕內連結構,因此會導致內連結構損壞。因此,接墊頸縮可給積體晶片的性能帶來負面影響(例如,功耗增加、使用壽命縮短等)。
在各種實施例中,本公開涉及一種積體晶片(IC)。所述積體晶片包括設置在半導體基底之上的金屬化結構。所述金屬化結構包括設置在層間介電(interlayer dielectric,ILD)結構中的內連結構。鈍化層設置在金屬化結構上,其中內連結構的上表面至少部分地設置在鈍化層的相對的內側壁之間。具有經圓化的側壁的側壁間隔件(sidewall spacer)沿著鈍化層的相對的內側壁設置。導電結構(例如,接墊或重佈線層)設置在鈍化層、側壁間隔件的經圓化的側壁及內連結構的上表面上。
由於側壁間隔件具有經圓化的側壁且沿著鈍化層的側壁設置,因此沿著經圓化的側壁延伸的導電結構的一部分的厚度變化可得以減小。因此,側壁間隔件可減小接墊頸縮(及/或重佈線層頸縮)。因此,側壁間隔件可防止接墊頸縮(及/或重佈線層頸縮)所導致的內連結構損壞,借此提高積體晶片的性能(例如,功耗減少、使用壽命延長等)。
圖1A到圖1B示出積體電路(integrated circuit)100的一些實施例的各種視圖,積體電路100具有減小接墊頸縮的側壁間隔件122。圖1A示出圖1B所示積體電路100的一些實施例的剖視圖。圖1B示出圖1A所示積體電路100的一些實施例的俯視圖,其中接墊124(參見下文)的材料被移除,因此以虛線示出接墊124的周界(perimeter)124p。
如圖1A到圖1B中所示,積體電路100包括半導體基底102。在一些實施例中,半導體基底102包括任何類型的半導體主體(例如,單晶矽/互補金屬氧化物半導體(Complementary Metal Oxide Semiconductor,CMOS)塊體、矽鍺(SiGe)、絕緣體上有矽(SOI)等)。
半導體裝置104設置在半導體基底102上/內。在一些實施例中,半導體裝置104可以是電晶體(例如,金屬氧化物半導體場效電晶體(MOSFET))。在這些實施例中,半導體裝置104包括設置在半導體基底102中的一對源極/汲極區106。在其他此類實施例中,閘極介電質108設置在半導體基底102上、源極/汲極區106之間。在其他此類實施例中,閘極電極110設置在閘極介電質108上。在另外的一些實施例中,半導體裝置104可以是高電壓MOSFET。
金屬化結構112設置在半導體基底102及半導體裝置104之上。在一些實施例中,金屬化結構112包括設置在層間介電(interlayer dielectric,ILD)結構116中的內連結構118,層間介電結構116具有一個或多個層間介電層。內連結構118包括多個導電元件(例如,金屬線、金屬通孔、金屬觸點等),所述多個導電元件被配置成將半導體裝置104電耦合到積體電路100的其他半導體裝置(未示出)。在其他實施例中,內連結構118的最上部導電元件119(例如,最上部金屬線)具有與層間介電結構116的上表面實質上共面的上表面。在另外的一些實施例中,最上部導電元件119的上表面可與內連結構118的上表面對應。
在一些實施例中,內連結構118可包含例如銅、鎢、鋁、一些其他導電材料或前述材料的組合。在其他實施例中,層間介電結構116可包含以下中的一者或多者:例如,低介電常數(low-k)介電層(例如,介電常數小於約3.9的介電質)、超低介電常數(ultra-low-k)介電層、氧化物(例如,二氧化矽(SiO2
))、一些其他介電材料或前述材料的組合。
鈍化層120設置在金屬化結構112之上。在一些實施例中,鈍化層120設置在層間介電結構116及最上部導電元件119上。在其他實施例中,鈍化層120包括從鈍化層120的上表面延伸到金屬化結構112的多個第一內側壁120s。在另外的一些實施例中,最上部導電元件119的上表面的至少一部分設置在第一內側壁120s之間。
在一些實施例中,第一內側壁120s可實質上垂直。在其他實施例中,鈍化層120可具有實質上平坦的上表面。在另外的一些實施例中,鈍化層120可包含例如氧化物(例如,SiO2
)、氮化物(例如,氮化矽(SiN))、氮氧化物(例如,氮氧化矽(SiOX
NY
))、一些其他介電材料或前述材料的組合。應瞭解,在一些實施例中,鈍化層120可包括一個或多個介電層。
側壁間隔件122設置在金屬化結構112之上且設置成沿著第一內側壁120s。在一些實施例中,側壁間隔件122設置在最上部導電元件119的上表面上。在其他實施例中,側壁間隔件122可設置在層間介電結構116的上表面上。在其他實施例中,側壁間隔件122具有多個經圓化的側壁122s。在另外的一些實施例中,側壁間隔件122的相對的經圓化的側壁122s面向彼此。
