TW202003737A - Adhesive tape and production method for semiconductor device - Google Patents

Abstract

To provide an adhesive tape capable of stably holding chips, even when dry polishing is performed during pre-dicing. An adhesive tape including a base material and an adhesive layer provided on one surface thereof. The base material has an absolute value of no more than 30[mu]m for 60 DEG C TMA.

Description

Adhesive tape and manufacturing method of semiconductor device

The present invention relates to an adhesive tape. More specifically, it relates to an adhesive tape that can be used to temporarily fix semiconductor wafers and chips when a semiconductor device is manufactured by a so-called predicing method. The manufacturing method of the semiconductor device with the adhesive tape.

With the progress of miniaturization and multifunctionalization of various electronic devices, semiconductor wafers mounted on electronic devices are also required to be miniaturized and thinned. In order to make the wafer thinner, the back surface of the semiconductor wafer is usually ground to adjust the thickness. In addition, there is also a technique called pre-cutting method, which is to form a groove of a predetermined depth from the surface side of the wafer, then grind from the back side of the wafer, and remove the bottom of the groove by grinding to remove the crystal The wafer is singulated and the wafer is obtained. In the pre-dicing method, since the back surface of the wafer can be ground simultaneously with the singulation of the wafer, a thin wafer can be efficiently manufactured.

Previously, when grinding the back surface of a semiconductor wafer, and when manufacturing a wafer by a pre-cut method, in order to protect the circuit on the surface of the wafer and fix the semiconductor wafer and the semiconductor wafer in advance, an adhesive tape called a back grinding sheet is usually attached Attached to the wafer surface.

As the back grinding sheet used in the pre-cutting method, an adhesive tape provided with a base material and an adhesive layer provided on one side of the base material is used. As an example of such an adhesive tape, Japanese Patent Laid-Open No. 2008-251934 (Patent Document 1) proposes an adhesive tape for semiconductor wafer processing in which a radiation-curable adhesive layer is provided on a base film.

When the wafer is singulated by the above-mentioned pre-cutting method, the back grinding is performed while supplying water to the grinding surface in order to remove the heat and grinding debris generated during the grinding. However, in such previous back surface grinding, grinding marks remain on the back surface of the wafer, and minute defects (fragments) are generated at the end of the wafer, which clearly understands that this is the main reason for damaging the bending strength of the wafer. Especially as a result of the thinning of the wafer, the wafer is easily damaged and the bending strength is reduced as a problem. Prior technical literature Patent Literature

[Patent Document 1] Japanese Patent Laid-Open No. 2008-251934

Problems to be solved by invention

In order to remove the above-mentioned grinding marks, micro-defects of the wafer (hereinafter collectively referred to as "damaged parts"), etc., it has been studied that after the back grinding with water, further dry grinding without using water (dry polishing) to remove damaged parts and improve the bending strength of the wafer. However, since water is not used in dry grinding, the wafer becomes hot. The heat of the wafer is transferred to the adhesive tape. As a result, the temperature of the base material of the adhesive tape during dry grinding may become 60°C or higher.

Since the base material of the adhesive tape is formed of a resin film, it is easily deformed by heat. In the case of back grinding, suction is performed from the base material side of the adhesive tape to fix the adhesive tape, but the end of the adhesive tape is not attractive enough. At this time, when the base material of the adhesive tape is slightly deformed by heat, the fixing of the adhesive tape at the end becomes insufficient, and the end of the adhesive tape may be curled. As a result, the wafer on the adhesive tape peeled off. Wafer peeling not only causes a decrease in yield, but also the wafer after peeling comes into contact with other wafers and destroys the other wafers, causing damage to the grinding device or causing a poor handling in the next step.

Therefore, an object of the present invention is to provide an adhesive tape that can stably hold wafers, wafers, and the like during processing of semiconductor wafers and the like. The object of the present invention is to provide an adhesive tape that can stably hold a wafer even when dry grinding is performed by a so-called pre-cut method. Means to solve the problem

The purpose of the present invention is to solve such a problem, and its gist is as follows. (1) An adhesive tape comprising a base material and an adhesive layer provided on one side of the base material. The absolute value of the 60°C TMA value of the base material is 30 μm or less. (2) The adhesive tape as described in (1), in which the absolute value of the dimensional change rate is 0.8% or less after holding the substrate at 60°C for 3 minutes. (3) (1) or (2) of the adhesive tape, wherein the substrate is from 23 ° C in the tensile modulus of elasticity (E ₂₃₎ and a tensile modulus of elasticity of 60 ° C (E ₆₀ ) The obtained elastic modulus change rate E _(23-60) is 30% or less. (4) The adhesive tape as described in any one of (1) to (3), wherein the back surface of the semiconductor wafer with grooves formed on the surface of the semiconductor wafer is ground and the semiconductor crystal is ground by the grinding In the step of turning the wafer into a semiconductor wafer, it is used to attach to the surface of the semiconductor wafer. (5) The adhesive tape as described in (4), which includes the step of performing dry grinding after singulating the semiconductor wafer into semiconductor wafers. (6) A method of manufacturing a semiconductor device, including the steps of: forming a groove from the surface side of a semiconductor wafer; attaching the adhesive tape as described in any one of (1) to (4) above The step of the surface of the semiconductor wafer; the step of attaching the surface of the semiconductor wafer with the adhesive tape and the groove formed, grinding from the back side and removing the bottom of the groove to singulate into a plurality of wafers ; And the step of peeling the adhesive tape from the aforementioned plurality of wafers. (7) The method for manufacturing a semiconductor device according to (6), which includes the step of performing dry grinding after singulating the semiconductor wafer into a semiconductor wafer. Invention effect

The adhesive tape of the present invention can suppress substrate deformation caused by heat to a very low level and prevent curling during dry grinding. Therefore, even a pre-cutting method including a dry grinding step can manufacture semiconductor wafers with high yield. In addition, the adhesive tape of the present invention can suppress thermal deformation to a very low level, and can also be used for general back grinding processes.

Forms for carrying out the invention

Hereinafter, the adhesive tape of the present invention will be specifically described. First, the main terms used in this specification will be explained. In this specification, for example, the term "(meth)acrylate" is used to indicate both "acrylate" and "methacrylate", and the same applies to other similar terms.

The adhesive tape means a laminate including a base material and an adhesive layer provided on one side of the base material, and does not exclude other constituent layers other than these. For example, for the purpose of improving the adhesion between the surface of the substrate and the adhesive layer and preventing the migration of low molecular weight components, a primer layer can also be formed on the surface of the substrate on the side of the adhesive layer, in order to protect the adhesive layer to Until use, a release sheet may be laminated on the surface of the adhesive layer. In addition, the substrate may be a single layer or multiple layers. The same applies to the adhesive layer. The "surface" of a semiconductor wafer refers to the surface where the circuit is formed, and the "back surface" refers to the surface where the circuit is not formed. The singulation of semiconductor wafers refers to dividing the semiconductor wafers per circuit to obtain semiconductor wafers.

Dry grinding means a step of grinding without using water, slurry of abrasive grains, etc., using a grinding and polishing wheel. As the grinding and polishing wheels, various general-purpose grinding and polishing wheels can be used, and as commercially available products, DISCO grinding wheels "Gettering DP", "DP08 SERIES", etc. can be used, but not limited thereto. Dry grinding removes the damaged parts of the wafer, that is, grinding marks, minute defects (fragments) of the wafer, etc. The pre-cut method refers to a method in which a groove of a predetermined depth is formed from the front side of the wafer, and then ground from the back side of the wafer, and the wafer is singulated by grinding.

Next, the structure of each member of the adhesive tape of the present invention will be described in further detail. [Substrate] (Material properties) As the base material of the adhesive tape, a film or sheet having an absolute value of 60°C TMA value of 30 μm or less can be used. The absolute value of the TMA value at 60°C refers to the use of a 15mm (width) × 10mm (length) measuring film formed of the same material as the film or sheet constituting the base material. By 4000SA manufactured by BRUKER, the load is 2g, Under the condition of a heating rate of 5°C/min, the elongation or shortening (TMA value) of the film for measurement was measured, and it was the absolute value at 60°C. The measurement conditions other than the above are set according to the operation manual of the measurement device. When the film for measurement is stretched, the TMA value is a positive value, and when it is shortened, it is a negative value. In this specification, 10 or more samples are measured, and the obtained TMA values are averaged and evaluated using absolute values.

The absolute value of the 60°C TMA value is one of the indexes of the deformability of the substrate at 60°C, and means that the lower the value, the more deformation can be suppressed. Therefore, a substrate with an absolute value of 60°C TMA value of 30 μm or less has very little thermal deformation at 60°C. The polyvinyl chloride used as the base material of the adhesive tape is about 40 μm, and the ethylene/methacrylic acid copolymer is about 220 μm.

