TW201929259A - Light-emitting device - Google Patents

Abstract

A light-emitting device comprises: a light-emitting stack comprising a mesa area and a lower area, and the mesa area comprises a first outer periphery; a transparent conductive layer on the mesa area of the light-emitting stack, and wherein, from a top-view of the light-emitting device, the transparent conductive layer comprises a second outer periphery in the first outer periphery, and a distance between the first outer periphery and the second outer periphery is 11~28 [mu]m.

Description

Light-emitting element

The present invention relates to a light-emitting element, and more particularly to a light-emitting element having a transparent conductive layer.

With the advancement of semiconductor technology, today's optoelectronic semiconductor components such as laser or light emitting diodes (LEDs) have been widely used in many fields, such as communication, lighting, display, etc., especially LEDs. With high brightness and high color rendering, coupled with power saving, small size, low voltage drive and mercury free, LEDs have been widely used to replace traditional lighting technology in display and lighting applications. . Therefore, improving the photoelectric conversion efficiency of the optoelectronic semiconductor component, for example, how to balance the luminous efficiency and the electrical conductivity of the light-emitting diode, has been one of the focuses of research and development by researchers.

The invention provides a light-emitting element comprising: a light-emitting layer comprising a high-level region and a recessed region, wherein the high-level region has a first outer contour; and a transparent conductive layer is located on the high-level region of the light-emitting layer; Viewed from a top view, the transparent conductive layer has a second outer contour located within the first outer contour, and the first outer contour and the second outer contour have a spacing between about 11 and 28 μm.

The present invention will be described with reference to the drawings, in which the same or the same reference numerals are used in the drawings or the description, and in the drawings, the shape or thickness of the elements may be enlarged or reduced. It is to be noted that elements not shown or described in the specification may be in a form known to those skilled in the art.

Please refer to FIGS. 1 and 2 , which are respectively a schematic plan view and a cross-sectional view of the light-emitting element 100 according to the first embodiment of the present invention. The light emitting device 100 has a light emitting layer 1 and a transparent conductive layer 2 disposed on the light emitting layer 1. The light emitting layer 1 comprises a first semiconductor layer 11, a second semiconductor layer 12 and an active structure 13 disposed at the first Between the semiconductor layer 11 and the second semiconductor layer 12, and the active structure 13 and the second semiconductor layer 12 are sequentially formed on the first semiconductor layer 11, and part of the second semiconductor layer 12 and a portion of the active structure 13 are removed. A portion of the first semiconductor layer 11 is exposed such that the light-emitting layer 1 forms a recessed region 14 and a land portion 15 protruding from the recessed region 14. Viewed in a cross-sectional view, the recessed region 14 includes a portion of the first semiconductor layer 11, and the upper region 15 includes another portion of the first semiconductor layer 11, the active structure 13 and the second semiconductor layer 12 sequentially stacked on the first On the semiconductor layer 11. Viewed from a plan view, the elevated region 15 has a first outer contour 151, the first outer contour 151 is the boundary of the second semiconductor layer 12, and the exposed portion of the first semiconductor layer 11 is located around the first outer contour 151. Outside the scope. In detail, the high-altitude region 15 has a side S that connects the exposed surface of the first semiconductor layer 11 located in the recessed region 14 from the cross-sectional view of the light-emitting element 100, and the position of the side S corresponds to the first outer contour 151. The first semiconductor layer 11 and the second semiconductor layer 12 respectively have different first conductivity and second conductivity to respectively provide electrons and holes, or respectively provide holes and electrons; and the active structure 13 may comprise a single hetero Single heterostructure, double heterostructure or multiple quantum wells. The material of the first semiconductor layer 11, the second semiconductor layer 12 and the active structure 13 is a tri-five compound semiconductor, and may be, for example, GaAs, InGaAs, AlGaAs, AlInGaAs, GaP, InGaP, AlInP, AlGaInP, GaN, InGaN, AlGaN, AlInGaN, AlAsSb, InGaAsP, InGaAsN, AlGaAsP, and the like. In the examples of the present invention, unless otherwise specified, the chemical expressions include "chemically-accepting compounds" and "non-chemically-accepting compounds", wherein "chemically-accepting compounds" are, for example, total of tri-family elements. The elemental dose is the same as the total elemental dose of the Group 5 element. Conversely, the "non-chemically-accepting compound" such as the total elemental dose of the Group III element is different from the total elemental dose of the Group V element. For example, the chemical expression is AlGaAs, which means that the tri-group element aluminum (Al) and/or gallium (Ga), and the five-element element arsenic (As), of which the tri-group elements (aluminum and/or gallium) are total. The elemental dose may be the same as or different from the total elemental dose of the Group V element (arsenic). Further, if each of the compounds represented by the chemical expression is a chemical compound, AlGaAs represents Al _x Ga _(1-x) As, wherein 0 ≦ x ≦ 1; and AlInP represents Al _x In _{(1-x )} P, wherein, 0 ≦ x ≦ 1; AlGaInP representative of _{(Al y Ga (1-y} )) 1-x In x P, wherein, 0 ≦ x ≦ 1,0 ≦ y ≦ 1; AlGaN Representative Al _x Ga _{( 1-x)} N, where 0≦x≦1; AlAsSb represents AlAs _x Sb _(1-x) , where 0≦x≦1; InGaP represents In _x Ga _1-x P, where 0≦x≦1 InGaAsP represents In _x Ga _1-x As _1-y P _y , where 0≦x≦1, 0≦y≦1; InGaAsN represents In _x Ga _1-x As _1-y N _y , where 0≦x ≦1,0≦y≦1; AlGaAsP represents Al _x Ga _1-x As _1-y P _y , where 0≦x≦1,0≦y≦1; InGaAs represents In _x Ga _1-x As, wherein 0≦x≦1.

