TW202011096A - Pixel structure - Google Patents

Abstract

A pixel structure includes a first pixel, a second pixel, a data line and a black matrix. The first pixel includes a first color resist. The second pixel includes a second color resist. The first color resist and the second color resist are arranged in a first direction. The data line includes a first line segment and a second line segment, extending along a second direction. The first direction and the second direction intersect each other. The black matrix includes a first portion. The first portion is overlapped with the first line segment, and not overlapped with the second line segment. The first color resist and the second color resist stack on each other to form an overlapping region. The overlapping region is overlapped with the second line segment. The first color resist and the second color resist disposed on the first portion are not overlapped with each other.

Description

Pixel structure

The invention relates to a pixel structure.

With the development of consumer electronics and communication products, Liquid Crystal Display (LCD) has been widely used in LCD TVs, notebook computers, desktop computers, and smart phones. However, as the pixel resolution of liquid crystal displays continues to improve, the size of each pixel unit must become smaller and smaller. At present, there are still issues that need to be overcome due to process limitations and device configuration design.

The invention relates to a pixel structure, which can have a high aperture ratio.

According to an embodiment of the invention, a pixel structure is proposed, which includes a first pixel, a second pixel, a data line, and a black matrix layer. The first pixel includes a first color block. The second pixel includes a second color block. The first color resist and the second color resist are arranged in the first direction. The data line includes a first line segment and a second line segment extending in the second direction. The first direction and the second direction are staggered with each other. The black matrix layer includes a first black component. The first black part overlaps the first line segment and does not overlap the second line segment. The first color resist and the second color resist are stacked on each other to form an overlapping area. The overlapping area overlaps the second line segment, and the first color resist and the second color resist provided on the first black member do not overlap each other.

In order to have a better understanding of the above and other aspects of the present invention, the following examples are specifically described in conjunction with the accompanying drawings as follows:

Hereinafter, the present invention will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Exemplary embodiments are described herein with reference to cross-sectional views that are schematic diagrams of idealized embodiments. Therefore, it is possible to anticipate a change in the shape of the graph as a result of, for example, manufacturing techniques and/or tolerances. Therefore, the embodiments described herein should not be construed as being limited to the specific shapes of the regions as shown herein, but include deviations in shapes caused by manufacturing, for example. For example, an area shown or described as flat may generally have rough and/or non-linear characteristics. In addition, the acute angle shown may be round. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the precise shapes of the regions, and are not intended to limit the scope of the claims.

The following is a description with some embodiments. It should be noted that this disclosure does not show all possible embodiments, and other implementations not proposed in this disclosure may also be applicable. Furthermore, the size ratios in the drawings are not drawn according to the actual products. Therefore, the description and illustrations are only used to describe the embodiments, not to limit the scope of disclosure of the present disclosure. In addition, the descriptions in the embodiments, such as the detailed structure, process steps and material application, etc., are for illustrative purposes only, and do not limit the scope of the disclosure to be protected. The details of the steps and structure of the embodiments can be changed and modified according to the needs of the actual application process without departing from the spirit and scope of the present disclosure. The following description uses the same/similar symbols to indicate the same/similar components.

Please refer to Figure 1 to Figure 4. FIG. 1 is a schematic diagram of a pixel structure active device array substrate according to an embodiment of the invention. FIG. 2 is a schematic diagram of a color filter substrate with pixel structure. Figure 3 is a cross-sectional view of the pixel structure. FIG. 4 is a schematic diagram showing the arrangement of color resist, black matrix layer and data lines of the pixel structure. Figure 3 can correspond to the AB hatching area in the structures of Figures 1, 2 and 4. For the sake of simplicity, Figures 2 and 4 show the component arrangement below the second substrate through the perspective.

