TW201936013A - Plasma processing apparatus - Google Patents

Abstract

A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

Description

Plasma processing device

The invention relates to a plasma processing device.

There have been known plasma processing apparatuses that use plasma to plasma process objects such as wafers. Such a plasma processing apparatus has, for example, a mounting table that holds a processing object that also serves as an electrode in a processing container that can constitute a vacuum space. The plasma processing device performs a plasma treatment on the object to be processed placed on the mounting table by applying a specific high-frequency power to the mounting table in a vacuum space formed in the processing container. An insertion hole penetrating the front surface and the back surface of the vacuum space side of the mounting table is formed in the mounting table, and a pin is inserted into the insertion hole. In the plasma processing apparatus, when the object to be processed is transported, the pins protrude from the insertion holes, and the pins support the object from the back surface to release the object from the mounting table.

A sealing member such as an O-ring is provided on a wall surface of the insertion hole facing the pin along a circumferential direction of the insertion hole. The sealing member seals the insertion hole by being in contact with the pin. In the plasma processing apparatus, the insertion hole is sealed by a sealing member, thereby maintaining the airtightness of the vacuum space in the processing container.
[Prior technical literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2013-42012

[Problems to be solved by the invention]

The present invention provides a technique for properly sealing an insertion hole into which a pin is inserted.
[Technical means to solve the problem]

In one embodiment, the disclosed plasma processing apparatus includes an insertion member having a first surface disposed on a vacuum space side and a second surface disposed on a non-vacuum space side, and formed to penetrate the first surface. And the insertion hole on the second surface; a pin that is inserted into the insertion hole and moves in the vertical direction; a movable member that is inserted by the pin and that is formed in a recess on a wall surface of the insertion hole that faces the pin, along the A first seal member is disposed between the movable member and the pin; and a second seal member is disposed between the movable member and the recess. When the pressing force of the first sealing member is locally compressed from the pin to the first sealing member, the movable member is allowed to move in a direction in which the pressing force is released.
[Effect of the invention]

According to the first aspect of the disclosed plasma processing apparatus, the effect of being able to appropriately seal the insertion hole into which the pin is inserted can be obtained.

Hereinafter, an embodiment of the disclosed plasma processing apparatus will be described in detail based on the drawings. The disclosure technique is not limited to this embodiment.

There have been known plasma processing apparatuses that use plasma to plasma process objects such as wafers. Such a plasma processing apparatus has, for example, a mounting table that holds a processing object that also serves as an electrode in a processing container that can constitute a vacuum space. The plasma processing device performs a plasma treatment on the object to be processed placed on the mounting table by applying a specific high-frequency power to the mounting table in a vacuum space formed in the processing container.

Here, the structure of the main part of the mounting base 130 in the prior art is demonstrated with reference to FIG. FIG. 8 is a schematic cross-sectional view showing a configuration of a main part of the mounting table 130 in the prior art. As shown in FIG. 8, an insertion hole 170 is formed in the mounting table 130 so as to penetrate the front surface and the back surface of the vacuum space side of the mounting table 130, and a pin 172 is inserted into the insertion hole 170. In the plasma processing apparatus, when transferring a wafer as an object to be processed, the pins 172 are protruded from the insertion holes 170, and the pins 172 support the wafer from the back surface to release the wafer from the mounting table 130.

A sealing member 286 such as an O-ring is provided on a wall surface of the insertion hole 170 facing the pin 172 along the circumferential direction of the insertion hole 170. The sealing member 286 seals the insertion hole 170 by being in contact with the pin 172. In the plasma processing apparatus, the insertion hole 170 is sealed by a sealing member 286, thereby maintaining the airtightness of the vacuum space in the processing container.

However, in the plasma processing apparatus, when the temperature of the mounting table is controlled according to various plasma treatments, the mounting table expands or contracts according to a change in temperature. Due to the expansion or contraction of the mounting table, the axis of the insertion hole of the mounting table is offset from the axis of the pin, so that the pin presses the sealing member locally on the sealing member provided in the insertion hole. If the sealing member is locally compressed, a gap may be generated between the uncompressed portion of the sealing member and the pin. As a result, it is difficult to sufficiently seal the insertion hole. For example, in the example shown in FIG. 8, the mounting table 130 expands in the radial direction of the mounting table 130 according to a temperature change, thereby locally compressing the sealing member 286, and the uncompressed portion of the sealing member 286 and the pin 172 Possibility of creating a gap between them. In addition, this problem is not limited to the mounting table, and may also occur similarly to other parts having an insertion hole into which a pin is inserted. When the insertion hole is not properly sealed, the airtightness of the vacuum space in the processing container may decrease.

(First Embodiment)
[Configuration of Plasma Processing Device]
FIG. 1 is a diagram showing a schematic configuration of a plasma processing apparatus according to a first embodiment. FIG. 1 shows a cross section of the plasma processing apparatus of the first embodiment.

