TW201932646A - 硬遮罩上的矽塗層 - Google Patents

硬遮罩上的矽塗層 Download PDF

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Publication number
TW201932646A
TW201932646A TW108102020A TW108102020A TW201932646A TW 201932646 A TW201932646 A TW 201932646A TW 108102020 A TW108102020 A TW 108102020A TW 108102020 A TW108102020 A TW 108102020A TW 201932646 A TW201932646 A TW 201932646A
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Taiwan
Prior art keywords
layer
thickness
silicon layer
hard mask
mask material
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TW108102020A
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English (en)
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TWI729346B (zh
Inventor
亞當 安德魯 普魯斯
二世 理查 Ａ 布萊德利
喬治Ｊ 奧肯福斯
馬庫斯 Ｋ 提爾許
安德魯 克拉克
瑪里亞斯 葛里勾尼斯
安迪 西卡布寇
尼可拉斯 亞歷山大 戴維斯
安東尼 杰 坎普 卡翠爾
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美商菲爾薇解析公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/012—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of aluminium or an aluminium alloy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
    • B32B15/015—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium the said other metal being copper or nickel or an alloy thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/00—Layered products comprising a layer of metal
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    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • B32B15/18—Layered products comprising a layer of metal comprising iron or steel
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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    • C—CHEMISTRY; METALLURGY
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    • C23C4/06—Metallic material
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    • C—CHEMISTRY; METALLURGY
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    • C—CHEMISTRY; METALLURGY
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Abstract

