TWI518382B - Pixel structure and display panel having the same - Google Patents
Pixel structure and display panel having the same Download PDFInfo
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Description
本發明是有關於一種畫素結構及具有此畫素結構的顯示面板,且特別是有關於一種提高顯示品質與顯示效率的畫素結構及具有此畫素結構的顯示面板。 The present invention relates to a pixel structure and a display panel having the pixel structure, and more particularly to a pixel structure for improving display quality and display efficiency and a display panel having the pixel structure.
隨著科技的進步,體積龐大的陰極射線管(Cathode Ray Tube,CRT)顯示器已經漸漸地走入歷史。因此,液晶顯示器(Liquid Crystal Display,LCD)、有機發光二極體顯示器(Organic Light Emitting Diode display,OLED display)、電泳顯示器(Electro-Phoretic Display,EPD)、電漿顯示器(Plasma Display Panel,PDP)等顯示面板則逐漸地成為未來顯示器之主流。 With the advancement of technology, the huge cathode ray tube (CRT) display has gradually entered history. Therefore, a liquid crystal display (LCD), an organic light emitting diode display (OLED display), an electrophoretic display (EPD), a plasma display panel (PDP) Display panels are gradually becoming the mainstream of future displays.
近年來,更提出了將彩色濾光層直接整合於薄膜電晶體陣列基板上(Color Filter on Array,COA)或是將黑矩陣製作於薄膜電晶體陣列基板上(Black matrix on Array,BOA)的技術,係將COA基板或BOA基板與另一對向基板組立,並於兩基板間填入顯示介質,以形成顯示面板。由於彩色濾光層是僅直接形成於薄膜電晶 體陣列基板上,因此不會產生對位誤差(misalignment)。而且,此種顯示面板可具有較佳的解析度且其畫素的開口率(aperture ratio)亦較高。然而,由於彩色濾光層具有傾斜邊緣(taper)的開口會使顯示介質錯向排列,因此導致此種顯示面板在彩色濾光層的開口的邊緣處容易發生色偏(color washout)現象以及產生暗線(disclination line)的問題,進而影響顯示品質。 In recent years, it has been proposed to directly integrate a color filter layer on a thin film transistor array substrate (COA) or a black matrix on a thin film transistor array substrate (Black matrix on Array, BOA). In the technique, a COA substrate or a BOA substrate is assembled with another opposite substrate, and a display medium is filled between the two substrates to form a display panel. Since the color filter layer is formed directly on the thin film electro-crystal On the bulk array substrate, therefore, misalignment does not occur. Moreover, such a display panel can have a better resolution and an aperture ratio of its pixels is also higher. However, since the color filter layer has a taper opening, the display medium is misaligned, thereby causing such a display panel to easily cause a color washout phenomenon at the edge of the opening of the color filter layer and generating The problem of the disclination line, which in turn affects the display quality.
本發明提供一種畫素結構及具有此畫素結構的顯示面板,此畫素結構可用以提高顯示面板的顯示品質與顯示效率。 The invention provides a pixel structure and a display panel having the pixel structure, and the pixel structure can be used to improve display quality and display efficiency of the display panel.
本發明提出一種畫素結構,其包括第一掃描線、第二掃描線、資料線、第一主動元件、第二主動元件、分享開關元件、保護層、彩色濾光圖案、第一畫素電極、第二畫素電極、分享電容器以及遮光材料。第一主動元件與第一掃描線以及資料線電性連接。第二主動元件與第一掃描線以及資料線電性連接。分享開關元件與第二掃描線以及第二主動元件電性連接。保護層覆蓋第一主動元件、第二主動元件以及分享開關元件。彩色濾光圖案位於保護層上,且彩色濾光圖案具有開口。第一畫素電極位於彩色濾光圖案上且與第一主動元件電性連接。第二畫素電極位於彩色濾光圖案上且與第二主動元件電性連接。分享電容器與分享開關元件電性連接,其中分享電容器包括電極線、絕緣層以及電極圖案。絕緣層覆蓋電極線。電極圖案位於絕緣層上,以與電極線產 生第一電容耦合效應。保護層覆蓋電極圖案,彩色濾光圖案之開口暴露出電極圖案上方之保護層,且第一畫素電極延伸至開口處以與電極圖案產生第二電容耦合效應。遮光材料填入開口內以覆蓋延伸至開口內之第一畫素電極。 The present invention provides a pixel structure including a first scan line, a second scan line, a data line, a first active device, a second active device, a shared switching device, a protective layer, a color filter pattern, and a first pixel electrode. , second pixel electrode, sharing capacitor and shading material. The first active component is electrically connected to the first scan line and the data line. The second active component is electrically connected to the first scan line and the data line. The sharing switching element is electrically connected to the second scan line and the second active element. The protective layer covers the first active component, the second active component, and the shared switching component. The color filter pattern is on the protective layer, and the color filter pattern has an opening. The first pixel electrode is located on the color filter pattern and is electrically connected to the first active device. The second pixel electrode is located on the color filter pattern and is electrically connected to the second active device. The sharing capacitor is electrically connected to the sharing switching element, wherein the sharing capacitor comprises an electrode line, an insulating layer and an electrode pattern. The insulating layer covers the electrode lines. The electrode pattern is located on the insulating layer to be produced with the electrode line The first capacitive coupling effect. The protective layer covers the electrode pattern, the opening of the color filter pattern exposing the protective layer over the electrode pattern, and the first pixel electrode extends to the opening to create a second capacitive coupling effect with the electrode pattern. A light blocking material is filled into the opening to cover the first pixel electrode that extends into the opening.
