TW201944620A - Method of adjusting light distribution characteristics of light emitting element, and method of manufacturing light emitting element - Google Patents

Abstract

Provided is a method of adjusting the light distribution characteristics of a light emitting element, the method adjusting the light distribution characteristics during manufacture of a light emitting element and comprising : forming a light emitting layer and a window layer/support substrate on a starting substrate; removing the starting substrate; forming a first ohmic electrode on a surface of a first semiconductor layer; removing a part of at least the first semiconductor layer and an active layer; forming a second ohmic electrode on a second semiconductor layer or the window layer/support substrate; and forming a recess on a light-extracting surface side of the window layer/support substrate. Desired light distribution characteristics of the light emitting element are set in advance, and, on the basis of the desired light distribution characteristics, at least one of adjustment of the shape of the recess during recess formation and adjustment of a roughened region in a step of roughening the window layer/support substrate is performed to adjust the light distribution characteristics of the light emitting element being manufactured to the desired light distribution characteristics that have been set. Thus, there are provided a method of adjusting the light distribution characteristics of a light emitting element and a method of manufacturing a light emitting element whereby the light distribution characteristics, such as light distribution angle, can be adjusted as desired.

Description

Method for adjusting light distribution characteristics of light-emitting element and method for manufacturing light-emitting element

The present invention relates to a method for adjusting the light distribution characteristics of a light-emitting element and a method for manufacturing a light-emitting element.

Products such as chip-on-board (COB) are used as LED chip mounting methods for applications such as lighting due to their superior heat dissipation from LED elements. When LEDs are mounted in COBs or the like, they must be flip-chip mounted where the wafer is directly bonded to the substrate. In order to achieve flip-chip mounting, a flip-chip having conductive pads having different polarities on the surface of one side of the light-emitting element must be fabricated. In addition, the surface on the opposite side of the surface on which the pads for conducting electricity are provided must be made of a material having a light extraction function.

When a flip-chip is produced from yellow to red LEDs, an AlGaInP-based material is used as the light-emitting layer. Since AlGaInP-based materials do not have bulk crystals, and the LED part is formed by an epitaxial method, the starting substrate will choose a material different from AlGaInP. Most of the starting substrates are GaAs or Ge, and these substrates have the characteristic of absorbing light in visible light. Therefore, when a flip-chip is fabricated, the starting substrate is removed. However, the epitaxial layer forming the light emitting layer is an extremely thin film, so it cannot stand on its own after the starting substrate is removed. Therefore, it is necessary to replace the starting substrate with a material and a structure that have a function of a window layer that is slightly transparent to the light emission wavelength as a light emitting layer and a thickness sufficient to make it stand on its own as a supporting substrate.

As a replacement material having a function of a window layer and supporting a substrate, GaP, GaAsP, sapphire, and the like are selected. Regardless of which material is selected, the materials are different from AlGaInP-based materials. Therefore, mechanical properties such as lattice constant, thermal expansion coefficient, and Young's coefficient are different from those of AlGaInP-based materials.

As such a technique, Patent Document 1 describes a method of forming a window layer and supporting a substrate by growing and directly bonding GaP crystals. In addition, Patent Document 2 discloses a method of growing GaP crystals to form a window layer and supporting a substrate.

However, when flip-chip mounting is performed using a light-emitting element having a quaternary active layer and a GaP window layer, it is necessary to control the light distribution characteristics to improve the degree of freedom in the design of the lens covering the light-emitting element.
For example, Patent Document 3 describes a technique of forming a trapezoidal shape on a light extraction side of a light emitting element having a quaternary active layer and a GaP window layer.
In addition, Patent Document 4 describes a technology of having a rough surface on a light extraction surface side of a light emitting element having a quaternary active layer and a GaP window layer.