在其他實施例中,側壁間隔件122可包含例如氧化物(例如,SiO2
)、氮化物(例如,SiN)、氮氧化物(例如,SiOX
NY
)、一些其他介電材料或前述材料的組合。在另外的一些實施例中,側壁間隔件122與鈍化層120可包含不同的材料。在其他實施例中,側壁間隔件122與鈍化層120可包含相同的材料。
接墊124設置在金屬化結構112、側壁間隔件122及鈍化層120之上。在一些實施例中,接墊124設置在最上部導電元件119、側壁間隔件122的經圓化的側壁122s及鈍化層120的上表面上。其他實施例中,接墊124電耦合到內連結構118,且因此電耦合到半導體裝置104。在另外的一些實施例中,接墊124為鈍化層120、側壁間隔件122及內連結構118共形地加襯(conformally lining)。
在一些實施例中,接墊124可包含例如鋁、銅、鋁銅、一些其他導電材料或前述材料的組合。在其他實施例中,接墊124與內連結構118包含不同的導電材料。舉例來說,接墊124可包含鋁,且內連結構118可包含銅。在另外的一些實施例中,接墊124可包含內連結構118並不包含的導電材料。
由於側壁間隔件122沿著第一內側壁120s設置且由於側壁間隔件122具有經圓化的側壁122s,因此沿著側壁間隔件122的經圓化的側壁122s延伸的接墊124的一部分的厚度變化可得以減小。因此,側壁間隔件122可減小接墊頸縮。因此,側壁間隔件122可防止接墊頸縮所導致的內連結構118損壞,借此提高積體電路100的性能(例如,功耗減少、使用壽命延長等)。
圖2A到圖2B示出積體電路100的一些實施例的各種視圖,所述積體電路100具有減小重佈線層(RDL)頸縮的側壁間隔件122。圖2A示出圖2B所示積體電路100的一些實施例的剖視圖。圖2B示出圖2A所示積體電路100的一些實施例的俯視圖,其中重佈線層202(參見下文)的材料及頂蓋層204(參見下文)的材料被移除,因此以第一虛線示出重佈線層202的周界202p且以第二虛線示出頂蓋層204的周界204p。
如圖2A到圖2B中所示,重佈線層(RDL)202設置在金屬化結構112、側壁間隔件122及鈍化層120之上。在一些實施例中,重佈線層202設置在最上部導電元件119、側壁間隔件122的經圓化的側壁122s及鈍化層120的上表面上。在另外的一些實施例中,重佈線層202為鈍化層120、側壁間隔件122及內連結構118共形地加襯。
在一些實施例中,重佈線層202電耦合到內連結構118,且因此電耦合到半導體裝置104。重佈線層202被配置成提供最上部導電元件119與輸入/輸出(I/O)結構206之間的電連接,輸入/輸出結構206設置在與最上部導電元件119間隔的位置處。舉例來說,重佈線層202可在橫向方向上從最上部導電元件119跨越鈍化層120的上表面延伸到與最上部導電元件119間隔的位置。因此,輸入/輸出結構206可設置在所述位置處且經由重佈線層202電耦合到半導體裝置104。
在一些實施例中,輸入/輸出結構206設置在重佈線層202上。在其他實施例中,輸入/輸出結構206設置在凸塊下金屬化結構(under-bump metallization structure)(未示出)上,凸塊下金屬化結構設置在重佈線層202上。在其他實施例中,輸入/輸出結構206被配置成將重佈線層202電耦合到外部電路系統(例如,印刷電路板、外部微處理器等)。在其他實施例中,輸入/輸出結構206可以是例如凸塊結構/球結構、打線接合結構等。在另外的一些實施例中,輸入/輸出結構206可包含例如金(Au)、焊料(solder)、一些其他導電材料或前述材料的組合。
在一些實施例中,重佈線層202可包含例如鋁、銅、鋁銅、一些其他導電材料或前述材料的組合。在其他實施例中,重佈線層202與內連結構118包含不同的導電材料。舉例來說,重佈線層202可包含鋁,且內連結構118可包含銅。在其他實施例中,重佈線層202可包含內連結構118並不包含的導電材料。在另外的一些實施例中,重佈線層202及/或接墊124(例如,參見圖1A到圖1B)可被稱為導電結構。
由於側壁間隔件122沿著第一內側壁120s設置且由於側壁間隔件122具有經圓化的側壁122s,因此沿著側壁間隔件122的經圓化的側壁122s延伸的重佈線層202的一部分的厚度變化可得以減小。因此,側壁間隔件122可減小重佈線層頸縮。因此,側壁間隔件122可防止重佈線層頸縮所導致的內連結構118損壞,借此提高積體電路100的性能(例如,功耗減少,使用壽命延長等)。
