TWI678425B - Plasma processing device - Google Patents

Abstract

A plasma processing apparatus includes: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; arranged in the vacuum container, and A first electrode electrically connected to the first balanced terminal; a second electrode arranged in the vacuum container to oppose the first electrode and electrically connected to the second balanced terminal; and The substrate holding portion of the substrate is held in the vacuum container so that the substrate faces the space between the first electrode and the second electrode.

Description

Plasma processing device

The present invention relates to a plasma processing apparatus.

There is a plasma processing apparatus that generates a plasma by applying a high frequency between two electrodes, and processes a substrate by the plasma. Such a plasma processing apparatus can operate as a sputtering apparatus or as an etching apparatus by the area ratio and / or bias voltage of two electrodes. A plasma processing device configured as a sputtering device includes a first electrode holding a target and a second electrode holding a substrate. A high frequency is applied between the first electrode and the second electrode, and the first electrode and the second electrode are applied. Plasma is generated between the electrodes (between the target and the substrate). By the generation of the plasma, a self-bias voltage is generated on the surface of the target, whereby ions will collide with the target, and particles of the material constituting this will be released from the target.

Patent Document 1 describes a sputtering device including a grounded chamber, a target electrode connected to an RF generation source via an impedance matching circuit network, and a substrate holding electrode grounded via a substrate electrode tuning circuit.

In the sputtering apparatus described in Patent Document 1, the chamber functions as an anode in addition to the substrate holding electrode. The self-bias voltage varies depending on the state of the part that can function as the cathode and the state of the part that can function as the anode. Therefore, when the chamber functions as the anode in addition to the substrate holding electrode, the self-bias voltage also changes depending on the state of the part functioning as the anode in the chamber. Changes in the self-bias voltage will cause changes in the plasma potential, and changes in the plasma potential will affect the characteristics of the film being formed.

When a film is formed on a substrate by a sputtering device, a film is also formed on the inner surface of the chamber. As a result, the state of the portion of the chamber that can function as an anode changes. Therefore, if the sputtering device is continuously used, the self-bias voltage will change depending on the film formed on the inner surface of the chamber, and the plasma potential will also change. Therefore, it has been difficult to maintain the characteristics of a film formed on a substrate to be constant when a sputtering device has been used in the past for a long time.

Similarly, when the etching device is used for a long period of time, the self-bias voltage also changes depending on the film formed on the inner surface of the chamber, so that the plasma potential also changes, so it is difficult to maintain the etching characteristics of the substrate to a certain . [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 55-35465

The present invention has been developed based on the above-mentioned problems, and provides a technique that is advantageous for stabilizing the plasma potential during long-term use.

A first aspect of the present invention relates to a plasma processing apparatus, and the plasma processing apparatus includes: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; A vacuum container; arranged in the vacuum container and electrically connected to the first electrode of the first balanced terminal; arranged in the vacuum container so as to oppose the first electrode and electrically A second electrode connected to the second balanced terminal; and a substrate holding portion that holds the substrate in the vacuum container so that the substrate faces a space between the first electrode and the second electrode.

Hereinafter, the present invention will be described with reference to the accompanying drawings through embodiments illustrated by examples.

FIG. 1 schematically shows the configuration of the plasma processing apparatus 1 according to the first embodiment of the present invention. The plasma processing apparatus of the first embodiment can be operated as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balanced-unbalanced conversion circuit) 103, a vacuum container 110, a first electrode 106, and a second electrode 111. Or, it can also be understood that the plasma processing apparatus 1 includes a balun 103 and a main body 10, and the main body 10 includes a vacuum container 110, a first electrode 106, and a second electrode 111. The main body 10 includes a first terminal 251 and a second terminal 252. The first electrode 106 may be disposed to separate the vacuum space and the external space (that is, a part of the vacuum partition wall) together with the vacuum container 110, or may be disposed in the vacuum container 110. The second electrode 111 may be arranged to separate the vacuum space and the external space (that is, a part of the vacuum partition wall) together with the vacuum container 110, or may be arranged in the vacuum container 110.

The balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103. . The vacuum container 110 is made of a conductor and is grounded.

In the first embodiment, the first electrode 106 is a cathode and holds the target 109. The target 109 is, for example, an insulator material or a conductor material. In the first embodiment, the second electrode 111 is an anode and holds the substrate 112. The plasma processing apparatus 1 according to the first embodiment operates as a sputtering apparatus that forms a film on the substrate 112 by sputtering of the target 109. The first electrode 106 is electrically connected to the first balanced terminal 211, and the second electrode 111 is electrically connected to the second balanced terminal 212. The fact that the first electrode 106 and the first balanced terminal 211 are electrically connected means that a current can flow between the first electrode 106 and the first balanced terminal 211, and is configured between the first electrode 106 and the first balanced terminal 211. There is a current path. Similarly, in this specification, a and b are electrically connected to each other, meaning that a current path is formed between a and b in such a manner that current can flow between a and b.