However, in the technique of Patent Document 3, as long as the thickness of the window layer is not changed, it is difficult to greatly change the angle of the trapezoidal shape, and it is also difficult to change the size of the flat portion.
In addition, although the technique of Patent Document 4 is a technique suitable for obtaining uniform and uniform light distribution across all directions, it is difficult to arbitrarily change the light distribution angle.
Therefore, I am pursuing a technology in which a light distribution characteristic such as a light distribution angle can be arbitrarily adjusted in a light emitting element having a GaP window layer.
[Previous Technical Literature]
[Patent Literature]

[Patent Literature 1] Japanese Patent Laid-Open No. 2015-12028 [Patent Literature 2] Japanese Patent Laid-Open No. 2015-5551 [Patent Literature 3] Japanese Patent Laid-Open No. 2012-143175 [Patent Literature 4] Japanese Patent Laid-Open No. 2015-172730 Bulletin

[Problems to be solved by the invention]
In view of the foregoing problems, an object of the present invention is to provide a method for adjusting light distribution characteristics of a light emitting element and a method for manufacturing the light emitting element, which can adjust light distribution characteristics such as a light distribution angle as desired.
[Technical means to solve problems]

In order to achieve the above object, the present invention provides a method for adjusting light distribution characteristics of a light emitting element. The manufacture of the light emitting element includes: on a starting substrate, a material matching the starting substrate with a lattice matching system, and sequentially Crystal growth to grow the first semiconductor layer, the active layer, and the second semiconductor layer to form a light-emitting layer; joining the window layer and the support substrate and the light-emitting layer to each other or growing the window layer and the support substrate epitaxially A step of forming a window layer and a supporting substrate on the light emitting layer; a step of removing the starting substrate; a step of forming a first ohmic electrode on a surface of the first semiconductor layer; removing the first semiconductor layer and a part of the active layer Forming a removing step of removing the portion; forming a second ohmic electrode on the second semiconductor layer of the removing portion or on the window layer and supporting substrate; and forming a recessed portion on the light extraction surface side of the window layer and supporting substrate A recess forming step; adjusting the light distribution characteristics of the manufactured light emitting element during the manufacturing of the light emitting element, wherein the method for adjusting the light distribution characteristics of the light emitting element The desired light distribution characteristics of the light-emitting element are set in advance, and based on the set desired light distribution characteristics, the shape of the recessed portion to be formed in the recessed portion forming step and the surface of the window layer and the support substrate are roughened. One or more of the adjustments of the roughened region in the roughening step are performed, whereby the light distribution characteristics of the manufactured light emitting element are adjusted to the desired light distribution characteristics that have been set.

In this way, the shape of the recessed portion formed on the light extraction surface side of the window layer and support substrate is adjusted based on the predetermined desired light distribution characteristics, and the roughened region of the window layer and support substrate is adjusted in the roughening step. By performing one or more of these, the light distribution characteristics (for example, light distribution angle, light distribution intensity, etc.) of the manufactured light emitting element can be easily adjusted to the above-mentioned set desired light distribution characteristics. Fine adjustment of the light distribution characteristics is possible, and light emitting elements having various light distribution characteristics can be obtained.

At this time, as the shape of the concave portion, the depth of the concave portion can be adjusted. In addition, as the shape of the recessed portion, the cross-sectional shape of the recessed portion can be adjusted.

Further, as the adjustment of the roughened region in the roughening step, the bottom surface inside the recessed portion, the side surface inside the recessed portion, the light extraction surface of the window layer and the support substrate, and the window layer and the support substrate can be adjusted. One or more of the sides are roughened.

In this way, adjustment of the shape of the recessed portion and adjustment of the roughened region can be easily performed, and light distribution characteristics can be easily adjusted.

In addition, the present invention provides a method for manufacturing a light-emitting element, and the light-emitting element is manufactured by adjusting the light-distribution characteristic of the light-emitting element of the present invention as desired while adjusting the light-distribution characteristic.

