TW202010008A - Method for protecting wafer, protective member and method for producing protective member which can prevent the quality degradation of a wafer - Google Patents

Method for protecting wafer, protective member and method for producing protective member which can prevent the quality degradation of a wafer Download PDF

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TW202010008A
TW202010008A TW108129810A TW108129810A TW202010008A TW 202010008 A TW202010008 A TW 202010008A TW 108129810 A TW108129810 A TW 108129810A TW 108129810 A TW108129810 A TW 108129810A TW 202010008 A TW202010008 A TW 202010008A
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sheet
wafer
protective member
adhesive force
adhesion
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小林真
椙浦一輝
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

This invention provides a method for protecting a wafer, a protective member and a method for producing a protective member for preventing the quality degradation of a wafer. According to the present invention, a method for protecting a wafer is provided, wherein a sheet-shaped protective member 22a is disposed on a surface of the wafer 10 to protect the wafer. The method for protecting a wafer at least comprises the following steps: a sheet preparation step of preparing a polyolefin-based sheet or a polyester-based sheet as the base material of the protective member 22a; an adhesive generating step of heating a surface of the sheet 20 and generating an adhesive force; and a sheet crimping step of laying the surface of the sheet 20 that has the generated adhesive force on the surface (front surface 10a) of the wafer 10 to be protected, and applying a pushing force to press the sheet 20 on the front surface 10a of the wafer 10.

Description

晶圓保護方法、保護構件以及保護構件生成方法Wafer protection method, protection member and protection member generation method

本發明是關於一種晶圓保護方法、保護構件以及保護構件生成方法。The invention relates to a wafer protection method, a protection member and a protection member generation method.

藉由分割預定線劃分而在正面形成IC、LSI等多個元件的晶圓，在藉由研削裝置研削其背面且形成預定厚度後，藉由切割裝置分割成各個元件並利用於手機、個人電腦等的電子設備。A wafer with multiple components such as IC and LSI formed on the front side by dividing the planned line. After grinding the back surface of the wafer with a grinding device and forming a predetermined thickness, the wafer is divided into individual components by a cutting device and used in mobile phones and personal computers. Electronic equipment.

研削裝置至少由下述構件所構成，並可加工晶圓至期望厚度：卡盤台，具有保護晶圓的保持面；研削手段，具備可旋轉的研削輪，該研削輪是研削被該卡盤台保持之晶圓的上表面；以及進給手段，研削進給研削磨石（例如，參照專利文獻1）。The grinding device is composed of at least the following components and can process the wafer to a desired thickness: a chuck table with a holding surface to protect the wafer; a grinding means with a rotatable grinding wheel that grinds the chuck The upper surface of the wafer held by the stage; and the feed means, grinding the feed grinding stone (for example, refer to Patent Document 1).

此外，在晶圓的正面黏貼具有黏著膠的保護膠膜，以使形成於晶圓正面之多個元件不會因卡盤台的保持面與晶圓正面的接觸而受損傷。In addition, a protective adhesive film with adhesive glue is stuck on the front surface of the wafer so that the multiple elements formed on the front surface of the wafer will not be damaged due to the contact between the holding surface of the chuck table and the front surface of the wafer.

[習知技術文獻] [專利文獻] [專利文獻]日本特開2005－246491號公報[Conventional Technical Literature] [Patent Literature] [Patent Literature] Japanese Unexamined Patent Publication No. 2005-246491

[發明所欲解決的課題] 雖然黏貼在晶圓正面的保護膠膜在實施研削加工後會從晶圓正面剝離，但若從晶圓剝離保護膠膜，則保護膠膜之黏著膠的一部分會繼續附著在晶圓的正面而殘留，會有元件品質下降的問題。[Problems to be solved by the invention] Although the protective adhesive film attached to the front surface of the wafer will be peeled from the front surface of the wafer after grinding, if the protective adhesive film is peeled from the wafer, part of the adhesive of the protective adhesive film will continue to adhere to the front surface of the wafer. Residual, there will be a problem of component quality degradation.

此外，在以雷射加工裝置或切割裝置等的加工裝置加工晶圓的情況下，以在具有容納晶圓之開口的環狀框架上容納晶圓，且以黏著膠膜黏貼晶圓背面與該框架，並透過黏著膠膜以框架支撐晶圓的狀態，而將該晶圓保持在各加工裝置並實施加工。將透過此黏著膠膜而以框架支撐的晶圓分割成各個元件晶片後，若從黏著膠膜上拾取元件晶片，則依然會在元件晶片的背面附著並殘留黏著膠膜之膠劑的一部分，會有元件晶片品質下降的問題。In addition, when processing a wafer with a processing device such as a laser processing device or a dicing device, the wafer is accommodated on a ring frame having an opening for accommodating the wafer, and the back surface of the wafer and the wafer are adhered with an adhesive film The frame supports the wafer in a state where the frame supports the wafer through an adhesive film, and the wafer is held in each processing device and processed. After dividing the wafer supported by the frame through the adhesive film into individual component chips, if the component chip is picked up from the adhesive film, a part of the adhesive of the adhesive film will still adhere to the back of the component chip, There will be a problem that the quality of the device chip is degraded.

本發明是鑑於上述問題而完成的發明，其主要的技術課題為提供一種晶圓保護方法、保護構件及保護構件生成方法，用於防止元件的品質下降。The present invention is made in view of the above problems, and its main technical subject is to provide a wafer protection method, a protection member, and a protection member generation method for preventing the deterioration of the quality of the device.

[解決課題的技術手段] 為了解決上述主要的技術課題，根據本發明，提供一種晶圓保護方法，用於配設片狀之保護構件並保護晶圓，該晶圓保護方法至少由下述步驟所構成：薄片準備步驟，準備作為保護構件之基材的聚烯烴類薄片或聚酯類薄片；黏著力生成步驟，加熱該薄片的表面並生成黏著力；及薄片壓接步驟，將已生成黏著力的薄片表面鋪設在要保護的晶圓表面上，賦予推壓力並將薄片壓接在晶圓表面上。[Technical means to solve the problem] In order to solve the above main technical problems, according to the present invention, a wafer protection method is provided for arranging a sheet-shaped protection member and protecting a wafer. The wafer protection method is composed of at least the following steps: a sheet preparation step, Prepare a polyolefin-based sheet or a polyester-based sheet as the base material of the protective member; an adhesive force generation step to heat the surface of the sheet and generate adhesive force; and a sheet crimping step to lay the surface of the sheet that has generated the adhesive force on the On the protected wafer surface, the pressing force is applied and the sheet is pressed against the wafer surface.