在一些實施例中,頂蓋層204設置在鈍化層120及重佈線層202之上。在這些實施例中,輸入/輸出結構206穿過頂蓋層204延伸至與重佈線層202接觸的位置處,以使得輸入/輸出結構206電耦合到重佈線層202。在其他實施例中,頂蓋層204可具有實質上平坦的上表面。在另外的一些實施例中,頂蓋層204可包含例如氧化物(例如,SiO2
)、氮化物(例如,SiN)、氮氧化物(例如,SiOX
NY
)、一些其他介電材料或前述材料的組合。
圖3A到圖3B示出圖1A到圖1B所示積體電路100的一些實施例的各種剖視圖。圖3A示出圖1A到圖1B所示積體電路100的一些更詳細實施例的剖視圖。圖3B示出圖3A所示區域302的一些實施例的放大剖視圖。應瞭解,在一些實施例中,圖2A到圖2B所示積體電路100可包括與圖3A到圖3B所示出的實質上類似特徵。舉例來說,在一些實施例中,在闡述圖3A到圖3B的以下段落中可由“重佈線層202”代替“接墊124”。
如圖3A到圖3B中所示,蝕刻停止層304設置在鈍化層120與金屬化結構112之間。在一些實施例中,蝕刻停止層304設置在層間介電結構116及最上部導電元件119上。在其他實施例中,鈍化層120及側壁間隔件122設置在蝕刻停止層304上。在這些實施例中,第一內側壁120s可從蝕刻停止層304的上表面延伸到鈍化層120的上表面。在其他此類實施例中,側壁間隔件122的經圓化的側壁122s可從蝕刻停止層304延伸到鈍化層120。
在一些實施例中,蝕刻停止層304包括從最上部導電元件119延伸到側壁間隔件122的多個第二內側壁304s。在其他實施例中,最上部導電元件119的上表面的至少一部分設置在第二內側壁304s之間。在其他實施例中,相對的第一內側壁120s與相對的第二內側壁304s遠遠間隔開。在其他實施例中,第二內側壁304s被磨圓。在其他實施例中,第二內側壁304s可實質上垂直。在其他實施例中,第二內側壁304s中的一者或多者可從層間介電結構116延伸到側壁間隔件122。在這些實施例中,層間介電結構116的上表面的至少一部分設置在第二內側壁304s之間。
在一些實施例中,蝕刻停止層304包含例如氧化物(例如,SiO2
)、氮化物(例如,SiN)、氮氧化物(例如,SiOX
NY
)、一些其他介電材料或前述材料的組合。在其他實施例中,蝕刻停止層304與側壁間隔件122包含不同的材料。在其他實施例中,蝕刻停止層304與鈍化層120及側壁間隔件122兩者包含不同的材料。在另外的一些實施例中,蝕刻停止層304的高度(例如,在蝕刻停止層304的最上部表面與最下部表面之間)可介於約100奈米(nm)與約200奈米之間。
在一些實施例中,最上部導電元件119包括多個第三內側壁119s,第三內側壁119s從最上部導電元件119的上表面119u延伸到蝕刻停止層304。在這些實施例中,最上部導電元件119的上表面119u設置在最上部導電元件119的最上部表面與最上部導電元件119的下表面之間。在其他實施例中,相對的第二內側壁304s與相對的第三內側壁119s遠遠間隔開。在另外的一些實施例中,第三內側壁119s被磨圓。在其他實施例中,第三內側壁119s可實質上垂直。
在一些實施例中,第三內側壁119s、第二內側壁304s及側壁間隔件122的經圓化的側壁122s分別界定共同的內側壁(common inner sidewall),所述共同的內側壁從最上部導電元件119延伸到鈍化層120的上表面。在其他實施例中,所述共同的內側壁可具有比第一內側壁120s的曲率半徑大的曲率半徑。在另外的一些實施例中,接墊124通過沿著共同的內側壁延伸而從鈍化層120的上表面連續延伸到最上部導電元件119的上表面119u。在這些實施例中,設置在鈍化層120之上的接墊124的一部分可具有實質上平坦的上表面,設置成沿著共同的內側壁的接墊124的一部分可具有經圓化的側壁,且設置在最上部導電元件119的上表面119u之上的接墊124的一部分可具有實質上平坦的上表面。
在一些實施例中,側壁間隔件122可具有第一厚度T1
,第一厚度T1
是鈍化層120的高度H的至少約40%。在其他實施例中,側壁間隔件122的高度可與鈍化層120的高度H實質上相同。在其他實施例中,鈍化層120的高度H與第一厚度T1
