TW201926710A - 穿隧式場效電晶體 - Google Patents

穿隧式場效電晶體 Download PDF

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Publication number
TW201926710A
TW201926710A TW107129509A TW107129509A TW201926710A TW 201926710 A TW201926710 A TW 201926710A TW 107129509 A TW107129509 A TW 107129509A TW 107129509 A TW107129509 A TW 107129509A TW 201926710 A TW201926710 A TW 201926710A
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Taiwan
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layer
polar
gallium nitride
type
nitride
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TW107129509A
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English (en)
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彼德 瑞姆瓦爾
麥特西亞斯帕斯拉克
朵爾伯斯 吉爾本
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台灣積體電路製造股份有限公司
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Publication of TW201926710A publication Critical patent/TW201926710A/zh

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Abstract

一種穿隧式場效電晶體包含第一源極/汲極層、第二源極/汲極層以及半導體中間層。第一源極/汲極層包含第一極性側壁。第二源極/汲極層圍繞第一源極/汲極層，第二源極/汲極層與第一源極/汲極層具相反導電類型，半導體中間層位於第二源極/汲極層與第一源極/汲極層的第一極性側壁之間。

Description

穿隧式場效電晶體
本揭露係關於穿隧式場效電晶體。
為了追求更高的元件密度、高表現與低成本，半導體工業進行至奈米尺寸的技術節點，來自製程與設計議題的挑戰使三維設計開始發展，像是多重閘極場效電晶體(field effect transistor)，包含鰭式場效電晶體(fin FET)與環繞式閘極(gate-all-around；GAA)場效電晶體。場效電晶體廣泛地於積體電路晶片中使用，場效電晶體包含源極、汲極與閘極。一般希望大的次臨限斜率(subthreshold slope)(例如小的次臨限擺幅(subthreshold swing))，因為可提升開關電流比，因此可降低漏電流。
於部分實施方式中，半導體元件包含第一源極/汲極層、第二源極/汲極層以及半導體中間層。第一源極/汲極層包含第一極性側壁。第二源極/汲極層圍繞第一源極/汲極層，第二源極/汲極層與第一源極/汲極層具相反導電類 型，半導體中間層位於第二源極/汲極層與第一源極/汲極層的第一極性側壁之間。
10‧‧‧第一區域
12‧‧‧第二區域
100‧‧‧基材
102‧‧‧緩衝層
104、106‧‧‧第一摻雜的磊晶層
108‧‧‧中間層
110、112‧‧‧第二摻雜的磊晶層
114、116‧‧‧高k介電層
118、120‧‧‧閘極金屬層
122、124‧‧‧填充金屬層
126‧‧‧絕緣層
1041‧‧‧n型鰭片
1042‧‧‧水平部分
1061‧‧‧p型鰭片
1062‧‧‧水平部分
1101‧‧‧殼層部分
1102‧‧‧水平部分
1121‧‧‧殼層部分
1122‧‧‧水平部分
LS1、LS2、LS3、LS4、TS5、TS6、TS7、TS8‧‧‧長邊
O1、O2‧‧‧開口
S1、S2、S3、S4、S5、S6、S7、S8‧‧‧步驟
SS1、SS2、SS3、SS4、SS5、SS6‧‧‧短邊
TS1、TS2、TS3、TS4、TS5‧‧‧頂面
閱讀以下詳細敘述並搭配對應之圖式，可了解本揭露之多個樣態。需留意的是，圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上，所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。
第1A圖為包含極性氮化鎵/氮化銦/極性氮化鎵異質接面的半導體元件的能帶圖，其中氮化銦的厚度為1.4奈米；第1B圖為包含極性氮化鎵/氮化銦/極性氮化鎵異質接面的半導體元件的能帶圖，其中氮化銦的厚度為2.4奈米；第1C圖為包含非極性氮化鎵/氮化銦/非極性氮化鎵異質接面的半導體元件的能帶圖；第2圖為根據本揭露之部分實施方式之穿隧式場效電晶體於各種階段下的製造方法；第3、4A、5、6A及7-12圖為根據部分實施方式之以第2圖的方法製作之穿隧式場效電晶體於各種階段的剖面圖；以及第4B、4C、6B及6C圖為根據部分實施方式之以第2圖的方法製作之穿隧式場效電晶體於各種階段的俯視圖。
