TW201913844A - Alignment pattern setting method - Google Patents

Alignment pattern setting method Download PDF

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TW201913844A
TW201913844A TW107126863A TW107126863A TW201913844A TW 201913844 A TW201913844 A TW 201913844A TW 107126863 A TW107126863 A TW 107126863A TW 107126863 A TW107126863 A TW 107126863A TW 201913844 A TW201913844 A TW 201913844A
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alignment pattern
image
setting
wafer
area
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TW107126863A
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TWI791580B (en
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渡部晃司
宮田諭
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a configuration method of alignment pattern, which can suppress a decrease in alignment accuracy even if the alignment pattern does not include a feature portion. The configuration method of alignment pattern of the present invention includes: a photographing step for photographing the image of the intersection including scribe lines of the wafer; an assigning step for designating more than two areas containing boundaries between scribe lines and the dissimilar devices in the operation screen of including the image of the intersection; an overall picture producing step for producing the overall picture including all the assigned areas; a shielding step for shielding the areas other than the designated areas in the overall picture; a configuration step for configuring the overall picture after shielding as the alignment pattern; and a storing step for storing the distance between the alignment pattern and the center in the width direction of the scribe line.

Description

對準圖案的設定方法Setting method of alignment pattern

發明領域 本發明是關於一種對準圖案(alignment pattern)的設定方法,是在分割晶圓時,設定檢測加工位置時所使用之對準圖案。FIELD OF THE INVENTION The present invention relates to a method for setting an alignment pattern, which is used to set an alignment pattern used when detecting a processing position when dividing a wafer.

發明背景 將矽、藍寶石、鎵等作為母材之圓板狀的半導體晶圓或光器件晶圓等的晶圓,藉由正面的格子狀的分割預定線所區劃之複數個區域中,形成有器件。晶圓是藉由雷射加工裝置或切割裝置等的加工裝置,沿著分割預定線而被分割成一個個的器件(例如,參照專利文獻1)。BACKGROUND OF THE INVENTION Wafers such as silicon wafers, sapphire, gallium, and other wafer-like semiconductor wafers and optical device wafers are formed in a plurality of regions defined by a predetermined grid-like division line on the front side. Device. A wafer is a device that is divided into individual devices along a predetermined dividing line by a processing device such as a laser processing device or a dicing device (for example, refer to Patent Document 1).

專利文獻1等所示之加工裝置,是藉由全自動加工而分割前述之晶圓時,將預先設定之對準圖案,與拍攝了加工對象的晶圓之圖像,實施圖案匹配(pattern matching)等的圖像處理,而執行對於晶圓進行加工機構的位置整合之對準,並且執行判定加工機構所加工之加工位置是否適當之切口檢查(kerf check)。 先前技術文獻 專利文獻In the processing apparatus shown in Patent Document 1 and the like, when the aforementioned wafer is divided by full-automatic processing, pattern matching is performed with a preset alignment pattern and an image of the wafer on which the processing target is captured. ), Etc., perform alignment of the position integration of the processing mechanism for the wafer, and perform a kerf check to determine whether the processing position processed by the processing mechanism is appropriate. Prior Art Literature Patent Literature

專利文獻1:日本專利特開2014-203836號公報Patent Document 1: Japanese Patent Laid-Open No. 2014-203836

發明概要 發明欲解決之課題 為了執行前述之對準及切口檢查,專利文獻1等所示之加工裝置的加工對象的晶圓在每個器件上形成有對準圖案,並且為了避免被誤認為是其他部分,對準圖案較佳的是包含其他部分沒有之特徵部分。SUMMARY OF THE INVENTION Problems to be Solved by the Invention In order to perform the above-mentioned alignment and notch inspection, a wafer of a processing target shown in the processing apparatus shown in Patent Document 1 and the like has an alignment pattern formed on each device, and in order to avoid being mistaken for For other parts, it is preferable that the alignment pattern includes feature parts which are not present in other parts.

本發明是有鑑於此問題點而作成者,其目的在於提供一種對準圖案的設定方法,即使是對準圖案沒有包含特徵部分,也可抑制對準精度的降低。 用以解決課題之手段The present invention has been made in view of this problem, and an object thereof is to provide a method for setting an alignment pattern, which can suppress a decrease in alignment accuracy even if the alignment pattern does not include a characteristic portion. Means to solve the problem

為了解決上述課題並達成目的,本發明的對準圖案的設定方法,是將正面形成有藉由複數條切割道而被區劃成格子狀之器件之晶圓,沿著該切割道分割時,用以檢測該切割道的位置的對準圖案的設定方法,該對準圖案的設定方法之特徵在於具備:拍攝包含該切割道的交叉部之圖像之拍攝步驟;在顯示有包含該交叉部之圖像之裝置的操作畫面之中,指定至少2個以上包含該切割道與器件間的界線之區域之指定步驟;製作包含所有的指定區域之全體圖之全體圖製作步驟;在該全體圖中,將指定之區域以外進行遮蓋之遮蓋步驟;將被遮蓋之全體圖設定為對準圖案之設定步驟;及儲存該對準圖案的任一區域、與該切割道的寬度方向的中心間的距離之儲存步驟。In order to solve the above-mentioned problems and achieve the object, the method of setting the alignment pattern of the present invention is to form a wafer on the front surface of a device divided into a grid pattern by a plurality of scribe lines, and divide the wafer along the scribe lines using the scribe lines. A method of setting an alignment pattern to detect the position of the cutting path, the method of setting the alignment pattern is characterized by comprising: a photographing step of capturing an image of an intersection including the cutting path; In the operation screen of the image device, specify at least two or more designation steps that include the boundary between the scribe line and the device; create the overall drawing including the entire drawing of all the specified areas; in the overall drawing , The masking step of covering the area outside the designated area; the setting step of setting the entire figure to be masked as an alignment pattern; and the distance between any region storing the alignment pattern and the center of the width direction of the cutting path Of storage steps.

在前述對準圖案的設定方法中,其中該指定步驟也可將避開形成於該切割道之構件或是加工痕之位置,指定為該區域。In the aforementioned setting method of the alignment pattern, the designation step may also designate a position avoiding a member or a processing mark formed on the cutting path as the region.

在前述對準圖案的設定方法中,其中該指定步驟也可藉由描繪顯示有包含該交叉部之圖像之裝置的操作畫面,來指定該區域。 發明效果In the aforementioned setting method of the alignment pattern, the designation step may also designate the area by drawing an operation screen of a device displaying an image including the intersection portion. Invention effect

即使對準圖案不包含特徵部分,本發明的對準圖案的設定方法也可具有抑制對準精度的降低之效果。Even if the alignment pattern does not include a characteristic portion, the method for setting the alignment pattern of the present invention can have an effect of suppressing a decrease in alignment accuracy.

用以實施發明之形態 針對用於實施本發明之形態(實施形態),參照圖式並且詳細地進行說明。本發明並非因以下實施形態所記載之內容而受到限定的發明。又,在以下所記載之構成要件中,包含所屬技術領域中具有通常知識者可輕易設想得到的或實質上是相同的。此外,以下所記載之構成是可適當組合的。又,在不脫離本發明之要旨的範圍內,可進行各種構成之省略、置換或變更。Aspects for Implementing the Invention The aspects (embodiments) for implementing the invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below include those which can be easily conceived by persons having ordinary knowledge in the technical field to which they belong or are substantially the same. In addition, the structures described below can be appropriately combined. Moreover, various structures can be omitted, replaced, or changed without departing from the gist of the present invention.