When the absolute value of the TMA value at 60°C is 30 μm or less, even during dry polishing, the adhesive tape is heated to about 60°C to suppress deformation, and it is possible to reduce wafer peeling at the end of the adhesive tape. Without being bound by any theory, the mechanism for this effect is speculated as follows. The diameter of the semiconductor wafer is 6 inches or 8 inches, and the diameter is further increased to 12 inches. Furthermore, a remaining area where no circuit is formed is formed on the outer periphery of the wafer. During back grinding or pre-cutting, the size of the adhesive tape attached to the circuit surface of the wafer is approximately the same as that of the semiconductor wafer. As long as the absolute value of the TMA value at 60°C is within the above range and the area of the adhesive tape is large, as a whole, the influence of the thermal deformation of the substrate is slight, so even if the end of the adhesive tape is slightly curled, this effect It stays in the remaining area without causing peeling or peeling of the product wafer. In addition, the deformation of the adhesive tape in the remaining area is also less, and the peeling of the discarded wafer in the remaining area can also be reduced. On the other hand, when the absolute value of the TMA value at 60°C is greater than 30 μm, the curl of the adhesive tape due to the thermal deformation of the base material also extends to the circuit formation area, so most of the product wafers, wafers in the remaining areas, etc. peel and fall off. Not only does it lead to a decrease in yield, but also the peeled wafer comes into contact with other wafers and damages other wafers, causing damage to the grinding device, and it is a cause of poor handling in the next step.

The absolute value of the 60°C TMA value of the substrate is preferably 5-25 μm. It is more preferably 10 to 20 μm.

The lower the absolute value of the TMA value at 60°C, the better. However, too low a substrate is likely to lack flexibility, and it is preferably within the above range. When the substrate is too hard, the adhesion is poor, and when the back surface is grinded, pressure may be applied to the circuit surface, resulting in small defects (fragmentation) of the wafer, resulting in damage to the circuit and bump electrodes. However, when the film is sufficiently flexible, the absolute value of the TMA value at 60°C may be 5 μm or less or 7 μm or less.

In addition, the absolute value of the dimensional change rate after the base material is kept at 60°C for 3 minutes is preferably 0.8% or less. The measurement of the dimensional change rate is based on JIS C2151 and ASTM D1204, and the measurement temperature is set to 60°C and the holding time is 3 minutes.

The dimensional change rate was measured using a measuring film of 10 cm×10 cm formed of the same material as the film or sheet constituting the base material. The size of the film for measurement is a measured value at 23°C. The measurement sample is placed in a hot-air circulation type constant temperature bath and allowed to stand at a predetermined temperature for a predetermined time. Subsequently, after cooling to room temperature (23°C), the length from one side at 23°C before heating (10cm: L ₀ ) and the length from the same side at 23°C after heating according to the following formula (L ₁ ) To obtain the rate of dimensional change. In this specification, 10 or more samples are measured, and the obtained dimensional change rate is averaged and evaluated using an absolute value. In addition, the measured value is the measured value of MD direction. Dimensional change rate (%)=100×(L ₀ －L ₁ )/L ₀

The absolute value of the dimensional change rate at 60°C for 3 minutes is one of the indexes of the deformability of the base material at 60°C, which means that the lower the value, the more deformation can be suppressed. Therefore, a substrate with an absolute value of a dimensional change rate of 3% at 60°C for 3 minutes or less has very little thermal deformation at 60°C. The polyvinyl chloride used as the base material of adhesive tape is about 0.9%, and the ethylene/methacrylic acid copolymer is about 1%.

When the absolute value of the dimensional change rate at 60°C for 3 minutes is 0.8% or less, even during dry grinding, the adhesive tape is heated to about 60°C to suppress deformation and reduce the occurrence of wafers at the end of the adhesive tape Peel off. Without being bound by any theory, the mechanism of this effect is the same as the TMA value mentioned above. As a whole, the influence of the thermal deformation of the substrate is slight, even if the end of the adhesive tape is slightly curled, this effect remains The remaining area, without causing the peeling and peeling of the product wafer. In addition, the deformation of the adhesive tape in the remaining area is also less, and it is also possible to reduce the chipping of the remaining area. On the other hand, when the absolute value of the dimensional change rate at 60°C for 3 minutes is greater than 0.8%, the curl of the adhesive tape due to the thermal deformation of the base material also extends to the circuit formation area, and the product wafer, the remaining area of the wafer, etc. Peeling and peeling not only lead to a decrease in yield, but also the wafer after peeling comes into contact with other wafers and damages the other wafers, damaging the grinding device, and may cause poor handling in the next step.

The lower the absolute value of the dimensional change rate at 60°C for 3 minutes, the better the effect, and the better is 0 to 0.5%. In addition, in another aspect of the present invention, it may be 0.5 to 0.8%. The absolute value of the dimensional change rate of the substrate at 60°C for 3 minutes is preferably 0 to 0.2%, and most preferably 0%.

In addition, with respect to the tensile elastic modulus at normal temperature, the thermal deformability of the base material can be evaluated according to the rate of change of the tensile elastic modulus at a predetermined temperature. From the tensile modulus of elasticity (E ₂₃ ) at normal temperature (23°C) and the tensile modulus of elasticity (E _n ) at a predetermined temperature (n°C), the temperature changes from 23°C to n°C The change rate of elastic modulus E _(23-n) (%) can be obtained by 100×(E ₂₃ -E _n )/E ₂₃ .

In addition, the tensile modulus of elasticity refers to the use of a 15 mm (width) × 10 mm (length) measuring film formed of the same material as the film or sheet constituting the base material, Rheovibron DDV-II-EP1 manufactured by ORIENTEC, and The value measured at a measurement frequency of 11 Hz. In this specification, 10 or more samples are measured, and the evaluation is performed based on the average value of the obtained tensile elastic modulus.

Substrate of the present invention, at 23 ° C by a tensile elastic modulus of the (E ₂₃₎ and the elastic modulus at 60 ° C the tensile modulus of elasticity (E ₆₀₎ of the obtained change rate E _(23-60) , Preferably below 30%.

The elastic modulus change rate E _(23-60) is one of the indexes of the deformability of the base material at 60°C, which means that the lower the value, the more deformation can be suppressed. Therefore, the base material with an elastic modulus change rate E _(23-60) of 30% or less has very little thermal deformation at 60°C. In the polyvinyl chloride which is commonly used as the base material of adhesive tape, the elastic modulus change rate E _(23-60) is about 95%, and the ethylene/methacrylic acid copolymer is about 70%.

When the change rate of elastic modulus E _(23-60) is 30% or less, even during dry grinding, the adhesive tape is heated to about 60°C to suppress deformation and reduce the peeling of the wafer at the end of the adhesive tape . Without being bound by any theory, the mechanism for this effect is presumed as follows. During dry polishing, the substrate may be deformed due to the heating of the substrate and the shearing force applied to the wafer during polishing. In particular, when the elastic modulus of the base material is reduced due to heating, it is likely to undergo deformation and may cause unpredictable deformation. However, when the elastic modulus change rate E _(23-60) is 30% or less, the characteristics at normal temperature can be substantially maintained, and deformation due to temperature change can also be suppressed. On the other hand, when the elastic modulus change rate E _{(23-60) is} greater than 30%, the heating of the base material greatly changes the characteristics from normal temperature, and may cause unexpected deformation. As a result, the thermal deformation causes curling of the adhesive tape, and the product wafers, wafers in the remaining area, etc., peel off and peel off a lot, which not only results in a reduction in yield, but also the peeled wafers are in contact with other wafers and damage other wafers. It may cause damage and become a cause of poor handling in the next step.

The lower the elastic modulus change rate E _(23-60) , the better the effect, preferably 25% or less, and more preferably 20% or less. In addition, the lower limit value is not particularly limited, and is 3% or more from the viewpoint of material acquisition and the like.

Moreover, the tensile elastic modulus (E ₂₃ ) of the base material at 23° C. is preferably 200 to 2000 MPa, and more preferably 350 to 1500 MPa. The polyvinyl chloride, which is commonly used as the base material of adhesive tape, has a tensile elastic modulus (E ₂₃ ) of about 450 MPa and an ethylene/methacrylic acid copolymer of about 110 MPa.

Furthermore, the tensile elastic modulus (E ₆₀ ) of the base material at 60°C is preferably 150 to 1400 MPa, and more preferably 300 to 1200 MPa. The polyvinyl chloride, which is commonly used as the base material of adhesive tape, has a tensile modulus of elasticity (E ₆₀ ) of about 22 MPa and an ethylene/methacrylic acid copolymer of about 34 MPa.

(Non-limiting specific examples) The base material of the present invention is not particularly limited as long as it satisfies the above physical properties, and may be resin films or resin sheets of various materials. Such a substrate can easily select a sheet with desired characteristics by measuring TMA on various resin sheets, and measuring the dimensional change rate and elastic modulus as necessary. An example of the substrate of the present invention will be described in detail below, but this example is described because the substrate is easily available and should not be interpreted in a limited manner.

The base material of the present invention may be, for example, a laminate of a first base material composed of a harder resin film and a second base material composed of a softer resin film. By using a laminate of resin films with different properties, it is easy to control the characteristics and it is possible to easily obtain a substrate having the desired characteristics. In addition, the substrate of the present invention may be a laminate composed of two layers of the first substrate and the second substrate, and may also be a second substrate in which the same or different layers are laminated on both sides of the first substrate A 3-layer structured laminate.

(1st base material) The first substrate is preferably a rigid film having a Young's modulus of 1000 MPa or more, preferably 1800 to 30,000 MPa, and more preferably 2500 to 6000 MPa. When a rigid film with a high Young's modulus is used as the constituent layer of the substrate, the holding performance of the semiconductor wafer or semiconductor wafer is improved by adhesive tape, and vibration during back grinding is suppressed, so that it is easy to prevent the semiconductor chip from being damaged or damaged. . In addition, when the Young's modulus is in the above range, the stress when peeling the adhesive tape from the semiconductor wafer can be reduced, and it is easy to prevent chipping, damage, and the like that occur when the tape is peeled. Moreover, the workability when attaching the adhesive tape to the semiconductor wafer can be improved.