該晶圓的保護方法之該黏著力生成步驟中，較佳為噴射來自加熱手段的熱風且吹付至薄片的表面，並加熱至不使薄片自身熔融且能賦予黏著力的溫度而於該薄片上生成黏著力。In the adhesion generation step of the wafer protection method, it is preferable to spray hot air from the heating means and blow it onto the surface of the sheet, and heat to a temperature that does not melt the sheet itself and can impart adhesion to the sheet Generate adhesion.

根據本發明，提供一種片狀保護構件，加熱聚烯烴類薄片或聚酯類薄片的表面並生成黏著力。According to the present invention, there is provided a sheet-shaped protective member that heats the surface of a polyolefin-based sheet or a polyester-based sheet and generates adhesive force.

根據本發明，提供一種片狀保護構件的生成方法，至少由以下步驟所構成：薄片準備步驟，準備作為保護構件的聚烯烴類薄片或聚酯類薄片；以及黏著力生成步驟，加熱該薄片的表面並生成黏著力。According to the present invention, there is provided a method for producing a sheet-shaped protective member, which is composed of at least the following steps: a sheet preparation step, preparing a polyolefin-based sheet or a polyester sheet as a protection member; and an adhesive force generation step, heating the sheet Surface and generate adhesion.

該保護構件的生成方法之該黏著力生成步驟中，較佳為噴射來自加熱手段的熱風且吹附至薄片的表面，並加熱至比薄片自身熔融溫度低且能賦予黏著力的溫度而於該薄片上生成黏著力。In the adhesive force generating step of the method for generating the protective member, it is preferable to spray hot air from the heating means and blow it onto the surface of the sheet, and heat it to a temperature lower than the melting temperature of the sheet itself and to impart adhesive force to the Adhesion is generated on the sheet.

[發明效果] 本發明之晶圓保護方法至少由以下步驟所構成：薄片準備步驟，準備作為保護構件之基材的聚烯烴類薄片或聚酯類薄片；黏著力生成步驟，加熱該薄片的表面並生成黏著力；薄片壓接步驟，將已生成黏著力的薄片表面鋪設在要保護的晶圓表面，賦予推壓力並將薄片壓接在晶圓表面；因此，即使從晶圓正面剝離保護構件也不會有黏著膠的一部分附著在晶圓正面的情形，解決了元件品質下降的問題。此外，該晶圓保護方法中，在將晶圓分割成各個元件晶片時，以該保護構件作為黏著膠膜而使用的情況下，將晶圓分割成各個元件晶片之後，即使從黏著膠膜上拾取元件晶片也不會有元件晶片的背面附著黏著膠之一部分的情形，解決了元件晶片品質下降的問題。[Effect of the invention] The wafer protection method of the present invention is composed of at least the following steps: a sheet preparation step, preparing a polyolefin-based sheet or a polyester-based sheet as a base material of the protective member; an adhesion generation step, heating the surface of the sheet and generating adhesion ; Sheet crimping step, laying the surface of the sheet that has generated adhesion on the surface of the wafer to be protected, giving pushing force and crimping the sheet on the wafer surface; therefore, even if the protective member is peeled from the front of the wafer, there will be no A part of the adhesive is attached to the front of the wafer, which solves the problem of device quality degradation. In addition, in this wafer protection method, when the wafer is divided into individual element wafers, when the protective member is used as an adhesive film, after the wafer is divided into individual element chips, even from the adhesive film When picking up a component wafer, there is no case where a part of the adhesive is attached to the back surface of the component wafer, which solves the problem of degradation of the quality of the component wafer.

根據本發明提供之保護構件及保護構件的生成方法，即使從晶圓正面剝離保護構件，也不會有黏著膠的一部分附著在晶圓正面的情形，解決了元件品質降低的問題，此外，該保護構件及保護構件生成方法中，在應用了作為將晶圓分割成各個元件晶片時的黏著膠膜而發揮作用之保護構件，及生成保護構件的方法之情況下，將晶圓分割成各個元件晶片之後，即使從黏著膠膜上拾取元件晶片也不會有元件晶片的背面附著黏著膠之一部分的情形，解決了元件晶片品質下降的問題。According to the protective member and the method for generating the protective member provided by the present invention, even if the protective member is peeled off from the front surface of the wafer, a part of the adhesive does not adhere to the front surface of the wafer, which solves the problem of degraded device quality. In addition, the In the case of a protective member and a method of generating a protective member, when a protective member that functions as an adhesive film when dividing a wafer into individual element wafers and a method of generating the protective member are applied, the wafer is divided into individual elements After the wafer, even if the component wafer is picked up from the adhesive film, there is no case where a part of the adhesive is attached to the back of the component wafer, which solves the problem of the quality degradation of the component wafer.

以下，參照隨附圖式詳細說明根據本發明而構成之晶圓的保護方法，保護構件及保護構件生成方法之相關實施方式。Hereinafter, referring to the accompanying drawings, a detailed description will be given of related embodiments of a method for protecting a wafer constructed according to the present invention, a protection member, and a method for generating a protection member.

在實施本發明相關之晶圓的保護方法時，首先，實施薄片準備步驟，準備使用於本實施方式之作為保護構件之基材的薄片。When implementing the wafer protection method according to the present invention, first, a sheet preparation step is performed to prepare a sheet used as a base material of a protection member in this embodiment.

圖1表示作為保護構件之基材的薄片20的立體圖。薄片20作為保護構件而作用時，將其設定成比作為保護對象之晶圓的直徑還大的寬度尺寸。薄片20可以選自聚烯烴類的薄片或聚酯類的薄片，在本實施方式中，選擇自聚烯烴類中的聚乙烯薄片。圖1顯示在未生成黏著性的狀態下，薄片20從捲繞在中心軸A1的薄片滾輪20A往以箭頭X表示的方向拉出其一部分，並使其起始端捲繞在中心軸A2的狀態。薄片滾輪20A的中心軸A1及中心軸A2共同被保護構件生成裝置（省略圖示）之未圖示的支撐構件旋轉自如地支撐，在捲繞側的中心軸A2上配設有未圖示的旋轉驅動手段，可以藉由作業者之未圖示的按鈕操作將薄片20捲繞。薄片20有正面20a及背面20b，正面20a上有微小的凹凸，被賦予了所謂的咬花加工，背面20b側相較之下則是平坦面。FIG. 1 shows a perspective view of a sheet 20 as a base material of a protective member. When the sheet 20 functions as a protection member, it is set to a width larger than the diameter of the wafer to be protected. The sheet 20 may be selected from polyolefin-based sheets or polyester-based sheets. In this embodiment, it is selected from polyolefin-based polyethylene sheets. FIG. 1 shows a state where the sheet 20 is pulled out from the sheet roller 20A wound on the central axis A1 in the direction indicated by the arrow X in the state where adhesion is not generated, and its starting end is wound around the central axis A2 . The center axis A1 and the center axis A2 of the sheet roller 20A are rotatably supported by a support member (not shown) of a protection member generating device (not shown), and a center axis A2 on the winding side is provided with a not-shown The rotation driving means can wind the sheet 20 by a button operation not shown by the operator. The sheet 20 has a front surface 20a and a back surface 20b. The front surface 20a has minute irregularities and is given a so-called biting process. The back surface 20b side is flat compared to the back surface.

