TW202003889A - Plasma treatment device - Google Patents

Abstract

A plasma treatment device, comprising: a balun that has a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; a first electrode that is placed in the vacuum container and is electrically connected to the first balanced terminal; a second electrode that is placed so as to face opposite the first electrode in the vacuum container, and is electrically connected to the second balanced terminal; and a substrate-holding unit that holds a substrate in the vacuum container so that the substrate faces the space between the first electrode and the second electrode.

Description

Plasma treatment device

The invention relates to a plasma processing device.

There is a plasma processing device that generates plasma by applying high frequency between two electrodes, and processes a substrate by the plasma. Such a plasma processing apparatus can operate as a sputtering apparatus or as an etching apparatus based on the area ratio and/or bias of two electrodes. The plasma processing apparatus configured as a sputtering apparatus includes: a first electrode holding a target, and a second electrode holding a substrate, a high frequency is applied between the first electrode and the second electrode, and the first electrode and the second electrode Plasma is generated between the electrodes (between the target and the substrate). By generating plasma, a self-bias voltage is generated on the surface of the target, whereby ions will collide with the target, and particles of the material constituting this will be released from the target.

Patent Document 1 describes a sputtering device including a grounded chamber, a target electrode connected to an RF generation source through an impedance matching circuit network, and a substrate holding electrode grounded through a substrate electrode tuning circuit.

In the sputtering apparatus described in Patent Document 1, in addition to the substrate holding electrode, the chamber can function as an anode. The self-bias voltage varies depending on the state of the part that can function as the cathode and the state of the part that can function as the anode. Therefore, in addition to the substrate holding electrode, when the chamber also functions as an anode, the self-bias voltage also changes depending on the state of the portion of the chamber that functions as the anode. The change of the self-bias voltage will bring about the change of the plasma potential, and the change of the plasma potential will affect the characteristics of the formed film.

If a film is formed on the substrate by a sputtering device, a film is also formed on the inner surface of the chamber. As a result, the state of the portion of the chamber that can function as an anode changes. Therefore, if the sputtering device continues to be used, the self-bias voltage will change according to the film formed on the inner surface of the chamber, and the plasma potential will also change. Therefore, in the case where a sputtering apparatus has been used for a long time in the past, it is difficult to maintain the characteristics of the film formed on the substrate to be constant.

Similarly, when the etching apparatus is used for a long period of time, the self-bias voltage will vary depending on the film formed on the inner surface of the chamber, and the plasma potential will also change, making it difficult to maintain the etching characteristics of the substrate to a certain level. . [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 55-35465

The present invention is based on the above-mentioned problems to recognize the developers and provide a technique that is advantageous for stabilizing the plasma potential during long-term use.

A first aspect of the present invention relates to a plasma processing device. The plasma processing device includes: Balun with first unbalanced terminal, second unbalanced terminal, first balanced terminal and second balanced terminal; Grounded vacuum container; A first electrode disposed in the vacuum container and electrically connected to the first balanced terminal; A second electrode arranged in the vacuum vessel to face the first electrode and electrically connected to the second balanced terminal; and The substrate holding portion that holds the substrate in the vacuum container so that the substrate faces the space between the first electrode and the second electrode.

Hereinafter, the present invention will be described with reference to the accompanying drawings through exemplary embodiments thereof.

FIG. 1 schematically shows the configuration of the plasma processing apparatus 1 according to the first embodiment of the present invention. The plasma processing apparatus of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balanced unbalanced conversion circuit) 103, a vacuum container 110, a first electrode 106, and a second electrode 111. Or, it may be understood that the plasma processing apparatus 1 includes a balun 103 and a body 10, and the body 10 includes a vacuum container 110, a first electrode 106, and a second electrode 111. The body 10 has a first terminal 251 and a second terminal 252. The first electrode 106 may be arranged to separate the vacuum space and the external space together with the vacuum vessel 110 (that is, constitute a part of the vacuum partition), or may be arranged in the vacuum vessel 110. The second electrode 111 may be arranged to separate the vacuum space and the external space together with the vacuum vessel 110 (that is, form a part of the vacuum partition), or may be arranged in the vacuum vessel 110.

The balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103 . The vacuum container 110 is composed of a conductor and is grounded.

