TW201934816A - Method and apparatus for pulling a single crystal, single crystal and semiconductor wafer - Google Patents

Abstract

The invention relates to a method for pulling a single crystal (150) by using an apparatus (100), which is used to pull the single crystal (150) from a melt (151) in a crucible (130) of the apparatus (100), semiconductor material (153), from which the single crystal (150) is intended to be formed, being introduced in solid form into the crucible (130) and then heated to a temperature (T1) at which the semiconductor material (153) does not yet melt, wherein a cleaning gas is passed through the apparatus (100), and a particle contamination (P) by an oxide of the semiconductor material in the flow (B, C) of the cleaning gas inside the apparatus (100) is determined repeatedly or continuously, and the semiconductor material (153) being melted, and the single crystal (150) being pulled from the melt (151) thereby formed, when the particle contamination has fallen below a predetermined value, as well as to such an apparatus (100), and such a single crystal, and a monocrystalline semiconductor wafer.

Description

Method and equipment for pulling single crystal, single crystal and semiconductor wafer

The present invention relates to a method for pulling a single crystal via the use of a device, and to such a device and such a single crystal and a single crystal semiconductor wafer for pulling a single crystal from a melt in a crucible of the device.

Single crystals of semiconductor materials such as silicon can be produced by pulling from a melt of the semiconductor material. To this end, so-called seeds are usually introduced into the melt and then pulled upwards. This technique is also called the so-called Czochralski method. The melt itself is obtained by melting a semiconductor material that is usually polycrystalline (ie, solid), which is usually introduced into the crucible as a loose bulk material.

Generally, it is desirable to keep the oxygen content of such single crystals as low as possible. In this case, impurities in the device or component can usually be kept low by using suitable materials.

However, a semiconductor material such as the above-mentioned silicon itself is usually also coated with an oxide, or the semiconductor material is oxidized in the air. In the case of silicon, silicon dioxide is formed in this case. For example, it is known from JP 2196082 A to remove such an oxide layer by heating a semiconductor material to a predetermined temperature for a predetermined time in a device. The equipment is then evacuated or an inert gas atmosphere is formed therein.

In this context, the purpose is to further reduce the proportion of oxygen in the single crystal of the semiconductor material and optimize the removal of the oxide layer.

The invention provides a method and an apparatus for pulling a single crystal, and such a single crystal, which has the features of an independent patent claim. The dependent claims and the description below refer to advantageous aspects.

The invention is based on a method for pulling a single crystal by using a device for pulling a single crystal from a melt in a crucible of the device. A semiconductor material intended to form a single crystal is introduced into a crucible in a solid form, particularly in a polycrystalline form. In particular, this can be done with loose bulk material, that is, relatively small and / or relatively large individual pieces of semiconductor material are introduced or poured into the crucible. For this reason, in addition to crucibles, such devices often have suitable pulling devices to pull single crystals from the melt, which will be explained further below, which melt is obtained from a semiconductor material. A heat shield body is also usually provided. In addition, the device can be evacuated for operation and flushed with clean gas. In order to describe the device in more detail, reference is made in this regard to the following embodiments, and in particular the description of the drawings. The semiconductor material contained in the crucible is then heated to a temperature at which the semiconductor material has not been melted. For example, in this case, a temperature of 1000 ° C to 1400 ° C, preferably 1000 ° C to 1250 ° C, such as 1200 ° C is advantageous. This can be achieved by heating the crucible by means of a suitable heating device.

As described above, an oxide layer is formed on a semiconductor material via air in the environment. In the case of silicon as a semiconductor material, this is mainly silicon dioxide. The silicon oxide is formed by heating in the above-mentioned temperature range. In particular, when suitable pressure conditions prevail in the device, the silicon oxide (in the case of silicon as a semiconductor material) also exists in gaseous form. For example, silicon oxide has a vapor pressure of about 13 mbar at a temperature of 1400 ° C. To this extent, it is also advantageous to evacuate the device at least partially. However, it is not possible to determine whether sufficient silicon oxide has been removed, or how much silicon dioxide has been removed, simply by evacuation and duration without a specific choice (during which the semiconductor material remains within the above temperature range).