若如上述方式準備好作為保護構件之基材的薄片20，則實施黏著力生成步驟，於薄片20上生成黏著力並成為作為保護構件而發揮作用的狀態。以下參照圖2，同時更具體地說明黏著力生成步驟。When the sheet 20 serving as the base material of the protective member is prepared as described above, an adhesive force generation step is performed, and the adhesive force is generated on the sheet 20 to be in a state of functioning as a protective member. Hereinafter, referring to FIG. 2, the step of generating the adhesive force will be described more specifically.

在實施黏著力生成步驟時，如圖2所示，從薄片滾輪20A拉出預定長度之薄片20，並在薄片20的背面20b下方定位加熱手段30。加熱手段30具備加熱器本體部30及噴射部34。在加熱器本體部32內部裝有未圖示的加熱體，溫度感應器，送風機構等。噴射部34形成為用來噴射從加熱器本體部32送出的熱風之圓筒形狀，以加熱器本體部32生成的熱風W從噴射部34的噴射口34a朝向上方噴射。此加熱手段30連接有未圖示的電源及控制裝置，並具備該溫度感應器，藉此能調整從噴射口34a噴射的熱風W至期望溫度（本實施方式中為300℃）。When performing the adhesive force generation step, as shown in FIG. 2, the sheet 20 of a predetermined length is pulled out from the sheet roller 20A, and the heating means 30 is positioned below the back surface 20 b of the sheet 20. The heating means 30 includes a heater body 30 and a spraying part 34. A heater (not shown), temperature sensor, air blowing mechanism, etc. are installed inside the heater body 32. The injection portion 34 is formed in a cylindrical shape for injecting hot air sent from the heater body portion 32, and the hot air W generated by the heater body portion 32 is injected upward from the injection port 34 a of the injection portion 34. This heating means 30 is connected to a power source and a control device (not shown), and is provided with the temperature sensor, whereby the hot air W injected from the injection port 34a can be adjusted to a desired temperature (300°C in the present embodiment).

若運作加熱手段30並將熱風W朝向薄片20之背面20b噴射，則熱風W在從噴射口34a到薄片20間的距離間被冷卻而將薄片20之預定的保護構件區域22加熱至90～110℃。此90～110℃的溫度還不到作為薄片20所選擇的聚乙烯薄片的熔融溫度（120～140℃），是不會熔解（流動化）的溫度，而且是薄片20會生成黏著力的溫度（黏著力生成溫度）。再者，也可以根據實施黏著力生成步驟之作業現場的氣溫或從噴射口34a到薄片20之背面20b的距離等，適當調整從加熱手段30噴射之熱風W的溫度，以將薄片20的溫度變成上述黏著力生成溫度。再者，加熱手段30並不限定於如上述般噴射熱風而加熱的手段，也可以是將形成平板狀的發熱板直接接觸薄片20來加熱的手段。When the heating means 30 is operated and hot air W is sprayed toward the back surface 20b of the sheet 20, the hot air W is cooled at the distance from the injection port 34a to the sheet 20 to heat the predetermined protective member region 22 of the sheet 20 to 90 to 110 ℃. The temperature of 90 to 110°C is less than the melting temperature (120 to 140°C) of the polyethylene sheet selected as the sheet 20, which is a temperature that does not melt (fluidize), and the temperature at which the sheet 20 will generate adhesive force (Adhesion generates temperature). Furthermore, the temperature of the hot air W sprayed from the heating means 30 may be appropriately adjusted according to the temperature of the work site where the adhesive force generation step is performed or the distance from the injection port 34a to the back surface 20b of the sheet 20 to adjust the temperature of the sheet 20 It becomes the above-mentioned adhesive force generation temperature. In addition, the heating means 30 is not limited to the means by which hot air is sprayed and heated as described above, and may be a means of directly heating the sheet-shaped heating plate in contact with the sheet 20 to heat it.

雖然在薄片20中之加熱至黏著力生成溫度的保護構件區域22設定成至少比使用保護構件之晶圓還大之區域，但也可以是從薄片滾輪20A拉出而露出的薄片20全體。能夠從噴射部34噴出熱風W的面積是狹小的之情況下，可以使薄片20、加熱手段30的任一者適當在水平方向上移動，藉此能加熱期望之保護構件區域22的全體。再者，圖2及圖4至圖6中，在說明方便上，雖然以能區別已生成黏著力之保護構件區域22與未生成黏著力之區域的方式強調表示，但實際上已生成黏著力的保護構件區域22與未生成黏著力的其他區域並非有能明確可視的變化。藉由以上方式結束黏著力生成步驟，成為在薄片20上賦予黏著力且將保護構件區域22作為保護構件而發揮作用的狀態。亦即，上述薄片準備步驟及黏著力生成步驟構成了保護構件生成方法。Although the protection member region 22 heated to the adhesive force generation temperature in the sheet 20 is set to be at least a region larger than the wafer using the protection member, it may be the entire sheet 20 exposed by being pulled out from the sheet roller 20A. When the area where the hot air W can be ejected from the ejection portion 34 is narrow, any one of the sheet 20 and the heating means 30 can be appropriately moved in the horizontal direction, thereby heating the entire desired protection member region 22. In addition, in FIGS. 2 and 4 to 6, for convenience of description, although it is emphasized in such a manner that the protective member region 22 that has generated adhesion force can be distinguished from the region that has not generated adhesion force, actually adhesion force has been generated. The area 22 of the protective member and other areas where no adhesive force is generated are not clearly visible. By completing the adhesive force generation step in the above manner, the adhesive force is applied to the sheet 20 and the protective member region 22 functions as a protective member. That is, the above-mentioned sheet preparation step and adhesive force generation step constitute a protection member generation method.

