TW202015861A - Multiple zone pad conditioning disk - Google Patents
Multiple zone pad conditioning disk Download PDFInfo
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- TW202015861A TW202015861A TW108134870A TW108134870A TW202015861A TW 202015861 A TW202015861 A TW 202015861A TW 108134870 A TW108134870 A TW 108134870A TW 108134870 A TW108134870 A TW 108134870A TW 202015861 A TW202015861 A TW 202015861A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
- B24B53/14—Dressing tools equipped with rotary rollers or cutters; Holders therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/14—Zonally-graded wheels; Composite wheels comprising different abrasives
Abstract
Description
本發明涉及墊修整盤,並且更具體地涉及與化學機械拋光工具一起使用的多區域墊修整盤。The present invention relates to pad conditioning discs, and more particularly to multi-zone pad conditioning discs for use with chemical mechanical polishing tools.
化學機械拋光(Chemical Mechanical Polishing, CMP)或平坦化是一種用於矽晶片和其他基材的拋光工藝,該工藝利用拋光墊上的拋光液及其化學和研磨劑,結合化學和機械效果,用於去除表面的多餘材料和用於獲得所需的厚度的具有光滑和平坦的表面的矽晶片和其他基材。成功的 CMP 所用的拋光墊需要 佳的表面孔隙率,並且由於表面隨時間退化而趨於失去表面孔隙率。拋光墊修整盤是 CMP 技術用於建立、維護和重新創建拋光墊的 佳表面孔隙率的關鍵要素。Chemical mechanical polishing (CMP) or planarization is a polishing process used for silicon wafers and other substrates. This process uses the polishing liquid on the polishing pad and its chemical and abrasive agents, combined with chemical and mechanical effects, for Remove excess material from the surface and silicon wafers and other substrates with smooth and flat surfaces to obtain the required thickness. The polishing pads used for successful CMP require good surface porosity, and tend to lose surface porosity due to surface degradation over time. Polishing pad dressing discs are a key element of CMP technology used to establish, maintain, and recreate the excellent surface porosity of polishing pads.
本發明的一個目的涉及一種被配置為修整化學機械拋光工具的拋光墊的墊修整盤,其包括多個區域,該多個區域包括基於該多個區域的定位而選擇性地接合拋光墊的切削元件。An object of the present invention relates to a pad dressing disc configured to dress a polishing pad of a chemical mechanical polishing tool, which includes a plurality of areas including cutting that selectively engages the polishing pad based on the positioning of the plurality of areas element.
在示例性實施例中,該多個區域能夠相對於彼此移動。In an exemplary embodiment, the plurality of regions can move relative to each other.
在示例性實施例中,該多個區域能夠相對於彼此移動,使得該多個區域中的第一區域的切削元件在化學機械拋光過程中與拋光墊接觸,而該多個區域中的第二區域的切削元件不與拋光墊接觸。In an exemplary embodiment, the plurality of regions can move relative to each other so that the cutting elements of the first region of the plurality of regions are in contact with the polishing pad during chemical mechanical polishing, while the second of the plurality of regions The cutting elements in the area are not in contact with the polishing pad.
在示例性實施例中,該多個區域的第一區域包括具有一定形狀、大小、分佈和密度的顆粒金剛石,並且該多個區域的第二區域包括被塗覆在紋理化表面上的化學氣相沉積(chemical vapor deposition, CVD)金剛石膜。In an exemplary embodiment, the first region of the plurality of regions includes granular diamond having a certain shape, size, distribution, and density, and the second region of the plurality of regions includes chemical gas coated on the textured surface Phase deposition (chemical vapor deposition, CVD) diamond film.
在示例性實施例中,每個區域的切削元件是形狀、大小、分佈、密度和結構相同的金剛石或類金剛石膜,或者每個區域的切削元件是形狀、大小、分佈、密度和結構不同的金剛石。In an exemplary embodiment, the cutting elements in each region are diamond or diamond-like films with the same shape, size, distribution, density and structure, or the cutting elements in each region are different in shape, size, distribution, density and structure Diamond.
在示例性實施例中,連接裝置可操作地連接該多個區域,並且有助於該多個區域之間的獨立運動。In an exemplary embodiment, the connection device is operably connected to the plurality of regions, and facilitates independent movement between the plurality of regions.
在示例性實施例中,在墊修整盤的第一位置中,第一區域是凹陷的,並且第二區域的切削元件接觸拋光墊,並且在第二位置中,第一區域在朝向拋光墊的方向上自第二區域突出,並且第一區域的切削元件接觸拋光墊。In an exemplary embodiment, in the first position of the pad conditioning disk, the first area is recessed, and the cutting elements of the second area contact the polishing pad, and in the second position, the first area is facing toward the polishing pad The direction protrudes from the second area, and the cutting elements of the first area contact the polishing pad.
在示例性實施例中,墊修整盤通過可動連接件被連接至化學機械拋光工具的墊修整器臂,致動器促使第一區域與至少另一個區域之間的獨立運動。In an exemplary embodiment, the pad dressing disc is connected to the pad dresser arm of the chemical mechanical polishing tool through a movable connection, and the actuator promotes independent movement between the first area and at least another area.
在示例性實施例中,第一區域通過第一可動連接件被連接至化學機械拋光工具的墊修整器臂,第二區域通過第二可動連接件被連接至墊修整器臂。沿 Z 軸致動第一可動連接件中的至少一個以促使第一區域相對於第二區域的垂直獨立運動,沿 Z 軸致動第二可動連接件以促使第二區域相對於第一區域的垂直獨立運動。In an exemplary embodiment, the first area is connected to the pad conditioner arm of the chemical mechanical polishing tool through the first movable connection, and the second area is connected to the pad conditioner arm through the second movable connection. Actuate at least one of the first movable links along the Z axis to promote vertical independent movement of the first area relative to the second area, and actuate the second movable links along the Z axis to promote the second area relative to the first area Vertical independent movement.
在示例性實施例中,該多個區域是以下中的至少一種:圓形、環形、徑向餅形、螺旋形筋、矩形或三角形切割區(cutouts)以及模。In an exemplary embodiment, the plurality of regions are at least one of the following: circular, circular, radial pie-shaped, spiral ribs, rectangular or triangular cutouts, and dies.
另一目的涉及一種化學機械拋光工具,其包括:被放置在台板上的拋光墊,該拋光墊被配置為用於拋光基材;拋光液輸送臂,該拋光液輸送臂被配置為在墊修整過程中輸送拋光液;以及修整器元件,該修整器元件包括:被連接到化學機械拋光工具的機器底座的墊修整器臂,及被連接到墊修整器臂的墊修整盤,墊修整盤具有相至少兩個區域,其對於彼此被啟動以選擇性地接合拋光墊。Another object relates to a chemical mechanical polishing tool, which includes: a polishing pad placed on a platen, the polishing pad configured to polish a substrate; a polishing liquid conveying arm, the polishing liquid conveying arm configured to be placed on a pad Delivery of polishing fluid during the dressing process; and dresser elements including: pad dresser arms connected to the machine base of the chemical mechanical polishing tool, and pad dresser disks connected to the pad dresser arm, pad dresser disks There are at least two regions of phase that are activated with respect to each other to selectively engage the polishing pad.
在示例性實施例中,該至少兩個區域每個區域包括切削元件,該切削元件形狀、大小、分佈、密度和結構相同或形狀、大小、分佈、密度和結構不同。In an exemplary embodiment, each of the at least two regions includes cutting elements having the same shape, size, distribution, density, and structure or different shapes, sizes, distribution, density, and structure.
在示例性實施例中,化學機械拋光工具包括啟動和停用區域轉換的元件。In an exemplary embodiment, the chemical mechanical polishing tool includes elements that activate and deactivate zone switching.
在示例性實施例中,墊修整器臂包括被連接至墊修整元件的相應區域的兩個或多個獨立機構。In an exemplary embodiment, the pad conditioner arm includes two or more independent mechanisms connected to respective areas of the pad dressing element.
另一個目的涉及一種用於在化學機械拋光過程中修整拋光墊的方法,該方法包括:選擇性地啟動具有多個區域的墊修整盤中的選定區域,該多個區域中的每個區域具有用於修整拋光墊的切削元件,其中用於修整拋光墊的區域的選擇取決於多個因素,以及向墊修整盤施加下壓力,使選定區域的切削元件與拋光墊接觸,但其他區域的切削元件不與拋光墊接合。Another object relates to a method for dressing a polishing pad during a chemical mechanical polishing process, the method comprising: selectively activating selected areas in a pad conditioning disk having a plurality of areas, each of the plurality of areas having Cutting elements for dressing polishing pads, where the selection of the area for dressing the polishing pad depends on a number of factors, as well as the application of downforce to the pad dressing disc to bring the cutting elements of the selected area into contact with the polishing pad, but the cutting of other areas The element does not engage the polishing pad.
