TW202014064A - Low dielectric substrate material - Google Patents
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- TW202014064A TW202014064A TW108134073A TW108134073A TW202014064A TW 202014064 A TW202014064 A TW 202014064A TW 108134073 A TW108134073 A TW 108134073A TW 108134073 A TW108134073 A TW 108134073A TW 202014064 A TW202014064 A TW 202014064A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/18—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/025—Electric or magnetic properties
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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Abstract
Description
本發明係關於一種低介電基板材,詳細而言,係關於一種可較佳地用於製造高頻天線或高速傳輸基板之低介電基板材。The present invention relates to a low-dielectric-based sheet, in particular, to a low-dielectric-based sheet that can be preferably used for manufacturing high-frequency antennas or high-speed transmission substrates.
先前,所謂「第三代(3G)」標準及「第四代(4G)」標準之無線通信已被廣泛應用。然而,近年來,存在圖像資料等之通信容量進一步增加之傾向(大容量化之傾向),於上述標準之無線通信中,無法以實用水準之速度傳輸大容量之資料。Previously, the so-called "third generation (3G)" standard and "fourth generation (4G)" standard wireless communication have been widely used. However, in recent years, there has been a tendency for the communication capacity of image data and the like to further increase (the tendency to increase the capacity). In the above-mentioned standard wireless communication, it is impossible to transmit large-capacity data at a practical level.
因此,在不斷推進所謂「第五代(5G)」標準之無線通信之開發。若為「第五代(5G)」標準之無線通信,則可傳輸大容量之資料。而且,於該「第五代(5G)」標準之無線通信中,亦可高速傳輸上述資料,近年來,對利用「第五代(5G)」標準之期待與日俱增。Therefore, the development of so-called "fifth generation (5G)" standard wireless communication is constantly being promoted. If it is "fifth generation (5G)" standard wireless communication, it can transmit large-capacity data. Furthermore, in the "fifth generation (5G)" standard wireless communication, the above-mentioned data can also be transmitted at high speed. In recent years, the expectation of using the "fifth generation (5G)" standard has increased day by day.
具體而言,於「第五代(5G)」標準之無線通信中,使用包含毫米波之高頻。該毫米波容易因大氣中之水分而衰減,作為釋放毫米波之高頻天線之基板材,要求介電常數較低之基板材。若將低介電基板材用於天線,則可高效率地釋放毫米波之電波。又,若使用低介電天線用基板材,則通信距離延長,而且可謀求天線構件之小面積化,進而亦會降低消耗電力。Specifically, in the "Fifth Generation (5G)" standard wireless communication, high frequencies including millimeter waves are used. This millimeter wave is easily attenuated by moisture in the atmosphere. As a base plate for high-frequency antennas that release millimeter waves, a base plate with a low dielectric constant is required. If a low-dielectric substrate is used for the antenna, the millimeter wave electric wave can be efficiently released. In addition, if a base material for a low-dielectric antenna is used, the communication distance is extended, and the area of the antenna member can be reduced, which in turn reduces power consumption.
又,近年來,作為FPC(Flexible Print Circuit,可撓性印刷電路基板),要求高速傳輸資料之高速傳輸FPC,作為該高速傳輸FPC之基板材,亦要求低介電基板材。In addition, in recent years, as FPC (Flexible Print Circuit), high-speed transmission FPC that requires high-speed data transmission is required. As the base material of the high-speed transmission FPC, a low-dielectric base material is also required.
為了應對上述要求,即,作為大容量之資料無線通信之天線或高速傳輸FPC所具備之基板材,在不斷推進介電常數較低之低介電基板之開發,且已開發出使用聚醯亞胺系樹脂或氟系樹脂等低介電樹脂材料之基板。In response to the above requirements, that is, as an antenna for large-capacity data wireless communication or as a base material for high-speed transmission FPC, the development of low-dielectric substrates with low dielectric constants has been continuously promoted, and the use of polyacrylic acid has been developed. Substrates of low-dielectric resin materials such as amine resins and fluorine resins.
另一方面,亦研究了材料為多孔質體之基板。由於多孔質體在孔內包含具有最低介電常數1之空氣,故而多孔質體之介電常數相對較低。作為具備此種多孔質體之金屬箔積層板,例如提出有具備作為絕緣材之樹脂多孔質層、及配置於其厚度方向兩側之金屬箔之金屬箔積層板(例如,參照下述專利文獻1)。 [先前技術文獻] [專利文獻]On the other hand, substrates made of porous materials have also been studied. Since the porous body contains air having the lowest dielectric constant of 1, the dielectric constant of the porous body is relatively low. As a metal foil laminate with such a porous body, for example, there is proposed a metal foil laminate with a resin porous layer as an insulating material and metal foils arranged on both sides in the thickness direction (for example, refer to the following patent documents 1). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本專利特開2004-82372號公報[Patent Document 1] Japanese Patent Laid-Open No. 2004-82372
[發明所欲解決之問題][Problems to be solved by the invention]
然而,包括上述專利文獻1在內之先前之多孔質體雖可用於「第三代(3G)」標準或「第四代(4G)」標準之無線通信中,或用作以先前之速度傳輸資料之FPC之基板材,但由於其孔隙率較低,故而介電常數並非充分之低,其並不具有「第五代(5G)」標準或高速傳輸FPC所需之水準之低介電常數。However, the previous porous body including the above-mentioned
又,於上述專利文獻1之金屬箔積層板中,為了抑制金屬箔自多孔質層脫落,而於其等之間配置了膜厚充分之接著層,將樹脂多孔質體與金屬箔接著。然而,於「第五代(5G)」標準或高速傳輸FPC所需之水準之低介電常數中,接著層之介電常數會造成較大影響,從而發生無法達成上述水準之不良情況。In addition, in the metal foil laminate of the above-mentioned
本發明提供一種具有更低之介電常數且金屬層之接著強度良好之低介電基板材。 [解決問題之技術手段]The invention provides a low-dielectric-based sheet material with a lower dielectric constant and good adhesion strength of a metal layer. [Technical means to solve the problem]
因此,本發明人等進行了銳意研究,結果發明了一種低介電基板材,其自如運用孔隙率顯著較高之多孔質樹脂層,具有適合第五代(5G)標準或高速傳輸FPC之低介電常數,而且金屬層之接著強度良好。Therefore, the inventors have made intensive studies, and as a result have invented a low-dielectric-based sheet that can easily use a porous resin layer with a significantly higher porosity, which has a low level suitable for the fifth generation (5G) standard or high-speed transmission FPC The dielectric constant and the adhesion strength of the metal layer are good.