In the first embodiment, the light-emitting laminate 1 has a long side 1a and a short side 1b connected to the long side 1a, and the ratio of the length of the short side 1b to the length of the long side 1a is preferably about 0.15 to 0.45, the light-emitting laminate 1 has an elongated top view appearance, and the upper surface area of the light-emitting layer 1 of the light-emitting element 100 can be further less than 0.5 mm ² or less than 0.35 mm ² , for example, the light-emitting laminate 1 has 0.26 mm. The upper surface area of ² . The light-emitting element 100 of the first embodiment has a small-area, elongated light-emitting laminate 1 and is therefore particularly suitable for use in certain fields, for example, in a light-emitting module of a backlight unit, as a mobile phone, a tablet computer, and a notebook computer. The backlight unit of the 3C product, and when the elongated light-emitting layer 1 is matched with the transparent conductive layer 2 of the embodiment of the invention, the current can be more evenly dispersed in the light-emitting layer 1, thereby increasing the luminous efficiency of the light-emitting element 100. However, the invention is not limited thereto. The light-emitting laminate 1 of the light-emitting element 100 of the first embodiment has a symmetrical two long sides 1a and a symmetrical short side 1b, and both ends of the long sides 1a are connected to the short sides 1b. Further, the top region 15 of the light-emitting element 100 of the first embodiment has a length L in the direction along the long side 1a and a first width W1 and one in the direction along the short side 1b. The second width W2 is smaller than the first width W1. Preferably, the ratio of the first width W1 to the length L of the light-emitting element 100 in one embodiment is about 0.14 to 0.4, and the ratio of the second width W2 to the length L is about 0.12 to 0.35, so that the light-emitting element can be further improved. 100 luminous efficiency. Here, the above-mentioned "direction along the long side 1a" is the same direction as the y-axis of the first drawing, and "the direction along the short side 1b" is the same direction as the x-axis of the first drawing.

