JP2020155320A - Local vacuum device, charged particle device, and vacuum region forming method - Google Patents

Local vacuum device, charged particle device, and vacuum region forming method Download PDF

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JP2020155320A
JP2020155320A JP2019052924A JP2019052924A JP2020155320A JP 2020155320 A JP2020155320 A JP 2020155320A JP 2019052924 A JP2019052924 A JP 2019052924A JP 2019052924 A JP2019052924 A JP 2019052924A JP 2020155320 A JP2020155320 A JP 2020155320A
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vacuum
space
sample
state
vacuum region
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貴行 舩津
Takayuki Funatsu
貴行 舩津
龍 菅原
Tatsu Sugawara
龍 菅原
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Nikon Corp
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Nikon Corp
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Priority to PCT/JP2019/013225 priority patent/WO2019189376A1/en
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Abstract

To maintain a vacuum region properly.SOLUTION: A local vacuum device has a pipeline connectable to an exhaust device, and includes a vacuum forming member that forms a vacuum region by discharging gas in a space in contact with the surface of an object through the pipeline, an external surface which is located at least partially around the object, and a position changing device for changing a relative position between the surface of the object and the external surface along a predetermined direction intersecting to the surface of the object. At least a part of the gas in a space of the vacuum region which is higher in atmospheric pressure than the surrounding vacuum region is discharged via the pipeline of the vacuum forming member.SELECTED DRAWING: Figure 22

Description

本発明は、例えば、局所的な真空領域を形成する局所真空装置、局所的な真空領域を介して荷電粒子を照射する荷電粒子装置、及び、局所的な真空領域の形成方法の技術分野に関する。 The present invention relates to, for example, a local vacuum apparatus for forming a local vacuum region, a charged particle apparatus for irradiating charged particles through the local vacuum region, and a technical field of a method for forming a local vacuum region.

荷電粒子を照射する装置は、荷電粒子が気体分子との衝突によって散乱してしまうことを防止するために、真空領域を介して荷電粒子を照射する。例えば、特許文献1には、荷電粒子の一例である電子ビームが照射される被検物の検査対象部分の周囲を外気から遮断して局所的な真空領域を形成する走査型電子顕微鏡が記載されている。このような装置(更には、真空領域を形成する任意の装置)では、形成した真空領域を適切に維持することが課題となる。 A device that irradiates a charged particle irradiates the charged particle through a vacuum region in order to prevent the charged particle from being scattered by collision with a gas molecule. For example, Patent Document 1 describes a scanning electron microscope that forms a local vacuum region by blocking the periphery of an inspection target portion of a test object irradiated with an electron beam, which is an example of charged particles, from the outside air. ing. In such a device (furthermore, any device that forms a vacuum region), it is an issue to properly maintain the formed vacuum region.

米国特許出願公開第2004/0144928号明細書U.S. Patent Application Publication No. 2004/01/44928

第1の態様によれば、排気装置と接続可能な管路を有し、物体の面に接する空間の気体を前記管路を介して排出して、真空領域を形成する真空形成部材と、前記物体の周囲の少なくとも一部に位置する外部面と、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置とを備え、前記真空領域の周囲の前記真空領域よりも気圧が高い空間の少なくとも一部の気体は、前記真空形成部材の前記管路を介して排出される局所真空装置が提供される。 According to the first aspect, a vacuum forming member having a conduit that can be connected to an exhaust device and discharging gas in a space in contact with the surface of an object through the conduit to form a vacuum region, and the vacuum forming member. A position changing device for changing the relative position between the surface of the object and the external surface along a predetermined direction intersecting the surface of the object with an external surface located at least a part of the periphery of the object. A local vacuum device is provided in which at least a part of the gas in a space around the vacuum region having a pressure higher than that of the vacuum region is discharged through the conduit of the vacuum forming member.

第2の態様によれば、排気装置と接続される第1端と物体の面に接する第1空間と接続される第2端とを有する管路を備え、前記第1空間の気体を前記管路を介して排出して、前記第1空間と接続される第2空間よりも圧力が低い真空領域を前記第1空間に形成する真空形成部材と、前記物体の周囲の少なくとも一部に位置する外部面と、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置とを備える局所真空装置が提供される。 According to the second aspect, the pipe has a first end connected to the exhaust device and a second end connected to the first space in contact with the surface of the object, and the gas in the first space is supplied to the pipe. A vacuum forming member that discharges through a path and forms a vacuum region having a lower pressure than the second space connected to the first space in the first space, and is located at least a part around the object. Provided is a local vacuum apparatus comprising an external surface and a position changing device for changing the relative position of the surface of the object and the external surface along a predetermined direction intersecting the surface of the object.

第3の態様によれば、排気装置と接続可能な管路を有し、物体の面の一部と対向した状態で前記管路を介して気体を排出することにより、前記物体の前記面の第1部分に接する第1空間に、前記面の前記第1部分とは異なる第2部分に接する第2空間の圧力より圧力が低い真空領域を形成可能な真空形成部材と、前記物体の周囲の少なくとも一部に位置する外部面と、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置とを備える局所真空装置が提供される。 According to the third aspect, the surface of the object has a conduit that can be connected to the exhaust device, and the gas is discharged through the conduit in a state of facing a part of the surface of the object. A vacuum forming member capable of forming a vacuum region having a pressure lower than the pressure of the second space in contact with the second portion different from the first portion of the surface in the first space in contact with the first portion, and a vacuum forming member around the object. Provided is a local vacuum apparatus including an external surface located at least partially and a position changing device for changing a relative position between the surface of the object and the external surface along a predetermined direction intersecting the surface of the object. To.

第4の態様によれば、排気装置と接続可能な管路を有し、物体の面と前記管路の端部とが対向した状態で、前記物体の前記面に接する空間の気体を前記管路を介して排出して、真空領域を形成する真空形成部材と、前記物体の周囲の少なくとも一部に位置する外部面と、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置とを備える局所真空装置が提供される。 According to the fourth aspect, the pipe has a conduit that can be connected to the exhaust device, and the gas in the space in contact with the surface of the object is injected in a state where the surface of the object and the end of the conduit face each other. A vacuum forming member that discharges through a path to form a vacuum region, an external surface located at least a part around the object, and a surface of the object along a predetermined direction intersecting the surface of the object. A local vacuum device is provided that includes a position changing device that changes the position relative to the external surface.

第5の態様によれば、排気装置と接続可能な管路を有し、物体の面に接する空間の気体を前記管路を介して排出して、真空領域を形成する真空形成部材と、前記物体を保持可能な保持面を有する保持装置と、前記保持面の周囲の少なくとも一部に位置する外部面とを備え、前記真空領域の周囲の前記真空領域よりも気圧が高い空間の少なくとも一部の気体は、前記真空形成部材の前記管路を介して排出され、前記外部面は、前記物体の厚みの規格値の範囲に応じて定まる所定量だけ、前記保持面から前記物体の表面へ向かう方向に、前記保持面から突き出ている局所真空装置が提供される。 According to the fifth aspect, a vacuum forming member having a conduit that can be connected to an exhaust device and discharging gas in a space in contact with the surface of an object through the conduit to form a vacuum region, and the vacuum forming member. A holding device having a holding surface capable of holding an object, and an external surface located at least a part around the holding surface, and at least a part of a space surrounding the vacuum region and having a higher pressure than the vacuum region. The gas is discharged through the conduit of the vacuum forming member, and the outer surface faces the surface of the object from the holding surface by a predetermined amount determined according to a range of standard values of the thickness of the object. A local vacuum device is provided that projects in the direction from the holding surface.

第6の態様によれば、物体の面に接する空間の気体を管路を介して排出して、真空領域を形成することと、前記真空領域の周囲の前記真空領域よりも気圧が高い空間の少なくとも一部の気体を、前記管路を介して排出することと、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することとを含む真空領域の形成方法が提供される。 According to the sixth aspect, the gas in the space in contact with the surface of the object is discharged through the conduit to form a vacuum region, and the pressure in the space around the vacuum region is higher than that in the vacuum region. Discharging at least a portion of the gas through the conduit and on an outer surface located on the surface of the object and at least a portion of the perimeter of the object along a predetermined direction intersecting the surface of the object. A method of forming a vacuum region is provided, including changing the relative position.

第7の態様によれば、排気装置と接続される第1端と、物体の面と接する第1空間と接続される第2端とを有する管路を有する真空形成部材を用いて、前記第1空間の気体を前記管路を介して排出して、前記第1空間と接続される第2空間よりも圧力が低い真空領域を前記第1空間に形成することと、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することとを含む真空領域の形成方法が提供される。 According to the seventh aspect, the vacuum forming member having a conduit having a first end connected to the exhaust device and a second end connected to the first space in contact with the surface of the object is used. A vacuum region having a lower pressure than the second space connected to the first space is formed in the first space by discharging the gas in one space through the conduit, and intersects the surface of the object. A method of forming a vacuum region is provided, which comprises changing the relative positions of the surface of the object and an external surface located at least a part around the object along a predetermined direction.

第8の態様によれば、排気装置と接続可能な管路を介して気体を排出することにより、物体の面の第1部分に接する第1空間に、前記面の前記第1部分とは異なる第2部分に接する第2空間の圧力より圧力が低い真空領域を形成することと、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することとを含む真空領域の形成方法が提供される。 According to the eighth aspect, by discharging the gas through the pipeline connectable to the exhaust device, the first space in contact with the first portion of the surface of the object is different from the first portion of the surface. Forming a vacuum region where the pressure is lower than the pressure of the second space in contact with the second portion, and being located at least a part of the surface of the object and the periphery of the object along a predetermined direction intersecting the surface of the object. A method of forming a vacuum region is provided, including changing the relative position of the outer surface.

第9の態様によれば、排気装置と接続可能な管路の端部と物体の面とが対向した状態で、前記物体の前記面に接する空間の気体を前記管路を介して排出して、真空領域を形成することと、前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することとを含む真空領域の形成方法が提供される。 According to the ninth aspect, the gas in the space in contact with the surface of the object is discharged through the pipeline in a state where the end of the pipeline connectable to the exhaust device and the surface of the object face each other. Includes forming a vacuum region and changing the relative position of the surface of the object and an outer surface located at least a portion of the perimeter of the object along a predetermined direction intersecting the surface of the object. A method of forming a vacuum region is provided.

第10の態様によれば、物体の表面の一部を覆い前記物体と接する真空領域を局所的に形成可能な真空形成部材と、前記物体を保持可能な保持面を有する保持装置と、前記保持面の周囲の少なくとも一部に位置する外部面と、前記保持面に保持された前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置とを備える局所真空装置が提供される。 According to the tenth aspect, a vacuum forming member capable of locally forming a vacuum region in contact with the object by covering a part of the surface of the object, a holding device having a holding surface capable of holding the object, and the holding device. A position for changing the relative position between the surface of the object and the external surface along a predetermined direction intersecting the surface of the object held by the holding surface with an external surface located at least a part of the periphery of the surface. A local vacuum device with a changing device is provided.

第11の態様によれば、物体上の空間に前記物体の表面の一部を覆う真空領域を局所的に形成可能な真空形成部材と、前記物体を保持可能な保持面を有する保持装置と、前記保持面の周囲の少なくとも一部に位置する外部面とを備え、前記外部面は、前記物体の厚みの規格値の範囲に応じて定まる所定量だけ、前記保持面から前記物体の表面へ向かう方向に、前記保持面から突き出ている局所真空装置が提供される。 According to the eleventh aspect, a vacuum forming member capable of locally forming a vacuum region covering a part of the surface of the object in a space on the object, and a holding device having a holding surface capable of holding the object. It includes an outer surface located at least a part around the holding surface, and the outer surface faces the surface of the object from the holding surface by a predetermined amount determined according to a range of standard values of the thickness of the object. A local vacuum device is provided that projects in the direction from the holding surface.

第12の態様によれば、保持面が保持する物体の表面の一部を覆い且つ前記物体と接する真空領域を局所的に形成することと、前記保持面に保持された前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記保持面の周囲の少なくとも一部に位置する外部面の相対位置を変更することとを含む真空領域の形成方法が提供される。 According to the twelfth aspect, a vacuum region that covers a part of the surface of the object held by the holding surface and is in contact with the object is locally formed, and intersects the surface of the object held by the holding surface. A method of forming a vacuum region is provided, which comprises changing the relative position of the surface of the object and the outer surface located at least a part around the holding surface along a predetermined direction.

本発明の作用及び他の利得は次に説明する実施するための形態から明らかにされる。 The actions and other gains of the present invention will be apparent from the embodiments described below.

図1は、走査型電子顕微鏡の構造を示す断面図である。FIG. 1 is a cross-sectional view showing the structure of a scanning electron microscope. 図2は、走査型電子顕微鏡が備えるビーム照射装置の構造を示す断面図である。FIG. 2 is a cross-sectional view showing the structure of a beam irradiation device included in a scanning electron microscope. 図3は、走査型電子顕微鏡が備えるビーム照射装置の構造を示す斜視図である。FIG. 3 is a perspective view showing the structure of the beam irradiation device included in the scanning electron microscope. 図4(a)及び図4(b)は、走査型電子顕微鏡が備えるステージの構造を示す断面図であり、図4(c)は、走査型電子顕微鏡が備えるステージの構造を示す平面図である。4 (a) and 4 (b) are cross-sectional views showing the structure of the stage included in the scanning electron microscope, and FIG. 4 (c) is a plan view showing the structure of the stage included in the scanning electron microscope. is there. 図5(a)は、ビーム照射装置が試料との間に形成する真空領域を示す断面図であり、図5(b)は、ビーム照射装置が試料との間に形成する真空領域を示す平面図である。FIG. 5A is a cross-sectional view showing a vacuum region formed by the beam irradiator with the sample, and FIG. 5B is a plane showing the vacuum region formed by the beam irradiator with the sample. It is a figure. 図6(a)は、ビーム照射装置が試料及び待避部材の境界近傍に形成する真空領域を示す断面図であり、図6(b)は、ビーム照射装置が試料及び待避部材の境界近傍に形成する真空領域を示す平面図である。FIG. 6 (a) is a cross-sectional view showing a vacuum region formed by the beam irradiator near the boundary between the sample and the repellent member, and FIG. 6 (b) shows the beam irradiator formed near the boundary between the sample and the retreat member. It is a top view which shows the vacuum region | region. 図7(a)は、ビーム照射装置が待避部材との間に形成する真空領域を示す断面図であり、図7(b)は、ビーム照射装置が待避部材との間に形成する真空領域を示す平面図である。FIG. 7 (a) is a cross-sectional view showing a vacuum region formed by the beam irradiator with the shunt member, and FIG. 7 (b) shows a vacuum region formed by the beam irradiator with the shunt member. It is a plan view which shows. 図8(a)から図8(d)の夫々は、ステージが保持する試料を搬出入する場合に待避部材を用いて真空領域を維持する動作の一工程を示す断面図である。8 (a) to 8 (d) are cross-sectional views showing one step of an operation of maintaining a vacuum region by using a retreat member when the sample held by the stage is carried in and out. 図9(a)から図9(d)の夫々は、ビーム照射装置が新たに真空領域を形成する場合に待避部材を用いて真空領域を維持する動作の一工程を示す断面図である。9 (a) to 9 (d) are cross-sectional views showing one step of an operation of maintaining the vacuum region by using the shunting member when the beam irradiator newly forms the vacuum region. 図10は、第1変形例の走査型電子顕微鏡が備えるステージの構造を示す平面図である。FIG. 10 is a plan view showing the structure of the stage included in the scanning electron microscope of the first modification. 図11(a)から図11(c)の夫々は、第1変形例のステージの待避部材に形成されているマークを示す平面図である。11 (a) to 11 (c) are plan views showing marks formed on the siding member of the stage of the first modification. 図12(a)から図12(d)の夫々は、マークを用いて走査型電子顕微鏡を設定する動作の一工程を示す断面図である。Each of FIGS. 12 (a) to 12 (d) is a cross-sectional view showing one step of an operation of setting a scanning electron microscope using a mark. 図13(a)は、第2変形例のステージの構造を示す断面図であり、図13(b)は、第2変形例のステージの構造を示す平面図である。FIG. 13A is a cross-sectional view showing the structure of the stage of the second modification, and FIG. 13B is a plan view showing the structure of the stage of the second modification. 図14は、待避部材と試料との間の空間に面する真空領域を示す断面図である。FIG. 14 is a cross-sectional view showing a vacuum region facing the space between the shunting member and the sample. 図15は、第2変形例のステージの構造の他の例を示す断面図である。FIG. 15 is a cross-sectional view showing another example of the structure of the stage of the second modification. 図16は、第2変形例のステージの構造の他の例を示す平面図である。FIG. 16 is a plan view showing another example of the structure of the stage of the second modification. 図17(a)は、第3変形例においてステージに保持される試料を示す断面図であり、図17(b)は、第3変形例においてステージに保持される試料を示す平面図である。FIG. 17A is a cross-sectional view showing a sample held on the stage in the third modification, and FIG. 17B is a plan view showing the sample held on the stage in the third modification. 図18は、第4変形例のビーム照射装置の構造を示す断面図である。FIG. 18 is a cross-sectional view showing the structure of the beam irradiation device of the fourth modification. 図19は、第4変形例のビーム照射装置の構造を示す断面図である。FIG. 19 is a cross-sectional view showing the structure of the beam irradiation device of the fourth modification. 図20は、第5変形例のビーム照射装置の構造を示す断面図である。FIG. 20 is a cross-sectional view showing the structure of the beam irradiation device of the fifth modification. 図21は、第6変形例における走査型電子顕微鏡が備えるステージの構造を示す断面図である。FIG. 21 is a cross-sectional view showing the structure of the stage included in the scanning electron microscope in the sixth modification. 図22は、第6変形例におけるステージとビーム照射装置との位置関係を示す断面図である。FIG. 22 is a cross-sectional view showing the positional relationship between the stage and the beam irradiation device in the sixth modification. 図23(a)及び図23(b)の夫々は、第7変形例における走査型電子顕微鏡が備えるステージの構造を示す断面図である。23 (a) and 23 (b) are cross-sectional views showing the structure of the stage included in the scanning electron microscope in the seventh modification. 図24は、第8変形例における走査型電子顕微鏡が備えるステージの構造を示す断面図である。FIG. 24 is a cross-sectional view showing the structure of the stage included in the scanning electron microscope in the eighth modification. 図25は、第8変型例における走査型電子顕微鏡が備えるステージの動作の一工程を示す断面図である。FIG. 25 is a cross-sectional view showing one step of the operation of the stage included in the scanning electron microscope in the eighth modified example. 図26は、第8変型例における走査型電子顕微鏡が備えるステージの動作の一工程を示す断面図である。FIG. 26 is a cross-sectional view showing one step of the operation of the stage included in the scanning electron microscope in the eighth modified example. 図27は、第9変形例における真空領域を維持するための動作の流れを示すフローチャートである。FIG. 27 is a flowchart showing a flow of operation for maintaining the vacuum region in the ninth modification. 図28は、第9変形例における移動元面及び移動先面の夫々のZ位置を特定するための動作の流れを示すフローチャートである。FIG. 28 is a flowchart showing a flow of operation for specifying the Z positions of the movement source surface and the movement destination surface in the ninth modification. 図29(a)は、ビーム照射装置の状態が非待避状態から待避状態へと切り替わる場合において、移動元面である試料の表面が、移動先面である外周部材の上面よりも低い例を示す断面図であり、図29(b)は、ビーム照射装置の状態が非待避状態から待避状態へと切り替わる場合において、移動元面である試料の表面が、移動先面である外周部材の上面よりも高い例を示す断面図であり、図29(c)は、ビーム照射装置の状態が非待避状態から待避状態へと切り替わる場合において、ビーム照射装置と移動元面である試料の表面との間の距離を大きくする動作を示す断面図である。FIG. 29A shows an example in which the surface of the sample, which is the moving source surface, is lower than the upper surface of the outer peripheral member, which is the moving destination surface, when the state of the beam irradiating device is switched from the non-reserved state to the reserved state. It is a cross-sectional view, and FIG. 29 (b) shows that when the state of the beam irradiator is switched from the non-retracted state to the retreated state, the surface of the sample which is the moving source surface is from the upper surface of the outer peripheral member which is the moving destination surface. FIG. 29 (c) is a cross-sectional view showing a high example, in which FIG. 29 (c) shows the space between the beam irradiator and the surface of the sample which is the moving source surface when the state of the beam irradiator is switched from the non-retracted state to the reserved state. It is sectional drawing which shows the operation which increases the distance of. 図30(a)は、ビーム照射装置の状態が待避状態から非待避状態へと切り替わる場合において、移動元面である外周部材の上面が、移動先面である試料の表面よりも低い例を示す断面図であり、図30(b)は、ビーム照射装置の状態が待避状態から非待避状態へと切り替わる場合において、移動元面である外周部材の上面が、移動先面である試料の表面よりも高い例を示す断面図であり、図30(c)は、ビーム照射装置の状態が待避状態から非待避状態へと切り替わる場合において、ビーム照射装置と移動元面である外周部材の上面との間の距離を大きくする動作を示す断面図である。FIG. 30A shows an example in which the upper surface of the outer peripheral member, which is the moving source surface, is lower than the surface of the sample, which is the moving destination surface, when the state of the beam irradiating device is switched from the retracted state to the non-reserved state. It is a cross-sectional view, and FIG. 30B shows that when the state of the beam irradiator is switched from the retracted state to the non-retracted state, the upper surface of the outer peripheral member which is the moving source surface is from the surface of the sample which is the moving destination surface. 30 (c) is a cross-sectional view showing a high example, in which FIG. It is sectional drawing which shows the operation which increases the distance between. 図31(a)は、移動元面である試料の表面が移動先面である外周部材の上面よりも低い状況下でビーム照射装置の状態が非待避状態から待避状態へと切り替わる場合において外周部材を移動させる動作を示す断面図であり、図31(b)は、移動元面である試料の表面が移動先面である外周部材の上面よりも高い状況下でビーム照射装置の状態が非待避状態から待避状態へと切り替わる場合において外周部材を移動させる動作を示す断面図である。FIG. 31 (a) shows the outer peripheral member when the state of the beam irradiator is switched from the non-retracted state to the reserved state when the surface of the sample which is the moving source surface is lower than the upper surface of the outer peripheral member which is the moving destination surface. 31 (b) is a cross-sectional view showing an operation of moving the beam irradiation device, in which the state of the beam irradiator is non-evacuated under the condition that the surface of the sample which is the movement source surface is higher than the upper surface of the outer peripheral member which is the movement destination surface. It is sectional drawing which shows the operation which moves the outer peripheral member at the time of switching from a state to a shunt state. 図32(a)は、移動元面である外周部材の上面が移動先面である試料の表面よりも高い状況下でビーム照射装置の状態が待避状態から非待避状態へと切り替わる場合において外周部材を移動させる動作を示す断面図であり、図32(b)は、移動元面である外周部材の上面が移動先面である試料の表面よりも低い状況下でビーム照射装置の状態が待避状態から非待避状態へと切り替わる場合において外周部材を移動させる動作を示す断面図である。FIG. 32A shows the outer peripheral member when the state of the beam irradiator is switched from the retracted state to the non-retracted state when the upper surface of the outer peripheral member which is the moving source surface is higher than the surface of the sample which is the moving destination surface. 32 (b) is a cross-sectional view showing an operation of moving the beam irradiating device, in which the upper surface of the outer peripheral member which is the moving source surface is lower than the surface of the sample which is the moving destination surface. It is sectional drawing which shows the operation which moves the outer peripheral member at the time of switching from to a non-shelter state. 図33(a)は、第10変形例の走査型電子顕微鏡が備えるステージの構造を示す斜視図であり、図33(b)は、図33(a)のA−A断面図である。33 (a) is a perspective view showing the structure of the stage included in the scanning electron microscope of the tenth modification, and FIG. 33 (b) is a sectional view taken along the line AA of FIG. 33 (a). 図34(a)から図34(d)の夫々は、第10変形例の走査型電子顕微鏡の動作の一工程を示す断面図である。Each of FIGS. 34 (a) to 34 (d) is a cross-sectional view showing one step of the operation of the scanning electron microscope of the tenth modification. 図35(a)及び図35(b)は、第11変形例の走査型電子顕微鏡が備えるステージの構造を示す図である。35 (a) and 35 (b) are views showing the structure of the stage included in the scanning electron microscope of the eleventh modification. 図36は、第12変形例の走査型電子顕微鏡の構造を示す断面図である。FIG. 36 is a cross-sectional view showing the structure of the scanning electron microscope of the twelfth modification. 図37は、第13変形例の走査型電子顕微鏡の構造を示す断面図である。FIG. 37 is a cross-sectional view showing the structure of the scanning electron microscope of the thirteenth modification. 図38は、第14変形例においてステージが試料を保持する様子を示す断面図である。FIG. 38 is a cross-sectional view showing how the stage holds the sample in the 14th modification. 図39は、第15変形例においてステージが試料を保持する様子を示す断面図である。FIG. 39 is a cross-sectional view showing how the stage holds the sample in the fifteenth modification. 図40は、第16変形例においてステージが試料を保持する様子を示す断面図である。FIG. 40 is a cross-sectional view showing how the stage holds the sample in the 16th modification. 図41(a)及び図41(b)の夫々は、走査型電子顕微鏡が備えるステージの構造の他の例を示す平面図である。Each of FIGS. 41 (a) and 41 (b) is a plan view showing another example of the structure of the stage included in the scanning electron microscope.

以下、図面を参照しながら、局所真空装置、荷電粒子装置、真空領域の形成方法及び荷電粒子の照射方法の実施形態について説明する。以下では、局所的な真空領域VSPを介して電子ビームEBを試料Wに照射して当該試料Wに関する情報を取得する(例えば、試料Wの状態を計測する)走査型電子顕微鏡(Scanning Electron Microscope)SEMを用いて、局所真空装置、荷電粒子装置、真空領域の形成方法及び荷電粒子の照射方法の実施形態を説明する。試料Wは、例えば、半導体基板である。但し、試料Wは、半導体基板とは異なる物体であってもよい。試料Wは、例えば、直径が約300ミリメートルであり、厚さが約750マイクロメートルから800マイクロメートルとなる円板状の基板である。但し、試料Wは、任意のサイズを有する任意の形状の基板(或いは、物体)であってもよい。例えば、試料Wは、液晶表示素子等のディスプレイのための角形基板やフォトマスクのための角形基板であってもよい。 Hereinafter, embodiments of a local vacuum device, a charged particle device, a method for forming a vacuum region, and a method for irradiating charged particles will be described with reference to the drawings. In the following, a scanning electron microscope (Scanning Electron Microscope) that irradiates a sample W with an electron beam EB via a local vacuum region VSP to acquire information about the sample W (for example, measures the state of the sample W). An embodiment of a local vacuum device, a charged particle device, a method of forming a vacuum region, and a method of irradiating charged particles will be described using an SEM. Sample W is, for example, a semiconductor substrate. However, the sample W may be an object different from the semiconductor substrate. Sample W is, for example, a disk-shaped substrate having a diameter of about 300 millimeters and a thickness of about 750 micrometers to 800 micrometers. However, the sample W may be a substrate (or an object) having an arbitrary size and an arbitrary shape. For example, the sample W may be a square substrate for a display such as a liquid crystal display element or a square substrate for a photomask.

また、以下の説明では、互いに直交するX軸、Y軸及びZ軸から定義されるXYZ直交座標系を用いて、走査型電子顕微鏡SEMを構成する各種構成要素の位置関係について説明する。尚、以下の説明では、説明の便宜上、X軸方向及びY軸方向のそれぞれが水平方向(つまり、水平面内の所定方向)であり、Z軸方向が鉛直方向(つまり、水平面に直交する方向であり、実質的には上下方向)であるものとする。更に、+Z側が上方(つまり、上側)に相当し、−Z側が下方(つまり、下側)に相当するものとする。尚、Z軸方向は、走査型電子顕微鏡SEMが備える後述のビーム光学系11の光軸AXに平行な方向でもある。また、X軸、Y軸及びZ軸周りの回転方向(言い換えれば、傾斜方向)を、それぞれ、θX方向、θY方向及びθZ方向と称する。 Further, in the following description, the positional relationship of various components constituting the scanning electron microscope SEM will be described using the XYZ Cartesian coordinate system defined from the X-axis, the Y-axis, and the Z-axis which are orthogonal to each other. In the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in the horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). Yes, in effect, in the vertical direction). Further, it is assumed that the + Z side corresponds to the upper side (that is, the upper side) and the −Z side corresponds to the lower side (that is, the lower side). The Z-axis direction is also a direction parallel to the optical axis AX of the beam optical system 11 described later included in the scanning electron microscope SEM. Further, the rotation directions (in other words, the inclination direction) around the X-axis, the Y-axis, and the Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

(1)走査型電子顕微鏡SEMの構造
はじめに、図1から図4を参照しながら、走査型電子顕微鏡SEMの構造について説明する。図1は、走査型電子顕微鏡SEMの構造を示す断面図である。図2は、走査型電子顕微鏡SEMが備えるビーム照射装置1の構造を示す断面図である。図3は、走査型電子顕微鏡SEMが備えるビーム照射装置1の構造を示す斜視図である。図4(a)は、走査型電子顕微鏡SEMが備えるステージ22の構造を示す断面図であり、図4(b)は、走査型電子顕微鏡SEMが備えるステージ22の構造を示す平面図である。尚、図面の簡略化のために、図1は、走査型電子顕微鏡SEMの一部の構成要素については、その断面を示していない。
(1) Structure of Scanning Electron Microscope SEM First, the structure of the scanning electron microscope SEM will be described with reference to FIGS. 1 to 4. FIG. 1 is a cross-sectional view showing the structure of a scanning electron microscope SEM. FIG. 2 is a cross-sectional view showing the structure of the beam irradiation device 1 included in the scanning electron microscope SEM. FIG. 3 is a perspective view showing the structure of the beam irradiation device 1 included in the scanning electron microscope SEM. FIG. 4A is a cross-sectional view showing the structure of the stage 22 included in the scanning electron microscope SEM, and FIG. 4B is a plan view showing the structure of the stage 22 included in the scanning electron microscope SEM. For the sake of simplification of the drawings, FIG. 1 does not show a cross section of some components of the scanning electron microscope SEM.

図1に示すように、走査型電子顕微鏡SEMは、ビーム照射装置1と、ステージ装置2と、支持フレーム3と、制御装置4と、ポンプ系5とを備える。更に、ポンプ系5は、真空ポンプ51と、真空ポンプ52とを備える。 As shown in FIG. 1, the scanning electron microscope SEM includes a beam irradiation device 1, a stage device 2, a support frame 3, a control device 4, and a pump system 5. Further, the pump system 5 includes a vacuum pump 51 and a vacuum pump 52.

ビーム照射装置1は、ビーム照射装置1から下方に向けて電子ビームEBを射出可能である。ビーム照射装置1は、ビーム照射装置1の下方に配置されるステージ装置2が保持する試料Wに対して電子ビームEBを照射可能である。試料Wに対して電子ビームEBを照射するために、ビーム照射装置1は、図2及び図3に示すように、ビーム光学系11と、差動排気系12とを備えている。 The beam irradiation device 1 can emit an electron beam EB downward from the beam irradiation device 1. The beam irradiating device 1 can irradiate the sample W held by the stage device 2 arranged below the beam irradiating device 1 with the electron beam EB. In order to irradiate the sample W with the electron beam EB, the beam irradiating device 1 includes a beam optical system 11 and a differential exhaust system 12 as shown in FIGS. 2 and 3.

図2に示すように、ビーム光学系11は、筐体111を備えている。筐体111は、ビーム光学系11の光軸AXに沿って延びる(つまり、Z軸に沿って延びる)ビーム通過空間SPb1が内部に確保されている円筒状の部材である。ビーム通過空間SPb1は、電子ビームEBが通過する空間として用いられる。ビーム通過空間SPb1を通過する電子ビームEBが筐体111を通過する(つまり、筐体111の外部へ漏れ出す)ことを防止するために及び/又はビーム照射装置1の外部の磁場(いわゆる、外乱磁場)がビーム通過空間SPb1を通過する電子ビームEBに影響を与えることを防止するために、筐体111は、高透磁率材料から構成されていてもよい。高透磁率材料の一例として、パーマロイ及びケイ素鋼の少なくとも一方があげられる。これらの高透磁率材料の比透磁率は1000以上である。 As shown in FIG. 2, the beam optical system 11 includes a housing 111. The housing 111 is a cylindrical member in which a beam passing space SPb1 extending along the optical axis AX of the beam optical system 11 (that is, extending along the Z axis) is secured inside. The beam passing space SPb1 is used as a space through which the electron beam EB passes. To prevent the electron beam EB passing through the beam passing space SPb1 from passing through the housing 111 (that is, leaking to the outside of the housing 111) and / or the magnetic field outside the beam irradiation device 1 (so-called disturbance). The housing 111 may be made of a high magnetic permeability material in order to prevent the magnetic field) from affecting the electron beam EB passing through the beam passing space SPb1. Examples of high magnetic permeability materials include at least one of permalloy and silicon steel. The relative magnetic permeability of these high magnetic permeability materials is 1000 or more.

ビーム通過空間SPb1は、電子ビームEBが照射される期間中は、真空空間となる。具体的には、ビーム通過空間SPb1には、ビーム通過空間SPb1に連通するように(つまり、つながるように)筐体111(更には、後述する側壁部材122)に形成される配管(つまり、管路)117を介して真空ポンプ51が連結されている。真空ポンプ51は、ビーム通過空間SPb1が真空空間となるように、ビーム通過空間SPb1を排気して大気圧よりも減圧する。このため、本実施形態における真空空間は、大気圧よりも圧力が低い空間を意味していてもよい。特に、真空空間は、電子ビームEBの試料Wへの適切な照射を妨げないほどにしか気体分子が存在しない空間(言い換えれば、電子ビームEBの試料Wへの適切な照射を妨げない真空度となる空間)を意味していてもよい。ビーム通過空間SPb1は、筐体111の下面に形成されたビーム射出口(つまり、開口)119を介して、筐体111の外部の空間(より具体的には、後述する差動排気系12のビーム通過空間SPb2)に連通している。尚、ビーム通過空間SPb1は、電子ビームEBが照射されない期間中に真空空間となってもよい。 The beam passing space SPb1 becomes a vacuum space during the period in which the electron beam EB is irradiated. Specifically, the beam passing space SPb1 has a pipe (that is, a pipe) formed in the housing 111 (furthermore, the side wall member 122 described later) so as to communicate with (that is, connect to) the beam passing space SPb1. The vacuum pump 51 is connected via a road) 117. The vacuum pump 51 exhausts the beam passing space SPb1 so that the beam passing space SPb1 becomes a vacuum space and reduces the pressure below the atmospheric pressure. Therefore, the vacuum space in the present embodiment may mean a space whose pressure is lower than the atmospheric pressure. In particular, the vacuum space is a space in which gas molecules exist only to the extent that the electron beam EB does not interfere with the appropriate irradiation of the sample W (in other words, the degree of vacuum does not interfere with the appropriate irradiation of the electron beam EB with the sample W). Space) may be meant. The beam passing space SPb1 is a space outside the housing 111 (more specifically, a differential exhaust system 12 described later) via a beam ejection port (that is, an opening) 119 formed on the lower surface of the housing 111. It communicates with the beam passage space SPb2). The beam passing space SPb1 may be a vacuum space during the period when the electron beam EB is not irradiated.

ビーム光学系11は更に、電子銃113と、電磁レンズ114と、対物レンズ115と、電子検出器116とを備える。電子銃113は、−Z側に向けて電子ビームEBを放出する。尚、電子銃113の代わりに光が照射されたとき電子を放出する光電変換面を用いてもよい。電磁レンズ114は、電子銃113が放出した電子ビームEBを制御する。例えば、電磁レンズ114は、電子ビームEBが所定の光学面(例えば、電子ビームEBの光路に交差する仮想面)上に形成する像の回転量(つまり、θZ方向の位置)、当該像の倍率、及び、結像位置に対応する焦点位置のいずれか一つを制御してもよい。対物レンズ115は、電子ビームEBを所定の縮小倍率で試料Wの表面(具体的には、電子ビームEBが照射される面であり、図1及び図2に示す例では+Z側を向いている面であって且つXY平面に沿った面)WSuに結像させる。電子検出器116は、pn接合又はpin接合の半導体を使用した半導体型電子検出装置(つまり、半導体検出装置)である。電子検出器116は、試料Wに対する電子ビームEBの照射によって生じた電子(例えば、反射電子及び散乱電子の少なくとも一方。散乱電子は2次電子を含む)を検出する。制御装置4は、電子検出器116の検出結果に基づいて、試料Wの状態を特定する。例えば、制御装置4は、電子検出器116の検出結果に基づいて、試料Wの表面WSuの3次元形状を特定する。尚、本実施形態では、試料Wの表面WSuは理想的には平面であり、制御装置4は、その表面WSuに形成されている微細な凹凸パターンの形状を含む表面WSuの3次元形状を特定するものとする。尚、試料Wの表面WSuは平面でなくてもよい。また、電子検出器116は、後述する差動排気系12に設けられてもよい。 The beam optical system 11 further includes an electron gun 113, an electromagnetic lens 114, an objective lens 115, and an electron detector 116. The electron gun 113 emits an electron beam EB toward the −Z side. Instead of the electron gun 113, a photoelectric conversion surface that emits electrons when irradiated with light may be used. The electromagnetic lens 114 controls the electron beam EB emitted by the electron gun 113. For example, the electromagnetic lens 114 has an image rotation amount (that is, a position in the θZ direction) formed by the electron beam EB on a predetermined optical surface (for example, a virtual surface intersecting the optical path of the electron beam EB), and a magnification of the image. , And any one of the focal positions corresponding to the imaging position may be controlled. The objective lens 115 is a surface on which the electron beam EB is irradiated with the electron beam EB at a predetermined reduction magnification (specifically, the surface on which the electron beam EB is irradiated, and faces the + Z side in the examples shown in FIGS. 1 and 2. A plane and a plane along the XY plane) is imaged on WSu. The electron detector 116 is a semiconductor type electron detector (that is, a semiconductor detector) using a pn junction or pin junction semiconductor. The electron detector 116 detects an electron (for example, at least one of a reflected electron and a scattered electron. The scattered electron includes a secondary electron) generated by irradiating the sample W with the electron beam EB. The control device 4 identifies the state of the sample W based on the detection result of the electron detector 116. For example, the control device 4 identifies the three-dimensional shape of the surface WSu of the sample W based on the detection result of the electron detector 116. In the present embodiment, the surface WSu of the sample W is ideally flat, and the control device 4 specifies the three-dimensional shape of the surface WSu including the shape of the fine uneven pattern formed on the surface WSu. It shall be. The surface WSu of the sample W does not have to be flat. Further, the electronic detector 116 may be provided in the differential exhaust system 12 described later.

差動排気系12は、真空形成部材121と、側壁部材122とを備える。側壁部材122は、真空形成部材121から上方に延びる筒状の部材である。側壁部材122は、内部に筐体111(つまり、ビーム光学系11)を収容する。側壁部材122は、内部にビーム光学系11を収容した状態でビーム光学系11と一体化されるが、ビーム光学系11から分離可能であってもよい。真空形成部材121は、ビーム光学系11の下方(つまり、−Z側)に配置される。真空形成部材121は、ビーム光学系11の下方において、ビーム光学系11に接続される(つまり、連結)される。真空形成部材121は、ビーム光学系11に接続されてビーム光学系11と一体化されるが、分離可能であってもよい。真空形成部材121の内部には、ビーム通過空間SPb2が形成されている。尚、図3は、真空形成部材121が、ビーム通過空間SPb2の一部であるビーム通過空間SPb2−1が形成された真空形成部材121−1、ビーム通過空間SPb2の一部であるビーム通過空間SPb2−2が形成された真空形成部材121−2、及び、ビーム通過空間SPb2の一部であるビーム通過空間SPb2−3が形成された真空形成部材121−3が、ビーム通過空間SPb2−1からSPb2−3が連通するように積層された構造を有する例を示しているが、真空形成部材121の構造がこの例に限定されることはない。ビーム通過空間SPb2は、真空形成部材121の上面(図3に示す例では、真空形成部材121−3の+Z側の面)に形成されたビーム射出口(つまり、開口)1231を介して、ビーム光学系11のビーム通過空間SPb1に連通している。ビーム通過空間SPb2は、ビーム通過空間SPb1と共に、真空ポンプ51によって排気される(つまり、減圧される)。従って、ビーム通過空間SPb2は、電子ビームEBが照射される期間中は、真空空間となる。ビーム通過空間SPb2は、ビーム通過空間SPb1からの電子ビームEBが通過する空間として用いられる。ビーム通過空間SPb1及びSPb2の少なくとも一方を通過する電子ビームEBが真空形成部材121及び側壁部材122の少なくとも一方を通過する(つまり、差動排気系12の外部へ漏れ出す)ことを防止するために及び/又はビーム照射装置1の外部の磁場(いわゆる、外乱磁場)がビーム通過空間SPb1及びSPb2の少なくとも一方を通過する電子ビームEBに影響を与えることを防止するために、真空形成部材121及び側壁部材122の少なくとも一方は、高透磁率材料から構成されていてもよい。尚、ビーム通過空間SPb2は、電子ビームEBが照射されない期間中に真空空間となってもよい。 The differential exhaust system 12 includes a vacuum forming member 121 and a side wall member 122. The side wall member 122 is a tubular member extending upward from the vacuum forming member 121. The side wall member 122 houses the housing 111 (that is, the beam optical system 11) inside. The side wall member 122 is integrated with the beam optical system 11 with the beam optical system 11 housed therein, but may be separable from the beam optical system 11. The vacuum forming member 121 is arranged below the beam optical system 11 (that is, on the −Z side). The vacuum forming member 121 is connected (that is, connected) to the beam optical system 11 below the beam optical system 11. The vacuum forming member 121 is connected to the beam optical system 11 and integrated with the beam optical system 11, but may be separable. A beam passing space SPb2 is formed inside the vacuum forming member 121. In FIG. 3, the vacuum forming member 121 is a vacuum forming member 121-1 in which the beam passing space SPb2-1 which is a part of the beam passing space SPb2 is formed, and the beam passing space which is a part of the beam passing space SPb2. The vacuum forming member 121-2 on which SPb2-2 is formed and the vacuum forming member 121-3 on which the beam passing space SPb2-3, which is a part of the beam passing space SPb2, are formed are separated from the beam passing space SPb2-1. Although an example having a structure in which SPb2-3 are laminated so as to communicate with each other is shown, the structure of the vacuum forming member 121 is not limited to this example. The beam passage space SPb2 passes through a beam ejection port (that is, an opening) 1231 formed on the upper surface of the vacuum forming member 121 (in the example shown in FIG. 3, the surface on the + Z side of the vacuum forming member 121-3). It communicates with the beam passing space SPb1 of the optical system 11. The beam passing space SPb2 is exhausted (that is, depressurized) by the vacuum pump 51 together with the beam passing space SPb1. Therefore, the beam passing space SPb2 becomes a vacuum space during the period in which the electron beam EB is irradiated. The beam passing space SPb2 is used as a space through which the electron beam EB from the beam passing space SPb1 passes. To prevent the electron beam EB passing through at least one of the beam passing spaces SPb1 and SPb2 from passing through at least one of the vacuum forming member 121 and the side wall member 122 (that is, leaking to the outside of the differential exhaust system 12). And / or the vacuum forming member 121 and the side wall in order to prevent an external magnetic field (so-called disturbance magnetic field) of the beam irradiation device 1 from affecting the electron beam EB passing through at least one of the beam passing spaces SPb1 and SPb2. At least one of the members 122 may be made of a high magnetic permeability material. The beam passing space SPb2 may be a vacuum space during the period when the electron beam EB is not irradiated.

