TW201936013A - Plasma processing apparatus - Google Patents
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- TW201936013A TW201936013A TW108104555A TW108104555A TW201936013A TW 201936013 A TW201936013 A TW 201936013A TW 108104555 A TW108104555 A TW 108104555A TW 108104555 A TW108104555 A TW 108104555A TW 201936013 A TW201936013 A TW 201936013A
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Abstract
Description
本發明係關於一種電漿處理裝置。The invention relates to a plasma processing device.
自先前以來,悉知使用電漿對晶圓等被處理體進行電漿處理之電漿處理裝置。此種電漿處理裝置例如於可構成真空空間之處理容器內,具有保持兼作電極之被處理體之載置台。電漿處理裝置於形成於處理容器內之真空空間,藉由對載置台施加特定之高頻電力,對配置於載置台之被處理體進行電漿處理。於載置台形成有貫通載置台之真空空間側之正面及其背面之插入孔,銷插入於插入孔。於電漿處理裝置中,於搬送被處理體之情形時,使銷自插入孔突出,以銷自背面支持被處理體而使被處理體自載置台脫離。There have been known plasma processing apparatuses that use plasma to plasma process objects such as wafers. Such a plasma processing apparatus has, for example, a mounting table that holds a processing object that also serves as an electrode in a processing container that can constitute a vacuum space. The plasma processing device performs a plasma treatment on the object to be processed placed on the mounting table by applying a specific high-frequency power to the mounting table in a vacuum space formed in the processing container. An insertion hole penetrating the front surface and the back surface of the vacuum space side of the mounting table is formed in the mounting table, and a pin is inserted into the insertion hole. In the plasma processing apparatus, when the object to be processed is transported, the pins protrude from the insertion holes, and the pins support the object from the back surface to release the object from the mounting table.
於插入孔之與銷對向之壁面,沿著插入孔之圓周方向設置有O形環等密封構件。密封構件藉由與銷接觸而密封插入孔。於電漿處理裝置中,藉由密封構件密封插入孔,藉此維持處理容器內之真空空間之氣密性。
[先前技術文獻]
[專利文獻]A sealing member such as an O-ring is provided on a wall surface of the insertion hole facing the pin along a circumferential direction of the insertion hole. The sealing member seals the insertion hole by being in contact with the pin. In the plasma processing apparatus, the insertion hole is sealed by a sealing member, thereby maintaining the airtightness of the vacuum space in the processing container.
[Prior technical literature]
[Patent Literature]
[專利文獻1]日本專利特開2013-42012號公報[Patent Document 1] Japanese Patent Laid-Open No. 2013-42012
[發明所欲解決之問題][Problems to be solved by the invention]
本發明提供一種可適當地密封供銷插入之插入孔之技術。
[解決問題之技術手段]The present invention provides a technique for properly sealing an insertion hole into which a pin is inserted.
[Technical means to solve the problem]
於1實施態樣中,所揭示之電漿處理裝置具有:插入構件,其具有配置於真空空間側之第1面及配置於非真空空間側之第2面,且形成有貫通上述第1面及上述第2面之插入孔;銷,其插入上述插入孔,於上下方向上移動;可動構件,其供上述銷插入,且於形成於上述插入孔之與上述銷對向之壁面凹部,沿著該凹部之與上述銷之軸方向交叉之面可移動地設置;第1密封構件,其配置於上述可動構件與上述銷之間;及第2密封構件,其配置於上述可動構件與上述凹部之上述面之間,且於自上述銷向上述第1密封構件局部性地壓縮上述第1密封構件之按壓力發揮作用之情形時,向釋放該按壓力之方向容許上述可動構件之移動。
[發明之效果]In one embodiment, the disclosed plasma processing apparatus includes an insertion member having a first surface disposed on a vacuum space side and a second surface disposed on a non-vacuum space side, and formed to penetrate the first surface. And the insertion hole on the second surface; a pin that is inserted into the insertion hole and moves in the vertical direction; a movable member that is inserted by the pin and that is formed in a recess on a wall surface of the insertion hole that faces the pin, along the A first seal member is disposed between the movable member and the pin; and a second seal member is disposed between the movable member and the recess. When the pressing force of the first sealing member is locally compressed from the pin to the first sealing member, the movable member is allowed to move in a direction in which the pressing force is released.
[Effect of the invention]
根據所揭示之電漿處理裝置之1態樣,可獲得能夠適當地密封供銷插入之插入孔之效果。According to the first aspect of the disclosed plasma processing apparatus, the effect of being able to appropriately seal the insertion hole into which the pin is inserted can be obtained.
以下,對所揭示之電漿處理裝置之實施形態,基於圖式詳細地進行說明。再者,揭示技術並不受本實施形態限定。Hereinafter, an embodiment of the disclosed plasma processing apparatus will be described in detail based on the drawings. The disclosure technique is not limited to this embodiment.
自先前以來,悉知使用電漿對晶圓等被處理體進行電漿處理之電漿處理裝置。此種電漿處理裝置例如於可構成真空空間之處理容器內,具有保持兼作電極之被處理體之載置台。電漿處理裝置於形成於處理容器內之真空空間,藉由對載置台施加特定之高頻電力,對配置於載置台之被處理體進行電漿處理。There have been known plasma processing apparatuses that use plasma to plasma process objects such as wafers. Such a plasma processing apparatus has, for example, a mounting table that holds a processing object that also serves as an electrode in a processing container that can constitute a vacuum space. The plasma processing device performs a plasma treatment on the object to be processed placed on the mounting table by applying a specific high-frequency power to the mounting table in a vacuum space formed in the processing container.
此處,參照圖8對先前技術中之載置台130之要部構成進行說明。圖8係表示先前技術中之載置台130之要部構成的概略剖視圖。如圖8所示,於載置台130,形成有貫通載置台130之真空空間側之正面及其背面之插入孔170,銷172插入於插入孔170。於電漿處理裝置中,於搬送作為被處理體之晶圓之情形時,使銷172自插入孔170突出,以銷172自背面支持晶圓而使晶圓自載置台130脫離。Here, the structure of the main part of the mounting base 130 in the prior art is demonstrated with reference to FIG. FIG. 8 is a schematic cross-sectional view showing a configuration of a main part of the mounting table 130 in the prior art. As shown in FIG. 8, an insertion hole 170 is formed in the mounting table 130 so as to penetrate the front surface and the back surface of the vacuum space side of the mounting table 130, and a pin 172 is inserted into the insertion hole 170. In the plasma processing apparatus, when transferring a wafer as an object to be processed, the pins 172 are protruded from the insertion holes 170, and the pins 172 support the wafer from the back surface to release the wafer from the mounting table 130.
於插入孔170之與銷172對向之壁面,沿著插入孔170之圓周方向設置有O形環等密封構件286。密封構件286藉由與銷172接觸而密封插入孔170。於電漿處理裝置中,藉由密封構件286密封插入孔170,藉此維持處理容器內之真空空間之氣密性。A sealing member 286 such as an O-ring is provided on a wall surface of the insertion hole 170 facing the pin 172 along the circumferential direction of the insertion hole 170. The sealing member 286 seals the insertion hole 170 by being in contact with the pin 172. In the plasma processing apparatus, the insertion hole 170 is sealed by a sealing member 286, thereby maintaining the airtightness of the vacuum space in the processing container.
然而,於電漿處理裝置中,於根據各種電漿處理而控制載置台之溫度之情形時,載置台根據溫度變化而膨脹或收縮。因載置台膨脹或收縮而導致載置台之插入孔之軸與銷之軸偏移,由此自銷向設置於插入孔之密封構件作用局部性地壓縮密封構件之按壓力。若局部性地壓縮密封構件,則有於密封構件之未壓縮之部分與銷之間產生間隙之可能性,其結果,有導致難以充分地密封插入孔之問題。例如,於圖8所示之例中,載置台130根據溫度變化而於載置台130之徑向上膨脹,藉此局部性地壓縮密封構件286,有於密封構件286之未壓縮之部分與銷172之間產生間隙之可能性。再者,該問題不限於載置台,亦可同樣地產生於形成有供銷插入之插入孔之其他零件。於未適當地密封插入孔之情形時,有處理容器內之真空空間之氣密性降低之虞。However, in the plasma processing apparatus, when the temperature of the mounting table is controlled according to various plasma treatments, the mounting table expands or contracts according to a change in temperature. Due to the expansion or contraction of the mounting table, the axis of the insertion hole of the mounting table is offset from the axis of the pin, so that the pin presses the sealing member locally on the sealing member provided in the insertion hole. If the sealing member is locally compressed, a gap may be generated between the uncompressed portion of the sealing member and the pin. As a result, it is difficult to sufficiently seal the insertion hole. For example, in the example shown in FIG. 8, the mounting table 130 expands in the radial direction of the mounting table 130 according to a temperature change, thereby locally compressing the sealing member 286, and the uncompressed portion of the sealing member 286 and the pin 172 Possibility of creating a gap between them. In addition, this problem is not limited to the mounting table, and may also occur similarly to other parts having an insertion hole into which a pin is inserted. When the insertion hole is not properly sealed, the airtightness of the vacuum space in the processing container may decrease.