As shown in FIG. 1, the plasma processing apparatus 10 is a parallel-plate-type plasma processing apparatus. The plasma processing apparatus 10 includes a processing container 12 configured in an airtight manner. The processing container 12 has a substantially cylindrical shape, and a processing space S in which a plasma is generated is divided as an internal space. The plasma processing apparatus 10 includes a mounting table 13 in a processing container 12. The upper surface of the mounting table 13 is formed as a mounting surface 54 d on which a semiconductor wafer (hereinafter referred to as a “wafer”) to be processed is mounted. In this embodiment, the mounting table 13 includes a base 14 and an electrostatic chuck 50. The base 14 has a substantially circular plate shape and is provided below the processing space S. The base 14 is made of, for example, aluminum, and has a function as a lower electrode.

The electrostatic chuck 50 is disposed on the upper surface of the base 14. The upper surface of the electrostatic chuck 50 has a flat disk shape, and the upper surface corresponds to the mounting surface 54d on which the wafer W is mounted. The electrostatic chuck 50 includes an electrode 54a and an insulator 54b. The electrode 54a is provided inside the insulator 54b, and a DC power source 56 is connected to the electrode 54a via a switch SW. A DC voltage is applied from the DC power source 56 to the electrode 54 a, thereby generating a Coulomb force, and the wafer W is sucked and held on the electrostatic chuck 50 by the Coulomb force. The electrostatic chuck 50 includes a heater 54c inside the insulator 54b. The heater 54c heats the electrostatic chuck 50 by supplying power from a power feeding mechanism (not shown). Thereby, the temperatures of the mounting table 13 and the wafer W are controlled.

In this embodiment, the plasma processing apparatus 10 further includes a cylindrical holding portion 16 and a cylindrical supporting portion 17. The cylindrical holding portion 16 is in contact with the edge portions of the side surface and the bottom surface of the base 14 to hold the base 14. The cylindrical support portion 17 extends vertically from the bottom of the processing container 12 and supports the abutment 14 via the cylindrical holding portion 16.

A focus ring 18 is provided on the upper surface of the peripheral portion of the base 14. The focus ring 18 is a member for improving the in-plane uniformity of the processing accuracy of the wafer W. The focus ring 18 is a plate-like member having a substantially ring shape, and includes, for example, silicon, quartz, or silicon carbide.

In this embodiment, an exhaust passage 20 is formed between the side wall of the processing container 12 and the cylindrical support portion 17. A partition plate 22 is installed at the entrance or in the middle of the exhaust passage 20. An exhaust port 24 is provided at the bottom of the exhaust passage 20. The exhaust port 24 is defined by an exhaust pipe 28 embedded in the bottom of the processing container 12. An exhaust device 26 is connected to the exhaust pipe 28. The exhaust device 26 includes a vacuum pump. By operating the vacuum pump, the processing space S in the processing container 12 can be decompressed to a specific vacuum degree. Thereby, the processing space S in the processing container 12 is maintained in a vacuum environment. The processing space S is an example of a vacuum space. On the side wall of the processing container 12, a gate valve 30 for loading and unloading a wafer W inlet is installed.

A high-frequency power source 32 is electrically connected to the base 14 via a matching device 34. The high-frequency power source 32 is a power source for generating plasma. A high-frequency power of a specific high frequency (for example, 13 MHz) is applied to the lower electrode, that is, the base 14. In addition, a refrigerant flow path (not shown) is formed inside the base 14, and the plasma processing apparatus 10 cools the mounting table 13 by circulating the refrigerant through the refrigerant flow path. Thereby, the temperatures of the mounting table 13 and the wafer W are controlled.

A plurality of, for example, three pin insertion holes 70 (only two pin insertion holes 70 are shown in FIG. 1) are provided on the mounting table 13, and pins 72 are respectively inserted into the pin insertion holes 70. The pin 72 is connected to the driving mechanism 74 and is driven in the vertical direction by the driving mechanism 74. The configuration of the mounting table 13 including the pin insertion holes 70 and the pins 72 will be described later.

The plasma processing apparatus 10 further includes a shower head 38 in the processing container 12. The shower head 38 is provided above the processing space S. The shower head 38 includes an electrode plate 40 and an electrode support 42.

The electrode plate 40 is a conductive plate having a substantially circular plate shape, and constitutes an upper electrode. The high-frequency power supply 35 is electrically connected to the electrode plate 40 through the matching device 36. The high-frequency power source 35 is a power source for generating plasma, and applies a high-frequency power of a specific high frequency (for example, 60 MHz) to the electrode plate 40. When high-frequency power is applied to the base 14 and the electrode plate 40 by the high-frequency power supply 32 and the high-frequency power supply 35, respectively, a high-frequency electric field is formed in the space between the base 14 and the electrode plate 40, that is, in the processing space S. Generate plasma.