之間的比率可以是例如7比3、6比4、或1比1。在其他實施例中,鈍化層120的高度H可介於約200奈米與約600奈米之間。在其他實施例中,第一厚度T1
可介於約80奈米與約600奈米之間。在另外的一些實施例中,側壁間隔件122的經圓化的側壁122s可具有比第一內側壁120s的曲率半徑大的曲率半徑。
在一些實施例中,相對的第一內側壁120s之間的距離D可小於或等於約3微米(µm)。在其他實施例中,接墊124可具有第二厚度T2
及第三厚度T3
。在一些實施例中,第二厚度T2
可介於約100奈米與約10,000奈米之間。在其他實施例中,第二厚度T2
可小於或等於約300奈米。在其他實施例中,第三厚度T3
可介於約100奈米與約10,000奈米之間。在其他實施例中,第三厚度T3
可小於或等於約300奈米。在其他實施例中,第二厚度T2
與第三厚度T3
之間的差可是正/負(±)20%。在其他實施例中,第二厚度T2
可大於第三厚度T3
。
在一些實施例中,輸入/輸出結構206設置在接墊124上。在這些實施例中,輸入/輸出結構206可直接設置在接墊124上方。在其他此類實施例中,輸入/輸出結構206可直接設置在最上部導電元件119上方。在其他實施例中,輸入/輸出結構206被配置成將接墊124電耦合到外部電路系統(例如,印刷電路板、外部微處理器等)。
圖4到圖12示出形成圖3A到圖3B所示積體電路100的一些實施例的一系列剖視圖。
如圖4中所示,在金屬化結構112之上形成蝕刻停止層304。在一些實施例中,金屬化結構112包括設置在層間介電(ILD)結構116中的內連結構118。在其他實施例中,內連結構118的最上部導電元件119(例如,最上部金屬線)具有與層間介電結構116的上表面實質上共面的上表面。
在一些實施例中,用於形成蝕刻停止層304的製程包括在層間介電結構116及最上部導電元件119上沉積蝕刻停止層304。在其他實施例中,可例如通過化學氣相沉積(chemical vapor deposition,CVD)、物理氣相沉積(physical vapor deposition,PVD)、原子層沉積(atomic layer deposition,ALD)、濺射、一些其他沉積製程或前述製程的組合來沉積蝕刻停止層304。
如圖4中所示,在蝕刻停止層304之上形成第一介電層402。在一些實施例中,第一介電層402可包含例如氧化物(例如,SiO2
)、氮化物(例如,SiN)、氮氧化物(例如,SiOX
NY
)、一些其他介電材料或前述材料的組合。在其他實施例中,第一介電層402與蝕刻停止層304包含不同的介電材料。
在一些實施例中,用於形成第一介電層402的製程包括在蝕刻停止層304上沉積第一介電層402。在其他實施例中,可例如通過CVD、PVD、ALD、濺射、一些其他沉積製程或前述製程的組合來沉積第一介電層402。
如圖5中所示,在蝕刻停止層304之上形成鈍化層120。在一些實施例中,用於形成鈍化層120的製程包括在第一介電層402(例如,參見圖4)中形成第一開口502。在其他實施例中,第一開口502是由鈍化層120的多個第一內側壁120s與蝕刻停止層304的上表面界定。在另外的一些實施例中,第一開口502的相對側以小於或等於約3微米間隔開。
在一些實施例中,用於形成鈍化層120的製程包括在第一介電層402上沉積罩幕層(未示出)(例如,正性光阻/負性光阻)。此後,通過在適當位置處的所述罩幕層來在第一介電層402中執行第一蝕刻504(例如,濕式蝕刻/乾式蝕刻)。在一些實施例中,第一蝕刻504是乾式蝕刻(例如,反應性離子蝕刻(Reactive-Ion Etching,RIE))。第一蝕刻504通過移除第一介電層402的未被掩蔽部分在第一介電層402中形成第一開口502,借此形成鈍化層120。隨後,在一些實施例中,剝離罩幕層。
如圖6中所示,在鈍化層120及蝕刻停止層304之上形成第二介電層602。在一些實施例中,第二介電層602是形成作為第一開口502及鈍化層120的上表面加襯的共形層。在其他實施例中,第二介電層602可包含例如氧化物(例如,SiO2
)、氮化物(例如,SiN)、氮氧化物(例如,SiOX
NY
)、一些其他介電材料或前述材料的組合。在其他實施例中,第二介電層602可與蝕刻停止層304及/或鈍化層120包含不同的介電材料。在其他實施例中,第二介電層602可與鈍化層120包含相同的介電材料。