Here, examples of the rigid film having a Young's modulus of 1000 MPa or more include polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and wholly aromatic polyester. Films of polyester, polyimide, polyamide, polycarbonate, polyacetal, modified polyphenylene ether, polyphenylene sulfide, polyphenylene sulfide, polyether ketone, biaxially stretched polypropylene, etc. . Among these resin films, a film containing one or more kinds selected from a polyester film, a polyamide film, a polyimide film, and a biaxially stretched polypropylene film is preferred, and a polyester film is preferred. Films containing polyethylene terephthalate are more preferred.

The thickness (D1) of the first substrate is preferably 500 μm or less, preferably 15 to 350 μm, and more preferably 20 to 160 μm. By setting the thickness of the first base material to 500 μm or less, it is easy to adjust the peeling force of the adhesive tape to the above-mentioned predetermined value. In addition, by setting it to 15 μm or more, the base material easily functions as a support for the adhesive tape.

In addition, the first base material may contain a plasticizer, a slip agent, an infrared absorber, an ultraviolet absorber, a filler, a colorant, an antistatic agent, an antioxidant, a catalyst, and the like as long as the effect of the present invention is not impaired. In addition, the first base material may be transparent or opaque, and may be colored or vapor-deposited as required. In addition, at least one surface of the first base material may be subjected to a subsequent treatment such as corona treatment to improve the adhesion to at least one of the second base material and the adhesive layer. In addition, the first base material may have an easy adhesion layer of the above-mentioned resin film and film on at least one surface of the resin film.

The composition for forming an easy-adhesive layer for forming an easy-adhesive layer is not particularly limited, and examples thereof include combinations containing polyester resins, urethane resins, polyester urethane resins, and acrylic resins. Thing. The composition for easy adhesion layer formation may contain a crosslinking agent, a photopolymerization initiator, an antioxidant, a softener (plasticizer), a filler, a rust inhibitor, a pigment, a dye, etc. as needed. The thickness of the easy-adhesion layer is preferably 0.01 to 10 μm, preferably 0.03 to 5 μm. In addition, because the thickness of the easy-adhesion layer is smaller than the thickness of the first substrate and the material is relatively soft, the impact on the Young's modulus is small. Even in the case of the easy-adhesion layer, the Young's modulus of the first substrate The Young's modulus of the resin film is substantially the same.

(2nd base material) The second base material is composed of a relatively soft resin film, which can alleviate vibration caused by grinding of the semiconductor wafer, and can prevent cracks and defects in the semiconductor wafer. In addition, when grinding the back surface, the semiconductor wafer to which the adhesive tape is attached is placed on the adsorption machine. By providing the second base material, the adhesive tape can improve the retention of the adsorption machine while giving the back grinding After the peelability from the adsorption machine. The storage elastic modulus of the second substrate at 23°C is preferably 100 to 1500 MPa, and preferably 200 to 1200 MPa. In addition, the stress relaxation rate of the second base material is preferably 70 to 100%, and preferably 78 to 98%.

The second base material has an elastic modulus and a stress relaxation rate within the above range, and the second base material grinds the irregularities of the fine foreign objects sandwiched between the adhesive tape and the adsorption machine, and the back surface grinding The absorption effect of stone vibration and impact becomes higher. The ratio (D2/D1) of the thickness (D2) of the second base material to the thickness (D1) of the first base material is preferably 0.7 or less. When the thickness ratio (D2/D1) is greater than 0.7, since the proportion of the portion of the adhesive tape with high rigidity decreases, it is difficult for the substrate to properly hold the semiconductor wafer, semiconductor wafer, and the like, and it is difficult to reduce the vibration during grinding. Therefore, in the case of singulation into a small and thin semiconductor wafer by the pre-cut method, even if the material of the second base material is appropriately selected, it is difficult to prevent the singulation by back grinding Defective semiconductor wafer. While reducing wafer defects, the second substrate is set to an appropriate thickness to improve the cushioning performance of the adhesive tape, and the thickness ratio (D2/D1) is preferably 0.10 to 0.70.

The maximum value of the dynamic viscoelastic tan δ of the second base material at -5 to 120°C (hereinafter also simply referred to as "the maximum value of tan δ") is preferably 0.7 or more, preferably 0.8 or more, and more preferably 1.0 or more . In addition, the upper limit of the maximum value of tan δ is not particularly limited, but is usually 2.0. When the maximum value of tan δ of the second base material is 0.7 or more, the effect of the second base material absorbing vibrations, impacts, etc. of the grinding stone generated during back grinding is increased. Therefore, even if the semiconductor wafer or the singulated semiconductor wafer is ground to a very thin thickness by the pre-dicing method, it is easy to prevent defects from occurring in the corners of the wafer. In addition, tanδ is called the loss tangent and is defined as "loss elastic modulus/storage elastic modulus", which is a response measured by a dynamic viscoelasticity measuring device to stresses such as tensile stress and torsional stress applied to the object value.

The thickness (D2) of the second base material is preferably 8 to 80 μm, more preferably 10 to 60 μm. By setting the thickness of the second base material to 8 μm or more, the second base material can appropriately absorb vibration during back grinding. In addition, with 80 μm or less, the thickness ratio (D2/D1) can be easily adjusted to the above value. In addition, when the base material is a laminate having a three-layer structure in which the same or different second base materials are laminated on both sides of the first base material, the thickness (D2) of the second base material is preferably 35 μm or less, More preferably, it is 30 μm or less. In a 3-layer laminate, the physical properties of the softer second substrate may be the main one. By setting the thickness of the second substrate to the above range, it is easy to adjust to the required 60°C TMA value and size Rate of change etc.

The second base material may also be formed of a soft film such as low-density polyethylene, and it is preferably a layer formed of a composition for forming a second base material containing an energy ray polymerizable compound. Since the second base material contains the energy ray polymerizable compound, it can be hardened by irradiating the energy ray. In addition, "energy rays" refer to ultraviolet rays, electron beams, etc., preferably ultraviolet rays. Furthermore, more specifically, the second base material forming composition contains a polymerizable compound having an urethane (meth)acrylate (a1) and an alicyclic group or heterocyclic group having 6 to 20 ring forming atoms (a2) is preferred. By containing the two components, the composition for forming the second base material can easily make the elastic modulus of the second base material, the stress relaxation rate of the second base material, and the maximum value of tan δ fall within the above range. From these viewpoints, in addition to the components (a1) and (a2), the second base material forming composition is preferably a polymerizable compound (a3) having a functional group. Moreover, in addition to the above-mentioned (a1) and (a2) or (a1) to (a3) components, the second base material forming composition preferably contains a photopolymerization initiator, and does not impair the effects of the present invention. The range may also contain other additives, resin components, etc. Hereinafter, each component contained in the second base material forming composition will be described in detail.

(Ethyl urethane (meth)acrylate (a1)) As the urethane (meth)acrylate (a1), a compound having at least a (meth)acryloyl group and a urethane bond, and having a property of being polymerized and hardened by energy beam irradiation. Urethane (meth)acrylate (a1) is an oligomer or polymer.

The mass average molecular weight (Mw) of the component (a1) is preferably 1,000 to 100,000, preferably 2,000 to 60,000, and more preferably 3,000 to 20,000. In addition, the mass average molecular weight (Mw) is a value in terms of polystyrene measured using a gel permeation chromatography (GPC) method, and specifically, it can be measured under the following conditions. (Measurement conditions) ‧Tube: "TSK guard column HXL-H", "TSK gel GMHXL (×2)", "TSK gel G2000HXL" (both are made by TOSOH Corporation) ‧Column temperature: 40°C ‧Expansion solvent: Tetrahydrofuran ‧Flow rate: 1.0mL/min In addition, the number of (meth)acryloyl groups (hereinafter also referred to as "number of functional groups") in the component (a1) may be monofunctional, bifunctional, or trifunctional or more, preferably monofunctional or bifunctional. The component (a1) can be obtained by reacting a (meth)acrylate having a hydroxyl group on a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound and a polyisocyanate compound, for example. Moreover, component (a1) may be used individually or in combination of 2 or more types.

The polyol compound that becomes the raw material of the component (a1) is not particularly limited as long as it has two or more hydroxyl groups. Examples of specific polyol compounds include alkanediol, polyether polyol, polyester polyol, and polycarbonate polyol. Among these, polyester polyols are preferred. The polyol compound may be any of a difunctional diol, a trifunctional triol, and a polyhydric alcohol with at least four functions. A difunctional diol is preferable, and a polyester type diol is preferable. Alcohol is preferred.

Examples of the polyisocyanate compound include aliphatic polyisocyanates such as tetramethylene diisocyanate, hexamethylene diisocyanate, and trimethylhexamethylene diisocyanate; isophorone diisocyanate, norbranched Alicyclic diisocyanates such as alkane diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, ω,ω'-diisocyanate dimethylcyclohexane Isocyanates; 4,4'-diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, tolidine diisocyanate, tetramethylene xylylene diisocyanate, naphthalene-1,5-di Aromatic diisocyanates such as isocyanates. Among these, isophorone diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate are preferred.