如上述方式，若已加熱薄片20的表面且在薄片20生成黏著力，則實施薄片壓接步驟，將生成黏著力之薄片20的表面（保護構件區域22）鋪設在要保護的晶圓表面，賦予推壓力並將薄片壓接至晶圓表面。以下參照圖3至圖5，同時更具體地說明薄片壓接步驟。As described above, if the surface of the sheet 20 has been heated and adhesive force is generated on the sheet 20, a sheet pressure bonding step is performed to lay the surface (protection member region 22) of the sheet 20 that generates the adhesive force on the surface of the wafer to be protected, Apply pressure and crimp the wafer to the wafer surface. 3 to 5 below, the sheet crimping step will be described more specifically.

在實施薄片壓接步驟時，如圖3所示，準備用於研削加工而需要黏貼保護構件的晶圓10。晶圓10是由半導體基板所構成，其正面10a形成有藉由分割預定線14而劃分的多個元件12。因為此晶圓10的正面10a是要保護的面，所以將背面10b側朝向下方， 並將晶圓10載置在具有通氣性的吸附卡盤42上，該吸附卡盤42是形成於用以實施薄片壓接步驟之保持台40上。保持台40連接有未圖示的吸引手段，藉由使該吸引手段運作而在保持台40上吸引保持晶圓10（晶圓準備步驟）。再者，此晶圓準備步驟可以在薄片壓接步驟之前完成，也可以在黏著力形成步驟實施前或實施後任一時間點完成。When performing the sheet crimping step, as shown in FIG. 3, a wafer 10 that needs to be attached with a protective member for grinding processing is prepared. The wafer 10 is composed of a semiconductor substrate, and a plurality of elements 12 divided by a planned dividing line 14 are formed on the front surface 10a. Since the front surface 10a of the wafer 10 is the surface to be protected, the side of the back surface 10b is directed downwards, and the wafer 10 is placed on a breathable suction chuck 42 which is formed on The holding table 40 that performs the sheet crimping step. The holding table 40 is connected to a suction means (not shown), and the wafer 10 is suction-held on the holding table 40 by operating the suction means (wafer preparation step). Furthermore, this wafer preparation step may be completed before the sheet crimping step, or it may be completed at any time before or after the adhesion forming step.

若已將晶圓10保持在保持台40上，則如圖4所示，替換已定位在保護構件區域22下方的加熱手段30，將已保持晶圓10的保持台40定位在保護構件區域22的下方。若已將保持台40定位在保護構件區域22下方，則調整薄片20或保持台40的高度，以使被保持台40保持的晶圓10與保護構件區域22之下表面接觸。If the wafer 10 has been held on the holding table 40, as shown in FIG. 4, the heating means 30 positioned below the protective member area 22 is replaced, and the holding table 40 holding the wafer 10 is positioned on the protective member area 22 Below. If the holding table 40 has been positioned below the protective member region 22, the height of the sheet 20 or the holding table 40 is adjusted so that the wafer 10 held by the holding table 40 is in contact with the lower surface of the protective member region 22.

若已將晶圓10定位在保護構件區域22的下表面，則將如圖5所示的推壓滾輪50定位在保護構件區域22的上方。推壓滾輪50是由具有彈性的硬質聚氨酯橡膠等所構成。若已將推壓滾輪50定位在保護構件區域22的上方，則使其往以箭頭Z所表示的方向下降並推抵至保護構件區域22，使推壓滾輪50往以箭頭R1所表示的方向旋轉，同時使其從前側端部往以箭頭D所表示的方向移動，將保護構件區域22按壓並壓接在晶圓10正面10a之全體。以此方式進行，並結束薄片壓接步驟。再者，如上述方式，雖然薄片20之保護構件區域22被預先加熱並生成有黏著力，但即使溫度下降也能維持黏著力。此外，因為薄片20的正面20a側上形成有微小的凹凸，所以即使是實施黏著力生成步驟之保護構件區域22上賦予有黏著力的情形，也能防止推壓滾輪50不小心黏貼在薄片20上。藉由以上方式完成薄片壓接步驟，晶圓10的正面10a成為藉由薄片20之保護構件區域33所保護的狀態。If the wafer 10 has been positioned on the lower surface of the protection member region 22, the push roller 50 as shown in FIG. 5 is positioned above the protection member region 22. The pressing roller 50 is made of hard urethane rubber having elasticity or the like. If the pressing roller 50 has been positioned above the protective member region 22, it is lowered in the direction indicated by the arrow Z and pushed against the protective member region 22, so that the pressing roller 50 is directed in the direction indicated by the arrow R1 While rotating, it is moved from the front end to the direction indicated by the arrow D, and the protection member region 22 is pressed and pressed against the entire front surface 10 a of the wafer 10. In this way, the sheet crimping step is ended. Furthermore, as described above, although the protective member region 22 of the sheet 20 is previously heated to generate adhesive force, the adhesive force can be maintained even if the temperature drops. In addition, since fine irregularities are formed on the front surface 20a side of the sheet 20, even if an adhesive force is imparted to the protective member region 22 that performs the adhesive force generation step, the pressing roller 50 can be prevented from accidentally adhering to the sheet 20 on. By completing the sheet crimping step in the above manner, the front surface 10a of the wafer 10 is protected by the protection member region 33 of the sheet 20.

若已完成上述薄片壓接步驟，則考慮到後述的研削加工而實施依照晶圓10的形狀切斷薄片20的薄片切斷步驟。以下參照圖6同時說明薄片切斷步驟。When the above-mentioned sheet crimping step has been completed, the sheet cutting step of cutting the sheet 20 according to the shape of the wafer 10 is performed in consideration of grinding processing described later. Hereinafter, the sheet cutting step will be described simultaneously with reference to FIG. 6.

若已實施上述薄片壓接步驟，如圖6所示，替換推壓滾輪50並將保護構件區域22上方的圓盤狀滾輪切割器52定位至晶圓10之外周緣的上方。若已將滾輪切割器52定位至晶圓10之外周緣上，則接著將滾輪切割器52往箭頭R2的方向旋轉，同時使其沿著晶圓10的外緣移動而將薄片20切割成圓形狀。根據以上方式，完成薄片切斷步驟。If the above-mentioned sheet crimping step has been carried out, as shown in FIG. 6, the pushing roller 50 is replaced and the disc-shaped roller cutter 52 above the protection member area 22 is positioned above the outer periphery of the wafer 10. If the roller cutter 52 has been positioned on the outer periphery of the wafer 10, then the roller cutter 52 is rotated in the direction of arrow R2 while moving it along the outer edge of the wafer 10 to cut the sheet 20 into a circle shape. According to the above manner, the sheet cutting step is completed.