Please refer to Figure 1 to Figure 4. The pixel structure 102 may include multiple pixels, for example, including a first pixel P1, a second pixel P2, a third pixel P3, and a fourth pixel P4. The first pixel P1 and the second pixel P2 are arranged in the first direction D1. The third pixel P3 and the fourth pixel P4 are arranged in the first direction D1. The first pixel P1 and the third pixel P3 are arranged in the second direction D2. The second pixel P2 and the fourth pixel P4 are arranged in the second direction D2. The first direction D1 and the second direction D2 cross each other. In one embodiment, the first direction D1 is substantially perpendicular to the second direction D2. For example, the first direction D1 is the X direction, and the second direction D2 is the Y direction. The first pixel P1 includes a first sub-pixel SP1 and a second sub-pixel SP2 arranged in the second direction D2. The second pixel P2 includes a third sub-pixel SP3 and a fourth sub-pixel SP4 arranged in the second direction D2. The third pixel P3 includes a first sub-pixel SP1' and a second sub-pixel SP2' arranged in the second direction D2. The fourth pixel P4 includes a third sub-pixel SP3' and a fourth sub-pixel SP4' arranged in the second direction D2.

Please refer to Figure 1. The first pixel P1 includes a first sub-pixel SP1, a second sub-pixel SP2, a first switching element T1, a second switching element T2, and a third switching element T3. The first sub-pixel SP1 includes a first pixel electrode PE1. The second sub-pixel SP2 includes a second pixel electrode PE2. The second pixel P2 includes a third sub-pixel SP3, a fourth sub-pixel SP4, a fourth switching element T4, a fifth switching element T5, and a sixth switching element T6. The third sub-pixel SP3 includes a third pixel electrode PE3. The fourth sub-pixel SP4 includes a fourth pixel electrode PE4. The first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3, and the fourth pixel electrode PE4 may be a transparent electrode layer (such as indium tin oxide, etc.), a reflective electrode layer, or semi-transmission and semi-reflection Electrode layer. The first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3, and the fourth pixel electrode PE4 may be provided with alignment patterns (alignment slits or alignment protrusions).

Please refer to Figure 1 and Figure 3. In this embodiment, the first switching element T1, the second switching element T2, and the third switching element T3 are disposed on the first substrate 112. The first switching element T1 includes a first gate G1, a first channel layer CH1, a first source SE1 and a first drain DE1. The first gate G1 is electrically connected to the scan line SL, and the first source SE1 is electrically connected to the data line DL1. The second switching element T2 includes a second gate G2, a second channel layer CH2, a second source SE2, and a second drain DE2. The second gate G2 is electrically connected to the scan line SL, and the second source SE2 is electrically connected to the data line DL1 through the first source SE1. The first channel layer CH1 and the second channel layer CH2 may be the same semiconductor pattern. The third switching element T3 includes a third gate G3, a third channel layer CH3, a third source SE3, and a third drain DE3. The third gate G3 is electrically connected to the scan line SL, the third source SE3 is connected to the second drain DE2, and the third drain DE3 is electrically connected to the signal line CL1. Similarly, in this embodiment, the fourth switching element T4, the fifth switching element T5, and the sixth switching element T6 are provided on the first substrate 112. The fourth switching element T4 is electrically connected to the scan line SL and the data line DL2. The fifth switching element T5 is electrically connected to the scan line SL and the data line DL2. The sixth switching element T6 is electrically connected to the scanning line SL and the signal line CL2. Furthermore, the detailed structure of the fourth switching element T4, the fifth switching element T5, or the sixth switching element T6 is similar to the aforementioned first switching element T1, second switching element T2, or third switching element T3, and will not be described here. Repeat. In this embodiment, the scan line SL extends along the first direction D1; the data lines DL1, DL2 extend along the second direction D2; and the signal lines CL1, CL2 extend along the second direction D2. The scan line SL and the data lines DL1, DL2 are interleaved with each other; the scan line SL and the signal lines CL1, CL2 are interleaved with each other.

In this embodiment, the first pixel electrode PE1 is electrically connected to the first drain electrode DE1 of the first switching element T1 through the contact window V1. The second pixel electrode PE2 is electrically connected to the second drain electrode DE2 of the second switching element T2 through the contact window V2. The third pixel electrode PE3 is electrically connected to the third switching element T3 through the contact window V3. The fourth pixel electrode PE4 is electrically connected to the fourth switching element T4 through the contact window V4.

