TW202017310A - 低雜訊放大器 - Google Patents

低雜訊放大器 Download PDF

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TW202017310A
TW202017310A TW108111040A TW108111040A TW202017310A TW 202017310 A TW202017310 A TW 202017310A TW 108111040 A TW108111040 A TW 108111040A TW 108111040 A TW108111040 A TW 108111040A TW 202017310 A TW202017310 A TW 202017310A
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low noise
noise amplifier
center frequency
item
inverter
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TWI692198B (zh
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楊開拓
振財 文
德里希 康納
潔生 紀
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台達電子國際（新加坡）私人有限公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H19/00—Networks using time-varying elements, e.g. N-path filters
    • H03H19/004—Switched capacitor networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1638—Special circuits to enhance selectivity of receivers not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/375—Circuitry to compensate the offset being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H2210/00—Indexing scheme relating to details of tunable filters
    • H03H2210/02—Variable filter component
    • H03H2210/025—Capacitor

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Abstract

本案提供一種低雜訊放大器，包含輸入端、輸出端、逆變器、複數個開關電容單元及反饋電感。逆變器電連接於輸入端與輸出端之間。每一開關電容單元係與逆變器並聯連接，且包含相互串聯連接之開關及電容。反饋電感與逆變器並聯連接。

Description

低雜訊放大器
本案係關於一種低雜訊放大器，尤指一種具自校正頻偏功能的低雜訊放大器。
傳統接收器前端需要外部之表面聲波(surface acoustic wave, SAW)濾波器來濾除阻滯與干擾，然而，表面聲波濾波器的片外元件(off-chip component)通常體積較大並缺乏可調性，且較為昂貴。為減少成本及組成元件，以強化整合及系統表現，不具表面聲波濾波器的接收器前端已被廣泛研究與使用，但絕大多數不具表面聲波濾波器的接收器前端係專注於頻率低於3 GHz的應用，而不適用於高頻領域，例如802.11ac 無線區域網路(wireless local area network, WLAN)。再者，無處不在的寄生效應(例如寄生電容)使得實際工作頻率與預期有所不同，尤其在高頻環境下，工作頻率將大幅往低頻偏移。
因此，如何發展一種可改善上述習知技術之低雜訊放大器，實為目前迫切之需求。
本案之目的在於提供一種低雜訊放大器，於低雜訊放大器中，反饋電感與逆變器及複數個開關電容單元並聯連接，以利用反饋電感平衡寄生電容之影響，進而使低雜訊放大器之工作頻率維持與複數個開關電容單元之中心頻率相同，藉此達成自校正頻偏功能，並使低雜訊放大器可工作在高頻。
為達上述目的，本案提供一種低雜訊放大器，包含輸入端、輸出端、逆變器、複數個開關電容單元及反饋電感。逆變器電連接於輸入端與輸出端之間。每一開關電容單元係與逆變器並聯連接，且包含相互串聯連接之開關及電容。反饋電感與逆變器並聯連接。
體現本案特徵與優點的一些典型實施例將在後段的說明中詳細敘述。應理解的是本案能夠在不同的態樣上具有各種的變化，其皆不脫離本案之範圍，且其中的說明及圖示在本質上係當作說明之用，而非架構於限制本案。
第1圖係為本案較佳實施例之低雜訊放大器之電路結構示意圖，第2圖係為顯示第1圖所示之複數個開關的占空比的示意圖。如第1圖所示，低雜訊放大器1包含輸入端11、輸出端12、逆變器13、複數個開關電容單元14及反饋電感L，其中在輸入端11及輸出端12上分別具有輸入電壓Vin及輸出電壓Vout。逆變器13電連接於輸入端11與輸出端12之間。每一開關電容單元14均與逆變器13並聯連接，且包含相互串聯連接之開關(LO1、LO2…LOn)及電容(C1、C2…Cn)，其中n為大於2的整數。複數個開關電容單元14具有中心頻率fo。反饋電感L與逆變器13並聯連接。於一些實施例中，低雜訊放大器1還包含與逆變器13並聯連接之電阻R。