In this case, it has been found that, on the one hand, too short duration results in the removal of too little silicon oxide from the device and the semiconductor material, and therefore too little oxygen. However, on the other hand, the duration should not be selected to be longer than the time required to remove the silicon dioxide from the semiconductor material, because the crucible material begins to corrode in the above temperature range, which may form particles that may subsequently enter Melt and dislocation of single crystal.

According to the present invention, a cleaning gas is caused to flow through the apparatus, and the cleaning gas is preferably argon. In this case, the cleaning gas can be particularly introduced into the device from above, that is, the upper end (and then the lifting device is also conveniently arranged at the upper end), and sent out from below the device, that is, the lower end, especially below the crucible ( For this purpose, suitable openings, in particular closable openings, can be provided separately). In this type of conventional equipment, the cleaning gas then flows in the direction of the semiconductor material contained in the crucible inside the above-mentioned thermal shield body, flows outward between the semiconductor material and the lower end of the thermal shield body, and then flows out of the crucible And flow down. In this case, turbulence can also be formed inside the crucible that extends up to the dome of the device.

In addition, when the cleaning gas is flowing through the device, the oxide of semiconductor material in the cleaning gas stream inside the device is then repeatedly or continuously (or quasi-continuously) measured (in the case of silicon as the semiconductor material, it is preferred Particle pollution caused by silicon oxide). Suitable measuring devices, in particular measuring devices with a measuring unit and a pump, can be used to determine particle contamination, which will also be explained in more detail below.

(Only) When particle contamination (ie, the degree of oxide-related particle contamination) has fallen below a predetermined value, the semiconductor material is melted, and single crystals are pulled from the melt thus formed.

In this way, the following effects can be achieved: On the one hand, the oxygen in the device or semiconductor material is reduced as much as possible, but on the other hand, no particles are formed that may subsequently cause dislocations in the single crystal.

As the predetermined value, it is particularly preferable to set a ratio relative to the maximum measurable value or the measured value of the particle contamination in the device. The ratio is preferably 20% or less, particularly preferably 15% or less, and more preferably 10%. For example, the value determined during the measurement is assumed to be the maximum measurable value or the maximum measured value. The maximum value is obtained because the measured particle count increases with increasing temperature and decreases as the conversion becomes more complete.

However, it is also conceivable that the value is measured once within the capacity of the reference value of a specific type of semiconductor material and / or a specific type of equipment. However, it is also conceivable to use absolute values.

Preferably, particle contamination in a gas or gas mixture is determined in an area where clean gas turbulence is present in the device. Here, it is assumed that particle pollution is sufficiently meaningful due to turbulence.

Particularly preferred is the measurement of particle contamination in a gas or gas mixture in the dome area of the device. In this case, the dome is intended to refer to the cupola-like portion of the device, where the diameter of the device is reduced above the crucible. On the one hand, turbulence is found in this area, but on the other hand, this area is also located in front of the lower end of the thermal shield body with respect to the flow direction of the cleaning gas. Generally, by measuring the particle contamination in the gas or gas mixture in the above-mentioned area, it is possible to obtain information about the area between the lower end of the thermal mask body and the solid semiconductor material, that is, in the gas or gas mixture in the ultimately relevant position Sufficiently accurate information about particle contamination because, as has been found, particles are distributed in the device by turbulence accordingly.

For particle contamination in a gas or a gas mixture, it is preferably measured in a region of the device located in front of the lower end of the thermal shield relative to the flow direction of the cleaning gas, which is arranged above the semiconductor material in the crucible, And the single crystal will be pulled up inside the thermal shield. At such a location, it is assumed that any other impurities, even oxides, present in the device have no further effect on the relevant particle contamination, or at least almost no effect.