在示例性實施例中,該多個因素包括拋光配方、拋光專案、化學機械拋光工具的使用時間、由化學機械拋光工具拋光的多個晶片的間隔、定義的計畫表、拋光墊的優表面孔隙度和來自動態回饋系統的回饋。In the exemplary embodiment, the plurality of factors include a polishing recipe, a polishing project, a usage time of a chemical mechanical polishing tool, an interval of a plurality of wafers polished by the chemical mechanical polishing tool, a defined plan table, and an excellent surface of the polishing pad Porosity and feedback from dynamic feedback systems.
在示例性實施例中,該因素是來自動態回饋系統的回饋,該回饋包括晶片的性能、晶片與拋光墊之間的摩擦和/或拋光墊的粗糙度測量。In an exemplary embodiment, the factor is feedback from a dynamic feedback system that includes wafer performance, friction between the wafer and the polishing pad, and/or roughness measurement of the polishing pad.
在示例性實施例中,選擇用於修整拋光墊的區域的因素是修整的類型,修整的類型是原位修整時期或異位修整時期,進一步地,其中在異位元修整期間,選定區域的切削元件與拋光墊接合,而另一區域的切削元件與拋光墊脫離,並且在原位修整期間,選定區域的切削元件與拋光墊脫離接合,而另一區域的切削元件與拋光墊接合。In an exemplary embodiment, the factor for selecting the area for trimming the polishing pad is the type of trimming, and the type of trimming is the in-situ trimming period or the ex-situ trimming period. Further, during the ex-situ trimming, the selected area The cutting element is engaged with the polishing pad, while the cutting element in another area is disengaged from the polishing pad, and during in-situ dressing, the cutting element in the selected area is disengaged from the polishing pad, and the cutting element in the other area is engaged with the polishing pad.
在示例性實施例中,選擇用於修整拋光墊的區域的因素是化學機械拋光過程是否處於磨合階段或晶片加工階段,進一步地,其中在磨合階段,選定區域的切削元件與拋光墊接合,而另一區域的切削元件與拋光墊脫離,並且在晶片加工階段,選定區域的切削元件與拋光墊脫離,而另一區域的切削元件與拋光墊接合。In the exemplary embodiment, the factor for selecting the area for polishing the polishing pad is whether the chemical mechanical polishing process is in the run-in phase or wafer processing phase, further, wherein in the run-in phase, the cutting elements of the selected area are engaged with the polishing pad, and The cutting element in another area is detached from the polishing pad, and in the wafer processing stage, the cutting element in the selected area is detached from the polishing pad, and the cutting element in the other area is engaged with the polishing pad.
在示例性實施例中,選擇用於修整拋光墊的區域的因素是修整類型,修整的類型是原位修整或異位修整。In an exemplary embodiment, the factor for selecting the area for trimming the polishing pad is the type of trimming, and the type of trimming is in-situ trimming or ex-situ trimming.
在示例性實施例中,基於該多個因素中的一個或多個因素的改變,選擇性地啟動墊修整盤的不同區域。選擇性地啟動不同區域包括致動墊修整器臂的可動連接件以調節選定區域相對於該不同區域的位置。In an exemplary embodiment, based on a change in one or more of the plurality of factors, different regions of the pad conditioning disc are selectively activated. Selectively activating different regions includes actuating the movable connector of the pad conditioner arm to adjust the position of the selected region relative to the different regions.
結合附圖,根據以下詳細公開,將更容易理解和充分理解構造和操作的前述特徵和其他特徵。The foregoing and other features of construction and operation will be easier to understand and fully understand in light of the following detailed disclosure in conjunction with the drawings.
相關申請案的交叉引用: 本申請要求於 2018 年 09 月 26 日提交的名稱為「具有多個區域的墊修整盤(Pad Conditioning Disk with Multiple Zones)」的美國臨時申請 No. 62/737,078 的權益和優先權。Cross-reference of related applications: This application requires the rights and priority of US Provisional Application No. 62/737,078, entitled "Pad Conditioning Disk with Multiple Zones", filed on September 26, 2018.
本文參考附圖通過示例而非限制的方式給出了所公開的裝置和方法的如下文中所描述的實施例的詳細說明。儘管示出並詳細描述了某些實施例,但是應當理解,在不脫離所附申請專利範圍的範圍的情況下,可以進行各種改變和修改。本公開的範圍絕不限於構成部件的數量、材料、形狀、相對佈置等,並且僅作為本公開的實施例的示例來公開。A detailed description of the embodiments of the disclosed apparatus and method as described below is given by way of example and not limitation with reference to the drawings. Although certain embodiments have been shown and described in detail, it should be understood that various changes and modifications may be made without departing from the scope of the appended patent applications. The scope of the present disclosure is by no means limited to the number, material, shape, relative arrangement, etc. of constituent parts, and is disclosed only as an example of an embodiment of the present disclosure.
作為詳細描述的前言,應該注意的是,如在本說明書和所附申請專利範圍書中所使用的,單數形式「一」和「該」包括複數指示物,除非上下文另外明確指出。As a preface to the detailed description, it should be noted that, as used in this specification and the appended patent application, the singular forms "a" and "the" include plural indicators unless the context clearly dictates otherwise.
簡要概述,墊修整盤是 CMP 工具的一部分,用於建立、維護和恢復 CMP 工藝中所使用的拋光墊的 佳表面孔隙率。需要使用拋光墊修整盤在拋光墊表面上執行多項任務,包括建立帶有開孔和均勻接觸區域的拋光表面,有效地去除拋光墊表面上的拋光副產物,拋光後再生新生表面,在拋光墊的整個使用壽命內保持一致的拋光墊表面,及避免產生大的拋光墊碎片。為了完成這些任務,墊修整盤的切削元件例如金剛石切削穿過拋光墊的表面。選擇用作墊修整齒的金剛石在定義墊的性能目的產生至關重要的作用,而墊的性能又決定了晶片拋光的性能,例如去除率、均勻性、凹陷度、腐蝕、缺陷、性能穩定性等。根據應用來選擇金剛石,並且金剛石是基於金剛石的尺寸、金剛石的取向以及金剛石的切削角度,例如金剛石的晶體形狀(例如,鋒利的與塊狀的)來選擇的。進一步的考量包括使金剛石尖端找平以使金剛石均勻地暴露於拋光墊、金剛石密度和其他配置參數。Briefly summarized, the pad conditioning disk is part of the CMP tool and is used to establish, maintain and restore the excellent surface porosity of the polishing pad used in the CMP process. It is necessary to use polishing pad dressing discs to perform multiple tasks on the surface of the polishing pad, including establishing a polishing surface with openings and uniform contact areas, effectively removing polishing byproducts on the surface of the polishing pad, regenerating the new surface after polishing, and polishing the pad Maintain a consistent polishing pad surface throughout the entire life span and avoid the generation of large polishing pad fragments. To accomplish these tasks, the cutting elements of the pad conditioning disk, such as diamond, cut through the surface of the polishing pad. The diamond selected as the pad dressing tooth plays a vital role in defining the performance goals of the pad, and the performance of the pad determines the performance of the wafer polishing, such as removal rate, uniformity, depression, corrosion, defects, performance stability Wait. The diamond is selected according to the application, and the diamond is selected based on the size of the diamond, the orientation of the diamond, and the cutting angle of the diamond, such as the crystal shape of the diamond (eg, sharp and bulk). Further considerations include leveling the diamond tip to expose the diamond uniformly to the polishing pad, diamond density, and other configuration parameters.
而且,隨著時間的推移,墊修整盤的金剛石齒的切削刃磨損,這導致更換墊修整盤;儘管拋光墊並未完全超出其使用壽命,但典型地會與墊修整盤一起更換。除了新的拋光墊和新的墊修整盤的費用之外,還有很多與 CMP 工具不可用相關聯的顯著性成本,以及將CMP 工具與新元件一起重新投入生產的成本。Moreover, over time, the cutting edges of the diamond teeth of the pad dressing disc wear out, which results in replacement of the pad dressing disc; although the polishing pad does not completely exceed its service life, it is typically replaced with the pad dressing disc. In addition to the cost of new polishing pads and new pad dressing discs, there are many significant costs associated with the unavailability of CMP tools, and the cost of putting CMP tools back into production with new components.