A (meth)acrylate having a hydroxyl group can be reacted with a terminal isocyanate urethane prepolymer obtained by reacting the above polyol compound with a polyisocyanate compound to obtain a urethane (meth)acrylate (a1). The (meth)acrylate having a hydroxyl group is not particularly limited as long as it has a compound having a hydroxyl group and a (meth)acryloyl group in at least one molecule.

Specific examples of the (meth)acrylate having a hydroxyl group include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (Meth)acrylic acid 4-hydroxyhexyl ester, (meth)acrylic acid 5-hydroxyoctyl ester, (meth)acrylic acid 2-hydroxy-3-phenoxypropyl ester, neopentaerythritol tri(meth)acrylate , Hydroxyalkyl (meth)acrylates such as polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate; hydroxyl-containing (N-hydroxymethyl (meth)acrylamide, etc.) Meth) acrylamide; reactant obtained by reacting (meth)acrylic acid with vinyl alcohol, vinyl phenol, and diglycidyl ester of bisphenol A. Among these, hydroxyalkyl (meth)acrylate is preferred, and 2-hydroxyethyl (meth)acrylate is preferred.

As a condition for reacting the terminal isocyanate urethane prepolymer with a (meth)acrylate having a hydroxyl group, in the presence of a solvent catalyst added as required, the reaction is performed at 60 to 100°C for 1 to 4 The condition of hours is better. The content of the component (a1) in the second base material forming composition is preferably 10 to 70 mass %, preferably 20 to 60 relative to the total amount (100 mass %) of the second base material forming composition The mass% is more preferably 25 to 55% by mass, and still more preferably 30 to 50% by mass.

(Polymer compound (a2) having an alicyclic group or a heterocyclic group having 6 to 20 ring-forming atoms) The component (a2) is a polymerizable compound having an alicyclic group or a heterocyclic group having 6 to 20 ring forming atoms, preferably a compound having at least one (meth)acryloyl group. By using this component (a2), the film-forming property of the obtained composition for forming a second base material can be improved.

The number of ring-forming atoms of the alicyclic group or heterocyclic group included in the component (a2) is preferably 6-20, preferably 6-18, more preferably 6-16, and particularly preferably 7-12. Examples of the atoms forming the ring structure of the heterocyclic group include carbon atoms, nitrogen atoms, oxygen atoms, and sulfur atoms. In addition, the number of ring-forming atoms means the number of atoms constituting the ring itself in a compound of a structure in which the atoms are cyclically bonded, and the number of ring-forming atoms does not include atoms not constituting the ring (for example, hydrogen bonded to atoms constituting the ring Atom), the ring is an atom contained in the substituent when substituted with a substituent.

Specific components (a2) include, for example, isobornyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentyl (meth)acrylate, and dicyclopentyl (meth)acrylate. Aliphatic group-containing (meth)acrylates such as oxyalkylene, cyclohexyl (meth)acrylate, adamantyl (meth)acrylate; tetrahydrofurfuryl (meth)acrylate, (meth)acrylic acid Heterocyclic group-containing (meth)acrylates such as morpholine ester. The component (a2) may be used alone or in combination of two or more. Among these, (meth)acrylate containing an alicyclic group is preferable, and isobornyl (meth)acrylate is preferable.

The content of the component (a2) in the second base material forming composition is preferably 10 to 70 mass %, and preferably 20 to 60 relative to the total amount (100 mass %) of the second base material forming composition. The mass% is more preferably 25 to 55% by mass, and particularly preferably 30 to 50% by mass.

(Polymerizable compound with functional group (a3)) The component (a3) is a polymerizable compound containing functional groups such as a hydroxyl group, an epoxy group, an amide group, and an amine group, and is preferably a compound having at least one (meth)acryl amide group. The compatibility between the component (a3) and the component (a1) is good, and it is easy to adjust the viscosity of the composition for forming the second substrate to an appropriate range. In addition, when the component (a3) is contained, the elastic modulus, the value of tan δ, etc. of the second base material formed from the composition are easily within the above range, and even if the second base material is thin, the cushioning performance is good. Examples of the component (a3) include hydroxyl-containing (meth)acrylates, epoxy-containing compounds, amide group-containing compounds, and amine group-containing (meth)acrylates.

Examples of hydroxyl-containing (meth)acrylates include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, and (meth) Group) 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, phenylhydroxypropyl (meth)acrylate, and the like. Examples of epoxy group-containing compounds include glycidyl (meth)acrylate, methylglycidyl (meth)acrylate, allyl glycidyl ether, etc. Among these, Epoxy group-containing (meth)acrylates such as glycidyl (meth)acrylate and methoxypropyl (meth)acrylate are preferred. Examples of the amide group-containing compound include (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, and N-hydroxyl Methyl (meth) acrylamide, N-methylolpropane (meth) acrylamide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (methyl) Acrylic amide and so on. Examples of the amine group-containing (meth)acrylate include, for example, a first-stage amine group-containing (meth)acrylate, a second-stage amine group-containing (meth)acrylate, and a third-stage amine group. (Meth)acrylate and so on.

Among these, a hydroxyl group-containing (meth)acrylate is preferred, and a hydroxyl group-containing (meth)acrylate having an aromatic ring such as phenylhydroxypropyl (meth)acrylate is preferred. Moreover, component (a3) may be used individually or in combination of 2 or more types.

In order to easily adjust the elastic modulus and the stress relaxation rate of the second substrate to the above-mentioned range, and to improve the film-forming property of the composition for forming the second substrate, the component (a3) in the composition for forming the second substrate The content is preferably 5 to 40% by mass, preferably 7 to 35% by mass, more preferably 10 to 30% by mass, more preferably 10% to 30% by mass relative to the total amount (100% by mass) of the second substrate forming composition. 13-25% by mass. Moreover, the content ratio [(a2)/(a3)] of the component (a2) and the component (a3) in the second base material forming composition is preferably 0.5 to 3.0, preferably 1.0 to 3.0, and more preferably 1.3 to 3.0, particularly preferably 1.5 to 2.8.

(Polymerizable compound other than components (a1) to (a3)) The second base material-forming composition may contain other polymerizable compounds other than the aforementioned components (a1) to (a3) as long as the effects of the present invention are not impaired. Examples of other polymerizable compounds include alkyl (meth)acrylates having a C 1-20 alkyl group; styrene, hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, and N-vinylformamide , N-vinylpyrrolidone, vinyl compounds such as N-vinylcaprolactam, etc. In addition, these other polymerizable compounds may be used alone or in combination of two or more.

The content of the other polymerizable compound in the second base material forming composition is preferably 0 to 20% by mass, preferably 0 to 10% by mass, more preferably 0 to 5% by mass, and particularly preferably 0 to 2% by mass %.

(thioxanthone)化合物、過氧化化合物、以及胺、苯醌等的光敏化劑等，更具體地，例如可舉出1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、苯偶姻、苯偶姻甲醚、苯偶姻乙醚、苯偶姻異丙醚、苄基苯基硫醚、四甲基秋蘭姆一硫醚、偶氮雙異丁腈、聯苄(dibenzyl)、聯乙醯、8-氯蒽醌、雙(2,4,6-三甲基苯甲醯基)苯基氧化膦等。 該等光聚合起始劑能夠單獨或組合2種以上而使用。 第2基材形成用組合物中的光聚合起始劑含量，相對於能量線聚合性化合物的總量100質量份，良好為0.05～15質量份，較佳為0.1～10質量份，更佳為0.3～5質量份。(Photopolymerization initiator) When forming the second substrate, the polymerization time is shortened by light irradiation, and from the viewpoint of reducing the amount of light irradiation, the composition for forming a second substrate further contains a photopolymerization initiator as good. Examples of the photopolymerization initiator include benzoin compounds, acetophenone compounds, acetylphosphine oxide compounds, titanocene compounds, and 9-oxosulfur.

(thioxanthone) compounds, peroxide compounds, photosensitizers such as amines, benzoquinones, etc., more specifically, for example, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-benzene -Propane-1-one, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl phenyl sulfide, tetramethyl thiuram monosulfide, azobis Isobutyronitrile, dibenzyl, diacetyl, 8-chloroanthraquinone, bis(2,4,6-trimethylbenzyl) phenylphosphine oxide, etc. These photopolymerization initiators can be used alone or in combination of two or more. The content of the photopolymerization initiator in the second base material forming composition is preferably 0.05 to 15 parts by mass, preferably 0.1 to 10 parts by mass, more preferably 100 parts by mass of the total energy ray polymerizable compound. It is 0.3 to 5 parts by mass.

(Other additives) The second base material-forming composition may contain other additives as long as the effect of the present invention is not impaired. Examples of other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, and dyes. When these additives are blended, the content of each additive in the second base material-forming composition is preferably 0.01 to 6 parts by mass, preferably 0.1 to 3 parts by mass relative to 100 parts by mass of the total energy ray polymerizable compound.