本發明[1]包含一種低介電基板材,其於厚度方向依次具備多孔質樹脂層、接著層及金屬層,且上述接著層之厚度d1與上述多孔質樹脂層之厚度d2滿足下述式(1): d1/d2≦0.5 (1)。The present invention [1] includes a low-dielectric-based plate material, which is sequentially provided with a porous resin layer, an adhesive layer and a metal layer in the thickness direction, and the thickness d1 of the adhesive layer and the thickness d2 of the porous resin layer satisfy the following formula (1): d1/d2≦0.5 (1).
本發明[2]包含如[1]之低介電基板材,其滿足下述式(2): 2≦d2/d1≦150 (2)。 [發明之效果]The present invention [2] includes the low-dielectric-based sheet as in [1], which satisfies the following formula (2): 2≦d2/d1≦150 (2). [Effect of invention]
該低介電基板材於具有多孔質樹脂層,且多孔質樹脂層具有較高之孔隙率之情形時,可具有充分低之低介電常數。具體而言,低介電基板材可具有足以應對第五代(5G)標準之無線通信之天線或高速傳輸FPC之較低之介電常數。When the low-dielectric-based plate material has a porous resin layer and the porous resin layer has a high porosity, it can have a sufficiently low low dielectric constant. Specifically, the low-dielectric-based sheet may have a relatively low dielectric constant sufficient for antennas of the fifth generation (5G) standard wireless communication or high-speed transmission FPC.
該低介電基板材由於在厚度方向依次具備多孔質樹脂層、接著層及金屬層,故而金屬層與多孔質樹脂層之接著強度良好。Since the low-dielectric-based plate material includes the porous resin layer, the adhesive layer and the metal layer in this order in the thickness direction, the adhesive strength between the metal layer and the porous resin layer is good.
又,於該低介電基板材中,接著層之厚度d1薄於多孔質樹脂層之厚度d2,故而介電常數較高之接著層之量少於介電常數較低之多孔質樹脂層之量。因此,可抑制接著層對介電常數之影響,從而使低介電基板材之介電常數變低。In addition, in the low-dielectric-based sheet, the thickness d1 of the adhesive layer is thinner than the thickness d2 of the porous resin layer, so the amount of adhesive layer with higher dielectric constant is less than that of the porous resin layer with lower dielectric constant the amount. Therefore, the influence of the adhesive layer on the dielectric constant can be suppressed, so that the dielectric constant of the low-dielectric base plate becomes lower.
因此,可抑制金屬層脫落,且可具有足以應對第五代(5G)標準之無線通信之天線或高速傳輸FPC之較低之介電常數。Therefore, it is possible to suppress the metal layer from falling off, and it can have a low dielectric constant sufficient for an antenna of the fifth generation (5G) standard wireless communication or a high-speed transmission FPC.
<一實施形態> 參照圖1及圖2對本發明之低介電基板材之一實施形態進行說明。<First embodiment> One embodiment of the low dielectric substrate sheet of the present invention will be described with reference to FIGS. 1 and 2.
[基本態樣]
首先,對該低介電基板材1之作為基本態樣之層構成、製造方法及使用方法等依次進行說明。[Basic appearance]
First, the layer configuration, manufacturing method, and usage method of the low-
〔低介電基板材及其層構成〕
如圖1所示,低介電基板材1具有於厚度方向對向之一面及另一面,且具有於與厚度方向正交之面方向延伸之形狀。〔Low dielectric substrate sheet and its layer structure〕
As shown in FIG. 1, the low-
該低介電基板材1具備第1金屬層3、配置於第1金屬層3之厚度方向一面之多孔質樹脂層4、配置於多孔質樹脂層4之厚度方向一面之接著層5、及配置於接著層5之厚度方向一面之第2金屬層(金屬層之一例)6。即,低介電基板材1自厚度方向另一側朝向一側依次具備第1金屬層3、多孔質樹脂層4、接著層5及第2金屬層6。較佳為低介電基板材1僅具備第1金屬層3、多孔質樹脂層4、接著層5及第2金屬層6。The low-dielectric-based
〔第1金屬層〕
第1金屬層3具有於厚度方向對向之一面及另一面,且具有於面方向延伸之片形(板形)形狀。第1金屬層3之材料並不特別限定,例如可列舉銅、鐵、銀、金、鋁、鎳、其等之合金(不鏽鋼、青銅)等。較佳列舉銅。第1金屬層3之厚度例如為0.1 μm以上,較佳為1 μm以上,又,例如為100 μm以下,較佳為50 μm以下。[1st metal layer]
The
〔多孔質樹脂層〕
多孔質樹脂層4具有於厚度方向對向之一面及另一面,且具有於面方向延伸之片形形狀。多孔質樹脂層4之另一面與第1金屬層3之一面接觸(密接)。〔Porous resin layer〕
The
多孔質樹脂層4具有多個微細之空孔(氣孔)10。多孔質樹脂層4例如具有獨立氣泡構造及連續氣泡構造之任一者。較佳為主要具有獨立氣泡構造,該情形時之獨立氣泡之比率例如超過50%,較佳為80%以上,更佳為90%以上,又,例如未達100%。若獨立氣泡之比率高於上述下限,則可抑制起因於第1金屬層3及第2金屬層6之圖案化中所使用之蝕刻液向多孔質樹脂層4之滲入而導致之圖案精度之降低。亦即,可抑制由於蝕刻液滲入多孔質樹脂層4中而連同由第1金屬層3及第2金屬層6之抗蝕劑保護之部分亦藉由蝕刻液而被去除。The