(第1實施形態)
[電漿處理裝置之構成]
圖1係表示第1實施形態之電漿處理裝置之概略性之構成的圖。於圖1中,表示有第1實施形態之電漿處理裝置之剖面。(First Embodiment)
[Configuration of Plasma Processing Device]
FIG. 1 is a diagram showing a schematic configuration of a plasma processing apparatus according to a first embodiment. FIG. 1 shows a cross section of the plasma processing apparatus of the first embodiment.
如圖1所示,電漿處理裝置10係平行平板型之電漿處理裝置。電漿處理裝置10具備氣密地構成之處理容器12。處理容器12具有大致圓筒形狀,區劃有產生電漿之處理空間S作為其內部空間。電漿處理裝置10於處理容器12內具備載置台13。載置台13之上表面形成為載置作為被處理體之半導體晶圓(以下稱為「晶圓」)W之載置面54d。於本實施形態中,載置台13具有基台14及靜電吸盤50。基台14具有大致圓板形狀,設置於處理空間S之下方。基台14係例如鋁制,具有作為下部電極之功能。As shown in FIG. 1, the plasma processing apparatus 10 is a parallel-plate-type plasma processing apparatus. The plasma processing apparatus 10 includes a processing container 12 configured in an airtight manner. The processing container 12 has a substantially cylindrical shape, and a processing space S in which a plasma is generated is divided as an internal space. The plasma processing apparatus 10 includes a mounting table 13 in a processing container 12. The upper surface of the mounting table 13 is formed as a mounting surface 54 d on which a semiconductor wafer (hereinafter referred to as a “wafer”) to be processed is mounted. In this embodiment, the mounting table 13 includes a base 14 and an electrostatic chuck 50. The base 14 has a substantially circular plate shape and is provided below the processing space S. The base 14 is made of, for example, aluminum, and has a function as a lower electrode.
靜電吸盤50設置於基台14之上表面。靜電吸盤50之上表面為平坦之圓盤狀,該上表面相當於載置晶圓W之載置面54d。靜電吸盤50具有電極54a及絕緣體54b。電極54a設置於絕緣體54b之內部,於電極54a,經由開關SW連接有直流電源56。自直流電源56對電極54a賦予直流電壓,藉此產生庫倫力,藉由該庫倫力,晶圓W被吸附保持於靜電吸盤50上。又,靜電吸盤50於絕緣體54b之內部具有加熱器54c。藉由自未圖示之饋電機構供給電力,加熱器54c加熱靜電吸盤50。藉此,控制載置台13及晶圓W之溫度。The electrostatic chuck 50 is disposed on the upper surface of the base 14. The upper surface of the electrostatic chuck 50 has a flat disk shape, and the upper surface corresponds to the mounting surface 54d on which the wafer W is mounted. The electrostatic chuck 50 includes an electrode 54a and an insulator 54b. The electrode 54a is provided inside the insulator 54b, and a DC power source 56 is connected to the electrode 54a via a switch SW. A DC voltage is applied from the DC power source 56 to the electrode 54 a, thereby generating a Coulomb force, and the wafer W is sucked and held on the electrostatic chuck 50 by the Coulomb force. The electrostatic chuck 50 includes a heater 54c inside the insulator 54b. The heater 54c heats the electrostatic chuck 50 by supplying power from a power feeding mechanism (not shown). Thereby, the temperatures of the mounting table 13 and the wafer W are controlled.
於本實施形態中,電漿處理裝置10進而具備筒狀保持部16及筒狀支持部17。筒狀保持部16與基台14之側面及底面之緣部相接而保持基台14。筒狀支持部17自處理容器12之底部於垂直方向上延伸,經由筒狀保持部16支持基台14。In this embodiment, the plasma processing apparatus 10 further includes a cylindrical holding portion 16 and a cylindrical supporting portion 17. The cylindrical holding portion 16 is in contact with the edge portions of the side surface and the bottom surface of the base 14 to hold the base 14. The cylindrical support portion 17 extends vertically from the bottom of the processing container 12 and supports the abutment 14 via the cylindrical holding portion 16.
於基台14之周緣部分之上表面設置有聚焦環18。聚焦環18係用於改善晶圓W之處理精度之面內均勻性之構件。聚焦環18係具有大致環形狀之板狀構件,包含例如矽、石英、或碳化矽。A focus ring 18 is provided on the upper surface of the peripheral portion of the base 14. The focus ring 18 is a member for improving the in-plane uniformity of the processing accuracy of the wafer W. The focus ring 18 is a plate-like member having a substantially ring shape, and includes, for example, silicon, quartz, or silicon carbide.
於本實施形態中,於處理容器12之側壁與筒狀支持部17之間形成有排氣通路20。於排氣通路20之入口或其中途安裝有隔板22。又,於排氣通路20之底部設置有排氣口24。排氣口24由嵌入於處理容器12之底部之排氣管28區劃成。於該排氣管28連接有排氣裝置26。排氣裝置26具有真空泵,藉由使真空泵作動,可使處理容器12內之處理空間S減壓至特定之真空度為止。藉此,處理容器12內之處理空間S保持於真空環境中。處理空間S係真空空間之一例。於處理容器12之側壁,安裝有開關晶圓W之搬入出口之閘閥30。In this embodiment, an exhaust passage 20 is formed between the side wall of the processing container 12 and the cylindrical support portion 17. A partition plate 22 is installed at the entrance or in the middle of the exhaust passage 20. An exhaust port 24 is provided at the bottom of the exhaust passage 20. The exhaust port 24 is defined by an exhaust pipe 28 embedded in the bottom of the processing container 12. An exhaust device 26 is connected to the exhaust pipe 28. The exhaust device 26 includes a vacuum pump. By operating the vacuum pump, the processing space S in the processing container 12 can be decompressed to a specific vacuum degree. Thereby, the processing space S in the processing container 12 is maintained in a vacuum environment. The processing space S is an example of a vacuum space. On the side wall of the processing container 12, a gate valve 30 for loading and unloading a wafer W inlet is installed.
於基台14,經由匹配器34電性連接有高頻電源32。高頻電源32係電漿產生用之電源,將特定之高頻率(例如13 MHz)之高頻電力施加於下部電極,即基台14。又,於基台14之內部形成有未圖示之冷媒流路,電漿處理裝置10藉由使冷媒於冷媒流路循環而冷卻載置台13。藉此,控制載置台13及晶圓W之溫度。A high-frequency power source 32 is electrically connected to the base 14 via a matching device 34. The high-frequency power source 32 is a power source for generating plasma. A high-frequency power of a specific high frequency (for example, 13 MHz) is applied to the lower electrode, that is, the base 14. In addition, a refrigerant flow path (not shown) is formed inside the base 14, and the plasma processing apparatus 10 cools the mounting table 13 by circulating the refrigerant through the refrigerant flow path. Thereby, the temperatures of the mounting table 13 and the wafer W are controlled.
於載置台13設置有複數個,例如3個銷用插入孔70(於圖1中僅表示2個銷用插入孔70。),於該等銷用插入孔70分別插入有銷72。銷72與驅動機構74連接,且藉由驅動機構74於上下方向驅動。對包含銷用插入孔70及銷72之載置台13之構成將於下文敍述。A plurality of, for example, three pin insertion holes 70 (only two pin insertion holes 70 are shown in FIG. 1) are provided on the mounting table 13, and pins 72 are respectively inserted into the pin insertion holes 70. The pin 72 is connected to the driving mechanism 74 and is driven in the vertical direction by the driving mechanism 74. The configuration of the mounting table 13 including the pin insertion holes 70 and the pins 72 will be described later.
電漿處理裝置10進而於處理容器12內具備簇射頭38。簇射頭38設置於處理空間S之上方。簇射頭38包含電極板40及電極支持體42。The plasma processing apparatus 10 further includes a shower head 38 in the processing container 12. The shower head 38 is provided above the processing space S. The shower head 38 includes an electrode plate 40 and an electrode support 42.