[實施形態1] 依據圖式來說明本發明的實施形態1之對準圖案的設定方法。圖1是顯示實施實施形態1之對準圖案的設定方法的雷射加工裝置之構成例的立體圖。圖2是圖1所示之雷射加工裝置的加工對象之晶圓的立體圖。[Embodiment 1] A method of setting an alignment pattern according to Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing a configuration example of a laser processing apparatus for performing an alignment pattern setting method according to the first embodiment. FIG. 2 is a perspective view of a wafer to be processed by the laser processing apparatus shown in FIG. 1.

實施形態1之對準圖案的設定方法是半導體製程等所使用之加工裝置在分割圖1及圖2所示之晶圓100時所實施之方法。加工裝置是藉由雷射加工而分割晶圓100之圖1所示的雷射加工裝置1、或者是切割晶圓100以進行分割之切割裝置。The method of setting the alignment pattern in the first embodiment is a method performed when a processing device used in a semiconductor process or the like divides the wafer 100 shown in FIGS. 1 and 2. The processing device is a laser processing device 1 shown in FIG. 1 that divides the wafer 100 by laser processing, or a dicing device that cuts the wafer 100 for division.

晶圓100是以矽、藍寶石、鎵等為母材之圓板狀的半導體晶圓與光器件晶圓。如圖2所示,晶圓100在正面101形成有被複數條切割道102區劃成格子狀的器件103。又,晶圓100在切割道102上形成有構件,即TEG (Test Element Group,測試元件群)104。TEG104是由金屬等所形成,並且是用以發現器件103的設計、製造上的問題的測試圖案。TEG104配置在晶圓100的切割道102的預先設定之規定位置上。The wafer 100 is a disk-shaped semiconductor wafer and an optical device wafer using silicon, sapphire, gallium or the like as a base material. As shown in FIG. 2, a wafer 100 is formed on the front side 101 with a plurality of devices 103 divided into a grid pattern by a plurality of scribe lines 102. In addition, a component, ie, a TEG (Test Element Group) 104 is formed on the scribe line 102 of the wafer 100. The TEG 104 is formed of a metal or the like, and is a test pattern for discovering problems in the design and manufacturing of the device 103. The TEG 104 is arranged at a predetermined predetermined position of the scribe line 102 of the wafer 100.

又,在實施形態1中,雖然TEG104的配置位置與各個切割道102不同,但本發明之晶圓100也可具備與TEG104的配置位置相同之複數條切割道102。再者,圖2顯示了配置在部分的切割道102上之TEG104,省略了配置於其他切割道102上之TEG104。又,在實施形態1中,雖然晶圓100是在切割道102上形成構件,即TEG104,但本發明並不限定於TEG104,也可形成CMP (Chemical Mechanical Polishing,化學機械拋光)用的虛擬(dummy)圖案以作為構件。CMP的虛擬圖案是在CMP研磨時,為了均等地磨削晶圓100以抑制厚度的不一致,而在切割道102上形成圖案者,且圖案是由金屬、氧化膜或是樹脂等構成。又,在實施形態1中,晶圓100藉由將黏著膠帶110貼附在正面101的背面側的背面105上,並且將環狀框架111貼附在黏著膠帶110的外周上,而與環狀框架111成為一體。In the first embodiment, although the arrangement position of the TEG 104 is different from each of the scribe lines 102, the wafer 100 of the present invention may be provided with a plurality of scribe lines 102 that are the same as the arrangement position of the TEG 104. In addition, FIG. 2 shows the TEG 104 disposed on a part of the cutting track 102, and the TEG 104 disposed on the other cutting track 102 is omitted. In the first embodiment, although the wafer 100 is a member formed on the scribe line 102, that is, TEG104, the present invention is not limited to the TEG104, and a dummy (CMP) for CMP (Chemical Mechanical Polishing) dummy) pattern as a component. In the CMP virtual pattern, a pattern is formed on the scribe line 102 in order to grind the wafer 100 uniformly to suppress uneven thickness during CMP polishing, and the pattern is made of metal, oxide film, resin, or the like. Further, in Embodiment 1, the wafer 100 is bonded to the ring shape by attaching the adhesive tape 110 to the back surface 105 on the back side of the front surface 101, and attaching the ring frame 111 to the outer periphery of the adhesive tape 110. The frame 111 is integrated.

如圖1所示,作為加工裝置的一例的雷射加工裝置1,具備:工作夾台10,藉由保持面11而吸引保持晶圓100,並且藉由旋轉驅動源而可繞軸心旋轉;雷射光線照射單元20,將對於保持在工作夾台10上之晶圓100具有吸收性之波長的雷射光線,照射在晶圓100上;圖未示之X軸移動單元,使工作夾台10在X軸方向上移動;及圖未示之Y軸移動單元,使工作夾台10在Y軸方向上移動。又,雷射加工裝置1具備:載置收納雷射加工前後的晶圓100之匣盒30,並且使匣盒30在Z軸方向上昇降之匣盒昇降部40;在匣盒30與工作夾台10之間搬送晶圓100之圖未示之搬送單元;拍攝保持在工作夾台10之晶圓100之拍攝單元50;及控制各構成要件之電腦,即控制單元60。As shown in FIG. 1, a laser processing apparatus 1 as an example of a processing apparatus includes a work clamp table 10 that sucks and holds a wafer 100 by a holding surface 11 and is rotatable about an axis by a rotary driving source; The laser light irradiating unit 20 irradiates the laser light having a wavelength of absorptivity to the wafer 100 held on the work clamp table 10; the X-axis moving unit (not shown) makes the work clamp table 10 moves in the X-axis direction; and a Y-axis moving unit (not shown) moves the work clamp table 10 in the Y-axis direction. In addition, the laser processing apparatus 1 includes a cassette lifting portion 40 that mounts a cassette 30 that stores wafers 100 before and after laser processing, and raises and lowers the cassette 30 in the Z-axis direction; and a cassette 30 and a work clamp. A transfer unit (not shown) for transferring the wafer 100 between the tables 10; a photographing unit 50 for photographing the wafer 100 held on the work clamp table 10; and a computer that controls each constituent element, that is, a control unit 60.

雷射光線照射單元20具備加工頭21,前述加工頭21對保持在工作夾台10上的晶圓100相向,且照射雷射光線。拍攝單元50安裝在雷射光線照射單元20的加工頭21上。拍攝單元50具備將保持在工作夾台10之晶圓100的正面101進行攝影之CCD(Charge Coupled Device)拍攝元件等。拍攝單元50將拍攝而得之圖像輸出至控制單元60。The laser light irradiation unit 20 includes a processing head 21 that faces the wafer 100 held on the work table 10 and irradiates laser light. The imaging unit 50 is mounted on the processing head 21 of the laser light irradiation unit 20. The imaging unit 50 includes a CCD (Charge Coupled Device) imaging element or the like that images the front side 101 of the wafer 100 held on the work table 10. The shooting unit 50 outputs the captured image to the control unit 60.

控制單元60是分別控制雷射加工裝置1的上述之構成要件,並使雷射加工裝置1實施對晶圓100之加工動作的單元。再者,控制單元60是電腦。控制單元60具有運算處理裝置、儲存裝置及輸入輸出介面裝置,該運算處理裝置具有如CPU(central processing unit,中央處理單元,)的微處理器,該儲存裝置具有如ROM(read only memory,唯讀記憶體)或RAM(random access memory,隨機存取記憶體)之記憶體。The control unit 60 is a unit that individually controls the above-mentioned constituent elements of the laser processing apparatus 1 and causes the laser processing apparatus 1 to perform a processing operation on the wafer 100. The control unit 60 is a computer. The control unit 60 includes an arithmetic processing device, a storage device, and an input-output interface device. The arithmetic processing device has a microprocessor such as a CPU (central processing unit, central processing unit). The storage device includes a ROM (read only memory, only Read memory) or RAM (random access memory, random access memory) memory.

