以下，一方面參照圖式一方面對局部真空裝置、帶電粒子裝置、真空區域的形成方法、以及帶電粒子的照射方法的實施形態進行說明。以下，使用經由局部的真空區域VSP將電子束EB照射於試樣W並獲取與該試樣W有關的資訊（例如計測試樣W的狀態）的掃描式電子顯微鏡（Scanning Electron Microscope）SEM，來對局部真空裝置、帶電粒子裝置、真空區域的形成方法、以及帶電粒子的照射方法的實施形態進行說明。試樣W例如為半導體基板。然而，試樣W亦可為與半導體基板不同的物體。試樣W例如是直徑為約300 mm，厚度成為約750 μm～800 μm的圓板狀基板。然而，試樣W亦可為具有任意尺寸的任意形狀的基板（或物體）。例如，試樣W亦可為用於液晶顯示元件等顯示器的方形基板或用於光罩（photomask）的方形基板。Hereinafter, embodiments of a partial vacuum device, a charged particle device, a method of forming a vacuum region, and a method of irradiating charged particles will be described with reference to the drawings. The following uses a scanning electron microscope (Scanning Electron Microscope) SEM that irradiates the electron beam EB to the sample W through the local vacuum region VSP and obtains information about the sample W (for example, the state of the test sample W). An embodiment of a partial vacuum device, a charged particle device, a method of forming a vacuum region, and a method of irradiating charged particles will be described. The sample W is, for example, a semiconductor substrate. However, the sample W may be an object different from the semiconductor substrate. The sample W is, for example, a disc-shaped substrate having a diameter of about 300 mm and a thickness of about 750 μm to 800 μm. However, the sample W may also be a substrate (or object) of any shape having any size. For example, the sample W may be a square substrate used for a display such as a liquid crystal display element or a square substrate used for a photomask.
另外，以下的說明中，使用由彼此正交的X軸、Y軸及Z軸所定義的XYZ正交座標系，對構成掃描式電子顯微鏡SEM的各種構成要素的位置關係進行說明。再者，以下的說明中，為了方便說明，設X軸方向及Y軸方向分別為水平方向（即，水平面內的既定方向），Z軸方向為鉛垂方向（即，與水平面正交的方向，實質上為上下方向）。進而，設+Z側相當於上方（即，上側），-Z側相當於下方（即，下側）。再者，Z軸方向為與掃描式電子顯微鏡SEM所具備的後述的束光學系統11的光軸AX平行的方向。另外，將繞X軸、Y軸及Z軸的旋轉方向（換言之，傾斜方向）分別稱為θX方向、θY方向及θZ方向。In addition, in the following description, the positional relationship of the various components which comprise the scanning electron microscope SEM is demonstrated using the XYZ orthogonal coordinate system defined by the X-axis, the Y-axis, and the Z-axis orthogonal to each other. Furthermore, in the following description, for convenience of description, let the X-axis direction and the Y-axis direction be the horizontal direction (ie, the predetermined direction in the horizontal plane), and the Z-axis direction be the vertical direction (ie, the direction orthogonal to the horizontal plane) , Essentially up and down direction). Furthermore, it is assumed that the +Z side corresponds to the upper side (that is, the upper side), and the -Z side corresponds to the lower side (that is, the lower side). In addition, the Z-axis direction is a direction parallel to the optical axis AX of the beam optical system 11 to be described later provided in the scanning electron microscope SEM. In addition, the rotation directions (in other words, the tilt directions) about the X axis, the Y axis, and the Z axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.
（1）掃描式電子顯微鏡SEM的結構
首先，一方面參照圖1～圖4，一方面對掃描式電子顯微鏡SEM的結構進行說明。圖1為表示掃描式電子顯微鏡SEM的結構的剖面圖。圖2為表示掃描式電子顯微鏡SEM所具備的束照射裝置1的結構的剖面圖。圖3為表示掃描式電子顯微鏡SEM所具備的束照射裝置1的結構的立體圖。圖4（a）為表示掃描式電子顯微鏡SEM所具備的平台22的結構的剖面圖，圖4（b）為表示掃描式電子顯微鏡SEM所具備的平台22的結構的平面圖。再者，為了簡化圖式，圖1中對掃描式電子顯微鏡SEM的一部分構成要素未表示其剖面。(1) Structure of scanning electron microscope SEM
First, referring to FIGS. 1 to 4, the structure of the scanning electron microscope SEM will be described. FIG. 1 is a cross-sectional view showing the structure of a scanning electron microscope SEM. 2 is a cross-sectional view showing the structure of a beam irradiation device 1 included in a scanning electron microscope SEM. FIG. 3 is a perspective view showing the configuration of the beam irradiation device 1 included in the scanning electron microscope SEM. FIG. 4( a) is a cross-sectional view showing the structure of the platform 22 included in the scanning electron microscope SEM, and FIG. 4( b) is a plan view showing the structure of the platform 22 included in the scanning electron microscope SEM. In addition, in order to simplify the drawing, some of the components of the scanning electron microscope SEM in FIG. 1 are not shown in cross section.
如圖1所示，掃描式電子顯微鏡SEM具備束照射裝置1、平台裝置2、支持架3、控制裝置4以及泵系統5。進而，泵系統5具備真空泵51及真空泵52。As shown in FIG. 1, the scanning electron microscope SEM includes a beam irradiation device 1, a platform device 2, a support frame 3, a control device 4, and a pump system 5. Furthermore, the pump system 5 includes a vacuum pump 51 and a vacuum pump 52.
束照射裝置1可自束照射裝置1向下方射出電子束EB。束照射裝置1可對配置於束照射裝置1的下方的平台裝置2所保持的試樣W照射電子束EB。為了對試樣W照射電子束EB，束照射裝置1如圖2及圖3所示，具備束光學系統11及差動排氣系統12。The beam irradiation device 1 can emit the electron beam EB downward from the beam irradiation device 1. The beam irradiation device 1 can irradiate the electron beam EB to the sample W held by the stage device 2 disposed below the beam irradiation device 1. In order to irradiate the sample W with the electron beam EB, the beam irradiation device 1 includes a beam optical system 11 and a differential exhaust system 12 as shown in FIGS. 2 and 3.
如圖2所示，束光學系統11具備框體111。框體111為沿束光學系統11的光軸AX延伸（即，沿Z軸延伸）的、於內部確保有束通過空間SPb1的圓筒狀構件。束通過空間SPb1被用作電子束EB通過的空間。為了防止通過束通過空間SPb1的電子束EB通過框體111（即，向框體111的外部漏出），以及/或者為了防止束照射裝置1的外部的磁場（所謂干擾磁場）對通過束通過空間SPb1的電子束EB造成影響，框體111亦可由高磁導率材料構成。作為高磁導率材料的一例，可列舉高導磁合金（permalloy）及矽鋼的至少一者。該些高磁導率材料的相對磁導率為1000以上。As shown in FIG. 2, the beam optical system 11 includes a frame 111. The frame 111 is a cylindrical member that extends along the optical axis AX of the beam optical system 11 (that is, extends along the Z axis) and secures a beam passage space SPb1 inside. The beam passing space SPb1 is used as a space through which the electron beam EB passes. In order to prevent the electron beam EB passing through the beam passing space SPb1 from passing through the frame 111 (ie, leaking to the outside of the frame 111), and/or to prevent the external magnetic field of the beam irradiation device 1 (so-called interference magnetic field) from passing through the beam passing space The electron beam EB of SPb1 affects, and the frame 111 may also be made of a material with high permeability. As an example of the high permeability material, at least one of a high permeability alloy (permalloy) and silicon steel can be cited. The relative permeability of these high permeability materials is 1000 or more.
束通過空間SPb1在照射電子束EB的期間中成為真空空間。具體而言，對束通過空間SPb1經由配管（即，管路）117而連結有真空泵51，所述配管（即，管路）117以與束通過空間SPb1連通的方式（即，以相連的方式）形成於框體111（進而，後述的側壁構件122）。真空泵51將束通過空間SPb1排氣而較大氣壓進一步減壓，以使束通過空間SPb1成為真空空間。因此，本實施形態的真空空間亦可意指壓力低於大氣壓的空間。尤其，真空空間亦可意指僅以不妨礙電子束EB向試樣W的適當照射的程度而存在氣體分子的空間（換言之，成為不妨礙電子束EB向試樣W的適當照射的真空度的空間）。束通過空間SPb1經由形成於框體111的下表面的束射出口（即，開口）119，與框體111的外部的空間（更具體而言，後述的差動排氣系統12的束通過空間SPb2）連通。再者，束通過空間SPb1亦可於不照射電子束EB的期間中成為真空空間。The beam passing space SPb1 becomes a vacuum space during irradiation of the electron beam EB. Specifically, the vacuum pump 51 is connected to the beam passage space SPb1 via a pipe (ie, pipe) 117 that communicates with the beam passage space SPb1 (ie, in a connected manner) ) Is formed in the frame 111 (further, a side wall member 122 described later). The vacuum pump 51 evacuates the beam passing space SPb1 and further reduces the atmospheric pressure to make the beam passing space SPb1 a vacuum space. Therefore, the vacuum space of this embodiment may also mean a space with a pressure lower than atmospheric pressure. In particular, the vacuum space may also mean a space in which gas molecules exist only to the extent that does not hinder the appropriate irradiation of the electron beam EB to the sample W (in other words, a vacuum degree that does not hinder the proper irradiation of the sample W by the electron beam EB space). The beam passage space SPb1 passes through a beam exit (ie, opening) 119 formed on the lower surface of the casing 111 and a space outside the casing 111 (more specifically, a beam passage space of the differential exhaust system 12 described later) SPb2) Connectivity. In addition, the beam passage space SPb1 may be a vacuum space while the electron beam EB is not irradiated.
束光學系統11更具備電子槍113、電磁透鏡114、物鏡115以及電子檢測器116。電子槍113向-Z側發射電子束EB。再者，亦可代替電子槍113而使用在經光照射時發射電子的光電變換面。電磁透鏡114控制電子槍113所發射的電子束EB。例如，電磁透鏡114亦可控制電子束EB於既定的光學面（例如，與電子束EB的光路交叉的假想面）上形成的像的旋轉量（即，θZ方向的位置）、該像的倍率、及與成像位置對應的焦點位置的任一個。物鏡115使電子束EB以既定的縮小倍率於試樣W的表面（具體而言，由電子束EB照射的面，於圖1及圖2的所示的例子中為朝向+Z側且沿著XY平面的面）WSu成像。電子檢測器116為使用pn接合或pin接合的半導體的半導體型電子檢測裝置（即，半導體檢測裝置）。電子檢測器116檢測藉由對試樣W照射電子束EB而產生的電子（例如反射電子及散射電子的至少一者。散射電子包含二次電子）。控制裝置4基於電子檢測器116的檢測結果來確定試樣W的狀態。例如，控制裝置4基於電子檢測器116的檢測結果來確定試樣W的表面WSu的三維形狀。再者，本實施形態中，試樣W的表面WSu理想而言為平面，控制裝置4確定包含形成於所述表面WSu的微細凹凸圖案的形狀的、表面WSu的三維形狀。再者，試樣W的表面WSu亦可不為平面。另外，電子檢測器116亦可設於後述的差動排氣系統12。The beam optical system 11 further includes an electron gun 113, an electromagnetic lens 114, an objective lens 115, and an electronic detector 116. The electron gun 113 emits an electron beam EB toward the -Z side. Furthermore, instead of the electron gun 113, a photoelectric conversion surface that emits electrons when irradiated with light may be used. The electromagnetic lens 114 controls the electron beam EB emitted by the electron gun 113. For example, the electromagnetic lens 114 can also control the amount of rotation (ie, the position in the θZ direction) of the image formed by the electron beam EB on a predetermined optical surface (for example, an imaginary surface crossing the optical path of the electron beam EB), and the magnification of the image , And any one of the focus positions corresponding to the imaging position. The objective lens 115 causes the electron beam EB to be at a predetermined reduction magnification on the surface of the sample W (specifically, the surface irradiated by the electron beam EB is directed toward the +Z side and extends along the example shown in FIGS. 1 and 2 XY plane) WSu imaging. The electron detector 116 is a semiconductor-type electron detection device (that is, a semiconductor detection device) using pn-junction or pin-junction semiconductors. The electron detector 116 detects electrons generated by irradiating the sample W with the electron beam EB (for example, at least one of reflected electrons and scattered electrons. The scattered electrons include secondary electrons). The control device 4 determines the state of the sample W based on the detection result of the electronic detector 116. For example, the control device 4 determines the three-dimensional shape of the surface WSu of the sample W based on the detection result of the electronic detector 116. In addition, in this embodiment, the surface WSu of the sample W is ideally flat, and the control device 4 determines the three-dimensional shape of the surface WSu including the shape of the fine uneven pattern formed on the surface WSu. In addition, the surface WSu of the sample W may not be flat. In addition, the electronic detector 116 may be provided in the differential exhaust system 12 described later.
差動排氣系統12具備真空形成構件121以及側壁構件122。側壁構件122為自真空形成構件121向上方延伸的筒狀構件。側壁構件122於內部收容框體111（即，束光學系統11）。側壁構件122於在內部收容有束光學系統11的狀態下與束光學系統11一體化，但亦可為可自束光學系統11分離。真空形成構件121配置於束光學系統11的下方（即，-Z側）。真空形成構件121於束光學系統11的下方，連接（即，連結）於束光學系統11。真空形成構件121連接於束光學系統11而與束光學系統11一體化，但亦可為可分離。於真空形成構件121的內部形成有束通過空間SPb2。再者，圖3表示真空形成構件121具有下述結構的例子，即，將形成有作為束通過空間SPb2的一部分的束通過空間SPb2-1的真空形成構件121-1、形成有作為束通過空間SPb2的一部分的束通過空間SPb2-2的真空形成構件121-2、及形成有作為束通過空間SPb2的一部分的束通過空間SPb2-3的真空形成構件121-3，以束通過空間SPb2-1～束通過空間SPb2-3連通的方式積層，但真空形成構件121的結構不限定於該例子。束通過空間SPb2經由形成於真空形成構件121的上表面（圖3所示的例子中，為真空形成構件121-3的+Z側的面）的束射出口（即，開口）1231，與束光學系統11的束通過空間SPb1連通。束通過空間SPb2與束通過空間SPb1一併藉由真空泵51進行排氣（即，進行減壓）。因此，束通過空間SPb2在照射電子束EB的期間中成為真空空間。束通過空間SPb2被用作來自束通過空間SPb1的電子束EB通過的空間。為了防止通過束通過空間SPb1及束通過空間SPb2的至少一者的電子束EB通過真空形成構件121及側壁構件122的至少一者（即，向差動排氣系統12的外部漏出），及/或為了防止束照射裝置1的外部的磁場（所謂干擾磁場）對通過束通過空間SPb1及束通過空間SPb2的至少一者的電子束EB造成影響，真空形成構件121及側壁構件122的至少一者亦可由高磁導率材料構成。再者，束通過空間SPb2亦可於不照射電子束EB的期間中成為真空空間。The differential exhaust system 12 includes a vacuum forming member 121 and a side wall member 122. The side wall member 122 is a cylindrical member extending upward from the vacuum forming member 121. The side wall member 122 accommodates the housing 111 (that is, the beam optical system 11) inside. The side wall member 122 is integrated with the beam optical system 11 in a state where the beam optical system 11 is housed inside, but it may be detachable from the beam optical system 11. The vacuum forming member 121 is arranged below the beam optical system 11 (that is, the -Z side). The vacuum forming member 121 is connected (ie, connected) to the beam optical system 11 below the beam optical system 11. The vacuum forming member 121 is connected to the beam optical system 11 and integrated with the beam optical system 11, but it may be detachable. A beam passing space SPb2 is formed inside the vacuum forming member 121. 3 shows an example in which the vacuum forming member 121 has a structure in which the vacuum forming member 121-1 formed with the beam passing space SPb2-1 as a part of the beam passing space SPb2 and the beam passing space are formed The beam forming space 121-2 of the beam passing space SPb2-2 as a part of SPb2 and the vacuum forming member 121-3 formed with the beam passing space SPb2-3 as a part of the beam passing space SPb2 to pass the beam passing space SPb2-1 ~ The beams are stacked so as to communicate through the space SPb2-3, but the structure of the vacuum forming member 121 is not limited to this example. The beam passing space SPb2 passes through the beam exit (i.e., opening) 1231 formed on the upper surface of the vacuum forming member 121 (in the example shown in FIG. 3, the surface on the +Z side of the vacuum forming member 121-3), and the beam The beam of the optical system 11 communicates through the space SPb1. The beam passing space SPb2 and the beam passing space SPb1 are evacuated (ie, decompressed) by the vacuum pump 51. Therefore, the beam passage space SPb2 becomes a vacuum space while the electron beam EB is irradiated. The beam passing space SPb2 is used as a space through which the electron beam EB from the beam passing space SPb1 passes. To prevent the electron beam EB passing through at least one of the beam passing space SPb1 and the beam passing space SPb2 from passing through at least one of the vacuum forming member 121 and the side wall member 122 (ie, leaking to the outside of the differential exhaust system 12), and/or Or in order to prevent the external magnetic field (so-called interference magnetic field) of the beam irradiation device 1 from affecting the electron beam EB passing through at least one of the beam passing space SPb1 and the beam passing space SPb2, at least one of the vacuum forming member 121 and the side wall member 122 It can also be made of high permeability materials. In addition, the beam passing space SPb2 may be a vacuum space while the electron beam EB is not irradiated.
真空形成構件121更具備與試樣W的表面WSu可相向的射出面121LS。圖3所示的例子中，真空形成構件121-1具備射出面121LS。束照射裝置1是以射出面121LS與表面WSu之間的間隔D（即，Z軸方向上的束照射裝置1與試樣W之間的間隔D）成為所需間隔D_target（例如10 μm以下且1 μm以上）的方式，藉由後述的間隔調整系統14相對於試樣W而對位。再者，間隔D和Z軸方向上的射出面121LS與表面WSu之間的距離及Z軸方向上的射出面121LS的位置與表面WSu的位置之差分別等價。間隔D亦可稱為射出面121LS與表面WSu的Z軸方向上的距離。於射出面121LS形成有束射出口（即，開口）1232。再者，真空形成構件121亦可不具備與試樣W的表面WSu可相向的射出面121LS。如圖2所示，束通過空間SPb2經由束射出口1232而與真空形成構件121的外部的束通過空間SPb3連通。即，束通過空間SPb1經由束通過空間SPb2而與束通過空間SPb3連通。然而，亦可不確保束通過空間SPb2。即，束通過空間SPb1亦可不經由束通過空間SPb2而與束通過空間SPb3直接連通。束通過空間SPb3為試樣W上的局部空間。束通過空間SPb3為電子束EB於束照射裝置1與試樣W之間（具體而言，射出面121LS與表面WSu之間）通過的局部空間。束通過空間SPb3為至少面向（或者覆蓋或接觸）試樣W的表面WSu中由電子束EB照射的照射區域空間。束通過空間SPb3與束通過空間SPb1及束通過空間SPb2一併藉由真空泵51進行排氣（即，進行減壓）。於該情形時，束通過空間SPb1及束通過空間SPb2各自亦可作為將束通過空間SPb3與真空泵51連接以將束通過空間SPb3排氣的排氣通路（即，管路）發揮功能。因此，束通過空間SPb3在照射電子束EB的期間中成為真空空間。因此，自電子槍113發射的電子束EB經由均為真空空間的束通過空間SPb1～束通過空間SPb3的至少一部分而照射於試樣W。再者，束通過空間SPb3亦可於不照射電子束EB的期間中成為真空空間。The vacuum forming member 121 further includes an emission surface 121LS that can face the surface WSu of the sample W. In the example shown in FIG. 3, the vacuum forming member 121-1 includes an exit surface 121LS. The beam irradiation device 1 is such that the interval D between the emission surface 121LS and the surface WSu (that is, the interval D between the beam irradiation device 1 and the sample W in the Z-axis direction) becomes the desired interval D_target (for example, 10 μm or less and 1 μm or more), the position adjustment system 14 described later is positioned relative to the sample W. Furthermore, the distance D and the distance between the emission surface 121LS in the Z-axis direction and the surface WSu and the difference between the position of the emission surface 121LS in the Z-axis direction and the position of the surface WSu are respectively equivalent. The interval D may also be referred to as the distance in the Z-axis direction between the emission surface 121LS and the surface WSu. A beam exit (ie, opening) 1232 is formed on the exit surface 121LS. Furthermore, the vacuum forming member 121 may not include the emission surface 121LS that can face the surface WSu of the sample W. As shown in FIG. 2, the beam passage space SPb2 communicates with the beam passage space SPb3 outside the vacuum forming member 121 via the beam exit 1232. That is, the beam passage space SPb1 communicates with the beam passage space SPb3 via the beam passage space SPb2. However, the beam passing space SPb2 may not be secured. That is, the beam passage space SPb1 may directly communicate with the beam passage space SPb3 without passing through the beam passage space SPb2. The beam passing space SPb3 is a local space on the sample W. The beam passing space SPb3 is a local space where the electron beam EB passes between the beam irradiation device 1 and the sample W (specifically, between the emission surface 121LS and the surface WSu). The beam passing space SPb3 is an irradiation area space at least facing (or covering or contacting) the surface WSu of the sample W irradiated with the electron beam EB. The beam passing space SPb3 is exhausted (that is, decompressed) by the vacuum pump 51 together with the beam passing space SPb1 and the beam passing space SPb2. In this case, each of the beam passing space SPb1 and the beam passing space SPb2 may also function as an exhaust path (ie, a pipe) that connects the beam passing space SPb3 to the vacuum pump 51 to exhaust the beam passing space SPb3. Therefore, the beam passage space SPb3 becomes a vacuum space while the electron beam EB is irradiated. Therefore, the electron beam EB emitted from the electron gun 113 is irradiated to the sample W through at least a part of the beam passage space SPb1 to SPb3 which are all vacuum spaces. In addition, the beam passage space SPb3 may be a vacuum space while the electron beam EB is not irradiated.
束通過空間SPb3處於較束通過空間SPb1及束通過空間SPb2更為遠離真空泵51的位置。束通過空間SPb2位於較束通過空間SPb1更為遠離真空泵51的位置。因此，束通過空間SPb3的真空度有低於束通過空間SPb1及束通過空間SPb2的真空度的可能性，且束通過空間SPb2的真空度有低於束通過空間SPb1的真空度的可能性。再者，本實施形態中的「空間B的真空度低於空間A的真空度」的狀態是指「空間B的壓力高於空間A的壓力」。於該情形時，真空泵51具有下述程度的排氣能力：可將有真空度變得最低的可能性的束通過空間SPb3的真空度，設為不妨礙電子束EB向試樣W的適當照射的真空度。作為一例，真空泵51亦可具有可將束通過空間SPb3的壓力（即，氣壓）維持於1×10-3
Pa以下（例如以大致1×10-3
Pa～1×10-4
Pa的級別維持）的程度的排氣能力。作為此種真空泵51，例如亦可使用：將用作主泵的渦輪分子泵（或包含擴散泵、低溫泵及濺射離子泵的至少一個的其他種類的高真空用泵）與用作輔助泵的乾式泵（或其他種類的低真空用泵）組合而成的真空泵。再者，真空泵51亦可為可將束通過空間SPb3的壓力（即，氣壓）維持於1×10-3
Pa以下的程度的排氣速度[m3
/s]。The beam passing space SPb3 is located farther from the vacuum pump 51 than the beam passing space SPb1 and the beam passing space SPb2. The beam passing space SPb2 is located farther from the vacuum pump 51 than the beam passing space SPb1. Therefore, the vacuum degree of the beam passing space SPb3 may be lower than the vacuum degree of the beam passing space SPb1 and the beam passing space SPb2, and the vacuum degree of the beam passing space SPb2 may be lower than the vacuum degree of the beam passing space SPb1. In addition, the state of "the vacuum degree of the space B is lower than the vacuum degree of the space A" in this embodiment means "the pressure of the space B is higher than the pressure of the space A". In this case, the vacuum pump 51 has an evacuation capacity such that the vacuum degree of the beam passing space SPb3 with the possibility of the vacuum degree being the lowest can be set so as not to hinder proper irradiation of the sample W with the electron beam EB The degree of vacuum. As an example, the vacuum pump 51 may also be capable of maintaining the pressure (ie, air pressure) of the beam passing space SPb3 below 1×10 -3 Pa (for example, at a level of approximately 1×10 -3 Pa to 1×10 -4 Pa ) Degree of exhaust capacity. As such a vacuum pump 51, for example, a turbo molecular pump used as a main pump (or another type of high vacuum pump including at least one of a diffusion pump, a cryopump, and a sputter ion pump) and an auxiliary pump can also be used The vacuum pump is a combination of dry pumps (or other types of low vacuum pumps). In addition, the vacuum pump 51 may be an exhaust rate [m 3 /s] that can maintain the pressure (that is, the air pressure) of the beam passing space SPb3 to a level of about 1×10 −3 Pa or less.
然而，束通過空間SPb3並非如束通過空間SPb1及束通過空間SPb2般周圍由某些構件（具體而言，框體111及真空形成構件121）包圍的封閉空間。即，束通過空間SPb3為周圍未由某些構件包圍的開放空間。因此，即便束通過空間SPb3藉由真空泵51進行減壓，氣體亦自束通過空間SPb3的周圍流入至束通過空間SPb3中。其結果，有束通過空間SPb3的真空度降低的可能性。因此，差動排氣系統12於束照射裝置1與試樣W之間進行差動排氣，由此維持束通過空間SPb3的真空度。即，差動排氣系統12於束照射裝置1與試樣W之間進行差動排氣，由此於束照射裝置1與試樣W之間形成與周圍相比較而經維持相對較高的真空度的局部的真空區域VSP，使局部的真空區域VSP包含局部的束通過空間SPb3。換言之，差動排氣系統12以局部的束通過空間SPb3包含於局部的真空區域VSP中的方式進行差動排氣。再者，本實施形態中的差動排氣相當於一方面利用下述性質一方面將束通過空間SPb3排氣：於試樣W與束照射裝置1之間，由於試樣W與束照射裝置1之間的間隙的排氣阻力，而維持一個空間（例如束通過空間SPb3）與和一個空間不同的其他空間之間的氣壓差。束通過空間SPb3將試樣W的表面WSu中的至少一部分（例如由電子束EB照射的照射區域）局部地覆蓋，故而真空區域VSP亦將試樣W的表面WSu中的至少一部分（例如由電子束EB照射的照射區域）局部地覆蓋。具體而言，於真空形成構件121的射出面121LS，形成有包圍束射出口1232的排氣槽（即，不貫通真空形成構件121的開口）124。對排氣槽124經由配管（即，管路）125而連結有真空泵52，所述配管（即，管路）125以與排氣槽124連通的方式形成於真空形成構件121及側壁構件122。配管125的第一端（即，其中一個端部）連接於真空泵52，配管125的第二端（即，另一個端部，實質上為形成排氣槽124的部分）和射出面12LS與試樣W的表面WSu之間的空間接觸。再者，圖3表示差動排氣系統12具有將配管125自排氣槽124逐漸彙集直至到達真空泵52的結構的例子。具體而言，圖3表示下述例子：於形成有排氣槽124的真空形成構件121-1中，形成有自環狀的排氣槽124以貫通真空形成構件121-1的方式向上方延伸的環狀的流路125-1，於真空形成構件121-2中，形成有與流路125-1連通的N1根（圖3所示的例子中為4根）配管125-21及將N1根配管125-21彙集的環狀的彙集流路125-22，於真空形成構件121-3中，形成有與彙集流路125-22連通的N2（其中，N2＜N1）根（圖3所示的例子中為2根）配管125-31及將N2根配管125-31彙集的環狀的彙集流路125-32，配管125-4與彙集流路125-32連通，配管125-4連接於真空泵52。再者，此處使配管125-31的根數N2為配管125-21的根數N1的一半，1根配管125-31位於距和其連通的2根配管125-21大致相等的距離。另外，使配管125-31的根數N2為配管125-4的根數（圖3所示的例子中為1根）的一半，配管125-4位於距和其連通的2根配管125-31大致相等的距離。因此，經由各配管125-21的排氣路徑的長度及壓損大致相等，自排氣槽124排氣的空氣的量不因方位而偏差。然而，配管125的結構不限定於該例子。真空泵52i經由排氣槽124將束通過空間SPb3的周圍空間排氣。其結果，差動排氣系統12可適當維持束通過空間SPb3的真空度。再者，排氣槽124亦可不為連成1個的環狀，亦可為具有多個環的一部分的多個排氣槽。However, the beam passing space SPb3 is not a closed space surrounded by some members (specifically, the frame 111 and the vacuum forming member 121) like the beam passing space SPb1 and the beam passing space SPb2. That is, the beam passing space SPb3 is an open space that is not surrounded by some members. Therefore, even if the beam passing space SPb3 is decompressed by the vacuum pump 51, the gas flows into the beam passing space SPb3 from around the beam passing space SPb3. As a result, there is a possibility that the degree of vacuum in the beam passing space SPb3 is reduced. Therefore, the differential exhaust system 12 performs differential exhaust between the beam irradiation device 1 and the sample W, thereby maintaining the vacuum degree of the beam passing space SPb3. That is, the differential exhaust system 12 performs differential exhaust between the beam irradiation device 1 and the sample W, thereby forming between the beam irradiation device 1 and the sample W a relatively high The partial vacuum region VSP of the degree of vacuum makes the partial vacuum region VSP include the partial beam passage space SPb3. In other words, the differential exhaust system 12 performs differential exhaust such that the local beam passage space SPb3 is included in the local vacuum region VSP. In addition, the differential exhaust in this embodiment corresponds to exhausting the beam through the space SPb3 while utilizing the following properties: between the sample W and the beam irradiation device 1, since the sample W and the beam irradiation device The exhaust resistance of the gap between 1, while maintaining the air pressure difference between a space (for example, beam passing space SPb3) and other spaces different from a space. The beam passing space SPb3 partially covers at least a part of the surface WSu of the sample W (for example, the irradiation area irradiated by the electron beam EB), so the vacuum region VSP also covers at least a part of the surface WSu of the sample W (for example, by the electron The irradiation area irradiated by the beam EB) is partially covered. Specifically, on the emission surface 121LS of the vacuum forming member 121, an exhaust groove (ie, an opening that does not penetrate the vacuum forming member 121) 124 is formed to surround the beam emission port 1232. The vacuum pump 52 is connected to the exhaust groove 124 via a pipe (ie, pipeline) 125 formed on the vacuum forming member 121 and the side wall member 122 so as to communicate with the exhaust groove 124. The first end (i.e., one of the ends) of the piping 125 is connected to the vacuum pump 52, the second end (i.e., the other end, substantially the portion where the exhaust groove 124 is formed) of the piping 125, and the injection surface 12LS and the test The surface W of the sample W is in spatial contact between WSu. In addition, FIG. 3 shows an example in which the differential exhaust system 12 has a structure in which the piping 125 is gradually collected from the exhaust tank 124 until it reaches the vacuum pump 52. Specifically, FIG. 3 shows an example in which the vacuum forming member 121-1 in which the exhaust groove 124 is formed has a self-ring-shaped exhaust groove 124 extending upward so as to penetrate the vacuum forming member 121-1 The annular flow path 125-1 is formed in the vacuum forming member 121-2 with N1 (four in the example shown in FIG. 3) communicating with the flow path 125-1. An annular collecting flow path 125-22 where the root pipes 125-21 are collected is formed in the vacuum forming member 121-3 with N2 (where N2<N1) roots (shown in FIG. 3) communicating with the collecting flow path 125-22 In the example shown, two pipes 125-31 and an annular collecting flow path 125-32 that collects N2 pipes 125-31, the pipe 125-4 communicates with the collecting flow path 125-32, and the pipe 125-4 is connected于 Vacuum pump 52. Here, the number N2 of the pipes 125-31 is half of the number N1 of the pipes 125-21, and one pipe 125-31 is located at a substantially equal distance from the two pipes 125-21 communicating therewith. In addition, the number N2 of the pipes 125-31 is half of the number of the pipes 125-4 (one in the example shown in FIG. 3), and the pipe 125-4 is located at a distance from the two pipes 125-31 communicating with it Roughly equal distance. Therefore, the length and pressure loss of the exhaust path through each pipe 125-21 are substantially equal, and the amount of air exhausted from the exhaust groove 124 does not vary depending on the orientation. However, the structure of the piping 125 is not limited to this example. The vacuum pump 52i exhausts the space around the beam passage space SPb3 via the exhaust groove 124. As a result, the differential exhaust system 12 can appropriately maintain the vacuum degree of the beam passage space SPb3. In addition, the exhaust groove 124 may not be a ring shape connected to one, and may be a plurality of exhaust grooves having a part of a plurality of rings.
回到圖2，真空泵52主要是為了相對提高束通過空間SPb3的真空度，且為了將束通過空間SPb3的周圍的局部空間排氣而使用。因此，真空泵52亦可具有可維持較真空泵51所維持的真空度更低的真空度的程度的排氣能力。即，真空泵52的排氣能力亦可低於真空泵51的排氣能力。例如，真空泵52亦可為包含乾式泵（或其他種類的低真空用泵）且另一方面不含渦輪分子泵（或其他種類的高真空用泵）的真空泵。於該情形時，藉由真空泵52進行減壓的排氣槽124及配管125內的空間的真空度亦可低於藉由真空泵51進行減壓的束照射空間SPb1～束照射空間SPb3的真空度。再者，真空泵52亦可為可維持較真空泵51所維持的真空度更低的真空度的程度的排氣速度[m3
/s]。Returning to FIG. 2, the vacuum pump 52 is mainly used to relatively increase the vacuum degree of the beam passage space SPb3 and is used to exhaust the partial space around the beam passage space SPb3. Therefore, the vacuum pump 52 may also have an exhaust capability that can maintain a vacuum degree lower than that maintained by the vacuum pump 51. That is, the exhaust capacity of the vacuum pump 52 may be lower than the exhaust capacity of the vacuum pump 51. For example, the vacuum pump 52 may also be a vacuum pump that includes a dry pump (or other kind of low vacuum pump) and on the other hand does not include a turbo molecular pump (or other kind of high vacuum pump). In this case, the vacuum degree of the space in the exhaust groove 124 and the piping 125 decompressed by the vacuum pump 52 may be lower than the vacuum degree of the beam irradiation space SPb1 to the beam irradiation space SPb3 decompressed by the vacuum pump 51 . In addition, the vacuum pump 52 may be an exhaust rate [m 3 /s] that can maintain a vacuum degree lower than that maintained by the vacuum pump 51.
如此，於束通過空間SPb3中形成有局部的真空區域VSP，另一方面，試樣W的表面WSu中不面向束通過空間SPb3的部分（尤其是遠離束通過空間SPb3的部分）的至少一部分亦可由較真空區域VSP而真空度更低的非真空區域覆蓋。典型而言，試樣W的表面WSu中不面向束空間SPb3的部分的至少一部分亦可處於大氣壓環境下。即，試樣W的表面WSu中不面向束通過空間SPb3的部分的至少一部分亦可由大氣壓區域覆蓋。具體而言，差動排氣系統12於包含束通過空間SPb3的空間SP1（參照圖2）中形成真空區域VSP。該空間SP1例如包含與束射出口1232及排氣槽124的至少一個接觸的空間。空間SP1包含面向（即，接觸）試樣W的表面WSu中位於束射出口1232及排氣槽124的至少一個的正下方的部分的空間。另一方面，於空間SP1的周圍的空間SP2（即，於空間SP1的周圍連接於空間SP1（例如，以流體方式連接）的空間SP2，參照圖2）中，未形成真空區域VSP。即，空間SP2成為壓力高於空間SP1的空間。該空間SP2例如包含遠離束射出口1232及排氣槽124的空間。空間SP2例如包含面向試樣W的表面WSu中與空間SP1所面向的部分不同的部分的空間。空間SP2包含不經由空間SP1的情況下無法連接於束射出口1232及排氣槽124（進而，束通過空間SPb2及配管125）的空間。空間SP2包含若經由空間SP1則可連接於束射出口1232及排氣槽124（進而，束通過空間SPb2及配管125）的空間。由於空間SP2的壓力高於空間SP1的壓力，故而有氣體自空間SP2向空間SP1流入的可能性，但自空間SP2向空間SP1流入的氣體經由排氣槽124（進而，束射出口1232）而自空間SP1排出。即，自空間SP2向空間SP1流入的氣體經由配管125（進而，束通過空間SPb2）而自空間SP1排出。因此，維持形成於空間SP1中的真空區域VSP的真空度。因此，局部地形成有真空區域VSP的狀態亦可意指於試樣W的表面WSu上局部地形成有真空區域VSP的狀態（即，於沿著試樣W的表面WSu的方向上局部地形成有真空區域VSP的狀態）。In this way, a partial vacuum region VSP is formed in the beam passing space SPb3. On the other hand, at least a part of the portion W of the surface WSu of the sample W that does not face the beam passing space SPb3 (particularly away from the beam passing space SPb3) It can be covered by a non-vacuum area with a lower vacuum than the vacuum area VSP. Typically, at least a part of the portion W of the surface WSu of the sample W that does not face the beam space SPb3 may also be in an atmospheric pressure environment. That is, at least a part of the portion of the surface WSu of the sample W that does not face the beam passage space SPb3 may be covered by the atmospheric pressure region. Specifically, the differential exhaust system 12 forms a vacuum region VSP in the space SP1 (see FIG. 2) including the beam passing space SPb3. This space SP1 includes, for example, a space in contact with at least one of the beam exit 1232 and the exhaust groove 124. The space SP1 includes a space of a portion of the surface WSu facing (that is, in contact with) the sample W directly below at least one of the beam exit 1232 and the exhaust groove 124. On the other hand, in the space SP2 around the space SP1 (that is, the space SP2 connected to the space SP1 (for example, fluidly connected) around the space SP1, refer to FIG. 2 ), the vacuum region VSP is not formed. That is, the space SP2 becomes a space with a higher pressure than the space SP1. This space SP2 includes, for example, a space away from the beam exit 1232 and the exhaust groove 124. The space SP2 includes, for example, a space in a portion of the surface WSu facing the sample W that is different from the portion facing the space SP1. The space SP2 includes a space that cannot be connected to the beam exit 1232 and the exhaust groove 124 (and further, the beam passes through the space SPb2 and the piping 125) without passing through the space SP1. The space SP2 includes a space that can be connected to the beam exit 1232 and the exhaust groove 124 (and further, the beam passing space SPb2 and the pipe 125) when passing through the space SP1. Since the pressure of the space SP2 is higher than the pressure of the space SP1, there is a possibility that gas flows from the space SP2 to the space SP1, but the gas flowing from the space SP2 to the space SP1 passes through the exhaust groove 124 (and further, the beam exit 1232). Discharge from space SP1. That is, the gas flowing from the space SP2 to the space SP1 is discharged from the space SP1 via the pipe 125 (and further, the beam passes through the space SPb2). Therefore, the vacuum degree of the vacuum region VSP formed in the space SP1 is maintained. Therefore, the state where the vacuum region VSP is locally formed may also mean a state where the vacuum region VSP is locally formed on the surface WSu of the sample W (that is, partially formed in the direction along the surface WSu of the sample W There is a state of vacuum area VSP).
