TW201942935A - Localized vacuum apparatus and vacuum area forming method - Google Patents

Abstract

This localized vacuum apparatus is provided with: a vacuum forming member which has a pipe passage connectable to an exhaust device, exhausts gas in a space contacting a surface of an object via the pipe passage, and forms a vacuum area; an applicator which applies a force acting on at least one among the object and the vacuum forming member so as to separate the object and the vacuum forming member; and a gap control device which controls a gap between the object and the vacuum forming member, wherein gas in at least a portion of a space around the vacuum area, of which the atmospheric pressure is higher than that of the vacuum area, is exhausted via the pipe passage of the vacuum forming member.

Description

Local vacuum device and method for forming vacuum area

The present invention relates to, for example, a technical field of a partial vacuum device for forming a partial vacuum region and a method for forming a partial vacuum region.

The device for irradiating charged particles radiates the charged particles through a vacuum region in order to prevent the charged particles from being scattered by collision with gas molecules. For example, Patent Document 1 describes a scanning electron microscope that blocks the surroundings of an inspection target portion of an object to be inspected irradiated with an electron beam, which is an example of charged particles, from the outside air to form a local vacuum region. . In such a device (and further, any device that forms a vacuum region), it is necessary to keep the distance between the device used to form the vacuum region and the object (or any other object) at a short distance (for example, 10 μm or less and 1 μm or more). .

[Prior Art Literature]
[Patent Literature]
[Patent Document 1] US Patent Application Publication No. 2004/0144928

According to a first aspect, there is provided a local vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and a gas in a space in contact with a surface of an object is discharged through the pipe to form a vacuum region. A means for applying force to at least one of the object and the vacuum forming member to act to keep the object away from the vacuum forming member; and an interval control device for controlling the object and the vacuum The space between the members is formed, and at least a part of the gas in the space around the vacuum region having a higher air pressure than the vacuum region is exhausted through the pipeline of the vacuum forming member.

According to a second aspect, there is provided a partial vacuum device including a vacuum forming member having a pipe having a first end connected to an exhaust device and a second end connected to a first space in contact with a surface of an object, and The gas in the first space is exhausted through the pipeline to form a vacuum region in the first space with a lower pressure than the second space connected to the first space; At least one of the vacuum-forming members imparts a force acting to keep the object away from the vacuum-forming member; and an interval control device that controls an interval between the object and the vacuum-forming member.

According to a third aspect, there is provided a local vacuum device including a vacuum forming member having a pipe connectable to an exhaust device and discharging gas through the pipe in a state facing a part of a surface of an object, A vacuum region may be formed in a first space that is in contact with a first portion of the surface of the object, and a pressure in the vacuum region is higher than a second space that is in contact with a second portion of the surface that is different from the first portion. The pressure is lower; a device for applying force to at least one of the object and the vacuum forming member so as to keep the object away from the vacuum forming member; and an interval control device for controlling the object And the vacuum forming member.

According to a fourth aspect, a partial vacuum device is provided, comprising: a vacuum forming member having a pipe connectable to an exhaust device; and a state where a surface of an object faces an end of the pipe, and The gas in the space in contact with the surface of the object is exhausted through the pipeline to form a vacuum region; and a device for applying at least one of the object and the vacuum forming member to form the object and the vacuum. A force acting in a manner that the member is distant; and an interval control device that controls an interval between the object and the vacuum forming member.

According to a fifth aspect, there is provided a partial vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and discharging a gas in a space in contact with a surface of an object through the pipe to form a vacuum area. And an interval control device that controls an interval between the object and the vacuum forming member, and at least a portion of a gas in a space around the vacuum region having a higher pressure than the vacuum region passes through the vacuum forming member. The pipeline is discharged from the pipeline, and the interval control device is configured to provide at least one of the object and the vacuum forming member to keep the object away from the vacuum forming member when a predetermined abnormal condition is satisfied. Acting force.

According to a sixth aspect, there is provided a local vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and a gas in a space in contact with a surface of an object is discharged through the pipe to form a vacuum region. And an exhaust device that performs exhaust forming the vacuum region, and interrupts the exhaust forming the vacuum region when a predetermined abnormal condition is satisfied.

According to a seventh aspect, there is provided a partial vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and discharging a gas in a space in contact with a surface of an object through the pipe to form a vacuum region. And a gas supply device that supplies gas to a peripheral region located at least a part of the periphery of the vacuum region when a predetermined abnormal condition is satisfied.

According to an eighth aspect, there is provided a local vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and discharging a gas in a space in contact with a surface of an object through the pipe to form a vacuum area A charged particle irradiation device that irradiates charged particles with a sample; and a blocking member that blocks a path of the charged particles from the vacuum region when a predetermined abnormal condition is satisfied, At least a part of the gas in the space having a higher air pressure than the vacuum region is discharged through the duct of the vacuum forming member, and a path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region.

According to a ninth aspect, there is provided a local vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and a gas in a space in contact with a surface of an object is discharged through the pipe to form a vacuum region. A charged particle irradiation device that irradiates charged particles with a sample; and a sealing member that seals at least a part of the internal space of the charged particle irradiation device when a predetermined abnormal condition is satisfied, At least a part of the gas in the space higher than the vacuum region is discharged through the duct of the vacuum forming member, and the path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region.

According to a tenth aspect, there is provided a local vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and a gas in a space in contact with a surface of an object is discharged through the pipe to form a vacuum area. And a position changing device capable of changing a relative position of the object and the vacuum forming member, at least a part of a gas in a space around the vacuum region having a higher pressure than the vacuum region passes through the vacuum forming member. The pipeline is discharged from the pipeline, and when the position changing device satisfies a predetermined abnormal condition, the object and the vacuum forming member are aligned in a direction parallel to a direction from the object toward the vacuum forming member. In a distant manner, the position of at least one of the vacuum forming member and the object is changed.

According to an eleventh aspect, there is provided a local vacuum device including a vacuum forming member having a pipe connectable to an exhaust device, and passing a gas in a space in contact with a surface of an object held by the holding device through the pipe. Discharging, forming a vacuum region; applying means for applying force to at least one of the holding means and the vacuum forming member to move the holding means away from the vacuum forming member; A force opposite to the force electrically controls an interval between the object and the vacuum forming member, and at least a part of a gas in a space around the vacuum area having a higher pressure than the vacuum area passes through the space. The vacuum forming member is discharged from the pipeline, and the force acting to keep the holding device away from the vacuum forming member is more attractive than the vacuum region attracting the holding device and the vacuum forming member. Large and non-electrical.

According to a twelfth aspect, there is provided a method for forming a vacuum region, comprising using a vacuum forming member having a pipe connectable to an exhaust device, and passing a gas in a space in contact with a surface of an object held by the holding device through the vacuum forming member. Discharge through a pipeline to form a vacuum region; discharge at least a part of the gas around the vacuum region in a space having a higher pressure than the vacuum region through the pipeline; and to the holding device and the vacuum At least one of the forming members is configured to control a distance between the object and the vacuum forming member in a state where a force is applied to move the holding device away from the vacuum forming member forming the vacuum region.

According to a thirteenth aspect, there is provided a method for forming a vacuum region, comprising: using a vacuum forming member having a pipe connectable to an exhaust device, discharging a gas in a space in contact with a surface of an object through the pipe, Forming a vacuum region; discharging at least a part of the gas around the vacuum region in a space having a higher pressure than the vacuum region through the pipeline; and at least one of the object and the vacuum forming member The distance between the object and the vacuum-forming member is controlled in a state where a force is applied to move the object away from the vacuum-forming member that forms the vacuum region.

According to a fourteenth aspect, there is provided a method for forming a vacuum region, comprising: using a vacuum forming member having a pipe connectable to an exhaust device, discharging a gas in a space in contact with a surface of an object through the pipe, Forming a vacuum region; discharging at least a part of a gas in a space around the vacuum region having a higher pressure than the vacuum region through the pipe; and imparting to at least one of the object and the vacuum forming member A force acting to move the object away from the vacuum forming member forming the vacuum region; and controlling an interval between the object and the vacuum forming member.

According to a fifteenth aspect, there is provided a method for forming a vacuum region, comprising: using a vacuum forming member having a pipe connectable to an exhaust device, discharging a gas in a space in contact with a surface of an object through the pipe, Forming a vacuum region; exhausting at least a part of a gas around the vacuum region in a space having a higher pressure than the vacuum region through the pipe; and using a vacuum forming member that controls the object and forms the vacuum region The interval control device for providing a space between at least one of the object and the vacuum-forming member when a predetermined abnormal condition is satisfied, acts to keep the object away from the vacuum-forming member. force.

According to a sixteenth aspect, there is provided a method for forming a vacuum region, comprising: using a vacuum forming member having a pipe connectable to an exhaust device, discharging a gas in a space in contact with a surface of an object through the pipe, Forming a vacuum region; discharging at least a part of the gas in the space around the vacuum region with a higher pressure than the vacuum region through the pipeline; and using a variable position of the object and the vacuum forming member When the predetermined abnormal condition is satisfied, the position changing device changes the position of the object and the vacuum forming member in a direction parallel to the direction from the object toward the vacuum forming member. The position of at least one of the vacuum forming member and the object.

According to a seventeenth aspect, a method for forming a vacuum region is provided, including: discharging a gas in a space in contact with a surface of an object through a pipe to form a vacuum region; and forming a vacuum region around the vacuum region at a pressure higher than the vacuum region. At least a part of the gas in the higher space is discharged through the pipeline; and when a predetermined abnormal condition is satisfied, the exhaust gas forming the vacuum region is interrupted.

According to an eighteenth aspect, a method for forming a vacuum region is provided, including: discharging a gas in a space in contact with a surface of an object through a pipe to form a vacuum region; and forming a vacuum region around the vacuum region at a pressure higher than the vacuum region. At least a part of the gas in the higher space is exhausted through the pipeline; and when a predetermined abnormal condition is satisfied, the gas is supplied to a peripheral region located at least a part of the periphery of the vacuum region.

According to a nineteenth aspect, a method for forming a vacuum region is provided, which includes: discharging a gas in a space in contact with a surface of an object through a pipe to form a vacuum region; At least a part of the gas in the higher space is exhausted through the pipeline; the sample is irradiated with the charged particles passing through the passing space containing at least a part of the vacuum region; and when a predetermined abnormal condition is satisfied, the The path of the charged particles is blocked from the vacuum region.

According to a twentieth aspect, a method for forming a vacuum region is provided, which includes: discharging a gas in a space in contact with a surface of an object through a pipe to form a vacuum region; and forming a vacuum region around the vacuum region at a pressure higher than the vacuum region. At least a part of the gas in the higher space is exhausted through the pipeline; the sample is irradiated with the charged particles passing through the passing space containing at least a part of the vacuum region; and when a predetermined abnormal condition is satisfied, the At least a part of the internal space of the charged particle irradiation device is sealed.

According to a twenty-first aspect, a local vacuum device is provided, comprising: a vacuum forming member that locally forms a vacuum area covering a part of a surface of an object in a space on an object held by the holding device; At least one of the holding device and the vacuum forming member imparts a force acting to keep the holding device and the vacuum forming member away from each other; and an interval control device that applies a force against the force against the force. The interval between the object and the vacuum forming member is electrically controlled so that a force acting to keep the holding device away from the vacuum forming member attracts the holding device and the vacuum forming member more than the vacuum region. Is more attractive and non-electrical.

According to a twenty-second aspect, a local vacuum device is provided, including: a vacuum forming member that locally forms a vacuum area covering a part of the surface of the object in a space on the object; At least one of the vacuum-forming members imparts a force acting to keep the object away from the vacuum-forming member; and an interval control device that controls an interval between the object and the vacuum-forming member.

According to a twenty-third aspect, there is provided a local vacuum device including: a vacuum forming member that can form a vacuum region locally in a space on an object; and an interval control device that controls an interval between the object and the vacuum forming member. When the interval control device satisfies a predetermined abnormal condition, a force is applied to at least one of the object and the vacuum forming member so as to move the object away from the vacuum forming member.

According to a twenty-fourth aspect, there is provided a local vacuum device including: a vacuum forming member that can form a vacuum region locally in a space on an object; and a position changing device that can change a relative position of the object and the vacuum forming member. When the position changing device satisfies a predetermined abnormal condition, the position changing device changes the object and the vacuum forming member away from each other in a direction parallel to a direction from the object toward the vacuum forming member. A position of at least one of the vacuum forming member and the object.

According to a twenty-fifth aspect, a local vacuum device is provided, including: a vacuum forming member that can locally form a vacuum region in a space on an object; and an exhaust device that performs exhaust to form the vacuum region to satisfy a predetermined In the case of abnormal conditions, the exhaust of the vacuum region will be interrupted.

According to a twenty-sixth aspect, there is provided a local vacuum device including: a vacuum forming member that can form a vacuum region locally in a space on an object; and a gas supply device that, when a predetermined abnormal condition is satisfied, is located in the A gas is supplied to a peripheral region of at least a part of the periphery of the vacuum region.

According to a 27th aspect, there is provided a local vacuum device including: a vacuum forming member that can form a vacuum region locally in a space on an object; and a charged particle irradiation device that irradiates a charged object to the object via at least a part of the vacuum region. Particles; and a blocking member that blocks a path of the charged particles from the vacuum region when a predetermined abnormal condition is satisfied.

According to a twenty-eighth aspect, a local vacuum device is provided, comprising: a vacuum forming member that can form a vacuum area locally in a space on an object; and a charged particle irradiation device that irradiates the object with a charge through at least a part of the vacuum area. Particles; and a sealing member that seals at least a part of the internal space of the charged particle irradiation device when a predetermined abnormal condition is satisfied.

According to a 29th aspect, there is provided a method for forming a vacuum region, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on the object held by the holding device; Controlling at least one of the vacuum forming member between the object and the vacuum forming member in a state where at least one of the vacuum forming members is provided with a force acting to move the holding device away from the vacuum forming member forming the vacuum region. interval.

According to a 30th aspect, there is provided a method for forming a vacuum region, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on the object; and forming a vacuum region on the object and the vacuum forming member. At least one of them is configured to control a distance between the object and the vacuum-forming member in a state where a force is applied to move the object away from the vacuum-forming member that forms the vacuum region.

According to a thirty-first aspect, a method for forming a vacuum region is provided, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on the object; and at least one of the object and the vacuum forming member. A person applies a force acting to move the object away from the vacuum forming member forming the vacuum region, and controls an interval between the object and the vacuum forming member.

According to a thirty-second aspect, there is provided a method for forming a vacuum region, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on the object; and using a method for controlling the object and forming the vacuum region. The interval control device for the interval between the vacuum forming members, when a predetermined abnormal condition is satisfied, provides at least one of the object and the vacuum forming member with a distance from the object and the vacuum forming member. Way acting force.

According to a thirty-third aspect, there is provided a method for forming a vacuum region, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on an object; and using the object and the vacuum forming member to change the object. When the predetermined abnormal condition is satisfied, the position changing device of the relative position moves the object away from the vacuum forming member in a direction parallel to the direction from the object toward the vacuum forming member. , Changing the position of at least one of the vacuum forming member and the object.

According to a thirty-fourth aspect, there is provided a method for forming a vacuum region, comprising: exhausting a space on an object to form a vacuum region locally; and exhausting the vacuum region when a predetermined abnormal condition is satisfied Break.

According to a thirty-fifth aspect, a method for forming a vacuum region is provided, which includes: forming a vacuum region locally in a space on an object; and when a predetermined abnormal condition is satisfied, at least a part of the vacuum region is located around the vacuum region. The surrounding area is supplied with gas.

According to a thirty-sixth aspect, a method for forming a vacuum region is provided, comprising: locally forming a vacuum region in a space on an object; irradiating the object with charged particles through at least a portion of the vacuum region; and satisfying a predetermined anomaly In the case of conditions, the path of the charged particles is blocked from the vacuum region.

According to a thirty-seventh aspect, there is provided a method for forming a vacuum region, comprising: locally forming a vacuum region in a space on an object; irradiating the object with charged particles through at least a part of the vacuum region from a self-charged particle irradiation device; and When a predetermined abnormal condition is satisfied, at least a part of the internal space of the charged particle irradiation device is sealed.

The function and other advantages of the present invention will be demonstrated by the embodiments described below.

Hereinafter, embodiments of a partial vacuum device and a method for forming a vacuum region will be described with reference to the drawings. Hereinafter, a scanning electron microscope (SEM) is used to irradiate the electron beam EB to the sample W through the local vacuum region VSP and obtain information about the sample W (for example, the state of the test sample W). Embodiments of a local vacuum device and a method for forming a vacuum region will be described. The sample W is, for example, a semiconductor substrate. However, the sample W may be an object different from the semiconductor substrate. The sample W may be, for example, a disc-shaped substrate having a diameter of about 300 mm and a thickness of about 750 μm to 800 μm. However, the sample W may be a substrate (or an object) having an arbitrary shape and an arbitrary shape. For example, the sample W may be a square substrate used for a display such as a liquid crystal display element or a square substrate used for a photomask.

In the following description, the positional relationship of various constituent elements constituting the scanning electron microscope SEM will be described using an XYZ orthogonal coordinate system defined by X, Y, and Z axes orthogonal to each other. In the following description, for convenience of explanation, the X-axis direction and the Y-axis direction are assumed to be horizontal directions (that is, a predetermined direction in a horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). , Essentially up and down). Furthermore, it is assumed that the + Z side corresponds to the upper side (that is, the upper side), and the -Z side corresponds to the lower side (that is, the lower side). The -Z direction is also referred to as the direction of gravity. The Z-axis direction is a direction parallel to the optical axis AX of the beam optical system 11 described later, which is included in the scanning electron microscope SEM. In addition, the rotation directions (in other words, the tilt directions) about the X-axis, Y-axis, and Z-axis are referred to as the θX direction, θY direction, and θZ direction, respectively.

(1) Structure of Scanning Electron Microscope SEM First, referring to FIGS. 1 to 3, the structure of the scanning electron microscope SEM will be described. FIG. 1 is a cross-sectional view showing the structure of a scanning electron microscope SEM. FIG. 2 is a cross-sectional view showing a configuration of a beam irradiation apparatus 1 included in a scanning electron microscope SEM. FIG. 3 is a perspective view showing a configuration of a beam irradiation apparatus 1 included in a scanning electron microscope SEM. In addition, in order to simplify the drawing, a cross-section of some components of the scanning electron microscope SEM is not shown in FIG. 1.

As shown in FIG. 1, the scanning electron microscope SEM includes a beam irradiation device 1, a platform device 2, a support frame 3, a control device 4, and a pump system 5. The pump system 5 further includes a vacuum pump 51 and a vacuum pump 52.

The beam irradiation apparatus 1 can emit an electron beam EB downward from the beam irradiation apparatus 1. The beam irradiation apparatus 1 can irradiate the sample W held by the stage apparatus 2 disposed below the beam irradiation apparatus 1 with the electron beam EB. In order to irradiate the sample W with the electron beam EB, the beam irradiation device 1 includes a beam optical system 11 and a differential exhaust system 12 as shown in FIGS. 2 and 3.

As shown in FIG. 2, the beam optical system 11 includes a housing 111. The frame 111 is a cylindrical member that extends along the optical axis AX (that is, extends along the Z axis) of the beam optical system 11 and secures a beam passage space SPb1 inside. The beam passing space SPb1 is used as a space through which the electron beam EB passes. In order to prevent the electron beam EB passing through the beam passing space SPb1 from passing through the frame 111 (that is, leaking to the outside of the frame 111), and / or to prevent a magnetic field (so-called interference magnetic field) from the outside of the beam irradiation device 1 from passing through the space The electron beam EB of SPb1 affects, and the frame 111 may be made of a high-permeability material. As an example of a high-permeability material, at least one of a high-permeability alloy (permalloy) and silicon steel can be mentioned. The relative permeability of these high-permeability materials is 1,000 or more.

The beam passing space SPb1 becomes a vacuum space while the electron beam EB is irradiated. Specifically, a vacuum pump 51 is connected to the beam passing space SPb1 via a pipe (that is, a pipe) 117 that is formed in the housing 111 (and further communicates with the beam passing space SPb1). , The side wall member 122 described later). The vacuum pump 51 exhausts the beam passing space SPb1 and further depressurizes the atmospheric pressure so that the beam passing space SPb1 becomes a vacuum space. Therefore, the vacuum space of this embodiment means a space having a pressure lower than the atmospheric pressure. In particular, the vacuum space may also mean a space in which gas molecules are present only to such an extent that the electron beam EB is not properly irradiated to the sample W (in other words, a vacuum degree that does not prevent the electron beam EB from being properly irradiated to the sample W space). The beam passage space SPb1 passes through a beam exit (ie, an opening) 119 formed on the lower surface of the casing 111 and a space (more specifically, a beam passage space of a differential exhaust system 12 described later) outside the casing 111. SPb2) connectivity. The beam passing space SPb1 may be a vacuum space during a period in which the electron beam EB is not irradiated.

The beam optical system 11 further includes an electron gun 113, an electromagnetic lens 114, an objective lens 115, and an electronic detector 116. The electron gun 113 emits an electron beam EB toward the -Z side. Alternatively, instead of the electron gun 113, a photoelectric conversion surface that emits electrons when irradiated with light may be used. The electromagnetic lens 114 controls an electron beam EB emitted from the electron gun 113. For example, the electromagnetic lens 114 may also control the amount of rotation (ie, the position in the θZ direction) of the image formed by the electron beam EB on a predetermined optical surface (for example, an imaginary plane crossing the optical path of the electron beam EB), and the magnification of the image And one of the focus positions corresponding to the imaging position. The objective lens 115 causes the electron beam EB to be at a predetermined reduction ratio on the surface of the sample W (specifically, the surface irradiated by the electron beam EB is oriented toward the + Z side and along the side in the example shown in FIGS. 1 and 2. XY plane surface) WSu imaging. The electron detector 116 is a semiconductor-type electronic detection device (ie, a semiconductor detection device) using a pn junction or a pin junction semiconductor. The electron detector 116 detects electrons (for example, at least one of reflected electrons and scattered electrons. The scattered electrons include secondary electrons) generated by irradiating the sample W with the electron beam EB. The control device 4 determines the state of the sample W based on the detection result of the electronic detector 116. For example, the control device 4 determines the three-dimensional shape of the surface WSu of the sample W based on the detection result of the electronic detector 116. In addition, in this embodiment, the surface WSu of the sample W is ideally a flat surface, and the control device 4 determines the three-dimensional shape of the surface WSu including the shape of the fine uneven pattern formed on the surface WSu. The surface WSu of the sample W may not be flat. The electronic detector 116 may be provided in a differential exhaust system 12 described later.

The differential exhaust system 12 includes a vacuum forming member 121 and a side wall member 122. The side wall member 122 is a cylindrical member extending upward from the vacuum forming member 121. The side wall member 122 houses the frame body 111 (ie, the beam optical system 11) inside. The side wall member 122 is integrated with the beam optical system 11 in a state in which the beam optical system 11 is housed therein, but may be separated from the beam optical system 11. The vacuum forming member 121 is disposed below the beam optical system 11 (ie, the −Z side). The vacuum forming member 121 is connected (ie, coupled) to the beam optical system 11 below the beam optical system 11. The vacuum forming member 121 is connected to the beam optical system 11 and integrated with the beam optical system 11, but may be detachable. A beam passage space SPb2 is formed inside the vacuum forming member 121. 3 shows an example in which the vacuum forming member 121 has a structure in which a vacuum forming member 121-1 having a beam passing space SPb2-1 formed as a part of the beam passing space SPb2 is formed and a beam passing space is formed. A part of the beam passing space SPb2 passes through the vacuum forming member 121-2 of the space SPb2-2, and a part of the beam passing space SPb2 forms the vacuum forming member 121-3 of the space passing through the space SPb2-3 to pass the space SPb2-1. The ~ beams are laminated so as to communicate through the space SPb2-3, but the structure of the vacuum forming member 121 is not limited to this example. The beam passing space SPb2 passes through a beam emission opening (ie, an opening) 1231 formed on the upper surface of the vacuum forming member 121 (in the example shown in FIG. 3, the surface on the + Z side of the vacuum forming member 121-3), and the beam The beam of the optical system 11 communicates through the space SPb1. The beam passing space SPb2 and the beam passing space SPb1 are exhausted (that is, decompressed) by the vacuum pump 51. Therefore, the beam passing space SPb2 becomes a vacuum space while the electron beam EB is irradiated. The beam passing space SPb2 is used as a space through which the electron beam EB from the beam passing space SPb1 passes. In order to prevent the electron beam EB of at least one of the beam passing space SPb1 and the beam passing space SPb2 from passing through at least one of the vacuum forming member 121 and the side wall member 122 (ie, leaking to the outside of the differential exhaust system 12), and / Or in order to prevent the external magnetic field (so-called interference magnetic field) of the beam irradiation device 1 from affecting the electron beam EB passing through at least one of the beam passing space SPb1 and the beam passing space SPb2, at least one of the vacuum forming member 121 and the side wall member 122 It may be made of a high magnetic permeability material. The beam passing space SPb2 may be a vacuum space during a period in which the electron beam EB is not irradiated.