在一些實施例中,用於形成第二介電層602的製程包括在鈍化層120的上表面、第一內側壁120s及蝕刻停止層304的上表面上沉積第二介電層602。在其他實施例中,可通過例如CVD、PVD、ALD、濺射、一些其他沉積製程或前述製程的組合來沉積第二介電層602。
如圖7中所示,在蝕刻停止層304上且沿著第一內側壁120s形成側壁間隔件122。在一些實施例中,側壁間隔件122形成有多個經圓化的側壁122s。在其他實施例中,用於形成側壁間隔件122的製程包括在第二介電層602(例如,參見圖6)中執行第二蝕刻702(例如,濕式蝕刻/乾式蝕刻)。在一些實施例中,第二蝕刻702是乾式蝕刻(例如,RIE)。在其他實施例中,第二蝕刻702移除第二介電層602的水準區段但不移除第二介電層602的垂直區段,借此形成側壁間隔件122。
如圖8中所示,在最上部導電元件119之上形成第二開口804。在一些實施例中,第二開口804是由側壁間隔件122的經圓化的側壁122s、蝕刻停止層304的多個第二內側壁304s、最上部導電元件119的多個第三內側壁119s及最上部導電元件119的上表面119u界定。
在一些實施例中,用於形成第二開口804的製程包括在鈍化層120及側壁間隔件122上沉積第二罩幕層(未示出)(例如,正性光阻/負性光阻)。此後,通過在適當位置處的第二罩幕層在蝕刻停止層304中執行第三蝕刻802(例如,濕式蝕刻/乾式蝕刻)。在一些實施例中,第三蝕刻802是乾式蝕刻(例如,RIE)。第三蝕刻802移除蝕刻停止層304的未被掩蔽部分,借此形成第二開口804。隨後,在一些實施例中,剝離第二罩幕層。在其他實施例中,可在不形成第二罩幕層的情況下執行第三蝕刻802。在此種其他實施例中,第三蝕刻802可以比移除側壁間隔件122及/或鈍化層120的暴露部分還要高的速率來選擇性地移除蝕刻停止層304的暴露部分。
如圖9中所示,在最上部導電元件119、蝕刻停止層304、側壁間隔件122及鈍化層120之上形成導電層902。在一些實施例中,導電層902是形成作為第二開口804及鈍化層120的上表面加襯的共形層。在其他實施例中,導電層902可形成有小於或等於約300奈米的厚度(例如,導電層902的上表面與底表面之間的距離)。在其他實施例中,導電層902可包含例如鋁、銅、鋁銅、一些其他導電材料或前述材料的組合。在其他實施例中,導電層902與內連結構118包含不同的導電材料。在另外的一些實施例中,導電層902可包含內連結構118並不包含的導電材料。
在一些實施例中,用於形成導電層902的製程包括在最上部導電元件119的上表面119u、第三內側壁119s、第二內側壁304s、側壁間隔件122的經圓化的側壁122s及鈍化層120的上表面上沉積導電層902。在其他實施例中,可通過例如CVD、PVD、ALD、濺射、電化學鍍覆(electrochemical plating)、無電鍍覆(electroless plating)、一些其他沉積製程或前述製程的組合來沉積導電層902。
如圖10中所示,在最上部導電元件119、蝕刻停止層304、側壁間隔件122及鈍化層120之上形成接墊124。在一些實施例中,用於形成接墊124的製程包括在導電層902(例如,參見圖9)上形成罩幕層1002。在一些實施例中,用於形成罩幕層1002的製程包括在導電層902上沉積(例如,經由旋轉塗布製程)光阻層(未示出)。此後,將光阻層選擇性地暴露於輻射(radiation)。隨後,將光阻層暴露於顯影劑以移除光阻層的暴露(或未暴露)於輻射的部分,借此形成罩幕層1002。
在一些實施例中,通過位於適當位置處的罩幕層1002在導電層902中執行第四蝕刻1004(例如,濕式蝕刻/乾式蝕刻)。在一些實施例中,第四蝕刻1004是乾式蝕刻(例如,反應性離子蝕刻(RIE))。第四蝕刻1004移除導電層902的未被掩蔽部分,借此形成接墊124。
如圖11中所示,從接墊124移除罩幕層1002(例如,參見圖10)。在一些實施例中,用於移除罩幕層1002的製程包括將罩幕層1002暴露於剝離劑1102。在其他實施例中,剝離劑1102是溶劑型剝離劑(solvent-based stripping agent)。在其他實施例中,通過將半導體基底102(且因此將罩幕層1002)浸沒在剝離劑1102中來將罩幕層1002暴露於剝離劑1102。在另外的一些實施例中,在從接墊124移除罩幕層1002之後,完成接墊124的形成。
在一些實施例中,剝離劑1102包含有機化合物(例如,兒茶酚(catechol,C6
H6
O2