However, again, it is advantageous to measure the particle contamination in the gas or gas mixture in the area behind the thermal shield body, especially at the lower end of the device, with respect to the flow direction of the cleaning gas, which is arranged in the crucible And the single crystal will be pulled up inside the thermal shield body. Even though some other impurities may appear here, it is still possible to make sufficiently accurate measurements of particle contamination by oxides. This can be done, for example, when a suitable measurement is not possible at another location in the device.

However, it is preferable to perform corresponding measurements of particle contamination by oxides at two different ones of those locations, ie, for example, at the lower end of the dome and the device. In this way, more accurate measurements can be obtained.

Advantageously, the gas or gas mixture is removed from the device to determine particle contamination, which gas or gas mixture is subsequently returned to the device in particular. This allows a particularly simple determination or measurement of particle contamination outside the device. The removed gas or gas mixture can then be released into the atmosphere, especially when it can be ensured that no toxic components are present in the gas or gas mixture. Otherwise, the gas or gas mixture can also be sent to special exhaust systems and / or filters, or it can be returned to the device.

Particularly preferably, a crucible composed at least in part of a nitride of a semiconductor material is used. Therefore, in the case of silicon as a semiconductor material, a silicon nitride is conceivable in this case, and a crucible composed entirely of silicon nitride is preferred. Compared with originally conventional materials, in this case, not only can high temperatures be achieved without material melting, but-especially compared to silicon dioxide, which is also conventionally used as a crucible material-can cause oxides Particle contamination remains low.

Although the method can then be performed for each new production process or single crystal pulling, it is also conceivable that the method can be performed for one such reduction process, and subsequent production processes no longer need to be in this form Proceeding, ie when the semiconductor material is heated again to the corresponding temperature, if the conditions have not changed or are at least equivalent. It is then no longer necessary to determine the particle contamination, but it is sufficient to wait for the elapsed time until the particle contamination drops below a predetermined value, while passing the cleaning gas through the device at a predetermined temperature. However, for example, if a different semiconductor material is used, the method can be performed again.

The invention also relates to an apparatus for pulling a single crystal from a melt, which melt may be contained in a crucible of the apparatus, the apparatus being adapted to heat a semiconductor material to a temperature at which the semiconductor material has not yet melted, the single crystal It is intended to be formed from the semiconductor material, and the semiconductor material can be introduced into the crucible in a solid form. In this case, the device is further adapted to allow the cleaning gas to pass through the device before the semiconductor material is melted and the single crystal pulling is started, and a measuring device is provided, which is suitable when the cleaning gas is flowing through the device Measure the particle pollution caused by oxides of semiconductor materials (preferably silicon oxide) in the clean gas stream inside the device.

A preferred measuring device is connected in the area of the device located before the lower end of the thermal shield, which is arranged above the semiconductor material in the crucible, and the single crystal is to be pulled up inside the thermal shield . Advantageously, the measuring device is connected in the dome area of the device. As an alternative or in addition, the measuring device is preferably connected in a region of the device behind the thermal shield body with respect to the flow direction of the cleaning gas, in particular at the lower end of the device, the thermal shield body being arranged in the crucible Above the semiconductor material, and the single crystal will be pulled up inside the thermal shield.

Preferably, the measuring device is further adapted to remove a gas or gas mixture from the device to determine particle contamination, and is particularly suitable for subsequent return thereof to the device. The measuring device preferably has a measuring unit and a pump, in particular a vacuum pump.

In this case, the connection of the measuring device can be made via a suitable line, in particular a vacuum line. For example, the measurement unit may be connected to an opening in the device by means of a pipeline, and then the pump may be connected to the measurement unit by means of another pipeline. When the removed gas or gas mixture is subsequently intended to be fed back into the device, for example to avoid any contamination of the atmosphere, the pump can then be connected to the device again in a suitable location. In this case, the return of the gas or gas mixture may preferably take place in the vicinity of the removal position, that is, especially also in the above-mentioned area. Therefore, the measuring device also does not need to be arranged on the device itself, although this is of course possible.