習知墊修整盤包括單一區域的金剛石齒,這些金剛石齒作為一個單元上下移動。例如,一個墊修整盤的所有金剛石都被黏結到一個底層上,就與拋光墊的相互作用而言,其充當一個單元。並非所有的金剛石都能有效地與拋光墊接合。處於相對突出位置的那些被接合並且隨著使用時間而磨損。同時,處於相對凹陷位置的那些金剛石沒有有效地與墊表面接合,並且不會隨著時間的流逝而磨損。但是,由於所有金剛石都黏結成一個零件,因此,在那些突出的金剛石的切削刃磨損時,需要更換整個零件。The conventional pad dressing disc includes a single area of diamond teeth that move up and down as a unit. For example, all diamonds of a pad conditioning disk are bonded to a bottom layer, which acts as a unit in terms of interaction with the polishing pad. Not all diamonds can be effectively bonded to polishing pads. Those in relatively protruding positions are engaged and wear out over time. At the same time, those diamonds in relatively recessed positions are not effectively engaged with the pad surface and will not wear out over time. However, since all diamonds are bonded into one part, when the cutting edges of those protruding diamonds wear out, the entire part needs to be replaced.
此外,由於單一區域設計,習知的墊修整盤在很大程度上受限於相同類型的金剛石。在許多情況下,CMP 對於墊修整工藝具有多種功能要求。例如,可能需要有效地創建表面紋理,然後對其進行維護。可以優選使用不同類型的金剛石用於產生表面紋理與用於維護表面。在這種情況下,限於僅具有一種類型的金剛石,習知墊修整盤必須使用折衷類型的金剛石來滿足兩種功能要求。結果,CMP 性能受到損害。Furthermore, due to the single-zone design, the conventional pad dressing discs are largely limited to the same type of diamond. In many cases, CMP has multiple functional requirements for the pad finishing process. For example, you may need to effectively create surface textures and then maintain them. It may be preferred to use different types of diamonds for generating surface textures and for maintaining surfaces. In this case, limited to having only one type of diamond, conventional pad dressing discs must use a compromised type of diamond to meet two functional requirements. As a result, CMP performance is impaired.
因此,希望墊修整盤盡可能長地產生並保持拋光墊的 佳表面孔隙率。根據本發明的實施例的墊修整盤包括多個區域,該多個區域被單獨地啟動,從而使一些金剛石齒被保留,而其他金剛石齒被用於修整拋光墊。並且與傳統的盤不同,可以在墊修整盤的使用壽命的後期啟動被保留的鑽石,以在墊修整盤的整個使用壽命中保持一致的切削性能。以這種方式,可以控制和/或規劃金剛石的老化,從而可以控制和/或規劃金剛石盤的老化,以延長墊修整盤的壽命,從而延長拋光墊的壽命。Therefore, it is desirable that the pad conditioning discs produce and maintain a good surface porosity of the polishing pad as long as possible. The pad dressing disc according to an embodiment of the present invention includes multiple regions that are individually activated so that some diamond teeth are retained while other diamond teeth are used to dress the polishing pad. And unlike traditional disks, retained diamonds can be activated later in the life of the pad dressing disk to maintain consistent cutting performance throughout the life of the pad dressing disk. In this way, the aging of the diamond can be controlled and/or planned, so that the aging of the diamond disk can be controlled and/or planned to extend the life of the pad dressing disk and thus the life of the polishing pad.
而且,該多個區域可以在單個墊修整盤中包括不同類型的金剛石,以增加功能及有效墊表面工程。例如,某種類型的尖銳金剛石可以用於產生期望的表面紋理的目的,並且某種類型的軟金剛石(mild diamond)可以用於在表面紋理一旦創建後即進行維護的目的。單個墊修整盤的金剛石類型之間的切換是通過墊修整盤的區域之間的相對運動來實現的。因此,根據本發明實施例的墊修整盤在同一墊修整盤內具有多個金剛石區域,以提供對拋光墊表面工程的動態控制,實現改進的 CMP 工藝性能(例如,由於凹陷度/腐蝕得到改善而缺陷更少),和延長墊修整盤和 CMP 工具的其他元件的使用壽命。Moreover, the multiple regions can include different types of diamonds in a single pad conditioning disk to increase functionality and effective pad surface engineering. For example, a certain type of sharp diamond can be used for the purpose of producing a desired surface texture, and a certain type of soft diamond (mild diamond) can be used for the purpose of maintaining the surface texture once it is created. The switching between the diamond types of the individual pad conditioning disks is achieved by the relative movement between the areas of the pad conditioning disk. Therefore, the pad dressing disc according to embodiments of the present invention has multiple diamond regions within the same pad dressing disc to provide dynamic control of the polishing pad surface engineering to achieve improved CMP process performance (eg, due to improved pitting/corrosion And fewer defects), and extend the life of the pad trimming disc and other components of the CMP tool.
現在參考附圖,圖 1A 和圖 1B 分別示出了根據本發明的實施例的 CMP 系統 10 的俯視示意圖和剖視圖。CMP 系統 10 用於 CMP 工藝。CMP 系統 10 包括拋光液輸送臂 11,輸送臂 11 被配置為在拋光過程中輸送拋光液 12。拋光液 12 可以包括含磨料的拋光漿,或可以包括無磨料的液體,其可以是反應性的。拋光墊 13 被佈置在台板 14 上,並且被配置為用於拋光基材(例如,矽晶片)。利用台板 14 來在處理過程中使拋光墊 13 旋轉,使得拋光墊 13 將被放置在拋光墊 13 上的基材的表面平坦化或對其進行拋光。拋光墊 13 是具有拋光表面的消耗品,並且可以固定到台板 14 上。基材由處理期間可旋轉地接觸基材的拋光頭 15 保持。拋光頭 15 可選地包括防止基材在拋光期間從拋光頭 15 下方移出的保持環。CMP 系統 10 還包括修整器元件,該修整器元件包括經由軸 16 可操作地連接至墊修整器臂 17 的墊修整盤 100;墊修整器臂 17 被連接到化學機械拋光工具的機器底座。軸 16 穿過 CMP 工具 10 的機器底座佈置。墊調修整器臂 16 可以繞垂直於機器底座的軸線旋轉。在示例性實施例中,通過機器底座 130 與墊修整器臂之間的軸承來助於旋轉,使得墊修整器臂 16 使墊修整盤 100 旋轉。盤 100 可以進一步以一定旋轉速度旋轉。施加向下的力以將墊修整盤 100 抵靠在拋光墊 13 上。Referring now to the drawings, FIGS. 1A and 1B respectively show a top schematic view and a cross-sectional view of a
墊修整盤 100 包括多個區域,該多個區域包括基於該多個區域的定位而選擇性地與拋光墊 13 接合的切削元件。可以相對於彼此獨立地和/或單獨地啟動區域,以選擇性地接合拋光墊 13。例如,將墊修整盤 100 上的金剛石分組為兩個或更多個區域。圖 2 示出了根據本發明實施例的具有在第一位置選擇性地接合拋光墊 13 的多個區域的墊修整盤 100 的示意圖。在所示的實施例中,墊修整盤 100 包括具有切削元件 3 的第一區域 1 和分開的具有切削元件 4 的第二區域 2。在此,第一區域 1 和第二區域 2 的切削元件 3、4 相同。切削元件 3、4 旨在切削穿過拋光墊 13,以恢復和/或保持拋光墊 13 所期望的/佳的表面孔隙率,如前文所述。切削元件 3、4 在大多數情況下是金剛石,但是也可以是其他切削元件,例如 SiC、SiO2