The vacuum forming member 121 further includes an emission surface 121LS that can face the surface WSu of the sample W. In the example shown in FIG. 3, the vacuum forming member 121-1 includes an emission surface 121LS. The beam irradiation device 1 is such that the interval D (ie, the interval D between the beam irradiation device 1 and the sample W in the Z-axis direction) between the emission surface 121LS and the surface WSu becomes the required interval D_target (for example, 10 μm or less and 1 μm or more), it is aligned with the sample W by the interval adjustment system 14 described later. The interval D may also be referred to as a distance in the Z-axis direction between the emission surface 121LS and the surface WSu. The interval adjustment system 14 may be referred to as an interval control device. A beam emission port (ie, an opening) 1232 is formed on the emission surface 121LS. In addition, the vacuum forming member 121 may not include the emission surface 121LS which can face the surface WSu of the sample W. As shown in FIG. 2, the beam passage space SPb2 communicates with the beam passage space SPb3 outside the vacuum forming member 121 via the beam emission port 1232. That is, the beam passage space SPb1 communicates with the beam passage space SPb3 via the beam passage space SPb2. However, the beam passing space SPb2 may not be ensured. That is, the beam passing space SPb1 may directly communicate with the beam passing space SPb3 without passing through the beam passing space SPb2. The beam passing space SPb3 is a local space on the sample W. The beam passage space SPb3 is a local space through which the electron beam EB passes between the beam irradiation device 1 and the sample W (specifically, between the emission surface 121LS and the surface WSu). The beam passage space SPb3 is an irradiation area space irradiated by the electron beam EB on at least the surface WSu that faces (or covers or contacts) the sample W. The beam passing space SPb3 is exhausted (that is, decompressed) by the vacuum pump 51 together with the beam passing space SPb1 and the beam passing space SPb2. In this case, each of the beam passage space SPb1 and the beam passage space SPb2 can also function as an exhaust passage (ie, a pipe) that connects the beam passage space SPb3 and the vacuum pump 51 to exhaust the beam passage space SPb3. Therefore, the beam passing space SPb3 becomes a vacuum space while the electron beam EB is irradiated. Therefore, the electron beam EB emitted from the electron gun 113 is irradiated to the sample W via at least a part of the beam passing space SPb1 to the beam passing space SPb3, which are all vacuum spaces. The beam passing space SPb3 may be a vacuum space during a period in which the electron beam EB is not irradiated.

The beam passing space SPb3 is located farther from the vacuum pump 51 than the beam passing space SPb1 and the beam passing space SPb2. The beam passing space SPb2 is located farther from the vacuum pump 51 than the beam passing space SPb1. Therefore, the degree of vacuum of the beam passing space SPb3 may be lower than the degree of vacuum of the beam passing space SPb1 and the beam passing space SPb2, and the degree of vacuum of the beam passing space SPb2 may be lower than the degree of vacuum of the beam passing space SPb1. In addition, the state of "the degree of vacuum in space B is lower than the degree of vacuum in space A" in this embodiment means "the pressure in space B is higher than the pressure in space A". In this case, the vacuum pump 51 has a degree of exhausting capability in which the degree of vacuum of the beam passing space SPb3 with the possibility of the lowest degree of vacuum can be set so as not to prevent the electron beam EB from properly irradiating the sample W. Degree of vacuum. As an example, the vacuum pump 51 may have a pressure (ie, air pressure) capable of maintaining the beam passing space SPb3 at 1 × 10 ^-3 Pa or less (for example, at a level of approximately 1 × 10 ^-3 Pa to 1 × 10 ^-4 Pa). ) Degree of exhausting capacity. As such a vacuum pump 51, for example, a turbo molecular pump (or another type of high vacuum pump including at least one of a diffusion pump, a refrigerating pump, and a sputtering ion pump) serving as a main pump and an auxiliary pump may be used. Vacuum pump combined with dry pumps (or other types of low vacuum pumps). The vacuum pump 51 may be an exhaust velocity [m ³ / s] that can maintain the pressure (ie, air pressure) of the beam passing space SPb3 at a level of 1 × 10 ^-3 Pa or less.

However, the beam passage space SPb3 is not an enclosed space surrounded by some members (specifically, the frame 111 and the vacuum forming member 121) like the beam passage space SPb1 and the beam passage space SPb2. That is, the beam passing space SPb3 is an open space whose surroundings are not surrounded by some members. Therefore, even if the beam passing space SPb3 is decompressed by the vacuum pump 51, the gas flows into the beam passing space SPb3 from around the beam passing space SPb3. As a result, the degree of vacuum of the beam passing space SPb3 may be reduced. Therefore, the differential exhaust system 12 performs differential exhaust between the beam irradiation device 1 and the sample W, thereby maintaining the vacuum degree of the beam passing space SPb3. That is, the differential exhaust system 12 performs differential exhaust between the beam irradiating device 1 and the sample W, thereby forming a relatively high level of maintenance between the beam irradiating device 1 and the sample W compared with the surroundings. The vacuum degree of the local vacuum region VSP is such that the local vacuum region VSP includes a local beam passing space SPb3. In other words, the differential exhaust system 12 performs differential exhaust such that the local beam passing space SPb3 is contained in the local vacuum region VSP. In addition, the differential exhaust in this embodiment is equivalent to exhausting the beam passing space SPb3 on the one hand by using the following properties: between the sample W and the beam irradiation device 1, since the sample W and the beam irradiation device 1 The exhaust resistance of the gap between 1 maintains the pressure difference between one space (for example, the beam passing space SPb3) and another space different from one space. The beam passing space SPb3 partially covers at least a part of the surface WSu of the sample W (for example, an irradiation area irradiated by the electron beam EB), so the vacuum region VSP also covers at least a part of the surface WSu of the sample W (for example, by an electron The irradiation area of the beam EB irradiation) is partially covered. Specifically, on the emission surface 121LS of the vacuum forming member 121, an exhaust groove (that is, an opening that does not penetrate the vacuum forming member 121) 124 is formed to surround the beam emission port 1232. A vacuum pump 52 is connected to the exhaust groove 124 via a pipe (ie, a pipe) 125 formed on the vacuum forming member 121 and the side wall member 122 so as to communicate with the exhaust groove 124. The first end (ie, one end) of the piping 125 is connected to the vacuum pump 52, and the second end (ie, the other end of the piping 125) is a part that substantially forms the exhaust groove 124 and the injection surface 12LS. Space-like contact between the surfaces WSu of the W. In addition, FIG. 3 shows an example in which the differential exhaust system 12 has a structure in which the pipes 125 are gradually collected from the exhaust tank 124 until they reach the vacuum pump 52. Specifically, FIG. 3 shows an example in which the vacuum-forming member 121-1 in which the exhaust groove 124 is formed is formed with an annular exhaust groove 124 extending upward so as to penetrate the vacuum-forming member 121-1. A ring-shaped flow path 125-1 is formed in the vacuum forming member 121-2 with N1 pipes (four in the example shown in FIG. 3) pipes 125-21 communicating with the flow path 125-1 and a N1 pipe. The ring-shaped collecting flow path 125-22 in which the root pipes 125-21 are collected, and in the vacuum forming member 121-3, an N2 (where N2 <N1) root communicating with the collecting flow path 125-22 is formed (see FIG. 3). In the example shown, there are 2) pipes 125-31 and a ring-shaped collecting flow path 125-32 that collects N2 pipes 125-31. The pipe 125-4 communicates with the collecting flow path 125-32, and the pipe 125-4 is connected.于 vacuum pump 52. Furthermore, in the example shown in FIG. 3, the number N2 of piping 125-31 is half of the number N1 of piping 125-21, and one piping 125-31 is located approximately from two piping 125-21 communicating with it. Equal distance. In addition, the number N2 of piping 125-31 is half the number of piping 125-4 (one in the example shown in FIG. 3), and the piping 125-4 is located approximately from the two piping 125-31 communicating with it. Equal distance. Therefore, the length and pressure loss of the exhaust path through each of the pipes 125-21 are substantially equal, and the amount of air exhausted from the exhaust groove 124 does not vary depending on the orientation. However, the structure of the piping 125 is not limited to this example. The vacuum pump 52i exhausts the surrounding space of the beam passing space SPb3 via the exhaust groove 124. As a result, the differential exhaust system 12 can appropriately maintain the vacuum degree of the beam passage space SPb3. In addition, the exhaust groove 124 may not be formed in a single ring shape, or may be a plurality of exhaust grooves having a part of a plurality of rings.

Returning to FIG. 2, the vacuum pump 52 is mainly used to relatively increase the vacuum degree of the beam passing space SPb3 and to exhaust the local space around the beam passing space SPb3. Therefore, the vacuum pump 52 may also have an exhausting capability that can maintain a degree of vacuum lower than that maintained by the vacuum pump 51. That is, the exhaust capability of the vacuum pump 52 may be lower than the exhaust capability of the vacuum pump 51. For example, the vacuum pump 52 may be a vacuum pump that includes a dry pump (or another type of low vacuum pump) and does not include a turbo molecular pump (or another type of high vacuum pump). In this case, the vacuum degree of the space in the exhaust tank 124 and the piping 125 which are decompressed by the vacuum pump 52 may be lower than the vacuum degree of the beam passing space SPb1 to the beam passing space SPb3 which is decompressed by the vacuum pump 51. . In addition, the vacuum pump 52 may be an exhaust velocity [m ³ / s] to the extent that a vacuum degree lower than that maintained by the vacuum pump 51 can be maintained.

In this way, a local vacuum region VSP including the beam passage space SPb3 is formed. On the other hand, at least a portion of the surface WSu of the sample W that does not face the beam passage space SPb3 (particularly a portion remote from the beam passage space SPb3) is also included. It can be covered by a non-vacuum region having a lower vacuum than the vacuum region VSP. Typically, at least a part of the surface WSu of the sample W that does not face the beam space SPb3 may be in an atmospheric pressure environment. That is, at least a part of the surface WSu of the sample W that does not face the beam passing space SPb3 may be covered by the atmospheric pressure region. Specifically, the differential exhaust system 12 forms a vacuum region VSP in a space SP1 (see FIG. 2) including the beam passing space SPb3. The space SP1 includes, for example, a space that is in contact with at least one of the beam exit 1232 and the exhaust groove 124. The space SP1 includes a space of a portion of the surface WSu facing (that is, in contact with) the sample W immediately below at least one of the beam exit 1232 and the exhaust groove 124. On the other hand, in the space SP2 surrounding the space SP1 (that is, the space SP2 connected to the space SP1 (eg, fluidly connected) around the space SP1 (see FIG. 2), the vacuum region VSP is not formed. That is, the space SP2 becomes a space having a higher pressure than the space SP1. The space SP2 includes, for example, a space away from the beam exit 1232 and the exhaust groove 124. The space SP2 contains, for example, a space of a portion of the surface WSu facing the sample W that is different from the portion facing the space SP1. The space SP2 includes a space that cannot be connected to the beam exit 1232 and the exhaust groove 124 (and further, the beam passes through the space SPb2 and the piping 125) without passing through the space SP1. The space SP2 includes a space that can be connected to the beam emission outlet 1232 and the exhaust groove 124 (and further, the beam passes through the space SPb2 and the piping 125) through the space SP1. Since the pressure of the space SP2 is higher than the pressure of the space SP1, there is a possibility that gas flows from the space SP2 to the space SP1, but the gas flowing from the space SP2 to the space SP1 passes through the exhaust groove 124 (and further, the beam exit 1232). Discharge from space SP1. That is, the gas flowing from the space SP2 to the space SP1 is discharged from the space SP1 through the pipe 125 (and further, the beam passes through the space SPb2). Therefore, the degree of vacuum of the vacuum region VSP formed in the space SP1 is maintained. Therefore, a state where the vacuum region VSP is locally formed may also mean a state where the vacuum region VSP is locally formed on the surface WSu of the sample W (that is, locally formed in a direction along the surface WSu of the sample W There is a vacuum area VSP state).

In FIG. 1 again, the platform device 2 is disposed below the beam irradiation device 1 (ie, the -Z side). The platform device 2 includes a fixed plate 21 and a platform 22. The fixed plate 21 is arranged on a support surface SF such as the ground. The platform 22 is disposed on the fixed plate 21. An anti-vibration device (not shown) is provided between the platform 22 and the fixed plate 21 to prevent the vibration of the fixed plate 21 from being transmitted to the platform 22.

The stage 22 can hold the sample W. For example, the stage 22 may also hold the sample W by vacuum suction or electrostatic suction of the sample W. The stage 22 may release the held sample W. The stage 22 holds the sample W under the control of the control device 4. In this state, the stage W is movable along at least one of the X-axis direction, Y-axis direction, Z-axis direction, θX direction, θY direction, and θZ direction. In order to move the platform 22, the platform device 2 includes a platform driving system 23. The platform drive system 23 moves the platform 22 using an arbitrary motor (for example, a linear motor). The platform device 2 further includes a position measuring device 24 that measures the position of the platform 22. The position measuring device 24 includes, for example, at least one of an encoder and a laser interferometer. When the stage W holds the sample W, the control device 4 can determine the position of the sample W based on the position of the stage 22. The stage 22 may include a reference plate including a reference mark for associating the position of the electron beam EB obtained by the beam irradiation device 1 with the position of the stage 22 (the position in the XYZ direction).

When the stage 22 moves along the XY plane, the relative position of the sample W and the beam irradiation apparatus 1 in the direction along the XY plane changes. Therefore, when the stage 22 moves along the XY plane, the relative position of the irradiation area of the electron beam EB of the sample W and the surface WSu of the sample W in the direction along the XY plane changes. That is, if the stage 22 moves along the XY plane, the irradiation area of the electron beam EB is moved relative to the surface WSu of the sample W in the direction along the XY plane (that is, the direction along the surface WSu of the sample W). . Furthermore, when the stage 22 moves along the XY plane, the relative positions of the sample W and the beam passing space SPb3 and the vacuum region VSP in the direction along the XY plane change. That is, if the stage 22 moves along the XY plane, in a direction along the XY plane (that is, a direction along the surface WSu of the sample W), the beam passes through the space SPb3 and the vacuum region VSP with respect to the surface WSu of the sample W. While moving. The control device 4 may also control the stage driving system 23 to move the stage 22 along the XY plane to irradiate the electron beam EB at a desired position on the surface WSu of the sample W and set the beam passage space SPb3 (ie, form a vacuum region VSP). Specifically, for example, the control device 4 controls the stage driving system 23 to move the stage 22 along the XY plane, so that the first region of the surface WSu of the sample W forms a vacuum region VSP. After the stage 22 moves to form a vacuum region VSP on the first portion of the surface WSu of the sample W, the beam irradiation device 1 irradiates the first portion of the surface WSu of the sample W with the electron beam EB, and measures the state of the first portion. While the beam irradiation apparatus 1 irradiates the first portion of the surface WSu of the sample W with the electron beam EB, the stage driving system 23 may not move the stage 22 along the XY plane. After the measurement of the state of the first part is completed, the control device 4 controls the platform driving system 23 to move the platform 22 along the XY plane so that a vacuum region VSP is formed on the second part of the surface WSu of the sample W. After the stage 22 moves to form a vacuum region VSP on the second portion of the surface WSu of the sample W, the beam irradiation device 1 irradiates the second portion of the surface WSu of the sample W with an electron beam EB, and measures the state of the second portion. . The stage driving system 23 may not move the stage 22 along the XY plane while the beam irradiation apparatus 1 irradiates the second part of the surface WSu of the sample W with the electron beam EB. Thereafter, the state of the surface WSu of the test sample W is measured by repeating the same operation.

When the stage 22 moves along the Z axis, the relative position of the sample W and the beam irradiation apparatus 1 in the direction along the Z axis changes. Therefore, if the stage 22 moves along the Z axis, the relative position of the sample W and the focus position of the electron beam EB in the direction along the Z axis changes. The control device 4 may also control the platform driving system 23 to move the platform 22 along the Z axis, so as to set the focus position of the electron beam EB on the surface WSu of the sample W (or near the surface WSu). Here, the focus position of the electron beam EB may be a focal position corresponding to the imaging position of the beam optical system 11 or a position in the Z-axis direction where the blur of the electron beam EB is minimized.

Furthermore, when the stage 22 moves along the Z axis, the interval D between the sample W and the beam irradiation apparatus 1 changes. Therefore, the platform driving system 23 can also be coordinated with the interval adjustment system 14 to be described below under the control of the control device 4 and move the platform 22 such that the interval D becomes the required interval D_target. At this time, the control device 4 determines the actual measurement result based on the measurement result of the position measurement device 24 (and further, the measurement result of the position measurement device 15 of the position of the measurement beam irradiation device 1 (particularly the position of the vacuum forming member 121) described later). The interval D, and at least one of the platform driving system 23 and the interval adjustment system 14 is controlled such that the determined interval D becomes the required interval D_target. Therefore, the position measurement device 15 and the position measurement device 24 can also function as a detection device that detects the interval D. When the thickness (size) in the Z-axis direction of the sample W is known, the control device 4 may use the beam irradiation device 1 and a reference surface (such as a reference plate) instead of the actual interval D / or otherwise. Information on the distance in the Z-axis direction and the information on the thickness (size) in the Z-axis direction of the sample W so that the distance from the beam irradiation device 1 to the sample W becomes the target distance, Controls at least one of the platform drive system 23 and the interval adjustment system 14.

The support stand 3 supports the beam irradiation device 1. Specifically, the support frame 3 includes a support leg 31 and a support member 32. The support leg 31 is arranged on the support surface SF. An anti-vibration device (not shown) may be provided between the support leg 31 and the support surface SF to prevent or reduce the vibration of the support surface SF from being transmitted to the support leg 31. The support leg 31 is, for example, a member extending upward from the support surface SF. The support leg 31 supports the support member 32. The support member 32 is a ring-shaped plate member having an opening 321 formed at the center in a plan view. The outer surface of the self-beam irradiation device 1 is connected to the lower surface of the support member 32 via the gap adjustment system 14 (in the example shown in FIGS. 1 to 3, the side wall member 122 included in the differential exhaust system 12 is (Outer surface) The upper surface of the flange member 13 extending outward. At this time, the beam irradiation apparatus 1 is arranged so as to penetrate the opening 321. As a result, the support stand 3 can support the beam irradiation apparatus 1 so as to be suspended from the lower surface of the support member 32. However, as long as the support stand 3 can support the beam irradiation apparatus 1, the beam irradiation apparatus 1 may be supported by another support method different from the support method shown in FIG. 1. Furthermore, an anti-vibration device (not shown) may be provided between the support leg 31 and the support member 32 to prevent or reduce the vibration of the support surface SF from being transmitted to the support member 32.

The interval adjustment system 14 adjusts the interval D between the emission surface 121LS of the vacuum forming member 121 and the surface WSu of the sample W or the emission surface 121LS from the vacuum forming member 121 by moving the beam irradiation device 1 at least along the Z axis. The distance in the Z-axis direction to the surface WSu of the sample W. For example, the interval adjustment system 14 may also move the beam irradiation apparatus 1 in the Z-axis direction so that the interval D becomes the required interval D_target. As such an interval adjustment system 14, for example, at least one of the following drive systems can be used: a drive system that moves the beam irradiation device 1 using a driving force of a motor, and a force generated by a piezoelectric effect of a piezoelectric element. A drive system for moving the beam irradiation device 1, a drive system for moving the beam irradiation device 1 using a Coulomb force (for example, an electrostatic force generated between at least two electrodes), and a Lorentz force (for example, between a coil and a magnetic pole) The generated electromagnetic force) is a drive system that moves the beam irradiation device 1. However, when the interval D between the emission surface 121LS and the surface WSu can be directly fixed, instead of the interval adjustment system 14, an interval adjustment member such as a shim may be arranged on the support member 32 and the convex Between edge members 13. Furthermore, in this case, the gap adjustment member such as a shim may not be disposed between the support member 32 and the flange member 13. The beam irradiation device 1 may be movable in the XY direction.

The scanning electron microscope SEM includes a position measuring device 15 to measure the position in the Z direction of the beam irradiation device 1 that can be moved by the interval adjustment system 14 (in particular, the position in the Z direction of the vacuum forming member 121). The position measuring device 15 includes, for example, at least one of an encoder and a laser interferometer. In addition, the position measuring device 15 may measure a position in the XY direction, a posture in the θX direction, and a θY direction of the beam irradiation apparatus 1. In addition, a measurement device that measures the position in the XY direction or the posture in the θX direction and θY direction of the beam irradiation device 1 may be provided separately from the position measuring device 15.

The control device 4 controls the operation of the scanning electron microscope SEM. For example, the control device 4 controls the beam irradiation device 1 so that the electron beam EB is irradiated to the sample W. For example, the control device 4 controls the pump system 5 (especially the vacuum pump 51 and the vacuum pump 52) so that the beam passing space SPb1 to the beam passing space SPb3 are vacuum spaces. Furthermore, the vacuum degree of the beam passing space SPb1, the beam passing space SPb2, and the beam passing space SPb3 may be different at this time. For example, the control device 4 controls the stage driving system 23 so that the electron beam EB is irradiated to a desired position in the XY plane of the surface WSu of the sample W. For example, the control device 4 controls the interval adjustment system 14 so that the interval D between the emission surface 121LS of the vacuum forming member 121 and the surface WSu of the sample W becomes the required interval D_target. Furthermore, in order to control the operation of the scanning electron microscope SEM, the control device 4 may include, for example, at least one of a computing device such as a central processing unit (CPU) and a memory device such as a memory.

In this embodiment, in particular, the scanning electron microscope SEM further includes an application device 6 that can apply the force F1 to the beam irradiation device 1. Hereinafter, referring to FIG. 4, the applying device 6 for applying such a force F1 will be described in more detail. FIG. 4 is a cross-sectional view showing the force F1 applied by the application device 6.

As shown in FIG. 4, the applying device 6 is fixed to the support member 32. The applying device 6 can apply a force F1 to the beam irradiation device 1 in a state of being fixed to the supporting member 32. In the example shown in FIG. 1, the applying device 6 is fixed to the lower surface of the support member 32. In this case, the application device 6 can apply a force F1 to the flange member 13 located below the support member 32.

However, the arrangement position of the application device 6 shown in FIG. 1 is only an example. Therefore, the application device 6 may be arranged at any position where the force F1 can be applied to the beam irradiation device 1. For example, the applying device 6 may be disposed on the support surface SF such as the support leg 31 and the ground, a member fixed to the support surface SF, a support surface SC such as a ceiling surface (not shown) (see FIG. 9 described later), and fixed to the support surface SC. , Or any other component. In this case, the application device 6 may apply a force F1 to the beam irradiation device 1 in a state of being fixed to the support leg 31, the support surface SF, the support surface SC, or other members. The application device 6 may indirectly apply the force F1 to the beam irradiation device 1, or may apply the force F1 to the beam irradiation device 1 via an arbitrary member (for example, the support leg 31 or the support member 32).

The applying device 6 may be provided without using a power source provided in the self-scanning electron microscope SEM or provided outside the scanning electron microscope SEM (hereinafter, a power source provided in the scanning electron microscope SEM or prepared outside the scanning electron microscope SEM) In the case of power supplied from a power source (referred to simply as a "power source"), a force F1 is applied. That is, the applying device 6 may also apply the force F1 non-electrically. It should be noted that the non-electrical application of the force F1 may also mean the application of the force F1 without using power supplied from a power source. For example, the application device 6 may also provide a force F1 due to the elasticity of an elastic member (for example, a metal spring or a resin spring). In this case, the application device 6 includes, for example, an elastic member. The elastic member is arranged, for example, so that the support member 32 and the flange member 13 (or other parts of the beam irradiation apparatus 1, the same below) are connected. Alternatively, for example, the application device 6 may apply a force caused by the pressure of a fluid (such as a gas or a liquid) as the force F1. In this case, the applying device 6 includes a member (for example, an air spring) that can convert the pressure of the fluid into a force. A member capable of converting the pressure of the fluid into a force is arranged, for example, to connect the support member 32 and the flange member 13. Alternatively, for example, the applying device 6 may apply a magnetic force as the force F1. In this case, the imparting device 6 includes a permanent magnet that can generate magnetic force. The permanent magnet may be disposed on both the support member 32 and the flange member 13, for example. In this case, a magnetic force acting between the permanent magnet disposed on the support member 32 and the permanent magnet disposed on the flange member 13 is used as the force F1. Alternatively, for example, a permanent magnet may be disposed on any one of the support member 32 and the flange member 13, and a member attracted or repelled by a magnetic force may be disposed on any one of the support member 32 and the flange member 13 ( Such as ferromagnetics). In this case, a permanent magnet disposed on any one of the support member 32 and the flange member 13 and a member such as a ferromagnetic body disposed on any one of the support member 32 and the flange member 13 are used. Magnetic force is used as the force F1.