In the first embodiment, the first electrode 106 is a cathode, and holds the target 109. The target 109 is, for example, an insulator material or a conductor material. Furthermore, in the first embodiment, the second electrode 111 is an anode, and holds the substrate 112. The plasma processing apparatus 1 of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering of the target 109. The first electrode 106 is electrically connected to the first balanced terminal 211, and the second electrode 111 is electrically connected to the second balanced terminal 212. The first electrode 106 and the first balanced terminal 211 are electrically connected to mean that a current can flow between the first electrode 106 and the first balanced terminal 211, and the first electrode 106 and the first balanced terminal 211 are configured between There is a current path. Similarly, in this specification, a and b are electrically connected to mean that a current path is formed between a and b in such a way that current can flow between a and b.

The above configuration can also be understood as that the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211, The second terminal 252 is electrically connected to the second balanced terminal 212.

In the first embodiment, the first electrode 106 and the first balanced terminal 211 (first terminal 251) are electrically connected via the blocking capacitor 104. The blocking capacitor 104 blocks the direct current between the first balanced terminal 211 and the first electrode 106 (or between the first balanced terminal 211 and the second balanced terminal 212). Instead of the blocking capacitor 104, the impedance matching circuit 102 described below blocks the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202. The first electrode 106 can be supported by the vacuum container 110 via the insulator 107. The second electrode 111 may be supported by the vacuum container 110 via the insulator 108. Or, an insulator 108 may be arranged between the second electrode 111 and the vacuum container 110.

The plasma processing apparatus 1 may further include a high-frequency power source 101 and an impedance matching circuit 102 disposed between the high-frequency power source 101 and the balun 103. The high-frequency power supply 101 supplies high-frequency (high-frequency current, high-frequency voltage, high-frequency power) via the impedance matching circuit 102 between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103. In other words, the high-frequency power supply 101 supplies high-frequency (high-frequency current, high-frequency voltage, and high-frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. Or, it can be understood that the high-frequency power supply 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the impedance matching circuit 102 and the balun 103.

In the internal space of the vacuum container 110, a gas (for example, Ar, Kr, or Xe gas) is supplied via a gas supply unit (not shown) provided in the vacuum container 110. In addition, between the first electrode 106 and the second electrode 111, the high frequency power is supplied by the high frequency power source 101 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104. As a result, plasma is generated between the first electrode 106 and the second electrode 111, and a self-bias voltage is generated on the surface of the target 109. The ions in the plasma collide with the surface of the target 109 and are emitted from the target 109 Particles of the material that constitutes that. Then, a film is formed on the substrate 112 by using the particles.

FIG. 2A shows a configuration example of the balun 103. The balun 103 shown in FIG. 2A includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 that connects the second unbalanced terminal 202 and the second balanced terminal 212. The first coil 221 and the second coil 222 are the same number of coils and share an iron core.

FIG. 2B shows another configuration example of the balun 103. The balun 103 shown in FIG. 2B includes a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 connecting the second unbalanced terminal 202 and the second balanced terminal 212 . The first coil 221 and the second coil 222 are the same number of coils and share an iron core. In addition, the balun 103 shown in FIG. 2B further includes the third coil 223 and the fourth coil 224, and the third coil 223 and the fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212. It is configured such that the voltage of the connection node 213 of the third coil 223 and the fourth coil 224 is the midpoint between the voltage of the first balanced terminal 211 and the voltage of the second balanced terminal 212. The third coil 223 and the fourth coil 224 are the same number of coils and share an iron core. The connection node 213 can also be grounded, connected to the vacuum container 110, or floated.

3, the function of the balun 103 will be described. Let the current flowing through the first unbalanced terminal 201 be I1, the current flowing through the first balanced terminal 211 be I2, the current flowing through the second unbalanced terminal 202 be I2', and the current I2 flow The current to ground is set to I3. I3=0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit to ground is optimal. I3=I2, that is, when all the current I2 flowing through the first balanced terminal 211 flows to the ground, the isolation performance of the balanced circuit from the ground is the worst. The index ISO indicating the degree of such isolation performance can be given by the following formula. Under this definition, the absolute value of ISO is larger and the isolation performance is better. ISO[dB]=20log(I3/I2’)

In FIG. 3, Rp-jXp indicates that the first electrode 106 and the second electrode 111 are viewed from the sides of the first balanced terminal 211 and the second balanced terminal 212 in a state where plasma is generated in the internal space of the vacuum container 110 Impedance (including the reactance blocking the capacitor 104) at the side (the side of the body 10). Rp represents the resistance component, and -Xp represents the reactance component. In addition, in FIG. 3, X is a reactance component (inductance component) indicating the impedance of the first coil 221 of the balun 103. ISO is relevant for X/Rp.