若已完成上述薄片切斷步驟，使保持台40下降或使薄片20全體上升，讓薄片20與晶圓10互相遠離。藉此，如圖7上段所示的保護構件區域22中，沿著晶圓10之外周圍而切割完的保護構件22a成為黏貼在晶圓10上的狀態。再者，在從薄片20切割並切開保護構件22a後，藉由使捲繞側的中心軸A2旋轉並捲繞切出之保護構件22a的區域，而能夠從薄片滾輪20A拉出未實施黏著力生成步驟的區域，並使其成為可以再次實施黏著力生成步驟的狀態。然後，藉由適當地重複上述的黏著力生成步驟、薄片壓接步驟及薄片切斷步驟，能夠對多個晶圓10配設保護構件22a。If the above-mentioned sheet cutting step has been completed, the holding table 40 is lowered or the entire sheet 20 is raised to move the sheet 20 and the wafer 10 away from each other. As a result, in the protective member region 22 shown in the upper stage of FIG. 7, the protective member 22 a cut along the outer periphery of the wafer 10 is stuck to the wafer 10. Furthermore, after cutting and cutting the protective member 22a from the sheet 20, by rotating the central axis A2 on the winding side and winding the area of the cut protective member 22a, the unadhesive force can be pulled out from the sheet roller 20A The area where the step is generated, and make it possible to perform the adhesion generation step again. Then, by appropriately repeating the above-mentioned adhesive force generation step, sheet crimping step, and sheet cutting step, the protection member 22 a can be arranged on the plurality of wafers 10.

如上述方式，若保護構件22a已是黏貼在晶圓10之正面10a的狀態，則可以對晶圓10的背面10b實施研削加工。以下參照圖7、圖8說明晶圓背面研削加工。As described above, if the protective member 22a is already attached to the front surface 10a of the wafer 10, the back surface 10b of the wafer 10 can be ground. The wafer back grinding process will be described below with reference to FIGS. 7 and 8.

對晶圓10實施背面研削步驟時，如圖7所示，將晶圓10的保護構件22a側朝向下方，以背面10b露出於上方的狀態將晶圓10載置在研削裝置60（只表示局部）的卡盤台62上。卡盤台62的上表面形成有具有通氣性的吸附卡盤62a，該吸附卡盤62a連接有未圖示的吸引手段。藉由使該吸引手段運作，吸引保持透過保護構件22a而載置在卡盤台62上的晶圓10。When performing the back grinding process on the wafer 10, as shown in FIG. 7, the wafer 10 is placed with the protective member 22a side downward, and the wafer 10 is placed on the grinding device 60 with the back surface 10b exposed above (only a partial view is shown) ) On the chuck table 62. The upper surface of the chuck table 62 is formed with a suction chuck 62a having air permeability, and a suction means (not shown) is connected to the suction chuck 62a. By operating this attraction means, the wafer 10 placed on the chuck table 62 through the protection member 22a is attracted and held.

如圖8所示，研削裝置60具備研削手段70，該研削手段70是用於將吸引保持於卡盤台62上之晶圓10的背面10b進行研削並薄化。研削手段70具備：旋轉主軸72，藉由未圖示的旋轉驅動機構而旋轉；安裝座74，裝設在旋轉主軸72的下端；及研削輪76，安裝在安裝座74的下表面，且研削輪76的下表面環狀地配設有多個研削磨石78。As shown in FIG. 8, the grinding device 60 includes grinding means 70 for grinding and thinning the back surface 10 b of the wafer 10 attracted and held on the chuck table 62. Grinding means 70 includes: a rotating spindle 72, which is rotated by a rotation drive mechanism (not shown); a mounting seat 74, which is installed at the lower end of the rotating spindle 72; and a grinding wheel 76, which is mounted on the lower surface of the mounting seat 74, and grinds A plurality of grinding stones 78 are arranged in a ring shape on the lower surface of the wheel 76.

若已將晶圓10吸引保持在卡盤台62上，則使研削手段70的旋轉主軸72往圖8中箭頭R3所示的方向以例如300rpm的轉速旋轉，同時使卡盤台62往箭頭R4所示的方向以例如300rpm的轉速旋轉。然後，藉由未圖示的研削水供給手段，一邊供給研削水至晶圓10的背面10b上，一邊使研削磨石78接觸晶圓10的背面10b，將研削輪76以例如1μｍ／秒的研削進給速度朝向下方進行研削進給。此時，可以一邊藉由未圖示之接觸式測量規來量測晶圓10的厚度一邊進行研削，若將晶圓10的背面10b進行預定程度研削並已讓晶圓10達到預定厚度，則停止研削手段70，經過清洗、乾燥步驟後，結束研削晶圓10之背面10b的背面研削加工。If the wafer 10 has been sucked and held on the chuck table 62, the rotating spindle 72 of the grinding means 70 is rotated in the direction indicated by the arrow R3 in FIG. 8 at, for example, 300 rpm, and the chuck table 62 is moved toward the arrow R4 The direction shown rotates at, for example, 300 rpm. Then, by means of a grinding water supply means (not shown), while grinding water is supplied to the back surface 10b of the wafer 10, the grinding stone 78 is brought into contact with the back surface 10b of the wafer 10, and the grinding wheel 76 is set at, for example, 1 μm/sec. Grinding feed is performed at the grinding feed rate downward. At this time, it is possible to perform grinding while measuring the thickness of the wafer 10 by a contact measuring gauge (not shown). If the back surface 10b of the wafer 10 is ground to a predetermined degree and the wafer 10 has reached a predetermined thickness, then The grinding means 70 is stopped, and after the washing and drying steps, the grinding of the back surface of the back surface 10b of the grinding wafer 10 is ended.