再次於圖1中，平台裝置2配置於束照射裝置1的下方（即，-Z側）。平台裝置2具備壓盤21以及平台22。壓盤21配置於地面等支持面SF上。平台22配置於壓盤21上。於平台22與壓盤21之間，設置有用以防止壓盤21的振動向平台22傳遞的未圖示的防振裝置。平台22保持試樣W。為了保持試樣W，平台22如圖4（a）～圖4（c）所示，具備保持構件221及外周構件222。In FIG. 1 again, the platform device 2 is disposed below the beam irradiation device 1 (that is, on the -Z side). The platform device 2 includes a platen 21 and a platform 22. The pressure plate 21 is arranged on the supporting surface SF such as the ground. The platform 22 is arranged on the platen 21. An anti-vibration device (not shown) that prevents vibration of the pressure plate 21 from being transmitted to the platform 22 is provided between the platform 22 and the pressure plate 21. The platform 22 holds the sample W. In order to hold the sample W, as shown in FIGS. 4( a) to 4 (c ), the stage 22 includes a holding member 221 and an outer peripheral member 222.
保持構件221為沿XY平面延伸的平板狀的（或其他任意形狀的）構件。保持構件221具備與束照射裝置1可相向的保持面HS。圖4（a）～圖4（c）所示的例子中，保持面HS為朝向+Z側（即，上方）的面。沿著XY平面的方向上的保持面HS的尺寸大於沿著XY平面的方向上的試樣W的尺寸，但亦可相同。圖4（a）～圖4（c）所示的例子中，試樣W於俯視時具有圓形的形狀，故而保持面HS於俯視時為圓形形狀。再者，於試樣W於俯視時為矩形形狀的情形時，保持面HS於俯視時亦可為矩形形狀。圖4（a）～圖4（c）所示的例子中，保持面HS的直徑大於試樣W的直徑。保持面HS為保持試樣W的面。即，保持構件221以保持面HS保持試樣W。例如，保持構件221亦可藉由經由形成於保持面HS的排氣口真空吸附試樣W的背面（即，與表面WSu相反之側的面，於圖4（a）～圖4（c）所示的例子中，為朝向-Z側（即，下方）的面），而保持試樣W。於該情形時，保持構件221亦可含有真空吸盤。或者，例如保持構件221亦可藉由經由配置於保持構件221的電極來靜電吸附保持面HS上所配置的試樣W，而保持試樣W。於該情形時，保持構件221亦可包含靜電吸盤。The holding member 221 is a plate-shaped (or other arbitrary shape) member extending along the XY plane. The holding member 221 includes a holding surface HS that can face the beam irradiation device 1. In the examples shown in FIGS. 4( a) to 4 (c ), the holding surface HS is a surface facing the +Z side (that is, upward). The size of the holding surface HS in the direction along the XY plane is larger than the size of the sample W in the direction along the XY plane, but they may be the same. In the examples shown in FIGS. 4( a) to 4 (c ), the sample W has a circular shape in plan view, so the holding surface HS has a circular shape in plan view. In addition, when the sample W has a rectangular shape in plan view, the holding surface HS may have a rectangular shape in plan view. In the examples shown in FIGS. 4( a) to 4 (c ), the diameter of the holding surface HS is larger than the diameter of the sample W. The holding surface HS is a surface holding the sample W. That is, the holding member 221 holds the sample W on the holding surface HS. For example, the holding member 221 may vacuum suction the back surface of the sample W (that is, the surface opposite to the surface WSu through the exhaust port formed on the holding surface HS, as shown in FIGS. 4(a) to 4(c) In the example shown, the sample W is held toward the -Z side (that is, the surface below). In this case, the holding member 221 may also contain a vacuum chuck. Alternatively, for example, the holding member 221 may hold the sample W by electrostatically attracting the sample W disposed on the holding surface HS through the electrodes disposed on the holding member 221. In this case, the holding member 221 may also include an electrostatic chuck.
外周構件222於XY平面內配置於保持構件221的周圍。外周構件222於XY平面內以包圍保持構件221的方式配置。圖4（a）～圖4（c）所示的例子中，試樣W於俯視時為圓形形狀，故而外周構件222的內側的輪廓亦可為圓狀。外周構件222與保持構件221一體化，但亦可為與保持構件221分立的構件。外周構件222為以較保持構件221更向上方（即，+Z側）突出的方式形成的構件。因此，外周構件222亦可謂實質上自保持構件221的保持面HS向上方（即，+Z側）突出的構件。外周構件222的上表面（具體而言，與保持面HS朝向同側的面，於圖4（a）～圖4（c）所示的例子中，為+Z側的面）OS位於較保持構件221的保持面HS更靠上方。具體而言，外周構件222的上表面OS相較於保持構件221的保持面HS，以試樣W的厚度Wh而位於上方。因此，外周構件222的上表面OS位於與保持構件221所保持的試樣W的表面WSu相同的高度。即，外周構件222的上表面OS與保持構件221所保持的試樣W的表面WSu位於相同平面內。因此，於平台22中形成有由保持構件221及外周構件222所包圍的凹部狀的收容空間SPw。試樣W於收容於該收容空間SPw中且表面WSu位於與外周構件222的上表面OS相同高度的狀態下由保持構件221所保持。再者，收容空間SPw於俯視時亦可為圓形形狀。The outer peripheral member 222 is arranged around the holding member 221 in the XY plane. The outer peripheral member 222 is arranged in the XY plane so as to surround the holding member 221. In the examples shown in FIGS. 4( a) to 4 (c ), the sample W has a circular shape when viewed from above, so the inner contour of the outer peripheral member 222 may be circular. The outer peripheral member 222 is integrated with the holding member 221, but may be a member separate from the holding member 221. The outer peripheral member 222 is a member formed to protrude upward (ie, +Z side) from the holding member 221. Therefore, the outer peripheral member 222 can also be said to substantially protrude upward (ie, +Z side) from the holding surface HS of the holding member 221. The upper surface of the outer peripheral member 222 (specifically, the surface facing the same side as the holding surface HS is the surface on the +Z side in the examples shown in FIGS. 4(a) to 4(c)). The holding surface HS of the member 221 is further upward. Specifically, the upper surface OS of the outer peripheral member 222 is positioned above the holding surface HS of the holding member 221 by the thickness Wh of the sample W. Therefore, the upper surface OS of the outer peripheral member 222 is located at the same height as the surface WSu of the sample W held by the holding member 221. That is, the upper surface OS of the outer peripheral member 222 and the surface WSu of the sample W held by the holding member 221 are in the same plane. Therefore, the platform 22 is formed with a concave-shaped storage space SPw surrounded by the holding member 221 and the outer peripheral member 222. The sample W is held by the holding member 221 in a state where the surface WSu is stored in the storage space SPw and the surface WSu is at the same height as the upper surface OS of the outer peripheral member 222. Furthermore, the storage space SPw may have a circular shape when viewed from above.
外周構件222包含於沿著XY平面的一個方向上與保持構件221鄰接的退避構件223作為外周構件222的一部分。再者，於如上所述般外周構件222為與保持構件221分立的構件的情形時，相當於外周構件222的一部分的退避構件223亦另可為與保持構件221分立的構件。再者，即便於外周構件222為與保持構件221相同的構件的情形時，退避構件223亦可為與保持構件221分立的構件。退避構件223於XY平面內中向遠離保持構件221的方向擴展。退避構件223的尺寸（具體而言，遠離保持構件221的方向上的尺寸）亦可較外周構件222中於與一個方向不同的其他方向上與保持構件221鄰接的部分的尺寸更大。即，外周構件222亦可具有下述結構：於XY平面內中，自保持構件221觀看而位於一個方向的部分（即，退避構件223）與自保持構件221觀看而位於與一個方向不同的其他方向的部分相比，相對更多地向外側擴展（即，以遠離保持構件221的方式擴展）。圖4（a）～圖4（c）所示的例子中，外周構件222包含沿Y軸方向與保持構件221鄰接（尤其是於較保持構件221更靠-Y側與保持構件221鄰接）的退避構件223。因此，退避構件223的沿著Y軸的尺寸亦可較外周構件222中於+Y側與保持構件221鄰接的部分的、沿著Y軸的尺寸更大，且亦可較於外周構件222中於+X側或-X側與保持構件221鄰接的部分的、沿著X軸的尺寸更大。退避構件223為外周構件222的一部分，故而退避構件223的上表面ES相當於外周構件222的上表面OS的一部分。因此，退避構件223的上表面ES亦可與外周構件222的上表面OS同樣地，位於與保持構件221保持的試樣W的表面WSu相同的高度。再者，關於形成有該退避構件223的技術原因，將於下文中詳述（參照圖5（a）以後）。再者，亦可於退避構件223的上表面ES的一部分，設置用以使由束照射裝置1所得的電子束EB的位置、與平台22的位置（XYZ方向上的位置）相關聯的標記。再者，亦可將外周面的上表面OS及退避構件223的上表面ES的至少一者稱為外部面。The outer peripheral member 222 is included in the retraction member 223 adjacent to the holding member 221 in one direction along the XY plane as a part of the outer peripheral member 222. In addition, in the case where the outer peripheral member 222 is a member separate from the holding member 221 as described above, the retraction member 223 corresponding to a part of the outer peripheral member 222 may also be a member separate from the holding member 221. Furthermore, even when the outer peripheral member 222 is the same member as the holding member 221, the retreat member 223 may be a member separate from the holding member 221. The retraction member 223 expands away from the holding member 221 in the XY plane. The size of the retraction member 223 (specifically, the size in the direction away from the holding member 221) may be larger than the size of the portion of the outer peripheral member 222 that is adjacent to the holding member 221 in another direction different from one direction. That is, the outer peripheral member 222 may also have the following structure: in the XY plane, the portion viewed from the holding member 221 and located in one direction (that is, the retreat member 223) and the self-holding member 221 are located in a different direction from the other Compared to the directional portion, it expands relatively more outward (that is, expands away from the holding member 221 ). In the example shown in FIGS. 4( a) to 4 (c ), the outer peripheral member 222 includes abutment with the holding member 221 in the Y-axis direction (especially on the −Y side closer to the holding member 221 than the holding member 221 ). Evacuation member 223. Therefore, the dimension of the retraction member 223 along the Y axis may also be larger than the dimension along the Y axis of the portion of the outer peripheral member 222 adjacent to the holding member 221 on the +Y side, and may also be larger than that of the outer peripheral member 222 The portion adjacent to the holding member 221 on the +X side or -X side has a larger size along the X axis. The retreat member 223 is a part of the outer peripheral member 222, so the upper surface ES of the retreat member 223 corresponds to a part of the upper surface OS of the outer peripheral member 222. Therefore, the upper surface ES of the retreat member 223 may be located at the same height as the surface WSu of the sample W held by the holding member 221, like the upper surface OS of the outer peripheral member 222. In addition, the technical reason for forming the retreat member 223 will be described in detail below (see FIG. 5(a) and later). In addition, a mark may be provided on a part of the upper surface ES of the retreat member 223 to associate the position of the electron beam EB obtained by the beam irradiation device 1 with the position of the stage 22 (position in the XYZ direction). Furthermore, at least one of the upper surface OS of the outer peripheral surface and the upper surface ES of the retreat member 223 may be referred to as an outer surface.
再次於圖1中，平台22於控制裝置4的控制下保持試樣W，於此狀況下可沿著X軸方向、Y軸方向、Z軸方向、θX方向、θY方向及θZ方向的至少一個而移動。為了使平台22移動，平台裝置2具備平台驅動系統23。平台驅動系統23例如使用任意的馬達（例如線性馬達等）使平台22移動。進而，平台裝置2具備計測平台22的位置的位置計測器24。位置計測器24例如包含編碼器及雷射干涉儀中的至少一者。再者，於平台22保持試樣W的情形時，控制裝置4根據平台22的位置而可確定試樣W的位置。In FIG. 1 again, the stage 22 holds the sample W under the control of the control device 4, and in this case, it can follow at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. And move. In order to move the platform 22, the platform device 2 includes a platform drive system 23. The platform driving system 23 uses an arbitrary motor (for example, a linear motor, etc.) to move the platform 22. Furthermore, the platform device 2 includes a position measuring device 24 that measures the position of the platform 22. The position measuring device 24 includes, for example, at least one of an encoder and a laser interferometer. Furthermore, when the platform 22 holds the sample W, the control device 4 can determine the position of the sample W based on the position of the platform 22.
若平台22沿XY平面移動，則沿著XY平面的方向上的試樣W與束照射裝置1的相對位置改變。因此，若平台22沿XY平面移動，則沿著XY平面的方向上的、試樣W與試樣W的表面WSu的電子束EB的照射區域的相對位置改變。即，若平台22沿XY平面移動，則於沿著XY平面的方向（即，沿著試樣W的表面WSu的方向）上，電子束EB的照射區域相對於試樣W的表面WSu而移動。進而，若平台22沿XY平面移動，則沿著XY平面的方向上的、試樣W與束通過空間SPb3及真空區域VSP的相對位置改變。即，若平台22沿XY平面移動，則於沿著XY平面的方向（即，沿著試樣W的表面WSu的方向）上，束通過空間SPb3及真空區域VSP相對於試樣W的表面WSu而移動。控制裝置4亦可控制平台驅動系統23而使平台22沿XY平面移動，以對試樣W的表面WSu的所需位置照射電子束EB且設定束通過空間SPb3（即，形成真空區域VSP）。具體而言，例如，控制裝置4控制平台驅動系統23而使平台22沿XY平面移動，以於試樣W的表面WSu的第一部分形成真空區域VSP。於平台22以於試樣W的表面WSu的第一部分形成真空區域VSP的方式移動之後，束照射裝置1對試樣W的表面WSu的第一部分照射電子束EB，計測第一部分的狀態。於束照射裝置1對試樣W的表面WSu的第一部分照射電子束EB的期間中，平台驅動系統23亦可不使平台22沿XY平面移動。於第一部分的狀態的計測完成之後，控制裝置4控制平台驅動系統23而使平台22沿XY平面移動，以於試樣W的表面WSu的第二部分形成真空區域VSP。於平台22以於試樣W的表面WSu的第二部分形成真空區域VSP的方式移動之後，束照射裝置1對試樣W的表面WSu的第二部分照射電子束EB，計測第二部分的狀態。亦於束照射裝置1對試樣W的表面WSu的第二部分照射電子束EB的期間中，平台驅動系統23亦可不使平台22沿XY平面移動。以後，藉由重覆同樣的動作而計測試樣W的表面WSu的狀態。When the stage 22 moves along the XY plane, the relative position of the sample W and the beam irradiation device 1 in the direction along the XY plane changes. Therefore, when the stage 22 moves along the XY plane, the relative position of the irradiation area of the electron beam EB of the sample W and the surface WSu of the sample W in the direction along the XY plane changes. That is, when the stage 22 moves along the XY plane, the irradiation area of the electron beam EB moves relative to the surface WSu of the sample W in the direction along the XY plane (that is, along the surface WSu of the sample W) . Furthermore, when the stage 22 moves along the XY plane, the relative position of the sample W, the beam passing space SPb3, and the vacuum region VSP in the direction along the XY plane changes. That is, when the stage 22 moves along the XY plane, the beam passing space SPb3 and the vacuum region VSP are relative to the surface WSu of the sample W in the direction along the XY plane (ie, along the surface WSu of the sample W) And move. The control device 4 may also control the stage driving system 23 to move the stage 22 along the XY plane to irradiate the electron beam EB to a desired position on the surface WSu of the sample W and set the beam passing space SPb3 (ie, to form the vacuum region VSP). Specifically, for example, the control device 4 controls the stage driving system 23 to move the stage 22 along the XY plane to form the vacuum region VSP in the first part of the surface WSu of the sample W. After the stage 22 moves so as to form the vacuum region VSP on the first part of the surface WSu of the sample W, the beam irradiation device 1 irradiates the first part of the surface WSu of the sample W with the electron beam EB to measure the state of the first part. While the beam irradiation device 1 is irradiating the first portion of the surface WSu of the sample W with the electron beam EB, the stage driving system 23 may not move the stage 22 along the XY plane. After the measurement of the state of the first part is completed, the control device 4 controls the stage drive system 23 to move the stage 22 along the XY plane to form the vacuum region VSP in the second part of the surface WSu of the sample W. After the stage 22 moves so as to form a vacuum region VSP on the second part of the surface WSu of the sample W, the beam irradiation device 1 irradiates the second part of the surface WSu of the sample W with the electron beam EB to measure the state of the second part . During the period in which the beam irradiation device 1 irradiates the second part of the surface WSu of the sample W with the electron beam EB, the stage driving system 23 may not move the stage 22 along the XY plane. After that, the state of the surface WSu of the test sample W is calculated by repeating the same operation.
若平台22沿Z軸移動，則沿著Z軸的方向上的試樣W與束照射裝置1的相對位置改變。因此，若平台22沿Z軸移動，則沿著Z軸的方向上的、試樣W與電子束EB的聚焦位置的相對位置改變。控制裝置4亦可控制平台驅動系統23而使平台22沿Z軸移動，以於試樣W的表面WSu（或表面WSu的附近）設定電子束EB的聚焦位置。此處，電子束EB的聚焦位置亦可為與束光學系統11的成像位置對應的焦點位置、或電子束EB的模糊最少般的Z軸方向的位置。When the stage 22 moves along the Z axis, the relative position of the sample W and the beam irradiation device 1 in the direction along the Z axis changes. Therefore, when the stage 22 moves along the Z axis, the relative position of the focus position of the sample W and the electron beam EB in the direction along the Z axis changes. The control device 4 may also control the platform driving system 23 to move the platform 22 along the Z axis to set the focus position of the electron beam EB on the surface WSu (or near the surface WSu) of the sample W. Here, the focus position of the electron beam EB may be a focus position corresponding to the imaging position of the beam optical system 11 or a position in the Z-axis direction where the electron beam EB is least blurred.
進而，若平台22沿Z軸移動，則試樣W與束照射裝置1之間的間隔D改變。因此，平台驅動系統23亦可於控制裝置4的控制下，一方面與後述的間隔調整系統14協調，一方面以間隔D成為所需間隔D_target的方式使平台22移動。此時，控制裝置4基於位置計測裝置24的計測結果（進而，後述的計測束照射裝置1的位置（尤其是真空形成構件121的位置）的、位置計測裝置15的計測結果）來確定實際的間隔D，並且以所確定的間隔D成為所需間隔D_target的方式來控制平台驅動系統23及間隔調整系統14的至少一者。因此，位置計測裝置15及位置計測裝置24亦可作為檢測間隔D的檢測裝置而發揮功能。再者，於試樣W的Z軸方向的厚度（尺寸）已知的情形時，控制裝置4亦可代替實際的間隔D/或除此以外，使用和束照射裝置1與基準面（例如基準板的表面）的Z軸方向上的距離有關的資訊、及和試樣W的Z軸方向的厚度（尺寸）有關的資訊，以使束照射裝置1至試樣W的距離成為目標距離的方式，控制平台驅動系統23及間隔調整系統14中的至少一者。Furthermore, when the stage 22 moves along the Z axis, the distance D between the sample W and the beam irradiation device 1 changes. Therefore, the platform driving system 23 can also coordinate with the interval adjustment system 14 described later under the control of the control device 4 and move the platform 22 so that the interval D becomes the desired interval D_target. At this time, the control device 4 determines the actual measurement result based on the measurement result of the position measurement device 24 (furthermore, the measurement result of the position measurement device 15 for measuring the position of the beam irradiation device 1 (especially the position of the vacuum forming member 121 described later)). The interval D, and at least one of the platform driving system 23 and the interval adjustment system 14 is controlled so that the determined interval D becomes the desired interval D_target. Therefore, the position measurement device 15 and the position measurement device 24 can also function as a detection device that detects the interval D. Furthermore, when the thickness (dimension) of the sample W in the Z-axis direction is known, the control device 4 may replace the actual interval D/or use the beam irradiation device 1 and the reference plane (eg, reference plate) Surface) information about the distance in the Z-axis direction and information about the thickness (dimension) of the sample W in the Z-axis direction so that the distance from the beam irradiation device 1 to the sample W becomes the target distance, At least one of the control platform driving system 23 and the interval adjustment system 14.
支持架3支持束照射裝置1。具體而言，支持架3具備支持腿31以及支持構件32。支持腿31配置於支持面SF上。亦可於支持腿31與支持面SF之間，設置有用於防止、或用於減少支持面SF的振動向支持腿31傳遞的、未圖示的防振裝置。支持腿31例如為自支持面SF向上方延伸的構件。支持腿31對支持構件32進行支持。支持構件32為於俯視時於中心形成有開口321的環狀的板構件。於支持構件32的上表面，經由間隔調整系統14而連結有自束照射裝置1的外表面（圖1～圖3所示的例子中，為差動排氣系統12所具備的側壁構件122的外表面）向外側延伸的凸緣構件13的下表面。此時，束照射裝置1以貫通開口321的方式配置。其結果，支持架3能以自支持構件32的上表面抬起的方式支持束照射裝置1。然而，支持架3只要可支持束照射裝置1，則亦可利用與圖1所示的支持方法不同的其他支持方法來支持束照射裝置1。例如，支持架3亦能以自支持構件32的下表面懸吊的方式支持束照射裝置1。再者，亦可於支持腿31與支持構件32之間，設有用以防止或減少支持面SF的振動向支持構件32傳遞的、未圖示的防振裝置。The support frame 3 supports the beam irradiation device 1. Specifically, the support frame 3 includes a support leg 31 and a support member 32. The support leg 31 is arranged on the support surface SF. An anti-vibration device (not shown) for preventing or reducing the transmission of the vibration of the support surface SF to the support leg 31 may be provided between the support leg 31 and the support surface SF. The support leg 31 is, for example, a member extending upward from the support surface SF. The support leg 31 supports the support member 32. The support member 32 is an annular plate member with an opening 321 formed in the center in a plan view. On the upper surface of the support member 32, the outer surface of the self-beam irradiation device 1 is connected via the interval adjustment system 14 (in the example shown in FIGS. 1 to 3, it is a side wall member 122 provided in the differential exhaust system 12 Outer surface) The lower surface of the flange member 13 extending outward. At this time, the beam irradiation device 1 is arranged so as to penetrate the opening 321. As a result, the support frame 3 can support the beam irradiation device 1 so as to be lifted from the upper surface of the support member 32. However, as long as the support frame 3 can support the beam irradiation device 1, it is also possible to support the beam irradiation device 1 by another support method different from the support method shown in FIG. For example, the support frame 3 can also support the beam irradiation device 1 by being suspended from the lower surface of the support member 32. Furthermore, an anti-vibration device (not shown) may be provided between the support leg 31 and the support member 32 to prevent or reduce the vibration of the support surface SF from being transmitted to the support member 32.
間隔調整系統14藉由使束照射裝置1至少沿Z軸移動，而調整真空形成構件121的射出面121LS與試樣W的表面WSu之間的間隔D、或自真空形成構件121的射出面121LS至試樣W的表面WSu為止的Z軸方向的距離。例如，間隔調整系統14亦可使束照射裝置1沿Z軸方向移動，以使間隔D成為所需間隔D_target。作為此種間隔調整系統14，例如可使用下述驅動系統的至少一個：使用馬達的驅動力來使束照射裝置1移動的驅動系統、使用藉由壓電元件的壓電效應所產生的力來使束照射裝置1移動的驅動系統、使用庫倫力（例如於至少兩個電極間產生的靜電力）使束照射裝置1移動的驅動系統、及使用勞倫茲力（例如於線圈與磁極之間產生的電磁力）使束照射裝置1移動的驅動系統。然而，於將射出面121LS與表面WSu之間的間隔D直接固定即可的情形時，亦可代替間隔調整系統14，而將填隙片（shim）等間隔調整構件配置於支持構件32與凸緣構件13之間。再者，於該情形時，填隙片等間隔調整構件亦可不配置於支持構件32與凸緣構件13之間。另外，束照射裝置1亦可為沿XY方向而可移動。The interval adjustment system 14 adjusts the interval D between the emission surface 121LS of the vacuum forming member 121 and the surface WSu of the sample W, or the emission surface 121LS from the vacuum forming member 121 by moving the beam irradiation device 1 at least along the Z axis. The distance in the Z-axis direction from the surface WSu of the sample W. For example, the interval adjustment system 14 may also move the beam irradiation device 1 in the Z-axis direction so that the interval D becomes the desired interval D_target. As such an interval adjustment system 14, for example, at least one of the following drive systems can be used: a drive system that uses the driving force of the motor to move the beam irradiation device 1 and a force that is generated by the piezoelectric effect of the piezoelectric element Drive system for moving beam irradiation device 1, drive system for moving beam irradiation device 1 using Coulomb force (for example, electrostatic force generated between at least two electrodes), and Lorentz force (for example, between coil and magnetic pole) The generated electromagnetic force) drives the beam irradiation device 1. However, in the case where the interval D between the injection surface 121LS and the surface WSu is directly fixed, the interval adjustment system 14 may be substituted, and a spacer adjustment member such as a shim may be disposed on the support member 32 and the convex Between the edge members 13. Furthermore, in this case, the shim equidistant adjustment members may not be arranged between the support member 32 and the flange member 13. In addition, the beam irradiation device 1 may be movable in the XY direction.
為了計測藉由間隔調整系統14而可移動的束照射裝置1的Z方向上的位置（尤其是真空形成構件121的Z方向上的位置），掃描式電子顯微鏡SEM具備位置計測器15。位置計測器15例如包含編碼器及雷射干涉儀中的至少一者。再者，位置計測器15亦可計測束照射裝置1的XY方向上的位置或θX方向、θY方向上的姿勢。另外，亦可與位置計測器15分立地設置有計測束照射裝置1的XY方向上的位置或θX方向、θY方向上的姿勢的計測裝置。In order to measure the position in the Z direction of the beam irradiation device 1 movable by the interval adjustment system 14 (in particular, the position in the Z direction of the vacuum forming member 121 ), the scanning electron microscope SEM includes a position measuring device 15. The position measuring device 15 includes, for example, at least one of an encoder and a laser interferometer. In addition, the position measuring device 15 may measure the position in the XY direction or the posture in the θX direction and the θY direction of the beam irradiation device 1. In addition, a measuring device that measures the position in the XY direction or the posture in the θX direction and the θY direction of the beam irradiation device 1 may be provided separately from the position measuring device 15.
控制裝置4控制掃描式電子顯微鏡SEM的動作。例如，控制裝置4以將電子束EB照射於試樣W的方式控制束照射裝置1。例如，控制裝置4以將束通過空間SPb1～束通過空間SPb3設為真空空間的方式控制泵系統5（尤其是真空泵51及真空泵52）。例如，控制裝置4以對試樣W的表面WSu的所需位置照射電子束EB的方式，控制平台驅動系統23。例如，控制裝置4以真空形成構件121的射出面121LS與試樣W的表面WSu之間的間隔D成為所需間隔D_target的方式，控制間隔調整系統14。再者，為了控制掃描式電子顯微鏡SEM的動作，控制裝置4例如亦可包含中央處理單元（Central Processing Unit，CPU）等運算裝置及記憶體等記憶裝置的至少一者。The control device 4 controls the operation of the scanning electron microscope SEM. For example, the control device 4 controls the beam irradiation device 1 so as to irradiate the electron beam EB to the sample W. For example, the control device 4 controls the pump system 5 (especially the vacuum pump 51 and the vacuum pump 52) so that the beam passing space SPb1 to the beam passing space SPb3 are vacuum spaces. For example, the control device 4 controls the platform driving system 23 so as to irradiate the electron beam EB to a desired position on the surface WSu of the sample W. For example, the control device 4 controls the interval adjustment system 14 so that the interval D between the emission surface 121LS of the vacuum forming member 121 and the surface WSu of the sample W becomes a desired interval D_target. Furthermore, in order to control the operation of the scanning electron microscope SEM, the control device 4 may include, for example, at least one of a computing device such as a central processing unit (CPU) and a memory device such as a memory.
（2）退避構件223的利用方法
繼而，對平台22所具備的退避構件223的利用方法進行說明。本實施形態中，退避構件223主要用於維持（換言之，持續形成）束照射裝置1所形成的真空區域VSP。因此，退避構件223亦可具有可於束照射裝置1與退避構件223之間形成真空區域VSP的程度的尺寸。退避構件223的上表面ES亦可具有較真空區域VSP的XY方向上的尺寸更大的尺寸。作為使用此種退避構件223來維持真空區域VSP的場景的一例，可列舉將平台22保持的試樣W搬入搬出（或更換）的場景、及未形成真空區域VSP的束照射裝置1新形成真空區域VSP的場景。因此，以下對使用退避構件223來維持真空區域VSP的方法進行說明之後，對將平台22保持的試樣W搬入搬出的情形時使用退避構件223來維持真空區域VSP的動作、及未形成真空區域VSP的束照射裝置1新形成真空區域VSP的情形時使用退避構件223來維持真空區域VSP的動作依序進行說明。(2) How to use the retreat member 223
Next, a method of using the retraction member 223 included in the platform 22 will be described. In this embodiment, the retreat member 223 is mainly used to maintain (in other words, continue to form) the vacuum region VSP formed by the beam irradiation device 1. Therefore, the retreat member 223 may have a size that can form a vacuum region VSP between the beam irradiation device 1 and the retreat member 223. The upper surface ES of the retreat member 223 may have a larger size than the size of the vacuum region VSP in the XY direction. As an example of a scenario in which the vacuum region VSP is maintained using such a retreat member 223, a scenario in which the sample W held by the platform 22 is carried in and out (or replaced), and the beam irradiation device 1 that does not form the vacuum region VSP newly forms a vacuum Scene of regional VSP. Therefore, in the following, a method of maintaining the vacuum region VSP using the retreat member 223 will be described. When the sample W held by the stage 22 is carried in and out, the operation of using the retreat member 223 to maintain the vacuum region VSP and the vacuum region are not formed In the case where the beam irradiation apparatus 1 of VSP newly forms the vacuum region VSP, the operation of using the retreat member 223 to maintain the vacuum region VSP will be described in order.
（2-1）使用退避構件223的真空區域VSP的維持
首先，一方面參照圖5（a）～圖5（b）、圖6（a）～圖6（b）及圖7（a）～圖7（b），一方面對使用退避構件223來維持束照射裝置1所形成的真空區域VSP的方法進行說明。(2-1) Maintenance of vacuum area VSP using retreat member 223
First, referring to FIGS. 5(a) to 5(b), FIGS. 6(a) to 6(b), and FIGS. 7(a) to 7(b), on the one hand, the use of the retreat member 223 to maintain The method of the vacuum region VSP formed by the beam irradiation device 1 will be described.
如上文所述，退避構件223的上表面ES位於與保持構件221保持的試樣W的表面WSu相同的高度。因此，即便於平台22以束照射裝置1自試樣W向退避構件223離開的方式（即，以和試樣W相向的束照射裝置1與退避構件223相向的方式）移動的情形時，束照射裝置1於與試樣W之間形成的真空區域VSP亦於束照射裝置1與退避構件223之間同樣地維持。同樣地，即便於平台22以束照射裝置1自退避構件223向試樣W離開的方式（即，以和退避構件223相向的束照射裝置1與試樣W相向的方式）移動的情形時，束照射裝置1於與退避構件223之間形成的真空區域VSP亦於束照射裝置1與試樣W之間同樣地維持。因此，退避構件223可用於維持束照射裝置1所形成的真空區域VSP。即，退避構件223可用於在伴隨平台22的移動而束照射裝置1於試樣W與退避構件223之間移動的情形時，維持真空區域VSP。此處，束照射裝置1自試樣W向退避構件223離開的情況亦可稱為由束照射裝置1所得的電子束EB的照射位置自位於試樣W上的狀態變化為位於退避構件223的上表面ES的狀態，束照射裝置1自退避構件223向試樣W離開的情況亦可稱為由束照射裝置1所得的電子束EB的照射位置自位於退避構件223的上表面ES上的狀態變化為位於試樣W上的狀態。As described above, the upper surface ES of the retreat member 223 is located at the same height as the surface WSu of the sample W held by the holding member 221. Therefore, even when the platform 22 moves in such a manner that the beam irradiation device 1 moves away from the sample W to the retreat member 223 (that is, in such a way that the beam irradiation device 1 that faces the sample W faces the retreat member 223), the beam The vacuum region VSP formed between the irradiation device 1 and the sample W is also maintained between the beam irradiation device 1 and the retreat member 223. Similarly, even when the platform 22 moves in such a manner that the beam irradiation device 1 moves away from the retreating member 223 toward the sample W (that is, in such a manner that the beam irradiation device 1 facing the retreating member 223 faces the sample W), The vacuum region VSP formed between the beam irradiation device 1 and the retreat member 223 is also maintained between the beam irradiation device 1 and the sample W in the same manner. Therefore, the retreat member 223 can be used to maintain the vacuum region VSP formed by the beam irradiation device 1. That is, the retreat member 223 can be used to maintain the vacuum region VSP when the beam irradiation device 1 moves between the sample W and the retreat member 223 as the platform 22 moves. Here, the case where the beam irradiation device 1 is away from the sample W toward the retreat member 223 may also be referred to as the irradiation position of the electron beam EB obtained by the beam irradiation device 1 changing from the state on the sample W to the position on the retreat member 223 The state of the upper surface ES, and the case where the beam irradiation device 1 is away from the retreating member 223 toward the sample W can also be referred to as a state where the irradiation position of the electron beam EB obtained by the beam irradiation device 1 is located on the upper surface ES of the retreating member 223 Change to the state on the sample W.
具體而言，如圖5（a）及圖5（b）所示，設想束照射裝置1於與試樣W之間形成真空區域VSP的狀況。即，設想束照射裝置1與試樣W相向的狀況。於該狀況下，若平台驅動系統23使平台22沿Y軸方向且向+Y側移動，則束照射裝置1相對於平台22而沿Y軸方向且向-Y側相對移動。其結果，束照射裝置1所形成的真空區域VSP亦於試樣W的表面WSu上，相對於平台22沿Y軸方向且向-Y側相對移動。若平台22持續移動，則經由圖6（a）及圖6（b）所示的狀態，而如圖7（a）及圖7（b）所示，束照射裝置1離開試樣W。即，束照射裝置1的狀態自與試樣W相向的非退避狀態向與退避構件223相向的退避狀態切換。即，束照射裝置1的狀態自於與試樣W之間可形成真空區域VSP的非退避狀態向於與退避構件223之間可形成為真空區域VSP的退避狀態切換。Specifically, as shown in FIGS. 5( a) and 5 (b ), it is assumed that the beam irradiation device 1 forms a vacuum region VSP between the sample W and the sample. That is, it is assumed that the beam irradiation device 1 faces the sample W. In this situation, if the stage drive system 23 moves the stage 22 in the Y-axis direction and toward the +Y side, the beam irradiation device 1 moves relative to the stage 22 in the Y-axis direction and toward the −Y side. As a result, the vacuum region VSP formed by the beam irradiation device 1 also moves on the surface WSu of the sample W relative to the stage 22 in the Y-axis direction and toward the -Y side. When the stage 22 continues to move, the beam irradiation device 1 leaves the sample W through the state shown in FIGS. 6(a) and 6(b), and as shown in FIGS. 7(a) and 7(b). That is, the state of the beam irradiation device 1 is switched from the non-retracted state facing the sample W to the retracted state facing the retracting member 223. That is, the state of the beam irradiation device 1 is switched from the non-retracted state where the vacuum region VSP can be formed with the sample W to the retracted state where the vacuum region VSP can be formed with the retreat member 223.