Fig. 4 shows an example of the relationship between the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The present inventors found that the configuration in which high frequency power is supplied from the high-frequency power source 101 to the first electrode 106 and the second electrode 111 via the balun 103. In particular, in this configuration, 1.5≦X/Rp≦5000 is advantageous for The potential of the plasma (plasma potential) formed in the internal space of the vacuum container 110 (the space between the first electrode 106 and the second electrode 111) is insensitive to the state of the inner surface of the vacuum container 110. Here, the plasma potential has a dull effect on the state of the inner surface of the vacuum container 110, which means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 is equivalent to -10.0dB≧ISO≧-80dB.

5A to 5D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5≦X/Rp≦5000. FIG. 5A is a diagram showing the plasma potential and the cathode potential in a state where no film is formed on the inner surface of the vacuum container 110. FIG. 5B is a diagram showing the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. 5C is a diagram showing the plasma potential and the cathode potential in the state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 5D is a diagram showing the plasma potential and the cathode potential in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. As can be understood from FIGS. 5A to 5D, conforming to 1.5≦X/Rp≦5000 is advantageous for stabilizing the plasma potential in various states for the inner surface of the vacuum container 110.

6A to 6D show the results of the simulation of the plasma potential and the potential of the first electrode 106 (cathode potential) when 1.5≦X/Rp≦5000. 6A is a diagram showing the plasma potential and the cathode potential in a state where no film is formed on the inner surface of the vacuum container 110. FIG. 6B is a diagram showing the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. 6C is a diagram showing the plasma potential and the cathode potential in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. 6D is a plasma potential and a cathode potential showing a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. FIG. It can be understood from FIGS. 6A to 6D that when 1.5≦X/Rp≦5000 is not met, the plasma potential will vary according to the state of the inner surface of the vacuum container 110.

Here, in both the case of X/Rp>5000 (for example, X/Rp=∞) and the case of X/Rp<1.5 (for example, X/Rp=1.0, X/Rp=0.5), the plasma potential will easily depend on The state of the inner surface of the vacuum container 110 changes. When X/Rp>5000, a film is not formed on the inner surface of the vacuum container 110, and discharge occurs only between the first electrode 106 and the second electrode 111. However, in the case of X/Rp>5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential will sensitively react to this, resulting in the results shown in the examples shown in FIGS. 6A to 6D. On the other hand, when X/Rp<1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (which is caused by the electrical characteristics of the film formed on the inner surface) The effect of is significant, and the plasma potential will vary depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

Referring to FIG. 7, an example of a determination method of Rp-jXp (the only person who actually wants to know is Rp) is shown. First, the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the body 10. Then, the second terminal 252 (second electrode 111) of the body 10 is grounded. In this state, high-frequency power is supplied from the high-frequency power source 101 to the first terminal 251 of the main body 10 via the impedance matching circuit 102. In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently constituted by the coils L1 and L2 and the variable capacitors VC1 and VC2. The plasma can be generated by adjusting the capacitance values of the variable capacitors VC1 and VC2. In the state where the plasma is stable, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 (the side of the first electrode 106 and the second electrode 111) at the time of plasma generation. The impedance of the impedance matching circuit 102 at this time is Rp+jXp.

Therefore, Rp-jXp can be obtained based on the impedance Rp+jXp of the impedance matching circuit 102 at the time of impedance matching (the actual knowledge is Rp only). Rp-jXp is other, which can be obtained by simulation based on design data, for example.

Based on the Rp thus obtained, X/Rp can be specified. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5≦X/Rp≦5000.

FIG. 8 schematically shows the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. The plasma processing apparatus 1 of the second embodiment is operable as an etching apparatus for etching the substrate 112. In the second embodiment, the first electrode 106 is a cathode and holds the substrate 112. Furthermore, in the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 of the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104. In other words, in the plasma processing apparatus 1 of the second embodiment, the blocking capacitor 104 is arranged in the electrical connection path between the first electrode 106 and the first balanced terminal 211.

FIG. 9 schematically shows the configuration of the plasma processing apparatus 1 according to the third embodiment of the present invention. The plasma processing apparatus 1 of the third embodiment is a modified example of the plasma processing apparatus 1 of the first embodiment, and further includes at least one of a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. In the example shown in FIG. 9, the plasma processing apparatus 1 is a drive mechanism 114 including both a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. Between the vacuum container 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition wall may be provided.