電極板40係具有大致圓板形狀之導電性之板,構成上部電極。高頻電源35經由匹配器36與電極板40電性連接。高頻電源35係電漿產生用之電源,將特定之高頻率(例如60 MHz)之高頻電力施加於電極板40。當藉由高頻電源32及高頻電源35分別對基台14及電極板40賦予高頻電力時,於基台14與電極板40之間之空間,即於處理空間S形成高頻電場而產生電漿。The electrode plate 40 is a conductive plate having a substantially circular plate shape, and constitutes an upper electrode. The high-frequency power supply 35 is electrically connected to the electrode plate 40 through the matching device 36. The high-frequency power source 35 is a power source for generating plasma, and applies a high-frequency power of a specific high frequency (for example, 60 MHz) to the electrode plate 40. When high-frequency power is applied to the base 14 and the electrode plate 40 by the high-frequency power supply 32 and the high-frequency power supply 35, respectively, a high-frequency electric field is formed in the space between the base 14 and the electrode plate 40, that is, in the processing space S. Generate plasma.
於電極板40形成有複數個氣體通氣孔40h。電極板40藉由電極支持體42可裝卸地支持。於電極支持體42之內部設置有緩衝室42a。電漿處理裝置10進而具備氣體供給部44,氣體供給部44經由氣體供給導管46與緩衝室42a之氣體導入口25連接。氣體供給部44將處理氣體供給至處理空間S。該處理氣體可為例如蝕刻用之處理氣體,或亦可成膜用之處理氣體。於電極支持體42,形成有分別與複數個氣體通氣孔40h連續之複數個孔,該複數個孔與緩衝室42a連通。自氣體供給部44供給之氣體經由緩衝室42a、氣體通氣孔40h供給至處理空間S。A plurality of gas vent holes 40 h are formed in the electrode plate 40. The electrode plate 40 is detachably supported by an electrode support 42. A buffer chamber 42 a is provided inside the electrode support 42. The plasma processing apparatus 10 further includes a gas supply unit 44, and the gas supply unit 44 is connected to the gas introduction port 25 of the buffer chamber 42 a via a gas supply pipe 46. The gas supply unit 44 supplies a processing gas to the processing space S. The processing gas may be, for example, a processing gas for etching, or a processing gas for film formation. A plurality of holes are formed in the electrode support 42 continuously with the plurality of gas vent holes 40h, and the plurality of holes communicate with the buffer chamber 42a. The gas supplied from the gas supply unit 44 is supplied to the processing space S through the buffer chamber 42a and the gas vent hole 40h.
於本實施形態中,於處理容器12之頂壁,設置有以環狀或同心狀延伸之磁場形成機構48。該磁場形成機構48以使處理空間S中之高頻放電容易開始(電漿點火)而穩定地維持放電之方式發揮功能。In this embodiment, a magnetic field forming mechanism 48 extending in a ring shape or a concentric shape is provided on the top wall of the processing container 12. This magnetic field forming mechanism 48 functions so that a high-frequency discharge in the processing space S can be easily started (plasma ignition) and the discharge can be stably maintained.
於本實施形態中,電漿處理裝置10進而具備氣體供給管線58及導熱氣體供給部62。導熱氣體供給部62與氣體供給管線58連接。該氣體供給管線58延伸至靜電吸盤50之上表面為止,且於該上表面以環狀延伸。導熱氣體供給部62將例如He氣體般之導熱氣體供給至靜電吸盤50之上表面與晶圓W之間。In this embodiment, the plasma processing apparatus 10 further includes a gas supply line 58 and a heat-conducting gas supply unit 62. The heat-conducting gas supply portion 62 is connected to a gas supply line 58. The gas supply line 58 extends to the upper surface of the electrostatic chuck 50 and extends in a ring shape on the upper surface. The heat-conducting gas supply unit 62 supplies a heat-conducting gas such as He gas between the upper surface of the electrostatic chuck 50 and the wafer W.
上述構成之電漿處理裝置10藉由控制部90總括地控制其動作。於該控制部90,設置有具備CPU(Central Processing Unit,中央處理單元)且控制電漿處理裝置10之各部之製程控制器91、使用者介面92、及記憶部93。The plasma processing apparatus 10 configured as described above is controlled by the control unit 90 as a whole. The control unit 90 is provided with a process controller 91, a user interface 92, and a memory unit 93 including a CPU (Central Processing Unit) and controlling each unit of the plasma processing apparatus 10.
使用者介面92包含工程管理者為了管理電漿處理裝置10而進行指令之輸入操作之鍵盤,及可視化顯示電漿處理裝置10之運轉狀況之顯示器等。The user interface 92 includes a keyboard for a project manager to perform input operations for managing the plasma processing apparatus 10, and a display for visually displaying the operation status of the plasma processing apparatus 10.
於記憶部93儲存有配方,該配方記憶有用於在製程控制器91之控制下實現由電漿處理裝置10執行之各種處理之控制程式(軟件)或處理條件資料等。而且,根據需要,藉由來自使用者介面92之指示等自記憶部93調出任意配方並使製程控制器91執行,藉此於製程控制器91之控制下於電漿處理裝置10進行所需處理。又,控制程式或處理條件資料等配方亦可利用儲存於可由電腦讀取之電腦記憶媒體(例如,硬碟、CD(Compact Disc,緊密光碟)、軟碟、半導體記憶體等)等之狀態者。又,控制程式或處理條件資料等配方亦可自其他裝置經由例如專用線路隨時傳送而於線上使用。A recipe is stored in the memory section 93. The recipe memorizes a control program (software) or processing condition data for realizing various processes performed by the plasma processing apparatus 10 under the control of the process controller 91. Moreover, as needed, an arbitrary recipe is called up from the memory section 93 by instructions from the user interface 92 and the process controller 91 is executed, thereby performing the required operation in the plasma processing apparatus 10 under the control of the process controller 91. deal with. In addition, recipes such as control programs or process condition data can also be used in a computer-readable storage medium (for example, hard disk, CD (Compact Disc), floppy disk, semiconductor memory, etc.). . In addition, recipes such as control programs or process condition data can also be transmitted online from other devices at any time via, for example, a dedicated line.
[載置台13之構成]
其次,參照圖2對第1實施形態之載置台13之要部構成進行說明。圖2係表示第1實施形態之載置台13之要部構成的概略剖視圖。載置台13如上所述,包含基台14及靜電吸盤50,且以銷72可自基台14之下方朝靜電吸盤50之上方插通之方式構成。載置台13係插入構件之一例。[Configuration of Mounting Table 13]
Next, the configuration of the main part of the mounting table 13 according to the first embodiment will be described with reference to FIG. 2. FIG. 2 is a schematic cross-sectional view showing a configuration of a main part of a mounting table 13 according to the first embodiment. As described above, the mounting table 13 includes the base table 14 and the electrostatic chuck 50, and is configured so that the pin 72 can be inserted through from below the base table 14 to above the electrostatic chuck 50. The mounting table 13 is an example of an insertion member.
靜電吸盤50形成為圓板狀,支持於基台14。靜電吸盤50之上表面形成載置晶圓W之載置面54d。基台14係其上表面與靜電吸盤50之下表面接合。基台14之下表面形成與載置面54d相對之背面14a。The electrostatic chuck 50 is formed in a circular plate shape and is supported by the base 14. The upper surface of the electrostatic chuck 50 forms a mounting surface 54d on which the wafer W is mounted. The upper surface of the base 14 is bonded to the lower surface of the electrostatic chuck 50. A lower surface of the base 14 forms a rear surface 14 a opposite to the mounting surface 54 d.
於載置面54d形成有供銷72插入之銷用插入孔70。銷用插入孔70貫通載置面54d及與載置面54d相對之背面14a。銷用插入孔70藉由第1貫通孔76及第2貫通孔78形成。第1貫通孔76形成於靜電吸盤50,第2貫通孔78形成於基台14。於銷用插入孔70之與銷72對向之壁面形成有凹部82。A pin insertion hole 70 through which the pin 72 is inserted is formed in the mounting surface 54d. The pin insertion hole 70 penetrates the mounting surface 54d and the back surface 14a opposite to the mounting surface 54d. The pin insertion hole 70 is formed by a first through hole 76 and a second through hole 78. A first through-hole 76 is formed in the electrostatic chuck 50, and a second through-hole 78 is formed in the base 14. A recessed portion 82 is formed on a wall surface of the pin insertion hole 70 facing the pin 72.