The above configuration can also be understood as the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211. The second terminal 252 is electrically connected to the second balanced terminal 212.

In the first embodiment, the first electrode 106 and the first balanced terminal 211 (the first terminal 251) are electrically connected via the blocking capacitor 104. The blocking capacitor 104 blocks a DC current between the first balanced terminal 211 and the first electrode 106 (or between the first balanced terminal 211 and the second balanced terminal 212). Instead of the blocking capacitor 104, an impedance matching circuit 102 described later may be configured to block a DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202. The first electrode 106 is supported by the vacuum container 110 via an insulator 107. The second electrode 111 may be supported by the vacuum container 110 via the insulator 108. Alternatively, an insulator 108 may be disposed between the second electrode 111 and the vacuum container 110.

The plasma processing apparatus 1 may further include a high-frequency power source 101 and an impedance matching circuit 102 disposed between the high-frequency power source 101 and the balun 103. The high-frequency power source 101 supplies high-frequency (high-frequency current, high-frequency voltage, and high-frequency power) to the balun 103 between the first unbalanced terminal 201 and the second unbalanced terminal 202 via the impedance matching circuit 102. In other words, the high-frequency power source 101 supplies high-frequency (high-frequency current, high-frequency voltage, and high-frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. Or, it can also be understood that the high-frequency power source 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the impedance matching circuit 102 and the balun 103.

A gas (for example, Ar, Kr, or Xe gas) is supplied to the internal space of the vacuum container 110 via a gas supply unit (not shown) provided in the vacuum container 110. A high-frequency power is supplied between the first electrode 106 and the second electrode 111 via the high-frequency power source 101 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. As a result, a plasma is generated between the first electrode 106 and the second electrode 111, and a self-bias voltage is generated on the surface of the target 109. Ions in the plasma will collide with the surface of the target 109 and be released from the target 109. Particles of the material that makes up that. Then, a film is formed on the substrate 112 by the particles.

FIG. 2A shows a configuration example of the balun 103. The balun 103 shown in FIG. 2A includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 that connects the second unbalanced terminal 202 and the second balanced terminal 212. The first coil 221 and the second coil 222 are coils of the same number of windings, and share a core.

FIG. 2B shows another configuration example of the balun 103. The balun 103 shown in FIG. 2B includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 that connects the second unbalanced terminal 202 and the second balanced terminal 212. . The first coil 221 and the second coil 222 are coils of the same number of windings, and share a core. The balun 103 shown in FIG. 2B further includes a third coil 223 and a fourth coil 224, and a third coil 223 and a fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212. It is comprised so that the voltage of the connection node 213 of the 3rd coil 223 and the 4th coil 224 may be set as the midpoint of the voltage of the 1st balanced terminal 211 and the voltage of the 2nd balanced terminal 212. The third coil 223 and the fourth coil 224 are coils of the same number of windings, and share a core. The connection node 213 may also be grounded, may be connected to the vacuum container 110, or may be formed in a floating state.

The function of the balun 103 will be described with reference to FIG. 3. Let the current flowing through the first unbalanced terminal 201 be I1, let the current flowing through the first balanced terminal 211 be I2, let the current flowing through the second unbalanced terminal 202 be I2 ', and let the current I2 flow The current to ground is set to I3. I3 = 0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit for ground is the best. I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows to ground, the isolation performance of the balanced circuit against ground is the worst. The index ISO showing the degree of such isolation performance can be given by the following formula. Under this definition, the absolute value of ISO is larger and the isolation performance is better. ISO [dB] = 20log (I3 / I2 ’)

In FIG. 3, Rp-jXp indicates that the first electrode 106 and the second electrode 111 are viewed from the side of the first balanced terminal 211 and the second balanced terminal 212 in a state where plasma is generated in the internal space of the vacuum container 110. Impedance (including the reactance of the blocking capacitor 104) at the side (side of the body 10). Rp is a resistance component, and -Xp is a reactance component. In addition, in FIG. 3, X is a reactance component (inductance component) showing the impedance of the first coil 221 of the balun 103. ISO is relevant for X / Rp.

