TW202006852A - Bonding structure and bonding method - Google Patents

Abstract

A bonding structure including a bonding layer and a first protective layer is provided. The bonding layer has a plurality of holes. The first protective layer is disposed on a side of the bonding layer and covers the holes. The first protective layer is adapted to contact a vacuum absorption device, such that the bonding structure is vacuum-absorbed. The bonding layer is adapted to be bonded to at least one wafer. A bonding method is also provided.

Description

Laminating structure and laminating method

The invention relates to a bonding structure and a processing method, and in particular to a bonding structure and a bonding method for bonding wafers.

In the process of attaching the dry film to the wafer, the surface of the dry film (Dry Film) is covered with many tiny holes, so it cannot be vacuum adsorbed tightly on the jig, making it easy between the dry film and the jig There is an offset problem, which results in poor yield. In addition, since the dry film cannot be vacuum-adhered tightly to the jig as described above, the release film on the dry film is difficult to tear off smoothly.

The invention provides a bonding structure and a bonding method, which can improve the bonding yield between the bonding film and the wafer.

The bonding structure of the present invention includes a bonding film and a first protective film. The laminating film has multiple holes. The first protective film is disposed on one side of the bonding film and covers the hole. The first protective film is suitable for contacting a vacuum adsorption device so that the bonded structure is vacuum adsorbed. The bonding film is suitable for bonding to at least one wafer.

In an embodiment of the present invention, the aforementioned bonding structure includes a first release film, wherein the first release film is disposed on the bonding film, and the first protective film is glued to the first release film.

In an embodiment of the present invention, the aforementioned bonding structure further includes an acrylic adhesive layer, wherein the first protective film is adhered to the first release film by the acrylic adhesive layer.

In an embodiment of the invention, the release force between the first protective film and the first release film is less than 10 grams/inch.

In an embodiment of the invention, the material of the first protective film includes polyethylene terephthalate.

In an embodiment of the invention, the aforementioned bonding structure further includes a second protective film, wherein the second protective film is disposed on the other side of the bonding film.

In an embodiment of the present invention, the aforementioned bonding structure further includes a second release film, wherein the second release film is disposed on the bonding film, and the second protective film is glued to the second release film.

The bonding method of the present invention includes the following steps. A bonding structure is provided. The bonding structure includes a bonding film and a first protective film. The bonding film has a plurality of holes. The first protective film is disposed on one side of the bonding film and covers the holes. The first protective film is contacted with a vacuum adsorption device to cause the bonded structure to be vacuum adsorbed. The bonding film is bonded to at least one wafer.

In an embodiment of the present invention, the aforementioned bonding structure further includes a first release film, a second release film, and a second protective film. The first release film and the second release film are respectively disposed on opposite sides of the bonding film. The first protective film and the second protective film are respectively glued to the first release film and the second release film. The fitting method includes the following steps. After the bonding structure is vacuum adsorbed, the second protective film and the second release film are sequentially removed to expose a first bonding surface of the bonding film. The wafer is bonded to the exposed first bonding surface. After bonding the wafer to the first bonding surface, the first protective film and the first release film are sequentially removed to expose a second bonding surface of the bonding film. Attach another wafer to the exposed second bonding surface.

In an embodiment of the invention, the above bonding method includes the following steps. After bonding the wafer to the exposed first bonding surface, the wafer is brought into contact with the vacuum suction device to cause the wafer and the bonding structure to be vacuum-adsorbed.

Based on the above, the present invention covers the holes of the bonding film with the first protective film, so that the bonding structure will not be difficult to be vacuum absorbed due to the holes. In this way, the vacuum suction device can effectively vacuum suction the bonding structure, so that the bonding film has a better bonding yield when being bonded to the wafer.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

FIG. 1 is a schematic cross-sectional view of a bonding structure according to an embodiment of the invention. FIG. 2 is a partial schematic view of the bonding film of FIG. 1. Please refer to FIGS. 1 and 2. The bonding structure 100 of this embodiment includes a bonding film 110 and a first protective film 120. The bonding film 110 is, for example, a dry film and has a plurality of tiny holes 112, and the hole diameter of each hole 112 is, for example but not limited to, 1.8 mm. The first protective film 120 is disposed on one side of the bonding film 110 and covers the holes 112. The first protective film 120 is suitable for contacting a vacuum adsorption device to establish a vacuum between the first protective film 120 and the vacuum adsorption device, so that the bonding structure 100 is vacuum adsorbed.

