TWI693861B - Plasma treatment device - Google Patents

Abstract

Plasma processing device Plasma processing device is equipped with: 　　Balun with first unbalanced terminal, second unbalanced terminal, first balanced terminal and second balanced terminal; 　　grounded vacuum container; 　　 is electrically connected to the aforementioned The first electrode of the first balanced terminal; 　　 is electrically connected to the second electrode of the second balanced terminal; 　　 affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode Adjustment reactor; 　　 generates high-frequency high-frequency power supplied between the first unbalanced terminal and the second unbalanced terminal; 　　the substrate holding portion holding the substrate; and the driving mechanism that rotates the substrate holding portion, The high frequency power supply can change the frequency of the high frequency, and adjust the relationship by changing the frequency.

Description

Plasma treatment device

The invention relates to a plasma processing device.

There is a plasma processing device that generates plasma by applying high frequency between two electrodes, and processes a substrate by the plasma. Such a plasma processing apparatus can operate as a sputtering apparatus or as an etching apparatus based on the area ratio and/or bias of two electrodes. The plasma processing apparatus configured as a sputtering apparatus includes: a first electrode holding a target, and a second electrode holding a substrate, a high frequency is applied between the first electrode and the second electrode, and the first electrode and the second electrode Plasma is generated between the electrodes (between the target and the substrate). By generating plasma, a self-bias voltage is generated on the surface of the target, whereby ions will collide with the target, and particles of the material constituting this will be released from the target.

Patent Document 1 describes a sputtering device including a grounded chamber, a target electrode connected to an RF generation source through an impedance matching circuit network, and a substrate holding electrode grounded through a substrate electrode tuning circuit.

In the sputtering apparatus described in Patent Document 1, in addition to the substrate holding electrode, the chamber can function as an anode. The self-bias voltage varies depending on the state of the part that can function as the cathode and the state of the part that can function as the anode. Therefore, in addition to the substrate holding electrode, when the chamber also functions as an anode, the self-bias voltage also changes depending on the state of the portion of the chamber that functions as the anode. The change of the self-bias voltage will bring about the change of the plasma potential, and the change of the plasma potential will affect the characteristics of the formed film.

If a film is formed on the substrate by a sputtering device, a film is also formed on the inner surface of the chamber. As a result, the state of the portion of the chamber that can function as an anode changes. Therefore, if the sputtering device continues to be used, the self-bias voltage will change according to the film formed on the inner surface of the chamber, and the plasma potential will also change. Therefore, in the case where a sputtering apparatus has been used for a long time in the past, it is difficult to maintain the characteristics of the film formed on the substrate to be constant.

Similarly, when the etching apparatus is used for a long period of time, the self-bias voltage will vary depending on the film formed on the inner surface of the chamber, and the plasma potential will also change, making it difficult to maintain the etching characteristics of the substrate to a certain level. . [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Special Public No. 55-35465

The present invention is based on the above-mentioned problems to recognize the developers and provide a technique that is advantageous for stabilizing the plasma potential during long-term use.

A first aspect of the present invention relates to a plasma processing apparatus. The plasma processing apparatus includes: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; 　　 is grounded The vacuum container; 　　 electrically connected to the first electrode of the first balanced terminal; 　　 electrically connected to the second electrode of the second balanced terminal; 　　 affects the first voltage applied to the first electrode and is applied to The reactor for adjusting the relationship between the second voltage of the second electrode; 　　 generating a high-frequency high-frequency power source supplied between the first unbalanced terminal and the second unbalanced terminal; 　　the substrate holding portion holding the substrate; and The drive mechanism that rotates the substrate holding portion, the high-frequency power supply, can change the frequency of the high-frequency, and adjust the relationship by changing the frequency.

A second aspect of the present invention relates to a plasma processing method. The foregoing plasma processing method is a plasma processing method for processing a substrate in a plasma processing apparatus. The plasma processing apparatus includes: 　　 having a first unbalanced terminal, a first 2 The balun of the unbalanced terminal, the first balanced terminal and the second balanced terminal; 　　 grounded vacuum container; 　　 electrically connected to the first electrode of the aforementioned first balanced terminal; 　　 electrically connected to the aforementioned second balanced terminal The second electrode; 　　 affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode to adjust the reactor, 　　 produced is supplied to the first unbalanced terminal and the second High-frequency high-frequency power supply between balanced terminals; 　　the substrate holding portion holding the substrate; and the driving mechanism for rotating the substrate holding portion, 　　characteristics include: 　　adjusted in such a manner that the aforementioned relationship can be adjusted The frequency of the project; and after the above-mentioned project, the above-mentioned substrate is processed while rotating by the driving mechanism.

Hereinafter, the present invention will be described with reference to the accompanying drawings through exemplary embodiments thereof.

FIG. 1 schematically shows the configuration of the plasma processing apparatus 1 according to the first embodiment of the present invention. The plasma processing apparatus of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balanced unbalanced conversion circuit) 103, a vacuum container 110, a first electrode 106, and a second electrode 111. Or, it may be understood that the plasma processing apparatus 1 includes a balun 103 and a body 10, and the body 10 includes a vacuum container 110, a first electrode 106, and a second electrode 111. The body 10 has a first terminal 251 and a second terminal 252. The first electrode 106 may be arranged to separate the vacuum space and the external space together with the vacuum vessel 110 (that is, constitute a part of the vacuum partition), or may be arranged in the vacuum vessel 110. The second electrode 111 may be arranged to separate the vacuum space and the external space together with the vacuum vessel 110 (that is, form a part of the vacuum partition), or may be arranged in the vacuum vessel 110.

The balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103 . The vacuum container 110 is composed of a conductor and is grounded.

In the first embodiment, the first electrode 106 is a cathode, and holds the target 109. The target 109 is, for example, an insulator material or a conductor material. Furthermore, in the first embodiment, the second electrode 111 is an anode, and holds the substrate 112. The plasma processing apparatus 1 of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering of the target 109. The first electrode 106 is electrically connected to the first balanced terminal 211, and the second electrode 111 is electrically connected to the second balanced terminal 212. The first electrode 106 and the first balanced terminal 211 are electrically connected to mean that a current can flow between the first electrode 106 and the first balanced terminal 211, and the first electrode 106 and the first balanced terminal 211 are configured between There is a current path. Similarly, in this specification, a and b are electrically connected to mean that a current path is formed between a and b in such a way that current can flow between a and b.

The above configuration can also be understood as that the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211, The second terminal 252 is electrically connected to the second balanced terminal 212.

In the first embodiment, the first electrode 106 and the first balanced terminal 211 (first terminal 251) are electrically connected via the blocking capacitor 104. The blocking capacitor 104 blocks the direct current between the first balanced terminal 211 and the first electrode 106 (or between the first balanced terminal 211 and the second balanced terminal 212). Instead of the blocking capacitor 104, the impedance matching circuit 102 described below blocks the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202. The first electrode 106 can be supported by the vacuum container 110 via the insulator 107. The second electrode 111 may be supported by the vacuum container 110 via the insulator 108. Or, an insulator 108 may be arranged between the second electrode 111 and the vacuum container 110.

The plasma processing apparatus 1 may further include a high-frequency power source 101 and an impedance matching circuit 102 disposed between the high-frequency power source 101 and the balun 103. The high-frequency power supply 101 supplies high-frequency (high-frequency current, high-frequency voltage, high-frequency power) via the impedance matching circuit 102 between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103. In other words, the high-frequency power supply 101 supplies high-frequency (high-frequency current, high-frequency voltage, and high-frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. Or, it can be understood that the high-frequency power supply 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the impedance matching circuit 102 and the balun 103.