於束照射裝置1的狀態自非退避狀態向退避狀態切換的過程中，如圖6（a）及圖6（b）所示，束照射裝置1的狀態暫時成為與試樣W及退避構件223兩者相向的中間狀態。即，束照射裝置1的狀態暫時成為形成面向試樣W與退避構件223的邊界的真空區域VSP的中間狀態。此處，假設於退避構件223的上表面ES與試樣W的表面WSu位於大不相同的高度的情形時，有處於中間狀態的束照射裝置1與試樣W之間的間隔D、與處於中間狀態的束照射裝置1與退避構件223之間的間隔D'（即，束照射裝置1的射出面121LS與退避構件223的上表面ES之的間隔D'）相對較大地偏離的可能性。因此，有間隔D成為可適當形成真空區域VSP的間隔，另一方面間隔D'並未成為可適當形成真空區域VSP的間隔的可能性。其結果，有於在與試樣W之間適當形成有真空區域VSP的束照射裝置1的狀態自非退避狀態向中間狀態切換的時間點，束照射裝置1所形成的真空區域VSP被破壞（換言之，瓦解或消失）的可能性。即，於束照射裝置1的狀態自非退避狀態向中間狀態切換時，有束照射裝置1無法形成面向試樣W與退避構件223的邊界的真空區域VSP的可能性。其結果，於束照射裝置1的狀態自非退避狀態向退避狀態切換時，有束照射裝置1無法適當持續形成（即，維持）真空區域VSP的可能性。於該情形時，掃描式電子顯微鏡SEM於束照射裝置1的狀態自非退避狀態向退避狀態切換之後，以束照射裝置1與退避構件223之間的間隔D'成為所需間隔D_target的方式調整間隔D'後，再次形成真空區域VSP。When the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, as shown in FIGS. 6( a) and 6 (b ), the state of the beam irradiation device 1 temporarily becomes the same as the sample W and the retreat member 223 The intermediate state of the two. That is, the state of the beam irradiation device 1 is temporarily an intermediate state where the vacuum region VSP facing the boundary between the sample W and the retreat member 223 is formed. Here, suppose that when the upper surface ES of the retreat member 223 and the surface WSu of the sample W are at different heights, there is an interval D between the beam irradiation device 1 and the sample W in the intermediate state, and The interval D′ between the beam irradiation device 1 in the intermediate state and the retreat member 223 (that is, the interval D′ between the emission surface 121LS of the beam irradiation device 1 and the upper surface ES of the retreat member 223) is relatively likely to deviate. Therefore, there is a possibility that the interval D becomes an interval where the vacuum region VSP can be appropriately formed, and on the other hand, the interval D′ does not become an interval where the vacuum region VSP can be appropriately formed. As a result, at a point in time when the state of the beam irradiation device 1 in which the vacuum region VSP is appropriately formed between the sample W is switched from the non-retracted state to the intermediate state, the vacuum region VSP formed by the beam irradiation device 1 is destroyed ( In other words, the possibility of disintegration or disappearance. That is, when the state of the beam irradiation device 1 is switched from the non-retracted state to the intermediate state, there is a possibility that the beam irradiation device 1 cannot form the vacuum region VSP facing the boundary between the sample W and the retreat member 223. As a result, when the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, there is a possibility that the beam irradiation device 1 cannot properly continue to form (ie, maintain) the vacuum region VSP. In this case, after the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, the scanning electron microscope SEM is adjusted so that the interval D′ between the beam irradiation device 1 and the retracted member 223 becomes the required interval D_target After the interval D', the vacuum region VSP is formed again.
然而，本實施形態中，退避構件223的上表面ES位於與試樣W的表面WSu相同的高度。因此，處於中間狀態的束照射裝置1與試樣W之間的間隔D、與處於中間狀態的束照射裝置1與退避構件223之間的間隔D'相對較大地偏離的可能性相對較小。典型而言，間隔D與間隔D'一致。因此，於間隔D成為可適當形成真空區域VSP的間隔的情形時，間隔D'亦成為可適當形成真空區域VSP的間隔。因此，即便於與試樣W之間適當形成有真空區域VSP的束照射裝置1的狀態自非退避狀態向中間狀態切換，束照射裝置1所形成的真空區域VSP被破壞的可能性亦相對較小。即，即便束照射裝置1的狀態自非退避狀態向中間狀態切換，束照射裝置1亦可適當形成面向試樣W與退避構件223的邊界的真空區域VSP。其結果，即便束照射裝置1的狀態自非退避狀態向中間狀態切換，束照射裝置1亦可適當持續形成（即，維持）真空區域VSP。因此，即便束照射裝置1的狀態自非退避狀態經由中間狀態向退避狀態切換，束照射裝置1亦可適當持續形成真空區域VSP。即，掃描式電子顯微鏡SEM可維持形成有真空區域VSP，而使束照射裝置1的狀態自非退避狀態向退避狀態切換。However, in this embodiment, the upper surface ES of the retreat member 223 is located at the same height as the surface WSu of the sample W. Therefore, the interval D between the beam irradiation device 1 in the intermediate state and the sample W and the interval D′ between the beam irradiation device 1 in the intermediate state and the retreat member 223 are relatively less likely to deviate. Typically, the interval D coincides with the interval D'. Therefore, when the interval D becomes an interval where the vacuum region VSP can be appropriately formed, the interval D′ also becomes an interval where the vacuum region VSP can be appropriately formed. Therefore, even if the state of the beam irradiation device 1 in which the vacuum region VSP is appropriately formed between the sample W is switched from the non-retracted state to the intermediate state, the possibility that the vacuum region VSP formed by the beam irradiation device 1 is destroyed is relatively high small. That is, even if the state of the beam irradiation device 1 is switched from the non-retracted state to the intermediate state, the beam irradiation device 1 can appropriately form the vacuum region VSP facing the boundary between the sample W and the retreat member 223. As a result, even if the state of the beam irradiation device 1 is switched from the non-retracted state to the intermediate state, the beam irradiation device 1 can appropriately continue to form (ie, maintain) the vacuum region VSP. Therefore, even if the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state via the intermediate state, the beam irradiation device 1 can continue to form the vacuum region VSP appropriately. That is, the scanning electron microscope SEM can maintain the formation of the vacuum region VSP and switch the state of the beam irradiation device 1 from the non-retracted state to the retracted state.
由於同樣的原因，即便束照射裝置1的狀態自退避狀態經由中間狀態向非退避狀態切換，束照射裝置1亦可適當持續形成真空區域VSP。即，掃描式電子顯微鏡SEM可維持形成有真空區域VSP的狀況，使束照射裝置1的狀態自退避狀態向非退避狀態切換。For the same reason, even if the state of the beam irradiation device 1 is switched from the retreat state to the non-retreat state via the intermediate state, the beam irradiation device 1 can continue to form the vacuum region VSP appropriately. That is, the scanning electron microscope SEM can maintain the state where the vacuum region VSP is formed, and can switch the state of the beam irradiation device 1 from the retreat state to the non-retreat state.
此時，間隔調整系統14及平台驅動系統23的至少一者亦可於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的前後，以處於非退避狀態的束照射裝置1與試樣W之間的間隔D、與處於退避狀態的束照射裝置1與退避構件223之間的間隔D'的偏離量低於容許下限值的方式（或以一致的方式），調整Z軸方向上的平台22與束照射裝置1的相對位置。例如，間隔調整系統14及平台驅動系統23的至少一者亦可於束照射裝置1的狀態自非退避狀態向退避狀態切換時，以自處於非退避狀態的束照射裝置1與試樣W之間的間隔D成為於束照射裝置1與試樣W之間可適當形成真空區域VSP的所需的第一間隔D_desire1的狀態，向處於退避狀態的束照射裝置1與退避構件223之間的間隔D'成為於束照射裝置1與退避部分223之間可適當形成真空區域VSP的所需的第二間隔D_desire2的狀態過渡的方式，調整Z軸方向上的平台22與束照射裝置1的相對位置。於該情形時，第一間隔D_desire1與第二間隔D_desire2之間的差量低於容許下限值，或與容許下限值一致。或者，第一間隔D_desire1與第二間隔D_desire2亦可相同。進而，第一間隔D_desire1及第二間隔D_desire2的至少一者亦可與上文所述的所需間隔D_target相同。其後，平台驅動系統23亦可調整沿著XY平面的方向上的平台22與束照射裝置1的相對位置，使束照射裝置1的狀態自非退避狀態向退避狀態切換。同樣地，例如間隔調整系統14及平台驅動系統23的至少一者亦可於束照射裝置1的狀態自退避狀態向非退避狀態切換時，以自處於退避狀態的束照射裝置1與退避構件223之間的間隔D'成為第二間隔D_desire2的狀態，向處於非退避狀態的束照射裝置1與試樣W之間的間隔D成為第一間隔D_desire1的狀態過渡的方式，調整Z軸方向上的平台22與束照射裝置1的相對位置。其後，平台驅動系統23亦可調整沿著XY平面的方向上的平台22與束照射裝置1的相對位置，使束照射裝置1的狀態自退避狀態向非退避狀態切換。其結果，於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的前後，束照射裝置1可更適當地持續形成真空區域VSP。At this time, at least one of the interval adjustment system 14 and the platform driving system 23 may also be in the non-back-off state before and after the state of the beam irradiation device 1 is switched from the non-back-off state to the back-off state, or from the back-off state to the non-back-off state. The distance D between the beam irradiation device 1 in the state and the sample W and the interval D′ between the beam irradiation device 1 in the retracted state and the retreat member 223 are less than the allowable lower limit (or in accordance with Way), adjust the relative position of the platform 22 and the beam irradiation device 1 in the Z-axis direction. For example, at least one of the interval adjustment system 14 and the platform driving system 23 may use the beam irradiation device 1 and the sample W in the non-retracted state when the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state. The interval D between the beam irradiation device 1 and the sample W is in a state where the first interval D_desire1 required for the vacuum region VSP to be properly formed, and the distance between the beam irradiation device 1 in the retracted state and the retreat member 223 D′ becomes a state transition between the beam irradiation device 1 and the retreat portion 223 to form a necessary second interval D_desire2 of the vacuum region VSP, and adjusts the relative position of the platform 22 and the beam irradiation device 1 in the Z-axis direction . In this case, the difference between the first interval D_desire1 and the second interval D_desire2 is lower than or equal to the allowable lower limit value. Alternatively, the first interval D_desire1 and the second interval D_desire2 may be the same. Furthermore, at least one of the first interval D_desire1 and the second interval D_desire2 may also be the same as the above-mentioned required interval D_target. Thereafter, the platform driving system 23 may also adjust the relative position of the platform 22 and the beam irradiation device 1 in the direction along the XY plane to switch the state of the beam irradiation device 1 from the non-retracted state to the retracted state. Similarly, for example, at least one of the interval adjustment system 14 and the platform driving system 23 can also use the beam irradiation device 1 and the retreat member 223 in the retreat state when the state of the beam irradiation device 1 is switched from the retreat state to the non-retreat state. The interval D′ between them becomes the state of the second interval D_desire2, and the Z axis direction is adjusted so that the interval D between the beam irradiation device 1 in the non-retracted state and the sample W becomes the state of the first interval D_desire1. The relative position of the platform 22 and the beam irradiation device 1. Thereafter, the stage driving system 23 may also adjust the relative position of the stage 22 and the beam irradiation device 1 in the direction along the XY plane to switch the state of the beam irradiation device 1 from the retreated state to the non-retracted state. As a result, the beam irradiation device 1 can continue to form the vacuum region VSP more appropriately before and after the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, or from the retracted state to the non-retracted state.
再者，如上文所述，本實施形態中，退避構件223的上表面ES位於與試樣W的表面WSu相同的高度。因此，於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的前後，若Z軸方向上的束照射裝置1相對於平台22的相對位置不改變（即，若維持所述相對位置），則間隔D與間隔D'一致。因此，間隔調整系統14及平台驅動系統23的至少一者亦能以下述方式調整：於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的前後，維持Z軸方向上的平台22與束照射裝置1的相對位置。In addition, as described above, in this embodiment, the upper surface ES of the retraction member 223 is located at the same height as the surface WSu of the sample W. Therefore, before and after the state of the beam irradiation device 1 is switched from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state, if the relative position of the beam irradiation device 1 in the Z-axis direction relative to the stage 22 does not change ( That is, if the relative position is maintained), the interval D coincides with the interval D'. Therefore, at least one of the interval adjustment system 14 and the platform driving system 23 can also be adjusted in the following manner: before and after the state of the beam irradiation device 1 is switched from the non-backed state to the backed state, or from the backed state to the non-backed state, The relative position of the stage 22 in the Z-axis direction and the beam irradiation device 1 is maintained.
然而，間隔調整系統14及平台驅動系統23的至少一者亦能以下述方式調整Z軸方向上的平台22與束照射裝置1的相對位置：於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的前後，間隔D與間隔D'不同。於該情形時，間隔調整系統14及平台驅動系統23的至少一者亦能以間隔D成為於束照射裝置1與試樣W之間可適當形成真空區域VSP的第一間隔D_desire1，且間隔D'成為於束照射裝置1與退避構件223之間可適當形成真空區域VSP且與第一間隔D_desire1不同的第二間隔D_desire2的方式，調整Z軸方向上的平台22與束照射裝置1的相對位置。其結果，即便於間隔D與間隔D'不一致的情形時，亦於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的前後，束照射裝置1可更適當地持續形成真空區域VSP。總之，間隔調整系統14及平台驅動系統23的至少一者以於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的前後適當維持真空區域VSP的方式，與束照射裝置1的狀態的變更（即，沿著XY平面的平台22的移動）一致或於其前後，調整Z軸方向上的平台22與束照射裝置1的相對位置。However, at least one of the interval adjustment system 14 and the platform drive system 23 can also adjust the relative position of the platform 22 and the beam irradiation device 1 in the Z-axis direction in the following manner: from the state of the beam irradiation device 1 to the retreat from the non-retracted state The interval D is different from the interval D'before and after the state switching, or switching from the back-off state to the non-back-off state. In this case, at least one of the interval adjustment system 14 and the platform driving system 23 can also use the interval D as the first interval D_desire1 between the beam irradiation device 1 and the sample W to properly form the vacuum region VSP, and the interval D 'Because the vacuum space VSP can be appropriately formed between the beam irradiation device 1 and the retreat member 223 and the second interval D_desire2 different from the first interval D_desire1 is adjusted, the relative position of the platform 22 in the Z-axis direction and the beam irradiation device 1 is adjusted . As a result, even when the interval D and the interval D'do not match, the beam irradiation device 1 can be used before and after the state of the beam irradiation device 1 is switched from the non-backed state to the backed state, or from the backed state to the non-backed state. The vacuum region VSP is continuously formed more appropriately. In short, at least one of the interval adjustment system 14 and the platform driving system 23 can maintain the vacuum region VSP appropriately before and after the state of the beam irradiation device 1 is switched from the non-backed state to the backed state, or from the backed state to the non-backed state. In accordance with the change of the state of the beam irradiation device 1 (that is, the movement of the stage 22 along the XY plane) or before and after it, the relative position of the stage 22 and the beam irradiation device 1 in the Z-axis direction is adjusted.
（2-2）將平台22保持的試樣W搬入搬出的動作
繼而，一方面參照圖8（a）～圖8（d），一方面對於將平台22保持的試樣W搬入搬出（即，更換）的情形時使用退避構件223來維持真空區域VSP的動作的流程加以說明。(2-2) Movement of loading and unloading the sample W held by the platform 22
Next, referring to FIGS. 8( a) to 8 (d ), on the one hand, when the sample W held by the platform 22 is carried in and out (ie, replaced), the retreat member 223 is used to maintain the operation of the vacuum region VSP. The process is described.
試樣W的搬入搬出例如於平台22所保持的試樣W的狀態計測完成之後進行。為了計測試樣W的狀態，束照射裝置1需要對試樣W照射電子束EB。因此，於將試樣W搬入搬出之前（即，平台22保持試樣W的期間的至少一部分中），如圖8（a）所示，束照射裝置1於與試樣W相向的狀態下，於與試樣W之間形成有真空區域VSP。即，束照射裝置1處於非退避狀態。The loading and unloading of the sample W is performed, for example, after the measurement of the state of the sample W held by the platform 22 is completed. In order to calculate the state of the test sample W, the beam irradiation device 1 needs to irradiate the sample W with the electron beam EB. Therefore, before the sample W is carried in and out (that is, at least part of the period during which the platform 22 holds the sample W), as shown in FIG. 8( a ), the beam irradiation device 1 is in a state facing the sample W, A vacuum region VSP is formed between the sample W. That is, the beam irradiation device 1 is in a non-retracted state.
於試樣W的狀態計測完成之後，如圖8（b）所示，平台驅動系統23使平台22沿XY平面移動，使束照射裝置1的狀態自非退避狀態向退避狀態切換。此時，如上文所述，間隔調整系統14及平台驅動系統23的至少一者亦能以適當維持真空區域VSP的方式，調整Z軸方向上的束照射裝置1相對於平台22的相對位置。其結果，於束照射裝置1的狀態自非退避狀態向退避狀態切換的前後，維持真空區域VSP。即，束照射裝置1維持於與試樣W及退避構件223的至少一者之間持續形成有真空區域VSP，而相對於平台22移動。After the state measurement of the sample W is completed, as shown in FIG. 8( b ), the stage driving system 23 moves the stage 22 along the XY plane to switch the state of the beam irradiation device 1 from the non-retracted state to the retreated state. At this time, as described above, at least one of the interval adjustment system 14 and the platform driving system 23 can also adjust the relative position of the beam irradiation device 1 in the Z-axis direction relative to the platform 22 in such a manner that the vacuum region VSP is appropriately maintained. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state. That is, the beam irradiation device 1 is maintained with the vacuum area VSP continuously formed between at least one of the sample W and the retreat member 223 and moves relative to the stage 22.
束照射裝置1的狀態切換為退避狀態後，將平台22保持的試樣W搬入搬出。具體而言，如圖8（c）所示，將平台22保持的試樣W（即，計測狀態的動作結束的試樣W）自平台22卸載（即，搬出）。然後，如圖8（d）所示，相對於平台22，將新的試樣W（即，要新進行計測狀態的動作的試樣W）裝載於（即，搬入至）平台22。於將平台22保持的試樣W搬入搬出的期間中，如圖8（c）及圖8（d）所示，束照射裝置1的狀態維持退避狀態。其結果，於將平台22保持的試樣W搬入搬出的期間中，如圖8（c）及圖8（d）所示，束照射裝置1於與退避構件223之間持續形成真空區域VSP。After the state of the beam irradiation device 1 is switched to the retracted state, the sample W held by the platform 22 is carried in and out. Specifically, as shown in FIG. 8( c ), the sample W held by the platform 22 (that is, the sample W whose operation in the measurement state is completed) is unloaded from the platform 22 (that is, carried out). Then, as shown in FIG. 8( d ), with respect to the platform 22, a new sample W (that is, the sample W to be newly operated in the measurement state) is loaded (ie, carried into) the platform 22. During the period in which the sample W held by the platform 22 is carried in and out, as shown in FIGS. 8( c) and 8 (d ), the state of the beam irradiation device 1 remains in the retracted state. As a result, during the period in which the sample W held by the stage 22 is carried in and out, as shown in FIGS. 8( c) and 8 (d ), the beam irradiation device 1 continues to form the vacuum region VSP between the retreating member 223.
然後，若平台22保持的試樣W的搬入搬出完成，則平台驅動系統23使平台22沿XY平面移動，使束照射裝置1的狀態自退避狀態向非退避狀態切換。此時，亦如上文所述，間隔調整系統14及平台驅動系統23的至少一者亦能以適當維持真空區域VSP的方式，調整Z軸方向上的束照射裝置1相對於平台22的相對位置。其結果，於束照射裝置1的狀態自退避狀態向非退避狀態切換的前後，維持真空區域VSP。即，束照射裝置1維持於與試樣W及退避構件223的至少一者之間持續形成有真空區域VSP，而相對於平台22移動。Then, when the loading and unloading of the sample W held by the stage 22 is completed, the stage drive system 23 moves the stage 22 along the XY plane, and switches the state of the beam irradiation device 1 from the retreated state to the non-retracted state. At this time, as described above, at least one of the interval adjustment system 14 and the platform driving system 23 can also adjust the relative position of the beam irradiation device 1 in the Z-axis direction relative to the platform 22 in such a way as to maintain the vacuum region VSP appropriately . As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the retreat state to the non-retreat state. That is, the beam irradiation device 1 is maintained with the vacuum area VSP continuously formed between at least one of the sample W and the retreat member 223 and moves relative to the stage 22.
然後，束照射裝置1的狀態變為非退避狀態後，掃描式電子顯微鏡SEM向新的試樣W照射電子束EB而計測新的試樣W的狀態。即，束照射裝置1經由在與試樣W之間形成的真空區域VSP而向試樣W照射電子束EB。Then, after the state of the beam irradiation device 1 becomes the non-retracted state, the scanning electron microscope SEM irradiates the new sample W with the electron beam EB to measure the state of the new sample W. That is, the beam irradiation device 1 irradiates the sample W with the electron beam EB via the vacuum region VSP formed between the sample W.
如此，掃描式電子顯微鏡SEM可維持真空區域VSP而將平台22保持的試樣W搬入搬出。因此，掃描式電子顯微鏡SEM亦可不於每當搬入搬出試樣W時新形成真空區域VSP。即，掃描式電子顯微鏡SEM亦可不於將試樣W搬入搬出之前使束通過空間SPb1～束通過空間SPb3暫且回到大氣壓空間，並於將試樣W搬入搬出之後將束通過空間SPb1～束通過空間SPb3再次排氣而設為真空空間。其結果，掃描式電子顯微鏡SEM與需要在每當搬入搬出試樣W時新形成真空區域VSP的、比較例的掃描式電子顯微鏡相比較，能以形成真空區域VSP所需要的時間的程度來縮短計測試樣W所需要的時間。即，掃描式電子顯微鏡SEM的產率提高。In this way, the scanning electron microscope SEM can maintain the vacuum region VSP and carry in and out the sample W held by the stage 22. Therefore, the scanning electron microscope SEM does not need to newly form the vacuum region VSP every time the sample W is carried in and out. That is, the scanning electron microscope SEM may not temporarily return the beam passage space SPb1 to the beam passage space SPb3 to the atmospheric pressure space before carrying the sample W in and out, and pass the beam passage space SPb1 to the beam after carrying the sample W in and out The space SPb3 is exhausted again to be a vacuum space. As a result, the scanning electron microscope SEM can be shortened by the degree of time required to form the vacuum region VSP compared to the scanning electron microscope of the comparative example in which the vacuum region VSP needs to be newly formed every time the sample W is carried in and out. Calculate the time required for the test sample W. That is, the yield of the scanning electron microscope SEM is improved.
（2-3）未形成真空區域VSP的束照射裝置1新形成真空區域VSP的動作
繼而，一方面參照圖9（a）～圖9（d），一方面對束照射裝置1新形成真空區域VSP的情形時使用退避構件223來維持真空區域VSP的動作的流程進行說明。(2-3) Beam irradiation device 1 where the vacuum region VSP is not formed The operation of newly forming the vacuum region VSP
Next, referring to FIGS. 9( a) to 9 (d ), the flow of the operation of using the retreat member 223 to maintain the vacuum region VSP when the beam irradiation device 1 newly forms the vacuum region VSP will be described.
新形成真空區域VSP的動作例如於新開始平台22所保持的試樣W的狀態計測時進行。具體而言，新形成真空區域VSP的動作例如於為了計測試樣W的狀態而開始電子束EB的照射之前進行。The operation of newly forming the vacuum region VSP is performed, for example, when the state of the sample W held by the stage 22 is newly started. Specifically, the operation of newly forming the vacuum region VSP is performed before, for example, the irradiation of the electron beam EB is started in order to calculate the state of the test sample W.
本實施形態中，束照射裝置1於退避狀態下新形成真空區域VSP。束照射裝置1於與退避構件223相向的狀態下新形成真空區域VSP。束照射裝置1於與退避構件223之間新形成真空區域VSP。換言之，束照射裝置1亦可不於非退避狀態下新形成真空區域VSP。束照射裝置1亦可不於與試樣W相向的狀態下新形成真空區域VSP。束照射裝置1亦可不於與試樣W之間新形成真空區域VSP。因此，於如圖9（a）所示，於束照射裝置1開始形成真空區域VSP之前束照射裝置1處於非退避狀態的情形時，平台驅動系統23使平台22沿XY平面移動，如圖9（b）所示，使束照射裝置1的狀態自非退避狀態向退避狀態切換。另一方面，於束照射裝置1開始形成真空區域VSP之前束照射裝置1已處於退避狀態的情形時，平台驅動系統23亦可不使平台22移動。In the present embodiment, the beam irradiation device 1 newly forms a vacuum region VSP in the retracted state. The beam irradiation device 1 newly forms a vacuum region VSP in a state facing the retreat member 223. The beam irradiation device 1 newly forms a vacuum region VSP between the retreat member 223. In other words, the beam irradiation device 1 may not newly form the vacuum region VSP in the non-retracted state. The beam irradiation device 1 may not newly form the vacuum region VSP in a state facing the sample W. The beam irradiation device 1 may not newly form a vacuum region VSP with the sample W. Therefore, as shown in FIG. 9( a ), before the beam irradiation device 1 starts to form the vacuum region VSP, the beam irradiation device 1 is in a non-retracted state, the stage driving system 23 moves the stage 22 along the XY plane, as shown in FIG. 9 As shown in (b), the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state. On the other hand, when the beam irradiation device 1 is in the retreat state before the beam irradiation device 1 starts to form the vacuum region VSP, the platform driving system 23 may not move the platform 22.
其後，如圖9（c）所示，束照射裝置1新形成真空區域VSP。具體而言，使用間隔調整系統14及平台驅動系統23的至少一者，將束照射裝置1的射出面121LS與退避構件223的上表面ES的間隔D設為所需間隔D_target。其後，真空泵51將束通過空間SPb1～束通過空間SPb3排氣而減壓。進而，真空泵52將束通過空間SPb3的周圍空間排氣而減壓。其結果，束照射裝置1（尤其是差動排氣系統12）可藉由差動排氣而於與退避構件223之間形成真空區域VSP。再者，亦可於將束照射裝置1的射出面121LS與退避構件223的上表面ES的間隔D設定為所需間隔D_target的動作之前，開始利用真空泵51進行的束通過空間SPb1～束通過空間SPb3的排氣、減壓動作，亦可同時進行該些兩動作。Thereafter, as shown in FIG. 9( c ), the beam irradiation device 1 newly forms a vacuum region VSP. Specifically, using at least one of the interval adjustment system 14 and the stage drive system 23, the interval D between the emission surface 121LS of the beam irradiation device 1 and the upper surface ES of the retreat member 223 is set to the required interval D_target. Thereafter, the vacuum pump 51 evacuates the beam passing space SPb1 to SPb3 to reduce the pressure. Furthermore, the vacuum pump 52 evacuates the beam passing space SPb3 and decompresses it. As a result, the beam irradiation device 1 (especially the differential exhaust system 12) can form a vacuum region VSP between the retreating member 223 by differential exhaust. Furthermore, the beam passing space SPb1 to the beam passing space by the vacuum pump 51 may be started before the operation of setting the distance D between the exit surface 121LS of the beam irradiation device 1 and the upper surface ES of the retreating member 223 to the desired distance D_target. The exhaust and decompression operations of SPb3 can also perform these two operations simultaneously.
新形成真空區域VSP之後，平台驅動系統23使平台22沿XY平面移動，如圖9（d）所示，使束照射裝置1的狀態自退避狀態向非退避狀態切換。此時，如上文所述，間隔調整系統14及平台驅動系統23的至少一者亦能以適當維持真空區域VSP的方式，調整Z軸方向上的束照射裝置1相對於平台22的相對位置。其結果，於束照射裝置1的狀態自退避狀態向非退避狀態切換的前後，維持真空區域VSP。即，束照射裝置1維持於與試樣W及退避構件223的至少一者之間持續形成有真空區域VSP，而相對於平台22移動。因此，以面向退避構件223的方式形成的真空區域VSP以自退避構件223向試樣W移動的方式，相對於平台22而相對移動。After the vacuum region VSP is newly formed, the stage driving system 23 moves the stage 22 along the XY plane, and as shown in FIG. 9( d ), switches the state of the beam irradiation device 1 from the retreat state to the non-retreat state. At this time, as described above, at least one of the interval adjustment system 14 and the platform driving system 23 can also adjust the relative position of the beam irradiation device 1 in the Z-axis direction relative to the platform 22 in such a manner that the vacuum region VSP is appropriately maintained. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the retreat state to the non-retreat state. That is, the beam irradiation device 1 is maintained with the vacuum area VSP continuously formed between at least one of the sample W and the retreat member 223 and moves relative to the stage 22. Therefore, the vacuum region VSP formed so as to face the retreat member 223 moves relative to the stage 22 so as to move from the retreat member 223 to the sample W.
然後，束照射裝置1的狀態變為非退避狀態後，掃描式電子顯微鏡SEM向試樣W照射電子束EB而計測試樣W的狀態。即，束照射裝置1經由在與試樣W之間形成的真空區域VSP而對試樣W照射電子束EB。Then, after the state of the beam irradiation device 1 is changed to the non-retracted state, the scanning electron microscope SEM irradiates the sample W with the electron beam EB to calculate the state of the test sample W. That is, the beam irradiation device 1 irradiates the sample W with the electron beam EB via the vacuum region VSP formed between the sample W.
如此，掃描式電子顯微鏡SEM可於電子束照射裝置1與退避構件223之間新形成真空區域VSP，並且維持該新形成的真空區域VSP而自退避構件223向試樣W移動。即，掃描式電子顯微鏡SEM可於為了開始計測試樣W的狀態而新形成真空區域VSP時，將電子束照射裝置1與退避構件223之間的空間設定為用以新形成真空區域VSP的空間。因此，掃描式電子顯微鏡SEM亦可不於電子束照射裝置1與試樣W之間新形成真空區域VSP。即，掃描式電子顯微鏡SEM亦可不將電子束照射裝置1與試樣W之間的空間設定為用以新形成真空區域VSP的空間。因此，掃描式電子顯微鏡SEM亦可抑制真空區域VSP的新形成對試樣W造成的影響，並且新形成真空區域VSP。例如，若於某物體上新形成真空區域VSP，則面向該物體的空間壓力急遽減少。因此，有物體的溫度（尤其是物體中面向壓力減少的空間的部分的溫度）變動的可能性。物體的溫度變動有導致物體的熱變形的可能性。物體的熱變形有使物體的狀態的計測精度劣化的可能性。因此，若假設於電子束照射裝置1與試樣W之間新形成真空區域VSP，則有試樣W熱變形而試樣W的狀態的計測精度劣化的可能性。然而，本實施形態中，於電子束照射裝置1與退避構件223之間新形成真空區域VSP。因此，抑制由新形成真空區域VSP所引起的試樣W的熱變形。因此，掃描式電子顯微鏡SEM能以相對較高的精度來計測試樣W的狀態。In this way, the scanning electron microscope SEM can newly form a vacuum region VSP between the electron beam irradiation device 1 and the retreat member 223 and maintain the newly formed vacuum region VSP to move from the retreat member 223 to the sample W. That is, the scanning electron microscope SEM can set the space between the electron beam irradiation device 1 and the retreat member 223 as a space for newly forming the vacuum region VSP when the vacuum region VSP is newly formed in order to start the measurement of the test sample W . Therefore, the scanning electron microscope SEM may not newly form a vacuum region VSP between the electron beam irradiation device 1 and the sample W. That is, the scanning electron microscope SEM may not set the space between the electron beam irradiation device 1 and the sample W as a space for newly forming the vacuum region VSP. Therefore, the scanning electron microscope SEM can also suppress the influence of the new formation of the vacuum region VSP on the sample W, and newly form the vacuum region VSP. For example, if a vacuum region VSP is newly formed on an object, the space pressure facing the object is suddenly reduced. Therefore, there is a possibility that the temperature of the object (particularly the temperature of the portion of the object facing the space where the pressure is reduced) varies. Changes in the temperature of an object may cause thermal deformation of the object. The thermal deformation of the object may deteriorate the measurement accuracy of the state of the object. Therefore, if a vacuum region VSP is newly formed between the electron beam irradiation device 1 and the sample W, the sample W may be thermally deformed and the measurement accuracy of the state of the sample W may deteriorate. However, in this embodiment, a vacuum region VSP is newly formed between the electron beam irradiation device 1 and the retreat member 223. Therefore, the thermal deformation of the sample W caused by the newly formed vacuum region VSP is suppressed. Therefore, the scanning electron microscope SEM can measure the state of the test sample W with relatively high accuracy.
然而，視掃描式電子顯微鏡SEM中容許的計測精度不同，束照射裝置1亦可於退避狀態下新形成真空區域VSP。束照射裝置1亦可於與試樣W相向的狀態下新形成真空區域VSP。束照射裝置1亦可於與試樣W之間新形成真空區域VSP。However, depending on the measurement accuracy allowed in the scanning electron microscope SEM, the beam irradiation device 1 may newly form a vacuum region VSP in the retracted state. The beam irradiation device 1 may newly form a vacuum region VSP in a state facing the sample W. The beam irradiation device 1 may newly form a vacuum region VSP between the sample W.
（3）變形例
繼而，對掃描式電子顯微鏡SEM的變形例進行說明。(3) Modification
Next, a modification of the scanning electron microscope SEM will be described.
（3-1）第1變形例
首先，對第1變形例的掃描式電子顯微鏡SEMa加以說明。掃描式電子顯微鏡SEMa與所述的掃描式電子顯微鏡SEM相比較，於具備平台22a代替平台22的方面不同。掃描式電子顯微鏡SEMa的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖10，一方面對第1變形例的平台22a加以說明。圖10為表示第1變形例的平台22a的結構的剖面圖。(3-1) The first modification
First, the scanning electron microscope SEMa of the first modification will be described. The scanning electron microscope SEMa is different from the scanning electron microscope SEM described above in that a platform 22a is provided instead of the platform 22. The other structure of the scanning electron microscope SEMa may also be the same as the scanning electron microscope SEM. Therefore, the platform 22a of the first modification will be described below with reference to FIG. 10 on the one hand. FIG. 10 is a cross-sectional view showing the structure of the platform 22a according to the first modification.
如圖10所示，平台22a與所述的平台22相比較，於在退避構件223的上表面ES的至少一部分形成有至少一個標記區域MA的方面不同。平台22a的其他結構亦可與平台22相同。As shown in FIG. 10, the platform 22 a is different from the platform 22 described above in that at least one mark area MA is formed on at least a part of the upper surface ES of the retreat member 223. The other structure of the platform 22a may be the same as the platform 22.
於標記區域MA中形成有至少一個標記M。標記M例如亦可包含格子標記M1，該格子標記M1如圖11（a）所示，是將沿X軸方向延伸的長條形狀的線標記MX以沿Y軸方向以所需的間距ΛX排列的方式形成。標記M例如亦可包含格子標記M2，該格子標記M2如圖11（b）所示，是將沿Y軸方向延伸的長條形狀的線標記MY以沿X軸方向以所需的間距ΛY排列的方式形成。標記M例如亦可包含格子標記M3，該格子標記M3如圖11（c）所示，是將沿與X軸方向及Y軸方向兩者交叉的第一方向延伸的長條形狀的線標記ML，以沿與第一方向交叉的第二方向以所需的間距ΛL排列的方式形成。當然，標記M亦可包含與圖11（a）～圖11（c）所示的標記不同的標記。At least one mark M is formed in the mark area MA. The mark M may include, for example, a grid mark M1, as shown in FIG. 11(a), a long line mark MX extending in the X-axis direction is arranged at a required pitch ΛX in the Y-axis direction Form. The mark M may include, for example, a grid mark M2, as shown in FIG. 11(b), a long line mark MY extending in the Y-axis direction is arranged at a required pitch ΛY in the X-axis direction Form. The mark M may include, for example, a grid mark M3, which is a long line mark ML extending in a first direction crossing both the X-axis direction and the Y-axis direction as shown in FIG. 11(c). , Formed in such a manner that they are arranged at a required pitch ΛL along a second direction crossing the first direction. Of course, the mark M may include a mark different from that shown in FIGS. 11(a) to 11(c).
標記M用於設定（換言之，校正、校準或調整）掃描式電子顯微鏡SEMa的動作狀態。因此，亦可將退避構件223稱為基準板。具體而言，束照射裝置1經由真空區域VSP對標記M照射電子束EB。進而，束照射裝置1使用電子檢測器116，檢測藉由電子束EB對標記M的照射而產生的電子（例如反射電子及散射電子的至少一者）。控制裝置4基於電子檢測器116的檢測結果，來確定掃描式電子顯微鏡SEMa的特性。控制裝置4基於所確定的掃描式電子顯微鏡SEMa的特性，來設定掃描式電子顯微鏡SEMa的動作狀態。例如，控制裝置4亦可基於電子檢測器116的檢測結果來確定束照射裝置1照射的電子束EB的特性（例如強度、點徑及焦點位置的至少一個），並基於所確定的電子束EB的狀態，以照射適當特性的電子束EB的方式來設定束照射裝置1的動作狀態。例如，控制裝置4亦可基於電子檢測器116的檢測結果來確定束照射裝置1與平台22a的相對位置，並基於所確定的相對位置來進行束照射裝置1與平台22a的對位。例如，控制裝置4亦可基於電子檢測器116的檢測結果來確定束照射裝置1所形成的真空區域VSP的特性（例如真空度及形成位置的至少一個），並基於所確定的真空區域VSP的狀態，以形成適當特性的真空區域VSP的方式來設定與形成真空區域VSP相關的裝置（例如束照射裝置1、間隔調整系統14、平台驅動系統23及泵系統5的至少一個）的動作狀態。The mark M is used to set (in other words, correct, calibrate, or adjust) the operating state of the scanning electron microscope SEMa. Therefore, the retreat member 223 may be referred to as a reference plate. Specifically, the beam irradiation device 1 irradiates the mark M with the electron beam EB via the vacuum region VSP. Furthermore, the beam irradiation device 1 uses the electron detector 116 to detect electrons (for example, at least one of reflected electrons and scattered electrons) generated by the irradiation of the mark M with the electron beam EB. The control device 4 determines the characteristics of the scanning electron microscope SEMa based on the detection result of the electron detector 116. The control device 4 sets the operating state of the scanning electron microscope SEMa based on the determined characteristics of the scanning electron microscope SEMa. For example, the control device 4 may also determine the characteristics of the electron beam EB irradiated by the beam irradiation device 1 (eg, at least one of intensity, spot diameter, and focal position) based on the detection result of the electron detector 116, and based on the determined electron beam EB The operating state of the beam irradiation device 1 is set such that the electron beam EB with appropriate characteristics is irradiated. For example, the control device 4 may determine the relative position of the beam irradiation device 1 and the platform 22a based on the detection result of the electronic detector 116, and perform the alignment of the beam irradiation device 1 and the platform 22a based on the determined relative position. For example, the control device 4 may also determine the characteristics of the vacuum region VSP formed by the beam irradiation device 1 (eg, at least one of the degree of vacuum and the formation position) based on the detection result of the electron detector 116, and based on the determined vacuum region VSP The state sets the operation state of the device (for example, at least one of the beam irradiation device 1, the interval adjustment system 14, the stage drive system 23, and the pump system 5) related to the formation of the vacuum region VSP with appropriate characteristics.