真空形成部材121は更に、試料Wの表面WSuに対向可能な射出面121LSを備える。図3に示す例では、真空形成部材121−1が、射出面121LSを備えている。ビーム照射装置1は、射出面121LSと表面WSuとの間の間隔D(つまり、Z軸方向におけるビーム照射装置1と試料Wとの間の間隔Dが所望間隔D_target(例えば、10μm以下且つ1μm以上)となるように、後述する間隔調整系14によって、試料Wに対して位置合わせされる。尚、間隔Dは、Z軸方向における射出面121LSと表面WSuの間の距離及びZ軸方向における射出面121LSの位置と表面WSuの位置との差の夫々と等価である。間隔Dは、射出面121LSと表面WSuとのZ軸方向における距離と称してもよい。射出面121LSには、ビーム射出口(つまり、開口)1232が形成されている。尚、真空形成部材121は、試料Wの表面WSuに対向可能な射出面121LSを備えていなくてもよい。図2に示すように、ビーム通過空間SPb2は、ビーム射出口1232を介して、真空形成部材121の外部のビーム通過空間SPb3に連通している。つまり、ビーム通過空間SPb1は、ビーム通過空間SPb2を介してビーム通過空間SPb3に連通している。但し、ビーム通過空間SPb2が確保されていなくてもよい。つまり、ビーム通過空間SPb1は、ビーム通過空間SPb2を介することなくビーム通過空間SPb3に直接連通していてもよい。ビーム通過空間SPb3は、試料W上の局所的な空間である。ビーム通過空間SPb3は、ビーム照射装置1と試料Wとの間(具体的には、射出面121LSと表面WSuとの間)において電子ビームEBが通過する局所的な空間である。ビーム通過空間SPb3は、試料Wの表面WSuのうち電子ビームEBが照射される照射領域に少なくとも面する(或いは、覆う又は接する)空間である。ビーム通過空間SPb3は、ビーム通過空間SPb1及びSPb2と共に、真空ポンプ51によって排気される(つまり、減圧される)。この場合、ビーム通過空間SPb1及びSPb2のそれぞれは、ビーム通過空間SPb3を排気するためにビーム通過空間SPb3と真空ポンプ51とを接続する排気通路(つまり、管路)としても機能可能である。従って、ビーム通過空間SPb3は、電子ビームEBが照射される期間中は、真空空間となる。このため、電子銃113から放出された電子ビームEBは、いずれも真空空間であるビーム通過空間SPb1からSPb3の少なくとも一部を介して試料Wに照射される。尚、ビーム通過空間SPb3は、電子ビームEBが照射されない期間中に真空空間となってもよい。 The vacuum forming member 121 further includes an injection surface 121LS capable of facing the surface WSu of the sample W. In the example shown in FIG. 3, the vacuum forming member 121-1 includes an injection surface 121LS. In the beam irradiation device 1, the distance D between the injection surface 121LS and the surface WSu (that is, the distance D between the beam irradiation device 1 and the sample W in the Z-axis direction is a desired distance D_taget (for example, 10 μm or less and 1 μm or more). ) Is aligned with respect to the sample W by the interval adjusting system 14 described later. The interval D is the distance between the injection surface 121LS and the surface WSu in the Z-axis direction and the injection in the Z-axis direction. Each of the differences between the position of the surface 121LS and the position of the surface WSu is equivalent. The interval D may be referred to as the distance between the injection surface 121LS and the surface WSu in the Z-axis direction. The beam emission on the injection surface 121LS. An outlet (that is, an opening) 1232 is formed. The vacuum forming member 121 does not have to have an injection surface 121LS that can face the surface WSu of the sample W. As shown in FIG. 2, the beam passes through. The space SPb2 communicates with the beam passing space SPb3 outside the vacuum forming member 121 via the beam ejection port 1232. That is, the beam passing space SPb1 communicates with the beam passing space SPb3 via the beam passing space SPb2. However, the beam passing space SPb2 may not be secured. That is, the beam passing space SPb1 may directly communicate with the beam passing space SPb3 without passing through the beam passing space SPb2. The space SPb3 is a local space on the sample W. The beam passing space SPb3 is an electron beam between the beam irradiation device 1 and the sample W (specifically, between the injection surface 121LS and the surface WSu). A local space through which the EB passes. The beam passing space SPb3 is a space in the surface WSu of the sample W that at least faces (or covers or touches) the irradiation region irradiated with the electron beam EB. The space SPb3 is exhausted (that is, depressurized) by the vacuum pump 51 together with the beam passing spaces SPb1 and SPb2. In this case, each of the beam passing spaces SPb1 and SPb2 has a beam to exhaust the beam passing space SPb3. It can also function as an exhaust passage (that is, a conduit) connecting the passage space SPb3 and the vacuum pump 51. Therefore, the beam passage space SPb3 becomes a vacuum space during the period when the electron beam EB is irradiated. Therefore, the electron beam EB emitted from the electron gun 113 irradiates the sample W through at least a part of the beam passing spaces SPb1 to SPb3, which are vacuum spaces. The beam passing space SPb3 may be a vacuum space during the period when the electron beam EB is not irradiated.

ビーム通過空間SPb3は、ビーム通過空間SPb1及びSPb2よりも真空ポンプ51から離れた位置にある。ビーム通過空間SPb2は、ビーム通過空間SPb1よりも真空ポンプ51から離れた位置にある。このため、ビーム通過空間SPb3の真空度は、ビーム通過空間SPb1及びSPb2の真空度よりも低くなる可能性があり、且つ、ビーム通過空間SPb2の真空度は、ビーム通過空間SPb1の真空度よりも低くなる可能性がある。尚、本実施形態における「空間Aの真空度よりも空間Bの真空度が低い」状態は、「「空間Aの圧力よりも空間Bの圧力が高い」ことを意味する。この場合、真空ポンプ51は、真空度が最も低くなる可能性があるビーム通過空間SPb3の真空度を、電子ビームEBの試料Wへの適切な照射を妨げない真空度にすることができる程度の排気能力を有する。一例として、真空ポンプ51は、ビーム通過空間SPb3の圧力(つまり、気圧)を1×10−3パスカル以下に維持する(例えば、概ね1×10−3パスカルから1×10−4パスカルのオーダーで維持する)ことができる程度の排気能力を有していてもよい。このような真空ポンプ51として、例えば、主ポンプとして用いられるターボ分子ポンプ(或いは、拡散ポンプ、クライオポンプ及びスパッタイオンポンプの少なくとも一つを含む他の種類の高真空用ポンプ)と補助ポンプとして用いられるドライポンプ(或いは、他の種類の低真空用ポンプ)とが組み合わせられた真空ポンプが用いられてもよい。尚、真空ポンプ51は、ビーム通過空間SPb3の圧力(つまり、気圧)を1×10−3パスカル以下に維持することができる程度の排気速度[m/s]であってもよい。 The beam passing space SPb3 is located at a position farther from the vacuum pump 51 than the beam passing spaces SPb1 and SPb2. The beam passing space SPb2 is located at a position farther from the vacuum pump 51 than the beam passing space SPb1. Therefore, the degree of vacuum of the beam passing space SPb3 may be lower than the degree of vacuum of the beam passing spaces SPb1 and SPb2, and the degree of vacuum of the beam passing space SPb2 is higher than the degree of vacuum of the beam passing space SPb1. It can be low. The state of "the degree of vacuum in space B is lower than the degree of vacuum in space A" in the present embodiment means "the pressure in space B is higher than the pressure in space A". In this case, the vacuum pump 51 can set the vacuum degree of the beam passing space SPb3, which may have the lowest vacuum degree, to a vacuum degree that does not interfere with the appropriate irradiation of the electron beam EB to the sample W. Has exhaust capacity. As an example, the vacuum pump 51 maintains the pressure (ie, air pressure) of the beam passage space SPb3 below 1 × 10 -3 pascals (eg, approximately on the order of 1 × 10 -3 pascals to 1 × 10 -4 pascals). It may have an exhaust capacity that can be maintained). Such a vacuum pump 51 is used, for example, as a turbo molecular pump used as a main pump (or another type of high vacuum pump including at least one of a diffusion pump, a cryo pump and a sputter ion pump) and an auxiliary pump. A vacuum pump combined with a dry pump (or another type of low vacuum pump) may be used. The vacuum pump 51 may have an exhaust speed [m 3 / s] capable of maintaining the pressure (that is, atmospheric pressure) of the beam passing space SPb3 at 1 × 10 -3 pascal or less.

但し、ビーム通過空間SPb3は、ビーム通過空間SPb1及びSPb2のように何らかの部材(具体的には、筐体111及び真空形成部材121)によって周囲を取り囲まれた閉鎖空間ではない。つまり、ビーム通過空間SPb3は、何らかの部材によって周囲を取り囲まれていない開放空間である。このため、ビーム通過空間SPb3が真空ポンプ51によって減圧されたとしても、ビーム通過空間SPb3には、ビーム通過空間SPb3の周囲から気体が流入する。その結果、ビーム通過空間SPb3の真空度が低下する可能性がある。そこで、差動排気系12は、ビーム照射装置1と試料Wとの間において差動排気を行うことで、ビーム通過空間SPb3の真空度を維持する。つまり、差動排気系12は、ビーム照射装置1と試料Wとの間において差動排気を行うことで、ビーム照射装置1と試料Wとの間に、周囲と比較して相対的に高い真空度が維持された局所的な真空領域VSPを形成し、局所的な真空領域VSPが局所的なビーム通過空間SPb3を含むようにする。言い換えれば、差動排気系12は、局所的なビーム通過空間SPb3が局所的な真空領域VSPに含まれるように、差動排気を行う。尚、本実施形態での差動排気は、試料Wとビーム照射装置1との間において、一の空間(例えば、ビーム通過空間SPb3)と一の空間とは異なる他の空間との間の気圧差が試料Wとビーム照射装置1との間の間隙の排気抵抗によって維持されるという性質を利用しながらビーム通過空間SPb3を排気することに相当する。ビーム通過空間SPb3が試料Wの表面WSuのうちの少なくとも一部(例えば、電子ビームEBが照射される照射領域)を局所的に覆うことから、真空領域VSPもまた、試料Wの表面WSuのうちの少なくとも一部(例えば、電子ビームEBが照射される照射領域)を局所的に覆う。具体的には、真空形成部材121の射出面121LSには、ビーム射出口1232を取り囲む排気溝(つまり、真空形成部材121を貫通しない開口)124が形成されている。排気溝124には、排気溝124に連通するように真空形成部材121及び側壁部材122に形成される配管(つまり、管路)125を介して真空ポンプ52が連結されている。配管125の第1端(つまり、一方の端部)は、真空ポンプ52に接続され、配管125の第2端(つまり、他方の端部であり、実質的には、排気溝124を形成する部分)は、射出面12LSと試料Wの表面WSuとの間の空間に接する。尚、図3は、差動排気系12が、排気溝124から真空ポンプ52に到達するまでに配管125が集約されていく構造を有する例を示している。具体的には、図3は、排気溝124が形成されている真空形成部材121−1に、環状の排気溝124から真空形成部材121−1を貫通するように上方に延びる環状の流路125−1が形成され、真空形成部材121−2に、流路125−1に連通するN1本(図3に示す例では、4本)の配管125−21及びN1本の配管125−21を集約する環状の集約流路125−22が形成され、真空形成部材121−3に、集約流路125−22に連通するN2(但し、N2<N1)本(図3に示す例では、2本)の配管125−31及びN2本の配管125−31を集約する環状の集約流路125−32が形成され、集約流路125−32に配管125−4が連通し、配管125−4が真空ポンプ52に接続される例を示している。尚、ここでは配管125−31の本数N2を配管125−21の本数N1の半分であり、1本の配管125−31はこれと連通する2本の配管125−21からほぼ等距離に位置している。また、配管125−31の本数N2を配管125−4の本数(図3に示す例では、1本)の半分であり、配管125−4はこれと連通する2本の配管125−31からほぼ等距離に位置している。よって、それぞれの配管125−21を介した排気経路の長さと圧損はほぼ等しく、排気溝124から排気される空気の量は方位に依らず偏らない。但し、配管125の構造がこの例に限定されることはない。真空ポンプ52は、排気溝124を介して、ビーム通過空間SPb3の周囲の空間を排気する。その結果、差動排気系12は、ビーム通過空間SPb3の真空度を適切に維持することができる。尚、排気溝124は1つにつながった環状でなくてもよく、環の一部を複数有する複数の排気溝であってもよい。 However, the beam passing space SPb3 is not a closed space surrounded by some members (specifically, the housing 111 and the vacuum forming member 121) like the beam passing spaces SPb1 and SPb2. That is, the beam passing space SPb3 is an open space that is not surrounded by any member. Therefore, even if the beam passing space SPb3 is depressurized by the vacuum pump 51, gas flows into the beam passing space SPb3 from the periphery of the beam passing space SPb3. As a result, the degree of vacuum in the beam passing space SPb3 may decrease. Therefore, the differential exhaust system 12 maintains the degree of vacuum in the beam passing space SPb3 by performing differential exhaust between the beam irradiation device 1 and the sample W. That is, the differential exhaust system 12 performs differential exhaust between the beam irradiation device 1 and the sample W, so that the vacuum between the beam irradiation device 1 and the sample W is relatively high as compared with the surroundings. A local vacuum region VSP is formed in which the degree is maintained so that the local vacuum region VSP includes the local beam passage space SPb3. In other words, the differential exhaust system 12 performs differential exhaust so that the local beam passage space SPb3 is included in the local vacuum region VSP. In the differential exhaust in the present embodiment, the air pressure between the sample W and the beam irradiator 1 is between one space (for example, the beam passing space SPb3) and another space different from the one space. It corresponds to exhausting the beam passage space SPb3 while utilizing the property that the difference is maintained by the exhaust resistance of the gap between the sample W and the beam irradiation device 1. Since the beam passage space SPb3 locally covers at least a part of the surface WSu of the sample W (for example, the irradiation region where the electron beam EB is irradiated), the vacuum region VSP is also among the surface WSu of the sample W. (For example, the irradiation area where the electron beam EB is irradiated) is locally covered. Specifically, an exhaust groove (that is, an opening that does not penetrate the vacuum forming member 121) 124 that surrounds the beam injection port 1232 is formed on the injection surface 121LS of the vacuum forming member 121. The vacuum pump 52 is connected to the exhaust groove 124 via a pipe (that is, a pipeline) 125 formed in the vacuum forming member 121 and the side wall member 122 so as to communicate with the exhaust groove 124. The first end (ie, one end) of the pipe 125 is connected to the vacuum pump 52 and is the second end (ie, the other end) of the pipe 125, substantially forming the exhaust groove 124. The portion) is in contact with the space between the injection surface 12LS and the surface WSu of the sample W. Note that FIG. 3 shows an example in which the differential exhaust system 12 has a structure in which the pipes 125 are integrated from the exhaust groove 124 to the vacuum pump 52. Specifically, FIG. 3 shows an annular flow path 125 extending upward from the annular exhaust groove 124 to the vacuum forming member 121-1 in which the exhaust groove 124 is formed so as to penetrate the vacuum forming member 121-1. -1 is formed, and N1 pipes 125-21 and N1 pipes 125-21 that communicate with the flow path 125-1 are integrated into the vacuum forming member 121-2 (4 in the example shown in FIG. 3). An annular integrated flow path 125-22 is formed, and the vacuum forming member 121-3 has N2 (however, N2 <N1) lines communicating with the integrated flow path 125-22 (two lines in the example shown in FIG. 3). Pipe 125-31 and N2 pipes 125-31 are formed into an annular centralized flow path 125-32, the centralized flow path 125-32 is communicated with the pipe 125-4, and the pipe 125-4 is a vacuum pump. An example of being connected to 52 is shown. Here, the number N2 of the pipes 125-31 is half the number N1 of the pipes 125-21, and one pipe 125-31 is located approximately equidistant from the two pipes 125-21 communicating with the pipe 125-31. ing. Further, the number N2 of the pipes 125-31 is half the number of the pipes 125-4 (one in the example shown in FIG. 3), and the pipes 125-4 are substantially equal to the two pipes 125-31 communicating with the pipes 125-4. It is located equidistant. Therefore, the length and pressure loss of the exhaust path through the respective pipes 125-21 are substantially equal, and the amount of air exhausted from the exhaust groove 124 is not biased regardless of the orientation. However, the structure of the pipe 125 is not limited to this example. The vacuum pump 52 exhausts the space around the beam passing space SPb3 through the exhaust groove 124. As a result, the differential exhaust system 12 can appropriately maintain the degree of vacuum of the beam passing space SPb3. The exhaust groove 124 does not have to be an annular shape connected to one, and may be a plurality of exhaust grooves having a plurality of a part of the ring.

図2に戻って、真空ポンプ52は、主として、ビーム通過空間SPb3の真空度を相対的に高くするために、ビーム通過空間SPb3の周囲の局所的な空間を排気するために用いられる。このため、真空ポンプ52は、真空ポンプ51が維持する真空度よりも低い真空度を維持することができる程度の排気能力を有していてもよい。つまり、真空ポンプ52の排気能力は、真空ポンプ51の排気能力よりも低くてもよい。例えば、真空ポンプ52は、ドライポンプ(或いは、他の種類の低真空用ポンプ)を含む一方でターボ分子ポンプ(或いは、他の種類の高真空用ポンプ)を含んでいない真空ポンプであってもよい。この場合、真空ポンプ52によって減圧される排気溝124及び配管125内の空間の真空度は、真空ポンプ51によって減圧されるビーム照射空間SPb1からSPb3の真空度よりも低くてもよい。尚、真空ポンプ52は、真空ポンプ51が維持する真空度よりも低い真空度を維持することができる程度の排気速度[m/s]であってもよい。 Returning to FIG. 2, the vacuum pump 52 is mainly used to exhaust the local space around the beam passing space SPb3 in order to make the degree of vacuum of the beam passing space SPb3 relatively high. Therefore, the vacuum pump 52 may have an exhaust capacity capable of maintaining a vacuum degree lower than the vacuum degree maintained by the vacuum pump 51. That is, the exhaust capacity of the vacuum pump 52 may be lower than the exhaust capacity of the vacuum pump 51. For example, the vacuum pump 52 may be a vacuum pump that includes a dry pump (or another type of low vacuum pump) but not a turbo molecular pump (or another type of high vacuum pump). Good. In this case, the degree of vacuum in the space in the exhaust groove 124 and the pipe 125 decompressed by the vacuum pump 52 may be lower than the degree of vacuum in the beam irradiation spaces SPb1 to SPb3 decompressed by the vacuum pump 51. The vacuum pump 52 may have an exhaust speed [m 3 / s] that can maintain a vacuum degree lower than the vacuum degree maintained by the vacuum pump 51.

このようにビーム通過空間SPb3に局所的な真空領域VSPが形成される一方で、試料Wの表面WSuのうちビーム通過空間SPb3に面していない部分(特に、ビーム通過空間SPb3から離れた部分)の少なくとも一部は、真空領域VSPよりも真空度が低い非真空領域に覆われていてもよい。典型的には、試料Wの表面WSuのうちビーム空間SPb3に面していない部分の少なくとも一部は、大気圧環境下にあってもよい。つまり、試料Wの表面WSuのうちビーム通過空間SPb3に面していない部分の少なくとも一部は、大気圧領域に覆われていてもよい。具体的には、差動排気系12は、ビーム通過空間SPb3を含む空間SP1(図2参照)に真空領域VSPを形成する。この空間SP1は、例えば、ビーム射出口1232及び排気溝124の少なくとも一つに接する空間を含む。空間SP1は、試料Wの表面WSuのうちビーム射出口1232及び排気溝124の少なくとも一つの直下に位置する部分に面する(つまり、接する)空間を含む。一方で、空間SP1の周囲の空間SP2(つまり、空間SP1の周囲において空間SP1に接続する(例えば、流体的に接続する)空間SP2であり、図2の参照))には、真空領域VSPが形成されない。つまり、空間SP2は、空間SP1よりも圧力が高い空間となる。この空間SP2は、例えば、ビーム射出口1232及び排気溝124から離れた空間を含む。空間SP2は、例えば、試料Wの表面WSuのうち空間SP1が面する部分とは異なる部分に面する空間を含む。空間SP2は、空間SP1を経由することなくビーム射出口1232及び排気溝124(更には、ビーム通過空間SPb2及び配管125)に接続することができない空間を含む。空間SP2は、空間SP1を経由すればビーム射出口1232及び排気溝124(更には、ビーム通過空間SPb2及び配管125)に接続することができる空間を含む。空間SP2の圧力が空間SP1の圧力よりも高いがゆえに、空間SP2から空間SP1に対して気体が流入する可能性があるが、空間SP2から空間SP1に対して流入する気体は、排気溝124(更には、ビーム射出口1232)を介して、空間SP1から排出される。つまり、空間SP2から空間SP1に対して流入する気体は、配管125(更には、ビーム通過空間SPb2)を介して、空間SP1から排出される。このため、空間SP1に形成される真空領域VSPの真空度が維持される。このため、真空領域VSPが局所的に形成される状態は、試料Wの表面WSu上において真空領域VSPが局所的に形成される状態(つまり、試料Wの表面WSuに沿った方向において真空領域VSPが局所的に形成される状態)を意味していてもよい。 While the local vacuum region VSP is formed in the beam passage space SPb3 in this way, the portion of the surface WSu of the sample W that does not face the beam passage space SPb3 (particularly, the portion away from the beam passage space SPb3). At least a part of the vacuum region may be covered with a non-vacuum region having a lower degree of vacuum than the vacuum region VSP. Typically, at least a part of the surface WSu of the sample W that does not face the beam space SPb3 may be in an atmospheric pressure environment. That is, at least a part of the surface WSu of the sample W that does not face the beam passing space SPb3 may be covered with the atmospheric pressure region. Specifically, the differential exhaust system 12 forms a vacuum region VSP in the space SP1 (see FIG. 2) including the beam passing space SPb3. This space SP1 includes, for example, a space in contact with at least one of the beam injection port 1232 and the exhaust groove 124. The space SP1 includes a space facing (that is, in contact with) a portion of the surface WSu of the sample W located directly below at least one of the beam injection port 1232 and the exhaust groove 124. On the other hand, in the space SP2 around the space SP1 (that is, the space SP2 connected to the space SP1 (for example, fluidly connected) around the space SP1 and see FIG. 2), the vacuum region VSP is provided. Not formed. That is, the space SP2 is a space having a higher pressure than the space SP1. This space SP2 includes, for example, a space away from the beam ejection port 1232 and the exhaust groove 124. The space SP2 includes, for example, a space facing a portion of the surface WSu of the sample W that is different from the portion facing the space SP1. The space SP2 includes a space that cannot be connected to the beam injection port 1232 and the exhaust groove 124 (furthermore, the beam passage space SPb2 and the pipe 125) without passing through the space SP1. The space SP2 includes a space that can be connected to the beam injection port 1232 and the exhaust groove 124 (further, the beam passage space SPb2 and the pipe 125) via the space SP1. Since the pressure in the space SP2 is higher than the pressure in the space SP1, there is a possibility that the gas flows from the space SP2 into the space SP1, but the gas flowing from the space SP2 into the space SP1 is exhaust groove 124 ( Further, it is discharged from the space SP1 via the beam ejection port 1232). That is, the gas flowing from the space SP2 into the space SP1 is discharged from the space SP1 via the pipe 125 (furthermore, the beam passing space SPb2). Therefore, the degree of vacuum of the vacuum region VSP formed in the space SP1 is maintained. Therefore, the state in which the vacuum region VSP is locally formed is the state in which the vacuum region VSP is locally formed on the surface WSu of the sample W (that is, the vacuum region VSP is formed in the direction along the surface WSu of the sample W). May mean a state in which is locally formed).

再び図1において、ステージ装置2は、ビーム照射装置1の下方(つまり、−Z側)に配置される。ステージ装置2は、定盤21と、ステージ22とを備える。定盤21は、床等の支持面SF上に配置される。ステージ22は、定盤21上に配置される。ステージ22と定盤21との間には、定盤21の振動のステージ22への伝達を防止するための不図示の防振装置が設置されている。ステージ22は、試料Wを保持する。試料Wを保持するために、ステージ22は、図4(a)から図4(c)に示すように、保持部材221と、外周部材222とを備えている。 Again, in FIG. 1, the stage device 2 is arranged below the beam irradiation device 1 (that is, on the −Z side). The stage device 2 includes a surface plate 21 and a stage 22. The surface plate 21 is arranged on a support surface SF such as a floor. The stage 22 is arranged on the surface plate 21. A vibration isolator (not shown) is installed between the stage 22 and the surface plate 21 to prevent the vibration of the surface plate 21 from being transmitted to the stage 22. Stage 22 holds the sample W. In order to hold the sample W, the stage 22 includes a holding member 221 and an outer peripheral member 222 as shown in FIGS. 4 (a) to 4 (c).

保持部材221は、XY平面に沿って延びる平板状の(或いは、その他の任意の形状の)部材である。保持部材221は、ビーム照射装置1に対向可能な保持面HSを備える。図4(a)から図4(c)に示す例では、保持面HSは、+Z側(つまり、上方)を向いた面である。XY平面に沿った方向における保持面HSのサイズは、XY平面に沿った方向における試料Wのサイズよりも大きいが、同じであってもよい。図4(a)から図4(c)に示す例では、試料Wが平面視において円形の形状を有しているため、保持面HSは平面視において円形状である。尚、試料Wが平面視において矩形状である場合には、保持面HSは平面視において矩形状であってもよい。図4(a)から図4(c)に示す例では、保持面HSの径は試料Wの径よりも大きい。保持面HSは、試料Wを保持する面である。つまり、保持部材221は、保持面HSで試料Wを保持する。例えば、保持部材221は、保持面HSに形成された排気口を介して試料Wの裏面(つまり、表面WSuとは反対側の面であって、図4(a)から図4(c)に示す例では、−Z側(つまり、下方)を向いた面)を真空吸着することで、試料Wを保持してもよい。この場合、保持部材221は、真空チャックを含んでいてもよい。或いは、例えば、保持部材221は、保持部材221に配置された電極を介して保持面HS上に配置された試料Wを静電吸着することで、試料Wを保持してもよい。この場合、保持部材221は、静電チャックを含んでいてもよい。 The holding member 221 is a flat plate-shaped (or other arbitrary shape) member extending along the XY plane. The holding member 221 includes a holding surface HS that can face the beam irradiation device 1. In the examples shown in FIGS. 4 (a) to 4 (c), the holding surface HS is a surface facing the + Z side (that is, upward). The size of the holding surface HS in the direction along the XY plane is larger than the size of the sample W in the direction along the XY plane, but may be the same. In the examples shown in FIGS. 4A to 4C, since the sample W has a circular shape in a plan view, the holding surface HS has a circular shape in a plan view. When the sample W is rectangular in plan view, the holding surface HS may be rectangular in plan view. In the examples shown in FIGS. 4A to 4C, the diameter of the holding surface HS is larger than the diameter of the sample W. The holding surface HS is a surface that holds the sample W. That is, the holding member 221 holds the sample W on the holding surface HS. For example, the holding member 221 is a surface of the back surface of the sample W (that is, a surface opposite to the front surface WSu, which is a surface opposite to the front surface WSu, and is shown in FIGS. In the example shown, the sample W may be held by vacuum-adsorbing the −Z side (that is, the surface facing downward). In this case, the holding member 221 may include a vacuum chuck. Alternatively, for example, the holding member 221 may hold the sample W by electrostatically adsorbing the sample W arranged on the holding surface HS via the electrode arranged on the holding member 221. In this case, the holding member 221 may include an electrostatic chuck.

外周部材222は、XY平面内において、保持部材221の周囲に配置される。外周部材222は、XY平面内において、保持部材221を取り囲むように配置される。図4(a)から図4(c)に示す例では、試料Wが平面視において円形状であるため、外周部材222の内側の輪郭は円状であってもよい。外周部材222は、保持部材221と一体化されているが、保持部材221とは別個の部材であってもよい。外周部材222は、保持部材221よりも上方(つまり、+Z側)に突き出るように形成される部材である。このため、外周部材222は、実質的には、保持部材221の保持面HSから上方(つまり、+Z側)に突き出る部材であるとも言える。外周部材222の上面(具体的には、保持面HSと同じ側を向いた面であって、図4(a)から図4(c)に示す例では、+Z側の面)OSは、保持部材221の保持面HSよりも上方に位置する。具体的には、外周部材222の上面OSは、保持部材221の保持面HSよりも、試料Wの厚みWhだけ上方に位置する。このため、外周部材222の上面OSは、保持部材221が保持している試料Wの表面WSuと同じ高さに位置する。つまり、外周部材222の上面OSは、保持部材221が保持している試料Wの表面WSuと同一平面内に位置する。このため、ステージ22には、保持部材221と外周部材222とによって囲まれた凹部状の収容空間SPwが形成されている。試料Wは、この収容空間SPwに収容され且つ表面WSuが外周部材222の上面OSと同じ高さにある状態で保持部材221によって保持される。尚、収容空間SPwは平面視において円形状であってもよい。 The outer peripheral member 222 is arranged around the holding member 221 in the XY plane. The outer peripheral member 222 is arranged so as to surround the holding member 221 in the XY plane. In the example shown in FIGS. 4A to 4C, since the sample W has a circular shape in a plan view, the inner contour of the outer peripheral member 222 may be circular. Although the outer peripheral member 222 is integrated with the holding member 221, it may be a member separate from the holding member 221. The outer peripheral member 222 is a member formed so as to protrude upward (that is, + Z side) from the holding member 221. Therefore, it can be said that the outer peripheral member 222 is substantially a member that protrudes upward (that is, + Z side) from the holding surface HS of the holding member 221. The upper surface of the outer peripheral member 222 (specifically, a surface facing the same side as the holding surface HS, and in the example shown in FIGS. 4A to 4C, the surface on the + Z side) OS is held. It is located above the holding surface HS of the member 221. Specifically, the upper surface OS of the outer peripheral member 222 is located above the holding surface HS of the holding member 221 by the thickness Wh of the sample W. Therefore, the upper surface OS of the outer peripheral member 222 is located at the same height as the surface WSu of the sample W held by the holding member 221. That is, the upper surface OS of the outer peripheral member 222 is located in the same plane as the surface WSu of the sample W held by the holding member 221. Therefore, the stage 22 is formed with a recessed storage space SPw surrounded by the holding member 221 and the outer peripheral member 222. The sample W is accommodated in the accommodation space SPw and is held by the holding member 221 in a state where the surface WSu is at the same height as the upper surface OS of the outer peripheral member 222. The accommodation space SPw may have a circular shape in a plan view.

外周部材222は、XY平面に沿った一の方向において保持部材221に隣接する待避部材223を、外周部材222の一部として含む。尚、上述したように外周部材222が保持部材221とは別個の部材である場合には、外周部材222の一部に相当する待避部材223もまた、保持部材221とは別個の部材であってもよい。尚、外周部材222が保持部材221と同じ部材である場合であっても、待避部材223は保持部材221とは別個の部材であってもよい。待避部材223は、XY平面内において保持部材221から離れる方向に広がる。待避部材223のサイズ(具体的には、保持部材221から離れる方向におけるサイズ)は、外周部材222のうち一の方向とは異なる他の方向において保持部材221に隣接する部分のサイズよりも大きくてもよい。つまり、外周部材222は、XY平面内において、保持部材221から見て一の方向に位置する部分(つまり、待避部材223)が、保持部材221から見て一の方向とは異なる他の方向に位置する部分よりも相対的に多く外側に広がる(つまり、保持部材221から離れるように広がる)構造を有していてもよい。図4(a)から図4(c)に示す例では、外周部材222は、Y軸方向に沿って保持部材221に隣接する(特に、保持部材221よりも−Y側において保持部材221に隣接する)待避部材223を含む。従って、待避部材223のY軸に沿ったサイズは、外周部材222のうち+Y側において保持部材221に隣接する部分のY軸に沿ったサイズよりも大きくてもよく、且つ、外周部材222のうち+X側又は−X側において保持部材221に隣接する部分のX軸に沿ったサイズよりも大きくてもよい。待避部材223が外周部材222の一部であるため、待避部材223の上面ESは、外周部材222の上面OSの一部に相当する。従って、待避部材223の上面ESもまた、外周部材222の上面OSと同様に、保持部材221が保持する試料Wの表面WSuと同じ高さに位置する。尚、この待避部材223が形成されている技術的理由については、後に詳述する(図5(a)以降参照)。尚、待避部材223の上面ESの一部に、ビーム照射装置1による電子ビームEBの位置と、ステージ22の位置(XYZ方向における位置)とを紐付けるためのマークを設けてもよい。尚、外周面の上面OS及び待避部材223の上面ESの少なくとも一方を外部面と称してもよい。 The outer peripheral member 222 includes a retaining member 223 adjacent to the holding member 221 in one direction along the XY plane as a part of the outer peripheral member 222. When the outer peripheral member 222 is a member separate from the holding member 221 as described above, the shunting member 223 corresponding to a part of the outer peripheral member 222 is also a member separate from the holding member 221. May be good. Even when the outer peripheral member 222 is the same member as the holding member 221, the shunting member 223 may be a member separate from the holding member 221. The shunting member 223 spreads in the direction away from the holding member 221 in the XY plane. The size of the shunting member 223 (specifically, the size in the direction away from the holding member 221) is larger than the size of the portion of the outer peripheral member 222 adjacent to the holding member 221 in a direction different from one direction. May be good. That is, in the XY plane, the portion of the outer peripheral member 222 located in one direction with respect to the holding member 221 (that is, the shunting member 223) is in a different direction from the one with respect to the holding member 221. It may have a structure that spreads outward relatively more than the located portion (that is, spreads away from the holding member 221). In the example shown in FIGS. 4 (a) to 4 (c), the outer peripheral member 222 is adjacent to the holding member 221 along the Y-axis direction (particularly, is adjacent to the holding member 221 on the −Y side of the holding member 221). Includes a shunting member 223. Therefore, the size of the relief member 223 along the Y-axis may be larger than the size of the portion of the outer peripheral member 222 adjacent to the holding member 221 on the + Y side along the Y-axis, and of the outer peripheral member 222. It may be larger than the size along the X axis of the portion adjacent to the holding member 221 on the + X side or the −X side. Since the shunting member 223 is a part of the outer peripheral member 222, the upper surface ES of the shunting member 223 corresponds to a part of the upper surface OS of the outer peripheral member 222. Therefore, the upper surface ES of the shunting member 223 is also located at the same height as the surface WSu of the sample W held by the holding member 221 like the upper surface OS of the outer peripheral member 222. The technical reason why the shunting member 223 is formed will be described in detail later (see FIGS. 5A and later). A mark for associating the position of the electron beam EB by the beam irradiation device 1 with the position of the stage 22 (position in the XYZ direction) may be provided on a part of the upper surface ES of the shunting member 223. At least one of the upper surface OS of the outer peripheral surface and the upper surface ES of the shunting member 223 may be referred to as an outer surface.

再び図1において、ステージ22は、制御装置4の制御下で、試料Wを保持したまま、X軸方向、Y軸方向、Z軸方向、θX方向、θY方向及びθZ方向の少なくとも一つに沿って移動可能である。ステージ22を移動させるために、ステージ装置2は、ステージ駆動系23を備えている。ステージ駆動系23は、例えば、任意のモータ(例えば、リニアモータ等)を用いて、ステージ22を移動させる。更に、ステージ装置2は、ステージ22の位置を計測する位置計測器24を備えている。位置計測器24は、例えば、エンコーダ及びレーザ干渉計のうちの少なくとも一方を含む。尚、ステージ22が試料Wを保持している場合には、制御装置4は、ステージ22の位置から試料Wの位置を特定可能である。 Again, in FIG. 1, under the control of the control device 4, the stage 22 is along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction while holding the sample W. It is movable. In order to move the stage 22, the stage device 2 includes a stage drive system 23. The stage drive system 23 moves the stage 22 by using, for example, an arbitrary motor (for example, a linear motor or the like). Further, the stage device 2 includes a position measuring instrument 24 for measuring the position of the stage 22. The position measuring instrument 24 includes, for example, at least one of an encoder and a laser interferometer. When the stage 22 holds the sample W, the control device 4 can specify the position of the sample W from the position of the stage 22.

ステージ22がXY平面に沿って移動すると、XY平面に沿った方向における試料Wとビーム照射装置1との相対位置が変わる。このため、ステージ22がXY平面に沿って移動すると、XY平面に沿った方向における試料Wと試料Wの表面WSuにおける電子ビームEBの照射領域との相対位置が変わる。つまり、ステージ22がXY平面に沿って移動すると、XY平面に沿った方向(つまり、試料Wの表面WSuに沿った方向)において、電子ビームEBの照射領域が試料Wの表面WSuに対して移動する。更に、ステージ22がXY平面に沿って移動すると、XY平面に沿った方向における試料Wとビーム通過空間SPb3及び真空領域VSPとの相対位置が変わる。つまり、ステージ22がXY平面に沿って移動すると、XY平面に沿った方向(つまり、試料Wの表面WSuに沿った方向)において、ビーム通過空間SPb3及び真空領域VSPが試料Wの表面WSuに対して移動する。制御装置4は、試料Wの表面WSuの所望位置に電子ビームEBが照射され且つビーム通過空間SPb3が設定される(つまり、真空領域VSPが形成される)ように、ステージ駆動系23を制御してステージ22をXY平面に沿って移動させてもよい。具体的には、例えば、制御装置4は、試料Wの表面WSuの第1部分に真空領域VSPが形成されるように、ステージ駆動系23を制御してステージ22をXY平面に沿って移動させる。試料Wの表面WSuの第1部分に真空領域VSPが形成されるようにステージ22が移動した後、ビーム照射装置1は、試料Wの表面WSuの第1部分に電子ビームEBを照射して、第1部分の状態を計測する。ビーム照射装置1が試料Wの表面WSuの第1部分に電子ビームEBを照射している期間中は、ステージ駆動系23は、ステージ22をXY平面に沿って移動させなくてもよい。第1部分の状態の計測が完了した後、制御装置4は、試料Wの表面WSuの第2部分に真空領域VSPが形成されるように、ステージ駆動系23を制御してステージ22をXY平面に沿って移動させる。試料Wの表面WSuの第2部分に真空領域VSPが形成されるようにステージ22が移動した後、ビーム照射装置1は、試料Wの表面WSuの第2部分に電子ビームEBを照射して、第2部分の状態を計測する。ビーム照射装置1が試料Wの表面WSuの第2部分に電子ビームEBを照射している期間中もまた、ステージ駆動系23は、ステージ22をXY平面に沿って移動させなくてもよい。以降、同様の動作が繰り返されることで、試料Wの表面WSuの状態が計測される。 When the stage 22 moves along the XY plane, the relative position of the sample W and the beam irradiator 1 in the direction along the XY plane changes. Therefore, when the stage 22 moves along the XY plane, the relative positions of the sample W and the irradiation region of the electron beam EB on the surface WSu of the sample W in the direction along the XY plane change. That is, when the stage 22 moves along the XY plane, the irradiation region of the electron beam EB moves with respect to the surface WSu of the sample W in the direction along the XY plane (that is, the direction along the surface WSu of the sample W). To do. Further, when the stage 22 moves along the XY plane, the relative positions of the sample W and the beam passing space SPb3 and the vacuum region VSP in the direction along the XY plane change. That is, when the stage 22 moves along the XY plane, the beam passage space SPb3 and the vacuum region VSP with respect to the surface WSu of the sample W in the direction along the XY plane (that is, the direction along the surface WSu of the sample W). To move. The control device 4 controls the stage drive system 23 so that the electron beam EB is irradiated to a desired position on the surface WSu of the sample W and the beam passage space SPb3 is set (that is, the vacuum region VSP is formed). The stage 22 may be moved along the XY plane. Specifically, for example, the control device 4 controls the stage drive system 23 to move the stage 22 along the XY plane so that the vacuum region VSP is formed on the first portion of the surface WSu of the sample W. .. After the stage 22 is moved so that the vacuum region VSP is formed on the first portion of the surface WSu of the sample W, the beam irradiation device 1 irradiates the first portion of the surface WSu of the sample W with the electron beam EB. Measure the state of the first part. While the beam irradiator 1 is irradiating the first portion of the surface WSu of the sample W with the electron beam EB, the stage drive system 23 does not have to move the stage 22 along the XY plane. After the measurement of the state of the first part is completed, the control device 4 controls the stage drive system 23 so that the vacuum region VSP is formed on the second part of the surface WSu of the sample W, and sets the stage 22 on the XY plane. Move along. After the stage 22 has moved so that the vacuum region VSP is formed on the second portion of the surface WSu of the sample W, the beam irradiator 1 irradiates the second portion of the surface WSu of the sample W with the electron beam EB. Measure the state of the second part. The stage drive system 23 does not have to move the stage 22 along the XY plane also during the period in which the beam irradiation device 1 irradiates the second portion of the surface WSu of the sample W with the electron beam EB. After that, the state of the surface WSu of the sample W is measured by repeating the same operation.

ステージ22がZ軸に沿って移動すると、Z軸に沿った方向における試料Wとビーム照射装置1との相対位置が変わる。このため、ステージ22がZ軸に沿って移動すると、Z軸に沿った方向における試料Wと電子ビームEBのフォーカス位置との相対位置が変わる。制御装置4は、試料Wの表面WSuに(或いは、表面WSuの近傍に)電子ビームEBのフォーカス位置が設定されるように、ステージ駆動系23を制御してステージ22をZ軸に沿って移動させてもよい。ここで、電子ビームEBのフォーカス位置は、ビーム光学系11の結像位置に対応する焦点位置又は電子ビームEBのぼけが最も少なくなるようなZ軸方向の位置であってもよい。 When the stage 22 moves along the Z axis, the relative position of the sample W and the beam irradiator 1 in the direction along the Z axis changes. Therefore, when the stage 22 moves along the Z axis, the relative position between the sample W and the focus position of the electron beam EB in the direction along the Z axis changes. The control device 4 controls the stage drive system 23 to move the stage 22 along the Z axis so that the focus position of the electron beam EB is set on the surface WSu of the sample W (or in the vicinity of the surface WSu). You may let me. Here, the focus position of the electron beam EB may be a focus position corresponding to the image formation position of the beam optical system 11 or a position in the Z-axis direction that minimizes the blurring of the electron beam EB.

更に、ステージ22がZ軸に沿って移動すると、試料Wとビーム照射装置1との間の間隔Dが変わる。このため、ステージ駆動系23は、制御装置4の制御下で、後述する間隔調整系14と協調しながら、間隔Dが所望間隔D_targetとなるようにステージ22を移動させてもよい。このとき、制御装置4は、位置計測装置24の計測結果(更には、後述するビーム照射装置1の位置(特に、真空形成部材121の位置)を計測する位置計測装置15の計測結果)に基づいて、実際の間隔Dを特定すると共に、特定した間隔Dが所望間隔D_targetとなるようにステージ駆動系23及び間隔調整系14の少なくとも一方を制御する。このため、位置計測装置15及び24は、間隔Dを検出する検出装置としても機能し得る。尚、試料WのZ軸方向の厚み(寸法)が既知である場合、制御装置4は、実際の間隔Dに代えて/或いは加えて、ビーム照射装置1と基準面(例えば基準板の表面)とのZ軸方向における距離に関する情報と、試料WのZ軸方向の厚み(寸法)に関する情報とを用いて、ビーム照射装置1から試料Wまでの距離を目標となる距離となるように、ステージ駆動系23及び間隔調整系14のうち少なくとも一方を制御してもよい。 Further, as the stage 22 moves along the Z axis, the distance D between the sample W and the beam irradiator 1 changes. Therefore, the stage drive system 23 may move the stage 22 under the control of the control device 4 so that the interval D becomes a desired interval D_taget in cooperation with the interval adjusting system 14 described later. At this time, the control device 4 is based on the measurement result of the position measurement device 24 (furthermore, the measurement result of the position measurement device 15 that measures the position of the beam irradiation device 1 (particularly, the position of the vacuum forming member 121) described later). Therefore, the actual interval D is specified, and at least one of the stage drive system 23 and the interval adjusting system 14 is controlled so that the specified interval D becomes the desired interval D_taget. Therefore, the position measuring devices 15 and 24 can also function as detection devices for detecting the interval D. When the thickness (dimensions) of the sample W in the Z-axis direction is known, the control device 4 replaces / or adds to the actual interval D with the beam irradiation device 1 and the reference surface (for example, the surface of the reference plate). Using the information about the distance in the Z-axis direction and the information about the thickness (dimensions) of the sample W in the Z-axis direction, the stage so that the distance from the beam irradiation device 1 to the sample W becomes the target distance. At least one of the drive system 23 and the interval adjustment system 14 may be controlled.

支持フレーム3は、ビーム照射装置1を支持する。具体的には、支持フレーム3は、支持脚31と、支持部材32とを備える。支持脚31は、支持面SF上に配置される。支持脚31と支持面SFとの間には、支持面SFの振動の支持脚31への伝達を防止するため、或いは低減するための不図示の防振装置が設置されていてもよい。支持脚31は、例えば、支持面SFから上方に延びる部材である。支持脚31は、支持部材32を支持する。支持部材32は、平面視において、中心に開口321が形成された環状のプレート部材である。支持部材32の上面には、間隔調整系14を介して、ビーム照射装置1の外面(図1から図3に示す例では、差動排気系12が備える側壁部材122の外面)から外側に延びるフランジ部材13の下面が連結されている。このとき、ビーム照射装置1は、開口321を貫通するように配置される。その結果、支持フレーム3は、ビーム照射装置1を支持部材32の上面から持ち上げるように支持することができる。但し、支持フレーム3は、ビーム照射装置1を支持することができる限りは、図1に示す支持方法とは異なる他の支持方法でビーム照射装置1を支持してもよい。例えば、支持フレーム3は、ビーム照射装置1を支持部材32の下面から吊り下げるように支持してもよい。尚、支持脚31と支持部材32との間に、支持面SFの振動の支持部材32への伝達を防止する、或いは低減するための不図示の防振装置が設けられていてもよい。 The support frame 3 supports the beam irradiation device 1. Specifically, the support frame 3 includes support legs 31 and support members 32. The support legs 31 are arranged on the support surface SF. A vibration isolator (not shown) may be installed between the support legs 31 and the support surface SF to prevent or reduce the vibration of the support surface SF to the support legs 31. The support leg 31 is, for example, a member extending upward from the support surface SF. The support legs 31 support the support member 32. The support member 32 is an annular plate member having an opening 321 formed in the center in a plan view. The upper surface of the support member 32 extends outward from the outer surface of the beam irradiation device 1 (in the example shown in FIGS. 1 to 3, the outer surface of the side wall member 122 included in the differential exhaust system 12) via the interval adjusting system 14. The lower surface of the flange member 13 is connected. At this time, the beam irradiation device 1 is arranged so as to penetrate the opening 321. As a result, the support frame 3 can support the beam irradiation device 1 so as to lift it from the upper surface of the support member 32. However, the support frame 3 may support the beam irradiation device 1 by a support method different from the support method shown in FIG. 1 as long as the beam irradiation device 1 can be supported. For example, the support frame 3 may support the beam irradiation device 1 so as to suspend it from the lower surface of the support member 32. A vibration isolator (not shown) may be provided between the support legs 31 and the support member 32 to prevent or reduce the transmission of the vibration of the support surface SF to the support member 32.