When the force F1 is applied to the device 6 non-electrically, the state of the device 6 may not be between the state where the force F1 is applied and the state where the force F1 is not provided (that is, the state where the force F1 is stopped). Electrical switching. Therefore, in the case where the force applying device F1 is applied non-electrically, the force applying device 6 can continue to apply force F1 while the force applying device F1 is placed in a state where the force applying force F1 can be placed on the scanning microscope SEM. In addition, as described later, the applying device 6 may also electrically apply the force F1.

The application device 6 applies a force acting to keep the beam irradiation device 1 away from the sample W as the force F1. Keeping the beam irradiation device 1 and the sample W away from and preventing (in other words, suppressing or preventing) the beam irradiation device 1 and the sample W are close to equivalent. Therefore, it can also be said that the application device 6 applies a force preventing the beam irradiation device 1 from approaching the sample W as the force F1. When a vacuum region VSP is formed between the beam irradiation device 1 and the sample W, a negative pressure caused by the vacuum region VSP acts on the sample W (especially the portion of the sample W facing the vacuum region VSP). . This negative pressure acts on the sample W as a force that brings the sample W into close proximity (ie, suction) with the beam irradiation apparatus 1. Therefore, assuming that the force F1 is smaller than the force of the negative pressure caused by the vacuum region VSP, there is a possibility that the imparting device 6 cannot keep the beam irradiation device 1 away from the sample W. Therefore, the force F1 applied by the application device 6 may be larger than the negative pressure caused by the vacuum region VSP.

The beam irradiating device 1 includes a beam optical system 11 and a differential exhaust system 12. Therefore, the beam irradiating device 1 is separated from the sample W and at least one of the beam optical system 11 and the differential exhaust system 12 is distant from the sample W. (Further, at least one of the beam prevention optical system 11 and the differential exhaust system 12 approaches the sample W.) Therefore, it can also be said that the imparting device 6 imparts a force to keep at least one of the beam optical system 11 and the differential exhaust system 12 away from the sample W (that is, at least one of the beam optical system 11 and the differential exhaust system 12 is prevented. The force close to the sample W) is taken as the force F1.

The beam irradiation device 1 and the sample W are arranged in a state where the emission surface 121LS of the beam irradiation device 1 and the surface WSu of the sample W face each other. Therefore, the distance between the beam irradiation device 1 and the sample W and the exit surface 121LS from the surface WSu (and further, the exit surface 121LS from approaching the surface WSu) are equivalent. Therefore, it can also be said that the applying device 6 applies a force that keeps the emission surface 121LS away from the surface WSu (that is, a force that prevents the emission surface 121LS from approaching the surface WSu) as the force F1.

Since the sample W is held by the stage 22, it is equivalent to keep the beam irradiation device 1 and the sample W away from the beam irradiation device 1 and the platform 22 (and further prevent the beam irradiation device 1 from approaching the platform 22). Therefore, it can also be said that the application device 6 applies a force (that is, a force to prevent the beam irradiation device 1 from approaching the stage 22) away from the beam irradiation device 1 and the stage 22 as the force F1.

In the example shown in FIG. 4, the beam irradiation device 1 is disposed above the sample W. That is, the sample W is arranged below the beam irradiation apparatus 1. In this case, the application device 6 applies a force acting to squeeze or stretch the beam irradiation device 1 upward as the force F1. In particular, in the example shown in FIG. 4, the applying device 6 applies a force F1 to the flange member 13 (in particular, the upper surface of the flange member 13) disposed below the applying device 6. In this case, the application device 6 applies a force acting to stretch or suck the flange member 13 upward from above the flange member 13 (that is, to stretch the beam irradiation device 1 upward. The force F1 is a force acting or a force acting to attract the beam irradiation device 1 upward. That is, the applying device 6 applies a force acting in a direction opposite to the direction of gravity as the force F1. Since the flange member 13 is connected to the differential exhaust system 12, the application of the force F1 to the flange member 13 and the application of the force F1 to the differential exhaust system 12 are equivalent. Therefore, it can be said that the applying device 6 applies a force acting to stretch the differential exhaust system 12 upward as the force F1. Furthermore, since the differential exhaust system 12 is connected to the beam optical system 11, the force F1 applied to the flange member 13 and the force F1 applied to the beam optical system 11 are equivalent. Therefore, it can also be said that the application device 6 applies a force acting to stretch the beam optical system 11 upward as the force F1. It should be noted that the force applied to the device 6 to move the beam optical system 11 may be referred to as the force F1. In addition, the force applied to the apparatus 6 such that the beam optical system 11 moves in a direction away from the sample W as the force F1 may be applied to the application device 6.

The interval adjustment system 14 adjusts the interval D such that the interval D between the beam irradiation device 1 and the sample W becomes the required interval D_target in a state where the application device 6 applies a force F1 to the beam irradiation device 1. Conversely, the application device 6 continues to apply the force F1 to the beam irradiation device 1 while the interval D is being adjusted by the interval adjustment system 14. Specifically, in the present embodiment, the application device 6 continues to apply the force F1 to the beam irradiation device 1 even when the interval D becomes the required interval D_target. For example, when the imparting device 6 includes an elastic member such as a spring, the characteristic of the elastic member is set so that the elastic member continues to apply the force F1 to the beam irradiation device 1 even when the interval D becomes the required interval D_target. (Such as at least one of a spring constant and a length). Therefore, in a state where the application device 6 applies a force F1 to the beam irradiation device 1, if the interval adjustment system 14 does not apply any force to the beam irradiation device 1, the beam irradiation device 1 moves upward. As a result, the interval D becomes larger than the required interval D_target. Therefore, in the present embodiment, the interval adjustment system 14 applies a force F2 acting in a direction opposite to the direction in which the force F1 acts to the beam irradiation device 1 during the period in which the application device 6 applies the force F1 to the beam irradiation device 1 ( For example, the flange member 13) adjusts the interval D on the one hand. In the example shown in FIG. 4, the interval adjustment system 14 applies a force acting in the direction of gravity as the force F2. That is, the interval adjustment system 14 applies a force acting to squeeze the flange member 13 downward from the flange member 13 (that is, a force acting to squeeze the beam irradiation device 1 downward) as a force. F2. In this case, for example, if a force F2 that is smaller than the magnitude of the force F1 is given to the force that combines the force F2 and the gravity acting on the beam irradiation device 1, the beam irradiation device 1 moves upward relative to the sample W. The interval D becomes larger. For example, if a force F2 is added that combines the force F2 and the gravity acting on the beam irradiation device 1 with a larger force than the force F1, the beam irradiation device 1 moves downward with respect to the sample W and the interval D becomes smaller. . For example, if a force F2 is applied that combines the force F2 and the force acting on the beam irradiation device 1 with the same force as the force F1, the beam irradiation device 1 remains stationary with respect to the sample W while maintaining the interval D. It should be noted that the interval adjustment system 14 may be referred to as a force F2 by a force acting to move the beam irradiation device 1 in a direction approaching the sample W.

If the interval D is adjusted in such a state that the application device 6 applies a force F1 to the beam irradiation device 1, when the interval adjustment system 14 generates an abnormality in which the interval D cannot be adjusted, the beam irradiation device 1 and the sample W can be appropriately prevented. Collision (ie contact). Hereinafter, the reason will be described with reference to FIG. 5. FIG. 5 is a cross-sectional view showing the positional relationship between the beam irradiation device 1 and the sample W in a state where the interval adjustment system 14 has an abnormality in which the interval D cannot be adjusted.

The interval adjustment system 14 usually operates using power supplied from a power source. That is, the interval adjustment system 14 usually adjusts (ie, controls) the interval D electrically. Therefore, if the power supply from the power source is stopped, the interval adjustment system 14 cannot adjust the interval D. Therefore, as an example of the abnormality generated by the interval adjustment system 14, the power supply for stopping the operation of the interval adjustment system 14 (or the control device 4 or another abnormality detection device that detects that the interval adjustment system 14 operates Power supply stopped) and other abnormalities. Alternatively, when the interval adjustment system 14 itself fails (for example, a component or a component constituting the interval adjustment system 14 fails), the interval adjustment system 14 cannot adjust the interval D even if the power supply for operating the interval adjustment system 14 is not stopped. . Therefore, as an example of the abnormality generated by the interval adjustment system 14, an abnormality such as the failure of the interval adjustment system 14 itself (or a failure of the interval adjustment system 14 detected by the control device 4 or other abnormality detection device) can be cited. In addition, as an example of the abnormality generated by the interval adjustment system 14, an abnormality such as an error in a control signal transmitted from the control device 4 to the interval adjustment system 14 may be mentioned. Alternatively, as an example of the abnormality generated by the interval adjustment system 14, an abnormality such as an actuator in the interval adjustment system 14 is not operating, such as a control signal transmitted from the control device 4 to the interval adjustment system 14. In addition, the interval D may not be adjusted due to an influence of a force external to the interval adjustment system 14 due to an earthquake or the like. Therefore, as an example of the abnormality generated by the interval adjustment system 14, an abnormality such as the application of a force from the outside to the interval adjustment system 14 may be mentioned.

If the interval adjustment system 14 generates an abnormality in which the interval D cannot be adjusted, the interval adjustment system 14 cannot apply the force F2 to the beam irradiation apparatus 1 to adjust the interval D. If it is assumed here that the application device 6 does not apply the force F1, after the interval adjustment system 14 cannot provide the force F2, the beam irradiation device 1 gradually falls downward (that is, gradually moves) due to gravity. That is, the beam irradiation apparatus 1 falls down due to the weight of the beam irradiation apparatus 1 so as to approach the sample W. As a result, there is a possibility that the beam irradiation device 1 collides with the sample W (for example, the emission surface 121LS of the beam irradiation device 1 collides with the surface WSu of the sample W). However, in the present embodiment, the applying device 6 applies a force F1. In particular, the applying device 6 continuously applies the force F1 while the interval D is being adjusted by the interval adjusting system 14. Therefore, even after the interval adjustment system 14 cannot apply the force F2, the beam irradiating device 1 is provided with the force F1 that acts to keep the beam irradiating device 1 away from the sample W. Therefore, if the force F2 cannot be applied by the interval adjustment system 14, the beam irradiation device 1 moves upward due to the force F1 as shown in FIG. 5. That is, the beam irradiation apparatus 1 moves away from the sample W. In other words, the position of the beam irradiation apparatus 1 is changed so that the beam irradiation apparatus 1 is away from the sample W. As a result, although the interval D is larger than the required interval D_target, the possibility of the beam irradiation device 1 colliding with the sample W (for example, the exit surface 121LS of the beam irradiation device 1 colliding with the surface WSu of the sample W) is relatively small. That is, even when an abnormality occurs in the interval adjustment system 14, the collision of the beam irradiation device 1 and the sample W is appropriately prevented.

In this way, if it is considered that the force F1 applied by the application device 6 prevents the beam irradiation device 1 from colliding with the sample W, the force F1 is a force that can prevent the beam irradiation device 1 from colliding with the sample W.

In addition, not only when the interval adjustment system 14 has an abnormality in which the interval D cannot be adjusted (that is, an abnormality in which the force F2 cannot be imparted), but also when the interval adjustment system 14 can impart a force F2, it is possible. In a case where the beam irradiation device 1 and the sample W collide with each other abnormally, if the force F1 is applied, the collision of the beam irradiation device 1 and the sample W is appropriately prevented. Hereinafter, an example of an abnormality that may cause the beam irradiation device 1 to collide with the sample W will be described.

For example, if an abnormality occurs in the platform driving system 23 that moves the platform 22, there is a possibility that the platform driving system 23 cannot move the platform 22. That is, there is a possibility that the relative position of the stage 22 with respect to the beam irradiation apparatus 1 is not properly controlled. In other words, there is a possibility that the platform 22 is not located at a desired position. As a result, the stage 22 may be moved to an unexpected position, and the sample W held by the stage 22 may collide with the beam irradiation apparatus 1. Therefore, as an example of an abnormality that may cause the beam irradiation device 1 to collide with the sample W, an abnormality generated by the platform driving system 23 may be mentioned. The platform driving system 23 generally operates using electric power supplied from a power source. Therefore, if the power supply from the power source is stopped, the platform driving system 23 cannot move the platform 22. Therefore, as an example of the abnormality generated by the platform driving system 23, the power supply for stopping the operation of the platform driving system 23 (or the control device 4 or another abnormality detecting device that detects that the platform driving system 23 is operating can be cited). Power supply stopped) and other abnormalities. Alternatively, in the case where the platform driving system 23 itself fails (for example, a component or a part constituting the platform driving system 23 fails), the platform driving system 23 cannot make the platform fail even if the power supply for operating the platform driving system 23 is not stopped. 22 to move. Therefore, as an example of the abnormality generated by the platform driving system 23, abnormalities such as a failure of the platform driving system 23 itself (or a failure of the platform driving system 23 detected by the control device 4 or other abnormality detection device) can be cited. In addition, as an example of the abnormality generated by the platform driving system 23, an abnormality such as an error of a control signal transmitted from the control device 4 to the platform driving system 23 can be cited. Alternatively, as an example of the abnormality generated by the platform driving system 23, an abnormality such as an actuator in the platform driving system 23 not operating, such as a control signal transmitted from the control device 4 to the platform driving system 23, may be mentioned. In addition, there is a possibility that the interval D cannot be adjusted due to an influence of a force from outside the platform drive system 23 due to an earthquake or the like. Therefore, as an example of the abnormality generated by the platform driving system 23, an abnormality such as an external force applied to the platform driving system 23 can be cited.

For example, when the interval D is adjusted by the interval adjustment system 14 as described above, the control device 4 determines the actual interval D based on the detection results of the position detection device 15 and the position detection device 24, and controls based on the determined interval D Interval adjustment system 14. Therefore, when an abnormality occurs in at least one of the position detection device 15 and the position detection device 24, the control device 4 cannot determine the actual interval D. When the control device 4 cannot determine the actual interval D, there is a possibility that the interval adjustment system 14 cannot properly adjust the interval D. For example, even if the interval adjustment system 14 adjusts the interval D, there is a possibility that the interval D does not become the required interval D_target. As a result, the interval D may be an unexpected interval, and the beam irradiation apparatus 1 may collide with the sample W. Similarly, when the platform driving system 23 moves the platform 22 along the XY plane, the control device 4 determines the position of the platform 22 based on the detection result of the position detection device 24 and controls the platform driving system 23 based on the determined position. Therefore, when an abnormality occurs in the position detecting device 24, the control device 4 cannot determine the position of the platform 22. When the control device 4 cannot determine the position of the platform 22, there is a possibility that the platform driving system 23 cannot properly move the platform 22. For example, even if the platform driving system 23 moves the platform 22, the platform 22 may not be located at a desired position. As a result, the stage 22 may be moved to an unexpected position, and the sample W held by the stage 22 may collide with the beam irradiation apparatus 1. Therefore, as an example of an abnormality that may cause the beam irradiation device 1 to collide with the sample W, an abnormality generated by at least one of the position detection device 15 and the position detection device 24 may be mentioned.

As an example of such an abnormality generated by the position detection device 15, an abnormality in the position of the beam irradiation device 1 (particularly, the position of the vacuum forming member 121) cannot be detected by the position detection device 15. As an example of the abnormality generated by the position detection device 24, the position detection device 24 cannot detect an abnormality in the position of the platform 22. At least one of the position detection device 15 and the position detection device 24 generally operates using power supplied from a power source. Therefore, if the power supply from the power source is stopped, the position detection device 15 cannot detect the position of the beam irradiation device 1 and / or the position detection device 24 cannot detect the position of the platform 22. Therefore, as an example of the abnormality generated by the position detection device 15, the power supply for stopping the operation of the position detection device 15 (or the control device 4 or another abnormality detection device that detects that the position detection device 15 is operated can be cited. Power supply stopped) and other abnormalities. As an example of the abnormality generated by the position detection device 24, the power supply to stop the position detection device 24 (or the control device 4 or other abnormality detection device to detect the power supply to operate the position detection device 24) Stop) and so on. As an example of an abnormality generated by at least one of the position detection device 15 and the position detection device 24, a failure to output the detection result of at least one of the position detection device 15 and the position detection device 24 to the control device 4 (ie, position detection The detection result of at least one of the device 15 and the position detection device 24 is interrupted). As an example of an abnormality generated by at least one of the position detection device 15 and the position detection device 24, the control device 4 or other abnormality detection device may detect that at least one of the position detection device 15 and the position detection device 24 cannot be detected. The result is output to the control device 4 and other abnormalities. In addition, as an example of an abnormality that occurs in at least one of the position detection device 15 and the position detection device 24, a signal related to the detection result of at least one of the position detection device 15 and the position detection device 24 may be used to reach the control device 4. Anomalies such as changes in the middle.

For example, the smaller the actual interval D, the higher the possibility that the beam irradiation device 1 collides with the sample W. Therefore, as an example of an abnormality that may cause the beam irradiation device 1 to collide with the sample W, there is an abnormality such that the actual interval D is smaller than the predetermined first lower limit value D_min that is allowable as the interval D. In addition, a predetermined first lower limit value D_min that is allowable as the interval D may be referred to as a predetermined first lower limit value D_min.

When the interval adjustment system 14 adjusts the interval D, the control device 4 may determine the actual interval D and the required interval D_target (that is, the interval adjustment system) that can be determined based on the detection results of the position detection device 15 and the position detection device 24, for example. The driving target of 14) controls the interval adjustment system 14 in a consistent manner. Therefore, when the degree of deviation between the actual interval D and the required interval D_target exceeds an allowable predetermined first upper limit value, there is a possibility that the interval adjustment system 14 cannot properly adjust the interval D. As a result, the possibility that the beam irradiation apparatus 1 collides with the sample W is relatively high. Therefore, as an example of an abnormality that may cause the beam irradiation device 1 to collide with the sample W, an abnormality such as the degree of deviation between the actual interval D and the required interval D_target exceeds an allowable predetermined first upper limit value. Furthermore, the allowable predetermined first upper limit value may be referred to as a predetermined first upper limit value.

When the platform driving system 23 moves the platform 22, the control device 4 may determine the actual position of the platform 22 and the target position of the platform 22 (i.e., the platform driving system 23 may be determined based on the detection result of the position detection device 24). Drive the target) in a consistent manner to control the platform drive system 23. Therefore, when the degree of deviation between the actual position and the target position of the platform 22 exceeds the allowable predetermined second upper limit value, there is a possibility that the platform drive system 23 cannot properly move the platform 22. As a result, the possibility that the beam irradiation apparatus 1 collides with the sample W is relatively high. Therefore, as an example of an abnormality that may cause the beam irradiation device 1 to collide with the sample W, an abnormality such as a degree of deviation between the actual position of the stage 22 and the target position exceeding an allowable predetermined second upper limit value may be mentioned. Furthermore, the allowable predetermined second upper limit value may be referred to as a predetermined second upper limit value.

The above-mentioned abnormality that may cause the beam irradiation device 1 to collide with the sample W (except for the abnormality generated by the interval adjustment system 14) is that an appropriate force F2 is given to the interval adjustment system 14 (that is, the interval adjustment system 14 does not generate Anomalies). In this case, if the interval adjustment system 14 stops the application of the force F2, the beam irradiation device 1 moves away from the sample W due to the force F1 provided by the application device 6. As a result, the possibility that the beam irradiation apparatus 1 collides with the sample W becomes small. Therefore, the interval adjustment system 14 may stop the application of the force F2 when the interval adjustment system 14 is applying an appropriate force F2 at the time when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W. Specifically, the control device 4 monitors whether an abnormality that may cause the beam irradiation device 1 to collide with the sample W is generated. For example, the control device 4 monitors at least one of the state of the interval adjustment system 14, the state of the position detection device 15, the state of the platform drive system 23, and the state of the position detection device 24 to monitor whether or not a beam irradiation device is generated 1 Abnormal collision with sample W. As a result, the control device 4 may control the interval adjustment system 14 so as to apply the stopping force F2 when an abnormality occurs. However, at the time when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W, when the interval adjustment system 14 is applying an appropriate force F2, the interval adjustment system 14 may maintain the original state and continuously apply the force. F2. That is, when this situation is facilitated, as long as the force F1 is applied to the application device 6, the possibility that the beam irradiation device 1 moves due to the weight of the beam irradiation device 1 in a manner close to the sample W is relatively small.

In addition, in the above description, the applying device 6 applies a force F1 to the flange member 13. The applying device 6 applies a force F1 to the beam irradiation device 1 via the flange member 13. That is, the application device 6 applies a force F1 to the beam irradiation device 1 and moves the beam irradiation device 1 away from the sample W. However, the application device 6 may also apply a force F1 to any part of the beam irradiation device 1. For example, the application device 6 may apply the force F1 to the beam irradiation device 1 without passing through the flange member 13. For example, the application device 6 may apply a force F1 to any member connected to the beam irradiation device 1.

In the above description, the applying device 6 applies a force F1 to both the beam optical system 11 and the differential exhaust system 12. The applying device 6 applies a force F1 to both the beam optical system 11 and the differential exhaust system 12 to keep both the beam optical system 11 and the differential exhaust system 12 away from the sample W. However, the applying device 6 may apply a force F1 to any one of the beam optical system 11 and the differential exhaust system 12, and may not apply a force F1 to any one of the beam optical system 11 and the differential exhaust system 12. . For example, the applying device 6 may apply a force F1 to the beam optical system 11 and keep both the beam optical system 11 and the differential exhaust system 12 away from the sample W. For example, the applying device 6 may apply a force F1 to the differential exhaust system 12 to keep both the beam optical system 11 and the differential exhaust system 12 away from the sample W. For example, the application device 6 may apply a force F1 to any one of the beam optical system 11 and the differential exhaust system 12 to keep any one of the beam optical system 11 and the differential exhaust system 12 away from the sample W, and On the one hand, the force F1 is not applied to any one of the beam optical system 11 and the differential exhaust system 12, and neither of the other of the beam optical system 11 and the differential exhaust system 12 is kept away from the sample W. The force F1 is applied to the differential exhaust system 12 to keep the differential exhaust system 12 away from the sample W. On the other hand, the force F1 is not applied to the beam optical system 11 and the beam optical system 11 and the sample W are not applied. An example of the remote scanning electron microscope is described in a sixth modified example described later.

In addition, in the above-mentioned embodiment, the applying device 6 is directed in the same direction as the moving direction of the beam optical system 11 and the differential exhaust system 12, in other words, along the same axis as that of the beam optical system 11 and the differential exhaust system 12. Axis to power F1. Therefore, compared with the case where the force F1 is applied in a direction different from the moving direction of the beam optical system 11 and the differential exhaust system 12, the positioning in the moving direction of the beam optical system 11 and the differential exhaust system 12 can be improved. Advantages of precision.

(3) Modification Example Next, a modification example of the scanning electron microscope SEM will be described.

(3-1) First Modification First, a scanning electron microscope SEMa of a first modification will be described with reference to FIGS. 6 to 8. 6 is a cross-sectional view showing a configuration of a scanning electron microscope SEMa of a first modification. FIG. 7 is a cross-sectional view showing the force F1 applied by the application device 6 in the first modification. FIG. 8 is a cross-sectional view showing the positional relationship between the beam irradiation device 1 and the sample W in a situation where the interval adjustment system 14 has an abnormality in which the interval D cannot be adjusted in the first modification. In addition, the same constituent elements as those included in the scanning electron microscope SEM described above are denoted by the same reference numerals, and detailed description thereof will be omitted. Subsequent to the second modification described later, the same reference numerals are given to the same constituent elements as those already described, and detailed descriptions thereof are omitted.