With such a manufacturing method, it is possible to easily manufacture a light-emitting element having a desired light distribution characteristic by using a method of adjusting the light distribution characteristic.
[Contrast with the effect of the prior art]

As described above, according to the present invention, the light distribution characteristics of the manufactured light-emitting element can be easily adjusted to a desired light distribution characteristic that is set in advance. Next, it is possible to easily produce a light-emitting element system having desired light distribution characteristics.

Hereinafter, the present invention will be described in more detail with reference to the drawings, but the present invention is not limited thereto.
(First implementation type)
FIG. 1 shows a first embodiment of a method for manufacturing a light-emitting element including a method for adjusting light distribution characteristics of a light-emitting element according to the present invention.
As shown in FIG. 1 (A), when an AlGaInP-based epitaxial wafer 001 is manufactured, a starting substrate 100 such as GaAs, which is inclined by 15 degrees in the [001] direction, is prepared.

Secondly, on the starting substrate 100, at least a first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103 are sequentially formed by epitaxial growth using a material that is a lattice matching system with the starting substrate 100. Luminescent layer 107.

Specifically, on the starting substrate 100, an organic metal vapor phase growth (MOVPE) method is used, where (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) The formed N cladding layer (first semiconductor layer 101), an active layer 102 made of (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6), and A P cladding layer (second semiconductor layer 103) made of (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0.4 ≦ y ≦ 0.6) is formed. Secondly, it is possible by _{Ga y In 1-y P (} 0.0 ≦ y ≦ 1.0) formed by the composition of the intermediate layer 104 and the window layer has a thickness of 0.5μm or more formed by the GaP 105 to be sequentially laminated.

These production methods are not limited to the MOVPE method, and may be produced by a molecular beam epitaxial (MBE) method or a chemical beam epitaxial (CBE) method.

Next, a window layer and supporting substrate 106 having a GaAs _z P _1-z (0.0 ≦ z ≦ 0.1) having a thickness of, for example, 100 μm, which is connected to the window layer 105 made of GaP, is formed. The window layer and support substrate 106 can be formed by bonding, or can be formed by a MOVPE method, an MBE method, or an HVPE method.

As shown in FIG. 1 (B), after the window layer and support substrate 106 is formed, for example, a wafer 011 in which the GaAs starting substrate 100 of the AlGaInP-based epitaxial wafer 001 is removed by chemical etching is formed. The chemical etching solution and AlGaInP-based materials have better etching selectivity, and are generally removed with an ammonia-containing etchant.

After removing the GaAs starting substrate 100, as shown in FIG. 1 (C), a first ohmic electrode 151 is formed on the lower cladding layer (first semiconductor layer 101) of the wafer 011, and at least the first semiconductor is cut off A part of the layer 101 and the active layer 102 (removed part 120). A second ohmic electrode 161 is formed on the second semiconductor layer 103 or window layer of the removed part 120 and part of the supporting substrate 106.
In the example shown in FIG. 1 (C), a part of the first semiconductor layer 101 to the window layer 105 is removed, and a second ohmic electrode 161 is formed on the window layer and the support substrate 106.

Among the non-removed portions 110 (regions other than the removed portion 120), the dielectric portion 140 can be provided in at least a part of the region 111 having no first ohmic electrode 151.
The dielectric portion 141 can be provided on at least a part of the step portion 130 between the non-removed portion 110 and the removed portion 120.
Next, a dielectric portion 142 may be provided in at least a part of the region 121 other than the second ohmic electrode 161 among the removal portions 120 to obtain a wafer A01.

In this embodiment, the case where all of the dielectric portion 140, the dielectric portion 141, and the dielectric portion 142 are provided is exemplified, but it is not necessary to have all of them, and the same effect can be obtained even if only a part of them is provided.
In addition, in this embodiment, although the structure of the region 111 of the first semiconductor layer 101 is shown by way of example, only the structure of the dielectric portion 140 can be used, but it can also be used in the region of the dielectric portion 140 and the region 111 of the first semiconductor layer 101. A light reflecting film or a light reflecting portion is provided in between, or a light reflecting film or a light reflecting portion may be provided on one side of a surface not in contact with the region 111 of the first semiconductor layer 101 of the dielectric portion 140.

