TW202013585A - Substrate placing table and substrate treatment apparatus - Google Patents

Abstract

The present invention provides a substrate loading table and a substrate processing apparatus for performing a process such as etching with respect to a substrate for FPD with high in-plane uniformity. The substrate loading table for loading a substrate and controlling a temperature of the substrate when the substrate is processed in a processing container comprises: a first plate formed by separation plates of a plurality of metal materials spaced through a gap; and a second metal plate coming in contact with each of the separation plates, and having lower thermal conductivity than the first plate. Each of the separation plates contains a temperature control unit configured to perform unique temperature control.

Description

Substrate mounting table and substrate processing device

The present disclosure relates to a substrate mounting table and a substrate processing device.

Patent Document 1 discloses an electrostatic jig having a metal base material and a suction substrate. At least a portion of the base material in contact with the electrostatic jig is a substrate mounting table made of Mata loose iron-based stainless steel or ferrite iron-based stainless steel. According to the substrate mounting table disclosed in Patent Document 1 and the substrate processing apparatus provided with the substrate mounting table, it is possible to prevent damage to the electrostatic jig due to a difference in thermal expansion between the base material and the electrostatic jig. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2017-147278

[Problems to be solved by the invention]

The present disclosure provides a substrate mounting table that facilitates processing with high in-plane uniformity when etching a substrate for FPD, etc. in the manufacturing process of a flat panel display (hereinafter referred to as "FPD") And substrate processing equipment. [Means to solve the problem]

With the substrate mounting table caused by one aspect of the present disclosure, When the substrate is processed in the processing container, the substrate is placed for temperature adjustment. The substrate mounting table has: The first flat plate is formed by a plurality of metal separation plates separated by a gap; and The second flat plate made of metal, which is in contact with each of the above-mentioned separation plates, has a lower thermal conductivity than the first flat plate, Each of the above-mentioned separation plates has a built-in temperature-adjusting section that performs unique temperature adjustment. [Effect of invention]

According to the present disclosure, it is possible to provide a substrate mounting table and a substrate processing apparatus that perform processing with high in-plane uniformity when etching a substrate for FPD or the like.

Hereinafter, the substrate mounting table and the substrate processing apparatus related to the implementation type of the present disclosure will be described with reference to the attached drawings. In addition, in this specification and the drawings, substantially the same constituent elements may be given the same symbols, and overlapping descriptions may be omitted.

[Implementation type] (Substrate processing device and substrate mounting table) First, an example of a substrate processing apparatus related to the embodiment of the present disclosure and a substrate mounting table constituting the substrate processing apparatus will be described with reference to FIGS. 1 to 3. FIG. 1 is a cross-sectional view showing an example of a substrate mounting table and a substrate processing apparatus related to an embodiment. Furthermore, FIG. 2 is a view in the direction of arrows II-II of FIG. 1 and is a cross-sectional view of the first plate, and FIG. 3 is a view in the direction of arrows III-III of FIG. 1 and is a view of the first plate viewed from below. .

The substrate processing apparatus 100 shown in FIG. 1 is an Inductive Coupled Plasma (ICP) processing apparatus that performs various substrate processing on a substrate G (hereinafter referred to simply as “substrate”) G for FPD. As the material of the substrate G, glass is mainly used, and transparent synthetic resin may be used depending on the application. Here, the substrate processing includes etching processing or film forming processing using the CVD (Chemical Vapor Deposition) method. Examples of FPDs include liquid crystal displays (Liquid Crystal Display: LCD), electroluminescence (Electro Luminescence: EL) displays, and plasma display panels (Plasma Display Panel: PDP). Furthermore, the plane size of the substrate for FPD has become large-scale with the change of generations, and the plane size of the substrate G processed by the substrate processing apparatus 100 includes at least the size from about 1500 mm×1800 mm of the sixth generation to the tenth The size of the next generation is about 2800mm×3000mm. Furthermore, the thickness of the substrate G is about 0.5 mm to several mm.

The substrate processing apparatus 100 shown in FIG. 1 includes a box-shaped processing container 10 having a rectangular parallelepiped shape, a substrate mounting table 60 that is disposed in the processing container 10 and has a substrate G outside a rectangular shape in plan view, and a control unit 90.

The processing container 10 is divided into two upper and lower spaces by the dielectric plate 11, the upper space becomes the antenna chamber 12, and the lower space becomes the chamber 13 forming the processing chamber. In the processing container 10, a rectangular ring-shaped support frame 14 is disposed at a position that becomes the boundary between the chamber 13 and the antenna chamber 12, and the dielectric body is placed on the support frame 14 Board 11. The processing container 10 is grounded by the ground wire 13c.

The processing container 10 is formed of metal such as aluminum, and the dielectric plate 11 is formed of ceramic or quartz such as aluminum oxide (Al ₂ O ₃ ).

The side wall 13a of the chamber 13 has an opening provided with a carrying-in/out port 13b for carrying the substrate G in and out of the chamber 13, and the carrying-in/out port 13b is freely opened and closed by the gate valve 20. The chamber 13 is adjacent to a transfer chamber (both not shown) including a transfer mechanism, and the gate valve 20 is opened and closed, and the substrate G is transferred in and out by the transfer mechanism through the transfer-in/out port 13b.

Furthermore, a plurality of exhaust ports 13d are provided at the bottom of the chamber 13, and a gas exhaust pipe 51 is connected to the exhaust port 13d. The gas exhaust pipe 51 is connected to the exhaust device 53 via an on-off valve 52. The gas exhaust pipe 51, the on-off valve 52, and the exhaust device 53 form the gas exhaust portion 50. The exhaust device 53 has a vacuum pump such as a turbo molecular pump, etc., and is used to freely evacuate the chamber 13 to a certain degree of vacuum during the manufacturing process. In addition, a pressure gauge (not shown) is provided at an appropriate position in the chamber 13, and the monitoring information due to the pressure gauge is sent to the control unit 90.