))。在其他實施例中,剝離劑1102可包含胺(amine)。在其他實施例中,剝離劑1102以比移除接墊124的導電材料快的速率移除內連結構118的導電材料。舉例來說,剝離劑1102可以大於或等於剝離劑移除接墊124的導電材料的速率的十倍的速率來移除內連結構的導電材料。
由於側壁間隔件122沿著第一內側壁120s設置且由於側壁間隔件122具有經圓化的側壁122s,因此沿著側壁間隔件122的經圓化的側壁122s延伸的接墊124的一部分的厚度變化可得以減小。因此,側壁間隔件122可減小接墊頸縮。因此,接墊124可防止內連結構118暴露於剝離劑1102,借此防止剝離劑1102損壞內連結構118(例如,不期望地移除內連結構118的一些部分)。
如圖12中所示,在接墊124之上形成輸入/輸出(I/O)結構206。在一些實施例中,在接墊124之上形成輸入/輸出結構206會將輸入/輸出結構206經由接墊124電耦合到內連結構118。在一些實施例中,用於形成輸入/輸出結構206的製程包括在接墊124上沉積導電結構(未示出)。在其他實施例中,導電結構可包含例如金(Au)、焊料(solder)、一些其他導電材料或前述材料的組合。在其他實施例中,可通過例如CVD、PVD、ALD、濺射、電化學鍍覆、無電鍍覆、一些其他沉積製程或前述製程的組合來沉積導電結構。
此後,可對導電結構執行回焊(reflow)製程(例如,回焊焊接),借此形成輸入/輸出結構206。應瞭解,在一些實施例中,可利用其他製程(例如,打線接合)來形成輸入/輸出結構206。在另外的一些實施例中,在形成輸入/輸出結構206之後,完成積體電路100的形成。
如圖13中所示出,提供形成積體電路(IC)的方法的一些實施例的流程圖1300,所述積體電路具有減小接墊頸縮的側壁間隔件。應瞭解,在一些實施例中,流程圖1300中所提供的方法可實質上類似于形成具有減小重佈線層(RDL)頸縮的側壁間隔件的積體電路(IC)的方法。雖然圖13的流程圖1300在本文中被說明且闡述為一系列的動作或事件,但應瞭解,不應在限制意義上解釋這些動作或事件的所說明排序。舉例來說,除本文中所說明及/或所述的動作或事件之外,一些動作還可以不同的次序發生及/或與其他動作或事件同時發生。此外,並非所有的所說明動作皆可被需要來實施本文中所說明的一個或多個方面或實施例,且可在一個或多個單獨的動作及/或階段中實施本文中所繪示的動作中的一者或多者。
在動作1302處,在金屬化結構之上形成第一開口,其中所述金屬化結構包括設置在層間介電(ILD)結構中的內連結構。所述第一開口是由鈍化層的多個內側壁及蝕刻停止層的上表面界定。圖4到圖5示出與動作1302對應的一些實施例的一系列剖視圖。
在動作1304處,在蝕刻停止層上且沿著鈍化層的內側壁形成側壁間隔件,其中側壁間隔件具有多個經圓化的側壁。圖6到圖7示出與動作1304對應的一些實施例的一系列剖視圖。
在動作1306處,在金屬化結構之上形成第二開口,其中第二開口是由側壁間隔件的經圓化的側壁、蝕刻停止層的多個內側壁及內連結構的上表面界定。圖8示出與動作1306對應的一些實施例的剖視圖。
在動作1308處,在金屬化結構之上形成接墊並將所述接墊電耦合到內連結構,其中接墊形成在內連結構的上表面、蝕刻停止層的內側壁、側壁間隔件的經圓化的側壁及所述鈍化層的上表面上。圖9到圖11示出與動作1308對應的一些實施例的一系列剖視圖。
在動作1310處,在接墊之上形成輸入/輸出(I/O)結構,其中I/O結構經由接墊電耦合到內連結構。圖12示出與動作1310對應的一些實施例的剖視圖。
在一些實施例中,本公開提供一種積體晶片(IC)。所述積體晶片包括半導體基底。金屬化結構設置在所述半導體基底之上,其中所述金屬化結構包括設置在層間介電(ILD)結構中的內連結構。鈍化層設置在所述金屬化結構之上,其中所述內連結構的上表面至少部分地設置在所述鈍化層的相對的內側壁之間。側壁間隔件沿著所述鈍化層的所述相對的內側壁設置,其中所述側壁間隔件具有多個經圓化的側壁。導電結構設置在所述鈍化層、所述側壁間隔件的所述多個經圓化的側壁及所述內連結構的所述上表面上,其中所述導電結構是接墊及/或重佈線層(RDL)。