間隔調整系14は、少なくともZ軸に沿ってビーム照射装置1を移動させることで、真空形成部材121の射出面121LSと試料Wの表面WSuとの間の間隔D、或いは真空形成部材121の射出面121LSから試料Wの表面WSuまでのZ軸方向の距離を調整する。例えば、間隔調整系14は、間隔Dが所望間隔D_targetとなるように、ビーム照射装置1をZ軸方向に沿って移動させてもよい。このような間隔調整系14として、例えば、モータの駆動力を用いてビーム照射装置1を移動させる駆動系、ピエゾ素子の圧電効果によって発生する力を用いてビーム照射装置1を移動させる駆動系、クーロン力(例えば、少なくとも2つの電極間に発生する静電力)を用いてビーム照射装置1を移動させる駆動系、及び、ローレンツ力(例えば、コイルと磁極との間に発生する電磁力)を用いてビーム照射装置1を移動させる駆動系の少なくとも一つが用いられてもよい。但し、射出面121LSと表面WSuとの間の間隔Dを固定したままでよい場合には、間隔調整系14に代えて、シム等の間隔調整部材が、支持部材32とフランジ部材13との間に配置されていてもよい。尚、この場合、シム等の間隔調整部材は支持部材32とフランジ部材13との間に配置されていなくてもよい。また、ビーム照射装置1は、XY方向に沿って移動可能であってもよい。 The interval adjusting system 14 moves the beam irradiation device 1 along at least the Z axis to eject the interval D between the injection surface 121LS of the vacuum forming member 121 and the surface WSu of the sample W, or the injection of the vacuum forming member 121. The distance in the Z-axis direction from the surface 121LS to the surface WSu of the sample W is adjusted. For example, the interval adjusting system 14 may move the beam irradiation device 1 along the Z-axis direction so that the interval D becomes a desired interval D_taget. As such an interval adjusting system 14, for example, a drive system that moves the beam irradiation device 1 by using the driving force of the motor, and a drive system that moves the beam irradiation device 1 by using the force generated by the piezoelectric effect of the piezo element. A drive system that moves the beam irradiation device 1 using a Coulomb force (for example, an electrostatic force generated between at least two electrodes) and a Lorentz force (for example, an electromagnetic force generated between a coil and a magnetic pole) are used. At least one of the drive systems for moving the beam irradiation device 1 may be used. However, if the distance D between the injection surface 121LS and the surface WSu can be kept fixed, a space adjustment member such as a shim is placed between the support member 32 and the flange member 13 instead of the space adjustment system 14. It may be arranged in. In this case, the spacing adjusting member such as a shim may not be arranged between the support member 32 and the flange member 13. Further, the beam irradiation device 1 may be movable along the XY direction.

間隔調整系14によって移動可能なビーム照射装置1のZ方向における位置(特に、真空形成部材121のZ方向における位置)を計測するために、走査型電子顕微鏡SEMは、位置計測器15を備えている。位置計測器15は、例えば、エンコーダ及びレーザ干渉計のうちの少なくとも一方を含む。尚、位置計測器15は、ビーム照射装置1のXY方向における位置やθX方向、θY方向における姿勢を計測してもよい。また、ビーム照射装置1のXY方向における位置やθX方向、θY方向における姿勢を計測する計測装置が位置計測器15と別に設けられていてもよい。 In order to measure the position of the beam irradiation device 1 movable by the interval adjusting system 14 in the Z direction (particularly, the position of the vacuum forming member 121 in the Z direction), the scanning electron microscope SEM includes a position measuring instrument 15. There is. The position measuring instrument 15 includes, for example, at least one of an encoder and a laser interferometer. The position measuring instrument 15 may measure the position of the beam irradiation device 1 in the XY direction, the posture in the θX direction, and the posture in the θY direction. Further, a measuring device for measuring the position of the beam irradiation device 1 in the XY direction, the posture in the θX direction, and the posture in the θY direction may be provided separately from the position measuring device 15.

制御装置4は、走査型電子顕微鏡SEMの動作を制御する。例えば、制御装置4は、電子ビームEBを試料Wに照射するように、ビーム照射装置1を制御する。例えば、制御装置4は、ビーム通過空間SPb1からSPb3を真空空間にするように、ポンプ系5(特に、真空ポンプ51及び52)を制御する。例えば、制御装置4は、試料Wの表面WSuの所望位置に電子ビームEBが照射されるように、ステージ駆動系23を制御する。例えば、制御装置4は、真空形成部材121の射出面121LSと試料Wの表面WSuとの間の間隔Dが所望間隔D_targetとなるように、間隔調整系14を制御する。尚、走査型電子顕微鏡SEMの動作を制御するために、制御装置4は、例えば、CPU(Central Processing Unit)等の演算装置及びメモリ等の記憶装置の少なくとも一方を含んでいてもよい。 The control device 4 controls the operation of the scanning electron microscope SEM. For example, the control device 4 controls the beam irradiation device 1 so as to irradiate the sample W with the electron beam EB. For example, the control device 4 controls the pump system 5 (particularly, the vacuum pumps 51 and 52) so that the beam passing spaces SPb1 to SPb3 are made into a vacuum space. For example, the control device 4 controls the stage drive system 23 so that the electron beam EB is irradiated to a desired position on the surface WSu of the sample W. For example, the control device 4 controls the interval adjusting system 14 so that the interval D between the injection surface 121LS of the vacuum forming member 121 and the surface WSu of the sample W is a desired interval D_taget. In order to control the operation of the scanning electron microscope SEM, the control device 4 may include at least one of an arithmetic unit such as a CPU (Central Processing Unit) and a storage device such as a memory.

(2)待避部材223の利用方法
続いて、ステージ22が備える待避部材223の利用方法について説明する。本実施形態では、待避部材223は、主として、ビーム照射装置1が形成している真空領域VSPを維持する(言い換えれば、形成し続ける)ために用いられる。このため、待避部材223は、ビーム照射装置1と待避部材223との間に真空領域VSPを形成することができる程度のサイズを有していてもよい。待避部材223の上面ESは、真空領域VSPのXY方向におけるサイズよりも大きなサイズを有していてもよい。このような待避部材223を用いて真空領域VSPを維持する場面の一例として、ステージ22が保持する試料Wを搬出入する(或いは、交換する)場面及び真空領域VSPを形成していなかったビーム照射装置1が真空領域VSPを新たに形成する場面があげられる。このため、以下では、待避部材223を用いて真空領域VSPを維持する方法について説明した後に、ステージ22が保持する試料Wを搬出入する場合に待避部材223を用いて真空領域VSPを維持する動作と、真空領域VSPを形成していなかったビーム照射装置1が真空領域VSPを新たに形成する場合に待避部材223を用いて真空領域VSPを維持する動作とを順に説明する。
(2) How to Use the Escape Member 223 Next, a method of using the escape member 223 included in the stage 22 will be described. In the present embodiment, the shunting member 223 is mainly used to maintain (in other words, continue to form) the vacuum region VSP formed by the beam irradiation device 1. Therefore, the shunting member 223 may have a size capable of forming a vacuum region VSP between the beam irradiation device 1 and the shunting member 223. The upper surface ES of the shunting member 223 may have a size larger than the size of the vacuum region VSP in the XY direction. As an example of a scene in which the vacuum region VSP is maintained by using such a retreat member 223, a scene in which the sample W held by the stage 22 is carried in and out (or exchanged) and beam irradiation in which the vacuum region VSP is not formed are performed. There is a scene where the device 1 newly forms a vacuum region VSP. Therefore, in the following, after explaining the method of maintaining the vacuum region VSP using the shunt member 223, the operation of maintaining the vacuum region VSP using the shunt member 223 when the sample W held by the stage 22 is carried in and out. And the operation of maintaining the vacuum region VSP by using the shunting member 223 when the beam irradiation device 1 that has not formed the vacuum region VSP newly forms the vacuum region VSP will be described in order.

(2−1)待避部材223を用いた真空領域VSPの維持
初めに、図5(a)から図5(b)、図6(a)から図6(b)及び図7(a)から図7(b)を参照しながら、待避部材223を用いて、ビーム照射装置1が形成していた真空領域VSPを維持する方法について説明する。
(2-1) Maintenance of Vacuum Region VSP Using Reservation Member 223 First , FIGS. 5 (a) to 5 (b), 6 (a) to 6 (b), and 7 (a) to FIGS. A method of maintaining the vacuum region VSP formed by the beam irradiation device 1 by using the shunting member 223 will be described with reference to 7 (b).

上述したように、待避部材223の上面ESは、保持部材221が保持する試料Wの表面WSuと同じ高さに位置する。このため、ビーム照射装置1が試料Wから待避部材223へと外れるように(つまり、試料Wに対向していたビーム照射装置1が待避部材223と対向するように)ステージ22が移動した場合であっても、ビーム照射装置1が試料Wとの間に形成していた真空領域VSPは、ビーム照射装置1と待避部材223との間においても同様に維持される。同様に、ビーム照射装置1が待避部材223から試料Wへと外れるように(つまり、待避部材223に対向していたビーム照射装置1が試料Wと対向するように)ステージ22が移動した場合であっても、ビーム照射装置1が待避部材223との間に形成していた真空領域VSPは、ビーム照射装置1と試料Wとの間においても同様に維持される。従って、待避部材223は、ビーム照射装置1が形成している真空領域VSPの維持のために利用可能である。つまり、待避部材223は、ステージ22の移動に伴ってビーム照射装置1が試料Wと待避部材223との間で移動する場合に真空領域VSPを維持するために利用可能である。ここで、ビーム照射装置1が試料Wから待避部材223へと外れることは、ビーム照射装置1による電子ビームEBの照射位置が試料W上にある状態から待避部材223の上面ESにある状態に変わると称してもよく、ビーム照射装置1が待避部材223から試料Wへと外れることは、ビーム照射装置1による電子ビームEBの照射位置が待避部材223の上面ES上にある状態から試料W上にある状態に変わると称してもよい。 As described above, the upper surface ES of the shunting member 223 is located at the same height as the surface WSu of the sample W held by the holding member 221. Therefore, when the stage 22 is moved so that the beam irradiation device 1 is detached from the sample W to the shunting member 223 (that is, the beam irradiating device 1 facing the sample W faces the shunting member 223). Even if there is, the vacuum region VSP formed by the beam irradiation device 1 between the sample W and the sample W is similarly maintained between the beam irradiation device 1 and the shunting member 223. Similarly, when the stage 22 is moved so that the beam irradiation device 1 disengages from the shunting member 223 to the sample W (that is, the beam irradiating device 1 facing the shunting member 223 faces the sample W). Even if there is, the vacuum region VSP formed between the beam irradiation device 1 and the shunting member 223 is similarly maintained between the beam irradiation device 1 and the sample W. Therefore, the shunting member 223 can be used to maintain the vacuum region VSP formed by the beam irradiation device 1. That is, the shunt member 223 can be used to maintain the vacuum region VSP when the beam irradiator 1 moves between the sample W and the shunt member 223 as the stage 22 moves. Here, the detachment of the beam irradiation device 1 from the sample W to the repellent member 223 changes from the state in which the irradiation position of the electron beam EB by the beam irradiation device 1 is on the sample W to the state in which it is on the upper surface ES of the retreat member 223. The fact that the beam irradiation device 1 deviates from the repellent member 223 to the sample W means that the irradiation position of the electron beam EB by the beam irradiation device 1 is on the sample W from the state where the irradiation position of the electron beam EB is on the upper surface ES of the retreat member 223. It may be said that it changes to a certain state.

具体的には、図5(a)及び図5(b)に示すように、ビーム照射装置1が試料Wとの間に真空領域VSPを形成している状況を想定する。つまり、ビーム照射装置1が試料Wに対向している状況を想定する。この状況において、ステージ駆動系23がステージ22をY軸方向に沿って且つ+Y側に向かって移動させると、ビーム照射装置1は、ステージ22に対してY軸方向に沿って且つ−Y側に向かって相対的に移動する。その結果、ビーム照射装置1が形成している真空領域VSPもまた、試料Wの表面WSu上において、ステージ22に対してY軸方向に沿って且つ−Y側に向かって相対的に移動する。ステージ22が移動し続けると、図6(a)及び図6(b)に示す状態を経て、図7(a)及び図7(b)に示すように、ビーム照射装置1は、試料Wを外れる。つまり、ビーム照射装置1の状態は、試料Wに対向する非待避状態から待避部材223に対向する待避状態へと切り替わる。つまり、ビーム照射装置1の状態は、試料Wとの間に真空領域VSPを形成可能な非待避状態から待避部材223との間に真空領域VSPに形成可能な待避状態へと切り替わる。 Specifically, as shown in FIGS. 5A and 5B, it is assumed that the beam irradiation device 1 forms a vacuum region VSP with the sample W. That is, it is assumed that the beam irradiation device 1 faces the sample W. In this situation, when the stage drive system 23 moves the stage 22 along the Y-axis direction and toward the + Y side, the beam irradiation device 1 moves the stage 22 along the Y-axis direction and toward the −Y side. Move relatively toward. As a result, the vacuum region VSP formed by the beam irradiation device 1 also moves relative to the stage 22 along the Y-axis direction and toward the −Y side on the surface WSu of the sample W. As the stage 22 continues to move, the beam irradiator 1 moves the sample W through the states shown in FIGS. 6 (a) and 6 (b), as shown in FIGS. 7 (a) and 7 (b). It comes off. That is, the state of the beam irradiation device 1 is switched from the non-shelter state facing the sample W to the shunting state facing the shunting member 223. That is, the state of the beam irradiation device 1 is switched from a non-shelter state capable of forming a vacuum region VSP with the sample W to a shunting state capable of forming a vacuum region VSP with the retreat member 223.

ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる過程で、図6(a)及び図6(b)に示すように、ビーム照射装置1の状態は、一時的に、試料W及び待避部材223の双方に対向する中間状態になる。つまり、ビーム照射装置1の状態は、一時的に、試料Wと待避部材223との境界に面する真空領域VSPを形成する中間状態になる。ここで、仮に待避部材223の上面ESが試料Wの表面WSuとは大きく異なる高さに位置している場合には、中間状態にあるビーム照射装置1と試料Wとの間の間隔Dと、中間状態にあるビーム照射装置1と待避部材223との間の間隔D’(つまり、ビーム照射装置1の射出面121LSと待避部材223の上面ESとの間の間隔D’)とが相対的に大きくずれる可能性がある。このため、間隔Dが、真空領域VSPを適切に形成可能な間隔になる一方で、間隔D’が、真空領域VSPを適切に形成可能な間隔にならない可能性がある。その結果、試料Wとの間に真空領域VSPを適切に形成していたビーム照射装置1の状態が非待避状態から中間状態へと切り替わった時点で、ビーム照射装置1が形成していた真空領域VSPが破壊される(言い換えれば、崩壊する又は消滅する)可能性がある。つまり、ビーム照射装置1の状態が非待避状態から中間状態へと切り替わる際に、ビーム照射装置1が、試料Wと待避部材223との境界に面する真空領域VSPを形成することができなくなる可能性がある。その結果、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる際に、ビーム照射装置1が真空領域VSPを適切に形成し続ける(つまり、維持する)ことができなくなる可能性がある。この場合、走査型電子顕微鏡SEMは、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わった後に、ビーム照射装置1と待避部材223との間の間隔D’が所望間隔D_targetになるように間隔D’を調整した上で真空領域VSPを再度形成することになる。 In the process of switching the state of the beam irradiating device 1 from the non-shelter state to the shunting state, as shown in FIGS. 6 (a) and 6 (b), the state of the beam irradiating device 1 temporarily changes to the sample W and It is in an intermediate state facing both sides of the shunting member 223. That is, the state of the beam irradiation device 1 temporarily becomes an intermediate state in which the vacuum region VSP facing the boundary between the sample W and the shunting member 223 is formed. Here, if the upper surface ES of the retreat member 223 is located at a height significantly different from the surface WSu of the sample W, the distance D between the beam irradiation device 1 in the intermediate state and the sample W and the distance D, The distance D'between the beam irradiation device 1 in the intermediate state and the relief member 223 (that is, the distance D'between the injection surface 121LS of the beam irradiation device 1 and the upper surface ES of the relief member 223) is relatively large. There is a possibility of a large deviation. Therefore, while the interval D is an interval at which the vacuum region VSP can be appropriately formed, the interval D'may not be an interval at which the vacuum region VSP can be appropriately formed. As a result, when the state of the beam irradiation device 1 that appropriately formed the vacuum region VSP with the sample W was switched from the non-reserved state to the intermediate state, the vacuum region formed by the beam irradiation device 1 was formed. The VSP can be destroyed (in other words, it collapses or disappears). That is, when the state of the beam irradiation device 1 is switched from the non-shelter state to the intermediate state, the beam irradiation device 1 may not be able to form the vacuum region VSP facing the boundary between the sample W and the shunt member 223. There is sex. As a result, when the state of the beam irradiator 1 is switched from the non-shelter state to the shunt state, the beam irradiator 1 may not be able to properly continue to form (that is, maintain) the vacuum region VSP. .. In this case, in the scanning electron microscope SEM, after the state of the beam irradiation device 1 is switched from the non-reservoir state to the retreat state, the distance D'between the beam irradiation device 1 and the retreat member 223 becomes the desired distance D_target. After adjusting the interval D'as described above, the vacuum region VSP will be formed again.

しかるに、本実施形態では、待避部材223の上面ESが試料Wの表面WSuと同じ高さに位置している。このため、中間状態にあるビーム照射装置1と試料Wとの間の間隔Dと、中間状態にあるビーム照射装置1と待避部材223との間の間隔D’とが相対的に大きくずれる可能性は相対的には小さい。典型的には、間隔Dは、間隔D’と一致する。従って、間隔Dが、真空領域VSPを適切に形成可能な間隔になっている場合には、間隔D’もまた、真空領域VSPを適切に形成可能な間隔になる。このため、試料Wとの間に真空領域VSPを適切に形成していたビーム照射装置1の状態が非待避状態から中間状態へと切り替わったとしても、ビーム照射装置1が形成していた真空領域VSPが破壊される可能性は相対的に小さい。つまり、ビーム照射装置1の状態が非待避状態から中間状態へと切り替わったとしても、ビーム照射装置1は、試料Wと待避部材223との境界に面する真空領域VSPを適切に形成することができる。その結果、ビーム照射装置1の状態が非待避状態から中間状態へと切り替わったとしても、ビーム照射装置1は、真空領域VSPを適切に形成し続ける(つまり、維持する)ことができる。このため、ビーム照射装置1の状態が非待避状態から中間状態を経て待避状態へと切り替わったとしても、ビーム照射装置1は、真空領域VSPを適切に形成し続けることができる。つまり、走査型電子顕微鏡SEMは、真空領域VSPを形成したまま、ビーム照射装置1の状態を、非待避状態から待避状態へと切り替えることができる。 However, in the present embodiment, the upper surface ES of the shunting member 223 is located at the same height as the surface WSu of the sample W. Therefore, there is a possibility that the distance D between the beam irradiation device 1 in the intermediate state and the sample W and the distance D'between the beam irradiation device 1 in the intermediate state and the shunting member 223 are relatively large. Is relatively small. Typically, the interval D coincides with the interval D'. Therefore, when the interval D is an interval at which the vacuum region VSP can be appropriately formed, the interval D'is also an interval at which the vacuum region VSP can be appropriately formed. Therefore, even if the state of the beam irradiation device 1 in which the vacuum region VSP is appropriately formed with the sample W is switched from the non-reserved state to the intermediate state, the vacuum region formed by the beam irradiation device 1 is formed. The possibility that the VSP will be destroyed is relatively small. That is, even if the state of the beam irradiation device 1 is switched from the non-shelter state to the intermediate state, the beam irradiation device 1 can appropriately form the vacuum region VSP facing the boundary between the sample W and the shunt member 223. it can. As a result, even if the state of the beam irradiation device 1 is switched from the non-shelter state to the intermediate state, the beam irradiation device 1 can continue to properly form (that is, maintain) the vacuum region VSP. Therefore, even if the state of the beam irradiating device 1 is switched from the non-shelter state to the shunting state through the intermediate state, the beam irradiating device 1 can continue to appropriately form the vacuum region VSP. That is, the scanning electron microscope SEM can switch the state of the beam irradiation device 1 from the non-shelter state to the shunt state while forming the vacuum region VSP.

同様の理由から、ビーム照射装置1の状態が待避状態から中間状態を経て非待避状態へと切り替わったとしても、ビーム照射装置1は、真空領域VSPを適切に形成し続けることができる。つまり、走査型電子顕微鏡SEMは、真空領域VSPを形成したまま、ビーム照射装置1の状態を、待避状態から非待避状態へと切り替えることができる。 For the same reason, even if the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state through the intermediate state, the beam irradiating device 1 can continue to properly form the vacuum region VSP. That is, the scanning electron microscope SEM can switch the state of the beam irradiation device 1 from the shunting state to the non-sheltering state while forming the vacuum region VSP.

この際、間隔調整系14及びステージ駆動系23の少なくとも一方は、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる前後において、非待避状態にあるビーム照射装置1と試料Wとの間の間隔Dと、待避状態にあるビーム照射装置1と待避部材223との間の間隔D’とのずれ量が許容下限値を下回るように(或いは、一致するように)、Z軸方向におけるステージ22とビーム照射装置1との相対位置を調整してもよい。例えば、間隔調整系14及びステージ駆動系23の少なくとも一方は、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる際に、非待避状態にあるビーム照射装置1と試料Wとの間の間隔Dが、ビーム照射装置1と試料Wとの間に真空領域VSPを適切に形成可能な所望の第1間隔D_desire1となっている状態から、待避状態にあるビーム照射装置1と待避部材223との間の間隔D’が、ビーム照射装置1と待避部分223との間に真空領域VSPを適切に形成可能な所望の第2間隔D_desire2となる状態へと遷移するように、Z軸方向におけるステージ22とビーム照射装置1との相対位置を調整してもよい。この場合、第1間隔D_desire1と第2間隔D_desire2との間の差分は、許容下限値を下回る又は一致する。或いは、第1間隔D_desire1と第2間隔D_desire2とは同一であってもよい。更に、第1間隔D_desire1及び第2間隔D_desire2の少なくとも一方は、上述した所望間隔D_targetと同一であってもよい。その後、ステージ駆動系23がXY平面に沿った方向におけるステージ22とビーム照射装置1との相対位置を調整して、ビーム照射装置1の状態を非待避状態から待避状態へと切り替えてもよい。同様に、例えば、間隔調整系14及びステージ駆動系23の少なくとも一方は、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる際に、待避状態にあるビーム照射装置1と待避部材223との間の間隔D’が第2間隔D_desire2となっている状態から、非待避状態にあるビーム照射装置1と試料Wとの間の間隔Dが第1間隔D_desire1となる状態へと遷移するように、Z軸方向におけるステージ22とビーム照射装置1との相対位置を調整してもよい。その後、ステージ駆動系23がXY平面に沿った方向におけるステージ22とビーム照射装置1との相対位置を調整して、ビーム照射装置1の状態を待避状態から非待避状態へと切り替えてもよい。その結果、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる前後において、ビーム照射装置1は、真空領域VSPをより適切に形成し続けることができる。 At this time, at least one of the interval adjusting system 14 and the stage drive system 23 is in the non-evacuated state before and after the state of the beam irradiation device 1 is switched from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state. Make sure that the amount of deviation between the distance D between the beam irradiation device 1 and the sample W and the distance D'between the beam irradiation device 1 in the shunting state and the shunting member 223 is less than the allowable lower limit (or match). The relative position of the stage 22 and the beam irradiation device 1 in the Z-axis direction may be adjusted. For example, at least one of the interval adjusting system 14 and the stage drive system 23 is between the beam irradiating device 1 in the non-reserved state and the sample W when the state of the beam irradiating device 1 is switched from the non-reserved state to the reserved state. From the state where the interval D is the desired first interval D_desire1 capable of appropriately forming a vacuum region VSP between the beam irradiation device 1 and the sample W, the beam irradiation device 1 and the relief member 223 are in a retreat state. In the Z-axis direction, the interval D'between and the beam irradiation device 1 transitions to a desired second interval D_desire2 in which the vacuum region VSP can be appropriately formed between the beam irradiation device 1 and the retreat portion 223. The relative position between the stage 22 and the beam irradiation device 1 may be adjusted. In this case, the difference between the first interval D_desire1 and the second interval D_desire2 is below or coincides with the allowable lower limit. Alternatively, the first interval D_desire1 and the second interval D_desire2 may be the same. Further, at least one of the first interval D_desire1 and the second interval D_desire2 may be the same as the desired interval D_target described above. After that, the stage drive system 23 may adjust the relative position between the stage 22 and the beam irradiation device 1 in the direction along the XY plane to switch the state of the beam irradiation device 1 from the non-shelter state to the shunt state. Similarly, for example, at least one of the interval adjusting system 14 and the stage drive system 23 is in the shunting state when the state of the beam irradiating device 1 is switched from the shunting state to the non-shunting state. The transition from the state where the interval D'between the two is the second interval D_desire2 to the state where the interval D between the beam irradiation device 1 in the non-evacuated state and the sample W is the first interval D_desire1. In addition, the relative position between the stage 22 and the beam irradiation device 1 in the Z-axis direction may be adjusted. After that, the stage drive system 23 may adjust the relative position between the stage 22 and the beam irradiation device 1 in the direction along the XY plane to switch the state of the beam irradiation device 1 from the shunting state to the non-sheltering state. As a result, before and after the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-save state, the beam irradiator 1 can continue to form the vacuum region VSP more appropriately. ..

尚、上述したように、本実施形態では、待避部材223の上面ESが試料Wの表面WSuと同じ高さに位置している。このため、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる前後において、Z軸方向におけるステージ22に対するビーム照射装置1の相対位置が変わらなければ(つまり、維持されれば)、間隔Dと間隔D’とが一致する。このため、間隔調整系14及びステージ駆動系23の少なくとも一方は、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる前後において、Z軸方向におけるステージ22とビーム照射装置1との相対位置を維持するように調整してもよい。 As described above, in the present embodiment, the upper surface ES of the shunting member 223 is located at the same height as the surface WSu of the sample W. Therefore, if the relative position of the beam irradiation device 1 with respect to the stage 22 in the Z-axis direction does not change before and after the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-save state ( That is, if maintained), the interval D and the interval D'match. Therefore, at least one of the interval adjusting system 14 and the stage drive system 23 has a stage in the Z-axis direction before and after the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. It may be adjusted so as to maintain the relative position between 22 and the beam irradiation device 1.

但し、間隔調整系14及びステージ駆動系23の少なくとも一方は、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる前後において、間隔Dと間隔D’とが異なるように、Z軸方向におけるステージ22とビーム照射装置1との相対位置を調整してもよい。この場合、間隔調整系14及びステージ駆動系23の少なくとも一方は、間隔Dが、ビーム照射装置1と試料Wとの間に真空領域VSPを適切に形成可能な第1間隔D_desire1になり且つ、間隔D’が、ビーム照射装置1と待避部材223との間に真空領域VSPを適切に形成可能であって且つ第1間隔D_desire1とは異なる第2間隔D_desire2になるように、Z軸方向におけるステージ22とビーム照射装置1との相対位置を調整してもよい。その結果、間隔Dと間隔D’とが一致しない場合においても、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる前後において、ビーム照射装置1は、真空領域VSPをより適切に形成し続けることができる。いずれにせよ、間隔調整系14及びステージ駆動系23の少なくとも一方は、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる前後において真空領域VSPが適切に維持されるように、ビーム照射装置1の状態の変更(つまり、XY平面に沿ったステージ22の移動)に合わせて又は相前後して、Z軸方向におけるステージ22とビーム照射装置1との相対位置を調整する。 However, at least one of the interval adjusting system 14 and the stage drive system 23 has an interval D and an interval D'before and after the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. The relative position of the stage 22 and the beam irradiation device 1 in the Z-axis direction may be adjusted so as to be different from the above. In this case, at least one of the interval adjusting system 14 and the stage drive system 23 has an interval D of the first interval D_desire1 capable of appropriately forming a vacuum region VSP between the beam irradiation device 1 and the sample W, and the interval D. The stage 22 in the Z-axis direction so that D'can appropriately form a vacuum region VSP between the beam irradiation device 1 and the retreat member 223 and has a second interval D_desire 2 different from the first interval D_desire 1. And the beam irradiation device 1 may be adjusted in relative position. As a result, even when the interval D and the interval D'do not match, the beam irradiation device 1 is used before and after the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. , The vacuum region VSP can continue to be formed more appropriately. In any case, at least one of the interval adjusting system 14 and the stage drive system 23 has an appropriate vacuum region VSP before and after the state of the beam irradiation device 1 is switched from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state. In accordance with the change in the state of the beam irradiator 1 (that is, the movement of the stage 22 along the XY plane) or before and after, the stage 22 and the beam irradiator 1 in the Z-axis direction are maintained. Adjust the relative position.

(2−2)ステージ22が保持する試料Wを搬出入する動作
続いて、図8(a)から図8(d)を参照しながら、ステージ22が保持する試料Wを搬出入する(つまり、交換する)場合に待避部材223を用いて真空領域VSPを維持する動作の流れについて説明する。
(2-2) Operation of loading and unloading the sample W held by the stage 22 Subsequently, referring to FIGS. 8A to 8D, the sample W held by the stage 22 is loaded and unloaded (that is,). The flow of the operation of maintaining the vacuum region VSP by using the shunting member 223 in the case of (replacement) will be described.

試料Wの搬出入は、例えば、ステージ22が保持している試料Wの状態の計測が完了した後に行われる。試料Wの状態の計測するために、ビーム照射装置1は、試料Wに電子ビームEBを照射する必要がある。このため、試料Wが搬出入される前は(つまり、ステージ22が試料Wを保持している期間の少なくとも一部では)、図8(a)に示すように、ビーム照射装置1は、試料Wに対向した状態で、試料Wとの間に真空領域VSPを形成している。つまり、ビーム照射装置1は、非待避状態にある。 The loading and unloading of the sample W is performed, for example, after the measurement of the state of the sample W held by the stage 22 is completed. In order to measure the state of the sample W, the beam irradiation device 1 needs to irradiate the sample W with the electron beam EB. Therefore, before the sample W is carried in and out (that is, at least a part of the period in which the stage 22 holds the sample W), as shown in FIG. 8 (a), the beam irradiator 1 uses the sample. A vacuum region VSP is formed between the sample W and the sample W in a state of facing the W. That is, the beam irradiation device 1 is in a non-evacuated state.

試料Wの状態の計測が完了した後に、図8(b)に示すように、ステージ駆動系23は、XY平面に沿ってステージ22を移動して、ビーム照射装置1の状態を、非待避状態から待避状態へと切り替える。この際、上述したように、間隔調整系14及びステージ駆動系23の少なくとも一方は、真空領域VSPが適切に維持されるようにZ軸方向におけるステージ22に対するビーム照射装置1の相対位置を調整してもよい。その結果、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる前後において、真空領域VSPが維持される。つまり、ビーム照射装置1は、真空領域VSPを試料W及び待避部材223の少なくとも一方との間に形成し続けたまま、ステージ22に対して移動する。 After the measurement of the state of the sample W is completed, as shown in FIG. 8B, the stage drive system 23 moves the stage 22 along the XY plane to change the state of the beam irradiation device 1 to the non-evacuated state. To switch to the shunting state. At this time, as described above, at least one of the interval adjusting system 14 and the stage driving system 23 adjusts the relative position of the beam irradiation device 1 with respect to the stage 22 in the Z-axis direction so that the vacuum region VSP is appropriately maintained. You may. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state. That is, the beam irradiator 1 moves with respect to the stage 22 while continuing to form the vacuum region VSP between the sample W and at least one of the shunting members 223.

ビーム照射装置1の状態が待避状態に切り替わった後、ステージ22が保持する試料Wが搬出入される。具体的には、図8(c)に示すように、ステージ22が保持する試料W(つまり、状態を計測する動作が終了した試料W)がステージ22からアンロードされる(つまり、搬出される)。その後、図8(d)に示すように、ステージ22に対して、新たな試料W(つまり、状態を計測する動作が新たに行われる試料W)がステージ22にロードされる(つまり、搬入される)。ステージ22が保持する試料Wが搬出入される期間中は、図8(c)及び図8(d)に示すように、ビーム照射装置1の状態は、待避状態のまま維持される。その結果、ステージ22が保持する試料Wが搬出入される期間中は、図8(c)及び図8(d)に示すように、ビーム照射装置1は、待避部材223との間に真空領域VSPを形成し続ける。 After the state of the beam irradiation device 1 is switched to the shunting state, the sample W held by the stage 22 is carried in and out. Specifically, as shown in FIG. 8C, the sample W held by the stage 22 (that is, the sample W whose state measurement operation has been completed) is unloaded from the stage 22 (that is, carried out). ). After that, as shown in FIG. 8D, a new sample W (that is, a sample W in which the operation of measuring the state is newly performed) is loaded (that is, carried in) to the stage 22. ). During the period in which the sample W held by the stage 22 is carried in and out, the state of the beam irradiating device 1 is maintained in the shunting state as shown in FIGS. 8 (c) and 8 (d). As a result, during the period in which the sample W held by the stage 22 is carried in and out, as shown in FIGS. 8 (c) and 8 (d), the beam irradiation device 1 has a vacuum region between the sample W and the shunting member 223. Continue to form VSP.

その後、ステージ22が保持する試料Wの搬出入が完了すると、ステージ駆動系23は、XY平面に沿ってステージ22を移動して、ビーム照射装置1の状態を、待避状態から非待避状態へと切り替える。この際も、上述したように、間隔調整系14及びステージ駆動系23の少なくとも一方は、真空領域VSPが適切に維持されるようにZ軸方向におけるステージ22に対するビーム照射装置1の相対位置を調整してもよい。その結果、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる前後において、真空領域VSPが維持される。つまり、ビーム照射装置1は、真空領域VSPを試料W及び待避部材223の少なくとも一方との間に形成し続けたまま、ステージ22に対して移動する。 After that, when the loading / unloading of the sample W held by the stage 22 is completed, the stage drive system 23 moves the stage 22 along the XY plane to change the state of the beam irradiation device 1 from the shunting state to the non-sheltering state. Switch. Also at this time, as described above, at least one of the interval adjustment system 14 and the stage drive system 23 adjusts the relative position of the beam irradiation device 1 with respect to the stage 22 in the Z-axis direction so that the vacuum region VSP is appropriately maintained. You may. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state. That is, the beam irradiator 1 moves with respect to the stage 22 while continuing to form the vacuum region VSP between the sample W and at least one of the shunting members 223.

その後、ビーム照射装置1の状態が非待避状態へと変わった後に、走査型電子顕微鏡SEMは、新たな試料Wに電子ビームEBを照射して新たな試料Wの状態を計測する。つまり、ビーム照射装置1は、試料Wとの間に形成している真空領域VSPを介して試料Wに電子ビームEBを照射する。 Then, after the state of the beam irradiating device 1 changes to the non-reserved state, the scanning electron microscope SEM irradiates the new sample W with the electron beam EB and measures the state of the new sample W. That is, the beam irradiation device 1 irradiates the sample W with the electron beam EB via the vacuum region VSP formed between the beam irradiation device 1 and the sample W.

このように、走査型電子顕微鏡SEMは、真空領域VSPを維持したまま、ステージ22が保持する試料Wを搬出入することができる。このため、走査型電子顕微鏡SEMは、試料Wを搬出入するたびに真空領域VSPを新たに形成しなくてもよくなる。つまり、走査型電子顕微鏡SEMは、試料Wを搬出入する前にビーム通過空間SPb1からSPb3を一旦大気圧空間に戻し、試料Wを搬出入した後にビーム通過空間SPb1からSPb3を再度排気して真空空間にしなくてもよくなる。その結果、走査型電子顕微鏡SEMは、試料Wを搬出入するたびに真空領域VSPを新たに形成する必要がある比較例の走査型電子顕微鏡と比較して、真空領域VSPの形成に必要な時間の分だけ、試料Wの計測に要する時間を短くすることができる。つまり、走査型電子顕微鏡SEMのスループットが向上する。 In this way, the scanning electron microscope SEM can carry in and out the sample W held by the stage 22 while maintaining the vacuum region VSP. Therefore, the scanning electron microscope SEM does not have to newly form a vacuum region VSP each time the sample W is carried in and out. That is, in the scanning electron microscope SEM, the beam passing spaces SPb1 to SPb3 are once returned to the atmospheric pressure space before the sample W is carried in and out, and after the sample W is carried in and out, the beam passing spaces SPb1 to SPb3 are exhausted again to create a vacuum. It doesn't have to be a space. As a result, the scanning electron microscope SEM requires the time required to form the vacuum region VSP as compared with the scanning electron microscope of the comparative example in which the vacuum region VSP needs to be newly formed each time the sample W is carried in and out. The time required for measuring the sample W can be shortened by the amount of. That is, the throughput of the scanning electron microscope SEM is improved.

(2−3)真空領域VSPを形成していなかったビーム照射装置1が真空領域VSPを新たに形成する動作
続いて、図9(a)から図9(d)を参照しながら、ビーム照射装置1が新たに真空領域VSPを形成する場合に待避部材223を用いて真空領域VSPを維持する動作の流れについて説明する。
(2-3) Operation in which the beam irradiator 1 that did not form the vacuum region VSP newly forms the vacuum region VSP Subsequently, the beam irradiator with reference to FIGS. 9 (a) to 9 (d). The flow of the operation of maintaining the vacuum region VSP by using the shunting member 223 when 1 newly forms the vacuum region VSP will be described.

真空領域VSPを新たに形成する動作は、例えば、ステージ22が保持している試料Wの状態の計測を新たに開始する際に行われる。具体的には、真空領域VSPを新たに形成する動作は、例えば、試料Wの状態を計測するために電子ビームEBの照射が開始される前に行われる。 The operation of newly forming the vacuum region VSP is performed, for example, when the measurement of the state of the sample W held by the stage 22 is newly started. Specifically, the operation of newly forming the vacuum region VSP is performed, for example, before the irradiation of the electron beam EB is started in order to measure the state of the sample W.

本実施形態では、ビーム照射装置1は、待避状態において真空領域VSPを新たに形成する。ビーム照射装置1は、待避部材223と対向した状態において真空領域VSPを新たに形成する。ビーム照射装置1は、待避部材223との間に真空領域VSPを新たに形成する。言い換えれば、ビーム照射装置1は、非待避状態において真空領域VSPを新たに形成しなくてもよい。ビーム照射装置1は、試料Wと対向した状態において真空領域VSPを新たに形成しなくてもよい。ビーム照射装置1は、試料Wとの間に真空領域VSPを新たに形成しなくてもよい。このため、図9(a)に示すようにビーム照射装置1が真空領域VSPの形成を開始する前にビーム照射装置1が非待避状態にある場合には、ステージ駆動系23は、XY平面に沿ってステージ22を移動して、図9(b)に示すように、ビーム照射装置1の状態を、非待避状態から待避状態へと切り替える。一方で、ビーム照射装置1が真空領域VSPの形成を開始する前にビーム照射装置1が既に待避状態にある場合には、ステージ駆動系23は、ステージ22を移動させなくてもよい。 In the present embodiment, the beam irradiation device 1 newly forms the vacuum region VSP in the shunting state. The beam irradiation device 1 newly forms a vacuum region VSP in a state of facing the shunting member 223. The beam irradiation device 1 newly forms a vacuum region VSP with the retreat member 223. In other words, the beam irradiation device 1 does not have to newly form the vacuum region VSP in the non-evacuated state. The beam irradiation device 1 does not have to newly form the vacuum region VSP in a state facing the sample W. The beam irradiation device 1 does not have to newly form a vacuum region VSP with the sample W. Therefore, as shown in FIG. 9A, when the beam irradiation device 1 is in the non-shelter state before the beam irradiation device 1 starts forming the vacuum region VSP, the stage drive system 23 is placed on the XY plane. The stage 22 is moved along the stage 22 to switch the state of the beam irradiation device 1 from the non-evacuated state to the evacuated state as shown in FIG. 9B. On the other hand, if the beam irradiation device 1 is already in the shunting state before the beam irradiation device 1 starts forming the vacuum region VSP, the stage drive system 23 does not have to move the stage 22.

その後、図9(c)に示すように、ビーム照射装置1は、真空領域VSPを新たに形成する。具体的には、間隔調整系14及びステージ駆動系23の少なくとも一方を用いて、ビーム照射装置1の射出面121LSと待避部材223の上面ESとの間隔Dを所望間隔D_targetとする。その後、真空ポンプ51は、ビーム通過空間SPb1からSPb3を排気して減圧する。更に、真空ポンプ52は、ビーム通過空間SPb3の周囲の空間を排気して減圧する。その結果、ビーム照射装置1(特に、差動排気系12)は、差動排気によって待避部材223との間に真空領域VSPを形成することができる。尚、ビーム照射装置1の射出面121LSと待避部材223の上面ESとの間隔Dを所望間隔D_targetに設定する動作の前に真空ポンプ51によるビーム通過空間SPb1からSPb3の排気・減圧動作を開始してもよく、これら両動作を並行させてもよい。 After that, as shown in FIG. 9C, the beam irradiation device 1 newly forms a vacuum region VSP. Specifically, using at least one of the interval adjusting system 14 and the stage drive system 23, the interval D between the injection surface 121LS of the beam irradiation device 1 and the upper surface ES of the shunting member 223 is set as the desired interval D_taget. After that, the vacuum pump 51 exhausts SPb3 from the beam passing space SPb1 to reduce the pressure. Further, the vacuum pump 52 exhausts the space around the beam passing space SPb3 to reduce the pressure. As a result, the beam irradiation device 1 (particularly, the differential exhaust system 12) can form a vacuum region VSP with the shunting member 223 by the differential exhaust. Before the operation of setting the distance D between the injection surface 121LS of the beam irradiation device 1 and the upper surface ES of the relief member 223 to the desired distance D_taget, the exhaust / depressurization operation of the beam passing space SPb1 to SPb3 by the vacuum pump 51 is started. Both of these operations may be performed in parallel.

真空領域VSPが新たに形成された後、ステージ駆動系23は、XY平面に沿ってステージ22を移動して、図9(d)に示すように、ビーム照射装置1の状態を、待避状態から非待避状態へと切り替える。この際、上述したように、間隔調整系14及びステージ駆動系23の少なくとも一方は、真空領域VSPが適切に維持されるようにZ軸方向におけるステージ22に対するビーム照射装置1の相対位置を調整してもよい。その結果、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる前後において、真空領域VSPが維持される。つまり、ビーム照射装置1は、真空領域VSPを試料W及び待避部材223の少なくとも一方との間に形成し続けたまま、ステージ22に対して移動する。このため、待避部材223に面するように形成された真空領域VSPは、待避部材223から試料Wへと移動するように、ステージ22に対して相対的に移動する。 After the vacuum region VSP is newly formed, the stage drive system 23 moves the stage 22 along the XY plane, and as shown in FIG. 9D, changes the state of the beam irradiation device 1 from the shunting state. Switch to non-shelter state. At this time, as described above, at least one of the interval adjusting system 14 and the stage driving system 23 adjusts the relative position of the beam irradiation device 1 with respect to the stage 22 in the Z-axis direction so that the vacuum region VSP is appropriately maintained. You may. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state. That is, the beam irradiator 1 moves with respect to the stage 22 while continuing to form the vacuum region VSP between the sample W and at least one of the shunting members 223. Therefore, the vacuum region VSP formed so as to face the shunting member 223 moves relative to the stage 22 so as to move from the shunting member 223 to the sample W.

その後、ビーム照射装置1の状態が非待避状態へと変わった後に、走査型電子顕微鏡SEMは、試料Wに電子ビームEBを照射して試料Wの状態を計測する。つまり、ビーム照射装置1は、試料Wとの間に形成している真空領域VSPを介して試料Wに電子ビームEBを照射する。 Then, after the state of the beam irradiating device 1 changes to the non-reserved state, the scanning electron microscope SEM irradiates the sample W with the electron beam EB and measures the state of the sample W. That is, the beam irradiation device 1 irradiates the sample W with the electron beam EB via the vacuum region VSP formed between the beam irradiation device 1 and the sample W.