Similarly, the plasma processing apparatus 1 of the second embodiment may further include at least one of a mechanism for raising and lowering the first electrode 106 and a mechanism for rotating the second electrode 106.

FIG. 10 schematically shows the configuration of the plasma processing apparatus 1 according to the fourth embodiment of the present invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the fourth embodiment is that the first to third embodiments can be followed. The plasma processing apparatus 1 includes: a first balun 103, a second balun 303, a vacuum container 110, a first electrode 106 and a second electrode 135 constituting the first group, and a first electrode 141 and a second electrode constituting the second group 2electrode 145. Or, it can also be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 106 and a second electrode constituting the first group 135. The first electrode 141 and the second electrode 145 constituting the second group. The body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and to the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The balance circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and to the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded.

The first electrode 106 of the first group is the holding target 109. The target 109 is, for example, an insulator material or a conductor material. The second electrode 135 of the first group is arranged around the first electrode 106. The first electrode 106 of the first group is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 135 of the first group is the second balanced terminal electrically connected to the first balun 103 212. The first electrode 141 of the second group is the holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is the second balanced terminal electrically connected to the second balun 303 412.

The above configuration is understood that the first electrode 106 of the first group is electrically connected to the first terminal 251, the second electrode 135 of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically The first balanced terminal 211 of the first balun 103 is connected, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is The first balanced terminal 411 of the second balun 303 is electrically connected, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 106 of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the blocking capacitor 104. The blocking capacitor 104 is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 106 of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. Instead of the blocking capacitor 104, the first impedance matching circuit 102 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. The first electrode 106 and the second electrode 135 of the first group can be supported by the vacuum container 110 via the insulator 132.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303) Break DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via the insulator 142.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power supply 101 supplies high-frequency between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103 via the first impedance matching circuit 102. In other words, the first high-frequency power source 101 supplies high-frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103, and the blocking capacitor 104. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 106 and the second electrode 135 of the first group constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the supply of high frequency from the first high-frequency power source 101, in the state where plasma is generated in the internal space of the vacuum vessel 110, the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come The impedance when looking at the side of the first electrode 106 and the second electrode 135 (the side of the body 10) of the first group is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, compliance with 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110.

In addition, with the supply of high frequency from the second high-frequency power supply 301, in the state where plasma is generated in the internal space of the vacuum vessel 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 141 and the second electrode 145 of the second group (side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, compliance with 1.5≦X2/Rp2≦5000 is beneficial to stabilize the potential of the plasma formed in the internal space of the vacuum container 110.

FIG. 11 schematically shows the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. The device 1 of the fifth embodiment is configured to have additional drive mechanisms 114 and 314 compared to the plasma processing device 1 of the fourth embodiment. The drive mechanism 114 may include at least one of a mechanism that raises and lowers the first electrode 141 and a mechanism that rotates the first electrode 141. The drive mechanism 314 can be provided with a mechanism for raising and lowering the second electrode 145.

FIG. 12 schematically shows the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. The plasma processing apparatus of the sixth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. As the matters not mentioned in the sixth embodiment, the first to fifth embodiments can be followed. The plasma processing apparatus 1 of the sixth embodiment includes a plurality of first high-frequency supply units and at least one second high-frequency supply unit. One of the plurality of first high-frequency supply units may include the first electrode 106a, the second electrode 135a, and the first balun 103a. The other one of the plurality of first high-frequency supply units may include the first electrode 106b, the second electrode 135b, and the first balun 103b. Here, an example in which the plural first high-frequency supply units are configured by two high-frequency supply units will be described. In addition, the two high-frequency supply units and their associated components are distinguished from each other by the subscripts a and b. Similarly, the two targets are distinguished from each other by subscripts a and b.

In other viewpoints, the plasma processing apparatus 1 includes: a plurality of first baluns 103a, 103b, a second balun 303, a vacuum container 110, a first electrode 106a and a second electrode 135a, a first electrode 106b, and a second The electrode 135b, the first electrode 141, and the second electrode 145. Or, it may be understood that the plasma processing apparatus 1 includes: a plurality of first baluns 103a, 103b, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 106a, and a second electrode 135a , The first electrode 106b and the second electrode 135b, the first electrode 141 and the second electrode 145. The body 10 includes first terminals 251a, 251b, second terminals 252a, 252b, third terminals 451, and fourth terminals 452.

The first balun 103a has a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a. An unbalanced circuit is connected to the side of the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and to the side of the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a The balance circuit is connected. The first balun 103b has a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b. An unbalanced circuit is connected to the side of the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and to the side of the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b The balance circuit is connected.