如第2圖所示，複數個開關LO1、LO2…LOn分別於不同時間導通，並具有相同之占空比，且複數個開關LO1、LO2…LOn之占空比總和為100%。週期時間為1/fo。舉例而言，若低雜訊放大器1包含四個開關電容單元14，則每一開關(LO1、LO2、LO3及LO4)均以25%之占空比於不同時間導通，且四個開關LO1、LO2、LO3及LO4之占空比總和為100%。
請參閱第3A及3B圖，第3A及3B圖係為第1圖所示之低雜訊放大器的等效電路結構示意圖。在理想情況下，低雜訊放大器1之工作頻率等同於複數個開關電容單元14之中心頻率fo。然而，實際上，低雜訊放大器1無可避免地包含複數個寄生電容Cp,in、Cp,out 及 Cp,f。複數個開關電容單元14可等效為相互串聯之電阻Rsw與Rp-Lp-Cp並聯電路。複數個寄生電容Cp,in、Cp,out 及 Cp,f導致工作頻率下降，尤其在低雜訊放大器1工作於高頻(例如大於5 GHz之頻率)時，工作頻率的下降更為明顯。因此，本案之低雜訊放大器1係對應利用反饋電感L來平衡寄生電容Cp,in、Cp,out 及 Cp,f的影響。由於反饋電感L與複數個開關電容單元14並聯連接，使得反饋電感L與複數個開關電容單元14的中心頻率高於頻率fo。通過具有適當電感值的反饋電感L，可平衡寄生電容Cp,in、Cp,out 及 Cp,f的影響，進而使低雜訊放大器1之工作頻率與中心頻率fo相同。藉此，可消除頻率偏移並提升低雜訊放大器1之性能。同時，反饋電感L之高品質因數(quality factor)使其本身僅產生可忽略不計的雜訊，其中反饋電感L之品質因數越高，則其等效電阻越大且所產生之雜訊越小。此外，複數個開關電容單元14之中心頻率fo可通過等式(1)進行計算，等效阻抗Z可通過等式(2)進行計算，其中s 為複數頻率。
Figure 02_image001
(1)
Figure 02_image003
(2)
第4圖係為顯示第1圖所示之低雜訊放大器與不具反饋電感之低雜訊放大器的輸入電壓、輸出電壓及反射損失的示意圖，第5圖係為顯示第1圖所示之低雜訊放大器與不具反饋電感之低雜訊放大器的雜訊指數的示意圖。第4及5圖示出了輸入電壓Vin、輸出電壓Vout、反射損失(return loss) S11及雜訊指數(noise figure) NF的模擬結果，其中，具有反饋電感L之低雜訊放大器1的模擬結果係以實線表示，並於第4圖中以不同實心符號區別各模擬結果，而不具有反饋電感L之低雜訊放大器的模擬結果係以虛線表示，並於第4圖中以不同空心符號區別各模擬結果。於此實施例中，中心頻率fo為5.5 GHz，開關電容單元14之數量為四，並於表格(一)中示出各模擬結果之中心頻率偏移及各模擬結果於中心頻率fo (5.5 GHz)的數值。如第4圖及表格(一)所示，在不具有反饋電感L之低雜訊放大器中，輸入電壓Vin及輸出電壓Vout之中心頻率均朝低頻偏移約100 MHz，反射損失S11之中心頻率偏移甚至大於100 MHz。反觀具有反饋電感L之低雜訊放大器1，其輸入電壓Vin、輸出電壓Vout及反射損失S11之中心頻率均重新回到中心頻率fo。換言之，低雜訊放大器1之輸入電壓Vin、輸出電壓Vout、反射損失S11及雜訊指數NF的中心頻率均與複數個開關電容單元14的中心頻率fo相同。此外，如第5圖及表格(一)所示，相較於不具有反饋電感L之低雜訊放大器的雜訊指數NF，具有反饋電感L之低雜訊放大器1的雜訊指數NF改善約0.2 dB。因此，低雜訊放大器1之增益及訊號雜訊比(signal-to-noise ratio, SNR)亦有所改善。
Figure 108111040-A0304-0001
 表格(一)  各模擬結果之中心頻率偏移及各模擬結果於中心頻率fo (5.5 GHz)的數值
綜上所述，本案提供一種低雜訊放大器，於低雜訊放大器中，反饋電感與逆變器及複數個開關電容單元並聯連接，以利用反饋電感平衡寄生電容之影響，進而使低雜訊放大器之工作頻率維持與複數個開關電容單元之中心頻率相同，藉此達成自校正頻偏功能，且使低雜訊放大器可工作在高頻。
須注意，上述僅是為說明本案而提出之較佳實施例，本案不限於所述之實施例，本案之範圍由如附專利申請範圍決定。且本案得由熟習此技術之人士任施匠思而為諸般修飾，然皆不脫如附專利申請範圍所欲保護者。
1:低雜訊放大器11:輸入端12:輸出端13:逆變器14:開關電容單元L:反饋電感Vin:輸入電壓Vout:輸出電壓LO1、LO2、LO3、LO4、LOn:開關C1、C2、Cn:電容fo:中心頻率R:電阻Rsw、Rp:等效電阻Lp:等效電感Cp:等效電容Z:等效阻抗Cp,in、Cp,out、Cp,f:寄生電容S11:反射損失NF:雜訊指數
第1圖係為本案較佳實施例之低雜訊放大器之電路結構示意圖。
第2圖係為顯示第1圖所示之複數個開關的占空比的示意圖。
第3A及3B圖係為第1圖所示之低雜訊放大器的等效電路結構示意圖。
第4圖係為顯示第1圖所示之低雜訊放大器與不具反饋電感之低雜訊放大器的輸入電壓、輸出電壓及反射損失的示意圖。
第5圖係為顯示第1圖所示之低雜訊放大器與不具反饋電感之低雜訊放大器的雜訊指數的示意圖。
1:低雜訊放大器
11:輸入端
12:輸出端
13:逆變器
14:開關電容單元
Vin:輸入電壓
Vout:輸出電壓
LO1、LO2、LOn:開關
C1、C2、Cn:電容
L:反饋電感
R:電阻