在其他實施例中,本公開提供一種積體晶片(IC)。所述積體晶片包括半導體基底。金屬化結構設置在所述半導體基底之上,其中所述金屬化結構包括設置在層間介電(ILD)結構中的內連結構。蝕刻停止層設置在所述金屬化結構上,其中所述內連結構包括至少部分地設置在所述蝕刻停止層的相對的內側壁之間的最上部導電元件。鈍化層設置在所述蝕刻停止層上,其中所述鈍化層包括相對的內側壁,所述相對的內側壁從所述蝕刻停止層的上表面延伸到所述鈍化層的上表面。側壁間隔件設置在所述蝕刻停止層上且沿著所述鈍化層的所述相對的內側壁設置,其中所述側壁間隔件具有面向彼此的多個經圓化的側壁。導電結構設置在所述最上部導電元件、所述蝕刻停止層的所述相對的內側壁、所述側壁間隔件的所述多個經圓化的側壁及所述鈍化層的所述上表面上。
在又一些其他實施例中,本公開提供一種形成積體晶片(IC)的方法。所述方法包括:在半導體基底之上形成金屬化結構且在所述半導體基底上形成半導體裝置,其中所述金屬化結構包括設置在層間介電(ILD)結構中的內連結構。在所述金屬化結構之上形成蝕刻停止層。在所述蝕刻停止層上形成介電層。移除所述介電層的一部分以形成鈍化層,其中所述鈍化層的相對的內側壁界定第一開口。在所述蝕刻停止層上且沿著所述鈍化層的所述相對的內側壁形成側壁間隔件,其中所述側壁間隔件形成有多個經圓化的側壁。移除所述蝕刻停止層的一部分以形成暴露出所述內連結構的第二開口。形成接墊或重佈線層,所述接墊或重佈線層與所述多個經圓化的側壁、所述鈍化層的上表面及所述內連結構接觸。
雖然本發明實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明實施例的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100:積體電路
102:半導體基底
104:半導體裝置
106:源極/汲極區
108:閘極介電質
110:閘極電極
112:金屬化結構
116:層間介電結構
118:內連結構
119:最上部導電元件
119s:第三內側壁
119u:上表面
120:鈍化層
120s:第一內側壁
122:側壁間隔件
122s:經圓化的側壁
124:接墊
124p、202p、204p:周界
202:重佈線層
204:頂蓋層
206:輸入/輸出結構
302:區域
304:蝕刻停止層
304s:第二內側壁
402:第一介電層
502:第一開口
504:第一蝕刻
602:第二介電層
702:第二蝕刻
802:第三蝕刻
804:第二開口
902:導電層
1002:罩幕層
1004:第四蝕刻
1102:剝離劑
1300:流程圖
1302、1304、1306、1308、1310:動作D:距離H:高度
T1:第一厚度
T2:第二厚度
T3:第三厚度
結合附圖閱讀以下實施方式,會最佳地理解本發明實施例之態樣。應注意,根據本行業中的標準慣例,各種特徵並非按比例繪製。實際上,為了清楚起見,可以任意增加或減少各種特徵的尺寸。
圖1A到圖1B示出積體電路的一些實施例的各種視圖,所述積體電路具有減小接墊頸縮(bond pad necking)的側壁間隔件。
圖2A到圖2B示出積體電路的一些實施例的各種視圖,所述積體電路具有減小重佈線層頸縮(redistribution layer necking)的側壁間隔件。
圖3A到圖3B示出圖1A到圖1B所示積體電路的一些實施例的各種剖視圖。
圖4到圖12示出形成圖3A到圖3B所示積體電路的一些實施例的一系列剖視圖。
圖13示出形成積體電路的方法的一些實施例的流程圖,所述積體電路具有減小接墊頸縮的側壁間隔件。
100:積體電路
102:半導體基底
104:半導體裝置
106:源極/汲極區
108:閘極介電質
110:閘極電極
112:金屬化結構
116:層間介電結構
118:內連結構
119:最上部導電元件
120:鈍化層
120s:第一內側壁
122:側壁間隔件
122s:經圓化的側壁
124:接墊
Claims (20)
- 一種積體晶片,包括: 半導体基底; 金屬化結构,設置在所述半導体基底之上,所述金屬化結构包括設置在層間介電結构中的內連結构; 鈍化層,設置在所述金屬化結构之上,其中所述內連結构的上表面至少部分地設置在所述鈍化層的相對的內側壁之間; 側壁間隔件,沿著所述鈍化層的所述相對的內側壁設置,所述側壁間隔件具有多個經圓化的側壁;以及 導電結構,設置在所述鈍化層、所述側壁間隔件的所述多個經圓化的側壁及所述內連結構的所述上表面上,其中所述導電結構是接墊及/或重佈線層。
- 如申請專利範圍第1項所述的積體晶片,其中所述側壁間隔件的所述多個經圓化的側壁面向彼此。
- 如申請專利範圍第1項所述的積體晶片,其中所述鈍化層的所述相對的內側壁實質上垂直。
- 如申請專利範圍第1項所述的積體晶片,其中所述導電結構的第一上表面設置在所述鈍化層的所述相對的內側壁之間且設置在所述鈍化層的上表面之下。