本申請公開了一種器件，所述器件包括硬遮罩材料；包括鋁或銅的層；和具有第一厚度的矽層。所述器件還可以包括具有第二厚度的矽層。還公開了製造所述器件的方法。

Description

硬遮罩上的矽塗層
本公開內容總體上涉及一種器件，所述器件包括硬遮罩材料；包括鋁或銅的層；和具有第一厚度的矽層。所述器件還可以包括具有第二厚度的矽層。還公開了製造所述器件的方法。所述器件可以包括較少的缺陷並且可以具有增加的耐久性。
過量的塗層材料可以附著至濺射塗覆室的壁。濺射室的壁上的塗層可以破裂、脫落，並且可以產生灰塵。濺射塗覆室的每個使用週期都增加了可以在被沉積在塗覆室中的塗層中看到的缺陷的數量和類型。增加的缺陷的數量導致降低的產率，這導致通過塗覆室的較低產量，這導致較低的容量。
相關申請案
本申請案主張2018年1月18日提出申請之美國臨時申請案第62/619,052號之優先權，其揭示以參考方式併入本文。
在一個方面中，公開了一種器件，所述器件包括硬遮罩材料；包括鋁或銅的層；和矽層。
在另一個方面中，公開了一種製造器件的方法，該方法包括提供硬遮罩材料；使用雙絲電弧噴塗程序(twin wire arc spray process)在硬遮罩材料的頂部上施加一層；以及使用等離子體噴塗程序在使用雙絲電弧噴塗程序施加的層的頂部上施加具有第一厚度的矽層。
各種實施方案的另外的特徵和優點將部分地在以下的描述中闡述，並且部分地從描述中將是明顯的或者可以通過實踐各種實施方案而得知。各種實施方案的目的和其他優點將通過在本文的描述中特別指出的要素和組合來實現和獲得。
應理解，前述的一般性描述和下面的詳細描述兩者是示例性的也僅是示例性的，並且意圖提供對本教示的各種實施方案的解釋。每個圖中所示的層/部件可以關於特定的圖被描述，但是應當理解，特定層/部件的描述將適用於其他圖中的等效層/部件。
在其廣泛和變化的實施方案中，本文公開了器件10，所述器件10包括硬遮罩材料20；包括鋁或銅的層30；和具有第一厚度的矽層40。如圖1所示，該器件可以包括硬遮罩材料20；包括鋁或銅的層30；具有第一厚度的矽層40；和具有第二厚度的矽層50。圖2A-圖4B是如圖1所示的器件的圖像。
硬遮罩材料202可以是任何合適的基底材料。在一個方面中，硬遮罩材料20可以是金屬。如本文所使用的，術語“金屬”指的是週期表的第2至13族(包括第2族和第13族)的元素，加上第14族和第15族中的選定元素。因此，術語“金屬”廣義地指的是以下元素：
第2或IIA族：鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)和鐳(Ra)。
第3-12族：過渡金屬(第IIIB族、第IVB族、第VB族、第VIB族、第VIIB族、第VIII族、第IB族和第IIB族)，包括鈧(Sc)、釔(Y)、鈦(Ti)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鉬(Mo)、鎢(W)、錳(Mn)、鍀(Tc)、錸(Re)、鐵(Fe)、釕(Ru)、鋨(Os)、鈷(Co)、銠(Rh)、銥(Ir)、鎳(Ni)、鈀(Pd)、鉑（Pt）、銅（Cu）、銀（Ag）、金（Au）、鋅（Zn）、鎘（Cd）和汞（Hg）。
第13或IIIA族：硼(B)、鋁(Al)、鎵(Ga)、銦(In)和鉈(Tl)。
鑭系元素：鑭(La)、鈰(Ce)、鐠(Pr)、釹(Nd)、鉕(Pm)、釤(Sm)、銪(Eu)、釓(Gd)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)和鎦(Lu)。
第14或IVA族：鍺(Ge)、錫(Sn)和鉛(Pb)。
第15或VA族：銻(Sn)和鉍(Bi)。
在一個方面中，硬遮罩材料20可以是鋼例如不銹鋼或鋁。硬遮罩材料20可以具有在從約1 mm至約5 mm的範圍內的厚度，例如從約2mm至約4 mm的範圍內的厚度，並且作為另外的例子，約3 mm厚。預期也可以使用在所公開的範圍內的任何厚度。
在所公開的器件10中，包括鋁或銅的層30可以施加在硬遮罩材料20的頂部上。層30可以是粗糙的金屬，例如粗糙的鋁層或粗糙的銅層。在一個方面中，此層30可以使用雙絲電弧噴塗程序施加。雙絲電弧噴塗程序可以包括各種步驟，諸如：(A)向反應室提供至少一種選自由金屬、金屬合金、金屬化合物和陶瓷組成的群組的起始材料；(B)操作包括兩根絲線和被可控地供給到腔室中的工作氣體的雙絲電弧噴嘴，以在兩根絲線的兩個會聚的前端(leading tip)之間形成電弧，以在前端加熱並熔化起始材料，用於提供沿預定的方向行進的液滴流；以及(C)操作高能量源，用於在電弧附近和在腔室內部產生蒸發區，其中液滴被蒸發以形成蒸汽物質。兩根絲線可以被連續地供給到腔室中，其中絲線的前端以高供給速率連續地熔化(並且部分地蒸發)，用於在不間斷的情況下並且以高的生產率連續地產生蒸汽材料。蒸汽材料可以撞擊並沉積到硬遮罩材料例如基底上，以形成薄膜或塗層。可以調節基底表面附近的溫度，使得蒸汽材料冷凝並形成塗層，例如鋁或銅的塗層。
工作氣體可以選自例如氫、氧、碳、氮、氯、氟、硼和硫，以分別形成金屬氫化物、氧化物、碳化物、氮化物、氯化物、氟化物、硼化物和硫化物及其組合。
起始材料可以包括呈絲線的兩種不同材料。兩種不同的材料可以以這樣的方式構成兩根絲線，該方式使得兩根絲線具有不同的材料組成。
兩根金屬絲線可以由動力輥驅動，以與兩個相應的導電套(conductive jacket)物理接觸，所述導電套通過導電塊被供應有“+”和“-”電壓或脈衝功率。電壓極性可以顛倒；即，“-”和“+”而非“+”和“-”。電壓可以來自DC或脈衝電源。兩根絲線的下端可以以約30°- 60°的角度彼此接近。可以使兩端彼此接觸持續短的時間段。由於高電流密度，這樣的“短路”接觸可以產生超高溫度，導致電離電弧的形成。穩定的電弧可以被維持，條件是電流被持續地供應，維持一定水準的氣體壓力，並且絲線以恒定或脈動速度供給。通過氣體通道從氣體源(例如壓縮空氣瓶)引入的壓縮空氣流也可以用於將液體流向下帶入到蒸發區中。
包括鋁或銅的層30可以以約0.001 mm至約5 mm的厚度，例如從約0.05 mm至約4 mm的厚度，並且作為另外的實例從約0.1 mm至約3 mm的厚度，施加在硬遮罩材料20的頂部上。在一個方面中，層20可以使用雙絲電弧噴塗程序施加以實現約0.1 mm的厚度。
在所公開的器件10中，具有第一厚度的矽層40可以施加到包括鋁或銅的層30上。矽層40可以使用等離子體噴塗程序來施加。等離子體噴塗程序可以使用DC電弧以產生高溫(1500℃)電離等離子體氣體流。材料例如矽可以在惰性氣體流中被攜帶到等離子體射流中，在等離子體射流中，材料被加熱並被推向基底，例如施加在硬遮罩材料的頂部上的鋁或銅的暴露層。等離子體噴槍可以包括銅陽極和鎢陰極，兩者都可以是水冷的。等離子體氣體，例如氬氣、氮氣、氫氣和氦氣，可以圍繞陰極流動並穿過陽極，所述陽極可以被成形為收縮噴嘴。
具有第一厚度的矽層40可以以約0.05 mm至約2mm，例如從約0.08 mm至約1.5 mm，並且作為另外的實例從約0.1 mm至約1 mm的第一厚度存在。
由於存在相對於彼此不同的材料，可能會發生應力和由此產生的缺陷。例如，包括鋁或銅的層30可以在相鄰的矽層40中產生應力和缺陷，該矽層40具有通過等離子體噴塗程序施加的第一厚度。然而，由於矽層40的第一厚度，這些缺陷可以被減少或最小化。例如，缺陷可能僅存在於從包括鋁或銅的層進入矽層40的20nm內。因此，缺陷不會一直延伸穿過矽層40。
另外，具有第一厚度的矽層40可以具有與矽層50相似的性質，所述矽層50具有第二厚度並且經由濺射沉積程序施加。
器件10還可以包括具有第二厚度的矽層50，所述矽層50已經通過濺射沉積程序被施加到具有第一厚度的矽層40上，該矽層40通過等離子體噴塗程序施加。矽層50可以以從約10 nm至約100 nm存在，例如從約30 nm至約80 nm，並且作為另外的實例從約45 nm至約60 nm的第二厚度存在。
製造器件10的方法可以包括提供硬遮罩材料20；使用雙絲電弧噴塗程序在硬遮罩材料20的頂部上施加層30；以及使用等離子體噴塗程序在使用雙絲電弧噴塗程序施加的層30的頂部上施加具有第一厚度的矽層40。
如上所討論的，硬遮罩材料20可以是任何基底材料。在一個方面中，硬遮罩材料20是鋼或鋁。硬遮罩材料20的厚度可以是約3 mm。
在一個方面中，使用雙絲電弧噴塗程序施加的層30是鋁層。在另一個方面中，使用雙絲電弧噴塗程序施加的層30是銅層。使用雙絲電弧噴塗施加的層30可以具有約1 mm的厚度。
使用等離子體噴塗程序施加的具有第一厚度的矽層40可以使得能夠沉積較厚的矽層。此矽層40可以以足夠厚的層施加，以避免和/或最小化由於不同材料的存在而發生的缺陷的風險。此外，因為此較厚的矽層40在不同的程序步驟中施加，所以使得能夠濺射沉積具有第二厚度的矽層50以使用較少的材料，即，它是較薄的層。較少材料的使用將降低矽出現在濺射塗覆室壁上、從壁上脫落以及在器件10上產生灰塵的可能性。
製造器件10的方法還包括，在使用等離子體噴塗程序施加具有第一厚度的矽層40之後，在濺射程序中施加具有第二厚度的矽層50。在濺射程序中施加的矽層50可以以約50 nm的厚度存在。
使用兩個單獨的程序來施加不同厚度的矽層40、矽層50可以減少所得的器件10中的缺陷，增加產率，增加產量，並且增加容量。此外，所施加的矽層可以改變器件的應力概況。此外，所施加的矽層可以增加器件的耐久性。