本發明另提出一種顯示面板,其包括畫素陣列基板、對向基板以及顯示介質。畫素陣列基板包括多個畫素結構,其中每一畫素結構如上述之畫素結構。對向基板位於畫素陣列基板的對向側。顯示介質位於畫素陣列基板與對向基板之間。 The present invention further provides a display panel including a pixel array substrate, a counter substrate, and a display medium. The pixel array substrate includes a plurality of pixel structures, wherein each pixel structure is a pixel structure as described above. The opposite substrate is located on the opposite side of the pixel array substrate. The display medium is located between the pixel array substrate and the opposite substrate.
基於上述,在本發明的畫素結構及具有此畫素結構的顯示面板中,保護層覆蓋電極圖案,彩色濾光圖案之開口暴露出電極圖案上方之保護層,且第一畫素電極延伸至開口處以與電極圖案產生第二電容耦合效應。由於本發明的畫素結構之分享電容器具有第一電容耦合效應以及第二電容耦合效應,因此可使分享電容器之電容效應提高,進而提高顯示效率。再者,在本發明中,由於遮光材料填入彩色濾光圖案之開口內,因此可改善在彩色濾光圖案的開口的邊緣處發生色偏現象以及產生暗線的問題,進而提高顯示面板的顯示品質。 Based on the above, in the pixel structure of the present invention and the display panel having the pixel structure, the protective layer covers the electrode pattern, and the opening of the color filter pattern exposes the protective layer above the electrode pattern, and the first pixel electrode extends to The opening creates a second capacitive coupling effect with the electrode pattern. Since the sharing capacitor of the pixel structure of the present invention has the first capacitive coupling effect and the second capacitive coupling effect, the capacitance effect of the sharing capacitor can be improved, thereby improving display efficiency. Furthermore, in the present invention, since the light-shielding material is filled in the opening of the color filter pattern, the problem of occurrence of color shift and dark lines at the edge of the opening of the color filter pattern can be improved, thereby improving the display of the display panel. quality.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
10‧‧‧畫素陣列基板 10‧‧‧ pixel array substrate
20‧‧‧對向基板 20‧‧‧ opposite substrate
30‧‧‧顯示介質 30‧‧‧Display media
40‧‧‧框膠 40‧‧‧Box glue
50‧‧‧顯示面板 50‧‧‧ display panel
100、200‧‧‧基板 100, 200‧‧‧ substrate
110‧‧‧畫素陣列 110‧‧‧ pixel array
120‧‧‧間隙物 120‧‧‧Intervals
130、180、190‧‧‧畫素結構 130, 180, 190‧‧ ‧ pixel structure
132‧‧‧第一圖案層 132‧‧‧First pattern layer
134‧‧‧第二圖案層 134‧‧‧Second pattern layer
136‧‧‧第三圖案層 136‧‧‧ third pattern layer
138、188、198‧‧‧第四圖案層 138, 188, 198‧‧‧ fourth pattern layer
140‧‧‧遮光材料 140‧‧‧ shading materials
142‧‧‧遮光圖案 142‧‧‧ shading pattern
150‧‧‧保護層 150‧‧‧protection layer
150a‧‧‧接觸窗 150a‧‧‧Contact window
160‧‧‧彩色濾光圖案 160‧‧‧Color filter pattern
160a‧‧‧開口 160a‧‧‧ openings
170‧‧‧電極線 170‧‧‧Electrode lines
172‧‧‧絕緣層 172‧‧‧Insulation
174‧‧‧電極圖案 174‧‧‧electrode pattern
210‧‧‧電極層 210‧‧‧electrode layer
CCS‧‧‧分享電容器 C CS ‧‧‧Share capacitor
CCS1、CCS2‧‧‧電容耦合效應 C CS 1, C CS 2‧‧‧ Capacitive coupling effect
CL‧‧‧共用線 CL‧‧‧Shared line
DLn、DLn+1‧‧‧資料線 DL n , DL n+1 ‧‧‧ data line
H1、H2‧‧‧高度 H1, H2‧‧‧ height
I-I’、II-II’‧‧‧線 I-I’, II-II’‧‧‧ line
PE1、PE2‧‧‧畫素電極 PE1, PE2‧‧‧ pixel electrodes
SLn、SLn+1‧‧‧掃描線 SL n , SL n+1 ‧‧‧ scan line
T1、T2‧‧‧主動元件 T1, T2‧‧‧ active components
T3‧‧‧分享開關元件 T3‧‧‧Shared switching elements
圖1為依照本發明的一實施例的一種顯示面板的剖面示意圖。 1 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention.
圖2為依照本發明的第一實施例的一種畫素結構的上視示意圖。 2 is a top plan view of a pixel structure in accordance with a first embodiment of the present invention.
圖3為圖2中沿線I-I’及線II-II’的剖面示意圖。 Figure 3 is a cross-sectional view taken along line I-I' and line II-II' of Figure 2;
圖4為圖2之畫素結構的等效電路圖。 4 is an equivalent circuit diagram of the pixel structure of FIG. 2.
