TW201908346A - Resin composition - Google Patents

Abstract

The present invention provides a resin composition capable of suppressing the aggregation of carbon black while maintaining a balance in characteristics such as color development, minimum melt viscosity and glass transition temperature. The resin composition of the present invention includes: (A) epoxy resin, (B) inorganic filler, (C) carbon black having a DBP absorption of 130 cm3 / 100 g or less, and (D) a polymer resin having a glass transition temperature of 30 DEG C or less. Furthermore, relative to 100 mass% of nonvolatile substance in the resin composition, the quantity of inorganic filler is more than 30 mass% and less than 95 mass%, or the quantity of inorganic filler is more than 75 mass% and less than 95 mass%.

Description

Resin composition

The present invention relates to a resin composition. The present invention further relates to a resin sheet, a circuit board, and a semiconductor wafer package obtained using the resin composition.

In recent years, miniaturization and high performance of electronic devices are progressing. Along with this, in semiconductor package substrates, build-up layer multi-layering, wiring miniaturization, and high density are required. In addition, with the popularization of smart phones and tablet devices, thinner requirements have become stronger. Here, a thin package substrate having a thin core material or a coreless structure is required. In order to realize such a thin package substrate, the insulating layer is required to have high insulation even if it is thin.

On the other hand, the insulating layer is sometimes required to contain carbon black to color it. For example, Patent Document 1 discloses a resin composition containing carbon black as a smear suppressing component. Further, Patent Document 2 discloses a resin composition containing a polymer resin having a glass transition temperature of 30 ° C. or lower. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2014-005464 [Patent Document 2] Japanese Patent Application Publication No. 2014-095047

[Problems to be Solved by the Invention]

In order to increase the glass transition temperature of the insulating layer and improve heat resistance, the present inventors have tried to mix an inorganic filler into a resin composition. In addition, in order to adjust the melt viscosity of the resin composition to an appropriate value to improve the lamination property of the resin sheet, the inventors have tried to formulate a polymer resin having a glass transition temperature of 30 ° C. or lower into the resin composition. Then, the present inventors conducted studies in order to improve the balance of physical properties in a resin composition including a combination of these inorganic fillers and a polymer resin.

In this study, the present inventors found that when such a resin composition is used in a case where carbon black is used for coloring, agglomeration of carbon black may occur. According to the research of the present inventors, the agglomeration of carbon black as described above is caused by the difference in compatibility between the carbon black and the inorganic filler and the polymer resin.

When agglomeration of carbon black occurs, the color development of the insulating layer is affected by the agglomeration, and a desired color tone may not be obtained. In addition, when agglomerates of carbon black defects having a size that can be visually discerned are generated due to the aggregation of carbon black, even if there is no problem in the quality of the resin composition, the value of the product may still be underestimated.

The present invention is an invention proposed in view of the foregoing problems, and an object of the present invention is to provide a resin composition capable of suppressing the aggregation of carbon black while achieving a balance among characteristics such as color development, minimum melt viscosity, and glass transition temperature. A resin sheet having a resin composition layer containing the aforementioned resin composition; a circuit board including an insulating layer, said insulating layer being a cured product of the aforementioned resin composition The formed body; and a semiconductor wafer package comprising the hardened body of the aforementioned resin composition. [Means for solving problems]

The present inventors have conducted intensive studies in order to solve the aforementioned problems. As a result, it was found that (A) an epoxy resin, (B) an inorganic filler, (C) a carbon black having a DBP absorption of less than a specified value, and (D) a polymer resin having a glass transition temperature of 30 ° C or lower. The resin composition can solve the aforementioned problems, and thus completed the present invention. That is, the present invention is an invention as described below.

. [1] A resin composition comprising: (A) an epoxy resin, (B) inorganic filler, (C) DBP absorption amount of carbon black and (D) a glass transition temperature of 130cm ³ / 100g or less was 30 Polymer resin below ℃. [2]. The resin composition according to [1], wherein the amount of the component (B) is 30% by mass or more and 95% by mass or less with respect to 100% by mass of the nonvolatile component in the resin composition. [3]. The resin composition according to [1] or [2], wherein the amount of the component (B) is 75% by mass or more and 95% by mass or less with respect to 100% by mass of the nonvolatile component in the resin composition. [4]. The resin composition according to any one of [1] to [3], wherein the component (A) contains (A-1) an epoxy resin containing nitrogen or an epoxy resin having a condensed ring structure. [5]. The resin composition according to any one of [1] to [4], wherein the (D) component has a polybutadiene structure, a polysiloxane structure, and a polyalkylene group in the molecule. One or more structures selected from the group consisting of a structure, a polyalkylene oxide structure, a polyisoprene structure, a polyisobutylene structure, a polycarbonate structure, and a polyacrylic structure. [6]. The resin composition according to any one of [1] to [5], wherein the component (D) has a functional group capable of reacting with the component (A). [7]. The resin composition according to any one of [1] to [6], wherein the component (D) has a hydroxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group, and an amino formic acid. One or more functional groups selected from the group consisting of ester groups. [8]. The resin composition according to any one of [1] to [7], wherein the number average molecular weight of the component (D) is 4,000 or more and 100,000 or less. [9]. The resin composition according to any one of [1] to [8], wherein the amount of the component (D) is 0.2% by mass or more with respect to 100% by mass of the non-volatile component in the resin composition 20 Mass% or less. [10]. The resin composition according to any one of [1] to [9], wherein the amount of the component (C) is 0.1% by mass or more relative to 100% by mass of the nonvolatile component in the resin composition. Mass% or less. [11]. The resin composition according to any one of [1] to [10], which is a resin composition for an insulating layer of a semiconductor wafer package. [12]. The resin composition according to any one of [1] to [11], which is a resin composition for semiconductor sealing. [13] A resin sheet comprising a support and a resin composition layer provided on the support, the resin composition layer including the resin composition according to any one of [1] to [12]. [14]. The resin sheet according to [13], which is a resin sheet for an insulating layer of a semiconductor wafer package. [15]. A circuit board including an insulating layer formed by a cured product of the resin composition according to any one of [1] to [12]. [16]. A semiconductor chip package comprising: the circuit substrate according to [15], and a semiconductor wafer mounted on the circuit substrate. [17]. A semiconductor wafer package comprising: a semiconductor wafer and a cured product of the resin composition according to any one of [1] to [12] in which the semiconductor wafer is sealed. [Effect of the invention]

According to the present invention, there can be provided a resin composition capable of suppressing the agglomeration of carbon black while balancing characteristics such as color development, minimum melt viscosity, and glass transition temperature; and a resin sheet having a resin composition layer, The resin composition layer includes the foregoing resin composition; a circuit substrate including an insulating layer, the insulating layer is formed by a hardened product of the foregoing resin composition; and a semiconductor chip package, It contains the hardened | cured material of the said resin composition.

[Best Mode for Implementing Invention]

The following are examples and examples, and the present invention will be described in detail. However, the present invention is not limited to the embodiments and examples listed below, and can be arbitrarily changed and implemented without departing from the scope of the patent application of the present invention and its equivalent range.

[1. Overview of resin composition] The resin composition of the present invention includes: (A) epoxy resin, (B) inorganic filler, (C) carbon black with DBP absorption below a specified value, and (D) glass Polymer resin with a transition temperature of 30 ° C or lower. In the following description, "(C) carbon black" may be referred to as "(C) carbon black" as a component (C) having a DBP absorption of less than a specified value. In the following description, the "polymer resin having a glass transition temperature of 30 ° C or lower" as the component (D) may be referred to as "(D) polymer resin".

By combining and including the aforementioned (A) epoxy resin, (B) inorganic filler, (C) carbon black, and (D) polymer resin, the resin composition can obtain a so-called "in color development, minimum melt viscosity, and glass The characteristics of the transition temperature and the like can be balanced while suppressing the aggregation of carbon black. The hardened material of such a resin composition makes use of its excellent characteristics, and can be preferably used as an insulating layer and a sealing material of a semiconductor chip package.

Moreover, the said resin composition may further contain arbitrary components, and may be combined with (A) an epoxy resin, (B) an inorganic filler, (C) carbon black, and (D) a polymer resin. Examples of the optional component include (E) a curing agent, (F) a curing accelerator, (G) a thermoplastic resin, (H) a flame retardant, and the like.

[2. (A) Epoxy resin]] The resin composition of the present invention contains an epoxy resin as the (A) component. (A) An epoxy resin usually has an epoxy group in the molecule. (A) The number of epoxy groups per molecule is generally one or more, and preferably two or more. From the viewpoint that the desired effect of the present invention can be significantly obtained, the ratio of the epoxy resin having two or more epoxy groups in one molecule with respect to 100% by mass of the non-volatile content of the epoxy resin (A) It is preferably 50% by mass or more, more preferably 60% by mass or more, and particularly preferably 70% by mass or more.

Examples of the (A) epoxy resin include a fluorine-containing epoxy resin such as a bixylenol epoxy resin; a bisphenol AF epoxy resin; and a perfluoroalkyl epoxy resin; Bisphenol A epoxy resin; Bisphenol F epoxy resin; Bisphenol S epoxy resin; Bisphenol AF epoxy resin; Bicyclopentadiene epoxy resin; Trihydric phenol epoxy resin; Naphthalene Phenol novolac epoxy resin; phenol novolac epoxy resin; tert-butyl-catechol epoxy resin; naphthalene epoxy resin; naphthol epoxy resin; anthracene epoxy resin; glycidol Amine epoxy resin; Glycidyl ester epoxy resin; Cresol novolac epoxy resin; Biphenyl epoxy resin; Linear aliphatic epoxy resin; Epoxy resin with butadiene structure; Alicyclic Epoxy resin; heterocyclic epoxy resin; epoxy resin containing a spiro ring; cyclohexane epoxy resin; cyclohexanedimethanol epoxy resin; naphthylene ether epoxy resin ; Trimethylol epoxy resin; Tetraphenylethane epoxy resin; Phosphorous epoxy resin, etc .; (A) An epoxy resin can be used individually by 1 type, or can be used in combination of 2 or more type.

(A) The epoxy resin is preferably an epoxy resin containing (A-1) a nitrogen-containing epoxy resin or an epoxy resin having a condensed ring structure. As the (A-1) component system, an epoxy resin containing only nitrogen, an epoxy resin having only a condensed ring structure, or an epoxy resin having a nitrogen and a condensed ring structure may be used in combination. To use. When the (A) epoxy resin contains the component (A-1), the desired effect of the present invention can be significantly exhibited, and in particular, the glass transition temperature of the cured product of the resin composition can be effectively increased. The effect of raising the glass transition temperature in this way is significant when the component (A-1) and the polymer resin (D) are combined. Furthermore, the component (A-1) usually improves the shear strength, the flexural strain at break, and the breakability of the cured product of the resin composition.

The nitrogen-containing epoxy resin is an epoxy resin containing a nitrogen atom in a molecule. Examples of preferred nitrogen-containing epoxy resins include glycidylamine-type epoxy resins and aminephenol-type epoxy resins.

Specific examples of the nitrogen-containing epoxy resin include "630" and "630LSD" (glycidylamine type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "EP-3950S" and "EP-3950L" manufactured by ADEKA Corporation. "," EP-3980S "(glycidylamine type epoxy resin);" GAN "," GOT "(glycidylamine type epoxy resin) manufactured by Nippon Kayaku Co., Ltd .;" ELM-100 "(made by Sumitomo Chemical Co., Ltd. Glycidylamine type epoxy resin) and the like. These systems can be used alone or in combination of two or more.

The epoxy resin having a condensation ring structure is an epoxy resin having a condensation ring structure in a molecule. Examples of the preferable epoxy resin having a condensed ring structure include a naphthalene-type epoxy resin, a naphthalene-type 4-functional epoxy resin, a naphthol-type epoxy resin, a naphthyl ether-type epoxy resin, and an anthracene-type ring. Oxygen resin, dicyclopentadiene type epoxy resin. Among them, naphthalene-type epoxy resins, naphthalene-type 4-functional epoxy resins, naphthol-type epoxy resins, naphthyl ether-type epoxy resins, and dicyclopentadiene-type epoxy resins are more preferable, and naphthalene-type epoxy resins Epoxy resin and naphthol type epoxy resin are more preferable.

Specific examples of the epoxy resin having a condensed ring structure include "HP4032" and "HP4032SS" (naphthalene-type epoxy resin) manufactured by DIC; "HP-4700" and "HP-4710" manufactured by DIC (Naphthalene-type 4-functional epoxy resin); "HP-7200H", "HP-7200", "HP-7200L" (dicyclopentadiene-type epoxy resin) manufactured by DIC; "EXA7311" manufactured by DIC, "EXA7311-G3", "EXA7311-G4", "EXA7311-G4S", "HP6000" (naphthyl ether epoxy resin); "NC7000L" (naphthol novolac epoxy resin) made by DIC; "ESN475V" (naphthol-type epoxy resin) manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd .; "ESN485" (naphthol novolac-type epoxy resin) manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd .; "YX8800" (anthracene-type epoxy resin); "PG-100" and "CG-500" (茀 -type epoxy resin) made by OSAKA gas chemical company; "YL7800" (茀 -type epoxy resin) made by Mitsubishi Chemical Corporation ); "YX8800" (anthracene-type epoxy resin) and the like manufactured by Mitsubishi Chemical Corporation. These systems can be used alone or in combination of two or more.

When a combination of an epoxy resin containing nitrogen and an epoxy resin having a condensed ring structure is used as the component (A-1), these amount ratios are preferably concentrated within a specified range. Specifically, the mass ratio of the "nitrogen-containing epoxy resin: epoxy resin having a condensed ring structure" is preferably 1: 0.1 to 1:10, more preferably 1: 0.3 to 1: 5, and more preferably 1: 0.6 ~ 1: 2.5. By setting the amount ratio of the nitrogen-containing epoxy resin and the epoxy resin having a condensed ring structure to such a range, the heat resistance of the cured product of the resin composition can be effectively improved.

The amount of the (A-1) component in the resin composition is preferably 100% by mass or more with respect to the nonvolatile content of the resin composition, preferably 0.5% by mass or more, more preferably 0.8% by mass or more, and particularly preferably 1.0% by mass The above is preferably 10% by mass or less, more preferably 8% by mass or less, and particularly preferably 5% by mass or less. When the amount of the component (A-1) is in the aforementioned range, the desired effect of the present invention can be significantly obtained. Furthermore, the shear strength, the bending strain at break, and the crack resistance of the cured product of the resin composition are generally improved.

(A) The epoxy resin is preferably an epoxy resin containing (A-2) other than the component (A-1) in a liquid state at 25 ° C, and is preferably combined with the component (A-1). The component (A-2) does not include a nitrogen-containing epoxy resin which is liquid at 25 ° C and an epoxy resin having a condensed ring structure which is liquid at 25 ° C. By using the component (A-2) in combination with the component (A-1), the desired effect of the present invention can be significantly obtained.