若已結束上述背面研削加工，則從晶圓10的正面10a剝離保護構件22a（保護構件剝離步驟）。若已結束該保護構件剝離步驟，則搬送晶圓10至適當之下個步驟（分割步驟等），或搬送並收納至用來容納完成背面加工之晶圓10的收納容器等。本實施方式中，如上述方式，藉由加熱從聚烯烴類薄片或聚酯類薄片中所選擇的聚乙烯薄片而生成賦有黏著力的保護構件22a，且保護構件22a與晶圓10之正面10a不須透過黏著膠等而能黏貼在一起。藉此，即使從晶圓10的正面10a剝離保護構件22a也不會有黏著膠之一部分附著在晶圓正面的情形，從而解決使元件品質下降的問題。When the back grinding process is completed, the protective member 22a is peeled from the front surface 10a of the wafer 10 (protective member peeling step). When the protection member peeling step has been completed, the wafer 10 is transported to the next appropriate step (dividing step, etc.), or is transported and stored in a storage container for storing the wafer 10 that has undergone back processing. In this embodiment, as described above, by heating the polyethylene sheet selected from the polyolefin-based sheet or the polyester-based sheet, the protective member 22 a with adhesive force is generated, and the protective member 22 a and the front surface 10 a of the wafer 10 It can be pasted together without adhesive. Thereby, even if the protective member 22a is peeled off from the front surface 10a of the wafer 10, part of the adhesive does not adhere to the front surface of the wafer, thereby solving the problem of degrading the device quality.

本發明並不限定於上述的實施方式，以下提供各種變化例。上述的實施方式中，雖然說明了將加熱聚乙烯表面而生成黏著力的保護構件22a當作對實施背面研削加工之晶圓10的正面10a進行保護的保護構件22a而使用的例子，但本發明不限定於此。作為其他的實施方式，可以讓根據本發明提供的保護構件成為以下情況的黏著膠膜：將晶圓容納在具有容納晶圓之開口的環狀框架上，並以黏著膠膜黏貼晶圓背面及該框架，讓晶圓透過黏著膠膜成為以框架支撐的狀態。以下，一邊參照圖9一邊說明其他的實施方式。The present invention is not limited to the above-mentioned embodiment, and various modifications are provided below. In the above-mentioned embodiment, although the protective member 22a that generates adhesive force by heating the polyethylene surface is described as the protective member 22a that protects the front surface 10a of the wafer 10 subjected to back grinding, the present invention does not Limited to this. As another embodiment, the protective member provided according to the present invention may be an adhesive adhesive film in which a wafer is accommodated on a ring frame having an opening for accommodating the wafer, and the back surface of the wafer and the wafer are adhered with an adhesive adhesive film The frame allows the wafer to be supported by the frame through the adhesive film. Hereinafter, other embodiments will be described with reference to FIG. 9.

圖9（a）表示薄片壓接步驟之實施態樣的立體圖，該薄片壓接步驟是對作為晶圓10之背面10b上的黏著膠膜而作用的保護構件進行壓接。如圖9（a）所示的薄片20’是聚乙烯薄片，實施上述的黏著力生成步驟而對其全體賦予黏著力，並將其切割成能覆蓋實施薄片壓接步驟之保持台80全體的大小而形成保護構件24。保持台80的上表面形成平坦面，並以能夠載置具有可容納晶圓10之開口的環狀框架F全體的尺寸而設定。FIG. 9( a) is a perspective view showing an embodiment of a sheet crimping step for crimping a protective member acting as an adhesive film on the back surface 10 b of the wafer 10. As shown in FIG. 9(a), the sheet 20' is a polyethylene sheet, and the above-mentioned adhesive force generation step is performed to apply adhesive force to the entire body, and it is cut to cover the entire holder 80 that performs the sheet pressure bonding step. The size of the protection member 24 is formed. The upper surface of the holding table 80 forms a flat surface, and is set to a size that can mount the entire ring frame F having an opening capable of accommodating the wafer 10.

實施薄片壓接步驟時，如圖9（a）所示的方式，在保持台80的上表面82上載置具有開口Fa的環狀框架F及容納於該開口Fa且其背面10b朝向上方的晶圓10。在保持台80上以覆蓋晶圓10及框架F的方式鋪設上述保護構件24，並與根據圖5所說明的薄片壓接步驟相同，藉由使推壓滾輪50’旋轉且使其往箭頭D所表示的方向移動，夾住保護構件24並對晶圓10及框架F全體賦予推壓力而壓接保護構件24於框架F及晶圓10上。藉由以上方式，完成薄片壓接步驟。When performing the sheet crimping step, as shown in FIG. 9( a ), on the upper surface 82 of the holding table 80, the ring-shaped frame F having the opening Fa and the crystal housed in the opening Fa and the back surface 10 b facing upward are placed Round 10. The above-mentioned protective member 24 is laid on the holding table 80 so as to cover the wafer 10 and the frame F, and is the same as the sheet crimping step described with reference to FIG. 5, by rotating the pressing roller 50' and moving it to the arrow D The movement in the indicated direction sandwiches the protective member 24 and applies a pressing force to the entire wafer 10 and the frame F to press-bond the protective member 24 to the frame F and the wafer 10. In the above manner, the sheet crimping step is completed.

若如上述方式完成了薄片壓接步驟，則以如圖9（b）所示的方式使用滾輪切割器52，沿著框架F上的線條L將保護構件24切割成圓形，留下修整成圓形的保護構件24a並除去殘留的外周部（薄片切斷步驟）。圖9（c）表示結束薄片切斷步驟後，將框架F所支撐的晶圓10翻面並使晶圓10的正面10a露出於上方的狀態，以能從圖式理解的方式，使用作為黏著膠膜而作用的保護構件24a來黏貼晶圓10的背面10b及框架F，並透過保護構件24a讓晶圓10成為被框架F所保持的狀態。以此方式進行，若已透過保護構件24a讓晶圓10成為被框架F所保持的狀態，則將其搬送至適當之未圖示的雷射加工裝置、切割裝置等並實施分割加工等步驟。即使根據此種實施方式而不使用黏著膠等材料，也能夠藉由作為黏著膠膜而作用的保護構件24a來保護晶圓10的背面10b及良好地實施分割步驟。接著將晶圓10分割成各個元件晶片後，即使一個個拾取元件晶片也沒有黏著膠等的一部分附著在元件晶片之背面的情形，解決了元件晶片品質下降的問題。If the sheet crimping step is completed as described above, the roller cutter 52 is used as shown in FIG. 9(b) to cut the protection member 24 into a circle along the line L on the frame F, leaving it trimmed into The circular protective member 24a removes the remaining outer peripheral portion (sheet cutting step). FIG. 9(c) shows the state in which the wafer 10 supported by the frame F is turned over and the front surface 10a of the wafer 10 is exposed upward after the sheet cutting step is completed, and is used as an adhesive in a manner understandable from the drawings. The protective member 24a acting as an adhesive film adheres the back surface 10b of the wafer 10 and the frame F, and the wafer 10 is held by the frame F through the protective member 24a. In this way, if the wafer 10 has been held by the frame F through the protective member 24a, it is transported to an appropriate laser processing apparatus, dicing apparatus, etc. (not shown) to perform steps such as division processing. Even if the material such as adhesive is not used according to this embodiment, it is possible to protect the back surface 10b of the wafer 10 by the protective member 24a functioning as an adhesive film and perform the division step satisfactorily. Then, after the wafer 10 is divided into individual element chips, even if the element chips are picked up one by one, no part of the adhesive or the like is attached to the back surface of the element chip, which solves the problem of degradation of the element chip quality.