Please refer to FIG. 1 again, the first pixel P1 further includes a first common electrode CE1. The second pixel P2 further includes a second common electrode CE2. The first common electrode CE1 extends in the second direction D2, and the second common electrode CE2 extends in the second direction D2. The first common electrode CE1 and the second common electrode CE2 are electrically connected to the common electrode line CES, wherein the common electrode line CES extends along the first direction D1. In this embodiment, the first common electrode CE1, the second common electrode CE2 and the common electrode line CES are electrically connected to the first voltage, and the signal lines CL1 and CL2 are electrically connected to the second voltage. In one embodiment, the first voltage may be different from the second voltage, whereby the transmittance of the pixel structure can be greatly improved.

In this embodiment, the first common electrode CE1 and the first pixel electrode PE1 partially overlap in the vertical projection direction D3 (for example, the Z direction); the first common electrode CE1 does not extend to the second sub-pixel SP2, the first The common electrode CE1 does not overlap with the second pixel electrode PE2 in the vertical projection direction D3, that is, the second sub-pixel SP2 does not have a common electrode. The second common electrode CE2 and the third pixel electrode PE3 partially overlap in the vertical projection direction D3 (for example, the Z direction); the second common electrode CE2 does not extend to the fourth sub-pixel SP4, and the second common electrode CE2 is vertically projected The direction D3 does not overlap with the fourth pixel electrode PE4, that is, the fourth sub-pixel SP4 does not have a common electrode.

The data line DL1 includes a first line segment DLP1 and a second line segment DLP2 extending in the second direction D2. The first line segment DLP1 is between the first pixel electrode PE1 and the third pixel electrode PE3. The second line segment DLP2 is between the second pixel electrode PE2 and the fourth pixel electrode PE4. The first common electrode CE1 and the second common electrode CE2 are respectively disposed on the first side DLS1 and the second side DLS2 opposite to the first line segment DLP1.

Please refer to FIG. 2. In an embodiment, the color filter substrate 106 may include a black matrix layer BM and color resist. For example, the first color resist CF1 of the first pixel P1, the second color resist CF2 of the second pixel P2, the third color resist CF3 of the third pixel P3, and the fourth color resist CF4 of the fourth pixel P4 Wait. The first color resist CF1 and the second color resist CF2 are arranged in the first direction D1. The black matrix layer BM includes a light-shielding stem BMK and a first black member BM1. The light-shielding stem BMK extends in the first direction D1. The light-shielding stem BMK includes a first side BMKS1 and a second side BMKS2 opposite to each other. The first black member BM1 extends from the first side BMKS1 of the light-shielding stem BMK in the second direction D2. The first black part BM1 includes a first side BM1S1, a second side BM1S2, and a third side BM1S3, and the third side BM1S3 is between the opposing first side BM1S1 and second side BM1S2. The first color resist CF1 is on the first side BM1S1 of the first black part BM1. The second color resistive CF2 is on the second side BM1S2 of the first black member BM1. The portions where the first color resist CF1 and the second color resist CF2 overlap the first black member BM1 in the vertical projection direction D3 are separated from each other by a pitch Q. In this embodiment, the first color resist CF1 and the second color resist CF2 are stacked on the second side BMKS2 side of the light-shielding stem BMK to form an overlapping area OV, but not limited to this, the first color resist CF1 The second color resister CF2 may not be stacked on the second BMKS2 side of the light-shielding stem BMK. The first color resist CF1, the second color resist CF2, the third color resist CF3, and the fourth color resist CF4 may include color resists of different colors. In an embodiment, the first color resist CF1 and the third color resist CF3 are color resists of the same color, and the second color resist CF2 and the fourth color resist CF4 are color resists of the same color. For example, but not limited to, the first color resist CF1 and the third color resist CF3 are green color resists, and the second color resist CF2 and the fourth color resist CF4 are blue color resists.