A plurality of gas vent holes 40 h are formed in the electrode plate 40. The electrode plate 40 is detachably supported by an electrode support 42. A buffer chamber 42 a is provided inside the electrode support 42. The plasma processing apparatus 10 further includes a gas supply unit 44, and the gas supply unit 44 is connected to the gas introduction port 25 of the buffer chamber 42 a via a gas supply pipe 46. The gas supply unit 44 supplies a processing gas to the processing space S. The processing gas may be, for example, a processing gas for etching, or a processing gas for film formation. A plurality of holes are formed in the electrode support 42 continuously with the plurality of gas vent holes 40h, and the plurality of holes communicate with the buffer chamber 42a. The gas supplied from the gas supply unit 44 is supplied to the processing space S through the buffer chamber 42a and the gas vent hole 40h.

In this embodiment, a magnetic field forming mechanism 48 extending in a ring shape or a concentric shape is provided on the top wall of the processing container 12. This magnetic field forming mechanism 48 functions so that a high-frequency discharge in the processing space S can be easily started (plasma ignition) and the discharge can be stably maintained.

In this embodiment, the plasma processing apparatus 10 further includes a gas supply line 58 and a heat-conducting gas supply unit 62. The heat-conducting gas supply portion 62 is connected to a gas supply line 58. The gas supply line 58 extends to the upper surface of the electrostatic chuck 50 and extends in a ring shape on the upper surface. The heat-conducting gas supply unit 62 supplies a heat-conducting gas such as He gas between the upper surface of the electrostatic chuck 50 and the wafer W.

The plasma processing apparatus 10 configured as described above is controlled by the control unit 90 as a whole. The control unit 90 is provided with a process controller 91, a user interface 92, and a memory unit 93 including a CPU (Central Processing Unit) and controlling each unit of the plasma processing apparatus 10.

The user interface 92 includes a keyboard for a project manager to perform input operations for managing the plasma processing apparatus 10, and a display for visually displaying the operation status of the plasma processing apparatus 10.

A recipe is stored in the memory section 93. The recipe memorizes a control program (software) or processing condition data for realizing various processes performed by the plasma processing apparatus 10 under the control of the process controller 91. Moreover, as needed, an arbitrary recipe is called up from the memory section 93 by instructions from the user interface 92 and the process controller 91 is executed, thereby performing the required operation in the plasma processing apparatus 10 under the control of the process controller 91. deal with. In addition, recipes such as control programs or process condition data can also be used in a computer-readable storage medium (for example, hard disk, CD (Compact Disc), floppy disk, semiconductor memory, etc.). . In addition, recipes such as control programs or process condition data can also be transmitted online from other devices at any time via, for example, a dedicated line.

[Configuration of Mounting Table 13]
Next, the configuration of the main part of the mounting table 13 according to the first embodiment will be described with reference to FIG. 2. FIG. 2 is a schematic cross-sectional view showing a configuration of a main part of a mounting table 13 according to the first embodiment. As described above, the mounting table 13 includes the base table 14 and the electrostatic chuck 50, and is configured so that the pin 72 can be inserted through from below the base table 14 to above the electrostatic chuck 50. The mounting table 13 is an example of an insertion member.

The electrostatic chuck 50 is formed in a circular plate shape and is supported by the base 14. The upper surface of the electrostatic chuck 50 forms a mounting surface 54d on which the wafer W is mounted. The upper surface of the base 14 is bonded to the lower surface of the electrostatic chuck 50. A lower surface of the base 14 forms a rear surface 14 a opposite to the mounting surface 54 d.

A pin insertion hole 70 through which the pin 72 is inserted is formed in the mounting surface 54d. The pin insertion hole 70 penetrates the mounting surface 54d and the back surface 14a opposite to the mounting surface 54d. The pin insertion hole 70 is formed by a first through hole 76 and a second through hole 78. A first through-hole 76 is formed in the electrostatic chuck 50, and a second through-hole 78 is formed in the base 14. A recessed portion 82 is formed on a wall surface of the pin insertion hole 70 facing the pin 72.

The pin 72 is connected to the driving mechanism 74 shown in FIG. 1, and is moved in the pin insertion hole 70 in the vertical direction by the driving of the driving mechanism 74. The pin 72 can move freely from the mounting surface 54 d of the mounting table 13. That is, in a state where the pin 72 is raised, the front end of the pin 72 protrudes from the mounting surface 54d of the mounting table 13 and supports the wafer W. On the other hand, in a state where the pin 72 is lowered, the front end portion of the pin 72 is accommodated in the pin insertion hole 70, and the wafer W is placed on the mounting surface 54 d.