Below the dielectric plate 11, a supporting beam for supporting the dielectric plate 11 is provided, and the supporting beam doubles as the shower head 30. The shower head 30 is formed of metal such as aluminum, and is preferably subjected to surface treatment caused by anodization. In the shower head 30, a gas flow path 31 extending in the horizontal direction is formed, and in the gas flow path 31, a gas discharge hole 32 extending downward and facing the processing space S located below the shower head 30 is formed.

A gas supply pipe 41 communicating with the gas flow path 31 is connected to the upper surface of the dielectric plate 11. The gas supply pipe 41 penetrates the top plate of the processing container 10 airtightly and is connected to the processing gas supply source 44. In the middle of the gas supply pipe 41, there is an on-off valve 42 and a flow controller 43 like mass flow control. The processing gas supply part 40 is formed by the gas supply pipe 41, the on-off valve 42, the flow controller 43, and the processing gas supply source 44. In addition, the gas supply pipes 41 are branched on the way, and each branch pipe is connected to an on-off valve and a flow controller, and a processing gas supply source (not shown) corresponding to the type of processing gas. In the plasma processing, the processing gas supplied from the processing gas supply unit 40 is supplied to the shower head 30 through the gas supply pipe 41, and is discharged into the processing space S through the gas discharge hole 32.

A high-frequency antenna 15 is arranged in the antenna container 12. The high-frequency antenna 15 is formed by winding an antenna 15a made of a highly conductive metal such as copper or aluminum into a loop or spiral shape. For example, the loop antenna 15a may be arranged in multiple turns.

At the terminal of the antenna 15a, a power supply member 16 extending upward from the antenna chamber 12 is connected, and a power supply line 17 is connected to the upper end of the power supply member 16. The power supply line 17 is connected to a high-frequency power source through a matching device 18 that performs impedance matching 19. By applying high-frequency power such as 13.56 MHz from the high-frequency power source 19 to the high-frequency antenna 15, an induced electric field is formed in the chamber 13. With this induced electric field, the processing gas supplied from the shower head 30 to the processing space S is plasma-generated to generate an inductively coupled plasma, and ions in the plasma are supplied to the substrate G. The high-frequency power source 19 is a source for plasma generation. As described in detail below, the high-frequency power source 73 (an example of a power source) connected to the substrate mounting table 60 becomes a bias voltage source that attracts generated ions and imparts kinetic energy. In this way, the ion source uses inductive coupling to generate plasma, and a bias source as another power source is connected to the substrate stage 60 to control the ion energy, whereby the plasma generation and ion energy control can be independently performed. Improve the freedom of the process. The frequency of the high-frequency power output from the high-frequency power source 19 is preferably set in the range of 0.1 to 500 MHz.

Next, the substrate mounting table 60 will be described. As shown in FIG. 1, the substrate mounting table 60 includes a metal first flat plate 61 formed by a plurality of separation plates 61 a and 61 b, and a second metal flat plate 63 connected to each of the separation plates 61 a and 61 b. The separation plates 61a, 61b forming the first flat plate 61 are separated through the gap 66, and a second flat plate 63 is connected to the upper surfaces of the separation plates 61a, 61b so as to electrically connect the separation plates 61a, 61b.

The second flat plate 63 has a rectangular shape in plan view, and has the same planar size as the FPD placed on the substrate mounting table 60. For example, the first flat plate 61 shown in FIG. 2 has the same plane size as the substrate G to be placed, the length t2 of the long side is about 1800 mm to 3000 mm, and the length t3 of the short side can be set to a size of about 1500 mm to 2800 mm . For this plane size, the total thickness of the first flat plate 61 and the second flat plate 63 can be, for example, about 50 mm to 100 mm.

The second flat plate 63 electrically connected to the separation plates 61a, 61b has a metal flat plate having a lower thermal conductivity than the first flat plate 61 (the separation plates 61a, 61b forming this). For example, the first flat plate 61 (the separation plates 61a and 61b forming this) is formed of aluminum or aluminum alloy. In addition, the second flat plate 63 is formed of stainless steel.

The aluminum-based metal material having a high thermal conductivity as the forming material of the first flat plate 61 includes A5052, A6061, and A1100 in terms of JIS standards. The thermal conductivity of A5052 is 138W/m･K, the thermal conductivity of A6061 is 180W/m･K, and the thermal conductivity of A1100 is 220W/m･K.

In addition, the stainless steel that is the material of the second flat plate 63 has a low thermal conductivity. The stainless steel includes Ma Tian loose iron series stainless steel or fat grain iron series stainless steel, and Vostian iron series stainless steel.

The Mata loose-iron stainless steel system is mainly composed of a metal structure and is composed of the Mata loose-iron phase. For JIS standards, SUS403, SUS410, SUS420J1, and SUS420J2 are suitable. In addition, as the other stainless steel of the Ma Tian loose iron system, SUS410S, SUS440A, SUS410F2, SUS416, SUS420F2, SUS431, etc. are mentioned. Regarding the thermal conductivity of Mata bulk iron stainless steel, the thermal conductivity of SUS403 is 25.1W/m･K, the thermal conductivity of SUS410 is 24.9W/m･K, the thermal conductivity of SUS420J1 is 30W/m･K, and the thermal conductivity of SUS440C 24.3W/m･K.

In addition, the ferrite iron-based stainless steel system is mainly composed of a metal structure and is composed of a ferrite iron phase. In terms of JIS standards, SUS430 is suitable. In addition, as other ferrite stainless steel, SUS405, SUS430LX, SUS430F, SUS443J1, SUS434, SUS444, etc. are mentioned. Regarding the thermal conductivity of ferrite stainless steel, the thermal conductivity of SUS430 is 26.4W/m･K.