As the (A-2) component, the epoxy resin which is liquid at 25 ° C. is preferably one having two or more epoxy groups in one molecule. The epoxy resin that is liquid at 25 ° C as the component (A-2) is preferably an aromatic epoxy resin having an aromatic ring in the molecule. Here, the term "aromatic ring" includes not only a monocyclic aromatic ring but also a polycyclic aromatic ring and an aromatic heterocyclic ring.

Examples of the component (A-2) include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol AF epoxy resin, glycidyl ester epoxy resin, and phenol novolac epoxy resin. , An alicyclic epoxy resin having an ester skeleton, a cyclohexane epoxy resin, a cyclohexanedimethanol epoxy resin, an aliphatic epoxy resin, and an epoxy resin having a butadiene structure. Among these, bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol AF type epoxy resin are preferable from the viewpoint that the desired effect of the present invention can be significantly obtained, and bisphenol A type epoxy resin and bisphenol F type epoxy resin are more preferable.

Specific examples of the component (A-2) include "828US" and "jER828EL" (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "JER806" and "jER807" (double Phenol F type epoxy resin); "jER152" (phenol novolac type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "ZX1059" (bisphenol A type epoxy resin and bisphenol F type) manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd. (Mixture of epoxy resins); "EX-721" (glycidyl ester type epoxy resin) made by Nagasechemtex; "CELOXIDE 2021P" (alicyclic epoxy resin with ester skeleton) made by DAICEL; Nissin "ZX1658" and "ZX1658GS" (liquid 1,4-glycidyl cyclohexane) manufactured by Iron Chemical Co., Ltd .; "YX7400" (epoxy resin with a soft aliphatic skeleton) manufactured by Mitsubishi Chemical Corporation. These systems can be used alone or in combination of two or more.

When the (A) epoxy resin contains a combination of the (A-1) component and the (A-2) component, it is preferable that these amount ratios be concentrated within a specified range. Specifically, the mass ratio of "(A-1) component: (A-2) component" is preferably 1: 0.1 ~ 1: 10, more preferably 1: 0.1 ~ 1: 8, and more preferably 1 : 0.1 ~ 1: 6. By setting the mass ratio of the component (A-1) to the component (A-2) in such a range, the desired effect of the present invention can be significantly obtained. In addition, the shear strength, the bending strain at break, and the breakability of the hardened material of the resin composition are generally improved.

When the (A) epoxy resin contains the (A-2) component, the amount of the (A-2) component is preferably 0.5% by mass or more with respect to 100% by mass of the nonvolatile component of the resin composition, and It is preferably 1% by mass or more, more preferably 2% by mass or more, preferably 10% by mass or less, still more preferably 8% by mass or less, and even more preferably 6% by mass or less. When the amount of the component (A-2) is within the aforementioned range, the desired effect of the present invention can be significantly obtained. Furthermore, the crack resistance of the hardened | cured material of a resin composition is generally improved.

(A) Epoxy resin may contain any of the (A-3) epoxy resins other than the (A-1) component and the (A-2) component, and is the same as the (A-1) component and (A-2) ) Ingredient combination. As such a component (A-3), an epoxy resin which is solid at 20 ° C is preferred. The epoxy resin which is solid at 20 ° C. is preferably one having three or more epoxy groups in one molecule. Furthermore, the (A-3) component is preferably an aromatic epoxy resin having an aromatic ring in the molecule.

Examples of preferred (A-3) components include cresol novolac epoxy resin, trihydric phenol epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, and bisphenol AF. Epoxy resin, tetraphenylethane epoxy resin. Among these, a biphenyl-type epoxy resin is preferable from the viewpoint that the desired effect of the present invention can be significantly obtained.

Specific examples of the component (A-3) include "N-690" (cresol novolac-type epoxy resin) and "N-695" (cresol novolac-type epoxy resin) manufactured by DIC; `` EPPN-502H '' (trihydric phenol type epoxy resin), `` YX4000HK '' (dixylenol type epoxy resin), `` YL7760 '' (bisphenol AF type epoxy resin), `` NC3000L '' manufactured by Nippon Kayaku Co., Ltd. "(Biphenyl type epoxy resin);" jER1010 "(solid bisphenol A type epoxy resin)," jER1031S "(tetraphenylethane type epoxy resin)," 157S70 "(bisphenol manufactured by Mitsubishi Chemical Corporation) Novolac epoxy resin), "jER1031S" (tetraphenylethane epoxy resin), etc. These systems can be used alone or in combination of two or more.

When the (A) epoxy resin contains the (A-3) component, the amount of the (A-3) component is preferably 0.5% by mass or more with respect to 100% by mass of the nonvolatile component in the resin composition. It is preferably 1 mass% or more, more preferably 2 mass% or more, more preferably 10 mass% or less, still more preferably 8 mass% or less, and still more preferably 6 mass% or less. When the amount of the component (A-3) is in the aforementioned range, the desired effect of the present invention can be significantly obtained. Furthermore, the mechanical strength and insulation reliability of the hardened | cured material of a resin composition are normally made good.

The amount of the entire (A) epoxy resin containing the above (A-1) component to (A-3) component is preferably 0.5% by mass or more with respect to 100% by mass of the non-volatile content of the resin composition, and more It is preferably 1 mass% or more, particularly preferably 3 mass% or more, preferably 30 mass% or less, still more preferably 20 mass% or less, and even more preferably 15 mass% or less. When the amount of the (A) epoxy resin is in the aforementioned range, the desired effect of the present invention can be significantly obtained.

(A) The epoxy equivalent of the epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, more preferably 80 to 2000, and still more preferably 110 to 1000. By setting it as this range, the crosslinking density of the hardened | cured material of a resin composition will become sufficient, and when a hardened | cured material is used as an insulating layer, the insulating layer with a small surface roughness can be obtained. The epoxy equivalent of the component (A) can be measured in accordance with JIS K7236, and is the mass of a resin containing 1 equivalent of an epoxy group.

(A) The weight-average molecular weight of the epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and more preferably 400 to 1500. Here, the weight average molecular weight of a liquid epoxy resin is a weight average molecular weight of polystyrene conversion measured by the gel permeation chromatography (GPC) method.

(A) The number average molecular weight of the epoxy resin is preferably less than 4,000, more preferably 3500 or less, and even more preferably 3,000 or less. The lower limit is preferably 500 or more, more preferably 1,000 or more, and even more preferably 1500 or more. The number average molecular weight (Mn) is a number average molecular weight in terms of polystyrene measured by gel permeation chromatography.

[3. (B) Inorganic Filler] The resin composition of the present invention contains an inorganic filler as the (B) component. By using the (B) inorganic filler, the heat resistance of the resin composition can be improved. Furthermore, by using an inorganic filler (B), since the thermal expansion rate of the hardened | cured material of a resin composition can be reduced normally, curvature can be suppressed. Furthermore, the (B) inorganic filler generally improves the insulation performance and sealing performance of the cured product of the resin composition.

As the material of the inorganic filler, an inorganic material is generally used, and an inorganic compound is preferably used. Examples of the material of the (B) inorganic filler include silicon dioxide, aluminum oxide, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, and water. Aluminum ore, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, Bismuth titanate, titanium oxide, zirconia, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium phosphate tungstate. Among these, silicon dioxide is particularly suitable from the viewpoint that the desired effect of the present invention can be significantly obtained. As the silicon dioxide system, spherical silicon dioxide is preferred. The (B) inorganic filler can be used alone or in combination of two or more.

In general, the (B) inorganic filler is contained in the resin composition in the state of particles. (B) The average particle size of the inorganic filler is preferably 0.01 μm or more, more preferably 0.05 μm or more, more preferably 0.1 μm or more, still more preferably 5 μm or less, and still more preferably 2.5 μm or less, more It is preferably 2.2 μm or less, and particularly preferably 2 μm or less. When the average particle diameter of the (B) inorganic filler is in the aforementioned range, the desired effect of the present invention can be significantly obtained, and an insulating layer having a relatively low surface roughness can usually be obtained.

(B) The average particle diameter of the inorganic filler can be measured by a laser diffraction / scattering method based on the Mie scattering theory. Specifically, the particle size distribution of the (B) inorganic filler can be prepared on the basis of volume by a laser diffraction scattering particle size distribution measurement device, and the average particle diameter can be measured from the particle size distribution as the average particle size. path. As the measurement sample, a solvent in which (B) the inorganic filler is dispersed in water or the like can be preferably used. As the laser diffraction scattering type particle size distribution measuring device, "LA-500" manufactured by Horiba, Ltd. can be used.

Examples of the (B) inorganic filler as described above include "YC100C", "YA050C", "YA050C-MJE", and "YA010C" manufactured by Admatechs; "UFP-30" manufactured by Denka Kogyo; Tokuyama "Shirufiru NSS-3N", "Shirufiru NSS-4N", "Shirufiru NSS-5N"; Admatechs Corporation "SC2500SQ", "SO-C6", "SO-C4", "SO-C2", "SO- C1 "and so on.

(B) The inorganic filler is preferably surface-treated with an appropriate surface-treating agent. The surface treatment can improve the moisture resistance and dispersibility of the (B) inorganic filler. Examples of the surface treatment agent include a fluorine-containing silane coupling agent, an aminosilane-based coupling agent, an epoxy silane-based coupling agent, a mercaptosilane-based coupling agent, a silane-based coupling agent, an alkoxysilane compound, and an organosilicon nitrogen. Alkane compounds, titanate-based coupling agents, and the like.

Examples of commercially available surface treatment agents include "KBM22" (dimethyldimethoxysilane) manufactured by Shin-Etsu Chemical Industry Co., Ltd. and "KBM403" (3-glycidyloxypropyltrimethyl) manufactured by Shin-Etsu Chemical Industry Oxysilane), Shin-Etsu Chemical Industry Company "KBM803" (3-mercaptopropyltrimethoxysilane), Shin-Etsu Chemical Industry Company "KBE903" (3-aminopropyltriethoxysilane), Shin-Etsu Chemical Industry "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by the company, "SZ-31" (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Industry Co., Ltd., and "KBM103" manufactured by Shin-Etsu Chemical Industry Co., Ltd. "(Phenyltrimethoxysilane)," KBM-4803 "(long-chain epoxy-based silane coupling agent) manufactured by Shin-Etsu Chemical Industry Co., Ltd., and the like. The surface treatment agent may be used singly or in combination of two or more kinds.

The amount of the (B) inorganic filler in the resin composition is preferably 30% by mass or more, more preferably 50% by mass or more, and more preferably 75% by mass relative to 100% by mass of the nonvolatile components in the resin composition. % Or more, preferably 95% by mass or less, still more preferably 93% by mass or less, and more preferably 90% by mass or less. When the amount of the (B) inorganic filler is in the aforementioned range, the desired effect of the present invention can be significantly obtained. In addition, generally, the amount of the inorganic filler (B) is greater than or equal to the lower limit of the aforementioned range, so that the thermal expansion coefficient of the cured product of the resin composition can be reduced. Further, when the aforementioned range is lower than the upper limit, the The mechanical strength of the resin composition is improved, particularly.

[4. (C) Carbon black] The resin composition of the present invention contains carbon black having a DBP absorption of not more than a specified value as the (C) component. (C) carbon black has a DBP absorption amount of the particular system is usually 130cm ³ / 100g or less, preferably 100cm ³ / 100g or less, particularly preferably 80cm ³ / 100g or less. In this way, the amount of DBP absorption is small (C) carbon black. If it is combined with (A) epoxy resin, (B) inorganic filler and (D) polymer resin, it is possible to suppress the (C) carbon black. Agglutination. In addition, the characteristics of the resin composition containing such (C) carbon black and its cured product (the minimum melt viscosity of the resin composition, the color development of the cured product of the resin composition, and the glass transition temperature, etc.) The properties of the resin composition obtained by combining other carbon blacks with (A) an epoxy resin, (B) an inorganic filler, and (D) a polymer resin are superior to the same level or more. Therefore, by using (C) carbon black, it is possible to achieve a resin composition that can balance characteristics such as color development, minimum melt viscosity, and glass transition temperature, while suppressing aggregation of carbon black. If there is a tendency for carbon black to tend to aggregate in a resin composition containing (B) an inorganic filler and (D) a polymer resin, the above-mentioned effects are for those having ordinary knowledge in the technical field to which this belongs. Say something unexpected. The lower limit of (C) a DBP absorption amount of carbon black is not particularly limited, and may be, for example 10cm ³ / 100g or more, 20cm ³ / 100g or more, 40cm ³ / 100g or more.

(C) The DBP absorption of carbon black can be measured in accordance with the method specified in JIS K 6217-4: 2017. The amount of DBP absorption is a physical property value that is affected by factors such as the type and amount of functional groups present on the surface of carbon black, and the specific surface area of carbon black. The amount of DBP absorption is related to the (B) inorganic filler. The dispersibility of (C) carbon black mixed with (D) the polymer resin has a correlation, which has not been known conventionally.

(C) The average particle diameter of the carbon black is preferably 5 nm or more, more preferably 10 nm or more, particularly preferably 15 nm or more, preferably 300 nm or less, still more preferably 100 nm or less, and particularly preferably 50 nm or less. In general, carbon blacks having a smaller average particle size tend to cause aggregation, but the resin composition of the present invention can generally suppress aggregation even with a small (C) carbon black. Therefore, from the viewpoint of effectively utilizing the effects of the present invention, it is preferable to use a smaller average particle diameter as described above as the (C) carbon black system. In addition, by using (C) carbon black having a small average particle diameter as described above, the color of the cured product of the resin composition can be easily adjusted.

The average particle diameter of the (C) carbon black is not the average particle diameter of the secondary particles aggregated by a plurality of (C) carbon blacks, but the average particle diameter of the primary particles of the individual (C) carbon blacks. The average particle diameter of the (C) carbon black can be obtained by observing the (C) carbon black with an electron microscope, and calculating the average diameter of the carbon black.

(C) The pH of the carbon black is preferably 1.0 or more, more preferably 2.0 or more, particularly preferably 3.0 or more, more preferably 7.0 or less, still more preferably 6.0 or less, and particularly preferably 4.0 or less. By using (C) carbon black having such a range of pH, the desired effect of the present invention can be significantly obtained, and in particular, aggregation of (C) carbon black can be significantly suppressed.

(C) The pH of carbon black can be measured in accordance with the method specified in JIS K 5101-17-2: 2004.

(C) As the carbon black, commercially available carbon black may be used as it is, or a plurality of commercially available products having a physical property value such as a DBP absorption amount appropriately mixed within a specified range may be used. Commercially available carbon blacks are available from, for example, Mitsubishi Chemical Corporation, Tokai Carbon, Asahicar bon, NSCC Carbon, Nippon Pigment, Toyo-color, and Mikuni Color.

The amount of (C) carbon black in the resin composition is preferably 0.1% by mass or more, more preferably 0.15% by mass or more, and particularly preferably 0.2% by mass, with respect to 100% by mass of the nonvolatile matter in the resin composition. The above is preferably 3% by mass or less, more preferably 2.5% by mass or less, and particularly preferably 2% by mass or less. When the amount of (C) carbon black is in the aforementioned range, the desired effect of the present invention can be significantly obtained. In particular, when the amount of (C) carbon black is equal to or more than the lower limit value of the aforementioned range, the cured product of the resin composition can be appropriately colored, and when the amount of (C) carbon black is equal to or less than the upper limit value of the aforementioned range. Therefore, the agglomeration of (C) carbon black can be particularly effectively suppressed.