In the internal space of the vacuum container 110, a gas (for example, Ar, Kr, or Xe gas) is supplied via a gas supply unit (not shown) provided in the vacuum container 110. In addition, between the first electrode 106 and the second electrode 111, the high frequency power is supplied by the high frequency power source 101 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104. As a result, plasma is generated between the first electrode 106 and the second electrode 111, and a self-bias voltage is generated on the surface of the target 109. The ions in the plasma collide with the surface of the target 109 and are emitted from the target 109 Particles of the material that constitutes that. Then, a film is formed on the substrate 112 by using the particles.

FIG. 2A shows a configuration example of the balun 103. The balun 103 shown in FIG. 2A includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 that connects the second unbalanced terminal 202 and the second balanced terminal 212. The first coil 221 and the second coil 222 are the same number of coils and share an iron core.

FIG. 2B shows another configuration example of the balun 103. The balun 103 shown in FIG. 2B includes a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 connecting the second unbalanced terminal 202 and the second balanced terminal 212 . The first coil 221 and the second coil 222 are the same number of coils and share an iron core. In addition, the balun 103 shown in FIG. 2B further includes the third coil 223 and the fourth coil 224, and the third coil 223 and the fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212. It is configured such that the voltage of the connection node 213 of the third coil 223 and the fourth coil 224 is the midpoint between the voltage of the first balanced terminal 211 and the voltage of the second balanced terminal 212. The third coil 223 and the fourth coil 224 are the same number of coils and share an iron core. The connection node 213 can also be grounded, connected to the vacuum container 110, or floated.

3, the function of the balun 103 will be described. Let the current flowing in the first unbalanced terminal 201 be I1, the current flowing in the first balanced terminal 211 be I2, the current flowing in the second unbalanced terminal 202 be I2', and the current I2 flow The current to ground is set to I3. I3=0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit to ground is the best. I3=I2, that is, when all the current I2 flowing through the first balanced terminal 211 flows to the ground, the isolation performance of the balanced circuit to the ground is the worst. The index ISO indicating the degree of such isolation performance can be given by the following formula. Under this definition, the absolute value of the ISO value is larger, and the isolation performance is better.

In FIG. 3, Rp-jXp indicates that the first electrode 106 and the second electrode 111 are viewed from the sides of the first balanced terminal 211 and the second balanced terminal 212 in a state where plasma is generated in the internal space of the vacuum container 110 Impedance (including the reactance blocking the capacitor 104) at the side (the side of the body 10). Rp represents the resistance component, and -Xp represents the reactance component. In addition, in FIG. 3, X is a reactance component (inductance component) indicating the impedance of the first coil 221 of the balun 103. ISO is relevant for X/Rp.

Fig. 4 shows an example of the relationship between the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The present inventors found that the configuration in which high frequency power is supplied from the high-frequency power source 101 to the first electrode 106 and the second electrode 111 via the balun 103. In particular, in this configuration, 1.5≦X/Rp≦5000 is advantageous for The potential of the plasma (plasma potential) formed in the internal space of the vacuum container 110 (the space between the first electrode 106 and the second electrode 111) is insensitive to the state of the inner surface of the vacuum container 110. Here, the plasma potential has a dull effect on the state of the inner surface of the vacuum container 110, which means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 is equivalent to -10.0dB≧ISO≧-80dB.

5A to 5D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5≦X/Rp≦5000. FIG. 5A is a diagram showing the plasma potential and the cathode potential in a state where no film is formed on the inner surface of the vacuum container 110. FIG. 5B is a diagram showing the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. 5C is a diagram showing the plasma potential and the cathode potential in the state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 5D is a diagram showing the plasma potential and the cathode potential in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. As can be understood from FIGS. 5A to 5D, conforming to 1.5≦X/Rp≦5000 is advantageous for stabilizing the plasma potential in various states for the inner surface of the vacuum container 110.

6A to 6D show the results of the simulation of the plasma potential and the potential of the first electrode 106 (cathode potential) when 1.5≦X/Rp≦5000. 6A is a diagram showing the plasma potential and the cathode potential in a state where no film is formed on the inner surface of the vacuum container 110. FIG. 6B is a diagram showing the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. 6C is a diagram showing the plasma potential and the cathode potential in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. 6D is a plasma potential and a cathode potential showing a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. FIG. It can be understood from FIGS. 6A to 6D that when 1.5≦X/Rp≦5000 is not met, the plasma potential will vary according to the state of the inner surface of the vacuum container 110.

Here, in both the case of X/Rp>5000 (for example, X/Rp=∞) and the case of X/Rp<1.5 (for example, X/Rp=1.0, X/Rp=0.5), the plasma potential will easily depend on The state of the inner surface of the vacuum container 110 changes. When X/Rp>5000, a film is not formed on the inner surface of the vacuum container 110, and discharge occurs only between the first electrode 106 and the second electrode 111. However, in the case of X/Rp>5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential will sensitively react to this, resulting in the results shown in the examples shown in FIGS. 6A to 6D. On the other hand, when X/Rp<1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (which is caused by the electrical characteristics of the film formed on the inner surface) The effect of is significant, and the plasma potential will vary depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

Referring to FIG. 7, an example of a determination method of Rp-jXp (the only person who actually wants to know is Rp) is shown. First, the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the body 10. Then, the second terminal 252 (second electrode 111) of the body 10 is grounded. In this state, high-frequency power is supplied from the high-frequency power source 101 to the first terminal 251 of the main body 10 via the impedance matching circuit 102. In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently constituted by the coils L1 and L2 and the variable capacitors VC1 and VC2. The plasma can be generated by adjusting the capacitance values of the variable capacitors VC1 and VC2. In the state where the plasma is stable, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 (the side of the first electrode 106 and the second electrode 111) at the time of plasma generation. The impedance of the impedance matching circuit 102 at this time is Rp+jXp.

Therefore, Rp-jXp can be obtained based on the impedance Rp+jXp of the impedance matching circuit 102 at the time of impedance matching (the actual knowledge is Rp only). Rp-jXp is other, which can be obtained by simulation based on design data, for example.

Based on the Rp thus obtained, X/Rp can be specified. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5≦X/Rp≦5000.

FIG. 8 schematically shows the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. The plasma processing apparatus 1 of the second embodiment is operable as an etching apparatus for etching the substrate 112. In the second embodiment, the first electrode 106 is a cathode and holds the substrate 112. Furthermore, in the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 of the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104. In other words, in the plasma processing apparatus 1 of the second embodiment, the blocking capacitor 104 is arranged in the electrical connection path between the first electrode 106 and the first balanced terminal 211.

FIG. 9 schematically shows the configuration of the plasma processing apparatus 1 according to the third embodiment of the present invention. The plasma processing apparatus 1 of the third embodiment is a modified example of the plasma processing apparatus 1 of the first embodiment, and further includes at least one of a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. In the example shown in FIG. 9, the plasma processing apparatus 1 is a drive mechanism 114 including both a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. Between the vacuum container 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition wall may be provided.

Similarly, the plasma processing apparatus 1 of the second embodiment may further include at least one of a mechanism for raising and lowering the first electrode 106 and a mechanism for rotating the second electrode 106.

FIG. 10 schematically shows the configuration of the plasma processing apparatus 1 according to the fourth embodiment of the present invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the fourth embodiment is that the first to third embodiments can be followed. The plasma processing apparatus 1 includes: a first balun 103, a second balun 303, a vacuum container 110, a first electrode 106 and a second electrode 135 constituting the first group, and a first electrode 141 and a second electrode constituting the second group 2electrode 145. Or, it can also be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 106 and a second electrode constituting the first group 135. The first electrode 141 and the second electrode 145 constituting the second group. The body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and to the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The balance circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and to the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded.