このように、走査型電子顕微鏡SEMは、電子ビーム照射装置1と待避部材223との間に真空領域VSPを新たに形成すると共に、当該新たに形成した真空領域VSPを維持したまま待避部材223から試料Wへと移動させることができる。つまり、走査型電子顕微鏡SEMは、試料Wの状態の計測を開始するために真空領域VSPを新たに形成する際に、電子ビーム照射装置1と待避部材223との間の空間を、真空領域VSPを新たに形成するための空間に設定することができる。このため、走査型電子顕微鏡SEMは、電子ビーム照射装置1と試料Wとの間に真空領域VSPを新たに形成しなくてもよくなる。つまり、走査型電子顕微鏡SEMは、電子ビーム照射装置1と試料Wとの間の空間を、真空領域VSPを新たに形成するための空間に設定しなくてもよくなる。このため、走査型電子顕微鏡SEMは、真空領域VSPの新たな形成が試料Wに与える影響を抑制しながら、真空領域VSPを新たに形成することができる。例えば、ある物体上において真空領域VSPが新たに形成されると、当該物体に面する空間の圧力が急激に減少していく。このため、物体の温度(特に、物体のうち圧力が減少していく空間に面する部分の温度)が変動する可能性がある。物体の温度の変動は、物体の熱変形につながる可能性がある。物体の熱変形は、物体の状態の計測精度を悪化させる可能性がある。このため、仮に電子ビーム照射装置1と試料Wとの間に真空領域VSPが新たに形成されると、試料Wが熱変形して試料Wの状態の計測精度が悪化する可能性がある。しかるに、本実施形態では、電子ビーム照射装置1と待避部材223との間に真空領域VSPが新たに形成される。このため、真空領域VSPの新たな形成に起因した試料Wの熱変形が抑制される。このため、走査型電子顕微鏡SEMは、試料Wの状態を相対的に高い精度で計測することができる。 In this way, the scanning electron microscope SEM newly forms a vacuum region VSP between the electron beam irradiation device 1 and the retreat member 223, and from the retreat member 223 while maintaining the newly formed vacuum region VSP. It can be moved to sample W. That is, when the scanning electron microscope SEM newly forms the vacuum region VSP in order to start the measurement of the state of the sample W, the space between the electron beam irradiation device 1 and the retreat member 223 is created in the vacuum region VSP. Can be set as a space for newly forming. Therefore, in the scanning electron microscope SEM, it is not necessary to newly form a vacuum region VSP between the electron beam irradiation device 1 and the sample W. That is, in the scanning electron microscope SEM, it is not necessary to set the space between the electron beam irradiation device 1 and the sample W as a space for newly forming the vacuum region VSP. Therefore, the scanning electron microscope SEM can newly form the vacuum region VSP while suppressing the influence of the new formation of the vacuum region VSP on the sample W. For example, when a vacuum region VSP is newly formed on an object, the pressure in the space facing the object decreases sharply. Therefore, the temperature of the object (particularly, the temperature of the part of the object facing the space where the pressure decreases) may fluctuate. Fluctuations in the temperature of an object can lead to thermal deformation of the object. Thermal deformation of an object can deteriorate the measurement accuracy of the state of the object. Therefore, if a vacuum region VSP is newly formed between the electron beam irradiation device 1 and the sample W, the sample W may be thermally deformed and the measurement accuracy of the state of the sample W may be deteriorated. However, in the present embodiment, the vacuum region VSP is newly formed between the electron beam irradiation device 1 and the shunting member 223. Therefore, the thermal deformation of the sample W due to the new formation of the vacuum region VSP is suppressed. Therefore, the scanning electron microscope SEM can measure the state of the sample W with relatively high accuracy.

但し、走査型電子顕微鏡SEMにおいて許容される計測精度によっては、ビーム照射装置1は、待避状態において真空領域VSPを新たに形成してもよい。ビーム照射装置1は、試料Wと対向した状態において真空領域VSPを新たに形成してもよい。ビーム照射装置1は、試料Wとの間に真空領域VSPを新たに形成してもよい。 However, depending on the measurement accuracy allowed in the scanning electron microscope SEM, the beam irradiation device 1 may newly form the vacuum region VSP in the shunting state. The beam irradiation device 1 may newly form a vacuum region VSP in a state facing the sample W. The beam irradiation device 1 may newly form a vacuum region VSP with the sample W.

(3)変形例
続いて、走査型電子顕微鏡SEMの変形例について説明する。
(3) Modification Example Next, a modification of the scanning electron microscope SEM will be described.

(3−1)第1変形例
はじめに、第1変形例における走査型電子顕微鏡SEMaについて説明する。走査型電子顕微鏡SEMaは、上述した走査型電子顕微鏡SEMと比較して、ステージ22に代えてステージ22aを備えているという点において異なっている。走査型電子顕微鏡SEMaのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図10を参照しながら、第1変形例のステージ22aについて説明する。図10は、第1変形例のステージ22aの構造を示す断面図である。
(3-1) First Modified Example First , the scanning electron microscope SEMa in the first modified example will be described. The scanning electron microscope SEMa differs from the scanning electron microscope SEM described above in that it includes a stage 22a instead of the stage 22. Other structures of the scanning electron microscope SEMa may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the stage 22a of the first modification will be described with reference to FIG. FIG. 10 is a cross-sectional view showing the structure of the stage 22a of the first modification.

図10に示すように、ステージ22aは、上述したステージ22と比較して、待避部材223の上面ESの少なくとも一部に、少なくとも一つのマーク領域MAが形成されているという点で異なる。ステージ22aのその他の構造は、ステージ22と同一であってもよい。 As shown in FIG. 10, the stage 22a is different from the stage 22 described above in that at least one mark region MA is formed on at least a part of the upper surface ES of the shunting member 223. Other structures of the stage 22a may be the same as the stage 22.

マーク領域MAには、少なくとも一つのマークMが形成されている。マークMは、例えば、図11(a)に示すように、X軸方向に沿って延びる長手形状のラインマークMXが、Y軸方向に沿って所望のピッチΛXで並ぶように形成された格子マークM1を含んでいてもよい。マークMは、例えば、図11(b)に示すように、Y軸方向に沿って延びる長手形状のラインマークMYが、X軸方向に沿って所望のピッチΛYで並ぶように形成された格子マークM2を含んでいてもよい。マークMは、例えば、図11(c)に示すように、X軸方向及びY軸方向の双方に交差する第1方向に沿って延びる長手形状のラインマークMLが、第1方向に交差する第2方向に沿って所望のピッチΛLで並ぶように形成された格子マークM3を含んでいてもよい。もちろん、マークMは、図11(a)から図11(c)に示すマークとは異なるマークを含んでいてもよい。 At least one mark M is formed in the mark region MA. The mark M is, for example, as shown in FIG. 11A, a grid mark formed so that longitudinal line marks MX extending along the X-axis direction are arranged at a desired pitch ΛX along the Y-axis direction. It may contain M1. The mark M is, for example, as shown in FIG. 11B, a grid mark formed so that long line marks MY extending along the Y-axis direction are arranged at a desired pitch ΛY along the X-axis direction. It may contain M2. The mark M is, for example, as shown in FIG. 11 (c), a line mark ML having a longitudinal shape extending along a first direction intersecting both the X-axis direction and the Y-axis direction intersects in the first direction. It may include grid marks M3 formed so as to line up at a desired pitch ΛL along two directions. Of course, the mark M may include a mark different from the marks shown in FIGS. 11 (a) to 11 (c).

マークMは、走査型電子顕微鏡SEMaの動作状態を設定する(言い換えれば、較正する、キャリブレーションする又は調整する)ために用いられる。そのため、待避部材223を基準板と称してもよい。具体的には、ビーム照射装置1は、真空領域VSPを介してマークMに対して電子ビームEBを照射する。更に、ビーム照射装置1は、電子検出器116を用いて、マークMに対する電子ビームEBの照射によって生じた電子(例えば、反射電子及び散乱電子の少なくとも一方)を検出する。制御装置4は、電子検出器116の検出結果に基づいて、走査型電子顕微鏡SEMaの特性を特定する。制御装置4は、特定した走査型電子顕微鏡SEMaの特性に基づいて、走査型電子顕微鏡SEMaの動作状態を設定する。例えば、制御装置4は、電子検出器116の検出結果に基づいて、ビーム照射装置1が照射する電子ビームEBの特性(例えば、強度、スポット径及びフォーカス位置の少なくとも一つ)を特定し、特定した電子ビームEBの状態に基づいて、適切な特性の電子ビームEBを照射するようにビーム照射装置1の動作状態を設定してもよい。例えば、制御装置4は、電子検出器116の検出結果に基づいて、ビーム照射装置1とステージ22aとの相対位置を特定し、特定した相対位置に基づいてビーム照射装置1とステージ22aとの位置合わせを行ってもよい。例えば、制御装置4は、電子検出器116の検出結果に基づいて、ビーム照射装置1が形成している真空領域VSPの特性(例えば、真空度及び形成位置の少なくとも一つ)を特定し、特定した真空領域VSPの状態に基づいて、適切な特性の真空領域VSPを形成するように真空領域VSPの形成に関連する装置(例えば、ビーム照射装置1、間隔調整系14、ステージ駆動系23及びポンプ系5の少なくとも一つ)の動作状態を設定してもよい。 The mark M is used to set (in other words, calibrate, calibrate, or adjust) the operating state of the scanning electron microscope SEMa. Therefore, the shunting member 223 may be referred to as a reference plate. Specifically, the beam irradiating device 1 irradiates the mark M with the electron beam EB via the vacuum region VSP. Further, the beam irradiation device 1 uses the electron detector 116 to detect electrons (for example, at least one of reflected electrons and scattered electrons) generated by irradiation of the mark M with the electron beam EB. The control device 4 identifies the characteristics of the scanning electron microscope SEMa based on the detection result of the electron detector 116. The control device 4 sets the operating state of the scanning electron microscope SEMa based on the characteristics of the identified scanning electron microscope SEMa. For example, the control device 4 identifies and specifies the characteristics (for example, at least one of the intensity, the spot diameter, and the focus position) of the electron beam EB irradiated by the beam irradiation device 1 based on the detection result of the electron detector 116. The operating state of the beam irradiation device 1 may be set so as to irradiate the electron beam EB having appropriate characteristics based on the state of the electron beam EB. For example, the control device 4 specifies the relative position between the beam irradiation device 1 and the stage 22a based on the detection result of the electron detector 116, and the position between the beam irradiation device 1 and the stage 22a based on the specified relative position. You may make adjustments. For example, the control device 4 identifies and specifies the characteristics of the vacuum region VSP formed by the beam irradiation device 1 (for example, at least one of the degree of vacuum and the formation position) based on the detection result of the electron detector 116. Devices related to the formation of the vacuum region VSP so as to form the vacuum region VSP with appropriate characteristics based on the state of the vacuum region VSP (for example, beam irradiation device 1, interval adjustment system 14, stage drive system 23 and pump). The operating state of at least one of the systems 5) may be set.

マークMが待避部材223に形成されているがゆえに、走査型電子顕微鏡SEMaの動作状態を設定するために、走査型電子顕微鏡SEMaは、待避状態にあるビーム照射装置1を用いてマークMに電子ビームEBを照射する。つまり、ビーム照射装置1は、待避状態においてマークMに電子ビームEBを照射する。ビーム照射装置1は、待避部材223と対向した状態においてマークMに電子ビームEBを照射する。ビーム照射装置1は、待避部材223との間に真空領域VSPが形成された状態においてマークMに電子ビームEBを照射する。このため、図12(a)に示すように走査型電子顕微鏡SEMaの動作状態の設定が開始される前にビーム照射装置1が非待避状態にある場合には、ステージ駆動系23は、XY平面に沿ってステージ22を移動して、図12(b)に示すように、ビーム照射装置1の状態を、非待避状態から待避状態へと切り替える。この際、ビーム照射装置1が試料Wとの間に真空領域VSPを既に形成している場合には、上述したように、間隔調整系14及びステージ駆動系23の少なくとも一方は、真空領域VSPが適切に維持されるようにZ軸方向におけるステージ22aに対するビーム照射装置1の相対位置を調整してもよい。その結果、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる前後において、真空領域VSPが維持される。つまり、ビーム照射装置1は、真空領域VSPを試料W及び待避部材223の少なくとも一方との間に形成し続けたまま、ステージ22aに対して移動する。一方で、走査型電子顕微鏡SEMaの動作状態の設定が開始される前にビーム照射装置1が既に待避状態にある場合には、ステージ駆動系23は、ステージ22aを移動させなくてもよい。 Since the mark M is formed on the retracting member 223, in order to set the operating state of the scanning electron microscope SEMa, the scanning electron microscope SEMa uses the beam irradiation device 1 in the retracting state to electron the mark M. Irradiate the beam EB. That is, the beam irradiating device 1 irradiates the mark M with the electron beam EB in the shunting state. The beam irradiating device 1 irradiates the mark M with the electron beam EB in a state of facing the shunting member 223. The beam irradiating device 1 irradiates the mark M with the electron beam EB in a state where the vacuum region VSP is formed between the beam irradiating device 1 and the shunting member 223. Therefore, as shown in FIG. 12A, when the beam irradiation device 1 is in the non-shelter state before the setting of the operating state of the scanning electron microscope SEMa is started, the stage drive system 23 is in the XY plane. The stage 22 is moved along the line, and as shown in FIG. 12B, the state of the beam irradiation device 1 is switched from the non-evacuated state to the evacuated state. At this time, when the beam irradiation device 1 has already formed the vacuum region VSP with the sample W, as described above, at least one of the interval adjusting system 14 and the stage drive system 23 has the vacuum region VSP. The relative position of the beam irradiator 1 with respect to the stage 22a in the Z-axis direction may be adjusted so as to be properly maintained. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state. That is, the beam irradiation device 1 moves with respect to the stage 22a while continuing to form the vacuum region VSP between the sample W and at least one of the shunting members 223. On the other hand, if the beam irradiation device 1 is already in the shunting state before the setting of the operating state of the scanning electron microscope SEMa is started, the stage drive system 23 does not have to move the stage 22a.

その後、図12(c)に示すように、マーク領域MAに対して電子ビームEBを照射可能な位置にビーム照射装置1が位置した後に、ビーム照射装置1は、マーク領域MAに電子ビームEBを照射する。つまり、ビーム照射装置1は、マーク領域MAに形成されたマークMに電子ビームEBを照射する。この際、ビーム照射装置1は、マーク領域MAに面する真空領域VSPを介してマークMに電子ビームEBを照射する。その後、制御装置4は、電子検出器116の検出結果に基づいて、走査型電子顕微鏡SEMaの動作状態を設定する。走査型電子顕微鏡SEMaの動作状態が設定される設定期間中は、図12(c)に示すように、ビーム照射装置1の状態は、待避状態のまま維持される。その結果、設定間中は、図12(c)に示すように、ビーム照射装置1は、待避部材223との間に(特に、マーク領域MAとの間に)真空領域VSPを形成し続ける。但し、マークMに電子ビームEBが照射されるビーム照射期間以外の期間中は、ビーム照射装置1は、必ずしも待避部材223(特に、マーク領域MA)に対向していなくてもよい。例えば、マークMに対する電子ビームEBの照射によって生じた電子の電子検出器116による検出がビーム照射期間中に完了していれば、電子検出器116の検出結果に基づいて制御装置4が走査型電子顕微鏡SEMaの動作状態を実際に設定する期間中は、ビーム照射装置1は、待避部材223に対向していなくてもよい。このため、設定期間のうちのビーム照射期間中は、ビーム照射装置1の状態が待避状態のまま維持される一方で、設定期間のうちのビーム照射期間以外の期間の少なくとも一部において、ビーム照射装置1の状態が非待避状態となっていてもよい。 Then, as shown in FIG. 12 (c), after the beam irradiation device 1 is positioned at a position where the electron beam EB can be irradiated to the mark region MA, the beam irradiation device 1 places the electron beam EB in the mark region MA. Irradiate. That is, the beam irradiating device 1 irradiates the mark M formed in the mark region MA with the electron beam EB. At this time, the beam irradiating device 1 irradiates the mark M with the electron beam EB via the vacuum region VSP facing the mark region MA. After that, the control device 4 sets the operating state of the scanning electron microscope SEMa based on the detection result of the electron detector 116. During the setting period in which the operating state of the scanning electron microscope SEMa is set, the state of the beam irradiating device 1 is maintained in the shunting state as shown in FIG. 12 (c). As a result, during the setting, as shown in FIG. 12 (c), the beam irradiation device 1 continues to form a vacuum region VSP with the shunting member 223 (particularly with the mark region MA). However, during the period other than the beam irradiation period in which the electron beam EB is irradiated to the mark M, the beam irradiation device 1 does not necessarily have to face the shunting member 223 (particularly, the mark region MA). For example, if the detection of the electrons generated by the irradiation of the mark M with the electron beam EB by the electron detector 116 is completed during the beam irradiation period, the control device 4 will perform the scanning electron based on the detection result of the electron detector 116. During the period in which the operating state of the microscope SEMa is actually set, the beam irradiation device 1 does not have to face the relief member 223. Therefore, while the state of the beam irradiation device 1 is maintained in the shunting state during the beam irradiation period in the set period, the beam irradiation is performed in at least a part of the set period other than the beam irradiation period. The state of the device 1 may be a non-shelter state.

その後、走査型電子顕微鏡SEMaの動作状態の設定が完了した後(或いは、マークMへの電子ビームEBの照射が完了した後)、ステージ駆動系23は、XY平面に沿ってステージ22aを移動して、図12(d)に示すように、ビーム照射装置1の状態を、待避状態から非待避状態へと切り替える。この際、上述したように、間隔調整系14及びステージ駆動系23の少なくとも一方は、真空領域VSPが適切に維持されるようにZ軸方向におけるステージ22aに対するビーム照射装置1の相対位置を調整してもよい。その結果、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる前後において、真空領域VSPが維持される。つまり、ビーム照射装置1は、真空領域VSPを試料W及び待避部材223の少なくとも一方との間に形成し続けたまま、ステージ22aに対して移動する。このため、待避部材223に面するように形成された真空領域VSPは、待避部材223から試料Wへと移動するように、ステージ22aに対して相対的に移動する。 After that, after the setting of the operating state of the scanning electron microscope SEMa is completed (or after the irradiation of the electron beam EB to the mark M is completed), the stage drive system 23 moves the stage 22a along the XY plane. Then, as shown in FIG. 12D, the state of the beam irradiation device 1 is switched from the evacuated state to the non-evacuated state. At this time, as described above, at least one of the interval adjusting system 14 and the stage drive system 23 adjusts the relative position of the beam irradiation device 1 with respect to the stage 22a in the Z-axis direction so that the vacuum region VSP is appropriately maintained. You may. As a result, the vacuum region VSP is maintained before and after the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state. That is, the beam irradiation device 1 moves with respect to the stage 22a while continuing to form the vacuum region VSP between the sample W and at least one of the shunting members 223. Therefore, the vacuum region VSP formed so as to face the shunting member 223 moves relative to the stage 22a so as to move from the shunting member 223 to the sample W.

その後、ビーム照射装置1の状態が非待避状態へと変わった後に、走査型電子顕微鏡SEMaは、試料Wに電子ビームEBを照射して試料Wの状態を計測する。つまり、ビーム照射装置1は、試料Wとの間に形成している真空領域VSPを介して試料Wに電子ビームEBを照射する。この際、走査型電子顕微鏡SEMaの動作状態が既に設定済みであるため、走査型電子顕微鏡SEMaは、試料Wの状態をより適切に計測することができる。 Then, after the state of the beam irradiating device 1 changes to the non-reserved state, the scanning electron microscope SEMa irradiates the sample W with the electron beam EB and measures the state of the sample W. That is, the beam irradiation device 1 irradiates the sample W with the electron beam EB via the vacuum region VSP formed between the beam irradiation device 1 and the sample W. At this time, since the operating state of the scanning electron microscope SEMa has already been set, the scanning electron microscope SEMa can more appropriately measure the state of the sample W.

このように、走査型電子顕微鏡SEMaは、真空領域VSPを維持したまま、走査型電子顕微鏡SEMaの動作状態を設定することができる。このため、走査型電子顕微鏡SEMaは、走査型電子顕微鏡SEMaの動作状態を設定するたびに真空領域VSPを新たに形成しなくてもよくなる。つまり、走査型電子顕微鏡SEMaは、走査型電子顕微鏡SEMaの動作状態を設定する前にビーム通過空間SPb1からSPb3を一旦大気圧空間に戻してビーム照射装置1をマーク領域MAに移動させ、その後マーク領域MAに電子ビームEBを照射する前にビーム通過空間SPb1からSPb3を再度排気して真空空間にしなくてもよくなる。その結果、走査型電子顕微鏡SEMaは、走査型電子顕微鏡SEMaの動作状態を設定するたびに真空領域VSPを新たに形成する必要がある比較例の走査型電子顕微鏡と比較して、真空領域VSPの形成に必要な時間の分だけ、走査型電子顕微鏡SEMaの動作状態の設定に要する時間を短くすることができる。つまり、走査型電子顕微鏡SEMaのスループットが向上する。 In this way, the scanning electron microscope SEMa can set the operating state of the scanning electron microscope SEMa while maintaining the vacuum region VSP. Therefore, the scanning electron microscope SEMa does not have to newly form the vacuum region VSP every time the operating state of the scanning electron microscope SEMa is set. That is, in the scanning electron microscope SEMa, before setting the operating state of the scanning electron microscope SEMa, the beam passing spaces SPb1 to SPb3 are once returned to the atmospheric pressure space, the beam irradiation device 1 is moved to the mark region MA, and then the mark is marked. It is not necessary to exhaust the beam passing spaces SPb1 to SPb3 again to create a vacuum space before irradiating the region MA with the electron beam EB. As a result, the scanning electron microscope SEMa has a vacuum region VSP as compared with the scanning electron microscope of the comparative example in which a vacuum region VSP needs to be newly formed each time the operating state of the scanning electron microscope SEMa is set. The time required to set the operating state of the scanning electron microscope SEMa can be shortened by the amount of time required for formation. That is, the throughput of the scanning electron microscope SEMa is improved.

尚、マークMは待避部材223と異なる部材に形成されていてもよい。例えば、外周部材222の上面OSにマークMが設けられていてもよい。また、待避部材223の上面ESを位置計測装置15の基準面として用いてもよい。 The mark M may be formed on a member different from the shunting member 223. For example, the mark M may be provided on the upper surface OS of the outer peripheral member 222. Further, the upper surface ES of the shunting member 223 may be used as a reference surface of the position measuring device 15.

(3−2)第2変形例
続いて、第2変形例における走査型電子顕微鏡SEMbについて説明する。走査型電子顕微鏡SEMbは、上述した走査型電子顕微鏡SEMと比較して、ステージ22に代えてステージ22bを備えているという点において異なっている。走査型電子顕微鏡SEMbのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図13(a)及び図13(b)を参照しながら、第2変形例のステージ22bについて説明する。図13(a)は、第2変形例のステージ22bの構造を示す断面図であり、図13(b)は、第2変形例のステージ22bの構造を示す平面図である。
(3-2) Second Modified Example Next, the scanning electron microscope SEMb in the second modified example will be described. The scanning electron microscope SEMb is different from the scanning electron microscope SEM described above in that the stage 22b is provided instead of the stage 22. Other structures of the scanning electron microscope SEMb may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the stage 22b of the second modification will be described with reference to FIGS. 13 (a) and 13 (b). FIG. 13A is a cross-sectional view showing the structure of the stage 22b of the second modification, and FIG. 13B is a plan view showing the structure of the stage 22b of the second modification.

図13(a)及び図13(b)に示すように、ステージ22bは、上述したステージ22と比較して、保持部材221の保持面HSに排気口2231bが形成されているという点で異なる。ステージ22bのその他の構造は、ステージ22と同一であってもよい。 As shown in FIGS. 13 (a) and 13 (b), the stage 22b is different from the above-mentioned stage 22 in that the exhaust port 2231b is formed on the holding surface HS of the holding member 221. Other structures of stage 22b may be the same as stage 22.

排気口2231bは、保持部材221の保持面HSの外縁付近に形成されている。具体的には、上述したように、XY平面に沿った方向において、保持面HSのサイズ(例えば、径)は、試料Wのサイズ(例えば、径)よりも大きい。このため、保持部材221が試料Wを保持すると、保持面HSの外縁付近において、試料Wと外周部材222とが密着することはない。つまり、保持部材221は、試料Wと外周部材222との間に(つまり、試料Wの表面WSuと外周部材222の上面OSとの間に)空間を確保した状態で試料Wを保持する。排気口2231bは、試料Wと外周部材222との間の空間のうち、試料Wと待避部材223との間の空間(間隙又は空隙と称してもよい)SPgの少なくとも一部に面するように形成される。保持面HSのうち空間SPgに面する部分は、試料Wを実際に保持することはない。このため、排気口2231bは、保持面HSのうち試料Wを実際に保持しない部分の少なくとも一部(つまり、空間SPgに面する部分)に形成される。上述したように待避部材223がXY平面に沿った一の方向において保持部材221に隣接することから、排気口2231bは、保持面HSのうち待避部材223が存在する一の方向の外縁付近に形成される。 The exhaust port 2231b is formed near the outer edge of the holding surface HS of the holding member 221. Specifically, as described above, the size (for example, diameter) of the holding surface HS is larger than the size (for example, diameter) of the sample W in the direction along the XY plane. Therefore, when the holding member 221 holds the sample W, the sample W and the outer peripheral member 222 do not come into close contact with each other in the vicinity of the outer edge of the holding surface HS. That is, the holding member 221 holds the sample W in a state where a space is secured between the sample W and the outer peripheral member 222 (that is, between the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222). The exhaust port 2231b faces at least a part of the space (which may be referred to as a gap or a gap) SPg between the sample W and the shunting member 223 in the space between the sample W and the outer peripheral member 222. It is formed. The portion of the holding surface HS facing the space SPg does not actually hold the sample W. Therefore, the exhaust port 2231b is formed in at least a part (that is, a part facing the space SPg) of the holding surface HS that does not actually hold the sample W. Since the shunting member 223 is adjacent to the holding member 221 in one direction along the XY plane as described above, the exhaust port 2231b is formed near the outer edge of the holding surface HS in one direction in which the shunting member 223 exists. Will be done.

排気口2231bは、保持面HSにおいて離散的な配列パターンで離散的に配列するように、複数形成される。具体的には、排気口2231bは、保持面HSにおいて、空間SPgの分布パターンに従った配列パターンで配列するように、複数形成される。図13(b)に示す例では、平面視において円形の形状を有する試料Wと円形の収容空間SPwを規定する待避部材223との間の空間SPgが平面視において円周状に分布しているため、排気口2231bは、この円周に沿った離散的な配列パターンで配列するように、複数形成されている。複数の排気口2231bの円周に沿った間隔は等間隔であってもよいし、不等間隔であってもよい。但し、複数の排気口2231bが形成されていなくてもよい。例えば、単一の排気口2231bが形成されていてもよい。例えば、排気口2231bは、保持面HSにおいて連続的な分布パターンで連続的に分布するように形成されていてもよい。例えば、排気口2231bは、保持面HSにおいて連続的に分布する排気溝として形成されていてもよい。一例として、排気口2231bは環状であってもよい。 A plurality of exhaust ports 2231b are formed so as to be discretely arranged in a discrete arrangement pattern on the holding surface HS. Specifically, a plurality of exhaust ports 2231b are formed on the holding surface HS so as to be arranged in an arrangement pattern according to the distribution pattern of the space SPg. In the example shown in FIG. 13B, the space SPg between the sample W having a circular shape in a plan view and the retreat member 223 defining the circular accommodation space SPw is distributed in a circumferential shape in a plan view. Therefore, a plurality of exhaust ports 2231b are formed so as to be arranged in a discrete arrangement pattern along the circumference. The intervals along the circumference of the plurality of exhaust ports 2231b may be equal intervals or unequal intervals. However, it is not necessary that a plurality of exhaust ports 2231b are formed. For example, a single exhaust port 2231b may be formed. For example, the exhaust port 2231b may be formed so as to be continuously distributed in a continuous distribution pattern on the holding surface HS. For example, the exhaust port 2231b may be formed as an exhaust groove that is continuously distributed on the holding surface HS. As an example, the exhaust port 2231b may be annular.

排気口2231bには、配管2232bを介して、ポンプ系5が備える真空ポンプ53が連結されている。但し、排気口2231bには、配管2232bを介して、ポンプ系5が備える真空ポンプ51及び52の少なくとも一方が連結されていてもよい。真空ポンプ53は、空間SPgを排気して減圧可能である。尚、真空ポンプ53(或いは真空ポンプ51及び52の少なくとも一方)を排気装置と称してもよい。 A vacuum pump 53 included in the pump system 5 is connected to the exhaust port 2231b via a pipe 2232b. However, at least one of the vacuum pumps 51 and 52 included in the pump system 5 may be connected to the exhaust port 2231b via the pipe 2232b. The vacuum pump 53 can exhaust the space SPg to reduce the pressure. The vacuum pump 53 (or at least one of the vacuum pumps 51 and 52) may be referred to as an exhaust device.

真空ポンプ53は、ビーム照射装置1の状態が待避状態から非待避状態へと又は非待避状態から待避状態へと切り替えられる期間の少なくとも一部において、空間SPgを排気する。特に、図14に示すように、真空ポンプ53は、ビーム照射装置1の状態が中間状態にある期間の少なくとも一部において、空間SPgを排気する。具体的には、図14に示すように、真空ポンプ53は、ビーム照射装置1が試料Wと待避部材223との境界に面する(つまり、空間SPgに面する)真空領域VSPを形成する期間の少なくとも一部において、空間SPgを排気する。つまり、真空ポンプ53は、試料Wと待避部材223との境界(つまり、空間SPg)と真空領域VSPの少なくとも一部とがZ軸方向において重なる期間の少なくとも一部において、空間SPgを排気する。 The vacuum pump 53 exhausts the space SPg during at least a part of the period in which the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state or from the non-sheltering state to the shunting state. In particular, as shown in FIG. 14, the vacuum pump 53 exhausts the space SPg during at least a part of the period when the state of the beam irradiation device 1 is in the intermediate state. Specifically, as shown in FIG. 14, in the vacuum pump 53, the period during which the beam irradiation device 1 forms the vacuum region VSP facing the boundary between the sample W and the retreat member 223 (that is, facing the space SPg). At least a part of the space SPg is exhausted. That is, the vacuum pump 53 exhausts the space SPg during at least a part of the period in which the boundary between the sample W and the relief member 223 (that is, the space SPg) and at least a part of the vacuum region VSP overlap in the Z-axis direction.

このとき、真空ポンプ53は、空間SPgのうち少なくとも真空領域VSPに面する又は近傍に位置する少なくとも一部の空間部分を排気する一方で、空間SPgのうち少なくとも真空領域VSPに面していない又は離れている少なくとも他の一部の空間部分を排気しなくてもよい。この場合、例えば、走査型電子顕微鏡SEMは、複数の排気口2231bに夫々対応するように配管2232bに配置された不図示のバルブを制御して、空間SPgのうち少なくとも真空領域VSPに面する又は近傍に位置する少なくとも一部の空間部分に面する排気口2231bを真空ポンプ53に連通する一方で、空間SPgのうち少なくとも真空領域VSPに面していない又は離れている少なくとも他の一部の空間部分に面する排気口2231bを真空ポンプ53から遮断してもよい。つまり、複数の排気口2231bのうち試料Wの表面WSuに沿った方向において真空領域VSPが形成されている範囲内に位置する一の排気口2231bが空間SPgを排気する一方で、複数の排気口2231bのうち試料Wの表面WSuに沿った方向において真空領域VSPが形成されている範囲内に位置しない他の排気口2231bが空間SPgを排気しなくてもよい。この場合、典型的には、試料Wの表面WSuに沿った方向において、空間SPgを排気する一の排気口2231bは、空間SPgを排気しない他の排気口2231bよりも真空領域VSPに近い位置に位置する。 At this time, the vacuum pump 53 exhausts at least a part of the space SPg facing or in the vicinity of the vacuum region VSP, while the vacuum pump 53 does not face at least the vacuum region VSP in the space SPg. It is not necessary to exhaust at least some other spatial parts that are separated. In this case, for example, the scanning electron microscope SEM controls a valve (not shown) arranged in the pipe 2232b so as to correspond to each of the plurality of exhaust ports 2231b so as to face at least the vacuum region VSP in the space SPg. The exhaust port 2231b facing at least a part of the space located in the vicinity communicates with the vacuum pump 53, while at least a part of the space SPg not facing or away from the vacuum region VSP. The exhaust port 2231b facing the portion may be shut off from the vacuum pump 53. That is, one of the plurality of exhaust ports 2231b located within the range where the vacuum region VSP is formed in the direction along the surface WSu of the sample W exhausts the space SPg, while the plurality of exhaust ports are a plurality of exhaust ports. It is not necessary for the other exhaust port 2231b of 2231b, which is not located within the range where the vacuum region VSP is formed in the direction along the surface WSu of the sample W, to exhaust the space SPg. In this case, typically, in the direction along the surface WSu of the sample W, one exhaust port 2231b that exhausts the space SPg is located closer to the vacuum region VSP than the other exhaust port 2231b that does not exhaust the space SPg. To position.

その結果、ビーム照射装置1が中間状態にある場合において、真空領域VSPがより一層適切に維持される。というのも、仮に排気口2231bが形成されていなければ、ビーム照射装置1が中間状態にある場合において、空間SPgに面する真空領域VSPに対して、空間SPgを介して気体が流入する可能性がある。特に、空間SPgが大きくなるほど(例えば、試料Wと待避部材223との間の距離が大きくなるほど)、真空領域VSPに対して、空間SPgを介して気体が流入する可能性が大きくなる。その結果、真空領域VSPの真空度が低下する可能性がある。しかるに、第2変形例では、空間SPgが排気されて減圧されるため、真空領域VSPに対して、空間SPgを介して気体が流入する可能性が相対的に小さくなる。このため、空間SPgを介した気体の流入に起因した真空領域SPの真空度の低下が適切に抑制される。 As a result, the vacuum region VSP is maintained more appropriately when the beam irradiation device 1 is in the intermediate state. This is because if the exhaust port 2231b is not formed, gas may flow into the vacuum region VSP facing the space SPg through the space SPg when the beam irradiation device 1 is in the intermediate state. There is. In particular, the larger the space SPg (for example, the larger the distance between the sample W and the shunting member 223), the greater the possibility that gas will flow into the vacuum region VSP via the space SPg. As a result, the degree of vacuum in the vacuum region VSP may decrease. However, in the second modification, since the space SPg is exhausted and depressurized, the possibility that the gas flows in through the space SPg is relatively small with respect to the vacuum region VSP. Therefore, the decrease in the degree of vacuum in the vacuum region SP due to the inflow of gas through the space SPg is appropriately suppressed.

尚、真空ポンプ53は、ビーム照射装置1の状態が切り替えられない状態、典型的にはビーム照射装置1が待避状態或いはビーム照射装置1が非待避状態である期間の少なくとも一部において、空間SPgを排気してもよい。ここで、真空ポンプ53は、走査型電子顕微鏡SEMの稼働期間の全てにおいて空間SPgを排気してもよい。また、真空ポンプ53は、走査型電子顕微鏡SEMの稼働期間において、試料Wを搬出入する期間を除いて、空間SPgを排気してもよい。 The vacuum pump 53 is a space SPg in a state in which the state of the beam irradiation device 1 cannot be switched, typically at least a part of a period in which the beam irradiation device 1 is in the shunting state or the beam irradiating device 1 is in the non-sheltering state. May be exhausted. Here, the vacuum pump 53 may exhaust the space SPg during the entire operating period of the scanning electron microscope SEM. Further, the vacuum pump 53 may exhaust the space SPg during the operating period of the scanning electron microscope SEM, except for the period during which the sample W is carried in and out.

尚、上述した説明では、排気口2231bが保持部材221の保持面HSに形成されている。しかしながら、排気口2231bは、空間SPgを排気可能な任意の位置に形成されていてもよい。排気口2231bは、空間SPgに面する任意の位置に形成されていてもよい。例えば、図15に示すように、排気口2231bは、待避部材223の内面(つまり、空間SPgに面する面)に形成されていてもよい。 In the above description, the exhaust port 2231b is formed on the holding surface HS of the holding member 221. However, the exhaust port 2231b may be formed at an arbitrary position where the space SPg can be exhausted. The exhaust port 2231b may be formed at an arbitrary position facing the space SPg. For example, as shown in FIG. 15, the exhaust port 2231b may be formed on the inner surface of the shunting member 223 (that is, the surface facing the space SPg).

また、上述した説明では、排気口2231bは、試料Wと外周部材222との間の空間のうち、試料Wと待避部材223との間の空間SPgの少なくとも一部に面するように形成されている。しかしながら、図16に示すように、排気口2231bは、試料Wと外周部材222との間の空間のうち、試料Wと待避部材223との間の空間SPg以外の他の空間SPg’の少なくとも一部に面するように形成されていてもよい。この場合、真空ポンプ53は、ビーム照射装置1の状態が待避状態から非待避状態へと又は非待避状態から待避状態へと切り替えられる期間とは異なる期間の少なくとも一部において、空間SPgを排気してもよい。例えば、真空ポンプ53は、ビーム照射装置1が試料Wと外周部材222との境界に面する真空領域VSPを形成する期間の少なくとも一部において、試料Wと外周部材222との間の空間(特に、試料Wと外周部材222との間の空間のうち、真空領域VSPの少なくとも一部とZ軸方向において重なる空間部分)を排気してもよい。更に、この場合、外周部材222は、待避部材223を備えていなくてもよい。外周部材222が待避部材223を備えていない場合には、上述した待避部材223を利用した動作が行われなくてもよい。 Further, in the above description, the exhaust port 2231b is formed so as to face at least a part of the space SPg between the sample W and the shunting member 223 in the space between the sample W and the outer peripheral member 222. There is. However, as shown in FIG. 16, the exhaust port 2231b is at least one of the spaces SPg'other than the space SPg between the sample W and the shunting member 223 in the space between the sample W and the outer peripheral member 222. It may be formed so as to face the portion. In this case, the vacuum pump 53 exhausts the space SPg for at least a part of a period different from the period in which the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state or from the non-sheltering state to the shunting state. You may. For example, in the vacuum pump 53, the space between the sample W and the outer peripheral member 222 (particularly, in particular) during at least a part of the period in which the beam irradiation device 1 forms the vacuum region VSP facing the boundary between the sample W and the outer peripheral member 222. , A space portion of the space between the sample W and the outer peripheral member 222 that overlaps at least a part of the vacuum region VSP in the Z-axis direction) may be exhausted. Further, in this case, the outer peripheral member 222 does not have to include the shunting member 223. When the outer peripheral member 222 does not include the shunting member 223, the operation using the shunting member 223 described above may not be performed.

(3−3)第3変形例
続いて、第3変形例における走査型電子顕微鏡SEMcについて説明する。走査型電子顕微鏡SEMcは、上述した走査型電子顕微鏡SEMと比較して、ステージ22による試料Wの保持方法が異なるという点において異なっている。走査型電子顕微鏡SEMcのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図17(a)及び図17(b)を参照しながら、第3変形例におけるステージ22による試料Wの保持方法について説明する。図17(a)は、第3変形例においてステージ22に保持される試料Wを示す断面図であり、図17(b)は、第3変形例においてステージ22に保持される試料Wを示す平面図である。
(3-3) Third Modified Example Next, the scanning electron microscope SEMc in the third modified example will be described. The scanning electron microscope SEMc is different from the scanning electron microscope SEM described above in that the method of holding the sample W by the stage 22 is different. Other structures of the scanning electron microscope SEMc may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the method of holding the sample W by the stage 22 in the third modification will be described with reference to FIGS. 17 (a) and 17 (b). FIG. 17A is a cross-sectional view showing the sample W held on the stage 22 in the third modification, and FIG. 17B is a plan view showing the sample W held on the stage 22 in the third modification. It is a figure.

図17(a)及び図17(b)に示すように、第3変形例では、ステージ22は、試料Wと待避部材223との間の間隔G1が、試料Wと外周部材222のうちの待避部材223以外の部分との間の間隔G2とが異なるように、試料Wを保持する。つまり、ステージ22は、保持面HSと試料Wとが同心となるように試料Wを保持することに代えて、保持面HSに対して試料Wが偏って分布するように試料Wを保持する。図17(a)及び図17(b)に示す例では、ステージ22は、試料Wと待避部材223との間の間隔G1が、試料Wと外周部材222のうちの待避部材223とは逆側に位置する部分との間の間隔G2よりも小さくなるように、試料Wを保持している。 As shown in FIGS. 17 (a) and 17 (b), in the third modification, in the stage 22, the distance G1 between the sample W and the retreat member 223 is set to retreat between the sample W and the outer peripheral member 222. The sample W is held so that the distance G2 from the portion other than the member 223 is different. That is, the stage 22 holds the sample W so that the sample W is unevenly distributed with respect to the holding surface HS, instead of holding the sample W so that the holding surface HS and the sample W are concentric with each other. In the example shown in FIGS. 17 (a) and 17 (b), in the stage 22, the distance G1 between the sample W and the retreat member 223 is opposite to the retreat member 223 of the sample W and the outer peripheral member 222. The sample W is held so as to be smaller than the distance G2 between the portion located at.

このようにステージ22が試料Wを保持すると、保持面HSと試料Wとが同心となるようにステージ22が試料Wを保持する場合と比較して、試料Wと待避部材223との間の空間SPgが小さくなる可能性が相対的に高くなる。空間SPgが小さくなると、真空領域VSPに対して空間SPgを介して気体が流入する可能性が小さくなる。このため、空間SPgを介した気体の流入に起因した真空領域SPの真空度の低下が適切に抑制される。 When the stage 22 holds the sample W in this way, the space between the sample W and the shunting member 223 is compared with the case where the stage 22 holds the sample W so that the holding surface HS and the sample W are concentric. The possibility that SPg becomes small is relatively high. When the space SPg becomes small, the possibility that gas flows into the vacuum region VSP through the space SPg becomes small. Therefore, the decrease in the degree of vacuum in the vacuum region SP due to the inflow of gas through the space SPg is appropriately suppressed.

尚、保持面HSの形状は試料Wと異なっていてもよい。 The shape of the holding surface HS may be different from that of the sample W.

(3−4)第4変形例
続いて、第4変形例における走査型電子顕微鏡SEMdについて説明する。走査型電子顕微鏡SEMdは、上述した走査型電子顕微鏡SEMと比較して、ビーム照射装置1に代えて、ビーム照射装置1dを備えているという点において異なっている。走査型電子顕微鏡SEMdのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図18から図19を参照しながら、第4変形例のビーム照射装置1dについて説明する。図18及び図19の夫々は、第4変形例のビーム照射装置1dの構造を示す断面図である。
(3-4) Fourth Modified Example Next, the scanning electron microscope SEMd in the fourth modified example will be described. The scanning electron microscope SEMd is different from the scanning electron microscope SEM described above in that the beam irradiating device 1d is provided instead of the beam irradiating device 1. Other structures of the scanning electron microscope SEMd may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the beam irradiation device 1d of the fourth modification will be described with reference to FIGS. 18 to 19. 18 and 19 are cross-sectional views showing the structure of the beam irradiation device 1d of the fourth modification.

図18及び図19に示すように、ビーム照射装置1dは、上述したビーム照射装置1と比較して、ビーム照射空間SPb1内において電子ビームEBの経路に挿脱可能な遮断部材151d及び152dを備えているという点で異なる。ビーム照射装置1dのその他の構造は、ビーム照射装置1と同一であってもよい。 As shown in FIGS. 18 and 19, the beam irradiation device 1d includes blocking members 151d and 152d that can be inserted into and removed from the path of the electron beam EB in the beam irradiation space SPb1 as compared with the beam irradiation device 1 described above. It differs in that it is. The other structure of the beam irradiation device 1d may be the same as that of the beam irradiation device 1.

遮断部材151d及び152dの夫々は、電子ビームEBを遮断可能な(つまり、通過させない)部材である。遮断部材151dは、電子銃113と、電磁レンズ114、対物レンズ115及び電子検出器116との間において電子ビームEBを遮断可能となるような位置に配置されている。遮断部材152dは、電磁レンズ114、対物レンズ115及び電子検出器116と、射出口119との間において電子ビームEBを遮断可能となるような位置に配置されている。但し、遮断部材151d及び152dの夫々は、電子ビームEBを遮断可能な任意の位置に配置されていてもよい。 Each of the blocking members 151d and 152d is a member capable of blocking (that is, not allowing) the electron beam EB to pass through. The blocking member 151d is arranged at a position capable of blocking the electron beam EB between the electron gun 113, the electromagnetic lens 114, the objective lens 115, and the electron detector 116. The blocking member 152d is arranged at a position capable of blocking the electron beam EB between the electromagnetic lens 114, the objective lens 115, the electron detector 116, and the emission port 119. However, the blocking members 151d and 152d may be arranged at arbitrary positions where the electron beam EB can be blocked.

遮断部材151d及び152dの夫々の状態は、制御装置4の制御下で、電子ビームEBの経路に挿入されている状態と、電子ビームEBの経路に挿入されていない状態との間で切替可能である。具体的には、例えば、制御装置4は、ビーム照射装置1が電子ビームEBを照射するべきタイミングで、図18に示すように、遮断部材151d及び152dの夫々の状態が、電子ビームEBの経路に挿入されていない状態となるように、遮断部材151d及び152dを制御する(例えば、移動可能な不図示の駆動系を制御する)。その結果、真空空間であるビーム通過空間SPb1からSPb3を介して電子ビームEBが試料W(或いは、上述した待避部材223のマーク領域MA)に照射される。一方で、例えば、制御装置4は、ビーム照射装置1が電子ビームEBを照射するべきでないタイミングで、図19に示すように、遮断部材151d及び152dの夫々の状態が、電子ビームEBの経路に挿入されている状態となるように、遮断部材151d及び152dを制御する。その結果、ビーム通過空間SPb1からSPb3を介して電子ビームEBが試料Wに照射されなくなる。 The states of the blocking members 151d and 152d can be switched between the state of being inserted into the path of the electron beam EB and the state of not being inserted into the path of the electron beam EB under the control of the control device 4. is there. Specifically, for example, in the control device 4, at the timing when the beam irradiation device 1 should irradiate the electron beam EB, as shown in FIG. 18, the respective states of the blocking members 151d and 152d are the paths of the electron beam EB. The blocking members 151d and 152d are controlled so as not to be inserted into the (for example, a movable drive system (not shown)). As a result, the electron beam EB is irradiated to the sample W (or the mark region MA of the above-mentioned shunting member 223) via the beam passing space SPb1 to SPb3 which is a vacuum space. On the other hand, for example, in the control device 4, at the timing when the beam irradiation device 1 should not irradiate the electron beam EB, as shown in FIG. 19, the respective states of the blocking members 151d and 152d are in the path of the electron beam EB. The blocking members 151d and 152d are controlled so as to be in the inserted state. As a result, the electron beam EB is not irradiated to the sample W from the beam passing space SPb1 through SPb3.

