CN110060980A - 硬屏蔽上的硅涂层 - Google Patents

硬屏蔽上的硅涂层 Download PDF

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Publication number
CN110060980A
CN110060980A CN201910108416.8A CN201910108416A CN110060980A CN 110060980 A CN110060980 A CN 110060980A CN 201910108416 A CN201910108416 A CN 201910108416A CN 110060980 A CN110060980 A CN 110060980A
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China
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thickness
silicon layer
layer
hard shielding
shielding material
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CN201910108416.8A
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CN110060980B (zh
Inventor
亚当·普罗伊斯
理查德·A·布兰得利
乔治·J·欧肯法斯
马库斯·K·提尔斯科
安德鲁·克拉克
马吕斯·格里戈尼斯
安迪·什卡布科
尼克·戴维斯
托尼·科特雷尔
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Only Yahweh Communication Technology Co Ltd
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Only Yahweh Communication Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/012—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of aluminium or an aluminium alloy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
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    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
    • B32B15/015—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium the said other metal being copper or nickel or an alloy thereof
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    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C4/06—Metallic material
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Abstract

本申请涉及硬屏蔽上的硅涂层。公开了一种器件，所述器件包括硬屏蔽材料；包括铝或铜的层；和具有第一厚度的硅层。所述器件还可以包括具有第二厚度的硅层。还公开了制造所述器件的方法。

