TW202018844A - Apparatus and method for monitoring chamber - Google Patents
Apparatus and method for monitoring chamber Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000012544 monitoring process Methods 0.000 title claims description 19
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 29
- 150000002367 halogens Chemical class 0.000 claims abstract description 29
- 238000012806 monitoring device Methods 0.000 claims abstract description 23
- 238000005424 photoluminescence Methods 0.000 claims description 32
- 230000002159 abnormal effect Effects 0.000 claims description 11
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
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- 238000001514 detection method Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 52
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001291 vacuum drying Methods 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
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- 238000004868 gas analysis Methods 0.000 description 3
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
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- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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Abstract
Description
本發明涉及真空腔室的監控裝置及方法,更詳細而言,涉及一種感知從使半導體裝備或部件乾燥的腔室中釋放的氣體的腔室監控裝置及方法。The present invention relates to a vacuum chamber monitoring apparatus and method, and more specifically, to a chamber monitoring apparatus and method that senses gas released from a chamber that dries semiconductor equipment or components.
當為了乾燥半導體元件等的材料而執行真空乾燥作業時,為了使將進行真空乾燥作業的腔室保持真空狀態而使用真空泵。此時,真空管線連接真空泵與真空腔室。When a vacuum drying operation is performed to dry materials such as semiconductor elements, a vacuum pump is used to maintain a vacuum state in the chamber where the vacuum drying operation is performed. At this time, the vacuum line connects the vacuum pump and the vacuum chamber.
當用於真空乾燥的熱源產生雜質氣體時,作為腔室內作業物的不良要素進行作用。另外,即使在與真空腔室連接的真空管線內存在雜質氣體的情況下,也會成為作業物的不良要素,並存在逆向流入腔室內的問題。When the heat source for vacuum drying generates impurity gas, it acts as a bad element of the work in the chamber. In addition, even if there is impurity gas in the vacuum line connected to the vacuum chamber, it may become a bad element of the work, and there is a problem of flowing backward into the chamber.
根據關於晶片乾燥裝置的以往技術,公開了一種晶片乾燥裝置及作為加熱裝置的線圈,該晶片乾燥裝置包括腔室、配備於該腔室內並使晶片固定的導向卡盤,其特徵在於,包括:加裝於該腔室上部並噴射從外部供應的異丙醇的裝置;加裝於該腔室的外周面而使得該腔室的內部保持預定溫度的加熱裝置;加裝於該腔室的底面部並將在其內部噴射的異丙醇排出到外部的裝置;加裝於該異丙醇排出裝置的一側並向腔室提供真空的裝置。According to the prior art of a wafer drying device, a wafer drying device and a coil as a heating device are disclosed. The wafer drying device includes a chamber and a guide chuck that is provided in the chamber and fixes the wafer, and is characterized by including: A device mounted on the upper part of the chamber and spraying isopropyl alcohol supplied from the outside; a heating device mounted on the outer peripheral surface of the chamber so that the inside of the chamber maintains a predetermined temperature; a mounted on the bottom surface of the chamber The device that discharges the isopropyl alcohol sprayed inside to the outside; a device that is attached to one side of the isopropyl alcohol discharge device and provides a vacuum to the chamber.
但是,如果使用諸如線圈的金屬,則熱源本身釋放氣體,會使真空腔室內的作業物污染。另外,發生從熱源釋放的氣體無法控制的問題。However, if a metal such as a coil is used, the heat source itself releases gas, which may contaminate the work in the vacuum chamber. In addition, there is a problem that the gas released from the heat source cannot be controlled.
解決的技術問題Technical problems solved
本發明正是為了解決如上所述問題而研發的,目的在於提供一種實時感知真空腔室內發生的氣體的腔室監控裝置及方法。The present invention was developed to solve the above problems, and the object is to provide a chamber monitoring device and method for real-time sensing of the gas generated in the vacuum chamber.
本發明的技術課題不限於以上提及的內容,未提及的其他技術課題是從業人員可以從以下記載而明確理解的。The technical problems of the present invention are not limited to those mentioned above, and other technical problems that are not mentioned are clearly understood by practitioners from the following description.