In addition, in this embodiment, although the case where the region 111 has a flat surface is exemplified, it may be a surface having unevenness. The uneven surface may be a simple rough surface by wet etching, a faceted rough surface with a facet, or a patterned pattern by photolithography with an interval of tens of μm to hundreds of nm. A roughened surface and a photon roughened surface having a chirped shape with an interval of several nm to several hundreds of nm.

In addition, in this embodiment, although the stepped portion 130 is exemplified by a flat surface having no unevenness, it may be a surface having unevenness.
In addition, in the present embodiment, although the removal portion 120 is exemplified by a flat surface having no unevenness, it may be a surface having unevenness.

As a next step, although a recessed portion is formed on the light-extracting surface side of the window layer and support substrate 106 (recessed portion forming step), a desired light distribution characteristic of a light-emitting element to be manufactured is set here in advance. There is no particular limitation on the timing of the setting, as long as it is before the roughening step described in the formation of the recesses or the second embodiment described later. For example, it may be before the preparation of the starting substrate 100.
In addition, although the shape of the recessed portion in the recessed portion forming step is adjusted based on the set desired light distribution characteristics, the relationship between the adjustment situation and the light distribution characteristics obtained by the adjustment may be performed separately in advance. Experiment and investigate first. By doing so, it is possible to more accurately adjust the light distribution characteristics as desired, and it is possible to obtain a light emitting element having a light distribution characteristic as expected.

Next, in the recess forming step, a photoresist pattern is formed on the first surface (light extraction surface) 01A of the wafer A01 having the window layer and the support substrate 106 based on the desired light distribution characteristics set by photolithography. The recess 11A is formed by etching from the 01A side toward the upper cladding layer (the second semiconductor layer 103). Etching can be performed regardless of whether a wet etching method or a dry etching method is selected. In the case of the wet etching method, a hydrochloric acid-based etching solution can be used, and in the case of the dry etching method, a chlorine-based gas can be used for etching.

The projection viewing angle shape (that is, the cross-sectional shape) of the concave portion can be selected to include a rectangular polygon, a circle, and other arbitrary shapes and sizes. For example, the shape shown in FIG. 5 is possible. FIG. 5 (A) shows a case where the projection viewing angle is rectangular. (B) of FIG. 5 is a case where the projection viewing angle is rectangular and the corners have R (chamfer). (C) of FIG. 5 is a case where the projection viewing angle is circular. (D) of FIG. 5 is a case where the projection viewing angle is rhombic. FIG. 5 (E) shows a case where the projection viewing angle is a polygon. (F) The recessed part of FIG. 5 is a case where the projection angle of view is a rectangle arrange | positioned at four corners. (G) The recessed part of FIG. 5 is a case where the projection viewing angle is a rectangular groove shape. (H) The recessed part of FIG. 5 is a case where many projection rectangles are arrange | positioned at a viewing angle. The (I) system recessed part of FIG. 5 is a case where a rectangular groove is arrange | positioned in multiple projection angles.

In addition, the depth of the recessed portion is not particularly limited, and can be adjusted to an arbitrary depth within a range of 1 μm or more and reaching the light emitting layer, for example. In order to obtain more favorable adjustment and change of the light distribution characteristics, it is better to set a depth of 5 μm or more. From the viewpoint of a low yield at the time of crystal grain formation, it is preferable that the depth is not more than about half the thickness of the window layer and the supporting substrate.
By adjusting the cross-sectional shape and depth of these recesses, the light distribution characteristics can be easily adjusted.

Although the cross-sectional shape of the recess can be any shape according to the desired light distribution characteristics, the wet etching method is used to have a faceted structure, and the dry etching method is used to have a flat curve or a cross section. Comprehensive gentle noodles.
After the recessed portion 11A is formed, it is singulated from a wafer shape into a crystal grain by a scribe / split method or a blade cutting method (a light emitting element 170).