As shown in FIG. 6, the scanning electron microscope SEMa differs from the scanning electron microscope SEM in that the vertical relationship between the support member 32 and the flange member 13 is reversed. Specifically, the scanning electron microscope SEMa differs from the scanning electron microscope SEM in which the flange member 13 is disposed above the support member 32 and the flange member 13 is disposed below the support member 32. In other words, the scanning electron microscope SEMa is different from the scanning electron microscope SEM in which the supporting member 32 is closer to the sample W than the flange member 13 and the flange member 13 is disposed below the supporting member 32. Furthermore, the scanning electron microscope SEMa is different from the scanning electron microscope SEM described above in which the applying device 6 is fixed to the lower surface of the support member 32. Furthermore, the scanning electron microscope SEMa is connected to the upper surface of the support member 32 via the gap adjustment system 14 and the lower surface of the flange member 13 is connected to the lower surface of the support member 32 via the gap adjustment system 14 to be convex. The above-mentioned scanning electron microscope SEM of the upper surface of the edge member 13 is different. The other structure of the scanning electron microscope SEMa may be the same as that of the scanning electron microscope SEM.

In the first modification, the application device 6 applies a force F1a to the beam irradiation device 1 instead of the aforementioned force F1. Specifically, as shown in FIG. 7, the applying device 6 applies a force F1 a to the flange member 13 (in particular, the lower surface of the flange member 13) disposed above the applying device 6. That is, the applying device 6 applies a force acting to squeeze the flange member 13 upward from below the flange member 13 (that is, a force acting to squeeze the beam irradiation device 1 upward) as the force F1a. . The other characteristics of the force F1a may be the same as the other characteristics of the force F1.

In the first modification, the interval adjustment system 14 applies a force F2a to the beam irradiation device 1 instead of the aforementioned force F2. Specifically, as shown in FIG. 7, the interval adjustment system 14 applies a force F2 a to the flange member 13 (in particular, the lower surface of the flange member 13) disposed above the interval adjustment system 14. That is, the interval adjustment system 14 imparts a force acting to stretch or suck the flange member 13 downward from the flange member 13 (that is, a force acting to stretch the beam irradiation device 1 downward. A force (or a force acting to attract the beam irradiation device 1 downward) is used as the force F2a. The other characteristics of the force F2a may be the same as the other characteristics of the force F2.

In the scanning electron microscope SEMa of the first modification, when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W, as shown in FIG. 8, the beam irradiation device 1 is affected by the force F1a. Move up. Therefore, collision of the beam irradiation device 1 with the sample W is appropriately prevented. That is, the scanning electron microscope SEMa of the first modification can enjoy the same effects as those described above for the scanning electron microscope SEM. In addition, in the first modification, since the support member 32 is disposed below the flange member 13, the support member 32 can function as a stopper that restricts the beam irradiation device 1 from falling downward. Specifically, when the flange member 13 is in contact with the support member 32 in a state where the beam irradiation device 1 is falling downward, the fall of the beam irradiation device 1 is restricted by the support member 32. Therefore, if the adjustment is performed so that the flange member 13 and the support member 32 are in contact with each other before the beam irradiation device 1 hits the sample W, the collision of the beam irradiation device 1 and the sample W is more appropriately prevented. For example, if the distance between the flange member 13 and the support member 32 is adjusted to be smaller than the interval D, the flange member 13 contacts the support member 32 before the beam irradiation device 1 hits the sample W, so that the beam irradiation is more appropriately prevented Collision between the device 1 and the sample W.

(3-2) Second Modified Example Next, a scanning electron microscope SEMb of the second modified example will be described with reference to FIGS. 9 to 11. 9 is a cross-sectional view showing a configuration of a scanning electron microscope SEMb according to a second modification. FIG. 10 is a cross-sectional view showing the force F1b applied by the application device 6 in the second modification. 11 is a cross-sectional view showing the positional relationship between the beam irradiation device 1 and the sample W in a situation where the interval adjustment system 14 has caused an abnormality in which the interval D cannot be adjusted in the second modification.

As shown in FIG. 9, the scanning electron microscope SEMb is different from the aforementioned scanning electron microscope SEM in that the stage device 2 is disposed above the beam irradiation device 1. In this case, the beam irradiation device 1 is arranged so that the electron beam EB is emitted upward from the beam irradiation device 1. That is, the beam irradiation apparatus 1 is provided with the differential exhaust system 12 above the beam optical system 11 and is arranged so that the emission surface 121LS faces upward. Furthermore, the stage device 2 is arranged so that the sample W can be held in a state where the surface WSu is facing downward. Specifically, the fixed plate 21 is arranged on a support surface SC such as a ceiling. Alternatively, the fixed plate 21 may be supported by a support member extending from a support surface SF such as a floor or a support surface SC such as a ceiling. The platform 22 is arranged below the fixed plate 21. The stage 22 is on the lower side of the stage 22 and holds the sample W in a state where the surface WSu is directed downward. The other structure of the scanning electron microscope SEMb may be the same as that of the scanning electron microscope SEM.

In the second modification, the application device 6 applies a force F1b to the beam irradiation device 1 instead of the aforementioned force F1. Specifically, as shown in FIG. 10, the imparting device 6 imparts a force acting to squeeze the flange member 13 downward from the flange member 13 (that is, to push the beam irradiation device 1 downward Mode acting force) as the force F1b. The applying device 6 applies a force acting in the direction of gravity as the force F1b. The other characteristics of the force F1b may be the same as the other characteristics of the force F1.

In the second modification, the interval adjustment system 14 applies a force F2b to the beam irradiation device 1 instead of the aforementioned force F2. Specifically, as shown in FIG. 10, the interval adjustment system 14 applies a force acting to stretch or suck the flange member 13 upward from the flange member 13 (that is, to irradiate the device 1 with the beam 1). A force acting to stretch upward or a force acting to attract the beam irradiation device 1 upward is used as the force F2b. The interval adjustment system 14 applies a force acting in a direction opposite to the direction of gravity as the force F2b. The other characteristics of the force F2a may be the same as the other characteristics of the force F2.

In the scanning electron microscope SEMb of this second modification, when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W, as shown in FIG. 11, the beam irradiation device 1 is affected by the force F1b. Move down. Therefore, collision of the beam irradiation device 1 with the sample W is appropriately prevented. That is, the scanning electron microscope SEMb of the second modification can enjoy the same effects as those described above for the scanning electron microscope SEM.

In the scanning electron microscope SEMb of the second modification, similarly to the scanning electron microscope SEMa of the first modification, the support member 32 is closer to the sample W than the flange member 13. Therefore, the support member 32 can function as a stopper that restricts the beam irradiation device 1 from moving upward. Therefore, collision of the beam irradiation device 1 with the sample W is more appropriately prevented. However, in the second modification, the flange member 13 may be closer to the sample W than the support member 32.

It should be noted that the force F1b provided by the application device 6 in the second modification is a force acting in the direction of gravity. Therefore, the gravity acting on the beam irradiation device 1 is equivalent to a force acting to move the beam irradiation device 1 away from the sample W. In this case, in the second modification, the scanning electron microscope SEMb may be used in addition to or instead of the force F1b provided by the device 6, and the gravity acting on the beam irradiation device 1 may be used to keep the beam irradiation device 1 away from the sample W. Of force. In addition, when the scanning electron microscope SEMb uses gravity acting on the beam irradiation device 1 instead of the force F1b provided by the application device 6 as a force to keep the beam irradiation device 1 away from the sample W, the scanning electron microscope SEMb The application device 6 may not be provided.

(3-3) Third Modification Next, a scanning electron microscope SEMc of the third modification will be described with reference to FIGS. 12 to 13. FIG. 12 is a cross-sectional view showing a configuration of a scanning electron microscope SEMc according to a third modification. FIG. 13 is a cross-sectional view showing a force F1c applied by the application device 6c in a third modification.

As shown in FIG. 12, compared with the scanning electron microscope SEM described above, the scanning electron microscope SEMc is provided with an application device 6c that applies a force F1c to the stage 22 instead of the application device 6 that applies a force F1 to the beam irradiation device 1. Different. The other structure of the scanning electron microscope SEMc may be the same as that of the scanning electron microscope SEM.

The application device 6c is fixed to a support member 33c connected to the support leg 31. The applying device 6c can apply a force F1c to the platform 22 in a state of being fixed to the support member 33c. In the example shown in FIG. 12, the application device 6 c is fixed to the lower surface of the support member 33 c which is disposed above the platform 22. In this case, the application device 6c can apply a force F1c to the platform 22 located below the support member 33c. However, the arrangement position of the application device 6c shown in FIG. 12 is only an example. Therefore, the application device 6c may be disposed at an arbitrary position where the force F1c can be applied to the platform 22. For example, the applying device 6c may be disposed on the support surface SF such as the fixed plate 21, the support leg 31, and the ground, a member fixed to the support surface SF, a support surface SC such as a ceiling surface (not shown), a member fixed to the support surface SC, Or any other component. The applying device 6c, like the applying device 6, applies a force F1c without using power supplied from a power source. The other features of the imparting device 6c may be the same as the other features of the imparting device 6.

The applying device 6c applies a force acting to keep the beam irradiation device 1 away from the sample W as the force F1c, similarly to the applying device 6. In the examples shown in FIGS. 12 and 13, the sample W is disposed below the beam irradiation apparatus 1. In this case, the applying device 6c applies a force acting to squeeze or stretch the platform 22 downward as the force F1c. In particular, in the examples shown in FIGS. 12 and 13, the application device 6 c applies a force F1 c to the platform 22 disposed below the application device 6 c. In this case, as shown in FIG. 13, the applying device 6 c applies a force acting as a force F1 c that acts to squeeze the platform 22 downward from above the platform 22. That is, the applying device 6c applies a force acting in the direction of gravity as the force F1c. In this case, the scanning electron microscope SEMc may be the same as the scanning microscope SEMb of the second modification, in addition to or instead of the force F1c provided by the device 6c, the gravity acting on the stage 22 and the sample W may be applied. The gravitational force is used as a force to keep the beam irradiation device 1 away from the sample W. The other features of the force F1c may be the same as the other features of the force F1.

In the third modification, the platform driving system 23 moves the platform 22 in a state where the application device 6 c applies a force F1 c to the platform 22. Conversely, the imparting device 6c continuously applies a force F1c to the platform 22 while the platform driving system 23 moves the platform 22. Specifically, in the present embodiment, even if the application device 6c moves to the desired position and the interval D becomes the required interval D_target, the force F1c is continuously applied to the platform 22. For example, when the imparting device 6c includes an elastic member such as a spring, the characteristic of the elastic member is set such that the elastic member continues to apply the force F1c to the platform 22 even when the interval D becomes the required interval D_target (for example, , At least one of spring constant and length). Therefore, if the application device 6c applies force F1c to the platform 22, the platform drive system 23 does not apply any force acting on the platform 22 in the Z-axis direction, the platform 22 moves downward and the interval D deviates from the required interval D_target. Possibility. The reason is that, as described above, an anti-vibration device (not shown) is arranged between the platform 22 and the fixed plate 21, so the possibility of the platform 22 moving downward is not zero. Therefore, in the third modification, the platform driving system 23 applies a force F3c acting in a direction opposite to the direction in which the force F1c acts to the platform 22 while the force is applied to the platform 22 by the application device 6c. The aspect moves the platform 22. In the examples shown in FIGS. 12 and 13, the platform driving system 23 applies a force acting in a direction opposite to the direction of gravity as the force F3c. That is, the platform drive system 23 applies a force acting to squeeze or stretch the platform 22 upward as the force F3c. In this case, for example, if a force F3c, which is a force that combines the force F1c with the gravity acting on the platform 22 and the sample W, is larger than the force F3c, there is a sample W with respect to the beam irradiation device 1 There is a possibility that the interval D becomes larger by moving downward. For example, if a force F3c that combines the force F1c with the gravity acting on the stage 22 and the specimen W is smaller than the magnitude of the force F3c, the specimen W moves upward with respect to the beam irradiation apparatus 1 with an interval D. Get smaller. For example, if a force F3c is obtained which has the same force F3c as the force combined with the gravity acting on the stage 22 and the sample W as the magnitude of the force F3c, the sample W remains stationary with respect to the beam irradiation apparatus 1 while maintaining the interval D. In addition, other features of the force F3c may be the same as the other features of the force F2.

On the other hand, in the third modification, the interval adjustment system 14 may adjust the interval D without using the aforementioned force F2. In this case, the interval adjustment system 14 may adjust the interval D by using a force acting to stretch the beam irradiation device 1 upward. However, the interval adjustment system 14 may also adjust the interval D by using a force (that is, the aforementioned force F2) that acts to squeeze the beam irradiation device 1 downward.

If the application device 6c applies the force F1c to the stage 22 in this way, the collision between the beam irradiation device 1 and the sample W can be appropriately prevented when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W. Specifically, even after an abnormality that may cause the beam irradiation device 1 to collide with the sample W is generated, a force F1c is applied to the stage 22 so as to keep the beam irradiation device 1 and the sample W away. Therefore, even if an abnormality may occur that causes the beam irradiation device 1 to collide with the sample W, the possibility that the stage 22 moves upward (that is, the sample W moves upward) is relatively small. Therefore, compared with the case where the force F1c is not imparted, the possibility that the beam irradiation device 1 collides with the sample W is relatively small. Therefore, collision of the beam irradiation device 1 with the sample W is appropriately prevented. That is, the scanning electron microscope SEMc of the third modification example can enjoy the same effects as those described above for the scanning electron microscope SEM.

In addition, in the above description, the applying device 6 c applies a force F1 c to the stage 22 holding the sample W. However, the purpose of applying the force F1c to the stage 22 is to prevent the sample W held by the stage 22 from colliding with the beam irradiation apparatus 1. In this case, the force applying device 6c may apply a force F1c to the sample W in addition to or instead of the stage 22. In this case, collision of the sample W with the beam irradiation apparatus 1 is also prevented. The force F1c applied to the stage 22 holding the sample W and the force F1c indirectly applied to the sample W are substantially equivalent.

In addition, the scanning electron microscope SEMc may include a device 6c for applying a force F1 to the beam irradiation device 1 in addition to the device 6c for applying a force F1c to the stage 22. In this case, collision of the sample W with the beam irradiation apparatus 1 is more appropriately prevented.

(3-4) Fourth Modification Next, a scanning electron microscope SEMd of a fourth modification will be described with reference to FIGS. 14 to 16. 14 is a cross-sectional view showing a configuration of a scanning electron microscope SEMd according to a fourth modification. FIG. 15 is a cross-sectional view showing a force F1d applied by the application device 6c in a fourth modification. FIG. 16 is a cross-sectional view showing the positional relationship between the beam irradiation device 1 and the sample W in a situation where the interval adjustment system 14 has an abnormality in which the interval D cannot be adjusted in the fourth modification.

As shown in FIG. 14, the scanning electron microscope SEMd is different from the scanning electron microscope SEMc of the third modified example in that the stage device 2 is disposed above the beam irradiation device 1. That is, in the scanning electron microscope SEMd, similarly to the scanning electron microscope SEMb of the second modification example, the stage device 2 is disposed above the beam irradiation device 1. In this case, as in the second modification, the beam irradiation device 1 is arranged so that the electron beam EB is emitted upward from the beam irradiation device 1, and the stage device 2 can hold the sample W with the surface WSu facing downward. Way to configure. The other structures of the scanning electron microscope SEMd may be the same as those of the scanning electron microscope SEMb of the second modification and the scanning electron microscope SEMc of the third modification.

In the fourth modification, the application device 6c applies a force F1d to the platform 22 instead of the aforementioned force F1c. Specifically, as shown in FIG. 15, the application device 6 c applies a force acting as a force F1 d that acts to squeeze or stretch the platform 22 upward from below the platform 22. The applying device 6c applies a force acting in a direction opposite to the direction of gravity as the force F1d. The other characteristics of the force F1d may be the same as the other characteristics of the force F1c.

In the fourth modification, the platform drive system 23 applies a force F3d to the platform 22 instead of the aforementioned force F3c. Specifically, as shown in FIG. 15, the platform driving system 23 applies a force acting as a force F3d to the platform 22 to squeeze downward. The platform driving system 23 applies a force acting in the direction of gravity as a force F3d. The other characteristics of the force F3d may be the same as the other characteristics of the force F3c.

In such a scanning electron microscope SEMd of the fourth modification, when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W, as shown in FIG. 16, the stage 22 is moved upward by the force F1d. mobile. Therefore, collision of the beam irradiation device 1 with the sample W is appropriately prevented. That is, the scanning electron microscope SEMd of the fourth modification can enjoy the same effects as those of the scanning electron microscope SEMc of the third modification described above.

(3-5) Fifth Modification Example Next, a scanning electron microscope SEMe of a fifth modification example will be described with reference to FIG. 17. 17 is a cross-sectional view showing a configuration of a scanning electron microscope SEMe of a fifth modification.

As shown in FIG. 17, the scanning electron microscope SEMe is different from the scanning electron microscope SEM described above in that it may or may not be provided with the device 6. The other structure of the scanning electron microscope SEMe may be the same as that of the scanning electron microscope SEM.

The applying device 6 is a device for applying a force F1 to the beam irradiation device 1. On the other hand, the interval adjustment system 14 can also apply a force to the beam irradiation device 1 (for example, a force to adjust the interval D). Therefore, in the fifth modification, the scanning electron microscope SEMe is used in place of (or in addition to) the application device 6 and the interval adjustment system 14 is used to apply the aforementioned force F1 to the beam irradiation device 1. Specifically, in the fifth modification, when there is no abnormality that may cause the beam irradiation device 1 to collide with the sample W, the interval adjustment system 14 adjusts the interval D so that the interval D becomes the required interval D_target. On the other hand, when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W, the interval adjustment system 14 applies a force F1 to the beam irradiation device 1 to keep the beam irradiation device 1 and the sample W away. As a result, similarly to the scanning electron microscope SEM described above, the scanning electron microscope SEMe that does not include the application device 6 appropriately prevents the beam irradiation device 1 from colliding with the sample W. That is, the scanning electron microscope SEMe of the fifth modification example can enjoy the same effects as those described above for the scanning electron microscope SEM.

In each of the third modification example and the fourth modification example described above, the application device 6 c applies a force F1c or a force F1d to the platform 22. On the other hand, the platform driving system 23 can also impart a force to the platform 22 (for example, a force to move the platform 22). Therefore, the scanning electron microscope SEMe may use the interval adjustment system 14 to apply the force F1 to the beam irradiation apparatus 1 or replace it, and use the stage driving system 23 to apply the aforementioned force F1c or F1d to the stage 22. Specifically, when there is no abnormal situation that may cause the beam irradiation device 1 to collide with the sample W, the platform driving system 23 may also move the platform 22 such that the platform 22 is located at a desired position (that is, the platform may also be adjusted). 22 position). On the other hand, when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W, the stage driving system 23 may apply a force F1c or a force F1d to the stage 22 to cause the beam irradiation device 1 and the sample W to be caused. keep away. In this case, collision of the beam irradiation device 1 with the sample W is also appropriately prevented.

In addition, each of the interval adjustment system 14 and the platform drive system 23 serving as the means for applying the force F1 in place of the applying device 6 applies force using power supplied from a power source as described above. In this case, the scanning electron microscope SEMe is substantially equivalent to a scanning electron microscope provided with a device capable of imparting a force F1 (ie, an electric property imparting force F1) using power supplied from a power source. In this case, the applying device 6 applies the force F1 without using the power supplied from the power source in the description, but the force F1 may be applied using the power supplied from the power source. That is, in the description, the applying device 6 applies the force F1 non-electrically, but may also apply the force F1 electrically. For example, the applying device 6 may use electric power supplied from a power source to apply a Coulomb force (ie, an electrostatic force) acting between at least two electrodes as the force F1. In this case, the imparting device 6 may include at least two electrodes. Alternatively, for example, the applying device 6 may use electric power supplied from a power source to apply a Lorentz force (ie, an electromagnetic force) acting between a magnet (such as a permanent magnet or an electromagnet) and a coil as the force F1. In this case, the applying device 6 may include a magnet and a coil. Furthermore, in the case where the device 6 is provided with the electric force F1, the power supplied from a power source different from the power source may be used. As a different power source, a primary battery, a secondary battery, a capacitor, or the like may be used.

In the case where the applying device 6 applies a force F1 using power supplied from a power source in this manner, the state of the applying device 6 can be easily switched between a state where the force F1 is applied and a state where the force F1 is not applied. In this case, the application device 6 may also apply the force F1 when an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W. On the other hand, the application device 6 may not apply the force F1 when there is no abnormality that may cause the beam irradiation device 1 to collide with the sample W.

(3-6) Sixth Modification Example Next, a scanning electron microscope SEMf of a sixth modification example will be described with reference to FIGS. 18 to 19. 18 is a cross-sectional view showing a configuration of a scanning electron microscope SEMf according to a sixth modification. FIG. 19 is a cross-sectional view showing a configuration of a beam irradiation device 1f included in a scanning electron microscope SEMf according to a sixth modification.

As shown in FIGS. 18 and 19, the scanning electron microscope SEMf is provided in place of the above-mentioned scanning electron microscope SEM in place of the beam irradiation device 1 in which the beam optical system 11 and the differential exhaust system 12 are integrated. The beam optical system 11 f is different from the differential beam system 12 f in that the beam irradiation device 1 f is separated (ie, not integrated). The other structure of the scanning electron microscope SEMf may be the same as that of the scanning electron microscope SEM.

The beam irradiating device 1f is different from the above-mentioned beam optical system 11 in that a beam optical system 11f is provided instead of the beam optical system 11. The beam optical system 11 f is different from the beam optical system 11 in that the flange member 161 f extending outward from the outer surface of the frame 111 is formed in the frame 111. Furthermore, the beam optical system 11 f is different from the beam optical system 11 supported by the flange member 13 in that it is supported without the flange member 13. In the example shown in FIG. 18, the beam optical system 11 f may be supported on a support surface SC such as a ceiling in a suspended state via a suspension member. However, the beam optical system 11f may be supported by other supporting methods. The other structures of the beam optical system 11 f may be the same as those of the beam optical system 11.

The beam irradiation device 1f is different from the above-mentioned beam optical system 11 in that a differential exhaust system 12f is provided instead of the differential exhaust system 12. The differential exhaust system 12f is different from the differential exhaust system 12 described above in that it may or may not include the side wall member 122. Therefore, in the sixth modification, the flange member 13 is formed on the outer surface of the vacuum forming member 121. The other structures of the differential exhaust system 12 f may be the same as those of the differential exhaust system 12.

The lower surface of the flange member 161f and the upper surface of the flange member 13 are connected via a cylindrical serpentine tube 162f. The serpentine tube 162f is a member that surrounds the space SPf between the frame 111 of the beam irradiation device 1f and the vacuum forming member 121 of the differential exhaust system 12f, and ensures the airtightness of the space SPf. This space SPf communicates with the beam passing space SPb2. Therefore, the space SPf and the beam passing space SPb2 are exhausted by the vacuum pump 51 to be decompressed. Therefore, it may be said that the serpentine tube 162f is a member for ensuring the airtightness of the beam passing space SPb2 (in other words, maintaining the vacuum degree of the beam passing space SPb2).

Furthermore, the serpentine tube 162f is also a member for separately moving the differential exhaust system 12f and the beam optical system 11f. Specifically, in the sixth modification, the interval adjustment system 14 moves the differential exhaust system 12f to adjust the interval D. On the other hand, the differential exhaust system 12f and the beam optical system 11f are connected by a flexible serpentine tube 162f. Therefore, the force that moves the differential exhaust system 12f is transmitted to the beam optical system 11f by the serpentine tube 162f. absorb. Therefore, the interval adjustment system 14 can adjust the interval D by moving the differential exhaust system 12f without moving the beam optical system 11f. However, the interval adjustment system 14 may adjust the interval D by moving the beam optical system 11f in addition to the differential exhaust system 12f.

Further, the device 6 applies a force F1 to the differential exhaust system 12f to which the flange member 13 is connected. On the other hand, the force F1 applied to the differential exhaust system 12f is absorbed by the serpentine tube 162f before being transmitted to the beam optical system 11f. Therefore, the application device 6 can add the force F1 to the differential exhaust system 12f without applying the force F1 to the beam optical system 11f. Even in this case, collision of the differential exhaust system 12f closer to the sample W than the beam optical system 11f and the sample W is appropriately prevented. That is, the scanning electron microscope SEMf of the sixth modification can enjoy the same effects as those described above for the scanning electron microscope SEM.

In addition, the applying device 6 may apply a force F1 to the beam optical system 11f in addition to or instead of the differential exhaust system 12f. That is, the applying device 6 may also apply the force F1 to the differential exhaust system 12f, or the force F1 to the beam optical system 11f without applying the force F1 to the differential exhaust system 12f, and the beam optical system 11f and the differential exhaust system. At least one of 12f is far from the sample W.