ビーム照射装置1が電子ビームEBを照射するべきタイミングの一例として、例えば、走査型電子顕微鏡SEMdが試料Wの状態を計測するタイミング、ビーム照射装置1が試料Wに対向しているタイミング(つまり、ビーム照射装置1が非待避状態にあるタイミング)、及び、待避状態にあるビーム照射装置1が待避部材223のマーク領域MAに対向しているタイミングがあげられる。一方で、ビーム照射装置1が電子ビームEBを照射するべきでないタイミングの一例として、例えば、走査型電子顕微鏡SEMdが試料Wの状態を計測しないタイミング、ビーム照射装置1が試料Wに対向していないタイミング、ビーム照射装置1が待避部材223のマーク領域MAに対向していないタイミング、及び、ビーム照射装置1が待避状態にあるタイミングがあげられる。 As an example of the timing at which the beam irradiation device 1 should irradiate the electron beam EB, for example, the timing at which the scanning electron microscope SEMd measures the state of the sample W and the timing at which the beam irradiation device 1 faces the sample W (that is, the timing). The timing at which the beam irradiating device 1 is in the non-reserving state) and the timing at which the beam irradiating device 1 in the retreating state faces the mark region MA of the retreating member 223. On the other hand, as an example of the timing at which the beam irradiation device 1 should not irradiate the electron beam EB, for example, the timing at which the scanning electron microscope SEMd does not measure the state of the sample W and the beam irradiation device 1 do not face the sample W. Examples include timing, timing at which the beam irradiation device 1 does not face the mark region MA of the relief member 223, and timing at which the beam irradiation device 1 is in the relief state.

このように、第4変形例の走査型電子顕微鏡SEMdは、電子銃113を停止することなく、ビーム照射装置1の状態を、電子ビームEBを照射する状態と、電子ビームEBを照射しない状態との間で切り替えることができる。 As described above, the scanning electron microscope SEMd of the fourth modification sets the state of the beam irradiation device 1 in a state of irradiating the electron beam EB and a state of not irradiating the electron beam EB without stopping the electron gun 113. You can switch between.

尚、制御装置4は、遮断部材151d及び152dのいずれか一方の状態が、電子ビームEBの経路に挿入されていない状態となる一方で、遮断部材151d及び152dのいずれか他方の状態が、電子ビームEBの経路に挿入されている状態となるように、遮断部材151d及び152dを制御してもよい。例えば、ビーム照射装置1が試料W及び待避部材223の双方に対向していない場合には、ビーム照射装置1が近い将来に電子ビームEBの照射を開始する可能性は相対的に小さい。従って、この場合には、制御装置4は、遮断部材151d及び152dの双方の状態が、電子ビームEBの経路に挿入されている態となるように、遮断部材151d及び152dを制御してもよい。一方で、例えば、ビーム照射装置1が待避部材223に対向している場合(その結果、例えば、上述したように、ステージ22が保持する試料Wが搬出入されている又は走査型電子顕微鏡SEMの動作状態が設定されている場合)には、ビーム照射装置1が近い将来に電子ビームEBの照射を開始する可能性は相対的に大きい。但し、ビーム照射装置1が待避部材223に対向している場合には、ビーム照射装置1は、電子ビームEBを照射するべきではない。従って、この場合には、制御装置4は、遮断部材151dの状態が、電子ビームEBの経路に挿入されていない状態となる一方で、遮断部材152dの状態が、電子ビームEBの経路に挿入されている状態となるように、遮断部材151d及び152dを制御してもよい。その結果、電子銃113から放出された電子ビームEBが遮断部材152dによって遮断されるがゆえに、ビーム照射装置1がビーム照射装置1の外部に電子ビームEBを照射することはない。その一方で、遮断部材151dの状態が、電子ビームEBの経路に挿入されていない状態となっているため、電子ビームEBの照射を開始するためには遮断部材152dが制御されれば十分である。このため、ビーム照射装置1が電子ビームEBを照射するべきでないタイミングで遮断部材151d及び152dの双方が電子ビームEBの経路に挿入されている場合と比較して、電子ビームEBの照射を相対的に迅速に開始することができる。 In the control device 4, one of the blocking members 151d and 152d is not inserted into the path of the electron beam EB, while the other state of the blocking member 151d and 152d is an electron. The blocking members 151d and 152d may be controlled so that they are inserted into the path of the beam EB. For example, when the beam irradiation device 1 does not face both the sample W and the shunting member 223, it is relatively unlikely that the beam irradiation device 1 will start irradiating the electron beam EB in the near future. Therefore, in this case, the control device 4 may control the blocking members 151d and 152d so that the states of both the blocking members 151d and 152d are inserted into the path of the electron beam EB. .. On the other hand, for example, when the beam irradiation device 1 faces the retreat member 223 (as a result, for example, as described above, the sample W held by the stage 22 is carried in and out, or the scanning electron microscope SEM. When the operating state is set), there is a relatively high possibility that the beam irradiation device 1 will start irradiating the electron beam EB in the near future. However, when the beam irradiating device 1 faces the shunting member 223, the beam irradiating device 1 should not irradiate the electron beam EB. Therefore, in this case, in the control device 4, the state of the blocking member 151d is not inserted into the path of the electron beam EB, while the state of the blocking member 152d is inserted into the path of the electron beam EB. The blocking members 151d and 152d may be controlled so as to be in this state. As a result, since the electron beam EB emitted from the electron gun 113 is blocked by the blocking member 152d, the beam irradiating device 1 does not irradiate the outside of the beam irradiating device 1 with the electron beam EB. On the other hand, since the state of the blocking member 151d is not inserted into the path of the electron beam EB, it is sufficient if the blocking member 152d is controlled in order to start the irradiation of the electron beam EB. .. Therefore, the irradiation of the electron beam EB is relative to the case where both the blocking members 151d and 152d are inserted into the path of the electron beam EB at the timing when the beam irradiation device 1 should not irradiate the electron beam EB. Can be started quickly.

尚、走査型電子顕微鏡SEMdは、ビーム照射装置1が電子ビームEBを照射するべきでないタイミングで、遮断部材151d及び152dを制御することに加えて又は代えて、電子銃113を停止してもよい。この場合であっても、ビーム照射装置1がビーム照射装置1の外部に電子ビームEBを照射することはない。或いは、走査型電子顕微鏡SEMdは、遮断部材151d及び152dを制御することに加えて又は代えて、電子ビームEBを捕捉可能な捕捉装置を用いて、ビーム照射装置1の外部への電子ビームEBの照射を停止してもよい。このような捕捉装置の一例として、いわゆるファラデーカップがあげられる。これらの場合には、走査型電子顕微鏡SEMdは、遮断部材151d及び152dを備えていなくてもよい。 The scanning electron microscope SEMd may stop the electron gun 113 in addition to or instead of controlling the blocking members 151d and 152d at a timing when the beam irradiation device 1 should not irradiate the electron beam EB. .. Even in this case, the beam irradiation device 1 does not irradiate the outside of the beam irradiation device 1 with the electron beam EB. Alternatively, the scanning electron microscope SEMd uses a capturing device capable of capturing the electron beam EB in addition to or instead of controlling the blocking members 151d and 152d to obtain the electron beam EB to the outside of the beam irradiation device 1. Irradiation may be stopped. An example of such a capture device is a so-called Faraday cup. In these cases, the scanning electron microscope SEMd may not include the blocking members 151d and 152d.

遮断部材151d及び152dは、電子ビームEBの経路に挿入されている状態において、ビーム通過空間SPb1のうち遮断部材151d及び152dの少なくとも一方と筐体111とによって囲まれた空間部分を密閉可能な部材であってもよい。この場合には、遮断部材151d及び152dによって、ビーム通過空間SPb1のうちの少なくとも一部の空間部分の真空度が維持される。図19に示す例では、遮断部材151dは、電子ビームEBの経路に挿入されている状態において、ビーム通過空間SPb1のうち遮断部材151dよりも上方の空間部分(具体的には、電子銃113に面した空間部分)を密閉可能な部材である。更に。遮断部材151dは、電子ビームEBの経路に挿入されている状態において、ビーム通過空間SPb1のうち遮断部材151dよりも下方であって且つ遮断部材152dよりも上方の空間部分(具体的には、電磁レンズ114、対物レンズ115及び電子検出器116に面した空間部分)を密閉可能な部材である。その結果、遮断部材151d及び152dは、電子ビームEBの経路に挿入されている状態において、真空ポンプ51及び52による排気を一時的に中断しても、ビーム通過空間SPb1のうちの少なくとも一部の空間部分の真空度が適切に維持される。更には、真空ポンプ51及び52による排気が再開されてからビーム通過空間SPb1の減圧が完了するまでに要する時間もまた短縮可能となる。 The blocking members 151d and 152d are members capable of sealing the space portion of the beam passing space SPb1 surrounded by at least one of the blocking members 151d and 152d and the housing 111 in a state of being inserted into the path of the electron beam EB. It may be. In this case, the blocking members 151d and 152d maintain the degree of vacuum in at least a part of the beam passing space SPb1. In the example shown in FIG. 19, when the blocking member 151d is inserted into the path of the electron beam EB, the space portion of the beam passing space SPb1 above the blocking member 151d (specifically, the electron gun 113). It is a member that can seal the facing space). Furthermore. When the blocking member 151d is inserted into the path of the electron beam EB, the space portion of the beam passing space SPb1 below the blocking member 151d and above the blocking member 152d (specifically, electromagnetic waves). It is a member capable of sealing the lens 114, the objective lens 115, and the space portion facing the electron detector 116). As a result, even if the exhaust by the vacuum pumps 51 and 52 is temporarily interrupted while the blocking members 151d and 152d are inserted in the path of the electron beam EB, at least a part of the beam passing space SPb1 is provided. The degree of vacuum in the space is properly maintained. Further, the time required from the restart of the exhaust gas by the vacuum pumps 51 and 52 to the completion of the depressurization of the beam passing space SPb1 can also be shortened.

尚、遮断部材151d及び152dの少なくとも一方は、電子ビームEBの経路に挿入されている状態において、ビーム通過空間SPb1のうち遮断部材151d及び152dの少なくとも一方と筐体111とによって囲まれた空間部分を密閉可能な部材である一方で、電子ビームEBを遮断しない部材であってもよい。つまり、遮断部材151d及び152dの少なくとも一方は、電子ビームEBが通過可能な部材であってもよい。 In a state where at least one of the blocking members 151d and 152d is inserted into the path of the electron beam EB, a space portion of the beam passing space SPb1 surrounded by at least one of the blocking members 151d and 152d and the housing 111. It may be a member that can seal the electron beam EB but does not block the electron beam EB. That is, at least one of the blocking members 151d and 152d may be a member through which the electron beam EB can pass.

(3−5)第5変形例
続いて、第5変形例における走査型電子顕微鏡SEMeについて説明する。走査型電子顕微鏡SEMeは、上述した走査型電子顕微鏡SEMと比較して、ビーム照射装置1に代えて、ビーム照射装置1eを備えているという点において異なっている。走査型電子顕微鏡SEMeのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図20を参照しながら、第5変形例のビーム照射装置1eについて説明する。図20は、第5変形例のビーム照射装置1eの構造を示す断面図である。
(3-5) Fifth Modified Example Next, the scanning electron microscope SEMe in the fifth modified example will be described. The scanning electron microscope SEMe is different from the scanning electron microscope SEM described above in that it includes a beam irradiating device 1e instead of the beam irradiating device 1. Other structures of the scanning electron microscope SEMe may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the beam irradiation device 1e of the fifth modification will be described with reference to FIG. 20. FIG. 20 is a cross-sectional view showing the structure of the beam irradiation device 1e of the fifth modification.

図20に示すように、ビーム照射装置1eは、上述したビーム照射装置1と比較して、真空形成部材121の射出面121LSに、気体供給孔126eが形成されているという点において異なっている。ビーム照射装置1eのその他の構造は、ビーム照射装置1と同一であってもよい。 As shown in FIG. 20, the beam irradiation device 1e is different from the beam irradiation device 1 described above in that the gas supply hole 126e is formed on the injection surface 121LS of the vacuum forming member 121. The other structure of the beam irradiation device 1e may be the same as that of the beam irradiation device 1.

気体供給孔126eは、ビーム射出口1232及び排気溝124を取り囲むように形成される。気体供給孔126eは、射出面121LSにおいて離散的な配列パターンで離散的に配列するように、複数形成されてもよい。例えば、気体供給孔126eは、射出面121LSにおいて環状に配列するように、複数形成されてもよい。或いは、気体供給孔126eは、射出面121LSにおいて連続的な分布パターンで連続的に分布するように形成されていてもよい。例えば、環状の気体供給孔126eが、射出面121LSに形成されてもよい。 The gas supply hole 126e is formed so as to surround the beam injection port 1232 and the exhaust groove 124. A plurality of gas supply holes 126e may be formed so as to be discretely arranged in a discrete arrangement pattern on the injection surface 121LS. For example, a plurality of gas supply holes 126e may be formed so as to be arranged in a ring shape on the injection surface 121LS. Alternatively, the gas supply holes 126e may be formed so as to be continuously distributed in a continuous distribution pattern on the injection surface 121LS. For example, the annular gas supply hole 126e may be formed on the injection surface 121LS.

気体供給孔126eには、気体供給孔126eに連通するように真空形成部材121(更には、必要に応じて側壁部材122)に形成される配管127eを介して気体供給装置が連結されている。気体供給装置は、配管127eを介して気体供給孔126eに気体を供給する。気体は、例えばCDA(Clean Dry Air:クリーンドライエアー)、或いは、不活性ガスであってもよい。不活性ガスの一例として、窒素ガス及びアルゴンガスの少なくとも一方があげられる。気体供給孔126eは、気体供給装置から供給された気体を、ビーム通過空間SPb3の周囲の空間(つまり、真空領域VSPの周囲の空間)に向けて供給(例えば、噴出)する。ビーム通過空間SPb3の周囲の空間に向けて供給された気体は、ビーム通過空間SPb3への不要物質の進入を防止するエアカーテンとして機能する。その結果、ビーム通過空間SPb3の外部からビーム通過空間SPb3の内部へと進入した不要物質によって電子ビームEBの適切な照射が妨げられにくくなる。このため、ビーム照射装置1eは、電子ビームEBを試料Wに適切に照射することができる。尚、不要物質は、電子ビームEBの適切な照射を妨げる物質である。不要物質の一例として、例えば、水蒸気(つまり、気体状の水分子)及びレジスト由来のアウトガスがあげられる。 A gas supply device is connected to the gas supply hole 126e via a pipe 127e formed in a vacuum forming member 121 (further, a side wall member 122 if necessary) so as to communicate with the gas supply hole 126e. The gas supply device supplies gas to the gas supply hole 126e via the pipe 127e. The gas may be, for example, CDA (Clean Dry Air) or an inert gas. As an example of the inert gas, at least one of nitrogen gas and argon gas can be mentioned. The gas supply hole 126e supplies (for example, ejects) the gas supplied from the gas supply device toward the space around the beam passage space SPb3 (that is, the space around the vacuum region VSP). The gas supplied toward the space around the beam passing space SPb3 functions as an air curtain that prevents unnecessary substances from entering the beam passing space SPb3. As a result, proper irradiation of the electron beam EB is less likely to be hindered by unnecessary substances that have entered the inside of the beam passing space SPb3 from the outside of the beam passing space SPb3. Therefore, the beam irradiation device 1e can appropriately irradiate the sample W with the electron beam EB. The unnecessary substance is a substance that hinders proper irradiation of the electron beam EB. Examples of unwanted substances include water vapor (ie, gaseous water molecules) and resist-derived outgas.

尚、気体供給孔126eのZ軸方向に沿った位置は、ビーム射出口1232及び排気溝124の少なくとも一方のZ軸方向に沿った位置よりも、試料Wから遠ざかる側(+Z方向側)であってもよい。 The position of the gas supply hole 126e along the Z-axis direction is on the side (+ Z-direction side) away from the sample W than the position along the Z-axis direction of at least one of the beam injection port 1232 and the exhaust groove 124. You may.

上述した説明では、走査型電子顕微鏡SEMは、電子ビーム照射装置1と待避部材223との間に真空領域VSPを新たに形成すると共に、当該新たに形成した真空領域VSPを維持したまま待避部材223から試料Wへと移動させることにより、電子ビーム照射装置1と試料Wとの間に真空領域VSPを新たに形成することに起因した試料Wの温度変化及び試料Wの熱変形を抑制した。しかしながら、第5変形例においては、真空領域VSPを新たに形成することに起因した試料Wの温度変化を予測して、当該温度変化を補償するように、気体供給孔126eを介して供給する気体の温度を調整しながら、試料Wと対向した状態において真空領域VSPを新たに形成してもよい。この場合、試料Wと対向した状態において真空領域VSPを新たに形成しても、真空領域VSPの形成に伴う試料Wの温度変化を打ち消すように調整された気体が供給されるので、試料Wの熱変形を抑制することができる。 In the above description, in the scanning electron microscope SEM, a vacuum region VSP is newly formed between the electron beam irradiation device 1 and the retreat member 223, and the retreat member 223 is maintained while maintaining the newly formed vacuum region VSP. By moving from the sample W to the sample W, the temperature change of the sample W and the thermal deformation of the sample W due to the formation of a new vacuum region VSP between the electron beam irradiation device 1 and the sample W were suppressed. However, in the fifth modification, the gas supplied through the gas supply hole 126e is predicted so as to predict the temperature change of the sample W due to the new formation of the vacuum region VSP and compensate for the temperature change. The vacuum region VSP may be newly formed in a state facing the sample W while adjusting the temperature of the sample W. In this case, even if the vacuum region VSP is newly formed in a state facing the sample W, the gas adjusted so as to cancel the temperature change of the sample W due to the formation of the vacuum region VSP is supplied. Thermal deformation can be suppressed.

(3−6)第6変形例
続いて、第6変形例における走査型電子顕微鏡SEMfについて説明する。走査型電子顕微鏡SEMfは、上述した走査型電子顕微鏡SEMと比較して、ステージ22に代えてステージ22fを備えているという点において異なっている。走査型電子顕微鏡SEMfのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図21を参照しながら、第6変形例のステージ22fについて説明する。図21は、第6変形例のステージ22fの構造を示す断面図である。
(3-6) Sixth Modified Example Next, the scanning electron microscope SEMf in the sixth modified example will be described. The scanning electron microscope SEMf is different from the scanning electron microscope SEM described above in that the stage 22f is provided instead of the stage 22. Other structures of the scanning electron microscope SEMf may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the stage 22f of the sixth modification will be described with reference to FIG. 21. FIG. 21 is a cross-sectional view showing the structure of the stage 22f of the sixth modification.

図21に示すように、ステージ22fは、上述したステージ22と比較して、外周部材222に代えて外周部材222fとを備えているという点で異なる。ステージ22fのその他の構造は、ステージ22のその他の構造と同一であってもよい。外周部材222fは、外周部材222fの上面OSが、保持部材221の保持面HSよりも、試料Wの厚み(つまり、Z軸方向の長さ)Whの規格値の範囲に応じて定まる所定量Wh_set1だけ上方に位置するという点で、外周部材222の上面OSが、保持部材221の保持面HSよりも試料Wの厚みWhだけ上方に位置する上述した外周部材222とは異なる。但し、所定量Wh_set1が試料Wの厚みWhと一致する場合には、外周部材222fの上面OSと保持面HSとの位置関係は、外周部材222の上面OSと保持面HSとの位置関係と一致する。外周部材222fのその他の構造は、外周部材222のその他の構造と同一であってもよい。尚、試料Wの厚みWhの規格値の範囲は、試料Wの厚みWhの公差、誤差の範囲と称してもよい。 As shown in FIG. 21, the stage 22f is different from the above-mentioned stage 22 in that the outer peripheral member 222f is provided instead of the outer peripheral member 222. The other structure of the stage 22f may be the same as the other structure of the stage 22. The outer peripheral member 222f has a predetermined amount Wh_set1 in which the upper surface OS of the outer peripheral member 222f is determined according to the standard value range of the thickness (that is, the length in the Z-axis direction) Wh of the sample W rather than the holding surface HS of the holding member 221. The upper surface OS of the outer peripheral member 222 is different from the above-mentioned outer peripheral member 222 which is located above the holding surface HS of the holding member 221 by the thickness Wh of the sample W in that it is located only above. However, when the predetermined amount Wh_set1 matches the thickness Wh of the sample W, the positional relationship between the upper surface OS of the outer peripheral member 222f and the holding surface HS matches the positional relationship between the upper surface OS of the outer peripheral member 222 and the holding surface HS. To do. The other structure of the outer peripheral member 222f may be the same as the other structure of the outer peripheral member 222. The range of the standard value of the thickness Wh of the sample W may be referred to as the range of tolerance and error of the thickness Wh of the sample W.

所定量Wh_set1は、規格上許容される試料Wの厚みWhの下限値Wh_min以下となる任意の値であってもよい。例えば、試料Wが、直径が300ミリメートルとなる半導体基板(例えば、シリコンウェハ)である場合には、試料Wの厚みWhは、750マイクロメートルから800マイクロメートルの範囲に収まるように、JEIDA(Japan Electronics and Information Technology Industries Association)規格又はSEMI(Semiconductor Equipment and Material International))規格によって定められている。この場合、下限値Wh_minは、750マイクロメートルとなる。従って、外周部材222fの上面OSは、保持部材221の保持面HSよりも、750マイクロメートル以下となる所定量Wh_set1だけ上方に位置する。 The predetermined amount Wh_set1 may be any value that is equal to or less than the lower limit value Wh_min of the thickness Wh of the sample W allowed in the standard. For example, when the sample W is a semiconductor substrate having a diameter of 300 mm (for example, a silicon wafer), the thickness Wh of the sample W is within the range of 750 micrometers to 800 micrometers, and JEIDA (Japan). It is defined by the Electronics and Information Technology Industries Association (Semication) standard or the SEMI (Semiconductor Appliance and Material International) standard. In this case, the lower limit value Wh_min is 750 micrometers. Therefore, the upper surface OS of the outer peripheral member 222f is located above the holding surface HS of the holding member 221 by a predetermined amount Wh_set1 which is 750 micrometers or less.

このように規格上許容される試料Wの厚みWhの下限値Wh_min以下となる所定量Wh_set1を用いて外周部材222fの上面OSfが保持部材221の保持面HSに対して位置合わせされると、図22に示すように、ステージ22fの移動に伴ってビーム照射装置1が試料Wに対して移動する(特に、XY平面に沿った方向に沿って移動する)場合において、ビーム照射装置1と外周部材222fとの衝突が防止可能となる。特に、どのような試料Wがステージ22fに保持されたとしても、その試料Wが規格に合致したものである限りは、外周部材222fの上面OSが試料Wの表面WSよりも下方に位置することになる。このため、外周部材222fの上面OSが試料Wの表面WSよりも上方に位置する場合と比較して、ビーム照射装置1と側壁部材222fとが衝突する可能性が小さくなる。従って、どのような試料Wがステージ22fに保持されたとしても、その試料Wが規格に合致したものである限りは、ビーム照射装置1と外周部材222fとの衝突が防止可能となる。従って、第6変形例の走査型電子顕微鏡SEMfは、上述した走査型電子顕微鏡SEMが享受可能な効果と同様の効果を享受しつつも、ビーム照射装置1とステージ22fとの衝突(特に、外周部材222fとの衝突)を適切に防止することができる。 As described above, when the upper surface OSf of the outer peripheral member 222f is aligned with the holding surface HS of the holding member 221 using a predetermined amount Wh_set1 which is equal to or less than the lower limit value Wh_min of the thickness Wh of the sample W permitted by the standard, FIG. As shown in 22, when the beam irradiation device 1 moves with respect to the sample W (particularly, moves along the direction along the XY plane) with the movement of the stage 22f, the beam irradiation device 1 and the outer peripheral member Collision with 222f can be prevented. In particular, no matter what sample W is held on the stage 22f, as long as the sample W conforms to the standard, the upper surface OS of the outer peripheral member 222f is located below the surface WS of the sample W. become. Therefore, the possibility that the beam irradiation device 1 and the side wall member 222f collide with each other is reduced as compared with the case where the upper surface OS of the outer peripheral member 222f is located above the surface WS of the sample W. Therefore, no matter what kind of sample W is held on the stage 22f, collision between the beam irradiation device 1 and the outer peripheral member 222f can be prevented as long as the sample W conforms to the standard. Therefore, the scanning electron microscope SEMf of the sixth modification enjoys the same effect as the effect that the scanning electron microscope SEM described above can enjoy, but the collision between the beam irradiation device 1 and the stage 22f (particularly, the outer periphery). (Collision with member 222f) can be appropriately prevented.

尚、第6変形例では、外周部材222fは、上述した外周部材222が備えている待避部材223を備えていてもよいし、備えていなくてもよい。外周部材222fが待避部材223を備えていない場合には、上述した待避部材223を利用した動作が行われなくてもよい。 In the sixth modification, the outer peripheral member 222f may or may not include the shunting member 223 included in the outer peripheral member 222 described above. When the outer peripheral member 222f does not include the shunting member 223, the operation using the shunting member 223 described above may not be performed.

(3−7)第7変形例
続いて、第7変形例における走査型電子顕微鏡SEMgについて説明する。走査型電子顕微鏡SEMgは、上述した走査型電子顕微鏡SEMと比較して、ステージ22に代えてステージ22gを備えているという点で異なっている。走査型電子顕微鏡SEMgのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図23(a)を参照しながら、第7変形例のステージ22gについて説明する。図23(a)は、第7変形例のステージ22gの構造を示す断面図である。
(3-7) 7th Modified Example Next, the scanning electron microscope SEMg in the 7th modified example will be described. The scanning electron microscope SEMg is different from the scanning electron microscope SEM described above in that it includes a stage 22g instead of the stage 22. The other structure of the scanning electron microscope SEMg may be the same as that of the scanning electron microscope SEM. Therefore, in the following, the stage 22g of the seventh modification will be described with reference to FIG. 23A. FIG. 23A is a cross-sectional view showing the structure of the stage 22g of the seventh modification.

図23(a)に示すように、ステージ22gは、保持部材221gと、外周部材222gとを備えている。保持部材221gは、上述した保持部材221と比較して、外周部材222gから分離されているという点で異なる。保持部材221gのその他の構造は、保持部材221のその他の構造と同一であってもよい。外周部材222gは、上述した外周部材222と比較して、保持部材221gの保持面HSに交差する方向(つまり、保持部材221gが保持する試料Wの表面WSuに交差する方向であって、例えば、Z軸方向)に沿って移動可能であるという点で異なる。つまり、外周部材222gは、上述した外周部材222と比較して、保持部材221gの保持面HSに交差する方向に沿った、保持部材221gの保持面HSと外周部材222gの上面OSとの相対位置(つまり、保持部材221gが保持する試料Wの表面WSuと外周部材222gの上面OSとの相対位置)を変更可能であるという点で異なる。外周部材222gのその他の構造は、外周部材222のその他の構造と同一であってもよい。 As shown in FIG. 23A, the stage 22g includes a holding member 221g and an outer peripheral member 222g. The holding member 221g is different from the holding member 221 described above in that it is separated from the outer peripheral member 222g. The other structure of the holding member 221g may be the same as the other structure of the holding member 221. The outer peripheral member 222g is in a direction intersecting the holding surface HS of the holding member 221g (that is, a direction intersecting the surface WSu of the sample W held by the holding member 221g, as compared with the outer peripheral member 222 described above, for example. It differs in that it can move along the Z-axis direction). That is, the outer peripheral member 222g is located at a relative position between the holding surface HS of the holding member 221g and the upper surface OS of the outer peripheral member 222g along the direction intersecting the holding surface HS of the holding member 221g, as compared with the outer peripheral member 222 described above. (That is, the relative position between the surface WSu of the sample W held by the holding member 221g and the upper surface OS of the outer peripheral member 222g) can be changed. The other structure of the outer peripheral member 222g may be the same as the other structure of the outer peripheral member 222.

外周部材222gを移動させるために、ステージ22gは、例えば、定盤21上に配置される支持部材223gと、支持部材223gに対して、保持面HSに交差する方向に沿って昇降可能なリフトピンbgとを備えている。リフトピン224gの上部には、外周部材222gの下面が接続されている。その結果、リフトピン224gの昇降に伴って、外周部材222gが昇降する(つまり、保持面HSに交差する方向に沿って移動する)。つまり、リフトピン224gの昇降に伴って、外周部材222gの上面OSが、保持面HSに交差する方向に沿って移動する。 In order to move the outer peripheral member 222g, the stage 22g is, for example, a lift pin bg that can be raised and lowered along a direction intersecting the holding surface HS with respect to the support member 223g arranged on the surface plate 21 and the support member 223g. And have. The lower surface of the outer peripheral member 222g is connected to the upper part of the lift pin 224g. As a result, as the lift pin 224 g moves up and down, the outer peripheral member 222 g moves up and down (that is, moves along the direction intersecting the holding surface HS). That is, as the lift pin 224 g moves up and down, the upper surface OS of the outer peripheral member 222 g moves along the direction intersecting the holding surface HS.

第7変形例では特に、外周部材222gは、保持部材221gが保持する試料Wの表面WSuと外周部材222gの上面OSとの実際の相対位置に基づいて移動する。外周部材222gが移動することで表面WSuと上面OSとの相対位置が変わるため、外周部材222gは、表面WSuとの上面OSとの実際の相対位置に基づいて表面WSuと上面OSとの相対位置を変更するように移動すると言える。更に、表面WSuと上面OSとの実際の相対位置は、試料Wの実際の厚みWhに応じて変わるため、外周部材222gは、試料Wの厚みWhに基づいて表面WSuと上面OSとの相対位置を変更するように移動すると言える。 In particular, in the seventh modification, the outer peripheral member 222g moves based on the actual relative position between the surface WSu of the sample W held by the holding member 221g and the upper surface OS of the outer peripheral member 222g. Since the relative position of the surface WSu and the upper surface OS changes as the outer peripheral member 222g moves, the outer peripheral member 222g has a relative position of the surface WSu and the upper surface OS based on the actual relative position of the surface WSu and the upper surface OS. It can be said that it moves to change. Further, since the actual relative position of the surface WSu and the upper surface OS changes according to the actual thickness Wh of the sample W, the outer peripheral member 222g is the relative position of the surface WSu and the upper surface OS based on the thickness Wh of the sample W. It can be said that it moves to change.

具体的には、例えば、外周部材222gの上面OSは、保持部材221gの保持面HSよりも、保持部材221が保持している試料Wの厚みWh以下となる所定量Wh_set2だけ上方に位置する。尚、所定量Wh_set2が試料Wの厚みWhと一致する場合には、外周部材222gの上面OSは、試料Wの上面(つまり、表面WSu)と同じ平面に位置する。つまり、外周部材222gの上面OSのZ軸に沿った位置は、試料Wの表面WSuのZ軸に沿った位置と揃う。一方で、所定量Wh_set2が試料Wの厚みWhより小さくなる場合には、外周部材222gの上面OSは、試料Wの表面WSuよりも下方に位置する。つまり、外周部材222gの上面OSは、試料Wの表面WSuよりも、保持部材221gの保持面HSに近くなる。このため、外周部材222gの上面OSの位置(特に、保持面HSに交差する方向における位置)は、保持部材221gが保持している試料Wの表面WSuの位置(特に、保持面HSに交差する方向における位置)に応じて変更されるとも言える。つまり、外周部材222gの上面OSが、保持部材221gが保持している試料Wの表面WSuと同じ高さに位置する又はより下方に位置するように、外周部材222gの位置が変更されるとも言える。 Specifically, for example, the upper surface OS of the outer peripheral member 222g is located above the holding surface HS of the holding member 221g by a predetermined amount Wh_set2 that is equal to or less than the thickness Wh of the sample W held by the holding member 221. When the predetermined amount Wh_set2 matches the thickness Wh of the sample W, the upper surface OS of the outer peripheral member 222g is located on the same plane as the upper surface (that is, the surface WSu) of the sample W. That is, the position of the outer peripheral member 222g along the Z axis of the upper surface OS is aligned with the position of the surface WSu of the sample W along the Z axis. On the other hand, when the predetermined amount Wh_set2 is smaller than the thickness Wh of the sample W, the upper surface OS of the outer peripheral member 222g is located below the surface WSu of the sample W. That is, the upper surface OS of the outer peripheral member 222g is closer to the holding surface HS of the holding member 221g than the surface WSu of the sample W. Therefore, the position of the upper surface OS of the outer peripheral member 222g (particularly, the position in the direction intersecting the holding surface HS) intersects the position of the surface WSu of the sample W held by the holding member 221g (particularly, the position intersects the holding surface HS). It can be said that it is changed according to the position in the direction). That is, it can be said that the position of the outer peripheral member 222g is changed so that the upper surface OS of the outer peripheral member 222g is located at the same height as or lower than the surface WSu of the sample W held by the holding member 221g. ..

例えば、保持部材221gが保持している試料Wの厚みWhが700マイクロメートルである場合には、側壁部材222gの上面OSは、保持部材221gの保持面HSよりも、700マイクロメートル以下となる所定量Wh_set2だけ上方に位置する。例えば、厚みWhが700マイクロメートルとなる試料Wを保持していた保持部材221gが、保持する試料Wの交換によって厚みWhが800マイクロメートルとなる試料Wを保持することになった場合には、外周部材222gの上面OSが、保持部材221gの保持面HSよりも、800マイクロメートル以下となる所定量Wh_set2だけ上方に位置するように、外周部材222gが移動する。 For example, when the thickness Wh of the sample W held by the holding member 221g is 700 micrometers, the upper surface OS of the side wall member 222g is 700 micrometers or less than the holding surface HS of the holding member 221g. It is located above the quantitative Wh_set2. For example, when the holding member 221 g that holds the sample W having a thickness Wh of 700 micrometers changes to hold the sample W to hold the sample W having a thickness Wh of 800 micrometers. The outer peripheral member 222g moves so that the upper surface OS of the outer peripheral member 222g is located above the holding surface HS of the holding member 221g by a predetermined amount Wh_set2 which is 800 micrometers or less.

このように外周部材222gの上面OSが保持部材221gの保持面HSに対して位置合わせされると、外周部材222gの上面OSが、保持部材221gが保持している試料Wの表面WSuと同じ高さに位置する又はより下方に位置することになる。このため、第7変形例においても、第6変形例と同様に、どのような試料Wがステージ22gに保持されたとしても、ビーム照射装置1と外周部材222gとの衝突が防止可能となる。特に、第7変形例では、規格に合致している試料Wのみならず、規格に合致していない試料Wがステージ22gに保持されたとしても、ビーム照射装置1と外周部材222gとの衝突が防止可能となる。従って、第7変形例の走査型電子顕微鏡SEMgは、上述した走査型電子顕微鏡SEMが享受可能な効果と同様の効果を享受しつつも、ビーム照射装置1とステージ22gとの衝突(特に、外周部材222gとの衝突)を適切に防止することができる。 When the upper surface OS of the outer peripheral member 222g is aligned with the holding surface HS of the holding member 221g in this way, the upper surface OS of the outer peripheral member 222g has the same height as the surface WSu of the sample W held by the holding member 221g. It will be located at or below the edge. Therefore, in the seventh modification as well, as in the sixth modification, no matter what sample W is held on the stage 22g, the collision between the beam irradiation device 1 and the outer peripheral member 222g can be prevented. In particular, in the seventh modification, even if not only the sample W conforming to the standard but also the sample W not conforming to the standard is held on the stage 22g, the collision between the beam irradiation device 1 and the outer peripheral member 222g occurs. It can be prevented. Therefore, the scanning electron microscope SEMg of the seventh modification enjoys the same effect as the effect that can be enjoyed by the scanning electron microscope SEM described above, but the collision between the beam irradiation device 1 and the stage 22 g (particularly, the outer circumference). (Collision with member 222g) can be appropriately prevented.

但し、外周部材222gの上面OSが、保持部材221gが保持している試料Wの表面WSuよりも上方に位置するように移動してもよい。一方で、外周部材222gの上面OSが、試料Wの表面WSuよりも上方又は下方に位置する場合には、Z軸方向における上面OSと表面WSuとの間の距離によっては真空領域VSPが破壊される可能性がある。尚、真空領域VSPの破壊の理由については、図6(a)から図6(b)等を参照しながら既に説明しているため、その詳細な説明については省略する。このため、Z軸方向における上面OSと表面WSuとの間の距離Dgは、許容上限距離以下となっていてもよい。許容上限距離は、例えば、ビーム照射装置1と試料Wの表面WSuとの間における真空領域VSPの形成に支障をきたすほどには上面OSと表面WSuとがZ軸方向において大きくは離れていない状況における上面OSと表面WSuとの間の距離に応じて設定されてもよい。一例として、許容上限距離は、ビーム照射装置1と試料Wの表面WSuとの間に真空領域VSPが形成されている場合におけるビーム照射装置1と表面WSuとの間の距離(つまり、射出面121LSと表面WSuとの間の距離であり、例えば、1マイクロメートルから10マイクロメートル)よりも小さくてもよい。この場合、外周部材222gの上面OSと試料Wの表面WSuとに跨るように形成される真空領域VSPが破壊される可能性は相対的に小さくなる。 However, the upper surface OS of the outer peripheral member 222g may be moved so as to be located above the surface WSu of the sample W held by the holding member 221g. On the other hand, when the upper surface OS of the outer peripheral member 222 g is located above or below the surface WSu of the sample W, the vacuum region VSP is destroyed depending on the distance between the upper surface OS and the surface WSu in the Z-axis direction. There is a possibility that Since the reason for the destruction of the vacuum region VSP has already been explained with reference to FIGS. 6 (a) to 6 (b) and the like, detailed description thereof will be omitted. Therefore, the distance Dg between the upper surface OS and the surface WSu in the Z-axis direction may be equal to or less than the allowable upper limit distance. The permissible upper limit distance is, for example, a situation in which the upper surface OS and the surface WSu are not so far apart in the Z-axis direction that the formation of the vacuum region VSP between the beam irradiation device 1 and the surface WSu of the sample W is hindered. It may be set according to the distance between the upper surface OS and the surface WSu in. As an example, the allowable upper limit distance is the distance between the beam irradiation device 1 and the surface WSu (that is, the injection surface 121LS) when the vacuum region VSP is formed between the beam irradiation device 1 and the surface WSu of the sample W. The distance between and the surface WSu, which may be less than, for example, 1 micrometer to 10 micrometers). In this case, the possibility that the vacuum region VSP formed so as to straddle the upper surface OS of the outer peripheral member 222 g and the surface WSu of the sample W is relatively small.

尚、第7変形例では、試料Wの厚みWhは、試料Wの表面WSuのうち真空領域VSPが接する(つまり、形成される又は面する)真空面部分の位置における厚みWhを意味していてもよい。この場合には、試料Wの厚みWhに基づいて試料Wの表面WSuと外周部材222gの上面OSとの相対位置を変更するように外周部材222gが移動することは、表面WSuのうち真空領域VSPが接する真空面部分と上面OSとの実際の相対位置に基づいて表面WSuと上面OSとの相対位置を変更するように外周部材222gが移動することと等価である。その結果、外周部材222gの上面OSが、表面WSuのうち真空領域VSPが接する真空面部分と同じ高さに位置する又はより下方に位置するように、外周部材222gの位置が変更される。 In the seventh modification, the thickness Wh of the sample W means the thickness Wh at the position of the vacuum surface portion of the surface WSu of the sample W where the vacuum region VSP is in contact (that is, formed or faces). May be good. In this case, the movement of the outer peripheral member 222g so as to change the relative position between the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222g based on the thickness Wh of the sample W means that the vacuum region VSP of the surface WSu. It is equivalent to moving the outer peripheral member 222g so as to change the relative position between the surface WSu and the upper surface OS based on the actual relative position between the vacuum surface portion in contact with the upper surface OS and the upper surface OS. As a result, the position of the outer peripheral member 222g is changed so that the upper surface OS of the outer peripheral member 222g is located at the same height as or lower than the vacuum surface portion of the surface WSu that is in contact with the vacuum region VSP.

或いは、第7変形例では、試料Wの厚みWhは、試料Wの周縁部(つまり、外縁部)の厚みWhを意味していてもよい。この場合には、試料Wの厚みWhに基づいて試料Wの表面WSuと外周部材222gの上面OSとの相対位置を変更するように外周部材222gが移動することは、試料Wの表面WSuのうち試料Wの周縁部における面部分と上面OS(特に、上面OSのうち試料W側に近接する面部分であって、上面OSの周縁部(つまり、内縁部))との実際の相対位置に基づいて表面WSuと上面OSとの相対位置を変更するように外周部材222gが移動することと等価である。この場合には、外周部材222gの上面OS(特に、上面OSのうち試料W側に近接する面部分)が、表面WSuのうち試料Wの周縁部における面部分と同じ高さに位置する又はより下方に位置するように、外周部材222gの位置が変更されるとも言える。 Alternatively, in the seventh modification, the thickness Wh of the sample W may mean the thickness Wh of the peripheral edge portion (that is, the outer edge portion) of the sample W. In this case, the movement of the outer peripheral member 222g so as to change the relative position between the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222g based on the thickness Wh of the sample W means that the surface WSu of the sample W is moved. Based on the actual relative position of the surface portion of the peripheral portion of the sample W and the upper surface OS (particularly, the surface portion of the upper surface OS that is close to the sample W side and the peripheral portion (that is, the inner edge portion) of the upper surface OS). This is equivalent to moving the outer peripheral member 222g so as to change the relative position between the surface WSu and the top surface OS. In this case, the upper surface OS of the outer peripheral member 222 g (particularly, the surface portion of the upper surface OS that is close to the sample W side) is located at the same height as the surface portion of the surface WSu at the peripheral portion of the sample W. It can be said that the position of the outer peripheral member 222g is changed so that it is located below.

尚、ステージ駆動系23により、支持部材223gは保持部材221gと共にXY平面内で移動可能であってもよい。また、図23(b)に示すように、支持部材223gは、定盤21に代えて保持部材221g1に取り付けられていてもよい。尚、保持部材221g1は、保持部材222gと比較して、支持部材223gの下方に延びて支持部材223gを下方から支持する部分221g1を備えているという点において異なる。保持部材221g1のその他の構造は、保持部材222gのその他の構造と同一であってもよい。 The stage drive system 23 may allow the support member 223g to move together with the holding member 221g in the XY plane. Further, as shown in FIG. 23 (b), the support member 223 g may be attached to the holding member 221 g1 instead of the surface plate 21. The holding member 221g1 is different from the holding member 222g in that it includes a portion 221g1 that extends below the support member 223g and supports the support member 223g from below. The other structure of the holding member 221g1 may be the same as the other structure of the holding member 222g.

第7変形例では、外周部材222gは、上述した外周部材222が備えている待避部材223を備えていてもよいし、備えていなくてもよい。外周部材222gが待避部材223を備えていない場合には、上述した待避部材223を利用した動作が行われなくてもよい。 In the seventh modification, the outer peripheral member 222g may or may not include the shunting member 223 included in the outer peripheral member 222 described above. When the outer peripheral member 222g does not include the shunting member 223, the operation using the shunting member 223 described above may not be performed.

(3−8)第8変形例
続いて、図24から図26を参照しながら、第8変形例における走査型電子顕微鏡SEMhについて説明する。図24に示すように、走査型電子顕微鏡SEMhは、上述した走査型電子顕微鏡SEMと比較して、単一のステージ22を備えるステージ装置2に代えて、複数のステージ22hを備えるステージ装置2hを備えているという点において異なっている。尚、図24は、ステージ装置2hが2つのステージ22hを備えている例を示している。つまり、図24は、ツインステージ型の又はデュアルステージ型の走査型電子顕微鏡SEMhを示している。以下では、2つのステージ22hを夫々ステージ22h−1及び22h−2と称して、両者を区別する。走査型電子顕微鏡SEMhのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。
(3-8) Eighth Modified Example Next, the scanning electron microscope SEMh in the eighth modified example will be described with reference to FIGS. 24 to 26. As shown in FIG. 24, the scanning electron microscope SEMh has a stage device 2h provided with a plurality of stages 22h instead of the stage device 2 having a single stage 22 as compared with the scanning electron microscope SEM described above. It differs in that it has. Note that FIG. 24 shows an example in which the stage device 2h includes two stages 22h. That is, FIG. 24 shows a twin-stage type or dual-stage type scanning electron microscope SEMh. In the following, the two stages 22h will be referred to as stages 22h-1 and 22h-2, respectively, to distinguish them from each other. Other structures of the scanning electron microscope SEMh may be the same as those of the scanning electron microscope SEM.

ステージ22h−1は、上述したステージ22と比較して、待避部材223を備えていなくてもよいという点において異なっている。ステージ22h−1のその他の構造は、ステージ22のその他の構造と同一であってもよい。つまり、ステージ22h−1は、保持部材221を備えており、且つ、上述した外周部材222と比較して待避部材223を備えていないという点において異なる外周部材222h−1を備えている。このため、第8変形例では、試料Wは、ステージ22h−1(特に、その保持部材221)によって保持される。外周部材222h−1のその他の構造は、外周部材222のその他の構造と同一であってもよい。 The stage 22h-1 is different from the above-mentioned stage 22 in that it does not have to be provided with the shunting member 223. The other structure of the stage 22h-1 may be the same as the other structure of the stage 22. That is, the stage 22h-1 is provided with the outer peripheral member 222h-1, which is different in that the holding member 221 is provided and the outer peripheral member 222 is not provided as compared with the outer peripheral member 222 described above. Therefore, in the eighth modification, the sample W is held by the stage 22h-1 (particularly, the holding member 221 thereof). The other structure of the outer peripheral member 222h-1 may be the same as the other structure of the outer peripheral member 222.