The second balun 303 may have the same configuration as the first baluns 103a and 103b. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and to the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded.

The first electrodes 106a and 106b hold the targets 109a and 109b, respectively. The targets 109a, 109b are, for example, insulator materials or electrical conductor materials. The second electrodes 135a and 135b are arranged around the first electrodes 106a and 106b, respectively. The first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first baluns 103a and 103b, respectively, and the second electrodes 135a and 135b are electrically connected to the first baluns 103a and 103b, respectively The second balanced terminals 212a and 212b.

The first electrode 141 is the holding substrate 112. The second electrode 145 is arranged around the first electrode 141. The first electrode 141 is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 is the second balanced terminal 412 electrically connected to the second balun 303.

The above configuration is understood that the first electrodes 106a and 106b are electrically connected to the first terminals 251a and 251b, the second electrodes 135a and 135b are electrically connected to the second terminals 252a and 252b, and the first terminal 251a and 251b is electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, respectively, and the second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b, respectively Composition. In addition, the above configuration is understood that the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrodes 106a, 106b and the first balanced terminals 211a, 211b (first terminals 251a, 251b) of the first baluns 103a, 103b can be electrically connected via blocking capacitors 104a, 104b, respectively. The blocking capacitors 104a, 104b are between the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first electrodes 106a, 106b (or the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first 2 Between balanced terminals 212a and 212b) DC current is interrupted. Instead of blocking capacitors 104a, 104b, the first impedance matching circuits 102a, 102b will block the flow between the first unbalanced terminals 201a, 201b and the second unbalanced terminals 202a, 202b flowing in the first baluns 103a, 103b The way of the DC current is constituted. Alternatively, the blocking capacitors 104a and 104b may be disposed between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (second terminals 252a and 252b) of the first baluns 103a and 103b. The first electrodes 106a and 106b and the second electrodes 135a and 135b can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 blocks the direct current between the first balanced terminal 411 and the first electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Alternatively, the blocking capacitor 304 may be disposed between the second electrode 145 and the second balanced terminal 412 (fourth terminal 452) of the second balun 303. The first electrode 141 and the second electrode 145 can be supported by the vacuum container 110 via the insulator 142.

The plasma processing apparatus 1 may include: a plurality of first high-frequency power sources 101a, 101b, and a first unit disposed between the plurality of first high-frequency power sources 101a, 101b and the plurality of first baluns 103a, 103b, respectively Impedance matching circuits 102a, 102b. The first high-frequency power sources 101a and 101b supply high-frequency to the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b via the first impedance matching circuits 102a and 102b, respectively between. In other words, the first high-frequency power sources 101a and 101b supply high frequencies to the first electrodes 106a, 106b and the second electrode via the first impedance matching circuits 102a and 102b, the first baluns 103a and 103b, and the blocking capacitors 104a and 104b, respectively Between 135a and 135b. Or, the first high-frequency power sources 101a and 101b supply high-frequency to the first terminals 251a and 251b and the second terminals 252a and 252b of the body 10 through the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. between.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.

FIG. 13 schematically shows the configuration of the plasma processing apparatus 1 according to the seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the seventh embodiment is that the first to sixth embodiments can be followed. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 105a and a second electrode 105b that constitute the first group, and a first electrode 141 and a second electrode that constitute the second group 2electrode 145. Or, it may be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode constituting the first group 105b. The first electrode 141 and the second electrode 145 constituting the second group. The body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and to the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The balance circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and to the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded.

The first electrode 105a of the first group holds the first target 109a, and faces the space on the side of the substrate 112 across the first target 109a. The second electrode 105b of the first group is arranged beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 across the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105a of the first group is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105b of the first group is the second balanced terminal electrically connected to the first balun 103 212.

The first electrode 141 of the second group is the holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is the second balanced terminal electrically connected to the second balun 303 412.

The above configuration is understood that the first electrode 105a of the first group is electrically connected to the first terminal 251, the second electrode 105b of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected The first balanced terminal 211 of the first balun 103 is connected, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is The first balanced terminal 411 of the second balun 303 is electrically connected, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the blocking capacitor 104a. The blocking capacitor 104a is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 105a of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. The second electrode 105b of the first group and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the blocking capacitor 104b. The blocking capacitor 104b is shielded between the second balanced terminal 212 of the first balun 103 and the second electrode 105b of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. The first electrode 105a and the second electrode 105b of the first group can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303) Break DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high-frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a, 104b. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 105 a and the second electrode 105 b of the first group constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the supply of high frequency from the first high-frequency power source 101, in the state where plasma is generated in the internal space of the vacuum vessel 110, the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come The impedance when looking at the side of the first electrode 105a and the second electrode 105b of the first group (the side of the body 10) is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, conformity of 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110.