Referring to FIGS. 1 and 2, the light-emitting element 100 can selectively include a substrate 3, and the light-emitting layer 1 is disposed on the substrate 3. In the first embodiment, the first semiconductor layer 11, the active structure 13, and the second semiconductor The layers 12 are sequentially stacked on the substrate 3, and the substrate 3 can be used to support the light-emitting laminate 1, thereby increasing the mechanical strength of the entire light-emitting element 100, but the function of the substrate 3 is not limited thereto. In the first embodiment, the substrate 3 has a first side 31 and a second side 32 which are smaller than the first side 31. The first side 31 corresponds to the long side 1a of the light emitting laminate 1, and the second side 32 is The short side 1b corresponds, and the shape of the substrate 3 is substantially the same as that of the light-emitting laminate 1 in plan view, and the outline of the substrate 3 substantially coincides with the outer contour of the light-emitting laminate 1, however, in another embodiment, the substrate 3 The outline may also be located outside the outer contour of the light-emitting laminate 1, and the invention is not limited thereto. The substrate 3 in the first embodiment may be a transparent substrate, a conductive substrate or an insulating substrate, which is not limited herein. The light-emitting layer stack 1 of the first embodiment can be grown on the substrate 3 by an epitaxial method such as metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or hydride vapor phase epitaxy (HVPE). Alternatively, on the other growth substrate, if the light-emitting laminate 1 is formed on the growth substrate, the light-emitting laminate 1 can be bonded to the substrate 3 by a substrate transfer technique and the growth substrate can be selectively removed or retained. The light-emitting layer 1 of the light-emitting element 100 in the first embodiment is directly grown on the substrate 3, and a buffer layer (not shown) may be selectively disposed between the light-emitting layer 1 and the substrate 3. The buffer layer may include more The material of the crystal, single crystal material, such as the buffer layer, may comprise gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), etc.; or, in another embodiment, the light emitting layer 1 is transparent. The substrate transfer technique is bonded to the substrate 3, and the buffer layer can serve as an adhesive layer to fix the light-emitting laminate 1 on the transparent substrate 3. In this case, the material of the buffer layer may comprise a transparent polymer material, an oxide, a nitride or Fluoride, etc. In addition, the material of the substrate 3 in the first embodiment may be, but not limited to, a transparent insulating material such as Sapphire, Diamond, Glass, Quartz, Acryl, and ring. Epoxy, aluminum nitride (AlN), or may be a transparent conductive oxide (TCO) such as zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), gallium oxide (Ga ₂ O ₃ ), lithium gallium oxide (LiGaO ₂ ), lithium aluminum oxide (LiAlO ₂ ) or magnesium aluminum oxide (MgAl ₂ O ₄ ), etc., or may be a semiconductor material such as tantalum carbide (SiC), gallium arsenide (GaAs), phosphorus GaP, GaAsP, ZnSe, ZnSe or InP, or metal materials such as aluminum (Al), copper (Cu) Or an element such as molybdenum (Mo) or tungsten (W) or a combination of the above elements.