進而,為了製作天線電路基板,而利用鑽孔器或雷射等對本發明之低介電基板材施以開孔加工然後進行鍍覆處理時,鍍覆液浸滲得到抑制,故而可於孔之表面形成厚度均勻之金屬層。此處,所謂鍍覆液浸滲,係指鍍覆液自因上述開孔加工而露出之多孔部滲入,從而於多孔質樹脂層4內析出金屬之現象;其將成為形成於孔表面之金屬層之厚度變得不均勻,或變得不連續,從而出現多孔質樹脂層之露出部分之原因。Furthermore, in order to fabricate the antenna circuit board, when the low-dielectric base material of the present invention is subjected to hole processing and then plated using a drill or laser, the infiltration of the plating liquid is suppressed, so it can be used in the hole A metal layer with a uniform thickness is formed on the surface. Here, the soaking of the plating solution means that the plating solution penetrates from the porous portion exposed by the above-mentioned hole-forming process, thereby depositing metal in the
多孔質樹脂層4中之孔隙率為60%以上,更佳為70%以上,進而更佳為80%以上,特佳為85%以上。再者,多孔質樹脂層4中之孔隙率未達100%,較佳為未達99%。孔隙率例如係藉由多孔質樹脂層4之剖面SEM(scanning electron microscope,掃描式電子顯微鏡)照片之圖像解析而求出。或者,孔隙率係藉由基於下述式之計算而求出:
孔隙率(%)=(1-無孔樹脂層之比重/多孔質樹脂層之比重)×100。The porosity in the
再者,式中,無孔樹脂層係包含多孔質樹脂層4之材料,但並非具有多孔質而是具有緻密質之膜。Furthermore, in the formula, the non-porous resin layer includes the material of the
若多孔質樹脂層4中之孔隙率為上述下限以上,則多孔質樹脂層4具有足以充分應對第五代(5G)標準或高速傳輸FPC之較低之介電常數。具體而言,低介電基板材1如上所述,作為足以充分應對第五代(5G)標準或高速傳輸FPC之基板材較為有用。If the porosity in the
多孔質樹脂層4中之空孔10之平均直徑(即,平均孔徑)例如為10 μm以下,又,例如為0.1 μm以上。平均孔徑係藉由多孔質樹脂層4之剖面SEM照片之圖像解析而求出。圖像解析係對SEM像實施2值化,識別出空孔10後,算出其孔徑,並將其柱狀圖化。解析軟體使用ImageJ。The average diameter (ie, average pore diameter) of the pores 10 in the
多孔質樹脂層4之頻率10 GHz下之介電常數係根據孔隙率及以下敍述之樹脂之種類而適當調整,具體而言,例如為2.5以下,較佳為2.0以下,又,例如超過1.0。介電常數係藉由使用10 GHz頻率之共振器法而實測。The dielectric constant of the
若多孔質樹脂層4之介電常數為上述上限以下,則由於低介電基板材1具有低介電常數,故而可作為第五代(5G)標準或高速傳輸FPC之基板材而有用地使用。If the dielectric constant of the
作為多孔質樹脂層4之材料,並不特別限定,例如可列舉熱硬化性樹脂、熱塑性樹脂等樹脂。The material of the
作為熱硬化性樹脂,例如可列舉聚碳酸酯樹脂、熱硬化性聚醯亞胺樹脂、熱硬化性氟化聚醯亞胺樹脂、環氧樹脂、酚樹脂、尿素樹脂、三聚氰胺樹脂、鄰苯二甲酸二烯丙酯樹脂、矽酮樹脂、熱硬化性胺基甲酸酯樹脂、氟樹脂(含氟烯烴之聚合物(具體而言,為聚四氟乙烯(PTFE)等))、液晶聚合物(LCP)等。其等可單獨使用或將2種以上併用。Examples of thermosetting resins include polycarbonate resins, thermosetting polyimide resins, thermosetting fluorinated polyimide resins, epoxy resins, phenol resins, urea resins, melamine resins, and o-phthalic acid. Diallyl formate resin, silicone resin, thermosetting urethane resin, fluororesin (fluoroolefin-containing polymer (specifically, polytetrafluoroethylene (PTFE), etc.)), liquid crystal polymer (LCP) etc. These can be used alone or in combination of two or more.
作為熱塑性樹脂,例如可列舉烯烴樹脂、丙烯酸系樹脂、聚苯乙烯樹脂、聚酯樹脂、聚丙烯腈樹脂、馬來醯亞胺樹脂、聚乙酸乙烯酯樹脂、乙烯-乙酸乙烯酯共聚物、聚乙烯醇樹脂、聚醯胺樹脂、聚氯乙烯樹脂、聚縮醛樹脂、聚苯醚樹脂、聚苯硫醚樹脂、聚碸樹脂、聚醚碸樹脂、聚醚醚酮樹脂、聚芳碸樹脂、熱塑性聚醯亞胺樹脂、熱塑性氟化聚醯亞胺樹脂、熱塑性胺基甲酸酯樹脂、聚醚醯亞胺樹脂、聚甲基戊烯樹脂、纖維素樹脂、液晶聚合物、離子聚合物等。其等可單獨使用或將2種以上併用。Examples of the thermoplastic resin include olefin resin, acrylic resin, polystyrene resin, polyester resin, polyacrylonitrile resin, maleimide resin, polyvinyl acetate resin, ethylene-vinyl acetate copolymer, and poly Vinyl alcohol resin, polyamide resin, polyvinyl chloride resin, polyacetal resin, polyphenylene ether resin, polyphenylene sulfide resin, polyphenol resin, polyether resin, polyether ether ketone resin, polyaromatic resin, Thermoplastic polyimide resin, thermoplastic fluorinated polyimide resin, thermoplastic urethane resin, polyether amide imide resin, polymethylpentene resin, cellulose resin, liquid crystal polymer, ionic polymer, etc. . These can be used alone or in combination of two or more.