FIG. 4 illustrates the relationship between the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp) by way of example. The inventors have found that a configuration in which high frequency is supplied from the high-frequency power source 101 to the first electrode 106 and the second electrode 111 via the balun 103, and in particular, in this configuration, meeting 1.5 ≦ X / Rp ≦ 5000 is advantageous for The potential of the plasma (plasma potential) formed in the internal space (the space between the first electrode 106 and the second electrode 111) of the vacuum container 110 is dulled to the state of the inner surface of the vacuum container 110. Here, the fact that the plasma potential is insensitive to the state of the inner surface of the vacuum container 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 is equivalent to -10.0dB ≧ ISO ≧ -80dB.

5A to 5D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000. FIG. 5A shows a plasma potential and a cathode potential in a state where a film is not formed on the inner surface of the vacuum container 110. FIG. 5B shows the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. FIG. 5C shows a plasma potential and a cathode potential in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 5D shows a plasma potential and a cathode potential in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. It can be understood from FIGS. 5A to 5D that compliance with 1.5 ≦ X / Rp ≦ 5000 will help stabilize the plasma potential in various states for the inner surface of the vacuum container 110.

6A to 6D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6A shows a plasma potential and a cathode potential in a state where a film is not formed on the inner surface of the vacuum container 110. FIG. 6B shows a plasma potential and a cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. FIG. 6C shows a plasma potential and a cathode potential in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 6D shows a plasma potential and a cathode potential in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. It can be understood from FIGS. 6A to 6D that when it does not meet 1.5 ≦ X / Rp ≦ 5000, the plasma potential changes depending on the state of the inner surface of the vacuum container 110.

Here, in the case of X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.0, X / Rp = 0.5), the plasma potential can be easily adjusted. The state of the inner surface of the vacuum container 110 changes. In the case where X / Rp> 5000, a film is not formed on the inner surface of the vacuum container 110, and a discharge occurs only between the first electrode 106 and the second electrode 111. However, in the case of X / Rp> 5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential responds sensitively to this, and the results are shown as examples shown in FIGS. 6A to 6D. On the other hand, when X / Rp <1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (electrical characteristics of the film formed on the inner surface) is caused. The effect is significant and the plasma potential will change depending on the film formation. Therefore, as described above, it is advantageous in the case where the plasma processing apparatus 1 is configured so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

Referring to FIG. 7, an example of a method for determining Rp-jXp (only Rp is actually known) is shown. First, the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the main body 10. The second terminal 252 (second electrode 111) of the main body 10 is grounded. In this state, high frequency is supplied from the high-frequency power source 101 to the first terminal 251 of the main body 10 through the impedance matching circuit 102. In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently configured by the coils L1 and L2 and the variable capacitors VC1 and VC2. The plasma can be generated by adjusting the capacitance of the variable capacitors VC1 and VC2. In the plasma stable state, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 (the side of the first electrode 106 and the second electrode 111) when the plasma is generated. The impedance of the impedance matching circuit 102 at this time is Rp + jXp.

Therefore, Rp-jXp can be obtained from the impedance Rp + jXp of the impedance matching circuit 102 at the time of impedance matching (actually known is only Rp). Rp-jXp may be obtained by simulation based on design data, for example.

From the Rp thus obtained, X / Rp can be specified. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

FIG. 8 schematically shows the configuration of a plasma processing apparatus 1 according to a second embodiment of the present invention. The plasma processing apparatus 1 according to the second embodiment operates as an etching apparatus for etching the substrate 112. In the second embodiment, the first electrode 106 is a cathode and holds the substrate 112. In the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 according to the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104. In other words, in the plasma processing apparatus 1 according to the second embodiment, the blocking capacitor 104 is disposed on the electrical connection path between the first electrode 106 and the first balanced terminal 211.

FIG. 9 schematically shows the configuration of a plasma processing apparatus 1 according to a third embodiment of the present invention. The plasma processing apparatus 1 according to the third embodiment is a modification of the plasma processing apparatus 1 according to the first embodiment, and further includes at least one of a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. In the example shown in FIG. 9, the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. A corrugated tube 113 constituting a vacuum partition wall may be provided between the vacuum container 110 and the driving mechanism 114.

Similarly, the plasma processing apparatus 1 according to the second embodiment may further include at least one of a mechanism for raising and lowering the first electrode 106 and a mechanism for rotating the second electrode 106.

FIG. 10 schematically shows the configuration of a plasma processing apparatus 1 according to a fourth embodiment of the present invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The matters not mentioned in the plasma processing apparatus 1 according to the fourth embodiment are those according to the first to third embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 106 and a second electrode 135 constituting the first group, a first electrode 141, and a first electrode constituting the second group. 2electrode 145. Or, it can also be understood that the plasma processing apparatus 1 is provided with a first balun 103, a second balun 303, and a body 10, and the body 10 is provided with a vacuum container 110, a first electrode 106 and a second electrode constituting the first group. 135. The first electrode 141 and the second electrode 145 constituting the second group. The main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 is A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is A balanced circuit is connected. The vacuum container 110 is grounded.