以下將以圖式及詳細說明清楚說明本揭露之精 神，任何所屬技術領域中具有通常知識者在瞭解本揭露之實施方式後，當可由本揭露所教示之技術，加以改變及修飾，其並不脫離本揭露之精神與範圍。舉例而言，敘述「第一特徵形成於第二特徵上方或上」，於實施方式中將包含第一特徵及第二特徵具有直接接觸；且也將包含第一特徵和第二特徵為非直接接觸，具有額外的特徵形成於第一特徵和第二特徵之間。此外，本揭露在多個範例中將重複使用元件標號以和/或文字。重複的目的在於簡化與釐清，而其本身並不會決定多個實施方式以和/或所討論的配置之間的關係。
此外，方位相對詞彙，如「在…之下」、「下面」、「下」、「上方」或「上」或類似詞彙，在本文中為用來便於描述繪示於圖式中的一個元件或特徵至另外的元件或特徵之關係。方位相對詞彙除了用來描述裝置在圖式中的方位外，其包含裝置於使用或操作下之不同的方位。當裝置被另外設置(旋轉90度或者其他面向的方位)，本文所用的方位相對詞彙同樣可以相應地進行解釋。
環繞式閘極(gate all around；GAA)電晶體可以任何適合的方法被圖案化。舉例而言，結構可被以一或多個光微影製程(包含雙重微影或多重微影製程)而圖案化。一般而言，雙重微影或多重微影製程結合光微影與自對準製程，舉例而言，可使所製造的圖案的間距小於使用單一且直接的光微影製程的間距。舉例而言，於部分實施方式中，犧牲層形成於基材上且被使用光微影製程而圖案化。間隔物以自對準製程沿著被圖案化的犧牲層的邊形成。接著， 犧牲曾被移除，殘餘的間隔物接著被用於圖案化環繞式閘極結構。
在低電壓、節能及微縮化積體電路中，穿隧式場效電晶體(tunnel field-effect transistor；TFET)是取代金屬氧化物半導體場效電晶體(metal-oxide-semiconductor FET；MOSFET)的具有潛力的元件。藉由使用量子穿隧效應(quantum-mechanical tunneling)取代熱發射(thermal emission)，穿隧式場效電晶體的次臨界擺幅(Subthreshold Swing；SS)可達到小於60mV/dec。穿隧式場效電晶體元件使用具有窄能帶(bandgap)的三五族材料，例如砷化銦(indium arsenide；InAs)與銻化鎵(gallium antimonide；GaSb)，以達到高開電流(on-current；Ion)，但關電流(off-current；Ioff)亦高，並無法達到可接受的開/關電流比(Ion/Ioff ratio)。
為了達到低的關電流，穿隧式場效電晶體元件可使用具有寬能帶的三五族化合物取代具有窄能帶的三五族化合物，具有寬能帶的三五族化合物包含三族氮化物，例如：氮化鎵(gallium nitride；GaN)、氮化鋁(aluminum nitride；AlN)或類似物。本揭露所使用的術語「窄能隙(narrow band gap)」可視為能隙小於矽的能隙(例如：小於1.1eV或小於0.7eV)，或是能隙小於寬能隙(wide band gap)，本揭露所使用的術語「寬能隙」可視為能隙大於氮化銦(indium nitride；InN)的能隙或能隙大於3.0eV。
然而，對於使用三族氮化物化合物的元件而 言，寬能隙可能阻撓三族氮化物異質接面(heterogeneous junction)中的能帶間穿隧(interband tunneling)，因此，本揭露的部分實施方式透過使用極化的設計來提供以三氮族化合物異質接面為基礎的穿隧式場效電晶體。透過異質接面的極化設計，極化誘發電荷(polarization-induced charge)可用於產生大的內電場。在足夠高的電場下，能帶間穿隧在寬能隙材料中變得格外重要(例如：三氮族材料)。
為了描述三氮族異質接面中的能帶間穿隧的概念，第1A圖及第1B圖顯示兩個極性氮化鎵/氮化銦/極性氮化鎵異質接面的能帶圖(band diagram)，第1A圖為包含極性氮化鎵/氮化銦/極性氮化鎵異質接面的半導體元件的能帶圖，其中氮化銦的層厚為1.4奈米，第1B圖為包含極性氮化鎵/氮化銦/極性氮化鎵異質接面的半導體元件的能帶圖，其中氮化銦的層厚為2.4奈米。在第1A圖及第1B圖中，在極性p型氮化鎵/氮化銦界面的p型氮化鎵價帶邊緣(valence band；Ev)與在極性n型氮化鎵/氮化銦介面的n型氮化鎵導帶邊緣(conduction band；Ec)之間落差可視為有效能隙(effective band gap；Egeff)。如第1A圖所示，能隙為交錯式能隙(staggered-gap)且有效能隙約為0.64eV，且適合發生能帶間穿隧。如第1B圖所示，當氮化銦層的厚度增加到2.4奈米，能隙為斷帶能隙(broken gap)且有效能隙約為-0.37eV，且亦適合發生能帶間穿隧。接下來將討論到，這樣的性質(例如：在極性氮化鎵/氮化銦/極性氮化鎵異質接面中的氮化銦層的厚度可改變能隙特性)使 得多樣的穿隧式場效電晶體可被開發。舉例而言，具有交錯式能隙的極性氮化鎵/氮化銦/極性氮化鎵異質接面可導致低的關電流(off-current)，具有斷帶隙的極性氮化鎵/氮化銦/極性氮化鎵異質接面可導致高的開電流(on-current)。於部分實施方式中，當氮化銦層的厚度超過3奈米，因為穿隧距離的增加可能使得開電流可能無法滿足穿隧式場效電晶體使用。
此外，氮化鎵是六方(hexagonal)纖鋅礦(wurtzite)晶體結構中最穩定的，此結構是由兩個(或三個)基面(basal plane)相互旋轉120度(沿a軸)所構成，基面垂直於c軸，與c軸相交且垂直於c軸的面稱為c面(c-plane)，平行於c軸且與垂直於c面的面稱為m面(m-plane)，此外，纖鋅礦晶體結構更包含a面(a-plane)，在此處為與纖鋅礦晶體結構的(11-20)方向相交且垂直的(11-20)面。在此處，c面為通用術語，指的是包含(0001)面及(000-1)面的晶面族(family plane)，m面為通用術語，指的是包含(1-100)、(10-10)、(-1010)、(-1100)、(01-10)及(0-110)面的晶面族。