銷72連接於圖1所示之驅動機構74,藉由驅動機構74之驅動而於銷用插入孔70內沿上下方向移動,自載置台13之載置面54d出沒自如地動作。即,於銷72上升之狀態下,銷72之前端部自載置台13之載置面54d突出,支持晶圓W。另一方面,於銷72下降之狀態下,銷72之前端部收容於銷用插入孔70內,晶圓W載置於載置面54d。The pin 72 is connected to the driving mechanism 74 shown in FIG. 1, and is moved in the pin insertion hole 70 in the vertical direction by the driving of the driving mechanism 74. The pin 72 can move freely from the mounting surface 54 d of the mounting table 13. That is, in a state where the pin 72 is raised, the front end of the pin 72 protrudes from the mounting surface 54d of the mounting table 13 and supports the wafer W. On the other hand, in a state where the pin 72 is lowered, the front end portion of the pin 72 is accommodated in the pin insertion hole 70, and the wafer W is placed on the mounting surface 54 d.
於銷用插入孔70之凹部82設置有可動構件84。可動構件84具有供銷72插入之開口部,且沿著凹部82之與銷72之軸方向交叉之上表面82a可移動地設置於凹部82。A movable member 84 is provided in the recessed portion 82 of the pin insertion hole 70. The movable member 84 has an opening portion into which the pin 72 is inserted, and is movably provided in the recessed portion 82 along the upper surface 82 a of the recessed portion 82 that intersects the axial direction of the pin 72.
於可動構件84與銷72之間配置有第1密封構件86。於銷用插入孔70中,藉由第1密封構件86密封由可動構件84及於銷用插入孔70內沿上下方向移動之銷72所形成之間隙。第1密封構件86係例如OmniSeal(註冊商標)或O形環。A first sealing member 86 is disposed between the movable member 84 and the pin 72. In the pin insertion hole 70, a gap formed by the movable member 84 and the pin 72 that moves in the vertical direction in the pin insertion hole 70 is sealed by a first sealing member 86. The first sealing member 86 is, for example, an OmniSeal (registered trademark) or an O-ring.
於可動構件84與凹部82之上表面82a之間配置有第2密封構件88。於銷用插入孔70中,藉由第2密封構件88密封由可動構件84及凹部82之上表面82a所形成之間隙。第2密封構件88係例如OmniSeal(註冊商標)或O形環。A second sealing member 88 is disposed between the movable member 84 and the upper surface 82 a of the recessed portion 82. A gap formed by the movable member 84 and the upper surface 82 a of the recessed portion 82 is sealed in the pin insertion hole 70 by a second sealing member 88. The second sealing member 88 is, for example, an OmniSeal (registered trademark) or an O-ring.
載置台13之上表面形成為載置晶圓W之載置面54d,載置台13之下表面形成為作為與載置面54d相對之背面14a。載置台13之載置面54d配置於保持為真空環境之真空空間即處理空間S側。另一方面,載置台13之背面14a配置於保持為大氣環境之非真空空間側。非真空空間係例如由筒狀保持部16之內側面包圍之空間R。處理空間S與空間R藉由銷用插入孔70連通。電漿處理裝置10藉由第1密封構件86及第2密封構件88密封銷用插入孔70,藉此,抑制空間R側之大氣流入至處理空間S(即處理容器12內之真空空間)。The upper surface of the mounting table 13 is formed as a mounting surface 54d on which the wafer W is placed, and the lower surface of the mounting table 13 is formed as a back surface 14a opposite to the mounting surface 54d. The mounting surface 54d of the mounting table 13 is disposed on the processing space S side, which is a vacuum space maintained in a vacuum environment. On the other hand, the back surface 14 a of the mounting table 13 is disposed on the non-vacuum space side that is maintained in an atmospheric environment. The non-vacuum space is, for example, a space R surrounded by the inner side surface of the cylindrical holding portion 16. The processing space S and the space R communicate with each other through a pin insertion hole 70. The plasma processing apparatus 10 seals the pin insertion hole 70 by the first sealing member 86 and the second sealing member 88, thereby suppressing the inflow of air from the space R side into the processing space S (that is, the vacuum space in the processing container 12).
此外,於電漿處理裝置10中,於根據各種電漿處理而控制載置台13之溫度之情形時,載置台13根據溫度變化而膨脹或縮小。因載置台13膨脹或收縮而導致載置台13之銷用插入孔70之軸與銷72之軸偏移,故自銷72向第1密封構件86作用局部性地壓縮第1密封構件86之按壓力。若局部性地壓縮第1密封構件86,則有於第1密封構件86之未壓縮之部分與銷72之間產生間隙之可能性,其結果,難以充分地密封銷用插入孔70。In addition, in the plasma processing apparatus 10, when the temperature of the mounting table 13 is controlled according to various types of plasma processing, the mounting table 13 expands or shrinks according to a change in temperature. Due to the expansion or contraction of the mounting table 13, the axis of the pin insertion hole 70 of the mounting table 13 and the axis of the pin 72 are offset, so the pin 72 acts on the first sealing member 86 to locally compress the pressing force of the first sealing member 86. pressure. If the first sealing member 86 is locally compressed, a gap may be generated between the uncompressed portion of the first sealing member 86 and the pin 72, and as a result, it is difficult to sufficiently seal the pin insertion hole 70.
圖3係用於說明載置台13之銷用插入孔70之軸與銷72之軸之偏移的圖。載置台13具有載置面54d及與載置面54d相對之背面14a。又,於載置台13形成有貫通載置面54d及與載置面54d相對之背面14a之銷用插入孔70。載置台13之溫度藉由靜電吸盤50之加熱器54c及基台14之冷媒流路(未圖示)所控制。於電漿處理裝置10中,於控制載置台13之溫度之情形時,載置台13根據溫度變化而膨脹或收縮。於本實施形態中,設為載置台13根據溫度變化而膨脹。例如,於電漿處理裝置10中,載置台13根據溫度變化而於載置台13之徑向上膨脹。於圖3中,載置台13之膨脹方向以白色之箭頭表示。因載置台13於載置台13之徑向上膨脹,故載置台13之銷用插入孔70之軸70a相對於銷72之軸72a於載置台13之徑向上偏移。因此,藉由載置台13、第2密封構件88及可動構件84而將第1密封構件86向銷72壓抵。藉此,作為將第1密封構件86向銷72壓抵之力之反作用力,自銷72向第1密封構件86作用局部性地壓縮第1密封構件86之按壓力。於圖3中,局部性地壓縮第1密封構件86之按壓力向與載置台13之膨脹方向(即白色之箭頭所示之方向)相反之方向作用,藉由銷72局部性地壓縮第1密封構件86之右側部分。當局部性地壓縮第1密封構件86之右側部分時,有於第1密封構件86之未壓縮之左側部分與銷72之間產生間隙,大氣自該間隙流入之可能性。FIG. 3 is a diagram for explaining the offset between the axis of the pin insertion hole 70 and the axis of the pin 72 of the mounting table 13. The mounting table 13 includes a mounting surface 54d and a back surface 14a opposite to the mounting surface 54d. In addition, a pin insertion hole 70 is formed in the mounting table 13 so as to penetrate the mounting surface 54d and the back surface 14a opposite to the mounting surface 54d. The temperature of the mounting table 13 is controlled by the heater 54c of the electrostatic chuck 50 and the refrigerant flow path (not shown) of the base table 14. In the plasma processing apparatus 10, when the temperature of the mounting table 13 is controlled, the mounting table 13 expands or contracts according to a temperature change. In this embodiment, it is assumed that the mounting table 13 expands in accordance with a temperature change. For example, in the plasma processing apparatus 10, the mounting table 13 expands in the radial direction of the mounting table 13 according to a temperature change. In FIG. 3, the expansion direction of the mounting table 13 is indicated by a white arrow. Since the mounting table 13 expands in the radial direction of the mounting table 13, the axis 70 a of the pin insertion hole 70 of the mounting table 13 is offset from the axis 72 a of the pin 72 in the radial direction of the mounting table 13. Therefore, the first sealing member 86 is pressed against the pin 72 by the mounting table 13, the second sealing member 88, and the movable member 84. Thereby, as a reaction force of a force pressing the first sealing member 86 against the pin 72, the pin 72 acts on the first sealing member 86 to locally compress the pressing force of the first sealing member 86. In FIG. 3, the pressing force for locally compressing the first sealing member 86 acts in a direction opposite to the expansion direction of the mounting table 13 (that is, the direction indicated by the white arrow), and the first compression is locally compressed by the pin 72. The right side portion of the sealing member 86. When the right side portion of the first sealing member 86 is locally compressed, a gap may be generated between the uncompressed left side portion of the first sealing member 86 and the pin 72, and the atmosphere may flow in through the gap.