圖5A至圖5D分別為圖2之畫素結構的第一圖案層、第二圖案層、第三圖案層以及第四圖案層的上視示意圖。 5A to 5D are top plan views of the first pattern layer, the second pattern layer, the third pattern layer, and the fourth pattern layer of the pixel structure of FIG. 2, respectively.
圖6為依照本發明的第二實施例的一種畫素結構的上視示意圖。 Figure 6 is a top plan view of a pixel structure in accordance with a second embodiment of the present invention.
圖7A為圖6之畫素結構的第四圖案層。 FIG. 7A is a fourth pattern layer of the pixel structure of FIG. 6. FIG.
圖7B為圖6之畫素結構的遮光圖案。 FIG. 7B is a light shielding pattern of the pixel structure of FIG. 6. FIG.
圖8為依照本發明的第三實施例的一種畫素結構的上視示意圖。 Figure 8 is a top plan view of a pixel structure in accordance with a third embodiment of the present invention.
圖9A為圖8之畫素結構的第四圖案層。 Figure 9A is a fourth pattern layer of the pixel structure of Figure 8.
圖9B為圖8之畫素結構的遮光圖案。 FIG. 9B is a light blocking pattern of the pixel structure of FIG. 8. FIG.
圖1為依照本發明的一實施例的一種顯示面板50的剖面示意圖。請參照圖1,顯示面板50包括畫素陣列基板10、對向基 板20、顯示介質30以及框膠40。顯示面板50例如是液晶顯示面板或是其他形式之顯示面板。 1 is a cross-sectional view of a display panel 50 in accordance with an embodiment of the present invention. Referring to FIG. 1 , the display panel 50 includes a pixel array substrate 10 and a counter base. The board 20, the display medium 30, and the sealant 40. The display panel 50 is, for example, a liquid crystal display panel or other form of display panel.
畫素陣列基板10包括基板100、畫素陣列110以及多個間隙物(spacers)120。基板100之材質可為玻璃、石英、有機聚合物或是金屬等等。畫素陣列110配置在基板100上,且畫素陣列110包括多個畫素結構。間隙物120(高度為H1)配置在畫素陣列110上,且間隙物120與對向基板20接觸。關於畫素結構以及間隙物120之設計將於後文中詳細地描述。 The pixel array substrate 10 includes a substrate 100, a pixel array 110, and a plurality of spacers 120. The material of the substrate 100 may be glass, quartz, organic polymer or metal or the like. The pixel array 110 is disposed on the substrate 100, and the pixel array 110 includes a plurality of pixel structures. The spacers 120 (having a height H1) are disposed on the pixel array 110, and the spacers 120 are in contact with the opposite substrate 20. The design of the pixel structure and the spacers 120 will be described in detail later.
對向基板20位於畫素陣列基板10的對向側。對向基板20包括基板200以及電極層210。基板200之材質可為玻璃、石英或有機聚合物等等。電極層210是全面地覆蓋於基板200上。電極層210為透明導電層,其材質包括金屬氧化物,例如是銦錫氧化物或者是銦鋅氧化物。 The opposite substrate 20 is located on the opposite side of the pixel array substrate 10. The opposite substrate 20 includes a substrate 200 and an electrode layer 210. The material of the substrate 200 may be glass, quartz or an organic polymer or the like. The electrode layer 210 is entirely covered on the substrate 200. The electrode layer 210 is a transparent conductive layer, and the material thereof includes a metal oxide such as indium tin oxide or indium zinc oxide.
顯示介質30位於畫素陣列基板10與對向基板20之間。當顯示面板50為液晶顯示面板時,顯示介質30例如是液晶分子。 The display medium 30 is located between the pixel array substrate 10 and the opposite substrate 20. When the display panel 50 is a liquid crystal display panel, the display medium 30 is, for example, liquid crystal molecules.
框膠40位於畫素陣列基板10與對向基板20之間,且圍繞顯示介質30。框膠40例如是包括密封膠材或是密封膠材與分布於密封膠材內的多個間隙球(未繪示)。 The sealant 40 is located between the pixel array substrate 10 and the opposite substrate 20 and surrounds the display medium 30. The sealant 40 is, for example, a sealant or a sealant and a plurality of gap balls (not shown) distributed in the sealant.
圖2為依照本發明的第一實施例的一種畫素結構130的上視示意圖(為了清楚起見,省略彩色濾光圖案160未繪示),圖3為圖2中沿線I-I’及線II-II’的剖面示意圖,圖4為圖2之畫素結構130的等效電路圖,而圖5A至圖5D分別為圖2之畫素結構130 的第一圖案層132、第二圖案層134、第三圖案層136以及第四圖案層138的上視示意圖。為了清楚地說明本發明之實施例,圖2僅繪示出圖1之畫素陣列110的其中一個畫素結構,此領域技術人員應可以理解,圖1之畫素陣列110實際上即是由多個圖2所示之畫素結構組成陣列形式所構成。 2 is a top plan view of a pixel structure 130 according to a first embodiment of the present invention (the color filter pattern 160 is omitted for clarity), and FIG. 3 is along line I-I' of FIG. FIG. 4 is an equivalent circuit diagram of the pixel structure 130 of FIG. 2, and FIGS. 5A to 5D are pixel structure 130 of FIG. 2, respectively. A top view of the first pattern layer 132, the second pattern layer 134, the third pattern layer 136, and the fourth pattern layer 138. In order to clearly illustrate an embodiment of the present invention, FIG. 2 only depicts one of the pixel structures of the pixel array 110 of FIG. 1. Those skilled in the art will appreciate that the pixel array 110 of FIG. 1 is actually A plurality of pixel structures shown in FIG. 2 are formed in an array form.