Description

硬屏蔽上的硅涂层
发明领域
本公开内容总体上涉及一种器件，所述器件包括硬屏蔽材料；包括铝或铜的层；和具有第一厚度的硅层。所述器件还可以包括具有第二厚度的硅层。还公开了制造所述器件的方法。所述器件可以包括较少的缺陷并且可以具有增加的耐久性。
发明背景
过量的涂层材料可以附着至溅射涂覆室的壁。溅射室的壁上的涂层可以破裂、脱落，并且可以产生灰尘。溅射涂覆室的每个使用周期都增加了可以在被沉积在涂覆室中的涂层中看到的缺陷的数量和类型。增加的缺陷的数量导致降低的收率，这导致通过涂覆室的较低产量，这导致较低的容量。
发明概述
在一个方面中，公开了一种器件，所述器件包括硬屏蔽材料；包括铝或铜的层；和硅层。
在另一个方面中，公开了一种制造器件的方法，该方法包括提供硬屏蔽材料；使用双丝电弧喷涂工艺(twin wire arc spray process)在硬屏蔽材料的顶部上施加一层；以及使用等离子体喷涂工艺在使用双丝电弧喷涂工艺施加的层的顶部上施加具有第一厚度的硅层。
各个实施方案的另外的特征和优点将部分地在以下的描述中阐述，并且部分地从描述中将是明显的或者可以通过实践各个实施方案而得知。各个实施方案的目的和其他优点将通过在本文的描述中特别指出的要素和组合来实现和获得。
附图简述
从详细描述和附图中可以更全面地理解在其若干方面和实施方案中的本公开内容，其中：
图1是根据本发明的方面的器件的横截面；
图2A和图2B是根据本发明的方面的器件的图像；
图3A和图3B是根据本发明的方面的器件的图像；和
图4A和图4B是根据本发明的方面的器件的图像；
在整个本说明书和附图中，相同的附图标记表示相同的要素。
发明详述
应理解，前述的一般性描述和下面的详细描述两者仅是示例性的和解释性的，并且意图提供对本教导的各种实施方案的解释。每个图中所示的层/部件可以关于特定的图被描述，但是应当理解，特定层/部件的描述将适用于其他图中的等效层/部件。
在其广泛和变化的实施方案中，本文公开了器件10，所述器件10包括硬屏蔽材料20；包括铝或铜的层30；和具有第一厚度的硅层40。如图1所示，该器件可以包括硬屏蔽材料20；包括铝或铜的层30；具有第一厚度的硅层40；和具有第二厚度的硅层50。图2A-图4B是如图1所示的器件的图像。
硬屏蔽材料202可以是任何合适的基底材料。在一个方面中，硬屏蔽材料20可以是金属。如本文所使用的，术语“金属”指的是周期表的第2至13族(包括第2族和第13族)的元素，加上第14族和第15族中的选定元素。因此，术语“金属”广义地指的是以下元素：
第2或IIA族：铍(Be)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)和镭(Ra)。
第3-12族：过渡金属(第IIIB族、第IVB族、第VB族、第VIB族、第VIIB族、第VIII族、第IB族和第IIB族)，包括钪(Sc)、钇(Y)、钛(Ti)、锆(Zr)、铪(Hf)、钒(V)、铌(Nb)、钽(Ta)、铬(Cr)、钼(Mo)、钨(W)、锰(Mn)、锝(Tc)、铼(Re)、铁(Fe)、钌(Ru)、锇(Os)、钴(Co)、铑(Rh)、铱(Ir)、镍(Ni)、钯(Pd)、铂(Pt)、铜(Cu)、银(Ag)、金(Au)、锌(Zn)、镉(Cd)和汞(Hg)。
第13或IIIA族：硼(B)、铝(Al)、镓(Ga)、铟(In)和铊(Tl)。
镧系元素：镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)和镥(Lu)。
第14或IVA族：锗(Ge)、锡(Sn)和铅(Pb)。
第15或VA族：锑(Sn)和铋(Bi)。
在一个方面中，硬屏蔽材料20可以是钢例如不锈钢或铝。硬屏蔽材料20可以具有在从约1mm至约5mm的范围内的厚度，例如从约2mm至约4mm的范围内的厚度，并且作为另外的例子，约3mm厚。预期也可以使用在所公开的范围内的任何厚度。
