KR20070028057A - Vacuum processing device for use in semiconductor manufacturing process - Google Patents

Vacuum processing device for use in semiconductor manufacturing process Download PDF

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KR20070028057A
KR20070028057A KR1020050083221A KR20050083221A KR20070028057A KR 20070028057 A KR20070028057 A KR 20070028057A KR 1020050083221 A KR1020050083221 A KR 1020050083221A KR 20050083221 A KR20050083221 A KR 20050083221A KR 20070028057 A KR20070028057 A KR 20070028057A
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vacuum
gas
semiconductor manufacturing
manufacturing process
pump
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정이하
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삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G01N21/67—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using electric arcs or discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

A vacuum processing apparatus for a semiconductor fabrication is provided to minimize the failure of a wafer by using a detecting unit capable of detecting leakage gas of a vacuum line in real time. A vacuum processing apparatus for a semiconductor fabrication includes a vacuum chamber, a vacuum pump for keeping the vacuum chamber in a vacuum state, a vacuum line for connecting the vacuum chamber with the vacuum pump, and a detecting unit. The detecting unit(40) is used for detecting the existence of predetermined gas in the vacuum line. The detecting unit includes a detecting sensor of an ICP-OES(Inductively Coupled Plasma-Optical Emission Spectrometer).

Description

반도체 제조 공정용 진공 처리 장치{Vacuum Processing Device for use in Semiconductor Manufacturing Process}Vacuum Processing Device for Semiconductor Manufacturing Process

도 1은 본 발명에 따른 진공 처리 장치를 도시하고 있다.1 shows a vacuum processing apparatus according to the present invention.

도 2는 본 발명에 따른 감지장치에 대한 블록도이다.2 is a block diagram of a sensing device according to the present invention.

*도면의 부호 설명** Explanation of symbols in drawings *

40: 감지장치40: sensing device

42: 감지센서42: detection sensor

본 발명은 진공 처리 장치에 관한 것으로, 특히 반도체 제조 공정용 진공 처리 장치에 관한 것이다.TECHNICAL FIELD This invention relates to a vacuum processing apparatus. Specifically, It is related with the vacuum processing apparatus for semiconductor manufacturing processes.

반도체 제조 공정 중 화학 기상 증착( CVD: Chemical Vapor Deposition) 공정에서는 일정한 저압의 조건 아래서 웨이퍼에 막질이 형성되기 때문에 진공챔버를 진공상태로 만드는 것이 상당히 중요하다.In the chemical vapor deposition (CVD) process of the semiconductor manufacturing process, it is very important to make the vacuum chamber into a vacuum state because the film is formed on the wafer under a constant low pressure condition.

화학기상증착 공정은 적층될 물질을 포함하는 화학물질과 기타 반응가스들을 진공챔버로 주입하고, 에너지원에 따라 가열이나 플라즈마 또는 자외선으로 적층될 물질들을 포함하는 화학물질과 반응 가스 간의 화학반응을 유도한다. 그 결과로 적층될 물질들이 웨이퍼 상에 증착되도록 한다. 상기 적층될 화학물질의 가스 이외의 불순물 가스가 유입되는 경우 공정상의 적층에 문제가 발생하게 된다. 따라서 반도체 장치의 수율이 저하되거나 규소와 산소의 반응에 의하여 생성된 미세한 SiO 가루가 발생된다. 이런 미세한 SiO 가루는 웨이퍼 상에 적층되어 팬턴의 정확한 형성을 방해한다. The chemical vapor deposition process injects chemicals and other reactive gases containing the material to be deposited into the vacuum chamber and induces a chemical reaction between the chemicals and the reactive gases including the materials to be deposited by heating or plasma or ultraviolet light, depending on the energy source. do. The result is that the materials to be deposited are deposited on the wafer. If impurity gas other than the gas of the chemical to be deposited is introduced, problems in the process stacking may occur. Therefore, the yield of the semiconductor device is reduced or fine SiO powder generated by the reaction of silicon and oxygen is generated. These fine SiO powders are deposited on the wafer and hinder the exact formation of the pantone.