The first electrode 106 of the first group is a holding target 109. The target 109 is, for example, an insulator material or a conductor material. The second electrode 135 of the first group is arranged around the first electrode 106. The first electrode 106 of the first group is a first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 135 of the first group is a second balanced terminal electrically connected to the first balun 103 212. The first electrode 141 of the second group is a holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is a first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is a second balanced terminal electrically connected to the second balun 303 412.

The above structure can be understood as the first electrode 106 of the first group is electrically connected to the first terminal 251, the second electrode 135 of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically The first balanced terminal 211 is connected to the first balun 103, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. The above configuration can be understood as the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected The first balanced terminal 411 is electrically connected to the second balun 303, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 106 of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via a blocking capacitor 104. The blocking capacitor 104 is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 106 of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. Instead of the blocking capacitor 104, the first impedance matching circuit 102 may be configured to block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. The first electrode 106 and the second electrode 135 of the first group are supported by the vacuum container 110 via an insulator 132.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 are electrically connectable via a blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group are supported by the vacuum container 110 via an insulator 142.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high frequency to the first balun 103 and the second unbalanced terminal 202 via the first impedance matching circuit 102. In other words, the first high-frequency power source 101 supplies high frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103, and the blocking capacitor 104. Alternatively, the first high-frequency power source 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 106 and the second electrode 135 of the first group are first high-frequency supply units that supply high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power source 301 and a second impedance matching circuit 302 arranged between the second high-frequency power source 301 and the second balun 303. The second high-frequency power supply 301 supplies high frequency to the second balun 303 between the first unbalanced terminal 401 and the second unbalanced terminal 402 via the second impedance matching circuit 302. In other words, the second high-frequency power source 301 supplies high-frequency frequencies between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high-frequency power source 301 supplies high frequency to the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group are second high-frequency supply units that supply high-frequency to the internal space of the vacuum container 110.

With the high-frequency supply from the first high-frequency power source 101, in a state where the plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come from the sides. The impedance when looking at the sides of the first electrode 106 and the second electrode 135 (side of the body 10) of the first group is Rp1-jXp1. The reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to satisfy 1.5 ≦ X1 / Rp1 ≦ 5000.

In addition, by the high-frequency supply from the second high-frequency power source 301, in a state where plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the sides of the first electrode 141 and the second electrode 145 of the second group (side of the body 10) are viewed from the side, the impedance is Rp2-jXp2. The reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to meet 1.5 ≦ X2 / Rp2 ≦ 5000.

FIG. 11 schematically shows the configuration of a plasma processing apparatus 1 according to a fifth embodiment of the present invention. The apparatus 1 according to the fifth embodiment is configured to have additional drive mechanisms 114 and 314 compared to the plasma processing apparatus 1 according to the fourth embodiment. The driving mechanism 114 may include at least one of a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. The driving mechanism 314 may be provided with a mechanism for raising and lowering the second electrode 145.

FIG. 12 schematically shows the configuration of a plasma processing apparatus 1 according to a sixth embodiment of the present invention. The plasma processing apparatus of the sixth embodiment can be operated as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned as the sixth embodiment are those according to the first to fifth embodiments. The plasma processing apparatus 1 according to the sixth embodiment includes a plurality of first high-frequency supply units and at least one second high-frequency supply unit. One of the plurality of first high-frequency supply units may include a first electrode 106a, a second electrode 135a, and a first balun 103a. The other one of the plurality of first high-frequency supply units may include a first electrode 106b, a second electrode 135b, and a first balun 103b. Here, an example in which the plurality of first high-frequency supply units is configured by two high-frequency supply units will be described. In addition, the two high-frequency supply units and their related components are distinguished from each other by the subscripts a and b. Similarly, the two targets are distinguished from each other by the following symbols a and b.

In another aspect, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, a vacuum container 110, a first electrode 106a and a second electrode 135a, a first electrode 106b, and a second The electrode 135b, the first electrode 141, and the second electrode 145. Or, it can also be understood that the plasma processing apparatus 1 includes a plurality of first baluns 103a, 103b, a second balun 303, and a body 10, and the body 10 is provided with a vacuum container 110, a first electrode 106a, and a second electrode 135a , The first electrode 106b and the second electrode 135b, the first electrode 141, and the second electrode 145. The main body 10 includes first terminals 251a and 251b, second terminals 252a and 252b, third terminals 451, and fourth terminals 452.