上述樹脂中,自機械強度之觀點而言,較佳列舉聚醯亞胺樹脂(包含熱硬化性聚醯亞胺樹脂及熱塑性聚醯亞胺樹脂)、氟化聚醯亞胺樹脂(熱硬化性氟化聚醯亞胺樹脂及熱塑性氟化聚醯亞胺樹脂)、聚碳酸酯樹脂、聚醚醯亞胺樹脂。特佳列舉聚醯亞胺樹脂。Among the above resins, from the viewpoint of mechanical strength, polyimide resins (including thermosetting polyimide resins and thermoplastic polyimide resins) and fluorinated polyimide resins (thermosetting) are preferably exemplified. Fluorinated polyimide resin and thermoplastic fluorinated polyimide resin), polycarbonate resin, polyether amide imide resin. Particularly good examples are polyimide resins.
聚醯亞胺樹脂係包含具有獨立氣泡構造之多孔質樹脂層4之低介電基板材1之製作步驟中所包含的最適合以加壓方式積層之材料。再者,上述較佳之樹脂之物性及製造方法等之詳細情況例如於日本專利特開2018-021171號公報、日本專利特開2018-021172號公報等中有所記載。Polyimide resin is a material most suitable for lamination by pressurization, which is included in the production step of the low-
多孔質樹脂層4可具有形成於其厚度方向一面及另一面之表層(未圖示)。The
多孔樹脂層4之厚度方向一面或另一面之算術平均粗糙度(Ra)例如為0.1 μm以上,較佳為0.2 μm以上,又,例如為1.0 μm以下,較佳為0.7 μm以下。又,多孔質樹脂層4之厚度方向一面或另一面之最大高度(Rz)例如為1.0 μm以上,較佳為2.0 μm以上,又,例如為15.0 μm以下,較佳為10.0 μm以下。The arithmetic mean roughness (Ra) of one side or the other side in the thickness direction of the
多孔質樹脂層4之厚度例如為2 μm以上,較佳為5 μm以上,更佳為25 μm以上,進而更佳為50 μm以上,又,例如為1,000 μm以下,較佳為500 μm以下。The thickness of the
再者,多孔質樹脂層4以外之層,具體而言為第1金屬層3、接著層5(下述)及第2金屬層6(下述),均與多孔質樹脂層4不同,例如無孔,即,實質上不具有微細之空孔,緻密。In addition, layers other than the
[接著層]
接著層5於多孔質樹脂層4之厚度方向一面,具有沿著面方向之片形形狀。[Next layer]
Next, the
作為接著層5之材料,並不特別限定,可列舉熱熔型接著劑、熱硬化型接著劑等各種類型之接著劑,具體而言,可列舉丙烯酸系接著劑、環氧系接著劑、矽酮系接著劑等。較佳列舉丙烯酸系接著劑。The material of the
接著層5之厚度例如為2 μm以上,較佳為5 μm以上,又,例如為50 μm以下,較佳為25 μm以下。The thickness of the
[第2金屬層]
第2金屬層6具有於厚度方向對向之一面及另一面,且具有於面方向延伸之片形形狀。第2金屬層6之另一面經由接著層5接著於多孔質樹脂層4之一面。第2金屬層6之材料及厚度與第1金屬層3之材料及厚度相同。[2nd metal layer]
The second metal layer 6 has one surface and the other surface facing in the thickness direction, and has a sheet shape extending in the surface direction. The other surface of the second metal layer 6 is adhered to one surface of the
低介電基板材1之厚度係第1金屬層3、多孔質樹脂層4、接著層5及第2金屬層6之總厚度,例如為10 μm以上,較佳為20 μm以上,又,例如為5,000 μm以下,較佳為2,000 μm以下。The thickness of the low
〔低介電基板材之製造方法〕
其次,對低介電基板材1之製造方法進行說明。[Manufacturing method of low dielectric substrate]
Next, a method of manufacturing the low-
再者,於一實施形態之低介電基板材1之製造中,例如藉由輥對輥法一面搬送各構件一面積層(形成)各構件。In addition, in the manufacture of the low-
具體而言,首先,準備第1金屬層3。例如,準備包含上述材料之箔(金屬箔)作為第1金屬層3。Specifically, first, the
繼而,於第1金屬層3之一面形成多孔質樹脂層4。例如,於第1金屬層3之一面製作(製作嵌入)多孔質樹脂層4。Then, a
具體而言,首先,製備包含上述樹脂之前驅物、多孔化劑、核劑及溶劑之清漆,繼而,將清漆塗佈於第1金屬層3之一面而形成塗膜。清漆中之多孔化劑、核劑及溶劑之種類以及調配比率等例如於日本專利特開2018-021171號公報、日本專利特開2018-021172號公報等中有所記載。Specifically, first, a varnish containing the above-mentioned resin precursor, porous agent, nucleating agent, and solvent is prepared, and then the varnish is applied to one surface of the
尤其是,多孔化劑之質量份數(調配比率)相對於100質量份前驅物,例如為1質量份以上,較佳為3質量份以上,更佳為20質量份以上,進而更佳為50質量份以上,又,例如為300質量份以下,較佳為250質量份以下。In particular, the mass fraction (provision ratio) of the porous agent is, for example, 1 part by mass or more, preferably 3 parts by mass or more, more preferably 20 parts by mass or more, and even more preferably 50 parts by mass with respect to 100 parts by mass of the precursor. The mass part or more is, for example, 300 mass parts or less, preferably 250 mass parts or less.