진공펌프는 이러한 불순물로 작용할 수 있는 불순물 가스를 제거하게 된다. 그러나 진공펌프의 가동으로 불순물가스를 제거하더라도 진공배관내에 존재할 수 있는 불순물 가스에 대한 대책이 없다. 이러한 진공배관내에 존재하는 불순물 가스가 진공챔버로 역유입된다면 반도체 제조 공정에 불량요소가 된다. The vacuum pump removes impurity gas that can act as such impurities. However, even if the impurity gas is removed by the operation of the vacuum pump, there is no countermeasure against the impurity gas that may exist in the vacuum pipe. If impurity gas existing in such a vacuum pipe flows back into the vacuum chamber, it becomes a defect in the semiconductor manufacturing process.

종래 기술은 진공배관내의 가스를 감지하지 않고 있다. 즉, 종래기술은 진공배관 내에 존재할 수 있는 불순물가스가 반도체 제조 공정시에 역유입 될 가능성을 감지할 수 없다. 이 때문에 이러한 불순물 가스로 야기되는 웨이퍼 불량은 반도체 제조 공정이 끝난 후에야 확인해야 하는 문제점이 발생한다. The prior art does not sense the gas in the vacuum pipe. That is, the prior art cannot detect the possibility that impurity gas which may exist in the vacuum pipe is reversed in the semiconductor manufacturing process. For this reason, the problem of wafer defects caused by such impurity gas should be confirmed only after the semiconductor manufacturing process is completed.

본 발명은 상술한 문제를 해결하기 위하여 제안된 것으로, 본 발명의 목적은 진공배관내의 가스를 감지하는 진공 처리 장치를 제공하는데 있다.The present invention has been proposed to solve the above problems, and an object of the present invention is to provide a vacuum processing apparatus for detecting a gas in a vacuum pipe.

본 발명에 따른 반도체 제조 공정의 진공 처리 장치는 진공챔버; 상기 진공챔버를 진공상태로 유지하는 진공펌프; 상기 진공챔버와 상기 진공펌프를 연결하는 진공배관; 및 상기 진공배관내의 가스를 감지하는 감지 장치를 포함한다.Vacuum processing apparatus of the semiconductor manufacturing process according to the present invention comprises a vacuum chamber; A vacuum pump which maintains the vacuum chamber in a vacuum state; A vacuum pipe connecting the vacuum chamber and the vacuum pump; And a sensing device for sensing a gas in the vacuum pipe.

이 실시예에 있어서, 상기 감지 장치는 상기 진공 배관내에 가스가 존재할 때 경고음을 내거나 모니터링을 해주는 장치를 포함하는 것을 특징으로 한다.In this embodiment, the sensing device is characterized in that it comprises a device for beeping or monitoring the presence of gas in the vacuum pipe.

이 실시예에 있어서, 상기 감지 장치는 상기 반도체 제조 공정 동작이 제어 되도록 상기 진공배관내에 가스가 존재함을 외부로 알려주는 것을 특징으로 한다.In this embodiment, the sensing device is characterized in that it informs the outside of the presence of gas in the vacuum pipe to control the operation of the semiconductor manufacturing process.

이 실시예에 있어서, 상기 감지 장치는 ICP-OES( Inductively Coupled Plasma- Optical Emission Spectrometer)의 감지센서를 포함하는 것을 특징으로 한다.In this embodiment, the sensing device is characterized in that it comprises a sensor of the Inductively Coupled Plasma-Optical Emission Spectrometer (ICP-OES).

이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있도록 본 발명의 실시예를 첨부된 도면을 참조하여 설명한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention.