In addition, the Vostian iron-based stainless steel system is mainly composed of a metal structure and is composed of a Vostian iron phase. For JIS standards, SUS303, SUS304, and SUS316 are suitable. Regarding the thermal conductivity of Vostian iron-based stainless steel, the thermal conductivity of SUS303 and SUS316 is 15W/m･K, and the thermal conductivity of SUS304 is 16.3W/m･K.

In this way, the thermal conductivity of stainless steel has a low thermal conductivity of about 1/5 to 1/10 relative to the thermal conductivity of aluminum.

The laminate of the first flat plate 61 and the second flat plate 63 is placed on a rectangular member 68 made of an insulating material, and the rectangular member 68 is fixed to the bottom plate of the chamber 13.

On the upper surface of the second flat plate 63 on which the substrate G is placed, an electrostatic jig 67 having a placement surface on which the substrate G is directly placed is formed. The electrostatic jig 67 is a dielectric film formed by spraying ceramics such as alumina, and includes an electrode 67a having an electrostatic adsorption function. The electrode 67a is connected to a DC power supply 75 via a power supply line 74. When the switch (not shown) intervening between the power supply lines 74 is turned on by the control unit 90, a DC voltage is applied from the DC power supply 75 to the electrode 67a to generate a Coulomb force, and the substrate G The force is electrostatically attracted to the upper surface of the electrostatic jig 67 and held in a state of being placed on the upper surface of the second plate 63.

The substrate mounting table 60 is composed of a first flat plate 61 and a second flat plate 63, and an electrostatic jig 67. Even on the upper surface of the electrostatic jig 67 (the mounting surface of the substrate G) or the second flat plate 63, a temperature sensor such as a thermocouple (not shown) is provided so that the temperature sensor can monitor the upper surface of the electrostatic jig 67 at any time or The temperature of the second flat plate 63 and the substrate G may be sufficient. On the substrate mounting table 60, the upper surface of the substrate mounting table 60 (the upper surface of the electrostatic jig 67) is freely extended and retracted, and a plurality of lift pins (not shown) for receiving and delivering the substrate G are provided.

As shown in FIG. 2, among the separation plates forming the first flat plate 61, the separation plate 61b on the outer side is a rectangular frame-shaped outer flat plate, and on the inner side of the outer flat plate 616, a gap 66 is provided as the other The inner plate of the rectangular shape of the separating plate 61a in plan view.

The inner flat plate 61a is provided with a temperature-regulating medium flow path 62a that snakes to cover the entire area of the rectangular plane. In the temperature-regulating media flow path 62a of the illustrated example, for example, one end 62a1 of the temperature-regulating media flow path 62a is the inflow portion of the temperature-regulating medium, and the other end 62a2 is the outflow portion of the temperature-regulating medium.

In addition, the outer flat plate 61b is provided with a temperature-regulating medium flow path 62b in which the outgoing and return flows of the temperature-regulating medium are continuous so as to cover the entire area of the rectangular frame shape. In the temperature-regulating media flow path 62b of the illustrated example, for example, one end 62b1 of the temperature-regulating media flow path 62b is the inflow portion of the temperature-regulating medium, and the other end 62b2 is the outflow portion of the temperature-regulating medium.

As the temperature adjustment medium, a refrigerant is applied, and the refrigerant is applied to GALDEN (registered trademark) or Fluorinert (registered trademark).

The temperature-regulating media flow path 62a built in the inner flat plate 61a and the temperature-regulating media flow path 62b built in the outer flat plate 61b are both examples of the "temperature-regulating section". The temperature control unit includes a heater and the like in addition to the temperature control medium channels 62a and 62b through which the temperature control medium flows. More specifically, both of the inner flat plate 61a and the outer flat plate 61b, as the temperature adjustment section, have only a heater-only type as well as a heater-only type in addition to the example shown in the figure of the temperature-regulating medium flow path. Types of both the temperature channel and the heater, etc. In addition, the temperature adjustment unit does not include the temperature adjustment sources of the coolers 81, 84, etc. in the illustrated example, and at most refers only to the temperature adjustment member built into the first flat plate 61 constituting the substrate mounting table 60. In addition, the heater as the resistor is formed of tungsten or molybdenum, or any one of these metals and a compound such as alumina or titanium.

Returning to FIG. 1, at both ends of the temperature-regulating medium flow path 62a built into the inner flat plate 61a, and the transfer piping 64a for supplying the temperature-regulating medium to the temperature-regulating medium flow path 62a, and discharged to flow through the temperature-regulating medium flow path 62a to increase the temperature The return pipe 64b of the temperature control medium is connected. The conveyance piping 64a and the return piping 64b communicate with the conveyance flow path 82 and the return flow path 83, respectively, and the conveyance flow path 82 and the return flow path 83 communicate with the cooler 81. The cooler 81 has a body portion that controls the temperature or discharge flow rate of the temperature-regulating medium, and a pump (both not shown) that pressurizes the temperature-regulating medium.

The cooler 81, the conveyance flow path 82, and the return flow path 83 form a unique temperature adjustment source 80A on the inner flat plate 61a.

On the other hand, at both ends of the temperature-regulating medium flow path 62b built into the outer flat plate 61b, and the transfer piping 64c for supplying the temperature-regulating medium to the temperature-regulating medium flow path 62b, and the discharge pipe circulates to increase the temperature The return pipe 64d of the temperature control medium is connected. The conveyance piping 64c and the return piping 64d communicate with the conveyance flow path 85 and the return flow path 86, respectively, and the conveyance flow path 85 and the return flow path 86 communicate with the cooler 84. The cooler 84 has a body portion that controls the temperature of the temperature-regulating medium or the discharge flow rate, and a pump (both not shown) that pressure-feeds the temperature-regulating medium.