In addition, with the supply of high frequency from the second high-frequency power supply 301, in the state where plasma is generated in the internal space of the vacuum vessel 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 127 and the second electrode 130 of the second group (side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, conformity of 1.5≦X2/Rp2≦5000 is advantageous in order to stabilize the potential of the plasma formed in the internal space of the vacuum container 110.

The plasma processing apparatus 1 of the seventh embodiment may further include at least one of a mechanism for raising and lowering the first electrode 141 constituting the second group and a mechanism for rotating the first electrode 141 constituting the second group. In the example shown in FIG. 13, the plasma processing apparatus 1 is a drive mechanism 114 that includes both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. In addition, in the example shown in FIG. 13, the plasma processing apparatus 1 is provided with a mechanism 314 that raises and lowers the second electrode 145 constituting the second group. Between the vacuum container 110 and the drive mechanisms 114 and 314, a bellows constituting a vacuum partition wall may be provided.

14, the function of the first balun 103 of the plasma processing apparatus 1 of the seventh embodiment shown in FIG. 13 will be described. Let the current flowing through the first unbalanced terminal 201 be I1, the current flowing through the first balanced terminal 211 be I2, the current flowing through the second unbalanced terminal 202 be I2', and the current I2 flow The current to ground is set to I3. I3=0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit to ground is optimal. I3=I2, that is, when all the current I2 flowing through the first balanced terminal 211 flows to the ground, the isolation performance of the balanced circuit from the ground is the worst. The index ISO indicating the degree of such isolation performance is the same as in the first to fifth embodiments, and the following formula can be given. Under this definition, the absolute value of ISO is larger and the isolation performance is better. ISO[dB]=20log(I3/I2’)

In FIG. 14, Rp-jXp (=Rp/2-jXp/2+Rp/2-jXp/2) indicates that in the state where plasma is generated in the internal space of the vacuum container 110, the 2 The impedance of the side of the balanced terminal 212 when looking at the side of the first electrode 105a and the second electrode 105b (the side of the body 10) (including the reactance blocking the capacitors 104a and 104b). Rp represents the resistance component, and -Xp represents the reactance component. In addition, in FIG. 14, X is a reactance component (inductance component) indicating the impedance of the first coil 221 of the first balun 103. ISO is relevant for X/Rp.

FIG. 4 referred to in the description of the first embodiment is an example showing the relationship between the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The relationship of FIG. 4 is also established in the seventh embodiment. The present inventors found that in the seventh embodiment, compliance with 1.5≦X/Rp≦5000 is also advantageous in order to make the internal space formed in the vacuum container 110 (the space between the first electrode 105a and the second electrode 105b) The electric potential of the plasma (plasma potential) is insensitive to the state of the inner surface of the vacuum container 110. Here, the plasma potential has a dull effect on the state of the inner surface of the vacuum container 110, which means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 is equivalent to -10.0dB≧ISO≧-80dB.

15A to 15D show the results of simulating the plasma potential when 1.5≦X/Rp≦5000, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential). 15A is a diagram showing the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110 . 15B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110 . 15C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 15D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in the state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110 ). As can be understood from FIGS. 15A to 15D, compliance with 1.5≦X/Rp≦5000 is beneficial to stabilize the plasma potential of the inner surface of the vacuum container 110 in various states.

16A to 16D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when 1.5≦X/Rp≦5000. FIG. 16A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110 . 16B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. . 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in the state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 16D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110 ). It can be understood from FIGS. 16A to 16D that when 1.5≦X/Rp≦5000 is not satisfied, the plasma potential will change according to the state of the inner surface of the vacuum container 110.