第三族原子與氮原子佔據沿晶體的c軸的交替的c面，纖鋅礦晶體結構中的對稱元素使三氮族具有沿著c軸的塊材自發極化(spontaneous polarization)，此外，纖鋅礦晶體結構是非中心對稱的，纖鋅礦氮化物可額外的呈現沿著晶體的c軸的壓電極化(piezoelectric polarization)。換句話說，三族氮化物材料的c面是極性 面，三族氮化物材料的m面和a面是非極性面，極性c面能引起能帶間穿隧，如第1A圖及第1B圖所述。然而，能帶間穿隧可能不在非極性面上發生。舉例而言，第1C圖為包含非極性氮化鎵/氮化銦/非極性氮化鎵異質接面的半導體元件的能帶圖。如第1C圖所示，非極性氮化鎵/氮化銦/非極性氮化鎵接面的大能隙導致大穿隧能障(tunneling barrier)(約為3.4eV)，阻礙透過非極性氮化鎵/氮化銦/非極性氮化鎵接面的能帶間穿隧。因此，本揭露的部分實施方式提供中心-殼層(core-shell)結構鰭片類型的穿隧式場效電晶體，其具有沿極性c面延伸的三族氮化物中心，而非沿非極性面，以提升主動區面積，亦提升穿隧式場效電晶體的元件表面。
第2圖為根據本揭露之部分實施方式之製造穿隧式場效電晶體的方法。第3、4A、5、6A及7-12圖根據第2圖的方法於部分實施方式中在不同階段所製造之穿隧式場效電晶體的剖面圖。第4B、4C、6B及6C圖為根據第2圖的方法於部分實施方式中在不同階段所製造之穿隧式場效電晶體的俯視圖。所繪示的圖僅為示例而並非用於限制本揭露，可以理解的是，額外的步驟可被提供於第2圖所示的步驟之前、之中或之後，下述的部分的步驟可以額外的製程被取代或省略，步驟/製程的順序可互相置換。
方法開始於步驟S1，第一摻雜的磊晶層形成於基材上。參照第3圖，於步驟S1的部分實施方式中，第一摻雜的磊晶層104及106形成於基材100上。如第3圖所示，第一摻雜的磊晶層104形成於基材100的第一區域10上，第一 摻雜的磊晶層106形成於基材100的第二區域12上，於部分實施方式中，第一區域10可用於形成p型元件，例如p型穿隧式場效電晶體，第二區域12可用於形成n型元件，例如n型穿隧式場效電晶體。
於部分實施方式中，基材100為單晶矽基材。此外，基材100可包含多層結構，例如具有埋入式氧化層於兩矽層之間的絕緣體上覆半導體基材(semiconductor-on-insulator；SOI)。基材100亦可由其他常見的材料所形成，例如藍寶石(sapphire)、矽鍺(SiGe)、碳化矽(SiC)、鍺(Ge)、氧化鋅(ZnO)、硒化鋅(ZnSe)、硫化鋅(ZnS)、磷化鎵(GaP)或砷化鎵(GaAs)。第3圖亦繪示可選擇的緩衝層102。於第3圖所示的實施方式中，緩衝層102形成於基板100上，接著形成第一摻雜的磊晶層104及106於緩衝層上。本揭露中的術語緩衝層102可被視為是選自三五族化合物半導體中的一層材料，例如：三族氮化物半導體(例如：氮化鋁)、金屬氮化物(metal nitride)、金屬碳化物(metal carbide)、金屬碳氮化物(metal carbon nitride)、純金屬、金屬合金、或含矽材料。緩衝層102可包含與其上方的三五族化合物半導體相同或相似的材料，接下來將被討論。於部分實施方式中，舉例而言，緩衝層102以物理氣相沉積(physical vapor deposition；PVD)或化學氣相沉積(chemical vapor deposition；CVD)所形成。
於部分實施方式中，第一摻雜的磊晶層104及 106以磊晶側向成長(epitaxial lateral overgrowth；ELOG)於緩衝層102上。舉例而言，第一摻雜的磊晶層104及106可在高於緩衝層102的形成溫度的溫度下所形成，因此，相較於緩衝層102的較為非晶(amorphous)結構能形成結晶結構(crystalline)結構，於部分實施方式中，第一摻雜的磊晶層104及106為選自包含氮化鎵(GaN)、氮化銦(InN)、氮化鋁(AlN)、氮化鎵銦(InxGa(1-x)N)、氮化鎵鋁(AlxGa(1-x)N)、氮化銦鋁(AlxIn(1-x)N)、氮化鎵銦鋁(AlxInyGa(1-x-y)N)或類似物的材料的三族氮化物半導體層，形成的方法包含金屬有機化學氣相沉積(metal organic CVD；MOCVD)(亦稱為金屬有機氣相磊晶(metal organic phase epitaxy))、電漿輔助化學氣相沉積(plasma enhanced CVD；PECVD)、遠距電漿輔助化學氣相沉積(remote plasma enhanced CVD；RP-CVD)及分子束磊晶(molecular beam epitaxy；MBE)。
於第一摻雜的磊晶層104及106是三族氮化物半導體層的部分實施方式中，第一摻雜的磊晶層104及106的成長方向可被設計為沿著非極性方向。因此，於部分實施方式中，三氮族半導體層104及106的成長方向可為(1-100)方向及(11-20)方向。第一摻雜物層104及106的成長方向和下方的基材100的晶向(crystal orientation)相關聯，因此，於部分實施方式中，當基材100是具有(112)晶面的矽基材(例如：基材100的頂面沿(112)延伸)，第一摻雜的磊晶層104及106具有(1-100)晶向，意即第一摻雜的磊晶層 104及106的頂面沿(1-100)面延伸。此外，於基材100是具有(110)晶面的矽基材的部分實施方式中，第一摻雜的磊晶層104及106具有(11-20)晶向，意即第一摻雜的磊晶層104及106沿(11-20)晶面延伸。