The cooler 84, the conveyance flow path 85, and the return flow path 86 form a unique temperature adjustment source 80B on the outer flat plate 61b.

The substrate stage 60 is a stage for temperature division and temperature adjustment by supplying temperature-adjusting media of different temperatures to the central area corresponding to the inner flat plate 61a and the edge area corresponding to the outer flat plate 61b. The zones are adjusted to different temperatures. Therefore, the inner flat plate 61a and the outer flat plate 61b are tied to each having a unique temperature adjustment source 80A, 80B.

In addition, even if the cooler is made common, and, for example, a temperature adjustment mechanism such as a heater is provided in the conveyance channels 82 and 85, and the temperature of the temperature adjustment medium is changed by each temperature adjustment mechanism, the temperature adjustment medium channels 62a , 62b can also provide different types of temperature control media. In addition, when the temperature adjustment unit includes a heater, the temperature adjustment source includes a DC power supply (heater power supply) connected to the heater via a power supply line.

In the case where a temperature sensor such as a thermocouple is provided on the upper surface of the electrostatic fixture 67 or the second plate 63, the monitoring information caused by the temperature sensor is sent to the control unit 90 at any time. Based on the monitoring information, the control unit 90 executes the temperature adjustment control of the substrate mounting table 60 (the electrostatic jig 67), the second flat plate 63, and the substrate G. More specifically, the control unit 90 adjusts the temperature or flow rate of the temperature-regulating medium supplied from the coolers 81 and 84 to the conveyance channels 82 and 85. In addition, by circulating the temperature-adjusting medium whose temperature is adjusted or the flow rate is adjusted in the temperature-adjusting medium channels 62a and 62b, it is possible to control the temperature of the central region and the edge region of the substrate mounting table 60 at a specific temperature, respectively. Between the electrostatic jig 67 and the substrate G, a heat transfer gas such as He gas is supplied from the heat transfer gas supply unit via a supply flow path (neither of which is shown). In the electrostatic jig 67, a plurality of through holes (not shown) are provided in the opening, and the supply channel is buried in the second flat plate 63 and the like. By supplying the heat transfer gas to the lower surface of the substrate G through the supply flow path and through the through hole provided in the electrostatic jig 67, the temperature of the temperature-controlled substrate mounting table 60 is quickly transferred to the substrate G via the heat transfer gas , The temperature adjustment control of the substrate G is performed.

As shown in FIG. 1, a segment is formed by the outer periphery of the electrostatic jig 67 and the second flat plate 63 and the upper surface of the rectangular member 68, and a rectangular frame-shaped focus ring 69 is placed on the segment. In the state where the focus ring 69 is provided in the segment portion, the upper surface of the focus ring 69 becomes lower than the upper surface of the electrostatic jig 67. The focus ring 69 is made of ceramics such as alumina or quartz. In a state where the substrate G is placed on the mounting surface of the electrostatic jig 67, the inner end portion of the upper end surface of the focus ring 69 is covered by the outer peripheral portion of the substrate G.

Below the inner flat plate 61a, a power supply member 70 extending downward is connected, and a power supply line 71 is connected to the lower end of the power supply member 70, and the power supply line 71 is connected to a high-frequency bias power supply via a matching device 72 that performs impedance matching Power supply 73. That is, the inner flat plate 61a is electrically connected to the high-frequency power supply 73. By applying high-frequency power such as 13.56 MHz from the high-frequency power source 73 to the substrate mounting table 60, ions generated by the high-frequency power source 19 as a source for plasma generation can be attracted to the substrate G. Accordingly, in the plasma etching process, the etching rate and the etching selectivity can be improved.

As shown in FIG. 1, the high-frequency power supply 73 is only connected to the inner flat plate 61a. In addition, although the inner flat plate 61a and the outer flat plate 61b are separated via the gap 66, the upper surfaces of the inner flat plate 61a and the outer flat plate 61b are integrally connected to each other by a second flat plate 63 made of stainless steel, for example. Therefore, the high-frequency power applied to the inner flat plate 61a from the high-frequency power supply 73 may be conducted to the outer flat plate 61b.

In addition, as shown in FIGS. 1 and 3, the inner flat plate 61 a and the outer flat plate 61 b are connected to each other by a conductive connecting plate 65 on their lower surfaces. In the illustrated embodiment, with respect to the rectangular frame-shaped gap 66, two connecting plates 65 are arranged at the short side of the rectangle with a gap therebetween, and one connecting plate 65 is arranged at the central position on the long side of the rectangle. In this way, by connecting the lower surfaces of the inner flat plate 61a and the outer flat plate 61b with the conductive connecting plate 65, the conduction from the inner flat plate 61a to the outer flat plate 61b can be further promoted. In addition, the shape of the coupling plate 65 is not limited to the one illustrated in the figure, and a rectangular frame-shaped coupling plate that completely surrounds the rectangular frame-shaped gap 66 may be applied.

The substrate mounting table 60 is a mounting table that individually controls the temperature of the central area and the edge area of the substrate mounting table 60 by flowing, for example, temperature adjustment media having different temperatures to the inner flat plate 61a and the outer flat plate 61b. Therefore, a gap 66 is provided between the inner flat plate 61a and the outer flat plate 61b to separate the two. For example, relative to the outer flat plate 61b, the relative performance of the inner flat plate 61a is controlled at a high temperature. When both the inner flat plate 61a and the outer flat plate 61b are formed of aluminum having high thermal conductivity, for example, the entire inner flat plate 61a may be set to a uniform high temperature state, and the entire outer flat plate 61b may be set to a uniform low temperature state.