技術方案Technical solutions
本發明的一個實施例提供一種腔室監控裝置,包括:一個以上的工序腔室,其在內部配備有多個鹵素燈;真空泵,其用於向該工序腔室供應真空;一個以上的閥門,其用於使連接於該工序腔室及真空泵的真空管線開閉;氣體感知部,其連接於該真空管線,配置有兩個以上氣體分析儀;及控制部;該兩個以上氣體分析儀為互不相同的種類。An embodiment of the present invention provides a chamber monitoring device, including: more than one process chamber equipped with a plurality of halogen lamps inside; a vacuum pump used to supply vacuum to the process chamber; more than one valve, It is used to open and close the vacuum line connected to the process chamber and the vacuum pump; the gas sensing part, which is connected to the vacuum line, is equipped with more than two gas analyzers; and the control part; the two or more gas analyzers are mutually Different types.
在本發明的一個實施例中,該兩個以上氣體分析儀可以分別在光致發光分析儀(SP-OES)、四極質譜儀(QMS)、非色散紅外傳感器(NDIR)、電感耦合電漿發射光(ICP-OE)分析儀、紅外線吸收分析儀(infrared absorption spectrometer)及傅立葉變換紅外線(Fourier transform infrared:FTIR)分析儀中選擇。In an embodiment of the present invention, the two or more gas analyzers can be respectively emitted in a photoluminescence analyzer (SP-OES), quadrupole mass spectrometer (QMS), non-dispersive infrared sensor (NDIR), inductively coupled plasma emission Choose from optical (ICP-OE) analyzer, infrared absorption spectrometer and Fourier transform infrared (FTIR) analyzer.
在本發明的一個實施例中,該兩個以上氣體分析儀可以為光致發光分析儀(SP-OES)及四極質譜儀(QMS)。In one embodiment of the present invention, the two or more gas analyzers may be a photoluminescence analyzer (SP-OES) and a quadrupole mass spectrometer (QMS).
在本發明的一個實施例中,該控制部可以對光致發光分析儀(SP-OES)分析的成分的峰值與四極質譜儀(QMS)分析的成分的質量值進行比較,分析從工序腔室內的樣品釋放的氣體的種類和量。In an embodiment of the present invention, the control unit may compare the peak value of the component analyzed by the photoluminescence analyzer (SP-OES) with the mass value of the component analyzed by the quadrupole mass spectrometer (QMS), and analyze the The type and amount of gas released by the sample.
在本發明的一個實施例中,該兩個以上氣體分析儀可以分別配置於從該工序腔室與真空泵之間的真空管線分支出多個的真空管線,以便能夠控制該氣體分析儀的真空度。In an embodiment of the present invention, the two or more gas analyzers may be respectively configured to branch a plurality of vacuum lines from the vacuum line between the process chamber and the vacuum pump, so that the vacuum degree of the gas analyzer can be controlled .
在本發明的一個實施例中,該工序腔室可以是用於對作業物施加熱而進行乾燥的腔室。In one embodiment of the present invention, the process chamber may be a chamber for drying by applying heat to the work.
在本發明的一個實施例中,該工序腔室可以具備:托盤,其能夠在內部加載作業物;及多個熱電偶(thermocouple),其感知腔室的溫度。In one embodiment of the present invention, the process chamber may include: a tray that can load work items inside; and a plurality of thermocouples (thermocouples) that sense the temperature of the chamber.
在本發明的一個實施例中,該熱電偶中的一部分可以配置得能夠調節位置。In an embodiment of the present invention, a part of the thermocouple may be configured to be able to adjust the position.
在本發明的一個實施例中,該鹵素燈可以沿着腔室的內壁設置既定間隔地配置,以便燈產生的熱能夠均等地傳遞給作業物的表面,該鹵素燈可以分別具備石英(Qiarts)罩。In one embodiment of the present invention, the halogen lamp can be arranged at predetermined intervals along the inner wall of the chamber, so that the heat generated by the lamp can be evenly transferred to the surface of the work object, and the halogen lamp can be provided with quartz (Qiarts )cover.
在本發明的一個實施例中,該工序腔室可以在門側的腔室本體配備有鹵素燈的一端部能夠固定的固定壁,以便鹵素燈與加載中的製品不接觸。In an embodiment of the present invention, the process chamber may be equipped with a fixing wall capable of fixing one end of the halogen lamp on the door side of the chamber body so that the halogen lamp does not contact the product being loaded.
在本發明的一個實施例中,該控制部可以具備:顯示部,其實時顯示信息;及警報發生部,其基於預先設置的信息,在發生異常信息時告知警告音。In one embodiment of the present invention, the control unit may include: a display unit that displays information in real time; and an alarm generation unit that notifies a warning sound when abnormal information occurs based on pre-set information.