實施例
實施例1 - 器件10如下製造：使用具有3 mm的厚度的不銹鋼的硬遮罩材料20作為基底。使用雙絲電弧噴塗程序將鋁層30施加到不銹鋼板20上。鋁層30的厚度為0.1 mm。使用等離子體噴塗程序將具有第一厚度的矽層40施加到鋁層30上。矽層40的厚度為0.1 mm。將具有第二厚度的矽層50濺射沉積到具有第一厚度的等離子體噴塗的矽層40上。濺射沉積的矽層50的厚度為50 nm。圖2A-圖4B是根據該方法製造的器件的圖像。
從前面的描述中，本領域技術人員可以理解，本教示可以以多種形式實現。因此，雖然已經關於其特定的實施方案和實施例描述了這些教示，但是本教示的真實範圍不應該被如此限制。可以做出各種變化和修改，而不脫離本文教示的範圍。
本範圍公開內容將被廣泛地解釋。意圖本公開內容公開實現本文公開的器件、活動和機械動作的等效物、設備(means)、系統和方法。對於所公開的每個器件、物品、方法、設備、機械元件或機構，意圖本公開內容也涵蓋在其公開內容中，並且教示了用於實踐本文公開的許多方面、機構和器件的等效物、設備、系統和方法。此外，本公開內容涉及塗層及其許多方面、特徵和要素。這樣的器件在其使用和操作中可以是動態的，本公開內容意圖涵蓋使用該器件和/或製造物品的等效物、設備、系統和方法，及其與本文公開的操作和功能的描述和精神一致的許多方面。本申請的請求項同樣被廣泛地解釋。
本文中在其許多實施方案中對本發明的描述在本質上僅僅是示例性的，並且因此不偏離本發明的主旨的變型意圖在本發明的範圍內。這樣的變型不應被視為背離本發明的精神和範圍。
從詳細描述和附圖中可以更全面地理解在本申請的若干方面和實施方案中的本公開內容，其中：
圖1是根據本發明的方面的器件的橫截面；
圖2A和圖2B是根據本發明的方面的器件的圖像；
圖3A和圖3B是根據本發明的方面的器件的圖像；和
圖4A和圖4B是根據本發明的方面的器件的圖像；
在整個本說明書和附圖中，相同的附圖標記表示相同的要素。