The first electrode 106 of the first group is the holding target 109. The target 109 is, for example, an insulator material or a conductor material. The second electrode 135 of the first group is arranged around the first electrode 106. The first electrode 106 of the first group is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 135 of the first group is the second balanced terminal electrically connected to the first balun 103 212. The first electrode 141 of the second group is the holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is the second balanced terminal electrically connected to the second balun 303 412.

The above configuration is understood that the first electrode 106 of the first group is electrically connected to the first terminal 251, the second electrode 135 of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically The first balanced terminal 211 of the first balun 103 is connected, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is The first balanced terminal 411 of the second balun 303 is electrically connected, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 106 of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the blocking capacitor 104. The blocking capacitor 104 is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 106 of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. Instead of the blocking capacitor 104, the first impedance matching circuit 102 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. The first electrode 106 and the second electrode 135 of the first group can be supported by the vacuum container 110 via the insulator 132.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303) Break DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via the insulator 142.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power supply 101 supplies high-frequency between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103 via the first impedance matching circuit 102. In other words, the first high-frequency power source 101 supplies high-frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103, and the blocking capacitor 104. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 106 and the second electrode 135 of the first group constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the supply of high frequency from the first high-frequency power source 101, in the state where plasma is generated in the internal space of the vacuum vessel 110, the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come The impedance when looking at the side of the first electrode 106 and the second electrode 135 (the side of the body 10) of the first group is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, compliance with 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110.

In addition, with the supply of high frequency from the second high-frequency power supply 301, in the state where plasma is generated in the internal space of the vacuum vessel 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 141 and the second electrode 145 of the second group (side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, compliance with 1.5≦X2/Rp2≦5000 is beneficial to stabilize the potential of the plasma formed in the internal space of the vacuum container 110.

FIG. 11 schematically shows the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. The device 1 of the fifth embodiment is configured to have additional drive mechanisms 114 and 314 compared to the plasma processing device 1 of the fourth embodiment. The drive mechanism 114 may include at least one of a mechanism that raises and lowers the first electrode 141 and a mechanism that rotates the first electrode 141. The drive mechanism 314 can be provided with a mechanism for raising and lowering the second electrode 145.

FIG. 12 schematically shows the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. The plasma processing apparatus of the sixth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. As the matters not mentioned in the sixth embodiment, the first to fifth embodiments can be followed. The plasma processing apparatus 1 of the sixth embodiment includes a plurality of first high-frequency supply units and at least one second high-frequency supply unit. One of the plurality of first high-frequency supply units may include the first electrode 106a, the second electrode 135a, and the first balun 103a. The other one of the plurality of first high-frequency supply units may include the first electrode 106b, the second electrode 135b, and the first balun 103b. Here, an example in which the plural first high-frequency supply units are configured by two high-frequency supply units will be described. In addition, the two high-frequency supply units and their associated components are distinguished from each other by the subscripts a and b. Similarly, the two targets are distinguished from each other by subscripts a and b.

In other viewpoints, the plasma processing apparatus 1 includes: a plurality of first baluns 103a, 103b, a second balun 303, a vacuum container 110, a first electrode 106a and a second electrode 135a, a first electrode 106b, and a second The electrode 135b, the first electrode 141, and the second electrode 145. Or, it may be understood that the plasma processing apparatus 1 includes: a plurality of first baluns 103a, 103b, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 106a, and a second electrode 135a , The first electrode 106b and the second electrode 135b, the first electrode 141 and the second electrode 145. The body 10 includes first terminals 251a, 251b, second terminals 252a, 252b, third terminals 451, and fourth terminals 452.

The first balun 103a has a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a. An unbalanced circuit is connected to the side of the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and to the side of the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a The balance circuit is connected. The first balun 103b has a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b. An unbalanced circuit is connected to the side of the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and to the side of the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b The balance circuit is connected.

The second balun 303 may have the same configuration as the first baluns 103a and 103b. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and to the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded.

The first electrodes 106a and 106b hold the targets 109a and 109b, respectively. The targets 109a, 109b are, for example, insulator materials or electrical conductor materials. The second electrodes 135a and 135b are arranged around the first electrodes 106a and 106b, respectively. The first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first baluns 103a and 103b, respectively, and the second electrodes 135a and 135b are electrically connected to the first baluns 103a and 103b, respectively The second balanced terminals 212a and 212b.

The first electrode 141 is the holding substrate 112. The second electrode 145 is arranged around the first electrode 141. The first electrode 141 is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 is the second balanced terminal 412 electrically connected to the second balun 303.

The above configuration is understood that the first electrodes 106a and 106b are electrically connected to the first terminals 251a and 251b, the second electrodes 135a and 135b are electrically connected to the second terminals 252a and 252b, and the first terminal 251a and 251b is electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, respectively, and the second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b, respectively Composition. In addition, the above configuration is understood that the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrodes 106a, 106b and the first balanced terminals 211a, 211b (first terminals 251a, 251b) of the first baluns 103a, 103b can be electrically connected via blocking capacitors 104a, 104b, respectively. The blocking capacitors 104a, 104b are between the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first electrodes 106a, 106b (or the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first 2 Between balanced terminals 212a and 212b) DC current is interrupted. Instead of blocking capacitors 104a, 104b, the first impedance matching circuits 102a, 102b will block the flow between the first unbalanced terminals 201a, 201b and the second unbalanced terminals 202a, 202b flowing in the first baluns 103a, 103b The way of the DC current is constituted. Alternatively, the blocking capacitors 104a and 104b may be disposed between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (second terminals 252a and 252b) of the first baluns 103a and 103b. The first electrodes 106a and 106b and the second electrodes 135a and 135b can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 blocks the direct current between the first balanced terminal 411 and the first electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Alternatively, the blocking capacitor 304 may be disposed between the second electrode 145 and the second balanced terminal 412 (fourth terminal 452) of the second balun 303. The first electrode 141 and the second electrode 145 can be supported by the vacuum container 110 via the insulator 142.

The plasma processing apparatus 1 may include: a plurality of first high-frequency power sources 101a, 101b, and a first unit disposed between the plurality of first high-frequency power sources 101a, 101b and the plurality of first baluns 103a, 103b, respectively Impedance matching circuits 102a, 102b. The first high-frequency power sources 101a and 101b supply high-frequency to the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b via the first impedance matching circuits 102a and 102b, respectively between. In other words, the first high-frequency power sources 101a and 101b supply high frequencies to the first electrodes 106a, 106b and the second electrode via the first impedance matching circuits 102a and 102b, the first baluns 103a and 103b, and the blocking capacitors 104a and 104b, respectively Between 135a and 135b. Or, the first high-frequency power sources 101a and 101b supply high-frequency to the first terminals 251a and 251b and the second terminals 252a and 252b of the body 10 through the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. between.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.

FIG. 13 schematically shows the configuration of the plasma processing apparatus 1 according to the seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the seventh embodiment is that the first to sixth embodiments can be followed. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 105a and a second electrode 105b that constitute the first group, and a first electrode 141 and a second electrode that constitute the second group 2electrode 145. Or, it may be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode constituting the first group 105b. The first electrode 141 and the second electrode 145 constituting the second group. The body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and to the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The balance circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and to the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded.