The first balun 103a includes a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a. An unbalanced circuit is connected to the side of the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and the side of the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a is A balanced circuit is connected. The first balun 103b includes a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b. An unbalanced circuit is connected to the side of the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and the side of the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b is A balanced circuit is connected.

The second balun 303 may have the same structure as the first baluns 103a and 103b. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is A balanced circuit is connected. The vacuum container 110 is grounded.

The first electrodes 106a and 106b hold the targets 109a and 109b, respectively. The targets 109a and 109b are, for example, insulator materials or conductor materials. The second electrodes 135a and 135b are arranged around the first electrodes 106a and 106b, respectively. The first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first balun 103a and 103b, respectively, and the second electrodes 135a and 135b are electrically connected to the first balun 103a and 103b respectively. The second balanced terminals 212a and 212b.

The first electrode 141 is a holding substrate 112. The second electrode 145 is arranged around the first electrode 141. The first electrode 141 is a first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 is a second balanced terminal 412 electrically connected to the second balun 303.

The above configuration can be understood as the first electrodes 106a, 106b are electrically connected to the first terminals 251a, 251b, respectively, and the second electrodes 135a, 135b are electrically connected to the second terminals 252a, 252b, the first terminals 251a, 251a, 251b is electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, and second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b Composition. The above configuration can be understood as the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrodes 106a, 106b and the first balanced terminals 211a, 211b (the first terminals 251a, 251b) of the first baluns 103a, 103b can be electrically connected via blocking capacitors 104a, 104b, respectively. The blocking capacitors 104a and 104b are between the first balanced terminals 211a and 211b of the first baluns 103a and 103b and the first electrodes 106a and 106b (or the first balanced terminals 211a, 211b and the first baluns of the first baluns 103a and 103b). 2 Between the balanced terminals 212a and 212b) interrupts the DC current. Instead of blocking capacitors 104a and 104b, the first impedance matching circuits 102a and 102b will block the flow between the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b. By means of a direct current. Alternatively, the blocking capacitors 104a and 104b may be disposed between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (the second terminals 252a and 252b) of the first baluns 103a and 103b. The first electrodes 106a and 106b and the second electrodes 135a and 135b are supported by the vacuum container 110 via the insulators 132a and 132b, respectively.

The first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 are electrically connectable via a blocking capacitor 304. The blocking capacitor 304 blocks a DC current between the first balanced terminal 411 and the first electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Alternatively, the blocking capacitor 304 may be disposed between the second electrode 145 and the second balanced terminal 412 (the fourth terminal 452) of the second balun 303. The first electrode 141 and the second electrode 145 are supported by the vacuum container 110 via an insulator 142.

The plasma processing apparatus 1 may include a plurality of first high-frequency power sources 101a and 101b, and a first one disposed between the plurality of first high-frequency power sources 101a and 101b and the plurality of first baluns 103a and 103b. Impedance matching circuits 102a and 102b. The first high-frequency power sources 101a and 101b are the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b that supply high frequencies to the first baluns 103a and 103b via the first impedance matching circuits 102a and 102b, respectively. between. In other words, the first high-frequency power sources 101a and 101b supply high frequencies to the first electrodes 106a, 106b, and the second electrode via the first impedance matching circuits 102a, 102b, the first baluns 103a, 103b, and the blocking capacitors 104a, 104b, respectively. 135a, 135b. Alternatively, the first high-frequency power sources 101a and 101b are supplied to the first terminal 251a and 251b and the second terminals 252a and 252b of the body 10 via the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. between.

The plasma processing apparatus 1 may include a second high-frequency power source 301 and a second impedance matching circuit 302 arranged between the second high-frequency power source 301 and the second balun 303. The second high-frequency power supply 301 supplies high frequency to the second balun 303 between the first unbalanced terminal 401 and the second unbalanced terminal 402 via the second impedance matching circuit 302. In other words, the second high-frequency power source 301 supplies a high frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high-frequency power source 301 supplies high frequency to the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.

FIG. 13 schematically shows the configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment is operable as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The matters not mentioned in the plasma processing apparatus 1 according to the seventh embodiment are those according to the first to sixth embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 105a and a second electrode 105b constituting the first group, a first electrode 141, and a first electrode constituting the second group. 2electrode 145. Or, it can also be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode constituting the first group 105b. The first electrode 141 and the second electrode 145 constituting the second group. The main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 is A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is A balanced circuit is connected. The vacuum container 110 is grounded.

The first electrode 105a of the first group holds the first target 109a, and faces the space on the side of the substrate 112 via the first target 109a. The second electrode 105b of the first group is disposed beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 via the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105a of the first group is a first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105b of the first group is a second balanced terminal electrically connected to the first balun 103 212.

The first electrode 141 of the second group is a holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is a first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is a second balanced terminal electrically connected to the second balun 303 412.