[5. (D) Polymer resin] 树脂 The resin composition of the present invention contains a polymer resin having a glass transition temperature of 30 ° C. or lower as the (D) component. By using the component (D), the minimum melt viscosity of the resin composition can be reduced. Therefore, the lamination property of the resin sheet provided with the resin composition layer is generally improved. Specifically, the glass transition temperature of the (D) polymer resin is usually 30 ° C or lower, preferably 20 ° C or lower, and more preferably 10 ° C or lower. The lower limit value of the glass transition temperature is not particularly limited, but can be, for example, -30 ° C or higher. In addition, by using the (D) polymer resin, the elastic modulus of the cured product of the resin composition can generally be reduced, so that the peel strength of the sealing layer and the insulating layer formed by the cured product can be improved. In addition, (D) the polymer resin is generally difficult to change the linear thermal expansion coefficient in a wide temperature range of 25 ° C to 220 ° C, so that the dimensional stability of the hardened product of the resin composition can be improved.

(D) The glass transition temperature of a polymer resin can be measured by any one of the following measurement methods. That is, the glass transition temperature of the (D) polymer resin can be measured by thermomechanical analysis using a tensile load method. The measurement system can be performed using a test piece made of (D) polymer resin having a width of about 5 mm and a length of about 15 mm. The measurement conditions are usually a load of 1 g and a temperature increase rate of 5 ° C / min. The measurement was performed continuously twice, and the glass transition temperature was calculated in the second measurement. When the glass transition temperature Tg of the cured product of the resin composition is measured by thermomechanical analysis using a tensile load method, the result of the thermomechanical analysis of the cured product excludes the glass transition temperature of the cured product. In addition to Tg, the glass transition temperature of the (D) polymer resin can be exhibited. Therefore, the glass transition temperature (G) of the polymer resin can be determined by measuring the glass transition temperature Tg of the cured product by thermomechanical analysis using a tensile load method. Further, the glass transition temperature of the (D) polymer resin can be measured using a DSC (differential scanning calorimeter). As the DSC system, "EXSTARDSC6200" manufactured by Seiko Instruments can be used. In the measurement using DSC, the temperature of the inflection point can be measured by measuring the temperature at a temperature of -60 ° C under a nitrogen environment, 10 mg of the sample, and a heating rate of 10 ° C / min. The glass transition temperature (Tg) was calculated.

(D) Polymer resins have a polybutadiene structure, a polysiloxane structure, a polyalkylene structure, a polyalkylene oxide structure, a polyisoprene structure, and a polyisobutylene structure in the molecule. A compound having one or more structures selected from the group consisting of a polycarbonate structure, a polycarbonate structure, and a polyacrylic structure is preferred. By using the (D) polymer resin having such a structure, the desired effect of the present invention can be significantly obtained. In addition, the (D) polymer resin having such a structure is generally excellent in flexibility, and therefore it is effective to reduce the minimum melt viscosity of the resin composition. Furthermore, although carbon black generally tends to be easily aggregated, when it is combined with a (D) polymer resin having such a structure, the above (C) carbon black is less likely to be aggregated. Therefore, from the viewpoint of effectively utilizing effects such as (C) carbon black aggregation, it is preferable that the polymer resin (D) is a compound having the aforementioned structure in its molecule. Among them, from the viewpoint of more effectively exerting the above-mentioned effects, a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, a polycarbonate structure, and a polyacrylic structure are preferable. It is more preferable to use a polybutadiene structure, a polyisoprene structure, and a polycarbonate structure, and it is particularly preferable to use a polybutadiene structure and a polycarbonate structure.

The polybutadiene structure system includes not only a structure formed by polymerizing butadiene, but also a structure formed by hydrogenating the structure. Moreover, only one part of a butadiene structure system may be hydrogenated, or all of it may be hydrogenated. Furthermore, the polybutadiene structure is contained in the molecule of the (D) polymer resin, and may be contained in the main chain or in the side chain. A resin having a polybutadiene structure in the molecule is hereinafter sometimes referred to as a "butadiene resin". The butadiene resin is preferably a butadiene resin which is liquid at 25 ° C or has a glass transition temperature of 25 ° C or lower.

The polysiloxane structure is a structure including a siloxane bond, and is contained in a polysiloxane rubber, for example. The polysiloxane structure is contained in the molecule of the (D) polymer resin, and may be contained in the main chain or in the side chain. A resin having a polysiloxane structure in the molecule is hereinafter sometimes referred to as a "siloxane resin".

The polyalkylene structure preferably has a specified number of carbon atoms. The specific number of carbon atoms in the polyalkylene structure is preferably 2 or more, more preferably 3 or more, particularly preferably 5 or more, preferably 15 or less, still more preferably 10 or less, and particularly preferably 6 or less. The polyalkylene structure is contained in the molecule of the (D) polymer resin, and may be contained in the main chain or in the side chain. A resin having a polyalkylene structure in the molecule is hereinafter sometimes referred to as a "alkylene resin".

The polyalkylene oxide structure is preferably a specified number of carbon atoms. The specific number of carbon atoms in the polyalkoxy group structure is preferably 2 or more, preferably 3 or more, and more preferably 5 or more, preferably 15 or less, still more preferably 10 or less, and particularly preferably 6 or less. . The polyalkyleneoxy structure is contained in the molecule of the (D) polymer resin, and may be contained in the main chain or may be contained in the side chain. A resin having a polyalkyleneoxy structure in the molecule is hereinafter sometimes referred to as a "alkyleneoxy resin".

The polyisoprene structure is based on the molecule of the (D) polymer resin, and may be contained in the main chain or in the side chain. A resin having a polyisoprene structure in the molecule is hereinafter sometimes referred to as "isoprene resin".

The polyisobutylene structure is based on the molecule of the (D) polymer resin, and may be contained in the main chain or in the side chain. A resin having a polyisobutylene structure in the molecule is hereinafter sometimes referred to as "isobutylene resin".

The polycarbonate structure is based on the molecule of the (D) polymer resin, and may be contained in the main chain or in the side chain. A resin having a polycarbonate structure in the molecule is hereinafter sometimes referred to as a "carbonate resin". The carbonate resin is preferably a carbonate resin having a glass transition temperature of 25 ° C. or lower.

The polyacrylic structure is a structure in which a compound (acrylate, methacrylate, etc.) containing at least one of an acryl group and a methacryl group is formed by polymerizing the aforementioned acryl group or methacryl group structure. The polyacrylic acid structure is contained in the molecule of the (D) polymer resin, and may be included in the main chain or may be included in the side chain. Hereinafter, a resin having a polyacrylic acid structure in the molecule may be referred to as an "acrylic resin". The acrylic resin is preferably an acrylic resin having a glass transition temperature of 25 ° C. or lower.

The (D) polymer resin preferably has a functional group capable of reacting with the (A) epoxy resin. The functional group also includes a reactive group that appears by heating. When the polymer resin (D) has the aforementioned functional group, the mechanical strength of the cured product of the resin composition can be improved.

Examples of the functional group include a hydroxyl group, a carboxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group, and a urethane group. Among them, from the viewpoint that the effects of the present invention can be significantly obtained, the functional group is a group consisting of a hydroxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group, and a urethane group. One or more selected functional groups are preferred, and phenolic hydroxyl groups are particularly preferred.

(D) It is preferable that the polymer resin has a fluorene imine structure. By having a fluorene imine structure, the heat resistance of the (D) polymer resin can be effectively improved.

A preferable example of the (D) polymer resin is a butadiene resin. Preferred examples of the butadiene resin include a resin containing a hydrogenated polybutadiene skeleton, a butadiene resin containing a hydroxyl group, a butadiene resin containing a phenolic hydroxyl group, a butadiene resin containing a carboxyl group, The butadiene resin containing an acid anhydride group, the butadiene resin containing an epoxy group, the butadiene resin containing an isocyanate group, and the butadiene resin containing a urethane group. Among them, a butadiene resin containing a phenolic hydroxyl group is more preferable. Here, the "hydrogenated polybutadiene skeleton-containing resin" refers to a resin in which at least a part of the polybutadiene skeleton is hydrogenated, and does not necessarily need to be a resin in which the polybutadiene skeleton is completely hydrogenated. Examples of the resin containing a hydrogenated polybutadiene skeleton include an epoxy resin containing a hydrogenated polybutadiene skeleton. Examples of the butadiene resin containing a phenolic hydroxyl group include resins having a polybutadiene structure and a phenolic hydroxyl group.

Specific examples of the butadiene resin include "Ricon 657" (epoxy-containing polybutadiene), "Ricon 130MA8", "Ricon 130MA13", "Ricon 130MA20", "Ricon" 131MA5 "," Ricon 131MA10 "," Ricon 131MA17 "," Ricon 131MA20 "," Ricon 184MA6 "(polybutadiene containing acid anhydride groups)," JP-100 "," JP-200 "(made by Japan Soda Corporation) Epoxidized polybutadiene), "GQ-1000" (polybutadiene with hydroxyl and carboxyl groups introduced), "G-1000", "G-2000", "G-3000" (both terminal hydroxyl polybutadiene ), "GI-1000", "GI-2000", "GI-3000" (both ends of hydrogenated polybutadiene), "PB3600", "PB4700" (polybutadiene skeleton epoxy compound) manufactured by DAICEL ), "EPOFRIEND A1005", "EPOFRIEND A1010", "EPOFRIEND A1020" (epoxy compound of styrene-butadiene-styrene block copolymer), "FCA-061L" (hydrogenated polybutadiene) manufactured by Nagasechemtex Ene skeleton epoxy compound), "R-45EPT" (polybutadiene skeleton epoxy compound), and the like.

In addition, as an example of a preferable butadiene resin, linear polyimide using hydroxyl-terminated polybutadiene, a diisocyanate compound, and a quaternary acid anhydride as raw materials (Japanese Patent Laid-Open No. 2006-37083 (Polyimide described in International Publication No. 2008/153208). The polybutadiene structure content of the polyfluoreneimide resin is preferably 60% to 95% by mass, and more preferably 75% to 85% by mass. The details of the polyfluorene imide resin can be referred to those described in Japanese Patent Application Laid-Open No. 2006-37083 and International Publication No. 2008/153208, and the contents thereof are incorporated into this specification.

As another preferable example of the (D) polymer resin, a siloxane resin is mentioned. Specific examples of the silicone resin include "SMP-2006", "SMP-2003PGMEA", "SMP-5005PGMEA", amine-terminated polysiloxane, and tetrabasic acid anhydride manufactured by Shin-Etsu Silicone Corporation. The linear polyfluorene imide of the raw material (International Publication No. 2010/053185) and the like.

Preferred other examples of the (D) polymer resin include an alkylene resin and an alkylene oxide resin. Specific examples of the alkylene resin and the alkylene oxide resin include "PTXG-1000", "PTXG-1800", manufactured by Asahi Kasei Fibers Corporation, and "YX-7180" (including those having an ether bond) manufactured by Mitsubishi Chemical Corporation. Resin with an alkylene structure), "EXA-4850-150", "EXA-4816", "EXA-4822", manufactured by DIC Corporation, "EP-4000", "EP-4003", manufactured by ADEKA Corporation, "EP-4010", "EP-4011", "BEO-60E", "BPO-20E" manufactured by Shinnippon Chemical Co., Ltd., "YL7175" and "YL7410" manufactured by Mitsubishi Chemical Corporation.

As another preferable example of the (D) polymer resin, an isoprene resin is mentioned. Specific examples of the isoprene resin include "KL-610" and "KL-613" manufactured by Kuraray Corporation.

As another preferable example of the (D) polymer resin, an isobutylene resin is mentioned. Specific examples of the isobutylene resin include "SIBSTAR-073T" (styrene-isobutylene-styrene triblock copolymer) and "SIBSTAR-042D" (styrene-isobutylene diblock copolymer) manufactured by Kaneka Corporation. Wait.

As another preferable example of the (D) polymer resin, a carbonate resin is mentioned. Preferable examples of the carbonate resin include a carbonate resin containing a hydroxyl group, a carbonate resin containing a phenolic hydroxyl group, a carbonate resin containing a carboxyl group, a carbonate resin containing an acid anhydride group, and a carbonate containing an epoxy group. An ester resin, a carbonate resin containing an isocyanate group, a carbonate resin containing a urethane group, and the like.

Specific examples of the carbonate resin include "T6002", "T6001" (polycarbonate diol) manufactured by Asahi Kasei Chemicals, "C-1090", "C-2090", and "C-90" manufactured by Kuraray Corporation. 3090 "(polycarbonate diol).

Moreover, as an example of a preferable carbonate resin, the linear polyfluorene imide using a hydroxyl-terminated polycarbonate, a diisocyanate compound, and a quaternary acid anhydride as a raw material is mentioned. The content of the polycarbonate structure of the polyfluorene imide resin is preferably 60% by mass to 95% by mass, and more preferably 75% by mass to 85% by mass. For details of the polyfluorene imide resin, reference may be made to the description of International Publication No. 2016/129541, the content of which is incorporated into this specification.

As another preferable example of the (D) polymer resin, an acrylic resin is mentioned. Preferred examples of the acrylic resin include an acrylic resin containing a hydroxyl group, an acrylic resin containing a phenolic hydroxyl group, an acrylic resin containing a carboxyl group, an acrylic resin containing an acid anhydride group, an acrylic resin containing an epoxy group, and an isocyanate group. Acrylic resin, acrylic resin containing urethane group, and the like.

Specific examples of the acrylic resin include TEISAN RESIN "SG-70L", "SG-708-6", "WS-023", "SG-700AS", "SG-280TEA" (containing a carboxyl group) manufactured by Nagasechemtex Corporation. Acrylate copolymer resin, acid value 5 ~ 34mgKOH / g, weight average molecular weight 400,000 ~ 900,000, Tg-30 ℃ ~ 5 ℃), "SG-80H", "SG-80H-3", "SG- "P3" (epoxy-containing acrylate copolymer resin, epoxy equivalent 4761 to 14285 g / eq, weight average molecular weight 350,000 to 850,000, Tg 11 ° C to 12 ° C), "SG-600TEA", "SG-790" (Hydroxy-containing acrylate copolymer resin, hydroxyl value of 20 to 40 mgKOH / g, weight average molecular weight of 500,000 to 1.2 million, Tg-37 ° C to -32 ° C), "ME-2000", "W -116.3 "(carboxyl-containing acrylate copolymer resin)," W-197C "(hydroxyl-containing acrylate copolymer resin)," KG-25 "," KG-3000 "(epoxy-containing acrylate copolymerization) Resin)).