The first electrode 105a of the first group holds the first target 109a, and faces the space on the side of the substrate 112 across the first target 109a. The second electrode 105b of the first group is arranged beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 across the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105a of the first group is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105b of the first group is the second balanced terminal electrically connected to the first balun 103 212.

The first electrode 141 of the second group is the holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is the second balanced terminal electrically connected to the second balun 303 412.

The above configuration is understood that the first electrode 105a of the first group is electrically connected to the first terminal 251, the second electrode 105b of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected The first balanced terminal 211 of the first balun 103 is connected, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is The first balanced terminal 411 of the second balun 303 is electrically connected, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the blocking capacitor 104a. The blocking capacitor 104a is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 105a of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. The second electrode 105b of the first group and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the blocking capacitor 104b. The blocking capacitor 104b is shielded between the second balanced terminal 212 of the first balun 103 and the second electrode 105b of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. The first electrode 105a and the second electrode 105b of the first group can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303) Break DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high-frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a, 104b. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 105 a and the second electrode 105 b of the first group constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the supply of high frequency from the first high-frequency power source 101, in the state where plasma is generated in the internal space of the vacuum vessel 110, the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come The impedance when looking at the side of the first electrode 105a and the second electrode 105b of the first group (the side of the body 10) is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, compliance with 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110.

In addition, with the supply of high frequency from the second high-frequency power supply 301, in the state where plasma is generated in the internal space of the vacuum vessel 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 127 and the second electrode 130 of the second group (side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, compliance with 1.5≦X2/Rp2≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110.

The plasma processing apparatus 1 of the seventh embodiment may further include at least one of a mechanism for raising and lowering the first electrode 141 constituting the second group and a mechanism for rotating the first electrode 141 constituting the second group. In the example shown in FIG. 13, the plasma processing apparatus 1 is a drive mechanism 114 that includes both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. In addition, in the example shown in FIG. 13, the plasma processing apparatus 1 is provided with a mechanism 314 that raises and lowers the second electrode 145 constituting the second group. Between the vacuum container 110 and the drive mechanisms 114 and 314, a bellows constituting a vacuum partition wall may be provided.

The function of the first balun 103 of the plasma processing apparatus 1 of the seventh embodiment shown in FIG. 13 will be described with reference to FIG. 14. Let the current flowing in the first unbalanced terminal 201 be I1, the current flowing in the first balanced terminal 211 be I2, the current flowing in the second unbalanced terminal 202 be I2', and the current I2 flow The current to ground is set to I3. I3=0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit to ground is the best. I3=I2, that is, when all the current I2 flowing through the first balanced terminal 211 flows to the ground, the isolation performance of the balanced circuit to the ground is the worst. The index ISO indicating the degree of such isolation performance is the same as in the first to fifth embodiments, and the following formula can be given. Under this definition, the absolute value of the ISO value is larger, and the isolation performance is better.

In FIG. 14, Rp-jXp (=Rp/2-jXp/2+Rp/2-jXp/2) indicates that in the state where plasma is generated in the internal space of the vacuum container 110, the 2 The impedance of the side of the balanced terminal 212 when looking at the side of the first electrode 105a and the second electrode 105b (the side of the body 10) (including the reactance blocking the capacitors 104a and 104b). Rp represents the resistance component, and -Xp represents the reactance component. In addition, in FIG. 14, X is a reactance component (inductance component) indicating the impedance of the first coil 221 of the first balun 103. ISO is relevant for X/Rp.

FIG. 4 referred to in the description of the first embodiment is an example showing the relationship between the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The relationship of FIG. 4 is also established in the seventh embodiment. The present inventors found that in the seventh embodiment, compliance with 1.5≦X/Rp≦5000 is also advantageous in order to make the internal space formed in the vacuum container 110 (the space between the first electrode 105a and the second electrode 105b) The electric potential of the plasma (plasma potential) is insensitive to the state of the inner surface of the vacuum container 110. Here, the plasma potential has a dull effect on the state of the inner surface of the vacuum container 110, which means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 is equivalent to -10.0dB≧ISO≧-80dB.

15A to 15D show the results of simulating the plasma potential when 1.5≦X/Rp≦5000, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential). 15A is a diagram showing the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110 . 15B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110 . 15C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 15D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in the state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110 ). As can be understood from FIGS. 15A to 15D, compliance with 1.5≦X/Rp≦5000 is beneficial to stabilize the plasma potential of the inner surface of the vacuum container 110 in various states.

16A to 16D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when 1.5≦X/Rp≦5000. FIG. 16A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110 . 16B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. . 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in the state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 16D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110 ). It can be understood from FIGS. 16A to 16D that when 1.5≦X/Rp≦5000 is not satisfied, the plasma potential will change according to the state of the inner surface of the vacuum container 110.

Here, in both the case of X/Rp>5000 (for example, X/Rp=∞) and the case of X/Rp<1.5 (for example, X/Rp=1.16, X/Rp=0.87), the plasma potential will easily depend on The state of the inner surface of the vacuum container 110 changes. When X/Rp>5000, in a state where the film is not formed on the inner surface of the vacuum container 110, discharge occurs only between the first electrode 105a and the second electrode 105b. However, in the case of X/Rp>5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential will sensitively react to this, resulting in the results as exemplified in FIGS. 16A to 16D. On the other hand, when X/Rp<1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (which is caused by the electrical characteristics of the film formed on the inner surface) The effect of is significant, and the plasma potential will vary depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

FIG. 17 schematically shows the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. The plasma processing apparatus of the eighth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the eighth embodiment is that the first to seventh embodiments can be followed. The plasma processing apparatus 1 of the eighth embodiment includes a balun (first balun) 103, a vacuum container 110, a first electrode 105a, and a second electrode 105b. Or, the plasma processing apparatus 1 may be understood to include a balun 103 and a body 10, and the body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode 105b. The body 10 has a first terminal 251 and a second terminal 252.

The first electrode 105a can have a first holding surface HS1 that can hold a first target 109a as a first member, and the second electrode 105b can have a second holding surface HS2 that can hold a second target 109b as a second member. The first holding surface HS1 and the second holding surface HS2 are planes PL that can belong to one.

The plasma processing apparatus 1 of the eighth embodiment may further include the second balun 303, the third electrode 141, and the fourth electrode 145. In other words, the plasma processing apparatus 1 may include the first balun 103, the second balun 303, the vacuum container 110, the first electrode 105a, the second electrode 105b, the third electrode 141, and the fourth electrode 145. Or, it can be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 105a, a second electrode 105b, and a third electrode 141 and 4th electrode 145. The body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and to the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The balance circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a third unbalanced terminal 401, a fourth unbalanced terminal 402, a third balanced terminal 411, and a fourth balanced terminal 412. An unbalanced circuit is connected to the side of the third unbalanced terminal 401 and the fourth unbalanced terminal 402 of the second balun 303, and to the side of the third balanced terminal 411 and the fourth balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded. The baluns 103 and 303 can have the structures described in FIGS. 2A and 2B (FIG. 14 ), for example.

The first electrode 105a holds the first target 109a, and faces the space on the side of the substrate 112 to be processed via the first target 109a. The second electrode 105b is disposed beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 to be processed via the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105 a is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105 b is the second balanced terminal 212 electrically connected to the first balun 103.

The third electrode 141 is the holding substrate 112. The fourth electrode 145 can be arranged around the third electrode 141. The third electrode 141 is the first balanced terminal 411 electrically connected to the second balun 303, and the fourth electrode 145 is the second balanced terminal 412 electrically connected to the second balun 303.