控制單元60的運算處理裝置是依照儲存於儲存裝置中之電腦程式實施運算處理,並將用於控制雷射加工裝置1的控制訊號透過輸入輸出介面裝置輸出至雷射加工裝置1的上述之構成要件。又,控制單元60是與顯示單元70及輸入單元80相連接,前述顯示單元70是顯示加工動作的狀態或圖像等,前述輸入單元80是在操作人員登錄加工內容資訊等之時使用。The arithmetic processing device of the control unit 60 performs arithmetic processing according to a computer program stored in a storage device, and outputs a control signal for controlling the laser processing device 1 to the laser processing device 1 through the input / output interface device. Requirements. The control unit 60 is connected to a display unit 70 and an input unit 80. The display unit 70 displays a state or image of a processing operation, and the input unit 80 is used when an operator registers processing content information and the like.

顯示單元70包含液晶顯示器(liquid crystal display)、有機EL顯示器(organic electro-luminescence display),或者是無機EL顯示器(Inorganic electro-luminescence display)等的顯示器件。顯示器件的畫面71即為操作畫面。顯示單元70將文字、圖像、記號及圖形等顯示於畫面內。又,顯示單元70顯示拍攝單元50拍攝而得之圖像。The display unit 70 includes display devices such as a liquid crystal display, an organic EL display (organic electro-luminescence display), or an inorganic EL display (Inorganic electro-luminescence display). The screen 71 of the display device is an operation screen. The display unit 70 displays characters, images, symbols, graphics, and the like on the screen. In addition, the display unit 70 displays an image obtained by the imaging unit 50.

輸入單元80具備重疊在構成顯示單元70之顯示器件的畫面71上之觸控面板81,及鍵盤等的圖未示之外部輸入裝置。觸控面板81檢測手指、筆,或是觸控筆等的接觸或接近。觸控面板81可檢測複數個手指、筆或是觸控筆等接觸或是接近時的觸控面板81上的位置。在以下的說明中,將觸控面板81所檢測之複數個手指、筆及觸控筆等接觸或接近時之位置,表示為「檢測位置」。輸入單元80將手指等的接觸或接近及檢測位置輸出至控制單元60。The input unit 80 includes a touch panel 81 superimposed on a screen 71 of a display device constituting the display unit 70, and an external input device (not shown) such as a keyboard. The touch panel 81 detects contact or proximity of a finger, a pen, or a stylus. The touch panel 81 can detect positions on the touch panel 81 when a plurality of fingers, pens, or styluses are in contact or approached. In the following description, the positions when a plurality of fingers, pens, stylus pens, and the like detected by the touch panel 81 are in contact or approached are referred to as "detection positions". The input unit 80 outputs a contact or proximity and detection position of a finger or the like to the control unit 60.

雷射加工裝置1從雷射光線照射單元20的加工頭21照射雷射光線於晶圓100上,並且藉由X軸移動單元、旋轉驅動源及Y軸移動單元,而使工作夾台10與加工頭21沿著切割道102進行相對地移動並實施燒蝕加工,以在切割道102上形成雷射加工溝。在實施形態1中,將藉由雷射加工裝置1而在切割道102上形成有雷射加工溝之晶圓100,沿著雷射加工溝被切斷等,而分割成一個個的器件103。The laser processing apparatus 1 irradiates laser light on the wafer 100 from the processing head 21 of the laser light irradiation unit 20, and uses the X-axis moving unit, the rotation driving source, and the Y-axis moving unit to make the work clamp table 10 and The processing head 21 relatively moves along the cutting path 102 and performs ablation processing to form a laser processing groove on the cutting path 102. In Embodiment 1, the wafer 100 in which a laser processing groove is formed on the dicing path 102 by the laser processing device 1 is cut along the laser processing groove, and the like is divided into individual devices 103. .

又,在雷射加工裝置1中,控制單元60將拍攝單元50拍攝而得之圖像輸出至顯示單元70,並且顯示於顯示單元70上。在晶圓100的雷射加工前,控制單元60執行使晶圓100與加工頭21進行對位之對準,並且在晶圓100的雷射加工中執行切口檢查,前述切口檢查是用以判定是否可容許實際形成於切割道102之雷射加工溝的位置,及形成於雷射加工溝的寬度方向的兩側緣之碎片的大小。雷射加工裝置1在執行對準時,使控制單元60將預先儲存於儲存裝置之對準圖案200與拍攝單元50拍攝而得之圖像,實施圖案匹配等的圖像處理。In the laser processing device 1, the control unit 60 outputs an image obtained by the imaging unit 50 to the display unit 70 and displays the image on the display unit 70. Before laser processing of the wafer 100, the control unit 60 performs alignment of the wafer 100 and the processing head 21, and performs a notch inspection during the laser processing of the wafer 100. The aforementioned notch inspection is used to determine Whether the positions of the laser processing grooves actually formed on the cutting track 102 and the sizes of the fragments formed on both sides of the laser processing grooves in the width direction are allowed. When the laser processing device 1 performs the alignment, the control unit 60 causes the control unit 60 to perform image processing such as pattern matching on an image obtained by photographing the alignment pattern 200 and the imaging unit 50 stored in the storage device in advance.

接著,說明實施形態1之對準圖案的設定方法。圖3是顯示實施形態1之對準圖案的設定方法的流程之流程圖。圖4是顯示圖3所示之對準圖案的設定方法的拍攝步驟中所得到之圖像的一例之圖式。圖5是顯示在圖4所示之圖像中,實施圖3所示之對準圖案的設定方法的指定步驟之一例之圖式。圖6是將圖5所示之圖像的主要部分放大顯示之圖式。圖7是顯示在圖5所示之圖像中,實施圖3所示之對準圖案的設定方法的全體圖製作步驟之一例之圖式。圖8是顯示在圖7所示之圖像中,實施圖3所示之對準圖案的設定方法的遮蓋步驟之一例之圖式。圖9是顯示在對準圖案的設定方法的儲存步驟中所儲存之對準圖案與切割道間的距離等的一例之圖式。Next, a method of setting the alignment pattern in the first embodiment will be described. 3 is a flowchart showing a flow of a method of setting an alignment pattern in the first embodiment. FIG. 4 is a diagram showing an example of an image obtained in a photographing step of the setting method of the alignment pattern shown in FIG. 3. FIG. 5 is a diagram showing an example of designation steps for implementing the setting method of the alignment pattern shown in FIG. 3 in the image shown in FIG. 4. FIG. 6 is an enlarged view of a main part of the image shown in FIG. 5. FIG. 7 is a diagram showing an example of a whole drawing creation process for implementing the method of setting the alignment pattern shown in FIG. 3 in the image shown in FIG. 5. FIG. 8 is a diagram showing an example of a masking step for implementing the method of setting the alignment pattern shown in FIG. 3 in the image shown in FIG. 7. FIG. 9 is a diagram showing an example of the distance between the alignment pattern and the scribe line, etc., stored in the storing step of the alignment pattern setting method.

實施形態1之對準圖案的設定方法(以下,簡稱為設定方法),是在晶圓100的切割道102上形成雷射加工溝,並且將晶圓100沿著切割道102而分割成一個個的器件103時,設定用以檢測切割道102的位置的對準圖案200之方法。對準圖案200是一種當雷射加工裝置1的控制單元60檢測在切割道102上加工雷射加工溝之位置(座標資訊)(亦即,執行對準)時所使用的圖案匹配之圖像資訊,且是藉由實施形態1之設定方法而設定,並儲存在儲存裝置中。再者,在實施形態1中,位置(座標資訊)顯示了從晶圓100的預先設定之基準位置的X軸方向及Y軸方向的座標。The alignment pattern setting method (hereinafter, simply referred to as a setting method) of Embodiment 1 is to form a laser processing groove on the scribe line 102 of the wafer 100, and divide the wafer 100 into individual pieces along the scribe line 102. In the case of the device 103, the method of setting the alignment pattern 200 for detecting the position of the dicing track 102 is set. The alignment pattern 200 is an image of pattern matching used when the control unit 60 of the laser processing apparatus 1 detects the position (coordinate information) of the laser processing groove on the cutting path 102 (that is, performs alignment). The information is set by the setting method of the first embodiment and stored in the storage device. In the first embodiment, the position (coordinate information) shows the coordinates in the X-axis direction and the Y-axis direction from a predetermined reference position of the wafer 100.