Preferable still other examples of the (D) polymer resin include acrylic rubber particles, polyamide fine particles, and polysiloxane particles. Specific examples of the acrylic rubber particles include resins exhibiting rubber elasticity, such as acrylonitrile butadiene rubber, butadiene rubber, and acrylic rubber, which are chemically crosslinked and are insoluble and insoluble in organic solvents. Resin microsomes. Specific examples of the acrylic rubber particles include XER-91 (manufactured by Nippon Synthetic Rubber Co., Ltd.); Staphyloid AC3355, AC3816, AC3832, AC4030, AC3364, IM101 (the above are manufactured by Ganz Chemical); Paraloid EXL2655, EXL2602 (the above are By Wu Yu Chemical Industry Co., Ltd.). As the polyamide fine particles, those having a flexible skeleton such as aliphatic polyamine and polyimide can be used. Specific examples of the polyamide fine particles include VESTOSINT 2070 (manufactured by DAICELHUELS), SP500 (manufactured by Toray), and the like.

(D) The polymer resin may be used alone or in combination of two or more kinds.

(D) From the viewpoint of exhibiting excellent flexibility, the polymer resin is preferably a high molecular weight. (D) The specific number average molecular weight Mn of the polymer resin is preferably 4,000 or more, more preferably 4500 or more, more preferably 5,000 or more, particularly preferably 5500 or more, preferably 100,000 or less, and still more preferably 95,000. Below, particularly preferred is 90,000 or less. When the number average molecular weight Mn of the (D) polymer resin is in the aforementioned range, the desired effect of the present invention can be significantly obtained. (D) The number average molecular weight Mn of the polymer resin is a number average molecular weight in terms of polystyrene measured by GPC (gel permeation chromatography).

When (D) the polymer resin has a functional group, the functional group equivalent of the (D) polymer resin is preferably 100 or more, more preferably 200 or more, more preferably 1,000 or more, and particularly preferably 2500 or more. It is preferably 50,000 or less, more preferably 30,000 or less, more preferably 10,000 or less, and particularly preferably 5,000 or less. The functional group equivalent is the gram number of a resin containing 1 gram equivalent of a functional group. For example, the epoxy group equivalent can be measured in accordance with JIS K7236. In addition, for example, the hydroxyl equivalent can be calculated by dividing the hydroxyl valence measured according to JIS K1557-1 by the molecular weight of KOH.

The amount of the (D) polymer resin in the resin composition is preferably 100% by mass or more with respect to the nonvolatile content of the resin composition, preferably 0.2% by mass or more, more preferably 0.3% by mass or more, and particularly preferably 0.4% by mass. The above is preferably 20% by mass or less, more preferably 15% by mass or less, and particularly preferably 10% by mass or less. When the amount of the (D) polymer resin is in the aforementioned range, the desired effect of the present invention can be significantly obtained. In particular, the minimum melt viscosity of the resin composition can be effectively reduced when the amount of the (D) polymer resin is above the lower limit of the aforementioned range, and it can be increased by being below the upper limit of the aforementioned range. The glass transition temperature of the hardened | cured material of a resin composition improves heat resistance.

[6. (E) Hardener] In addition to the components described above, the resin composition system may include (E) a hardener as an optional component. The (E) hardener system generally has a function of reacting with the (A) epoxy resin to harden the resin composition. (E) A hardener may be used individually by 1 type, or may be used in combination of 2 or more type.

Examples of the curing agent of the component (E) include an active ester curing agent, a phenol curing agent, a naphthol curing agent, a benzoxazine curing agent, a cyanate curing agent, and a carbodiimide. Department of hardeners and so on. Among them, from the viewpoint that the desired effect of the present invention can be significantly obtained, as the (E) curing agent, a phenol-based curing agent, a naphthol-based curing agent, an active ester-based curing agent, and a cyanate-based curing agent are Preferably, a phenol-based hardener and an active ester-based hardener are more preferred.

The active ester-based hardener is a compound having one or more active ester groups in one molecule. Among them, as the active ester-based hardener, phenol esters, thiophenol esters, N-hydroxylamine esters, and heterocyclic hydroxyl compounds, etc., are esters having two or more reactivity in one molecule. A compound based on a base is preferred. The active ester-based hardener is preferably obtained by a condensation reaction of a carboxylic acid compound and / or a thiocarboxylic acid compound with a hydroxy compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester-based hardener obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester based from a carboxylic acid compound and a phenol compound and / or a naphthol compound is preferable. A hardener is also preferred.

Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromelic acid.

Examples of the phenol compound or naphthol compound include hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, reduced phenolphthalein, methylated bisphenol A, methylated bisphenol F, and methylformate. Bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-di Hydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, resorcinol, pyrogallol, dicyclopentadiene type diphenol compound, phenol novolac Wait. Here, the "dicyclopentadiene-type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol in one molecule of dicyclopentadiene.

Preferred specific examples of the active ester-based hardener include an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, and an active ester compound containing an acetonide of a phenol novolac. An active ester compound comprising a benzamidine compound of phenol novolac. Among them, an active ester compound containing a naphthalene structure and an active ester compound containing a dicyclopentadiene-type diphenol structure are more preferred. The "dicyclopentadiene-type diphenol structure" means a divalent structure formed from phenylene-bis-cyclopentyl-phenylene.

As commercially available products of the active ester-based hardener, for example, "EXB9451", "EXB9460", "EXB9460S", "HPC-8000-65T" as active ester compounds containing a dicyclopentadiene-type diphenol structure, "HPC-8000H-65TM", "EXB-8000L-65TM" (manufactured by DIC Corporation); "EXB9416-70BK" (manufactured by DIC Corporation) as an active ester compound containing a naphthalene structure; as an acetic acid compound containing phenol novolac "DC808" (manufactured by Mitsubishi Chemical Corporation) as an active ester compound; "YLH1026" (manufactured by Mitsubishi Chemical Corporation) as an active ester compound containing benzoic acid phenol novolac; activity as an acetic acid compound of phenol novolac "DC808" (Mitsubishi Chemical Corporation) as an ester-based hardener; "YLH1026" (Mitsubishi Chemical Corporation), "YLH1030" (Mitsubishi Chemical Corporation) , "YLH1048" (manufactured by Mitsubishi Chemical Corporation), etc.

As the phenol-based hardener and naphthol-based hardener, those having a novolac structure are preferred from the viewpoints of heat resistance and water resistance. From the viewpoint of adhesion with the conductor layer, a nitrogen-containing phenol-based hardener is more preferred, and a triazine skeleton-containing phenol-based hardener is more preferred.

Specific examples of the phenol-based hardener and naphthol-based hardener include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Meiwa Kasei Corporation; and "NHN" manufactured by Nippon Kayaku Co., Ltd. , "CBN", "GPH"; "SN170", "SN180", "SN190", "SN475", "SN485", "SN495V", "SN375", "SN395" made by Nippon Steel & Sumitomo Metal Corporation; DIC Corporation "TD-2090", "LA-7052", "LA-7054", "LA-1356", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160" "," KA-1163 "," KA-1165 ";" GDP-6115L "," GDP-6115H ", etc., manufactured by Qunrong Chemical Co., Ltd.

Specific examples of the benzoxazine-based hardener include "HFB2006M" manufactured by Showa Polymer Co., Ltd., and "P-d" and "F-a" manufactured by Shikoku Chemical Industry Co., Ltd.

Examples of the cyanate-based curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo (3-methylene-1,5-phenylene cyanate), 4,4 ' -Methylenebis (2,6-dimethylphenylcyanate), 4,4'-ethylenediphenyldicyanate, hexafluorobisphenol A dicyanate, 2,2- Bis (4-cyanate) phenylpropane, 1,1-bis (4-cyanatephenylmethane), bis (4-cyanate-3,5-dimethylphenyl) methane, 1, 3-bis (4-cyanatephenyl-1- (methylethylene)) benzene, bis (4-cyanatephenyl) sulfide, and bis (4-cyanatephenyl) ether, etc. Bifunctional cyanate resins; polyfunctional cyanate resins derived from phenol novolacs and cresol novolacs; prepolymers of which these cyanate resins are partially triazinated. Specific examples of the cyanate-based curing agent include "PT30" and "PT60" (both are phenol novolac-type polyfunctional cyanate resins), "BA230", and "BA230S75" (bisphenol) manufactured by LONZA Japan. A part of the A dicyanate is a tripolymerized triazide to form a prepolymer) and the like.

Specific examples of the carbodiimide-based hardener include "V-03" and "V-07" manufactured by Nishinbo Chemical Co., Ltd.

When the resin composition contains the (E) hardener, the amount of the (E) hardener is preferably 0.5% by mass or more with respect to 100% by mass of the nonvolatile component in the resin composition, and more preferably 1.0% by mass. Above all, particularly preferred is 2.0% by mass or more, preferably 20% by mass or less, still more preferably 15% by mass or less, and particularly preferred is 10% by mass or less. When the amount of the (E) component is in the aforementioned range, the desired effect of the present invention can be significantly obtained.

When the epoxy group number of (A) epoxy resin is set to 1, the active group number of (E) hardener is preferably 0.10 or more, more preferably 0.15 or more, more preferably 0.20 or more, and more preferably 2 Hereinafter, it is more preferably 1.5 or less, and more preferably 1.0 or less. Here, the "epoxy number of (A) epoxy resin" means the total of the total of the value of the non-volatile component of (A) epoxy resin present in the resin composition divided by the value of epoxy equivalent. value. In addition, the "number of active groups of (B) hardener" refers to the total value which divided the mass of the non-volatile component of (E) hardener which exists in a resin composition by the value of an active group equivalent. When the number of epoxy groups of (A) epoxy resin is set to 1 and the number of active groups of (E) hardener is in the aforementioned range, the desired effect of the present invention can be significantly improved, and the resin composition layer is generally hardened. The heat resistance of the material is further improved.

[7. (F) Hardening accelerator]] In addition to the components described above, the resin composition system may include (F) a hardening accelerator as an optional component. By using (F) a hardening accelerator, hardening can be accelerated | stimulated when hardening a resin composition.

Examples of the hardening accelerator of the component (F) include phosphorus-based hardening accelerators, amine-based hardening accelerators, imidazole-based hardening accelerators, guanidine-based hardening accelerators, and metal-based hardening accelerators. Agents, amine-based hardening accelerators, imidazole-based hardening accelerators, and metal-based hardening accelerators are preferred. Among these, from the viewpoint that the effects of the present invention can be significantly exhibited, an amine-based hardening accelerator, an imidazole-based hardening accelerator, and a metal-based hardening accelerator are preferable, and an imidazole-based hardening accelerator is particularly preferable. The hardening accelerators can be used singly or in combination of two or more kinds.

Examples of the phosphorus-based hardening accelerator include triphenylphosphine, a phosphonium borate compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, ( 4-methylphenyl) triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, and the like. Among them, triphenylphosphine and tetrabutylphosphonium decanoate are preferred.

Examples of the amine-based hardening accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6, -Ginseng (dimethylaminomethyl) phenol, 1,8-diazinebicyclo (5,4,0) -undecene and the like. Among them, 4-dimethylaminopyridine and 1,8-diazinebicyclo (5,4,0) -undecene are preferred.

Examples of the imidazole-based hardening accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methyl Imidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2- Methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyano Ethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazole trimellitate, 2,4-diamino-6- [2'-methylimidazole -(1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine , 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrole [1,2-a] benzimidazole, 1-dodecyl Alkyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidium Morpholine, 2-phenyl imidazole and imidazoline compounds and the adduct of an imidazole compound with an epoxy resin. Among them, 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferred.

Commercially available products can be used as the imidazole-based hardening accelerator, and examples thereof include "P200-H50" manufactured by Mitsubishi Chemical Corporation; "1B2PZ" manufactured by Shikoku Chemical Industry Co., Ltd., and the like.

Examples of the guanidine-based hardening accelerator include dicyandiamine, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, Dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazinebicyclo [4.4.0] dec-5-ene, 7-methyl- 1,5,7-triazinebicyclo [4.4.0] dec-5-ene, 1-methyl biguanide, 1-ethyl biguanide, 1-n-butyl biguanide, 1-n-octadecyl biguanide, 1,1-dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1-allyl biguanide, 1-phenyl biguanide, 1- (o-tolyl) biguanide and the like. Among them, dicyandiamine and 1,5,7-triazinebicyclo [4.4.0] dec-5-ene are preferred.

Examples of the metal-based hardening accelerator include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of the organometallic complex include organic cobalt complexes such as cobalt (II) ethionylpyruvate, cobalt (III) ethionate, and copper (II) ethionate. Organic copper complexes, organic zinc complexes such as zinc (II) acetonylpyruvate, organic iron complexes such as iron (III) acetonylpyruvate, nickel (II) acetonylpyruvate, etc. Organic nickel complexes, organic manganese complexes such as manganese (II) ethylacetonate and the like. Examples of the organic metal salt include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

When the resin composition contains (F) a hardening accelerator, the amount of the (F) hardening accelerator is from the viewpoint that the desired effect of the present invention can be significantly obtained, relative to 100 mass of the non-volatile component of the resin composition. %, Preferably 0.01% by mass or more, more preferably 0.03% by mass or more, particularly preferably 0.05% by mass or more, preferably 3% by mass or less, still more preferably 1.5% by mass or less, particularly preferably 1% by mass the following.

[8. (G) Thermoplastic Resin] 树脂 In addition to the above components, the resin composition system may include (G) a thermoplastic resin as an arbitrary component.

Examples of the thermoplastic resin of the (G) component include a phenoxy resin, a polyvinyl acetal resin, a polyolefin resin, a butadiene resin, a silicone resin, an alkylene resin, an alkylene oxide resin, Isoprene resin, isobutylene resin, carbonate resin, acrylic resin, polyimide resin, polyimide resin, polyimide resin, polyimide resin, polyether resin, polyphenylene ether resin , Polyetheretherketone resin, polyester resin.

Examples of the phenoxy resin include a bisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, a bisphenol acetophenone skeleton, a novolac skeleton, a biphenyl skeleton, a fluorene skeleton, and a dicyclopentadiene skeleton. Phenoxy resin with one or more skeletons selected from the group consisting of a norbornene skeleton, a naphthalene skeleton, an anthracene skeleton, an adamantane skeleton, a terpene skeleton, and a trimethylcyclohexane skeleton. The terminal system of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group.

Specific examples of the phenoxy resin include "1256" and "4250" (both are phenoxy resins containing a bisphenol A skeleton) manufactured by Mitsubishi Chemical Corporation; and "YX8100" (bisphenol manufactured by Mitsubishi Chemical Corporation) S skeleton contains phenoxy resin); "YX6954" (phenoxy resin containing bisphenol acetophenone skeleton) manufactured by Mitsubishi Chemical Corporation; "FX280" and "FX293" manufactured by Nippon Steel & Sumitomo Chemical Corporation; Mitsubishi Chemical Company-made "YX6954BH30", "YX6954BH30", "YX7553", "YX7553BH30", "YL7769BH30", "YL6794", "YL7213", "YL7290", "YL7891BH30", and "YL7482", etc.