도 1은 본 발명에 따른 진공 처리 장치를 도시하고 있다. 본 발명에 따른 진공 처리 장치는 진공챔버(10), 진공펌프(20), 진공배관(30), 그리고 감지장치(40)를 포함하고 있다.1 shows a vacuum processing apparatus according to the present invention. Vacuum processing apparatus according to the present invention includes a vacuum chamber 10, a vacuum pump 20, a vacuum pipe 30, and a sensing device (40).

상기 진공챔버(10)는 진공펌프(20)에 의해 진공상태가 된다. 상기 진공챔버(10)은 반도체 제조 공정에 있어 웨이퍼의 박막 증착이나 식각을 하는 공정실로 제공될 수 있다. 따라서 상기 진공챔버(10)는 플라즈마 증착 장비 혹은 이온 주입 장비를 채용할 수 있다. The vacuum chamber 10 is brought into a vacuum state by the vacuum pump 20. The vacuum chamber 10 may be provided as a process chamber for depositing or etching a thin film of a wafer in a semiconductor manufacturing process. Therefore, the vacuum chamber 10 may employ plasma deposition equipment or ion implantation equipment.

상기 진공펌프(20)는 진공챔버(10)을 진공상태로 유지하는 펌프이다. 상기 진공펌프(20)에는 크게 고진공펌프와 저진공펌프로 구성되어 있다. 상기 진공펌프 (20)는 진공챔버(10)의 내부를 공정조건에 적절한 진공 상태로 만들어 유지한다. 또한 상기 진공펌프(20)는 상기 공정이 진행되는 동안 공정 가스의 화학 반응에 의해 발생되는 부산물과 미반응 가스를 배출하는 역할을 한다. The vacuum pump 20 is a pump for maintaining the vacuum chamber 10 in a vacuum state. The vacuum pump 20 is largely composed of a high vacuum pump and a low vacuum pump. The vacuum pump 20 maintains the interior of the vacuum chamber 10 in a vacuum suitable for the process conditions. In addition, the vacuum pump 20 serves to discharge by-products and unreacted gases generated by the chemical reaction of the process gas during the process.

고진공펌프에는 진공챔버의 내부를 10-2 torr 에서 10-8 torr 정도의 고진공 상태를 만들기 위해서, 오일확산 펌프, 터보분자 펌프 및 크라이오 펌프 등이 있다. 터보분자펌프는 매우 청정한 기계적 압축 펌프로, 1torr 에서 5×10-10 torr 까지 작동함으로 다양한 작업에 적용된다. 터보분자펌프는 직접 대기를 배출할 수 없으므로 보통은 로터리 펌프를 보조 펌프로 이용하거나 드라이펌프를 사용한다. 크라이오 펌프는 액체 헬률 크라이오 펌프와 헬륨 가스 크라이오 펌프가 있다. 헬륨은 순환하고 있을 뿐 거의 소비 되지 않으므로 운전 경비가 싸고 실용적이다. 저진공펌프는 진공챔버(10)의 내부를 760 torr 에서 10-2 torr 정도의 저진공 상태로 만들거나 진공챔버(10)를 고진공 상태로 만들기 위해 미리 저진공 상태로 만들기 위한 것으로, 로타리 펌프, 섭션 펌프 및 드라이 펌프 등이 있다.The high vacuum pump includes an oil diffusion pump, a turbomolecular pump, and a cryo pump to make the inside of the vacuum chamber at a high vacuum of 10 -2 torr to 10 -8 torr. Turbomolecular pumps are very clean mechanical compression pumps that operate from 1torr to 5 × 10-10 torr and are suitable for a variety of applications. Turbomolecular pumps cannot directly discharge air, so rotary pumps are usually used as auxiliary pumps or dry pumps. Cryopumps include liquid helium cryopumps and helium gas cryopumps. Helium is circulating and rarely consumed, so operating costs are low and practical. The low vacuum pump is to make the inside of the vacuum chamber 10 in a low vacuum state of about 760 torr to about 10 -2 torr or to make the vacuum chamber 10 in a low vacuum state in advance in order to make the vacuum chamber 10 a high vacuum state. A suction pump and a dry pump.