As described above, the first protective film 120 is used to cover the holes 112 of the bonding film 110 so that the bonding structure 100 will not be difficult to be vacuum sucked by the holes 112. In this way, the vacuum suction device can effectively vacuum suction the bonding structure 100, so that the bonding film 110 has a better bonding yield when being bonded to the wafer.

In the following, the embodiment shown in FIG. 1 is used to describe the bonding method of the present invention. 3 is a flowchart of a bonding method corresponding to the bonding structure of FIG. 1. Please refer to FIGS. 1 and 3. First, a bonding structure 100 is provided, which includes a bonding film 110 and a first protective film 120. The bonding film has a plurality of holes 112. The first protective film 120 is disposed on the bonding film 110. One side covers these holes 112 (step S02). Next, the first protective film 110 is brought into contact with the vacuum suction device to cause the bonded structure 100 to be vacuum suctioned (step S04). The bonding film 110 is bonded to a wafer (step S06).

In detail, the bonding structure 100 of this embodiment further includes a second protective film 130, a first release film 140, and a second release film 150. The first release film 140 and the second release film 150 are respectively disposed on opposite surfaces of the bonding film 110, and the first protective film 120 is glued to the first release film 140 to be disposed on one of the bonding films 110 as described above On the side, the second protective film 130 is glued to the second release film 150 to be disposed on the other side of the bonding film 110. The first release film 140 and the second release film 150 have holes 142 and holes 152, respectively. The holes 112, 142, and 152 are formed at the same time during the manufacturing process of the bonding structure 100, for example.

FIG. 3 is only a schematic flow of the bonding method of this embodiment, and the following will be described in more detail by the drawings. 4A to 4G illustrate detailed steps of the bonding method corresponding to the bonding structure of FIG. 1. After the bonding structure 100 is vacuum adsorbed by the vacuum adsorption device 60 (shown in FIG. 4A) as shown in step S02 of FIG. 3, the second protective film 130 and the second release film 150 are sequentially removed as shown in FIG. 4B A first bonding surface 114 of the bonding film 110 is exposed. It should be noted that, by covering the holes 112 on the bonding film 110 with the first protective film 120 that is not opened, in addition to being able to prevent the bonding structure 100 from being difficult to be vacuum-absorbed by the holes 112 as described above, it can also be Effective vacuum absorption makes the second protective film 130 and the second release film 150 easier to tear, and will not break the vacuum or cause the first in the process of tearing the second protective film 130 and the second release film 150 The release film 140 peels off.

As shown in FIG. 4C, the wafer 50 is bonded to the exposed first bonding surface 114. Next, the vacuum suction device 60 is removed from the first protective film 120, and the wafer 50 bonded to the first bonding surface 114 is brought into contact with the vacuum suction device 60 as shown in FIG. The combined structure 100 is adsorbed by the vacuum adsorption device 60 together. Afterwards, after the wafer 50 and the bonding structure 100 are vacuum-sucked and fixed by the vacuum suction device 60, the first protective film 120 and the first release film 140 are sequentially removed to expose the bonding film 110 as shown in FIG. 4E的一第一贴面面116。 A second fitting surface 116. As shown in FIG. 4F, another wafer 50 is bonded to the exposed second bonding surface 116. Finally, the bonding film 110 and the two wafers 50 bonded to the bonding film 110 are removed from the vacuum suction device 60 to complete the wafer stacking structure shown in FIG. 4G. In other embodiments, a similar bonding process may be used to stack a larger number of wafers with each other, which is not limited by the present invention.

In this embodiment, the material of the first protective film 120 may be polyethylene terephthalate (PET), and the first protective film 120 may be glued to the first release film 140 through the acrylic adhesive layer 160. Thereby, the first protective film 120 and the first release film 140 have a small release force (for example, less than 10 g/inch) to avoid the release force during the process of tearing off the first protective film 120 If it is too large, the bonding film 110 is deformed, and it is possible to avoid the residual glue after the first protective film 120 is removed.