Claims (20)

  1. 一種器件，其包括： 硬遮罩材料； 包括鋁或銅的層；和 具有第一厚度的矽層。
  2. 如請求項1所述的器件，其還包括具有第二厚度的矽層。
  3. 如請求項1所述的器件，其中所述硬遮罩材料是金屬。
  4. 如請求項1所述的器件，其中所述硬遮罩材料是週期表的第1族至第13族的元素。
  5. 如請求項1所述的器件，其中所述硬遮罩材料是鋼或鋁。
  6. 如請求項1所述的器件，其中所述硬遮罩材料具有在從約1 mm至約5 mm的範圍內的厚度。
  7. 如請求項1所述的器件，其中包括鋁或銅的所述層是粗糙的。
  8. 如請求項1所述的器件，其中包括鋁或銅的所述層能夠具有約0.001 mm至約5 mm的厚度。
  9. 如請求項1所述的器件，其中所述矽層以約0.05mm至約2mm的第一厚度存在。
  10. 如請求項2所述的器件，其中所述矽層以約10 nm至約100 nm的第二厚度存在。
  11. 一種製造器件的方法，其包括： 提供硬遮罩材料； 使用雙絲電弧噴塗程序在所述硬遮罩材料的頂部上施加一層；以及 使用等離子體噴塗程序在使用雙絲電弧噴塗程序施加的層的頂部上施加具有第一厚度的矽層。
  12. 如請求項11所述的方法，其中所述硬遮罩材料是鋼或鋁。
  13. 如請求項11所述的方法，其中使用雙絲電弧噴塗程序施加的層是鋁層。
  14. 如請求項11所述的方法，其中使用雙絲電弧噴塗程序施加的層是銅層。
  15. 如請求項11所述的方法，其還包括在使用等離子體噴塗程序施加矽層之後，在濺射程序中施加具有第二厚度的矽層。
  16. 如請求項11所述的方法，其中所施加的具有第一厚度的矽層改變所述器件的應力概況。
  17. 如請求項11所述的方法，其中所施加的具有第一厚度的矽層增加所述器件的耐久性。
  18. 如請求項11所述的方法，其中所述雙絲電弧噴塗程序包括向反應室提供至少一種選自由金屬、金屬合金、金屬化合物和陶瓷組成的群組的起始材料。
  19. 如請求項18所述的方法，其中所述雙絲電弧噴塗程序還包括操作雙絲電弧噴嘴，所述雙絲電弧噴嘴包括兩根絲線和被可控地供給到所述反應室中的工作氣體，以在兩根絲線的兩個會聚的前端之間形成電弧，以在所述前端加熱並熔化至少一種起始材料，用於提供沿預定的方向行進的液滴流。
  20. 如請求項19所述的方法，其中所述雙電弧噴塗程序還包括操作高能量源，用於在所述電弧附近和在所述反應室內部產生蒸發區，其中所述液滴被蒸發以形成蒸汽物質。
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