Particularly preferably, the crucible of the device is at least partially composed of a nitride of a semiconductor material.

The device may also include a computing unit or a control system, and then the device is preferably further configured for carrying out the method according to the invention. The device according to the invention can also be used for carrying out the method according to the invention.

Regarding the advantages and further aspects of the device, in order to avoid repetition, reference is made to the implementation aspects related to the method above, which implementation aspects apply accordingly.

The present invention also relates to a silicon single crystal and a silicon semiconductor wafer cut from such a single crystal. In the semiconductor wafer, respectively, the interstitial oxygen concentration in the single crystal is less than 0.5 × 10 ¹⁷ atoms / cm ³ , especially less than 0.3. × 10 ¹⁷ atoms / cm ³ , and the nitrogen concentration is greater than 1 × 10 ¹⁶ atoms / cm ³ . The range indications related to the interstitial oxygen concentration are range indications according to the "new ASTM", while the range indications related to the nitrogen concentration are range indications based on a combination of measurement by low temperature FTIR and sample calibration by SIMS measurement . The low interstitial oxygen concentration results from the effective reduction of oxides in the device or on the semiconductor material via the proposed method. Such single crystals or semiconductor wafers cut therefrom are particularly suitable for use in the semiconductor industry. Monocrystalline silicon semiconductor wafers have a diameter of not less than 200 mm, preferably a diameter of not less than 300 mm, and particularly preferably a diameter of 300 mm

Other advantages and aspects of the invention can be found in the description and the drawings.

It should be understood that the above features and the features to be explained below can be used not only in each of the illustrated combinations, but also in other combinations or alone without departing from the scope of the present invention.

The invention is schematically presented by means of exemplary embodiments in the drawings and will be described below with reference to the drawings.

FIG. 1 schematically shows a device 100 according to the present invention in a preferred embodiment for pulling a single crystal. With the device 100, the method according to the invention can be carried out, which will be explained in more detail below by means of the device 100 in a preferred embodiment.

For this reason, FIG. 2 schematically shows the time sequence of the method according to the present invention in a preferred embodiment. In this case, the temperature T of the crucible or semiconductor material and the particle contamination P caused by the oxides in the device are expressed as a function of time t.

Figures 1 and 2 will be described in detail below. Arranged in the apparatus 100 is a crucible 130 into which a solid semiconductor material can be introduced. In the example shown, the symbol 153 indicates a semiconductor material and is, for example, silicon, here in the form of a large number of independent polycrystalline blocks of different sizes. On the surface of the semiconductor material or a single block, there is an oxide of the semiconductor material, as indicated here by the symbol 154. In the case of silicon as a semiconductor material, this is mainly silicon dioxide, namely SiO ₂ , which is formed by reaction with oxygen in the air.

This solid semiconductor material can then be melted so that a melt is obtained in the crucible, as will be explained in more detail below. To this end, a heating device 135 is provided, which surrounds the crucible 130, and the crucible 130 can be heated with the heating device. The heating device 135 may be, for example, a resistance heater.

Above the semiconductor material 153 and the crucible 130 is installed a thermal shield body, which can be used to maintain the heat subsequently released from the melt to reduce energy consumption.

Single crystals can subsequently be formed from the melt via the use of a pull-out device 140, as will also be explained in more detail below. For a more detailed description of the pull-up crystal, refer to FIGS. 3 to 6 and related descriptions.