一方で、ステージ22h−2は、上述したステージ22と比較して、保持部材221及び外周部材222を備えていなくてもよい一方で、待避部材223を備えているという点において異なる。ステージ22h−2は、XY平面に沿った一の方向においてステージ22h−1に隣接する。従って、第8変形例の走査型電子顕微鏡SEMhにおいても、上述した走査型電子顕微鏡SEMと同様に、待避部材223は、XY平面内において保持部材221に隣接する位置において、保持部材221から離れる方向に広がる。ステージ22h−2のその他の構造は、ステージ22のその他の構造と同一であってもよい。つまり、走査型電子顕微鏡SEMhが備える待避部材223の構造は、上述した走査型電子顕微鏡SEMが備える待避部材223の構造と同一であってもよい。 On the other hand, the stage 22h-2 is different from the above-mentioned stage 22 in that the holding member 221 and the outer peripheral member 222 may not be provided, but the shunting member 223 is provided. The stage 22h-2 is adjacent to the stage 22h-1 in one direction along the XY plane. Therefore, also in the scanning electron microscope SEMh of the eighth modification, the relief member 223 is in the direction away from the holding member 221 at a position adjacent to the holding member 221 in the XY plane, similarly to the scanning electron microscope SEM described above. Spread to. The other structure of the stage 22h-2 may be the same as the other structure of the stage 22. That is, the structure of the shunting member 223 included in the scanning electron microscope SEMh may be the same as the structure of the shunting member 223 included in the scanning electron microscope SEM described above.

続いて、図25から図26を参照しながら、複数のステージ22h−1及び22h−2を備えるステージ装置2hの動作の流れについて説明する。試料Wを計測しているとき(つまり、ステージ22h−1が試料を保持している期間の少なくとも一部では)、図25(a)に示すように、ビーム照射装置1は、試料Wに対向した状態で、試料Wとの間に真空領域VSPを形成している。試料Wの計測が完了した後、或いは試料Wの計測が完了する前のタイミングで、図25(b)に示すように、ステージ駆動系23は、XY平面に沿ってステージ22h−2を移動して、ステージ22h−1とステージ22h−2とが互いに近接させる。このとき、ステージ22h−1とステージ22h−2とのXY平面における間隔は、例えば1μmから10μm程度であってもよい。その後、ステージ22h−1とステージ22h−2とを同時にXY平面に沿って移動させ、図25(c)に示した真空領域VSPが2つのステージ22h−1及び22h−2の双方と接する状態を経て、図26(a)に示すように、真空領域VSPを待避部材223の上面ESに位置させる。その後、ステージ22h−1をXY平面内で移動させ、図26(b)に示すように、試料Wの搬入位置(ローディングポジション)又は搬出位置(アンローディングポジション)にステージ22h−2を位置させる。 Subsequently, the operation flow of the stage apparatus 2h including the plurality of stages 22h-1 and 22h-2 will be described with reference to FIGS. 25 to 26. When measuring the sample W (that is, at least a part of the period in which the stage 22h-1 holds the sample), the beam irradiation device 1 faces the sample W as shown in FIG. 25 (a). In this state, a vacuum region VSP is formed between the sample W and the sample W. As shown in FIG. 25B, the stage drive system 23 moves the stage 22h-2 along the XY plane at the timing after the measurement of the sample W is completed or before the measurement of the sample W is completed. The stage 22h-1 and the stage 22h-2 are brought close to each other. At this time, the distance between the stage 22h-1 and the stage 22h-2 in the XY plane may be, for example, about 1 μm to 10 μm. After that, the stage 22h-1 and the stage 22h-2 are simultaneously moved along the XY plane so that the vacuum region VSS shown in FIG. 25 (c) is in contact with both the two stages 22h-1 and 22h-2. After that, as shown in FIG. 26A, the vacuum region VSP is positioned on the upper surface ES of the shunting member 223. After that, the stage 22h-1 is moved in the XY plane, and the stage 22h-2 is positioned at the loading position (loading position) or the unloading position (unloading position) of the sample W as shown in FIG. 26 (b).

尚、第8変型例において、ステージ22h−2によって試料Wを保持可能にする構成であってもよい。 In the eighth modification, the sample W may be held by the stage 22h-2.

第8変型例では、待避部材223と独立して試料Wを保持するステージ22h−1が移動可能であるため、ステージ22h−1の移動時の制約、例えば真空領域VSPを常に待避部材223の上面ES上に位置させなくてはならないという制約を少なくすることが可能である。 In the eighth variant, since the stage 22h-1 that holds the sample W independently of the shunting member 223 can be moved, restrictions on the movement of the stage 22h-1, for example, the vacuum region VSP is always applied to the upper surface of the shunting member 223. It is possible to reduce the restriction that it must be located on the ES.

このようなステージ22h−1及び22h−2を備える走査型電子顕微鏡SEMhにおいても、上述した走査型電子顕微鏡SEMが享受可能な効果と同様の効果が享受可能となる。 Even in the scanning electron microscope SEMh provided with such stages 22h-1 and 22h-2, the same effects as those that can be enjoyed by the scanning electron microscope SEM described above can be enjoyed.

尚、ステージ駆動系23は、ステージ22h−1及び22h−2を一体的に移動させてもよい。或いは、ステージ駆動系23は、ステージ22h−1及び22h−2を別個独立に移動させてもよい。或いは、走査型電子顕微鏡SEMhは、ステージ22h−1を移動させるためのステージ駆動系23と、ステージ22h−2を移動させるためのステージ駆動系23とを別個に備えていてもよい。 The stage drive system 23 may integrally move the stages 22h-1 and 22h-2. Alternatively, the stage drive system 23 may move the stages 22h-1 and 22h-2 independently and independently. Alternatively, the scanning electron microscope SEMh may separately include a stage drive system 23 for moving the stage 22h-1 and a stage drive system 23 for moving the stage 22h-2.

(3−9)第9変形例
続いて、第9変形例における走査型電子顕微鏡SEMiについて説明する。走査型電子顕微鏡SEMiは、上述した走査型電子顕微鏡SEMと比較して、ビーム照射装置1に代えて第4変形例のビーム照射装置1dを備えている(特に、ビーム通過空間SPb1のうち筐体111と共に囲まれた空間部分を密閉可能な遮断部材151d及び152dを備えている)という点において異なっている。更に、走査型電子顕微鏡SEMiは、上述した走査型電子顕微鏡SEMと比較して、ステージ22に代えて第7変形例のステージ22gを備えている(つまり、保持部材221gが保持する試料Wの表面WSuに交差する方向(例えば、Z軸方向)に沿って移動可能な外周部材222gを備えている)という点において異なっている。走査型電子顕微鏡SEMiのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、走査型電子顕微鏡SEMiの構造の詳細な説明は省略する。
(3-9) Ninth Modification Example Next, the scanning electron microscope SEMi in the ninth modification will be described. Compared with the scanning electron microscope SEM described above, the scanning electron microscope SEMi includes the beam irradiating device 1d of the fourth modification instead of the beam irradiating device 1 (in particular, the housing of the beam passing space SPb1). It is different in that it is provided with blocking members 151d and 152d that can seal the space enclosed with 111). Further, the scanning electron microscope SEMi is provided with the stage 22g of the seventh modification instead of the stage 22 as compared with the scanning electron microscope SEM described above (that is, the surface of the sample W held by the holding member 221g). It differs in that it includes 222 g of an outer peripheral member that can move along a direction intersecting the WSu (eg, the Z-axis direction). Other structures of the scanning electron microscope SEMi may be the same as those of the scanning electron microscope SEM. Therefore, a detailed description of the structure of the scanning electron microscope SEMi will be omitted.

第9変形例では、走査型電子顕微鏡SEMiは、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる際に真空領域VSPを維持するための方法を適宜選択可能である。以下、図27を参照しながら、真空領域VSPを維持するための動作の流れについて説明する。 In the ninth modification, the scanning electron microscope SEMi provides a method for maintaining the vacuum region VSP when the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. It can be selected as appropriate. Hereinafter, the flow of operation for maintaining the vacuum region VSP will be described with reference to FIG. 27.

図27に示すように、制御装置4は、まず、真空領域VSPの移動元の面(以降、適宜“移動元面”と称する)のZ位置を特定する(ステップS11)。更に、制御装置4は、真空領域VSPの移動先の面(以降、適宜“移動先面”と称する)のZ位置を特定する(ステップS12)。尚、Z位置は、Z軸方向における位置を意味する。ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる場合には、移動元面が試料Wの表面WSuに相当し、移動先面が外周部材222gの上面OS(特に、待避部材223の上面ES)に相当する。一方で、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる場合には、移動元面が外周部材222gの上面OS(特に、待避部材223の上面ES)に相当し、移動先面が試料Wの表面WSuに相当する。 As shown in FIG. 27, the control device 4 first specifies the Z position of the movement source surface of the vacuum region VSP (hereinafter, appropriately referred to as “movement source surface”) (step S11). Further, the control device 4 specifies the Z position of the destination surface of the vacuum region VSP (hereinafter, appropriately referred to as “movement destination surface”) (step S12). The Z position means a position in the Z-axis direction. When the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state, the moving source surface corresponds to the surface WSu of the sample W, and the moving destination surface is the upper surface OS of the outer peripheral member 222g (particularly, the shunting member 223). It corresponds to the upper surface ES). On the other hand, when the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state, the moving source surface corresponds to the upper surface OS of the outer peripheral member 222g (particularly, the upper surface ES of the shunting member 223), and the moving destination surface. Corresponds to the surface WSu of the sample W.

ここで、図28を参照しながら、図27のステップS11において移動元面のZ位置を特定する動作の流れについて説明する。尚、図27のステップS12において移動先面のZ位置を特定する動作の流れは、移動元面のZ位置を特定する動作の流れと同一であるため、その詳細な説明を省略する。図28に示すように、制御装置4は、移動元面のZ位置に関する位置情報(以降、“Z位置情報”と称する)を既に保有しているか否かを判定する(ステップS111)。例えば、制御装置4は、移動元面のZ位置を計測可能な計測装置による過去の計測結果を示す情報を既に保有している場合には、Z位置情報を既に保有していると判定してもよい。 Here, with reference to FIG. 28, the flow of the operation of specifying the Z position of the movement source surface in step S11 of FIG. 27 will be described. Since the flow of the operation of specifying the Z position of the moving destination surface in step S12 of FIG. 27 is the same as the flow of the operation of specifying the Z position of the moving source surface, detailed description thereof will be omitted. As shown in FIG. 28, the control device 4 determines whether or not the position information (hereinafter, referred to as “Z position information”) regarding the Z position of the movement source surface is already possessed (step S111). For example, when the control device 4 already has information indicating the past measurement result by the measuring device capable of measuring the Z position of the moving source surface, it determines that the Z position information is already possessed. May be good.

ステップS111における判定の結果、Z位置情報を制御装置4が既に保有していると判定された場合には(ステップS111:Yes)、制御装置4は、既に保有しているZ位置情報に基づいて、移動元面のZ位置を特定する(ステップS131)。他方で、ステップS111における判定の結果、Z位置情報を制御装置4が保有していないと判定された場合には(ステップS111:No)、制御装置4は、走査型電子顕微鏡SEMiが、Z位置情報を新たに取得するための位置情報取得装置を備えているか否かを判定する(ステップS112)。位置情報取得装置の一例として、移動元面のZ位置を計測可能な計測装置(例えば、レーザ干渉計及びエンコーダの少なくとも一方)があげられる。 If it is determined that the control device 4 already possesses the Z position information as a result of the determination in step S111 (step S111: Yes), the control device 4 is based on the Z position information already possessed. , The Z position of the movement source surface is specified (step S131). On the other hand, when it is determined that the control device 4 does not have the Z position information as a result of the determination in step S111 (step S111: No), in the control device 4, the scanning electron microscope SEMi is in the Z position. It is determined whether or not the position information acquisition device for newly acquiring the information is provided (step S112). As an example of the position information acquisition device, a measuring device capable of measuring the Z position of the moving source surface (for example, at least one of a laser interferometer and an encoder) can be mentioned.

ステップS112における判定の結果、走査型電子顕微鏡SEMiが位置情報取得装置を備えていると判定された場合には(ステップS112:Yes)、制御装置4は、位置情報取得装置にZ位置情報を新たに取得させるか否かを判定する(ステップS113)。ステップS113における判定の結果、位置情報取得装置にZ位置情報を新たに取得させると判定された場合には(ステップS113:Yes)、制御装置4は、位置情報取得装置にZ位置情報を新たに取得させた上で、新たに取得されたZ位置情報に基づいて、移動元面のZ位置を特定する(ステップS131)。 As a result of the determination in step S112, when it is determined that the scanning electron microscope SEMi is equipped with the position information acquisition device (step S112: Yes), the control device 4 newly adds Z position information to the position information acquisition device. Is determined (step S113). As a result of the determination in step S113, when it is determined that the position information acquisition device newly acquires the Z position information (step S113: Yes), the control device 4 newly acquires the Z position information in the position information acquisition device. After the acquisition, the Z position of the movement source surface is specified based on the newly acquired Z position information (step S131).

他方で、ステップS112における判定の結果、走査型電子顕微鏡SEMiが位置情報取得装置を備えていないと判定された場合(ステップS112:No)、又は、ステップS113における判定の結果、位置情報取得装置にZ位置情報を新たに取得させないと判定された場合には(ステップS113:No)、制御装置4は、移動元面を表面に含む物体(以降、“移動元物体”と称する)のZ軸方向における寸法(実質的には、厚み)に関する寸法情報(以降、“Z寸法情報”と称する)を既に保有しているか否かを判定する(ステップS121)。例えば、制御装置4は、移動元物体のZ軸方向における寸法を計測可能な計測装置による過去の計測結果を示す情報を既に保有している場合には、Z寸法情報を既に保有していると判定してもよい。尚、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる場合には、移動元物体が試料Wに相当し、移動先面を表面に含む物体(以降、“移動先物体”と称する)が外周部材222g(特に、待避部材223)に相当する。一方で、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる場合には、移動元物体が外周部材222g(特に、待避部材223)に相当し、移動先物体が試料Wに相当する。 On the other hand, when it is determined as a result of the determination in step S112 that the scanning electron microscope SEMi does not have the position information acquisition device (step S112: No), or as a result of the determination in step S113, the position information acquisition device is used. When it is determined that the Z position information is not newly acquired (step S113: No), the control device 4 determines the Z-axis direction of the object including the movement source surface on the surface (hereinafter referred to as “movement source object”). It is determined whether or not the dimensional information (hereinafter, referred to as "Z dimensional information") relating to the dimension (substantially the thickness) in the above is already possessed (step S121). For example, when the control device 4 already has information indicating the past measurement results by the measuring device capable of measuring the dimensions of the moving source object in the Z-axis direction, it is said that the control device 4 already has the Z dimension information. You may judge. When the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state, the moving source object corresponds to the sample W, and the moving destination surface is included in the surface (hereinafter, referred to as "moving destination object"). ) Corresponds to 222 g of the outer peripheral member (particularly, the shunting member 223). On the other hand, when the state of the beam irradiation device 1 is switched from the shunting state to the non-sheltering state, the moving source object corresponds to the outer peripheral member 222g (particularly, the shunting member 223), and the moving destination object corresponds to the sample W. ..

ステップS121における判定の結果、Z寸法情報を制御装置4が既に保有していると判定された場合には(ステップS121:Yes)、制御装置4は、既に保有しているZ寸法情報に基づいて、移動元面のZ位置を特定(つまり、推定)する(ステップS132)。他方で、ステップS121における判定の結果、Z寸法情報を制御装置4が保有していないと判定された場合には(ステップS121:No)、制御装置4は、走査型電子顕微鏡SEMiが、Z寸法情報を新たに取得するための寸法情報取得装置を備えているか否かを判定する(ステップS122)。寸法情報取得装置の一例として、移動元物体の寸法を計測可能な計測装置(例えば、レーザスキャナ等)があげられる。 If it is determined that the control device 4 already possesses the Z dimension information as a result of the determination in step S121 (step S121: Yes), the control device 4 is based on the Z dimension information already possessed. , The Z position of the movement source surface is specified (that is, estimated) (step S132). On the other hand, when it is determined that the control device 4 does not have the Z dimension information as a result of the determination in step S121 (step S121: No), the scanning electron microscope SEMi sets the Z dimension in the control device 4. It is determined whether or not the dimensional information acquisition device for newly acquiring the information is provided (step S122). An example of a dimensional information acquisition device is a measuring device (for example, a laser scanner or the like) capable of measuring the dimensions of a moving source object.

ステップS122における判定の結果、走査型電子顕微鏡SEMiが寸法情報取得装置を備えていると判定された場合には(ステップS122:Yes)、制御装置4は、寸法情報取得装置にZ寸法情報を新たに取得させるか否かを判定する(ステップS123)。ステップS123における判定の結果、寸法情報取得装置にZ寸法情報を新たに取得させると判定された場合には(ステップS123:Yes)、制御装置4は、寸法情報取得装置にZ寸法情報を新たに取得させた上で、新たに取得されたZ寸法情報に基づいて、移動元面のZ位置を特定(つまり、推定)する(ステップS132)。 If it is determined as a result of the determination in step S122 that the scanning electron microscope SEMi is equipped with the dimensional information acquisition device (step S122: Yes), the control device 4 newly adds Z dimensional information to the dimensional information acquisition device. Determines whether or not to obtain the data (step S123). As a result of the determination in step S123, when it is determined that the dimensional information acquisition device newly acquires the Z dimensional information (step S123: Yes), the control device 4 newly acquires the Z dimensional information in the dimensional information acquisition device. After the acquisition, the Z position of the movement source surface is specified (that is, estimated) based on the newly acquired Z dimension information (step S132).

他方で、ステップS122における判定の結果、走査型電子顕微鏡SEMiが寸法情報取得装置を備えていないと判定された場合(ステップS122:No)、又は、ステップS123における判定の結果、寸法情報取得装置にZ寸法情報を新たに取得させないと判定された場合には(ステップS123:No)、制御装置4は、移動元物体のZ軸方向における寸法が、移動元物体のZ軸方向における寸法の規格値であると推定する(ステップS124)。その上で、制御装置4は、移動元物体のZ軸方向における寸法の規格値に基づいて、移動元面のZ位置を特定(つまり、推定)する(ステップS132)。 On the other hand, when it is determined as a result of the determination in step S122 that the scanning electron microscope SEMi does not have the dimension information acquisition device (step S122: No), or as a result of the determination in step S123, the dimension information acquisition device is used. When it is determined that the Z dimension information is not newly acquired (step S123: No), the control device 4 determines that the dimension of the moving source object in the Z axis direction is the standard value of the dimension of the moving source object in the Z axis direction. Is presumed to be (step S124). Then, the control device 4 specifies (that is, estimates) the Z position of the moving source surface based on the standard value of the dimensions of the moving source object in the Z axis direction (step S132).

再び図27において、その後、制御装置4は、ステップS11で特定した移動元面のZ位置とステップS12で特定した移動先面のZ位置との差分が、ビーム照射装置1と試料Wとの間の間隔Dの目標値である所望間隔D_targetに対して十分に小さいか否かを判定する(ステップS21)。つまり、制御装置4は、Z軸方向における移動元面と移動先面との間の間隔(或いは、距離)が、所望間隔D_targetに対して十分に小さいか否かを判定する。尚、移動元面のZ位置と移動先面のZ位置との差分(つまり、間隔)は、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる際に真空領域VSPが乗り越えるべき段差のZ軸方向におけるサイズに相当する。 Again in FIG. 27, after that, in the control device 4, the difference between the Z position of the moving source surface specified in step S11 and the Z position of the moving destination surface specified in step S12 is between the beam irradiation device 1 and the sample W. It is determined whether or not it is sufficiently smaller than the desired interval D_taget, which is the target value of the interval D of (step S21). That is, the control device 4 determines whether or not the distance (or distance) between the movement source surface and the movement destination surface in the Z-axis direction is sufficiently smaller than the desired distance D_target. The difference (that is, the interval) between the Z position of the moving source surface and the Z position of the moving destination surface changes the state of the beam irradiation device 1 from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state. It corresponds to the size of the step in the Z-axis direction that the vacuum region VSP should overcome.

Z位置の差分が所望間隔D_targetに対して十分に小さい状態か否かを判定することは、真空領域VSPが移動元面から移動先面に移動したとしても真空領域VSPが維持可能な程度にZ位置の差分が小さい(つまり、真空領域VSPが乗り越えるべき段差のZ軸方向におけるサイズが小さい)か否かを判定するために行われる。このため、Z位置の差分が所望間隔D_targetに対して十分に小さい状態は、真空領域VSPが移動元面から移動先面に移動したとしても真空領域VSPが維持可能な程度にZ位置の差分が小さい状態と等価であってもよい。つまり、Z位置の差分が所望間隔D_targetに対して十分に小さい状態は、移動元面との間に真空領域VSPを形成しているビーム照射装置1が移動先面に対向するようになるまでXY平面に沿って相対的に移動した場合であっても依然として移動先面との間に真空領域VSPを形成し続ける程度にZ位置の差分が小さい状態と等価であってもよい。言い換えれば、Z位置の差分が所望間隔D_targetに対して十分に小さい状態は、ビーム照射装置1と移動元面との間の間隔(つまり、出射面121LSのZ位置と移動元面のZ位置との差分)が、ビーム照射装置1と移動元面との間に形成される真空領域VSPを維持可能な間隔となり、且つ、ビーム照射装置1と移動先面との間の間隔(つまり、出射面121LSのZ位置と移動先面のZ位置との差分)が、ビーム照射装置1と移動先面との間に形成される真空領域VSPを維持可能な間隔となる程度にZ位置の差分が小さい状態と等価であってもよい。 Determining whether or not the difference between the Z positions is sufficiently small with respect to the desired interval D_target is such that the vacuum region VSP can be maintained even if the vacuum region VSP moves from the movement source surface to the movement destination surface. It is performed to determine whether or not the difference in position is small (that is, the size of the step to be overcome by the vacuum region VSP in the Z-axis direction is small). Therefore, when the difference in Z position is sufficiently small with respect to the desired interval D_target, the difference in Z position is sufficient to maintain the vacuum region VSP even if the vacuum region VSP moves from the movement source surface to the movement destination surface. It may be equivalent to a small state. That is, in a state where the difference in the Z positions is sufficiently small with respect to the desired interval D_target, XY until the beam irradiation device 1 forming the vacuum region VSP with the movement source surface faces the movement destination surface. Even when it moves relatively along the plane, it may be equivalent to a state where the difference in Z position is small enough to continue forming the vacuum region VSP with the destination surface. In other words, when the difference between the Z positions is sufficiently small with respect to the desired interval D_target, the interval between the beam irradiation device 1 and the movement source surface (that is, the Z position of the exit surface 121LS and the Z position of the movement source surface) The difference) is the interval at which the vacuum region VSP formed between the beam irradiation device 1 and the movement source surface can be maintained, and the distance between the beam irradiation device 1 and the movement destination surface (that is, the emission surface). The difference in Z position is small enough that the difference between the Z position of 121LS and the Z position of the destination surface is such that the vacuum region VSP formed between the beam irradiation device 1 and the destination surface can be maintained. It may be equivalent to the state.

ステップS21における判定の結果、Z位置との差分が所望間隔D_targetに対して十分に小さいと判定された場合には(ステップS21:Yes)、真空領域VSPが移動元面から移動先面に移動したとしても真空領域VSPが維持可能であると推定される。この場合には、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わるように、ステージ駆動系23がXY平面に沿った方向におけるステージ22とビーム照射装置1との相対位置を調整する(ステップS31)。その結果、真空領域VSPが形成されたまま、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる(ステップS31)。つまり、真空領域VSPが、ビーム照射装置1と試料Wとの間の空間からビーム照射装置1と待避部材223との間の空間へと又はビーム照射装置1と待避部材223との間の空間からビーム照射装置1と試料Wとの間の空間へと移動する(ステップS31)。 As a result of the determination in step S21, when it is determined that the difference from the Z position is sufficiently smaller than the desired interval D_target (step S21: Yes), the vacuum region VSP has moved from the movement source surface to the movement destination surface. However, it is presumed that the vacuum region VSP can be maintained. In this case, the stage drive system 23 irradiates the stage 22 and the beam in the direction along the XY plane so that the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. The relative position with respect to the device 1 is adjusted (step S31). As a result, the state of the beam irradiation device 1 is switched from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state while the vacuum region VSP is formed (step S31). That is, the vacuum region VSP is from the space between the beam irradiation device 1 and the sample W to the space between the beam irradiation device 1 and the retreat member 223, or from the space between the beam irradiation device 1 and the retreat member 223. It moves to the space between the beam irradiation device 1 and the sample W (step S31).

但し、外周部材222gがZ軸方向に沿って移動可能であるがゆえに、移動元面と移動先面とが同じ高さに位置するとは限らない。つまり、移動元面が移動先面よりも低いかもしれないし、移動元面が移動先面よりも高いかもしれない。尚、移動元面が移動先面よりも低い状態は、移動元面と対向しているビーム照射装置1と移動元面との間の距離(具体的には、Z軸方向の距離であり且つZ軸方向における位置の差分、以下、第9変形例において同じ)よりも、XY平面に沿って相対的に移動して移動先面と対向することになったビーム照射装置1と移動先面との間の距離が小さい状態に相当する。一方で、移動元面が移動先面よりも高い状態は、移動元面と対向しているビーム照射装置1と移動元面との間の距離よりも、XY平面に沿って相対的に移動して移動先面と対向することになったビーム照射装置1と移動先面との間の距離が大きい状態に相当する。 However, since the outer peripheral member 222g can move along the Z-axis direction, the movement source surface and the movement destination surface are not always located at the same height. That is, the source surface may be lower than the destination surface, and the source surface may be higher than the destination surface. The state in which the movement source surface is lower than the movement destination surface is the distance between the beam irradiation device 1 facing the movement source surface and the movement source surface (specifically, the distance in the Z-axis direction). The beam irradiator 1 and the destination surface, which move relatively along the XY plane and face the destination surface, rather than the difference in position in the Z-axis direction (hereinafter, the same in the ninth modification). Corresponds to the state where the distance between them is small. On the other hand, when the movement source surface is higher than the movement destination surface, the movement is relatively along the XY plane rather than the distance between the beam irradiation device 1 facing the movement source surface and the movement source surface. This corresponds to a state in which the distance between the beam irradiating device 1 facing the moving destination surface and the moving destination surface is large.

ここで、仮に移動元面が移動先面よりも低い場合には、移動元面が移動先面よりも高い場合と比較して、ビーム照射装置1の状態が非待避状態から待避状態へと又は待避状態から非待避状態へと切り替わる過程で、ビーム照射装置1が移動先物体に衝突する可能性が相対的に高くなる。例えば、図29(a)は、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる場合において、移動元面である試料Wの表面WSuが、移動先面である外周部材222gの上面OSよりも低い例を示しており、図29(b)は、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる場合において、移動元面である試料Wの表面WSuが、移動先面である外周部材222gの上面OSよりも高い例を示している。例えば、図30(a)は、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる移動元面である外周部材222gの上面OSが、移動先面である試料Wの表面WSuよりも低い例を示しており、例えば、図30(b)は、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる移動元面である外周部材222gの上面OSが、移動先面である試料Wの表面WSuよりも高い例を示している。 Here, if the moving source surface is lower than the moving destination surface, the state of the beam irradiation device 1 changes from the non-shelter state to the shunting state as compared with the case where the moving source surface is higher than the moving destination surface. In the process of switching from the shunted state to the non-sheltered state, the possibility that the beam irradiation device 1 collides with the moving destination object becomes relatively high. For example, FIG. 29 (a) shows that when the state of the beam irradiation device 1 is switched from the non-reserved state to the reserved state, the surface WSu of the sample W, which is the moving source surface, is the upper surface of the outer peripheral member 222g, which is the moving destination surface. An example lower than that of the OS is shown, and FIG. 29 (b) shows a movement destination where the surface WSu of the sample W, which is the movement source surface, is the movement destination when the state of the beam irradiation device 1 is switched from the non-shelter state to the relief state. An example is shown in which the outer peripheral member 222 g, which is a surface, is higher than the upper surface OS. For example, in FIG. 30A, the upper surface OS of the outer peripheral member 222g, which is the moving source surface for switching the state of the beam irradiation device 1 from the retracted state to the non-reserved state, is larger than the surface WSu of the sample W, which is the moving destination surface. A low example is shown. For example, in FIG. 30B, the upper surface OS of the outer peripheral member 222g, which is the movement source surface at which the state of the beam irradiation device 1 is switched from the retracted state to the non-evacuated state, is the destination surface. An example higher than the surface WSu of the sample W is shown.

このため、走査型電子顕微鏡SEMiは、移動元面が移動先面よりも低い場合には、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替えるためにステージ駆動系23を制御してステージ22gをXY平面に沿って移動させる(つまり、ビーム照射装置1をXY平面に沿って相対的に移動させる)前に、間隔調整系14を制御してビーム照射装置1と移動元面との間の距離を大きくする。例えば、図29(c)は、ビーム照射装置1の状態が非待避状態から待避状態へと切り替わる場合において、ビーム照射装置1と移動元面である試料Wの表面WSuとの間の距離が、距離d11から距離d12(但し、d12>d11)まで大きくなるようにZ軸方向に沿ってビーム照射装置1が移動する例を示している。例えば、図30(c)は、ビーム照射装置1の状態が待避状態から非待避状態へと切り替わる場合において、ビーム照射装置1と移動元面である外周部材222gの上面OSとの間の距離が、距離d21から距離d22(但し、d22>d21)まで大きくなるようにZ軸方向に沿ってビーム照射装置1が移動する例を示している。尚、図29(c)及び図30(c)では、移動前の外周部材222gが点線で示されており、移動後の外周部材222gが実線で示されている。この場合、ビーム照射装置1と移動元面との間の距離は、ビーム照射装置1と移動元面との間に真空領域VSPを形成可能(つまり、維持可能)であって、且つ、XY平面に沿って相対的に移動させて移動先面と対向することになったビーム照射装置1と移動先面との間に真空領域VSPを形成可能な距離に設定される。その結果、走査型電子顕微鏡SEMiは、ビーム照射装置1と移動先物体との衝突を防止しながら、真空領域VSPを維持することができる。 Therefore, the scanning electron microscope SEMi switches the state of the beam irradiation device 1 from the non-retracted state to the retreated state or from the retreated state to the non-reserved state when the moving source surface is lower than the moving destination surface. Before controlling the stage drive system 23 to move the stage 22 g along the XY plane (that is, moving the beam irradiation device 1 relatively along the XY plane), the interval adjusting system 14 is controlled to move the beam. Increase the distance between the irradiation device 1 and the moving source surface. For example, FIG. 29 (c) shows that when the state of the beam irradiation device 1 is switched from the non-retracted state to the relieved state, the distance between the beam irradiation device 1 and the surface WSu of the sample W which is the moving source surface is determined. An example is shown in which the beam irradiation device 1 moves along the Z-axis direction so as to increase from the distance d11 to the distance d12 (where d12> d11). For example, FIG. 30C shows that when the state of the beam irradiation device 1 is switched from the retracted state to the non-retracted state, the distance between the beam irradiation device 1 and the upper surface OS of the outer peripheral member 222 g which is the movement source surface is , An example is shown in which the beam irradiation device 1 moves along the Z-axis direction so as to increase from the distance d21 to the distance d22 (however, d22> d21). In FIGS. 29 (c) and 30 (c), the outer peripheral member 222 g before the movement is shown by a dotted line, and the outer peripheral member 222 g after the movement is shown by a solid line. In this case, the distance between the beam irradiation device 1 and the movement source surface is such that a vacuum region VSP can be formed (that is, can be maintained) between the beam irradiation device 1 and the movement source surface, and the XY plane. The distance is set so that a vacuum region VSP can be formed between the beam irradiation device 1 and the destination surface, which are relatively moved along the above surface and face the destination surface. As a result, the scanning electron microscope SEMi can maintain the vacuum region VSP while preventing the beam irradiation device 1 from colliding with the destination object.

一方で、走査型電子顕微鏡SEMiは、移動元面が移動先面よりも高い場合には、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替えるためにステージ駆動系23を制御してステージ22gをXY平面に沿って移動させる(つまり、ビーム照射装置1をXY平面に沿って相対的に移動させる)前に、間隔調整系14を制御してビーム照射装置1と移動元面との間の距離を大きくしなくてもよい。この場合には、走査型電子顕微鏡SEMiは、ビーム照射装置1と移動元面との間の距離を維持したまま(例えば、上述した真空領域VSPを形成可能な距離に維持したまま)、ステージ駆動系23を制御してステージ22gをXY平面に沿って移動させることで、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替えてもよい。 On the other hand, in the scanning electron microscope SEMi, when the moving source surface is higher than the moving destination surface, the state of the beam irradiation device 1 is switched from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. Before controlling the stage drive system 23 to move the stage 22 g along the XY plane (that is, moving the beam irradiation device 1 relatively along the XY plane), the interval adjusting system 14 is controlled to move the beam. It is not necessary to increase the distance between the irradiation device 1 and the moving source surface. In this case, the scanning electron microscope SEMi is stage-driven while maintaining the distance between the beam irradiation device 1 and the moving source surface (for example, maintaining the above-mentioned vacuum region VSP at a distance that can be formed). By controlling the system 23 and moving the stage 22g along the XY plane, the state of the beam irradiation device 1 may be switched from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state.

他方で、ステップS21における判定の結果、Z位置の差分が所望間隔D_targetに対して十分に小さくないと判定された場合には(ステップS21:No)、真空領域VSPが移動元面から移動先面に移動すると、真空領域VSPが維持できない可能性がある。つまり、ビーム照射装置1と移動元面との間の間隔が、ビーム照射装置1と移動元面との間に形成される真空領域VSPを維持可能な間隔となる一方で、ビーム照射装置1と移動先面との間の間隔が、ビーム照射装置1と移動先面との間に形成される真空領域VSPを維持可能な間隔とならない可能性がある。そこで、この場合には、走査型電子顕微鏡SEMiは、真空領域VSPを維持するための動作を行う。 On the other hand, if it is determined as a result of the determination in step S21 that the difference between the Z positions is not sufficiently small with respect to the desired interval D_target (step S21: No), the vacuum region VSP is moved from the moving source surface to the moving destination surface. If moved to, the vacuum region VSP may not be maintained. That is, the distance between the beam irradiation device 1 and the movement source surface is such that the vacuum region VSP formed between the beam irradiation device 1 and the movement source surface can be maintained, while the distance between the beam irradiation device 1 and the movement source surface is maintained. The distance between the destination surface and the destination surface may not be such a distance that the vacuum region VSP formed between the beam irradiation device 1 and the destination surface can be maintained. Therefore, in this case, the scanning electron microscope SEMi performs an operation for maintaining the vacuum region VSP.

具体的には、まず、制御装置4は、Z軸方向に沿って外周部材222gが移動可能であるか否かを判定する(ステップS22)。ステップS22における判定の結果、外周部材222gが移動可能であると判定された場合には(ステップS22:Yes)、走査型電子顕微鏡SEMiは、真空領域VSPを維持するための動作として、外周部材222gを移動する動作を採用する。具体的には、走査型電子顕微鏡SEMiは、Z位置の差分が所望間隔D_targetに対して十分に小さくなるように、外周部材222g(つまり、移動元面又は移動先面)を移動させる(ステップS25)。その結果、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程で、真空領域VSPが適切に維持可能となる。 Specifically, first, the control device 4 determines whether or not the outer peripheral member 222g can move along the Z-axis direction (step S22). When it is determined that the outer peripheral member 222g is movable as a result of the determination in step S22 (step S22: Yes), the scanning electron microscope SEMi performs the outer peripheral member 222g as an operation for maintaining the vacuum region VSP. Adopt the action of moving. Specifically, the scanning electron microscope SEMi moves 222 g of the outer peripheral member (that is, the moving source surface or the moving destination surface) so that the difference in the Z positions is sufficiently smaller than the desired interval D_target (step S25). ). As a result, the vacuum region VSP can be appropriately maintained in the process of switching the state of the beam irradiation device 1 from the non-shelter state to the shunt state or from the shunt state to the non-save state.

この際、走査型電子顕微鏡SEMiは、外周部材222gを移動させた後におけるビーム照射装置1のZ位置と移動元面のZ位置との間の差分が、外周部材222gを移動させた後におけるビーム照射装置1のZ位置と移動先面のZ位置との間の差分よりも小さくなるように、外部部材222gを移動させてもよい。つまり、走査型電子顕微鏡SEMiは、移動元面が移動先面よりも高くなるように、外部部材222gを移動させてもよい。その結果、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程で、ビーム照射装置1と移動先物体との衝突が防止可能となる。 At this time, in the scanning electron microscope SEMi, the difference between the Z position of the beam irradiation device 1 after moving the outer peripheral member 222g and the Z position of the moving source surface is the beam after moving the outer peripheral member 222g. The external member 222g may be moved so as to be smaller than the difference between the Z position of the irradiation device 1 and the Z position of the moving destination surface. That is, in the scanning electron microscope SEMi, the external member 222g may be moved so that the moving source surface is higher than the moving destination surface. As a result, the collision between the beam irradiation device 1 and the moving destination object can be prevented in the process of switching the state of the beam irradiation device 1 from the non-shelter state to the shunt state or from the shunt state to the non-shelter state.

更に、走査型電子顕微鏡SEMiは、外周部材222gを移動させた後における試料Wの表面WSuのZ位置と外周部材222gの上面OSのZ位置との間の差分が、外周部材222gを移動させる前における表面WSuのZ位置と上面OSのZ位置との間の差分よりも小さくなるように、外部部材222gを移動させてもよい。つまり、走査型電子顕微鏡SEMiは、Z軸方向において表面Wuと上面OSとが近づくように、外周部材222gを移動させてもよい。その結果、Z軸方向において表面Wuと上面OSとが遠ざかるように外周部材222gを移動する場合と比較して、Z位置の差分が所望間隔D_targetに対して十分に小さくなる可能性が高くなる。 Further, in the scanning electron microscope SEMi, the difference between the Z position of the surface WSu of the sample W and the Z position of the upper surface OS of the outer peripheral member 222g after moving the outer peripheral member 222g is before the outer peripheral member 222g is moved. The external member 222g may be moved so as to be smaller than the difference between the Z position of the surface WSu and the Z position of the upper surface OS. That is, in the scanning electron microscope SEMi, the outer peripheral member 222g may be moved so that the surface Wu and the upper surface OS come close to each other in the Z-axis direction. As a result, there is a high possibility that the difference in Z positions will be sufficiently smaller than the desired interval D_target, as compared with the case where the outer peripheral member 222g is moved so that the surface Wu and the upper surface OS are separated from each other in the Z-axis direction.

例えば、図31(a)に示すように、移動元面である試料Wの表面WSuが移動先面である外周部材222gの上面OSよりも低い状況下でビーム照射装置1の状態が非待避状態から待避状態へと切り替わる場合には、走査型電子顕微鏡SEMiは、(i)表面Wuと上面OSとが近づいてZ位置の差分が所望間隔D_targetに対して十分に小さくなり、且つ、(ii)外周部材222gの上面OSが試料Wの表面WSuよりも低くなる(つまり、ビーム照射装置1と表面WSuとの間の間隔d31が、ビーム照射装置1と上面OSとの間の間隔d32よりも小さくなる)ように、移動部材222gを下げる。例えば、図31(b)に示すように、移動元面である試料Wの表面WSuが移動先面である外周部材222gの上面OSよりも高い状況下でビーム照射装置1の状態が非待避状態から待避状態へと切り替わる場合には、走査型電子顕微鏡SEMiは、(i)表面Wuと上面OSとが近づいてZ位置の差分が所望間隔D_targetに対して十分に小さくなり、且つ、(ii)外周部材222gの上面OSが試料Wの表面WSuよりも低くなる(つまり、ビーム照射装置1と表面WSuとの間の間隔d41が、ビーム照射装置1と上面OSとの間の間隔d42よりも小さくなる)ように、移動部材222gを上げる。例えば、図32(a)に示すように、移動元面である外周部材222gの上面OSが移動先面である試料Wの表面WSuよりも高い状況下でビーム照射装置1の状態が待避状態から非待避状態へと切り替わる場合には、走査型電子顕微鏡SEMiは、(i)表面Wuと上面OSとが近づいてZ位置の差分が所望間隔D_targetに対して十分に小さくなり、且つ、(ii)試料Wの表面WSuが外周部材222gの上面OSよりも低くなる(つまり、ビーム照射装置1と上面OSとの間の間隔d52が、ビーム照射装置1と表面WSuとの間の間隔d51よりも小さくなる)ように、移動部材222gを下げる。例えば、図32(b)に示すように、移動元面である外周部材222gの上面OSが移動先面である試料Wの表面WSuよりも低い状況下でビーム照射装置1の状態が待避状態から非待避状態へと切り替わる場合には、走査型電子顕微鏡SEMiは、(i)表面Wuと上面OSとが近づいてZ位置の差分が所望間隔D_targetに対して十分に小さくなり、且つ、(ii)試料Wの表面WSuが外周部材222gの上面OSよりも低くなる(つまり、ビーム照射装置1と上面OSとの間の間隔d62が、ビーム照射装置1と表面WSuとの間の間隔d61よりも小さくなる)ように、移動部材222gを上げる。尚、図31(a)から図32(b)では、移動前の外周部材222gが点線で示されており、移動後の外周部材222gが実線で示されている。 For example, as shown in FIG. 31 (a), the state of the beam irradiation device 1 is in a non-shelter state under a situation where the surface WSu of the sample W, which is the moving source surface, is lower than the upper surface OS of the outer peripheral member 222g, which is the moving destination surface. In the case of switching from the to the shunting state, the scanning electron microscope SEMi has (i) that the surface Wu and the upper surface OS approach each other and the difference in the Z position becomes sufficiently smaller than the desired interval D_target, and (ii). The upper surface OS of the outer peripheral member 222 g is lower than the surface WSu of the sample W (that is, the distance d31 between the beam irradiation device 1 and the surface WSu is smaller than the distance d32 between the beam irradiation device 1 and the upper surface OS. The moving member 222g is lowered so as to become). For example, as shown in FIG. 31 (b), the state of the beam irradiation device 1 is in a non-shelter state under a situation where the surface WSu of the sample W, which is the moving source surface, is higher than the upper surface OS of the outer peripheral member 222g, which is the moving destination surface. In the case of switching from the to the shunting state, the scanning electron microscope SEMi has (i) that the surface Wu and the upper surface OS approach each other and the difference in the Z position becomes sufficiently smaller than the desired interval D_target, and (ii). The upper surface OS of the outer peripheral member 222 g is lower than the surface WSu of the sample W (that is, the distance d41 between the beam irradiation device 1 and the surface WSu is smaller than the distance d42 between the beam irradiation device 1 and the upper surface OS. The moving member 222g is raised so as to become). For example, as shown in FIG. 32 (a), the state of the beam irradiator 1 is changed from the retracted state under the condition that the upper surface OS of the outer peripheral member 222 g which is the moving source surface is higher than the surface WSu of the sample W which is the moving destination surface. When switching to the non-reserved state, the scanning electron microscope SEMi has (i) that the surface Wu and the upper surface OS are close to each other, the difference in Z position is sufficiently small with respect to the desired interval D_target, and (ii). The surface WSu of the sample W is lower than the upper surface OS of the outer peripheral member 222 g (that is, the distance d52 between the beam irradiation device 1 and the upper surface OS is smaller than the distance d51 between the beam irradiation device 1 and the surface WSu. The moving member 222g is lowered so as to become). For example, as shown in FIG. 32 (b), the state of the beam irradiator 1 is changed from the retracted state under the condition that the upper surface OS of the outer peripheral member 222 g which is the moving source surface is lower than the surface WSu of the sample W which is the moving destination surface. When switching to the non-reserved state, the scanning electron microscope SEMi has (i) that the surface Wu and the upper surface OS are close to each other, the difference in Z position is sufficiently small with respect to the desired interval D_target, and (ii). The surface WSu of the sample W is lower than the upper surface OS of the outer peripheral member 222 g (that is, the distance d62 between the beam irradiation device 1 and the upper surface OS is smaller than the distance d61 between the beam irradiation device 1 and the surface WSu. The moving member 222g is raised so as to become). In FIGS. 31 (a) to 32 (b), the outer peripheral member 222 g before the movement is shown by a dotted line, and the outer peripheral member 222 g after the movement is shown by a solid line.

他方で、ステップS22における判定の結果、外周部材222gが移動可能でないと判定された場合には(ステップS22:No)、制御装置4は、真空ポンプ51及び52の少なくとも一方の排気速度を上げる(つまり、変更する)ことで、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程で真空領域VSPを維持可能か否かを判定する(ステップS23)。つまり、制御装置4は、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程で真空領域VSPを維持し続けることができる程度に真空ポンプ51及び52の少なくとも一方の排気速度を上げること可能か否かを判定する(ステップS23)。尚、真空ポンプ51及び52の少なくとも一方の排気速度が大きくなればなるほど、真空領域VSPを形成可能な所望間隔D_targetが大きくなる。つまり、真空ポンプ51及び52の少なくとも一方の排気速度が大きくなればなるほど、ビーム照射装置1と試料Wとの間の間隔Dがより大きい状況下で真空領域VSPを形成できる。尚、排気速度は、単位時間当たりに排気される気体の流量に比例するパラメータである。 On the other hand, when it is determined that the outer peripheral member 222g is not movable as a result of the determination in step S22 (step S22: No), the control device 4 increases the exhaust speed of at least one of the vacuum pumps 51 and 52 (step S22: No). That is, by changing), it is determined whether or not the vacuum region VSP can be maintained in the process of switching the state of the beam irradiation device 1 from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state (step S23). ). That is, the control device 4 and the vacuum pump 51 and the vacuum pump 51 can continue to maintain the vacuum region VSP in the process of switching the state of the beam irradiation device 1 from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state. It is determined whether or not it is possible to increase the exhaust speed of at least one of 52 (step S23). The larger the exhaust speed of at least one of the vacuum pumps 51 and 52, the larger the desired interval D_target at which the vacuum region VSP can be formed. That is, as the exhaust speed of at least one of the vacuum pumps 51 and 52 increases, the vacuum region VSP can be formed in a situation where the distance D between the beam irradiation device 1 and the sample W is larger. The exhaust speed is a parameter proportional to the flow rate of the gas exhausted per unit time.