The above configuration is understood that the first electrode 105a is electrically connected to the first terminal 251, the second electrode 105b is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balun 103 The first balanced terminal 211 and the second terminal 252 are electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the third electrode 141 is electrically connected to the third terminal 451, the fourth electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the first path PTH1. Reactance 511a can be arranged in the first path PTH1. In other words, the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the reactance 511a. Reactance 511a can include a capacitor that can be used between first balanced terminal 211 of first balun 103 and first electrode 105a (or first balanced terminal 211 and second balanced terminal 212 of first balun 103 Between) blocking the function of the blocking current of the DC current. The second electrode 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the second path PTH2. Reactance 511b can be arranged in the second path PTH2. In other words, the second electrode 105b and the second balanced terminal 212 (third terminal 252) of the first balun 103 can be electrically connected via the reactance 511b. Reactance 511b can include a capacitor that can be used between the second balanced terminal 212 of the first balun 103 and the second electrode 105b (or the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 Between) blocking the function of the blocking current of the DC current. The first electrode 105a and the second electrode 105b can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The plasma processing apparatus 1 may include a reactance 521a disposed between the first electrode 105a and the ground. The plasma processing apparatus 1 may include a reactance 521b disposed between the second electrode 105b and the ground. The plasma processing apparatus 1 may include a reactance 530 connecting the first path PTH1 and the second path PTH2.

In one configuration example, the plasma processing apparatus 1 includes an adjustment reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, including (a) Reactances 511a, (b) arranged in the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, (b) reactances 521a, (c) arranged between the first electrode 105a and ground are arranged in the second connection Reactance 511b of the second path PTH2 of the balanced terminal 212 and the second electrode 105b, (d) reactance 521b arranged between the second electrode 105b and the ground, and (e) connecting the first path PTH1 and the second path PTH2 At least one reactance 530.

The third electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 blocks the direct current between the first balanced terminal 411 and the third electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The third electrode 141 and the fourth electrode 145 can be supported by the vacuum container 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 that generates high-frequency power supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. The high-frequency power supply 101 can change the frequency of high-frequency supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. By changing the frequency, the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted. Or, by changing the frequency, the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted.

Therefore, by adjusting the frequency, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. Or, by adjusting the frequency, the balance between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. In this way, the relationship between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Alternatively, the balance between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Such a configuration is advantageous, for example, in order to make the replacement timing of the first target 109a and the replacement timing of the second target 109b the same, and reduce the downtime of the plasma processing apparatus 1. Furthermore, by adjusting the frequency, the thickness distribution of the film formed on the substrate 112 can be adjusted.

The plasma processing apparatus 1 may further include: a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power supply 101 supplies high-frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the first path PTH1. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103, the first electrode 105a, and the second electrode 105b constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high-frequency power supply 301 supplies high-frequency between the third electrode 141 and the fourth electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303, the third electrode 141, and the fourth electrode 145 constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a drive mechanism 114 that rotates the substrate 112 by rotating the third electrode 141 that functions as a substrate holding portion. The drive mechanism 114 may include a lifting mechanism that raises and lowers the substrate 112 by raising and lowering the third electrode 141 that functions as a substrate holding portion. Between the vacuum container 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition wall may be provided.

From the sides of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 in the state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the first high-frequency power source 101 The impedance when looking at the side of the first electrode 105a and the second electrode 105b (the side of the body 10) is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, compliance with 1.5≦X1/Rp1≦5000 is particularly advantageous in order to stabilize the potential of the plasma formed in the internal space of the vacuum container 110. However, meeting the condition of 1.5≦X/Rp1≦5000 is not necessary in the eighth embodiment, and it is desirable to pay attention to favorable conditions. In the eighth embodiment, by providing the balun 103, the potential of the plasma can be stabilized more than when the balun 103 is not provided. Moreover, by providing a high-frequency power source 101 that can change the frequency of the generated high frequency, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. In addition, by rotating the substrate 112 by the drive mechanism 114 while forming a film on the substrate 112, the thickness variation of the film in the surface of the substrate 112 can be reduced.

In addition, from the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 in the state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the second high-frequency power supply 301 The impedance when viewing the side of the third electrode 141 and the fourth electrode 145 (the side of the body 10) is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, compliance with 1.5≦X2/Rp2≦5000 is particularly advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110. However, meeting the condition of 1.5≦X/Rp2≦5000 is not necessary in the eighth embodiment, and it is desirable to pay attention to favorable conditions.

Hereinafter, the ninth to twelfth embodiments in which the plasma processing apparatus 1 of the eighth embodiment is embodied will be described with reference to FIGS. 18 to 23, 28A to 28C, and 29A to 29E. FIG. 18 schematically shows the configuration of the plasma processing apparatus 1 of the ninth embodiment of the present invention. As for matters not mentioned in the ninth embodiment, it is possible to follow the eighth embodiment. The plasma processing apparatus 1 of the ninth embodiment includes at least one of the reactance 511a disposed on the first path PTH1 and the reactance 511b disposed on the second path PTH2. Here, the plasma processing apparatus 1 preferably includes both the reactance 511a disposed in the first path PTH1 and the reactance 511b disposed in the second path PTH2.

The first reactance 511a may include an inductor 601a and a capacitor 602a. The inductor 601a may be disposed between the first balanced terminal 211 (first terminal 251) and the capacitor 602a, or may be disposed between the capacitor 602a and the first electrode 105a. The second reactance 511b may include an inductor 601b and a capacitor 602b. The inductor 601b may be disposed between the second balanced terminal 212 (second terminal 252) and the capacitor 602b, or may be disposed between the capacitor 602b and the second electrode 105b.

The plasma processing apparatus 1 may include a drive mechanism 114 that rotates the substrate 112 by rotating the third electrode 141 that functions as a substrate holding portion. The drive mechanism 114 may include a lifting mechanism that raises and lowers the substrate 112 by raising and lowering the third electrode 141 that functions as a substrate holding portion. Between the vacuum container 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition wall may be provided.

FIG. 22 shows the normalized thickness distribution of the film formed on the substrate 112 when the frequency of the high frequency generated by the high-frequency power source 101 is set to 12.56 MHz in the plasma processing apparatus 1 of the ninth embodiment. 22 shows the normalized thickness of the film formed on the substrate 112 when the frequency of the high frequency generated by the high-frequency power source 101 is set to 13.56 MHz in the plasma processing apparatus 1 of the ninth embodiment. distributed. The horizontal axis is the position in the horizontal direction (the direction parallel to the surface of the substrate 112) of FIG. 18 and represents the distance from the center of the substrate 112. When the frequency of the high frequency generated by the high-frequency power source 101 is 12.56 MHz, the thickness distribution of the film differs greatly on the left and right sides of the center of the substrate 112. On the other hand, when the frequency of the high frequency generated by the high-frequency power source 101 is 13.56 MHz, the symmetry of the thickness distribution of the film is high on the left and right sides of the center of the substrate 112. The balance between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b is that the frequency of the high frequency generated by the high-frequency power supply 101 is 13.56MHz than the frequency of the high frequency generated by the high-frequency power supply 101. It is better at 12.56MHz.

FIG. 23 shows an example of the voltage of the first electrode 105a (first voltage) and the second electrode 105b when the frequency of the high frequency generated by the high-frequency power source 101 is changed in the plasma processing apparatus 1 of the ninth embodiment. Voltage (second voltage). By changing the frequency of the high frequency generated by the high-frequency power supply 101, the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted. Alternatively, by changing the frequency of the high frequency generated by the high-frequency power source 101, the relationship between the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted. For example, the frequency of the high frequency generated by the high-frequency power source 101 can be adjusted so that the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) become equal. Thereby, the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be made the same. This is advantageous, for example, to make the replacement timing of the first target 109a and the replacement timing of the second target 109b the same, and reduce the downtime of the plasma processing apparatus 1.