It is assumed that if the second flat plate 63 or the connecting plate 65 connected to the inner flat plate 61a and the outer flat plate 61b has a high thermal conductivity, it will hinder the temperature adjustment state of the inner flat plate 61a and the outer flat plate 61b, which are temperature-controlled at different temperatures, respectively. . Specifically, for example, the heat conduction from the relatively high temperature inner flat plate 61a to the relatively low temperature outer flat plate 61b is promoted, and the temperature of both flat plates becomes close. Therefore, the second flat plate 63 having a lower thermal conductivity than the first flat plate 61 is arranged on the substrate mounting table 60. Further, as the thermal conductivity of the second flat plate 63 becomes lower, the heat transfer effect from the inner flat plate 61a to the outer flat plate 61b becomes less, and the second flat plate 63 has the lowest thermal conductivity among stainless steel. It is preferable that the field-iron stainless steel is formed. Furthermore, the connecting plate 65 is also formed of a metal material having a low thermal conductivity as in the second flat plate 63, and is preferably formed of Vostian iron-based stainless steel as in the second flat plate 63.

Furthermore, the analysis performed by the inventors verified that as the thickness of the second flat plate 63 (thickness t1 shown in FIG. 1) becomes thinner, the heat transfer effect from the inner flat plate 61 a to the outer flat plate 61 b becomes lower. This analysis result will be described in detail below, and the thickness t1 of the second flat plate 63 is preferably in the range of, for example, 20 mm to 45 mm.

Since the second flat plate 63 has the same plane size as the FPD substrate G, when the thickness t1 of the second flat plate 63 is thinner than 20 mm, there will be structural problems such as plastic deformation due to deflection, etc. The thickness t1 is preferably set to 20 mm or more. In addition, as the material of the substrate mounting table, the thickness of the highly versatile stainless steel is about 45 mm (material cost) and the heat transfer effect is preferably set to 45 mm or less.

The control unit 90 controls the various components of the substrate processing apparatus 100, for example, the coolers 81, 84 constituting the temperature adjustment sources 80A, 80B, or the high-frequency power sources 19, 73, the processing gas supply unit 40, based on Monitor the operation of the gas exhaust unit 50 etc. The control unit 90 includes a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). The CPU executes specific processing according to the recipe (process recipe) stored in a memory area such as RAM. The recipe sets control information of the substrate processing apparatus 100 relative to the process conditions. The control information includes, for example, the gas flow rate, the pressure in the processing container 10, the temperature in the processing container 10, the temperature of the inner flat plate 61a and the outer flat plate 61b constituting the first flat plate 61, the process time, and the like. For example, the recipe includes a process of controlling the temperature of each of the inner flat plate 61a and the outer flat plate 61b to a temperature suitable for plasma etching and the like. Here, "intrinsic temperature suitable for plasma etching treatment" means that the etching rate of the entire range of the insulating film or electrode film of the wide substrate G for FPD becomes the same degree, which is suitable for in-plane uniformity High processing temperature inherent in each area.

The program applicable to the recipe and control unit 90 may be stored in, for example, a hard disk, an optical disk, an optical disk, or the like. In addition, the recipes are set in the control unit 90 even if they are stored in a CD-ROM, DVD, memory card, or other memory media that can be read by a portable computer. It can be out of shape. The control unit 90 includes other input devices such as a keyboard or a mouse that performs input operations of commands, a display device such as a display that visualizes the operation status of the substrate processing device 100, and an output device such as a printer. user interface.

(Modification of the first tablet) Next, a modification of the first flat plate having plural separation plates will be described with reference to FIG. 4. 4A to 4D are plan views simulating a modification of the first flat plate.

The first flat plate 61A shown in FIG. 4A is a rectangular metal plate viewed from the center toward the outer peripheral side, and is divided into three regions by two rectangular frame-shaped gaps 66, and has an inner flat plate 61c, an intermediate plate 61d, and an outer flat plate 61e. The inner flat plate 61c, the middle plate 61d, and the outer flat plate 61e each have a built-in temperature-regulating portion such as a temperature-regulating body flow path or a heater, and each temperature-regulating portion has its own temperature-regulating source (none of which is shown). For example, the temperature adjustment control of each flat plate is performed so that the temperature in the order of the inner flat plate 61c, the intermediate plate 61d, and the outer flat plate 61e becomes lower.

In addition, the first flat plate 61B shown in FIG. 4B is divided into 5 regions with four corners of a metal flat plate with a rectangular shape or L-shaped or reverse L-shaped in plan view, and has a center plate 61f and four corners Plate 61g. For example, the temperature adjustment control of each flat plate is performed so that the center plate 61f has a relatively high temperature relative to the corner plate 61g.

In addition, the first flat plate 61C shown in FIG. 4C is divided into five regions with a center 66 or a reverse-shaped gap at the center position of the four end edges of the rectangular metal flat plate in plan view, and has a central plate 61h and 4 end central plates 61j. For example, the temperature adjustment control of each flat plate is performed so that the center plate 61h becomes relatively high relative to the end center plate 61j.

Further, the first flat plate 61D shown in FIG. 4D is a rectangular metal flat plate that is divided into nine lattice-shaped regions in plan view, and has a center plate 61k, a corner plate 61m, and a side center plate 61n. The center panel, corner panel, and side center panel each have a built-in temperature-regulating portion such as a temperature-regulating media flow path or a heater, and each temperature-regulating portion has its own temperature-regulating source (none of which is shown). For example, the temperature adjustment control of each flat plate is performed in such a manner that the temperature decreases in the order of the center plate 61k, the corner plate 61m, and the side center plate 61n.

Even in the first flat plate according to any of the modified examples, by performing temperature adjustment control specific to each region, it is possible to realize processing with high in-plane uniformity on the wide-format substrate G for FPD.

[Temperature analysis] Next, the temperature analysis for verifying the temperature and temperature difference between the inner and outer flat plates when the thickness of the second flat plate is changed variously will be described with reference to FIGS. 5 and 6. Here, FIG. 5A is a side view of a substrate mounting table model used for temperature analysis, and FIG. 5B is a view in the direction of arrows B-B of FIG. 5A, and is a cross-sectional view of the first flat plate model.