Claims (7)

  1. 一種低雜訊放大器，包含：              一輸入端；              一輸出端；              一逆變器，電連接於該輸入端與該輸出端之間；              複數個開關電容單元，其中每一該開關電容單元係與該逆變器並聯連接，且包含相互串聯連接之一開關及一電容；以及              一反饋電感，與該逆變器並聯連接。
  2. 如申請專利範圍第1項所述之低雜訊放大器，其中該複數個開關分別於不同時間導通。
  3. 如申請專利範圍第2項所述之低雜訊放大器，其中該複數個開關之複數個占空比均相等，且該複數個占空比之和為100%。
  4. 如申請專利範圍第1項所述之低雜訊放大器，其中該低雜訊放大器具有一工作頻率，該複數個開關電容單元具有一中心頻率。
  5. 如申請專利範圍第4項所述之低雜訊放大器，還包含複數個寄生電容，其中該複數個寄生電容導致該工作頻率降低，該反饋電感係架構於平衡該複數個寄生電容之影響，使該工作頻率等於該中心頻率。
  6. 如申請專利範圍第4項所述之低雜訊放大器，其中該低雜訊放大器之一輸入電壓、一輸出電壓、一反射損失及一雜訊指數的中心頻率均等於該複數個開關電容單元之中心頻率。
  7. 如申請專利範圍第4項所述之低雜訊放大器，其中該工作頻率及該中心頻率大於5 GHz。
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