상기 진공배관(30)은 상기 진공챔버(10)과 상기 진공펌프(20)를 연결한다. 일반적으로 상기 진공펌프(20)내의 고진공펌프가 저진공펌프보다 더 상기 진공배관(30)에 더 인접하도록 배치한다.The vacuum pipe 30 connects the vacuum chamber 10 and the vacuum pump 20. In general, the high vacuum pump in the vacuum pump 20 is arranged to be closer to the vacuum pipe 30 than the low vacuum pump.

상기 감지장치(40)는 진공배관 내에 생기는 불순물 가스를 실시간으로 감지한다. 상기 감지장치(40)는 상기 진공배관(30)내에 생길 수 있는 불순물 가스를 실시간으로 모니터링 한다. 상기 감지장치(40)는 진공배관과 미세관으로 연결되어 진 다. 이 미세관을 통해 가스 입자가 들어오면, 상기 감지장치(40)내의 감지센서가 이 입자를 감지하게 된다. 감지센서로는 OES(Optical Emission Spectrometer) , Jarrell Ash ICAP 61 등이 도입될 수 있다.The sensing device 40 detects the impurity gas generated in the vacuum pipe in real time. The sensing device 40 monitors the impurity gas generated in the vacuum pipe 30 in real time. The sensing device 40 is connected to the vacuum pipe and the micro tube. When gas particles enter through the microtube, the sensor in the sensing device 40 detects the particles. OES (Optical Emission Spectrometer), Jarrell Ash ICAP 61, etc. may be introduced as the detection sensor.

도 2는 본 발명에 따른 감지장치에 대한 블록도이다. 상기 감지장치(40)는 제어부(41), 감지센서(42),모니터(43) 그리고 경고장치(44)를 포함하고 있다.2 is a block diagram of a sensing device according to the present invention. The detection device 40 includes a control unit 41, a detection sensor 42, a monitor 43, and a warning device 44.

상기 제어부(41)는 반도체 공정 전후 혹은 공정 중에 진공 처리 장치내의 진공배관(30)의 가스를 실시간으로 감지하도록 하는 감지센서(42)와 이것을 모니터링 하여 보여주는 모니터(43), 불순물 가스 경고를 제공하는 경고 장치(44) 등을 제어한다.The control unit 41 provides a detection sensor 42 to monitor the gas in the vacuum pipe 30 in the vacuum processing apparatus in real time before or after the semiconductor process and the monitor 43 which monitors and displays the impurity gas warning. The warning device 44 and the like are controlled.

상기 감지센서(42)는 진공배관(30)내의 가스를 실시간으로 감지하는 센서이다. 상기 감지센서(42)는 상기 진공배관(30) 내에 위치해 있다. 상기 감지센서(42)는 가스 입자들을 분석하는 ICP-AES를 이용한다. ICP-AES(Inductively Coupled Plasma - Atomic Emission Spectrometer)라고도 불리는 ICP-OES(Optical Emission Spectrometer)의 원리는 다음과 같다. 10,000°K의 높은 온도를 갖는 아르곤 플라즈마(Argon Plasma)를 이용하여 액상 시료를 원자화 시키고, 6,000-7,000°K의 온도를 갖는 꼬리 불꽃 부분에서 원자 방출선 및 이온 방출선을 측정하는 원리이다.The sensor 42 is a sensor that detects the gas in the vacuum pipe 30 in real time. The sensor 42 is located in the vacuum pipe (30). The sensor 42 uses ICP-AES to analyze gas particles. The principle of the ICP-OES (Optical Emission Spectrometer), also called ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometer), is as follows. It is a principle to atomize a liquid sample using an argon plasma (Argon Plasma) having a high temperature of 10,000 ° K, and to measure the atomic emission line and ion emission line in the tail flame portion having a temperature of 6,000-7,000 ° K.