As shown in FIGS. 1 and 2, the transparent conductive layer 2 in the first embodiment is disposed on the light-emitting laminate 1, and the transparent conductive layer 2 has a second outer contour 21 formed on the first outer surface of the light-emitting laminate 1. In the outline 151, in other words, the second outer contour 21 is closer to the geometric center C of the light-emitting element 100 than the first outer contour 151, so that the second outer contour 21 is located within the range of the first outer contour 151. The area enclosed by the second outer contour 21 is smaller than the area surrounded by the first outer contour 151, that is, the surface area on one of the transparent conductive layers 2 is smaller than the upper surface area of one of the high-profile regions 15. In an embodiment, the first outer contour 151 and the second outer contour 21 have a spacing d of about 11 μm to 28 μm, or the spacing d is 13 μm to 26 μm, or the spacing d is 17 μm to 25 μm. In still another embodiment, the ratio of the pitch d to the short side 1b is about 0.04 to 0.15; in still another embodiment, the upper surface area of the transparent conductive layer 2 does not exceed about 85% of the surface area of the upper mesa 15 , of which preferred The upper surface area of the transparent conductive layer 2 is not less than about 62% of the surface area on the upper mesa 12, so that the current can be more uniformly distributed in the light-emitting laminate 1 by the arrangement of the transparent conductive layer 2. Preferably, the upper surface area of the transparent conductive layer 2 of another embodiment of the present invention is about 65% to 82% of the upper surface area of the high-area region 18, so that the transparent conductive layer 2 can have good current conduction efficiency and can also be avoided. Produces unnecessary shading. In the light-emitting element 100 in the first embodiment, the minimum distance between the first outer contour 151 and the second outer contour 21 is the same at each point of the light-emitting element 100, that is, the distance d is constant. For example, the distance between the first outer contour 151 and the second outer contour 21 near the long side 1a is substantially equal to the distance between the first outer contour 151 and the second outer contour 21 near the short side 1b. In the first embodiment, the shape of the second outer contour 21 of the transparent conductive layer 2 is similar to the shape of the first outer contour 151 of the light-emitting laminate 1, such that the first outer contour 151 is conformally formed and second. Outside the outer contour 21; in another embodiment, the shape of the second outer contour 21 and the first outer contour 151 may be different, so that the first outer contour 151 is non-conformally formed outside the second outer contour 21, the present invention The shape of the second outer contour 21 is not limited thereto. In the first embodiment, the transparent conductive layer 2 of the light-emitting element 100 further has a second inner contour 22 located within the second outer contour 21, and the second inner contour 22 may have an arbitrary shape, for example, Circular or elliptical, and disposed relative to the position of an electrode pad (the relevant structure of the electrode pad is as follows), so that at least part of the area under the electrode pad does not have the transparent conductive layer 2, and the current can be prevented from being directly transmitted by the electrode pad through the transparent conductive The layer 2 is injected into the light-emitting laminate 1 and the current is diffused to the region of the light-emitting laminate 1 remote from the electrode pad, thereby increasing the current spreading capability of the transparent conductive layer 2. The transparent conductive layer of a general light-emitting element has a high coverage over the light-emitting layer, for example, a coverage ratio of more than 94%, and a contour of the transparent conductive layer and a contour of the high-level region are small, for example, a profile of not more than 8 μm, even a transparent conductive layer. 2 has high light transmittance, and when most of the light-emitting laminate is shielded by the transparent conductive layer, the light-emitting efficiency is still poor. The light-emitting element 100 disclosed in the first embodiment reduces the light-shielding effect of the transparent conductive layer 2 while maintaining the current spreading capability, so that the light-emitting element 100 is significantly improved in luminous efficiency. The "coverage" as described above refers to the percentage of the upper surface area of the transparent conductive layer of the general light-emitting element to the upper surface area of the high-level region; in addition, the upper surface area of the high-level region 15 and the transparent conductive layer 2 can be obtained from the light-emitting element 100. After magnifying the image (for example, magnifying the image of the light-emitting element 100 by an optical microscope or an electron microscope), image processing is performed to obtain an area surrounded by the first outer contour 151 and an area surrounded by the second outer contour 21, respectively. The method of image processing can be calculated by computer soft volume or manual integration, and there is no limit to this. Wherein, when the transparent conductive layer 2 has the second inner contour 22, the upper surface area of the transparent conductive layer 2 is the upper surface area of the region between the second outer contour 21 and the second inner contour 22.

The transparent conductive layer 2 of the first embodiment of the present invention may be selectively formed over the second semiconductor layer 12 by sputtering, but is not limited thereto. In one embodiment, the transparent conductive layer 2 has a transmittance of 85% or more for the emitted light of the active structure 13 and a resistivity of 8 Ï 10 ^-4 (Ω-cm) or less. In still another embodiment, the transparent conductive layer 2 comprises a material such as indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide. (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), zinc oxide (ZnO), gallium phosphide (GaP), indium zinc oxide (IZO), diamond-like carbon film (DLC), indium gallium oxide ( IGO), gallium aluminum oxide (GAZO) or graphene (Graphene), or the like, or a combination of any two or more of the above materials, the invention is not limited thereto.

Referring to Table 1, this is a comparison table of light-emitting characteristics of light-emitting elements (groups A1 to A4) of different embodiments of the present invention and light-emitting elements of a control group, wherein the long side 1a of the light-emitting laminate 1 of each embodiment is 1143 μm. And the short side 1b is 225 μm, wherein the ratio of the length of the short side to the length of the long side is 0.197. From the top view, the light-emitting elements of the embodiments of the present table have an elongated shape. The spacing between the first outer contour and the second outer contour of the control group is 8 μm, and the spacing d of the first group A1 to A4 is 13 μm, 18 μm, 23 μm, and 28 μm, respectively. The brightness performance of the A4 group was better than that of the control group. Among them, the brightness enhancement effect of the A3 group was the most significant. Therefore, in the light-emitting element of the different embodiments of the present invention, when the pitch d is 11 μm to 28 μm, and the surface area of the transparent conductive layer 2 occupies 62% to 85% of the surface area of the high-area region 15, the spacing is 8 A light-emitting element having a surface area of more than 85% on the transparent conductive layer and having a surface area of more than 85% on the transparent conductive layer has better luminous efficiency.