請同時參照圖2、圖3及圖4,畫素結構130包括掃描線SLn~SLn+1(包括第一掃描線SLn與第二掃描線SLn+1)、資料線DLn~DLn+1、主動元件T1~T2(包括第一主動元件T1與第二主動元件T2)、分享開關元件T3、絕緣層172、保護層150、彩色濾光圖案160、第一畫素電極PE1、第二畫素電極PE2、共用線CL、分享電容器CCS以及遮光材料140。再者,圖2之畫素結構130可由圖5A至圖5D的第一圖案層132、第二圖案層134、第三圖案層136以及第四圖案層138所構成,而這些圖案層將於後文中進一步說明。 Referring to FIG. 2, FIG. 3 and FIG. 4 simultaneously, the pixel structure 130 includes scan lines SL n ~SL n+1 (including the first scan line SL n and the second scan line SL n+1 ) and the data line DL n ~ DL n+1 , active elements T1 T T2 (including first active element T1 and second active element T2 ), sharing switching element T3 , insulating layer 172 , protective layer 150 , color filter pattern 160 , first pixel electrode PE1 The second pixel electrode PE2, the common line CL, the sharing capacitor C CS, and the light shielding material 140. Furthermore, the pixel structure 130 of FIG. 2 may be composed of the first pattern layer 132, the second pattern layer 134, the third pattern layer 136, and the fourth pattern layer 138 of FIGS. 5A to 5D, and these pattern layers will be Further explanation in the text.
掃描線SLn~SLn+1與資料線DLn~DLn+1的延伸方向不相同,較佳的是掃描線SLn~SLn+1的延伸方向與資料線DLn~DLn+1的延伸方向垂直。此外,掃描線SLn~SLn+1與資料線DLn~DLn+1是位於不相同的膜層,且兩者之間夾有絕緣層(未繪示)。掃描線SLn~SLn+1與資料線DLn~DLn+1主要用來傳遞驅動此畫素結構130的驅動訊號。掃描線SLn~SLn+1與資料線DLn~DLn+1一般是使用金屬材料。然而,本發明不限於此。根據其他實施例,掃描線SLn~SLn+1與資料線DLn~DLn+1也可以使用其他導電材料例如是包 括合金、金屬材料的氧化物、金屬材料的氮化物、金屬材料的氮氧化物或是金屬材料與其它導電材料的堆疊層。 The scanning lines SL n to SL n+1 are different from the extending direction of the data lines DL n to DL n+1 , and preferably the extending directions of the scanning lines SL n to SL n+1 and the data lines DL n to DL n+ The extension direction of 1 is vertical. In addition, the scan lines SL n to SL n+1 and the data lines DL n to DL n+1 are different film layers with an insulating layer (not shown) interposed therebetween. The scan lines SL n ~SL n+1 and the data lines DL n ~DL n+1 are mainly used to transmit the driving signals for driving the pixel structure 130. The scan lines SL n to SL n+1 and the data lines DL n to DL n+1 are generally made of a metal material. However, the invention is not limited thereto. According to other embodiments, the scan lines SL n to SL n+1 and the data lines DL n to DL n+1 may also use other conductive materials such as oxides including alloys, metal materials, nitrides of metal materials, and metal materials. Nitrogen oxide is a stacked layer of metal material and other conductive materials.
主動元件T1~T2與第一掃描線SLn以及資料線DLn電性連接。在此,主動元件T1~T2例如是薄膜電晶體,其包括閘極、通道層、汲極以及源極。閘極與第一掃描線SLn電性連接,源極與資料線DLn電性連接。換言之,當有控制訊號輸入第一掃描線SLn時,第一掃描線SLn與閘極之間會電性導通;當有控制訊號輸入資料線DLn時,資料線DLn會與源極電性導通。通道層位於閘極之上方並且位於源極與汲極的下方。本實施例之主動元件T1~T2是以底部閘極型薄膜電晶體為例來說明,但本發明不限於此。在其他實施例中,主動元件T1~T2也可以是頂部閘極型薄膜電晶體。再者,分享開關元件T3與第二掃描線SLn+1以及第二主動元件T2電性連接。分享開關元件T3例如是薄膜電晶體。 The active elements T1 T T2 are electrically connected to the first scan line SL n and the data line DL n . Here, the active elements T1 to T2 are, for example, thin film transistors including a gate, a channel layer, a drain, and a source. The gate is electrically connected to the first scan line SL n , and the source is electrically connected to the data line DL n . In other words, when a control signal is input to the first scan line SL n , the first scan line SL n and the gate are electrically connected; when there is a control signal input data line DL n , the data line DL n and the source are Electrically conductive. The channel layer is above the gate and below the source and drain. The active devices T1 to T2 of the present embodiment are described by taking a bottom gate type thin film transistor as an example, but the present invention is not limited thereto. In other embodiments, the active devices T1 T T2 may also be top gate type thin film transistors. Furthermore, the sharing switching element T3 is electrically connected to the second scan line SL n+1 and the second active element T2. The sharing switching element T3 is, for example, a thin film transistor.