設定方法是首先操作員將收納與環狀框架111成為一體之晶圓100之匣盒30,載置於雷射加工裝置1的匣盒昇降部40上,然後,操作員操作輸入單元80,而將執行對準時拍攝單元50拍攝之晶圓100的正面101的位置登錄於控制單元60。再者,在實施形態1中,執行對準時拍攝之晶圓100的正面101的位置,是可拍攝各個切割道102交叉之交叉部106(如圖2所示)之位置。如圖3所示,設定方法具備拍攝步驟ST1、指定步驟ST2、全體圖製作步驟ST3、遮蓋步驟ST4、設定步驟ST5及儲存步驟ST6。The setting method is that the operator first puts the cassette 30 containing the wafer 100 integrated with the ring frame 111 on the cassette lifting portion 40 of the laser processing apparatus 1, and then the operator operates the input unit 80, and The position of the front side 101 of the wafer 100 photographed by the imaging unit 50 when the alignment is performed is registered in the control unit 60. Furthermore, in Embodiment 1, the position of the front side 101 of the wafer 100 photographed when the alignment is performed is a position where the intersection 106 (shown in FIG. 2) where each of the scribe lines 102 intersect can be photographed. As shown in FIG. 3, the setting method includes a photographing step ST1, a designation step ST2, a whole map creation step ST3, a masking step ST4, a setting step ST5, and a storing step ST6.

拍攝步驟ST1是拍攝包含晶圓100的切割道102的交叉部106之圖像300(如圖4所示)之步驟。在拍攝步驟ST1中,當操作員操作輸入單元80,並輸入對準圖案200的設定開始指示時,控制單元60在搬送單元中從匣盒30取出1片雷射加工前的晶圓100,並且載置於工作夾台10的保持面11上,而使晶圓100被吸引保持在工作夾台10的保持面11上。The photographing step ST1 is a step of photographing an image 300 (shown in FIG. 4) including the intersection 106 of the scribe lines 102 of the wafer 100. In the shooting step ST1, when the operator operates the input unit 80 and inputs the setting start instruction of the alignment pattern 200, the control unit 60 takes out one wafer 100 before laser processing from the cassette 30 in the transport unit, and The wafer 100 is placed on the holding surface 11 of the work table 10, and the wafer 100 is attracted and held on the holding surface 11 of the work table 10.

接著,控制單元60藉由X軸移動單元而使工作夾台10朝向雷射光線照射單元20的加工頭21的下方移動,並且使工作夾台10配置在安裝於加工頭21之拍攝單元50的下方且執行保持於工作夾台10之晶圓100的對準時所進行拍攝之位置上,使拍攝單元50拍攝晶圓100的正面101。如圖4所示,控制單元60將圖像300顯示於顯示單元70的操作畫面,即畫面71上,該圖像300包含拍攝單元50拍攝而得之晶圓100的正面101的切割道102的交叉部106。再者,由於圖像300是拍攝單元50拍攝而得之圖像,因此是以規定的灰階而顯示有光的強弱之圖像,亦即為具有濃淡之圖像。設定方法是當圖像300顯示於顯示單元70的畫面71時,則進入指定步驟ST2。Next, the control unit 60 moves the work clamp table 10 toward the processing head 21 of the laser light irradiation unit 20 by the X-axis moving unit, and arranges the work clamp table 10 on the imaging unit 50 mounted on the processing head 21. The photographing unit 50 photographs the front side 101 of the wafer 100 at a position where the photographing is performed when the wafer 100 held on the work clamp table 10 is aligned downward. As shown in FIG. 4, the control unit 60 displays an image 300 on the operation screen of the display unit 70, that is, on the screen 71. The image 300 includes the cutting path 102 of the front surface 101 of the wafer 100 obtained by the imaging unit 50. Intersection section 106. Furthermore, since the image 300 is an image captured by the imaging unit 50, the image with light intensity displayed in a predetermined gray scale, that is, an image with light and shade. The setting method is that when the image 300 is displayed on the screen 71 of the display unit 70, the process proceeds to a designation step ST2.

指定步驟ST2是在顯示有包含交叉部106之圖像300之裝置中,即顯示單元70的畫面71中,指定至少2個以上之區域400之步驟,區域400包含切割道102與相異器件103間的界線。實施形態中,在指定步驟ST2,操作員在顯示於顯示單元70的畫面71之圖像300中,使觸控筆90接觸並在區域400的外緣上移動,藉由觸控筆90進行描繪,前述區域400是包含切割道102與各器件103間之界線,且圍繞避開配置於切割道102之TEG104之位置。The designation step ST2 is a step of designating at least two or more regions 400 in the device 71 displaying the image 300 including the intersection 106, that is, the screen 71 of the display unit 70. The region 400 includes the cutting path 102 and the alien device 103. Boundary line. In the embodiment, in the designation step ST2, the operator touches the stylus pen 90 on the image 300 displayed on the screen 71 of the display unit 70, moves the stylus pen 90 on the outer edge of the area 400, and draws with the stylus pen 90. The aforementioned area 400 includes a boundary between the dicing track 102 and each device 103 and surrounds a position that avoids the TEG 104 disposed on the dicing track 102.

在指定步驟ST2中,控制單元60從輸入單元80的觸控面板81的觸控筆90的檢測位置,來檢測觸控筆90在畫面71上移動之軌跡,以作為區域400的外緣的位置,並且儲存於儲存裝置中。再者,雖然在實施形態1中,指定步驟ST2中是以觸控筆90進行描繪,但本發明不限定於觸控筆90,也可以手指或是筆等來描繪。In the designation step ST2, the control unit 60 detects the trajectory of the stylus pen 90 on the screen 71 from the detection position of the stylus pen 90 of the touch panel 81 of the input unit 80 as the position of the outer edge of the area 400 And stored on a storage device. In the first embodiment, the stylus 90 is used for drawing in the designation step ST2. However, the present invention is not limited to the stylus 90, and may be drawn with a finger or a pen.

再者,當控制單元60檢測並儲存區域400的外緣的位置時,輸入單元80的觸控面板81以顯示單元70的畫面71的像素(pixel)單位來檢測觸控筆90的位置,並將觸控面板81的觸控筆90的檢測位置的畫素數值化,例如為「1」,且將檢測位置以外之畫素數值化,例如為「0」。控制單元60從前述數值化之像素的位置,及在執行登錄後之對準時,拍攝單元50所拍攝之晶圓100的正面101的位置等,來計算區域400的外緣的位置,並且指定為區域400。又,在指定步驟ST2中,如圖5所示,控制單元60在顯示單元70的畫面71中,顯示所指定之區域400。又,實施形態1中,在指定步驟ST2雖然指定了4個區域400,但本發明並不限定於4個,只要指定2個以上的區域400即可。Furthermore, when the control unit 60 detects and stores the position of the outer edge of the area 400, the touch panel 81 of the input unit 80 detects the position of the touch pen 90 in pixel units of the screen 71 of the display unit 70, and The pixel at the detection position of the touch pen 90 of the touch panel 81 is digitized, for example, is "1", and the pixels at the positions other than the detection position are digitized, for example, "0". The control unit 60 calculates the position of the outer edge of the area 400 from the position of the aforementioned numerical pixel and the position of the front side 101 of the wafer 100 photographed by the imaging unit 50 when performing the registration after registration, and designates it as Area 400. In the designation step ST2, as shown in FIG. 5, the control unit 60 displays the designated area 400 on the screen 71 of the display unit 70. In the first embodiment, although four areas 400 are specified in the designation step ST2, the present invention is not limited to four, as long as two or more areas 400 are specified.