Please refer to Figure 3. The active device array substrate 104 includes a first substrate 112. The first substrate 112 includes but is not limited to a glass substrate. The first common electrode element CEE1 (including the common electrode line CES, the first common electrode CE1 and the second common electrode CE2), the scan line SL, and the second common electrode element CEE2 are provided on the first substrate 112. In one embodiment, the first common electrode element CEE1, the scanning line SL, and the second common electrode element CEE2 may include the same conductive material, or may be formed simultaneously using the same process, such as the first metal layer. The first insulating layer 114 is provided on the first common electrode element CEE1, the scanning line SL, and the second common electrode element CEE2. A channel layer, for example, the second channel layer CH2, may be disposed on the first insulating layer 114. The second source electrode SE2 and the second drain electrode DE2 may be disposed on the second channel layer CH2. The data line DL (for example, including the data lines DL1 and DL2) may be disposed on the first insulating layer 114. In an embodiment, the data line DL, the second source electrode SE2 and the second drain electrode DE2 may include the same conductive material, or may be formed simultaneously using the same process, such as a second metal layer. The second insulating layer 116 may be disposed on the first insulating layer 114, the data line DL, the second source electrode SE2, and the second drain electrode DE2. The pixel electrode may be disposed on the second insulating layer 116. For example, the first pixel electrode PE1 and the second pixel electrode PE2 of the first pixel P1, and the third pixel electrode PE3 and the fourth pixel electrode PE4 of the second pixel P2 are provided on the second insulating layer 116.

Referring to FIG. 3, the color filter substrate 106 includes a second substrate 118. The second substrate 118 includes but is not limited to a glass substrate. The black matrix layer BM and the color resist (the first color resist CF1 and the second color resist CF2) are provided on the second substrate 118. For example, the light-shielding stem BMK of the black matrix layer BM and the first black member BM1 are provided on the second substrate 118. The first black part BM1 may include an upper surface BM1TS1. The upper surface BM1TS1 is between the first side BM1S1 and the second side BM1S2. The upper surface BM1TS1 may be a flat surface. The first color resist CF1 is stacked on the first side BM1S1 and the upper surface BM1TS1 of the first black member BM1. The second color resist CF2 is stacked on the second side BM1S2 and the upper surface BM1TS1 of the first black member BM1. The first color resist CF1 and the second color resist CF2 stacked on the upper surface BM1TS1 of the first black member BM1 are not overlapped with each other, and are separated from each other by a pitch Q. The electrode layer 120 may be disposed on the black matrix layer BM and the color resist. The electrode layer 120 may be a transparent electrode layer (for example, indium tin oxide, etc.).

Please refer to FIG. 3, the active device array substrate 104 and the color filter substrate 106 are oppositely disposed, and the display medium LC is provided between the active device array substrate 104 and the color filter substrate 106. The display medium LC includes a liquid crystal layer. The spacer element PS may be disposed between the active device array substrate 104 and the color filter substrate 106 to separate the active device array substrate 104 and the color filter substrate 106. Here, the vertical projection direction D3 may be a direction perpendicular to the surface of the first substrate 112 or the second substrate 118.

Referring to FIG. 3, the first common electrode CE1 and the second common electrode CE2 overlap the first black member BM1 in the vertical projection direction D3. The first black member BM1 and the first common electrode CE1 may partially overlap the first pixel electrode PE1 in the vertical projection direction D3. The first black member BM1 and the second common electrode CE2 may partially overlap the third pixel electrode PE3 in the vertical projection direction D3. The first side BM1S1 of the first black part BM1 may be aligned with the side CE1S1 of the first common electrode CE1 away from the first line segment DLP1. The second side BM1S2 of the first black part BM1 may be aligned with the side CE2S2 of the second common electrode CE2 away from the first line segment DLP1. The light-shielding stem BMK can shield the thin film transistor, for example, including a first switching element T1 (Figure 1), a second switching element T2, and a third switching element T3 (Figure 1).