FIGS. 28A to 28C are examples showing that in the plasma processing apparatus 1 of the ninth embodiment, the TS distance of the distance between the substrate 112 and the targets 109a and 10b (distance in the vertical direction) is set to 120 mm, 105 mm, and 100 mm. The thickness distribution of the film formed on the substrate 112. Here, FIG. 28A shows the thickness distribution of the film formed on the substrate 112 when the TS distance is 120 mm, FIG. 28B shows the thickness distribution of the film formed on the substrate 112 when the TS distance is 105 mm, and FIG. 28C is The thickness distribution of the film formed on the substrate 112 when the TS distance is 100 mm. The formation of the film on the substrate 112 is performed by the drive mechanism 114 while rotating the substrate 112.

FIGS. 29A to 29E are examples showing that in the plasma processing apparatus 1 of the ninth embodiment, the frequencies of high frequencies generated by the high-frequency power source 101 are set to 12.56MHz, 13.06MHz, 13.56MHz, 14.06MHz, 14.56MHz The thickness distribution of the film formed on the substrate 112 at this time. Here, FIG. 29A shows the thickness distribution of the film formed on the substrate 112 when the high-frequency frequency is 12.56 MHz, and FIG. 29B shows the film formed on the substrate 112 when the high-frequency frequency is 13.06 MHz. The thickness distribution, FIG. 29C shows the thickness distribution of the film formed on the substrate 112 when the high-frequency frequency is 13.56 MHz. FIG. 29D shows the thickness distribution of the film formed on the substrate 112 when the high-frequency frequency is 14.06 MHz, and FIG. 29E shows the thickness distribution of the film formed on the substrate 112 when the high-frequency frequency is 14.56 MHz.

In FIGS. 29A to 29E, when the frequency of the high frequency generated by the high-frequency power source 101 is 14.06 MHz, the thickness variation of the film formed on the substrate 112 is minimized. As can be seen from the results shown in FIG. 23, when the frequency of the high frequency generated by the high-frequency power source 101 is near 13.4 MHz, the voltage applied to the first electrode 105a and the voltage applied to the second electrode 105b are approximately equal. On the other hand, as can be seen from the results shown in FIGS. 29A to 29E, when the frequency of the high frequency generated by the high-frequency power source 101 is 14.06 MHz, the thickness variation of the film formed on the substrate 112 is minimized. It can be understood from this that, when the substrate 112 is rotated, when the voltage applied to the first electrode 105a and the voltage applied to the second electrode 105b are substantially equal, the thickness deviation of the film that is not necessarily formed on the substrate 112 is minimized. Therefore, when forming a film while rotating the substrate 112, the frequency of the high frequency generated by the high-frequency power source 101 should be determined so that the thickness variation of the film formed on the substrate 112 is minimized. The frequency of the high frequency generated by the high-frequency power source 101 can be determined by experiment or by simulation.

FIG. 19 schematically shows the configuration of the plasma processing apparatus 1 according to the tenth embodiment of the present invention. As the matters not mentioned in the tenth embodiment, the eighth embodiment can be followed. The plasma processing apparatus 1 of the tenth embodiment includes at least one reactance 521a disposed between the first electrode 105a and the ground, and a reactance 521b disposed between the second electrode 105b and the ground. The reactance 521a may include, for example, an inductor 607a and a capacitor 606a. Reactance 521b may include inductor 607b and capacitor 606b, for example.

The plasma processing apparatus 1 may further include: a reactor 511a (in this case, an inductor 603a and a capacitor 602a) arranged in the first path PTH1, and a reactor 511b (in this case, an inductor 603b) arranged in the second path PTH2 , Capacitor 602b).

FIG. 20 schematically shows the configuration of the plasma processing apparatus 1 according to the eleventh embodiment of the present invention. As for matters not mentioned in the eleventh embodiment, it is possible to follow the eighth embodiment. The plasma processing apparatus 1 of the eleventh embodiment is provided with an inductor 608 as a reactance 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include: a reactor 511a (in this example, an inductor 603a and a capacitor 602a) arranged in the first path PTH1, and a reactor 511b (in this case, an inductor) arranged in the second path PTH2 603b, capacitor 602b).

FIG. 21 schematically shows the configuration of the plasma processing apparatus 1 of the twelfth embodiment of the present invention. As the matters not mentioned in the twelfth embodiment, the eighth embodiment can be followed. The plasma processing apparatus 1 of the twelfth embodiment is provided with a capacitor 609 as a variable reactor 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include: a reactor 511a (in this example, an inductor 603a and a capacitor 602a) arranged in the first path PTH1, and a reactor 511b (in this example, an inductor 603b) arranged in the second path PTH2 , Capacitor 602b).

Hereinafter, the operation of adjusting the frequency of the high frequency generated by the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b will be described with reference to FIGS. 24 to 27. FIG. 24 schematically shows the configuration of the plasma processing apparatus 1 according to the thirteenth embodiment of the present invention. The plasma processing apparatus 1 of the thirteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the ninth embodiment shown in FIG. 18. The control unit 700 adjusts the frequency of the high frequency generated by the high-frequency power source 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b can each form a target value. For example, the control unit 700 generates the frequency of adjusting the high frequency generated by the high-frequency power source 101 such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b can form target values V1T and V2T, respectively. The command value CNT. The target values V1T and V2T are predetermined so that the thickness of the film formed on the substrate 112 will be within the target deviation.

FIG. 25 schematically shows the configuration of the plasma processing apparatus 1 according to the fourteenth embodiment of the present invention. The plasma processing apparatus 1 of the fourteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the tenth embodiment shown in FIG. 19. The control unit 700 adjusts the frequency of the high frequency generated by the high-frequency power source 101 such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b can form target values V1T and V2T, respectively. For example, the control unit 700 generates the frequency of adjusting the high frequency generated by the high-frequency power source 101 such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b can form target values V1T and V2T, respectively. The command value CNT. The target values V1T and V2T are predetermined so that the thickness of the film formed on the substrate 112 will be within the target deviation.

FIG. 26 schematically shows the configuration of the plasma processing apparatus 1 according to the fifteenth embodiment of the present invention. The plasma processing apparatus 1 of the fifteenth embodiment has a configuration in which the control unit 700 is added to the plasma processing apparatus 1 of the eleventh embodiment shown in FIG. 20. The control unit 700 adjusts the frequency of the high frequency generated by the high-frequency power source 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b can each form a target value. For example, the control unit 700 generates the frequency of adjusting the high frequency generated by the high-frequency power source 101 such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b can form target values V1T and V2T, respectively. The command value CNT. The target values V1T and V2T are predetermined so that the thickness of the film formed on the substrate 112 will be within the target deviation.

FIG. 27 schematically shows the configuration of the plasma processing apparatus 1 according to the sixteenth embodiment of the present invention. The plasma processing apparatus 1 of the sixteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the twelfth embodiment shown in FIG. 21. The control unit 700 adjusts the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, so that the first voltage V1 and the second voltage V2 can be equal High frequency. For example, the control unit 700 generates the frequency of adjusting the high frequency generated by the high-frequency power source 101 in such a manner that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. The command value CNT. The target values V1T and V2T are predetermined so that the thickness of the film formed on the substrate 112 will be within the target deviation.