A movable member 84 is provided in the recessed portion 82 of the pin insertion hole 70. The movable member 84 has an opening portion into which the pin 72 is inserted, and is movably provided in the recessed portion 82 along the upper surface 82 a of the recessed portion 82 that intersects the axial direction of the pin 72.

A first sealing member 86 is disposed between the movable member 84 and the pin 72. In the pin insertion hole 70, a gap formed by the movable member 84 and the pin 72 that moves in the vertical direction in the pin insertion hole 70 is sealed by a first sealing member 86. The first sealing member 86 is, for example, an OmniSeal (registered trademark) or an O-ring.

A second sealing member 88 is disposed between the movable member 84 and the upper surface 82 a of the recessed portion 82. A gap formed by the movable member 84 and the upper surface 82 a of the recessed portion 82 is sealed in the pin insertion hole 70 by a second sealing member 88. The second sealing member 88 is, for example, an OmniSeal (registered trademark) or an O-ring.

The upper surface of the mounting table 13 is formed as a mounting surface 54d on which the wafer W is placed, and the lower surface of the mounting table 13 is formed as a back surface 14a opposite to the mounting surface 54d. The mounting surface 54d of the mounting table 13 is disposed on the processing space S side, which is a vacuum space maintained in a vacuum environment. On the other hand, the back surface 14 a of the mounting table 13 is disposed on the non-vacuum space side that is maintained in an atmospheric environment. The non-vacuum space is, for example, a space R surrounded by the inner side surface of the cylindrical holding portion 16. The processing space S and the space R communicate with each other through a pin insertion hole 70. The plasma processing apparatus 10 seals the pin insertion hole 70 by the first sealing member 86 and the second sealing member 88, thereby suppressing the inflow of air from the space R side into the processing space S (that is, the vacuum space in the processing container 12).

In addition, in the plasma processing apparatus 10, when the temperature of the mounting table 13 is controlled according to various types of plasma processing, the mounting table 13 expands or shrinks according to a change in temperature. Due to the expansion or contraction of the mounting table 13, the axis of the pin insertion hole 70 of the mounting table 13 and the axis of the pin 72 are offset, so the pin 72 acts on the first sealing member 86 to locally compress the pressing force of the first sealing member 86. pressure. If the first sealing member 86 is locally compressed, a gap may be generated between the uncompressed portion of the first sealing member 86 and the pin 72, and as a result, it is difficult to sufficiently seal the pin insertion hole 70.

FIG. 3 is a diagram for explaining the offset between the axis of the pin insertion hole 70 and the axis of the pin 72 of the mounting table 13. The mounting table 13 includes a mounting surface 54d and a back surface 14a opposite to the mounting surface 54d. In addition, a pin insertion hole 70 is formed in the mounting table 13 so as to penetrate the mounting surface 54d and the back surface 14a opposite to the mounting surface 54d. The temperature of the mounting table 13 is controlled by the heater 54c of the electrostatic chuck 50 and the refrigerant flow path (not shown) of the base table 14. In the plasma processing apparatus 10, when the temperature of the mounting table 13 is controlled, the mounting table 13 expands or contracts according to a temperature change. In this embodiment, it is assumed that the mounting table 13 expands in accordance with a temperature change. For example, in the plasma processing apparatus 10, the mounting table 13 expands in the radial direction of the mounting table 13 according to a temperature change. In FIG. 3, the expansion direction of the mounting table 13 is indicated by a white arrow. Since the mounting table 13 expands in the radial direction of the mounting table 13, the axis 70 a of the pin insertion hole 70 of the mounting table 13 is offset from the axis 72 a of the pin 72 in the radial direction of the mounting table 13. Therefore, the first sealing member 86 is pressed against the pin 72 by the mounting table 13, the second sealing member 88, and the movable member 84. Thereby, as a reaction force of a force pressing the first sealing member 86 against the pin 72, the pin 72 acts on the first sealing member 86 to locally compress the pressing force of the first sealing member 86. In FIG. 3, the pressing force for locally compressing the first sealing member 86 acts in a direction opposite to the expansion direction of the mounting table 13 (that is, the direction indicated by the white arrow), and the first compression is locally compressed by the pin 72. The right side portion of the sealing member 86. When the right side portion of the first sealing member 86 is locally compressed, a gap may be generated between the uncompressed left side portion of the first sealing member 86 and the pin 72, and the atmosphere may flow in through the gap.

Therefore, in the plasma processing apparatus 10, when the pressing force of the first sealing member 86 is locally compressed by the pin 72 acting on the first sealing member 86, the second sealing member 88 is allowed to release the pressing force. Movement of the movable member 84. For example, as shown in FIG. 3, it is assumed that the pressing force that locally compresses the first sealing member 86 acts in a direction opposite to the expansion direction of the mounting table 13 (that is, the direction indicated by the white arrow). In this case, the second sealing member 88 slides along the upper surface 82 a of the recessed portion 82 in a direction opposite to the expansion direction of the mounting table 13, thereby allowing movement of the movable member 84.