(G) The weight average molecular weight Mw of the thermoplastic resin is preferably 8,000 or more, more preferably 10,000 or more, particularly preferably 20,000 or more, from the viewpoint that the desired effect of the present invention can be significantly obtained. 70,000 or less, more preferably 60,000 or less, and particularly preferably 50,000 or less. (G) The weight average molecular weight Mw of the thermoplastic resin is a number average molecular weight in terms of polystyrene measured using GPC.

When the resin composition contains a (G) thermoplastic resin, the amount of the (G) thermoplastic resin in the resin composition is, relative to the resin composition, from the viewpoint that the desired effect of the present invention can be significantly obtained. 100% by mass, preferably 0.01% by mass or more, more preferably 0.1% by mass or more, more preferably 0.3% by mass or more, more preferably 20% by mass or less, and still more preferably 10% by mass or less It is also preferably 5 mass% or less.

[9. (H) Flame retardant] 树脂 In addition to the components described above, the resin composition system may include (H) a flame retardant as an optional component.

Examples of the (H) flame retardant include an organic phosphorus-based flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a polysiloxane flame retardant, and a metal hydroxide. The flame retardants can be used alone or in combination of two or more.

Specific examples of the (H) flame retardant include "HCA-HQ" manufactured by Sankosha Co., Ltd., and "PX-200" manufactured by Daiba Chemical Industries. The flame retardant is preferably one which is difficult to hydrolyze. For example, 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene-10-peroxide is preferred. good.

When the resin composition contains a (H) flame retardant, the amount of the (H) flame retardant is preferably 0.01% by mass or more with respect to 100% by mass of the nonvolatile component in the resin composition, and more preferably 0.1% by mass % Or more, more preferably 0.3% by mass or more, more preferably 20% by mass or less, still more preferably 10% by mass or less, and still more preferably 5% by mass or less.

[10. (I) Arbitrary additives] 树脂 In addition to the components described above, the resin composition system may further contain additives as optional components. Examples of such additives include organic metal compounds such as organic copper compounds, organic zinc compounds, and organic cobalt compounds; resins such as binders, thickeners, defoamers, leveling agents, and adhesion-imparting agents. Additives, etc. These additives may be used singly or in combination of two or more kinds.

[11. Production method of resin composition] The resin composition system can be produced by a method of stirring and preparing ingredients using a stirring device such as a rotary mixer.

[12. Characteristics of resin composition] The resin composition described above can reduce the minimum melt viscosity. Therefore, the lamination | stacking property of the resin sheet using a resin composition can be made favorable. When the inorganic filler (B) is used, although the insulating property and sealing performance of the hardened material of the resin composition can be improved, the melt viscosity of the composition containing the inorganic filler (B) is generally higher, so The tendency to compromise lamination. On the other hand, the resin composition described above uses the (D) polymer resin to reduce melt viscosity while using the (B) inorganic filler, thereby achieving good lamination properties. The specific minimum melt viscosity of the resin composition is preferably 30,000 poise or less, more preferably 20,000 poise or less, and even more preferably 12000 poise or less. The lower limit of the minimum melt viscosity of the resin composition is not particularly limited, and can be, for example, 100 poise or more. The minimum melt viscosity of the resin composition can be measured by the method described in the examples.

With the resin composition described above, a cured product having a high glass transition temperature can be obtained. Therefore, since the heat resistance of the hardened | cured material of a resin composition can be made favorable, the insulation layer and sealing layer which are excellent in heat resistance can be obtained. For example, the resin composition is thermally cured according to the conditions described in the examples. The specific glass transition temperature of the obtained cured product is preferably 140 ° C or higher, more preferably 145 ° C or higher, and particularly preferably 150 ° C. the above. Although the upper limit of the glass transition temperature of the hardened | cured material of a resin composition is not specifically limited, It can set it as 300 degreeC or less, for example. The glass transition temperature of the hardened | cured material of a resin composition can be measured by the method as described in an Example.

According to the resin composition described above, the carbon black series functions as a colorant, and therefore, an appropriate color development can be obtained in accordance with the use of the carbon black. Generally, since carbon blacks function as black pigments, the color of the cured product of the resin composition can be made black or a color close to black. For example, when an insulating layer is formed from a cured product of a resin composition according to the method described in the examples, a black insulating layer can be obtained. Specifically, the insulating layer, L ^* a ^* b ^* color system of coordinates L ^*, and L ^* a ^* b as a white standard plate of an alumina white plate ^* color system of coordinates in L ^* The difference ΔL ^* is preferably -100 or more, more preferably -40 or less, still more preferably -50 or less, and particularly preferably -60 or less. Further, the insulating layer, L ^* a ^* b ^* color coordinates in the b ^*, and L ^* a ^* b as a white standard plate of an alumina white plate ^* color coordinate b ^* of the difference Δb ^{* It} is preferably -20 or more, and more preferably -15 or more, particularly preferably -10 or more, preferably 20 or less, still more preferably 15 or less, and particularly preferably 10 or less.

The above-mentioned resin composition can suppress the aggregation of carbon black. Conventionally, in a resin composition containing (B) an inorganic filler and (D) a polymer resin, carbon black is generally prone to agglomeration. Therefore, excellent characteristics such as color development, minimum melt viscosity, and glass transition temperature are desired. It is difficult to control both the agglomeration of carbon black and carbon black. On the other hand, with the resin composition described above, even when the (B) inorganic filler and (D) polymer resin are combined, the aggregation of (C) carbon black can be suppressed. Therefore, as described above, the characteristics such as color development, minimum melt viscosity, and glass transition temperature are balanced, and the occurrence of defects due to agglomeration of (C) carbon black can be suppressed. Specifically, in the case of forming the resin composition layer, it is possible to reduce the frequency of generation of aggregates of (C) carbon black having a maximum length exceeding 100 μm.

The hardened material of the above-mentioned resin composition generally has excellent insulating properties. The (B) inorganic filler can provide excellent insulation performance, and can suppress the aggregation of carbon black, so that the reduction in insulation caused by the aggregate of carbon black can be suppressed. In addition, since generation of agglomerates of carbon black can be suppressed, a resin composition can be used as a material for a thin insulating layer.

The hardened system of the above-mentioned resin composition generally has excellent sealing performance. The (B) inorganic filler provides excellent sealing performance, and also suppresses carbon black agglomeration, thereby suppressing the generation of cracks starting from the carbon black agglomerates, and suppressing the sealability due to cracks. The reduction.

[13. Application of resin composition] 密封 The above advantages are utilized, and a cured layer of the resin composition can be used to form a sealing layer and an insulating layer. Therefore, this resin composition can be used as a resin composition for semiconductor sealing or an insulating layer.

For example, the aforementioned resin composition system can be suitably used as a resin composition (resin composition for an insulating layer of a semiconductor chip package) for forming an insulating layer of a semiconductor chip package, and for forming a circuit board (including a printed wiring board). Resin composition of the insulating layer (resin composition for the insulating layer of the circuit board). Further, for example, the aforementioned resin composition system can be suitably used as a resin composition (an insulation layer for forming a conductor layer) for forming a conductor layer (including a redistribution layer) formed on the insulation layer and for forming the insulation layer. Forming resin composition).

Moreover, the said resin composition system is suitable as a resin composition (sealing resin composition for semiconductor wafers) for sealing a semiconductor wafer, for example.

Examples of the semiconductor wafer package which can be suitably used as a sealing layer or an insulating layer formed of a cured product of the resin composition include FC-CSP, MIS-BGA package, ETS-BGA package, and Fan-out WLP ( Wafer Level Package), Fan-in WLP, Fan-out PLP (Panel Level Package), Fan-in PLP.

The resin composition may be used as an underfill material, or may be a material such as MUF (Molding Under Filling) used after connecting a semiconductor wafer to a substrate.

Furthermore, the aforementioned resin composition can be used in a wide range of resin compositions such as resin flakes, prepregs, and other sheet-like laminates, solder resists, die-bonding materials, hole-filling resins, and component-embedding resins. in.

[14. Resin Sheet] The resin sheet of the present invention includes a support and a resin composition layer provided on the support. The resin composition layer is a layer containing the resin composition of the present invention, and is usually formed from a resin composition.

From the viewpoint of thinning, the thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, more preferably 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, or 40 μm or less. The lower limit of the thickness of the resin composition layer is not particularly limited, and can be, for example, 1 μm or more, 5 μm or more, 10 μm or more.

Examples of the support include a film made of a plastic material, a metal foil, and a release paper, and a film made of a plastic material and a metal foil are preferred.

When a film made of a plastic material is used as a support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes referred to as "PET"), polyethylene naphthalate Polyesters (hereinafter sometimes referred to as "PEN"), etc .; Polycarbonates (hereinafter sometimes referred to as "PC"); Polymethyl methacrylate (hereinafter sometimes referred to as "PMMA"), etc. Materials; cyclic polyolefins; triethylfluorenyl cellulose (hereinafter sometimes referred to as "TAC"); polyether sulfide (hereinafter sometimes referred to as "PES"); polyetherketone; polyfluorene. Among them, polyethylene terephthalate and polyethylene naphthalate are preferred, and convenience is particularly preferred with polyethylene terephthalate.

When a metal foil is used as a support, examples of the metal foil include copper foil and aluminum foil. Among them, copper foil is preferred. As the copper foil, a foil made of a simple metal of copper may be used, or a foil made of an alloy of copper and other metals (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used. .

The support system may apply a treatment such as a matting treatment, a corona discharge treatment, or a static electricity suppression treatment to the surface bonded to the resin composition layer.

Moreover, as a support system, the support body with a mold release layer which has a mold release layer on the surface joined to the resin composition layer can be used. Examples of the release agent that can be used in the release layer of a support with a release layer include a group consisting of an alkyd resin, a polyolefin resin, a urethane resin, and a silicone resin. One or more release agents selected from the list. Examples of commercially available release agents include "SK-1", "AL-5", and "AL-7" manufactured by LINTEC Corporation, which are alkyd resin-based release agents. Examples of the support with a release layer include "Lumirror T60" manufactured by Toray, "PUREX" manufactured by Teijin, and "Unipeel" manufactured by Unitika.

The thickness of the support is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. When a support with a release layer is used, the thickness of the entire support with a release layer is preferably set to the above range.

The resin sheet can be produced, for example, by dissolving a resin composition in an organic solvent to prepare a resin varnish, applying the resin varnish to a support using a coating device such as a die coater, and then This is dried to form a resin composition layer.

Examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone (MEK), and cyclohexanone; ethyl acetate, butyl acetate, cellosolve acetate, and propylene glycol monomethyl ether acetate And acetate solvents such as carbitol acetate; cellulosics and carbitol solvents such as butyl carbitol; aromatic hydrocarbon solvents such as toluene and xylene; dimethylformamide and dimethyl Amidamine-based solvents such as acetylacetamide (DMAc) and N-methylpyrrolidone. The organic solvents may be used singly or in combination of two or more kinds.

The drying system can be performed by a known method such as heating and blowing hot air. The content of the organic solvent in the dry resin composition layer is usually 10% by mass or less, and preferably it is 5% by mass or less. It depends on the boiling point of the organic solvent in the resin varnish. For example, if a resin varnish containing 30% to 60% by mass of organic solvent is used, it is dried at 50 ° C to 150 ° C for 3 minutes. For 10 minutes, a resin composition layer can be formed.

The resin sheet may include any layer other than the support and the resin composition layer as necessary. For example, a protective film may be provided on the surface of the resin sheet that is not in contact with the support of the resin composition layer (that is, the surface on the opposite side from the support). The thickness of the protective film is, for example, 1 μm to 40 μm. By the protective film, adhesion or scratches to the dust or the like on the surface of the resin composition layer can be suppressed. When the resin sheet has a protective film, the protective film is peeled off to become a usable resin sheet. The resin sheet can be rolled into a roll shape for storage.

The resin sheet is suitably used for forming an insulating layer (a resin sheet for an insulating layer of a semiconductor wafer package) at the time of manufacturing a semiconductor wafer package. For example, a resin sheet can be suitably used for forming an insulating layer of a circuit board (resin sheet for an insulating layer of a circuit board), and it can be more suitably used for forming an interlayer insulation over which a conductor layer is formed by plating. Layer (for an interlayer insulating layer of a circuit substrate in which a conductor layer is formed by plating). Examples of a package using such a substrate include an FC-CSP, a MIS-BGA package, and an ETS-BGA package.

The resin sheet can be suitably used for sealing a semiconductor wafer (resin sheet for sealing a semiconductor wafer) or forming a wiring on a semiconductor wafer (resin sheet for forming a semiconductor wafer wiring). Examples of applicable semiconductor wafer packages include Fan-out WLP (Wafer Level Package), Fan-in WLP, Fan-out PLP (Panel Level Package), Fan-in PLP, and the like.

The resin sheet is used as a MUF material used for connecting a semiconductor wafer to a substrate.

Furthermore, the resin sheet can be used in other wide applications requiring high insulation reliability. For example, the resin sheet is suitably used for forming an insulating layer of a circuit board such as a printed wiring board.

[15. Circuit board] 电路 The circuit board of the present invention includes an insulating layer formed of a cured product of the resin composition of the present invention. The circuit board can be manufactured by, for example, a manufacturing method including the following steps (1) and (2). (1) A step of forming a resin composition layer on a substrate. (2) A step of thermally curing the resin composition layer to form an insulating layer.

In step (1), a substrate is prepared. Examples of the substrate include glass epoxy substrates, metal substrates (stainless steel or cold rolled steel plate (SPCC), etc.), polyester substrates, polyimide substrates, BT resin substrates, and thermosetting polyphenylene ether substrates. Substrate. The base material may include a metal layer such as a copper foil on the surface as a part of the base material. For example, a substrate having a peelable first metal layer and a second metal layer on the surfaces of both surfaces can be used. When such a substrate is used, a conductor layer that is a wiring layer that can function as a circuit wiring is usually formed on a surface on the side opposite to the first metal layer of the second metal layer. Examples of the base material having such a metal layer include an ultra-thin copper foil "Micro Thin" with a supporting copper foil manufactured by Mitsui Metals Mining Corporation.

A conductive layer may be formed on the surface of one or both surfaces of the substrate. In the following description, a member including a base material and a conductor layer formed on the surface of the base material is sometimes referred to as a "base material with a wiring layer". Examples of the conductive material included in the conductive layer include a group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. A material selected from one or more metals. As the conductive material, a simple metal or an alloy may be used. Examples of the alloy include alloys of two or more kinds of metals selected from the above group (for example, nickel-chromium alloys, copper-nickel alloys, and copper-titanium alloys). Among these, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper as elemental metals are considered from the viewpoints of versatility, cost, and ease of patterning of conductor layers; and nickel · Chromium alloy, copper-nickel alloy, and copper-titanium alloy are preferred. Among them, elemental metals such as chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper; and nickel-chromium alloys are more preferred, and elemental metals such as copper are more preferred.