在上述的實施方式中，雖然選擇聚乙烯薄片作為保護構件之基材的薄片20，但並不限定於此，可以從聚烯烴類的薄片或聚酯類的薄片來做適當選擇。選擇自聚烯烴類的薄片之情況下，可以選擇上述聚乙烯薄片的其他種類，例如聚丙烯薄片或聚苯乙烯薄片。此外，選擇自聚酯類薄片的情況下，例如可以選擇自聚對苯二甲酸乙二酯薄片、聚萘二甲酸乙二醇酯薄片。In the above-mentioned embodiment, although the polyethylene sheet is selected as the sheet 20 of the base material of the protective member, it is not limited thereto, and can be appropriately selected from a polyolefin-based sheet or a polyester-based sheet. When selected from polyolefin-based sheets, other types of the above-mentioned polyethylene sheets may be selected, such as polypropylene sheets or polystyrene sheets. In addition, when selecting from a polyester-based sheet, for example, a polyethylene terephthalate sheet or a polyethylene naphthalate sheet can be selected.

作為上述保護構件之基材的薄片20，在選擇聚乙烯薄片以外之薄片的情況下，為了不使薄片20自身熔融，且賦予黏著力的溫度也會根據薄片的材質而不相同，此時要根據選擇的薄片調整在黏著力生成步驟中之加熱薄片20時的目標溫度。例如，選擇熔融溫度在160～180℃的聚丙烯薄片作為薄片20的情況下，加熱薄片20以使其成為130～150℃的程度。此外，選擇熔融溫度在220～240℃的聚苯乙烯薄片作為薄片20的情況下，加熱薄片20以使其成為190～210℃的程度。同樣地，選擇熔融溫度在250～270℃的聚對苯二甲酸乙二酯薄片作為薄片20的情況下，可以加熱薄片20以使其達到220～240℃的程度；選擇熔融溫度在160～180℃的聚萘二甲酸乙二醇酯薄片作為薄片20的情況下，可以加熱薄片20以使其成為130～150℃的程度。如上述方式，因為作為保護構件之基材的薄片20根據各產品而有不同之生成適當黏著力的溫度，所以在黏著力生成步驟中，加熱薄片時的目標溫度較佳為考慮實際選擇之薄片的熔融溫度，同時藉由實驗而決定適當地生成黏著力之溫度。As the sheet 20 used as the base material of the protective member, when a sheet other than the polyethylene sheet is selected, in order not to melt the sheet 20 itself, and the temperature at which the adhesive force is given will also differ depending on the material of the sheet, in this case The target temperature when the sheet 20 is heated in the adhesive force generation step is adjusted according to the selected sheet. For example, when a polypropylene sheet having a melting temperature of 160 to 180°C is selected as the sheet 20, the sheet 20 is heated so as to be about 130 to 150°C. In addition, when a polystyrene sheet having a melting temperature of 220 to 240°C is selected as the sheet 20, the sheet 20 is heated so as to be about 190 to 210°C. Similarly, when a polyethylene terephthalate sheet having a melting temperature of 250 to 270°C is selected as the sheet 20, the sheet 20 can be heated to a degree of 220 to 240°C; the melting temperature is selected to be 160 to 180 When a polyethylene naphthalate sheet at 0° C. is used as the sheet 20, the sheet 20 may be heated to a temperature of about 130 to 150°C. As described above, since the sheet 20 as the base material of the protective member has a temperature at which an appropriate adhesive force is generated according to each product, in the adhesive force generation step, the target temperature when heating the sheet is preferably a sheet considering actual selection The melting temperature is determined by experiment to determine the temperature at which the adhesion is properly generated.

上述的實施方式中，對薄片20之預定區域實施黏著力生成步驟並形成保護構件區域22，在形成保護構件區域22後，實施薄片壓接步驟及薄片切斷步驟，說明了沿著晶圓10的形狀切割作為保護構件22a的區域且將其配設在晶圓10上的步驟，並說明了藉由適當地重複這些步驟而對多個晶圓10配設保護構件22a的內容。但是本發明並不限定於此，例如也可以將捲繞在薄片滾輪20A之薄片20拉出並捲繞於中心軸A2，且同時從薄片20的起始端到末端連續實施根據圖2所說明之黏著力生成步驟。雖然藉由加熱薄片20所賦予的黏著力在溫度下降後也能維持，但因為在薄片20的上表面20a上實施了凹凸加工（咬花加工），所以捲繞已被賦予黏著力後的薄片20也不會有薄片20之重疊部分彼此黏住的情形。以此方式預先對薄片20全體賦予黏著力，藉此能夠連續實施對晶圓10壓接保護構件22a的薄片壓接步驟，而沒有中間卡著黏著力生成步驟的情形。In the above-described embodiment, a predetermined region of the sheet 20 is subjected to an adhesive force generation step and the protective member region 22 is formed. After the protective member region 22 is formed, a sheet crimping step and a sheet cutting step are performed. The shape is cut as a region of the protection member 22a and is arranged on the wafer 10, and the content of the protection member 22a on the plurality of wafers 10 is described by appropriately repeating these steps. However, the present invention is not limited to this. For example, the sheet 20 wound around the sheet roller 20A may be pulled out and wound around the central axis A2, and at the same time, the sheet 20 is continuously implemented from the beginning to the end according to the description of FIG. 2 Adhesion generation step. Although the adhesive force imparted by heating the sheet 20 can be maintained even after the temperature is lowered, since the uneven surface processing (biting process) is performed on the upper surface 20a of the sheet 20, the sheet after the adhesive force is applied is wound There is no case where the overlapping parts of the sheets 20 stick to each other. In this way, the adhesive force is applied to the entire sheet 20 in advance, whereby the sheet crimping step of crimping the protective member 22a to the wafer 10 can be continuously performed without the intermediary interlayer adhesive force generating step.