상기 모니터(43)는 상기 감지센서(42)에 의해 진공배관(30)내의 가스 유무를 실시간 감지하는 것을 모니터링 해준다. 상기 모니터(43)는 상기 진공 처리 장치를 실시간으로 제어하는 정보도 함께 디스플레이 시켜준다.The monitor 43 monitors the real-time detection of the presence of gas in the vacuum pipe 30 by the detection sensor 42. The monitor 43 also displays information for controlling the vacuum processor in real time.

상기 감지센서(42)에 의해 진공배관(30)내의 가스가 감지되면, 상기 제어부 (41)는 경고장치(44)에서 경보음을 울리도록 한다.When the gas in the vacuum pipe 30 is detected by the detection sensor 42, the control unit 41 causes the warning device 44 to sound an alarm.

한편, 본 발명의 상세한 설명에서는 구체적인 실시예에 관하여 설명하였으나, 본 발명의 범위에서 벗어나지 않는 한도 내에서 여러 가지로 변형할 수 있다. 그러므로 본 발명의 범위는 상술한 실시예에 국한되어 정해져서는 안되며 후술하는 특허청구범위 뿐만 아니라 이 발명의 특허청구범위와 균등한 것들에 의해 정해져야 한다.Meanwhile, in the detailed description of the present invention, specific embodiments have been described, but various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the above-described embodiments, but should be defined by the equivalents of the claims of the present invention as well as the following claims.

본 발명에 따른 진공 처리 장치는 반도체 제조 공정상에서 진공배관 내의 누설 가스를 실시간으로 감지하는 감지장치를 구비하여 불순물 가스 유입으로 발생할 수 있는 웨이퍼 불량을 최소화하게 된다.The vacuum processing apparatus according to the present invention includes a sensing device that detects a leaking gas in a vacuum pipe in real time in a semiconductor manufacturing process to minimize wafer defects that may occur due to inflow of impurity gas.

Claims (4)

반도체 제조 공정의 진공 처리 장치에 있어서,In the vacuum processing apparatus of the semiconductor manufacturing process, 진공챔버;Vacuum chamber; 상기 진공챔버를 진공상태로 유지하는 진공펌프;A vacuum pump which maintains the vacuum chamber in a vacuum state; 상기 진공챔버와 상기 진공펌프를 연결하는 진공배관; 및 A vacuum pipe connecting the vacuum chamber and the vacuum pump; And 상기 진공배관내의 가스를 감지하는 감지 장치를 포함하는 진공 처리 장치.And a sensing device for sensing a gas in the vacuum pipe. 제 1 항에 있어서,The method of claim 1, 상기 감지 장치는 상기 진공 배관내에 가스가 존재할 때 경고음을 내거나 모니터링을 해주는 장치를 포함하는 것을 특징으로 하는 진공 처리 장치.The sensing device comprises a device for beeping or monitoring when there is gas in the vacuum pipe. 제 1 항에 있어서,The method of claim 1, 상기 감지 장치는 상기 반도체 제조 공정 동작이 제어 되도록 상기 진공배관내에 가스가 존재함을 외부로 알려주는 것을 특징으로 하는 진공 처리 장치.And the sensing device informs the outside of the presence of gas in the vacuum pipe to control the operation of the semiconductor manufacturing process. 제 1 항에 있어서,The method of claim 1, 상기 감지 장치는 ICP-OES( Inductively Coupled Plasma- Optical Emission Spectrometer)의 감지센서를 포함하는 것을 특징으로 하는 진공 처리 장치.The sensing device comprises a vacuum sensor of the Inductively Coupled Plasma-Optical Emission Spectrometer (ICP-OES).
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020096360A1 (en) * 2018-11-07 2020-05-14 (주)코미코 Chamber monitoring device and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020096360A1 (en) * 2018-11-07 2020-05-14 (주)코미코 Chamber monitoring device and method

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