因此,於電漿處理裝置10中,於自銷72向第1密封構件86作用局部性地壓縮第1密封構件86之按壓力之情形時,第2密封構件88向釋放該按壓力之方向容許可動構件84之移動。例如,如圖3所示,假定局部性地壓縮第1密封構件86之按壓力向與載置台13之膨脹方向(即白色之箭頭所示之方向)相反之方向作用之情形。於此情形時,第2密封構件88沿著凹部82之上表面82a,向與載置台13之膨脹方向相反之方向滑動,藉此容許可動構件84之移動。Therefore, in the plasma processing apparatus 10, when the pressing force of the first sealing member 86 is locally compressed by the pin 72 acting on the first sealing member 86, the second sealing member 88 is allowed to release the pressing force. Movement of the movable member 84. For example, as shown in FIG. 3, it is assumed that the pressing force that locally compresses the first sealing member 86 acts in a direction opposite to the expansion direction of the mounting table 13 (that is, the direction indicated by the white arrow). In this case, the second sealing member 88 slides along the upper surface 82 a of the recessed portion 82 in a direction opposite to the expansion direction of the mounting table 13, thereby allowing movement of the movable member 84.
藉此,因釋放局部性地壓縮第1密封構件86之按壓力,故可防止於第1密封構件86之未壓縮之左側部分與銷72之間產生間隙。其結果,電漿處理裝置10即便於載置台13之銷用插入孔70之軸與銷72之軸偏移之情形時,亦可藉由第1密封構件86及第2密封構件88適當地密封銷用插入孔70。Thereby, since the pressing force that locally compresses the first sealing member 86 is released, a gap can be prevented from being generated between the uncompressed left side portion of the first sealing member 86 and the pin 72. As a result, even when the axis of the pin insertion hole 70 of the mounting table 13 and the axis of the pin 72 are offset, the plasma processing apparatus 10 can be properly sealed by the first sealing member 86 and the second sealing member 88. The pin insertion hole 70.
以上,第1實施形態之電漿處理裝置10具有載置台13、銷72、可動構件84、第1密封構件86、及第2密封構件88。載置台13具有配置於真空空間側之載置面54d及配置於非真空空間側之背面14a,且形成有貫通載置面54d及背面14a之銷用插入孔70。銷72插入於銷用插入孔70,且於上下方向上移動。可動構件84供銷72插入,且於形成於銷用插入孔70之與銷72對向之壁面之凹部82,沿著凹部82之與銷72之軸方向交叉之上表面82a可移動地設置。第1密封構件86配置於可動構件84與銷72之間。第2密封構件88配置於可動構件84與凹部82之上表面82a之間,於自銷72向第1密封構件86作用局部性地壓縮第1密封構件86之按壓力之情形時,向釋放該按壓力之方向容許可動構件84之移動。藉此,電漿處理裝置10即便於伴隨著載置台13之膨脹或收縮而載置台13之銷用插入孔70之軸與銷72之軸偏移之情形時,亦可藉由第1密封構件86及第2密封構件88適當地密封銷用插入孔70。As described above, the plasma processing apparatus 10 according to the first embodiment includes the mounting table 13, the pin 72, the movable member 84, the first sealing member 86, and the second sealing member 88. The mounting table 13 has a mounting surface 54d arranged on the vacuum space side and a back surface 14a arranged on the non-vacuum space side, and a pin insertion hole 70 penetrating the mounting surface 54d and the back surface 14a is formed. The pin 72 is inserted into the pin insertion hole 70 and moves in the vertical direction. The movable member 84 is inserted into the pin 72 and is movably provided in the recessed portion 82 formed in the wall surface of the pin insertion hole 70 facing the pin 72 along the upper surface 82 a of the recessed portion 82 that intersects with the axis direction of the pin 72. The first sealing member 86 is disposed between the movable member 84 and the pin 72. The second seal member 88 is disposed between the movable member 84 and the upper surface 82a of the recessed portion 82. When the pressing force of the first seal member 86 is locally compressed by the pin 72 acting on the first seal member 86, the second seal member 88 is released. The pressing member allows the movable member 84 to move. This allows the plasma processing apparatus 10 to use the first sealing member even when the axis of the pin insertion hole 70 of the mounting table 13 and the axis of the pin 72 are offset as the mounting table 13 expands or contracts. 86 and the second sealing member 88 appropriately seal the pin insertion hole 70.
以下,對用於驗證第1實施形態之電漿處理裝置10之效果而進行之評估實驗進行說明。An evaluation experiment performed to verify the effect of the plasma processing apparatus 10 according to the first embodiment will be described below.
[評估裝置]
首先,對評估實驗中所使用之評估裝置500進行說明。圖6係說明評估裝置500之構成例的圖。圖6所示之評估裝置500具有實驗用容器121。實驗用容器121形成為大致圓筒形狀,於底部具有開口。於實驗用容器121之開口安裝有樣品510。藉由於實驗用容器121之開口安裝樣品510,而於實驗用容器121之內部形成空間Q。[Evaluation device]
First, the evaluation device 500 used in the evaluation experiment will be described. FIG. 6 is a diagram illustrating a configuration example of the evaluation device 500. The evaluation device 500 shown in FIG. 6 includes an experiment container 121. The experiment container 121 is formed in a substantially cylindrical shape and has an opening at the bottom. A sample 510 is mounted on the opening of the experimental container 121. Since the sample 510 is installed in the opening of the experimental container 121, a space Q is formed inside the experimental container 121.
樣品510具有底板141、銷72、可動構件84、第1密封構件86、及第2密封構件88。底板141、銷72、可動構件84、第1密封構件86及第2密封構件88分別與圖2所示之載置台13、銷72、可動構件84、第1密封構件86及第2密封構件88對應。The sample 510 includes a bottom plate 141, a pin 72, a movable member 84, a first sealing member 86, and a second sealing member 88. The bottom plate 141, the pin 72, the movable member 84, the first sealing member 86, and the second sealing member 88 are respectively different from the mounting table 13, the pin 72, the movable member 84, the first sealing member 86, and the second sealing member 88 shown in FIG. 2. correspond.
又,於實驗用容器121之側壁形成有排氣口121a,真空泵123經由排氣管122與排氣口121a連接。於排氣管122設置有開關閥122a。真空泵123以可將實驗用容器121內減壓至特定之真空度為止之方式構成。實驗用容器121之真空度(壓力)藉由壓力計121b測量。An exhaust port 121 a is formed on a side wall of the experimental container 121, and a vacuum pump 123 is connected to the exhaust port 121 a via an exhaust pipe 122. An on-off valve 122 a is provided in the exhaust pipe 122. The vacuum pump 123 is configured to reduce the pressure in the experimental container 121 to a specific vacuum degree. The degree of vacuum (pressure) of the experimental container 121 was measured by a pressure gauge 121b.
[評估實驗]
於評估實驗中,將樣品510安裝於評估裝置500,藉由依序進行如下所示之步驟(1)~(6),測定自底板141之銷用插入孔70向空間Q流入之空氣之量(以下稱為「洩漏量」)。樣品510相當於第1實施形態之電漿處理裝置10。[Evaluation experiment]
In the evaluation experiment, the sample 510 was mounted on the evaluation device 500, and the steps (1) to (6) shown below were sequentially performed to measure the amount of air flowing into the space Q from the pin insertion hole 70 of the base plate 141 Hereafter referred to as "leakage amount"). Sample 510 corresponds to the plasma processing apparatus 10 of the first embodiment.
步驟(1):藉由真空泵123,將實驗用容器121之真空度減壓至2.5 Pa左右為止。
步驟(2):使銷72之軸72a相對於底板141之銷用插入孔70之軸70a於底板141之徑向上偏移。
步驟(3):關閉開關閥122a。
步驟(4):藉由驅動機構74,使銷72於上下方向於5 mm之範圍10分鐘往返100次。
步驟(5):於執行步驟(4)10分鐘後,藉由壓力計121b測量實驗用容器121之真空度(壓力)。
步驟(6):將執行步驟(4)之10分鐘(=600秒)間的實驗用容器121之真空度(壓力)之上升量乘以實驗用容器121之容積,算出洩漏量(Pa・m3
/sec)。Step (1): The vacuum degree of the experimental container 121 is reduced to about 2.5 Pa by the vacuum pump 123.