However, before the semiconductor material melts, it is within the scope of the present invention that it is first heated to a temperature such that it has not yet melted. For this purpose, a heating device 135 can also be used. In FIG. 2, this is indicated by the temperature T _1, T _1, for example, may be 1200 ℃. At this temperature, the above silicon dioxide reacts with silicon and forms a silicon oxide, that is, SiO. According to experience, the reaction starts above 930 ° C. Under suitable pressure conditions, silicon oxides can be initially in gaseous form in particular.

In addition, fraction A shows the ideal flow of cleaning gas (preferably argon) that can flow through the apparatus 100 from the top down, as explained in the introduction. The actual flow of the cleaning gas is not a simple laminar flow as indicated by flow component A, but also has a turbulence component represented by flow component C which is a part of flow component B. Therefore, the actual flow performance is represented by fractions B and C. In this case, the cleaning gas also flows through the semiconductor material 153 by flowing through the space between the individual blocks.

In this case, it can now be seen that, on the one hand, the cleaning gas, which can be initially introduced into the device from above via the opening shown, flows in the direction of the semiconductor material 153 contained in the crucible 130, and then the The cover 120 flows between the lower ends, and also between individual pieces of semiconductor material 153, flows out of the crucible 130, and flows out of the apparatus 100 at the bottom through the opening shown.

In addition, a turbulent flow component C is formed, which rises up in front of the semiconductor material 153, spreads out in the dome 110 of the device 100, and is then brought back down again with the component from above.

Gaseous silicon oxide is cooled in the cooler environment of the dome 110 so that it exists as solid particles in the gas or gas mixture contained in the device. In Fig. 2, the concentration of such oxides is shown in the form of particle contamination P.

A measuring device 160 is now provided, by means of which particle contamination in the device can be determined, in particular in a region between the semiconductor material 153 and the lower end of the thermal shield body 120. To this end, the measuring unit 161 and the pump 162, in particular a vacuum pump, which is part of the measuring device, are connected to the (shown) opening of the device 100 by means of a pipeline, so that by operating the pump 162, a gas or gas mixture can be sucked out of the turbulent flow C or the area of the dome 110 and passes through the measuring unit 161.

In the measuring unit 161, particle contamination caused by an oxide (here, silicon oxide) can then be determined. The removed gas or gas mixture may then be fed back into the device 100 via a suitable opening (as shown), particularly near the removal location. However, as an alternative, it is also conceivable to release the gas or gas mixture into the atmosphere as shown by means of the dashed arrows, or to deliver it to a special exhaust system.

Furthermore, a (further) measuring device 170 is shown having a measuring unit 171 and a pump 172, which measuring device 170 can be configured similarly to the measuring device 160 on the one hand and can be connected to the device 100 in the same way as the measuring device 160 . However, the measuring device 170 is connected at the lower end of the device, not at the dome. This measuring device 170 can then be used as a replacement or addition to the measuring device 160, as already explained in the foregoing.

Now, while the semiconductor material is being maintained at least approximately at a temperature T ₁ , a cleaning gas is passed through the device and, for example, particle contamination is continuously or repeatedly measured at predetermined time intervals. As can be seen in Figure 2, particle contamination increases to a maximum value P ₁ and then decreases more and more. In this case, the particle contamination need not be reduced linearly as represented here in a simple manner.

Once the particle contamination P has fallen below a predetermined value (here, P ₂ ), the temperature rises and the semiconductor material contained in the crucible is melted.

For example, in this case, the value P ₂ can be selected as P ₂ = 0.1 ∙ P ₁ , which is 10% of the highest measured value P ₁ .

In addition, the duration required to reduce particle contamination below a predetermined value is represented by Δt. This duration can be determined so that, as mentioned, if other conditions have not changed or are substantially unchanged, it is no longer necessary to measure the particle contamination of subsequent production processes, but rather to maintain the temperature while the cleaning gas is passing through the equipment T ₁ . The time to reach the temperature T ₁ is suitable as a starting temperature for determining the duration Δt.