Referring to FIG. 3, the dimension BMW1 (eg width) of the first black part BM1 in the first direction D1 is larger than the dimension DLW1 (eg width) of the first line segment DLP1 in the first direction D1. In an embodiment, the dimension DLW1 (eg width) of the first line segment DLP1 in the first direction D1 and the dimension DLW2 (eg width) of the second line segment DLP2 in the first direction D1 may be substantially the same. That is, the dimension BMW1 (eg width) of the first black part BM1 in the first direction D1 is larger than the dimension DLW2 (eg width) of the second line segment DLP2 in the first direction D1.

Referring to FIGS. 3 and 4, the first black part BM1 overlaps the first line segment DLP1 of the data line DL1 in the vertical projection direction D3, and does not overlap the second line segment DLP2 of the data line DL1. The first side BM1S1 and the second side BM1S2 of the first black member BM1 are respectively outside the first side DLS1 and the second side DLS2 of the first line segment DLP1. In this embodiment, the second line segment DLP2 of the data line DL1 does not overlap the black matrix layer BM in the vertical projection direction D3. The overlapping area OV of the first color resist CF1 and the second color resist CF2 at least partially overlaps the second line segment DLP2 of the data line DL1 in the vertical projection direction D3.

In the pixel structure 102 of the embodiment, no black matrix layer is disposed between the second pixel electrode PE2 of the second sub-pixel SP2 and the fourth pixel electrode PE4 of the fourth sub-pixel SP4. In a comparative example, the black matrix layer (not shown) includes a black matrix portion disposed between the second pixel electrode PE2 of the second sub-pixel SP2 and the fourth pixel electrode PE4 of the fourth sub-pixel SP4, Moreover, the black matrix portion and the first black component BM1 have the same width, resulting in a large area of shielding range. Therefore, compared to the pixel structure of the comparative example, the pixel structure 102 of the embodiment of the present invention can have a higher aperture ratio.

Please refer to Figure 5 to Figure 7. FIG. 5 is a schematic diagram of a color filter substrate with a pixel structure according to another embodiment. Fig. 6 is a schematic diagram showing the arrangement of color resist, black matrix layer and data lines of the pixel structure. Figure 7 is a cross-sectional view of the pixel structure, which can be drawn along the CD line in Figures 5 and 6. The active device array substrate 104 of the pixel structure 202 may be similar to the active device array substrate 104 shown in FIG. 1. The pixel structure 202 is similar to the pixel structure 102 shown in FIG. 3, the difference is that the black matrix layer BM' of the color filter substrate 206 of the pixel structure 202 further includes a second black part BM2.

Referring to FIGS. 5 and 6, the light-shielding stem BMK can be connected between the second black member BM2 and the first black member BM1. The second black member BM2 may extend from the second side BMKS2 of the light-shielding stem BMK in the second direction D2. The second black member BM2 includes opposing first side BM2S1 and second side BM2S2.

Referring to FIG. 7, the second black component BM2 is provided on the second substrate 118. The second black part BM2 may include an upper surface BM2TS2. The upper surface BM2TS2 is between the first side BM2S1 and the second side BM2S2. The upper surface BM2TS2 may be a flat surface. The first color resist CF1 is stacked on the first side BM2S1 and the upper surface BM2TS2 of the second black member BM2. The second color resistive CF2 is stacked on the second side BM2S2 and the upper surface BM2TS2 of the second black member BM2. The first color resist CF1 and the second color resist CF2 are stacked on each other on the upper surface BM2TS2 of the second black member BM2 to form an overlap region OV. The second black member BM2 does not overlap the first common electrode CE1 and the second common electrode CE2 in the vertical projection direction D3. The dimension BMW1 (eg width) of the first black part BM1 in the first direction D1 is larger than the dimension BMW2 (eg width) of the second black part BM2 in the first direction D1. The dimension BMW2 (eg width) of the second black part BM2 in the first direction D1 is equal to or smaller than the dimension DLW2 (eg width) of the second line segment DLP2 in the first direction D1.