The conductor layer system may be patterned in order to function as a wiring layer, for example. At this time, the line width (circuit width) / interval (width between circuits) ratio of the conductor layer is not particularly limited, and is preferably 20/20 μm or less (that is, the pitch is 40 μm or less), and further preferably 10/10 μm or less. It is more preferably 5/5 μm or less, still more preferably 1/1 μm or less, and particularly preferably 0.5 / 0.5 μm or more. The pitch need not be the same throughout the entire conductor layer. The minimum pitch of the conductor layer can be set to, for example, 40 μm or less, 36 μm or less, or 30 μm or less.

The thickness of the conductor layer varies depending on the design of the circuit substrate, preferably 3 μm to 35 μm, more preferably 5 μm to 30 μm, more preferably 10 to 20 μm, and particularly preferably 15 to 20 μm. In addition, when the insulating layer is ground or ground to expose the conductor layer after the formation of the insulating layer, and the interlayer connection of the conductor layers is performed, the conductor layer performing the interlayer connection and the conductor layer not performing the interlayer connection are It is preferable that the thickness is different. The thickness of the thickest conductive layer (conductive pillar) among the conductive layers varies depending on the desired design of the wiring board, and is preferably 2 μm or more and 100 μm or less. The thickness of the conductive layer can be adjusted by repeating the aforementioned pattern. In addition, the conductor layers connected between the layers may be convex.

The conductor layer can be formed, for example, by a method including the steps of: laminating a dry film (photosensitive resist film) on a substrate; using a photomask and exposing and developing the dry film under specified conditions. A pattern to obtain a patterned dry film; a step of using the developed patterned dry film as a plating mask and forming a conductive layer by a plating method such as electrolytic plating; and a patterned dry film Steps of peeling. As the dry film system, a photosensitive dry film made of a photoresist composition can be used, and for example, a dry film formed of a resin such as a novolac resin, an acrylic resin, or the like can be used. The conditions for laminating the substrate and the dry film can be the same as the conditions for laminating the substrate and the resin sheet described later. The peeling of the dry film can be performed using an alkaline peeling solution such as a sodium hydroxide solution. If necessary, unnecessary wiring patterns can be removed by etching or the like.

After the substrate is prepared, a resin composition layer is formed on the substrate. When a conductor layer is formed on the surface of a base material, it is preferable to form a resin composition layer by embedding a conductor layer in a resin composition layer.

The formation of the resin composition layer is generally performed by laminating a resin sheet and a substrate. This lamination system can be performed by, for example, removing the protective film of the resin sheet, and then heating and pressing the resin sheet onto the substrate from the support side, thereby bonding the resin composition layer to the substrate. As a member which heat-presses a resin sheet on a base material (henceforth a "heat-pressing member"), the heated metal plate (SUS mirror plate etc.), a metal roller (SUS roller), etc. are mentioned, for example. However, instead of pressing the heating and pressing member directly on the resin sheet, it is better to press the resin sheet so that the resin sheet can sufficiently follow the surface unevenness of the substrate through an elastic material such as heat-resistant rubber. good.

The lamination system of the substrate and the resin sheet can be performed, for example, by a vacuum lamination method. In the vacuum layer method, the heating and pressing temperature is preferably in the range of 60 ° C to 160 ° C, and more preferably in the range of 80 ° C to 140 ° C. The heating and pressing pressure is preferably in the range of 0.098 MPa to 1.77 MPa, and more preferably in the range of 0.29 MPa to 1.47 MPa. The heating and pressing time is preferably in the range of 20 seconds to 400 seconds, and more preferably 30 seconds to 300 seconds. The lamination system is preferably implemented under a reduced pressure of 13 hPa or less.

After lamination, the laminated member can be smoothed by heating and pressing the member under normal pressure (atmospheric pressure), for example, from the support side. The pressing conditions for the smoothing treatment can be set to the same conditions as the heating and pressing conditions for the above-mentioned lamination. The lamination and smoothing process can be performed continuously using a vacuum laminator.

After the resin composition layer is formed on the substrate, the resin composition layer is thermally cured in step (2) to form an insulating layer. The thermosetting conditions of the resin composition layer will vary depending on the type of resin composition, etc., but the curing temperature is usually in the range of 120 ° C to 240 ° C (preferably in the range of 150 ° C to 220 ° C, and more preferably 170 ° C to 200 ° C), and the curing time is usually in the range of 5 minutes to 120 minutes (preferably 10 minutes to 100 minutes, and more preferably 15 minutes to 90 minutes).

Before the resin composition layer is thermally hardened, the resin composition layer may be heated at a temperature lower than the curing temperature to give a preheating treatment. For example, before the resin composition layer is thermally hardened, the resin composition may be generally formed at a temperature of 50 ° C to 120 ° C (preferably 60 ° C to 110 ° C, and preferably 70 ° C to 100 ° C). The pre-heating of the material layer is usually more than 5 minutes (preferably 5 minutes to 150 minutes, and more preferably 15 minutes to 120 minutes).

In this manner, a circuit board having an insulating layer can be manufactured. The method for manufacturing a circuit board may further include an arbitrary step. (2) The method for manufacturing a circuit board may include, for example, a step of peeling a support of a resin sheet. The support system may be peeled before the thermosetting of the resin composition layer, or may be peeled after the thermosetting of the resin composition layer.

The method for manufacturing a circuit board may include, for example, a step of polishing the surface of the insulating layer after forming the insulating layer. The polishing method is not particularly limited. The surface of the insulating layer can be ground, for example, using a flat grinding disk.

The manufacturing method of a circuit board may include the step (3) of interlayer connection of a conductor layer, for example. In this step (3), the conductor layer (for example, the conductor layer formed on the surface of the substrate) provided on one side of the insulating layer is usually conducted to the other side of the aforementioned conductor layer. This step (3) may include forming a via hole in the insulating layer, and then forming a conductor layer at an appropriate position on the insulating layer including the position where the via hole is formed to perform interlayer connection. Moreover, the step (3) may include grinding or grinding the insulating layer to expose the conductor layer formed on one side of the insulating layer and perform interlayer connection.

In the case of using a via for interlayer connection, for example, after forming a via with an insulating layer formed on a substrate with a wiring layer, a conductor layer is formed on the side opposite to the substrate of the insulating layer to perform interlayer. connection. Examples of the method of forming the through hole include laser irradiation, etching, and mechanical drilling. Among them, laser irradiation is preferred. This laser irradiation system can be performed using a suitable laser processing machine using an arbitrary light source such as a carbon dioxide gas laser, a YAG laser, an excimer laser, and the like. For example, the support side of the resin sheet is irradiated with laser light and penetrates the support and the insulating layer, thereby forming a through hole that exposes the conductor layer on the surface of the substrate.

The laser irradiation can be performed in accordance with appropriate procedures in accordance with the laser processing machine selected. The shape of the through hole is not particularly limited, but is generally circular or substantially circular. The shape of the through-hole refers to the shape of the outline of the opening when viewed in the extending direction of the through-hole.

After the formation of the through hole, it is preferred to perform a step of removing the slag in the through hole. This step is sometimes referred to as the sizing step. For example, if a conductive layer is formed on the insulating layer by a plating step, a wet-type slag removal treatment may be performed on the through hole. When a conductive layer is formed on the insulating layer by a sputtering step, a dry slag removal step such as a plasma treatment step may be performed. Furthermore, the insulation layer can be subjected to a roughening treatment by a step of removing slag.

In addition, before the conductor layer is formed on the insulating layer, the insulating layer may be roughened. According to this roughening treatment, the surface of the insulating layer including the through hole is generally roughened. As the roughening treatment system, arbitrary roughening treatments of a dry type and a wet type can be performed. Examples of the dry roughening treatment include plasma treatment and the like. Examples of the wet roughening treatment include a method of sequentially performing a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing solution.

The surface roughness Ra of the surface of the insulating layer after the roughening treatment is preferably 350 nm or more, more preferably 400 nm or more, more preferably 450 nm or more, preferably 700 nm or less, still more preferably 650 nm or less, and more preferably 600 nm. the following. The surface roughness Ra can be measured using a non-contact surface roughness meter.

After forming the via hole, a conductor layer is formed on the insulating layer. The conductive layer is formed at the position where the through-hole is formed, so that the newly formed conductive layer and the conductive layer on the surface of the substrate are conducted and connected between layers. Examples of the method for forming the conductive layer include a plating method, a sputtering method, and a vapor deposition method. Among them, a plating method is preferred. In a suitable embodiment, the surface of the insulating layer is plated by an appropriate method such as a semi-additive method or a full-additive method to form a conductive layer having a desired wiring pattern. When the support in the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by an erasing method. The material system of the formed conductor layer may be a simple metal or an alloy. The conductor layer system may have a single-layer structure or a multilayer structure including two or more different types of material layers.

Here, an example of an embodiment in which a conductor layer is formed on an insulating layer will be described in detail. A plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, a mask pattern that exposes a part of the plating seed layer is formed on the formed plating seed layer in accordance with a desired wiring pattern. On the exposed plating seed layer, an electrolytic plating layer is formed by electrolytic plating. At this time, at the same time as the formation of the electrolytic plating layer, the through holes are buried by electrolytic plating to form a filled hole. After the electrolytic plating layer is formed, the mask pattern is removed. Thereafter, an unnecessary plating seed layer is removed by a process such as etching to form a conductive layer having a desired wiring pattern. In the formation of the conductive layer, the dry film used in forming the mask pattern is the same as the dry film.

The conductive layer may include not only linear wiring but also electrode pads (land / pads) capable of mounting external terminals, for example. The conductor layer system may be composed of only an electrode pad.

In addition, the conductive layer is formed after the plating seed layer is formed, and the electrolytic plating layer and the hole are filled without using a mask pattern, and can be formed by patterning after etching.

When interlayer connection is performed by grinding or grinding of an insulating layer, for example, after grinding or grinding the insulating layer formed on a substrate with a wiring layer, the conductive layer formed on the substrate is ground. It is exposed on the side opposite to the base material of the insulating layer. As the method of polishing the insulating layer and the method of grinding, any method capable of exposing the conductive layer on the surface of the substrate can be used. Among them, it is preferable that a layer plane of the insulating layer is obtained by grinding or cutting to obtain a parallel ground surface or ground surface. Examples thereof include a chemical mechanical polishing method using a chemical mechanical polishing device, a mechanical polishing method such as polishing, and a planar grinding method using a grinding wheel. In addition, when the interlayer connection is performed by grinding or grinding of the insulating layer, it is the same as the case of using the through hole to perform the interlayer connection. The slag removal step, the roughening step, and A step of forming a conductor layer on the layer. Moreover, it is not necessary to expose all the conductor layers on the surface of the base material, and it is also possible to expose a part thereof.

The method for manufacturing a circuit substrate may include, for example, step (4) of removing a substrate. By removing the base material, a circuit board having an insulating layer and a conductor layer embedded in the insulating layer can be obtained. For example, when using a base material having a first metal layer and a second metal layer that can be peeled off, this step (4) can be performed. Hereinafter, suitable examples will be described. A conductor layer is formed on the surface of the second metal layer of the substrate having the first metal layer and the second metal layer. Further, a resin composition layer is formed on the second metal layer so that the conductor layer is embedded in the resin composition layer, and the resin composition layer is thermally cured to obtain an insulating layer. After that, after the interlayer connection is performed as necessary, a portion other than the second metal layer of the base material is peeled off. In addition, the second metal layer is etched and removed using an etchant such as a copper chloride aqueous solution. This makes it possible to remove the substrate. In this case, the base material may be removed in a state in which the protective layer is used to protect the conductor layer as needed.

In other embodiments, the circuit board may be manufactured using a prepreg. The prepreg system is one in which the resin composition is impregnated into the sheet-like fibrous base material by a method such as a hot melt method or a solvent method. Examples of the sheet-like fibrous substrate include glass cloth, aromatic polyamide nonwoven fabric, and liquid crystal polymer nonwoven fabric. From the viewpoint of thinning, the thickness of the sheet-like fiber substrate is preferably 900 μm or less, more preferably 800 μm or less, more preferably 700 μm or less, particularly preferably 600 μm or less, and further preferably 1 μm or more. 1.5 μm or more and 2 μm or more. The thickness of the prepreg can be set in the same range as the resin composition layer in the resin sheet described above. The method for manufacturing a circuit board using such a prepreg is basically the same as when a resin sheet is used.

[16. Semiconductor wafer package] 半导体 The semiconductor wafer package system according to the first embodiment of the present invention includes the circuit board described above and a semiconductor wafer mounted on the circuit board. The semiconductor wafer package system can be manufactured by bonding a semiconductor wafer to a circuit substrate.

The joining conditions of the circuit substrate and the semiconductor wafer are arbitrary conditions in which the terminal electrodes of the semiconductor wafer and the circuit wiring of the circuit substrate can be connected in a conductor. For example, the conditions used for flip-chip mounting of a semiconductor wafer can be used. In addition, for example, the semiconductor wafer and the circuit board may be bonded via an insulating adhesive.

An example of the bonding method is a method of pressing a semiconductor wafer onto a circuit board. As the pressing condition, the pressing temperature is usually in the range of 120 ° C to 240 ° C (preferably in the range of 130 ° C to 200 ° C, and more preferably in the range of 140 ° C to 180 ° C), and the pressing time is usually 1 A range of seconds to 60 seconds (preferably 5 seconds to 30 seconds).

In addition, as another example of the bonding method, a method in which a semiconductor wafer is re-soldered onto a circuit board and bonded is mentioned. The reflow conditions can be set in the range of 120 ° C to 300 ° C.

After the semiconductor wafer is bonded to the circuit substrate, the semiconductor wafer can be filled with a molded underfill. As the molding underfill, the above-mentioned resin composition may be used, and the above-mentioned resin sheet may also be used.

A semiconductor wafer package system according to a second embodiment of the present invention includes a semiconductor wafer and a cured product of the resin composition sealing the semiconductor wafer. In such a semiconductor chip package, a hardened body of a resin composition generally functions as a sealing layer. Examples of the semiconductor chip package according to the second embodiment include a Fan-out WLP.

FIG. 1 is a cross-sectional view schematically showing a Fan-out type WLP as an example of a semiconductor wafer package according to a second embodiment of the present invention. As the semiconductor wafer package 100 of the Fan-out WLP, as shown in FIG. 1, for example, the semiconductor wafer package 100 includes: a semiconductor wafer 110; a sealing layer 120 formed so as to cover the periphery of the semiconductor wafer 110; The sealing layer 120 is a surface on the opposite side, a redistribution layer 130 as an insulating layer, a redistribution layer 140 as a conductor layer, a solder resist layer 150, and a bump 160.

The manufacturing method of such a semiconductor chip package may include the following steps: (A) a step of laminating a temporary fixing film on a substrate, (B) a step of temporarily fixing a semiconductor wafer to the temporary fixing film, (C) A step of forming a sealing layer on a semiconductor wafer, (D) a step of peeling a base material and a temporary fixing film from the semiconductor wafer, and (E) forming a peeled surface of the base material of the semiconductor wafer and the temporary fixing film as insulation The step of forming a redistribution layer of a layer, (F) a step of forming a redistribution layer as a conductor layer on the redistribution forming layer, and (G) a step of forming a solder resist layer on the redistribution layer. In addition, the method for manufacturing a semiconductor chip package may include: (H) cutting a plurality of semiconductor chip packages into individual semiconductor chip packages to perform individual singulation. Hereinafter, this manufacturing method will be described in detail.