(3-7) Seventh Modification Example Next, a scanning electron microscope SEMg of a seventh modification example will be described with reference to FIG. 20. 20 is a cross-sectional view showing a structure of a scanning electron microscope SEMg of a seventh modification.

As shown in FIG. 20, the scanning electron microscope SEMg is different from the scanning electron microscope SEM described above in that it includes a pressure gauge 17 g. The other structure of the scanning electron microscope SEMg may be the same as that of the scanning electron microscope SEM.

The pressure gauge 17g is a detection device that can detect the pressure in the space between the beam irradiation device 1 and the sample W (in particular, the vacuum region VSP including the beam passing space SPb3). The detection result of the pressure gauge 17 g (that is, the pressure in the vacuum region VSP) is output to the control device 4. The control device 4 determines whether or not an abnormality that may cause the beam irradiation device 1 to collide with the sample W is generated based on the detection result of the pressure gauge 17g. Specifically, there is a possibility that the pressure in the vacuum region VSP changes due to a change in the interval D between the beam irradiation device 1 and the sample W. For example, the smaller the interval D, the more the pressure in the vacuum region VSP may decrease. Furthermore, the smaller the interval D, the higher the possibility that the beam irradiation apparatus 1 collides with the sample W. Therefore, the pressure in the space between the beam irradiation device 1 and the sample W (especially the vacuum region VSP including the beam passage space SPb3) becomes useful for determining whether or not an abnormality may occur that may cause the beam irradiation device 1 to collide with the sample W. Index value. In this case, the control device 4 may determine that there is a possibility that the beam irradiation device 1 and the beam irradiation device 1 may be caused when the pressure in the vacuum region VS is less than a predetermined second lower limit value that is allowable as the pressure in the vacuum region VS. Sample W collided abnormally. In this case, an abnormality smaller than the predetermined second lower limit value that is allowable as the pressure in the vacuum region VS (that is, an abnormality in the pressure in the vacuum region VS) may cause the beam irradiation device 1 to collide with the sample W. An exception.

The scanning electron microscope SEMg of the seventh modification can enjoy the same effects as those described above for the scanning electron microscope SEM.

Furthermore, the beam passage space SPb3 communicates with the beam passage space SPb1 and the beam passage space SPb2, so the pressure of the beam passage space SPb3 (that is, the pressure of the vacuum region VSP) depends on the pressure of the beam passage space SPb1 and the beam passage space SPb2 The possibility of change. Therefore, the pressure gauge 17g may detect the pressure of at least one of the beam passing space SPb1 and the beam passing space SPb2b in addition to or instead of detecting the pressure in the vacuum region VSP. Furthermore, since the beam passing space SPb3 is exhausted by differential exhaust, the pressure of the beam passing space SPb3 (that is, the pressure in the vacuum region VSP) depends on the pressure of the space in the pipe 125 for differential exhaust. The possibility of change. Therefore, the pressure gauge 17g may detect the pressure in the space in the pipe 125 for differential exhaust gas in addition to or instead of detecting the pressure in the vacuum region VSP.

The scanning electron microscope SEMg may be provided with an air microsensor that detects a pressure by flowing a gas in a space that is a target of the pressure in addition to or instead of a pressure gauge 17g.

In addition, when the detection result of the pressure gauge 17g is used to determine whether an abnormality may occur that may cause the beam irradiating device 1 to collide with the sample W, if the pressure gauge 17g is abnormal, there is an improper determination as to whether or not the occurrence of a beam may cause The possibility that the irradiation device 1 collides with the sample W may be abnormal. For example, although an abnormality that may cause the beam irradiation device 1 to collide with the sample W may actually occur, it may be erroneously determined that an abnormality that may cause the beam irradiation device 1 to collide with the sample W may not be generated. As a result, there is a possibility that the beam irradiation device 1 collides with the sample W. Therefore, in the seventh modification, an abnormality generated by the pressure gauge 17g can also be used as an example of an abnormality that may cause the beam irradiation device 1 to collide with the sample W. As an example of such an abnormality occurring in 17 g of pressure gauges, an abnormality in the pressure in the vacuum region VSP cannot be detected by the 17 g of pressure gauges. For example, the pressure gauge 17g normally operates using power supplied from a power source. Therefore, if the power supply from the power supply is stopped, the pressure gauge 17g cannot detect the pressure in the vacuum region VSP. Therefore, as an example of the abnormality generated by the pressure gauge 17g, the power supply to stop the operation of the pressure gauge 17g (or the control device 4 or other abnormality detection device detects that the power supply to stop the pressure gauge 17g from operating is stopped) ) And so on. Alternatively, when the pressure gauge 17g itself fails (for example, a component or part constituting the pressure gauge 17g fails), the pressure gauge 17g cannot detect the pressure in the vacuum region VSP even if the power supply for operating the pressure gauge 17g is not stopped. Therefore, as an example of the abnormality generated by the pressure gauge 17g, an abnormality such as the failure of the pressure gauge 17g itself (or the control device 4 or another abnormality detection device detects a failure of the pressure gauge 17g itself) can be cited. In addition, as an example of the abnormality occurring in the pressure gauge 17g, an abnormality in which the detection result of the pressure gauge 17g cannot be output to the control device 4 (that is, the detection result of the pressure gauge 17g is interrupted) can be cited. As an example of the abnormality generated by the pressure gauge 17g, the control device 4 or another abnormality detection device detects an abnormality such as the failure to output the detection result of the pressure gauge 17g to the control device 4. In addition, as an example of the abnormality generated by the pressure gauge 17g, an abnormality such as a change in the signal related to the detection result of the pressure gauge 17g upon reaching the control device 4 can be mentioned.

(3-8) Eighth Modification Example Next, a scanning electron microscope SEMh of the eighth modification example will be described with reference to FIGS. 21 to 23. 21 is a cross-sectional view showing a configuration of a scanning electron microscope SEMh according to an eighth modification. 22 and 23 are cross-sectional views each showing a configuration of a beam irradiation device 1h provided in a scanning electron microscope SEMh according to an eighth modification.

As shown in FIGS. 21 to 23, the scanning electron microscope SEMh is different from the above-mentioned scanning electron microscope SEM in the following points. The pipe 117 is provided with an opening and closing member (for example, a valve) 181 h that can open and close the pipe 117. An opening and closing member (for example, a valve) 182h that can open and close the piping 125 is disposed in the piping 125. The opening and closing member 181h and the opening and closing member 182h can open and close the piping 117 and the piping 125, respectively, under the control of the control device 4. Specifically, the control device 4 controls the opening / closing member 181h and the opening / closing member 182h so as to close the piping 117 and the piping 125 when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W. When the pipe 117 is closed, the exhaust of the beam passing space SPb1 to the beam passing space SPb3 by the vacuum pump 51 is interrupted. When the pipe 125 is closed, the exhaust of the surrounding space of the beam passing space SPb3 by the vacuum pump 52 (that is, the exhaust of the beam passing space SPb3 by the differential exhaust) is interrupted. Therefore, in the eighth modification, when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W, the vacuum region VSP formed between the beam irradiation device 1h and the sample W disappears. Here, if it is assumed that the vacuum region VSP continues to be formed even when an abnormality may occur that causes the beam irradiation device 1h to collide with the sample W, there is a negative effect on the surface WSu of the sample W facing the vacuum region VSP. The possibility of sucking the portion of the sample WSu facing the vacuum region VSP toward the vacuum region VSP. That is, there is a possibility that the portion of the sample WSu facing the vacuum region VSP is sucked upward in a direction approaching the beam irradiation device 1h. On the other hand, if the vacuum region VSP disappears, there is no possibility that the portion of the sample WSu facing the vacuum region VSP is sucked upward in a manner close to the beam irradiation device 1 h. Therefore, in the eighth modification, the pipe 117 and the pipe 125 are closed when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W, thereby further preventing the beam irradiation device 1h and the sample W from being damaged. collision.

Furthermore, the scanning electron microscope SEMh is different from the scanning electron microscope SEM described above in that a beam irradiation device 1h is provided instead of the beam irradiation device 1. The other structure of the scanning electron microscope SEMh may be the same as that of the scanning electron microscope SEM. The beam irradiating device 1h is different from the aforementioned beam irradiating device 1 in that it includes a blocking member 183h and a blocking member 184h that can be inserted or removed from the path of the electron beam EB in the beam passage space SPb1. The blocking member 183h and the blocking member 184h are each a member that can block the electron beam EB (that is, make it not pass) without using an electric force (that is, non-electrically). For example, the blocking member 183h and the blocking member 184h may be made of a high-permeability material (or insulator) that cannot pass through the electron beam EB. Among them, the scanning electron microscope SEMh may be provided with a blocking device capable of electrically blocking the electron beam EB (ie, preventing it from passing) in addition to or in place of at least one of the blocking member 183h and the blocking member 184h. For example, the scanning electron microscope SEMh may be provided with a capture device that electrically captures charged particles constituting the electron beam EB (for example, a capture device including a Faraday cup and a biasing device that biases the electron beam EB toward the Faraday cup) As a blocking device.

The states of the blocking member 183h and the blocking member 184h can be switched between a state inserted into the path of the electron beam EB and a state not inserted into the path of the electron beam EB under the control of the control device 4. Specifically, when the control device 4 does not cause an abnormality that may cause the beam irradiation device 1h to collide with the sample W, as shown in FIG. 22, the control device 4 is not inserted in each state of the blocking member 183h and the blocking member 184h. The way to the state in the path of the electron beam EB controls a driving system (not shown) of the movable blocking member 183h and the blocking member 184h. As a result, the sample W is irradiated with the electron beam EB through the beam passing space SPb1 to the beam passing space SPb3 which are vacuum spaces. On the other hand, when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W, as described above, the exhaust by the vacuum pump 51 and the vacuum pump 52 is interrupted. Therefore, there is a possibility that the beam passing space SPb1 to the beam passing space SPb3 do not become a vacuum space. In order to prevent irradiation of the electron beam EB through the beam passing space SPb1 to the beam passing space SPb3 through the non-vacuum space, the control device 4 generates an abnormality that may cause the beam irradiation device 1h to collide with the sample W. As shown in FIG. 23, the movable blocking member 183h and the blocking member 184h (not shown) are controlled so that the respective states of the blocking member 183h and the blocking member 184h are inserted into the path of the electron beam EB. Drive System. As a result, the path of the electron beam EB is blocked from the vacuum region VSP. Therefore, the sample W is irradiated with the electron beam EB without passing through the beam passing space SPb1 to the beam passing space SPb3.

The blocking member 183h and the blocking member 184h can also be inserted into the path of the electron beam EB, and can pass the beam through the space SPb1 (ie, non-electrically) without using an electric force (that is, non-electrically). , At least a part of the internal space of the beam irradiation device 1) is a sealed member. However, the scanning electron microscope SEMh may be provided with a sealing device that can seal at least a part of the space SPb1 using an electric force in addition to or instead of at least one of the blocking member 183h and the blocking member 184h. For example, the blocking member 183h and the blocking member 184h may be in a state of being inserted into the path of the electron beam EB, and the space of the beam passing space SPb1 surrounded by the blocking member 183h and the blocking member 184h may be closed. Building blocks. In this case, the vacuum degree of at least a part of the space in the beam passing space SPb1 is maintained after the exhaust by the vacuum pump 51 and the vacuum pump 52 is interrupted. As a result, the time required to resume the exhaust by the vacuum pump 51 and the vacuum pump 52 until the decompression of the beam passing space SPb1 is completed can be shortened.

In particular, the blocking member 183h and the blocking member 184h may be inserted into the path of the electron beam EB, and the beam may pass through at least a part of the space where the electromagnetic lens 114, the objective lens 115, and the electronic detector 116 exist in the space SPb1. Partially enclosed component. Therefore, the blocking member 183h and the blocking member 184h may be arranged such that the electromagnetic lens 114, the objective lens 115, and the electronic detector 116 exist in a space surrounded by the blocking member 183h and the blocking member 184h.

In addition, when the blocking member 183h and the blocking member 184h are members that can seal the beam through at least a part of the space SPb1, the path along the path of the blocking member 183h and the blocking member 184h to the electron beam EB is accompanied. The insertion and exhaust of the beam passage space SPb2 and the beam passage space SPb3 by the vacuum pump 51 are also substantially interrupted. That is, even if the opening and closing member 181h does not close the piping 117, the vacuum region VSP formed in the beam passage space SPb3 disappears. Therefore, the beam irradiation device 1h may not include the opening and closing member 181h.

The control device 4 may stop the vacuum pump 51 and the vacuum pump 52 in addition to or instead of controlling the opening / closing member 181h and the opening / closing member 182h when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W. In this case, the vacuum region VSP formed between the beam irradiation device 1 h and the sample W also disappears. Therefore, collision of the beam irradiation device 1h with the sample W is further prevented.

The control device 4 may stop the electron gun 113 in addition to or instead of controlling the blocking member 183h and the blocking member 184 when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W. In this case, the sample W is also irradiated with the electron beam EB without passing through the beam passing space SPb1 to the beam passing space SPb3.

In addition, in the eighth modification, the scanning electron microscope SEMh may not include the application device 6. In this case, when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W, if the opening and closing member 181h and the opening and closing member 182h and / or the blocking member 183h and the blocking member occur At 184h, when the exhaust of the beam passing space SPb1 to the beam passing space SPb3 is interrupted, the vacuum region VSP disappears, and accordingly the collision of the beam irradiation device 1h with the sample W can be prevented.

(3-9) Ninth Modification Next, a scanning electron microscope SEMi of a ninth modification will be described. The scanning electron microscope SEMi differs from the scanning electron microscope SEM described above in that the scanning electron microscope SEM includes a beam irradiation device 1i instead of the beam irradiation device 1. The other structure of the scanning electron microscope SEMe may be the same as that of the scanning electron microscope SEM. Therefore, the beam irradiation device 1i according to the ninth modification will be described below with reference to FIG. 24. FIG. 24 is a cross-sectional view showing a configuration of a beam irradiation apparatus 1i according to a ninth modification.

As shown in FIG. 24, the beam irradiation device 1i is different from the above-mentioned beam irradiation device 1 in that a gas supply hole 126i is formed on the emission surface 121LS of the vacuum forming member 121. The other configurations of the beam irradiation apparatus 1 i may be the same as those of the beam irradiation apparatus 1.

The gas supply hole 126i is formed so as to surround the beam emission port 1232 and the exhaust groove 124. A plurality of gas supply holes 126i may be formed in the emission surface 121LS so as to be discretely arranged in a discrete arrangement pattern. For example, a plurality of gas supply holes 126i may be formed in the emission surface 121LS so as to be arranged in a ring shape. Alternatively, the gas supply holes 126i may be formed in the emission surface 121LS so as to be continuously distributed in a continuous distribution pattern. For example, an annular gas supply hole 126i may be formed in the emission surface 121LS.

The gas supply hole 126i is connected to a scanning electron microscope SEMi or a scanning type via a pipe 127i formed in the vacuum forming member 121 (and further, if necessary, a side wall member 122) so as to communicate with the gas supply hole 126i. Gas supply device 7 prepared outside the electron microscope SEMi. The gas supply device 7 supplies gas to the gas supply hole 126i via a pipe 127i. The gas may be at least one of air, clean dry air (CDA), and inert gas, for example. Examples of the inert gas include at least one of nitrogen and argon. In addition, the gas may be a gas whose contained water vapor is a predetermined amount or less. The gas supply hole 126i supplies (for example, ejects) the gas supplied from the gas supply device 7 to a space around the vacuum region VSP (that is, a space around the beam passing space SPb3).

The gas supplied to the space around the vacuum region VSP functions as an air curtain that prevents unnecessary substances from entering the vacuum region VSP. That is, the gas supplied to the space around the vacuum region VSP functions as an air curtain that prevents unwanted substances from entering the beam contained in the vacuum region VSP through the space SPb3. As a result, it is difficult to prevent the unnecessary irradiation of the electron beam EB with unnecessary substances that are difficult to enter from the outside of the beam passing space SPb3 to the inside of the beam passing space SPb3. Therefore, the beam irradiation device 1i can appropriately irradiate the electron beam EB to the sample W. In addition, the substance is not required to be a substance that prevents proper irradiation of the electron beam EB. Examples of the unnecessary substance include water vapor (that is, gas-like water molecules) and outgas derived from the resist.

The gas supplied to the space around the vacuum region VSP can also function as an air flow for causing the beam irradiation device 1i to float up with respect to the sample W. In other words, when a gas is supplied from the gas supply hole 126i, the beam irradiation device 1i is suppressed from approaching the sample W by the pressure of a fluid such as a gas supplied from the gas supply hole 126i. As a result, when the gas is supplied from the gas supply hole 126i, the collision between the beam irradiation device 1i and the sample W is further prevented compared with the case where the gas is not supplied from the gas supply hole 126i.

Under the control of the control device 4, the gas supply device 7 may switch between a supply state of supplying gas to the gas supply hole 126i via the pipe 127i and a non-supply state of supplying gas to the gas supply hole 126i without the pipe 127i. For example, the control device 4 may control the gas supply device 7 to supply gas to the gas supply hole 126i through the pipe 127i when an abnormality may occur that may cause the beam irradiation device 1h to collide with the sample W. On the other hand, the control device 4 may control the gas supply device 7 so as not to supply gas to the gas supply hole 126i through the pipe 127i when there is no abnormality that may cause the beam irradiation device 1h to collide with the sample W. In this case, as compared with the case where the gas is not supplied from the gas supply hole 126i, collision between the beam irradiation device 1i and the sample W is further prevented.

In addition, in the ninth modification, the scanning electron microscope SEMi may not include the application device 6. In this case, if the gas is supplied from the gas supply hole 126i at least in the event of an abnormality that may cause the beam irradiation device 1h to collide with the sample W, the beam irradiation device 1h and the sample W can be prevented accordingly. collision.

(3-10) Tenth Modification Next, a scanning electron microscope SEMj of a tenth modification will be described. The scanning electron microscope SEMj is different from the scanning electron microscope SEM described above in that the platform 22j is provided instead of the platform 22. The other structure of the scanning electron microscope SEMj may be the same as that of the scanning electron microscope SEM. Therefore, the following describes the platform 22j according to the tenth modification with reference to FIG. 25. FIG. 25 is a cross-sectional view showing a configuration of a stage 22j according to a tenth modification.

As shown in FIG. 25, the stage 22j includes a holding member 221j and a side wall member 222j. The holding member 221j is a disc-shaped (or other arbitrary shape) member extending along the XY plane. The holding member 221j is a member that holds the sample W on its holding surface (the surface on the + Z side in the example shown in FIG. 25) HSj. The side wall member 222j is a member adjacent to the outer edge of the holding member 221j. The side wall member 222j is integrated with the holding member 221j, but may be a separate member from the holding member 221j. The side wall member 222j is a member that surrounds the holding member 221j in a plan view. In order to surround the holding member 221j, the side wall member 222j may be, for example, a member having a ring shape (or other arbitrary shape) in a plan view. The side wall member 222j is a member formed so as to protrude above (ie, the + Z side) than the holding member 221j. The upper surface of the side wall member 222j (specifically, the surface facing the same side as the holding surface HSj, and the surface on the + Z side in the example shown in FIG. 25) OSj is located above the holding surface HSj of the holding member 221j. Therefore, a recessed space surrounded by the holding member 221j and the side wall member 222j is formed in the platform 22j. The sample W is held by the holding member 221j in a state of being accommodated in the recessed space.

In the tenth modified example, in particular, the upper surface OSj of the side wall member 222j is lower than the holding surface HSj of the holding member 221j so as to become the lower limit value Wh_min of the thickness (ie, the length in the Z-axis direction) of the sample W that is allowed by the standard. The following established quantity Wh_set1 is positioned higher. For example, when the sample W is a semiconductor substrate (such as a silicon wafer) having a diameter of 300 mm, the thickness of the sample W is limited to a range of 750 μm to 800 μm, according to Japan Electronics and Information Technology Japan Electronics and Information Technology Industries Association (JEIDA) standards or Semiconductor Equipment and Material International (SEMI) standards. In this case, the lower limit value Wh_min becomes 750 μm. Therefore, the upper surface OSj of the side wall member 222j is positioned higher than the holding surface HSj of the holding member 221j so as to have a predetermined amount Wh_set1 of 750 μm or less. If the upper surface OSj of the side wall member 222j is aligned with the holding surface HSj of the holding member 221j in this way, as shown in FIG. 26, the beam irradiation device 1 moves relative to the sample W as the platform 22j moves (especially When moving in the direction along the XY plane), collision of the beam irradiation device 1 with the side wall member 222j can be prevented. In particular, no matter what kind of sample W is held on the stage 22j, as long as the sample W meets the standard, it is possible to prevent the beam irradiation device 1 from colliding with the side wall member 222j. Therefore, the scanning electron microscope SEMj of the tenth modification can enjoy the same effects as those described above, and appropriately prevent the beam irradiation device 1 from colliding with the stage 22j (especially with the side wall member 222j). Collision).

Furthermore, in the tenth modification, in order to set the interval D between the emission surface 121LS of the vacuum forming member 121 and the surface WSu (that is, the interval D between the beam irradiation device 1 in the Z-axis direction and the sample W), It is the required interval D_target, and may be gradually narrowed to the required interval D_target with the interval D from a state larger than the required interval D_target in a state where the ejection surface 121LS of the vacuum forming member 121 is located above the upper surface OSj of the side wall member 222j. At least one of the emission surface 121LS and the surface WSu is moved in the Z-axis direction. At this time, even if an abnormality of the interval adjustment system 14 occurs (for example, an abnormality of the force F2 is generated so that the interval D is narrowed), damage to the sample W is prevented.

In the tenth modification, the scanning electron microscope SEMj may not include the application device 6.

(3-11) Eleventh Modification Next, a scanning electron microscope SEMk of the eleventh modification will be described. The scanning electron microscope SEMk is different from the scanning electron microscope SEM described above in that a platform 22k is provided instead of the platform 22. The other structure of the scanning electron microscope SEMk may be the same as that of the scanning electron microscope SEM. Therefore, the following describes the platform 22k of the eleventh modification with reference to FIG. 27. FIG. 27 is a cross-sectional view showing a configuration of a stage 22k according to an eleventh modification.

As shown in FIG. 27, the stage 22k includes a holding member 221k and a side wall member 222k. The holding member 221k is a disc-shaped (or other arbitrary shape) member extending along the XY plane. The holding member 221k is a member that holds the sample W with its holding surface (the surface on the + Z side in the example shown in FIG. 27) HSk. The side wall member 222k is a member adjacent to the outer edge of the holding member 221k. The side wall member 222k is a separate member from the holding member 221k. The side wall member 222k is a member that surrounds the holding member 221k in a plan view. In order to surround the holding member 221k, the side wall member 222k may be, for example, a member having a ring shape (or any other shape) in a plan view.

The side wall member 222k is movable in a direction (for example, the Z-axis direction) crossing the upper surface HSk of the holding member 221k. In order to move the side wall member 222k, the platform 22k includes, for example, a support member 223k disposed on the fixed plate 21, and a lift pin 224k that can be raised and lowered with respect to the support member 223k in a direction crossing the upper surface HSk. A lower surface of the side wall member 222k is connected to an upper portion of the lifting pin 224k. As a result, as the lift pin 224k is raised and lowered, the side wall member 222k is raised and lowered (that is, moved in a direction crossing the upper surface HSk).