在本發明的一個實施例中,該控制部可以進一步包括:腔室調節部,其調節腔室的真空和溫度;分析儀調節部,其確認該兩個以上氣體分析儀是否異常,各自獨立地調節是否運轉。In one embodiment of the present invention, the control section may further include: a chamber adjustment section that adjusts the vacuum and temperature of the chamber; and an analyzer adjustment section that confirms whether the two or more gas analyzers are abnormal, each independently Adjust whether to run.
在本發明的一個實施例中,該一個以上的閥門可以包括:第一閥門,其配置於與工序腔室鄰接的真空管線;第二閥門,其配置於分別與四極質譜儀和光致發光分析儀鄰接的真空管線;及第三閥門,其配置於與真空泵鄰接的真空管線;該控制部可以各自獨立地調節該閥門。In one embodiment of the present invention, the one or more valves may include: a first valve, which is arranged in a vacuum line adjacent to the process chamber; and a second valve, which is arranged in a quadrupole mass spectrometer and a photoluminescence analyzer, respectively The adjacent vacuum line; and the third valve, which is arranged on the vacuum line adjacent to the vacuum pump; the control unit can independently adjust the valve.
在本發明的一個實施例中,該一個以上的工序腔室可以為大小和形狀不同的兩個腔室,兩個腔室能夠同時或分別獨立地調節真空及加熱。In one embodiment of the present invention, the one or more process chambers may be two chambers with different sizes and shapes, and the two chambers can adjust vacuum and heat independently at the same time or separately.
本發明的一個實施例可以提供一種腔室監控方法,其特徵在於,調節在內部配備有多個鹵素燈的工序腔室的真空和溫度,配置有兩個以上氣體分析儀的氣體感知部分析從工序腔室內釋放的成分,控制部實時告知分析的成分並進行控制。An embodiment of the present invention may provide a chamber monitoring method, which is characterized by adjusting the vacuum and temperature of a process chamber equipped with a plurality of halogen lamps inside, and a gas sensing part equipped with more than two gas analyzers to analyze from The components released in the process chamber are notified and controlled by the control unit in real time.
在本發明的一個實施例中,該兩個以上氣體分析儀可以為光致發光分析儀(SP-OES)及四極質譜儀(QMS),該控制部可以在該光致發光分析儀以工序腔室內的樣品產生的成分的電漿光圖像的峰值為基礎,監控關於特定元素的數據,監控該四極質譜儀檢測的成分的質量值的數據後,分析該數據並實時告知腔室內釋放的成分。In an embodiment of the present invention, the two or more gas analyzers may be a photoluminescence analyzer (SP-OES) and a quadrupole mass spectrometer (QMS), and the control unit may use a process chamber in the photoluminescence analyzer Based on the peak value of the plasma light image of the component produced by the indoor sample, after monitoring the data about the specific element, after monitoring the data of the mass value of the component detected by the quadrupole mass spectrometer, the data is analyzed and the component released in the chamber is notified in real time .
在本發明的一個實施例中,該氣體分析儀可以進一步包括非色散紅外傳感器(NDIR),該控制部可以進一步包括監控該非色散紅外傳感器檢測的成分的濃度的步驟。In one embodiment of the present invention, the gas analyzer may further include a non-dispersive infrared sensor (NDIR), and the control section may further include a step of monitoring the concentration of the component detected by the non-dispersive infrared sensor.
在本發明的一個實施例中,該控制部的腔室調節部可以基於預先設置的信息,在發生異常信息時控制工序腔室的運轉,分析儀調節部可以確認氣體分析儀有無異常,各自獨立地控制是否運轉。In an embodiment of the present invention, the chamber adjustment section of the control section can control the operation of the process chamber when abnormal information occurs based on preset information, and the analyzer adjustment section can confirm whether the gas analyzer is abnormal or not. To control whether it is running.
發明效果Invention effect
本發明的腔室監控裝置及方法使用鹵素燈作為熱源,因而具有使得熱源本身不向腔室內釋放雜質氣體的效果。另外,使用兩個以上氣體分析儀來分析氣體,因而具有可以準確地感知腔室內的殘留氣體及真空管線內的殘留氣體的種類的優點。另外,實時監控氣體,因而具有可以高效管理工序控制的優點。The chamber monitoring device and method of the present invention use a halogen lamp as a heat source, thus having the effect that the heat source itself does not release impurity gas into the chamber. In addition, since two or more gas analyzers are used to analyze the gas, there is an advantage that the types of the residual gas in the chamber and the residual gas in the vacuum line can be accurately sensed. In addition, real-time monitoring of gas has the advantage that process control can be efficiently managed.