在所公开的器件10中，包括铝或铜的层30可以施加在硬屏蔽材料20的顶部上。层30可以是粗糙的金属，例如粗糙的铝层或粗糙的铜层。在一个方面中，此层30可以使用双丝电弧喷涂工艺施加。双丝电弧喷涂工艺可以包括各种步骤，例如：(A)向反应室提供至少一种选自由金属、金属合金、金属化合物和陶瓷组成的组的起始材料；(B)操作包括两根丝线和被可控地供给到腔室中的工作气体的双丝电弧喷嘴，以在两根丝线的两个会聚的前端(leading tip)之间形成电弧，以在前端加热并熔化起始材料，用于提供沿预定的方向行进的液滴流；以及(C)操作高能量源，用于在电弧附近和在腔室内部产生蒸发区，其中液滴被蒸发以形成蒸汽物质。两根丝线可以被连续地供给到腔室中，其中丝线的前端以高供给速率连续地熔化(并且部分地蒸发)，用于在不间断的情况下并且以高的生产率连续地产生蒸汽材料。蒸汽材料可以撞击并沉积到硬屏蔽材料例如基底上，以形成薄膜或涂层。可以调节基底表面附近的温度，使得蒸汽材料冷凝并形成涂层，例如铝或铜的涂层。
工作气体可以选自例如氢、氧、碳、氮、氯、氟、硼和硫，以分别形成金属氢化物、氧化物、碳化物、氮化物、氯化物、氟化物、硼化物和硫化物及其组合。
起始材料可以包括呈丝线的两种不同材料。两种不同的材料可以以这样的方式构成两根丝线，该方式使得两根丝线具有不同的材料组成。
两根金属丝线可以由动力辊驱动，以与两个相应的导电套(conductive jacket)物理接触，所述导电套通过导电块被供应有“+”和“-”电压或脉冲功率。电压极性可以颠倒；即，“-”和“+”代替“+”和“-”。电压可以来自DC或脉冲电源。两根丝线的下端可以以约30°-60°的角度彼此接近。可以使两端彼此接触持续短的时间段。由于高电流密度，这样的“短路”接触可以产生超高温度，导致电离电弧的形成。稳定的电弧可以被维持，条件是电流被持续地供应，维持一定水平的气体压力，并且丝线以恒定或脉动速度供给。通过气体通道从气体源(例如压缩空气瓶)引入的压缩空气流也可以用于将液体流向下带入到蒸发区中。
包括铝或铜的层30可以以约0.001mm至约5mm的厚度，例如从约0.05mm至约4mm的厚度，并且作为另外的实例从约0.1mm至约3mm的厚度，施加在硬屏蔽材料20的顶部上。在一个方面中，层20可以使用双丝电弧喷涂工艺施加以实现约0.1mm的厚度。
在所公开的器件10中，具有第一厚度的硅层40可以施加到包括铝或铜的层30上。硅层40可以使用等离子体喷涂工艺来施加。等离子体喷涂工艺可以使用DC电弧以产生高温(1500℃)电离等离子体气体流。材料例如硅可以在惰性气体流中被携带到等离子体射流中，在等离子体射流中，材料被加热并被推向基底，例如施加在硬屏蔽材料的顶部上的铝或铜的暴露层。等离子体喷枪可以包括铜阳极和钨阴极，两者都可以是水冷的。等离子体气体，例如氩气、氮气、氢气和氦气，可以围绕阴极流动并穿过阳极，所述阳极可以被成形为收缩喷嘴。
具有第一厚度的硅层40可以以约0.05mm至约2mm，例如从约0.08mm至约1.5mm，并且作为另外的实例从约0.1mm至约1mm的第一厚度存在。
由于存在相对于彼此不同的材料，可能会发生应力和由此产生的缺陷。例如，包括铝或铜的层30可以在相邻的硅层40中产生应力和缺陷，该硅层40具有通过等离子体喷涂工艺施加的第一厚度。然而，由于硅层40的第一厚度，这些缺陷可以被减少或最小化。例如，缺陷可能仅存在于从包括铝或铜的层进入硅层40的20nm内。因此，缺陷不会一直延伸穿过硅层40。
另外，具有第一厚度的硅层40可以具有与硅层50相似的性质，所述硅层50具有第二厚度并且经由溅射沉积工艺施加。
器件10还可以包括具有第二厚度的硅层50，所述硅层50已经通过溅射沉积工艺被施加到具有第一厚度的硅层40上，该硅层40通过等离子体喷涂工艺施加。硅层50可以以从约10nm至约100nm，例如从约30nm至约80nm，并且作为另外的实例从约45nm至约60nm的第二厚度存在。
制造器件10的方法可以包括提供硬屏蔽材料20；使用双丝电弧喷涂工艺在硬屏蔽材料20的顶部上施加层30；以及使用等离子体喷涂工艺在使用双丝电弧喷涂工艺施加的层30的顶部上施加具有第一厚度的硅层40。
如上所讨论的，硬屏蔽材料20可以是任何基底材料。在一个方面中，硬屏蔽材料20是钢或铝。硬屏蔽材料20的厚度可以是约3mm。
在一个方面中，使用双丝电弧喷涂工艺施加的层30是铝层。在另一个方面中，使用双丝电弧喷涂工艺施加的层30是铜层。使用双丝电弧喷涂施加的层30可以具有约1mm的厚度。
使用等离子体喷涂工艺施加的具有第一厚度的硅层40可以使得能够沉积较厚的硅层。此硅层40可以以足够厚的层施加，以避免和/或最小化由于不同材料的存在而发生的缺陷的风险。此外，因为此较厚的硅层40在不同的工艺步骤中施加，所以使得能够溅射沉积具有第二厚度的硅层50以使用较少的材料，即，它是较薄的层。较少材料的使用将降低硅出现在溅射涂覆室壁上、从壁上脱落以及在器件10上产生灰尘的可能性。