With such an adjustment method of the light distribution characteristics of the present invention and a method of manufacturing a light emitting element using the adjustment method, a light emitting element adjusted such that the light distribution characteristics become a predetermined desired light distribution characteristic can be surely obtained.

Then, in the above-mentioned first embodiment, a method for manufacturing the light distribution characteristics of the manufactured light-emitting element by adjusting the shape of the concave portion to a desired light distribution characteristic set in advance has been described. In the following, in addition to the adjustment of the shape of the recessed portion, the adjustment of the roughened region in the roughening step of roughening the window layer and the surface of the supporting substrate is also performed, and an adjustment method and a manufacturing method of a desired light distribution characteristic as set can be obtained as The second embodiment to the fourth embodiment will be described.
Further, the present invention is not limited to this, as long as the recessed portion is formed, the shape is not specifically adjusted, and only the adjustment of the roughened region can be used to adjust the light distribution characteristics.

In addition, the roughened area in the roughening step is not particularly limited, and may be, for example, a bottom surface inside the recessed portion, a side surface inside the recessed portion, a light extraction surface of the window layer and supporting substrate, and a side surface of the window layer and supporting substrate More than one area. Even so, it is possible to easily adjust the light distribution characteristics, and it is possible to easily obtain a predetermined desired light distribution characteristic.

(Second implementation type)
FIG. 2 shows a second embodiment of the method for manufacturing a light-emitting element according to the present invention.
Based on a predetermined desired light distribution characteristic, before forming the recessed portion 21A, a roughening process (roughening step) is performed on the first surface (light extraction surface) 02A of the wafer A02 having the window layer and supporting substrate 206, Except for this, it is basically the same as the first embodiment, so the description is omitted. The roughening treatment is performed by using a mixed solution containing fluorine and iodine to obtain a roughened surface.
As shown in FIG. 2, the bottom surface 21C inside the recessed portion 21A and the light extraction surface 02A of the window layer and support substrate 206 are roughened.

(Third implementation type)
FIG. 3 shows a third embodiment of the method for manufacturing a light-emitting element according to the present invention.
Based on a predetermined desired light distribution characteristic, after forming the recessed portion 31A, a roughening process (roughening step) is performed on the first surface (light extraction surface) 03A side of the wafer A03 having the window layer and supporting substrate 306, Except for this, it is basically the same as the first embodiment, so the description is omitted. The roughening treatment is performed by using a mixed solution containing fluorine and iodine to obtain a roughened surface.
As shown in FIG. 3, the bottom surface 31C and the side surface 31B inside the recessed portion 31A, and the light extraction surface 03A of the window layer and support substrate 306 are roughened.

(Fourth implementation type)
FIG. 4 shows a fourth embodiment of the method for manufacturing a light-emitting element according to the present invention.
Based on the preset desired light distribution characteristics, after the recess 41A is formed, it is singulated from a wafer shape into a crystal shape and a wafer is formed by a scribe / split method or a blade cutting method. The wafers on the pedestal are spread out at a certain interval. After the space between the wafers is vacated, the wafers are subjected to a roughening process (roughening step). Other than that, the wafers are basically the same as the first embodiment, so descriptions are omitted. The roughening treatment is performed by using a mixed solution containing fluorine and iodine to obtain a rough surface. In addition, by roughening the crystallized wafer, not only the first surface 04A (light extraction surface) side, but also the side surface 04B can be roughened.
As shown in FIG. 4, the bottom surface 41C and the side surface 41B inside the recessed portion 41A, and the light extraction surface 04A and the side surface 04B of the window layer and support substrate 406 are roughened.
[Example]