Here, in both the case of X/Rp>5000 (for example, X/Rp=∞) and the case of X/Rp<1.5 (for example, X/Rp=1.16, X/Rp=0.87), the plasma potential will easily depend on The state of the inner surface of the vacuum container 110 changes. When X/Rp>5000, in a state where the film is not formed on the inner surface of the vacuum container 110, discharge occurs only between the first electrode 105a and the second electrode 105b. However, in the case of X/Rp>5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential will sensitively react to this, resulting in the results as exemplified in FIGS. 16A to 16D. On the other hand, when X/Rp<1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (which is caused by the electrical characteristics of the film formed on the inner surface) The effect of is significant, and the plasma potential will vary depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

FIG. 17 schematically shows the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. The plasma processing apparatus 1 of the eighth embodiment is a modification of the plasma processing apparatus 1 of the first or second embodiment, and can operate as an apparatus for processing the substrate 112 by generating plasma P at a position isolated from the substrate 112 . The plasma processing apparatus 1 of the eighth embodiment can be configured to operate as a sputtering apparatus, an etching apparatus, or a CVD apparatus, for example.

The plasma processing apparatus 1 includes a balun (balanced unbalanced conversion circuit) 103, a vacuum container 110, a first electrode 106, a second electrode 111, and a substrate holding portion 511. Or, it may be understood that the plasma processing apparatus 1 includes a balun 103 and a body 10, and the body 10 includes a vacuum container 110, a first electrode 106, a second electrode 111, and a substrate holding portion 511. The body 10 has a first terminal 251 and a second terminal 252.

The balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103 . The vacuum container 110 is composed of a conductor and is grounded.

In the eighth embodiment, the first electrode 106 is a cathode. Furthermore, in the eighth embodiment, the second electrode 111 is an anode. The first electrode 106 is disposed in the vacuum container 110 and is electrically connected to the first balanced terminal 211. The second electrode 111 is arranged to face the first electrode 106 in the vacuum container 110 and is electrically connected to the second balanced terminal 212. By supplying high frequency from the high-frequency power source 101 through the balun 103 to between the first electrode 106 and the second electrode 111, plasma P is generated in the space between the first electrode 106 and the second electrode 111. The substrate holding portion 511 holds the substrate 112 in the vacuum container 110 such that the (surface of) the substrate 112 faces the space (plasma P) between the first electrode 106 and the second electrode 111.

In the configuration in which high frequency is supplied from the impedance matching circuit 102 via the balun 103 between the first electrode 106 and the second electrode 111, since the plasma P is separated from the ground (vacuum container 110), the plasma P will be The space between the first electrode 106 and the second electrode 111 is closed. In addition, according to the configuration in which the substrate 112 is arranged at a position away from the plasma P, damage to the substrate 112 due to the charged particles in the plasma P can be suppressed.

In one example, the first electrode 106 and the first balanced terminal 211 can be electrically connected via the blocking capacitor 104. In other words, the blocking capacitor 104 can be disposed on the electrical connection path between the first electrode 106 and the first balanced terminal 211. Instead of such a configuration, the second balanced terminal 212 and the second electrode 111 are electrically connected via a blocking capacitor. Alternatively, the first balanced terminal 211 and the first electrode 106 may be electrically connected via a blocking capacitor, and the second balanced terminal 212 and the second electrode 111 may be electrically connected via a blocking capacitor.

FIG. 18 schematically shows the configuration of the plasma processing apparatus 1 of the ninth embodiment of the present invention. The plasma processing apparatus 1 of the ninth embodiment is a modification of the plasma processing apparatus 1 of the eighth embodiment, and the area of the first electrode 106 is different from the area of the second electrode 111. Specifically, in the ninth embodiment, the area of the first electrode 106 is smaller than the area of the second electrode 111. The first electrode 106 holds the target 109, and the plasma processing apparatus 1 generates plasma P between the first electrode 106 and the second electrode 111, and the target 109 is sputtered by the plasma P, thereby serving as a substrate The sputtering device for forming a film on 112 operates.

The present invention is not limited to the above-mentioned embodiments, and various changes and modifications can be implemented without departing from the spirit and scope of the present invention. Therefore, in order to make the scope of the present invention public, the following claims are attached.

1‧‧‧Plasma processing device 10‧‧‧Body 101‧‧‧High frequency power supply 102‧‧‧Impedance matching circuit 103‧‧‧ Barron 104‧‧‧Blocking capacitor 106‧‧‧First electrode 107、108‧‧‧Insulator 109‧‧‧ target 110‧‧‧Vacuum container 111‧‧‧ 2nd electrode 112‧‧‧ substrate 201‧‧‧1st unbalanced terminal 202‧‧‧ 2nd unbalanced terminal 211‧‧‧ 1st balanced terminal 212‧‧‧ 2nd balanced terminal 251‧‧‧ First terminal 252‧‧‧2nd terminal 221‧‧‧The first coil 222‧‧‧The second coil 223‧‧‧3rd coil 224‧‧‧ 4th coil 511‧‧‧ substrate holding section