由於標記M形成於退避構件223，故而為了設定掃描式電子顯微鏡SEMa的動作狀態，掃描式電子顯微鏡SEMa使用處於退避狀態的束照射裝置1向標記M照射電子束EB。即，束照射裝置1於退避狀態下向標記M照射電子束EB。束照射裝置1於與退避構件223相向的狀態下向標記M照射電子束EB。束照射裝置1於在與退避構件223之間形成有真空區域VSP的狀態下向標記M照射電子束EB。因此，於如圖12（a）所示，於開始設定掃描式電子顯微鏡SEMa的動作狀態之前束照射裝置1處於非退避狀態的情形時，平台驅動系統23使平台22沿XY平面移動，如圖12（b）所示，使束照射裝置1的狀態自非退避狀態向退避狀態切換。此時，於束照射裝置1與於試樣W之間已形成有真空區域VSP的情形時，如上文所述，間隔調整系統14及平台驅動系統23的至少一者亦能以適當維持真空區域VSP的方式，調整Z軸方向上的束照射裝置1相對於平台22a的相對位置。其結果，於束照射裝置1的狀態自非退避狀態向退避狀態切換的前後，維持真空區域VSP。即，束照射裝置1維持於與試樣W及退避構件223的至少一者之間持續形成有真空區域VSP，而相對於平台22a移動。另一方面，於開始設定掃描式電子顯微鏡SEMa的動作狀態之前束照射裝置1已處於退避狀態的情形時，平台驅動系統23亦可不使平台22a移動。Since the mark M is formed on the retracting member 223, in order to set the operating state of the scanning electron microscope SEMa, the scanning electron microscope SEMa uses the beam irradiation device 1 in the retracted state to irradiate the mark M with the electron beam EB. That is, the beam irradiation device 1 irradiates the mark M with the electron beam EB in the retracted state. The beam irradiation device 1 irradiates the mark M with the electron beam EB in a state facing the retreat member 223. The beam irradiation device 1 irradiates the mark M with the electron beam EB in a state where the vacuum region VSP is formed between the retreat member 223. Therefore, as shown in FIG. 12(a), when the beam irradiation device 1 is in the non-retracted state before starting to set the operating state of the scanning electron microscope SEMa, the platform driving system 23 moves the platform 22 along the XY plane, as shown in FIG. As shown in 12(b), the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state. At this time, when the vacuum region VSP is already formed between the beam irradiation device 1 and the sample W, as described above, at least one of the interval adjustment system 14 and the platform driving system 23 can also maintain the vacuum region properly With the VSP method, the relative position of the beam irradiation device 1 in the Z-axis direction relative to the stage 22a is adjusted. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state. That is, the beam irradiation device 1 is maintained with the vacuum region VSP continuously formed between at least one of the sample W and the retreat member 223, and moves relative to the stage 22a. On the other hand, when the beam irradiation device 1 is already in the retreat state before starting to set the operating state of the scanning electron microscope SEMa, the stage drive system 23 may not move the stage 22a.
其後，如圖12（c）所示，束照射裝置1位於對標記區域MA可照射電子束EB的位置之後，束照射裝置1對標記區域MA照射電子束EB。即，束照射裝置1對形成於標記區域MA的標記M照射電子束EB。此時，束照射裝置1經由面向標記區域MA的真空區域VSP而向標記M照射電子束EB。其後，控制裝置4基於電子檢測器116的檢測結果，來設定掃描式電子顯微鏡SEMa的動作狀態。於設定掃描式電子顯微鏡SEMa的動作狀態的設定期間中，如圖12（c）所示，束照射裝置1的狀態維持退避狀態。其結果，於設定間中，如圖12（c）所示，束照射裝置1於與退避構件223之間（尤其是於與標記區域MA之間）持續形成真空區域VSP。然而，於向標記M照射電子束EB的束照射期間以外的期間中，束照射裝置1亦可未必與退避構件223（尤其是標記區域MA）相向。例如，若藉由對標記M照射電子束EB而產生的電子的、由電子檢測器116進行的檢測於束照射期間中完成，則於基於電子檢測器116的檢測結果而控制裝置4實際設定掃描式電子顯微鏡SEMa的動作狀態的期間中，束照射裝置1亦可不與退避構件223相向。因此，亦可於設定期間中的束照射期間中，束照射裝置1的狀態維持退避狀態，另一方面，於設定期間中的束照射期間以外的期間的至少一部分中，束照射裝置1的狀態成為非退避狀態。Thereafter, as shown in FIG. 12( c ), after the beam irradiation device 1 is located at a position where the electron beam EB can be irradiated to the marking area MA, the beam irradiation device 1 irradiates the marking area MA with the electron beam EB. That is, the beam irradiation device 1 irradiates the mark M formed in the mark area MA with the electron beam EB. At this time, the beam irradiation device 1 irradiates the mark M with the electron beam EB via the vacuum area VSP facing the mark area MA. Thereafter, the control device 4 sets the operating state of the scanning electron microscope SEMa based on the detection result of the electron detector 116. During the setting period for setting the operating state of the scanning electron microscope SEMa, as shown in FIG. 12( c ), the state of the beam irradiation device 1 is maintained in the retracted state. As a result, in the setting room, as shown in FIG. 12( c ), the beam irradiation device 1 continues to form the vacuum region VSP between the retreat member 223 (especially between the mark region MA). However, in a period other than the beam irradiation period in which the mark M is irradiated with the electron beam EB, the beam irradiation device 1 may not necessarily face the retreat member 223 (especially the mark area MA). For example, if the detection by the electron detector 116 of electrons generated by irradiating the mark M with the electron beam EB is completed during the beam irradiation period, the control device 4 actually sets the scan based on the detection result of the electron detector 116 During the operation state of the electron microscope SEMa, the beam irradiation device 1 does not need to face the retreat member 223. Therefore, during the beam irradiation period in the set period, the state of the beam irradiation apparatus 1 can be maintained in the retracted state. On the other hand, in at least a part of the period other than the beam irradiation period in the set period, the state of the beam irradiation apparatus 1 Become a non-backoff state.
然後，掃描式電子顯微鏡SEMa的動作狀態的設定完成之後（或向標記M的電子束EB的照射完成之後），平台驅動系統23使平台22a沿XY平面移動，如圖12（d）所示，使束照射裝置1的狀態自退避狀態向非退避狀態切換。此時，如上文所述，間隔調整系統14及平台驅動系統23的至少一者亦能以適當維持真空區域VSP的方式，調整Z軸方向上的束照射裝置1相對於平台22a的相對位置。其結果，於束照射裝置1的狀態自退避狀態向非退避狀態切換的前後，維持真空區域VSP。即，束照射裝置1維持於與試樣W及退避構件223的至少一者之間持續形成有真空區域VSP，而相對於平台22a移動。因此，以面向退避構件223的方式形成的真空區域VSP以自退避構件223向試樣W移動的方式，相對於平台22a而相對移動。Then, after the setting of the operating state of the scanning electron microscope SEMa is completed (or after the irradiation of the electron beam EB of the mark M is completed), the platform driving system 23 moves the platform 22a along the XY plane, as shown in FIG. 12(d), The state of the beam irradiation device 1 is switched from the retreat state to the non-retreat state. At this time, as described above, at least one of the interval adjustment system 14 and the stage driving system 23 can also adjust the relative position of the beam irradiation device 1 in the Z-axis direction relative to the stage 22a in such a manner as to maintain the vacuum region VSP appropriately. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the retreat state to the non-retreat state. That is, the beam irradiation device 1 is maintained with the vacuum region VSP continuously formed between at least one of the sample W and the retreat member 223, and moves relative to the stage 22a. Therefore, the vacuum region VSP formed so as to face the retreat member 223 moves relatively to the stage 22a so as to move from the retreat member 223 to the sample W.
然後，束照射裝置1的狀態變為非退避狀態後，掃描式電子顯微鏡SEMa向試樣W照射電子束EB而計測試樣W的狀態。即，束照射裝置1經由在與試樣W之間形成的真空區域VSP而向試樣W照射電子束EB。此時，掃描式電子顯微鏡SEMa的動作狀態已設定，故而掃描式電子顯微鏡SEMa可更適當地計測試樣W的狀態。Then, after the state of the beam irradiation device 1 becomes the non-retracted state, the scanning electron microscope SEMa irradiates the sample W with the electron beam EB to calculate the state of the test sample W. That is, the beam irradiation device 1 irradiates the sample W with the electron beam EB via the vacuum region VSP formed between the sample W. At this time, the operating state of the scanning electron microscope SEMa has been set, so the scanning electron microscope SEMa can more appropriately count the state of the test sample W.
如此，掃描式電子顯微鏡SEMa可維持真空區域VSP而設定掃描式電子顯微鏡SEMa的動作狀態。因此，掃描式電子顯微鏡SEMa亦可不於每當設定掃描式電子顯微鏡SEMa的動作狀態時新形成真空區域VSP。即，掃描式電子顯微鏡SEMa亦可不於設定掃描式電子顯微鏡SEMa的動作狀態之前使束通過空間SPb1～束通過空間SPb3暫且回到大氣壓空間而使束照射裝置1移動至標記區域MA，其後於向標記區域MA照射電子束EB之前將束通過空間SPb1～束通過空間SPb3再次排氣而設為真空空間。其結果，掃描式電子顯微鏡SEMa與需要在每當設定掃描式電子顯微鏡SEMa的動作狀態時新形成真空區域VSP的、比較例的掃描式電子顯微鏡相比較，能以形成真空區域VSP所需要的時間的程度來縮短設定掃描式電子顯微鏡SEMa的動作狀態所需要的時間。即，掃描式電子顯微鏡SEMa的產率提高。In this way, the scanning electron microscope SEMa can maintain the vacuum region VSP and set the operating state of the scanning electron microscope SEMa. Therefore, the scanning electron microscope SEMa does not need to newly form the vacuum region VSP every time the operating state of the scanning electron microscope SEMa is set. That is, the scanning electron microscope SEMa may not temporarily return the beam passing space SPb1 to the beam passing space SPb3 to the atmospheric pressure space before setting the operating state of the scanning electron microscope SEMa to move the beam irradiation device 1 to the marking area MA, and thereafter Before irradiating the marking area MA with the electron beam EB, the beam passing space SPb1 to the beam passing space SPb3 are evacuated again to be a vacuum space. As a result, the scanning electron microscope SEMa can be compared with the scanning electron microscope of the comparative example in which the vacuum region VSP needs to be newly formed every time the operating state of the scanning electron microscope SEMa is set. To reduce the time required to set the operating state of the scanning electron microscope SEMa. That is, the yield of scanning electron microscope SEMa is improved.
再者，標記M亦可形成於與退避構件223不同的構件。例如，亦可於外周構件222的上表面OS設有標記M。另外，亦可將退避構件223的上表面ES用作位置計測裝置15的基準面。Furthermore, the mark M may be formed on a member different from the retreat member 223. For example, the mark M may be provided on the upper surface OS of the outer peripheral member 222. In addition, the upper surface ES of the retreat member 223 may be used as a reference surface of the position measurement device 15.
（3-2）第2變形例
繼而，對第2變形例的掃描式電子顯微鏡SEMb加以說明。掃描式電子顯微鏡SEMb與所述的掃描式電子顯微鏡SEM相比較，於具備平台22b代替平台22的方面不同。掃描式電子顯微鏡SEMb的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖13（a）及圖13（b），一方面對第2變形例的平台22b加以說明。圖13（a）為表示第2變形例的平台22b的結構的剖面圖，圖13（b）為表示第2變形例的平台22b的結構的平面圖。(3-2) Second modification
Next, the scanning electron microscope SEMb of the second modification will be described. The scanning electron microscope SEMb is different from the scanning electron microscope SEM described above in that a platform 22b is provided instead of the platform 22. The other structures of the scanning electron microscope SEMb can also be the same as the scanning electron microscope SEM. Therefore, the platform 22b of the second modification will be described below with reference to FIGS. 13(a) and 13(b). FIG. 13( a) is a cross-sectional view showing the structure of the platform 22 b of the second modification, and FIG. 13( b) is a plan view showing the structure of the platform 22 b of the second modification.
如圖13（a）及圖13（b）所示，平台22b與所述的平台22相比較，於在保持構件221的保持面HS形成有排氣口2231b的方面不同。平台22b的其他結構亦可與平台22相同。As shown in FIGS. 13( a) and 13 (b ), the platform 22 b differs from the platform 22 described above in that the exhaust port 2231 b is formed on the holding surface HS of the holding member 221. The other structure of the platform 22b may also be the same as the platform 22.
排氣口2231b形成於保持構件221的保持面HS的外緣附近。具體而言，如上文所述，於沿著XY平面的方向上，保持面HS的尺寸（例如直徑）大於試樣W的尺寸（例如直徑）。因此，若保持構件221保持試樣W，則於保持面HS的外緣附近，試樣W與外周構件222不密接。即，保持構件221於在試樣W與外周構件222之間（即，試樣W的表面WSu與外周構件222的上表面OS之間）確保有空間的狀態下保持試樣W。排氣口2231b以於試樣W與外周構件222之間的空間中，面向試樣W與退避構件223之間的空間（亦可稱為間隙或空隙）SPg的至少一部分的方式形成。保持面HS中面向空間SPg的部分實際上不保持試樣W。因此，排氣口2231b形成於保持面HS中實際上不保持試樣W的部分的至少一部分（即，面向空間SPg的部分）。如上文所述，退避構件223於沿著XY平面的一個方向上與保持構件221鄰接，故而排氣口2231b形成於保持面HS中存在退避構件223的一個方向的外緣附近。The exhaust port 2231b is formed near the outer edge of the holding surface HS of the holding member 221. Specifically, as described above, the size (eg, diameter) of the holding surface HS is larger than the size (eg, diameter) of the sample W in the direction along the XY plane. Therefore, if the holding member 221 holds the sample W, the sample W is not in close contact with the outer peripheral member 222 near the outer edge of the holding surface HS. That is, the holding member 221 holds the sample W in a state where there is a space between the sample W and the outer peripheral member 222 (that is, between the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222 ). The exhaust port 2231b is formed so as to face at least a part of the space (also referred to as a gap or void) SPg between the sample W and the retreat member 223 in the space between the sample W and the outer peripheral member 222. The portion of the holding surface HS facing the space SPg does not actually hold the sample W. Therefore, the exhaust port 2231b is formed in at least a part of the holding surface HS that does not actually hold the sample W (that is, a portion facing the space SPg). As described above, the retreating member 223 is adjacent to the holding member 221 in one direction along the XY plane, so the exhaust port 2231b is formed near the outer edge of the holding surface HS in which the retreating member 223 exists in one direction.
排氣口2231b於保持面HS中以按離散的排列圖案而離散地排列的方式形成有多個。具體而言，排氣口2231b於保持面HS中，以按依照空間SPg的分佈圖案的排列圖案而排列的方式形成有多個。圖13（b）所示的例子中，於俯視時具有圓形的形狀的試樣W與規定圓形的收容空間SPw的退避構件223之間的空間SPg於俯視時呈圓周狀分佈，故而排氣口2231b以按沿著該圓周的離散的排列圖案而排列的方式形成有多個。多個排氣口2231b的沿著圓周的間隔可為等間隔，亦可為不等間隔。然而，亦可不形成有多個排氣口2231b。例如，亦可形成有單一的排氣口2231b。例如，排氣口2231b亦可於保持面HS中以按連續的分佈圖案而連續地分佈的方式形成。例如，排氣口2231b亦可於保持面HS中以連續地分佈的排氣槽的形式形成。作為一例，排氣口2231b亦可為環狀。A plurality of exhaust ports 2231b are formed in the holding surface HS so as to be arranged discretely in a discrete arrangement pattern. Specifically, a plurality of exhaust ports 2231b are formed in the holding surface HS so as to be arranged in accordance with the arrangement pattern of the distribution pattern of the space SPg. In the example shown in FIG. 13( b ), the space SPg between the sample W having a circular shape in plan view and the retreat member 223 defining the storage space SPw in a circular shape is circumferentially distributed in plan view, so The air ports 2231b are formed in a plurality of discrete arrangement patterns along the circumference. The intervals along the circumference of the plurality of exhaust ports 2231b may be equal intervals or unequal intervals. However, a plurality of exhaust ports 2231b may not be formed. For example, a single exhaust port 2231b may be formed. For example, the exhaust port 2231b may be formed in the holding surface HS so as to be continuously distributed in a continuous distribution pattern. For example, the exhaust port 2231b may be formed in the holding surface HS as a continuously distributed exhaust groove. As an example, the exhaust port 2231b may have a ring shape.
對於排氣口2231b，經由配管2232b而連結有泵系統5所具備的真空泵53。然而，對於排氣口2231b，亦可經由配管2232b而連結有泵系統5所具備的真空泵51及真空泵52的至少一者。真空泵53將空間SPg排氣而可減壓。再者，亦可將真空泵53（或真空泵51及真空泵52的至少一者）稱為排氣裝置。A vacuum pump 53 included in the pump system 5 is connected to the exhaust port 2231b via a pipe 2232b. However, at least one of the vacuum pump 51 and the vacuum pump 52 included in the pump system 5 may be connected to the exhaust port 2231b through the piping 2232b. The vacuum pump 53 evacuates the space SPg to reduce the pressure. In addition, the vacuum pump 53 (or at least one of the vacuum pump 51 and the vacuum pump 52) may also be referred to as an exhaust device.
真空泵53於束照射裝置1的狀態自退避狀態向非退避狀態切換、或自非退避狀態向退避狀態切換的期間的至少一部分中，將空間SPg排氣。尤其如圖14所示，真空泵53於束照射裝置1的狀態處於中間狀態的期間的至少一部分中，將空間SPg排氣。具體而言，如圖14所示，真空泵53於束照射裝置1形成面向試樣W與退避構件223的邊界（即，面向空間SPg）的真空區域VSP的期間的至少一部分中，將空間SPg排氣。即，真空泵53於試樣W與退避構件223的邊界（即，空間SPg）、和真空區域VSP的至少一部分於Z軸方向上重合的期間的至少一部分中，將空間SPg排氣。The vacuum pump 53 evacuates the space SPg during at least a part of the period when the state of the beam irradiation device 1 is switched from the retreat state to the non-retreat state or from the non-retracted state to the retreat state. In particular, as shown in FIG. 14, the vacuum pump 53 evacuates the space SPg during at least part of the period when the state of the beam irradiation device 1 is in the intermediate state. Specifically, as shown in FIG. 14, the vacuum pump 53 discharges the space SPg in at least a portion of the period during which the beam irradiation device 1 forms the vacuum region VSP facing the boundary between the sample W and the retreating member 223 (that is, facing the space SPg). gas. That is, the vacuum pump 53 evacuates the space SPg in at least a part of a period in which the boundary between the sample W and the retreating member 223 (that is, the space SPg) and at least a part of the vacuum region VSP overlap in the Z-axis direction.
此時，真空泵53亦可將空間SPg中至少面向真空區域VSP或位於附近的至少一部分空間部分排氣，另一方面，不將空間SPg中至少不面向真空區域VSP或遠離的至少另一部分空間部分排氣。於該情形時，例如掃描式電子顯微鏡SEM亦可對以與多個排氣口2231b分別對應的方式配置於配管2232b中的未圖示的閥進行控制，將面向空間SPg中至少面向真空區域VSP或位於附近的至少一部分空間部分的排氣口2231b與真空泵53連通，另一方面，將面向空間SPg中至少不面向真空區域VSP或遠離的至少另一部分空間部分的排氣口2231b自真空泵53阻斷。即，亦可使多個排氣口2231b中於沿著試樣W的表面WSu的方向上位於形成有真空區域VSP的範圍內的一個排氣口2231b將空間SPg排氣，另一方面，多個排氣口2231b中於沿著試樣W的表面WSu的方向上不位於形成有真空區域VSP的範圍內的其他排氣口2231b不將空間SPg排氣。於該情形時，典型而言，於沿著試樣W的表面WSu的方向上，將空間SPg排氣的一個排氣口2231b位於較不將空間SPg排氣的其他排氣口2231b而更靠近真空區域VSP的位置。At this time, the vacuum pump 53 may also exhaust at least a part of the space SPg facing at least the vacuum region VSP or at least a part of the space nearby, on the other hand, at least another part of the space SPg not facing the vacuum region VSP or at least away exhaust. In this case, for example, a scanning electron microscope SEM may control a valve (not shown) disposed in the piping 2232b so as to correspond to the plurality of exhaust ports 2231b, and face at least the vacuum region VSP in the space SPg Or, the exhaust port 2231b of at least a part of the space located nearby is in communication with the vacuum pump 53, and on the other hand, the exhaust port 2231b facing at least another part of the space in the space SPg that does not face the vacuum region VSP or away is blocked from the vacuum pump 53 Break. That is, one of the plurality of exhaust ports 2231b may evacuate the space SPg through one exhaust port 2231b in the range along the surface WSu of the sample W where the vacuum region VSP is formed. Among the two exhaust ports 2231b, the other exhaust ports 2231b that do not lie within the range where the vacuum region VSP is formed in the direction along the surface WSu of the sample W do not exhaust the space SPg. In this case, typically, one exhaust port 2231b that exhausts the space SPg is located closer to the other exhaust port 2231b that does not exhaust the space SPg in the direction along the surface WSu of the sample W The location of the vacuum area VSP.
其結果，於束照射裝置1處於中間狀態的情形時，更適當地維持真空區域VSP。然而，若假設未形成有排氣口2231b，則於束照射裝置1處於中間狀態的情形時，有氣體經由空間SPg而向面向空間SPg的真空區域VSP流入的可能性。尤其是空間SPg越大（例如，試樣W與退避構件223之間的距離越大），氣體經由空間SPg向真空區域VSP流入的可能性越變大。其結果，有真空區域VSP的真空度降低的可能性。然而，第2變形例中，空間SPg經排氣而減壓，故而氣體經由空間SPg而向真空區域VSP流入的可能性相對變小。因此，適當抑制由氣體經由空間SPg流入所引起的、真空區域SP的真空度降低。As a result, when the beam irradiation device 1 is in the intermediate state, the vacuum region VSP is maintained more appropriately. However, assuming that the exhaust port 2231b is not formed, when the beam irradiation device 1 is in an intermediate state, there is a possibility that gas flows into the vacuum region VSP facing the space SPg through the space SPg. In particular, the larger the space SPg (for example, the larger the distance between the sample W and the retreating member 223), the greater the possibility that gas will flow into the vacuum region VSP via the space SPg. As a result, there is a possibility that the vacuum degree of the vacuum region VSP is reduced. However, in the second modification, the space SPg is decompressed by exhausting gas, so the possibility of gas flowing into the vacuum region VSP through the space SPg is relatively small. Therefore, the decrease in the degree of vacuum in the vacuum area SP caused by the inflow of gas through the space SPg is appropriately suppressed.
再者，真空泵53亦可於未切換束照射裝置1的狀態的狀態下，典型而言束照射裝置1為退避狀態或束照射裝置1為非退避狀態的期間的至少一部分中，將空間SPg排氣。此處，真空泵53亦可於掃描式電子顯微鏡SEM的整個運行期間中將空間SPg排氣。另外，真空泵53亦可於掃描式電子顯微鏡SEM的運行期間中，除了將試樣W搬入搬出的期間以外，將空間SPg排氣。In addition, the vacuum pump 53 may discharge the space SPg in at least a part of the period when the beam irradiation device 1 is in the retracted state or the beam irradiation device 1 is in the non-retracted state without switching the state of the beam irradiation device 1 gas. Here, the vacuum pump 53 may also exhaust the space SPg during the entire operation period of the scanning electron microscope SEM. In addition, during the operation period of the scanning electron microscope SEM, the vacuum pump 53 may evacuate the space SPg except for the period during which the sample W is carried in and out.
再者，所述說明中，排氣口2231b形成於保持構件221的保持面HS。然而，排氣口2231b亦可形成於可將空間SPg排氣的任意位置。排氣口2231b亦可形成於面向空間SPg的任意位置。例如，如圖15所示，排氣口2231b亦可形成於退避構件223的內面（即，面向空間SPg的面）。In the above description, the exhaust port 2231b is formed on the holding surface HS of the holding member 221. However, the exhaust port 2231b may be formed at any position where the space SPg can be exhausted. The exhaust port 2231b may be formed at any position facing the space SPg. For example, as shown in FIG. 15, the exhaust port 2231b may be formed on the inner surface of the retreat member 223 (that is, the surface facing the space SPg).
另外，所述說明中，排氣口2231b以於試樣W與外周構件222之間的空間中，面向試樣W與退避構件223之間的空間SPg的至少一部分的方式形成。然而，亦可如圖16所示，排氣口2231b以於試樣W與外周構件222之間的空間中，面向試樣W與退避構件223之間的空間SPg以外的其他空間SPg'的至少一部分的方式形成。於該情形時，真空泵53亦可於與束照射裝置1的狀態自退避狀態向非退避狀態切換、或自非退避狀態向退避狀態切換的期間不同的期間的至少一部分中，將空間SPg排氣。例如，真空泵53亦可於束照射裝置1形成面向試樣W與外周構件222的邊界的真空區域VSP的期間的至少一部分中，將試樣W與外周構件222之間的空間（尤其是試樣W與外周構件222之間的空間中，於Z軸方向上與真空區域VSP的至少一部分重合的空間部分）排氣。進而，於該情形時，外周構件222亦可不具備退避構件223。於外周構件222不具備退避構件223的情形時，亦可不進行利用所述的退避構件223的動作。In the above description, the exhaust port 2231b is formed so as to face at least a part of the space SPg between the sample W and the retreat member 223 in the space between the sample W and the outer peripheral member 222. However, as shown in FIG. 16, the exhaust port 2231b may face at least the space SPg′ other than the space SPg between the sample W and the retreat member 223 in the space between the sample W and the outer peripheral member 222 Partially formed. In this case, the vacuum pump 53 may evacuate the space SPg in at least a part of a period different from the period when the state of the beam irradiation device 1 is switched from the retracted state to the non-retracted state, or from the non-retracted state to the retracted state. . For example, the vacuum pump 53 may change the space between the sample W and the outer peripheral member 222 (especially the sample) in at least a portion of the period during which the beam irradiation device 1 forms the vacuum region VSP facing the boundary between the sample W and the outer peripheral member 222 In the space between W and the outer peripheral member 222, a portion of the space that overlaps with at least a part of the vacuum region VSP in the Z-axis direction is exhausted. Furthermore, in this case, the outer peripheral member 222 may not include the retreat member 223. In the case where the outer peripheral member 222 does not include the retreat member 223, the operation using the retreat member 223 may not be performed.
（3-3）第3變形例
繼而，對第3變形例的掃描式電子顯微鏡SEMc加以說明。掃描式電子顯微鏡SEMc與所述的掃描式電子顯微鏡SEM相比較，於利用平台22的試樣W的保持方法不同的方面不同。掃描式電子顯微鏡SEMc的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖17（a）及圖17（b），一方面對第3變形例中的利用平台22的試樣W的保持方法進行說明。圖17（a）為表示第3變形例中平台22上保持的試樣W的剖面圖，圖17（b）為表示第3變形例中平台22上保持的試樣W的平面圖。(3-3) The third modification
Next, the scanning electron microscope SEMc of the third modification will be described. The scanning electron microscope SEMc is different from the scanning electron microscope SEM described above in that the method of holding the sample W using the stage 22 is different in that it is different. The other structures of the scanning electron microscope SEMc can also be the same as the scanning electron microscope SEM. Therefore, with reference to FIGS. 17( a) and 17 (b ), the method of holding the sample W using the stage 22 in the third modification will be described below. FIG. 17( a) is a cross-sectional view showing the sample W held on the stage 22 in the third modification, and FIG. 17( b) is a plan view showing the sample W held on the stage 22 in the third modification.
如圖17（a）及圖17（b）所示，於第3變形例中，平台22以試樣W與退避構件223之間的間隔G1、和試樣W與外周構件222中的退避構件223以外的部分之間的間隔G2不同的方式，保持試樣W。即，平台22代替以保持面HS與試樣W成為同心的方式保持試樣W，而以試樣W相對於保持面HS偏移地分佈的方式保持試樣W。圖17（a）及圖17（b）所示的例子中，平台22以試樣W與退避構件223之間的間隔G1小於試樣W與外周構件222中位於和退避構件223相反側的部分之間的間隔G2的方式，保持試樣W。As shown in FIGS. 17( a) and 17 (b ), in the third modification, the platform 22 is at the interval G1 between the sample W and the retreat member 223 and the retreat member between the sample W and the outer peripheral member 222 The sample W is held so that the interval G2 between the parts other than 223 is different. That is, instead of holding the sample W so that the holding surface HS and the sample W are concentric, the stage 22 holds the sample W so that the sample W is distributed with an offset from the holding surface HS. In the examples shown in FIGS. 17( a) and 17 (b ), the platform 22 has a gap G1 between the sample W and the retreat member 223 that is smaller than the portion of the sample W and the outer peripheral member 222 that is on the opposite side of the retreat member 223 The sample W is held in such a way that the interval is G2.
若平台22如此保持試樣W，則與以保持面HS與試樣W成為同心的方式平台22保持試樣W的情形相比較，試樣W與退避構件223之間的空間SPg變小的可能性相對變高。若空間SPg變小，則氣體經由空間SPg向真空區域VSP流入的可能性變小。因此，適當抑制由氣體經由空間SPg流入所引起的、真空區域SP的真空度降低。If the platform 22 holds the sample W in this way, compared with the case where the platform 22 holds the sample W so that the holding surface HS and the sample W are concentric, the space SPg between the sample W and the retreat member 223 may become smaller Sex is relatively high. When the space SPg becomes smaller, the possibility of gas flowing into the vacuum region VSP via the space SPg becomes smaller. Therefore, the decrease in the degree of vacuum in the vacuum area SP caused by the inflow of gas through the space SPg is appropriately suppressed.
再者，保持面HS的形狀亦可與試樣W不同。In addition, the shape of the holding surface HS may be different from the sample W.
（3-4）第4變形例
繼而，對第4變形例的掃描式電子顯微鏡SEMd加以說明。掃描式電子顯微鏡SEMd與所述的掃描式電子顯微鏡SEM相比較，於具備束照射裝置1d代替束照射裝置1的方面不同。掃描式電子顯微鏡SEMd的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖18～圖19，一方面對第4變形例的束照射裝置1d加以說明。圖18及圖19分別為表示第4變形例的束照射裝置1d的結構的剖面圖。(3-4) Fourth modification
Next, the scanning electron microscope SEMd of the fourth modification will be described. The scanning electron microscope SEMd is different from the scanning electron microscope SEM described above in that it includes a beam irradiation device 1 d instead of the beam irradiation device 1. The other structure of the scanning electron microscope SEMd can also be the same as the scanning electron microscope SEM. Therefore, the beam irradiation device 1d according to the fourth modification will be described below with reference to FIGS. 18 to 19 on the one hand. 18 and 19 are cross-sectional views showing the configuration of a beam irradiation device 1d according to a fourth modification.
如圖18及圖19所示，束照射裝置1d與所述的束照射裝置1相比較，於在束照射空間SPb1內具備於電子束EB的路徑中可插入或脫除的阻斷構件151d及阻斷構件152d的方面不同。束照射裝置1d的其他結構亦可與束照射裝置1相同。As shown in FIGS. 18 and 19, the beam irradiation device 1d is provided with a blocking member 151d that can be inserted or removed in the path of the electron beam EB in the beam irradiation space SPb1 compared with the above-mentioned beam irradiation device 1. The blocking member 152d differs in aspects. The other structure of the beam irradiation apparatus 1d may be the same as that of the beam irradiation apparatus 1.
阻斷構件151d及阻斷構件152d各自為可阻斷電子束EB（即，使其不通過）的構件。阻斷構件151d配置於電子槍113與電磁透鏡114、物鏡115及電子檢測器116之間可阻斷電子束EB般的位置。阻斷構件152d配置於電磁透鏡114、物鏡115及電子檢測器116與射出口119之間可阻斷電子束EB般的位置。然而，阻斷構件151d及阻斷構件152d各自亦可配置於可阻斷電子束EB的任意位置。Each of the blocking member 151d and the blocking member 152d is a member that can block the electron beam EB (that is, prevent it from passing). The blocking member 151d is disposed between the electron gun 113 and the electromagnetic lens 114, the objective lens 115, and the electron detector 116 to block the electron beam EB. The blocking member 152d is disposed between the electromagnetic lens 114, the objective lens 115, and the electron detector 116 and the emission port 119 so as to block the electron beam EB. However, each of the blocking member 151d and the blocking member 152d may be disposed at any position that can block the electron beam EB.
阻斷構件151d及阻斷構件152d各自的狀態於控制裝置4的控制下，於插入至電子束EB的路徑中的狀態、與未插入至電子束EB的路徑中的狀態之間可切換。具體而言，例如，控制裝置4於束照射裝置1應照射電子束EB的時序，如圖18所示，以阻斷構件151d及阻斷構件152d各自的狀態成為未插入至電子束EB的路徑中的狀態的方式，控制阻斷構件151d及阻斷構件152d（例如，控制可移動的未圖示的驅動系統）。其結果，經由作為真空空間的束通過空間SPb1～束通過空間SPb3而電子束EB照射於試樣W（或所述的退避構件223的標記區域MA）。另一方面，例如控制裝置4於束照射裝置1不應照射電子束EB的時序，如圖19所示，以阻斷構件151d及阻斷構件152d各自的狀態成為插入至電子束EB的路徑中的狀態的方式，控制阻斷構件151d及阻斷構件152d。其結果，不經由束通過空間SPb1～束通過空間SPb3將電子束EB照射於試樣W。The state of each of the blocking member 151d and the blocking member 152d can be switched between a state inserted into the path of the electron beam EB and a state not inserted into the path of the electron beam EB under the control of the control device 4. Specifically, for example, at a timing when the beam irradiation device 1 should irradiate the electron beam EB, as shown in FIG. 18, the blocking member 151d and the blocking member 152d become paths not inserted into the electron beam EB as shown in FIG. In the state of the middle, the blocking member 151d and the blocking member 152d are controlled (for example, a movable drive system (not shown) is controlled). As a result, the electron beam EB is irradiated to the sample W (or the marked area MA of the retreat member 223 described above) via the beam passing space SPb1 to the beam passing space SPb3 which is a vacuum space. On the other hand, for example, when the control device 4 should not irradiate the electron beam EB at the time when the beam irradiation device 1 should irradiate, as shown in FIG. 19, the blocking member 151d and the blocking member 152d are inserted into the path of the electron beam EB Mode, the blocking member 151d and the blocking member 152d are controlled. As a result, the electron beam EB is irradiated to the sample W without passing through the beam passing space SPb1 to the beam passing space SPb3.
作為束照射裝置1應照射電子束EB的時序的一例，例如可列舉：掃描式電子顯微鏡SEMd計測試樣W的狀態的時序、束照射裝置1與試樣W相向的時序（即，束照射裝置1處於非退避狀態的時序）、及處於退避狀態的束照射裝置1與退避構件223的標記區域MA相向的時序。另一方面，作為束照射裝置1不應照射電子束EB的時序的一例，例如可列舉：掃描式電子顯微鏡SEMd不計測試樣W的狀態的時序、束照射裝置1不與試樣W相向的時序、束照射裝置1不與退避構件223的標記區域MA相向的時序、及束照射裝置1處於退避狀態的時序。As an example of the timing at which the beam irradiation device 1 should irradiate the electron beam EB, for example, the timing of the state of the test sample W by the scanning electron microscope SEMd meter, and the timing at which the beam irradiation device 1 and the sample W are opposed (ie, the beam irradiation device 1 Timing in the non-retracted state), and the timing when the beam irradiation device 1 in the retracted state and the marking area MA of the retracted member 223 face each other. On the other hand, as an example of the timing when the beam irradiation device 1 should not irradiate the electron beam EB, for example, the timing when the scanning electron microscope SEMd does not count the state of the test sample W, and the beam irradiation device 1 does not face the sample W Timing, timing when the beam irradiation device 1 does not face the marking area MA of the retreat member 223, and timing when the beam irradiation device 1 is in the retracted state.
如此，第4變形例的掃描式電子顯微鏡SEMd可於不使電子槍113停止的情況下，使束照射裝置1的狀態於照射電子束EB的狀態、與不照射電子束EB的狀態之間切換。In this manner, the scanning electron microscope SEMd of the fourth modification can switch the state of the beam irradiation device 1 between the state of irradiating the electron beam EB and the state of not irradiating the electron beam EB without stopping the electron gun 113.