本發明效果不限於以上提及的內容,未提及的其他效果是本發明所屬技術領域的具有通常知識者可以從以下記載明確理解的。The effects of the present invention are not limited to the contents mentioned above, and other effects not mentioned are clearly understood by the person having ordinary knowledge in the technical field to which the present invention belongs from the following description.
本發明的腔室監控裝置及方法可以施加多樣變更,可以擁有各種實施例,在圖式中例示性圖示特定實施例並在詳細說明中詳細地說明。但是,這並非要將本發明限定於特定的實施形態,應理解為包括本發明技術思想及技術範圍包括的所有變更、等同物及替代物。在本說明書中,即使是互不相同的實施例,對於相同或類似的構成,也賦予相同或類似的圖式標記,其說明用最初說明替代。在本說明書中使用的單數的表現,只要文理上未明確表示不同,則包括複數表現。The chamber monitoring device and method of the present invention can be subjected to various changes, and can have various embodiments. Specific embodiments are schematically illustrated in the drawings and explained in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all changes, equivalents, and substitutes included in the technical idea and technical scope of the present invention. In this specification, even if the embodiments are different from each other, the same or similar structures are given the same or similar drawings, and the description is replaced by the original description. The expressions in the singular number used in this specification include plural expressions as long as they are not expressly different in terms of literature and science.
第1圖根據本發明一個實施例,顯示了各構成,第2圖顯示了本發明一個實施例的真空腔室,第3圖顯示了本發明一個實施例的光致發光分析儀和四極質譜儀的數據,第4圖顯示了本發明一個實施例的控制部的構成,第5圖是顯示本發明一個實施例的腔室監控方法的順序圖。Fig. 1 shows various components according to an embodiment of the invention, Fig. 2 shows a vacuum chamber according to an embodiment of the invention, and Fig. 3 shows a photoluminescence analyzer and a quadrupole mass spectrometer according to an embodiment of the invention Figure 4, Figure 4 shows the structure of the control unit of an embodiment of the present invention, Figure 5 is a sequence diagram showing a chamber monitoring method of an embodiment of the present invention.
本發明的一個實施例提供一種腔室監控裝置,包括:一個以上的工序腔室100,其在內部配備有多個鹵素燈10;真空泵500,其用於向該工序腔室100供應真空;一個以上的閥門412、414、416、418,其用於使連接於該工序腔室100及真空泵500的真空管線400開閉;氣體感知部200,其包括連接於該真空管線400進行配置的光致發光分析儀(SP-0ES)210和四極質譜儀(QMS)220;及控制部300。An embodiment of the present invention provides a chamber monitoring device, including: more than one
在本發明一個實施例的裝置及方法中,該兩個以上氣體分析儀可以分別在光致發光分析儀(SP-OES)210、四極質譜儀(QMS)220、非色散紅外傳感器(NDIR)(圖上未示出)、電感耦合電漿發射光(ICP-0E)分析儀(圖上未示出)、紅外線吸收分析儀(infrared absorption spectrometer)(圖上未示出)、傅立葉變換紅外線(Fourier transform infrared:FTIR)分析儀(圖上未示出)中選擇。具體而言,可以包括光致發光分析儀(SP-OES)210和四極質譜儀(QMS)220。或者,可以包括光致發光分析儀(SP-OES)210和四極質譜儀(QMS)220之一,並可以包括其餘氣體分析儀之一。或者,可以包括光致發光分析儀(SP-OES)210和四極質譜儀(QMS)220,並可以包括其餘氣體分析儀之一。或者可以包括該分析儀中互不相同的3個以上。In the device and method of an embodiment of the present invention, the two or more gas analyzers may be respectively a photoluminescence analyzer (SP-OES) 210, a quadrupole mass spectrometer (QMS) 220, and a non-dispersive infrared sensor (NDIR) ( (Not shown in the figure), inductively coupled plasma emission light (ICP-0E) analyzer (not shown in the figure), infrared absorption spectrometer (not shown in the figure), Fourier transform infrared (Fourier) transform infrared: FTIR) analyzer (not shown in the figure). Specifically, a photoluminescence analyzer (SP-OES) 210 and a quadrupole mass spectrometer (QMS) 220 may be included. Alternatively, it may include one of a photoluminescence analyzer (SP-OES) 210 and a quadrupole mass spectrometer (QMS) 220, and may include one of the remaining gas analyzers. Alternatively, it may include a photoluminescence analyzer (SP-OES) 210 and a quadrupole mass spectrometer (QMS) 220, and may include one of the remaining gas analyzers. Or it may include three or more different ones in the analyzer.