Examples and Comparative Examples are given below to explain the present invention more specifically, but the present invention is not limited to these.
(Example 1)
On the GaAs (001) starting substrate, a double hetero (DH) layer was formed as a functional layer by the MOVPE method. The double heterogeneous layer is composed of a lower cladding layer, an active layer, and an upper cladding layer. The composition of the cladding layer is (Al _x Ga _1-x ) _y In _1-y P (0.6 ≦ x ≦ 1.0, 0.4 ≦ y ≦ 0.6). In this embodiment, as the lower cladding layer, it is n-type AlInP. The cladding layer has a two-layer structure of 0.7 μm (the impurity concentration is 3.0E + 17 / cm ³ ) and the n-type Al _0.6 GaInP layer is 0.3 μm (the impurity concentration is 1.0E + 17 / cm ³ ).
The active layer is selected from (Al _x Ga _1-x ) _y In _1-y P (0.15 ≦ x ≦ 0.8, 0.4 ≦ y ≦ 0.6), and the composition x and y are changed according to the wavelength. Multiple active layers are used in this embodiment. The film thicknesses of the active layer and the barrier layer are changed according to the required wavelength, and each is adjusted in a range of 4 to 12 nm in accordance with the wavelength.
As the upper cladding layer, the p-type AlInP cladding layer was 0.1 μm (with an impurity concentration of 1.0E + 17 / cm ³ ) and the p-type Al _0.6 GaInP layer was 0.9 μm (with an impurity concentration of 3.0E + 17 / cm ³ ). Two-story structure.

On the DH layer, a buffer layer (intermediate composition layer) GaInP and a GaP window layer were formed, and a GaP window layer and a supporting substrate were formed to 100 μm by a MOVPE method and a VPE method.

After the GaP window layer and the support substrate are formed, the GaAs starting substrate is removed by a wet etching method to serve as a freestanding substrate, and a first ohmic electrode is formed on the removing surface of the starting substrate. The first ohmic electrode is made of an Au electrode containing Si, Zn, and S, and has a film thickness of 1.5 μm.
A part of the DH layer is cut out by a photolithography method and an etching method, and a region where the light emitting layer and a region where the GaP window layer and the supporting substrate are exposed are provided are provided.
A second ohmic electrode is formed on the exposed area. The second ohmic electrode is made of an Au electrode containing Be, and has a film thickness of 1.5 μm.

Here, compared with a light-emitting element having no recessed portion on the light-extraction surface side of the window layer and supporting substrate as in the comparative example described later, the light distribution intensity (relative light distribution) at a light distribution angle near zero degrees is The improved light distribution characteristics are set, and the recessed portions are formed as described below and the shape is adjusted so that the set light distribution characteristics can be obtained.

First, a SiO ₂ film for etching a mask is formed on the light extraction surface side of the GaP window layer and the supporting substrate, and a mask having a part of the SiO ₂ film as an opening is formed by a photolithography method and a hydrofluoric acid wet etching method. A part of the GaP window layer and the supporting substrate of the circular SiO ₂ film opening as shown in FIG. 5 (C) was etched by a dry etching method. The etching of the window layer and the support substrate was performed by a dry etching method using a chlorine-containing gas to form a recessed portion having a depth of 10 μm. In addition, a recess having a depth of 20 μm was produced in the same manner.

After the recess is formed, the light-emitting element as shown in FIG. 1 is manufactured by singulating / splitting the wafer from a wafer shape into a crystal grain.

(Example 2)
Before forming the recessed portions, the first surface (light extraction surface) having a window layer and a supporting substrate of the wafer is roughened with an etching solution containing hydrofluoric acid, iodine and hydrochloric acid, and then a recessed portion having a depth of 20 μm is formed. Except for this, a light-emitting element shown in FIG. 2 was manufactured in the same manner as in Example 1.

(Example 3)
After forming a recess with a depth of 20 μm, the first surface (light extraction surface) of the wafer having a window layer and a supporting substrate is roughened with an etching solution containing hydrofluoric acid, iodine, and hydrochloric acid. The light-emitting element shown in FIG. 3 was manufactured in the same manner as in Example 1.