(Analysis summary) The present inventor created the substrate mounting table model M shown in FIGS. 5A and 5B in a computer. The substrate mounting table model M includes a first flat-plate model M1 and a second flat-plate model M2, and is an analysis model with a rectangular plan view. The first tablet model M1 has an inner tablet model M1a with a rectangular shape in plan view and an outer tablet model M1b with a rectangular frame shape in plan view, and is spaced apart from each other via a gap model G. The inner flat plate model M1a has a meandering temperature-regulating media flow path model M3, and the outer flat plate model M1b has a meandering temperature-regulating media flow path model M4.

The first flat plate model M1 has analytical elements for aluminum, and the second flat plate model M2 has analytical elements for Vostian iron-based stainless steel. Furthermore, as shown in FIG. 5A, the width of the gap model G is set to 20 mm, the thickness of the first flat-plate model M1 is set to 45 mm, and the thickness t1 of the second flat-plate model M2 is regarded as three types of thickness, The temperature analysis is performed on the substrate mounting table model M having the second flat plate model M2 of each thickness. Three kinds of thickness t1 are 20mm, 25mm and 35mm.

In the temperature analysis, the temperature-regulating medium of 50°C is circulated to the temperature-regulating media flow path model M3 shown in FIG. 5B, and the temperature-regulating medium of 0°C is circulated to the temperature-regulating media flow path model M4.

(Analysis result) FIG. 6A shows the analysis result of the temperature distribution on the X axis of FIG. 5B, and FIG. 6B shows the analysis result of the temperature distribution on the O-C axis connecting the center point O of the first flat panel model M1 and the upper right corner point C. In addition, Table 1 below shows the maximum temperature (temperature at the center point O) and the minimum temperature (temperature at the corner point C) on the O-C axis in each case, and the difference between the two.

From FIGS. 6A and 6B, it can be seen that at the center point O, the temperature becomes the highest, and the temperature decreases slowly toward the edge. In each gap model G, there is a curve inflection point, and at the intersection point B, A or At the corner C, the temperature becomes the lowest temperature distribution.

Furthermore, from FIG. 6A, FIG. 6B and Table 1, in the case 3 of the thinnest 20 mm, the highest temperature becomes the highest (37.1°C), the lowest temperature becomes the lowest (11.1°C), and the difference becomes the largest (26.0 ℃). Through this temperature analysis, it was verified that the thinner the thickness t1 of the second flat plate model M2 is, the higher temperature control can be achieved in the central region and the edge region of the substrate stage model M.

In this way, based on the results of temperature analysis, it is preferable to make the thickness t1 of the second flat plate as thin as possible. On the other hand, as described above, it is also important to set the thickness t1 from the viewpoint of structural endurance, since the second flat plate has the same plane size as the substrate G for FPD. Accordingly, the thickness t1 of the second flat plate is preferably set to a thickness of 20 mm or more.

[Experiment on temperature dependence of etching rate and selection ratio] Next, experiments on the temperature dependence of the etching rate and the selection ratio of the plural insulating films will be described with reference to FIGS. 7 to 11. Here, FIG. 7 is a diagram simulating a plan view of a substrate mounting table suitable for experiments.

(Experiment summary) In this experiment, the temperature of the substrate mounting table was changed to evaluate the process performance in each area. In the experiment, the central rectangular area in plan view corresponding to the inner plate was defined as the central area, and the rectangular area in plan view rectangular shape corresponding to the outer plate was defined as the edge area. In addition, the middle line between the center area and the edge area is set as the middle area.

In this experiment, the substrate processing device that houses the substrate stage is an inductively coupled plasma processing device. The pressure in the chamber is set to 5 mTorr to 15 mTorr (0.665 Pa to 1.995 Pa), and both the ICP source power and the bias power are set. Into 5kW to 15kW. Furthermore, as the etching gas, a gas selected from an F-based gas such as CHF ₃ , CH ₂ F ₂ , CH ₃ F, CF ₄ , C ₄ F ₈ , C ₅ F ₈ and the like, and a diluent gas such as Plasma etching is performed from a mixed gas composed of selected gases such as He, Ar, and Xe.

In this experiment, for the test body where the SiN film is formed on the substrate, the test body where the SiO film is formed on the substrate, and the Si film (Poly-Si film, polysilicon film) for the gate electrode is formed on the substrate The test body verified the temperature dependence of the etch rate of the respective insulating film or electrode film. In addition, the temperature dependence of the SiO/Si selection ratio (selectivity of SiO film) in the multilayer film in which the Si film and the SiO film are formed on the substrate is also verified.

(Experimental results) FIG. 8 is a graph showing the experimental results of the temperature dependence of the etching rate of the SiN film. 9 is a graph showing the experimental results of the temperature dependence of the etching rate of the SiO film. 10 is a graph showing the experimental results of the temperature dependence of the etching rate of the Si film. In addition, FIG. 11 is a graph showing the experimental results of the temperature dependence of the SiO/Si selection ratio.

In each of the graphs, the solid line curve is the temperature dependence of the etching rate and the selection ratio in the edge region of the substrate stage shown in FIG. 7, and the broken line curve is the etching in the central region shown in FIG. 7. Curve of temperature dependence of rate and selection ratio. In addition, the one-dot chain line is a curve regarding the temperature dependence of the etching rate and the selection ratio in the middle region shown in FIG. 7.

From Fig. 8, it is verified that the SiN film has temperature dependence. Regarding the etching rate of the edge region, it can be seen that there is no large difference in the etching rate between low temperature and high temperature. In addition, regarding the etching rate in the central region, it is known that the etching rate at a low temperature is low, and the etching rate at a high temperature is high, which is equivalent to the etching rate at a low temperature in the edge region.