本發明的腔室監控裝置如第1圖所示,可以包括工序腔室100、氣體感知部200、控制部300,真空管線400、閥門412、414、416、418及真空泵500。As shown in FIG. 1, the chamber monitoring device of the present invention may include a
在本發明的一個實施例中,該工序腔室100是用於對作業物施加熱而進行乾燥的腔室。In one embodiment of the present invention, the
工序腔室保持諸如預定真空壓和溫度的工序氣氛並進行工序。工序腔室具有形成外觀並支撐檢查等使用的各種設備的腔室外殼。The process chamber maintains a process atmosphere such as a predetermined vacuum pressure and temperature and performs the process. The process chamber has a chamber housing that forms an appearance and supports various equipment used for inspection and the like.
在本發明的一個實施例中,可以使用鹵素燈10作為工序腔室中的熱源。鹵素燈發出300℃~2000℃的熱,因而優點是具有高作業效率。鹵素燈可以根據作業物真空乾燥時需要的乾燥溫度而適當地調節、設置溫度。例如,為了乾燥特定作業物,可以調節得保持400℃~500℃的溫度,具有迅速加熱的優點。另外,鹵素燈具有熱源本身不產生氣體的優點。In one embodiment of the present invention, the
以往的熱源使用金屬線圈,或用金屬製作腔室內壁,在利用加熱金屬的方法提高腔室內的溫度的情況下,金屬本身因加熱而氣化會發生氣體。另外,作業物產生的氣體在腔室冷卻時附着於作為熱源的金屬並固着,為了下次乾燥作業再次提高溫度時,存在之前工序中產生並固着的氣體重新氣化的問題。In the conventional heat source, a metal coil is used, or the inner wall of the chamber is made of metal. When the temperature in the chamber is increased by heating the metal, the metal itself is vaporized by heating to generate gas. In addition, the gas generated by the work material adheres to the metal as a heat source and is fixed when the chamber is cooled, and when the temperature is raised again for the next drying operation, there is a problem that the gas generated and fixed in the previous process is re-vaporized.
但是,如果將鹵素燈用作熱源,則具有防止熱源本身產生氣體的優點,具有作業物產生的氣體不附着於熱源的優點。另外,具有之前工序產生的氣體不對下一工序產生的影響的優點。而且,鹵素燈以部件形態提供,因而如果燈在使用期間毀損或發生瑕疵,則具有更換容易的優點,因而極大提高了腔室的維護效率。However, if a halogen lamp is used as a heat source, it has the advantage of preventing the heat source itself from generating gas, and has the advantage that the gas generated by the work object does not adhere to the heat source. In addition, there is an advantage that the gas generated in the previous step does not affect the next step. Moreover, the halogen lamp is provided in the form of parts, so if the lamp is damaged or defective during use, it has the advantage of easy replacement, thus greatly improving the maintenance efficiency of the chamber.
如果參照第2圖,該鹵素燈10可以沿着腔室的內壁,設置既定間隔地配置,使得燈產生的熱可以均等地傳遞到作業物的表面。或者,為了向作業物的表面均等地傳遞熱,也可以根據作業物的形狀製作鹵素燈的形狀。Referring to FIG. 2, the
鹵素燈10為了防止燈的毀損,可以每個燈分別具備石英(Qiarts)罩,以便不妨礙釋放熱。In order to prevent damage to the lamp, the
如果參照第2圖,該工序腔室可以在門側的腔室本體具備可供鹵素燈一端部固定的固定壁30,以便鹵素燈與加載中的製品不接觸。Referring to FIG. 2, the process chamber may be provided with a fixing
在本發明的一個實施例中,工序腔室的門可以與腔室本體以鉸鏈方式結合,也可以在能夠確認作業狀態的門上配備透視窗。In one embodiment of the present invention, the door of the process chamber may be hingedly combined with the chamber body, or a perspective window may be provided on the door that can confirm the working state.
用於真空乾燥的作業物移送到預定的工序腔室後,托盤可以支撐、加載作業物,如移送傳輸機、擱板那樣包括多樣種類。After the work items for vacuum drying are transferred to the predetermined process chamber, the tray can support and load the work items, including various types such as transfer conveyors and shelves.