Thereby, since the pressing force that locally compresses the first sealing member 86 is released, a gap can be prevented from being generated between the uncompressed left side portion of the first sealing member 86 and the pin 72. As a result, even when the axis of the pin insertion hole 70 of the mounting table 13 and the axis of the pin 72 are offset, the plasma processing apparatus 10 can be properly sealed by the first sealing member 86 and the second sealing member 88. The pin insertion hole 70.

As described above, the plasma processing apparatus 10 according to the first embodiment includes the mounting table 13, the pin 72, the movable member 84, the first sealing member 86, and the second sealing member 88. The mounting table 13 has a mounting surface 54d arranged on the vacuum space side and a back surface 14a arranged on the non-vacuum space side, and a pin insertion hole 70 penetrating the mounting surface 54d and the back surface 14a is formed. The pin 72 is inserted into the pin insertion hole 70 and moves in the vertical direction. The movable member 84 is inserted into the pin 72 and is movably provided in the recessed portion 82 formed in the wall surface of the pin insertion hole 70 facing the pin 72 along the upper surface 82 a of the recessed portion 82 that intersects with the axis direction of the pin 72. The first sealing member 86 is disposed between the movable member 84 and the pin 72. The second seal member 88 is disposed between the movable member 84 and the upper surface 82a of the recessed portion 82. When the pressing force of the first seal member 86 is locally compressed by the pin 72 acting on the first seal member 86, the second seal member 88 is released. The pressing member allows the movable member 84 to move. This allows the plasma processing apparatus 10 to use the first sealing member even when the axis of the pin insertion hole 70 of the mounting table 13 and the axis of the pin 72 are offset as the mounting table 13 expands or contracts. 86 and the second sealing member 88 appropriately seal the pin insertion hole 70.

An evaluation experiment performed to verify the effect of the plasma processing apparatus 10 according to the first embodiment will be described below.

[Evaluation device]
First, the evaluation device 500 used in the evaluation experiment will be described. FIG. 6 is a diagram illustrating a configuration example of the evaluation device 500. The evaluation device 500 shown in FIG. 6 includes an experiment container 121. The experiment container 121 is formed in a substantially cylindrical shape and has an opening at the bottom. A sample 510 is mounted on the opening of the experimental container 121. Since the sample 510 is installed in the opening of the experimental container 121, a space Q is formed inside the experimental container 121.

The sample 510 includes a bottom plate 141, a pin 72, a movable member 84, a first sealing member 86, and a second sealing member 88. The bottom plate 141, the pin 72, the movable member 84, the first sealing member 86, and the second sealing member 88 are respectively different from the mounting table 13, the pin 72, the movable member 84, the first sealing member 86, and the second sealing member 88 shown in FIG. 2. correspond.

An exhaust port 121 a is formed on a side wall of the experimental container 121, and a vacuum pump 123 is connected to the exhaust port 121 a via an exhaust pipe 122. An on-off valve 122 a is provided in the exhaust pipe 122. The vacuum pump 123 is configured to reduce the pressure in the experimental container 121 to a specific vacuum degree. The degree of vacuum (pressure) of the experimental container 121 was measured by a pressure gauge 121b.

[Evaluation experiment]
In the evaluation experiment, the sample 510 was mounted on the evaluation device 500, and the steps (1) to (6) shown below were sequentially performed to measure the amount of air flowing into the space Q from the pin insertion hole 70 of the base plate 141 Hereafter referred to as "leakage amount"). Sample 510 corresponds to the plasma processing apparatus 10 of the first embodiment.

Step (1): The vacuum degree of the experimental container 121 is reduced to about 2.5 Pa by the vacuum pump 123.
Step (2): Offset the axis 72a of the pin 72 with respect to the axis 70a of the pin insertion hole 70 of the bottom plate 141 in the radial direction of the bottom plate 141.
Step (3): Close the on-off valve 122a.
Step (4): The driving mechanism 74 causes the pin 72 to reciprocate 100 times in a range of 5 mm in the vertical direction for 10 minutes.
Step (5): After performing step (4) for 10 minutes, the vacuum degree (pressure) of the experimental container 121 is measured by the pressure gauge 121b.
Step (6): Multiply the amount of increase in vacuum (pressure) of the experimental container 121 during 10 minutes (= 600 seconds) of step (4) by the volume of the experimental container 121 to calculate the leakage amount (Pa · m ³ / sec).