According to the experimental results shown in Fig. 8, it is verified that the etching process of the SiN film can cover the entire range of the substrate mounting table by controlling the temperature of the edge region of the substrate mounting table to a low temperature and the central region to a high temperature. A uniform and high etching rate is obtained as much as possible.

Next, from FIG. 9, it is verified that the SiO film has no temperature dependence. According to this, it can be seen that when the SiO film is etched, it is not necessary to perform temperature adjustment control according to regions.

Next, from FIG. 10, it is verified that the Si film has temperature dependence. Regarding the etching rate of the edge region, it can be seen that there is a certain difference in the etching rate between the low temperature and the high temperature, and there is no difference in the etching rate between the low temperature and the high temperature between the low temperature region and the high temperature region.

According to the experimental results shown in FIG. 10, it is verified that the etching process of the Si film can cover the entire range of the substrate mounting table by controlling the temperature of the edge region of the substrate mounting table to a low temperature and the central region to a high temperature. As much as possible to obtain a uniform etching rate. In addition, by comparing FIGS. 8 and 9 and 10, it can be seen that the etching rate of the Si film is lower than the etching rate of the insulating film such as the SiN film or the SiO film. This situation involves the SiO/Si selection ratio shown in FIG. 11 becoming higher.

From Fig. 11, it is verified that the SiO/Si selection ratio has temperature dependence. Regarding the selection ratio of the edge region, it can be seen that it is high at low temperatures, and it rapidly decreases as it moves toward high temperatures, indicating a tendency contrary to the end-edge graphs shown in FIGS. 8 and 10. In addition, the selection ratio of the central region is high at low temperatures (higher than the edge graph), and gradually decreases as it moves toward a high temperature, but it is the same as the selection ratio at the low temperature of the edge graph.

From the experimental results shown in Fig. 11, it is verified that the etching process of the SiO film formed on the Si film can be obtained by adjusting the temperature of the edge region of the substrate mounting table to a low temperature and the central region to a high temperature. It covers the entire range of the substrate mounting table as uniformly as possible and has a high SiO selectivity.

Through this experiment, even in either the etching process of the SiN film or the etching process of the Si film, by controlling the temperature of the edge region of the substrate mounting table to a low temperature and the central region to a high temperature, it is possible to Etching as uniformly as possible across the entire range of the substrate. In particular, in the case of the SiN film, it is possible to obtain a high etching rate in addition to performing as uniform an etching process as possible over the entire range of the cover substrate. Furthermore, even with regard to the etching process of the SiO film formed on the Si film, by controlling the temperature of the edge region of the substrate stage to a low temperature and the central region to a high temperature, it becomes possible to cover the substrate stage As far as possible, a uniform and high SiO/Si selection ratio is obtained.

In addition, depending on the type of insulating film such as SiN film or SiO film, and the type of electrode film such as Si film, the temperature adjustment temperature suitable for each of the edge region and the central region will be different, depending on the type of insulating film or electrode film Type, it is better to perform temperature adjustment control for each area with a temperature adjustment temperature suitable for each.

As for the configuration and the like mentioned in the above-mentioned embodiments, even other embodiments combining other constituent elements and the like are possible. Furthermore, the present disclosure is not limited to the configuration shown here. Regarding this point, it can be changed without departing from the gist of the present disclosure, and can be appropriately determined according to its application type.

For example, although the substrate processing apparatus 100 of the illustrated example is described with an inductively coupled plasma processing apparatus having a dielectric window, an inductively coupled plasma processing apparatus including a metal window may be used instead of a dielectric window Yes, even for other types of plasma processing equipment. Specifically, electron cyclotron resonance plasma (ECP), spiral wave excitation plasma (Helicon Wave Plasma; HWP), and flat plate plasma (Capacitively coupled Plasma; CCP) may be mentioned. In addition, microwave excitation surface wave plasma (Surface Wave Plasma; SWP) can be cited. These plasma processing devices include ICP, either of which can independently control ion flux and ion energy, and can freely control the etching shape or selectivity, and can obtain high electron density of about 10 ¹¹ or even 10 ¹³ cm ^-3 .

Furthermore, although the substrate processing apparatus 100 has a high-frequency electrode due to the high-frequency power supply 19 on the opposite surface of the substrate G, and a high-frequency electrode due to the high-frequency power supply 73 on the substrate mounting table 60, even It may be a substrate processing apparatus having only one of the high-frequency electrodes.

In addition, each separation plate constituting the first flat plate 61 of the substrate processing apparatus 100 has a built-in heater as a temperature adjustment section, and when a film forming apparatus is formed using a thermal CVD method, plasma generation is not necessarily required.

Furthermore, even if it is applied on the upper surface of the second flat plate 63, there is no need for a substrate mounting table provided with an electrostatic jig 67 or a focus ring 69.

10: Processing container 19: High frequency power supply 60: substrate mounting table 61: 1st tablet 61a: Separation plate (inner flat plate) 61b: Separation plate (outside flat plate) 62a, 62b: temperature regulating media flow path (temperature regulating section) 63: 2nd tablet 65: link board 66: clearance 73: High frequency power supply (power supply) 80A, 80B: temperature adjustment source 81, 84: cooler 90: Control Department 100: substrate processing device G: substrate