Step (2): Offset the axis 72a of the pin 72 with respect to the axis 70a of the pin insertion hole 70 of the bottom plate 141 in the radial direction of the bottom plate 141.
Step (3): Close the on-off valve 122a.
Step (4): The driving mechanism 74 causes the pin 72 to reciprocate 100 times in a range of 5 mm in the vertical direction for 10 minutes.
Step (5): After performing step (4) for 10 minutes, the vacuum degree (pressure) of the experimental container 121 is measured by the pressure gauge 121b.
Step (6): Multiply the amount of increase in vacuum (pressure) of the experimental container 121 during 10 minutes (= 600 seconds) of step (4) by the volume of the experimental container 121 to calculate the leakage amount (Pa · m 3 / sec).
[比較實驗]
又,於比較實驗中,將比較樣品安裝於評估裝置500,藉由依序進行上述步驟(1)~(6)而測定出洩漏量。比較樣品相當於具有先前技術中之載置台130(參照圖8)之電漿處理裝置,代替可動構件84、第1密封構件86及第2密封構件88,而於銷72之周圍具有單一之密封構件286之點與樣品510不同。[Comparative experiment]
In the comparison experiment, a comparative sample was mounted on the evaluation device 500, and the steps (1) to (6) were sequentially performed to measure the amount of leakage. The comparative sample corresponds to a plasma processing apparatus having a mounting table 130 (see FIG. 8) in the prior art, and instead of the movable member 84, the first sealing member 86, and the second sealing member 88, a single seal is provided around the pin 72. The point of the member 286 is different from that of the sample 510.
圖7係表示銷72之軸72a之偏移量與洩漏量之關係之一例的圖。圖7係改變銷72之軸72a之偏移量來測定洩漏量之結果。於圖7中,「比較例」係與比較實驗對應之洩漏量,「實施例」係與評估實驗對應之洩漏量。FIG. 7 is a diagram showing an example of the relationship between the amount of displacement of the shaft 72a of the pin 72 and the amount of leakage. FIG. 7 is a result of measuring the amount of leakage by changing the offset amount of the shaft 72a of the pin 72. In FIG. 7, the “comparative example” is a leakage amount corresponding to a comparative experiment, and the “example” is a leakage amount corresponding to an evaluation experiment.
如圖7所示,於比較實驗中,於銷72之軸72a之偏移量為0.1 mm之情形時,洩漏量超過預先規定之容許規格之範圍。與此相對,於評估實驗中,即便於銷72之軸72a之偏移量為0.9 mm之情形時,洩漏量亦落在預先規定之容許規格之範圍內。即,可確認即便於載置台13之銷用插入孔70之軸70a與銷72之軸72a偏移之情形時,亦可藉由第1密封構件86及第2密封構件88適當地密封銷用插入孔70。As shown in FIG. 7, in a comparative experiment, when the offset amount of the shaft 72 a of the pin 72 is 0.1 mm, the leakage amount exceeds the range of a predetermined allowable specification. In contrast, in the evaluation experiment, even when the offset amount of the shaft 72a of the pin 72 is 0.9 mm, the leakage amount falls within a predetermined allowable specification range. That is, it can be confirmed that even when the shaft 70a of the pin insertion hole 70 of the mounting table 13 and the shaft 72a of the pin 72 are offset, the pin seal can be properly sealed by the first seal member 86 and the second seal member 88. Insert hole 70.
(第2實施形態)
其次,對第2實施形態進行說明。第2實施形態之電漿處理裝置10除載置台13之構成以外,具有與上述第1實施形態之電漿處理裝置10同樣之構成。因此,於第2實施形態中,對與上述第1實施形態共通之構成元件使用同一參照符號,並省略其詳細說明。(Second Embodiment)
Next, a second embodiment will be described. The plasma processing apparatus 10 according to the second embodiment has the same configuration as that of the plasma processing apparatus 10 according to the first embodiment except for the configuration of the mounting table 13. Therefore, in the second embodiment, the same reference numerals are used for constituent elements that are common to the above-mentioned first embodiment, and detailed descriptions thereof are omitted.
[載置台13之構成]
參照圖4、圖5,對第2實施形態之載置台13之要部構成進行說明。圖4係表示第2實施形態之載置台13之要部構成的立體圖。如圖4所示,載置台13具有第1載置台102、及設置於第1載置台102之外周之第2載置台107。第1載置台102與第2載置台107以相互成為同軸之方式配置。[Configuration of Mounting Table 13]
Referring to Fig. 4 and Fig. 5, the configuration of the main part of the mounting table 13 according to the second embodiment will be described. FIG. 4 is a perspective view showing a configuration of a main part of the mounting table 13 according to the second embodiment. As shown in FIG. 4, the mounting table 13 includes a first mounting table 102 and a second mounting table 107 provided on the outer periphery of the first mounting table 102. The first mounting table 102 and the second mounting table 107 are arranged so as to be coaxial with each other.
第1載置台102包含基台103。基台103形成為圓柱狀,於軸方向之一表面103a配置有上述之靜電吸盤50。又,基台103設置有沿著外周向外側突出之凸緣部200。本實施形態之基台103形成有於自外周之側面之中央部向下側使外徑增大而向外側伸出之伸出部201,於側面之伸出部之更下部設置有向外側突出之凸緣部200。凸緣部200於上表面之圓周方向之3個以上之位置形成有於軸方向上貫通之貫通孔210。本實施形態之凸緣部200於圓周方向上以均等之間距形成有3個貫通孔210。貫通孔210具有作為供後述之銷220插入之銷用插入孔之功能。第1載置台102係插入構件之一例。The first mounting table 102 includes a base table 103. The base 103 is formed in a cylindrical shape, and the above-mentioned electrostatic chuck 50 is arranged on one surface 103 a in the axial direction. The base 103 is provided with a flange portion 200 that protrudes outward along the outer periphery. The abutment 103 of the present embodiment is formed with a protruding portion 201 that extends outward from the central portion of the lateral side surface to the lower side and projects outward, and a lower portion of the protruding portion of the lateral surface is provided with a projecting outward. The flange portion 200. The flange portion 200 is formed with through holes 210 penetrating in the axial direction at three or more positions in the circumferential direction of the upper surface. In the flange portion 200 of the present embodiment, three through holes 210 are formed at regular intervals in the circumferential direction. The through hole 210 functions as a pin insertion hole into which a pin 220 to be described later is inserted. The first mounting table 102 is an example of an insertion member.
第2載置台107包含基台108。基台108以內徑較基台103之表面103a之外徑大特定尺寸之圓筒狀形成,於軸方向之一表面108a,配置有上述之聚焦環18。又,基台108於下表面以與凸緣部200之貫通孔210同樣之間距設置有銷220。本實施形態之基台108於下表面於圓周方向以均等之間距固定有3個銷220。基台108係共通構件之一例。The second mounting table 107 includes a base 108. The abutment 108 is formed in a cylindrical shape having an inner diameter larger than the outer diameter of the surface 103a of the abutment 103 by a specific size, and the above-mentioned focus ring 18 is arranged on one surface 108a in the axial direction. The base 108 is provided with pins 220 on the lower surface at the same distance as the through holes 210 of the flange portion 200. In the base 108 of the present embodiment, three pins 220 are fixed on the lower surface in the circumferential direction at regular intervals. The abutment 108 is an example of a common member.
基台108與基台103同軸,以銷220插入於貫通孔210之方式將圓周方向之位置對準而配置於基台103之凸緣部200上。The base table 108 is coaxial with the base table 103, and is arranged on the flange portion 200 of the base table 103 so that the pins 220 are inserted into the through holes 210 so as to be aligned in the circumferential direction.
圖5係表示第2實施形態之第1載置台102及第2載置台107之要部構成的概略剖視圖。圖5之例係表示於貫通孔210之位置處之第1載置台102及第2載置台107之剖面之圖。FIG. 5 is a schematic cross-sectional view showing the configuration of the main parts of the first mounting table 102 and the second mounting table 107 in the second embodiment. The example of FIG. 5 is a cross-sectional view showing the first mounting table 102 and the second mounting table 107 at the positions of the through holes 210.
基台103由絕緣體之支持台104所支持。於基台103及支持台104形成有貫通孔210。The abutment 103 is supported by a support 104 of an insulator. A through hole 210 is formed in the base 103 and the support 104.