[Comparative experiment]
In the comparison experiment, a comparative sample was mounted on the evaluation device 500, and the steps (1) to (6) were sequentially performed to measure the amount of leakage. The comparative sample corresponds to a plasma processing apparatus having a mounting table 130 (see FIG. 8) in the prior art, and instead of the movable member 84, the first sealing member 86, and the second sealing member 88, a single seal is provided around the pin 72. The point of the member 286 is different from that of the sample 510.

FIG. 7 is a diagram showing an example of the relationship between the amount of displacement of the shaft 72a of the pin 72 and the amount of leakage. FIG. 7 is a result of measuring the amount of leakage by changing the offset amount of the shaft 72a of the pin 72. In FIG. 7, the “comparative example” is a leakage amount corresponding to a comparative experiment, and the “example” is a leakage amount corresponding to an evaluation experiment.

As shown in FIG. 7, in a comparative experiment, when the offset amount of the shaft 72 a of the pin 72 is 0.1 mm, the leakage amount exceeds the range of a predetermined allowable specification. In contrast, in the evaluation experiment, even when the offset amount of the shaft 72a of the pin 72 is 0.9 mm, the leakage amount falls within a predetermined allowable specification range. That is, it can be confirmed that even when the shaft 70a of the pin insertion hole 70 of the mounting table 13 and the shaft 72a of the pin 72 are offset, the pin seal can be properly sealed by the first seal member 86 and the second seal member 88. Insert hole 70.

(Second Embodiment)
Next, a second embodiment will be described. The plasma processing apparatus 10 according to the second embodiment has the same configuration as that of the plasma processing apparatus 10 according to the first embodiment except for the configuration of the mounting table 13. Therefore, in the second embodiment, the same reference numerals are used for constituent elements that are common to the above-mentioned first embodiment, and detailed descriptions thereof are omitted.

[Configuration of Mounting Table 13]
Referring to Fig. 4 and Fig. 5, the configuration of the main part of the mounting table 13 according to the second embodiment will be described. FIG. 4 is a perspective view showing a configuration of a main part of the mounting table 13 according to the second embodiment. As shown in FIG. 4, the mounting table 13 includes a first mounting table 102 and a second mounting table 107 provided on the outer periphery of the first mounting table 102. The first mounting table 102 and the second mounting table 107 are arranged so as to be coaxial with each other.

The first mounting table 102 includes a base table 103. The base 103 is formed in a cylindrical shape, and the above-mentioned electrostatic chuck 50 is arranged on one surface 103 a in the axial direction. The base 103 is provided with a flange portion 200 that protrudes outward along the outer periphery. The abutment 103 of the present embodiment is formed with a protruding portion 201 that extends outward from the central portion of the lateral side surface to the lower side and projects outward, and a lower portion of the protruding portion of the lateral surface is provided with a projecting outward. The flange portion 200. The flange portion 200 is formed with through holes 210 penetrating in the axial direction at three or more positions in the circumferential direction of the upper surface. In the flange portion 200 of the present embodiment, three through holes 210 are formed at regular intervals in the circumferential direction. The through hole 210 functions as a pin insertion hole into which a pin 220 to be described later is inserted. The first mounting table 102 is an example of an insertion member.

The second mounting table 107 includes a base 108. The abutment 108 is formed in a cylindrical shape having an inner diameter larger than the outer diameter of the surface 103a of the abutment 103 by a specific size, and the above-mentioned focus ring 18 is arranged on one surface 108a in the axial direction. The base 108 is provided with pins 220 on the lower surface at the same distance as the through holes 210 of the flange portion 200. In the base 108 of the present embodiment, three pins 220 are fixed on the lower surface in the circumferential direction at regular intervals. The abutment 108 is an example of a common member.

The base table 108 is coaxial with the base table 103, and is arranged on the flange portion 200 of the base table 103 so that the pins 220 are inserted into the through holes 210 so as to be aligned in the circumferential direction.

FIG. 5 is a schematic cross-sectional view showing the configuration of the main parts of the first mounting table 102 and the second mounting table 107 in the second embodiment. The example of FIG. 5 is a cross-sectional view showing the first mounting table 102 and the second mounting table 107 at the positions of the through holes 210.

The abutment 103 is supported by a support 104 of an insulator. A through hole 210 is formed in the base 103 and the support 104.

The through hole 210 is formed with a step 211 having a smaller diameter from the center to the lower portion than the upper portion. The pin 220 corresponds to the through hole 210 and has a smaller diameter from the center to the lower portion than the upper portion.

The base 108 is disposed on the flange portion 200 of the base 103. The base 108 has a larger outer diameter than the base 103, and a ring portion 221 protruding downward is formed on a portion of the lower surface facing the base 103 that is larger than the outer diameter of the base 103. When the base 108 is arranged on the flange portion 200 of the base 103, the ring portion 221 is formed so as to cover the side surface of the flange portion 200.