再者,若區域400的外緣如圖6所示地而斷開,如圖6中的虛線所示,控制單元60將斷開的兩端401、402之間以通過最短的線來連結,來計算區域400的外緣的位置。如此,在指定步驟ST2中,操作員將包含顯示於顯示單元70的畫面71之圖像300的切割道102與器件103間的界線且避開配置於切割道102之TEG104的位置,指定為區域400,並至少指定2個以上之區域400。又,在指定步驟ST2中,操作員藉由觸控筆90描繪顯示有顯示單元70的圖像300之畫面71,來指定區域400。設定方法是當操作員操作輸入單元80,而輸入區域400的指定已結束之指令時,則進入全體圖製作步驟ST3。Furthermore, if the outer edge of the area 400 is disconnected as shown in FIG. 6, as shown by the dotted line in FIG. 6, the control unit 60 connects the disconnected ends 401 and 402 with the shortest line, The position of the outer edge of the area 400 is calculated. In this way, in the designation step ST2, the operator designates a region including the cut line 102 and the device 103 of the image 300 displayed on the screen 71 of the display unit 70 and avoids the position of the TEG 104 disposed on the cut line 102, and designates it as an area. 400, and specify at least two areas 400. In the designation step ST2, the operator designates the area 400 by drawing the screen 71 of the image 300 on which the display unit 70 is displayed with the stylus 90. The setting method is that when the operator operates the input unit 80 and the designation of the input area 400 has ended, the process proceeds to the whole map creation step ST3.

全體圖製作步驟ST3是製作包含指定步驟ST2所指定之所有的區域400之全體圖500的步驟。在全體圖製作步驟ST3中,控制單元60計算在指定之各區域400的X軸方向及Y軸方向各自的座標中最大的座標與最小的座標。控制單元60計算在所有的區域400的X軸方向的複數個最大座標中的最大X軸方向座標501,及複數個最小座標中的最小X軸方向座標502,並且計算在所有的區域400的Y軸方向的複數個最大座標中的最大Y軸方向座標503,及複數個最小座標中的最小Y軸方向座標504。The whole map creation step ST3 is a step of creating a whole map 500 including all the areas 400 specified by the designation step ST2. In the whole map creation step ST3, the control unit 60 calculates the largest coordinate and the smallest coordinate among the respective coordinates of the X-axis direction and the Y-axis direction of each designated area 400. The control unit 60 calculates a maximum X-axis direction coordinate 501 of the plurality of maximum coordinates in the X-axis direction of all the regions 400 and a minimum X-axis direction coordinate 502 of the plurality of minimum coordinates, and calculates Y for all the regions 400 The largest Y-axis direction coordinate 503 of the plurality of largest coordinates in the axial direction, and the smallest Y-axis direction coordinate 504 of the plurality of smallest coordinates.

控制單元60將最大X軸方向座標501、最小X軸方向座標502、最大Y軸方向座標503與最小Y軸方向座標504所圍繞之區域,製作成全體圖500。在全體圖製作步驟ST3中,如圖7所示,控制單元60將全體圖500顯示於顯示單元70的畫面71上。設定方法是當控制單元60製作全體圖500時,則進入遮蓋步驟ST4。The control unit 60 prepares an area surrounded by the maximum X-axis direction coordinate 501, the minimum X-axis direction coordinate 502, the maximum Y-axis direction coordinate 503, and the minimum Y-axis direction coordinate 504 into an overall map 500. In the whole map creation step ST3, as shown in FIG. 7, the control unit 60 displays the whole map 500 on the screen 71 of the display unit 70. The setting method is that when the control unit 60 creates the whole map 500, the process proceeds to the masking step ST4.

遮蓋步驟ST4是在全體圖500中,遮蓋指定之區域400以外的步驟。在遮蓋步驟ST4中,控制單元60將顯示於顯示單元70之全體圖500中的所有的區域400的外側,如圖8之網格所示,進行變黑之圖像處理,而形成遮罩510。亦即,在遮蓋步驟ST4中,控制單元60將全體圖500中的所有的區域400的外側,形成為遮罩510。再者,本發明在遮蓋步驟ST4中,控制單元60也可將顯示於顯示單元70之全體圖500中的所有的區域400的外側,進行變白之圖像處理,而形成遮罩510。設定方法是當控制單元60形成遮罩510時,則進入設定步驟ST5。The masking step ST4 is a step of masking the area other than the designated area 400 in the overall view 500. In the masking step ST4, the control unit 60 displays the outside of all the regions 400 in the entire map 500 of the display unit 70, as shown in the grid of FIG. 8, and performs blackened image processing to form a mask 510. . That is, in the masking step ST4, the control unit 60 forms the outer side of all the regions 400 in the overall view 500 as a mask 510. Furthermore, in the masking step ST4 of the present invention, the control unit 60 may perform whitening image processing on the outside of all the regions 400 in the entire map 500 of the display unit 70 to form a mask 510. The setting method is that when the control unit 60 forms the mask 510, the process proceeds to a setting step ST5.

設定步驟ST5是將形成有遮罩510之全體圖500,設定為對準圖案200的步驟。在設定步驟ST5中,控制單元60將包含以規定灰階的光的強弱所顯示之各區域400與遮罩510之全體圖500,設定為對準圖案200,並儲存於儲存裝置中。設定方法是當控制單元60儲存對準圖案200時,則進入儲存步驟ST6。The setting step ST5 is a step of setting the entire map 500 on which the mask 510 is formed as the alignment pattern 200. In the setting step ST5, the control unit 60 sets the entire map 500 including the area 400 and the mask 510 displayed with the intensity of light of a predetermined gray scale as the alignment pattern 200, and stores it in the storage device. The setting method is that when the control unit 60 stores the alignment pattern 200, the process proceeds to the storing step ST6.

儲存步驟ST6是儲存對準圖案200的任一區域400及與切割道102的寬度方向的中心107間的距離201(如圖9所示)之步驟。再者,本發明在儲存步驟ST6中,也可儲存任一區域400與切割道102的端部之間的距離,簡而言之,可儲存任一區域400與切割道102的任意位置間的距離。在儲存步驟ST6中,操作員操作輸入單元80,並且輸入對準圖案200的複數個區域400中的任一者與切割道102的寬度方向的中心107間的距離201,且控制單元60將輸入之距離201儲存於儲存裝置,並如圖9所示,在顯示單元70的畫面71上顯示切割道102的中心107。設定方法是當控制單元60儲存距離201時則結束。The storing step ST6 is a step of storing a distance 201 (as shown in FIG. 9) between any area 400 of the alignment pattern 200 and the center 107 in the width direction of the cutting track 102. Furthermore, in the storage step ST6 of the present invention, the distance between any area 400 and the end of the cutting track 102 can also be stored. In short, the distance between any area 400 and any position of the cutting track 102 can be stored. distance. In the storing step ST6, the operator operates the input unit 80 and inputs the distance 201 between any one of the plurality of regions 400 of the alignment pattern 200 and the center 107 in the width direction of the cutting path 102, and the control unit 60 inputs The distance 201 is stored in the storage device, and as shown in FIG. 9, the center 107 of the cutting track 102 is displayed on the screen 71 of the display unit 70. The setting method is ended when the control unit 60 stores the distance 201.