於用於p型穿隧式場效電晶體區域10的第一摻雜的磊晶層104是氮化鎵的部分實施方式中，氮化鎵層104是以n型摻雜物所摻雜，像是矽(silicon)、氧(oxygen)、或以上之組合，但本揭露不以此為限。於用於n型穿隧式場效電晶體區域12的第一摻雜的磊晶層106是氮化鎵的部分實施方式中，摻雜的氮化鎵層106是以p型摻雜物所摻雜，像是錳(magnesium)、鈣(calcium)、鋅(zinc)、鈹(beryllium)、碳(carbon)或以上之組合。因對第一氮化鎵層104及106的摻雜是執行於接下來將氮化鎵層104及106圖案化以及形成磊晶層之前，接下來形成的磊晶層能免於具有第一氮化鎵層104及106中的摻雜物。
回到第2圖，方法接著進行至步驟S2，第一摻雜的磊晶層被圖案化而形成鰭片。在塊狀氮化鎵被提供之後，選擇的部分被移除，以留下具有c面的長邊(例如：側壁)的鰭片，舉例而言，具有指定的尺寸(例如：形狀)的凹槽可被蝕刻入塊狀氮化鎵中，這樣的凹槽可用適合的光學微影技術(photolithography)或選擇性離子蝕刻(reactive ion etching)製程所形成。如第4A、4B及4C圖所示，殘留的n型氮化鎵層104與p型氮化鎵層106可分別包含n型鰭片1041及p型鰭片1061。n型鰭片1041與p型鰭片1061分別具 有沿纖鋅礦晶體結構的極性面(例如：c面，像是(0001)面及(000-1)面)延伸的長邊(例如：側壁)L1及L2，被持科的氮化鎵層104及106的水平部分1041及1062仍保持具有非極性面(例如：m面或a面)。於部分實施方式中，n型鰭片1041的長邊LS1沿不同的c面延伸。舉例而言，一長邊LS1沿(0001)面延伸，另一長邊LS1沿(000-1)面延伸。同樣地，p型鰭片1061的長邊LS2沿不同c面延伸，舉例而言，一長邊LS2沿(0001)面延伸，另一長邊LS2沿(000-1)面延伸。
此外，鰭片1041的短邊SS1與鰭片1061的短邊SS2沿非極性面延伸，例如a面(像是(11-20)面)或m面(像是(1-100)面)。於部分實施方式中，n型鰭片1041與p型鰭片1061的厚度與水平部分1042與1062的厚度足夠厚而使接下來形成的磊晶層具有低差排密度，舉例而言，低於108cm-2，因此有助於提升穿隧式場效電晶體元件的良率。
如第4A圖所示，於部分實施方式中，n型鰭片1041具有頂面TS1，水平部分1042具有頂面TS2。因n型鰭片1041的頂面TS1與水平部分1042的頂面TS2代表第一摻雜磊晶層104的成長方向，於第一摻雜磊晶層104的成長方向是(11-20)的部分實施方式中，第一摻雜的磊晶層104的n型鰭片1041的頂面TS1與水平部分1042的頂面TS2可具有(11-20)晶向。於第一摻雜的磊晶層104的成長方向是(1-100)的部分實施方式中，第一摻雜的磊晶層104的n型鰭片1041的頂面TS1與水平部分1042的頂面TS2可具有 (1-100)晶向，也就是說n型鰭片1041的頂面TS1及水平部分1042的頂面TS2沿(1-100)面延伸。因纖鋅礦晶體結構的特性，n型鰭片1042的短邊SS1與第一摻雜的來源層104的成長方向相關聯，於部分實施方式中，當第一摻雜的磊晶層104的成長方向為(11-20)方向時，短邊SS1具有(1-100)晶向。換句話說，當n型鰭片1041的頂面TS1沿A(11-20)延伸時，當n型鰭片1041的短邊SS1沿(1-100)延伸。於部分實施方式中，當第一摻雜的磊晶層104的成長方向為(1-100)方向時，短邊SS1具有(11-20)晶向。換句話說，當n型鰭片1041的頂面TS1具有(1-100)晶向時，n型鰭片1041的短邊SS1沿(11-20)面延伸。
因上述的n型鰭片1041的不同側/面的晶向，n型鰭片1041的長邊LS1為極性面，n型鰭片1041的短邊SS1和頂面TS1與水平部分1042的頂面TS2為非極性面。因此，能帶間穿隧可發生於n型鰭片1041的長邊而不發生於n型鰭片1042的短邊SS1與頂面TS1以及水平部分1042的頂面TS2。如此一來，n型鰭片1041的長邊LS1可做為允許能帶間穿隧的穿隧式場效電晶體的主動區，n型鰭片1041的短邊SS1及頂面TS1與水平部分1042的頂面TS2可做為穿隧能障，以提供絕緣。
於部分實施方式中，p型鰭片1061具有頂面TS3，水平部分1062具有頂面TS4，因p型鰭片1061的頂面TS3與水平部分1062的頂面TS4代表第一摻雜的磊晶層106的成長方向，於第一摻雜的磊晶層106的成長方向是 (11-20)方向的部分實施方式中，p型鰭片1061的頂面TS3與第一摻雜的磊晶層106的水平部分1062的頂面TS4可具有(11-20)晶向並因此沿(11-20)面延伸。於第一摻雜的磊晶層106的成長方向是(1-100)方向的部分實施方式中，第一摻雜的磊晶層106的p型鰭片1061的頂面TS3與水平部分1062的頂面TS4可具有(1-100)晶向並因此沿(1-100)面延伸。因為纖鋅礦晶體結構的特性，p型鰭片1061的短邊SS2與第一摻雜的磊晶層106的成長方向相關聯。於部分實施方式中，當第一摻雜的磊晶層106的成長方向是沿(11-20)方向，則短邊SS2具有(1-100)晶向或沿(1-100)晶向延伸。於部分實施方式中，當第一摻雜的磊晶層106的成長方向是(1-100)方向，短邊SS2可具有(11-20)晶向或沿(11-20)面延伸。