In the eleventh modification, in particular, the side wall member 222k is moved in such a manner that the upper surface OSk of the side wall member 222k is set to be a predetermined amount less than the thickness Wh of the sample W held by the holding member 221k compared to the holding surface HSk of the holding member 221k. Wh_set2 is located further up. When the predetermined amount Wh_set2 is consistent with the thickness Wh of the sample W, the upper surface OSk of the side wall member 222k is located on the same plane as the upper surface (that is, the surface WSu) of the sample W. On the other hand, when the predetermined amount Wh_set2 is smaller than the thickness Wh of the sample W, the upper surface OSk of the side wall member 222k is positioned lower than the upper surface (ie, the surface WSu) of the sample W. Therefore, the position of the upper surface OSk of the side wall member 222k (especially the position intersecting with the holding surface HSk) can also be referred to as the position of the surface WSu of the sample W held by the holding member 221k (particularly intersecting the holding surface HSk Position in the direction). That is, the position of the side wall member 222k may be changed such that the upper surface OSk of the side wall member 222k is located at the same height as the surface WSu of the sample W held by the holding member 221k or further below. For example, when the thickness Wh of the sample W held by the holding member 221k is 700 μm, the upper surface OSk of the side wall member 222k is located more than the holding surface HSk of the holding member 221k by a predetermined amount Wh_set2 less than 700 μm. Up. For example, when the holding member 221k that holds the sample W having a thickness Wh of 700 μm is replaced by the retained sample W and the sample W having a thickness Wh of 800 μm is held, the upper surface OSk of the side wall member 222k is compared with While the holding surface HSk of the holding member 221k is positioned above the predetermined amount Wh_set2 of less than 800 μm, the side wall member 222k moves. If the upper surface OSk of the side wall member 222k is aligned with the holding surface HSk of the holding member 221k in this way, in the tenth modification, as in the ninth modification, no matter what kind of sample W is held on the stage 22k can prevent collision between the beam irradiation device 1 and the side wall member 222k. In particular, in the tenth modified example, not only the sample W conforming to the standard but also the sample W not conforming to the standard is held on the stage 22k, the collision of the beam irradiation device 1 and the side wall member 222k can be prevented. Therefore, the scanning electron microscope SEMk of the tenth modified example can enjoy the same effects as those described above, and the collision of the beam irradiation device 1 with the stage 22k (particularly with the side wall member) can be appropriately prevented. 222k collision).

In addition, in the eleventh modification, the distance D between the emission surface 121LS of the vacuum forming member 121 and the surface WSu (that is, the interval D between the beam irradiation device 1 in the Z-axis direction and the sample W may be used). ) Is set to the required interval D_target, and in a state where the emission surface 121LS of the vacuum forming member 121 is above the upper surface OSk of the side wall member 222k, the interval D is gradually changed from the state larger than the required interval D_target to the required interval D_target. In a narrow manner, at least one of the emission surface 121LS and the surface WSu is moved in the Z-axis direction. At this time, even if an abnormality of the interval adjustment system 14 occurs (for example, an abnormality of the force F2 is generated so that the interval D is narrowed), damage to the sample W is prevented.

In the eleventh modification, the scanning electron microscope SEMj may not include the application device 6.

(3-12) Twelfth Modification Next, a scanning electron microscope SEM1 of a twelfth modification will be described with reference to FIG. 28. FIG. 28 is a cross-sectional view showing the structure of a scanning electron microscope SEM1 according to a twelfth modification.

As shown in FIG. 28, the scanning electron microscope SEM1 of the twelfth modification is different from the scanning electron microscope SEM described above in that it includes an optical microscope 17l. The other structures of the scanning electron microscope SEM1 may be the same as the other structures of the scanning electron microscope SEM described above.

The optical microscope 171 is an apparatus capable of optically measuring the state of the test sample W (for example, the state of at least a part of the surface WSu of the sample W). That is, the optical microscope 17l is a device that optically measures the test sample W and can acquire information related to the sample W. In particular, the optical microscope 17l is different from the beam irradiation device 1 (particularly, the electronic detector 116) in a state in which the test sample W can be measured in a vacuum environment in a state where the test sample W can be measured in a vacuum environment.

The optical microscope 171 measures the state of the test sample W before the beam irradiating device 1 irradiates the electron beam EB to the sample W to measure the state of the test sample W. That is, the scanning electron microscope SEM1 uses the optical microscope 17l to measure the state of the test sample W, and then uses the beam irradiation apparatus 1 to measure the state of the test sample W. Here, the optical microscope 17l can measure the state of the test sample W under the atmospheric pressure environment. Therefore, the beam irradiation device 1 may not form the vacuum region VSP while the optical microscope 17l is in the state of measuring the test sample W. On the other hand, the beam irradiation apparatus 1 forms a vacuum region VSP after the measurement of the state of the sample W by the optical microscope 17l, and irradiates the sample W with the electron beam EB.

The stage 22 may be moved while the beam irradiation device 1 is irradiating the electron beam EB on the sample W, so that the sample W is located at a position where the beam irradiation device 1 can irradiate the electron beam EB. The stage 22 may also be moved so that the sample W is located at a position where the test sample W can be counted by the optical microscope 17l while the electron microscope 17l counts the test sample W. The stage 22 may be moved between a position where the beam irradiation device 1 can irradiate the electron beam EB and a position which can be measured by the optical microscope 17l.

The scanning electron microscope SEM1 may use the beam irradiation apparatus 1 to measure the state of the test sample W based on the measurement results of the state of the sample W using the optical microscope 17l. For example, the scanning electron microscope SEM1 may first use the optical microscope 17l to measure the state of a desired region in the test sample W. Then, the scanning electron microscope SEM1 may also use the beam irradiation device 1 to measure the state of the same required area of the test sample W based on the measurement result of the required area of the sample W using the optical microscope 17l (or the same as the required area). Need different states of the region). In this case, a predetermined index that can be used to measure the state of the sample W using the beam irradiation apparatus 1 may be formed in a desired region of the sample W. As an example of a predetermined index, for example, a mark (for example, at least one of a fiducial mark and an alignment mark) used for the alignment of the sample W and the beam irradiation apparatus 1 may be mentioned.

Alternatively, as described above, a fine uneven pattern is formed on the surface WSu of the sample W. For example, when the sample W is a semiconductor substrate, as an example of a fine uneven pattern, a semiconductor substrate coated with a resist is exposed by an exposure device and developed by a developing device. Agent pattern. In this case, for example, the scanning electron microscope SEM1 first uses an optical microscope 17l to measure the state of the uneven pattern formed in a desired region in the sample W. Then, the scanning electron microscope SEM1 may use a beam irradiation device based on a measurement result of a state of a desired region of the sample W using the optical microscope 17l (that is, a measurement result of a state of an uneven pattern formed on the desired region). 1 to measure the state of the uneven pattern formed in the same desired region of the sample W. For example, the scanning electron microscope SEM1 may measure the characteristics of the electron beam EB based on the measurement result of the optical microscope 17l so as to irradiate the electron beam EB most suitable for measuring the uneven pattern, and then use the beam irradiation device 1 to measure the formed sample W The state of the uneven pattern of the same desired area.

The scanning electron microscope SEM1 of such a twelfth modification can also enjoy the same effects as those of the scanning electron microscope SEM. In addition, the scanning electron microscope SEM1 of the twelfth modification can more accurately measure the state of the test sample W than the scanning electron microscope of the comparative example without the optical microscope 17l by using the electron beam EB.

In the above description, the scanning electron microscope SEM1 uses the optical microscope 17l to measure the state of the test sample W, and then uses the beam irradiation apparatus 1 to measure the state of the test sample W. However, the scanning electron microscope SEM1 may perform the state measurement of the sample W using the optical microscope 17l and the state measurement of the sample W using the beam irradiation apparatus 1 simultaneously. For example, the scanning electron microscope SEM1 may use the optical microscope 17l and the beam irradiation device 1 to simultaneously measure the state of a desired region of the test sample W. Alternatively, the scanning electron microscope SEM1 may simultaneously measure the state of the first region of the sample W using the optical microscope 17l and the second region of the sample W using the beam irradiation device 1 (where the second region and the first region Area).

In addition, the scanning electron microscope SEM1 may include any measuring device that can measure the state of the test sample W in an atmospheric pressure environment in addition to or instead of the optical microscope 17l. An example of an arbitrary measurement device is a diffraction interferometer. In addition, the diffraction interferometer generates measurement light and reference light by, for example, branching light source light, and interferes with the reflected light (or transmitted light or scattered light) generated by irradiating the measurement light to the sample W and the reference light. A measuring device that detects the generated interference pattern and measures the state of the test sample W. In addition, as another example of an arbitrary measurement device, a scatterometer may be mentioned. The scatterometer is a measuring device that measures the state of the test sample W by irradiating the sample W with measurement light and receiving scattered light (diffraction light, etc.) from the sample W.

In the description of the scanning electron microscope SEM1, the scanning electron microscope SEM includes an optical microscope 17l. However, each of the scanning electron microscope SEMa of the first modification example to the scanning electron microscope SEMk of the eleventh modification example (and further, a scanning electron microscope SEMm of the thirteenth modification example described later) may each include an optical microscope 17l.

(3-13) Thirteenth Modification Example Next, a scanning electron microscope SEMm of a thirteenth modification example will be described with reference to FIG. 29. FIG. 29 is a cross-sectional view showing a structure of a scanning electron microscope SEMm according to a thirteenth modification.

As shown in FIG. 29, the scanning electron microscope SEMm of the thirteenth modification is different from the scanning electron microscope SEM described above in that it includes a cavity 181m and an air conditioner 182m. The other structure of the scanning electron microscope SEMm may be the same as the other structure of the scanning electron microscope SEM.

The cavity 181m accommodates at least the beam irradiation device 1, the platform device 2, and the support frame 3. However, the cavity 181m may not contain at least a part of the beam irradiation device 1, the platform device 2, and the support frame 3. The chamber 181m may also accommodate other constituent elements (for example, at least a part of the position measuring device 15, the control device 4, and the pump system 5) included in the scanning electron microscope SEMm.

The external space of the cavity 181m is, for example, an atmospheric pressure space. The space inside the chamber 181m (that is, the space containing at least the beam irradiation device 1, the platform device 2, and the support frame 3) is also an atmospheric pressure space, for example. In this case, at least the beam irradiation device 1, the platform device 2, and the support frame 3 are arranged in an atmospheric pressure space. However, as described above, in the atmospheric pressure space inside the chamber 181 m, the beam irradiation device 1 forms a local vacuum region VSP.

The air conditioner 182m can supply gas (for example, at least one of the inert gas and clean dry air) to the internal space of the cavity 181m. The air conditioner 182m can recover gas from the internal space of the chamber 181m. The air conditioner 182m recovers gas from the internal space of the chamber 181m, and maintains the cleanliness of the internal space of the chamber 181m. At this time, the air conditioner 182m can control at least one of the temperature and the humidity of the internal space of the chamber 181m by controlling at least one of the temperature and the humidity of the gas supplied to the internal space of the chamber 181m.

The scanning electron microscope SEMm of such a thirteenth modification can enjoy the same effects as those of the scanning electron microscope SEM.

In the description of the scanning electron microscope SEMm, the scanning electron microscope SEM includes a cavity 181m and an air conditioner 182m. However, each of the scanning electron microscope SEMa of the first modified example to the scanning electron microscope SEM1 of the twelfth modified example may include a cavity 181m and an air conditioner 182m.

(3-14) In the description of the fourteenth modification, the sample W has a size as large as that the vacuum region VSP can cover only a part of the surface WSu of the sample W. On the other hand, in the fourteenth modification, as shown in FIG. 30, which is a cross-sectional view showing a state in which the stage 22 holds the sample W in the fourteenth modification, the sample W may have a vacuum region as small as VSP to cover the test. The size of the degree of the entire surface WSu of the W. Alternatively, the sample W may have a size as small as that the beam passing space SPb3 included in the vacuum region VSP can cover the entire surface WSu of the sample W. In this case, as shown in FIG. 30, the vacuum region VSP formed by the differential exhaust system 12 may cover the surface WSu of the sample W and / or face (ie, contact) the surface WSu of the sample W, as well as Cover at least a part of the surface of the platform 22 (for example, the outer peripheral surface OS of the surface of the platform 22 that is different from the holding surface HS holding the sample W), and / or at least part of the surface of the platform 22 (for example, the outer peripheral surface OS). portion. The outer peripheral surface OS typically includes a surface located around the holding surface HS. In addition, FIG. 30 shows an example in which the scanning electron microscope SEM irradiates the small-sized sample W described in the fourteenth modification example with the electron beam EB for convenience of explanation. However, the scanning electron microscope SEMa to the first modification Each of the scanning electron microscopes SEMm of the 13th modification example may irradiate the electron beam EB to the small-sized sample W described in the 14th modification example.

In the fourteenth modification, the scanning electron microscope SEM may replace the interval D between the emission surface 121LS of the beam emission device 1 and the surface WSu of the sample W as a required interval D_target, and the emission surface 121LS and the surface of the stage 22 The interval Do1 between (for example, the outer peripheral surface OS) becomes a required interval D_target in such a manner that at least one of the interval adjustment system 14 and the platform driving system 23 is controlled.

(3-15) In the fourteenth modification according to the fifteenth modification, the holding surface HS of the platform 22 and the outer peripheral surface OS of the platform 22 are located at the same height. On the other hand, in the fifteenth modification, as shown in FIG. 31 as a cross-sectional view showing a state in which the stage 22 holds the sample W in the fifteenth modification, the holding surface HS and the outer peripheral surface OS may be at different heights. (That is, different positions in the Z-axis direction). FIG. 31 shows an example in which the holding surface HS is positioned lower than the outer peripheral surface OS, but the holding surface HS may be positioned higher than the outer peripheral surface OS. When the holding surface HS is located at a position lower than the outer peripheral surface OS, it can be said that a storage space (that is, a space recessed to accommodate the sample W) that accommodates the sample W is substantially formed in the platform 22. In addition, FIG. 31 shows an example in which the outer peripheral surface OS is located higher than the surface WSu of the sample W, but the outer peripheral surface OS may be located lower than the surface WSu, or the outer peripheral OS may be located at the same height as the surface WSu. . In addition, FIG. 31 shows an example in which the scanning electron microscope SEM irradiates the sample W held on the holding surface HS having a height different from that of the outer peripheral surface OS described in the fifteenth modification example, for the convenience of explanation. The scanning electron microscope SEMa of the first modified example to the scanning electron microscope SEMm of the thirteenth modified example can each irradiate electrons to the sample W held on the holding surface HS having a height different from the outer peripheral surface OS described in the fifteenth modified example. Bundle EB.

In the fifteenth modification, similarly to the fourteenth modification, the sample W may have a size as small as the vacuum region VSP can cover the entire surface WSu of the sample W. In this case, as in the fourteenth modification, the vacuum region VSP forming the differential exhaust system 12 may cover the surface WSu of the sample W and / or the surface WSu facing the sample W, and may also cover the surface of the stage 22. At least a portion of a surface (such as an outer peripheral surface OS), and / or at least a portion of a surface (such as an outer peripheral surface OS) that may also face the platform 22. Alternatively, the sample W may have a size as large as that the vacuum region VSP can cover only a part of the surface WSu of the sample W. In this case, the vacuum region VSP formed by the differential exhaust system 12 covers part of the surface WSu of the sample W and / or part of the surface WSu facing the sample W. On the other hand, the surface of the stage 22 may not be covered. (For example, the outer peripheral surface OS), and / or at least part of the surface (for example, the outer peripheral surface OS) that does not face the platform 22.

In the fifteenth modification, as in the fourteenth modification, the scanning electron microscope SEM can replace the interval D between the emission surface 121LS and the surface WSu as the required interval D_target. The interval Do1 between the surfaces (for example, the outer peripheral surface OS) becomes a required interval D_target in such a manner that at least one of the interval adjustment system 14 and the platform driving system 23 is controlled.

(3-16) Sixteenth Modification In the sixteenth modification, as shown in FIG. 32 which is a cross-sectional view showing a state where the stage 22 holds the sample W in the sixteenth modification, the sample W may be passed through the cover member. 25 to cover it. That is, the electron beam EB may be irradiated to the sample W in a state where the cover member 25 is disposed between the sample W and the beam irradiation device 1 (particularly, the emission surface 121LS). At this time, a through hole may be formed in the cover member 25, and the electron beam EB may be irradiated to the sample W through the through hole of the cover member 25. The cover member 25 may be disposed above the sample W so as to be in contact with the surface WSu of the sample W or to ensure a gap with the surface WSu. In this case, the differential exhaust system 12 may form a vacuum region VSP that covers at least a part of the surface 25s of the cover member 25 instead of a vacuum region VSP that covers at least a part of the surface WSu of the sample W. The differential exhaust system 12 may also form a vacuum region VSP in contact with the surface 25s of the cover member 25 instead of the vacuum region VSP in contact with the surface WSu of the sample W. In addition, FIG. 32 shows an example in which a scanning electron microscope SEM irradiates the sample W covered by the cover member 25 described in the sixteenth modification example with an electron beam EB for convenience of explanation, but of course the scanning electron microscope of the first modification example Each of the microscope SEMa to the scanning electron microscope SEMm of the thirteenth modification can also irradiate the sample W covered by the cover member 25 described in the sixteenth modification with the electron beam EB.

The surface 25s of the cover member 25 may be positioned at the same height as the outer peripheral surface OS of the platform 22. The surface 25s of the cover member 25 may also be located above the outer peripheral surface OS of the platform 22. The surface 25 s of the cover member 25 may be located below the outer peripheral surface OS of the platform 22. The cover member 25 may also be supported by the platform 22. The cover member 25 may also be held by the platform 22. That is, the platform 22 can also function as a holding member that holds the cover member 25. In the eleventh modification, the side wall member 222k may be moved similarly to the case where the surface WSu of the sample W and the upper surface OSk of the side wall member 222k are moved relative to each other, based on the surface 25s of the cover member 25 and the top surface of the side wall member 222k. The relative position of the surface OSk moves.

In the sixteenth modification, the sample W may have a size as small as the vacuum region VSP may cover the entire surface WSu of the sample W, or may have a size as large as the vacuum region VSP may cover only the surface WSu of the sample W. Part of the size of the size.

In the sixteenth modification, the scanning electron microscope SEM may replace the interval D between the emission surface 121LS and the surface WSu as the required interval D_target, and the interval Do2 between the emission surface 121LS and the surface 25s of the cover member 25 may be The interval D_target is required to control at least one of the interval adjustment system 14 and the platform driving system 23.

(3-17) In the description of another modification, the scanning electron microscope SEM uses the force F1 from the applying device 6 to prevent the differential exhaust system 12 included in the beam irradiation device 1 from colliding with the sample W. The reason is that the differential exhaust system 12 includes a member (specifically, the vacuum forming member 121) located below the beam optical system 11. However, the beam optical system 11 may be provided with a member located below the differential exhaust system 12. In this case, the scanning electron microscope SEM may use the force F1 from the application device 6 to prevent the beam optical system 11 provided in the beam irradiation device 1 from colliding with the sample W.

In the above description, the scanning electron microscope SEM uses the force F1 from the application device 6 to prevent the beam irradiation device 1 from colliding with the sample W. However, when the stage 22 does not hold the sample W, there is a possibility that the beam irradiation device 1 hits the stage 22. Therefore, the scanning electron microscope SEM can also use the force F1 from the application device 6 to prevent the beam irradiation device 1 from colliding with the stage 22. Alternatively, the scanning electron microscope SEM may use the force F1 from the application device 6 to prevent the beam irradiation device 1 from colliding with any object that can face the beam irradiation device 1.

In the case where the applying device 6 or the applying device 6c is a device that applies the force F1 in the direction of extension as in the first to fourth modified examples described above, the applying device 6 or the applying device 6c may also be provided with a loan. The force F1 is a force generated by deforming the piezoelectric element using electric power supplied from a power source. In this case, the applying device 6 or the applying device 6c may include a piezoelectric element.

In the description, the control device 4 monitors at least one of the state of the interval adjustment system 14, the state of the position detection device 15, the state of the platform drive system 23, the state of the position detection device 24, and the detection result of the pressure gauge 17g. It is monitored whether or not there is an abnormality that may cause the beam irradiation device 1 to collide with the sample W. However, the control device 4 may use other methods to monitor whether or not an abnormality (hereinafter, simply referred to as “abnormality” in this paragraph) that may cause the beam irradiation device 1 to collide with the sample W is generated. For example, if the focus position of the electron beam EB is set to the surface Wsu (or near) of the sample W as described above, if the interval D is changed, the surface WSu of the sample W and the focus position of the electron beam EB are present. The positional relationship also changes the possibility. Therefore, the control device 4 can also monitor whether or not an abnormality has occurred by monitoring the positional relationship between the surface WSu of the sample W and the focus position of the electron beam EB. Alternatively, as described above, if the interval D is changed, the pressure in the vacuum region VSP may be changed. Therefore, the force required to move the stage 22 of the sample W facing the vacuum region VSP may be changed. Therefore, the control device 4 can also monitor whether or not an abnormality has occurred by monitoring the magnitude of the force required to move the platform 22. Alternatively, the control device 4 may monitor whether an abnormality has occurred based on the detection results of the capacitance sensor including the electrodes arranged on the beam irradiation device 1 and the electrodes arranged on the stage 22. Alternatively, the control device 4 may monitor the presence or absence of garbage attached to the emission surface 121LS of the beam irradiation device 1 to monitor whether an abnormality has occurred. In this case, the control device 4 may determine that an abnormality has occurred when garbage is attached to the ejection surface 121LS. Alternatively, as shown in FIG. 33, the control device 4 may emit the detection light (or detection beam) DL1 traveling along the surface WSu of the sample W through the space between the beam irradiation device 1 and the sample W, and monitor the It is detected whether the light is blocked by the beam irradiation device 1 or the sample W, and it is monitored whether an abnormality has occurred. In this case, when the detection light is blocked by the beam irradiation device 1 or the sample W, it is assumed that the beam irradiation device 1 is too close to the sample W, and the control device 4 determines that an abnormality has occurred. Alternatively, as shown in FIG. 34, the control device 4 may emit detection light (or a detection beam) traveling in a direction crossing the surface WSu of the sample W through the space between the beam irradiation device 1 and the sample W. DL2 monitors the reflected light RL2 from the sample W of the detection light DL2, and monitors whether an abnormality has occurred. In addition, the scanning electron microscope SEM may include an accelerometer for detecting an external force caused by an earthquake or the like. In this case, the detection result of the accelerometer is output to the control device 4. The control device 4 determines whether an abnormality that may cause the beam irradiation device 1 to collide with the sample W is generated based on the detection result of the accelerometer.

In the description, the differential exhaust system 12 is a one-stage differential exhaust system having a single exhaust mechanism (specifically, the exhaust tank 124 and the piping 125). However, the differential exhaust system 12 may be a multi-stage differential exhaust system including a plurality of exhaust mechanisms. In this case, a plurality of exhaust grooves 124 are formed on the emission surface 121LS of the vacuum forming member 121, and a plurality of pipes 125 are formed on the vacuum forming member 121 and communicate with the plurality of exhaust grooves 124, respectively. Each of the plurality of pipes 125 is connected to a plurality of vacuum pumps 52 included in the pump system 5. The exhaust capacities of the plurality of vacuum pumps 52 may be the same or different.

Not limited to the scanning electron microscope SEM, any electron beam device that irradiates the electron beam EB to the sample W (or any other object) may have the same structure as the scanning electron microscope SEM described above. That is, any electron beam device may be provided with the above-mentioned application device 6 and the like. Examples of an arbitrary electron beam device include an electron beam exposure device for forming a pattern on a wafer by exposing an electron beam resist-coated wafer using an electron beam EB, and using an electron beam EB At least one of an electron beam welding device that radiates heat generated from a base material to weld the base material.

Alternatively, it is not limited to an electron beam device, and an arbitrary charged particle beam or energy beam (for example, an ion beam) different from the electron beam EB is irradiated to an arbitrary sample W (or other arbitrary object) or an arbitrary beam device. The structure is the same as that of the scanning electron microscope SEM. That is, any beam device provided with a beam optical system capable of irradiating a charged particle beam or an energy beam may be provided with the aforementioned applying device 6 and the like. Examples of the arbitrary beam device include a Focused Ion Beam (FIB) device that processes or observes a focused ion beam by irradiating a sample, and a soft X-ray area (for example, 5 At least one of EUV exposure devices that exposes a resist-coated wafer with extreme ultraviolet (EUV) light in a wavelength range from nm to 15 nm. Alternatively, it is not limited to a beam device, and an arbitrary irradiation device that irradiates an arbitrary charged particle containing electrons to an arbitrary sample W (or any other object) in an irradiation form different from that of the beam may have the same scanning electron as described above. The same structure of the microscope SEM. That is, any irradiation device provided with an irradiation system capable of irradiating (for example, emitting, generating, ejecting, or charged particles) may be provided with the above-mentioned application device 6 and the like. Examples of the arbitrary irradiation device include an etching device for etching an object using a plasma, and a film forming device (for example, a physical vapor deposition such as a sputtering device) for performing a film forming process on an object using a plasma. (PVD) device and at least one of a Chemical Vapor Deposition (CVD) device).

Or it is not limited to the charged particles, and any arbitrary vacuum device that causes any substance to act on any sample W (or any other object) under vacuum in a different form from the irradiation may also have the first modification described above. At least one of the scanning electron microscope SEMa to the scanning electron microscope SEMm of the thirteenth modified example has the same structure. As an example of an arbitrary vacuum apparatus, the vacuum vapor deposition apparatus which forms a film by making the vapor | steam of the vaporized or sublimated material reach a sample in a vacuum, and accumulate | stores it is mentioned.