在主動元件T1~T2的閘極上更覆蓋有絕緣層172,其又可稱為閘極絕緣層。另外,在第一主動元件T1、第二主動元件T2以及分享開關元件T3上可更覆蓋有另一絕緣層,其又可稱為保護層150。絕緣層172與保護層150的材料例如是包括無機材料、有機材料或上述之組合。無機材料例如是包括氧化矽、氮化矽、氮氧化矽或上述至少二種材料的堆疊層。 The gates of the active devices T1 to T2 are further covered with an insulating layer 172, which may also be referred to as a gate insulating layer. In addition, another insulating layer may be further covered on the first active device T1, the second active device T2, and the sharing switching element T3, which may also be referred to as a protective layer 150. The material of the insulating layer 172 and the protective layer 150 is, for example, an inorganic material, an organic material, or a combination thereof. The inorganic material is, for example, a stacked layer including cerium oxide, cerium nitride, cerium oxynitride or at least two of the above materials.
更詳細來說,畫素陣列110之畫素結構依序包括如圖5A所示之第一圖案層132、如圖5B所示之第二圖案層134、如圖5C所示之第三圖案層136以及如圖5D所示之第四圖案層138堆疊所 構成。各圖案層之詳細說明如下。 In more detail, the pixel structure of the pixel array 110 sequentially includes a first pattern layer 132 as shown in FIG. 5A, a second pattern layer 134 as shown in FIG. 5B, and a third pattern layer as shown in FIG. 5C. 136 and a fourth pattern layer 138 stack as shown in FIG. 5D Composition. A detailed description of each pattern layer is as follows.
請同時參照圖2以及圖5A,畫素結構130的第一圖案層132包括掃描線SLn~SLn+1、資料線DLn~DLn+1、共用線CL、主動元件T1~T2以及分享開關元件T3。掃描線SLn~SLn+1與資料線DLn~DLn+1屬於不同的膜層,而共用線CL例如是與掃描線SLn~SLn+1屬於同一膜層。主動元件T1~T2以及分享開關元件T3則分別與對應的掃描線SLn~SLn+1、資料線DLn~DLn+1以及共用線CL電性連接。另外,畫素結構130的第一圖案層132還包括電極線170以及電極圖案174。電極線170與共用線CL連接,電極線170例如是與掃描線SLn~SLn+1、共用線CL及主動元件T1~T2的閘極屬於同一膜層。電極圖案174例如是與資料線DLn~DLn+1屬於同一膜層。 Referring to FIG. 2 and FIG. 5A simultaneously, the first pattern layer 132 of the pixel structure 130 includes scan lines SL n ~SL n+1 , data lines DL n ~DL n+1 , common lines CL, active elements T1~T2, and The switching element T3 is shared. The scan lines SL n to SL n+1 and the data lines DL n to DL n+1 belong to different film layers, and the common line CL is, for example, the same film layer as the scan lines SL n to SL n+1 . The active elements T1 to T2 and the shared switching element T3 are electrically connected to the corresponding scan lines SL n to SL n+1 , the data lines DL n to DL n+1 , and the common line CL, respectively. In addition, the first pattern layer 132 of the pixel structure 130 further includes an electrode line 170 and an electrode pattern 174. 170 connected to the common electrode line line CL, the line electrode 170, for example, the scan line SL n ~ SL n + 1, the common line CL and the gate of the active element T1 ~ T2 belong to the same electrode layer. The electrode pattern 174 is, for example, the same film layer as the data lines DL n to DL n+1 .
請同時參照圖2以及圖5B,畫素結構130的第二圖案層134包括彩色濾光圖案160,彩色濾光圖案160具有開口160a。彩色濾光圖案160位於保護層150上,且彩色濾光圖案160具有傾斜邊緣的開口160a。彩色濾光圖案160例如是包括紅、綠、藍色濾光圖案。 Referring to FIG. 2 and FIG. 5B simultaneously, the second pattern layer 134 of the pixel structure 130 includes a color filter pattern 160 having an opening 160a. The color filter pattern 160 is located on the protective layer 150, and the color filter pattern 160 has an opening 160a with a slanted edge. The color filter pattern 160 includes, for example, red, green, and blue filter patterns.
請同時參照圖2以及圖5C,畫素結構130的第三圖案層136包括第一畫素電極PE1與第二畫素電極PE2。第一畫素電極PE1位於彩色濾光圖案160上。部分第一畫素電極PE1延伸至開口160a處,且經由接觸窗150a與第一主動元件T1電性連接。第二畫素電極PE2位於彩色濾光圖案160上且與第二主動元件T2 電性連接。第一畫素電極PE1與第二畫素電極PE2可進一步包括各種形狀的配向狹縫(未繪示)。 Referring to FIG. 2 and FIG. 5C simultaneously, the third pattern layer 136 of the pixel structure 130 includes a first pixel electrode PE1 and a second pixel electrode PE2. The first pixel electrode PE1 is located on the color filter pattern 160. A portion of the first pixel electrode PE1 extends to the opening 160a and is electrically connected to the first active device T1 via the contact window 150a. The second pixel electrode PE2 is located on the color filter pattern 160 and is coupled to the second active device T2. Electrical connection. The first pixel electrode PE1 and the second pixel electrode PE2 may further include alignment slits (not shown) of various shapes.