貫通孔210係相較於上部而於自中央附近向下部將直徑形成得較小而形成有階211。銷220對應於貫通孔210,相較於上部而於自中央附近向下部將直徑形成得較小。The through hole 210 is formed with a step 211 having a smaller diameter from the center to the lower portion than the upper portion. The pin 220 corresponds to the through hole 210 and has a smaller diameter from the center to the lower portion than the upper portion.
基台108配置於基台103之凸緣部200上。基台108係將外徑較基台103大地形成,於與基台103對向之下表面之較基台103之外徑大之部分形成有向下部突出之圓環部221。於將基台108配置於基台103之凸緣部200上之情形時,圓環部221以覆蓋凸緣部200之側面之方式形成。The base 108 is disposed on the flange portion 200 of the base 103. The base 108 has a larger outer diameter than the base 103, and a ring portion 221 protruding downward is formed on a portion of the lower surface facing the base 103 that is larger than the outer diameter of the base 103. When the base 108 is arranged on the flange portion 200 of the base 103, the ring portion 221 is formed so as to cover the side surface of the flange portion 200.
銷220插入於貫通孔210。於各貫通孔210設置有使第2載置台107升降之升降機構120。例如,基台103於各貫通孔210之下部設置有使銷220升降之升降機構120。升降機構120內置有致動器,藉由致動器之驅動力使桿120a伸縮,從而使銷220升降。銷220藉由由升降機構120所致之升降而於貫通孔210內於上下方向移動。The pin 220 is inserted into the through hole 210. Each of the through holes 210 is provided with an elevating mechanism 120 for elevating the second mounting table 107. For example, the base table 103 is provided with a lifting mechanism 120 for lifting and lowering the pin 220 below the respective through holes 210. The elevating mechanism 120 has an actuator built therein, and the lever 120a is extended and contracted by the driving force of the actuator, thereby raising and lowering the pin 220. The pin 220 moves up and down in the through-hole 210 by being lifted and lowered by the lift mechanism 120.
於貫通孔210之與銷220對向之壁面形成有凹部182。於凹部182設置有可動構件184。可動構件184具有供銷220插入之開口部,且沿著凹部182之與銷220之軸方向交叉之上表面182a可移動地設置於凹部182。A recessed portion 182 is formed on a wall surface of the through hole 210 opposite to the pin 220. A movable member 184 is provided in the recessed portion 182. The movable member 184 has an opening portion into which the pin 220 is inserted, and is movably provided in the recessed portion 182 along the upper surface 182 a of the recessed portion 182 crossing the axial direction of the pin 220.
於可動構件184與銷220之間,配置有第1密封構件186。於貫通孔210中,由可動構件184及於貫通孔210內於上下方向移動之銷220所形成之間隙藉由第1密封構件186密封。第1密封構件186係例如OmniSeal(註冊商標)或O形環。A first sealing member 186 is disposed between the movable member 184 and the pin 220. In the through-hole 210, a gap formed by the movable member 184 and the pin 220 that moves in the up-down direction in the through-hole 210 is sealed by a first sealing member 186. The first sealing member 186 is, for example, an OmniSeal (registered trademark) or an O-ring.
於可動構件184與凹部182之上表面182a之間,配置有第2密封構件188。於貫通孔210中,由可動構件184及凹部182之上表面182a所形成之間隙藉由第2密封構件188密封。第2密封構件188係例如OmniSeal(註冊商標)或O形環。A second sealing member 188 is disposed between the movable member 184 and the upper surface 182 a of the recessed portion 182. A gap formed by the movable member 184 and the upper surface 182 a of the recessed portion 182 in the through hole 210 is sealed by a second sealing member 188. The second sealing member 188 is, for example, an OmniSeal (registered trademark) or an O-ring.
第1載置台102係將下側之空間保持為大氣環境。例如,支持台104於內側之下部形成有空間270,空間270保持為大氣環境。第1載置台102之上表面(例如基台103之凸緣部200之上表面)配置於保持為真空環境之真空空間即處理空間S側。另一方面,第1載置台102之下表面(例如支持台104之下表面)配置於保持為大氣環境之非真空空間即空間270側。處理空間S與空間270藉由貫通孔210連通。電漿處理裝置10藉由第1密封構件186及第2密封構件188密封貫通孔210,藉此抑制空間270側之大氣流入至處理空間S(即處理容器12內之真空空間)。The first mounting table 102 maintains the space below the atmosphere. For example, a space 270 is formed at the lower portion of the support table 104, and the space 270 is maintained as an atmospheric environment. The upper surface of the first mounting table 102 (for example, the upper surface of the flange portion 200 of the base table 103) is disposed on the processing space S side, which is a vacuum space maintained in a vacuum environment. On the other hand, the lower surface of the first mounting table 102 (for example, the lower surface of the support table 104) is disposed on the space 270 side, which is a non-vacuum space maintained as an atmospheric environment. The processing space S and the space 270 communicate with each other through the through hole 210. The plasma processing apparatus 10 seals the through-hole 210 with the first sealing member 186 and the second sealing member 188, thereby suppressing the inflow of air from the space 270 side into the processing space S (ie, the vacuum space in the processing container 12).
此外,於電漿處理裝置10中,於藉由機械加工將3個銷220固定於基台108之下表面之情形時,存在3個銷220中之任意銷220之軸相對於供任意銷220插入之貫通孔210之軸偏移之情況。於任意銷220之軸相對於供插入任意銷220之貫通孔210之軸偏移之情形時,自任意銷220向第1密封構件186作用局部性地壓縮第1密封構件186之按壓力。若局部性地壓縮第1密封構件186,則有於第1密封構件186之未壓縮之部分與任意銷220之間產生間隙之可能性,其結果,難以充分地密封貫通孔210。In addition, in the plasma processing apparatus 10, when the three pins 220 are fixed to the lower surface of the base 108 by machining, the axis of any pin 220 among the three pins 220 may be relative to the arbitrary pin 220. When the axis of the inserted through hole 210 is shifted. When the axis of the arbitrary pin 220 is offset from the axis of the through-hole 210 into which the arbitrary pin 220 is inserted, the pressing force of the first sealing member 186 is locally compressed from the arbitrary pin 220 to the first sealing member 186. When the first sealing member 186 is locally compressed, a gap may be generated between the uncompressed portion of the first sealing member 186 and any of the pins 220, and as a result, it is difficult to sufficiently seal the through hole 210.
因此,於電漿處理裝置10中,於自銷220向第1密封構件186作用局部性地壓縮第1密封構件186之按壓力之情形時,第2密封構件188向釋放該按壓力之方向容許可動構件184之移動。例如,假定局部性地壓縮第1密封構件186之按壓力向與任意銷220之軸之偏移方向相同之方向作用之情形。於此情形時,第2密封構件188沿著凹部182之上表面182a,向與任意銷220之軸之偏移方向相同之方向滑動,藉此容許可動構件184之移動。Therefore, in the plasma processing apparatus 10, when the pressing force of the first sealing member 186 is locally compressed by the pin 220 acting on the first sealing member 186, the second sealing member 188 is allowed to release the pressing force. Movement of the movable member 184. For example, suppose a case where the pressing force of the first sealing member 186 is locally compressed in the same direction as the offset direction of the axis of the arbitrary pin 220. In this case, the second sealing member 188 slides along the upper surface 182a of the recessed portion 182 in the same direction as the offset direction of the axis of the arbitrary pin 220, thereby allowing movement of the movable member 184.
藉此,因釋放局部性地壓縮第1密封構件186之按壓力,故可防止於第1密封構件186之未壓縮之部分與銷220之間產生間隙。其結果,電漿處理裝置10即便於第1載置台102之貫通孔210之軸與銷220之軸偏移之情形時,亦可藉由第1密封構件186及第2密封構件188適當地密封貫通孔210。Thereby, since the pressing force for locally compressing the first sealing member 186 is released, a gap can be prevented from occurring between the uncompressed portion of the first sealing member 186 and the pin 220. As a result, even when the axis of the through-hole 210 of the first mounting table 102 and the axis of the pin 220 are offset, the plasma processing apparatus 10 can be properly sealed by the first sealing member 186 and the second sealing member 188.通 孔 210。 The through hole 210.