The above structure can be understood as the first electrode 105a of the first group is electrically connected to the first terminal 251, the second electrode 105b of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically The first balanced terminal 211 is connected to the first balun 103, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. The above configuration can be understood as the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected The first balanced terminal 411 is electrically connected to the second balun 303, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via a blocking capacitor 104a. The blocking capacitor 104a is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 105a of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. The second electrode 105b of the first group and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via a blocking capacitor 104b. The blocking capacitor 104b is shielded between the second balanced terminal 212 of the first balun 103 and the second electrode 105b of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. The first electrode 105a and the second electrode 105b of the first group can be supported by the vacuum container 110 via the insulators 132a and 132b, respectively.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 are electrically connectable via a blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via the insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high-frequency power between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a and 104b. Alternatively, the first high-frequency power source 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 105a and the second electrode 105b of the first group are first high-frequency supply units that configure high-frequency supply to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power source 301 and a second impedance matching circuit 302 arranged between the second high-frequency power source 301 and the second balun 303. The second high-frequency power supply 301 supplies high frequency to the second balun 303 between the first unbalanced terminal 401 and the second unbalanced terminal 402 via the second impedance matching circuit 302. The second high-frequency power source 301 supplies high-frequency power between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high-frequency power source 301 supplies high frequency to the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group are second high-frequency supply units that supply high-frequency to the internal space of the vacuum container 110.

With the high-frequency supply from the first high-frequency power source 101, in a state where plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The impedance when looking at the sides of the first electrode 105a and the second electrode 105b (side of the body 10) of the first group is Rp1-jXp1. The reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to meet 1.5 ≦ X1 / Rp1 ≦ 5000.

In addition, by the high-frequency supply from the second high-frequency power source 301, in a state where plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 127 and the second electrode 130 of the second group (the side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. The reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to satisfy 1.5 ≦ X2 / Rp2 ≦ 5000.

The plasma processing apparatus 1 according to the seventh embodiment may further include at least one of a mechanism for raising and lowering the first electrode 141 constituting the second group and a mechanism for rotating the first electrode 141 constituting the second group. In the example shown in FIG. 13, the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. Further, in the example shown in FIG. 13, the plasma processing apparatus 1 is provided with a mechanism 314 for raising and lowering the second electrode 145 constituting the second group. Between the vacuum container 110 and the driving mechanisms 114 and 314, a corrugated tube constituting a vacuum partition wall may be provided.

The function of the first balun 103 of the plasma processing apparatus 1 according to the seventh embodiment shown in FIG. 13 will be described with reference to FIG. 14. Let the current flowing through the first unbalanced terminal 201 be I1, let the current flowing through the first balanced terminal 211 be I2, let the current flowing through the second unbalanced terminal 202 be I2 ', and let the current I2 flow The current to ground is set to I3. I3 = 0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit for ground is the best. I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows to ground, the isolation performance of the balanced circuit against ground is the worst. The index ISO showing the degree of such isolation performance is the same as the first to fifth embodiments, and the following formula can be given. Under this definition, the absolute value of ISO is larger and the isolation performance is better. ISO [dB] = 20log (I3 / I2 ’)

In FIG. 14, Rp-jXp (= Rp / 2-jXp / 2 + Rp / 2-jXp / 2) indicates that the plasma is generated from the internal space of the vacuum container 110 from the first balanced terminal 211 and the first 2 The impedance (including the reactance of the blocking capacitors 104a and 104b) when the side of the balanced terminal 212 is viewed from the side of the first electrode 105a and the second electrode 105b (the side of the body 10). Rp is a resistance component, and -Xp is a reactance component. In addition, in FIG. 14, X is a reactance component (inductance component) showing the impedance of the first coil 221 of the first balun 103. ISO is relevant for X / Rp.

FIG. 4 referred to in the description of the first embodiment is an example showing the relationship between the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp). The relationship of FIG. 4 is also established in the seventh embodiment. The inventor has found that in the seventh embodiment, it is also advantageous to satisfy 1.5 ≦ X / Rp ≦ 5000 so that the internal space (the space between the first electrode 105a and the second electrode 105b) formed in the vacuum container 110 is favorable. The potential of the plasma (plasma potential) is insensitive to the state of the inner surface of the vacuum container 110. Here, the fact that the plasma potential is insensitive to the state of the inner surface of the vacuum container 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 is equivalent to -10.0dB ≧ ISO ≧ -80dB.

15A to 15D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 15A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110. . 15B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. . 15C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 15D shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2 potential) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110 ). It can be understood from FIGS. 15A to 15D that compliance with 1.5 ≦ X / Rp ≦ 5000 is beneficial for the inner surface of the vacuum container 110 to stabilize the plasma potential in various states.