承上所述,如圖2所示,共用線CL位於第一畫素電極PE1與第二畫素電極PE2下方,因此共用線CL分別與第一畫素電極PE1以及第二畫素電極PE2形成金屬層/絕緣層/銦錫氧化物(Metal/Insulator/ITO,MII)型態的儲存電容。 As described above, as shown in FIG. 2, the common line CL is located below the first pixel electrode PE1 and the second pixel electrode PE2, and thus the common line CL is formed with the first pixel electrode PE1 and the second pixel electrode PE2, respectively. Metal/Insulator/Indium Tin Oxide (Metal/Insulator/ITO, MII) type storage capacitor.
此外,分享電容器CCS與分享開關元件T3電性連接。分享電容器CCS是由電極線170、絕緣層172以及電極圖案174構成。絕緣層172覆蓋電極線170。電極圖案174位於絕緣層172上,以與電極線170產生金屬層/絕緣層/金屬層(Metal/Insulator/Metal,MIM)型態的第一電容耦合效應CCS1。保護層150覆蓋電極圖案174,彩色濾光圖案160之開口160a暴露出電極圖案174上方之保護層150,且部分第一畫素電極PE1延伸至開口處160a以與電極圖案174產生金屬層/絕緣層/銦錫氧化物(Metal/Insulator/ITO,MII)型態的第二電容耦合效應CCS2,如圖2以及圖3所示。由於本發明的畫素結構130之分享電容器CCS具有第一電容耦合效應CCS1以及第二電容耦合效應CCS2,因此可使分享電容器CCS之電容效應提高。 In addition, the sharing capacitor C CS is electrically connected to the sharing switching element T3. The sharing capacitor C CS is composed of an electrode line 170, an insulating layer 172, and an electrode pattern 174. The insulating layer 172 covers the electrode lines 170. The electrode pattern 174 is located on the insulating layer 172 to generate a first capacitive coupling effect C CS 1 of the metal layer/insulator/metal (MIM) type with the electrode line 170. The protective layer 150 covers the electrode pattern 174. The opening 160a of the color filter pattern 160 exposes the protective layer 150 above the electrode pattern 174, and a portion of the first pixel electrode PE1 extends to the opening 160a to generate a metal layer/insulation with the electrode pattern 174. The second capacitive coupling effect C CS 2 of the layer/indium tin oxide (Metal/Insulator/ITO, MII) type is shown in FIGS. 2 and 3. Since the sharing capacitor C CS of the pixel structure 130 of the present invention has the first capacitive coupling effect C CS 1 and the second capacitive coupling effect C CS 2, the capacitive effect of the sharing capacitor C CS can be improved.
再者,請同時參照圖2以及圖5D,畫素結構130的第四圖案層138是由遮光材料140與間隙物120所構成。遮光材料140覆蓋第一掃描線SLn、第二掃描線SLn+1以及資料線DLn~DLn+1。 Furthermore, referring to FIG. 2 and FIG. 5D simultaneously, the fourth pattern layer 138 of the pixel structure 130 is composed of the light shielding material 140 and the spacer 120. The light shielding material 140 covers the first scan line SL n , the second scan line SL n+1 , and the data lines DL n to DL n+1 .
更詳細而言,請同時參照圖2、圖3以及圖5D,遮光材 料140(高度為H2)填入開口160a內,以覆蓋延伸至開口160a內之部分第一畫素電極PE1。值得一提的是,由於遮光材料140填入開口160a,因此遮光材料140與位於彩色濾光圖案160上之第一畫素電極PE1或第二畫素電極PE2共平面(亦即,彩色濾光圖案160的開口160a被遮光材料140填平)。如此一來,顯示介質30便不會在開口160a的邊緣處因膜層高低變化所導致急遽的傾倒方向變化。亦即,上述之設計可達到避免造成顯示介質30錯向的現象,進而降低漏光及增加對比,並提高顯示品質。 In more detail, please refer to FIG. 2, FIG. 3 and FIG. 5D at the same time, the shading material A material 140 (height H2) is filled into the opening 160a to cover a portion of the first pixel electrode PE1 that extends into the opening 160a. It is worth mentioning that, since the light shielding material 140 is filled in the opening 160a, the light shielding material 140 is coplanar with the first pixel electrode PE1 or the second pixel electrode PE2 located on the color filter pattern 160 (ie, color filter) The opening 160a of the pattern 160 is filled with the light shielding material 140). As a result, the display medium 30 does not change sharply in the direction of the tilt due to the change in the film layer at the edge of the opening 160a. That is, the above design can avoid the phenomenon that the display medium 30 is misaligned, thereby reducing light leakage and increasing contrast, and improving display quality.