因上述的p型鰭片1061的不同側/面的晶向，p型鰭片1061的長邊LS2是極性面，p型鰭片1061的短邊SS2與頂面TS3與水平部分1062的頂面TS4是非極性面。因此，能帶間穿隧可發生於p型鰭片1061的長邊LS2而不發生於p型鰭片1061的短邊SS2與頂面TS3以及水平部分1062的頂面TS4。如此一來，p型鰭片1061的長邊LS2可做為允許能帶間穿隧的穿隧式場效電晶體的主動區，p型鰭片1061的短邊SS2及頂面TS3與水平部分1062的頂面TS4可做為穿隧能障，以提供絕緣。
回到第2圖，方法接著進行至步驟S3，中間層毯覆式地形成於基材上。參照第5圖，於步驟S3的部分實施 方式中，中間層108毯覆式地形成於基材100上以覆蓋n型鰭片1041、水平部分1042、p型鰭片1061及水平部分1062。於部分實施方式中，中間層108由不同於第一摻雜的磊晶層104及106的氮化鎵二元化合物的三族氮化物材料。舉例而言，中間層108是氮化鎵銦(InxGa1-xN)，x介於約0.1至約1之間。於部分實施方式中，中間層108為不具有鎵的氮化銦二元化合物。中間層108的組成或材料的不同導致其晶格常數與第一摻雜的磊晶層104及106的晶格常數不同，以產生應力(strain)於第一摻雜的磊晶層104及106中。施加於n型鰭片1041的長邊LS1及p型鰭片1061的長邊LS2的應力可導致壓電極化於長邊LS1及LS2，因此有益於能隙間穿隧。於部分實施方式中，中間層108非有意的摻雜，舉例而言，中間層108不具有有意摻雜的摻雜物而可具有來自製程污染的摻雜。舉例而言，中間層108免於具有第一摻雜的磊晶層104及106的摻雜物。於部分實施方式中，中間層108僅位於第一摻雜的磊晶層104及106之一者上。詳細而言，n型鰭片1041的一長邊LS1被中間層108覆蓋，另一長邊LS1免於被中間層108覆蓋。相似地，p型鰭片的一長邊LS2被中間層108覆蓋，另一長邊LS2免於被中間層108覆蓋。於部分實施方式中，中間層可由適合的沉積製程所形成，例如化學氣相沉積、低壓氣相沉積(low pressure CVD；LPCVD)、常壓化學氣相沉積(atmospheric pressure CVD；APCVD)、超高真空化學氣相沉積(ultrahigh vacuum CVD；UHVCVD)、原子層沉積(atomic layer deposition；ALD)、分子層沉積(molecular layer deposition；MLD)、電漿輔助化學氣相沉積(plasma enhanced CVD；PECVD)、金屬有機化學氣相沉積(metal-organic CVD；MOCVD)、分子束磊晶(molecular beam epitaxy；MBE)、濺鍍沉積(sputter deposition)、類似方法或以上之組合。於鰭片的僅一長邊被中間層108覆蓋的部分實施方式中，沉積中間層108之後接著進行蝕刻製程以移除鰭片的另一長邊的中間層108，適合的微影技術可被使用以幫助蝕刻製程。
因為鰭片1041與1061的材料(例如：氮化鎵)不同於中間層108的材料(例如：氮化銦)，n型鰭片1041與中間層108之間的界面與p型鰭片1061與中間層之間的界面可被視為是異質接面。於部分實施方式中，中間層108的厚度介於約1.4奈米至約2奈米之間。
回到第2圖，方法接著進行至步驟S4，第二摻雜的磊晶層被毯覆式地形成於基材上。參照第6A、6B及6C圖，於步驟S4的部分實施方式中，第二摻雜的磊晶層110被毯覆式地形成於基材100上以覆蓋p型穿隧式場效電晶體區域10與n型穿隧式場效電晶體12的中間層108上。第二摻雜的磊晶層110環繞n型鰭片1041的部分可被視為是殼層部分1101(在部分實施方式中亦被視為是半導體殼層)，第二摻雜的磊晶層110位於水平部分1042上方的部分可被視為是水平部分1102。相似地，第二摻雜的磊晶層110環繞p型鰭片1061的部分可被視為是殼層部分1121，第二摻雜的 磊晶層110位於水平部分1062上方的部分可被視為是水平部分1122。第二摻雜的磊晶層110及112為三族氮化物化合物半導體層，包含選自氮化鎵(GaN)、氮化銦(InN)、氮化鋁(AlN)、氮化鎵銦(InxGa(1-x)N)、氮化鎵鋁(AlxGa(1-x)N)、氮化銦鋁(AlxIn(1-x)N)、氮化鎵銦鋁(AlxInyGa(1-x-y)N)、類似物或以上之組合。舉例而言，第二摻雜的磊晶層110及112為氮化鎵二元化合物所形成，相同於第一摻雜的磊晶層104及106的材料。於部分實施方式中，第二摻雜的磊晶層110及112的厚度為約1奈米至約5奈米。舉例而言，三族氮化物化合物半導體層110及112的行程方法包含，金屬有機化學氣相沉積(MOCVD)、金屬有機氣相沉積(MOVPE)、電漿輔助化學氣相沉積(PECVD)、遠距電漿輔助化學氣相沉積(RPCVD)、分子束磊晶(MBE)、混合氣相沉積(hybrid vapor phase epitaxy；HVPE)。
於用於p型穿隧式場效電晶體區域10的第二磊晶層110是氮化鎵的部分實施方式中，摻雜的氮化鎵層110是以p型摻雜物摻雜，例如，錳(magnesium)、鈣(calcium)、鋅(zinc)、鈹(beryllium)、碳(carbon)及以上之組合，但本揭露不以此為限。於用於n型穿隧式場效電晶體區域12的第二摻雜的磊晶層112是氮化鎵的部分實施方式中，摻雜的氮化鎵層112是以n型摻雜物摻雜，例如，矽、氧、或以上之組合，但本揭露不以此為限。於p型穿隧式場效電晶體區域10中，n型摻雜的氮化鎵層104的鰭片1041類似中心部分(core)，本質(intrinsic)氮化銦層108 類似環繞中心部分的內殼層(inner shell)，p型摻雜的氮化鎵層110的殼層部分1101類似環繞內殼層的外殼層(outer shell)。n型摻雜的與p型摻雜的氮化鎵層104及110可分別被視為p型穿隧式場效電晶體的n型源極層與p型汲極層。於n型穿隧式場效電晶體區域12中，p型摻雜的氮化鎵層106的鰭片1061類似中心部分，本質氮化銦層108類似環繞中心部分的內殼層，n型摻雜的氮化鎵層112的殼層部分1121類似環繞內殼層的外殼層。p型摻雜的與n型摻雜的氮化鎵層106及112可分別被視為是n型穿隧式場效電晶體的p型源極層與n型與汲極層。