、陶瓷材料、類金剛石膜等。此外,切削元件還可以包括刷子或可以被用來幫助清潔和保持墊表面的其他接觸機構或由其取代。在圖 2 所示的第一位置中,與第一區域 1 相關的切削元件 3 與拋光墊 13 接合,而與第二區域 2 相關的切削元件 4 不與拋光墊 13 接合。因此,保留了切削元件 4,因為切削元件 4 不與拋光墊 13 的表面機械地接合。The
圖 3 示出了根據本發明實施例的具有在第二位置選擇性地接合拋光墊 13 的多個區域的墊修整盤 100 的示意圖。在圖 3 所示的第二位置中,第一區域 1 和第二區域 2 的位置已經改變,與第二區域 2 相關的切削元件 4 現在與拋光墊 13 接合,而與第一區域 3 相關的切削元件 3 現在不與拋光墊 13 接合。因此,至少臨時地保留了切削元件 3,因為切削元件 3 現在不與拋光墊 13 的表面機械地接合。圖 3 還示出了一種情形,其中切削元件 3 的切削刃不再有效地維持所期望的切削性能,因此啟動第二區域 2 以使切削元件 4 與拋光墊 13 主動接合,而第一區域 1 遠離拋光墊 13 移動,使得切削元件 3 不再與拋光墊 13 接合。FIG. 3 shows a schematic diagram of a
因此,墊修整盤 100 的示例性實施例包括多個區域 1、2,該多個區域的每個區域包括基於該多個區域 1、2 的定位而選擇性地與拋光墊 13 接合的切削元件 3、4。當第一區域 1 被放置為比第二區域 2 更靠近拋光墊 13 時,切削元件 3 接合拋光墊 13,如圖 2 所示。當第二區域 2 被放置為比第一區域 1 更靠近拋光墊 13 時,切削元件 4 接合拋光墊 13。因為每個區域 1、2 可以相對於彼此獨立地移動,所以可以實現區域 1、2 之間的位置改變。Therefore, an exemplary embodiment of the
可以以各種方式啟動每個區域以促進區域的移動。在示例性實施例中,通過沿 Z 軸向下推動一個或多個區域同時在其他區域上上拉來啟動這些區域。必要時,將一個或多個停用區域從拋光墊上提起,以避免在其他區域正在主動修整拋光墊時與拋光墊接合。另外,必要時可以對不同區域施加不同的向下力。可以使用各種機構來啟動各個區域。啟動機構可以是電動的、機械的或機電的。例如,可以經由馬達、電池、形狀記憶致動器例如鎳鈦合金、螺線管、磁體、一個或多個伺服馬達、一個或多個步進馬達、電活性聚合物、壓電體和開關等電力地致動該區域。可以經由彈簧、氣動元件、螺釘、液壓元件、皮帶輪、齒輪、燈、球和棘爪等機械地致動該區域。還可以使用電機構和機械機構的組合。此外,具有多個區域的墊修整盤可以是具有其自己的啟動/停用機構或控制器的獨立單元,或者可替換地,墊修整盤可以被連接到 CMP 系統 10,啟動/停用通過 CMP 系統 10 進行傳遞。Each zone can be activated in various ways to facilitate movement of the zone. In an exemplary embodiment, these regions are activated by pushing one or more regions down along the Z axis while pulling up on other regions. If necessary, lift one or more deactivated areas from the polishing pad to avoid engaging the polishing pad when other areas are actively dressing the polishing pad. In addition, different downward forces can be applied to different areas if necessary. Various organizations can be used to activate various regions. The starting mechanism can be electric, mechanical or electromechanical. For example, via motors, batteries, shape memory actuators such as nitinol, solenoids, magnets, one or more servo motors, one or more stepper motors, electroactive polymers, piezoelectric bodies and switches, etc. The area is electrically actuated. This area can be mechanically actuated via springs, pneumatic elements, screws, hydraulic elements, pulleys, gears, lights, balls, pawls, etc. A combination of electrical and mechanical mechanisms can also be used. In addition, the pad conditioning disk with multiple areas can be a separate unit with its own activation/deactivation mechanism or controller, or alternatively, the pad conditioning disk can be connected to the
再參考圖 2 - 3,連接裝置 5 可操作地連接該多個區域 1、2,並且促進該多個區域 1、2 之間的運動。連接裝置 5 是旋鈕、車軸、鉸鏈、樞軸關節、杆、輪、軸、圓柱體或允許啟動某些區域而停用其他區域的類似旋轉裝置。在給定時間,連接裝置 5 沿第一方向轉動,該第一方向啟動某些區域,而其他區域排隊等待。例如,當連接裝置 5 沿第一方向轉動時,第一區域 1 被啟動(例如,被降低),使切削元件 3 與拋光墊 13 接合以切入墊中用於進行主動修整,同時停用(例如,提起)第二區域 2 以從拋光墊 13 上移開切削元件 4。相反地,當連接裝置 5 沿與第一方向相反的第二方向轉動時,第二區域 2 被啟動(例如,被降低),使切削元件 4 與拋光墊 13 接合以切入墊中用於進行主動修整,同時停用(例如,提起)第一區域 1 以從拋光墊 13 上移開切削元件 3。Referring again to FIGS. 2-3, the connecting
根據另外的實施例,墊修整盤 100 可選地包括具有不同類型的切削元件的多個區域,以增加功能。圖 4 示出了根據本發明實施例的具有多個區域的墊修整盤 100 的示意圖,該多個區域具有不同類型的切削元件 3'、4'。在所示的實施例中,墊修整盤 100 包括具有切削元件 3'的第一區域 1 和分開的具有切削元件 4'的第二區域 2。在此,第一區域 1 和第二區域 2 的切削元件 3'、4'不相同。切削元件 3'可以具有與切削元件 4'不同的尺寸和/或可以具有與切削元件 4'不同的取向和/或切削角度。舉例來說,安裝在第一區域 1 上的切削元件 3'是塊狀金剛石,而安裝在第二區域 2 上的切削元件 4'是鋒利金剛石。在圖 4 所示的第一位置中,鋒利金剛石與拋光墊 13 接合,而塊狀金剛石不與拋光墊 13 接合。因此,在特定的應用期間,保留或有意不使用塊狀金剛石。According to further embodiments, the
圖 5 示出了根據本發明實施例的具有多個區域的墊修整盤的示意圖,該多個區域具有與圖 4 相比處於不同位置的不同類型的切削元件。在圖 5 所示的第二位置中,第一區域 1 和第二區域 2 的位置已經改變,塊狀金剛石現在與拋光墊 13 接合,而鋒利金剛石現在不與拋光墊 13 接合。因此,由於 CMP 工藝的要求已經改變,在特定的應用期間,保留或有意不使用鋒利金剛石。FIG. 5 shows a schematic view of a pad dressing disc having multiple regions with different types of cutting elements in different positions compared to FIG. 4 according to an embodiment of the present invention. In the second position shown in FIG. 5, the positions of the
具有多個區域和多種不同類型的切削元件的墊修整盤 100 給予某種期望效果。在同一墊修整盤 100 上的不同類型的切削元件的這種混合使用提供了將不同類型的切削元件的優點結合在一起的可能,而這些原本是無法實現的。舉例來說,可以將鋒利金剛石安裝到一個區域以進行侵蝕性區域啟動,並且可以將塊狀金剛石安裝到另一區域以進行溫和區域啟動。在異位修整過程中,在晶片不在拋光墊上的時間段內,啟動侵蝕性區域以利用鋒利的金剛石齒形成更深的切口並有效地使拋光墊恢復;然後,由侵蝕性區域啟動產生的大的拋光墊碎片會從拋光墊表面沖出,而不會接觸晶片。在原位修整期間,當同時拋光晶片時,啟動溫和區域以利用塊狀金剛石齒來提供柔和的切削效果,這有助於維護平坦且一致的表面。溫和區域啟動還有助於獲得更好的凹陷度/腐蝕性能,同時避免由於大的拋光墊碎片而劃傷晶片的可能性。The
切削元件類型的各種組合可用於各個區域。例如,第一區域可以使用習知的金剛石砂粒,而第二區域可以使用化學氣相沉積(CVD)金剛石。單個墊修整盤中可以使用兩種以上不同類型的切削元件。在具有四個不同區域的墊修整盤中,可以使用四種不同類型的切削元件。可替換地,如果墊修整盤具有四個區域,則可以使用兩種不同類型的切削元件;兩個區域可以具有相同類型的切削元件,其餘兩個區域可以具有相同類型的切削元件。Various combinations of cutting element types can be used in various areas. For example, the first area may use conventional diamond grit, while the second area may use chemical vapor deposition (CVD) diamond. More than two different types of cutting elements can be used in a single pad dressing disc. In a pad dressing disc with four different areas, four different types of cutting elements can be used. Alternatively, if the pad dressing disc has four regions, two different types of cutting elements can be used; two regions can have the same type of cutting elements, and the remaining two regions can have the same type of cutting elements.