Referring to Table 2, which is a table of illuminating characteristics of a luminescent element according to still another embodiment of the present invention with a pitch as a variable, the luminescent layer shown in Table 2 has a long side of 1016 μm and a short side of 560 μm. The ratio of the length of the short side to the length of the long side is 0.55. From the top view, the light-emitting elements of the embodiments of the present table are different from the elongated shape of the embodiment of Table 1, and the light-emitting elements of the embodiment of the present invention are substantially square. The table shows the luminescence properties of the control group and the group B at a distance d of 8 μm and 13 μm, respectively. At this time, the surface area of the transparent conductive layer 2 of the control group and the group B accounted for 90.08 of the surface area of the high-level region 15 respectively. % and 84.35%, from the data presented in Table 2, the brightness performance of Group B was not as good as that of the control group. As can be seen from Table 2, when the pitch d is increased, that is, when the ratio of the upper surface area of the transparent conductive layer 2 to the surface area of the high-level region 15 is less than 85%, the phenomenon in which the brightness of the square light-emitting element is improved is not remarkable. Therefore, in the light-emitting device of the present invention, preferably, when the ratio of the short side to the long side is about 0.15 to 0.45, if the area of the transparent conductive layer 2 is adjusted to be 62% to 85% of the area of the high-level region 15, Improve the luminous efficiency of the light-emitting element.

3 and 4 are schematic plan views of the light-emitting elements 200 and 300 according to the second and third embodiments of the present invention, respectively, and the relationship between the members and the members in the light-emitting elements 200 and 300 of the second and third embodiments. The light-emitting element 100 of the first embodiment is similar, except that the spacing d between the first outer contour 151 of the light-emitting laminate 1 and the second outer contour 21 of the transparent conductive layer 2 is not constant and includes at least Two different values, that is to say that the minimum distance of the first outer contour 151 of the light-emitting elements 200, 300 from the second outer contour 21 is not the same at each of the light-emitting elements 200, 300, for example in the second embodiment, the spacing d includes a first spacing d1 and a second spacing d2 different from the first spacing d1. In detail, as shown in FIG. 3, the light-emitting element 100 of the present embodiment has a first outer contour 151 and a second outer side on one side in the direction along the long side 1a (i.e., the y-axis direction on the drawing). The contours 21 have a first spacing d1 between them, and in the direction along the short side 1b (ie, the x-axis direction on the drawing), between the first outer contour 151 and the second outer contour 21 on the other side. The second pitch d2 is different from the second pitch d2. For example, the first pitch d1 of the embodiment is greater than the second pitch d2, or for example, in another embodiment, the second pitch d2 may be greater than the first pitch d1. The invention is not limited thereto. For example, the light-emitting laminate 1 of the present embodiment or the following embodiments has two long sides 1a and two short sides 1b, and in one embodiment, near one long side 1a. On one side, the first outer contour 151 and the second outer contour 21 have a spacing d, and on the side close to the other long side 1a and on the side close to either short side 1b, the first The outer contour 151 and the second outer contour 21 have the same other spacing d', and the spacing d' is different from the spacing d; in yet another embodiment, on the side close to either long side 1a, the first The outer contour 151 and the second outer contour 21 have the same spacing d, and on the side close to either short side 1b, the first outer contour 151 and the second outer contour 21 have the same other spacing. d', and the spacing d' is different from the spacing d; in still another embodiment, on a side close to one of its long sides 1a and on a side close to a short side 1b thereof, the first outer contour 151 and the second outer contour 21 has the same spacing d, and on the side close to the other long side 1a and on the side close to the other short side 1b, the first outer contour 151 and the second outer contour 2 1 has the same other spacing d', and the spacing d' is different from the spacing d; in still another embodiment, on the side close to either long side 1a and on the side close to either short side 1b, An outer contour 151 and a second outer contour 21 respectively have different spacings d; in another embodiment, on a side close to a short side 1b thereof, between the first outer contour 151 and the second outer contour 21 Having a spacing d, and on the side close to the other short side 1b and on the side close to either long side 1a, the first outer contour 151 and the second outer contour 21 have the same other spacing d ', and the spacing d' is different from the spacing d.