核劑係於使前驅物發泡(多孔化)時成為核之發泡核劑(氣泡調整劑)。又,作為核劑,除了上述公報中所記載之核劑(PTFE等)以外,亦可列舉聚(三氟氯乙烯)等氟樹脂(含氟烯烴之聚合物),進而亦可列舉含有(甲基)丙烯酸酯及上述含氟烯烴作為單體單位之共聚物等。The nucleus agent is a foaming nucleus agent (bubble regulator) that becomes a nucleus when the precursor is foamed (porous). In addition, as the nucleating agent, in addition to the nucleating agent (PTFE, etc.) described in the above-mentioned gazette, fluororesins (polymers of fluorinated olefins) such as poly(trifluorochloroethylene) and the like (a Group) Acrylic esters and copolymers containing the above-mentioned fluorine-containing olefins as monomer units.
核劑於常溫(23℃)下,例如可為固體狀、液體狀、半固體狀之任一者,較佳為固體狀。若核劑於常溫下為固體狀,則作為核劑之形狀,例如可列舉大致球形形狀、大致板形形狀、大致針形形狀、不定形狀(包含塊狀),較佳列舉大致球形形狀。The nucleating agent can be any one of solid, liquid, and semi-solid at room temperature (23°C), and is preferably solid. If the nucleus agent is solid at normal temperature, examples of the shape of the nucleus agent include a substantially spherical shape, a substantially plate shape, a substantially needle shape, and an indefinite shape (including a block shape), and preferably a substantially spherical shape.
若核劑於常溫下為固體狀,則核劑之最大長度之平均值(若為大致球形形狀,則為平均粒徑)例如為2,000 nm以下,較佳為1,000 nm以下,更佳為800 nm以下,進而更佳為未達500 nm,又,例如為1 nm以上。If the nucleating agent is solid at normal temperature, the average value of the maximum length of the nucleating agent (average particle diameter if it is roughly spherical) is, for example, 2,000 nm or less, preferably 1,000 nm or less, more preferably 800 nm In the following, it is more preferably less than 500 nm, and, for example, 1 nm or more.
又,核劑亦能以預先分散於溶劑(PTFE)中之漿料之形式製備。In addition, the core agent can also be prepared in the form of a slurry previously dispersed in a solvent (PTFE).
然後,利用加熱將塗膜乾燥,藉此一面推進溶劑之去除,一面形成以核劑為核之前驅物與多孔化劑之相分離構造。Then, the coating film is dried by heating, thereby promoting the removal of the solvent, and on the other hand, forming a phase separation structure in which the nucleus agent is the nucleus precursor and the porous agent.
然後,例如藉由將超臨界二氧化碳用作溶劑之超臨界提取法,將多孔化劑自前驅物提取(抽掉或去除)。Then, for example, by a supercritical extraction method using supercritical carbon dioxide as a solvent, the porous agent is extracted (extracted or removed) from the precursor.
然後,使前驅物硬化,形成具有多孔之樹脂具體而言為多孔質樹脂層4。Then, the precursor is hardened to form a
然後,將接著層5配置於多孔質樹脂層4之一面。例如,將接著劑塗佈於多孔質樹脂層4之一面,或將由接著劑預先形成為片狀所得之接著層5貼附於多孔質樹脂層4之一面。Then, the
繼而,將第2金屬層6配置於接著層5之一面。例如,將包含上述材料之箔(金屬箔)貼附於接著層5之一面。Then, the second metal layer 6 is arranged on one surface of the
藉此,製造低介電基板材1。With this, the low-dielectric-based
該低介電基板材1例如可用於各種用途,較佳為用於製造適合第五代(5G)標準之高頻天線或高速傳輸基板(高速傳輸FPC等)。具體而言,低介電基板材1可用作高頻天線或高速傳輸FPC之基板材。The low-dielectric-based
於將低介電基板材1用於上述用途之情形時,藉由光微影(例如,減成法),如圖2所示將第2金屬層6圖案化,例如形成信號配線(差動配線等)或天線配線等一側配線17。繼而,藉由光微影將第1金屬層3圖案化,例如形成接地配線等另一側配線18。When the low-dielectric-based
藉此,製造朝向厚度方向一側依次具備另一側配線18、多孔質樹脂層4、接著層5及一側配線17之圖案積層材13,將該圖案積層材13設置於適合第五代(5G)標準之高頻天線或高速傳輸基板。With this, a
而且,該低介電基板材1具有多孔質樹脂層4,多孔質樹脂層4具有60%以上,更佳為70%以上,進而更佳為80%以上,特佳為85%以上之較高之孔隙率之情形時,可具有充分低之低介電常數。具體而言,低介電常數例如為2.5以下,較佳為2.0以下。因此,低介電基板材1可具有足以應對第五代(5G)標準之無線通信之天線基板或高速傳輸FPC之較低之介電常數。Moreover, the low
又,低介電基板材1具備第1金屬層3及第2金屬層6,故而可作為支持第五代(5G)標準之天線或高速傳輸FPC之基板之配線而圖案化。具體而言,即便於工業上之蝕刻條件下,將第1金屬層3及第2金屬層6圖案化,亦能以優異之精度形成適合第五代(5G)之天線或高速傳輸FPC之基板之配線。In addition, the low-
又,於多孔質樹脂層4具有獨立氣泡構造之情形時,且獨立氣泡之比率較高,超過50%,進而為80%以上,再進而為90%以上之情形時,可抑制起因於圖案化中所使用之蝕刻液之滲入而導致之圖案精度之降低。因此,低介電基板材1作為足以充分且確實地應對第五代(5G)標準之無線通信或高速傳輸FPC之基板材較為有用。In addition, when the
<顯著之特徵點>
繼而,以下對該低介電基板材1之顯著之特徵點進行說明。<Significant feature points>
Next, the significant features of the low-
該低介電基板材1中,於厚度方向依次具備多孔質樹脂層4、接著層4及第2層6。因此,多孔質樹脂層4與第2金屬層6之接著強度良好。The low-dielectric-based
具體而言,多孔質樹脂層4與第2金屬層6之接著力例如為0.3 N/mm以上,較佳為0.6 N/mm以上,又,例如為3.0 N/mm以下。Specifically, the adhesive force between the
多孔質樹脂層4與第2金屬層6之接著力係於23℃下將第2金屬層6相對於多孔質樹脂層4以90度之角度剝離時之90°剝離強度,其詳細情況將於實施例中詳細敍述。The adhesive force between the
因此,可抑制第2金屬層6自低介電基板材1脫落。尤其是,於將第2金屬層6形成於配線17時,可抑制配線17之全部或部分自多孔質樹脂層4剝離,從而可抑制配線17斷線。Therefore, it is possible to suppress the second metal layer 6 from falling off from the low-
又,接著層5之厚度d1與多孔質樹脂層4之厚度d2滿足下述式(1):
d1/d2≦0.5 (1)。In addition, the thickness d1 of the
接著層5之厚度d1相對於多孔質樹脂層4之厚度d2之比(d1/d2)為0.5以下。換言之,接著層5之厚度d1為多孔質樹脂層4之厚度d2之一半或薄於多孔質樹脂層4之厚度d2之一半。The ratio (d1/d2) of the thickness d1 of the
亦即,介電常數較多孔質樹脂層4高之接著層5之厚度充分薄於多孔質樹脂層4之厚度,故而可降低接著層5對介電常數之影響。因此,可使低介電基板材1之介電常數變低。因此,可較佳地用作適合第五代(5G)標準之高頻天線或高速傳輸板。That is, the thickness of the