現在轉向利用根據本發明的實施例的墊修整盤的示例性實施例。圖 6 示出了根據本發明實施例的具有同心區域的墊修整盤 200 的第一位置的透視圖。圖 7 示出了根據本發明實施例的圖 6 的墊修整盤 200 的底視圖。圖 8 示出了根據本發明實施例的圖 6 的墊修整盤 200 的側視圖。圖 9 示出了根據本發明實施例的圖 7 中 A-A 向的剖視圖。如圖 6 - 9 所示,墊修整盤 200 包括外區域 201 和內區域 202。內區域 202 相對於外區域 201 至少略微凹陷;內區域 202 位於由外區域 201 的內徑邊緣表面圍繞的空白區域內。在這個第一位置,外區域 201 的切削元件接合拋光墊,而內區域 202 的切削元件不接合拋光墊。Turning now to an exemplary embodiment of using a pad dressing disc according to an embodiment of the present invention. FIG. 6 shows a perspective view of a first position of a
圖 10 示出了根據本發明實施例的圖 6 的墊修整盤 200 的第二位置的透視圖。圖 11 示出了根據本發明實施例的圖 10 的墊修整盤 200 的底視圖。圖 12 示出了根據本發明實施例的圖 10 的墊修整盤 200 的側視圖。圖 13 示出了根據本發明實施例的圖 11 中 A-A 向的剖視圖。如圖 10 - 13 所示,內區域 202 現在更靠近拋光墊,使得在這個第二位置,內區域 202 的切削元件接合拋光墊,而外區域 201 的切削元件不接合拋光墊。FIG. 10 shows a perspective view of the second position of the
連接裝置 205 有助於外區域 201 相對於內區域 202 的運動,反之亦然。連接裝置 205 是外區域 201 和內區域 202 之間的螺紋連接。在示例性實施例中,外區域 201 包括沿著外區域 201 的內表面周向地佈置的陰螺紋,內區域 202 包括與外區域 201 的陰螺紋配合的對應的陽螺紋。在另一個實施例中,外區域 201 可以包括陽螺紋,而內區域 202 可以包括陰螺紋。區域 201、202 中的一個或兩個在順時針或逆時針方向上的螺紋作用實現了區域 201、202 的相對運動。因此,如果啟動內區域 202(例如,在給定的時間需要內區域 202 的切削元件),則將內區域 202 朝拋光墊向前拉,或者將外區域 201 拉開,或者向前和向後運動的組合。圖 9 和圖 13 佳地示出了由於連接裝置 205 而導致的外區域 201 和內區域 202 之間的相對運動。在替換實施例中,連接裝置 205 由位於外區域 201 或內區域 202 中與螺紋相似的位置中的作為螺紋的單個螺旋槽和被裝配在該槽內並圍繞該槽周向地行進的唇/舌/突出部形成,以實現外區域 201 和內區域 202 之間的相對垂直運動。The connecting
繼續墊修整盤 200,圖 14 - 16 示出了啟動多個區域 201、202 中的一個區域以改變區域 201 相對於區域 202 的位置的示例性實施例。圖 14 示出了根據本發明實施例的在第一位置的被可操作地連接至墊修整器臂 16 的墊修整盤 200 的示意圖。外區域 201 的切削元件通過緊固件 207 被連接至底層 210。底層 210 通過可動連接件 19 被連接至墊修整器臂 16,如圖 15 所示。可動連接件 19 是被固定地連接到底層和/或外區域 201 並且被可動地連接到墊修整器臂 16 的軸。如圖 15 中所示,連接件 19a 的位置僅用於說明,並且可以被放置在不同的位置,例如在盤的中心,並且可以使用其他機械配置來完成該連接。在通過圖 14 所示的第一位置中,內區域 202 凹陷在外區域 201 環之間,使得內區域 202 的切削元件將不接合拋光墊,而外區域 201 的切削元件將接合拋光墊。圖 16 示出了根據本發明實施例的,在第二位置的被可操作地連接至墊修整器臂 16 的墊修整盤 200 的示意圖。在通過圖 16 所示的第二位置中,外區域 201 和內區域 202 之間的相對位置已經改變;內區域 202 自外區域 201 突出。在這個位置,內區域 202 的切削元件現在將與拋光墊接合,而外區域 201 的切削元件現在將不再與拋光墊接合。區域 201、202 相對於彼此的移動是通過其間的螺紋連接來實現的,如前文關於連接裝置 205 所描述的。馬達使可動連接件 19 旋轉,可動連接件 19 又使底層 110 旋轉,並且因此使緊固到底層 210 的外區域 201 旋轉。外區域 201 的旋轉使內區域202 根據螺紋連接的旋轉方向而上下移動。Continuing with the
圖 17 - 19 示出了啟動多個區域 201、202 中的一個區域以改變區域 201 相對於區域 202 的位置的另一個示例性實施例。圖 17 示出了根據本發明實施例的在第一位置的被可操作地連接至墊修整器臂 16 的墊修整盤 200 的示意圖。外區域 201 的切削元件通過緊固件 207 被連接到底層 210,而內區域 202 的切削元件通過緊固件 208 被連接到分開的底層 211。底層 210、211 分別通過單獨的連接件 19a 和 19b 被連接至墊修整器臂 16。可動連接件 19a、19b 是被固定地連接到各個底層並且被可動地連接到墊修整器臂 16 的軸,如圖 18 所示。如圖 18 中所示,連接件 19a、19b 的位置僅用於說明,並且可以被放置在不同的位置,並且可以使用其他機械配置來完成該連接。在通過圖 17 所示的第一位置中,內區域 202 凹陷在外區域 201 環之間,使得內區域 202 的切削元件將不接合拋光墊,而外區域 201 的切削元件將接合拋光墊。圖 19 示出了根據本發明實施例的,在第二位置的被可操作地連接至墊修整器臂 16 的墊修整盤 200 的示意圖。在通過圖 19 所示的第二位置中,外區域 201 和內區域 202 之間的相對位置已經改變;內區域 202 自外區域 201 突出。在這個位置,內區域 202 的切削元件現在將與拋光墊接合,而外區域 201 的切削元件現在將不再與拋光墊接合。區域 201、202 相對於彼此的移動是通過沿 Z 軸致動可動連接件 19a、19b 中的一個或兩個來實現的。致動器,例如馬達、氣動致動器、液壓致動器、機械致動器等,沿著 Z 軸致動可動連接件 19a、19b 中的一個或兩個,以改變區域 201、202 的位置。舉例來說,沿向上的方向致動可移動連接器 19a 以使外區域 201 升高一定距離,而沿向下方向致動可移動連接器 19b 以降低內區域 202。在其他示例中,僅致動可動連接件 19a 或僅致動可動連接件 19b 以將區域 201、202 致動到期望的位置或配置。FIGS. 17-19 show another exemplary embodiment of activating one of the plurality of
可以將根據本發明的實施例的墊修整盤的各個區域設計成各種幾何形狀和配置。例如,這些區域可以是同心環、徑向餅、螺旋筋和模(dies),其包括圓形墊修整盤。圖 20 - 23 僅示出了多個區域的幾個可能配置。圖 20 示出了根據本發明實施例的墊修整盤 300。墊修整盤 300 包括兩個分開的區域 301、302,其被同心地佈置為外區域 301 和內區域 302。圖 21 示出了根據本發明實施例的墊修整盤 400。墊修整盤 400 包括三個區域 401、402、403。區域 401 和 403 沿著墊修整盤 400 的外環佈置為徑向餅形截面。區域 402 被佈置為墊修整盤 400 的外環內的中心部分。圖 22 示出了根據本發明實施例的墊修整盤 500。墊修整盤 500 包括圍繞墊修整盤 500 周向佈置的總共十六個區域。該總共十六個區域由標記為 501、502、 503 和 504 的四種不同類型的切削元件組成。雖然顯示了總共十六個區域,但是在類似配置中可以使用任意數量的區域。圖 23 示出了根據本發明實施例的墊修整盤 600。墊修整盤 600 包括在墊修整盤 600 上以行和列佈置的總共三十二個區域。該三十二個區域由標記為 601、 602、603、604 和 605 的五種不同類型的切削元件組成。雖然顯示了總共三十二個區域,但是在類似配置中可以使用任意數量的區域。此外,可選地在區域之間設置 O 型環和/或其他絕緣裝置,以避免化學物質/漿料/副產物的積聚。The various regions of the pad conditioning disk according to embodiments of the invention can be designed into various geometries and configurations. For example, these regions may be concentric rings, radial pies, spiral ribs, and dies, which include round pad dressing discs. Figures 20-23 show only a few possible configurations for multiple areas. FIG. 20 shows a
繼續參考附圖,圖 24 示出了根據本發明實施例的利用墊修整盤的 CMP 工具 1000。CMP 工具 1000 包括具有機器底座 130 的拋光機、拋光液輸送臂 190、佈置在台板 102 上的拋光墊 104、拋光頭 106、修整器組件 122 和控制器 152。機器底座 130 支撐台板 102、拋光液輸送臂 190 和修整器組件 122。台板 102 支撐拋光頭 106。拋光頭 106 可以通過馬達 120 旋轉,從而使基材 118 圍繞拋光頭 106 的中心軸線 D 旋轉而抵靠拋光墊 104。可以利用感測器 148 來獲得使基材 118 抵靠拋光墊 104 旋轉所需的力的量。Continuing to refer to the drawings, FIG. 24 shows a
利用台板 102 來在處理過程中使拋光墊 104 旋轉,使得拋光墊 104 將被放置在墊 104 上的基材 118 的表面平坦化(“拋光”)。拋光墊 104 是具有拋光表面的消耗品,並且可以固定到台板 102 上。通過軸 114 耦接至台板 102 的馬達 112 使台板 102 和拋光墊 104 旋轉。利用馬達 112 使拋光墊 104 相對於被保持在拋光頭 106 中的基材 118 移動。在所示的實施例中,馬達 112 使台板 102 在 X-Z 平面中繞垂直於台板 102 的中心軸線 A 旋轉。可以利用感測器 150 來獲得使台板 102 和拋光墊 104 相對於基材 118 和/或修整器組件 122 旋轉所需的力的量。The
拋光液輸送臂 190 在拋光期間將拋光液提供給拋光墊 104 的表面。修整器組件 122 通常包括修整頭 108、軸 126 和臂 128。軸 126 和臂 128 將修整頭 108 支撐在台板 102 上方。修整頭 108 保留根據本發明的實施例的修整盤,該修整盤被選擇性地放置成與拋光墊104 接合以修整拋光墊 104 的表面。軸 126 穿過 CMP 工具 1000 的機器底座 130 設置。軸 126 可以繞垂直於機器底座 130 的軸線 B 旋轉,機器底座 130 和軸 126 之間的軸承 132 有助於該旋轉,使得臂 128 旋轉修整頭 108。在一個實施例中,被耦接至軸 126 的掃描致動器(sweep actuator)144 可以使軸 126 旋轉以推動臂 128 將修整頭 108 掃描越過拋光墊 104。修整頭 108 使修整盤繞通常被佈置為穿過修整盤的軸線 C 旋轉。在一個實施例中,利用馬達 134 使修整盤相對於拋光墊 104 旋轉。在一個實施例中,將馬達 134 佈置在臂 128 的遠端處的殼體 136 中。The polishing