如第6A-6C圖所示，p型汲極層110的殼層部分1101具有頂面TS5、內長邊LS3與外長邊LS4、內短邊SS3與外短邊SS4，內短邊SS3與外短邊SS4短於內長邊LS3與外長邊LS4。p型汲極層110的水平部分1102具有頂面TS6。於部分實施方式中，因n型鰭片1041的長邊LS1的結晶方向，p型汲極層110的殼層部分1101的內長邊LS4與外長邊LS4沿c面((0001)面或(000-1))面延伸。舉例而言，p型汲極層110的相反側的內長邊LS3分別沿(0001)面及(000-1)面延伸。此外，殼層1101的頂面TS5及水平部分1102的頂面TS6的晶向與與第一摻雜的磊晶層104的成長方向相同。因此，當第一摻雜的磊晶層104的成長方向為(11-20)方向，殼層1101的頂面TS5與水平部分1102的頂面TS6具有(11-20)晶向或沿(11-20)面延伸。此外，當第一摻雜的磊晶層104的成長方向是(1-100)方向時，殼層1101的 頂面TS5與水平部分1102的頂面TS6具有(1-100)晶像且沿(1-100)面延伸。於殼層部分1101的頂面TS5具有(11-20)晶向的部分實施方式中，因為纖鋅礦晶體結構的特性，殼層部分1101的內短邊SS3及外短邊SS4具有(1-100)晶向且沿(1-100)面延伸。此外，於殼層1101的頂面TS5具有(1-100)晶向的部分實施方式中，殼層部分1101的內短邊SS3與外短邊SS4可具有(11-20)晶向或沿(11-20)面延伸。如上述的p型汲極層110的晶向，殼層1101的長邊LS3及短邊LS4沿極性面(0001)面及(000-1)面延伸，殼層1101的短邊SS3及SS4、以及頂面TS5與水平部分1102的頂面TS6沿非極性面((1-100)面或(11-20)面)延伸。
於磊晶層104、108及110分別是n型摻雜的氮化鎵、氮化銦及p型摻雜的氮化鎵的部分實施方式中，n型摻雜的氮化鎵層104的極性長邊LS1與氮化銦層108的內側邊形成異質接面，p型摻雜的氮化鎵層110的極性長邊LS3與氮化銦層108的外側邊形成另一異質接面。因此，極性氮化鎵/氮化銦/極性氮化鎵異質接面形成，而有助於建立氮化鎵層104及110的極性長邊LS1與LS3之間的能帶間穿隧，如第1A圖及第1B圖所示。氮化銦層108的厚度是挑選為可達到想要的穿隧式場效電晶體的能帶圖，如第1A圖及第1B圖的能帶圖所示。舉例而言，於氮化銦層108的厚度為約1.4奈米的部分實施方式中，可達到如第1A圖的能帶圖。此外，於氮化銦層108的厚度為約2.4奈米的部分實施方式中，可達到如第1B圖的能帶圖。於氮化銦層108的厚度增加至超過 3奈米時，因為穿隧距離增加，導致開電流不符合使用於穿隧場效電晶體。因此，於部分實施方式中，氮化銦層的厚度為約1奈米至約3奈米。
此外，n型摻雜的氮化鎵層104的非極性短邊SS1與氮化銦層108的內側邊形成異質接面，p型氮化鎵層110的非極性短邊SS3與氮化銦層108的外側邊形成另一異質接面。因此，非極性氮化鎵/氮化銦/非極性氮化鎵異質接面被形成，因此阻擋氮化鎵層104及110的非極性短邊SS1及SS3之間的能帶間穿隧，如第1C圖所示，因此可做為絕緣區域。相似地，n型氮化鎵層104的鰭片1041的非極性頂面TS1、下方的氮化銦層108以及p型氮化鎵層110形成非極性氮化鎵/氮化銦/非極性氮化鎵異質接面，因此形成絕緣區域。相似地，n型摻雜的氮化鎵層104的水平部分1042的非極性頂面TS2、下方的氮化銦層108及p型氮化鎵層110形成非極性氮化鎵/氮化銦/非極性氮化鎵異質接面，因此形成絕緣區域。舉例而言，非極性氮化鎵/氮化銦/非極性氮化鎵異質接面因為反向pn接面(reversed pn-junction)而可提供絕緣(可在氮化鎵/氮化銦/氮化鎵異質接面上使用摻雜、應變與逆向偏壓(reverse bias)來控制)。於部分實施方式中，n型汲極層112的殼層1121具有頂面TS7、內長邊LS5、外長邊LS6、內短邊SS5、外短邊SS6，內短邊SS5及外短邊SS6短於內長邊LS5及外長邊LS6，n型汲極層112的水平部分具有頂面TS8。於部分實施方式中，因為p型鰭片1061的長邊LS2的晶向，n型汲極層112的殼層1121的長邊LS5及 LS6沿c面((0001)面或(000-1)面)延伸。舉例而言，殼層1121的相對側的長邊LS5分別沿(0001)面及(000-1)面延伸。此外，殼層1121的頂面TS7與水平部分1122的頂面TS8的晶向與第一磊晶層106的成長方向相同，因此，當第一摻雜的磊晶層106的成長方向是(11-20)方向，殼層部分1121的頂面TS7與水平部分1122的頂面TS8亦具有(11-20)晶向且沿(11-20)面延伸。此外，當第一摻雜的磊晶層106的成長方向是(1-100)方向，殼層1121的頂面TS7與水平部分1122的頂面TS8亦具有(1-100)晶向或沿(1-100)晶面延伸。於殼層部分1121的頂面TS7具有(11-20)晶向的部分實施方式中，因纖鋅礦晶體結構的特性，殼層部分1121的短邊SS5及SS6可具有(1-100)晶向且沿(1-100)晶面延伸。此外，於殼層部分1121的頂面TS7具有(1-100)晶向的部分實施方式中，殼層部分1121的短邊SS5及SS6可具有(11-20)晶向或沿(11-20)晶面延伸。如上述的晶向，殼層部分1121的長邊LS5及LS6沿極性面((0001)面及(000-1)面)延伸，殼層部分1121的短邊SS5及SS6及頂面TS7與水平部分1122的頂面TS8沿非極性面((1-100)面或(11-20)面)延伸。