ステップS23における判定の結果、真空ポンプ51及び52の少なくとも一方の排気速度を上げることで真空領域VSPを維持可能である(つまり、真空領域VSPを維持し続けることができる程度に真空ポンプ51及び52の少なくとも一方の排気速度を上げることが可能である)と判定された場合には(ステップS23:Yes)、走査型電子顕微鏡SEMiは、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程で真空領域VSPを維持し続けることができる程度に真空ポンプ51及び52の少なくとも一方の排気速度を上げる(ステップS26)。その結果、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程で、真空領域VSPが適切に維持可能となる。 As a result of the determination in step S23, the vacuum region VSP can be maintained by increasing the exhaust speed of at least one of the vacuum pumps 51 and 52 (that is, the vacuum pumps 51 and 52 can be maintained to the extent that the vacuum region VSP can be maintained. When it is determined (step S23: Yes), the scanning electron microscope SEMi changes the state of the beam irradiation device 1 from the non-evacuation state to the evacuation state. Alternatively, the exhaust speed of at least one of the vacuum pumps 51 and 52 is increased to such an extent that the vacuum region VSP can be maintained in the process of switching from the retracted state to the non-evacuated state (step S26). As a result, the vacuum region VSP can be appropriately maintained in the process of switching the state of the beam irradiation device 1 from the non-shelter state to the shunt state or from the shunt state to the non-save state.

他方で、ステップS23における判定の結果、真空ポンプ51及び52の少なくとも一方の排気速度を上げることで真空領域VSPを維持可能でない(つまり、真空領域VSPを維持し続けることができる程度に真空ポンプ51及び52の少なくとも一方の排気速度を上げることができない)と判定された場合には(ステップS23:No)、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程で、真空領域VSPを形成し続けることができない可能性がある。そこで、この場合には、走査型電子顕微鏡SEMiは、真空領域VSPが破壊されてしまった場合に備えて、遮断部材151d及び152dを電子ビームEBの経路に挿入する(ステップS27)。その結果、ビーム通過空間SPb1のうち遮断部材151d及び152dの少なくとも一方と筐体111とによって囲まれた空間部分が密閉される(ステップS27)。このため、ビーム通過空間SPb1のうちの少なくとも一部の空間部分の真空度が維持される。 On the other hand, as a result of the determination in step S23, the vacuum region VSP cannot be maintained by increasing the exhaust speed of at least one of the vacuum pumps 51 and 52 (that is, the vacuum pump 51 can continue to maintain the vacuum region VSP). When it is determined (step S23: No), the state of the beam irradiation device 1 is changed from the non-evacuated state to the evacuated state or from the evacuated state to the non-evacuated state. In the process of switching to, it may not be possible to continue to form the vacuum region VSP. Therefore, in this case, the scanning electron microscope SEMi inserts the blocking members 151d and 152d into the path of the electron beam EB in case the vacuum region VSP is destroyed (step S27). As a result, a space portion of the beam passing space SPb1 surrounded by at least one of the blocking members 151d and 152d and the housing 111 is sealed (step S27). Therefore, the degree of vacuum of at least a part of the beam passing space SPb1 is maintained.

以上のステップS11からステップS27までの処理が行われた後に、走査型電子顕微鏡SEMiは、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと実際に切り替える(ステップS31)。その結果、走査型電子顕微鏡SEMiは、ビーム照射装置1の状態を非待避状態から待避状態へと又は待避状態から非待避状態へと切り替える過程において、真空領域VSPを形成し続ける可能性がより一層高くなる。 After the processing from step S11 to step S27 is performed, the scanning electron microscope SEMi actually switches the state of the beam irradiation device 1 from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. (Step S31). As a result, the scanning electron microscope SEMi is more likely to continue to form the vacuum region VSP in the process of switching the state of the beam irradiation device 1 from the non-shelter state to the shunt state or from the shunt state to the non-shelter state. It gets higher.

(3−10)第10変形例
続いて、第10変形例における走査型電子顕微鏡SEMjについて説明する。走査型電子顕微鏡SEMjは、上述した走査型電子顕微鏡SEMと比較して、ステージ22に代えてステージ22jを備えているという点で異なっている。走査型電子顕微鏡SEMjのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図33(a)及び図33(b)を参照しながら、第10変形例のステージ22jについて説明する。図33(a)は、第10変形例のステージ22jの構造を示す斜視図であり、図33(b)は、図33(a)の斜視図におけるA−A断面図である。
(3-10) 10th Modified Example Next, the scanning electron microscope SEMj in the 10th modified example will be described. The scanning electron microscope SEMj is different from the scanning electron microscope SEM described above in that the stage 22j is provided instead of the stage 22. Other structures of the scanning electron microscope SEMj may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the stage 22j of the tenth modification will be described with reference to FIGS. 33 (a) and 33 (b). 33 (a) is a perspective view showing the structure of the stage 22j of the tenth modification, and FIG. 33 (b) is a sectional view taken along the line AA in the perspective view of FIG. 33 (a).

図33(a)及び図33(b)に示すように、ステージ22jは、ステージ22と比較して、待避部材223に代えて、待避部材223jを備えているという点において異なる。図34(b)に示すように、ステージ22jは、外周部材222の一部に設けられた凹部に載置される待避部材223jを備える。ステージ22jのその他の構造は、ステージ22のその他の構造と同一であってもよい。 As shown in FIGS. 33 (a) and 33 (b), the stage 22j is different from the stage 22 in that the shunting member 223j is provided instead of the shunting member 223. As shown in FIG. 34 (b), the stage 22j includes a shunting member 223j that is placed in a recess provided in a part of the outer peripheral member 222. The other structure of the stage 22j may be the same as the other structure of the stage 22.

待避部材223jは、待避部材223と比較して、ステージ22jから着脱可能(つまり、離脱可能及び/又は装着可能)であるという点において異なる。待避部材223jは、板部分223j1と、この板部分223j1の上側の複数箇所に設けられた突起部223j2とを備えている。また、ステージ22jに設けられた凹部には、図示なき真空ポンプと連通した配管223j3が設けられている。この配管223j3に連通した真空ポンプは、上述した真空ポンプ51と同程度の排気能力を有していてもよい。尚、図33(a)及び図33(b)の例において、これらの複数の突起部223j2の数は3であるが、複数の突起部223j2の数は3には限定されない。また、複数の突起部223j2のZ軸方向の寸法(高さ)は、数μm程度であってよい。 The retreat member 223j differs from the retreat member 223 in that it is removable (that is, detachable and / or mountable) from the stage 22j. The shunting member 223j includes a plate portion 223j1 and protrusions 223j2 provided at a plurality of locations on the upper side of the plate portion 223j1. Further, in the recess provided in the stage 22j, a pipe 223j3 communicating with a vacuum pump (not shown) is provided. The vacuum pump communicating with the pipe 223j3 may have the same exhaust capacity as the vacuum pump 51 described above. In the examples of FIGS. 33 (a) and 33 (b), the number of the plurality of protrusions 223j2 is 3, but the number of the plurality of protrusions 223j2 is not limited to 3. Further, the dimension (height) of the plurality of protrusions 223j2 in the Z-axis direction may be about several μm.

続いて、図34(a)から図34(d)を参照しながら、待避部材223jによる真空領域VSPを維持する動作の流れについて説明する。試料Wを計測しているとき(つまり、ステージ22jが試料Wを保持している期間の少なくとも一部)では、図34(a)に示すように、ビーム照射装置1は、試料Wに対向した状態で、試料Wとの間に真空領域VSPを形成している。試料Wの計測が完了した後、図34(b)に示すように、ステージ駆動系23は、XY平面に沿ってステージ22jを移動して、ビーム照射装置1の射出面121LSを待避部材223jと対向させる。このとき、ビーム照射装置1の射出面121LSと、待避部材223jの板部分223j1とのZ軸方向に沿った間隔は、射出面121LSと板部分223j1との間に局所的な真空領域VSPが形成される程度の間隔、典型的には10μm程度である。ここで、配管223j3を介して真空ポンプによる排気が行われているため、待避部材223jの板部分223j1は、ビーム照射装置1に引き寄せられない。配管223j3を介した真空ポンプによる排気は、局所的な真空領域VSPを形成するための排気速度よりも高い排気速度であってもよい。 Subsequently, the flow of the operation of maintaining the vacuum region VSP by the shunting member 223j will be described with reference to FIGS. 34 (a) to 34 (d). When measuring the sample W (that is, at least a part of the period in which the stage 22j holds the sample W), the beam irradiation device 1 faces the sample W as shown in FIG. 34 (a). In this state, a vacuum region VSP is formed between the sample W and the sample W. After the measurement of the sample W is completed, as shown in FIG. 34 (b), the stage drive system 23 moves the stage 22j along the XY plane, and the injection surface 121LS of the beam irradiation device 1 is combined with the shunting member 223j. Make them face each other. At this time, the distance between the injection surface 121LS of the beam irradiation device 1 and the plate portion 223j1 of the shunting member 223j along the Z-axis direction is such that a local vacuum region VSP is formed between the injection surface 121LS and the plate portion 223j1. The interval is about 10 μm. Here, since the exhaust is performed by the vacuum pump through the pipe 223j3, the plate portion 223j1 of the shunting member 223j is not attracted to the beam irradiation device 1. The exhaust by the vacuum pump through the pipe 223j3 may have an exhaust rate higher than the exhaust rate for forming the local vacuum region VSP.

その後、図34(c)に示すように、間隔制御系14及びステージ駆動系23の少なくとも一方により、ビーム照射装置1の射出面121LSと複数の突起部分223j2とが接触するように、射出面121LSと待避部材223jとの間隔が調整される。射出面121LSと複数の突起部分223j2とが接触した後、配管223j3を介した排気の排気速度を低め、待避部材223jをビーム照射装置1の射出面121LSに真空吸着させる。その後、図34(d)に示すように、間隔制御系14及びステージ駆動系23の少なくとも一方により、ビーム照射装置1の射出面121LSとステージ22jとの間隔を広げる。この動作の後、ステージ22jを移動させて、例えば、試料Wの搬入位置又は搬出位置に位置させる。 After that, as shown in FIG. 34 (c), the injection surface 121LS of the beam irradiation device 1 and the plurality of protrusions 223j2 are brought into contact with each other by at least one of the interval control system 14 and the stage drive system 23. The distance between the and the shunt member 223j is adjusted. After the injection surface 121LS and the plurality of protruding portions 223j2 come into contact with each other, the exhaust speed of the exhaust gas through the pipe 223j3 is reduced, and the retreat member 223j is vacuum-sucked to the injection surface 121LS of the beam irradiation device 1. After that, as shown in FIG. 34D, at least one of the interval control system 14 and the stage drive system 23 increases the interval between the injection surface 121LS of the beam irradiation device 1 and the stage 22j. After this operation, the stage 22j is moved to, for example, to be positioned at the loading position or the loading position of the sample W.

図33(a)から図34(d)に示す例では、待避部材223jの複数の突起部分223j2によって、待避部材223jの板部分223j1と射出面121LSとの間に、突起部分223j2の高さによって決まる間隙が形成される。この間隙の間隔は、数μm程度であるため、板部分223j1とビーム照射装置1の射出面121LSとの間には局所的な真空領域VSPが維持され続ける。 In the example shown in FIGS. 33 (a) to 34 (d), the height of the protrusion 223j2 between the plate portion 223j1 and the injection surface 121LS of the relief member 223j is caused by the plurality of protrusions 223j2 of the relief member 223j. A determined gap is formed. Since the distance between the gaps is about several μm, the local vacuum region VSP continues to be maintained between the plate portion 223j1 and the injection surface 121LS of the beam irradiation device 1.

このようなステージ22jを備える走査型電子顕微鏡SEMjにおいても、上述した走査型電子顕微鏡SEMが享受可能な効果と同様の効果が享受可能となる。更に、走査型電子顕微鏡SEMjにおいても、第8変形例の走査型電子顕微鏡SEMhと同様に、待避部材223jと独立して試料Wを保持するステージ22jが移動可能であるため、ステージ22jの移動時の制約、例えば真空領域VSPを常に待避部材223jの上面ES上に位置させなくてはならないという制約を少なくすることが可能である。 Even in the scanning electron microscope SEMj provided with such a stage 22j, the same effects as those that can be enjoyed by the scanning electron microscope SEM described above can be enjoyed. Further, in the scanning electron microscope SEMj as well, as in the scanning electron microscope SEMh of the eighth modification, the stage 22j that holds the sample W independently of the relief member 223j can be moved, so that when the stage 22j is moved. For example, it is possible to reduce the restriction that the vacuum region VSP must always be positioned on the upper surface ES of the retreat member 223j.

(3−11)第11変形例
続いて、第11変形例における走査型電子顕微鏡SEMkについて説明する。走査型電子顕微鏡SEMkは、上述した走査型電子顕微鏡SEMと比較して、ステージ22に代えてステージ22kを備えているという点で異なっている。走査型電子顕微鏡SEMkのその他の構造は、走査型電子顕微鏡SEMと同一であってもよい。このため、以下では、図35(a)及び図35(b)を参照しながら、第11変形例のステージ22kについて説明する。図35(a)及び図35(b)の夫々は、第11変形例のステージ22kの構造を示す断面図である。
(3-11) Eleventh Modified Example Next, the scanning electron microscope SEMk in the eleventh modified example will be described. The scanning electron microscope SEMk is different from the scanning electron microscope SEM described above in that the stage 22k is provided instead of the stage 22. Other structures of the scanning electron microscope SEMk may be the same as those of the scanning electron microscope SEM. Therefore, in the following, the stage 22k of the eleventh modification will be described with reference to FIGS. 35 (a) and 35 (b). 35 (a) and 35 (b) are cross-sectional views showing the structure of the stage 22k of the eleventh modification.

図35(a)及び図35(b)に示すように、ステージ22kは、ステージ22と比較して、外周部材222及び待避部材223に代えて、外周部材222k及び待避部材223kを備えているという点において異なる。ステージ22kのその他の構造は、ステージ22のその他の構造と同一であってもよい。 As shown in FIGS. 35 (a) and 35 (b), the stage 22k is said to include the outer peripheral member 222k and the shunting member 223k in place of the outer peripheral member 222 and the shunting member 223 as compared with the stage 22. Different in that. The other structure of the stage 22k may be the same as the other structure of the stage 22.

外周部材222kは、外周部材222と比較して、待避部材223を含んでいなくてもよいという点において異なる。外周部材222kのその他の構造は、外周部材222のその他の構造と同一であってもよい。 The outer peripheral member 222k is different from the outer peripheral member 222 in that it does not have to include the shunting member 223. The other structure of the outer peripheral member 222k may be the same as the other structure of the outer peripheral member 222.

待避部材223kは、待避部材223と比較して、外周部材222の外側において跳ね上げ可能に設けられているという点において異なる。例えば、図35(a)に示すように、待避部材223kは、外周部材222kの側方に設けられていてもよい。待避部材223kの状態は、その上面ESが試料Wの表面WSuとほぼ一致するように跳ね上げられた状態と、その上面ESが側方を向くように折りたたまれた状態との間で切り替え可能であってもよい。待避部材223k上に局所的な真空領域VSPが位置する待避状態において、図35(a)に示すように、待避部材223kはその上面ESが試料Wの表面WSuとほぼ一致するように跳ね上げられた状態に設定される。また、待避状態と異なる状態において、待避部材223kは、図35(b)に示すように、その上面ESが側方を向く格納状態に設定される。この図35(a)及び図35(b)の例においては、待避部材223kに起因するステージ22kのストロークが制限される不都合を少なくすることが可能である。 The retreat member 223k is different from the retreat member 223 in that it is provided so as to be flipped up on the outside of the outer peripheral member 222. For example, as shown in FIG. 35 (a), the shunting member 223k may be provided on the side of the outer peripheral member 222k. The state of the siding member 223k can be switched between a state in which the upper surface ES is flipped up so as to substantially coincide with the surface WSu of the sample W and a state in which the upper surface ES is folded so as to face sideways. There may be. In the shunting state where the local vacuum region VSP is located on the shunting member 223k, as shown in FIG. 35 (a), the shunting member 223k is flipped up so that its upper surface ES substantially coincides with the surface WSu of the sample W. Is set to the state. Further, in a state different from the shunting state, the shunting member 223k is set to a retracted state in which the upper surface ES faces sideways as shown in FIG. 35 (b). In the examples of FIGS. 35 (a) and 35 (b), it is possible to reduce the inconvenience that the stroke of the stage 22k is limited due to the shunting member 223k.

このようなステージ22kを備える走査型電子顕微鏡SEMkにおいても、上述した走査型電子顕微鏡SEMが享受可能な効果と同様の効果が享受可能となる。 Even in the scanning electron microscope SEMk provided with such a stage 22k, the same effects as those that can be enjoyed by the scanning electron microscope SEM described above can be enjoyed.

(3−12)第12変形例
続いて、図36を参照しながら、第12変形例の走査型電子顕微鏡SEMlについて説明する。図36は、第12変形例の走査型電子顕微鏡SEMlの構造を示す断面図である。
(3-12) 12th Modified Example Next, the scanning electron microscope SEMl of the 12th modified example will be described with reference to FIG. 36. FIG. 36 is a cross-sectional view showing the structure of the scanning electron microscope SEMl of the twelfth modification.

図36に示すように、第12変形例の走査型電子顕微鏡SEMlは、上述した走査型電子顕微鏡SEMと比較して、光学顕微鏡17lを備えているという点で異なる。走査型電子顕微鏡SEMlのその他の構造は、上述した走査型電子顕微鏡SEMのその他の構造と同一であってもよい。 As shown in FIG. 36, the scanning electron microscope SEMl of the twelfth modification is different in that it includes an optical microscope 17l as compared with the scanning electron microscope SEM described above. The other structure of the scanning electron microscope SEMl may be the same as the other structure of the scanning electron microscope SEM described above.

光学顕微鏡17lは、試料Wの状態(例えば、試料Wの表面WSuの少なくとも一部の状態)を光学的に計測可能な装置である。つまり、光学顕微鏡17lは、試料Wの状態を光学的に計測して、試料Wに関する情報を取得可能な装置である。特に、光学顕微鏡17lは、試料Wの状態を大気圧環境下で計測可能であるという点で、試料Wの状態を真空環境下で計測するビーム照射装置1(特に、電子検出器116)とは異なる。 The optical microscope 17l is an apparatus capable of optically measuring the state of the sample W (for example, the state of at least a part of the surface WSu of the sample W). That is, the optical microscope 17l is an apparatus capable of optically measuring the state of the sample W and acquiring information on the sample W. In particular, the optical microscope 17l is different from the beam irradiation device 1 (particularly, the electron detector 116) for measuring the state of the sample W in a vacuum environment in that the state of the sample W can be measured in an atmospheric pressure environment. different.

光学顕微鏡17lは、ビーム照射装置1が電子ビームEBを試料Wに照射して試料Wの状態を計測する前に、試料Wの状態を計測する。つまり、走査型電子顕微鏡SEMlは、光学顕微鏡17lを用いて試料Wの状態を計測した後に、ビーム照射装置1を用いて試料Wの状態を計測する。ここで、光学顕微鏡17lが大気圧環境下で試料Wの状態を計測可能であるため、光学顕微鏡17lが試料Wの状態を計測している期間中は、ビーム照射装置1は、真空領域VSPを形成しなくてもよい。一方で、ビーム照射装置1は、光学顕微鏡17lが試料Wの状態の計測を完了した後に、真空領域VSPを形成して試料Wに電子ビームEBを照射する。 The optical microscope 17l measures the state of the sample W before the beam irradiation device 1 irradiates the sample W with the electron beam EB and measures the state of the sample W. That is, the scanning electron microscope SEMl measures the state of the sample W using the optical microscope 17l and then measures the state of the sample W using the beam irradiation device 1. Here, since the optical microscope 17l can measure the state of the sample W under the atmospheric pressure environment, the beam irradiating device 1 sets the vacuum region VSP during the period when the optical microscope 17l is measuring the state of the sample W. It does not have to be formed. On the other hand, the beam irradiation device 1 forms a vacuum region VSP and irradiates the sample W with the electron beam EB after the optical microscope 17l completes the measurement of the state of the sample W.

ステージ22は、ビーム照射装置1が電子ビームEBを試料Wに照射する期間中は、ビーム照射装置1が電子ビームEBを照射可能な位置に試料Wが位置するように移動してもよい。ステージ22は、電子顕微鏡17lが試料Wの状態を計測する期間中は、光学顕微鏡17lが試料Wの状態を計測可能な位置試料Wが位置するように移動してもよい。ステージ22は、ビーム照射装置1が電子ビームEBを照射可能な位置と、光学顕微鏡17lが計測可能な位置との間で移動してもよい。 The stage 22 may be moved so that the sample W is located at a position where the beam irradiation device 1 can irradiate the electron beam EB while the beam irradiation device 1 irradiates the sample W with the electron beam EB. The stage 22 may be moved so that the position sample W where the optical microscope 17l can measure the state of the sample W is located while the electron microscope 17l measures the state of the sample W. The stage 22 may move between a position where the beam irradiation device 1 can irradiate the electron beam EB and a position where the optical microscope 17l can measure.

走査型電子顕微鏡SEMlは、光学顕微鏡17lを用いた試料Wの状態の計測結果に基づいて、ビーム照射装置1を用いて試料Wの状態を計測してもよい。例えば、走査型電子顕微鏡SEMlは、まず、光学顕微鏡17lを用いて、試料Wのうちの所望領域の状態を計測してもよい。その後、走査型電子顕微鏡SEMlは、光学顕微鏡17lを用いた試料Wの所望領域の状態の計測結果に基づいて、ビーム照射装置1を用いて試料Wの同じ所望領域の状態(或いは、所望領域とは異なる領域の状態)を計測してもよい。この場合、試料Wの所望領域には、ビーム照射装置1を用いた試料Wの状態の計測のために利用可能な所定の指標物が形成されていてもよい。所定の指標物の一例として、例えば、試料Wとビーム照射装置1との位置合わせに用いられるマーク(例えば、フィデュシャルマーク及びアライメントマークの少なくとも一方)があげられる。 The scanning electron microscope SEMl may measure the state of the sample W using the beam irradiation device 1 based on the measurement result of the state of the sample W using the optical microscope 17l. For example, the scanning electron microscope SEMl may first measure the state of a desired region of the sample W using an optical microscope 17l. After that, the scanning electron microscope SEMl uses the beam irradiation device 1 to obtain the same desired region state (or desired region) of the sample W based on the measurement result of the desired region state of the sample W using the optical microscope 17l. May measure the state of different regions). In this case, a predetermined index object that can be used for measuring the state of the sample W using the beam irradiation device 1 may be formed in the desired region of the sample W. As an example of a predetermined index object, for example, a mark used for aligning the sample W and the beam irradiation device 1 (for example, at least one of a fiducial mark and an alignment mark) can be mentioned.

或いは、上述したように、試料Wの表面WSuには、微細な凹凸パターンが形成されている。例えば、試料Wが半導体基板である場合には、微細な凹凸パターンの一例として、レジストが塗布された半導体基板が露光装置によって露光され且つ現像装置によって現像された後に半導体基板に残るレジストパターンがあげられる。この場合、例えば、走査型電子顕微鏡SEMlは、まず、光学顕微鏡17lを用いて、試料Wのうちの所望領域に形成された凹凸パターンの状態を計測してもよい。その後、走査型電子顕微鏡SEMlは、光学顕微鏡17lを用いた試料Wの所望領域の状態の計測結果(つまり、所望領域に形成された凹凸パターンの状態の計測結果)に基づいて、ビーム照射装置1を用いて試料Wの同じ所望領域に形成された凹凸パターンの状態を計測してもよい。例えば、走査型電子顕微鏡SEMlは、光学顕微鏡17lの計測結果に基づいて、凹凸パターンの計測に最適な電子ビームEBが照射されるように電子ビームEBの特性を制御した上で、ビーム照射装置1を用いて試料Wの同じ所望領域に形成された凹凸パターンの状態を計測してもよい。 Alternatively, as described above, a fine uneven pattern is formed on the surface WSu of the sample W. For example, when the sample W is a semiconductor substrate, an example of a fine uneven pattern is a resist pattern that remains on the semiconductor substrate after the semiconductor substrate coated with the resist is exposed by the exposure apparatus and developed by the developing apparatus. Be done. In this case, for example, the scanning electron microscope SEMl may first measure the state of the uneven pattern formed in the desired region of the sample W by using the optical microscope 17l. After that, the scanning electron microscope SEMl uses the optical microscope 17l to measure the state of the desired region of the sample W (that is, the measurement result of the state of the uneven pattern formed in the desired region), and then the beam irradiation device 1 May be used to measure the state of the uneven pattern formed in the same desired region of the sample W. For example, the scanning electron microscope SEMl controls the characteristics of the electron beam EB so that the optimum electron beam EB for measuring the unevenness pattern is irradiated based on the measurement result of the optical microscope 17l, and then the beam irradiation device 1 May be used to measure the state of the uneven pattern formed in the same desired region of the sample W.

このような第12変形例の走査型電子顕微鏡SEMlは、走査型電子顕微鏡SEMが享受可能な効果と同様の効果を享受することができる。加えて、第12変形例の走査型電子顕微鏡SEMlは、光学顕微鏡17lを備えていない比較例の走査型電子顕微鏡と比較して、電子ビームEBを用いて試料Wの状態をより適切に計測することができる。 The scanning electron microscope SEMl of the twelfth modification can enjoy the same effects as those that can be enjoyed by the scanning electron microscope SEM. In addition, the scanning electron microscope SEMl of the twelfth modified example more appropriately measures the state of the sample W using the electron beam EB as compared with the scanning electron microscope of the comparative example not provided with the optical microscope 17l. be able to.

尚、上述した説明では、走査型電子顕微鏡SEMlは、光学顕微鏡17lを用いて試料Wの状態を計測した後に、ビーム照射装置1を用いて試料Wの状態を計測している。しかしながら、走査型電子顕微鏡SEMlは、光学顕微鏡17lを用いた試料Wの状態の計測と、ビーム照射装置1を用いた試料Wの状態の計測とを並行して行ってもよい。例えば、走査型電子顕微鏡SEMlは、試料Wの所望領域の状態を、光学顕微鏡17l及びビーム照射装置1を用いて同時に計測してもよい。或いは、走査型電子顕微鏡SEMlは、光学顕微鏡17lを用いた試料Wの第1領域の状態の計測と、ビーム照射装置1を用いた試料Wの第2領域(但し、第2領域は第1領域とは異なる)の状態の計測とを並行して行ってもよい。 In the above description, the scanning electron microscope SEMl measures the state of the sample W using the optical microscope 17l and then measures the state of the sample W using the beam irradiation device 1. However, in the scanning electron microscope SEMl, the measurement of the state of the sample W using the optical microscope 17l and the measurement of the state of the sample W using the beam irradiation device 1 may be performed in parallel. For example, the scanning electron microscope SEMl may simultaneously measure the state of the desired region of the sample W by using the optical microscope 17l and the beam irradiation device 1. Alternatively, the scanning electron microscope SEMl measures the state of the first region of the sample W using the optical microscope 17l and the second region of the sample W using the beam irradiation device 1 (however, the second region is the first region). The measurement of the state (different from) may be performed in parallel.

また、走査型電子顕微鏡SEMlは、光学顕微鏡17lに加えて又は代えて、大気圧環境下で試料Wの状態を計測可能な任意の計測装置を備えていてもよい。任意の計測装置の一例として、回折干渉計があげられる。尚、回折干渉計は、例えば、光源光を分岐して計測光及び参照光を生成し、計測光を試料Wに照射して発生する反射光(或いは、透過光又は散乱光)と参照光とが干渉することで発生する干渉パターンを検出して試料Wの状態を計測する計測装置である。尚、任意の計測装置の他の一例として、スキャトロメータが挙げられる。スキャトロメータは、試料Wに計測光を照射して、試料Wからの散乱光(回折光等)を受光して試料Wの状態を計測する計測装置である。 Further, the scanning electron microscope SEMl may be provided with an arbitrary measuring device capable of measuring the state of the sample W in an atmospheric pressure environment in addition to or in place of the optical microscope 17l. An example of an arbitrary measuring device is a diffraction interferometer. The diffraction interferometer, for example, branches the light source light to generate measurement light and reference light, and irradiates the sample W with the measurement light to generate reflected light (or transmitted light or scattered light) and reference light. This is a measuring device that detects the interference pattern generated by the interference of light and measures the state of the sample W. In addition, as another example of the arbitrary measuring device, a scattrometer can be mentioned. The scatometer is a measuring device that irradiates the sample W with measurement light, receives scattered light (diffracted light, etc.) from the sample W, and measures the state of the sample W.

また、上述した走査型電子顕微鏡SEMlの説明では、走査型電子顕微鏡SEMが光学顕微鏡17lを備えていることになっている。しかしながら第1変形例の走査型電子顕微鏡SEMaから第11変形例の走査型電子顕微鏡SEMk(更には、後述する第13変形例の走査型電子顕微鏡SEMm)のそれぞれが光学顕微鏡17lを備えていてもよい。 Further, in the above description of the scanning electron microscope SEMl, the scanning electron microscope SEM is supposed to include an optical microscope 17l. However, even if each of the scanning electron microscope SEMa of the first modification to the scanning electron microscope SEMk of the eleventh modification (furthermore, the scanning electron microscope SEMm of the thirteenth modification described later) is equipped with an optical microscope 17l. Good.

(3−13)第13変形例
続いて、図37を参照しながら、第13変形例の走査型電子顕微鏡SEMmについて説明する。図37は、第13変形例の走査型電子顕微鏡SEMmの構造を示す断面図である。
(3-13) 13th Modification Example Next, the scanning electron microscope SEMm of the 13th modification will be described with reference to FIG. 37. FIG. 37 is a cross-sectional view showing the structure of the scanning electron microscope SEMm of the thirteenth modification.

図37に示すように、第13変形例の走査型電子顕微鏡SEMmは、上述した走査型電子顕微鏡SEMと比較して、チャンバ181mと、空調機182mとを備えているという点で異なる。走査型電子顕微鏡SEMmのその他の構造は、上述した走査型電子顕微鏡SEMのその他の構造と同一であってもよい。 As shown in FIG. 37, the scanning electron microscope SEMm of the thirteenth modification is different from the scanning electron microscope SEM described above in that it includes a chamber 181 m and an air conditioner 182 m. The other structure of the scanning electron microscope SEMm may be the same as the other structure of the scanning electron microscope SEM described above.

チャンバ181mは、少なくともビーム照射装置1と、ステージ装置2と、支持フレーム3とを収容する。但し、チャンバ181mは、ビーム照射装置1、ステージ装置2及び支持フレーム3の少なくとも一部を収容していなくてもよい。チャンバ181mは、走査型電子顕微鏡SEMmが備えるその他の構成要件(例えば、位置計測装置15、制御装置4及びポンプ系5の少なくとも一部)を収容していてもよい。 The chamber 181 m accommodates at least the beam irradiation device 1, the stage device 2, and the support frame 3. However, the chamber 181m does not have to accommodate at least a part of the beam irradiation device 1, the stage device 2, and the support frame 3. The chamber 181 m may accommodate other components of the scanning electron microscope SEMm (eg, at least a portion of the position measuring device 15, the control device 4 and the pump system 5).

チャンバ181mの外部の空間は、例えば、大気圧空間である。チャンバ181mの内部の空間(つまり、少なくともビーム照射装置1と、ステージ装置2と、支持フレーム3とを収容する空間)もまた、例えば、大気圧空間である。この場合、少なくともビーム照射装置1と、ステージ装置2と、支持フレーム3とは、大気圧空間に配置される。但し、上述したように、チャンバ181mの内部の大気圧空間内に、ビーム照射装置1が局所的な真空領域VSPを形成する。 The space outside the chamber 181 m is, for example, an atmospheric pressure space. The space inside the chamber 181 m (that is, the space that accommodates at least the beam irradiation device 1, the stage device 2, and the support frame 3) is also, for example, an atmospheric pressure space. In this case, at least the beam irradiation device 1, the stage device 2, and the support frame 3 are arranged in the atmospheric pressure space. However, as described above, the beam irradiator 1 forms a local vacuum region VSP in the atmospheric pressure space inside the chamber 181 m.

空調機182mは、チャンバ181mの内部の空間に気体(例えば、上述した不活性ガス及びクリーンドライエアーの少なくとも一方)を供給可能である。空調機182mは、チャンバ181mの内部の空間から気体を回収可能である。空調機182mがチャンバ181mの内部の空間から気体を回収することで、チャンバ181mの内部の空間の清浄度が良好に保たれる。この際、空調機182mは、チャンバ181mの内部の空間に供給する気体の温度及び湿度の少なくとも一方を制御することで、チャンバ181mの内部の空間の温度及び湿度の少なくとも一方を制御可能である。 The air conditioner 182 m can supply a gas (for example, at least one of the above-mentioned inert gas and clean dry air) to the space inside the chamber 181 m. The air conditioner 182 m can recover gas from the space inside the chamber 181 m. Since the air conditioner 182m recovers the gas from the space inside the chamber 181m, the cleanliness of the space inside the chamber 181m is kept good. At this time, the air conditioner 182m can control at least one of the temperature and humidity of the space inside the chamber 181m by controlling at least one of the temperature and humidity of the gas supplied to the space inside the chamber 181m.

このような第13変形例の走査型電子顕微鏡SEMmは、走査型電子顕微鏡SEMが享受可能な効果と同様の効果を享受することができる。 The scanning electron microscope SEMm of the thirteenth modification can enjoy the same effects as those that can be enjoyed by the scanning electron microscope SEM.

尚、上述した走査型電子顕微鏡SEMmの説明では、走査型電子顕微鏡SEMがチャンバ181m及び空調機182mを備えていることになっている。しかしながら第1変形例の走査型電子顕微鏡SEMaから第12変形例の走査型電子顕微鏡SEMlのそれぞれがチャンバ181m及び空調機182mを備えていてもよい。 In the above description of the scanning electron microscope SEMm, the scanning electron microscope SEM includes a chamber 181 m and an air conditioner 182 m. However, each of the scanning electron microscope SEMa of the first modification to the scanning electron microscope SEMl of the twelfth modification may be provided with a chamber 181 m and an air conditioner 182 m.

(3−14)第14変形例
上述した説明では、試料Wは、真空領域VSPが試料Wの表面WSuのうちの一部しか覆うことができない程度に大きいサイズを有している。一方で、第14変形例では、第14変形例においてステージ22が試料Wを保持する様子を示す断面図である図38に示すように、試料Wは、真空領域VSPが試料Wの表面WSuの全体を覆うことができる程度に小さいサイズを有していてもよい。或いは、試料Wは、真空領域VSPに含まれるビーム通過空間SPb3が試料Wの表面WSuの全体を覆うことができる程度に小さいサイズを有していてもよい。この場合、図38に示すように、差動排気系12が形成する真空領域VSPは、試料Wの表面WSuを覆う及び/又は試料Wの表面WSuに面する(つまり、接する)ことに加えて、ステージ22の表面(例えば、ステージ22の表面のうち保持面HSとは異なる外周面OS)の少なくとも一部を覆っていてもよい及び/又はステージ22の表面(例えば、外周面OS)の少なくとも一部に面していてもよい。外周面OSは、典型的には、保持面HSの周囲に位置する面を含む。尚、図38は、説明の便宜上、走査型電子顕微鏡SEMが、第14変形例で説明しているサイズが小さい試料Wに電子ビームEBを照射する例を示しているが、第1変形例の走査型電子顕微鏡SEMaから第13変形例の走査型電子顕微鏡SEMmのそれぞれもまた、第14変形例で説明しているサイズが小さい試料Wに電子ビームEBを照射してもよいことはいうまでもない。
(3-14) 14th Modified Example In the above description, the sample W has a size large enough that the vacuum region VSP can cover only a part of the surface WSu of the sample W. On the other hand, in the 14th modification, as shown in FIG. 38, which is a cross-sectional view showing how the stage 22 holds the sample W in the 14th modification, in the sample W, the vacuum region VSP is the surface WSu of the sample W. It may have a size small enough to cover the whole. Alternatively, the sample W may have a size small enough that the beam passing space SPb3 included in the vacuum region VSP can cover the entire surface WSu of the sample W. In this case, as shown in FIG. 38, the vacuum region VSP formed by the differential exhaust system 12 covers the surface WSu of the sample W and / or faces (that is, touches) the surface WSu of the sample W. , At least a part of the surface of the stage 22 (for example, the outer peripheral surface OS of the surface of the stage 22 different from the holding surface HS) and / or at least the surface of the stage 22 (for example, the outer peripheral surface OS). It may face a part. The outer peripheral surface OS typically includes a surface located around the holding surface HS. Note that FIG. 38 shows an example in which the scanning electron microscope SEM irradiates the small-sized sample W described in the 14th modification with the electron beam EB for convenience of explanation. Needless to say, each of the scanning electron microscope SEMa to the scanning electron microscope SEMm of the thirteenth modification may also irradiate the small sample W described in the fourteenth modification with the electron beam EB. Absent.

第14変形例では、走査型電子顕微鏡SEMは、ビーム射出装置1の射出面121LSと試料Wの表面WSuとの間の間隔Dが所望間隔D_targetとなることに代えて、射出面121LSとステージ22の表面(例えば、外周面OS)との間の間隔Do1が所望間隔D_targetとなるように、間隔調整系14及びステージ駆動系23の少なくとも一方を制御してもよい。 In the 14th modification, in the scanning electron microscope SEM, the distance D between the injection surface 121LS of the beam injection device 1 and the surface WSu of the sample W is the desired distance D_taget, but the injection surface 121LS and the stage 22. At least one of the spacing adjustment system 14 and the stage drive system 23 may be controlled so that the spacing Do1 between the two surfaces (for example, the outer peripheral surface OS) becomes the desired spacing D_target.

(3−15)第15変形例
上述した第14変形例では、ステージ22の保持面HSとステージ22の外周面OSとが同じ高さに位置していた。一方で、第15変形例では、第15変形例においてステージ22が試料Wを保持する様子を示す断面図である図39に示すように、保持面HSと外周面OSとが異なる高さ(つまり、Z軸方向において異なる位置)に位置していてもよい。図38は、保持面HSが外周面OSよりも低い位置に位置する例を示しているが、保持面HSが外周面OSよりも高い位置に位置していてもよい。保持面HSが外周面OSよりも低い位置に位置する場合には、ステージ22には、実質的には、試料Wが収容される収容空間(つまり、試料Wを収容できるように窪んだ空間)が形成されていると言える。また、図38は、外周面OSが試料Wの表面WSuよりも高い位置に位置する例を示しているが、外周面OSが表面WSuよりも低い位置に位置していてもよいし、外周面OSが表面WSuと同じ高さに位置していてもよい。尚、図39は、説明の便宜上、走査型電子顕微鏡SEMが、第15変形例で説明した外周面OSとは高さが異なる保持面HSに保持された試料Wに電子ビームEBを照射する例を示しているが、第1変形例の走査型電子顕微鏡SEMaから第13変形例の走査型電子顕微鏡SEMmのそれぞれもまた、第15変形例で説明した外周面OSとは高さが異なる保持面HSに保持された試料Wに電子ビームEBを照射してもよいことはいうまでもない。
(3-15) 15th Modification Example In the 14th modification described above, the holding surface HS of the stage 22 and the outer peripheral surface OS of the stage 22 were located at the same height. On the other hand, in the fifteenth modification, as shown in FIG. 39, which is a cross-sectional view showing how the stage 22 holds the sample W in the fifteenth modification, the holding surface HS and the outer peripheral surface OS have different heights (that is, the outer peripheral surface OS). , Different positions in the Z-axis direction). FIG. 38 shows an example in which the holding surface HS is located at a position lower than the outer peripheral surface OS, but the holding surface HS may be located at a position higher than the outer peripheral surface OS. When the holding surface HS is located at a position lower than the outer peripheral surface OS, the stage 22 is substantially a storage space in which the sample W is housed (that is, a space recessed so as to house the sample W). Can be said to have been formed. Further, although FIG. 38 shows an example in which the outer peripheral surface OS is located at a position higher than the surface WSu of the sample W, the outer peripheral surface OS may be located at a position lower than the surface WSu, or the outer peripheral surface. The OS may be located at the same height as the surface WSu. In FIG. 39, for convenience of explanation, an example in which the scanning electron microscope SEM irradiates the sample W held on the holding surface HS having a height different from that of the outer peripheral surface OS described in the 15th modification by irradiating the electron beam EB. However, each of the scanning electron microscope SEMa of the first modification to the scanning electron microscope SEMm of the thirteenth modification also has a holding surface different in height from the outer peripheral surface OS described in the fifteenth modification. Needless to say, the sample W held in the HS may be irradiated with the electron beam EB.

第15変形例では、第14変形例と同様に、試料Wは、真空領域VSPが試料Wの表面WSuの全体を覆うことができる程度に小さいサイズを有していてもよい。この場合、第14変形例と同様に、差動排気系12が形成する真空領域VSPは、試料Wの表面WSuを覆う及び/又は試料Wの表面WSuに面することに加えて、ステージ22の表面(例えば、外周面OS)の少なくとも一部を覆っていてもよい及び/又はステージ22の表面(例えば、外周面OS)の少なくとも一部に面していてもよい。或いは、試料Wは、真空領域VSPが試料Wの表面WSuのうちの一部しか覆うことができない程度に大きいサイズを有していてもよい。この場合、差動排気系12が形成する真空領域VSPは、試料Wの表面WSuの一部を覆う及び/又は試料Wの表面WSuの一部に面する一方で、ステージ22の表面(例えば、外周面OS)の少なくとも一部を覆っていなくてもよい及び/又はステージ22の表面(例えば、外周面OS)の少なくとも一部に面していなくてもよい。 In the fifteenth modification, as in the fourteenth modification, the sample W may have a size small enough that the vacuum region VSP can cover the entire surface WSu of the sample W. In this case, as in the 14th modification, the vacuum region VSP formed by the differential exhaust system 12 covers the surface WSu of the sample W and / or faces the surface WSu of the sample W, and in addition, the stage 22 It may cover at least a portion of the surface (eg, the outer peripheral OS) and / or may face at least a portion of the surface of the stage 22 (eg, the outer peripheral OS). Alternatively, the sample W may have a size large enough that the vacuum region VSP can cover only a part of the surface WSu of the sample W. In this case, the vacuum region VSP formed by the differential exhaust system 12 covers a part of the surface WSu of the sample W and / or faces a part of the surface WSu of the sample W while facing the surface of the stage 22 (eg, the surface WSu). It does not have to cover at least a part of the outer peripheral surface OS) and / or may not face at least a part of the surface of the stage 22 (for example, the outer peripheral surface OS).

第15変形例においても、第14変形例と同様に、走査型電子顕微鏡SEMは、射出面121LSと表面WSuとの間の間隔Dが所望間隔D_targetとなることに代えて、射出面121LSとステージ22の表面(例えば、外周面OS)との間の間隔Do1が所望間隔D_targetとなるように、間隔調整系14及びステージ駆動系23の少なくとも一方を制御してもよい。 In the fifteenth modification as well, as in the fourteenth modification, in the scanning electron microscope SEM, the distance D between the injection surface 121LS and the surface WSu is a desired distance D_taget, but the injection surface 121LS and the stage. At least one of the interval adjusting system 14 and the stage drive system 23 may be controlled so that the interval Do1 between the surface of 22 (for example, the outer peripheral surface OS) becomes the desired interval D_target.

(3−16)第16変形例
第16変形例では、第16変形例においてステージ22が試料Wを保持する様子を示す断面図である図40に示すように、試料Wは、カバー部材25によって覆われていてもよい。つまり、試料Wとビーム照射装置1(特に、射出面121LS)との間にカバー部材25が配置されている状態で、電子ビームEBが試料Wに照射されてもよい。この際、カバー部材25に貫通孔が形成されていてもよく、電子ビームEBは、カバー部材25の貫通孔を介して試料Wに照射されてもよい。カバー部材25は、試料Wの表面WSuに接するように又は表面WSuとの間に間隙を確保するように試料Wの上方に配置されていてもよい。この場合、差動排気系12は、試料Wの表面WSuの少なくとも一部を覆う真空領域VSPに代えて、カバー部材25の表面25sの少なくとも一部を覆う真空領域VSPを形成してもよい。差動排気系12は、試料Wの表面WSuに接する真空領域VSPに代えて、カバー部材25の表面25sに接する真空領域VSPを形成してもよい。尚、図40は、説明の便宜上、走査型電子顕微鏡SEMが、第16変形例で説明したカバー部材25で覆われた試料Wに電子ビームEBを照射する例を示しているが、第1変形例の走査型電子顕微鏡SEMaから第13変形例の走査型電子顕微鏡SEMmのそれぞれもまた、第16変形例で説明したカバー部材25で覆われた試料Wに電子ビームEBを照射してもよいことはいうまでもない。
(3-16) 16th Modified Example In the 16th modified example, the sample W is formed by the cover member 25 as shown in FIG. 40, which is a cross-sectional view showing how the stage 22 holds the sample W in the 16th modified example. It may be covered. That is, the electron beam EB may irradiate the sample W with the cover member 25 arranged between the sample W and the beam irradiating device 1 (particularly, the injection surface 121LS). At this time, a through hole may be formed in the cover member 25, and the electron beam EB may irradiate the sample W through the through hole of the cover member 25. The cover member 25 may be arranged above the sample W so as to be in contact with the surface WSu of the sample W or to secure a gap between the cover member 25 and the surface WSu. In this case, the differential exhaust system 12 may form a vacuum region VSP that covers at least a part of the surface 25s of the cover member 25 instead of the vacuum region VSP that covers at least a part of the surface WSu of the sample W. The differential exhaust system 12 may form a vacuum region VSP in contact with the surface 25s of the cover member 25 instead of the vacuum region VSP in contact with the surface WSu of the sample W. Note that FIG. 40 shows an example in which the scanning electron microscope SEM irradiates the sample W covered with the cover member 25 described in the 16th modification by irradiating the sample W with the electron beam EB for convenience of explanation. Each of the scanning electron microscope SEMa of the example to the scanning electron microscope SEMm of the thirteenth modification may also irradiate the sample W covered with the cover member 25 described in the sixteenth modification with the electron beam EB. Needless to say.