In the thirteenth to sixteenth embodiments described with reference to FIGS. 24 to 27, the control unit 700 adjusts the high-frequency power source 101 according to the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The high-frequency frequency. Instead of such a configuration, the control unit 700 may adjust the frequency of the high frequency generated by the high-frequency power source 101 according to the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b. The plasma strength in the vicinity of the first electrode 105a can be detected by a photoelectric conversion device, for example. Similarly, the plasma strength in the vicinity of the second electrode 105b can be detected by a photoelectric conversion device, for example. The control unit 700 may be configured based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b, for example, the plasma strength near the first electrode 105a and the vicinity of the second electrode 105b Adjust the frequency of the high frequency generated by the high-frequency power source 101 in such a way that the plasma strength will be equal.

Next, a plasma processing method as the seventeenth embodiment of the present invention will be explained. As the plasma processing method of the seventeenth embodiment, the substrate 112 is processed in the plasma processing apparatus 1 of any one of the eighth to sixteenth embodiments. The plasma processing method may include adjusting the high frequency generated by the high-frequency power supply 101 so that the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted And the process of rotating the substrate 112 by the drive mechanism 114 while the substrate 112 is rotating. This process may include a process of forming a film on the substrate 112 by sputtering, or a process of etching the substrate 112.

The present invention is not limited to the above-mentioned embodiments, and various changes and modifications can be implemented without departing from the spirit and scope of the present invention. Therefore, in order to make the scope of the present invention public, the following claims are attached.

1‧‧‧Plasma processing device 10‧‧‧Body 101‧‧‧High frequency power supply 102‧‧‧Impedance matching circuit 103‧‧‧Balun 104‧‧‧Blocking capacitor 106‧‧‧First electrode 107, 108‧ ‧‧Insulator 109‧‧‧Target 110‧‧‧Vacuum container 111‧‧‧Second electrode 112‧‧‧‧Substrate 201‧‧‧First unbalanced terminal 202‧‧‧Second unbalanced terminal 211‧‧‧ 1 balanced terminal 212‧‧‧ 2nd balanced terminal 251‧‧‧ 1st terminal 252‧‧‧ 2nd terminal 221‧‧‧ 1st coil 222‧‧‧ 2nd coil 223‧‧‧3rd coil 224‧‧‧ 4th coil 511a, 511b, 521a, 521b, 530‧‧‧ reactance 700‧‧‧ control section

FIG. 1 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. FIG. 2A is a diagram showing a configuration example of a balun. FIG. 2B is a diagram showing another configuration example of the balun. FIG. 3 is a diagram illustrating the function of the balun 103. FIG. 4 is a diagram exemplifying the relationship between currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). FIG. 5A is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 5B is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 5C is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 5D is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 6A is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 6B is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 6C is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 6D is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 7 is a diagram illustrating an Rp-jXp confirmation method. FIG. 8 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. FIG. 9 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the third embodiment of the present invention. FIG. 10 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fourth embodiment of the present invention. FIG. 11 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. FIG. 12 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. FIG. 13 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the seventh embodiment of the present invention. FIG. 14 is a diagram illustrating the function of the balun according to the seventh embodiment of the present invention. FIG. 15A is a graph showing the results of simulating the plasma potential and two cathode potentials when 1.5≦X/Rp≦5000. FIG. 15B is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. FIG. 15C is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. FIG. 15D is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. FIG. 16A is a diagram showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. FIG. 16B is a diagram showing the results of simulating the plasma potential and two cathode potentials when 1.5≦X/Rp≦5000. FIG. 16C is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. FIG. 16D is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000 is not satisfied. FIG. 17 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. FIG. 18 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the ninth embodiment of the present invention. FIG. 19 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the tenth embodiment of the present invention. FIG. 20 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the eleventh embodiment of the present invention. FIG. 21 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the twelfth embodiment of the present invention. FIG. 22 is a diagram showing the normalized thickness distribution of the film formed on the substrate in the plasma processing apparatus 1 of the ninth embodiment of the present invention. 23 is an example showing the voltage of the first electrode (first voltage) and the voltage of the second electrode (second voltage) when the high-frequency frequency is changed in the plasma processing apparatus 1 of the ninth embodiment of the present invention. Change graph. FIG. 24 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the thirteenth embodiment of the present invention. FIG. 25 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fourteenth embodiment of the present invention. FIG. 26 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fifteenth embodiment of the present invention. FIG. 27 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the sixteenth embodiment of the present invention. FIG. 28A is a diagram exemplarily showing the thickness distribution of the film formed on the substrate when the TS distance is 120 mm in the plasma processing apparatus 1 of the ninth embodiment of the present invention. FIG. 28B is a diagram illustrating an example of the thickness distribution of the film formed on the substrate when the TS distance is 105 mm in the plasma processing apparatus 1 of the ninth embodiment of the present invention. FIG. 28C is a diagram exemplarily showing the thickness distribution of the film formed on the substrate when the TS distance is 100 mm in the plasma processing apparatus 1 of the ninth embodiment of the present invention. FIG. 29A is a diagram exemplarily showing the thickness distribution of the film formed on the substrate when the high-frequency frequency is 12.56 MHz in the plasma processing apparatus 1 of the ninth embodiment of the present invention. FIG. 29B is a diagram exemplarily showing the thickness distribution of the film formed on the substrate when the high-frequency frequency is 13.06 MHz in the plasma processing apparatus 1 of the ninth embodiment of the present invention. FIG. 29C is a diagram exemplarily showing the thickness distribution of the film formed on the substrate when the high-frequency frequency is 13.56 MHz in the plasma processing apparatus 1 of the ninth embodiment of the present invention. FIG. 29D is a diagram exemplarily showing the thickness distribution of the film formed on the substrate when the high-frequency frequency is 14.06 MHz in the plasma processing apparatus 1 of the ninth embodiment of the present invention. FIG. 29E is a diagram exemplarily showing the thickness distribution of the film formed on the substrate when the high-frequency frequency is 14.56 MHz in the plasma processing apparatus 1 of the ninth embodiment of the present invention.

1‧‧‧Plasma processing device

10‧‧‧Body

101‧‧‧High frequency power supply

102‧‧‧Impedance matching circuit

103‧‧‧ Barron

105a‧‧‧First electrode

105b‧‧‧Second electrode

109a‧‧‧The first target

109b‧‧‧The second target

110‧‧‧Vacuum container

112‧‧‧ substrate

113‧‧‧Vacuum container

114‧‧‧Drive mechanism

132a, 132b ‧‧‧ insulator

141‧‧‧3rd electrode

142、146‧‧‧Insulator

145‧‧‧ 4th electrode

201‧‧‧1st unbalanced terminal

202‧‧‧ 2nd unbalanced terminal

211‧‧‧ 1st balanced terminal

212‧‧‧ 2nd balanced terminal

251‧‧‧ First terminal

252‧‧‧2nd terminal

301‧‧‧ 2nd high frequency power supply

302‧‧‧The second impedance matching circuit

303‧‧‧ 2nd Barron

401‧‧‧The first unbalanced terminal

402‧‧‧The second unbalanced terminal

411‧‧‧ 1st balanced terminal

412‧‧‧ 2nd balanced terminal

451‧‧‧ Terminal 3

452‧‧‧4th terminal

511a, 511b, 521a, 521b, 530

PTH1‧‧‧ First path

PTH2‧‧‧The second path

HS1‧‧‧The first holding surface

HS2‧‧‧Second holding surface

PL‧‧‧Plane

Claims (16)