Fig. 4 is a schematic plan view showing a light-emitting element 300 according to a third embodiment of the present invention. The light-emitting element 300 of the embodiment of the present invention further includes an electrode group 4 having a first electrode 41 and a second electrode 42 electrically connected to the second semiconductor layer 12 and the first semiconductor layer 11, respectively. The first electrode 41 has a first electrode pad 411 and a second electrode pad 421 having a second electrode pad 421 disposed on the same side of the light emitting laminate 1 to form a horizontal light emitting structure. In other embodiments, the first electrode pad 411 and the second electrode pad 421 may also be formed on opposite sides of the light emitting laminate 1 to form a vertical light emitting structure. In detail, in the third embodiment, the first electrode 41 is disposed on the upper region 15 and electrically connected to the second semiconductor layer 12, and the second electrode 42 is disposed in the recess region 14 and electrically connected to the exposed first semiconductor layer 11. The first layer 111 and the second end 112 are located adjacent to the two short sides 1b of the light emitting laminate 1 and the first electrode pad 411 is connected. The second electrode pads 421 are respectively disposed on the first end 111 and the second end 112. There is a third spacing d3 between the first outer contour 151 and the second outer contour 21 adjacent to the first electrode pad 411, and a fourth between the first outer contour 151 and the second outer contour 21 adjacent to the second electrode pad 421. The pitch d4 is different from the fourth pitch d4. In detail, as shown in FIG. 4, the first outer contour 151 has a point A1, and the distance from the point A1 to the first electrode pad 411 is compared with any point of the other first outer contour 151 to the first electrode pad 411. The distance is short, and the second outer contour 21 has a point B1. Similarly, the distance from the point B1 to the first electrode pad 411 is shorter than the distance from any point of the other second outer contour 21 to the first electrode pad 411. The distance between the point A1 and the point B1 is the above-described third pitch d3; the first outer contour 151 has a point A2, and the distance from the point A2 to the second electrode pad 421 is compared with any other point of the first outer contour 151. The distance to the second electrode pad 421 is short, and the second outer contour 21 has a point B2, and the distance from the point B2 to the second electrode pad 421 is compared with any other point of the second outer contour 21 to the second electrode pad 421. The distance is short, and the distance between the point A2 and the point B2 is the fourth pitch d4 described above. In this embodiment, the third pitch d3 is greater than the fourth pitch d4, and the area of the transparent conductive layer 2 close to the first end 111 is further reduced under the premise of maintaining good current spreading capability, by partially removing the shadow. The transparent transparent conductive layer 2 achieves the effect of increasing luminous efficiency. More specifically, in the embodiment, the third pitch d3 is about 11 to 28 μm, and the fourth pitch d4 is about 3 to 15 μm. However, the present invention is not limited thereto. In another embodiment, The third pitch d3 is about 12 to 35 μm, and the fourth pitch d4 is about 11 to 28 μm, and a similar effect can be achieved. Further, the outline of the first electrode pad 411 or the second electrode pad 421 is partially aligned with the first outer profile 151 when the light-emitting element 300 of the present embodiment is viewed from a plan view. In this embodiment, the shape of the first outer contour 151 and the arrangement position of the electrode group 4 are matched with each other, and good current spreading ability and luminous efficiency can be obtained.

Please refer to the top view of the light-emitting element 400 of the fourth embodiment of FIG. The members and the members in the light-emitting element 400 of the present embodiment have a relationship similar to that of the light-emitting element 100 of the first embodiment, but have electrode groups 4 of different forms. The first electrode 41 of the electrode group 4 further includes a first extension electrode 412 connected to the first electrode pad 411, and the second electrode 42 further includes a second extension electrode 422 connected to the second electrode pad 421. The first extension electrode 412 The second extension electrode 422 is located in the recessed area 14, and the external current is more uniformly diffused into the light-emitting layer 1 through the first extension electrode 412 and the second extension electrode 422. In the first to third embodiments, the first extension electrode 412 and the second extension electrode 422 are substantially parallel. However, the light-emitting element 400 of the fourth embodiment has first extension electrodes that are not parallel to each other or have one end and are separated from one end. 412 and a second extension electrode 422.