在本實施例中,間隙物120與遮光材料140的材質相同,且間隙物120的高度H1大於遮光材料140的高度H2。間隙物120與遮光材料140的材質例如是黑色感光有機材料。間隙物120與遮光材料140的形成方法例如是先塗佈遮光材料層,再使用半調式光罩(half tone mask)以進行曝光及顯影製程而形成具有不同高度的間隙物120與遮光材料140。在本發明中,由於間隙物120與遮光材料140可用同一製程步驟形成,因此可簡化製程流程,進而可縮短製程時間。 In the present embodiment, the spacer 120 is made of the same material as the light shielding material 140, and the height H1 of the spacer 120 is greater than the height H2 of the light shielding material 140. The material of the spacer 120 and the light shielding material 140 is, for example, a black photosensitive organic material. The spacer 120 and the light shielding material 140 are formed by, for example, applying a light shielding material layer, and then using a half tone mask to perform an exposure and development process to form spacers 120 and light shielding materials 140 having different heights. In the present invention, since the spacer 120 and the light shielding material 140 can be formed by the same process step, the process flow can be simplified, and the process time can be shortened.
在本發明的第一實施例中,遮光材料140覆蓋第一掃描線SLn、第二掃描線SLn+1以及資料線DLn~DLn+1。然而,本發明不限於此。在本發明的其他實施例中,畫素結構可更包括遮光圖案142,詳細說明如下。 In the first embodiment of the present invention, the light shielding material 140 covers the first scan line SL n , the second scan line SL n+1 , and the data lines DL n to DL n+1 . However, the invention is not limited thereto. In other embodiments of the invention, the pixel structure may further include a light blocking pattern 142, as described in detail below.
圖6為依照本發明的第二實施例的一種畫素結構180的上視示意圖(為了清楚起見,省略彩色濾光圖案160未繪示),而圖 7A為圖6之畫素結構180的第四圖案層188。圖6所示之畫素結構180的第一、第二以及第三圖案層與上述圖2之實施例之第一、第二以及第三圖案層相同或相似,因此相同的元件以相同的符號表示,且不再重複說明。圖6與上述圖2的第一實施例不同之處在於畫素結構的第四圖案層188不同。詳言之,圖6與圖7A所示之畫素結構180的第四圖案層188之遮光材料140是覆蓋第一掃描線SLn以及第二掃描線SLn+1。另外,圖6之畫素結構180還進一步包括遮光圖案142,如圖7B所示,其中遮光圖案142覆蓋資料線DLn~DLn+1。在此,遮光圖案142與遮光材料140的材質不相同。遮光圖案142的材質例如是黑矩陣材料(例如是黑色樹脂),遮光材料140的材質例如是黑色感光材料。在此,遮光圖案142例如是設置在第三圖案層136(即畫素電極PE1、PE2)之下方,且遮光材料140例如是設置在第三圖案層136(即畫素電極PE1、PE2)之上方。 6 is a top plan view of a pixel structure 180 in accordance with a second embodiment of the present invention (the color filter pattern 160 is omitted for clarity), and FIG. 7A is a pixel structure 180 of FIG. The fourth pattern layer 188. The first, second, and third pattern layers of the pixel structure 180 shown in FIG. 6 are the same as or similar to the first, second, and third pattern layers of the embodiment of FIG. 2 described above, and thus the same elements have the same symbols. Indicates and does not repeat the description. Figure 6 differs from the first embodiment of Figure 2 above in that the fourth pattern layer 188 of the pixel structure is different. In detail, the light shielding material 140 of the fourth pattern layer 188 of the pixel structure 180 shown in FIG. 6 and FIG. 7A covers the first scan line SL n and the second scan line SL n+1 . In addition, the pixel structure 180 of FIG. 6 further includes a light shielding pattern 142 as shown in FIG. 7B, wherein the light shielding pattern 142 covers the data lines DL n ~ DL n+1 . Here, the light shielding pattern 142 and the material of the light shielding material 140 are different. The material of the light shielding pattern 142 is, for example, a black matrix material (for example, a black resin), and the material of the light shielding material 140 is, for example, a black photosensitive material. Here, the light shielding pattern 142 is disposed under the third pattern layer 136 (ie, the pixel electrodes PE1, PE2), and the light shielding material 140 is disposed, for example, on the third pattern layer 136 (ie, the pixel electrodes PE1, PE2). Above.