The pin 220 is inserted into the through hole 210. Each of the through holes 210 is provided with an elevating mechanism 120 for elevating the second mounting table 107. For example, the base table 103 is provided with a lifting mechanism 120 for lifting and lowering the pin 220 below the respective through holes 210. The elevating mechanism 120 has an actuator built therein, and the lever 120a is extended and contracted by the driving force of the actuator, thereby raising and lowering the pin 220. The pin 220 moves up and down in the through-hole 210 by being lifted and lowered by the lift mechanism 120.

A recessed portion 182 is formed on a wall surface of the through hole 210 opposite to the pin 220. A movable member 184 is provided in the recessed portion 182. The movable member 184 has an opening portion into which the pin 220 is inserted, and is movably provided in the recessed portion 182 along the upper surface 182 a of the recessed portion 182 crossing the axial direction of the pin 220.

A first sealing member 186 is disposed between the movable member 184 and the pin 220. In the through-hole 210, a gap formed by the movable member 184 and the pin 220 that moves in the up-down direction in the through-hole 210 is sealed by a first sealing member 186. The first sealing member 186 is, for example, an OmniSeal (registered trademark) or an O-ring.

A second sealing member 188 is disposed between the movable member 184 and the upper surface 182 a of the recessed portion 182. A gap formed by the movable member 184 and the upper surface 182 a of the recessed portion 182 in the through hole 210 is sealed by a second sealing member 188. The second sealing member 188 is, for example, an OmniSeal (registered trademark) or an O-ring.

The first mounting table 102 maintains the space below the atmosphere. For example, a space 270 is formed at the lower portion of the support table 104, and the space 270 is maintained as an atmospheric environment. The upper surface of the first mounting table 102 (for example, the upper surface of the flange portion 200 of the base table 103) is disposed on the processing space S side, which is a vacuum space maintained in a vacuum environment. On the other hand, the lower surface of the first mounting table 102 (for example, the lower surface of the support table 104) is disposed on the space 270 side, which is a non-vacuum space maintained as an atmospheric environment. The processing space S and the space 270 communicate with each other through the through hole 210. The plasma processing apparatus 10 seals the through-hole 210 with the first sealing member 186 and the second sealing member 188, thereby suppressing the inflow of air from the space 270 side into the processing space S (ie, the vacuum space in the processing container 12).

In addition, in the plasma processing apparatus 10, when the three pins 220 are fixed to the lower surface of the base 108 by machining, the axis of any pin 220 among the three pins 220 may be relative to the arbitrary pin 220. When the axis of the inserted through hole 210 is shifted. When the axis of the arbitrary pin 220 is offset from the axis of the through-hole 210 into which the arbitrary pin 220 is inserted, the pressing force of the first sealing member 186 is locally compressed from the arbitrary pin 220 to the first sealing member 186. When the first sealing member 186 is locally compressed, a gap may be generated between the uncompressed portion of the first sealing member 186 and any of the pins 220, and as a result, it is difficult to sufficiently seal the through hole 210.

Therefore, in the plasma processing apparatus 10, when the pressing force of the first sealing member 186 is locally compressed by the pin 220 acting on the first sealing member 186, the second sealing member 188 is allowed to release the pressing force. Movement of the movable member 184. For example, suppose a case where the pressing force of the first sealing member 186 is locally compressed in the same direction as the offset direction of the axis of the arbitrary pin 220. In this case, the second sealing member 188 slides along the upper surface 182a of the recessed portion 182 in the same direction as the offset direction of the axis of the arbitrary pin 220, thereby allowing movement of the movable member 184.

Thereby, since the pressing force for locally compressing the first sealing member 186 is released, a gap can be prevented from occurring between the uncompressed portion of the first sealing member 186 and the pin 220. As a result, even when the axis of the through-hole 210 of the first mounting table 102 and the axis of the pin 220 are offset, the plasma processing apparatus 10 can be properly sealed by the first sealing member 186 and the second sealing member 188.通 孔 210。 The through hole 210.