カバー部材25の表面25sは、待避部材223の上面ESと同じ高さに位置していてもよい。この場合、待避部材223は、ステージ22の移動に伴ってビーム照射装置1がカバー部材25と待避部材223との間で移動する場合に真空領域VSPを維持するために利用可能であってもよい。第2変形例において、カバー部材25と待避部材223との間の空間の少なくとも一部が排気されてもよい。第3変形例において、カバー部材25と待避部材223との間の間隔が、カバー部材25と外周部材222のうちの待避部材223以外の部分との間の間隔とは異なるように、カバー部材25がステージ22に載置されてもよい。第7変形例において、外周部材222gは、試料Wの表面WSuと外周部材222gの上面OSとの相対位置に基づいて移動する場合と同様に、カバー部材25の表面25sと外周部材222gの上面OSとの相対位置に基づいて移動してもよい。第9変形例において、真空領域VSPの移動元の面及び/又は移動先の面は、試料Wの表面WSuに加えて又は代えて、カバー部材25の表面25sの少なくとも一部を含んでいてもよい。 The surface 25s of the cover member 25 may be located at the same height as the upper surface ES of the shunting member 223. In this case, the shunt member 223 may be available to maintain the vacuum region VSP when the beam irradiator 1 moves between the cover member 25 and the shunt member 223 as the stage 22 moves. .. In the second modification, at least a part of the space between the cover member 25 and the shunting member 223 may be exhausted. In the third modification, the cover member 25 is set so that the distance between the cover member 25 and the shunting member 223 is different from the distance between the cover member 25 and the portion of the outer peripheral member 222 other than the shunting member 223. May be placed on the stage 22. In the seventh modification, the outer peripheral member 222g moves based on the relative position between the surface WSu of the sample W and the upper surface OS of the outer peripheral member 222g, and the upper surface OS of the surface 25s of the cover member 25 and the outer peripheral member 222g. It may move based on the relative position with. In the ninth modification, the moving source surface and / or the moving destination surface of the vacuum region VSP may include at least a part of the surface 25s of the cover member 25 in addition to or in place of the surface WSu of the sample W. Good.

第16変形例では、試料Wは、真空領域VSPが試料Wの表面WSuの全体を覆うことができる程度に小さいサイズを有していてもよいし、真空領域VSPが試料Wの表面WSuのうちの一部しか覆うことができない程度に大きいサイズを有していてもよい。 In the 16th modification, the sample W may have a size small enough so that the vacuum region VSP can cover the entire surface WSu of the sample W, or the vacuum region VSP is of the surface WSu of the sample W. It may have a size large enough to cover only a part of.

第16変形例では、走査型電子顕微鏡SEMは、射出面121LSと表面WSuとの間の間隔Dが所望間隔D_targetとなることに代えて、射出面121LSとカバー部材25の表面25sとの間の間隔Do2が所望間隔D_targetとなるように、間隔調整系14及びステージ駆動系23の少なくとも一方を制御してもよい。 In the 16th modification, in the scanning electron microscope SEM, the distance D between the injection surface 121LS and the surface WSu is a desired distance D_stage, but instead of the distance D between the injection surface 121LS and the surface 25s of the cover member 25. At least one of the interval adjusting system 14 and the stage drive system 23 may be controlled so that the interval Do2 becomes the desired interval D_taget.

(3−17)その他の変形例
上述した説明では、外周部材222は、XY平面に沿った一の方向において保持部材221に隣接する待避部材223を含んでいる。しかしながら、外周部材222は、XY平面に沿った複数の異なる方向において保持部材221に夫々隣接する複数の待避部材223を含んでいてもよい。例えば、図41(a)に示すように、外周部材222は、保持部材221よりも−Y側において保持部材221に隣接する待避部材223−1と、保持部材221よりも+Y側において保持部材221に隣接する待避部材223−2とを含んでいてもよい。例えば、図41(b)に示すように、外周部材222は、保持部材221よりも−Y側において保持部材221に隣接する待避部材223−1と、保持部材221よりも+Y側において保持部材221に隣接する待避部材223−2と、保持部材221よりも−X側において保持部材221に隣接する待避部材223−3と、保持部材221よりも+X側において保持部材221に隣接する待避部材223−4とを含んでいてもよい。この場合には、各待避部材223−1から223−1は、上述した待避部材223と同様に利用可能である。
(3-17) Other Modifications In the above description, the outer peripheral member 222 includes a retaining member 223 adjacent to the holding member 221 in one direction along the XY plane. However, the outer peripheral member 222 may include a plurality of shunting members 223 that are adjacent to the holding member 221 in a plurality of different directions along the XY plane. For example, as shown in FIG. 41 (a), the outer peripheral member 222 has a shunting member 223-1 adjacent to the holding member 221 on the −Y side of the holding member 221 and a holding member 221 on the + Y side of the holding member 221. May include a shunting member 223-2 adjacent to the. For example, as shown in FIG. 41 (b), the outer peripheral member 222 has a shunting member 223-1 adjacent to the holding member 221 on the −Y side of the holding member 221 and a holding member 221 on the + Y side of the holding member 221. The shunting member 223-2 adjacent to the holding member 223-2, the shunting member 223-3 adjacent to the holding member 221 on the -X side of the holding member 221 and the shunting member 223 adjacent to the holding member 221 on the + X side of the holding member 221. 4 and may be included. In this case, each of the shunting members 223-1 to 223-1 can be used in the same manner as the shunting member 223 described above.

上述した説明では、差動排気系12は、単一の排気機構(具体的には、排気溝124及び配管125)を備える1段式の差動排気系を備えている。しかしながら、複数の排気機構を備える多段式の差動排気系であってもよい。この場合、真空形成部材121の射出面121LSには、複数の排気溝124が形成され、真空形成部材121には、複数の排気溝124に夫々連通する複数の配管125が形成される。複数の配管125は、夫々、ポンプ系5が備える複数の真空ポンプ52に接続される。複数の真空ポンプ52の排気能力は、同一であってもよいし、異なっていてもよい。 In the above description, the differential exhaust system 12 includes a one-stage differential exhaust system including a single exhaust mechanism (specifically, an exhaust groove 124 and a pipe 125). However, it may be a multi-stage differential exhaust system including a plurality of exhaust mechanisms. In this case, a plurality of exhaust grooves 124 are formed on the injection surface 121LS of the vacuum forming member 121, and a plurality of pipes 125 communicating with the plurality of exhaust grooves 124 are formed on the vacuum forming member 121. Each of the plurality of pipes 125 is connected to a plurality of vacuum pumps 52 included in the pump system 5. The exhaust capacities of the plurality of vacuum pumps 52 may be the same or different.

走査型電子顕微鏡SEMに限らず、電子ビームEBを試料W(或いは、その他の任意の物体)に照射する任意の電子ビーム装置が、上述した走査型電子顕微鏡SEMと同様の構造を有していてもよい。つまり、任意の電子ビーム装置が、上述したステージ22を備えていてもよい。任意の電子ビーム装置の一例として、電子ビームEBを用いて電子線レジストが塗布されたウェハを露光することでウェハにパターンを形成する電子ビーム露光装置、及び、電子ビームEBを母材に照射して発生する熱で母材を溶接する電子ビーム溶接装置の少なくとも一方があげられる。 Not limited to the scanning electron microscope SEM, any electron beam device that irradiates the sample W (or any other object) with the electron beam EB has the same structure as the scanning electron microscope SEM described above. May be good. That is, any electron beam device may include the stage 22 described above. As an example of an arbitrary electron beam device, the electron beam exposure device that forms a pattern on the wafer by exposing the wafer coated with the electron beam resist using the electron beam EB, and the electron beam EB are irradiated to the base material. At least one of the electron beam welding devices that welds the base metal with the heat generated by the metal beam.

或いは、電子ビーム装置に限らず、電子ビームEBとは異なる任意の荷電粒子ビーム又はエネルギビーム(例えば、イオンビーム)を任意の試料W(或いは、その他の任意の物体)に照射する任意のビーム装置が上述した走査型電子顕微鏡SEMと同様の構造を有していてもよい。つまり、荷電粒子ビーム又はエネルギビームを照射可能なビーム光学系を備える任意のビーム装置が、上述したステージ22を備えていてもよい。任意のビーム装置の一例として、集束したイオンビームを試料に照射し加工や観察を行う集束イオンビーム(FIB:Focused Ion Beam)装置、及び、軟X線領域(例えば5〜15nmの波長域)のEUV(Extreme Ultraviolet)光を用いてレジストが塗布されたウェハを露光することでウェハにパターンを形成するEUV露光装置の少なくとも一方があげられる。或いは、ビーム装置に限らず、電子を含む任意の荷電粒子を、ビームとは異なる照射形態で任意の試料W(或いは、その他の任意の物体)に照射する任意の照射装置が上述した走査型電子顕微鏡SEMと同様の構造を有していてもよい。つまり、荷電粒子を照射(例えば、放出、生成、噴出又は)可能な照射系を備える任意の照射装置が、上述したステージ22を備えていてもよい。任意の照射装置の一例として、プラズマを用いて物体をエッチングするエッチング装置、及び、プラズマを用いて物体に成膜処理を行う成膜装置(例えば、スパッタリング装置等のPVD(Physical Vapor Deposition)装置、及び、CVD(Chemical Vapor Deposition)装置の少なくとも一方)の少なくとも一方があげられる。 Alternatively, not limited to the electron beam device, any beam device that irradiates an arbitrary sample W (or any other object) with an arbitrary charged particle beam or energy beam (for example, an ion beam) different from the electron beam EB. May have the same structure as the scanning electron microscope SEM described above. That is, any beam device including a beam optical system capable of irradiating a charged particle beam or an energy beam may include the stage 22 described above. As an example of an arbitrary beam device, a focused ion beam (FIB: Focused Ion Beam) device that irradiates a sample with a focused ion beam for processing and observation, and a soft X-ray region (for example, a wavelength range of 5 to 15 nm). At least one of the EUV exposure devices that form a pattern on a wafer by exposing a wafer coated with a resist using EUV (Extreme Ultraviolet) light can be mentioned. Alternatively, the scanning electron described above is not limited to the beam device, and any irradiation device that irradiates an arbitrary sample W (or any other object) with an arbitrary charged particle containing an electron in an irradiation form different from the beam. It may have a structure similar to that of a microscope SEM. That is, any irradiation device including an irradiation system capable of irradiating (for example, emitting, generating, ejecting, or) charged particles may include the stage 22 described above. As an example of an arbitrary irradiation device, an etching device that etches an object using plasma, and a film forming device (for example, a PVD (Physical Vapor Deposition) device such as a sputtering device) that performs a film forming process on an object using plasma. And at least one of CVD (Chemical Vapor Deposition) apparatus).

或いは、荷電粒子に限らず、任意の物質を照射と異なる形態で任意の試料W(或いは、その他の任意の物体)に真空下で作用させる任意の真空装置が上述した第1実施形態の走査型電子顕微鏡SEMaから第13実施形態の走査型電子顕微鏡SEMmのうちの少なくとも一つと同様の構造を有していてもよい。任意の真空装置の一例として、真空中で蒸発又は昇華させた材料の蒸気を試料に到達させて蓄積させる事で膜を形成する真空蒸着装置があげられる。 Alternatively, the scanning type of the first embodiment described above is an arbitrary vacuum device that causes an arbitrary sample W (or any other arbitrary object) to act under a vacuum in a form different from irradiation, not limited to charged particles. It may have the same structure as at least one of the scanning electron microscope SEMm of the thirteenth embodiment from the electron microscope SEMa. An example of an arbitrary vacuum apparatus is a vacuum vapor deposition apparatus that forms a film by allowing vapor of a material evaporated or sublimated in a vacuum to reach a sample and accumulate it.

(4)付記
以上説明した実施形態に関して、更に以下の付記を開示する。
[付記1]
物体の表面の一部を覆い前記物体と接する真空領域を局所的に形成可能な真空形成部材と、前記物体を保持可能な保持面を有する保持装置と、前記保持面の周囲の少なくとも一部に位置する外部面と、前記保持面に保持された前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置とを備える局所真空装置。
[付記2]
前記位置変更装置は、前記外部面を前記所定方向に沿って動かして前記相対位置を変更する付記1に記載の局所真空装置。
[付記3]
前記位置変更装置は、前記物体の表面のうち前記真空領域と接する面部分と前記外部面との前記所定方向における相対位置に応じて、前記物体の表面と前記外部面との相対位置を変更する付記1又は2に記載の局所真空装置。
[付記4]
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記物体の周縁部の前記所定方向における位置と、前記外部面の物体側の周縁部の所定方向における位置とを揃える付記1から3のいずれか一項に記載の局所真空装置。
[付記5]
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記所定方向において、前記外部面を前記物体の表面のうち前記真空領域と接する面部分と同じ平面内に位置させる付記1から4のいずれか一項に記載の局所真空装置。
[付記6]
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記所定方向において、前記外部面を前記物体の表面のうち前記真空領域と接する面部分よりも前記保持面に近くする付記1から5のいずれか一項に記載の局所真空装置。
[付記7]
前記位置変更装置は、第1の位置変更装置であって、前記物体の表面に沿った方向における前記真空形成部材と前記物体との相対位置を変更可能な第2の位置変更装置を更に備える付記1から6のいずれか一項に記載の局所真空装置。
[付記8]
物体上の空間に前記物体の表面の一部を覆う真空領域を局所的に形成可能な真空形成部材と、前記物体を保持可能な保持面を有する保持装置と、前記保持面の周囲の少なくとも一部に位置する外部面とを備え、前記外部面は、前記物体の厚みの規格値の範囲に応じて定まる所定量だけ、前記保持面から前記物体の表面へ向かう方向に、前記保持面から突き出ている局所真空装置。
[付記9]
前記所定量は、前記物体の厚みの規格上の最小値以下である付記8に記載の局所真空装置。
[付記10]
前記真空領域は、前記物体の表面の一部と接する付記1から9のいずれか一項に記載の局所真空装置。
[付記11]
前記真空領域が形成されているときに、前記物体の表面の少なくとも別の一部は非真空領域又は前記真空領域よりも真空度が低い領域で覆われる付記1から10のいずれか一項に記載の局所真空装置。
[付記12]
前記真空形成部材は、前記物体の表面と対向するように設けられ、排気装置と連通している開口を備える面を有する、付記1から11のいずれか一項に記載の局所真空装置。
[付記13]
前記開口は第1の開口であって、前記面における前記第1の開口の周囲に第2の開口を有する付記12に記載の局所真空装置。
[付記14]
前記第1の開口内の空間の真空度は、前記第2の開口内の空間における真空度よりも高い付記13に記載の局所真空装置。
[付記15]
前記真空形成部材は、前記物体の表面と間隙をもって配置され、前記真空形成部材の前記表面と対向している部分の前記物体側の空間を排気することによって真空を形成する、差動排気方式の真空形成部材である付記1から14のいずれか一項に記載の局所真空装置。
[付記16]
前記真空領域の気圧は1×10−3パスカル以下である付記1から15のいずれか一項に記載の局所真空装置。
[付記17]
前記真空形成部材と前記物体の間の距離は1μm以上且つ10μm以下である付記1から16のいずれか一項に記載の局所真空装置。
[付記18]
付記1から17のいずれか一項に記載の局所真空装置と、前記真空領域の少なくとも一部を介して前記物体に荷電粒子を照射する荷電粒子照射装置とを備える荷電粒子装置。
[付記19]
前記真空形成部材は、前記照射装置と前記荷電粒子が照射される前記物体上の照射領域との間の空間に、前記空間と異なる領域における真空度よりも高い真空度の真空領域を形成する付記18に記載の荷電粒子装置。
[付記20]
保持面が保持する物体の表面の一部を覆い且つ前記物体と接する真空領域を局所的に形成することと、前記保持面に保持された前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記保持面の周囲の少なくとも一部に位置する外部面の相対位置を変更することとを含む真空領域の形成方法。
(4) Additional notes The following additional notes will be further disclosed with respect to the embodiments described above.
[Appendix 1]
A vacuum forming member capable of locally forming a vacuum region in contact with the object by covering a part of the surface of the object, a holding device having a holding surface capable of holding the object, and at least a part around the holding surface. A local vacuum apparatus including a positioned external surface and a position changing device for changing the relative position between the surface of the object and the external surface along a predetermined direction intersecting the surface of the object held by the holding surface. ..
[Appendix 2]
The local vacuum device according to Appendix 1, wherein the position changing device changes the relative position by moving the outer surface along the predetermined direction.
[Appendix 3]
The position changing device changes the relative position between the surface of the object and the external surface according to the relative position of the surface portion of the surface of the object in contact with the vacuum region and the external surface in the predetermined direction. The local vacuum apparatus according to Appendix 1 or 2.
[Appendix 4]
The position changing device changes the relative position between the surface of the object and the external surface along the predetermined direction, and changes the position of the peripheral edge portion of the object in the predetermined direction and the peripheral edge of the external surface on the object side. The local vacuum apparatus according to any one of Supplementary note 1 to 3, which aligns the positions of the portions in a predetermined direction.
[Appendix 5]
The position changing device changes the relative position between the surface of the object and the outer surface along the predetermined direction, and in the predetermined direction, the surface of the surface of the object in contact with the vacuum region. The local vacuum apparatus according to any one of Supplementary note 1 to 4, which is positioned in the same plane as the portion.
[Appendix 6]
The position changing device changes the relative position between the surface of the object and the outer surface along the predetermined direction, and in the predetermined direction, the surface of the surface of the object in contact with the vacuum region. The local vacuum apparatus according to any one of Appendix 1 to 5, which is closer to the holding surface than the portion.
[Appendix 7]
The additional note that the position changing device is a first position changing device, further comprising a second position changing device capable of changing the relative position between the vacuum forming member and the object in a direction along the surface of the object. The local vacuum apparatus according to any one of 1 to 6.
[Appendix 8]
A vacuum forming member capable of locally forming a vacuum region covering a part of the surface of the object in a space on the object, a holding device having a holding surface capable of holding the object, and at least one around the holding surface. The outer surface is provided with an outer surface located on the portion, and the outer surface protrudes from the holding surface in a direction from the holding surface toward the surface of the object by a predetermined amount determined according to a range of standard values of the thickness of the object. Local vacuum equipment.
[Appendix 9]
The local vacuum apparatus according to Appendix 8, wherein the predetermined amount is equal to or less than a standard minimum value of the thickness of the object.
[Appendix 10]
The local vacuum apparatus according to any one of Appendix 1 to 9, wherein the vacuum region is in contact with a part of the surface of the object.
[Appendix 11]
The item according to any one of Appendix 1 to 10, wherein at least another part of the surface of the object is covered with a non-vacuum region or a region having a lower degree of vacuum than the vacuum region when the vacuum region is formed. Local vacuum device.
[Appendix 12]
The local vacuum device according to any one of Appendix 1 to 11, wherein the vacuum forming member is provided so as to face the surface of the object and has a surface having an opening communicating with the exhaust device.
[Appendix 13]
The local vacuum apparatus according to Appendix 12, wherein the opening is a first opening and has a second opening around the first opening on the surface.
[Appendix 14]
The local vacuum apparatus according to Appendix 13, wherein the degree of vacuum in the space in the first opening is higher than the degree of vacuum in the space in the second opening.
[Appendix 15]
The vacuum forming member is arranged with a gap from the surface of the object, and forms a vacuum by exhausting the space on the object side of the portion of the vacuum forming member facing the surface. The local vacuum apparatus according to any one of Appendix 1 to 14, which is a vacuum forming member.
[Appendix 16]
The local vacuum apparatus according to any one of Supplementary note 1 to 15, wherein the air pressure in the vacuum region is 1 × 10 -3 pascal or less.
[Appendix 17]
The local vacuum apparatus according to any one of Appendix 1 to 16, wherein the distance between the vacuum forming member and the object is 1 μm or more and 10 μm or less.
[Appendix 18]
A charged particle device comprising the local vacuum device according to any one of Supplementary note 1 to 17 and a charged particle irradiating device for irradiating the object with charged particles through at least a part of the vacuum region.
[Appendix 19]
The addition: the vacuum forming member forms a vacuum region having a vacuum degree higher than the vacuum degree in a region different from the space in the space between the irradiation device and the irradiation region on the object to which the charged particles are irradiated. 18. The charged particle apparatus according to 18.
[Appendix 20]
The vacuum region that covers a part of the surface of the object held by the holding surface and is in contact with the object is locally formed, and the above-mentioned is along a predetermined direction intersecting the surface of the object held by the holding surface. A method of forming a vacuum region, which comprises changing the relative positions of an external surface located at least a part of the surface of an object and the periphery of the holding surface.

上述の各実施形態(各変形例を含む、以下この段落において同じ)の構成要件の少なくとも一部は、上述の各実施形態の構成要件の少なくとも他の一部と適宜組み合わせることができる。上述の各実施形態の構成要件のうちの一部が用いられなくてもよい。また、法令で許容される限りにおいて、上述の各実施形態で引用した全ての公開公報及び米国特許の開示を援用して本文の記載の一部とする。 At least some of the constituents of each of the above embodiments (including modifications, hereinafter the same in this paragraph) can be appropriately combined with at least other parts of the constituents of each of the above embodiments. Some of the constituent requirements of each of the above embodiments may not be used. In addition, to the extent permitted by law, all publications cited in each of the above embodiments and disclosures of US patents shall be incorporated as part of the text.

本発明は、上述した実施形態に限られるものではなく、特許請求の範囲及び明細書全体から読み取れる発明の要旨或いは思想に反しない範囲で適宜変更可能であり、そのような変更を伴う局所真空装置、荷電粒子装置、真空領域の形成方法及び荷電粒子の照射方法もまた本発明の技術的範囲に含まれるものである。 The present invention is not limited to the above-described embodiment, and can be appropriately modified within the scope of claims and within a range not contrary to the gist or idea of the invention that can be read from the entire specification, and a local vacuum apparatus accompanied by such a modification. , A charged particle device, a method of forming a vacuum region, and a method of irradiating charged particles are also included in the technical scope of the present invention.

SEM 走査型電子顕微鏡
1 ビーム照射装置
11 ビーム光学系
12 差動排気系
121LS 射出面
13 フランジ部材
14 間隔調整系
2 ステージ装置
22 ステージ
221 保持部材
222 外周部材
223 待避部材
23 ステージ駆動系
4 制御装置
5 ポンプ系
51、52 真空ポンプ
SPb1、SPb2、SPb3 ビーム通過空間
SPw 収容空間
VSP 真空領域
W 試料
WSu 表面
HS 保持面
OS、ES 上面
SEM scanning electron microscope 1 Beam irradiation device 11 Beam optical system 12 Differential exhaust system 121LS Injection surface 13 Flange member 14 Spacing adjustment system 2 Stage device 22 Stage 221 Holding member 222 Outer peripheral member 223 Reservoir member 23 Stage drive system 4 Control device 5 Pump system 51, 52 Vacuum pump SPb1, SPb2, SPb3 Beam passage space SPw Containment space VSP Vacuum area W Sample WSu surface HS holding surface OS, ES top surface

Claims (46)

排気装置と接続可能な管路を有し、物体の面に接する空間の気体を前記管路を介して排出して、真空領域を形成する真空形成部材と、
前記物体の周囲の少なくとも一部に位置する外部面と、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置と
を備え、
前記真空領域の周囲の前記真空領域よりも気圧が高い空間の少なくとも一部の気体は、前記真空形成部材の前記管路を介して排出される局所真空装置。
A vacuum forming member having a pipeline that can be connected to an exhaust device and discharging gas in a space in contact with the surface of an object through the pipeline to form a vacuum region.
An external surface located at least a part of the periphery of the object,
A position changing device for changing the relative position between the surface of the object and the outer surface along a predetermined direction intersecting the surface of the object is provided.
A local vacuum apparatus in which at least a part of a gas in a space surrounding the vacuum region and having a higher atmospheric pressure than the vacuum region is discharged through the pipeline of the vacuum forming member.
排気装置と接続される第1端と物体の面に接する第1空間と接続される第2端とを有する管路を備え、前記第1空間の気体を前記管路を介して排出して、前記第1空間と接続される第2空間よりも圧力が低い真空領域を前記第1空間に形成する真空形成部材と、
前記物体の周囲の少なくとも一部に位置する外部面と、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置と
を備える局所真空装置。
A conduit having a first end connected to an exhaust device and a second end connected to a first space in contact with the surface of an object is provided, and gas in the first space is discharged through the conduit. A vacuum forming member that forms a vacuum region having a lower pressure than the second space connected to the first space in the first space.
An external surface located at least a part of the periphery of the object,
A local vacuum apparatus including a position changing device for changing a relative position between the surface of the object and the external surface along a predetermined direction intersecting the surface of the object.
排気装置と接続可能な管路を有し、物体の面の一部と対向した状態で前記管路を介して気体を排出することにより、前記物体の前記面の第1部分に接する第1空間に、前記面の前記第1部分とは異なる第2部分に接する第2空間の圧力より圧力が低い真空領域を形成可能な真空形成部材と、
前記物体の周囲の少なくとも一部に位置する外部面と、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置と
を備える局所真空装置。
A first space that has a pipeline that can be connected to an exhaust device and is in contact with a first portion of the surface of the object by discharging gas through the pipeline while facing a part of the surface of the object. In addition, a vacuum forming member capable of forming a vacuum region having a pressure lower than the pressure of the second space in contact with a second portion different from the first portion of the surface.
An external surface located at least a part of the periphery of the object,
A local vacuum apparatus including a position changing device for changing a relative position between the surface of the object and the external surface along a predetermined direction intersecting the surface of the object.
前記第2空間は、前記第1空間を経ずに前記管路と接続できないが前記第1空間を経ると接続できる
請求項2または3に記載の局所真空装置。
The local vacuum apparatus according to claim 2 or 3, wherein the second space cannot be connected to the pipeline without passing through the first space, but can be connected through the first space.
排気装置と接続可能な管路を有し、物体の面と前記管路の端部とが対向した状態で、前記物体の前記面に接する空間の気体を前記管路を介して排出して、真空領域を形成する真空形成部材と、
前記物体の周囲の少なくとも一部に位置する外部面と、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置と
を備える局所真空装置。
It has a pipeline that can be connected to an exhaust device, and with the surface of the object and the end of the pipeline facing each other, the gas in the space in contact with the surface of the object is discharged through the pipeline. The vacuum forming member that forms the vacuum region and
An external surface located at least a part of the periphery of the object,
A local vacuum apparatus including a position changing device for changing a relative position between the surface of the object and the external surface along a predetermined direction intersecting the surface of the object.
前記物体の前記面の少なくとも一部は、前記真空領域の少なくとも一部に面する
請求項1から5のいずれか一項に記載の局所真空装置。
The local vacuum apparatus according to any one of claims 1 to 5, wherein at least a part of the surface of the object faces at least a part of the vacuum region.
前記物体の前記面の少なくとも一部は、前記真空領域の少なくとも一部に覆われる
請求項1から6のいずれか一項に記載の局所真空装置。
The local vacuum apparatus according to any one of claims 1 to 6, wherein at least a part of the surface of the object is covered with at least a part of the vacuum region.
前記物体の前記面の一部は、前記真空領域に面し、前記物体の前記面の他の一部は、大気圧領域に面する
請求項1から7のいずれか一項に記載の局所真空装置。
The local vacuum according to any one of claims 1 to 7, wherein a part of the surface of the object faces the vacuum region and the other part of the surface of the object faces the atmospheric pressure region. apparatus.
前記位置変更装置は、前記外部面を前記所定方向に沿って動かして前記相対位置を変更する
請求項1から8のいずれか一項に記載の局所真空装置。
The local vacuum device according to any one of claims 1 to 8, wherein the position changing device changes the relative position by moving the outer surface along the predetermined direction.
前記位置変更装置は、前記物体の表面のうち前記真空領域と接する面部分と前記外部面との前記所定方向における相対位置に応じて、前記物体の表面と前記外部面との相対位置を変更する
請求項1から9のいずれか一項に記載の局所真空装置。
The position changing device changes the relative position between the surface of the object and the external surface according to the relative position of the surface portion of the surface of the object in contact with the vacuum region and the external surface in the predetermined direction. The local vacuum apparatus according to any one of claims 1 to 9.
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記物体の周縁部の前記所定方向における位置と、前記外部面の物体側の周縁部の所定方向における位置とを揃える
請求項1から10のいずれか一項に記載の局所真空装置。
The position changing device changes the relative position between the surface of the object and the external surface along the predetermined direction, and changes the position of the peripheral edge portion of the object in the predetermined direction and the peripheral edge of the external surface on the object side. The local vacuum apparatus according to any one of claims 1 to 10, wherein the positions of the portions are aligned with each other in a predetermined direction.
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記所定方向において、前記物体の表面のうち前記真空領域と接する面部分と前記外部面との距離が所定の距離以下となる位置に位置させる
請求項1から11のいずれか一項に記載の局所真空装置。
The position changing device changes the relative position between the surface of the object and the outer surface along the predetermined direction, and in the predetermined direction, the surface portion of the surface of the object in contact with the vacuum region and the outside. The local vacuum apparatus according to any one of claims 1 to 11, wherein the local vacuum apparatus is located at a position where the distance from the surface is equal to or less than a predetermined distance.
前記所定の距離は、前記物体と前記真空形成部材との間に前記真空領域が形成されるときの前記物体と前記真空形成部材との間の距離より小さい
請求項12に記載の局所真空装置。
The local vacuum apparatus according to claim 12, wherein the predetermined distance is smaller than the distance between the object and the vacuum forming member when the vacuum region is formed between the object and the vacuum forming member.
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記所定方向において、前記外部面を前記物体の表面のうち前記真空領域と接する面部分と同じ平面内に位置させる
請求項1から13のいずれか一項に記載の局所真空装置。
The position changing device changes the relative position between the surface of the object and the outer surface along the predetermined direction, and in the predetermined direction, the surface of the surface of the object in contact with the vacuum region. The local vacuum apparatus according to any one of claims 1 to 13, which is located in the same plane as the portion.
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記所定方向において、前記外部面を前記物体の表面のうち前記真空領域と接する面部分と同じ高さに位置させる又はより下方に位置させる
請求項1から14のいずれか一項に記載の局所真空装置。
The position changing device changes the relative position between the surface of the object and the outer surface along the predetermined direction, and in the predetermined direction, the surface of the surface of the object in contact with the vacuum region. The local vacuum apparatus according to any one of claims 1 to 14, which is located at the same height as or below the portion.
前記位置変更装置は、第1の位置変更装置であって、
前記物体の表面に沿った方向における前記真空形成部材と前記物体との相対位置を変更可能な第2の位置変更装置を更に備える
請求項1から15のいずれか一項に記載の局所真空装置。
The position changing device is a first position changing device.
The local vacuum apparatus according to any one of claims 1 to 15, further comprising a second position changing device capable of changing the relative position between the vacuum forming member and the object in a direction along the surface of the object.
前記物体を保持可能な保持面を有する保持装置を備え、
前記外部面は、前記保持面の周囲の少なくとも一部に位置する
請求項1から16のいずれか一項に記載の局所真空装置。
A holding device having a holding surface capable of holding the object is provided.
The local vacuum apparatus according to any one of claims 1 to 16, wherein the outer surface is located at least a part around the holding surface.
前記位置変更装置は、前記所定方向に沿って前記物体の表面と前記外部面との相対位置を変更して、前記所定方向において、前記外部面を前記物体の表面のうち前記真空領域と接する面部分よりも前記保持面に近くする
請求項17に記載の局所真空装置。
The position changing device changes the relative position between the surface of the object and the outer surface along the predetermined direction, and in the predetermined direction, the surface of the surface of the object in contact with the vacuum region. The local vacuum apparatus according to claim 17, wherein the holding surface is closer to the holding surface than the portion.
排気装置と接続可能な管路を有し、物体の面に接する空間の気体を前記管路を介して排出して、真空領域を形成する真空形成部材と、
前記物体を保持可能な保持面を有する保持装置と、
前記保持面の周囲の少なくとも一部に位置する外部面と
を備え、
前記真空領域の周囲の前記真空領域よりも気圧が高い空間の少なくとも一部の気体は、前記真空形成部材の前記管路を介して排出され、
前記外部面は、前記物体の厚みの規格値の範囲に応じて定まる所定量だけ、前記保持面から前記物体の表面へ向かう方向に、前記保持面から突き出ている
局所真空装置。
A vacuum forming member having a pipeline that can be connected to an exhaust device and discharging gas in a space in contact with the surface of an object through the pipeline to form a vacuum region.
A holding device having a holding surface capable of holding the object,
It is provided with an outer surface located at least a part around the holding surface.
At least a part of the gas in the space around the vacuum region having a higher atmospheric pressure than the vacuum region is discharged through the pipeline of the vacuum forming member.
A local vacuum device in which the outer surface protrudes from the holding surface in a direction from the holding surface toward the surface of the object by a predetermined amount determined according to a range of standard values of the thickness of the object.
前記所定量は、前記物体の厚みの規格上の最小値以下である
請求項11から19のいずれか一項に記載の局所真空装置。
The local vacuum apparatus according to any one of claims 11 to 19, wherein the predetermined amount is equal to or less than a standard minimum value of the thickness of the object.
前記真空領域は、前記物体の表面の一部と接する
請求項1から20のいずれか一項に記載の局所真空装置。
The local vacuum apparatus according to any one of claims 1 to 20, wherein the vacuum region is in contact with a part of the surface of the object.
前記真空領域が形成されているときに、前記物体の表面の一部は前記真空領域で覆われ、前記物体の表面の少なくとも別の一部は非真空領域又は前記真空領域よりも真空度が低い領域で覆われる
請求項1から21のいずれか一項に記載の局所真空装置。
When the vacuum region is formed, a part of the surface of the object is covered with the vacuum region, and at least another part of the surface of the object is a non-vacuum region or a lower degree of vacuum than the vacuum region. The local vacuum apparatus according to any one of claims 1 to 21, which is covered with an area.
前記真空形成部材は、前記物体の表面と対向するように設けられ、排気装置と連通している開口を備える面を有する、
請求項1から22のいずれか一項に記載の局所真空装置。
The vacuum forming member is provided so as to face the surface of the object and has a surface having an opening communicating with the exhaust device.
The local vacuum apparatus according to any one of claims 1 to 22.
前記開口は第1の開口であって、前記面における前記第1の開口の周囲に第2の開口を有する
請求項23に記載の局所真空装置。
23. The local vacuum apparatus according to claim 23, wherein the opening is a first opening and has a second opening around the first opening on the surface.
前記第1の開口内の空間の真空度は、前記第2の開口内の空間における真空度よりも高い
請求項24に記載の局所真空装置。
The local vacuum apparatus according to claim 24, wherein the degree of vacuum in the space in the first opening is higher than the degree of vacuum in the space in the second opening.
前記真空形成部材は、前記物体の表面と間隙をもって配置され、前記真空形成部材の前記表面と対向している部分の前記物体側の空間を排気することによって真空を形成する、差動排気方式の真空形成部材である
請求項1から25のいずれか一項に記載の局所真空装置。
The vacuum forming member is arranged with a gap from the surface of the object, and forms a vacuum by exhausting the space on the object side of the portion of the vacuum forming member facing the surface. The local vacuum apparatus according to any one of claims 1 to 25, which is a vacuum forming member.
前記真空領域の気圧は1×10−3パスカル以下である
請求項1から26のいずれか一項に記載の局所真空装置。
The local vacuum apparatus according to any one of claims 1 to 26, wherein the air pressure in the vacuum region is 1 × 10 -3 pascal or less.
前記真空形成部材と前記物体の間の距離は1μm以上且つ10μm以下である
請求項1から27のいずれか一項に記載の局所真空装置。
The local vacuum apparatus according to any one of claims 1 to 27, wherein the distance between the vacuum forming member and the object is 1 μm or more and 10 μm or less.
前記真空領域の真空度は、前記真空形成部材の外部の空間のうち前記真空領域が形成される空間とは異なる他の空間の真空度と比較して高く維持される
請求項1から27のいずれか一項に記載の局所真空装置。
Any of claims 1 to 27, wherein the degree of vacuum in the vacuum region is maintained higher than the degree of vacuum in a space outside the vacuum forming member, which is different from the space in which the vacuum region is formed. The local vacuum apparatus according to one item.
前記真空形成部材には開口が形成され、
前記開口を介して前記真空形成部材の外部の空間の少なくとも一部からの排気を行う
請求項1から29のいずれか一項に記載の局所真空装置。
An opening is formed in the vacuum forming member.
The local vacuum apparatus according to any one of claims 1 to 29, which exhausts air from at least a part of the space outside the vacuum forming member through the opening.
請求項1から30のいずれか一項に記載の局所真空装置と、
前記真空領域の少なくとも一部を介して荷電粒子を照射する荷電粒子照射装置と
を備える荷電粒子装置。
The local vacuum apparatus according to any one of claims 1 to 30,
A charged particle device including a charged particle irradiating device that irradiates charged particles through at least a part of the vacuum region.
前記荷電粒子照射装置から照射される荷電粒子の通路は前記真空領域の少なくとも一部を含む
請求項31に記載の荷電粒子装置。
The charged particle device according to claim 31, wherein the passage of the charged particles irradiated from the charged particle irradiating device includes at least a part of the vacuum region.
前記真空形成部材は、前記荷電粒子照射装置と前記荷電粒子が照射される照射領域との間の空間に、前記空間と異なる領域における真空度よりも高い真空度の真空領域を形成する
請求項32に記載の荷電粒子装置。
The vacuum forming member forms a vacuum region having a vacuum degree higher than the vacuum degree in a region different from the space in the space between the charged particle irradiation device and the irradiation region where the charged particles are irradiated. The charged particle apparatus according to.
前記荷電粒子照射装置は、前記荷電粒子を試料に向けて照射する
請求項31から33のいずれか一項に記載の荷電粒子装置。
The charged particle device according to any one of claims 31 to 33, wherein the charged particle irradiating device irradiates the charged particles toward a sample.
前記真空形成部材は、前記荷電粒子照射装置と前記荷電粒子が照射される前記試料上の照射領域との間の空間に、前記空間と異なる領域における真空度よりも高い真空度の真空領域を形成する
請求項34に記載の荷電粒子装置。
The vacuum forming member forms a vacuum region having a vacuum degree higher than the vacuum degree in a region different from the space in the space between the charged particle irradiator and the irradiation region on the sample to which the charged particles are irradiated. The charged particle apparatus according to claim 34.
前記物体の前記面は、前記試料の表面の少なくとも一部を含む
請求項34又は35に記載の荷電粒子装置。
The charged particle apparatus according to claim 34 or 35, wherein the surface of the object includes at least a part of the surface of the sample.
前記物体の前記面は、前記試料を保持する保持部材の表面の少なくとも一部を含む
請求項34又は35に記載の荷電粒子装置。
The charged particle apparatus according to claim 34 or 35, wherein the surface of the object includes at least a part of the surface of a holding member that holds the sample.
前記物体の前記面は、前記試料と前記真空形成部材との間に配置される部材の表面の少なくとも一部を含む
請求項34又は35に記載の荷電粒子装置。
The charged particle apparatus according to claim 34 or 35, wherein the surface of the object includes at least a part of the surface of the member arranged between the sample and the vacuum forming member.
物体の面に接する空間の気体を管路を介して排出して、真空領域を形成することと、
前記真空領域の周囲の前記真空領域よりも気圧が高い空間の少なくとも一部の気体を、前記管路を介して排出することと、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することと
を含む真空領域の形成方法。
To form a vacuum region by discharging the gas in the space in contact with the surface of the object through the pipeline,
Discharging at least a part of the gas in the space around the vacuum region having a higher atmospheric pressure than the vacuum region through the pipeline.
A method of forming a vacuum region, which comprises changing the relative position of the surface of the object and an external surface located at least a part of the periphery of the object along a predetermined direction intersecting the surface of the object.
排気装置と接続される第1端と、物体の面と接する第1空間と接続される第2端とを有する管路を有する真空形成部材を用いて、前記第1空間の気体を前記管路を介して排出して、前記第1空間と接続される第2空間よりも圧力が低い真空領域を前記第1空間に形成することと、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することと
を含む真空領域の形成方法。
Using a vacuum forming member having a conduit having a first end connected to the exhaust device and a second end connected to the first space in contact with the surface of the object, the gas in the first space is passed through the conduit. To form a vacuum region in the first space where the pressure is lower than that of the second space connected to the first space.
A method of forming a vacuum region, which comprises changing the relative position of the surface of the object and an external surface located at least a part of the periphery of the object along a predetermined direction intersecting the surface of the object.
排気装置と接続可能な管路を介して気体を排出することにより、物体の面の第1部分に接する第1空間に、前記面の前記第1部分とは異なる第2部分に接する第2空間の圧力より圧力が低い真空領域を形成することと、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することと
を含む真空領域の形成方法。
By discharging the gas through a pipeline that can be connected to the exhaust device, the first space in contact with the first part of the surface of the object is in contact with the second space different from the first part of the surface. To form a vacuum region where the pressure is lower than the pressure of
A method of forming a vacuum region, which comprises changing the relative position of the surface of the object and an external surface located at least a part of the periphery of the object along a predetermined direction intersecting the surface of the object.
前記第2空間は、前記第1空間を経ずに前記管路と接続できないが前記第1空間を経ると接続できる
請求項40又は41に記載の真空領域の形成方法。
The method for forming a vacuum region according to claim 40 or 41, wherein the second space cannot be connected to the pipeline without passing through the first space, but can be connected through the first space.
排気装置と接続可能な管路の端部と物体の面とが対向した状態で、前記物体の前記面に接する空間の気体を前記管路を介して排出して、真空領域を形成することと、
前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記物体の周囲の少なくとも一部に位置する外部面の相対位置を変更することと
を含む真空領域の形成方法。
With the end of the pipeline connectable to the exhaust device and the surface of the object facing each other, the gas in the space in contact with the surface of the object is discharged through the pipeline to form a vacuum region. ,
A method of forming a vacuum region, which comprises changing the relative position of the surface of the object and an external surface located at least a part of the periphery of the object along a predetermined direction intersecting the surface of the object.
物体の表面の一部を覆い前記物体と接する真空領域を局所的に形成可能な真空形成部材と、
前記物体を保持可能な保持面を有する保持装置と、
前記保持面の周囲の少なくとも一部に位置する外部面と、
前記保持面に保持された前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記外部面との相対位置を変更する位置変更装置と
を備える局所真空装置。
A vacuum forming member capable of locally forming a vacuum region that covers a part of the surface of an object and is in contact with the object.
A holding device having a holding surface capable of holding the object,
An external surface located at least a part around the holding surface and
A local vacuum apparatus including a position changing device for changing a relative position between the surface of the object and the outer surface along a predetermined direction intersecting the surface of the object held on the holding surface.
物体上の空間に前記物体の表面の一部を覆う真空領域を局所的に形成可能な真空形成部材と、
前記物体を保持可能な保持面を有する保持装置と、
前記保持面の周囲の少なくとも一部に位置する外部面と
を備え、
前記外部面は、前記物体の厚みの規格値の範囲に応じて定まる所定量だけ、前記保持面から前記物体の表面へ向かう方向に、前記保持面から突き出ている
局所真空装置。
A vacuum forming member capable of locally forming a vacuum region covering a part of the surface of the object in the space on the object,
A holding device having a holding surface capable of holding the object,
It is provided with an outer surface located at least a part around the holding surface.
A local vacuum device in which the outer surface protrudes from the holding surface in a direction from the holding surface toward the surface of the object by a predetermined amount determined according to a range of standard values of the thickness of the object.
保持面が保持する物体の表面の一部を覆い且つ前記物体と接する真空領域を局所的に形成することと、
前記保持面に保持された前記物体の表面に交差する所定方向に沿った、前記物体の表面と前記保持面の周囲の少なくとも一部に位置する外部面の相対位置を変更することと
を含む真空領域の形成方法。
To locally form a vacuum region that covers a part of the surface of the object held by the holding surface and is in contact with the object.
A vacuum including changing the relative position of the surface of the object and an outer surface located at least a portion of the periphery of the holding surface along a predetermined direction intersecting the surface of the object held by the holding surface. How to form the region.
JP2019052924A 2018-03-30 2019-03-20 Local vacuum device, charged particle device, and vacuum region forming method Pending JP2020155320A (en)

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PCT/JP2019/013225 WO2019189376A1 (en) 2018-03-30 2019-03-27 Localized vacuum apparatus, charged particle apparatus, and vacuum area forming method
TW108111092A TW202004824A (en) 2018-03-30 2019-03-28 Localized vacuum apparatus, charged particle apparatus, and vacuum area forming method

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