利用向下力致動器 140 將修整盤推向拋光墊 104。將向下力致動器 140 配置為選擇性地設置由修整盤 124 施加在拋光墊 104 上的力。在一個實施例中,可以將向下力致動器 140 佈置在臂 128 與軸 126 之間,或在其他合適的位置。利用向下力感測器 142 來檢測指示被施加在拋光墊 104 上的修整盤的下壓力的量。在一個實施例中,可以將向下力感測器 142 佈置為與下壓力致動器 140 同軸,或者可以被放置在其他合適的位置。A
通常,控制器 152 用於控制在 CMP 工具 1000 中執行的一個或多個元件和過程。控制器 152 可以在不同點處耦接至 CMP 工具 1000,以便向各個元件發送信號和自各個元件接收信號。例如,控制器可以被連接到動態墊修整盤回饋系統。動態回饋系統收集拋光墊粗糙度的讀數,並且由中央處理單元 154 傳輸到伺服器,以計算是否需要對拋光墊進行額外的修整。控制器 152 可以基於從伺服器接收的計算進行調整。動態回饋系統還可以捕獲拋光墊表面的高解析度光學圖像,以通過伺服器分析墊的粗糙度。動態回饋系統還可以用於測量CMP 工具 1000 的扭矩和摩擦或其他元件。此外,回饋系統能夠用於調節下壓力和/或調節用於墊修整的侵蝕性區域與溫和區域使用的比例。Generally, the
控制器 152 通常被設計為有助於 CMP 工具 1000 的控制和自動化,並且典型地包括中央處理單元(CPU)154、記憶體 156 和支援電路(或 I/O)158。CPU 154 可以是在工業設置中使用的任何形式的電腦處理器之一,用於控制各種系統功能、基材移動、腔室處理、處理定時及支援硬體(例如,感測器、機器人、馬達、定時設備等)和監控工藝(例如,化學濃度、處理變數、腔室處理時間,I/O 信號等)。記憶體 156 被連接到 CPU 154,並且可以是一種或多種容易獲得的記憶體,例如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟,或本地或遠端的任何其他形式的數位記憶體。可以對軟體指令和資料進行編碼並存儲在記憶體中,以指示 CPU 154。支援電路 158 也被連接到 CPU 154,用於以習知方式支援處理器。支援電路 158 可以包括快取記憶體、電源供應器、時鐘電路、輸入 /輸出電路、子系統等。控制器 152 可讀的程式或電腦指令確定哪些任務可在基材上執行。優選地,該程式是控制器 152 可讀的軟體,其包括用於執行與監控、執行和控制拋光機 100 中的基材的運動、支撐和/或定位有關的任務的代碼。在一個實施例中,控制器 152 用於控制機器人設備以控制拋光器 100 的策略性移動、時序安排和運行,以使過程可重複,解決佇列定時問題並防止基材的過度處理或處理不足。The
此外,根據本發明實施例的墊修整盤用於修整 CMP 工具的拋光墊。例如,一種用於修整化學機械拋光工具的拋光墊的方法包括選擇性地啟動具有多個區域的墊修整盤的選定區域。該多個區域中的每個區域均具有用於修整拋光墊的切削元件。用於修整拋光墊的區域的選擇取決於多個因素。該多個因素包括拋光配方、拋光專案、化學機械拋光工具的使用時間、由化學機械拋光工具拋光的多個晶片的間隔、拋光墊的優表面孔隙度等。In addition, the pad dressing disc according to an embodiment of the present invention is used to dress the polishing pad of the CMP tool. For example, a method for dressing a polishing pad of a chemical mechanical polishing tool includes selectively activating selected areas of a pad conditioning disk having multiple areas. Each of the plurality of regions has cutting elements for dressing the polishing pad. The choice of the area used to trim the polishing pad depends on several factors. The multiple factors include the polishing recipe, the polishing project, the usage time of the chemical mechanical polishing tool, the interval of the multiple wafers polished by the chemical mechanical polishing tool, the excellent surface porosity of the polishing pad, and the like.
舉例來說,選擇初始區域用於修整拋光墊並相應地啟動,使得初始區域的切削元件將用於修整拋光墊。基於以下事實選擇初始區域:當前正在異位執行 CMP 工藝,在晶片未同時在拋光墊上拋光時,且初始區域的切削元件 適合進行異位修整。向墊修整盤施加向下力(例如,下壓力),使初始選定的區域的切削元件與拋光墊接合,但其他區域的切削元件不與拋光墊接合。如果將 CMP 工藝更改為原位修整,當同時在拋光墊上拋光晶片時,基於從異位修整到原位修整的變化,選擇性地啟動一個新的不同區域。異位元和原位的組合產生理想的墊表面紋理,大程度地減少墊修整副產品,並且避免墊過度磨損。For example, the initial area is selected for dressing the polishing pad and activated accordingly, so that the cutting elements of the initial area will be used for dressing the polishing pad. The initial region is selected based on the fact that the CMP process is currently being performed ex-situ, when the wafer is not simultaneously polished on the polishing pad, and the cutting elements in the initial region are suitable for ex-situ dressing. A downward force (eg, downforce) is applied to the pad conditioning disk to engage the cutting elements in the initially selected area with the polishing pad, but the cutting elements in other areas do not engage the polishing pad. If the CMP process is changed to in-situ trimming, when the wafer is polished on the polishing pad at the same time, a new different area is selectively activated based on the change from ex-situ trimming to in-situ trimming. The combination of ex-situ and in-situ produces an ideal pad surface texture, greatly reducing pad trim by-products, and avoiding excessive pad wear.
舉另一個示例來說,選擇初始區域用於修整拋光墊並相應地啟動,使得初始區域的切削元件將用於修整拋光墊。選擇初始區域來修整拋光墊,以適應 CMP 工具拋光的“x”個晶片的數量。向墊修整盤施加向下力(例如,下壓力),使初始選定的區域的切削元件與拋光墊接合,但其他區域的切削元件不與拋光墊接合,從而保留這些切削元件。在通過 CMP 工具拋光了“x”個晶片之後,選擇性地啟動一個新的不同區域,以修整拋光墊來用於另外的“x”個晶片。在這種情況下,兩個區域都具有相同類型的切削元件。以這種方式,切削元件以不同的速率磨損,並且不需要改變墊修整盤以利用新的切削元件來獲得 佳性能。As another example, the initial region is selected for dressing the polishing pad and activated accordingly, so that the cutting elements of the initial region will be used for dressing the polishing pad. The initial area is selected to trim the polishing pad to accommodate the number of "x" wafers polished by the CMP tool. A downward force (eg, downforce) is applied to the pad conditioning disk to engage the cutting elements of the initially selected area with the polishing pad, but the cutting elements of other areas do not engage the polishing pad, thereby retaining these cutting elements. After polishing "x" wafers by the CMP tool, a new different area is selectively activated to trim the polishing pad for additional "x" wafers. In this case, both areas have the same type of cutting element. In this way, the cutting elements wear at different rates, and there is no need to change the pad dressing disc to take advantage of the new cutting elements to obtain good performance.