(Resin component) The second base material-forming composition may contain a resin component as long as the effect of the present invention is not impaired. Examples of the resin component include polyene resins such as polyene·thiol resins, polybutenes, polybutadienes, and polymethylpentene, and thermoplastic resins such as styrene copolymers. The content of these resin components in the second base material forming composition is preferably 0-20% by mass, preferably 0-10% by mass, more preferably 0-5% by mass, and particularly preferably 0-2% by mass . (Modulation of base material) A non-limiting example of the base material of the adhesive tape of the present invention is a laminate of the first base material and the second base material. The manufacturing method is not particularly limited, and can be manufactured using a conventional method. For example, a laminated base material can be obtained by applying a second base material forming composition to a release sheet and hardening the second base material, directly bonding to the first base material, and removing the release sheet. As a method of forming the second base material on the release sheet, a coating film can be formed by directly applying the composition for forming the second base material on the release sheet using a known coating method, and the coating film can be irradiated Energy rays to form the second substrate. Alternatively, the second base material may be formed by directly coating the second base material forming composition on one surface of the first base material, heating and drying, or irradiating the coating film with energy rays.

Examples of the coating method of the second base material forming composition include spin coating, spray coating, bar coating, blade coating, roll coating, blade coating, and die coating. Cloth method, gravure coating method, etc. In addition, in order to improve the applicability, the second base material-forming composition may be formulated with an organic solvent and applied to the release sheet in the form of a solution.

When the composition for forming the second substrate contains an energy ray polymerizable compound, it is preferable to irradiate the coating film of the composition for forming the second substrate with energy rays and harden it to form the second substrate. The hardening of the second base material may be performed once, or may be divided into plural times. For example, after the coating film on the release sheet is completely cured to form the second substrate, it is bonded to the first substrate, or the second substrate can be formed without semi-curing the coating film to be completely cured. Film, and after bonding the second base material-forming film to the first base material, energy beam is irradiated again to completely harden to form a second base material. As the energy rays irradiated in this hardening treatment, ultraviolet rays are preferred. In addition, at the time of curing, the coating film of the composition for forming the second substrate may be exposed, but the coating film may be covered with a release sheet, the first substrate, etc., and the coating film may not be exposed. It is better to irradiate the energy beam underneath for curing.

Moreover, the base material can also be obtained by bonding the second base material to one side or both sides of the first base material. In addition to the first base material and the second base material, the base material of the present invention may have other constituent layers as long as the predetermined TMA value of 60°C is satisfied.

The total thickness of the base material is the total thickness of the first base material, the second base material, and other constituent layers that can be used as needed, preferably 23 to 150 μm, more preferably 30 to 140 μm. The above-mentioned laminated base material, which is an example of the base material of the present invention, is a laminate of the first base material and the second base material, and its physical properties can be controlled by the materials and thickness of the first base material and the second base material. Therefore, in order to obtain a substrate with desired characteristics, it is important to follow the following guidelines to balance the characteristics of the first substrate and the second substrate.

The 60°C TMA value, dimensional change rate, and elastic modulus change rate of the substrate can be controlled by appropriately selecting the film constituting the substrate. For example, as a constituent thin film, a thin film having a high Tg, or an annealing treatment during film formation of the substrate can be used to reduce these values. In addition, in the case where the base material is a laminated base material of the first base material and the second base material, the first base material or the second base can also be constituted by using a thin film having a high Tg or an annealed film, etc. Materials or both, the TMA value at 60°C, the rate of dimensional change, and the rate of change in elastic modulus can be controlled in a relatively low range. In addition, when laminating the base material, by increasing the relative thickness of the high-Tg thin film or the annealed film, the 60°C TMA value, dimensional change rate, and elastic modulus change rate can be kept low Scope. In addition, when other constituent layers are used, when a film with high rigidity is used, the 60°C TMA value, dimensional change rate, and elastic modulus change rate can be controlled to a relatively low range.

[Adhesive layer] The adhesive is not particularly limited as long as it has proper pressure-sensitive adhesiveness at normal temperature, and the storage elastic modulus at 23°C is preferably 0.05 to 0.50 MPa. Circuits and the like are formed on the surface of the semiconductor wafer and usually have irregularities. When the adhesive tape has a storage elastic modulus within the above range, when it is attached to the surface of the wafer with unevenness, the unevenness of the wafer surface can fully contact the adhesive layer, and the adhesiveness of the adhesive layer can be properly Play. Therefore, the adhesive tape can be reliably fixed to the semiconductor wafer and appropriately protect the wafer surface during back grinding. From these viewpoints, the storage elastic modulus of the adhesive is preferably 0.10 to 0.35 MPa. In addition, the storage elastic modulus of the adhesive means the storage elastic modulus of the hardened surface obtained by irradiating energy rays when the adhesive layer is formed of an energy ray-curable adhesive.

The thickness (D3) of the adhesive layer is preferably less than 200 μm, preferably 5 to 55 μm, and more preferably 10 to 50 μm. When the adhesive layer is thinned in this way, since the ratio of the low-rigidity portion of the adhesive tape can be reduced, it is easy to further prevent the semiconductor wafer from being damaged during back grinding.

The adhesive layer is formed of, for example, an acrylic adhesive, an urethane adhesive, a rubber adhesive, a silicone adhesive, or the like, and an acrylic adhesive is preferred. In addition, the adhesive layer is preferably formed of an energy ray-curable adhesive. By forming an adhesive layer with an energy ray-curable adhesive, before curing by energy ray irradiation, the elastic modulus at 23°C is set in the above range, and the peel force can be easily set after curing Below 1000mN/50mm.

Hereinafter, specific examples of the adhesive are described in detail, but these are non-limiting examples, and the adhesive layer of the present invention should not be construed as being limited thereto. As the energy ray-curable adhesive, for example, in addition to the non-energy ray-curable adhesive resin (also called "adhesive resin I"), energy ray-curable compounds containing energy ray-curable compounds other than the adhesive resin can also be used Adhesive composition (hereinafter also referred to as "X-type adhesive composition"). In addition, as the energy ray-curable adhesive, an energy ray-curable adhesive resin (hereinafter, also referred to as "adhesive resin II") containing an unsaturated group introduced into the side chain of the non-energy ray-curable adhesive resin may be used. ") As a main component, an adhesive composition that does not contain an energy ray-curable compound other than an adhesive resin (hereinafter also referred to as "Y-type adhesive composition").

Furthermore, as an energy ray-curable adhesive, a combination of X-type and Y-type can be used, that is, an energy ray containing an energy ray-curable compound other than the adhesive resin in addition to the energy ray-curable adhesive resin II Hardenable adhesive composition (hereinafter also referred to as "XY type adhesive composition"). Among these, it is preferable to use an XY type adhesive composition. By using an XY type object, it has sufficient adhesive properties before curing, and on the other hand, it can sufficiently reduce the peeling force to the semiconductor wafer after curing.

However, as an adhesive, it can also be formed by a non-energy ray-curable adhesive composition that is not cured by irradiation energy. The non-energy ray-curable adhesive composition contains at least non-energy ray-curable adhesive resin I, and on the other hand, does not contain the aforementioned energy ray-curable adhesive resin II and the energy ray-curable compound.

In the following description, "adhesive resin" is used as a term referring to one or both of the above-mentioned adhesive resin I and adhesive resin II. Specific adhesive resins include, for example, acrylic resins, urethane resins, rubber resins, silicone resins, etc. Acrylic resins are preferred. Hereinafter, as the adhesive resin, an acrylic adhesive using an acrylic resin will be described in more detail.

As the acrylic resin, an acrylic polymer (b) can be used. The acrylic polymer (b) is obtained by polymerizing a monomer containing at least alkyl (meth)acrylate and contains a structural unit derived from alkyl (meth)acrylate. Examples of alkyl (meth)acrylates include those having an alkyl group having 1 to 20 carbon atoms. The alkyl group may be linear or branched. Specific examples of the alkyl (meth)acrylate include methyl (meth)acrylate, ethyl (meth)acrylate, isopropyl (meth)acrylate, n-propyl (meth)acrylate, ( N-butyl meth)acrylate, 2-ethylhexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, (meth) Decyl acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, etc. Alkyl (meth)acrylate can be used individually or in combination of 2 or more types.

From the viewpoint of enhancing the adhesive force of the adhesive layer, the acrylic polymer (b) preferably contains a structural unit containing an alkyl (meth)acrylate having a carbon number of 4 or more derived from an alkyl group. The carbon number of the alkyl (meth)acrylate is preferably 4-12, and more preferably 4-6. In addition, alkyl (meth)acrylate having an alkyl group having 4 or more carbon atoms is preferably alkyl acrylate.

In the acrylic polymer (b), the alkyl (meth)acrylate having an alkyl group having a carbon number of 4 or more, relative to the total amount of monomers constituting the acrylic polymer (b) (hereinafter also referred to as "monomer" "Total amount"), good is 40 to 98 mass%, preferably 45 to 95 mass%, more preferably 50 to 90 mass%.

The acrylic polymer (b), in addition to the structural unit derived from an alkyl (meth)acrylate having 4 or more carbon atoms derived from an alkyl group, in order to adjust the elastic modulus and adhesive characteristics of the adhesive layer, to contain The copolymer of the structural unit of alkyl (meth)acrylate having 1 to 3 carbon atoms in the alkyl group is preferred. The alkyl (meth)acrylate is preferably an alkyl (meth)acrylate having 1 or 2 carbon atoms, preferably methyl (meth)acrylate, and most preferably methyl methacrylate. In the acrylic polymer (b), the alkyl (meth)acrylate having 1 to 3 carbon atoms in the alkyl group is preferably 1 to 30% by mass relative to the total amount of monomers, preferably 3 to 26% by mass %, more preferably 6 to 22% by mass.