(Example 4)
After the recesses with a depth of 20 μm are formed, they are singulated from the wafer shape into crystal grains and formed into wafers by a scribe / split method. After the wafers are formed, the wafers supported on the pedestal are dispersed at a certain interval. A light-emitting element shown in FIG. 4 was produced in the same manner as in Example 1 except that the gap between the wafers was removed, and roughened with an etching solution containing hydrofluoric acid, iodine, and hydrochloric acid.

(Comparative example)
A light-emitting element was produced in the same manner as in Example 1 except that no recessed portion was formed. That is, neither the window layer nor the support substrate has any concave portions or rough areas.

(Results of Examples 1 to 4 and Comparative Examples)
FIG. 6 shows the difference in light distribution characteristics between the case where the depth of the recessed portion is 10 μm and 20 μm in Example 1 when the thickness of the window layer and the supporting substrate is 100 μm and the comparative example in which the recessed portion is not provided.
Compared with the comparative example, the light distribution intensity tends to be low near the light distribution angle of zero degrees, and the light emitting device manufactured by implementing the method for adjusting the light distribution characteristics of the present invention (Example 1) becomes as expected, Compared with the comparative example, the light distribution intensity near the light distribution angle of zero degrees is improved. In addition, it is possible to adjust so that the light distribution intensity near the light distribution angle of zero degrees increases as the depth of the concave portion becomes deeper.

In FIG. 7, the light distribution characteristics in the wafer types of Examples 1 to 4 and the light distribution characteristics of the comparative example are compared with a depth of 20 μm. It was found that, as shown in FIG. 7, the light distribution characteristics are different from each other. Any of Examples 1 to 4 can increase the light distribution intensity near the zero light distribution angle as expected. In addition, in Example 4, it is possible to further expand the range of light distribution angles in which a high light distribution intensity such as around the light distribution angle of zero degrees can be obtained as desired.
As described above, according to the present invention, it is possible to obtain a variety of light-emitting elements which are fine-tuned according to desired light distribution characteristics.

In addition, the present invention is not limited to the above-mentioned embodiments. The above implementation mode is an example, and anyone who has the same technical idea and substantially the same structure as those described in the patent application scope of the present invention to produce the same effect is included in the technical scope of the present invention no matter what.

001‧‧‧AlGaInP series epitaxial wafer

011‧‧‧wafer

100‧‧‧Starting substrate

101‧‧‧First semiconductor layer

102‧‧‧active layer

103‧‧‧Second semiconductor layer

104‧‧‧Intermediate composition layer

105‧‧‧Window layer

106‧‧‧ Window layer and supporting substrate

107‧‧‧Light-emitting layer

110‧‧‧non-removal department

111‧‧‧area

120‧‧‧Removal department

121‧‧‧area

130‧‧‧step difference

140‧‧‧Dielectrics Department

141‧‧‧Dielectrics

142‧‧‧Dielectrics

151‧‧‧first ohm electrode

161‧‧‧Second ohmic electrode

170‧‧‧Light-emitting element

206‧‧‧Window layer and supporting substrate

306‧‧‧Window layer and supporting substrate

406‧‧‧Window layer and supporting substrate

01A‧‧‧First side (light extraction side)

02A‧‧‧First side (light extraction side)

03A‧‧‧First side (light extraction side)

04A‧‧‧First side (light extraction side)

04B‧‧‧Side

11A‧‧‧Concave

21A‧‧‧Concave

21C‧‧‧Underside

31A‧‧‧Concave

31B‧‧‧Side

31C‧‧‧Underside

41A‧‧‧Concave

41B‧‧‧Side

41C‧‧‧Underside

A01‧‧‧Wafer

A02‧‧‧Wafer

A03‧‧‧Wafer

FIG. 1 is a schematic diagram showing a first embodiment of a method for manufacturing a light-emitting element according to the present invention. Among them, (A) is after the step of forming the window layer and the supporting substrate, (B) is after the step of removing the starting substrate, and (C) is after the step of forming the recess.