在另外的示例中,在拋光墊是新的、使用過的或一段時間未積極使用的拋光墊磨合期間內,切削元件的一個區域被與拋光墊表面接合的某種類型的金剛石啟動,以產生需要的表面紋理/孔隙度,其他區域則脫離接合。在將拋光墊積極地用於晶片拋光的處理期間,用某種不同類型的金剛石啟動不同的區域,而金剛石的第一區域則脫離接合,以產生不同類型的墊表面紋理/孔隙率(例如,平滑且一致),並具有不同尺寸(例如,更細)的切削副產品。在拋光過程中,特別是在異位修整期間,當不同時在墊上拋光晶片時,通過某種類型的金剛石與墊表面接合來啟動金剛石的一個區域,以產生所需的表面紋理/孔隙度,具有一定尺寸的切削副產品,而其他區域則脫離接合。在拋光過程中,特別是在原位修整期間,當同時在墊上拋光晶片時,用某種不同類型的金剛石來啟動不同的區域,而金剛石的第一區域則脫離接合,以產生不同類型的墊表面紋理/孔隙率(例如,平滑且一致),並具有不同尺寸(例如,更細)的切削副產品。其組合可產生理想的性能,並避免過度磨損。In another example, during the run-in period of the polishing pad where the polishing pad is new, used, or not actively used for a period of time, an area of the cutting element is activated by some type of diamond that engages the surface of the polishing pad to produce The desired surface texture/porosity, other areas are disengaged. During the process of actively using the polishing pad for wafer polishing, different areas are activated with a different type of diamond, and the first area of the diamond is disengaged to produce different types of pad surface texture/porosity (eg, Smooth and consistent), and cutting by-products of different sizes (for example, thinner). During polishing, especially during ex-situ trimming, when the wafer is not polished on the pad at the same time, a certain area of diamond is engaged with the pad surface by some type of diamond to produce the desired surface texture/porosity, Cutting byproducts of a certain size, while other areas are disengaged. During the polishing process, especially during in-situ trimming, when polishing the wafer on the pad at the same time, a different type of diamond is used to activate different areas, and the first area of the diamond is disengaged to produce different types of pads Surface texture/porosity (for example, smooth and consistent), and cutting by-products with different sizes (for example, finer). The combination produces ideal performance and avoids excessive wear.
此外,該方法還可以在 CMP 過程中應用,其中在拋光過程的第一部分拋光期間,通過某種類型的金剛石與墊表面接合來啟動金剛石的第一區域,以產生所需的表面紋理/孔隙度,而其他區域則脫離接合。在第二部分拋光期間,用某種不同類型的金剛石來啟動金剛石的第二區域,而金剛石的第一區域脫離接合,以產生不同類型的墊表面紋理/孔隙度。In addition, the method can also be applied during the CMP process, where during the first part of the polishing process, the first area of diamond is activated by some type of diamond engaging the pad surface to produce the desired surface texture/porosity , While the other areas are disengaged. During the second part of the polishing, a different type of diamond is used to activate the second area of diamond, while the first area of diamond is disengaged to produce different types of pad surface texture/porosity.
此外,可以使用不同的應用共用同一台板。例如,如果正在使用第一應用,則通過某種類型的金剛石與墊表面接合來啟動金剛石的第一區域,以產生所需的表面紋理/孔隙度,而其他區域則脫離接合。如果正在使用第二應用,則通過某種類型的金剛石與墊表面接合來啟動金剛石的第二區域,以產生所需的表面紋理/孔隙度,而其他區域則脫離接合。如果正在使用第三應用,則通過某種類型的金剛石與墊表面接合來啟動金剛石的第三區域,以產生所需的表面紋理/孔隙度,而其他區域則脫離接合,依次類推。In addition, different applications can share the same board. For example, if the first application is being used, the first area of diamond is activated by some type of diamond engaging the pad surface to produce the desired surface texture/porosity, while the other areas are disengaged. If a second application is being used, the second area of diamond is activated by some type of diamond bonding with the pad surface to produce the desired surface texture/porosity, while the other areas are disengaged. If a third application is being used, the third area of diamond is activated by some type of diamond bonding with the pad surface to produce the desired surface texture/porosity, while the other areas are disengaged, and so on.
儘管已經結合上面概述的特定實施例描述了本公開,但是顯然,對於本領域技術人員而言,許多替代、修改和變化將是顯而易見的。因此,如上所述的本公開的優選實施例旨在說明而不是限制。如所附申請專利範圍所要求的,不脫離本發明的精神和範圍可以作出各種改變。申請專利範圍提供了本發明的覆蓋範圍,並且不應當限於本文所提供的具體示例。Although the present disclosure has been described in conjunction with the specific embodiments outlined above, it is clear that many alternatives, modifications, and variations will be apparent to those skilled in the art. Therefore, the preferred embodiments of the present disclosure as described above are intended to be illustrative, not limiting. As required by the scope of the attached patent application, various changes can be made without departing from the spirit and scope of the present invention. The scope of patent application provides the coverage of the present invention and should not be limited to the specific examples provided herein.
1:第一區域 2:第二區域 3,3’:切削元件 4,4’:切削元件 5:連接裝置 10:CMP系統 11:輸送臂 12:拋光液 13:拋光墊 14:台板 15:拋光頭 16:軸 17:墊修整器臂 19:可動連接件 19a:連接件 19b:連接件 100:墊修整盤 102:台板 104:拋光墊 106:拋光頭 108:修整頭 112:馬達 114:軸 118:基材 120:馬達 122:修整器組件 124:修整盤 126:軸 128:臂 130:機器底座 132:軸承 134:馬達 136:殼體 140:向下力致動器 142:向下力感測器 144:掃描致動器 148:感測器 150:感測器 152:控制器 154:中央處理單元 156:記憶體 158:支援電路 190:輸送臂 200:墊修整盤 201:外區域 202:內區域 205:連接裝置 207:緊固件 208:緊固件 210:底層 211:底層 300:墊修整盤 301:外區域 302:內區域 400:墊修整盤 401:區域 402:區域 403:區域 500:墊修整盤 501:切削元件 502:切削元件 503:切削元件 504:切削元件 600:墊修整盤 601:切削元件 602:切削元件 603:切削元件 604:切削元件 605:切削元件 1000:CMP工具 A:中心軸線 B:軸線 C:軸線 D:中心軸線1: the first area 2: the second area 3,3’: Cutting elements 4,4’: Cutting elements 5: Connect the device 10: CMP system 11: conveyor arm 12: polishing liquid 13: polishing pad 14: Platen 15: Polishing head 16: axis 17: pad trimmer arm 19: movable connector 19a: connector 19b: connector 100: pad trimming disc 102: platen 104: polishing pad 106: polishing head 108: Dressing head 112: Motor 114: axis 118: substrate 120: motor 122: Dresser assembly 124: Finishing disk 126: Shaft 128: arm 130: Machine base 132: Bearing 134: Motor 136: Shell 140: downward force actuator 142: downward force sensor 144: Scan actuator 148: Sensor 150: Sensor 152: Controller 154: Central Processing Unit 156: Memory 158: Support circuit 190: conveyor arm 200: pad trimming disc 201: Outer area 202: inner area 205: Connect the device 207: Fastener 208: Fastener 210: bottom layer 211: Ground floor 300: pad trimming disc 301: Outer area 302: Inner area 400: pad trimming disc 401: Area 402: Area 403: Area 500: pad trimming disc 501: Cutting element 502: Cutting element 503: Cutting element 504: Cutting element 600: pad trimming disc 601: Cutting element 602: Cutting element 603: Cutting element 604: Cutting element 605: Cutting element 1000: CMP tool A: Central axis B: axis C: axis D: Central axis