In addition to the structural unit derived from the alkyl (meth)acrylate, the acrylic polymer (b) is preferably a structural unit derived from a functional group-containing monomer. Examples of the functional group of the functional group-containing monomer include a hydroxyl group, a carboxyl group, an amine group, and an epoxy group. The functional group-containing monomer can react with a crosslinking agent described later to become a crosslinking starting point, or can react with an unsaturated group-containing compound to introduce an unsaturated group into the side chain of the acrylic polymer (b).

Examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amine group-containing monomer, an epoxy group-containing monomer, and the like. These monomers can be used alone or in combination of two or more. Among these, a hydroxyl group-containing monomer and a carboxyl group-containing monomer are preferable, and a hydroxyl group-containing monomer is more preferable.

Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, and (meth)acrylic acid 2. -Hydroxyalkyl (meth)acrylates such as hydroxybutyl ester, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate; unsaturated alcohols such as vinyl alcohol and allyl alcohols Class etc.

Examples of carboxyl group-containing monomers include ethylenically unsaturated monocarboxylic acids such as (meth)acrylic acid and crotonic acid; fumaric acid, itaconic acid, maleic acid, and citraconic acid. Ethylene unsaturated dicarboxylic acid and its anhydride, 2-carboxyethyl methacrylate, etc.

The functional group monomer is preferably 1 to 35% by mass, preferably 3 to 32% by mass, and more preferably 6 to 30% by mass relative to the total amount of monomers constituting the acrylic polymer (b). In addition to the above, the acrylic polymer (b) may contain styrene, α-methylstyrene, vinyl toluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide, etc. Structural units of monomers copolymerized with acrylic monomers.

The acrylic polymer (b) can be used as a non-energy ray-curable adhesive resin I (acrylic resin). In addition, examples of the energy ray-curable acrylic resin include a compound having a photopolymerizable unsaturated group (also referred to as an unsaturated group-containing compound) reacting with the functional group of the acrylic polymer (b). A thing of success.

The unsaturated group-containing compound has both a substituent capable of bonding to the functional group of the acrylic polymer (b) and a compound having both a photopolymerizable unsaturated group. Examples of the photopolymerizable unsaturated group include (meth)acryloyl, vinyl, and allyl groups, and (meth)acryloyl is preferred. In addition, examples of the substituent that the unsaturated group-containing compound has that can be bonded to the functional group include isocyanate groups and epoxypropyl groups. Therefore, examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

Furthermore, the unsaturated group-containing compound is preferably reacted with a part of the functional group of the acrylic polymer (b), specifically, the unsaturated group-containing compound has The reaction of 50 to 98 mole% of the functional group is preferred, and the reaction of 55 to 93 mole% is preferred. In this way, in the energy ray-curable acrylic resin, a part of the functional group does not react with the unsaturated group-containing compound and remains, and is easily crosslinked by the crosslinking agent. The weight average molecular weight (Mw) of the acrylic resin is preferably 300,000 to 1.6 million, preferably 400,000 to 1.4 million, and more preferably 500,000 to 1.2 million.

(Energy ray hardening compound) The energy ray-curable compound contained in the X-type or XY-type adhesive composition is preferably a monomer or oligomer having an unsaturated group in the molecule and capable of being polymerized and hardened by energy ray irradiation. Examples of such energy ray-curable compounds include trimethylolpropane tri(meth)acrylate, neopentaerythritol (meth)acrylate, neopentaerythritol tetra(meth)acrylate, and dimethacrylate. Poly(meth)acrylate monomers such as neopentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate, etc. Oligomers such as polyester, urethane (meth)acrylate, polyester (meth)acrylate, polyether (meth)acrylate, epoxy (meth)acrylate, etc.

Among these, the urethane (meth)acrylate oligomer is preferred from the viewpoint that the molecular weight is high and it is not easy to reduce the elastic modulus of the adhesive layer. The molecular weight of the energy ray-curable compound (weight average molecular weight in the case of an oligomer) is preferably 100 to 12,000, preferably 200 to 10,000, more preferably 400 to 8000, and particularly preferably 600 to 6000.

The content of the energy ray-curable compound in the X-type adhesive composition is preferably 40 to 200 parts by mass, preferably 50 to 150 parts by mass, and more preferably 60 to 90 parts by mass relative to 100 parts by mass of the adhesive resin. Copies. On the other hand, the content of the energy ray-curable compound in the XY-type adhesive composition is preferably 1 to 30 parts by mass, preferably 2 to 20 parts by mass, and more preferably 100 parts by mass of the adhesive resin. It is 3 to 15 parts by mass. In the XY type adhesive composition, since the adhesive resin is energy ray curable, even if the content of the energy ray curable compound is small, the peeling force can be sufficiently reduced after the energy ray irradiation.

(Crosslinking agent) The adhesive composition preferably further contains a crosslinking agent. The cross-linking agent is, for example, a functional group derived from a functional group monomer included in the adhesive resin, and cross-links the adhesive resin. Examples of the crosslinking agent include isocyanate-based crosslinking agents such as toluene diisocyanate, hexamethylene diisocyanate, and these adducts; ethylene glycol glycidyl ether, 1,3-bis (N,N'-diepoxypropylaminemethyl) cyclohexane and other epoxy-based crosslinking agents; hexa[1-(2-methyl)-azcyclopropanyl]triphosphatriazine and the like Acridine-based cross-linking agent; clamp compound-based cross-linking agent such as aluminum clamp compound. These crosslinking agents may be used alone or in combination of two or more.

Among these, the isocyanate-based crosslinking agent is preferred from the viewpoints of improving cohesion and adhesion, and the viewpoint of ease of acquisition. From the viewpoint of promoting the crosslinking reaction, the amount of the crosslinking agent is preferably 0.01 to 10 parts by mass relative to 100 parts by mass of the adhesive resin, preferably 0.03 to 7 parts by mass, and more preferably 0.05 to 4 parts by mass .

(Photopolymerization initiator) In addition, when the adhesive composition is energy ray hardening, it is preferred that the adhesive composition further contains a photopolymerization initiator. By containing the photopolymerization initiator, even the lower energy energy rays such as ultraviolet rays can sufficiently progress the hardening reaction of the adhesive composition.

化合物、過氧化物化合物、以及胺、苯醌等的光敏化劑等，更具體地，例如可舉出1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、苯偶姻、苯偶姻甲醚、苯偶姻乙醚、苯偶姻異丙醚、苄基苯基硫醚、四甲基秋蘭姆一硫醚、偶氮雙異丁腈、聯苄、聯乙醯、8-氯蒽醌、雙(2,4,6-三甲基苯甲醯基)苯基氧化膦等。Examples of the photopolymerization initiator include benzoin compounds, acetophenone compounds, acetylphosphine oxide compounds, titanocene compounds, and 9-oxosulfur.

Compounds, peroxide compounds, photosensitizers such as amines, benzoquinones, etc., more specifically, for example, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl- Propane-1-one, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl phenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyl Nitrile, bibenzyl, diacetyl, 8-chloroanthraquinone, bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, etc.

These photopolymerization initiators may be used alone or in combination of two or more. The formulation amount of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, preferably 0.03 to 5 parts by mass, and more preferably 0.05 to 5 parts by mass relative to 100 parts by mass of the adhesive resin.

(Other additives) The adhesive composition may contain other additives as long as the effect of the present invention is not impaired. Examples of other additives include antistatic agents, antioxidants, adhesion-imparting agents, softeners (plasticizers), fillers, rust inhibitors, pigments, and dyes. When these additives are blended, the blending amount of the additives is preferably 0.01 to 6 mass parts relative to 100 mass parts of the adhesive resin.

In addition, from the viewpoint of improving the applicability to a substrate, a release sheet, and the like, the adhesive composition may further be a solution form of the adhesive composition diluted with an organic solvent. Examples of the organic solvent include methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, and isopropanol. In addition, these organic solvents can also directly use the organic solvent used in the synthesis of the adhesive resin, and can also be added in addition to the organic solvent used in the synthesis in such a manner that the solution of the adhesive composition can be uniformly applied One or more organic solvents.

[Peel sheet] The peeling sheet can also be attached to the surface of the adhesive tape. Specifically, the release sheet is attached to the surface of the adhesive layer of the adhesive tape. By attaching the release sheet to the surface of the adhesive layer, the adhesive layer is protected during transportation and storage. The peeling sheet is peelably attached to the adhesive tape, and is removed from the adhesive tape before using the adhesive tape (that is, before grinding the back surface of the wafer). As the release sheet, a release sheet having at least one surface subjected to release treatment can be used, and specific examples thereof include those obtained by applying a release agent to the surface of the substrate for release sheets.

As the base material for the release sheet, a resin film is preferred. Examples of the resin constituting the resin film include polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate. Polyester resins such as polyester resin films such as diester resins, polypropylene resins, and polyethylene resins. Examples of the release agent include rubber-based elastomers such as polysiloxane-based resins, olefin-based resins, isoprene-based resins, and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine Department of resin. The thickness of the release sheet is not particularly limited, but it is preferably 10 to 200 μm, preferably 20 to 150 μm.

(Manufacturing method of adhesive tape) The method for manufacturing the adhesive tape of the present invention is not particularly limited, and can be manufactured using a conventional method. For example, the adhesive layer provided on the release sheet can be attached to one side of the substrate to produce an adhesive tape with a release sheet attached to the surface of the adhesive layer. The peeling sheet attached to the surface of the adhesive layer may be properly peeled off and removed before using the adhesive tape. As a method of forming the adhesive layer on the release sheet, a conventional coating method can be used to directly apply the adhesive composition on the release sheet, and the adhesive layer can be formed by heating and drying to volatilize the solvent from the coating film.