In FIGS. 3 to 6, the device 100 according to FIG. 1 is again presented (having only one of two measuring devices), but with different phases or phases during the pulling of the single crystal. The process will be explained in more detail below with the help of these figures.

As mentioned, the initially solid semiconductor material contained in the crucible 130 may be melted to obtain a melt 151. Then, by using the pulling device 140 (which may include suitable cables, etc.), a small single crystal, a so-called seed crystal 152 may be first introduced into the melt 151 as shown in FIG. 3.

Subsequently, the seed crystal 152 may be pulled upward, specifically, preferably, so that a very thin region is formed at the lower end of the seed crystal, as shown in FIG. 4. This can be achieved by temporarily increasing the speed at which the seed crystal 152 is pulled, so that only a small diameter is achieved during the crystallization of the liquid semiconductor material from the melt 152 on the seed crystal 152.

The speed can then be reduced again to form a single crystal 150. To this end, the so-called starting cone is initially pulled up or formed, that is, the diameter of the single crystal 150 initially increases until it reaches a desired diameter of, for example, about 300 mm, as can be seen in FIG. 5. From then on, the single crystal 150 may be pulled upward at a substantially constant speed until it reaches a desired length or height. It should be understood that some modification of speed may be necessary to keep the diameter as constant as possible.

Both the crucible 130 and the single crystal 150 may be rotated in this case as well. In this case, the direction of rotation is usually reversed. This rotation is, for example, intended to obtain a substantially cylindrical shape of a single crystal.

After the single crystal 150 has reached a desired length or height, a so-called end cone may be formed or pulled out, as shown in FIG. 6. To this end, the speed can be increased again. After the diameter drops below a certain diameter, the single crystal can be removed and passed on for further processing.

100‧‧‧ Equipment

110‧‧‧ dome

120‧‧‧heat shield body

130‧‧‧ Crucible

135‧‧‧Heating equipment

140‧‧‧lifting equipment

150‧‧‧Single Crystal

151‧‧‧melt

152‧‧‧Seed

153‧‧‧Semiconductor materials

154‧‧‧oxides of semiconductor materials

160,170‧‧‧Measurement device

161,171‧‧‧Measurement unit

162,172‧‧‧Pump

A, B, C‧‧‧

T, T ₁ ‧‧‧Temperature

P‧‧‧ particle pollution

P ₁ ‧‧‧Maximum measurable value / Maximum measurable value / Maximum value

P ₂ ‧‧‧ predetermined value

∆t‧‧‧ Duration

Fig. 1 schematically shows a device according to the invention in a preferred embodiment, with which the method according to the invention can be carried out.

Fig. 2 schematically shows the sequence of the method according to the invention in a preferred embodiment.

Figures 3 to 6 schematically show the pulling of a single crystal by means of the apparatus of figure 1.

no

Claims (19)