再者，控制裝置4亦可控制阻斷構件151d及阻斷構件152d，以使阻斷構件151d及阻斷構件152d的任一者的狀態成為未插入至電子束EB的路徑中的狀態，另一方面，阻斷構件151d及阻斷構件152d的任意另一者的狀態成為插入至電子束EB的路徑中的狀態。例如，於束照射裝置1不與試樣W及退避構件223兩者相向的情形時，束照射裝置1於臨近的將來開始照射電子束EB的可能性相對較小。因此，於該情形時，控制裝置4亦可控制阻斷構件151d及阻斷構件152d，以使阻斷構件151d及阻斷構件152d兩者的狀態成為插入至電子束EB的路徑中的態。另一方面，例如於束照射裝置1與退避構件223相向的情形（其結果，例如上文所述般將平台22保持的試樣W搬入搬出或設定掃描式電子顯微鏡SEM的動作狀態的情形）時，束照射裝置1於臨近的將來開始照射電子束EB的可能性相對較大。然而，於束照射裝置1與退避構件223相向的情形時，束照射裝置1不應照射電子束EB。因此，於該情形時，控制裝置4亦可控制阻斷構件151d及阻斷構件152d，以使阻斷構件151d的狀態成為未插入至電子束EB的路徑中的狀態，另一方面，阻斷構件152d的狀態成為插入至電子束EB的路徑中的狀態。其結果，自電子槍113發射的電子束EB被阻斷構件152d所阻斷，故而束照射裝置1不向束照射裝置1的外部照射電子束EB。另一方面，阻斷構件151d的狀態成為未插入至電子束EB的路徑中的狀態，故而為了開始照射電子束EB，只要控制阻斷構件152d便足矣。因此，與於束照射裝置1不應照射電子束EB的時序將阻斷構件151d及阻斷構件152d兩者插入至電子束EB的路徑中的情形相比較，可相對較迅速地開始照射電子束EB。Furthermore, the control device 4 may also control the blocking member 151d and the blocking member 152d so that the state of any one of the blocking member 151d and the blocking member 152d is not inserted into the path of the electron beam EB, and the other On the other hand, the state of any one of the blocking member 151d and the blocking member 152d becomes a state of being inserted into the path of the electron beam EB. For example, when the beam irradiation device 1 does not face both the sample W and the retreat member 223, the possibility that the beam irradiation device 1 starts to irradiate the electron beam EB in the near future is relatively small. Therefore, in this case, the control device 4 may also control the blocking member 151d and the blocking member 152d so that the state of both the blocking member 151d and the blocking member 152d is inserted into the path of the electron beam EB. On the other hand, for example, when the beam irradiation device 1 and the retreating member 223 face each other (as a result, for example, the case where the sample W held by the platform 22 is carried in and out or the operating state of the scanning electron microscope SEM is set as described above) At this time, the beam irradiation device 1 is relatively likely to start irradiating the electron beam EB in the near future. However, when the beam irradiation device 1 and the retreating member 223 face each other, the beam irradiation device 1 should not irradiate the electron beam EB. Therefore, in this case, the control device 4 may also control the blocking member 151d and the blocking member 152d so that the state of the blocking member 151d is not inserted into the path of the electron beam EB. On the other hand, the blocking The state of the member 152d becomes a state of being inserted into the path of the electron beam EB. As a result, the electron beam EB emitted from the electron gun 113 is blocked by the blocking member 152d, so the beam irradiation device 1 does not irradiate the electron beam EB to the outside of the beam irradiation device 1. On the other hand, since the state of the blocking member 151d is not inserted into the path of the electron beam EB, it is sufficient to control the blocking member 152d in order to start irradiating the electron beam EB. Therefore, compared with the case where both the blocking member 151d and the blocking member 152d are inserted into the path of the electron beam EB at the timing when the beam irradiation device 1 should not irradiate the electron beam EB, the irradiation of the electron beam can be started relatively quickly EB.
再者，掃描式電子顯微鏡SEMd亦可於束照射裝置1不應照射電子束EB的時序，除了控制阻斷構件151d及阻斷構件152d以外或取而代之，停止電子槍113。即便於該情形時，束照射裝置1亦不會向束照射裝置1的外部照射電子束EB。或者，掃描式電子顯微鏡SEMd亦可除了控制阻斷構件151d及阻斷構件152d以外或取而代之，使用可捕捉電子束EB的捕捉裝置，停止向束照射裝置1的外部的電子束EB的照射。作為此種捕捉裝置的一例，可列舉所謂法拉第杯（Faraday cup）。於該些情形時，掃描式電子顯微鏡SEMd亦可不具備阻斷構件151d及阻斷構件152d。In addition, the scanning electron microscope SEMd may stop the electron gun 113 in addition to or in addition to controlling the blocking member 151d and the blocking member 152d when the beam irradiation device 1 should not irradiate the electron beam EB. Even when this is convenient, the beam irradiation device 1 does not irradiate the electron beam EB to the outside of the beam irradiation device 1. Alternatively, the scanning electron microscope SEMd may, in addition to or instead of the blocking member 151d and the blocking member 152d, use a capturing device capable of capturing the electron beam EB to stop the irradiation of the electron beam EB outside the beam irradiation device 1. As an example of such a capturing device, a so-called Faraday cup can be cited. In these cases, the scanning electron microscope SEMd may not include the blocking member 151d and the blocking member 152d.
阻斷構件151d及阻斷構件152d亦可為於插入至電子束EB的路徑中的狀態下，可將束通過空間SPb1中由阻斷構件151d及阻斷構件152d的至少一者與框體111包圍的空間部分密閉的構件。於該情形時，藉由阻斷構件151d及阻斷構件152d而維持束通過空間SPb1中至少一部分空間部分的真空度。圖19所示的例子中，阻斷構件151d為於插入至電子束EB的路徑中的狀態下，可將束通過空間SPb1中較阻斷構件151d更靠上方的空間部分（具體而言，面向電子槍113的空間部分）密閉的構件。進而，阻斷構件151d為於插入至電子束EB的路徑中的狀態下，可將束通過空間SPb1中較阻斷構件151d更靠下方且較阻斷構件152d更靠上方的空間部分（具體而言，面向電磁透鏡114、物鏡115及電子檢測器116的空間部分）密閉的構件。其結果，阻斷構件151d及阻斷構件152d於插入至電子束EB的路徑中的狀態下，即便暫且中斷利用真空泵51及真空泵52進行的排氣，亦適當維持束通過空間SPb1中的至少一部分空間部分的真空度。進而，自藉由真空泵51及真空泵52再次開始排氣起至束通過空間SPb1的減壓完成為止所需要的時間亦可縮短。The blocking member 151d and the blocking member 152d may be inserted into the path of the electron beam EB, the beam passing space SPb1 may include at least one of the blocking member 151d and the blocking member 152d and the frame 111 The enclosed space is partially closed. In this case, the blocking member 151d and the blocking member 152d maintain the vacuum degree of at least a part of the space portion of the beam passing space SPb1. In the example shown in FIG. 19, the blocking member 151d is a portion of the space above the blocking member 151d (specifically, facing the beam passing space SPb1 in a state inserted into the path of the electron beam EB) The space part of the electron gun 113) is a sealed member. Further, the blocking member 151d is a space portion in the state of being inserted into the path of the electron beam EB, the beam passing space SPb1 may be lower than the blocking member 151d and higher than the blocking member 152d (specifically In other words, the space facing the electromagnetic lens 114, the objective lens 115, and the electron detector 116) is a sealed member. As a result, in the state where the blocking member 151d and the blocking member 152d are inserted into the path of the electron beam EB, even if the exhaust by the vacuum pump 51 and the vacuum pump 52 is temporarily interrupted, at least a part of the beam passing space SPb1 is appropriately maintained The degree of vacuum in the space. Furthermore, the time required for the vacuum pump 51 and the vacuum pump 52 to resume exhaustion until the decompression of the beam passing space SPb1 is completed can also be shortened.
再者，阻斷構件151d及阻斷構件152d的至少一者亦可為於插入至電子束EB的路徑中的狀態下，可將束通過空間SPb1中由阻斷構件151d及阻斷構件152d的至少一者與框體111所包圍的空間部分密閉，另一方面不阻斷電子束EB的構件。即，阻斷構件151d及阻斷構件152d的至少一者亦可為電子束EB可通過的構件。In addition, at least one of the blocking member 151d and the blocking member 152d may be inserted into the path of the electron beam EB by passing the beam through the space SPb1 by the blocking member 151d and the blocking member 152d. At least one is partially sealed with the space surrounded by the frame 111, and on the other hand, it does not block the member of the electron beam EB. That is, at least one of the blocking member 151d and the blocking member 152d may be a member through which the electron beam EB can pass.
（3-5）第5變形例
繼而，對第5變形例的掃描式電子顯微鏡SEMe加以說明。掃描式電子顯微鏡SEMe與所述的掃描式電子顯微鏡SEM相比較，於具備束照射裝置1e代替束照射裝置1的方面不同。掃描式電子顯微鏡SEMe的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖20，一方面對第5變形例的束照射裝置1e加以說明。圖20為表示第5變形例的束照射裝置1e的結構的剖面圖。(3-5) Fifth modification
Next, the scanning electron microscope SEMe of the fifth modification will be described. The scanning electron microscope SEMe is different from the scanning electron microscope SEM described above in that a beam irradiation device 1e is provided instead of the beam irradiation device 1. The other structure of the scanning electron microscope SEMe may also be the same as the scanning electron microscope SEM. Therefore, the beam irradiation device 1e according to the fifth modification will be described below with reference to FIG. 20. 20 is a cross-sectional view showing the structure of a beam irradiation device 1e according to a fifth modification.
如圖20所示，束照射裝置1e與所述的束照射裝置1相比較，於在真空形成構件121的射出面121LS形成有氣體供給孔126e的方面不同。束照射裝置1e的其他結構亦可與束照射裝置1相同。As shown in FIG. 20, the beam irradiation apparatus 1e is different from the beam irradiation apparatus 1 described above in that the gas supply hole 126e is formed on the emission surface 121LS of the vacuum forming member 121. The other structure of the beam irradiation apparatus 1e may be the same as that of the beam irradiation apparatus 1.
氣體供給孔126e以包圍束射出口1232及排氣槽124的方式形成。氣體供給孔126e亦可於射出面121LS中，以按離散的排列圖案而離散地排列的方式形成有多個。例如，氣體供給孔126e亦可於射出面121LS中以排列成環狀的方式形成有多個。或者，氣體供給孔126e亦可於射出面121LS中，以按連續的分佈圖案而連續地分佈的方式形成。例如，環狀的氣體供給孔126e亦可形成於射出面121LS。The gas supply hole 126e is formed so as to surround the beam exit 1232 and the exhaust groove 124. A plurality of gas supply holes 126e may be formed in the emission surface 121LS so as to be discretely arranged in a discrete arrangement pattern. For example, a plurality of gas supply holes 126e may be formed in the emission surface 121LS so as to be arranged in a ring shape. Alternatively, the gas supply holes 126e may be formed in the emission surface 121LS so as to be continuously distributed in a continuous distribution pattern. For example, the ring-shaped gas supply hole 126e may be formed in the emission surface 121LS.
對於氣體供給孔126e，經由以與氣體供給孔126e連通的方式形成於真空形成構件121（進而，視需要形成於側壁構件122）的配管127e而連結有氣體供給裝置。氣體供給裝置經由配管127e對氣體供給孔126e供給氣體。氣體例如亦可為潔淨乾燥空氣（Clean Dry Air，CDA）或惰性氣體。作為惰性氣體的一例，可列舉氮氣及氬氣的至少一者。氣體供給孔126e向束通過空間SPb3的周圍的空間（即，真空區域VSP的周圍的空間）供給（例如噴出）自氣體供給裝置供給的氣體。向束通過空間SPb3的周圍的空間供給的氣體作為防止不需要物質向束通過空間SPb3進入的空氣簾幕發揮功能。其結果，不易由自束通過空間SPb3的外部向束通過空間SPb3的內部進入的不需要物質妨礙電子束EB的適當照射。因此，束照射裝置1e可將電子束EB適當照射於試樣W。再者，不需要物質為妨礙電子束EB的適當照射的物質。作為不需要物質的一例，例如可列舉水蒸氣（即，氣體狀的水分子）及源自抗蝕劑的逸氣。The gas supply hole 126e is connected to the gas supply device via a pipe 127e formed in the vacuum forming member 121 (and, if necessary, formed in the side wall member 122 as necessary) so as to communicate with the gas supply hole 126e. The gas supply device supplies gas to the gas supply hole 126e via the pipe 127e. The gas may also be clean dry air (CDA) or inert gas, for example. As an example of the inert gas, at least one of nitrogen gas and argon gas may be mentioned. The gas supply hole 126e supplies (eg, ejects) the gas supplied from the gas supply device to the space around the beam passage space SPb3 (that is, the space around the vacuum region VSP). The gas supplied to the space around the beam passage space SPb3 functions as an air curtain that prevents unnecessary substances from entering the beam passage space SPb3. As a result, it is difficult for unnecessary substances entering from the outside of the beam passing space SPb3 to the inside of the beam passing space SPb3 to hinder proper irradiation of the electron beam EB. Therefore, the beam irradiation device 1e can appropriately irradiate the electron beam EB to the sample W. Furthermore, the unnecessary substance is a substance that prevents proper irradiation of the electron beam EB. As an example of unnecessary substances, for example, water vapor (that is, gaseous water molecules) and outgassing from the resist can be cited.
再者，氣體供給孔126e的沿著Z軸方向的位置亦可位於較束射出口1232及排氣槽124的至少一者的沿著Z軸方向的位置更靠遠離試樣W之側（+Z方向側）。Furthermore, the position of the gas supply hole 126e along the Z-axis direction may be located further to the side away from the sample W than the position of at least one of the beam exit 1232 and the exhaust groove 124 along the Z-axis direction (+ Z side).
所述說明中，掃描式電子顯微鏡SEM於電子束照射裝置1與退避構件223之間新形成真空區域VSP，並且維持該形成的真空區域VSP而自退避構件223向試樣W移動，藉此抑制由在電子束照射裝置1與試樣W之間新形成真空區域VSP所引起的、試樣W的溫度變化及試樣W的熱變形。然而，第5變形例中，亦可預測由新形成真空區域VSP所引起的試樣W的溫度變化，並以補償該溫度變化的方式調整經由氣體供給孔126e供給的氣體的溫度，並且於與試樣W相向的狀態下新形成真空區域VSP。於該情形時，即便於與試樣W相向的狀態下新形成真空區域VSP，亦供給以將伴隨真空區域VSP的形成的、試樣W的溫度變化消除的方式經調整的氣體，故而可抑制試樣W的熱變形。In the above description, the scanning electron microscope SEM newly forms a vacuum region VSP between the electron beam irradiation device 1 and the retreat member 223, and maintains the formed vacuum region VSP from the retreat member 223 to the sample W, thereby suppressing The temperature change of the sample W and the thermal deformation of the sample W caused by the newly formed vacuum region VSP between the electron beam irradiation device 1 and the sample W. However, in the fifth modification, it is also possible to predict the temperature change of the sample W caused by the newly formed vacuum region VSP, and adjust the temperature of the gas supplied through the gas supply hole 126e to compensate for the temperature change, and to The vacuum region VSP is newly formed in the state where the sample W faces each other. In this case, even if the vacuum region VSP is newly formed while facing the sample W, the gas adjusted to eliminate the temperature change of the sample W accompanying the formation of the vacuum region VSP is supplied, so it can be suppressed Thermal deformation of sample W.
（3-6）第6變形例
繼而，對第6變形例的掃描式電子顯微鏡SEMf進行說明。掃描式電子顯微鏡SEMf於與所述的掃描式電子顯微鏡SEM相比較，於具備平台22f代替平台22的方面不同。掃描式電子顯微鏡SEMf的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖21，一方面對第6變形例的平台22f加以說明。圖21為表示第6變形例的平台22f的結構的剖面圖。(3-6) Sixth modification
Next, the scanning electron microscope SEMf of the sixth modification will be described. The scanning electron microscope SEMf is different from the scanning electron microscope SEM described above in that it has a platform 22f instead of the platform 22. The other structures of the scanning electron microscope SEMf can also be the same as the scanning electron microscope SEM. Therefore, the platform 22f of the sixth modification will be described below with reference to FIG. 21 on the one hand. 21 is a cross-sectional view showing the structure of a platform 22f according to a sixth modification.
如圖21所示，平台22f與所述的平台22相比較，於具備外周構件222f代替外周構件222的方面不同。平台22f的其他結構亦可與平台22的其他結構相同。對於外周構件222f，外周構件222f的上表面OS相較於保持構件221的保持面HS，以根據試樣W的厚度（即，Z軸方向的長度）Wh的標準值的範圍所規定的既定量Wh_set1而位於更靠上方，於此方面，與外周構件222的上表面OS相較於保持構件221的保持面HS而以試樣W的厚度Wh位於更靠上方的、所述的外周構件222不同。然而，於既定量Wh_set1與試樣W的厚度Wh一致的情形時，外周構件222f的上表面OS與保持面HS的位置關係、和外周構件222的上表面OS與保持面HS的位置關係一致。外周構件222f的其他結構亦可與外周構件222的其他結構相同。再者，試樣W的厚度Wh的標準值的範圍亦可稱為試樣W的厚度Wh的公差、誤差的範圍。As shown in FIG. 21, the platform 22f is different from the platform 22 described above in that it includes an outer peripheral member 222f instead of the outer peripheral member 222. The other structure of the platform 22f may be the same as the other structure of the platform 22. With respect to the outer peripheral member 222f, the upper surface OS of the outer peripheral member 222f is compared with the holding surface HS of the holding member 221 by a predetermined amount defined by the range of the standard value of the thickness of the sample W (ie, the length in the Z-axis direction) Wh Wh_set1 is located above. In this respect, the outer peripheral member 222 is different from the upper surface OS of the outer peripheral member 222 than the holding surface HS of the holding member 221 by the thickness Wh of the sample W. . However, when the predetermined amount Wh_set1 matches the thickness Wh of the sample W, the positional relationship between the upper surface OS of the outer peripheral member 222f and the holding surface HS and the positional relationship between the upper surface OS of the outer peripheral member 222 and the holding surface HS match. The other structure of the outer peripheral member 222f may be the same as the other structure of the outer peripheral member 222. In addition, the range of the standard value of the thickness Wh of the sample W may also be referred to as the range of the tolerance and error of the thickness Wh of the sample W.
既定量Wh_set1亦可為成為標準上容許的試樣W的厚度Wh的下限值Wh_min以下的任意值。例如，於試樣W為直徑成為300 mm的半導體基板（例如矽晶圓）的情形時，試樣W的厚度Wh是以限制於750 μm～800 μm的範圍內的方式，根據日本電子與資訊科技工業協會（Japan Electronics and Information Technology Industries Association，JEIDA）標準或半導體設備與材料國際聯盟（Semiconductor Equipment and Material International，SEMI）標準而規定。於該情形時，下限值Wh_min成為750 μm。因此，外周構件222f的上表面OS相較於保持構件221的保持面HS，以成為750 μm以下的既定量Wh_set1而位於更靠上方。The quantitative Wh_set1 may be any value below the lower limit value Wh_min of the thickness Wh of the sample W that is allowed by the standard. For example, when the sample W is a semiconductor substrate (for example, a silicon wafer) with a diameter of 300 mm, the thickness Wh of the sample W is limited to the range of 750 μm to 800 μm, according to Japan Electronics and Information According to the Japan Electronics and Information Technology Industries Association (JEIDA) standard or the Semiconductor Equipment and Material International (SEMI) standard. In this case, the lower limit value Wh_min becomes 750 μm. Therefore, the upper surface OS of the outer peripheral member 222f is positioned higher than the holding surface HS of the holding member 221 with a predetermined amount Wh_set1 of 750 μm or less.
若使用如此般成為標準上容許的試樣W厚度Wh的下限值Wh_min以下的、既定量Wh_set1，使外周構件222f的上表面OSf相對於保持構件221的保持面HS而對位，則如圖22所示，於伴隨平台22f的移動而束照射裝置1相對於試樣W移動（尤其是沿著沿XY平面的方向移動）的情形時，可防止束照射裝置1與外周構件222f的碰撞。尤其無論將哪種試樣W保持於平台22f上，只要該試樣W符合標準，則外周構件222f的上表面OS均位於較試樣W的表面WS更靠下方。因此，與外周構件222f的上表面OS位於較試樣W的表面WS更靠上方的情形相比較，束照射裝置1與側壁構件222f碰撞的可能性變小。因此，無論將哪種試樣W保持於平台22f上，只要該試樣W符合標準，則可防止束照射裝置1與外周構件222f的碰撞。因此，第6變形例的掃描式電子顯微鏡SEMf可享有與所述的掃描式電子顯微鏡SEM可享有的效果同樣的效果，並且亦適當防止束照射裝置1與平台22f的碰撞（尤其是與外周構件222f的碰撞）。If the predetermined amount Wh_set1 below the lower limit value Wh_min of the thickness Wh of the sample W that is allowed in the standard is used, and the upper surface OSf of the outer peripheral member 222f is aligned with respect to the holding surface HS of the holding member 221, as shown in FIG. As shown in 22, when the beam irradiation device 1 moves relative to the sample W (especially in the direction along the XY plane) along with the movement of the platform 22f, the collision between the beam irradiation device 1 and the outer peripheral member 222f can be prevented. In particular, no matter which sample W is held on the platform 22f, as long as the sample W meets the standard, the upper surface OS of the outer peripheral member 222f is located below the surface WS of the sample W. Therefore, compared with the case where the upper surface OS of the outer peripheral member 222f is located above the surface WS of the sample W, the possibility that the beam irradiation device 1 collides with the side wall member 222f becomes smaller. Therefore, no matter which sample W is held on the platform 22f, as long as the sample W conforms to the standard, the collision between the beam irradiation device 1 and the outer peripheral member 222f can be prevented. Therefore, the scanning electron microscope SEMf of the sixth modification can enjoy the same effect as the scanning electron microscope SEM described above, and also appropriately prevent the collision between the beam irradiation device 1 and the platform 22f (especially with the peripheral member 222f collision).
再者，第6變形例中，外周構件222f可具備所述的外周構件222所具備的退避構件223，亦可不具備該退避構件223。於外周構件222f不具備退避構件223的情形時，亦可不進行使用所述的退避構件223的動作。In addition, in the sixth modification, the outer peripheral member 222f may or may not include the retreat member 223 provided in the outer peripheral member 222 described above. In the case where the outer peripheral member 222f does not include the retreat member 223, the operation using the retreat member 223 may not be performed.
（3-7）第7變形例
繼而，對第7變形例的掃描式電子顯微鏡SEMg加以說明。掃描式電子顯微鏡SEMg與所述的掃描式電子顯微鏡SEM相比較，於具備平台22g代替平台22的方面不同。掃描式電子顯微鏡SEMg的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖23（a），一方面對第7變形例的平台22g加以說明。圖23（a）為表示第7變形例的平台22g的結構的剖面圖。(3-7) The seventh modification
Next, the scanning electron microscope SEMg of the seventh modification will be described. The scanning electron microscope SEMg is different from the scanning electron microscope SEM described above in that a platform 22g is provided instead of the platform 22. The other structure of the scanning electron microscope SEMg can also be the same as the scanning electron microscope SEM. Therefore, referring to FIG. 23( a ), the platform 22 g of the seventh modification will be described below. FIG. 23( a) is a cross-sectional view showing the structure of the platform 22 g of the seventh modification.
如圖23（a）所示，平台22g具備保持構件221g及外周構件222g。保持構件221g與所述的保持構件221相比較，於自外周構件222g分離的方面不同。保持構件221g的其他結構亦可與保持構件221的其他結構相同。外周構件222g與所述的外周構件222相比較，於沿與保持構件221g的保持面HS交叉的方向（即，與保持構件221g保持的試樣W的表面WSu交叉的方向，例如Z軸方向）可移動的方面不同。即，外周構件222g與所述的外周構件222相比較於下述方面不同：可變更沿著與保持構件221g的保持面HS交叉的方向的、保持構件221g的保持面HS與外周構件222g的上表面OS的相對位置（即，保持構件221g保持的試樣W的表面WSu與外周構件222g的上表面OS的相對位置）。外周構件222g的其他結構亦可與外周構件222的其他結構相同。As shown in FIG. 23(a), the platform 22g includes a holding member 221g and an outer peripheral member 222g. The holding member 221g is different from the holding member 221 described above in that it is separated from the outer peripheral member 222g. The other structure of the holding member 221g may be the same as the other structure of the holding member 221. The outer peripheral member 222g is compared with the aforementioned outer peripheral member 222 in a direction crossing the holding surface HS of the holding member 221g (ie, a direction crossing the surface WSu of the sample W held by the holding member 221g, for example, the Z-axis direction) The removable aspect is different. That is, the outer peripheral member 222g is different from the above-described outer peripheral member 222 in that the holding surface HS of the holding member 221g and the upper surface of the outer peripheral member 222g can be changed in a direction crossing the holding surface HS of the holding member 221g The relative position of the surface OS (that is, the relative position of the surface WSu of the sample W held by the holding member 221g and the upper surface OS of the outer peripheral member 222g). The other structure of the outer peripheral member 222g may be the same as the other structure of the outer peripheral member 222.
為了使外周構件222g移動，平台22g例如具備配置於壓盤21上的支持構件223g、及相對於支持構件223g沿與保持面HS交叉的方向可升降的抬升銷bg。於抬升銷224g的上部連接有外周構件222g的下表面。其結果，伴隨抬升銷224g的升降，外周構件222g升降（即，沿與保持面HS交叉的方向移動）。即，伴隨抬升銷224g的升降，外周構件222g的上表面OS沿與保持面HS交叉的方向移動。In order to move the outer peripheral member 222g, the platform 22g includes, for example, a support member 223g disposed on the platen 21, and a lift pin bg that can be raised and lowered relative to the support member 223g in a direction crossing the holding surface HS. The lower surface of the outer peripheral member 222g is connected to the upper portion of the lift pin 224g. As a result, as the lifting pin 224g moves up and down, the outer peripheral member 222g moves up and down (that is, moves in a direction crossing the holding surface HS). That is, as the lifting pin 224g moves up and down, the upper surface OS of the outer peripheral member 222g moves in a direction crossing the holding surface HS.
第7變形例中，尤其外周構件222g基於保持構件221g保持的試樣W的表面WSu、與外周構件222g的上表面OS的實際的相對位置而移動。藉由外周構件222g移動而表面WSu與上表面OS的相對位置改變，故而可謂外周構件222g以基於表面WSu與上表面OS的實際的相對位置而變更表面WSu與上表面OS的相對位置的方式移動。進而，表面WSu與上表面OS的實際的相對位置根據試樣W的實際的厚度Wh而改變，故而可謂外周構件222g以基於試樣W的厚度Wh而變更表面WSu與上表面OS的相對位置的方式移動。In the seventh modification, in particular, the outer peripheral member 222g moves based on the actual relative position of the surface WSu of the sample W held by the holding member 221g and the upper surface OS of the outer peripheral member 222g. The relative position of the surface WSu and the upper surface OS changes due to the movement of the outer peripheral member 222g, so it can be said that the outer peripheral member 222g moves in such a manner as to change the relative position of the surface WSu and the upper surface OS based on the actual relative position of the surface WSu and the upper surface OS . Furthermore, the actual relative position of the surface WSu and the upper surface OS changes according to the actual thickness Wh of the sample W, so it can be said that the outer peripheral member 222g changes the relative position of the surface WSu and the upper surface OS based on the thickness Wh of the sample W Way to move.
具體而言，例如外周構件222g的上表面OS相較於保持構件221g的保持面HS，以成為保持構件221所保持的試樣W的厚度Wh以下的既定量Wh_set2而位於更靠上方。再者，於既定量Wh_set2與試樣W的厚度Wh一致的情形時，外周構件222g的上表面OS位於與試樣W的上表面（即，表面WSu）相同的平面。即，外周構件222g的上表面OS的沿著Z軸的位置與試樣W的表面WSu的沿著Z軸的位置對齊。另一方面，於既定量Wh_set2小於試樣W的厚度Wh的情形時，外周構件222g的上表面OS位於較試樣W的表面WSu更靠下方。即，外周構件222g的上表面OS相較於試樣W的表面WSu，更靠近保持構件221g的保持面HS。因此，亦可謂外周構件222g的上表面OS的位置（尤其是與保持面HS交叉的方向上的位置）根據保持構件221g所保持的試樣W的表面WSu的位置（尤其是與保持面HS交叉的方向上的位置）而變更。即，亦可謂以外周構件222g的上表面OS位於與保持構件221g所保持的試樣W的表面WSu相同的高度或位於更靠下方的方式，變更外周構件222g的位置。Specifically, for example, the upper surface OS of the outer peripheral member 222g is positioned higher than the holding surface HS of the holding member 221g by a predetermined amount Wh_set2 of the thickness Wh of the sample W held by the holding member 221. In addition, when the predetermined amount Wh_set2 and the thickness Wh of the sample W match, the upper surface OS of the outer peripheral member 222g is located on the same plane as the upper surface of the sample W (that is, the surface WSu). That is, the position of the upper surface OS of the outer peripheral member 222g along the Z axis is aligned with the position of the surface WSu of the sample W along the Z axis. On the other hand, when the predetermined amount Wh_set2 is smaller than the thickness Wh of the sample W, the upper surface OS of the outer peripheral member 222g is located below the surface WSu of the sample W. That is, the upper surface OS of the outer peripheral member 222g is closer to the holding surface HS of the holding member 221g than the surface WSu of the sample W. Therefore, it can also be said that the position of the upper surface OS of the outer peripheral member 222g (especially the position in the direction crossing the holding surface HS) is based on the position of the surface WSu of the sample W held by the holding member 221g (especially crossing the holding surface HS Position). That is, it can also be said that the position of the outer peripheral member 222g is changed so that the upper surface OS of the outer peripheral member 222g is located at the same height as the surface WSu of the sample W held by the holding member 221g or further below.
例如，於保持構件221g所保持的試樣W的厚度Wh為700 μm的情形時，側壁構件222g的上表面OS相較於保持構件221g的保持面HS，以成為700 μm以下的既定量Wh_set2而位於更靠上方。例如，於保持厚度Wh成為700 μm的試樣W的保持構件221g因更換保持的試樣W而保持厚度Wh成為800 μm的試樣W的情形時，外周構件222g移動，以使外周構件222g的上表面OS相較於保持構件221g的保持面HS，以成為800 μm以下的既定量Wh_set2而位於更靠上方的方式。For example, when the thickness Wh of the sample W held by the holding member 221g is 700 μm, the upper surface OS of the side wall member 222g is a fixed amount Wh_set2 of 700 μm or less compared to the holding surface HS of the holding member 221g. Located further up. For example, when the holding member 221g holding the sample W with a thickness Wh of 700 μm holds the sample W with a thickness Wh of 800 μm by replacing the held sample W, the outer peripheral member 222g moves so that the outer peripheral member 222g Compared with the holding surface HS of the holding member 221g, the upper surface OS is positioned to be higher than the predetermined amount Wh_set2 of 800 μm or less.
若如此般使外周構件222g的上表面OS相對於保持構件221g的保持面HS而對位，則外周構件222g的上表面OS位於與保持構件221g所保持的試樣W的表面WSu相同的高度，或位於更靠下方。因此，於第7變形例中，亦與第6變形例同樣地，無論將何種試樣W保持於平台22g上，均可防止束照射裝置1與外周構件222g的碰撞。尤其於第7變形例中，不僅是符合標準的試樣W，即便將不符合標準的試樣W保持於平台22g上，亦可防止束照射裝置1與外周構件222g的碰撞。因此，第7變形例的掃描式電子顯微鏡SEMg可享有與所述的掃描式電子顯微鏡SEM可享有的效果同樣的效果，並且亦適當防止束照射裝置1與平台22g的碰撞（尤其是與外周構件222g的碰撞）。If the upper surface OS of the outer peripheral member 222g is aligned with the holding surface HS of the holding member 221g in this way, the upper surface OS of the outer peripheral member 222g is located at the same height as the surface WSu of the sample W held by the holding member 221g, Or located further down. Therefore, in the seventh modification, as in the sixth modification, no matter what kind of sample W is held on the platform 22g, the collision between the beam irradiation device 1 and the outer peripheral member 222g can be prevented. In particular, in the seventh modification, not only the sample W conforming to the standard, but even if the sample W not conforming to the standard is held on the platform 22g, the collision between the beam irradiation device 1 and the outer peripheral member 222g can be prevented. Therefore, the scanning electron microscope SEMg of the seventh modification can enjoy the same effect as the scanning electron microscope SEM described above, and also appropriately prevent the collision of the beam irradiation device 1 with the platform 22g (especially with the peripheral member 222g collision).
然而，亦能以外周構件222g的上表面OS位於較保持構件221g所保持的試樣W的表面WSu更靠上方的方式移動。另一方面，於外周構件222g的上表面OS位於較試樣W的表面WSu更靠上方或下方的情形時，視Z軸方向上的上表面OS與表面WSu之間的距離不同，有真空區域VSP被破壞的可能性。再者，關於真空區域VSP的破壞的原因，已一方面參照圖6（a）～圖6（b）等一方面進行了說明，故而將其詳細說明省略。因此，Z軸方向上的上表面OS與表面WSu之間的距離Dg亦可成為容許上限距離以下。容許上限距離例如亦可根據上表面OS與表面WSu於Z軸方向上未大幅遠離以對束照射裝置1與試樣W的表面WSu之間的真空區域VSP的形成造成影響那般的狀況下的、上表面OS與表面WSu之間的距離而設定。作為一例，容許上限距離亦可小於在束照射裝置1與試樣W的表面WSu之間形成有真空區域VSP的情形時的、束照射裝置1與表面WSu之間的距離（即，射出面121LS與表面WSu之間的距離，例如1 μm～10 μm）。於該情形時，以跨越外周構件222g的上表面OS與試樣W的表面WSu的方式形成的真空區域VSP被破壞的可能性相對變小。However, it is also possible to move so that the upper surface OS of the outer peripheral member 222g is located above the surface WSu of the sample W held by the holding member 221g. On the other hand, when the upper surface OS of the outer peripheral member 222g is located above or below the surface WSu of the sample W, there is a vacuum area depending on the distance between the upper surface OS and the surface WSu in the Z-axis direction The possibility of VSP being destroyed. In addition, the cause of the destruction of the vacuum region VSP has been described on the one hand with reference to FIGS. 6(a) to 6(b) and so on, so a detailed description thereof will be omitted. Therefore, the distance Dg between the upper surface OS and the surface WSu in the Z-axis direction may also be equal to or less than the allowable upper limit distance. The permissible upper limit distance may be, for example, in a situation where the upper surface OS and the surface WSu are not greatly separated in the Z-axis direction to affect the formation of the vacuum region VSP between the beam irradiation device 1 and the surface WSu of the sample W 3. The distance between the upper surface OS and the surface WSu is set. As an example, the allowable upper limit distance may also be smaller than the distance between the beam irradiation device 1 and the surface WSu when the vacuum region VSP is formed between the beam irradiation device 1 and the surface WSu of the sample W (ie, the emission surface 121LS The distance from the surface WSu, for example, 1 μm to 10 μm). In this case, the possibility that the vacuum region VSP formed so as to cross the upper surface OS of the outer peripheral member 222g and the surface WSu of the sample W is destroyed is relatively small.
再者，第7變形例中，試樣W的厚度Wh亦可意指試樣W的表面WSu中真空區域VSP接觸（即，形成真空區域VSP或真空區域VSP面向）的真空面部分的位置的厚度Wh。於該情形時，外周構件222g以基於試樣W的厚度Wh來變更試樣W的表面WSu與外周構件222g的上表面OS的相對位置的方式移動與下述情況等價：外周構件222g以基於表面WSu中真空區域VSP接觸的真空面部分與上表面OS的實際的相對位置來變更表面WSu與上表面OS的相對位置的方式移動。其結果，以外周構件222g的上表面OS位於與表面WSu中真空區域VSP接觸的真空面部分相同的高度或位於更靠下方的方式，變更外周構件222g的位置。Furthermore, in the seventh modification, the thickness Wh of the sample W may also mean the position of the vacuum surface portion of the surface WSu of the sample W where the vacuum region VSP contacts (ie, forms the vacuum region VSP or the vacuum region VSP faces) Thickness Wh. In this case, the outer peripheral member 222g moves in such a manner that the relative position of the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222g is changed based on the thickness Wh of the sample W, which is equivalent to the following case: The actual relative position of the portion of the vacuum surface contacting the vacuum region VSP in the surface WSu and the upper surface OS is changed to change the relative position of the surface WSu and the upper surface OS. As a result, the position of the outer peripheral member 222g is changed so that the upper surface OS of the outer peripheral member 222g is located at the same height as the portion of the vacuum surface in contact with the vacuum region VSP in the surface WSu or further below.
或者，第7變形例中，試樣W的厚度Wh亦可意指試樣W的周緣部（即，外緣部）的厚度Wh。於該情形時，外周構件222g以基於試樣W的厚度Wh而變更試樣W的表面WSu與外周構件222g的上表面OS的相對位置的方式移動與下述情況等價：外周構件222g以如下方式移動，即，基於試樣W的表面WSu中試樣W的周緣部的面部分、與上表面OS（尤其是上表面OS中接近試樣W側的面部分，且上表面OS的周緣部（即，內緣部））的實際的相對位置，來變更表面WSu與上表面OS的相對位置。於該情形時，亦可謂以外周構件222g的上表面OS（尤其是上表面OS中接近試樣W側的面部分）位於與表面WSu中試樣W的周緣部的面部分相同的高度或位於更靠下方的方式，變更外周構件222g的位置。Alternatively, in the seventh modification, the thickness Wh of the sample W may also mean the thickness Wh of the peripheral edge portion (that is, the outer edge portion) of the sample W. In this case, the outer peripheral member 222g moves in such a manner that the relative position of the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222g is changed based on the thickness Wh of the sample W, which is equivalent to the following case: Movement, that is, based on the surface portion of the surface WSu of the sample W, the surface portion of the peripheral portion of the sample W, and the upper surface OS (especially the surface portion of the upper surface OS close to the side of the sample W, and the peripheral portion of the upper surface OS (That is, the inner edge portion)) the actual relative position of the surface WSu and the upper surface OS is changed. In this case, it can also be said that the upper surface OS of the outer peripheral member 222g (especially the surface portion of the upper surface OS close to the sample W side) is located at the same height or at the surface portion of the peripheral edge portion of the sample W in the surface WSu The position of the outer peripheral member 222g is changed further downward.