Alternatively, an adhesive (adhesive composition) may be directly coated on one side of the substrate to form an adhesive layer. Examples of the coating method of the adhesive include the spin coating method, spray coating method, bar coating method, blade coating method, roll coating method, and blade coating method listed in the second substrate manufacturing method. Method, die coating method, gravure coating method, etc.

The adhesive layer may be provided on the surface of the first base material constituting the base material or on the surface of the second base material. When the base material is a laminate composed of two layers, it is preferably provided on the surface of the first base material. When the adhesive layer is provided on the surface of the first base material, the second base material side is arranged on the adsorption machine used for back grinding. Because the second base material is relatively soft, it can be easily adhered to the suction machine and prevent the adhesive tape from curling.

[Manufacturing method of semiconductor device] The adhesive tape of the present invention is particularly suitable for attaching to the surface of a semiconductor wafer in the pre-dicing method and grinding the back surface of the wafer. As a non-limiting example of use of the adhesive tape, a method of manufacturing a semiconductor device will be described more specifically below.

Specifically, the method of manufacturing a semiconductor device includes at least the following steps 1 to 4. Step 1: the step of forming a trench from the surface side of the semiconductor wafer; Step 2: The step of attaching the above adhesive tape to the surface of the semiconductor wafer; Step 3: A step of singulating a semiconductor wafer with an adhesive tape attached to the surface and forming the above-mentioned groove, grinding it from the back side and removing the bottom of the groove into a plurality of wafers; and Step 4: The step of peeling the adhesive tape from the singulated semiconductor wafer (that is, a plurality of semiconductor wafers).

Hereinafter, each step of the method of manufacturing the semiconductor device will be described in detail. (step 1) In step 1, a trench is formed from the surface side of the semiconductor wafer. The trench formed in this step is a trench with a shallower depth than the thickness of the semiconductor wafer. The groove can be formed by dicing using a conventionally known wafer dicing device or the like. In addition, in step 3 described later, by removing the bottom of the trench, the semiconductor wafer is divided into a plurality of semiconductor wafers along the trench. (Step 2) In step 2, the adhesive tape of the present invention is attached to the surface of the semiconductor wafer with the groove formed through the adhesive layer.

The semiconductor wafer used in this manufacturing method may be a silicon wafer, and may also be a wafer such as gallium and arsenic, a glass wafer, or a sapphire wafer. The thickness of the semiconductor wafer before grinding is not particularly limited, but is generally about 500 to 1000 μm. In addition, a semiconductor wafer usually has a circuit formed on its surface. The formation of a circuit on the surface of the wafer can be performed using a variety of methods including etching methods, peeling methods, doctor blade methods, and the like that have been widely used in the past.

The semiconductor wafer to which the adhesive tape is attached and the groove is formed is placed on the suction machine table and is held by the suction machine table. At this time, the surface side of the semiconductor wafer system is arranged on the machine side and is attracted.

(Step 3) After step 1 and step 2, the back surface of the semiconductor wafer on the adsorption machine is ground, and the semiconductor wafer is singulated into a plurality of semiconductor wafers. Here, when a groove is formed on the semiconductor wafer, back grinding is performed to thin the semiconductor wafer to at least the bottom of the groove. By back grinding, the groove becomes a cut through the wafer, and the semiconductor wafer is divided and singulated into individual semiconductor chips by the cut.

The shape of the singulated semiconductor wafer may be square or elongated such as rectangular. In addition, the thickness of the singulated semiconductor wafer is not particularly limited, but it is preferably about 5 to 100 μm, preferably 10 to 45 μm. In addition, the size of the singulated semiconductor wafer is not particularly limited, and the wafer size is preferably less than 50 mm ² , preferably less than 30 mm ² , and more preferably less than 10 mm ² .

When the adhesive tape of the present invention is used, even such a thin and/or small semiconductor wafer can prevent defects in the semiconductor wafer during back grinding (step 3) and when the adhesive tape is peeled off (step 4). After the back grinding is completed, dry grinding is preferably performed before the wafer is picked up.

This is because in the back grinding, grinding marks remain on the back of the wafer, and minute defects (fragments) are generated at the end of the wafer, which becomes the main reason for damaging the bending strength of the wafer. As a result of thinning and miniaturization of the chip, the chip is easily damaged and the bending strength is reduced as a problem. In order to remove the above-mentioned grinding marks, micro-defects (damaged parts) of the wafer, etc., it is preferable to further remove the damaged parts by dry grinding without using water and improve the bending strength of the wafer after the back grinding. Since water is not used in dry grinding, the wafer becomes hot. The heat of the wafer is transferred to the adhesive tape. As a result, during dry polishing, the temperature of the base material becomes 60°C or higher, and the end of the adhesive tape may curl and the wafer may peel off. However, by using the adhesive tape of the present invention, the deformation of the adhesive tape can be suppressed, and the peeling of the wafer can be reduced. Therefore, the adhesive tape of the present invention is particularly suitable for holding semiconductor wafers, wafers and the like in a pre-dicing method including a dry grinding step.

(Step 4) Next, the adhesive tape for semiconductor processing is peeled from the singulated semiconductor wafer (that is, a plurality of semiconductor wafers). This step is performed using the following method, for example. First, when the adhesive layer of the adhesive tape is formed of an energy ray hardening adhesive, the energy layer is irradiated to harden the adhesive layer. Next, the pick-up tape is attached to the back side of the singulated semiconductor wafer, and the position and direction are aligned so that it can be picked up. At this time, the ring-shaped frame disposed on the outer peripheral side of the wafer is also attached to the pickup tape, and the outer peripheral edge portion of the pickup tape is fixed to the ring-shaped frame. The pickup tape can be attached to the wafer and the ring frame at the same time, or it can be attached at different timings. Next, the adhesive tape is peeled off from the plurality of semiconductor wafers fixed on the pickup tape.

Subsequently, a plurality of semiconductor wafers on the pickup tape are picked up and the semiconductor wafer is fixed on a substrate or the like to manufacture a semiconductor device. In addition, the pickup tape is not particularly limited, and can be composed of, for example, an adhesive sheet provided with a base material and an adhesive layer provided on one side of the base material.

Furthermore, it is also possible to use an adhesive tape instead of a pickup tape. The adhesive tape may include a laminate of a film-like adhesive and a release sheet, a laminate of a dicing tape and a film-like adhesive, and an adhesive layer and a release sheet composed of both a dicing tape and a die bonding tape. Cutting, die bonding tape, etc. In addition, before attaching the pickup tape, a film-like adhesive may be attached to the back side of the singulated semiconductor wafer. When a film-like adhesive is used, the film-like adhesive may have the same shape as the wafer.

When using an adhesive tape, before attaching a pickup tape, etc., when attaching a film-like adhesive to the back side of a singulated semiconductor wafer, pick up a plurality of semiconductors on the adhesive tape, the pickup tape, etc. together The wafer is divided into an adhesive layer having the same shape as the semiconductor wafer. Then, the semiconductor wafer is fixed on the substrate or the like through the adhesive layer to manufacture the semiconductor device. The division of the adhesive layer can be performed using laser, flare, etc.

Above, the adhesive tape of the present invention mainly describes an example of a method of singulating semiconductor wafers using a pre-dicing method, but the adhesive tape of the present invention can also be used for general back grinding, and can also It is used to temporarily fix the workpiece during processing of glass, ceramics, etc. In addition, it can be used as a variety of re-peelable adhesive tapes. Examples

Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.

The measurement method and evaluation method in the present invention are as follows. [TMA value] A 15 mm (width)×10 mm (length) measuring film formed of the same material as the film or sheet constituting the base material is prepared. Using the 4000SA manufactured by BRUKER, the elongation or shortening (TMA value) of the film for measurement was measured under the conditions of a load of 2 g and a temperature increase rate of 5°C/min, and the value at 60°C was set to the TMA value of 60°C. The measurement conditions other than the above are set according to the operation manual of the measurement device. Ten samples were measured and the average value of the obtained TMA values was calculated. [Dimensional change rate] A 10 cm×10 cm measuring film formed of the same material as the film or sheet constituting the base material is prepared. The size of the film for measurement is a measured value at 23°C. The measurement sample was allowed to stand on a heating machine at 60°C for 3 minutes. Then, after cooling to room temperature (23°C), the length from one side at 23°C (10cm: L ₀ ) before heating, and the length from the same side at 23°C after heating (L ₁ ) are as follows To obtain the rate of dimensional change. Ten samples were measured and the average value of the obtained dimensional change rate was calculated. In addition, the measured value uses the measured value of MD direction. Dimensional change rate (%)=100×(L ₀ －L ₁ )/L ₀

[Tensile modulus of elasticity] A film for measurement of 15 mm (width)×10 mm (length) formed of the same material as the film or sheet constituting the base material is prepared. Using a dynamic viscoelastic device (manufactured by ORIENTEC, trade name "Rheovibron DDV-II-EP1") at a frequency of 11 Hz and a temperature range of -20 to 150°C, the tensile modulus of elasticity of the film for measurement is measured 10 Samples. The average value of the tensile elastic modulus at 23°C is set to E ₂₃ , and the average value of the tensile elastic modulus at 60°C is set to E ₆₀ to obtain a tensile force from 23°C to 60°C. The rate of change of tensile modulus E _(23-60) (%).