FIG. 1 is a cross-sectional view showing an example of a substrate mounting table and a substrate processing apparatus related to an embodiment. FIG. 2 is a view in the direction of arrows II-II of FIG. 1 and is a cross-sectional view of the first flat plate. FIG. 3 is a view taken in the direction of arrows III-III of FIG. 1 and is a diagram of the first flat plate viewed from below. 4A is a plan view of an example of a simulated first flat panel. 4B is a plan view of another example of the simulated first flat panel. 4C is a plan view of yet another example of the simulation of the first flat panel. 4D is a plan view of yet another example of the simulation of the first flat panel. FIG. 5A is a side view of a substrate stage model used for temperature analysis. FIG. 5B is a view in the direction of arrows B-B in FIG. 5A, and is a cross-sectional view of the first flat panel model. FIG. 6A is a graph showing the temperature analysis result on line B-A in FIG. 5B. FIG. 6B is a graph showing the results of temperature analysis on the line O-C in FIG. 5B. FIG. 7 is a diagram simulating a top view of a substrate stage applicable in an experiment for verifying etching rate and selection ratio. FIG. 8 is a graph showing the experimental results of the temperature dependence of the etching rate of the SiN film. FIG. 9 is a graph showing the experimental results of the temperature dependence of the etching rate of the SiO film. FIG. 10 is a graph showing the experimental results of the temperature dependence of the etching rate of the Si film. FIG. 11 is a graph showing experimental results on the temperature dependence of the SiO/Si selection ratio.

10: Processing container

11: Dielectric board

12: antenna room

13: chamber

13a: side wall

13b: Move out and move in

13c: ground wire

13d: exhaust port

14: Support box

15: high frequency antenna

15a: antenna

16: Power supply component

17: Power supply line

18: matcher

19: High frequency power supply

20: Gate valve

30: sprinkler

31: Gas flow path

32: Gas discharge hole

40: Process gas supply unit

41: Gas supply pipe

42: On-off valve

43: Flow controller

44: Process gas supply source

50: gas exhaust

51: gas exhaust pipe

52: On-off valve

53: Exhaust

60: substrate mounting table

61: 1st tablet

61a: Separation plate (inner flat plate)

61b: Separation plate (outside flat plate)

62a, 62b: temperature regulating media flow path (temperature regulating section)

63: 2nd tablet

64a: Transfer piping

64b: return piping

64c: Transfer piping

64d: return piping

65: link board

66: clearance

67: Electrostatic fixture

67a: electrode

68: rectangular member

69: Focus ring

70: Power supply component

71: Power supply line

72: matcher

73: High frequency power supply (power supply)

74: power supply line

75: DC power supply

80A, 80B: temperature adjustment source

81, 84: cooler

83: Return to the stream

85: Handling flow path

86: Return to the flow path

90: Control Department

100: substrate processing device

S: processing space

G: substrate

Claims (13)

A substrate mounting table is used to adjust the temperature of the substrate when the substrate is processed in the processing container. The characteristics of the substrate mounting table include: The first flat plate is formed by a plurality of metal separation plates separated by a gap; and The second flat plate made of metal, which is in contact with each of the above-mentioned separation plates, has a lower thermal conductivity than the first flat plate, Each of the above-mentioned separation plates has a built-in temperature-adjusting section that performs unique temperature adjustment. The substrate mounting table as described in claim 1, wherein The second flat plate having an upper surface on which the substrate is placed is disposed on the upper surface of the first flat plate. The substrate mounting table as described in claim 1 or 2, wherein The second flat plate system is formed of Vostian iron-based stainless steel. The substrate mounting table as described in claim 3, where The first flat plate system is formed of aluminum or aluminum alloy. The substrate mounting table as described in any one of claims 1 to 4, wherein The thickness of the second flat plate is in the range of 20 mm to 45 mm. The substrate mounting table as described in any one of claims 1 to 5, wherein The separation plate of any one is electrically connected to a power source, and the other separation plates are connected to the separation plate to which the power source is connected via a conductive connecting plate. The substrate mounting table as described in claim 6, wherein The above-mentioned coupling plate system is formed of Vostian iron-based stainless steel. The substrate mounting table as described in any one of claims 1 to 7, wherein The temperature adjustment unit includes a heater and at least one of temperature control medium flow paths through which the temperature control medium flows. A substrate processing device includes a processing container, a substrate mounting table for placing a substrate in the processing container for temperature adjustment, and a temperature adjustment source for the substrate mounting table. The substrate processing device includes: The above substrate mounting table includes: The first flat plate is formed by a plurality of metal separation plates separated by a gap; and The second flat plate made of metal, which is in contact with each of the above-mentioned separation plates, has a lower thermal conductivity than the first flat plate, Each of the above-mentioned separation plates has a built-in temperature adjustment section for inherent temperature adjustment, The temperature adjustment unit performs temperature adjustment on the temperature adjustment unit. The substrate processing apparatus according to claim 9, wherein The temperature adjustment unit has a heater and at least one of the temperature adjustment medium flow paths through which the temperature adjustment medium flows, The temperature adjustment source corresponding to the heater is a heater power supply, and the temperature adjustment source corresponding to the temperature adjustment medium channel is a cooler. The substrate processing apparatus according to claim 9 or 10, wherein The above substrate processing apparatus further includes a control unit, The control unit executes a process of adjusting the temperature of the temperature adjustment source at each specific temperature with respect to the temperature adjustment source by the temperature adjustment unit included in each separation plate. The substrate processing apparatus according to claim 11, wherein The above substrate mounting table has a rectangular shape in plan view, The separating plate has a rectangular frame-shaped outer flat plate, and a rectangular inner plate in a plan view arranged inside the outer flat plate with the gap therebetween, Both the above-mentioned outer plate and the above-mentioned inner plate have the above-mentioned temperature-regulating media flow path built in, The control unit implements the temperature-regulating source for the temperature-regulating source to cause the temperature-regulating medium flowing through the temperature-regulating media flow path of the outer flat plate to have a relatively high-temperature temperature-regulating medium flowing through the temperature-regulating media flow path of the inner flat plate. control. The substrate processing apparatus according to any one of claims 9 to 12, wherein The second flat plate having an upper surface on which the substrate is placed is disposed on the upper surface of the first flat plate.

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