再者，亦可藉由平台驅動系統23，而使支持構件223g與保持構件221g一併於XY平面內可移動。另外，如圖23（b）所示，支持構件223g亦可安裝於保持構件221g1而代替壓盤21。再者，保持構件221g1與保持構件222g相比較，於具備延伸至支持構件223g的下方且將支持構件223g自下方加以支持的部分221g1的方面不同。保持構件221g1的其他結構亦可與保持構件222g的其他結構相同。Furthermore, the platform driving system 23 can also make the support member 223g and the holding member 221g movable together in the XY plane. In addition, as shown in FIG. 23( b ), the support member 223g may be attached to the holding member 221g1 instead of the platen 21. Furthermore, the holding member 221g1 is different from the holding member 222g in that it includes a portion 221g1 that extends below the support member 223g and supports the support member 223g from below. The other structure of the holding member 221g1 may be the same as the other structure of the holding member 222g.
第7變形例中，外周構件222g可具備所述的外周構件222所具備的退避構件223，亦可不具備該退避構件223。於外周構件222g不具備退避構件223的情形時，亦可不進行利用所述的退避構件223的動作。In the seventh modification, the outer peripheral member 222g may or may not include the retraction member 223 included in the above-described outer peripheral member 222. In the case where the outer peripheral member 222g does not include the retreat member 223, the operation using the retreat member 223 may not be performed.
（3-8）第8變形例
繼而，一方面參照圖24～圖26，一方面對第8變形例的掃描式電子顯微鏡SEMh加以說明。如圖24所示，掃描式電子顯微鏡SEMh與所述的掃描式電子顯微鏡SEM相比較，於具備具有多個平台22h的平台裝置2h代替具有單一的平台22的平台裝置2的方面不同。再者，圖24表示平台裝置2h具有兩個平台22h的例子。即，圖24表示雙平台型或二平台型的掃描式電子顯微鏡SEMh。以下，將兩個平台22h分別稱為平台22h-1及平台22h-2而區分兩者。掃描式電子顯微鏡SEMh的其他結構亦可與掃描式電子顯微鏡SEM相同。(3-8) Eighth modification
Next, referring to FIGS. 24 to 26, the scanning electron microscope SEMh of the eighth modification will be described. As shown in FIG. 24, the scanning electron microscope SEMh is different from the scanning electron microscope SEM described above in that it includes a platform device 2h having a plurality of platforms 22h instead of the platform device 2 having a single platform 22. Furthermore, FIG. 24 shows an example in which the platform device 2h has two platforms 22h. That is, FIG. 24 shows a scanning electron microscope SEMh of a double-stage type or a two-stage type. Hereinafter, the two platforms 22h are referred to as platform 22h-1 and platform 22h-2, respectively, to distinguish the two. The other structures of the scanning electron microscope SEMh can also be the same as the scanning electron microscope SEM.
平台22h-1與所述的平台22相比較，於亦可不具備退避構件223的方面不同。平台22h-1的其他結構亦可與平台22的其他結構相同。即，平台22h-1具備保持構件221，且具備與所述的外周構件222相比較而於不具備退避構件223的方面不同的外周構件222h-1。因此，第8變形例中，試樣W由平台22h-1（尤其是其保持構件221）加以保持。外周構件222h-1的其他結構亦可與外周構件222的其他結構相同。The platform 22h-1 differs from the platform 22 described above in that it does not necessarily include the retreat member 223. The other structure of the platform 22h-1 may be the same as the other structure of the platform 22. That is, the platform 22h-1 is provided with the holding member 221, and is provided with the outer peripheral member 222h-1 which is different from the aforementioned outer peripheral member 222 in that it does not include the retracting member 223. Therefore, in the eighth modification, the sample W is held by the platform 22h-1 (especially the holding member 221). The other structure of the outer peripheral member 222h-1 may be the same as the other structure of the outer peripheral member 222.
另一方面，平台22h-2與所述的平台22相比較，於亦可不具備保持構件221及外周構件222，另一方面具備退避構件223的方面不同。平台22h-2於沿著XY平面的一個方向上與平台22h-1鄰接。因此，第8變形例的掃描式電子顯微鏡SEMh中，亦與所述的掃描式電子顯微鏡SEM同樣地，退避構件223於XY平面內與保持構件221鄰接的位置，向遠離保持構件221的方向擴展。平台22h-2的其他結構亦可與平台22的其他結構相同。即，掃描式電子顯微鏡SEMh所具備的退避構件223的結構亦可與所述的掃描式電子顯微鏡SEM所具備的退避構件223的結構相同。On the other hand, the platform 22h-2 is different from the platform 22 described above in that it does not need to have the holding member 221 and the outer peripheral member 222, and on the other hand, it has the retreat member 223. The platform 22h-2 is adjacent to the platform 22h-1 in one direction along the XY plane. Therefore, in the scanning electron microscope SEMh of the eighth modification, similarly to the scanning electron microscope SEM described above, the retreat member 223 extends in a direction away from the holding member 221 in a position adjacent to the holding member 221 in the XY plane . The other structure of the platform 22h-2 may also be the same as the other structure of the platform 22. That is, the structure of the retraction member 223 included in the scanning electron microscope SEMh may be the same as the structure of the retraction member 223 included in the aforementioned scanning electron microscope SEM.
繼而，一方面參照圖25～圖26，一方面對具備多個平台22h-1及平台22h-2的平台裝置2h的動作流程加以說明。於計測試樣W時（即，於平台22h-1保持試樣的期間的至少一部分中），如圖25（a）所示，束照射裝置1於與試樣W相向的狀態下，於與試樣W之間形成真空區域VSP。於試樣W的計測完成之後、或試樣W的計測完成之前的時序，如圖25（b）所示，平台驅動系統23使平台22h-2沿XY平面移動，平台22h-1與平台22h-2彼此接近。此時，平台22h-1與平台22h-2的XY平面上的間隔例如亦可為1 μm～10 μm左右。其後，使平台22h-1與平台22h-2同時沿XY平面移動，經由圖25（c）所示的真空區域VSP與兩個平台22h-1及平台22h-2兩者接觸的狀態，而如圖26（a）所示，使真空區域VSP位於退避構件223的上表面ES。其後，使平台22h-1於XY平面內移動，如圖26（b）所示，使平台22h-2位於試樣W的搬入位置（裝載位置）或搬出位置（卸載位置）。Next, referring to FIGS. 25 to 26, the operation flow of the platform device 2h including a plurality of platforms 22h-1 and 22h-2 will be described. When the test sample W is counted (that is, at least part of the period during which the sample is held on the platform 22h-1), as shown in FIG. 25(a), the beam irradiation device 1 is in a state opposed to the sample W A vacuum region VSP is formed between the samples W. After the measurement of the sample W is completed or before the measurement of the sample W is completed, as shown in FIG. 25(b), the platform driving system 23 moves the platform 22h-2 along the XY plane, and the platform 22h-1 and the platform 22h -2 are close to each other. At this time, the interval on the XY plane of the stage 22h-1 and the stage 22h-2 may be, for example, about 1 μm to 10 μm. Thereafter, the stage 22h-1 and the stage 22h-2 are simultaneously moved along the XY plane, and are in contact with both the stage 22h-1 and the stage 22h-2 via the vacuum region VSP shown in FIG. 25(c), and As shown in FIG. 26( a ), the vacuum region VSP is positioned on the upper surface ES of the retreat member 223. Thereafter, the platform 22h-1 is moved in the XY plane, and as shown in FIG. 26(b), the platform 22h-2 is positioned at the loading position (loading position) or the loading position (unloading position) of the sample W.
再者，第8變型例中，亦可為藉由平台22h-2而可保持試樣W的構成。In addition, in the eighth modification example, the sample W may be held by the stage 22h-2.
第8變型例，與退避構件223獨立地保持試樣W的平台22h-1可移動，故而可減少平台22h-1的移動時的限制、例如必須使真空區域VSP一直位於退避構件223的上表面ES上等限制。In the eighth modification, the stage 22h-1 that holds the sample W independently of the retreat member 223 can be moved. Therefore, restrictions on the movement of the stage 22h-1 can be reduced. For example, the vacuum region VSP must always be located on the upper surface of the retreat member 223 ES first-class restrictions.
具備此種平台22h-1及平台22h-2的掃描式電子顯微鏡SEMh亦可享有與所述的掃描式電子顯微鏡SEM可享有的效果同樣的效果。The scanning electron microscope SEMh provided with such platforms 22h-1 and 22h-2 can also enjoy the same effects as those of the scanning electron microscope SEM described above.
再者，平台驅動系統23亦可使平台22h-1及平台22h-2一體地移動。或者，平台驅動系統23亦可使平台22h-1及平台22h-2分別獨立地移動。或者，掃描式電子顯微鏡SEMh亦可分別具備用以使平台22h-1移動的平台驅動系統23、與用以使平台22h-2移動的平台驅動系統23。Furthermore, the platform driving system 23 can also move the platform 22h-1 and the platform 22h-2 integrally. Alternatively, the platform driving system 23 may also independently move the platform 22h-1 and the platform 22h-2. Alternatively, the scanning electron microscope SEMh may include a platform drive system 23 for moving the platform 22h-1 and a platform drive system 23 for moving the platform 22h-2, respectively.
（3-9）第9變形例
繼而，對第9變形例的掃描式電子顯微鏡SEMi加以說明。掃描式電子顯微鏡SEMi與所述的掃描式電子顯微鏡SEM相比較，於具備第4變形例的束照射裝置1d（尤其是具備可將束通過空間SPb1中與框體111一併包圍的空間部分密閉的阻斷構件151d及阻斷構件152d）代替束照射裝置1的方面不同。進而，掃描式電子顯微鏡SEMi與所述的掃描式電子顯微鏡SEM相比較，於具備第7變形例的平台22g（即，具備沿與保持構件221g保持的試樣W的表面WSu交叉的方向（例如，Z軸方向）可移動的外周構件222g）代替平台22的方面不同。掃描式電子顯微鏡SEMi的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，掃描式電子顯微鏡SEMi的結構的詳細說明省略。(3-9) Ninth modification
Next, the scanning electron microscope SEMi of the ninth modification will be described. Compared with the scanning electron microscope SEM described above, the scanning electron microscope SEMi is provided with a beam irradiation device 1d according to a fourth modification (especially including a space portion that can surround the beam passing space SPb1 together with the frame 111 The blocking member 151d and the blocking member 152d) are different in that they replace the beam irradiation device 1. Furthermore, compared with the scanning electron microscope SEM described above, the scanning electron microscope SEMi is provided with a platform 22g of the seventh modification (that is, with a direction crossing the surface WSu of the sample W held by the holding member 221g (for example , The Z axis direction) the movable outer peripheral member 222g) is different in that it replaces the platform 22. The other structures of the scanning electron microscope SEMi can also be the same as the scanning electron microscope SEM. Therefore, the detailed description of the structure of the scanning electron microscope SEMi is omitted.
第9變形例中，掃描式電子顯微鏡SEMi於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換時，可適當選擇用以維持真空區域VSP的方法。以下，一方面參照圖27，一方面對用以維持真空區域VSP的動作的流程加以說明。In the ninth modification, when the state of the beam irradiation device 1 is switched from the non-backed state to the backed state or from the backed state to the non-backed state, the method for maintaining the vacuum region VSP can be appropriately selected. Hereinafter, referring to FIG. 27, the flow of the operation for maintaining the vacuum region VSP will be described.
如圖27所示，控制裝置4首先確定真空區域VSP的移動源的面（以下適當稱為“移動源面”）的Z位置（步驟S11）。進而，控制裝置4確定真空區域VSP的移動目標的面（以下適當稱為“移動目標面”）的Z位置（步驟S12）。再者，Z位置意指Z軸方向上的位置。於束照射裝置1的狀態自非退避狀態向退避狀態切換的情形時，移動源面相當於試樣W的表面WSu，移動目標面相當於外周構件222g的上表面OS（尤其是退避構件223的上表面ES）。另一方面，於束照射裝置1的狀態自退避狀態向非退避狀態切換的情形時，移動源面相當於外周構件222g的上表面OS（尤其是退避構件223的上表面ES），移動目標面相當於試樣W的表面WSu。As shown in FIG. 27, the control device 4 first determines the Z position of the surface of the movement source of the vacuum region VSP (hereinafter appropriately referred to as “movement source surface”) (step S11 ). Furthermore, the control device 4 determines the Z position of the surface of the moving target of the vacuum region VSP (hereinafter appropriately referred to as “moving target surface”) (step S12 ). Furthermore, the Z position means the position in the Z axis direction. When the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, the movement source surface corresponds to the surface WSu of the sample W, and the movement target surface corresponds to the upper surface OS of the outer peripheral member 222g (especially the retreat member 223). Upper surface ES). On the other hand, when the state of the beam irradiation device 1 is switched from the retracted state to the non-retracted state, the movement source surface corresponds to the upper surface OS of the outer peripheral member 222g (especially the upper surface ES of the retracting member 223), and the movement target surface This corresponds to the surface WSu of the sample W.
此處，一方面參照圖28，一方面對圖27的步驟S11中確定移動源面的Z位置的動作的流程加以說明。再者，圖27的步驟S12中確定移動目標面的Z位置的動作的流程與確定移動源面的Z位置的動作的流程相同，故而省略其詳細說明。如圖28所示，控制裝置4判定是否已保有與移動源面的Z位置有關的位置資訊（以下稱為“Z位置資訊”）（步驟S111）。例如，控制裝置4亦可於已保有表示由可計測移動源面的Z位置的計測裝置所得的以往的計測結果的資訊的情形時，判定為已保有Z位置資訊。Here, referring to FIG. 28 on the one hand, the flow of the operation of determining the Z position of the movement source surface in step S11 of FIG. 27 will be described. In addition, the flow of the operation of determining the Z position of the movement target surface in step S12 of FIG. 27 is the same as the flow of the operation of determining the Z position of the movement source surface, so a detailed description thereof is omitted. As shown in FIG. 28, the control device 4 determines whether or not position information (hereinafter referred to as "Z position information") related to the Z position of the movement source surface has been retained (step S111). For example, the control device 4 may determine that the Z position information has been retained when the information indicating the previous measurement result obtained by the measurement device capable of measuring the Z position of the moving source surface is already held.
於步驟S111中進行判定結果判定為控制裝置4已保有Z位置資訊的情形時（步驟S111：是（Yes）），控制裝置4基於已保有的Z位置資訊來確定移動源面的Z位置（步驟S131）。另一方面，於步驟S111中進行判定結果判定為控制裝置4未保有Z位置資訊的情形時（步驟S111：否（No）），控制裝置4判定掃描式電子顯微鏡SEMi是否具備用以新獲取Z位置資訊的位置資訊獲取裝置（步驟S112）。作為位置資訊獲取裝置的一例，可列舉可計測移動源面的Z位置的計測裝置（例如雷射干涉儀及編碼器的至少一者）。When it is determined in step S111 that the control device 4 already holds the Z position information (step S111: Yes), the control device 4 determines the Z position of the movement source surface based on the stored Z position information (step S131). On the other hand, when it is determined in step S111 that the control device 4 does not retain the Z position information (step S111: No), the control device 4 determines whether the scanning electron microscope SEMi is equipped to newly acquire Z A location information acquisition device for location information (step S112). As an example of the position information acquisition device, a measurement device (for example, at least one of a laser interferometer and an encoder) that can measure the Z position of the moving source surface can be cited.
於步驟S112中進行判定結果判定為掃描式電子顯微鏡SEMi具備位置資訊獲取裝置的情形時（步驟S112：是（Yes）），控制裝置4判定是否使位置資訊獲取裝置新獲取Z位置資訊（步驟S113）。於步驟S113中進行判定結果判定為使位置資訊獲取裝置新獲取Z位置資訊的情形時（步驟S113：是（Yes）），控制裝置4使位置資訊獲取裝置新獲取Z位置資訊後，基於新獲取的Z位置資訊而確定移動源面的Z位置（步驟S131）。When it is determined in step S112 that the scanning electron microscope SEMi is equipped with a position information acquisition device (step S112: Yes), the control device 4 determines whether the position information acquisition device newly acquires Z position information (step S113 ). When it is determined in step S113 that the position information acquiring device newly acquires Z position information (step S113: Yes), the control device 4 causes the position information acquiring device to newly acquire Z position information, based on the new acquisition Z position information to determine the Z position of the moving source surface (step S131).
另一方面，於步驟S112中進行判定結果判定為掃描式電子顯微鏡SEMi不具備位置資訊獲取裝置的情形時（步驟S112：否（No）），或於步驟S113中進行判定結果判定為不使位置資訊獲取裝置新獲取Z位置資訊的情形時（步驟S113：否（No）），控制裝置4判定是否已保有與表面中包含移動源面的物體（以下稱為“移動源物體”）的Z軸方向的尺寸（實質上為厚度）有關的尺寸資訊（以下稱為“Z尺寸資訊”）（步驟S121）。例如，控制裝置4亦可於已保有表示由可計測移動源物體的Z軸方向上的尺寸的計測裝置所得的以往的計測結果的資訊的情形時，判定為已保有Z尺寸資訊。再者，於束照射裝置1的狀態自非退避狀態向退避狀態切換的情形時，移動源物體相當於試樣W，表面中包含移動目標面的物體（以下稱為“移動目標物體”）相當於外周構件222g（尤其是退避構件223）。另一方面，於束照射裝置1的狀態自退避狀態向非退避狀態切換的情形時，移動源物體相當於外周構件222g（尤其是退避構件223），移動目標物體相當於試樣W。On the other hand, when it is determined in step S112 that the scanning electron microscope SEMi does not have a position information acquisition device (step S112: No), or in step S113, the determination result is determined not to position When the information acquiring device newly acquires the Z position information (step S113: No), the control device 4 determines whether the Z axis of the object including the moving source surface (hereinafter referred to as "moving source object") on the surface has been retained Dimension information (hereinafter referred to as "Z dimension information") related to the dimension (substantially the thickness) of the direction (step S121). For example, the control device 4 may determine that the Z-size information is already held when information indicating a conventional measurement result obtained by the measurement device capable of measuring the size of the moving source object in the Z-axis direction is already held. In addition, when the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, the moving source object corresponds to the sample W, and the object including the moving target surface on the surface (hereinafter referred to as "moving target object") corresponds to The outer peripheral member 222g (especially the retreat member 223). On the other hand, in the case where the state of the beam irradiation device 1 is switched from the retracted state to the non-retracted state, the moving source object corresponds to the outer peripheral member 222g (especially the retracting member 223), and the moving target object corresponds to the sample W.
於步驟S121中進行判定結果判定為控制裝置4已保有Z尺寸資訊的情形時（步驟S121：是（Yes）），控制裝置4基於已保有的Z尺寸資訊來確定（即，推定）移動源面的Z位置（步驟S132）。另一方面，於步驟S121中進行判定結果判定為控制裝置4未保有Z尺寸資訊的情形時（步驟S121：否（No）），控制裝置4判定掃描式電子顯微鏡SEMi是否具備用以新獲取Z尺寸資訊的尺寸資訊獲取裝置（步驟S122）。作為尺寸資訊獲取裝置的一例，可列舉可計測移動源物體的尺寸的計測裝置（例如雷射掃描儀等）。When it is determined in step S121 that the control device 4 has the Z size information (step S121: Yes), the control device 4 determines (ie, estimates) the movement source surface based on the stored Z size information Z position (step S132). On the other hand, when it is determined in step S121 that the control device 4 does not hold the Z-size information (step S121: No), the control device 4 determines whether the scanning electron microscope SEMi is equipped to newly acquire Z A size information acquisition device of size information (step S122). As an example of the size information acquisition device, a measurement device (for example, a laser scanner, etc.) that can measure the size of the moving source object can be cited.
於步驟S122中進行判定結果判定為掃描式電子顯微鏡SEMi具備尺寸資訊獲取裝置的情形時（步驟S122：是（Yes）），控制裝置4判定是否使尺寸資訊獲取裝置新獲取Z尺寸資訊（步驟S123）。於步驟S123中進行判定結果判定為使尺寸資訊獲取裝置新獲取Z尺寸資訊的情形時（步驟S123：是（Yes）），控制裝置4使尺寸資訊獲取裝置新獲取Z尺寸資訊後，基於新獲取的Z尺寸資訊而特定（即，推定）移動源面的Z位置（步驟S132）。When it is determined in step S122 that the scanning electron microscope SEMi is equipped with a size information acquisition device (step S122: Yes), the control device 4 determines whether the size information acquisition device newly acquires Z size information (step S123 ). When it is determined in step S123 that the size information acquisition device newly acquires the Z size information (step S123: Yes), the control device 4 causes the size information acquisition device to newly acquire the Z size information, based on the new acquisition Specific Z size information (ie, estimate) the Z position of the moving source surface (step S132).
另一方面，於步驟S122中進行判定結果判定為掃描式電子顯微鏡SEMi不具備尺寸資訊獲取裝置的情形時（步驟S122：否（No）），或於步驟S123中進行判定結果判定為不使尺寸資訊獲取裝置新獲取Z尺寸資訊的情形時（步驟S123：否（No）），控制裝置4推定為移動源物體的Z軸方向上的尺寸為移動源物體的Z軸方向上的尺寸的標準值（步驟S124）。然後，控制裝置4基於移動源物體的Z軸方向上的尺寸的標準值，來確定（即，推定）移動源面的Z位置（步驟S132）。On the other hand, when it is determined in step S122 that the scanning electron microscope SEMi does not have a size information acquisition device (step S122: No), or in step S123, the result is determined not to reduce the size When the information acquisition device newly acquires Z size information (step S123: No), the control device 4 estimates that the size of the moving source object in the Z axis direction is the standard value of the size of the moving source object in the Z axis direction (Step S124). Then, the control device 4 determines (ie, estimates) the Z position of the movement source surface based on the standard value of the dimension of the movement source object in the Z-axis direction (step S132).
再次於圖27中，其後控制裝置4判定步驟S11中所確定的移動源面的Z位置與步驟S12中所確定的移動目標面的Z位置的差量，是否相對於作為束照射裝置1與試樣W之間的間隔D的目標值的、所需間隔D_target而充分小（步驟S21）。即，控制裝置4判定Z軸方向上的移動源面與移動目標面之間的間隔（或距離）是否相對於所需間隔D_target而充分小。再者，移動源面的Z位置與移動目標面的Z位置的差量（即，間隔）相當於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換時，真空區域VSP應越過的階差的Z軸方向上的尺寸。In FIG. 27 again, the control device 4 then determines whether the difference between the Z position of the movement source surface determined in step S11 and the Z position of the movement target surface determined in step S12 is relative to the beam irradiation device 1 and The target value of the interval D between the samples W and the required interval D_target are sufficiently small (step S21). That is, the control device 4 determines whether the interval (or distance) between the movement source surface and the movement target surface in the Z-axis direction is sufficiently small relative to the required interval D_target. Furthermore, the difference (ie, the interval) between the Z position of the movement source surface and the Z position of the movement target surface is equivalent to the state of the beam irradiation device 1 being switched from the non-back-off state to the back-off state, or from the back-off state to the non-back-off state The dimension in the Z-axis direction of the step difference that the vacuum region VSP should cross.
判定是否為Z位置的差量相對於所需間隔D_target而充分小的狀態是為了進行下述判定，即，判定Z位置的差量是否小至（即，真空區域VSP應越過的階差的Z軸方向上的尺寸是否小至）即便真空區域VSP自移動源面移動至移動目標面亦可維持真空區域VSP的程度。因此，Z位置的差量相對於所需間隔D_target而充分小的狀態與下述狀態等價：Z位置的差量小至即便真空區域VSP自移動源面移動至移動目標面亦可維持真空區域VSP的程度。即，Z位置的差量相對於所需間隔D_target而充分小的狀態亦可與Z位置的差量小至下述程度的狀態等價：即便於與移動源面之間形成有真空區域VSP的束照射裝置1沿XY平面相對移動直至與移動目標面相向為止的情形時，亦依然於與移動目標面之間持續形成真空區域VSP。換言之，Z位置的差量相對於所需間隔D_target而充分小的狀態亦可與Z位置的差量小至下述程度的狀態等價：束照射裝置1與移動源面之間的間隔（即，出射面121LS的Z位置與移動源面的Z位置的差量）成為可維持於束照射裝置1與移動源面之間形成的真空區域VSP的間隔，且束照射裝置1與移動目標面之間的間隔（即，出射面121LS的Z位置與移動目標面的Z位置的差量）成為可維持於束照射裝置1與移動目標面之間形成的真空區域VSP的間隔。The determination of whether the difference in Z position is sufficiently small with respect to the required interval D_target is for making a determination as to whether the difference in Z position is small (ie, the Z of the step difference that the vacuum region VSP should cross Whether the dimension in the axial direction is so small) that the vacuum area VSP can be maintained even if the vacuum area VSP moves from the movement source surface to the movement target surface. Therefore, the state where the difference in the Z position is sufficiently small with respect to the required interval D_target is equivalent to the state where the difference in the Z position is small enough to maintain the vacuum region even if the vacuum region VSP moves from the moving source surface to the moving target surface The degree of VSP. That is, the state in which the difference in the Z position is sufficiently small with respect to the required interval D_target may be equivalent to the state in which the difference in the Z position is as small as the degree that the vacuum region VSP is formed between the moving source surface Even when the beam irradiation device 1 moves relatively along the XY plane until it faces the moving target surface, the vacuum region VSP continues to be formed between the moving target surface. In other words, the state where the difference in the Z position is sufficiently small with respect to the required distance D_target can also be equivalent to the state where the difference in the Z position is as small as the following: the distance between the beam irradiation device 1 and the moving source surface (ie , The difference between the Z position of the exit surface 121LS and the Z position of the moving source surface) becomes the interval that can be maintained in the vacuum region VSP formed between the beam irradiation device 1 and the moving source surface, and between the beam irradiation device 1 and the moving target surface The interval (that is, the difference between the Z position of the exit surface 121LS and the Z position of the moving target surface) becomes the interval that can be maintained in the vacuum region VSP formed between the beam irradiation device 1 and the moving target surface.
於步驟S21中進行判定結果判定為與Z位置的差量相對於所需間隔D_target而充分小的情形時（步驟S21：是（Yes）），推定為即便真空區域VSP自移動源面移動至移動目標面亦可維持真空區域VSP。於該情形時，平台驅動系統23調整沿著XY平面的方向上的、平台22與束照射裝置1的相對位置，以使束照射裝置1的狀態自非退避狀態向退避狀態切換，或自退避狀態向非退避狀態切換（步驟S31）。其結果，維持形成有真空區域VSP而束照射裝置1的狀態自非退避狀態向退避狀態切換，或自退避狀態向非退避狀態切換（步驟S31）。即，真空區域VSP自束照射裝置1與試樣W之間的空間向束照射裝置1與退避構件223之間的空間移動，或自束照射裝置1與退避構件223之間的空間向束照射裝置1與試樣W之間的空間移動（步驟S31）。When it is determined in step S21 that the difference from the Z position is sufficiently small with respect to the required interval D_target (step S21: Yes), it is estimated that the vacuum area VSP moves from the movement source surface to the movement The target surface can also maintain the vacuum area VSP. In this case, the platform driving system 23 adjusts the relative position of the platform 22 and the beam irradiation device 1 in the direction along the XY plane to switch the state of the beam irradiation device 1 from the non-retracted state to the retreated state, or self-retracted The state is switched to the non-backoff state (step S31). As a result, the state in which the vacuum region VSP is formed and the beam irradiation device 1 is maintained is switched from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state (step S31). That is, the vacuum region VSP moves from the space between the beam irradiation device 1 and the sample W to the space between the beam irradiation device 1 and the retreat member 223, or the space between the self beam irradiation device 1 and the retreat member 223 to the beam The space between the device 1 and the sample W moves (step S31).
然而，由於外周構件222g可沿Z軸方向而移動，故而不限於移動源面與移動目標面位於相同高度。即，移動源面亦可低於移動目標面，或移動源面亦可高於移動目標面。再者，移動源面低於移動目標面的狀態相當於下述狀態：相較於和移動源面相向的束照射裝置1與移動源面之間的距離（具體而言，Z軸方向的距離且Z軸方向上的位置的差量，以下於第9變形例中相同），沿XY平面相對移動而變得和移動目標面相向的束照射裝置1與移動目標面之間的距離更小。另一方面，移動源面高於移動目標面的狀態相當於下述狀態：相較於和移動源面相向的束照射裝置1與移動源面之間的距離，沿XY平面相對移動而變得和移動目標面相向的束照射裝置1與移動目標面之間的距離更大。However, since the outer peripheral member 222g can move in the Z-axis direction, it is not limited to that the movement source surface and the movement target surface are at the same height. That is, the moving source surface may be lower than the moving target surface, or the moving source surface may be higher than the moving target surface. Furthermore, the state where the moving source surface is lower than the moving target surface is equivalent to the following state: compared to the distance between the beam irradiation device 1 facing the moving source surface and the moving source surface (specifically, the distance in the Z-axis direction In addition, the difference in position in the Z-axis direction is the same as in the ninth modification. The distance between the beam irradiation device 1 and the moving target surface that are relatively moved along the XY plane and face the moving target surface is smaller. On the other hand, the state where the moving source surface is higher than the moving target surface is equivalent to a state where the distance between the beam irradiation device 1 facing the moving source surface and the moving source surface becomes relatively moved along the XY plane and becomes The distance between the beam irradiation device 1 facing the moving target surface and the moving target surface is larger.
此處，假設於移動源面低於移動目標面的情形時，與移動源面高於移動目標面的情形相比較，於束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中，束照射裝置1碰撞移動目標物體的可能性相對變高。例如，圖29（a）表示於束照射裝置1的狀態自非退避狀態向退避狀態切換的情形時，作為移動源面的試樣W的表面WSu低於作為移動目標面的外周構件222g的上表面OS的例子，圖29（b）表示於束照射裝置1的狀態自非退避狀態向退避狀態切換的情形時，作為移動源面的試樣W的表面WSu高於作為移動目標面的外周構件222g的上表面OS的例子。例如，圖30（a）表示束照射裝置1的狀態自退避狀態向非退避狀態切換的、作為移動源面的外周構件222g的上表面OS低於作為移動目標面的試樣W的表面WSu的例子，例如，圖30（b）表示束照射裝置1的狀態自退避狀態向非退避狀態切換的、作為移動源面的外周構件222g的上表面OS高於作為移動目標面的試樣W的表面WSu的例子。Here, it is assumed that when the moving source surface is lower than the moving target surface, compared with the case where the moving source surface is higher than the moving target surface, the state of the beam irradiation device 1 is switched from the non-backed state to the backed state, or self-backed When the state is switched to the non-backoff state, the possibility that the beam irradiation device 1 collides with the moving target object becomes relatively high. For example, FIG. 29(a) shows that when the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, the surface WSu of the sample W as the movement source surface is lower than the upper surface of the outer peripheral member 222g as the movement target surface An example of the surface OS, FIG. 29(b) shows that when the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, the surface WSu of the sample W as the moving source surface is higher than the outer peripheral member as the moving target surface An example of the upper surface OS of 222g. For example, FIG. 30( a) shows that the upper surface OS of the outer peripheral member 222 g as the movement source surface is lower than the surface WSu of the sample W as the movement target surface when the state of the beam irradiation device 1 is switched from the retracted state to the non-retracted state. For example, for example, FIG. 30(b) shows that the state of the beam irradiation device 1 is switched from the retracted state to the non-retracted state, and the upper surface OS of the outer peripheral member 222g as the movement source surface is higher than the surface of the sample W as the movement target surface Example of WSu.
因此，掃描式電子顯微鏡SEMi於移動源面低於移動目標面的情形時，於為了使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換，而控制平台驅動系統23使平台22g沿XY平面移動（即，使束照射裝置1沿XY平面相對移動）之前，控制間隔調整系統14而增大束照射裝置1與移動源面之間的距離。例如，圖29（c）表示於束照射裝置1的狀態自非退避狀態向退避狀態切換的情形時，束照射裝置1沿Z軸方向移動，以使束照射裝置1與作為移動源面的試樣W的表面WSu之間的距離自距離d11增大至距離d12（其中，d12＞d11）的例子。例如，圖30（c）表示於束照射裝置1的狀態自退避狀態向非退避狀態切換的情形時，束照射裝置1沿Z軸方向移動，以使束照射裝置1與作為移動源面的外周構件222g的上表面OS之間的距離自距離d21增大至距離d22（其中，d22＞d21）的例子。再者，圖29（c）及圖30（c）中，以虛線表示移動前的外周構件222g，以實線表示移動後的外周構件222g。於該情形時，束照射裝置1與移動源面之間的距離設定為下述距離：於束照射裝置1與移動源面之間可形成（即，可維持）真空區域VSP，且於沿XY平面相對移動而變得和移動目標面相向的束照射裝置1與移動目標面之間可形成真空區域VSP。其結果，掃描式電子顯微鏡SEMi可防止束照射裝置1與移動目標物體的碰撞，並且維持真空區域VSP。Therefore, when the moving source surface is lower than the moving target surface, the scanning electron microscope SEMi is controlled in order to switch the state of the beam irradiation device 1 from the non-backed state to the backed state, or from the backed state to the non-backed state. Before the stage driving system 23 moves the stage 22g along the XY plane (ie, relatively moves the beam irradiation device 1 along the XY plane), the interval adjustment system 14 is controlled to increase the distance between the beam irradiation device 1 and the moving source surface. For example, FIG. 29(c) shows that when the state of the beam irradiation device 1 is switched from the non-retracted state to the retracted state, the beam irradiation device 1 is moved in the Z-axis direction so that the beam irradiation device 1 and the test source surface are moved. An example in which the distance between the surfaces WSu of the sample W increases from the distance d11 to the distance d12 (where d12>d11). For example, FIG. 30(c) shows that when the state of the beam irradiation device 1 is switched from the retracted state to the non-retracted state, the beam irradiation device 1 moves in the Z-axis direction so that the beam irradiation device 1 and the outer periphery as the moving source surface An example in which the distance between the upper surfaces OS of the member 222g increases from the distance d21 to the distance d22 (where d22>d21). In addition, in FIGS. 29(c) and 30(c), the outer peripheral member 222g before movement is indicated by a broken line, and the outer peripheral member 222g after movement is indicated by a solid line. In this case, the distance between the beam irradiation device 1 and the moving source surface is set to the following distance: a vacuum region VSP can be formed (ie, can be maintained) between the beam irradiation device 1 and the moving source surface, and along the XY A vacuum region VSP can be formed between the beam irradiation device 1 and the moving target surface where the plane moves relatively and becomes opposite to the moving target surface. As a result, the scanning electron microscope SEMi can prevent the beam irradiation device 1 from colliding with the moving target object and maintain the vacuum region VSP.
另一方面，掃描式電子顯微鏡SEMi於移動源面高於移動目標面的情形時，亦可不於為了使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換，而控制平台驅動系統23使平台22g沿XY平面移動（即，使束照射裝置1沿XY平面相對移動）之前，控制間隔調整系統14而增大束照射裝置1與移動源面之間的距離。於該情形時，掃描式電子顯微鏡SEMi亦可維持束照射裝置1與移動源面之間的距離（例如，維持於可形成所述的真空區域VSP的距離），而控制平台驅動系統23使平台22g沿XY平面移動，由此使束照射裝置1的狀態自非退避狀態向退避狀態切換，或自退避狀態向非退避狀態切換。On the other hand, when the moving source surface is higher than the moving target surface, the scanning electron microscope SEMi does not need to switch the state of the beam irradiation device 1 from the non-backed state to the backed state, or from the backed state to the non-backed state Switching, and before controlling the platform driving system 23 to move the platform 22g along the XY plane (ie, relatively moving the beam irradiation device 1 along the XY plane), the interval adjustment system 14 is controlled to increase the distance between the beam irradiation device 1 and the moving source surface . In this case, the scanning electron microscope SEMi can also maintain the distance between the beam irradiation device 1 and the moving source surface (for example, at a distance where the vacuum region VSP can be formed), and control the platform driving system 23 to make the platform 22g moves along the XY plane, thereby switching the state of the beam irradiation device 1 from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state.
另一方面，於步驟S21中進行判定結果判定為Z位置的差量並非相對於所需間隔D_target而充分小的情形時（步驟S21：否（No）），若真空區域VSP自移動源面移動至移動目標面，則有無法維持真空區域VSP的可能性。即，有下述可能性：束照射裝置1與移動源面之間的間隔成為可維持於束照射裝置1與移動源面之間形成的真空區域VSP的間隔，另一方面，束照射裝置1與移動目標面之間的間隔未成為可維持於束照射裝置1與移動目標面之間形成的真空區域VSP的間隔。因此，於該情形時，掃描式電子顯微鏡SEMi進行用以維持真空區域VSP的動作。On the other hand, when it is determined in step S21 that the difference in the Z position is not sufficiently small relative to the required interval D_target (step S21: No), if the vacuum area VSP moves from the moving source surface To the moving target surface, there is a possibility that the vacuum region VSP cannot be maintained. That is, there is a possibility that the distance between the beam irradiation device 1 and the moving source surface becomes an interval that can be maintained in the vacuum region VSP formed between the beam irradiation device 1 and the moving source surface. On the other hand, the beam irradiation device 1 The distance from the moving target surface does not become the distance that can be maintained in the vacuum region VSP formed between the beam irradiation device 1 and the moving target surface. Therefore, in this case, the scanning electron microscope SEMi performs an operation to maintain the vacuum region VSP.