(Step (A)) Step (A) is a step of laminating a temporary fixing film on a substrate. The lamination conditions of the substrate and the temporary fixing film can be the same as the lamination conditions of the substrate and the resin sheet in the method for manufacturing a circuit board.

Examples of the substrate include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel plates (SPCC); epoxy resins such as FR-4 substrates, and glass fiber infiltration. A substrate made of a thermosetting treatment; a substrate made of bismaleimide imine triazine resin, such as BT resin.

The temporary fixing film can be any material that can be peeled from the semiconductor wafer and can temporarily fix the semiconductor wafer. Examples of commercially available products include "REVALPHA" manufactured by Nitto Denko Corporation.

(Step (B)) Step (B) is a step of temporarily fixing a semiconductor wafer to a temporary fixing film. The temporary fixing of the semiconductor wafer can be performed using a device such as a flip chip bonding machine, a die bonding machine, or the like. The layout and number of semiconductor wafers can be appropriately set according to the shape and size of the film, the number of semiconductor packages to be produced, and the like. For example, the semiconductor wafers may be arranged in a matrix of a plurality of rows and a plurality of columns and temporarily fixed.

(Step (C)) Step (C) is a step of forming a sealing layer on a semiconductor wafer. The sealing layer is formed by the hardened | cured material of the said resin composition. The sealing layer is generally formed by a method including a step of forming a resin composition layer on a semiconductor wafer and a step of thermally curing the resin composition layer to form a sealing layer.

Forming a resin composition layer on a semiconductor wafer is usually performed using the above-mentioned resin sheet. Specifically, a resin composition layer of a resin sheet and a semiconductor wafer are laminated to form a resin composition layer on the semiconductor wafer. The above-mentioned resin composition generally has a low minimum melt viscosity, so that the semiconductor wafer can be well sealed by the aforementioned lamination.

The lamination system of the semiconductor wafer and the resin sheet can be performed, for example, by removing the protective film of the resin sheet, heating and pressing the resin sheet onto the semiconductor wafer from the support side, and attaching the resin composition layer. On a semiconductor wafer. As a heat-pressing member which heat-presses a resin sheet on a semiconductor wafer, a heated metal plate (SUS mirror plate etc.), a metal roller (SUS roll), etc. are mentioned, for example. It is not preferable to press the heating and pressing member directly on the resin sheet, but to press the resin sheet so that the resin sheet can sufficiently follow the unevenness of the surface of the semiconductor wafer through an elastic material such as heat-resistant rubber.

In addition, the lamination system of the semiconductor wafer and the resin sheet can be implemented by vacuum lamination after removing the protective film of the resin sheet, for example. The lamination conditions in the vacuum lamination method can be set to be the same as the lamination conditions of the substrate and the resin sheet in the method for manufacturing a circuit board.

The support system of the resin sheet may be peeled off before the resin sheet is laminated on the semiconductor wafer, or may be peeled off after the semiconductor wafer and the resin sheet are laminated and the resin composition layer is thermally cured. After the wafer and the resin sheet are thermally cured, the resin composition layer is peeled.

The formation of a resin composition layer on a semiconductor wafer can be performed using the above-mentioned resin composition. Specifically, it can be performed by applying a resin composition to a semiconductor wafer. The coating conditions as the resin composition can be set to be the same as the coating conditions when the resin composition layer is formed in the method for manufacturing a resin sheet.

After the resin composition layer is formed on the semiconductor wafer, the resin composition layer is thermally cured to obtain a sealing layer covering the semiconductor wafer. This makes it possible to seal the semiconductor wafer with the cured product of the resin composition. The thermosetting conditions of the resin composition layer can be the same conditions as the thermosetting conditions of the resin composition layer in the method of manufacturing a circuit board. Further, before the resin composition layer is thermally hardened, the resin composition layer may be heated at a temperature lower than the curing temperature to give a preheating treatment. The processing conditions of this preheating process can be the same conditions as the preheating process in the manufacturing method of a circuit board.

(Step (D)) Step (D) is a step of peeling the substrate and the temporary fixing film from the semiconductor wafer. The peeling method is preferably a method suitable for the material of the temporary fixing film. As a peeling method, the method of peeling by heating, foaming, or expanding a temporary fixing film is mentioned, for example. In addition, examples of the peeling method include a method in which the temporary fixing film is irradiated with ultraviolet rays through a base material, and the adhesive strength of the temporary fixing film is reduced to perform peeling.

In the method of peeling the temporarily fixed film by heating, foaming, or expanding, the heating conditions are usually performed at 100 ° C to 250 ° C for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method for detaching the temporarily fixed film by irradiating ultraviolet rays to perform peeling, the irradiation amount of ultraviolet rays is usually 10 mJ / cm ² to 1000 mJ / cm ² .

(Step (E)) (1) Step (E) is a step of forming a rewiring forming layer as an insulating layer on the peeled side of the substrate of the semiconductor wafer and the temporary fixing film.

As the material of the rewiring formation layer, any material having insulation properties when the rewiring formation layer is formed can be used. Among these, from the viewpoint of ease of manufacturing a semiconductor wafer package, a photosensitive resin and a thermosetting resin are preferred. As the thermosetting resin, the resin composition of the present invention can be used.

After the rewiring formation layer is formed, a via hole may be formed in the rewiring formation layer in order to connect the semiconductor wafer and the rewiring layer between layers.

In the method of forming a through hole when the material of the rewiring formation layer is a photosensitive resin, the surface of the rewiring formation layer is usually irradiated with active energy rays through a mask pattern to rewiring the irradiated portion. The formed layer is light cured. Examples of the active energy rays include ultraviolet rays, visible rays, electron rays, and X-rays. Particularly, ultraviolet rays are preferred. The amount of ultraviolet radiation and the irradiation time can be appropriately set in accordance with the photosensitive resin. Examples of the exposure method include a contact exposure method in which a mask pattern is closely adhered to the redistribution layer to perform exposure, and a mask pattern is not adhered to the redistribution layer to perform exposure using parallel light. Non-contact exposure method.

After the rewiring formation layer is photo-cured, the rewiring formation layer is developed and unexposed portions are removed to form a through hole. The development system can perform either wet development or dry development. Examples of the development method include a dipping method, a kneading method, a spray method, a brushing method, and a shaking dipping method, and the kneading method is suitable from the standpoint of resolution.

Examples of a method for forming a through hole when the material of the rewiring forming layer is a thermosetting resin include laser irradiation, etching, mechanical drilling, and the like. Among them, laser irradiation is preferred. The laser irradiation system can be performed using a suitable laser processing machine using a light source such as a carbon dioxide gas laser, a UV-YAG laser, and an excimer laser.

The shape of the through hole is not particularly limited, but is generally considered to be circular or substantially circular. The diameter of the top port of the through hole is preferably 50 μm or less, more preferably 30 μm or less, more preferably 20 μm or less, more preferably 3 μm or more, more preferably 10 μm or more, and still more preferably 15 μm or more. Here, the so-called top port diameter of the through hole refers to the diameter of the opening of the through hole on the surface of the redistribution forming layer.

(Step (F)) Step (F) is a step of forming a redistribution layer as a conductor layer on the redistribution forming layer. The method for forming the redistribution layer on the redistribution forming layer can be the same as the method for forming the conductor layer on the insulating layer in the method for manufacturing a circuit board. Further, steps (E) and (F) are repeated, and a redistribution layer and a redistribution forming layer (additional layer) may be alternately deposited.

(Step (G)) Step (G) is a step of forming a solder resist layer on the redistribution layer. As the material of the solder resist layer, any material having insulation properties when the solder resist layer is formed can be used. Among these, a photosensitive resin and a thermosetting resin are preferred from the viewpoint of ease of manufacturing a semiconductor wafer package. As the thermosetting resin, the resin composition of the present invention can be used.

In step (G), bump processing for forming bumps may be performed as needed. The bump processing can be performed by a method such as solder balls or solder plating. The formation of the through holes in the bump processing can be performed in the same manner as in step (E).

(Step (H)) The manufacturing method of a semiconductor wafer package may include step (H) in addition to steps (A) to (G). Step (H) is a step of cutting a plurality of semiconductor wafer packages into individual semiconductor wafer packages to perform individual singulation. The method for cutting a semiconductor wafer package into individual semiconductor wafer packages is not particularly limited.

In a semiconductor wafer package according to a third embodiment of the present invention, for example, in the semiconductor wafer package 100 shown in FIG. 1, a hardened product of the resin composition of the present invention is used to form a rewiring forming layer 130 or a resistor. The semiconductor chip package of the solder layer 150.

[17. Semiconductor device] As a semiconductor device on which the above-mentioned semiconductor chip package is mounted, there can be provided, for example, an electronic product (for example, a computer, a mobile phone, a smartphone, a tablet device, a wearable device, a digital camera, a medical device, etc.). Devices, televisions, etc.) and vehicles (such as motorcycles, automobiles, trams, ships, and airplanes). [Example]

Hereinafter, the present invention will be specifically described by showing examples. However, the present invention is not limited to the following examples. In the following descriptions, "parts" and "%" of quantities are indicated. Unless otherwise specified, they mean "mass parts" and "mass%", respectively. In addition, the operations described below are performed under an environment of normal temperature and pressure unless otherwise specified.

[Synthesis Example 1] 69 g of a bifunctional hydroxyl-terminated polybutadiene ("G-3000" manufactured by Soda Corporation, number average molecular weight = 3000, hydroxyl equivalent = 1800 g / eq.) Was placed in a reaction container, and aromatic 40 g of a hydrocarbon-based mixed solvent ("Ipsol 150" manufactured by Idemitsu Petrochemical Co., Ltd.) and 0.005 g of dibutyltin dilaurate were mixed and uniformly dissolved. When it was in a uniform state, the temperature was raised to 50 ° C, and 8 g of isophorone diisocyanate ("IPDI" manufactured by Evonik Degussa Japan, isocyanate group equivalent = 113 g / eq.) Was added while stirring, and the reaction was performed for about 3 hours.

Next, the obtained reactant was cooled to room temperature. To the cooled reaction product, 23 g of cresol novolac resin ("KA-1160" manufactured by ethyl diglycol acetate / DIC Corporation, hydroxyl equivalent weight = 117 g / eq.), And ethyl diglycol acetate (manufactured by DAICEL Corporation) were added. ) 60 g, the temperature was raised to 80 ° C. with stirring, and the reaction was performed for about 4 hours. The disappearance of the NCO peak at 2250 cm ^-1 was confirmed by FT-IR. When the NCO peak disappeared, it was regarded as the end point of the reaction, and the reaction was cooled to room temperature. The reactant was filtered with a 100-mesh filter cloth to obtain an elastomer A having a butadiene structure and a phenolic hydroxyl group (butadiene resin containing a phenolic hydroxyl group: 50% by mass of nonvolatile content). The number average molecular weight of the elastomer A was 5,500, and the glass transition temperature was -5 ° C.

[Synthesis Example 2] 368 A flask equipped with a stirring device, a thermometer, and a condenser was charged with 368.41 g of ethyl diethylene glycol acetate as a solvent and 368.41 g of an aromatic solvent ("Solvesso150" manufactured by Exxon Mobil). . Furthermore, 100.1 g (0.4 mol) of diphenylmethane diisocyanate and polycarbonate diol ("C-2015N" manufactured by Kuraray, Inc.) were charged into the flask, and the number average molecular weight was about 2000, and the hydroxyl equivalent weight was 1000 g / eq., non-volatile content: 100%) 400 g (0.2 mol), and the reaction was performed at 70 ° C. for 4 hours.

Next, 195.9 g (0.2 mol) of nonylphenol novolak resin (hydroxyl equivalent weight = 229.4 g / eq, average 4.27 function, average calculated molecular weight 979.5 g / mol) were charged into the flask. 41.0 g (0.1 mol) of alcoholic dibasic trimellitate was heated to 150 ° C. over 2 hours and allowed to react for 12 hours. The disappearance of the NCO peak at 2250 cm ^-1 was confirmed by FT-IR. When the NCO peak disappeared, it was regarded as the end point of the reaction, and the reaction was cooled to room temperature. In addition, by filtering with a 100-mesh filter cloth, an elastomer B (non-volatile content 50% by mass) having a carbonate structure was obtained. The number average molecular weight of the elastomer B was 6,100, and the glass transition temperature was 5 ° C.

[Example 1] A liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., a 1: 1 mixture of a bisphenol A type epoxy resin and a bisphenol F type epoxy resin was prepared at 25 ° C ( Mass ratio), epoxy equivalent: 169g / eq.) 25 parts, glycidylamine epoxy resin ("ELM-100" manufactured by Sumitomo Chemical Co., Ltd., epoxy equivalent 107g / eq.) 5 parts, biphenyl epoxy 20 parts of resin ("NC3000L" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 269 g / eq.), 3 parts of amphipathic polyether block copolymer ("Fortegra 100" manufactured by Dow Chemical Co., number average molecular weight 6700), 380 parts of spherical silica (average particle size 0.5 μm, "SO-C2" manufactured by Admatechs), surface-treated with a phenylaminosilane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.), active ester compound ( `` HPC-8000-65T '' manufactured by DIC, 65% by weight toluene solution of non-volatile content of about 223 g / eq. Of active group) 7.7 parts, phenol novolac hardener containing triazine skeleton ("LA" manufactured by DIC -7054 ", hydroxyl equivalent of about 125 g / eq., 8.3 parts of MEK solution with 60% non-volatile content, phenoxy resin (" YX7553BH30 "manufactured by Mitsubishi Chemical Corporation, 16.6 parts of cyclohexanone: methyl ethyl ketone (MEK) in a 1: 1 content of 30% by mass, a flame retardant ("HCA-HQ" manufactured by Sanko Corporation, 10- (2,5-dihydroxyphenyl) ) -10-Hydrogen-9-oxa-10-phosphaphenanthrene-10-peroxide, average particle size 2 μm), carbon black A (DBP absorption 120cm ^{3 /} 100g, pH = 6.5, average particle size) 20nm) 1.5 parts, 0.3 parts of hardening accelerator ("1B2PZ", 1-benzyl-2-phenylimidazole manufactured by Shikoku Chemical Industry Co., Ltd.), 25 parts of methyl ethyl ketone, and 25 parts of cyclohexanone are mixed, A high-speed rotating mixer was used to uniformly disperse the mixture to obtain a mixture. This mixture was filtered with a filter cartridge ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish 1.

The amphiphilic polyether block copolymer ("Fortegra 100" manufactured by Dow Chemical Co.) is a resin that is liquid at room temperature of about 25 ° C, and therefore has a glass transition temperature of 30 ° C or lower.

[Example 2] The amount of carbon black A was changed from 1.5 parts to 1.0 part. Except for the above matters, the same operation as in Example 1 was performed to prepare a resin varnish 2.