圖8為依照本發明的第三實施例的一種畫素結構190的上視示意圖(為了清楚起見,省略彩色濾光圖案160未繪示),而圖9A為圖8之畫素結構190的第四圖案層198。圖8所示之畫素結構190的第一、第二以及第三圖案層與上述圖2之實施例之第一、第二以及第三圖案層相同或相似,因此相同的元件以相同的符號表示,且不再重複說明。圖8與上述圖2的第一實施例不同之處在於畫素結構的第四圖案層198不同。詳言之,圖8與圖9A所示之畫素結構190的第四圖案層198之遮光材料140至少是填入開 口160a內。另外,圖8之畫素結構190還進一步包括遮光圖案142,如圖9B所示,其中遮光圖案142覆蓋第一掃描線SLn、第二掃描線SLn+1以及資料線DLn~DLn+1,且遮光圖案142裸露出填入開口160a內之遮光材料140。在此,遮光圖案142與遮光材料140的材質不相同。遮光圖案142的材質例如是黑矩陣材料(例如是黑色樹脂),遮光材料140的材質例如是黑色感光材料。在此,遮光圖案142例如是設置在第三圖案層136(即畫素電極PE1、PE2)之下方,且遮光材料140例如是設置在第三圖案層136(即畫素電極PE1、PE2)之上方。 FIG. 8 is a top plan view of a pixel structure 190 according to a third embodiment of the present invention (the color filter pattern 160 is omitted for clarity), and FIG. 9A is a pixel structure 190 of FIG. The fourth pattern layer 198. The first, second, and third pattern layers of the pixel structure 190 shown in FIG. 8 are the same as or similar to the first, second, and third pattern layers of the embodiment of FIG. 2 described above, and thus the same elements have the same symbols. Indicates and does not repeat the description. FIG. 8 differs from the first embodiment of FIG. 2 described above in that the fourth pattern layer 198 of the pixel structure is different. In detail, the light shielding material 140 of the fourth pattern layer 198 of the pixel structure 190 shown in FIG. 8 and FIG. 9A is at least filled in the opening 160a. In addition, the pixel structure 190 of FIG. 8 further includes a light shielding pattern 142 as shown in FIG. 9B, wherein the light shielding pattern 142 covers the first scan line SL n , the second scan line SL n+1 , and the data lines DL n ~ DL n +1 , and the light shielding pattern 142 exposes the light shielding material 140 filled in the opening 160a. Here, the light shielding pattern 142 and the material of the light shielding material 140 are different. The material of the light shielding pattern 142 is, for example, a black matrix material (for example, a black resin), and the material of the light shielding material 140 is, for example, a black photosensitive material. Here, the light shielding pattern 142 is disposed under the third pattern layer 136 (ie, the pixel electrodes PE1, PE2), and the light shielding material 140 is disposed, for example, on the third pattern layer 136 (ie, the pixel electrodes PE1, PE2). Above.
綜上所述,在本發明的畫素結構及具有此畫素結構的顯示面板中,保護層覆蓋電極圖案,彩色濾光圖案之開口暴露出電極圖案上方之保護層,且第一畫素電極延伸至開口處以與電極圖案產生第二電容耦合效應。由於本發明的畫素結構之分享電容器具有第一電容耦合效應以及第二電容耦合效應,因此可使分享電容器之電容效應提高,進而提高顯示效率。再者,在本發明中,由於遮光材料填入彩色濾光圖案之開口內,因此可改善在彩色濾光圖案的開口的邊緣處發生色偏現象以及產生暗線的問題,進而提高顯示面板的顯示品質。 In summary, in the pixel structure of the present invention and the display panel having the pixel structure, the protective layer covers the electrode pattern, and the opening of the color filter pattern exposes the protective layer above the electrode pattern, and the first pixel electrode Extending to the opening to create a second capacitive coupling effect with the electrode pattern. Since the sharing capacitor of the pixel structure of the present invention has the first capacitive coupling effect and the second capacitive coupling effect, the capacitance effect of the sharing capacitor can be improved, thereby improving display efficiency. Furthermore, in the present invention, since the light-shielding material is filled in the opening of the color filter pattern, the problem of occurrence of color shift and dark lines at the edge of the opening of the color filter pattern can be improved, thereby improving the display of the display panel. quality.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
120‧‧‧間隙物 120‧‧‧Intervals
140‧‧‧遮光材料 140‧‧‧ shading materials
150‧‧‧保護層 150‧‧‧protection layer
150a‧‧‧接觸窗 150a‧‧‧Contact window
160‧‧‧彩色濾光圖案 160‧‧‧Color filter pattern
160a‧‧‧開口 160a‧‧‧ openings
170‧‧‧電極線 170‧‧‧Electrode lines
172‧‧‧絕緣層 172‧‧‧Insulation
174‧‧‧電極圖案 174‧‧‧electrode pattern
CCS‧‧‧分享電容器 C CS ‧‧‧Share capacitor
CCS1、CCS2‧‧‧電容耦合效應 C CS 1, C CS 2‧‧‧ Capacitive coupling effect
SLn‧‧‧掃描線 SL n ‧‧‧ scan line
H1、H2‧‧‧高度 H1, H2‧‧‧ height
I-I’、II-II’‧‧‧線 I-I’, II-II’‧‧‧ line
PE1‧‧‧畫素電極 PE1‧‧‧ pixel electrode
Claims (12)
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TWI635609B (en) * | 2016-07-29 | 2018-09-11 | 南韓商Lg顯示器股份有限公司 | Organic light emitting diode display |
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CN105044973B (en) * | 2015-08-27 | 2018-07-10 | 深圳市华星光电技术有限公司 | COA type liquid crystal display panels |
CN105807478A (en) * | 2016-05-20 | 2016-07-27 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and manufacturing method thereof |
TWI690747B (en) * | 2018-12-05 | 2020-04-11 | 友達光電股份有限公司 | Pixel array substrate |
TWI692816B (en) * | 2019-05-22 | 2020-05-01 | 友達光電股份有限公司 | Display device and method for manufacturing the same |
CN112068370B (en) | 2020-09-09 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and manufacturing method thereof |
CN112363356B (en) * | 2020-11-17 | 2022-02-22 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
CN113504680B (en) * | 2021-06-29 | 2023-03-31 | 惠科股份有限公司 | Array substrate, manufacturing method of array substrate and display panel |
CN113741108B (en) * | 2021-08-31 | 2022-07-22 | 惠科股份有限公司 | Array substrate, display panel and display device |
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