再者,於具備樹脂基板及金屬層之低介電基板材中,由於不具有接著層,故而接著力較差。另一方面,若為了提高接著力而於樹脂基板與金屬層之間配置接著層,則低介電基材材之介電常數會受到接著層之介電常數之影響。而且,於先前之樹脂基板中,並未要求可用作適合第五代(5G)標準之高頻天線或高速傳輸板之程度之低介電化,故而關於接著層之接著性以外之性能並未予以關注。然而,基於適合第五代(5G)標準之必要性,開始要求基板材進一步低介電化,發明人發現藉由不僅使樹脂基板低介電化而且使接著層低介電化能滿足該要求。In addition, in a low-dielectric-based plate material provided with a resin substrate and a metal layer, since there is no adhesive layer, the adhesive force is poor. On the other hand, if an adhesive layer is disposed between the resin substrate and the metal layer in order to improve the adhesive force, the dielectric constant of the low-dielectric base material will be affected by the dielectric constant of the adhesive layer. Moreover, in the previous resin substrates, there is no requirement for a low dielectric that can be used as a high-frequency antenna or a high-speed transmission board suitable for the fifth generation (5G) standard, so there is no performance other than the adhesion of the adhesive layer. Pay attention. However, based on the necessity of being suitable for the 5th generation (5G) standard, the base material has been required to be further low-dielectric, and the inventors found that this requirement can be satisfied by not only making the resin substrate low-dielectric but also the adhesive layer low-dielectric.
具體而言,發明人發現,藉由使接著層之厚度變薄,使較接著層低之多孔質樹脂層之介電常數具有支配性,可降低基板材整體之介電常數。然而,若接著層過薄,則樹脂基板與金屬層之間之接著力會變得不充分,故而必須以可同時實現充分之接著力與介電常數之抑制之厚度來設計接著層。因此,本發明藉由使接著層5薄至多孔質樹脂層4之一半以下,而一面確保接著力,一面抑制介電常數提高,其結果,實現了第2金屬層6之非剝離(接著層4之接著力)與低介電基板材1之低介電之平衡。Specifically, the inventors found that by making the thickness of the adhesive layer thinner, the dielectric constant of the porous resin layer lower than that of the adhesive layer is dominant, and the dielectric constant of the entire base plate can be reduced. However, if the adhesive layer is too thin, the adhesive force between the resin substrate and the metal layer becomes insufficient. Therefore, the adhesive layer must be designed with a thickness that can achieve sufficient suppression of the adhesive force and the dielectric constant. Therefore, in the present invention, by making the
於上述式(1)中,上述比(d1/d2)為0.3以下,更佳為0.1以下。又,上述比(d1/d2)例如為0.01以上,較佳為0.03以上。In the above formula (1), the above ratio (d1/d2) is 0.3 or less, more preferably 0.1 or less. In addition, the ratio (d1/d2) is, for example, 0.01 or more, preferably 0.03 or more.
又,於該低介電基板材1中,較佳為滿足下述式(2):
2≦d2/d1≦150 (2)。In addition, in the low-dielectric-based
具體而言,多孔質樹脂層4之厚度d2相對於接著層5之厚度d1之比(d2/d1)較佳為2以上,更佳為3以上,進而更佳為10以上,又,較佳為150以下,更佳為25以下,進而更佳為20以下。Specifically, the ratio (d2/d1) of the thickness d2 of the
若上述比為上述下限以上,則多孔質樹脂層4與第2金屬層6之接著力更加優異。另一方面,若上述比為上述上限以下,則低介電基板材1之介電常數變得更低,作為適合第五代(5G)標準或高速傳輸FPC之基板材極為有用。If the above ratio is equal to or greater than the above lower limit, the adhesive force between the
又,於該低介電基板材1中,較佳為滿足下述式(3):
5 μm≦d2-d1≦115 μm (3)。In addition, in the low-dielectric-based
具體而言,多孔質樹脂層4之厚度d2與接著層5之厚度d1之差(d2-d1)較佳為5 μm以上,更佳為20 μm以上,進而更佳為50 μm以上,又,較佳為115 μm以下,更佳為100 μm以下。Specifically, the difference (d2-d1) between the thickness d2 of the
若上述差為上述下限以上,則低介電基板材1之介電常數進一步變低。另一方面,若上述比為上述上限以下,則多孔質樹脂層4與第2金屬層6之接著力更加優異。If the difference is more than the lower limit, the dielectric constant of the low-
又,於該低介電基板材1中,接著層5之厚度d1例如為1 μm以上,較佳為4 μm以上,更佳為5 μm以上,又,例如為50 μm以下,較佳為44 μm以下,更佳為10 μm以下。Moreover, in the low-dielectric-based
若接著層5之厚度d1為上述下限以上,則多孔質樹脂層4與第2金屬層6之接著力更加優異。另一方面,若上述比為上述上限以下,則低介電基板材1之介電常數進一步變低。When the thickness d1 of the
接著層5之頻率10 GHz下之介電常數係根據接著劑之種類而適當調整,具體而言,例如為3.10以下,較佳為2.80以下,更佳為2.50以下,例如為1.00以上。若接著層5之介電常數為上述上限以下,則低介電基板材1之介電常數進一步變低。The dielectric constant of the frequency of the
低介電基板材1之頻率10 GHz下之介電常數例如為2.00以下,較佳為1.80以下,更佳為1.60以下,又,例如為1.00以上。The dielectric constant of the low-
<變化例> 其次,對一實施形態之變化例進行說明。於以下之各變化例中,關於與上述一實施形態相同之構件及步驟,標註相同之參照符號,並省略其詳細之說明。又,可將一實施形態及各變化例適當組合。進而,各變化例除非有特殊記載,否則便可發揮與一實施形態相同之作用效果。<Change example> Next, a variation of an embodiment will be described. In the following modified examples, the same components and steps as those in the above-mentioned embodiment are denoted by the same reference symbols, and detailed descriptions thereof are omitted. Moreover, one embodiment and each modification can be combined as appropriate. Furthermore, unless specifically described, each modified example can exert the same effects as those of the first embodiment.