具體而言，首先控制裝置4判定外周構件222g是否沿Z軸方向可移動（步驟S22）。於步驟S22中進行判定結果判定為外周構件222g可移動的情形時（步驟S22：是（Yes）），掃描式電子顯微鏡SEMi採用移動外周構件222g的動作來作為用以維持真空區域VSP的動作。具體而言，掃描式電子顯微鏡SEMi使外周構件222g（即，移動源面或移動目標面）移動，以使Z位置的差量相對於所需間隔D_target而充分變小（步驟S25）。其結果，於使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中，可適當維持真空區域VSP。Specifically, first, the control device 4 determines whether the outer peripheral member 222g is movable in the Z-axis direction (step S22). When it is determined in step S22 that the outer peripheral member 222g is movable (step S22: Yes), the scanning electron microscope SEMi adopts the operation of moving the outer peripheral member 222g as the operation for maintaining the vacuum region VSP. Specifically, the scanning electron microscope SEMi moves the peripheral member 222g (that is, the movement source surface or the movement target surface) so that the difference in the Z position is sufficiently reduced with respect to the required interval D_target (step S25). As a result, the vacuum region VSP can be appropriately maintained during the process of switching the state of the beam irradiation device 1 from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state.
此時，掃描式電子顯微鏡SEMi亦可使外部構件222g移動，以使外周構件222g移動後的束照射裝置1的Z位置與移動源面的Z位置之間的差量，小於使外周構件222g移動後的束照射裝置1的Z位置與移動目標面的Z位置之間的差量。即，掃描式電子顯微鏡SEMi亦可使外部構件222g移動以使移動源面高於移動目標面。其結果，於使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中，可防止束照射裝置1與移動目標物體的碰撞。At this time, the scanning electron microscope SEMi may also move the outer member 222g so that the difference between the Z position of the beam irradiation device 1 after the movement of the outer peripheral member 222g and the Z position of the moving source surface is smaller than that of moving the outer peripheral member 222g The difference between the Z position of the subsequent beam irradiation device 1 and the Z position of the movement target surface. That is, the scanning electron microscope SEMi can also move the outer member 222g so that the movement source surface is higher than the movement target surface. As a result, in the process of switching the state of the beam irradiation device 1 from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state, the collision of the beam irradiation device 1 with the moving target object can be prevented.
進而，掃描式電子顯微鏡SEMi亦可使外部構件222g移動，以使外周構件222g移動的後的、試樣W的表面WSu的Z位置與外周構件222g的上表面OS的Z位置之間的差量，小於使外周構件222g移動前的、表面WSu的Z位置與上表面OS的Z位置之間的差量。即，掃描式電子顯微鏡SEMi亦可使外周構件222g移動，以使表面Wu與上表面OS於Z軸方向上接近。其結果，和以表面Wu與上表面OS於Z軸方向上遠離的方式移動外周構件222g的情形相比較，Z位置的差量相對於所需間隔D_target而充分變小的可能性提高。Furthermore, the scanning electron microscope SEMi can also move the outer member 222g so that the difference between the Z position of the surface WSu of the sample W and the Z position of the upper surface OS of the outer peripheral member 222g after the outer peripheral member 222g is moved Is smaller than the difference between the Z position of the surface WSu and the Z position of the upper surface OS before the outer peripheral member 222g is moved. That is, the scanning electron microscope SEMi can also move the outer peripheral member 222g so that the surface Wu and the upper surface OS approach in the Z-axis direction. As a result, compared with the case where the outer surface member 222g is moved so that the surface Wu and the upper surface OS are away from each other in the Z-axis direction, the possibility that the difference in the Z position is sufficiently reduced with respect to the required interval D_target is increased.
例如，如圖31（a）所示，於作為移動源面的試樣W的表面WSu低於作為移動目標面的外周構件222g的上表面OS的狀況下，束照射裝置1的狀態自非退避狀態向退避狀態切換的情形時，掃描式電子顯微鏡SEMi降低移動構件222g，以使（i）表面Wu與上表面OS接近而Z位置的差量相對於所需間隔D_target充分變小，且（ii）外周構件222g的上表面OS變得低於試樣W的表面WSu（即，束照射裝置1與表面WSu之間的間隔d31變得小於束照射裝置1與上表面OS之間的間隔d32）。例如，如圖31（b）所示，於作為移動源面的試樣W的表面WSu高於作為移動目標面的外周構件222g的上表面OS的狀況下，束照射裝置1的狀態自非退避狀態向退避狀態切換的情形時，掃描式電子顯微鏡SEMi升高移動構件222g，以使（i）表面Wu與上表面OS接近而Z位置的差量相對於所需間隔D_target充分變小，且（ii）外周構件222g的上表面OS變得低於試樣W的表面WSu（即，束照射裝置1與表面WSu之間的間隔d41變得小於束照射裝置1與上表面OS之間的間隔d42）。例如，如圖32（a）所示，於作為移動源面的外周構件222g的上表面OS高於作為移動目標面的試樣W的表面WSu的狀況下，束照射裝置1的狀態自退避狀態向非退避狀態切換的情形時，掃描式電子顯微鏡SEMi降低移動構件222g，以使（i）表面Wu與上表面OS接近而Z位置的差量相對於所需間隔D_target充分變小，且（ii）試樣W的表面WSu變得低於外周構件222g的上表面OS（即，束照射裝置1與上表面OS之間的間隔d52變得小於束照射裝置1與表面WSu之間的間隔d51）。例如，如圖32（b）所示，於作為移動源面的外周構件222g的上表面OS低於作為移動目標面的試樣W的表面WSu的狀況下，束照射裝置1的狀態自退避狀態向非退避狀態切換的情形時，掃描式電子顯微鏡SEMi升高移動構件222g，以使（i）表面Wu與上表面OS接近而Z位置的差量相對於所需間隔D_target充分變小，且（ii）試樣W的表面WSu變得低於外周構件222g的上表面OS（即，束照射裝置1與上表面OS之間的間隔d62變得小於束照射裝置1與表面WSu之間的間隔d61）。再者，圖31（a）～圖32（b）中，以虛線表示移動前的外周構件222g，以實線表示移動後的外周構件222g。For example, as shown in FIG. 31( a ), in a state where the surface WSu of the sample W as the movement source surface is lower than the upper surface OS of the outer peripheral member 222 g as the movement target surface, the state of the beam irradiation device 1 is never retracted When the state is switched to the retreat state, the scanning electron microscope SEMi lowers the moving member 222g so that (i) the surface Wu is close to the upper surface OS and the difference in the Z position is sufficiently smaller than the required interval D_target, and (ii ) The upper surface OS of the outer peripheral member 222g becomes lower than the surface WSu of the sample W (that is, the interval d31 between the beam irradiation device 1 and the surface WSu becomes smaller than the interval d32 between the beam irradiation device 1 and the upper surface OS) . For example, as shown in FIG. 31(b), in a situation where the surface WSu of the sample W as the movement source surface is higher than the upper surface OS of the outer peripheral member 222g as the movement target surface, the state of the beam irradiation device 1 is never retracted When the state is switched to the retreat state, the scanning electron microscope SEMi raises the moving member 222g so that (i) the surface Wu and the upper surface OS are close and the difference in the Z position is sufficiently smaller than the required interval D_target, and ( ii) The upper surface OS of the outer peripheral member 222g becomes lower than the surface WSu of the sample W (that is, the interval d41 between the beam irradiation device 1 and the surface WSu becomes smaller than the interval d42 between the beam irradiation device 1 and the upper surface OS ). For example, as shown in FIG. 32( a ), in a situation where the upper surface OS of the outer peripheral member 222 g as the movement source surface is higher than the surface WSu of the sample W as the movement target surface, the state of the beam irradiation device 1 is from the retreat state In the case of switching to the non-back-off state, the scanning electron microscope SEMi lowers the moving member 222g so that (i) the surface Wu and the upper surface OS are close and the difference in the Z position is sufficiently small with respect to the required interval D_target, and (ii ) The surface WSu of the sample W becomes lower than the upper surface OS of the outer peripheral member 222g (that is, the interval d52 between the beam irradiation device 1 and the upper surface OS becomes smaller than the interval d51 between the beam irradiation device 1 and the surface WSu) . For example, as shown in FIG. 32( b ), in a situation where the upper surface OS of the outer peripheral member 222 g as the movement source surface is lower than the surface WSu of the sample W as the movement target surface, the state of the beam irradiation device 1 is from the retreat state In the case of switching to the non-back-off state, the scanning electron microscope SEMi raises the moving member 222g so that (i) the surface Wu and the upper surface OS are close to each other, and the difference in the Z position is sufficiently smaller than the required distance D_target, and ( ii) The surface WSu of the sample W becomes lower than the upper surface OS of the outer peripheral member 222g (that is, the interval d62 between the beam irradiation device 1 and the upper surface OS becomes smaller than the interval d61 between the beam irradiation device 1 and the surface WSu ). In addition, in FIGS. 31( a) to 32 (b ), the outer peripheral member 222 g before movement is indicated by a broken line, and the outer peripheral member 222 g after movement is indicated by a solid line.
另一方面，於步驟S22進行判定結果判定為外周構件222g不可移動的情形時（步驟S22：否（No）），控制裝置4判定是否可藉由提高（即，變更）真空泵51及真空泵52的至少一者的排氣速度，而於使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中可維持真空區域VSP（步驟S23）。即，控制裝置4判定是否可將真空泵51及真空泵52的至少一者的排氣速度，提高至在使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中可持續維持真空區域VSP的程度（步驟S23）。再者，真空泵51及真空泵52的至少一者的排氣速度越大，可形成真空區域VSP的所需間隔D_target越變大。即，真空泵51及真空泵52的至少一者的排氣速度越大，越可於束照射裝置1與試樣W之間的間隔D更大的狀況下形成真空區域VSP。再者，排氣速度為與每單位時間排氣的氣體流量成比例的參數。On the other hand, when the determination result in step S22 determines that the outer peripheral member 222g is immovable (step S22: No (No)), the control device 4 determines whether the vacuum pump 51 and the vacuum pump 52 can be improved (ie, changed) by At least one of the exhaust speeds can maintain the vacuum region VSP during the process of switching the state of the beam irradiation device 1 from the non-retracted state to the retreated state or from the retreated state to the non-retracted state (step S23). That is, the control device 4 determines whether the exhaust speed of at least one of the vacuum pump 51 and the vacuum pump 52 can be increased to switch the state of the beam irradiation device 1 from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state The degree to which the vacuum area VSP can be maintained continuously during the switching (step S23). In addition, the larger the exhaust speed of at least one of the vacuum pump 51 and the vacuum pump 52, the larger the required interval D_target that can form the vacuum region VSP. That is, the greater the exhaust speed of at least one of the vacuum pump 51 and the vacuum pump 52, the more the vacuum region VSP can be formed in a situation where the interval D between the beam irradiation device 1 and the sample W is greater. In addition, the exhaust speed is a parameter proportional to the gas flow rate exhausted per unit time.
於步驟S23中進行判定結果判定為可藉由提高真空泵51及真空泵52的至少一者的排氣速度而維持真空區域VSP（即，可將真空泵51及真空泵52的至少一者的排氣速度提高至可持續維持真空區域VSP的程度）的情形時（步驟S23：是（Yes）），掃描式電子顯微鏡SEMi將真空泵51及真空泵52的至少一者的排氣速度，提高至於使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中可持續維持真空區域VSP的程度（步驟S26）。其結果，於使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中，可適當維持真空區域VSP。The determination result in step S23 determines that the vacuum area VSP can be maintained by increasing the exhaust speed of at least one of the vacuum pump 51 and the vacuum pump 52 (that is, the exhaust speed of at least one of the vacuum pump 51 and the vacuum pump 52 can be increased To the extent that the vacuum region VSP can be maintained continuously (step S23: Yes), the scanning electron microscope SEMi increases the exhaust speed of at least one of the vacuum pump 51 and the vacuum pump 52 so that the beam irradiation device 1 The degree to which the vacuum region VSP can be continuously maintained during the process of switching from the non-backoff state to the backoff state, or from the backoff state to the non-backoff state (step S26). As a result, the vacuum region VSP can be appropriately maintained during the process of switching the state of the beam irradiation device 1 from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state.
另一方面，於步驟S23中進行判定結果判定為不可藉由提高真空泵51及真空泵52的至少一者的排氣速度而維持真空區域VSP（即，無法將真空泵51及真空泵52的至少一者的排氣速度提高至可持續維持真空區域VSP的程度）的情形時（步驟S23：否（No）），有於使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中，無法持續形成真空區域VSP的可能性。因此，於該情形時，掃描式電子顯微鏡SEMi將阻斷構件151d及阻斷構件152d插入至電子束EB的路徑中，以備真空區域VSP被破壞的情形（步驟S27）。其結果，將束通過空間SPb1中由阻斷構件151d及阻斷構件152d的至少一者與框體111所包圍的空間部分密閉（步驟S27）。因此，維持束通過空間SPb1中的至少一部分空間部分的真空度。On the other hand, the determination result in step S23 determines that the vacuum area VSP cannot be maintained by increasing the exhaust speed of at least one of the vacuum pump 51 and the vacuum pump 52 (that is, the at least one of the vacuum pump 51 and the vacuum pump 52 cannot be When the exhaust speed is increased to the extent that the vacuum region VSP can be maintained continuously (step S23: No), the state of the beam irradiation device 1 may be switched from the non-retracted state to the retreated state, or from the retreat state to During the non-back-off state switching, the possibility that the vacuum region VSP cannot be continuously formed. Therefore, in this case, the scanning electron microscope SEMi inserts the blocking member 151d and the blocking member 152d into the path of the electron beam EB in case the vacuum region VSP is destroyed (step S27). As a result, at least one of the blocking member 151d and the blocking member 152d in the beam passing space SPb1 is partially sealed with the space surrounded by the housing 111 (step S27). Therefore, the vacuum degree of at least a part of the space portion in the beam passing space SPb1 is maintained.
於進行以上的步驟S11至步驟S27的處理之後，掃描式電子顯微鏡SEMi使束照射裝置1的狀態自非退避狀態向退避狀態實際切換，或自退避狀態向非退避狀態實際切換（步驟S31）。其結果，掃描式電子顯微鏡SEMi於使束照射裝置1的狀態自非退避狀態向退避狀態切換、或自退避狀態向非退避狀態切換的過程中，持續形成真空區域VSP的可能性進一步變高。After performing the above steps S11 to S27, the scanning electron microscope SEMi actually switches the state of the beam irradiation device 1 from the non-back-off state to the back-off state, or from the back-off state to the non-back-off state (step S31). As a result, the scanning electron microscope SEMi becomes more likely to continue to form the vacuum region VSP during the process of switching the state of the beam irradiation device 1 from the non-retracted state to the retreated state, or from the retreated state to the non-retracted state.
（3-10）第10變形例
繼而，對第10變形例的掃描式電子顯微鏡SEMj加以說明。掃描式電子顯微鏡SEMj與所述的掃描式電子顯微鏡SEM相比較，於具備平台22j代替平台22的方面不同。掃描式電子顯微鏡SEMj的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖33（a）及圖33（b），一方面對第10變形例的平台22j加以說明。圖33（a）為表示第10變形例的平台22j的結構的立體圖，圖33（b）為圖33（a）的立體圖的A-A剖面圖。(3-10) Tenth modification
Next, the scanning electron microscope SEMj of the tenth modification will be described. The scanning electron microscope SEMj is different from the scanning electron microscope SEM described above in that it has a platform 22j instead of the platform 22. The other structures of the scanning electron microscope SEMj can also be the same as the scanning electron microscope SEM. Therefore, the platform 22j of the tenth modification will be described below with reference to FIGS. 33(a) and 33(b). FIG. 33(a) is a perspective view showing the structure of a platform 22j according to a tenth modification, and FIG. 33(b) is an A-A cross-sectional view of the perspective view of FIG. 33(a).
如圖33（a）及圖33（b）所示，平台22j與平台22相比較，於具備退避構件223j代替退避構件223的方面不同。如圖34（b）所示，平台22j具備設於外周構件222的一部分的凹部中載置的退避構件223j。平台22j的其他結構亦可與平台22的其他結構相同。As shown in FIGS. 33( a) and 33 (b ), the platform 22 j is different from the platform 22 in that it includes a retraction member 223 j instead of the retraction member 223. As shown in FIG. 34( b ), the platform 22 j includes a retreat member 223 j placed in a recess provided in a part of the outer peripheral member 222. The other structure of the platform 22j may also be the same as the other structure of the platform 22.
退避構件223j與退避構件223相比較，於自平台22j可裝卸（即，可脫卸及/或可安裝）的方面不同。退避構件223j具備板部分223j1、及設於該板部分223j1的上側的多個部位的突起部223j2。另外，設於平台22j的凹部中，設有與未圖示的真空泵連通的配管223j3。與該配管223j3連通的真空泵亦可具有與所述的真空泵51相同程度的排氣能力。再者，圖33（a）及圖33（b）的例子中，該些多個突起部223j2的個數為3，但多個突起部223j2的個數不限定於3。另外，多個突起部223j2的Z軸方向的尺寸（高度）亦可為幾μm左右。The retreat member 223j is different from the retreat member 223 in that it is detachable (ie, detachable and/or installable) from the platform 22j. The retreat member 223j includes a plate portion 223j1, and protrusions 223j2 provided at a plurality of positions above the plate portion 223j1. In addition, a pipe 223j3 communicating with a vacuum pump (not shown) is provided in the concave portion of the platform 22j. The vacuum pump communicating with the piping 223j3 may have the same degree of exhaust capacity as the vacuum pump 51 described above. In addition, in the examples of FIGS. 33(a) and 33(b), the number of the plurality of protrusions 223j2 is three, but the number of the plurality of protrusions 223j2 is not limited to three. In addition, the size (height) of the plurality of protrusions 223j2 in the Z-axis direction may be about several μm.
繼而，一方面參照圖34（a）～圖34（d），一方面對利用退避構件223j進行的維持真空區域VSP的動作的流程加以說明。於計測試樣W時（即，於平台22j保持試樣W的期間的至少一部分）中，如圖34（a）所示，束照射裝置1於與試樣W相向的狀態下，於與試樣W之間形成真空區域VSP。試樣W的計測完成之後，如圖34（b）所示，平台驅動系統23使平台22j沿XY平面移動，使束照射裝置1的射出面121LS與退避構件223j相向。此時，束照射裝置1的射出面121LS、與退避構件223j的板部分223j1的沿著Z軸方向的間隔，為於射出面121LS與板部分223j1之間形成局部的真空區域VSP的程度的間隔、典型而言10 μm左右。此處，經由配管223j3來進行利用真空泵的排氣，故而退避構件223j的板部分223j1被抽吸至束照射裝置1。經由配管223j3的利用真空泵的排氣亦可為較用以形成局部的真空區域VSP的排氣速度更高的排氣速度。Next, referring to FIGS. 34( a) to 34 (d ), the flow of the operation of maintaining the vacuum region VSP by the retreat member 223 j will be described. When the test sample W is counted (that is, at least part of the period during which the sample W is held on the platform 22j), as shown in FIG. 34(a), the beam irradiation device 1 is in a state opposed to the sample W, A vacuum region VSP is formed between the samples W. After the measurement of the sample W is completed, as shown in FIG. 34( b ), the table driving system 23 moves the table 22 j along the XY plane, and causes the exit surface 121LS of the beam irradiation device 1 to face the retreat member 223 j. At this time, the distance between the exit surface 121LS of the beam irradiation device 1 and the plate portion 223j1 of the retreat member 223j along the Z-axis direction is such that a partial vacuum region VSP is formed between the exit surface 121LS and the plate portion 223j1 , Typically about 10 μm. Here, the exhaust by the vacuum pump is performed through the piping 223j3, so the plate portion 223j1 of the retreat member 223j is sucked to the beam irradiation device 1. The exhaust through the piping 223j3 using the vacuum pump may be a higher exhaust speed than the exhaust speed used to form the local vacuum region VSP.
其後，如圖34（c）所示，藉由間隔控制系14及平台驅動系統23的至少一者，以束照射裝置1的射出面121LS與多個突起部分223j2接觸的方式，調整射出面121LS與退避構件223j的間隔。射出面121LS與多個突起部分223j2接觸後，降低經由配管223j3的排氣的排氣速度，使退避構件223j真空吸附於束照射裝置1的射出面121LS。其後，如圖34（d）所示，藉由間隔控制系14及平台驅動系統23的至少一者而擴大束照射裝置1的射出面121LS與平台22j的間隔。該動作之後，使平台22j移動，例如使其位於試樣W的搬入位置或搬出位置。Thereafter, as shown in FIG. 34(c), by at least one of the interval control system 14 and the platform driving system 23, the emission surface 121LS of the beam irradiation device 1 is brought into contact with the plurality of protrusions 223j2 to adjust the emission surface The distance between 121LS and the retracting member 223j. After the exit surface 121LS contacts the plurality of protrusions 223j2, the exhaust velocity of the exhaust gas passing through the pipe 223j3 is reduced, and the retreat member 223j is vacuum-adsorbed to the exit surface 121LS of the beam irradiation device 1. Thereafter, as shown in FIG. 34( d ), the distance between the exit surface 121LS of the beam irradiation device 1 and the stage 22 j is increased by at least one of the interval control system 14 and the stage drive system 23. After this operation, the platform 22j is moved, for example, to the sample W loading position or the loading position.
圖33（a）～圖34（d）所示的例子中，藉由退避構件223j的多個突起部分223j2，於退避構件223j的板部分223j1與射出面121LS之間形成由突起部分223j2的高度決定的間隙。該間隙的間隔為幾μm左右，故而於板部分223j1與束照射裝置1的射出面121LS之間持續維持局部的真空區域VSP。In the examples shown in FIGS. 33(a) to 34(d), the height of the protrusion 223j2 is formed between the plate portion 223j1 of the withdrawal member 223j and the exit surface 121LS by the plurality of protrusions 223j2 of the withdrawal member 223j Decide the gap. The interval between the gaps is about several μm, so the local vacuum region VSP is continuously maintained between the plate portion 223j1 and the emission surface 121LS of the beam irradiation device 1.
具備此種平台22j的掃描式電子顯微鏡SEMj亦可享有與所述的掃描式電子顯微鏡SEM可享有的效果同樣的效果。進而，於掃描式電子顯微鏡SEMj中，亦與第8變形例的掃描式電子顯微鏡SEMh同樣地，與退避構件223j獨立地保持試樣W的平台22j可移動，故而可減少平台22j的移動時的限制、例如必須使真空區域VSP一直位於退避構件223j的上表面ES上等限制。The scanning electron microscope SEMj provided with such a platform 22j can also enjoy the same effects as those of the scanning electron microscope SEM described above. Furthermore, in the scanning electron microscope SEMj, as in the scanning electron microscope SEMh of the eighth modification, the stage 22j that holds the sample W independently of the retreat member 223j is movable, so that the time when the stage 22j moves can be reduced. Restrictions, for example, the vacuum area VSP must always be positioned on the upper surface ES of the retreat member 223j.
（3-11）第11變形例
繼而，對第11變形例的掃描式電子顯微鏡SEMk加以說明。掃描式電子顯微鏡SEMk與所述的掃描式電子顯微鏡SEM相比較，於具備平台22k代替平台22的方面不同。掃描式電子顯微鏡SEMk的其他結構亦可與掃描式電子顯微鏡SEM相同。因此，以下一方面參照圖35（a）及圖35（b），一方面對第11變形例的平台22k加以說明。圖35（a）及圖35（b）分別為表示第11變形例的平台22k的結構的剖面圖。(3-11) Eleventh modification
Next, the scanning electron microscope SEMk of the eleventh modification will be described. The scanning electron microscope SEMk is different from the scanning electron microscope SEM described above in that a platform 22k is provided instead of the platform 22. The other structure of the scanning electron microscope SEMk may be the same as the scanning electron microscope SEM. Therefore, the platform 22k of the eleventh modification will be described below with reference to FIGS. 35(a) and 35(b). 35(a) and 35(b) are cross-sectional views showing the structure of a platform 22k according to an eleventh modification.
如圖35（a）及圖35（b）所示，平台22k與平台22相比較，於具備外周構件222k及退避構件223k代替外周構件222及退避構件223的方面不同。平台22k的其他結構亦可與平台22的其他結構相同。As shown in FIGS. 35( a) and 35 (b ), the platform 22 k is different from the platform 22 in that it includes an outer peripheral member 222 k and a retracting member 223 k instead of the outer peripheral member 222 and the retracting member 223. The other structure of the platform 22k may be the same as the other structure of the platform 22.
外周構件222k與外周構件222相比較，於亦可不含退避構件223的方面不同。外周構件222k的其他結構亦可與外周構件222的其他結構相同。The outer peripheral member 222k is different from the outer peripheral member 222 in that it may not include the retreat member 223. The other structure of the outer peripheral member 222k may be the same as the other structure of the outer peripheral member 222.
退避構件223k與退避構件223相比較，於可上翻地設於外周構件222的外側的方面不同。例如，如圖35（a）所示，退避構件223k亦可設於外周構件222k的側方。退避構件223k的狀態亦可於以其上表面ES與試樣W的表面WSu大致一致的方式上翻的狀態、與以其上表面ES朝向側方的方式摺疊的狀態之間可切換。於局部的真空區域VSP位於退避構件223k上的退避狀態下，如圖35（a）所示，退避構件223k設定為以其上表面ES與試樣W的表面WSu大致一致的方式上翻的狀態。另外，於與退避狀態不同的狀態下，退避構件223k如圖35（b）所示，設定為其上表面ES朝向側方的收納狀態。該圖35（a）及圖35（b）的例子中，可減少由退避構件223k所引起的平台22k的行程（stroke）受限的不良狀況。The retraction member 223k is different from the retraction member 223 in that it is provided on the outer side of the outer peripheral member 222 so as to be upturnable. For example, as shown in FIG. 35(a), the retreat member 223k may be provided on the side of the outer peripheral member 222k. The state of the retraction member 223k may be switched between a state where the upper surface ES and the surface WSu of the sample W are substantially upturned and a state where the upper surface ES is folded sideways. In the retreat state where the partial vacuum region VSP is located on the retreat member 223k, as shown in FIG. 35(a), the retreat member 223k is set to a state where the upper surface ES and the surface WSu of the sample W substantially coincide with each other . In addition, in a state different from the retracted state, the retracted member 223k is set to a storage state in which the upper surface ES faces the side as shown in FIG. 35(b). In the examples of FIGS. 35( a) and 35 (b ), it is possible to reduce the disadvantage that the stroke of the platform 22 k due to the retracting member 223 k is limited.
具備此種平台22k的掃描式電子顯微鏡SEMk亦可享有與所述的掃描式電子顯微鏡SEM可享有的效果同樣的效果。The scanning electron microscope SEMk with such a platform 22k can also enjoy the same effects as those of the scanning electron microscope SEM described above.
（3-12）第12變形例
繼而，一方面參照圖36一方面對第12變形例的掃描式電子顯微鏡SEMl加以說明。圖36為表示第12變形例的掃描式電子顯微鏡SEMl的結構的剖面圖。(3-12) The twelfth modification
Next, the scanning electron microscope SEM1 of the twelfth modification will be described with reference to FIG. 36 on the one hand. 36 is a cross-sectional view showing the structure of a scanning electron microscope SEM1 of a twelfth modification example.
如圖36所示，第12變形例的掃描式電子顯微鏡SEMl與所述的掃描式電子顯微鏡SEM相比較，於具備光學顯微鏡17l的方面不同。掃描式電子顯微鏡SEMl的其他結構亦可與所述的掃描式電子顯微鏡SEM的其他結構相同。As shown in FIG. 36, the scanning electron microscope SEM1 of the twelfth modification is different from the scanning electron microscope SEM described above in that it includes an optical microscope 17l. The other structure of the scanning electron microscope SEM1 may also be the same as the other structure of the scanning electron microscope SEM.
光學顯微鏡17l為能以光學方式計測試樣W的狀態（例如，試樣W的表面WSu的至少一部分的狀態）的裝置。即，光學顯微鏡17l為以光學方式計測試樣W的狀態，可獲取與試樣W有關的資訊的裝置。尤其是光學顯微鏡17l於在大氣壓環境下可計測試樣W的狀態的方面，與於真空環境下計測試樣W的狀態的束照射裝置1（尤其是電子檢測器116）不同。The optical microscope 171 is a device that can optically measure the state of the test sample W (for example, the state of at least a part of the surface WSu of the sample W). That is, the optical microscope 17l is a device that optically measures the test sample W and can obtain information about the sample W. In particular, the optical microscope 17l differs from the beam irradiation device 1 (especially the electronic detector 116) in that it can measure the state of the test sample W under an atmospheric pressure environment.
光學顯微鏡17l於束照射裝置1將電子束EB照射於試樣W而計測試樣W的狀態之前，計測試樣W的狀態。即，掃描式電子顯微鏡SEMl使用光學顯微鏡17l計測試樣W的狀態之後，使用束照射裝置1來計測試樣W的狀態。此處，光學顯微鏡17l於大氣壓環境下可計測試樣W的狀態，故而於光學顯微鏡17l計測試樣W的狀態的期間中，束照射裝置1亦可不形成真空區域VSP。另一方面，束照射裝置1於光學顯微鏡17l完成試樣W的狀態的計測之後，形成真空區域VSP而對試樣W照射電子束EB。The optical microscope 171 counts the state of the test sample W before the beam irradiation device 1 irradiates the electron beam EB to the sample W to calculate the state of the test sample W. That is, the scanning electron microscope SEM1 uses the optical microscope 171 to measure the state of the test sample W, and then uses the beam irradiation device 1 to measure the state of the test sample W. Here, the optical microscope 17l can measure the state of the test sample W under an atmospheric pressure environment. Therefore, during the period when the optical microscope 17l measures the state of the test sample W, the beam irradiation device 1 may not form the vacuum region VSP. On the other hand, after the optical microscope 171 completes the measurement of the state of the sample W, the beam irradiation device 1 forms a vacuum region VSP and irradiates the sample W with the electron beam EB.
平台22亦可於束照射裝置1將電子束EB照射於試樣W的期間中，以試樣W位於束照射裝置1可照射電子束EB的位置的方式移動。平台22亦可於電子顯微鏡17l計測試樣W的狀態的期間中，以試樣W位於光學顯微鏡17l可計測試樣W的狀態的位置的方式移動。平台22亦可於束照射裝置1可照射電子束EB的位置、與光學顯微鏡17l可計測的位置之間移動。The stage 22 may move while the beam irradiation device 1 is irradiating the electron beam EB to the sample W, so that the sample W is located at a position where the beam irradiation device 1 can irradiate the electron beam EB. The stage 22 may also move so that the sample W is positioned at a position where the test sample W can be measured by the optical microscope 17l while the electron microscope 171 is measuring the state of the test sample W. The stage 22 can also move between a position where the beam irradiation device 1 can irradiate the electron beam EB and a position that the optical microscope 171 can measure.
掃描式電子顯微鏡SEMl亦可基於使用光學顯微鏡17l的、試樣W的狀態的計測結果，使用束照射裝置1來計測試樣W的狀態。例如，掃描式電子顯微鏡SEMl亦可首先使用光學顯微鏡17l來計測試樣W中的所需區域的狀態。然後，掃描式電子顯微鏡SEMl亦可基於使用光學顯微鏡17l的、試樣W的所需區域的狀態的計測結果，使用束照射裝置1來計測試樣W的相同所需區域的狀態（或與所需區域不同的區域的狀態）。於該情形時，亦可於試樣W的所需區域中，形成有可用於使用束照射裝置1的試樣W的狀態計測的、既定的指標物。作為既定的指標物的一例，例如可列舉用於試樣W與束照射裝置1的對位的標記（例如基準標記（fiducial mark）及對準標記（alignment mark）的至少一者）。The scanning electron microscope SEM1 may also use the beam irradiation device 1 to measure the state of the test sample W based on the measurement result of the state of the sample W using the optical microscope 171. For example, the scanning electron microscope SEM1 may first use the optical microscope 171 to measure the state of the desired area in the test sample W. Then, the scanning electron microscope SEM1 may also use the beam irradiation device 1 to calculate the state of the same required region of the test sample W (or The status of different areas is required). In this case, a predetermined indicator that can be used to measure the state of the sample W using the beam irradiation device 1 may be formed in a desired area of the sample W. As an example of a predetermined index, for example, a mark (for example, at least one of a fiducial mark and an alignment mark) used for alignment of the sample W and the beam irradiation device 1 may be mentioned.
或者，如上文所述，於試樣W的表面WSu形成有微細的凹凸圖案。例如，於試樣W為半導體基板的情形時，作為微細的凹凸圖案的一例，可列舉：塗佈有抗蝕劑的半導體基板經曝光裝置曝光且經顯影裝置顯影後殘留於半導體基板的抗蝕劑圖案。於該情形時，例如，掃描式電子顯微鏡SEMl首先使用光學顯微鏡17l來計測形成於試樣W中的所需區域的凹凸圖案的狀態。然後，掃描式電子顯微鏡SEMl亦可基於使用光學顯微鏡17l的、試樣W的所需區域的狀態的計測結果（即，形成於所需區域的凹凸圖案的狀態的計測結果），使用束照射裝置1來計測形成於試樣W的相同所需區域的凹凸圖案的狀態。例如，掃描式電子顯微鏡SEMl亦可基於光學顯微鏡17l的計測結果，以照射最適於計測凹凸圖案的電子束EB的方式控制電子束EB的特性後，使用束照射裝置1來計測形成於試樣W的相同所需區域的凹凸圖案的狀態。Alternatively, as described above, a fine uneven pattern is formed on the surface WSu of the sample W. For example, in the case where the sample W is a semiconductor substrate, as an example of a fine concave-convex pattern, a resist coated semiconductor substrate is exposed by an exposure device and developed by a developing device, and the resist remains on the semiconductor substrate Agent pattern. In this case, for example, the scanning electron microscope SEM1 first uses the optical microscope 171 to measure the state of the concavo-convex pattern formed in the desired area in the sample W. Then, the scanning electron microscope SEM1 may use a beam irradiation device based on the measurement result of the state of the desired region of the sample W using the optical microscope 17l (that is, the measurement result of the state of the concavo-convex pattern formed in the desired region). 1. Measure the state of the concavo-convex pattern formed in the same required area of the sample W. For example, the scanning electron microscope SEM1 may control the characteristics of the electron beam EB in such a manner as to irradiate the electron beam EB most suitable for measuring the concave-convex pattern based on the measurement result of the optical microscope 17l, and then use the beam irradiation device 1 to measure the sample W formed. The state of the uneven pattern of the same desired area.
此種第12變形例的掃描式電子顯微鏡SEMl亦可享有與掃描式電子顯微鏡SEM可享有的效果同樣的效果。此外，第12變形例的掃描式電子顯微鏡SEMl與不具備光學顯微鏡17l的比較例的掃描式電子顯微鏡相比較，可使用電子束EB更適當地計測試樣W的狀態。The scanning electron microscope SEM1 of this twelfth modification example can also enjoy the same effects as those of the scanning electron microscope SEM. In addition, the scanning electron microscope SEM1 of the twelfth modified example can more appropriately measure the state of the test sample W using the electron beam EB than the scanning electron microscope of the comparative example that does not include the optical microscope 17l.
再者，所述說明中，掃描式電子顯微鏡SEMl使用光學顯微鏡17l計測試樣W的狀態之後，使用束照射裝置1來計測試樣W的狀態。然而，掃描式電子顯微鏡SEMl亦可同時進行使用光學顯微鏡17l的試樣W的狀態計測、與使用束照射裝置1的試樣W的狀態計測。例如，掃描式電子顯微鏡SEMl亦可使用光學顯微鏡17l及束照射裝置1來同時計測試樣W的所需區域的狀態。或者，掃描式電子顯微鏡SEMl亦可同時進行使用光學顯微鏡17l的試樣W的第一區域的狀態計測、與使用束照射裝置1的試樣W的第二區域（其中，第二區域與第一區域不同）的狀態計測。In the above description, the scanning electron microscope SEM1 uses the optical microscope 171 to measure the state of the test sample W, and then uses the beam irradiation device 1 to measure the state of the test sample W. However, the scanning electron microscope SEM1 may simultaneously perform the state measurement of the sample W using the optical microscope 17l and the state measurement of the sample W using the beam irradiation device 1. For example, the scanning electron microscope SEM1 may use the optical microscope 171 and the beam irradiation device 1 to simultaneously calculate the state of the desired region of the test sample W. Alternatively, the scanning electron microscope SEM1 may simultaneously perform the state measurement of the first region of the sample W using the optical microscope 17l and the second region of the sample W using the beam irradiation device 1 (wherein, the second region and the first region (Different areas) status measurement.
另外，掃描式電子顯微鏡SEMl亦可除了光學顯微鏡17l以外或取而代之，具備於大氣壓環境下可計測試樣W的狀態的任意計測裝置。作為任意計測裝置的一例，可列舉繞射干涉儀。另外，繞射干涉儀例如為將光源光分支而生成計測光及參照光，對因將計測光照射於試樣W所產生的反射光（或者穿透光或散射光）與參照光干涉而產生的干涉圖案進行檢測，從而計測試樣W的狀態的計測裝置。再者，作為任意計測裝置的另一例，可列舉散射計（scatterometer）。散射計為對試樣W照射計測光並接收來自試樣W的散射光（繞射光等）而計測試樣W的狀態的計測裝置。In addition, the scanning electron microscope SEM1 may be provided with or in addition to the optical microscope 171, any measurement device capable of measuring the state of the test sample W under an atmospheric pressure environment. As an example of an arbitrary measurement device, a diffraction interferometer can be cited. In addition, the diffraction interferometer generates measurement light and reference light by branching the light source light, for example, and generates reflected light (or penetrating light or scattered light) generated by irradiating the measurement light on the sample W with interference with the reference light. Measuring device to detect the interference pattern of In addition, as another example of an arbitrary measurement device, a scatterometer can be cited. The scatterometer is a measurement device that irradiates the sample W with measurement light and receives scattered light (diffracted light, etc.) from the sample W to measure the state of the test sample W.