16A to 16D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 16A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110. . FIG. 16B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. . 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. ). 16D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. ). It can be understood from FIGS. 16A to 16D that when it does not conform to 1.5 ≦ X / Rp ≦ 5000, the plasma potential changes depending on the state of the inner surface of the vacuum container 110.

Here, in the case of X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.16, X / Rp = 0.87), the plasma potential can be easily determined. The state of the inner surface of the vacuum container 110 changes. When X / Rp> 5000, in a state where the film is not formed on the inner surface of the vacuum container 110, a discharge occurs only between the first electrode 105a and the second electrode 105b. However, in the case of X / Rp> 5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential responds sensitively to this, and the results are shown as examples shown in FIGS. 16A to 16D. On the other hand, when X / Rp <1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (electrical characteristics of the film formed on the inner surface) is caused. The effect is significant and the plasma potential will change depending on the film formation. Therefore, as described above, it is advantageous in the case where the plasma processing apparatus 1 is configured so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

FIG. 17 schematically shows the configuration of a plasma processing apparatus 1 according to an eighth embodiment of the present invention. The plasma processing apparatus 1 according to the eighth embodiment is a modification of the plasma processing apparatus 1 according to the first or second embodiment. The plasma processing apparatus 1 can operate as a device for processing the substrate 112 by generating a plasma P at a position isolated from the substrate 112. . The plasma processing apparatus 1 according to the eighth embodiment can be configured to operate, for example, as a sputtering apparatus, an etching apparatus, or a CVD apparatus.

The plasma processing apparatus 1 includes a balun (balanced-unbalanced conversion circuit) 103, a vacuum container 110, a first electrode 106, a second electrode 111, and a substrate holding portion 511. Or, it can also be understood that the plasma processing apparatus 1 includes the balun 103 and the main body 10, and the main body 10 includes a vacuum container 110, a first electrode 106, a second electrode 111, and a substrate holding portion 511. The main body 10 includes a first terminal 251 and a second terminal 252.

The balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103. . The vacuum container 110 is made of a conductor and is grounded.

In the eighth embodiment, the first electrode 106 is a cathode. In the eighth embodiment, the second electrode 111 is an anode. The first electrode 106 is disposed in the vacuum container 110 and is electrically connected to the first balanced terminal 211. The second electrode 111 is arranged to face the first electrode 106 in the vacuum container 110 and is electrically connected to the second balanced terminal 212. By supplying a high frequency from the high-frequency power source 101 to the first electrode 106 and the second electrode 111 through the balun 103, a plasma P is generated in a space between the first electrode 106 and the second electrode 111. The substrate holding portion 511 holds the substrate 112 in the vacuum container 110 so that the (surface of) the substrate 112 faces the space (plasma P) between the first electrode 106 and the second electrode 111.

In the configuration in which high frequency is supplied from the impedance matching circuit 102 through the balun 103 to between the first electrode 106 and the second electrode 111, the plasma P is separated from the ground (vacuum container 110), so the plasma P is Closed in the space between the first electrode 106 and the second electrode 111. Furthermore, if the substrate 112 is disposed at a position away from the plasma P, the substrate 112 can be prevented from being damaged by the charged particles in the plasma P.

In one example, the first electrode 106 and the first balanced terminal 211 can be electrically connected via the blocking capacitor 104. In other words, the blocking capacitor 104 may be disposed on an electrical connection path between the first electrode 106 and the first balanced terminal 211. Instead of such a configuration, the second balanced terminal 212 and the second electrode 111 are electrically connected via a blocking capacitor. Alternatively, the first balanced terminal 211 and the first electrode 106 may be electrically connected via a blocking capacitor, and the second balanced terminal 212 and the second electrode 111 may be electrically connected via a blocking capacitor.

FIG. 18 schematically shows the configuration of a plasma processing apparatus 1 according to a ninth embodiment of the present invention. The plasma processing apparatus 1 according to the ninth embodiment is a modification of the plasma processing apparatus 1 according to the eighth embodiment, and the area of the first electrode 106 is different from that of the second electrode 111. Specifically, in the ninth embodiment, the area of the first electrode 106 is smaller than the area of the second electrode 111. The first electrode 106 holds the target 109, and the plasma processing apparatus 1 generates a plasma P between the first electrode 106 and the second electrode 111, and the target 109 is sputtered by the plasma P, thereby serving as a substrate. A sputtering device for forming a film on 112 is operated.

The present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, in order to make the scope of the present invention public, the following claims are attached.