如果參照第2圖,該工序腔室100可以具備能夠在內部加載作業物的托盤20。該工序腔室為了容易地加載作業物,可以在左右側內壁配備軌道40和支架50。另外,可以配備與真空管線400連接的排氣口420。Referring to FIG. 2, the
在本發明的一個實施例中,該一個以上的工序腔室100為大小和形狀不同的兩個腔室,兩個腔室可以同時或各自獨立的調節真空及加熱。In an embodiment of the present invention, the one or
如果參照第2圖,該腔室為大小相異的兩個腔室,兩個腔室中作為一個腔室的第一腔室110可以為六面體,作為另一個腔室的第二腔室120可以為圓筒形。例如,如果是大小較小的作業物,可以使用六面體的腔室,如果是大小較大的作業物,也可以使用圓筒形的腔室,因而具有可以根據作業物的大小和形狀、加熱溫度而選擇適當的腔室形狀的優點,由於可以驅動兩個腔室,因而具有增進作業效率性、節省時間等的優點。If referring to FIG. 2, the chamber is two chambers of different sizes, and the
在本發明的一個實施例中,該工序腔室100可以具備感知腔室溫度的多個熱電偶(thermocouple)。該熱電偶中的一部分可以配置得能夠調節位置。In one embodiment of the present invention, the
例如,當一個工序腔室包括6個熱電偶時,可以配置得能夠靈活地調節2個熱電偶的位置。為了提高準確性和效率性,可以考慮與作業物的距離,配置熱電偶的位置,測量腔室內的溫度。For example, when a process chamber includes 6 thermocouples, it can be configured to flexibly adjust the position of 2 thermocouples. In order to improve accuracy and efficiency, the distance from the work object can be considered, the position of the thermocouple is configured, and the temperature in the chamber is measured.
如果參照第5圖,本發明的一個實施例提供一種腔室監控方法,其特徵在於,調節在內部配備有多個鹵素燈的工序腔室的真空和溫度S100,包括光致發光分析儀:(SP-OES:Self Plasma Optical Emission Spectroscope)和四極質譜儀(QMS:quadrupole mass spectrometer)的氣體感知部分析工序腔室內釋放的成分S200,控制部實時告知所分析的成分並進行控制S300。If referring to FIG. 5, an embodiment of the present invention provides a chamber monitoring method, which is characterized by adjusting the vacuum and temperature S100 of a process chamber equipped with a plurality of halogen lamps inside, including a photoluminescence analyzer: ( The gas sensing part of SP-OES: Self Plasma Optical Emission Spectroscope) and quadrupole mass spectrometer (QMS: quadrupole mass spectrometer) analyzes the component S200 released in the process chamber, and the control part notifies the analyzed component in real time and controls S300.
如果參照第1圖,在本發明的一個實施例中,該光致發光分析儀210和四極質譜儀220可以分別配置於從該工序腔室100與真空泵500之間的真空管線400分支出多個的各個真空管線400,以便能夠控制分析儀的真空度。而且,即使在配置非色散紅外傳感器(圖上未示出)的情況下,也可以配置於不同於該分支真空管線的真空管線400,以便能夠控制其真空度。If referring to FIG. 1, in one embodiment of the present invention, the
可以配置有用於使連接於該工序腔室100及真空泵500的真空管線400開閉的一個以上的閥門410。One or more valves 410 for opening and closing the
可以配置配置於與工序腔室鄰接的真空管線的第一閥門412並進行控制,可以配置配置於與真空泵鄰接的真空管線的第三閥門418並進行控制。控制部可以各自獨立地調節該閥門,調節工序腔室的真空。The
另外,在與各個氣體分析儀鄰接的真空管線上可以配置第二閥門414、416並進行控制。例如、在與光致發光分析儀鄰接的真空管線上可以配置第二閥門414並進行控制,在與四極質譜儀鄰接的真空管線上可以配置第二閥門416並進行控制。此時,配管內的壓力因無法運轉而達到預先設置的壓力值時,可以控制第二閥門中達到預先設置的壓力值的第二閥門,自動調節為關閉(off)狀態。In addition,
該閥門為了保持真空,防止分析儀等裝備毀損,控制部可以獨立地調節並控制是十分重要的。In order to maintain the vacuum and prevent damage to the analyzer and other equipment, it is very important that the control section can independently adjust and control.