如上所述,設定有對準圖案200之雷射加工裝置1的控制單元60,在執行對準時,使拍攝單元50拍攝在晶圓100的正面101中的預先登錄之對準執行時所拍攝的位置。控制單元60在執行對準時,在拍攝單元50所拍攝而得之圖像、及對準圖案200的區域400的圖像,實施圖案匹配等的圖像處理。控制單元60基於圖像處理的結果,從拍攝單元50拍攝而得之圖像等,來算出切割道102的位置。As described above, the control unit 60 of the laser processing apparatus 1 with the alignment pattern 200 set causes the imaging unit 50 to take an image of the pre-registered imaging performed on the front side 101 of the wafer 100 when the alignment is performed. position. When the control unit 60 performs the alignment, the image obtained by the imaging unit 50 and the image of the area 400 of the alignment pattern 200 are subjected to image processing such as pattern matching. The control unit 60 calculates the position of the cutting track 102 based on the result of the image processing, from an image obtained by the imaging unit 50 and the like.

控制單元60使工作夾台10繞著軸心旋轉,而使互相正交之切割道102中的一者與X軸方向平行,並且使晶圓100與雷射光線照射單元20的加工頭21進行對位,而使雷射光線從區域400照射在成為儲存步驟ST6所儲存之距離201之位置上。然後,控制單元60令旋轉驅動源將晶圓100繞著軸心旋轉90度,且使互相正交之切割道102中的另一者的對準與其中一者同樣地被執行。然後,控制單元60根據加工條件,並藉由X軸移動單元、Y軸移動單元與旋轉驅動源,使雷射光線照射單元20的加工頭21與晶圓100沿著切割道102進行相對地移動,而在切割道102上形成雷射加工溝。The control unit 60 rotates the work table 10 about the axis, makes one of the mutually orthogonal cutting paths 102 parallel to the X-axis direction, and causes the wafer 100 and the processing head 21 of the laser light irradiation unit 20 to perform The laser beam is aligned so that the laser light is irradiated from the area 400 to the position of the distance 201 stored in the storing step ST6. Then, the control unit 60 causes the rotary driving source to rotate the wafer 100 by 90 degrees around the axis, and performs alignment of the other of the mutually orthogonal dicing tracks 102 in the same manner as one of them. Then, the control unit 60 relatively moves the processing head 21 and the wafer 100 of the laser light irradiation unit 20 along the dicing path 102 by using the X-axis moving unit, the Y-axis moving unit, and the rotation driving source according to the processing conditions. A laser processing groove is formed on the cutting track 102.

在實施形態1之設定方法是在指定步驟ST2中指定4個包含切割道102與相異器件103間的界線之區域400。因此,設定方法會將包含複數條切割道102與器件103間的界線之區域400,包含在對準圖案200中。其結果為,由於設定方法可使用複數個包含複數條切割道102與器件103間的界線之區域400來進行對準,因此即使區域400,即對準圖案200不包含特徵部分,也可抑制對準精度的降低。In the setting method of the first embodiment, in the designation step ST2, four areas 400 including a boundary line between the scribe line 102 and the dissimilar device 103 are designated. Therefore, the setting method includes the area 400 including the boundary between the plurality of scribe lines 102 and the device 103 in the alignment pattern 200. As a result, since the setting method can use a plurality of regions 400 including a boundary between a plurality of scribe lines 102 and the device 103 for alignment, even if the region 400, that is, the alignment pattern 200 does not include a feature portion, alignment can be suppressed. Reduced quasi-precision.

又,實施形態1之設定方法是在指定步驟ST2中,將避開配設在切割道102之TEG104的位置指定為區域400,並且在遮蓋步驟ST4中,將全體圖500的區域400的外側形成為遮罩510。因此,可抑制設定方法所設定之對準圖案200包含配設於切割道102上的TEG104。其結果為,由於設定方法是可抑制對準圖案200包含反射光之TEG104,因此可抑制對準精度的降低。Further, in the setting method of the first embodiment, in the designation step ST2, a position 400 that avoids the TEG 104 disposed on the cutting path 102 is designated as the area 400, and in the covering step ST4, the outside of the area 400 of the entire figure 500 is formed As a mask 510. Therefore, the alignment pattern 200 set by the setting method can be suppressed from including the TEG 104 arranged on the cutting track 102. As a result, since the setting method can suppress the alignment pattern 200 from including the TEG 104 of the reflected light, it is possible to suppress a decrease in alignment accuracy.

又,在實施形態1之設定方法中,由於藉由描繪顯示單元70的畫面71來指定區域400,因此可輕易地指定區域400,並且可輕易地設定對準圖案200。In the setting method of the first embodiment, the area 400 is specified by the screen 71 of the drawing display unit 70, so the area 400 can be easily specified, and the alignment pattern 200 can be easily set.

[實施形態2] 依據圖式來說明本發明的實施形態2之對準圖案的設定方法。圖10是顯示實施形態2之對準圖案的設定方法的指定步驟的圖像的一例之圖式。圖11是顯示實施實施形態2之對準圖案的設定方法的指定步驟後的圖像的一例之圖式。再者,圖10及圖11是對與實施形態1相同的部分附加相同的符號且省略說明。[Embodiment 2] A method for setting an alignment pattern according to Embodiment 2 of the present invention will be described with reference to the drawings. FIG. 10 is a diagram showing an example of an image showing a designation step of a method of setting an alignment pattern according to the second embodiment. FIG. 11 is a diagram showing an example of an image after the designation step of the alignment pattern setting method according to the second embodiment is performed. In addition, FIG. 10 and FIG. 11 are attached with the same code | symbol as the same part as Embodiment 1, and description is abbreviate | omitted.

實施形態2之對準圖案的設定方法(以下,簡稱為設定方法),除了指定步驟ST2與實施形態1不同之外,其他與實施形態1的設定方法是相同的。The setting method of the alignment pattern in the second embodiment (hereinafter, simply referred to as a setting method) is the same as the setting method in the first embodiment except that the designation step ST2 is different from the first embodiment.

在實施形態2之設定方法的指定步驟ST2中,如圖10所示,控制單元60在顯示單元70的畫面71所顯示之圖像300內,顯示指定區域600,並且依照操作員從輸入單元80的操作,而使指定區域600在圖像300上移動。當操作員從輸入單元80輸入決定指定區域600的位置的操作時,如圖11所示,控制單元60將決定後之指定區域600,與實施形態1同樣地指定為前述之區域400(計算外緣的位置並儲存)。再者,在實施形態2中,雖然指定區域600的平面形狀為矩形,且圖像300上僅顯示指定區域600的各個角部601,但在本發明中,指定區域600的形狀及顯示方法並不限定於實施形態2所示者。In the designation step ST2 of the setting method of the second embodiment, as shown in FIG. 10, the control unit 60 displays the designated area 600 in the image 300 displayed on the screen 71 of the display unit 70, and according to the operator from the input unit 80 Operation while moving the designated area 600 on the image 300. When the operator inputs an operation for determining the position of the designated area 600 from the input unit 80, as shown in FIG. 11, the control unit 60 designates the designated area 600 after the determination as the above-mentioned area 400 (calculated outside the calculation area) as in the first embodiment. Location of the edge and store). Furthermore, in the second embodiment, although the planar shape of the designated area 600 is rectangular, and only the corner portions 601 of the designated area 600 are displayed on the image 300, in the present invention, the shape and display method of the designated area 600 are not the same. It is not limited to the one shown in Embodiment 2.