10‧‧‧ Plasma treatment device

12‧‧‧handling container

13‧‧‧mounting table

14‧‧‧ abutment

14a‧‧‧Back

16‧‧‧ tubular support

17‧‧‧ tubular support

18‧‧‧ focus ring

20‧‧‧Exhaust passage

22‧‧‧ bulkhead

24‧‧‧ exhaust port

25‧‧‧Gas inlet

26‧‧‧Exhaust

28‧‧‧ exhaust pipe

30‧‧‧Gate Valve

32‧‧‧High Frequency Power

34‧‧‧ Matcher

35‧‧‧High Frequency Power

36‧‧‧ Matcher

38‧‧‧ shower head

40‧‧‧electrode plate

40a‧‧‧Buffer Room

40h‧‧‧gas vent

42‧‧‧ electrode support

42a‧‧‧Buffer Room

44‧‧‧Gas Supply Department

46‧‧‧Gas supply duct

48‧‧‧ Magnetic field formation mechanism

50‧‧‧ electrostatic chuck

54a‧‧‧electrode

54b‧‧‧ insulator

54c‧‧‧heater

54d‧‧‧mounting surface

56‧‧‧DC Power

58‧‧‧Gas supply line

62‧‧‧Heat conduction gas supply department

70‧‧‧pin insertion holes

70a‧‧‧axis

72‧‧‧pin

72a‧‧‧axis

74‧‧‧Drive mechanism

76‧‧‧The first through hole

78‧‧‧ 2nd through hole

82‧‧‧ recess

82a‧‧‧upper surface

84‧‧‧ movable member

86‧‧‧The first sealing member

88‧‧‧Second sealing member

90‧‧‧Control Department

91‧‧‧Process Controller

92‧‧‧user interface

93‧‧‧Memory Department

102‧‧‧The first mounting table

103‧‧‧ abutment

103a‧‧‧ surface

104‧‧‧Support Desk

107‧‧‧ 2nd stage

108‧‧‧ abutment

108a‧‧‧ surface

120‧‧‧Lifting mechanism

120a‧‧‧

121‧‧‧ Experimental container

121a‧‧‧ exhaust port

121b‧‧‧Pressure gauge

122‧‧‧Exhaust pipe

122a‧‧‧On-off valve

123‧‧‧Vacuum pump

130‧‧‧mounting table

141‧‧‧ floor

170‧‧‧ insertion hole

172‧‧‧pin

182‧‧‧concave

182a‧‧‧upper surface

184‧‧‧movable member

186‧‧‧The first sealing member

188‧‧‧Second sealing member

200‧‧‧ flange

201‧‧‧ extension

210‧‧‧through hole

Tier 211‧‧‧

220‧‧‧pin

221‧‧‧Ring

270‧‧‧space

286‧‧‧sealing member

500‧‧‧ evaluation device

510‧‧‧sample

Q‧‧‧ space

R‧‧‧ space

S‧‧‧ processing space

SW‧‧‧Switch

W‧‧‧ Wafer

FIG. 1 is a diagram showing a schematic configuration of a plasma processing apparatus according to a first embodiment.

Fig. 2 is a schematic cross-sectional view showing a configuration of a main part of a mounting table in the first embodiment.

FIG. 3 is a diagram for explaining the offset between the axis of a pin insertion hole for a mounting table and the axis of a pin.

Fig. 4 is a perspective view showing a configuration of a main part of a mounting table according to a second embodiment.

FIG. 5 is a schematic cross-sectional view showing the configuration of the main parts of the first mounting table and the second mounting table in the second embodiment.

FIG. 6 is a diagram showing a configuration example of an evaluation device.

FIG. 7 is a diagram showing an example of the relationship between the amount of displacement of the shaft of the pin and the amount of leakage.

FIG. 8 is a schematic cross-sectional view showing a configuration of a main part of a mounting table in the prior art.

Claims (4)

A plasma processing device is characterized by having: The insertion member has a first surface disposed on the vacuum space side and a second surface disposed on the non-vacuum space side, and an insertion hole penetrating the first surface and the second surface is formed; A pin that is inserted into the above-mentioned insertion hole and moves in the up-down direction; A movable member for inserting the pin, and movably provided in a recess formed in a wall surface of the insertion hole opposite to the pin, along a surface of the recess that intersects with the axis direction of the pin; A first seal member disposed between the movable member and the pin; The second sealing member is disposed between the movable member and the surface of the recessed portion, and is released when the pressing force of the first sealing member is locally compressed from the pin acting on the first sealing member. The direction of the pressing force allows movement of the movable member. The plasma processing apparatus of claim 1, wherein the above-mentioned insertion member expands or contracts according to a temperature change, The pressing force for locally compressing the first sealing member acts in a direction opposite to the expansion direction or contraction direction of the insertion member. The second sealing member slides along the surface of the recess in a direction opposite to the expansion direction or contraction direction of the insertion member, thereby allowing the movable member to move. The plasma processing apparatus according to claim 1, wherein the insertion hole is formed with a plurality of insertion members, There are a plurality of above-mentioned pins, The plurality of pins are fixed to a common member, The axis of any of the plurality of pins is offset relative to the axis of the above-mentioned insertion hole through which any of the pins is inserted, The pressing force for locally compressing the first sealing member acts in the same direction as the offset direction of the axis of the arbitrary pin. The second sealing member slides along the surface of the recessed portion in the same direction as the offset direction of the axis of the arbitrary pin, thereby allowing movement of the movable member. The plasma processing apparatus according to any one of claims 1 to 3, wherein the first sealing member and the second sealing member are an OmniSeal (registered trademark) or an O-ring.