[Example 3] A liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., a 1: 1 mixture of a bisphenol A type epoxy resin and a bisphenol F type epoxy resin was prepared at 25 ° C ( Mass ratio), epoxy equivalent: 169g / eq) 10 parts, glycidylamine type epoxy resin ("ELM-100" manufactured by Sumitomo Chemical Co., Ltd., epoxy equivalent 107g / eq.) 5 parts, naphthalene type epoxy resin ( 7 parts of "HP4032SS" manufactured by DIC, epoxy equivalent 151 g / eq.), 16 parts of elastomer A (non-volatile content 50% by mass) prepared in Synthesis Example 1, and phenylaminosilane-based coupling agent (Shin-Etsu Chemical Co., Ltd. 310 parts of spherical silica (average particle size 0.5 μm, "SO-C2" manufactured by Admatechs), surface-treated spherical silicon dioxide, active ester compound ("HPC-8000-65T" manufactured by DIC, Base equivalent of about 223 g / eq., Non-volatile content 65% by mass of toluene solution) 7.7 parts, phenol novolac hardener containing triazine skeleton ("LA-7054" manufactured by DIC, hydroxyl equivalent of about 125 g / eq., No 25 parts of MEK solution with 60% volatile content), 4 parts of carbon black A (DBP absorption 120cm ^{3 /} 100g, pH = 6.5, average particle size 20nm), hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd.) "1B2PZ", 0.5 part of 1-benzyl-2-phenylimidazole) and 20 parts of methyl ethyl ketone were mixed, and they were uniformly dispersed using a high-speed rotary mixer to obtain a mixture. This mixture was filtered through a filter cartridge ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish 3.

[Example 4] The amount of carbon black A was changed from 4 parts to 2 parts. The amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Except for the above matters, the same operation as in Example 3 was performed to prepare a resin varnish 4.

[Example 5] Carbon black B (DBP absorption amount 70cm ³ /100g,pH=3.5, average particle diameter 20nm) 4 parts Carbon black A 1.5 parts instead. Except for the above matters, the same operation as in Example 1 was performed to prepare a resin varnish 5.

[Example 6] carbon black B (DBP absorption amount 70cm ³ /100g,pH=3.5, average particle diameter 20nm) 2.5 parts A 4 parts of carbon black instead. The amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Except for the above matters, the same operation as in Example 3 was performed to prepare the resin varnish 6.

[Example 7] 份 Instead of 16 parts of elastomer A (non-volatile matter 50% by mass) prepared in Synthesis Example 1, 16 parts of elastomer B (non-volatile matter 50% by mass) prepared in Synthesis Example 2 was used. The amount of carbon black A was changed from 4 to 2 parts. Furthermore, the amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Except for the above matters, the same operation as in Example 3 was performed to prepare a resin varnish 7.

[Example 8] The amount of liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) was changed from 25 parts to 22 parts. And, (DBP absorption amount 70cm ³ /100g,pH=3.5, average particle diameter 20nm) 4 parts Carbon black A 1.5 parts in place of carbon black B. Furthermore, as a material of the resin varnish, 3 parts of rubber elastic epoxy resin ("YX7400" made by Mitsubishi Chemical Corporation, epoxy equivalent 410g / eq.) Can be further added. Except for the above matters, the same operation as in Example 1 was performed to prepare a resin varnish 8.

[Comparative Example 1] An active ester compound ("HPC-8000-65T" manufactured by DIC Corporation) was not used. In addition, the amount of a phenol novolak-based hardener ("LA-7054" manufactured by DIC Corporation, non-volatile content 60%) containing a triazine skeleton was changed from 8.3 parts to 16.6 parts. Further, carbon black C (DBP absorption ^{140cm 3 / 100g, pH = 8} , average particle diameter 20nm) 1.5 parts Carbon black A 1.5 parts instead. Except for the above matters, the same operation as in Example 1 was performed to prepare a resin varnish 9.

[Comparative Example 2] An active ester compound ("HPC-8000-65T" manufactured by DIC Corporation) was not used. In addition, the amount of a phenol novolac-based hardener ("LA-7054" manufactured by DIC Corporation, non-volatile content 60%) containing a triazine skeleton was changed from 25 parts to 33.3 parts. Further, carbon black C (DBP absorption ^{140cm 3 / 100g, pH = 8} , average particle diameter 20nm) 4 parts A 4 parts of carbon black instead. The amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Except for the above matters, the same operation as in Example 3 was performed to prepare the resin varnish 10.

[Comparative Example 3] An active ester compound ("HPC-8000-65T" manufactured by DIC Corporation) was not used. A phenol novolac-based hardener containing a triazine skeleton ("LA-7054" manufactured by DIC Corporation) and a nonvolatile content of 60 were used. %) Changed from 8.3 parts to 16.6 parts. Further, carbon black C (DBP absorption ^{140cm 3 / 100g, pH = 8} , average particle diameter 20nm) 0.6 parts Carbon black A 1.5 parts instead. The amount of the hardening accelerator ("1B2PZ" manufactured by Shikoku Chemical Industry Co., Ltd.) was changed from 0.3 to 0.7. Except for the above matters, the same operation as in Example 1 was performed to prepare the resin varnish 11.

[Comparative Example 4] An active ester compound ("HPC-8000-65T" manufactured by DIC Corporation) was not used. In addition, the amount of a phenol novolac-based hardener ("LA-7054" manufactured by DIC Corporation, non-volatile content 60%) containing a triazine skeleton was changed from 25 parts to 33.3 parts. Further, carbon black C (DBP absorption ^{140cm 3 / 100g, pH = 8} , average particle diameter 20nm) 1.3 parts A 4 parts of carbon black instead. The amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Except for the above matters, the same operation as in Example 3 was performed to prepare the resin varnish 12.

[Comparative Example 5] Carbon black C (DBP absorption ^{140cm 3 / 100g, pH = 8} , average particle diameter 20nm) 1.5 parts Carbon black A 1.5 parts instead. Except for the above matters, the same operation as in Example 1 was performed to prepare the resin varnish 13.

[Evaluation of Carbon Black Defects of the Resin Composition Layer] A polyethylene terephthalate film ("PET501010", manufactured by LINTEC Corporation, thickness: 50 µm) having a surface subjected to a release treatment was prepared as a support. The resin varnishes prepared in the examples and comparative examples were uniformly applied to the release surface of the support so that the thickness of the dried resin composition layer became 50 μm, and the temperature was 80 ° C. to 120 ° C. (average 100). ℃) and dried for 5 minutes to obtain a resin sheet having a width of 30 cm and a length of 30 cm.

Using a digital microscope ("VH-Z20R" manufactured by Keyence) while irradiating light, the resin sheet was observed from the support side, and the presence or absence of agglomerates of carbon black was investigated. If there is an aggregate with a maximum aggregate length exceeding 100 μm, it is judged to be “bad”, and if it is not, it is judged to be “good”.

[Measurement of ΔL * and Δb * of the insulating layer] A polyethylene terephthalate film ("PET501010", manufactured by LINTEC Corporation, thickness: 50 µm) having a surface subjected to a mold release preparation was prepared as a support. The resin varnishes prepared in Examples and Comparative Examples were uniformly applied to the release surface of the support so that the thickness of the dried resin composition layer became 100 μm, and the temperature was 80 ° C. to 120 ° C. (average 100 ° C) for 5 minutes to obtain a resin sheet.

Using a batch-type vacuum pressure laminating machine ("MVLP-500" manufactured by Meiji Co., Ltd.), the resin sheet and the copper-clad laminate were connected so that the resin composition layer of the resin sheet and the both sides of the copper-clad laminate were in contact. Plywood is laminated. The lamination system was carried out under reduced pressure for 30 seconds, and the pressure was set to 13 hPa or less. Thereafter, the lamination was performed by pressing at 30 ° C, 100 ° C, and a pressure of 0.74 MPa. After lamination, the support is removed. Thereafter, the resin composition layer is hardened by heating at a hardening condition of 100 ° C. and 30 minutes, and then at 180 ° C. and 30 minutes to form an insulating layer.

The color difference meter (KONICA MINOLTA JAPAN, "CR-10" manufactured by the company) was used to measure the L ^* a ^* b ^* coordinate of the color system L ^* and b ^* and the L ^* a ^{* of the} white standard plate b ^* color system of coordinates and the difference between ^{L *} ΔL ^* and Δb between the ^{b * *.} As the white standard plate, a white plate made of alumina was used.

[Measurement of Glass Transition Temperature of Hardened Material of Resin Composition] A polyethylene terephthalate film ("PET501010", manufactured by LINTEC Corporation, thickness: 50 μm) having a surface subjected to a mold release preparation was prepared as a support. The resin varnishes prepared in Examples and Comparative Examples were uniformly applied to the release surface of the support so that the thickness of the dried resin composition layer became 100 μm, and the temperature was 80 ° C. to 120 ° C. (average 100). ° C) for 5 minutes to obtain a resin sheet.

The resin sheet was heated in a baking box at 180 ° C. for 90 minutes to thermally harden the resin composition layer, thereby obtaining a cured product layer of the resin composition. The support was peeled from the hardened layer, and the hardened layer was cut to obtain a test piece having a width of about 5 mm and a length of about 15 mm. For this test piece, a thermomechanical analysis device ("Thermo Plus TMA8310" manufactured by Rigaku Corporation) was used to perform thermomechanical analysis by a tensile load method. Specifically, the test piece was mounted on the thermo-mechanical analysis device, and the measurement was performed twice continuously under the measurement conditions of a load of 1 g and a temperature increase rate of 5 ° C./min. In the second measurement, the glass transition temperature Tg (° C) was calculated.

[Measurement of Minimum Melt Viscosity of Resin Composition] 苯二甲酸 A polyethylene terephthalate film ("PET501010", manufactured by LINTEC Corporation, thickness: 50 µm) having a surface subjected to a release treatment was prepared as a support. The resin varnishes prepared in Examples and Comparative Examples were uniformly applied to the release surface of the support so that the thickness of the dried resin composition layer became 100 μm, and the temperature was 80 ° C. to 120 ° C. (average 100). ° C) for 5 minutes to obtain a resin sheet.

After the support was peeled off, the resin composition layer was compressed by a mold to produce particles for measurement (18 mm in diameter, 1.2 g to 1.3 g). Then, the measurement particle was measured for the minimum melt viscosity using a dynamic viscoelasticity measuring device ("Rheosol-G3000" manufactured by UBM). Specifically, the minimum melt viscosity was calculated by measuring the dynamic viscoelasticity of 1 g of particles for measurement using a parallel plate with a diameter of 18 mm in a temperature range from a starting temperature of 60 ° C. to 200 ° C. The measurement conditions were a temperature increase rate of 5 ° C / min, a measurement temperature interval of 2.5 ° C, a vibration frequency of 1 Hz, and a strain of 1 deg.

[Results] (1) The results of the above examples and comparative examples are shown in the following table. In the following table, the amount of each component represents a mass part of a non-volatile component. In the following tables, the abbreviations have the following meanings. CB-A: carbon black A. CB-B: carbon black B. CB-C: carbon black C. CB disadvantages: carbon black disadvantages.

[Review] As can be seen in Tables 1 and 2, as compared with the comparative example using carbon black other than (C) carbon black, the example using (C) carbon black with a DBP absorption in a specified range is acceptable. The same or better color development, the lowest melt viscosity, and the glass transition temperature are obtained, and the occurrence of defects due to the aggregation of carbon black can be suppressed. From this result, it was confirmed that the resin composition which can balance the characteristics of color development, minimum melt viscosity, and glass transition temperature, and can suppress the agglomeration of carbon black can be achieved by this invention.

In addition, the inventors repeated the experiments of Examples 1 to 8 described above until the carbon black agglomerates were generated. As a result, compared with Examples 1 to 4 and 7 using carbon black A, the number of experiments performed on the generation of aggregates up to carbon black in Examples 5, 6 and 8 using carbon black B was larger. This result indicates that, compared with the case where carbon black A is used, the case where carbon black B is used effectively suppresses the aggregation of carbon black, and the frequency of generation of agglomerates is further reduced.

100‧‧‧ semiconductor chip package

110‧‧‧Semiconductor wafer

120‧‧‧Sealing layer

130‧‧‧ redistribution layer

140‧‧‧ redistribution layer

150‧‧‧solder resist layer

160‧‧‧ bump

[FIG. 1] FIG. 1 is a sectional view schematically showing a Fan-out type WLP as an example of a semiconductor chip package according to a second embodiment of the present invention.

Claims (17)

A resin composition which comprises a system wherein: (A) an epoxy resin, (B) inorganic filler, (C) DBP absorption amount of carbon black and (D) a glass transition temperature of 130cm ³ / 100g or less below 30 ℃ Polymer resin. The resin composition according to claim 1, wherein the amount of the component (B) is 30% by mass or more and 95% by mass or less with respect to 100% by mass of the nonvolatile component in the resin composition. The resin composition according to claim 1, wherein the amount of the component (B) is 75% by mass or more and 95% by mass or less with respect to 100% by mass of the nonvolatile component in the resin composition. The resin composition according to claim 1, wherein the component (A) contains (A-1) an epoxy resin containing nitrogen or an epoxy resin having a condensed ring structure. The resin composition according to claim 1, wherein the component (D) has a polybutadiene structure, a polysiloxane structure, a polyalkylene structure, a polyalkylene oxide structure, and polyisoprene in the molecule. One or more structures selected from the group consisting of ene structures, polyisobutylene structures, polycarbonate structures, and polyacrylic structures. The resin composition according to claim 1, wherein the component (D) has a functional group capable of reacting with the component (A). The resin composition according to claim 1, wherein the component (D) has one or more selected from the group consisting of a hydroxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group and a urethane group. Functional group. The resin composition according to claim 1, wherein the number average molecular weight of the component (D) is 4,000 or more and 100,000 or less. The resin composition according to claim 1, wherein the amount of the component (D) is 0.2% by mass or more and 20% by mass or less with respect to 100% by mass of the nonvolatile component in the resin composition. The resin composition according to claim 1, wherein the amount of the component (C) is 0.1% by mass or more and 3% by mass or less with respect to 100% by mass of the nonvolatile component in the resin composition. The resin composition according to claim 1, which is a resin composition for an insulating layer of a semiconductor wafer package. The resin composition according to claim 1, which is a resin composition for semiconductor sealing. A resin sheet comprising: a support body and a resin composition layer provided on the support body, and the resin composition layer comprising the resin composition of any one of claims 1 to 12. The resin sheet according to claim 13 is a resin sheet for an insulating layer of a semiconductor wafer package. A circuit board including an insulating layer, characterized in that the insulating layer is formed of a cured product of the resin composition according to any one of claims 1 to 12. A semiconductor chip package comprising: (i) a circuit substrate of claim 15; and (ii) a semiconductor wafer mounted on the circuit substrate. A semiconductor wafer package comprising: (i) a semiconductor wafer and (ii) a cured product of a resin composition according to any one of claims 1 to 12 for sealing the aforementioned semiconductor wafer.