在本發明的一個實施例中,控制部300可以比較光致發光分析儀210分析的成分的峰值與四極質譜儀220分析的成分的質量值,分析工序腔室100內的樣品釋放的氣體的種類和量。In one embodiment of the present invention, the
更具體而言,該控制部300,可以在該光致發光分析儀210以工序腔室內的樣品發生的成分的電漿光圖像的峰值為基礎,存儲關於特定元素的數據,存儲該四極質譜儀220檢測的成分的質量值的數據後,分析該數據,實時告知腔室內釋放的成分。另外,當氣體分析儀進一步包括非色散紅外傳感器時,該控制部可以進一步包括監控非色散紅外傳感器檢測的成分的濃度的步驟,分析關於氣體的種類和量的數據,實時告知腔室內釋放的成分。More specifically, the
此時,電漿光圖像的峰值的個數根據工序變化也可以存在多個、數十個至數千個。At this time, the number of peaks of the plasma light image may vary from process to process, and there may be a plurality of tens to thousands.
光致發光分析儀可以檢測關於構成電漿光圖像的峰值的特定元素的數據,例如可以檢查關於種類和量的數據。The photoluminescence analyzer can detect data on specific elements constituting the peak of the plasma light image, and for example, can check data on types and amounts.
四極質譜儀可以檢測所檢測的成分的質量值的數據。The quadrupole mass spectrometer can detect the data of the mass value of the detected component.
控制部可以比較與光圖像的峰值的數據對應的質量值的數據,分析所釋放的成分。關於該分析的成分的數據可以顯示於控制部的顯示部。如果參考第3圖,在光圖像的峰值中分析H和0H,在對應的質量值中如果檢測為18,則釋放的成分可以分析為水(H2 O)。The control unit may compare the data of the quality value corresponding to the data of the peak value of the light image, and analyze the released components. The data on the analyzed components can be displayed on the display unit of the control unit. If referring to Figure 3, H and 0H are analyzed in the peak of the light image, and if it is detected as 18 in the corresponding quality value, the released component can be analyzed as water (H 2 O).
四極質譜儀只分析質量值,光致發光分析儀以各個元素進行分析,因而在只利用兩者之一的設備進行分析時,只能根據分析者的判斷來分析氣體的種類,因而分析的準確度會減小。即,利用光致發光分析儀進行分析時,H成分檢測量如果急劇上升,則存在無法獲知是因為H2 0還是因為其他成分的問題。但是,由於應用兩種分析儀,因而使分析儀各自的分析數據相互對應並可以實時實現準確的氣體分析,具有可以迅速、準確地對此採取措施的優點。The quadrupole mass spectrometer only analyzes the mass value, and the photoluminescence analyzer analyzes each element. Therefore, when only one of the two devices is used for analysis, the type of gas can only be analyzed according to the judgment of the analyst, so the analysis is accurate The degree will decrease. That is, when the analysis is performed by a photoluminescence analyzer, if the detection amount of the H component rises abruptly, there is a problem that it is impossible to know whether it is H 2 0 or another component. However, since two kinds of analyzers are used, the respective analysis data of the analyzers correspond to each other and an accurate gas analysis can be realized in real time, which has the advantage that measures can be taken quickly and accurately.
另外,一氧化碳(CO)、二氧化碳(CO2 )、二氧化硫(SO2 )、一氧化氮(NO)、二氧化氮(NO2 )、氨氣(NH3 )、氯化氫(HC1)、氟化氫(HF)、甲烷(CH4 )、水蒸氣(H2 O)等氣體具有固定的紅外線吸收波長,因而當應用非色散紅外傳感器時,可以感知特定氣體的濃度。如果應用非色散紅外傳感器,並應用四極質譜儀和光致發光分析儀之一,則可以實時提高氣體分析的準確性。或者,如果全部應用非色散紅外傳感器、四極質譜儀、光致發光分析儀,則可以進一步提高氣體分析的準確性,具有可以迅速、準確地對此採取措施的優點。In addition, carbon monoxide (CO), carbon dioxide (CO 2 ), sulfur dioxide (SO 2 ), nitric oxide (NO), nitrogen dioxide (NO 2 ), ammonia gas (NH 3 ), hydrogen chloride (HC1), hydrogen fluoride (HF) , Methane (CH 4 ), water vapor (H 2 O) and other gases have a fixed infrared absorption wavelength, so when applying a non-dispersive infrared sensor, the concentration of a specific gas can be sensed. If a non-dispersive infrared sensor is used, and one of a quadrupole mass spectrometer and a photoluminescence analyzer is used, the accuracy of gas analysis can be improved in real time. Or, if all non-dispersive infrared sensors, quadrupole mass spectrometers, and photoluminescence analyzers are used, the accuracy of gas analysis can be further improved, and it has the advantage that measures can be taken quickly and accurately.