10‧‧‧電漿處理裝置10‧‧‧ Plasma treatment device
12‧‧‧處理容器 12‧‧‧handling container
13‧‧‧載置台 13‧‧‧mounting table
14‧‧‧基台 14‧‧‧ abutment
14a‧‧‧背面 14a‧‧‧Back
16‧‧‧筒狀支持部 16‧‧‧ tubular support
17‧‧‧筒狀支持部 17‧‧‧ tubular support
18‧‧‧聚焦環 18‧‧‧ focus ring
20‧‧‧排氣通路 20‧‧‧Exhaust passage
22‧‧‧隔板 22‧‧‧ bulkhead
24‧‧‧排氣口 24‧‧‧ exhaust port
25‧‧‧氣體導入口 25‧‧‧Gas inlet
26‧‧‧排氣裝置 26‧‧‧Exhaust
28‧‧‧排氣管 28‧‧‧ exhaust pipe
30‧‧‧閘閥 30‧‧‧Gate Valve
32‧‧‧高頻電源 32‧‧‧High Frequency Power
34‧‧‧匹配器 34‧‧‧ Matcher
35‧‧‧高頻電源 35‧‧‧High Frequency Power
36‧‧‧匹配器 36‧‧‧ Matcher
38‧‧‧簇射頭 38‧‧‧ shower head
40‧‧‧電極板 40‧‧‧electrode plate
40a‧‧‧緩衝室 40a‧‧‧Buffer Room
40h‧‧‧氣體通氣孔 40h‧‧‧gas vent
42‧‧‧電極支持體 42‧‧‧ electrode support
42a‧‧‧緩衝室 42a‧‧‧Buffer Room
44‧‧‧氣體供給部 44‧‧‧Gas Supply Department
46‧‧‧氣體供給導管 46‧‧‧Gas supply duct
48‧‧‧磁場形成機構 48‧‧‧ Magnetic field formation mechanism
50‧‧‧靜電吸盤 50‧‧‧ electrostatic chuck
54a‧‧‧電極 54a‧‧‧electrode
54b‧‧‧絕緣體 54b‧‧‧ insulator
54c‧‧‧加熱器 54c‧‧‧heater
54d‧‧‧載置面 54d‧‧‧mounting surface
56‧‧‧直流電源 56‧‧‧DC Power
58‧‧‧氣體供給管線 58‧‧‧Gas supply line
62‧‧‧導熱氣體供給部 62‧‧‧Heat conduction gas supply department
70‧‧‧銷用插入孔 70‧‧‧pin insertion holes
70a‧‧‧軸 70a‧‧‧axis
72‧‧‧銷 72‧‧‧pin
72a‧‧‧軸 72a‧‧‧axis
74‧‧‧驅動機構 74‧‧‧Drive mechanism
76‧‧‧第1貫通孔 76‧‧‧The first through hole
78‧‧‧第2貫通孔 78‧‧‧ 2nd through hole
82‧‧‧凹部 82‧‧‧ recess
82a‧‧‧上表面 82a‧‧‧upper surface
84‧‧‧可動構件 84‧‧‧ movable member
86‧‧‧第1密封構件 86‧‧‧The first sealing member
88‧‧‧第2密封構件 88‧‧‧Second sealing member
90‧‧‧控制部 90‧‧‧Control Department
91‧‧‧製程控制器 91‧‧‧Process Controller
92‧‧‧使用者介面 92‧‧‧user interface
93‧‧‧記憶部 93‧‧‧Memory Department
102‧‧‧第1載置台 102‧‧‧The first mounting table
103‧‧‧基台 103‧‧‧ abutment
103a‧‧‧表面 103a‧‧‧ surface
104‧‧‧支持台 104‧‧‧Support Desk
107‧‧‧第2載置台 107‧‧‧ 2nd stage
108‧‧‧基台 108‧‧‧ abutment
108a‧‧‧表面 108a‧‧‧ surface
120‧‧‧升降機構 120‧‧‧Lifting mechanism
120a‧‧‧桿 120a‧‧‧
121‧‧‧實驗用容器 121‧‧‧ Experimental container
121a‧‧‧排氣口 121a‧‧‧ exhaust port
121b‧‧‧壓力計 121b‧‧‧Pressure gauge
122‧‧‧排氣管 122‧‧‧Exhaust pipe
122a‧‧‧開關閥 122a‧‧‧On-off valve
123‧‧‧真空泵 123‧‧‧Vacuum pump
130‧‧‧載置台 130‧‧‧mounting table
141‧‧‧底板 141‧‧‧ floor
170‧‧‧插入孔 170‧‧‧ insertion hole
172‧‧‧銷 172‧‧‧pin
182‧‧‧凹部 182‧‧‧concave
182a‧‧‧上表面 182a‧‧‧upper surface
184‧‧‧可動構件 184‧‧‧movable member
186‧‧‧第1密封構件 186‧‧‧The first sealing member
188‧‧‧第2密封構件 188‧‧‧Second sealing member
200‧‧‧凸緣部 200‧‧‧ flange
201‧‧‧伸出部 201‧‧‧ extension
210‧‧‧貫通孔 210‧‧‧through hole
211‧‧‧階 Tier 211‧‧‧
220‧‧‧銷 220‧‧‧pin
221‧‧‧圓環部 221‧‧‧Ring
270‧‧‧空間 270‧‧‧space
286‧‧‧密封構件 286‧‧‧sealing member
500‧‧‧評估裝置 500‧‧‧ evaluation device
510‧‧‧樣品 510‧‧‧sample
Q‧‧‧空間 Q‧‧‧ space
R‧‧‧空間 R‧‧‧ space
S‧‧‧處理空間 S‧‧‧ processing space
SW‧‧‧開關 SW‧‧‧Switch
W‧‧‧晶圓 W‧‧‧ Wafer
圖1係表示第1實施形態之電漿處理裝置之概略性構成之圖。FIG. 1 is a diagram showing a schematic configuration of a plasma processing apparatus according to a first embodiment.
圖2係表示第1實施形態之載置台之要部構成的概略剖視圖。 Fig. 2 is a schematic cross-sectional view showing a configuration of a main part of a mounting table in the first embodiment.
圖3係用於說明載置台之銷用插入孔之軸與銷之軸之偏移的圖。 FIG. 3 is a diagram for explaining the offset between the axis of a pin insertion hole for a mounting table and the axis of a pin.
圖4係表示第2實施形態之載置台之要部構成的立體圖。 Fig. 4 is a perspective view showing a configuration of a main part of a mounting table according to a second embodiment.
圖5係表示第2實施形態之第1載置台及第2載置台之要部構成的概略剖視圖。 FIG. 5 is a schematic cross-sectional view showing the configuration of the main parts of the first mounting table and the second mounting table in the second embodiment.
圖6係表示評估裝置之構成例的圖。 FIG. 6 is a diagram showing a configuration example of an evaluation device.
圖7係表示銷之軸之偏移量與洩漏量之關係之一例的圖。 FIG. 7 is a diagram showing an example of the relationship between the amount of displacement of the shaft of the pin and the amount of leakage.
圖8係表示先前技術中之載置台之要部構成的概略剖視圖。 FIG. 8 is a schematic cross-sectional view showing a configuration of a main part of a mounting table in the prior art.
Claims (4)
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JP2018-024777 | 2018-02-15 | ||
JP2018024777 | 2018-02-15 | ||
JP2018-190589 | 2018-10-09 | ||
JP2018190589A JP7122212B2 (en) | 2018-02-15 | 2018-10-09 | Plasma processing equipment |
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Publication Number | Publication Date |
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TW201936013A true TW201936013A (en) | 2019-09-01 |
TWI772608B TWI772608B (en) | 2022-08-01 |
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TW108104555A TWI772608B (en) | 2018-02-15 | 2019-02-12 | Plasma processing apparatus |
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TW (1) | TWI772608B (en) |
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JP7509586B2 (en) | 2020-06-17 | 2024-07-02 | 日本特殊陶業株式会社 | Retaining device |
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JP2003051535A (en) * | 2001-08-07 | 2003-02-21 | Canon Inc | Wafer holder, aligner and device production method |
US8440049B2 (en) * | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
JP4951536B2 (en) * | 2007-03-27 | 2012-06-13 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
WO2012032942A1 (en) * | 2010-09-09 | 2012-03-15 | 東京エレクトロン株式会社 | Microwave introduction mechanism, microwave plasma source and microwave plasma treatment device |
JP5936361B2 (en) | 2012-01-12 | 2016-06-22 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP6017328B2 (en) | 2013-01-22 | 2016-10-26 | 東京エレクトロン株式会社 | Mounting table and plasma processing apparatus |
-
2018
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JP7122212B2 (en) | 2022-08-19 |
JP2019145770A (en) | 2019-08-29 |
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