於層104、108及110分別是p型摻雜的氮化鎵、氮化銦及n型摻雜的氮化鎵的部分實施方式中，p型摻雜的氮化鎵層104的極性長邊LS2與氮化銦層108的內側邊形成異質接面，n型氮化鎵層110的極性長邊LS5與氮化銦層108的外側邊形成另一異質接面。因此，極性氮化鎵/氮 化銦/極性氮化鎵異質接面被形成，因此可建立氮化鎵層106及112的長邊LS2及LS5之間的能帶間穿隧，如第1A圖及第1B圖所示。氮化銦層108的厚度是選擇為可達到穿隧式場效電晶體的想要的能帶圖，例如如第1A圖及第1B圖所示的能帶圖。舉例而言，於氮化銦層108的厚度為約1.4奈米的部分實施方式中，可達到如第1A圖的能帶圖。此外，於氮化銦層108的厚度為約2.4奈米的部分實施方式中，可達到如第1B圖的能帶圖。於部分實施方式中，氮化銦層108的厚度為約1奈米至約3奈米。
此外，p型摻雜的氮化鎵層106的非極性短邊SS2與氮化銦層108的內側邊形成異質接面，n型摻雜的氮化鎵層112的非極性短邊SS5與氮化銦層108的外側邊形成另一異質接面。因此，非極性氮化鎵/氮化銦/非極性氮化鎵異質接面被形成，因此阻擋氮化鎵層106及112的非極性短邊SS2及SS5之間的能帶間穿隧，而可作為絕緣區域。相似地，p型摻雜的氮化鎵層的非極性頂面TS3及TS4與下方的氮化銦層108、以及n型摻雜的氮化鎵層112形成非極性氮化鎵/氮化銦/非極性氮化鎵異質接面，因此可作為絕緣區域。
回到第2圖，方法接著進行至步驟S5，高k介電層與閘極金屬層被形成於基材上。參照第7圖，於步驟S5的部分實施方式中，高k介電層114及116被形成於基材100上以分別覆蓋p型汲極層110與n型汲極層112。如第7圖所示，高k介電層114具有環繞p型汲極層110的殼層1101的殼層1141、以及具有覆蓋p型汲極層110的水平部分1102的水 平部分1142。高k介電層114及116可由原子層沉積、化學氣相沉積、金屬有機化學氣相沉積、物理氣相沉積、熱氧化或以上之組合所形成。舉例而言，高k介電層114及116可為二元或三元高k薄膜，例如二氧化鉿(HfO2)、二氧化鉻(ZrO2)、氧化鋁(Al2O3)、氧化鉿(HfO)、氧化鑭(LaO)、氧化鋁(AlO)、氧化鋯(ZrO)、氧化鈦(TiO)、氧化鉭(Ta2O5)氧化釔(Y2O3)、鈦酸鍶(STO)，鈦酸鋇(BTO)、鋯酸鋇(BaZrO)、氧化鋯鉿(HfZrO)、氧化鑭鉿(HfLaO)、氧化鉿鉭(HfTaO)、氧化鉿鈦(HfTiO)、類似物或以上之組合。於部分實施方式中，高k介電層114及116是由相同材料所形成。於其他實施方式中，高k介電層114及116是由不同材料所形成。於部分實施方式中，高k介電層114及116的厚度為約1奈米至約10奈米，舉例而言，為約2奈米。
閘極金屬層118及120形成於基材100上，如第8圖所示。於部分實施方式中，閘極金屬層118是毯覆式地形成於p型穿隧式場效電晶體區域10上的高k介電層上，閘極金屬層120是毯覆式地形成於n型穿隧式場效電晶體12上的高k介電層116上。閘極金屬層118及120可包含不同的功函數金屬以分別提供適合的功函數給p形及n型穿隧式場效電晶體。舉例而言，閘極金屬層118及120的材料包含鎢(tungsten)、鈦(titanium)、氮化物(nitride)、類似物或以上之組合。閘極金屬層118及120以原子層沉積、濺鍍或其他製程所沉積。於部分實施方式中，閘極金屬層118及120的厚度為約1奈米至約3奈米，例如為2奈米。
回到第2圖，方法接著進行至步驟S6，填充金屬層形成於基材上。參照第9圖，於步驟S6的部分實施方式中，填充金屬層122及124形成於基材100上。舉例而言，填充金屬層122及124可由鎢(W)、鈷(Co)、鋁(Al)、銅(Cu)、類似物或以上之組合所形成。於部分實施方式中，填充金屬層122及124是由相同材料所形成。或者，填充金屬層122及124是由不同材料所形成。然後，填充金屬層122及124被平坦化，例如以化學機械拋光(chemical mechanical polishing；CMP)直到p型汲極層110及n型汲極層112被露出，如第10圖所示。於部分實施方式中，化學機械平坦化製程導致填充金屬層122的頂面實質上齊平於閘極金屬層118、高k介電層114及p型汲極層110的頂面。相似地，化學機械平坦化製程導致填充金屬層124的頂面實質上齊平於閘極金屬層120、高k介電層116及n型汲極層112的頂面。
回到第2圖，方法接著進行至S7，開口形成於金屬填充層中。參照第11圖，於步驟S7的部分實施方式中，開口O1穿過金屬填充層110、閘極金屬層118、高k介電層114、p型汲極層110、中間層108與n型源極層104而形成。相似地，開口O2穿過金屬填充層124、閘極金屬層120、高k介電層116、p型汲極層110、中間層108及n型源極層104而形成。開口O1及O2可以適合的蝕刻技術所形成，例如濕式蝕刻、乾式蝕刻或以上之組合。於部分實施方式中，蝕刻製程可導致填充金屬層122及閘極金屬層118的頂面低於高 k閘極介電層114及p型汲極層110的頂面。相似地，蝕刻製程導致填充金屬層124及閘極金屬層120的頂面低於高k介電層116及n型汲極層112的頂面。