另外，所述的掃描式電子顯微鏡SEMl的說明中，掃描式電子顯微鏡SEM具備光學顯微鏡17l。然而，第1變形例的掃描式電子顯微鏡SEMa～第11變形例的掃描式電子顯微鏡SEMk（進而，後述的第13變形例的掃描式電子顯微鏡SEMm）各自亦可具備光學顯微鏡17l。In the description of the scanning electron microscope SEM1, the scanning electron microscope SEM includes an optical microscope 171. However, each of the scanning electron microscope SEMa of the first modification to the scanning electron microscope SEMk of the eleventh modification (further, the scanning electron microscope SEMm of the thirteenth modification described later) may also include an optical microscope 17l.
（3-13）第13變形例
繼而，一方面參照圖37，一方面對第13變形例的掃描式電子顯微鏡SEMm加以說明。圖37為表示第13變形例的掃描式電子顯微鏡SEMm的結構的剖面圖。(3-13) 13th modification
Next, referring to FIG. 37, the scanning electron microscope SEMm of the thirteenth modification will be described. 37 is a cross-sectional view showing the structure of a scanning electron microscope SEMm according to a thirteenth modification.
如圖37所示，第13變形例的掃描式電子顯微鏡SEMm與所述的掃描式電子顯微鏡SEM相比較，於具備腔室181m及空調機182m的方面不同。掃描式電子顯微鏡SEMm的其他結構亦可與所述的掃描式電子顯微鏡SEM的其他結構相同。As shown in FIG. 37, the scanning electron microscope SEMm of the thirteenth modification is different from the scanning electron microscope SEM described above in that it includes a chamber 181m and an air conditioner 182m. The other structures of the scanning electron microscope SEMm can also be the same as the other structures of the scanning electron microscope SEM.
腔室181m至少收容束照射裝置1、平台裝置2以及支持架3。然而，腔室181m亦可不收容束照射裝置1、平台裝置2以及支持架3的至少一部分。腔室181m亦可收容掃描式電子顯微鏡SEMm所具備的其他構成要件（例如位置計測裝置15、控制裝置4及泵系統5的至少一部分）。The chamber 181m accommodates at least the beam irradiation device 1, the platform device 2, and the support frame 3. However, the chamber 181m may not contain at least a part of the beam irradiation device 1, the platform device 2, and the support frame 3. The chamber 181m may also house other constituent elements (for example, at least a part of the position measuring device 15, the control device 4, and the pump system 5) included in the scanning electron microscope SEMm.
腔室181m的外部空間例如為大氣壓空間。腔室181m的內部的空間（即，至少收容束照射裝置1、平台裝置2以及支持架3的空間）亦例如為大氣壓空間。於該情形時，至少束照射裝置1、平台裝置2及支持架3配置於大氣壓空間。然而，如上文所述，於腔室181m的內部的大氣壓空間內，束照射裝置1形成局部的真空區域VSP。The external space of the chamber 181m is, for example, an atmospheric pressure space. The space inside the chamber 181m (that is, the space that houses at least the beam irradiation device 1, the platform device 2, and the support frame 3) is also an atmospheric pressure space, for example. In this case, at least the beam irradiation device 1, the platform device 2, and the support frame 3 are arranged in the atmospheric pressure space. However, as described above, in the atmospheric pressure space inside the chamber 181m, the beam irradiation device 1 forms a partial vacuum region VSP.
空調機182m對腔室181m的內部空間可供給氣體（例如所述的惰性氣體及潔淨乾燥空氣的至少一者）。空調機182m自腔室181m的內部空間可回收氣體。藉由空調機182m自腔室181m的內部空間回收氣體，而保持腔室181m的內部空間的清潔度良好。此時，空調機182m藉由控制對腔室181m的內部空間供給的氣體的溫度及濕度的至少一者，而可控制腔室181m的內部空間的溫度及濕度的至少一者。The air conditioner 182m can supply gas (for example, at least one of the above-mentioned inert gas and clean dry air) to the internal space of the chamber 181m. The air conditioner 182m can recover gas from the internal space of the chamber 181m. The air conditioner 182m recovers gas from the internal space of the chamber 181m, while keeping the internal space of the chamber 181m clean. At this time, the air conditioner 182m can control at least one of the temperature and humidity of the internal space of the chamber 181m by controlling at least one of the temperature and humidity of the gas supplied to the internal space of the chamber 181m.
此種第13變形例的掃描式電子顯微鏡SEMm可享有與掃描式電子顯微鏡SEM可享有的效果同樣的效果。The scanning electron microscope SEMm of this thirteenth modification example can enjoy the same effect as that of the scanning electron microscope SEM.
再者，所述的掃描式電子顯微鏡SEMm的說明中，掃描式電子顯微鏡SEM具備腔室181m及空調機182m。然而，第1變形例的掃描式電子顯微鏡SEMa～第12變形例的掃描式電子顯微鏡SEMl各自亦可具備腔室181m及空調機182m。In addition, in the above description of the scanning electron microscope SEMm, the scanning electron microscope SEM includes a chamber 181m and an air conditioner 182m. However, the scanning electron microscope SEMa of the first modification to the scanning electron microscope SEM1 of the twelfth modification may each include a chamber 181m and an air conditioner 182m.
（3-14）第14變形例
所述說明中，試樣W具有大至真空區域VSP僅可覆蓋試樣W的表面WSu中的一部分的程度的尺寸。另一方面，第14變形例中，如作為表示於第14變形例中平台22保持試樣W的狀況的剖面圖的圖38所示，試樣W亦可具有小至真空區域VSP可覆蓋試樣W的整個表面WSu的程度的尺寸。或者，試樣W亦可具有小至真空區域VSP所含的束通過空間SPb3可覆蓋試樣W的整個表面WSu的程度的尺寸。於該情形時，如圖38所示，差動排氣系統12所形成的真空區域VSP除了覆蓋試樣W的表面WSu及/或面向（即，接觸）試樣W的表面WSu以外，亦可覆蓋平台22的表面（例如平台22的表面中與保持面HS不同的外周面OS）的至少一部分，及/或亦可面向平台22的表面（例如外周面OS）的至少一部分。外周面OS典型而言包含位於保持面HS的周圍的面。再者，圖38為了方便說明，表示掃描式電子顯微鏡SEM向第14變形例中說明的尺寸小的試樣W照射電子束EB的例子，但當然第1變形例的掃描式電子顯微鏡SEMa～第13變形例的掃描式電子顯微鏡SEMm各自亦可向第14變形例中說明的尺寸小的試樣W照射電子束EB。(3-14) The 14th modification
In the above description, the sample W has a size so large that the vacuum region VSP can cover only a part of the surface WSu of the sample W. On the other hand, in the fourteenth modification example, as shown in FIG. 38 as a cross-sectional view showing the state where the stage 22 holds the sample W in the fourteenth modification example, the sample W may also have a small vacuum area VSP to cover the test The size of the entire surface WSu of the sample W. Alternatively, the sample W may have a size so small that the beam passage space SPb3 contained in the vacuum region VSP can cover the entire surface WSu of the sample W. In this case, as shown in FIG. 38, the vacuum area VSP formed by the differential exhaust system 12 may also cover the surface WSu of the sample W and/or the surface WSu facing (ie, contacting) the sample W At least a part of the surface of the platform 22 (for example, the outer peripheral surface OS different from the holding surface HS in the surface of the platform 22), and/or at least a part of the surface of the platform 22 (for example, the outer peripheral surface OS) may also be faced. The outer peripheral surface OS typically includes a surface located around the holding surface HS. Furthermore, FIG. 38 shows an example in which the scanning electron microscope SEM irradiates the small-size sample W described in the fourteenth modification with an electron beam EB for convenience of description, but of course the scanning electron microscope SEMa through the first modification The scanning electron microscope SEMm of the 13th modification may also irradiate the electron beam EB to the sample W of the small size described in the 14th modification.
第14變形例中，掃描式電子顯微鏡SEM亦可代替束射出裝置1的射出面121LS與試樣W的表面WSu之間的間隔D成為所需間隔D_target，而以射出面121LS與平台22的表面（例如，外周面OS）之間的間隔Do1成為所需間隔D_target的方式，來控制間隔調整系統14及平台驅動系統23的至少一者。In the fourteenth modification, the scanning electron microscope SEM may replace the distance D between the emission surface 121LS of the beam emitting device 1 and the surface WSu of the sample W to a desired distance D_target, and use the emission surface 121LS and the surface of the stage 22 The interval Do1 (for example, the outer peripheral surface OS) is such that at least one of the interval adjustment system 14 and the platform drive system 23 is controlled so that the interval D_target is required.
（3-15）第15變形例
所述的第14變形例中，平台22的保持面HS與平台22的外周面OS位於相同高度。另一方面，於第15變形例中，如作為表示於第15變形例中平台22保持試樣W的狀況的剖面圖的圖39所示，保持面HS與外周面OS亦可位於不同高度（即，Z軸方向上不同的位置）。圖38表示保持面HS位於低於外周面OS的位置的例子，但保持面HS亦可位於高於外周面OS的位置。於保持面HS位於低於外周面OS的位置的情形時，可謂於平台22中實質上形成有收容試樣W的收容空間（即，以可收容試樣W的方式凹陷的空間）。另外，圖38表示外周面OS位於較試樣W的表面WSu更高的位置的例子，但外周面OS亦可位於低於表面WSu的位置，或外周面OS亦可位於與表面WSu相同的高度。再者，圖39為了方便說明，表示掃描式電子顯微鏡SEM向第15變形例中說明的高度與外周面OS不同的保持面HS上所保持的試樣W照射電子束EB的例子，但當然第1變形例的掃描式電子顯微鏡SEMa～第13變形例的掃描式電子顯微鏡SEMm各自亦可向第15變形例中說明的高度與外周面OS不同的保持面HS上所保持的試樣W照射電子束EB。(3-15) 15th modification
In the fourteenth modification described above, the holding surface HS of the platform 22 and the outer peripheral surface OS of the platform 22 are at the same height. On the other hand, in the fifteenth modification, as shown in FIG. 39 as a cross-sectional view showing the state where the stage 22 holds the sample W in the fifteenth modification, the holding surface HS and the outer peripheral surface OS may be located at different heights ( That is, different positions in the Z-axis direction). FIG. 38 shows an example in which the holding surface HS is located lower than the outer peripheral surface OS, but the holding surface HS may be located higher than the outer peripheral surface OS. When the holding surface HS is located at a position lower than the outer peripheral surface OS, it can be said that a storage space for storing the sample W (that is, a space recessed to accommodate the sample W) is substantially formed in the platform 22. In addition, FIG. 38 shows an example in which the outer peripheral surface OS is located higher than the surface WSu of the sample W, but the outer peripheral surface OS may be located lower than the surface WSu, or the outer peripheral surface OS may be located at the same height as the surface WSu . 39 for convenience of description, the scanning electron microscope SEM shows an example in which the electron beam EB is irradiated to the sample W held on the holding surface HS having a height different from that of the outer peripheral surface OS described in the fifteenth modification. 1 Scanning electron microscope SEMa of the modification example to the scanning electron microscope SEMm of the 13th modification example may irradiate electrons to the sample W held on the holding surface HS having a height different from the outer peripheral surface OS described in the 15th modification example. Beam EB.
第15變形例中，與第14變形例同樣地，試樣W亦可具有小至真空區域VSP可覆蓋試樣W的整個表面WSu的程度的尺寸。於該情形時，與第14變形例同樣地，形成差動排氣系統12的真空區域VSP除了覆蓋試樣W的表面WSu及/或面向試樣W的表面WSu以外，亦可覆蓋平台22的表面（例如外周面OS）的至少一部分，及/或亦可面向平台22的表面（例如外周面OS）的至少一部分。或者，試樣W亦可具有大至真空區域VSP僅可覆蓋試樣W的表面WSu中的一部分的程度的尺寸。於該情形時，差動排氣系統12所形成的真空區域VSP覆蓋試樣W的表面WSu的一部分及/或面向試樣W的表面WSu的一部分，另一方面，亦可不覆蓋平台22的表面（例如，外周面OS）的至少一部分，及/或亦可不面向平台22的表面（例如外周面OS）的至少一部分。In the fifteenth modification, as in the fourteenth modification, the sample W may have a size so small that the vacuum region VSP can cover the entire surface WSu of the sample W. In this case, the vacuum region VSP forming the differential exhaust system 12 may cover the surface WSu of the sample W and/or the surface WSu facing the sample W as well as the surface WSu of the sample W, as in the fourteenth modification. At least a portion of the surface (eg, outer peripheral surface OS), and/or may also face at least a portion of the surface of the platform 22 (eg, outer peripheral surface OS). Alternatively, the sample W may have a size so large that the vacuum region VSP can cover only a part of the surface WSu of the sample W. In this case, the vacuum region VSP formed by the differential exhaust system 12 covers a part of the surface WSu of the sample W and/or a part of the surface WSu facing the sample W, on the other hand, it may not cover the surface of the platform 22 (For example, at least a part of the outer peripheral surface OS), and/or may not face at least a part of the surface of the platform 22 (for example, the outer peripheral surface OS).
於第15變形例中，亦與第14變形例同樣地，掃描式電子顯微鏡SEM亦可代替射出面121LS與表面WSu之間的間隔D成為所需間隔D_target，而以射出面121LS與平台22的表面（例如，外周面OS）之間的間隔Do1成為所需間隔D_target的方式，來控制間隔調整系統14及平台驅動系統23的至少一者。In the fifteenth modified example, similarly to the fourteenth modified example, the scanning electron microscope SEM may replace the interval D between the injection surface 121LS and the surface WSu as the desired interval D_target, and use the injection surface 121LS and the platform 22 The interval Do1 between the surfaces (for example, the outer peripheral surface OS) becomes at least one of the interval adjustment system 14 and the platform driving system 23 so that the interval D_target is required.
（3-16）第16變形例
第16變形例中，如作為表示於第16變形例中平台22保持試樣W的狀況的剖面圖的圖40所示，試樣W亦可藉由蓋構件25加以覆蓋。即，亦可於在試樣W與束照射裝置1（尤其是射出面121LS）之間配置有蓋構件25的狀態下，將電子束EB照射於試樣W。此時，亦可於蓋構件25形成有貫通孔，電子束EB亦可經由蓋構件25的貫通孔而照射於試樣W。蓋構件25亦能以與試樣W的表面WSu接觸的方式或以與表面WSu之間確保間隙的方式配置於試樣W的上方。於該情形時，差動排氣系統12亦可形成將蓋構件25的表面25s的至少一部分覆蓋的真空區域VSP，代替將試樣W的表面WSu的至少一部分覆蓋的真空區域VSP。差動排氣系統12亦可形成與蓋構件25的表面25s接觸的真空區域VSP，代替與試樣W的表面WSu接觸的真空區域VSP。再者，圖40為了方便說明，表示了掃描式電子顯微鏡SEM向第16變形例中說明的經蓋構件25覆蓋的試樣W照射電子束EB的例子，但當然第1變形例的掃描式電子顯微鏡SEMa～第13變形例的掃描式電子顯微鏡SEMm各自亦可向第16變形例中說明的經蓋構件25覆蓋的試樣W照射電子束EB。(3-16) Sixteenth modification
In the sixteenth modification, as shown in FIG. 40 as a cross-sectional view showing the state where the stage 22 holds the sample W in the sixteenth modification, the sample W may be covered by the cover member 25. That is, the sample W may be irradiated with the electron beam EB in a state where the cover member 25 is disposed between the sample W and the beam irradiation device 1 (particularly, the emission surface 121LS). At this time, a through hole may be formed in the cover member 25, and the electron beam EB may be irradiated to the sample W through the through hole of the cover member 25. The cover member 25 can also be arranged above the sample W so as to be in contact with the surface WSu of the sample W or to ensure a gap between the surface WSu. In this case, the differential exhaust system 12 may form a vacuum region VSP covering at least a part of the surface 25s of the cover member 25 instead of the vacuum region VSP covering at least a part of the surface WSu of the sample W. The differential exhaust system 12 may form a vacuum region VSP in contact with the surface 25s of the cover member 25 instead of the vacuum region VSP in contact with the surface WSu of the sample W. FIG. 40 shows an example in which the scanning electron microscope SEM irradiates the sample W covered with the cover member 25 described in the sixteenth modification with the electron beam EB for convenience of explanation, but of course the scanning electron of the first modification Each of the scanning electron microscope SEMm of the microscope SEMa to the thirteenth modification example may irradiate the electron beam EB to the sample W covered with the cover member 25 described in the sixteenth modification example.
蓋構件25的表面25s亦可位於與退避構件223的上表面ES相同的高度。於該情形時，退避構件223亦可用於伴隨平台22的移動而束照射裝置1於蓋構件25與退避構件223之間移動的情形時，維持真空區域VSP。第2變形例中，亦可將蓋構件25與退避構件223之間的空間的至少一部分排氣。第3變形例中，亦可將蓋構件25載置於平台22，以使蓋構件25與退避構件223之間的間隔，與蓋構件25與外周構件222中的退避構件223以外的部分之間的間隔不同。第7變形例中，外周構件222g亦可與基於試樣W的表面WSu與外周構件222g的上表面OS的相對位置而移動的情形同樣地，基於蓋構件25的表面25s與外周構件222g的上表面OS的相對位置而移動。第9變形例中，真空區域VSP的移動源的面及/或移動目標的面亦可除了試樣W的表面WSu以外或取而代之，包含蓋構件25的表面25s的至少一部分。The surface 25s of the cover member 25 may be located at the same height as the upper surface ES of the retreat member 223. In this case, the retreat member 223 can also be used to maintain the vacuum region VSP when the beam irradiation device 1 moves between the cover member 25 and the retreat member 223 as the platform 22 moves. In the second modification, at least a part of the space between the cover member 25 and the retracting member 223 may be exhausted. In the third modification, the cover member 25 may be placed on the platform 22 so that the distance between the cover member 25 and the retreat member 223 is different from the portion of the cover member 25 and the outer peripheral member 222 other than the retreat member 223 The interval is different. In the seventh modification, the outer peripheral member 222g may be moved based on the relative position of the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222g, the upper surface 25s of the cover member 25 and the upper surface of the outer peripheral member 222g The relative position of the surface OS moves. In the ninth modification, the movement source surface and/or the movement target surface of the vacuum region VSP may include at least a part of the surface 25s of the cover member 25 in addition to or instead of the surface WSu of the sample W.
第16變形例中，試樣W亦可具有小至真空區域VSP可覆蓋試樣W的整個表面WSu的程度的尺寸，或亦可具有大至真空區域VSP僅可覆蓋試樣W的表面WSu中的一部分的程度的尺寸。In the sixteenth modification, the sample W may have a size so small that the vacuum region VSP can cover the entire surface WSu of the sample W, or may have a size so large that the vacuum region VSP can cover only the surface WSu of the sample W Part of the size of the size.
第16變形例中，掃描式電子顯微鏡SEM亦可代替射出面121LS與表面WSu之間的間隔D成為所需間隔D_target，而以射出面121LS與蓋構件25的表面25s之間的間隔Do2成為所需間隔D_target的方式，來控制間隔調整系統14及平台驅動系統23的至少一者。In the sixteenth modification, the scanning electron microscope SEM may replace the interval D between the emission surface 121LS and the surface WSu as the desired interval D_target, and the interval Do2 between the emission surface 121LS and the surface 25s of the cover member 25 may be The interval D_target is required to control at least one of the interval adjustment system 14 and the platform driving system 23.
（3-17）其他變形例
所述說明中，外周構件222包含於沿著XY平面的一個方向上與保持構件221鄰接的退避構件223。然而，外周構件222亦可包含於沿著XY平面的多個不同方向上與保持構件221分別鄰接的多個退避構件223。例如，如圖41（a）所示，外周構件222亦可包含於較保持構件221更靠-Y側與保持構件221鄰接的退避構件223-1、及於較保持構件221更靠+Y側與保持構件221鄰接的退避構件223-2。例如，如圖41（b）所示，外周構件222亦可包含於較保持構件221更靠-Y側與保持構件221鄰接的退避構件223-1、於較保持構件221更靠+Y側與保持構件221鄰接的退避構件223-2、於較保持構件221更靠-X側與保持構件221鄰接的退避構件223-3、及於較保持構件221更靠+X側與保持構件221鄰接的退避構件223-4。於該情形時，各退避構件223-1～退避構件223-1可與所述的退避構件223同樣地利用。(3-17) Other modified examples
In the above description, the outer peripheral member 222 is included in the retraction member 223 adjacent to the holding member 221 in one direction along the XY plane. However, the outer peripheral member 222 may be included in a plurality of retraction members 223 adjacent to the holding member 221 in a plurality of different directions along the XY plane. For example, as shown in FIG. 41( a ), the outer peripheral member 222 may be included on the -Y side of the holding member 221 adjacent to the holding member 221 and the holding member 221 adjacent to the holding member 221 on the +Y side of the holding member 221 The retraction member 223-2 adjacent to the holding member 221. For example, as shown in FIG. 41(b), the outer peripheral member 222 may be included in the retraction member 223-1 that is adjacent to the -Y side of the holding member 221 and adjacent to the holding member 221, and on the +Y side of the holding member 221. The retraction member 223-2 adjacent to the holding member 221, the retraction member 223-3 adjacent to the holding member 221 on the -X side of the holding member 221, and the adjacent adjacent holding member 221 on the +X side of the holding member 221 Evacuation member 223-4. In this case, each of the retraction members 223-1 to 223-1 can be used in the same manner as the retraction member 223 described above.
所述說明中，差動排氣系統12具備具有單一的排氣機構（具體而言，排氣槽124及配管125）的一段式差動排氣系統。然而，亦可為具備多個排氣機構的多段式差動排氣系統。於該情形時，於真空形成構件121的射出面121LS形成有多個排氣槽124，於真空形成構件121形成有與多個排氣槽124分別連通的多個配管125。多個配管125分別連接於泵系統5所具備的多個真空泵52。多個真空泵52的排氣能力可相同，亦可不同。In the above description, the differential exhaust system 12 includes a one-stage differential exhaust system having a single exhaust mechanism (specifically, the exhaust groove 124 and the piping 125). However, it may also be a multi-stage differential exhaust system equipped with multiple exhaust mechanisms. In this case, a plurality of exhaust grooves 124 are formed on the emission surface 121LS of the vacuum forming member 121, and a plurality of pipes 125 communicating with the plurality of exhaust grooves 124 are formed on the vacuum forming member 121, respectively. The plurality of pipes 125 are respectively connected to the plurality of vacuum pumps 52 included in the pump system 5. The exhaust capacity of the multiple vacuum pumps 52 may be the same or different.
不限於掃描式電子顯微鏡SEM，將電子束EB照射於試樣W（或其他任意物體）的任意的電子束裝置亦可具有與所述的掃描式電子顯微鏡SEM同樣的結構。即，任意的電子束裝置亦可具備所述的平台22。作為任意的電子束裝置的一例，可列舉：藉由使用電子束EB對塗佈有電子束抗蝕劑的晶圓進行曝光而於晶圓形成圖案的電子束曝光裝置、及利用將電子束EB照射於母材所產生的熱而將母材焊接的電子束焊接裝置的至少一者。Not limited to the scanning electron microscope SEM, any electron beam device that irradiates the electron beam EB to the sample W (or any other object) may have the same structure as the scanning electron microscope SEM described above. That is, any electron beam device may include the platform 22 described above. As an example of an arbitrary electron beam device, an electron beam exposure device that forms a pattern on a wafer by exposing an electron beam resist-coated wafer using an electron beam EB, and using the electron beam EB At least one of electron beam welding devices that irradiates heat generated by the base material and welds the base material.
或者，不限於電子束裝置，將與電子束EB不同的任意的帶電粒子束或能量束（例如離子束）照射於任意的試樣W（或其他任意物體）、的任意的束裝置亦可具有與所述的掃描式電子顯微鏡SEM同樣的結構。即，具備可照射帶電粒子束或能量束的束光學系統的任意的束裝置亦可具備所述的平台22。作為任意的束裝置的一例，可列舉：將經聚焦的離子束照射於試樣而進行加工或觀察的聚焦離子束（Focused Ion Beam，FIB）裝置、及藉由使用軟X射線區域（例如5 nm～15 nm的波長範圍）的極紫外（Extreme Ultraviolet，EUV）光對塗佈有抗蝕劑的晶圓進行曝光而於晶圓形成圖案的EUV曝光裝置的至少一者。或者，不限於束裝置，將包含電子的任意帶電粒子以與束不同的照射形態照射於任意的試樣W（或其他任意物體）的、任意的照射裝置亦可具有與所述的掃描式電子顯微鏡SEM同樣的結構。即，具備可照射（例如發射、生成、噴出或）帶電粒子的照射系統的任意的照射裝置亦可具備所述的平台22。作為任意的照射裝置的一例，可列舉：使用電漿對物體進行蝕刻的蝕刻裝置、及使用電漿對物體進行成膜處理的成膜裝置（例如濺鍍裝置等物理氣相沈積（Physical Vapor Deposition，PVD）裝置及化學氣相沈積（Chemical Vapor Deposition，CVD）裝置的至少一者）的至少一者。Or, it is not limited to the electron beam device. Any charged particle beam or energy beam (for example, ion beam) different from the electron beam EB is irradiated to any sample W (or any other object), and any beam device may have It has the same structure as the scanning electron microscope SEM described above. That is, any beam device including a beam optical system capable of irradiating a charged particle beam or an energy beam may also include the platform 22 described above. As an example of an arbitrary beam device, a focused ion beam (Focused Ion Beam, FIB) device for processing or observation by irradiating a focused ion beam to a sample, and by using a soft X-ray region (for example, 5 (Extreme Ultraviolet (EUV) light in the wavelength range of nm to 15 nm) at least one of EUV exposure devices that exposes a wafer coated with a resist and forms a pattern on the wafer. Or, not limited to the beam device, any irradiated device that irradiates any charged particles containing electrons to an arbitrary sample W (or any other object) in an irradiation form different from the beam may also have the scanning electrons Microscope SEM has the same structure. That is, any irradiation device equipped with an irradiation system capable of irradiating (eg, emitting, generating, ejecting, or discharging) charged particles may also include the platform 22 described above. As an example of an arbitrary irradiation device, an etching device that uses plasma to etch an object, and a film forming device that uses plasma to form an object to a film (for example, physical vapor deposition such as a sputtering device) , At least one of a PVD) device and a chemical vapor deposition (Chemical Vapor Deposition, CVD) device).
或者，不限於帶電粒子，使任意的物質以與照射不同的形態於真空下作用於任意的試樣W（或其他任意物體）的、任意的真空裝置亦可具有與所述的第1實施形態的掃描式電子顯微鏡SEMa～第13實施形態的掃描式電子顯微鏡SEMm中的至少一個同樣的結構。作為任意的真空裝置的一例，可列舉藉由在真空中使經蒸發或昇華的材料的蒸氣到達試樣並蓄積而形成膜的真空蒸鍍裝置。Or, not limited to charged particles, any vacuum device that allows any substance to act on any sample W (or any other object) under vacuum in a different form from irradiation may also have the first embodiment described above. SEMa of the scanning electron microscope to at least one of the scanning electron microscope SEMm of the thirteenth embodiment have the same structure. As an example of an arbitrary vacuum device, a vacuum vapor deposition device that forms a film by allowing vapor of a material evaporated or sublimated to reach a sample in a vacuum and accumulate.
（4）附記
關於以上所說明的實施形態，進而揭示以下的附記。
[附記1]
一種局部真空裝置，包括：真空形成構件，可局部地形成將物體的一部分表面覆蓋且和所述物體接觸的真空區域；保持裝置，具有可保持所述物體的保持面；外部面，位於所述保持面的周圍的至少一部分；以及位置變更裝置，變更沿著與所述保持面上保持的所述物體的表面交叉的既定方向的、所述物體的表面與所述外部面的相對位置。
[附記2]
如附記1所記載的局部真空裝置，其中所述位置變更裝置使所述外部面沿著所述既定方向移動而變更所述相對位置。
[附記3]
如附記1或2所記載的局部真空裝置，其中所述位置變更裝置根據所述物體的表面中和所述真空區域接觸的面部分與所述外部面的、所述既定方向上的相對位置，來變更所述物體的表面與所述外部面的相對位置。
[附記4]
如附記1至3中任一項所記載的局部真空裝置，其中所述位置變更裝置沿所述既定方向變更所述物體的表面與所述外部面的相對位置，使所述物體的周緣部的所述既定方向上的位置、與所述外部面的物體側的周緣部的既定方向上的位置對齊。
[附記5]
如附記1至4中任一項所記載的局部真空裝置，其中所述位置變更裝置沿所述既定方向變更所述物體的表面與所述外部面的相對位置，於所述既定方向上，使所述外部面位於與所述物體的表面中和所述真空區域接觸的面部分相同的平面內。
[附記6]
如附記1至5中任一項所記載的局部真空裝置，其中所述位置變更裝置沿所述既定方向變更所述物體的表面與所述外部面的相對位置，於所述既定方向上，使所述外部面較所述物體的表面中和所述真空區域接觸的面部分而更靠近所述保持面。
[附記7]
如附記1至6中任一項所記載的局部真空裝置，其中所述位置變更裝置為第一位置變更裝置，且所述局部真空裝置包括：第二位置變更裝置，可變更沿著所述物體的表面的方向上的、所述真空形成構件與所述物體的相對位置。
[附記8]
一種局部真空裝置，包括：真空形成構件，於物體上的空間中可局部地形成將所述物體的一部分表面覆蓋的真空區域；保持裝置，具有可保持所述物體的保持面；以及外部面，位於所述保持面的周圍的至少一部分，所述外部面以根據所述物體的厚度的標準值的範圍而規定的既定量，於自所述保持面朝向所述物體的表面的方向上自所述保持面突出。
[附記9]
如附記8所記載的局部真空裝置，其中所述既定量為所述物體的厚度的標準上的最小值以下。
[附記10]
如附記1至9中任一項所記載的局部真空裝置，其中所述真空區域與所述物體的表面的一部分接觸。
[附記11]
如附記1至10中任一項所記載的局部真空裝置，其中於形成有所述真空區域時，所述物體的表面的至少另一部分由非真空區域、或真空度低於所述真空區域的區域所覆蓋。
[附記12]
如附記1至11中任一項所記載的局部真空裝置，其中所述真空形成構件具有：以與所述物體的表面相向的方式設置且具備與排氣裝置連通的開口的面。
[附記13]
如附記12所記載的局部真空裝置，其中所述開口為第一開口，且於所述面的所述第一開口的周圍具有第二開口。
[附記14]
如附記13所記載的局部真空裝置，其中所述第一開口內的空間的真空度高於所述第二開口內的空間的真空度。
[附記15]
如附記1至14中任一項所記載的局部真空裝置，其中所述真空形成構件為與所述物體的表面具有間隙而配置，且藉由將所述真空形成構件的與所述表面相向的部分的所述物體側的空間排氣而形成真空的、差動排氣方式的真空形成構件。
[附記16]
如附記1至15中任一項所記載的局部真空裝置，其中所述真空區域的氣壓為1×10-3
Pa以下。
[附記17]
如附記1至16中任一項所記載的局部真空裝置，其中所述真空形成構件與所述物體之間的距離為1 μm以上且10 μm以下。
[附記18]
一種帶電粒子裝置，包括：如附記1至17中任一項所記載的局部真空裝置；以及帶電粒子照射裝置，經由所述真空區域的至少一部分向所述物體照射帶電粒子。
[附記19]
如附記18所記載的帶電粒子裝置，其中所述真空形成構件於所述照射裝置、與由所述帶電粒子照射的所述物體上的照射區域之間的空間中，形成真空度較與所述空間不同的區域的真空度更高的真空區域。
[附記20]
一種真空區域的形成方法，包括：局部地形成將保持面保持的物體的一部分表面覆蓋且和所述物體接觸的真空區域；以及變更沿著與所述保持面上保持的所述物體的表面交叉的既定方向的、所述物體的表面與位於所述保持面的周圍的至少一部分的外部面的相對位置。(4) Supplementary notes The following supplementary notes are further disclosed regarding the embodiment described above. [Supplementary Note 1] A partial vacuum device, including: a vacuum forming member that can partially form a vacuum area that covers a part of the surface of an object and comes into contact with the object; a holding device having a holding surface that can hold the object; an external surface , At least a part around the holding surface; and a position changing device that changes the surface of the object and the outer surface along a predetermined direction crossing the surface of the object held on the holding surface relative position. [Supplementary note 2] The partial vacuum device according to supplementary note 1, wherein the position changing device moves the external surface in the predetermined direction to change the relative position. [Supplementary Note 3] The partial vacuum device according to Supplementary Note 1 or 2, wherein the position changing device is based on the predetermined direction of the surface portion of the surface of the object that is in contact with the vacuum area and the external surface in the predetermined direction To change the relative position of the surface of the object and the external surface. [Supplementary note 4] The partial vacuum device according to any one of supplementary notes 1 to 3, wherein the position changing device changes the relative position of the surface of the object and the external surface in the predetermined direction so that the object The position of the peripheral edge portion in the predetermined direction is aligned with the position of the peripheral edge portion of the outer surface in the predetermined direction. [Supplementary note 5] The partial vacuum device according to any one of supplementary notes 1 to 4, wherein the position changing device changes the relative position of the surface of the object and the external surface in the predetermined direction, in the predetermined In the direction, the outer surface is located in the same plane as the surface portion of the surface of the object that is in contact with the vacuum region. [Supplementary note 6] The partial vacuum device according to any one of supplementary notes 1 to 5, wherein the position changing device changes the relative position of the surface of the object and the external surface in the predetermined direction, in the predetermined In the direction, the outer surface is brought closer to the holding surface than the surface portion of the surface of the object that is in contact with the vacuum area. [Supplementary note 7] The partial vacuum device as described in any one of supplementary notes 1 to 6, wherein the position changing device is a first position changing device, and the partial vacuum device includes: a second position changing device, which can change the edge The relative position of the vacuum forming member and the object in the direction of the surface of the object. [Supplementary Note 8] A partial vacuum device, including: a vacuum forming member that can partially form a vacuum area covering a part of the surface of the object in a space on the object; a holding device having a holding surface that can hold the object; And an outer surface, located at least a part of the periphery of the holding surface, the outer surface having a predetermined amount specified according to a range of the standard value of the thickness of the object, facing the surface of the object from the holding surface Protrudes from the holding surface in the direction. [Supplementary Note 9] The partial vacuum device according to Supplementary Note 8, wherein the predetermined amount is equal to or less than the standard minimum value of the thickness of the object. [Supplementary Note 10] The partial vacuum device according to any one of Supplementary notes 1 to 9, wherein the vacuum region is in contact with a part of the surface of the object. [Supplementary note 11] The partial vacuum device according to any one of supplementary notes 1 to 10, wherein when the vacuum area is formed, at least another part of the surface of the object is formed by a non-vacuum area, or the vacuum degree is lower than The area covered by the vacuum area is covered. [Supplementary note 12] The partial vacuum device according to any one of supplementary notes 1 to 11, wherein the vacuum forming member has a surface provided facing the surface of the object and having an opening communicating with the exhaust device . [Supplementary note 13] The partial vacuum device according to supplementary note 12, wherein the opening is a first opening, and a second opening is provided around the first opening of the surface. [Supplementary Note 14] The partial vacuum device according to Supplementary Note 13, wherein the vacuum degree of the space in the first opening is higher than the vacuum degree of the space in the second opening. [Supplementary note 15] The partial vacuum device according to any one of supplementary notes 1 to 14, wherein the vacuum forming member is arranged with a gap from the surface of the object, and by The space on the object side of the portion facing the surface is exhausted to form a vacuum, a differential exhaust type vacuum forming member. [Supplementary Note 16] The partial vacuum device according to any one of Supplementary notes 1 to 15, wherein the air pressure in the vacuum region is 1×10 -3 Pa or less. [Supplementary Note 17] The partial vacuum device according to any one of Supplementary notes 1 to 16, wherein the distance between the vacuum forming member and the object is 1 μm or more and 10 μm or less. [Supplementary Note 18] A charged particle device comprising: a partial vacuum device as described in any one of Supplementary Notes 1 to 17; and a charged particle irradiation device that irradiates the object with charged particles through at least a part of the vacuum region. [Supplementary note 19] The charged particle device according to supplementary note 18, wherein the vacuum forming member forms a degree of vacuum in the space between the irradiation device and the irradiation area on the object irradiated with the charged particles A vacuum area that has a higher degree of vacuum than the area different from the space. [Supplementary Note 20] A method of forming a vacuum area, comprising: locally forming a vacuum area covering a part of the surface of an object held by a holding surface and in contact with the object; The relative position of the surface of the object in a predetermined direction where the surface of the object crosses at least a part of the external surface located around the holding surface.
所述各實施形態（包含各變形例，以下在本段落中相同）的構成要件的至少一部分可與所述各實施形態的構成要件的至少另一部分適當組合。亦可不使用所述各實施形態的構成要件中的一部分。另外，只要法令容許，則將所述各實施形態中引用的所有公開公報及美國專利的揭示援用而作為本文的記載的一部分。At least a part of the constituent elements of each of the above-mentioned embodiments (including various modifications, and the same in the following paragraphs) can be appropriately combined with at least another part of the constituent elements of each of the above-mentioned embodiments. It is not necessary to use some of the constituent elements of the above-mentioned embodiments. In addition, as long as the law permits, all publications cited in the above-mentioned embodiments and the disclosure of the US patent are incorporated as part of the description herein.
本發明不限於所述實施形態，可於不違反自申請專利範圍及說明書總體所讀取的發明的主旨或思想的範圍內適當變更，伴有此種變更的局部真空裝置、帶電粒子裝置、真空區域的形成方法、以及帶電粒子的照射方法亦包含於本發明的技術範圍內。The present invention is not limited to the above-mentioned embodiments, and can be appropriately changed within a range that does not violate the gist or ideas of the invention read from the scope of the patent application and the specification as a whole, and the partial vacuum device, charged particle device, vacuum The method of forming the region and the method of irradiating the charged particles are also included in the technical scope of the present invention.