A plasma processing apparatus, characterized by comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; electrically connected to the first 1 the first electrode of the balanced terminal; the second electrode electrically connected to the second balanced terminal; affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode Reactor adjustment; generating high-frequency high-frequency power supplied between the first unbalanced terminal and the second unbalanced terminal; a substrate holding portion that holds the substrate; and a driving mechanism that rotates the substrate holding portion, The high-frequency power supply can change the frequency of the high-frequency, and adjust the relationship by changing the frequency. The first electrode holds the first target, and the second electrode holds the second target. The 1 electrode is opposed to the space on the side of the substrate via the first target, the second electrode is opposed to the space via the second target, and the adjustment reactor includes: (a) The reactance arranged in the first path connecting the first balanced terminal and the first electrode, (b) the reactance arranged between the first electrode and the ground, (c) is arranged to connect the second The reactance of the second path of the balanced terminal and the second electrode, (d) the reactance arranged between the second electrode and the ground, and (e) at least 1 of the reactance connecting the first path and the second path Pcs. A plasma processing apparatus according to claim 1 of the patent application, wherein the reactance disposed in the first path includes an inductor, and the reactance disposed in the second path includes an inductor. A plasma processing apparatus according to claim 1 of the patent application, wherein the reactance disposed in the first path includes a capacitor, and the reactance disposed in the second path includes a capacitor. A plasma processing apparatus as claimed in item 1 of the patent application, wherein the reactance disposed between the first electrode and the ground includes a capacitor, and the reactance disposed between the second electrode and the ground is Contains capacitors. A plasma processing apparatus according to claim 1 of the patent application, wherein the reactance disposed between the first electrode and the ground includes an inductor, and the reactance disposed between the second electrode and the ground, It includes an inductor. A plasma processing apparatus, characterized by comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; electrically connected to the first 1 the first electrode of the balanced terminal; the second electrode electrically connected to the second balanced terminal; affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode Reactor adjustment; generating high-frequency high-frequency power supplied between the first unbalanced terminal and the second unbalanced terminal; a substrate holding portion that holds the substrate; and a driving mechanism that rotates the substrate holding portion, The high-frequency power supply can change the frequency of the high-frequency, and adjust the relationship by changing the frequency. The first electrode holds the first target, and the second electrode holds the second target. The 1 electrode is opposed to the space on the side of the substrate via the first target, the second electrode is opposed to the space via the second target, and the adjustment reactor includes connecting the first path and Reactance of the second path, the first path connects the first balanced terminal and the first electrode, and the second path connects the second balanced terminal and the second electrode. For example, the plasma processing device of the 6th scope of the patent application, in which the aforementioned Reactance includes inductors. For example, in the plasma processing device of claim 6, the above-mentioned reactance includes a capacitor. A plasma processing apparatus according to claim 1 further includes a control unit that controls the frequency of the high frequency generated by the high-frequency power source based on the voltage of the first electrode and the voltage of the second electrode. A plasma processing apparatus as claimed in item 1 of the patent application, further comprising: controlling the aforesaid generated by the high-frequency power source based on the plasma strength near the first electrode and the plasma strength near the second electrode The control part of high frequency. A plasma processing apparatus, characterized by comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; electrically connected to the first 1 the first electrode of the balanced terminal; the second electrode electrically connected to the second balanced terminal; affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode Adjust the reactor; generate a high-frequency power supply that is supplied between the first unbalanced terminal and the second unbalanced terminal; A substrate holding portion that holds the substrate; and a driving mechanism that rotates the substrate holding portion, the high-frequency power supply can change the frequency of the high frequency, and the relationship can be adjusted by the change of the frequency to balance from the first When the side of the terminal and the second balanced terminal is viewed from the side of the first electrode and the second electrode, the resistance component between the first balanced terminal and the second balanced terminal is Rp, and the first When the inductance between the balanced terminal and the first balanced terminal is set to X, 1.5≦X/Rp≦5000 is satisfied. The plasma processing apparatus as described in any one of claims 1 to 11, wherein the balun includes a first coil connecting the first unbalanced terminal and the first balanced terminal, and The second coil connecting the second unbalanced terminal and the second balanced terminal. A plasma processing apparatus according to claim 12 of the patent application, wherein the balun further includes: a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal, the first The three coils and the fourth coil are configured such that the voltage of the connection node between the third coil and the fourth coil is the midpoint between the voltage of the first balanced terminal and the voltage of the second balanced terminal. A plasma processing method is a plasma processing method for processing a substrate in a plasma processing device. The plasma processing device includes: A balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; a first electrode electrically connected to the aforementioned first balanced terminal; electrically charged The second electrode connected to the second balanced terminal; an adjustment reactor that affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode, and is generated to be supplied to the first electrode A high-frequency high-frequency power supply between the unbalanced terminal and the second unbalanced terminal; a substrate holding portion that holds the substrate; and a drive mechanism that rotates the substrate holding portion, and its characteristics include: a manner in which the aforementioned relationship is adjusted A process of adjusting the frequency of the high-frequency generated by the high-frequency power source; and a process of processing the substrate while rotating by the driving mechanism after the process, the first electrode holds the first target, The second electrode holds a second target, the first electrode opposes the space on the side of the substrate via the first target, and the second electrode opposes the space through the second target The adjustment reactor includes: (a) a reactance arranged in a first path connecting the first balanced terminal and the first electrode, and (b) a reactance arranged between the first electrode and the ground , (C) is configured to connect to the second The reactance of the second path of the balanced terminal and the second electrode, (d) the reactance arranged between the second electrode and the ground, and (e) at least 1 of the reactance connecting the first path and the second path Pcs. A plasma processing method is a plasma processing method for processing a substrate in a plasma processing apparatus. The plasma processing apparatus includes: a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balance The balun of the terminal; the grounded vacuum container; the first electrode electrically connected to the first balanced terminal; the second electrode electrically connected to the second balanced terminal; the influence applied to the first electrode The adjustment reactor for the relationship between the first voltage and the second voltage applied to the second electrode generates a high-frequency power supply that is supplied between the first unbalanced terminal and the second unbalanced terminal; A substrate holding portion of the substrate; and a driving mechanism for rotating the substrate holding portion, characterized in that it includes: a process of adjusting the frequency of the high frequency generated by the high-frequency power source in such a manner that the relationship is adjusted; and after the process The process of making the substrate rotate while being driven by the driving mechanism, the first electrode holds the first target, and the second electrode holds the second target, The first electrode is opposed to the space on the side of the substrate via the first target, the second electrode is opposed to the space via the second target, and the adjustment reactor includes connecting the first Reactance of a path and a second path, the first path connects the first balanced terminal and the first electrode, and the second path connects the second balanced terminal and the second electrode. A plasma processing method is a plasma processing method for processing a substrate in a plasma processing apparatus. The plasma processing apparatus includes: a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balance The balun of the terminal; the grounded vacuum container; the first electrode electrically connected to the first balanced terminal; the second electrode electrically connected to the second balanced terminal; the influence applied to the first electrode The adjustment reactor for the relationship between the first voltage and the second voltage applied to the second electrode generates a high-frequency power supply that is supplied between the first unbalanced terminal and the second unbalanced terminal; A substrate holding portion of the substrate; and a driving mechanism for rotating the substrate holding portion, characterized in that it includes: a process of adjusting the frequency of the high frequency generated by the high-frequency power source in such a manner that the relationship is adjusted; and after the process , The side of the substrate is driven by the drive mechanism The process of processing while rotating, when looking at the side of the first electrode and the second electrode from the side of the first balanced terminal and the second balanced terminal, between the first balanced terminal and the second balanced terminal When the resistance component between is set to Rp, and the inductance between the first unbalanced terminal and the first balanced terminal is set to X, 1.5≦X/Rp≦5000 is satisfied.

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