- 如申請專利範圍第4項所述的積體晶片,其中所述導電結構包括經圓化的側壁,所述側壁從所述導電結構的所述第一上表面延伸到所述導電結構的第二上表面,且其中所述導電結構的所述第二上表面設置在所述鈍化層的所述上表面之上且橫向延伸超過所述鈍化層的所述相對的內側壁中的一者。
- 如申請專利範圍第1項所述的積體晶片,還包括: 蝕刻停止層,設置在所述鈍化層與所述金屬化結構之間,其中所述導電結構設置在所述蝕刻停止層的相對的內側壁上。
- 如申請專利範圍第6項所述的積體晶片,其中: 所述蝕刻停止層包含第一介電材料;且 所述鈍化層包含與所述第一介電材料不同的第二介電材料。
- 如申請專利範圍第7項所述的積體晶片,其中所述鈍化層的所述相對的內側壁與所述蝕刻停止層的所述相對的內側壁遠遠間隔開。
- 如申請專利範圍第8項所述的積體晶片,其中所述蝕刻停止層的所述相對的內側壁被磨圓。
- 如申請專利範圍第9項所述的積體晶片,其中所述蝕刻停止層的所述經圓化的相對的內側壁及所述側壁間隔件的所述多個經圓化的側壁分別界定多個共同的經圓化的側壁。
- 如申請專利範圍第10項所述的積體晶片,其中所述蝕刻停止層與所述側壁間隔件、所述鈍化層、所述內連結構及所述層間介電結構接觸。
- 一種積體晶片,包括: 半導體基底; 金屬化結構,設置在所述半導體基底之上,所述金屬化結構包括設置在層間介電結構中的內連結構; 蝕刻停止層,設置在所述金屬化結構上,其中所述內連結構包括最上部導電元件,所述最上部導電元件至少部分地設置在所述蝕刻停止層的相對的內側壁之間; 鈍化層,設置在所述蝕刻停止層上,所述鈍化層包括相對的內側壁,所述相對的內側壁從所述蝕刻停止層的上表面延伸到所述鈍化層的上表面; 側壁間隔件,設置在所述蝕刻停止層上且沿著所述鈍化層的所述相對的內側壁設置,其中所述側壁間隔件具有面向彼此的多個經圓化的側壁;以及 導電結構,設置在所述最上部導電元件、所述蝕刻停止層的所述相對的內側壁、所述側壁間隔件的所述多個經圓化的側壁及所述鈍化層的所述上表面上。
- 如申請專利範圍第12項所述的積體晶片,其中: 所述內連結構包含第一導電材料;且 所述導電結構包含與所述第一導電材料不同的第二導電材料。
- 如申請專利範圍第12項所述的積體晶片,其中: 所述側壁間隔件的厚度是所述鈍化層的高度的至少約40%。
- 如申請專利範圍第12項所述的積體晶片,還包括: 半導體裝置,設置在所述半導體基底上,其中所述內連結構將所述半導體裝置電耦合到所述導電結構;以及 輸入/輸出結構,設置在所述導電結構上,其中所述輸入/輸出結構被配置成將所述導電結構電耦合到外部電路系統。
- 如申請專利範圍第12項所述的積體晶片,其中所述最上部導電元件包括: 相對的內側壁,從所述最上部導電元件的第一上表面延伸到所述最上部導電元件的第二上表面,其中所述導電結構設置在所述最上部導電元件的所述相對的內側壁上。
- 如申請專利範圍第16項所述的積體晶片,其中所述側壁間隔件的所述多個經圓化的側壁、所述蝕刻停止層的相對的內側壁及所述最上部導電元件的所述相對的內側壁分別界定多個共同的相對的側壁。
- 一種形成積體晶片的方法,所述方法包括: 在半導體基底之上形成金屬化結構且在所述半導體基底上形成半導體裝置,所述金屬化結構包括設置在層間介電結構中的內連結構; 在所述金屬化結構之上形成蝕刻停止層; 在所述蝕刻停止層上形成介電層; 移除所述介電層的一部分以形成鈍化層,其中所述鈍化層的相對的內側壁界定第一開口; 在所述蝕刻停止層上且沿著所述鈍化層的所述相對的內側壁形成側壁間隔件,其中所述側壁間隔件形成有多個經圓化的側壁; 移除所述蝕刻停止層的一部分以形成暴露出所述內連結構的第二開口;以及 形成接墊或重佈線層,所述接墊或所述重佈線層與所述多個經圓化的側壁、所述鈍化層的上表面及所述內連結構接觸。
- 如申請專利範圍第18項所述的方法,其中形成所述接墊包括: 在所述鈍化層上形成導電層且為所述第二開口加襯; 在所述導電層上形成罩幕層; 在所述罩幕層設置在所述導電層上的情況下,蝕刻所述導電層以形成所述接墊;以及 將所述罩幕層暴露於剝離劑以從所述接墊移除所述罩幕層。
- 如申請專利範圍第19項所述的方法,其中: 所述第二開口是由所述蝕刻停止層的相對的內側壁及所述側壁間隔件的所述多個經圓化的側壁界定;且 所述蝕刻停止層的所述相對的內側壁設置在所述鈍化層的所述相對的內側壁之間。
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