FIG. 1 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. FIG. 2A is a diagram showing a configuration example of a balun. FIG. 2B is a diagram showing a configuration example of a balun. FIG. 3 is a diagram illustrating the function of the balun 103. Fig. 4 is a diagram exemplifying the relationship between currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). 5A is a graph showing the results of simulating the plasma potential and the cathode potential when 1.5≦X/Rp≦5000. 5B is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 5C is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 5D is a graph showing the results of simulating the plasma potential and the cathode potential when 1.5≦X/Rp≦5000. 6A is a graph showing the results of simulating the plasma potential and the cathode potential when 1.5≦X/Rp≦5000. 6B is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 6C is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 6D is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 7 is a diagram illustrating an Rp-jXp confirmation method. FIG. 8 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. 9 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a third embodiment of the present invention. FIG. 10 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fourth embodiment of the present invention. FIG. 11 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. FIG. 12 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. 13 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. 14 is a diagram illustrating the function of a balun according to a sixth embodiment of the present invention. 15A is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 15B is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 15C is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 15D is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 16A is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 16B is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 16C is a graph showing the results of simulating the plasma potential and two cathode potentials when 1.5≦X/Rp≦5000. 16D is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. FIG. 17 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. 18 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a ninth embodiment of the present invention.

1‧‧‧Plasma processing device

10‧‧‧Body

101‧‧‧High frequency power supply

102‧‧‧Impedance matching circuit

103‧‧‧ Barron

104‧‧‧Blocking capacitor

106‧‧‧First electrode

110‧‧‧Vacuum container

111‧‧‧ 2nd electrode

112‧‧‧ substrate

201‧‧‧1st unbalanced terminal

202‧‧‧ 2nd unbalanced terminal

211‧‧‧ 1st balanced terminal

212‧‧‧ 2nd balanced terminal

251‧‧‧ First terminal

252‧‧‧2nd terminal

511‧‧‧ substrate holding section

P‧‧‧Plasma

Claims (11)

A plasma processing device, characterized by: Balun with first unbalanced terminal, second unbalanced terminal, first balanced terminal and second balanced terminal; Grounded vacuum container; A first electrode disposed in the vacuum container and electrically connected to the first balanced terminal; A second electrode arranged in the vacuum vessel to face the first electrode and electrically connected to the second balanced terminal; and The substrate holding portion that holds the substrate in the vacuum container so that the substrate faces the space between the first electrode and the second electrode. A plasma processing apparatus according to claim 1 of the patent application, wherein the first balanced terminal and the first electrode are electrically connected via a blocking capacitor. According to the plasma processing apparatus of claim 1, the second balanced terminal and the second electrode are electrically connected via a blocking capacitor. A plasma processing apparatus according to claim 1 of the patent application, wherein the first balanced terminal and the first electrode are electrically connected via a blocking capacitor, and the second balanced terminal and the second electrode are electrically connected via a blocking capacitor . A plasma processing apparatus as claimed in item 1 of the patent application, wherein the balun includes a first coil connecting the first unbalanced terminal and the first balanced terminal, and connecting the second unbalanced terminal and the foregoing The second coil of the second balanced terminal. A plasma processing device according to claim 5 of the patent application, wherein the balun further includes a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal, The third coil and the fourth coil are configured such that the voltage of the connection node between the third coil and the fourth coil is the midpoint between the voltage of the first balanced terminal and the voltage of the second balanced terminal. A plasma processing apparatus as claimed in item 1 of the patent scope is configured as an etching apparatus for etching the substrate by generating plasma in the space. A plasma processing apparatus as claimed in item 1 of the patent scope is a CVD apparatus that forms a film on the substrate by generating plasma in the space. A plasma processing apparatus as claimed in item 1 of the patent scope, wherein the first electrode holds the target and the plasma is generated in the space, so that the film is formed on the substrate by sputtering Device. For example, the plasma treatment device in the first scope of the patent application, which includes: High frequency power supply; and An impedance matching circuit arranged between the high-frequency power supply and the balun. A plasma processing apparatus according to claim 1 of the patent application, wherein the first balanced terminal when viewing the side of the first electrode and the second electrode from the side of the first balanced terminal and the second balanced terminal When the resistance component between the second balanced terminal is Rp and the inductance between the first unbalanced terminal and the first balanced terminal is X, 1.5≦X/Rp≦5000 is satisfied.

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