Please refer to FIG. 6 and FIG. 7, the second black component BM2 overlaps the second line segment DLP2 of the data line DL1 in the vertical projection direction D3, and the second black component BM2 and the first color resistive CF1 and the second color resistive CF2 The overlapping areas OV overlap. The second line segment DLP2 has opposing first side DLS3 and second side DLS4. In an embodiment, the first side DLS3 of the second line segment DLP2 is aligned with the first side BM2S1 of the second black part BM2. Alternatively, the first side DLS3 of the second line segment DLP2 is outside the first side BM2S1 of the second black component BM2, that is, the first side DLS3 of the second line segment DLP2 does not overlap the second black component in the vertical projection direction D3 BM2. The second side DLS4 of the second line segment DLP2 is aligned with the second side BM2S2 of the second black part BM2. Or, the second side DLS4 of the second line segment DLP2 is outside the second side BM2S2 of the second black component BM2, that is, the second side DLS4 of the second line segment DLP2 does not overlap the second black in the vertical projection direction D3 Component BM2. The overlapping area OV of the first color resist CF1 and the second color resist CF2 at least partially overlaps the second line segment DLP2 of the data line DL1 in the vertical projection direction D3. In this embodiment, the second black member BM2 partially overlaps the second pixel electrode PE2 of the second sub-pixel SP2 and the fourth pixel electrode PE4 of the fourth sub-pixel SP4 in the vertical projection direction D3.

In the pixel structure 202 of the embodiment, the black matrix layer BM' is disposed between the second pixel electrode PE2 of the second sub-pixel SP2 and the fourth pixel electrode PE4 of the fourth sub-pixel SP4. The width of the black member BM2 is narrower than that of the first black member BM1. In a comparative example, the black matrix layer (not shown) has a black matrix portion between two adjacent sub-pixels of equal width, resulting in a large-scale shielding range. Therefore, compared to the pixel structure of the comparative example, the pixel structure 202 of the embodiment of the present invention may have a higher aperture ratio, for example, the aperture ratio is increased by at least 5% or more.

Please refer to Figure 8. FIG. 8 is a cross-sectional view of the pixel structure 302. The pixel structure 302 may be similar to the pixel structure 202 shown in FIG. 7 except that the active element array substrate 304 of the pixel structure 302 includes a black material layer BL. The black material layer BL may be disposed on the first insulating layer 114 to cover the second switching element T2. The second insulating layer 116 may be disposed on the black material layer BL. In one embodiment, the concept of the black material layer BL can also be applied to the pixel structure 102 shown in FIG. 3, for example.

Please refer to Figure 9. FIG. 9 is a cross-sectional view of the pixel structure 402. The pixel structure 402 may be similar to the pixel structure 302 shown in FIG. 8, the difference is that the black material layer BL′ of the active element array substrate 404 of the pixel structure 402 includes the shading effect of the black material layer BL in FIG. 8 and the 8th The role of the spacer element PS in the figure. In one embodiment, the concept of the black material layer BL' can also be applied to the pixel structure shown in FIG. 3, for example.

Please refer to Figure 10. FIG. 10 is a cross-sectional view of the pixel structure 502. The pixel structure 502 may be similar to the pixel structure 202 shown in FIG. 7, the difference is that in the active element array substrate 504 of the pixel structure 502, the second black part BM2a of the black matrix layer BM'' is not in the vertical projection direction D3 It overlaps with the second pixel electrode PE2 of the second sub-pixel SP2 and the fourth pixel electrode PE4 of the fourth sub-pixel SP4. More specifically, the second black part BM2a and/or the second line segment DLP2 of the data line DL1 do not overlap the second pixel electrode PE2 and the fourth pixel electrode PE4 in the vertical projection direction D3. This concept can also be applied to the pixel structure similar to FIG. 7, FIG. 8, and FIG. 9, for example.