1‧‧‧ Plasma treatment device

10‧‧‧ Ontology

101‧‧‧High Frequency Power

102‧‧‧Impedance matching circuit

103‧‧Barron

104‧‧‧ blocking capacitor

106‧‧‧The first electrode

107, 108‧‧‧ insulator

109‧‧‧Target

110‧‧‧Vacuum container

111‧‧‧Second electrode

112‧‧‧ substrate

201‧‧‧The first unbalanced terminal

202‧‧‧The second unbalanced terminal

211‧‧‧The first balanced terminal

212‧‧‧Second balanced terminal

251‧‧‧The first terminal

252‧‧‧ 2nd terminal

221‧‧‧The first coil

222‧‧‧The second coil

223‧‧‧3rd coil

224‧‧‧4th coil

511‧‧‧ substrate holding section

FIG. 1 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. FIG. 2A is a diagram showing a configuration example of a balun. FIG. 2B is a diagram showing a configuration example of a balun. FIG. 3 is a diagram illustrating the function of the balun 103. FIG. 4 is a diagram illustrating the relationship among the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp). FIG. 5A is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 5B is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. C FIG. 5C is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 5D is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 6A is a diagram showing a result of simulating plasma potential and cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6B is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6C is a diagram showing a result of simulating plasma potential and cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6D is a diagram showing the results of simulating plasma potential and cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 7 is a diagram illustrating a method of confirming Rp-jXp. 8 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a second embodiment of the present invention. 9 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a third embodiment of the present invention. 10 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a fourth embodiment of the present invention. 11 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a fifth embodiment of the present invention. Fig. 12 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a sixth embodiment of the present invention. 13 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. FIG. 14 is a diagram illustrating the function of a balun according to a sixth embodiment of the present invention. FIG. 15A is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 15B is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. C FIG. 15C is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. 15D is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. 16A is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 16B is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 16C is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 16D is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 17 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to an eighth embodiment of the present invention. FIG. 18 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a ninth embodiment of the present invention.

Claims (12)

A plasma processing apparatus, comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; and a vacuum container disposed in the vacuum container. And is electrically connected to the first balanced terminal and the first electrode that is not grounded; is arranged in the vacuum container to face the first electrode and is electrically connected to the second balanced terminal , The second electrode that is not grounded, and a method that the substrate faces the space between the first electrode and the second electrode, and the substrate is vertically arranged for the first electrode and the second electrode, in A substrate holding portion that holds the substrate in the vacuum container. For example, the plasma processing apparatus according to item 1 of the application, wherein the first balanced terminal and the first electrode are electrically connected via a blocking capacitor. For example, the plasma processing apparatus according to item 1 of the application, wherein the second balanced terminal and the second electrode are electrically connected via a blocking capacitor. For example, the plasma processing device of the first patent application range, wherein the first balanced terminal and the first electrode system are electrically connected via a blocking capacitor, and the second balanced terminal and the second electrode system are electrically connected via a blocking capacitor. . For example, the plasma processing device of the first scope of the patent application, wherein the balun includes a first coil that connects the first unbalanced terminal and the first balanced terminal, and a second coil that connects the second unbalanced terminal and the aforementioned The second coil of the second balanced terminal. For example, the plasma processing device of the fifth scope of the patent application, wherein the balun further includes a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal. The three coils and the fourth coil are configured such that a voltage at a connection node between the third coil and the fourth coil is used as a midpoint between the voltage of the first balanced terminal and the voltage of the second balanced terminal. For example, the plasma processing apparatus according to item 1 of the patent application scope is an etching apparatus configured to etch the substrate by generating plasma in the space. For example, the plasma processing apparatus according to the first patent application range is a CVD apparatus configured to form a film on the substrate by generating plasma in the space. For example, the plasma processing apparatus of the first patent application scope is configured such that the area of the first electrode is smaller than the area of the second electrode, and the first electrode holds a target so that the plasma is generated in the space. This is a sputtering device that forms a film on the aforementioned substrate by sputtering. For example, the plasma processing device of the first patent application scope further includes: a high-frequency power source; and an impedance matching circuit arranged between the high-frequency power source and the balun. The plasma processing apparatus according to any one of claims 1 to 10 in the patent application scope, wherein the first electrode and the second electrode are viewed from the side of the first balanced terminal and the second balanced terminal. When the resistance component between the first balanced terminal and the second balanced terminal is set to Rp, and the inductance between the first unbalanced terminal and the first balanced terminal is set to X, 1.5 ≦ X is satisfied. / Rp ≦ 5000. The plasma processing apparatus according to any one of claims 1 to 10, wherein the first electrode is between the space between the first electrode and the second electrode and the substrate holding portion. Neither the aforementioned second electrode is arranged.