將參考以下附圖詳細描述一些實施例,其中相同的附圖標記表示相同的構件,其中: 圖 1A 示出了根據本發明實施例的 CMP 系統的俯視示意圖; 圖 1B 示出了根據本發明實施例的圖 1A 中的 CMP 系統的剖視圖; 圖 2 示出了根據本發明實施例的具有在第一位置選擇性地接合拋光墊的多個區域的墊修整盤的示意圖; 圖 3 示出了根據本發明實施例的具有在第二位置選擇性地接合拋光墊的多個區域的墊修整盤的示意圖; 圖 4 示出了根據本發明實施例的具有多個區域的墊修整盤的示意圖,該多個區域具有不同類型的切削元件; 圖 5 示出了根據本發明實施例的具有多個區域的墊修整盤的示意圖,該多個區域具有與圖 4 相比位置改變的不同類型的切削元件; 圖 6 示出了根據本發明實施例的具有同心區域的墊修整盤的第一位置的透視; 圖 7 示出了根據本發明實施例的圖 6 的墊修整盤的底視圖; 圖 8 示出了根據本發明實施例的圖 6 的墊修整盤的側視圖; 圖 9 示出了根據本發明實施例的圖 7 中 A-A 向的剖視圖; 圖 10 示出了根據本發明實施例的圖 6 的墊修整盤的第二位置的透視; 圖 11 示出了根據本發明實施例的圖 10 的墊修整盤的底視圖; 圖 12 示出了根據本發明實施例的圖 10 的墊修整盤的側視圖; 圖 13 示出了根據本發明實施例的圖 11 中 A-A 向的剖視圖; 圖 14 示出了根據本發明實施例的在第一位置的被可操作地連接至墊修整器臂的墊修整盤的示意圖; 圖 15 示出了根據本發明實施例的圖 14 的頂視圖; 圖 16 示出了根據本發明實施例的在第二位置的被可操作地連接至墊修整器臂的墊修整盤的示意圖; 圖 17 示出了根據本發明實施例的在第一位置的被可操作地連接至墊修整器臂的墊修整盤的示意圖; 圖 18 示出了根據本發明實施例的圖 17 的頂視圖; 圖 19 示出了根據本發明實施例的在第二位置的被可操作地連接至墊修整器臂的墊修整盤的示意圖; 圖 20 示出了根據本發明實施例的墊修整盤的第一種配置; 圖 21 示出了根據本發明實施例的墊修整盤的第二種配置; 圖 22 示出了根據本發明實施例的墊修整盤的第三種配置; 圖 23 示出了根據本發明實施例的墊修整盤的第四種配置; 圖 24 示出了根據本發明實施例的利用墊修整盤的 CMP 工具。Some embodiments will be described in detail with reference to the following drawings, in which the same reference numerals denote the same components, where: FIG. 1A shows a schematic top view of a CMP system according to an embodiment of the present invention; FIG. 1B shows a cross-sectional view of the CMP system in FIG. 1A according to an embodiment of the present invention; 2 shows a schematic diagram of a pad conditioning disk having multiple regions that selectively engage polishing pads in a first position according to an embodiment of the invention; FIG. 3 shows a schematic diagram of a pad conditioning disk having multiple regions that selectively engage polishing pads in a second position according to an embodiment of the present invention; 4 shows a schematic view of a pad dressing disc having multiple regions with different types of cutting elements according to an embodiment of the present invention; FIG. 5 shows a schematic view of a pad dressing disc having multiple regions with different types of cutting elements whose position changes compared to FIG. 4 according to an embodiment of the present invention; 6 shows a perspective view of a first position of a pad conditioning disk with concentric areas according to an embodiment of the invention; 7 shows a bottom view of the pad conditioning disk of FIG. 6 according to an embodiment of the present invention; 8 shows a side view of the pad conditioning disk of FIG. 6 according to an embodiment of the present invention; 9 shows a cross-sectional view taken along line A-A in FIG. 7 according to an embodiment of the present invention; 10 shows a perspective view of the second position of the pad conditioning disk of FIG. 6 according to an embodiment of the present invention; 11 shows a bottom view of the pad dressing tray of FIG. 10 according to an embodiment of the present invention; 12 shows a side view of the pad dressing disc of FIG. 10 according to an embodiment of the present invention; 13 shows a cross-sectional view taken along line A-A in FIG. 11 according to an embodiment of the present invention; 14 shows a schematic view of a pad dressing disc operably connected to a pad dresser arm in a first position according to an embodiment of the invention; 15 shows a top view of FIG. 14 according to an embodiment of the present invention; FIG. 16 shows a schematic view of a pad dressing disc operably connected to a pad dresser arm in a second position according to an embodiment of the present invention; FIG. 17 shows a schematic view of a pad dressing disc operably connected to a pad dresser arm in a first position according to an embodiment of the present invention; 18 shows a top view of FIG. 17 according to an embodiment of the present invention; FIG. 19 shows a schematic view of a pad dressing disc operably connected to a pad dresser arm in a second position according to an embodiment of the invention; FIG. 20 shows a first configuration of a pad conditioning disk according to an embodiment of the present invention; 21 shows a second configuration of the pad conditioning disk according to an embodiment of the present invention; 22 shows a third configuration of the pad conditioning disk according to an embodiment of the present invention; FIG. 23 shows a fourth configuration of the pad conditioning disk according to an embodiment of the present invention; FIG. 24 shows a CMP tool using a pad to trim a disc according to an embodiment of the present invention.
無no
1:第一區域 1: the first area
2:第二區域 2: the second area
3:切削元件 3: Cutting elements
4:切削元件 4: Cutting element
5:連接裝置 5: Connect the device
13:拋光墊 13: polishing pad
100:墊修整盤 100: pad trimming disc
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US62/737,078 | 2018-09-26 |
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TW108134870A TW202015861A (en) | 2018-09-26 | 2019-09-26 | Multiple zone pad conditioning disk |
Country Status (4)
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US (1) | US20200094375A1 (en) |
KR (1) | KR20200035367A (en) |
CN (1) | CN110948392A (en) |
TW (1) | TW202015861A (en) |
Families Citing this family (5)
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JP7308074B2 (en) * | 2019-05-14 | 2023-07-13 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
CN112077743A (en) * | 2020-09-24 | 2020-12-15 | 上海新昇半导体科技有限公司 | Polishing pad dresser, polishing apparatus and method |
CN112847145B (en) * | 2021-02-07 | 2022-09-16 | 华海清科股份有限公司 | Polishing solution supply arm and chemical mechanical polishing device |
CN115122229B (en) * | 2022-07-14 | 2023-03-14 | 深圳市力子光电科技有限公司 | Polishing device and polishing method for chip processing |
CN116749080B (en) * | 2023-08-18 | 2023-11-14 | 浙江求是半导体设备有限公司 | Dressing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6514127B2 (en) * | 2000-11-30 | 2003-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Conditioner set for chemical-mechanical polishing station |
US6769968B2 (en) * | 2002-03-29 | 2004-08-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interchangeable conditioning disk apparatus |
US6951509B1 (en) * | 2004-03-09 | 2005-10-04 | 3M Innovative Properties Company | Undulated pad conditioner and method of using same |
JP2006278977A (en) * | 2005-03-30 | 2006-10-12 | Fujitsu Ltd | Manufacturing method of semiconductor device and polishing method |
US7510463B2 (en) * | 2006-06-07 | 2009-03-31 | International Business Machines Corporation | Extended life conditioning disk |
TW200914202A (en) * | 2007-09-19 | 2009-04-01 | Powerchip Semiconductor Corp | Polishing pad conditioner and method for conditioning polishing pad |
CN101927457A (en) * | 2009-06-26 | 2010-12-29 | 宋健民 | Combined finisher |
US9149906B2 (en) * | 2011-09-07 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for CMP pad conditioning |
CN102990529A (en) * | 2011-09-09 | 2013-03-27 | 深圳嵩洋微电子技术有限公司 | Two-sided repairing disc of chemical-mechanical polishing pad |
US20170008146A1 (en) * | 2015-07-10 | 2017-01-12 | Abrasive Technology, Inc. | Chemical mechanical planarization conditioner |
WO2018063242A1 (en) * | 2016-09-29 | 2018-04-05 | Intel Corporation | Chemical-mechanical planarization (cmp) pad conditioner brush-and-abrasive hybrid for multi-step, preparation- and restoration-conditioning process of cmp pad |
US10857651B2 (en) * | 2017-11-20 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus of chemical mechanical polishing and operating method thereof |
-
2019
- 2019-09-25 US US16/582,452 patent/US20200094375A1/en not_active Abandoned
- 2019-09-26 CN CN201910917992.7A patent/CN110948392A/en active Pending
- 2019-09-26 TW TW108134870A patent/TW202015861A/en unknown
- 2019-09-26 KR KR1020190119170A patent/KR20200035367A/en unknown
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CN110948392A (en) | 2020-04-03 |
KR20200035367A (en) | 2020-04-03 |
US20200094375A1 (en) | 2020-03-26 |
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