Please refer to Figure 11. Fig. 11 shows a cross-sectional view of the color filter substrate near the first black member BM1' in an embodiment. The first side BM1S1 and the second side BM1S2 of the first black part BM1' may be inclined side walls, and the first black part BM1' has a trapezoidal shape gradually narrowing away from the second substrate 118. The opposite edges of the first black part BM1' may be the edges of the first side BM1S1 and the second side BM1S2 adjacent to the second substrate 118, respectively. In an embodiment, the arrangement relationship of the opposite edges of the first black part BM1' to other elements may be similar to the first side BM1S1 of the first black part BM1 described in FIGS. 3, 7 and 10, and The arrangement relationship of the second side BM1S2 to other components.

Please refer to Figure 12. FIG. 12 shows a cross-sectional view of the color filter substrate in the vicinity of the second black member BM2′ in an embodiment. The first side BM2S1 and the second side BM2S2 of the second black part BM2' may be inclined side walls, and the second black part BM2' has a trapezoidal shape gradually narrowing away from the second substrate 118. The opposite edges of the second black part BM2' may be that the first side BM2S1 and the second side BM2S2 are adjacent to the second substrate 118, respectively. In an embodiment, the arrangement relationship of the opposite edges of the second black part BM2' for other elements may be similar to the first side BM2S1 and the second side BM2S2 of the second black part BM2 as described in FIG. 7 for other elements Configuration relationship. For example, when the second black part BM2' is substituted for the second black part BM2, the two opposite edges of the second black part BM2' are substantially aligned with the first side DLS3 and the second side DLS4 of the second line segment DLP2, respectively.

In summary, in the pixel structure of the embodiment of the present invention, no black matrix layer is arranged between the second pixel electrode of the second sub-pixel and the fourth pixel electrode of the fourth sub-pixel; or, The black matrix layer has a second black member disposed between the second pixel electrode of the second sub-pixel and a fourth pixel electrode of the fourth sub-pixel, and the width ratio of the second black member is disposed on the first sub-pixel The first black member between the first pixel electrode of the pixel and the third pixel electrode of the third sub-pixel is narrow. Therefore, the pixel structure of the embodiment of the present invention may have a higher aperture ratio.

In summary, although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be deemed as defined by the scope of the attached patent application.

102, 202, 302, 402, 502: pixel structure 104, 304, 404, 504: active element array substrate 106, 206: color filter substrate CL1, CL2: signal line 112: first substrate 114: first insulating layer 116: Second insulating layer 118: Second substrate 120: Electrode layers BL, BL': Black material layers BM, BM', BM'': Black matrix layers BM1, BM1': First black parts BM2, BM2', BM2a : Second black part BMK: Shading stem BM1TS1, BM2TS2: Upper surface BMW1, BMW2: Size CE1: First common electrode CE2: Second common electrode CEE1: First common electrode element CEE2: Second common electrode element CE1S1, CE2S2: Side CES: Common electrode line CF1: First color resistive CF2: Second color resistive CF3: Third color resistive CF4: Fourth color resistive CH1: First channel layer CH2: Second channel layer CH3: Third channel layer D1 : First direction D2: Second direction D3: Vertical projection direction DE1: First drain electrode DE2: Second drain electrode DE3: Third drain electrode DL, DL1, DL2: Data line DLP1: First line segment DLP2: Second Line segments DLS1, DLS3, BM1S1, BM2S1, BMKS1: first side DLS2, DLS4, BM1S2, BM2S2, BMKS2: second side BM1S3: third side BMW1, BMW2, DLW1, DLW2: size LC: display medium G1: First gate G2: Second gate G3: Third gate P1: First pixel P2: Second pixel P3: Third pixel P4: Fourth pixel OV: Overlapping area Q: Pitch PE1: First pixel electrode PE2: Second pixel electrode PE3: Third pixel electrode PE4: Fourth pixel electrode PS: Spacer element SE1: First source electrode SE2: Second source electrode SE3: Third source electrode SL: Scanning lines SP1, SP1': first sub-pixel SP2, SP2': second sub-pixel SP3, SP3': third sub-pixel SP4, SP4': fourth sub-pixel T1: first switching element T2: Second switching element T3: third switching element T4: fourth switching element T5: fifth switching element T6: sixth switching element V1, V2, V3, V4: contact window