Although the present invention has been disclosed above by way of example, it is not intended to limit the present invention, and the inevitable process error may be considered. The above-mentioned first outer contour 151 and the second outer contour 21 may have a margin of error (for example, 1 to 2 μm). Therefore, when the "pitch d is about 11 μm to 28 μm", it should be understood by those skilled in the art that the pitch d is 9 μm to 30 μm, which is also covered by the present invention. Combinations of some or all of the technical features disclosed in the respective embodiments, which are disclosed in the present invention, are within the spirit and scope of the present invention without departing from the spirit and scope of the present invention. The scope of protection of the present invention is defined by the scope of the appended claims.

100, 200, 300, 400‧‧‧Lighting elements

1‧‧‧Lighting laminate

1a‧‧‧Longside

1b‧‧‧ Short side

11‧‧‧First semiconductor layer

12‧‧‧Second semiconductor layer

13‧‧‧Active structure

14‧‧‧ recessed area

15‧‧‧Gaotai District

151‧‧‧First outline

111‧‧‧ first end

112‧‧‧ second end

2‧‧‧Transparent conductive layer

21‧‧‧Second outline

22‧‧‧Second inner contour

3‧‧‧Substrate

31‧‧‧ first side

32‧‧‧ second side

4‧‧‧electrode group

41‧‧‧First electrode

411‧‧‧First electrode pad

412‧‧‧First extension electrode

42‧‧‧second electrode

421‧‧‧Second electrode pad

422‧‧‧Second extension electrode

S‧‧‧ side

d, d’‧‧‧ spacing

D1‧‧‧first spacing

D2‧‧‧second spacing

D3‧‧‧ third spacing

D4‧‧‧fourth spacing

C‧‧‧Geometry Center

L‧‧‧ length

W1‧‧‧ first width

W2‧‧‧ second width

Fig. 1 is a schematic plan view showing a light-emitting element of a first embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of the light-emitting element of Fig. 1 taken along the line A-A'.

Table 1 is a comparison table of light-emitting characteristics of light-emitting elements of different embodiments of the present invention.

Table 2 is a comparison table of light-emitting characteristics of a light-emitting element according to still another embodiment of the present invention.

Fig. 3 is a schematic plan view showing a light-emitting element of a second embodiment of the present invention.

Fig. 4 is a schematic plan view showing a light-emitting element of a third embodiment of the present invention.

Fig. 5 is a schematic plan view showing a light-emitting element of a fourth embodiment of the present invention.

Claims (10)

A light-emitting element comprising: a light emitting laminate comprising a high land region and a recessed region, the high land region having a first outer contour; a transparent conductive layer is located on the upper region of the light emitting laminate; Wherein, the transparent conductive layer has a second outer contour located within the first outer contour, and a distance between the first outer contour and the second outer contour is about 11 μm. ~28 μm. A light-emitting element according to claim 1, wherein the upper surface area of the transparent conductive layer does not exceed about 85% of the upper surface area of the elevated region. A light-emitting element according to claim 1, wherein the light-emitting layer has a long side and a short side, and the ratio of the short side to the long side is about 0.15 to 0.45. A light-emitting element according to claim 1, wherein the light-emitting layer has a long side and a short side, and the ratio of the pitch to the short side is about 0.04 to 0.15. A light-emitting element according to claim 1, wherein the pitch is a constant value. The illuminating device of claim 1, further comprising a first extending electrode on the upper region of the illuminating stack, and a second extending electrode on the recessed portion of the illuminating stack, wherein the recessed region It is disposed along one edge of the light emitting unit. A light-emitting element according to claim 6, wherein the second extension electrode is not parallel to the first extension electrode by a plan view. A light-emitting element according to claim 1, wherein the upper surface area of the transparent conductive layer is not less than about 62% of the upper surface area of the elevated region, as viewed from above. A light-emitting element according to claim 1, wherein: The spacing includes a first spacing and a second spacing; The light emitting laminate has a long side and a short side, and the first spacing is located in the longitudinal direction, and the second spacing is located in the short side direction, the first spacing is different from the Second spacing. A light-emitting element according to claim 1, wherein: The spacing includes a third spacing and a fourth spacing; The light emitting device further includes a first electrode pad and a second electrode pad respectively disposed at opposite ends of the light emitting layer; The third piece spacing is located between the first outer contour and the second outer contour of the first electrode pad; The fourth pitch is located between the first outer contour and the second outer contour adjacent to the second electrode pad; The third pitch is different from the fourth distance.