The following examples illustrate the thickness of each layer of the bonding structure 100 of this embodiment. The thickness of the bonding film 110 is 0.04 mm, the thickness of the first protective film 120 is 0.075 mm, the thickness of the second protective film 130 is 0.05 mm, and the thickness of the first release film 140 is 0.1 mm, the second The thickness of the release film 150 is 0.05 mm, and the thickness of the acrylic adhesive layer 160 is 0.01 mm. In other embodiments, the thickness of each layer can be changed according to requirements, and the present invention does not limit this.

In summary, the present invention uses the first protective film to cover the holes of the bonding film, so that the bonding structure will not be difficult to be vacuum adsorbed due to the holes. In this way, the vacuum suction device can effectively vacuum suction the bonding structure, so that the bonding film has a better bonding yield when being bonded to the wafer.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

50‧‧‧ Wafer 60‧‧‧ Vacuum adsorption device 100‧‧‧ Lamination structure 110‧‧‧ Lamination film 112, 142, 152‧‧‧ Hole 114‧‧‧First lamination surface 116‧‧‧ Second bonding surface 120‧‧‧ First protective film 130‧‧‧ Second protective film 140‧‧‧ First release film 150‧‧‧ Second release film 160‧‧‧ Acrylic adhesive layer

FIG. 1 is a schematic cross-sectional view of a bonding structure according to an embodiment of the invention. FIG. 2 is a partial schematic view of the bonding film of FIG. 1. 3 is a flowchart of a bonding method corresponding to the bonding structure of FIG. 1. 4A to 4G are schematic diagrams of the steps of attaching the bonding structure of FIG. 1 to a wafer.

100‧‧‧Fit structure

110‧‧‧ Laminating film

112, 142, 152‧‧‧ hole

114‧‧‧First fitting surface

116‧‧‧Second fitting surface

120‧‧‧First protective film

130‧‧‧Second protective film

140‧‧‧First release film

150‧‧‧Second release film

160‧‧‧Acrylic layer

Claims (10)

A bonding structure includes: a bonding film having a plurality of holes; and a first protective film disposed on one side of the bonding film and covering the holes, wherein the first protective film is suitable for contacting a vacuum The adsorption device causes the bonding structure to be vacuum-absorbed, and the bonding film is suitable for bonding to at least one wafer. The bonding structure as described in item 1 of the patent application scope includes a first release film, wherein the first release film is disposed on the bonding film, and the first protective film is glued to the first release film . The bonding structure as described in item 2 of the patent application scope further includes an acrylic adhesive layer, wherein the first protective film is bonded to the first release film by the acrylic adhesive layer. The bonding structure as described in item 2 of the patent application scope, wherein the release force between the first protective film and the first release film is less than 10 g/inch. The bonding structure as described in item 1 of the patent application scope, wherein the material of the first protective film includes polyethylene terephthalate. The bonding structure as described in item 1 of the scope of the patent application further includes a second protective film, wherein the second protective film is disposed on the other side of the bonding film. The bonding structure as described in item 6 of the patent application scope further includes a second release film, wherein the second release film is disposed on the bonding film, and the second protective film is glued to the second release film membrane. A laminating method includes: providing a laminating structure, the laminating structure includes a laminating film and a first protective film, the laminating film has a plurality of holes, and the first protective film is disposed on the laminating film Covering the holes on one side; contacting the first protective film with a vacuum suction device to cause the bonding structure to be vacuum suctioned; and bonding the bonding film to at least one wafer. The bonding method as described in item 8 of the patent application scope, wherein the bonding structure further includes a first release film, a second release film and a second protective film, the first release film and the first The two release films are respectively disposed on opposite sides of the bonding film, and the first protective film and the second protective film are respectively glued to the first release film and the second release film. The method includes: After the bonding structure is vacuum adsorbed, the second protective film and the second release film are sequentially removed to expose a first bonding surface of the bonding film; the wafer is bonded to the exposed first A bonding surface; after bonding the wafer to the first bonding surface, sequentially removing the first protective film and the first release film to expose a second bonding surface of the bonding film And attaching the other wafer to the exposed second bonding surface. The bonding method as described in item 9 of the patent application scope includes: after bonding the wafer to the exposed first bonding surface, contacting the wafer with the vacuum adsorption device to cause the wafer and The bonded structure is vacuum-absorbed.

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