10‧‧‧晶圓 12‧‧‧元件 14‧‧‧分割預定線 20‧‧‧薄片 20A‧‧‧薄片滾輪 22‧‧‧保護構件區域 22A‧‧‧保護構件 24‧‧‧保護構件 30‧‧‧加熱手段 32‧‧‧加熱器本體部 34‧‧‧噴射部 40‧‧‧保持台 52‧‧‧滾輪切割器 60‧‧‧研削裝置 70‧‧‧研削手段10‧‧‧ Wafer 12‧‧‧ Components 14‧‧‧schedule 20‧‧‧ slice 20A‧‧‧Slice roller 22‧‧‧Protection component area 22A‧‧‧Protection member 24‧‧‧Protection member 30‧‧‧Heating means 32‧‧‧Body of heater 34‧‧‧Jet 40‧‧‧Retainer 52‧‧‧roller cutter 60‧‧‧ Grinding device 70‧‧‧ Grinding method

圖1是作為保護構件之基材的薄片的整體立體圖。 圖2是表示對圖1所示之薄片實施黏著力生成步驟之態樣的立體圖。 圖3是表示準備應用保護構件之晶圓的步驟的立體圖。 圖4是表示薄片壓接步驟之準備狀態的立體圖。 圖5是表示薄片壓接步驟之實施態樣的立體圖。 圖6是表示在圖5所示之薄片壓接步驟之後，切割保護構件之態樣的立體圖。 圖7是表示將已黏貼保護構件的晶圓搬入研削裝置之狀態的立體圖。 圖8是表示研削圖7所示之晶圓背面的步驟之實施態樣的立體圖。 圖9是表示本發明其他實施方式的圖，圖9（a）是表示薄片壓接步驟之其他實施方式的立體圖，圖9（b）是表示薄片切斷步驟之其他實施態樣的立體圖，圖9（c）是表示晶圓經過（b）所示之薄片切斷步驟並透過黏著膠片支撐於框架之狀態的立體圖。FIG. 1 is an overall perspective view of a sheet as a base material of a protective member. FIG. 2 is a perspective view showing how the sheet shown in FIG. 1 is subjected to an adhesion generating step. Fig. 3 is a perspective view showing a step of preparing a wafer to which a protective member is applied. Fig. 4 is a perspective view showing a preparation state of a sheet crimping step. Fig. 5 is a perspective view showing an embodiment of the sheet crimping step. FIG. 6 is a perspective view showing a state where the protective member is cut after the sheet crimping step shown in FIG. 5. 7 is a perspective view showing a state in which a wafer to which a protective member has been stuck is carried into a grinding device. FIG. 8 is a perspective view showing an embodiment of the step of grinding the back surface of the wafer shown in FIG. 7. 9 is a view showing another embodiment of the present invention, FIG. 9 (a) is a perspective view showing another embodiment of the sheet crimping step, and FIG. 9 (b) is a perspective view showing another embodiment of the sheet cutting step. 9(c) is a perspective view showing a state where the wafer has passed through the sheet cutting step shown in (b) and is supported by the frame through the adhesive film.

20‧‧‧薄片 20‧‧‧ slice

20A‧‧‧保護構件 20A‧‧‧Protection member

20a‧‧‧薄片正面 20a‧‧‧Slice front

20b‧‧‧薄片背面 20b‧‧‧Back of the sheet

22‧‧‧保護構件區域 22‧‧‧Protection component area

30‧‧‧加熱手段 30‧‧‧Heating means

32‧‧‧加熱器本體部 32‧‧‧Body of heater

34‧‧‧噴射部 34‧‧‧Jet

34a‧‧‧噴射口 34a‧‧‧jet

A1‧‧‧中心軸 A1‧‧‧Central axis

A2‧‧‧中心軸 A2‧‧‧Central axis

W‧‧‧熱風 W‧‧‧Hot air

Claims (5)

一種晶圓保護方法，其在晶圓表面配設片狀的保護構件並保護晶圓，該晶圓的保護方法至少由以下步驟所構成： 薄片準備步驟，準備作為保護構件之基材的聚烯烴類的薄片或聚酯類的薄片； 黏著力生成步驟，加熱該薄片的表面並生成黏著力；以及 薄片壓接步驟，將已生成黏著力的薄片表面鋪設在要保護之晶圓表面，並賦予推壓力且將薄片壓接至晶圓表面。A wafer protection method, which is provided with a sheet-shaped protection member on the surface of a wafer and protects the wafer. The protection method of the wafer is composed of at least the following steps: The sheet preparation step is to prepare a polyolefin-based sheet or a polyester-based sheet as the base material of the protective member; The step of generating adhesive force, heating the surface of the sheet and generating adhesive force; and In the wafer crimping step, the surface of the wafer that has generated adhesive force is laid on the surface of the wafer to be protected, and pushing force is applied and the wafer is crimped to the surface of the wafer. 如申請專利範圍第1項所述之晶圓保護方法，其中，該黏著力生成步驟中，噴射來自加熱手段的熱風且吹附至薄片的表面，並加熱至不使薄片自身熔融且能賦予黏著力的溫度而於該薄片上生成黏著力。The wafer protection method as described in item 1 of the patent application range, wherein in the adhesion generation step, hot air from the heating means is sprayed and blown onto the surface of the sheet, and heated so as not to melt the sheet itself and impart adhesion The temperature of the force generates adhesive force on the sheet. 一種片狀保護構件，其為加熱聚烯烴類的薄片或聚酯類的薄片的表面而生成黏著力的保護構件。A sheet-shaped protective member is a protective member that heats the surface of a polyolefin-based sheet or a polyester-based sheet to generate adhesive force. 一種片狀保護構件的生成方法，至少由以下步驟所構成： 薄片準備步驟，準備作為保護構件之聚烯烴類的薄片或聚酯類的薄片；以及 黏著力生成步驟，加熱該薄片的表面並生成黏著力。A method for generating a sheet-shaped protective member consists of at least the following steps: A sheet preparation step to prepare a polyolefin sheet or polyester sheet as a protective member; and In the adhesion generation step, the surface of the sheet is heated and adhesion is generated. 如申請專利範圍第4項所述之片狀保護構件的生成方法，其中，該黏著力生成步驟中，噴射來自加熱手段的熱風且吹附至薄片的表面，並加熱至比薄片自身熔融溫度還低且能賦予黏著力的溫度而於該薄片上生成黏著力。The method for generating a sheet-shaped protective member as described in item 4 of the patent application range, wherein in this adhesive force generation step, hot air from the heating means is sprayed and blown onto the surface of the sheet, and heated to a temperature higher than the melting temperature of the sheet itself The temperature which is low and can give adhesive force generates adhesive force on the sheet.
TW108129810A 2018-08-24 2019-08-21 Method for protecting wafer, protective member and method for producing protective member which can prevent the quality degradation of a wafer TW202010008A (en)

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