FIG. 1 is a schematic diagram of a pixel structure active device array substrate according to an embodiment of the invention. FIG. 2 is a schematic diagram of a color filter substrate with a pixel structure according to an embodiment of the invention. FIG. 3 is a cross-sectional view of a pixel structure according to an embodiment of the invention. FIG. 4 is a schematic diagram of color resist, black matrix layer and data lines of a pixel structure according to an embodiment of the invention. FIG. 5 is a schematic diagram of a color filter substrate with a pixel structure according to another embodiment of the invention. FIG. 6 is a schematic diagram showing the arrangement of the color resist, the black matrix layer and the data line of the pixel structure according to another embodiment of the invention. FIG. 7 is a cross-sectional view of a pixel structure according to another embodiment of the invention. FIG. 8 is a cross-sectional view of a pixel structure according to yet another embodiment of the invention. FIG. 9 is a cross-sectional view of a pixel structure according to yet another embodiment of the invention. FIG. 10 is a cross-sectional view of a pixel structure according to yet another embodiment of the invention. FIG. 11 shows a cross-sectional view of the color filter substrate in the vicinity of the first black member in an embodiment. FIG. 12 shows a cross-sectional view of the color filter substrate in the vicinity of the second black member in an embodiment.

BM: Black matrix layer

BM1: the first black part

BM1S1: the first side

BM1S2: second side

BMK: shading officer

BMKS1: the first side

BMKS2: second side

CF1: first color resistance

CF2: second color resistance

CF3: third color resistance

CF4: fourth color resist

D1: First direction

D2: Second direction

D3: Vertical projection direction

DL1, DL2: data cable

DLP1: the first line segment

DLP2: Second line segment

DLS1: first side

DLS2: second side

BM1S3: second side

P1: the first pixel

P2: second pixel

P3: third pixel

P4: fourth pixel

OV: overlapping area

Claims (11)

A pixel structure, including: a first pixel, including a first color resist; a second pixel, including a second color resist, the first color resist and the second color resist are arranged on a first side Upward; a data line, including a first line segment and a second line segment extending in a second direction, the first direction and the second direction are interlaced with each other; and a black matrix layer, including a first black component , Wherein the first black component overlaps with the first line segment and does not overlap with the second line segment; wherein the first color resist and the second color resist are stacked on each other to form an overlapping region, the overlapping region overlaps On the second line segment, the first color resist and the second color resist provided on the first black component do not overlap each other. The pixel structure as described in item 1 of the patent application scope, wherein the first black component has a first side and a second side opposite to each other, the first color resist is stacked on the first side, and The second color resist is stacked on the second side. The pixel structure as described in item 1 of the patent application scope, wherein the size of the first black component in the first direction is larger than the size of the second line segment in the first direction. The pixel structure as described in item 1 of the patent application scope, wherein the second line segment does not overlap with the black matrix layer. The pixel structure as described in item 1 of the patent application, wherein the black matrix layer further includes a second black component, the second black component overlaps the second line segment, and the second black component overlaps the overlapping area overlapping. The pixel structure as described in item 5 of the patent application scope, wherein the size of the first black component in the first direction is larger than the size of the second black component in the first direction. The pixel structure as described in item 5 of the patent application scope, wherein the size of the second black component in the first direction is equal to or smaller than the size of the second line segment in the first direction. The pixel structure as described in item 1 of the patent application scope further includes a first substrate and a second substrate disposed oppositely, wherein the data line is disposed on the first substrate, and the black matrix layer, the first The color resist and the second color resist are disposed on the second substrate. The pixel structure as described in item 1 of the patent application, wherein the first pixel includes a first sub-pixel and a second sub-pixel arranged in the second direction, and a first common electrode, The first common electrode overlaps the first black part. The pixel structure as described in item 9 of the patent application scope, wherein the second pixel includes a third sub-pixel and a fourth sub-pixel arranged in the second direction, and a second common electrode, The second common electrode overlaps the first black part. The pixel structure as described in item 1 of the patent application scope, wherein the dimensions of the first line segment and the second line segment in the first direction are substantially the same.

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