制造器件10的方法还包括，在使用等离子体喷涂工艺施加具有第一厚度的硅层40之后，在溅射工艺中施加具有第二厚度的硅层50。在溅射工艺中施加的硅层50可以以约50nm的厚度存在。
使用两个单独的工艺来施加不同厚度的硅层40、硅层50可以减少所得的器件10中的缺陷，增加收率，增加产量，并且增加容量。此外，所施加的硅层可以改变器件的应力概况。此外，所施加的硅层可以增加器件的耐久性。
实施例
实施例1-器件10如下制造：使用具有3mm的厚度的不锈钢的硬屏蔽材料20作为基底。使用双丝电弧喷涂工艺将铝层30施加到不锈钢板20上。铝层30的厚度为0.1mm。使用等离子体喷涂工艺将具有第一厚度的硅层40施加到铝层30上。硅层40的厚度为0.1mm。将具有第二厚度的硅层50溅射沉积到具有第一厚度的等离子体喷涂的硅层40上。溅射沉积的硅层50的厚度为50nm。图2A-图4B是根据该方法制造的器件的图像。
一种制造器件的方法，包括：提供硬屏蔽材料；使用双丝电弧喷涂工艺在硬屏蔽材料的顶部上施加一层；以及使用等离子体喷涂工艺在使用双丝电弧喷涂工艺施加的层的顶部上施加具有第一厚度的硅层。在一些实施方案中，其中所述硬屏蔽材料是钢或铝。在一些实施方案中，其中使用双丝电弧喷涂工艺施加的层是铝层。在一些实施方案中，其中使用双丝电弧喷涂工艺施加的层是铜层。在一些实施方案中，还包括在使用等离子体喷涂工艺施加硅层之后，在溅射工艺中施加具有第二厚度的硅层。在一些实施方案中，其中所施加的具有第一厚度的硅层改变所述器件的应力概况。在一些实施方案中，其中所施加的具有第一厚度的硅层增加所述器件的耐久性。在一些实施方案中，其中所述双丝电弧喷涂工艺包括向反应室提供至少一种选自由金属、金属合金、金属化合物和陶瓷组成的组的起始材料。在前述实施方案中，其中所述双丝电弧喷涂工艺还包括操作双丝电弧喷嘴，所述双丝电弧喷嘴包括两根丝线和被可控地供给到所述反应室中的工作气体，以在两根丝线的两个会聚的前端之间形成电弧，以在所述前端加热并熔化至少一种起始材料，用于提供沿预定的方向行进的液滴流。在前述实施方案中，其中所述双电弧喷涂工艺还包括操作高能量源，用于在所述电弧附近和在所述反应室内部产生蒸发区，其中所述液滴被蒸发以形成蒸汽物质。
从前面的描述中，本领域技术人员可以理解，本教导可以以多种形式实现。因此，虽然已经结合其特定的实施方案和实施例描述了这些教导，但是本教导的真实范围不应该被如此限制。可以做出各种变化和修改，而不脱离本文教导的范围。
本范围公开内容将被广泛地解释。意图本公开内容公开实现本文公开的器件、活动和机械动作的等效物、设备(means)、系统和方法。对于所公开的每个器件、物品、方法、设备、机械元件或机构，意图本公开内容也涵盖在其公开内容中，并且教导了用于实践本文公开的许多方面、机构和器件的等效物、设备、系统和方法。此外，本公开内容涉及涂层及其许多方面、特征和要素。这样的器件在其使用和操作中可以是动态的，本公开内容意图涵盖使用该器件和/或制造物品的等效物、设备、系统和方法，及其与本文公开的操作和功能的描述和精神一致的许多方面。本申请的权利要求同样被广泛地解释。
本文中在其许多实施方案中对本发明的描述在本质上仅仅是示例性的，并且因此不偏离本发明的主旨的变型意图在本发明的范围内。这样的变型不应被视为背离本发明的精神和范围。

Claims (10)

1.一种器件，包括：
硬屏蔽材料；
包括铝或铜的层；和
具有第一厚度的硅层。
2.如权利要求1所述的器件，还包括具有第二厚度的硅层。
3.如权利要求1所述的器件，其中所述硬屏蔽材料是金属。
4.如权利要求1所述的器件，其中所述硬屏蔽材料是周期表的第1族至第13族的元素。
5.如权利要求1所述的器件，其中所述硬屏蔽材料是钢或铝。
6.如权利要求1所述的器件，其中所述硬屏蔽材料具有在从约1mm至约5mm的范围内的厚度。
7.如权利要求1所述的器件，其中包括铝或铜的所述层是粗糙的。
8.如权利要求1所述的器件，其中包括铝或铜的所述层能够具有约0.001mm至约5mm的厚度。
9.如权利要求1所述的器件，其中所述硅层以约0.05mm至约2mm的第一厚度存在。
10.如权利要求2所述的器件，其中所述硅层以约10nm至约100nm的第二厚度存在。
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