回到第2圖，方法接著進行至步驟S8，開口被以絕緣層過度填充(overfill)。參照第12圖，於步驟S8的實施方式中，開口O1及O2使用化學氣相沉積、物理氣相沉積、濺鍍、類似方法或以上之組合以絕緣層126過度填充。過度填充開口O1及O2導致填充金屬層122及124、閘極金屬層118及120、高k介電層114及116、p型汲極層110及n型汲極層112被絕緣層126覆蓋。
以絕緣層填充開口之後，進一步的穿隧式場效電晶體製程被執行以形成各種特徵，例如接觸/通孔、層間介電層、內連接金屬層或鈍化層等。
藉由上述討論，可看出本揭露提供許多優點。可以理解的是，其他實施方式亦可提供額外的優點，非全部的優點都被必須地於此揭露，非特定的優點於全部的實施方式都被需要。其中一個優點是極性氮化鎵/氮化銦/極性氮化鎵異質接面建立穿隧式場效電晶體的能帶間穿隧。另一個優點是提升的每一晶片面積的開電流可達到，因為穿隧式場效電晶體的鰭片(或中心部分)式設計為使極性側壁大於非極性側壁。另一個優點是穿隧式場效電晶體是放射狀運作(例如沿水平方向從內部氮化鎵的中心部分至外部的氮化鎵殼層)，只要氮化鎵的中心部分具有高的極化側壁，則可使主動區面積提升。另一個優點是從鰭片(或中心部分)的摻雜物 向外擴散至環繞的氮化銦及摻雜的氮化鎵殼層可被避免，因為氮化銦殼層與摻雜的氮化鎵殼層在藉由蝕刻摻雜的氮化鎵層以形成鰭片之後形成。另一優點是穿隧式場效電晶體的源極與汲極可由相同的三族氮化物半導體所形成，適合整合於互補式金屬氧化物半導體製程。
於部分實施方式中，一種穿隧式場效電晶體包含一第一源極/汲極層、一第二源極/汲極層以及一半導體中間層。第一源極/汲極層包含一第一極性側壁。第二源極/汲極層環繞第一源極/汲極層，其中第二源極/汲極層與第一源極/汲極層具相反導電類型。半導體中間層位於第二源極/汲極層與第一源極/汲極層的第一極性側壁之間。
於部分實施方式中，半導體中間層至少部分地環繞第一源極/汲極層。
於部分實施方式中，第二源極/汲極層包含一第二極性側壁，且半導體中間層位於第一源極/汲極層的第一極性側壁與第二源極/汲極層的第二極性側壁之間。
於部分實施方式中，第一源極/汲極層更包含被第二源極/汲極層環繞的一第一非極性側壁。
於部分實施方式中，第二源極/汲極層包含一第二非極性側壁，且半導體中間層更位於第一源極/汲極層的第一非極性側壁與第二源極/汲極層的第二非極性側壁之間。
於部分實施方式中，第一極性側壁的一面積大於第一非極性側壁的一面積。
於部分實施方式中，第一源極/汲極層的一頂面實質上垂直於第一源極/汲極層的第一非極性側壁且被第二源極/汲極層覆蓋。
於部分實施方式中，第一源極/汲極層與第二源極/汲極層包含相同的一三族氮化物材料。
於部分實施方式中，半導體中間層包含不同於第一源極/汲極層與第二源極/汲極層的一三族氮化物材料。
於部分實施方式中，穿隧式場效電晶體更包含一閘極金屬層與閘極介電層。閘極金屬層環繞第二源極/汲極層。閘極介電層位於閘極金屬層與第二源極/汲極層之間。
於部分實施方式中，一種穿隧式場效電晶體包含一半導體鰭片、一半導體中間層以及一半導體殼層。半導體鰭片包含一第一極性側壁與短於第一極性側壁的一第一非極性側壁。半導體中間層接觸半導體鰭片的第一極性側壁。半導體殼層位於半導體中間層周圍，其中半導體鰭片與半導體殼層具有相反導電類型。
於部分實施方式中，半導體鰭片的第一極性側壁沿半導體鰭片的一纖鋅礦晶體結構的一(0001)面或沿一(000-1)面延伸。
於部分實施方式中，穿隧式場效電晶體更包含一半導體基材。半導體基材位於半導體鰭片下方，其中半導體基材具有一頂面，頂面沿一(112)面或一(110)面延伸且實質上垂直於半導體鰭片的第一極性側壁。
於部分實施方式中，半導體殼層包含一第二極 性側壁與短於第二極性側壁的一第二非極性側壁，且半導體中間層接觸第二極性側壁。
於部分實施方式中，半導體中間層更接觸第二非極性側壁，第二極性側壁沿半導體殼層的一纖鋅礦晶體結構的一(0001)面或沿一(000-1)面延伸。
於部分實施方式中，半導體鰭片更包含一頂面，頂面沿半導體鰭片的一纖鋅礦晶體結構的一(11-20)面或沿一(1-100)面延伸。
於部分實施方式中，半導體中間層更接觸第一非極性側壁。
於部分實施方式中，一種形成穿隧式場效電晶體的方法包含形成一第一磊晶層於一基材上，第一磊晶層具有一第一摻雜物；蝕刻第一磊晶層，以形成具有一極性側壁的一鰭片；以及依序形成一半導體中間層與一第二磊晶層以環繞鰭片，其中第二磊晶層具有一第二摻雜物，第二摻雜物的導電類型不同於第一摻雜物的導電類型。
於部分實施方式中，形成第一磊晶層是執行以使得第一磊晶層的一頂面具有一(11-20)面或一(1-100)面。
以上概述數個實施方式或實施例的特徵，使所屬領域中具有通常知識者可以從各個方面更加瞭解本揭露。本技術領域中具有通常知識者應可理解，且可輕易地以本揭露為基礎來設計或修飾其他製程及結構，並以此達到相同的目的及/或達到在此介紹的實施方式或例子相同之優 點。本技術領域中具有通常知識者也應了解這些相等的結構並未悖離本揭露的揭露精神與範圍。在不悖離本揭露的揭露精神與範圍之前提下，可對本揭露進行各種改變、置換或修改。

Claims (1)

  1. 一種穿隧式場效電晶體，包含：一第一源極/汲極層，包含一第一極性側壁；一第二源極/汲極層，環繞該第一源極/汲極層，其中該第二源極/汲極層與該第一源極/汲極層具相反導電類型；以及一半導體中間層，位於該第二源極/汲極層與該第一源極/汲極層的該第一極性側壁之間。
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