實施形態2之設定方法是在指定步驟ST2中,指定4個包含切割道102與相異器件103間的界線之區域400。因此,設定方法會是將包含複數條切割道102與器件103間的界線之複數個區域400,包含在對準圖案200中,並且與實施形態1同樣地,即使區域400,即對準圖案200不包含特徵部分,也可抑制對準精度的降低。In the setting method of the second embodiment, in the designation step ST2, four areas 400 including the boundary between the scribe line 102 and the dissimilar device 103 are designated. Therefore, the setting method is to include the plurality of regions 400 including the boundary between the plurality of scribe lines 102 and the device 103 in the alignment pattern 200. In the same manner as in Embodiment 1, even if the region 400 is the alignment pattern 200, No feature portion is included, and a reduction in alignment accuracy can be suppressed.

[實施形態3] 依據圖式來說明本發明的實施形態3之對準圖案的設定方法。圖12是顯示實施形態3之對準圖案的設定方法在拍攝步驟所得到之圖像的一例的圖式。圖13是顯示在實施形態3之對準圖案的設定方法的拍攝步驟所得到之圖像中,實施指定步驟後之一例之圖式。再者,圖12及圖13,是對與實施形態1相同的部分附加相同的符號且省略說明。[Embodiment 3] A method of setting an alignment pattern according to Embodiment 3 of the present invention will be described with reference to the drawings. FIG. 12 is a diagram showing an example of an image obtained in a photographing step in a method of setting an alignment pattern in Embodiment 3. FIG. FIG. 13 is a diagram showing an example of the image obtained in the photographing step of the alignment pattern setting method in the third embodiment after the designation step is performed. In addition, in FIG.12 and FIG.13, the same code | symbol is attached | subjected to the same part as Embodiment 1, and description is abbreviate | omitted.

如圖12所示,實施形態3之對準圖案的設定方法(以下,簡稱為設定方法),除了在晶圓100的各切割道102上配置有作為加工痕即雷射刻槽(laser grooving)痕之外,其他與實施形態1的設定方法相同。在晶圓100的正面101上形成有低介電值絕緣體被膜(Low-k膜)之情況下,為了抑制因切割加工而低介電值絕緣體被膜剝離等,而在各切割道102的寬度方向的兩端分別形成雷射刻槽痕108。雷射刻槽痕108是在各切割道102的寬度方向的兩端上,施行利用雷射光線之燒蝕加工,而形成為與切割道102平行之所謂雷射加工溝。再者,低介電值絕緣體被膜是由如SiOF或是BSG(SiOB)的無機物系的膜、與聚醯亞胺(polyimide)系或是聚對二甲苯(parylene)系等的聚合物膜,即有機物系的膜而構成。As shown in FIG. 12, the alignment pattern setting method (hereinafter, simply referred to as a setting method) of the third embodiment, except that laser grooving, which is a processing mark, is disposed on each scribe line 102 of the wafer 100 Other than the marks, the setting method is the same as that of the first embodiment. When a low-dielectric-value insulator film (Low-k film) is formed on the front surface 101 of the wafer 100, in order to suppress peeling of the low-dielectric-value insulator film due to dicing, etc., the width direction of each scribe line 102 is reduced. Laser notches 108 are formed at both ends of the laser. Laser notches 108 are so-called laser-processed grooves that are parallel to the cutting track 102 by performing ablation processing using laser light rays at both ends in the width direction of each cutting track 102. In addition, the low dielectric insulator film is made of an inorganic film such as SiOF or BSG (SiOB), a polymer film such as polyimide or parylene, That is, it is constituted by an organic-based film.

在實施形態3之設定方法的指定步驟ST2中,操作員以觸控筆90描繪區域400的外緣,且控制單元60計算區域400的外緣的位置,而指定為區域400,前述區域400是如下的位置:包含顯示於顯示單元70的畫面71之圖像300的切割道102與各器件103間的界線,且圍繞避開配置於切割道102上之TEG104及雷射刻槽痕108。又,在指定步驟ST2中,如圖13所示,控制單元60在顯示單元70的畫面71中顯示被指定之區域400。如此一來,雖然在實施形態3之設定方法的指定步驟ST2中,將避開TEG104及雷射刻槽痕108之位置指定為區域400,但本發明在切割道102上未配置TEG104,而僅配置有雷射刻槽痕108之情況下,在指定步驟ST2中,宜將避開雷射刻槽痕108之位置指定為區域400。亦即,本發明是在指定步驟ST2中,將避開TEG104或CMP用的虛擬圖案等的構件,與加工痕之雷射刻槽痕108的至少一者之位置,指定為區域400。In the designation step ST2 of the setting method of the third embodiment, the operator draws the outer edge of the area 400 with the stylus 90, and the control unit 60 calculates the position of the outer edge of the area 400 and designates it as the area 400. The aforementioned area 400 is The position is as follows: the boundary between the scribe line 102 and each device 103 of the image 300 displayed on the screen 71 of the display unit 70 is surrounded by the TEG 104 and the laser scoring 108 arranged on the scribe line 102 to avoid it. In the designation step ST2, as shown in FIG. 13, the control unit 60 displays the designated area 400 on the screen 71 of the display unit 70. In this way, although in the designation step ST2 of the setting method of the third embodiment, the position avoiding the TEG104 and the laser notch 108 is designated as the area 400, the present invention does not arrange the TEG104 on the cutting path 102, but only In the case where the laser notches 108 are arranged, in the designation step ST2, it is desirable to designate a position avoiding the laser notches 108 as the area 400. That is, in the designation step ST2, in the present invention, the position of at least one of the member that avoids the TEG 104 or the dummy pattern for CMP, and the laser scoring 108 of the processing mark is designated as the area 400.

實施形態3之設定方法是在指定步驟ST2中,指定4個包含切割道102與相異器件103間的界線之區域400。因此,設定方法與實施形態1同樣地,即使區域400即對準圖案200不包含特徵部分,也可抑制對準精度的降低。In the setting method of the third embodiment, in the designation step ST2, four areas 400 including the boundary between the scribe line 102 and the dissimilar device 103 are designated. Therefore, the setting method is the same as that of the first embodiment, and even if the feature pattern is not included in the alignment pattern 200 in the region 400, a reduction in alignment accuracy can be suppressed.

又,實施形態3之設定方法是在指定步驟ST2中,將避開配設於切割道102之TEG104及雷射刻槽痕108之位置指定為區域400。其結果為,設定方法可抑制對準圖案200包含反射光之TEG104及雷射刻槽痕108,因此可抑制對準精度的降低。Further, in the setting method of the third embodiment, in the designation step ST2, a position avoiding the TEG 104 and the laser notch 108 arranged on the cutting path 102 is designated as the area 400. As a result, the setting method can suppress the alignment pattern 200 from including the TEG 104 and the laser scoring 108 of the reflected light, so that the reduction in the alignment accuracy can be suppressed.

再者,本發明並不受限於上述實施形態。亦即,在不脫離本發明的主旨的範圍內可進行各種變形而實施。再者,在前述之實施形態1及實施形態2中,雖然揭露了以雷射加工裝置1作為加工裝置的一例,但本發明的對準圖案的設定方法也可用於切割裝置中。The present invention is not limited to the embodiments described above. That is, various modifications can be made without departing from the gist of the present invention. Furthermore, in the foregoing first and second embodiments, the laser processing apparatus 1 is disclosed as an example of the processing apparatus, but the method for setting the alignment pattern of the present invention can also be used in a cutting apparatus.