A method for pulling a single crystal (150), comprising: providing a device (100) for pulling the single crystal (150) from a melt (151) in a crucible (130) of the device (100); A semiconductor material (153) is provided, the single crystal (150) is intended to be formed from the semiconductor material; the semiconductor material (153) in a solid form is introduced into the crucible (130), and then the semiconductor material is heated to the semiconductor material ( 153) The temperature (T ₁ ) that has not been melted; passing the cleaning gas through the device (100); repeatedly or continuously measuring the oxidation of the semiconductor material in the fraction (B, C) of the cleaning gas inside the device (100) particle contamination was caused by (P); melting of the semiconductor material (153); and when the particle contamination drops below a predetermined value (P _2), (151) single crystal pulling (150) from the melt. The method according to claim 1, comprising: using a ratio of a maximum measurable value or a maximum measured value (P ₁ ) with respect to the particle contamination (P) in the device as the predetermined value (P ₂ ), where the ratio is 20% or less. The method according to claim 1 or 2, which includes: Silicon was used as the semiconductor material (153), and particle contamination caused by the silicon oxide as the oxide was measured. The method according to claim 1 or 2, comprising: heating the semiconductor material (153) in the crucible (130) to a temperature (T ₁ ) between 930 ° C and 1400 ° C. The method according to claim 1 or 2, which includes: Determining the particle contamination (P) in the gas or gas mixture in the area where the turbulent flow component (C) of the clean gas exists in the device (100) and / or in the area of the dome (110) of the device (100) ). The method according to claim 1 or 2, comprising determining the particle contamination (P) in the gas or gas mixture in an area of the device (100), the area being located in the thermal shield body with respect to the flow direction of the clean gas Before the lower end of (120), the thermal shield body is arranged above the semiconductor material (153) in the crucible (130). The method according to claim 1 or 2, comprising determining the particle contamination (P) in the gas or gas mixture in an area of the device (100), the area being located in the thermal shield body with respect to the flow direction of the clean gas After (120), the thermal shield body is disposed above the semiconductor material (153) in the crucible (130). The method according to claim 1 or 2, which comprises removing the gas or gas mixture from the device (100) to determine the particle contamination (P), and subsequently returning the gas or gas mixture to the device (100). The method according to claim 1 or 2, which comprises determining particle contamination (P) in the at least partially evacuated equipment (100). The method according to claim 1 or 2, wherein the crucible (130) used is at least partially composed of a nitride of the semiconductor material. The method according to claim 1 or 2, comprising determining a duration (Δt) required until the particle contamination drops below the predetermined value (P ₂ ), and performing heating of the semiconductor material (153) to the temperature (T ₁ ) at least one subsequent procedure, and without measuring the particle contamination, flowing the clean gas through the device (100) for the determined duration (Δt). An apparatus (100) for pulling a single crystal (150) from a melt (151), the melt (151) may be contained in a crucible (130) of the apparatus (100), the apparatus being adapted to hold a semiconductor material (153) was heated to the semiconductor material (153) Not melting temperature (T _1), the single crystal (150) intended to (153) is formed by the semiconductor material and the semiconductor material (153) can be in solid form Introduced into the crucible (130), wherein the device (100) is further adapted to flow the cleaning gas through the device (100) before the semiconductor material (153) is melted and the pulling of the single crystal (150) is started A measuring device (160, 170) is provided, the measuring device is suitable for measuring the semiconductor material in the fraction (B, C) of the clean gas inside the device (100) when the clean gas flows through the device (100) Particle contamination (P) caused by oxides. The device (100) according to claim 12, wherein the measuring device (160, 170) is adapted to determine particle contamination (P) caused by silicon oxide. Device (100) according to claim 12 or 13, wherein the measuring device (160) is connected in the dome area of the device (100), and / or the measuring device (160) is connected to the opposite side of the device (100) The thermal shield body (120) is arranged in the crucible (130) in a region where the direction of flow of the cleaning gas is before the lower end of the thermal shield body (120) and / or after the thermal shield body (120). Above the semiconductor material (153), and the single crystal (150) is pulled up inside the thermal shield body (120). The device (100) according to claim 12 or 13, wherein the measuring device (160, 170) is further adapted to remove a gas or gas mixture from the device (100) to determine the particle contamination (P). The device (100) according to claim 12 or 13, wherein the measuring device (160, 170) comprises a measuring unit (161, 171) and a pump (162, 172). The apparatus (100) according to claim 12 or 13, wherein the crucible (130) is at least partially composed of a nitride of the semiconductor material. A silicon single crystal (150) having an interstitial oxygen concentration of less than 0.5 × 10 ¹⁷ atoms / cm ^{3 and} a nitrogen concentration of more than 1 × 10 ¹⁶ atoms / cm ³ . A single crystal silicon semiconductor wafer has a gap oxygen concentration of less than 0.5 × 10 ¹⁷ atoms / cm ^{3 and} a nitrogen concentration of more than 1 × 10 ¹⁶ atoms / cm ³ .