控制部算出各個峰值的水平(level)與各個質量值是否與預先設置的正常數值範圍相應,當不與正常範圍相應時,判斷為氣體釋放到真空腔室,當與正常數值相應時,判斷為氣體未釋放到真空腔室。The control unit calculates whether each peak level and each quality value correspond to the preset normal value range. When it does not correspond to the normal range, it is determined that the gas is released into the vacuum chamber. When it corresponds to the normal value, it is determined as The gas is not released into the vacuum chamber.
如果參照第4圖,在本發明的一個實施例中,該控制部300可以具備:實時顯示信息的顯示部310;及警報發生部320,其基於預先設置的信息,在發生異常信息時告知警告音。Referring to FIG. 4, in one embodiment of the present invention, the
控制部如果判斷為氣體正在釋放,則可以在顯示部310顯示信息並告知警告音。該顯示部可以顯示腔室的溫度、成分分析數據及關於異常標示的信息。If the control unit determines that the gas is being released, it may display a message on the
如果參照第4圖,在本發明的一個實施例中,該控制部300可以進一步包括:腔室調節部330,其調節腔室的真空和溫度;分析儀調節部340,其確認光致發光分析儀210與四極質譜儀220有無異常,各自獨立地調節是否運轉。If referring to FIG. 4, in one embodiment of the present invention, the
該控制部300的腔室調節部基於預先設置的信息,在發生異常信息時控制工序腔室的運轉,分析儀調節部確認氣體分析儀有無異常,各自獨立地控制是否運轉。因為可以獨立地控制兩個以上的分析儀,因而當某一分析儀發生異常時,控制使得其餘一個以上的分析儀運轉,具有使得可以持續分析的優點。The chamber adjustment unit of the
本發明的權利範圍由申請專利範圍載的事項決定,申請專利範圍中使用的括號並非為了選擇性限定而記載,而是為了讓構成要素更明確而使用的,括號內的記載也應解釋為必需的構成要素。The scope of rights of the present invention is determined by the matters contained in the scope of patent application. The brackets used in the scope of patent application are not described for selective limitation, but are used to make the constituent elements clearer. The description in parentheses should also be interpreted as necessary Constituent elements.
10:鹵素燈20:托盤
30:固定壁100:工序腔室
110:第一腔室120:第二腔室
200:氣體感知部210:光致發光分析儀
220:四極質譜儀300:控制部
310:顯示部320:警報發生部
330:腔室調節部340:分析儀調節部
400:真空管線412、414、416、418:閥門
500:真空泵10: halogen lamp 20: tray
30: fixed wall 100: process chamber
110: first chamber 120: second chamber
200: Gas sensing part 210: Photoluminescence analyzer
220: quadrupole mass spectrometer 300: control department
310: Display unit 320: Alarm generation unit
330: chamber adjustment section 340: analyzer adjustment section
400:
第1圖根據本發明一個實施例,顯示了各構成。 第2圖顯示了本發明一個實施例的真空腔室。 第3圖顯示了本發明一個實施例的光致發光分析儀和四極質譜儀的數據。 第4圖顯示了本發明一個實施例的控制部的構成。 第5圖顯示本發明一個實施例的腔室監控方法的順序圖。Figure 1 shows the components according to an embodiment of the present invention. Figure 2 shows a vacuum chamber according to an embodiment of the invention. Figure 3 shows data of a photoluminescence analyzer and quadrupole mass spectrometer according to an embodiment of the present invention. Fig. 4 shows the configuration of the control unit according to an embodiment of the present invention. Figure 5 shows a sequence diagram of a chamber monitoring method according to an embodiment of the invention.
無。no.
10:鹵素燈 10: Halogen lamp
20:托盤 20: tray
30:固定壁 30: fixed wall
100:工序腔室 100: process chamber
110:第一腔室 110: the first chamber
120:第二腔室 120: Second chamber
200:氣體感知部 200: Gas Sensing Department
210:光致發光分析儀 210: Photoluminescence analyzer
220:四極質譜儀 220: quadrupole mass spectrometer
300:控制部 300: Control Department
310:顯示部 310: Display
320:警報發生部 320: Alarm occurrence department
330:腔室調節部 330: Chamber adjustment section
340:分析儀調節部 340: Analyzer adjustment section
400:真空管線 400: vacuum line
412、414、416、418:閥門 412, 414, 416, 418: Valve
500:真空泵 500: vacuum pump
Claims (19)
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