1‧‧‧雷射加工裝置1‧‧‧laser processing device

10‧‧‧工作夾台10‧‧‧Work clamp

11‧‧‧保持面11‧‧‧ keep face

100‧‧‧晶圓100‧‧‧ wafer

101‧‧‧正面101‧‧‧ Positive

102‧‧‧切割道102‧‧‧cut road

103‧‧‧器件103‧‧‧device

104‧‧‧TEG(構件)104‧‧‧TEG (component)

105‧‧‧背面105‧‧‧ back

106‧‧‧交叉部106‧‧‧Intersection

107‧‧‧中心107‧‧‧ Center

108‧‧‧雷射刻槽痕108‧‧‧Laser Notch

110‧‧‧黏著膠帶110‧‧‧adhesive tape

111‧‧‧環狀框架111‧‧‧ Ring Frame

20‧‧‧雷射光線照射單元20‧‧‧laser light irradiation unit

21‧‧‧加工頭21‧‧‧Processing head

200‧‧‧對準圖案200‧‧‧ alignment pattern

201‧‧‧距離201‧‧‧ Distance

30‧‧‧匣盒30‧‧‧ box

300‧‧‧圖像300‧‧‧ images

40‧‧‧匣盒昇降部40‧‧‧Box Lifter

400‧‧‧區域400‧‧‧ area

401、402‧‧‧兩端401, 402‧‧‧ both ends

50‧‧‧拍攝單元50‧‧‧ shooting unit

500‧‧‧全體圖500‧‧‧ Whole picture

501‧‧‧最大X軸方向座標501‧‧‧Max X-axis coordinate

502‧‧‧最小X軸方向座標502‧‧‧Minimum X-axis coordinate

503‧‧‧最大Y軸方向座標503‧‧‧maximum Y-axis coordinate

504‧‧‧最小Y軸方向座標504‧‧‧Minimal Y-axis coordinate

510‧‧‧遮罩510‧‧‧Mask

60‧‧‧控制單元60‧‧‧Control unit

600‧‧‧指定區域600‧‧‧ Designated area

601‧‧‧角部601‧‧‧ Corner

70‧‧‧顯示單元(裝置)70‧‧‧display unit (device)

71‧‧‧畫面(操作畫面)71‧‧‧ screen (operation screen)

80‧‧‧輸入單元80‧‧‧ input unit

81‧‧‧觸控面板81‧‧‧Touch Panel

90‧‧‧觸控筆90‧‧‧ Stylus

X、Y、Z‧‧‧方向X, Y, Z‧‧‧ directions

ST1‧‧‧拍攝步驟ST1‧‧‧Photographing steps

ST2‧‧‧指定步驟ST2‧‧‧Specification steps

ST3‧‧‧全體圖製作步驟ST3‧‧‧ Whole picture making steps

ST4‧‧‧遮蓋步驟ST4‧‧‧ Covering steps

ST5‧‧‧設定步驟ST5‧‧‧Setting steps

ST6‧‧‧儲存步驟ST6‧‧‧Storage steps

圖1是顯示實施實施形態1之對準圖案的設定方法之雷射加工裝置的構成例之立體圖。 圖2是圖1所示之雷射加工裝置的加工對象的晶圓的立體圖。 圖3是顯示實施形態1之對準圖案的設定方法的流程之流程圖。 圖4是顯示在圖3所示之對準圖案的設定方法的拍攝步驟中所得到之圖像的一例之圖式。 圖5是顯示在圖4所示之圖像實施了圖3所示之對準圖案的設定方法的指定步驟之一例之圖式。 圖6是顯示將圖5所示之圖像的主要部分放大之圖式。 圖7是顯示在圖5所示之圖像實施了圖3所示之對準圖案的設定方法的全體圖製作步驟之一例之圖式。 圖8是顯示在圖7所示之圖像實施了圖3所示之對準圖案的設定方法的遮蓋步驟之一例之圖式。 圖9是顯示在對準圖案的設定方法的儲存步驟中所儲存之對準圖案與切割道間的距離等的一例之圖式。 圖10是顯示實施形態2之對準圖案的設定方法的指定步驟的圖像的一例之圖式。 圖11是顯示實施實施形態2之對準圖案的設定方法的指定步驟後的圖像的一例之圖式。 圖12是顯示在實施形態3之對準圖案的設定方法的拍攝步驟中所得到之圖像的一例之圖式。 圖13是顯示在實施形態3之對準圖案的設定方法的拍攝步驟中所得到之圖像,實施指定步驟後之一例之圖式。FIG. 1 is a perspective view showing a configuration example of a laser processing apparatus for performing a method of setting an alignment pattern according to the first embodiment. FIG. 2 is a perspective view of a wafer to be processed by the laser processing apparatus shown in FIG. 1. 3 is a flowchart showing a flow of a method of setting an alignment pattern in the first embodiment. FIG. 4 is a diagram showing an example of an image obtained in a photographing step of the setting method of the alignment pattern shown in FIG. 3. FIG. 5 is a diagram showing an example of a designation step in which the method shown in FIG. 3 is performed on the image shown in FIG. 4. FIG. 6 is a diagram showing an enlarged main part of the image shown in FIG. 5. FIG. 7 is a diagram showing an example of a whole drawing creation process in which the image shown in FIG. 5 is subjected to the method of setting the alignment pattern shown in FIG. 3. FIG. 8 is a diagram showing an example of a masking step in which the method shown in FIG. 3 is performed on the image shown in FIG. 7. FIG. 9 is a diagram showing an example of the distance between the alignment pattern and the scribe line, etc., stored in the storing step of the alignment pattern setting method. FIG. 10 is a diagram showing an example of an image showing a designation step of a method of setting an alignment pattern according to the second embodiment. FIG. 11 is a diagram showing an example of an image after the designation step of the alignment pattern setting method according to the second embodiment is performed. FIG. 12 is a diagram showing an example of an image obtained in a photographing step of a method of setting an alignment pattern in Embodiment 3. FIG. FIG. 13 is a diagram showing an example of an image obtained in a photographing step of a method of setting an alignment pattern according to the third embodiment after the designation step is performed.

Claims (3)

一種對準圖案的設定方法,是將正面形成有藉由複數條切割道而被區劃成格子狀之器件之晶圓,沿著該切割道分割時,用以檢測該切割道的位置,該對準圖案的設定方法之特徵在於具備: 拍攝步驟,拍攝包含該切割道的交叉部之圖像; 指定步驟,在顯示有包含該交叉部之圖像之裝置的操作畫面之中,指定至少2個以上包含該切割道與器件間的界線之區域; 全體圖製作步驟,製作包含所有的指定區域之全體圖; 遮蓋步驟,在該全體圖中,將指定之區域以外進行遮蓋; 設定步驟,將該被遮蓋之全體圖設定為對準圖案;及 儲存步驟,儲存該對準圖案的任一區域,與該切割道間的距離。A method for setting an alignment pattern is to form a wafer on the front surface of which is divided into a grid by a plurality of scribe lines. When dividing along the scribe line, it is used to detect the position of the scribe line. The quasi-pattern setting method is characterized by having: a photographing step of capturing an image of an intersection including the cutting path; and a designation step of specifying at least two of the operation screens of the device including the image of the intersection. The above area includes the boundary between the scribe line and the device; the whole picture making step produces an entire picture including all the designated areas; the masking step, in the whole picture, covers the designated area outside the designated area; the setting step, the The entire covered image is set as an alignment pattern; and a storing step of storing a distance between any area of the alignment pattern and the cutting path. 如請求項1的對準圖案的設定方法,其中該指定步驟是將避開形成於該切割道之構件或者是加工痕之位置,指定為該區域。For example, the method for setting the alignment pattern of claim 1, wherein the designation step is to designate the area that avoids a member or a processing mark formed on the scribe line as a region. 如請求項1或2的對準圖案的設定方法,其中該指定步驟是藉由描繪顯示有包含該交叉部之圖像之裝置的操作畫面,來指定該區域。For example, the method for setting the alignment pattern of item 1 or 2, wherein the designation step is to designate the area by drawing an operation screen of a device displaying an image including the intersection.
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