(4) Supplementary notes Regarding the embodiment described above, the following supplementary notes will be disclosed.
[Supplementary note 1]
A local vacuum device includes: a vacuum forming member that can form a vacuum region that partially covers a surface of the object in a space on an object held by the holding device; and a device that applies a vacuum to the holding device and the vacuum. At least one of the forming members imparts a force acting to keep the holding device away from the vacuum forming member; and an interval control device that applies a force opposite to the force to the object and the vacuum forming member. The interval is electrically controlled so that the force acting to keep the holding device and the vacuum forming member away from each other is more attractive than the vacuum region attracting the holding device and the vacuum forming member, and It is non-electrical.
[Supplementary note 2]
The local vacuum device according to Supplementary Note 1, wherein the interval control device is provided with at least one of the holding device and the vacuum forming member by the applying device so that the holding device and the vacuum The distance between the object and the vacuum forming member is controlled in a state of a force acting in a manner in which the forming member is distant.
[Supplementary note 3]
The local vacuum device according to Supplementary Note 1 or 2, wherein a force is applied to the object by applying a force to the holding device.
[Supplementary note 4]
A local vacuum device includes: a vacuum forming member that locally forms a vacuum area covering a part of the surface of the object in a space on an object; and a device for applying to at least one of the object and the vacuum forming member. A force acting to keep the object away from the vacuum forming member; and an interval control device that controls an interval between the object and the vacuum forming member.
[Supplementary note 5]
The local vacuum device according to any one of appendices 1 to 4, wherein the interval control device controls the object in a state where the force is applied to at least one of the object and the vacuum forming member. And the vacuum forming member.
[Supplementary note 6]
The local vacuum device according to any one of appendices 1 to 5, wherein the object may be disposed in a first direction with respect to the vacuum forming member, and the force includes orienting the vacuum forming member toward the first vacuum forming member. Force in one direction and second direction.
[Supplementary note 7]
The local vacuum device according to Supplementary Note 6, wherein the interval control device controls the interval using a force that orients the vacuum forming member toward the first direction.
[Supplementary note 8]
The local vacuum device according to any one of appendices 1 to 7, wherein the object may be disposed in a first direction with respect to the vacuum forming member, and the force includes a force that orients the object toward the first direction. force.
[Supplementary note 9]
The local vacuum device according to Supplementary Note 8, wherein the interval control device controls the interval using a force that orients the object toward a second direction opposite to the first direction.
[Supplementary note 10]
The local vacuum device according to any one of appendices 1 to 9, wherein the force is generated using gravity.
[Supplementary note 11]
The local vacuum device according to any one of appendices 1 to 10, wherein the imparting device can impart the force non-electrically.
[Supplementary note 12]
The local vacuum device according to any one of appendices 1 to 11, wherein the applying device can apply the force using at least one of elasticity, magnetic force, and pressure of a fluid.
[Supplementary note 13]
The local vacuum device according to any one of appendices 1 to 12, wherein the vacuum forming member is positioned above the object, and the force is applied to the vacuum forming member in a direction opposite to a direction of gravity.
[Supplementary note 14]
The local vacuum device according to any one of appendices 1 to 13, wherein the object is positioned above the vacuum forming member, and the force is applied to the object in a direction opposite to a direction of gravity.
[Supplementary note 15]
The local vacuum device according to any one of appendices 1 to 14, wherein the vacuum area is in contact with a part of a surface on the object.
[Supplementary note 16]
The local vacuum device according to any one of appendices 1 to 15, wherein when the vacuum region is formed, at least another part of the surface of the object is formed by a non-vacuum region or a vacuum degree lower than that of the vacuum region. Area covered.
[Supplementary note 17]
The local vacuum device according to any one of appendices 1 to 16, wherein the vacuum forming member has a surface provided so as to face the surface of the object and provided with an opening communicating with the exhaust device.
[Supplementary note 18]
The local vacuum device according to Appendix 17, wherein the opening is a first opening, and a second opening is provided around the first opening on the surface.
[Supplementary note 19]
The local vacuum device according to Supplementary Note 18, wherein a degree of vacuum of a space in the first opening is lower than a degree of vacuum of a space in the second opening.
[Supplementary note 20]
The local vacuum device according to any one of appendices 1 to 19, wherein the vacuum forming member is a vacuum forming member of a differential exhaust system that forms a vacuum by: The space exhausting is performed while maintaining the exhaust resistance of the gap between the members while maintaining the air pressure difference from other spaces different from the space.
[Supplementary note 21]
The local vacuum device according to any one of supplementary notes 1 to 20, wherein the applying device applies a force so that a surface of the vacuum forming member facing the surface of the object is far from the object.
[Supplementary note 22]
A local vacuum device includes: a vacuum forming member that can form a vacuum region locally in a space on an object; and an interval control device that controls an interval between the object and the vacuum forming member. When a predetermined abnormal condition is satisfied, a force is applied to at least one of the object and the vacuum forming member so as to move the object away from the vacuum forming member.
[Supplementary note 23]
The local vacuum device according to any one of appendices 1 to 22, wherein the force is used to prevent the object from colliding with the vacuum forming member when a predetermined abnormal condition is satisfied.
[Supplementary Note 24]
The local vacuum device according to supplementary note 23, wherein the force is used to prevent the object from approaching the vacuum forming member, thereby preventing the object from colliding with the vacuum forming member.
[Supplementary note 25]
The local vacuum device according to supplementary note 23 or 24, wherein the object is separated from the vacuum forming member by using the force, thereby preventing the object from colliding with the vacuum forming member.
[Supplementary note 26]
The local vacuum device according to any one of Supplementary Notes 1 to 25, including: a position changing device capable of changing a relative position of the object and the vacuum forming member, and the position changing device is capable of satisfying a predetermined abnormal condition At this time, the position of at least one of the vacuum forming member and the object is changed so that the object is separated from the vacuum forming member.
[Supplementary note 27]
A local vacuum device includes: a vacuum forming member that can form a vacuum area locally in a space on an object; and a position changing device that can change a relative position of the object and the vacuum forming member, the position changing device being When a predetermined abnormal condition is satisfied, the vacuum forming member and the vacuum forming member are changed so that the object and the vacuum forming member are separated from each other in a direction parallel to the direction from the object toward the vacuum forming member. The position of at least one of the objects.
[Supplementary note 28]
The local vacuum device according to any one of appendices 1 to 27, including: an exhaust device for exhausting the vacuum area, and when a predetermined abnormal condition is satisfied, the exhaust area of the vacuum area is formed. Gas break.
[Supplementary note 29]
A local vacuum device includes: a vacuum forming member that can form a vacuum area locally in a space on an object; and an exhaust device that performs exhaust to form the vacuum area, and when a predetermined abnormal condition is satisfied, The exhaust that forms the vacuum region is interrupted.
[Supplementary note 30]
The local vacuum device according to any one of appendices 1 to 29, including: a gas supply device for supplying a gas to a peripheral area located at least a part of the periphery of the vacuum area, the gas supply device satisfying a predetermined abnormal condition Supply of the gas.
[Supplementary note 31]
A local vacuum device includes a vacuum forming member capable of locally forming a vacuum region in a space on an object, and a gas supply device for supplying at least a portion of the periphery of the vacuum region when a predetermined abnormal condition is satisfied. The surrounding area is supplied with gas.
[Supplementary note 32]
The local vacuum device according to any one of Supplementary Notes 1 to 31, comprising: a charged particle irradiation device that irradiates the charged particles to the object through at least a part of the vacuum region; and a blocking member to satisfy a predetermined abnormal condition In this case, the path of the charged particles is blocked from the vacuum region.
[Supplementary note 33]
A local vacuum device comprising: a vacuum forming member that can form a vacuum region locally in a space on an object; a charged particle irradiation device that irradiates the object with charged particles through at least a portion of the vacuum region; and a blocking member, When a predetermined abnormal condition is satisfied, the path of the charged particles is blocked from the vacuum region.
[Supplementary note 34]
The local vacuum device according to Supplementary Note 32 or 33, wherein the blocking member blocks a path of the charged particles from the vacuum region by a non-electrical force.
[Supplementary note 35]
The local vacuum device according to any one of appendices 1 to 34, comprising: a charged particle irradiation device that irradiates the object with charged particles through at least a part of the vacuum region; and a sealed member that satisfies a predetermined abnormal condition. In this case, at least a part of the internal space of the charged particle irradiation device is sealed.
[Supplementary note 36]
A local vacuum device includes: a vacuum forming member that can form a vacuum region locally in a space on an object; a charged particle irradiation device that irradiates the object with charged particles through at least a portion of the vacuum region; and a closed member, When a predetermined abnormal condition is satisfied, at least a part of the internal space of the charged particle irradiation device is sealed.
[Supplementary note 37]
The local vacuum device according to Supplementary Note 35 or 36, wherein the blocking member closes an internal space of the charged particle irradiation device by a non-electric force.
[Supplementary note 38]
The local vacuum device according to any one of Supplementary Notes 22 to 37, comprising: an interval control device that controls an interval between the object and the vacuum forming member, the interval control device being powered by power supplied from a power source Action, the abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source.
[Supplementary note 39]
The local vacuum device according to supplementary notes 22 to 38, wherein the abnormal condition includes that an interval between the object and the vacuum forming member is smaller than a predetermined lower limit value.
[Supplementary note 40]
The local vacuum device according to any one of Supplementary Notes 22 to 39, comprising: a detection device that detects the interval, and the abnormal condition includes a detection result interruption of the detection device and a control device that detects the At least one of the detection results is interrupted.
[Supplementary note 41]
The local vacuum device according to any one of appendixes 22 to 40, comprising: a detection device that detects the interval; the detection device is operated by power supplied from a power source; and the abnormal condition includes a voltage from the power source. The power supply stop and the control device detect at least one of the power supply stop from the power source.
[Supplementary note 42]
The local vacuum device according to supplementary notes 22 to 41, wherein the abnormal condition includes that the pressure in the vacuum region is lower than a predetermined lower limit value.
[Supplementary note 43]
The local vacuum device according to any one of Supplementary Notes 22 to 42, comprising: a pressure gauge that detects a pressure in the vacuum region, and the abnormal condition includes an interruption of a detection result of the pressure gauge and the control device detects the At least one of the detection results of the pressure gauge is interrupted.
[Supplementary note 44]
The local vacuum device according to any one of Supplementary Notes 22 to 43, including a pressure gauge that detects a pressure in the vacuum region, the pressure gauge operates by power supplied from a power source, and the abnormal condition includes a self-powered unit. The power supply stop and the control device of the power supply detect at least one of the power supply stop from the power supply.
[Supplementary note 45]
The local vacuum device according to any one of Supplementary Notes 22 to 44, comprising: a position changing device capable of changing the vacuum forming member and the position in a direction along a surface of the object in contact with the vacuum area. The relative position of the object, the position changing device operates by power supplied from a power source, and the abnormal condition includes the power supply stop from the power source and the control device detects the power from the power source At least one of the supply stops.
[Supplementary note 46]
The local vacuum device according to any one of Supplementary Notes 22 to 45, including: a position changing device capable of changing the vacuum forming member and the position in a direction along a surface of the object in contact with the vacuum area. The relative position of the object, the position changing device includes a position detection system that detects a position of at least one of the vacuum forming member and the object, and the abnormal condition includes a detection result interruption and a control device of the position detection system At least one of the detection results of the position detection system being interrupted is detected.
[Supplementary note 47]
The local vacuum device according to any one of Supplementary Notes 22 to 46, including: a position changing device capable of changing the vacuum forming member and the position in a direction along a surface of the object in contact with the vacuum area. The relative position of the object, the position changing device includes a position detection system that detects a position of at least one of the vacuum forming member and the object, and the position changing device is based on a detection result of the position detection system and the A driving target of the position of at least one of the vacuum forming member and the object to change the position of at least one of the vacuum forming member and the object, and the abnormal condition includes a detection result of the position detection system and The deviation of the drive target exceeds a predetermined upper limit.
[Supplementary note 48]
The local vacuum device described in Supplementary Notes 22 to 47 includes a position changing device capable of changing a relative position of the vacuum forming member and the object in a direction along a surface of the object in contact with the vacuum area. Position, the position changing device includes a position detection system that detects a position of at least one of the vacuum forming member and the object, the position detection system is operated by power supplied from a power source, and the abnormal condition includes The power supply stop and control device of the power supply detects at least one of the power supply stop from the power supply.
[Supplementary note 49]
The local vacuum device according to any one of Supplementary Notes 1 to 26, further comprising: a charged particle irradiation device that irradiates the object with charged particles, at least a part of the charged particle irradiation device and at least a part of the vacuum forming member. Connected, the charged particle irradiation device irradiates the charged particles to the object via at least a part of the vacuum region, the force is imparted to at least one of the object and the charged particle irradiation device, and the force causes the An object is separated from the charged particle irradiation device, thereby acting to keep the object away from the vacuum forming member, and the interval control device controls between the object and at least one of the charged particle irradiation device. The interval between the object and the vacuum forming member is thereby controlled.
[Supplementary note 50]
The local vacuum device according to Appendix 49, wherein the object includes at least one of a sample irradiated with the charged particles and a holding device capable of holding the sample, and the force is applied to the sample. At least one of the holding device and the charged particle irradiation device, the force keeps at least one of the sample and the holding device away from the charged particle irradiation device, thereby bringing the object and The vacuum forming member functions in a manner of being separated, and the interval control device controls an interval between at least one of the sample and the holding device and the charged particle irradiation device, thereby controlling the object and the The vacuum forms the space between the members.
[Supplementary note 51]
The local vacuum device according to any one of supplementary notes 2 to 50, further comprising: a holding device that holds the object, and the force acts to keep the object and the holding device away from the vacuum forming member. .
[Supplementary note 52]
The local vacuum device according to any one of appendices 1 to 51, wherein the vacuum forming member includes a high magnetic permeability material having a relative magnetic permeability of 1,000 or more.
[Supplementary note 53]
The local vacuum device according to any one of Supplementary Notes 1 to 52, comprising: a charged particle irradiation device that irradiates charged particles to the object, and the vacuum region covers a part of the surface of the object and includes the object The path of the charged particles between the surface of the and the charged particle irradiation device.
[Supplementary note 54]
The local vacuum device according to any one of Supplementary Notes 1 to 53, comprising: an energy beam irradiation device that irradiates an energy beam to the object, and the vacuum region covers a part of the surface of the object, including the object. A path of the energy beam between a surface and the energy beam irradiation device.
[Supplementary note 55]
The local vacuum device according to any one of appendices 1 to 54, wherein the pressure in the vacuum region is 1 × 10 ^-3 Pa or less.
[Supplementary note 56]
The local vacuum device according to any one of appendices 1 to 55, wherein a distance between the vacuum forming member and the object is 1 μm or more and 10 μm or less.
[Supplementary note 57]
A method for forming a vacuum region, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on an object held by a holding device; and at least the holding device and at least the vacuum forming member. One of them is configured to control a distance between the object and the vacuum-forming member in a state where a force is applied to move the holding device away from the vacuum-forming member that forms the vacuum region.
[Supplementary note 58]
A method for forming a vacuum region includes locally forming a vacuum region covering a part of a surface of the object in a space on the object; and imparting to at least one of the object and the vacuum forming member such that The distance between the object and the vacuum forming member is controlled in a state of a force acting in a manner that the object and the vacuum forming member forming the vacuum region are separated from each other.
[Supplementary note 59]
A method for forming a vacuum region, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on the object; and imparting at least one of the object and the vacuum forming member to the object A force acting away from the vacuum forming member forming the vacuum region; and controlling an interval between the object and the vacuum forming member.
[Supplementary note 60]
A method for forming a vacuum region, comprising: locally forming a vacuum region covering a part of a surface of the object in a space on the object; and controlling a gap between the object and a vacuum forming member that forms the vacuum region. When the predetermined abnormal condition is satisfied, the interval control device of the control device applies a force acting to keep at least one of the object and the vacuum forming member away from the object and the vacuum forming member.
[Supplementary note 61]
A method for forming a vacuum region includes: forming a vacuum region that partially covers a surface of the object in a space on an object; and using a position changing device that can change a relative position of the object and the vacuum forming member. When the predetermined abnormal condition is satisfied, the vacuum forming member is changed so that the object and the vacuum forming member are separated from each other in a direction parallel to a direction from the object toward the vacuum forming member. And the position of at least one of said objects.
[Supplementary note 62]
A method for forming a vacuum region includes exhausting a space on an object to form a vacuum region locally; and interrupting the exhaust forming the vacuum region when a predetermined abnormal condition is satisfied.
[Supplementary note 63]
A method for forming a vacuum region includes forming a vacuum region locally in a space on an object; and when a predetermined abnormal condition is satisfied, supplying a gas to a peripheral region located at least a part of the periphery of the vacuum region.
[Supplementary note 64]
A method for forming a vacuum region includes: forming a vacuum region locally in a space on an object; irradiating the object with charged particles through at least a part of the vacuum region; and when a predetermined abnormal condition is satisfied, exposing all the The path of the charged particles is blocked from the vacuum region.
[Supplementary note 65]
A method for forming a vacuum region, comprising: locally forming a vacuum region in a space on an object; a self-charged particle irradiation device irradiating the object with charged particles through at least a part of the vacuum region; and a method for satisfying a predetermined abnormal condition. In this case, at least a part of the internal space of the charged particle irradiation device is sealed.

At least a part of the constituent elements of each of the above-mentioned embodiments (including the modification examples, and the same in the following paragraphs) may be appropriately combined with at least another part of the constituent elements of the respective embodiments. It is not necessary to use a part of the constituent elements of each of the embodiments described above. In addition, as long as the laws and regulations permit, all the publications and U.S. patents cited in the above-mentioned embodiments are incorporated as part of the description of this document.

The present invention is not limited to the above-mentioned embodiments, and may be appropriately changed within a range that does not violate the spirit or idea of the invention read from the scope of the patent application and the specification as a whole, and a partial vacuum device and a method for forming a vacuum region accompanied by such changes It is also included in the technical scope of the present invention.

1, 1f, 1h, 1i‧‧‧‧beam irradiation device

2‧‧‧platform device

3‧‧‧ support

4‧‧‧control device

5‧‧‧ pump system

6, 6c‧‧‧ given device

7‧‧‧Gas supply device

11f‧‧‧ Beam Optical System

12f‧‧‧ Differential Exhaust System

13, 161f‧‧‧ flange member

14‧‧‧ Interval adjustment system

15‧‧‧Position measuring device / Position measuring device

17g‧‧‧Pressure gauge

17l‧‧‧light microscope

21‧‧‧Press plate

22, 22j, 22k‧‧‧ platforms

23‧‧‧platform drive system

24‧‧‧Position measuring device

25‧‧‧ cover member

25s, WSu‧‧‧ surface

31‧‧‧ support leg

32, 33c, 223k‧‧‧ Supporting components

51, 52‧‧‧Vacuum pump

111‧‧‧Frame

113‧‧‧ electron gun

114‧‧‧ electromagnetic lens

115‧‧‧ Objective

116‧‧‧Electronic detector

117, 125, 125-21, 125-31, 125-4, 127i‧‧‧ Piping

119, 1231, 1232 ‧‧‧ beam exit

121, 121-1, 121-2, 121-3‧‧‧ Vacuum forming member

121LS‧‧‧ shooting face

122, 222j, 222k‧‧‧ sidewall members

124‧‧‧Exhaust trough

125-1‧‧‧flow

125-22, 125-32‧‧‧‧Flow channel

126i‧‧‧Gas supply hole

162f‧‧‧Serpentine tube

181h, 182h‧‧‧Opening and closing components

181m‧‧‧ chamber

182m‧‧‧Air conditioner

183h, 184h ‧‧‧ blocking member

221j, 221k‧‧‧ holding member

224k‧‧‧lift pin

321‧‧‧ opening

AX‧‧‧ Optical axis

D, Do1, Do2‧‧‧ intervals

D_target‧‧‧Required interval

DL1, DL2‧‧‧‧detection light (detection beam)

EB‧‧‧ Electron Beam

F1, F1a, F1b, F1c, F1d, F2, F2a, F2b, F3c, F3d‧‧‧force

HS, HSj, HSk‧‧‧

OS‧‧‧outer surface

OSj, OSk‧‧‧ Top surface

RL2‧‧‧Reflected light

SC, SF‧‧‧ support

SEM, SEMa, SEMb, SEmc, SEMed, SEMe, SEMf, SEMg, SEMe, SEMe, SEMm ‧‧‧ scanning electron microscope

SP1, SP2, SPg ‧‧‧ space

SPb1, SPb2, SPb2-1 ～ SPb2-3, SPb3‧‧‧ beam passing space

VSP‧‧‧Vacuum area

W‧‧‧Sample

Wh‧‧‧thickness

Wh_min‧‧‧ lower limit

Wh_set1, Wh_set2‧‧‧

FIG. 1 is a cross-sectional view showing a configuration of a scanning electron microscope.

FIG. 2 is a cross-sectional view showing a configuration of a beam irradiation device provided in a scanning electron microscope.

FIG. 3 is a perspective view showing a configuration of a beam irradiation device included in a scanning electron microscope.

FIG. 4 is a sectional view showing a force applied by the device.

FIG. 5 is a cross-sectional view showing a positional relationship between a beam irradiation device and a sample in a case where an abnormality occurs in the interval adjustment system in which an interval cannot be adjusted.

FIG. 6 is a sectional view showing a configuration of a scanning electron microscope according to a first modification.

FIG. 7 is a cross-sectional view showing a force applied by a device in a first modification.

8 is a cross-sectional view showing a positional relationship between a beam irradiation device and a sample in a state where an abnormality in the interval adjustment system has occurred in the interval adjustment system in the first modification.

9 is a cross-sectional view showing a configuration of a scanning electron microscope according to a second modification.

FIG. 10 is a cross-sectional view showing a force applied by a device in a second modification.

11 is a cross-sectional view showing a positional relationship between a beam irradiation device and a sample in a state where an abnormality in an interval cannot be adjusted by the interval adjustment system in the second modification.

FIG. 12 is a sectional view showing a configuration of a scanning electron microscope according to a third modification.

FIG. 13 is a cross-sectional view showing a force applied by a device in a third modification.

14 is a cross-sectional view showing a configuration of a scanning electron microscope according to a fourth modification.

15 is a cross-sectional view showing a force applied by a device in a fourth modification.

16 is a cross-sectional view showing a positional relationship between a beam irradiation device and a sample in a situation where an abnormality in the interval adjustment system has occurred in the interval adjustment system in the fourth modification.

17 is a cross-sectional view showing a configuration of a scanning electron microscope according to a fifth modification.

18 is a cross-sectional view showing a configuration of a scanning electron microscope according to a sixth modification.

19 is a cross-sectional view showing a configuration of a beam irradiation device provided in a scanning electron microscope according to a sixth modification.

20 is a cross-sectional view showing a configuration of a scanning electron microscope according to a seventh modification.

21 is a cross-sectional view showing a configuration of a scanning electron microscope according to an eighth modification.

22 is a cross-sectional view showing a configuration of a beam irradiation apparatus provided in a scanning electron microscope according to an eighth modification.

FIG. 23 is a cross-sectional view showing a configuration of a beam irradiation device provided in a scanning electron microscope according to an eighth modification.

24 is a cross-sectional view showing a configuration of a beam irradiation device provided in a scanning electron microscope according to a ninth modification.

25 is a cross-sectional view showing a configuration of a stage included in a scanning electron microscope according to a tenth modification.

26 is a cross-sectional view showing a positional relationship between a stage and a beam irradiation apparatus according to a tenth modification.

27 is a cross-sectional view showing a configuration of a stage included in a scanning electron microscope according to an eleventh modification.

FIG. 28 is a sectional view showing a configuration of a scanning electron microscope according to a twelfth modification.

FIG. 29 is a sectional view showing a configuration of a scanning electron microscope according to a thirteenth modification.

FIG. 30 is a cross-sectional view showing a state where a stage holds a sample in a fourteenth modification.

FIG. 31 is a cross-sectional view showing a state where a sample is held by a stage in a fifteenth modification.

FIG. 32 is a cross-sectional view showing a state where a stage holds a sample in a sixteenth modified example.

33 is a cross-sectional view showing an example of a method for monitoring whether an abnormality that may cause a collision between the beam irradiation device and a sample occurs.

FIG. 34 is a cross-sectional view showing an example of a method for monitoring whether an abnormality that may cause a collision between the beam irradiation device and a sample occurs.