於上述說明中,採用輥對輥法製造低介電基板材1,但並不限定於此,例如亦可採用批次法(單片式)製造低介電基板材1。In the above description, the roll-to-roll method is used to manufacture the low-
又,於一實施形態中,低介電基板材1具備第1金屬層3,但例如低介電基板材1亦可不具備第1金屬層3,儘管對此種情況未作圖示。亦即,於一實施形態中,為兩面金屬層積層型之低介電基板材,但例如於其他實施形態中,亦可為單面金屬層積層型之低介電基板材。Furthermore, in one embodiment, the low-dielectric-based
又,雖未圖示,但低介電基板材1可具備配置於第1金屬層3之另一側之第1剝離片、及配置於第2金屬層6之一側之第2剝離片。Although not shown, the low-
亦即,低介電基板材1亦可自厚度方向另一側朝向一側依次具備第1剝離片、第1金屬層3、多孔質樹脂層4、接著層5、第2金屬層6及第2剝離片。That is, the low-dielectric-based
再者,雖未圖示,但低介電基板材1亦可進而具備介置於各層間或形成於表面之功能層。
[實施例]In addition, although not shown, the low-dielectric-based
以下,表示實施例及比較例,對本發明更加具體地進行說明。再者,本發明並不受實施例及比較例之任何限定。又,以下之記載中所使用之調配比率(含有比率)、物性值、參數等具體數值可由上述「實施方式」中所記載之與其等對應之調配比率(含有比率)、物性值、參數等相應記載之上限(定義為「以下」、「未達」之數值)或下限(定義為「以上」、「超過」之數值)來代替。Hereinafter, Examples and Comparative Examples are shown, and the present invention will be described more specifically. Furthermore, the present invention is not limited by the examples and comparative examples. In addition, the specific values of the blending ratio (content ratio), physical property values, parameters, etc. used in the following description may correspond to the blending ratio (content ratio), physical property values, parameters, etc. corresponding to their equivalents described in the above “embodiments”. The upper limit (defined as "below" and "not reached" values) or the lower limit (defined as "above" and "exceeded" values) instead.
實施例1
首先,準備包含銅且厚度為12.5 μm之第1金屬層3。Example 1
First, the
繼而,向日本專利特開2018-021172號公報之參考例中所記載之100質量份聚醯亞胺前驅物溶液,調配4.2質量份醯亞胺化觸媒(2-甲咪唑)、200質量份包含聚氧乙烯二甲醚(日油公司製造,等級:MM400,重量平均分子量400)之多孔化劑、3質量份包含PTFE且平均粒徑為1000 nm之核劑、及NMP(N-甲基吡咯啶酮),而製備清漆。核劑係將以預先分散於NMP中之漿料之形式製備所得者相對於聚醯亞胺前驅物調配而成。再者,清漆中之NMP之總調配份數以加上上述漿料中所包含者,相對於聚醯亞胺前驅物100質量份,成為150質量份之方式進行了調整。Then, to 100 parts by mass of the polyimide precursor solution described in the reference example of Japanese Patent Laid-Open No. 2018-021172, 4.2 parts by mass of the imidate catalyst (2-imidazole) and 200 parts by mass were prepared A porosifying agent containing polyoxyethylene dimethyl ether (manufactured by NOF Corporation, grade: MM400, weight average molecular weight 400), 3 parts by mass of a nucleating agent containing PTFE and having an average particle diameter of 1000 nm, and NMP (N-methyl Pyrrolidone) while preparing a varnish. The nucleus agent is prepared by preparing the slurry pre-dispersed in NMP with respect to the polyimide precursor. In addition, the total blended parts of NMP in the varnish was adjusted so as to be 150 parts by mass with respect to 100 parts by mass of the polyimide precursor by adding those contained in the slurry.