[Young's modulus of the first base material] The Young's modulus of the first base material was measured in accordance with JISK-7127 (1999) under the condition of a test speed of 200 mm/min.

[The elastic modulus of the second base material and the maximum value of tanδ] Except for using a release sheet (made by LINTEC Corporation, trade name "SP-PET381031", thickness: 38 μm) instead of the first base material and setting the thickness of the obtained second base material to 200 μm, the following examples, The second base material for the test was produced in the same manner as the second base material of the comparative example. After removing the release sheet on the second base material for the test, a test piece cut to a predetermined size was used, and a dynamic viscoelastic device (manufactured by ORIENTEC, trade name "Rheovibron DDV-II-EP1") was used. The loss elastic modulus and storage elastic modulus are measured under the condition of frequency 11 Hz and temperature range -20～150°C. The value of "loss elastic modulus/storage elastic modulus" at each temperature is calculated as the tanδ at that temperature, and the maximum value of tanδ in the range of -5 to 120°C is set to "tanδ of the second base material" The maximum value".

[Stress relaxation rate of the second base material] The second base material for the test was prepared on the release sheet and cut into 15 mm×140 mm as described above to form a sample. Using a universal tensile testing machine (AUTOGRAPH AG-10kNIS manufactured by SHIMADZU Corporation), and grasping both ends of the sample 20mm, stretching at a speed of 200mm per minute to measure the stress A(N/m at 10% tension) ² ), and the stress B (N/m ² ) after 1 minute from the stop of the tape stretching. Calculate (A-B)/A×100(%) from the values of these stresses A and B as the stress relaxation rate.

[Stripping evaluation] The adhesive tape with a peeling sheet obtained in Examples and Comparative Examples was peeled off and the peeling sheet was attached to a tape bonding machine (made by LINTEC Co., Ltd., trade name "RAD-3510") under the following conditions. Attached to a 12-inch silicon wafer (thickness 760 μm) with grooves formed on the wafer surface by a pre-cut method. Roller height: 0mm Roller temperature: 23°C (room temperature) Machine temperature: 23°C (room temperature) The obtained silicon wafer with adhesive tape was back-ground (pre-diced) and singulated into a square with a thickness of 30 μm and a wafer size of 1 mm. After the back grinding is completed, the grinding surface is polished using DPG8760 manufactured by DISCO. "Gettering DP" manufactured by DISCO is used for the grinding wheel. By this polishing, the damaged parts of the wafer (grinding marks, fragments) are removed. After the dry grinding is completed, confirm whether the end of the adhesive tape is deformed and the number of wafers held at the end of the adhesive tape. The deformation of the end of the adhesive tape is evaluated according to the distance between the adhesive tape and the adsorption machine, and when there is a gap between the adhesive tape and the adsorption machine, it is evaluated as bad. Furthermore, when the wafer group held on the adhesive tape was observed, it was judged as defective when the peeled wafer could be confirmed.

In addition, all mass parts in the following examples and comparative examples are solid content values.

[Example 1] (1) The first base material A polyethylene terephthalate film (Young's modulus: 2500 MPa) with a thickness of 50 μm as the first base material was prepared.

(2) Second base material (Synthesis of urethane acrylate oligomer) The terminal isocyanate urethane prepolymer obtained by reacting polyester diol and isophorone diisocyanate is reacted with 2-hydroxyethyl acrylate to obtain a bifunctional mass average molecular weight (Mw) 5000 Urethane acrylate oligomer (UA-1).

(Preparation of the second base material forming composition) 40 parts by mass of the urethane acrylate oligomer (UA-1) synthesized above, 40 parts by mass of isobornyl acrylate (IBXA), and 20 parts by mass of phenylhydroxypropyl acrylate (HPPA) are also blended As a photopolymerization initiator, hydroxycyclohexyl phenyl ketone (manufactured by BASF, product name "IRGACURE 184") 2.0 parts by mass and phthalocyanine-based pigment 0.2 parts by mass were used to prepare a second substrate forming composition.

(3) Laminated substrate The second substrate-forming composition obtained above is applied to one side of the first substrate, and ultraviolet irradiation is performed under the conditions of illuminance 160mW/cm ² and irradiation amount 500mJ/cm ² The composition for forming the second base material was cured to obtain a laminated base material having a second base material having a thickness of 30 μm on the first base material.

(4) Preparation of adhesive composition Acrylic polymer (b) obtained by copolymerizing 65 parts by mass of butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA), and 15 parts by mass of 2-hydroxyethyl acrylate (2HEA), The energy ray-curable acrylic resin was obtained by reacting 2-methylpropoxyethyl isocyanate (MOI) with 80 mol% of the total hydroxyl groups in the acrylic polymer (b). Mw: 500,000).

To 100 parts by mass of the energy ray-curable acrylic resin, 6 parts by weight of polyfunctional urethane acrylate (trade name: SHIKOH UT-4332, manufactured by Nippon Synthetic Chemical Industry Co., Ltd.) added an energy ray-curable compound, isocyanate The cross-linking agent (manufactured by TOSOH Co., Ltd., trade name: CORONATE L) uses light composed of bis(2,4,6-trimethylbenzyl)phenylphosphine oxide with a solid content basis of 0.375 parts by mass. 1 part by weight of the polymerization initiator was diluted with a solvent to prepare a coating solution of the adhesive composition.

(5) Manufacture of adhesive tape The coating liquid of the adhesive composition obtained above was applied on the peeling treatment surface of a peeling sheet (made by Lintec Co., Ltd., trade name: SP-PET381031) so as to have a thickness of 20 μm after drying, and heated After drying, the adhesive layer is formed on the release sheet. This adhesive layer was attached to the surface of the first base material of the laminated base material to obtain an adhesive tape with a release sheet. In addition, the storage modulus of the adhesive layer at 23°C is 0.15 MPa. In addition, the storage elastic modulus of the second base material at 23° C. is 250 MPa, the stress relaxation rate is 90%, and the maximum value of tan δ is 1.24.

[Example 2] It was obtained in the same manner as in Example 1 except that a composite film (thickness 80 μm) of low-density polyethylene 27.5 μm/polyethylene terephthalate 25 μm/low-density polyethylene 27.5 μm was used instead of the laminated base material. Adhesive tape.

[Comparative Example 1] An adhesive tape was obtained in the same manner as in Example 1, except that a commercially available polyvinyl chloride film (thickness 80 μm) was used as the base material instead of the laminated base material.

[Comparative Example 2] An adhesive tape was obtained in the same manner as in Example 1, except that NEWCREL (registered trademark: Mitsui DUPONT FLUOROCHEMICALS) of an ethylene/methacrylic acid copolymer film (thickness 80 μm) was used instead of the laminated base material.

The characteristics of the base materials used in the examples and comparative examples were evaluated, and the peeling evaluation was performed using the respective adhesive tapes. The results are shown in Table 1.

[Table 1]

From the above results, it can be seen that when the absolute value of the TMA value at 60°C is 30 μm or less, even if dry polishing is performed, the adhesive tape does not deform and the wafer can be held well. In addition, through the tests using the adhesive tapes described in detail in the examples and comparative examples, and various adhesive tapes, it can be confirmed that when the absolute value of the TMA value at 60°C is 30 μm or less, good results can be obtained. Similarly, for the absolute value of the dimensional change rate at 60°C for 3 minutes, and the elastic modulus change rate E _(23-60) (%), by using various adhesive tape tests, it can be confirmed that they are below 0.8% and 30%, respectively. In the following cases, good results can be obtained.

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Claims (7)

An adhesive tape comprising a substrate and an adhesive layer provided on one side of the substrate, The absolute value of the 60°C TMA value of the aforementioned substrate is 30 μm or less. The adhesive tape as described in item 1 of the patent application scope, in which the absolute value of the dimensional change rate is 0.8% or less after holding the aforementioned substrate at 60°C for 3 minutes. Adhesive tape as described in item 1 or 2 of the patent application scope, obtained from the tensile modulus of elasticity (E ₂₃ ) at 23°C and the tensile modulus of elasticity (E ₆₀ ) at 60°C of the aforementioned substrate The elastic modulus change rate E _(23-60) is below 30%. The adhesive tape as described in any one of claims 1 to 3, wherein the back surface of the semiconductor wafer with grooves formed on the surface of the semiconductor wafer is ground and the semiconductor wafer is monolithic by this grinding In the step of turning into a semiconductor wafer, it is used to attach to the surface of the semiconductor wafer. The adhesive tape as described in item 4 of the patent application scope includes the step of performing dry grinding after singulating the semiconductor wafer into a semiconductor wafer. A method for manufacturing a semiconductor device includes the following steps: The step of forming a trench from the surface side of the semiconductor wafer; The step of attaching the adhesive tape as described in any one of items 1 to 4 of the patent application scope to the surface of the semiconductor wafer; A step of singulating a semiconductor wafer with the adhesive tape attached to the surface and the groove formed thereon, grinding it from the back side and removing the bottom of the groove to form a plurality of wafers; and The step of peeling the adhesive tape from the aforementioned plurality of wafers. The method for manufacturing a semiconductor device as described in item 6 of the patent application scope includes the step of performing dry grinding after singulating the semiconductor wafer into a semiconductor wafer.