Claims (94)

A local vacuum device includes: The vacuum forming member has a pipeline that can be connected to the exhaust device, and exhausts the gas in the space in contact with the surface of the object through the pipeline to form a vacuum area; An applying device that applies force to at least one of the object and the vacuum-forming member so as to move the object away from the vacuum-forming member; and An interval control device for controlling an interval between the object and the vacuum forming member, At least a part of the gas in the space around the vacuum region having a higher air pressure than the vacuum region is discharged through the pipe of the vacuum forming member. A local vacuum device includes: A vacuum forming member includes a pipe having a first end connected to an exhaust device and a second end connected to a first space in contact with a surface of an object, and exhausts gas in the first space through the pipe. Forming a vacuum region in the first space with a lower pressure than a second space connected to the first space; An applying device that applies force to at least one of the object and the vacuum-forming member so as to move the object away from the vacuum-forming member; and An interval control device controls an interval between the object and the vacuum forming member. A local vacuum device includes: The vacuum forming member has a pipe that can be connected to the exhaust device, and is in contact with a first portion of the surface of the object by discharging gas through the pipe in a state facing a part of the surface of the object. A vacuum region can be formed in the first space, and the pressure in the vacuum region is lower than the pressure in the second space that is in contact with a second part of the surface different from the first part; An applying device that applies force to at least one of the object and the vacuum-forming member so as to move the object away from the vacuum-forming member; and An interval control device controls an interval between the object and the vacuum forming member. The local vacuum device according to item 2 or 3 of the scope of patent application, wherein the second space cannot be connected to the pipeline without passing through the first space, but if the first space is passed through the first space, Spaces can be connected. A local vacuum device includes: The vacuum forming member includes a pipe that can be connected to an exhaust device, and passes a gas in a space in contact with the surface of the object through a pipe in a state where a surface of an object faces an end of the pipeline. Exhausted from the road, forming a vacuum area; An applying device that applies force to at least one of the object and the vacuum-forming member so as to move the object away from the vacuum-forming member; and An interval control device controls an interval between the object and the vacuum forming member. The partial vacuum device according to any one of claims 1 to 5, wherein the interval control device is in a state where the force is applied to at least one of the object and the vacuum forming member. Next, an interval between the object and the vacuum forming member is controlled. The local vacuum device according to any one of claims 1 to 6, in which the object can be arranged in a first direction with respect to the vacuum forming member, The force includes a force that orients the vacuum forming member in a second direction opposite to the first direction. The local vacuum device according to item 7 of the scope of patent application, wherein the interval control device controls the interval using a force that orients the vacuum forming member toward the first direction. The local vacuum device according to any one of claims 1 to 8 in the scope of patent application, wherein the object can be arranged in a first direction with respect to the vacuum forming member, The force includes a force that directs the object toward the first direction. The local vacuum device according to item 9 of the scope of patent application, wherein the interval control device controls the interval using a force that orients the object toward a second direction opposite to the first direction. The local vacuum device according to any one of claims 1 to 10, wherein the force is generated using gravity. The partial vacuum device according to any one of claims 1 to 11 in the scope of patent application, wherein the imparting device is capable of imparting the force non-electrically. The partial vacuum device according to any one of claims 1 to 12, wherein the applying device is capable of applying the force using at least one of elasticity, magnetic force, and pressure of a fluid. The local vacuum device according to any one of claims 1 to 13, wherein the vacuum forming member is located above the object, The force is imparted to the vacuum forming member in a direction opposite to the direction of gravity. The local vacuum device according to any one of claims 1 to 14, in which the object is located above the vacuum forming member, The force is given to the object in a direction opposite to the direction of gravity. The local vacuum device according to any one of claims 1 to 15, wherein the vacuum area is in contact with a part of a surface on the object. The local vacuum device according to any one of claims 1 to 16, wherein when the vacuum area is formed, at least another part of the surface of the object is covered by a non-vacuum area or a vacuum degree lower The area of the vacuum area is covered. The local vacuum device according to any one of claims 1 to 17, wherein the vacuum forming member has: a portion facing the surface of the object and having communication with the exhaust device Open face. The local vacuum device according to claim 18, wherein the opening is a first opening, and a second opening is provided around the first opening on the surface. The local vacuum device according to item 19 of the scope of patent application, wherein the vacuum degree of the space in the first opening is lower than the vacuum degree of the space in the second opening. The partial vacuum device according to any one of claims 1 to 20 in the scope of the patent application, wherein the vacuum forming member is a vacuum forming member of a differential exhaust method that forms a vacuum by: An exhaust resistance of a gap between the object and the vacuum forming member maintains the space exhaust with a pressure difference from another space different from the space. The local vacuum device according to any one of claims 1 to 20 in the patent application scope, wherein the applying device is provided so that a surface of the vacuum forming member facing the surface of the object is far from the object. force. A local vacuum device includes: A vacuum forming member having a pipe that can be connected to an exhaust device, and exhausting a gas in a space in contact with a surface of an object through the pipe to form a vacuum region; and An interval control device for controlling an interval between the object and the vacuum forming member, At least a part of the gas in the space around the vacuum region having a higher pressure than the vacuum region is discharged through the pipeline of the vacuum forming member, When the interval control device satisfies a predetermined abnormal condition, a force is applied to at least one of the object and the vacuum forming member so as to move the object away from the vacuum forming member. The local vacuum device according to any one of claims 1 to 23, wherein the force is used to prevent the object from colliding with the vacuum forming member when a predetermined abnormal condition is satisfied. . The local vacuum device according to claim 24, wherein the force is used to prevent the object from approaching the vacuum forming member, thereby preventing the object from colliding with the vacuum forming member. The local vacuum device according to claim 24 or claim 25, wherein the force is used to move the object away from the vacuum forming member, thereby preventing the object from colliding with the vacuum forming member . The partial vacuum device according to any one of claims 1 to 26 in the scope of patent application, wherein when a predetermined abnormal condition is satisfied, the exhaust of the vacuum region is interrupted. A local vacuum device includes: A vacuum forming member having a pipe that can be connected to an exhaust device, and exhausting a gas in a space in contact with a surface of an object through the pipe to form a vacuum region; and An exhaust device for exhausting the vacuum area, When a predetermined abnormal condition is satisfied, the exhaust of the vacuum region is interrupted. The partial vacuum device according to any one of the scope of claims 1 to 28 of the patent application scope, including: A gas supply device for supplying a gas to a peripheral region located at least a part of the periphery of the vacuum region, The gas supply device supplies the gas when a predetermined abnormal condition is satisfied. A partial vacuum device, comprising: a vacuum forming member having a pipeline capable of being connected to an exhaust device; and a gas in a space in contact with a surface of an object is discharged through the pipeline to form a vacuum region; The gas supply device supplies a gas to a peripheral region located at least a part of the periphery of the vacuum region when a predetermined abnormal condition is satisfied. The local vacuum device according to any one of claims 1 to 30 in the scope of patent application, including: A charged particle irradiation device for irradiating a sample with charged particles; and A blocking member that blocks a path of the charged particles from the vacuum region when a predetermined abnormal condition is satisfied, The path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region. A local vacuum device includes: The vacuum forming member has a pipeline that can be connected to the exhaust device, and exhausts the gas in the space in contact with the surface of the object through the pipeline to form a vacuum area; A charged particle irradiation device for irradiating a sample with charged particles; and A blocking member that blocks a path of the charged particles from the vacuum region when a predetermined abnormal condition is satisfied, At least a part of the gas in the space around the vacuum region having a higher pressure than the vacuum region is discharged through the pipeline of the vacuum forming member, The path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region. The local vacuum device according to item 31 or item 32 of the scope of patent application, wherein the blocking member blocks the path of the charged particles from the vacuum region by a non-electric force. The partial vacuum device according to any one of the scope of claims 1 to 33 of the patent application scope, including: A charged particle irradiation device for irradiating a sample with charged particles; and The sealed member seals at least a part of the internal space of the charged particle irradiation device when a predetermined abnormal condition is satisfied, The path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region. A local vacuum device includes: The vacuum forming member has a pipeline that can be connected to the exhaust device, and exhausts the gas in the space in contact with the surface of the object through the pipeline to form a vacuum area; A charged particle irradiation device for irradiating a sample with charged particles; and The sealed member seals at least a part of the internal space of the charged particle irradiation device when a predetermined abnormal condition is satisfied, At least a part of the gas in the space around the vacuum region having a higher pressure than the vacuum region is discharged through the pipeline of the vacuum forming member, The path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region. The local vacuum device according to item 34 or item 35 of the scope of the patent application, wherein the sealing member closes the internal space of the charged particle irradiation device by a non-electric force. The local vacuum device according to any one of claims 1 to 36 in the scope of patent application, including: a position changing device capable of changing a relative position of the object and the vacuum forming member, When the position changing device satisfies a predetermined abnormal condition, the position changing device changes the position of at least one of the vacuum forming member and the object so as to keep the object away from the vacuum forming member. A local vacuum device includes: A vacuum forming member having a pipe that can be connected to an exhaust device, and exhausting a gas in a space in contact with a surface of an object through the pipe to form a vacuum region; and A position changing device capable of changing a relative position of the object and the vacuum forming member, At least a part of the gas in the space around the vacuum region having a higher pressure than the vacuum region is discharged through the pipeline of the vacuum forming member, When the position changing device satisfies a predetermined abnormal condition, the position changing device changes the position of the object from the vacuum forming member in a direction parallel to a direction from the object toward the vacuum forming member. The position of at least one of the vacuum forming member and the object. The local vacuum device according to claim 37 or claim 38, wherein the position changing device is capable of changing the vacuum forming member in a direction along a surface of the object in contact with the vacuum area. Relative position to the object, The position changing device operates by power supplied from a power source, The abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source. The local vacuum device according to any one of claims 23 to 36, including: a position changing device capable of changing the position in a direction along a surface of the object in contact with the vacuum area The relative position of the vacuum forming member and the object, The position changing device operates by power supplied from a power source, The abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source. The local vacuum device according to item 23 of the scope of patent application, wherein the interval control device is operated by power supplied from a power source, The abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source. The local vacuum device according to any one of claims 27 to 39 in the scope of patent application, comprising: a space control device that controls a space between the object and the vacuum forming member, The interval control device is operated by power supplied from a power source. The abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source. The local vacuum device according to items 23 to 42 of the scope of patent application, wherein the abnormal condition includes that an interval between the object and the vacuum forming member is smaller than a predetermined lower limit value. The partial vacuum device according to any one of claims 23 to 43 in the scope of patent application, comprising: a detection device that detects an interval between the object and the vacuum forming member, The abnormal condition includes at least one of the detection result of the detection device being interrupted and the control device detecting that the detection result of the detection device is interrupted. The partial vacuum device according to any one of claims 23 to 43 in the scope of patent application, comprising: a detection device that detects an interval between the object and the vacuum forming member, The detection device operates by power supplied from a power source, The abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source. The local vacuum device according to items 23 to 45 of the scope of patent application, wherein the abnormal condition includes that the pressure in the vacuum region is lower than a predetermined lower limit value. The local vacuum device according to any one of claims 23 to 46 in the scope of patent application, comprising: a pressure gauge, which detects the pressure in the vacuum region, The abnormal condition includes at least one of a detection result interruption of the pressure gauge and a control device detecting the detection result interruption of the pressure gauge. The local vacuum device according to any one of claims 23 to 46 in the scope of patent application, comprising: a pressure gauge, which detects the pressure in the vacuum region, The pressure gauge operates with power supplied from a power source, The abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source. The local vacuum device according to any one of claims 23 to 48, including: a position detection system that detects a position of at least one of the vacuum forming member and the object, The abnormal condition includes at least one of a detection result interruption of the position detection system and a control device detecting the detection result interruption of the position detection system. The partial vacuum device according to any one of claims 23 to 49, including: a position changing device capable of changing the position in a direction along a surface of the object in contact with the vacuum area. A relative position of the vacuum forming member and the object; and a position detection system that detects a position of at least one of the vacuum forming member and the object, The position changing device changes a position of at least one of the vacuum forming member and the object based on a detection result of the position detection system and a driving target of a position of at least one of the vacuum forming member and the object. position, The abnormal condition includes that a deviation between a detection result of the position detection system and the driving target exceeds a predetermined upper limit value. The local vacuum device according to any one of claims 23 to 50, including: a position detection system that detects a position of at least one of the vacuum forming member and the object, The position detection system operates by power supplied from a power source, The abnormal condition includes at least one of the power supply stop from the power source and the control device detecting the power supply stop from the power source. The local vacuum device according to any one of the scope of claims 1 to 22 of the scope of patent application, further comprising: a charged particle irradiation device that irradiates the sample with the charged particles, At least a part of the charged particle irradiation device is connected to at least a part of the vacuum forming member, A path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region, The force is imparted to at least one of the object and the charged particle irradiation device, The force moves the object away from the charged particle irradiation device, thereby acting in a manner to keep the object away from the vacuum forming member, The interval control device controls an interval between the object and at least one of the charged particle irradiation devices, thereby controlling an interval between the object and the vacuum forming member. The local vacuum device according to claim 52, wherein the object includes at least one of a sample irradiated with the charged particles and a holding device capable of holding the sample, The force is applied to at least one of the sample, the holding device, and the charged particle irradiation device, The force moves at least one of the sample and the holding device away from the charged particle irradiation device, thereby acting to keep the object away from the vacuum forming member, The interval control device controls an interval between at least one of the sample and the holding device and the charged particle irradiation device, thereby controlling an interval between the object and the vacuum forming member. The partial vacuum device according to any one of claims 1 to 22 of the scope of patent application, further comprising: a holding device that holds the object, and the force to cause the object and the holding device to be in communication with the vacuum The forming member acts in a manner away from it. A local vacuum device includes: The vacuum forming member has a pipeline that can be connected to the exhaust device, and exhausts the gas in the space in contact with the surface of the object held by the holding device through the pipeline to form a vacuum area; An applying device that applies force to at least one of the holding device and the vacuum forming member so as to keep the holding device and the vacuum forming member away; and An interval control device for electrically controlling an interval between the object and the vacuum forming member using a force opposite to the force, At least a part of the gas in the space around the vacuum region having a higher pressure than the vacuum region is discharged through the pipeline of the vacuum forming member, The force acting to keep the holding device away from the vacuum forming member is more attractive than the vacuum in the vacuum region to attract the holding device and the vacuum forming member, and is non-electrical. The local vacuum device according to claim 55, wherein the interval control device is provided with at least one of the holding device and the vacuum forming member by the applying device so that the holding device In a state of a force acting away from the vacuum forming member, an interval between the object and the vacuum forming member is controlled. The local vacuum device according to claim 55 or claim 56, wherein the object is given a force by applying a force to the holding device. The local vacuum device according to any one of claims 1 to 57 of the scope of patent application, comprising: an energy beam irradiation device, capable of irradiating the sample with an energy beam, The path of the energy beam irradiated from the energy beam irradiation device includes at least a part of the vacuum region. For example, the local vacuum device according to any one of claims 1 to 30, 38, and 54 to 57 of the scope of patent application, including: a charged particle irradiation device for irradiating a sample with charged particles The path of the charged particles irradiated from the charged particle irradiation device includes at least a part of the vacuum region. The local vacuum device according to any one of claims 31 to 36, 52, 53, 53, 58 and 59, wherein the surface of the object includes the test At least part of the surface. The local vacuum device according to any one of claims 31 to 36, 52, 53, 53, 58 and 59, wherein the face of the object includes holding the At least a part of the surface of the component of the sample. The partial vacuum device according to any one of claims 31 to 36, 52, 53, 53, 58 and 59, wherein the surface of the object includes At least a part of a surface of a member between the sample and the vacuum forming member. The local vacuum device according to any one of claims 1 to 62 in the scope of the patent application, wherein the vacuum forming member includes a high-permeability material having a relative magnetic permeability of 1,000 or more. The local vacuum device according to any one of claims 1 to 63 in the scope of patent application, wherein the pressure in the vacuum region is 1 × 10 ^-3 Pa or less. The local vacuum device according to any one of claims 1 to 64, wherein a distance between the vacuum forming member and the object is 1 μm or more and 10 μm or less. The local vacuum device according to any one of claims 1 to 65, wherein at least a part of the surface of the object faces at least a part of the vacuum area. The local vacuum device according to any one of claims 1 to 66, wherein at least a part of the surface of the object is covered by at least a part of the vacuum area. The local vacuum device according to any one of claims 1 to 67, wherein a part of the surface of the object faces the vacuum region, and another part of the surface of the object faces atmospheric pressure region. A method for forming a vacuum region includes: Using a vacuum forming member having a pipe that can be connected to the exhaust device, discharging the gas in the space in contact with the surface of the object held by the holding device through the pipe to form a vacuum area; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; and And controlling at least one of the holding device and the vacuum forming member with a force acting to keep the holding device and the vacuum forming member forming the vacuum region away from the holding device and the vacuum forming member. The interval between the vacuum forming members is described. A method for forming a vacuum region includes: Using a vacuum forming member having a pipeline capable of being connected to the exhaust device, discharging the gas in the space in contact with the surface of the object through the pipeline to form a vacuum region; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; and Controlling at least one of the object and the vacuum forming member with a force acting to keep the object away from the vacuum forming member forming the vacuum region, controlling the object and the vacuum Form spaces between components. A method for forming a vacuum region includes: Using a vacuum forming member having a pipeline capable of being connected to the exhaust device, discharging the gas in the space in contact with the surface of the object through the pipeline to form a vacuum region; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; Applying force to at least one of the object and the vacuum-forming member so as to move the object away from the vacuum-forming member that forms the vacuum region; and An interval between the object and the vacuum forming member is controlled. A method for forming a vacuum region includes: Using a vacuum forming member having a pipeline capable of being connected to the exhaust device, discharging the gas in the space in contact with the surface of the object through the pipeline to form a vacuum region; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; and Using an interval control device that controls the interval between the object and the vacuum forming member that forms the vacuum region, when a predetermined abnormal condition is satisfied, at least one of the object and the vacuum forming member is given A force acting to move the object away from the vacuum forming member. A method for forming a vacuum region includes: Using a vacuum forming member having a pipeline capable of being connected to the exhaust device, discharging the gas in the space in contact with the surface of the object through the pipeline to form a vacuum region; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; and A position changing device capable of changing the relative position of the object and the vacuum-forming member is used to make the object and the vacuum-forming member toward and from the object when a predetermined abnormal condition is satisfied. The position of at least one of the vacuum forming member and the object is changed so that the direction of the vacuum forming member is distant in a parallel direction. A method for forming a vacuum region includes: The gas in the space in contact with the surface of the object is discharged through the pipeline to form a vacuum area; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; and When a predetermined abnormal condition is satisfied, the exhaust of the vacuum region is interrupted. A method for forming a vacuum region includes: The gas in the space in contact with the surface of the object is discharged through the pipeline to form a vacuum area; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; and When a predetermined abnormal condition is satisfied, a gas is supplied to a peripheral region located in at least a part of the periphery of the vacuum region. A method for forming a vacuum region includes: The gas in the space in contact with the surface of the object is discharged through the pipeline to form a vacuum area; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; Irradiating a sample with charged particles passing through a passing space including at least a part of the vacuum region; and When a predetermined abnormal condition is satisfied, the path of the charged particles is blocked from the vacuum region. A method for forming a vacuum region includes: The gas in the space in contact with the surface of the object is discharged through the pipeline to form a vacuum area; Discharging at least a part of the gas in the space around the vacuum area with a higher pressure than the vacuum area through the pipeline; Irradiating a sample with charged particles passing through a passing space including at least a part of the vacuum region; and When a predetermined abnormal condition is satisfied, at least a part of the internal space of the charged particle irradiation device is sealed. A local vacuum device includes: A vacuum forming member capable of locally forming a vacuum area covering a part of a surface of the object in a space on the object held by the holding device; An applying device that applies force to at least one of the holding device and the vacuum forming member so as to keep the holding device and the vacuum forming member away; An interval control device for electrically controlling an interval between the object and the vacuum forming member using a force opposite to the force; The force acting to keep the holding device away from the vacuum forming member is more attractive than the vacuum region to attract the holding device and the vacuum forming member, and is non-electrical. A local vacuum device includes: A vacuum forming member capable of locally forming a vacuum area covering a part of the surface of the object in a space on the object; An applying device that applies force to at least one of the object and the vacuum-forming member so as to move the object away from the vacuum-forming member; and An interval control device controls an interval between the object and the vacuum forming member. A local vacuum device includes: A vacuum forming member capable of locally forming a vacuum region in a space on an object; and An interval control device for controlling an interval between the object and the vacuum forming member, When the interval control device satisfies a predetermined abnormal condition, a force is applied to at least one of the object and the vacuum forming member so as to move the object away from the vacuum forming member. A local vacuum device includes: A vacuum forming member capable of locally forming a vacuum region in a space on an object; and A position changing device capable of changing a relative position of the object and the vacuum forming member, When the position changing device satisfies a predetermined abnormal condition, the position changing device changes the position of the object from the vacuum forming member in a direction parallel to a direction from the object toward the vacuum forming member. The position of at least one of the vacuum forming member and the object. A local vacuum device includes: A vacuum forming member capable of locally forming a vacuum region in a space on an object; and An exhaust device for exhausting the vacuum area, When a predetermined abnormal condition is satisfied, the exhaust of the vacuum region is interrupted. A local vacuum device includes: A vacuum forming member capable of locally forming a vacuum region in a space on an object; and The gas supply device supplies a gas to a peripheral region located at least a part of the periphery of the vacuum region when a predetermined abnormal condition is satisfied. A local vacuum device includes: The vacuum forming member can form a vacuum area locally in the space on the object; A charged particle irradiation device that irradiates the object with charged particles through at least a part of the vacuum region; and The blocking member blocks the path of the charged particles from the vacuum region when a predetermined abnormal condition is satisfied. A local vacuum device includes: The vacuum forming member can form a vacuum area locally in the space on the object; A charged particle irradiation device that irradiates the object with charged particles through at least a part of the vacuum region; and The sealed member seals at least a part of the internal space of the charged particle irradiation device when a predetermined abnormal condition is satisfied. A method for forming a vacuum region includes: Locally forming a vacuum area covering a part of the surface of the object in a space on the object held by the holding device; and And controlling at least one of the holding device and the vacuum forming member with a force acting to keep the holding device and the vacuum forming member forming the vacuum region away from the holding device and the vacuum forming member. The interval between the vacuum forming members is described. A method for forming a vacuum region includes: Locally forming a vacuum region covering a part of the surface of the object in the space on the object; and Controlling at least one of the object and the vacuum forming member with a force acting to keep the object away from the vacuum forming member forming the vacuum region, controlling the object and the vacuum Form spaces between components. A method for forming a vacuum region includes: Locally forming a vacuum area covering a part of the surface of the object in the space on the object; Applying force to at least one of the object and the vacuum-forming member so as to move the object away from the vacuum-forming member that forms the vacuum region; and An interval between the object and the vacuum forming member is controlled. A method for forming a vacuum region includes: Locally forming a vacuum region covering a part of the surface of the object in the space on the object; and Using an interval control device that controls the interval between the object and the vacuum forming member that forms the vacuum region, when a predetermined abnormal condition is satisfied, at least one of the object and the vacuum forming member is given A force acting to move the object away from the vacuum forming member. A method for forming a vacuum region includes Locally forming a vacuum region covering a part of the surface of the object in the space on the object; and A position changing device capable of changing the relative position of the object and the vacuum-forming member is used to make the object and the vacuum-forming member toward and from the object when a predetermined abnormal condition is satisfied. The position of at least one of the vacuum forming member and the object is changed so that the direction of the vacuum forming member is distant in a parallel direction. A method for forming a vacuum region includes: Exhaust the space on the object to form a vacuum area locally; and When a predetermined abnormal condition is satisfied, the exhaust of the vacuum region is interrupted. A method for forming a vacuum region includes: Forming a vacuum region locally in the space on the object; and When a predetermined abnormal condition is satisfied, a gas is supplied to a peripheral region located in at least a part of the periphery of the vacuum region. A method for forming a vacuum region includes: Forming a vacuum area locally in the space on the object; Irradiating the object with charged particles via at least a portion of the vacuum region; and When a predetermined abnormal condition is satisfied, the path of the charged particles is blocked from the vacuum region. A method for forming a vacuum region includes: Forming a vacuum area locally in the space on the object; The self-charged particle irradiation device irradiates the charged particles to the object through at least a part of the vacuum region; and When a predetermined abnormal condition is satisfied, at least a part of the internal space of the charged particle irradiation device is sealed.