將該清漆塗佈於第1金屬層3之一面,並於120℃下乾燥30分鐘,將NMP去除,繼而,藉由超臨界提取法,將多孔化劑去除,然後,在真空中,於380℃下加熱2小時,使之醯亞胺化,從而於第1金屬層3之一面製作嵌入包含聚醯亞胺之多孔質樹脂層4。The varnish was applied to one side of the
多孔質樹脂層4之厚度為120 μm。多孔質樹脂層4中之孔隙率為80%,平均孔徑為7 μm。又,多孔質樹脂層4之頻率10 GHz下之介電常數為1.5。The thickness of the
繼而,於多孔質樹脂層4之一面形成包含丙烯酸系接著劑且厚度為5 μm之接著層5。Then, an
繼而,將包含銅且厚度為12 μm之第2金屬層6接著於接著層5之一面。Then, the second metal layer 6 containing copper and having a thickness of 12 μm is attached to one side of the
藉此,如圖1所示,製造於厚度方向一側依次具備第1金屬層3、多孔質樹脂層4、接著層5、第2金屬層6之低介電基板材1。As a result, as shown in FIG. 1, a low-
實施例2~5
除了將接著層5之厚度d1及多孔質樹脂層之厚度d2變更為表1中所記載之厚度d1、d2以外,其他與實施例1相同地,製造低介電基板材1。Examples 2 to 5
Except that the thickness d1 of the
比較例1~3
除了將接著層5之厚度d1及多孔質樹脂層之厚度d2變更為表1中所記載之厚度d1、d2以外,其他與實施例1相同地,製造低介電基板材1。Comparative examples 1 to 3
Except that the thickness d1 of the
評價 <厚度> 使用針盤量規(PEACOCK公司製造,「UPRIGHT DIAL GAUGE R1-205」)來測定各層之厚度。Evaluation <Thickness> The thickness of each layer was measured using a dial gauge (manufactured by PEACOCK, "UPRIGHT DIAL GAUGE R1-205").
<接著力><adhesive force>
於各實施例及各比較例中,使用拉伸壓縮試驗機(今田製作所公司製造,「SUZ-50NT-2R2T」),藉由以剝離速度50 mm/分鐘之條件實施90度剝離試驗,而測定多孔質樹脂層4與第2金屬層6之接著力。再者,此時,接著層5與多孔質樹脂層4、第2金屬層6、或該等兩者僅幾點或整面地接著。In each of the Examples and Comparative Examples, a tensile compression tester (manufactured by Imada Manufacturing Co., Ltd., "SUZ-50NT-2R2T") was used to measure by performing a 90-degree peel test at a peel speed of 50 mm/min. The adhesive force between the
將接著力為0.6 N/mm以上之情形評價為〇。The case where the adhesive force was 0.6 N/mm or more was evaluated as 0.
將接著力為0.3 N/mm以上且未達0.6 N/mm之情形評價為△。The case where the adhesive force was 0.3 N/mm or more and less than 0.6 N/mm was evaluated as △.
將接著力未達0.3 N/mm之情形評價為×。The case where the adhesive force was less than 0.3 N/mm was evaluated as ×.
<介電常數> 於各實施例及各比較例之低介電基板材中,使用PNA網路分析儀(安捷倫科技公司製造,品名為「5227A」)及SPDR共振器來測定10 GHz下之比介電常數。<Dielectric constant> In the low-dielectric-based plates of the examples and comparative examples, a PNA network analyzer (manufactured by Agilent Technologies, product name "5227A") and SPDR resonator were used to measure the specific dielectric constant at 10 GHz.
將上述評價之結果表示於表1。Table 1 shows the results of the above evaluation.
<算術平均粗糙度(Ra)、最大高度(Rz)><Arithmetic average roughness (Ra), maximum height (Rz)>
準備3個將實施例1中所製作之多孔質樹脂層4按50 mm×50 mm之大小切取所得之試驗片,使用掃描式共聚聚焦雷射顯微鏡(Olympus公司製造,「OLS3000」)來測定其等之接著層側之面之算術平均粗糙度(Ra)及最大高度(Rz)。Three test pieces obtained by cutting the
Ra分別為0.444 μm、0.399 μm、0.396 μm,Ra之平均值為0.41 μm。又,Rz分別為4.761 μm、8.62 μm、6.502 μm,Rz之平均值為6.63 μm。Ra was 0.444 μm, 0.399 μm, 0.396 μm, and the average value of Ra was 0.41 μm. In addition, Rz is 4.767 μm, 8.62 μm, and 6.502 μm, respectively, and the average value of Rz is 6.63 μm.
[表1]
再者,上述發明係作為本發明之例示之實施形態而提供,但其只不過為單純之例示,並不應限定性地加以解釋。該技術領域之業者所明確之本發明之變化例包含於下述申請專利範圍內。 [產業上之可利用性]In addition, the above invention is provided as an exemplary embodiment of the present invention, but it is merely a mere illustration and should not be interpreted in a limited manner. Variations of the invention that are clear to those skilled in the art are included in the following patent applications. [Industry availability]
低介電基板材可較佳地用於製造高頻天線或高速傳輸基板。The low-dielectric-based sheet can be preferably used for manufacturing high-frequency antennas or high-speed transmission substrates.
1:低介電基板材 3:第1金屬層 4:多孔質樹脂層 5:接著層 6:第2金屬層 13:圖案積層材 17:一側配線 18:另一側配線 d1:接著層之厚度 d2:多孔質樹脂層之厚度1: Low dielectric substrate sheet 3: the first metal layer 4: porous resin layer 5: then layer 6: 2nd metal layer 13: Pattern laminate 17: Wiring on one side 18: Wiring on the other side d1: thickness of the next layer d2: Thickness of porous resin layer
圖1表示本發明之低介電基板材之一實施形態之剖視圖。 圖2表示自圖1所示之低介電基板材所獲得之圖案積層材之剖視圖。FIG. 1 shows a cross-sectional view of an embodiment of a low-dielectric-based sheet material of the present invention. FIG. 2 shows a cross-sectional view of the pattern laminate obtained from the low dielectric substrate sheet shown in FIG. 1. FIG.
1:低介電基板材 1: Low dielectric substrate sheet
3:第1金屬層 3: the first metal layer
4:多孔質樹脂層 4: porous resin layer
5:接著層 5: then layer
6:第2金屬層 6: 2nd metal layer
d1:接著層之厚度 d1: thickness of the next layer
d2:多孔質樹脂層之厚度 d2: Thickness of porous resin layer
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WO2022260085A1 (en) * | 2021-06-09 | 2022-12-15 | 株式会社村田製作所 | Porous resin sheet, porous resin sheet with metal layer, electronic circuit board, method for producing porous resin sheet, method for producing porous resin sheet with metal layer, and method for producing electronic circuit board |
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