FIG. 2 is a schematic diagram showing a second embodiment of the method for manufacturing a light-emitting element according to the present invention.

FIG. 3 is a schematic view showing a third embodiment of the method for manufacturing a light-emitting element according to the present invention.

FIG. 4 is a schematic view showing a fourth embodiment of the method for manufacturing a light-emitting element according to the present invention.

FIG. 5 is a schematic diagram showing an example of a cross-sectional shape of a recessed portion. (A) is a rectangle, (B) is a rectangle and the corners have R (chamfered), (C) is a circle, (D) is a rhombus, (E) is a polygon, and (F) is a rectangle In the state of the four corners, (G) is a rectangular groove shape, (H) is a state where many rectangles are arranged, and (I) is a state where multiple rectangular grooves are arranged.

FIG. 6 is a diagram showing the light distribution characteristics of the light-emitting elements of Example 1 (two patterns) and a comparative example.

FIG. 7 is an example of a graph showing light distribution characteristics of the light-emitting elements of Examples 1 to 4 and Comparative Examples.

Claims (7)

A method for adjusting light distribution characteristics of a light-emitting element. The manufacture of the light-emitting element includes: A step of forming a light emitting layer on the starting substrate by growing the first semiconductor layer, the active layer, and the second semiconductor layer by sequential epitaxial growth using a material that is a lattice matching system with the starting substrate; A step of forming a window layer and supporting substrate for bonding the window layer and supporting substrate and the light emitting layer or epitaxially growing the window layer and supporting substrate on the light emitting layer; a step of removing the starting substrate; A step of forming a first ohmic electrode on the surface of the first semiconductor layer; A step of removing the first semiconductor layer and a part of the active layer to form a removing portion; Forming a second ohmic electrode on the second semiconductor layer in the removal portion or on the window layer and the support substrate; A recessed portion forming step of forming a recessed portion on the light extraction surface side of the window layer and the support substrate; Adjusting the light distribution characteristics of the manufactured light emitting element during the manufacture of the light emitting element, The method for adjusting the light distribution characteristics of the light emitting element is to set a desired light distribution characteristic of the light emitting element in advance, and Based on the set desired light distribution characteristics, one of the adjustment of the shape of the recessed portion formed in the recessed portion forming step and the adjustment of the roughened region in the roughening step of roughening the surface of the window layer and the support substrate is performed As described above, the light distribution characteristics of the manufactured light-emitting element are adjusted to the desired light distribution characteristics that have been set. The method for adjusting the light distribution characteristics of the light-emitting element according to claim 1, wherein the adjustment of the shape of the concave portion is to adjust the depth of the concave portion. The method for adjusting the light distribution characteristics of the light-emitting element according to claim 1, wherein the adjustment of the shape of the concave portion is to adjust the cross-sectional shape of the concave portion. The method for adjusting the light distribution characteristics of the light-emitting element according to claim 2, wherein the adjustment of the shape of the concave portion is to adjust the cross-sectional shape of the concave portion. The method for adjusting the light distribution characteristics of the light-emitting element according to any one of claims 1 to 4, wherein the adjustment of the roughened region in the roughening step is performed by adjusting the bottom surface of the concave portion and the inner portion of the concave portion. One or more areas of the inner side surface, the light extraction surface of the window layer and support substrate, and the side surface of the window layer and support substrate are roughened. A method of manufacturing a light-emitting element is a method of adjusting a light distribution characteristic of a light-emitting element according to any one of claims 1 to 4, and manufacturing the light-emitting element while adjusting the light distribution characteristic as desired. A method of manufacturing a light-emitting element is a method of adjusting a light distribution characteristic of a light-emitting element according to claim 5, while manufacturing the light-emitting element while adjusting the light distribution characteristic as desired.